Powered by Deep Web Technologies
Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

GaN High Power Devices  

SciTech Connect

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

2

GaN Nanopore Arrays: Fabrication and Characterization  

E-Print Network (OSTI)

GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...

Wang, Yadong

3

GaN: Defect and Device Issues  

SciTech Connect

The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

1998-11-09T23:59:59.000Z

4

Micro Raman Spectroscopy of Annealed Erbium Implanted GaN  

E-Print Network (OSTI)

Wurtzite GaN epilayers grown by metal organic chemical vapor deposition on sapphire substrates were subsequently ion implanted with Er to a dose of 5×10¹? cm?². The implanted samples were annealed in nitrogen atmosphere ...

Vajpeyi, Agam P.

5

Cathodoluminescence Microanalysis of Suspended GaN Nano ...  

Science Conference Proceedings (OSTI)

CL from bulk GaN is dominated by the ~3.4 eV near-band-edge emission. In contrast, the suspended nano-membranes emit a broad defect associated emission ...

6

ARM MJO Investigation Experiment on Gan Island (AMIE-Gan) Science Plan  

Science Conference Proceedings (OSTI)

The overarching campaign, which includes the ARM Mobile Facility 2 (AMF2) deployment in conjunction with the Dynamics of the Madden-Julian Oscillation (DYNAMO) and the Cooperative Indian Ocean experiment on intraseasonal variability in the Year 2011 (CINDY2011) campaigns, is designed to test several current hypotheses regarding the mechanisms responsible for Madden-Julian Oscillation (MJO) initiation and propagation in the Indian Ocean area. The synergy between the proposed AMF2 deployment with DYNAMO/CINDY2011, and the corresponding funded experiment on Manus, combine for an overarching ARM MJO Investigation Experiment (AMIE) with two components: AMF2 on Gan Island in the Indian Ocean (AMIE-Gan), where the MJO initiates and starts its eastward propagation; and the ARM Manus site (AMIE-Manus), which is in the general area where the MJO usually starts to weaken in climate models. AMIE-Gan will provide measurements of particular interest to Atmospheric System Research (ASR) researchers relevant to improving the representation of MJO initiation in climate models. The framework of DYNAMO/CINDY2011 includes two proposed island-based sites and two ship-based locations forming a square pattern with sonde profiles and scanning precipitation and cloud radars at both island and ship sites. These data will be used to produce a Variational Analysis data set coinciding with the one produced for AMIE-Manus. The synergy between AMIE-Manus and AMIE-Gan will allow studies of the initiation, propagation, and evolution of the convective cloud population within the framework of the MJO. As with AMIE-Manus, AMIE-Gan/DYNAMO also includes a significant modeling component geared toward improving the representation of MJO initiation and propagation in climate and forecast models. This campaign involves the deployment of the second, marine-capable, AMF; all of the included measurement systems; and especially the scanning and vertically pointing radars. The campaign will include sonde launches at a rate of eight per day for the duration of the deployment. The increased sonde launches for the entire period matches that of the AMIE-Manus campaign and makes possible a far more robust Variational Analysis forcing data set product for the entire campaign, and thus better capabilities for modeling studies and synergistic research using the data from both AMIE sites.

Long, CL; Del Genio, A; Deng, M; Fu, X; Gustafson, W; Houze, R; Jakob, C; Jensen, M; Johnson, R; Liu, X; Luke, E; May, P; McFarlane, S; Minnis, P; Schumacher, C; Vogelmann, A; Wang, Y; Webster, P; Xie, S; Zhang, C

2011-04-11T23:59:59.000Z

7

Vertically aligned GaN nanotubes - Fabrication and current image analysis  

Science Conference Proceedings (OSTI)

In this work, we present a one step formation method of nanotubes on GaN film, and then map out local current of nanotubes. GaN nanotubes were formed by inductively coupled plasma (ICP) etching and found that tops of these nanotubes were hexagonal with ... Keywords: C-AFM, FESEM, GaN, ICP, Nanotubes

Shang-Chao Hung; Yan-Kuin Su; Shoou-Jinn Chang; Y. H. Chen

2006-11-01T23:59:59.000Z

8

High Voltage GaN Schottky Rectifiers  

SciTech Connect

Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

1999-10-25T23:59:59.000Z

9

Properties of H, O and C in GaN  

DOE Green Energy (OSTI)

The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

Pearton, S.J.; Abernathy, C.R.; Lee, J.W. [Univ. of Florida, Gainesville, FL (United States)] [and others

1996-04-01T23:59:59.000Z

10

Reliability of GaN HEMTs: Electrical and Radiation-induced Failure ...  

Science Conference Proceedings (OSTI)

Symposium, Advanced Materials for Power Electronics, Power Conditioning, and Power Conversion II. Presentation Title, Reliability of GaN HEMTs: Electrical ...

11

Intersubband Absorption at 1.55 ?M In Aln/Gan Multi Quantum Wells ...  

Science Conference Proceedings (OSTI)

Intersubband Absorption at 1.55 ?M In Aln/Gan Multi Quantum Wells Grown at 770 °C by Metal Organic Vapor Phase Epitaxy using Pulse Injection Method.

12

Dynamic Model of Hydrogen in GaN  

NLE Websites -- All DOE Office Websites (Extended Search)

Dynamic Model of Hydrogen in GaN by S. M. Myers and A. F. Wright Motivation-Hydrogen is incorporated into p-type GaN during MOCVD growth, producing highly stable passivation of the Mg acceptors. Complete acceptor activation by thermal H release requires temperatures that threaten material integrity, prompting compromises in device processing. At lower temperatures, forward bias of p-n junctions or electron-beam irradiation produces a metastable, reversible activation without H release. To understand and control such effects, we are developing a mathematical model of H behavior wherein state energies from density-functional theory are employed in diffusion-reaction equations. Previously, we used the greatly simplifying assumptions of local equilibrium among states

13

K8, HVPE Homoepitaxy of p-Type GaN on n-Type Catalyst Free ...  

Science Conference Proceedings (OSTI)

We present the growth of p-type HVPE GaN using catalyst free GaN nitride nanowires as a lattice matched substrate. The nanowires were grown using plasma ...

14

UV-Photoassisted Etching of GaN in KOH  

SciTech Connect

The etch rate of GaN under W-assisted photoelectrochemical conditions in KOH solutions is found to be a strong function of illumination intensity, solution molarity, sample bias and material doping level. At low e-h pair generation rates, grain boundaries are selectively etched, while at higher illumination intensities etch rates for unintentionally doped (n - 3x 10^12Gcm-3) GaN are 2 1000 .min-l. The etching is diffusion limited under our conditions with an activation energy of - 0.8kCal.mol-1. The etched surfaces are rough, but retain their stoichiometry. PEC etching is found to selectively reveal grain boundaries in GaN under low light illumination conditions. At high lamp powers the rates increase with sample temperature and the application of bias to the PEC cell, while they go through a maximum with KOH solution molarity. The etching is diffusion-limited, producing rough surface morphologies that are suitable in a limited number of device fabrication steps. The surfaces however appear to remain relatively close to their stoichiometric composition.

Abernathy, C.R.; Auh, K.H.; Cho, H.; Donovan, S.M.; Han, J.; Lambers, E.S.; Pearton, S.J.; Ren F.; Shul, R.J.

1998-11-12T23:59:59.000Z

15

Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor  

Science Conference Proceedings (OSTI)

Keywords: Ga vacancies, GaN growth, gas feeding method, optical property, rapid thermal chemical vapor deposition (RTCVD), yellow luminescence

Sun Jung Kim; Young Hun Seo; Kee Suk Nahm; Yun Bong Hahn; Hyun Wook Shim; Eun-Kyung Suh; Kee Young Lim; Hyung Jae Lee

1999-08-01T23:59:59.000Z

16

Lighting Enhancement of GaN LEDs by Applying p-Type Ni(P):SnO2 ...  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, Materials Science & Technology 2013. Symposium, Multifunctional Oxides. Presentation Title, Lighting Enhancement of GaN LEDs ...

17

Quantized states in homogenous polarized GaInN GaN quantum wells  

E-Print Network (OSTI)

Quantized states in homogenous polarized GaInN GaN quantum wells C. Wetzel1, S. Kamiyama1, H. Amano wells is calculated in a single particle model. The act- ing electric eld in the wells and the band gap-dimensional well layers our approach is based on induction from results obtained at the binary GaN barri- ers

Wetzel, Christian M.

18

Cubic GaN Light Emitting Diode Grown by Metalorganic Vapor-Phase Epitaxy  

E-Print Network (OSTI)

this paper, we report on the doping characteristics of Si and Mg in the growth of cubic GaN by metalorganic vapor-phase epitaxy (MOVPE). We also report the growth of a p-n diode structure made of cubic GaN, and its characterization by electron-beam-induced-current (EBIC) and current injection measurements.

Hidenao Tanaka Member; Vapor-phase Epitaxy; Atsushi Nakadaira

2000-01-01T23:59:59.000Z

19

GaN membrane-supported UV photodetectors manufactured using nanolithographic processes  

Science Conference Proceedings (OSTI)

Membrane GaN metal-semiconductor-metal (MSM) photodetector structures using nanolithographic techniques have been manufactured for the first time. Very low dark currents and unexpected high values for the responsivity have been obtained. It seems that ... Keywords: GaN, Membrane, Nanolithography, Responsivity, SEM

A. Müller; G. Konstantinidis; M. Dragoman; D. Neculoiu; A. Dinescu; M. Androulidaki; M. Kayambaki; A. Stavrinidis; D. Vasilache; C. Buiculescu; I. Petrini; A. Kostopoulos; D. Dascalu

2009-02-01T23:59:59.000Z

20

X-Ray Studies of GaN Film Grown on Si Using Electrochemical Deposition Techniques  

Science Conference Proceedings (OSTI)

This paper reports on the X-ray studies of GaN thin films deposited on Si (111) substrate at different current density using electrochemical deposition technique. The structural properties of GaN films were studied by X-ray diffraction (XRD). XRD analysis showed that hexagonal wurtzite and cubic zinc blende GaN phases were both deposited on Si (111). The lattice constants, the average size of h-GaN crystals and the in-plane (along a-axis) and out of plane (along c-axis) strains were calculated from XRD analysis.

Al-Heuseen, K.; Hashim, M. R. [Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia (USM), 11800 Minden, Penang (Malaysia)

2011-03-30T23:59:59.000Z

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Comparative study of GaN growth process by MOVPE  

SciTech Connect

A comparative study of two different MOVPE reactors used for GaN growth is presented. Computational fluid dynamics (CFD) was used to determine common gas phase and fluid flow behaviors within these reactors. This paper focuses on the common thermal fluid features of these two MOVPE reactors with different geometries and operating pressures that can grow device-quality GaN-based materials. The study clearly shows that several growth conditions must be achieved in order to grow high quality GaN materials. The high-temperature gas flow zone must be limited to a very thin flow sheet above the susceptor, while the bulk gas phase temperature must be very low to prevent extensive pre-deposition reactions. These conditions lead to higher growth rates and improved material quality. A certain range of gas flow velocity inside the high-temperature gas flow zone is also required in order to minimize the residence time and improve the growth uniformity. These conditions can be achieved by the use of either a novel reactor structure such as a two-flow approach or by specific flow conditions. The quantitative ranges of flow velocities, gas phase temperature, and residence time required in these reactors to achieve high quality material and uniform growth are given.

Sun, J.; Redwing, J.M.; Kuech, T.F.

1999-07-01T23:59:59.000Z

22

Dielectrics for GaN based MIS-diodes  

SciTech Connect

GaN MIS diodes were demonstrated utilizing AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as insulators. A 345 {angstrom} of AlN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a wavemat ECR N2 plasma. For the Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) growth, a multi MBE chamber was used and a 195 {angstrom} oxide is E-beam evaporated from a single crystal source of Ga{sub 5}Gd{sub 3}O{sub 12}. The forward breakdown voltage of AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) diodes are 5V and 6V, respectively, which are significantly improved from {approximately} 1.2 V of schottky contact. From the C-V measurements, both kinds of diodes showed good charge modulation from accumulation to depletion at different frequencies. The insulator GaN interface roughness and the thickness of the insulator were measured with x-ray reflectivity.

Ren, F.; Abernathy, C.R.; MacKenzie, J.D. [Univ. of Florida, Gainesville, FL (United States)] [and others

1998-02-01T23:59:59.000Z

23

Correlation of doping, structure, and carrier dynamics in a single GaN nanorod  

E-Print Network (OSTI)

We report the nanoscale optical investigation of a single GaN p-n junction nanorod by cathodoluminescence (CL) in a scanning transmission electron microscope. CL emission characteristic of dopant-related transitions was ...

Zhou, Xiang

24

Millimeter-wave GaN high electron mobility transistors and their integration with silicon electronics  

E-Print Network (OSTI)

In spite of the great progress in performance achieved during the last few years, GaN high electron mobility transistors (HEMTs) still have several important issues to be solved for millimeter-wave (30 ~ 300 GHz) applications. ...

Chung, Jinwook W. (Jinwook Will)

2011-01-01T23:59:59.000Z

25

RF Power Degradation of GaN High Electron Mobility Transistors  

E-Print Network (OSTI)

We have developed a versatile methodology to systematically investigate the RF reliability of GaN High-Electron Mobility Transistors. Our technique utilizes RF and DC figures of merit to diagnose the degradation of RF ...

Joh, Jungwoo

26

In situ studies of the effect of silicon on GaN growth modes.  

SciTech Connect

We present real-time X-ray scattering studies of the influence of silicon on the homoepitaxial growth mode of GaN grown by metal-organic vapor-phase epitaxy. Both annealing of Si-doped GaN and surface dosing of GaN with disilane are shown to change the mode of subsequent growth from step-flow to layer-by-layer. By comparing the growth behavior induced by doped layers which have been annealed to that induced by surface dosing, we extract an approximate diffusion coefficient for Si in GaN of 3.5 x 10{sup -18} cm{sup 2}/s at 810{sup o}C.

Munkholm, A.; Stephenson, G. B.; Eastman, J. A.; Auciello, O.; Murty, M. V. R.; Thompson, C.; Fini, P.; Speck, J. S.; DenBaars, S. P.; Northern Illinois Univ.; Univ. of California at Santa Barbara

2000-12-01T23:59:59.000Z

27

Light extraction in individual GaN nanowires on Si for LEDs  

E-Print Network (OSTI)

GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

Zhou, Xiang

28

Geomagnetic observatory GAN Jakub Velimsky K. Chandra Shakar Rao Lars W. Pedersen Ahmed Muslim  

E-Print Network (OSTI)

Geomagnetic observatory GAN Jakub Vel´imsk´y K. Chandra Shakar Rao Lars W. Pedersen Ahmed Muslim´imsk´y et al. (ETH,UK,DTU,NGRI,GMO) Geomagnetic observatory GAN 27.4.2011/KG MFF UK 1 / 16 #12;Participating, Univ. Stuttgart) John Riddick (BGS, retired) Vel´imsk´y et al. (ETH,UK,DTU,NGRI,GMO) Geomagnetic

Cerveny, Vlastislav

29

GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

A GaN based depletion mode metal oxide semiconductor field effect transistor (MOSFET) was demonstrated using Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as the gate dielectric. The MOS gate reverse breakdown voltage was > 35V which was significantly improved from 17V of Pt Schottky gate on the same material. A maximum extrinsic transconductance of 15 mS/mm was obtained at V{sub ds} = 30 V and device performance was limited by the contact resistance. A unity current gain cut-off frequency, f{sub {tau}}, and maximum frequency of oscillation, f{sub max} of 3.1 and 10.3 GHz, respectively, were measured at V{sub ds} = 25 V and V{sub gs} = {minus}20 V.

Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Schurman, M.J.

1999-03-02T23:59:59.000Z

30

GaN directional couplers for integrated quantum photonics  

SciTech Connect

Large cross-section GaN waveguides are proposed as a suitable architecture to achieve integrated quantum photonic circuits. Directional couplers with this geometry have been designed with aid of the beam propagation method and fabricated using inductively coupled plasma etching. Scanning electron microscopy inspection shows high quality facets for end coupling and a well defined gap between rib pairs in the coupling region. Optical characterization at 800 nm shows single-mode operation and coupling-length-dependent splitting ratios. Two photon interference of degenerate photon pairs has been observed in the directional coupler by measurement of the Hong-Ou-Mandel dip [C. K. Hong, et al., Phys. Rev. Lett. 59, 2044 (1987)] with 96% visibility.

Zhang Yanfeng; McKnight, Loyd; Watson, Ian M.; Gu, Erdan; Calvez, Stephane; Dawson, Martin D. [Institute of Photonics, SUPA, University of Strathclyde, Glasgow G4 0NW (United Kingdom); Engin, Erman; Cryan, Martin J.; Thompson, Mark G.; O'Brien, Jeremy L. [Centre for Quantum Photonics, H. H. Wills Physics Laboratory and Department of Electrical and Electronic Engineering, University of Bristol, Merchant Venturers Building, Woodland Road, Bristol BS8 1UB (United Kingdom)

2011-10-17T23:59:59.000Z

31

Growth of cubic GaN quantum dots  

SciTech Connect

Zinc-blende GaN quantum dots were grown on 3C-AlN(001) by two different methods in a molecular beam epitaxy system. The quantum dots in method A were fabricated by the Stranski-Krastanov growth process. The quantum dots in method B were fabricated by droplet epitaxy, a vapor-liquid-solid process. The density of the quantum dots was controllable in a range of 10{sup 8} cm{sup -2} to 10{sup 12} cm{sup -2}. Reflection high energy electron diffraction analysis confirmed the zinc-blende crystal structure of the QDs. Photoluminescence spectroscopy revealed the optical activity of the QDs, the emission energy was in agreement with the exciton ground state transition energy of theoretical calculations.

Schupp, T.; Lischka, K.; As, D. J. [Universitaet Paderborn, Department Physik, Warburger Str.100, 33095 Paderborn (Germany); Meisch, T.; Neuschl, B.; Feneberg, M.; Thonke, K. [Institut fuer Quantenmaterie, Universitaet Ulm, 89069 Ulm (Germany)

2010-11-01T23:59:59.000Z

32

The Effect of Periodic Silane Burst on the Properties of GaN on Si (111) Substrates  

E-Print Network (OSTI)

The periodic silane burst technique was employed during metalorganic chemical vapor deposition of epitaxial GaN on AlN buffer layers grown on Si (111). Periodic silicon delta doping during growth of both the AlN and GaN ...

Zang, Keyan

33

Low energy electron beam induced vacancy activation in GaN  

Science Conference Proceedings (OSTI)

Experimental evidence on low energy electron beam induced point defect activation in GaN grown by metal-organic vapor phase epitaxy (MOVPE) is presented. The GaN samples are irradiated with a 5-20 keV electron beam of a scanning electron microscope and investigated by photoluminescence and positron annihilation spectroscopy measurements. The degradation of the band-to-band luminescence of the irradiated GaN films is associated with the activation of point defects. The activated defects were identified as in-grown Ga-vacancies. We propose that MOVPE-GaN contains a significant concentration of passive V{sub Ga}-H{sub n} complexes that can be activated by H removal during low energy electron irradiation.

Nykaenen, H.; Suihkonen, S.; Sopanen, M. [Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto (Finland); Kilanski, L. [Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto (Finland); Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/56, 02-668 Warsaw (Poland); Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto (Finland)

2012-03-19T23:59:59.000Z

34

Realization of compressively strained GaN films grown on Si(110) substrates by inserting a thin AlN/GaN superlattice interlayer  

Science Conference Proceedings (OSTI)

We investigate the strain properties of GaN films grown by plasma-assisted molecular beam epitaxy on Si(110) substrates. It is found that the strain of the GaN film can be converted from a tensile to a compressive state simply by inserting a thin AlN/GaN superlattice structure (SLs) within the GaN film. The GaN layers seperated by the SLs can have different strain states, which indicates that the SLs plays a key role in the strain modulation during the growth and the cooling down processes. Using this simple technique, we grow a crack-free GaN film exceeding 2-{mu}m-thick. The realization of the compressively strained GaN film makes it possible to grow thick GaN films without crack generation on Si substrates for optic and electronic device applications.

Shen, X. Q.; Takahashi, T.; Kawashima, H.; Ide, T.; Shimizu, M. [Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Central 2, Tsukuba-shi, Ibaraki 305-8568 (Japan)

2012-07-16T23:59:59.000Z

35

Charge Separation of Wurtzite/Zinc-blende Heterojunction GaN Nanowires  

DOE Green Energy (OSTI)

The electronic properties of wurtzite/zinc-blende (WZ/ZB) heterostructure GaN are investigated using first-principles methods. A small component of ZB stacking formed along the growth direction in the WZ GaN nanowires does not show a significant effect on the electronic property, whereas a charge separation of electrons and holes occurs along the directions perpendicular to the growth direction in the ZB stacking. The later case provides an efficient way to separate the charge through controlling crystal structure. These results should have significant implications for most state of the art excitonic solar cells and the tuning region in tunable laser diodes.

Wang, Zhiguo; Li, Jingbo; Gao, Fei; Weber, William J.

2010-08-27T23:59:59.000Z

36

Lattice location of deuterium in plasma and gas charged Mg doped GaN  

SciTech Connect

The authors have used ion channeling to examine the lattice configuration of deuterium in Mg doped GaN grown by MOCVD. The deuterium is introduced both by exposure to deuterium gas and to ECR plasmas. A density functional approach including lattice relaxation, was used to calculate total energies for various locations and charge states of hydrogen in the wurtzite Mg doped GaN lattice. Computer simulations of channeling yields were used to compare results of channeling measurements with calculated yields for various predicted deuterium lattice configurations.

Wampler, W.R.; Barbour, J.C.; Seager, C.H.; Myers, S.M. Jr.; Wright, A.F.; Han, J.

1999-12-02T23:59:59.000Z

37

Critical Voltage for Electrical Reliability of GaN High Electron Mobility Transistors on Si Substrate  

E-Print Network (OSTI)

We have evaluated the electrical reliability of GaN HEMTs on Si by carrying out V[subscript DS] = 0 V step-stress experiments. We have found that these devices show a degradation pattern that is very similar to that of ...

Demirtas, Sefa

38

Electron Beam-induced Light Emission and Transport in GaN Nanowires  

SciTech Connect

We report observations of electron beam-induced light from GaN nanowires grown by chemical vapor deposition. GaN nanowires were modified in-situ with deposited opaque platinum coatings to estimate the extent to which light is channeled to the ends of nanowires. Some evidence of light channeling was found, but wire microstructure and defects play an important role in light scattering and transport, limiting the extent to which light is confined. Optical interconnects are powerful components presently applied for high bandwidth communications among high-performance processors. Future circuits based on nanometer-scale components could similarly benefit from optical information transfer among processing blocks. Strong light channeling (and even lasing) has been observed in GaN nanowires, suggesting that these structures could be useful building blocks in a future networked electro-optical processor. However, the extent to which defects and microstructure control optical performance in nanowire waveguides has not been measured. In this study, we use electron microscopy and in-situ modification of individual nanowires to begin to correlate wire structure with light transport efficiency through GaN nanowires tens of microns long.

Tringe, J W; MoberlyChan, W J; Stevens, C G; Davydov, A V; Motayed, A

2006-05-10T23:59:59.000Z

39

GaN CVD Reactions: Hydrogen and Ammonia Decomposition and the Desorption of Gallium  

DOE Green Energy (OSTI)

Isotopic labeling experiments have revealed correlations between hydrogen reactions, Ga desorption, and ammonia decomposition in GaN CVD. Low energy electron diffraction (LEED) and temperature programmed desorption (TPD) were used to demonstrate that hydrogen atoms are available on the surface for reaction after exposing GaN(0001) to deuterium at elevated temperatures. Hydrogen reactions also lowered the temperature for Ga desorption significantly. Ammonia did not decompose on the surface before hydrogen exposure. However, after hydrogen reactions altered the surface, N15H3 did undergo both reversible and irreversible decomposition. This also resulted in the desorption of N2 of mixed isotopes below the onset of GaN sublimation, This suggests that the driving force of the high nitrogen-nitrogen bond strength (226 kcal/mol) can lead to the removal of nitrogen from the substrate when the surface is nitrogen rich. Overall, these findings indicate that hydrogen can influence G-aN CVD significantly, being a common factor in the reactivity of the surface, the desorption of Ga, and the decomposition of ammonia.

Bartram, Michael E.; Creighton, J. Randall

1999-05-26T23:59:59.000Z

40

Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution  

E-Print Network (OSTI)

Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution Aurélien David of photonic crystal PhC -assisted gallium nitride light-emitting diodes LEDs to the existence of unextracted a promising but challenging solution towards efficient solid-state lighting. Conventional GaN-based light-emitting

Recanati, Catherine

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

GaN light-emitting diodes with Archimedean lattice photonic crystals Aurlien David,a  

E-Print Network (OSTI)

GaN light-emitting diodes with Archimedean lattice photonic crystals Aurélien David,a Tetsuo Fujii 2005; published online 16 February 2006 We study GaN-based light emitting diodes incorporating light- emitting diodes LEDs , as they could extract the emitted light otherwise trapped inside

Recanati, Catherine

42

Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes  

SciTech Connect

We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve tunnel injection, relatively low composition AlGaN is used for n- and p-type layers to simultaneously take advantage of effective band alignment and efficient doping. The small height of the quantum dots results in short-wavelength emission and are simultaneously an effective tool to fight the reduction of oscillator strength from quantum-confined Stark effect due to polarization fields. The strong quantum confinement results in room-temperature electroluminescence peaks at 261 and 340 nm, well above the 365 nm bandgap of bulk GaN. The demonstration opens the doorway to exploit many varied features of quantum dot physics to realize high-efficiency short-wavelength light sources.

Verma, Jai; Kandaswamy, Prem Kumar; Protasenko, Vladimir; Verma, Amit; Grace Xing, Huili; Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)] [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)

2013-01-28T23:59:59.000Z

43

LATE NEWS: KK3, Non-Catalytic Synthesis of GaN Nanostructures ...  

Science Conference Proceedings (OSTI)

We have observed the synthesis of gallium nitride (GaN) nanopowders on boron ... as 400°C. The synthesis process is based on the reaction between gallium atoms from the decomposition of gallium acetylacetonate and ammonia gas molecules. ... the crystal structure and growth mechanism of the grown nanostructures.

44

Lifetime estimation of intrinsic silicon nitride MIM capacitors in a gan MMIC process  

E-Print Network (OSTI)

We have studied the reliability of intrinsic SiN MIM capacitors designed for 48 V and 125 [superscript 0]C operation and manufactured in a GaN process flow. It is shown that very small area capacitors (10um x 10um) with a ...

Demirtas, Sefa

45

Ultra High p-doping Material Research for GaN Based Light Emitters  

Science Conference Proceedings (OSTI)

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

Vladimir Dmitriev

2007-06-30T23:59:59.000Z

46

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors  

E-Print Network (OSTI)

We have found that there is a critical drain-to-gate voltage beyond which GaN high-electron mobility transistors start to degrade in electrical-stress experiments. The critical voltage depends on the detailed voltage biasing ...

Joh, Jungwoo

47

Photoluminescence study of the 1.047 eV emission in GaN K. Pressela)  

E-Print Network (OSTI)

GaN/ AlGaN blue green light emitting diode, which has a much higher quantum efficiency than the SiC blue light emitting diode, became possible.2 Presently the wide bandgap semi- conductor GaN is intensively. Especially the 1.19 eV is very intense. Thus one can think of developing a light emitting diode in the near

Nabben, Reinhard

48

Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy  

Science Conference Proceedings (OSTI)

Ti/Al/Ni/Au ohmic contacts were formed on heavily doped n{sup +} metal-polar GaN samples with various Si doping concentrations grown by molecular beam epitaxy. The contact resistivity (R{sub C}) and sheet resistance (R{sub sh}) as a function of corresponding GaN free carrier concentration (n) were measured. Very low R{sub C} values (electron mobility transistors.

Afroz Faria, Faiza; Guo Jia; Zhao Pei; Li Guowang; Kumar Kandaswamy, Prem; Wistey, Mark; Xing Huili; Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)

2012-07-16T23:59:59.000Z

49

Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers.  

SciTech Connect

GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the art HEMT transistors and amplifiers.

Kurtz, Steven Ross; Follstaedt, David Martin; Wright, Alan Francis; Baca, Albert G.; Briggs, Ronald D.; Provencio, Paula Polyak; Missert, Nancy A.; Allerman, Andrew Alan; Marsh, Phil F.; Koleske, Daniel David; Lee, Stephen Roger; Shul, Randy John; Seager, Carleton Hoover; Tigges, Christopher P.

2005-12-01T23:59:59.000Z

50

Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics  

Science Conference Proceedings (OSTI)

Al"2O"3, HfO"2, and composite HfO"2/Al"2O"3 films were deposited on n-type GaN using atomic layer deposition (ALD). The interfacial layer of GaON and HfON was observed between HfO"2 and GaN, whereas the absence of an interfacial layer at Al"2O"3/GaN ... Keywords: Al2O3, Atomic-layer-deposition (ALD), GaN, HfO2, High k dielectric, MOS

Y. C. Chang; M. L. Huang; Y. H. Chang; Y. J. Lee; H. C. Chiu; J. Kwo; M. Hong

2011-07-01T23:59:59.000Z

51

Superlattice-like stacking fault array in ion-irradiated GaN  

SciTech Connect

Controlling defects in crystalline solids is of technological importance for realizing desirable materials properties. Irradiation with energetic particles is useful for designing the spatial distribution and concentration of defects in materials. Here, we performed ion irradiation into hexagonal GaN with the wurtzite structure and demonstrated the spontaneous formation of superlattice-like stacking fault arrays. It was found that the modulation period can be controlled by irradiation conditions and post-irradiation heat treatments.

Ishimaru, Dr. Manabu [Osaka University; Usov, Igor Olegovich [ORNL; Zhang, Yanwen [ORNL; Weber, William J [ORNL

2012-01-01T23:59:59.000Z

52

Ohmic contacts to Si-implanted and un-implanted n-type GaN  

SciTech Connect

We report on ohmic contacts to Si-implanted and un-implanted n-type GaN on sapphire. A ring shaped contact design avoids the need to isolate the contact structures by additional implantation or etching. Metal layers of Al and Ti/Al were investigated. On un-implanted GaN, post metalization annealing was performed in an RTA for 30 seconds in N{sub 2} at 700, 800, and 900 C. A minimum specific contact resistance (r{sub c}) of 1.4{times}10{sup -5} {Omega}{minus}cm{sup 2} was measured for Ti/Al at an annealing temperature of 800 C. Although these values are reasonably low, variations of 95% in specific contact resistance were measured within a 500 {mu}m distance on the wafer. These results are most likely caused by the presence of compensating hydrogen. Specific contact resistance variation was reduced from 95 to 10% by annealing at 900 C prior to metalization. On Si-implanted GaN, un-annealed ohmic contacts were formed with Ti/Al metalization. The implant activation anneal of 1120 C generates nitrogen vacancies that leave the surface heavily n-type, which makes un-annealed ohmic contacts with low contact resistivity possible.

Brown, J; Ramer, J.; Zheng, L.F.; Hersee, S.D. [New Mexico Univ., Albuquerque, NM (United States). Center for High Technology Materials; Zolper, J. [Sandia National Labs., Albuquerque, NM (United States)

1996-02-01T23:59:59.000Z

53

Formation of manganese {delta}-doped atomic layer in wurtzite GaN  

Science Conference Proceedings (OSTI)

We describe the formation of a {delta}-doped manganese layer embedded within c-plane wurtzite gallium nitride using a special molecular beam epitaxy growth process. Manganese is first deposited on the gallium-poor GaN (0001) surface, forming a {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign reconstructed phase. This well-defined surface reconstruction is then nitrided using plasma nitridation, and gallium nitride is overgrown. The manganese content of the {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign phase, namely one Mn per each {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign unit cell, implies that the MnGaN alloy layer has a Mn concentration of up to 33%. The structure and chemical content of the surface are monitored beginning from the initial growth stage up through the overgrowth of 20 additional monolayers (MLs) of GaN. An exponential-like drop-off of the Mn signal with increasing GaN monolayers, as measured by Auger electron spectroscopy, indicates that the highly concentrated Mn layer remains at the {delta}-doped interface. A model of the resultant {delta}-doped structure is formulated based on the experimental data, and implications for possible spintronic applications are discussed.

Shi Meng; Chinchore, Abhijit; Wang Kangkang; Mandru, Andrada-Oana; Liu Yinghao; Smith, Arthur R. [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States)

2012-09-01T23:59:59.000Z

54

Ab initio study on noncompensated CrO codoping of GaN for enhanced solar energy conversion  

SciTech Connect

We describe a novel photocatalyst obtained by codoping GaN with CrO, according to a new "noncompensated" codoping concept based on first-principles calculations. The approach enables controllable narrowing of the GaN band gap with significantly enhanced carrier mobility and photocatalytic activity in the visible light region and thus offers immense potential for application in solar energy conversion, water splitting, and a variety of solar-assisted photocatalysis. Our calculations indicate that the formation energy for the cation doping is greatly reduced by noncompensated codoping with an anion. Although Cr doping alone can split the band gap with the formation of an intermediate band, the mobility is low due to carrier trapping by the localized states. The first-principles calculations also demonstrate that CrO codoping of GaN shifts the Fermi level into the conduction band resulting in high carrier density and mobility.

Pan, Hui [ORNL; Gu, Baohua [ORNL; Eres, Gyula [ORNL; Zhang, Zhenyu [ORNL

2010-03-01T23:59:59.000Z

55

Development of a Bulk GaN Growth Technique for Low Defect Density, Large-Area Native Substrates  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

the Electrochemical Solution the Electrochemical Solution Growth (ESG) Technique for Native GaN Substrates DOE Energy Storage & Power Electronics Research Program 30 September 2008 PI: Karen Waldrip Advanced Power Sources R&D, Dept 2546 PM: Stan Atcitty, John Boyes Sandia National Laboratories, Albuquerque, NM, 87185 Sponsor: Gil Bindewald, DOE Power Electronics & Energy Storage Program Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. Outline * Motivation * Existing GaN Growth Technique - Epitaxial Lateral Overgrowth - Methods for Growing Bulk GaN * Development of the Electrochemical Solution Growth Technique

56

The Effect of Hydrogen Carrier Gas on the Morphological Evolution and Material Properties of GaN on Sapphire  

DOE Green Energy (OSTI)

In-situ optical reflectance is used to monitor the morphological evolution of the two-step GaN growth on sapphire. The amount of H{sub 2} carrier gas used in the growth is observed to strongly influence the morphological evolution of the low temperature buffer layer and the subsequent high temperature nucleation behavior, which in turn affects the structural and electrical properties of the GaN epitaxial films. The optical reflectance transients correlate with the sizes and distributions of nuclei as observed by AFM.

Ng, T.B.; Han, J.; Biefeld, R.M.; Zolper, J.C.; Crawford, M.H.; Follstaell, D.M.

1998-01-01T23:59:59.000Z

57

Metallicity of InN and GaN surfaces exposed to NH{sub 3}.  

Science Conference Proceedings (OSTI)

A systematic study of energies and structures of InN and GaN (0001) surfaces exposed to NH{sub 3} and its decomposition products was performed with first-principles methods. A phenomenological model including electron counting contributions is developed based on calculated DFT energies and is used to identify low-energy structures. These predictions are checked with additional DFT calculations. The equilibrium phase diagrams are found to contain structures that violate the electron counting rule. Densities of states for these structures indicate n-type conductivity, consistent with available experimental results.

Walkosz, W.; Zapol, P.; Stephenson, G. B. (Materials Science Division)

2012-01-01T23:59:59.000Z

58

Evaluation of GaN substrates grown in supercritical basic ammonia  

SciTech Connect

GaN crystals grown by the basic ammonothermal method were investigated for their use as substrates for device regrowth. X-ray diffraction analysis indicated that the substrates contained multiple grains while secondary ion mass spectroscopy (SIMS) revealed a high concentration of hydrogen, oxygen, and sodium. Despite these drawbacks, the emission from the light emitting diode structures grown by metal organic chemical vapor deposition on both the c-plane and m-plane epitaxial wafers was demonstrated. The SIMS depth profiles showed that the diffusion of the alkali metal from the substrate into the epitaxial film was small, especially in the m-direction.

Saito, Makoto; Yamada, Hisashi; Iso, Kenji; Sato, Hitoshi; Hirasawa, Hirohiko; Kamber, Derrick S.; Hashimoto, Tadao; Baars, Steven P. den; Speck, James S.; Nakamura, Shuji [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2009-02-02T23:59:59.000Z

59

Synthesis and characterization of GaN thin films deposited on different substrates using a low-cost electrochemical deposition technique  

Science Conference Proceedings (OSTI)

Gallium nitride GaN thin films were deposited on three different substrates; Si (111), Si (100) and ITO coated glass using electrochemical deposition technique at 20 Degree-Sign C. A mixture of gallium nitrate, ammonium nitrate was used as electrolyte. The deposited films were investigated at room temperature by a series of material characterization techniques, namely; scanning electron microscopy (SEM), EDX and X-ray diffraction (XRD). SEM images and EDX results indicated that the growth of GaN films varies according to the substrates. XRD analyses showed the presence of hexagonal wurtzite and cubic zinc blende GaN phases with the crystallite size around 18-29 nm.

Al-Heuseen, K.; Hashim, M. R. [Al-Balqa Applied University, Ajloun University College (Jordan); School of Physics, Universiti Sains Malaysia, 11800-Penang (Malaysia)

2012-09-06T23:59:59.000Z

60

W and WSi(x) Ohmic Contacts on p- And n-Type GaN  

SciTech Connect

W and WSi ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300-1000 *C. There is minimal reaction (< 100 ~ broadening of the metal/GaN interface) even at 1000 *C. Specific contact resistances in the 10-5 f2-cm2 range are obtained for WSiX on Si-implanted GaN with a peak doping concentration of- 5 x 1020 cm-3, after annealing at 950 `C. On p-GaN, leaky Schottky diode behavior is observed for W, WSiX and Ni/Au contacts at room temperature, but true ohmic characteristics are obtained at 250 - 300 *C, where the specific contact resistances are typically in the 10-2 K2-cm2 range. The best contacts for W and WSiX are obtained after 700 *C annealing for periods of 30- 120 sees. The formation of &WzN interracial phases appear to be important in determining the contact quality.

Abernathy, C.R.; Cao, X.A.; Eizenberg, M.; Han, J.; Lothian, J.R.; Pearton, S.J.; Ren, F.; Shul, R.J.; Zeitouny, A.; Zolper, J.C.

1998-10-13T23:59:59.000Z

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Fabrication and characterization of GaN junction field effect transistors  

SciTech Connect

Junction field effect transistors (JFET) were fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition. The DC and microwave characteristics, as well as the high temperature performance of the devices were studied. These devices exhibited excellent pinch-off and a breakdown voltage that agreed with theoretical predictions. An extrinsic transconductance (g{sub m}) of 48 mS/mm was obtained with a maximum drain current (I{sub D}) of 270 mA/mm. The microwave measurement showed an f{sub T} of 6 GHz and an f{sub max} of 12 GHz. Both the I{sub D} and the g{sub m} were found to decrease with increasing temperature, possibly due to lower electron mobility at elevated temperatures. These JFETs exhibited a significant current reduction after a high drain bias was applied, which was attributed to a partially depleted channel caused by trapped electrons in the semi-insulating GaN buffer layer.

Zhang, L.; Lester, L.F.; Baca, A.G.; Shul, R.J.; Chang, P.C.; Willison, C.L.; Mishra, U.K.; Denbaars, S.P.; Zolper, J.C.

2000-01-11T23:59:59.000Z

62

Atomistic simulation of damage production by atomic and molecular ion irradiation in GaN  

Science Conference Proceedings (OSTI)

We have studied defect production during single atomic and molecular ion irradiation having an energy of 50 eV/amu in GaN by molecular dynamics simulations. Enhanced defect recombination is found in GaN, in accordance with experimental data. Instantaneous damage shows non-linearity with different molecular projectile and increasing molecular mass. Number of instantaneous defects produced by the PF{sub 4} molecule close to target surface is four times higher than that for PF{sub 2} molecule and three times higher than that calculated as a sum of the damage produced by one P and four F ion irradiation (P+4 Multiplication-Sign F). We explain this non-linearity by energy spike due to molecular effects. On the contrary, final damage created by PF{sub 4} and PF{sub 2} shows a linear pattern when the sample cools down. Total numbers of defects produced by Ag and PF{sub 4} having similar atomic masses are comparable. However, defect-depth distributions produced by these species are quite different, also indicating molecular effect.

Ullah, M. W.; Kuronen, A.; Nordlund, K.; Djurabekova, F. [Department of Physics, University of Helsinki, P.O. Box 64, FIN-00014 Helsinki (Finland); Karaseov, P. A.; Titov, A. I. [St. Petersburg State Polytechnic University, 195251 St. Petersburg (Russian Federation)

2012-08-15T23:59:59.000Z

63

Growth of p-type and n-type m-plane GaN by molecular beam epitaxy  

E-Print Network (OSTI)

cm ?3 corresponding to p-type ?lm conductivi- ties as highOF APPLIED PHYSICS 100, 063707 ?2006? Growth of p-type andn-type m-plane GaN by molecular beam epitaxy M. McLaurin, a?

McLaurin, M; Mates, T E; Wu, F; Speck, J S

2006-01-01T23:59:59.000Z

64

Impact of defects on the electrical transport, optical properties and failure mechanisms of GaN nanowires.  

SciTech Connect

We present the results of a three year LDRD project that focused on understanding the impact of defects on the electrical, optical and thermal properties of GaN-based nanowires (NWs). We describe the development and application of a host of experimental techniques to quantify and understand the physics of defects and thermal transport in GaN NWs. We also present the development of analytical models and computational studies of thermal conductivity in GaN NWs. Finally, we present an atomistic model for GaN NW electrical breakdown supported with experimental evidence. GaN-based nanowires are attractive for applications requiring compact, high-current density devices such as ultraviolet laser arrays. Understanding GaN nanowire failure at high-current density is crucial to developing nanowire (NW) devices. Nanowire device failure is likely more complex than thin film due to the prominence of surface effects and enhanced interaction among point defects. Understanding the impact of surfaces and point defects on nanowire thermal and electrical transport is the first step toward rational control and mitigation of device failure mechanisms. However, investigating defects in GaN NWs is extremely challenging because conventional defect spectroscopy techniques are unsuitable for wide-bandgap nanostructures. To understand NW breakdown, the influence of pre-existing and emergent defects during high current stress on NW properties will be investigated. Acute sensitivity of NW thermal conductivity to point-defect density is expected due to the lack of threading dislocation (TD) gettering sites, and enhanced phonon-surface scattering further inhibits thermal transport. Excess defect creation during Joule heating could further degrade thermal conductivity, producing a viscous cycle culminating in catastrophic breakdown. To investigate these issues, a unique combination of electron microscopy, scanning luminescence and photoconductivity implemented at the nanoscale will be used in concert with sophisticated molecular-dynamics calculations of surface and defect-mediated NW thermal transport. This proposal seeks to elucidate long standing material science questions for GaN while addressing issues critical to realizing reliable GaN NW devices.

Armstrong, Andrew M.; Aubry, Sylvie; Shaner, Eric Arthur; Siegal, Michael P.; Li, Qiming; Jones, Reese E.; Westover, Tyler; Wang, George T.; Zhou, Xiao Wang; Talin, Albert Alec; Bogart, Katherine Huderle Andersen; Harris, C. Thomas; Huang, Jian Yu

2010-09-01T23:59:59.000Z

65

Ammothermal Growth of Gan Substrates For Leds: High-Pressure Ammonothermal Process for Bulk Gallium Nitride Crystal Growth for Energy Efficient Commercially Competitive Lighting  

Science Conference Proceedings (OSTI)

Broad Funding Opportunity Announcement Project: The new GaN crystal growth method is adapted from that used to grow quartz crystals, which are very inexpensive and represent the second-largest market for single crystals for electronic applications (after silicon). More extreme conditions are required to grow GaN crystals and therefore a new type of chemical growth chamber was invented that is suitable for large-scale manufacturing. A new process was developed that grows GaN crystals at a rate that is more than double that of current processes. The new technology will enable GaN substrates with best-in-world quality at lowest-in-world prices, which in turn will enable new generations of white LEDs, lasers for full-color displays, and high-performance power electronics.

None

2011-01-01T23:59:59.000Z

66

Evolution of AlN buffer layers on Silicon and the effect on the property of the expitaxial GaN film  

E-Print Network (OSTI)

The morphology evolution of high-temperature grown AlN nucleation layers on (111) silicon has been studied using atomic force microscopy (AFM). The structure and morphology of subsequently grown GaN film were characterized ...

Zang, Keyan

67

Accelerated Publication: Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO2 as a gate dielectric  

Science Conference Proceedings (OSTI)

Accumulation-type GaN metal-oxide-semiconductor field-effect-transistors (MOSFET's) with atomic-layer-deposited HfO"2 gate dielectrics have been fabricated; a 4@mm gate-length device with a gate dielectric of 14.8nm in thickness (an equivalent SiO"2 ... Keywords: Atomic layer deposition (ALD), Current collapse, GaN, HfO2, Metal-oxide-semiconductor field-effect-transistor (MOSFET)

Y. C. Chang; W. H. Chang; Y. H. Chang; J. Kwo; Y. S. Lin; S. H. Hsu; J. M. Hong; C. C. Tsai; M. Hong

2010-11-01T23:59:59.000Z

68

Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE  

Science Conference Proceedings (OSTI)

GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 {mu}m and 0.095 {mu}m for GaN and AlN layers, respectively. The XRD spectra indicate that no sign of cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.

Yusoff, Mohd Zaki Mohd; Hassan, Zainuriah; Woei, Chin Che; Hassan, Haslan Abu; Abdullah, Mat Johar [Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia and Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia); Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia)

2012-06-29T23:59:59.000Z

69

Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon  

SciTech Connect

Optically pumped lasing at room temperature in a silicon based monolithic single GaN nanowire with a two-dimensional photonic crystal microcavity is demonstrated. Catalyst-free nanowires with low density ({approx}10{sup 8} cm{sup -2}) are grown on Si by plasma-assisted molecular beam epitaxy. High resolution transmission electron microscopy images reveal that the nanowires are of wurtzite structure and they have no observable defects. A single nanowire laser fabricated on Si is characterized by a lasing transition at {lambda}=371.3 nm with a linewidth of 0.55 nm. The threshold is observed at a pump power density of {approx}120 kW/cm{sup 2} and the spontaneous emission factor {beta} is estimated to be 0.08.

Heo, Junseok; Guo Wei; Bhattacharya, Pallab [Center for Nanoscale Photonics and Spintronics, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2011-01-10T23:59:59.000Z

70

Magnetically active vacancy related defects in irradiated GaN layers  

Science Conference Proceedings (OSTI)

We present the studies of magnetic properties of 2 MeV {sup 4}He{sup +}-irraadiated GaN grown by metal-organic chemical-vapor deposition. Particle irradiation allowed controllable introduction of Ga-vacancy in the samples. The magnetic moments with concentrations changing between 4.3 and 8.3 Multiplication-Sign 10{sup 17}cm{sup -3} showing superparamagnetic blocking at room temperature are observed. The appearance of clear hysteresis curve at T=5K with coercive field of about H{sub C} Almost-Equal-To 270 Oe suggests that the formation of more complex Ga vacancy related defects is promoted with increasing Ga vacancy content. The small concentration of the observed magnetically active defects with respect to the total Ga-vacancy concentration suggests that the presence of the oxygen/hydrogen-related vacancy complexes is the source of the observed magnetic moments.

Kilanski, L.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto Espoo (Finland); Szymczak, R. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Kruszka, R. [Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw (Poland)

2012-08-13T23:59:59.000Z

71

Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays  

Science Conference Proceedings (OSTI)

Molecular beam epitaxy (MBE) on patterned Si/AlN/Si(111) substrates was used to obtain regular arrays of uniform-size GaN nanowires (NWs). The silicon top layer has been patterned with e-beam lithography, resulting in uniform arrays of holes with different diameters (d{sub h}) and periods (P). While the NW length is almost insensitive to the array parameters, the diameter increases significantly with d{sub h} and P till it saturates at P values higher than 800 nm. A diffusion induced model was used to explain the experimental results with an effective diffusion length of the adatoms on the Si, estimated to be about 400 nm.

Gotschke, T.; Schumann, T.; Limbach, F.; Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Juelich GmbH and JARA-Fundamentals of Future Information Technology (FIT), 52425 Juelich (Germany); Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Juelich GmbH and JARA-Fundamentals of Future Information Technology (FIT), 52425 Juelich (Germany)

2011-03-07T23:59:59.000Z

72

Structural Properties of Eu-Doped GaN Investigated by Raman Spectroscopy  

DOE Green Energy (OSTI)

Rare-earth (RE) impurities doped GaN are highly promising candidates for light emitting device applications due to their efficient electroluminescence properties at room temperature. Among those, Eu doped GaN has been identified as an excellent material for the red spectral region due to its strong emission at 620 nm. As a transition internal to the Eu doping atom (4f-4f), light emission originates in a much smaller complex than the more flexibly controllable quantum structures of wells, wires, and dots. This is thought to make the center less susceptible to structural defects and in particular radiation damage in the lattice host. Nevertheless, the lattice host is crucial for providing the excitation in from of free electrons and holes. In this respect, the actual lattice site Eu occupies in the host lattice, i.e. in GaN, is important. A large fraction of Eu atoms are typically inactive which must be attributed to their lattice site and local environment. GaN films implanted with Eu to concentrations of {approx}10{sup 18} cm{sup -3} were subjected to a highly directed beam of 500 keV He{sup +} at a dose of 5 x 10{sup 14} cm{sup -2}. By means of a shadow mask, irradiated and unexposed regions lie very close to each other on the same sample. We used optical and structural analysis to identify the exerted radiation damage. At the full radiation dose, photoluminescence intensity has decayed to {approx}0.01 of its initial value. From the dose dependence of the radiation decay we previously concluded, that this decay is in part due to the destruction of radiative Eu sites [J.W. Tringe, unpublished (2006)]. Along the transition from virgin to irradiated material we analyze the accumulated damage in terms of surface morphology (atomic force microscopy), crystallinity (x-ray diffraction), and phonon dispersion using micro-Raman spectroscopy. In addition to the well-studied E{sub 2}(high) mode, two new vibrational modes at 659 cm{sup -1} and 201 cm{sup -1} were observed in the Eu implanted and annealed sample, prior to He{sup +} irradiation. These modes are either remnants of the implantation damage or related to the Eu impurity. As such they can be indicative of the actual lattice site the Eu atom resides on. After irradiation, broad Raman modes at 300 cm-1 are being observed. This band indicates disorder activated Raman scattering (DARS) due to the radiation damage. An additional narrow mode appears at 672 cm{sup -1}, which can possibly be due to a nitrogen vacancy related vibrational mode. The continuous transition from irradiated to un-irradiated sample allows the direct evolution of radiation damage and its coordinated effects in structural, optical and vibrational properties. By its systematic correlation we anticipate to be able to elucidate the Eu lattice interaction and the processes of radiation damage.

Senawiratne, J; Xia, Y; Detchprohm, T; Tringe, J W; Stevens, C G; Wetzel, C

2006-06-20T23:59:59.000Z

73

Method of growing GaN films with a low density of structural defects using an interlayer  

DOE Patents (OSTI)

A dramatic reduction of the dislocation density in GaN was obtained by insertion of a single thin interlayer grown at an intermediate temperature (IT-IL) after the growth of an initial grown at high temperature. A description of the growth process is presented with characterization results aimed at understanding the mechanisms of reduction in dislocation density. A large percentage of the threading dislocations present in the first GaN epilayer are found to bend near the interlayer and do not propagate into the top layer which grows at higher temperature in a lateral growth mode. TEM studies show that the mechanisms of dislocation reduction are similar to those described for the epitaxial lateral overgrowth process, however a notable difference is the absence of coalescence boundaries.

Bourret-Courchesne, Edith D. (Richmond, CA)

2003-01-01T23:59:59.000Z

74

Efficient Switches for Solar Power Conversion: Four Quadrant GaN Switch Enabled Three Phase Grid-Tied Microinverters  

Science Conference Proceedings (OSTI)

Solar ADEPT Project: Transphorm is developing power switches for new types of inverters that improve the efficiency and reliability of converting energy from solar panels into useable electricity for the grid. Transistors act as fast switches and control the electrical energy that flows in an electrical circuit. Turning a transistor off opens the circuit and stops the flow of electrical current; turning it on closes the circuit and allows electrical current to flow. In this way a transistor can be used to convert DC from a solar panel into AC for use in a home. Transphorm’s transistors will enable a single semiconductor device to switch electrical currents at high-voltage in both directions—making the inverter more compact and reliable. Transphorm is using Gallium Nitride (GaN) as a semiconductor material in its transistors instead of silicon, which is used in most conventional transistors, because GaN transistors have lower losses at higher voltages and switching frequencies.

None

2012-02-13T23:59:59.000Z

75

Photonic crystal laser lift-off GaN light-emitting diodes Aurlien David,a  

E-Print Network (OSTI)

Photonic crystal laser lift-off GaN light-emitting diodes Aurélien David,a Tetsuo Fujii,b Brendan March 2006 We report on the fabrication and study of laser lift-off GaN-based light-emitting diodes-state lighting. However, as is the case for any light-emitting diode LED , light tends to be trapped in the high

Recanati, Catherine

76

Transistors for Electric Motor Drives: High-Performance GaN HEMT Modules for Agile Power Electronics  

SciTech Connect

ADEPT Project: Transphorm is developing transistors with gallium nitride (GaN) semiconductors that could be used to make cost-effective, high-performance power converters for a variety of applications, including electric motor drives which transmit power to a motor. A transistor acts like a switch, controlling the electrical energy that flows around an electrical circuit. Most transistors today use low-cost silicon semiconductors to conduct electrical energy, but silicon transistors don’t operate efficiently at high speeds and voltage levels. Transphorm is using GaN as a semiconductor material in its transistors because GaN performs better at higher voltages and frequencies, and it is more energy efficient than straight silicon. However, Transphorm is using inexpensive silicon as a base to help keep costs low. The company is also packaging its transistors with other electrical components that can operate quickly and efficiently at high power levels—increasing the overall efficiency of both the transistor and the entire motor drive.

None

2010-09-01T23:59:59.000Z

77

Characterization of Stress Relaxation, Dislocations and Crystallographic Tilt Via X-ray Microdiffraction in GaN (0001) Layers Grown by Maskless Pendeo-Epitaxy  

Science Conference Proceedings (OSTI)

Intrinsic stresses due to lattice mismatch and high densities of threading dislocations and extrinsic stresses resulting from the mismatch in the coefficients of thermal expansion are present in almost all III-Nitride heterostructures. Stress relaxation in the GaN layers occurs in conventional and in pendeo-epitaxial films via the formation of additional misfit dislocations, domain boundaries, elastic strain and wing tilt. Polychromatic X-ray microdiffraction, high resolution monochromatic X-ray diffraction and finite element simulations have been used to determine the distribution of strain, dislocations, sub-boundaries and crystallographic wing tilt in uncoalesced and coalesced GaN layers grown by maskless pendeo-epitaxy. An important parameter was the width-to-height ratio of the etched columns of GaN from which the lateral growth of the wings occurred. The strain and tilt across the stripes increased with the width-to-height ratio. Tilt boundaries formed in the uncoalesced GaN layers at the column/wing interfaces for samples with a large ratio. Sharper tilt boundaries were observed at the interfaces formed by the coalescence of two laterally growing wings. The wings tilted upward during cooling to room temperature for both the uncoalesced and the coalesced GaN layers. It was determined that finite element simulations that account for extrinsic stress relaxation can explain the experimental results for uncoalesced GaN layers. Relaxation of both extrinsic and intrinsic stress components in the coalesced GaN layers contribute to the observed wing tilt and the formation of sub-boundaries.

Barabash, R.I.; Ice, G.E.; Liu, W.; Einfeldt, S.; Hommel, D.; Roskowski, A.M.; Davis, R.F. (ORNL)

2010-06-25T23:59:59.000Z

78

Characterization of GaN nanowires grown on PSi, PZnO and PGaN on Si (111) substrates by thermal evaporation  

Science Conference Proceedings (OSTI)

In this research, we used an easy and inexpensive method to synthesize highly crystalline GaN nanowires (NWs); on different substrates such as porous silicon (PSi), porous zinc oxide (PZnO) and porous gallium nitride (PGaN) on Si (111) wafer by thermal evaporation using commercial GaN powder without any catalyst. Micro structural studies by scanning electron microscopy and transmission electron microscope measurements reveal the role of different substrates in the morphology, nucleation and alignment of the GaN nanowires. The degree of alignment of the synthesized nanowires does not depend on the lattice mismatch between wires and their substrates. Further structural and optical characterizations were performed using high resolution X-ray diffraction and energy-dispersive X-ray spectroscopy. Results indicate that the nanowires are of single-crystal hexagonal GaN. The quality and density of grown GaN nanowires for different substrates are highly dependent on the lattice mismatch between the nanowires and their substrates and also on the size of the porosity of the substrates. Nanowires grown on PGaN have the best quality and highest density as compared to nanowires on other substrates. By using three kinds of porous substrates, we are able to study the increase in the alignment and density of the nanowires.

Shekari, Leila; Hassan, Haslan Abu; Thahab, Sabah M.; Hassan, Zainuriah [Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Materials Engineering Department, College of Engineering, University of Kufa, Najaf (Iraq); Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

2012-06-20T23:59:59.000Z

79

Polarity inversion of N-face GaN using an aluminum oxide interlayer  

Science Conference Proceedings (OSTI)

The polarity of GaN grown by plasma-assisted molecular beam epitaxy was inverted from N-face to Ga-face by inserting a composite AlN/aluminum oxide (AlO{sub x}) interlayer structure at the inversion interface. The change in polarity was verified in situ by reflection high energy electron diffraction via intensity transients and postgrowth surface reconstructions, and ex situ by convergent beam electron diffraction and etch studies in an aqueous potassium hydroxide solution. The inverted materials showed smooth surfaces and good electrical properties. AlGaN/GaN high electron mobility transistors fabricated on the inverted epilayers showed good dc and high frequency performance. A current-gain cutoff frequency (f{sub T}) of 21 GHz and maximum oscillation frequency (f{sub max}) of 61 GHz were measured in devices with a gate length of 0.7 {mu}m. These data compare favorably to those of Ga-face AlGaN/GaN devices with a similar structure grown on Si-face SiC substrates.

Wong, Man Hoi; Mishra, Umesh K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 (United States); Wu, Feng; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

2010-12-15T23:59:59.000Z

80

Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy  

Science Conference Proceedings (OSTI)

Deep level defects in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy were characterized using deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) and compared with polar c-plane GaN that was grown simultaneously in the same growth run. Significant differences in both the levels present and their concentrations were observed upon comparison of both growth orientations. DLTS revealed electron traps with activation energies of 0.14 eV, 0.20 eV, and 0.66 eV in the m-plane material, with concentrations that were {approx}10-50 x higher than traps of similar activation energies in the c-plane material. Likewise, DLOS measurements showed {approx}20 x higher concentrations of both a C{sub N} acceptor-like state at E{sub C} - 3.26 eV, which correlates with a high background carbon concentration observed by secondary ion mass spectroscopy for the m-plane material [A. Armstrong, A. R. Arehart, B. Moran, S. P. DenBaars, U. K. Mishra, J. S. Speck, and S. A. Ringel, Appl. Phys. Lett. 84, 374 (2004)], and the V{sub Ga}-related state level at E{sub C} - 2.49 eV, which is consistent with an enhanced yellow luminescence observed by photoluminescence. The findings suggest a strong impact of growth dynamics on the incorporation of impurities and electrically active native point defects as a function of GaN growth plane polarity.

Zhang, Z.; Arehart, A. R. [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States); Hurni, C. A.; Speck, J. S. [Department of Materials, University of California, Santa Barbara, California 93106-5050 (United States); Yang, J. [Department of Materials Science and Engineering, Ohio State University, Columbus, Ohio 43210 (United States); Myers, R. C.; Ringel, S. A. [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

2012-01-30T23:59:59.000Z

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN  

DOE Green Energy (OSTI)

Etch rates up to 7,000 {angstrom}/min. for GaN are obtained in Cl{sub 2}/H{sub 2}/Ar or BCl{sub 3}/Ar ECR discharges at 1--3mTorr and moderate dc biases. Typical rates with HI/H{sub 2} are about a factor of three lower under the same conditions, while CH{sub 4}/H{sub 2} produces maximum rates of only {approximately}2,000 {angstrom}/min. The role of additives such as SF{sub 6}, N{sub 2}, H{sub 2} or Ar to the basic chlorine, bromine, iodine or methane-hydrogen plasma chemistries are discussed. Their effect can be either chemical (in forming volatile products with N) or physical (in breaking bonds or enhancing desorption of the etch products). The nitrides differ from conventional III-V`s in that bond-breaking to allow formation of the etch products is a critical factor. Threshold ion energies for the onset of etching of GaN, InGaN and InAlN are {ge} 75 eV.

Pearton, S.J.; Vartuli, C.B.; Lee, J.W.; Donovan, S.M.; MacKenzie, J.D.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States); Shul, R.J. [Sandia National Labs., Albuquerque, NM (United States); McLane, G.F. [Army Research Lab., Fort Monmouth, NJ (United States); Ren, F. [AT and T Bell Labs., Murray Hill, NJ (United States)

1996-04-01T23:59:59.000Z

82

Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy  

SciTech Connect

Low-temperature AlN buffer layers grown via plasma-assisted molecular beam epitaxy on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusions, with their size, shape, and tilt determined by the AlN V/III flux ratio. GaN nanowires were frequently observed to adopt the structural characteristics of the underlying AlN columns, including the size and the degree of tilt. Piezoresponse force microscopy and polarity-sensitive etching indicate that the AlN films and the protruding columns have a mixed crystallographic polarity. Convergent beam electron diffraction indicates that GaN nanowires are Ga-polar, suggesting that Al-polar columns are nanowire nucleation sites for Ga-polar nanowires. GaN nanowires of low density could be grown on AlN buffers that were predominantly N-polar with isolated Al-polar columns, indicating a high growth rate for Ga-polar nanowires and suppressed growth of N-polar nanowires under typical growth conditions. AlN buffer layers grown under slightly N-rich conditions (V/III flux ratio = 1.0 to 1.3) were found to provide a favorable growth surface for low-density, coalescence-free nanowires.

Brubaker, Matt D. [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); DARPA Center for Integrated Micro/Nano-Electromechanical Transducers (iMINT), University of Colorado, Boulder, Colorado 80309 (United States); Levin, Igor; Davydov, Albert V. [Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Rourke, Devin M.; Sanford, Norman A.; Bertness, Kris A. [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Bright, Victor M. [Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); DARPA Center for Integrated Micro/Nano-Electromechanical Transducers (iMINT), University of Colorado, Boulder, Colorado 80309 (United States)

2011-09-01T23:59:59.000Z

83

Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions  

SciTech Connect

Acceptor doping of GaN with Mg during plasma-assisted molecular beam epitaxy, under N-rich conditions and a relatively high growth temperature of 740 deg. C, was investigated. The p-doping level steadily increases with increasing Mg flux. The highest doping level achieved, determined from Hall measurements, is 2.1x10{sup 18} cm{sup -3}. The corresponding doping efficiency and hole mobility are approx4.9% and 3.7 cm{sup 2}/V s at room temperature. Cross-sectional transmission electron microscopy and photoluminescence measurements confirm good crystalline and optical quality of the Mg-doped layers. An InGaN/GaN quantum dot light emitting diode (lambda{sub peak}=529 nm) with p-GaN contact layers grown under N-rich condition exhibits a low series resistance of 9.8 OMEGA.

Zhang Meng; Bhattacharya, Pallab; Guo Wei; Banerjee, Animesh [Department of Electrical Engineering and Computer Science, Solid-State Electronics Laboratory, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2010-03-29T23:59:59.000Z

84

Step-flow anisotropy of the m-plane GaN (1100) grown under nitrogen-rich conditions by plasma-assisted molecular beam epitaxy  

Science Conference Proceedings (OSTI)

The homoepitaxial growth of m-plane (1100) GaN was investigated by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions. The surface morphologies as a function of sample miscut were studied, providing evidence for a strong growth anisotropy that is a consequence of the anisotropy of Ga adatom diffusion barriers on the m-plane surface recently calculated ab initio[Lymperakis and Neugebauer, Phys. Rev. B 79, 241308(R) (2009)]. We found that substrate miscut toward [0001] implies a step flow toward while substrate miscut toward [0001] causes formation of atomic steps either perpendicular or parallel to the [0001] direction, under N-rich conditions at 730 deg C. We describe the growth conditions for achieving atomically flat m-plane GaN layers with parallel atomic steps.

Sawicka, Marta; Siekacz, Marcin; Skierbiszewski, Czeslaw [Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, PL-01-142 Warszawa (Poland); TopGaN Ltd., Sokolowska 29/37, PL-01-142 Warszawa (Poland); Turski, Henryk; Krysko, Marcin; DziePcielewski, Igor; Grzegory, Izabella [Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, PL-01-142 Warszawa (Poland); Smalc-Koziorowska, Julita [Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, PL-01-142 Warszawa (Poland); TopGaN Ltd., Sokolowska 29/37, PL-01-142 Warszawa (Poland); Warsaw University of Technology, Faculty of Material Science and Engineering, Woloska 141, PL-02-507 Warszawa (Poland)

2011-06-15T23:59:59.000Z

85

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth  

Science Conference Proceedings (OSTI)

Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f{sub t} and f{sub max} in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 OMEGA mum to a GaN 2DEG.

Dasgupta, Sansaptak; Nidhi,; Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K. [Department of ECE, University of California, Santa Barbara, California 93106 (United States) and Department of Materials, University of California, Santa Barbara, California 93106 (United States)

2010-04-05T23:59:59.000Z

86

High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy  

Science Conference Proceedings (OSTI)

Transport and optical properties of random networks of c-axis oriented wedge-shaped GaN nanowalls grown spontaneously on c-plane sapphire substrates through molecular beam epitaxy are investigated. Our study suggests a one dimensional confinement of carriers at the top edges of these connected nanowalls, which results in a blue shift of the band edge luminescence, a reduction of the exciton-phonon coupling, and an enhancement of the exciton binding energy. Not only that, the yellow luminescence in these samples is found to be completely suppressed even at room temperature. All these changes are highly desirable for the enhancement of the luminescence efficiency of the material. More interestingly, the electron mobility through the network is found to be significantly higher than that is typically observed for GaN epitaxial films. This dramatic improvement is attributed to the transport of electrons through the edge states formed at the top edges of the nanowalls.

Bhasker, H. P.; Dhar, S.; Sain, A. [Physics Department, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India); Kesaria, Manoj; Shivaprasad, S. M. [International Centre for Material Science, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India)

2012-09-24T23:59:59.000Z

87

Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy  

SciTech Connect

The effects of NH{sub 3} flow, group III flux, and substrate growth temperature on indium incorporation and surface morphology have been investigated for bulk InGaN films grown by ammonia molecular beam epitaxy. The incorporation of unintentional impurity elements (H, C, O) in InGaN films was studied as a function of growth temperature for growth on polar (0001) GaN on sapphire templates, nonpolar (1010) bulk GaN, and semipolar (1122), (2021) bulk GaN substrates. Enhanced indium incorporation was observed on both (1010) and (2021) surfaces relative to c-plane, while reduced indium incorporation was observed on (1122) for co-loaded conditions. Indium incorporation was observed to increase with decreasing growth temperature for all planes, while being relatively unaffected by the group III flux rates for a 1:1 Ga:In ratio. Indium incorporation was found to increase at the expense of a decreased growth rate for higher ammonia flows; however, smooth surface morphology was consistently observed for growth on semipolar orientations. Increased concentrations of oxygen and hydrogen were observed on semipolar and nonpolar orientations with a clear trend of increased hydrogen incorporation with indium content.

Browne, David A.; Young, Erin C.; Lang, Jordan R.; Hurni, Christophe A.; Speck, James S. [Materials Department, University of California Santa Barbara, Santa Barbara, California 93106 (United States)

2012-07-15T23:59:59.000Z

88

As-grown deep-level defects in n-GaN grown by metal-organic chemical vapor deposition on freestanding GaN  

SciTech Connect

Traps of energy levels E{sub c}-0.26 and E{sub c}-0.61 eV have been identified as as-grown traps in n-GaN grown by metal-organic chemical vapor deposition by using deep level transient spectroscopy of the Schottky contacts fabricated by resistive evaporation. The additional traps of E{sub c}-0.13 and E{sub c}-0.65 eV have been observed in samples whose contacts are deposited by electron-beam evaporation. An increase in concentration of the E{sub c}-0.13 and E{sub c}-0.65 eV traps when approaching the interface between the contact and the GaN film supports our argument that these traps are induced by electron-beam irradiation. Conversely, the depth profiles of as-grown traps show different profiles between several samples with increased or uniform distribution in the near surface below 50 nm. Similar profiles are observed in GaN grown on a sapphire substrate. We conclude that the growth process causes these large concentrations of as-grown traps in the near-surface region. It is speculated that the finishing step in the growth process should be an essential issue in the investigation of the surface state of GaN.

Chen Shang; Ishikawa, Kenji; Hori, Masaru [Nagoya University, Chikusa, Nagoya 464-8603 (Japan); Honda, Unhi; Shibata, Tatsunari; Matsumura, Toshiya; Tokuda, Yutaka [Aichi Institute of Technology, Yakusa, Toyota 470-0392 (Japan); Ueda, Hiroyuki; Uesugi, Tsutomu; Kachi, Tetsu [Toyota Central R and D Laboratories, Inc., Yokomichi, Nagakute 480-1192 (Japan)

2012-09-01T23:59:59.000Z

89

Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy  

SciTech Connect

The hole concentration p in Mg-doped GaN films grown by ammonia molecular beam epitaxy depends strongly on the growth temperature T{sub GR}. At T{sub GR}=760 Degree-Sign C, GaN:Mg films showed a hole concentration of p=1.2 Multiplication-Sign 10{sup 18} cm{sup -3} for [Mg]=4.5 Multiplication-Sign 10{sup 19} cm{sup -3}, while at T{sub GR}=840 Degree-Sign C, p=4.4 Multiplication-Sign 10{sup 16} cm{sup -3} for [Mg]=7 Multiplication-Sign 10{sup 19} cm{sup -3}. Post-growth annealing did not increase p. The sample grown at 760 Degree-Sign C exhibited a low resistivity of 0.7 {Omega}cm. The mobility for all the samples was around 3-7 cm{sup 2}/V s. Temperature-dependent Hall measurements and secondary ion mass spectroscopy suggest that the samples grown at T{sub GR}>760 Degree-Sign C are compensated by an intrinsic donor rather than hydrogen.

Hurni, Christophe A.; Lang, Jordan R.; Burke, Peter G.; Speck, James S. [Materials Department, University of California, Santa Barbara, 93106-5050 California (United States)

2012-09-03T23:59:59.000Z

90

Photoconduction efficiencies and dynamics in GaN nanowires grown by chemical vapor deposition and molecular beam epitaxy: A comparison study  

Science Conference Proceedings (OSTI)

The normalized gains, which determines the intrinsic photoconduction (PC) efficiencies, have been defined and compared for the gallium nitride (GaN) nanowires (NWs) grown by chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). By excluding the contributions of experimental parameters and under the same light intensity, the CVD-grown GaN NWs exhibit the normalized gain which is near two orders of magnitude higher than that of the MBE-ones. The temperature-dependent time-resolved photocurrent measurement further indicates that the higher photoconduction efficiency in the CVD-GaN NWs is originated from the longer carrier lifetime induced by the higher barrier height ({phi}{sub B} = 160 {+-} 30 mV) of surface band bending. In addition, the experimentally estimated barrier height at 20 {+-} 2 mV for the MBE-GaN NWs, which is much lower than the theoretical value, is inferred to be resulted from the lower density of charged surface states on the non-polar side walls.

Chen, R. S. [Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Tsai, H. Y. [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Huang, Y. S. [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Chen, Y. T. [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Chen, L. C. [Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China); Chen, K. H. [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China)

2012-09-10T23:59:59.000Z

91

Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source  

Science Conference Proceedings (OSTI)

InAlN lattice-matched to GaN was grown by molecular beam epitaxy (MBE) using ammonia as the nitrogen source. The alloy composition, growth conditions, and strain coherence of the InAlN were verified by high resolution x-ray diffraction {omega}-2{theta} scans and reciprocal space maps. Scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy of the InAlN revealed the absence of lateral composition modulation that was observed in the films grown by plasma-assisted MBE. InAlN/AlN/GaN high electron mobility transistors with smooth surfaces were fabricated with electron mobilities exceeding 1600 cm{sup 2}/Vs and sheet resistances below 244 {Omega}/sq.

Wong, Man Hoi; Wu Feng; Hurni, Christophe A.; Choi, Soojeong; Speck, James S.; Mishra, Umesh K. [Department of Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106 (United States)

2012-02-13T23:59:59.000Z

92

Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy  

Science Conference Proceedings (OSTI)

Deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) were utilized to investigate the behavior of deep states in m-plane, n-type GaN grown by ammonia-based molecular beam epitaxy (NH{sub 3}-MBE) as a function of systematically varied V/III growth flux ratios. Levels were detected at E{sub C} - 0.14 eV, E{sub C} - 0.21 eV, E{sub C} - 0.26 eV, E{sub C} - 0.62 eV, E{sub C} - 0.67 eV, E{sub C} - 2.65 eV, and E{sub C} - 3.31 eV, with the concentrations of several traps exhibiting systematic dependencies on V/III ratio. The DLTS spectra are dominated by traps at E{sub C} - 0.14 eV and E{sub C} - 0.67 eV, whose concentrations decreased monotonically with increasing V/III ratio and decreasing oxygen impurity concentration, and by a trap at E{sub C} - 0.21 eV that revealed no dependence of its concentration on growth conditions, suggestive of different physical origins. Higher concentrations of deeper trap states detected by DLOS with activation energies of E{sub C} - 2.65 eV and E{sub C} - 3.31 eV in each sample did not display measureable sensitivity to the intentionally varied V/III ratio, necessitating further study on reducing these deep traps through growth optimization for maximizing material quality of NH{sub 3}-MBE grown m-plane GaN.

Zhang, Z.; Arehart, A. R. [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States); Hurni, C. A.; Speck, J. S. [Department of Materials, University of California, Santa Barbara, California 93106-5050 (United States); Ringel, S. A. [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States); Institute for Materials Research, Ohio State University, Columbus, Ohio 43210 (United States)

2012-10-08T23:59:59.000Z

93

Transition between the 1 x 1 and ({radical}3 x 2{radical}3)R30{degree} surface structures of GaN in the vapor-phase environment  

SciTech Connect

Out-of-plane structures of the GaN(0001) surface in the metal-organic chemical vapor deposition (MOCVD) environment have been determined using in situ grazing-incidence X-ray scattering. The authors measured 11{bar 2}{ell} crystal truncation rod intensities at a variety of temperatures and ammonia partial pressures on both sides of the 1 x 1 to ({radical}3 x 2{radical}3)R30{degree} surface phase transition. The out-of-plane structure of the ({radical}3 x 2{radical}3)R30{degree} phase appears to be nearly independent of temperature below the transition, while the structure of the 1 x 1 phase changes increase rapidly as the phase transition is approached from above. A model for the structure of the 1 x 1 phase with a partially-occupied top Ga layer agrees well with the data. The observed temperature dependence is consistent with a simple model of the equilibrium between the vapor phase and the surface coverage of Ga and N. In addition, the authors present results on the kinetics of reconstruction domain coarsening following a quench into the ({radical}3 x 2{radical}3)R30{degree} phase field.

Munkholm, A.; Thompson, C.; Stephenson, G. B.; Eastman, J. A.; Auciello, O.; Fini, P.; Speck, J. S.; DenBaars, S. P.

2000-01-12T23:59:59.000Z

94

Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN  

Science Conference Proceedings (OSTI)

We investigate, via time-resolved photoluminescence, the temperature-dependence of charge carrier recombination mechanisms in nonpolar (Al,Ga)N/GaN single quantum wells (QWs) grown via molecular beam epitaxy on the a-facet of bulk GaN crystals. We study the influence of both QW width and barrier Al content on the dynamics of excitons in the 10-320 K range. We first show that the effective lifetime of QW excitons {tau} increases with temperature, which is evidence that nonradiative mechanisms do not play any significant role in the low-temperature range. The temperature range for increasing {tau} depends on the QW width and Al content in the (Al,Ga)N barriers. For higher temperatures, we observe a reduction in the QW emission lifetime combined with an increase in the decay time for excitons in the barriers, until both exciton populations get fully thermalized. Based on analysis of the ratio between barrier and QW emission intensities, we demonstrate that the main mechanism limiting the radiative efficiency in our set of samples is related to nonradiative recombination in the (Al,Ga)N barriers of charge carriers that have been thermally emitted from the QWs.

Corfdir, P.; Dussaigne, A.; Giraud, E.; Ganiere, J.-D.; Grandjean, N.; Deveaud-Pledran, B. [Institute of Condensed Matter Physics, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Teisseyre, H. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Suski, T.; Grzegory, I. [Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Lefebvre, P. [Laboratoire Charles Coulomb - UMR5221 - CNRS - Universite Montpellier 2, 34095 Montpellier (France)

2012-02-01T23:59:59.000Z

95

Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy  

Science Conference Proceedings (OSTI)

Quaternary AlInGaN layers were grown on conventional GaN buffer layers on sapphire by metal organic vapour phase epitaxy at different surface temperatures and different reactor pressures with constant precursor flow conditions. A wide range in compositions within 30-62% Al, 5-29% In, and 23-53% Ga was covered, which leads to different strain states from high tensile to high compressive. From high-resolution x-ray diffraction and Rutherford backscattering spectrometry, we determined the compositions, strain states, and crystal quality of the AlInGaN layers. Atomic force microscopy measurements were performed to characterize the surface morphology. A critical strain value for maximum In incorporation near the AlInGaN/GaN interface is presented. For compressively strained layers, In incorporation is limited at the interface as residual strain cannot exceed an empirical critical value of about 1.1%. Relaxation occurs at about 15 nm thickness accompanied by strong In pulling. Tensile strained layers can be grown pseudomorphically up to 70 nm at a strain state of 0.96%. A model for relaxation in compressively strained AlInGaN with virtual discrete sub-layers, which illustrates the gradually changing lattice constant during stress reduction is presented.

Reuters, Benjamin; Finken, M.; Wille, A.; Kalisch, H.; Vescan, A. [RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074 Aachen (Germany); Juelich Aachen Research Alliance, JARA-FIT, Wilhelm-Johnen-Strasse, 52428 Juelich (Germany); Hollaender, B. [Juelich Aachen Research Alliance, JARA-FIT, Wilhelm-Johnen-Strasse, 52428 Juelich (Germany); Forschungszentrum Juelich GmbH, PGI9-IT, 52425 Juelich (Germany); Heuken, M. [RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074 Aachen (Germany); AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany)

2012-11-01T23:59:59.000Z

96

Analyzing the growth of In{sub x}Ga{sub 1-x}N/GaN superlattices in self-induced GaN nanowires by x-ray diffraction  

Science Conference Proceedings (OSTI)

Self-induced GaN nanowires are grown by plasma-assisted molecular beam epitaxy, with In{sub x}Ga{sub 1-x}N quantum wells inserted to form an axial superlattice. From the {omega}-2{theta} scans of a laboratory x-ray diffraction experiment, we obtain the superlattice period, the thickness of the quantum wells, and the In content in this layer. The axial growth rate of the In{sub x}Ga{sub 1-x}N quantum wells is significantly enhanced, which we attribute to increased Ga diffusion along the nanowire sidewalls in the presence of In.

Woelz, M.; Kaganer, V. M.; Brandt, O.; Geelhaar, L.; Riechert, H.

2011-06-27T23:59:59.000Z

97

Impacts of anisotropic lattice relaxation on crystal mosaicity and luminescence spectra of m-plane Al{sub x}Ga{sub 1-x}N films grown on m-plane freestanding GaN substrates by NH{sub 3} source molecular beam epitaxy  

SciTech Connect

In-plane anisotropic lattice relaxation was correlated with the crystal mosaicity and luminescence spectra for m-plane Al{sub x}Ga{sub 1-x}N films grown on a freestanding GaN substrate by NH{sub 3}-source molecular beam epitaxy. The homoepitaxial GaN film exhibited A- and B-excitonic emissions at 8 K, which obeyed the polarization selection rules. For Al{sub x}Ga{sub 1-x}N overlayers, the m-plane tilt mosaic along c-axis was the same as the substrate as far as coherent growth was maintained (x{<=}0.25). However, it became more severe than along the a-axis for lattice-relaxed films (x{>=}0.52). The results are explained in terms of anisotropic lattice and thermal mismatches between the film and the substrate. Nonetheless, all the Al{sub x}Ga{sub 1-x}N films exhibited a near-band-edge emission peak and considerably weak deep emission at room temperature.

Hoshi, T.; Hazu, K.; Ohshita, K.; Kagaya, M.; Onuma, T.; Chichibu, S. F. [CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577 (Japan); Fujito, K. [Optoelectronics Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku 300-1295 (Japan); Namita, H. [Mitsubishi Chemical Group Science and Technology Research Center, Inc., 8-3-1 Chuo, Ami, Inashiki 300-0332 (Japan)

2009-02-16T23:59:59.000Z

98

Photoluminescence from GaN Nanowires  

Science Conference Proceedings (OSTI)

... into commercial light emitting diodes and commercial laser diodes that operate from ultraviolet (UV) to green wavelengths. ... Phys 103, 124309 (2008 ...

2011-10-03T23:59:59.000Z

99

Bright Future for GaN Nanowires  

Science Conference Proceedings (OSTI)

... Recently they found that by creating a grid-like pattern of openings on the order of ... "That's an advantage for high electrical power applications." The ...

2011-11-28T23:59:59.000Z

100

Airport, Transport & Hotel Information | ORNL  

NLE Websites -- All DOE Office Websites (Extended Search)

Airport Information SHARE Airport Information Information related to the Knoxville Airport is listed below. You can find individual airlines' websites by following the "Airlines"...

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Emergency Guidebook for General Aviation Airports  

E-Print Network (OSTI)

Emergency Guidebook for General Aviation Airports A Guidebook for Municipal Airport Managers #12;Emergency Guidebook for General Aviation Airports Published by: Minnesota Airport Technical Assistance................................................................................................................................................1 Developing an Airport Emergency Plan

Janssen, Michel

102

Congestion delays at hub airports  

E-Print Network (OSTI)

A deterministic model was developed to study the effects of inefficient scheduling on flight delays at hub airports. The model bases the delay calculation on published schedule data and on user-defined airport capacities. ...

St. George, Martin J.

1986-01-01T23:59:59.000Z

103

Advanced Dielectric Integration in GaN High Frequency Devices  

Science Conference Proceedings (OSTI)

Symposium, Advanced Materials for Power Electronics, Power Conditioning, and Power Conversion ... Potential Ceramic Dielectrics for Air Force Applications.

104

Y2, Threading Defect Elimination in GaN Nanostructures  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

105

Anisotropic Evaporation of GaN Nanowires Analyzed Using Atom ...  

Science Conference Proceedings (OSTI)

Development of ZnO/MgO/p-Si Heterostructures for Pure UV Light Emitting Diode with Carrier Blocking Layer · Effect of Annealing and Additives on Defects and ...

106

Orthodox etching of HVPE-grown GaN  

E-Print Network (OSTI)

orthodox etching in molten salts (KOH [9], eutectic alloy ofnot only to etching in molten salts (KOH, KOH+NaOH eutectic)important for etching in molten salts of morphologically

2006-01-01T23:59:59.000Z

107

Fabrication of Photonic Crystal Patterns on Gan-Based Light ...  

Science Conference Proceedings (OSTI)

Energy Efficient Sintering of Al/Cu Nanocomposites Using Different Microwave ... of Powder-based Metals via Current Activated Tip-Based Sintering (CATS).

108

BB2, Novel Cs-Free GaN Photocathodes  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters · Hide details for [

109

ARM - VAP Product - 30smplcmask1zwang  

NLE Websites -- All DOE Office Websites (Extended Search)

Airport, Gan Island, Maldives GRW M1 Browse Data Graciosa Island, Azores, Portugal HFE M1 Browse Data Shouxian, Anhui, China PVC M1 Browse Data Highland Center, Cape Cod MA; AMF 1...

110

The impact of airline-airport relations on airport management decisions  

E-Print Network (OSTI)

Airlines, in the past, have had an important influence on airport operations through privileges granted them by the airport lease agreements. Airport administrators and sponsoring agencies have agreed to grant these ...

Cohen, Dayl Arlene

1985-01-01T23:59:59.000Z

111

Airport Electrification Strategy at the Los Angeles International Airport  

Science Conference Proceedings (OSTI)

In an era of rapidly increasing fuel costs, airlines are struggling to control their expenses. Switching from diesel or gasoline powered ground support equipment (GSE) at airports is an attractive option for airlines to save money on fuel and reduced maintenance costs. Los Angeles International Airport (LAX), a leader in the development and use of alternative fuel vehicles, is an ideal place to formulate a strategy and case study for GSE electrification. EPRI together with Los Angeles Department of Water...

2008-10-20T23:59:59.000Z

112

The Joint Airport Weather Studies Project  

Science Conference Proceedings (OSTI)

The Joint Airport Weather Studies (JAWS) Project will investigate the microburst event, having 2–10 km spatial and 2–10 min temporal scales, at Denver's Stapleton International Airport during the summer of 1982. JAWS applications and technology ...

John McCarthy; James W. Wilson; T. Theodore Fujita

1982-01-01T23:59:59.000Z

113

Impact of Heavy Aircraft Operations on Airport Capacity at Newark Liberty International Airport  

E-Print Network (OSTI)

Aviation System Performance Metrics (ASPM) departure and arrival rate data is collected for four common airport confi gurations at Newark Liberty International Airport (EWR) under Visual Meteorological Conditions (VMC) for ...

Simaiakis, Ioannis

114

Tackling uncertainty in airport design : a real options approach  

E-Print Network (OSTI)

The airport industry is changing. Once understood as stand-alone public infrastructures, many modern airports now operate within privatized multi-airport systems and contend with previously unknown competitive pressures. ...

Chambers, Richard-Duane

2007-01-01T23:59:59.000Z

115

Improving public transportation to Boston Logan International Airport  

E-Print Network (OSTI)

Boston Logan International Airport is the largest airport in New England and the 1 9 th busiest airport in the United States, serving 29.3 million passengers (arrivals and departures) in 2012. There are approximately 36,900 ...

Cao, Siyuan, M. Eng. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

116

Impact of Heavy Aircraft Operations on Airport Capacity at Newark Liberty International Airport  

E-Print Network (OSTI)

Impact of Heavy Aircraft Operations on Airport Capacity at Newark Liberty International Airport Meteorological Conditions (VMC) for the period 2007-2008. The ef- fect of the number of Heavy (including Boeing that Heavy departures and arrivals negatively impact overall airport capacity. Mechanisms by which

117

Airport Electrification Strategy at the John Wayne Airport in Orange County, California  

Science Conference Proceedings (OSTI)

As a growth-oriented airport in the Los Angeles Metropolitan area, John Wayne Airport is taking a proactive approach to emission reduction in order to facilitate low environmental impact growth. This report evaluates existing electrification efforts at John Wayne Airport and explores new electrification opportunities in an effort to develop an overall strategy for minimizing emissions in the future.

2010-02-05T23:59:59.000Z

118

LEDs Ready for Takeoff at Louisiana Airport | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

LEDs Ready for Takeoff at Louisiana Airport LEDs Ready for Takeoff at Louisiana Airport LEDs Ready for Takeoff at Louisiana Airport July 14, 2010 - 3:34pm Addthis Hammond, La., airport is replacing the existing incandescent taxiway lights (pictured) with LEDs. | Photo courtesy of Hammond Northshore Regional Airport Hammond, La., airport is replacing the existing incandescent taxiway lights (pictured) with LEDs. | Photo courtesy of Hammond Northshore Regional Airport Stephen Graff Former Writer & editor for Energy Empowers, EERE What are the key facts? Upgrades for safety, energy at Hammond airport possible through Recovery Act Taxiway lights to be replaced with LEDs Airport could save up to $15,000 annually on electric bills Energy efficiency is taking off at the airport in Hammond, La., about 70

119

Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

Atlanta Airport Atlanta Airport Converts Shuttles to CNG to someone by E-mail Share Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Facebook Tweet about Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Twitter Bookmark Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Google Bookmark Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Delicious Rank Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Digg Find More places to share Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on AddThis.com... Sept. 9, 2012 Atlanta Airport Converts Shuttles to CNG L earn how an Atlanta company saves money and conserves fuel with compressed natural gas airport shuttles.

120

Alternative Fuels Data Center: Dallas Airport Operates With Alternative  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

Dallas Airport Dallas Airport Operates With Alternative Fuels to someone by E-mail Share Alternative Fuels Data Center: Dallas Airport Operates With Alternative Fuels on Facebook Tweet about Alternative Fuels Data Center: Dallas Airport Operates With Alternative Fuels on Twitter Bookmark Alternative Fuels Data Center: Dallas Airport Operates With Alternative Fuels on Google Bookmark Alternative Fuels Data Center: Dallas Airport Operates With Alternative Fuels on Delicious Rank Alternative Fuels Data Center: Dallas Airport Operates With Alternative Fuels on Digg Find More places to share Alternative Fuels Data Center: Dallas Airport Operates With Alternative Fuels on AddThis.com... Sept. 5, 2009 Dallas Airport Operates With Alternative Fuels F ind out how Dallas/Fort Worth International Airport uses alternative fuels

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

LEDs Ready for Takeoff at Louisiana Airport | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

LEDs Ready for Takeoff at Louisiana Airport LEDs Ready for Takeoff at Louisiana Airport LEDs Ready for Takeoff at Louisiana Airport July 14, 2010 - 3:34pm Addthis Hammond, La., airport is replacing the existing incandescent taxiway lights (pictured) with LEDs. | Photo courtesy of Hammond Northshore Regional Airport Hammond, La., airport is replacing the existing incandescent taxiway lights (pictured) with LEDs. | Photo courtesy of Hammond Northshore Regional Airport Stephen Graff Former Writer & editor for Energy Empowers, EERE What are the key facts? Upgrades for safety, energy at Hammond airport possible through Recovery Act Taxiway lights to be replaced with LEDs Airport could save up to $15,000 annually on electric bills Energy efficiency is taking off at the airport in Hammond, La., about 70

122

Alternative Fuels Data Center: Propane Powers Airport Shuttles in New  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

Propane Powers Airport Propane Powers Airport Shuttles in New Orleans to someone by E-mail Share Alternative Fuels Data Center: Propane Powers Airport Shuttles in New Orleans on Facebook Tweet about Alternative Fuels Data Center: Propane Powers Airport Shuttles in New Orleans on Twitter Bookmark Alternative Fuels Data Center: Propane Powers Airport Shuttles in New Orleans on Google Bookmark Alternative Fuels Data Center: Propane Powers Airport Shuttles in New Orleans on Delicious Rank Alternative Fuels Data Center: Propane Powers Airport Shuttles in New Orleans on Digg Find More places to share Alternative Fuels Data Center: Propane Powers Airport Shuttles in New Orleans on AddThis.com... Feb. 19, 2011 Propane Powers Airport Shuttles in New Orleans D iscover how the New Orleans airport displaced over 139,000 gallons of

123

Representativeness of Wind Observations at Airports  

Science Conference Proceedings (OSTI)

Wind information for use at airports can be called representative if it provides an optimal estimate of wind variations to be expected over the runway. It is shown that a single anemometer at a nonideal but reasonable location will usually ...

J. Wieringa

1980-09-01T23:59:59.000Z

124

Alternative Fuels Data Center: Colorado Airport Relies on Natural Gas  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

Colorado Airport Colorado Airport Relies on Natural Gas Fueling Stations to someone by E-mail Share Alternative Fuels Data Center: Colorado Airport Relies on Natural Gas Fueling Stations on Facebook Tweet about Alternative Fuels Data Center: Colorado Airport Relies on Natural Gas Fueling Stations on Twitter Bookmark Alternative Fuels Data Center: Colorado Airport Relies on Natural Gas Fueling Stations on Google Bookmark Alternative Fuels Data Center: Colorado Airport Relies on Natural Gas Fueling Stations on Delicious Rank Alternative Fuels Data Center: Colorado Airport Relies on Natural Gas Fueling Stations on Digg Find More places to share Alternative Fuels Data Center: Colorado Airport Relies on Natural Gas Fueling Stations on AddThis.com... July 1, 2010 Colorado Airport Relies on Natural Gas Fueling Stations

125

Alternative Fuels Data Center: Voluntary Airport Low Emission (VALE)  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

Voluntary Airport Low Voluntary Airport Low Emission (VALE) Program to someone by E-mail Share Alternative Fuels Data Center: Voluntary Airport Low Emission (VALE) Program on Facebook Tweet about Alternative Fuels Data Center: Voluntary Airport Low Emission (VALE) Program on Twitter Bookmark Alternative Fuels Data Center: Voluntary Airport Low Emission (VALE) Program on Google Bookmark Alternative Fuels Data Center: Voluntary Airport Low Emission (VALE) Program on Delicious Rank Alternative Fuels Data Center: Voluntary Airport Low Emission (VALE) Program on Digg Find More places to share Alternative Fuels Data Center: Voluntary Airport Low Emission (VALE) Program on AddThis.com... More in this section... Federal State Advanced Search All Laws & Incentives Sorted by Type Voluntary Airport Low Emission (VALE) Program

126

Z5, Effect of Traps Spatial Localization on GaN HEMT Static ...  

Science Conference Proceedings (OSTI)

Conference Tools for 2010 Electronic Materials Conference ... In this work we discuss how trap state formation during reverse gate-source and ... by means of the commercial DESSIS-ISE (Synopsis Inc.) simulator showed that acceptor traps

127

Ferromagnetism in GaN: Gd: A density functional theory study  

SciTech Connect

First principle calculations of the electronic structure and magnetic interaction of GaN:Gd have been performed within the Generalized Gradient Approximation (GGA) of the density functional theory (DFT) with the on-site Coulomb energy U taken into account (also referred to as GGA+U). The ferromagnetic p-d coupling is found to be over two orders of magnitude larger than the s-d exchange coupling. The experimental colossal magnetic moments and room temperature ferromagnetism in GaN:Gd reported recently are explained by the interaction of Gd 4f spins via p-d coupling involving holes introduced by intrinsic defects such as Ga vacancies.

Stevenson, Cynthia; Stevenson, Cynthia

2008-02-04T23:59:59.000Z

128

Effect of Oxidation on GaN Studied by Photoluminescence and ...  

Science Conference Proceedings (OSTI)

Symposium, Advanced Materials for Power Electronics, Power Conditioning, and Power Conversion ... Potential Ceramic Dielectrics for Air Force Applications.

129

Development of a Bulk GaN Growth Technique for Low Defect Density...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Enabling Next-Generation Power Electronics: Electrochemical Solution Growth (ESG) Technique for Bulk Gallium Nitride Substrates Karen Waldrip Dept. 2546, Advanced Power Sources R&D...

130

A17: Morphology Variations of GaN Nanowires and Devices  

Science Conference Proceedings (OSTI)

B7: Synthesis and Electrical Properties of K2NiF4-Type (Ca2-xLnx)MnO4 (Ln=Nd and Sm) · B8: Monitoring Oxygen Diffusion in Gd-Doped Ceria by Null ...

131

Development of a Bulk GaN Growth Technique for Low Defect Density...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Technique: Electrochemical Solution Growth (ESG) Use salt flow to deliver precursors Increase growth rate through flux of reactants (increase spin rate) Precursors can be...

132

Optimal Decentralized Protocol for Electric Vehicle Charging Lingwen Gan Ufuk Topcu Steven Low  

E-Print Network (OSTI)

day according to the price profile broadcast by the utility, and the utility updates the price profile is implemented, even a 10% pene- tration of EVs may cause unacceptable variations in the volt- age profiles of the integration challenges, defer infrastructure investment needed otherwise, and even stabilize the grid

Low, Steven H.

133

Effect of trapping on the critical voltage for degradation in gan high electron mobility transistors  

E-Print Network (OSTI)

We have performed V[subscript DS] = 0 V and OFF-state step-stress experiments on GaN-on-Si and GaN-on-SiC high electron mobility transistors under UV illumination and in the dark. We have found that for both stress conditions, ...

Demirtas, Sefa

134

Polarized Emission from Single GaN Quantum Dots Grown by Molecular Beam Epitaxy  

Science Conference Proceedings (OSTI)

Polarization resolved microphotoluminescence measurements of single MBE-grown GaN/Al(Ga)N quantum dots (QDs) have been performed. The exciton and biexciton peaks with full width at half maximum as narrow as dots, resulting in different built-in electric field. Moreover, a strongly linearly polarized emission is observed for the investigated dots with a degree of linear polarization of about 0.9, interpreted as the valence-band mixing induced by in-plane anisotropy due to strain and/or QD shape.

Amloy, S. [Department of Physics, Chemistry, and Biology (IFM), Linkoeping University, S-58183 Linkoeping (Sweden); Department of Physics, Faculty of Science, Thaksin University, 93110 Phattalung (Thailand); Yu, K. H.; Karlsson, K. F.; Holtz, P. O. [Department of Physics, Chemistry, and Biology (IFM), Linkoeping University, S-58183 Linkoeping (Sweden); Farivar, R.; Andersson, T. G. [Applied Semiconductor Physics, Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-41296 Goeteborg (Sweden)

2011-12-23T23:59:59.000Z

135

II5, Electrical Tuning of InGaN Quantum Dots in GaN Photonic ...  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, 2011 Electronic Materials Conference. Symposium, 2011 Electronic Materials Conference. Presentation Title, II5, Electrical Tuning ...

136

Searching for room temperature ferromagnetism in transition metal implanted ZnO and GaN  

Science Conference Proceedings (OSTI)

Significant progress in the field of wide-gap dilute magnetic semiconductors (DMS) depends on the discovery of a material system which not only shows high-temperature ferromagnetism but is also simple to prepare and thus easy to reproduce. In this context

L. M. C. Pereira; J. P. Araújo; U. Wahl; S. Decoster; M. J. Van Bael; K. Temst; A. Vantomme

2013-01-01T23:59:59.000Z

137

Holographic Optical Disc Gan Zhou, Xin An, Allen Pu, Demetri Psaltis, and Fai Mok  

E-Print Network (OSTI)

in turbine applica- tions has a radial compressor/ pump having radially disposed spaced apart fins forming fluid from the radial compressor/pump flows. The rotor can, in some applications, be used to produce) An Antibody Recognizing Sulfation as a Post-translational Modification Bradley, Johnathan (CCS) Storage

Psaltis, Demetri

138

Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction  

E-Print Network (OSTI)

have emerged as a reference blue-green solid-state light source. As for any light emitting diode LED

Recanati, Catherine

139

HH4, Comparison of Ga-Polar and N-Polar GaN by KOH ...  

Science Conference Proceedings (OSTI)

Abstract Scope, III-nitride materials have made huge progress in optical devices, such as light emitting diode (LEDs), and laser diode(LDs). Wet chemical etch ...

140

TOWARDS THE DEVELOPMENT OF DEFECT-FREE GaN SUBSTRATES ...  

Department of Materials Science and Mineral Engineering University of California at Berkeley ... known to result in considerable wafer bending currently

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs  

E-Print Network (OSTI)

The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate ...

Piner, Edwin L.

142

Electric field engineering in GaN high electron mobility transistors  

E-Print Network (OSTI)

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

143

A20: Growth of Freestanding GaN by HVPE on 3” Sapphire Substrate  

Science Conference Proceedings (OSTI)

Catalytic Properties of Ni3Al Foils for Methane Steam Reforming · Characterization of the Crystallographic Textures and Mechanical Anisotropy Factors in Two ...

144

On-wafer seamless integration of GaN and Si (100) electronics  

E-Print Network (OSTI)

The high thermal stability of nitride semiconductors allows for the on-wafer integration of (001)Si CMOS electronics and electronic devices based on these semiconductors. This paper describes the technology developed at ...

Chung, Jinwook

145

Effect of charged dislocation walls on mobility in GaN epitaxial layers  

Science Conference Proceedings (OSTI)

A theoretical model in the context of a conventional representation on traditional notion concerning Read cylinders for interpretation of mobility collapse as a function of the concentration of free carriers in GaN-based films is suggested. Along with phonon and impurity scattering mechanisms, electron scattering due to charged dislocations embedded into the walls is taken into account in the model. An expression is obtained for the height of the drift barrier depending on the concentration of free carriers. Based on the derived equations, the dependence of the location of the mobility minimum on the dislocation structure is interpreted.

Krasavin, S. E., E-mail: krasavin@theor.jinr.ru [Joint Institute for Nuclear Research (Russian Federation)

2012-05-15T23:59:59.000Z

146

JJ3, Anisotropic Carrier Mobility in GaN Quantum Well  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters · Hide details for [

147

Y5, Electrochemical Etching of GaN and Its Applications  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters · Hide details for [

148

Collapse for Higher Gate Voltages in N-Polar GaN  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters · Hide details for [

149

N7, Olefin Metathesis Reaction on GaN (0001) Surfaces  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters · Hide details for [

150

Superstructure of self-aligned hexagonal GaN nanorods formed on nitrided Si(111) surface  

SciTech Connect

We present here the spontaneous formation of catalyst-free, self-aligned crystalline (wurtzite) nanorods on Si(111) surfaces modified by surface nitridation. Nanorods grown by molecular beam epitaxy on bare Si(111) and non-stoichiometric silicon nitride interface are found to be single crystalline but disoriented. Those grown on single crystalline Si{sub 3}N{sub 4} intermediate layer are highly dense c-oriented hexagonal shaped nanorods. The morphology and the self-assembly of the nanorods shows an ordered epitaxial hexagonal superstructure, suggesting that they are nucleated at screw dislocations at the interface and grow spirally in the c-direction. The aligned nanorod assembly shows high-quality structural and optical emission properties.

Kumar, Praveen; Tuteja, Mohit; Kesaria, Manoj; Waghmare, U. V.; Shivaprasad, S. M. [Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560 064 (India)

2012-09-24T23:59:59.000Z

151

Of airports and architecture : exercises in public form  

E-Print Network (OSTI)

Airports as an architectural and urban typology typically lack physical and spatial integration with their urban context. Contrary to the city, airports have evolved into semi-autonomous spaces and products of political ...

Fouad, Daniel James

2006-01-01T23:59:59.000Z

152

Market-based airport demand management : theory, model and applications  

E-Print Network (OSTI)

The ever-increasing demand for access to the world's major commercial airports combined with capacity constraints at many of these airports have led to increasing air traffic congestion. In particular, the scarcity of ...

Fan, Terence P

2004-01-01T23:59:59.000Z

153

Alternative Fuels Data Center: Airport Zero Emission Vehicle (ZEV) and  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

Airport Zero Emission Airport Zero Emission Vehicle (ZEV) and Infrastructure Incentives to someone by E-mail Share Alternative Fuels Data Center: Airport Zero Emission Vehicle (ZEV) and Infrastructure Incentives on Facebook Tweet about Alternative Fuels Data Center: Airport Zero Emission Vehicle (ZEV) and Infrastructure Incentives on Twitter Bookmark Alternative Fuels Data Center: Airport Zero Emission Vehicle (ZEV) and Infrastructure Incentives on Google Bookmark Alternative Fuels Data Center: Airport Zero Emission Vehicle (ZEV) and Infrastructure Incentives on Delicious Rank Alternative Fuels Data Center: Airport Zero Emission Vehicle (ZEV) and Infrastructure Incentives on Digg Find More places to share Alternative Fuels Data Center: Airport Zero Emission Vehicle (ZEV) and Infrastructure Incentives on AddThis.com...

154

Airport quotas and peak hour pricing : theory and practice  

E-Print Network (OSTI)

This report examines the leading theoretical studies not only of airport peak-hour pricing but also of the congestion costs associated with airport delays and presents a consistent formulation of both. The report also ...

Odoni, Amedeo R.

1976-01-01T23:59:59.000Z

155

Analysis of aircraft surface motion at Boston Logan International Airport  

E-Print Network (OSTI)

The purpose of this thesis is to examine the nature of aircraft surface motion on the airport surface during normal operations. Twelve hours of radar data, gathered by MIT Lincoln Laboratories from Logan airport in Boston, ...

Alhanatis, Robert Elias

156

Value of Options in Airport Expansion - Example of AICM  

E-Print Network (OSTI)

Investments decisions for airport capacity expansion are usually taken, either when demand exceeds the current capacity and the airport is working under congestion, or when current demand is expected to overcome current ...

Morgado, Frederico

157

Northern New Mexico regional airport market feasibility  

SciTech Connect

This report is about the market for airline travel in northern New Mexico. Interest in developing a northern New Mexico regional airport has periodically surfaced for a number of years. The New Mexico State Legislature passed a memorial during the 1998 Second Session calling for the conduct of a study to determine the feasibility of building a new regional airport in NNM. This report is a study of the passenger market feasibility of such an airport. In addition to commercial passenger market feasibility, there are other feasibility issues dealing with siting, environmental impact, noise, economic impact, intermodal transportation integration, region-wide transportation services, airport engineering requirements, and others. These other feasibility issues are not analyzed in any depth in this report although none were discovered to be show-stoppers as a by-product of the authors doing research on the passenger market itself. Preceding the need for a detailed study of these other issues is the determination of the basic market need for an airport with regular commercial airline service in the first place. This report is restricted to an in-depth look at the market for commercial passenger air service in NNM. 20 figs., 8 tabs.

Drake, R.H.; Williams, D.S.

1998-06-01T23:59:59.000Z

158

Airport Advisory Council: March 19, 2007 Meeting Proceedings  

Science Conference Proceedings (OSTI)

This report contains the minutes for the meeting of the Airport Advisory Council, held March 19, 2007 in Orlando, Florida.

2007-10-09T23:59:59.000Z

159

"Multi-use" airport design : a new terminal for Malpensa International Airport, Milan, Italy  

E-Print Network (OSTI)

The design of an airport terminal building can be viewed as a specialized case of the design of a large building. One of the major planning and design issues of typical large buildings is that of accommodating multiple ...

Seremetis, Constantine M

1986-01-01T23:59:59.000Z

160

DOE - Office of Legacy Management -- St Louis Airport - MO 01  

Office of Legacy Management (LM)

Airport - MO 01 Airport - MO 01 FUSRAP Considered Sites St. Louis Airport, MO Alternate Name(s): Airport Site St. Louis Airport Storage Site (SLAPS) Former Robertson Storage Area Robertson Airport MO.01-1 MO.01-2 Location: Brown Road, Robertson, Missouri MO.01-2 Historical Operations: Stored uranium process residues containing uranium, radium, and thorium for the MED and AEC. MO.01-2 MO.01-3 MO.01-4 Eligibility Determination: Eligible MO.01-1 MO.01-7 Radiological Survey(s): Assessment Surveys MO.01-4 MO.01-5 Site Status: Cleanup in progress by U.S. Army Corps of Engineers. MO.01-6 USACE Website Long-term Care Requirements: To be determined upon completion. Also see Documents Related to St. Louis Airport, MO MO.01-1 - DOE Memorandum; Coffman to LaGrone; Subject: Authorization

First Page Previous Page 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page
Index
Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
161

Airport Gate Scheduling with Time Windows  

Science Conference Proceedings (OSTI)

In contrast to the existing airport gate assignment studies where flight have fixed schedules, we consider the more realistic situation where flight arrival and departure times can change. Although we minimize walking distances (or travel time) in our ... Keywords: aircraft gate scheduling, memetic algorithm, tabu search

A. Lim; B. Rodrigues; Y. Zhu

2005-09-01T23:59:59.000Z

162

New San Antonio Airport Terminal Generating Clean Power | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

San Antonio Airport Terminal Generating Clean Power San Antonio Airport Terminal Generating Clean Power New San Antonio Airport Terminal Generating Clean Power January 27, 2011 - 2:03pm Addthis The new photovoltaic system at the San Antonio International Airport. The new photovoltaic system at the San Antonio International Airport. Todd G. Allen Project Officer, Golden Field Office What are the key facts? The City of San Antonio's EECBG proram staff awarded a block grant for a solar photovoltaic (PV) system at the airport, designed and built the project, and complied with all local and federal regulations... all in seven months. In early 2010, the City of San Antonio's Energy Efficiency and Conservation Block Grant (EECBG) program staff quickly realized a golden opportunity lay right at their fingertips. The opening of the new San

163

Alternative Fuels Data Center: Incentive for Airport Alternative Fuels Use  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

Laws & Incentives Laws & Incentives Printable Version Share this resource Send a link to Alternative Fuels Data Center: Incentive for Airport Alternative Fuels Use - Salt Lake City, UT to someone by E-mail Share Alternative Fuels Data Center: Incentive for Airport Alternative Fuels Use - Salt Lake City, UT on Facebook Tweet about Alternative Fuels Data Center: Incentive for Airport Alternative Fuels Use - Salt Lake City, UT on Twitter Bookmark Alternative Fuels Data Center: Incentive for Airport Alternative Fuels Use - Salt Lake City, UT on Google Bookmark Alternative Fuels Data Center: Incentive for Airport Alternative Fuels Use - Salt Lake City, UT on Delicious Rank Alternative Fuels Data Center: Incentive for Airport Alternative Fuels Use - Salt Lake City, UT on Digg

164

Planning level decision support for the selection of robust configurations of airport passenger buildings  

E-Print Network (OSTI)

Prevalent in the current practice of airport design is the view of the airport as a "terminal", or beginning and ending point only of a traveler's journey. Such a perspective wrongly encourages the belief that airport ...

Svrcek, Tom

1994-01-01T23:59:59.000Z

165

Airport Safety: A Case Study for Infrastructure Security  

Science Conference Proceedings (OSTI)

The current implementation of do-not-fly lists and the use of documents to authenticate passenger identity won't necessarily improve airport security.

M. E. Kabay

2004-10-01T23:59:59.000Z

166

DOE - Office of Legacy Management -- St Louis Airport Site Vicinity...  

Office of Legacy Management (LM)

Corps of Engineers (Corps) in accordance with the Energy and Water Development Appropriations Act for FY 1998. Also see Documents Related to St. Louis Airport Site Vicinity...

167

Airport Viz - A 3D Tool to Enhance Security Operations | ornl...  

NLE Websites -- All DOE Office Websites (Extended Search)

Home | Science & Discovery | Supercomputing and Computation | Projects SHARE Airport Viz - A 3D Tool to Enhance Security Operations June 12, 2013 Problem Statement: Airport...

168

Ontology enabled decision support system for emergency management at airports  

Science Conference Proceedings (OSTI)

This paper presents the first prototype of the EMILI-SITE system that will provide an advanced simulation and training capabilities for emergency management in critical infrastructures like airports, railway/metro systems, and power grids. In addition, ... Keywords: SCADA, airport, complex event processing, emergency management, event-condition-action rules, ontologies, simulation, training

Vuk Mijovi?; Nikola Tomaševi?; Valentina Janev; Mladen Stanojevi?; Sanja Vraneš

2011-09-01T23:59:59.000Z

169

DOE - Office of Legacy Management -- St Louis Airport Site Vicinity  

Office of Legacy Management (LM)

St Louis Airport Site Vicinity St Louis Airport Site Vicinity Properties - 017 FUSRAP Considered Sites Site: St. Louis Airport Site Vicinity Properties (017) Designated Name: Alternate Name: Location: Evaluation Year: Site Operations: Site Disposition: Radioactive Materials Handled: Primary Radioactive Materials Handled: Radiological Survey(s): Site Status: These properties are located in Hazelwood and Berkeley, Missouri, approximately 15 miles northwest of downtown St. Louis. The properties are associated with the St. Louis Airport Site. The Manhattan Engineer District (MED), a predecessor agency of the U.S. Department of Energy (DOE), acquired the St. Louis Airport Site in 1946. The site was operated by the MED and the Atomic Energy Commission (the successor agency to the MED and a

170

An airport emergency is any occasion, natural or man-made, that threatens lives,  

E-Print Network (OSTI)

An airport emergency is any occasion, natural or man-made, that threatens lives, property, or public health in and around the airport. An emergency situation could result from an aircraft incident, every airport should develop and maintain an airport emergency plan (AEP) that covers responsibilities

Minnesota, University of

171

Multi-modal Transportation > Highway Transportation > Trucking > Railroad transportation > Public transit > Rural transportation > Rural transit > Freight pipeline transportation > Airport planning and development > Airport maintenance > Bicycle and pedes  

E-Print Network (OSTI)

Multi-modal Transportation > Highway Transportation > Trucking > Railroad transportation > Public transit > Rural transportation > Rural transit > Freight pipeline transportation > Airport planning and development > Airport maintenance > Bicycle and pedestrian > Ports and waterways >>> Transportation operat

172

ARM - Facility News Article  

NLE Websites -- All DOE Office Websites (Extended Search)

Facility News Data Collection from Mobile Facility on Gan Island Suspended Local weather balloon launch volunteers pose with the AMF team on Gan Island after completing their...

173

ARM Publications Database  

NLE Websites -- All DOE Office Websites (Extended Search)

Sites: ARM Instruments: Data Products: AMF - Black Forest, Germany (FKB) AMF - Cape Cod, Massachusetts (PVC) AMF - Gan Island, Maldives (GAN) AMF - Ganges Valley, India (PGH)...

174

Tonopah Airport Solar Power Plant | Open Energy Information  

Open Energy Info (EERE)

Tonopah Airport Solar Power Plant Tonopah Airport Solar Power Plant Jump to: navigation, search Name Tonopah Airport Solar Power Plant Facility Tonopah Airport Solar Sector Solar Facility Type Concentrating Solar Power Developer Solar Millenium, LLC Location Nye County, Nevada Coordinates 38.5807111°, -116.0413889° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":38.5807111,"lon":-116.0413889,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

175

Hydrogen Production and Dispensing Facility Opens at W. Va. Airport |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Hydrogen Production and Dispensing Facility Opens at W. Va. Airport Hydrogen Production and Dispensing Facility Opens at W. Va. Airport Hydrogen Production and Dispensing Facility Opens at W. Va. Airport August 19, 2009 - 1:00pm Addthis Major General Allen Tackett of the National Guard's 130th Airlift Wing dispenses the first fill-up of hydrogen fuel from the Yeager facility. Major General Allen Tackett of the National Guard's 130th Airlift Wing dispenses the first fill-up of hydrogen fuel from the Yeager facility. Washington, D.C. -- A hydrogen production and dispensing station constructed and operated with support from the Office of Fossil Energy's National Energy Technology Laboratory (NETL) was officially opened Monday at the Yeager Airport in Charleston, W.Va. The facility is an example of how domestically produced fuels may be used to power a variety of vehicles

176

Prescott Airport Solar Plant Solar Power Plant | Open Energy Information  

Open Energy Info (EERE)

Prescott Airport Solar Plant Solar Power Plant Prescott Airport Solar Plant Solar Power Plant Jump to: navigation, search Name Prescott Airport Solar Plant Solar Power Plant Facility Prescott Airport Solar Plant Sector Solar Facility Type Photovoltaic Developer APS Location Prescott, Arizona Coordinates 34.5400242°, -112.4685025° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":34.5400242,"lon":-112.4685025,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

177

Boundary Layer Oscillations from Thunderstorms at Sydney Airport  

Science Conference Proceedings (OSTI)

Analyses of wind velocity and air pressure data, acquired by a set of low-level anemometers at Sydney Airport, Australia, indicate the passage of a set of three remarkably smooth atmospheric boundary layer oscillations that traveled ahead of a ...

Richard Manasseh; Jason H. Middleton

1995-04-01T23:59:59.000Z

178

Simulation and Visualization of Airside Operations at Detroit Metropolitan Airport  

E-Print Network (OSTI)

In recent years, airline flight delays have been among the most troublesome problems in the national transportation system. Although bad weather has historically been the main cause of delays, a growing reason has been the inability of the nation’s air transport system to efficiently absorb all of the aircraft trying to use limited airspace or trying to take off or land at busy airports. Simulation modeling and visualization can be of substantial help in the efficient design of airport operations, which in turn can mitigate some of the abovementioned capacity problems. This study presents the simulation model and 3D animation of the airside airport operations at Detroit Metro Airport, Romulus, Michigan. The simulation model is developed in STROBOSCOPE (Martinez 1996) and the 3D animation is created using

Copyright Hiam; M. Khoury; Vineet R. Kamat; Vineet R. Kamat; Photios G. Ioannou; Photios G. Ioannou; Hiam M. Khoury; Hiam M. Khoury

2005-01-01T23:59:59.000Z

179

Big Flats Airport, New York: Energy Resources | Open Energy Informatio...  

Open Energy Info (EERE)

Bureau 2005 Place to 2006 CBSA Retrieved from "http:en.openei.orgwindex.php?titleBigFlatsAirport,NewYork&oldid227755" Categories: Places Stubs Cities What links here...

180

Meteorological and Air Pollution Modeling for an Urban Airport  

Science Conference Proceedings (OSTI)

Preliminary results are presented for numerical experiments modeling meteorology, multiple pollutant sources and nonlinear photochemical reactions for the case of an airport in a large urban area with complex terrain. The meteorological model ...

Paul R. Swan; In Young Lee

1980-05-01T23:59:59.000Z

Index
Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
181

Modeling and control of airport departure processes for emissions reduction  

E-Print Network (OSTI)

Taxiing aircraft contribute significantly to the fuel burn and emissions at airports. This thesis investigates the possibility of reducing fuel burn and emissions from surface operations through a reduction of the taxi ...

Simaiakis, Ioannis

2009-01-01T23:59:59.000Z

182

Analysis, modeling and control of the airport departure process  

E-Print Network (OSTI)

Increased air traffic demand over the past two decades has resulted in significant increases in surface congestion at major airports in the United States. The overall objective of this thesis is to mitigate the adverse ...

Simaiakis, Ioannis

2013-01-01T23:59:59.000Z

183

Comparing capacities and delays at major European and American airports  

E-Print Network (OSTI)

Successful air transport systems must satisfy the demand for flights while maintaining a high level of service and safety. For airports, which have limited capacities, policy-makers must compromise between maximizing the ...

Morisset, Thomas (Thomas Marc)

2010-01-01T23:59:59.000Z

184

Transfer passenger needs at airports : human factors in terminal design  

E-Print Network (OSTI)

This thesis analyzes the needs of particular users of airport: transfer passengers. The object of this work has been to produce a set of design guidelines for terminals. these guidelines are framed upon a user-need survey ...

Brillembourg, Marie-Claire

1982-01-01T23:59:59.000Z

185

Downtime interventions : programming the next generation airport terminal  

E-Print Network (OSTI)

Airports are in trouble. Passengers have always been frustrated with air travel because of poor scheduling and late aircraft, and threats of terrorism since September 11 th 2001 have given travelers even less of a reason ...

Hoang, Samuel, 1977-

2002-01-01T23:59:59.000Z

186

Continuous Commissioning® of the Dallas/Fort Worth International Airport  

E-Print Network (OSTI)

The DFW International Airport is one of the largest and busiest airports in the world. Located in North Texas, squarely between the cities of Dallas and Fort Worth, the DFW Airport not only serves a huge population in the North Texas area for domestic flights but also is a major airport for international flights. The Energy and Transportation Management (ETM) Department, at the Airport, is responsible for reducing energy within their facilities, and they are very aggressive in energy management. In recent years they have renovated or replaced much of the equipment in their central utilities plant and added a huge 90,000 ton-hr (316.5 MWh) chilled water thermal storage system. The electric bills, for the accounts managed by ETM, was $29 million (€20 million) in 2007. Although the ETM staff had initiated many energy efficiency measures, they felt that the energy consuming systems could be optimized to realize additional energy and cost savings. The Energy Systems Laboratory was hired to apply the Continuous Commissioning® (CC®) process at the airport. Five projects have been identified to date including: 1. An energy audit and assessment of Terminal B and a lighting demonstration pilot project. 2. CC of the Consolidated Rent-A-Car Center. 3. CC of the Airport Administration Building. 4. CC of the new International Terminal D (on-going). 5. CC of the Utilities Plant, Energy Plaza (on-going). This paper will focus on the completed projects: the Consolidated Rent-A-Car Center, the Airport Administration Building, and the major on-going projects, CC of Terminal D and Energy Plaza.

Yazdani, B.; Schroeder, F.; Kramer, L.; Baltazar, J. C.; Turner, W. D.; Wei, G.; Deng, S.; Henson, R.; Dennis, J. R.; T., R.

2008-10-01T23:59:59.000Z

187

Plasma Enhanced ALD of High-k Dielectrics on GaN and AlGaN  

Science Conference Proceedings (OSTI)

Recent efforts to improve performance of high power devices have focused on the ... Characterization of Degradation for MLCC under Thermal and Electrical ...

188

Behavior of W and WSi(x) Contact Metallization on n- and p- Type GaN  

SciTech Connect

Sputter-deposited W-based contacts on p-GaN (N{sub A} {approximately} 10{sup 18} cm{sup {minus}3}) display non-ohmic behavior independent of annealing temperature when measured at 25 C. The transition to ohmic behavior occurs above {approximately} 250 C as more of the acceptors become ionized. The optimum annealing temperature is {approximately} 700 C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700 C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to {approximately} 900 C.

Abernathy, C.R.; Cao, X.A.; Cole, M.W.; Eizenberg, M.; Lothian, J.R.; Pearton, S.J.; Ren, F.; Shul, R.J.; Zeitouny, A.; Zolper, J.C.

1999-01-05T23:59:59.000Z

189

Development of a Bulk GaN Growth Technique for Low Defect Density, Large-Area Native Substrates  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Next-Generation Power Electronics: Next-Generation Power Electronics: Electrochemical Solution Growth (ESG) Technique for Bulk Gallium Nitride Substrates Karen Waldrip Dept. 2546, Advanced Power Sources R&D Sandia National Labs, Albuquerque, NM knwaldr@sandia.gov, (505) 844-1619 Acknowledgements: Mike Soboroff, Stan Atcitty, Nancy Clark, and John Boyes David Ingersoll, Frank Delnick, and Travis Anderson 2010 DOE Peer Review, Nov. 2-4, Washington, DC Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. Funded by the Energy Storage Systems Program of the U.S. Department Of Energy through Sandia National Laboratories Project Objective

190

Yu Gan, Godfrey Miller, Carl Boettiger 1.1.ReachReach SuperfluidSuperfluid StateState  

E-Print Network (OSTI)

Design plate 2.2.Run wires through brassRun wires through brass connectors and fill connectors withconnectors

191

P2.13 Characterization of a-Plane GaN Layers Grown on Patterned r ...  

Science Conference Proceedings (OSTI)

... attracted significant attention for optoelectronic device applications covering .... Growth of Ingaas on Si(111) with Reduced Size of Selective Growth Window.

192

Thermodynamics and Enzymatic Polymerization of Artificial Metallo-Nucleic Acids AND Investigation of Duplex Formation between GAN and RNA  

E-Print Network (OSTI)

nanodevices. Angewandte Chemie- International Edition 2003,artificial DNA. Angewandte Chemie-International Editionpair for DNA. Angewandte Chemie-International Edition 2005,

Kim, Eun Kyong

2011-01-01T23:59:59.000Z

193

Thermodynamics and Enzymatic Polymerization of Artificial Metallo-Nucleic Acids AND Investigation of Duplex Formation between GAN and RNA  

E-Print Network (OSTI)

of RNA on GNA Templates and Thermodynamics of Inosine GNA I.132 III. Thermodynamics of InosineOF CALIFORNIA RIVERSIDE Thermodynamics and Enzymatic

Kim, Eun Kyong

2011-01-01T23:59:59.000Z

194

II3, 2?m Thick Device Quality GaN on Si(111) Using AlGaN Graded ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

195

Analisi dei processi di ricombinazione in diodi LED basati su GaN: caratterizzazione ottica e misure DLTS.  

E-Print Network (OSTI)

??In questo lavoro vengono analizzati i processi di ricombinazione nei diodi LED basati su GaN/InGaN mediante caratterizzazione ottica dei dispositivi e misure DLTS. In particolare… (more)

La Grassa, Marco

2013-01-01T23:59:59.000Z

196

Highly mismatched crystalline and amorphous GaN(1-x)As(x) alloys in the whole composition range  

E-Print Network (OSTI)

material system has many unique features in the electronic band structure that make it a good candidate for photovolatic

Yu, K. M.

2010-01-01T23:59:59.000Z

197

Highly mismatched crystalline and amorphous GaN(1-x)As(x) alloys in the whole composition range  

E-Print Network (OSTI)

fraction of the solar spectrum, and band edges straddlingperfect fit to the solar spectrum offering the opportunity

Yu, K. M.

2010-01-01T23:59:59.000Z

198

Alternative Fuels Data Center: St. Louis Airport Relies on Biodiesel and  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

St. Louis Airport St. Louis Airport Relies on Biodiesel and Natural Gas Vehicles to someone by E-mail Share Alternative Fuels Data Center: St. Louis Airport Relies on Biodiesel and Natural Gas Vehicles on Facebook Tweet about Alternative Fuels Data Center: St. Louis Airport Relies on Biodiesel and Natural Gas Vehicles on Twitter Bookmark Alternative Fuels Data Center: St. Louis Airport Relies on Biodiesel and Natural Gas Vehicles on Google Bookmark Alternative Fuels Data Center: St. Louis Airport Relies on Biodiesel and Natural Gas Vehicles on Delicious Rank Alternative Fuels Data Center: St. Louis Airport Relies on Biodiesel and Natural Gas Vehicles on Digg Find More places to share Alternative Fuels Data Center: St. Louis Airport Relies on Biodiesel and Natural Gas Vehicles on AddThis.com...

199

Alternative Fuels Data Center: North Carolina Airport Advances With Plug-In  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

North Carolina Airport North Carolina Airport Advances With Plug-In Electric Buses to someone by E-mail Share Alternative Fuels Data Center: North Carolina Airport Advances With Plug-In Electric Buses on Facebook Tweet about Alternative Fuels Data Center: North Carolina Airport Advances With Plug-In Electric Buses on Twitter Bookmark Alternative Fuels Data Center: North Carolina Airport Advances With Plug-In Electric Buses on Google Bookmark Alternative Fuels Data Center: North Carolina Airport Advances With Plug-In Electric Buses on Delicious Rank Alternative Fuels Data Center: North Carolina Airport Advances With Plug-In Electric Buses on Digg Find More places to share Alternative Fuels Data Center: North Carolina Airport Advances With Plug-In Electric Buses on AddThis.com...

200

A stochastic and dynamic model of delay propagation within an airport network for policy analysis  

E-Print Network (OSTI)

As demand for air travel increases over the years and many busy airports operate close to their capacity limits, congestion at some airports on any given day can quickly spread throughout the National Aviation System (NAS). ...

Pyrgiotis, Nikolaos

2012-01-01T23:59:59.000Z

Index
Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
201

Time dependent estimates of delays and delay costs at major airports  

E-Print Network (OSTI)

Two queuing models appropriate for estimating time dependent delays and delay costs at major airports are reviewed. The models use the demand and capacity profiles at any given airport as well as the number of runways there ...

Hengsbach, Gerd

1975-01-01T23:59:59.000Z

202

A queuing model of airport congestion and policy implications at JFK and EWR  

E-Print Network (OSTI)

Since the phasing-out of the High Density Rule, access to major commercial airports in the United States has been unconstrained or, in the case of the airports of New York, weakly constrained. This largely unregulated ...

Jacquillat, Alexandre

2012-01-01T23:59:59.000Z

203

Mesoscale Weather and Aviation Safety: The Case of Denver International Airport  

Science Conference Proceedings (OSTI)

The new Denver International Airport will be the first new major commercial airport to be built in the United States in 20 years. Concern has been expressed about the meteorology at the new airport site and its potential impact on aviation ...

Steven L. Rhodes

1992-04-01T23:59:59.000Z

204

A publication of the Airport Technical Assistance Program of the Center for Transportation Studies at the University of Minnesota Purchasing equipment for your airport can  

E-Print Network (OSTI)

at the University of Minnesota Purchasing equipment for your airport can be an easy process with the help of your Mn and future needs, research equipment types and manufacturers, get several price estimates, justify the need for the equip- ment, provide background information to your airport sponsor, and verify that the costs

Minnesota, University of

205

ARM - Feature Stories and Releases Article  

NLE Websites -- All DOE Office Websites (Extended Search)

, 2011 [Feature Stories and Releases] , 2011 [Feature Stories and Releases] AMIE, What You Wanna Do? Bookmark and Share Data spanning the Maldives to Papua New Guinea will help scientists analyze far-reaching tropical weather cycle This view shows a subset of the ARM Mobile Facility instruments operating at the Gan Island airport for the AMIE campaign. To see the complete collection, see the image set in Flickr. This view shows a subset of the ARM Mobile Facility instruments operating at the Gan Island airport for the AMIE campaign. To see the complete collection, see the image set in Flickr. Like the lyrics in the song from the 1970s, the ARM Mobile Facility is going to stay in the Maldives "for a while, maybe longer"-about six months, actually-in support of the ARM Madden Julian Oscillation (MJO)

206

DOE to Build Hydrogen Fuel Test Facility at West Virginia Airport |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

DOE to Build Hydrogen Fuel Test Facility at West Virginia Airport DOE to Build Hydrogen Fuel Test Facility at West Virginia Airport DOE to Build Hydrogen Fuel Test Facility at West Virginia Airport March 25, 2009 - 1:00pm Addthis Washington, DC - The Office of Fossil Energy's National Energy Technology Laboratory (NETL) today announced plans to construct and operate a hydrogen fuel production plant and vehicle fueling station at the Yeager Airport in Charleston, W.Va. The facility will use grid electricity to split water to produce pure hydrogen fuel. The fuel will be used by the airport's operations and the 130th Air Wing of the West Virginia Air National Guard. NETL will begin operations at the Yeager Airport facility in August 2009 and plans to conduct two years of testing and evaluation. The facility will be designed using "open architecture," allowing the capability to add

207

Airports Soar to New Heights with Alternative Fuels | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Airports Soar to New Heights with Alternative Fuels Airports Soar to New Heights with Alternative Fuels Airports Soar to New Heights with Alternative Fuels February 22, 2011 - 2:27pm Addthis Shannon Brescher Shea Communications Manager, Clean Cities Program A recent flight to a conference inspired me to think about the impact of airports on our environment and society. Although modern planes have made it safe and fun to travel around the world, they use a vast amount of fuel. The petroleum used by the array of behind-the-scenes equipment, from shuttle buses to luggage carriers, adds up as well. Although Clean Cities doesn't address planes, our 87 local coalitions have helped airports limit their petroleum use in other ways, reducing their smog-forming and greenhouse gas emissions. A number of airports have adopted the use of alternative fuels and advanced

208

Airports Soar to New Heights with Alternative Fuels | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Airports Soar to New Heights with Alternative Fuels Airports Soar to New Heights with Alternative Fuels Airports Soar to New Heights with Alternative Fuels February 22, 2011 - 2:27pm Addthis Shannon Brescher Shea Communications Manager, Clean Cities Program A recent flight to a conference inspired me to think about the impact of airports on our environment and society. Although modern planes have made it safe and fun to travel around the world, they use a vast amount of fuel. The petroleum used by the array of behind-the-scenes equipment, from shuttle buses to luggage carriers, adds up as well. Although Clean Cities doesn't address planes, our 87 local coalitions have helped airports limit their petroleum use in other ways, reducing their smog-forming and greenhouse gas emissions. A number of airports have adopted the use of alternative fuels and advanced

209

The economic and environmental potential of electric cars within the Amsterdam Airport Corridor.  

E-Print Network (OSTI)

??Electric cars currently receive much attention. Schiphol Group considers the uptake of electric cars an interesting solution to decrease transport related emissions around the airport.… (more)

Nobel, N.C.X.

2011-01-01T23:59:59.000Z

210

Contributions from a Local Ensemble Prediction System (LEPS) for Improving Fog and Low Cloud Forecasts at Airports  

Science Conference Proceedings (OSTI)

At Paris’ international airport, named Roissy Charles de Gaulle (CdG), air traffic safety and management as well as economic issues related to poor visibility conditions are crucial. Meteorologists face the challenge of supplying airport ...

Stevie Roquelaure; Thierry Bergot

2009-02-01T23:59:59.000Z

211

Ground access to major airports in the United States : summary of present characteristics and evaluation of future requirements  

E-Print Network (OSTI)

Synopsis: The ground access problem at United States airports will be discussed in general terms. Those characteristics of airport users relative to ground transportation will be analyzed to provide a clear picture of the ...

Munds, Allan J.

1969-01-01T23:59:59.000Z

212

Benchmarking european airports based on a profitability envelope: a break-even analysis  

Science Conference Proceedings (OSTI)

In this paper a simplified benchmarking methodology is presented. This new approach is based on the computation of a discrete envelope over distributed data points. Financial and operational data from 139 European airports in 10 countries was collected ... Keywords: airport benchmarking, break-even analysis, profit maximization

Branko Bubalo

2012-09-01T23:59:59.000Z

213

Monitoring of the Airport Calibration Pads at Walker Field, Grand Junction,  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Monitoring of the Airport Calibration Pads at Walker Field, Grand Monitoring of the Airport Calibration Pads at Walker Field, Grand Junction, Colorado, for Long-Term Radiation Variations (August 1978) Monitoring of the Airport Calibration Pads at Walker Field, Grand Junction, Colorado, for Long-Term Radiation Variations (August 1978) Monitoring of the Airport Calibration Pads at Walker Field, Grand Junction, Colorado, for Long-Term Radiation Variations (August 1978) Monitoring of the Airport Calibration Pads at Walker Field, Grand Junction, Colorado, for Long-Term Radiation Variations (August 1978) More Documents & Publications Field Calibration Facilities for Environmental Measurement of Radium, Thorium, and Potassium (October 2013) Long-Term Surveillance Operations and Maintenance Fiscal Year 2013 Year-End Summary Report

214

Community response to noise from a general aviation airport  

SciTech Connect

The paper provides relationships between noise level and response variables through an analysis of social survey and physical data collected around a small general aviation airport. The responses investigated included annoyance, activity interference, health effects, and non-noise effects of general aviation traffic, such as fear of crashes, air pollution, aircraft lights, house vibration, and television interference. Results indicate a much higher response than that predicted by Schultz (1978), e.g., at 30 NEF, Schultz predicts approximately 15% highly annoyed, compared with 28% in this study.

Birnie, S.E.; Hall, F.L.; Taylor, S.M.

1980-07-01T23:59:59.000Z

215

A major cogeneration system goes in at JFK International Airport. Low-visibility privatization in a high-impact environment  

Science Conference Proceedings (OSTI)

This article describes the first major privatization effort to be completed at John F. Kennedy International Airport. The airport owner and operator, the Port Authority of New York and New Jersey, decided to seek private sector involvement in a capital-intensive project to expand and upgrade the airport`s heating and air conditioning facilities and construct a new cogeneration plant. Kennedy International Airport Cogeneration (KIAC) Partners, a partnership between Gas Energy Incorporated of New York and Community Energy Alternatives of New Jersey, was selected to develop an energy center to supply electricity and hot and chilled water to meet the airport`s growing energy demand. Construction of a 110 MW cogeneration plant, 7,000 tons of chilled water equipment, and 30,000 feet of hot water delivery piping started immediately. JFK Airport`s critical international position called for this substantial project to be developed almost invisibly; no interruption in heating and air conditioning service and no interference in the airport`s active operations could be tolerated. Commercial operation was achieved in February 1995.

Leibler, J. [Port Authority of New York and New Jersey, New York, NY (United States); Luxton, R. [Kennedy International Airport Cogeneration Partners, Jamaica, NY (United States); Ostberg, P. [CEA Kennedy Operators, Inc., Jamaica, NY (United States)

1998-04-01T23:59:59.000Z

216

Innovative Design Concept for the New Bangkok International Airport, NBIA  

E-Print Network (OSTI)

Thermal and visual comfort for the occupants of a room are not defined by air temperature only, but also radiation with its three components solar radiation, daylight and heat radiation has to be taken into account (among other factors such as humidity, air speed and occupant activity and clothing levels). In hot climates the optimization of room comfort is a challenging task due to the high solar radiation over the whole year. In intelligent buildings new material developments are applied optimizing the building envelope in an integral building design process. New solutions for weather, noise and heat protection are developed, where building envelope and installed mechanical equipment work together creating optimal comfort at minimum energy consumption. This approach was used in the design of the New Bangkok International Airport, NBIA to develop an optimized building concept in a design team comprising the architects, structural and mechanical engineers, HVAC, acoustic and climate engineers.

Kessling, W.; Holst, S.; Schuler, M.

2004-01-01T23:59:59.000Z

217

How to prepare an airport for the Olympic Games? : transportation of the Olympic Family Members  

E-Print Network (OSTI)

This thesis describes and assesses the preparation of Athens International Airport for and its performance during the Olympic Games in 2004. The analysis includes infrastructural modifications made and organizational ...

Kassens, Eva

2005-01-01T23:59:59.000Z

218

High-Resolution Weather Database for the Terminal Area of Frankfurt Airport  

Science Conference Proceedings (OSTI)

A 1-yr meteorological dataset for the terminal area of Frankfurt Airport in Germany has been generated with a numerical weather prediction system to provide a synthetic though realistic database for the evaluation of new operational aircraft ...

Michael Frech; Frank Holzäpfel; Arnold Tafferner; Thomas Gerz

2007-11-01T23:59:59.000Z

219

Microburst Wind Structure and Evaluation of Doppler Radar for Airport Wind Shear Detection  

Science Conference Proceedings (OSTI)

Doppler weather radar data from the Joint Airport Weather Studies (JAWS) Project are used to determine the horizontal and vertical structure of airflow within microbursts. Typically, the associated downdraft is about 1 km wide and begins to ...

James W. Wilson; Rita D. Roberts; Cathy Kessinger; John McCarthy

1984-06-01T23:59:59.000Z

220

Estimating current and future benefits of airport surface congestion management techniques  

E-Print Network (OSTI)

Air traffic is expected to continue to grow in the future and improved methods for dealing with the increased demand on the system need to be designed and implemented. One method for reducing surface congestion at airports ...

Nakahara, Alex (Alex Hiroo)

2012-01-01T23:59:59.000Z

Index
Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
221

Estimation of the economic relationship of an airport to the regional economy : a critical analysis  

E-Print Network (OSTI)

In the past decade many major U.S. airports have encountered extensive opposition to plans for future growth and expansion from environmentalists and community groups who cite the noise and air pollution created and the ...

Fortune, Stephen James

1981-01-01T23:59:59.000Z

222

Snow-Band Formation and Evolution during the 15 November 1987 Aircraft Accident at Denver Airport  

Science Conference Proceedings (OSTI)

The formation and evolution of convective rain and snow bands prior to and during the crash of Continental Airlines flight 1713 on 15 November 1987 at Denver Stapleton Airport are discussed. Convective rain occurred during the early stages of the ...

Roy M. Rasmussen; Andrew Crook; Cathy Kessinger

1993-12-01T23:59:59.000Z

223

Development of techniques for rapidly assessing the local air quality impacts of airports  

E-Print Network (OSTI)

The combustion of fossil fuels for aviation activity harms air quality and human health near airports through the production of PM2.5. Currently, dispersion models can assess these local-scale (distances ~10 km) impacts, ...

Lee, Gideon (Gideon Luther)

2012-01-01T23:59:59.000Z

224

4. Title and Subtitle Runway-area Topographic Considerations In Airport Licensing 7. Authors  

E-Print Network (OSTI)

Alabama’s general use airports were studied by traditional surveying and global positioning satellite techniques to determine if natural or manmade topographic hazards existed in their runway protection zones (RPZ). The severity of obstructions in the RPZ was rated on a scale of 1-5, with the severity increasing with number. Many of the airports surveyed have significant obstructions in their RPZ and are a hazard to approaching and departing aircraft. The results of this study point to the use of a RPZ obstruction rating as part of the Alabama Department of Transportation (ALDOT) airport design algorithm. The data generated during this project was compiled as a Technical Appendix, published in two companion reports for this project (UTCA Reports 03108-A and 03108-B). Photographs were taken of runway-end conditions during the project; these were provided to the ALDOT Aviation Bureau. 17. Key Words Runway, approach, departure, airport design, topography, Protection zones

Mr. Brian Hatcher; Mr. Todd Sullivan; Mr. Jeff Tedder; Mr. Jon Williams; Dr. Charles; D. Haynes; Mr. Brian Hatcher; Mr. Todd Sullivan; Mr. Jeff Tedder; Dr. Charles Haynes

2003-01-01T23:59:59.000Z

225

An Experiment to Measure the Value of Statistical Probability Forecasts for Airports  

Science Conference Proceedings (OSTI)

The economic value of weather forecasts for airports for commercial aviation is investigated by introducing financial data into the decision-making process for fuel carriage by aircraft. Using specific operating costs for a given flight, an ...

Ross Keith; Stephen M. Leyton

2007-08-01T23:59:59.000Z

226

Potential airport capacity gains from the optimal assignment of aircraft types to runways  

E-Print Network (OSTI)

Large commercial airports worldwide still experience demand in excess of capacity which leads to considerable delays. As an operational solution to alleviate delays, this thesis presents a model that aims at increasing ...

Kohler, Alf, 1962-

2004-01-01T23:59:59.000Z

227

Application of Artificial Neural Network Forecasts to Predict Fog at Canberra International Airport  

Science Conference Proceedings (OSTI)

The occurrence of fog can significantly impact air transport operations, and plays an important role in aviation safety. The economic value of aviation forecasts for Sydney Airport alone in 1993 was estimated at $6.8 million (Australian dollars) ...

Dustin Fabbian; Richard de Dear; Stephen Lellyett

2007-04-01T23:59:59.000Z

228

The Influence of Weather on Flight Operations at the Atlanta Hartsfield International Airport  

Science Conference Proceedings (OSTI)

The impact of various types of weather on aircraft operations for one airline for 3 yr at Atlanta Hartsfield International Airport is investigated. Impacts are expressed as delays defined in terms of the difference between the actual flight time ...

Peter J. Robinson

1989-12-01T23:59:59.000Z

229

Austin-Bergstrom International Airport Electrification: Landside Vehicle and Airside Equipment Operations  

Science Conference Proceedings (OSTI)

Air quality standards nonattainment issues have become an increasingly pressing issue for airports located in metropolitan areas. Research has shown that reduction of ground support equipment (GSE) emissions will be instrumental in meeting emissions standards and facilitating low environmental impact growth. Austin-Bergstrom International Airport (ABIA)located about eight miles southeast of downtown Austin, Texas, and supporting a narrow-body aircraft fleetprovides the perfect test venue for replacing ex...

2011-08-12T23:59:59.000Z

230

Dependence of local electronic structure in p-type GaN on crystal polarity and presence of inversion domain boundaries  

E-Print Network (OSTI)

V. Smith, E. T. Yu, J. M. Redwing, and K. S. Boutros, Appl.Miller, E. T. Yu, and J. M. Redwing, Appl. Phys. Lett. 78,

Zhou, X; Yu, E T; Green, D S; Speck, J S

2006-01-01T23:59:59.000Z

231

[1/2013] High efficiency GaN current-mode class-D amplifier at 2.6 GHz using pure differential trans-mission line filters  

E-Print Network (OSTI)

Gbit/s Veigel, T.; Hipp, T.; Grözing, M.; Berroth, M. Kleinheubacher Tagung 2010, Miltenberg, KH2010-D Technology Schmidt, M.; Veigel, T.; Haug, S.; Grözing, M.; Berroth, M. Kleinheubacher Tagung 2010, Miltenberg Wandlerraten bis 28 GS/s Grözing, M; Digel, J; Ferenci, D; Berroth, M. Kleinheubacher Tagung 2009, Miltenberg

Möbius, Bernd

232

Transmission Electron Microscopy Study of Nonpolar a-Plane GaN Grown by Pendeo-Epitaxy on (112_0) 4H-SiC  

E-Print Network (OSTI)

by Pendeo-Epitaxy on (1120) 4H-SiC. D.N. Zakharov 1 , Z.phase epitaxy on (1120) 4H-SiC substrates with AlN bufferPE layers were grown on 4H- SiC (1120) substrates previously

Zakharov, D.N.; Liliental-Weber, Z.; Wagner, B.; Reitmeier, Z.J.; Preble, E.A.; Davis, R.F.

2008-01-01T23:59:59.000Z

233

A Web-Based Platform for Experimental Investigation of Electric Power Auctions Ray D. Zimmerman Robert J. Thomas Deqiang Gan Carlos Murillo-Snchez  

E-Print Network (OSTI)

1 A Web-Based Platform for Experimental Investigation of Electric Power Auctions Ray D. Zimmerman This paper describes the architecture and uses of an Internet based software platform called PowerWeb. PowerWeb a web-based user interface. The PowerWeb environment is meant to be flexible so as to allow

234

Importance of excitonic effects and the question of internal electric fields in stacking faults and crystal phase quantum discs: The model-case of GaN  

E-Print Network (OSTI)

ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi ðze #2; zhÞ2 þ q2 q ) Uex ¼ EexUex; ð1Þ a)Electronic mail: pmc53@cam.ac.uk. 0021-8979/2012/112(5)/053512/5/$30.00 VC 2012 American Institute of Physics112, 053512-1 JOURNAL OF APPLIED PHYSICS 112, 053512 (2012) where ze, zh, and q¼qe#2;qh...

Corfdir, Pierre; Lefebvre, Pierre

2012-01-01T23:59:59.000Z

235

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates  

E-Print Network (OSTI)

5221, 34095 Montpellier, France E-mail: pmc53@cam.ac.uk Received October 12, 2012; accepted November 22, 2012; published online May 20, 2013 This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various...

Corfdir, Pierre; Dussaigne, Amélie; Teisseyre, Henryk; Suski, Tadeusz; Grzegory, Izabella; Lefebvre, Pierre; Giraud, Etienne; Shahmohammadi, Mehran; Phillips, Richard; Ganière, Jean-Daniel; Grandjean, Nicolas; Deveaud, Benoît

236

Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates  

E-Print Network (OSTI)

TCO is amor- phous indium tin oxide (ITO), most commonlythe properties of indium-doped zinc oxide layers grown byoxide, doping, n-type, MOCVD, metalorganic chemical vapor deposition, ZnO: In, indium

Ben-Yaacov, Tammy; Ive, Tommy; Walle, Chris G.; Mishra, Umesh K.; Speck, James S.; Denbaars, Steven P.

2010-01-01T23:59:59.000Z

237

Superfund Record of Decision (EPA Region 9): Tucson International Airport Area (volume 1 and 2), Tucson, AZ, September 30, 1997  

SciTech Connect

This Record of Decision (ROD) addresses the contamination at the Tucson International Airport Property (hereafter referred to as the `Airport Property`), Burr-Brown Corporation property (Burr-Brown Property) and the former West-Cap Arizona Company property (former West-Cap Property) located within the Tucson International Airport Area Superfund Site in Tucson, Arizona (TIAA Site). This ROD addresses soils and shallow groundwater contaminated with volatile organic compounds (VOCs), soil and sludges contaminated with polychlorinated biphenyls (PCBs), and closure of the Tucson Airport Authority Landfill (TAA Landfill).

NONE

1998-01-01T23:59:59.000Z

238

Review of EU airport energy interests and priorities with respect to ICT, energy efficiency and enhanced building operation  

E-Print Network (OSTI)

This paper gives an overview on EU airport energy interests and priorities with respect to ICT, energy efficiency and enhanced building operation. To achieve this objective the paper begins with an overview on airports role on energy consumption, then novel review of airport energy consumption figures and energy efficiency actions at the EU level is presented. The research covers also interest and requirements of two Italian airports (MXP and FCO) in relation to enhanced operation which include: sub-metering and visualisation needed to better understand the end energy use, data analysis for benchmarking and correlation with operational and weather data, action management for maintenance operation support.

Costa, A.; Blanes, L. M.; Donnelly, C.; Keane, M. M.

2012-01-01T23:59:59.000Z

239

Magnetic Co-doping of Niobium-doped Strontium Titanate Thin ...  

Science Conference Proceedings (OSTI)

Lighting Enhancement of GaN LEDs by Applying p-Type Ni(P):SnO2 TCO on p- GaN Epitaxial Layer · Localized Temperature Stability in Multilayer LTCC.

240

Self-biased 215MHz Magnetoelectric NEMS Resonator for Ultra ...  

Science Conference Proceedings (OSTI)

Lighting Enhancement of GaN LEDs by Applying p-Type Ni(P):SnO2 TCO on p- GaN Epitaxial Layer · Localized Temperature Stability in Multilayer LTCC.

Index
Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
241

Multifunctional Oxides  

Science Conference Proceedings (OSTI)

Lighting Enhancement of GaN LEDs by Applying p-Type Ni(P):SnO2 TCO on p- GaN Epitaxial Layer · Localized Temperature Stability in Multilayer LTCC.

242

Electronic properties of gallium nitride nanowires  

E-Print Network (OSTI)

This thesis presents a systematic study of the electrical transport in GaN nanowires. Particularly, the effect of the surrounding dielectric on the conductivity of GaN nanowires is experimentally shown for the first time. ...

Yoon, Joonah

2008-01-01T23:59:59.000Z

243

Experimental Characterization of Radiation Damage in Uranium ...  

Science Conference Proceedings (OSTI)

Mar 13, 2012 ... Program Organizers: Peng Xu, University of Wisconsin; Jian Gan, Idaho National Laboratory; Ram Devanathan , Pacific Northwest National ...

244

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 55, NO. 6, DECEMBER 2008 3633 Radiation Effects on InGaN Quantum Wells  

E-Print Network (OSTI)

GaN Quantum Wells and GaN Simultaneously Probed by Ion Beam-Induced Luminescence J. W. Tringe, Member, IEEE, A. Stevens, and C. Wetzel, Member, IEEE Abstract--InGaN quantum well structures on GaN epilayers were exposed of the epilayer and wells. Performance was estimated by the intensity of ion-beam induced luminescence. Two

Wetzel, Christian M.

245

Generation of an Eddy Dissipation Rate Map at the Hong Kong International Airport Based on Doppler Lidar Data  

Science Conference Proceedings (OSTI)

Turbulent airflow mostly occurs at Hong Kong International Airport (HKIA) when winds blow off the hills on the Lantau Island (with peaks rising to almost 1000 m to the south of the airport) from the east to the southwest. In a previous study by ...

P. W. Chan

2011-01-01T23:59:59.000Z

246

GRR/Section 13-FD-d - Airport Evaluation Process | Open Energy Information  

Open Energy Info (EERE)

3-FD-d - Airport Evaluation Process 3-FD-d - Airport Evaluation Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 13-FD-d - Airport Evaluation Process 13FDDAirportEvaluationProcess.pdf Click to View Fullscreen Contact Agencies Federal Aviation Administration United States Department of Defense Regulations & Policies 49 USC 44718: Structures Interfering with Air Commerce 49 USC 40103: Sovereignty & Use of Airspace Pub. L. 111-383 - the "Ike Skelton National Defense Authorization Act for Fiscal Year 2011 14 CFR 77 - Safe, Efficient Use, and Preservation of the Navigable Airspace Triggers None specified Click "Edit With Form" above to add content 13FDDAirportEvaluationProcess.pdf Error creating thumbnail: Page number not in range.

247

Microsoft PowerPoint - Pittsburgh International Airport to Morgantown Site Directions.ppt [Compatibility Mode]  

NLE Websites -- All DOE Office Websites (Extended Search)

Pittsburgh International Airport to Pittsburgh International Airport to Morgantown Site, Morgantown, WV 1. Exit airport on US-60S toward Pittsburgh/I-79S (follow signs to Pittsburgh, proceed ~7 miles). 2. Merge onto US-22E/US-30E toward Pittsburgh (proceed ~3 miles). 3. Merge onto I-79S toward WASHINGTON, PA (proceed ~25 miles). I-70 East merges with I-79, continue on I-70E/I-79S. 4. Merge RIGHT at Exit 21 onto I-79S toward MORGANTOWN, WV (proceed ~39 miles). 5 T k EXIT 155 STAR CITY EXIT t WV 7 WEST VIRGINIA UNIVERSITY 5. Take EXIT 155, STAR CITY EXIT at WV-7, WEST VIRGINIA UNIVERSITY. 6. Turn LEFT onto CHAPLIN HILL RD. Proceed to 2 nd light (US-19 intersection). 7. Bear RIGHT onto US-19; move into left lane; proceed to first light past bridge. 8. Turn left onto BOYERS AVE. 9. At intersection turn RIGHT onto UNIVERSITY AVE.

248

Cost Benefit Analysis Modeling Tool for Electric vs. ICE Airport Ground Support Equipment – Development and Results  

SciTech Connect

This report documents efforts to develop a computer tool for modeling the economic payback for comparative airport ground support equipment (GSE) that are propelled by either electric motors or gasoline and diesel engines. The types of GSE modeled are pushback tractors, baggage tractors, and belt loaders. The GSE modeling tool includes an emissions module that estimates the amount of tailpipe emissions saved by replacing internal combustion engine GSE with electric GSE. This report contains modeling assumptions, methodology, a user’s manual, and modeling results. The model was developed based on the operations of two airlines at four United States airports.

James Francfort; Kevin Morrow; Dimitri Hochard

2007-02-01T23:59:59.000Z

249

This issue of Briefings focuses on one essential element of all airports. Navigation  

E-Print Network (OSTI)

This issue of Briefings focuses on one essential element of all airports. Navigation aids navigational facilities that provide combined azimuth and glide slope guidance to a runway (pre- cision) and those that do not (nonprecision). Nonprecision refers to facilities without a glide slope and does

Minnesota, University of

250

A security policy framework for eEnabled fleets and airports  

Science Conference Proceedings (OSTI)

The future airport is predicted to be a highly net-centric system-of-systems with advanced networking and wireless technology to accommodate the "eEnabled aircraft," enhanced surface area operations, as well as growing business and societal demands. ...

Mirko Montanari; Roy H. Campbell; Krishna Sampigethaya; Mingyan Li

2011-03-01T23:59:59.000Z

251

A comparison of aircraft trajectory-based and aggregate queue-based control of airport taxi processes  

E-Print Network (OSTI)

There is significant potential to decrease fuel burn, emissions, and delays of aircraft at airports by optimizing surface operations. A simple surface traffic optimization approach is to hold aircraft back at the gates ...

Lee, Hanbong

252

Why some airport-rail links get built and others do not : the role of institutions, equity and financing  

E-Print Network (OSTI)

The thesis seeks to provide an understanding of reasons for different outcomes of airport ground access projects. Five in-depth case studies (Hongkong, Tokyo-Narita, London- Heathrow, Chicago- O'Hare and Paris-Charles de ...

Nickel, Julia, S.M. Massachusetts Institute of Technology

2011-01-01T23:59:59.000Z

253

Testing Protocols and Results: Airport Sound Program Experience and BPI-Resnet Development  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Testing Protocols & Results: Testing Protocols & Results: Airport Sound Program Experience and BPI/RESNET Development Spring 2012 Residential Energy Efficiency Stakeholder Meeting: Combustion Safety in Tight Houses Jim Fitzgerald Center for Energy and Environment Building Performance Institute Page 2  Weatherization, custom windows & central air conditioning  Attic insulation, wall insulation, and attic air sealing - borrowed specs from energy programs and used weatherization contractors  Average house leakage: 7.8 ACH50 before 5.4 ACH50 after MSP secret: this Airport Sound Program does weatherization work to reduce sound All Tightening of Existing Homes Can Affect Combustion Appliance Safety Tightening work was done on 3000 homes with no testing, what could possibly go wrong?

254

Field Evaluation of the 200 kW PAFC Unit at the Pittsburgh International Airport  

Science Conference Proceedings (OSTI)

Distributed generation, particularly in combination with the benefits of fuel cells, is attracting increasing utility industry interest. This report details more than 20,000 hours of automatic, unattended operation of an ONSI 200 kW phosphoric acid fuel cell at the Pittsburgh International Airport. Also included are installation, operation, and performance data on more than twenty other units in the U.S. ONSI fleet.

1997-09-30T23:59:59.000Z

255

Airport Solar Photovoltaic Concentrator Project. Phase 1 - final report, June 1, 1978-February 28, 1979  

DOE Green Energy (OSTI)

The system design, analysis, and specification, site preparation, and operation and evaluation plan for a 500 kWe photovoltaic power supply to be located at the Phoenix Sky Harbor International Airport in Phoenix, Arizona, are presented. The solar cell arrays are concentrator silicon solar cells with tracking 70X Cassegrain-type concentrators. The power conditioning system, tracking system, and control systems are described in detal. Environmental impact studies are described. Component specifications and drawings are included. (WHK)

Not Available

1979-12-01T23:59:59.000Z

256

Estimating Traveler Populations at Airport and Cruise Terminals for Population Distribution and Dynamics  

Science Conference Proceedings (OSTI)

In recent years, uses of high-resolution population distribution databases are increasing steadily for environmental, socioeconomic, public health, and disaster-related research and operations. With the development of daytime population distribution, temporal resolution of such databases has been improved. However, the lack of incorporation of transitional population, namely business and leisure travelers, leaves a significant population unaccounted for within the critical infrastructure networks, such as at transportation hubs. This paper presents two general methodologies for estimating passenger populations in airport and cruise port terminals at a high temporal resolution which can be incorporated into existing population distribution models. The methodologies are geographically scalable and are based on, and demonstrate how, two different transportation hubs with disparate temporal population dynamics can be modeled utilizing publicly available databases including novel data sources of flight activity from the Internet which are updated in near-real time. The airport population estimation model shows great potential for rapid implementation for a large collection of airports on a national scale, and the results suggest reasonable accuracy in the estimated passenger traffic. By incorporating population dynamics at high temporal resolutions into population distribution models, we hope to improve the estimates of populations exposed to or at risk to disasters, thereby improving emergency planning and response, and leading to more informed policy decisions.

Jochem, Warren C [ORNL; Sims, Kelly M [ORNL; Bright, Eddie A [ORNL; Urban, Marie L [ORNL; Rose, Amy N [ORNL; Coleman, Phil R [ORNL; Bhaduri, Budhendra L [ORNL

2013-01-01T23:59:59.000Z

257

Energy, Shading and Daylighting Analysis for the Austin Bergstrom International Airport Terminal  

E-Print Network (OSTI)

Our firm was under contract with the City of Austin, Texas to perform energy analysis and analysis of the daylighting potential within the New Austin Bergstrom International Airport Terminal. Design of the Passenger Terminal Facility for the New Austin Airport included large glass areas for viewing arriving and departing planes, the sky, and the surrounding terrain. The glass was envisioned to provide quality natural lighting for the terminal during daylight hours in order to improve the quality of the space and save energy throughout the usable life of the terminal. For the glass to achieve the design goals, adverse qualities were minimized and beneficial qualities must be enhanced. Using computer simulation, we studied the shading devices on the south clearstories to maximize the daylight and minimize problems of direct gain in a large commercial space. The study also included analysis of skylights above the baggage claim, indirect lighting of major spaces within the airport, and the controls of the artificial lights for integrating the efficient use of the available daylight. The energy, shading, and daylighting analysis includes analysis of a mix of low and high volume spaces. The daylight sources include glass walls, clearstories, and skylights.

Holder, L. M. III; Holder, L. M. IV

2002-01-01T23:59:59.000Z

258

Improved Approach to Lidar Airport Obstruction Surveying Using Full-Waveform Data  

E-Print Network (OSTI)

Over the past decade, the National Oceanic and Atmospheric Administration’s National Geodetic Survey, in collaboration with multiple organizations, has conducted research into airport obstruction surveying using airborne lidar. What was initially envisioned as a relatively straightforward demonstration of the utility of this emerging remote sensing technology for airport surveys was quickly shown to be a challenging undertaking fraught with both technical and practical issues. We provide a brief history of previous work in lidar airport obstruction surveying, including a discussion of both past achievements and previously-unsolved problems. We then present a new processing workflow, specifically designed to overcome the remaining problems. A key facet of our approach is the use of a new lidar waveform deconvolution and georeferencing strategy that produces very dense, detailed point clouds in which the vertical structures of objects are well characterized. Additional processing steps have been carefully selected and ordered based on the objectives of meeting Federal Aviation Administration requirements and maximizing efficiency. Tests conducted using lidar waveform data for two project sites demonstrate the efficacy of the approach. 1

Christopher E. Parrish; Robert D. Nowak

2009-01-01T23:59:59.000Z

259

Accession No. 4. Title and Subtitle The Trans-Texas Corridor and the Texas Airport System: Opportunities and Challenges 7. Author(s)  

E-Print Network (OSTI)

Project Title: Evaluation and Integration of Texas Airports into the Trans-Texas Corridor The proposed Trans-Texas Corridor (TTC) will allow for faster and safer movement of people and goods throughout Texas, relieve congestion on existing roadways, divert hazardous materials away from urban areas, and stimulate economic growth and development along its path. However, to become fully integrated with the Texas transportation network, the TTC must also consider connections with the state’s extensive airport system. While the TTC could produce significant opportunities for commercial services and general aviation airports, many of its planners and engineers are not familiar with the special land-use and connectivity needs of airports. While the TTC offers prospects for producing significant opportunities to commercial service and general aviation airports, it also has the potential to limit their safety, operation, and expansion if planned poorly. Possible airport benefits include increased usage because of improved airport user access and indirectly because of economic development along its path. Potential challenges include infringement on approaches and approach procedures, restriction of airport growth, limited accessibility or connectivity to the TTC, and competition with land-based modes for passenger and freight movement. Integrating Texas airports into the overall multimodal

Kelsey A. Thompson; Michael S. Bomba; C. Michael Walton; Jordan E. Botticello

2003-01-01T23:59:59.000Z

260

Microsoft PowerPoint - To NETL Pittsburgh Site from the Pittsburgh International Airport Directions.ppt [Compatibility Mode]  

NLE Websites -- All DOE Office Websites (Extended Search)

the Pittsburgh International Airport the Pittsburgh International Airport 1. Exit airport and follow signs for PITTSBURGH, which will take you onto ROUTE 60 SOUTH. 2. ROUTE 60 becomes ROUTE 22-30, also know as I-279 the "PARKWAY WEST." 3. Stay on Route 22-30/I-279 the "PARKWAY WEST" until you reach EXIT 5B, labeled TRUCK ROUTE 19 SOUTH/ROUTE 51 SOUTH UNIONTOWN Note: This exit is on the FAR RIGHT 19 SOUTH/ROUTE 51 SOUTH, UNIONTOWN. Note: This exit is on the FAR RIGHT just BEFORE the FORT PITT TUNNEL - do not go into the Tunnel. 4. Continue down ROUTE 51 SOUTH for approximately 7.5 miles. 5. Look for a CVS Pharmacy on the right-hand side of the road. SLOW DOWN since you will soon be exiting off ROUTE 51 SOUTH at the CLOVERLEAF EXIT. 6. After passing CVS (2.5 miles) take the very first road to your RIGHT.

Index
Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
261

An investigation of the information needs of air passengers traveling to the airport  

E-Print Network (OSTI)

According to the U.S. Department of Transportation, Bureau of Transportation Statistics, nearly 200 million person-trips over 100 miles one-way were taken by airplane in 1995, a 186 percent increase since 1977 (Bureau of Transportation Statistics, 1998). As the popularity of air travel continues to increase, the number of trips to and from the airport will inevitably rise also. Passengers will need accurate information about all modes on a total trip basis. This includes the modes of access to and from the airport in addition to the long distance segment of the trip (Sverdrup & Parcel Consultants, Inc., et al., 1996). The purpose of this study was to determine the specific information needs of departing air travelers with regard to the pre-trip and en-route phases of their trip to the airport. Based on the results of this research, effective plans for providing supplementary information in support of ground-side travel can be developed by local, state, and national agencies. To gain an understanding of air passenger information needs, personal interviews were conducted with 216 passengers at George Bush Intercontinental Airport in Houston, Texas. One major finding from this research was that in general, passengers are content with the existing types of real-time travel information that are available. Specifically, the survey results showed that passengers currently use and would prefer to have access to flight information including, confirmed schedules, flight delays, and gate assignments. It was also found that most passengers would prefer to receive travel information earlier in their trip (i.e., before beginning their trip). This could possibly be so that they have the information earlier in their decision-making process and thus would have adequate time to evaluate their options. Finally, based on the survey results, air passengers indicated they would prefer to use e-mail, pagers, telephones, and the Internet when making future travel information inquiries. In particular, business travelers were found to have a higher affinity toward e-mail and pagers, while younger travelers simply preferred newer technologies to receive travel information. As a result, these population categories are prime targets for marketing of information services. Overall, each of these findings was similar to and backed up the results from previous studies.

Burdette, Debra Arlene

2000-01-01T23:59:59.000Z

262

Environmental assessment of the thermal neutron activation explosive detection system for concourse use at US airports  

SciTech Connect

This document is an environmental assessment of a system designed to detect the presence of explosives in checked airline baggage or cargo. The system is meant to be installed at the concourse or lobby ticketing areas of US commercial airports and uses a sealed radioactive source of californium-252 to irradiate baggage items. The major impact of the use of this system arises from direct exposure of the public to scattered or leakage radiation from the source and to induced radioactivity in baggage items. Under normal operation and the most likely accident scenarios, the environmental impacts that would be created by the proposed licensing action would not be significant. 44 refs., 19 figs., 18 tabs.

Jones, C.G.

1990-08-01T23:59:59.000Z

263

Air traffic control communication at Detroit Metro Wayne County Airport August 17, 1987  

E-Print Network (OSTI)

This report contains a transcript of radio communications between air traffic controllers and pilots. The transcript was prepared as part of the ATC Interaction Research Project (AIR Project) at the Oregon Graduate Institute, which has been investigating computational representations of air traffic control (ATC) communication. The transcript was made from a tape prepared and narrated by Lawrence L. Porter, a consultant in the field of air traffic control and aircraft accidents. It follows Northwest Airlines Flight 255 as it landed and took off from Detroit Metro Wayne County Airport on August 17, 1987, showing the pilot's interaction with each of the controller positions (Arrival Radar, Local Control, Ground Control, and Clearance Delivery). A copy of this recording on cassette may be obtained by writing to the Department of Computer Science and Engineering of the Oregon Graduate Institute. The authors thank Mr. Porter for providing the recording and narration. The transcript is in two parts. The section entitled "Full Transcript" depicts all exchanges chronologically as they occurred. However, air traffic control dialogue can be viewed as many interleaved yet fairly independent conversations, so in the "Separated Transcripts" section utterances are grouped by aircraft to show the course of each individual conversation. The utterance numbers from the full transcript are preserved in the separated transcripts so that the utterance context may be located easily. The notation and transcription conventions used in these transcripts are described in Appendix A. Appendix B contains charts describing the airspace around Detroit Metro Wayne County Airport.. The utterances in this transcript contain specialized terms and usages specific to the Air Traffic Control (ATC) domain. B...

Karen Ward; David Novick; Carolyn Sousa

1990-01-01T23:59:59.000Z

264

Train directions from Newark Airport to Nassau Inn or Palmer House Hotel Train is the most convenient way to get to Princeton from EWR. From the terminals at  

E-Print Network (OSTI)

Train directions from Newark Airport to Nassau Inn or Palmer House Hotel Train is the most://tinyurl.com/yc8g3rf or the Palmer House http://www.princeton.edu/palmerhouse/images/map.jpg Train directions from

265

Forecast-Based Decision Support for San Francisco International Airport: A NextGen Prototype System That Improves Operations during Summer Stratus Season  

E-Print Network (OSTI)

During summer, marine stratus encroaches into the approach to San Francisco International Airport (SFO) bringing low ceilings. Low ceilings restrict landings and result in a high number of arrival delays, thus impacting ...

Reynolds, David W.

266

Forecast-Based Decision Support for San Francisco International Airport: A NextGen Prototype System That Improves Operations during Summer Stratus Season  

Science Conference Proceedings (OSTI)

During summer, marine stratus encroaches into the approach to San Francisco International Airport (SFO) bringing low ceilings. Low ceilings restrict landings and result in a high number of arrival delays, thus impacting the National Air Space (NAS). These ...

David W. Reynolds; David A. Clark; F. Wesley Wilson; Lara Cook

2012-10-01T23:59:59.000Z

267

Electrochemical Solution Growth: Gallium Nitride Crystal ...  

... and economical bulk gallium nirtide (GaN) substrates needed to meet the performance requirements of high-efficiency LED and high-power transistors.

268

Manufacturing Consumption of Energy 1991  

U.S. Energy Information Administration (EIA) Indexed Site

West Virginia. 3. Midwest: Illinois, Indiana, Iowa, Kansas, Michi- gan, Minnesota, Missouri, Nebraska, North Dako- ta, Ohio, South Dakota, and Wisconsin. 4. West: Alaska,...

269

ANOMA TERIALS  

Science Conference Proceedings (OSTI)

... and evaluation of two key nanowire device structures: a GaN NW based field-effect-transistor (NWFET) and a novel light-emitting diode (LED). ...

2012-10-02T23:59:59.000Z

270

Semiconductor Nanowire Metrology: Electronics, Photonics ...  

Science Conference Proceedings (OSTI)

... to recent demonstration of two key nanowire device structures: GaN NW based field-effect-transistor (NWFET) and a NW light-emitting diode (LED). ...

2012-10-23T23:59:59.000Z

271

NIST Manuscript Publication Search  

Science Conference Proceedings (OSTI)

... Abstract: Although the efficiency of the Gallium Nitride (GaN) Light Emitting-Diode (LED) has improved in the past decade, a great opportunity ...

2013-12-19T23:59:59.000Z

272

ARM - AMF Data  

NLE Websites -- All DOE Office Websites (Extended Search)

2014 Oliktok Point, Alaska, 2013 Los Angeles, California, to Honolulu, Hawaii, 2012 Cape Cod, Massachusetts, 2012 Gan Island, Maldives, 2011 Ganges Valley, India, 2011 Steamboat...

273

ARM - AMF3 Baseline Instruments  

NLE Websites -- All DOE Office Websites (Extended Search)

2014 Oliktok Point, Alaska, 2013 Los Angeles, California, to Honolulu, Hawaii, 2012 Cape Cod, Massachusetts, 2012 Gan Island, Maldives, 2011 Ganges Valley, India, 2011 Steamboat...

274

ARM - AMF Operations  

NLE Websites -- All DOE Office Websites (Extended Search)

2014 Oliktok Point, Alaska, 2013 Los Angeles, California, to Honolulu, Hawaii, 2012 Cape Cod, Massachusetts, 2012 Gan Island, Maldives, 2011 Ganges Valley, India, 2011 Steamboat...

275

ARM - AMF1 Baseline Instrument  

NLE Websites -- All DOE Office Websites (Extended Search)

2014 Oliktok Point, Alaska, 2013 Los Angeles, California, to Honolulu, Hawaii, 2012 Cape Cod, Massachusetts, 2012 Gan Island, Maldives, 2011 Ganges Valley, India, 2011 Steamboat...

276

ARM - AMF Architecture  

NLE Websites -- All DOE Office Websites (Extended Search)

2014 Oliktok Point, Alaska, 2013 Los Angeles, California, to Honolulu, Hawaii, 2012 Cape Cod, Massachusetts, 2012 Gan Island, Maldives, 2011 Ganges Valley, India, 2011 Steamboat...

277

ARM - AMF Contacts  

NLE Websites -- All DOE Office Websites (Extended Search)

2014 Oliktok Point, Alaska, 2013 Los Angeles, California, to Honolulu, Hawaii, 2012 Cape Cod, Massachusetts, 2012 Gan Island, Maldives, 2011 Ganges Valley, India, 2011 Steamboat...

278

ARM - AMF Science  

NLE Websites -- All DOE Office Websites (Extended Search)

2014 Oliktok Point, Alaska, 2013 Los Angeles, California, to Honolulu, Hawaii, 2012 Cape Cod, Massachusetts, 2012 Gan Island, Maldives, 2011 Ganges Valley, India, 2011 Steamboat...

279

ARM - AMF2 Baseline Instruments  

NLE Websites -- All DOE Office Websites (Extended Search)

2014 Oliktok Point, Alaska, 2013 Los Angeles, California, to Honolulu, Hawaii, 2012 Cape Cod, Massachusetts, 2012 Gan Island, Maldives, 2011 Ganges Valley, India, 2011 Steamboat...

280

ARM - Site Instruments  

NLE Websites -- All DOE Office Websites (Extended Search)

2014 Oliktok Point, Alaska, 2013 Los Angeles, California, to Honolulu, Hawaii, 2012 Cape Cod, Massachusetts, 2012 Gan Island, Maldives, 2011 Ganges Valley, India, 2011 Steamboat...

Index
Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
281

Electrically driven nanopyramid green light emitting diode  

Science Conference Proceedings (OSTI)

An electrically driven nanopyramid green light emitting diode(LED) was demonstrated. The nanopyramid arrays were fabricated from a GaN substrate by patterned nanopillar etch

S.-P. Chang; Y.-C. Chen; J.-K. Huang; Y.-J. Cheng; J.-R. Chang; K.-P. Sou; Y.-T. Kang; H.-C. Yang; T.-C. Hsu; H.-C. Kuo; C.-Y. Chang

2012-01-01T23:59:59.000Z

282

FCRC348Hawlfraint y Goron Crown Copyright 2013 Ydych chi'n chwilio am hwyl i'r teulu cyfan?  

E-Print Network (OSTI)

, gan eu symud ychydig yn nes at y canol bob tro. Daliwch ati nes byddwch wedi defnyddio'ch brigau i gyd

283

L1, Formation of Structural Defects in AlGaN/GaN High Electron ...  

Science Conference Proceedings (OSTI)

Transmission electron microscope (TEM) cross sectional image has shown that electrical degradation is closely related to structural damage in the GaN cap and  ...

284

Strengthening Sintering of Refractory Iron Ore with Biomass Fuel  

Science Conference Proceedings (OSTI)

Presentation Title, Strengthening Sintering of Refractory Iron Ore with Biomass Fuel. Author(s), Xiaohui Fan, Zhiyun Ji, Min Gan, Xuling Chen, Wenqi Li. On-Site

285

Structure and Composition Peculiarities of GaN/AlN Multiple ...  

Science Conference Proceedings (OSTI)

Thickness of AlN and GaN layers in MQWs (multiple quantum wells) were ... InAs Quantum Dots by Ballistic Electron Emission Microscopy and Spectroscopy.

286

Functional Imprinting Structures on GaN-Based Light-Emitting ...  

Science Conference Proceedings (OSTI)

Keywords: GaN, light-emitting diode (LED), imprinting technology, far-field pattern modulation, light extraction. 1. Introduction. GaN-based light-emitting diodes ...

287

NETL F 451.1-1/1 Categorical Exclusion (CX) Designation Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

MIT OE DE-OE0000121 NETL 2012 Brian Mollohan 9302009 - 9302014 Cambridge, MA GaN Electronics for Grid Applications Development of silicon transistors for grid applications...

288

NETL F 451.1-1/1 Categorical Exclusion (CX) Designation Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

MITLincoln Labs OE DE-OE0000121 NETL 2012 Brian Mollohan 9302009 - 9302014 Lexington, Middlesex, MA GaN Electronics for Grid Applications Development of silicon transistors...

289

Semiconductor Nanowire Metrology: Electronics, Photonics ...  

Science Conference Proceedings (OSTI)

... Government agencies following this work include DARPA, DOE, and DTRA. “The work of NIST team on GaN nanowire-based ...

2012-10-05T23:59:59.000Z

290

Part of the Climate Change Problem . . . and the Solution? Chinese-Made Wind Power Technology and Opportunities for Dissemination  

E-Print Network (OSTI)

Lin  Gan.   2002.   “Wind  energy  development  in  China: 4.    24   Canadian  Wind  Energy  Association  (CanWEA).  of Oxford; Xinjiang Wind  Energy Company website: http://

Lewis, Joanna I.

2005-01-01T23:59:59.000Z

291

Final Environmental Assessment for Proposed Closure of the Airport Landfills Within Technical Area 73 at Los Alamos National Laboratory, Los Alamos, New Mexico  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

15 15 Final Environmental Assessment for Proposed Closure of the Airport Landfills Within Technical Area 73 at Los Alamos National Laboratory, Los Alamos, New Mexico May 22, 2005 Department of Energy National Nuclear Security Administration Los Alamos Site Office Final EA for Proposed Closure of the Airport Landfills within TA-73 at LANL Page iii of viii Contents Acronyms and Terms .................................................................................................................. vi 1.0 Purpose and Need ................................................................................................. 1 1.1 Introduction.............................................................................................................

292

Letter Report Yucca Mountain Environmental Monitoring Systems Initiative - Air Quality Scoping Study for Tonopah Airport, Nye County, Nevada  

SciTech Connect

The Desert Research Institute (DRI) is performing a scoping study as part of the U.S. Department of Energy's Yucca Mountain Environmental Monitoring Systems Initiative (EMSI). The main objective is to obtain baseline air quality information for Yucca Mountain and an area surrounding the Nevada Test Site (NTS). Air quality and meteorological monitoring and sampling equipment housed in a mobile trailer (shelter) is collecting data at eight sites outside the NTS, including Ash Meadows National Wildlife Refuge (NWR), Tonopah Airport, Beatty, Rachel, Caliente, Pahranagat NWR, Crater Flat, and the Tonopah Airport, and at four sites on the NTS (Engelbrecht et al., 2007a-d). The trailer is stationed at any one site for approximately eight weeks at a time. This letter report provides a summary of air quality and meteorological data, on completion of the site's sampling program.

J. Engelbrecht; I. Kavouras; D. Campbell; S. Campbell; S. Kohl; D. Shafer

2009-04-02T23:59:59.000Z

293

Letter Report: Yucca Mountain Environmental Monitoring Systems Initiative - Air Quality Scoping Study for Tonopah Airport, Nye County, Nevada  

Science Conference Proceedings (OSTI)

The Desert Research Institute (DRI) is performing a scoping study as part of the U.S. Department of Energy's Yucca Mountain Environmental Monitoring Systems Initiative (EMSI). The main objective is to obtain baseline air quality information for Yucca Mountain and an area surrounding the Nevada Test Site (NTS). Air quality and meteorological monitoring and sampling equipment housed in a mobile trailer (shelter) is collecting data at eight sites outside the NTS, including Ash Meadows National Wildlife Refuge (NWR), Tonopah Airport, Beatty, Rachel, Caliente, Pahranagat NWR, Crater Flat, and the Tonopah Airport, and at four sites on the NTS (Engelbrecht et al., 2007a-d). The trailer is stationed at any one site for approximately eight weeks at a time. This letter report provides a summary of air quality and meteorological data, on completion of the site's sampling program.

J. Engelbrecht; I. Kavouras; D Campbell; S. Campbell; S. Kohl, D. Shafer

2008-08-01T23:59:59.000Z

294

Electric Ground Support Equipment Advanced Battery Technology Demonstration Project at the Ontario Airport  

SciTech Connect

The intent of the electric Ground Support Equipment (eGSE) demonstration is to evaluate the day-to-day vehicle performance of electric baggage tractors using two advanced battery technologies to demonstrate possible replacements for the flooded lead-acid (FLA) batteries utilized throughout the industry. These advanced battery technologies have the potential to resolve barriers to the widespread adoption of eGSE deployment. Validation testing had not previously been performed within fleet operations to determine if the performance of current advanced batteries is sufficient to withstand the duty cycle of electric baggage tractors. This report summarizes the work performed and data accumulated during this demonstration in an effort to validate the capabilities of advanced battery technologies. This report summarizes the work performed and data accumulated during this demonstration in an effort to validate the capabilities of advanced battery technologies. The demonstration project also grew the relationship with Southwest Airlines (SWA), our demonstration partner at Ontario International Airport (ONT), located in Ontario, California. The results of this study have encouraged a proposal for a future demonstration project with SWA.

Tyler Gray; Jeremy Diez; Jeffrey Wishart; James Francfort

2013-07-01T23:59:59.000Z

295

XXXXXXX XXXXXXX XXXXXXX Xxxxxxxxx pXX Xxxxxxxx  

E-Print Network (OSTI)

Headline news solar cells gan LedS IR accuses former CEO of stealing GaN technology p5 record efficiencies images. Several companies are pioneering these systems and in 2011 the Japanese broadcasting corporation Systems' highestcapacity version for core networks, the CRS1, weighs more than 50,000kg and uses 1152

Kolner, Brian H.

296

Structural TEM study of nonpolar a-plane gallium nitride grown on (112_0) 4H-SiC by organometallic vapor phase epitaxy  

E-Print Network (OSTI)

nitride grown on (1120) 4H-SiC by organometallic vapor phasea-plane GaN grown on a 4H-SiC substrate with an AlN buffergrown on (0001) Al 2 O 3 , 6H-SiC or free- standing GaN

Zakharov, Dmitri N.; Liliental-Weber, Zuzanna; Wagner, Brian; Reitmeier, Zachary J.; Preble, Edward A.; Davis, Robert F.

2005-01-01T23:59:59.000Z

297

Cr-Ga-N materials for negative electrodes in Li rechargeable batteries : structure, synthesis and electrochemical performance  

E-Print Network (OSTI)

Electrochemical performances of two ternary compounds (Cr2GaN and Cr3GaN) in the Cr-Ga-N system as possible future anode materials for lithium rechargeable batteries were studied. Motivation for this study was dealt in ...

Kim, Miso

2007-01-01T23:59:59.000Z

298

Gallium-Nitride Transistors for High-Efficiency Industrial Power Supplies, Phase 1: State of Semiconductor Development and Industrial Power Supply Market  

Science Conference Proceedings (OSTI)

This white paper describes recent advancements in the development of Gallium-Nitride (GaN) transistors for power conversion applications. This wide bandgap semiconductor has the potential to reduce losses and improve performance of power converters. The industrial power supply market is described and the application of GaN to power conversion in this segment is introduced for future work.

2013-12-23T23:59:59.000Z

299

May 19, 2010 Student author  

E-Print Network (OSTI)

-off in high-quality green light- emitting diodes on free-standing GaN substrates. Applied Physics Letters. 94 efficiency of InGaN-based light-emitting diodes on sapphire and GaN substrates. Physical Status Solidi (a currents in microperforated blue light-emitting diodes. Applied Physics Letters. 95: 011109. (LCSEE) Yang

Mohaghegh, Shahab

300

Semiconductor Nanoclusters as Potential Photocatalysts  

NLE Websites -- All DOE Office Websites (Extended Search)

0001 0001 Transport and Kinetic Processes in GaN Epitaxial Lateral Overgrowth M. E. Coltrin and C. C. Mitchell Motivation-GaN is a wide band gap semi- conductor with a broad range of potential appli- cations, e.g., high-temperature electronics, op- telectronics, chemical or biological sensors. GaN thin films usually have a high defect den- sity, leading to poor performance. Epitaxial Lat- eral Overgrowth (ELO) has been shown to greatly reduce defect densities, often by factors of 100 or more. We are conducting fundamental studies of GaN growth kinetics during ELO. Accomplishment-In ELO, a mask pattern of dielectric material is deposited on top of a GaN buffer layer. Further growth of GaN occurs se- lectively on exposed areas of the underlying buffer layer, and not on the dielectric material.

Index
Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
301

Role of defects in III-nitride based electronics  

DOE Green Energy (OSTI)

The LDRD entitled ``Role of Defects in III-Nitride Based Devices'' is aimed to place Sandia National Laboratory at the forefront of the field of GaN materials and devices by establishing a scientific foundation in areas such as material growth, defect characterization/modeling, and processing (metalization and etching) chemistry. In this SAND report the authors summarize their studies such as (1) the MOCVD growth and doping of GaN and AlGaN, (2) the characterization and modeling of hydrogen in GaN, including its bonding, diffusion, and activation behaviors, (3) the calculation of energetic of various defects including planar stacking faults, threading dislocations, and point defects in GaN, and (4) dry etching (plasma etching) of GaN (n- and p-types) and AlGaN. The result of the first AlGaN/GaN heterojunction bipolar transistor is also presented.

HAN,JUNG; MYERS JR.,SAMUEL M.; FOLLSTAEDT,DAVID M.; WRIGHT,ALAN F.; CRAWFORD,MARY H.; LEE,STEPHEN R.; SEAGER,CARLETON H.; SHUL,RANDY J.; BACA,ALBERT G.

2000-01-01T23:59:59.000Z

302

The Lisbon new international airport: The story of a decision-making process and the role of Strategic Environmental Assessment  

SciTech Connect

This is the brief story of a decision process and the role of Strategic Environmental Assessment in government political decision-making. Following a prolonged, and agitated, decision process, initiated in the 1960s, the Government of Portugal in 2005 took the final decision to build the new international airport of Lisbon at the controversial location of Ota, 40 km north of Lisbon. The detailed project design and EIA were started. However this decision would change in 2007 due to the challenge raised by a private sponsored study that identified an alternative location for the airport at Campo de Tiro de Alcochete (CTA). This new site, which had never been considered as an option before, appeared to avoid many of the problems that caused public controversy at the Ota site. The Government, pressured by this challenge, promoted a strategic comparative assessment between the two sites. The result of this study was the choice of CTA as the preferred location. This paper discusses this radical change in the decision from a socio-political perspective. It will highlight the relevance of Strategic Environmental Assessment (SEA), and the strategic and constructive approach it enables in mega-project decision-making.

Partidario, Maria R., E-mail: mrp@civil.ist.utl.p [Instituto Superior Tecnico, Departamento de Engenharia Civil e Arquitectura, Av. Rovisco Pais, 1049-001 LISBOA (Portugal); Coutinho, Miguel, E-mail: miguel.coutinho@ua.p [IDAD-Instituto do Ambiente e Desenvolvimento, Campus Universitario, 3810-193 AVEIRO (Portugal)

2011-04-15T23:59:59.000Z

303

Improving Building Comfort and Energy Savings of the McKenzie Airport Terminal by Maintaining and Improving Pneumatic Control Systems  

E-Print Network (OSTI)

McKenzie Airport Terminal is located at Easterwood Airport, which is owned and operated by Texas A&M University. It was built in 1988. Most all HVAC equipment, which includes boiler, chiller, pumps, AHUs and exhaust fans, due to lack of maintenance, had some form of deteriorated controls, components, and operational function. For example, most of pneumatic controls were failed due to bad components, wrong settings, and disconnection before the Continuous CommissioningR (CCSM). This caused humid and hot problems of the building, and wasted energy. After maintaining and improving the pneumatic controls, the boiler and hot water pump is now turned off when outside air temperature is higher than 80°F. The chiller is now shut off when the outside air temperature is below 55 °F, and the economizers activate to maintain discharge air temperature when the outside air temperature is below 60 °F. The building comfort in temperature and relative humidity (RH) is improved after CCSM. For example, average space temperature of the building was above 75 °F most of the time before CCSM and is now 73 °F after CCSM. The relative humidity in the baggage claim area was 70% before CCSM and is now 55% after CCSM. The annual savings of electricity for chiller and natural gas for boiler are $5,040 and $12,090 respectively. The total annual energy savings are $17,130.

Liu, C.; Bruner, H. L.; Deng, S.; Brundidge, T.; Turner, W. D.; Claridge, D. E.

2004-01-01T23:59:59.000Z

304

Skill of a Ceiling and Visibility Local Ensemble Prediction System (LEPS) according to Fog-Type Prediction at Paris-Charles de Gaulle Airport  

Science Conference Proceedings (OSTI)

A specific event, called a low-visibility procedure (LVP), has been defined when visibility is under 600 m and/or the ceiling is under 60 m at Paris-Charles de Gaulle Airport, Paris, France, to ensure air traffic safety and to reduce the economic ...

Stevie Roquelaure; Robert Tardif; Samuel Remy; Thierry Bergot

2009-12-01T23:59:59.000Z

305

Tell President Obama About Coal River Mountain Coal River Mountain and the Heathrow Airport runway remind me how important it is to  

E-Print Network (OSTI)

Tell President Obama About Coal River Mountain Coal River Mountain and the Heathrow Airport runway remind me how important it is to keep our eye on the ball. Coal River Mountain is the site of an absurdity. I learned about Coal River Mountain from students at Virginia Tech last fall. They were concerned

Hansen, James E.

306

Preliminary assessment report for Virginia Army National Guard Army Aviation Support Facility, Richmond International Airport, Installation 51230, Sandston, Virginia  

SciTech Connect

This report presents the results of the preliminary assessment (PA) conducted by Argonne National Laboratory at the Virginia Army National Guard (VaARNG) property in Sandston, Virginia. The Army Aviation Support Facility (AASF) is contiguous with the Richmond International Airport. Preliminary assessments of federal facilities are being conducted to compile the information necessary for completing preremedial activities and to provide a basis for establishing corrective actions in response to releases of hazardous substances. The PA is designed to characterize the site accurately and determine the need for further action by examining site activities, quantities of hazardous substances present, and potential pathways by which contamination could affect public health and the environment. The AASF, originally constructed as an active Air Force interceptor base, provides maintenance support for VaARNG aircraft. Hazardous materials used and stored at the facility include JP-4 jet fuel, diesel fuel, gasoline, liquid propane gas, heating oil, and motor oil.

Dennis, C.B.

1993-09-01T23:59:59.000Z

307

NOx, SOx and CO2 Emissions Reduction from Continuous Commissioning® (CC®) Measures at the Rent-A-Car Facility in the Dallas-Fort Worth International Airport  

E-Print Network (OSTI)

The Energy Systems Laboratory (ESL) at the Texas Engineering Experiment Station, Texas A&M University System was contracted to fulfill a Continuous Commissioning® (CC®)project on the Rent-a-Car facility (RAC) of the Dallas-Fort Worth International Airport (DFWIA) in which energy savings are directly related to an emission reduction that can be credited. The purpose of this study is to estimate the creditable emissions reductions from energy efficiency CC® measures in the RAC of DFWIA.

Baltazar-Cervantes, J. C.; Haberl, J. S.; Yazdani, B.

2006-10-27T23:59:59.000Z

308

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

Science Conference Proceedings (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

309

Electrochemical investigation of the gallium nitride-aqueous electrolyte interface  

SciTech Connect

GaN (E{sub g} = {approximately}3.4 eV) was photoelectrochemically characterized and the energetic position of its bandedges determined with respect to SHE. Electrochemical impedance spectroscopy was employed to analyze the interface, determine the space charge layer capacitance, and, subsequently obtain the flatband potential of GaN in different aqueous electrolytes. The flatband potential of GaN varied at an approximately Nernstian rate in aqueous buffer electrolytes of different pHs indicating acid-base equilibria at the interface.

Kocha, S.S.; Peterson, M.W.; Arent, D.J.; Turner, J.A. [National Renewable Energy Lab., Golden, CO (United States). Photoconversion Branch; Redwing, J.M.; Tischler, M.A. [Advanced Technology Materials, Inc., Danbury, CT (United States)

1995-12-01T23:59:59.000Z

310

Using a Constant Volume Displacement Ventilation System to Create a Micro Climate in a Large Airport Terminal in Bangkok  

E-Print Network (OSTI)

In order to conserve energy and create a comfortable climate for both passengers and workers at a new large international airport in Thailand, a design concept was created where only the first 2m above the occupied zone is conditioned. The temperature of the air outside of this area is allowed to rise above normal conditions. The idea was to let this temperature rise so that it was either equal to or higher than the outdoor temperature, thus reducing heat gain. Computer simulation programs were used to define parameters for the CF'D program. Once the boundary conditions were defined, the process of design analysis began. This paper will outline the steps taken to set up the CF'D program. Secondly, the exploration taken to obtain an optimal climate, and thirdly, how the many results were used to explain to both fellow engineers and the architects what had been achieved. The conclusion of this analysis was the design of special supply air grilles to meet the design criteria.

Simmonds, P.; Gaw, W.

1996-01-01T23:59:59.000Z

311

Patterning of the Ciona intestinalis Motor Ganglion  

E-Print Network (OSTI)

Pitx2 as markers for fast motor neurons and partition cells.for the specification of motor neuron identity. Cell Gans,Tsuda, M. (2010). Simple motor system of the ascidian larva:

Stolfi, Alberto Sunao

2011-01-01T23:59:59.000Z

312

Solid-State Lighting: Cantilever Epitaxy Process Wins R&D 100...  

NLE Websites -- All DOE Office Websites (Extended Search)

growth process begins with etching trenches into the sapphire substrate, leaving stripes of mesas in the surface. Vertical growth of the GaN overlayer is then initiated on...

313

 

NLE Websites -- All DOE Office Websites (Extended Search)

Defect-Driven Magnetism in Mn-doped GaN Defect-Driven Magnetism in Mn-doped GaN Semiconductors doped with magnetic elements are very interesting materials. In these materials, the magnetic impurities interact with and induce magnetism in the semiconductor host. Thus, they have the potential for combining magnetism with the rich electronic behavior of semiconductors, which may lead to new generations of low-power-consumption electronics, non-volatile memories, and field-configurable logic devices. Gallium nitride doped with Mn is particularly interesting because it is one of the few materials for which magnetism above room temperature has been reported, making it a candidate room-temperature magnetic semiconductor. Photo: Gan Molecules Illustration of the crystal structures derived from x-ray results and calculations. In ideal GaN (left), a Mn atom substitutes

314

Semiconductor Nanoclusters as Potential Photocatalysts  

NLE Websites -- All DOE Office Websites (Extended Search)

High Power Electronics Based on the 2-Dimensional Electron Gas in GaN High Power Electronics Based on the 2-Dimensional Electron Gas in GaN Heterostructures by S. R. Kurtz, A. A. Allerman, and D. Koleski Motivation-GaN-based electronics offer miniaturization potential of radical proportions for microwave power amplifiers. GaN's large bandgap, high breakdown field, high electron velocity, and excellent thermal properties have led to high electron mobility transistors (HEMT) with up to 10x the power density of GaAs and other traditional semiconductors at frequencies up to 20 GHz. Further contributing to the outstanding performance of GaN-based amplifiers is the highly conducting, 2-dimensional electron gas (2DEG) used for the HEMT channel. Intrinsic polarization and piezoelectric properties of GaN materials can produce a 2DEG at an

315

Semiconductor Nanoclusters as Potential Photocatalysts  

NLE Websites -- All DOE Office Websites (Extended Search)

Development of Cantilever Epitaxy to Produce High Quality GaN with Reduced Development of Cantilever Epitaxy to Produce High Quality GaN with Reduced Threading Dislocation Densities by C. C. Mitchell, A. A. Allerman, C. I. H. Ashby, R. D. Briggs, D. M. Follstadt, S. L. Lee, D. D. Koleske Motivation-GaN grown on any currently available substrates has an inherent problem of having to overcome a large lattice mismatch with the substrate. As a result typical planar GaN includes anywhere from 10 8 - 10 10 threading dislocations per square centimeter. Cantilever epitaxy (CE) is a technique developed to produce areas of GaN with a reduced number of vertical threading dislocations (VTDs) over large areas. Low defect materials are required to reduce leakage and breakdown of both electronic and opto- electronic devices. Accomplishment-This

316

JEM Table of Contents: March 1997  

Science Conference Proceedings (OSTI)

266-271] A.T. Ping, A.C. Schmitz, I. Adesida, M. Asif Khan, Q. Chen, and J.W. Yang. In Situ Control of GaN Growth by Molecular Beam Epitaxy [pp. 272-280

317

BB5, Nearly Ideal Current-Voltage Characteristics of Schottky Barrier ...  

Science Conference Proceedings (OSTI)

Recently, high-quality GaN free-standing substrates are available by various methods. ... Current-voltage (I-V) characteristics and capacitance-voltage (C-V) ...

318

K4, Improved Microstructure and Ohmic Contact of Nb Electrode on ...  

Science Conference Proceedings (OSTI)

Obtained results showed the formation of niobium carbide and niobium silicide ..... W1, Shape Transformation of Nanoporous GaN by Annealing: Buried Cavities ... X9, Solution-Processed Zirconium Oxide and Integration with Zinc-Tin Oxide ...

319

CX-010974: Categorical Exclusion Determination | Department of...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

CX-010974: Categorical Exclusion Determination Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle...

320

Power Electronics Reliability Kick Off Meeting ? Silicon Power...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

failure modes of post-silicon power electronic (PE) devices such as silicon carbide (SiC) and gallium nitride (GaN) switches. * Seek opportunities for condition monitoring (CM)...

Index
Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
321

NETL F 451.1/1-1, Categorical Exclusion Designation Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

PVTD FY14-15 1012013 to 9302015 John Tabacchi Fayetteville, AR Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... Develop...

322

STATEMENT OF CONSIDERATIONS PETITION FOR ADVANCE WAIVER OF PATENT...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

is the design, manufacture and sale of commercial semiconductor products utilizing SiC and GaN technologies. CREE has a business unit devoted solely to the development of...

323

NETL F 451.1/1-1, Categorical Exclusion Designation Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

12013 to 9302015 John Tabacchi 535W Research Ctr B, Fayettevile,AR Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... To...

324

CX-010973: Categorical Exclusion Determination | Department of...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

CX-010973: Categorical Exclusion Determination Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle...

325

ARM - AMIE Field Campaign  

NLE Websites -- All DOE Office Websites (Extended Search)

climate models have difficulty predicting its effects and its interactions with the monsoon and El Nio. AMIE-Gan will measure the area where the MJO begins its eastward...

326

HH5, Antiferromagnetic Interlayer Exchange Couplings in Ga  

Science Conference Proceedings (OSTI)

Author(s), Sun Jae Chung, Sanghoon Lee, Brian J. Kirby, Julie A. Borchers, ... LATE NEWS: KK3, Non-Catalytic Synthesis of GaN Nanostructures at Low ...

327

the DRIP XIII Conference  

Science Conference Proceedings (OSTI)

Sep 14, 2009 ... Fundamental studies of how localized charged defects affect current transport .... To resolve this question, we studied a series of GaN films with thicknesses ...... Handbook of Silicon Wafer Cleaning Technology, 2nd edition.

328

Enabling Low–Cost Large–Area OPV Solar Power - Programmaster ...  

Science Conference Proceedings (OSTI)

Plextronics, Inc. is helping seed the renewable energy OPV market by .... Stress Relaxation in GaN Epilayers Grown by MOCVD with Indium Surfactant ... Tight Binding and LCAO Methods for Tin Oxide Deposited by Chemical Vapour ...

329

MSTC - Microsystems Science, Technology, and Components - RF...  

NLE Websites -- All DOE Office Websites (Extended Search)

band RF input and supplies N identical outputs (N4 or 8). SiGe, GaAs, GaN RFICs. Passive RF detectors - Pyroelectric microdetectors that produce a DC output proportional to...

330

I I  

Office of Legacy Management (LM)

six points. BaCKground external ganLna readings ranged from 3 to 6 uRh and averaged 4.5 JARh (Ref. 1). Background radiation rates and radionuclide concentrations in soil are...

331

Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystals  

Science Conference Proceedings (OSTI)

We report on the spatially selective formation of GaN nanocrystals embedded in GaAs. Broad-area N{sup +} implantation followed by rapid thermal annealing leads to the formation of nanocrystals at the depth of maximum ion damage. With additional irradiation using a Ga{sup +} focused ion beam, selective lateral positioning of the nanocrystals within the GaAs matrix is observed in isolated regions of increased vacancy concentration. Following rapid thermal annealing, the formation of zincblende GaN is observed in the regions of highest vacancy concentration. The nucleation of zincblende nanocrystals over the wurtzite phase of bulk GaN is consistent with the predictions of a thermodynamic model for the nanoscale size-dependence of GaN nucleation.

Wood, A. W. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States); Collino, R. R. [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Cardozo, B. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Naab, F. [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109 (United States); Wang, Y. Q. [Materials Science and Technology Division, Los Alamos National Lab, Los Alamos, New Mexico 87545 (United States); Goldman, R. S. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2011-12-15T23:59:59.000Z

332

Radiation-Hardened Gallium Nitride Detector and Arrays for Fusion Diagnostics  

Science Conference Proceedings (OSTI)

This poster reports testing to confirm that GaN devices exhibit the extreme radiation hardness needed for use at the NIF, functioning properly after 1x10{sup 12} protons/cm{sup 2} proton irradiation in one year.

Sun, K. X., and MacNeil, L.

2011-09-08T23:59:59.000Z

333

ARM - Data Announcements Article  

NLE Websites -- All DOE Office Websites (Extended Search)

August 19, 2013 Data Announcements Large-Scale Forcing Data for AMIE-Gan Available for Evaluation Large-scale forcing data from the SMART-R precipitation radar (top) and Omega...

334

Worldwide Links of Solid-State Lighting  

NLE Websites -- All DOE Office Websites (Extended Search)

semiconductor business news Electronics Design News (EDN) GaN Net.com Laser Focus World LED Journal LED Lighting Tech (PIDA-sponsored) LEDMarketplace.com Lighting.coms Focus...

335

Solid-State Lighting Issue 19: Scientific Literature (Mid-July...  

NLE Websites -- All DOE Office Websites (Extended Search)

(Japan) Nippon EMC (Japan) Mitsubishi Cable Industries Ltd. (Japan) "A UV light-emitting diode incorporating GaN quantum dots." S Tanaka, JS Lee, P Ramvall, and H Okagawa, in...

336

2002 emc at-a-glance  

Science Conference Proceedings (OSTI)

Sergey Nikishin. 2:00 PM G3 (Student), Surface-Emitting. Light-Emitting Diode with a GaN. Tunnel-Junction Current Aperture ..................... Jeon Seong-Ran.

337

BIG RU N INDIANA LAKESHORE RUN E LUMBER CIT Y WARSAW JOHNST  

Annual Energy Outlook 2012 (EIA)

CORN ER S GRU GAN NEBRASKA AR TEMAS MILL R UN DRIF TING TOBY CR EEK RUNVILLE MURRYSVILLE CAT FISH R UN HECKMAN HOLLOW KART HAUS WEST FIELD POT R IDGE PARSONSVILLE RED BRUSH BLU E...

338

Development of gallium nitride power transistors  

E-Print Network (OSTI)

GaN-based high-voltage transistors have outstanding properties for the development of ultra-high efficiency and compact power electronics. This thesis describes a new process technology for the fabrication of GaN power ...

Piedra, Daniel, M. Eng. Massachusetts Institute of Technology

2011-01-01T23:59:59.000Z

339

N8, Design Principles for Light-Trapping in Thin Silicon Films with ...  

Science Conference Proceedings (OSTI)

Unfortunately, photon absorption in the near-infrared spectrum is very weak in .... on Polar, Nonpolar, and Semipolar GaN Orientations Grown by Ammonia MBE ..... Photoelectrode for Water Oxidation and in Photoelectrochemical Solar Cells.

340

Developing health-based pre-planning clearance goals for airport remediation following chemical terrorist attack: Introduction and key assessment considerations  

Science Conference Proceedings (OSTI)

In the event of a chemical terrorist attack on a transportation hub, post-event remediation and restoration activities necessary to attain unrestricted facility re-use and re-entry could require hours to multiple days. While restoration timeframes are dependent on numerous variables, a primary controlling factor is the level of pre-planning and decision-making completed prior to chemical terrorist release. What follows is the first of a two-part analysis identifying key considerations, critical information, and decision criteria to facilitate post-attack and post-decontamination consequence management activities. A conceptual site model and human health-based exposure guidelines are developed and reported as an aid to site-specific pre-planning in the current absence of U.S. state or Federal values designated as compound-specific remediation or re-entry concentrations, and to safely expedite facility recovery to full operational status. Chemicals of concern include chemical warfare nerve and vesicant agents and the toxic industrial compounds phosgene, hydrogen cyanide, and cyanogen chloride. This work has been performed as a national case study conducted in partnership with the Los Angeles International Airport and The Bradley International Terminal. All recommended guidelines have been selected for consistency with airport scenario release parameters of a one-time, short-duration, finite airborne release from a single source followed by compound-specific decontamination.

Watson, Annetta Paule [ORNL; Raber, Ellen [Lawrence Livermore National Laboratory (LLNL); Dolislager, Frederick [University of Tennessee, Knoxville (UTK); Hauschild, Veronique [U.S. Army Center for Health Promotion and Preventive Medicine; Hall, Dr. Linda [ENVIRON International Corporation; Love, Dr. Adam [Johnson Wright, Inc.

2011-01-01T23:59:59.000Z

Index
Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
341

Developing health-based pre-planning clearance goals for airport remediation following a chemical terrorist attack: Decision criteria for multipathway exposure routes  

Science Conference Proceedings (OSTI)

In the event of a chemical terrorist attack on a transportation hub, post-event remediation and restoration activities necessary to attain unrestricted facility re-use and re-entry could require hours to multiple days. While timeframes are dependent on numerous variables, a primary controlling factor is the level of pre-planning and decision-making completed prior to chemical release. What follows is the second of a two-part analysis identifying key considerations, critical information and decision criteria to facilitate post-attack and post-decontamination consequence management activities. Decision criteria analysis presented here provides first-time, open-literature documentation of multi-pathway, health-based remediation exposure guidelines for selected toxic industrial compounds, chemical warfare agents, and agent degradation products for pre-planning application in anticipation of a chemical terrorist attack. Guideline values are provided for inhalation and direct ocular vapor exposure routes as well as percutaneous vapor, surface contact, and ingestion. Target populations include various employees as well as transit passengers. This work has been performed as a national case study conducted in partnership with the Los Angeles International Airport and The Bradley International Terminal. All recommended guidelines have been selected for consistency with airport scenario release parameters of a one-time, short-duration, finite airborne release from a single source followed by compound-specific decontamination.

Watson, Annetta Paule [ORNL; Dolislager, Frederick [University of Tennessee, Knoxville (UTK); Hall, Dr. Linda [ENVIRON International Corporation; Hauschild, Veronique [U.S. Army Center for Health Promotion and Preventive Medicine; Raber, Ellen [Lawrence Livermore National Laboratory (LLNL); Love, Dr. Adam [Johnson Wright, Inc.

2011-01-01T23:59:59.000Z

342

Fresnel/photovoltaic concentrator application experiment for the Dallas-Fort Worth airport. Phase 1: system design, final technical report, 1 June 1978-28 February 1979  

DOE Green Energy (OSTI)

This Phase I Final Report summarizes the analytical, experimental, design, and specification efforts for the first nine months of the Dallas/Fort Worth Airport Fresnel/Photovoltaic Concentrator Application Experiment. The overall objective of the complete three-phase program is to develop and demonstrate a unique photovoltaic concentrator total energy system which, when mass-produced, will provide electrical and thermal energy at costs competitive with conventional energy sources. Toward this objective, the Phase I - System Design contract has been completed, resulting in a final system design, analytical definition of system performance and economics, and a successfully tested prototype collector which fully verified performance predictions. The proposed system will utilize 245 m/sup 2/ of E-Systems linear Fresnel photovoltaic collectors to provide 25 kW/sub e/ (AC) of power and 140 kW/sub t/ of heat to the Central Utility Facility of Dallas/Fort Worth Airport. The electric power will be used to meet a continuous lighting load, while the thermal energy will be used to preheat boiler feedwater. Peak system efficiencies will be 10.2% electric (insolation to net AC output) and 56% thermal (insolation to net heat delivered). Annual efficiencies will be 8.4% electric and 49% thermal. Production system economics are attractive in the near term: 7 cents/kWh electricity and $7/MMBtu heat (1975 $) could be achieved by 1981 with limited production. With higher production, these costs could be halved by 1990.

O'Neill, M.J.

1979-03-01T23:59:59.000Z

343

Journal of Light Emitting Diodes Vol 2 N0 1, April 2010 1 Abstract--In metal organic vapor phase epitaxy we developed  

E-Print Network (OSTI)

Journal of Light Emitting Diodes Vol 2 N0 1, April 2010 1 Abstract-- In metal organic vapor phase epitaxy we developed GaInN/GaN quantum well material suitable for 500 ­ 580 nm light emitting diodes at longer wavelengths. Index Terms-- a-plane GaN, GaInN, Green light emitting diode, m-plane GaN I

Wetzel, Christian M.

344

The DOE/Gosatomnadzor collaboration, Project 3: Providing equipment and support for Gosatomnadzor inspection activities in Russia  

SciTech Connect

Project 3 consists of two subprojects: Project 3.1 -- providing Materials Control and Accounting (MC and A) equipment to GAN inspectors; and Project 3.2 -- the development of Russian indigenous MC and A equipment capability for GAN. The objective of Project 3.1 is to provide equipment for use by GAN inspectors during independent inspections of facilities that contain direct-use material. To accomplish this, Project 3.1 develops the initial training for GAN instructors on the instruments provided by the US and contracts with Safety Limited, a GAN contractor for developing methodologies and procedures for using the equipment and acceptance checkout and delivery. The equipment deliveries were divided into three phases to fit within the DOE budget and priority constraints. With the equipment delivered to the inspectors, Phase 1 is complete. Phase 2 has been started by purchasing and checking out neutron coincidence counting (NCC) equipment at Los Alamos. The GAN instructors have been trained on NCCs, cherenkov vision devices (CVDs), ultrasonic thickness gages (UTGs), and tamper indicating devices (TIDs) at Los Alamos. Phase 3 has been delayed to fiscal year 1999 (FY99) due to budget constraints. Project 3.2 addresses the important issue of sustainability for safeguards equipment in Russia. GAN`s Project 3.2 will help establish indigenous equipment for Russian safeguards. The initial review of Russian manufacturing capabilities for safeguards equipment has been completed and recommendations have been made. To this end, the authors are encouraging US vendors to collaborate with Russian institutes and have contracted with the All-Russia Research Institute of Automatics (VINIIA) and Aquila Technologies to fabricate a Russian Active-Well Coincidence Counter (AWCC) from US parts.

Hoida, H.W. [Los Alamos National Lab., NM (United States); Lanier, R. [Lawrence Livermore National Lab., CA (United States); Schultz, F. [Oak Ridge National Lab., TN (United States)

1997-12-31T23:59:59.000Z

345

Technische Universitt Berlin Institute of Solid State Physics  

E-Print Network (OSTI)

GaN/ AlGaN blue green light emitting diode, which has a much higher quantum efficiency than the SiC blue light emitting diode, became possible.2 Presently the wide bandgap semi- conductor GaN is intensively. Especially the 1.19 eV is very intense. Thus one can think of developing a light emitting diode in the near

Nabben, Reinhard

346

Abbreviated epitaxial growth mode (AGM) method for reducing cost and improving quality of LEDs and lasers  

DOE Patents (OSTI)

The use of an abbreviated GaN growth mode on nano-patterned AGOG sapphire substrates, which utilizes a process of using 15 nm low temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned AGOG sapphire by employing abbreviated growth mode has two orders of magnitude lower threading dislocation density than that of conventional GaN template grown on planar sapphire. The use of abbreviated growth mode also leads to significant reduction in cost of the epitaxy. The growths and characteristics of InGaN quantum wells (QWs) light emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano-patterned AGOG sapphire demonstrated at least a 24% enhancement of output power enhancement over that of LEDs grown on conventional GaN templates.

Tansu, Nelson; Chan, Helen M; Vinci, Richard P; Ee, Yik-Khoon; Biser, Jeffrey

2013-09-24T23:59:59.000Z

347

Southern Study Area Airport  

NLE Websites -- All DOE Office Websites (Extended Search)

SSA-OJP Photos | SSA-YA Photos | SSA-YJP Photos | SSA-Ops Photos | ORNL DAAC Home || ORNL Home || NASA || Privacy, Security, Notices || Data Citation || Rate Us || Help | User...

348

Annual Review of BPA-Funded Projects in Natural and Artificial Propagation of Salmonids, March 27-29, 1985, Holiday Inn Airport, Portland, Oregon.  

Science Conference Proceedings (OSTI)

The Fish and Wildlife Division of Bonneville Power Administration (BPA) hosted a meeting for contractors to present the results of fiscal year 1984 research conducted to implement the Northwest Power Planning Council's Fish and Wildlife Program. The meeting focused on those projects specifically related to natural and artificial propagation of salmonids. The presentations were held at the Holiday Inn Airport in Portland, Oregon, on March 27-29, 1985. This document contains abstracts of the presentations from that meeting. Section 1 contains abstracts on artificial propagation, fish health, and downstream migration, and Section 2 contains abstracts on natural propagation and habitat improvement. The abstracts are indexed by BPA Project Number and by Fish and Wildlife Program Measure. The registered attendees at the meeting are listed alphabetically in Appendix A and by affiliation in Appendix B.

United States. Bonneville Power Administration.

1985-04-01T23:59:59.000Z

349

Heteroepitaxial growth of GaN/Si (111) junctions in ammonia-free atmosphere: Charge transport, optoelectronic, and photovoltaic properties  

Science Conference Proceedings (OSTI)

We report the catalyst-free growth of gallium nitride (GaN) nanostructures on n-Si (111) substrates using physical vapor deposition via thermal evaporation of GaN powder at 1150 Degree-Sign C in the absence of NH{sub 3} gas. Scanning electron microscopy and energy dispersive x-ray analysis indicate that the growth rate of GaN nanostructures varies with deposition time. Photoluminescence spectra showed the suppression of the UV emission and the enhancement of the visible band emission with increasing the deposition time. The fabricated GaN nanostructures exhibited p-type behavior at the GaN/Si interface, which can be related to the diffusion of Ga into the Si substrate. The obtained lowest reflection and highest transmittance over a wide wavelength range (450-750 nm) indicate the high quality of the fabricated GaN films. Hall-effect measurements showed that all fabricated films have p-type behavior with decreasing electron concentration from 10{sup 21} to 10{sup 12} cm{sup -3} and increasing the electron mobility from 50 to 225 cm{sup 2}/V s with increasing the growth time. The fabricated solar cell based on the 1 h-deposited GaN nanostructures on n-Si (111) substrate showed a well-defined rectifying behavior with a rectification ratio larger than 8.32 Multiplication-Sign 10{sup 3} in dark. Upon illumination (30 mW/cm{sup 2}), the 1 h-deposited heterojunction solar cell device showed a conversion efficiency of 5.78%. The growth of GaN in the absence of NH{sub 3} gas has strong effect on the morphological, optical, and electrical properties and consequently on the efficiency of the solar cell devices made of such layers.

Saron, K. M. A.; Hashim, M. R. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Penang 11800 (Malaysia); Allam, Nageh K. [Energy Materials Laboratory (EML), Department of Physics, School of Sciences and Engineering, The American University in Cairo, New Cairo 11835 (Egypt)

2013-03-28T23:59:59.000Z

350

Closure Report for Corrective Action Unit 230: Area 22 Sewage Lagoons and Corrective Action Unit 320: Area 22 Desert Rock Airport Strainer Box Nevada Test Site, Nevada  

SciTech Connect

This Closure Report (CR) describes the remediation activities performed and the results of verification sampling conducted at Corrective Action Unit (CAU) 230, Area 22 Sewage Lagoons and CAU 320, Area 22 Desert Rock Airport Strainer Box. The CAU is currently listed in Appendix III of the Federal Facility Agreement and Consent Order (FFACO, 1996). The CAU is located in Area 22 of the Nevada Test Site (NTS) (Figure 1) and consists of the following Corrective Action Sites (CASs): 22-03-01- Sewage Lagoon (CAU 230); and 22-99-01- Strainer Box (CAU 320). Included with CAS 22-99-01 is a buried Imhoff tank and a sludge bed. These CAUs will be collectively referred to in this plan as the Area 22 Sewage Lagoons site. Site characterization activities were done during September 1999. Characterization of the manholes associated with the septic system leading to the Imhoff tank was done during March 2000. The results of the characterization presented in the Corrective Action Decision Document (CADD) indicated that only the sludge bed (CAS 22-99-01) contained constituents of concern (COC) above action levels and required remediation (U.S. Department of Energy, Nevada Operations Office [DOE/NV], 2000a).

D. S. Tobiason

2001-07-01T23:59:59.000Z

351

Superfund record of decision (EPA Region 4): New Hanover County Airport Burn Pit Site, New Hanover County, Wilmington, NC. (First remedial action), September 1992. Final report  

SciTech Connect

The New Hanover site was located on Gardner Road approximately 500 feet west of the New Hanover County Airport terminal, New Hanover, North Carolina. From 1968 to 1979, the site was used for fire-fighter training purposes. During training exercises, jet fuel, gasoline, petroleum storage bottoms, fuel oil, kerosene, and sorbent materials from oil spill cleanup were burned in a pit. During its active years, water from the pit was allowed to flow onto land surfaces. Inspections conducted after the pit was abandoned showed that most of the standing liquid in the pit was water. In addition to the burn pit area, fire-fighting activities resulted in contamination at several other site areas, including an auto burn area; a railroad tank burn area; an aircraft mock-up area; a fuel tank and pipelines area; and two stained soil areas north of the burn pit. The ROD addressed restoration of the aquifer to drinking water quality as a final action for the site. The primary contaminants of concern that affect the soil and ground water were VOCs, including benzene; and metals, including chromium and lead.

Not Available

1992-09-29T23:59:59.000Z

352

Temperature dependence and current transport mechanisms in Al{sub x}Ga{sub 1-x}N Schottky rectifiers  

SciTech Connect

GaN and Al{sub 0.25}Ga{sub 0.75}N lateral Schottky rectifiers were fabricated either with (GaN) or without (AlGaN) edge termination. The reverse breakdown voltage V{sub B} (3.1 kV for GaN; 4.3 kV for AlGaN) displayed a negative temperature coefficient of -6.0{+-}0.4 V K{sup -1} for both types of rectifiers. The reverse current originated from contact periphery leakage at moderate bias, while the forward turn-on voltage at a current density of 100 A cm-2 was {approx}5 V for GaN and {approx}7.5 V for AlGaN. The on-state resistances, R{sub ON}, were 50 m{omega} cm2 for GaN and 75 m{omega} cm2 for AlGaN, producing figures-of-merit (V{sub RB}){sup 2}/R{sub ON} of 192 and 246 MW cm-2, respectively. The activation energy of the reverse leakage was 0.13 eV at moderate bias. (c) 2000 American Institute of Physics.

Zhang, A. P. [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States); Dang, G. [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States); Ren, F. [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States); Han, J. [Sandia National Laboratories, Albuquerque, New Mexico 87195 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87195 (United States); Polyakov, A. Y. [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation)] [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation); Smirnov, N. B. [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation)] [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation); Govorkov, A. V. [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation)] [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation); Redwing, J. M. [Epitronics, Phoenix, Arizona 85027 (United States)] [Epitronics, Phoenix, Arizona 85027 (United States); Cho, H. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Pearton, S. J. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)

2000-06-19T23:59:59.000Z

353

Room-temperature diluted magnetic semiconductors p-(Ga,Ni)N  

SciTech Connect

High concentration (5 at. %) Ni was incorporated into a chemical vapor deposition-grown GaN film by using a thin protecting Ni layer on top of the GaN film during ion implantation. After etching off the protecting layer, subsequent annealing up to 800 deg. C under flowing N{sub 2} resulted in a p-type GaN with apparent ferromagnetic behavior up to {approx}320 K. In addition, the ferromagnetic behavior became more manifest with increasing annealing temperature that increases hole concentration. No presence of any other second phases nor clusters in the Ni-implanted region was identifiable, at least to the 0.2 nm point-to-point resolution of high resolution transmission electron microscopy. This novel indirect implantation process that being easy to implement appears promising for attaining room-temperature diluted magnetic semiconductors which are applicable to magnetotransport, magneto-optical and spintronics devices, among others.

Huang, R.-T.; Hsu, C.-F.; Kai, J.-J.; Chen, F.-R.; Chin, T.-S. [Department of Engineering and System Science, National Tsing-Hua University, Hsinchu 300, Taiwan (China); Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 300, Taiwan (China)

2005-11-14T23:59:59.000Z

354

Science Highlights 2005  

NLE Websites -- All DOE Office Websites (Extended Search)

5 5 Photo: Gan Molecules Defect-Driven Magnetism in Mn-doped GaN DECEMBER 12, 2005 Semiconductors doped with magnetic elements are candidates as room-temperature magnetic semiconductors with potential use as new low-power-consumption electronics, non-volatile memories, and field-configurable logic devices. Research at the U.S. Department of Energy's Advanced Photon Source is producing new and important information about Mn-doped GaN. Photo: Membrane Image How a Cellular "Spacecraft" Opens its Airlock DECEMBER 9, 2005 Researchers using a Structural Biology Center beamline at the APS have clarified the connection between the tiny hatchways that allow nutrients to pass into our cells and the steps by which they use a cell's energy to permit or deny materials entry into the interior of the cell from

355

Notices  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

519 Federal Register 519 Federal Register / Vol. 77, No. 118 / Tuesday, June 19, 2012 / Notices send you a Grant Award Notification (GAN). We may notify you informally, also. If your application is not evaluated or not selected for funding, we notify you. 2. Administrative and National Policy Requirements: We identify administrative and national policy requirements in the application package and reference these and other requirements in the Applicable Regulations section of this notice. We reference the regulations outlining the terms and conditions of an award in the Applicable Regulations section of this notice and include these and other specific conditions in the GAN. The GAN also incorporates your approved application as part of your binding commitments under the grant.

356

Mobile Facility  

NLE Websites -- All DOE Office Websites (Extended Search)

Facility Facility AMF Information Science Architecture Baseline Instruments AMF1 AMF2 AMF3 Data Operations AMF Fact Sheet Images Contacts AMF Deployments Hyytiälä, Finland, 2014 Manacapuru, Brazil, 2014 Oliktok Point, Alaska, 2013 Los Angeles, California, to Honolulu, Hawaii, 2012 Cape Cod, Massachusetts, 2012 Gan Island, Maldives, 2011 Ganges Valley, India, 2011 Steamboat Springs, Colorado, 2010 Graciosa Island, Azores, 2009-2010 Shouxian, China, 2008 Black Forest, Germany, 2007 Niamey, Niger, 2006 Point Reyes, California, 2005 Mobile Facilities Pictured here in Gan, the second mobile facility is configured in a standard layout. Pictured here in Gan, the second mobile facility is configured in a standard layout. To explore science questions beyond those addressed by ARM's fixed sites at

357

Compact, Interactive Electric Vehicle Charger: Gallium-Nitride Switch Technology for Bi-directional Battery-to-Grid Charger Applications  

SciTech Connect

ADEPT Project: HRL Laboratories is using gallium nitride (GaN) semiconductors to create battery chargers for electric vehicles (EVs) that are more compact and efficient than traditional EV chargers. Reducing the size and weight of the battery charger is important because it would help improve the overall performance of the EV. GaN semiconductors process electricity faster than the silicon semiconductors used in most conventional EV battery chargers. These high-speed semiconductors can be paired with lighter-weight electrical circuit components, which helps decrease the overall weight of the EV battery charger. HRL Laboratories is combining the performance advantages of GaN semiconductors with an innovative, interactive battery-to-grid energy distribution design. This design would support 2-way power flow, enabling EV battery chargers to not only draw energy from the power grid, but also store and feed energy back into it.

2010-10-01T23:59:59.000Z

358

Airport sustainability encompasses a wide variety of airport management and  

E-Print Network (OSTI)

of these measures are replac- ing an old or inefficient water heater or replacing incandescent light bulbs of existing buildings and ground vehicles to collecting water and managing waste. Assessing the sustainability is to consider renewable energies. Solar photovoltaic (PV), which uses panels to absorb solar energy, is prob

Blanchette, Robert A.

359

Growth and characterizations of semipolar (1122) InN  

SciTech Connect

We report on metal-organic vapor phase epitaxial growth of (1122) InN on (1122) GaN templates on m-plane (1010) sapphire substrates. The in-plane relationship of the (1122) InN samples is [1123]{sub InN} Double-Vertical-Line Double-Vertical-Line [0001]{sub sapphire} and [1100]{sub InN} Double-Vertical-Line Double-Vertical-Line [1210]{sub sapphire}, replicating the in-plane relationship of the (1122) GaN templates. The surface of the (1122) InN samples and the (1122) GaN templates shows an undulation along [1100]{sub InN,GaN}, which is attributed to anisotropic diffusion of indium/gallium atoms on the (1122) surfaces. The growth rate of the (1122) InN layers was 3-4 times lower compared to c-plane (0001) InN. High resolution transmission electron microscopy showed a relaxed interface between the (1122) InN layers and the (1122) GaN templates, consistent with x-ray diffraction results. Basal plane stacking faults were found in the (1122) GaN templates but they were terminated at the InN/(1122) GaN interface due to the presence of misfit dislocations along the entire InN/GaN interface. The misfit dislocations were contributed to the fully relaxation and the tilts of the (1122) InN layers. X-ray photoelectron spectroscopy was used to determine the polarity of the grown (1122) InN sample, indicating an In-polar (1122) InN. The valence band maximum was determined to be at (1.7 {+-} 0.1) eV for the (1122) InN sample, comparable to In-polar c-plane InN.

Dinh, Duc V.; Skuridina, D.; Solopow, S.; Frentrup, M.; Pristovsek, M.; Vogt, P.; Kneissl, M. [Institute of Solid State Physics, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany); Ivaldi, F.; Kret, S.; Szczepanska, A. [Institute of Physics, Polish Academy of Science, Al. Lotnikow 32/46, 02668 Warsaw (Poland)

2012-07-01T23:59:59.000Z

360

ST. LOUIS AIRPORT/ HAZELWOOD INTERIM  

E-Print Network (OSTI)

DESCRIPTION EPA Region 7 09/01/2010 City: Approximately 15 miles northwest of downtown Lambert/St. Louis) and later the Atomic Energy Commission (AEC). The transfer of process residues from downtown to sites near

Index
Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
361

Airport, Transport & Hotel Information | ORNL  

NLE Websites -- All DOE Office Websites (Extended Search)

Departures - Live departure schedule Airlines - Links to individual airlines' websites Car Rental Flight Schedules Hotels - Area hotels Parking - Rates and suggestions Taxi -...

362

Issues associated with the metalorganic chemical vapor deposition of ScGaN and YGaN alloys.  

SciTech Connect

The most energy efficient solid state white light source will likely be a combination of individually efficient red, green, and blue LED. For any multi-color approach to be successful the efficiency of deep green LEDs must be significantly improved. While traditional approaches to improve InGaN materials have yielded incremental success, we proposed a novel approach using group IIIA and IIIB nitride semiconductors to produce efficient green and high wavelength LEDs. To obtain longer wavelength LEDs in the nitrides, we attempted to combine scandium (Sc) and yttrium (Y) with gallium (Ga) to produce ScGaN and YGaN for the quantum well (QW) active regions. Based on linear extrapolation of the proposed bandgaps of ScN (2.15 eV), YN (0.8 eV) and GaN (3.4 eV), we expected that LEDs could be fabricated from the UV (410 nm) to the IR (1600 nm), and therefore cover all visible wavelengths. The growth of these novel alloys potentially provided several advantages over the more traditional InGaN QW regions including: higher growth temperatures more compatible with GaN growth, closer lattice matching to GaN, and reduced phase separation than is commonly observed in InGaN growth. One drawback to using ScGaN and YGaN films as the active regions in LEDs is that little research has been conducted on their growth, specifically, are there metalorganic precursors that are suitable for growth, are the bandgaps direct or indirect, can the materials be grown directly on GaN with a minimal defect formation, as well as other issues related to growth. The major impediment to the growth of ScGaN and YGaN alloys was the low volatility of metalorganic precursors. Despite this impediment some progress was made in incorporation of Sc and Y into GaN which is detailed in this report. Primarily, we were able to incorporate up to 5 x 10{sup 18} cm{sup -3} Y atoms into a GaN film, which are far below the alloy concentrations needed to evaluate the YGaN optical properties. After a no-cost extension was granted on this program, an additional more 'liquid-like' Sc precursor was evaluated and the nitridation of Sc metals on GaN were investigated. Using the Sc precursor, dopant level quantities of Sc were incorporated into GaN, thereby concluding the growth of ScGaN and YGaN films. Our remaining time during the no-cost extension was focused on pulsed laser deposition of Sc metal films on GaN, followed by nitridation in the MOCVD reactor to form ScN. Finally, GaN films were deposited on the ScN thin films in order to study possible GaN dislocation reduction.

Koleske, Daniel David; Knapp, James Arthur; Lee, Stephen Roger; Crawford, Mary Hagerott; Creighton, James Randall; Cross, Karen Charlene; Thaler, Gerald

2009-07-01T23:59:59.000Z

363

Organization USPostagePaid  

E-Print Network (OSTI)

, California, where he is working on developing novel integrated analysis systems on a chip. Previously he associate at the Center for Integrated Systems at Stanford University. In 1982, he was awarded a Doctorate of VCSELs for HP's fiberoptic tranceiver product line, and later to GaN materials and device technology

Wu, Junqiao

364

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 17, NO. 4, JULY/AUGUST 2011 971 Highly Efficient and Bright LEDs Overgrown  

E-Print Network (OSTI)

, and Chun-Yen Chang, Life Fellow, IEEE Abstract--We presented a study of high-performance GaN- based light-sectional scanning electron microscopy. It can increase the light-extraction efficiency due to additional light blue shift and great enhancement of the light output (70% at 20 mA) compared with the conventional LEDs

Meng, Hsin-Fei

365

B49: Typical Microstructures of Flash-Sintered 8 Mol % YSZ  

Science Conference Proceedings (OSTI)

A16: Analysis of Surface Physic-Chemical Properties of Titanium Heat Treated · A17: Morphology Variations of GaN Nanowires and Devices ... A21: Synthesis and Characterization of ?-Tricalcium Phosphate / Glutamic acid ... B13: Ionic Conductivity of Doped Ceria Thin Films Using Different Electrode Configurations.

366

F3: Microstructural and Mechanical Properties of Fe-30Mn - 2.3Si  

Science Conference Proceedings (OSTI)

A16: Analysis of Surface Physic-Chemical Properties of Titanium Heat Treated · A17: Morphology Variations of GaN Nanowires and Devices ... A21: Synthesis and Characterization of ?-Tricalcium Phosphate / Glutamic acid ... B13: Ionic Conductivity of Doped Ceria Thin Films Using Different Electrode Configurations.

367

B8: Monitoring Oxygen Diffusion in Gd-Doped Ceria by Null ...  

Science Conference Proceedings (OSTI)

A16: Analysis of Surface Physic-Chemical Properties of Titanium Heat Treated · A17: Morphology Variations of GaN Nanowires and Devices ... A21: Synthesis and Characterization of ?-Tricalcium Phosphate / Glutamic acid ... B13: Ionic Conductivity of Doped Ceria Thin Films Using Different Electrode Configurations.

368

F5: Study on the Change Law of Microstructure of T91 Steel During ...  

Science Conference Proceedings (OSTI)

A16: Analysis of Surface Physic-Chemical Properties of Titanium Heat Treated · A17: Morphology Variations of GaN Nanowires and Devices ... A21: Synthesis and Characterization of ?-Tricalcium Phosphate / Glutamic acid ... B13: Ionic Conductivity of Doped Ceria Thin Films Using Different Electrode Configurations.

369

Not Your Grandma's Quilt Researchers develop technique to keep cool high-power semiconductor  

E-Print Network (OSTI)

devices used in wireless applications, traffic lights and electric cars By Sean Nealon On MAY 8, 2012 in everything from traffic lights to electric cars. Gallium Nitride (GaN), a semiconductor material found by the Nano-Device Laboratory research group led byAlexander Balandin, professor of electrical engineering

370

stanislaw M. Ulam was one of a group of distinguished Polish  

E-Print Network (OSTI)

by a lively group of mathematicians and be- gan to spend more and more time with them. One of the people who-negative, decreas- ing function on the positive portion of the real line, build stairs of equal depth (Fig. 1 inter- esting, not just tools. Consequently most of his work has a directness similar to the directness

371

Materials science issues and structural studies of topical  

E-Print Network (OSTI)

3.25 eV, GaN basis + some dies give visible light LED more energy efficient than incandescent bulbs eV m = ][ 6 ][ 10 µ ][ 24.1 eVBG : wavelength [µm], BG: band gap [eV], c: velocity of light, h: Planck's constant, e: elemental charge [all three in SI units] ultraviolet light: extra large band gaps

Moeck, Peter

372

University of Southern California Mork Family  

E-Print Network (OSTI)

remarks 10:10 AM research talks 10:10 AM Hong Seok Choi Polymer-coated silica ultra-high-Q microresonators Tsotsis) 11:40 AM Ting-Wei Yeh GaN nanorod arrays for efficient LEDs grown by selective area growth (with Graduate student posters Jingran Ma Real-time model predictive control for energy and demand optimization

Southern California, University of

373

REMOVAL OF ABDOMINAL WALL FOR 3D VISUALIZATION AND SEGMENTATION OF ORGANS IN CT VOLUME  

E-Print Network (OSTI)

, the existence of the abdominal wall which consists of skin, fat, muscle and bones prevents the viewer from examining the or- gans in the volume rendered 3D image. A common solution in practice is to apply a transfer function for the user to ad- just the opacity of the rendered volume. Although adjusting transparency

Leow, Wee Kheng

374

Diffusion, Uptake and Release of Hydrogen in p-type Gallium Nitride: Theory and Experiment  

DOE Green Energy (OSTI)

The diffusion, uptake, and release of H in p-type GaN are modeled employing state energies from density-function theory and compared with measurements of deuterium uptake and release using nuclear-reaction analysis. Good semiquantitative agreement is found when account is taken of a surface permeation barrier.

MYERS JR.,SAMUEL M.; WRIGHT,ALAN F.; PETERSEN,GARY A.; WAMPLER,WILLIAM R.; SEAGER,CARLETON H.; CRAWFORD,MARY H.; HAN,JUNG

2000-06-27T23:59:59.000Z

375

436 IEEE/ASME TRANSACTIONS ON MECHATRONICS, VOL. 9, NO. 2, JUNE 2004 Torque and Velocity Ripple Elimination of AC  

E-Print Network (OSTI)

Elimination of AC Permanent Magnet Motor Control Systems Using the Internal Model Principle Wai-Chuen Gan and velocity ripple elimination in AC permanent magnet (PM) motor control systems. The torque ripples caused-free output response. Index Terms--AC permanent magnet motor, gain scheduled (GS) speed regulators, internal

Qiu, Li

376

Optical and electrical properties of III-V nitride wide bandgap semiconductors. Annual report, April 1, 1997--May 31, 1998  

SciTech Connect

The objectives of this project were to investigate the optical and electrical properties of III-nitride wide bandgap semiconductors (GaN, InGaN, AlGaN) and quantum wells, to understand the fundamental optical transitions and impurity properties of these materials, to study the physics components of GaN-based devices, and to provide input for new approaches toward the improvement of materials quality and the optimization of device design. We were the first group to employ transport measurement techniques on the persistent photoconductivity (PPC) state to study the impurity properties of III-nitrides. We were also one of the few research groups m in the world to employ picosecond time-resolved photoluminescence (PL) measurement technique to study mechanisms of optical transitions, LED emission, and lasing m in GaN materials. During this funding period, we have investigated a variety of GaN samples and structures grown by MBE as well as by MOCVD. We have also made a significant progress in MOCVD GaN materials growth. This report briefly discusses the following accomplishments: effects of deep level impurities in the AlGaN/GaN heterostructures; materials characterization of III-nitrides alloys; optical studies of III-nitride epilayers and quantum wells; fabrication and optical studies of III-nitride microdisk arrays; and materials growth by MOCVD.

1998-06-01T23:59:59.000Z

377

fiat luxF A L L 2 0 1 1 N O . 2 1 ANNUAL REPORT 2010-11 THE LIBRARY AT THE UNIVERSITY OF CALIFORNIA, BERKELEY  

E-Print Network (OSTI)

Robinson Furth Dr. Leontina Kelly Gallagher Shelby M. Gans David P. and Sheila S. Gardner Mr.William C Robert C. Herr Bruce and Joan Herriges William and Flora Hewlett Foundation Honorable and Mrs. David M. amd Leslie M. Zomalt HENRY MORSE STEPHENS $500 - $999 Mr.William M. Abbott Nancy and Abraham Adams Mr

California at Berkeley, University of

378

Seeding date and polymer seed coating effects on plant establishment and yield of fall-seeded  

E-Print Network (OSTI)

-seeded canola in the Northern Great Plains E. N. Johnson1, P. R. Miller2, R. E. Blackshaw3, Y. Gan4, K. N of fall-seeded canola in the Northern Great Plains. Can. J. Plant Sci. 84: 955­963. The time interval for planting fall-seeded Brassica napus L. canola in the Northern Great Plains is narrow, since seeding must

Lawrence, Rick L.

379

Nanofabrication of gallium nitride photonic crystal light-emitting diodes  

Science Conference Proceedings (OSTI)

We describe a comparison of nanofabrication technologies for the fabrication of 2D photonic crystal structures on GaN/InGaN blue LEDs. Such devices exhibit enhanced brightness and the possibility of controlling the angular emission profile of emitted ... Keywords: GaN dry-etching, Light-emitting diodes, Nanolithography, Photonic crystals

Ali Z. Khokhar; Keith Parsons; Graham Hubbard; Faiz Rahman; Douglas S. Macintyre; Chang Xiong; David Massoubre; Zheng Gong; Nigel P. Johnson; Richard M. De La Rue; Ian M. Watson; Erdan Gu; Martin D. Dawson; Steve J. Abbott; Martin D. B. Charlton; Martin Tillin

2010-11-01T23:59:59.000Z

380

High efficiency light emitting diode with anisotropically etched GaN-sapphire interface  

E-Print Network (OSTI)

High efficiency light emitting diode with anisotropically etched GaN- sapphire interface M. H. Lo and optimization of a light-emitting diode projection micro-stereolithography three-dimensional manufacturingGaN micro-light emitting diodes Appl. Phys. Lett. 101, 231110 (2012) A bright cadmium-free, hybrid organic

Index
Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
381

Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting  

E-Print Network (OSTI)

of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

Wetzel, Christian M.

382

Spontaneous emission in GaN/InGaN photonic crystal nanopillars  

E-Print Network (OSTI)

. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

Recanati, Catherine

383

Multicolor, High Efficiency, Nanotextured LEDs  

SciTech Connect

We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and green for Solid State Lighting applications. Accomplishments in the duration of the contract period include (i) heteroepitaxy of nitrogen-polar LEDs on sapphire, (ii) heteroepitaxy of semipolar (11{bar 2}2) green LEDs on sapphire, (iii) synthesis of quantum-dot loaded nanoporous GaN that emits white light without phosphor conversion, (iv) demonstration of the highest quality semipolar (11{bar 2}2) GaN on sapphire using orientation-controlled epitaxy, (v) synthesis of nanoscale GaN and InGaN medium, and (vi) development of a novel liftoff process for manufacturing GaN thin-film vertical LEDs. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

Jung Han; Arto Nurmikko

2011-09-30T23:59:59.000Z

384

*Corresponding author. Tel.: #1 805 893 3543; fax: #1 805 893 3262; e-mail: stacia@xanadu.ece.ucsb.edu.  

E-Print Network (OSTI)

N surface by a preflow of disilane. Their surface density is comparable to the dislocation density of the Ga) and ammonia. Disilane was used as n-type dopant. The growth temper- ature (¹ ) of the GaN : Si base layer

Bowers, John

385

Copyright owned by the author(s) under the terms of the Creative Commons Attribution-NonCommercial-ShareAlike Licence. http://pos.sissa.it Study of the radiation-hardness of VCSEL and PIN  

E-Print Network (OSTI)

. This provides a simple mechanism to recover from the radiation damage. 9th International Conference on Large the radiation exposure and simplify the detector construction. In fact, the electric signals from the front-NonCommercial-ShareAlike Licence. http://pos.sissa.it Study of the radiation-hardness of VCSEL and PIN K.K. Gan1 , W. Fernando, H

Gan, K. K.

386

Presence of 2DHG  

Science Conference Proceedings (OSTI)

The trend as obtained from the experimental data is well explained by ... AA2, O-H-Li-Complex in Hydrothermally Grown Single Crystalline ZnO ... BB4, Engineering Ferromagnetism in Gd-Doped GaN Two-Dimensional Electron Gases ... F1, Applications of SiC Power Devices – A Materials and Device Perspective.

387

Science in China Series D: Earth Sciences 2008 SCIENCE IN CHINA PRESS  

E-Print Network (OSTI)

Science in China Series D: Earth Sciences © 2008 SCIENCE IN CHINA PRESS Springer www in South China ZHANG ShiHong1 , JIANG GanQing2 , DONG Jin1 , HAN YiGui1 & WU HuaiChun1 1 State Key Laboratory of Geological Processes and Mineral Resources, China University of Geosciences, Beijing 100083

Jiang, Ganqing

388

Science in China Series D: Earth Sciences 2008 SCIENCE IN CHINA PRESS  

E-Print Network (OSTI)

Science in China Series D: Earth Sciences © 2008 SCIENCE IN CHINA PRESS Springer www Doushantuo basin in South China JIANG GanQing1 , ZHANG ShiHong2,3 , SHI XiaoYing2,3 & WANG XinQiang1,2 1 and Resources, China University of Geosciences, Beijing 100083, China; 3 State Key Laboratory of Geological

Jiang, Ganqing

389

Science in China Series D: Earth Sciences 2008 SCIENCE IN CHINA PRESS  

E-Print Network (OSTI)

Science in China Series D: Earth Sciences © 2008 SCIENCE IN CHINA PRESS Springer www.7 Ga) in North China: Implication for methane degassing from microbial mats SHI XiaoYing1,2 , JIANG GanQing3 , ZHANG ChuanHeng1 , GAO LinZhi4 & LIU Juan1 1 School of Earth Science and Resources, China

Jiang, Ganqing

390

Friday Morning Sessions (June 28) - TMS  

Science Conference Proceedings (OSTI)

In spite of the fact that both bulk GaAs and GaN have rather large band gaps (1.5 and 3.2 eV respectively), we find a significant narrowing of the bandgap in the ...

391

final program (pdf download)  

Science Conference Proceedings (OSTI)

Sep 17, 2007 ... comparison of the output power and efficiency to a GaN LED with truncated. ZnO pyramid on ..... size compared to blue light by second harmonic generation. ...... percent have been grown by plasma-assisted MBE on MOVPE-GaN/Al2O3 ...... Physico-Technical Institute, Russian Academy of Sciences.

392

FOR IMMEDIATE RELEASE: Sept. 10, 2012  

E-Print Network (OSTI)

for deliberately participating in illegal gun sales among their colleagues, and opinions on selected policy issues of information on retail commerce in firearms, links between legal and illegal gun sales, and policies designedFOR IMMEDIATE RELEASE: Sept. 10, 2012 MEDIA CONTACT: Carole Gan (916) 734-9047 GUN DEALERS

Leistikow, Bruce N.

393

FOR IMMEDIATE RELEASE: September 23, 2013  

E-Print Network (OSTI)

on the prevalence of illegal gun sales by other retailers. By wide margins, respondents endorsed three existing.gan@ucdmc.ucdavis.edu Garen Wintemute, MD, MPH gjwintemute@ucdavis.edu GUN RETAILERS STRONGLY SUPPORT EXPANDED CRITERIA FOR DENYING GUN PURCHASES, UC DAVIS SURVEY FINDS (SACRAMENTO, Calif.) -- A scientific survey of gun dealers

Leistikow, Bruce N.

394

DD10, Characterization of L2 1  

Science Conference Proceedings (OSTI)

E3, A Compensation Mechanism for Flexible and Electrically Stable ... EE2, Following Charge-Trapping Chemical Reactions in Pentacene Films by Selective Chemical .... on Polar, Nonpolar, and Semipolar GaN Orientations Grown by Ammonia MBE ... JJ5, The Electrical Nature of Structural Defects in InSb Synthesized by ...

395

Jill Ann Marshall The University of Texas, Austin  

E-Print Network (OSTI)

, R., Weaver, E.C. & Gans, D.M. (2010). Women and men of the Manhattan Project. The Physics Teacher, A.J. & Martin, H.T. (2010). Pre-service teachers' conceptions and enactments of Project Based Journal, 19(1), 45-76. Marshall, J.A., Pine, B. & Taylor, W.W.L (2007). INSPIRE: A VLF radio project

Lightsey, Glenn

396

Corrective Action Decision Document for Corrective Action Unit 230: Area 22 Sewage Lagoons and Corrective Action Unit 320: Area 22 Desert Rock Airport Strainer Box, Nevada Test Site, Nevada, Rev. 0  

SciTech Connect

This Corrective Action Decision Document identifies and rationalizes the U.S. Department of Energy, Nevada Operations Office's selection of a recommended corrective action alternative (CAA) appropriate to facilitate the closure of Corrective Action Unit (CAU) 230, Area 22 Sewage Lagoons, and CAU 320, Area 22 Desert Rock Airport Strainer Box, under the Federal Facility Agreement and Consent Order. Referred to as CAU 230/320, both CAUs are located at the Nevada Test Site (NTS) and comprise two Corrective Action Sites (CASs), 22-03-01 (Sewage Lagoons) and 22-99-01 (Strainer Box). The Area 22 Sewage Lagoons site also includes a buried Imhoff Tank, sludge bed, and associated sewer piping. A September 1999 corrective action investigation identified the only contaminant of concern above preliminary action levels at this CAU (i.e., total petroleum hydrocarbons as diesel-range organics). During this same investigation, three Corrective Action Objectives (CAOs) were identified to prevent or mitigate exposure to subsurface debris and contaminated soil. Based on these CAOs, a review of existing data, future use, and current operations in Area 22 of the NTS, three CAAs were developed for consideration: Alternative 1 - No Further Action, Alternative 2 - Closure in Place with Administrative Controls, and Alternative 3 - Excavation and Removal. These alternatives were evaluated based on four general corrective action standards and five remedy selection decision factors. Alternative 3 was chosen on technical merit as the preferred alternative for CAU 230/320. This alternative was judged to meet all applicable state and federal regulations for closure of the site and will eliminate potential future exposure pathways to the buried debris and contaminated soils at both of the CASs within Area 22.

U.S. Department of Energy, Nevada Operations Office

2000-04-20T23:59:59.000Z

397

Microsoft Word - Airport_EA_Final.doc  

National Nuclear Security Administration (NNSA)

Statement for the Conveyance and Transfer of Certain Land Tracts Administered by the U.S. Department of Energy and Located at Los Alamos National Laboratory......

398

Airports and the General Conformity Process  

E-Print Network (OSTI)

diesel) include compressed natural gas, liquefied natural16 on order and 49 compressed natural gas construction and

Amin, Ratna S.

2001-01-01T23:59:59.000Z

399

Oak Ridge National Laboratory - Airport Information  

NLE Websites -- All DOE Office Websites (Extended Search)

Oak Ridge National Laboratory Search Go Find People Contact Site Index Comments Home News News Releases Story Tips Features Contacts ORNL Review Magazine ORNL in the News...

400

Airport risk assessment: a probabilistic approach  

Science Conference Proceedings (OSTI)

Risk reduction is one of the key objectives pursued by transport safety policies. Particularly, the formulation and implementation of transport safety policies needs the systematic assessment of the risks, the specification of residual risk targets and ... Keywords: risk assessment methodology, risk management, safety civil aviation

L. Guerra; T. Murino; E. Romano

2008-05-01T23:59:59.000Z

Index
Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
401

OR_Knox_AirportMap_2010  

NLE Websites -- All DOE Office Websites (Extended Search)

Chattanooga (I-75) To Nashville (I-40W) Pellissippi State Community College OAK RIDGE KNOXVILLE IN T E R S T A T E -4 0 I N T E R S T A T E - 7 5 I - 4 0 7 5 I - 4 0 7 5 I - 4...

402

ARM - Feature Stories and Releases Article  

NLE Websites -- All DOE Office Websites (Extended Search)

November 16, 2010 [Feature Stories and Releases] November 16, 2010 [Feature Stories and Releases] Future Field Campaigns Span Atlantic Ocean to Indian Ocean Bookmark and Share Each year, the ARM Climate Research Facility reviews proposals to use key components of the Facility for extended field campaigns. The Department of Energy recently announced the selection of major ARM field campaigns that will take place from 2011 through 2014. Studies led by principal investigators Chuck Long, Carl Berkowitz, and Scot Martin will examine atmospheric circulation in the tropics, and aerosol-cloud interactions in the North Atlantic and Amazon Basin, respectively. ARM MJO Investigation Experiment on Gan Island (AMIE-Gan). Led by Chuck Long of Pacific Northwest National Laboratory, this campaign is part of a large international research effort involving two island-based and two

403

VGAN_R3_070102  

NLE Websites -- All DOE Office Websites (Extended Search)

3 3 June 2002 Virtual Global Accelerator Network (VGAN) Raymond S. Larsen Stanford Linear Accelerator Center Stanford University Menlo Park, California Abstract: The concept of a Global Accelerator Network (GAN) has been proposed by key members of ICFA as a cornerstone of a future International Linear Collider. GAN would provide a tool for the participants of an international collaboration to participate in the actual running of the machine from different parts of the world. Some technical experts view the concept as technologically trivial, and instead point out the significant sociological organizational and administrative problems to be surmounted in creating a truly workable system. This note proposes that many real issues can be explored by building a simulator

404

Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

1998-10-14T23:59:59.000Z

405

Low-Cost Substrates for High-Performance Nanorod Array LEDs  

SciTech Connect

The completed project, entitled â??Low-Cost Substrates for High-Performance Nanorod LEDs,â? targeted the goal of a phosphor-free nanorod-based white LED with IQE > 50% across the spectrum from 450 nm to 600 nm on metallized silicon substrates. The principal achievements of this project included: â?¢ Demonstration of (In,Ga)N nanopyramid heterostructures by a conventional OMVPE process. â?¢ Verification of complete filtering of threading dislocations to yield dislocation-free pyramidal heterostructures. â?¢ Demonstration of electroluminescence with a peak wavelength of ~600 nm from an (In,Ga)N nanopyramid array LED. â?¢ Development of a reflective ZrN/AlN buffer layer for epitaxial growth of GaN films and GaN nanopyramid arrays on (111)Si.

Sands, Timothy; Stach, Eric; Garcia, Edwin

2009-04-30T23:59:59.000Z

406

Epitaxial Growth of GaN-based LEDs on Simple Sacrificial Substrates  

SciTech Connect

The objective of this project is to produce alternative substrate technologies for GaN-based LEDs by developing an ALD interlayer of Al{sub 2}O{sub 3} on sacrificial substrates such as ZnO and Si. A sacrificial substrate is used for device growth that can easily be removed using a wet chemical etchant leaving only the thin GaN epi-layer. After substrate removal, the GaN LED chip can then be mounted in several different ways to a metal heat sink/reflector and light extraction techniques can then be applied to the chip and compared for performance. Success in this work will lead to high efficiency LED devices with a simple low cost fabrication method and high product yield as stated by DOE goals for its solid state lighting portfolio.

Ian Ferguson; Chris Summers

2009-12-31T23:59:59.000Z

407

Shikun Binui Arison Group | Open Energy Information  

Open Energy Info (EERE)

Shikun Binui Arison Group Shikun Binui Arison Group Jump to: navigation, search Name Shikun & Binui Arison Group Place Ramat Gan, Israel Zip 55215 Product String representation "Shikun & Binui ... gy and ecology." is too long. References Shikun & Binui Arison Group[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Shikun & Binui Arison Group is a company located in Ramat Gan, Israel . References ↑ "Shikun & Binui Arison Group" Retrieved from "http://en.openei.org/w/index.php?title=Shikun_Binui_Arison_Group&oldid=350967" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes Special pages Printable version

408

ARM MJO Investigation Experiment on  

NLE Websites -- All DOE Office Websites (Extended Search)

5 5 ARM MJO Investigation Experiment on Gan Island (AMIE-Gan) Science Plan October 2011-March 2012 C Long Principal Investigator A Del Genio P May M Deng S McFarlane X Fu P Minnis W Gustafson C Schumacher R Houze A Vogelmann C Jakob Y Wang M Jensen P Webster R Johnson S Xie X Liu C Zhang E Luke April 2011 DISCLAIMER This report was prepared as an account of work sponsored by the U.S. Government. Neither the United States nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights.

409

CX-009000: Categorical Exclusion Determination | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0: Categorical Exclusion Determination 0: Categorical Exclusion Determination CX-009000: Categorical Exclusion Determination "High Quality, Low Cost Bulk Gallium Nitride (GaN) Substrates Grown by the Electrochemical Solution Growth Method CX(s) Applied: A9, B3.6 Date: 08/20/2012 Location(s): Missouri Offices(s): Golden Field Office The U.S. Department of Energy (DOE) is proposing to provide federal funding to MEMC Electronic Materials, Inc. MEMC would conduct research and development activities for a two phase project to develop a new process method for growing large bulk gallium nitrate (GaN) crystals at low cost with improved functional properties." CX-009000.pdf More Documents & Publications CX-000845: Categorical Exclusion Determination Energy Storage Systems 2010 Update Conference Presentations - Day 3,

410

Categorical Exclusion Determinations: Arkansas | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Arkansas Arkansas Categorical Exclusion Determinations: Arkansas Location Categorical Exclusion Determinations issued for actions in Arkansas. DOCUMENTS AVAILABLE FOR DOWNLOAD September 16, 2013 CX-010974: Categorical Exclusion Determination Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory September 16, 2013 CX-010973: Categorical Exclusion Determination Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory

411

Solid-State Lighting Issue 11: Selected Business & Technology News  

NLE Websites -- All DOE Office Websites (Extended Search)

1: BUSINESS AND TECHNOLOGY NEWS 1: BUSINESS AND TECHNOLOGY NEWS (Mid-October 2001 to early February 2002) A selection of news appears in this section. Where possible, links to full-text articles and press releases have been included in the abstracts. Click on the links in the table below to go directly to the abstract. Table of Contents: Business and Technology News · Arima Optoelectronics will expand ultra-high-brightness LED production. · AXT producing brighter AlInGaN HB-LEDs; company expanding fab facilities in China. · BMDO changing its name to the Missile Defense Agency (MDA). · Brown University/Agilent/Lumileds researchers create a monolithic dual-wavelength InGaN LED. · Cermet receives BMDO contracts to develop bulk GaN substrate and GaN FET technology.

412

Document  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

720 Federal Register 720 Federal Register / Vol. 75, No. 117 / Friday, June 18, 2010 / Notices We reference the regulations outlining the terms and conditions of an award in the Applicable Regulations section of this notice and include these and other specific conditions in the GAN. The GAN also incorporates your approved application as part of your binding commitments under the grant. 3. Grant Administration: Projects funded under this competition are encouraged to budget for a two-day meeting for project directors to be held annually in Washington, DC. 4. Reporting: At the end of your project period, you must submit a final performance report, including financial information, as directed by the Secretary. If you receive a multi-year award, you must submit an annual

413

ARM - PI Product - Combined Retrieval, Microphysical Retrievals & Heating  

NLE Websites -- All DOE Office Websites (Extended Search)

ProductsCombined Retrieval, Microphysical Retrievals & ProductsCombined Retrieval, Microphysical Retrievals & Heating Rates Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send PI Product : Combined Retrieval, Microphysical Retrievals & Heating Rates 2011.10.11 - 2012.02.07 Site(s) GAN General Description Microphysical retrievals and heating rates from the AMIE/Gan deployment using the PNNL Combined Retrieval. The PNNL Combined Remote Sensor retrieval algorithm (CombRet) is designed to retrieve cloud and precipitation properties for all sky conditions. The retrieval is based on a combination of several previously published retrievals, with new additions related to the retrieval of cloud microphysical properties when only one instrument is able to detect cloud (i.e. radar only or lidar only).

414

ICP dry etching of III-V nitrides  

DOE Green Energy (OSTI)

Inductively coupled plasma etching of GaN, AlN, InN, InGaN and InAlN was investigated in CH{sub 4}/H{sub 2}/Ar plasmas as a function of dc bias, and ICP power. The etch rates were generally quite low, as is common for III-nitrides in CH{sub 4} based chemistries. The etch rates increased with increasing dc bias. At low rf power (150 W), the etch rates increased with increasing ICP power, while at 350 W rf power, a peak was found between 500 and 750 W ICP power. The etched surfaces were found to be smooth, while selectivities of etch were {le} 6 for InN over GaN, AlN, InGaN and InAlN under all conditions.

Vartuli, C.B.; Lee, J.W.; MacKenzie, J.D. [Univ. of Florida, Gainesville, FL (United States)] [and others

1997-10-01T23:59:59.000Z

415

Power electronics reliability.  

Science Conference Proceedings (OSTI)

The project's goals are: (1) use experiments and modeling to investigate and characterize stress-related failure modes of post-silicon power electronic (PE) devices such as silicon carbide (SiC) and gallium nitride (GaN) switches; and (2) seek opportunities for condition monitoring (CM) and prognostics and health management (PHM) to further enhance the reliability of power electronics devices and equipment. CM - detect anomalies and diagnose problems that require maintenance. PHM - track damage growth, predict time to failure, and manage subsequent maintenance and operations in such a way to optimize overall system utility against cost. The benefits of CM/PHM are: (1) operate power conversion systems in ways that will preclude predicted failures; (2) reduce unscheduled downtime and thereby reduce costs; and (3) pioneering reliability in SiC and GaN.

Kaplar, Robert James; Brock, Reinhard C.; Marinella, Matthew; King, Michael Patrick; Stanley, James K.; Smith, Mark A.; Atcitty, Stanley

2010-10-01T23:59:59.000Z

416

Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction  

Science Conference Proceedings (OSTI)

Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy on the nonpolar side-facet of a vertically c-axis aligned heterostructure. It shows type-II band configuration with valence band offset of 1.63 {+-} 0.1 eV and conduction band offset of 1.61 {+-} 0.1 eV, respectively. Rectification behavior is clearly observed, with a ratio of forward-to-reverse current up to six orders of magnitude when the bias is applied across the p-n junction.

Lee, Kai-Hsuan; Chen, Chia-Hao [Nano Science Group, National Synchrotron Radiation Research Center, Hsin-Ann Rd. 101, 30076 Hsinchu, Taiwan (China)] [Nano Science Group, National Synchrotron Radiation Research Center, Hsin-Ann Rd. 101, 30076 Hsinchu, Taiwan (China); Chang, Ping-Chuan [Department of Electro-Optical Engineering, Kun Shan University, Dawan Rd. 949, 71003 Tainan, Taiwan (China)] [Department of Electro-Optical Engineering, Kun Shan University, Dawan Rd. 949, 71003 Tainan, Taiwan (China); Chen, Tse-Pu; Chang, Sheng-Po; Chang, Shoou-Jinn [Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, University Rd. 1, 70101 Tainan, Taiwan (China)] [Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, University Rd. 1, 70101 Tainan, Taiwan (China); Shiu, Hung-Wei; Chang, Lo-Yueh [Nano Science Group, National Synchrotron Radiation Research Center, Hsin-Ann Rd. 101, 30076 Hsinchu, Taiwan (China) [Nano Science Group, National Synchrotron Radiation Research Center, Hsin-Ann Rd. 101, 30076 Hsinchu, Taiwan (China); Department of Physics, National Tsing Hua University, Kuang-Fu Rd. 101, 30013 Hsinchu, Taiwan (China)

2013-02-18T23:59:59.000Z

417

Nitride Based Insulated Gate Field Effect Transistors Broadband Center, ECSE and Physics, Computer, and Systems  

E-Print Network (OSTI)

for commercialization of GaN based electronics. [1 ] M. Asif Khan, J. N. Kuznia, A. R. Bhattarai, and D. P. Olson, Ga. 281, p.769 (1993) [2 ] M. Asif Khan, Michael S. Shur, Q. C. Chen, and J. N. Kuznia, Current, Bristol, 1995), p.459 [4 ] M. Asif Khan, X. Hu, G. Simin, A. Lunev, and J. Yang, R. Gaska and M. S. Shur

Lü, James Jian-Qiang

418

X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure  

SciTech Connect

High-resolution X-ray diffraction analysis and scanning confocal Raman spectroscopy are used to study the spatial distribution of strains in the In{sub x}Ga{sub 1-x}N/GaN layers and structural quality of these layers in a multilayered light-emitting diode structure produced by metal-organic chemical vapor deposition onto (0001)-oriented sapphire substrates. It is shown that elastic strains almost completely relax at the heterointerface between the thick GaN buffer layer and In{sub x}Ga{sub 1-x}N/GaN buffer superlattice. It is established that the GaN layers in the superlattice are in a stretched state, whereas the alloy layers are in a compressed state. In magnitude, the stretching strains in the GaN layers are lower than the compressive strains in the InGaN layers. It is shown that, as compared to the buffer layers, the layers of the superlattice contain a smaller number of dislocations and the distribution of dislocations is more randomly disordered. In micro-Raman studies on scanning through the thickness of the multilayered structure, direct evidence is obtained for the asymmetric gradient distributions of strains and crystal imperfections of the epitaxial nitride layers along the direction of growth. It is shown that the emission intensity of the In{sub x}Ga{sub 1-x}N quantum well is considerably (more than 30 times) higher than the emission intensity of the GaN barrier layers, suggesting the high efficiency of trapping of charge carriers by the quantum well.

Strelchuk, V. V., E-mail: Strelch@isp.kiev.ua; Kladko, V. P.; Avramenko, E. A.; Kolomys, O. F.; Safryuk, N. V.; Konakova, R. V. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine); Yavich, B. S., E-mail: byavich@soptel.ru [ZAO Svetlana-Optoelectronics (Russian Federation); Valakh, M. Ya.; Machulin, V. F.; Belyaev, A. E. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)

2010-09-15T23:59:59.000Z

419

Investigation of ZnO nanopillars fabrication in a new Thomas Swan close coupled showerhead MOCVD reactor  

Science Conference Proceedings (OSTI)

Self-organized ZnO nanopillars were grown on a-plane Al"2O"3 in a vertical MOCVD reactor using diethylzinc and N"2O as precursors. This is the very first Thomas Swan reactor that is specially designed for the growth of ZnO and GaN. The influence of different ... Keywords: MOCVD, MOVPE, Nanopillars, Zincoxide, ZnO

A. Behrends; A. Bakin; A. Waag

2009-02-01T23:59:59.000Z

420

Simulation of H behavior in p-GaN(Mg) at elevated temperatures  

DOE Green Energy (OSTI)

The behavior of H in p-GaN(Mg) at temperatures >400 C is modeled by using energies and vibrational frequencies from density-functional theory to parameterize transport and reaction equations. Predictions agree semiquantitatively with experiment for the solubility, uptake, and release of the H when account is taken of a surface barrier. Hydrogen is introduced into GaN during growth by metal-organic chemical vapor deposition (MOCVD) and subsequent device processing. This impurity affects electrical properties substantially, notably in p-type GaN doped with Mg where it reduces the effective acceptor concentration. Application of density-functional theory to the zincblende and wurtzite forms of GaN has indicated that dissociated H in interstitial solution assumes positive, neutral, and negative charge states. The neutral species is found to be less stable than one or the other of the charged states for all Fermi energies. Hydrogen is predicted to form a bound neutral complex with Mg, and a local vibrational mode ascribed to this complex has been observed. The authors are developing a unified mathematical description of the diffusion, reactions, uptake, and release of H in GaN at the elevated temperatures of growth and processing. Their treatment is based on zero-temperature energies from density functional theory. One objective is to assess the consistency of theory with experiment at a more quantitative level than previously. A further goal is prediction of H behavior pertinent to device processing. Herein is discussed aspects relating to p-type GaN(Mg).

Myers, S.M. Jr.; Wright, A.F.; Petersen, G.A.; Seager, C.H.; Crawford, M.H.; Wampler, W.R.; Han, J.

1999-12-07T23:59:59.000Z

Index
Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
421

2570 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 12, DECEMBER 2003 [1] J. K. Ho, C. S. Jong, C. C. Chiu, C. N. Huang, K. K. Shih, L. C. Chen,  

E-Print Network (OSTI)

light emitting diodes," IEEE J. Quantum. Electron., vol. 38, pp. 446­450, May 2002. [3] Y. L. Li, E. F-operation voltage of InGaN/ GaN light-emitting diodes by using a Mg-doped Al Ga N/GaN superlattice," IEEE Electron. Hirata, "Room-temperature operation at 333 nm of Al Ga N/ Al Ga N quantum-well light-emitting diodes

Hornsey, Richard

422

Hydrogen incorporation into III-V nitrides during processing  

DOE Green Energy (OSTI)

Hydrogen is readily incorporated into GaN and related alloys during wet and dry etching, chemical vapor deposition of dielectric overlayers, boiling in water and other process steps, in addition to its effects during MOCVD or MOMBE growth. The hydrogen is bound at defects or impurities and passivates their electrical activity. Reactivation occurs at 450-550{degrees}C, but evolution from the crystal requires much higher temperatures ({ge} 800{degrees}C).

Pearton, S.J.; Abernathy, C.R.; Vartuli, C.B. [Univ. of Florida, Gainesville, FL (United States)] [and others

1995-10-01T23:59:59.000Z

423

Synthesis of cadmium telluride quantum wires and the similarity of their band gaps to those of equidiameter cadmium telluride quantum dots  

E-Print Network (OSTI)

ZnSe (ZB) ZnTe (ZB) CdS (W) CdSe (W) CdTe (ZB) AlN (W) GaN (experimental results from CdSe and InP dot-wire comparisons,0.66 ± 0.03) 13,15 and CdSe (A wire :A dot = 0.53 ± 0.05) 14

Sun, Jianwei

2008-01-01T23:59:59.000Z

424

Neaton.ppt  

NLE Websites -- All DOE Office Websites (Extended Search)

691 WS2 9813 ZnTe 2176 CuCl 22914 GeSe 700 Cu3SbSe4 9814 NiS2 2282 AgCl 22922 ZnSb 753 BAs 10044 Mg2Sn 2343 AgI 22925 GaN 805 K3Sb 10159 Cd3P2 2441 TlCl 23167 SnO2 856 Cs3Sb...

425

AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of SiO2 dielectrics  

Science Conference Proceedings (OSTI)

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) based on InGaN/GaN multi-quantum-well (MQW) structure has been fabricated with SiO"2 dielectric deposited via photo-chemical vapor deposition (PHCVD) using a deuterium lamp ... Keywords: GaN, HEMT, MQW, Photo-chemical vapor deposition, SiO 2

Kai-Hsuan Lee; Ping-Chuan Chang; Shoou-Jinn Chang

2013-04-01T23:59:59.000Z

426

Opposite carrier dynamics and optical absorption characteristics under external electric  

E-Print Network (OSTI)

, and S. Nagahama, "High power InGaN single-quantum-well-structure blue and violet light-emitting diodes. Ichihara, and H. Takasu, "Dislocation-Free m-Plane InGaN/GaN Light-Emitting Diodes on m-Plane GaN Single, "Demonstration of nonpolar a-plane InGaN/GaN light emitting diode on r-plane sapphire substrate," Appl. Phys

Demir, Hilmi Volkan

427

Strain relaxation in GaN/Al{sub x}Ga{sub 1-x}N superlattices grown by plasma-assisted molecular-beam epitaxy  

SciTech Connect

We have investigated the misfit relaxation process in GaN/Al{sub x}Ga{sub 1-x}N (x = 0.1, 0.3, 0.44) superlattices (SL) deposited by plasma-assisted molecular beam epitaxy. The SLs under consideration were designed to achieve intersubband absorption in the mid-infrared spectral range. We have considered the case of growth on GaN (tensile stress) and on AlGaN (compressive stress) buffer layers, both deposited on GaN-on-sapphire templates. Using GaN buffer layers, the SL remains almost pseudomorphic for x = 0.1, 0.3, with edge-type threading dislocation densities below 9 x 10{sup 8} cm{sup -2} to 2 x 10{sup 9} cm{sup -2}. Increasing the Al mole fraction to 0.44, we observe an enhancement of misfit relaxation resulting in dislocation densities above 10{sup 10} cm{sup -2}. In the case of growth on AlGaN, strain relaxation is systematically stronger, with the corresponding increase in the dislocation density. In addition to the average relaxation trend of the SL, in situ measurements indicate a periodic fluctuation of the in-plane lattice parameter, which is explained by the different elastic response of the GaN and AlGaN surfaces to the Ga excess at the growth front. The results are compared with GaN/AlN SLs designed for near-infrared intersubband absorption.

Kotsar, Y.; Bellet-Amalric, E.; Das, A.; Monroy, E. [CEA-Grenoble, INAC/SP2M/NPSC, 17 Rue des Martyrs, 38054 Grenoble cedex 9 (France); Doisneau, B. [SIMaP, Grenoble INP, Domaine Universitaire, BP 75, 38402 Saint Martin d'Heres (France); Sarigiannidou, E. [LMGP, Grenoble INP, 3 Parvis Louis Neel, BP 257, 38016 Grenoble cedex 1 (France)

2011-08-01T23:59:59.000Z

428

Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride  

SciTech Connect

Al{sub 2}O{sub 3} films, HfO{sub 2} films, and HfO{sub 2}/Al{sub 2}O{sub 3} stacked structures were deposited on n-type, Ga-face, GaN wafers using plasma-enhanced atomic layer deposition (PEALD). The wafers were first treated with a wet-chemical clean to remove organics and an in-situ combined H{sub 2}/N{sub 2} plasma at 650 Degree-Sign C to remove residual carbon contamination, resulting in a clean, oxygen-terminated surface. This cleaning process produced slightly upward band bending of 0.1 eV. Additional 650 Degree-Sign C annealing after plasma cleaning increased the upward band bending by 0.2 eV. After the initial clean, high-k oxide films were deposited using oxygen PEALD at 140 Degree-Sign C. The valence band and conduction band offsets (VBOs and CBOs) of the Al{sub 2}O{sub 3}/GaN and HfO{sub 2}/GaN structures were deduced from in-situ x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). The valence band offsets were determined to be 1.8 and 1.4 eV, while the deduced conduction band offsets were 1.3 and 1.0 eV, respectively. These values are compared with the theoretical calculations based on the electron affinity model and charge neutrality level model. Moreover, subsequent annealing had little effect on these offsets; however, the GaN band bending did change depending on the annealing and processing. An Al{sub 2}O{sub 3} layer was investigated as an interfacial passivation layer (IPL), which, as results suggest, may lead to improved stability, performance, and reliability of HfO{sub 2}/IPL/GaN structures. The VBOs were {approx}0.1 and 1.3 eV, while the deduced CBOs were 0.6 and 1.1 eV for HfO{sub 2} with respect to Al{sub 2}O{sub 3} and GaN, respectively.

Yang Jialing; Eller, Brianna S.; Zhu Chiyu; England, Chris; Nemanich, Robert J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)

2012-09-01T23:59:59.000Z

429

Quest Hotel and Travel  

Science Conference Proceedings (OSTI)

... Waterfront. They serve BWI Airport/Amtrak, Penn Station Baltimore, Reagan National Airport and Dulles Airport. Airport ...

2013-02-21T23:59:59.000Z

430

Airport Drive, Missouri: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Drive, Missouri: Energy Resources Drive, Missouri: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 37.1425588°, -94.5107824° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":37.1425588,"lon":-94.5107824,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

431

Airport Road, Wyoming: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Road, Wyoming: Energy Resources Road, Wyoming: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 43.9932901°, -107.9492606° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":43.9932901,"lon":-107.9492606,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

432

Commuter airlines at Boston Logan International Airport: 1973-1981  

E-Print Network (OSTI)

Introduction: The adequacy of air transportation in New England has been the subject of intermittent debate-over the last twenty years-, culminating in the Civil Aeronautics Board's 1970-1974 "New England Service Investigation" ...

Ausrotas, Raymond A.

1981-01-01T23:59:59.000Z

433

Airport Road Addition, Texas: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Addition, Texas: Energy Resources Addition, Texas: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 27.2200435°, -98.0994483° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":27.2200435,"lon":-98.0994483,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

434

Hungary HEU Removal Airport Ops | National Nuclear Security Administra...  

National Nuclear Security Administration (NNSA)

Testimony Fact Sheets Newsletters Press Releases Speeches Events Social Media Video Gallery Photo Gallery NNSA Archive Federal Employment Apply for Our Jobs Our Jobs...

435

East Wind Events at Double Eagle II Airport  

E-Print Network (OSTI)

East canyon wind events are notorious for their strength and sudden onset in New Mexico’s Rio Grande Valley. Locations below canyons opening into the valley from the east commonly experience surface winds at speeds from 15 to 25 mph with gusts around 35 mph during east canyon wind events, and these gap winds can be much stronger depending on the strength of the

David L. Craft

2008-01-01T23:59:59.000Z

436

New airport liquid analysis system undergoes testing at Albuquerque...  

NLE Websites -- All DOE Office Websites (Extended Search)

sustainable energy sources, to plasma physics and new materials. Contact Nancy Ambrosiano Communications Office (505) 667-0471 Email MagViz technology from Los Alamos sorts out...

437

Alternative Fuels Data Center: Airport Shuttles Run on Propane  

Alternative Fuels and Advanced Vehicles Data Center (EERE)

more alternative fuel buses will be added in 2011, boosting the shuttle's role as a green welcoming committee for visitors to the Crescent City. Photo of building at New...

438

Cost Benefit Analysis Modeling Tool for Electric vs. ICE Airport...  

NLE Websites -- All DOE Office Websites (Extended Search)

own starting numbers and inflation estimates for each of the fuels. Battery and Charger Efficiencies-To handle the various efficiencies of batteries and charger systems, the...

439

NIST: Technical Bulletin on Airport Backscatter X-ray Systems  

Science Conference Proceedings (OSTI)

... The energy scale was calibrated using the 14.1 keV and 122.1 keV gamma energies from a ... measurements outside of the primary beam, due to ...

2011-03-04T23:59:59.000Z

440

Final report on LDRD project : outstanding challenges for AlGaInN MOCVD.  

Science Conference Proceedings (OSTI)

The AlGaInN material system is used for virtually all advanced solid state lighting and short wavelength optoelectronic devices. Although metal-organic chemical vapor deposition (MOCVD) has proven to be the workhorse deposition technique, several outstanding scientific and technical challenges remain, which hinder progress and keep RD&A costs high. The three most significant MOCVD challenges are: (1) Accurate temperature measurement; (2) Reliable and reproducible p-doping (Mg); and (3) Low dislocation density GaN material. To address challenge (1) we designed and tested (on reactor mockup) a multiwafer, dual wavelength, emissivity-correcting pyrometer (ECP) for AlGaInN MOCVD. This system simultaneously measures the reflectance (at 405 and 550 nm) and emissivity-corrected temperature for each individual wafer, with the platen signal entirely rejected. To address challenge (2) we measured the MgCp{sub 2} + NH{sub 3} adduct condensation phase diagram from 65-115 C, at typical MOCVD concentrations. Results indicate that it requires temperatures of 80-100 C in order to prevent MgCp{sub 2} + NH{sub 3} adduct condensation. Modification and testing of our research reactor will not be complete until FY2005. A new commercial Veeco reactor was installed in early FY2004, and after qualification growth experiments were conducted to improve the GaN quality using a delayed recovery technique, which addresses challenge (3). Using a delayed recovery technique, the dislocation densities determined from x-ray diffraction were reduced from 2 x 10{sup 9} cm{sup -2} to 4 x 10{sup 8} cm{sup -2}. We have also developed a model to simulate reflectance waveforms for GaN growth on sapphire.

Mitchell, Christine Charlotte; Follstaedt, David Martin; Russell, Michael J.; Cross, Karen Charlene; Wang, George T.; Creighton, James Randall; Allerman, Andrew Alan; Koleske, Daniel David; Lee, Stephen Roger; Coltrin, Michael Elliott

2005-03-01T23:59:59.000Z

Index
Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
441

2001: An Airspace Odyssey SUMMARY PROCEEDINGS OF THE 2001 AIRPORT NOISE SYMPOSIUM AND AIRPORT AIR QUALITY SYMPOSIUM  

E-Print Network (OSTI)

the use of advanced fan blade design and low noise fan exitreduce compressor fan noise, and the design of the nacelle

Gosling, Geoffrey D.

2001-01-01T23:59:59.000Z

442

Photonics poster small  

NLE Websites -- All DOE Office Websites (Extended Search)

Capabilities Capabilities in Solid State Lighting Research and Development of Light-Emitting Diodes (LEDs) and Organic Light-Emitting Diodes (OLEDs) Research & Development Applications Optical Measurements National Center for Electron Microscopy (NCEM) Advanced Light Source (ALS) Research in LEDs Spin casting of OLED Growing Low Defect GaN Crystals to reduce the density of structural defects Minigoniometer viewing LED Optical design of device and packaging Local Lattice Constants and Electric Fields LEDs Research & Development of OLEDs Measurement of spectral power distribution and efficacy of OLED Design and fabrication of luminaires: LED porchlight Electric fields and lattice parameters are simultaneously recorded by the side band and autocorrelation of an electron

443

Power Electronics Reliability Kick Off Meeting … Silicon Power Corp. & Sandia Labs  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Reliability Reliability 2010 Update Conference - DOE ESS Program November 4, 2010 Mark A. Smith - Systems Readiness & Sustainment Technologies Robert Kaplar, Matthew Marinella, Reinhard Brock, James Stanley, and Michael King - Radiation Hard CMOS Technology Stan Atcitty - Energy Infrastructure and Distributed Energy Resources Sandia National Laboratories Thanks to Dr. Imre Gyuk for supporting this work. Project Goals * Use experiments and modeling to investigate and characterize stress-related failure modes of post-silicon power electronic (PE) devices such as silicon carbide (SiC) and gallium nitride (GaN) switches. * Seek opportunities for condition monitoring (CM) and prognostics and health management (PHM) to further enhance the reliability of power electronics devices and equipment.

444

Structure and electronic properties of saturated and unsaturated gallium nitride nanotubes  

DOE Green Energy (OSTI)

The atomic and electronic structures of saturated and unsaturated GaN nanotubes along the [001] direction with (100) lateral facets are studied using first-principles calculations. Atomic relaxation of nanotubes shows that appreciable distortion occurs in the unsaturated nanotubes. All the nanotubes considered, including saturated and unsaturated ones, exhibit semiconducting, with a direct band gap. Surface states arisen from the threefold-coordinated N and Ga atoms at the lateral facets exist inside the bulk-like band gap. When the nanotubes saturated with hydrogen, these dangling bond bands are removed from the band gap, but the band gap decreases with increasing the wall thickness of the nanotubes.

Wang, Zhiguo; Wang, Shengjie; Li, Jingbo; Gao, Fei; Weber, William J.

2009-11-05T23:59:59.000Z

445

Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities  

E-Print Network (OSTI)

.2Ga0.8N (3.6 nm) stack. Both samples have129 been grown by metal organic vapor phase epitaxy (MOVPE)31130 on a 3 ?m thick GaN buffer deposited on a c-plane sapphire131 substrate. The first sample investigated here, i.e., the bare-132 MQW sample... in the two samples, given the very different 161 underlying layer morphology. More specifically, compared to 162 the bare-MQW sample, the QWs in the MC sample are more 163 compressively strained, and therefore their excitonic emission 164 line will appear...

Corfdir, Pierre; Levrat, Jacques; Rossbach, Georg; Butté, Raphaël; Feltin, Eric; Carlin, Jean-François; Christmann, Gabriel; Lefebvre, Pierre; Ganière, Jean-Daniel; Grandjean, Nicolas; Deveaud-Plédran, Benoît

2012-01-01T23:59:59.000Z

446

Development of White-Light Emitting Active Layers in Nitride Based Heterostructures for Phosphorless Solid State Lighting  

SciTech Connect

This report provides a summary of research activities carried out at the University of California, San Diego and Central Research of OSRAM SYLVANIA in Beverly, MA partially supported by a research contract from US Department of Energy, DE-FC26-04NT422274. The main objective of this project was to develop III-V nitrides activated by rare earth ions, RE{sup 3+}, which could eliminate the need for phosphors in nitride-based solid state light sources. The main idea was to convert electron-hole pairs injected into the active layer in a LED die to white light directly through transitions within the energy levels of the 4f{sup n}-manifold of RE{sup 3+}. We focused on the following materials: Eu{sup 3+}(red), Tb{sup 3+}(green), Er{sup 3+}(green), Dy{sup 3+}(yellow) and Tm{sup 3+}(blue) in AlN, GaN and alloys of AlN and GaN. Our strategy was to explore candidate materials in powder form first, and then study their behavior in thin films. Thin films of these materials were to be deposited on sapphire substrates using pulsed laser deposition (PLD) and metal organic vapor phase epitaxy (MOVPE). The photo- and cathode-luminescence measurements of these materials were used to investigate their suitability for white light generation. The project proceeded along this route with minor modifications needed to produce better materials and to expedite our progress towards the final goal. The project made the following accomplishments: (1) red emission from Eu{sup 3+}, green from Tb{sup 3+}, yellow from Dy{sup 3+} and blue from Tm{sup 3+} in AlN powders; (2) red emission from Eu{sup 3+} and green emission from Tb{sup 3+} in GaN powder; (3) red emission from Eu{sup 3+} in alloys of GaN and AlN; (4) green emission from Tb{sup 3+} in GaN thin films by PLD; (5) red emission from Eu{sup 3+} and Tb{sup 3+} in GaN thin films deposited by MOVPE; (6) energy transfer from host to RE{sup 3+}; (7) energy transfer from Tb{sup 3+} to Eu{sup 3+} in AlN powders; (8) emission from AlN powder samples codoped with (Eu{sup 3+} ,Tb{sup 3+} ) and (Dy{sup 3+}, Tm{sup 3+}); and (9) white emission from AlN codoped with Dy{sup 3+} and Tm{sup 3+}. We also extensively studied the stabilities of rare earth ions in GaN, and the nature of oxygen defects in GaN and its impact on the optical properties of the host material, using first principles method. Results from these theoretical calculations together with fluorescence measurements from the materials essentially proved the underlying concepts for generating white light using RE{sup 3+}-activated nitrides. For this project, we successfully built a horizontal MOVPE reactor and used it to deposit thin films of undoped and doped nitrides of GaN and InGaN, which is a very significant achievement. Since this reactor was designed and built by in-house experts, it could be easily modified and reassembled for specific research purposes. During this study, it was successfully modified for homogeneous distribution of rare earth ions in a deposited film. It will be an ideal tool for future research involving novel thin film material concepts. We examined carefully the suitability of various metal organic precursors for incorporating RE{sup 3+}. In order to avoid oxygen contamination, several oxygen-free RE{sup 3+} precursors were identified. Both oxygen-free and oxygen- containing metal organic precursors were used for certain rare earth ions (Eu{sup 3+}, Tb{sup 3+} and Er{sup 3+}). However, the suitability of any particular type of precursor for MOVPE deposition was not established during this study, and further study is needed. More intensive research in the future is needed to improve the film quality, and eliminate the separation of rare earth oxide phases during the deposition of thin films by MOVPE. The literature in the area of the chemistry of rare earth ions in nitrides is almost nonexistent, in spite of the significant research on luminescence of RE{sup 3+} in nitrides. Consequently, MOVPE as a method of deposition of RE{sup 3+}-activated nitrides is relatively unexplored. In the following sections of this report, the ou

Jan Talbot; Kailash Mishra

2007-12-31T23:59:59.000Z

447

The consequences of high injected carrier densities on carrier localisation and efficiency droop in InGaN/GaN quantum well structures  

E-Print Network (OSTI)

in the concentration of the randomly distributed In atoms on the optical properties of InGaN/GaN quantum wells. On the basis of this comparison of theory with experiment we attribute the reduction in the S- shape temperature dependence to the saturation... , the buffer layer was grown in a Thomas Swan 6x2” metalorganic vapour-phase epitaxy reactor using trimethyl gallium (TMG), silane (SiH4) and ammonia (NH3) as precursors, with hydrogen as the carrier gas. The GaN buffer layer was deposited at 1020 ºC on a...

Hammersley, S; Watson-Parris, D; Dawson, P; Godfrey, M; Badcock, T; Kappers, M; McAleese, C; Oliver, R; Humphreys, C

2012-04-18T23:59:59.000Z

448

Low Cost Production of InGaN for Next-Generation Photovoltaic Devices  

SciTech Connect

The goal of this project is to develop a low-cost and low-energy technology for production of photovoltaic devices based on InGaN materials. This project builds on the ongoing development by Structured Materials Industries (SMI), of novel thin film deposition technology for Group III-Nitride materials, which is capable of depositing Group-III nitride materials at significantly lower costs and significantly lower energy usage compared to conventional deposition techniques. During this project, SMI demonstrated deposition of GaN and InGaN films using metalorganic sources, and demonstrated compatibility of the process with standard substrate materials and hardware components.

Nick M. Sbrockey, Shangzhu Sun, Gary S. Tompa,

2012-07-09T23:59:59.000Z

449

Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy  

E-Print Network (OSTI)

by the two techniques. 7 2. Experiment The LD structure wafer was grown using a Veeco V80 MBE system, on a commercially available ultra-low TD density template consisting of ~10 µm of GaN grown by MOVPE on a sapphire substrate (Lumilog ULD template... of Europe to growth of the sample. SEB also thanks the Institute of Physics for the award of the annual Roy prize for a doctoral thesis on condensed matter and material physics, and the 20 Centre for Advanced Structural Ceramics for the award...

Bennett, Samantha; Smeeton, Tim; Saxey, David; Smith, George; Hooper, Stewart; Heffernan, Jonathan; Humphreys, Colin; Oliver, Rachel

2012-03-06T23:59:59.000Z

450

Cubic nitride templates  

DOE Patents (OSTI)

A polymer-assisted deposition process for deposition of epitaxial cubic metal nitride films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures under a suitable atmosphere to yield metal nitride films and the like. Such films can be used as templates for the development of high quality cubic GaN based electronic devices.

Burrell, Anthony K; McCleskey, Thomas Mark; Jia, Quanxi; Mueller, Alexander H; Luo, Hongmei

2013-04-30T23:59:59.000Z

451

Nanoscale Josephson Devices  

E-Print Network (OSTI)

, ferromagnetically (aligned ferromagnetic layers) FIB Focused Ion Beam GL Ginzburg-Landau GPIB General Purpose Interface Bus GMR Giant Magnetoresistance HTS High Temperature Superconductor I Insulator LED Light Emitting Diode LTS Low Temperature Superconductor MR... . The fabrication of intrinsic Josephson junctions in the high temperature superconductor Tl2Ba2CaCu2O8 will then be discussed, as well as Nb/MoSi2/Nb junctions, superconducting quantum interference devices, and finally GaN light emitting diodes. The work on Tl2Ba2...

Bell, Chris

452

Heating and cooling of a two-dimensional electron gas by terahertz radiation  

Science Conference Proceedings (OSTI)

The absorption of terahertz radiation by free charge carriers in n-type semiconductor quantum wells accompanied by the interaction of electrons with acoustic and optical phonons is studied. It is shown that intrasubband optical transitions can cause both heating and cooling of the electron gas. The cooling of charge carriers occurs in a certain temperature and radiation frequency region where light is most efficiently absorbed due to intrasubband transitions with emission of optical phonons. In GaAs quantum wells, the optical cooling of electrons occurs most efficiently at liquid nitrogen temperatures, while cooling is possible even at room temperature in GaN heterostructures.

Budkin, G. V.; Tarasenko, S. A., E-mail: tarasenko@coherent.ioffe.ru [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

2011-04-15T23:59:59.000Z

453

Al composition dependence of breakdown voltage in Al{sub x}Ga{sub 1-x}N Schottky rectifiers  

SciTech Connect

Planar geometry, lateral Schottky rectifiers were fabricated on high resistivity Al{sub x}Ga{sub 1-x}N (x=0-0.25) epitaxial layers grown on sapphire substrates. The reverse breakdown voltages of unpassivated devices increased with Al composition, varying from 2.3 kV for GaN to 4.3 kV for Al{sub 0.25}Ga{sub 0.75}N. The reverse current-voltage (I-V) characteristics showed classical Shockley-Read-Hall recombination as the dominant mechanism, with I{proportional_to}V{sup 0.5}. The reverse current density in all diodes was in the range 5-10x10{sup -6} A cm{sup -2} at 2 kV. The use of p{sup +} guard rings was effective in preventing premature edge breakdown and with optimum ring width increased V{sub B} from 2.3 to 3.1 kV in GaN diodes. (c) 2000 American Institute of Physics.

Zhang, A. P. [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States); Dang, G. [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States); Ren, F. [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States); Han, J. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Polyakov, A. Y. [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation)] [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation); Smirnov, N. B. [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation)] [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation); Govorkov, A. V. [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation)] [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation); Redwing, J. M. [Epitronics, Phoenix, Arizona 85027 (United States)] [Epitronics, Phoenix, Arizona 85027 (United States); Cao, X. A. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Pearton, S. J. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)

2000-03-27T23:59:59.000Z

454

Lateral Al{sub x}Ga{sub 1-x}N power rectifiers with 9.7 kV reverse breakdown voltage  

SciTech Connect

Al{sub x}Ga{sub 1-x}N (x=0--0.25) Schottky rectifiers were fabricated in a lateral geometry employing p{sup +}-implanted guard rings and rectifying contact overlap onto an SiO{sub 2} passivation layer. The reverse breakdown voltage (V{sub B}) increased with the spacing between Schottky and ohmic metal contacts, reaching 9700 V for Al{sub 0.25}Ga{sub 0.75}N and 6350 V for GaN, respectively, for 100 {mu}m gap spacing. Assuming lateral depletion, these values correspond to breakdown field strengths of {<=}9.67x10{sup 5}Vcm{sup -1}, which is roughly a factor of 20 lower than the theoretical maximum in bulk GaN. The figure of merit (V{sub B}){sup 2}/R{sub ON}, where R{sub ON} is the on-state resistance, was in the range 94--268 MWcm-2 for all the devices.

Zhang, A. P.; Johnson, J. W.; Ren, F.; Han, J.; Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Redwing, J. M.; Lee, K. P.; Pearton, S. J.

2001-02-05T23:59:59.000Z

455

Polarization-balanced design of AlN/GaN heterostructures: Application to double-barrier structures  

E-Print Network (OSTI)

Inversion- and depletion- regions generally form at the interfaces between doped leads (cladding layers) and the active region in wurtzite c-plane AlN/GaN heterostructures. The band bending in the depletion region can seriously impede perpendicular electronic transport. To counter the formation of these regions, we consider polarization-balanced designs of AlN/GaN heterostructures based on matching the applied bias to the internal voltage drop arising from spontaneous and piezeolectric fields. To retain freedom of design we use alloyed Al$_{\\tilde{x}}$Ga$_{1-\\tilde{x}}$N leads. Use of pure GaN leads requires huge voltage drops which severely restricts design. The alloy concentration $\\tilde{x}$ tunes the internal voltage drop over the structure. For short active regions comprised of AlN and GaN layers, we derive a simple relation between the applied bias, average alloy composition of the active region, and the alloy concentration of the leads. We study polarization-balanced designs for AlN barriers structures...

Berland, Kristian; Hyldgaard, Per

2011-01-01T23:59:59.000Z

456

P-type gallium nitride  

DOE Patents (OSTI)

Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

1997-08-12T23:59:59.000Z

457

Sacrificial template method of fabricating a nanotube  

DOE Patents (OSTI)

Methods of fabricating uniform nanotubes are described in which nanotubes were synthesized as sheaths over nanowire templates, such as using a chemical vapor deposition process. For example, single-crystalline zinc oxide (ZnO) nanowires are utilized as templates over which gallium nitride (GaN) is epitaxially grown. The ZnO templates are then removed, such as by thermal reduction and evaporation. The completed single-crystalline GaN nanotubes preferably have inner diameters ranging from 30 nm to 200 nm, and wall thicknesses between 5 and 50 nm. Transmission electron microscopy studies show that the resultant nanotubes are single-crystalline with a wurtzite structure, and are oriented along the <001> direction. The present invention exemplifies single-crystalline nanotubes of materials with a non-layered crystal structure. Similar "epitaxial-casting" approaches could be used to produce arrays and single-crystalline nanotubes of other solid materials and semiconductors. Furthermore, the fabrication of multi-sheath nanotubes are described as well as nanotubes having multiple longitudinal segments.

Yang, Peidong (Berkeley, CA); He, Rongrui (Berkeley, CA); Goldberger, Joshua (Berkeley, CA); Fan, Rong (El Cerrito, CA); Wu, Yi-Ying (Albany, CA); Li, Deyu (Albany, CA); Majumdar, Arun (Orinda, CA)

2007-05-01T23:59:59.000Z

458

Wide-Bandgap Compound Semiconductors to Enable Novel Semiconductor Devices  

DOE Green Energy (OSTI)

This report represents the completion of a three-year Laboratory-Directed Research and Development (LDRD) program that focused on research and development of GaN-based wide bandgap semiconductor materials (referred to as III-N materials). Our theoretical investigations include the determination of fundamental materials parameters from first-principles calculations, the study of gain properties of III-N heterostructures using a microscopic laser theory and density-functional-theory, charge-state calculations to determine the core structure and energy levels of dislocations in III-N materials. Our experimental investigations include time-resolved photoluminescence and magneto-luminescence studies of GaN epilayers and multiquantum well samples as well as x-ray diffraction studies of AlGaN ternary alloys. In addition, we performed a number of experiments to determine how various materials processing steps affect both the optical and electrical properties of GaN-based materials. These studies include photoluminescence studies of GaN epilayers after post-growth rapid thermal annealing, ion implantation to produce n- and p-type material and electrical and optical studies of plasma-etched structures.

Crawford, M.H.; Chow, W.W.; Wright, A.F.; Lee, S.R.; Jones, E.D.; Han, J.; Shul, R.J.

1999-04-01T23:59:59.000Z

459

P-type gallium nitride  

DOE Patents (OSTI)

Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

Rubin, Michael (Berkeley, CA); Newman, Nathan (Montara, CA); Fu, Tracy (Berkeley, CA); Ross, Jennifer (Pleasanton, CA); Chan, James (Berkeley, CA)

1997-01-01T23:59:59.000Z

460

Direct Conversion of Radioisotope Energy to Electricity  

DOE Green Energy (OSTI)

A new chemical reactor has been tested for Field Enhanced Diffusion by Optical Activation doping and purification of SiC, GaN and AlN films. Different conditions have been used on SiC, GaN and AlN samples including temperature variation, electrical field variation, variations in electrical current and optical activation. A 5mW (630-680) nm laser was used for optical activation. It was observed that optical activation has a major effect on ion drift rates. It was also observed that the magnitude of the electrical current also enhanced ion drift rates by a postulated current drag mechanism. I-V characteristic curves were measured to verify changes in the electrical properties of the samples SIMS was used to analyze the concentrations of impurities in the film samples before and after treatment. It has been demonstrated that the field-enhanced diffusion by optical activation method can dope and purify the films. As a result, the electrical properties of the wafers have been significantly improved during treatment especially in cases where a laser is used.

Marks Prelas; Alexey Spitsyn; Alejandro Suarez; Eric Stienfelds; Dickerson Moreno; Bia-Ling Hsu; Tushar Ghosh; Robert Tompson; Sudarshan Loyalka; Dabir Viswanath

2003-09-09T23:59:59.000Z

Index
Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
461

An optimal light-extracting overlayer, inspired by the lantern of a Photuris firefly, to improve the external efficiency of existing light-emitting diodes  

E-Print Network (OSTI)

Actual light emission diodes (LED) have most often good internal efficiencies but poor external efficiencies due to total internal reflection at the air interface. In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is investigated. The purpose of this overlayer is to improve light extraction into air, after the photons have been generated in the diode's high refractive-index active material. The layer design is inspired by the microstructure found in the firefly Photuris sp., described by Bay et al. : a surface with an asymmetrical triangular profile (a "factory-roof" shape), developed on the scale of a few micrometers, thus somewhat larger than usually suggested in the related literature. The profile of the overlayer corrugated surface of the coating film was copied from the natural model. Yet, the actual dimensions and material composition have been optimized to take into account the high refractive index of the GaN diode stack. The optimization proc...

Bay, Annick; Sarrazin, Michael; Belarouci, Ali; Aimez, Vincent; Francis, Laurent A; Vigneron, Jean Pol

2012-01-01T23:59:59.000Z

462

Punktdefekte in Verbindungshalbleitern untersucht mit der gestörten Winkelkorrelation  

E-Print Network (OSTI)

This work characterizes the doped semiconductors AlN, GaN, their alloys AlGaN and ZnO. They crystallize in the so called wurtzite structure and are used in many devices already (as light emitting diodes or as transparent contacts). For these applications it is important to know how the characteristics of these crystals change with doping. To do this, the local environment of implanted impurities is studied. Important information is the lattice location of these atoms, how many of them can be introduced to the lattice (solubility). Thus it can be determined if these elements are suited as dopants. This work addresses the possible p-doping of AlN and GaN with Cd. Which is very important in the case of AlN, since no efficient method was found top produce p-type AlN, yet. In addition it was shown, that through doping with In a nitrogen vacancy forms a complex with the dopant, which might have a big influence on the properties of the semiconductor. The other question addressed are dilute magnetic semiconductors (D...

Keßler, Patrick

463

Wide-Bandgap Semiconductors  

SciTech Connect

With the increase in demand for more efficient, higher-power, and higher-temperature operation of power converters, design engineers face the challenge of increasing the efficiency and power density of converters [1, 2]. Development in power semiconductors is vital for achieving the design goals set by the industry. Silicon (Si) power devices have reached their theoretical limits in terms of higher-temperature and higher-power operation by virtue of the physical properties of the material. To overcome these limitations, research has focused on wide-bandgap materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond because of their superior material advantages such as large bandgap, high thermal conductivity, and high critical breakdown field strength. Diamond is the ultimate material for power devices because of its greater than tenfold improvement in electrical properties compared with silicon; however, it is more suited for higher-voltage (grid level) higher-power applications based on the intrinsic properties of the material [3]. GaN and SiC power devices have similar performance improvements over Si power devices. GaN performs only slightly better than SiC. Both SiC and GaN have processing issues that need to be resolved before they can seriously challenge Si power devices; however, SiC is at a more technically advanced stage than GaN. SiC is considered to be the best transition material for future power devices before high-power diamond device technology matures. Since SiC power devices have lower losses than Si devices, SiC-based power converters are more efficient. With the high-temperature operation capability of SiC, thermal management requirements are reduced; therefore, a smaller heat sink would be sufficient. In addition, since SiC power devices can be switched at higher frequencies, smaller passive components are required in power converters. Smaller heat sinks and passive components result in higher-power-density power converters. With the advent of the use of SiC devices it is imperative that models of these be made available in commercial simulators. This enables power electronic designers to simulate their designs for various test conditions prior to fabrication. To build an accurate transistor-level model of a power electronic system such as an inverter, the first step is to characterize the semiconductor devices that are present in the system. Suitable test beds need to be built for each device to precisely test the devices and obtain relevant data that can be used for modeling. This includes careful characterization of the parasitic elements so as to emulate the test setup as closely as possible in simulations. This report is arranged as follows: Chapter 2--The testing and characterization of several diodes and power switches is presented. Chapter 3--A 55-kW hybrid inverter (Si insulated gate bipolar transistor--SiC Schottky diodes) device models and test results are presented. A detailed description of the various test setups followed by the parameter extraction, modeling, and simulation study of the inverter performance is presented. Chapter 4--A 7.5-kW all-SiC inverter (SiC junction field effect transistors (JFET)--SiC Schottky diodes) was built and tested. The models built in Saber were validated using the test data and the models were used in system applications in the Saber simulator. The simulation results and a comparison of the data from the prototype tests are discussed in this chapter. Chapter 5--The duration test results of devices utilized in buck converters undergoing reliability testing are presented.

Chinthavali, M.S.

2005-11-22T23:59:59.000Z

464

Scaling air quality effects from alternative jet fuel in aircraft and ground support equipment  

E-Print Network (OSTI)

Many of the nation's largest airports, including Los Angeles International Airport, the Hartsfield-Jackson Atlanta International Airport, Chicago O'Hare International Airport and Washington Dulles International Airport are ...

Donohoo, Pearl (Pearl Elizabeth)

2010-01-01T23:59:59.000Z

465

High-Efficiency Non-Polar GaN-Based LEDs  

SciTech Connect

Inlustra Technologies with subcontractor U.C. Santa Barbara conducted a project with the principle goal of demonstrating high internal quantum efficiency blue (430 nm) and green (540nm) light emitting diodes (LEDs) on low-defect density non-polar GaN wafers. Inlustra pursued the fabrication of smooth thick a-plane and m-plane GaN films, as well as defect reduction techniques such as lateral epitaxial overgrowth (LEO) to uniformly lower dislocation density in these films. Limited free-standing wafers were produced as well. By the end of the reporting period, Inlustra had met its milestone of dislocation reduction to < 5 x 10{sup 6} cm{sup -2}. Stacking faults were still present in appreciable density ({approx} 1 x 10{sup 5} cm{sup -1}), but were not the primary focus of defect reduction since there have been no published studies establishing their detrimental effects on LED performance. Inlustra's LEO progress built a solid foundation upon which further commercial development of GaN substrates will occur. UCSB encountered multiple delays in its LED growth and fabrication efforts due to unavoidable facilities outages imposed by ongoing construction in an area adjacent to the metalorganic chemical vapor deposition (MOCVD) laboratory. This, combined with the large amount of ab initio optimization required for the MOCVD system used during the project, resulted in unsatisfactory LED progress. Although numerous blue-green photoluminescence results were obtained, only a few LED structures exhibited electroluminescence at appreciable levels. UCSB also conducting extensive modeling (led by Prof. Van de Walle) on the problem of non-radiative Auger recombination in GaN-based LED structures, which has been posited to contribute to LED efficiency 'droop' at elevated current density. Unlike previous modeling efforts, UCSB's approach was truly a first-principles ab initio methodology. Building on solid numerical foundations, the Auger recombination rates of In{sub x}Ga{sub 1-x}N alloys were calculated from first-principles density-functional and many-body-perturbation theory. The differing mechanisms of inter- and intra-band recombination were found to affect different parts of the emission spectrum. In the blue to green spectral region and at room temperature the Auger coefficient was calculated to be as large as 2 x 10{sup -30} cm{sup 6} s{sup -1}; in the infrared it is even larger. These results indicated that Auger recombination may be responsible for the loss of quantum efficiency that affects InGaN-based light emitters, whether on non-polar or polar crystal planes.

Paul Fini

2010-11-30T23:59:59.000Z

466

High-Efficiency Non-Polar GaN-Based LEDs  

Science Conference Proceedings (OSTI)

Inlustra Technologies with subcontractor U.C. Santa Barbara conducted a project with the principle goal of demonstrating high internal quantum efficiency blue (430 nm) and green (540nm) light emitting diodes (LEDs) on low-defect density non-polar GaN wafers. Inlustra pursued the fabrication of smooth thick a-plane and m-plane GaN films, as well as defect reduction techniques such as lateral epitaxial overgrowth (LEO) to uniformly lower dislocation density in these films. Limited free-standing wafers were produced as well. By the end of the reporting period, Inlustra had met its milestone of dislocation reduction to LED performance. Inlustra's LEO progress built a solid foundation upon which further commercial development of GaN substrates will occur. UCSB encountered multiple delays in its LED growth and fabrication efforts due to unavoidable facilities outages imposed by ongoing construction in an area adjacent to the metalorganic chemical vapor deposition (MOCVD) laboratory. This, combined with the large amount of ab initio optimization required for the MOCVD system used during the project, resulted in unsatisfactory LED progress. Although numerous blue-green photoluminescence results were obtained, only a few LED structures exhibited electroluminescence at appreciable levels. UCSB also conducting extensive modeling (led by Prof. Van de Walle) on the problem of non-radiative Auger recombination in GaN-based LED structures, which has been posited to contribute to LED efficiency 'droop' at elevated current density. Unlike previous modeling efforts, UCSB's approach was truly a first-principles ab initio methodology. Building on solid numerical foundations, the Auger recombination rates of In{sub x}Ga{sub 1-x}N alloys were calculated from first-principles density-functional and many-body-perturbation theory. The differing mechanisms of inter- and intra-band recombination were found to affect different parts of the emission spectrum. In the blue to green spectral region and at room temperature the Auger coefficient was calculated to be as large as 2 x 10{sup -30} cm{sup 6} s{sup -1}; in the infrared it is even larger. These results indicated that Auger recombination may be responsible for the loss of quantum efficiency that affects InGaN-based light emitters, whether on non-polar or polar crystal planes.

Paul Fini

2010-11-30T23:59:59.000Z

467

Multi-modal Transportation > Highway Transportation > Trucking > Railroad transportation > Public transit > Rural transportation > Rural transit > Freig pipeline transportation > Airport planning and development > Airport maintenance > Bicycle and pedestr  

E-Print Network (OSTI)

> Bridges > Bridge approaches > Bridge railings > Transportation corridors > Streambeds > Pipe Street > Manuals > Handbooks > Literature reviews > Specifications > Performance based specifications > Standards

468
469

fgr3372.tmp  

Office of Scientific and Technical Information (OSTI)

5553 5553 P-type doping of GaN Raechelle Kimberly Wong Center for Advanced Materials Materials Sciences Division Ernest Orlando Lawrence Berkeley National Laboratory 1 Cyclotron Road Berkeley, California 94720 and Department of Materials Science and Mineral Engineering University of California Berkeley, California 94720 M.S. Thesis April 2000 This work was supportedby the Director,Officeof Science,Officeof BasicEnergySciences,Divisionof MaterialsSciences,of the U.S. Departmentof EnergyunderContractNo. DE-AC03-76SFOO098. DISCLAIMER This repofi was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, make any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any

470

CX-000845: Categorical Exclusion Determination | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0845: Categorical Exclusion Determination 0845: Categorical Exclusion Determination CX-000845: Categorical Exclusion Determination 25A2445 - Ammonothermal Bulk Gallium Nitride (GaN) Crystal Growth for Energy Efficient Lighting CX(s) Applied: B3.6 Date: 01/15/2010 Location(s): New York Office(s): Advanced Research Projects Agency - Energy This project plans to address the vast energy loss and consumption associated with conventional lighting by developing a new route to large, high-quality, single crystals of gallium nitride. These crystals will serve as substrates for light emitting diodes offering high-efficiency lighting. DOCUMENT(S) AVAILABLE FOR DOWNLOAD CX-000845.pdf More Documents & Publications CX-009889: Categorical Exclusion Determination Power Electronics Research and Development Program Plan

471

ARM - Mobile Aerosol Observing System  

NLE Websites -- All DOE Office Websites (Extended Search)

FacilitiesMobile Aerosol Observing System FacilitiesMobile Aerosol Observing System AMF Information Science Architecture Baseline Instruments AMF1 AMF2 AMF3 Data Operations AMF Fact Sheet Images Contacts AMF Deployments Hyytiälä, Finland, 2014 Manacapuru, Brazil, 2014 Oliktok Point, Alaska, 2013 Los Angeles, California, to Honolulu, Hawaii, 2012 Cape Cod, Massachusetts, 2012 Gan Island, Maldives, 2011 Ganges Valley, India, 2011 Steamboat Springs, Colorado, 2010 Graciosa Island, Azores, 2009-2010 Shouxian, China, 2008 Black Forest, Germany, 2007 Niamey, Niger, 2006 Point Reyes, California, 2005 Mobile Aerosol Observing System Intensive aerosol observations conducted on the campus of Brookhaven National Laboratory on Long Island, New York, using the ARM Mobile Aerosol Observing System. Intensive aerosol observations conducted on the campus of Brookhaven

472

ARM - Evaluation Product - Interpolated Sonde  

NLE Websites -- All DOE Office Websites (Extended Search)

ProductsInterpolated Sonde ProductsInterpolated Sonde Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Evaluation Product : Interpolated Sonde Site(s) GAN SGP TWP General Description The interpolated-sonde value-added product is a modification of the mergesonde VAP that produces a daily file of thermodynamic variables from radiosonde soundings, the microwave radiometer, and surface meteorological instruments. This product does not incorporate ECMWF model output. Interpolated-sonde includes many of the same sophisticated scaling/interpolation/smoothing schemes that are the hallmark of the mergesonde VAP, but there are benefits to excluding ECMWF model output. These benefits include (1) a shorter time lag in producing a thermodynamic profile, and (2) the profiles are independent of the model so comparisons

473

ARM - AMF2 Architecture  

NLE Websites -- All DOE Office Websites (Extended Search)

Architecture Architecture AMF Information Science Architecture Baseline Instruments AMF1 AMF2 AMF3 Data Operations AMF Fact Sheet Images Contacts AMF Deployments Hyytiälä, Finland, 2014 Manacapuru, Brazil, 2014 Oliktok Point, Alaska, 2013 Los Angeles, California, to Honolulu, Hawaii, 2012 Cape Cod, Massachusetts, 2012 Gan Island, Maldives, 2011 Ganges Valley, India, 2011 Steamboat Springs, Colorado, 2010 Graciosa Island, Azores, 2009-2010 Shouxian, China, 2008 Black Forest, Germany, 2007 Niamey, Niger, 2006 Point Reyes, California, 2005 AMF2 Architecture The core AMF2 instrumentation is designed to operate out of modules; small independent climate controlled systems that house instrument computers, data loggers and other support equipment. This design feature sets the AMF2 apart in its flexibility and mobility at deployment sites.

474

ARM - Evaluation Product - CMWG Data - SCM-Forcing Data, Cloud  

NLE Websites -- All DOE Office Websites (Extended Search)

ProductsCMWG Data - SCM-Forcing Data, Cloud ProductsCMWG Data - SCM-Forcing Data, Cloud Microphysical Properties and Radiative Heating Profiles Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Evaluation Product : CMWG Data - SCM-Forcing Data, Cloud Microphysical Properties and Radiative Heating Profiles Site(s) GAN HFE NSA SGP TWP General Description SCM-forcing data are derived from the ARM Program observational data using the constrained variational analysis approach (Zhang and Lin 1997 and Zhang et al. 2001). The resulting products include both the large-scale forcing terms and the evaluation fields, which can be used for driving the Single-Column Models (SCMs) and Cloud Resolving Models (CRMs) and validating model simulations. Results from our studies are then used to

475

Solid-State Lighting Issue 17: Selected Business & Technology News  

NLE Websites -- All DOE Office Websites (Extended Search)

24/2003 24/2003 | Table of Contents | Abstracts | Credit and Disclaimer | ISSUE 17: BUSINESS AND TECHNOLOGY NEWS (Mid-March to Late May 2003) A selection of news appears in this section. A. Developer News B. New Products C. Novel or Interesting LED Applications/Uses D. Market Information E. Overviews F. Research Results G. Selected Events of Interest H. Government Funding News and Opportunities Where possible, links to full-text articles and press releases have been included in the abstracts. Click on the links in the table below to go directly to the abstract. Table of Contents: Business and Technology News A. Developer News · Aixtron has sold a MOCVD platform to Shanghai LanBao for manufacturing blue LEDs. · Aixtron has sold a GaN MOCVD reactor to RPI for ultra high brightness LED research.

476

Document  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

684 Federal Register 684 Federal Register / Vol. 75, No. 169 / Wednesday, September 1, 2010 / Notices income students for school year 2010- 2011. Also, in determining whether to approve an application for a new award (including the amount of the award) from an applicant with a current grant under this program, the Department will consider the amount of any carryover funds under the existing grant. VI. Award Administration Information 1. Award Notices: If your application is successful, we notify your U.S. Representative and U.S. Senators and send you a Grant Award Notification (GAN). We may notify you informally, also. If your application is not evaluated or not selected for funding, we notify you. 2. Administrative and National Policy Requirements: We identify administrative and national policy

477

Categorical Exclusion Determinations: New York | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

January 15, 2010 January 15, 2010 CX-000845: Categorical Exclusion Determination 25A2445 - Ammonothermal Bulk Gallium Nitride (GaN) Crystal Growth for Energy Efficient Lighting CX(s) Applied: B3.6 Date: 01/15/2010 Location(s): New York Office(s): Advanced Research Projects Agency - Energy December 29, 2009 CX-000273: Categorical Exclusion Determination Pressure Sensor and Telemetry Methods for Measurement while Drilling in Geothermal Wells CX(s) Applied: A9, B3.6 Date: 12/29/2009 Location(s): New York Office(s): Energy Efficiency and Renewable Energy, Golden Field Office December 21, 2009 CX-001281: Categorical Exclusion Determination Hire Experts, Lighting Retrofits, and Install Solar Lights CX(s) Applied: A9, B5.1 Date: 12/21/2009 Location(s): Suffolk, New York Office(s): Energy Efficiency and Renewable Energy

478

A InGaN/GaN quantum dot green ({lambda}=524 nm) laser  

SciTech Connect

The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab [Department of Electrical Engineering and Computer Science, Center for Nanoscale Photonics and Spintronics, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2011-05-30T23:59:59.000Z

479

Barrier height of Pt-In{sub x}Ga{sub 1-x}N (0{<=}x{<=}0.5) nanowire Schottky diodes  

SciTech Connect

The barrier height of Schottky diodes made on In{sub x}Ga{sub 1-x}N nanowires have been determined from capacitance-voltage measurements. The nanowires were grown undoped on n-type (001) silicon substrates by plasma-assisted molecular beam epitaxy. The length, diameter and density of the nanowires are {approx}1 {mu}m, 20 nm, and 1x10{sup 11} cm{sup -2}. The Schottky contact was made on the top surface of the nanowires with Pt after planarizing with parylene. The measured barrier height {Phi}{sub B} varies from 1.4 eV (GaN) to 0.44 eV (In{sub 0.5}Ga{sub 0.5}N) and agrees well with the ideal barrier heights in the Schottky limit.

Guo Wei; Banerjee, Animesh; Zhang Meng; Bhattacharya, Pallab [Department of Electrical Engineering and Computer Science, Center for Nanoscale Photonics and Spintronics, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2011-05-02T23:59:59.000Z

480

Document  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

4 4 Federal Register / Vol. 69, No. 17 / Tuesday, January 27, 2004 / Notices V. Application Review Information Selection Criteria: The selection criteria for this program are in 34 CFR 637.32. VI. Award Administration Information 1. Award Notices: If your application is successful, we notify your U.S. Representative and U.S. Senators and send you a Grant Award Notice (GAN). We may also notify you informally. If your application is not evaluated or not selected for funding, we notify you. 2. Administrative and National Policy Requirements: We identify administrative and national policy requirements in the application package and reference these and other requirements in the Applicable Regulations section of this notice. We reference the regulations outlining

Index
Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


Index
481

Solid-State Lighting Issue 10: Scientific Literature (July - Mid-October,  

NLE Websites -- All DOE Office Websites (Extended Search)

Synopses | Credits and Disclaimer | Synopses | Credits and Disclaimer | ISSUE 10: SCIENTIFIC LITERATURE (July - Mid-October, 2001) The material in this section is selected from scientific and technical papers which became available during the reporting time period. A brief synopsis of each paper is provided along to links to the full text of article abstracts available on the web. TABLE OF CONTENTS (headlines and links to synopses) · Academy Sinica (China):Review of GaN-based materials, growth techn. and device tech. · Agilent :GaN-based LEDs with tunnel junctions. · Boston U : Current crowding in GaN/InGaN LEDs. · Cambridge U : Chemical mapping of InGaN. · Chonbuk U (Korea): Influences of AlGaN layer on UV LED structures. · CNRS (France): Wurtzite GaN epitaxial layers.

482

Scientific Literature and Other Publications by Sandia Scientists  

NLE Websites -- All DOE Office Websites (Extended Search)

Literature and Other Publications by Sandia Literature and Other Publications by Sandia Scientists A bibliography is presented here of articles and other publications (submitted articles, book chapters, book reviews and other miscellaneous reports) published by Sandia scientists in the area of solid- state lighting from 1992 through July 2003. The citations are organized by year, beginning with the most recent year. Within years, publications are ordered alphabetically by title. To skip directly to a particular year, click on the link, below. 2003 2002 2001 2000 1999 1998 1997 1996 1995 1994 1993 1992 2003 * "Comment on 'Infrared spectroscopy of Mg-H local vibrational mode in GaN with polarized light" - art. no. 037201' ", by C. H. Seager, in Physical Review B 6703(3):7201 (2003).

483

STATEMENT OF CONSIDERATIONS REQUEST BY CREE, INC. FOR AN ADVANCED WAIVER OF DOMESTIC AND  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

FC26-08NT01577, W(A)-2009·063, CH-1534 FC26-08NT01577, W(A)-2009·063, CH-1534 The petitioner, Cree, Inc. (Cree), was awarded this cooperative agreement for the performance of work entitled, "Efficient White SSL Component for General Illumination." The purpose of the cooperative agreement is to develop the technology, fabrication processes, and prototypes to demonstrate warm white solid-state lamps based on GaN semiconductor Light Emitting Diodes (LEDs) and phosphor down-conversion LEDs that are viable replacements for energy inefficient incandescent lighting solutions. The objective of this' program is to improve both the LED power efficiency as well as demonstrating novel phosphor converters in LED products that achieve higher luminous efficiencies both at room temperature and elevated.

484

Management Overview  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Overview - Fast Reactor and Overview - Fast Reactor and LWR Fuel Cladding Stuart A. Maloy Core Materials Technical Lead for Fuels Los Alamos National Laboratory DOE NE Materials-Cross-Coordination Webinar July 30, 2013 LA-UR-13-25972 2 Contributors  LANL: Tarik Saleh, Toby Romero, Bill Crooks, Ed Garcia, Rob Aikin jr., Osman Anderoglu, Ming Tang, Sara Perez-Berquist, Mark Bourke, Don Brown, Bjorn Clausen  PNNL: Mychailo Toloczko, Glenn Grant, David Senor, Jim Buelt  INL: Jim Cole, Randy Fielding, Jian Gan, Mitch Meyer, Bulent H. Sencer, Emmanuel Perez, Michael Teague  ORNL: T.S. Byun, David Hoelzer, M. Brady, K. Terrani, M. Fechter, L. Snead, B. Pint  Techsource: F. Garner  UCSB: G.R. Odette  UCB: P. Hosemann  SDSMT: M. West, B. Jasthi

485

STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM SYLVANIA DEVELOPMENT, INC. FOR AN ADVANCE WAIVER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1 2004 10:32 FR IPL DOE CH 630 252 2779 TO AGCP-HQ P.02/04 1 2004 10:32 FR IPL DOE CH 630 252 2779 TO AGCP-HQ P.02/04 * * STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM SYLVANIA DEVELOPMENT, INC. FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS UNDER DOE COOPERATIVE AGREEMENT NO. DE-FC26-04NT42274; SUBCONTRACT NO. QZ001; W(A)-04-073; CH-1251 The Petitioner, Osram Sylvania Development, Inc. (Osram), was awarded subcontract for the performance of work entitled, "Development of White-Light Emitting Active Layers in Nitride Based Heterostructures for Phosphorless Solid State Lighting." In this program, Osram will explore the feasibility of new LED architecture for white light emission using thin films of nitride- based luminescent semiconductor alloys of GaN, Al N, and InN doped with suitably chosen

486

Microsoft PowerPoint - 2-05 PEGG-2 - Melter Tests with High Al HLW - Nov 2010 emb.ppt  

NLE Websites -- All DOE Office Websites (Extended Search)

Melter Melter Testing with High Aluminum HLW Streams Ian L. Pegg, Hao Gan, Wing K. Kot, Keith S. Matlack, and Innocent Joseph * Vitreous State Laboratory The Catholic University of America Washington, DC * EnergySolutions, Inc. DOE EM Waste Processing Technical Exchange 2010 Print Close Melter Testing with High Aluminum HLW Streams 2 LAW Vitrification (90+% of waste mass) HLW Vitrification (90+% of waste activity) Pretreatment (solid/liquid separation, Cs-IX, Al, Cr, leaching) SLUDGE SUPERNATE Maximize Mass Maximize Activity Hanford WTP - Key Process Flows LAW glass disposed on site HLW glass disposed of in National Geologic Repository - TBD * Supernate: Solution of Na, Al, P, K, S, Cl, Cs, Tc, nitrates, hydroxides... * Sludge: Solids high in Fe, Al, Zr, Cr, Bi, Sr, TRU, oxides, hydroxides....

487

Page not found | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

21 - 13730 of 26,764 results. 21 - 13730 of 26,764 results. Download CX-010974: Categorical Exclusion Determination Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory http://energy.gov/nepa/downloads/cx-010974-categorical-exclusion-determination Download CX-010975: Categorical Exclusion Determination Advanced Climate Control and Cabin Preconditioning using Zonal Distribution, Advanced Heat Pump... CX(s) Applied: B3.6, B5.1 Date: 09/16/2013 Location(s): Michigan Offices(s): National Energy Technology Laboratory http://energy.gov/nepa/downloads/cx-010975-categorical-exclusion-determination Download CX-010976: Categorical Exclusion Determination

488

U.S. Department of Energy Categorical Exclusion Determination Form  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0288-1591) Transphorm, Inc. - 0288-1591) Transphorm, Inc. - High Performance GaN HEMT Modules for Agile Power Electronics Location: California Transphorm, Inc.; University of California, Santa Barbara (UCSB) Proposed Action or Project Description: American Recovery and Reinvestment Act: Funding will support laboratory research, design, testing, and fabrication of the first hybrid multichip power modules for inverterslconverters operating at 1MHz, capable of being retrofitted to older generation motors, embedded in new motors, and in grid-tied photovoltaic inverters. The proposed work is consistent with the goal of ADEPT: fundamental advances in soft magnetics, high voltage switches, and reliable, high-density charge storage. Proposed work consists entirely of RD&D work to be completed in laboratory, manufacturing and testing facilities located at the headquarters of

489

Cree Inc | Open Energy Information  

Open Energy Info (EERE)

Cree Inc Cree Inc Jump to: navigation, search Name Cree Inc Place Durham, North Carolina Zip 27703 Product Cree develops and manufactures semiconductor materials and devices based on silicon carbide (SiC), gallium nitride (GaN), silicon (Si) and related compounds. Coordinates 45.396265°, -122.755099° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":45.396265,"lon":-122.755099,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

490

U.S. DEPARTIVmNT OF ENFRGY EERE PROJECT MANAGEMENT CENTER NEP.A DETFmllNATION  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

DEPARTIVmNT OF ENFRGY DEPARTIVmNT OF ENFRGY EERE PROJECT MANAGEMENT CENTER NEP.A DETFmllNATION RECIPIENT:MEMC Electronic Materials, Inc. Page 1 of2 STATE: MO PROJECT TITLE: High Quality, Low Cost Bulk Gallium Nitride (GaN) Substrates Grown by the Electrochemical Solution Growth Method Funding Opportunity Announcement Number DE-FOA-0000560 Procurement Instrument Number NEPA Control Number CID Number DE-EE0005755 GF0-0005755-001 G05755 Based on my r eview of the information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 451.1A), I have made the following determination: CX, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering, analysis, and dissemination Information gathering (including, but not limited to, literature surveys, inventories, site visits, and

491

ARM - AMF2 Organization and Contact Information  

NLE Websites -- All DOE Office Websites (Extended Search)

Organization and Contact Information Organization and Contact Information AMF Information Science Architecture Baseline Instruments AMF1 AMF2 AMF3 Data Operations AMF Fact Sheet Images Contacts AMF Deployments Hyytiälä, Finland, 2014 Manacapuru, Brazil, 2014 Oliktok Point, Alaska, 2013 Los Angeles, California, to Honolulu, Hawaii, 2012 Cape Cod, Massachusetts, 2012 Gan Island, Maldives, 2011 Ganges Valley, India, 2011 Steamboat Springs, Colorado, 2010 Graciosa Island, Azores, 2009-2010 Shouxian, China, 2008 Black Forest, Germany, 2007 Niamey, Niger, 2006 Point Reyes, California, 2005 AMF2 Organization and Contact Information The Argonne AMF2 Operations Office manages the operation of the second ARM mobile facility. Basic contact information, phone numbers, email, and shipping information to personnel in this office is available on this page.

492

ARM - Evaluation Product - Active Remote Sensing of Clouds from Ka-band ARM  

NLE Websites -- All DOE Office Websites (Extended Search)

ProductsActive Remote Sensing of Clouds from Ka-band ProductsActive Remote Sensing of Clouds from Ka-band ARM Zenith Radars Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Evaluation Product : Active Remote Sensing of Clouds from Ka-band ARM Zenith Radars Site(s) GAN SGP General Description The Ka-band ARM Zenith Radars (KAZRs) have replaced the long-serving Millimeter Cloud Radars, or MMCRs. Accordingly, the primary MMCR Value Added Product (VAP), the Active Remote Sensing of CLouds (ARSCL) product, is being replaced by a KAZR-based version, the KAZR-ARSCL VAP. KAZR-ARSCL provides cloud boundaries and best-estimate time-height fields of radar moments. KAZR observations are corrected for water vapor attenuation and velocity aliasing and significant detection masks are produced. KAZR-ARSCL

493

STATEMENT OF CONSIDERATIONS SREQUEST BY CREE, INC FOR AN ADVANCE WAIVER OF DOMESTIC AND  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

SREQUEST BY CREE, INC FOR AN ADVANCE WAIVER OF DOMESTIC AND SREQUEST BY CREE, INC FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS UNDER DOE COOPERATIVE AGREEMENT NO. DE-FC26-03NT41943; W(A)-03-051, CH-1170 The Petitioner, Cree, Inc., (Cree) was awarded this cooperative agreement for the performance of work entitled, "High Efficiency LED Lamp for Solid State Lighting." The purpose of the cooperative agreement is to develop the technology, fabrication processes, and prototypes to demonstrate solid-state lamps based on GaN semiconductor LEDs that are viable replacements for energy inefficient incandescent lighting solutions. The ultimate goal of the program is to deliver to the Department of Energy solid-state lamp prototypes that produce 1000 Im of white flux at an efficacy of 1001m/w, with the potential of improvement to 150 Im/W beyond the time frame of the

494

Page not found | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

41 - 8950 of 29,416 results. 41 - 8950 of 29,416 results. Download CX-000845: Categorical Exclusion Determination 25A2445 - Ammonothermal Bulk Gallium Nitride (GaN) Crystal Growth for Energy Efficient Lighting CX(s) Applied: B3.6 Date: 01/15/2010 Location(s): New York Office(s): Advanced Research Projects Agency - Energy http://energy.gov/nepa/downloads/cx-000845-categorical-exclusion-determination Download CX-000839: Categorical Exclusion Determination 25A1089 - Electroville: High-Amperage Energy Storage Device-Energy Storage for the Neighborhood CX(s) Applied: B3.6 Date: 01/15/2010 Location(s): Massachusetts Office(s): Advanced Research Projects Agency - Energy http://energy.gov/nepa/downloads/cx-000839-categorical-exclusion-determination Download CX-000860: Categorical Exclusion Determination

495

Solid-State Lighting Issue 15: Selected Business & Technology News  

NLE Websites -- All DOE Office Websites (Extended Search)

9/2002 9/2002 | Table of Contents | Abstracts | Credit and Disclaimer | ISSUE 15: BUSINESS AND TECHNOLOGY NEWS (September - November 2002) A selection of news appears in this section. A. Developer News B. New Products C. Research Results D. Government Activities and Funding News E. Overview Articles Where possible, links to full-text articles and press releases have been included in the abstracts. Click on the links in the table below to go directly to the abstract. Table of Contents: Business and Technology News A. Developer News · Amtech Lighting Services will provide LED traffic signals for City of Dallas, TX. · ATMI received a $9.46 million ONR grant to develop AlGaN/GaN HEMTs on 4-inch GaN and SiC substrates, part of DARPA’s Wide Bandgap Semiconductor Technology Initiative.

496

ARM - Surface Aerosol Observing System  

NLE Websites -- All DOE Office Websites (Extended Search)

FacilitiesSurface Aerosol Observing System FacilitiesSurface Aerosol Observing System AMF Information Science Architecture Baseline Instruments AMF1 AMF2 AMF3 Data Operations AMF Fact Sheet Images Contacts AMF Deployments Hyytiälä, Finland, 2014 Manacapuru, Brazil, 2014 Oliktok Point, Alaska, 2013 Los Angeles, California, to Honolulu, Hawaii, 2012 Cape Cod, Massachusetts, 2012 Gan Island, Maldives, 2011 Ganges Valley, India, 2011 Steamboat Springs, Colorado, 2010 Graciosa Island, Azores, 2009-2010 Shouxian, China, 2008 Black Forest, Germany, 2007 Niamey, Niger, 2006 Point Reyes, California, 2005 Surface Aerosol Observing System The ARM Mobile Facility (AMF) is equipped to quantify the interaction between clouds and aerosol particles. A counter-flow virtual impactor (CVI) is used to selectively sample cloud drops. The CVI takes advantage of the

497

Categorical Exclusion (CX) Determinations By Date | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5, 2010 5, 2010 CX-000839: Categorical Exclusion Determination 25A1089 - Electroville: High-Amperage Energy Storage Device-Energy Storage for the Neighborhood CX(s) Applied: B3.6 Date: 01/15/2010 Location(s): Massachusetts Office(s): Advanced Research Projects Agency - Energy January 15, 2010 CX-000845: Categorical Exclusion Determination 25A2445 - Ammonothermal Bulk Gallium Nitride (GaN) Crystal Growth for Energy Efficient Lighting CX(s) Applied: B3.6 Date: 01/15/2010 Location(s): New York Office(s): Advanced Research Projects Agency - Energy January 15, 2010 CX-000852: Categorical Exclusion Determination 25A4800 - High Energy Permanent Magnets for Hybrid Vehicles and Alternative Energy CX(s) Applied: B3.6 Date: 01/15/2010 Location(s): Delaware Office(s): Advanced Research Projects Agency - Energy

498

Two-dimensional electron gas in AlGaN/GaN heterostructures  

Science Conference Proceedings (OSTI)

The formation of a two-dimensional electron gas (2DEG) system by an AlGaN/GaN heterostructure has been further confirmed by measuring its electrical properties. The effect of persistent photoconductivity (PPC) has been observed and its unique features have been utilized to study the properties of 2DEG formed by the AlGaN/GaN heterointerface. Sharp electronic transitions from the first to the second subbands in the 2DEG channel have been observed by monitoring the 2DEG carrier mobility as a function of carrier concentration through the use of PPC. These results are expected to have significant implications on field-effect transistor and high electron mobility transistor applications based on the GaN system. {copyright} {ital 1997 American Vacuum Society.}

Li, J.Z.; Lin, J.Y.; Jiang, H.X. [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)] [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States); Khan, M.A.; Chen, Q. [APA Optics, Inc., Blaine, Minnesota 55449 (United States)] [APA Optics, Inc., Blaine, Minnesota 55449 (United States)

1997-07-01T23:59:59.000Z

499

High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH{sub 3}-based molecular beam epitaxy  

SciTech Connect

High external quantum efficiency (EQE) p-i-n heterojunction solar cells grown by NH{sub 3}-based molecular beam epitaxy are presented. EQE values including optical losses are greater than 50% with fill-factors over 72% when illuminated with a 1 sun AM0 spectrum. Optical absorption measurements in conjunction with EQE measurements indicate an internal quantum efficiency greater than 90% for the InGaN absorbing layer. By adjusting the thickness of the top p-type GaN window contact layer, it is shown that the short-wavelength (<365 nm) quantum efficiency is limited by the minority carrier diffusion length in highly Mg-doped p-GaN.

Lang, J. R.; Hurni, C. A.; Cruz, S. C.; Matioli, E.; Speck, J. S. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Neufeld, C. J.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2011-03-28T23:59:59.000Z

500

Structural controlled magnetic anisotropy in Heusler L1{sub 0}-MnGa epitaxial thin films  

Science Conference Proceedings (OSTI)

Ferromagnetic L1{sub 0}-MnGa thin films have been epitaxially grown on GaN, sapphire, and MgO substrates using molecular beam epitaxy. Using diffraction techniques, the epitaxial relationships are determined. It is found that the crystalline orientation of the films differ due to the influence of the substrate. By comparing the magnetic anisotropy to the structural properties, a clear correlation could be established indicating that the in-plane and out-of-plane anisotropy is directly determined by the crystal orientation of the film and could be controlled via selection of the substrates. This result could be helpful in tailoring magnetic anisotropy in thin films for spintronic applications.

Wang Kangkang; Lu Erdong; Smith, Arthur R. [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Knepper, Jacob W.; Yang Fengyuan [Department of Physics, Ohio State University, 191 Woodruff Ave., Columbus, Ohio 43210 (United States)

2011-04-18T23:59:59.000Z

Index