National Library of Energy BETA

Sample records for gan films grown

  1. Highly c-axis oriented GaN films grown on free-standing diamond substrates for high-power devices

    SciTech Connect (OSTI)

    Zhang, D. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); Bian, J.M., E-mail: jmbian@dlut.edu.cn [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Qin, F.W.; Wang, J.; Pan, L. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); Zhao, J.M. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)] [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Zhao, Y.; Bai, Y.Z. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); Du, G.T. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)] [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)

    2011-10-15

    Highlights: {yields} GaN films are deposited on diamond substrates by ECR-PEMOCVD. {yields} Influence of deposition temperature on the properties of samples is investigated. {yields} Properties of GaN films are dependent on the deposition temperature. -- Abstract: GaN films with highly c-axis preferred orientation are deposited on free-standing thick diamond films by low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa and N{sub 2} are applied as precursors of Ga and N, respectively. The quality of as-grown GaN films are systematically investigated as a function of deposition temperature by means of X-ray diffraction (XRD) analysis, Hall Effect measurement (HL), room temperature photoluminescence (PL) and atomic force microscopy (AFM). The results show that the dense and uniformed GaN films with highly c-axis preferred orientation are successfully achieved on free-standing diamond substrates under optimized deposition temperature of 400 {sup o}C, and the room temperature PL spectra of the optimized GaN film show a intense ultraviolet near band edge emission and a weak yellow luminescence. The obtained GaN/diamond structure has great potential for the development of high-power semiconductor devices due to its excellent heat dissipation nature.

  2. Effects of substrate temperature, substrate orientation, and energetic atomic collisions on the structure of GaN films grown by reactive sputtering

    SciTech Connect (OSTI)

    Schiaber, Ziani S.; Lisboa-Filho, Paulo N.; Silva, José H. D. da; Leite, Douglas M. G.; Bortoleto, José R. R.

    2013-11-14

    The combined effects of substrate temperature, substrate orientation, and energetic particle impingement on the structure of GaN films grown by reactive radio-frequency magnetron sputtering are investigated. Monte-Carlo based simulations are employed to analyze the energies of the species generated in the plasma and colliding with the growing surface. Polycrystalline films grown at temperatures ranging from 500 to 1000 °C clearly showed a dependence of orientation texture and surface morphology on substrate orientation (c- and a-plane sapphire) in which the (0001) GaN planes were parallel to the substrate surface. A large increase in interplanar spacing associated with the increase in both a- and c-parameters of the hexagonal lattice and a redshift of the optical bandgap were observed at substrate temperatures higher than 600 °C. The results showed that the tensile stresses produced during the film's growth in high-temperature deposition ranges were much larger than the expected compressive stresses caused by the difference in the thermal expansion coefficients of the film and substrate in the cool-down process after the film growth. The best films were deposited at 500 °C, 30 W and 600 °C, 45 W, which corresponds to conditions where the out diffusion from the film is low. Under these conditions the benefits of the temperature increase because of the decrease in defect density are greater than the problems caused by the strongly strained lattice that occurr at higher temperatures. The results are useful to the analysis of the growth conditions of GaN films by reactive sputtering.

  3. Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels

    SciTech Connect (OSTI)

    Bolat, S. E-mail: aokyay@ee.bilkent.edu.tr; Tekcan, B.; Ozgit-Akgun, C.; Biyikli, N.; Okyay, A. K. E-mail: aokyay@ee.bilkent.edu.tr

    2014-06-16

    We report GaN thin film transistors (TFT) with a thermal budget below 250?°C. GaN thin films are grown at 200?°C by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD). HCPA-ALD-based GaN thin films are found to have a polycrystalline wurtzite structure with an average crystallite size of 9.3?nm. TFTs with bottom gate configuration are fabricated with HCPA-ALD grown GaN channel layers. Fabricated TFTs exhibit n-type field effect characteristics. N-channel GaN TFTs demonstrated on-to-off ratios (I{sub ON}/I{sub OFF}) of 10{sup 3} and sub-threshold swing of 3.3?V/decade. The entire TFT device fabrication process temperature is below 250?°C, which is the lowest process temperature reported for GaN based transistors, so far.

  4. Evaluation of GaN substrates grown in supercritical basic ammonia

    SciTech Connect (OSTI)

    Saito, Makoto; Yamada, Hisashi; Iso, Kenji; Sato, Hitoshi; Hirasawa, Hirohiko; Kamber, Derrick S.; Hashimoto, Tadao; Baars, Steven P. den; Speck, James S.; Nakamura, Shuji [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2009-02-02

    GaN crystals grown by the basic ammonothermal method were investigated for their use as substrates for device regrowth. X-ray diffraction analysis indicated that the substrates contained multiple grains while secondary ion mass spectroscopy (SIMS) revealed a high concentration of hydrogen, oxygen, and sodium. Despite these drawbacks, the emission from the light emitting diode structures grown by metal organic chemical vapor deposition on both the c-plane and m-plane epitaxial wafers was demonstrated. The SIMS depth profiles showed that the diffusion of the alkali metal from the substrate into the epitaxial film was small, especially in the m-direction.

  5. Scanning Kelvin probe microscopy of surface electronic structure in GaN grown by hydride vapor phase epitaxy

    E-Print Network [OSTI]

    Yu, Edward T.

    Scanning Kelvin probe microscopy of surface electronic structure in GaN grown by hydride vapor Engineering and Program in Materials Science and Engineering, University of California at San Diego, La Jolla microscopy is used to image surface potential variations in GaN 0001 grown by hydride vapor phase epitaxy

  6. Surfactant assisted growth of MgO films on GaN

    SciTech Connect (OSTI)

    Paisley, E. A.; Shelton, T. C.; Collazo, R.; Sitar, Z.; Maria, J.-P.; Christen, H. M.; Biegalski, M. D.; Mita, S.

    2012-08-27

    Thin epitaxial films of <111> oriented MgO on [0001]-oriented GaN were grown by molecular beam epitaxy and pulsed laser deposition using the assistance of a vapor phase surfactant. In both cases, surfactant incorporation enabled layer-by-layer growth and a smooth terminal surface by stabilizing the {l_brace}111{r_brace} rocksalt facet. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100 Multiplication-Sign reduction in leakage current density for the surfactant-assisted samples. These data verify numerous predictions regarding the role of H-termination in regulating the habit of rocksalt crystals.

  7. Optimising GaN (1122) hetero-epitaxial templates grown on (1010) sapphire

    E-Print Network [OSTI]

    Pristovsek, Markus; Frentrup, Martin; Han, Yisong; Humphreys, Colin J.

    2015-01-01

    N (112¯2) hetero-epitaxial templates grown on (101¯0) sapphire process was monitored with a two wavelength Laytec EpiTT reflectometer. Two different approaches have been used for the initial GaN buffer. One is a nucleation of GaN islands which were... annealed and overgrown. This approach is described in [2]. The other approach is AlN nucle- ation, which is performed at 5 kPa reactor pressure with a total flow of 21.7 litres/minute. First the re- actor is heated to 1060?C under hydrogen flow and 150 Pa...

  8. Influence of post-deposition annealing on interfacial properties between GaN and ZrO{sub 2} grown by atomic layer deposition

    SciTech Connect (OSTI)

    Ye, Gang; Wang, Hong, E-mail: ewanghong@ntu.edu.sg; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong [Novitas, Nanoelectronics Center of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Geok Ng, Serene Lay; Ji, Rong [Data Storage Institute, Agency for Science Technology and Research (A-STAR), 5 Engineering Drive 1, 117608 (Singapore); Liu, Zhi Hong [Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, Singapore 138602 (Singapore)

    2014-10-13

    Influence of post-deposition annealing on interfacial properties related to the formation/annihilation of interfacial GaO{sub x} layer of ZrO{sub 2} grown by atomic layer deposition (ALD) on GaN is studied. ZrO{sub 2} films were annealed in N{sub 2} atmospheres in temperature range of 300?°C to 700?°C and analyzed by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that Ga-O bond to Ga-N bond area ratio decreases in the samples annealed at temperatures lower than 500?°C, which could be attributed to the thinning of GaO{sub x} layer associated with low surface defect states due to “clean up” effect of ALD-ZrO{sub 2} on GaN. However, further increase in annealing temperature results in deterioration of interface quality, which is evidenced by increase in Ga-O bond to Ga-N bond area ratio and the reduction of Ga-N binding energy.

  9. Catalyst and its diameter dependent growth kinetics of CVD grown GaN nanowires

    SciTech Connect (OSTI)

    Samanta, Chandan [Department of Physics, Indian Institute of Technology Kanpur (India)] [Department of Physics, Indian Institute of Technology Kanpur (India); Chander, D. Sathish [Department of Physics, Indian Institute of Technology Kanpur (India) [Department of Physics, Indian Institute of Technology Kanpur (India); Department of Mechanical Engineering, Indian Institute of Technology Kanpur (India); Ramkumar, J. [Department of Mechanical Engineering, Indian Institute of Technology Kanpur (India)] [Department of Mechanical Engineering, Indian Institute of Technology Kanpur (India); Dhamodaran, S., E-mail: kdams2003@gmail.com [Department of Physics, Indian Institute of Technology Kanpur (India)

    2012-04-15

    Graphical abstract: GaN nanowires with controlled diameter and aspect ratio has been grown using a simple CVD technique. The growth kinetics of CVD grown nanowires investigated in detail for different catalysts and their diameters. A critical diameter important to distinguish the growth regimes has been discussed in detail. The results are important which demonstrates the growth of diameter and aspect ratio controlled GaN nanowires and also understand their growth kinetics. Highlights: Black-Right-Pointing-Pointer Controlled diameter and aspect ratio of GaN nanowires achieved in simple CVD reactor. Black-Right-Pointing-Pointer Nanowire growth kinetics for different catalyst and its diameters were understood. Black-Right-Pointing-Pointer Adatoms vapor pressure inside reactor plays a crucial role in growth kinetics. Black-Right-Pointing-Pointer Diffusion along nanowire sidewalls dominate for gold and nickel catalysts. Black-Right-Pointing-Pointer Gibbs-Thomson effect dominates for palladium catalyst. -- Abstract: GaN nanowires were grown using chemical vapor deposition with controlled aspect ratio. The catalyst and catalyst-diameter dependent growth kinetics is investigated in detail. We first discuss gold catalyst diameter dependent growth kinetics and subsequently compare with nickel and palladium catalyst. For different diameters of gold catalyst there was hardly any variation in the length of the nanowires but for other catalysts with different diameter a strong length variation of the nanowires was observed. We calculated the critical diameter dependence on adatoms pressure inside the reactor and inside the catalytic particle. This gives an increasing trend in critical diameter as per the order gold, nickel and palladium for the current set of experimental conditions. Based on the critical diameter, with gold and nickel catalyst the nanowire growth was understood to be governed by limited surface diffusion of adatoms and by Gibbs-Thomson effect for the palladium catalyst.

  10. Low gap amorphous GaN1-xAsx alloys grown on glass substrate K. M. Yu,1,a

    E-Print Network [OSTI]

    Wu, Junqiao

    absorption coefficient of 105 cm-1 for the amorphous GaN1-xAsx films suggests that relatively thin films-rich GaN1-xAsx Refs. 6­8 and dilute Te-rich ZnOxTe1-x.9 Recently, we overcame the miscibility gap of GaAs fit to the solar spectrum offering the opportunity to design high efficiency multijunction solar cells

  11. Surfactant assisted growth of MgO films on GaN

    SciTech Connect (OSTI)

    Paisley, Elisibeth A.; Shelton, T C; Mita, S; Gaddy, Brian E.; Irving, D L; Christen, Hans M; Sitar, Z; Biegalski, Michael D; Maria, Jon Paul

    2012-01-01

    Thin epitaxial films of <111> oriented MgO on [0001]-oriented GaN were grown by molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) using the assistance of a vapor phase surfactant. In both cases, surfactant incorporation enabled layer-by-layer growth and a smooth terminal surface due to stabilizing the {111} rocksalt facet. MBE growth of MgO in water terminates after several monolayers, and is attributed to saturation of surface active sites needed to facilitate the Mg oxidation reaction. MgO films prepared by PLD grow continuously, this occurs due to the presence of excited oxidizing species in the laser plasma eliminate the need for catalytic surface sites. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly two order of magnitude reduction in leakage current density for the smoother surfactant-assisted samples. Collectively, these data verify numerous predictions and calculations regarding the role of H-termination in regulating the habit of MgO crystals.

  12. Time-resolved photoluminescence studies of free and donor-bound exciton in GaN grown by hydride vapor phase epitaxy

    E-Print Network [OSTI]

    Time-resolved photoluminescence studies of free and donor-bound exciton in GaN grown by hydride and Electrical and Computer Engineering and Photonics Center, Boston University, Boston, Massachusetts, 02215 R in unintentionally doped GaN grown by hydride vapor phase epitaxy. Low temperature (4 K), time-integrated PL spectra

  13. Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

    SciTech Connect (OSTI)

    Bolat, Sami Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

    2015-01-15

    Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N{sub 2}/H{sub 2} PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH{sub 3} PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N{sub 2}:H{sub 2} ambient.

  14. Stimulated Emission from As-grown GaN Hexagons by Selective Area Growth Hydride Vapor Phase Epitaxy

    E-Print Network [OSTI]

    Stimulated Emission from As-grown GaN Hexagons by Selective Area Growth Hydride Vapor Phase Epitaxy Engineering and the Photonics Center, Boston University, 8 Saint Mary's St., Boston, MA 02215-2421, USA R hydride vapor phase epitaxy. We found the threshold for bulk stimulated emission to be 3.4 MW cm2

  15. Cubic GaN formation in MnGaN multilayer films grown on 6H-SiC,,0001... Y. Cui, V. K. Lazorov, M. M. Goetz, H. Liu, D. P. Robertson, M. Gajdardziska-Josifovska,

    E-Print Network [OSTI]

    Li, Lian

    improved film quality possibly due to the surfactant effect of Mn. Based on the one-dimensional Ising model attention due to their applications in blue lasers, light- emitting diodes, and high-temperature electronics-III concentration can be controlled precisely. How- ever, limits exist as to how much one can vary the alloy

  16. Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy

    SciTech Connect (OSTI)

    Duc, Tran Thien; Pozina, Galia; Son, Nguyen Tien; Janzén, Erik; Hemmingsson, Carl; Ohshima, Takeshi

    2014-09-08

    Defects induced by electron irradiation in thick free-standing GaN layers grown by halide vapor phase epitaxy were studied by deep level transient spectroscopy. In as-grown materials, six electron traps, labeled D2 (E{sub C}–0.24?eV), D3 (E{sub C}–0.60?eV), D4 (E{sub C}–0.69?eV), D5 (E{sub C}–0.96?eV), D7 (E{sub C}–1.19?eV), and D8, were observed. After 2?MeV electron irradiation at a fluence of 1?×?10{sup 14?}cm{sup ?2}, three deep electron traps, labeled D1 (E{sub C}–0.12?eV), D5I (E{sub C}–0.89?eV), and D6 (E{sub C}–1.14?eV), were detected. The trap D1 has previously been reported and considered as being related to the nitrogen vacancy. From the annealing behavior and a high introduction rate, the D5I and D6 centers are suggested to be related to primary intrinsic defects.

  17. Importance of strain for green emitters based on (In, Ga)N films of

    E-Print Network [OSTI]

    Ghosh, Sandip

    , adding more In to lower the energy gap of the active layer for obtaining green-light emissionImportance of strain for green emitters based on (In, Ga)N films of non-polar orientation Sandip for obtaining green-light emitting diodes (LED) and lasers in the wavelength range between 520 and 550 nm

  18. Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns

    E-Print Network [OSTI]

    Jahns, Jürgen

    Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns Current crowding in mesa-structure GaInN/GaN light-emitting diodes (LEDs) grown on insulating and a saturation of the optical output power at high injection currents. It is shown that the optical power

  19. Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

    SciTech Connect (OSTI)

    Nandi, R. Mohan, S. Major, S. S.; Srinivasa, R. S.

    2014-04-24

    ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology and vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.

  20. Optimization of ion-atomic beam source for deposition of GaN ultrathin films

    SciTech Connect (OSTI)

    Mach, Jind?ich, E-mail: mach@fme.vutbr.cz; Kolíbal, Miroslav; Zlámal, Jakub; Voborny, Stanislav; Bartošík, Miroslav; Šikola, Tomáš [Institute of Physical Engineering, Brno University of Technology, Technická 2, 616 69 Brno (Czech Republic); CEITEC BUT, Brno University of Technology, Technická 10, 61669 Brno (Czech Republic); Šamo?il, Tomáš [Institute of Physical Engineering, Brno University of Technology, Technická 2, 616 69 Brno (Czech Republic)

    2014-08-15

    We describe the optimization and application of an ion-atomic beam source for ion-beam-assisted deposition of ultrathin films in ultrahigh vacuum. The device combines an effusion cell and electron-impact ion beam source to produce ultra-low energy (20–200 eV) ion beams and thermal atomic beams simultaneously. The source was equipped with a focusing system of electrostatic electrodes increasing the maximum nitrogen ion current density in the beam of a diameter of ?15 mm by one order of magnitude (j ? 1000 nA/cm{sup 2}). Hence, a successful growth of GaN ultrathin films on Si(111) 7 × 7 substrate surfaces at reasonable times and temperatures significantly lower (RT, 300?°C) than in conventional metalorganic chemical vapor deposition technologies (?1000?°C) was achieved. The chemical composition of these films was characterized in situ by X-ray Photoelectron Spectroscopy and morphology ex situ using Scanning Electron Microscopy. It has been shown that the morphology of GaN layers strongly depends on the relative Ga-N bond concentration in the layers.

  1. Characterization of GaN nanowires grown on PSi, PZnO and PGaN on Si (111) substrates by thermal evaporation

    SciTech Connect (OSTI)

    Shekari, Leila; Hassan, Haslan Abu; Thahab, Sabah M.; Hassan, Zainuriah [Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Materials Engineering Department, College of Engineering, University of Kufa, Najaf (Iraq); Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

    2012-06-20

    In this research, we used an easy and inexpensive method to synthesize highly crystalline GaN nanowires (NWs); on different substrates such as porous silicon (PSi), porous zinc oxide (PZnO) and porous gallium nitride (PGaN) on Si (111) wafer by thermal evaporation using commercial GaN powder without any catalyst. Micro structural studies by scanning electron microscopy and transmission electron microscope measurements reveal the role of different substrates in the morphology, nucleation and alignment of the GaN nanowires. The degree of alignment of the synthesized nanowires does not depend on the lattice mismatch between wires and their substrates. Further structural and optical characterizations were performed using high resolution X-ray diffraction and energy-dispersive X-ray spectroscopy. Results indicate that the nanowires are of single-crystal hexagonal GaN. The quality and density of grown GaN nanowires for different substrates are highly dependent on the lattice mismatch between the nanowires and their substrates and also on the size of the porosity of the substrates. Nanowires grown on PGaN have the best quality and highest density as compared to nanowires on other substrates. By using three kinds of porous substrates, we are able to study the increase in the alignment and density of the nanowires.

  2. Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

    SciTech Connect (OSTI)

    Zhang Meng; Bhattacharya, Pallab; Guo Wei; Banerjee, Animesh [Department of Electrical Engineering and Computer Science, Solid-State Electronics Laboratory, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

    2010-03-29

    Acceptor doping of GaN with Mg during plasma-assisted molecular beam epitaxy, under N-rich conditions and a relatively high growth temperature of 740 deg. C, was investigated. The p-doping level steadily increases with increasing Mg flux. The highest doping level achieved, determined from Hall measurements, is 2.1x10{sup 18} cm{sup -3}. The corresponding doping efficiency and hole mobility are approx4.9% and 3.7 cm{sup 2}/V s at room temperature. Cross-sectional transmission electron microscopy and photoluminescence measurements confirm good crystalline and optical quality of the Mg-doped layers. An InGaN/GaN quantum dot light emitting diode (lambda{sub peak}=529 nm) with p-GaN contact layers grown under N-rich condition exhibits a low series resistance of 9.8 OMEGA.

  3. p-type GaN grown by phase shift epitaxy

    SciTech Connect (OSTI)

    Zhong, M.; Steckl, A. J., E-mail: a.steckl@uc.edu [Department of Electrical Engineering and Computing Systems, University of Cincinnati, Cincinnati, Ohio 45221-0030 (United States); Roberts, J. [Nitronex Corporation, Raleigh, North Carolina 27606 (United States)] [Nitronex Corporation, Raleigh, North Carolina 27606 (United States); Kong, W.; Brown, A. S. [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States)] [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States)

    2014-01-06

    Phase shift epitaxy (PSE) is a periodic growth scheme, which desynchronizes host material growth process from dopant incorporation, allowing independent optimization. p-type doping of GaN with Mg by PSE is accomplished with molecular beam epitaxy by periodic shutter action (in order to iterate between Ga- and N-rich surface conditions) and by adjusting time delays between dopant and Ga shutters. Optimum PSE growth was obtained by turning on the Mg flux in the N-rich condition. This suppresses Mg self-compensation at high Mg concentration and produces fairly high hole concentrations (2.4?×?10{sup 18}?cm{sup ?3})

  4. Electroreflectance study of the effect of {gamma} radiation on the optical properties of epitaxial GaN films

    SciTech Connect (OSTI)

    Belyaev, A. E.; Klyui, N. I. Konakova, R. V.; Lukyanov, A. N.; Danilchenko, B. A.; Sveshnikov, J. N.; Klyui, A. N.

    2012-03-15

    Experimental data on the electroreflectance spectra of {gamma}-irradiated epitaxial GaN films on sapphire are reported. The irradiation doses are 10{sup 5}-2 Multiplication-Sign 10{sup 6} rad. The theoretical electroreflectance spectra calculated on the basis of a model of three types of transitions are in agreement with experimental data with reasonable accuracy. The energies and broadenings of the transitions derived in the context of the model give grounds to infer that, in the GaN films, there are internal stresses dependent on the {gamma}-irradiation dose.

  5. Method of growing GaN films with a low density of structural defects using an interlayer

    DOE Patents [OSTI]

    Bourret-Courchesne, Edith D. (Richmond, CA)

    2003-01-01

    A dramatic reduction of the dislocation density in GaN was obtained by insertion of a single thin interlayer grown at an intermediate temperature (IT-IL) after the growth of an initial grown at high temperature. A description of the growth process is presented with characterization results aimed at understanding the mechanisms of reduction in dislocation density. A large percentage of the threading dislocations present in the first GaN epilayer are found to bend near the interlayer and do not propagate into the top layer which grows at higher temperature in a lateral growth mode. TEM studies show that the mechanisms of dislocation reduction are similar to those described for the epitaxial lateral overgrowth process, however a notable difference is the absence of coalescence boundaries.

  6. Structural properties of free-standing 50 mm diameter GaN waferswith (101_0) orientation grown on LiAlO2

    SciTech Connect (OSTI)

    Jasinski, Jacek; Liliental-Weber, Zuzanna; Maruska, Herbert-Paul; Chai, Bruce H.; Hill, David W.; Chou, Mitch M.C.; Gallagher, John J.; Brown, Stephen

    2005-09-27

    (10{und 1}0) GaN wafers grown on (100) face of {gamma}-LiAlO{sub 2} were studied using transmission electron microscopy. Despite good lattice matching in this heteroepitaxial system, high densities of planar structural defects in the form of stacking faults on the basal plane and networks of boundaries located on prism planes inclined to the layer/substrate interface were present in these GaN layers. In addition, significant numbers of threading dislocations were observed. High-resolution electron microscopy indicates that stacking faults present on the basal plane in these layers are of low-energy intrinsic I1type. This is consistent with diffraction contrast experiments.

  7. Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy

    SciTech Connect (OSTI)

    Lotsari, A.; Kehagias, Th.; Katsikini, M.; Arvanitidis, J.; Ves, S.; Komninou, Ph.; Dimitrakopulos, G. P.; Tsiakatouras, G.; Tsagaraki, K.; Georgakilas, A.; Christofilos, D.

    2014-06-07

    Heteroepitaxial non-polar III-Nitride layers may exhibit extensive anisotropy in the surface morphology and the epilayer microstructure along distinct in-plane directions. The structural anisotropy, evidenced by the “M”-shape dependence of the (112{sup ¯}0) x-ray rocking curve widths on the beam azimuth angle, was studied by combining transmission electron microscopy observations, Raman spectroscopy, high resolution x-ray diffraction, and atomic force microscopy in a-plane GaN epilayers grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). The structural anisotropic behavior was attributed quantitatively to the high dislocation densities, particularly the Frank-Shockley partial dislocations that delimit the I{sub 1} intrinsic basal stacking faults, and to the concomitant plastic strain relaxation. On the other hand, isotropic samples exhibited lower dislocation densities and a biaxial residual stress state. For PAMBE growth, the anisotropy was correlated to N-rich (or Ga-poor) conditions on the surface during growth, that result in formation of asymmetric a-plane GaN grains elongated along the c-axis. Such conditions enhance the anisotropy of gallium diffusion on the surface and reduce the GaN nucleation rate.

  8. Bi-Sr-Ca-Cu-O thin films grown by flash evaporation and pulsed laser deposition 

    E-Print Network [OSTI]

    Ganapathy Subramanian, Santhana

    2004-09-30

    -phase 2212 films were grown on a MgO substrate using the pulsed laser deposition technique from commercially available 2212 powder. The effect of annealing on the thin films was also studied....

  9. Characterization of Zirconium Phosphate/Polycation Thin Films Grown by Sequential Adsorption Reactions

    E-Print Network [OSTI]

    Characterization of Zirconium Phosphate/Polycation Thin Films Grown by Sequential Adsorption Received April 7, 1997X Monolayer and multilayer thin films consisting of anionic R-zirconium phosphate (R

  10. Photoconduction efficiencies and dynamics in GaN nanowires grown by chemical vapor deposition and molecular beam epitaxy: A comparison study

    SciTech Connect (OSTI)

    Chen, R. S. [Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Tsai, H. Y. [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Huang, Y. S. [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Chen, Y. T. [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Chen, L. C. [Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China); Chen, K. H. [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China)

    2012-09-10

    The normalized gains, which determines the intrinsic photoconduction (PC) efficiencies, have been defined and compared for the gallium nitride (GaN) nanowires (NWs) grown by chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). By excluding the contributions of experimental parameters and under the same light intensity, the CVD-grown GaN NWs exhibit the normalized gain which is near two orders of magnitude higher than that of the MBE-ones. The temperature-dependent time-resolved photocurrent measurement further indicates that the higher photoconduction efficiency in the CVD-GaN NWs is originated from the longer carrier lifetime induced by the higher barrier height ({phi}{sub B} = 160 {+-} 30 mV) of surface band bending. In addition, the experimentally estimated barrier height at 20 {+-} 2 mV for the MBE-GaN NWs, which is much lower than the theoretical value, is inferred to be resulted from the lower density of charged surface states on the non-polar side walls.

  11. Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces

    DOE Patents [OSTI]

    Li, Qiming; Wang, George T

    2015-01-13

    A method for forming a surface-textured single-crystal film layer by growing the film atop a layer of microparticles on a substrate and subsequently selectively etching away the microparticles to release the surface-textured single-crystal film layer from the substrate. This method is applicable to a very wide variety of substrates and films. In some embodiments, the film is an epitaxial film that has been grown in crystallographic alignment with respect to a crystalline substrate.

  12. Depth dependence of defect density and stress in GaN grown on SiC Department of Electrical and Computer Engineering, University of Delaware, 140 Evans Hall, Newark,

    E-Print Network [OSTI]

    Holtz, Mark

    of Electrical and Computer Engineering, University of Delaware, 140 Evans Hall, Newark, Delaware 19716 H. Temkin Department of Electrical Engineering, Texas Tech University, Lubbock, Texas 79409 I. Ahmad and M. Holtz 2 107 /cm2 in GaN layer grown by hydride vapor phase epitaxy HVPE on SiC 0001 .16 Despite a number

  13. Hydride vapor phase GaN films with reduced density of residual electrons and deep traps

    SciTech Connect (OSTI)

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Yugova, T. G.; Cox, H.; Helava, H.; Makarov, Yu.; Usikov, A. S.

    2014-05-14

    Electrical properties and deep electron and hole traps spectra are compared for undoped n-GaN films grown by hydride vapor phase epitaxy (HVPE) in the regular process (standard HVPE samples) and in HVPE process optimized for decreasing the concentration of residual donor impurities (improved HVPE samples). It is shown that the residual donor density can be reduced by optimization from ?10{sup 17}?cm{sup ?3} to (2–5)?×?10{sup 14}?cm{sup ?3}. The density of deep hole traps and deep electron traps decreases with decreased donor density, so that the concentration of deep hole traps in the improved samples is reduced to ?5?×?10{sup 13}?cm{sup ?3} versus 2.9?×?10{sup 16}?cm{sup ?3} in the standard samples, with a similar decrease in the electron traps concentration.

  14. Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures

    SciTech Connect (OSTI)

    Shelton, Christopher T.; Sachet, Edward; Paisley, Elizabeth A.; Hoffmann, Marc P.; Rajan, Joseph; Collazo, Ramón; Sitar, Zlatko; Maria, Jon-Paul

    2014-01-28

    We demonstrate the use of anomalous x-ray scattering of constituent cations at their absorption edge, in a conventional Bragg-Brentano diffractometer, to measure absolutely and quantitatively the polar orientation and polarity fraction of unipolar and mixed polar wurtzitic crystals. In one set of experiments, the gradual transition between c+ and c? polarity of epitaxial ZnO films on sapphire as a function of MgO buffer layer thickness is monitored quantitatively, while in a second experiment, we map the polarity of a lateral polar homojunction in GaN. The dispersion measurements are compared with piezoforce microscopy images, and we demonstrate how x-ray dispersion and scanning probe methods can provide complementary information that can discriminate between polarity fractions at a material surface and polarity fractions averaged over the film bulk.

  15. Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy

    SciTech Connect (OSTI)

    Reuters, Benjamin; Finken, M.; Wille, A.; Kalisch, H.; Vescan, A.; Hollaender, B.; Heuken, M.

    2012-11-01

    Quaternary AlInGaN layers were grown on conventional GaN buffer layers on sapphire by metal organic vapour phase epitaxy at different surface temperatures and different reactor pressures with constant precursor flow conditions. A wide range in compositions within 30-62% Al, 5-29% In, and 23-53% Ga was covered, which leads to different strain states from high tensile to high compressive. From high-resolution x-ray diffraction and Rutherford backscattering spectrometry, we determined the compositions, strain states, and crystal quality of the AlInGaN layers. Atomic force microscopy measurements were performed to characterize the surface morphology. A critical strain value for maximum In incorporation near the AlInGaN/GaN interface is presented. For compressively strained layers, In incorporation is limited at the interface as residual strain cannot exceed an empirical critical value of about 1.1%. Relaxation occurs at about 15 nm thickness accompanied by strong In pulling. Tensile strained layers can be grown pseudomorphically up to 70 nm at a strain state of 0.96%. A model for relaxation in compressively strained AlInGaN with virtual discrete sub-layers, which illustrates the gradually changing lattice constant during stress reduction is presented.

  16. Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN

    SciTech Connect (OSTI)

    Armstrong, A. M.; Kelchner, K.; Nakamura, S.; DenBaars, S. P.; Materials Department, University of California, Santa Barbara, California 93106 ; Speck, J. S.

    2013-12-02

    The dependence of deep level defect incorporation in m-plane GaN films grown by metal-organic chemical vapor deposition on bulk m-plane GaN substrates as a function of growth temperature (T{sub g}) and T{sub g} ramping method was investigated using deep level optical spectroscopy. Understanding the influence of T{sub g} on GaN deep level incorporation is important for InGaN/GaN multi-quantum well (MQW) light emitting diodes (LEDs) and laser diodes (LDs) because GaN quantum barrier (QB) layers are grown much colder than thin film GaN to accommodate InGaN QW growth. Deep level spectra of low T{sub g} (800?°C) GaN films grown under QB conditions were compared to deep level spectra of high T{sub g} (1150?°C) GaN. Reducing T{sub g}, increased the defect density significantly (>50×) through introduction of emergent deep level defects at 2.09?eV and 2.9?eV below the conduction band minimum. However, optimizing growth conditions during the temperature ramp when transitioning from high to low T{sub g} substantially reduced the density of these emergent deep levels by approximately 40%. The results suggest that it is important to consider the potential for non-radiative recombination in QBs of LED or LD active regions, and tailoring the transition from high T{sub g} GaN growth to active layer growth can mitigate such non-radiative channels.

  17. Temperature threshold for nanorod structuring of metal and oxide films grown by glancing angle deposition

    SciTech Connect (OSTI)

    Deniz, Derya; Lad, Robert J.

    2011-01-15

    Thin films of tin (Sn), aluminum (Al), gold (Au), ruthenium (Ru), tungsten (W), ruthenium dioxide (RuO{sub 2}), tin dioxide (SnO{sub 2}), and tungsten trioxide (WO{sub 3}) were grown by glancing angle deposition (GLAD) to determine the nanostructuring temperature threshold, {Theta}{sub T}, above which adatom surface diffusion becomes large enough such that nanorod morphology is no longer formed during growth. The threshold was found to be lower in metals compared to oxides. Films were grown using both dc and pulsed dc magnetron sputtering with continuous substrate rotation over the temperature range from 291 to 866 K. Film morphologies, structures, and compositions were characterized by high resolution scanning electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy. Films were also grown in a conventional configuration for comparison. For elemental metals, nanorod structuring occurs for films with melting points higher than that of Al (933 K) when grown at room temperature with a rotation rate of {approx}5 rpm, corresponding to a value of {Theta}{sub T}{approx_equal}0.33{+-}0.01. For the oxide films, a value of {Theta}{sub T}{approx_equal}0.5 was found, above which GLAD nanorod structuring does not occur. The existence of a nanostructuring temperature threshold in both metal and oxide GLAD films can be attributed to greater adatom mobilities as temperature is increased resulting in nonkinetically limited film nucleation and growth processes.

  18. Optical properties of Al2O3 thin films grown by atomic layer deposition

    E-Print Network [OSTI]

    Avrutsky, Ivan

    Optical properties of Al2O3 thin films grown by atomic layer deposition Pradeep Kumar,1, * Monika K); published 25 September 2009 We employed the atomic layer deposition technique to grow Al2O3 films fabricated by atomic layer deposition. © 2009 Optical Society of America OCIS codes: 310.6860, 310.2790, 160

  19. Electro-mechanical coupling of semiconductor film grown on stainless steel by oxidation

    E-Print Network [OSTI]

    Volinsky, Alex A.

    Electro-mechanical coupling of semiconductor film grown on stainless steel by oxidation M. C. Lin,1) Electro-mechanical coupling phenomenon in oxidation film on stainless steel has been discovered by using Publishing LLC. [http://dx.doi.org/10.1063/1.4824072] It is generally known that stainless steel (SS) has

  20. Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

    SciTech Connect (OSTI)

    Greenlee, Jordan D.; Feigelson, Boris N.; Anderson, Travis J.; Hite, Jennifer K.; Mastro, Michael A.; Eddy, Charles R.; Hobart, Karl D.; Kub, Francis J.; Tadjer, Marko J.

    2014-08-14

    The first step of a multi-cycle rapid thermal annealing process was systematically studied. The surface, structure, and optical properties of Mg implanted GaN thin films annealed at temperatures ranging from 900 to 1200?°C were investigated by Raman spectroscopy, photoluminescence, UV-visible spectroscopy, atomic force microscopy, and Nomarski microscopy. The GaN thin films are capped with two layers of in-situ metal organic chemical vapor deposition -grown AlN and annealed in 24 bar of N{sub 2} overpressure to avoid GaN decomposition. The crystal quality of the GaN improves with increasing annealing temperature as confirmed by UV-visible spectroscopy and the full widths at half maximums of the E{sub 2} and A{sub 1} (LO) Raman modes. The crystal quality of films annealed above 1100?°C exceeds the quality of the as-grown films. At 1200?°C, Mg is optically activated, which is determined by photoluminescence measurements. However, at 1200?°C, the GaN begins to decompose as evidenced by pit formation on the surface of the samples. Therefore, it was determined that the optimal temperature for the first step in a multi-cycle rapid thermal anneal process should be conducted at 1150?°C due to crystal quality and surface morphology considerations.

  1. WRINKLING OF a-ALUMINA FILMS GROWN BY OXIDATIONII. OXIDE SEPARATION AND FAILURE

    E-Print Network [OSTI]

    Clarke, David R.

    of thermal cycling on these modes of separation and how they may lead to oxide spalling are discussed. # 1998WRINKLING OF a-ALUMINA FILMS GROWN BY OXIDATIONÐII. OXIDE SEPARATION AND FAILURE V. K. TOLPYGO oxidation and cooling to room temperature. One type is a form of buckling where the size of the detached

  2. Open-core screw dislocations in GaN epilayers observed by scanning force microscopy and high-resolution transmission electron microscopy

    E-Print Network [OSTI]

    Rohrer, Gregory S.

    -resolution transmission electron microscopy W. Qian, G. S. Rohrer, and M. Skowronski Department of Materials Science. K. Gaskill Laboratory for Advanced Material Synthesis, Naval Research Laboratory, Washington, DC of organometallic vapor phase epitaxy grown -GaN films using high-resolution transmission electron microscopy

  3. An analysis of the x-ray linear dichroism spectrum for NiO thin films grown on vicinal Ag(001)

    E-Print Network [OSTI]

    Wu, Y.Z.

    2008-01-01

    dichroism spectrum for NiO thin films grown on vicinal Ag(Antiferromagnetic (AFM) NiO thin films are grown epitaxiallyXLD). We find that the NiO AFM spin exhibits an in- plane

  4. Elastic properties of B-C-N films grown by N{sub 2}-reactive sputtering from boron carbide targets

    SciTech Connect (OSTI)

    Salas, E.; Jiménez Riobóo, R. J.; Jiménez-Villacorta, F.; Prieto, C.; Sánchez-Marcos, J.; Dept. Química-Física Aplicada, Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid ; Muñoz-Martín, A.; Prieto, J. E.; Joco, V.

    2013-12-07

    Boron-carbon-nitrogen films were grown by RF reactive sputtering from a B{sub 4}C target and N{sub 2} as reactive gas. The films present phase segregation and are mechanically softer than boron carbide films (a factor of more than 2 in Young's modulus). This fact can turn out as an advantage in order to select buffer layers to better anchor boron carbide films on substrates eliminating thermally induced mechanical tensions.

  5. Characteristics of SiO2 Film Grown by Atomic Layer Deposition as the Gate Insulator of Low-Temperature Polysilicon Thin-Film Transistors

    E-Print Network [OSTI]

    Cao, Guozhong

    Characteristics of SiO2 Film Grown by Atomic Layer Deposition as the Gate Insulator of Low a Corresponding author: skrha@hanbat.ac.kr Keywords: atomic layer deposition (ALD), silicon dioxide (SiO2), dichlorosilane (SiH2Cl2), ozone (O3) Abstract. SiO2 films were prepared by atomic layer deposition (ALD

  6. Unexpected behaviour of one Pb monolayer deposited on aluminum oxide thin film grown on Ag(111)

    SciTech Connect (OSTI)

    Vizzini, Sébastien, E-mail: sebastien.vizzini@im2np.fr; Bertoglio, M. [IM2NP CNRS, Aix Marseille Université, F-13397 Marseille (France)] [IM2NP CNRS, Aix Marseille Université, F-13397 Marseille (France); Oughaddou, Hamid [Institut des Sciences Moléculaires d'Orsay, ISMO CNRS, Université de Paris, F-91405 Orsay, France and Deptartamento de Physique, Université de Cergy-Pontoise, F-95031 Cergy-Pontoise (France)] [Institut des Sciences Moléculaires d'Orsay, ISMO CNRS, Université de Paris, F-91405 Orsay, France and Deptartamento de Physique, Université de Cergy-Pontoise, F-95031 Cergy-Pontoise (France); Hoarau, J. Y.; Biberian, J. P.; Aufray, B. [CINaM CNRS, Aix Marseille Université, F-13288 Marseille (France)] [CINaM CNRS, Aix Marseille Université, F-13288 Marseille (France)

    2013-12-23

    Using scanning tunneling microscopy (STM), Auger electron spectroscopy, and low energy electron diffraction, we have observed a surprising complete dissolution at room temperature of one lead monolayer deposited by evaporation on an aluminum oxide thin film (?0.8?nm thick) previously grown on Ag (111). We have observed the quasi-instantaneous diffusion of the lead deposit through the oxide layer to the silver/oxide interface. After the diffusion process, lead atoms form a Moiré superstructure, which is characterized by STM through the oxide layer. This unexpected behavior puts in light the very weak interaction between the aluminum oxide and the silver substrate.

  7. Nanostructural engineering of nitride nucleation layers for GaN substrate dislocation reduction.

    SciTech Connect (OSTI)

    Koleske, Daniel David; Lee, Stephen Roger; Lemp, Thomas Kerr; Coltrin, Michael Elliott; Cross, Karen Charlene; Thaler, Gerald

    2009-07-01

    With no lattice matched substrate available, sapphire continues as the substrate of choice for GaN growth, because of its reasonable cost and the extensive prior experience using it as a substrate for GaN. Surprisingly, the high dislocation density does not appear to limit UV and blue LED light intensity. However, dislocations may limit green LED light intensity and LED lifetime, especially as LEDs are pushed to higher current density for high end solid state lighting sources. To improve the performance for these higher current density LEDs, simple growth-enabled reductions in dislocation density would be highly prized. GaN nucleation layers (NLs) are not commonly thought of as an application of nano-structural engineering; yet, these layers evolve during the growth process to produce self-assembled, nanometer-scale structures. Continued growth on these nuclei ultimately leads to a fully coalesced film, and we show in this research program that their initial density is correlated to the GaN dislocation density. In this 18 month program, we developed MOCVD growth methods to reduce GaN dislocation densities on sapphire from 5 x 10{sup 8} cm{sup -2} using our standard delay recovery growth technique to 1 x 10{sup 8} cm{sup -2} using an ultra-low nucleation density technique. For this research, we firmly established a correlation between the GaN nucleation thickness, the resulting nucleation density after annealing, and dislocation density of full GaN films grown on these nucleation layers. We developed methods to reduce the nuclei density while still maintaining the ability to fully coalesce the GaN films. Ways were sought to improve the GaN nuclei orientation by improving the sapphire surface smoothness by annealing prior to the NL growth. Methods to eliminate the formation of additional nuclei once the majority of GaN nuclei were developed using a silicon nitride treatment prior to the deposition of the nucleation layer. Nucleation layer thickness was determined using optical reflectance and the nucleation density was determined using atomic force microscopy (AFM) and Nomarski microscopy. Dislocation density was measured using X-ray diffraction and AFM after coating the surface with silicon nitride to delineate all dislocation types. The program milestone of producing GaN films with dislocation densities of 1 x 10{sup 8} cm{sup -2} was met by silicon nitride treatment of annealed sapphire followed by the multiple deposition of a low density of GaN nuclei followed by high temperature GaN growth. Details of this growth process and the underlying science are presented in this final report along with problems encountered in this research and recommendations for future work.

  8. Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic

    SciTech Connect (OSTI)

    Izhnin, I. I.; Dvoretsky, S. A.; Mikhailov, N. N.; Varavin, V. S.; Mynbaev, K. D.; Fitsych, O. I.; Pociask-Bialy, M.; Sheregii, E.; Voitsekhovskii, A. V.

    2014-04-28

    A defect study was performed on molecular beam epitaxy-grown HgCdTe films in situ doped with arsenic. Doping was performed from either effusion cell or cracker cell, and studied were both as-grown samples and samples subjected to arsenic activation annealing. Electrical properties of the films were investigated with the use of ion milling as a means of “stirring” defects in the material. As a result of the study, it was confirmed that the most efficient incorporation of electrically active arsenic occurs at the cracking zone temperature of 700?°C. Interaction between arsenic and tellurium during the growth was observed and is discussed in the paper.

  9. Characterization of Epitaxial Film Silicon Solar Cells Grown on Seeded Display Glass: Preprint

    SciTech Connect (OSTI)

    Young, D. L.; Grover, S.; Teplin, C.; Stradins, P.; LaSalvia, V.; Chuang, T. K.; Couillard, J. G.; Branz, H. M.

    2012-06-01

    We report characterizations of epitaxial film crystal silicon (c-Si) solar cells with open-circuit voltages (Voc) above 560 mV. The 2-um absorber cells are grown by low-temperature (<750 degrees C) hot-wire CVD (HWCVD) on Corning EAGLE XG display glass coated with a layer-transferred (LT) Si seed. The high Voc is a result of low-defect epitaxial Si (epi-Si) growth and effective hydrogen passivation of defects. The quality of HWCVD epitaxial growth on seeded glass substrates depends on the crystallographic quality of the seed and the morphology of the epitaxial growth surface. Heterojunction devices consist of glass/c-Si LT seed/ epi n+ Si:P/epi n- Si:P/intrinsic a-Si:H/p+ a-Si:H/ITO. Similar devices grown on electronically 'dead' n+ wafers have given Voc {approx}630 mV and {approx}8% efficiency with no light trapping features. Here we study the effects of the seed surface polish on epi-Si quality, how hydrogenation influences the device character, and the dominant junction transport physics.

  10. Characterization of CdS thin films grown by chemical bath deposition using four different cadmium sources

    E-Print Network [OSTI]

    Chow, Lee

    , such as cadmium sulfate [8,9], cadmium acetate [10­14], cadmium iodide/nitrate [15­18], and cadmium chloride [11Characterization of CdS thin films grown by chemical bath deposition using four different cadmium January 2008 Abstract A comprehensive study of the effect of cadmium sources on chemical bath deposited

  11. High-frequency electromagnetic properties of epitaxial Bi2FeCrO6 thin films grown by pulsed laser deposition

    E-Print Network [OSTI]

    High-frequency electromagnetic properties of epitaxial Bi2FeCrO6 thin films grown by pulsed laser on the electromagnetic (EM) properties in high-frequency domain (HF) of multiferroic Bi2FeCrO6 (BFCO) thin films. The films were epitaxially grown on SrTiO3 substrates by pulsed laser ablation. Typical 50 nm-thick BFCO

  12. Structural defects in GaN revealed by Transmission Electron Microscopy

    SciTech Connect (OSTI)

    Liliental-Weber, Zuzanna

    2014-04-18

    This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

  13. Characterization of oxynitride dielectric films grown in NO/O{sub 2} mixtures by rapid thermal oxynitridation

    SciTech Connect (OSTI)

    EVERIST,SARAH C.; MEISENHEIMER,TIMOTHY L.; NELSON,GERALD C.; SMITH,PAUL M.

    2000-02-29

    Ultra-thin oxynitride films were grown on Si by direct rapid thermal processing (RTP) oxynitridation in NO/O{sub 2} ambients with NO concentrations from 5% to 50%. During oxynitridation, nitrogen accumulated at the Si/dielectric interface and the average concentration of in N through the resulting films ranged from 0.3 to 3.0 atomic percent. The average concentration of N in the films increased with increasing NO in the ambient gas, but decreased with longer RTP times. The maximum N concentration remained relatively constant for all RTP times and a given NO/O{sub 2} ambient. Re-oxidation following oxynitridation altered L the N profile and improved the electrical characteristics, with an optimal NO/O{sub 2} mixture in the range of 10% to 25% NO. Re-oxidation by RTP improves the electrical characteristics with respect to the films that were not re-oxidized and produces only slight changes in the N distribution or maximum concentration. The electrical results also indicate that oxynitride films are superior to comparably grown oxide films.

  14. Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction

    SciTech Connect (OSTI)

    Roberts, J.G.

    2000-05-01

    The surface structures of NaCl(100), LiF(100) and alpha-MgCl2(0001) adsorbed on various metal single crystals have been determined by low energy electron diffraction (LEED). Thin films of these salts were grown on metal substrates by exposing the heated metal surface to a molecular flux of salt emitted from a Knudsen cell. This method of investigating thin films of insulators (ionic salts) on a conducting substrate (metal) circumvents surface charging problems that plagued bulk studies, thereby allowing the use of electron-based techniques to characterize the surface.

  15. Residual Stress in CVD-grown 3C-SiC Films on Si Substrates Alex A. Volinsky1

    E-Print Network [OSTI]

    Volinsky, Alex A.

    strain. EXPERIMENT Single crystal 3C-SiC films were grown hetero-epitaxially in a hot-wall chemical vapor pressure in a flow of 16 standard cubic centimeters per minute (sccm) of C3H8 and 10 standard liters per. During the ramp, the propane flow was linearly decreased to 8.0 sccm for a (100) Si substrate or to 5

  16. GaN based nanorods for solid state lighting

    SciTech Connect (OSTI)

    Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

    2012-04-01

    In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

  17. High electron mobility thin-film transistors based on Ga{sub 2}O{sub 3} grown by atmospheric ultrasonic spray pyrolysis at low temperatures

    SciTech Connect (OSTI)

    Thomas, Stuart R. E-mail: thomas.anthopoulos@imperial.ac.uk; Lin, Yen-Hung; Faber, Hendrik; Anthopoulos, Thomas D. E-mail: thomas.anthopoulos@imperial.ac.uk; Adamopoulos, George; Sygellou, Labrini; Stratakis, Emmanuel; Pliatsikas, Nikos; Patsalas, Panos A.

    2014-09-01

    We report on thin-film transistors based on Ga{sub 2}O{sub 3} films grown by ultrasonic spray pyrolysis in ambient atmosphere at 400–450?°C. The elemental, electronic, optical, morphological, structural, and electrical properties of the films and devices were investigated using a range of complementary characterisation techniques, whilst the effects of post deposition annealing at higher temperature (700?°C) were also investigated. Both as-grown and post-deposition annealed Ga{sub 2}O{sub 3} films are found to be slightly oxygen deficient, exceptionally smooth and exhibit a wide energy bandgap of ?4.9?eV. Transistors based on as-deposited Ga{sub 2}O{sub 3} films show n-type conductivity with the maximum electron mobility of ?2?cm{sup 2}/V s.

  18. ECR Nb Films Grown on Amorphous and Crystalline Cu Substrates: Influence of Ion Energy

    SciTech Connect (OSTI)

    Valente, Anne-Marie; Eremeev, Grigory V.; Spradlin, Joshua K.; Phillips, H. Lawrence; Reece, Charles E.; Cao, C.; Proslier, Thomas; Tao, T.

    2014-02-01

    In the pursuit of niobium (Nb) films with similar performance with the commonly used bulk Nb surfaces for Superconducting RF (SRF) applications, significant progress has been made with the development of energetic condensation deposition techniques. Using energetic condensation of ions extracted from plasma generated by Electron Cyclotron Resonance, it has been demonstrated that Nb films with good structural properties and RRR comparable to bulk values can be produced on metallic substrates. The controlled incoming ion energy enables a number of processes such as desorption of adsorbed species, enhanced mobility of surface atoms and sub-implantation of impinging ions, thus producing improved film structures at lower process temperatures. Particular attention is given to the nucleation conditions to create a favourable template for growing the final surface exposed to SRF fields. The influence of the deposition energy on film growth on copper substrates is investigated with the characterization of the film surface, structure, superconducting properties and RF performance.

  19. Characterization of diamond-like nanocomposite thin films grown by plasma enhanced chemical vapor deposition

    SciTech Connect (OSTI)

    Santra, T. S.; Liu, C. H. [Institute of Nanoengineering and Microsystems (NEMS), National Tsing Hua University, Hsinchu, Taiwan 30043 (China); Bhattacharyya, T. K. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721302, West Bengal (India); Patel, P. [Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801 (United States); Barik, T. K. [School of Applied Sciences, Haldia Institute of Technology, Haldia 721657, Purba Medinipur, West Bengal (India)

    2010-06-15

    Diamond-like nanocomposite (DLN) thin films, comprising the networks of a-C:H and a-Si:O were deposited on pyrex glass or silicon substrate using gas precursors (e.g., hexamethyldisilane, hexamethyldisiloxane, hexamethyldisilazane, or their different combinations) mixed with argon gas, by plasma enhanced chemical vapor deposition technique. Surface morphology of DLN films was analyzed by atomic force microscopy. High-resolution transmission electron microscopic result shows that the films contain nanoparticles within the amorphous structure. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) were used to determine the structural change within the DLN films. The hardness and friction coefficient of the films were measured by nanoindentation and scratch test techniques, respectively. FTIR and XPS studies show the presence of C-C, C-H, Si-C, and Si-H bonds in the a-C:H and a-Si:O networks. Using Raman spectroscopy, we also found that the hardness of the DLN films varies with the intensity ratio I{sub D}/I{sub G}. Finally, we observed that the DLN films has a better performance compared to DLC, when it comes to properties like high hardness, high modulus of elasticity, low surface roughness and low friction coefficient. These characteristics are the critical components in microelectromechanical systems (MEMS) and emerging nanoelectromechanical systems (NEMS).

  20. Field emission from bias-grown diamond thin films in a microwave plasma

    DOE Patents [OSTI]

    Gruen, Dieter M. (Downers Grove, IL); Krauss, Alan R. (Naperville, IL); Ding, Ming Q. (Beijing, CN); Auciello, Orlando (Bolinbrook, IL)

    2002-01-01

    A method of producing diamond or diamond like films in which a negative bias is established on a substrate with an electrically conductive surface in a microwave plasma chemical vapor deposition system. The atmosphere that is subjected to microwave energy includes a source of carbon, nitrogen and hydrogen. The negative bias is maintained on the substrate through both the nucleation and growth phase of the film until the film is continuous. Biases between -100V and -200 are preferred. Carbon sources may be one or more of CH.sub.4, C.sub.2 H.sub.2 other hydrocarbons and fullerenes.

  1. Flexible cadmium telluride thin films grown on electron-beam-irradiated graphene/thin glass substrates

    SciTech Connect (OSTI)

    Seo, Won-Oh; Kim, Jihyun, E-mail: hyunhyun7@korea.ac.kr [Department of Chemical and Biological Engineering, Korea University, Anam-dong, Sungbuk-gu, Seoul 136-713 (Korea, Republic of); Koo, Yong Hwan; Kim, Byungnam; Lee, Byung Cheol [Radiation Integrated System Research Division, Korea Atomic Energy Research Institute (KAERI), Daejeon 305-353 (Korea, Republic of); Kim, Donghwan [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

    2014-08-25

    We demonstrate the close-spaced sublimation growth of polycrystalline cadmium telluride (CdTe) thin films on a flexible graphene electrode/thin glass substrate structure. Prior to the growth of CdTe films, chemical-vapor-deposited graphene was transferred onto a flexible glass substrate and subjected to electron-beam irradiation at an energy of 0.2?MeV in order to intentionally introduce the defects into it in a controlled manner. Micro-Raman spectroscopy and sheet resistance measurements were employed to monitor the damage and disorder in the electron-beam irradiated graphene layers. The morphology and optical properties of the CdTe thin films deposited on a graphene/flexible glass substrate were systematically characterized. The integration of the defective graphene layers with a flexible glass substrate can be a useful platform to grow various thin-film structures for flexible electronic and optoelectronic devices.

  2. p-type conduction from Sb-doped ZnO thin films grown by dual ion beam sputtering in the absence of oxygen ambient

    SciTech Connect (OSTI)

    Kumar Pandey, Sushil; Kumar Pandey, Saurabh; Awasthi, Vishnu; Kumar, Ashish; Mukherjee, Shaibal; Deshpande, Uday P.; Gupta, Mukul

    2013-10-28

    Sb-doped ZnO (SZO) thin films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system in the absence of oxygen ambient. The electrical, structural, morphological, and elemental properties of SZO thin films were studied for films grown at different substrate temperatures ranging from 200 °C to 600 °C and then annealed in situ at 800 °C under vacuum (pressure ?5 × 10{sup ?8} mbar). Films grown for temperature range of 200–500 °C showed p-type conduction with hole concentration of 1.374 × 10{sup 16} to 5.538 × 10{sup 16} cm{sup ?3}, resistivity of 66.733–12.758 ? cm, and carrier mobility of 4.964–8.846 cm{sup 2} V{sup ?1} s{sup ?1} at room temperature. However, the film grown at 600 °C showed n-type behavior. Additionally, current-voltage (I–V) characteristic of p-ZnO/n-Si heterojunction showed a diode-like behavior, and that further confirmed the p-type conduction in ZnO by Sb doping. X-ray diffraction measurements showed that all SZO films had (002) preferred crystal orientation. X-ray photoelectron spectroscopy analysis confirmed the formation of Sb{sub Zn}–2V{sub Zn} complex caused acceptor-like behavior in SZO films.

  3. Low-temperature grown graphene films by using molecular beam epitaxy

    SciTech Connect (OSTI)

    Lin, Meng-Yu [Institute of Electronics, National Taiwan University, Taipei, Taiwan (China); Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Guo, Wei-Ching; Wang, Pro-Yao [Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung, Taiwan (China); Wu, Meng-Hsun [College of Photonics, National Chiao-Tung University, Tainan, Taiwan (China); Liu, Te-Huan; Chang, Chien-Cheng [Institute of Applied Mechanics, National Taiwan University, Taipei, Taiwan (China); Pao, Chun-Wei; Lin, Shih-Yen [Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei, Taiwan (China); Lee, Si-Chen [Institute of Electronics, National Taiwan University, Taipei, Taiwan (China)

    2012-11-26

    Complete graphene film is prepared by depositing carbon atoms directly on Cu foils in a molecular beam epitaxy chamber at 300 Degree-Sign C. The Raman spectrum of the film has indicated that high-quality few-layer graphene is obtained. With back-gated transistor architecture, the characteristic current modulation of graphene transistors is observed. Following the similar growth procedure, graphitization is observed at room temperature, which is consistent with the molecular dynamics simulations of graphene growth.

  4. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  5. Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer

    SciTech Connect (OSTI)

    Pecz, B.; El-Shaer, A.; Bakin, A.; Mofor, A.-C.; Waag, A.; Stoemenos, J. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, D-38106 Braunschweig (Germany); Physics Department, Aristotle University, University Campus, 54006 Thessaloniki (Greece)

    2006-11-15

    The structural characteristics of the ZnO film grown on sapphire substrate using a thin MgO buffer layer were studied using transmission electron microscopy and high-resolution x-ray diffraction. The growth was carried out in a modified plasma-molecular beam epitaxy system. The observed misfit dislocations were well confined at the sapphire overgrown interface exhibiting domain matching epitaxy, where the integral multiples of lattice constants match across the interface. The main extended defects in the ZnO film were the threading dislocations having a mean density of 4x10{sup 9} cm{sup -2}. The formation of the MgO buffer layer as well as the ZnO growth were monitored in situ by reflection high-energy electron diffraction. The very thin {approx}1 nm, MgO buffer layer can partially interdiffuse with the ZnO as well as react with the Al{sub 2}O{sub 3} substrate forming an intermediate epitaxial layer having the spinel (MgO/Al{sub 2}O{sub 3}) structure.

  6. Grain size dependent mechanical properties of nanocrystalline diamond films grown by hot-filament CVD

    SciTech Connect (OSTI)

    Wiora, M; Bruehne, K; Floeter, A; Gluche, P; Willey, T M; Kucheyev, S O; Van Buuren, A W; Hamza, A V; Biener, J; Fecht, H

    2008-08-01

    Nanocrystalline diamond (NCD) films with a thickness of {approx}6 {micro}m and with average grain sizes ranging from 60 to 9 nm were deposited on silicon wafers using a hot-filament chemical vapor deposition (HFCVD) process. These samples were then characterized with the goal to identify correlations between grain size, chemical composition and mechanical properties. The characterization reveals that our films are phase pure and exhibit a relatively smooth surface morphology. The levels of sp{sup 2}-bonded carbon and hydrogen impurities are low, and showed a systematic variation with the grain size. The hydrogen content increases with decreasing grain size, whereas the sp{sup 2} carbon content decreases with decreasing grain size. The material is weaker than single crystalline diamond, and both stiffness and hardness decrease with decreasing grain size. These trends suggest gradual changes of the nature of the grain boundaries, from graphitic in the case of the 60 nm grain size material to hydrogen terminated sp{sup 3} carbon for the 9 nm grain size material. The films exhibit low levels of internal stress and freestanding structures with a length of several centimeters could be fabricated without noticeable bending.

  7. Influence of growth temperature on electrical, optical, and plasmonic properties of aluminum:zinc oxide films grown by radio frequency magnetron sputtering

    SciTech Connect (OSTI)

    Dondapati, Hareesh; Santiago, Kevin; Pradhan, A. K.

    2013-10-14

    We have investigated the responsible mechanism for the observation of metallic conductivity at room temperature and metal-semiconductor transition (MST) at lower temperatures for aluminum-doped zinc oxide (AZO) films. AZO films were grown on glass substrates by radio-frequency magnetron sputtering with varying substrate temperatures (T{sub s}). The films were found to be crystalline with the electrical resistivity close to 1.1 × 10{sup ?3} ? cm and transmittance more than 85% in the visible region. The saturated optical band gap of 3.76 eV was observed for the sample grown at T{sub s} of 400 °C, however, a slight decrease in the bandgap was noticed above 400 °C, which can be explained by Burstein–Moss effect. Temperature dependent resistivity measurements of these highly conducting and transparent films showed a MST at ?110 K. The observed metal-like and metal-semiconductor transitions are explained by taking into account the Mott phase transition and localization effects due to defects. All AZO films demonstrate crossover in permittivity from positive to negative and low loss in the near-infrared region, illustrating its applications for plasmonic metamaterials, including waveguides for near infrared telecommunication region. Based on the results presented in this study, the low electrical resistivity and high optical transmittance of AZO films suggested a possibility for the application in the flexible electronic devices, such as transparent conducting oxide film on LEDs, solar cells, and touch panels.

  8. Spectral behavior of the optical constants in the visible/near infrared of GeSbSe chalcogenide thin films grown at glancing angle

    SciTech Connect (OSTI)

    Martin-Palma, R. J.; Ryan, Joseph V.; Pantano, C. G.

    2007-04-23

    GeSbSe chalcogenide thin films were deposited using glancing angle deposition onto transparent glass substrates for the determination of the spectral behavior of the optical constants (index of refraction n and extinction coefficient k) in the visible and near infrared ranges (400-2500 nm) as a function of the deposition angle. Computational simulations based on the matrix method were employed to determine the values of the optical constants of the different films from the experimental reflectance and transmittance spectra. A significant dependence of the overall optical behavior on the deposition angle is found. Furthermore, the band gap of the GeSbSe thin films was calculated. The accurate determination of the optical constants of films grown at glancing angle will enable the development of sculptured thin film fiber-optic chemical sensors and biosensors.

  9. Inversion of wurtzite GaN(0001) by exposure to V. Ramachandran and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    in the growth rate of GaN on different crystallographic planes [8], pointing to a surfactant effect of Mg on Ga in these films and the carrier concentration was therefore very low [1,2]; dopant activa- tion can be achieved of Mg at GaN growth temperatures is an issue and dopant in- corporation may be rather inefficient [5

  10. Reactor design for uniform chemical vapor deposition-grown films without substrate rotation

    DOE Patents [OSTI]

    Wanlass, M.

    1985-02-19

    A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.

  11. Co{sub 2}FeAl Heusler thin films grown on Si and MgO substrates: Annealing temperature effect

    SciTech Connect (OSTI)

    Belmeguenai, M. Tuzcuoglu, H.; Zighem, F.; Chérif, S. M.; Moch, P.; Gabor, M. S. Petrisor, T.; Tiusan, C.

    2014-01-28

    10?nm and 50?nm Co{sub 2}FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to CFA(001)[110]//MgO(001)[100] epitaxial relation) for CFA films grown on a Si and on a MgO substrate, respectively. For these later, the chemical order varies from the A2 phase to the B2 phase when increasing the annealing temperature (T{sub a}), while only the A2 disorder type has been observed for CFA grown on Si. Microstrip ferromagnetic resonance (MS-FMR) measurements revealed that the in-plane anisotropy results from the superposition of a uniaxial and a fourfold symmetry term for CFA grown on MgO substrates. This fourfold anisotropy, which disappears completely for samples grown on Si, is in accord with the crystal structure of the samples. The fourfold anisotropy field decreases when increasing T{sub a}, while the uniaxial anisotropy field is nearly unaffected by T{sub a} within the investigated range. The MS-FMR data also allow for concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with T{sub a}. Finally, the FMR linewidth decreases when increasing T{sub a}, due to the enhancement of the chemical order. We derive a very low intrinsic damping parameter (1.1×10{sup ?3} and 1.3×10{sup ?3} for films of 50?nm thickness annealed at 615?°C grown on MgO and on Si, respectively)

  12. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 × emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 × 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  13. Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments

    SciTech Connect (OSTI)

    Novikov, P. L.; Le Donne, A.; Cereda, S.; Miglio, Leo; Pizzini, S.; Binetti, S.; Montalenti, F. [Dipartimento di Scienza dei Materiali and L-NESS, Universita di Milano-Bicocca, Via Cozzi 53, 20125 Milan (Italy); Rondanini, M.; Cavallotti, C. [Dipartimento di Chimica, Materiali, e Ingegneria Chimica 'G. Natta', Politecnico di Milano, Via Mancinelli 7, 20131 Milan (Italy); Chrastina, D.; Moiseev, T.; Kaenel, H. von; Isella, G. [Dipartimento di Fisica and L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy)

    2009-02-02

    A joint theoretical and experimental analysis of the crystalline fraction in nanocrystalline films grown by low-energy plasma enhanced chemical vapor deposition is presented. The effect of key growth parameters such as temperature, silane flux, and hydrogen dilution ratio is analyzed and modeled at the atomic scale, introducing an environment-dependent crystallization probability. A very good agreement between experiments and theory is found, despite the use of a single fitting parameter.

  14. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  15. Growth temperature effect on the structural and magnetic properties of Fe{sub 3}O{sub 4} films grown by the self-template method

    SciTech Connect (OSTI)

    Takahashi, R. Misumi, H.; Lippmaa, M.

    2014-07-21

    We have investigated the effect of growth temperature on the structure, surface morphology, and magnetic properties of Fe{sub 3}O{sub 4} thin films grown on SrTiO{sub 3}(001) substrates by a self-template method. To eliminate the intermixing of (001) and (111) orientations that usually occurs in spinel films grown on perovskite substrates, a thin self-template layer of (001)-oriented Fe{sub 3}O{sub 4} was deposited on a SrTiO{sub 3}(001) substrate at 400?°C prior to the main film growth at temperatures of up to 1100?°C. Increasing the growth temperature from 400?°C to 1100?°C resulted in greatly improved crystallinity of the Fe{sub 3}O{sub 4} thin films, with the rocking curve width dropping from 1.41° to 0.28°. Surface analysis by atomic force microscopy showed that raising the growth temperature increased the grain size and the surface roughness, ultimately leading to the formation of regular nanopyramid arrays at 1100?°C. The surface roughening and pyramid formation are caused by the dominance of the lowest surface energy spinel (111) crystal facet. The nanopyramids were fully relaxed but still perfectly (001)-oriented in the out-of-plane direction. The largest pyramids had the lowest coercivity due to a reduction of the demagnetization effect.

  16. Direct band gap optical emission from compressively strained Ge films grown on relaxed Si{sub 0.5}Ge{sub 0.5} substrate

    SciTech Connect (OSTI)

    Aluguri, R.; Manna, S.; Ray, S. K. [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)] [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)

    2013-10-14

    Compressively strained Ge films have been grown on relaxed Si{sub 0.5}Ge{sub 0.5} virtual substrate in ultra high vacuum using molecular beam epitaxy. Structural characterization has shown that the Ge films are compressively strained with partial strain relaxation in a film thicker than 3.0 nm, due to onset of island nucleation. Photoluminescence spectra exhibit the splitting of degenerate Ge valence band into heavy hole and light hole bands with a broad direct band gap emission peak around 0.81 eV. Temperature and excitation power dependent emission characteristics have been studied to investigate the mechanism of luminescence quenching at high temperatures and the role of non-radiative recombination centers.

  17. Properties of molecular beam epitaxy grown Eu{sub x}(transition metal){sub y} films (transition metals: Mn, Cr)

    SciTech Connect (OSTI)

    Balin, K.; Nowak, A.; Gibaud, A.; Szade, J.; Celinski, Z.

    2011-04-01

    The electronic and crystallographic structures, as well as the magnetic properties, of Eu{sub x}(transition metal){sub y} (transition metals: Mn, Cr) thin films grown by molecular beam epitaxy were studied. Relative changes of the Eu/Mn and Eu/Cr ratios derived from the XPS lines, as well as x-ray reflectivity, indicate mixing of the Eu/Mn and Eu/Cr layers. Valency transitions from Eu{sup 2+} to Eu{sup 3+} were observed in both systems for most studied stoichiometries. A transition to a magnetically ordered phase was observed at 15 K, 40 K, and 62 K for selected films in the Eu-Mn system, and at 50 K for the film with a Eu/Cr ratio of 0.5.

  18. Structural characterization of metastable hcp-Ni thin films epitaxially grown on Au(100) single-crystal underlayers

    SciTech Connect (OSTI)

    Ohtake, Mitsuru; Tanaka, Takahiro; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-05-15

    Ni(1120) epitaxial thin films with hcp structure were prepared on Au(100) single-crystal underlayers at 100 deg. C by ultra high vacuum molecular beam epitaxy. The detailed film structure is studied by in situ reflection high energy electron diffraction, x-ray diffraction, and transmission electron microscopy. The hcp-Ni film consists of two types of variants whose c-axes are rotated around the film normal by 90 deg. each other. An atomically sharp boundary is recognized between the film and the underlayer, where misfit dislocations are introduced. Presence of such dislocations seems to relieve the strain caused by the lattice mismatch between the film and the underlayer.

  19. Influence of oxygen pressure and aging on LaAlO{sub 3} films grown by pulsed laser deposition on SrTiO{sub 3} substrates

    SciTech Connect (OSTI)

    Park, Jihwey; Aeppli, Gabriel [London Centre for Nanotechnology, University College London, London WC1H 0AH (United Kingdom); Soh, Yeong-Ah, E-mail: yeongahsoh@gmail.com [London Centre for Nanotechnology, University College London, London WC1H 0AH (United Kingdom); Department of Materials, Imperial College London, London SW7 2AZ (United Kingdom); David, Adrian; Lin, Weinan [Division of Physics and Applied Physics, Nanyang Technological University, Singapore 637371 (Singapore); Wu, Tom [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900 (Saudi Arabia)

    2014-02-24

    The crystal structures of LaAlO{sub 3} films grown by pulsed laser deposition on SrTiO{sub 3} substrates at oxygen pressure of 10{sup ?3} millibars or 10{sup ?5} millibars, where kinetics of ablated species hardly depend on oxygen background pressure, are compared. Our results show that the interface between LaAlO{sub 3} and SrTiO{sub 3} is sharper when the oxygen pressure is lower. Over time, the formation of various crystalline phases is observed while the crystalline thickness of the LaAlO{sub 3} layer remains unchanged. X-ray scattering as well as atomic force microscopy measurements indicate three-dimensional growth of such phases, which appear to be fed from an amorphous capping layer present in as-grown samples.

  20. Element-specific study of epitaxial NiO/Ag/CoO/Fe films grown on vicinal Ag(001) using photoemission electron microscopy

    SciTech Connect (OSTI)

    Meng, Y.; Li, J.; Tan, A.; Jin, E.; Son, J.; Park, J. S.; Doran, A.; Young, A. T.; Scholl, A.; Arenholz, E.; Wu, J.; Hwang, C.; Zhao, H. W.; Qiu, Z. Q.

    2011-01-10

    NiO/Ag/CoO/Fe single crystalline films are grown epitaxially on a vicinal Ag(001) substrate using molecular beam epitaxy and investigated by photoemission electron microscopy. We find that after zero-field cooling, the in-plane Fe magnetization switches from parallel to perpendicular direction of the atomic steps of the vicinal surface at thinner CoO thickness but remains in its original direction parallel to the steps at thicker CoO thickness. CoO and NiO domain imaging result shows that both CoO/Fe and NiO/CoO spins are perpendicularly coupled, suggesting that the Fe magnetization switching may be associated with the rotatable-frozen spin transition of the CoO film.

  1. Enlarged Mn 3s splitting and room-temperature ferromagnetism in epitaxially grown oxygen doped Mn{sub 2}N{sub 0.86} films

    SciTech Connect (OSTI)

    Meng, M.; Wu, S. X. Ren, L. Z.; Zhou, W. Q.; Wang, Y. J.; Wang, G. L.; Li, S. W.

    2014-11-07

    Single-phase and oxygen doped Mn{sub 2}N{sub 0.86} thin films have been grown on MgO (111) by plasma-assisted molecular beam epitaxy. The films grow under tensile strain and, remarkably, they show ferromagnetic-like interactions at low temperature and ferromagnetic ordering agreed well with the Bloch-law T{sup 3/2} at room-temperature. We further demonstrate the enlarged Mn 3s splitting (6.46?eV) and its possible relation to the observed ferromagnetism. Our study not only provide a strategy for further theoretical work on oxygen doped manganese nitrides, but also shed promising light on utilizing its room-temperature FM property to fabricate spintronic devices.

  2. The relationship between depth-resolved composition and strain relaxation in InAlN and InGaN films grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Jiao, Wenyuan; Kong, Wei; Li, Jincheng; Kim, Tong-Ho; Brown, April S. [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States)] [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States); Collar, Kristen [Department of Physics, Duke University, Durham, North Carolina 27708 (United States)] [Department of Physics, Duke University, Durham, North Carolina 27708 (United States)

    2013-10-14

    A study of the relationship between strain and the incorporation of group III elements in ternary InGaN and InAlN grown by molecular beam epitaxy is reported. Using X-ray Photoelectron Spectroscopy compositional depth profiles with x-ray diffraction, we are able to find a clear relationship between strain and In incorporation including tensile-strained InAlN which has, to date, not been studied. The results show that fully strained films contain homogeneous indium composition while partially relaxed films have a non-homogeneous indium composition with depth. These results can be interpreted by considering the impurity formation energies of indium in host lattices.

  3. Microstructure of Co/X (X=Cu,Ag,Au) epitaxial thin films grown on Al{sub 2}O{sub 3}(0001) substrates

    SciTech Connect (OSTI)

    Ohtake, Mitsuru; Akita, Yuta; Futamoto, Masaaki; Kirino, Fumiyoshi

    2007-05-01

    Epitaxial thin films of Co/X (X=Cu,Ag,Au) were prepared on Al{sub 2}O{sub 3}(0001) substrates at substrate temperatures of 100 and 300 degree sign C by UHV molecular beam epitaxy. A complicated microstructure was realized for the epitaxial thin films. In-situ reflection high-energy electron diffraction observation has shown that X atoms of the buffer layer segregated to the surface during Co layer deposition, and it yielded a unique epitaxial granular structure. The structure consists of small Co grains buried in the X buffer layer, where both the magnetic small Co grains and the nonmagnetic X layer are epitaxially grown on the single crystal substrate. The structure varied depending on the X element and the substrate temperature. The crystal structure of Co grains is influenced by the buffer layer material and determined to be hcp and fcc structures for the buffer layer materials of Au and Cu, respectively.

  4. Epitaxial properties of Al-doped ZnO thin films grown by pulsed laser deposition on SrTiO{sub 3}(001)

    SciTech Connect (OSTI)

    Karger, M.; Schilling, M. [Technische Universitaet Braunschweig, Institut fuer Elektrische Messtechnik und Grundlagen der Elektrotechnik, Hans-Sommer-Strasse 66, D-38106 Braunschweig (Germany)

    2005-02-15

    Undoped and Al-doped ZnO films with dopant concentrations of nominally 1% and 10% and a thickness of 100 nm have been grown on SrTiO{sub 3}(001) by pulsed laser deposition at substrate temperatures between 650 deg. C and 820 deg. C. The epitaxial conditions were examined with high pressure in-situ reflection high energy electron diffraction (RHEED) and ex-situ x-ray diffraction (XRD) measurements in different geometries. The films are highly (1120)-oriented with a lattice mismatch between the SrTiO{sub 3}[110] direction and the c-axis of about 3%. Atomic force microscopy (AFM) revealed smooth surfaces with a roughness of d{sub rms}<5 nm and different sized islands.

  5. Comparative study of zinc oxide and aluminum doped zinc oxide transparent thin films grown by direct current magnetron sputtering

    E-Print Network [OSTI]

    using direct current (dc) magnetron sputtering from pure metallic Zn and ceramic ZnO targets, as well of target composition on the film's surface topology, crystallinity, and optical transmission have been transmission and energy gap (Eg) of the metallic than of the ceramic target prepared films. © 2006 Elsevier B

  6. Structure and composition of zirconium carbide thin-film grown by ion beam sputtering for optical applications

    SciTech Connect (OSTI)

    Singh, Amol, E-mail: modimh@rrcat.gov.in; Modi, Mohammed H., E-mail: modimh@rrcat.gov.in; Dhawan, Rajnish, E-mail: modimh@rrcat.gov.in; Lodha, G. S., E-mail: modimh@rrcat.gov.in [X-ray Optics Section, ISU Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India)

    2014-04-24

    Thin film of compound material ZrC was deposited on Si (100) wafer using ion beam sputtering method. The deposition was carried out at room temperature and at base pressure of 3×10{sup ?5} Pa. X-ray photoelectron spectroscopy (XPS) measurements were performed for determining the surface chemical compositions. Grazing incidence x-ray reflectivity (GIXRR) measurements were performed to study the film thickness, roughness and density. From GIXRR curve roughness value of the film was found less than 1 nm indicating smooth surface morphology. Films density was found 6.51 g/cm{sup 3}, which is close to bulk density. Atomic force microscopy (AFM) measurements were performed to check the surface morphology. AFM investigation showed that the film surface is smooth, which corroborate the GIXRR data. Figure 2 of the original article PDF file, as supplied to AIP Publishing, contained a PDF processing error. This article was updated on 12 May 2014 to correct that error.

  7. Microstructure and magnetic properties of FeCo epitaxial thin films grown on MgO single-crystal substrates

    SciTech Connect (OSTI)

    Shikada, Kouhei; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-04-01

    FeCo epitaxial films were prepared on MgO(100), MgO(110), and MgO(111) substrates by ultrahigh vacuum molecular beam epitaxy. FeCo thin films with (100), (211), and (110) planes parallel to the substrate surface grow on respective MgO substrates. FeCo/MgO interface structures are studied by high-resolution cross-sectional transmission electron microscopy and the epitaxial growth mechanism is discussed. Atomically sharp boundaries are recognized between the FeCo thin films and the MgO substrates where misfit dislocations are introduced in the FeCo thin films presumably to decrease the lattice misfits. Misfit dislocations are observed approximately every 9 and 1.4 nm in FeCo thin film at the FeCo/MgO(100) and the FeCo/MgO(110) interfaces, respectively. X-ray diffraction analysis indicates that the lattice spacing measured parallel to the single-crystal substrate surfaces are in agreement within 0.1% with those of the respective bulk values of Fe{sub 50}Co{sub 50} alloy crystal, showing that the FeCo film strain is very small. The magnetic anisotropies of these epitaxial films basically reflect the magnetocrystalline anisotropy of bulk FeCo alloy crystal.

  8. Influence of dosing sequence and film thickness on structure and resistivity of Al-ZnO films grown by atomic layer deposition

    SciTech Connect (OSTI)

    Pollock, Evan B. Lad, Robert J.

    2014-07-01

    Aluminum-doped zinc oxide (AZO) films were deposited onto amorphous silica substrates using an atomic layer deposition process with diethyl zinc (DEZ), trimethyl aluminum (TMA), and deionized water at 200?°C. Three different Al doping sequences were used at a ZnO:Al ratio of 11:1 within the films. A minimum film resistivity of 1.6?×?10{sup ?3}?? cm was produced using sequential dosing of DEZ, TMA, DEZ, followed by H{sub 2}O for the Al doping step. This “ZAZW” sequence yielded an AZO film resistivity that is independent of film thickness, crystallographic texture, and grain size, as determined by high resolution x-ray diffraction (XRD). A pseudo-Voigt analysis method yields values for grain sizes that are smaller than those calculated using other XRD methods. Anisotropic grain sizes or variations in crystallographic texture have minimal influence on film resistivity, which suggests that factors other than film texture, such as intragrain scattering, may be important in influencing film resistivity.

  9. Control of morphology for enhanced electronic transport in PECVD-grown a-Si : H Thin Films

    E-Print Network [OSTI]

    Castro Galnares, Sebastián

    2010-01-01

    Solar cells have become an increasingly viable alternative to traditional, pollution causing power generation methods. Although crystalline silicon (c-Si) modules make up most of the market, thin films such as hydrogenated ...

  10. Preparation and structure characterization of SmCo{sub 5}(0001) epitaxial thin films grown on Cu(111) underlayers

    SciTech Connect (OSTI)

    Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

    2009-04-01

    SmCo{sub 5}(0001) epitaxial films were prepared on Cu(111) single-crystal underlayers formed on Al{sub 2}O{sub 3}(0001) substrates at 500 deg. C. The nucleation and growth mechanism of (0001)-oriented SmCo{sub 5} crystal on Cu(111) underlayer is investigated and a method to control the nucleation is proposed. The SmCo{sub 5} epitaxial thin film formed directly on Cu underlayer consists of two types of domains whose orientations are rotated around the film normal by 30 deg. each other. By introducing a thin Co seed layer on the Cu underlayer, a SmCo{sub 5}(0001) single-crystal thin film is successfully obtained. Nucleation of SmCo{sub 5} crystal on Cu underlayer seems controllable by varying the interaction between the Cu underlayer and the SmCo{sub 5} layer.

  11. Properties of H, O and C in GaN

    SciTech Connect (OSTI)

    Pearton, S.J.; Abernathy, C.R.; Lee, J.W.

    1996-04-01

    The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

  12. Effect of Ag addition to L1{sub 0} FePt and L1{sub 0} FePd films grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Tokuoka, Y.; Seto, Y.; Kato, T.; Iwata, S.

    2014-05-07

    L1{sub 0} ordered FePt-Ag (5?nm) and FePd-Ag (5?nm) films were grown on MgO (001) substrate at temperatures of 250–400?°C by using molecular beam epitaxy method, and their crystal and surface structures, perpendicular magnetic anisotropies and Curie temperatures were investigated. In the case of FePt-Ag, Ag addition with the amount of 10–20 at.?% was effective to promote L1{sub 0} ordering and granular growth, resulting in the increase of the perpendicular magnetic anisotropy and coercivity of the FePt-Ag films. On the other hand, in the case of FePd-Ag, Ag addition changed the surface morphology from island to continuous film associated with the reductions of its coercivity and perpendicular anisotropy. The variations of lattice constants and Curie temperature with Ag addition were significantly different between FePt-Ag and FePd-Ag. For FePd-Ag, the c and a axes lattice spacings and Curie temperature gradually changed with increasing Ag content, while they unchanged for FePt-Ag. These results suggest the possibility of the formation of FePdAg alloy in FePd-Ag, while Ag segregation in FePt-Ag.

  13. Structural controlled magnetic anisotropy in Heusler L1{sub 0}-MnGa epitaxial thin films

    SciTech Connect (OSTI)

    Wang Kangkang; Lu Erdong; Smith, Arthur R.; Knepper, Jacob W.; Yang Fengyuan

    2011-04-18

    Ferromagnetic L1{sub 0}-MnGa thin films have been epitaxially grown on GaN, sapphire, and MgO substrates using molecular beam epitaxy. Using diffraction techniques, the epitaxial relationships are determined. It is found that the crystalline orientation of the films differ due to the influence of the substrate. By comparing the magnetic anisotropy to the structural properties, a clear correlation could be established indicating that the in-plane and out-of-plane anisotropy is directly determined by the crystal orientation of the film and could be controlled via selection of the substrates. This result could be helpful in tailoring magnetic anisotropy in thin films for spintronic applications.

  14. Transmittance from visible to mid infra-red in AZO films grown by atomic layer deposition system

    E-Print Network [OSTI]

    Tanner, David B.

    for solar cells, flat panel displays, LCD electrodes, touch panel transparent contacts and IR win- dows Westgate a , D.I. Koukis b , D.J. Arenas c , D.B. Tanner b a Center for Autonomous Solar Power, Binghamton found applications in thin film photovoltaics such as CdTe and CIGS based solar cells (Dhere et al

  15. High spin polarization at room temperature in Ge-substituted Fe{sub 3}O{sub 4} epitaxial thin film grown under high oxygen pressure

    SciTech Connect (OSTI)

    Seki, Munetoshi, E-mail: m-seki@ee.t.u-tokyo.ac.jp; Takahashi, Masanao; Ohshima, Toshiyuki; Yamahara, Hiroyasu; Tabata, Hitoshi [Department of Electrical Engineering and Information Systems, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)] [Department of Electrical Engineering and Information Systems, Graduate School of Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2013-11-18

    Epitaxial thin films of room-temperature ferrimagnetic (Fe,Ge){sub 3}O{sub 4} were fabricated using pulsed laser deposition. Films with a single-phase spinel structure were grown under high oxygen pressures (0.01–0.6?Pa). The carrier transport across (Fe,Ge){sub 3}O{sub 4}/Nb:SrTiO{sub 3} interface was studied to estimate the spin polarization of (Fe, Ge){sub 3}O{sub 4}. Current–voltage curves of Fe{sub 2.8}Ge{sub 0.2}O{sub 4}/Nb:SrTiO{sub 3} junction showed rectifying behavior even at 300?K whereas Fe{sub 3}O{sub 4}/Nb:SrTiO{sub 3} junction showed ohmic behavior. Calculations based on a model for a Schottky contact with a ferromagnetic component yielded a spin polarization of 0.50 at 300?K for Fe{sub 2.8}Ge{sub 0.2}O{sub 4}, indicating its potential as a promising spin injector.

  16. Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy

    SciTech Connect (OSTI)

    Chen, Yen-Ting [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China) [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China); Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden); Araki, Tsutomu [Department of Electrical and Electronic Engineering, Ritsumeikan University, 525-8577 Shiga (Japan)] [Department of Electrical and Electronic Engineering, Ritsumeikan University, 525-8577 Shiga (Japan); Palisaitis, Justinas; Persson, Per O. Å.; Olof Holtz, Per; Birch, Jens [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden)] [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden); Chen, Li-Chyong [Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan (China)] [Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan (China); Chen, Kuei-Hsien [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China) [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China); Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan (China); Nanishi, Yasushi [Global Innovation Research Organization, Ritsumeikan University, 525-8577 Shiga (Japan)] [Global Innovation Research Organization, Ritsumeikan University, 525-8577 Shiga (Japan)

    2013-11-11

    Nucleation mechanism of catalyst-free GaN nanorod grown on Si(111) is investigated by the fabrication of uniform and narrow (<35 nm) nanorods without a pre-defined mask by molecular beam epitaxy. Direct evidences show that the nucleation of GaN nanorods stems from the sidewall of the underlying islands down to the Si(111) substrate, different from commonly reported ones on top of the island directly. Accordingly, the growth and density control of the nanorods is exploited by a “narrow-pass” approach that only narrow nanorod can be grown. The optimal size of surrounding non-nucleation area around single nanorod is estimated as 88 nm.

  17. Epitaxial single-crystal thin films of MnxTi1-xO2-? grown on (rutile)TiO2 substrates with pulsed laser deposition: Experiment and theory

    SciTech Connect (OSTI)

    Ilton, Eugene S.; Droubay, Timothy C.; Chaka, Anne M.; Kovarik, Libor; Varga, Tamas; Arey, Bruce W.; Kerisit, Sebastien N.

    2015-02-01

    Epitaxial rutile-structured single-crystal MnxTi1-xO2-? films were synthesized on rutile- (110) and -(001) substrates using pulsed laser deposition. The films were characterized by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and aberration-corrected transmission electron microscopy (ACTEM). Under the present conditions, 400oC and PO2 = 20 mTorr, single crystal epitaxial thin films were grown for x = 0.13, where x is the nominal average mole fraction of Mn. In fact, arbitrarily thick films could be grown with near invariant Mn/Ti concentration profiles from the substrate/film interface to the film surface. In contrast, at x = 0.25, Mn became enriched towards the surface and a secondary nano-scale phase formed which appeared to maintain the basic rutile structure but with enhanced z-contrast in the tunnels, or tetrahedral interstitial sites. Ab initio thermodynamic calculations provided quantitative estimates for the destabilizing effect of expanding the ?-MnO2 lattice parameters to those of TiO2-rutile, the stabilizing effect of diluting Mn with increasing Ti concentration, and competing reaction pathways.

  18. Development of an IR-transparent, inverted-grown, thin-film, Al[sub 0. 34]Ga[sub 0. 66]As/GaAs cascade solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R.; Timmons, M.L.; Sharps, P.R.; Colpitts, T.S.; Hills, J.S.; Hancock, J.; Hutchby, J.A. )

    1992-12-01

    Inverted growth and the development of associated cell processing, are likely to offer a significant degree of freedom for improving the performance of many III-V multijunction cascades and open new avenues for advanced multijunction concepts. This is especially true for the development of high-efficiency Al[sub 0.37]Ga[sub 0.63]As/GaAs cascades where the high growth temperatures required for the AlGaAs top cell growth can cause the deterioration of the tunnel junction interconnect. In the approach of inverted-grown AlGaAs/GaAs cascade cells, the AlGaAs top cell is grown first at 780 [degree]C and the GaAs tunnel junction and bottom cell are grown at 675 [degree]C. After the inverted growth, the AlGaAs/GaAs cascade structure is selectively removed from the parent substrate. The feasibility of inverted growth is demonstrated by a fully-processed, inverted-grown, thin film GaAs cell with a 1-sun AM1.5 efficiency of 20.3%. Also, an inverted-grown, thin-film, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiencies of 19.9% and 21% at 1-sun and 7-suns, respectively, has been obtained.

  19. Continuous ultra-thin MoS{sub 2} films grown by low-temperature physical vapor deposition

    SciTech Connect (OSTI)

    Muratore, C. [Department of Chemical and Materials Engineering, University of Dayton, Dayton, Ohio 45469 (United States); Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States); Hu, J. J.; Bultman, J. E.; Jespersen, M. L. [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States); University of Dayton Research Institute, Dayton, Ohio 45469 (United States); Wang, B.; Haque, M. A. [Department of Mechanical and Nuclear Engineering, Pennsylvania State University, College Park, Pennsylvania 16802 (United States); Shamberger, P. J.; McConney, M. E.; Naguy, R. D.; Voevodin, A. A. [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States)

    2014-06-30

    Uniform growth of pristine two dimensional (2D) materials over large areas at lower temperatures without sacrifice of their unique physical properties is a critical pre-requisite for seamless integration of next-generation van der Waals heterostructures into functional devices. This Letter describes a vapor phase growth technique for precisely controlled synthesis of continuous, uniform molecular layers of MoS{sub 2} on silicon dioxide and highly oriented pyrolitic graphite substrates of over several square centimeters at 350?°C. Synthesis of few-layer MoS{sub 2} in this ultra-high vacuum physical vapor deposition process yields materials with key optical and electronic properties identical to exfoliated layers. The films are composed of nano-scale domains with strong chemical binding between domain boundaries, allowing lift-off from the substrate and electronic transport measurements from contacts with separation on the order of centimeters.

  20. Ultra-narrow ferromagnetic resonance in organic-based thin films grown via low temperature chemical vapor deposition

    SciTech Connect (OSTI)

    Yu, H.; Harberts, M.; Adur, R.; Hammel, P. Chris; Johnston-Halperin, E., E-mail: ejh@physics.osu.edu, E-mail: epstein@physics.osu.edu [Department of Physics, The Ohio State University, Columbus, Ohio 43210-1117 (United States); Lu, Y. [Department of Chemistry, The Ohio State University, Columbus, Ohio 43210-1173 (United States); Epstein, A. J., E-mail: ejh@physics.osu.edu, E-mail: epstein@physics.osu.edu [Department of Physics, The Ohio State University, Columbus, Ohio 43210-1117 (United States); Department of Chemistry, The Ohio State University, Columbus, Ohio 43210-1173 (United States)

    2014-07-07

    We present the growth of thin films of the organic-based ferrimagnetic semiconductor V[TCNE]{sub x} (x???2, TCNE: tetracyanoethylene) via chemical vapor deposition. Under optimized growth conditions, we observe a significant increase in magnetic homogeneity, as evidenced by a Curie temperature above 600?K and sharp magnetization switching. Further, ferromagnetic resonance studies reveal a single resonance with full width at half maximum linewidth of 1.4?G, comparable to the narrowest lines measured in inorganic magnetic materials and in contrast to previous studies that showed multiple resonance features. These characteristics are promising for the development of high frequency electronic devices that take advantage of the unique properties of this organic-based material, such as the potential for low cost synthesis combined with low temperature and conformal deposition on a wide variety of substrates.

  1. Converse magnetoelectric coupling in NiFe/Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}–PbTiO{sub 3} nanocomposite thin films grown on Si substrates

    SciTech Connect (OSTI)

    Feng, Ming; Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000 ; Hu, Jiamian; Wang, Jianjun; Li, Zheng; Shu, Li; Nan, C. W.

    2013-11-04

    Multiferroic NiFe (?30 nm)/Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}–PbTiO{sub 3}(PMN–PT, ?220 nm) bilayered thin films were grown on common Pt/Ti/SiO{sub 2}/Si substrates by a combination of off-axis magnetron sputtering and sol-gel spin-coating technique. By using AC-mode magneto-optical Kerr effect technique, the change in the Kerr signal (magnetization) of the NiFe upon applying a low-frequency AC voltage to the PMN–PT film was in situ acquired at zero magnetic field. The obtained Kerr signal versus voltage loop essentially tracks the electromechanical strain curve of the PMN–PT thin film, clearly demonstrating a strain-mediated converse magnetoelectric coupling, i.e., voltage-modulated magnetization, in the NiFe/PMN–PT nanocomposite thin films.

  2. Influence of oxygen in architecting large scale nonpolar GaN nanowires

    E-Print Network [OSTI]

    Patsha, Avinash; Pandian, Ramanathaswamy; Dhara, S

    2015-01-01

    Manipulation of surface architecture of semiconducting nanowires with a control in surface polarity is one of the important objectives for nanowire based electronic and optoelectronic devices for commercialization. We report the growth of exceptionally high structural and optical quality nonpolar GaN nanowires with controlled and uniform surface morphology and size distribution, for large scale production. The role of O contamination (~1-10^5 ppm) in the surface architecture of these nanowires is investigated with the possible mechanism involved. Nonpolar GaN nanowires grown in O rich condition show the inhomogeneous surface morphologies and sizes (50 - 150 nm) while nanowires are having precise sizes of 40(5) nm and uniform surface morphology, for the samples grown in O reduced condition. Relative O contents are estimated using electron energy loss spectroscopy studies. Size-selective growth of uniform nanowires is also demonstrated, in the O reduced condition, using different catalyst sizes. Photoluminescen...

  3. K.K. Gan 1 Summary of Irradiation Activity

    E-Print Network [OSTI]

    Gan, K. K.

    K.K. Gan 1 Summary of Irradiation Activity September 22, 2010 K.K. Gan The Ohio State University with 300 MeV pions in August VCSEL/PIN Irradiation #12;K.K. Gan TWEPP2010 3 array VCSEL driver Chips Irradiation #12;K.K. Gan TWEPP2010 4 Infinicor SX+: participating institution: SMU

  4. Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Novikov, S. V.; Ting, M.; Yu, K. M.; Sarney, W. L.; Martin, R. W.; Svensson, S. P.; Walukiewicz, W.; Foxon, C. T.

    2014-10-01

    In this paper we report our study on n-type Te doping of amorphous GaN1-xAsx layers grown by plasma-assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaN1-xAsx layers has been successfully achieved with a maximum Te concentration of 9×10²? cm?³. Tellurium incorporation resulted in n-doping of GaN1-xAsx layers with Hall carrier concentrations up to 3×10¹? cm?³ and mobilities of ~1 cm²/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaN1-xAsx layers has been determined.

  5. Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

    SciTech Connect (OSTI)

    Verma, Jai; Kandaswamy, Prem Kumar; Protasenko, Vladimir; Verma, Amit; Grace Xing, Huili; Jena, Debdeep

    2013-01-28

    We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve tunnel injection, relatively low composition AlGaN is used for n- and p-type layers to simultaneously take advantage of effective band alignment and efficient doping. The small height of the quantum dots results in short-wavelength emission and are simultaneously an effective tool to fight the reduction of oscillator strength from quantum-confined Stark effect due to polarization fields. The strong quantum confinement results in room-temperature electroluminescence peaks at 261 and 340 nm, well above the 365 nm bandgap of bulk GaN. The demonstration opens the doorway to exploit many varied features of quantum dot physics to realize high-efficiency short-wavelength light sources.

  6. Structural and dielectric properties of Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin films grown by PLD

    SciTech Connect (OSTI)

    James, K. K.; Satish, B.; Jayaraj, M. K.

    2014-01-28

    Ferroelectric thin films of Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} (BST) were deposited on Si/SiO{sub 2}/TiO{sub 2}/Pt (PtSi) substrate by pulsed laser deposition (PLD). Crystalline films with perovskite structure were obtained without post-deposition annealing. Phase purity of the deposited films was confirmed by x-ray diffraction. The lowest value of FWHM obtained for the film deposited at oxygen pressure 5.4×10{sup ?4} mbar and substrate temperature 600°C, indicates the high crystallinity of the film. The room temperature dielectric constant at 100 kHz was 85. Butterfly loop, which is the characteristic of ferroelectric materials, was obtained in the regime of ?4 to +4V. The leakage current density was nearly 9×10{sup ?13} Acm{sup ?2}.

  7. Nanostructured light-absorbing crystalline CuIn{sub (1–x)}Ga{sub x}Se{sub 2} thin films grown through high flux, low energy ion irradiation

    SciTech Connect (OSTI)

    Hall, Allen J.; Hebert, Damon; Rockett, Angus A.; Shah, Amish B.; Bettge, Martin

    2013-10-21

    A hybrid effusion/sputtering vacuum system was modified with an inductively coupled plasma (ICP) coil enabling ion assisted physical vapor deposition of CuIn{sub 1?x}Ga{sub x}Se{sub 2} thin films on GaAs single crystals and stainless steel foils. With <80 W rf power to the ICP coil at 620–740 °C, film morphologies were unchanged compared to those grown without the ICP. At low temperature (600–670 °C) and high rf power (80–400 W), a light absorbing nanostructured highly anisotropic platelet morphology was produced with surface planes dominated by (112){sub T} facets. At 80–400 W rf power and 640–740 °C, both interconnected void and small platelet morphologies were observed while at >270 W and above >715 °C nanostructured pillars with large inter-pillar voids were produced. The latter appeared black and exhibited a strong (112){sub T} texture with interpillar twist angles of ±8°. Application of a negative dc bias of 0–50 V to the film during growth was not found to alter the film morphology or stoichiometry. The results are interpreted as resulting from the plasma causing strong etching favoring formation of (112){sub T} planes and preferential nucleation of new grains, balanced against conventional thermal diffusion and normal growth mechanisms at higher temperatures. The absence of effects due to applied substrate bias suggests that physical sputtering or ion bombardment effects were minimal. The nanostructured platelet and pillar films were found to exhibit less than one percent reflectivity at angles up to 75° from the surface normal.

  8. On the reliability of nanoindentation hardness of Al{sub 2}O{sub 3} films grown on Si-wafer by atomic layer deposition

    SciTech Connect (OSTI)

    Liu, Xuwen, E-mail: xuwen.liu@aalto.fi; Haimi, Eero; Hannula, Simo-Pekka [Department of Materials Science and Engineering, Aalto University School of Chemical Technology, Vuorimiehentie 2A, FI-00076 Espoo (Finland); Ylivaara, Oili M. E.; Puurunen, Riikka L. [VTT Technical Research Centre of Finland, Tietotie 3, FI-02044 Espoo (Finland)

    2014-01-15

    The interest in applying thin films on Si-wafer substrate for microelectromechanical systems devices by using atomic layer deposition (ALD) has raised the demand on reliable mechanical property data of the films. This study aims to find a quick method for obtaining nanoindentation hardness of thin films on silicon with improved reliability. This is achieved by ensuring that the film hardness is determined under the condition that no plastic deformation occurs in the substrate. In the study, ALD Al{sub 2}O{sub 3} films having thickness varying from 10 to 600?nm were deposited on a single-side polished silicon wafer at 300?°C. A sharp cube-corner indenter was used for the nanoindentation measurements. A thorough study on the Si-wafer reference revealed that at a specific contact depth of about 8?nm the wafer deformation in loading transferred from elastic to elastic–plastic state. Furthermore, the occurrence of this transition was associated with a sharp increase of the power-law exponent, m, when the unloading data were fitted to a power-law relation. Since m is only slightly material dependent and should fall between 1.2 and 1.6 for different indenter geometry having elastic contact to common materials, it is proposed that the high m values are the results from the inelastic events during unloading. This inelasticity is linked to phase transformations during pressure releasing, a unique phenomenon widely observed in single crystal silicon. Therefore, it is concluded that m could be used to monitor the mechanical state of the Si substrate when the whole coating system is loaded. A suggested indentation depth range can then be assigned to each film thickness to provide guidelines for obtaining reliable property data. The results show good consistence for films thicker than 20?nm and the nanoindentation hardness is about 11?GPa independent of film thickness.

  9. Structure and magnetism in strained Ge{sub 1-x-y}Sn{sub x}Mn{sub y} films grown on Ge(001) by low temperature molecular beam epitaxy

    SciTech Connect (OSTI)

    Prestat, E. [INAC, SP2M, CEA and Universite Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France); Karlsruher Institut fuer Technologie (KIT), Laboratorium fuer Elektronenmikroskopie, D-76128 Karlsruhe (Germany); Barski, A.; Bellet-Amalric, E.; Morel, R.; Tainoff, D.; Jain, A.; Porret, C.; Bayle-Guillemaud, P.; Jamet, M. [INAC, SP2M, CEA and Universite Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France); Jacquot, J.-F. [INAC, SCIB, CEA and Universite Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France)

    2013-07-01

    In this letter, we study the structural and magnetic properties of Ge{sub 1-x-y}Sn{sub x}Mn{sub y} films grown on Ge(001) by low temperature molecular beam epitaxy using X-ray diffraction, high resolution transmission electron microscopy, and superconducting quantum interference device. Like in Mn doped Ge films, Mn atoms diffuse during the growth and aggregate into vertically aligned Mn-rich nanocolumns of a few nanometers in diameter. Transmission electron microscopy observations in plane view clearly indicate that the Sn incorporation is not uniform with concentration in Mn rich vertical nanocolumns lower than the detection limit of electron energy loss spectroscopy. The matrix exhibits a GeSn solid solution while there is a Sn-rich GeSn shell around GeMn nanocolumns. The magnetization in Ge{sub 1-x-y}Sn{sub x}Mn{sub y} layers is higher than in Ge{sub 1-x}Mn{sub x} films. This magnetic moment enhancement in Ge{sub 1-x-y}Sn{sub x}Mn{sub y} is probably related to the modification of the electronic structure of Mn atoms in the nanocolumns by the Sn-rich shell, which is formed around the nanocolumns.

  10. High Efficiency m-plane LEDs on Low Defect Density Bulk GaN Substrates

    SciTech Connect (OSTI)

    David, Aurelien

    2012-10-15

    Solid-state lighting is a key technology for reduction of energy consumption in the US and worldwide. In principle, by replacing standard incandescent bulbs and other light sources with sources based on light-emitting diodes (LEDs), ultimate energy efficiency can be achieved. The efficiency of LEDs has improved tremendously over the past two decades, however further progress is required for solid- state lighting to reach its full potential. The ability of an LED at converting electricity to light is quantified by its internal quantum efficiency (IQE). The material of choice for visible LEDs is Gallium Nitride (GaN), which is at the basis of blue-emitting LEDs. A key factor limiting the performance of GaN LEDs is the so-called efficiency droop, whereby the IQE of the LED decreases significantly at high current density. Despite decades of research, efficiency droop remains a major issue. Since high-current operation is necessary for practical lighting applications, reducing droop is a major challenge for the scientific community and the LED industry. Our approach to solving the droop issue is the use of newly available low-defect-density bulk GaN non-polar substrates. In contrast to the standard foreign substrates (sapphire, silicon carbide, silicon) used in the industry, we have employed native bulk GaN substrates with very low defect density, thus ensuring exquisite material quality and high IQE. Whereas all commercial LEDs are grown along the c-plane crystal direction of GaN, we have used m-plane non-polar substrates; these drastically modify the physical properties of the LED and enable a reduction of droop. With this approach, we have demonstrated very high IQE performance and low droop. Our results focused on violet and blue LEDs. For these, we have demonstrated very high peak IQEs and current droops of 6% and 10% respectively (up to a high current density of 200A.cm-2). All these results were obtained under electrical operation. These high IQE and low droop values are in line with the program’s milestones. They demonstrate that bulk non-polar GaN substrates represent a disruptive technology for LED performance. Application of this technology to real-world products is feasible, provided that the cost of GaN substrates is compatible with the market’s requirement.

  11. Effects of laser energy fluence on the onset and growth of the Rayleigh-Taylor instabilities and its influence on the topography of the Fe thin film grown in pulsed laser deposition facility

    SciTech Connect (OSTI)

    Mahmood, S. [National Institute of Education, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore); Department of Physics, University of Karachi, Karachi 75270 (Pakistan); Rawat, R. S.; Wang, Y.; Lee, S.; Tan, T. L.; Springham, S. V.; Lee, P. [National Institute of Education, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore); Zakaullah, M. [Department of Physics, Quaid-i-Azam University, 45320 Islamabad (Pakistan)

    2012-10-15

    The effect of laser energy fluence on the onset and growth of Rayleigh-Taylor (RT) instabilities in laser induced Fe plasma is investigated using time-resolved fast gated imaging. The snow plow and shock wave models are fitted to the experimental results and used to estimate the ablation parameters and the density of gas atoms that interact with the ablated species. It is observed that RT instability develops during the interface deceleration stage and grows for a considerable time for higher laser energy fluence. The effects of RT instabilities formation on the surface topography of the Fe thin films grown in pulsed laser deposition system are investigated (i) using different laser energy fluences for the same wavelength of laser radiation and (ii) using different laser wavelengths keeping the energy fluence fixed. It is concluded that the deposition achieved under turbulent condition leads to less smooth deposition surfaces with bigger sized particle agglomerates or network.

  12. Two-dimensional weak anti-localization in Bi{sub 2}Te{sub 3} thin film grown on Si(111)-(7 Multiplication-Sign 7) surface by molecular beam epitaxy

    SciTech Connect (OSTI)

    Roy, Anupam; Guchhait, Samaresh; Sonde, Sushant; Dey, Rik; Pramanik, Tanmoy; Rai, Amritesh; Movva, Hema C. P.; Banerjee, Sanjay K. [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)] [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); Colombo, Luigi [Texas Instruments, 12500 TI Boulevard, Dallas, Texas 75266 (United States)] [Texas Instruments, 12500 TI Boulevard, Dallas, Texas 75266 (United States)

    2013-04-22

    We report on low temperature transport studies of Bi{sub 2}Te{sub 3} topological insulator thin films grown on Si(111)-(7 Multiplication-Sign 7) surface by molecular beam epitaxy. A sharp increase in the magnetoresistance with magnetic field at low temperature indicates the existence of weak anti-localization. The measured weak anti-localization effect agrees well with the Hikami-Larkin-Nagaoka model, and the extracted phase coherence length shows a power-law dependence with temperature indicating the existence of a two-dimensional system. An insulating ground state has also been observed at low temperature showing a logarithmic divergence of the resistance that appears to be the influence of electron-electron interaction in a two-dimensional system.

  13. Photovoltaic properties of Aurivillius phase Bi{sub 5}FeTi{sub 3}O{sub 15} thin films grown by pulsed laser deposition

    SciTech Connect (OSTI)

    Kooriyattil, Sudheendran; Katiyar, Rajesh K.; Pavunny, Shojan P. E-mail: shojanpp@gmail.com; Morell, Gerardo; Katiyar, Ram S. E-mail: shojanpp@gmail.com

    2014-08-18

    We report a remarkable photovoltaic effect in pulsed laser deposited multiferroic aurivillius phase Bi{sub 5}FeTi{sub 3}O{sub 15} (BFTO) thin films sandwiched between ZnO:Al transparent conductive oxide top electrode and SrRuO{sub 3} bottom electrode fabricated on amorphous fused silica substrates. The structural and micro structural properties of these films were analysed by X-ray diffraction and atomic force microscopy techniques. The films were showing a photo sensitive ferroelectric behaviour with a notable apparent polarization in the range of 10–15??C/cm{sup 2}. These films also exhibited a switchable photo-response and this parameter was observed to be sensitive to polarisation field and the polarization direction. The device shows a large ON/OFF photo current ratio with an open circuit voltage of 0.14?V. The photo response at zero bias of this BFTO based heterostructures showed rapid increase to a saturation value of 6??A at zero bias.

  14. Strain-Dependence of the Structure and Ferroic Properties of Epitaxial NiTiO3Thin Films Grown on Different Substrates

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Varga, Tamas; Droubay, Timothy C.; Bowden, Mark E.; Kovarik, Libor; Hu, Dehong; Chambers, Scott A.

    2015-01-01

    Polarization-induced weak ferromagnetism has been predicted a few years back in perovskite MTiO3(M = Fe, Mn, and Ni). We set out to stabilize this metastable perovskite structure by growing NiTiO3epitaxially on different substrates and to investigate the dependence of polar and magnetic properties on strain. Epitaxial NiTiO3films were deposited on Al2O3, Fe2O3, and LiNbO3substrates by pulsed laser deposition and characterized using several techniques. The effect of substrate choice on lattice strain, film structure, and physical properties was investigated. Our structural data from X-ray diffraction and electron microscopy shows that substrate-induced strain has a marked effect on the structure and crystallinemore »quality of the films. Physical property measurements reveal a dependence of the weak ferromagnetism and lattice polarization on strain and highlight our ability to control the ferroic properties in NiTiO3thin films by the choice of substrate. Our results are also consistent with the theoretical prediction that the ferromagnetism in acentric NiTiO3is polarization induced. From the substrates studied here, the perovskite substrate LiNbO3proved to be the most promising one for strong multiferroism.« less

  15. Low-temperature grown quaternary Heusler-compound Co{sub 2}Mn{sub 1-x}Fe{sub x}Si films on Ge(111)

    SciTech Connect (OSTI)

    Yamada, S.; Murakami, T.; Hamaya, K.; Varaprasad, B.; Rajanikanth, A.; Hono, K.; Takahashi, Y. K.; Miyao, M.

    2011-04-01

    Highly ordered quaternary Co{sub 2}Mn{sub 1-x}Fe{sub x}Si films on Ge(111) are explored for spintronic device applications on Si-large-scale integrated circuit (LSI) platform. By using low-temperature molecular beam epitaxy techniques, relatively large magnetic moments are demonstrated for x between 0.50 and 1.0 despite extremely low temperature growth of 130 deg. C. Also, L2{sub 1}-ordered crystal structures can be realized even on a group-IV semiconductor substrate, Ge, compatible with Si-LSI technologies. By the point contact Andreev reflection method, the spin polarization of Co{sub 2}Mn{sub 0.5}Fe{sub 0.5}Si films is estimated to be P= 0.58 {+-} 0.02. We believe that this study will be a first step for integration of high-performance spintronic applications with next ultra LSI.

  16. Structural, magnetic, and electronic properties of GdTiO{sub 3} Mott insulator thin films grown by pulsed laser deposition

    SciTech Connect (OSTI)

    Grisolia, M. N.; Bruno, F. Y.; Sando, D.; Jacquet, E.; Barthélémy, A.; Bibes, M.; Zhao, H. J.; Chen, X. M.; Bellaiche, L.

    2014-10-27

    We report on the optimization process to synthesize epitaxial thin films of GdTiO{sub 3} on SrLaGaO{sub 4} substrates by pulsed laser deposition. Optimized films are free of impurity phases and are fully strained. They possess a magnetic Curie temperature T{sub C}?=?31.8?K with a saturation magnetization of 4.2??{sub B} per formula unit at 10?K. Transport measurements reveal an insulating response, as expected. Optical spectroscopy indicates a band gap of ?0.7?eV, comparable to the bulk value. Our work adds ferrimagnetic orthotitanates to the palette of perovskite materials for the design of emergent strongly correlated states at oxide interfaces using a versatile growth technique such as pulsed laser deposition.

  17. Weak antilocalization effect in LPE-grown p-Hg0.8Cd0.2Te thin film and the evidence of Te-precipitation

    E-Print Network [OSTI]

    R. Yang; L. M. Wei; G. L. Yu

    2010-06-07

    The weak antilocalization effect is observed in a p-type Hg0.8Cd0.2Te thin film with thickness ~10 micrometers. Based on the analysis of composition, carrier species and excellent fitting of data with a model concerning weak antilocalization effect in Te crystal, the most plausible explanation is that the observed weak antilocalization effect is caused by Te-precipitation.

  18. Performance enhancement of GaN metal–semiconductor–metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO{sub 2} layer

    SciTech Connect (OSTI)

    Kumar, Manoj E-mail: aokyay@ee.bilkent.edu.tr; Tekcan, Burak; Okyay, Ali Kemal E-mail: aokyay@ee.bilkent.edu.tr

    2015-03-15

    The authors demonstrate improved device performance of GaN metal–semiconductor–metal ultraviolet (UV) photodetectors (PDs) by ultrathin HfO{sub 2} (UT-HfO{sub 2}) layer on GaN. The UT-HfO{sub 2} interfacial layer is grown by atomic layer deposition. The dark current of the PDs with UT-HfO{sub 2} is significantly reduced by more than two orders of magnitude compared to those without HfO{sub 2} insertion. The photoresponsivity at 360?nm is as high as 1.42 A/W biased at 5 V. An excellent improvement in the performance of the devices is ascribed to allowed electron injection through UT-HfO{sub 2} on GaN interface under UV illumination, resulting in the photocurrent gain with fast response time.

  19. Development of very high Jc in Ba(Fe1-xCox)2As2 thin films grown on CaF2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Tarantini, C.; Kametani, F.; Lee, S.; Jiang, J.; Weiss, J. D.; Jaroszynski, J.; Hellstrom, E. E.; Eom, C. B.; Larbalestier, D. C.

    2014-12-03

    Ba(Fe1-xCox)2As2 is the most tunable of the Fe-based superconductors (FBS) in terms of acceptance of high densities of self-assembled and artificially introduced pinning centres which are effective in significantly increasing the critical current density, Jc. Moreover, FBS are very sensitive to strain, which induces an important enhancement in critical temperature,Tc, of the material. In this study we demonstrate that strain induced by the substrate can further improve Jc of both single and multilayer films by more than that expected simply due to the increase in Tc. The multilayer deposition of Ba(Fe1-xCox)2As2 on CaF2 increases the pinning force density (Fp=Jc xmore »??H) by more than 60% compared to a single layer film, reaching a maximum of 84 GN/m3 at 22.5 T and 4.2 K, the highest value ever reported in any 122 phase.« less

  20. ZnO Nanotubes Grown at Low Temperature Using Ga as Catalysts and Their Enhanced Photocatalytic Activities

    E-Print Network [OSTI]

    Wang, Zhong L.

    substantial reports on tubular nanostructures of various materials including GaN,12 MoS2,13 TiO2,14 SiO2,15 AlZnO Nanotubes Grown at Low Temperature Using Ga as Catalysts and Their Enhanced PhotocatalyticVed: April 8, 2009 We report the synthesis of ZnO nanotubes grown via the Ga-catalyzed vapor transport method

  1. Lattice location of implanted $^{147}$Nd and $^{147*}$Pm in GaN using emission channeling

    E-Print Network [OSTI]

    De Vries, B; Vantomme, A; Correia, J G

    2003-01-01

    The lattice location of $^{147}$Nd and $^{147^{*}}$Pm in thin-film, single-crystalline hexagonal GaN was studied by means of the emission channeling technique. The angular emission yields of $\\beta^{-}$-particles and conversion electrons emitted by the radioactive isotopes $^{147}$Nd and $^{147^{*}}$Pm were measured using a position-sensitive detector following 60 keV room temperature implantation at a dose of 1 $\\times 10^{13}$ cm$^{-2}$ and annealing at 900°C. The emission patterns around the [0001], [1102], [1101], and [2113] crystal axes give direct evidence that the majority (70%) of Nd and Pm atoms occupy substitutional Ga sites.

  2. Effect of passivation on stress relaxation in electroplated copper films

    E-Print Network [OSTI]

    Huang, Rui

    Effect of passivation on stress relaxation in electroplated copper films Dongwen Gan and Paul S. Ho of interfacial mass transport by measuring stress relaxation in electroplated Cu films with four different cap examined.3,4 In particular, Hu et al.3 demonstrated a significant improvement in the EM lifetime by coating

  3. Microstructure and dielectric properties of Ba{sub 1-x}Sr{sub x}TiO{sub 3} films grown on LaAlO{sub 3} substrates

    SciTech Connect (OSTI)

    Gim, Y.; Hudson, T.; Fan, Y.; Kwon, C.; Findikoglu, A. T.; Gibbons, B. J.; Park, B. H.; Jia, Q. X.

    2000-08-21

    We report a systematic study of the microstructure and dielectric properties of barium strontium titanate, Ba{sub 1-x}Sr{sub x}TiO{sub 3}, films grown by laser ablation on LaAlO{sub 3} substrates, where x=0.1-0.9 at an interval of 0.1. X-ray diffraction analysis shows that when x<0.4, the longest unit-cell axis is parallel to the plane of the substrate but perpendicular as x approaches 1. Dielectric constant versus temperature measurements show that the relative dielectric constant has a maximum value and that the peak temperatures corresponding to the maximum relative dielectric constant are about 70 degree sign C higher when x{<=}0.4 but similar when x>0.4, compared with the peak temperatures of the bulk Ba{sub 1-x}Sr{sub x}TiO{sub 3}. At room temperature, the dielectric constant and tunability are relatively high when x{<=}0.4 but start to decrease rapidly as x increases. (c) 2000 American Institute of Physics.

  4. Isothermal stress relaxation in electroplated Cu films. I. Mass transport measurements

    E-Print Network [OSTI]

    Huang, Rui

    Isothermal stress relaxation in electroplated Cu films. I. Mass transport measurements Dongwen Gan-boundary mass transport measured from isothermal stress relaxation in electroplated Cu thin films. Thermal stresses in electroplated Cu films with and without passivation, subjected to thermal cycling

  5. K.K. Gan Transmission Bandwidth 1 Results on Bandwidth Measurement

    E-Print Network [OSTI]

    Gan, K. K.

    K.K. Gan Transmission Bandwidth 1 Results on Bandwidth Measurement April 16, 2008 K.K, Gan The Ohio State University #12;K.K. Gan Transmission Bandwidth 2 Outline Transmission on micro-cables Transmission on TRT micro-cables Transmission on TRT HV micro-coaxs Summary #12;K.K. Gan Transmission

  6. Impact of defects on the electrical transport, optical properties and failure mechanisms of GaN nanowires.

    SciTech Connect (OSTI)

    Armstrong, Andrew M.; Aubry, Sylvie; Shaner, Eric Arthur; Siegal, Michael P.; Li, Qiming; Jones, Reese E.; Westover, Tyler; Wang, George T.; Zhou, Xiao Wang; Talin, Albert Alec; Bogart, Katherine Huderle Andersen; Harris, C. Thomas; Huang, Jian Yu

    2010-09-01

    We present the results of a three year LDRD project that focused on understanding the impact of defects on the electrical, optical and thermal properties of GaN-based nanowires (NWs). We describe the development and application of a host of experimental techniques to quantify and understand the physics of defects and thermal transport in GaN NWs. We also present the development of analytical models and computational studies of thermal conductivity in GaN NWs. Finally, we present an atomistic model for GaN NW electrical breakdown supported with experimental evidence. GaN-based nanowires are attractive for applications requiring compact, high-current density devices such as ultraviolet laser arrays. Understanding GaN nanowire failure at high-current density is crucial to developing nanowire (NW) devices. Nanowire device failure is likely more complex than thin film due to the prominence of surface effects and enhanced interaction among point defects. Understanding the impact of surfaces and point defects on nanowire thermal and electrical transport is the first step toward rational control and mitigation of device failure mechanisms. However, investigating defects in GaN NWs is extremely challenging because conventional defect spectroscopy techniques are unsuitable for wide-bandgap nanostructures. To understand NW breakdown, the influence of pre-existing and emergent defects during high current stress on NW properties will be investigated. Acute sensitivity of NW thermal conductivity to point-defect density is expected due to the lack of threading dislocation (TD) gettering sites, and enhanced phonon-surface scattering further inhibits thermal transport. Excess defect creation during Joule heating could further degrade thermal conductivity, producing a viscous cycle culminating in catastrophic breakdown. To investigate these issues, a unique combination of electron microscopy, scanning luminescence and photoconductivity implemented at the nanoscale will be used in concert with sophisticated molecular-dynamics calculations of surface and defect-mediated NW thermal transport. This proposal seeks to elucidate long standing material science questions for GaN while addressing issues critical to realizing reliable GaN NW devices.

  7. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; Worschech, L.; Gru?tzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  8. Temperature dependent dielectric function and the E{sub 0} critical points of hexagonal GaN from 30 to 690 K

    SciTech Connect (OSTI)

    Kim, Tae Jung Hwang, Soon Yong; Byun, Jun Seok; Barange, Nilesh S.; Park, Han Gyeol; Dong Kim, Young

    2014-02-15

    The complex dielectric function ? and the E{sub 0} excitonic and band-edge critical-point structures of hexagonal GaN are reported for temperatures from 30 to 690 K and energies from 0.74 to 6.42 eV, obtained by rotating-compensator spectroscopic ellipsometry on a 1.9 ?m thick GaN film deposited on a c-plane (0001) sapphire substrate by molecular beam epitaxy. Direct inversion and B-splines in a multilayer-structure calculation were used to extract the optical properties of the film from the measured pseudodielectric function ???. At low temperature sharp E{sub 0} excitonic and critical-point interband transitions are separately observed. Their temperature dependences were determined by fitting the data to the empirical Varshni relation and the phenomenological expression that contains the Bose-Einstein statistical factor.

  9. Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon

    SciTech Connect (OSTI)

    Heo, Junseok; Guo Wei; Bhattacharya, Pallab

    2011-01-10

    Optically pumped lasing at room temperature in a silicon based monolithic single GaN nanowire with a two-dimensional photonic crystal microcavity is demonstrated. Catalyst-free nanowires with low density ({approx}10{sup 8} cm{sup -2}) are grown on Si by plasma-assisted molecular beam epitaxy. High resolution transmission electron microscopy images reveal that the nanowires are of wurtzite structure and they have no observable defects. A single nanowire laser fabricated on Si is characterized by a lasing transition at {lambda}=371.3 nm with a linewidth of 0.55 nm. The threshold is observed at a pump power density of {approx}120 kW/cm{sup 2} and the spontaneous emission factor {beta} is estimated to be 0.08.

  10. Demonstration of forward inter-band tunneling in GaN by polarization engineering

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram; Park, Pil Sung; Rajan, Siddharth

    2011-12-05

    We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm{sup 2} at 10 mV, and 17.7 A/cm{sup 2} peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable negative differential resistance in interband III-Nitride tunnel junctions, with peak-valley current ratio of 4 at room temperature. The forward current density achieved in this work meets the typical current drive requirements of a multi-junction solar cell.

  11. ARM MJO Investigation Experiment on Gan Island (AMIE-Gan) Science Plan

    SciTech Connect (OSTI)

    Long, CL; Del Genio, A; Deng, M; Fu, X; Gustafson, W; Houze, R; Jakob, C; Jensen, M; Johnson, R; Liu, X; Luke, E; May, P; McFarlane, S; Minnis, P; Schumacher, C; Vogelmann, A; Wang, Y; Webster, P; Xie, S; Zhang, C

    2011-04-11

    The overarching campaign, which includes the ARM Mobile Facility 2 (AMF2) deployment in conjunction with the Dynamics of the Madden-Julian Oscillation (DYNAMO) and the Cooperative Indian Ocean experiment on intraseasonal variability in the Year 2011 (CINDY2011) campaigns, is designed to test several current hypotheses regarding the mechanisms responsible for Madden-Julian Oscillation (MJO) initiation and propagation in the Indian Ocean area. The synergy between the proposed AMF2 deployment with DYNAMO/CINDY2011, and the corresponding funded experiment on Manus, combine for an overarching ARM MJO Investigation Experiment (AMIE) with two components: AMF2 on Gan Island in the Indian Ocean (AMIE-Gan), where the MJO initiates and starts its eastward propagation; and the ARM Manus site (AMIE-Manus), which is in the general area where the MJO usually starts to weaken in climate models. AMIE-Gan will provide measurements of particular interest to Atmospheric System Research (ASR) researchers relevant to improving the representation of MJO initiation in climate models. The framework of DYNAMO/CINDY2011 includes two proposed island-based sites and two ship-based locations forming a square pattern with sonde profiles and scanning precipitation and cloud radars at both island and ship sites. These data will be used to produce a Variational Analysis data set coinciding with the one produced for AMIE-Manus. The synergy between AMIE-Manus and AMIE-Gan will allow studies of the initiation, propagation, and evolution of the convective cloud population within the framework of the MJO. As with AMIE-Manus, AMIE-Gan/DYNAMO also includes a significant modeling component geared toward improving the representation of MJO initiation and propagation in climate and forecast models. This campaign involves the deployment of the second, marine-capable, AMF; all of the included measurement systems; and especially the scanning and vertically pointing radars. The campaign will include sonde launches at a rate of eight per day for the duration of the deployment. The increased sonde launches for the entire period matches that of the AMIE-Manus campaign and makes possible a far more robust Variational Analysis forcing data set product for the entire campaign, and thus better capabilities for modeling studies and synergistic research using the data from both AMIE sites.

  12. Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 2) semipolar versus (0001) polar

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Articles you may be interested in Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam light-emitting diodes prepared on ( 11 2 ¯ 2 ) -plane GaN J. Appl. Phys. 100, 113109 (2006); 10.1063/1.2382667 Demonstration of a semipolar ( 10 1 ¯ 3 ¯ ) In Ga N Ga N green light emitting diode Appl. Phys. Lett. 87, 231110

  13. Electronic Properties of Large-scale Graphene Films Chemical Vapor Synthesized on Nickel and on Copper

    E-Print Network [OSTI]

    Chen, Yong P.

    transport properties of graphene films grown on Ni and Cu. Sample Preparation The synthesis of graphene film1 Electronic Properties of Large-scale Graphene Films Chemical Vapor Synthesized on Nickel of large scale graphene films grown by chemical vapor synthesis on Ni and Cu, and then transferred to SiO2

  14. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  15. Effect of postdeposition annealing on the electrical properties of ?-Ga{sub 2}O{sub 3} thin films grown on p-Si by plasma-enhanced atomic layer deposition

    SciTech Connect (OSTI)

    Altuntas, Halit; Donmez, Inci; Ozgit-Akgun, Cagla; Biyikli, Necmi

    2014-07-01

    Ga{sub 2}O{sub 3} dielectric thin films were deposited on (111)-oriented p-type silicon wafers by plasma-enhanced atomic layer deposition using trimethylgallium and oxygen plasma. Structural analysis of the Ga{sub 2}O{sub 3} thin films was carried out using grazing-incidence x-ray diffraction. As-deposited films were amorphous. Upon postdeposition annealing at 700, 800, and 900?°C for 30?min under N{sub 2} ambient, films crystallized into ?-form monoclinic structure. Electrical properties of the ?-Ga{sub 2}O{sub 3} thin films were then investigated by fabricating and characterizing Al/?-Ga{sub 2}O{sub 3}/p-Si metal–oxide-semiconductor capacitors. The effect of postdeposition annealing on the leakage current densities, leakage current conduction mechanisms, dielectric constants, flat-band voltages, reverse breakdown voltages, threshold voltages, and effective oxide charges of the capacitors were presented. The effective oxide charges (Q{sub eff}) were calculated from the capacitance–voltage (C-V) curves using the flat-band voltage shift and were found as 2.6?×?10{sup 12}, 1.9?×?10{sup 12}, and 2.5?×?10{sup 12} cm{sup ?2} for samples annealed at 700, 800, and 900?°C, respectively. Effective dielectric constants of the films decreased with increasing annealing temperature. This situation was attributed to the formation of an interfacial SiO{sub 2} layer during annealing process. Leakage mechanisms in the regions where current increases gradually with voltage were well fitted by the Schottky emission model for films annealed at 700 and 900?°C, and by the Frenkel–Poole emission model for film annealed at 800?°C. Leakage current density was found to improve with annealing temperature. ?-Ga{sub 2}O{sub 3} thin film annealed at 800?°C exhibited the highest reverse breakdown field value.

  16. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    director cds murder nudity soundtrack BBC movie releases footage worth documentary film Blu-rays Blu-ray Ga

  17. Conductivity based on selective etch for GaN devices and applications thereof

    DOE Patents [OSTI]

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  18. Counting molecular-beam grown graphene layers

    SciTech Connect (OSTI)

    Plaut, Annette S.; Wurstbauer, Ulrich; Pinczuk, Aron; Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 ; Garcia, Jorge M.; Pfeiffer, Loren N.

    2013-06-17

    We have used the ratio of the integrated intensity of graphene's Raman G peak to that of the silicon substrate's first-order optical phonon peak, accurately to determine the number of graphene layers across our molecular-beam (MB) grown graphene films. We find that these results agree well both, with those from our own exfoliated single and few-layer graphene flakes, and with the results of Koh et al.[ACS Nano 5, 269 (2011)]. We hence distinguish regions of single-, bi-, tri-, four-layer, etc., graphene, consecutively, as we scan coarsely across our MB-grown graphene. This is the first, but crucial, step to being able to grow, by such molecular-beam-techniques, a specified number of large-area graphene layers, to order.

  19. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect (OSTI)

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  20. III-nitride quantum cascade detector grown by metal organic chemical vapor deposition

    SciTech Connect (OSTI)

    Song, Yu, E-mail: yusong@princeton.edu; Huang, Tzu-Yung; Badami, Pranav; Gmachl, Claire [Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08540 (United States); Bhat, Rajaram; Zah, Chung-En [Corning Incorporated, Corning, New York 14831 (United States)

    2014-11-03

    Quantum cascade (QC) detectors in the GaN/Al{sub x}Ga{sub 1?x}N material system grown by metal organic chemical vapor deposition are designed, fabricated, and characterized. Only two material compositions, i.e., GaN as wells and Al{sub 0.5}Ga{sub 0.5}N as barriers are used in the active layers. The QC detectors operates around 4??m, with a peak responsivity of up to ?100??A/W and a detectivity of up to 10{sup 8} Jones at the background limited infrared performance temperature around 140?K.

  1. Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy

    E-Print Network [OSTI]

    Bennett, Samantha; Smeeton, Tim; Saxey, David; Smith, George; Hooper, Stewart; Heffernan, Jonathan; Humphreys, Colin; Oliver, Rachel

    2012-03-06

    ) and laser diodes (LDs) fabricated from gallium nitride (GaN) and the InxGa1-xN and AlyGa1-yN alloys are used in diverse technologies including lighting, televisions, mobile phones, optical storage systems and entertainment centers. The mass- market impact... silicon was used as the n-type dopant and bis-(cyclopentadienyl) magnesium (Cp2Mg) was used as the magnesium source for the p-type doping. All of the layers below the In0.18Ga0.82N QW were grown using ammonia as the source of nitrogen, the ammonia...

  2. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-01

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

  3. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D. J.; Kurtz, Sarah R.; Kibbler, A. E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-15

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.

  4. Luminescence properties of defects in GaN

    SciTech Connect (OSTI)

    Reshchikov, Michael A.; Morkoc, Hadis [Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)

    2005-03-15

    Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects (vacancies, interstitial, and antisites), intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of other impurities, such as C, Si, H, O, Be, Mn, Cd, etc., on the luminescence properties of GaN are also reviewed. Further, atypical luminescence lines which are tentatively attributed to the surface and structural defects are discussed. The effect of surfaces and surface preparation, particularly wet and dry etching, exposure to UV light in vacuum or controlled gas ambient, annealing, and ion implantation on the characteristics of the defect-related emissions is described.

  5. Highly mismatched crystalline and amorphous GaN(1-x)As(x) alloys in the whole composition range

    SciTech Connect (OSTI)

    Yu, K. M.; Novikov, S. V.; Broesler, R.; Demchenko, I. N.; Denlinger, J. D.; Liliental-Weber, Z.; Luckert, F.; Martin, R. W.; Walukiewicz, W.; Foxon, C. T.

    2009-08-29

    Alloying is a commonly accepted method to tailor properties of semiconductor materials for specific applications. Only a limited number of semiconductor alloys can be easily synthesized in the full composition range. Such alloys are, in general, formed of component elements that are well matched in terms of ionicity, atom size, and electronegativity. In contrast there is a broad class of potential semiconductor alloys formed of component materials with distinctly different properties. In most instances these mismatched alloys are immiscible under standard growth conditions. Here we report on the properties of GaN1-xAsx, a highly mismatched, immiscible alloy system that was successfully synthesized in the whole composition range using a nonequilibrium low temperature molecular beam epitaxy technique. The alloys are amorphous in the composition range of 0.17films have smooth morphology, homogeneous composition, and sharp, well defined optical absorption edges. The band gap energy varies in a broad energy range from ~;;3.4 eV in GaN to ~;;0.8 eV at x~;;0.85. The reduction in the band gap can be attributed primarily to the downward movement of the conduction band for alloys with x>0.2, and to the upward movement of the valence band for alloys with x<0.2. The unique features of the band structure offer an opportunity of using GaN1-xAsx alloys for various types of solar power conversion devices.

  6. Comparative study of GaN mesa etch characteristics in Cl{sub 2} based inductively coupled plasma with Ar and BCl{sub 3} as additive gases

    SciTech Connect (OSTI)

    Rawal, Dipendra Singh, E-mail: dsrawal15@gmail.com; Arora, Henika; Sehgal, Bhupender Kumar; Muralidharan, Rangarajan [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi-110054 (India)

    2014-05-15

    GaN thin film etching is investigated and compared for mesa formation in inductively coupled plasma (ICP) of Cl{sub 2} with Ar and BCl{sub 3} gas additives using photoresist mask. Etch characteristics are studied as a function of ICP process parameters, viz., ICP power, radio frequency (RF) power, and chamber pressure at fixed total flow rate. The etch rate at each ICP/RF power is 0.1–0.2??m/min higher for Cl{sub 2}/Ar mixture mainly due to higher Cl dissociation efficiency of Ar additive that readily provides Cl ion/radical for reaction in comparison to Cl{sub 2}/BCl{sub 3} mixture. Cl{sub 2}/Ar mixture also leads to better photoresist mask selectivity. The etch-induced roughness is investigated using atomic force microscopy. Cl{sub 2}/Ar etching has resulted in lower root-mean-square roughness of GaN etched surface in comparison to Cl{sub 2}/BCl{sub 3} etching due to increased Ar ion energy and flux with ICP/RF power that enhances the sputter removal of etch product. The GaN surface damage after etching is also evaluated using room temperature photoluminescence and found to be increasing with ICP/RF power for both the etch chemistries with higher degree of damage in Cl{sub 2}/BCl{sub 3} etching under same condition.

  7. Optical characteristics of nanocrystalline Al{sub x}Ga{sub 1?x}N thin films deposited by hollow cathode plasma-assisted atomic layer deposition

    SciTech Connect (OSTI)

    Goldenberg, Eda; Ozgit-Akgun, Cagla; Biyikli, Necmi; Kemal Okyay, Ali

    2014-05-15

    Gallium nitride (GaN), aluminum nitride (AlN), and Al{sub x}Ga{sub 1?x}N films have been deposited by hollow cathode plasma-assisted atomic layer deposition at 200?°C on c-plane sapphire and Si substrates. The dependence of film structure, absorption edge, and refractive index on postdeposition annealing were examined by x-ray diffraction, spectrophotometry, and spectroscopic ellipsometry measurements, respectively. Well-adhered, uniform, and polycrystalline wurtzite (hexagonal) GaN, AlN, and Al{sub x}Ga{sub 1?x}N films were prepared at low deposition temperature. As revealed by the x-ray diffraction analyses, crystallite sizes of the films were between 11.7 and 25.2?nm. The crystallite size of as-deposited GaN film increased from 11.7 to 12.1 and 14.4?nm when the annealing duration increased from 30?min to 2?h (800?°C). For all films, the average optical transmission was ?85% in the visible (VIS) and near infrared spectrum. The refractive indices of AlN and Al{sub x}Ga{sub 1?x}N were lower compared to GaN thin films. The refractive index of as-deposited films decreased from 2.33 to 2.02 (??=?550?nm) with the increased Al content x (0???x???1), while the extinction coefficients (k) were approximately zero in the VIS spectrum (>400?nm). Postdeposition annealing at 900?°C for 2?h considerably lowered the refractive index value of GaN films (2.33–1.92), indicating a significant phase change. The optical bandgap of as-deposited GaN film was found to be 3.95?eV, and it decreased to 3.90?eV for films annealed at 800?°C for 30?min and 2?h. On the other hand, this value increased to 4.1?eV for GaN films annealed at 900?°C for 2?h. This might be caused by Ga{sub 2}O{sub 3} formation and following phase change. The optical bandgap value of as-deposited Al{sub x}Ga{sub 1?x}N films decreased from 5.75 to 5.25?eV when the x values decreased from 1 to 0.68. Furthermore, postdeposition annealing did not affect the bandgap of Al-rich films.

  8. Nonlithographic epitaxial SnxGe1x dense nanowire arrays grown on Ge,,001...

    E-Print Network [OSTI]

    Atwater, Harry

    Nonlithographic epitaxial SnxGe1Àx dense nanowire arrays grown on Ge,,001... Regina Ragan-thick SnxGe1 x /Ge(001) epitaxial films with 0 x 0.085 by molecular-beam epitaxy. These films evolve during growth into a dense array of SnxGe1 x nanowires oriented along 001 , as confirmed by composition contrast

  9. Biaxially oriented film on flexible polymeric substrate

    DOE Patents [OSTI]

    Finkikoglu, Alp T. (Los Alamos, NM); Matias, Vladimir (Santa Fe, NM)

    2009-10-13

    A flexible polymer-based template having a biaxially oriented film grown on the surface of a polymeric substrate. The template having the biaxially oriented film can be used for further epitaxial growth of films of interest for applications such as photovoltaic cells, light emitting diodes, and the like. Methods of forming such a flexible template and providing the polymeric substrate with a biaxially oriented film deposited thereon are also described.

  10. Orogenic movement mechanism for the formation of symmetrical relief features in copper nitride thin films

    E-Print Network [OSTI]

    Zexian, Cao

    Orogenic movement mechanism for the formation of symmetrical relief features in copper nitride thin heterogeneity, etc. In preparing thin films of the thermally unstable copper nitride Cu3N, growth proceeds-gap semiconduc- tors such as SiC and GaN that are expected to operate at temperatures over 300 °C demand both

  11. Metal contacts on ZnSe and GaN

    SciTech Connect (OSTI)

    Duxstad, K J [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering

    1997-05-01

    Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

  12. Development of very high Jc in Ba(Fe1-xCox)2As2 thin films grown on CaF2

    SciTech Connect (OSTI)

    Tarantini, C.; Kametani, F.; Lee, S.; Jiang, J.; Weiss, J. D.; Jaroszynski, J.; Hellstrom, E. E.; Eom, C. B.; Larbalestier, D. C.

    2014-12-03

    Ba(Fe1-xCox)2As2 is the most tunable of the Fe-based superconductors (FBS) in terms of acceptance of high densities of self-assembled and artificially introduced pinning centres which are effective in significantly increasing the critical current density, Jc. Moreover, FBS are very sensitive to strain, which induces an important enhancement in critical temperature,Tc, of the material. In this study we demonstrate that strain induced by the substrate can further improve Jc of both single and multilayer films by more than that expected simply due to the increase in Tc. The multilayer deposition of Ba(Fe1-xCox)2As2 on CaF2 increases the pinning force density (Fp=Jc x ??H) by more than 60% compared to a single layer film, reaching a maximum of 84 GN/m3 at 22.5 T and 4.2 K, the highest value ever reported in any 122 phase.

  13. Photo-induced wettability of TiO{sub 2} film with Au buffer layer

    SciTech Connect (OSTI)

    Purkayastha, Debarun Dhar; Sangani, L. D. Varma; Krishna, M. Ghanashyam; Madhurima, V.

    2014-04-24

    The effect of thickness of Au buffer layer (15-25 nm) between TiO{sub 2} film and substrate on the wettability of TiO{sub 2} films is reported. TiO{sub 2} films grown on Au buffer layer have a higher contact angle of 96-;100° as compared to 47.6o for the film grown without buffer layer. The transition from hydrophobicity to hydrophilicity under UV irradiation occurs within 10 min. for the buffer layered films whereas it is almost 30 min. for the film grown without buffer layer. The enhanced photo induced hydrophilicity is shown to be surface energy driven.

  14. K.K. Gan 1 Building New Opto-boards by 2012?

    E-Print Network [OSTI]

    Gan, K. K.

    K.K. Gan 1 Building New Opto-boards by 2012? August 3, 2010 K.K. Gan The Ohio State University #12 to fabricate prototype BeO boards by vendor 2 weeks for passive components mounting 2 weeks to fabricate/test new boards 8 weeks to fabricate production BeO boards by vendor 2 weeks for passive components

  15. Investigation of the optical properties of MoS{sub 2} thin films...

    Office of Scientific and Technical Information (OSTI)

    ellipsometry Spectroscopic ellipsometry (SE) characterization of layered transition metal dichalcogenide (TMD) thin films grown by vapor phase sulfurization is reported. By...

  16. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore »to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  17. Layer-by-Layer Assembly of Clay-filled Polymer Nanocomposite Thin Films 

    E-Print Network [OSTI]

    Jang, Woo-Sik

    2010-01-14

    robotic dipping system, for the preparation of these thin films, was built. The robot alternately dips a substrate into aqueous mixtures with rinsing and drying in between. Thin films of sodium montmorillonite clay and cationic polymer were grown...

  18. Engineering Al-based Thin Film Materials for Power Devices and Energy Storage Applications

    E-Print Network [OSTI]

    Perng, Ya-Chuan

    2012-01-01

    O Thin Films as a Solid Electrolyte for 3D Microbatteries,”Li 0.5 La 0.5 )TiO 3 solid electrolyte thin films grown byIonic conductivity in solid electrolytes based on lithium

  19. Nitrogen doped zinc oxide thin film

    SciTech Connect (OSTI)

    Li, Sonny X.

    2003-12-15

    To summarize, polycrystalline ZnO thin films were grown by reactive sputtering. Nitrogen was introduced into the films by reactive sputtering in an NO{sub 2} plasma or by N{sup +} implantation. All ZnO films grown show n-type conductivity. In unintentionally doped ZnO films, the n-type conductivities are attributed to Zn{sub i}, a native shallow donor. In NO{sub 2}-grown ZnO films, the n-type conductivity is attributed to (N{sub 2}){sub O}, a shallow double donor. In NO{sub 2}-grown ZnO films, 0.3 atomic % nitrogen was found to exist in the form of N{sub 2}O and N{sub 2}. Upon annealing, N{sub 2}O decomposes into N{sub 2} and O{sub 2}. In furnace-annealed samples N{sub 2} redistributes diffusively and forms gaseous N{sub 2} bubbles in the films. Unintentionally doped ZnO films were grown at different oxygen partial pressures. Zni was found to form even at oxygen-rich condition and led to n-type conductivity. N{sup +} implantation into unintentionally doped ZnO film deteriorates the crystallinity and optical properties and leads to higher electron concentration. The free electrons in the implanted films are attributed to the defects introduced by implantation and formation of (N{sub 2}){sub O} and Zni. Although today there is still no reliable means to produce good quality, stable p-type ZnO material, ZnO remains an attractive material with potential for high performance short wavelength optoelectronic devices. One may argue that gallium nitride was in a similar situation a decade ago. Although we did not obtain any p-type conductivity, we hope our research will provide a valuable reference to the literature.

  20. Epitaxial growth of high quality WO3 thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Leng, X.; Pereiro, J.; Strle, J.; Bollinger, A. T.; Bozovic, I.

    2015-09-09

    We have grown epitaxial WO3 films on various single-crystal substrates using radio-frequency (RF) magnetron sputtering. While pronounced surface roughness is observed in films grown on LaSrAlO4 substrates, films grown on YAlO3 substrates show atomically flat surfaces, as demonstrated by atomic force microscopy (AFM) and X-ray diffraction (XRD) measurements. The crystalline structure has been confirmed to be monoclinic by symmetric and skew-symmetric XRD. The dependence of the growth modes and the surface morphology on the lattice mismatch is discussed.

  1. This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

    DOE Patents [OSTI]

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  2. Three approaches to economical photovoltaics: conformal Cu2S, organic luminescent films, and PbSe nanocrystal superlattices

    E-Print Network [OSTI]

    Carbone, Ian Anthony

    2013-01-01

    thin films by atomic layer deposition. Journal of Materialsand J. Schoonman. Atomic layer deposition of CuxS for solarfilms grown by atomic layer deposition and chemical vapor

  3. Chromatin Ionic Atmosphere Analyzed by a Mesoscale Electrostatic Hin Hark Gan

    E-Print Network [OSTI]

    Schlick, Tamar

    Chromatin Ionic Atmosphere Analyzed by a Mesoscale Electrostatic Approach Hin Hark Gan and Tamar an electrostatic model to handle multivalent ions and compute the ionic distribution around a mesoscale chromatin

  4. Millimeter-wave GaN high electron mobility transistors and their integration with silicon electronics

    E-Print Network [OSTI]

    Chung, Jinwook W. (Jinwook Will)

    2011-01-01

    In spite of the great progress in performance achieved during the last few years, GaN high electron mobility transistors (HEMTs) still have several important issues to be solved for millimeter-wave (30 ~ 300 GHz) applications. ...

  5. Porous GaN nanowires synthesized using thermal chemical vapor deposition

    E-Print Network [OSTI]

    Kim, Bongsoo

    nanotube-confined reaction [4], arc discharge [5], laser ablation [6], sublimation [7], pyrolysis [8O3)/ carbons with NH3 produced the large-quantity porous GaN nanowires on the iron (Fe)/nickel (Ni

  6. Light extraction in individual GaN nanowires on Si for LEDs

    E-Print Network [OSTI]

    Zhou, Xiang

    GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

  7. Surface energy calculations from Zinc blende (111)/(-1-1-1) to Wurtzite (0001)/(000-1):a study of ZnO and GaN

    E-Print Network [OSTI]

    Zhang, Jingzhao; Tse, Kinfai; Deng, Bei; Xu, Hu; Zhu, Junyi

    2015-01-01

    The accurate absolute surface energies of (0001)/(000-1) surfaces of wurtzite structures are crucial in determining the thin film growth mode of important energy materials. However, the surface energies still remain to be solved due to the intrinsic difficulty of calculating dangling bond energy of asymmetrically bonded surface atoms. In this study, we used a pseudo-hydrogen passivation method to estimate the dangling bond energy and calculate the polar surfaces of ZnO and GaN. The calculations were based on the pseudo chemical potentials obtained from a set of tetrahedral clusters or simple pseudo-molecules, using density functional theory approaches. And the surface energies of (0001)/(000-1) surfaces of wurtzite ZnO and GaN we obtained showed relatively high self-consistencies. A wedge structure calculation with a new bottom surface passivation scheme of group I and group VII elements was also proposed and performed to show converged absolute surface energy of wurtzite ZnO polar surfaces, and the result we...

  8. Functionality Tuning in Vertically Aligned Nanocomposite Thin Films 

    E-Print Network [OSTI]

    Chen, Aiping

    2013-04-04

    Vertically aligned nanocomposite (VAN) oxide thin films are unique nanostructures with two-phase self-assembled, heteroepitaxially grown on single-crystal substrates. Both phases tend to grow vertically and simultaneously ...

  9. High surface area diamond-like carbon electrodes grown on vertically aligned carbon nanotubes

    E-Print Network [OSTI]

    Bristol, University of

    High surface area diamond-like carbon electrodes grown on vertically aligned carbon nanotubes H packed forests of vertically aligned multiwall carbon nanotubes (VACNTs). The DLC:VACNT composite film and high corrosion resistance [13,14]. Other type of dopants, including nickel and boron, also result

  10. 1 Film Studies FILM STUDIES

    E-Print Network [OSTI]

    Vertes, Akos

    1 Film Studies FILM STUDIES Housed in the Columbian College of Arts and Sciences, the Film Studies Program covers classical film aesthetics, surveys the history of world cinema and takes an in-depth look at films from America, France, Germany, Japan, Russia and the Hispanic world. UNDERGRADUATE Minor · Minor

  11. GaN Initiative for Grid Applications (GIGA)

    SciTech Connect (OSTI)

    Turner, George

    2015-07-03

    For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 ?m, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and vertical devices were explored, with the conclusion that lateral devices are superior for fundamental thermal reasons, as well as for the demonstration of future generations of monolithic power circuits. As part of the materials and device investigations breakdown mechanisms in GaN-on-Si structures were fully characterized and effective electric field engineering was recognized as critical for achieving even higher voltage operation. Improved device contact technology was demonstrated, including the first gold-free metallizations (to enable processing in CMOS foundries) while maintaining low specific contact resistance needed for high-power operation and 5-order-of magnitude improvement in device leakage currents (essential for high power operation). In addition, initial GaN-on-Si epitaxial growth was performed on 8”/200 mm Si starting substrates.

  12. Thermal stability of amorphous GaN1-xAsx alloys A. X. Levander,1,2

    E-Print Network [OSTI]

    Wu, Junqiao

    Thermal stability of amorphous GaN1-xAsx alloys A. X. Levander,1,2 Z. Liliental-Weber,1 R. Broesler-MBE method.10 Theoretical work has pre- dicted that amorphous GaN could be a technologically useful technological potential, es- pecially in solar energy conversion devices. In this letter we investigate

  13. First-principles studies of beryllium doping of GaN Chris G. Van de Walle* and Sukit Limpijumnong

    E-Print Network [OSTI]

    First-principles studies of beryllium doping of GaN Chris G. Van de Walle* and Sukit Limpijumnong Received 12 October 2000; published 8 June 2001 The structural and electronic properties of beryllium acceptors, and between hydrogen and substitutional beryllium. The results for wurtzite GaN are compared

  14. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys Weili Liua and Alexander A. Balandin have investigated theoretically the thermoelectric effects in wurtzite GaN crystals and AlxGa1-xN-based alloys may have some potential as thermoelectric materials at high temperature. It was found

  15. Comparative study of polar and semipolar (112?2) InGaN layers grown by metalorganic vapour phase epitaxy

    SciTech Connect (OSTI)

    Dinh, Duc V. E-mail: peter.parbrook@tyndall.ie; Zubialevich, V. Z.; Oehler, F.; Kappers, M. J.; Humphreys, C. J.; Alam, S. N.; Parbrook, P. J. E-mail: peter.parbrook@tyndall.ie; Caliebe, M.; Scholtz, F.

    2014-10-21

    InGaN layers were grown simultaneously on (112?2) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature (?750°C), the indium content (<15%) of the (112?2) and (0001) InGaN layers was similar. However, for temperatures less than 750°C, the indium content of the (112?2) InGaN layers (15%–26%) were generally lower than those with (0001) orientation (15%–32%). The compositional deviation was attributed to the different strain relaxations between the (112?2) and (0001) InGaN layers. Room temperature photoluminescence measurements of the (112?2) InGaN layers showed an emission wavelength that shifts gradually from 380 nm to 580 nm with decreasing growth temperature (or increasing indium composition). The peak emission wavelength of the (112?2) InGaN layers with an indium content of more than 10% blue-shifted a constant value of ?(50–60) nm when using higher excitation power densities. This blue-shift was attributed to band filling effects in the layers.

  16. LiNbO3 thin film growth on (0001)-GaN Peter J. Hansen

    E-Print Network [OSTI]

    York, Robert A.

    generation (SHG) or surface acoustic wave (SAW) filters. The utilization of the polar nature of LiNbO3 has, 1-11-2 Osaki, Shinagawa-ku, Tokyo 141-0032, Japan Yuan Wu Materials Department, University for application in future generation microwave power devices4­6 The extremely high charge density at the Al

  17. Ge doped GaN with controllable high carrier concentration for plasmonic applications

    SciTech Connect (OSTI)

    Kirste, Ronny; Hoffmann, Marc P.; Sachet, Edward; Bobea, Milena; Bryan, Zachary; Bryan, Isaac; Maria, Jon-Paul; Collazo, Ramón; Sitar, Zlatko [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States)] [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); Nenstiel, Christian; Hoffmann, Axel [Institut f?r Festkörperphsyik, TU-Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)] [Institut f?r Festkörperphsyik, TU-Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)

    2013-12-09

    Controllable Ge doping in GaN is demonstrated for carrier concentrations of up to 2.4?×?10{sup 20} cm{sup ?3}. Low temperature luminescence spectra from the highly doped samples reveal band gap renormalization and band filling (Burstein-Moss shift) in addition to a sharp transition. Infrared ellipsometry spectra demonstrate the existence of electron plasma with an energy around 3500?cm{sup ?1} and a surface plasma with an energy around 2000?cm{sup ?1}. These findings open possibilities for the application of highly doped GaN for plasmonic devices.

  18. High-efficiency GaAs solar cells grown by molecular-beam epitaxy

    SciTech Connect (OSTI)

    Melloch, M.R. (School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907 (USA)); Tobin, S.P. (Spire Corporation, Patriots Park, Bedford, Massachusetts 01730 (USA)); Stellwag, T.B. (School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907 (USA)); Bajgar, C. (Spire Corporation, Patriots Park, Bedford, Massachusetts 01730 (USA)); Keshavarzi, A.; Lundstrom, M.S. (School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907 (USA)); Emery, K. (Solar Energy Research Institute, Golden, Colorado 80401 (USA))

    1990-03-01

    Previously, solar cells fabricated from molecular-beam epitaxually (MBE)-grown material have been inferior in performance to those fabricated from metalorganic chemical vapor deposited (MOCVD) material. We have obtained 1-sun air mass (AM) 1.5 efficiencies of 23.8% for 0.25 cm{sup 2} GaAs solar cells fabricated on MBE-grown material. This is the first solar cell fabricated on MBE material which is of comparable performance to solar cells fabricated on MOCVD material. Details of the MBE system preparation and film growth procedure along with a detailed evaluation of the solar cells will be presented.

  19. Nanocomposite films

    DOE Patents [OSTI]

    Mitlin, David (Edmonton, CA); , Ophus, Colin (Edmonton, CA); Evoy, Stephane (Edmonton, CA); Radmilovic, Velimir (Piedmont, CA); Mohammadi, Reza (Edmonton, CA); Westra, Ken (Edmonton, CA); Nelson-Fitzpatrick, Nathaniel (Edmonton, CA); Lee, Zonghoon (Albany, CA)

    2010-07-20

    A thin-film composition of nanocrystal molybdenum in an amorphous metallic matrix may be formed by co-sputtering Mo with aluminum or nickel. NEMS cantilevers may be formed from the film. The films exhibit high nanoindentation hardness and a reduction in roughness and intrinsic stress, while maintaining resistivity in the metallic range.

  20. Learning Deep Sigmoid Belief Networks with Data Augmentation Zhe Gan Ricardo Henao David Carlson Lawrence Carin

    E-Print Network [OSTI]

    Carin, Lawrence

    Learning Deep Sigmoid Belief Networks with Data Augmentation Zhe Gan Ricardo Henao David Carlson Abstract Deep directed generative models are devel- oped. The multi-layered model is designed by stacking available datasets: MNIST, Caltech 101 Silhouettes and OCR letters. 1 Introduction The Deep Belief Network

  1. FOURIER COEFFICIENTS OF MODULAR FORMS ON G2 WEE TECK GAN, BENEDICT GROSS AND GORDAN SAVIN

    E-Print Network [OSTI]

    Gan, Wee Teck

    FOURIER COEFFICIENTS OF MODULAR FORMS ON G2 WEE TECK GAN, BENEDICT GROSS AND GORDAN SAVIN Abstract. We develop a theory of Fourier coefficients for modular forms on the split ex- ceptional group G2 on the group SL2(Z) is the wealth of information carried by the Fourier coefficients an(f), for n 0

  2. Atomic-scale studies on the growth of palladium and titanium on GaN(0001)

    E-Print Network [OSTI]

    Castell, Martin

    Atomic-scale studies on the growth of palladium and titanium on GaN(0001) C. No¨renberg a,b,*, M nitride; Palladium; Titanium; Alloys; Epitaxy; Metal­semiconductor interfaces; Nanostructures; Scanning;Here, we have focused on atomic-scale studies of the ini- tial growth stages of palladium and titanium

  3. Lattice Protein Folding With Two and Four-Body Statistical Hin Hark Gan,1

    E-Print Network [OSTI]

    Schlick, Tamar

    Lattice Protein Folding With Two and Four-Body Statistical Potentials Hin Hark Gan,1 Alexander/sequence compatibility of proteins,5,6 homology modeling,7 and protein folding simulations.8 ­10 Currently, most structures. Multibody potentials may help improve our understanding of the cooperativity of protein folding

  4. High-Efficiency X-Band MMIC GaN Power Amplifiers Operating as Rectifiers

    E-Print Network [OSTI]

    Popovic, Zoya

    High-Efficiency X-Band MMIC GaN Power Amplifiers Operating as Rectifiers Michael Litchfield, Scott two 10 x 100j.Lm power combined devices. The MMICs exhibit 67% and 56% power added efficiency at VDD a RF-to-DC efficiency of 64%. The output powers of the two MMIC PAs are around 3.2W. In rectifier mode

  5. Design and Experimental Characterization of an Erbium Doped GaN Waveguide

    E-Print Network [OSTI]

    Wang, Qian

    2012-05-31

    ABSTRACT The goal of this research was to develop an optical amplifier based on Erbium doped GaN waveguides, which can be used in the next-generation of planar integrated optic circuits. This thesis started from the basic concepts of fiber optic...

  6. Integrated Circuit Implementation for a GaN HFETs Driver Circuit

    E-Print Network [OSTI]

    Bakos, Jason D.

    @engr.sc.edu Abstract- The paper presents the design of an integrated circuit (IC) for a 10MHz low power-loss driver exploit the advantages of GaN devices, such as superior switching speed and operation in high-power the authors focus on the design of the IC and present preliminary results and considerations. The driver

  7. Room temperature hydrogen detection using Pd-coated GaN nanowires Wantae Lim,1

    E-Print Network [OSTI]

    Ural, Ant

    Room temperature hydrogen detection using Pd-coated GaN nanowires Wantae Lim,1 J. S. Wright,1 B. P vapor deposition were employed as gas sensors for detection of hydrogen at concentrations from 200­1500 ppm in N2 at 300 K. Palladium coating of the wires improved the sensitivity by a factor of up to 11

  8. Geomagnetic observatory GAN Jakub Velimsky K. Chandra Shakar Rao Lars W. Pedersen Ahmed Muslim

    E-Print Network [OSTI]

    Cerveny, Vlastislav

    ´imsk´y et al. (ETH,UK,DTU,NGRI,GMO) Geomagnetic observatory GAN 27.4.2011/KG MFF UK 1 / 16 #12;Participating, Univ. Stuttgart) John Riddick (BGS, retired) Vel´imsk´y et al. (ETH,UK,DTU,NGRI,GMO) Geomagnetic Measurements and Observatory Practice, 1996) Vel´imsk´y et al. (ETH,UK,DTU,NGRI,GMO) Geomagnetic observatory

  9. Excitation cross section of erbium-doped GaN waveguides under 980?nm optical pumping

    E-Print Network [OSTI]

    Hui, Rongqing; Xie, R.; Feng, I.-W.; Sun, Z. Y.; Lin, J. Y.; Jiang, H. X.

    2014-08-04

    Excitation cross section of erbium-doped GaN waveguides is measured to be approximately 2.2×10?21cm2 at 980?nm pumping wavelength. This cross section value is found relatively insensitive to the crystalline quality of ...

  10. Temperature dependence of thermal conductivity of AlxGa1-xN thin films measured by the differential 3 technique

    E-Print Network [OSTI]

    Engineering, University of California­Riverside, Riverside, California 92521 (Received 2 July 2004; accepted conductivity of AlxGa1-xN thin films (x=0 and 0.4) grown by the hydride vapor phase epitaxy. ThermalN thin films (x=0 and 0.4) grown by the hydride vapor phase epitaxy (HVPE). The accurate values

  11. Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN

    SciTech Connect (OSTI)

    Sintonen, Sakari, E-mail: sakari.sintonen@aalto.fi; Suihkonen, Sami; Jussila, Henri; Tuomi, Turkka O.; Lipsanen, Harri [Department of Micro- and Nanosciences, Aalto University School of Electrical Engineering, 02150 Espoo (Finland); Rudzi?ski, Mariusz [Epitaxy Department, Institute of Electronic Materials Technology, 01-919 Warsaw (Poland); Knetzger, Michael; Meissner, Elke [Fraunhofer Institute for Integrated Systems and Device Technology, 91058 Erlangen (Germany); Danilewsky, Andreas [Kristallographie Institut für Geo- und Umweltnaturwissenschaften, Albert-Ludwigs-Universität Freiburg, 79104 Freiburg (Germany)

    2014-08-28

    The crystal quality of bulk GaN crystals is continuously improving due to advances in GaN growth techniques. Defect characterization of the GaN substrates by conventional methods is impeded by the very low dislocation density and a large scale defect analysis method is needed. White beam synchrotron radiation x-ray topography (SR-XRT) is a rapid and non-destructive technique for dislocation analysis on a large scale. In this study, the defect structure of an ammonothermal c-plane GaN substrate was recorded using SR-XRT and the image contrast caused by the dislocation induced microstrain was simulated. The simulations and experimental observations agree excellently and the SR-XRT image contrasts of mixed and screw dislocations were determined. Apart from a few exceptions, defect selective etching measurements were shown to correspond one to one with the SR-XRT results.

  12. Highly mismatched crystalline and amorphous GaN(1-x)As(x) alloys in the whole composition range

    E-Print Network [OSTI]

    Yu, K. M.

    2010-01-01

    Highly Mismatched Crystalline and Amorphous GaN 1-x As xrange of 0.17crystalline outside this region.is long enough to form crystalline lattices with uniform

  13. Band alignment between GaN and ZrO{sub 2} formed by atomic layer deposition

    SciTech Connect (OSTI)

    Ye, Gang; Wang, Hong, E-mail: ewanghong@ntu.edu.sg; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong [Novitas, Nanoelectronics Center of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Liu, Zhi Hong [Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, Singapore 138602 (Singapore)

    2014-07-14

    The band alignment between Ga-face GaN and atomic-layer-deposited ZrO{sub 2} was investigated using X-ray photoelectron spectroscopy (XPS). The dependence of Ga 3d and Zr 3d core-level positions on the take-off angles indicated upward band bending at GaN surface and potential gradient in ZrO{sub 2} layer. Based on angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ?E{sub V} of 1?±?0.2?eV and conduction band discontinuity ?E{sub C} of 1.2?±?0.2?eV at ZrO{sub 2}/GaN interface were determined by taking GaN surface band bending and potential gradient in ZrO{sub 2} layer into account.

  14. Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal

    E-Print Network [OSTI]

    Ozbay, Ekmel

    between GaN and a sapphire substrate, the dislocation scattering mechanism and the electron spillover

  15. Effect of varying material anisotropy on critical current anistropy in vicinal YBa2Cu3O7-delta thin films

    E-Print Network [OSTI]

    Durrell, John H; Roessler, Roman; Delmare, Marie-Pierre; Pedarnig, Johannes; Baeuerle, Dieter; Evetts, Jan E

    2003-01-01

    on fully oxygenated and de-oxygenated YBa$_2$Cu$_3$O$_{7-\\delta}$ thin films and optimally oxygenated Y$_{0.75}$Ca$_{0.2}$Ba$_2$Cu$_3$O$_{7-\\delta}$ thin films. The films were grown on 10$^{\\circ}$ mis-cut SrTiO$_3$ substrates to enable the intrinsic vortex...

  16. Modeling of film growth by cluster deposition: The effect of size and energy K. Meinander* and K. Nordlund

    E-Print Network [OSTI]

    Nordlund, Kai

    Modeling of film growth by cluster deposition: The effect of size and energy K. Meinander* and K-assembled thin films depends heavily on the size of the deposited clusters as well as the energy with which in the density of thin films grown by deposition of clusters, with diameters between 1 and 9 nm, and at energies

  17. Studies of thin film hydrogenated silicon solar cells using electron energy-loss spectroscopy in the transmission electron microscope

    E-Print Network [OSTI]

    Dunin-Borkowski, Rafal E.

    Studies of thin film hydrogenated silicon solar cells using electron energy-loss spectroscopy (TEM) to study n-i-p thin film Si solar cells grown on steel foil or glass substrates. For a solar cell experiment, we study the chemical compositions of defective regions in thin film Si solar cells using energy

  18. Photoluminescence study of the 1.047 eV emission in GaN K. Pressela)

    E-Print Network [OSTI]

    Nabben, Reinhard

    GaN/ AlGaN blue green light emitting diode, which has a much higher quantum efficiency than the SiC blue light emitting diode, became possible.2 Presently the wide bandgap semi- conductor GaN is intensively. Especially the 1.19 eV is very intense. Thus one can think of developing a light emitting diode in the near

  19. Growth process for gallium nitride porous nanorods

    DOE Patents [OSTI]

    Wildeson, Isaac Harshman; Sands, Timothy David

    2015-03-24

    A GaN nanorod and formation method. Formation includes providing a substrate having a GaN film, depositing SiN.sub.x on the GaN film, etching a growth opening through the SiN.sub.x and into the GaN film, growing a GaN nanorod through the growth opening, the nanorod having a nanopore running substantially through its centerline. Focused ion beam etching can be used. The growing can be done using organometallic vapor phase epitaxy. The nanopore diameter can be controlled using the growth opening diameter or the growing step duration. The GaN nanorods can be removed from the substrate. The SiN.sub.x layer can be removed after the growing step. A SiO.sub.x template can be formed on the GaN film and the GaN can be grown to cover the SiO.sub.x template before depositing SiN.sub.x on the GaN film. The SiO.sub.x template can be removed after growing the nanorods.

  20. Texture evolution in nanocrystalline iron films deposited using biased magnetron sputtering

    SciTech Connect (OSTI)

    Vetterick, G.; Taheri, M. L.; Baldwin, J. K.; Misra, A.

    2014-12-21

    Fe thin films were deposited on sodium chloride (NaCl) substrates using magnetron sputtering to investigate means of texture control in free standing metal films. The Fe thin films were studied using transmission electron microscopy equipped with automated crystallographic orientation microscopy. Using this technique, the microstructure of each film was characterized in order to elucidate the effects of altering deposition parameters. The natural tendency for Fe films grown on (100) NaCl is to form a randomly oriented nanocrystalline microstructure. By careful selection of substrate and deposition conditions, it is possible to drive the texture of the film toward a single (100) orientation while retaining the nanocrystalline microstructure.

  1. Voltage controlled biaxial strain in VO{sub 2} films grown on 0.72Pb(Mg{sub 1?3}Nb{sub 2?3})-0.28PbTiO{sub 3} crystals and its effect on the transition temperature

    SciTech Connect (OSTI)

    Petraru, A., E-mail: apt@tf.uni-kiel.de; Soni, R.; Kohlstedt, H. [Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel, Kiel 24143 (Germany)

    2014-09-01

    Vanadium oxide thin films (VO{sub 2}) were deposited on 0.72Pb(Mg{sub 1?3}Nb{sub 2?3})-0.28PbTiO{sub 3} (PMN-PT) crystalline substrates using pulsed laser deposition method. Due to their huge piezoelectric coefficients in the order of 2500?pm/V, the PMN-PT substrates are used to impose additional amount of biaxial strain to the VO{sub 2} films by applying an external bias to the substrates. The influence of the biaxial strain on the transition temperature and on the conductive properties of the VO{sub 2} films is investigated in this work. Thus, a change in the biaxial strain of ?0.8?×?10{sup ?3} applied in the (110) plane of the rutile cell of the VO{sub 2} lowered the metal-to-insulator transition temperature by 1.35?°C.

  2. Properties of Inconel 625 Mesh Structures Grown by Electron Beam...

    Office of Scientific and Technical Information (OSTI)

    Properties of Inconel 625 Mesh Structures Grown by Electron Beam Additive Manufacturing Citation Details In-Document Search Title: Properties of Inconel 625 Mesh Structures Grown...

  3. Near-field microwave microscopy of high-? oxides grown on graphene with an organic seeding layer

    SciTech Connect (OSTI)

    Tselev, Alexander Kalinin, Sergei V.; Sangwan, Vinod K.; Jariwala, Deep; Lauhon, Lincoln J.; Marks, Tobin J.; Hersam, Mark C.; Department of Chemistry, Northwestern University, Evanston, Illinois 60208

    2013-12-09

    Near-field scanning microwave microscopy (SMM) is used for non-destructive nanoscale characterization of Al{sub 2}O{sub 3} and HfO{sub 2} films grown on epitaxial graphene on SiC by atomic layer deposition using a self-assembled perylene-3,4,9,10-tetracarboxylic dianhydride seeding layer. SMM allows imaging of buried inhomogeneities in the dielectric layer with a spatial resolution close to 100?nm. The results indicate that, while topographic features on the substrate surface cannot be eliminated as possible sites of defect nucleation, the use of a vertically heterogeneous Al{sub 2}O{sub 3}/HfO{sub 2} stack suppresses formation of large outgrowth defects in the oxide film, ultimately improving lateral uniformity of the dielectric film.

  4. Luminescence properties of ZnO layers grown on Si-on-insulator substrates

    SciTech Connect (OSTI)

    Kumar, Bhupendra; Gong, Hao; Vicknesh, S.; Chua, S. J.; Tripathy, S. [Department of Materials Science and Engineering, National University of Singapore, 119260 Singapore (Singapore); Institute of Materials Research and Engineering, 3 Research Link, 117602 Singapore (Singapore)

    2006-10-02

    The authors report on the photoluminescence properties of polycrystalline ZnO thin films grown on compliant silicon-on-insulator (SOI) substrates by radio frequency magnetron sputtering. The ZnO thin films on SOI were characterized by micro-Raman and photoluminescence (PL) spectroscopy. The observation of E{sub 2}{sup high} optical phonon mode near 438 cm{sup -1} in the Raman spectra of the ZnO samples represents the wurtzite crystal structure. Apart from the near-band-edge free exciton (FX) transition around 3.35 eV at 77 K, the PL spectra of such ZnO films also showed a strong defect-induced violet emission peak in the range of 3.05-3.09 eV. Realization of such ZnO layers on SOI would be useful for heterointegration with SOI-based microelectronics and microelectromechanical systems.

  5. K.K. Gan B Layer Workshop 1 Opto-Link Upgrade

    E-Print Network [OSTI]

    Gan, K. K.

    -Link Working Group/common projects #12;K.K. Gan B Layer Workshop 3 Need New Opto-Link for B Layer? opto current pixel opto-link architecture to take advantage of R&D effort and production experience #12;K: 14 x 1015 1-MeV neq/cm2 2.7 x 1015 p/cm2 or 71 Mrad for 24 GeV protons above estimates include 50

  6. GAnGS: Gather, Authenticate 'n Group Securely Chia-Hsin Owen Chen

    E-Print Network [OSTI]

    Xu, Wenyuan

    in a scalable, secure, and easy to use fashion. In this paper, we propose GAnGS, a protocol for the se- cure Factors This research was supported in part by the iCAST project under grant NSC96-3114-P-001-002-Y from or any of its agencies. Permission to make digital or hard copies of all or part of this work

  7. Formation of manganese {delta}-doped atomic layer in wurtzite GaN

    SciTech Connect (OSTI)

    Shi Meng; Chinchore, Abhijit; Wang Kangkang; Mandru, Andrada-Oana; Liu Yinghao; Smith, Arthur R.

    2012-09-01

    We describe the formation of a {delta}-doped manganese layer embedded within c-plane wurtzite gallium nitride using a special molecular beam epitaxy growth process. Manganese is first deposited on the gallium-poor GaN (0001) surface, forming a {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign reconstructed phase. This well-defined surface reconstruction is then nitrided using plasma nitridation, and gallium nitride is overgrown. The manganese content of the {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign phase, namely one Mn per each {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign unit cell, implies that the MnGaN alloy layer has a Mn concentration of up to 33%. The structure and chemical content of the surface are monitored beginning from the initial growth stage up through the overgrowth of 20 additional monolayers (MLs) of GaN. An exponential-like drop-off of the Mn signal with increasing GaN monolayers, as measured by Auger electron spectroscopy, indicates that the highly concentrated Mn layer remains at the {delta}-doped interface. A model of the resultant {delta}-doped structure is formulated based on the experimental data, and implications for possible spintronic applications are discussed.

  8. Ultrashort pulse laser deposition of thin films

    DOE Patents [OSTI]

    Perry, Michael D. (Livermore, CA); Banks, Paul S. (Livermore, CA); Stuart, Brent C. (Fremont, CA)

    2002-01-01

    Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp.sup.3 /Sp.sup.2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 .mu.m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

  9. Electrical characterization of electrochemically grown single copper nanowires

    E-Print Network [OSTI]

    Ludwig-Maximilians-Universität, München

    of a contamination layer or oxidation of the wire. Electrical measurements on electrochemically grown nanowires were

  10. High quality crystalline YBa2Cu307+ films on thin silicon substrates FL Haakenaasen

    E-Print Network [OSTI]

    Golovchenko, Jene A.

    High quality crystalline YBa2Cu307+ films on thin silicon substrates FL Haakenaasen Department) films with near perfect crystallinity have been grown epitaxially on Si(100) using two intermediate good crystallinity and be quite thin ((1 m)? Relativistic electrons are sent through the crystal

  11. Field-induced cation migration in Cu oxide films by in situ scanning tunneling microscopy

    E-Print Network [OSTI]

    Wang, Gwo-Ching

    into the oxide, and Al cations in the oxide layer rapidly diffused away.14 Field-induced ion migration substrate was cleaned by the RCA method and a thin oxide layer was grown on the Si surface. The Cu film. The formation of an oxide layer on Cu thin film was examined by x-ray photoelectron spectroscopy XPS in another

  12. Stress reduction in sputter deposited films using nanostructured compliant layers by high working-gas pressures

    E-Print Network [OSTI]

    Wang, Gwo-Ching

    Stress reduction in sputter deposited films using nanostructured compliant layers by high working October 2004; accepted 13 December 2004; published 27 June 2005 We present a strategy of stress reduction as a compliant layer to reduce the stress of the subsequently deposited continuous film grown under low gas

  13. Growth and characterization of aligned carbon nanotubes from patterned nickel nanodots and uniform thin films

    E-Print Network [OSTI]

    Reed, Mark

    Growth and characterization of aligned carbon nanotubes from patterned nickel nanodots and uniform nanotubes grown on patterned nickel nanodots and uniform thin films by plasma-enhanced chemical vapor on patterned nickel nanodots and uniform thin films is different. During growth of carbon nanotubes, a nickel

  14. Observation of standing waves at steps on the GaN,,0001... pseudo-,,11... surface by scanning tunneling spectroscopy at room temperature

    E-Print Network [OSTI]

    Li, Lian

    Observation of standing waves at steps on the GaN,,0001... pseudo-,,1Ã1... surface by scanning August 2006; published online 25 September 2006 Standing waves formed at steps of the GaN 0001 pseudo- 1, reflected elec- tron waves emerge to interfere with incoming waves to pro- duce standing waves, thus

  15. Polymer films

    DOE Patents [OSTI]

    Granick, Steve (Champaign, IL); Sukhishvili, Svetlana A. (Maplewood, NJ)

    2008-12-30

    A film contains a first polymer having a plurality of hydrogen bond donating moieties, and a second polymer having a plurality of hydrogen bond accepting moieties. The second polymer is hydrogen bonded to the first polymer.

  16. Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates

    SciTech Connect (OSTI)

    Bengoechea-Encabo, A.; Albert, S.; Barbagini, F.; Sanchez-Garcia, M. A.; Calleja, E. [ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n 28040 Madrid (Spain)] [ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n 28040 Madrid (Spain); Zuñiga-Perez, J.; Mierry, P. de [CRHEA-CNRS, 06560 Valbonne (France)] [CRHEA-CNRS, 06560 Valbonne (France); Trampert, A. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)] [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2013-12-09

    The aim of this work is the selective area growth (SAG) of GaN nanocolumns, with and without an InGaN insertion, by molecular beam epitaxyon semi-polar (11–22) GaN templates. The high density of stacking faults present in the template is strongly reduced after SAG. A dominant sharp photoluminescence emission at 3.473 eV points to high quality strain-free material. When embedding an InGaN insertion into the ordered GaN nanostructures, very homogeneous optical properties are observed, with two emissions originating from different regions of each nanostructure, most likely related to different In contents on different crystallographic planes.

  17. AFLATOXIN CONTAMINATION OF COMMERCIALLY GROWN TRANSGENIC

    E-Print Network [OSTI]

    Cotty, Peter J.

    108 AFLATOXIN CONTAMINATION OF COMMERCIALLY GROWN TRANSGENIC BT COTTONSEED P.J. Cotty and C. Bock cotton may have reduced susceptibility to aflatoxin contamination as a result of pink bollworm resistance) from one highly contaminated (>6,000 ppb aflatoxin B1) Bt seed lot indicated that most contamination

  18. Transport studies on CVD-grown graphene

    E-Print Network [OSTI]

    Huntley, Miriam Hanna

    2009-01-01

    In this thesis, we report transport studies performed on CVD-grown graphene. We perform resistivity and hall measurements on a large-area sample at 4' K. We measure the carrier mobility of the sample and find it to be on ...

  19. Ion-assisted physical vapor deposition for enhanced film properties on nonflat surfaces

    SciTech Connect (OSTI)

    Alami, J.; Persson, P.O.A.; Music, D.; Gudmundsson, J. T.; Bohlmark, J.; Helmersson, U.

    2005-03-01

    We have synthesized Ta thin films on Si substrates placed along a wall of a 2-cm-deep and 1-cm-wide trench, using both a mostly neutral Ta flux by conventional dc magnetron sputtering (dcMS) and a mostly ionized Ta flux by high-power pulsed magnetron sputtering (HPPMS). Structure of the grown films was evaluated by scanning electron microscopy, transmission electron microscopy, and atomic force microscopy. The Ta thin film grown by HPPMS has a smooth surface and a dense crystalline structure with grains oriented perpendicular to the substrate surface, whereas the film grown by dcMS exhibits a rough surface, pores between the grains, and an inclined columnar structure. The improved homogeneity achieved by HPPMS is a direct consequence of the high ion fraction of sputtered species.

  20. Tailoring the index of refraction of nanocrystalline hafnium oxide thin films

    SciTech Connect (OSTI)

    Vargas, Mirella [Department of Metallurgical and Materials Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States)] [Department of Metallurgical and Materials Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States); Murphy, N. R. [Materials and Manufacturing Directorate (RX), 3005 Hobson Way, Wright-Patterson Air Force Base (WPAFB), Dayton, Ohio 45433 (United States)] [Materials and Manufacturing Directorate (RX), 3005 Hobson Way, Wright-Patterson Air Force Base (WPAFB), Dayton, Ohio 45433 (United States); Ramana, C. V., E-mail: rvchintalapalle@utep.edu [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States)

    2014-03-10

    Hafnium oxide (HfO{sub 2}) films were grown by sputter-deposition by varying the growth temperature (T{sub s}?=?25–700?°C). HfO{sub 2} films grown at T{sub s}?grown at T{sub s}???200?°C were monoclinic, nanocrystalline with (1{sup ¯}11) texturing. X-ray reflectivity (XRR) analyses indicate that the film-density (?) increases with increasing T{sub s}. The index of refraction (n) profiles derived from spectroscopic ellipsometry analyses follow the Cauchy dispersion relation. Lorentz-Lorenz analysis (n{sub (?)}?=?550?nm) and optical-model adopted agree well with the XRR data/analyses. A direct T{sub s}-?-n relationship suggests that tailoring the optical quality is possible by tuning T{sub s} and the microstructure of HfO{sub 2} films.

  1. The impact of nanoperforation on persistent photoconductivity and optical quenching effects in suspended GaN nanomembranes

    SciTech Connect (OSTI)

    Volciuc, Olesea, E-mail: olesea.volciuc@gmail.com [Institute of Solid State Physics, University of Bremen, Bremen 28334 (Germany) [Institute of Solid State Physics, University of Bremen, Bremen 28334 (Germany); National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova, Republic of); Braniste, Tudor [National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova, Republic of)] [National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova, Republic of); Tiginyanu, Ion, E-mail: tiginyanu@asm.md [National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova, Republic of) [National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova, Republic of); Institute of Electronic Engineering and Nanotechnologies, Academy of Sciences of Moldova, Chisinau 2028 (Moldova, Republic of); Stevens-Kalceff, Marion A. [School of Physics, University of New South Wales, Sydney NSW 2052 (Australia)] [School of Physics, University of New South Wales, Sydney NSW 2052 (Australia); Ebeling, Jakob; Aschenbrenner, Timo; Hommel, Detlef; Gutowski, Jürgen [Institute of Solid State Physics, University of Bremen, Bremen 28334 (Germany)] [Institute of Solid State Physics, University of Bremen, Bremen 28334 (Germany); Ursaki, Veaceslav [Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau 2028 (Moldova, Republic of)] [Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau 2028 (Moldova, Republic of)

    2013-12-09

    We report on fabrication of suspended ?15?nm thick GaN membranes nanoperforated in an ordered fashion using direct writing of negative charges by focused ion beam and subsequent photoelectrochemical etching of GaN epilayers. Both continuous and nanoperforated membranes exhibit persistent photoconductivity (PPC), which can be optically quenched under excitation by 546?nm radiation. Optical quenching of PPC occurs also under relatively intense intrinsic excitation of nanoperforated membranes by 355?nm radiation at T?

  2. US Department of Energy (DOE)/Gosatomnadzor (GAN) of Russia project at the Petersburg Nuclear Physics Institute (PNPI)

    SciTech Connect (OSTI)

    Baranov, I.A.; Konoplev, K.A. [Petersburg Nuclear Physics Institute, Gatchina (Russian Federation); Hauser, G.C. [Sandia National Lab., Albuquerque, NM (United States)] [and others

    1997-08-01

    This paper presents a summary of work accomplished within the scope of the DOE-Gosatomnadzor (GAN) Agreement to reduce vulnerability to theft of direct-use nuclear materials in Russia. The DOE-GAN agreement concerns the Russian Academy of Science B.P. Konstantinov Petersburg Nuclear Physics Institute (PNPI), located 45 kilometers from St. Petersburg. The PNPI operates facilities to research basic nuclear physics. Current world conditions require particular attention to the issue of Material Protection, Control, and Accounting (MPC&A) of nuclear materials. The long-term plan to increase security at the facility is outlined, including training, physical protection upgrades, and material control and accountability. 4 figs.

  3. High temperature electron spin dynamics in bulk cubic GaN: Nanosecond spin lifetimes far above room-temperature

    SciTech Connect (OSTI)

    Buß, J. H.; Schaefer, A.; Hägele, D.; Rudolph, J. [Arbeitsgruppe Spektroskopie der kondensierten Materie, Ruhr-Universität Bochum, Universitätsstraße 150, D-44780 Bochum (Germany); Schupp, T.; As, D. J. [Department of Physics, University of Paderborn, Warburger Str. 100, D-33095 Paderborn (Germany)

    2014-11-03

    The electron spin dynamics in n-doped bulk cubic GaN is investigated for very high temperatures from 293?K up to 500?K by time-resolved Kerr-rotation spectroscopy. We find extraordinarily long spin lifetimes exceeding 1?ns at 500?K. The temperature dependence of the spin relaxation time is in qualitative agreement with predictions of Dyakonov-Perel theory, while the absolute experimental times are an order of magnitude shorter than predicted. Possible reasons for this discrepancy are discussed, including the role of phase mixtures of hexagonal and cubic GaN as well as the impact of localized carriers.

  4. Effect of annealing on the properties of Sb doped ZnO thin films prepared by spray pyrolysis technique

    SciTech Connect (OSTI)

    Kumar, N. Sadananda; Bangera, Kasturi V.; Shivakumar, G. K. [Thin Films Laboratory, Department of Physics, National Institute of Technology Karnataka,Surathkal - 575025, Mangalore (India)

    2014-01-28

    Sb doped ZnO thin films have been deposited on glass substrate at 450°C using spray pyrolysis technique. The X-ray diffraction studies revealed that the as deposited films are polycrystalline in nature with (100) preferred orientation. Whereas the films annealed at 450° C for 6h show a preferential orientation along (101) direction. Crystallites size varies from 15.7 nm to 34.95 nm with annealing duration. The Scanning electron microscopic analysis shows the plane and smooth surface of the films. The optical properties of annealed films have shown a variation in the band gap between 3.37 eV and 3.19 eV. Transparency of as grown and annealed films decreases from 78 % to 65% respectively in the visible region. The electrical conductivity of the as grown film shows an increase in the electrical conductivity by one order of magnitude with increase in the annealing duration.

  5. High carrier concentration p-type transparent conducting oxide films

    DOE Patents [OSTI]

    Yan, Yanfa; Zhang, Shengbai

    2005-06-21

    A p-type transparent conducting oxide film is provided which is consisting essentially of, the transparent conducting oxide and a molecular doping source, the oxide and doping source grown under conditions sufficient to deliver the doping source intact onto the oxide.

  6. Nanoscale size dependence parameters on lattice thermal conductivity of Wurtzite GaN nanowires

    SciTech Connect (OSTI)

    Mamand, S.M., E-mail: soran.mamand@univsul.net [Department of Physics, College of Science, University of Sulaimani, Sulaimanyah, Iraqi Kurdistan (Iraq); Omar, M.S. [Department of Physics, College of Science, University of Salahaddin, Arbil, Iraqi Kurdistan (Iraq)] [Department of Physics, College of Science, University of Salahaddin, Arbil, Iraqi Kurdistan (Iraq); Muhammad, A.J. [Department of Physics, College of Science, University of Kirkuk, Kirkuk (Iraq)] [Department of Physics, College of Science, University of Kirkuk, Kirkuk (Iraq)

    2012-05-15

    Graphical abstract: Temperature dependence of calculated lattice thermal conductivity of Wurtzite GaN nanowires. Highlights: Black-Right-Pointing-Pointer A modified Callaway model is used to calculate lattice thermal conductivity of Wurtzite GaN nanowires. Black-Right-Pointing-Pointer A direct method is used to calculate phonon group velocity for these nanowires. Black-Right-Pointing-Pointer 3-Gruneisen parameter, surface roughness, and dislocations are successfully investigated. Black-Right-Pointing-Pointer Dislocation densities are decreases with the decrease of wires diameter. -- Abstract: A detailed calculation of lattice thermal conductivity of freestanding Wurtzite GaN nanowires with diameter ranging from 97 to 160 nm in the temperature range 2-300 K, was performed using a modified Callaway model. Both longitudinal and transverse modes are taken into account explicitly in the model. A method is used to calculate the Debye and phonon group velocities for different nanowire diameters from their related melting points. Effect of Gruneisen parameter, surface roughness, and dislocations as structure dependent parameters are successfully used to correlate the calculated values of lattice thermal conductivity to that of the experimentally measured curves. It was observed that Gruneisen parameter will decrease with decreasing nanowire diameters. Scattering of phonons is assumed to be by nanowire boundaries, imperfections, dislocations, electrons, and other phonons via both normal and Umklapp processes. Phonon confinement and size effects as well as the role of dislocation in limiting thermal conductivity are investigated. At high temperatures and for dislocation densities greater than 10{sup 14} m{sup -2} the lattice thermal conductivity would be limited by dislocation density, but for dislocation densities less than 10{sup 14} m{sup -2}, lattice thermal conductivity would be independent of that.

  7. Comparison of topotactic fluorination methods for complex oxide films

    SciTech Connect (OSTI)

    Moon, E. J. Choquette, A. K.; Huon, A.; Kulesa, S. Z.; May, S. J.; Barbash, D.

    2015-06-01

    We have investigated the synthesis of SrFeO{sub 3??}F{sub ?} (? and ? ? 1) perovskite films using topotactic fluorination reactions utilizing poly(vinylidene fluoride) as a fluorine source. Two different fluorination methods, a spin-coating and a vapor transport approach, were performed on as-grown SrFeO{sub 2.5} films. We highlight differences in the structural, compositional, and optical properties of the oxyfluoride films obtained via the two methods, providing insight into how fluorination reactions can be used to modify electronic and optical behavior in complex oxide heterostructures.

  8. Journal of Crystal Growth 310 (2008) 23202325 Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown

    E-Print Network [OSTI]

    Gilchrist, James F.

    2008-01-01

    -based blue­green­red LEDs will result in energy-efficient and low-cost approach for the white-light LEDs as the active media for light-emitting diodes (LEDs) and semiconductor laser diodes for green emission. r 2008-emitting diodes (LEDs) to excite the yellow-green and red phosphors, thus resulting in broadband visible white

  9. Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

    E-Print Network [OSTI]

    Corfdir, Pierre; Dussaigne, Amélie; Teisseyre, Henryk; Suski, Tadeusz; Grzegory, Izabella; Lefebvre, Pierre; Giraud, Etienne; Shahmohammadi, Mehran; Phillips, Richard; Ganière, Jean-Daniel; Grandjean, Nicolas; Deveaud, Benoît

    -Daniel Ganiere1, Nicolas Grandjean1, and Beno?ˆt Deveaud1 1Institute of Condensed Matter Physics, Ecole Polytechnique Fe´de´rale de Lausanne, 1015 Lausanne, Switzerland 2Cavendish Laboratory, University of Cambridge, CB3 0HE Cambridge, United Kingdom 3Institute... of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland 4Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland 5CNRS, Laboratoire Charles Coulomb, UMR5221, 34095 Montpellier, France E-mail: pmc53@cam.ac.uk Received...

  10. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  11. Ferromagnetism of manganese-doped indium tin oxide films deposited on polyethylene naphthalate substrates

    SciTech Connect (OSTI)

    Nakamura, Toshihiro; Isozaki, Shinichi; Tanabe, Kohei; Tachibana, Kunihide

    2009-04-01

    Mn-doped indium tin oxide (ITO) films were deposited on polyethylene naphthalate (PEN) substrates using radio-frequency magnetron sputtering. The magnetic, electrical, and optical properties of the films deposited on PEN substrates were investigated by comparing with the properties of films grown on glass substrates at the same growth conditions. Thin films on PEN substrates exhibited low electrical resistivity of the order of 10{sup -4} {omega} cm and high optical transmittance between 75% and 90% in the visible region. Ferromagnetic hysteresis loops were observed at room temperature for the samples grown on PEN substrates. Mn-doped ITO films can be one of the most promising candidates of transparent ferromagnetic materials for flexible spintronic devices.

  12. High Quality, Low Cost Bulk Gallium Nitride Substrates Grown...

    Broader source: Energy.gov (indexed) [DOE]

    Project deliverables Reproducible monocrystalline growth process with sustainable film growth rate of at least 0.5mmhr scalable to >100mm substrate diameter and film...

  13. Films of bacteria at interfaces: three stages of behaviour

    E-Print Network [OSTI]

    Liana Vaccari; Daniel Allan; Nima Sharifi-Mood; Aayush Singh; Robert Leheny; Kathleen Stebe

    2015-03-25

    Bacterial attachment to a fluid interface can lead to the formation of a film with physicochemical properties that evolve with time. We study the time evolution of interface (micro)mechanics for interfaces between oil and bacterial suspensions by following the motion of colloidal probes trapped by capillarity to determine the interface microrheology. Initially, active bacteria at and near the interface drive superdiffusive motion of the colloidal probes. Over timescales of minutes, the bacteria form a viscoelastic film which we discuss as a quasi-two-dimensional, active, glassy system. To study late stage mechanics of the film, we use pendant drop elastometry. The films, grown over tens of hours on oil drops, are expanded and compressed by changing the drop volume. For small strains, by modeling the films as 2D Hookean solids, we estimate the film elastic moduli, finding values similar to those reported in the literature for the bacteria themselves. For large strains, the films are highly hysteretic. Finally, from wrinkles formed on highly compressed drops, we estimate film bending energies. The dramatic restructuring of the interface by such robust films has broad implications, e.g. in the study of active colloids, in understanding the community dynamics of bacteria, and in applied settings including bioremediation.

  14. Wet chemical synthesis of quantum confined nanostructured tin oxide thin films by successive ionic layer adsorption and reaction technique

    SciTech Connect (OSTI)

    Murali, K.V., E-mail: kvmuralikv@gmail.com [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Nehru Arts and Science College, Kanhangad, Kerala 671314 (India); Ragina, A.J. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Nehru Arts and Science College, Kanhangad, Kerala 671314 (India); Preetha, K.C. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Sree Narayana College, Kannur, Kerala 670007 (India); Deepa, K.; Remadevi, T.L. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Pazhassi Raja N.S.S. College, Mattannur, Kerala 670702 (India)

    2013-09-01

    Graphical abstract: - Highlights: • Quantum confined SnO{sub 2} thin films were synthesized at 80 °C by SILAR technique. • Film formation mechanism is discussed. • Films with snow like crystallite morphology offer high specific surface area. • The blue-shifted value of band gap confirmed the quantum confinement effect. • Present synthesis has advantages – low cost, low temperature and green friendly. - Abstract: Quantum confined nanostructured SnO{sub 2} thin films were synthesized at 353 K using ammonium chloride (NH{sub 4}Cl) and other chemicals by successive ionic layer adsorption and reaction technique. Film formation mechanism is discussed. Structural, morphological, optical and electrical properties were investigated and compared with the as-grown and annealed films fabricated without NH{sub 4}Cl solution. SnO{sub 2} films were polycrystalline with crystallites of tetragonal structure with grain sizes lie in the 5–8 nm range. Films with snow like crystallite morphology offer high specific surface area. The blue-shifted value of band gap of as-grown films confirmed the quantum confinement effect of grains. Refractive index of the films lies in the 2.1–2.3 range. Films prepared with NH{sub 4}Cl exhibit relatively lower resistivity of the order of 10{sup 0}–10{sup ?1} ? cm. The present synthesis has advantages such as low cost, low temperature and green friendly, which yields small particle size, large surface–volume ratio, and high crystallinity SnO{sub 2} films.

  15. Tunable giant magnetic anisotropy in amorphous SmCo thin films

    SciTech Connect (OSTI)

    Magnus, F.; Moubah, R.; Roos, A. H.; Kapaklis, V.; Hjoervarsson, B.; Andersson, G.; Kruk, A.; Hase, T.

    2013-04-22

    SmCo thin films have been grown by magnetron sputtering at room temperature with a composition of 2-35 at. % Sm. Films with 5 at. % or higher Sm are amorphous and smooth. A giant tunable uniaxial in-plane magnetic anisotropy is induced in the films which peaks in the composition range 11-22 at. % Sm. This cross-over behavior is not due to changes in the atomic moments but rather the local configuration changes. The excellent layer perfection combined with highly tunable magnetic properties make these films important for spintronics applications.

  16. Ferroelectric ultrathin perovskite films

    DOE Patents [OSTI]

    Rappe, Andrew M; Kolpak, Alexie Michelle

    2013-12-10

    Disclosed herein are perovskite ferroelectric thin-film. Also disclosed are methods of controlling the properties of ferroelectric thin films. These films can be used in a variety materials and devices, such as catalysts and storage media, respectively.

  17. Multilayer thin film thermoelectrics produced by sputtering

    SciTech Connect (OSTI)

    Wagner, A.V.; Foreman, R.J.; Summers, L.J.; Barbee, T.W. Jr.; Farmer, J.C.

    1995-06-19

    In this work we explore the possibility of achieving bulk electrical properties in single layer sputter deposited films grown epitaxially on (111) oriented BaF{sub 2} substrates. There are a number of sputter deposition parameters that can be varied in order to optimize the film quality. It is important to understand the effect of varying the deposition temperature, Ar sputtering gas pressure, and the substrate bias. We will consider only Bi and Bi{sub 0.86}Sb{sub 0.14} films in this paper. These materials were chosen since they have the same simple structure, two different band gaps and do not change significantly either in physical or electrical properties with small amounts of cross contamination. We will also present our work on multilayer thermoelectrics made of Bi and Bi{sub 0.86}Sb{sub 0.14} layers. There has been considerable interest in this multilayer structure in the literature. Theoretical calculations of the band structure and interface states of these multilayer structures have been made by Mustafaev and Agassi et al. respectively [6,7]. Experimentally Yoshida et al. have examined similar multilayer structures grown by MBE as well as Bi/Sb multilayer samples in which report an anomalous thermoelectric power [8].

  18. Magnetization dynamics of cobalt grown on graphene

    SciTech Connect (OSTI)

    Berger, A. J.; White, S. P.; Adur, R.; Pu, Y.; Hammel, P. C.; Amamou, W.; Kawakami, R. K.

    2014-05-07

    Ferromagnetic resonance (FMR) spin pumping is a rapidly growing field which has demonstrated promising results in a variety of material systems. This technique utilizes the resonant precession of magnetization in a ferromagnet to inject spin into an adjacent non-magnetic material. Spin pumping into graphene is attractive on account of its exceptional spin transport properties. This article reports on FMR characterization of cobalt grown on chemical vapor deposition graphene and examines the validity of linewidth broadening as an indicator of spin pumping. In comparison to cobalt samples without graphene, direct contact cobalt-on-graphene exhibits increased FMR linewidth—an often used signature of spin pumping. Similar results are obtained in Co/MgO/graphene structures, where a 1?nm MgO layer acts as a tunnel barrier. However, magnetometry, magnetic force microscopy, and Kerr microscopy measurements demonstrate increased magnetic disorder in cobalt grown on graphene, perhaps due to changes in the growth process and an increase in defects. This magnetic disorder may account for the observed linewidth enhancement due to effects such as two-magnon scattering or mosaicity. As such, it is not possible to conclude successful spin injection into graphene from FMR linewidth measurements alone.

  19. Hot filament CVD of boron nitride films

    DOE Patents [OSTI]

    Rye, Robert R. (Albuquerque, NM)

    1992-01-01

    Using a hot filament (.apprxeq.1400.degree. C.) to activate borazine (B.sub.3 N.sub.3 H.sub.6) molecules for subsequent reaction with a direct line-of-sight substrate, transparent boron ntiride films as thick as 25,000 angstroms are grown for a substrate temperature as low as 100.degree. C. The minimum temperature is determined by radiative heating from the adjacent hot filament. The low temperature BN films show no indication of crystallinity with X-ray diffraction (XRD). X-ray photoelectron spectra (XPS) show the films to have a B:N ratio of 0.97:1 with no other XPS detectable impurities above the 0.5% level. Both Raman and infrared (IR) spectroscopy are characteristic of h-BN with small amounts of hydrogen detected as N-H and B-H bands in the IR spectrum. An important feature of this method is the separation and localization of the thermal activation step at the hot filament from the surface reaction and film growth steps at the substrate surface. This allows both higher temperature thermal activation and lower temperature film growth.

  20. Ferromagnetic response of multiferroic TbMnO{sub 3} films mediated by epitaxial strain and chemical pressure

    SciTech Connect (OSTI)

    Izquierdo, J.; Morán, O.; Astudillo, A.; Bolaños, G.; Arnache, O.

    2014-05-07

    High quality Tb{sub 1?x}Al{sub x}MnO{sub 3} (x?=?0, 0.3) films have been grown under different values of compressive/tensile strain using (001)-oriented SrTiO{sub 3} and MgO substrates. The films were grown by means of rf sputtering at substrate temperature of 800??°C. X-ray diffraction analysis shows that films are single phase, preferentially oriented in the (111) and (122) directions for films deposited on SrTiO{sub 3} and MgO substrates, respectively. Although the TbMnO{sub 3} target shows antiferromagnetic order, the films deposited on both substrates show weak ferromagnetic phase at low temperature coexisting with the antiferromagnetic phase. The introduction of Al in the films clearly enhances their ferromagnetic behavior, improving the magnetic performance of this material. Indeed, M(H) measurements at 5?K show a well-defined hysteresis for films grown on both substrates. However, a stronger magnetic signal (larger values of remanence and coercive field) is observed for films deposited on MgO substrates. The chemical pressure generated by Al doping together with the substrate-induced strain seem to modify the subtle competition between magnetic interactions in the system. It is speculated that such modification could lead to a non-collinear magnetic state that may be tuned by strain modifications. This may be performed by varying the thickness of the films and/or considering other substrate materials.

  1. Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112{sup ¯}2) semipolar versus (0001) polar planes

    SciTech Connect (OSTI)

    Ji, Yun; Liu, Wei; Chen, Rui; Tiam Tan, Swee; Zhang, Zi-Hui; Ju, Zhengang; Zhang, Xueliang; Sun, Handong; Wei Sun, Xiao; Erdem, Talha; Zhao, Yuji; DenBaars, Steven P. E-mail: volkan@stanfordalumni.org; Nakamura, Shuji; Volkan Demir, Hilmi E-mail: volkan@stanfordalumni.org

    2014-04-07

    The characteristics of electroluminescence (EL) and photoluminescence (PL) emission from GaN light-emitting diodes (LEDs) grown on (112{sup ¯}2) semipolar plane and (0001) polar plane have been comparatively investigated. Through different bias-dependent shifting trends observed from the PL and time-resolved PL spectra (TRPL) for the two types of LEDs, the carrier dynamics within the multiple quantum wells (MQWs) region is systematically analyzed and the distinct field-dependent emission kinetics are revealed. Moreover, the polarization induced internal electric field has been deduced for each of the LEDs. The relatively stable emission behavior observed in the semipolar LED is attributed to the smaller polarization induced internal electric field. The study provides meaningful insight for the design of quantum well (QW) structures with high radiative recombination rates.

  2. Structural and Morphological Difference Between Ti/TiN/TiCN Coatings Grown in Multilayer and Graded Form

    SciTech Connect (OSTI)

    Restrepo, E.; Baena, A.; Agudelo, C.; Castillo, H.; Devia, A.; Marino, A.

    2006-12-04

    Thin films can be grown in super-lattice, multilayers and graded form, having each one advantages and disadvantages. The difference between multilayer and graded coatings is the interface. In multilayers the interface is abrupt and in graded coatings it is diffuse. The interface influences many chemical and physical properties of the materials, and its choice depends on the application. Graded coatings have the advantage of having gradual properties such as thermal expansion coefficient and lattice parameter, avoiding adherence problems due to good match between their component materials. In this work the comparison between some properties of coatings grown as multilayer and graded is performed. The materials are produced using the sputtering DC technique because of its facility to control the deposition parameters and generate a slow growth. The target is a disc of titanium and the samples are made of stainless steel 304. The working gases are argon, nitrogen and methane, which are mixed according to the material to be produced, i.e. Ti layer is grown with argon, the TiN film is produced with a mixture of argon and nitrogen, and the TiCN material is obtained mixing argon, nitrogen and methane. These materials are characterized with AFM in order to determine grain size and with XPS studying the chemical composition and performing depth profiles.

  3. (001) Oriented piezoelectric films prepared by chemical solution deposition on Ni foils

    SciTech Connect (OSTI)

    Yeo, Hong Goo, E-mail: hxy162@psu.edu; Trolier-McKinstry, Susan [Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    Flexible metal foil substrates are useful in some microelectromechanical systems applications including wearable piezoelectric sensors or energy harvesters based on Pb(Zr,Ti)O? (PZT) thin films. Full utilization of the potential of piezoelectrics on metal foils requires control of the film crystallographic texture. In this study, (001) oriented PZT thin films were grown by chemical solution deposition (CSD) on Ni foil and Si substrates. Ni foils were passivated using HfO? grown by atomic layer deposition in order to suppress substrate oxidation during subsequent thermal treatment. To obtain the desired orientation of PZT film, strongly (100) oriented LaNiO? films were integrated by CSD on the HfO? coated substrates. A high level of (001) LaNiO? and PZT film orientation were confirmed by X-ray diffraction patterns. Before poling, the low field dielectric permittivity and loss tangents of (001) oriented PZT films on Ni are near 780 and 0.04 at 1 kHz; the permittivity drops significantly on poling due to in-plane to out-of-plane domain switching. (001) oriented PZT film on Ni displayed a well-saturated hysteresis loop with a large remanent polarization ~36 ?C/cm², while (100) oriented PZT on Si showed slanted P-E hysteresis loops with much lower remanent polarizations. The |e{sub 31,f}| piezoelectric coefficient was around 10.6 C/m² for hot-poled (001) oriented PZT film on Ni.

  4. Efficient Switches for Solar Power Conversion: Four Quadrant GaN Switch Enabled Three Phase Grid-Tied Microinverters

    SciTech Connect (OSTI)

    2012-02-13

    Solar ADEPT Project: Transphorm is developing power switches for new types of inverters that improve the efficiency and reliability of converting energy from solar panels into useable electricity for the grid. Transistors act as fast switches and control the electrical energy that flows in an electrical circuit. Turning a transistor off opens the circuit and stops the flow of electrical current; turning it on closes the circuit and allows electrical current to flow. In this way a transistor can be used to convert DC from a solar panel into AC for use in a home. Transphorm’s transistors will enable a single semiconductor device to switch electrical currents at high-voltage in both directions—making the inverter more compact and reliable. Transphorm is using Gallium Nitride (GaN) as a semiconductor material in its transistors instead of silicon, which is used in most conventional transistors, because GaN transistors have lower losses at higher voltages and switching frequencies.

  5. Laser Focus World highlights Kaminski's home-grown ARPES spectroscopy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laser Focus World highlights Kaminski's home-grown ARPES spectroscopy system Laser Focus World senior editor Gail Overton wrote a story on angled-resolved photo-emission...

  6. X-Band MMIC GaN Power Amplifiers Designed for High-Efficiency Supply-Modulated Transmitters

    E-Print Network [OSTI]

    Popovic, Zoya

    MMICs that utilize 0.15 µm GaN on SiC process technology are presented. Under continuous wave operating. Process Technology and Model The MMICs were fabricated in a 0.15 µm gate length process with an Al are Imax=1.15 A/mm, gm,max=380 mS/mm, and 3.5 V pinch-off at Vds=10 V. Device breakdown voltage exceeds 50

  7. ReportTechnical Image -Film -Discourse / Bild -Film -Diskurs

    E-Print Network [OSTI]

    ReportTechnical 68 Image - Film - Discourse / Bild - Film - Diskurs John Bateman Marion G. Müller ­ Film ­ Discourse / Bild ­ Film ­ Diskurs Final Report of the BMBF-funded cooperation project Bild­Film-funded cooperation project Bild­Film­Diskurs (Image­Film­Discourse). The interpretation and analysis of images

  8. EL INCIDENTE Film Screening

    E-Print Network [OSTI]

    EL INCIDENTE Film Screening A PART OF THE "SAWYER SEMINAR ON ALTERNATIVE FUTURISMS" Director Isaac Ezban's science fiction and horror films have been well received at international film festivals, with his first feature length film El Incidente winning awards for Best Original Screenplay for a Feature

  9. Film Studies Degree options

    E-Print Network [OSTI]

    Brierley, Andrew

    102 Film Studies Degree options MA (Joint Honours Degrees) Film Studies and one of: Ancient History Anthropology SpanishW Theological Studies FilmStudieswww.st-andrews.ac.uk/filmstudies Features * The Department of Film Studies consistently receives excellent ratings of student satisfaction in course evaluations

  10. Film Studies Degree options

    E-Print Network [OSTI]

    Brierley, Andrew

    94 Film Studies Degree options MA (Single Honours Degrees) Film Studies MA (Joint Honours Degrees) Film Studies and one of: Ancient History Arabic Art History Biblical Studies Classical Studies Philosophy Psychology RussianW Scottish History Social Anthropology SpanishW Theological Studies Film

  11. TEM characterization of nanodiamond thin films.

    SciTech Connect (OSTI)

    Qin, L.-C.; Zhou, D.; Krauss, A. R.; Gruen, D. M.; Chemistry

    1998-05-01

    The microstructure of thin films grown by microwave plasma-enhanced chemical vapor deposition (MPCVD) from fullerene C{sub 60} precursors has been characterized by scanning electron microscopy (SEM), selected-area electron diffraction (SAED), bright-field electron microscopy, high-resolution electron microscopy (HREM), and parallel electron energy loss spectroscopy (PEELS). The films are composed of nanosize crystallites of diamond, and no graphitic or amorphous phases were observed. The diamond crystallite size measured from lattice images shows that most grains range between 3-5 nm, reflecting a gamma distribution. SAED gave no evidence of either sp2-bonded glassy carbon or sp3-bonded diamondlike amorphous carbon. The sp2-bonded configuration found in PEELS was attributed to grain boundary carbon atoms, which constitute 5-10% of the total. Occasionally observed larger diamond grains tend to be highly faulted.

  12. Process for forming silicon carbide films and microcomponents

    DOE Patents [OSTI]

    Hamza, Alex V. (Livermore, CA); Balooch, Mehdi (Berkeley, CA); Moalem, Mehran (Berkeley, CA)

    1999-01-01

    Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

  13. Magneto-optical characterizations of FeTe???Se??? thin films with critical current density over 1 MA/cm²

    SciTech Connect (OSTI)

    Sun, Yue; Li, Qiang; Tsuchiya, Yuji; Pyon, Sunseng; Tamegai, Tsuyoshi; Zhang, Cheng; Ozaki, Toshinori

    2015-01-01

    We performed magneto-optical (MO) measurements on FeTe???Se??? thin films grown on LaAlO? (LAO) and Yttria-stabilized zirconia (YSZ) single-crystalline substrates. These thin films show superconducting transition temperature Tc ~19 K, 4 K higher than the bulk sample. Typical roof-top patterns can be observed in the MO images of thin films grown on LAO and YSZ, from which a large and homogeneous critical current density Jc ~ 3 - 4 x 10? A/cm² at 5 K was obtained. Magnetic flux penetration measurement reveals that the current is almost isotropically distributed in the two thin films. Compared with bulk crystals, FeTe???Se??? thin film demonstrates not only higher Tc, but also much larger Jc, which is attractive for applications.

  14. Magneto-optical characterizations of FeTe???Se??? thin films with critical current density over 1 MA/cm²

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sun, Yue; Li, Qiang; Tsuchiya, Yuji; Pyon, Sunseng; Tamegai, Tsuyoshi; Zhang, Cheng; Ozaki, Toshinori

    2014-12-03

    We performed magneto-optical (MO) measurements on FeTe???Se??? thin films grown on LaAlO? (LAO) and Yttria-stabilized zirconia (YSZ) single-crystalline substrates. These thin films show superconducting transition temperature Tc ~19 K, 4 K higher than the bulk sample. Typical roof-top patterns can be observed in the MO images of thin films grown on LAO and YSZ, from which a large and homogeneous critical current density Jc ~ 3 - 4 x 10? A/cm² at 5 K was obtained. In this study, magnetic flux penetration measurement reveals that the current is almost isotropically distributed in the two thin films. Compared with bulk crystals,more »FeTe???Se??? thin film demonstrates not only higher Tc, but also much larger Jc, which is attractive for applications.« less

  15. “Femme/s, Film/s, Noir/e: Revisions”

    E-Print Network [OSTI]

    Stulman, Valerie

    2007-01-01

    G. “ No Way Out: Existential Motifs in the Film Noir. ”Film Noir Reader. Ed. Alain Silver and James Ursini.Alain. “Introduction. ” Film Noir Reader. Ed. Alain Silver

  16. Correlation Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeOx) Films

    SciTech Connect (OSTI)

    Murphy, Neil R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, Chintalapalle V.

    2014-03-18

    Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, ? = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing ? from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of ? is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (?) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (? = 550 nm) to 2.62 and occurs at ? = 0.25. Finally n drops to 1.60 for ? = 0.50–1.00, where the films become GeO2. A detailed correlation between ?, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

  17. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

    SciTech Connect (OSTI)

    Guo, Wei, E-mail: wguo2@ncsu.edu; Bryan, Zachary; Kirste, Ronny; Bryan, Isaac; Hussey, Lindsay; Bobea, Milena; Haidet, Brian; Collazo, Ramón; Sitar, Zlatko [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); Xie, Jinqiao; Mita, Seiji [HexaTech, Inc., 991 Aviation Pkwy, Suite 800, Morrisville, North Carolina 27560 (United States); Gerhold, Michael [Engineering Science Directorate, Army Research Office, P.O. BOX 12211, Research Triangle Park, North Carolina 27703 (United States)

    2014-03-14

    Optical gain spectra for ?250?nm stimulated emission were compared in three different AlGaN-based structures grown on single crystalline AlN substrates: a single AlGaN film, a double heterostructure (DH), and a Multiple Quantum Well (MQW) structure; respective threshold pumping power densities of 700, 250, and 150?kW/cm{sup 2} were observed. Above threshold, the emission was transverse-electric polarized and as narrow as 1.8?nm without a cavity. The DH and MQW structures showed gain values of 50–60?cm{sup ?1} when pumped at 1?MW/cm{sup 2}. The results demonstrated the excellent optical quality of the AlGaN-based heterostructures grown on AlN substrates and their potential for realizing electrically pumped sub-280?nm laser diodes.

  18. Density dependence of the room temperature thermal conductivity of atomic layer deposition-grown amorphous alumina (Al{sub 2}O{sub 3})

    SciTech Connect (OSTI)

    Gorham, Caroline S.; Gaskins, John T.; Hopkins, Patrick E.; Parsons, Gregory N.; Losego, Mark D.

    2014-06-23

    We report on the thermal conductivity of atomic layer deposition-grown amorphous alumina thin films as a function of atomic density. Using time domain thermoreflectance, we measure the thermal conductivity of the thin alumina films at room temperature. The thermal conductivities vary ?35% for a nearly 15% change in atomic density and are substrate independent. No density dependence of the longitudinal sound speeds is observed with picosecond acoustics. The density dependence of the thermal conductivity agrees well with a minimum limit to thermal conductivity model that is modified with a differential effective-medium approximation.

  19. Strain Induced Magnetism in SrRuO3 Epitaxial Thin Films

    SciTech Connect (OSTI)

    Grutter, A.; Wong, F.; Arenholz, E.; Liberati, M.; Suzuki, Y.

    2010-01-10

    Epitaxial SrRuO{sub 3} thin films were grown on SrTiO{sub 3}, (LaAlO{sub 3}){sub 0.3}(SrAlO{sub 3}){sub 0.7} and LaAlO{sub 3} substrates inducing different biaxial compressive strains. Coherently strained SrRuO{sub 3} films exhibit enhanced magnetization compared to previously reported bulk and thin film values of 1.1-1.6 {micro}{sub B} per formula unit. A comparison of (001) and (110) SrRuO{sub 3} films on each substrate indicates that films on (110) oriented have consistently higher saturated moments than corresponding (001) films. These observations indicate the importance of lattice distortions in controlling the magnetic ground state in this transitional metal oxide.

  20. High sensitive formaldehyde graphene gas sensor modified by atomic layer deposition zinc oxide films

    SciTech Connect (OSTI)

    Mu, Haichuan; Zhang, Zhiqiang; Wang, Keke; Xie, Haifen, E-mail: hfxie@ecust.edu.cn [Department of Physics, School of Science, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237 (China); Zhao, Xiaojing; Liu, Feng [Department of Physics, Shanghai Normal University, 100 Guilin Road, Shanghai 200234 (China)

    2014-07-21

    Zinc oxide (ZnO) thin films with various thicknesses were fabricated by Atomic Layer Deposition on Chemical Vapor Deposition grown graphene films and their response to formaldehyde has been investigated. It was found that 0.5?nm ZnO films modified graphene sensors showed high response to formaldehyde with the resistance change up to 52% at the concentration of 9 parts-per-million (ppm) at room temperature. Meanwhile, the detection limit could reach 180 parts-per-billion (ppb) and fast response of 36?s was also obtained. The high sensitivity could be attributed to the combining effect from the highly reactive, top mounted ZnO thin films, and high conductive graphene base network. The dependence of ZnO films surface morphology and its sensitivity on the ZnO films thickness was also investigated.

  1. The Morphology and Microstructure of Thin-Film GaAs on Mo Substrates

    SciTech Connect (OSTI)

    Jones, K. M.; Al-Jassim, M. M.; Hasoon, F. S.; Venkatasubramanian, R.

    1999-04-26

    The growth of GaAs thin films on Molybdenum foils was investigated in an attempt to find a low-cost substrate for GaAs. The films were grown by metalorganic chemical vapor deposition (MOCVD). The film thickness was in the 2-4{micro}m range, while the deposition temperature was in the 650-825 C range. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to investigate the film morphology and microstructure, respectively. The film morphology in general, and the grain size in particular, were found to be strongly dependent on the growth temperature. However, the defect structure observed in these films was relatively insensitive to the growth conditions.

  2. Direct band gap optical emission from Ge islands grown on relaxed Si{sub 0.5}Ge{sub 0.5}/Si (100) substrate

    SciTech Connect (OSTI)

    Aluguri, R.; Manna, S.; Ray, S. K., E-mail: physkr@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)

    2014-01-07

    Strained Ge islands have been grown on fully relaxed Si{sub 0.5}Ge{sub 0.5} substrate by pulsed laser ablation technique. The formation of strained Ge islands has been found for film with higher thickness following Stranski–Krastanov growth mechanism. The variation of strain with changing Ge layer thickness has been analyzed using Raman spectroscopy and high-resolution X-ray diffraction techniques. X-ray photoelectron spectra have shown the absence of any Si-Ge intermixing and oxidation of Ge films. A strong no-phonon photoluminescence emission from Ge islands has been observed, showing the superior optical characteristics of the islands grown on relaxed substrate.

  3. Influence of nanostructure on charge transport in RuO{sub 2} thin films

    SciTech Connect (OSTI)

    Steeves, M. M.; Lad, R. J.

    2010-07-15

    Polycrystalline thin films of RuO{sub 2} were grown on fused-quartz substrates and a parametric study was carried out to probe the influence of film nanostructure on the four-point Van der Pauw resistivity and Hall coefficient. The films were grown via reactive rf magnetron sputtering of a Ru target in an Ar/O{sub 2} plasma using deposition rates from 0.27 to 3.5 A/s and substrate temperatures from 16 to 500 deg. C Room-temperature resistivities of the RuO{sub 2} films ranged from 58 to 360 {mu}{Omega} cm. Upon first heating following deposition, some films showed decreasing resistivity with increasing temperature, but the resistivities also decreased upon subsequent cooling suggesting that the annealing treatment reduces the film defect density. The temperature coefficient of resistance was found to be small (<0.001 K{sup -1}) in agreement with previous investigations. Hall coefficient measurements of the polycrystalline thin films demonstrated that either n-type or p-type majority carriers can be present depending on deposition conditions and the resulting nanostructure, in contrast to single-crystal RuO{sub 2}, which is an n-type metal. Grain size and homogeneous strain within the films were measured by x-ray diffraction and are correlated to the majority carrier type.

  4. Microstructure investigations of hcp phase CoPt thin films with high coercivity

    SciTech Connect (OSTI)

    Yang, Y.; Varghese, B.; Tan, H. K.; Wong, S. K.; Piramanayagam, S. N.

    2014-02-28

    CoPt films have been grown in the past with a high anisotropy in L1{sub 1} or L1{sub 0} phase, and a high coercivity is observed only in L1{sub 0} CoPt films. Recently, we have grown CoPt films which exhibited a high coercivity without exhibiting an ordered phase. In this study, high resolution transmission electron microscopy (HRTEM) investigations have been carried out to understand the strong thickness and deposition pressure dependent magnetic properties. HRTEM studies revealed the formation of an initial growth layer in a metastable hexagonal (hcp) CoPt with high anisotropy. This phase is believed to be aided by the heteroepitaxial growth on Ru as well as the formation of Ru-doped CoPt phase. As the films grew thicker, transformation from hcp phase to an energetically favourable face-centered cubic (fcc) phase was observed. Stacking faults were found predominantly at the hcp-fcc transformation region of the CoPt film. The higher coercivity of thinner CoPt film is attributed to relatively less fcc fraction, less stacking faults, and to the isolated grain structure of these films compared to the thicker films.

  5. Low resistance ohmic contacts on wide band-gap GaN M. E. Lin, Z. Ma, F. Y. Huang, Z. F. Fan, L. H. Allen, and H. MorkoG

    E-Print Network [OSTI]

    Allen, Leslie H.

    -beam evaporation onto the GaN substrate, and then thermally annealed in a temperature range from 500 to 900 "C as high temperature/high power electrical devices, there still remains much more work to be done on GaN epilayers, Foresi et aL6 used Al and Au contacts with 575 "C anneal cycle. However, the specific

  6. Modeling of electronic transport in GaN n-i-p junctions Laboratoire de Physique du Solide, Facults Universitaires Notre-Dame de la Paix, Rue de Bruxelles 61,

    E-Print Network [OSTI]

    Mayer, Alexandre

    Modeling of electronic transport in GaN n-i-p junctions A. Mayera) Laboratoire de Physique du) We propose a model and an algorithm for computing the transport properties of GaN n-i-p devices as cold cathodes2,3 or thermoelectric coolers.4­8 For applications as electronic emitters, the idea

  7. Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO{sub 2{+-}x}

    SciTech Connect (OSTI)

    Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, 64287 Darmstadt (Germany)

    2012-12-01

    We have conducted a detailed thin film growth structure of oxygen engineered monoclinic HfO{sub 2{+-}x} grown by reactive molecular beam epitaxy. The oxidation conditions induce a switching between (111) and (002) texture of hafnium oxide. The band gap of oxygen deficient hafnia decreases with increasing amount of oxygen vacancies by more than 1 eV. For high oxygen vacancy concentrations, defect bands form inside the band gap that induce optical transitions and p-type conductivity. The resistivity changes by several orders of magnitude as a function of oxidation conditions. Oxygen vacancies do not give rise to ferromagnetic behavior.

  8. Thin-film growth of the charge-density-wave oxide Rb0.30MoO3 H. S. J. van der Zant,a)

    E-Print Network [OSTI]

    Thin-film growth of the charge-density-wave oxide Rb0.30MoO3 H. S. J. van der Zant,a) O. C. Mantel 29 April 1996 We report on the thin-film fabrication of a charge-density wave CDW compound. Single-phase epitaxial films of the model CDW oxide Rb0.30MoO3 have been grown by pulsed-laser deposition. Detailed

  9. Growth of epitaxial (Sr,Ba){sub n+1}Ru{sub n}O{sub 3n+1} films

    SciTech Connect (OSTI)

    Schlom, D.G.; Knapp, S.B.; Wozniak, S. [Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering] [and others

    1997-12-01

    We have grown epitaxial (Sr,Ba) (n+1)Ru(n)O(3n+1) films, n = 1, 2, and infinity, by pulsed laser deposition (PLD) and controlled their orientation by choosing appropriate substrates. The growth conditions yielding phase pure films have been mapped out. Resistivity versus temperature measurements show that both a and c axis films of Sr2RuO4 are metallic, but not superconducting. The latter is probably due to the presence of low-level impurities that are difficult to avoid given the target preparation process involved in growing these films by PLD.

  10. ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition

    SciTech Connect (OSTI)

    Xu, W.Z.; Ye, Z.Z.; Zeng, Y.J.; Zhu, L.P.; Zhao, B.H.; Jiang, L.; Lu, J.G.; He, H.P.; Zhang, S.B. [State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2006-04-24

    We report a breakthrough in fabricating ZnO homojunction light-emitting diode by metal organic chemical vapor deposition. Using NO plasma, we are able to grow p-type ZnO thin films on n-type bulk ZnO substrates. The as-grown films on glass substrates show hole concentration of 10{sup 16}-10{sup 17} cm{sup -3} and mobility of 1-10 cm{sup 2} V{sup -1} s{sup -1}. Room-temperature photoluminescence spectra reveal nitrogen-related emissions. A typical ZnO homojunction shows rectifying behavior with a turn-on voltage of about 2.3 V. Electroluminescence at room temperature has been demonstrated with band-to-band emission at I=40 mA and defect-related emissions in the blue-yellow spectrum range.

  11. Growth of CdTe thin films on graphene by close-spaced sublimation method

    SciTech Connect (OSTI)

    Jung, Younghun; Yang, Gwangseok; Kim, Jihyun, E-mail: hyunhyun7@korea.ac.kr [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of)] [Department of Chemical and Biological Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Chun, Seungju; Kim, Donghwan [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)] [Department of Materials Science and Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

    2013-12-02

    CdTe thin films grown on bi-layer graphene were demonstrated by using the close-spaced sublimation method, where CdTe was selectively grown on the graphene. The density of the CdTe domains was increased with increasing the number of the defective sites in the graphene, which was controlled by the duration of UV exposure. The CdTe growth rate on the bi-layer graphene electrodes was 400?nm/min with a bandgap energy of 1.45–1.49?eV. Scanning electron microscopy, micro-Raman spectroscopy, micro-photoluminescence, and X-ray diffraction technique were used to confirm the high quality of the CdTe thin films grown on the graphene electrodes.

  12. Process for growing a film epitaxially upon a MGO surface and structures formed with the process

    DOE Patents [OSTI]

    McKee, Rodney Allen (Kingston, TN); Walker, Frederick Joseph (Oak Ridge, TN)

    1998-01-01

    A process and structure wherein optical quality perovskites, such as BaTiO.sub.3 or SrTiO.sub.3, are grown upon a single crystal MgO substrate involves the epitaxial build up of alternating planes of TiO.sub.2 and metal oxide wherein the first plane grown upon the MgO substrate is a plane of TiO.sub.2. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

  13. Process for growing a film epitaxially upon a MgO surface

    DOE Patents [OSTI]

    McKee, Rodney Allen (Kingston, TN); Walker, Frederick Joseph (Oak Ridge, TN)

    1997-01-01

    A process and structure wherein optical quality perovskites, such as BaTiO.sub.3 or SrTiO.sub.3, are grown upon a single crystal MgO substrate involves the epitaxial build up of alternating planes of TiO.sub.2 and metal oxide wherein the first plane grown upon the MgO substrate is a plane of TiO.sub.2. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

  14. Critical currents in vicinal YBa2Cu3O7-delta films

    E-Print Network [OSTI]

    Durrell, John H

    2004-01-01

    of these materials. For the case of YBCO the Ginzburg-Landau anisotropy param- eter, ?, is 5-7, whereas in Bi2Sr2CaCu2O8+x (BSCCO 2212) the value is? 200. This large difference has been attributed to the cuprate chains found along the b-axis between the cuprate... -oxygenated YBCO films31. III. EXPERIMENTAL TECHNIQUE Thin films of YBa2Cu3O7?? were prepared by pulsed laser deposition. The films all had thicknesses of between 100 and 200 nm and were grown on single crystal SrTiO3 substrates mis-cut by an angle, ?v , towards...

  15. Superconductivity in textured Bi clusters/Bi{sub 2}Te{sub 3} films

    SciTech Connect (OSTI)

    Le, Phuoc Huu [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30049, Taiwan (China); Faculty of Basic Sciences, Can Tho University of Medicine and Pharmacy, 179 Nguyen Van Cu Street, Can Tho (Viet Nam); Tzeng, Wen-Yen; Chen, Hsueh-Ju; Luo, Chih Wei, E-mail: cwluo@mail.nctu.edu.tw [Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan (China); Lin, Jiunn-Yuan [Institute of Physics, National Chiao Tung University, Hsinchu 300, Taiwan (China); Leu, Jihperng, E-mail: jimleu@mail.nctu.edu.tw [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30049, Taiwan (China)

    2014-09-01

    We report superconductivity at an onset critical temperature below 3.1 K in topological insulator ?200-nm-thick Bi{sub 2}Te{sub 3} thin films grown by pulsed laser deposition. Using energy-dispersive X-ray spectroscopy elemental mapping and Auger electron spectroscopy elemental depth profiling, we clearly identified bismuth (Bi) precipitation and Bi cluster signatures. Superconductivity in the Bi{sub 2}Te{sub 3} films was attributed to the proximity effect of Bi clusters precipitated on the surface of the Bi{sub 2}Te{sub 3} films.

  16. Atomic layer deposition of superparamagnetic and ferrimagnetic magnetite thin films

    SciTech Connect (OSTI)

    Zhang, Yijun; Liu, Ming E-mail: wren@mail.xjtu.edu.cn Ren, Wei E-mail: wren@mail.xjtu.edu.cn; Zhang, Yuepeng; Chen, Xing; Ye, Zuo-Guang E-mail: wren@mail.xjtu.edu.cn

    2015-05-07

    One of the key challenges in realizing superparamagnetism in magnetic thin films lies in finding a low-energy growth way to create sufficiently small grains and magnetic domains which allow the magnetization to randomly and rapidly reverse. In this work, well-defined superparamagnetic and ferrimagnetic Fe{sub 3}O{sub 4} thin films are successfully prepared using atomic layer deposition technique by finely controlling the growth condition and post-annealing process. As-grown Fe{sub 3}O{sub 4} thin films exhibit a conformal surface and poly-crystalline nature with an average grain size of 7?nm, resulting in a superparamagnetic behavior with a blocking temperature of 210?K. After post-annealing in H{sub 2}/Ar at 400?°C, the as-grown ??Fe{sub 2}O{sub 3} sample is reduced to Fe{sub 3}O{sub 4} phase, exhibiting a ferrimagnetic ordering and distinct magnetic shape anisotropy. Atomic layer deposition of magnetite thin films with well-controlled morphology and magnetic properties provides great opportunities for integrating with other order parameters to realize magnetic nano-devices with potential applications in spintronics, electronics, and bio-applications.

  17. Atomic moments in Mn2CoAl thin films analyzed by X-ray magnetic circular dichroism

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jamer, M. E.; Assaf, B. A.; Sterbinsky, G. E.; Arena, D. A.; Heiman, D.

    2014-12-05

    Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. Results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value.

  18. Atomic moments in Mn2CoAl thin films analyzed by X-ray magnetic circular dichroism

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jamer, M. [Northwestern Univ., Evanston, IL (United States). Dept. of Physics; Sterbinsky, G. [Brookhaven National Laboratory (BNL), Upton, NY (United States). Photon Sciences Directorate; Assaf, B. [Northwestern Univ., Evanston, IL (United States). Dept. of Physics; Arena, D. [Brookhaven National Laboratory (BNL), Upton, NY (United States). Photon Sciences Directorate; Heiman, D. [Northwestern Univ., Evanston, IL (United States). Dept. of Physics

    2014-12-07

    Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. The results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value. (auth)

  19. Magnetic anisotropy of permalloy films grown on an Mo,,001... stepped surface

    E-Print Network [OSTI]

    Huang, Jung-Chun

    , low coercivity, and small magnetic anisotropy.1 Py based multilayers2,3 and spin-valve4,5 struc- tures was below 5 10 9 torr. One-side polished Al2O3 1-102 sub- strates were outgassed at 1000 °C for 1 h prior

  20. Structural characterization of nanometer Sic films grown on Si J. P. Li and A. J. Steckl

    E-Print Network [OSTI]

    Cincinnati, University of

    by rapid thermal chemical vapor deposition carbonization with high propane flow rates at IlOO- 1300 "C. X of Cincinnati by the rapid thermal chemical vapor deposi- tion (RTCVD) technique. Detailed information here were formed at `atmospheric pressure by a two-step process: in situ cleaning followed

  1. Molecular-Beam Epitaxially Grown MgB2 Thin Films and Superconducting Tunnel Junctions

    E-Print Network [OSTI]

    Laloe, Jean-Baptiste

    Since the discovery of its superconducting properties in 2001, magnesium diboride has generated terrific scientific and engineering research interest around the world. With a 𝑇

  2. Continuous spin reorientation transition in epitaxially grown antiferromagnetic NiO thin films

    E-Print Network [OSTI]

    Li, J.

    2011-01-01

    along certain crystal axis [e.g. , NiO(100)]. Thusthe r 2 p S z 2, NiO ( dMgO ) / S NiO should be an approximation in the small limit.

  3. Ferroelectric PLZT thick films grown by poly(1-vinylpyrrolidone-co-vinyl

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverse (Journal Article) | SciTechSubmitted MoreTrafficFerrin Moore, Senior

  4. Self-doping effects in epitaxially grown graphene

    E-Print Network [OSTI]

    Siegel, David A.

    2009-01-01

    The electronic properties of graphene, Rev. Mod. Phys. (inE?ects in Epitaxially-Grown Graphene D.A. Siegel, 1, 2 S.Y.2009) Abstract Self-doping in graphene has been studied by

  5. Modified Magnetic Ground State in Nimn (2) O (4) Thin Films

    SciTech Connect (OSTI)

    Nelson-Cheeseman, B.B.; Chopdekar, R.V.; Iwata, J.M.; Toney, M.F.; Arenholz, E.; Suzuki, Y.; /SLAC

    2012-08-23

    The authors demonstrate the stabilization of a magnetic ground state in epitaxial NiMn{sub 2}O{sub 4} (NMO) thin films not observed in their bulk counterpart. Bulk NMO exhibits a magnetic transition from a paramagnetic phase to a collinear ferrimagnetic moment configuration below 110 K and to a canted moment configuration below 70 K. By contrast, as-grown NMO films exhibit a single magnetic transition at 60 K and annealed films exhibit the magnetic behavior found in bulk. Cation inversion and epitaxial strain are ruled out as possible causes for the new magnetic ground state in the as-grown films. However, a decrease in the octahedral Mn{sup 4+}:Mn{sup 3+} concentration is observed and likely disrupts the double exchange that produces the magnetic state at intermediate temperatures. X-ray magnetic circular dichroism and bulk magnetometry indicate a canted ferrimagnetic state in all samples at low T. Together these results suggest that the collinear ferrimagnetic state observed in bulk NMO at intermediate temperatures is suppressed in the as grown NMO thin films due to a decrease in octahedral Mn{sup 4+}, while the canted moment ferrimagnetic ordering is preserved below 60 K.

  6. Modified magnetic ground state in NiMn2O4 thin films

    SciTech Connect (OSTI)

    Nelson-Cheeseman, B. B.; Chopdekar, R. V.; Toney, M. F.; Arenholz, E.; Suzuki, Y.; Iwata, J.M.

    2010-08-03

    We demonstrate the stabilization of a magnetic ground state in epitaxial NiMn2O4 (NMO) thin films not observed in their bulk counterpart. Bulk NMO exhibits a magnetic transition from a paramagnetic phase to a collinear ferrimagnetic moment configuration below 110 K and to a canted moment configuration below 70 K. By contrast, as-grown NMO films exhibit a single magnetic transition at 60 K and annealed films exhibit the magnetic behavior found in bulk. Cation inversion and epitaxial strain are ruled out as possible causes for the new magnetic ground state in the as-grown films. However, a decrease in the octahedral Mn{sup 4+}:Mn{sup 3+} concentration is observed and likely disrupts the double exchange that produces the magnetic state at intermediate temperatures. X-ray magnetic circular dichroism and bulk magnetometry indicate a canted ferrimagnetic state in all samples at low temperature. Together these results suggest that the collinear ferrimagnetic state observed in bulk NMO at intermediate temperatures is suppressed in the as grown NMO thin films due to a decrease in octahedral Mn{sup 4+} while the canted moment ferrimagnetic ordering is preserved below 60 K.

  7. Characterization of Thin Films by XAFS: Application to Spintronics Materials

    SciTech Connect (OSTI)

    Heald, Steve M.; Kaspar, Tiffany C.; Droubay, Timothy C.; Chambers, Scott A.

    2009-10-25

    X-ray absorption fine structure (XAFS) has proven very valuable in characterizing thin films. This is illustrated with some examples from the area of diluted magnetic semiconductor (DMS) materials for spintronics applications. A promising route to DMS materials is doping of oxides such as TiO2 and ZnO with magnetic atoms such as Co. These can be grown as epitaxial thin films on various substrates. XAFS is especially valuable for characterizing the dopant atoms. The near edge region is sensitive to the symmetry of the bonding and valence of the dopants, and the extended XAFS can determine the details of the lattice site. XAFS is also valuable for detecting metallic nanoparticles. These can be difficult to detect by other methods, and can give a spurious magnetic signal. The power of XAFS is illustrated by examples from studies on Co doped ZnO films.

  8. Graphene layer growth on silicon substrates with nickel film by pulse arc plasma deposition

    SciTech Connect (OSTI)

    Fujita, K.; Banno, K.; Aryal, H. R.; Egawa, T.

    2012-10-15

    Carbon layer has been grown on a Ni/SiO{sub 2}/Si(111) substrate under high vacuum pressure by pulse arc plasma deposition. From the results of Raman spectroscopy for the sample, it is found that graphene was formed by ex-situ annealing of sample grown at room temperature. Furthermore, for the sample grown at high temperature, graphene formation was shown and optimum temperature was around 1000 Degree-Sign C. Transmission electron microscopy observation of the sample suggests that the graphene was grown from step site caused by grain of Ni film. The results show that the pulse arc plasma technique has the possibility for acquiring homogenous graphene layer with controlled layer thickness.

  9. Electric field-induced magnetic switching in Mn:ZnO film

    SciTech Connect (OSTI)

    Ren, S. X.; Sun, G. W.; Zhao, J.; Dong, J. Y.; Zhao, X.; Chen, W.; Wei, Y.; Ma, Z. C.

    2014-06-09

    A large magnetic modulation, accompanied by stable bipolar resistive switching (RS) behavior, was observed in a Mn:ZnO film by applying a reversible electric field. A significant enhancement of the ferromagnetism of the film, to about five times larger than that in the initial (as-grown) state (IS), was obtained by switching the film into the low resistance state. X-ray photoelectron spectroscopy demonstrated the existence of abundant oxygen vacancies in the IS of the film. We suggest that this electric field-induced magnetic switching effect originates with the migration and redistribution of oxygen vacancies during RS. Our work indicates that electric switching is an effective and simple method to increase the ferromagnetism of diluted magnetic oxide films. This provides a promising direction for research in spintronic devices.

  10. Polycrystalline GaAs solar cells on low-cost Silicon-Film{trademark} substrates

    SciTech Connect (OSTI)

    Mauk, M.G.; Feyock, B.W.; Hall, R.B.; Cavanaugh, K.D.; Cotter, J.E.

    1997-12-31

    The authors assess the potential of a low-cost, large-area Silicon-Film{trademark} sheet as a substrate for thin-film polycrystalline GaAs solar cells. Silicon-Film is a relatively inexpensive material on which large-grain (>2 mm) polycrystalline GaAs films can be formed. The GaAs epitaxial layers are grown by a simple close-spaced vapor transport (CSVT) technique using water vapor as a transport agent. A recrystallized Ge{sub 1{minus}x}Si{sub x} buffer layer between the GaAs epilayer and Silicon-Film substrate can facilitate growth of the GaAs. Selective epitaxy on patterned, oxide-masked substrates is effective in reducing thermal stress effects.

  11. The Department Of Film andThe Department Of Film and The UNLV Short Film ArchiveThe UNLV Short Film Archive present thepresent the

    E-Print Network [OSTI]

    Walker, Lawrence R.

    The Department Of Film andThe Department Of Film and The UNLV Short Film ArchiveThe UNLV Short Film Archive present thepresent the 4848--HOUR SHORT FILM contestHOUR SHORT FILM contest The UNLV Short Film Archive and the Department of Film. are sponsoring the Fifth Annual 48- HOUR SHORT FILM CONTEST in Las

  12. Pulsed laser deposition of epitaxial BeO thin films on sapphire and SrTiO{sub 3}

    SciTech Connect (OSTI)

    Peltier, Thomas; Takahashi, Ryota; Lippmaa, Mikk, E-mail: mlippmaa@issp.u-tokyo.ac.jp [Institute for Solid State Physics, University of Tokyo, Chiba 277-8581 (Japan)

    2014-06-09

    Epitaxial beryllia thin films were grown by pulsed laser deposition on Al{sub 2}O{sub 3}(001) and SrTiO{sub 3}(111) substrates. Nearly relaxed epitaxial films were obtained on both substrates at growth temperatures of up to about 600?°C. Crystalline films with expanded lattice parameters were obtained even at room temperature. The maximum growth temperature was limited by a loss of beryllium from the film surface. The volatility of beryllium appeared to be caused by the slow oxidation kinetics at the film surface and the re-sputtering effect of high-energy Be and BeO species in the ablation plume. Time-of-flight plume composition analysis suggested that the target surface became Be metal rich at low oxygen pressures, reducing the growth rate of beryllia films.

  13. Formation of manganese -doped atomic layer in wurtzite GaN Meng Shi, Abhijit Chinchore, Kangkang Wang, Andrada-Oana Mandru, Yinghao Liu et al.

    E-Print Network [OSTI]

    is formulated based on the experimental data, and implications for possible spintronic applications The importance of spintronics in general was emphati- cally described by Wolf et al.,1 while the possibility to fabri- cate room-temperature spintronic devices based on GaN was proposed by Dietl et al.2 The idea

  14. High linearity GaN HEMT power amplifier with pre-linearization gate diode Shouxuan Xie, Vamsi Paidi, Sten Heikman, Alessandro Chini,

    E-Print Network [OSTI]

    Long, Stephen I.

    GaN/GaN HEMT technology. In order to obtain high linearity, a pre-linearization gate diode is added. Introduction. Our previously described single-ended Class B power amplifier design using GaN HEMT technology is biased at exactly the pinch off point (Class B configuration) [1]. In order to further improve

  15. Analysis of chemically deposited CdSe and CdS thin films

    E-Print Network [OSTI]

    Osuji, R U

    2002-01-01

    We have successfully deposited quality polycrystalline thin films of CdSe and CdS on Corning 7059 glass slides by the electroless chemical bath technique at room temperature (~27 $^\\circ$C). X-ray analysis confirmed the successful deposition of CdSe and CdS thin films. Our grown CdSe film thickness ranged from 0.10 $\\mu$m. to 0.80 $\\pm$ 0.01 $\\mu$m and the CdS film thickness ranged from 0.10 $\\mu$m to 1.00 $\\pm$ 0.01 $\\mu$m. The scanning electron micrograph of the films reveals uniform film surface. The energy gaps, $E_g$ determined for our CdSe and CdS films have average values of 1.70 $\\pm$ 0.04 eV and 2.15 $\\pm$ 0.04 eV respectively. The films have high absorbance in the 0.35 $\\mu$m - 0.85 $\\mu$m range. These qualities make them suitable for use in thin film solar cell technology.

  16. Dependence of the surface topology and raman scattering spectra of Ge{sub x}Si{sub 1-x}/Si films on the composition variation over the layer thickness

    SciTech Connect (OSTI)

    Lunin, L. S.; Sysoev, I. A. [Russian Academy of Sciences, Southern Scientific Center (Russian Federation); Bavizhev, M. D.; Lapin, V. A., E-mail: viacheslavlapin@yandex.ru [North Caucasus Federal University (Russian Federation); Kuleshov, D. S.; Malyavin, F. F. [South Russian State Technical University (Russian Federation)

    2013-05-15

    The surface topology and Raman scattering spectra of Ge{sub x}Si{sub 1-x}/Si(100) films are investigated in dependence of the composition variation over the film thickness. It is shown that the character of the Ge content variation in the Ge{sub x}Si{sub 1-x} alloy at the constant cumulative Ge fraction in the film (x{sub int} = 0.5) affects the surface morphology of the grown Ge{sub x}Si{sub 1-x}/Si layer. The heterostructures were grown by molecular-beam epitaxy.

  17. Dual acceptor doping and aging effect of p-ZnO:(Na, N) nanorod thin films by spray pyrolysis

    SciTech Connect (OSTI)

    Swapna, R., E-mail: swapna.ramella@yahoo.com, E-mail: santhoshmc@nitt.edu; Amiruddin, R., E-mail: swapna.ramella@yahoo.com, E-mail: santhoshmc@nitt.edu; Santhosh Kumar, M. C., E-mail: swapna.ramella@yahoo.com, E-mail: santhoshmc@nitt.edu [Advanced Materials Laboratory, Department of Physics, National Institute of Technology, Tiruchirappalli-620 015 (India)

    2014-01-28

    An attempt has been made to realize p-type ZnO by dual acceptor doping (Na-N) into ZnO thin films. Na and N doped ZnO thin films of different concentrations (0 to 8 at.%) have been grown by spray pyrolysis at 623 K. The grown films on glass substrate have been characterized by X-ray diffraction (XRD), Hall measurement, UV-Vis spectrophotometer, Photoluminescence (PL) and Energy dispersive spectroscopy (EDS) to validate the p-type conduction. The surface morphology and roughness of the ZnO:(Na, N) films are studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively. Hall measurement shows that all the films exhibit p-type conductivity except for 0 at.% Na-N doped ZnO film. The obtained resistivity (5.60×10{sup ?2} ? cm) and hole concentration (3.15×10{sup 18} cm{sup ?3}) for the best dual acceptor doped film is 6 at.%. It has been predicted that (Na{sub Zn}?N{sub O}) acceptor complex is responsible for the p-type conduction. The p-type conductivity of the ZnO:(Na, N) films is stable even after 6 months. The crystallinity of the films has been studied by XRD. Energy dispersive spectroscopy (EDS) confirms the presence of Na and N in 6 at.% ZnO:(Na, N) film. Photoluminescence (PL) spectra of ZnO:(Na, N) films show NBE and deep level emissions in the UV and visible regions, respectively. The ZnO:(Na, N) films exhibit a high transmittance about 90% in the visible region.

  18. Thermal Conductivity Measurement of Xe-Implanted Uranium Dioxide Thick Films using Multilayer Laser Flash Analysis

    SciTech Connect (OSTI)

    Nelson, Andrew T. [Los Alamos National Laboratory

    2012-08-30

    The Fuel Cycle Research and Development program's Advanced Fuels campaign is currently pursuing use of ion beam assisted deposition to produce uranium dioxide thick films containing xenon in various morphologies. To date, this technique has provided materials of interest for validation of predictive fuel performance codes and to provide insight into the behavior of xenon and other fission gasses under extreme conditions. In addition to the structural data provided by such thick films, it may be possible to couple these materials with multilayer laser flash analysis in order to measure the impact of xenon on thermal transport in uranium dioxide. A number of substrate materials (single crystal silicon carbide, molybdenum, and quartz) containing uranium dioxide films ranging from one to eight microns in thickness were evaluated using multilayer laser flash analysis in order to provide recommendations on the most promising substrates and geometries for further investigation. In general, the uranium dioxide films grown to date using ion beam assisted deposition were all found too thin for accurate measurement. Of the substrates tested, molybdenum performed the best and looks to be the best candidate for further development. Results obtained within this study suggest that the technique does possess the necessary resolution for measurement of uranium dioxide thick films, provided the films are grown in excess of fifty microns. This requirement is congruent with the material needs when viewed from a fundamental standpoint, as this length scale of material is required to adequately sample grain boundaries and possible second phases present in ceramic nuclear fuel.

  19. Amorphous diamond films

    DOE Patents [OSTI]

    Falabella, Steven (Livermore, CA)

    1998-01-01

    Amorphous diamond films having a significant reduction in intrinsic stress are prepared by biasing a substrate to be coated and depositing carbon ions thereon under controlled temperature conditions.

  20. Chloroform cometabolism by butane-grown CF8, Pseudomonas butanovora, and Mycobacterium vaccae JOB5 and methane-grown Methylosinus trichosporium

    E-Print Network [OSTI]

    Semprini, Lewis

    Chloroform cometabolism by butane-grown CF8, Pseudomonas butanovora, and Mycobacterium vaccae JOB5 AND ENVIRONMENTAL MICROBIOLOGY 63 (9): 3607-3613 SEP 1997 Abstract: Chloroform (CF) degradation by a butane-grown enrichment culture, CF8, was compared to that by butane-grown Pseudomonas butanovora and Mycobacterium vaccae

  1. Investigation of deep level defects in CdTe thin films

    SciTech Connect (OSTI)

    Shankar, H.; Castaldini, A.; Dauksta, E.; Medvid, A.; Cavallini, A.

    2014-02-21

    In the past few years, a large body of work has been dedicated to CdTe thin film semiconductors, as the electronic and optical properties of CdTe nanostructures make them desirable for photovoltaic applications. The performance of semiconductor devices is greatly influenced by the deep levels. Knowledge of parameters of deep levels present in as-grown materials and the identification of their origin is the key factor in the development of photovoltaic device performance. Photo Induced Current Transient Spectroscopy technique (PICTS) has proven to be a very powerful method for the study of deep levels enabling us to identify the type of traps, their activation energy and apparent capture cross section. In the present work, we report the effect of growth parameters and LASER irradiation intensity on the photo-electric and transport properties of CdTe thin films prepared by Close-Space Sublimation method using SiC electrical heating element. CdTe thin films were grown at three different source temperatures (630, 650 and 700 °C). The grown films were irradiated with Nd:YAG LASER and characterized by Photo-Induced Current Transient Spectroscopy, Photocurrent measurementand Current Voltage measurements. The defect levels are found to be significantly influenced by the growth temperature.

  2. Non-vacuum growth of graphene films using solid carbon source

    SciTech Connect (OSTI)

    Nguyen, Ba-Son; Lin, Jen-Fin E-mail: dcperng@ee.ncku.edu.tw

    2015-06-01

    This study demonstrates that air annealing can grow high-quality graphene films on the surface of polycrystalline nickel film with the help of an effective SiO{sub 2} capping layer. The number of graphene layers can be modulated by the amount of carbon embedded in the Ni film before annealing. Raman analysis results, transmission electron microscopy images, and electron diffraction patterns of the samples confirm that graphene films can be grown in air with an oxygen blocking layer and a 10?°C/s cooling rate in an open-vented rapid thermal annealing chamber or an open tube furnace. The high-quality low-defect air-annealing grown graphene is comparable to commercially available graphene grown via chemical vapor deposition. The proposed graphene growth using air annealing technique is simple and low-cost, making it highly attractive for mass production. It is transfer-free to a silicon substrate and can speed up graphene development, opening up new applications.

  3. Adsorption of iso-/n-butane on an Anatase Thin Film: A Molecular Beam Scattering and TDS Study

    SciTech Connect (OSTI)

    Goering, J.; Kadossov, E.; Burghaus, Uwe; Yu, Zhongqing; Thevuthasan, Suntharampillai; Saraf, Laxmikant V.

    2007-07-01

    Binding energies and adsorption probabilities have been determined for n/iso-butane adsorption on an anatase thin film grown on SrTiO3(001) by means of thermal desorption spectroscopy (TDS) and molecular beam scattering. The sample has been characterized by x-ray diffraction (XRD) and Auger electrons spectroscopy (AES).

  4. TOWARDS CIGS SOLAR CELLS WITH REDUCED FILM THICKNESS: A STUDY OF OPTICAL PROPERTIES AND OF PHOTONIC STRUCTURES FOR LIGHT TRAPPING

    E-Print Network [OSTI]

    TOWARDS CIGS SOLAR CELLS WITH REDUCED FILM THICKNESS: A STUDY OF OPTICAL PROPERTIES AND OF PHOTONIC ABSTRACT: In view of large-scale exploitation of CuIn1-xGaxSe2 (CIGS) solar cells for photovoltaic energy. In this work we perform a full study of optical properties of CIGS solar cells grown by a hybrid sputtering

  5. Fabrication and Characterization of Nano-Sized Magnetic Structures and Their Flux-Pinning Effects on Superconducting Thin Films 

    E-Print Network [OSTI]

    Lee, Han Gil

    2011-02-22

    . . ............................................................................................. 29 22 Cobalt was grown not only on the Au film cathode, but also on the contact pads for this sample.. ........................................................ 31 23 A photo mask (1 cm by 1cm... for electron beam lithography of the cathode, cohesion frames, and electrical lead to the cathode. ................................................. 34 25 The pattern for electron beam lithography for the superconducting...

  6. Optical properties of polycrystalline diamond films in the far-infrared A. J. Gatesman, R. H. Giles, J. Waldman

    E-Print Network [OSTI]

    Massachusetts at Lowell, University of

    spurred interest in the growth and production of high quality diamond films for a variety of electrical and optical applications. Potential uses for vapor grown diamond include optical coatings and windows, heatTorr Deposition Pressure 50 Torr Substrate Temperature 875 - 950 C Hydrogen Flow 250 - 500 sccm Methane Flow 2 - 5

  7. Vehicle Technologies Office Merit Review 2015: Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction Drives

    Broader source: Energy.gov [DOE]

    Presentation given by APEI Inc. at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about advanced low-cost SiC and GaN wide...

  8. Vehicle Technologies Office Merit Review 2014: Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction Drives

    Broader source: Energy.gov [DOE]

    Presentation given by APEI Inc. at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about Advanced low-cost SIC and GaN wide...

  9. Novel ethylenediamine-gallium phosphate containing 6-fold coordinated gallium atoms with unusual four equatorial Ga–N bonds

    SciTech Connect (OSTI)

    Torre-Fernández, Laura [Departamentos de Química Física y Analítica y Química Orgánica e Inorgánica, Universidad de Oviedo-CINN, 33006 Oviedo (Spain); Espina, Aránzazu; Khainakov, Sergei A.; Amghouz, Zakariae [Servicios Científico Técnicos, Universidad de Oviedo, 33006 Oviedo (Spain); García, José R. [Departamentos de Química Física y Analítica y Química Orgánica e Inorgánica, Universidad de Oviedo-CINN, 33006 Oviedo (Spain); García-Granda, Santiago, E-mail: sgg@uniovi.es [Departamentos de Química Física y Analítica y Química Orgánica e Inorgánica, Universidad de Oviedo-CINN, 33006 Oviedo (Spain)

    2014-07-01

    A novel ethylenediamine-gallium phosphate, formulated as Ga(H{sub 2}NCH{sub 2}CH{sub 2}NH{sub 2}){sub 2}PO{sub 4}·2H{sub 2}O, was synthesized under hydrothermal conditions. The crystal structure, including hydrogen positions, was determined using single-crystal X-ray diffraction data (monoclinic, a=9.4886(3) Å, b=6.0374(2) Å, c=10.2874(3) Å, and ?=104.226(3)°, space group Pc) and the bulk was characterized by chemical (Ga–P–C–H–N) and thermal analysis (TG–MS and DSC), including activation energy data of its thermo-oxidative degradation, powder X-ray diffraction (PXRD), solid-state nuclear magnetic resonance (SS-NMR) measurements, and transmission electron microscopy (TEM, SAED/NBD, and STEM BF-EDX). The crystal structure is built up of infinite zig-zag chains running along the c-axis, formed by vertex-shared (PO{sub 4}) and (GaO{sub 2}N{sub 4}) polyhedra. The new compound is characterized by unusual four equatorial Ga–N bonds coming from two nonequivalent ethylenediamine molecules and exhibits strong blue emission at 430 nm (?{sub ex}=350 nm) in the solid state at room temperature. - Graphical abstract: Single crystals of a new ethylenediamine-gallium phosphate, Ga(H{sub 2}NCH{sub 2}CH{sub 2}NH{sub 2}){sub 2}PO{sub 4}·2H{sub 2}O, were obtained and the structural features presented. This structure is one of the scarce examples of GaPO with Ga–N bonds reported. - Highlights: • A novel ethylenediamine-gallium phosphate was hydrothermally synthesized. • The new compound is characterized by unusual four equatorial Ga–N bonds. • Void-volume analysis shows cages and channels with sizes ideally suited to accommodate small molecules. • The new compound exhibits strong blue emission.

  10. Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III–V photovoltaics

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ritenour, Andrew J.; Boucher, Jason W.; DeLancey, Robert; Greenaway, Ann L.; Aloni, Shaul; Boettcher, Shannon W.

    2014-09-01

    We report the use of a simple close-spaced vapor transport technique for the growth of high-quality epitaxial GaAs films using potentially inexpensive GaAs powders as precursors. The free carrier type and density (1016 to 1019 cm–3) of the films were adjusted by addition of Te or Zn powder to the GaAs source powder. We show using photoelectrochemical and electron beam-induced current analyses that the minority carrier diffusion lengths of the n- and p-GaAs films reached ~3 ?m and ~8 ?m, respectively. Hall mobilities approach those achieved for GaAs grown by metal–organic chemical vapor deposition, 1000–4200 cm2 V–1 s–1 for n-GaAsmore »and 50–240 cm V–1 s–1 for p-GaAs depending on doping level. We conclude that the electronic quality of GaAs grown by close-spaced vapor transport is similar to that of GaAs made using conventional techniques and is thus sufficient for high-performance photovoltaic applications.« less

  11. Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III–V photovoltaics

    SciTech Connect (OSTI)

    Ritenour, Andrew J.; Boucher, Jason W.; DeLancey, Robert; Greenaway, Ann L.; Aloni, Shaul; Boettcher, Shannon W.

    2014-09-01

    We report the use of a simple close-spaced vapor transport technique for the growth of high-quality epitaxial GaAs films using potentially inexpensive GaAs powders as precursors. The free carrier type and density (1016 to 1019 cm–3) of the films were adjusted by addition of Te or Zn powder to the GaAs source powder. We show using photoelectrochemical and electron beam-induced current analyses that the minority carrier diffusion lengths of the n- and p-GaAs films reached ~3 ?m and ~8 ?m, respectively. Hall mobilities approach those achieved for GaAs grown by metal–organic chemical vapor deposition, 1000–4200 cm2 V–1 s–1 for n-GaAs and 50–240 cm V–1 s–1 for p-GaAs depending on doping level. We conclude that the electronic quality of GaAs grown by close-spaced vapor transport is similar to that of GaAs made using conventional techniques and is thus sufficient for high-performance photovoltaic applications.

  12. spe438-20 page 1 Garrison, N.J., Busby, C.J., Gans, P.B., Putirka, K., and Wagner, D.L., 2008, A mantle plume beneath California? The mid-Miocene Lovejoy flood basalt, northern

    E-Print Network [OSTI]

    Busby, Cathy

    spe438-20 page 1 1 Garrison, N.J., Busby, C.J., Gans, P.B., Putirka, K., and Wagner, D.L., 2008-Miocene Lovejoy flood basalt, northern California Noah J. Garrison Cathy J. Busby Phillip B. Gans Department basalt. #12;2 Garrison et al. spe438-20 page 2 INTRODUCTION Mid-Miocene volcanism in the northern Sierra

  13. The Effect of Roll Waves on the Hydrodynamics of Falling Films Observed in Vertical Column Absorbers

    SciTech Connect (OSTI)

    Miller, W.A.

    2001-06-28

    A thin falling film is well suited to simultaneous heat and mass transfer because of the small thermal resistance through the film and because of the large contact surface achievable at low flow rates. The film enters as a smooth laminar flow and quickly transitions into small-amplitude wavy flow. The waves grown in length and amplitude and are identified as roll waves. This flow regime is termed wavy-laminar flow, and modern heat and mass transfer equipment operate in this complicated transition regime. Research published in open literature has shown the mass flow rate in the rollwaves to be about 10 to 20 times greater than that in the laminar substrate. As the film fully develops, the waves grow in mass and the film substrate thins because fluid is swept from the substrate by the secondary flows of the roll wave. Many studies have been conducted to measure and correlate the film thickness of wavy-laminar flows. Literature data show that Nusselt's theory for smooth laminar flow can over predict the film thickness by as much as 20% for certain wavy-laminar flow conditions. The hydrodynamics of falling films were therefore studied to measure the film thickness of a free-surface falling film and to better understand the parameters that affect the variations of the film thickness. A flow loop was set up for measuring the thickness, wave amplitude,and frequency of a film during hydrodynamic flow. Decreasing the pipe diameter caused the amplitude of the wavy flow to diminish. Measurements monitored from stations along the falling film showed a thinning of film thickness. Fully developed flow required large starting lengths of about 0.5 m. The film thickness increases as the Reynolds number (Re) increases. Increasing the Kapitza number (Ka) causes a decrease in the film thickness. Regression analysis showed that the Re and Ka numbers described the data trends in wavy-laminar flow. Rather than correlating the Re number in discrete ranges of the Ka number as earlier researchers have done, this research made the Ka number an independent regression variable along with the Re number. The correlation explains 96% of the total variation in the data and predicts the experimental data within an absolute average deviation of {+-} 4.0%. The correlation supports the calculation of a fully developed film thickness for wavy-laminar falling films.

  14. Film Society - 7 

    E-Print Network [OSTI]

    Mark Beal

    2011-08-17

    A pulsed beam time-of-flight system was used in Order to measure the stopping power of carbon ions in a thin carbon film relative to energy.loss measurements of He ions in the same carbon film. Previous measurements of He stopping powers in C...

  15. Thick film hydrogen sensor

    DOE Patents [OSTI]

    Hoffheins, B.S.; Lauf, R.J.

    1995-09-19

    A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors. 8 figs.

  16. Thick film hydrogen sensor

    DOE Patents [OSTI]

    Hoffheins, Barbara S. (Knoxville, TN); Lauf, Robert J. (Oak Ridge, TN)

    1995-01-01

    A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

  17. Stabilized chromium oxide film

    DOE Patents [OSTI]

    Garwin, Edward L. (Los Altos, CA); Nyaiesh, Ali R. (Palo Alto, CA)

    1988-01-01

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  18. Stabilized chromium oxide film

    DOE Patents [OSTI]

    Nyaiesh, A.R.; Garwin, E.L.

    1986-08-04

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150A are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  19. AN IMPROVED METHOD FOR TRANSFERRING GRAPHENE GROWN BY CHEMICAL VAPOR

    E-Print Network [OSTI]

    AN IMPROVED METHOD FOR TRANSFERRING GRAPHENE GROWN BY CHEMICAL VAPOR DEPOSITION YUJIE REN Key Laboratory of Semiconductor Materials and Applications Xiamen University, Xiamen 361005, P. R In this paper, we report an improved transfer of graphene by directly picking up the graphene with target

  20. Atomic moments in Mn2CoAl thin films analyzed by X-ray magnetic circular dichroism

    SciTech Connect (OSTI)

    Jamer, M. E.; Assaf, B. A.; Sterbinsky, G. E.; Arena, D. A.; Heiman, D.

    2014-12-05

    Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. Results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value.

  1. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

    SciTech Connect (OSTI)

    Young, Erin C.; Wu Feng; Haeger, Daniel A.; Nakamura, Shuji; Denbaars, Steven P.; Cohen, Daniel A.; Speck, James S.; Romanov, Alexey E.

    2012-10-01

    In this Letter, we report on the growth and properties of relaxed, compositionally graded Al{sub x}Ga{sub 1-x}N buffer layers on freestanding semipolar (2021) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10{sup 6}/cm{sup 2} as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

  2. In-situ surface composition measurements of CuGaSe{sub 2} thin films

    SciTech Connect (OSTI)

    Fons, P.; Yamada, A.; Niki, S.; Oyanagi, H.

    1998-12-31

    Two CuGaSe{sub 2} films were grown by molecular beam epitaxy onto GaAs (001) substrates with varying Cu/Ga flux ratios under Se overpressure conditions. Growth was interrupted at predetermined times and the surface composition was measured using Auger electron spectroscopy after which growth was continued. After growth, the film composition was analyzed using voltage dependent electron microprobe spectroscopy. Film structure and morphology were also analyzed using x-ray diffraction and atomic force microscopy. The film with a Cu/Ga ratio larger than unity showed evidence of surface segregation of a second Cu-rich phase with a Cu/Se composition ratio slightly greater than unity. A second CuGaSe{sub 2} film with a Cu/Ga ratio of less than unity showed no change in surface composition with time and was also consistent with bulk composition measurements. Diffraction measurements indicated a high concentration of twins as well as the presence of domains with mixed c and a axes in the Ga-rich film. The Cu-rich films by contrast were single domain and had a narrower mosaics. High sensitivity scans along the [001] reciprocal axis did not exhibit any new peaks not attributable to either the substrate or the CuGaSe{sub 2} thin film.

  3. Characteristics of conductive SrRuO{sub 3} thin films with different microstructures

    SciTech Connect (OSTI)

    Jia, Q.X.; Chu, F.; Adams, C.D.; Wu, X.D.; Hawley, M.; Cho, J.H.; Findikoglu, A.T.; Foltyn, S.R.; Smith, J.L.; Mitchell, T.E.

    1996-09-01

    Conductive SrRuO{sub 3} thin films were epitaxially grown on (100) LaAlO{sub 3} substrates by pulsed laser deposition over a temperature range from 650{degree}C to 825{degree}C. Well-textured films exhibiting a strong orientation relationship to the underlying substrate could be obtained at a deposition temperature as low as 450{degree}C. The degree of crystallinity of the films improved with increasing deposition temperature as confirmed by x-ray diffraction, transmission electron microscopy, and scanning tunneling microscopy. Scanning electron microscopy revealed no particulates on the film surface. The resistivity of the SrRuO{sub 3} thin films was found to be a strong function of the crystallinity of the film and hence the substrate temperature during film deposition. A residual resistivity ratio (RRR={rho}{sub 300K}/{rho}{sub 4.2K}) of more than 8 was obtained for the SrRuO{sub 3} thin films deposited under optimized processing conditions. {copyright} {ital 1996 Materials Research Society.}

  4. Superconducting thin films of (100) and (111) oriented indium doped topological crystalline insulator SnTe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Si, W.; Zhang, C.; Wu, L.; Ozaki, T.; Gu, G.; Li, Q.

    2015-09-01

    Recent discovery of the topological crystalline insulator SnTe has triggered a search for topological superconductors, which have potential application to topological quantum computing. The present work reports on the superconducting properties of indium doped SnTe thin films. The (100) and (111) oriented thin films were epitaxially grown by pulsed-laser deposition on (100) and (111) BaF2 crystalline substrates respectively. The onset superconducting transition temperatures are about 3.8 K for (100) and 3.6 K for (111) orientations, slightly lower than that of the bulk. Magneto-resistive measurements indicate that these thin films may have upper critical fields higher than that of the bulk.more »With large surface-to-bulk ratio, superconducting indium doped SnTe thin films provide a rich platform for the study of topological superconductivity and potential device applications based on topological superconductors.« less

  5. Low-temperature electrical transport in B-doped ultrananocrystalline diamond film

    SciTech Connect (OSTI)

    Li, Lin; Zhao, Jing; Hu, Zhaosheng; Quan, Baogang; Li, Junjie Gu, Changzhi

    2014-05-05

    B-doped ultrananocrystalline diamond (UNCD) films are grown using hot-filament chemical vapor deposition method, and their electrical transport properties varying with temperature are investigated. When the B-doped concentration of UNCD film is low, a step-like increase feature of the resistance is observed with decreasing temperature, reflecting at least three temperature-modified electronic state densities at the Fermi level according to three-dimensional Mott's variable range hopping transport mechanism, which is very different from that of reported B-doped nanodiamond. With increasing B-doped concentration, a superconductive transformation occurs in the UNCD film and the highest transformation temperature of 5.3?K is observed, which is higher than that reported for superconducting nanodiamond films. In addition, the superconducting coherence length is about 0.63?nm, which breaks a reported theoretical and experimental prediction about ultra-nanoscale diamond's superconductivity.

  6. Oriented growth of pentacene films on vacuum-deposited polytetrafluoroethylene layers aligned by rubbing technique

    E-Print Network [OSTI]

    M. Prelipceanu; O. S. Prelipceanu; O. G. Tudose; K. Grytsenko; S. Schrader

    2007-04-04

    We investigated structure and morphology of PTFE layers deposited by vacuum process in dependence on deposition parameters: deposition rate, deposition temperature, electron activation energy and activation current. Pentacene (PnC) layers deposited on top of those PTFE films are used as a tool to demonstrate the orienting ability of the PTFE layers. The molecular structure of the PTFE films was investigated by use of infrared spectroscopy. By means of ellipsometry, values of refractive index between 1.33 and 1.36 have been obtained for PTFE films in dependence on deposition conditions. Using the cold friction technique orienting PTFE layers with unidirectional grooves are obtained. On top of these PTFE films oriented PnC layers were grown. The obtained order depends both on the PTFE layer thickness and on PnC growth temperature.

  7. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Yuankun; Mendelsberg, Rueben J.; Zhu, Jiaqi; Han, Jiecai; Anders, André

    2012-11-26

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). In this study, it is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 x 10-5 ?cm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80% from 500-1250 nmmore »(including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.« less

  8. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    SciTech Connect (OSTI)

    Zhu, Yuankun; Mendelsberg, Rueben J.; Zhu, Jiaqi; Han, Jiecai; Anders, André

    2012-11-26

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). In this study, it is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 x 10-5 ?cm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80% from 500-1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.

  9. Effects of catalyst film thickness on plasma-enhanced carbon nanotube growth

    SciTech Connect (OSTI)

    Hofmann, S.; Cantoro, M.; Kleinsorge, B.; Casiraghi, C.; Parvez, A.; Robertson, J.; Ducati, C.

    2005-08-01

    A systematic study is presented of the influence of catalyst film thickness on carbon nanostructures grown by plasma-enhanced chemical-vapor deposition from acetylene and ammonia mixtures. We show that reducing the Fe/Co catalyst film thickness below 3 nm causes a transition from larger diameter (>40 nm), bamboolike carbon nanofibers to small diameter ({approx}5 nm) multiwalled nanotubes with two to five walls. This is accompanied by a more than 50 times faster growth rate and a faster catalyst poisoning. Thin Ni catalyst films only trigger such a growth transition when pretreated with an ammonia plasma. We observe a limited correlation between this growth transition and the coarsening of the catalyst film before deposition. For a growth temperature of {<=}550 deg. C, all catalysts showed mainly a tip growth regime and a similar activity on untreated silicon, oxidized silicon, and silicon nitride support.

  10. Sharp semiconductor-to-metal transition of VO{sub 2} thin films on glass substrates

    SciTech Connect (OSTI)

    Jian, Jie; Chen, Aiping [Department of Electrical and Computer Engineering, Texas A and M University, College Station, Texas 77843-3128 (United States); Zhang, Wenrui [Material Science and Engineering Program, Texas A and M University, College Station, Texas 77843-3128 (United States); Wang, Haiyan, E-mail: wangh@ece.tamu.edu [Department of Electrical and Computer Engineering, Texas A and M University, College Station, Texas 77843-3128 (United States); Material Science and Engineering Program, Texas A and M University, College Station, Texas 77843-3128 (United States)

    2013-12-28

    Outstanding phase transition properties of vanadium dioxide (VO{sub 2}) thin films on amorphous glass were achieved and compared with the ones grown on c-cut sapphire and Si (111) substrates, all by pulsed laser deposition. The films on glass substrate exhibit a sharp semiconductor-to-metal transition (?4.3?°C) at a near bulk transition temperature of ?68.4?°C with an electrical resistance change as high as 3.2?×?10{sup 3} times. The excellent phase transition properties of the films on glass substrate are correlated with the large grain size and low defects density achieved. The phase transition properties of VO{sub 2} films on c-cut sapphire and Si (111) substrates were found to be limited by the high defect density.

  11. Transparent and conductive indium doped cadmium oxide thin films prepared by pulsed filtered cathodic arc deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Yuankun [Harbin Institute of Technology (China). Center for Composite Materials and Structures; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Plasma Applications Group; Mendelsberg, Rueben J. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Plasma Applications Group and Molecular Foundry; Zhu, Jiaqi [Harbin Institute of Technology (China). Center for Composite Materials and Structures; Han, Jiecai [Harbin Institute of Technology (China). Center for Composite Materials and Structures; Anders, Andre [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Plasma Applications Group

    2013-01-01

    Indium doped cadmium oxide (CdO:In) films with different In concentrations were prepared on low-cost glass substrates by pulsed filtered cathodic arc deposition (PFCAD). It is shown that polycrystalline CdO:In films with smooth surface and dense structure are obtained. In-doping introduces extra electrons leading to remarkable improvements of electron mobility and conductivity, as well as improvement in the optical transmittance due to the Burstein Moss effect. CdO:In films on glass substrates with thickness near 230 nm show low resistivity of 7.23 10-5 cm, high electron mobility of 142 cm2/Vs, and mean transmittance over 80percent from 500-1250 nm (including the glass substrate). These high quality pulsed arc-grown CdO:In films are potentially suitable for high efficiency multi-junction solar cells that harvest a broad range of the solar spectrum.

  12. Healing of graphene on single crystalline Ni(111) films

    SciTech Connect (OSTI)

    Zeller, Patrick; Wintterlin, Joost; Speck, Florian; Ostler, Markus; Weinl, Michael; Schreck, Matthias; Seyller, Thomas

    2014-11-10

    The annealing of graphene layers grown on 150?nm thick single crystal Ni(111) films was investigated in situ by low energy electron microscopy and photoemission electron microscopy. After growth, by means of chemical vapor deposition of ethylene, the graphene layers consist of several domains showing different orientations with respect to the underlying Ni surface and also of small bilayer areas. It is shown that, in a controlled process, the rotated domains can be transformed into lattice-aligned graphene, and the bilayer areas can be selectively dissolved, so that exclusively the aligned monolayer graphene is obtained. The ordering mechanism involves transport of C atoms across the surface and solution in the bulk.

  13. Film Studies: Theory and Practice

    E-Print Network [OSTI]

    Little, Tony

    MLitt Film Studies: Theory and Practice School of Arts and Humanities http://stir.ac.uk/f2 #12 for . . . That's why I would have no hesitation in recommending the experience to anyone. Grahame Reid, Film and Media Development Officer, MacRobert Arts Centre, and Recent Graduate, MLitt Film Studies Is Film

  14. Single-crystalline aluminum film for ultraviolet plasmonic nanolasers

    E-Print Network [OSTI]

    Chou, Bo-Tsun; Wu, Yen-Mo; Chung, Yi-Chen; Hsueh, Wei-Jen; Lin, Shih-Wei; Lu, Tien-Chang; Lin, Tzy-Rong; Lin, Sheng-Di

    2015-01-01

    Plasmonic devices have advanced significantly in the past decade. Being one of the most intriguing devices, plamonic nanolasers plays an important role in biomedicine, chemical sensor, information technology, and optical integrated circuits. However, nanoscale plasmonic devices, particularly in ultraviolet regime, are extremely sensitive to metal and interface quality, which renders the development of ultraviolet plasmonics. Here, by addressing the material issues, we demonstrate a low threshold, high characteristic temperature metal-oxide-semiconductor ZnO nanolaser working at room temperature. The template for ZnO nanowires consists of a flat single-crystalline aluminum film grown by molecular beam epitaxy and an ultra-smooth Al2O3 spacer layer prepared by atomic layer deposition. By effectively reducing surface plasmon scattering loss and metal intrinsic absorption loss, the high-quality metal film and sharp interfaces between layers boost the device performance. Our work paves the way for future applicati...

  15. Very high residual resistivity ratios of heteroepitaxial superconducting niobium films on MgO substrates

    SciTech Connect (OSTI)

    Krishnan, Mahadevan [Alameda Applied Sciences Corporation (AASC), San Leandro, CA 94577, USA; Valderrama, E. [Alameda Applied Sciences Corporation (AASC), San Leandro, CA 94577, USA; Bures, B. [Alameda Applied Sciences Corporation (AASC), San Leandro, CA 94577, USA; Wilson-Elliott, K. [Alameda Applied Sciences Corporation (AASC), San Leandro, CA 94577, USA; Zhao, Xin [JLAB; Phillips, H. Larry [JLAB; Valente, Anne-Marie [JLAB; Spradlin, Joshua K. [JLAB; Reece, Charles E. [JLAB; Seo, Kang [Norfolk State U.

    2011-11-01

    We report residual resistivity ratio (RRR) values (up to RRR-541) measured in thin film Nb grown on MgO crystal substrates, using a vacuum arc discharge, whose 60?160 eV Nb ions drive heteroepitaxial crystal growth. The RRR depends strongly upon substrate annealing and deposition temperatures. X-ray diffraction spectra and pole figures reveal that, as the crystal structure of the Nb film becomes more ordered, RRR increases, consistent with fewer defects or impurities in the lattice and hence longer electron mean free path. A transition from Nb(110) to purely Nb(100) crystal orientation on the MgO(100) lattice occurs at higher temperature.

  16. Microwave properties of RF- sputtered ZnFe{sub 2}O{sub 4} thin films

    SciTech Connect (OSTI)

    Garg, T. Kulkarni, A. R.; Venkataramani, N.; Sahu, B. N.; Prasad, Shiva

    2014-04-24

    In this work, RF- magnetron sputtering technique has been employed to deposit nanocrystalline ZnFe{sub 2}O{sub 4} thin films at room temperature. The as grown films were ex-situ annealed in air for 2 h at temperatures from 150°C to 650°C. X-ray diffraction, vibrating sample magnetometer and ferromagnetic resonance were used to analyze the phase formation, magnetic properties and microwave properties respectively. From the hysteresis loops and ferromagnetic resonance spectra taken at room temperature, a systematic study on the effect of O{sub 2} plasma on microwave properties with respect to processing temperature has been carried out.

  17. Group I-III-VI.sub.2 semiconductor films for solar cell application

    DOE Patents [OSTI]

    Basol, Bulent M. (Redondo Beach, CA); Kapur, Vijay K. (Northridge, CA)

    1991-01-01

    This invention relates to an improved thin film solar cell with excellent electrical and mechanical integrity. The device comprises a substrate, a Group I-III-VI.sub.2 semiconductor absorber layer and a transparent window layer. The mechanical bond between the substrate and the Group I-III-VI.sub.2 semiconductor layer is enhanced by an intermediate layer between the substrate and the Group I-III-VI.sub.2 semiconductor film being grown. The intermediate layer contains tellurium or substitutes therefor, such as Se, Sn, or Pb. The intermediate layer improves the morphology and electrical characteristics of the Group I-III-VI.sub.2 semiconductor layer.

  18. Magnetic and transport properties of Mn{sub 2}CoAl oriented films

    SciTech Connect (OSTI)

    Jamer, Michelle E.; Assaf, Badih A.; Devakul, Trithep; Heiman, Don

    2013-09-30

    The structure, magnetic, and transport properties of thin films of the Heusler ferrimagnet Mn{sub 2}CoAl have been investigated for properties related to spin gapless semiconductors. Oriented films were grown by molecular beam epitaxy on GaAs substrates and the structure was found to transform from tetragonal to cubic for increasing annealing temperature. The anomalous Hall resistivity is found to be proportional to the square of the longitudinal resistivity and magnetization expected for a topological Berry curvature origin. A delicate balance of the spin-polarized carrier type when coupled with voltage gate-tuning could significantly impact advanced electronic devices.

  19. Proposed Route to Thin Film Crystal Si Using Biaxially Textured Foreign Template Layers

    SciTech Connect (OSTI)

    Teplin, C. W.; Ginley, D. S.; van Hest, M.F.A.M.; Perkins, J. D.; Young, D. L.; Stradins, P.; Wang, Q.; Al-Jassim, M.; Iwaniczko, E.; Leenheer, A.; Jones, K. M.; Branz, H. M.

    2005-11-01

    We have developed a new approach to growing photovoltaic-quality crystal silicon (c-Si) films on glass. Other approaches to film c-Si focus on increasing grain size in order to reduce the deleterious effects of grain boundaries. Instead, we have developed an approach to align the silicon grains biaxially (both in and out of plane) so that 1) grain boundaries are "low-angle" and have less effect on the electronic properties of the material and 2) subsequent epitaxial thickening is simplified. They key to our approach is the use of a foreign template layer that can be grown with biaxial texture directly on glass.

  20. Relaxation of photoinduced spins and carriers in ferromagnetic InMnSb films

    SciTech Connect (OSTI)

    Nontapot, K.; Kini, R. N.; Gifford, A.; Merritt, T. R.; Khodaparast, G. A.; Wojtowicz, T.; Liu, X.; Furdyna, J. K. [Department of Physics, Virginia Tech, Blacksburg, Virginia 24061 (United States); Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

    2007-04-02

    The authors report time resolved measurements and control of photoinduced spin and carrier relaxations in InMnSb ferromagnetic films with 2% Mn content (grown by low-temperature molecular beam epitaxy) using femtosecond laser pulses, and compare them to analogous measurements on InBeSb and InSb films. In this work, magneto-optical Kerr effect and standard pump-probe techniques provided a direct measure of the photoexcited spin and carrier lifetimes, respectively. They observe decrease in relaxations times in the high laser fluence regime and an absence of temperature dependence of the relaxation times.

  1. Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates

    SciTech Connect (OSTI)

    Gatti, R.; Boioli, F.; Montalenti, F.; Miglio, Leo [L-NESS and Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano-Bicocca, via R. Cozzi 53, I-20125 Milano (Italy); Grydlik, M.; Brehm, M.; Groiss, H.; Glaser, M.; Fromherz, T.; Schaeffler, F. [Institut fuer Halbleiter- und Festkoerperphysik, Johannes Kepler Universitaet, Altenberger Str. 69, A-4040 Linz (Austria)

    2011-03-21

    We demonstrate dislocation engineering without oxide masks. By using finite element simulations we show how nanopatterning of Si substrates with (111) trenches provides anisotropic elastic relaxation in a SiGe film, generates preferential nucleation sites for dislocation loops, and allows for dislocation trapping, leaving wide areas free of threading dislocations. These predictions are confirmed by atomic force and transmission electron microscopy performed on overcritical Si{sub 0.7}Ge{sub 0.3} films. These were grown by molecular beam epitaxy on a Si(001) substrate patterned with periodic arrays of selectively etched (111)-terminated trenches.

  2. Thin film hydrogen sensor

    DOE Patents [OSTI]

    Cheng, Y.T.; Poli, A.A.; Meltser, M.A.

    1999-03-23

    A thin film hydrogen sensor includes a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end. 5 figs.

  3. Thin film hydrogen sensor

    DOE Patents [OSTI]

    Cheng, Yang-Tse (Rochester Hills, MI); Poli, Andrea A. (Livonia, MI); Meltser, Mark Alexander (Pittsford, NY)

    1999-01-01

    A thin film hydrogen sensor, includes: a substantially flat ceramic substrate with first and second planar sides and a first substrate end opposite a second substrate end; a thin film temperature responsive resistor on the first planar side of the substrate proximate to the first substrate end; a thin film hydrogen responsive metal resistor on the first planar side of the substrate proximate to the fist substrate end and proximate to the temperature responsive resistor; and a heater on the second planar side of the substrate proximate to the first end.

  4. A water film motor

    E-Print Network [OSTI]

    R. Shirsavar; A. Amjadi; N. Hamedani Radja; M. D. Niry; M. Reza Rahimi Tabar; M. R. Ejtehadi

    2006-05-01

    We report on electrically-induced rotations in water films, which can function at many length scales. The device consists of a two-dimensional cell used for electrolysis of water films, as simple as an insulator frame with two electrodes on the sides, to which an external in-plane electric field perpendicular to the mean electrolysis current density is applied. If either the external field or the electrolysis current exceeds some threshold (while the other one is not zero), the liquid film begins to rotate.

  5. MICROSTRUCTURE STUDY ON THE La0.7Sr0.3MnO3 AND RARE-EARTH OXIDE VERTICALLY ALIGNED NANOCOMPOSITE THIN FILMS 

    E-Print Network [OSTI]

    Hazariwala, Harshad

    2011-05-05

    Two-phase (La0.7Sr0.3MnO3)0.5:(CeO2)0.5 (LSMO:CeO2) heteroepitaxial nanocomposite films were grown on SrTiO3 (STO) (001) by pulsed laser deposition. XRD and TEM results show that LSMO:CeO2 films epitaxially grow on STO as self-assembled vertically...

  6. Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

    SciTech Connect (OSTI)

    Hosalli, A. M.; Van Den Broeck, D. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)

    2013-12-02

    We demonstrate a metalorganic chemical vapor deposition growth approach for inverting N-polar to Ga-polar GaN by using a thin inversion layer grown with high Mg flux. The introduction of this inversion layer allowed us to grow p-GaN films on N-polar GaN thin film. We have studied the dependence of hole concentration, surface morphology, and degree of polarity inversion for the inverted Ga-polar surface on the thickness of the inversion layer. We then use this approach to grow a light emitting diode structure which has the MQW active region grown on the advantageous N-polar surface and the p-layer grown on the inverted Ga-polar surface.

  7. Resistive switching characteristics of polycrystalline SrTiO{sub 3} films

    SciTech Connect (OSTI)

    Jong Choi, Hyung; Won Park, Suk; Deok Han, Gwon; Hyung Shim, Joon; Na, Junhong; Kim, Gyu-Tae

    2014-06-16

    Strontium titanate (STO) thin films 90?nm in thickness were grown on a Pt substrate through atomic layer deposition (ALD). The as-deposited ALD STO grown with an ALD cycle ratio of 1:1 (Sr:Ti) was in an amorphous phase, and annealing at 800?°C in air crystallized the films into the perovskite phase. This phase change was confirmed by x-ray diffraction and transmission electron microscopy. The as-deposited ALD STO exhibited no discernible switching mechanism, whereas unipolar switching behavior was reproducibly observed with a high resistance ratio (10{sup 8}–10{sup 9}) and strict separation of the set/reset voltages and currents in the annealed ALD STO. Mechanisms for charge transport in both the low- and high-resistance states and for resistive switching in the annealed ALD STO are also proposed.

  8. Impact ionization of excitons in Ge/Si structures with Ge quantum dots grown on the oxidized Si(100) surfaces

    SciTech Connect (OSTI)

    Shklyaev, A. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Shegai, O. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Nakamura, Y. [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Ichikawa, M. [Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2014-05-28

    Photoconductivity (PC) of Si/Ge structures with Ge quantum dots (QDs) grown on the Si(100) surfaces covered with the ultrathin, about 0.3–0.5?nm thick, SiO{sub 2} films is studied as a function of the interband light intensity under various lateral voltages. The structures exhibit PC with steps and a step with a peak at the step edge for low- and high-temperature grown structures, respectively. These PC features are associated with the impact ionization of QD-related excitons. The PC at step edges increases by several orders of magnitude for a certain value which is governed by the balance between rates of photo-generation, recombination, and impact ionization of excitons. The electron localization deeper in Si from the Ge QD layer in conjunction with a narrow binding-energy distribution of excitons is suggested to be the main reason that provides the sharpness of PC steps. The PC appears to be very sensitive to the impact ionization and QD preparation conditions. This allows revealing the specific characteristics of QD structures, related to their electronic and structural properties.

  9. Photo-induced water oxidation at the aqueous GaN (101?0) interface: Deprotonation kinetics of the first proton-coupled electron-transfer step

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ertem, Mehmed Z. [Brookhaven National Lab. (BNL), Upton, NY (United States); Yale Univ., New Haven, CT (United States); Kharche, Neerav [Brookhaven National Lab. (BNL), Upton, NY (United States); Batista, Victor S. [Yale Univ., New Haven, CT (United States); Hybertsen, Mark S. [Brookhaven National Lab. (BNL), Upton, NY (United States); Tully, John C. [Yale Univ., New Haven, CT (United States); Muckerman, James T. [Brookhaven National Lab. (BNL), Upton, NY (United States)

    2015-04-03

    Photoeclectrochemical water splitting plays a key role in a promising path to the carbon-neutral generation of solar fuels. Wurzite GaN and its alloys (e.g., GaN/ZnO and InGaN) are demonstrated photocatalysts for water oxidation, and they can drive the overall water splitting reaction when coupled with co-catalysts for proton reduction. In the present work, we investigate the water oxidation mechanism on the prototypical GaN (101?0) surface using a combined ab initio molecular dynamics and molecular cluster model approach taking into account the role of water dissociation and hydrogen bonding within the first solvation shell of the hydroxylated surface. The investigation of free-energy changes for the four proton-coupled electron-transfer (PCET) steps of the water oxidation mechanism shows that the first PCET step for the conversion of –Ga-OH to –Ga-O?? requires the highest energy input. We further examine the sequential PCETs, with the proton transfer (PT) following the electron transfer (ET), and find that photo-generated holes localize on surface –NH sites is thermodynamically more favorable than –OH sites. However, proton transfer from –OH sites with subsequent localization of holes on oxygen atoms is kinetically favored owing to hydrogen bonding interactions at the GaN (101?0)–water interface. We find that the deprotonation of surface –OH sites is the limiting factor for the generation of reactive oxyl radical ion intermediates and consequently for water oxidation.

  10. Amorphous diamond films

    DOE Patents [OSTI]

    Falabella, S.

    1998-06-09

    Amorphous diamond films having a significant reduction in intrinsic stress are prepared by biasing a substrate to be coated and depositing carbon ions thereon under controlled temperature conditions. 1 fig.

  11. Magnetron sputtered boron films

    DOE Patents [OSTI]

    Makowiecki, Daniel M. (Livermore, CA); Jankowski, Alan F. (Livermore, CA)

    1998-01-01

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

  12. Magnetron sputtered boron films

    DOE Patents [OSTI]

    Makowiecki, D.M.; Jankowski, A.F.

    1998-06-16

    A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence. 8 figs.

  13. Postmodern film adaptation 

    E-Print Network [OSTI]

    Brannon, Courtney Elizabeth

    2013-02-22

    Chapter one explores the reflexive nature of Stephen Daldry's The Hours (2002) as an adaptation from two previous novels: Virginia Woolf's Mrs. Dalloway and Michael Cunningham's The Hours. Through the motif of mirror images, the film consciously...

  14. Polar Smectic Films

    E-Print Network [OSTI]

    Isabelle Kraus; Robert B. Meyer

    1998-11-02

    We report on a new experimental procedure for forming and studying polar smectic liquid crystal films. A free standing smectic film is put in contact with a liquid drop, so that the film has one liquid crystal/liquid interface and one liquid crystal/air interface. This polar environment results in changes in the textures observed in the film, including a boojum texture and a previously unobserved spiral texture in which the winding direction of the spiral reverses at a finite radius from its center. Some aspects of these textures are explained by the presence of a Ksb term in the bulk elastic free energy density that favors a combination of splay and bend deformations.

  15. Scoring an Abstract Contemporary Silent Film

    E-Print Network [OSTI]

    Frost, Crystal

    2014-01-01

    an Abstract Contemporary Silent Film A thesis submitted inAbstract Contemporary Silent Film by Crystal Frost Master ofan original digital audio film score with full sound design

  16. Multifunctional thin film surface

    DOE Patents [OSTI]

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  17. Characterization of few-layered graphene grown by carbon implantation

    SciTech Connect (OSTI)

    Lee, Kin Kiong; McCallum, Jeffrey C.; Jamieson, David N. [Centre for Quantum Computation and Communication Technology, School of Physics, The University of Melbourne, Parkville, Victoria 3010 (Australia)

    2014-02-21

    Graphene is considered to be a very promising material for applications in nanotechnology. The properties of graphene are strongly dependent on defects that occur during growth and processing. These defects can be either detrimental or beneficial to device performance depending on defect type, location and device application. Here we present experimental results on formation of few-layered graphene by carbon ion implantation into nickel films and characteristics of graphene devices formed by graphene transfer and lithographic patterning. Micro-Raman spectroscopy was used to determine the number of graphene layers formed and identify defects arising from the device processing. The graphene films were cleaned by annealing in vacuum. Transport properties of cleaned graphene films were investigated by fabrication of back-gated field-effect transistors, which exhibited high hole and electron mobility of 1935 and 1905 cm2/Vs, respectively.

  18. Multi-jump magnetic switching in ion-beam sputtered amorphous Co{sub 20}Fe{sub 60}B{sub 20} thin films

    SciTech Connect (OSTI)

    Raju, M.; Chaudhary, Sujeet; Pandya, D. K.

    2013-08-07

    Unconventional multi-jump magnetization reversal and significant in-plane uniaxial magnetic anisotropy (UMA) in the ion-beam sputtered amorphous Co{sub 20}Fe{sub 60}B{sub 20}(5–75 nm) thin films grown on Si/amorphous SiO{sub 2} are reported. While such multi-jump behavior is observed in CoFeB(10 nm) film when the magnetic field is applied at 10°–20° away from the easy-axis, the same is observed in CoFeB(12.5 nm) film when the magnetic field is 45°–55° away from easy-axis. Unlike the previous reports of multi-jump switching in epitaxial films, their observance in the present case of amorphous CoFeB is remarkable. This multi-jump switching is found to disappear when the films are crystallized by annealing at 420 °C. The deposition geometry and the energy of the sputtered species appear to intrinsically induce a kind of bond orientation anisotropy in the films, which leads to the UMA in the as-grown amorphous CoFeB films. Exploitation of such multi-jump switching in amorphous CoFeB thin films could be of technological significance because of their applications in spintronic devices.

  19. Nanocrystalline zinc ferrite films studied by magneto-optical spectroscopy

    SciTech Connect (OSTI)

    Lišková-Jakubisová, E. Viš?ovský, Š.; Široký, P.; Hrabovský, D.; Pištora, J.; Sahoo, Subasa C.; Prasad, Shiva; Venkataramani, N.; Bohra, Murtaza; Krishnan, R.

    2015-05-07

    Ferrimagnetic Zn-ferrite (ZnFe{sub 2}O{sub 4}) films can be grown with the ferromagnetic resonance linewidth of 40?Oe at 9.5?GHz without going through a high temperature processing. This presents interest for applications. The work deals with laser ablated ZnFe{sub 2}O{sub 4} films deposited at O{sub 2} pressure of 0.16?mbar onto fused quartz substrates. The films about 120?nm thick are nanocrystalline and their spontaneous magnetization, 4?M{sub s}, depends on the nanograin size, which is controlled by the substrate temperature (T{sub s}). At T{sub s}???350?°C, where the grain distribution peaks around ?20–30?nm, the room temperature 4?M{sub s} reaches a maximum of ?2.3?kG. The films were studied by magnetooptical polar Kerr effect (MOKE) spectroscopy at photon energies between 1 and 5?eV. The complementary characteristics were provided by spectral ellipsometry (SE). Both the SE and MOKE spectra confirmed ferrimagnetic ordering. The structural details correspond to those observed in MgFe{sub 2}O{sub 4} and Li{sub 0.5}Fe{sub 2.5}O{sub 4} spinels. SE experiments confirm the insulator behavior. The films display MOKE amplitudes somewhat reduced with respect to those in Li{sub 0.5}Fe{sub 2.5}O{sub 4} and MgFe{sub 2}O{sub 4} due to a lower degree of spinel inversion and nanocrystalline structure. The results indicate that the films are free of oxygen vacancies and Fe{sup 3+}-Fe{sup 2+} exchange.

  20. Improving thermostability of CrO{sub 2} thin films by doping with Sn

    SciTech Connect (OSTI)

    Ding, Yi; Wang, Ziyu; Liu, Shuo; Shi, Jing; Yin, Di; Yuan, Cheng; Lu, Zhihong; Xiong, Rui

    2014-09-01

    Chromium dioxide (CrO{sub 2}) is an ideal material for spin electronic devices since it has almost 100% spin polarization near Fermi level. However, it is thermally unstable and easily decomposes to Cr{sub 2}O{sub 3} even at room temperature. In this study, we try to improve the thermal stability of CrO{sub 2} thin films by doping with Sn whose oxide has the same structure as CrO{sub 2}. High quality epitaxial CrO{sub 2} and Sn-doped CrO{sub 2} films were grown on single crystalline TiO{sub 2} (100) substrates by chemical vapor deposition. Sn{sup 4+} ions were believed to be doped into CrO{sub 2} lattice and take the lattice positions of Cr{sup 4+}. The magnetic measurements show that Sn-doping leads to a decrease of magnetocrystalline anisotropy. The thermal stabilities of the films were evaluated by annealing the films at different temperatures. Sn-doped films can withstand a temperature up to 510?°C, significantly higher than what undoped films can do (lower than 435?°C), which suggests that Sn-doping indeed enhances the thermal stability of CrO{sub 2} films. Our study also indicates that Sn-doping may not change the essential half metallic properties of CrO{sub 2}. Therefore, Sn-doped CrO{sub 2} is expected to be very promising for applications in spintronic devices.

  1. Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xiao, Zhigang; Kisslinger, Kim

    2015-06-17

    Thin films of hafnium dioxide (HfO2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ring oscillator to test themore »quality of the HfO2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO2 thin film functioned very well as the gate oxide.« less

  2. Towards low-cost high-efficiency GaAs photovoltaics and photoelectrodes grown via vapor transport from a solid source

    SciTech Connect (OSTI)

    Boucher, Jason; Ritenour, Andrew; Boettcher, Shannon W.

    2013-04-29

    Towards low-cost high-efficiency GaAs photovoltaics and photoelectrodes grown via vapor transport from a solid source GaAs is an attractive material for thin-film photovoltaic applications, but is not widely used for terrestrial power generation due to the high cost of metal-organic chemical vapor deposition (MOCVD) techniques typically used for growth. Close space vapor transport is an alternative that allows for rapid growth rates of III-V materials, and does not rely on the toxic and pyrophoric precursors used in MOCVD. We characterize CSVT films of GaAs using photoelectrochemical current-voltage and quantum efficiency measurements. Hole diffusion lengths which exceed 1.5 um are extracted from internal quantum efficiency measurements using the Gartner model. Device physics simulations suggest that solar cells based on these films could reach efficiencies exceeding 24 %. To reach this goal, a more complete understanding of the electrical properties and characterization of defects will be necessary, including measurements on complete solid-state devices. Doping of films is achieved by using source material containing the desired impurity (e.g., Te or Zn). We discuss strategies for growing III-V materials on inexpensive substrates that are not lattice-matched to GaAs.

  3. Structure-property correlation in epitaxial (2 0 0) rutile films on sapphire substrates

    SciTech Connect (OSTI)

    Bayati, M.R.; Joshi, Sh.; Molaei, R.; Narayan, R.J.; Narayan, J.

    2012-03-15

    We have investigated the influence of the deposition variables on photocatalytic properties of epitaxial rutile films. Despite a large lattice misfit of rutile with sapphire substrate, (2 0 0) epitaxial layers were grown on (0 0 0 1)sapphire by domain matching epitaxy paradigm. Using {phi}-scan XRD and cross section TEM, the epitaxial relationship was determined to be rutile(1 0 0)||sapphire(0 0 0 1), rutile(0 0 1)||sapphire(1 0 -1 0), and rutile(0 1 0)||sapphire(1 -2 1 0). Based on the XRD patterns, increasing the repetition rate introduced tensile stress along the film normal direction, which may arise as a result of trapped defects. Formation of such defects was studied by UV-VIS, PL, and XPS techniques. AFM studies showed that the film roughness increases with the repetition rate. Finally, photocatalytic performance of the layers was investigated through measuring decomposition rate of 4-chlorophenol on the films surface. The films grown at higher frequencies revealed higher photocatalytic efficiency. This behavior was mainly related to formation of point defects which enhance the charge separation. - Graphical abstract: In this report, epitaxial rutile TiO{sub 2} thin films were deposited by PLD process under various deposition rates (frequencies) and their physical and chemical properties, especially photocatalytic performance, were investigated. It was found that photocatalytic efficiency improves when frequency increases. This behavior was mainly related to formation of point defects which enhance the charge separation. Highlights: Black-Right-Pointing-Pointer Rutile epitaxial thin films were deposited via PLD process under different frequencies. Black-Right-Pointing-Pointer Defect characteristic was studied. Black-Right-Pointing-Pointer Photocatalytic performance of the layers was investigated.

  4. Homoepitaxy of ZnO and MgZnO Films at 90 °C

    SciTech Connect (OSTI)

    Ehrentraut, Dirk; Goh, Gregory K.L.; Fujii, Katsushi; Ooi, Chin Chun; Quang, Le Hong; Fukuda, Tsuguo; Kano, Masataka; Zhang, Yuantao; Matsuoka, Takashi

    2014-06-01

    The aqueous synthesis of uniform single crystalline homoepitaxial zinc oxide, ZnO, and magnesium zinc oxide, Mg{sub x}Zn{sub 1?x}O, films under very low temperature conditions at T=90 °C and ambient pressure has been explored. A maximum Mg content of 1 mol% was recorded by energy dispersive spectroscopy. The growth on the polar (0 0 0 1) and (0 0 0 1¯) faces resulted in films that are strongly different in their structural and optical quality as evidenced by high-resolution X-ray diffraction, secondary electron microscopy, and photoluminescence. This is a result of the chemistry and temperature of the solution dictating the stability range of growth-governing metastable species. The use of trisodium citrate, Na{sub 3}C{sub 6}H{sub 5}O{sub 7}, yielded coalesced, mirror-like homoepitaxial films whereas adding magnesium nitrate hexahydrate, Mg(NO{sub 3}){sub 2}·6H{sub 2}O, favors the growth of films with pronounced faceting. - Graphical abstract: Homoepitaxial ZnO films grown from aqueous solution below boiling point of water on a ZnO substrate with off-orientation reveal parallel grooves that are characterized by (1 0 1{sup ¯} 1) facets. Adding trisodium citrate yields closed, single-crystalline ZnO films, which can further be functionalized. Alloying with MgO yields MgZnO films with low Mg content only. - Highlights: • A simple method to synthesize uniform single crystalline homoepitaxial ZnO and MgZnO films. • ZnO growth on (0 0 0 1) and (0 0 0 1{sup ¯}) face resulted in films that are strongly different in their structural and optical quality. • Single crystalline MgZnO film was fabricated under mild conditions (90 °C and ambient pressure). • Mg incorporation of nearly 1 mol% was obtained while maintaining single phase wurtzite structure.

  5. Status review of the science and technology of Ultrananoscrystalline Diamond (UNCD (sup {trademark}) films and application to multifunctional devices.

    SciTech Connect (OSTI)

    Auciello, O.; Sumant, A. V.

    2010-07-01

    This review focuses on a status report on the science and technology of ultrananocrystalline diamond (UNCD) films developed and patented at Argonne National Laboratory. The UNCD material has been developed in thin film form and exhibit multifunctionalities applicable to a broad range of macro to nanoscale multifunctional devices. UNCD thin films are grown by microwave plasma chemical vapor deposition (MPCVD) or hot filament chemical vapor deposition (HFCVD) using new patented Ar-rich/CH4 or H2/CH4 plasma chemistries. UNCD films exhibit a unique nanostructure with 2-5 nm grain size (thus the trade name UNCD) and grain boundaries of 0.4-0.6 nm for plain films, and grain sizes of 7-10 nm and grain boundaries of 2-4 nm when grown with nitrogen introduced in the Ar-rich/CH4 chemistry, to produce UNCD films incorporated with nitrogen, which exhibit electrical conductivity up to semi-metallic level. This review provides a status report on the synthesis of UNCD films via MPCVD and integration with dissimilar materials like oxides for piezoactuated MEMS/NEMS, metal films for contacts, and biological matter for a new generation of biomedical devices and biosensors. A broad range of applications from macro to nanoscale multifunctional devices is reviewed, such as coatings for mechanical pumps seals, field-emission cold cathodes, RF MEMS/NEMS resonators and switches for wireless communications and radar systems, NEMS devices, biomedical devices, biosensors, and UNCD as a platform for developmental biology, involving biological cells growth on the surface. Comparisons with nanocrystalline diamond films and technology are made when appropriate.

  6. Tensile Lattice Strain Accelerates Oxygen Surface Exchange and Diffusion in La[subscript 1-x]Sr[subscript x]CoO[subscript 3-?] Thin Films

    E-Print Network [OSTI]

    Kubicek, Markus

    The influence of lattice strain on the oxygen exchange kinetics and diffusion in oxides was investigated on (100) epitaxial La[subscript 1–x]Sr[subscript x]CoO[subscript 3??] (LSC) thin films grown by pulsed laser deposition. ...

  7. Enhanced Magneto-optic Kerr Effect and Magnetic Properties of CeY[subscript 2]Fe[subscript 5]O[subscript 12] Epitaxial Thin Films

    E-Print Network [OSTI]

    Kehlberger, Andreas

    The magnetic and magneto-optic properties of epitaxial CeY[subscript 2]Fe[subscript 5]O[subscript 12] (Ce ? YIG) and Y[subscript 3]Fe[subscript 5]O[subscript 12] (yttrium iron garnet or YIG) thin films grown by pulsed laser ...

  8. Highly stable silicon dioxide films deposited by means of rapid thermal -low-pressure chemical vapor deposition onto InP

    E-Print Network [OSTI]

    Florida, University of

    grown by rapid thermal, low-pressure chemical vapor deposition (RT-LPCVD), using pure oxygen (0,) and 2Highly stable silicon dioxide films deposited by means of rapid thermal - low-pressure chemical vapor deposition onto InP A. Katz, A. Feingold, U. K. Chakrabarti, and S. J. Peat-ton AT&T Bell

  9. A comparison of thick film and thin film traffic stripes 

    E-Print Network [OSTI]

    Keese, Charles J

    1952-01-01

    of this thesis. CONTESTS Introduction ~ ~ ~ ~ ~ 1 Scope and Obfectives Method of Conducting Road Service Tests ~ ~ ~ ~ ~ ~ ~ ~ 7 ~ ~ ~ ~ ~ ~ ~ ~ ~ 8 PART I A Comparison of Paint Films of Various Thicknesses . . . . . . . . ~ ~, ~, ~ 72 App1ioation... of Test Stripes . Results of Thiokness Tests . 13 19 Conclusions 2$ PART II A Comparison of Various Thick Film and Thin Film Traffic Stripes. 26 Paint Stripes Over Adhesive Films Rosin Striping Compounds. . . + ~ . , ~ 29 ~ ~ ~ Preforsmd Plastic...

  10. Epitaxial thin films

    DOE Patents [OSTI]

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  11. Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N/GaN grown by molecular-beam epitaxy

    E-Print Network [OSTI]

    Yu, Edward T.

    that the key carrier transport process is emission of electrons from a trap state near the metal independent of temperature, indicating that conduction is dominated by tunneling transport. At higher current in n-type Schottky contacts remains an outstanding challenge in the development of electronic

  12. FILM STUDIES SCHOOL OF PHILOSOPHICAL, ANTHROPOLOGICAL,

    E-Print Network [OSTI]

    Brierley, Andrew

    FILM STUDIES SCHOOL OF PHILOSOPHICAL, ANTHROPOLOGICAL, AND FILM STUDIES FILM STUDIES HANDBOOK FOR TAUGHT POSTGRADUATE STUDENTS On the MLitt/MPhil IN FILM STUDIES 2013/2014 #12;2 FILM STUDIES HANDBOOK FOR POSTGRADUATE STUDENTS THE FILM STUDIES POSTGRADUATE HANDBOOK AND THE UNIVERSITY POSTGRADUATE HANDBOOK

  13. Montana State University 1 Film Option

    E-Print Network [OSTI]

    Maxwell, Bruce D.

    Montana State University 1 Film Option Students in the Film Option gain hands have opportunities to engage in film production throughout the program, starting in the first year and culminating in a senior thesis film project. At the same time, students study film history, film aesthetics

  14. Unusual thermopower of inhomogeneous graphene grown by chemical vapor deposition

    SciTech Connect (OSTI)

    Nam, Youngwoo, E-mail: youngwoo.nam@chalmers.se [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Sun, Jie; Lindvall, Niclas; Yurgens, August [Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden); Jae Yang, Seung; Rae Park, Chong [Department of Materials Science and Engineering, Seoul National University, Seoul 151-747 (Korea, Republic of); Woo Park, Yung [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)

    2014-01-13

    We report on thermopower (TEP) and resistance measurements of inhomogeneous graphene grown by chemical vapor deposition (CVD). Unlike the conventional resistance of pristine graphene, the gate-dependent TEP shows a large electron-hole asymmetry. This can be accounted for by inhomogeneity of the CVD-graphene where individual graphene regions contribute with different TEPs. At the high magnetic field and low temperature, the TEP has large fluctuations near the Dirac point associated with the disorder in the CVD-graphene. TEP measurements reveal additional characteristics of CVD-graphene, which are difficult to obtain from the measurement of resistance alone.

  15. Thin films and uses

    DOE Patents [OSTI]

    Baskaran, Suresh (Kennewick, WA); Graff, Gordon L. (Kennewick, WA); Song, Lin (Richland, WA)

    1998-01-01

    The invention provides a method for synthesizing a titanium oxide-containing film comprising the following steps: (a) preparing an aqueous solution of a titanium chelate with a titanium molarity in the range of 0.01M to 0.6M. (b) immersing a substrate in the prepared solution, (c) decomposing the titanium chelate to deposit a film on the substrate. The titanium chelate maybe decomposed acid, base, temperature or other means. A preferred method provides for the deposit of adherent titanium oxide films from C2 to C5 hydroxy carboxylic acids. In another aspect the invention is a novel article of manufacture having a titanium coating which protects the substrate against ultraviolet damage. In another aspect the invention provides novel semipermeable gas separation membranes, and a method for producing them.

  16. Measurement of the hot electron mean free path and the momentum relaxation rate in GaN

    SciTech Connect (OSTI)

    Suntrup, Donald J.; Gupta, Geetak; Li, Haoran; Keller, Stacia; Mishra, Umesh K.

    2014-12-29

    We present a method for measuring the mean free path and extracting the momentum relaxation time of hot electrons in GaN using the hot electron transistor (HET). In this device, electrons are injected over a high energy emitter barrier into the base where they experience quasi-ballistic transport well above the conduction band edge. After traversing the base, high energy electrons either surmount the base-collector barrier and become collector current or reflect off the barrier and become base current. We fabricate HETs with various base thicknesses and measure the common emitter transfer ratio (?) for each device. The mean free path is extracted by fitting ? to a decaying exponential as a function of base width and the relaxation time is computed using a suitable injection velocity. For devices with an injection energy of ?1?eV, we measure a hot electron mean free path of 14?nm and calculate a momentum relaxation time of 16 fs. These values are in agreement with theoretical calculations where longitudinal optical phonon scattering is the dominant momentum relaxation mechanism.

  17. NMR characterization of thin films

    DOE Patents [OSTI]

    Gerald, II, Rex E. (Brookfield, IL); Klingler, Robert J. (Glenview, IL); Rathke, Jerome W. (Homer Glen, IL); Diaz, Rocio (Chicago, IL); Vukovic, Lela (Westchester, IL)

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  18. NMR characterization of thin films

    DOE Patents [OSTI]

    Gerald II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2010-06-15

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  19. Thin film photovoltaic device

    DOE Patents [OSTI]

    Catalano, A.W.; Bhushan, M.

    1982-08-03

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

  20. Thin film photovoltaic device

    DOE Patents [OSTI]

    Catalano, Anthony W. (Wilmington, DE); Bhushan, Manjul (Wilmington, DE)

    1982-01-01

    A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

  1. carleton.ca Film Studies

    E-Print Network [OSTI]

    Dawson, Jeff W.

    carleton.ca Film Studies #12;Ever since the first spectator pressed his eye to the peephole has been transfixed by the motion picture. The year was 1894 and the film industry has never looked on the British coast crashed over them. By the 1920s and 30s, audiences worshipped film stars such as Gloria

  2. Methods for producing complex films, and films produced thereby

    DOE Patents [OSTI]

    Duty, Chad E.; Bennett, Charlee J. C.; Moon, Ji -Won; Phelps, Tommy J.; Blue, Craig A.; Dai, Quanqin; Hu, Michael Z.; Ivanov, Ilia N.; Jellison, Jr., Gerald E.; Love, Lonnie J.; Ott, Ronald D.; Parish, Chad M.; Walker, Steven

    2015-11-24

    A method for producing a film, the method comprising melting a layer of precursor particles on a substrate until at least a portion of the melted particles are planarized and merged to produce the film. The invention is also directed to a method for producing a photovoltaic film, the method comprising depositing particles having a photovoltaic or other property onto a substrate, and affixing the particles to the substrate, wherein the particles may or may not be subsequently melted. Also described herein are films produced by these methods, methods for producing a patterned film on a substrate, and methods for producing a multilayer structure.

  3. Impact of strain on electronic defects in (Mg,Zn)O thin films

    SciTech Connect (OSTI)

    Schmidt, Florian Müller, Stefan; Wenckstern, Holger von; Benndorf, Gabriele; Pickenhain, Rainer; Grundmann, Marius

    2014-09-14

    We have investigated the impact of strain on the incorporation and the properties of extended and point defects in (Mg,Zn)O thin films by means of photoluminescence, X-ray diffraction, deep-level transient spectroscopy (DLTS), and deep-level optical spectroscopy. The recombination line Y?, previously detected in ZnO thin films grown on an Al-doped ZnO buffer layer and attributed to tensile strain, was exclusively found in (Mg,Zn)O samples being under tensile strain and is absent in relaxed or compressively strained thin films. Furthermore a structural defect E3´ can be detected via DLTS measurements and is only incorporated in tensile strained samples. Finally it is shown that the omnipresent deep-level E3 in ZnO can only be optically recharged in relaxed ZnO samples.

  4. Control method and system for use when growing thin-films on semiconductor-based materials

    DOE Patents [OSTI]

    McKee, Rodney A. (Kingston, TN); Walker, Frederick J. (Oak Ridge, TN)

    2001-01-01

    A process and system for use during the growth of a thin film upon the surface of a substrate by exposing the substrate surface to vaporized material in a high vacuum (HV) facility involves the directing of an electron beam generally toward the surface of the substrate as the substrate is exposed to vaporized material so that electrons are diffracted from the substrate surface by the beam and the monitoring of the pattern of electrons diffracted from the substrate surface as vaporized material settles upon the substrate surface. When the monitored pattern achieves a condition indicative of the desired condition of the thin film being grown upon the substrate, the exposure of the substrate to the vaporized materials is shut off or otherwise adjusted. To facilitate the adjustment of the crystallographic orientation of the film relative to the electron beam, the system includes a mechanism for altering the orientation of the surface of the substrate relative to the electron beam.

  5. Resistance switching in epitaxial SrCoO{sub x} thin films

    SciTech Connect (OSTI)

    Tambunan, Octolia T.; Parwanta, Kadek J.; Acharya, Susant K.; Lee, Bo Wha; Jung, Chang Uk; Kim, Yeon Soo; Park, Bae Ho; Jeong, Huiseong; Park, Ji-Yong; Cho, Myung Rae; Park, Yun Daniel; Choi, Woo Seok; Kim, Dong-Wook; Jin, Hyunwoo; Lee, Suyoun; Song, Seul Ji; Kang, Sung-Jin; Kim, Miyoung; Hwang, Cheol Seong

    2014-08-11

    We observed bipolar switching behavior from an epitaxial strontium cobaltite film grown on a SrTiO{sub 3} (001) substrate. The crystal structure of strontium cobaltite has been known to undergo topotactic phase transformation between two distinct phases: insulating brownmillerite (SrCoO{sub 2.5}) and conducting perovskite (SrCoO{sub 3??}) depending on the oxygen content. The current–voltage characteristics of the strontium cobaltite film showed that it could have a reversible insulator-to-metal transition triggered by electrical bias voltage. We propose that the resistance switching in the SrCoO{sub x} thin film could be related to the topotactic phase transformation and the peculiar structure of SrCoO{sub 2.5}.

  6. Highly conducting SrMoO{sub 3} thin films for microwave applications

    SciTech Connect (OSTI)

    Radetinac, Aldin Mani, Arzhang; Ziegler, Jürgen; Alff, Lambert; Komissinskiy, Philipp; Melnyk, Sergiy; Nikfalazar, Mohammad; Zheng, Yuliang; Jakoby, Rolf

    2014-09-15

    We have measured the microwave resistance of highly conducting perovskite oxide SrMoO{sub 3} thin film coplanar waveguides. The epitaxial SrMoO{sub 3} thin films were grown by pulsed laser deposition and showed low mosaicity and smooth surfaces with a root mean square roughness below 0.3?nm. Layer-by-layer growth could be achieved for film thicknesses up to 400?nm as monitored by reflection high-energy electron diffraction and confirmed by X-ray diffraction. We obtained a constant microwave resistivity of 29???·cm between 0.1 and 20?GHz by refining the frequency dependence of the transmission coefficients. Our result shows that SrMoO{sub 3} is a viable candidate as a highly conducting electrode material for all-oxide microwave electronic devices.

  7. Process for growing a film epitaxially upon an oxide surface and structures formed with the process

    DOE Patents [OSTI]

    McKee, Rodney Allen (Kingston, TN); Walker, Frederick Joseph (Oak Ridge, TN)

    1998-01-01

    A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

  8. Process for growing a film epitaxially upon an oxide surface and structures formed with the process

    DOE Patents [OSTI]

    McKee, Rodney A. (Kingston, TN); Walker, Frederick J. (Oak Ridge, TN)

    1995-01-01

    A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface, such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel. The first layer of metal oxide built upon the surface includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 .mu.m for optical device applications.

  9. Damage mechanisms in thin film solar cells during sputtering deposition of transparent conductive coatings

    SciTech Connect (OSTI)

    Fan Qihua; Liao Xianbo [Department of Physics and Astronomy, University of Toledo, 2801 West Bancroft Street, Toledo, Ohio 43606 (United States); Deng, Michael [Xunlight Corporation, 3145 Nebraska Avenue, Toledo, Ohio 43607 (United States); Deng Xunming [Department of Physics and Astronomy, University of Toledo, 2801 West Bancroft Street, Toledo, Ohio 43606 (United States); Xunlight Corporation, 3145 Nebraska Avenue, Toledo, Ohio 43607 (United States)

    2009-02-01

    Amorphous silicon (a-Si) based thin film solar cell grown on flexible stainless steel substrate is one of the most promising energy conversion devices in the future. This type of solar cell uses a transparent conductive oxide (TCO) film as top electrode. It has been a widely accepted opinion that the radio frequency sputtering deposition of the TCO film produces a higher yield than direct current sputtering, and the reason is not clear. Here we show that the damage to the solar cell during the sputtering process is caused by a reverse bias applied to the n-i-p junction. This reverse bias is related to the characteristics of plasma discharge. The mechanism we reveal may significantly affect the solar cell process.

  10. High quality ZnO:Al transparent conducting oxide films synthesized by pulsed filtered cathodic arc deposition

    SciTech Connect (OSTI)

    Anders, Andre; Lim, Sunnie H.N.; Yu, Kin Man; Andersson, Joakim; Rosen, Johanna; McFarland, Mike; Brown, Jeff

    2009-04-24

    Aluminum-doped zinc oxide, ZnO:Al or AZO, is a well-known n-type transparent conducting oxide with great potential in a number of applications currently dominated by indium tin oxide (ITO). In this study, the optical and electrical properties of AZO thin films deposited on glass and silicon by pulsed filtered cathodic arc deposition are systematically studied. In contrast to magnetron sputtering, this technique does not produce energetic negative ions, and therefore ion damage can be minimized. The quality of the AZO films strongly depends on the growth temperature while only marginal improvements are obtained with post-deposition annealing. The best films, grown at a temperature of about 200?C, have resistivities in the low to mid 10-4 Omega cm range with a transmittance better than 85percent in the visible part of the spectrum. It is remarkable that relatively good films of small thickness (60 nm) can be fabricated using this method.

  11. Heteroepitaxial growth of highly conductive metal oxide RuO{sub 2} thin films by pulsed laser deposition

    SciTech Connect (OSTI)

    Jia, Q.X.; Wu, X.D.; Foltyn, S.R.; Findikoglu, A.T.; Tiwari, P.; Zheng, J.P.; Jow, T.R.

    1995-09-18

    Highly conductive ruthenium oxide (RuO{sub 2}) has been epitaxially grown on LaAlO{sub 3} substrates by pulsed laser deposition. The RuO{sub 2} film is ({ital h}00) oriented normal to the substrate surface. The heteroepitaxial growth of RuO{sub 2} on LaAlO{sub 3} is demonstrated by the strong in-plane orientation of thin films with respect to the major axes of the substrate. High crystallinity of RuO{sub 2} thin films is also determined from Rutherford backscattering channeling measurements. Electrical measurements on the RuO{sub 2} thin films demonstrate a quite low room-temperature resistivity of 35{plus_minus}2 {mu}{Omega} cm at deposition temperatures of above 500 {degree}C. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  12. Superconducting epitaxial thin films of CeNi{sub x}Bi{sub 2} with a bismuth square net structure

    SciTech Connect (OSTI)

    Buckow, Alexander; Kupka, Katharina; Retzlaff, Reiner; Kurian, Jose; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, 64287 Darmstadt (Germany)

    2012-10-15

    We have grown highly epitaxial and phase pure thin films of the arsenic-free pnictide compound CeNi{sub x}Bi{sub 2} on (100) MgO substrates by reactive molecular beam epitaxy (RMBE). X-ray diffraction and reflection high-energy electron diffraction of the films confirm the ZrCuSiAs structure with a Bi square net layer. Superconductivity was observed in magnetization and resistivity measurements for x= 0.75 to 0.93 in these CeNi{sub x}Bi{sub 2} thin films with the highest critical temperature of 4.05 K and a resistive transition width of 0.1 K for x= 0.86. Our results indicate that thin film deposition by RMBE provides a tool to synthesize high-quality pnictide superconductors of the novel 112 type.

  13. The structural, electrical, and optical properties of hydrogenated chromium-doped CdO films

    SciTech Connect (OSTI)

    Dakhel, A.A.; Hamad, H.

    2013-12-15

    Cadmium oxide thin films doped with different amounts of chromium and annealed in hydrogen atmosphere have been grown on glass substrates by means of physical vapour deposition (PVD) method. The structural, electrical, and optical properties of the prepared Cr-doped CdO (CdO:Cr–H) films were systematically studied. The structural investigations show that the incorporated Cr ions mainly occupied locations in interstitial positions of CdO lattice. The bandgap engineer by Cr incorporation and hydrogenation were studied. The variations of the electrical parameters of CdO:Cr–H films with Cr incorporation and hydrogenation were investigated. It was established that among the investigated samples, the largest mobility and conductivity were measured with 1.5%:Cr–H film. Therefore, hydrogenated CdO:Cr films can be effectively used in different applications of near infrared-transparent-conducting-oxide (NIR-TCO). - Graphical abstract: Optoelectronic properties of synthesised chromium-doped CdO thin films. It was established that the largest mobility (53.4 cm{sup 2}/V.s) and conductivity (2136.8 S/cm) were measured in 1.5%:Cr–H doped CdO film. Therefore, such films can be effectively used in near infrared-transparent-conducting-oxide (NIR-TCO). - Highlights: • The properties of CdO films annealed in H{sub 2} gas were systematically studied. • Cr{sup 3+} ions most likely occupied interstitial locations in CdO lattice and as donors. • Improvement of conductivity parameters with Cr doping and H annealing. • Bandgap narrowing observed with Cd-doping.

  14. Modeling and control of thin film surface morphology: application to thin film solar cells

    E-Print Network [OSTI]

    Huang, Jianqiao

    2012-01-01

    151 Two-stage thin film deposition process15 Description of thin film depositionProcess Model . . . . 54 Porous Thin-Film Deposition Process

  15. Influence of Gas Flow Rate for Formation of Aligned Nanorods in ZnO Thin Films for Solar-Driven Hydrogen Production

    SciTech Connect (OSTI)

    Shet, S.; Chen, L.; Tang, H.; Nuggehalli, R.; Wang, H.; Yan, Y.; Turner, J.; Al-Jassim, M.

    2012-04-01

    ZnO thin films have been deposited in mixed Ar/N{sub 2} gas ambient at substrate temperature of 500 C by radiofrequency sputtering of ZnO targets. We find that an optimum N{sub 2}-to-Ar ratio in the deposition ambient promotes the formation of well-aligned nanorods. ZnO thin films grown in ambient with 25% N{sub 2} gas flow rate promoted nanorods aligned along c-axis and exhibit significantly enhanced photoelectrochemical (PEC) response, compared with ZnO thin films grown in an ambient with different N{sub 2}-to-Ar gas flow ratios. Our results suggest that chamber ambient is critical for the formation of aligned nanostructures, which offer potential advantages for improving the efficiency of PEC water splitting for H{sub 2} production.

  16. Laser Induced Breakdown Spectroscopy and Applications Toward Thin Film Analysis

    E-Print Network [OSTI]

    Owens, Travis Nathan

    2011-01-01

    Organic Thin Films 4.1 Introduction . . . . . . . . . . . .T iO 2 thin films. . . . . . . . . . . . . . . . . . . . .properties of the organic thin films. . . . . . . . .

  17. Optical spectroscopy of sputtered nanometer-thick yttrium iron garnet films

    SciTech Connect (OSTI)

    Jakubisova-Liskova, Eva Visnovsky, Stefan; Chang, Houchen; Wu, Mingzhong

    2015-05-07

    Nanometer (nm)-thick yttrium iron garnet (Y{sub 3}Fe{sub 5}O{sub 12}, YIG) films present interest for spintronics. This work employs spectral ellipsometry and magneto-optic Kerr effect (MOKE) spectra to characterize nm-thick YIG films grown on single-crystal Gd{sub 3}Ga{sub 5}O{sub 12} substrates by magnetron sputtering. The thickness (t) of the films ranges between 10?nm and 40?nm. Independent on t, the polar MOKE hysteresis loops saturate in the field of about 1.8 kOe, consistent with the saturation magnetization in bulk YIG (4?M{sub s}???1.75?kG). The MOKE spectrum measured at photon energies between 1.3?eV and 4.5?eV on the 38-nm-thick film agrees with that measured on single-crystal YIG bulk materials. The MOKE spectrum of the 12-nm-thick film still preserves the structure of the bulk YIG but its amplitude at lower photon energies is modified due to the fact that the radiation penetration depth exceeds 20?nm. The t dependence of the MOKE amplitude is consistent with MOKE calculations. The results indicate that the films are stoichiometric, strain free, without Fe{sup 2+}, and preserve bulk YIG properties down to t ? 10?nm.

  18. Orientation filtering for crystalline films

    DOE Patents [OSTI]

    Smith, Henry I. (Sudbury, MA); Atwater, Harry A. (Somerville, MA); Thompson, Carl V. (Watertown, MA); Geis, Michael W. (Acton, MA)

    1986-12-30

    A substrate is coated with a film to be recrystallized. A pattern of crystallization barriers is created in the film, for example, by etching voids in the film. An encapsulation layer is generally applied to protect the film, fill the voids and otherwise enhance a recrystallization process. Recrystallization is carried out such that certain orientations pass preferentially through the barrier, generally as a result of growth-velocity anisotropy. The result is a film of a specific predetermined crystallographic orientation, a range of orientations or a set of discrete orientations.

  19. Process to form mesostructured films

    DOE Patents [OSTI]

    Brinker, C. Jeffrey (Albuquerque, NM); Anderson, Mark T. (Woodbury, MN); Ganguli, Rahul (Camarillo, CA); Lu, Yunfeng (Albuquerque, NM)

    1999-01-01

    This invention comprises a method to form a family of supported films film with pore size in the approximate range 0.8-20 nm exhibiting highly ordered microstructures and porosity derived from an ordered micellar or liquid-crystalline organic-inorganic precursor structure that forms during film deposition. Optically transparent, 100-500-nm thick films exhibiting a unique range of microstructures and uni-modal pore sizes are formed in seconds in a continuous coating operation. Applications of these films include sensors, membranes, low dielectric constant interlayers, anti-reflective coatings, and optical hosts.

  20. Thin film photovoltaic cell

    DOE Patents [OSTI]

    Meakin, John D. (Newark, DE); Bragagnolo, Julio (Newark, DE)

    1982-01-01

    A thin film photovoltaic cell having a transparent electrical contact and an opaque electrical contact with a pair of semiconductors therebetween includes utilizing one of the electrical contacts as a substrate and wherein the inner surface thereof is modified by microroughening while being macro-planar.

  1. X-ray microstructural analysis of nanocrystalline TiZrN thin films by diffraction pattern modeling

    SciTech Connect (OSTI)

    Escobar, D.; Ospina, R.; Gómez, A.G.; Restrepo-Parra, E.; Arango, P.J.

    2014-02-15

    A detailed microstructural characterization of nanocrystalline TiZrN thin films grown at different substrate temperatures (T{sub S}) was carried out by X-ray diffraction (XRD). Total diffraction pattern modeling based on more meaningful microstructural parameters, such as crystallite size distribution and dislocation density, was performed to describe the microstructure of the thin films more precisely. This diffraction modeling has been implemented and used mostly to characterize powders, but the technique can be very useful to study hard thin films by taking certain considerations into account. Nanocrystalline films were grown by using the cathodic pulsed vacuum arc technique on stainless steel 316L substrates, varying the temperature from room temperature to 200 °C. Further surface morphology analysis was performed to study the dependence of grain size on substrate temperature using atomic force microscopy (AFM). The crystallite and surface grain sizes obtained and the high density of dislocations observed indicate that the films underwent nanostructured growth. Variations in these microstructural parameters as a function of T{sub S} during deposition revealed a competition between adatom mobility and desorption processes, resulting in a specific microstructure. These films also showed slight anisotropy in their microstructure, and this was incorporated into the diffraction pattern modeling. The resulting model allowed for the films' microstructure during synthesis to be better understood according to the experimental results obtained. - Highlights: • Mobility and desorption competition generates a critical temperature. • A microstructure anisotropy related to the local strain was observed in thin films. • Adatom mobility and desorption influence grain size and microstrain.

  2. Photo-induced water oxidation at the aqueous GaN (101¯0) interface: Deprotonation kinetics of the first proton-coupled electron-transfer step

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ertem, Mehmed Z.; Kharche, Neerav; Batista, Victor S.; Hybertsen, Mark S.; Tully, John C.; Muckerman, James T.

    2015-03-12

    Photoeclectrochemical water splitting plays a key role in a promising path to the carbon-neutral generation of solar fuels. Wurzite GaN and its alloys (e.g., GaN/ZnO and InGaN) are demonstrated photocatalysts for water oxidation, and they can drive the overall water splitting reaction when coupled with co-catalysts for proton reduction. In the present work, we investigate the water oxidation mechanism on the prototypical GaN (101¯0) surface using a combined ab initio molecular dynamics and molecular cluster model approach taking into account the role of water dissociation and hydrogen bonding within the first solvation shell of the hydroxylated surface. The investigation ofmore »free-energy changes for the four proton-coupled electron-transfer (PCET) steps of the water oxidation mechanism shows that the first PCET step for the conversion of –Ga-OH to –Ga-O?? requires the highest energy input. We further examine the sequential PCETs, with the proton transfer (PT) following the electron transfer (ET), and find that photo-generated holes localize on surface –NH sites is thermodynamically more favorable than –OH sites. However, proton transfer from –OH sites with subsequent localization of holes on oxygen atoms is kinetically favored owing to hydrogen bonding interactions at the GaN (101¯0)–water interface. We find that the deprotonation of surface –OH sites is the limiting factor for the generation of reactive oxyl radical ion intermediates and consequently for water oxidation.« less

  3. Method for making carbon films

    DOE Patents [OSTI]

    Tan, Ming X. (Livermore, CA)

    1999-01-01

    A method for treating an organic polymer material, preferably a vinylidene chloride/vinyl chloride copolymer (Saran) to produce a flat sheet of carbon film material having a high surface area (.apprxeq.1000 m.sup.2 /g) suitable as an electrode material for super capacitor applications. The method comprises heating a vinylidene chloride/vinyl chloride copolymer film disposed between two spaced apart graphite or ceramic plates to a first temperature of about 160.degree. C. for about 14 hours to form a stabilized vinylidene chloride/vinyl chloride polymer film, thereafter heating the stabilized film to a second temperature of about 750.degree. C. in an inert atmosphere for about one hour to form a carbon film; and finally activating the carbon film to increase the surface area by heating the carbon film in an oxidizing atmosphere to a temperature of at least 750-850.degree. C. for between 1-6 hours.

  4. Method for making carbon films

    DOE Patents [OSTI]

    Tan, M.X.

    1999-07-29

    A method for treating an organic polymer material, preferably a vinylidene chloride/vinyl chloride copolymer (Saran) to produce a flat sheet of carbon film material having a high surface area ([approx equal]1000 m[sup 2] /g) suitable as an electrode material for super capacitor applications. The method comprises heating a vinylidene chloride/vinyl chloride copolymer film disposed between two spaced apart graphite or ceramic plates to a first temperature of about 160 C for about 14 hours to form a stabilized vinylidene chloride/vinyl chloride polymer film, thereafter heating the stabilized film to a second temperature of about 750 C in an inert atmosphere for about one hour to form a carbon film; and finally activating the carbon film to increase the surface area by heating the carbon film in an oxidizing atmosphere to a temperature of at least 750--850 C for between 1--6 hours. 2 figs.

  5. Thin film superconductor magnetic bearings

    DOE Patents [OSTI]

    Weinberger, Bernard R. (Avon, CT)

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  6. Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films

    SciTech Connect (OSTI)

    Van Bui, Hao, E-mail: H.VanBui@utwente.nl; Wiggers, Frank B.; Gupta, Anubha; Nguyen, Minh D.; Aarnink, Antonius A. I.; Jong, Michel P. de; Kovalgin, Alexey Y., E-mail: A.Y.Kovalgin@utwente.nl [MESA Institute for Nanotechnology, University of Twente, P. O. Box 217, 7500 AE Enschede (Netherlands)

    2015-01-01

    The authors have studied and compared the initial growth and properties of AlN films deposited on Si(111) by thermal and plasma-enhanced atomic layer deposition (ALD) using trimethylaluminum and either ammonia or a N{sub 2}-H{sub 2} mixture as precursors. In-situ spectroscopic ellipsometry was employed to monitor the growth and measure the refractive index of the films during the deposition. The authors found that an incubation stage only occurred for thermal ALD. The linear growth for plasma-enhanced ALD (PEALD) started instantly from the beginning due to the higher nuclei density provided by the presence of plasma. The authors observed the evolution of the refractive index of AlN during the growth, which showed a rapid increase up to a thickness of about 30?nm followed by a saturation. Below this thickness, higher refractive index values were obtained for AlN films grown by PEALD, whereas above that the refractive index was slightly higher for thermal ALD films. X-ray diffraction characterization showed a wurtzite crystalline structure with a (101{sup ¯}0) preferential orientation obtained for all the layers with a slightly better crystallinity for films grown by PEALD.

  7. Strain relaxation in epitaxial SrRuO{sub 3} thin films on LaAlO{sub 3} substrates

    SciTech Connect (OSTI)

    Gao, M.; Du, H.; Dai, C.; Lin, Y. [State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)] [State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Ma, C. R.; Liu, M.; Collins, G.; Zhang, Y. M.; Chen, C. L. [Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, Texas 78249, USA and Department of Physics and The Texas Center for Superconductivity, University of Houston, Houston, Texas 77204 (United States)] [Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, Texas 78249, USA and Department of Physics and The Texas Center for Superconductivity, University of Houston, Houston, Texas 77204 (United States)

    2013-09-30

    Strain relaxation behavior of epitaxial SrRuO{sub 3} thin films on (001) LaAlO{sub 3} substrates was investigated using high resolution X-ray diffraction. Lattice distortion and dislocation densities were systematically studied with samples under different growth conditions. Reciprocal space maps reveal different strain relaxation behavior in SrRuO{sub 3} thin films grown at different temperatures. Two kinds of strain relaxation mechanisms were proposed to understand the growth dynamics, including the evolution of threading dislocations and the tilt of crystalline planes.

  8. Thin films of InP for photovoltaic energy conversion. Final report, July 5, 1979-July 4, 1980

    SciTech Connect (OSTI)

    Manasevit, H.M.; Ruth, R.P.; Moudy, L.A.; Yang, J.J.J.; Johnson, R.E.

    1980-08-01

    Research to develop a low-cost high-efficiency thin-film InP heterojunction solar cell, using the metalorganic chemical vapor deposition (MO-CVD) technique for InP film growth on suitable substrates is reported. Heterostructure devices of CdS/InP, using InP films prepared by CO-CVD, were prepared and characterized. The research effort involved three major technical tasks: (1) materials growth; (2) materials characterization; and (3) device fabrication and characterization. The principal results achieved in the investigations are as follows: (1) temperature-activated orientation-dependent background donor doping was observed in undoped epitaxial InP films; (2) p-type epitaxial InP films were prepared by Zn and by Cd doping during growth; (3) the efficacy of Cd doping was found to vary exponentially with the reciprocal of the deposition temperature in the range 650 to 730/sup 0/C; (4) Cd doping appeared to offer no clear advantages over Zn doping for preparation of p-type InP by the MO-CVD process; (5) GaP grown by MO-CVD was investigated as a possible intermediate-layer material for growth of InP films on low-cost substrates; (6) p/sup +/GaAs polycrystalline layers (p > /sup 19/ cm/sup -3/) were successfully prepared by Zn doping during MO-CVD growth on various low-cost substrates and used as surfaces for growth of p-type polycrystalline InP:Zn layers; (7) nCdS/pInP heterojunction solar cells were prepared by vacuum deposition of CdS onto p-type InP films grown by MO-CVD as well as on InP single-crystal wafers; (8) the best polycrystalline CdS/InP cells were obtained in structures on P/sup +/GaAs:Zn layers on both Mo sheet and Corning Code 0317 Glass; and (9) structure analyses of the Cds films used in the heterojunction cells indicated the presence of polycrystalline hexagonal CdS even in films grown on single-crystal InP films or bulk-wafer substrates. (WHK)

  9. Molecular layer deposition of alucone films using trimethylaluminum and hydroquinone

    SciTech Connect (OSTI)

    Choudhury, Devika; Sarkar, Shaibal K.; Mahuli, Neha

    2015-01-01

    A hybrid organic–inorganic polymer film grown by molecular layer deposition (MLD) is demonstrated here. Sequential exposures of trimethylaluminum [Al(CH{sub 3}){sub 3}] and hydroquinone [C{sub 6}H{sub 4}(OH){sub 2}] are used to deposit the polymeric films, which is a representative of a class of aluminum oxide polymers known as “alucones.” In-situ quartz crystal microbalance (QCM) studies are employed to determine the growth characteristics. An average growth rate of 4.1 Å per cycle at 150?°C is obtained by QCM and subsequently verified with x-ray reflectivity measurements. Surface chemistry during each MLD-half cycle is studied in depth by in-situ Fourier transform infrared (FTIR) vibration spectroscopy. Self limiting nature of the reaction is confirmed from both QCM and FTIR measurements. The conformal nature of the deposit, typical for atomic layer deposition and MLD, is verified with transmission electron microscopy imaging. Secondary ion mass spectroscopy measurements confirm the uniform elemental distribution along the depth of the films.

  10. Ultrafast transient reflectance of epitaxial semiconducting perovskite thin films

    SciTech Connect (OSTI)

    Smolin, S. Y.; Guglietta, G. W.; Baxter, J. B. E-mail: smay@coe.drexel.edu; Scafetta, M. D.; May, S. J. E-mail: smay@coe.drexel.edu

    2014-07-14

    Ultrafast pump-probe transient reflectance (TR) spectroscopy was used to study carrier dynamics in an epitaxial perovskite oxide thin film of LaFeO{sub 3} (LFO) with a thickness of 40 unit cells (16?nm) grown by molecular beam epitaxy on (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT). TR spectroscopy shows two negative transients in reflectance with local maxima at ?2.5?eV and ?3.5?eV which correspond to two optical transitions in LFO as determined by ellipsometry. The kinetics at these transients were best fit with an exponential decay model with fast (5–40 ps), medium (?200 ps), and slow (??3?ns) components that we attribute mainly to recombination of photoexcited carriers. Moreover, these reflectance transients did not completely decay within the observable time window, indicating that ?10% of photoexcited carriers exist for at least 3?ns. This work illustrates that TR spectroscopy can be performed on thin (<20?nm) epitaxial oxide films to provide a quantitative understanding of recombination lifetimes, which are important parameters for the potential utilization of perovskite films in photovoltaic and photocatalytic applications.

  11. Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

    SciTech Connect (OSTI)

    Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

    2014-11-07

    Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280?nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

  12. Evaluation of growth methods for the heteroepitaxy of non-polar (11-20) GaN on sapphire by MOVPE

    E-Print Network [OSTI]

    Oehler, F.; Sutherland, D.; Zhu, T.; Emery, R.; Badcock, T. J.; Kappers, M. J.; Humphreys, C. J.; Dawson, P.; Oliver, R. A.

    2014-09-16

    interlayer. Keywords: A3 Metalorganic vapor phase epitaxy, B1 Nitrides, A1 Defects, A1 Characterization 1. Introduction Hexagonal gallium nitride (GaN) presents two stable growth directions inclined at 90? angle to the c-direction. Respectively named a... is kept constant at 20 standard litres per minute (SLM) by bal- ancing the flow rates of the carrier gas and NH3. Unless otherwise specified, the total reactor pressure is 100 Torr and H2 is used as the carrier gas. The growth temperatures quoted...

  13. Native defects in MBE-grown CdTe

    SciTech Connect (OSTI)

    Olender, Karolina; Wosinski, Tadeusz; Makosa, Andrzej; Tkaczyk, Zbigniew; Kolkovsky, Valery; Karczewski, Grzegorz

    2013-12-04

    Deep-level traps in both n- and p-type CdTe layers, grown by molecular-beam epitaxy on GaAs substrates, have been investigated by means of deep-level transient spectroscopy (DLTS). Four of the traps revealed in the DLTS spectra, which displayed exponential kinetics for capture of charge carriers into the trap states, have been assigned to native point defects: Cd interstitial, Cd vacancy, Te antisite defect and a complex formed of the Te antisite and Cd vacancy. Three further traps, displaying logarithmic capture kinetics, have been ascribed to electron states of treading dislocations generated at the mismatched interface with the substrate and propagated through the CdTe layer.

  14. Filming the Family: A Documentary Film to Educate Clinicians about Family Caregivers of Patients with Brain Tumors

    E-Print Network [OSTI]

    Rabow, Michael W.; Goodman, Steffanie; Chang, Susan; Berger, Mitchel; Folkman, Susan

    2010-01-01

    Filming the Family: A Documentary Film to Educate Cliniciansthe educational value of a documentary film about familyWe developed a documentary film detailing the experiences of

  15. Carbon nanotubes grown on bulk materials and methods for fabrication

    SciTech Connect (OSTI)

    Menchhofer, Paul A.; Montgomery, Frederick C.; Baker, Frederick S.

    2011-11-08

    Disclosed are structures formed as bulk support media having carbon nanotubes formed therewith. The bulk support media may comprise fibers or particles and the fibers or particles may be formed from such materials as quartz, carbon, or activated carbon. Metal catalyst species are formed adjacent the surfaces of the bulk support material, and carbon nanotubes are grown adjacent the surfaces of the metal catalyst species. Methods employ metal salt solutions that may comprise iron salts such as iron chloride, aluminum salts such as aluminum chloride, or nickel salts such as nickel chloride. Carbon nanotubes may be separated from the carbon-based bulk support media and the metal catalyst species by using concentrated acids to oxidize the carbon-based bulk support media and the metal catalyst species.

  16. PRESENTED BY THE DEPARTMENT OF FILMPRESENTED BY THE DEPARTMENT OF FILM The UNLV Short Film ArchiveThe UNLV Short Film Archive

    E-Print Network [OSTI]

    Walker, Lawrence R.

    PRESENTED BY THE DEPARTMENT OF FILMPRESENTED BY THE DEPARTMENT OF FILM The UNLV Short Film ArchiveThe UNLV Short Film Archive 48-HOUR SHORT FILM contest48-HOUR SHORT FILM contest The UNLV Short Film Archive and the Film Dept. are sponsoring the Third Annual 48-HOUR SHORT FILM CONTEST in Las Vegas, Nevada

  17. FILM STUDIES SCHOOL OF PHILOSOPHICAL, ANTHROPOLOGICAL AND

    E-Print Network [OSTI]

    Brierley, Andrew

    FILM STUDIES SCHOOL OF PHILOSOPHICAL, ANTHROPOLOGICAL AND FILM STUDIES FILM STUDIES HANDBOOK FOR UNDERGRADUATE STUDENTS 2014/2015 #12;2 2014/15 Welcome We are delighted to welcome you to the Department of Film Studies, a thriving department in the School of Philosophical, Anthropological and Film Studies

  18. Thin film composite electrolyte

    DOE Patents [OSTI]

    Schucker, Robert C. (The Woodlands, TX)

    2007-08-14

    The invention is a thin film composite solid (and a means for making such) suitable for use as an electrolyte, having a first layer of a dense, non-porous conductive material; a second layer of a porous ionic conductive material; and a third layer of a dense non-porous conductive material, wherein the second layer has a Coefficient of thermal expansion within 5% of the coefficient of thermal expansion of the first and third layers.

  19. Relationship between the structure and electrical characteristics of diamond-like carbon films

    SciTech Connect (OSTI)

    Takabayashi, Susumu Otsuji, Taiichi; Yang, Meng; Ogawa, Shuichi; Hayashi, Hiroyuki; Ješko, Radek; Takakuwa, Yuji

    2014-09-07

    To elucidate the relationship between the structure and the electrical characteristics of diamond-like carbon (DLC) films, DLC films were synthesized in a well-controlled glow discharge with the aid of photoelectrons in an argon/methane atmosphere. The dielectric constant and breakdown strength of the films exhibited opposite behaviors, depending on the total pressure during the synthesis. The product of these two values decreased monotonically as the pressure increased. The Raman spectra were analyzed with a Voigt-type formula. Based on the results, the authors propose the “sp{sup 2} cluster model” for the DLC structure. This model consists of conductive clusters of sp{sup 2} carbons surrounded by a dielectric matrix sea of sp{sup 2} carbon, sp{sup 3} carbon, and hydrogen, and indicates that the dielectric constant of the whole DLC film is determined by the balance between the dielectric constant of the matrix and the total size of the clusters, while the breakdown strength is determined by the reciprocal of the cluster size. The model suggests that a high-? DLC film can be synthesized at a middle pressure and consists of well-grown sp{sup 2} clusters and a dense matrix. A low-? DLC film can be synthesized both at low and high pressures. The sp{sup 2} cluster model explains that a low-? DLC film synthesized at low pressure consists of a dense matrix and a low density of sp{sup 2} clusters, and exhibits a high breakdown strength. On the other hand, a low-? film synthesized at high pressure consists of a coarse matrix and a high density of clusters and exhibits a low breakdown strength.

  20. Characterization of nanocrystalline ZnO:Al films by sol-gel spin coating method

    SciTech Connect (OSTI)

    Gareso, P. L. Rauf, N. Juarlin, E.; Sugianto,; Maddu, A.

    2014-09-25

    Nanocrystalline ZnO films doped with aluminium by sol-gel spin coating method have been investigated using optical transmittance UV-Vis and X-ray diffraction (X-RD) measurements. ZnO films were prepared using zinc acetate dehydrate (Zn(CH{sub 3}COO){sub 2}@@‡2H{sub 2}O), ethanol, and diethanolamine (DEA) as a starting material, solvent, and stabilizer, respectively. For doped films, AlCl{sub 3} was added to the mixture. The ZnO:Al films were deposited on a transparent conductive oxide (TCO) substrate using spin coating technique at room temperature with a rate of 3000 rpm in 30 sec. The deposited films were annealed at various temperatures from 400°C to 600°C during 60 minutes. The transmittance UV-Vis measurement results showed that after annealing at 400°C, the energy band gap profile of nanocrystalline ZnO:Al film was a blue shift. This indicated that the band gap of ZnO:Al increased after annealing due to the increase of crystalline size. As the annealing temperature increased the bandgap energy was a constant. In addition to this, there was a small oscillation occurring after annealing compared to the as–grown samples. In the case of X-RD measurements, the crystalinity of the films were amorphous before annealing, and after annealing the crystalinity became enhance. Also, X-RD results showed that structure of nanocrystalline ZnO:Al films were hexagonal polycrystalline with lattice parameters are a = 3.290 Å and c = 5.2531 Å.

  1. Evidence that an internal carbonic anhydrase is present in 5% CO/sub 2/-grown and air-grown Chlamydomonas. [Chlamydomonas reinhardtii

    SciTech Connect (OSTI)

    Moroney, J.V.; Togasaki, R.K.; Husic, H.D.; Tolbert, N.E.

    1987-07-01

    Inorganic carbon (C/sub i/) uptake was measured in wild-type cells of Chlamydomonas reinhardtii, and in cia-3, a mutant strain of C. reinhardtii that cannot grow with air levels of CO/sub 2/. Both air-grown cells, that have a CO/sub 2/ concentrating system, and 5% CO/sub 2/-grown cells that do not have this system, were used. When the external pH was 5.1 or 7.3, air-grown, wild-type cells accumulated inorganic carbon (C/sub i/) and this accumulation was enhanced when the permeant carbonic anhydrase inhibitor, ethoxyzolamide, was added. When the external pH was 5.1, 5% CO/sub 2/-grown cells also accumulated some C/sub i/, although not as much as air-grown cells and this accumulation was stimulated by the addition of ethoxyzolamide. At the same time, ethoxyzolamide inhibited CO/sub 2/ fixation by high CO/sub 2/-grown, wild-type cells at both pH 5.1 and 7.3. These observations imply that 5% CO/sub 2/-grown, wild-type cells, have a physiologically important internal carbonic anhydrase, although the major carbonic anhydrase located in the periplasmic space is only present in air-grown cells. Inorganic carbon uptake by cia-3 cells supported this conclusion. This mutant strain, which is thought to lack an internal carbonic anhydrase, was unaffected by ethoxyzolamide at pH 5.1. Other physiological characteristics of cia-3 resemble those of wild-type cells that have been treated with ethoxyzolamide. It is concluded that an internal carbonic anhydrase is under different regulatory control than the periplasmic carbonic anhydrase.

  2. Nanoscale Phase Separation In Epitaxial Cr-Mo and Cr-V Alloy Thin Films Studied Using Atom Probe Tomography: Comparison Of Experiments And Simulation

    SciTech Connect (OSTI)

    Devaraj, Arun; Kaspar, Tiffany C.; Ramanan, Sathvik; Walvekar, Sarita K.; Bowden, Mark E.; Shutthanandan, V.; Kurtz, Richard J.

    2014-11-21

    Tailored metal alloy thin film-oxide interfaces generated using molecular beam epitaxial (MBE) deposition of alloy thin films on a single crystalline oxide substrate can be used for detailed studies of irradiation damage response on the interface structure. However presence of nanoscale phase separation in the MBE grown alloy thin films can impact the metal-oxide interface structure. Due to nanoscale domain size of such phase separation it is very challenging to characterize by conventional techniques. Therefor laser assisted atom probe tomography (APT) was utilized to study the phase separation in epitaxial Cr0.61Mo0.39, Cr0.77Mo0.23, and Cr0.32V0.68 alloy thin films grown by MBE on MgO(001) single crystal substrates. Statistical analysis, namely frequency distribution analysis and Pearson coefficient analysis of experimental data was compared with similar analyses conducted on simulated APT datasets with known extent of phase separation. Thus the presence of phase separation in Cr-Mo films, even when phase separation was not clearly observed by x-ray diffraction, and the absence of phase separation in the Cr-V film were thus confirmed.

  3. Nanoscale phase separation in epitaxial Cr-Mo and Cr-V alloy thin films studied using atom probe tomography: Comparison of experiments and simulation

    SciTech Connect (OSTI)

    Devaraj, A.; Ramanan, S.; Walvekar, S.; Bowden, M. E.; Shutthanandan, V.; Kaspar, T. C.; Kurtz, R. J.

    2014-11-21

    Tailored metal alloy thin film-oxide interfaces generated using molecular beam epitaxy (MBE) deposition of alloy thin films on a single crystalline oxide substrate can be used for detailed studies of irradiation damage response on the interface structure. However, the presence of nanoscale phase separation in the MBE grown alloy thin films can impact the metal-oxide interface structure. Due to nanoscale domain size of such phase separation, it is very challenging to characterize by conventional techniques. Therefore, laser assisted atom probe tomography (APT) was utilized to study the phase separation in epitaxial Cr{sub 0.61}Mo{sub 0.39}, Cr{sub 0.77}Mo{sub 0.23}, and Cr{sub 0.32}V{sub 0.68} alloy thin films grown by MBE on MgO(001) single crystal substrates. Statistical analysis, namely frequency distribution analysis and Pearson coefficient analysis of experimental data was compared with similar analyses conducted on simulated APT datasets with known extent of phase separation. Thus, the presence of phase separation in Cr-Mo films, even when phase separation was not clearly observed by x-ray diffraction, and the absence of phase separation in the Cr-V film were confirmed.

  4. Low-temperature CVD of iron, cobalt, and nickel nitride thin films from bis[di(tert-butyl)amido]metal(II) precursors and ammonia

    SciTech Connect (OSTI)

    Cloud, Andrew N.; Abelson, John R., E-mail: abelson@illinois.edu [Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 201 Materials Science and Engineering Building, 1304 W. Green St., Urbana, Illinois 61801 (United States); Davis, Luke M.; Girolami, Gregory S., E-mail: girolami@scs.illinois.edu [School of Chemical Sciences, University of Illinois at Urbana-Champaign, 600 S. Mathews Ave., Urbana, Illinois 61801 (United States)

    2014-03-15

    Thin films of late transition metal nitrides (where the metal is iron, cobalt, or nickel) are grown by low-pressure metalorganic chemical vapor deposition from bis[di(tert-butyl)amido]metal(II) precursors and ammonia. These metal nitrides are known to have useful mechanical and magnetic properties, but there are few thin film growth techniques to produce them based on a single precursor family. The authors report the deposition of metal nitride thin films below 300?°C from three recently synthesized M[N(t-Bu){sub 2}]{sub 2} precursors, where M?=?Fe, Co, and Ni, with growth onset as low as room temperature. Metal-rich phases are obtained with constant nitrogen content from growth onset to 200?°C over a range of feedstock partial pressures. Carbon contamination in the films is minimal for iron and cobalt nitride, but similar to the nitrogen concentration for nickel nitride. X-ray photoelectron spectroscopy indicates that the incorporated nitrogen is present as metal nitride, even for films grown at the reaction onset temperature. Deposition rates of up to 18?nm/min are observed. The film morphologies, growth rates, and compositions are consistent with a gas-phase transamination reaction that produces precursor species with high sticking coefficients and low surface mobilities.

  5. Total current collapse in High-Voltage GaN MIS-HEMTs induced by Zener trapping D. Jin, J. Joh*, S. Krishnan*, N. Tipirneni*, S. Pendharkar* and J. A. del Alamo

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    observed after OFF-state stress at high voltage. We attribute this to high-field tunneling-induced electron/detrapping dynamics have been extracted. All of our experimental results are consistent with electron trapping insideTotal current collapse in High-Voltage GaN MIS-HEMTs induced by Zener trapping D. Jin, J. Joh*, S

  6. Structural and optical studies of chemically deposited Sn{sub 2}S{sub 3} thin films

    SciTech Connect (OSTI)

    Güneri, Emine; Göde, Fatma; Boyarbay, Behiye; Gümü?, Cebrail

    2012-11-15

    Highlights: ? Sn{sub 2}S{sub 3} films were deposited at 30 °C by chemical bath deposition. ? The deposition time of the chemical bath was adjusted to 20 h, 22 h, and 24 h. ? Effect of deposition time on structural and optical properties of Sn{sub 2}S{sub 3} thin films were investigated. ? The presence of characteristic bonds of Sn{sub 2}S{sub 3} was observed from Raman shift experiment. ? The direct band gap of thin films constant were calculated. -- Abstract: Sn{sub 2}S{sub 3} thin films were grown on commercial glass substrates by chemical bath deposition at room temperature. The structural and optical properties of Sn{sub 2}S{sub 3} thin films were studied as a function of deposition time. The thin films were characterized by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and UV–vis spectroscopy. The XRD pattern showed that the Sn{sub 2}S{sub 3} thin films had an orthorhombic polycrystalline structure. The lattice constants of the thin films were a = 8.741 ?, b = 14.034 ? and c = 3.728 ?. The characteristic bonds of Sn{sub 2}S{sub 3} were observed at 66.3, 111.7, 224.7 and 308.9 cm{sup ?1} using Raman shift experiment. The optical energy band gap of the thin films decreased from 2.12 eV to 2.03 eV with increasing deposition time from 20 to 24 h. The optical constants of the thin films were obtained using the experimentally recorded transmission data as a function of the wavelength.

  7. Domain matched epitaxial growth of (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on (0001) Al{sub 2}O{sub 3} with ZnO buffer layer

    SciTech Connect (OSTI)

    Krishnaprasad, P. S. E-mail: mkj@cusat.ac.in; Jayaraj, M. K. E-mail: mkj@cusat.ac.in; Antony, Aldrin; Rojas, Fredy

    2015-03-28

    Epitaxial (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown by pulsed laser deposition on (0001) Al{sub 2}O{sub 3} substrate with ZnO as buffer layer. The x-ray ?-2?, ?-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BST thin films show significantly improved tunable performance over polycrystalline thin films.

  8. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  9. Identification of optimum potassium nutrition of greenhouse plants grown in recirculating subirrigation 

    E-Print Network [OSTI]

    Blessington, Trisha R.

    2002-01-01

    of this research was to determine the optimum potassium nutrition of greenhouse plants grown in recirculating subirrigation. New Guinea impatiens 'Ovation Salmon Pink Swirl' were grown in recirculating subirrigation trays using 0 -12 mM K, with constant 1.5 mM P...

  10. 934 / JOURNAL OF ENVIRONMENTAL ENGINEERING / OCTOBER 2000 CHLORINATED SOLVENT COMETABOLISM BY BUTANE-GROWN

    E-Print Network [OSTI]

    Semprini, Lewis

    BY BUTANE-GROWN MIXED CULTURE By Young Kim,1 Daniel J. Arp,2 and Lewis Semprini3 ABSTRACT: A survey of aerobic cometabolism of chlorinated aliphatic hydrocarbons by a butane-grown mixed culture was performed and was inhibited by butane and inactivated by acetylene, indicating that a monooxygenase enzyme was likely involved

  11. Optical characterization of InN layers grown by high-pressure chemical vapor deposition

    E-Print Network [OSTI]

    Dietz, Nikolaus

    Optical characterization of InN layers grown by high-pressure chemical vapor deposition M. Alevli properties of InN layers grown by high-pressure chemical vapor deposition have been studied. Raman, infrared at elevated temperatures, a high-pressure chemical vapor deposition HPCVD system has been established at GSU.6

  12. Structures and defects of WO3x nanorods grown by in-situ heating tungsten filament

    E-Print Network [OSTI]

    Gao, Hongjun

    Structures and defects of WO3Àx nanorods grown by in-situ heating tungsten filament Huairuo Zhang a nanorods were grown on the tips of electrochemical etched W filaments by in-situ heating under different work, we prepare tungsten oxide nanorods by heating the electrochemical etched W filaments under

  13. Structural Properties of Opals Grown with Vertical Controlled Drying Alex Hartsuiker*, and Willem L. Vos,

    E-Print Network [OSTI]

    Vos, Willem L.

    Structural Properties of Opals Grown with Vertical Controlled Drying Alex Hartsuiker*, and Willem L ReceiVed January 15, 2008 We have grown thin opals of self-assembled silica colloids by the well. These self-assembled photonic crystals, also called artificial opals, have attracted much attention over

  14. Biomass, Flavonol Levels and Sensory Characteristics of Allium cultivars Grown Hydroponically at Ambient and

    E-Print Network [OSTI]

    Paré, Paul W.

    04ICES-136 Biomass, Flavonol Levels and Sensory Characteristics of Allium cultivars Grown growth chambers to evaluate the effect of elevated CO2 (1200 ppm) versus ambient CO2 (400 ppm) on biomass planting (dap). Regardless of cultivar or dap, plants grown at elevated CO2 had greater biomass

  15. Polyaniline Nanothin Film Chemiresistive Gas Sensors

    E-Print Network [OSTI]

    Srinives, Sira

    2012-01-01

    and thickness of NiO thin films on formaldehyde detection.Thin Solid Films. 2010, 520(3): p. 947-952. Lexi, Z. , etet al. , Carbon nanotube films as a platform to transduce

  16. Growth dynamics of pentacene thin films: Real-time synchrotron x-ray scattering study

    SciTech Connect (OSTI)

    Mayer, Alex C.; Ruiz, Ricardo; Malliaras, George G. [Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States); Zhou, Hua; Headrick, Randall L. [Department of Physics, University of Vermont, Burlington, Vermont 05405 (United States); Kazimirov, Alexander [Cornell High Energy Synchrotron Source, Ithaca, New York 14853 (United States)

    2006-05-15

    Real-time synchrotron x-ray scattering in the anti-Bragg configuration was used to monitor the dynamics of pentacene film growth on inert substrates. A distributed-growth model, according to which pentacene molecules adsorbed on the nth layer can either nucleate and contribute to the growth of the (n+1)th layer or transfer downward and contribute to the growth of the nth layer, gave a good description of the data. For molecules adsorbed on the first and second layers, the probability of downward transfer was found to be dependent on the substrate, and independent of temperature within the range from 25 to 60 deg. C. For films grown on SiO{sub 2}, an Ehrlich-Schwoebel barrier of the order of 70 meV dominated downward transfer of pentacene molecules in layers away from the substrate. For films grown on an alkylated self-assembled monolayer, significant desorption of pentacene molecules from the substrate at elevated temperatures forced the growth mode toward the three-dimensional limit.

  17. Study of narrowband single photon emitters in polycrystalline diamond films

    SciTech Connect (OSTI)

    Sandstrom, Russell G.; Shimoni, Olga; Martin, Aiden A.; Aharonovich, Igor, E-mail: igor.aharonovich@uts.edu.au [School of Physics and Advanced Materials, University of Technology, Sydney, P.O. Box 123, Broadway, New South Wales 2007 (Australia)

    2014-11-03

    Quantum information processing and integrated nanophotonics require robust generation of single photon emitters on demand. In this work, we demonstrate that diamond films grown on a silicon substrate by microwave plasma chemical vapor deposition can host bright, narrowband single photon emitters in the visible—near infra-red spectral range. The emitters possess fast lifetime (?several ns), absolute photostability, and exhibit full polarization at excitation and emission. Pulsed and continuous laser excitations confirm their quantum behaviour at room temperature, while low temperature spectroscopy is performed to investigate inhomogeneous broadening. Our results advance the knowledge of solid state single photon sources and open pathways for their practical implementation in quantum communication and quantum information processing.

  18. Origin of superstructures in (double) perovskite thin films

    SciTech Connect (OSTI)

    Shabadi, V. Major, M.; Komissinskiy, P.; Vafaee, M.; Radetinac, A.; Baghaie Yazdi, M.; Donner, W.; Alff, L.

    2014-09-21

    We have investigated the origin of superstructure peaks as observed by X-ray diffraction of multiferroic Bi(Fe{sub 0.5}Cr{sub 0.5})O{sub 3} thin films grown by pulsed laser deposition on single crystal SrTiO{sub 3} substrates. The photon energy dependence of the contrast between the atomic scattering factors of Fe and Cr is used to rule out a chemically ordered double perovskite Bi{sub 2}FeCrO{sub 6} (BFCO). Structural calculations suggest that the experimentally observed superstructure occurs due to unequal cation displacements along the pseudo-cubic [111] direction that mimic the unit cell of the chemically ordered compound. This result helps to clarify discrepancies in the correlations of structural and magnetic order reported for Bi{sub 2}FeCrO{sub 6}. The observation of a superstructure in itself is not a sufficient proof of chemical order in double perovskites.

  19. Vapor-deposited porous films for energy conversion

    DOE Patents [OSTI]

    Jankowski, Alan F.; Hayes, Jeffrey P.; Morse, Jeffrey D.

    2005-07-05

    Metallic films are grown with a "spongelike" morphology in the as-deposited condition using planar magnetron sputtering. The morphology of the deposit is characterized by metallic continuity in three dimensions with continuous and open porosity on the submicron scale. The stabilization of the spongelike morphology is found over a limited range of the sputter deposition parameters, that is, of working gas pressure and substrate temperature. This spongelike morphology is an extension of the features as generally represented in the classic zone models of growth for physical vapor deposits. Nickel coatings were deposited with working gas pressures up 4 Pa and for substrate temperatures up to 1000 K. The morphology of the deposits is examined in plan and in cross section views with scanning electron microscopy (SEM). The parametric range of gas pressure and substrate temperature (relative to absolute melt point) under which the spongelike metal deposits are produced appear universal for other metals including gold, silver, and aluminum.

  20. Epitaxial thin film growth of LiH using a liquid-Li atomic template

    SciTech Connect (OSTI)

    Oguchi, Hiroyuki; Ikeshoji, Tamio; Orimo, Shin-ichi; Ohsawa, Takeo; Shiraki, Susumu; Hitosugi, Taro; Kuwano, Hiroki

    2014-11-24

    We report on the synthesis of lithium hydride (LiH) epitaxial thin films through the hydrogenation of a Li melt, forming abrupt LiH/MgO interface. Experimental and first-principles molecular dynamics studies reveal a comprehensive microscopic picture of the crystallization processes, which sheds light on the fundamental atomistic growth processes that have remained unknown in the vapor-liquid-solid method. We found that the periodic structure that formed, because of the liquid-Li atoms at the film/MgO-substrate interface, serves as an atomic template for the epitaxial growth of LiH crystals. In contrast, films grown on the Al{sub 2}O{sub 3} substrates indicated polycrystalline films with a LiAlO{sub 2} secondary phase. These results and the proposed growth process provide insights into the preparation of other alkaline metal hydride thin films on oxides. Further, our investigations open the way to explore fundamental physics and chemistry of metal hydrides including possible phenomena that emerge at the heterointerfaces of metal hydrides.

  1. Femtosecond laser ablation-based mass spectrometry. An ideal tool for stoichiometric analysis of thin films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    LaHaye, Nicole L.; Kurian, Jose; Diwakar, Prasoon K.; Alff, Lambert; Harilal, Sivanandan S.

    2015-08-19

    An accurate and routinely available method for stoichiometric analysis of thin films is a desideratum of modern materials science where a material’s properties depend sensitively on elemental composition. We thoroughly investigated femtosecond laser ablation-inductively coupled plasma-mass spectrometry (fs-LA-ICP-MS) as an analytical technique for determination of the stoichiometry of thin films down to the nanometer scale. The use of femtosecond laser ablation allows for precise removal of material with high spatial and depth resolution that can be coupled to an ICP-MS to obtain elemental and isotopic information. We used molecular beam epitaxy-grown thin films of LaPd(x)Sb2 and T´-La2CuO4 to demonstrate themore »capacity of fs-LA-ICP-MS for stoichiometric analysis and the spatial and depth resolution of the technique. Here we demonstrate that the stoichiometric information of thin films with a thickness of ~10 nm or lower can be determined. Furthermore, our results indicate that fs-LA-ICP-MS provides precise information on the thin film-substrate interface and is able to detect the interdiffusion of cations.« less

  2. Epitaxial growth of highly conductive RuO{sub 2} thin films on (100) Si

    SciTech Connect (OSTI)

    Jia, Q.X.; Song, S.G.; Wu, X.D.; Cho, J.H.; Foltyn, S.R.; Findikoglu, A.T.; Smith, J.L.

    1996-02-01

    Conductive RuO{sub 2} thin films have been heteroepitaxially grown by pulsed laser deposition on Si substrates with yttria-stabilized zirconia (YSZ) buffer layers. The RuO{sub 2} thin films deposited under optimized processing conditions are {ital a}-axis oriented normal to the Si substrate surface with a high degree of in-plane alignment with the major axes of the (100) Si substrate. Cross-sectional transmission electron microscopy analysis on the RuO{sub 2}/YSZ/Si multilayer shows an atomically sharp interface between the RuO{sub 2} and the YSZ. Electrical measurements show that the crystalline RuO{sub 2} thin films are metallic over a temperature range from 4.2 to 300 K and are highly conductive with a room-temperature resistivity of 37{plus_minus}2 {mu}{Omega}cm. The residual resistance ratio ({ital R}{sub 300K}/{ital R}{sub 4.2K}) above 5 for our RuO{sub 2} thin films is the highest ever reported for such films on Si substrates. {copyright} {ital 1996 American Institute of Physics.}

  3. Self-annihilation of inversion domains by high energy defects in III-Nitrides

    SciTech Connect (OSTI)

    Koukoula, T.; Kioseoglou, J. Kehagias, Th.; Komninou, Ph.; Ajagunna, A. O.; Georgakilas, A.

    2014-04-07

    Low-defect density InN films were grown on Si(111) by molecular beam epitaxy over an ?1??m thick GaN/AlN buffer/nucleation layer. Electron microscopy observations revealed the presence of inverse polarity domains propagating across the GaN layer and terminating at the sharp GaN/InN (0001{sup ¯}) interface, whereas no inversion domains were detected in InN. The systematic annihilation of GaN inversion domains at the GaN/InN interface is explained in terms of indium incorporation on the Ga-terminated inversion domains forming a metal bonded In-Ga bilayer, a structural instability known as the basal inversion domain boundary, during the initial stages of InN growth on GaN.

  4. APIVT-Grown Silicon Thin Layers and PV Devices: Preprint

    SciTech Connect (OSTI)

    Wang, T. H.; Ciszek, T. F.; Page, M. R.; Bauer, R. E.; Wang, Q.; Landry, M. D.

    2002-05-01

    Large-grained (5-20 ..mu..m) polycrystalline silicon layers have been grown at intermediate temperatures of 750-950C directly on foreign substrates without a seeding layer by iodine vapor transport at atmospheric pressure with rates as high as 3 mm/min. A model is constructed to explain the atypical temperature dependence of growth rate. We have also used this technique to grow high-quality epitaxial layers on heavily doped CZ-Si and on upgraded MG-Si substrates. Possible solar cell structures of thin-layer polycrystalline silicon on foreign substrates with light trapping have been examined, compared, and optimized by two-dimensional device simulations. The effects of grain boundary re-combination on device performance are presented for two grain sizes of 2 and 20 mm. We found that 104 cm/s recombination velocity is adequate for 20-m m grain-sized thin silicon, whereas a very low recombination velocity of 103 cm/s must be accomplished in order to achieve reasonable performance for a 2- mm grain-sized polycrystalline silicon device.

  5. Diamond films treated with alkali-halides

    DOE Patents [OSTI]

    Anderson, D.F.; Kwan, S.W.

    1997-04-08

    A secondary electron emitter is provided and includes a substrate with a diamond film, the diamond film is treated or coated with an alkali-halide. 5 figs.

  6. Electrical initiation of an energetic nanolaminate film

    DOE Patents [OSTI]

    Tringe, Joseph W. (Walnut Creek, CA); Gash, Alexander E. (Brentwood, CA); Barbee, Jr., Troy W. (Palo Alto, CA)

    2010-03-30

    A heating apparatus comprising an energetic nanolaminate film that produces heat when initiated, a power source that provides an electric current, and a control that initiates the energetic nanolaminate film by directing the electric current to the energetic nanolaminate film and joule heating the energetic nanolaminate film to an initiation temperature. Also a method of heating comprising providing an energetic nanolaminate film that produces heat when initiated, and initiating the energetic nanolaminate film by directing an electric current to the energetic nanolaminate film and joule heating the energetic nanolaminate film to an initiation temperature.

  7. Strictly Bollywood? : story, camera and movement in Hindi film dance

    E-Print Network [OSTI]

    Shresthova, Sangita.

    2003-01-01

    Film dances, or filmed dance sequences accompanying film songs, are an important part of popular Indian cinema. Over the years, Hindi film dance has evolved from a cinematically simplistic, filmed documentation of performance ...

  8. Creating CZTS Thin Films Via Stacked Metallic CVD and Sulfurization

    E-Print Network [OSTI]

    Bielecki, Anthony

    2013-01-01

    Katagiri, Cu2ZnSnS4 thin film solar cells, Thin Solid FilmsIndium Galenide Films Thin-film solar cells are created bycandidate for thin- film solar cells. CIGS solar cell

  9. Thin film hydrogen sensor

    DOE Patents [OSTI]

    Lauf, Robert J. (Oak Ridge, TN); Hoffheins, Barbara S. (Knoxville, TN); Fleming, Pamela H. (Oak Ridge, TN)

    1994-01-01

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed.

  10. Carbonaceous film coating

    DOE Patents [OSTI]

    Maya, L.

    1988-04-27

    A method of making a carbonaceous film comprising heating tris(1,3,2-benzodiazaborolo)borazine or dodecahydro tris(1,3,2)diazaborine(1,2-a:1'2'-c:1''2''-e)borazine in an inert atmosphere in the presence of a substrate to a temperature at which the borazine compound decomposes, and the decomposition products deposit onto the substrate to form a thin, tenacious, highly reflective conductive coating having a narrow band gap which is susceptible of modification and a relatively low coefficient of friction.

  11. Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy

    SciTech Connect (OSTI)

    Hosseini Vajargah, S.; Woo, S. Y.; Botton, G. A.; Ghanad-Tavakoli, S.; Kleiman, R. N.; Preston, J. S.

    2012-11-01

    The atomic-resolved reversal of the polarity across an antiphase boundary (APB) was observed in GaSb films grown on Si by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The investigation of the interface structure at the origin of the APB reveals that coalescence of two domains with Ga-prelayer and Sb-prelayer causes the sublattice reversal. The local strain and lattice rotation distributions of the APB, attributed to the discordant bonding length at the APB with the surrounding GaSb lattice, were further studied using the geometric phase analysis technique. The crystallographic characteristics of the APBs and their interaction with other planar defects were observed with HAADF-STEM. The quantitative agreement between experimental and simulated images confirms the observed polarities in the acquired HAADF-STEM data. The self-annihilation mechanism of the APBs is addressed based on the rotation induced by anti-site bonds and APBs' faceting.

  12. Thin film ion conducting coating

    DOE Patents [OSTI]

    Goldner, Ronald B. (Lexington, MA); Haas, Terry (Sudbury, MA); Wong, Kwok-Keung (Watertown, MA); Seward, George (Arlington, MA)

    1989-01-01

    Durable thin film ion conducting coatings are formed on a transparent glass substrate by the controlled deposition of the mixed oxides of lithium:tantalum or lithium:niobium. The coatings provide durable ion transport sources for thin film solid state storage batteries and electrochromic energy conservation devices.

  13. System for measuring film thickness

    DOE Patents [OSTI]

    Batishko, Charles R. (West Richland, WA); Kirihara, Leslie J. (Richland, WA); Peters, Timothy J. (Richland, WA); Rasmussen, Donald E. (Richland, WA)

    1990-01-01

    A system for determining the thicknesses of thin films of materials exhibiting fluorescence in response to exposure to excitation energy from a suitable source of such energy. A section of film is illuminated with a fixed level of excitation energy from a source such as an argon ion laser emitting blue-green light. The amount of fluorescent light produced by the film over a limited area within the section so illuminated is then measured using a detector such as a photomultiplier tube. Since the amount of fluorescent light produced is a function of the thicknesses of thin films, the thickness of a specific film can be determined by comparing the intensity of fluorescent light produced by this film with the intensity of light produced by similar films of known thicknesses in response to the same amount of excitation energy. The preferred embodiment of the invention uses fiber optic probes in measuring the thicknesses of oil films on the operational components of machinery which are ordinarily obscured from view.

  14. Liquid-film electron stripper

    DOE Patents [OSTI]

    Gavin, Basil F. (Albion, CA)

    1986-01-01

    An improved liquid-film electron stripper particularly for high intensity heavy ion beams which produces constant regenerated, stable, free-standing liquid films having an adjustable thickness between 0.3 to 0.05 microns. The improved electron stripper is basically composed of at least one high speed, rotating disc with a very sharp, precision-like, ground edge on one said of the disc's periphery and with a highly polished, flat, radial surface adjacent the sharp edge. A fine stream of liquid, such as oil, impinges at a 90.degree. angle adjacent the disc's sharp outer edge. Film terminators, located at a selected distance from the disc perimeter are positioned approximately perpendicular to the film. The terminators support, shape, and stretch the film and are arranged to assist in the prevention of liquid droplet formation by directing the collected film to a reservoir below without breaking or interfering with the film. One embodiment utilizes two rotating discs and associated terminators, with the discs rotating so as to form films in opposite directions, and with the second disc being located down beam-line relative to the first disc.

  15. High-efficiency, thin-film solar cells. Annual subcontractor report, 1 July 1991--30 June 1992

    SciTech Connect (OSTI)

    Gale, R.P.

    1994-01-01

    This report describes work on a 3-year research program to investigate thin-film GaAs/GaInP cells using the cleavage of lateral epitaxial film for transfer (CLEFT) technique, and to determine the process to enable overgrowth of GaAs films using organometallic chemistry. Application of the CLEFT thin-film technique to GaInP/GaAs solar cells and organometallic overgrowth was investigated. A problem of alloy contamination was identified and controlled, leading to higher quality layers. Solar cell structures were grown and fabricated using previously determined growth parameters for GaAs and GaInP. With the improved materials developed significant improvements were made in solar cell performance. Conditions for in-situ overgrowth by organometallic chemical vapor deposition (OMCVD) were determined and continuous GaAs layers were grown over a separation mask layer. The layers were successfully separated from their substrate using the CLEFT process, demonstrating the application of overgrowth using OM chemistry with HCl.

  16. Anode film formation and control

    DOE Patents [OSTI]

    Koski, O.; Marschman, S.C.

    1990-05-01

    A protective film is created about the anode within a cryolite-based electrolyte during electrolytic production of aluminum from alumina. The film functions to minimize corrosion of the anode by the cryolitic electrolyte and thereby extend the life of the anode. Various operating parameters of the electrolytic process are controlled to maintain the protective film about the anode in a protective state throughout the electrolytic reduction of alumina. Such parameters include electrolyte temperature, electrolyte ratio, current density, and Al[sub 2]O[sub 3] concentration. An apparatus is also disclosed to enable identification of the onset of anode corrosion due to disruption of the film to provide real time information regarding the state of the film. 3 figs.

  17. Shielding superconductors with thin films

    E-Print Network [OSTI]

    Posen, Sam; Catelani, Gianluigi; Liepe, Matthias U; Sethna, James P

    2015-01-01

    Determining the optimal arrangement of superconducting layers to withstand large amplitude AC magnetic fields is important for certain applications such as superconducting radiofrequency cavities. In this paper, we evaluate the shielding potential of the superconducting film/insulating film/superconductor (SIS') structure, a configuration that could provide benefits in screening large AC magnetic fields. After establishing that for high frequency magnetic fields, flux penetration must be avoided, the superheating field of the structure is calculated in the London limit both numerically and, for thin films, analytically. For intermediate film thicknesses and realistic material parameters we also solve numerically the Ginzburg-Landau equations. It is shown that a small enhancement of the superheating field is possible, on the order of a few percent, for the SIS' structure relative to a bulk superconductor of the film material, if the materials and thicknesses are chosen appropriately.

  18. High-RRR thin-films of NB produced using energetic condensation from a coaxial, rotating vacuum ARC plasma (CEDTM)

    SciTech Connect (OSTI)

    Enrique Francisco Valderrama, Colt James, Mahadevan Krishnan, Xin Zhao, Larry Phillips, Charles Reece, Kang Seo

    2012-07-01

    We have recently demonstrated unprecedentedly high values of RRR (up to 542) in thin-films of pure Nb deposited on a-plane sapphire and MgO crystal substrates. The Nb films were grown using a vacuum arc discharge struck between a reactor grade Nb cathode rod (RRR {approx} 30) and a coaxial, semi-transparent Mo mesh anode, with a heated substrate placed just outside it. The substrates were pre-heated for several hours prior to deposition at different temperatures. Low pre-heat temperatures (<300 C) and deposition temperatures (<300 C) give low RRR (<50) films, whereas higher pre-heat (700 C) and coating temperatures (500 C) give RRR=214 on a-sapphire and RRR=542 on MgO. XRD (Bragg-Brentano scans and Pole Figures), EBSD and SIMS data reveal several features: (1) on asapphire, higher temperatures show better 3D registry for epitaxial growth of Nb; the crystal structure evolves from textured, polycrystalline (with twins) to single-crystal; (2) on MgO, there is a transition from {l_brace}110{r_brace} planes to {l_brace}100{r_brace} as the temperature is increased beyond 500 C. The dramatic increase in RRR (from {approx}10 at <300 C to {approx}500 at >600 C) is correlated with better epitaxial crystal structure in both a-sapphire and MgO substrate grown films. However, the SIMS data reveal that the most important requirement for high-RRR Nb films on either substrate is the reduction of impurities in the film, especially hydrogen. The hydrogen content in the MgO grown films is 1000 times lower than in bulk Nb tested as a reference from SRF cavity grade Nb. This result has potential implications for SRF accelerators. Coating bulk Nb cavities with an MgO layer followed by our CEDTM deposited Nb films, might create superior SRF cavities that would avoid Q-slope and operate at higher peak fields.

  19. GaInNAs Structures Grown by MBE for High-Efficiency Solar Cells: Final Report; 25 June 1999--24 August 2002

    SciTech Connect (OSTI)

    Tu, C. W.

    2003-08-01

    The focus of this work is to improve the quality of GaInNAs by advanced thin-film growth techniques, such as digital-alloy growth techniques and migration-enhanced epitaxy (MEE). The other focus is to further investigate the properties of such materials, which are potentially beneficial for high-efficiency, multijunction solar cells. 400-nm-thick strain-compensated Ga0.92In0.08As/GaN0.03As0.97 short-period superlattices (SPSLs) are grown lattice-matched to GaAs substrates. The photoluminescence (PL) intensity of digital alloys is 3 times higher than that of random alloys at room temperature, and the improvement is even greater at low temperature, by a factor of about 12. The room-temperature PL intensity of the GaInNAs quantum well grown by the strained InAs/GaN0.023As SPSL growth mode is higher by a factor 5 as compare to the continuous growth mode. The SPSL growth method allows for independent adjustment of the In-to-Ga ratio without group III competition. MEE reduces the low-energy tail of PL, and PL peaks become more intense and sharper. The twin peaks photoluminescence of GaNAs grown on GaAs was observed at room temperature. The peaks splitting increase with increase in nitrogen alloy content. The strain-induced splitting of light-hole and heavy-hole bands of tensile-strained GaNAs is proposed as an explanation of such behavior.

  20. Low-temperature growth and orientational control in RuO{sub 2} thin films by metal-organic chemical vapor deposition

    SciTech Connect (OSTI)

    Bai, G.R.; Wang, A.; Foster, C.M.; Vetrone, J.; Patel, J.; Wu, X.

    1996-08-01

    For growth temperatures in the range of 275 C to 425 C, highly conductive RuO{sub 2} thin films with either (110)- or (101)-textured orientations have been grown by metal-organic chemical vapor deposition (MOCVD) on both SiO{sub 2}/Si(001) and Pt/Ti/SiO{sub 2}/Si(001) substrates. Both the growth temperature and growth rate were used to control the type and degree of orientational texture of the RuO{sub 2} films. In the upper part of this growth temperature range ({approximately} 350 C) and at a low growth rate (< 30 {angstrom}/min.), the RuO{sub 2} films favored a (110)-textured. In contrast, at the lower part of this growth temperature range ({approximately} 300 C) and at a high growth rate (> 30 {angstrom}/min.), the RuO{sub 2} films favored a (101)-textured. In contrast, a higher growth temperatures (> 425 C) always produced randomly-oriented polycrystalline films. For either of these low-temperature growth processes, the films produced were crack-free, well-adhered to the substrates, and had smooth, specular surfaces. Atomic force microscopy showed that the films had a dense microstructure with an average grain size of 50--80 nm and a rms. surface roughness of {approximately} 3--10 nm. Four-probe electrical transport measurements showed that the films were highly conductive with resistivities of 34--40 {micro}{Omega}-cm ({at} 25 C).

  1. Surface and Interface Properties of 10–12 Unit Cells Thick Sputter Deposited Epitaxial CeO2Films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Saraf, L. V.; Wang, C. M.; Engelhard, M. H.; Nachimuthu, P.

    2008-01-01

    Ultrathin and continuous epitaxial films with relaxed lattice strain can potentially maintain more of its bulk physical and chemical properties and are useful as buffer layers. We study surface, interface, and microstructural properties of ultrathin (?10–12 unit cells thick) epitaxial ceria films grown on single crystal YSZ substrates. The out-of -plane and in-plane lattice parameters indicate relaxation in the continuous film due to misfit dislocations seen by high-resolution transmission electron microscopy (HRTEM) and substrate roughness of?1-2 unit cells, confirmed by atomic force microscopy and HRTEM. A combination of secondary sputtering, lattice mismatch, substrate roughness, and surface reduction creating secondary phasemore »was likely the cause of surface roughness which should be reduced to a minimum level for effective use of it as buffer layers.« less

  2. Thermal protection of H13 steel by growth of (TiAl)N films by PAPVD pulsed arc technique

    SciTech Connect (OSTI)

    Jimenez, H.; Devia, D.M.; Benavides, V.; Devia, A. Arango, Y.C.; Arango, P.J.; Velez, J.M.

    2008-08-15

    (TiAl)N Films were grown on H13 steel by a plasma assisted repetitive pulsed arc discharge. To grow the coatings, a TiAl sintered cathode was used, 50% Ti-50% Al. The deposition system consists of a reaction chamber with two electrodes placed face to face. A pulsed power supply, which allows for control of parameters like time active arc, time between arcs, arc energy, and others, is used to generate the discharge. Thermal changes were carried out on H13 steel before and after growing the (TiAl)N films. X-ray diffraction (XRD) was employed to study the coatings, observing the H13 steel and (TiAl)N oxidation temperature. Morphological characteristics were analyzed by means of an Atomic Force Microscopy (AFM). Scanning electron microscopy (SEM) revealed the surface chemical composition of the films and morphological details of the samples.

  3. Electronic phase diagram of epitaxial La{sub 1?x}Sr{sub x}FeO{sub 3} films

    SciTech Connect (OSTI)

    Xie, Y. J.; Scafetta, M. D.; Moon, E. J.; Krick, A. L.; Sichel-Tissot, R. J.; May, S. J.

    2014-08-11

    The electronic phase diagram of epitaxial La{sub 1?x}Sr{sub x}FeO{sub 3} films is presented. The films were grown on SrTiO{sub 3} using molecular beam epitaxy with post-growth annealing to minimize oxygen vacancies. Insulating behavior is observed from x?=?0–0.9, with metallic conduction only present for x?=?1.0. While the La-rich compounds exhibit polaron conduction over all temperatures measured, the Sr-rich films exhibit an electronic phase transition within the compositional window of x?=?0.49–0.9 as revealed by temperature-dependent resistivity measurements. The transition temperatures are found to decrease with increasing Sr content. The constructed phase diagram is discussed in the context of other 3d e{sub g} perovskite systems including manganites and cobaltites.

  4. Surface and Interface Properties of 10–12 Unit Cells Thick Sputter Deposited Epitaxial CeO 2 Films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Saraf, L. V.; Wang, C. M.; Engelhard, M. H.; Nachimuthu, P.

    2008-01-01

    Ultrathin and continuous epitaxial films with relaxed lattice strain can potentially maintain more of its bulk physical and chemical properties and are useful as buffer layers. We study surface, interface, and microstructural properties of ultrathin ( ? 10–12 unit cells thick) epitaxial ceria films grown on single crystal YSZ substrates. The out-of -plane and in-plane lattice parameters indicate relaxation in the continuous film due to misfit dislocations seen by high-resolution transmission electron microscopy (HRTEM) and substrate roughness of ? 1-2 unit cells, confirmed by atomic force microscopy and HRTEM. A combination of secondary sputtering, latticemore »mismatch, substrate roughness, and surface reduction creating secondary phase was likely the cause of surface roughness which should be reduced to a minimum level for effective use of it as buffer layers. « less

  5. All-metallic electrically gated 2H-TaSe{sub 2} thin-film switches and logic circuits

    SciTech Connect (OSTI)

    Renteria, J.; Jiang, C.; Yan, Z.; Samnakay, R.; Goli, P.; Pope, T. R.; Salguero, T. T.; Wickramaratne, D.; Lake, R. K.; Khitun, A. G.; Balandin, A. A.

    2014-01-21

    We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe{sub 2} were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe{sub 2}–Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

  6. Electronic and magnetic properties of manganite thin films with different compositions and its correlation with transport properties: An X-ray resonant magnetic scattering study

    SciTech Connect (OSTI)

    Singh, Surendra; Freeland, J. W.; Fitzsimmons, M. R.; Jeen, H.; Biswas, A.

    2014-12-14

    Here, we present x-ray resonant magnetic dichroism and x-ray resonant magnetic scattering measurements of the temperature dependence of magnetism in Pr-doped La-Ca-Mn-O films grown on (110) NdGaO{sub 3} substrates. We observed thermal hysteresis of the ferromagnetism in one film that also showed large thermal hysteresis of ?18?K in transport measurements. While in a second film of a different nominal chemistry, which showed very small thermal hysteresis ?3?K in transport measurements, no thermal hysteresis of the ferromagnetism was observed. These macroscopic properties are correlated with evolution of surface magnetization across metal insulator transition for these films as observed by soft x-ray resonant magnetic scattering measurements.

  7. Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y{sub 3}Fe{sub 5}O{sub 12}

    SciTech Connect (OSTI)

    Shiomi, Y.; Ohtani, T.; Iguchi, S.; Sasaki, T.; Qiu, Z.; Nakayama, H.; Uchida, K.; Saitoh, E.

    2014-06-16

    We have studied magnetoresistance and Hall effects for 1.8-nm-thick Pt films grown on a ferrimagnetic insulator Y{sub 3}Fe{sub 5}O{sub 12} in a wide temperature (0.46–300?K) and magnetic-field (?15 to 15?T) region. In the low-temperature regime where quantum corrections to conductivity are observed, weak antilocalization behavior observed in Pt films is critically suppressed when the film is attached to Y{sub 3}Fe{sub 5}O{sub 12}. Hall resistance in the Pt film is also affected by Y{sub 3}Fe{sub 5}O{sub 12}, and it exhibits logarithmic temperature dependence in a broad temperature range. The magnetotransport properties in the high-field range are significantly influenced by the interface between Pt and Y{sub 3}Fe{sub 5}O{sub 12}.

  8. Effects of substrate temperature and Cu underlayer thickness on the formation of SmCo{sub 5}(0001) epitaxial thin films

    SciTech Connect (OSTI)

    Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-05-15

    SmCo{sub 5}(0001) epitaxial thin films were prepared on Cu(111) underlayers heteroepitaxially grown on Al{sub 2}O{sub 3}(0001) single-crystal substrates by molecular beam epitaxy. The effects of substrate temperature and Cu underlayer thickness on the crystallographic properties of SmCo{sub 5}(0001) epitaxial films were investigated. The Cu atoms of underlayer diffuse into the SmCo{sub 5} film and substitute the Co sites in SmCo{sub 5} structure forming an alloy compound of Sm(Co,Cu){sub 5}. The ordered phase formation is enhanced with increasing the substrate temperature and with increasing the Cu underlayer thickness. The Cu atom diffusion into the SmCo{sub 5} film is assisting the formation of Sm(Co,Cu){sub 5} ordered phase.

  9. Growth mechanism of Cobalt(II) Phthalocyanine(CoPc) thin films on SiO{sub 2} and muscovite substrates

    SciTech Connect (OSTI)

    Gedda, Murali, E-mail: gedda@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati-781039 (India); Subbarao, Nimmakayala V. V. [Centre for Nano Technology, Indian Institute of Technology Guwahati, Guwahati-781039 (India); Goswami, Dipak K., E-mail: dkg@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati-781039 and Centre for Nano Technology, Indian Institute of Technology Guwahati, Guwahati-781039 (India)

    2014-01-28

    Thin films of Cobalt(II) Phthalocyanine (CoPc) were grown by thermal evaporation technique on two different substrates namely SiO{sub 2} and atomically cleaned muscovite mica(001) at various substrate temperatures. Deposition rate has been maintained to 0.3Å/sec during the growth of the films. The growth process is studied by means of atomic force microscopy (AFM). Films on SiO{sub 2} exhibit only three-dimensional islands and uniformity of these islands improved with substrate temperatures, whereas films on mica (001) consist of long oriented percolated structures. The results revealed that the growth mechanism of CoPc strongly depends on substrate temperatures as well as nature of substrate used. Optical properties were characterized by UV-Visible spectroscopy and structural properties were studied using X-ray diffraction.

  10. The Department Of Film and The UNLV Short Film Archive presents the 7 48-HOUR SHORT FILM contest

    E-Print Network [OSTI]

    Walker, Lawrence R.

    The Department Of Film and The UNLV Short Film Archive presents the 7 th annual 48-HOUR SHORT FILM contest This event is open to anyone who) will write, shoot and edit a film no less than 1 minute and no more than 5

  11. The Department Of Film and The UNLV Short Film Archive presents the 8th 48-HOUR SHORT FILM contest

    E-Print Network [OSTI]

    Walker, Lawrence R.

    The Department Of Film and The UNLV Short Film Archive presents the 8th annual 48-HOUR SHORT FILM contest This event is open to anyone who) will write, shoot and edit a film no less than 1 minute and no more than 5

  12. Responses of Some Dwarf Bean (Phaseolus vulgaris L.) Genotypes Grown in Turkey to Zinc and Boron Applications

    E-Print Network [OSTI]

    Hamurcu, Mehmet; Hakki, Erdogan E; Babaoglu, Mehmet; Gezgin, Sait

    2009-01-01

    grown extensively in Turkey, were determined. Materials andResearch Institutes in Turkey. Trial was conducted within

  13. Fact #844: October 27, 2014 Electricity Generated from Coal has Declined while Generation from Natural Gas has Grown – Dataset

    Broader source: Energy.gov [DOE]

    Excel file with dataset for Fact #844: Electricity Generated from Coal has Declined while Generation from Natural Gas has Grown

  14. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  15. Photoluminescence due to inelastic exciton-exciton scattering in ZnMgO-alloy thin film

    SciTech Connect (OSTI)

    Chia, C. H.; Chen, J. N.; Hu, Y. M. [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 81148, Taiwan (China)

    2011-09-26

    We studied the photoluminescence of ZnMgO thin film, grown by the radiofrequency sputtering method, as a function of excitation intensity and temperature. As the excitation intensity increases, a nonlinear emission band caused by the radiative recombination of the inelastic exciton-exciton scattering was detected at low temperature. We found that the inelastic exciton-exciton scattering process can only persist up to T {approx} 260 K. The nonlinear emission band observed at room temperature is due to the radiative recombination of the electron-hole plasma.

  16. Structure of droplet-epitaxy-grown InAs/GaAs quantum dots

    SciTech Connect (OSTI)

    Cohen, Eyal; Yochelis, Shira; Westreich, Ohad; Shusterman, Sergey; Kumah, Divine P.; Clarke, Roy; Yacoby, Yizhak; Paltiel, Yossi

    2011-09-06

    We have used a direct x-ray phasing method, coherent Bragg rod analysis, to obtain sub-angstrom resolution electron density maps of the InAs/GaAs dot system. The dots were grown by the droplet heteroepitaxy (DHE) technique and their structural and compositional properties are compared with those of dots grown by the strain-driven Stranski-Krastanov method. Our results show that the Ga diffusion into the DHE-grown dots is somewhat larger; however, other characteristics such as the composition of the dots uppermost layers, the interlayer spacing, and the bowing of the atomic layers are similar.

  17. Epitaxial Ni{sub 3}FeN thin films: A candidate for spintronic devices and magnetic sensors

    SciTech Connect (OSTI)

    Loloee, Reza

    2012-07-15

    A new type of epitaxial ferromagnetic nitride (Ni{sub 3} Fe N = permalloy nitride = 'PyN') compound films were grown on Al{sub 2}O{sub 3}(1120) substrates using reactive triode magnetron sputtering. The results of electron back-scattering diffraction and x-ray diffraction techniques indicate a high quality epitaxial crystalline structure with growth normal of (100). Magnetization measurements of epitaxial PyN films revealed several unique results. (1) A textbook square hysteresis loop that suggest existence of single magnetic domain in these films. (2) A coercive field is tunable from a few mOe up to a few Oe by changing the film thickness. (3) A magnetization that switches (rotate) over a very small field range of {delta}H{sub C} {<=} 0.05 Oe, independent of the film thickness. This small {delta}H indicates a very large resistive sensitivity ({delta}R/{delta}H) of the epitaxial PyN. (4) The epitaxial PyN thermal cycling through several cycles between '2 and 800 K' (-271 Degree-Sign C to +527 Degree-Sign C) shows much less degradation only about 2-5% compared to 40% degradation of a simple Py film. Four-probe transport measurements give an anisotropic magnetoresistance of Almost-Equal-To 6%, sufficiently higher than other known ferromagnetic materials. These interesting properties are ideal for a variety of spintronic devices and magnetic sensors.

  18. Preparation and structural characterization of FeCo epitaxial thin films on insulating single-crystal substrates

    SciTech Connect (OSTI)

    Nishiyama, Tsutomu; Ohtake, Mitsuru; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-05-15

    FeCo epitaxial films were prepared on MgO(111), SrTiO{sub 3}(111), and Al{sub 2}O{sub 3}(0001) single-crystal substrates by ultrahigh vacuum molecular beam epitaxy. The effects of insulating substrate material on the film growth process and the structures were investigated. FeCo(110){sub bcc} films grow on MgO substrates with two type domains, Nishiyama-Wassermann (NW) and Kurdjumov-Sachs (KS) relationships. On the contrary, FeCo films grown on SrTiO{sub 3} and Al{sub 2}O{sub 3} substrates include FeCo(111){sub bcc} crystal in addition to the FeCo(110){sub bcc} crystals with NW and KS relationships. The FeCo(111){sub bcc} crystal consists of two type domains whose orientations are rotated around the film normal by 180 deg. each other. The out-of-plane and the in-plane lattice spacings of FeCo(110){sub bcc} and FeCo(111){sub bcc} crystals formed on the insulating substrates are in agreement with those of the bulk Fe{sub 50}Co{sub 50} (at. %) crystal with small errors ranging between +0.2% and +0.4%, showing that the strains in the epitaxial films are very small.

  19. FILM S247 / AMST S483 / HIST S187: FILM, VIDEO & AMERICAN HISTORY

    E-Print Network [OSTI]

    Post, David M.

    and non-fiction traditions, including documentary and experimental film, and will investigate how each hasFILM S247 / AMST S483 / HIST S187: FILM, VIDEO & AMERICAN HISTORY Yale Summer Session B: July 6 the era of film (1890s to present) and the way that films have the power to reflect, engage, enact, enable

  20. Page 140 Film Studies Sonoma State University 2015-2016 Catalog FILM STUDIES

    E-Print Network [OSTI]

    Ravikumar, B.

    Page 140 Film Studies Sonoma State University 2015-2016 Catalog FILM STUDIES PROGRAM OFFICE Nichols@sonoma.edu Program Offered Minor in Film Studies The film studies minor is an interdisciplinary and interdepartmental program that analyzes the theory, history, practice, and cultural signifi- cance of film. Students

  1. The effect of film thickness on the failure strain of polymer-supported metal films

    E-Print Network [OSTI]

    Suo, Zhigang

    The effect of film thickness on the failure strain of polymer-supported metal films Nanshu Lu-supported copper films with a strong (1 1 1) fiber texture and with thicknesses varying from 50 nm to 1 lm. Films with thicknesses below 200 nm fail by intergranular fracture at elongations of only a few percent. Thicker films

  2. Dissecting a Single-Use Film Camera

    E-Print Network [OSTI]

    Zanibbi, Richard

    Dissecting a Single- Use Film Camera RIT Center for Imaging Science #12;WARNING · The single use the BACK of the camera. Leave the front in place. · Remove the AA battery on the left side. You can use this battery in any electronic device that requires a AA battery. BATTERY FILM FILM CANNISTER VIEWFINDER FILM

  3. 3270 Film and Video Program Offered

    E-Print Network [OSTI]

    Dhamala, Mukesh

    3270 Film and Video Program Offered: Bachelor of Arts in Film and Video Department of Communication of the mass media, and the skills necessary for communication careers. Majors are offered in the areas of film and video, journalism, and speech. The major in film and video is designed to provide the student

  4. LEAM Film Development Test Report Prepared by

    E-Print Network [OSTI]

    Rathbun, Julie A.

    ~~ ··········~~~ LEAM Film Development Test Report Prepared by: R. Sii'r'...ms ~1 rf\\:'3· ~ ij ATM Film Development Test Report -~~'·.· ··..· .··. . ~...=-~ ~ IWitJY~W ' ~· CONTENTS 1. PURPOSE 2. SCOPE 3. OBJECTIVES 4. EQUIPMENT DESCRIPTION 4.1 TEST ARTICLE 4.1.1 Film and Film Frame 4.1. 2 Calorimeter

  5. Donor impurity states and related terahertz range nonlinear optical response in GaN cylindrical quantum wires: Effects of external electric and magnetic fields

    SciTech Connect (OSTI)

    Correa, J. D.; Mora-Ramos, M. E.; Duque, C. A.

    2014-06-07

    We report a study on the optical absorption coefficient associated to hydrogenic impurity interstate transitions in zinc-blende GaN quantum wires of cylindrical shape taking into account the effects of externally applied static electric and magnetic fields. The electron states emerge within the effective mass approximation, via the exact diagonalization of the donor-impurity Hamiltonian with parabolic confinement and external field effects. The nonlinear optical absorption is calculated using a recently derived expression for the dielectric susceptibility, obtained via a nonperturbative solution of the density-matrix Bloch equation. Our results show that this treatment eliminates not only the intensity-dependent bleaching effect but also the change in sign of the nonlinear contribution due to the combined effect of asymmetric impurity location and the applied electric field.

  6. Extrinsic anomalous Hall effect in epitaxial Mn{sub 4}N films

    SciTech Connect (OSTI)

    Meng, M.; Wu, S. X. Ren, L. Z.; Zhou, W. Q.; Wang, Y. J.; Wang, G. L.; Li, S. W.

    2015-01-19

    Anomalous Hall effect (AHE) in ferrimagnetic Mn{sub 4}N epitaxial films grown by molecular-beam epitaxy is investigated. The longitudinal conductivity ?{sub xx} is within the superclean regime, indicating Mn{sub 4}N is a highly conducting material. We further demonstrate that the AHE signal in 40-nm-thick films is mainly due to the extrinsic contributions based on the analysis fitted by ?{sub AH}=a??{sub xx0}+b?{sub xx}{sup 2} and ?{sub AH}??{sub xx}. Our study not only provide a strategy for further theoretical work on antiperovskite manganese nitrides but also shed promising light on utilizing their extrinsic AHE to fabricate spintronic devices.

  7. Utility of reactively sputtered CuN{sub x} films in spintronics devices

    SciTech Connect (OSTI)

    Fang Yeyu; Persson, J.; Zha, C.; Willman, J.; Miller, Casey W.; Aakerman, Johan

    2012-04-01

    We have studied nitrified copper (CuN{sub x}) thin films grown by reactive sputtering in the context of spintronic devices. The Ar-to-N{sub 2} flow ratio enables tunability of the electrical resistivity and surface roughness of the CuN{sub x} films, with the former increasing to nearly 20 times that of Cu, and the latter reduced to the atomic scale. Incorporating this into a Ta/CuN{sub x}/Ta seed stack for spin valves improves the current-in-plane (CIP) magnetoresistance; maximum magnetoresistance results with CuN{sub x} seed layer and Cu interlayer. Finally, finite element modeling results are presented that suggest the use of CuN{sub x} in nanocontact spin torque oscillators can enhance current densities by limiting the current spread through the device. This may positively impact threshold currents, power requirements, and device reliability.

  8. Oxidized film structure and method of making epitaxial metal oxide structure

    DOE Patents [OSTI]

    Gan, Shupan [Richland, WA; Liang, Yong [Richland, WA

    2003-02-25

    A stable oxidized structure and an improved method of making such a structure, including an improved method of making an interfacial template for growing a crystalline metal oxide structure, are disclosed. The improved method comprises the steps of providing a substrate with a clean surface and depositing a metal on the surface at a high temperature under a vacuum to form a metal-substrate compound layer on the surface with a thickness of less than one monolayer. The compound layer is then oxidized by exposing the compound layer to essentially oxygen at a low partial pressure and low temperature. The method may further comprise the step of annealing the surface while under a vacuum to further stabilize the oxidized film structure. A crystalline metal oxide structure may be subsequently epitaxially grown by using the oxidized film structure as an interfacial template and depositing on the interfacial template at least one layer of a crystalline metal oxide.

  9. Electric and magnetic behaviors observed in NiO-based thin films under light-irradiation

    SciTech Connect (OSTI)

    Luo, Yi-Dong; Song, Kenan; Shun, Li; Gao, Junqi; Xu, Ben, E-mail: xuben@mail.tsinghua.edu.cn, E-mail: linyh@mail.tsinghua.edu.cn; Lin, Yuan-Hua, E-mail: xuben@mail.tsinghua.edu.cn, E-mail: linyh@mail.tsinghua.edu.cn; Nan, Ce-Wen; Liu, Wei [State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

    2014-09-07

    We report the room-temperature ferromagnetic properties that can be tuned by light irradiation in the Li and Mn co-doped NiO films (LMNO) grown by the spinning coating. The optical tunable magnetic behavior is enhanced by the increase of the Li doping concentration. First-principle calculations reveal that the Li doping plays key roles in the optical tuned magnetic behavior, which brings a 3d-like impurity state to enhance a significant hybridization between the Mn{sup 3+} 3d state and the impurity band, thus strengthening the ferromagnetic coupling effects. Additionally, it can tune the band gap of the LMNO films and produce more holes under the light irradiation, enhancing the optical tuned magnetic behavior.

  10. Tailoring of a metastable material: alfa-FeSi2 thin film

    SciTech Connect (OSTI)

    Cao, Guixin; Singh, David J; Zhang, Xiaoguang; Samolyuk, German D; Qiao, Liang; Parish, Chad M; Ke, Jin; Zhang, Yanwen; Guo, Hangwen; Tang, Siwei; Wang, Wenbin; Yi, Jieyu; Cantoni, Claudia; Siemons, Wolter; Payzant, E Andrew; Biegalski, Michael D; Ward, Thomas Zac; Sales, Brian C; Mandrus, D.; Stocks, George Malcolm; Gai, Zheng

    2015-01-01

    The epitaxially stabilized metallic -FeSi2 thin films on Si(001) were grown using pulsed laser deposition. While the bulk material of -FeSi2 is a high temperature metastable phase and nonmagnetic, the thin film is stabilized at room temperature and shows unusual electronic transport and magnetic properties due to strain modification. The transport renders two different conducting states with a strong crossover at 50 K accompanied by an onset of ferromagnetism as well as a substantial magnetocaloric effect and magnetoresistance. These experimental results are discussed in terms of the unusual electronic structure of -FeSi2 obtained within density functional calculations and Boltzmann transport calculations with and without strain. Our findings provide an example of a tailored material with interesting physics properties for practical applications.

  11. Thin film hydrogen sensor

    DOE Patents [OSTI]

    Lauf, R.J.; Hoffheins, B.S.; Fleming, P.H.

    1994-11-22

    A hydrogen sensor element comprises an essentially inert, electrically-insulating substrate having a thin-film metallization deposited thereon which forms at least two resistors on the substrate. The metallization comprises a layer of Pd or a Pd alloy for sensing hydrogen and an underlying intermediate metal layer for providing enhanced adhesion of the metallization to the substrate. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors, and at least one of the resistors is left uncovered. The difference in electrical resistances of the covered resistor and the uncovered resistor is related to hydrogen concentration in a gas to which the sensor element is exposed. 6 figs.

  12. Vapor deposition of thin films

    DOE Patents [OSTI]

    Smith, David C. (Los Alamos, NM); Pattillo, Stevan G. (Los Alamos, NM); Laia, Jr., Joseph R. (Los Alamos, NM); Sattelberger, Alfred P. (Los Alamos, NM)

    1992-01-01

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  13. Vapor deposition of thin films

    SciTech Connect (OSTI)

    Smith, D.C.; Pattillo, S.G.; Laia, J.R. Jr.; Sattelberger, A.P.

    1990-10-05

    A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl){sub 3}, iridium(allyl){sub 3}, molybdenum(allyl){sub 4}, tungsten(allyl){sub 4}, rhenium (allyl){sub 4}, platinum(allyl){sub 2}, or palladium(allyl){sub 2} are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

  14. Liquid-film electron stripper

    DOE Patents [OSTI]

    Leemann, B.T.; Yourd, R.B.

    1982-03-09

    A thin freestanding oil film is produced in vacuum by directing an oil stream radially inward to the hollow-ground sharp outer edge of a rotating disc. The sides of the edge are roughened somewhat to aid in dispersing oil from the disc. Oil is removed from the surface of disc to prevent formation of oil droplets which might spin off the disc and disrupt the oil film. An ion beam is directed through the thin oil film so that electrons are stripped from the ions to increase their charge.

  15. The film review is a popular way for critics to assess a film's overall quality and determine whether or not they think the film is worth recommending. Film reviews differ from scholarly

    E-Print Network [OSTI]

    Film Review Genre The film review is a popular way for critics to assess a film's overall quality and determine whether or not they think the film is worth recommending. Film reviews differ from scholarly film articles in that they encompass personal and idiosyncratic reactions to and evaluations of a film, as well

  16. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  17. Origami-inspired nanofabrication utilizing physical and magnetic properties of in situ grown carbon nanotubes

    E-Print Network [OSTI]

    In, Hyun Jin

    2010-01-01

    Carbon nanotubes (CNTs), in particular the vertically-aligned variety grown through a plasma enhanced chemical vapor deposition (PECVD)-based process, are highly versatile nanostructures that can be used in a variety of ...

  18. LEAM Film Development Vibration Test Report

    E-Print Network [OSTI]

    Rathbun, Julie A.

    LEAM Film Development Vibration Test Report Prepared by: L. Kaliniec MO. RIV. MO. ATM lOll PAGI 1 Of Z7 DATl! 6- 11 - 71 Approved by: ~~ P. Pilon r #12;LEAM Film Development Vibration Test Report OF LEVELS 7.3 FILM SUPPORT MESH 7.4 FILM FRAME MOUNTS 7.5 FILM FAILURES 8. CONCLUSIONS AND RECOMMENDATIONS 9

  19. Energy band alignment of atomic layer deposited HfO{sub 2} on epitaxial (110)Ge grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04

    The band alignment properties of atomic layer HfO{sub 2} film deposited on epitaxial (110)Ge, grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy. The cross-sectional transmission electron microscopy exhibited a sharp interface between the (110)Ge epilayer and the HfO{sub 2} film. The measured valence band offset value of HfO{sub 2} relative to (110)Ge was 2.28 {+-} 0.05 eV. The extracted conduction band offset value was 2.66 {+-} 0.1 eV using the bandgaps of HfO{sub 2} of 5.61 eV and Ge bandgap of 0.67 eV. These band offset parameters and the interface chemical properties of HfO{sub 2}/(110)Ge system are of tremendous importance for the design of future high hole mobility and low-power Ge-based metal-oxide transistor devices.

  20. Growth and fruiting responses of diverse genotypes of American Upland cotton grown in different environments 

    E-Print Network [OSTI]

    Gannaway, J. R

    1971-01-01

    GROWTH AND FRUITING RESPONSES OF DIVERSE GENOTYPES OF AMERICAN UPLAND COTTON GROWN IN DIFFERENT ENVIRONMENTS A Thesis JOHN ROBERT GANNAWAY Submitted to the Graduate College of Texas A&M University in partial fulfillment of the requirement... for the degree of MASTER OF SCIENCE May 1971 Major Subject: Plant Breeding GROWTH AND FRUITING RESPONSES OF DIVERSE GENOTYPES OF AMERICAN UPLAND COTTON GROWN IN DIFFERENT ENVIRONMENTS A Thesis by JOHN ROBERT GANNAWAY Approved as to style and content by...