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1

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template  

SciTech Connect (OSTI)

We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110 nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

Wang, Y.D.; Zang, K.Y.; Chua, S.J.; Tripathy, S.; Chen, P.; Fonstad, C.G. [Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2005-12-19T23:59:59.000Z

2

Development of a Bulk GaN Growth Technique for Low Defect Density...  

Broader source: Energy.gov (indexed) [DOE]

current due to bulk defects GaN is Grown Heteroepitaxially on Sapphire (and Silicon Carbide) Substrates * As grown GaN nucleation layers contain disordered GaN with many...

3

ARM - AMIE Gan Island - Data Plots  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLasDelivered‰PNGExperience4AJ01) (See95TI07)Operations2AP-XPSAPS50 -IssuegovFieldOverviewGan

4

ARM MJO Investigation Experiment on Gan Island (AMIE-Gan) Science Plan  

SciTech Connect (OSTI)

The overarching campaign, which includes the ARM Mobile Facility 2 (AMF2) deployment in conjunction with the Dynamics of the Madden-Julian Oscillation (DYNAMO) and the Cooperative Indian Ocean experiment on intraseasonal variability in the Year 2011 (CINDY2011) campaigns, is designed to test several current hypotheses regarding the mechanisms responsible for Madden-Julian Oscillation (MJO) initiation and propagation in the Indian Ocean area. The synergy between the proposed AMF2 deployment with DYNAMO/CINDY2011, and the corresponding funded experiment on Manus, combine for an overarching ARM MJO Investigation Experiment (AMIE) with two components: AMF2 on Gan Island in the Indian Ocean (AMIE-Gan), where the MJO initiates and starts its eastward propagation; and the ARM Manus site (AMIE-Manus), which is in the general area where the MJO usually starts to weaken in climate models. AMIE-Gan will provide measurements of particular interest to Atmospheric System Research (ASR) researchers relevant to improving the representation of MJO initiation in climate models. The framework of DYNAMO/CINDY2011 includes two proposed island-based sites and two ship-based locations forming a square pattern with sonde profiles and scanning precipitation and cloud radars at both island and ship sites. These data will be used to produce a Variational Analysis data set coinciding with the one produced for AMIE-Manus. The synergy between AMIE-Manus and AMIE-Gan will allow studies of the initiation, propagation, and evolution of the convective cloud population within the framework of the MJO. As with AMIE-Manus, AMIE-Gan/DYNAMO also includes a significant modeling component geared toward improving the representation of MJO initiation and propagation in climate and forecast models. This campaign involves the deployment of the second, marine-capable, AMF; all of the included measurement systems; and especially the scanning and vertically pointing radars. The campaign will include sonde launches at a rate of eight per day for the duration of the deployment. The increased sonde launches for the entire period matches that of the AMIE-Manus campaign and makes possible a far more robust Variational Analysis forcing data set product for the entire campaign, and thus better capabilities for modeling studies and synergistic research using the data from both AMIE sites.

Long, CL; Del Genio, A; Deng, M; Fu, X; Gustafson, W; Houze, R; Jakob, C; Jensen, M; Johnson, R; Liu, X; Luke, E; May, P; McFarlane, S; Minnis, P; Schumacher, C; Vogelmann, A; Wang, Y; Webster, P; Xie, S; Zhang, C

2011-04-11T23:59:59.000Z

5

E-Print Network 3.0 - aln gan inn Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: size. Introduction GaN and its alloys with InN and AlN have been used for optoelectronic devices... region. The formation of self-assembled GaN nanostructures on aluminum...

6

K.K. Gan EPS 2001 1 New Results on Charm  

E-Print Network [OSTI]

K.K. Gan EPS 2001 1 New Results on Charm Semileptonic Decays and Lifetime K.K. Gan The Ohio State University July 14, 2001 Representing CLEO Collaboration #12;K.K. Gan EPS 2001 2 l measurement of l first+ B(D+ K* 0 l+ l ) (D*+ ) c + #12;K.K. Gan EPS 2001 3 l P measurement of form factors helps to guide

Gan, K. K.

7

Joint ATLAS/CMS SLHC Opto WG 1 K.K. Gan Lesson Learned from  

E-Print Network [OSTI]

Joint ATLAS/CMS SLHC Opto WG 1 K.K. Gan Lesson Learned from ATLAS Pixel Optical Link #12;Joint ATLAS/CMS SLHC Opto WG 2 Outline Introduction VCSEL/PIN monitoring Analysis of opto-board/VCSEL/PIN failures Summary K.K. Gan #12;K.K. Gan Joint ATLAS/CMS SLHC Opto WG 3 Introduction Architecture

Gan, K. K.

8

K.K. Gan ATLAS Tracker Upgrade Workshop 1 Progress Report on Joint ATLAS/CMS  

E-Print Network [OSTI]

K.K. Gan ATLAS Tracker Upgrade Workshop 1 Progress Report on Joint ATLAS/CMS SLHC Opto ATLAS Tracker Upgrade Workshop 2 Outline Introduction Subgroups activities Summary #12;K.K. Gan ATLAS System #12;K.K. Gan ATLAS Tracker Upgrade Workshop 4 Group A: Lesson Learned and to be Learned from LHC

Gan, K. K.

9

K.K. Gan RD07 1 Radiation-Hard Optical Link for SLHC  

E-Print Network [OSTI]

spliced SIMM-GRIN fiber Radiation hardness of PIN/VCSEL arrays Results on MT-style optical packages irradiation? What is optical power after irradiation? What current is needed for annealing? #12;K.K. Gan RDK.K. Gan RD07 1 Radiation-Hard Optical Link for SLHC June 28, 2007 W. Fernando, K.K. Gan, A. Law, H

Gan, K. K.

10

Anti-phase domains in cubic GaN  

SciTech Connect (OSTI)

The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {l_brace}111{r_brace} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, {mu}-Raman and cathodoluminescence spectroscopy.

Maria Kemper, Ricarda; Schupp, Thorsten; Haeberlen, Maik; Lindner, Joerg; Josef As, Donat [University of Paderborn, Department of Physics, Warburger Str. 100, D-33098 Paderborn (Germany); Niendorf, Thomas; Maier, Hans-Juergen [University of Paderborn, Lehrstuhl fuer Werkstoffkunde, Pohlweg 47-49, D-33098 Paderborn (Germany); Dempewolf, Anja; Bertram, Frank; Christen, Juergen [University of Magdeburg, Institut fuer Festkoerperphysik, P.O. Box 4120, D-39016 Magdeburg (Germany); Kirste, Ronny; Hoffmann, Axel [Technische Universitaet Berlin, Institute of Solid State Physics, Hardenbergstr. 36, D-10623 Berlin (Germany)

2011-12-15T23:59:59.000Z

11

Maskless lateral epitaxial overgrowth of GaN on sapphire  

SciTech Connect (OSTI)

The authors demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed maskless LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 {micro}m) GaN layer on sapphire is selectively dry etched, leaving {approximately} 5 {micro}m-wide stripe mesas oriented in the <10{bar 1}0>{sub GaN} direction, with a 20 {micro}m period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a T, or overhang, morphology. As for LEO over an SiO{sub 2} mask, significant defect reduction (from {approximately} 10{sup 9} cm{sup {minus}2} to {approximately} 10{sup 6} cm{sup {minus}2}) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle ({approximately} 0.4--0.5{degree}) is relatively independent of growth temperature and wing aspect ratio.

Fini, P.; Marchand, H.; Ibbetson, J.P.; Moran, B.; Zhao, L.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.

1999-07-01T23:59:59.000Z

12

Pulsed laser annealing of Be-implanted GaN  

SciTech Connect (OSTI)

Postimplantation thermal processing of Be in molecular-beam-epitaxy-grown GaN by rapid thermal annealing (RTA) and pulsed laser annealing (PLA) was investigated. It has been found that the activation of Be dopants and the repair of implantation-induced defects in GaN films cannot be achieved efficiently by conventional RTA alone. On the other hand, good dopant activation and surface morphology and quality were obtained when the Be-implanted GaN film was annealed by PLA with a 248 nm KrF excimer laser. However, observations of off-resonant micro-Raman and high-resolution x-ray-diffraction spectra indicated that crystal defects and strain resulting from Be implantation were still existent after PLA, which probably degraded the carrier mobility and limited the activation efficiency to some extent. This can be attributed to the shallow penetration depth of the 248 nm laser in GaN, which only repaired the crystal defects in a thin near-surface layer, while the deeper defects were not annealed out well. This situation was significantly improved when the Be-implanted GaN was subjected to a combined process of PLA followed by RTA, which produced good activation of the dopants, good surface morphology, and repaired bulk and surface defects well.

Wang, H.T.; Tan, L.S.; Chor, E.F. [Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

2005-11-01T23:59:59.000Z

13

Properties of H, O and C in GaN  

SciTech Connect (OSTI)

The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

Pearton, S.J.; Abernathy, C.R.; Lee, J.W. [Univ. of Florida, Gainesville, FL (United States)] [and others

1996-04-01T23:59:59.000Z

14

Structural defects in GaN revealed by Transmission Electron Microscopy  

SciTech Connect (OSTI)

This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

Liliental-Weber, Zuzanna

2014-04-18T23:59:59.000Z

15

Hexagonal Growth Spirals on GaN Grown by Molecular Beam Epitaxy: Kinetics vs Thermodynamics  

E-Print Network [OSTI]

prepared, Ga-polar GaN(0001) templates. The surface morphology was studied using reflection high-energy-edge energy of 0.26 eV/Ã?. They suggest that local conditions at step edges dominate the growth. 1 conducted ex situ using AFM. Desorption mass spectrometry (DMS) was used to measure the GaN growth rate. Our

Cohen, Philip I.

16

K.K. Gan Opto-Link PRR 1 Status of Opto-Board Development  

E-Print Network [OSTI]

irradiation) LVDS fall time (after irradiation) Optical signal 4 rise and fall times after irradiation Results l Irradiation Results l Conclusions #12;K.K. Gan Opto-Link PRR 3 Opto-link #12;K.K. Gan Opto-Link PRR 4 l converts: optical signal ÷ electrical signal l provide 7 optical links: P disks and 50

Gan, K. K.

17

K.K. Gan HEP2007 1 Radiation-Hard Optical Link for SLHC  

E-Print Network [OSTI]

of fusion spliced SIMM-GRIN fiber Radiation hardness of PIN/VCSEL arrays Results on MT-style optical What is rise/fall time after irradiation? What is optical power after irradiation? What currentK.K. Gan HEP2007 1 Radiation-Hard Optical Link for SLHC July 20, 2007 W. Fernando, K.K. Gan, A. Law

Gan, K. K.

18

K.K. Gan Pixel Engineering Layout 1 Optical Link Layout Options  

E-Print Network [OSTI]

optical-link locations Predictions of degradation in fibers Predictions of degradation in VCSEL for r > 110 cm Loss calculated for Corning Infinicor GRIN fiber Fibers irradiated with gammas fromK.K. Gan Pixel Engineering Layout 1 Optical Link Layout Options K.K. Gan The Ohio State

Gan, K. K.

19

K.K. Gan ATLAS Tracker Upgrade Workshop 1 Summary of Optical Link R&D  

E-Print Network [OSTI]

-Hardness of Optical Fiber Corning Infinicor GRIN fiber irradiated with 's from Co60 Attenuation parameterized into optical signal for transmission in fibers PINs convert optical signal into electrical signal PlanK.K. Gan ATLAS Tracker Upgrade Workshop 1 Summary of Optical Link R&D K.K. Gan The Ohio State

Gan, K. K.

20

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy  

E-Print Network [OSTI]

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy A. J. Ptak, L. J-assisted molecular-beam epitaxy to study the dependence of oxygen incorporation on polarity and oxygen partial pressure. Oxygen incorporates at a rate ten times faster on nitrogen-polar GaN than on the Ga polarity

Myers, Tom

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

K.K. Gan Siena02 1 The Ohio State University  

E-Print Network [OSTI]

.K. Gan Siena02 6 l Decode Bi-Phase Mark encoded (BPM) clock and command signals from PIN diode l Input Error Rate (BER): BPM #12;K.K. Gan Siena02 7 l Training period: ~25 ms of 20 MHz clock (BPM with no data) DORIC Logic ] Ready

Gan, K. K.

22

Thermal annealing characteristics of Si and Mg-implanted GaN thin films  

SciTech Connect (OSTI)

In this letter, we report the results of ion implantation of GaN using {sup 28}Si and {sup 24}Mg species. Structural and electrical characterizations of the GaN thin films after thermal annealing show that native defects in the GaN films dominate over implant doping effects. The formation energies of the annealing induced defects are estimated to range from 1.4 to 3.6 eV. A 40 keV 10{sup 14} cm{sup {minus}2} Mg implant results in the decrease of the free-carrier concentration by three orders of magnitude compared to unimplanted GaN up to an annealing temperature of 690{degree}C. Furthermore, we have observed the correlation between these annealing-induced defects to both improved optical and electrical properties. {copyright} {ital 1996 American Institute of Physics.}

Chan, J.S.; Cheung, N.W. [Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)] [Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States); Schloss, L.; Jones, E.; Wong, W.S.; Newman, N.; Liu, X.; Weber, E.R. [Department of Material Science and Mineral Engineering, University of California, Berkeley, California 64720 (United States)] [Department of Material Science and Mineral Engineering, University of California, Berkeley, California 64720 (United States); Gassman, A.; Rubin, M.D. [Lawrence Berkeley Laboratory, 1 Cyclotron Road, University of California, Berkeley, California 64720 (United States)] [Lawrence Berkeley Laboratory, 1 Cyclotron Road, University of California, Berkeley, California 64720 (United States)

1996-05-01T23:59:59.000Z

23

In-situ ellipsometry: Identification of surface terminations during GaN growth , T. Schmidtling1  

E-Print Network [OSTI]

1 In-situ ellipsometry: Identification of surface terminations during GaN growth C. Cobet1 , T SE, one is not limited to any special bulk or surface symmetry for optical characterisation. In PAMBE

Feenstra, Randall

24

Physics of electrical degradation in GaN high electron mobility transistors  

E-Print Network [OSTI]

The deployment of GaN high electron mobility transistors (HEMT) in RF power applications is currently bottlenecked by their limited reliability. Obtaining the required reliability is a difficult issue due to the high voltage ...

Joh, Jungwoo

2009-01-01T23:59:59.000Z

25

Watching GaN Nanowires Grow Eric A. Stach,*, Peter J. Pauzauskie, Tevye Kuykendall,  

E-Print Network [OSTI]

Vision, Lawrence Berkeley National Laboratory, Berkeley, California 94720, and Department of Chemistry, Uni and experimentally demonstrated that congruent sublimation of GaN is possible, which yields diatomic or polymeric

Yang, Peidong

26

Light extraction in individual GaN nanowires on Si for LEDs  

E-Print Network [OSTI]

GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

Zhou, Xiang

27

K.K. Gan ATLAS Pixel Week 1 New Results on Opto-Electronics  

E-Print Network [OSTI]

University #12;K.K. Gan ATLAS Pixel Week 2 Outline l VDC-I5 l VDC/DORIC-I5e l QA l BeO Opto-board l Summary reset from active high to low for ease of implementation by DCS ] slightly better performance at ±3s: Engineering Run #12;K.K. Gan ATLAS Pixel Week 9 l circuit boards: designed/built/tested l LabView programs

Gan, K. K.

28

Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels  

SciTech Connect (OSTI)

We report GaN thin film transistors (TFT) with a thermal budget below 250?°C. GaN thin films are grown at 200?°C by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD). HCPA-ALD-based GaN thin films are found to have a polycrystalline wurtzite structure with an average crystallite size of 9.3?nm. TFTs with bottom gate configuration are fabricated with HCPA-ALD grown GaN channel layers. Fabricated TFTs exhibit n-type field effect characteristics. N-channel GaN TFTs demonstrated on-to-off ratios (I{sub ON}/I{sub OFF}) of 10{sup 3} and sub-threshold swing of 3.3?V/decade. The entire TFT device fabrication process temperature is below 250?°C, which is the lowest process temperature reported for GaN based transistors, so far.

Bolat, S., E-mail: bolat@ee.bilkent.edu.tr, E-mail: aokyay@ee.bilkent.edu.tr; Tekcan, B. [Department of Electrical and Electronics Engineering, Bilkent University, Ankara 06800 (Turkey); UNAM, National Nanotechnology Research Center, Bilkent University, Ankara 06800 (Turkey); Ozgit-Akgun, C.; Biyikli, N. [UNAM, National Nanotechnology Research Center, Bilkent University, Ankara 06800 (Turkey); Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800 (Turkey); Okyay, A. K., E-mail: bolat@ee.bilkent.edu.tr, E-mail: aokyay@ee.bilkent.edu.tr [Department of Electrical and Electronics Engineering, Bilkent University, Ankara 06800 (Turkey); UNAM, National Nanotechnology Research Center, Bilkent University, Ankara 06800 (Turkey); Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800 (Turkey)

2014-06-16T23:59:59.000Z

29

Deposition of CVD diamond onto GaN P.W. May a,*, H.Y. Tsai b  

E-Print Network [OSTI]

of the polycrystalline diamond surface would prevent light from leaking out of the GaN layer and channel it to the endsDeposition of CVD diamond onto GaN P.W. May a,*, H.Y. Tsai b , W.N. Wang c , J.A. Smith a a School performed to deposit continuous layers of CVD diamond onto epitaxial GaN films. Such diamond coatings would

Bristol, University of

30

Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks: A method to map the free-carrier  

E-Print Network [OSTI]

Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten properties of two epitaxial-laterally overgrown GaN structures with tungsten masks in 1100 and 1120 direction by tungsten masks3 to prevent the in-diffusion of silicon and oxygen atoms in the overgrown GaN, which

Nabben, Reinhard

31

Journal of Crystal Growth 293 (2006) 273277 A study of semi-insulating GaN grown on AlN buffer/sapphire  

E-Print Network [OSTI]

-temperature GaN interlayer. In comparison with the normal GaN grown on sapphire, the crystal quality measurement results of GaN grown directly on an AlN buffer indicated that the as-grown-undoped Ga, or high density of edge-type dislocations [6­10]. However, Fe and other heavy metals tend to have reactor

Ozbay, Ekmel

32

Nanostructural engineering of nitride nucleation layers for GaN substrate dislocation reduction.  

SciTech Connect (OSTI)

With no lattice matched substrate available, sapphire continues as the substrate of choice for GaN growth, because of its reasonable cost and the extensive prior experience using it as a substrate for GaN. Surprisingly, the high dislocation density does not appear to limit UV and blue LED light intensity. However, dislocations may limit green LED light intensity and LED lifetime, especially as LEDs are pushed to higher current density for high end solid state lighting sources. To improve the performance for these higher current density LEDs, simple growth-enabled reductions in dislocation density would be highly prized. GaN nucleation layers (NLs) are not commonly thought of as an application of nano-structural engineering; yet, these layers evolve during the growth process to produce self-assembled, nanometer-scale structures. Continued growth on these nuclei ultimately leads to a fully coalesced film, and we show in this research program that their initial density is correlated to the GaN dislocation density. In this 18 month program, we developed MOCVD growth methods to reduce GaN dislocation densities on sapphire from 5 x 10{sup 8} cm{sup -2} using our standard delay recovery growth technique to 1 x 10{sup 8} cm{sup -2} using an ultra-low nucleation density technique. For this research, we firmly established a correlation between the GaN nucleation thickness, the resulting nucleation density after annealing, and dislocation density of full GaN films grown on these nucleation layers. We developed methods to reduce the nuclei density while still maintaining the ability to fully coalesce the GaN films. Ways were sought to improve the GaN nuclei orientation by improving the sapphire surface smoothness by annealing prior to the NL growth. Methods to eliminate the formation of additional nuclei once the majority of GaN nuclei were developed using a silicon nitride treatment prior to the deposition of the nucleation layer. Nucleation layer thickness was determined using optical reflectance and the nucleation density was determined using atomic force microscopy (AFM) and Nomarski microscopy. Dislocation density was measured using X-ray diffraction and AFM after coating the surface with silicon nitride to delineate all dislocation types. The program milestone of producing GaN films with dislocation densities of 1 x 10{sup 8} cm{sup -2} was met by silicon nitride treatment of annealed sapphire followed by the multiple deposition of a low density of GaN nuclei followed by high temperature GaN growth. Details of this growth process and the underlying science are presented in this final report along with problems encountered in this research and recommendations for future work.

Koleske, Daniel David; Lee, Stephen Roger; Lemp, Thomas Kerr; Coltrin, Michael Elliott; Cross, Karen Charlene; Thaler, Gerald

2009-07-01T23:59:59.000Z

33

Effect of Trapping on the Critical Voltage for Degradation in GaN High Electron Mobility Transistors  

E-Print Network [OSTI]

conditions, UV illumination decreases the critical voltage for the onset of degradation in gate current in Ga traps in the fresh state. Keywords­ GaN HEMTs, critical voltage, degradation, UV illuminationEffect of Trapping on the Critical Voltage for Degradation in GaN High Electron Mobility

del Alamo, Jesús A.

34

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect (OSTI)

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

35

Ge doped GaN with controllable high carrier concentration for plasmonic applications  

SciTech Connect (OSTI)

Controllable Ge doping in GaN is demonstrated for carrier concentrations of up to 2.4?×?10{sup 20} cm{sup ?3}. Low temperature luminescence spectra from the highly doped samples reveal band gap renormalization and band filling (Burstein-Moss shift) in addition to a sharp transition. Infrared ellipsometry spectra demonstrate the existence of electron plasma with an energy around 3500?cm{sup ?1} and a surface plasma with an energy around 2000?cm{sup ?1}. These findings open possibilities for the application of highly doped GaN for plasmonic devices.

Kirste, Ronny; Hoffmann, Marc P.; Sachet, Edward; Bobea, Milena; Bryan, Zachary; Bryan, Isaac; Maria, Jon-Paul; Collazo, Ramón; Sitar, Zlatko [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States)] [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); Nenstiel, Christian; Hoffmann, Axel [Institut f?r Festkörperphsyik, TU-Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)] [Institut f?r Festkörperphsyik, TU-Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)

2013-12-09T23:59:59.000Z

36

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect (OSTI)

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

37

X-ray detectors based on GaN Schottky diodes  

SciTech Connect (OSTI)

GaN Schottky diodes have been fabricated and tested as x-ray detectors in the range from 6 to 21 keV. The spectral response has been measured and is compared to its theoretical value. The study of the response and its temporal dynamics as a function of the bias allows to identify a photovoltaic behavior at low bias and a photoconductive one at larger reverse biases. The GaN diode turned out to be linear as a function of the incident power. The noise and detectivity are given and discussed.

Duboz, Jean-Yves; Frayssinet, Eric; Chenot, Sebastien [CRHEA, CNRS, Rue Bernard Gregory, Sophia Antipolis, F-06560 Valbonne (France); Reverchon, Jean-Luc [THALES R and T, Campus Polytechnique, 1 avenue Augustin Fresnel, F-91767 Palaiseau Cedex (France); Idir, Mourad [Synchrotron SOLEIL L'Orme des Merisiers, Saint-Aubin-BP 48 91192, GIF-sur-Yvette Cedex (France)

2010-10-18T23:59:59.000Z

38

Design and Experimental Characterization of an Erbium Doped GaN Waveguide  

E-Print Network [OSTI]

temperatures as compared to other semiconductor host materials such as Si and GaAs. 1540nm optical emission in Er- doped waveguide has also been demonstrated using a 365nm light emitting diode as the optical pumping source. UV pumping above the GaN bandgap....9 eV In Table 2 - 1, GaN is the semiconductor material with the largest bandgap (SiO2 is not a semiconductor), which has proven to be an accomplished host of erbium, with reports of fabrication of light- emitting diodes operating in the visible...

Wang, Qian

2012-05-31T23:59:59.000Z

39

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect (OSTI)

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

40

Piezo-Phototronic Effect on Electroluminescence Properties of p-Type GaN Thin Films  

E-Print Network [OSTI]

significance on the practical applications of GaN in optoelectronic devices under a working environment where,9 Recent studies have shown its applications in improving the performance of optoelectronic devices based result in great influence for this most popular III-V semiconductor used in optoelectronic devices

Wang, Zhong L.

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Optimal Decentralized Protocol for Electric Vehicle Charging Lingwen Gan Ufuk Topcu Steven Low  

E-Print Network [OSTI]

Abstract-- Motivated by the power-grid-side challenges in the integration of electric vehicles, we proposeOptimal Decentralized Protocol for Electric Vehicle Charging Lingwen Gan Ufuk Topcu Steven Low a decentralized protocol for negotiating day-ahead charging schedules for electric vehicles. The overall goal

Low, Steven H.

42

K.K. Gan ATLAS Tracker Upgrade Workshop 1 Nov 5, 2008  

E-Print Network [OSTI]

Upgrade Workshop 5 Optical Fiber Irradiation Corning Infinicor GRIN fiber irradiated with 's from Co60 Upgrade Workshop 6 Optical Fiber Irradiation assume L = 3,000 fb-1 including safety factor of 1 Radiation-Hardness of Optical Components #12;K.K. Gan ATLAS Tracker Upgrade Workshop 2 Outline

Gan, K. K.

43

K.K. Gan ATLAS Tracker Upgrade Workshop 1 Irradiation Results and Transmission on  

E-Print Network [OSTI]

Power vs Dosage all VCSELs still produce optical power at SLHC dosage should irradiate at lower Workshop 14 Post-Irradiation Analysis all arrays except ULM 5 G still produce optical power post-irradiationK.K. Gan ATLAS Tracker Upgrade Workshop 1 Irradiation Results and Transmission on Small Cables

Gan, K. K.

44

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN  

E-Print Network [OSTI]

, and photodetectors have been developed, but the optical transitions in GaN:Mg are still not well under- stood.2 Mg.1007/s11664-012-2342-9 Ã? 2012 TMS #12;irradiation during growth affected the material, but the nature demonstrate point defect control in Mg-doped GaN, by UV irradiation during growth. First, details

Nabben, Reinhard

45

K.K. Gan ATLAS Tracker Ungrade Workshop 1 Bandwidths of Micro Twisted-Pair Cables  

E-Print Network [OSTI]

/fall time after irradiation? What is optical power after irradiation? What current is needed for annealing Spliced SIMM-GRIN Fibers and Radiation Hardness of PIN/VCSEL Dec 8, 2006 W. Fernando, K.K. Gan, A. Law, H Bandwidth of micro twisted-pair cables Bandwidth of fusion spliced SIMM-GRIN fibers Radiation hardness

Gan, K. K.

46

K.K. Gan IPRD06 1 Bandwidths of Micro Twisted-Pair Cables  

E-Print Network [OSTI]

A or more What is rise/fall time after irradiation? What is optical power after irradiation? What currentK.K. Gan IPRD06 1 Bandwidths of Micro Twisted-Pair Cables and Fusion Spliced SIMM-GRIN Fibers Introduction Bandwidth of micro twisted-pair cables Bandwidth of fusion spliced SIMM-GRIN fibers Radiation

Gan, K. K.

47

Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment  

E-Print Network [OSTI]

Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment Received 15 July 2002; accepted 27 December 2002 An electrochemical surface treatment has been developed to the large power consumption and noise levels that can be present in circuits that incorporate such devices.1

Yu, Edward T.

48

VISIBLE AND INFRARED RARE-EARTH ACTIVATED ELECTROLUMINESCENCE FROM ERBIUM DOPED GaN  

E-Print Network [OSTI]

. At the same time novel work is being conducted using rare earth elements as sources of light emission. Results. III-V semiconductors doped with rare-earth elements have also been used10VISIBLE AND INFRARED RARE-EARTH ACTIVATED ELECTROLUMINESCENCE FROM ERBIUM DOPED GaN M. Garter*, R

Steckl, Andrew J.

49

An Effective Subdivision Algorithm for Diffuse Scattering of Ray Tracing Mingming Gan1  

E-Print Network [OSTI]

Department of Electrical and Information Technology, Lund University, Lund, Sweden Contact: gan@ftw.at Abstract Accurate modeling of electromagnetic wave propagation by means of ray tracing (RT) includes by evaluating the power delay profile (PDP), delay spread and angular spread. 1 Introduction Diffuse scattering

Zemen, Thomas

50

Lattice Protein Folding With Two and Four-Body Statistical Hin Hark Gan,1  

E-Print Network [OSTI]

Lattice Protein Folding With Two and Four-Body Statistical Potentials Hin Hark Gan,1 Alexander/sequence compatibility of proteins,5,6 homology modeling,7 and protein folding simulations.8 ­10 Currently, most structures. Multibody potentials may help improve our understanding of the cooperativity of protein folding

Schlick, Tamar

51

Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes  

SciTech Connect (OSTI)

We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve tunnel injection, relatively low composition AlGaN is used for n- and p-type layers to simultaneously take advantage of effective band alignment and efficient doping. The small height of the quantum dots results in short-wavelength emission and are simultaneously an effective tool to fight the reduction of oscillator strength from quantum-confined Stark effect due to polarization fields. The strong quantum confinement results in room-temperature electroluminescence peaks at 261 and 340 nm, well above the 365 nm bandgap of bulk GaN. The demonstration opens the doorway to exploit many varied features of quantum dot physics to realize high-efficiency short-wavelength light sources.

Verma, Jai; Kandaswamy, Prem Kumar; Protasenko, Vladimir; Verma, Amit; Grace Xing, Huili; Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)] [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)

2013-01-28T23:59:59.000Z

52

Ultra High p-doping Material Research for GaN Based Light Emitters  

SciTech Connect (OSTI)

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

Vladimir Dmitriev

2007-06-30T23:59:59.000Z

53

High Efficiency m-plane LEDs on Low Defect Density Bulk GaN Substrates  

SciTech Connect (OSTI)

Solid-state lighting is a key technology for reduction of energy consumption in the US and worldwide. In principle, by replacing standard incandescent bulbs and other light sources with sources based on light-emitting diodes (LEDs), ultimate energy efficiency can be achieved. The efficiency of LEDs has improved tremendously over the past two decades, however further progress is required for solid- state lighting to reach its full potential. The ability of an LED at converting electricity to light is quantified by its internal quantum efficiency (IQE). The material of choice for visible LEDs is Gallium Nitride (GaN), which is at the basis of blue-emitting LEDs. A key factor limiting the performance of GaN LEDs is the so-called efficiency droop, whereby the IQE of the LED decreases significantly at high current density. Despite decades of research, efficiency droop remains a major issue. Since high-current operation is necessary for practical lighting applications, reducing droop is a major challenge for the scientific community and the LED industry. Our approach to solving the droop issue is the use of newly available low-defect-density bulk GaN non-polar substrates. In contrast to the standard foreign substrates (sapphire, silicon carbide, silicon) used in the industry, we have employed native bulk GaN substrates with very low defect density, thus ensuring exquisite material quality and high IQE. Whereas all commercial LEDs are grown along the c-plane crystal direction of GaN, we have used m-plane non-polar substrates; these drastically modify the physical properties of the LED and enable a reduction of droop. With this approach, we have demonstrated very high IQE performance and low droop. Our results focused on violet and blue LEDs. For these, we have demonstrated very high peak IQEs and current droops of 6% and 10% respectively (up to a high current density of 200A.cm-2). All these results were obtained under electrical operation. These high IQE and low droop values are in line with the program’s milestones. They demonstrate that bulk non-polar GaN substrates represent a disruptive technology for LED performance. Application of this technology to real-world products is feasible, provided that the cost of GaN substrates is compatible with the market’s requirement.

David, Aurelien

2012-10-15T23:59:59.000Z

54

Ab initio density functional theory study of non-polar (101{sup ¯}0),?(112{sup ¯}0) and semipolar (202{sup ¯}1) GaN surfaces  

SciTech Connect (OSTI)

The atomic structures of non-polar GaN(101{sup ¯}0),?(112{sup ¯}0) and semipolar GaN(202{sup ¯}1),?(202{sup ¯}1{sup ¯}) surfaces were studied using ab initio calculations within density functional theory. The bulk-like truncated (1?×?1) structure with buckled Ga-N or Ga-Ga dimers was found stable on the non-polar GaN(101{sup ¯}0) surface in agreement with previous works. Ga-N heterodimers were found energetically stable on the GaN(112{sup ¯}0)-(1?×?1) surface. The formation of vacancies and substitution site defects was found unfavorable for non-polar GaN surfaces. Semipolar GaN(202{sup ¯}1)-(1?×?1) surface unit cells consist of non-polar (101{sup ¯}0) and semipolar (101{sup ¯}1) nano-facets. The (101{sup ¯}1) nano-facets consist of two-fold coordinated atoms, which form N-N dimers within a (2?×?1) surface unit cell on a GaN(202{sup ¯}1) surface. Dimers are not formed on the GaN(202{sup ¯}1{sup ¯}) surface. The stability of the surfaces with single (101{sup ¯}0) or (101{sup ¯}1) nano-facets was analyzed. A single non-polar (101{sup ¯}0)-(1?×?1) nano-facet was found stable on the GaN(202{sup ¯}1) surface, but unstable on the GaN(202{sup ¯}1{sup ¯}) surface. A single (101{sup ¯}1) nano-facet was found unstable. Semipolar GaN surfaces with (202{sup ¯}1) and (202{sup ¯}1{sup ¯}) polarity can be stabilized with a Ga overlayer at Ga-rich experimental conditions.

Mutombo, P.; Romanyuk, O., E-mail: romanyuk@fzu.cz [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 16200 Prague (Czech Republic)

2014-05-28T23:59:59.000Z

55

Substrate-dependent wetting layer formation during GaN growth: Impact on the morphology of the films  

SciTech Connect (OSTI)

We have compared epitaxial growth of GaN films on 6H-SiC(0001)-({radical}(3)x{radical}(3))R30 deg. -Ga and on (0001)-sapphire. Predeposited Ga layers were nitrided by ion beam assisted molecular beam epitaxy. Whereas on SiC the initially deposited Ga covers the substrate surface completely, on sapphire only Ga droplets are present. The different distribution of the predeposited Ga affects the morphology of GaN significantly. Scanning electron microscopy and atomic force microscopy analysis of the grown films show that the complete wetting of the SiC substrate with Ga enhances finally the size and the flatness of GaN terraces and thus the quality of the film. X-ray photoelectron spectroscopy measurements reveal that metallic Ga resides also on top of the GaN films during the growth.

Sidorenko, A.; Peisert, H.; Neumann, H.; Chasse, T. [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany); Leibniz-Institut fuer Oberflaechenmodifizierung e.V. Permoserstrasse 15, D-04318 Leipzig (Germany); Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany)

2007-08-15T23:59:59.000Z

56

Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN  

SciTech Connect (OSTI)

The dependence of deep level defect incorporation in m-plane GaN films grown by metal-organic chemical vapor deposition on bulk m-plane GaN substrates as a function of growth temperature (T{sub g}) and T{sub g} ramping method was investigated using deep level optical spectroscopy. Understanding the influence of T{sub g} on GaN deep level incorporation is important for InGaN/GaN multi-quantum well (MQW) light emitting diodes (LEDs) and laser diodes (LDs) because GaN quantum barrier (QB) layers are grown much colder than thin film GaN to accommodate InGaN QW growth. Deep level spectra of low T{sub g} (800?°C) GaN films grown under QB conditions were compared to deep level spectra of high T{sub g} (1150?°C) GaN. Reducing T{sub g}, increased the defect density significantly (>50×) through introduction of emergent deep level defects at 2.09?eV and 2.9?eV below the conduction band minimum. However, optimizing growth conditions during the temperature ramp when transitioning from high to low T{sub g} substantially reduced the density of these emergent deep levels by approximately 40%. The results suggest that it is important to consider the potential for non-radiative recombination in QBs of LED or LD active regions, and tailoring the transition from high T{sub g} GaN growth to active layer growth can mitigate such non-radiative channels.

Armstrong, A. M., E-mail: aarmstr@sandia.gov [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Kelchner, K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)] [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Nakamura, S.; DenBaars, S. P. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States) [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106 (United States); Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)] [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2013-12-02T23:59:59.000Z

57

Photoluminescence study of the 1.047 eV emission in GaN K. Pressela)  

E-Print Network [OSTI]

GaN/ AlGaN blue green light emitting diode, which has a much higher quantum efficiency than the SiC blue light emitting diode, became possible.2 Presently the wide bandgap semi- conductor GaN is intensively. Especially the 1.19 eV is very intense. Thus one can think of developing a light emitting diode in the near

Nabben, Reinhard

58

Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes  

SciTech Connect (OSTI)

We report the growth of GaN micro-rods and coaxial quantum-well heterostructures on graphene films, together with structural and optical characterization, for applications in flexible optical devices. Graphene films were grown on Cu foil by means of chemical vapor deposition, and used as the substrates for the growth of the GaN micro-rods, which were subsequently transferred onto SiO{sub 2}/Si substrates. Highly Si-doped, n-type GaN micro-rods were grown on the graphene films using metal–organic chemical vapor deposition. The growth and vertical alignment of the GaN micro-rods, which is a critical factor for the fabrication of high-performance light-emitting diodes (LEDs), were characterized using electron microscopy and X-ray diffraction. The GaN micro-rods exhibited promising photoluminescence characteristics for optoelectronic device applications, including room-temperature stimulated emission. To fabricate flexible LEDs, In{sub x}Ga{sub 1–x}N/GaN multiple quantum wells and a p-type GaN layer were deposited coaxially on the GaN micro-rods, and transferred onto Ag-coated polymer substrates using lift-off. Ti/Au and Ni/Au metal layers were formed to provide electrical contacts to the n-type and p-type GaN regions, respectively. The micro-rod LEDs exhibited intense emission of visible light, even after transfer onto the flexible polymer substrate, and reliable operation was achieved following numerous cycles of mechanical deformation.

Chung, Kunook; Beak, Hyeonjun; Tchoe, Youngbin; Oh, Hongseok; Yi, Gyu-Chul, E-mail: gcyi@snu.ac.kr [Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); Yoo, Hyobin; Kim, Miyoung [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of)

2014-09-01T23:59:59.000Z

59

Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers.  

SciTech Connect (OSTI)

GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the art HEMT transistors and amplifiers.

Kurtz, Steven Ross; Follstaedt, David Martin; Wright, Alan Francis; Baca, Albert G.; Briggs, Ronald D.; Provencio, Paula Polyak; Missert, Nancy A.; Allerman, Andrew Alan; Marsh, Phil F.; Koleske, Daniel David; Lee, Stephen Roger; Shul, Randy John; Seager, Carleton Hoover; Tigges, Christopher P.

2005-12-01T23:59:59.000Z

60

Subpicosecond time-resolved Raman studies of nonequilibrium excitations in wurtzite GaN  

SciTech Connect (OSTI)

Non-equilibrium electron distributions as well as phonon dynamics in wurtzite GaN have been measured by subpicosecond time-resolved Raman spectroscopy. The experimental results have demonstrated that for electron densities n {ge} 5 {times} 10{sup 17} cm{sup {minus}3}, the non-equilibrium electron distributions in wurtzite GaN can be very well described by Fermi-Dirac distribution functions with the temperature of electrons substantially higher than that of the lattice. The population relaxation time of longitudinal optical phonons was directly measured to be {tau} {approx_equal} 5 {+-} 1 ps at T = 25 K. The experimental results on the temperature dependence of the lifetime of longitudinal optical phonons suggest that the primary decay channels for these phonons are the decay into (1) one transverse optical phonon and one high energy, longitudinal or transverse acoustical phonons; and (2) one transverse optical phonon and one E{sub 2} phonon.

Tsen, K.T.; Ferry, D.K. [Arizona State Univ., Tempe, AZ (United States). Dept. of Physics and Astronomy; Joshi, R.P. [Old Dominion Univ., Norfolk, VA (United States). Dept. of Electrical Engineering; Botchkarev, A.; Sverdlov, B.; Salvador, A.; Morkoc, H. [Univ. of Illinois, Urbana, IL (United States). Coordinated Science Lab.

1997-12-31T23:59:59.000Z

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Strong light-matter coupling in ultrathin double dielectric mirror GaN microcavities  

SciTech Connect (OSTI)

Strong light-matter coupling is demonstrated at low temperature in an ultrathin GaN microcavity fabricated using two silica/zirconia Bragg mirrors, in addition to a three-period epitaxial (Al,Ga)N mirror serving as an etch stop and assuring good quality of the overgrown GaN. The {lambda}/2 cavity is grown by molecular beam epitaxy on a Si substrate. Analysis of angle-resolved data reveal key features of the strong coupling regime in both reflectivity and transmission spectra at 5 K: anticrossing with a normal mode splitting of 43{+-}2 meV and 56{+-}2 meV for reflectivity and transmission, respectively, and narrowing of the lower polariton linewidth near resonance.

Bejtka, K.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom); CRHEA-CNRS, Rue Bernard Gregory, Parc Sophia Antipolis, 06560 Valbonne (France); Reveret, F.; Vasson, A.; Leymarie, J. [LASMEA, UMR 6602 UBP/CNRS, 24 Avenue des Landais, F-63177 Aubiere Cedex (France); Edwards, P. R. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom); Sellers, I. R.; Duboz, J. Y.; Leroux, M.; Semond, F. [CRHEA-CNRS, Rue Bernard Gregory, Parc Sophia Antipolis, 06560 Valbonne (France)

2008-06-16T23:59:59.000Z

62

Spectroscopic study of semipolar (112{sup ¯}2)-HVPE GaN exhibiting high oxygen incorporation  

SciTech Connect (OSTI)

Spatially resolved luminescence and Raman spectroscopy investigations are applied to a series of (112{sup ¯}2)-GaN samples grown by hydride vapor phase epitaxy (HVPE) grown over an initial layer deposited by metal organic vapor phase epitaxy on patterned sapphire substrates. Whereas these two differently grown GaN layers are crystallographically homogeneous, they differ largely in their doping level due to high unintentional oxygen uptake in the HVPE layer. This high doping shows up in luminescence spectra, which can be explained by a free-electron recombination band for which an analytical model considering the Burstein-Moss shift, conduction band tailing, and the bandgap renormalization is included. Secondary ion mass spectrometry, Raman spectroscopy, and Hall measurements concordantly determine the electron density to be above 10{sup 19?}cm{sup ?3}. In addition, the strain state is assessed by Raman spectroscopy and compared to a finite element analysis.

Schustek, Philipp, E-mail: philipp.schustek@gmail.com [Institute of Quantum Matter, Ulm University, 89081 Ulm (Germany); Research Unit, Parc Sanitari Sant Joan de Déu and Foundation Sant Joan de Déu, Esplugues de Llobregat, 08950, Barcelona (Spain); Hocker, Matthias; Thonke, Klaus [Institute of Quantum Matter, Ulm University, 89081 Ulm (Germany); Klein, Martin; Scholz, Ferdinand [Institute of Optoelectronics, Ulm University, 89081 Ulm (Germany); Simon, Ulrich [Scientific Computing Centre Ulm, Ulm University, 89081 Ulm (Germany)

2014-10-28T23:59:59.000Z

63

Charge transfer in Fe-doped GaN: The role of the donor  

SciTech Connect (OSTI)

Several nitride-based device structures would benefit from the availability of high quality, large-area, freestanding semi-insulating GaN substrates. Due to the intrinsic n-type nature of GaN, however, the incorporation of compensating centers such as Fe is necessary to achieve the high resistivity required. We are using electron paramagnetic resonance (EPR) to explore charge transfer in 450 um thick GaN:Fe plates to understand the basic mechanisms related to compensation so that the material may be optimized for device applications. The results suggest that the simple model based on one shallow donor and a single Fe level is insufficient to describe compensation. Rather, the observation of the neutral donor and Fe3+ indicates that either the two species are spatially segregated or additional compensating and donor defects must be present.

Sunay, Ustun; Dashdorj, J.; Zvanut, M. E.; Harrison, J. G. [Department of Physics, University of Alabama at Birmingham, 1300 University Blvd., CH 310, Birmingham, Alabama 35294-1170 (United States); Leach, J. H.; Udwary, K. [Kyma Technologies, 8829 Midway West Rd., Raleigh, North Carolina 27617 (United States)

2014-02-21T23:59:59.000Z

64

Structure and electronic properties of mixed (a?+?c) dislocation cores in GaN  

SciTech Connect (OSTI)

Classical atomistic models and atomic-resolution scanning transmission electron microscopy studies of GaN films reveal that mixed (a?+?c)-type dislocations have multiple different core structures, including a dissociated structure consisting of a planar fault on one of the (12{sup ¯}10) planes terminated by two different partial dislocations. Density functional theory calculations show that all cores introduce localized states into the band gap, which affects device performance.

Horton, M. K., E-mail: m.horton11@imperial.ac.uk [Department Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Rhode, S. L. [Department Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Moram, M. A. [Department Materials, Imperial College London, Exhibition Road, London SW7 2AZ (United Kingdom); Department Materials Science and Metallurgy, University of Cambridge, Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

2014-08-14T23:59:59.000Z

65

K.K. Gan IWORID-8 1 Bandwidths of Micro Twisted-Pair Cables  

E-Print Network [OSTI]

-V Characteristics very good optical power candidate for irradiation study Optowell TP85-LCP0N 0.0 0.5 1.0 1.5 2K.K. Gan IWORID-8 1 Bandwidths of Micro Twisted-Pair Cables and Fusion Spliced SIMM-GRIN Fibers Bandwidth of micro twisted-pair cables Bandwidth of fusion spliced SIMM-GRIN fibers Measurement of VCSEL

Gan, K. K.

66

K.K. Gan DPF/JPS06 1 Bandwidths of Micro Twisted-Pair Cables  

E-Print Network [OSTI]

/fall time after irradiation? What is optical power after irradiation? What current is needed for annealing during irradiation SLHC AOC 71 MRad 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0 100 200 300 400 Time (Hours) DataOpticalPK.K. Gan DPF/JPS06 1 Bandwidths of Micro Twisted-Pair Cables and Fusion Spliced SIMM-GRIN Fibers

Gan, K. K.

67

K.K. Gan US Pixel Meeting 1 Tracker Optical Link Upgrade  

E-Print Network [OSTI]

-V Characteristics very good optical power candidate for irradiation study AOC HFE419X-441 0.0 0.5 1.0 1.5 2.0 2 Pixel Meeting 10 I-L and I-V Characteristics very good optical power candidate for irradiation study 2500 OpticalPower(µW) #12;K.K. Gan US Pixel Meeting 11 Bandwidth of Spliced Fiber 29 m spliced fiber20

Gan, K. K.

68

K.K. Gan ATLAS Pixel Week 1 New Results on Opto-Electronics  

E-Print Network [OSTI]

with lower thresholds with BPM/DRX ] opto-board design is compatible with BPM/DRX PIN Current Thresholds with BPM/DRX 0 5 10 15 20 25 30 35 link#1 link#2 link#3 link#4 link#5 link#6 link#7 Ipin(mA) Opto-Board on Test Board Opto-Board on Test Board with BPM/DRX #12;K.K. Gan ATLAS Pixel Week 8 l one irradiated VCSEL

Gan, K. K.

69

Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties  

SciTech Connect (OSTI)

The first step of a multi-cycle rapid thermal annealing process was systematically studied. The surface, structure, and optical properties of Mg implanted GaN thin films annealed at temperatures ranging from 900 to 1200?°C were investigated by Raman spectroscopy, photoluminescence, UV-visible spectroscopy, atomic force microscopy, and Nomarski microscopy. The GaN thin films are capped with two layers of in-situ metal organic chemical vapor deposition -grown AlN and annealed in 24 bar of N{sub 2} overpressure to avoid GaN decomposition. The crystal quality of the GaN improves with increasing annealing temperature as confirmed by UV-visible spectroscopy and the full widths at half maximums of the E{sub 2} and A{sub 1} (LO) Raman modes. The crystal quality of films annealed above 1100?°C exceeds the quality of the as-grown films. At 1200?°C, Mg is optically activated, which is determined by photoluminescence measurements. However, at 1200?°C, the GaN begins to decompose as evidenced by pit formation on the surface of the samples. Therefore, it was determined that the optimal temperature for the first step in a multi-cycle rapid thermal anneal process should be conducted at 1150?°C due to crystal quality and surface morphology considerations.

Greenlee, Jordan D., E-mail: jordan.greenlee.ctr@nrl.navy.mil [National Research Council, 500 Fifth St. NW, Washington, DC 20001 (United States); Feigelson, Boris N.; Anderson, Travis J.; Hite, Jennifer K.; Mastro, Michael A.; Eddy, Charles R.; Hobart, Karl D.; Kub, Francis J. [Naval Research Laboratory, 4555 Overlook Ave SW, Washington, DC 20375 (United States); Tadjer, Marko J. [American Society for Engineering Education, 1818 N St. NW, Washington, DC 20036 (United States)

2014-08-14T23:59:59.000Z

70

Ab initio study on noncompensated CrO codoping of GaN for enhanced solar energy conversion  

SciTech Connect (OSTI)

We describe a novel photocatalyst obtained by codoping GaN with CrO, according to a new "noncompensated" codoping concept based on first-principles calculations. The approach enables controllable narrowing of the GaN band gap with significantly enhanced carrier mobility and photocatalytic activity in the visible light region and thus offers immense potential for application in solar energy conversion, water splitting, and a variety of solar-assisted photocatalysis. Our calculations indicate that the formation energy for the cation doping is greatly reduced by noncompensated codoping with an anion. Although Cr doping alone can split the band gap with the formation of an intermediate band, the mobility is low due to carrier trapping by the localized states. The first-principles calculations also demonstrate that CrO codoping of GaN shifts the Fermi level into the conduction band resulting in high carrier density and mobility.

Pan, Hui [ORNL; Gu, Baohua [ORNL; Eres, Gyula [ORNL; Zhang, Zhenyu [ORNL

2010-03-01T23:59:59.000Z

71

High temperature electron spin dynamics in bulk cubic GaN: Nanosecond spin lifetimes far above room-temperature  

SciTech Connect (OSTI)

The electron spin dynamics in n-doped bulk cubic GaN is investigated for very high temperatures from 293?K up to 500?K by time-resolved Kerr-rotation spectroscopy. We find extraordinarily long spin lifetimes exceeding 1?ns at 500?K. The temperature dependence of the spin relaxation time is in qualitative agreement with predictions of Dyakonov-Perel theory, while the absolute experimental times are an order of magnitude shorter than predicted. Possible reasons for this discrepancy are discussed, including the role of phase mixtures of hexagonal and cubic GaN as well as the impact of localized carriers.

Buß, J. H.; Schaefer, A.; Hägele, D.; Rudolph, J. [Arbeitsgruppe Spektroskopie der kondensierten Materie, Ruhr-Universität Bochum, Universitätsstraße 150, D-44780 Bochum (Germany); Schupp, T.; As, D. J. [Department of Physics, University of Paderborn, Warburger Str. 100, D-33095 Paderborn (Germany)

2014-11-03T23:59:59.000Z

72

Nanoscale size dependence parameters on lattice thermal conductivity of Wurtzite GaN nanowires  

SciTech Connect (OSTI)

Graphical abstract: Temperature dependence of calculated lattice thermal conductivity of Wurtzite GaN nanowires. Highlights: Black-Right-Pointing-Pointer A modified Callaway model is used to calculate lattice thermal conductivity of Wurtzite GaN nanowires. Black-Right-Pointing-Pointer A direct method is used to calculate phonon group velocity for these nanowires. Black-Right-Pointing-Pointer 3-Gruneisen parameter, surface roughness, and dislocations are successfully investigated. Black-Right-Pointing-Pointer Dislocation densities are decreases with the decrease of wires diameter. -- Abstract: A detailed calculation of lattice thermal conductivity of freestanding Wurtzite GaN nanowires with diameter ranging from 97 to 160 nm in the temperature range 2-300 K, was performed using a modified Callaway model. Both longitudinal and transverse modes are taken into account explicitly in the model. A method is used to calculate the Debye and phonon group velocities for different nanowire diameters from their related melting points. Effect of Gruneisen parameter, surface roughness, and dislocations as structure dependent parameters are successfully used to correlate the calculated values of lattice thermal conductivity to that of the experimentally measured curves. It was observed that Gruneisen parameter will decrease with decreasing nanowire diameters. Scattering of phonons is assumed to be by nanowire boundaries, imperfections, dislocations, electrons, and other phonons via both normal and Umklapp processes. Phonon confinement and size effects as well as the role of dislocation in limiting thermal conductivity are investigated. At high temperatures and for dislocation densities greater than 10{sup 14} m{sup -2} the lattice thermal conductivity would be limited by dislocation density, but for dislocation densities less than 10{sup 14} m{sup -2}, lattice thermal conductivity would be independent of that.

Mamand, S.M., E-mail: soran.mamand@univsul.net [Department of Physics, College of Science, University of Sulaimani, Sulaimanyah, Iraqi Kurdistan (Iraq); Omar, M.S. [Department of Physics, College of Science, University of Salahaddin, Arbil, Iraqi Kurdistan (Iraq)] [Department of Physics, College of Science, University of Salahaddin, Arbil, Iraqi Kurdistan (Iraq); Muhammad, A.J. [Department of Physics, College of Science, University of Kirkuk, Kirkuk (Iraq)] [Department of Physics, College of Science, University of Kirkuk, Kirkuk (Iraq)

2012-05-15T23:59:59.000Z

73

Metallicity of InN and GaN surfaces exposed to NH{sub 3}.  

SciTech Connect (OSTI)

A systematic study of energies and structures of InN and GaN (0001) surfaces exposed to NH{sub 3} and its decomposition products was performed with first-principles methods. A phenomenological model including electron counting contributions is developed based on calculated DFT energies and is used to identify low-energy structures. These predictions are checked with additional DFT calculations. The equilibrium phase diagrams are found to contain structures that violate the electron counting rule. Densities of states for these structures indicate n-type conductivity, consistent with available experimental results.

Walkosz, W.; Zapol, P.; Stephenson, G. B. (Materials Science Division)

2012-01-01T23:59:59.000Z

74

Evaluation of GaN substrates grown in supercritical basic ammonia  

SciTech Connect (OSTI)

GaN crystals grown by the basic ammonothermal method were investigated for their use as substrates for device regrowth. X-ray diffraction analysis indicated that the substrates contained multiple grains while secondary ion mass spectroscopy (SIMS) revealed a high concentration of hydrogen, oxygen, and sodium. Despite these drawbacks, the emission from the light emitting diode structures grown by metal organic chemical vapor deposition on both the c-plane and m-plane epitaxial wafers was demonstrated. The SIMS depth profiles showed that the diffusion of the alkali metal from the substrate into the epitaxial film was small, especially in the m-direction.

Saito, Makoto; Yamada, Hisashi; Iso, Kenji; Sato, Hitoshi; Hirasawa, Hirohiko; Kamber, Derrick S.; Hashimoto, Tadao; Baars, Steven P. den; Speck, James S.; Nakamura, Shuji [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2009-02-02T23:59:59.000Z

75

Damage Evolution in GaN Under MeV Heavy Ion Implantation. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed Newcatalyst phases onOrganizationElectronic2005-2007 BudgetFlightEvolution in GaN

76

Atomistic simulation of Er irradiation induced defects in GaN nanowires  

SciTech Connect (OSTI)

Classical molecular dynamics simulation was used to irradiate a GaN nanowire with rear-earth erbium (Er). Ten cumulative irradiations were done using an ion energy of 37.5?keV on a 10?×?10?nm{sup 2} surface area which corresponds to a fluence of 1?×?10{sup 13?}cm{sup ?2}. We studied the location and types of defects produced in the irradiation. Er implantation leads to a net positive (expansion) strain in the nanowire and especially at the top region a clear expansion has been observed in the lateral and axial directions. The lattice expansion is due to the hydrostatic strain imposed by a large number of radiation induced defects at the top of the NW. Due to the large surface-to-volume ratio, most of the defects were concentrated at the surface region, which suggests that the experimentally observed yellow luminescence (YL) in ion implanted GaN NWs arises from surface defects. We observed big clusters of point defects and vacancy clusters which are correlated with stable lattice strain and the YL band, respectively.

Ullah, M. W., E-mail: mohammad.ullah@helsinki.fi; Kuronen, A.; Djurabekova, F.; Nordlund, K. [Department of Physics, University of Helsinki, P.O. Box 64, FIN-00014 (Finland); Stukowski, A. [Technische Universität Darmstadt, 64287 Darmstadt (Germany)

2014-09-28T23:59:59.000Z

77

A Transient Stability Constrained Optimal Power Flow Deqiang Gan (M) Robert J. Thomas (F) Ray D. Zimmerman (M)  

E-Print Network [OSTI]

1 A Transient Stability Constrained Optimal Power Flow Deqiang Gan (M) Robert J. Thomas (F) Ray D. The methodology involves a stability constrained Optimal Power Flow (OPF). The theoretical development between controllable generation dispatch and indices such as an energy margin, rotor angles, etc

78

OPTIMIZATION OF GaN WINDOW LAYER FOR InGaN SOLAR CELLS USING POLARIZATION EFFECT  

E-Print Network [OSTI]

on the design of wide-band gap GaN window layers for InGaN solar cells. Window layers serve to passivate the top into account during design of the solar cell to improve its collection efficiency. Previously, we have. The present work is a subset of the design optimization process for such solar cells, where we focus

Honsberg, Christiana

79

Role of Embedded Clustering in Dilute Magnetic Semiconductors: Cr Doped GaN X. Y. Cui,1  

E-Print Network [OSTI]

, typically 5 (20­30) times smaller for Cr-based (Mn-based) III-V DMS than the value expected, 3 B= Cr4 BRole of Embedded Clustering in Dilute Magnetic Semiconductors: Cr Doped GaN X. Y. Cui,1 J. E configurations coexist and the statistical distribution and associated magnetism will depend sensitively

Medvedeva, Julia E.

80

A Comparison of Magnesium and Beryllium Acceptors in GaN Grown by rf-Plasma Assisted Molecular Beam Epitaxy  

E-Print Network [OSTI]

A Comparison of Magnesium and Beryllium Acceptors in GaN Grown by rf-Plasma Assisted Molecular Beam Evans and Associates, Sunnyvale, CA 94086 ABSTRACT Step-doped structures of both magnesium and beryllium activation energy of approximately 100 meV. INTRODUCTION While magnesium is currently the most

Myers, Tom

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81

Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers  

E-Print Network [OSTI]

Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers C. Wetzel, Nagoya, Japan Received 11 December 1995; accepted for publication 21 February 1996 Infrared reflection, their alloys and potential substrates need to be investigated as well. Here we present a study of the infrared

Wetzel, Christian M.

82

Band gap tuning in GaN through equibiaxial in-plane strains S. K. Yadav,2  

E-Print Network [OSTI]

in photovoltaics and light emission diodes LEDs . The InGaN system has been intensively studied during the past to the large atomic size mismatch between Ga and In.3 Thus, other methods to tune the band gap are needed for potential appli- cations of GaN and related materials systems. It is well-known that the structure

Alpay, S. Pamir

83

Atom probe tomography studies of Al{sub 2}O{sub 3} gate dielectrics on GaN  

SciTech Connect (OSTI)

Atom probe tomography was used to achieve three-dimensional characterization of in situ Al{sub 2}O{sub 3}/GaN structures grown by metal organic chemical vapor deposition (MOCVD). Al{sub 2}O{sub 3} dielectrics grown at three different temperatures of 700, 900, and 1000?°C were analyzed and compared. A low temperature GaN cap layer grown atop Al{sub 2}O{sub 3} enabled a high success rate in the atom probe experiments. The Al{sub 2}O{sub 3}/GaN interfaces were found to be intermixed with Ga, N, and O over the distance of a few nm. Impurity measurements data showed that the 1000?°C sample contains higher amounts of C (4?×?10{sup 19}/cm{sup 3}) and lower amounts of H (7?×?10{sup 19}/cm{sup 3}), whereas the 700?°C sample exhibits lower C impurities (<10{sup 17}/cm{sup 3}) and higher H incorporation (2.2?×?10{sup 20}/cm{sup 3}). On comparing with Al{sub 2}O{sub 3} grown by atomic layer deposition (ALD), it was found that the MOCVD Al{sub 2}O{sub 3}/GaN interface is comparatively abrupt. Scanning transmission electron microscopy data showed that the 900?°C and 1000?°C MOCVD films exhibit polycrystalline nature, while the ALD films were found to be amorphous.

Mazumder, Baishakhi, E-mail: bmazumder@engineering.ucsb.edu; Wu, Feng; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Liu, Xiang; Yeluri, Ramya; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

2014-10-07T23:59:59.000Z

84

Impact of defects on the electrical transport, optical properties and failure mechanisms of GaN nanowires.  

SciTech Connect (OSTI)

We present the results of a three year LDRD project that focused on understanding the impact of defects on the electrical, optical and thermal properties of GaN-based nanowires (NWs). We describe the development and application of a host of experimental techniques to quantify and understand the physics of defects and thermal transport in GaN NWs. We also present the development of analytical models and computational studies of thermal conductivity in GaN NWs. Finally, we present an atomistic model for GaN NW electrical breakdown supported with experimental evidence. GaN-based nanowires are attractive for applications requiring compact, high-current density devices such as ultraviolet laser arrays. Understanding GaN nanowire failure at high-current density is crucial to developing nanowire (NW) devices. Nanowire device failure is likely more complex than thin film due to the prominence of surface effects and enhanced interaction among point defects. Understanding the impact of surfaces and point defects on nanowire thermal and electrical transport is the first step toward rational control and mitigation of device failure mechanisms. However, investigating defects in GaN NWs is extremely challenging because conventional defect spectroscopy techniques are unsuitable for wide-bandgap nanostructures. To understand NW breakdown, the influence of pre-existing and emergent defects during high current stress on NW properties will be investigated. Acute sensitivity of NW thermal conductivity to point-defect density is expected due to the lack of threading dislocation (TD) gettering sites, and enhanced phonon-surface scattering further inhibits thermal transport. Excess defect creation during Joule heating could further degrade thermal conductivity, producing a viscous cycle culminating in catastrophic breakdown. To investigate these issues, a unique combination of electron microscopy, scanning luminescence and photoconductivity implemented at the nanoscale will be used in concert with sophisticated molecular-dynamics calculations of surface and defect-mediated NW thermal transport. This proposal seeks to elucidate long standing material science questions for GaN while addressing issues critical to realizing reliable GaN NW devices.

Armstrong, Andrew M.; Aubry, Sylvie; Shaner, Eric Arthur; Siegal, Michael P.; Li, Qiming; Jones, Reese E.; Westover, Tyler; Wang, George T.; Zhou, Xiao Wang; Talin, Albert Alec; Bogart, Katherine Huderle Andersen; Harris, C. Thomas; Huang, Jian Yu

2010-09-01T23:59:59.000Z

85

Structural Properties of Eu-Doped GaN Investigated by Raman Spectroscopy  

SciTech Connect (OSTI)

Rare-earth (RE) impurities doped GaN are highly promising candidates for light emitting device applications due to their efficient electroluminescence properties at room temperature. Among those, Eu doped GaN has been identified as an excellent material for the red spectral region due to its strong emission at 620 nm. As a transition internal to the Eu doping atom (4f-4f), light emission originates in a much smaller complex than the more flexibly controllable quantum structures of wells, wires, and dots. This is thought to make the center less susceptible to structural defects and in particular radiation damage in the lattice host. Nevertheless, the lattice host is crucial for providing the excitation in from of free electrons and holes. In this respect, the actual lattice site Eu occupies in the host lattice, i.e. in GaN, is important. A large fraction of Eu atoms are typically inactive which must be attributed to their lattice site and local environment. GaN films implanted with Eu to concentrations of {approx}10{sup 18} cm{sup -3} were subjected to a highly directed beam of 500 keV He{sup +} at a dose of 5 x 10{sup 14} cm{sup -2}. By means of a shadow mask, irradiated and unexposed regions lie very close to each other on the same sample. We used optical and structural analysis to identify the exerted radiation damage. At the full radiation dose, photoluminescence intensity has decayed to {approx}0.01 of its initial value. From the dose dependence of the radiation decay we previously concluded, that this decay is in part due to the destruction of radiative Eu sites [J.W. Tringe, unpublished (2006)]. Along the transition from virgin to irradiated material we analyze the accumulated damage in terms of surface morphology (atomic force microscopy), crystallinity (x-ray diffraction), and phonon dispersion using micro-Raman spectroscopy. In addition to the well-studied E{sub 2}(high) mode, two new vibrational modes at 659 cm{sup -1} and 201 cm{sup -1} were observed in the Eu implanted and annealed sample, prior to He{sup +} irradiation. These modes are either remnants of the implantation damage or related to the Eu impurity. As such they can be indicative of the actual lattice site the Eu atom resides on. After irradiation, broad Raman modes at 300 cm-1 are being observed. This band indicates disorder activated Raman scattering (DARS) due to the radiation damage. An additional narrow mode appears at 672 cm{sup -1}, which can possibly be due to a nitrogen vacancy related vibrational mode. The continuous transition from irradiated to un-irradiated sample allows the direct evolution of radiation damage and its coordinated effects in structural, optical and vibrational properties. By its systematic correlation we anticipate to be able to elucidate the Eu lattice interaction and the processes of radiation damage.

Senawiratne, J; Xia, Y; Detchprohm, T; Tringe, J W; Stevens, C G; Wetzel, C

2006-06-20T23:59:59.000Z

86

Efficient Switches for Solar Power Conversion: Four Quadrant GaN Switch Enabled Three Phase Grid-Tied Microinverters  

SciTech Connect (OSTI)

Solar ADEPT Project: Transphorm is developing power switches for new types of inverters that improve the efficiency and reliability of converting energy from solar panels into useable electricity for the grid. Transistors act as fast switches and control the electrical energy that flows in an electrical circuit. Turning a transistor off opens the circuit and stops the flow of electrical current; turning it on closes the circuit and allows electrical current to flow. In this way a transistor can be used to convert DC from a solar panel into AC for use in a home. Transphorm’s transistors will enable a single semiconductor device to switch electrical currents at high-voltage in both directions—making the inverter more compact and reliable. Transphorm is using Gallium Nitride (GaN) as a semiconductor material in its transistors instead of silicon, which is used in most conventional transistors, because GaN transistors have lower losses at higher voltages and switching frequencies.

None

2012-02-13T23:59:59.000Z

87

Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes  

SciTech Connect (OSTI)

The gain and photoresponse characteristics have been numerically studied for back-illuminated separate absorption and multiplication (SAM) GaN avalanche photodiodes (APDs). The parameters of fundamental models are calibrated by simultaneously comparing the simulated dark and light current characteristics with the experimental results. Effects of environmental temperatures and device dimensions on gain characteristics have been investigated, and a method to achieve the optimum thickness of charge layer is obtained. The dependence of gain characteristics and breakdown voltage on the doping concentration of the charge layer is also studied in detail to get the optimal charge layer. The bias-dependent spectral responsivity and quantum efficiency are then presented to study the photoresponse mechanisms inside SAM GaN APDs. It is found the responsivity peak red-shifts at first due to the Franz-Keldysh effect and then blue-shifts due to the reach-through effect of the absorption layer. Finally, a new SAM GaN/AlGaN heterojunction APD structure is proposed for optimizing SAM GaN APDs.

Wang, Xiaodong; Pan, Ming; Hou, Liwei; Xie, Wei [No. 50 Research Institute of China Electronics Technology Group Corporation, 200331 Shanghai (China); Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn; Xu, Jintong; Li, Xiangyang; Chen, Xiaoshuang, E-mail: xschen@mail.sitp.ac.cn; Lu, Wei [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai (China)

2014-01-07T23:59:59.000Z

88

Spatial distribution and magnetism in poly-Cr-doped GaN from first principles X. Y. Cui,1 J. E. Medvedeva,2 B. Delley,3 A. J. Freeman,4 and C. Stampfl1  

E-Print Network [OSTI]

Spatial distribution and magnetism in poly-Cr-doped GaN from first principles X. Y. Cui,1 J. E the spatial distribution and magnetic coupling of Cr-doped GaN, in which exhaustive structural and magnetic direct evidence that the distribution of the doped magnetic ions is neither homogeneous nor random

Medvedeva, Julia E.

89

Temperature dependence of photoconductivity in Zn-doped GaN  

SciTech Connect (OSTI)

In agreement with predictions from a model that explained an abrupt thermal quenching of the blue luminescence (BL) band in high-resistivity Zn-doped GaN [Reshchikov et al., Phys. Rev. B 84, 075212 (2011) and Phys. Rev. B 85, 245203 (2012)], we observed the stepwise decrease of photoconductivity in this material with increasing temperature. For the sample studied in this work, the decrease in photoconductivity occurred in two steps at characteristic temperatures T{sub 1} and T{sub 2}. The characteristic temperatures increased with increasing excitation intensity, very similar to the photoluminescence (PL) behavior. The steps in photoconductivity at about 100 K and 200 K are attributed to drop in the concentration of free electrons due to the thermal emission of holes from a shallow acceptor and the Zn{sub Ga} acceptor, respectively, to the valence band and their recombination with electrons via nonradiative centers. This finding supports the model suggested previously and helps to explain other examples of tunable photoconductivity reported in literature.

Reshchikov, Michael A. [Department of Physics, Virginia Commonwealth University, Richmond, VA 23284 (United States)

2014-02-21T23:59:59.000Z

90

Polarity determination for MOCVD growth of GaN on Si(111) by convergent beam electron diffraction[Metal Organic Chemical Vapor Deposition  

SciTech Connect (OSTI)

The polarity of laterally epitaxially overgrown (LEO) GaN on Si(111) with an AlN buffer layer grown by MOCVD has been studied by convergent beam electron diffraction (CBED). The LEO GaN was studied by cross-section and plan-view transmission electron microscopy (TEM). The threading dislocation density is less than 10{sup 8} cm{sup {minus}2} and no inversion domains were observed. CBED patterns were obtained at 200 kV for the <1 {bar 1} 00> zone. Simulation was done by many-beam solution with 33 zero-order beams. The comparison of experimental CBED patterns and simulated patterns indicates that the polarity of GaN on Si(111) is Ga face.

Zhao, L.; Marchand, H.; Fini, P.; Denbaars, S.P.; Mishra, U.K.; Speck, J.S.

2000-07-01T23:59:59.000Z

91

Evaluation of growth methods for the heteroepitaxy of non-polar (11-20) GaN on sapphire by MOVPE  

E-Print Network [OSTI]

double grating spectrometer equipped with a Peltier-cooled GaAs photomultiplier tube. The spectra were recorded with signal lock-in processing techniques. As the HeCd laser absorption length is ca. 350 nm for 99% absorption in GaN (ignoring any carrier... double grating spectrometer equipped with a Peltier-cooled GaAs photomultiplier tube. The spectra were recorded with signal lock-in processing techniques. As the HeCd laser absorption length is ca. 350 nm for 99% absorption in GaN (ignoring any carrier...

Oehler, F.; Sutherland, D.; Zhu, T.; Emery, R.; Badcock, T. J.; Kappers, M. J.; Humphreys, C. J.; Dawson, P.; Oliver, R. A.

2014-09-16T23:59:59.000Z

92

Effect of pressure and temperature on electronic structure of GaN in the zinc-blende structure  

SciTech Connect (OSTI)

The effect of the hydrostatic pressure and the temperature on the electronic structure in GaN semiconductor has been calculated using the local empirical pseudopotential method. The variation of the direct and indirect energy gaps with the pressure up to 120 kbar and with the temperature up to 500 K has been done. The calculated fundamental energy gap at different pressures and different temperatures are calculated and compared with the available experimental data which show excellent agreement. The effect of pressure and temperature on the refractive index of the considered materials has also been studied.

Degheidy, A. R., E-mail: ardegheidy@mans.edu.eg; Elkenany, E. B., E-mail: kena@mans.edu.eg [Mansoura University, Department of Physics, Faculty of Science (Egypt)

2011-10-15T23:59:59.000Z

93

GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid chemical vapor deposition  

SciTech Connect (OSTI)

Ordered and dense GaN light emitting nanorods are studied with polycrystalline graphene grown by rapid chemical vapor deposition as suspended transparent electrodes. As the substitute of indium tin oxide, the graphene avoids complex processing to fill up the gaps between nanorods and subsequent surface flattening and offers high conductivity to improve the carrier injection. The as-fabricated devices have 32% improvement in light output power compared to conventional planar GaN-graphene diodes. The suspended graphene remains electrically stable up to 300?°C in air. The graphene can be obtained at low cost and high efficiency, indicating its high potential in future applications.

Xu, Kun; Xu, Chen, E-mail: xuchen58@bjut.edu.cn; Deng, Jun; Zhu, Yanxu; Guo, Weiling; Mao, Mingming; Xun, Meng; Chen, Maoxing; Zheng, Lei [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China)] [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China); Xie, Yiyang [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 (China)] [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 (China); Sun, Jie, E-mail: jie.sun@chalmers.se [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China) [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China); Mikroteknologi och Nanovetenskap, Chalmers Tekniska Högskola AB, Göteborg 41296 (Sweden)

2013-11-25T23:59:59.000Z

94

Top-gate thin-film transistors based on GaN channel layer Rongsheng Chen, Wei Zhou, and Hoi Sing Kwok  

E-Print Network [OSTI]

liquid gallium target. The GaN TFTs exhibit good electrical performance such as field effect mobility of 1 cm2 /Vs, threshold voltage of Ã?0.4 V, on/off current ratio of 105 , and subthreshold swing of 0 electrical sta- bility of ZnO-based TFTs is still a main issue preventing from commercialization.9 Bottom

95

The reaction of carbon tetrachloride with gallium arsenide ,,001... L. Li., S, Gan, B.-K. Han, H. Qi, and R. F. Hicksa)  

E-Print Network [OSTI]

The reaction of carbon tetrachloride with gallium arsenide ,,001... L. Li., S, Gan, B.-K. Han, H, California 90095 Received 26 June 1997; accepted for publication 30 December 1997 Carbon tetrachloride of steps during the vapor-phase epitaxial growth of III­V compound semiconductors.3,4 Carbon tetrachloride

Li, Lian

96

STUDY OF THE RADIATION HARDNESS OF VCSEL AND PIN K.K. GAN, W. FERNANDO, H.P. KAGAN, R.D. KASS, A. LAW,  

E-Print Network [OSTI]

that the main radiation effect is bulk damage in the VCSEL and PIN with the displacement of atoms. After five and VCSEL arrays coupled to radiation-hard ASICs produced for the current pixel optical link [5], the DORIC1 STUDY OF THE RADIATION HARDNESS OF VCSEL AND PIN ARRAYS K.K. GAN, W. FERNANDO, H.P. KAGAN, R

Gan, K. K.

97

Growth of GaN on SiC(0001) by Molecular Beam Epitaxy C. D. LEE (a), ASHUTOSH SAGAR (a), R. M. FEENSTRA  

E-Print Network [OSTI]

]. Silicon carbide has a much better lattice match to GaN (3.4%), and has gained in popularity in recent years as a substrate for both molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy of Ga where a transition between streaky and spotty behavior occurs in the reflection high energy electron

Feenstra, Randall

98

spe438-20 page 1 Garrison, N.J., Busby, C.J., Gans, P.B., Putirka, K., and Wagner, D.L., 2008, A mantle plume beneath California? The mid-Miocene Lovejoy flood basalt, northern  

E-Print Network [OSTI]

-Miocene Lovejoy flood basalt, northern California Noah J. Garrison Cathy J. Busby Phillip B. Gans Department the eastern Snake River Plain toward the Yellowstone caldera (Armstrong et al., 1975; Rodgers et al., 1990

Busby, Cathy

99

Vehicle Technologies Office Merit Review 2014: Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction Drives  

Broader source: Energy.gov [DOE]

Presentation given by APEI Inc. at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about Advanced low-cost SIC and GaN wide...

100

Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures  

SciTech Connect (OSTI)

We demonstrate the use of anomalous x-ray scattering of constituent cations at their absorption edge, in a conventional Bragg-Brentano diffractometer, to measure absolutely and quantitatively the polar orientation and polarity fraction of unipolar and mixed polar wurtzitic crystals. In one set of experiments, the gradual transition between c+ and c? polarity of epitaxial ZnO films on sapphire as a function of MgO buffer layer thickness is monitored quantitatively, while in a second experiment, we map the polarity of a lateral polar homojunction in GaN. The dispersion measurements are compared with piezoforce microscopy images, and we demonstrate how x-ray dispersion and scanning probe methods can provide complementary information that can discriminate between polarity fractions at a material surface and polarity fractions averaged over the film bulk.

Shelton, Christopher T.; Sachet, Edward; Paisley, Elizabeth A.; Hoffmann, Marc P.; Rajan, Joseph; Collazo, Ramón; Sitar, Zlatko; Maria, Jon-Paul [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

2014-01-28T23:59:59.000Z

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions  

SciTech Connect (OSTI)

Acceptor doping of GaN with Mg during plasma-assisted molecular beam epitaxy, under N-rich conditions and a relatively high growth temperature of 740 deg. C, was investigated. The p-doping level steadily increases with increasing Mg flux. The highest doping level achieved, determined from Hall measurements, is 2.1x10{sup 18} cm{sup -3}. The corresponding doping efficiency and hole mobility are approx4.9% and 3.7 cm{sup 2}/V s at room temperature. Cross-sectional transmission electron microscopy and photoluminescence measurements confirm good crystalline and optical quality of the Mg-doped layers. An InGaN/GaN quantum dot light emitting diode (lambda{sub peak}=529 nm) with p-GaN contact layers grown under N-rich condition exhibits a low series resistance of 9.8 OMEGA.

Zhang Meng; Bhattacharya, Pallab; Guo Wei; Banerjee, Animesh [Department of Electrical Engineering and Computer Science, Solid-State Electronics Laboratory, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2010-03-29T23:59:59.000Z

102

Preparation of Ag Schottky contacts on n-type GaN bulk crystals grown in nitrogen rich atmosphere by the hydride vapor phase epitaxy technique  

SciTech Connect (OSTI)

Electrical properties of Schottky contacts on n-type GaN grown in nitrogen rich atmosphere with different N/Ga ratios by hydride vapor phase epitaxy were investigated. We show that tunneling of electrons from the conduction band of GaN to the metal is dominant in our samples. The quality of Schottky contacts does not only depend on surface preparation but also on the growth conditions of the crystals. Schottky contacts on these crystals show an increasing deterioration when higher N/Ga growth ratios are used. We correlate our results with the presence of negatively charged gallium vacancies in the samples. These charges compensate the positively charged donors and lead to a significant increase in series resistance.

Stübner, R., E-mail: ronald.stuebner@physik.tu-dresden.de; Kolkovsky, Vl.; Weber, J. [Technische Universität Dresden, 01062 Dresden (Germany); Leibiger, Gunnar; Habel, Frank [Freiberger Compound Materials GmbH, 09599 Freiberg (Germany)

2014-10-14T23:59:59.000Z

103

Confirmation of intrinsic electron gap states at nonpolar GaN(1-100) surfaces combining photoelectron and surface optical spectroscopy  

SciTech Connect (OSTI)

The electronic structure of GaN(1–100) surfaces is investigated in-situ by photoelectron spectroscopy (PES) and reflection anisotropy spectroscopy (RAS). Occupied surface states 3.1?eV below the Fermi energy are observed by PES, accompanied by surface optical transitions found in RAS around 3.3?eV, i.e., below the bulk band gap. These results indicate that the GaN(1–100) surface band gap is smaller than the bulk one due to the existence of intra-gap states, in agreement with density functional theory calculations. Furthermore, the experiments demonstrate that RAS can be applied for optical surface studies of anisotropic crystals.

Himmerlich, M., E-mail: marcel.himmerlich@tu-ilmenau.de; Eisenhardt, A.; Shokhovets, S.; Krischok, S. [Institut für Physik and Institut für Mikro- und Nanotechnologien, TU Ilmenau, PF 100565, 98684 Ilmenau (Germany); Räthel, J.; Speiser, E.; Neumann, M. D.; Navarro-Quezada, A.; Esser, N. [Leibniz-Institut für Analytische Wissenschaften - ISAS - e.V., Albert-Einstein-Strasse 9, 12489 Berlin (Germany)

2014-04-28T23:59:59.000Z

104

Comparative study of GaN mesa etch characteristics in Cl{sub 2} based inductively coupled plasma with Ar and BCl{sub 3} as additive gases  

SciTech Connect (OSTI)

GaN thin film etching is investigated and compared for mesa formation in inductively coupled plasma (ICP) of Cl{sub 2} with Ar and BCl{sub 3} gas additives using photoresist mask. Etch characteristics are studied as a function of ICP process parameters, viz., ICP power, radio frequency (RF) power, and chamber pressure at fixed total flow rate. The etch rate at each ICP/RF power is 0.1–0.2??m/min higher for Cl{sub 2}/Ar mixture mainly due to higher Cl dissociation efficiency of Ar additive that readily provides Cl ion/radical for reaction in comparison to Cl{sub 2}/BCl{sub 3} mixture. Cl{sub 2}/Ar mixture also leads to better photoresist mask selectivity. The etch-induced roughness is investigated using atomic force microscopy. Cl{sub 2}/Ar etching has resulted in lower root-mean-square roughness of GaN etched surface in comparison to Cl{sub 2}/BCl{sub 3} etching due to increased Ar ion energy and flux with ICP/RF power that enhances the sputter removal of etch product. The GaN surface damage after etching is also evaluated using room temperature photoluminescence and found to be increasing with ICP/RF power for both the etch chemistries with higher degree of damage in Cl{sub 2}/BCl{sub 3} etching under same condition.

Rawal, Dipendra Singh, E-mail: dsrawal15@gmail.com; Arora, Henika; Sehgal, Bhupender Kumar; Muralidharan, Rangarajan [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi-110054 (India)

2014-05-15T23:59:59.000Z

105

Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts  

SciTech Connect (OSTI)

Based on a novel double step oxide buffer heterostructure approach for GaN integration on Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN photodetector system with integrated short-period (oxide/Si) Distributed Bragg Reflector (DBR) and leakage suppressing Metal-Oxide-Semiconductor (MOS) electrode contacts. In terms of structural properties, it is demonstrated by in-situ reflection high energy electron diffraction and transmission electron microscopy-energy dispersive x-ray studies that the DBR heterostructure layers grow with high thickness homogeneity and sharp interface structures sufficient for UV applications; only minor Si diffusion into the Y{sub 2}O{sub 3} films is detected under the applied thermal growth budget. As revealed by comparative high resolution x-ray diffraction studies on GaN/oxide buffer/Si systems with and without DBR systems, the final GaN layer structure quality is not significantly influenced by the growth of the integrated DBR heterostructure. In terms of optoelectronic properties, it is demonstrated that—with respect to the basic GaN/oxide/Si system without DBR—the insertion of (a) the DBR heterostructures and (b) dark current suppressing MOS contacts enhances the photoresponsivity below the GaN band-gap related UV cut-off energy by almost up to two orders of magnitude. Given the in-situ oxide passivation capability of grown GaN surfaces and the one order of magnitude lower number of superlattice layers in case of higher refractive index contrast (oxide/Si) systems with respect to classical III-N DBR superlattices, virtual GaN substrates on Si via functional oxide buffer systems are thus a promising robust approach for future GaN-based UV detector technologies.

Szyszka, A., E-mail: szyszka@ihp-microelectronics.com, E-mail: adam.szyszka@pwr.wroc.pl [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Lupina, L.; Lupina, G.; Schubert, M. A.; Zaumseil, P. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Haeberlen, M.; Storck, P.; Thapa, S. B. [Siltronic, Hanns-Seidel-Platz 4, 81737 München (Germany); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); BTU Cottbus-Senftenberg, Konrad-Zuse-Strasse 1, 03046 Cottbus (Germany)

2014-08-28T23:59:59.000Z

106

Study of the growth mechanisms of GaN/(Al, Ga)N quantum dots: Correlation between structural and optical properties  

SciTech Connect (OSTI)

The ammonia-based molecular beam epitaxy of GaN/(Al, Ga)N quantum dots is investigated using reflection high-energy electron diffraction, atomic force microscopy, transmission electron microscopy and photoluminescence. The main steps of the formation kinetics are identified and the influence of diffusion and evaporation processes on both the quantum dot and the wetting layer morphology is addressed. The correlation between the optical and structural properties of such structures finally allows for the analysis of matter exchanges between the quantum dots and the wetting layer during capping.

Sergent, S. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Universite de Nice Sophia Antipolis, Parc Valrose, F-06102 Nice Cedex 2 (France); Damilano, B.; Huault, T.; Brault, J.; Tottereau, O.; Vennegues, P.; Leroux, M.; Semond, F.; Massies, J. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Korytov, M.

2011-03-01T23:59:59.000Z

107

Heteroepitaxial growth and surface structure of L1{sub 0}-MnGa(111) ultra-thin films on GaN(0001)  

SciTech Connect (OSTI)

L1{sub 0}-structured MnGa(111) ultra-thin films were heteroepitaxially grown on GaN(0001) under lightly Mn-rich conditions using molecular beam epitaxy. Room-temperature scanning tunneling microscopy (STM) investigations reveal smooth terraces and angular step edges, with the surface structure consisting primarily of a 2 × 2 reconstruction along with small patches of 1 × 2. Theoretical calculations were carried out using density functional theory, and the simulated STM images were calculated using the Tersoff-Hamman approximation, revealing that a stoichiometric 1 × 2 and a Mn-rich 2 × 2 surface structure give the best agreement with the observed experimental images.

Mandru, Andrada-Oana; Wang, Kangkang; Cooper, Kevin; Ingram, David C.; Smith, Arthur R. [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States)] [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Garcia Diaz, Reyes; Takeuchi, Noboru [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States) [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autónoma de México, Apartado Postal 14, Ensenada Baja California, Codigo Postal 22800 (Mexico); Haider, Muhammad [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States) [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Department of Physics, King Fahd University of Petroleum and Minerals, Dhahran, 31261 (Saudi Arabia)

2013-10-14T23:59:59.000Z

108

Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk  

SciTech Connect (OSTI)

Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280?nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

2014-11-07T23:59:59.000Z

109

Effects of capping on GaN quantum dots deposited on Al{sub 0.5}Ga{sub 0.5}N by molecular beam epitaxy  

SciTech Connect (OSTI)

The impact of the capping process on the structural and morphological properties of GaN quantum dots (QDs) grown on fully relaxed Al{sub 0.5}Ga{sub 0.5}N templates was studied by transmission electron microscopy. A morphological transition between the surface QDs, which have a pyramidal shape, and the buried ones, which have a truncated pyramid shape, is evidenced. This shape evolution is accompanied by a volume change: buried QDs are bigger than surface ones. Furthermore a phase separation into Al{sub 0.5}Ga{sub 0.5}N barriers was observed in the close vicinity of buried QDs. As a result, the buried QDs were found to be connected with the nearest neighbors by thin Ga-rich zones, whereas Al-rich zones are situated above the QDs.

Korytov, M. [CRHEA-CNRS, rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France) and University of Nice Sophia-Antipolis, Parc Valrose, 06103 Nice (France); Benaissa, M. [CNRST, angle Allal-Fassi/FAR, Madinat al-irfane, 10000 Rabat (Morocco); Brault, J.; Vennegues, P. [CRHEA-CNRS, rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Huault, T. [CRHEA-CNRS, rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France and RIBER S.A., 31 rue Casimir Perier, BP 70083, 95873 Bezons Cedex (France); Neisius, T. [CP2M, Faculte Saint Jerome, 13397 Marseille Cedex 20 (France)

2009-04-06T23:59:59.000Z

110

Dual-polarity GaN micropillars grown by metalorganic vapour phase epitaxy: Cross-correlation between structural and optical properties  

SciTech Connect (OSTI)

Self-assembled catalyst-free GaN micropillars grown on (0001) sapphire substrates by metal organic vapor phase epitaxy are investigated. Transmission electron microscopy, as well as KOH etching, shows the systematic presence of two domains of opposite polarity within each single micropillar. The analysis of the initial growth stages indicates that such double polarity originates at the micropillar/substrate interface, i.e., during the micropillar nucleation, and it propagates along the micropillar. Furthermore, dislocations are also generated at the wire/substrate interface, but bend after several hundreds of nanometers. This leads to micropillars several tens of micrometers in length that are dislocation-free. Spatially resolved cathodoluminescence and microphotoluminescence show large differences in the optical properties of each polarity domain, suggesting unequal impurity/dopant/vacancy incorporation depending on the polarity.

Coulon, P. M. [CRHEA-CNRS, Rue Bernard Grégory, F-06560 Valbonne (France); Université de Nice Sophia-Antipolis (UNS), 28 Ave. Valrose, 06103 Nice (France); Mexis, M.; Teisseire, M.; Vennéguès, P.; Leroux, M.; Zuniga-Perez, J., E-mail: jzp@crhea.cnrs.fr [CRHEA-CNRS, Rue Bernard Grégory, F-06560 Valbonne (France); Jublot, M. [Faculté des Sciences de Saint Jérôme—CP2M, Ave. Escadrille Normandie Niemen, 13397 Marseille (France)

2014-04-21T23:59:59.000Z

111

Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy  

SciTech Connect (OSTI)

Hall effect and capacitance-voltage C(V) measurements were performed on p-type GaN:Mg layers grown on GaN templates by molecular beam epitaxy with a high range of Mg-doping concentrations. The free hole density and the effective dopant concentration N{sub A}-N{sub D} as a function of magnesium incorporation measured by secondary ion mass spectroscopy clearly reveal both a magnesium doping efficiency up to 90% and a strong dependence of the acceptor ionization energy Ea with the acceptor concentration N{sub A}. These experimental observations highlight an isolated acceptor binding energy of 245{+-}25 meV compatible, at high acceptor concentration, with the achievement of p-type GaN:Mg layers with a hole concentration at room temperature close to 10{sup 19} cm{sup -3}.

Brochen, Stephane; Brault, Julien; Chenot, Sebastien; Dussaigne, Amelie; Leroux, Mathieu; Damilano, Benjamin [CNRS-CRHEA, Rue Bernard Gregory, F-06560 Valbonne (France)

2013-07-15T23:59:59.000Z

112

August 2013 Jianbang Gan  

E-Print Network [OSTI]

and Marketing), Iowa State University, 1988 B.S., Forest Engineering, Fujian Agriculture and Forestry University Specialty: Forest Resource Economics, Management, and Policy Current Research Interests: Bioenergy

113

Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates  

SciTech Connect (OSTI)

The vertical bulk (drain-bulk) current (I{sub db}) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I{sub db} (25-300 Degree-Sign C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E{sub a}), the (soft or destructive) vertical breakdown voltage (V{sub B}), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E{sub a} = 0.35 eV at T = 25-300 Degree-Sign C; V{sub B} = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E{sub a} = 2.5 eV at T > 265 Degree-Sign C; V{sub B} > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E{sub a} = 0.35 eV at T > 150 Degree-Sign C; V{sub B} = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

Perez-Tomas, A.; Fontsere, A.; Llobet, J. [IMB-CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, CAT (Spain); Placidi, M. [IREC, Jardins Dones de Negre 1, 08930 Sant Adria de Besos, Barcelona (Spain); Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Baron, N. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); PICOGIGA International, Pl M. Rebuffat, Courtaboeuf 7, 91140 Villejust (France)

2013-05-07T23:59:59.000Z

114

DFW Airport  

E-Print Network [OSTI]

M ay Ju n Ju l A ug S ep O ct N ov D ec D eg re e D ay s CDD HDD 95.4 ?F (35.2 ?C) 34 ?F (1.1 ?C) Annually 2370 HDD 2568 CDD 7 DFW Airport Overview ? Energy Annual Energy Consumption ? Board Managed Accounts ? ~200... and implement uniform space temperature setpoints ? Training (transfer of knowledge) 9 Continuous Commissioning? - Consolidated Rent-A-Car Center ? Opened in 2000 ? 130,000 sq.ft. of conditioned space ? 1.8 million sq.ft. parking garage ? Houses 10...

Dennis, J. R.

2011-01-01T23:59:59.000Z

115

AIRPORT LIGHTING Session Highlights  

E-Print Network [OSTI]

AIRPORT LIGHTING Session Highlights In May 2002, the Airport Technical Assistance Program, also known as AirTAP, sponsored three airport-lighting training sessions at different locations in Minnesota information on airport lighting and navigational aid equipment selection, funding, maintenance, and operation

Minnesota, University of

116

ARM - News from the Gan Island Deployment  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc Documentation RUC : XDCResearchWarmingMethane Background InformationNewsMedia Contact

117

Transportation to Purdue University Indianapolis Airport and...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

to Purdue University Indianapolis Airport and Shuttle Service to Campus The closest major airport to West Lafayette, IN is in Indianapolis (code IND). The Indianapolis Airport is...

118

Congestion delays at hub airports  

E-Print Network [OSTI]

A deterministic model was developed to study the effects of inefficient scheduling on flight delays at hub airports. The model bases the delay calculation on published schedule data and on user-defined airport capacities. ...

St. George, Martin J.

1986-01-01T23:59:59.000Z

119

Airline Passengers' Satisfaction with Airports  

E-Print Network [OSTI]

Airports are places where people have the potential to experience either satisfaction or frustration, and marketing and tourism scholars have argued that customer satisfaction is one of the primary goals of airports. However, few studies have...

Kim, Hyun Joo

2012-02-14T23:59:59.000Z

120

airport market feasibility: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

consider other resources your airport might possess that could generate additional revenue. Airport land is an asset Airport operators control if and how the land on an airport...

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

airport burlingame california: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

consider other resources your airport might possess that could generate additional revenue. Airport land is an asset Airport operators control if and how the land on an airport...

122

Airports and Bicycles: what are the obstacles and incentives for operators 1 to improve bicycle access?  

E-Print Network [OSTI]

Airport f Boston International Airport g Minneapolis-St.Airport f Boston International Airport g Minneapolis-St.56. Boston Logan International Airport. Transportation

Orrick, Phyllis; Frick, Karen Trapenberg

2013-01-01T23:59:59.000Z

123

Modeling upwelling circulation off the Oregon coast Jianping Gan  

E-Print Network [OSTI]

-resolution curvilinear grid is utilized. The response of the coastal ocean to forcing by observed wind stress and heat fields. Over the bank the alongshore coastal jet is displaced offshore, and colder upwelled water extends-rich surface waters near the coast. Along the north central part of the Oregon coast between 45°N and 45.5°N

Gan, Jian-Ping

124

Rapid Communications Strong piezoelectricity in individual GaN nanowires  

E-Print Network [OSTI]

are used as substrates to grow epitaxial optoelectronic devices. This paper models the annealing process, on which one can grow epitax- ial optoelectronic devices with SiGe or other sem- iconductors of a similar

Espinosa, Horacio D.

125

Magnetic characterization of conductance electrons in GaN  

E-Print Network [OSTI]

and Biology, Linko¨ping University, 581 83 Linko¨ping, Sweden Received 5 October 2009, accepted 15 March 2010 donor wave function within effective mass theory (EMT) and a followed up calculation of the hyperfine for intentional doping that allows a variation of the doping concentration. The most powerful tools to investigate

Schmidt, Wolf Gero

126

BAR-ILAN UNIVERSITY (RA) 52900 Ramat-Gan, Israel  

E-Print Network [OSTI]

://www.pbworld.com/pdfs/press_releases/saudilandbridge_web.pdf [5] Shatalova E. & Brautlecht N. (2013). Putin Builds North Korea Rail to Circumvent Suez Canal, http://www.bloomberg.com/news/2013-10-15/putin-builds- north-korea-rail-to-circumvent-suez-canal.html?cmpid=taboola.articles [6

Wiseman, Yair

127

ARM - Field Campaign - AMIE-Gan Ancillary Disdrometer  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLasDelivered‰PNGExperience4AJ01)3, 2010September 30,JuneMayIII ARM Data

128

ARM - Field Campaign - ARM MJO Investigation Experiment on Gan Island  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLasDelivered‰PNGExperience4AJ01)3, 2010September 30,JuneMayIII ARMgovCampaignsARM LBNL

129

Lu Gan | Center for Bio-Inspired Solar Fuel Production  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas Conchas recovery challenge fund Las ConchasTrail of a martian20085816 2.460 2.430Lower

130

Emergence of secondary airports and dynamics of regional airport systems in the United States  

E-Print Network [OSTI]

With the growing demand for air transportation and limited capacity at major airports, there is a need to increase the capacity of airport systems at the metropolitan area level. The increased use of secondary airports has ...

Bonnefoy, Philippe A

2005-01-01T23:59:59.000Z

131

Emergence of Secondary Airports and Dynamics of Regional Airport Systems in the United States  

E-Print Network [OSTI]

With the growing demand for air transportation and limited capacity at major airports, there is a need to increase the capacity of airport systems at the metropolitan area level. The increased use of secondary airports has ...

Bonnefoy, Philippe A

2006-11-21T23:59:59.000Z

132

2001: An Airspace Odyssey SUMMARY PROCEEDINGS OF THE 2001 AIRPORT NOISE SYMPOSIUM AND AIRPORT AIR QUALITY SYMPOSIUM  

E-Print Network [OSTI]

at both Boston Logan International Airport and Los AngelesRunway 27 at Boston Logan International Airport. The FAAexpansion of Boston Logan International Airport. The third

Gosling, Geoffrey D.

2001-01-01T23:59:59.000Z

133

Implementing Solar Technologies at Airports  

SciTech Connect (OSTI)

Federal agencies, such as the Department of Defense and Department of Homeland Security, as well as numerous private entities are actively pursuing the installation of solar technologies to help reduce fossil fuel energy use and associated emissions, meet sustainability goals, and create more robust or reliable operations. One potential approach identified for siting solar technologies is the installation of solar energy technologies at airports and airfields, which present a significant opportunity for hosting solar technologies due to large amounts of open land. This report focuses largely on the Federal Aviation Administration's (FAA's) policies toward siting solar technologies at airports.

Kandt, A.; Romero, R.

2014-07-01T23:59:59.000Z

134

E-Print Network 3.0 - airport land reclamation Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AirportAirport Suvarnabhumi Airport... ,Suvarnabhumi Airport, Bangkok, ThailandBangkok, Thailand 12;OverviewOverview Magnitudes and Financing... -- Land purchased inLand...

135

ST. LOUIS AIRPORT/ HAZELWOOD INTERIM  

E-Print Network [OSTI]

International Airport County: St. Louis County Other Names: Hazelwood Interim Storage & Vicinity, Latty Avenue radioactively-contaminated sites are part of the Formerly Utilized Sites Remedial Action Program (FUSRAP the Formerly Utilized Site Remedial Action Program (FUSRAP). Site information and updates #12;can be found

136

Dynamic Control of Airport Departures: Algorithm Development and Field Evaluation  

E-Print Network [OSTI]

testing of this control protocol at Boston Logan International Airport. I. INTRODUCTION Airport surfaceDynamic Control of Airport Departures: Algorithm Development and Field Evaluation Ioannis Simaiakis burn at major airports. In this paper, we formulate the airport surface congestion management problem

Gummadi, Ramakrishna

137

Demonstration of Reduced Airport Congestion Through Pushback Rate Control  

E-Print Network [OSTI]

Airport surface congestion results in significant increases in taxi times, fuel burn and emissions at major airports. This paper presents the field tests of a control strategy to airport congestion control at Boston Logan ...

Simaiakis, Ioannis

2011-02-02T23:59:59.000Z

138

Improving public transportation to Boston Logan International Airport  

E-Print Network [OSTI]

Boston Logan International Airport is the largest airport in New England and the 1 9 th busiest airport in the United States, serving 29.3 million passengers (arrivals and departures) in 2012. There are approximately 36,900 ...

Cao, Siyuan, M. Eng. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

139

airport pricing strategies: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

provide you with useful new information on project funding Minnesota, University of 88 TUCSON AIRPORT HOTELS 1. Hyatt Place Tucson Airport Engineering Websites Summary: Ph:...

140

AIRPORT SNOW AND ICE CONTROL Session Highlights  

E-Print Network [OSTI]

about the program, please contact: Jim Grothaus, Technology Transfer Engineer Air responsible for all of the equipment used to maintain the airfields at MSP International Airport, and shared-St. Paul International Airport (MSP) requires runways to be cleared within 30 minutes of closing. After

Minnesota, University of

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Siting Solar Photovoltaics at Airports: Preprint  

SciTech Connect (OSTI)

Airports present a significant opportunity for hosting solar technologies due to their open land; based on a 2010 Federal Aviation Administration study, the US Department of Agriculture, and the US Fish and Wildlife Service, there's potential for 116,704 MW of solar photovoltaics (PV) on idle lands at US airports. PV has a low profile and likely low to no impact on flight operations. This paper outlines guidance for implementing solar technologies at airports and airfields, focusing largely on the Federal Aviation Administration's policies. The paper also details best practices for siting solar at airports, provides information on the Solar Glare Hazard Analysis Tool, and highlights a case study example where solar has been installed at an airport.

Kandt, A.; Romero, R.

2014-06-01T23:59:59.000Z

142

Metrics to Characterize Airport Operational Performance Using Surface Surveillance Data  

E-Print Network [OSTI]

Tower BOS Boston General Edward Lawrence Logan International Airport EDCT Expected Departure Clearance International Airport, and are therefore evaluated and discussed using this airport as an example. These metricsMetrics to Characterize Airport Operational Performance Using Surface Surveillance Data Harshad

Gummadi, Ramakrishna

143

DEMONSTRATION OF REDUCED AIRPORT CONGESTION THROUGH PUSHBACK RATE CONTROL  

E-Print Network [OSTI]

strategy to airport congestion control at Boston Logan International Airport. The approach determines Demonstration at Boston Logan International Airport (BOS) was to show that a significant portion and Astronautics Massachusetts Institute of Technology Cambridge, MA, USA B. Reilly Boston Airport Traffic Control

144

Analysis and Modeling of Ground Operations at Hub Airports  

E-Print Network [OSTI]

constraint in the departure process at busy airports like Boston Logan International airport. For example1 Analysis and Modeling of Ground Operations at Hub Airports Kari Andersson1 , Francis Carr2 , Eric Feron3 and William D. Hall4 Abstract: Building simple and accurate models of hub airports can

Feron, Eric

145

Network Congestion Control of Airport Surface Operations Harshad Khadilkar  

E-Print Network [OSTI]

parameters for Boston Logan International Airport are es- timated using empirical data from a surface with simulations of traffic on a network model of Boston Logan International Airport. Nomenclature ASDE-X Airport Surface Detection Equipment, Model X BOS Boston Logan International Airport C Cost function for control

Gummadi, Ramakrishna

146

Multi-modal Transportation > Highway Transportation > Trucking > Railroad transportation > Public transit > Rural transportation > Rural transit > Freight pipeline transportation > Airport planning and development > Airport maintenance > Bicycle and pedes  

E-Print Network [OSTI]

and development > Airport maintenance > Bicycle and pedestrian > Ports and waterways >>> Transportation operat and development > Airport maintenance > Bicycle and pedestrian > Ports and waterways >>> Transportation operations pipeline transportation > Airport planning and development > Airport maintenance > Bicycle and pedestrian

147

E-Print Network 3.0 - airport ceo faces Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ceo faces Page: << < 1 2 3 4 5 > >> 1 Creating smarter airports An opportunity to transform travel and trade Summary: airports Executive summary Airports face multiple...

148

Value of Options in Airport Expansion - Example of AICM  

E-Print Network [OSTI]

Investments decisions for airport capacity expansion are usually taken, either when demand exceeds the current capacity and the airport is working under congestion, or when current demand is expected to overcome current ...

Morgado, Frederico

149

Microsoft PowerPoint - Morgantown Muncipal Airport to NETL Morgantown...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Morgantown Site from Morgantown Municipal Airport 1. Exit the airport by TURNING RIGHT onto HARTMAN RUN RD. and proceed to first light (US-119). 2. Turn LEFT onto US-119 SOUTH and...

150

Market-based airport demand management : theory, model and applications  

E-Print Network [OSTI]

The ever-increasing demand for access to the world's major commercial airports combined with capacity constraints at many of these airports have led to increasing air traffic congestion. In particular, the scarcity of ...

Fan, Terence P

2004-01-01T23:59:59.000Z

151

Of airports and architecture : exercises in public form  

E-Print Network [OSTI]

Airports as an architectural and urban typology typically lack physical and spatial integration with their urban context. Contrary to the city, airports have evolved into semi-autonomous spaces and products of political ...

Fouad, Daniel James

2006-01-01T23:59:59.000Z

152

Guidelines to improve airport preparedness against chemical and biological terrorism.  

SciTech Connect (OSTI)

Guidelines to Improve Airport Preparedness Against Chemical and Biological Terrorism is a 100-page document that makes concrete recommendations on improving security and assessing vulnerable areas and helps its readers understand the nature of chemical and biological attacks. The report has been turned over to Airports Council International (ACI) and the American Association of Airport Executives (AAAE), two organizations that together represent the interests of thousands of airport personnel and facilities in the U.S. and around the world.

Edwards, Donna M.; Price, Phillip N. (Lawrence Berkeley National Laboratory, Berkeley, CA); Gordon, Susanna P.; Gadgil, Ashok (Lawrence Berkeley National Laboratory, Berkeley, CA)

2005-05-01T23:59:59.000Z

153

Energy Management Practices at Dalls/Fort Worth International Airport  

E-Print Network [OSTI]

Energy Management Practices at Dallas/Fort Worth International Airport Jerry R. Dennis, CEM, CEP Energy Manager October 9, 2013 Energy Management Practices at DFW Airport, October 9, 2013 Presentation Outline ? DFW Airport Overview ? Energy... Management Section ? Structure & Mission ? Supply-Side Management ? Reliability ? Cost (Risk) mitigation ? Environmental stewardship ? Demand-Side Management ? Energy monitoring ? Energy audits ? Energy standards ? Continuous Commissioning...

Dennis, J. R.

2013-01-01T23:59:59.000Z

154

MANAGEMENT OF MULTI-AIRPORT SYSTEMS: A DEVELOPMENT STRATEGY  

E-Print Network [OSTI]

, Berlin, Boston, Minneapolis/St.Paul, St.Louis, and Seattle. Yet the experience in managing multi-airport: * Edmonton: The International airport has been emptied as passengers flock to the more convenient downtown deserted (BAA, 1992); * Montreal: Montreal/Mirabel, the International airport, receives about less than 3

Entekhabi, Dara

155

Queuing Models of Airport Departure Processes for Emissions Reduction  

E-Print Network [OSTI]

is validated through a comparison of its predictions with observed data at Boston's Logan International AirportQueuing Models of Airport Departure Processes for Emissions Reduction Ioannis Simaiakis burn and emissions at airports. This paper investigates the possibility of reducing fuel burn

Gummadi, Ramakrishna

156

A Network Congestion Control Approach to Airport Departure Management  

E-Print Network [OSTI]

for a generic airport and then validate it using surface surveillance data from Boston Logan InternationalA Network Congestion Control Approach to Airport Departure Management Harshad Khadilkar and Hamsa at airports, by posing the problem in a network congestion control framework. We develop a network model

Gummadi, Ramakrishna

157

Demonstration of Reduced Airport Congestion through Pushback Rate Control  

E-Print Network [OSTI]

of a congestion control strategy at Boston Logan International Airport. The approach determines a suggested rate Control Demonstration at Boston Logan International Airport (BOS) was to show that a significant portionDemonstration of Reduced Airport Congestion through Pushback Rate Control Ioannis Simaiakis

Gummadi, Ramakrishna

158

Building Airport Systems for the Next Generation Dealing with the uncertainties of airport development will require new strategies.  

E-Print Network [OSTI]

at Atlanta, Boston, Dallas/Fort Worth, Las Vegas, Miami International, New York/Kennedy, Orlando International, Philadelphia, Washington/Dulles, and elsewhere. Brand-new or thoroughly reworked airportsBuilding Airport Systems for the Next Generation Dealing with the uncertainties of airport

159

E-Print Network 3.0 - amsterdam airport schiphol Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

these two airports: Schiphol Airport (Amsterdam) 40 minutes by taxi or 1 hour... by train (see by Train). Rotterdam Airport 10 minutes by taxi or more than an hour by bus....

160

Moriarty Municipal Airport (0E0) Pavement Condition and Analysis  

E-Print Network [OSTI]

Airport Development Administrator New Mexico Aviation Division P.O. Box 9830 Albuquerque, NM 87119 tel Effect of Coal Tar Seal on PCI 13 .......................................4. Predicted Pavement Conditions

Cal, Mark P.

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

airport extension project: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

unable to attend, we hope it will provide you with useful new information on project funding Minnesota, University of 2 Key Findings of 2013 ATRS Global Airport Performance...

162

airport facilities: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: radioactively-contaminated sites are part of the Formerly Utilized Sites Remedial Action Program (FUSRAP the Airport resulted in the contamination of numerous...

163

airport disaster medical: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: radioactively-contaminated sites are part of the Formerly Utilized Sites Remedial Action Program (FUSRAP the Airport resulted in the contamination of numerous...

164

airport entry scrreening: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: radioactively-contaminated sites are part of the Formerly Utilized Sites Remedial Action Program (FUSRAP the Airport resulted in the contamination of numerous...

165

airport terminals: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: radioactively-contaminated sites are part of the Formerly Utilized Sites Remedial Action Program (FUSRAP the Airport resulted in the contamination of numerous...

166

airport nye county: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: radioactively-contaminated sites are part of the Formerly Utilized Sites Remedial Action Program (FUSRAP the Airport resulted in the contamination of numerous...

167

airport access: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: radioactively-contaminated sites are part of the Formerly Utilized Sites Remedial Action Program (FUSRAP the Airport resulted in the contamination of numerous...

168

E-Print Network 3.0 - airport capacity Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

; Energy Storage, Conversion and Utilization 2 AIRPORT TROUGHPUT CAPACITY LIMITS FOR DEMAND MANAGEMENT Vivek Kumar, Lance Sherry Summary: AIRPORT TROUGHPUT CAPACITY LIMITS FOR...

169

E-Print Network 3.0 - airports Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Airport Systems Planning, Design, and Management Collection: Engineering ; Energy Storage, Conversion and Utilization 3 Paper Number: 109 Abstract--Airports are of...

170

E-Print Network 3.0 - airport ground support Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

PROVIDER AND ADVOCATE Airports are... . Airports for the most part are self-sustaining ... Source: George Mason University, Center for Air Transportation Systems...

171

E-Print Network 3.0 - airport control towers Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

3 Airport Tower Automation With the construction of Bergstrom International Airport in South Austin, the FAA has Summary: . The tower communicates with the airplanes via...

172

E-Print Network 3.0 - airport ticket counters Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Technologies and Information Sciences 13 Transportation from Miami International Airport to FAU Boca Raton Campus The Miami International Airport is 50 miles from Florida...

173

E-Print Network 3.0 - airport runways Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

6 Airport Tower Automation With the construction of Bergstrom International Airport in South Austin, the FAA has Summary: " and it will automatically allocate the...

174

E-Print Network 3.0 - atlanta international airport Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

international airport Search Powered by Explorit Topic List Advanced Search Sample search results for: atlanta international airport Page: << < 1 2 3 4 5 > >> 1 PLANNING...

175

E-Print Network 3.0 - adds vancouver airport Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Engineering, Airport Systems Planning, Design, and Management Collection: Engineering ; Energy Storage, Conversion and Utilization 13 de Neufville Low Cost Airports 3142007...

176

GaN Nanowire Arrays for High-Output Nanogenerators Chi-Te Huang,,  

E-Print Network [OSTI]

. Introduction Energy is the fundamental deciding factor for the sustainable development of human civilization.1 Although our current energy relies on fossil fuels, searching for nanoenabled sustain- able green energy are promising building blocks for future applications of nanodevices with excellent performance, such as laser

Wang, Zhong L.

177

Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for Under...  

Broader source: Energy.gov (indexed) [DOE]

single phase * Finalizing control system design - Space vector PWM + sensored FOC, MATLABSimulink simulation, sensor signal conditioning, digital control platform, CAN...

178

Wavelength limits for InGaN quantum wells on GaN  

SciTech Connect (OSTI)

The emission wavelength of coherently strained InGaN quantum wells (QW) is limited by the maximum thickness before relaxation starts. For high indium contents x>40% the resulting wavelength decreases because quantum confinement dominates. For low indium content x<40% the electron hole wave function overlap (and hence radiative emission) is strongly reduced with increasing QW thickness due to the quantum confined Stark effect and imposes another limit. This results in a maximum usable emission wavelength at around 600?nm for QWs with 40%-50% indium content. Relaxed InGaN buffer layers could help to push this further, especially on non- and semi-polar orientations.

Pristovsek, Markus, E-mail: markus@pristovsek.de [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)] [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)

2013-06-17T23:59:59.000Z

179

TEM studies of laterally overgrown GaN layers grown on non-polar substrates  

E-Print Network [OSTI]

73, 1691 (1998). 11. H. Marchand, J.P. Ibbetson, P.T. Fini,1999). 17. P. Fini, H. Marchand, J.P. Ibbetson, B. Moran, L.

Liliental-Weber, Z.; Ni, X.; Morkoc, H.

2006-01-01T23:59:59.000Z

180

GaN quantum dot superlattices grown by molecular beam epitaxy at high temperature  

E-Print Network [OSTI]

P-based optoelectronic devices with Si microelectronic devices. This method uses a Au-Ge eutectic alloy as the bonding. The realization of integrafion of GaAs- and InP-based optoelectronic devices with Si microelectronic components

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Electric field engineering in GaN high electron mobility transistors  

E-Print Network [OSTI]

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

182

Dynamic ON-resistance in high voltage GaN field-effect-transistors  

E-Print Network [OSTI]

Recently, the development of energy efficient electrical power management systems has received considerable interest due to its potential to realize significant energy savings for the world. With current Si-based power ...

Jin, Donghyun

2014-01-01T23:59:59.000Z

183

Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular  

E-Print Network [OSTI]

-free environment at atmospheric pressure. TMG was kept cool in a -10 °C temperature bath. Nitrogen, used a total nitrogen flow rate of 250 sccm. These were supplied via a 4-mm i.d. quartz tube. Hydrogen and ammonia sources were supplied via a 22-mm i.d. outer quartz tube at a total flow rate of 155 sccm

Yang, Peidong

184

Development of an Infrastructure for the Growth and Characterization of GaN on Nitrided Sapphire  

E-Print Network [OSTI]

and prospered. To Dr. C. Stinespring and his lab members I would like to thank for the use of the facilities and specifically Jeff Gold for the mass spectrometer measurements. I would also like to thank Dr. C. Stinespring

Myers, Tom

185

MICH]GAN TECHNOLOGICALUNIVERSITY OMB CIRCULAR A-].33 SUPPI,EMENTARYFINAI{CIAI, REPORT  

E-Print Network [OSTI]

AUDITORS ' REPORITSON COMPIJIA}ICE - The University as an EntiLY - Federal Financial Assistance Programs THE UNIVERSITY AS AN ENTITY To the Board of Control-, Michigan Technological University: We have audited the basic financial statements of MICHIGAN TECHNOLOGICALUNIVERSITY (the .University

186

K.K. Gan ATLAS Pixel Week 1 New Results on Opto-electronics  

E-Print Network [OSTI]

boards) 15 m fibers/wires Bi-phase marked optical signal Decoded data (3 optical + 1 electrical) data Improvement in DORIC-I2/DORIC-D3 q Result on New Opto-Board q Result on Opto-Board Irradiation q Plans #12;K ATLAS Pixel Week 13 New Opto-board Tester Bit error test board fibers Bi-phase marked signal Decoded

Gan, K. K.

187

K.K. Gan US ATLAS Upgrade Workshop 1 Tracker Optical Link Upgrade  

E-Print Network [OSTI]

Optical Modules SCT harness: speed: 40 Mb/s single fiber (fragile) short flex to reduce? What is the PIN SEU rate? What is the VCSEL optical power after irradiation? Can the VCSEL recover > 70% of optical power 2 arrays irradiated to 1016 1-MeV neq/cm2 some channels lost all optical

Gan, K. K.

188

Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers  

E-Print Network [OSTI]

by metalorganic vapor phase ep- itaxy MOVPE in an AIX 200 rf reactor. The layers were thermally annealed in N2 performed with either a HeCd Laser or, for higher excitation densities, using the third harmonic at 355 nm of an actively mode-locked Nd:YAG laser giving pulses of 80 ps duration with 76 MHz repetition rate. The samples

Nabben, Reinhard

189

E-Print Network 3.0 - a-plane gan films Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

films Page: << < 1 2 3 4 5 > >> 1 Demonstration of nonpolar a-plane InGaNGaN light emitting diode on r-plane sapphire substrate Summary: of the difficulty in obtaining high...

190

Hall photovoltage deep-level spectroscopy of GaN films I. Shalish*  

E-Print Network [OSTI]

in semiconductor Hall voltage is proposed as a method to charac- terize deep levels. An analytical expression nucleation layer at temperatures lower than the typical growth temperature providing a bridge over

Shalish, Ilan

191

SELF-POWERED CONFORMABLE DEFORMATION SENSOR EXPLOITING THE COLLECTIVE PIEZOELECTRIC EFFECT OF SELF-ORGANIZED GAN  

E-Print Network [OSTI]

, design, fabricate and characterize a thin, conformable low-cost impact detection sensor based additivity of their nanoscale intrinsic properties, which enables to appeal to classical fabrication research effort is put towards the integration of new electronic functionalities in everyday-life objects

Paris-Sud XI, Université de

192

Porous GaN nanowires synthesized using thermal chemical vapor deposition  

E-Print Network [OSTI]

Seo a , Jeunghee Park a,*, Hyunik Yang b , Bongsoo Kim c a Department of Chemistry, Korea University-791, Republic of Korea c Department of Chemistry, Korea Advanced Institute of Science and Technology, Daejeon nanotube-confined reaction [4], arc discharge [5], laser ablation [6], sublimation [7], pyrolysis [8

Kim, Bongsoo

193

Photoelectrochemical undercut etching for fabrication of GaN microelectromechanical systems  

E-Print Network [OSTI]

-scale structures for microelectromechanical systems (MEMS), and the fracture properties of mineralized tissue for microelectromechanical systems (MEMS), specifically involving the high-cycle fatigue of micron-scale thin films

MacDonald, Noel C.

194

On-wafer seamless integration of GaN and Si (100) electronics  

E-Print Network [OSTI]

The high thermal stability of nitride semiconductors allows for the on-wafer integration of (001)Si CMOS electronics and electronic devices based on these semiconductors. This paper describes the technology developed at ...

Chung, Jinwook

195

Analysis of Protein Sequence/Structure Similarity Relationships Hin Hark Gan,*  

E-Print Network [OSTI]

Institute of Mathematical Sciences, The Howard Hughes Medical Institute, § Department of Biology, ¶ New York University Medical School, and Department of Physics, New York University, New York, New York/dissimilarity relationships and provide novel energetic analyses of these relationships. To aid our analysis, we divide

Schlick, Tamar

196

Deeply-scaled GaN high electron mobility transistors for RF applications  

E-Print Network [OSTI]

Due to the unique combination of large critical breakdown field and high electron velocity, GaN-based high electron mobility transistors (HEMTs) have great potential for next generation high power RF amplifiers. The ...

Lee, Dong Seup

2014-01-01T23:59:59.000Z

197

Damage and Microstructure Evolution in GaN under Au Ion Irradiation. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed Newcatalyst phases onOrganizationElectronic2005-2007 BudgetFlightEvolution

198

Thermal evolution of microstructure in ion-irradiated GaN. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism in Layered NbS2 andThe1 MembersStability of MnBiTiO2(110) . |

199

Ion-beam-induced chemical disorder in GaN. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFunInfrared LandResponses toInvestigatingAdaptedInvestor|HeavyIon-beam-induced

200

Amorphization Processes in Au Ion Irradiated GaN at 150 - 300 K. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series to someone by E-mail ShareRed Cross Blood Driveover a broad

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
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201

Atomic-Level Study of Melting Behavior of GaN Nanotubes. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series to someone byDear Friend,Arthur J.Amorphous-to-Crystalline

202

Airports - Local Information - Radiation Effects Facility / Cyclotron  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth (AOD)ProductssondeadjustsondeadjustAbout the BuildingInnovationAirport Viz - A 3D Tool to Enhance

203

Modeling airline frequency competition for airport congestion Vikrant Vaze  

E-Print Network [OSTI]

responsible for the growing demand for airport resources. We propose a game-theoretic model for airline Barnhart Department of Civil and Environmental Engineering, Massachusetts Institute of Technology Abstract: Demand often exceeds capacity at the congested airports. Airline frequency competition is partially

Entekhabi, Dara

204

Bradley International Airport "The Gateway to New England"  

E-Print Network [OSTI]

Boston's Logan International Airport is busiest · Runway length: 9,502 feet · Air National Guard stillBradley International Airport "The Gateway to New England" Lauren Caprario John Cucchiara Laura) · Capital Cargo International Airlines o Travels to Rochester (NY) o Seasonal destinations: Boston

Nagurney, Anna

205

A Decision Support Tool for the Pushback Rate Control of Airport Departures  

E-Print Network [OSTI]

-testing of these types of strategies at Boston Logan International Airport, focusing on the communication). Boston Logan International Airport (BOS) is a major airport in the United States, and serves1 A Decision Support Tool for the Pushback Rate Control of Airport Departures Melanie Sandberg

Gummadi, Ramakrishna

206

Decentralized aircraft landing scheduling at single runway non-controlled airports  

E-Print Network [OSTI]

to enhance the transportation capabilities of the small airports in the U.S.A., and distribute the high volume of air traffic at the hub airports to those small airports, which are mostly non-controlled airports. Currently, two major focus areas of research...

Ding, Yuanyuan

2009-05-15T23:59:59.000Z

207

Multi-modal Transportation > Highway Transportation > Trucking > Railroad transportation > Public transit > Rural transportation > Rural transit > Freig pipeline transportation > Airport planning and development > Airport maintenance > Bicycle and pedestr  

E-Print Network [OSTI]

Multi-modal Transportation > Highway Transportation > Trucking > Railroad transportation > Public transit > Rural transportation > Rural transit > Freig pipeline transportation > Airport planning and development > Airport maintenance > Bicycle and pedestrian > Ports and waterways >>> Transportation ope

208

Federal Aviation Administration's Airport Capital Improvement Program Development Process  

E-Print Network [OSTI]

The Airport Capital Improvement Program (ACIP) serves as the primary tool for project planning and formulation by the Federal Aviation Administration (FAA). The FAA relies on the ACIP to serve as the basis for the distribution of Aviation Trust...

Tener, Scott D.

2009-12-18T23:59:59.000Z

209

Hydrogen Production and Dispensing Facility Opens at W. Va. Airport  

Broader source: Energy.gov [DOE]

A hydrogen production and dispensing station constructed and operated with support from the Office of Fossil Energy's National Energy Technology Laboratory was officially opened Monday at the Yeager Airport in Charleston, W.Va.

210

New MagViz Airport Liquid Analysis System Undergoes Testing  

ScienceCinema (OSTI)

LOS ALAMOS, New Mexico, December 16, 2008?An innovative application of a technology first used for medical imaging may enhance airport security if Los Alamos National Laboratory scientists are successful. Los Alamos technologists have adapted Magnetic Res

None

2010-01-08T23:59:59.000Z

211

Comparing capacities and delays at major European and American airports  

E-Print Network [OSTI]

Successful air transport systems must satisfy the demand for flights while maintaining a high level of service and safety. For airports, which have limited capacities, policy-makers must compromise between maximizing the ...

Morisset, Thomas (Thomas Marc)

2010-01-01T23:59:59.000Z

212

Mitigating airport congestion : market mechanisms and airline response models  

E-Print Network [OSTI]

Efficient allocation of scarce resources in networks is an important problem worldwide. In this thesis, we focus on resource allocation problems in a network of congested airports. The increasing demand for access to the ...

Harsha, Pavithra

2009-01-01T23:59:59.000Z

213

Roswell International Air Center Airport (ROW) Pavement Condition and Analysis  

E-Print Network [OSTI]

Roswell International Air Center Airport (ROW) Pavement Condition and Analysis Submitted to: Jane M ................................................1. Conditions at Roswell International Air Center (ROW) 4 .................................Figure 1. Geographic Location of Roswell International Air Center (ROW) 4 ..............................Table 1

Cal, Mark P.

214

Some measures of aircraft performance on the airport surface  

E-Print Network [OSTI]

During the month of January, a survey was conducted at Boston and Atlanta Airports to obtain input data for an interactive computer simulation of runway and taxiway traffic being developed by Lincoln Laboratory. Data was ...

Swedish, William J.

1972-01-01T23:59:59.000Z

215

Robust Decision-Support Tools for Airport Surface Traffic  

E-Print Network [OSTI]

Forecasts of departure demand are one of the driving inputs to tactical decision-support tools (DSTs) for airport surface traffic. While there are well-known results on average- or worst-case forecast uncertainty, it is ...

Carr, Francis R.

216

Robust decision-support tools for airport surface traffic  

E-Print Network [OSTI]

Forecasts of departure demand are one of the driving inputs to tactical decision-support tools (DSTs) for airport surface traffic. While there are well-known results on average- or worst-case forecast uncertainty, it is ...

Carr, Francis R. (Francis Russell), 1976-

2004-01-01T23:59:59.000Z

217

Continuous Commissioning® of the Dallas/Fort Worth International Airport  

E-Print Network [OSTI]

and cost savings. The Energy Systems Laboratory was hired to apply the Continuous Commissioning ? (CC ? ) 1 process at the airport. Five projects have been identified to date including: 1. An energy audit and assessment of Terminal B and a lighting... on the completed projects: the Consolidated Rent-A-Car Center, the Airport Administration Building, and the major on-going projects, CC of Terminal D and Energy Plaza. 1 Both Continuous Commissioning and CC...

Yazdani, B.; Schroeder, F.; Kramer, L.; Baltazar, J. C.; Turner, W. D.; Wei, G.; Deng, S.; Henson, R.; Dennis, J. R.; T., R.

218

Experience an Ivy League institution on Exchange for a semester or a year!  

E-Print Network [OSTI]

Tuh-GAN-ick), is three stories taller than Niagara Falls Along with the falls, gorges and beautiful lakefront Transportation Ithaca Airport: Direct flights to Detroit, Philadelphia and NYC Good public bus system (TCAT Engineering Hotel Administration Human Ecology Industrial & Labor Relations Second largest college

Keinan, Alon

219

Modeling Changes in Connectivity at U.S. Airports: A Small Community Perspective  

E-Print Network [OSTI]

There currently exists no industry-standard model for measuring an airport's level of connectivity to the global air transportation network. This discussion paper introduces the Airport Connectivity Quality Index (ACQI)--a ...

Wittman, Michael D.

2013-06-11T23:59:59.000Z

220

A queuing model of airport congestion and policy implications at JFK and EWR  

E-Print Network [OSTI]

Since the phasing-out of the High Density Rule, access to major commercial airports in the United States has been unconstrained or, in the case of the airports of New York, weakly constrained. This largely unregulated ...

Jacquillat, Alexandre

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

E-Print Network 3.0 - airport safety area Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

safety area Search Powered by Explorit Topic List Advanced Search Sample search results for: airport safety area Page: << < 1 2 3 4 5 > >> 1 Paper Number: 109 Abstract--Airports...

222

Analysis of Airport Performance using Surface Surveillance Data: A Case Study of BOS  

E-Print Network [OSTI]

Detailed surface surveillance datasets from sources such as the Airport Surface Detection Equipment, Model-X (ASDE-X) have the potential to be used for analysis of airport operations, in addition to their primary purpose ...

Balakrishnan, Hamsa

223

Decision Support Tool for Predicting Aircraft Arrival Rates, Ground Delay Programs, and Airport  

E-Print Network [OSTI]

associated with construction, it is unlikely that any new airports will be built in the near future went on to predict that the these airports will be at 89% capacity by 2012 [2]. The congestion problem

224

A Study on the Effects of Unwanted Air Infiltration on Thermal Comfort at an Airport Terminal  

E-Print Network [OSTI]

The Energy Systems Laboratory at Texas A&M University is currently studying ways to make improvements in thermal comfort at the Terminal E building at DFW airport. Airport terminal building HVAC systems are generally known to consume large amounts...

Lander, B.; Wei, G.; Claridge, D.; Caeiro, J.

225

E-Print Network 3.0 - airport sustainable growth Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ROLE OF AN "AIRPORT OPERATOR" IN TODAY'S Summary: . Airports for the most part are self-sustaining enterprises which do not rely on local taxes for support... Prepared by: Jim...

226

Estimation and tactical allocation of airport capacity in the presence of uncertainty  

E-Print Network [OSTI]

Major airports in the United States and around the world have seen an increase in congestion-related delays over the past few years. Because airport congestion is caused by an imbalance between available capacity and demand, ...

Ramanujam, Varun

2012-01-01T23:59:59.000Z

227

Airports and Bicycles: what are the obstacles and incentives for operators 1 to improve bicycle access?  

E-Print Network [OSTI]

leading to the airport. The MBTA is testing a policy thatTransportation Authority (MBTA) T trains, buses and ferry.

Orrick, Phyllis; Frick, Karen Trapenberg

2013-01-01T23:59:59.000Z

228

Analysis of Airport Performance using Surface Surveillance Data: A Case Study of BOS  

E-Print Network [OSTI]

operational performance of an airport, and present them for the specific case of Boston Logan International. For this study, we used ASDE-X data from Boston Logan International Airport (BOS), dra of Technology, Cambridge, MA 02139. hamsa@mit.edu. AIAA Member. Operations Manager, Boston Airport Traffic

Gummadi, Ramakrishna

229

Optimal Control of Airport Operations with Gate Capacity Constraints Harshad Khadilkar and Hamsa Balakrishnan  

E-Print Network [OSTI]

at Boston's Logan International Airport in the US are used to illustrate the advantages of the proposed for Boston Logan International Airport (BOS) is shown in Fig. 1. Gates at each of the four main terminalsOptimal Control of Airport Operations with Gate Capacity Constraints Harshad Khadilkar and Hamsa

Gummadi, Ramakrishna

230

American Institute of Aeronautics and Astronautics Impact of Arrivals on Departure Taxi Operations at Airports  

E-Print Network [OSTI]

-out operations. Through an analysis of departures out of John F. Kennedy International Airport and Boston Logan affect departure operations at Boston Logan International Airport (BOS) as well as those at other International Airport, several variables affecting taxi-out times were identified, including primarily

Gummadi, Ramakrishna

231

NGATS ATM-Airportal Project Reference Material (External Release) Next Generation Air Transportation System  

E-Print Network [OSTI]

NGATS ATM-Airportal Project Reference Material (External Release) Next Generation Air Transportation System (NGATS) Air Traffic Management (ATM) - Airportal Project Reference Material May 23, 2007 Manager NASA Mike Madson Project Scientist NASA #12;NGATS ATM-Airportal Project Reference Material

232

Feasibility Analysis of Aircraft Landing Scheduling for Non-Controlled Airports  

E-Print Network [OSTI]

Feasibility Analysis of Aircraft Landing Scheduling for Non-Controlled Airports AIAA-2004 airports Air traffic control automation system development Trajectory analysis Aircraft landing scheduling aircraft scheduling will become the key operational issue at non-controlled airports as the operation

Valasek, John

233

Ongoing LED RD Challenges (LED droop still challenge)  

Energy Savers [EERE]

and Nonpolar GaN Semi polar GaN SOLUTION New GaN Crystal Planes * Semipolar planes for blue, green and yellow LEDs A. Romanov et al. : J. Appl. Phys. 100 (2006) 023533. (1122)...

234

Observations of W intering Snowy Owls ( Nyctea scandiaca ) at Logan Airport, East Boston, Massachusetts fr om 1981-1997  

E-Print Network [OSTI]

International Airport, Boston, MA. 591 #12;2nd Owl Symposium under snow with the noise at Logan Airport. DataObservations of W intering Snowy Owls ( Nyctea scandiaca ) at Logan Airport, East Boston in East Boston, MA, latitude 42°22N and longitude 071°01W . The 13th busiest in the world, the airport

235

Tenth USA/Europe Air Traffic Management Research and Development Seminar (ATM2013) Airport Characterization for the Adaptation of  

E-Print Network [OSTI]

of surface congestion management approaches. Data and case studies from Boston Logan International Airport, New York's LaGuardia Airport and Philadelphia International Airport are used to illustrate burn and emissions. A recent study of major US airports estimated that Philadelphia International

Gummadi, Ramakrishna

236

Freight/logistics symposium ..2 Airport guidebook...................3  

E-Print Network [OSTI]

· Freight/logistics symposium ..2 · Airport guidebook...................3 · State Fair exhibit Administration in Boston, is charged with improving the nation's transpor- tation system through collaborations between the USDOT and other federal, state, local, and international agencies and entities. "This

Minnesota, University of

237

CLOUD COVER REPORTING BIAS AT MAJOR AIRPORTS Richard Perez  

E-Print Network [OSTI]

CLOUD COVER REPORTING BIAS AT MAJOR AIRPORTS Richard Perez Joshua A. Bonaventura-Sparagna & Marek Kmiecik ASRC, SUNY, Albany, NY Ray George & David Renné NREL, Golden, CO ABSTRACT Cloud cover has been generated all or in part from cloud cover measurements [1,2]. This paper presents evidence

Perez, Richard R.

238

Issue 417 October 2014 At an airport without an operational  

E-Print Network [OSTI]

to the standard non-towered airport procedures. The following ASRS reports highlight some of the problems commonly A C680 Flight Crew had to abort their takeoff when an aircraft made an unannounced departure-Pilot called, "Airspeed alive" and then said he saw an airplane far down the runway. I yelled, "Abort" below 50

239

Integrating repositories with fuel cycles: The airport authority model  

SciTech Connect (OSTI)

The organization of the fuel cycle is a legacy of World War II and the cold war. Fuel cycle facilities were developed and deployed without consideration of the waste management implications. This led to the fuel cycle model of a geological repository site with a single owner, a single function (disposal), and no other facilities on site. Recent studies indicate large economic, safety, repository performance, nonproliferation, and institutional incentives to collocate and integrate all back-end facilities. Site functions could include geological disposal of spent nuclear fuel (SNF) with the option for future retrievability, disposal of other wastes, reprocessing with fuel fabrication, radioisotope production, other facilities that generate significant radioactive wastes, SNF inspection (navy and commercial), and related services such as SNF safeguards equipment testing and training. This implies a site with multiple facilities with different owners sharing some facilities and using common facilities - the repository and SNF receiving. This requires a different repository site institutional structure. We propose development of repository site authorities modeled after airport authorities. Airport authorities manage airports with government-owned runways, collocated or shared public and private airline terminals, commercial and federal military facilities, aircraft maintenance bases, and related operations - all enabled and benefiting the high-value runway asset and access to it via taxi ways. With a repository site authority the high value asset is the repository. The SNF and HLW receiving and storage facilities (equivalent to the airport terminal) serve the repository, any future reprocessing plants, and others with needs for access to SNF and other wastes. Non-public special-built roadways and on-site rail lines (equivalent to taxi ways) connect facilities. Airport authorities are typically chartered by state governments and managed by commissions with members appointed by the state governor, county governments, and city governments. This structure (1) enables state and local governments to work together to maximize job and tax benefits to local communities and the state, (2) provides a mechanism to address local concerns such as airport noise, and (3) creates an institutional structure with large incentives to maximize the value of the common asset, the runway. A repository site authority would have a similar structure and be the local interface to any national waste management authority. (authors)

Forsberg, C. [Massachusetts Inst. of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139-4307 (United States)

2012-07-01T23:59:59.000Z

240

Comprehensive Energy Management and CC® at DFW Airport  

E-Print Network [OSTI]

- 174 gates ? 685,000 operations annually ? 60 million passengers annually ? $26.5 MM energy budget ? ~200 electric accounts ? 20 natural gas accounts 7.7 miles 8 .1 mi le s Continuous Commissioning? of DFW International Airport, ICEBO... October 20, 2011 3 Continuous Commissioning? - Consolidated Rent-A-Car Center ? Opened in 2000, First CC in 2004 and a follow up in 2010 ? Excessive outside air ? Duct static pressure too high ? Economizer cycle was not optimized ? Space...

Kramer, L.

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

MgGa liquid metal ion source for implantation doping of GaN J. Cheng and A. J. Steckla)  

E-Print Network [OSTI]

with a spring-type reservoir, which is constructed using tungsten wire and a ceramic tube. The source has been was selected to form the emitter and spring-shaped reservoir because of its high melting point and stiffness in a molybdenum crucible, which was supported by a tungsten coil in the center of the test station chamber

Steckl, Andrew J.

242

Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin  

E-Print Network [OSTI]

N-based alloys may have some potential as thermoelectric materials at high temperature. It was found with the active thermoelectric cooling implemented on the same material system can improve the device performance to the thermal challenges. Apparently, the preferred thermoelectric material, in terms of integration

243

Optically pumped whispering-gallery mode lasing from 2-?m GaN micro-disks pivoted on Si  

SciTech Connect (OSTI)

2-?m micro-disks containing InGaN/GaN quantum wells supported on a tiny Si nanotip are fabricated via microsphere lithography followed by dry and wet etch processes. The micro-disks are studied by photoluminescence at both room-temperature and 10?K. Optically pumped blue lasing at room-temperature is observed via whispering-gallery modes (WGMs) with a lasing threshold as low as 8.43 mJ/cm{sup 2}. Optical resonances in the micro-disks are studied through numerical computations and finite-difference time-domain simulations. The WGMs are further confirmed through the measured broadband transmission spectrum, whose transmission minima coincide well with predicted WGM frequencies.

Zhang, Yiyun; Ma, Zetao; Zhang, Xuhui; Choi, H. W., E-mail: hwchoi@hku.hk [Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road (Hong Kong); Wang, T. [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)

2014-06-02T23:59:59.000Z

244

Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors  

SciTech Connect (OSTI)

Two schemes of nucleation and growth of gallium nitride on Si(111) substrates are investigated and the structural and electrical properties of the resulting films are reported. Gallium nitride films grown using a 10{endash}500 nm-thick AlN buffer layer deposited at high temperature ({similar_to}1050{degree}C) are found to be under 260{endash}530 MPa of tensile stress and exhibit cracking, the origin of which is discussed. The threading dislocation density in these films increases with increasing AlN thickness, covering a range of 1.1 to {gt}5.8{times}10{sup 9}cm{sup {minus}2}. Films grown using a thick, AlN-to-GaN graded buffer layer are found to be under compressive stress and are completely crack free. Heterojunction field effect transistors fabricated on such films result in well-defined saturation and pinch-off behavior with a saturated current of {similar_to}525 mA/mm and a transconductance of {similar_to}100 mS/mm in dc operation. {copyright} 2001 American Institute of Physics.

Marchand, H.; Zhao, L.; Zhang, N.; Moran, B.; Coffie, R.; Mishra, U. K.; Speck, J. S.; DenBaars, S. P.; Freitas, J. A.

2001-06-15T23:59:59.000Z

245

Acceptor binding energies in GaN and AlN Francisco Mireles and Sergio E. Ulloa  

E-Print Network [OSTI]

of hydrogen on the conductivity of ZnO nanoparticles has implications for nanoscale optoelectronic devices of nanoparticles is a key requirement for practical applications of these materials for optoelectronic devices

Ulloa, Sergio E.

246

Thermodynamics and Enzymatic Polymerization of Artificial Metallo-Nucleic Acids AND Investigation of Duplex Formation between GAN and RNA  

E-Print Network [OSTI]

°C rt (92%). (c) DMTrCl, pyridine, rt (69%). (d) (iPr) 2 NP(Cl)OEtCN, (iPr) 2 NEt, CH 2 Cl 2 , rt (71%). Scheme 1. 7N,N-diisopropylehylamine ((iPr) 2 NEt) and 2-cyanoehtyl-N,N-

Kim, Eun Kyong

2011-01-01T23:59:59.000Z

247

Méthodologie d'analyse de défaillance pour l'évaluation de la fiabilité de diodes électroluminescentes GaN.  

E-Print Network [OSTI]

??Ce mémoire s'inscrit dans la construction d'une méthodologie d'analyse de défaillance pour l'évaluation de la fiabilité de diodes électroluminescentes, par une approche basée sur l'analyse… (more)

Baillot, Raphaël

2011-01-01T23:59:59.000Z

248

Highly mismatched crystalline and amorphous GaN(1-x)As(x) alloys in the whole composition range  

E-Print Network [OSTI]

applications The direct conversion of sunlight into hydrogenthe photoanodes for the direct conversion of sunlight into

Yu, K. M.

2010-01-01T23:59:59.000Z

249

Erbium-doped GaN optical amplifiers operating at 1.54 m R. Dahal,1,2  

E-Print Network [OSTI]

are not possible to attain either with Er-doped silica glasses or nar- row gap semiconductor materials such InGaAsP gain. Earlier reports addressed increasing the absorption cross section by introducing Yb3 in this wavelength range and optical signal absorption is expected to be negli- gible since the material band gap

Jiang, Hongxing

250

Thermodynamics and Enzymatic Polymerization of Artificial Metallo-Nucleic Acids AND Investigation of Duplex Formation between GAN and RNA  

E-Print Network [OSTI]

cells on a Varian Cary 500 UV-Vis spectrophotometer equipped with a Peltiercell on a Varian Cary 500 UV-Vis spectrophotometer equipped with a Peltier

Kim, Eun Kyong

2011-01-01T23:59:59.000Z

251

Belgirate, Italy, 28-30 September 2005 THERMAL MODELLING OF MULTI-FINGER ALGAN/GAN HEMT's  

E-Print Network [OSTI]

dissipation of 1.8W. Table 1 gives the thermal conductivity of the materials used in the simul grown on SiC or sapphire substrates. Sapphire substrates are relatively cheap, but their low thermal conductivity is a major disadvantage. To improve the thermal performance, a hybrid integration of the HEMT onto

Paris-Sud XI, Université de

252

Electrical spin injection using GaCrN in a GaN based spin light emitting diode  

SciTech Connect (OSTI)

We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

Banerjee, D.; Ganguly, S.; Saha, D., E-mail: dipankarsaha@iitb.ac.in [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); IITB-Monash Research Academy, Indian Institute of Technology Bombay, Mumbai 400076 (India); Adari, R.; Sankaranarayan, S.; Kumar, A. [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India)] [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S. [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)] [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)

2013-12-09T23:59:59.000Z

253

Yu Gan, Godfrey Miller, Carl Boettiger 1.1.ReachReach SuperfluidSuperfluid StateState  

E-Print Network [OSTI]

#12;Gas GaloreGas Galore Yawwn. Watching Dan do everything is hard work So many tanks... So confused with helium gasPump chamber with helium gas (Actually, we only did this on cool(Actually, we only did oil50's equipment Liquid Nitrogen Fountain pieces Protective plastic guard THE DEWERTHE DEWER Why am I

254

Composition and Interface Analysis of InGaN/GaN Multiquantum-Wells on GaN  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed New SubstationCleanCommunity Involvement andMISR, and4ComplianceCW 2013 Oct 25

255

Fabrication of GaN nanowire arrays by confined epitaxy Xinyu Sun, Michael Fairchild, and Stephen D. Hersee  

E-Print Network [OSTI]

, Albuquerque, New Mexico 87106 and Department of Electrical and Computer Engineering, University of New Mexico, and Stephen D. Hersee Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, 1313 Goddard SE, Albuquerque, New Mexico 87106 Received 29 August 2006; accepted 26 October 2006

New Mexico, University of

256

E-Print Network 3.0 - airport demonstration project Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

will emerge and how airport infrastructure is able to accommodate ... Source: Massachusetts Institute of Technology (MIT),Department of Civil and Environmental Engineering,...

257

airport ground-crew workers: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: radioactively-contaminated sites are part of the Formerly Utilized Sites Remedial Action Program (FUSRAP the Airport resulted in the contamination of numerous...

258

E-Print Network 3.0 - airport operations Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Public Airports Association Kansas Department Source: Reich, Peter B. - Department of Forest Resources, University of Minnesota Collection: Environmental Sciences and Ecology 4...

259

E-Print Network 3.0 - airport planning Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Iowa Public Airports Association Kansas ... Source: Reich, Peter B. - Department of Forest Resources, University of Minnesota Collection: Environmental Sciences and Ecology 3...

260

E-Print Network 3.0 - airport tower stressful Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Storage, Conversion and Utilization 2 Technical Report Documentation Page 1. Report No. Summary: -Texas Corridor and the Texas Airport System: Opportunities and Challenges 6....

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

E-Print Network 3.0 - aviation airport runways Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Systems Research Summary: Administration PRM Precision Runway Monitor System ICAO International Civil Aviation Organization 12;George... , several major airports operate with an...

262

E-Print Network 3.0 - airport ground transportation Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

LEAKED: 9 Car Insurance Your... of Dallas- Fort Worth International Airport. "This is the new reality," ... Source: Huang, Jianyu - Department of Physics, Boston...

263

E-Print Network 3.0 - airport parking Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and Utilization 13 APPROXIMATE TAXI FARES From Midway -35 Summary: International Airport is approximately eight miles west of the University of Chicago campus. Midway is...

264

E-Print Network 3.0 - airport surface traffic control Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

20 Technical Report Documentation Page 1. Report No. Summary: of airports. The defining document for traffic control devices is the Manual on Uniform Traffic Control... code can...

265

Low-altitude atmospheric turbulence around an airport  

E-Print Network [OSTI]

COLLECTION Description of Site The site chosen for the data collection was the former Bryan Air Force Base, now used as the Texas A&II Research Annex. The base is located on Texas State Highway 21 approximately 6 mi west of Bryan, Texas. Figures 6... on the ground. Table 3 lists the results recorded by the five individual wind systems. While certain runs were made primarily to produce "turbu- lence maps" of the airport area, others--as noted in the table-- were made over only one site. The primary...

Cass, Stanley Dale

1972-01-01T23:59:59.000Z

266

The Integrated Airport: Building a Successful NextGen Testbed  

ScienceCinema (OSTI)

This presentation will describe a unique public-private partnership - the Integrated Airport - that was created to engage in research and testing related to NextGen Technology deployment.  NextGen refers to the program that will be initiated to modernize the US National Airspace.  As with any major, multi-decade initiative, such as NextGen, integration of work efforts by multiple partners in the modernization is critical for success.  This talk will focus on the development of the consortium, how the consortium plans for NextGen initiatives, the series of technology demonstrations we have produced and plans for the future of NextGen testing and implementation. 

Christina Frederick-Recascino

2010-01-08T23:59:59.000Z

267

DOE - Office of Legacy Management -- St Louis Airport - MO 01  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou are herePAOsborneSavannahIllinoisPennsylvaniaAirport

268

Hungary HEU Removal Airport Ops | National Nuclear Security Administration  

National Nuclear Security Administration (NNSA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofofOxfordVeterans | National Nuclear Security AdministrationAirport

269

Capital improvements can contribute greatly to an airport's future success, but  

E-Print Network [OSTI]

description, cost estimate, federal programming sheets (available at www.mnaero.com), and start date. FederalCapital improvements can contribute greatly to an airport's future success, but they require a serious financial commit- ment by the airport owner. Planning ahead for capital improvements is critical

Minnesota, University of

270

Please fax to: 949 -824-9690 Attention: Tanya Zabalegui UCI Extension Airport Transportation Request  

E-Print Network [OSTI]

Please fax to: 949 -824-9690 Attention: Tanya Zabalegui ­ UCI Extension Airport Transportation in the UC Irvine area and need transportation from the airport to your housing location, please readth , 2011. Destinations: We will provide transportation to your housing location including UC Irvine

Stanford, Kyle

271

Directions to the University of Connecticut Storrs Campus From Bradley International Airport  

E-Print Network [OSTI]

Directions to the University of Connecticut ­ Storrs Campus From Bradley International Airport: As you exit the airport take CT-20 towards I-91 (Hartford/Springfield) for about 4 miles. Take I-91 South miles. Take the I-84 East exit towards Boston for about 12.5 miles to exit 68 (Route 195). Travel south

Olshevsky, Vadim

272

IEEE TRANSACTIONS ON INTELLIGENT TRANSPORTATION SYSTEMS, IN PRESS, AUGUST 2013 1 Dynamic Control of Airport Departures  

E-Print Network [OSTI]

Rate Control at Boston airport in 2011, and the development of a decision-support tool for its illustrates this behavior for the most frequently used runway configuration at Boston Logan International of Airport Departures: Algorithm Development and Field Evaluation Ioannis Simaiakis, Melanie Sandberg

Gummadi, Ramakrishna

273

Ninth USA/Europe Air Traffic Management Research and Development Seminar (ATM2011) Demonstration of Reduced Airport Congestion  

E-Print Network [OSTI]

Demonstration at Boston Logan International Airport (BOS) was to show that a significant portion Cambridge, MA, USA B. Reilly Boston Airport Traffic Control Tower Federal Aviation Administration Boston, MA and emissions at major airports. This paper describes the field tests of a congestion control strategy at Boston

Gummadi, Ramakrishna

274

Hot Corrosion at Air-Ports in Kraft Recovery Boilers  

SciTech Connect (OSTI)

Hot corrosion can occur on the cold-side of airports in Kraft recovery boilers. The primary corrosion mechanism involves the migration of sodium hydroxide and potassium hydroxide vapors through leaks in the furnace wall at the airports and their subsequent condensation. It has been reported that stainless steel is attacked much faster than carbon steel in composite tubes, and that carbon steel tubing, when used with a low-chromium refractory, does not exhibit this type of corrosion. For hot corrosion fluxing of metal oxides, either acidic or basic fluxing takes place, with a solubility minimum at the basicity of transition between the two reactions. For stainless steel, if the basicity of the fused salt is between the iron and chromium oxide solubility minima, then a synergistic effect can occur that leads to rapid corrosion. The products of one reaction are the reactants of the other, which eliminates the need for rate-controlling diffusion. This effect can explain why stainless steel is attacked more readily than carbon steel.

Holcomb, Gordon R.; Covino, Bernard S., Jr.; Russell, James H.

2003-01-01T23:59:59.000Z

275

Combined Retrieval, Microphysical Retrievals and Heating Rates  

DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

Microphysical retrievals and heating rates from the AMIE/Gan deployment using the PNNL Combined Retrieval.

Feng, Zhe

276

Combined Retrieval, Microphysical Retrievals and Heating Rates  

SciTech Connect (OSTI)

Microphysical retrievals and heating rates from the AMIE/Gan deployment using the PNNL Combined Retrieval.

Feng, Zhe

2013-02-22T23:59:59.000Z

277

A linear programming solution to the gate assignment problem at airport terminals  

E-Print Network [OSTI]

This research solves the flight-to-gate assignment problem at airports in such a way as to minimize, or at least reduce, walking distances for passengers inside terminals. Two solution methods are suggested. The first is ...

Mangoubi, Rami

1980-01-01T23:59:59.000Z

278

How to prepare an airport for the Olympic Games? : transportation of the Olympic Family Members  

E-Print Network [OSTI]

This thesis describes and assesses the preparation of Athens International Airport for and its performance during the Olympic Games in 2004. The analysis includes infrastructural modifications made and organizational ...

Kassens, Eva

2005-01-01T23:59:59.000Z

279

E-Print Network 3.0 - airport traffic Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

section IV.A.2). If the airport's traffic is heavily geared toward O&D traffic, then demand... for maximizing this economic activity include maximizing passenger volumes and...

280

E-Print Network 3.0 - airport noise Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

27... 52 FIGURES Figure 1: Location of the Portland-Hillsboro Airport 6 Figure 2: Response to Noise... and Impact on Property Values 10 Figure 3: Noise Contours for ... Source:...

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Estimating current and future benefits of airport surface congestion management techniques  

E-Print Network [OSTI]

Air traffic is expected to continue to grow in the future and improved methods for dealing with the increased demand on the system need to be designed and implemented. One method for reducing surface congestion at airports ...

Nakahara, Alex (Alex Hiroo)

2012-01-01T23:59:59.000Z

282

Development of techniques for rapidly assessing the local air quality impacts of airports  

E-Print Network [OSTI]

The combustion of fossil fuels for aviation activity harms air quality and human health near airports through the production of PM2.5. Currently, dispersion models can assess these local-scale (distances ~10 km) impacts, ...

Lee, Gideon (Gideon Luther)

2012-01-01T23:59:59.000Z

283

Observation and Analysis of Departure Planning Operations at Boston Logan International Airport  

E-Print Network [OSTI]

The Departure Planner (DP) is a concept for a decision-aiding tool that is aimed at improving the departure operations performance at major congested airports. In order to support the development of the DP tool, the flow ...

Idris, Husni R.

2011-10-14T23:59:59.000Z

284

Estimation of the economic relationship of an airport to the regional economy : a critical analysis  

E-Print Network [OSTI]

In the past decade many major U.S. airports have encountered extensive opposition to plans for future growth and expansion from environmentalists and community groups who cite the noise and air pollution created and the ...

Fortune, Stephen James

1981-01-01T23:59:59.000Z

285

DOE to Build Hydrogen Fuel Test Facility at West Virginia Airport  

Broader source: Energy.gov [DOE]

The Office of Fossil Energy's National Energy Technology Laboratory today announced plans to construct and operate a hydrogen fuel production plant and vehicle fueling station at the Yeager Airport in Charleston, W.Va.

286

Zoning administrators and others con-cerned with airport land use will soon  

E-Print Network [OSTI]

Zoning administrators and others con- cerned with airport land use will soon have help when of the current regulatory rules and climate. The manual describes proce- dural requirements and guidelines, along

Minnesota, University of

287

Energy, Shading and Daylighting Analysis for the Austin Bergstrom International Airport Terminal  

E-Print Network [OSTI]

Our firm was under contract with the City of Austin, Texas to perform energy analysis and analysis of the daylighting potential within the New Austin Bergstrom International Airport Terminal. Design of the Passenger Terminal Facility for the New...

Holder, L. M. III; Holder, L. M. IV

2002-01-01T23:59:59.000Z

288

Evolution of domestic traffic and fares at the top 200 US airports between 1990 and 2008  

E-Print Network [OSTI]

The main objective of this thesis is to analyze the evolution of domestic Origin- Destination (O-D) traffic and fares at the Top 200 airports in the United States between 1990 and 2008. The impetus behind this research is ...

Ben Abda, Mehdi

2010-01-01T23:59:59.000Z

289

Airport Viz - A 3D Tool to Enhance Security Operations | ornl...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

simulation and 3D visualization engine, capable of running on a laptop or high-end graphics workstation, Airport Viz allows a number of alternative designs to be studied....

290

Airport snow removal is a critical winter operation in Minnesota. To ensure effective  

E-Print Network [OSTI]

training program and do we document our training activities? · Do we have good weather forecast- ing, visit www.AirTAP.umn.edu. A publication of the Airport Technical Assistance Program of the Center

Minnesota, University of

291

Public Funding of Airport Incentives: The Efficacy of the Small Community Air Service Development Grant (SCASDG) Program  

E-Print Network [OSTI]

As U.S. airlines began to restrict available domestic capacity at smaller airports in 2008 as a result of higher

Wittman, Michael D.

2014-01-08T23:59:59.000Z

292

Uranium characterization at the St. Louis Airport Site  

SciTech Connect (OSTI)

In support of the Department of Energy/Office of Technology Development`s Expedited Site Characterization (ESC) project (coordinated by Ames Laboratory), the Pacific Northwest Laboratory demonstrated two complementary technologies at the St. Louis Airport (SLAP) site that have been designed and optimized for the rapid, in situ quantification of radionuclide contamination in surface soils. The sensors are optimized for the detection of high-energy beta particles or gamma rays emitted from the decay of specific radionuclides of interest. These technologies were demonstrated by measuring the beta and gamma fluxes at several locations within the SLAP site. Measurements were converted to average contamination levels, using detector calibrations performed with spiked samples (beta) or sealed sources (gamma). Additionally, subsurface activity levels were derived from discrete soil samples (provided by the ESC field crew) via gamma-ray spectrometry in a controlled laboratory setting. Since the beta and gamma sensor technologies are intrinsically sensitive to different types of radiation and activity distributions (i.e., surface and shallow subsurface, respectively), the data obtained from the two detectors provide complementary information about the distribution of the contamination. The results reported here suggest that a number of locations within the SLAP site have elevated levels of {sup 211}U, and the differences between the beta and gamma activities indicate that the contamination is largely located near the surface of the soil.

Schilk, A.J.; Hubbard, C.W.; Bowyer, T.W. [Pacific Northwest Lab., Richland, WA (United States); Reiman, R.T. [Technical Measurement Co., Boulder, CO (United States)

1995-05-01T23:59:59.000Z

293

A publication of the Airport Technical Assistance Program of the Center for Transportation Studies at the University of Minnesota Purchasing equipment for your airport can  

E-Print Network [OSTI]

/DOT Aeronautics regional engineer and other resources such as the AirTAP Capital Improvement Program (CIP) Guide and future needs, research equipment types and manufacturers, get several price estimates, justify the need for the equip- ment, provide background information to your airport sponsor, and verify that the costs

Minnesota, University of

294

Improving Building Comfort and Energy Savings of the McKenzie Airport Terminal by Maintaining and Improving Pneumatic Control Systems  

E-Print Network [OSTI]

McKenzie Airport Terminal is located at Easterwood Airport, which is owned and operated by Texas A&M University. It was built in 1988. Most all HVAC equipment, which includes boiler, chiller, pumps, AHUs and exhaust fans, due to lack of maintenance...

Liu, C.; Bruner, H. L.; Deng, S.; Brundidge, T.; Turner, W. D.; Claridge, D. E.

2004-01-01T23:59:59.000Z

295

Abstract--Historic data shows an increase in carbon dioxide (CO2) emissions at airports caused by an increase  

E-Print Network [OSTI]

design alternatives provides reduction of CO2 emission levels such that the CO2 emissions for 2050 meet Abstract-- Historic data shows an increase in carbon dioxide (CO2) emissions at airports caused regulations at airports through reduction of CO2 for all components of flight operations. The purpose

296

Cost Benefit Analysis Modeling Tool for Electric vs. ICE Airport Ground Support Equipment – Development and Results  

SciTech Connect (OSTI)

This report documents efforts to develop a computer tool for modeling the economic payback for comparative airport ground support equipment (GSE) that are propelled by either electric motors or gasoline and diesel engines. The types of GSE modeled are pushback tractors, baggage tractors, and belt loaders. The GSE modeling tool includes an emissions module that estimates the amount of tailpipe emissions saved by replacing internal combustion engine GSE with electric GSE. This report contains modeling assumptions, methodology, a user’s manual, and modeling results. The model was developed based on the operations of two airlines at four United States airports.

James Francfort; Kevin Morrow; Dimitri Hochard

2007-02-01T23:59:59.000Z

297

Problem Statement: Airports need to achieve carbon neutral growth operating an enterprise  

E-Print Network [OSTI]

for Rental Cars and Commercial Vehicles Convert Rental Cars from Gas to Hybrid 50% Rental Fleet to Hybrid 0. Alternatively Fueled Airport Access Taxis (e.g. Hybrids or Electric vehicles) Inhibiting Factors to Carbon annually) 0.63 17,400 Alternatively Fueled Taxis Convert Taxi Fleet to Hybrid [Control through MWAA

298

An investigation of the information needs of air passengers traveling to the airport  

E-Print Network [OSTI]

, 1998). As the popularity of air travel continues to increase, the number of trips to and from the airport will inevitably rise also. Passengers will need accurate information about all modes on a total trip basis. This includes the modes of access...

Burdette, Debra Arlene

2000-01-01T23:59:59.000Z

299

For any Minnesota airport, winter is a hard time of year. Snow storms, freezing rain,  

E-Print Network [OSTI]

of the Airport Technical Assistance Program of the Center for Transportation Studies at the University Board, and Minnesota Local Technical Assistance Program. For more information about the expo visit www safely plowed in addition to their countless other winter weather responsibilities. At this year

Minnesota, University of

300

Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy  

E-Print Network [OSTI]

B 22, 1145 ?2004?. A. Armstrong, A. R. Arehart, D. Green, U.San Diego, 1992?. A. Armstrong, A. R. Arehart, and S. A.molecular beam epitaxy A. Armstrong Department of Electrical

Armstrong, A; Poblenz, C; Green, D S; Mishra, U K; Speck, J S; Ringel, S A

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Importance of excitonic effects and the question of internal electric fields in stacking faults and crystal phase quantum discs: The model-case of GaN  

E-Print Network [OSTI]

. Pemasiri, M. Montazeri, R. Gass, L. M. Smith, H. E. Jackson, J. Yarrison-Rice, S. Paiman, Q. Gao, H. Hoe Tan, C. Jagadish, X. Zhang, and J. Zou, Nano Lett. 9, 648 (2009). 14J. Ristic´, E. Calleja, M. A. S#2;anchez-Garc#2;?a, J. M. Ulloa, J. S#2;anchez- P#2... , Phys. Rev. B 57, R9427 (1998). 37H. Y. Xu, Z. Liu, Y. Y. Rao, X. T. Zhang, and S. K. Hark, Appl. Phys. Lett. 95, 133108 (2009). 053512-5 P. Corfdir and P. Lefebvre J. Appl. Phys. 112, 053512 (2012) ...

Corfdir, Pierre; Lefebvre, Pierre

2012-01-01T23:59:59.000Z

302

Light-emitting diode development on polar and non-polar GaN substrates C. Wetzel a,b,, M. Zhu a,b  

E-Print Network [OSTI]

,b , J. Senawiratne a,b , T. Detchprohm a,b , P.D. Persans b , L. Liu c , E.A. Preble c , D. Hanser c

Wetzel, Christian M.

303

Top-gate thin-film transistors based on GaN channel layer Rongsheng Chen, Wei Zhou, and Hoi Sing Kwok  

E-Print Network [OSTI]

exhibit good electrical performance such as field effect mobility of 1 cm2 /Vs, threshold voltage of �0 and poly-Si TFTs.6­8 However, the poor electrical sta- bility of ZnO-based TFTs is still a main issue mobility (6 � 10�2 cm2 /Vs) and low on/off current ratio (3 � 103 ), due to local- ized gap states in Ga

304

3.3 PUBLICATIONS Gan, Z.,W. Wong and J. J. Liou, Semiconductor Process Reliability in Practice, McGraw-Hill,  

E-Print Network [OSTI]

the Airborne Hurricane Imaging Radiometer", Trans. GeoSci. Remote Sens., Vol. 50, Issue 1, 2012, pp. 180-192. 2, S., J. Wu, H. Yan and J. J. Liou, "High voltage silicon controlled rectifier for ESD applications, "Vehicle to Grid Services, Potentials, and Applications," Energies, Vol.5. 2012, pp. 4076-4090. 6. Faiz, J

Pattanaik, Sumanta N.

305

In situ characterization of GaN quantum dot growth with reflection high-energy electron diffraction and line-of-sight mass spectrometry  

E-Print Network [OSTI]

mass spectrometry and re?ection high-energy electronmass spectrometry ?QMS? and re?ection high-energy electron

Brown, J S; Koblmuller, G; Averbeck, R; Riechert, H; Speck, J S

2006-01-01T23:59:59.000Z

306

Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and reflection high-energy electron diffraction  

E-Print Network [OSTI]

mass spectrometry and re?ection high-energy electronmass spectrometry ?QMS? and re?ection high-energy electron

Brown, J S; Koblmuller, G; Wu, F; Averbeck, R; Riechert, H; Speck, J S

2006-01-01T23:59:59.000Z

307

Journal of Crystal Growth 310 (2008) 23202325 Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown  

E-Print Network [OSTI]

materials, and intrinsic quantum mechanical energy loss of the wavelength conversion process via Stokes, Muhammad Jamil, Nelson Tansu Department of Electrical and Computer Engineering, Center for Optical. These results demonstrates that high In-content InGaN QDs can be grown by MOVPE, and can potentially be utilized

Gilchrist, James F.

2008-01-01T23:59:59.000Z

308

Langmuir Films of Anthracene Derivatives on Liquid Mercury II: Asymmetric Molecules Department of Physics, Bar-Ilan UniVersity, Ramat-Gan 52900, Israel  

E-Print Network [OSTI]

and anthraquinone. In the high-coverage phase, the molecules are either standing up (anthrone) or remain side- lying (anthralin) on the mercury surface. In contrast with the symmetric anthracene and anthraquinone, both high (LFs) of anthracene and anthraquinone molecules, the structure of which is symmetric relative to both

Pershan, Peter S.

309

Doping of MBE grown cubic GaN on 3C-SiC (001) by CBr4 ,E. Tschumak1  

E-Print Network [OSTI]

source. The CBr4 beam equivalent pressure was established by a needle valve and was varied between 2x10 has a very low diffusion coefficient [3]. It is also known from p-doping in (Al)GaAs that carbon4 beam equivalent pressure (BEP) was established by a needle valve and was varied between 2x10

As, Donat Josef

310

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect (OSTI)

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

311

ATLAS Pixel Opto-Electronics K.E. Arms, K.K. Gan, P. Jackson, M. Johnson, H. Kagan, R. Kass, A.M. Rahimi,  

E-Print Network [OSTI]

, Universitaet Siegen, 57068 Siegen, Germany ABSTRACT We have developed two radiation-hard ASICs for optical data boards (opto-boards). The optical readout system will be exposed to a large dosage of radiation. We assume that the main radiation effect is surface damage in the CMOS devices due to ionizing radiation

Gan, K. K.

312

A Web-Based Platform for Experimental Investigation of Electric Power Auctions Ray D. Zimmerman Robert J. Thomas Deqiang Gan Carlos Murillo-Snchez  

E-Print Network [OSTI]

arrangements to support com- petition among energy suppliers. The US is not the first in the world to embark

313

Visible-light absorption and large band-gap bowing of GaN1-xSbx from first principles  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

Applicability of the Ga(Sbx)N1-x alloys for practical realization of photoelectrochemical water splitting is investigated using first-principles density functional theory incorporating the local density approximation and generalized gradient approximation plus the Hubbard U parameter formalism. Our calculations reveal that a relatively small concentration of Sb impurities is sufficient to achieve a significant narrowing of the band gap, enabling absorption of visible light. Theoretical results predict that Ga(Sbx)N1-x alloys with 2-eV band gaps straddle the potential window at moderate to low pH values, thus indicating that dilute Ga(Sbx)N1-x alloys could be potential candidates for splitting water under visible light irradiation.

Sheetz, R. Michael; Richter, Ernst; Andriotis, Antonis N.; Lisenkov, Sergey; Pendyala, Chandrashekhar; Sunkara, Mahendra K.; Menon, Madhu

2011-08-01T23:59:59.000Z

314

LEDs on Semipolar Bulk GaN Substrate with IQE > 80% at 150 A/cm2 and 100ËšC  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeatMulti-Dimensionalthe10 DOEWashington, DCKickoffLDV HVAC ModelLEDLightsLEDLEDs

315

Why some airport-rail links get built and others do not : the role of institutions, equity and financing  

E-Print Network [OSTI]

The thesis seeks to provide an understanding of reasons for different outcomes of airport ground access projects. Five in-depth case studies (Hongkong, Tokyo-Narita, London- Heathrow, Chicago- O'Hare and Paris-Charles de ...

Nickel, Julia, S.M. Massachusetts Institute of Technology

2011-01-01T23:59:59.000Z

316

Using a Constant Volume Displacement Ventilation System to Create a Micro Climate in a Large Airport Terminal in Bangkok  

E-Print Network [OSTI]

In order to conserve energy and create a comfortable climate for both passengers and workers at a new large international airport in Thailand, a design concept was created where only the first 2m above the occupied zone is conditioned...

Simmonds, P.; Gaw, W.

1996-01-01T23:59:59.000Z

317

The effects of capacity discipline on smaller U.S. airports : trends in service, connectivity, and fares  

E-Print Network [OSTI]

After decades of growth in domestic flights, seats, and available seat-miles, airlines reduced capacity at airports across the United States from 2007-2012 in response to a global economic downturn and high and volatile ...

Wittman, Michael D. (Michael David)

2014-01-01T23:59:59.000Z

318

Electronic properties of gallium nitride nanowires  

E-Print Network [OSTI]

This thesis presents a systematic study of the electrical transport in GaN nanowires. Particularly, the effect of the surrounding dielectric on the conductivity of GaN nanowires is experimentally shown for the first time. ...

Yoon, Joonah

2008-01-01T23:59:59.000Z

319

Celebration of Student Writing Prof. Kim Emmons Profs. Mark Bassett & Kim Emmons Prof. Dominguez Dominguez Course  

E-Print Network [OSTI]

Barzilai & Prof. McGucken Joshua Barzilai's Poster Joshua Barzilai Bear-Johnson & Shahin Poster Katelyn (CSW) Ashley Gan Ashley Gan's Poster Samuel Geiger's Poster Samuel Geiger & Friend Samuel Geiger Julia

Rollins, Andrew M.

320

Atomistic Simulations of the Size, Orientation and Temperature...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Behavior in GaN Nanowires. Abstract: Molecular dynamics simulations with Stillinger-Weber potentials were used to study the response of wurtzite-type single crystalline GaN...

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

322

Estimating Traveler Populations at Airport and Cruise Terminals for Population Distribution and Dynamics  

SciTech Connect (OSTI)

In recent years, uses of high-resolution population distribution databases are increasing steadily for environmental, socioeconomic, public health, and disaster-related research and operations. With the development of daytime population distribution, temporal resolution of such databases has been improved. However, the lack of incorporation of transitional population, namely business and leisure travelers, leaves a significant population unaccounted for within the critical infrastructure networks, such as at transportation hubs. This paper presents two general methodologies for estimating passenger populations in airport and cruise port terminals at a high temporal resolution which can be incorporated into existing population distribution models. The methodologies are geographically scalable and are based on, and demonstrate how, two different transportation hubs with disparate temporal population dynamics can be modeled utilizing publicly available databases including novel data sources of flight activity from the Internet which are updated in near-real time. The airport population estimation model shows great potential for rapid implementation for a large collection of airports on a national scale, and the results suggest reasonable accuracy in the estimated passenger traffic. By incorporating population dynamics at high temporal resolutions into population distribution models, we hope to improve the estimates of populations exposed to or at risk to disasters, thereby improving emergency planning and response, and leading to more informed policy decisions.

Jochem, Warren C [ORNL; Sims, Kelly M [ORNL; Bright, Eddie A [ORNL; Urban, Marie L [ORNL; Rose, Amy N [ORNL; Coleman, Phil R [ORNL; Bhaduri, Budhendra L [ORNL

2013-01-01T23:59:59.000Z

323

2009 Minerals Yearbook U.S. Department of the Interior  

E-Print Network [OSTI]

As and gallium nitride (GaN) and was used in integrated circuits (ICs) and optoelectronic devices [laser diodes

324

Fourier analysis of light scattered by elongated scatterers Zeev Schiffer, Yosef Ashkenazy, Reuven Tirosh, and Mordechai Deutsch  

E-Print Network [OSTI]

Tirosh, and Mordechai Deutsch Biological stimulation of living cells is sometimes associated-Gan 52900, Israel. M. Deutsch's

Ashkenazy, Yossi "Yosef"

325

ATLAS ATLAS ATLAS ATLAS  

E-Print Network [OSTI]

traces August 10, 2000 DPF2000 A Novel Optical Package for the ATLAS Pixel Detector (page 8) K.K. GanATLAS ATLAS ATLAS ATLAS A Novel Optical Package for the ATLAS Pixel Detector K.K. Gan The Ohio Summary August 10, 2000 DPF2000 A Novel Optical Package for the ATLAS Pixel Detector (page 1) K.K. Gan

Gan, K. K.

326

ATLAS ATLAS ATLAS ATLAS  

E-Print Network [OSTI]

ATLAS ATLAS ATLAS ATLAS Status of Optical Electronics K.K. Gan Ohio State University June 14, 2000 ATLAS Pixel Week June 14, 2000 ATLAS Pixel Week Status of Optical Electronics (page 1) K.K. Gan Ohio State University #12; ATLAS ATLAS ATLAS ATLAS Opto­electronics Team Ohio State University: K.K. Gan

Gan, K. K.

327

Joint ATLAS/CMS SLHC Opto WG 1 March 5, 2010  

E-Print Network [OSTI]

Joint ATLAS/CMS SLHC Opto WG 1 March 5, 2010 K.K. Gan Status of the Development of On ATLAS/CMS SLHC Opto WG 2 Outline Introduction Current work with IBL Schedule K.K. Gan #12;K.K. Gan Joint ATLAS/CMS SLHC Opto WG 3 Introduction A proposal to develop on-detector array-based opto

Gan, K. K.

328

DPF2011 1 August 12, 2011  

E-Print Network [OSTI]

irradiation and annealing (biased/no radiation) decrease in optical power is modest annealing in progress "will recover most lost optical power irradiation annealing #12;DPF2011 K.K. Gan 11 Radiation/pions irradiation Results on VCSEL with protons/pions irradiation Summary K.K. Gan #12;K.K. Gan DPF2011 3

Gan, K. K.

329

Airport Viz - A 3D Tool to Enhance Security Operations | ornl.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth (AOD)ProductssondeadjustsondeadjustAbout the BuildingInnovationAirport Viz - A 3D Tool to Enhance Security

330

EA-2000: Proposed Land Transfer to Develop a General Aviation Airport at the East Tennessee Technology Park Heritage Center, Oak Ridge, Tennessee  

Broader source: Energy.gov [DOE]

DOE is preparing an EA to assess potential environmental impacts of the proposed land transfer to the Metropolitan Knoxville Airport Authority for the development of a general aviation airport at the East Tennessee Technology Park Heritage Center, in Oak Ridge, Tennessee. Public Comment Opportunities None available at this time. Documents Available for Download No downloads found for this office.

331

St. Louis Airport site environmental report for calendar year 1989, St. Louis, Missouri  

SciTech Connect (OSTI)

The environmental monitoring program, which began in 1984, continued during 1989 at the St. Louis Airport Site (SLAPS) in St. Louis County, Missouri. SLAPS and its vicinity properties, including ditches north and south of the site, were designated for cleanup as part of the Formerly Utilized Sites Remedial Action Program (FUSRAP), a United States Department of Energy (DOE) program to identify and decontaminate or otherwise control sites where residual radioactive material remains from the early years of the nation's atomic energy program. The monitoring program at SLAPS measures radon concentrations in air; external gamma dose rates; and uranium, thorium, and radium concentrations in surface water, groundwater, and sediment. Additionally, several nonradiological parameters are measured in groundwater. To assess the potential effect of SLAPS on public health, the potential radiation dose was estimated for a hypothetical maximally exposed individual. This report presents the findings of the environmental monitoring program conducted at the St. Louis Airport Site (SLAPS) during calendar year 1989. 19 refs., 13 figs., 14 tabs.

Not Available

1990-05-01T23:59:59.000Z

332

St. Louis Airport site: Annual site environmental report, Calendar Year 1986. [FUSRAP  

SciTech Connect (OSTI)

During 1986, the environmental monitoring program was continued at the St. Louis Airport Site (SLAPS) in St. Louis County, Missouri. The ditches north and south of the site were designated for cleanup as part of the Formerly Utilized Sites Remedial Action Program (FUSRAP), a United States Department of Energy (DOE) program to identify, decontaminate, or control sites where residual radioactive material remains from the early years of the nation's atomic energy program. The site is currently controlled by the St. Louis Airport Authority. The monitoring program measures radon gas concentrations in air; external gamma dose rates; and uranium, thorium, and radium concentrations in surface water, groundwater, and sediment. The radiation dose was calculated for the maximally exposed individual. Based on the scenario described in this report, the maximally exposed individual would receive an external exposure approximately equivalent to 4.7 percent of the DOE radiation protection standard of 100 mrem/yr. The dose to the population within an 80-km (50-mi) radius of the SLAPS that would result from radioactive materials present at the site would be indistinguishable from the dose the population would receive from naturally occurring radioactive sources. 12 refs., 5 figs., 10 tabs.

Not Available

1987-05-01T23:59:59.000Z

333

Simulation to assess the efficacy of US airport entry scrreening of passengers for pandemic influenza  

SciTech Connect (OSTI)

We present our methodology and stochastic discrete-event simulation developed to model the screening of passengers for pandemic influenza at the US port-of-entry airports. Our model uniquely combines epidemiology modelling, evolving infected states and conditions of passengers over time, and operational considerations of screening in a single simulation. The simulation begins with international aircraft arrivals to the US. Passengers are then randomly assigned to one of three states -- not infected, infected with pandemic influenza and infected with other respiratory illness. Passengers then pass through various screening layers (i.e. pre-departure screening, en route screening, primary screening and secondary screening) and ultimately exit the system. We track the status of each passenger over time, with a special emphasis on false negatives (i.e. passengers infected with pandemic influenza, but are not identified as such) as these passengers pose a significant threat as they could unknowingly spread the pandemic influenza virus throughout our nation.

Mcmahon, Benjamin [Los Alamos National Laboratory

2009-01-01T23:59:59.000Z

334

Forecast-Based Decision Support for San Francisco International Airport: A NextGen Prototype System That Improves Operations during Summer Stratus Season  

E-Print Network [OSTI]

During summer, marine stratus encroaches into the approach to San Francisco International Airport (SFO) bringing low ceilings. Low ceilings restrict landings and result in a high number of arrival delays, thus impacting ...

Reynolds, David W.

335

Civil aircraft accident Report on the Accident to Boeing 707-465 G-Arwe at Heathrow Airport, London on 8th April 1968   

E-Print Network [OSTI]

A3.C.A.P. 324 Civil aircraft accident Report on the Accident to Boeing 707-465 G-Arwe at Heathrow Airport, London on 8th April 1968...

Anonymous

1969-01-01T23:59:59.000Z

336

Letter Report: Yucca Mountain Environmental Monitoring Systems Initiative - Air Quality Scoping Study for Tonopah Airport, Nye County, Nevada  

SciTech Connect (OSTI)

The Desert Research Institute (DRI) is performing a scoping study as part of the U.S. Department of Energy's Yucca Mountain Environmental Monitoring Systems Initiative (EMSI). The main objective is to obtain baseline air quality information for Yucca Mountain and an area surrounding the Nevada Test Site (NTS). Air quality and meteorological monitoring and sampling equipment housed in a mobile trailer (shelter) is collecting data at eight sites outside the NTS, including Ash Meadows National Wildlife Refuge (NWR), Tonopah Airport, Beatty, Rachel, Caliente, Pahranagat NWR, Crater Flat, and the Tonopah Airport, and at four sites on the NTS (Engelbrecht et al., 2007a-d). The trailer is stationed at any one site for approximately eight weeks at a time. This letter report provides a summary of air quality and meteorological data, on completion of the site's sampling program.

J. Engelbrecht; I. Kavouras; D Campbell; S. Campbell; S. Kohl, D. Shafer

2008-08-01T23:59:59.000Z

337

Letter Report Yucca Mountain Environmental Monitoring Systems Initiative - Air Quality Scoping Study for Tonopah Airport, Nye County, Nevada  

SciTech Connect (OSTI)

The Desert Research Institute (DRI) is performing a scoping study as part of the U.S. Department of Energy's Yucca Mountain Environmental Monitoring Systems Initiative (EMSI). The main objective is to obtain baseline air quality information for Yucca Mountain and an area surrounding the Nevada Test Site (NTS). Air quality and meteorological monitoring and sampling equipment housed in a mobile trailer (shelter) is collecting data at eight sites outside the NTS, including Ash Meadows National Wildlife Refuge (NWR), Tonopah Airport, Beatty, Rachel, Caliente, Pahranagat NWR, Crater Flat, and the Tonopah Airport, and at four sites on the NTS (Engelbrecht et al., 2007a-d). The trailer is stationed at any one site for approximately eight weeks at a time. This letter report provides a summary of air quality and meteorological data, on completion of the site's sampling program.

J. Engelbrecht; I. Kavouras; D. Campbell; S. Campbell; S. Kohl; D. Shafer

2009-04-02T23:59:59.000Z

338

Electric Ground Support Equipment Advanced Battery Technology Demonstration Project at the Ontario Airport  

SciTech Connect (OSTI)

The intent of the electric Ground Support Equipment (eGSE) demonstration is to evaluate the day-to-day vehicle performance of electric baggage tractors using two advanced battery technologies to demonstrate possible replacements for the flooded lead-acid (FLA) batteries utilized throughout the industry. These advanced battery technologies have the potential to resolve barriers to the widespread adoption of eGSE deployment. Validation testing had not previously been performed within fleet operations to determine if the performance of current advanced batteries is sufficient to withstand the duty cycle of electric baggage tractors. This report summarizes the work performed and data accumulated during this demonstration in an effort to validate the capabilities of advanced battery technologies. This report summarizes the work performed and data accumulated during this demonstration in an effort to validate the capabilities of advanced battery technologies. The demonstration project also grew the relationship with Southwest Airlines (SWA), our demonstration partner at Ontario International Airport (ONT), located in Ontario, California. The results of this study have encouraged a proposal for a future demonstration project with SWA.

Tyler Gray; Jeremy Diez; Jeffrey Wishart; James Francfort

2013-07-01T23:59:59.000Z

339

St. Louis airport site annual environmental report for calendar year 1990, St. Louis, Missouri  

SciTech Connect (OSTI)

Environmental monitoring of the US Department of Energy's (DOE) St. Louis Airport Site (SLAPS) and surrounding area began in 1984. SLAPS is part of the Formerly Utilized Sites Remedial Action Program (FUSRAP), a DOE program to decontaminate or otherwise control sites where residual radioactive materials remain from the early years of the nation's atomic energy program or from commercial operations causing conditions that Congress has authorized DOE to remedy. Monitoring results are compared with applicable Environmental Protection Agency (EPA) standards; federal, state, and local applicable or relevant and appropriate requirements (ARARs); and/or DOE derived concentration guidelines (DCGs). Environmental standards, ARARs, and DCGs are established to protect public health and the environment. Results from the 1990 environmental monitoring program demonstrated that the concentrations of contaminants of concern were all below applicable standards, ARARs, and guidelines. Site activities in 1990 were limited to maintenance. SLAPS was in compliance with all applicable regulations during 1990 and has remained in compliance since 1984, when the environmental monitoring program and remedial action began.

Not Available

1991-08-01T23:59:59.000Z

340

St. Louis Airport Site annual site environmental report. Calendar year 1985  

SciTech Connect (OSTI)

During 1985, the environmental monitoring program was continued at the St. Louis Airport Site (SLAPS) in St. Louis County, Missouri. The ditches north and south of the site have been designated for cleanup as part of the Formerly Utilized Sites Remedial Action Program (FUSRAP), a United States Department of Energy (DOE) program to identify, decontaminate, or otherwise control sites where low-level radioactive contamination remains from the early years of the nation's atomic energy program. The site is not currently controlled or regulated by DOE or NRC, although radiological monitoring of the site has been authorized by the DOE. The monitoring program at the SLAPS measures radon gas concentrations in air; external gamma radiation dose rates; and uranium, thorium, and radium concentrations in surface water, groundwater, and sediment. Potential radiation doses to the public are also calculated. Because the site is not controlled or regulated by the DOE, the DOE Derived Concentration Guides (DCGs) are not applicable to SLAPS, but are included as a basis for comparison only. The DOE DCGs and the DOE radiation protection standard have been revised.

Not Available

1986-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Review of EU airport energy interests and priorities with respect to ICT, energy efficiency and enhanced building operation  

E-Print Network [OSTI]

settings. CASCADE is aiming also at turning FDD into the actionable information by developing an energy action plan that links Actions-Actors-ISO Standards (ISO, 2011) through a web-based management portal. The developed ICT solutions will be able... performance benchmarks 5. Making an Energy Action Plan that links actors, actions, and ISO standards based on facility specific data and providing cost/benefit (kWh, CO2, Euros). CASCADE approach focuses to the actions which airports can take in order...

Costa, A.; Blanes, L. M.; Donnelly, C.; Keane, M. M.

2012-01-01T23:59:59.000Z

342

automated concise extraction: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of Computer Science, Bar-Ilan University, Ramat-Gan 52900, Israel 4 Center for Automation Research, University of Maryland Plaza, Antonio J. 5 Automated Pointcut Extraction...

343

automated rna extraction: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of Computer Science, Bar-Ilan University, Ramat-Gan 52900, Israel 4 Center for Automation Research, University of Maryland Plaza, Antonio J. 5 Automated Pointcut Extraction...

344

E-Print Network 3.0 - alternative proposal acoustic Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

'acoustique 1990 APPLICATION OF FAST HARTLEY TRANSFORM TO ACOUSTIC INTENSITY MEASUREMENT W.S. GAN Acoustical... Services (1989)Pte Ltd, 29 Telok Ayer Street, Singapore 0104....

345

E-Print Network 3.0 - advanced electronic applications Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Engineering, Boston University Collection: Engineering 90 Kompetenzzentrum fr Automobil-und Industrieelektronik Summary: applications. GaN based electronic chip production...

346

E-Print Network 3.0 - advanced model based Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Collection: Computer Technologies and Information Sciences 51 Kompetenzzentrum fr Automobil-und Industrieelektronik Summary: applications. GaN based electronic chip production...

347

E-Print Network 3.0 - analisis asistido por Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Sciences 66 diciembre 2010 Sabas Que? Summary: alcance es responsable por el reclutamiento de estudiantes actuales y aun hasta los no estudiantes que... , Topeka, KS y gan...

348

E-Print Network 3.0 - aristolochia birostris ducht Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Long Dan Xie Gan Wan is listed as containing Caulis Aristolochiae... Aristolochia fruit 2.00%. 3. Stephania tetrandra and Astragalus, Plum Flower Brand purchased from...

349

Myers et al. Page 1 Use of High Temperature Hydrogen Annealing to  

E-Print Network [OSTI]

GaN T. H Myers, B. L. VanMil and L. J. Holbert, Department of Physics C. Y. Peng and C. D Stinespring

Myers, Tom

350

aln film deposited: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

deposited by the reactive dc magnetron sputtering technique at room, amorphous and polycrystalline GaN thin films have been deposited using the magnetron sputtering...

351

aln thin films: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

deposited by the reactive dc magnetron sputtering technique at room, amorphous and polycrystalline GaN thin films have been deposited using the magnetron sputtering...

352

aln films deposited: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

deposited by the reactive dc magnetron sputtering technique at room, amorphous and polycrystalline GaN thin films have been deposited using the magnetron sputtering...

353

15100r08.fm  

Office of Scientific and Technical Information (OSTI)

Other accomplishments of this past reporting period include obtaining a complete land grid for the State of Michi- gan and further processing of the high and medium resolution...

354

Benefits of the MSOL program Study when and where it's convenient for you  

E-Print Network [OSTI]

Photoelectrochemical undercut etching for fabrication of GaN microelectromechanical systems A. R cantilever microelectromechanical systems from InGaN/GaN hetero- structures. Fabricated cantilevers were

355

E-Print Network 3.0 - anthraquinones Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Engineering ; Materials Science 2 Langmuir Films of Anthracene Derivatives on Liquid Mercury I: Symmetric Molecules Department of Physics, Bar-Ilan UniVersity, Ramat-Gan 52900,...

356

Environmental Microbiology  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Kuske & John Dunbar * PCR primer set design from complex datasets: Jason Gans * Genomics and metatranscriptome analysiscomputation: Jean Challacombe * Meta 'omics approaches...

357

Environmental Microbiology  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Cheryl Kuske & John Dunbar PCR primer set design from complex datasets: Jason Gans Genomics and metatranscriptome analysiscomputation: Jean Challacombe Meta 'omics approaches...

358

Physics based analytical modelling of Gallium Nitride(GaN) MESFET considering different ion implantation energy with high temperature annealing.  

E-Print Network [OSTI]

??A physics based analytical model of ion implanted GaN MESFET has been presented considering high temperature annealing effects. Choosing appropriate activation energy of impurity atoms,… (more)

Raghavan, Vinay

2015-01-01T23:59:59.000Z

359

amendment donor deferral: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Lingwen Gan for handling the un- certainties of renewable generation. Traditionally, demand response has been focused in renewable generation. In this paper, we propose a...

360

Train directions from Newark Airport to Nassau Inn or Palmer House Hotel Train is the most convenient way to get to Princeton from EWR. From the terminals at  

E-Print Network [OSTI]

Train directions from Newark Airport to Nassau Inn or Palmer House Hotel Train is the most), and proceed to track 5. You need the NorthEast Corridor (NEC) train to Trenton (not Long Branch). They go is valid for any train on this route. The ride takes 40-45 minutes, and you exit at Princeton Junction

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Tell President Obama About Coal River Mountain Coal River Mountain and the Heathrow Airport runway remind me how important it is to  

E-Print Network [OSTI]

Tell President Obama About Coal River Mountain Coal River Mountain and the Heathrow Airport runway remind me how important it is to keep our eye on the ball. Coal River Mountain is the site of an absurdity. I learned about Coal River Mountain from students at Virginia Tech last fall. They were concerned

Hansen, James E.

362

RADIATION-HARD OPTO-LINK FOR THE ATLAS PIXEL DETECTOR K.K. GAN, K.E. ARMS, M. JOHNSON, H. KAGAN, R. KASS, C. RUSH, S. SMITH,  

E-Print Network [OSTI]

the ROD, bi-phase mark (BPM) encoded with the data (command) signal to control the pixel detector, is transmitted via a fiber to a PIN diode. This BPM encoded signal is decoded using a Digital Opto The DORIC decodes BPM encoded clock and data signals received by a PIN diode. The BPM signal is derived from

Gan, K. K.

363

Public health assessment for St. Louis Airport, Hazelwood Interim Storage/Futura Coatings Company, St. Louis, St. Louis County, Missouri, Region 7. Cerclis No. MOD980633176. Preliminary report  

SciTech Connect (OSTI)

The St. Louis Airport/Hazelwood Iterim Storage/Futura Coatings Company, a National Priorities List site, is in St. Louis County, Missouri. From 1946 to 1973, the site was used to store radioactive materials resulting from uranium processing. High levels of uranium, thorium, radium, and radon were detected in soil, groundwater, and air. The site is still being used to store radioactive materials. The Agency for Toxic Substances and Disease Registry considers the St. Louis Airport site to be an indeterminate public health hazard. Although there are emissions of radon and the presence of thorium in on-site air and off-site soils and the emission of radiation resulting from the presence of these materials is not currently considered a health hazard. At present conditions, the concentration of radon off-site is indistinguishable from background levels. However, in the past, these contaminants may have been present at levels of health concern.

Not Available

1994-01-20T23:59:59.000Z

364

Scanned probe characterization of semiconductor nanostructures  

E-Print Network [OSTI]

of the window and wing region of the a–plane GaN film,? m thick GaN film was then grown through the windows in thewindow regions, lateral overgrowth over the dielectric mask, and coalescence of the film

Law, James Jeremy MacDonald

2009-01-01T23:59:59.000Z

365

ATLAS ATLAS ATLAS ATLAS  

E-Print Network [OSTI]

ATLAS ATLAS ATLAS ATLAS Status of Optical Electronics K.K. Gan Ohio State University February 1, 2000 ATLAS Pixel Week February 1, 2000 ATLAS Pixel Week Status of Optical Electronics (page 1) K.K. Gan Ohio State University #12; ATLAS ATLAS ATLAS ATLAS VCSEL Driver Chip ffl VDC converts LVDS signal

Gan, K. K.

366

ATLAS ATLAS ATLAS ATLAS  

E-Print Network [OSTI]

ATLAS ATLAS ATLAS ATLAS Status of Optical Electronics K.K. Gan Ohio State University September 26, 2000 ATLAS Pixel Week September 26, 2000 ATLAS Pixel Week Status of Optical Electronics (page 1) K.K. Gan Ohio State University #12; ATLAS ATLAS ATLAS ATLAS Opto­electronics Team Ohio State University: K

Gan, K. K.

367

ATLAS ATLAS ATLAS ATLAS  

E-Print Network [OSTI]

ATLAS ATLAS ATLAS ATLAS Status of Optical Package Development K.K. Gan Ohio State University December 4, 1999 ATLAS Week Outline of Talk ffl Marconi Package ffl Taiwan Package ffl OSU Package December 4, 1999 ATLAS Week Status of Optical Package Development (page 1) K.K. Gan Ohio State University #12

Gan, K. K.

368

NANO EXPRESS Open Access Selective area epitaxy of ultra-high density InGaN  

E-Print Network [OSTI]

annealing and GaN spacer layer growth for improving the PL intensity of the SiNx-treated GaN surface in three dimensions for QD nanostructures so that the non-radiative recom- bination centers and defects can

Gilchrist, James F.

369

Cr-Ga-N materials for negative electrodes in Li rechargeable batteries : structure, synthesis and electrochemical performance  

E-Print Network [OSTI]

Electrochemical performances of two ternary compounds (Cr2GaN and Cr3GaN) in the Cr-Ga-N system as possible future anode materials for lithium rechargeable batteries were studied. Motivation for this study was dealt in ...

Kim, Miso

2007-01-01T23:59:59.000Z

370

Ultra-thin ohmic contacts for p-type nitride light emitting devices  

DOE Patents [OSTI]

A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 .ANG.. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.

Raffetto, Mark; Bharathan, Jayesh; Haberern, Kevin; Bergmann, Michael; Emerson, David; Ibbetson, James; Li, Ting

2014-06-24T23:59:59.000Z

371

Role of defects in III-nitride based electronics  

SciTech Connect (OSTI)

The LDRD entitled ``Role of Defects in III-Nitride Based Devices'' is aimed to place Sandia National Laboratory at the forefront of the field of GaN materials and devices by establishing a scientific foundation in areas such as material growth, defect characterization/modeling, and processing (metalization and etching) chemistry. In this SAND report the authors summarize their studies such as (1) the MOCVD growth and doping of GaN and AlGaN, (2) the characterization and modeling of hydrogen in GaN, including its bonding, diffusion, and activation behaviors, (3) the calculation of energetic of various defects including planar stacking faults, threading dislocations, and point defects in GaN, and (4) dry etching (plasma etching) of GaN (n- and p-types) and AlGaN. The result of the first AlGaN/GaN heterojunction bipolar transistor is also presented.

HAN,JUNG; MYERS JR.,SAMUEL M.; FOLLSTAEDT,DAVID M.; WRIGHT,ALAN F.; CRAWFORD,MARY H.; LEE,STEPHEN R.; SEAGER,CARLETON H.; SHUL,RANDY J.; BACA,ALBERT G.

2000-01-01T23:59:59.000Z

372

Geochemical information for sites contaminated with low-level radioactive wastes: II. St. Louis Airport Storage Site  

SciTech Connect (OSTI)

The St. Louis Airport Storage Site (SLASS) became radioactively contaminated as a result of wastes that were being stored from operations to recover uranium from pitchblende ores in the 1940s and 1950s. The US Department of Energy is considering various remedial action options for the SLASS under the Formerly Utilized Site Remedial Action Program (FUSRAP). This report describes the results of geochemical investigations, carried out to support the FUSRAP activities and to aid in quantifying various remedial action options. Soil and groundwater samples from the site were characterized, and sorption ratios for uranium and radium and apparent concentration limit values for uranium were measured in soil/groundwater systems by batch contact methodology. The uranium and radium concentrations in soil samples were significantly above background near the old contaminated surface horizon (now at the 0.3/sup -/ to 0.9/sup -/m depth); the maximum values were 1566 ..mu..g/g and 101 pCi/g, respectively. Below about the 6/sup -/m depth, the concentrations appeared to be typical of those naturally present in soils of this area (3.8 +- 1.2 ..mu..g/g and 3.1 +- 0.6 pCi/g). Uranium sorption ratios showed stratigraphic trends but were generally moderate to high (100 to 1000 L/kg). The sorption isotherm suggested an apparent uranium concentration limit of about 200 mg/L. This relatively high solubility can probably be correlated with the carbonate content of the soil/groundwater systems. The lower sorption ratio values obtained from the sorption isotherm may have resulted from changes in the experimental procedure or the groundwater used. The SLASS appears to exhibit generally favorable behavior for the retardation of uranium solubilized from waste in the site. Parametric tests were conducted to estimate the sensitivity of uranium sorption and solubility to the pH and carbonate content of the system.

Seeley, F.G.; Kelmers, A.D.

1985-01-01T23:59:59.000Z

373

St. Louis Airport Site. Annual site environmental report, calendar year 1985. Formerly Utilized Sites Remedial Action Program (FUSRAP). Revision 1  

SciTech Connect (OSTI)

During 1985, the environmental monitoring program was continued at the St. Louis Airport Site (SLAPS) in St. Louis County, Missouri. The ditches north and south of the site have been designated for cleanup as part of the Formerly Utilized Sites Remedial Action Program (FUSRAP). The monitoring program at the SLAPS measures radon gas concentrations in air; external gamma radiation dose rates; and uranium, thorium, and radium concentrations in surface water, groundwater, and sediment. Potential radiation doses to the public are also calculated. Because the site is not controlled or regulated by the DOE, the DOE Derived Concentration Guides (DCGs) are not applicable to SLAPS, but are included only as a basis for comparison. The DOE DCGs and the DOE radiation protection standard have been revised. (Appendix B). During 1985, annual average radon levels in air at the SLAPS were below the DCG for uncontrolled areas. External gamma monitoring in 1985 showed measured annual gamma dose rates ranging from 3 to 2087 mrem/y, with the highest value occurring in an area known to be contaminated. The calculated maximum dose at the site boundary, assuming limited occupancy, would be 6 mrem/y. Average annual concentrations of /sup 230/Th, /sup 226/Ra, and total uranium in surface waters remained below the DOE DCG. The on-site groundwater measurements showed that average annual concentrations of /sup 230/Th, /sup 226/Ra and total uranium were within the DOE DCGs. Although there are no DCGs for sediments, all concentrations of total uraniu, /sup 230/Th, and /sup 226/Ra were below the FUSRAP Guidelines.

Not Available

1986-09-01T23:59:59.000Z

374

Developing health-based pre-planning clearance goals for airport remediation following a chemical terrorist attack: Decision criteria for multipathway exposure routes  

SciTech Connect (OSTI)

In the event of a chemical terrorist attack on a transportation hub, post-event remediation and restoration activities necessary to attain unrestricted facility re-use and re-entry could require hours to multiple days. While timeframes are dependent on numerous variables, a primary controlling factor is the level of pre-planning and decision-making completed prior to chemical release. What follows is the second of a two-part analysis identifying key considerations, critical information and decision criteria to facilitate post-attack and post-decontamination consequence management activities. Decision criteria analysis presented here provides first-time, open-literature documentation of multi-pathway, health-based remediation exposure guidelines for selected toxic industrial compounds, chemical warfare agents, and agent degradation products for pre-planning application in anticipation of a chemical terrorist attack. Guideline values are provided for inhalation and direct ocular vapor exposure routes as well as percutaneous vapor, surface contact, and ingestion. Target populations include various employees as well as transit passengers. This work has been performed as a national case study conducted in partnership with the Los Angeles International Airport and The Bradley International Terminal. All recommended guidelines have been selected for consistency with airport scenario release parameters of a one-time, short-duration, finite airborne release from a single source followed by compound-specific decontamination.

Watson, Annetta Paule [ORNL; Dolislager, Frederick [University of Tennessee, Knoxville (UTK); Hall, Dr. Linda [ENVIRON International Corporation; Hauschild, Veronique [U.S. Army Center for Health Promotion and Preventive Medicine; Raber, Ellen [Lawrence Livermore National Laboratory (LLNL); Love, Dr. Adam [Johnson Wright, Inc.

2011-01-01T23:59:59.000Z

375

Developing health-based pre-planning clearance goals for airport remediation following chemical terrorist attack: Introduction and key assessment considerations  

SciTech Connect (OSTI)

In the event of a chemical terrorist attack on a transportation hub, post-event remediation and restoration activities necessary to attain unrestricted facility re-use and re-entry could require hours to multiple days. While restoration timeframes are dependent on numerous variables, a primary controlling factor is the level of pre-planning and decision-making completed prior to chemical terrorist release. What follows is the first of a two-part analysis identifying key considerations, critical information, and decision criteria to facilitate post-attack and post-decontamination consequence management activities. A conceptual site model and human health-based exposure guidelines are developed and reported as an aid to site-specific pre-planning in the current absence of U.S. state or Federal values designated as compound-specific remediation or re-entry concentrations, and to safely expedite facility recovery to full operational status. Chemicals of concern include chemical warfare nerve and vesicant agents and the toxic industrial compounds phosgene, hydrogen cyanide, and cyanogen chloride. This work has been performed as a national case study conducted in partnership with the Los Angeles International Airport and The Bradley International Terminal. All recommended guidelines have been selected for consistency with airport scenario release parameters of a one-time, short-duration, finite airborne release from a single source followed by compound-specific decontamination.

Watson, Annetta Paule [ORNL; Raber, Ellen [Lawrence Livermore National Laboratory (LLNL); Dolislager, Frederick [University of Tennessee, Knoxville (UTK); Hauschild, Veronique [U.S. Army Center for Health Promotion and Preventive Medicine; Hall, Dr. Linda [ENVIRON International Corporation; Love, Dr. Adam [Johnson Wright, Inc.

2011-01-01T23:59:59.000Z

376

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

377

Applied Materials Develops an Advanced Epitaxial Growth System to Bring Down LED Costs  

Broader source: Energy.gov [DOE]

With the help of DOE funding, Applied Materials has developed an advanced epitaxial growth system for gallium nitride (GaN) LED devices that decreases operating costs, increases internal quantum efficiency, and improves binning yields.

378

NETL F 451.1/1-1, Categorical Exclusion Designation Form  

Broader source: Energy.gov (indexed) [DOE]

Electronics Int'l. EE Toyota OEPMPVTD FY14-15 1012013 to 9302015 John Tabacchi Ann Arbor, Washtenaw, MI Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for...

379

Vehicle Technologies Office Merit Review 2014: Advanced Low-Cost...  

Broader source: Energy.gov (indexed) [DOE]

Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction Drives Vehicle Technologies Office Merit Review 2014: Advanced Low-Cost SiC and...

380

Radiation-Hardened Gallium Nitride Detector and Arrays for Fusion Diagnostics  

SciTech Connect (OSTI)

This poster reports testing to confirm that GaN devices exhibit the extreme radiation hardness needed for use at the NIF, functioning properly after 1x10{sup 12} protons/cm{sup 2} proton irradiation in one year.

Sun, K. X., and MacNeil, L.

2011-09-08T23:59:59.000Z

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

E-Print Network 3.0 - al si mg Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

. investigated the diffusion behavior of Mg in GaN and AlGaN layers during MOCVD growth.13) Their study concluded... that no signifi- cant diffusionsegregation behavior...

382

IIl-nitride nanowires and heterostructures : growth and optical properties on nanoscale  

E-Print Network [OSTI]

Gallium nitride (GaN) and indium gallium nitride (InGaN) nanowires promise potential for further improving the electricity-to-light energy conversion efficiencies in light emitting diodes due to strain relaxation, reduced ...

Zhou, Xiang, Ph. D. Massachusetts Institute of Technology

2014-01-01T23:59:59.000Z

383

Publications, 2014 | MIT-Harvard Center for Excitonics  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

117, 8290-8298. Shiue, Ren-Jye; Gan, Xuetao; and Englund, Dirk, "On-chip graphene optoelectronic devices for high-speed modulation and photodetection," Proc. SPIE OPTO, 89940P...

384

E-Print Network 3.0 - algan-based deep ultraviolet Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GanAlgan- Based Laser Diodes with Modulation-Doped Strained... in ultraviolet optoelectronics2-4 , room temperature lasing5-8 , and solar cells applications9... -LEDs and...

385

E-Print Network 3.0 - algan-based laser diodes Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GaN and GaNAlGaN quantum structures for UV electroabsorption modulators Summary: optoelectronics industry.1,2 In the visible spectral range, light emitting diodes,3 laser...

386

E-Print Network 3.0 - aln interlayer thicknesses Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

size. Introduction GaN and its alloys with InN and AlN have been used for optoelectronic devices Source: Dietz, Nikolaus - Department of Physics and Astronomy, Georgia State...

387

2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 1 www.advmat.de  

E-Print Network [OSTI]

-frequency transistors and optoelectronic devices.1­3 It has been reported that self-heating effects in GaN transistors and for tuning the wavelength of the emitted light in optoelectronic devices. They were also proposed

Atwater, Harry

388

E-Print Network 3.0 - atomization characteristics final Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Sciences 15 The properties of amorphous GaN B. Cai and D. A. Drabold Summary: IPR and projected them onto individual atom sites. In Fig.5, we present the characteristic...

389

G?ru?a Medicine: A History of Snakebite and Religious Healing in South Asia  

E-Print Network [OSTI]

yad avocad um?pati? / tad aha? sampravak?y?mi ???u gautamaca ?ivokta? pravad?my aham / (ravipul?). Unless otherwisekul??gan? vipravadh?r aha? ki? bhavanmate j??gulik? bhav?mi)

Slouber, Michael

2012-01-01T23:59:59.000Z

390

Measurements of molecular and thermal diffusion coefficients in ternary mixtures  

E-Print Network [OSTI]

of a polymer and a colloid in a water-ethanol solvent, treating the ternary mixture as a pseudobinary; Gans et polymer in a water-ethanol solvent mixture. They reported a sign change in the Soret coefficient

Firoozabadi, Abbas

391

doi:10.1016/S0092-8240(03)00007-7 Bulletin of Mathematical Biology (2003) 65, 375396  

E-Print Network [OSTI]

Gan, 52900, Israel E-mail: ylouzoun@princeton.edu SORIN SOLOMON Racah Institute for Physics, Hebrew methodology based on a combination between Monte-Carlo simulation and ele- ments from partial differential

392

Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystals  

SciTech Connect (OSTI)

We report on the spatially selective formation of GaN nanocrystals embedded in GaAs. Broad-area N{sup +} implantation followed by rapid thermal annealing leads to the formation of nanocrystals at the depth of maximum ion damage. With additional irradiation using a Ga{sup +} focused ion beam, selective lateral positioning of the nanocrystals within the GaAs matrix is observed in isolated regions of increased vacancy concentration. Following rapid thermal annealing, the formation of zincblende GaN is observed in the regions of highest vacancy concentration. The nucleation of zincblende nanocrystals over the wurtzite phase of bulk GaN is consistent with the predictions of a thermodynamic model for the nanoscale size-dependence of GaN nucleation.

Wood, A. W. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States); Collino, R. R. [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Cardozo, B. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Naab, F. [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109 (United States); Wang, Y. Q. [Materials Science and Technology Division, Los Alamos National Lab, Los Alamos, New Mexico 87545 (United States); Goldman, R. S. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2011-12-15T23:59:59.000Z

393

EMSL - radionuclides  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

radionuclides en Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. http:www.emsl.pnl.govemslwebpublications...

394

E-Print Network 3.0 - atlas insertable b-layer Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Search Powered by Explorit Topic List Advanced Search Sample search results for: atlas insertable b-layer Page: << < 1 2 3 4 5 > >> 1 K.K. Gan 1 Array-Based Opto-Link...

395

Device-level thermal analysis of GaN-based electronics  

E-Print Network [OSTI]

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

Bagnall, Kevin Robert

2013-01-01T23:59:59.000Z

396

DEAN'S LIST HONORABLE MENTION Fall Semester 2010  

E-Print Network [OSTI]

DEAN'S LIST HONORABLE MENTION Fall Semester 2010 Brown, Bryant P. Brown, Dustin H. Campbell Laughlin, Amanda Diane Lemieux, Sydnie Lynn Lesnewski, Michael Phillip Lester, David Ernest Li, Crystal Gan

Wong, Pak Kin

397

E-Print Network 3.0 - anthralin Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

for: anthralin Page: << < 1 > >> 1 Langmuir Films of Anthracene Derivatives on Liquid Mercury II: Asymmetric Molecules Department of Physics, Bar-Ilan UniVersity, Ramat-Gan 52900,...

398

E-Print Network 3.0 - anthraquinone derivatives derived Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

derived Page: << < 1 2 3 4 5 > >> 1 Langmuir Films of Anthracene Derivatives on Liquid Mercury I: Symmetric Molecules Department of Physics, Bar-Ilan UniVersity, Ramat-Gan 52900,...

399

Au-free Ohmic Contacts to Gallium Nitride and Graphene  

E-Print Network [OSTI]

This work deals with Au-free contact metallization schemes for gallium nitride (GaN) and graphene semiconductors. Graphene and gallium nitride are promising materials that can potentially be integrated together in the near future for high frequency...

Ravikirthi, Pradhyumna

2014-08-10T23:59:59.000Z

400

Nuclear Reactions and Reactor Safety  

E-Print Network [OSTI]

. Snoeijer 85 On the drag of turbulent vortex rings L. Gan, J. R. Dawson & T. B. Nickels 106 Subcritical Linear water waves: the horizontal motion of a structure in the time domain P. McIver 313 Transmission

Onuchic, José

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

ISSN 0022-1120 25 October 2012  

E-Print Network [OSTI]

. Snoeijer 85 On the drag of turbulent vortex rings L. Gan, J. R. Dawson & T. B. Nickels 106 Subcritical Linear water waves: the horizontal motion of a structure in the time domain P. McIver 313 Transmission

Dalziel, Stuart

402

Nat. Hazards Earth Syst. Sci., 11, 26632675, 2011 www.nat-hazards-earth-syst-sci.net/11/2663/2011/  

E-Print Network [OSTI]

is responsible for studying the safety and hazards of abandoned mines. One of the main scientific aims- gan on new extraction facilities and the mine operator kindly agreed to collaborate on the experiment

Boyer, Edmond

403

Closure Report for Corrective Action Unit 230: Area 22 Sewage Lagoons and Corrective Action Unit 320: Area 22 Desert Rock Airport Strainer Box Nevada Test Site, Nevada  

SciTech Connect (OSTI)

This Closure Report (CR) describes the remediation activities performed and the results of verification sampling conducted at Corrective Action Unit (CAU) 230, Area 22 Sewage Lagoons and CAU 320, Area 22 Desert Rock Airport Strainer Box. The CAU is currently listed in Appendix III of the Federal Facility Agreement and Consent Order (FFACO, 1996). The CAU is located in Area 22 of the Nevada Test Site (NTS) (Figure 1) and consists of the following Corrective Action Sites (CASs): 22-03-01- Sewage Lagoon (CAU 230); and 22-99-01- Strainer Box (CAU 320). Included with CAS 22-99-01 is a buried Imhoff tank and a sludge bed. These CAUs will be collectively referred to in this plan as the Area 22 Sewage Lagoons site. Site characterization activities were done during September 1999. Characterization of the manholes associated with the septic system leading to the Imhoff tank was done during March 2000. The results of the characterization presented in the Corrective Action Decision Document (CADD) indicated that only the sludge bed (CAS 22-99-01) contained constituents of concern (COC) above action levels and required remediation (U.S. Department of Energy, Nevada Operations Office [DOE/NV], 2000a).

D. S. Tobiason

2001-07-01T23:59:59.000Z

404

St. Louis airport site: Annual site environmental report, St. Louis, Missouri, Calendar Year 1988: Formerly Utilized Sites Remedial Action Program (FUSRAP)  

SciTech Connect (OSTI)

The monitoring program at St. Louis Airport Site (SLAPS) measures radon concentrations in air; external gamma dose rates; and uranium, thorium, and radium concentrations in surface water, groundwater, and sediment. To assess the potential effects of SLAPS on public health, the potential radiation dose was estimated for a hypothetical maximally exposed individual. Based on the scenario described in this report, this hypothetical individual would receive an external exposure approximately equivalent to 7.5 percent of the DOE radiation protection standard of 100 mrem/yr. This exposure is approximately the same as a person receives during two round-trip flights from New York to Los Angeles (because of greater amounts of cosmic radiation at higher altitudes). The cumulative dose to the population within an 80-km (50-mi) radius of SLAPS that results from radioactive materials present at the site is indistinguishable from the dose the same population receives from naturally occurring radioactive sources. Results of 1988 monitoring show that SLAPS is in compliance with the DOE radiation protection standard. 18 refs., 13 figs., 13 tabs.

Not Available

1989-04-01T23:59:59.000Z

405

Journal of Light Emitting Diodes Vol 2 N0 1, April 2010 1 Abstract--In metal organic vapor phase epitaxy we developed  

E-Print Network [OSTI]

Journal of Light Emitting Diodes Vol 2 N0 1, April 2010 1 Abstract-- In metal organic vapor phase epitaxy we developed GaInN/GaN quantum well material suitable for 500 ­ 580 nm light emitting diodes at longer wavelengths. Index Terms-- a-plane GaN, GaInN, Green light emitting diode, m-plane GaN I

Wetzel, Christian M.

406

2012/12/27 2 2012/12/27 3  

E-Print Network [OSTI]

HBTSolar cell Thick film MOCVD MMIC Lasers (strained QW, dilute nitride, QD) Solar cell III-V on Si Sb-based III-V Rectifier HBT, HEMT, Solar cells III-V on Si III-V on Si Solar cellSolar cell GaN LED, LD, power, lighting (AlGaInP, GaN) Communication (LD and detectors) Photovoltaic: Solar cells Design-house Epi

Hung, Shih-Hao

407

Abbreviated epitaxial growth mode (AGM) method for reducing cost and improving quality of LEDs and lasers  

DOE Patents [OSTI]

The use of an abbreviated GaN growth mode on nano-patterned AGOG sapphire substrates, which utilizes a process of using 15 nm low temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned AGOG sapphire by employing abbreviated growth mode has two orders of magnitude lower threading dislocation density than that of conventional GaN template grown on planar sapphire. The use of abbreviated growth mode also leads to significant reduction in cost of the epitaxy. The growths and characteristics of InGaN quantum wells (QWs) light emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano-patterned AGOG sapphire demonstrated at least a 24% enhancement of output power enhancement over that of LEDs grown on conventional GaN templates.

Tansu, Nelson; Chan, Helen M; Vinci, Richard P; Ee, Yik-Khoon; Biser, Jeffrey

2013-09-24T23:59:59.000Z

408

Airport sustainability encompasses a wide variety of airport management and  

E-Print Network [OSTI]

a cold winter climate, the efficiency of solar PV is high in Minnesota because of its many sunny days is to consider renewable energies. Solar photovoltaic (PV), which uses panels to absorb solar energy, is prob- ably the most commonly implemented type of renewable energy. Solar PV panels can be ground

Minnesota, University of

409

Heteroepitaxial growth of GaN/Si (111) junctions in ammonia-free atmosphere: Charge transport, optoelectronic, and photovoltaic properties  

SciTech Connect (OSTI)

We report the catalyst-free growth of gallium nitride (GaN) nanostructures on n-Si (111) substrates using physical vapor deposition via thermal evaporation of GaN powder at 1150 Degree-Sign C in the absence of NH{sub 3} gas. Scanning electron microscopy and energy dispersive x-ray analysis indicate that the growth rate of GaN nanostructures varies with deposition time. Photoluminescence spectra showed the suppression of the UV emission and the enhancement of the visible band emission with increasing the deposition time. The fabricated GaN nanostructures exhibited p-type behavior at the GaN/Si interface, which can be related to the diffusion of Ga into the Si substrate. The obtained lowest reflection and highest transmittance over a wide wavelength range (450-750 nm) indicate the high quality of the fabricated GaN films. Hall-effect measurements showed that all fabricated films have p-type behavior with decreasing electron concentration from 10{sup 21} to 10{sup 12} cm{sup -3} and increasing the electron mobility from 50 to 225 cm{sup 2}/V s with increasing the growth time. The fabricated solar cell based on the 1 h-deposited GaN nanostructures on n-Si (111) substrate showed a well-defined rectifying behavior with a rectification ratio larger than 8.32 Multiplication-Sign 10{sup 3} in dark. Upon illumination (30 mW/cm{sup 2}), the 1 h-deposited heterojunction solar cell device showed a conversion efficiency of 5.78%. The growth of GaN in the absence of NH{sub 3} gas has strong effect on the morphological, optical, and electrical properties and consequently on the efficiency of the solar cell devices made of such layers.

Saron, K. M. A.; Hashim, M. R. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, Penang 11800 (Malaysia); Allam, Nageh K. [Energy Materials Laboratory (EML), Department of Physics, School of Sciences and Engineering, The American University in Cairo, New Cairo 11835 (Egypt)

2013-03-28T23:59:59.000Z

410

Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

411

Investigation of the GaN-on-GaAs interface for vertical power device applications  

SciTech Connect (OSTI)

GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

2014-07-07T23:59:59.000Z

412

Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN  

SciTech Connect (OSTI)

Double heterostructures of strained GaN quantum wells (QWs) sandwiched between relaxed AlN layers provide a platform to investigate the quantum-confined electronic and optical properties of the wells. The growth of AlN/GaN/AlN heterostructures with varying GaN quantum well thicknesses on AlN by plasma molecular beam epitaxy (MBE) is reported. Photoluminescence spectra provide the optical signature of the thin GaN QWs. Reciprocal space mapping in X-ray diffraction shows that a GaN layer as thick as ?28 nm is compressively strained to the AlN layer underneath. The density of the polarization-induced two-dimensional electron gas (2DEG) in the undoped heterostructures increases with the GaN QW thickness, reaching ?2.5?×?10{sup 13}/cm{sup 2}. This provides a way to tune the 2DEG channel density without changing the thickness of the top barrier layer. Electron mobilities less than ?400 cm{sup 2}/Vs are observed, leaving ample room for improvement. Nevertheless, owing to the high 2DEG density, strained GaN QW field-effect transistors with MBE regrown ohmic contacts exhibit an on-current density ?1.4?A/mm, a transconductance ?280 mS/mm, and a cut off frequency f{sub T}?104?GHz for a 100-nm-gate-length device. These observations indicate high potential for high-speed radio frequency and high voltage applications that stand to benefit from the extreme-bandgap and high thermal conductivity of AlN.

Li, Guowang; Song, Bo; Ganguly, Satyaki; Zhu, Mingda; Wang, Ronghua; Yan, Xiaodong; Verma, Jai; Protasenko, Vladimir; Grace Xing, Huili; Jena, Debdeep, E-mail: djena@nd.edu [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)

2014-05-12T23:59:59.000Z

413

Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by germanium doping  

SciTech Connect (OSTI)

We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with germanium-doped GaN nanodiscs embedded between AlN barriers. The incorporation of germanium at concentrations above 10{sup 20}?cm{sup –3} shifts the photoluminescence emission energy of GaN nanodiscs to higher energies accompanied by a decrease of the photoluminescence decay time. At the same time, the thickness-dependent shift in emission energy is significantly reduced. In spite of the high donor concentration, a degradation of the photoluminescence properties is not observed.

Hille, P., E-mail: Pascal.Hille@physik.uni-giessen.de; Müßener, J.; Becker, P.; Teubert, J.; Schörmann, J.; Eickhoff, M. [I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen (Germany)] [I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen (Germany); Mata, M. de la [Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC, Campus de la UAB, 08193 Bellaterra, CAT (Spain)] [Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC, Campus de la UAB, 08193 Bellaterra, CAT (Spain); Rosemann, N.; Chatterjee, S. [Faculty of Physics and Materials Science Center, Philipps Universität Marburg, Renthof 5, 35032 Marburg (Germany)] [Faculty of Physics and Materials Science Center, Philipps Universität Marburg, Renthof 5, 35032 Marburg (Germany); Magén, C. [Laboratorio de Microscopías Avanzadas, Instituto de Nanociencia de Aragon-ARAID, Universidad de Zaragoza, 50018 Zaragoza (Spain)] [Laboratorio de Microscopías Avanzadas, Instituto de Nanociencia de Aragon-ARAID, Universidad de Zaragoza, 50018 Zaragoza (Spain); Arbiol, J. [Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC, Campus de la UAB, 08193 Bellaterra, CAT (Spain) [Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC, Campus de la UAB, 08193 Bellaterra, CAT (Spain); Institucio Catalana de Recerca i Estudis Avançats (ICREA), 08010 Barcelona, CAT (Spain)

2014-03-10T23:59:59.000Z

414

Truncation of Periodic Image Interactions for Confined Systems  

E-Print Network [OSTI]

First principles methods based on periodic boundary conditions are used extensively by materials theorists. However, applying these methods to systems with confined electronic states entails the use of large unit cells in order to avoid artificial image interactions. We present a general approach for truncating the Coulomb interaction that removes image effects directly and leads to well converged results for modest-sized periodic cells. As an illustration, we find the lowest-energy quasiparticle and exciton states in two-dimensional hexagonal GaN sheets. These sheets have been proposed as parent materials for single-walled GaN nanotubes which may be of interest for optoelectronics.

Sohrab Ismail-Beigi

2006-03-16T23:59:59.000Z

415

Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays  

DOE Patents [OSTI]

Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.

Rogers, John A; Nuzzo, Ralph; Kim, Hoon-sik; Brueckner, Eric; Park, Sang Il; Kim, Rak Hwan

2014-10-21T23:59:59.000Z

416

Searches for axioelectric effect of solar axions with BGO-scintillator and BGO-bolometer detectors  

E-Print Network [OSTI]

A search for axioelectric absorption of 5.5 MeV solar axions produced in the $p + d \\rightarrow {^3\\rm{He}}+\\gamma~(5.5~ \\rm{MeV})$ reaction has been performed with a BGO detectors. A model-independent limit on the product of axion-nucleon $g_{AN}^3$ and axion-electron $g_{Ae}$ coupling constants has been obtained: $| g_{Ae}\\times g_{AN}^3|< 1.9\\times 10^{-10}$ for 90\\% C.L..

Muratova, V N; Giorni, L; Nagorny, S S; Pattavina, L; Bakhlanov, S V; Beeman, J W; Bellini, F; Biassoni, M; Capelli, S; Clemenza, M; Dratchnev, I S; Ferri, E; Giachero, A; Gotti, C; Kayunov, A S; Maiano, C; Maino, M; Pavan, M; Pirro, S; Semenov, D A; Sisti, M; Unzhakov, E V

2015-01-01T23:59:59.000Z

417

Pyramidal Ownership in Ecuadorian Business Groups  

E-Print Network [OSTI]

OF PHILOSOPHY Approved by: Chair of Committee, Steven Wiggins Committee Members, Li Gan Steven Puller Laszlo Tihanyi Head of Department, Larry Oliver May 2009 Major Subject: Economics iii ABSTRACT Pyramidal Ownership in Ecuadorian Business Groups. (May 2009) Mar... as an economist but also, and mostly, in my formation as a person. I also recognize the helpful advice of all the members of my committee, Prof. Li Gan, Prof. Steve Puller and Prof. Laszlo Tihanyi. I appreciate the continuous support and trust of my sponsors...

Granda Kuffo, Maria L.

2010-01-16T23:59:59.000Z

418

Corrective Action Decision Document for Corrective Action Unit 230: Area 22 Sewage Lagoons and Corrective Action Unit 320: Area 22 Desert Rock Airport Strainer Box, Nevada Test Site, Nevada, Rev. 0  

SciTech Connect (OSTI)

This Corrective Action Decision Document identifies and rationalizes the U.S. Department of Energy, Nevada Operations Office's selection of a recommended corrective action alternative (CAA) appropriate to facilitate the closure of Corrective Action Unit (CAU) 230, Area 22 Sewage Lagoons, and CAU 320, Area 22 Desert Rock Airport Strainer Box, under the Federal Facility Agreement and Consent Order. Referred to as CAU 230/320, both CAUs are located at the Nevada Test Site (NTS) and comprise two Corrective Action Sites (CASs), 22-03-01 (Sewage Lagoons) and 22-99-01 (Strainer Box). The Area 22 Sewage Lagoons site also includes a buried Imhoff Tank, sludge bed, and associated sewer piping. A September 1999 corrective action investigation identified the only contaminant of concern above preliminary action levels at this CAU (i.e., total petroleum hydrocarbons as diesel-range organics). During this same investigation, three Corrective Action Objectives (CAOs) were identified to prevent or mitigate exposure to subsurface debris and contaminated soil. Based on these CAOs, a review of existing data, future use, and current operations in Area 22 of the NTS, three CAAs were developed for consideration: Alternative 1 - No Further Action, Alternative 2 - Closure in Place with Administrative Controls, and Alternative 3 - Excavation and Removal. These alternatives were evaluated based on four general corrective action standards and five remedy selection decision factors. Alternative 3 was chosen on technical merit as the preferred alternative for CAU 230/320. This alternative was judged to meet all applicable state and federal regulations for closure of the site and will eliminate potential future exposure pathways to the buried debris and contaminated soils at both of the CASs within Area 22.

U.S. Department of Energy, Nevada Operations Office

2000-04-20T23:59:59.000Z

419

Comparison of growth at six years of four native and three exotic timber species planted on abandoned pasture land in Costa Rica  

E-Print Network [OSTI]

into a new environment. As stated by Liang and Gan (1988), "species can perform in unexpected ways when introduced to new locations. " All one has to do is imagine the countryside in parts of the southeastern U. s. covered with the escaped kudzu vine...

Bir, John Andrew

1995-01-01T23:59:59.000Z

420

Multicolor, High Efficiency, Nanotextured LEDs  

SciTech Connect (OSTI)

We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and green for Solid State Lighting applications. Accomplishments in the duration of the contract period include (i) heteroepitaxy of nitrogen-polar LEDs on sapphire, (ii) heteroepitaxy of semipolar (11{bar 2}2) green LEDs on sapphire, (iii) synthesis of quantum-dot loaded nanoporous GaN that emits white light without phosphor conversion, (iv) demonstration of the highest quality semipolar (11{bar 2}2) GaN on sapphire using orientation-controlled epitaxy, (v) synthesis of nanoscale GaN and InGaN medium, and (vi) development of a novel liftoff process for manufacturing GaN thin-film vertical LEDs. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

Jung Han; Arto Nurmikko

2011-09-30T23:59:59.000Z

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

BLOCK COMPRESSED SENSING OF NATURAL IMAGES Dept. of Electrical Engineering and Electronics,  

E-Print Network [OSTI]

imaging systems, natural images are often first sam- pled into the digital format at a higher rateBLOCK COMPRESSED SENSING OF NATURAL IMAGES Lu Gan Dept. of Electrical Engineering and Electronics for natural images, where image acquisi- tion is conducted in a block-by-block manner through the same oper

422

16Research Excellence Accomplishments by University Professors Dr. Noyori and Dr. Akasaki  

E-Print Network [OSTI]

of GaN blue-light-emitting diode is a successful example of Industry-Academia-Government cooperation. Dr al. realized their dreams. University Professor Isamu Akasaki and Blue-Light-emitting Diodes revolutionized the field of semiconductor research. Blue-light-emitting diodes (LEDs) can be utilized in a wide

Takahashi, Ryo

423

Intraseasonal variability in sea surface height over the South Wei Zhuang,1  

E-Print Network [OSTI]

: Zhuang, W., S.P. Xie, D. Wang, B. Taguchi, H. Aiki, and H. Sasaki (2010), Intraseasonal variability through baroclinic Rossby waves [Z. Liu et al., 2001; Gan et al., 2006]. In the NSCS, the circulation Niño and Southern Oscillation (ENSO) [Xie et al., 2003; Liu et al., 2004; Wu and Chang, 2005; Fang et

Xie, Shang-Ping

424

IEEE TRANSACTIONS ON POWER SYSTEMS, VOL. 15, NO. 2, MAY 2000 535 Stability-Constrained Optimal Power Flow  

E-Print Network [OSTI]

Power Flow Deqiang Gan, Member, IEEE, Robert J. Thomas, Fellow, IEEE, and Ray D. Zimmerman, Member, IEEE in the context of a 162-bus system. Index Terms--Power System, Transient Stability, Optimal Power Flow, Numerical, they do provide for a simple mapping between controllable generation dispatch and indices

425

Student No. NAME CLASS Project Title Project Teacher DEPT Remarks 2012563535 Adiputra Calvin EComE Study of digital fingerprinting techniques Dr. T.I. Yuk EEE  

E-Print Network [OSTI]

Chun Hin EE High efficiency battery bank with GaN devices Dr. M.H. Pong EEE 2010545280 Lam Kai Chun Ho EE Parallel Computing of Load Flow Analysis on OpenCL Dr. C.K. Lee EEE 3035023661 Chen Yibo ECom

Leung, Ka-Cheong

426

Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition  

E-Print Network [OSTI]

Seebeck coefficient and resistance measurement system for thermoelectric materials in the thin diskInN alloy on GaN as excellent material candidate for thermoelectric application. © 2010 American Institute-nitride alloys have shown promising results for thermoelectric applications,20­30 in particular for materi- als

Gilchrist, James F.

427

Temperature Driven Diet Quality Prediction for Free-Ranging Cattle  

E-Print Network [OSTI]

modeled. The validation study revealed good correlation between predicted diet quality and observed diet quality (r2=0.84). The Grazing Animal Nutrition lab (GAN lab) commercial fecal NIRS analyzing data for Major Land Resource Area 42 (MLRA 42) was used...

Zhang, Yingjie

2009-05-15T23:59:59.000Z

428

Science in China Series D: Earth Sciences 2008 SCIENCE IN CHINA PRESS  

E-Print Network [OSTI]

deep burial and maintained high hydrocarbon generating potential even in over-matured source rock and their significance for the assessment of hydrocarbon source rock DONG Jin1 , ZHANG ShiHong1 , JIANG GanQing2 , ZHAO concretion, sedimentary environment, hydrocarbon source rock Abundant carbonate concretions are distributed

Jiang, Ganqing

429

670 IEEE ELECTRON DEVICE LETTERS, VOL. 33, NO. 5, MAY 2012 Breakdown-Voltage-Enhancement Technique for  

E-Print Network [OSTI]

670 IEEE ELECTRON DEVICE LETTERS, VOL. 33, NO. 5, MAY 2012 Breakdown-Voltage-Enhancement Technique (FP), GaN power devices, leakage current. I. INTRODUCTION AlGaN/GaN high-electron-mobility transistors Devices, University of Electronic Science and Technology of China, Chengdu 610054, China. E. Xu, J. Lee, N

Ng, Wai Tung

430

Strong light-matter coupling in bulk GaN-microcavities with double dielectric mirrors fabricated by two different methods  

SciTech Connect (OSTI)

Two routes for the fabrication of bulk GaN microcavities embedded between two dielectric mirrors are described, and the optical properties of the microcavities thus obtained are compared. In both cases, the GaN active layer is grown by molecular beam epitaxy on (111) Si, allowing use of selective etching to remove the substrate. In the first case, a three period Al{sub 0.2}Ga{sub 0.8}N/AlN Bragg mirror followed by a {lambda}/2 GaN cavity are grown directly on the Si. In the second case, a crack-free 2 {mu}m thick GaN layer is grown, and progressively thinned to a final thickness of {lambda}. Both devices work in the strong coupling regime at low temperature, as evidenced by angle-dependent reflectivity or transmission experiments. However, strong light-matter coupling in emission at room temperature is observed only for the second one. This is related to the poor optoelectronic quality of the active layer of the first device, due to its growth only 250 nm above the Si substrate and its related high defect density. The reflectivity spectra of the microcavities are well accounted for by using transfer matrix calculations.

Reveret, F.; Disseix, P.; Vasson, A.; Leymarie, J. [Clermont Universite, Universite Blaise Pascal, LASMEA, BP 10448, F-63000 Clermont-Ferrand (France); CNRS, UMR 6602, LASMEA, F-63177 Aubiere (France); Bejtka, K. [CRHEA-CNRS, Rue Bernard Gregory, Parc Sophia Antipolis, 06560 Valbonne (France); Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom); Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom); Chenot, S.; Sellers, I. R.; Duboz, J. Y.; Leroux, M.; Semond, F. [CRHEA-CNRS, Rue Bernard Gregory, Parc Sophia Antipolis, 06560 Valbonne (France)

2010-08-15T23:59:59.000Z

431

Wide Bandgap Semiconductors for Power Electronics, Optoelectronics, and Advanced Communications  

E-Print Network [OSTI]

Wide Bandgap Semiconductors for Power Electronics, Optoelectronics, and Advanced Communications with material composition over a range of 0.7 to 5 eV. This factor allows them to be used for optoelectronic. Improvement in growth quality and doping of GaN is needed to improve the performance of optoelectronics

Li, Mo

432

Seeded growth of AlN bulk crystals in m-and c-orientation , R. Collazo a,, R.F. Dalmau b  

E-Print Network [OSTI]

. Introduction Single crystal AlN is a promising substrate for nitride-based optoelectronic devices exploiting efficiency of optoelectronic devices [8]. Second, AlN and GaN have different valence band structures caused in higher luminous efficiency of deep UV optoelectronic devices. Although the growth of III-nitride thin

Dietz, Nikolaus

433

Spontaneous emission in GaN/InGaN photonic crystal nanopillars  

E-Print Network [OSTI]

. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

Boyer, Edmond

434

Systemic Signalling in Plant Development  

E-Print Network [OSTI]

develop continuously throughout their life cycle, constantly initiating new or- gans. They doSystemic Signalling in Plant Development David Jackson, Cold Spring Harbor Laboratory, Cold Spring to the production of systemic signals that control the development of distant organs and tissues. Introduction

Jackson, David

435

David Patel, Ishiang Shih Department of Electrical Engineering, McGill University , QC, Canada  

E-Print Network [OSTI]

David Patel, Ishiang Shih Department of Electrical Engineering, McGill University , QC, Canada electrical consumption. [2] GaN Material Properties ·Wurtzite structure oNo inversion symmetry oEach element operations oReported up to ~500oC ·Lower mobility vs. GaAs oDue to higher alloy scattering in nitrides. o

Barthelat, Francois

436

Science in China Series D: Earth Sciences 2008 SCIENCE IN CHINA PRESS  

E-Print Network [OSTI]

Science in China Series D: Earth Sciences © 2008 SCIENCE IN CHINA PRESS Springer www Doushantuo basin in South China JIANG GanQing1 , ZHANG ShiHong2,3 , SHI XiaoYing2,3 & WANG XinQiang1,2 1 and Resources, China University of Geosciences, Beijing 100083, China; 3 State Key Laboratory of Geological

Jiang, Ganqing

437

Optimal Decentralized Protocols for Electric Vehicle Charging  

E-Print Network [OSTI]

1 Optimal Decentralized Protocols for Electric Vehicle Charging Lingwen Gan Ufuk Topcu Steven Low Abstract--We propose decentralized algorithms for optimally scheduling electric vehicle (EV) charging. The algorithms exploit the elasticity and controllability of electric vehicle loads in order to fill the valleys

Low, Steven H.

438

Paul Sellin, Centre for Nuclear and Radiation Physics Recent developments in compound  

E-Print Network [OSTI]

in large-area thick film materials: Y polycrystalline and epitaxial CdZnTe/CdTe thick films Y Heavy element materials: Y CdMnTe Y GaN Y Synthetic diamond r Conclusion #12;Paul Sellin, Centre for Nuclear and Radiation-grain polycrystalline, with improved single-crystal yield r Reduced concentration of twins r Secondary grain nucleation

Sellin, Paul

439

Diffusion, Uptake and Release of Hydrogen in p-type Gallium Nitride: Theory and Experiment  

SciTech Connect (OSTI)

The diffusion, uptake, and release of H in p-type GaN are modeled employing state energies from density-function theory and compared with measurements of deuterium uptake and release using nuclear-reaction analysis. Good semiquantitative agreement is found when account is taken of a surface permeation barrier.

MYERS JR.,SAMUEL M.; WRIGHT,ALAN F.; PETERSEN,GARY A.; WAMPLER,WILLIAM R.; SEAGER,CARLETON H.; CRAWFORD,MARY H.; HAN,JUNG

2000-06-27T23:59:59.000Z

440

Characterization and Modeling of Silicon Carbide Power Devices and Paralleling Operation  

E-Print Network [OSTI]

Characterization and Modeling of Silicon Carbide Power Devices and Paralleling Operation Yutian Cui silicon carbide (SiC) power devices. The devices have been tested for both static and dynamic like silicon carbide (SiC) and gallium nitride (GaN) are becoming more attractive. SiC power devices

Tolbert, Leon M.

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

It has been hot! In some places in Tennessee this summer, records have been set for "hot weather." According to the Weather Service in Morristown, there has been 59 days of tempera-  

E-Print Network [OSTI]

degrees. The high temperature during the days and the nights above 70, this is tough on cattle. They have water is needed to cool the cattle's internal or- gans. Internal temperature will have an impact on feed and especially, forage intake. Water from ponds will be elevated in temperature and therefore will be reduced

Tennessee, University of

442

MOVPE growth of semipolar III-nitride semiconductors on CVD graphene Priti Gupta n  

E-Print Network [OSTI]

MOVPE growth of semipolar III-nitride semiconductors on CVD graphene Priti Gupta n , A.A. Rahman pressure metalorganic vapor phase epitaxy B1. Graphene B1. Nitrides B2. Semiconducting III­V materials a b on graphene grown by chemical vapour deposition. GaN, AlGaN alloys, and InN layers are grown using an Al

Deshmukh, Mandar M.

443

Fouille vido oriente objet, une approche gnrique Jonathan Weber  

E-Print Network [OSTI]

Fouille vidéo orientée objet, une approche générique Jonathan Weber , Sébastien Lefèvre Pierre Gançarski Université de Strasbourg j.weber@unistra.fr,gancarski@unistra.fr https

Boyer, Edmond

444

Business surveys modelling with Seasonal-Cyclical Long Memory models  

E-Print Network [OSTI]

Business surveys modelling with Seasonal-Cyclical Long Memory models Ferrara L. and Guégan D. 2nd business surveys released by the European Commission. We introduce an innovative way for modelling those linear models. Keywords: Euro area, nowcasting, business surveys, seasonal, long memory. JEL

Paris-Sud XI, Université de

445

Air pollution sources apportionment in a French urban site Marie Chavent*  

E-Print Network [OSTI]

preoccupation for human health. In order to achieve this purpose, air pollution sources have to be accuratelyAir pollution sources apportionment in a French urban site Marie Chavent* , Hervé Guégan sources of fine particulate emission. Key-words: air pollution data, Principal Component Analysis (PCA

Paris-Sud XI, Université de

446

What's happening with the World Digital  

E-Print Network [OSTI]

, Institut Fourier, France · Olga Caprotti, Chalmers University, Sweden · James Davenport, University of Bath Doob: New hardware/software and some implications for smaller digital libraries Joshua Gans: Decoupling is a golden rule - not only for software architecture Jim Pitman: Collected and Selected Works Ulf

Keel, Markus

447

numero d'ordre : 3819 pour l'obtention du Grade de  

E-Print Network [OSTI]

+ x + x2 = 3yq . . . . . . . . . . . . . . . . . . . . . . . . 28 2 Th´eor`emes de factorisation, th´eor`eme de Steiner, th´eor`emes de Gan- noukh, application diophantienne 31 2.0.1 Quelques lemmes pr´eliminaires. . . . . . . . . . . . . . . . . . . . . 31 2.0.2 Premi`ere factorisation. . . . . . . . . . . . . . . . . . . . . . . . . . 32 2.0.3 Un th´eor

Paris-Sud XI, Université de

448

More Efficient Power Conversion for EVs: Gallium-Nitride Advanced Power Semiconductor and Packaging  

SciTech Connect (OSTI)

Broad Funding Opportunity Announcement Project: Delphi is developing power converters that are smaller and more energy efficient, reliable, and cost-effective than current power converters. Power converters rely on power transistors which act like a very precisely controlled on-off switch, controlling the electrical energy flowing through an electrical circuit. Most power transistors today use silicon (Si) semiconductors. However, Delphi is using semiconductors made with a thin layer of gallium-nitride (GaN) applied on top of the more conventional Si material. The GaN layer increases the energy efficiency of the power transistor and also enables the transistor to operate at much higher temperatures, voltages, and power-density levels compared to its Si counterpart. Delphi is packaging these high-performance GaN semiconductors with advanced electrical connections and a cooling system that extracts waste heat from both sides of the device to further increase the device’s efficiency and allow more electrical current to flow through it. When combined with other electronic components on a circuit board, Delphi’s GaN power transistor package will help improve the overall performance and cost-effectiveness of HEVs and EVs.

None

2010-02-01T23:59:59.000Z

449

Determination of an Amazon Hot Reference Target for the On-Orbit Calibration of Microwave Radiometers  

E-Print Network [OSTI]

, University of Michigan, Ann Arbor, Michigan (Manuscript received 12 May 2004, in final form 14 January 2005-surface winds, ocean surface roughness, sea ice concentration, land surface vegetation and soil mois- ture, Corresponding author address: Chris Ruf, University of Michi- gan, 2455 Hayward St., Ann Arbor, MI 48109-2143. E

Ruf, Christopher

450

Standards for Power Electronic Components  

E-Print Network [OSTI]

Standards for Power Electronic Components and Systems EPE 14 ECCE Europe Dr Peter R. Wilson #12;Session Outline · "Standards for Power Electronic Components and Systems" ­ Peter Wilson, IEEE PELS Electronics ­ where next? · Wide Band Gap Devices ­ SiC, GaN etc... · Transformers (ETTT) · Power Modules

451

THE SYSTEM OF POWER SUPPLIES, CONTROL AND MODULATION OF ELECTRON GUN FOR FREE ELECTRON LASER  

E-Print Network [OSTI]

end components: GaN JFET transistors, 1GHz fiber optic link and RF micro strip transformers. The output of power inverter is connected to input coil of isolated power transformer (300kV). Timer Electric power for part 2 goes from power inverter through isolated power transformer (isolation voltage

Kozak, Victor R.

452

Gallium nitride junction field-effect transistor  

DOE Patents [OSTI]

An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

Zolper, John C. (Albuquerque, NM); Shul, Randy J. (Albuquerque, NM)

1999-01-01T23:59:59.000Z

453

ATLAS ATLAS ATLAS ATLAS  

E-Print Network [OSTI]

for fibres ffl base \\Pi deposit gold traces for wire bonding, VCSEL and PIN placement February 4, 2000 ATLASATLAS ATLAS ATLAS ATLAS Status of Alternative Optical Package R&D K.K. Gan Ohio State University February 4, 2000 ATLAS Pixel Week Outline of Talk ffl Introduction ffl Status ffl Plans February 4, 2000

Gan, K. K.

454

ATLAS ATLAS ATLAS ATLAS  

E-Print Network [OSTI]

\\Pi deposit gold traces for wire bonding, VCSEL and PIN placements June 13, 2000 ATLAS Pixel WeekATLAS ATLAS ATLAS ATLAS Status of Alternative Optical Package R&D K.K. Gan Ohio State University June 13, 2000 ATLAS Pixel Week Outline of Talk ffl Introduction ffl Status ffl Plan June 13, 2000 ATLAS

Gan, K. K.

455

ATLAS ATLAS ATLAS ATLAS  

E-Print Network [OSTI]

for fibres ffl base \\Pi deposit gold traces for wire bonding, VCSEL and PIN placement December 1, 1999 ATLAS ATLAS ATLAS ATLAS Plan ffl use Hybrid Tek to fabricate bases with alumina and deposit thin gold tracesATLAS ATLAS ATLAS ATLAS Status of Alternative Optical Package R&D K.K. Gan Ohio State University

Gan, K. K.

456

ATLAS ATLAS ATLAS ATLAS  

E-Print Network [OSTI]

ATLAS ATLAS ATLAS ATLAS Status of Alternative Optical Package R&D K.K. Gan Ohio State University September 22, 1999 ATLAS Week Outline of Talk ffl SCT optical package ffl Alternative optical package ffl Status ffl Plans September 22, 1999 ATLAS Week Status of Alternative Optical Package R&D (page 1) K

Gan, K. K.

457

ATLAS ATLAS ATLAS ATLAS  

E-Print Network [OSTI]

ATLAS ATLAS ATLAS ATLAS Status of DORIC Test System K.K. Gan Ohio State University November 29, 1999 ATLAS Pixel Week Outline of Talk ffl Introduction ffl Fixed Data Pattern Testing ffl Pseudo­random Data Pattern Testing ffl Quick Look of DORIC­P November 29, 1999 ATLAS Pixel Week Status of DORIC Test

Gan, K. K.

458

ATLAS Upgrade Week 1 November 11, 2009  

E-Print Network [OSTI]

ATLAS Upgrade Week 1 November 11, 2009 Proposal to Develop On-Detector Array-based Optical Link A. Maettig Universität Wuppertal K.K. Gan A. Pellegrino, T. Sluijk NIKHEF (LHCb) #12;ATLAS Upgrade Week 2;ATLAS Upgrade Week 3 Introduction VCSEL and PIN are available in three forms: single channel or 4

Gan, K. K.

459

The Mount Perkins block, northwestern Arizona: An exposed cross section of an evolving, preextensional to synextensional magmatic system  

E-Print Network [OSTI]

,  Daniel L. Feuerbach, 1 Mark K. Reagan, 1 Rodney V. Metcalf, 2 Phil Gans, 3 and J. D. Walker 4 Abstract. The steeply tilted Mount Perkins block, northwestern Arizona, exposes a cross section of a magmatic system that evolved through the onset...

Faulds, James E.; Feuerbach, Daniel L.; Reagan, Mark K.; Metcalf, Rodney V.; Gans, Phil; Walker, J. Douglas

1995-08-10T23:59:59.000Z

460

Observation of photoluminescence from Al1 xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy  

E-Print Network [OSTI]

Observation of photoluminescence from Al1 xInxN heteroepitaxial films grown by metalorganic vapor have observed photoluminescence of Al1 xInxN films. The films were grown on GaN by atmospheric pressure-temperature deposited AlN buffer layer. Photoluminescence, absorption, and x-ray diffraction measurements have shown

Wetzel, Christian M.

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

IBL General Meeting 1 November 6, 2009  

E-Print Network [OSTI]

Meeting 4 AOC 10 Gb/s VCSEL irradiation annealing w/o long twisted/ coiled fiber Good optical power;IBL General Meeting 11 Summary AOC 10 Gb/s arrays have good optical power after irradiation hardness of VCSELs Summary K.K. Gan #12;IBL General Meeting 3 850 nm VCSEL Irradiation 2006-7: !~2

Gan, K. K.

462

TWEPP09 1 September 24, 2009  

E-Print Network [OSTI]

/o long twisted/ coiled fiber Good optical power for 6 arrays irradiated await return of arrays 10 Gb/s arrays have good optical power after irradiation VCSEL produces more power at room scales with Non-Ionizing Energy Loss (NIEL) K.K. Gan #12;TWEPP09 4 850 nm VCSEL Irradiation 2006

Gan, K. K.

463

https://edms.cern.ch/document/882783/2.6 Joint ATLAS/CMS NOTE Joint ATLAS-CMS working group on  

E-Print Network [OSTI]

on optoelectronics for SLHC Report from sub-group B Optical System Irradiation Guidelines K.K. Gan Department, ATLAS Pixel, ATLAS LAr and CMS tracker optical link designers. This document summarizes the agreement on irradiation guidelines for the optoelectronic systems at the SLHC. It covers lasers, p-i-n diodes, fibres, LLD

Ye, Jingbo

464

October 2, 2009 Radiation-Hardness of VCSEL/PIN  

E-Print Network [OSTI]

#12;RD09 6 AOC 10 Gb/s VCSEL irradiation annealing 145 µW w/o long twisted/ coiled fiber Good optical power for 6 arrays irradiated await return of arrays to Ohio State for annealing arrays K.K. Gan #12;RD09 13 Summary AOC 10 Gb/s arrays have good optical power after irradiation

Gan, K. K.

465

2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim p s scurrent topics in solid state physics  

E-Print Network [OSTI]

directing elements for light emitting devices. Many recent activities in the NSAG field have focused on Ga. Comparison of the stress properties between the nanodots, nanostripes, and continu- ous GaN film grown by metal organic vapor phase epitaxy. By varying the growth reactor pressure, we have been able to grow

Sirenko, Andrei

466

Stochastic Distributed Protocol for Electric Vehicle Charging with Discrete Charging Rate  

E-Print Network [OSTI]

including those in the integration into the electric power grid. For example, EV charging potentially studies demonstrate that adopting "smart" charging strategies can mitigate some of the integration Gan, Ufuk Topcu, Member, IEEE, and Steven H. Low, Fellow, IEEE Abstract--To address the grid

Winfree, Erik

467

Protocols for BoundedConcurrent Secure TwoParty Computation in the Plain Model  

E-Print Network [OSTI]

Protocols for Bounded­Concurrent Secure Two­Party Computation in the Plain Model Yehuda Lindell # Department of Computer Science Bar­Ilan University Ramat Gan, 52900, Israel lindell@cs.biu.ac.il September 26­composition, in the plain model (where the only setup assumption made is that the parties communicate via authenticated

Lindell, Yehuda

468

Proc. Natl. Acad. Sci. USA Vol. 94, pp. 76127616, July 1997  

E-Print Network [OSTI]

-Gan, 52900 Israel Communicated by Herman Z. Cummins, City College of the City University of New York, New with characteristic pore sizes. We interpret plaque morphology in the context of a new dynamical model based on competing aggregation and disaggregation processes in ki- netic steady-state equilibrium with an additional

Stanley, H. Eugene

469

Kursplan fr lsret 2008/2009 (Genererad 2008-07-17.)  

E-Print Network [OSTI]

Design Project A Antal högskolepoäng: 4. Betygskala: TH. Nivå: G1 (Grundnivå). Undervisningsspråk: Kursen. Studenterna får sedan i ett flertal korta övningsuppgifter möjlighet att utvecklaq förmågan att föra en idé

470

High efficiency light emitting diode with anisotropically etched GaN-sapphire interface  

E-Print Network [OSTI]

High efficiency light emitting diode with anisotropically etched GaN- sapphire interface M. H. Lo and optimization of a light-emitting diode projection micro-stereolithography three-dimensional manufacturingGaN micro-light emitting diodes Appl. Phys. Lett. 101, 231110 (2012) A bright cadmium-free, hybrid organic

471

Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting  

E-Print Network [OSTI]

of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

Wetzel, Christian M.

472

Benchmark Problem: A PK/PD Model and Safety Constraints for Anesthesia Delivery  

E-Print Network [OSTI]

Benchmark Problem: A PK/PD Model and Safety Constraints for Anesthesia Delivery Victor Gan, Guy A of the goals of general anesthesia. In this brief paper we provide a differential equation model of how Introduction General anesthesia is a broad term encompassing the use of drugs to induce and maintain three

Mitchell, Ian

473

emphasizes the beneficial effects of the open architecture and surface compositional profile of  

E-Print Network [OSTI]

for the structural evolution of a bimetallic nanostructure from solid polyhedra to hollow highly crystalline. J. Zhang, H. Yang, J. Fang, S. Zou, Nano Lett. 10, 638­644 (2010). 12. C. Cui, L. Gan, M. Heggen, S. Rudi, P. Strasser, Nat. Mater. 12, 765­771 (2013). 13. S.-I. Choi et al., Nano Lett. 13, 3420

Napp, Nils

474

Faculty Arts & Social Sciences Bachelor of Arts  

E-Print Network [OSTI]

North Delta Sr. Sec. BC Bachelor of Arts Gan, Jocelyn Ye Ying Major English & Minor Communication North Delta Sr. Sec. BC Bachelor of Arts Green, Jonathan Randall Clark Major Political Science Seaquam BC #12;Faculty of Cmns, Art & Tech Bachelor of Arts Anaka, Lauren Marissa Major Communication Delta

475

INCOSE 2007 1 Lessons Learned From  

E-Print Network [OSTI]

INCOSE 2007 1 Lessons Learned From Industrial Validation of COSYSMO 17th INCOSE Symposium Dr. Gan is not standardized · Model development process yielded 11 lessons learned Valerdi, R., Rieff, J., Roedler, G., Wheaton, M., Lessons Learned from Collecting Systems Engineering Data, Conference on Systems Engineering

de Weck, Olivier L.

476

Towards DRAGON Version4 Institut de genie nucleaire  

E-Print Network [OSTI]

Version4 is a new distribution of the reactor physics computer codes at GAN. Its components are: DRAGR module in NJOY and Python script PyNjoy.py Ganlib tools (CLE-2000, LCM/XSM API) Modules (calculation operators) of the following codes: Dragon: lattice code Trivac: reactor (full core) code Donjon: simulation

Meunier, Michel

477

Wide Bandgap Materials  

Broader source: Energy.gov (indexed) [DOE]

Program Targets WBG devices maybe the enabling technology to meet the VTP inverter targets: - 13.4 kWl, 3.3 kW and 14.1 kWkg * Industrial suppliers of SiC and GaN...

478

Radiation-Hard ASICs for LHC Optical Data Transmission  

E-Print Network [OSTI]

Radiation-Hard ASICs for LHC Optical Data Transmission K.K. Gan, H.P. Kagan, R.D. Kass, J.R. Moore damage. We have designed three ASICs for possible applications in the optical links for the new pixel, D.S. Smith Abstract­We have designed three ASICs for possible applications in the optical links

Gan, K. K.

479

Suppression of thermal conductivity in InxGa12xN alloys by nanometer-scale disorder  

E-Print Network [OSTI]

power requires low lattice thermal conductivity while maintaining high mobility of the charge carriers. The binary InN and GaN materials have high ther- mal conductivity materials9­14 (the room-temperature thermalSuppression of thermal conductivity in InxGa12xN alloys by nanometer-scale disorder T. Tong,1,a) D

Wu, Junqiao

480

World Review of Intermodal Transportation Research, Vol. 4, No. 1, 2013 23 Copyright 2013 Inderscience Enterprises Ltd.  

E-Print Network [OSTI]

-ray device for tyre inspection can be found at the very old date of 1939 (Capen et al., 1939). Some other damaged tyres Yair Wiseman Computer Science Department, Bar-Ilan University, Ramat-Gan 52900, Israel E-mail: wiseman@cs.huji.ac.il Abstract: Many people die each year in car accidents because of damaged tyres

Wiseman, Yair

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
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481

436 IEEE/ASME TRANSACTIONS ON MECHATRONICS, VOL. 9, NO. 2, JUNE 2004 Torque and Velocity Ripple Elimination of AC  

E-Print Network [OSTI]

Elimination of AC Permanent Magnet Motor Control Systems Using the Internal Model Principle Wai-Chuen Gan and velocity ripple elimination in AC permanent magnet (PM) motor control systems. The torque ripples caused-free output response. Index Terms--AC permanent magnet motor, gain scheduled (GS) speed regulators, internal

Qiu, Li

482

Acoustic-phonon propagation in rectangular semiconductor nanowires with elastically dissimilar barriers  

E-Print Network [OSTI]

Engineering, University of California--Riverside, Riverside, California 92521, USA Received 15 February 2005 dissimilar materials. As example systems, we have considered GaN nanowires with AlN and plastic barrier­5 The modification of the acoustic phonon dispersion in semiconductor superlattices has been mostly studied, both

483

IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 42, NO. 5, MAY 2006 477 Tapping Light From Waveguides by High-Order  

E-Print Network [OSTI]

and I. Vorobeichik are with Optun Inc., Santa Clara, CA 95054 USA (e-mail: Romanas facet or em- bedded in the chip itself [4]. In many cases, the required tapping ratio is in the order USA (e-mail: enarevicius@yahoo.com). G. Rosenblum is with TransChip-Israel Research Center, Ramat Gan

Narevicius, Edvardas

484

How Does the Republic of Science Shape the Patent System? Broadening the  

E-Print Network [OSTI]

357 How Does the Republic of Science Shape the Patent System? Broadening the Institutional Analysis of Innovation Beyond Patents Fiona E. Murray,* Joshua S. Gans,** and Mackey L. Craven*** I. The Republic. Intertwined Relationship Between the Patent System & the Republic of Science

Loudon, Catherine

485

CX-010973: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory

486

CX-011468: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Advanced Low-Cost Silicon-Carbide (SiC) and Gallium-Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 10/29/2013 Location(s): Michigan Offices(s): National Energy Technology Laboratory

487

CX-010974: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory

488

Seeding date and polymer seed coating effects on plant establishment and yield of fall-seeded  

E-Print Network [OSTI]

-seeded canola in the Northern Great Plains E. N. Johnson1, P. R. Miller2, R. E. Blackshaw3, Y. Gan4, K. N of fall-seeded canola in the Northern Great Plains. Can. J. Plant Sci. 84: 955­963. The time interval for planting fall-seeded Brassica napus L. canola in the Northern Great Plains is narrow, since seeding must

Lawrence, Rick L.

489

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate  

SciTech Connect (OSTI)

The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical measurements, a gradual decrease of two-dimensional electron gas (2DEG) concentration near heterointerface as the function of NL thickness is observed possibly due to the reduction in difference of piezoelectric polarization charge densities between AlGaN and GaN layers. It also indicates that the minimum tensile stress and a relatively less total dislocation density for high pressure grown NL can ensure a 20 % increment in mobility at room temperature irrespective of the interface roughness. The thickness and pressure variations in NL and the subsequent changes in growth mode of AlN contributing to the post growth residual tensile stress are investigated using X-ray diffraction and Raman scattering experiments, respectively. The post growth intrinsic residual stress in top layers of heterostructures arises from lattice mismatches, NL parameters and defect densities in GaN. Hence, efforts to reduce the intrinsic residual stress in current conducting GaN layer give an opportunity to further improve the electrical characteristics of AlGaN/GaN device structures on Si.

Christy, Dennis; Watanabe, Arata; Egawa, Takashi [Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya, 466-8555 (Japan)

2014-10-15T23:59:59.000Z

490

Bottoms Up  

E-Print Network [OSTI]

Broadcast Transcript: "Bottoms up!" Or, "gan bei," as they say here in China. But what are you drinking? It could either be the authentic 144-proof sorghum-based liquor Moutai, or a clever counterfeit. Moutai has been dubbed the "national wine...

Hacker, Randi; Boyd, David

2011-03-30T23:59:59.000Z

491

JOURNAL OF BIOLOGICAL RHYTHMS, Vol. 22 No. 6, December 2007 558-561 DOI: 10.1177/0748730407308285  

E-Print Network [OSTI]

been found in horizontal and/or gan- glion cells in teleost fish, includ- ing zebrafish, roach found in Atlantic salmon (Soni and Foster, 1997) and subsequently in zebrafish, carp, smelt, and roach, may also con- tribute to circadian entrainment in teleosts. In roach, one type of hori- zontal cell

Fernald, Russell

492

08/06 Ver. 2.1 Sushil Atreya Professor  

E-Print Network [OSTI]

for Research on Oxidants: Photochemistry, Emissions & Transport · Solar and Heliospheric Physics · Spaceborne of satellite-platform instruments for observation of the earth-atmosphere-ocean system. the michiGan diFFerence As part of the University of Michigan College of Engineering, AOSS offers high-quality academic science

Eustice, Ryan

493

Documents de Travail du Centre d'Economie de la Sorbonne  

E-Print Network [OSTI]

Forecasting electricity spot market prices with a k-factor GIGARCH process Abdou Kâ DIONGUE, Dominique GUEGAN market prices with a k-factor GIGARCH process. Abdou Kâ Diongue , Dominique Guégan , Bertrand Vignal QLD 4001 Australia, e-mail: abdou.diongue@gmail.com Paris School of economics, CES-MSE, Université

Boyer, Edmond

494

HYDROGEN LOCAL VIBRATIONAL MODES IN COMPOUND SEMICONDUCTORS  

E-Print Network [OSTI]

HYDROGEN LOCAL VIBRATIONAL MODES IN COMPOUND SEMICONDUCTORS M.D. MCCLUSKEY* University) spectroscopy of hydrogen and deuterium in GaP, AlSb, ZnSe, and GaN has provided important information about the structures of dopant- hydrogen complexes and their interaction with the host lattice. In GaN:Mg, for example

McCluskey, Matthew

495

An Integrated Symbolic and Neural Network Architecture for Machine Learning in the Domain of Nuclear Engineering  

E-Print Network [OSTI]

of Nuclear Engineering Ephraim Nissan Hava Siegelmann Alex Galperin Mathematics Industrial Engineering Nuclear Engineering Bar-Ilan University Technion Ben-Gurion University Ramat-Gan, Israel Haifa, Israel, respectively, expert systems for engineering, and neural networks, we have defined and designed a new phase

Siegelmann , Hava T

496

CX-009000: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

"High Quality, Low Cost Bulk Gallium Nitride (GaN) Substrates Grown by the Electrochemical Solution Growth Method CX(s) Applied: A9, B3.6 Date: 08/20/2012 Location(s): Missouri Offices(s): Golden Field Office"

497

Essays on airport and airway congestion  

E-Print Network [OSTI]

Runway and airspace congestion are the primary causes of flight delays in the US. These delays cost airlines and airline customers billions of dollars per year. This thesis consists of two essays. The first essay focuses ...

Schorr, Raphael Avram, 1976-

2006-01-01T23:59:59.000Z

498

Airport ATC Communications: Procedures and Phraseology  

E-Print Network [OSTI]

and Verbal · Miss-communication could lead to accident · English is International Standard ­ International Civil Aviation Organization (ICAO) #12;2 Radio Communication · Simplex (two-way communication on one frequency) · Radio Frequencies assigned International agreements ­ High Frequency » Long-range communication

499

Airports & Lodging | Savannah River Ecology Laboratory  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation InInformationCenterResearch Highlights MediaFuelAbout UsAdvisory Panels SSRLAirports and

500

Geothermal Energy at Oslo Airport Gardermoen.  

E-Print Network [OSTI]

?? Rock Energy is a Norwegian company with a patented solution for drilling deep geothermal wells, for exploitation of deep geothermal energy from Hot Dry… (more)

Huuse, Karine Valle

2012-01-01T23:59:59.000Z