Powered by Deep Web Technologies
Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

GaN High Power Devices  

SciTech Connect (OSTI)

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

2

P-type doping of GaN  

SciTech Connect (OSTI)

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

Wong, R.K.

2000-04-10T23:59:59.000Z

3

Atomic-Level Study of Melting Behavior of GaN Nanotubes. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Melting Behavior of GaN Nanotubes. Atomic-Level Study of Melting Behavior of GaN Nanotubes. Abstract: Molecular dynamics simulations with a Stillinger-Weber potential have been...

4

E-Print Network 3.0 - aln gan inn Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: size. Introduction GaN and its alloys with InN and AlN have been used for optoelectronic devices... region. The formation of self-assembled GaN nanostructures on aluminum...

5

K.K. Gan EPS 2001 1 New Results on Charm  

E-Print Network [OSTI]

K.K. Gan EPS 2001 1 New Results on Charm Semileptonic Decays and Lifetime K.K. Gan The Ohio State University July 14, 2001 Representing CLEO Collaboration #12;K.K. Gan EPS 2001 2 l measurement of l first+ B(D+ K* 0 l+ l ) (D*+ ) c + #12;K.K. Gan EPS 2001 3 l P measurement of form factors helps to guide

Gan, K. K.

6

Joint ATLAS/CMS SLHC Opto WG 1 K.K. Gan Lesson Learned from  

E-Print Network [OSTI]

Joint ATLAS/CMS SLHC Opto WG 1 K.K. Gan Lesson Learned from ATLAS Pixel Optical Link #12;Joint ATLAS/CMS SLHC Opto WG 2 Outline Introduction VCSEL/PIN monitoring Analysis of opto-board/VCSEL/PIN failures Summary K.K. Gan #12;K.K. Gan Joint ATLAS/CMS SLHC Opto WG 3 Introduction Architecture

Gan, K. K.

7

K.K. Gan ATLAS Tracker Upgrade Workshop 1 Progress Report on Joint ATLAS/CMS  

E-Print Network [OSTI]

K.K. Gan ATLAS Tracker Upgrade Workshop 1 Progress Report on Joint ATLAS/CMS SLHC Opto ATLAS Tracker Upgrade Workshop 2 Outline Introduction Subgroups activities Summary #12;K.K. Gan ATLAS System #12;K.K. Gan ATLAS Tracker Upgrade Workshop 4 Group A: Lesson Learned and to be Learned from LHC

Gan, K. K.

8

Maskless lateral epitaxial overgrowth of GaN on sapphire  

SciTech Connect (OSTI)

The authors demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed maskless LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 {micro}m) GaN layer on sapphire is selectively dry etched, leaving {approximately} 5 {micro}m-wide stripe mesas oriented in the <10{bar 1}0>{sub GaN} direction, with a 20 {micro}m period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a T, or overhang, morphology. As for LEO over an SiO{sub 2} mask, significant defect reduction (from {approximately} 10{sup 9} cm{sup {minus}2} to {approximately} 10{sup 6} cm{sup {minus}2}) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle ({approximately} 0.4--0.5{degree}) is relatively independent of growth temperature and wing aspect ratio.

Fini, P.; Marchand, H.; Ibbetson, J.P.; Moran, B.; Zhao, L.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.

1999-07-01T23:59:59.000Z

9

Si in GaN -- On the nature of the background donor  

SciTech Connect (OSTI)

A characterization of the Si impurity in GaN is performed by Raman spectroscopy. Applying hydrostatic pressure up to 25 GPa the authors study the behavior of the LO phonon-plasmon mode in a series of high mobility Si doped GaN films. In contrast to earlier results on unintentionally doped bulk GaN crystals no freeze out of the free carriers could be observed in Si doped samples. The authors find that Si is a shallow hydrogenic donor throughout the pressure range studied. This result positively excludes Si incorporation as a dominant source of free electrons in previously studied bulk GaN samples.

Wetzel, C.; Chen, A.L.; Suski, T.; Ager, J.W. III; Walukiewicz, W. [Lawrence Berkeley National Lab., CA (United States). Materials Science Div.

1996-08-01T23:59:59.000Z

10

Structural defects in GaN revealed by Transmission Electron Microscopy  

SciTech Connect (OSTI)

This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

Liliental-Weber, Zuzanna

2014-04-18T23:59:59.000Z

11

Synthesis and Structure of Sr3GaN3 and Sr6GaN5:? Strontium Gallium Nitrides with Isolated Planar [GaN3]6- Anions  

Science Journals Connector (OSTI)

Synthesis and Structure of Sr3GaN3 and Sr6GaN5:? Strontium Gallium Nitrides with Isolated Planar [GaN3]6- Anions ... 9-19 In most cases, an alkaline earth metal is introduced into a Na melt to enhance the solubility of nitrogen, and is incorporated in the nitride product. ... The container was sealed by welding its open end in an argon atmosphere with active water-cooling so that NaN3 did not decompose due to heating during the welding. ...

Dong Gon Park; Zoltán A. Gál; Francis J. DiSalvo

2003-02-13T23:59:59.000Z

12

Dynamic Model of Hydrogen in GaN  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Dynamic Model of Hydrogen in GaN by S. M. Myers and A. F. Wright Motivation-Hydrogen is incorporated into p-type GaN during MOCVD growth, producing highly stable passivation of the Mg acceptors. Complete acceptor activation by thermal H release requires temperatures that threaten material integrity, prompting compromises in device processing. At lower temperatures, forward bias of p-n junctions or electron-beam irradiation produces a metastable, reversible activation without H release. To understand and control such effects, we are developing a mathematical model of H behavior wherein state energies from density-functional theory are employed in diffusion-reaction equations. Previously, we used the greatly simplifying assumptions of local equilibrium among states

13

Metal contacts on ZnSe and GaN  

SciTech Connect (OSTI)

Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

Duxstad, K.J. [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering; [Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

1997-05-01T23:59:59.000Z

14

K.K. Gan Siena02 1 The Ohio State University  

E-Print Network [OSTI]

.K. Gan Siena02 6 l Decode Bi-Phase Mark encoded (BPM) clock and command signals from PIN diode l Input Error Rate (BER): BPM #12;K.K. Gan Siena02 7 l Training period: ~25 ms of 20 MHz clock (BPM with no data) DORIC Logic ] Ready

Gan, K. K.

15

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy  

E-Print Network [OSTI]

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy A. J. Ptak, L. J-assisted molecular-beam epitaxy to study the dependence of oxygen incorporation on polarity and oxygen partial pressure. Oxygen incorporates at a rate ten times faster on nitrogen-polar GaN than on the Ga polarity

Myers, Tom

16

Optical resonance modes in GaN pyramid microcavities  

SciTech Connect (OSTI)

An array of GaN hexagonal pyramids with a side length of 8.0 {mu}m was fabricated by selective epitaxial overgrowth. These microsized pyramids are highly efficient microcavities. Three types of optical resonance modes with mode spacings of 10, 5.0, and 6.0 {Angstrom} were observed when a single pyramid was pumped optically by an intense ultraviolet laser beam. An optical ray tracing method has been developed for calculating the optical resonance modes inside the pyramid microcavities. It was shown that a single pyramidal cavity can support several different types of optical resonance modes. The calculated mode spacing agrees very well with the observations. The uniqueness and advantages of this class of hexagonal pyramidal microcavities over the other microcavities are discussed. The implications of our finding on the future GaN microcavity light emitters including micro-light-emitting diodes, microcavity lasers, and vertical-cavity-surface emitting lasers are also discussed. {copyright} {ital 1999 American Institute of Physics.}

Jiang, H.X.; Lin, J.Y.; Zeng, K.C. [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)] [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States); Yang, W. [Honeywell Technology Center, Plymouth, Minnesota 55441 (United States)] [Honeywell Technology Center, Plymouth, Minnesota 55441 (United States)

1999-08-01T23:59:59.000Z

17

Watching GaN Nanowires Grow Eric A. Stach,*, Peter J. Pauzauskie, Tevye Kuykendall,  

E-Print Network [OSTI]

Vision, Lawrence Berkeley National Laboratory, Berkeley, California 94720, and Department of Chemistry, Uni and experimentally demonstrated that congruent sublimation of GaN is possible, which yields diatomic or polymeric

Yang, Peidong

18

In situ studies of the effect of silicon on GaN growth modes.  

SciTech Connect (OSTI)

We present real-time X-ray scattering studies of the influence of silicon on the homoepitaxial growth mode of GaN grown by metal-organic vapor-phase epitaxy. Both annealing of Si-doped GaN and surface dosing of GaN with disilane are shown to change the mode of subsequent growth from step-flow to layer-by-layer. By comparing the growth behavior induced by doped layers which have been annealed to that induced by surface dosing, we extract an approximate diffusion coefficient for Si in GaN of 3.5 x 10{sup -18} cm{sup 2}/s at 810{sup o}C.

Munkholm, A.; Stephenson, G. B.; Eastman, J. A.; Auciello, O.; Murty, M. V. R.; Thompson, C.; Fini, P.; Speck, J. S.; DenBaars, S. P.; Northern Illinois Univ.; Univ. of California at Santa Barbara

2000-12-01T23:59:59.000Z

19

Millimeter-wave GaN high electron mobility transistors and their integration with silicon electronics  

E-Print Network [OSTI]

In spite of the great progress in performance achieved during the last few years, GaN high electron mobility transistors (HEMTs) still have several important issues to be solved for millimeter-wave (30 ~ 300 GHz) applications. ...

Chung, Jinwook W. (Jinwook Will)

2011-01-01T23:59:59.000Z

20

Amorphization Processes in Au Ion Irradiated GaN at 150 - 300...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and small crystalline zones that are randomly oriented. Citation: Jiang W, WJ Weber, LM Wang, and K Sun.2004."Amorphization Processes in Au Ion Irradiated GaN at 150 - 300...

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Thermal annealing characteristics of Si and Mg-implanted GaN thin films  

SciTech Connect (OSTI)

In this letter, we report the results of ion implantation of GaN using {sup 28}Si and {sup 24}Mg species. Structural and electrical characterizations of the GaN thin films after thermal annealing show that native defects in the GaN films dominate over implant doping effects. The formation energies of the annealing induced defects are estimated to range from 1.4 to 3.6 eV. A 40 keV 10{sup 14} cm{sup {minus}2} Mg implant results in the decrease of the free-carrier concentration by three orders of magnitude compared to unimplanted GaN up to an annealing temperature of 690{degree}C. Furthermore, we have observed the correlation between these annealing-induced defects to both improved optical and electrical properties. {copyright} {ital 1996 American Institute of Physics.}

Chan, J.S.; Cheung, N.W. [Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)] [Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States); Schloss, L.; Jones, E.; Wong, W.S.; Newman, N.; Liu, X.; Weber, E.R. [Department of Material Science and Mineral Engineering, University of California, Berkeley, California 64720 (United States)] [Department of Material Science and Mineral Engineering, University of California, Berkeley, California 64720 (United States); Gassman, A.; Rubin, M.D. [Lawrence Berkeley Laboratory, 1 Cyclotron Road, University of California, Berkeley, California 64720 (United States)] [Lawrence Berkeley Laboratory, 1 Cyclotron Road, University of California, Berkeley, California 64720 (United States)

1996-05-01T23:59:59.000Z

22

In-situ ellipsometry: Identification of surface terminations during GaN growth , T. Schmidtling1  

E-Print Network [OSTI]

1 In-situ ellipsometry: Identification of surface terminations during GaN growth C. Cobet1 , T SE, one is not limited to any special bulk or surface symmetry for optical characterisation. In PAMBE

Feenstra, Randall

23

K.K. Gan ATLAS Pixel Week 1 New Results on Opto-Electronics  

E-Print Network [OSTI]

University #12;K.K. Gan ATLAS Pixel Week 2 Outline l VDC-I5 l VDC/DORIC-I5e l QA l BeO Opto-board l Summary reset from active high to low for ease of implementation by DCS ] slightly better performance at ±3s: Engineering Run #12;K.K. Gan ATLAS Pixel Week 9 l circuit boards: designed/built/tested l LabView programs

Gan, K. K.

24

Roughening surface morphology on free-standing GaN membrane with laser lift-off technique  

Science Journals Connector (OSTI)

An ultraviolet (UV) laser lift-off (LLO) technique was presented to form a roughened surface morphology on GaN membrane grown by...

Ting Wang; Xia Guo; Yuan Fang; GuangDi Shen

2007-04-01T23:59:59.000Z

25

Journal of Crystal Growth 293 (2006) 273277 A study of semi-insulating GaN grown on AlN buffer/sapphire  

E-Print Network [OSTI]

-temperature GaN interlayer. In comparison with the normal GaN grown on sapphire, the crystal quality measurement results of GaN grown directly on an AlN buffer indicated that the as-grown-undoped Ga, or high density of edge-type dislocations [6­10]. However, Fe and other heavy metals tend to have reactor

Ozbay, Ekmel

26

Nanostructural engineering of nitride nucleation layers for GaN substrate dislocation reduction.  

SciTech Connect (OSTI)

With no lattice matched substrate available, sapphire continues as the substrate of choice for GaN growth, because of its reasonable cost and the extensive prior experience using it as a substrate for GaN. Surprisingly, the high dislocation density does not appear to limit UV and blue LED light intensity. However, dislocations may limit green LED light intensity and LED lifetime, especially as LEDs are pushed to higher current density for high end solid state lighting sources. To improve the performance for these higher current density LEDs, simple growth-enabled reductions in dislocation density would be highly prized. GaN nucleation layers (NLs) are not commonly thought of as an application of nano-structural engineering; yet, these layers evolve during the growth process to produce self-assembled, nanometer-scale structures. Continued growth on these nuclei ultimately leads to a fully coalesced film, and we show in this research program that their initial density is correlated to the GaN dislocation density. In this 18 month program, we developed MOCVD growth methods to reduce GaN dislocation densities on sapphire from 5 x 10{sup 8} cm{sup -2} using our standard delay recovery growth technique to 1 x 10{sup 8} cm{sup -2} using an ultra-low nucleation density technique. For this research, we firmly established a correlation between the GaN nucleation thickness, the resulting nucleation density after annealing, and dislocation density of full GaN films grown on these nucleation layers. We developed methods to reduce the nuclei density while still maintaining the ability to fully coalesce the GaN films. Ways were sought to improve the GaN nuclei orientation by improving the sapphire surface smoothness by annealing prior to the NL growth. Methods to eliminate the formation of additional nuclei once the majority of GaN nuclei were developed using a silicon nitride treatment prior to the deposition of the nucleation layer. Nucleation layer thickness was determined using optical reflectance and the nucleation density was determined using atomic force microscopy (AFM) and Nomarski microscopy. Dislocation density was measured using X-ray diffraction and AFM after coating the surface with silicon nitride to delineate all dislocation types. The program milestone of producing GaN films with dislocation densities of 1 x 10{sup 8} cm{sup -2} was met by silicon nitride treatment of annealed sapphire followed by the multiple deposition of a low density of GaN nuclei followed by high temperature GaN growth. Details of this growth process and the underlying science are presented in this final report along with problems encountered in this research and recommendations for future work.

Koleske, Daniel David; Lee, Stephen Roger; Lemp, Thomas Kerr; Coltrin, Michael Elliott; Cross, Karen Charlene; Thaler, Gerald

2009-07-01T23:59:59.000Z

27

Transport properties, specific heat and thermal conductivity of GaN nanocrystalline ceramic  

SciTech Connect (OSTI)

The structural and transport properties (resistivity, thermopower and Hall effect), specific heat and thermal conductivity have been measured for GaN nanocrystalline ceramic prepared by hot pressing. It was found that the temperature dependence of resistivity in temperature range 10-300 K shows the very low activation energy, which is ascribed to the shallow donor doping originating in amorphous phase of sample. The major charge carriers are electrons, what is indicated by negative sign of Hall constant and Seebeck coefficient. The thermopower attains large values (-58 {mu}V/K at 300 K) and was characterized by linear temperature dependence which suggests the diffusion as a major contribution to Seebeck effect. The high electron concentration of 1.3x10{sup 19} cm{sup -3} and high electronic specific heat coefficient determined to be 2.4 mJ/molK{sup 2} allow to conclude that GaN ceramic demonstrates the semimetallic-like behavior accompanied by very small mobility of electrons ({approx}0.1 cm{sup 2}/V s) which is responsible for its high resistivity. A low heat conductivity of GaN ceramics is associated with partial amorphous phase of GaN grains due to high pressure sintering. - Graphical Abstract: Thermal resistivity and thermopower measurements indicates the high phonon scattering and lack of phonon-drag contribution to thermopower in GaN nanoceramics pressed under 4 GPa at 800 {sup o}C.

Sulkowski, Czeslaw [Institute of Low Temperature and Structure Research, Polish Academy of Sciences, P.O. Box 1410, 50-950 Wroclaw (Poland); ChuchmaLa, Andrzej, E-mail: andrzej.chuchmala@pwr.wroc.p [Wroclaw University of Technology, Institute of Electrical Engineering Fundamentals (I7), Wybrzeze Wyspianskiego 27, 50-370 Wroclaw (Poland); Zaleski, Andrzej J.; Matusiak, Marcin; Mucha, Jan; GLuchowski, PaweL; Strek, WiesLaw [Institute of Low Temperature and Structure Research, Polish Academy of Sciences, P.O. Box 1410, 50-950 Wroclaw (Poland)

2010-10-15T23:59:59.000Z

28

Direct measurement of curvature dependent ion etching of GaN Bentao Cui and P.I. Cohen  

E-Print Network [OSTI]

Direct measurement of curvature dependent ion etching of GaN Bentao Cui and P.I. Cohen Department of Electrical and Computer Engineering and Department of Chemical Engineering and Materials Science, University of nanoscale pores or dimples during ion etching of GaN was used to measure the magnitude of the curvature

Cohen, Philip I.

29

Effect of buffer layer growth temperature on epitaxial GaN films deposited by magnetron sputtering  

SciTech Connect (OSTI)

Epitaxial GaN films were deposited by reactive sputtering of a GaAs target in 100 % nitrogen at 700 deg. C on ZnO buffer layers grown at different substrate temperatures over sapphire substrates. High resolution X-ray diffraction measurements and the corresponding analysis show that the growth temperature of buffer layers significantly affects the micro-structural parameters of GaN epilayer, such as lateral coherence length, tilt and twist, while the vertical coherence length remains unaffected. The optimum substrate temperature for buffer layer growth has been found to be 300 deg. C. High epitaxial quality GaN film grown on such a buffer layer exhibited micro strain of 1.8x10{sup -4} along with screw and edge type dislocation densities of 7.87x10{sup 9} and 1.16x10{sup 11}, respectively.

Mohanta, P.; Singh, D.; Kumar, R.; Ganguli, T.; Srinivasa, R. S.; Major, S. S. [Center For Research in Nano-Technology and Science (India); Semiconductor Laser Section, RRCAT, Indore-452013 (India); Department of Metallurgical Engineering and Materials Science (India); Department of Physics, Indian Institute of Technology Bombay, Mumbai - 400076 (India)

2012-06-05T23:59:59.000Z

30

Green light emitting diode grown on thick strain-reduced GaN template  

Science Journals Connector (OSTI)

Abstract We report a green light-emitting diode (LED) grown on thick strain-reduced GaN template. As the injection current changes from 20 mA to 120 mA, blue-shift of EL peak wavelength reduces from 9.3 nm for the LED on sapphire substrate to 6.8 nm for the LED grown on thick strain-reduced GaN template. Furthermore, the light output power and external quantum efficiency of the LED on thick strain-reduced GaN template are respectively 1.48 mW and 2.5% at the forward current of 20 mA, which is twice as much as the LED on sapphire substrate. In contrast, the reverse current is 2 ?A lower than that of the LED on the sapphire at ?8 V.

Jiankun Yang; Tongbo Wei; Qiang Hu; Ziqiang Huo; Baojuan Sun; Ruifei Duan; Junxi Wang

2015-01-01T23:59:59.000Z

31

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect (OSTI)

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

32

Physical Properties of GaN Nanotubes as Revealed by Computer Simulation  

SciTech Connect (OSTI)

Single-crystalline wurtzite GaN nanotubes have been synthesized recently with proposed applications in nanoscale electronics, optoelectronics and the biochemical-sensing field. Molecular dynamics methods with a Stillinger-Weber potential are used to investigate the melting behavior, thermal conductivity and mechanical properties of these wurtzite-type single crystalline GaN nanotubes. Four major topical areas are summarized in this chapter. (1) The melting temperature of the GaN nanotubes increases with the thickness of the nanotubes to a saturation value, which is close to the melting temperature of bulk GaN. The simulations result reveal that the nanotubes begin to melt at the surface, and then the melting rapidly extends to the interior of the nanotubes as the temperature increases. (2) The thermal conductivity of nanotubes is smaller than that of the bulk GaN single crystal. The thermal conductivity is also found to decrease with temperature and increase with increasing wall thickness of the nanotubes. The change of phonon spectrum and surface inelastic scattering may account for the reduction of thermal conductivity in the nanotubes, while thermal softening and high frequency phonon interactions at high temperatures may provide an explanation for its decrease with increasing temperature. (3) At low temperatures, the simulation results show that the nanotubes exhibit brittle properties; whereas at high temperatures, they behave as ductile materials. The brittle to ductile transition temperature generally increases with increasing wall thickness of the nanotubes and increasing strain rate. (4) The simulation temperature, tube length and strain rate affect the buckling behavior of GaN nanotubes. The critical stress decreases with the increase of simulation temperature and tube length. The dependence of buckling on tube length is consistent with the analysis of equivalent continuum structures using Euler buckling theory.

Wang, Zhiguo; Gao, Fei; Zu, Xiaotao; Weber, William J.

2008-07-25T23:59:59.000Z

33

Lattice dynamics of GaN: Effects of 3d electrons  

Science Journals Connector (OSTI)

We perform first-principles calculations of structural, dielectric, and lattice-dynamical properties of cubic GaN. The equilibrium structure is obtained using the plane-wave pseudopotential approach within the density-functional theory and local-density approximation. The dielectric and vibrational properties are computed within the density-functional perturbation theory. The effect of the Ga 3d electrons is treated by taking into account the nonlinear core corrections for the exchange and correlation energy. The importance of 3d electrons for the bonding strength is determined, and their influence on the dielectric and dynamical properties of GaN is analyzed and discussed.

K. Karch; F. Bechstedt; T. Pletl

1997-08-15T23:59:59.000Z

34

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect (OSTI)

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

35

K.K. Gan ATLAS Tracker Upgrade Workshop 1 Nov 5, 2008  

E-Print Network [OSTI]

channel Preliminary #12;K.K. Gan ATLAS Tracker Upgrade Workshop 8 Radiation-Hardness of GaAs PIN AOC.03 AOC 5.0 0.60 0.04 Optowell 3.125 0.60 0.10 Hamamatsu G8921 2.5 0.50 0.20 Si Taiwan 1.0 0.55 0 irradiation with SLHC dose: AOC(5 & 10 G) have good power #12;K.K. Gan ATLAS Tracker Upgrade Workshop 12

Gan, K. K.

36

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect (OSTI)

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

37

Selective etching of dislocations in GaN grown by low-pressure solution growth  

Science Journals Connector (OSTI)

This work presents an experimental study on the identification and quantification of different types of dislocations in GaN grown by low-pressure solution growth. A reliable defect selective etching procedure in a NaOH-KOH melt is developed and validated using transmission electron microscopy that permits to define groups of etch pits that belong each to dislocations with a specific Burgers vector. This way a comparably fast method is provided for determining the total, the specific dislocation densities and the type of dislocation in a statistically representative way. The results for the solution grown samples are compared to those obtained for MOCVD GaN.

I.Y. Knoke; P. Berwian; E. Meissner; J. Friedrich; H.P. Strunk; G. Müller

2010-01-01T23:59:59.000Z

38

Ge doped GaN with controllable high carrier concentration for plasmonic applications  

SciTech Connect (OSTI)

Controllable Ge doping in GaN is demonstrated for carrier concentrations of up to 2.4?×?10{sup 20} cm{sup ?3}. Low temperature luminescence spectra from the highly doped samples reveal band gap renormalization and band filling (Burstein-Moss shift) in addition to a sharp transition. Infrared ellipsometry spectra demonstrate the existence of electron plasma with an energy around 3500?cm{sup ?1} and a surface plasma with an energy around 2000?cm{sup ?1}. These findings open possibilities for the application of highly doped GaN for plasmonic devices.

Kirste, Ronny; Hoffmann, Marc P.; Sachet, Edward; Bobea, Milena; Bryan, Zachary; Bryan, Isaac; Maria, Jon-Paul; Collazo, Ramón; Sitar, Zlatko [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States)] [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); Nenstiel, Christian; Hoffmann, Axel [Institut f?r Festkörperphsyik, TU-Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)] [Institut f?r Festkörperphsyik, TU-Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)

2013-12-09T23:59:59.000Z

39

K.K. Gan Group B Meeting 1 VCSEL/PIN irradiation in pre-qualification  

E-Print Network [OSTI]

/vendor VCSEL: AOC 10 Gb/s, AOC 5 Gb/s, Optowell (2.5 Gb/s) GaAs PIN: try to order 12-channel Hamamatsu bare "need custom alignment Control Sample of PIN #12;K.K. Gan Group B Meeting 4 AOC 10 Gb/s? 12

Gan, K. K.

40

K.K. Gan RD07 1 Radiation-Hard Optical Link for SLHC  

E-Print Network [OSTI]

arrays have very good optical power Optowell AOC ULM 10GULM 5G Pre-irrad #12;K.K. Gan RD07 12 Optowell 71 to SLHC dosage more VCSELs might survive with more annealing during irradiation SLHC AOC 71 MRad 0.0 0

Gan, K. K.

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Optimal Decentralized Protocol for Electric Vehicle Charging Lingwen Gan Ufuk Topcu Steven Low  

E-Print Network [OSTI]

Abstract-- Motivated by the power-grid-side challenges in the integration of electric vehicles, we proposeOptimal Decentralized Protocol for Electric Vehicle Charging Lingwen Gan Ufuk Topcu Steven Low a decentralized protocol for negotiating day-ahead charging schedules for electric vehicles. The overall goal

Low, Steven H.

42

Piezo-Phototronic Effect on Electroluminescence Properties of p-Type GaN Thin Films  

E-Print Network [OSTI]

significance on the practical applications of GaN in optoelectronic devices under a working environment where,9 Recent studies have shown its applications in improving the performance of optoelectronic devices based result in great influence for this most popular III-V semiconductor used in optoelectronic devices

Wang, Zhong L.

43

Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment  

E-Print Network [OSTI]

Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment Received 15 July 2002; accepted 27 December 2002 An electrochemical surface treatment has been developed to the large power consumption and noise levels that can be present in circuits that incorporate such devices.1

Yu, Edward T.

44

VISIBLE AND INFRARED RARE-EARTH ACTIVATED ELECTROLUMINESCENCE FROM ERBIUM DOPED GaN  

E-Print Network [OSTI]

. At the same time novel work is being conducted using rare earth elements as sources of light emission. Results. III-V semiconductors doped with rare-earth elements have also been used10VISIBLE AND INFRARED RARE-EARTH ACTIVATED ELECTROLUMINESCENCE FROM ERBIUM DOPED GaN M. Garter*, R

Steckl, Andrew J.

45

An Effective Subdivision Algorithm for Diffuse Scattering of Ray Tracing Mingming Gan1  

E-Print Network [OSTI]

Department of Electrical and Information Technology, Lund University, Lund, Sweden Contact: gan@ftw.at Abstract Accurate modeling of electromagnetic wave propagation by means of ray tracing (RT) includes by evaluating the power delay profile (PDP), delay spread and angular spread. 1 Introduction Diffuse scattering

Zemen, Thomas

46

Lattice Protein Folding With Two and Four-Body Statistical Hin Hark Gan,1  

E-Print Network [OSTI]

Lattice Protein Folding With Two and Four-Body Statistical Potentials Hin Hark Gan,1 Alexander/sequence compatibility of proteins,5,6 homology modeling,7 and protein folding simulations.8 ­10 Currently, most structures. Multibody potentials may help improve our understanding of the cooperativity of protein folding

Schlick, Tamar

47

Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular  

E-Print Network [OSTI]

Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections Tevye widths of 15-200 nm. Transmission electron microscopy confirmed that the wires were single as a carrier gas, was percolated through the TMG precursor and coupled with a second nitrogen line to give

Yang, Peidong

48

High Efficiency m-plane LEDs on Low Defect Density Bulk GaN Substrates  

SciTech Connect (OSTI)

Solid-state lighting is a key technology for reduction of energy consumption in the US and worldwide. In principle, by replacing standard incandescent bulbs and other light sources with sources based on light-emitting diodes (LEDs), ultimate energy efficiency can be achieved. The efficiency of LEDs has improved tremendously over the past two decades, however further progress is required for solid- state lighting to reach its full potential. The ability of an LED at converting electricity to light is quantified by its internal quantum efficiency (IQE). The material of choice for visible LEDs is Gallium Nitride (GaN), which is at the basis of blue-emitting LEDs. A key factor limiting the performance of GaN LEDs is the so-called efficiency droop, whereby the IQE of the LED decreases significantly at high current density. Despite decades of research, efficiency droop remains a major issue. Since high-current operation is necessary for practical lighting applications, reducing droop is a major challenge for the scientific community and the LED industry. Our approach to solving the droop issue is the use of newly available low-defect-density bulk GaN non-polar substrates. In contrast to the standard foreign substrates (sapphire, silicon carbide, silicon) used in the industry, we have employed native bulk GaN substrates with very low defect density, thus ensuring exquisite material quality and high IQE. Whereas all commercial LEDs are grown along the c-plane crystal direction of GaN, we have used m-plane non-polar substrates; these drastically modify the physical properties of the LED and enable a reduction of droop. With this approach, we have demonstrated very high IQE performance and low droop. Our results focused on violet and blue LEDs. For these, we have demonstrated very high peak IQEs and current droops of 6% and 10% respectively (up to a high current density of 200A.cm-2). All these results were obtained under electrical operation. These high IQE and low droop values are in line with the program’s milestones. They demonstrate that bulk non-polar GaN substrates represent a disruptive technology for LED performance. Application of this technology to real-world products is feasible, provided that the cost of GaN substrates is compatible with the market’s requirement.

David, Aurelien

2012-10-15T23:59:59.000Z

49

Ab initio density functional theory study of non-polar (101{sup ¯}0),?(112{sup ¯}0) and semipolar (202{sup ¯}1) GaN surfaces  

SciTech Connect (OSTI)

The atomic structures of non-polar GaN(101{sup ¯}0),?(112{sup ¯}0) and semipolar GaN(202{sup ¯}1),?(202{sup ¯}1{sup ¯}) surfaces were studied using ab initio calculations within density functional theory. The bulk-like truncated (1?×?1) structure with buckled Ga-N or Ga-Ga dimers was found stable on the non-polar GaN(101{sup ¯}0) surface in agreement with previous works. Ga-N heterodimers were found energetically stable on the GaN(112{sup ¯}0)-(1?×?1) surface. The formation of vacancies and substitution site defects was found unfavorable for non-polar GaN surfaces. Semipolar GaN(202{sup ¯}1)-(1?×?1) surface unit cells consist of non-polar (101{sup ¯}0) and semipolar (101{sup ¯}1) nano-facets. The (101{sup ¯}1) nano-facets consist of two-fold coordinated atoms, which form N-N dimers within a (2?×?1) surface unit cell on a GaN(202{sup ¯}1) surface. Dimers are not formed on the GaN(202{sup ¯}1{sup ¯}) surface. The stability of the surfaces with single (101{sup ¯}0) or (101{sup ¯}1) nano-facets was analyzed. A single non-polar (101{sup ¯}0)-(1?×?1) nano-facet was found stable on the GaN(202{sup ¯}1) surface, but unstable on the GaN(202{sup ¯}1{sup ¯}) surface. A single (101{sup ¯}1) nano-facet was found unstable. Semipolar GaN surfaces with (202{sup ¯}1) and (202{sup ¯}1{sup ¯}) polarity can be stabilized with a Ga overlayer at Ga-rich experimental conditions.

Mutombo, P.; Romanyuk, O., E-mail: romanyuk@fzu.cz [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 16200 Prague (Czech Republic)

2014-05-28T23:59:59.000Z

50

Substrate-dependent wetting layer formation during GaN growth: Impact on the morphology of the films  

SciTech Connect (OSTI)

We have compared epitaxial growth of GaN films on 6H-SiC(0001)-({radical}(3)x{radical}(3))R30 deg. -Ga and on (0001)-sapphire. Predeposited Ga layers were nitrided by ion beam assisted molecular beam epitaxy. Whereas on SiC the initially deposited Ga covers the substrate surface completely, on sapphire only Ga droplets are present. The different distribution of the predeposited Ga affects the morphology of GaN significantly. Scanning electron microscopy and atomic force microscopy analysis of the grown films show that the complete wetting of the SiC substrate with Ga enhances finally the size and the flatness of GaN terraces and thus the quality of the film. X-ray photoelectron spectroscopy measurements reveal that metallic Ga resides also on top of the GaN films during the growth.

Sidorenko, A.; Peisert, H.; Neumann, H.; Chasse, T. [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany); Leibniz-Institut fuer Oberflaechenmodifizierung e.V. Permoserstrasse 15, D-04318 Leipzig (Germany); Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany)

2007-08-15T23:59:59.000Z

51

Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy  

SciTech Connect (OSTI)

Ti/Al/Ni/Au ohmic contacts were formed on heavily doped n{sup +} metal-polar GaN samples with various Si doping concentrations grown by molecular beam epitaxy. The contact resistivity (R{sub C}) and sheet resistance (R{sub sh}) as a function of corresponding GaN free carrier concentration (n) were measured. Very low R{sub C} values (<0.09 {Omega} mm) were obtained, with a minimum R{sub C} of 0.035 {Omega} mm on a sample with a room temperature carrier concentration of {approx}5 Multiplication-Sign 10{sup 19} cm{sup -3}. Based on the systematic study, the role of R{sub C} and R{sub sh} is discussed in the context of regrown n{sup +} GaN ohmic contacts for GaN based high electron mobility transistors.

Afroz Faria, Faiza; Guo Jia; Zhao Pei; Li Guowang; Kumar Kandaswamy, Prem; Wistey, Mark; Xing Huili; Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)

2012-07-16T23:59:59.000Z

52

K.K. Gan Joint SLHC Opto Working Group 1 Results of Opto-Link R&D  

E-Print Network [OSTI]

Joint SLHC Opto Working Group 11 K.K. Gan 11 VCSEL Power vs Dosage AOC (5 & 10 Gb/s) survive to SLHC instead of 5,000 fb-1 PIN: Si: TrueLight, Hamamatsu GaAs: AOC, ULM, Optowell VCSEL: AOC, Optowell, ULM? August 08 with 24 GeV/c p (CERN) #12;K.K. Gan Joint SLHC Opto Working Group

Gan, K. K.

53

PHYSICAL REVIEW B 86, 075207 (2012) Optical signature of Mg-doped GaN: Transfer processes  

E-Print Network [OSTI]

results in the task of bipolar doping of intermediate and wide band-gap materials like CdS,1­3 ZnSe,4 ZnPHYSICAL REVIEW B 86, 075207 (2012) Optical signature of Mg-doped GaN: Transfer processes G; published 23 August 2012) Mg doping of high quality, metal organic chemical vapor deposition grown GaN films

Nabben, Reinhard

54

Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN  

SciTech Connect (OSTI)

The dependence of deep level defect incorporation in m-plane GaN films grown by metal-organic chemical vapor deposition on bulk m-plane GaN substrates as a function of growth temperature (T{sub g}) and T{sub g} ramping method was investigated using deep level optical spectroscopy. Understanding the influence of T{sub g} on GaN deep level incorporation is important for InGaN/GaN multi-quantum well (MQW) light emitting diodes (LEDs) and laser diodes (LDs) because GaN quantum barrier (QB) layers are grown much colder than thin film GaN to accommodate InGaN QW growth. Deep level spectra of low T{sub g} (800?°C) GaN films grown under QB conditions were compared to deep level spectra of high T{sub g} (1150?°C) GaN. Reducing T{sub g}, increased the defect density significantly (>50×) through introduction of emergent deep level defects at 2.09?eV and 2.9?eV below the conduction band minimum. However, optimizing growth conditions during the temperature ramp when transitioning from high to low T{sub g} substantially reduced the density of these emergent deep levels by approximately 40%. The results suggest that it is important to consider the potential for non-radiative recombination in QBs of LED or LD active regions, and tailoring the transition from high T{sub g} GaN growth to active layer growth can mitigate such non-radiative channels.

Armstrong, A. M., E-mail: aarmstr@sandia.gov [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Kelchner, K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)] [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Nakamura, S.; DenBaars, S. P. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States) [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106 (United States); Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)] [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2013-12-02T23:59:59.000Z

55

Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes  

SciTech Connect (OSTI)

We report the growth of GaN micro-rods and coaxial quantum-well heterostructures on graphene films, together with structural and optical characterization, for applications in flexible optical devices. Graphene films were grown on Cu foil by means of chemical vapor deposition, and used as the substrates for the growth of the GaN micro-rods, which were subsequently transferred onto SiO{sub 2}/Si substrates. Highly Si-doped, n-type GaN micro-rods were grown on the graphene films using metal–organic chemical vapor deposition. The growth and vertical alignment of the GaN micro-rods, which is a critical factor for the fabrication of high-performance light-emitting diodes (LEDs), were characterized using electron microscopy and X-ray diffraction. The GaN micro-rods exhibited promising photoluminescence characteristics for optoelectronic device applications, including room-temperature stimulated emission. To fabricate flexible LEDs, In{sub x}Ga{sub 1–x}N/GaN multiple quantum wells and a p-type GaN layer were deposited coaxially on the GaN micro-rods, and transferred onto Ag-coated polymer substrates using lift-off. Ti/Au and Ni/Au metal layers were formed to provide electrical contacts to the n-type and p-type GaN regions, respectively. The micro-rod LEDs exhibited intense emission of visible light, even after transfer onto the flexible polymer substrate, and reliable operation was achieved following numerous cycles of mechanical deformation.

Chung, Kunook; Beak, Hyeonjun; Tchoe, Youngbin; Oh, Hongseok; Yi, Gyu-Chul, E-mail: gcyi@snu.ac.kr [Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); Yoo, Hyobin; Kim, Miyoung [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of)

2014-09-01T23:59:59.000Z

56

Design and Simulation of Novel Enhancement Mode 5–20 kV GaN Vertical Superjunction High Electron Mobility Transistors for Smart Grid Applications  

Science Journals Connector (OSTI)

We report on the design, simulations and optimization of a novel enhancement mode 5–20 kV GaN vertical superjunction (SJ) high electron mobility transistor (HEMT). We optimize the space charge in GaN pillars using GaN SJ p–n diode for the best trade-off between breakdown voltage (BV) and specific on-resistance (Ronsp), by varying the pillar dosage, length and width. The resulting GaN SJ field effect transistor (FET) structure is projected to have, for example, Ronsp of 4.2 m? cm2 with BV of 12.4 kV.

Zhongda Li; T. Paul Chow

2013-01-01T23:59:59.000Z

57

Identification of the gallium vacancy-oxygen pair defect in GaN  

SciTech Connect (OSTI)

Cation vacancies like V{sub Ga}, V{sub Al} and their complexes with oxygen are predicted to be abundant in III-nitrides and to play an important role in nonradiative recombination. Appearing in triple or double negatively charged states, they are not paramagnetic and have not so far been detected by magnetic resonance even under illumination. In this Brief Report, we demonstrate an efficient way to make cation vacancy defects in GaN detectable by electron paramagnetic resonance and present our identification of the V{sub Ga}O{sub N} pair in GaN which is the model material for the III-nitrides and their alloys.

Son, N. T.; Hemmingsson, C. G.; Janzen, E. [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Paskova, T.; Evans, K. R. [Kyma Technologies Inc., 8829 Midway West Road, Raleigh, North Carolina 27617 (United States); Usui, A. [R and D Division, Furukawa Co., Ltd., Tsukuba, Ibaraki 305-0856 (Japan); Morishita, N.; Ohshima, T. [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Isoya, J. [Graduate School of Library, Information and Media Studies, University of Tsukuba, Tsukuba, Ibaraki 305-8550 (Japan); Monemar, B. [Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden); Nanometer Structure Consortium, Lund University, P.O. Box 118, S-221 00 Lund (Sweden)

2009-10-15T23:59:59.000Z

58

Subpicosecond time-resolved Raman studies of nonequilibrium excitations in wurtzite GaN  

SciTech Connect (OSTI)

Non-equilibrium electron distributions as well as phonon dynamics in wurtzite GaN have been measured by subpicosecond time-resolved Raman spectroscopy. The experimental results have demonstrated that for electron densities n {ge} 5 {times} 10{sup 17} cm{sup {minus}3}, the non-equilibrium electron distributions in wurtzite GaN can be very well described by Fermi-Dirac distribution functions with the temperature of electrons substantially higher than that of the lattice. The population relaxation time of longitudinal optical phonons was directly measured to be {tau} {approx_equal} 5 {+-} 1 ps at T = 25 K. The experimental results on the temperature dependence of the lifetime of longitudinal optical phonons suggest that the primary decay channels for these phonons are the decay into (1) one transverse optical phonon and one high energy, longitudinal or transverse acoustical phonons; and (2) one transverse optical phonon and one E{sub 2} phonon.

Tsen, K.T.; Ferry, D.K. [Arizona State Univ., Tempe, AZ (United States). Dept. of Physics and Astronomy; Joshi, R.P. [Old Dominion Univ., Norfolk, VA (United States). Dept. of Electrical Engineering; Botchkarev, A.; Sverdlov, B.; Salvador, A.; Morkoc, H. [Univ. of Illinois, Urbana, IL (United States). Coordinated Science Lab.

1997-12-31T23:59:59.000Z

59

Charge transfer in Fe-doped GaN: The role of the donor  

SciTech Connect (OSTI)

Several nitride-based device structures would benefit from the availability of high quality, large-area, freestanding semi-insulating GaN substrates. Due to the intrinsic n-type nature of GaN, however, the incorporation of compensating centers such as Fe is necessary to achieve the high resistivity required. We are using electron paramagnetic resonance (EPR) to explore charge transfer in 450 um thick GaN:Fe plates to understand the basic mechanisms related to compensation so that the material may be optimized for device applications. The results suggest that the simple model based on one shallow donor and a single Fe level is insufficient to describe compensation. Rather, the observation of the neutral donor and Fe3+ indicates that either the two species are spatially segregated or additional compensating and donor defects must be present.

Sunay, Ustun; Dashdorj, J.; Zvanut, M. E.; Harrison, J. G. [Department of Physics, University of Alabama at Birmingham, 1300 University Blvd., CH 310, Birmingham, Alabama 35294-1170 (United States); Leach, J. H.; Udwary, K. [Kyma Technologies, 8829 Midway West Rd., Raleigh, North Carolina 27617 (United States)

2014-02-21T23:59:59.000Z

60

K.K. Gan ATLAS Pixel Week 1 New Results on Opto-Electronics  

E-Print Network [OSTI]

with lower thresholds with BPM/DRX ] opto-board design is compatible with BPM/DRX PIN Current Thresholds with BPM/DRX 0 5 10 15 20 25 30 35 link#1 link#2 link#3 link#4 link#5 link#6 link#7 Ipin(mA) Opto-Board on Test Board Opto-Board on Test Board with BPM/DRX #12;K.K. Gan ATLAS Pixel Week 8 l one irradiated VCSEL

Gan, K. K.

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Theoretical and experimental study of dynamics of photoexcited carriers in GaN  

SciTech Connect (OSTI)

We present a theoretical and experimental study of the sub-picosecond dynamics of photo-excited carriers in GaN. In the theoretical model, interaction with an external ultrafast laser pulse is treated coherently and to account for the scattering mechanisms and dephasing processes, a generalized Monte-Carlo simulation is used. The scattering mechanisms included are carrier interactions with polar optical phonons and acoustic phonons, and carrier-carrier Coulomb interactions. We study the effect of different scattering mechanisms on the carrier densities. In the case that the excitation energy satisfies the threshold for polar optical scattering, phonon contribution is the dominant process in relaxing the system, otherwise, carrier-carrier mechanism is dominant. Furthermore, we present the temperature and pulse power dependent normalized luminescence intensity. The results are presented over a range of temperatures, electric field, and excitation energy of the laser pulse. For comparison, we also report the experimental time-resolved photoluminescence studies on GaN samples. There is a good agreement between the simulation and experiment in normalized luminescence intensity results. Therefore, we show that we can explain the dynamics of the photo-excited carriers in GaN by including only carrier-carrier and carrier-phonon interactions and a relatively simple two-band electronic structure model.

Shishehchi, Sara; Bellotti, Enrico, E-mail: bellotti@bu.edu [ECE Department, Boston University, 8 Saint Mary's Street, Boston, Massachusetts 02215 (United States); Rudin, Sergey; Garrett, Gregory A.; Wraback, Michael [Sensors and Electron Devices Directorate, US Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, Maryland 20783 (United States)

2013-12-21T23:59:59.000Z

62

Anisotropy of effective electron masses in highly doped nonpolar GaN  

SciTech Connect (OSTI)

The anisotropic effective electron masses in wurtzite GaN are determined by generalized infrared spectroscopic ellipsometry. Nonpolar (112{sup ¯}0) oriented thin films allow accessing both effective masses, m{sub ?}{sup *} and m{sub ?}{sup *}, by determining the screened plasma frequencies. A n-type doping range up to 1.7?×?10{sup 20}?cm{sup ?3} is investigated. The effective mass ratio m{sub ?}{sup *}/m{sub ?}{sup *} is obtained with highest accuracy and is found to be 1.11 independent on electron concentration up to 1.2?×?10{sup 20}?cm{sup ?3}. For higher electron concentrations, the conduction band non-parabolicity is mirrored in changes. Absolute values for effective electron masses depend on additional input of carrier concentrations determined by Hall effect measurements. We obtain m{sub ?}{sup *}=(0.239±0.004)m{sub 0} and m{sub ?}{sup *}=(0.216±0.003)m{sub 0} for the parabolic range of the GaN conduction band. Our data are indication of a parabolic GaN conduction band up to an energy of approximately 400?meV above the conduction band minimum.

Feneberg, Martin, E-mail: martin.feneberg@ovgu.de; Lange, Karsten; Lidig, Christian; Wieneke, Matthias; Witte, Hartmut; Bläsing, Jürgen; Dadgar, Armin; Krost, Alois; Goldhahn, Rüdiger [Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg (Germany)] [Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg (Germany)

2013-12-02T23:59:59.000Z

63

Red light emitting solid state hybrid quantum dot–near-UV GaN LED devices  

Science Journals Connector (OSTI)

We produced core–shell (CdSe)ZnSe quantum dots by direct colloidal chemical synthesis and the surface-passivation method—an overcoating of the core CdSe with a larger-bandgap material ZnSe. The (CdSe)ZnSe quantum dots(QDs) play the role of a colour conversion centre. We call these quantum dots nanophosphors. We fabricated red light emitting hybrid devices of (CdSe)ZnSe QDs and a near-UV GaN LED by combining red light emitting (CdSe)ZnSe quantum dots (as a colour conversion centre) with a near-UV(NUV) GaN LED chip (as an excitation source). A few good red phosphors have been known for UV excitation wavelengths, and red phosphors for UV excitation have been sought for a long time. Here we tested the possibility of using (CdSe)ZnSe QDs as red nanophosphors for UV excitation. The fabricated red light emitting hybrid device of (CdSe)ZnSe and a NUV GaN LED chip showed a good luminance. We demonstrated that the (CdSe)ZnSe quantum dots were promising red nanophosphors for NUV excitation and that a red LED made of QDs and a NUV excitation source was a highly efficient hybrid device.

Hongjoo Song; Seonghoon Lee

2007-01-01T23:59:59.000Z

64

Scanning tunneling microscopy on unpinned GaN(11¯00) surfaces: Invisibility of valence-band states  

Science Journals Connector (OSTI)

We investigated the origins of the tunnel current in scanning tunneling microscopy (STM) and spectroscopy experiments on GaN(11¯00) surfaces. By calculating the tunnel currents in the presence of a tip-induced band bending for unpinned n-type GaN(11¯00) surfaces, we demonstrate that only conduction-band states are observed at positive and negative voltage polarities independent of the doping concentration. Valence-band states remain undetectable because tunneling out of the electron-accumulation zone in conduction-band states dominates by four orders of magnitude. As a result band-gap sizes cannot be determined by STM on unpinned GaN(11¯00) surfaces. Appropriate band-edge positions and gap sizes can be determined on pinned surfaces.

Ph. Ebert, L. Ivanova, and H. Eisele

2009-08-24T23:59:59.000Z

65

Ab initio study on noncompensated CrO codoping of GaN for enhanced solar energy conversion  

SciTech Connect (OSTI)

We describe a novel photocatalyst obtained by codoping GaN with CrO, according to a new "noncompensated" codoping concept based on first-principles calculations. The approach enables controllable narrowing of the GaN band gap with significantly enhanced carrier mobility and photocatalytic activity in the visible light region and thus offers immense potential for application in solar energy conversion, water splitting, and a variety of solar-assisted photocatalysis. Our calculations indicate that the formation energy for the cation doping is greatly reduced by noncompensated codoping with an anion. Although Cr doping alone can split the band gap with the formation of an intermediate band, the mobility is low due to carrier trapping by the localized states. The first-principles calculations also demonstrate that CrO codoping of GaN shifts the Fermi level into the conduction band resulting in high carrier density and mobility.

Pan, Hui [ORNL; Gu, Baohua [ORNL; Eres, Gyula [ORNL; Zhang, Zhenyu [ORNL

2010-03-01T23:59:59.000Z

66

Development of a Bulk GaN Growth Technique for Low Defect Density, Large-Area Native Substrates  

Broader source: Energy.gov (indexed) [DOE]

the Electrochemical Solution the Electrochemical Solution Growth (ESG) Technique for Native GaN Substrates DOE Energy Storage & Power Electronics Research Program 30 September 2008 PI: Karen Waldrip Advanced Power Sources R&D, Dept 2546 PM: Stan Atcitty, John Boyes Sandia National Laboratories, Albuquerque, NM, 87185 Sponsor: Gil Bindewald, DOE Power Electronics & Energy Storage Program Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. Outline * Motivation * Existing GaN Growth Technique - Epitaxial Lateral Overgrowth - Methods for Growing Bulk GaN * Development of the Electrochemical Solution Growth Technique

67

US Department of Energy (DOE)/Gosatomnadzor (GAN) of Russia project at the Petersburg Nuclear Physics Institute (PNPI)  

SciTech Connect (OSTI)

This paper presents a summary of work accomplished within the scope of the DOE-Gosatomnadzor (GAN) Agreement to reduce vulnerability to theft of direct-use nuclear materials in Russia. The DOE-GAN agreement concerns the Russian Academy of Science B.P. Konstantinov Petersburg Nuclear Physics Institute (PNPI), located 45 kilometers from St. Petersburg. The PNPI operates facilities to research basic nuclear physics. Current world conditions require particular attention to the issue of Material Protection, Control, and Accounting (MPC&A) of nuclear materials. The long-term plan to increase security at the facility is outlined, including training, physical protection upgrades, and material control and accountability. 4 figs.

Baranov, I.A.; Konoplev, K.A. [Petersburg Nuclear Physics Institute, Gatchina (Russian Federation); Hauser, G.C. [Sandia National Lab., Albuquerque, NM (United States)] [and others

1997-08-01T23:59:59.000Z

68

The impact of nanoperforation on persistent photoconductivity and optical quenching effects in suspended GaN nanomembranes  

SciTech Connect (OSTI)

We report on fabrication of suspended ?15?nm thick GaN membranes nanoperforated in an ordered fashion using direct writing of negative charges by focused ion beam and subsequent photoelectrochemical etching of GaN epilayers. Both continuous and nanoperforated membranes exhibit persistent photoconductivity (PPC), which can be optically quenched under excitation by 546?nm radiation. Optical quenching of PPC occurs also under relatively intense intrinsic excitation of nanoperforated membranes by 355?nm radiation at T?

Volciuc, Olesea, E-mail: olesea.volciuc@gmail.com [Institute of Solid State Physics, University of Bremen, Bremen 28334 (Germany) [Institute of Solid State Physics, University of Bremen, Bremen 28334 (Germany); National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova, Republic of); Braniste, Tudor [National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova, Republic of)] [National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova, Republic of); Tiginyanu, Ion, E-mail: tiginyanu@asm.md [National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova, Republic of) [National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova, Republic of); Institute of Electronic Engineering and Nanotechnologies, Academy of Sciences of Moldova, Chisinau 2028 (Moldova, Republic of); Stevens-Kalceff, Marion A. [School of Physics, University of New South Wales, Sydney NSW 2052 (Australia)] [School of Physics, University of New South Wales, Sydney NSW 2052 (Australia); Ebeling, Jakob; Aschenbrenner, Timo; Hommel, Detlef; Gutowski, Jürgen [Institute of Solid State Physics, University of Bremen, Bremen 28334 (Germany)] [Institute of Solid State Physics, University of Bremen, Bremen 28334 (Germany); Ursaki, Veaceslav [Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau 2028 (Moldova, Republic of)] [Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau 2028 (Moldova, Republic of)

2013-12-09T23:59:59.000Z

69

Nanoscale size dependence parameters on lattice thermal conductivity of Wurtzite GaN nanowires  

SciTech Connect (OSTI)

Graphical abstract: Temperature dependence of calculated lattice thermal conductivity of Wurtzite GaN nanowires. Highlights: Black-Right-Pointing-Pointer A modified Callaway model is used to calculate lattice thermal conductivity of Wurtzite GaN nanowires. Black-Right-Pointing-Pointer A direct method is used to calculate phonon group velocity for these nanowires. Black-Right-Pointing-Pointer 3-Gruneisen parameter, surface roughness, and dislocations are successfully investigated. Black-Right-Pointing-Pointer Dislocation densities are decreases with the decrease of wires diameter. -- Abstract: A detailed calculation of lattice thermal conductivity of freestanding Wurtzite GaN nanowires with diameter ranging from 97 to 160 nm in the temperature range 2-300 K, was performed using a modified Callaway model. Both longitudinal and transverse modes are taken into account explicitly in the model. A method is used to calculate the Debye and phonon group velocities for different nanowire diameters from their related melting points. Effect of Gruneisen parameter, surface roughness, and dislocations as structure dependent parameters are successfully used to correlate the calculated values of lattice thermal conductivity to that of the experimentally measured curves. It was observed that Gruneisen parameter will decrease with decreasing nanowire diameters. Scattering of phonons is assumed to be by nanowire boundaries, imperfections, dislocations, electrons, and other phonons via both normal and Umklapp processes. Phonon confinement and size effects as well as the role of dislocation in limiting thermal conductivity are investigated. At high temperatures and for dislocation densities greater than 10{sup 14} m{sup -2} the lattice thermal conductivity would be limited by dislocation density, but for dislocation densities less than 10{sup 14} m{sup -2}, lattice thermal conductivity would be independent of that.

Mamand, S.M., E-mail: soran.mamand@univsul.net [Department of Physics, College of Science, University of Sulaimani, Sulaimanyah, Iraqi Kurdistan (Iraq); Omar, M.S. [Department of Physics, College of Science, University of Salahaddin, Arbil, Iraqi Kurdistan (Iraq)] [Department of Physics, College of Science, University of Salahaddin, Arbil, Iraqi Kurdistan (Iraq); Muhammad, A.J. [Department of Physics, College of Science, University of Kirkuk, Kirkuk (Iraq)] [Department of Physics, College of Science, University of Kirkuk, Kirkuk (Iraq)

2012-05-15T23:59:59.000Z

70

K.K. Gan TWEPP08 1 Results on Opto-Link R&D  

E-Print Network [OSTI]

-Hardness of GaAs PIN AOC ULM irradiate PIN with 24 GeV protons at CERN SLHC dosage: 2.6 x 1015 p/cm2 (8.2 x.25 0.50 0.13 AOC 2.5 0.60 0.19 Optowell 3.125 0.60 0.25 Hamamatsu G8921 2.5 0.50 0.32 Si Taiwan 1.0 0 channels 2008 irradiation with SLHC dosage: AOC(5 & 10 G) have good power #12;K.K. Gan TWEPP08 8

Gan, K. K.

71

K.K. Gan Siena08 1 Results on Opto-Link R&D  

E-Print Network [OSTI]

-Hardness of GaAs PIN AOC ULM irradiate PIN with 24 GeV protons at CERN SLHC dosage: 2.6 x 1015 p/cm2 (8.2 x.25 0.50 0.13 AOC 2.5 0.60 0.19 Optowell 3.125 0.60 0.25 Hamamatsu G8921 2.5 0.50 0.32 Si Taiwan 1.0 0 channels 2008 irradiation with SLHC dosage: AOC(5 & 10 G) have good power #12;K.K. Gan Siena08 9

Gan, K. K.

72

Self-Assembled Monolayers of Alkylphosphonic Acid on GaN Substrates  

Science Journals Connector (OSTI)

In addition to their applications for short-wavelength optoelectronic and high-power electronics, group III nitrides (AlN, GaN, and InN) have been employed as components of chemical and biological sensors for gas and solution samples. ... (27) In the basic solution, ?water decreased quickly to reach a smaller plateau value, probably reflecting the electrostatic repulsion between the deprotonated ODPA and negatively charged gallium oxide surface(46) in addition to the higher solubility of deprotonated ODPA in more basic solution. ... Gallium nitride is a wide band gap semiconductor that demonstrates a unique set of optical and electrical properties as well as aqueous stability and biocompatibility. ...

Takashi Ito; Sarah M. Forman; Chundi Cao; Feng Li; Charles R. Eddy, Jr.; Michael A. Mastro; Ronald T. Holm; Richard L. Henry; Keith L. Hohn; J. H. Edgar

2008-06-04T23:59:59.000Z

73

Doping and isolation of GaN, InGaN and InAlN using ion implantation  

SciTech Connect (OSTI)

Both n- and p-type doping have been achieved in GaN using Si{sup +} or Mg{sup +}/P{sup +} implantation, respectively, followed annealing at {ge} 1050{degrees}C. Using proximity rapid thermal annealing (10sec) the GaN surface retains both smooth morphology and its original stoichiometry. Variable temperature Hall measurements reveal approximate energy levels of 62meV for the implanted Si and 171meV for the Mg, which are similar to their values in epitaxially grown GaN. Implant isolation of both n- and p-type GaN, and n-type In{sub 0.75}Al{sub 0.25}N with multiple energy inert species (e.g. N{sup +} or F{sup +}) produces high resistivity ({ge}10{sup 8}{omega}/{open_square}) after subsequent annealing in the range 600-700{degrees}C. Smaller increases in sheet resistance are observed for In{sub x}Ga{sup 1-x}N (x=0.33-0.75) under the same conditions due to the smaller energy bandgaps and the shallower energy levels of the damage-related states controlling the resistivity.

Pearton, S.J.; Vartuli, C.B.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States)] [and others

1995-08-01T23:59:59.000Z

74

Direct Measurement of Ion Beam Induced, Nanoscale Roughening of GaN Bentao Cui and P. I. Cohen  

E-Print Network [OSTI]

Direct Measurement of Ion Beam Induced, Nanoscale Roughening of GaN Bentao Cui and P. I. Cohen of a surface roughening term due to curvature-dependent sputtering or asymmetric attachment of vacancies change using atomic force microscopy, we show a method to measure the ion-roughening coefficient. Using

Cohen, Philip I.

75

K.K. Gan US ATLAS Pixel R&D Meeting 1 Results of Opto-Link R&D  

E-Print Network [OSTI]

&D Meeting 11 K.K. Gan 11 VCSEL Power vs Dosage AOC (5 & 10 Gb/s) survive to SLHC dosage 2007: Two arraysLight, Hamamatsu (new) GaAs: AOC, ULM, Optowell, Hamamatsu (new) VCSEL: AOC, Optowell, ULM

Gan, K. K.

76

Sensors and Actuators B 105 (2005) 329333 Remote sensing system for hydrogen using GaN Schottky diodes  

E-Print Network [OSTI]

including detection of combustion gases, for fuel leak detection in spacecraft, automobiles and aircraft satellites require thermal radiators to dissipate heat generated by the spacecraft elec- tronics hydrogen and hydrocarbons [1,7,24,25]. Gas sensors based on GaN could be integrated with high

Florida, University of

77

Role of Embedded Clustering in Dilute Magnetic Semiconductors: Cr Doped GaN X. Y. Cui,1  

E-Print Network [OSTI]

, typically 5 (20­30) times smaller for Cr-based (Mn-based) III-V DMS than the value expected, 3 B= Cr4 BRole of Embedded Clustering in Dilute Magnetic Semiconductors: Cr Doped GaN X. Y. Cui,1 J. E configurations coexist and the statistical distribution and associated magnetism will depend sensitively

Medvedeva, Julia E.

78

A Comparison of Magnesium and Beryllium Acceptors in GaN Grown by rf-Plasma Assisted Molecular Beam Epitaxy  

E-Print Network [OSTI]

A Comparison of Magnesium and Beryllium Acceptors in GaN Grown by rf-Plasma Assisted Molecular Beam Evans and Associates, Sunnyvale, CA 94086 ABSTRACT Step-doped structures of both magnesium and beryllium activation energy of approximately 100 meV. INTRODUCTION While magnesium is currently the most

Myers, Tom

79

First-principles calculations of the structural and electronic properties of clean GaN(0001) surfaces  

Science Journals Connector (OSTI)

We employ density-functional theory (DFT) within the local-density approximation (LDA) and generalized-gradient approximation (GGA) to study structural and electronic properties of clean GaN(0001) surfaces. The pseudopotential method is used to investigate surfaces with (1×1), (2×2), and (3×3)R30° reconstructions. We also report calculations for the N2 molecule and for the bulk phases of Ga and GaN. We find that GGA give better results than LDA for the cohesive energies, but not for the structural properties. Bulk band structures are found to be very similar for both exchange-correlation potentials. Examining the clean GaN(0001) surfaces we conclude that both potentials give very similar relaxations and an almost identical dispersion for the surface states. We also report results for ionization energies, electron affinities, and work function for the GaN(0001) surfaces. As a general trend the ionization energy decreases monotonically with the increasing of the Ga-coverage.

A. L. Rosa and J. Neugebauer

2006-05-25T23:59:59.000Z

80

Effects of surface treatment using aqua regia solution on the change of surface band bending of p-type GaN  

Science Journals Connector (OSTI)

Effects of surface treatment on the change of band bending at the surface of p-type GaN were studied using ... interpret the reduction of contact resistivity by the surface treatment. The contact resistivity on p...

Jong Kyu Kim; Ki-Jeong Kim; Bongsoo Kim; Jae Nam Kim…

2001-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Annealing of the radiation damage in Mg-implanted GaN thin films: Temperature development of lattice parameters and stresses  

Science Journals Connector (OSTI)

Heteroepitaxial GaN thin films implanted with Mg ions with a concentration of 1.3 × 1019 cm?3 are analyzed using in-situ X-ray diffraction in the temperature range of 20–700 °C. The temperature dependence of unstressed lattice parameters and stresses in the implanted films is evaluated and compared with the results from a virgin GaN thin film. The measurements indicate that the annealing of the radiation damage in the implanted GaN is accompanied by a unique temperature hysteresis of the GaN structural characteristics and the main part of the radiation damage is removed during heating in the temperature range of 100–300 °C. The temperature of 1620 °C is extrapolated as an important annealing limit in order to significantly decrease implantation-induced disorder in the films.

J. Keckes; A. Wenzel; J.W. Gerlach; B. Rauschenbach

2003-01-01T23:59:59.000Z

82

Investigations of chemical vapor deposition of GaN using synchrotron radiation  

SciTech Connect (OSTI)

The authors apply synchrotron x-ray analysis techniques to probe the surface structure of GaN films during synthesis by metal-organic chemical vapor deposition (MOCVD). Their approach is to observe the evolution of surface structure and morphology in real time using grazing incidence x-ray scattering (GIXS). This technique combines the ability of x-rays to penetrate the chemical vapor deposition environment for in situ measurements, with the sensitivity of GIXS to atomic scale structure. In this paper they present examples from some of their studies of growth modes and surface evolution as a function of process conditions that illustrate the capabilities of synchrotron x-ray analysis during MOCVD growth. They focus on studies of the homoepitaxial growth mode, island coarsening dynamics, and effects of impurities.

Thompson, C.; Stephenson, G. B.; Eastman, J. A.; Munkholm, A.; Auciello, O.; Murty, M. V. R.; Fini, P.; DenBaars, S. P.; Speck, J. S.

2000-05-25T23:59:59.000Z

83

Structural Properties of Eu-Doped GaN Investigated by Raman Spectroscopy  

SciTech Connect (OSTI)

Rare-earth (RE) impurities doped GaN are highly promising candidates for light emitting device applications due to their efficient electroluminescence properties at room temperature. Among those, Eu doped GaN has been identified as an excellent material for the red spectral region due to its strong emission at 620 nm. As a transition internal to the Eu doping atom (4f-4f), light emission originates in a much smaller complex than the more flexibly controllable quantum structures of wells, wires, and dots. This is thought to make the center less susceptible to structural defects and in particular radiation damage in the lattice host. Nevertheless, the lattice host is crucial for providing the excitation in from of free electrons and holes. In this respect, the actual lattice site Eu occupies in the host lattice, i.e. in GaN, is important. A large fraction of Eu atoms are typically inactive which must be attributed to their lattice site and local environment. GaN films implanted with Eu to concentrations of {approx}10{sup 18} cm{sup -3} were subjected to a highly directed beam of 500 keV He{sup +} at a dose of 5 x 10{sup 14} cm{sup -2}. By means of a shadow mask, irradiated and unexposed regions lie very close to each other on the same sample. We used optical and structural analysis to identify the exerted radiation damage. At the full radiation dose, photoluminescence intensity has decayed to {approx}0.01 of its initial value. From the dose dependence of the radiation decay we previously concluded, that this decay is in part due to the destruction of radiative Eu sites [J.W. Tringe, unpublished (2006)]. Along the transition from virgin to irradiated material we analyze the accumulated damage in terms of surface morphology (atomic force microscopy), crystallinity (x-ray diffraction), and phonon dispersion using micro-Raman spectroscopy. In addition to the well-studied E{sub 2}(high) mode, two new vibrational modes at 659 cm{sup -1} and 201 cm{sup -1} were observed in the Eu implanted and annealed sample, prior to He{sup +} irradiation. These modes are either remnants of the implantation damage or related to the Eu impurity. As such they can be indicative of the actual lattice site the Eu atom resides on. After irradiation, broad Raman modes at 300 cm-1 are being observed. This band indicates disorder activated Raman scattering (DARS) due to the radiation damage. An additional narrow mode appears at 672 cm{sup -1}, which can possibly be due to a nitrogen vacancy related vibrational mode. The continuous transition from irradiated to un-irradiated sample allows the direct evolution of radiation damage and its coordinated effects in structural, optical and vibrational properties. By its systematic correlation we anticipate to be able to elucidate the Eu lattice interaction and the processes of radiation damage.

Senawiratne, J; Xia, Y; Detchprohm, T; Tringe, J W; Stevens, C G; Wetzel, C

2006-06-20T23:59:59.000Z

84

Efficient Switches for Solar Power Conversion: Four Quadrant GaN Switch Enabled Three Phase Grid-Tied Microinverters  

SciTech Connect (OSTI)

Solar ADEPT Project: Transphorm is developing power switches for new types of inverters that improve the efficiency and reliability of converting energy from solar panels into useable electricity for the grid. Transistors act as fast switches and control the electrical energy that flows in an electrical circuit. Turning a transistor off opens the circuit and stops the flow of electrical current; turning it on closes the circuit and allows electrical current to flow. In this way a transistor can be used to convert DC from a solar panel into AC for use in a home. Transphorm’s transistors will enable a single semiconductor device to switch electrical currents at high-voltage in both directions—making the inverter more compact and reliable. Transphorm is using Gallium Nitride (GaN) as a semiconductor material in its transistors instead of silicon, which is used in most conventional transistors, because GaN transistors have lower losses at higher voltages and switching frequencies.

None

2012-02-13T23:59:59.000Z

85

Photoluminescence from GaN layers at high temperatures as a candidate for in situ monitoring in MOVPE  

Science Journals Connector (OSTI)

Abstract Efficient photoluminescence (PL) spectra from GaN and InGaN layers at temperatures up to 1100 K are observed with low noise floor and high dynamic resolution. A number of detailed spectral features in the PL can be directly linked to physical properties of the epitaxial grown layer. The method is suggested as an in situ monitoring tool during epitaxy of nitride LED and laser structures. Layer properties like thickness, band gap or film temperature distribution are feasible.

C. Prall; M. Ruebesam; C. Weber; M. Reufer; D. Rueter

2014-01-01T23:59:59.000Z

86

Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes  

SciTech Connect (OSTI)

The gain and photoresponse characteristics have been numerically studied for back-illuminated separate absorption and multiplication (SAM) GaN avalanche photodiodes (APDs). The parameters of fundamental models are calibrated by simultaneously comparing the simulated dark and light current characteristics with the experimental results. Effects of environmental temperatures and device dimensions on gain characteristics have been investigated, and a method to achieve the optimum thickness of charge layer is obtained. The dependence of gain characteristics and breakdown voltage on the doping concentration of the charge layer is also studied in detail to get the optimal charge layer. The bias-dependent spectral responsivity and quantum efficiency are then presented to study the photoresponse mechanisms inside SAM GaN APDs. It is found the responsivity peak red-shifts at first due to the Franz-Keldysh effect and then blue-shifts due to the reach-through effect of the absorption layer. Finally, a new SAM GaN/AlGaN heterojunction APD structure is proposed for optimizing SAM GaN APDs.

Wang, Xiaodong; Pan, Ming; Hou, Liwei; Xie, Wei [No. 50 Research Institute of China Electronics Technology Group Corporation, 200331 Shanghai (China); Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn; Xu, Jintong; Li, Xiangyang; Chen, Xiaoshuang, E-mail: xschen@mail.sitp.ac.cn; Lu, Wei [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai (China)

2014-01-07T23:59:59.000Z

87

Characterization of GaN nanowires grown on PSi, PZnO and PGaN on Si (111) substrates by thermal evaporation  

SciTech Connect (OSTI)

In this research, we used an easy and inexpensive method to synthesize highly crystalline GaN nanowires (NWs); on different substrates such as porous silicon (PSi), porous zinc oxide (PZnO) and porous gallium nitride (PGaN) on Si (111) wafer by thermal evaporation using commercial GaN powder without any catalyst. Micro structural studies by scanning electron microscopy and transmission electron microscope measurements reveal the role of different substrates in the morphology, nucleation and alignment of the GaN nanowires. The degree of alignment of the synthesized nanowires does not depend on the lattice mismatch between wires and their substrates. Further structural and optical characterizations were performed using high resolution X-ray diffraction and energy-dispersive X-ray spectroscopy. Results indicate that the nanowires are of single-crystal hexagonal GaN. The quality and density of grown GaN nanowires for different substrates are highly dependent on the lattice mismatch between the nanowires and their substrates and also on the size of the porosity of the substrates. Nanowires grown on PGaN have the best quality and highest density as compared to nanowires on other substrates. By using three kinds of porous substrates, we are able to study the increase in the alignment and density of the nanowires.

Shekari, Leila; Hassan, Haslan Abu; Thahab, Sabah M.; Hassan, Zainuriah [Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Materials Engineering Department, College of Engineering, University of Kufa, Najaf (Iraq); Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

2012-06-20T23:59:59.000Z

88

Spatial distribution and magnetism in poly-Cr-doped GaN from first principles X. Y. Cui,1 J. E. Medvedeva,2 B. Delley,3 A. J. Freeman,4 and C. Stampfl1  

E-Print Network [OSTI]

Spatial distribution and magnetism in poly-Cr-doped GaN from first principles X. Y. Cui,1 J. E the spatial distribution and magnetic coupling of Cr-doped GaN, in which exhaustive structural and magnetic direct evidence that the distribution of the doped magnetic ions is neither homogeneous nor random

Medvedeva, Julia E.

89

Temperature dependence of photoconductivity in Zn-doped GaN  

SciTech Connect (OSTI)

In agreement with predictions from a model that explained an abrupt thermal quenching of the blue luminescence (BL) band in high-resistivity Zn-doped GaN [Reshchikov et al., Phys. Rev. B 84, 075212 (2011) and Phys. Rev. B 85, 245203 (2012)], we observed the stepwise decrease of photoconductivity in this material with increasing temperature. For the sample studied in this work, the decrease in photoconductivity occurred in two steps at characteristic temperatures T{sub 1} and T{sub 2}. The characteristic temperatures increased with increasing excitation intensity, very similar to the photoluminescence (PL) behavior. The steps in photoconductivity at about 100 K and 200 K are attributed to drop in the concentration of free electrons due to the thermal emission of holes from a shallow acceptor and the Zn{sub Ga} acceptor, respectively, to the valence band and their recombination with electrons via nonradiative centers. This finding supports the model suggested previously and helps to explain other examples of tunable photoconductivity reported in literature.

Reshchikov, Michael A. [Department of Physics, Virginia Commonwealth University, Richmond, VA 23284 (United States)

2014-02-21T23:59:59.000Z

90

Polarity determination for MOCVD growth of GaN on Si(111) by convergent beam electron diffraction[Metal Organic Chemical Vapor Deposition  

SciTech Connect (OSTI)

The polarity of laterally epitaxially overgrown (LEO) GaN on Si(111) with an AlN buffer layer grown by MOCVD has been studied by convergent beam electron diffraction (CBED). The LEO GaN was studied by cross-section and plan-view transmission electron microscopy (TEM). The threading dislocation density is less than 10{sup 8} cm{sup {minus}2} and no inversion domains were observed. CBED patterns were obtained at 200 kV for the <1 {bar 1} 00> zone. Simulation was done by many-beam solution with 33 zero-order beams. The comparison of experimental CBED patterns and simulated patterns indicates that the polarity of GaN on Si(111) is Ga face.

Zhao, L.; Marchand, H.; Fini, P.; Denbaars, S.P.; Mishra, U.K.; Speck, J.S.

2000-07-01T23:59:59.000Z

91

Evaluation of growth methods for the heteroepitaxy of non-polar (11-20) GaN on sapphire by MOVPE  

E-Print Network [OSTI]

double grating spectrometer equipped with a Peltier-cooled GaAs photomultiplier tube. The spectra were recorded with signal lock-in processing techniques. As the HeCd laser absorption length is ca. 350 nm for 99% absorption in GaN (ignoring any carrier... double grating spectrometer equipped with a Peltier-cooled GaAs photomultiplier tube. The spectra were recorded with signal lock-in processing techniques. As the HeCd laser absorption length is ca. 350 nm for 99% absorption in GaN (ignoring any carrier...

Oehler, F.; Sutherland, D.; Zhu, T.; Emery, R.; Badcock, T. J.; Kappers, M. J.; Humphreys, C. J.; Dawson, P.; Oliver, R. A.

2014-09-16T23:59:59.000Z

92

Highly mismatched crystalline and amorphous GaN(1-x)As(x) alloys in the whole composition range  

SciTech Connect (OSTI)

Alloying is a commonly accepted method to tailor properties of semiconductor materials for specific applications. Only a limited number of semiconductor alloys can be easily synthesized in the full composition range. Such alloys are, in general, formed of component elements that are well matched in terms of ionicity, atom size, and electronegativity. In contrast there is a broad class of potential semiconductor alloys formed of component materials with distinctly different properties. In most instances these mismatched alloys are immiscible under standard growth conditions. Here we report on the properties of GaN1-xAsx, a highly mismatched, immiscible alloy system that was successfully synthesized in the whole composition range using a nonequilibrium low temperature molecular beam epitaxy technique. The alloys are amorphous in the composition range of 0.17GaN to ~;;0.8 eV at x~;;0.85. The reduction in the band gap can be attributed primarily to the downward movement of the conduction band for alloys with x>0.2, and to the upward movement of the valence band for alloys with x<0.2. The unique features of the band structure offer an opportunity of using GaN1-xAsx alloys for various types of solar power conversion devices.

Yu, K. M.; Novikov, S. V.; Broesler, R.; Demchenko, I. N.; Denlinger, J. D.; Liliental-Weber, Z.; Luckert, F.; Martin, R. W.; Walukiewicz, W.; Foxon, C. T.

2009-08-29T23:59:59.000Z

93

K.K. Gan US ATLAS Pixel Upgrade Workshop 1 Results of LHC & SLHC Opto-Link R&D  

E-Print Network [OSTI]

-Hardness of GaAs PIN AOC ULM irradiate PIN with 24 GeV protons at CERN SLHC dosage: 2.6 x 1015 p/cm2 (8.2 x study? Gb/s Responsivity (A/W) GaAs Pre Post ULM 4.25 0.50 0.13 AOC 2.5 0.60 0.19 Optowell 3.125 0.60 0 dosage: AOC(5 & 10 G) have good power #12;K.K. Gan US ATLAS Pixel Upgrade Workshop 8 Opto-Chips 1

Gan, K. K.

94

GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid chemical vapor deposition  

SciTech Connect (OSTI)

Ordered and dense GaN light emitting nanorods are studied with polycrystalline graphene grown by rapid chemical vapor deposition as suspended transparent electrodes. As the substitute of indium tin oxide, the graphene avoids complex processing to fill up the gaps between nanorods and subsequent surface flattening and offers high conductivity to improve the carrier injection. The as-fabricated devices have 32% improvement in light output power compared to conventional planar GaN-graphene diodes. The suspended graphene remains electrically stable up to 300?°C in air. The graphene can be obtained at low cost and high efficiency, indicating its high potential in future applications.

Xu, Kun; Xu, Chen, E-mail: xuchen58@bjut.edu.cn; Deng, Jun; Zhu, Yanxu; Guo, Weiling; Mao, Mingming; Xun, Meng; Chen, Maoxing; Zheng, Lei [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China)] [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China); Xie, Yiyang [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 (China)] [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 (China); Sun, Jie, E-mail: jie.sun@chalmers.se [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China) [Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of Education, Beijing 100124 (China); Mikroteknologi och Nanovetenskap, Chalmers Tekniska Högskola AB, Göteborg 41296 (Sweden)

2013-11-25T23:59:59.000Z

95

Top-gate thin-film transistors based on GaN channel layer Rongsheng Chen, Wei Zhou, and Hoi Sing Kwok  

E-Print Network [OSTI]

liquid gallium target. The GaN TFTs exhibit good electrical performance such as field effect mobility of 1 cm2 /Vs, threshold voltage of Ã?0.4 V, on/off current ratio of 105 , and subthreshold swing of 0 electrical sta- bility of ZnO-based TFTs is still a main issue preventing from commercialization.9 Bottom

96

Nanostructure formation during ion assisted growth of GaN by molecular beam epitaxy Bentao Cui and P.I. Cohen  

E-Print Network [OSTI]

Nanostructure formation during ion assisted growth of GaN by molecular beam epitaxy Bentao Cui and P.I. Cohen Department of Electrical and Computer Engineering and Department of Chemical Engineering Prairie, MN 55344 (Dated: March 4, 2005) Ion beam assisted molecular beam epitaxy was used to grow Ga

Cohen, Philip I.

97

Zone-boundary phonons in hexagonal and cubic GaN H. Siegle, G. Kaczmarczyk, L. Filippidis, A. P. Litvinchuk, A. Hoffmann, and C. Thomsen  

E-Print Network [OSTI]

quality are not yet available for neutron-scattering studies we performed second-order Raman-scattering results of second-order Raman-scattering experiments on hexagonal and cubic GaN covering the acoustic and the optical overtone spectral region. Based on a comparison of the experimental scattering data

Nabben, Reinhard

98

Growth of Core?Shell Ga?GaN Nanostructures via a Conventional Reflux Method and the Formation of Hollow GaN Spheres  

Science Journals Connector (OSTI)

Gallium nitride (GaN) is an important III?V semiconductor with a wide direct band gap of ?3.4 eV. ... LiHMDS exhibits good solubility in TOA. ... The products were collected by centrifugation twice at 7000 rpm for 2 min in hexane, isopropanol, ethanol, and then deionized water. ...

Tz-Jun Kuo; Chi-Liang Kuo; Chun-Hong Kuo; Michael H. Huang

2009-02-05T23:59:59.000Z

99

The reaction of carbon tetrachloride with gallium arsenide ,,001... L. Li., S, Gan, B.-K. Han, H. Qi, and R. F. Hicksa)  

E-Print Network [OSTI]

The reaction of carbon tetrachloride with gallium arsenide ,,001... L. Li., S, Gan, B.-K. Han, H, California 90095 Received 26 June 1997; accepted for publication 30 December 1997 Carbon tetrachloride of steps during the vapor-phase epitaxial growth of III­V compound semiconductors.3,4 Carbon tetrachloride

Li, Lian

100

Growth of GaN on SiC(0001) by Molecular Beam Epitaxy C. D. LEE (a), ASHUTOSH SAGAR (a), R. M. FEENSTRA  

E-Print Network [OSTI]

]. Silicon carbide has a much better lattice match to GaN (3.4%), and has gained in popularity in recent years as a substrate for both molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy of Ga where a transition between streaky and spotty behavior occurs in the reflection high energy electron

Feenstra, Randall

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

spe438-20 page 1 Garrison, N.J., Busby, C.J., Gans, P.B., Putirka, K., and Wagner, D.L., 2008, A mantle plume beneath California? The mid-Miocene Lovejoy flood basalt, northern  

E-Print Network [OSTI]

-Miocene Lovejoy flood basalt, northern California Noah J. Garrison Cathy J. Busby Phillip B. Gans Department the eastern Snake River Plain toward the Yellowstone caldera (Armstrong et al., 1975; Rodgers et al., 1990

Busby, Cathy

102

Large area supersonic jet epitaxy of AlN, GaN, and SiC on silicon  

SciTech Connect (OSTI)

AlN, GaN, and SiC thin films were grown on 100 mm diameter Si(111) and Si(100) substrates using Supersonic Jet Epitaxy (SJE). Precursor gases were seeded in lighter mass carrier gases and free jets were formed using novel slit-jet apertures. The jet design, combined with substrate rotation, allowed for a uniform flux distribution over a large area of a 100 mm wafer at growth pressures of 1--20 mTorr. Triethylaluminum, triethylgallium, and ammonia were used for nitride growth, while disilane, acetylene, and methylsilane were used for SiC growth. The films were characterized by in situ optical reflectivity, x-ray diffraction (XRD), atomic force microscopy (AFM), and spectroscopic ellipsometry (SE).

Lauhon, L.J.; Ustin, S.A.; Ho, W. [Cornell Univ., Ithaca, NY (United States). Dept. of Physics

1997-12-31T23:59:59.000Z

103

On the influence of solution density on the formation of macroscopic defects in the liquid phase epitaxy of GaN  

Science Journals Connector (OSTI)

This paper reports on a new simple method for avoiding particle-induced macroscopic defects using the liquid phase epitaxy (LPE) of GaN as an example. In a series of growth experiments by LPE of GaN it is demonstrated that the number of particle-induced macrodefects in the epitaxial layers correlates strongly and reproducibly with the density of the solution. In solutions with a density higher than that of the deleterious particles, the particles float on the solution and hence are hindered to get into contact with the seed, which is placed at the bottom of the crucible. Consequently, so-called depressions — a typical particle-induced defect in GaN–LPE layers — are avoided. The principle of avoiding the formation of macroscopic defects originating from particles by adapting the density of the solution (density criterion) should be generally applicable to solution growth processes, regardless of the material system.

S. Hussy; P. Berwian; E. Meissner; J. Friedrich; G. Müller

2008-01-01T23:59:59.000Z

104

Confirmation of intrinsic electron gap states at nonpolar GaN(1-100) surfaces combining photoelectron and surface optical spectroscopy  

SciTech Connect (OSTI)

The electronic structure of GaN(1–100) surfaces is investigated in-situ by photoelectron spectroscopy (PES) and reflection anisotropy spectroscopy (RAS). Occupied surface states 3.1?eV below the Fermi energy are observed by PES, accompanied by surface optical transitions found in RAS around 3.3?eV, i.e., below the bulk band gap. These results indicate that the GaN(1–100) surface band gap is smaller than the bulk one due to the existence of intra-gap states, in agreement with density functional theory calculations. Furthermore, the experiments demonstrate that RAS can be applied for optical surface studies of anisotropic crystals.

Himmerlich, M., E-mail: marcel.himmerlich@tu-ilmenau.de; Eisenhardt, A.; Shokhovets, S.; Krischok, S. [Institut für Physik and Institut für Mikro- und Nanotechnologien, TU Ilmenau, PF 100565, 98684 Ilmenau (Germany); Räthel, J.; Speiser, E.; Neumann, M. D.; Navarro-Quezada, A.; Esser, N. [Leibniz-Institut für Analytische Wissenschaften - ISAS - e.V., Albert-Einstein-Strasse 9, 12489 Berlin (Germany)

2014-04-28T23:59:59.000Z

105

Sputtering of Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN by electrosprayed nanodroplets  

SciTech Connect (OSTI)

This article presents a characterization of the damage caused by energetic beams of electrosprayed nanodroplets striking the surfaces of single-crystal semiconductors including Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN. The sputtering yield (number of atoms ejected per projectile's molecule), sputtering rate, and surface roughness are measured as functions of the beam acceleration potential. The maximum values of the sputtering yields range between 1.9 and 2.2 for the technological important but difficult to etch SiC and GaN respectively, and 4.5 for Ge. The maximum sputtering rates for the non-optimized beam flux conditions used in our experiments vary between 409?nm/min for SiC and 2381?nm/min for GaSb. The maximum sputtering rate for GaN is 630?nm/min. Surface roughness increases modestly with acceleration voltage, staying within 2?nm and 20?nm for all beamlet acceleration potentials and materials except Si. At intermediate acceleration potentials, the surface of Si is formed by craters orders of magnitude larger than the projectiles, yielding surface roughness in excess of 60?nm. The effect of projectile dose is studied in the case of Si. This parameter is correlated with the formation of the large craters typical of Si, which suggests that the accumulation of damage following consecutive impacts plays an important role in the interaction between beamlet and target.

Borrajo-Pelaez, Rafael; Grustan-Gutierrez, Enric; Gamero-Castaño, Manuel, E-mail: mgameroc@uci.edu [Department of Mechanical and Aerospace Engineering, University of California, Irvine, California 92697 (United States)

2013-11-14T23:59:59.000Z

106

Effects of defect clustering on optical properties of GaN by single and molecular ion irradiation  

SciTech Connect (OSTI)

The effects of irradiation by F, P, and PF{sub 4} on optical properties of GaN were studied experimentally and by atomistic simulations. Additionally, the effect of Ag was studied by simulation. The irradiation energy was 0.6?keV/amu for all projectiles. The measured photoluminescence (PL) decay time was found to be decreasing faster when irradiation was done by molecular ion compared to light ion irradiation. The PL decay time change is connected with the types of defect produced by different projectiles. Simulation results show that the light ions mainly produce isolated point defects while molecular and heavy ions produce clusters of point defects. The total amount of defects produced by the PF{sub 4} projectile was found to be very close to the sum of all defects produced in five individual cascades started by one P and four F single ions. This and the similar depth profiles of damage produced by molecular and light ion irradiations suggest that the defect clusters are one of the important reasons for fast PL decay. Moreover, the simulations of irradiation by Ag ions, whose mass is close to the mass of the PF{sub 4} molecule, showed that the produced defects are clustering in even bigger conglomerates compared to PF{sub 4} case. The latter has a tendency to split in the pre-surface region, reducing on average the density of the collision cascade.

Ullah, M. W., E-mail: mohammad.ullah@helsinki.fi; Kuronen, A.; Nordlund, K.; Djurabekova, F. [Department of Physics, University of Helsinki, P.O. Box 64, FIN 00014 (Finland); Karaseov, P. A.; Karabeshkin, K. V.; Titov, A. I. [Department of Physical Electronics, St. Petersburg State Polytechnic University, St. Petersburg (Russian Federation)

2013-11-14T23:59:59.000Z

107

Neutron-transmuted carbon-14 in neutron-irradiated GaN: Compensation of DX-like center  

SciTech Connect (OSTI)

The transmuted-C related luminescence and net carrier concentration are studied by combining photoluminescence, liquid scintillation, and Raman scattering. GaN single crystal films grown by metalorganic-vapor-phase epitaxy are irradiated with fast and thermal neutrons at fluxes of 3.9 × 10{sup 13} cm{sup ?2}s{sup ?1} and 8.15 × 10{sup 13} cm{sup ?2}s{sup ?1}, respectively. Irradiation time is 48 hours. The calculated {sup 72}Ge and {sup 14}C concentrations are 1.24 × 10{sup 18} cm{sup ?3} and 1.13 × 10{sup 18} cm{sup ?3}, respectively. The transmuted {sup 14}C is detected by the liquid scintillation method to survey ?-rays emitted in the process of {sup 14}C decays from {sup 14}N. Tritium ({sup 3}H) is also emitted by a (n,t) reaction of {sup 14}N due to the neutron irradiation above 4.5 MeV. Photoluminescence relating to C, DX-like center of Ge and yellow luminescence band are observed in 1000 °C annealed NTD-GaN. The free electron concentration estimated from Raman scattering is 4.97 × 10{sup 17} cm{sup ?3}. This value is lower than that from the transmuted Ge concentration, suggesting the compensation due to the transmuted {sup 14}C acceptors.

Ida, T.; Oga, T.; Kuriyama, K. [College of Engineering and Research Center of Ion Beam Technology, Hosei University Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Departments of Arts and Sciences, Osaka Kyoiku University Kashiwara, Osaka 582-8582 (Japan); Xu, Q.; Fukutani, S. [Research Reactor Institute, Kyoto University Kumatori, Osaka 590-0494 (Japan)

2013-12-04T23:59:59.000Z

108

Heteroepitaxial growth and surface structure of L1{sub 0}-MnGa(111) ultra-thin films on GaN(0001)  

SciTech Connect (OSTI)

L1{sub 0}-structured MnGa(111) ultra-thin films were heteroepitaxially grown on GaN(0001) under lightly Mn-rich conditions using molecular beam epitaxy. Room-temperature scanning tunneling microscopy (STM) investigations reveal smooth terraces and angular step edges, with the surface structure consisting primarily of a 2 × 2 reconstruction along with small patches of 1 × 2. Theoretical calculations were carried out using density functional theory, and the simulated STM images were calculated using the Tersoff-Hamman approximation, revealing that a stoichiometric 1 × 2 and a Mn-rich 2 × 2 surface structure give the best agreement with the observed experimental images.

Mandru, Andrada-Oana; Wang, Kangkang; Cooper, Kevin; Ingram, David C.; Smith, Arthur R. [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States)] [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Garcia Diaz, Reyes; Takeuchi, Noboru [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States) [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autónoma de México, Apartado Postal 14, Ensenada Baja California, Codigo Postal 22800 (Mexico); Haider, Muhammad [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States) [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States); Department of Physics, King Fahd University of Petroleum and Minerals, Dhahran, 31261 (Saudi Arabia)

2013-10-14T23:59:59.000Z

109

Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy  

SciTech Connect (OSTI)

Hall effect and capacitance-voltage C(V) measurements were performed on p-type GaN:Mg layers grown on GaN templates by molecular beam epitaxy with a high range of Mg-doping concentrations. The free hole density and the effective dopant concentration N{sub A}-N{sub D} as a function of magnesium incorporation measured by secondary ion mass spectroscopy clearly reveal both a magnesium doping efficiency up to 90% and a strong dependence of the acceptor ionization energy Ea with the acceptor concentration N{sub A}. These experimental observations highlight an isolated acceptor binding energy of 245{+-}25 meV compatible, at high acceptor concentration, with the achievement of p-type GaN:Mg layers with a hole concentration at room temperature close to 10{sup 19} cm{sup -3}.

Brochen, Stephane; Brault, Julien; Chenot, Sebastien; Dussaigne, Amelie; Leroux, Mathieu; Damilano, Benjamin [CNRS-CRHEA, Rue Bernard Gregory, F-06560 Valbonne (France)

2013-07-15T23:59:59.000Z

110

August 2013 Jianbang Gan  

E-Print Network [OSTI]

and Marketing), Iowa State University, 1988 B.S., Forest Engineering, Fujian Agriculture and Forestry University Specialty: Forest Resource Economics, Management, and Policy Current Research Interests: Bioenergy

111

Photoionization cross-section analysis for a deep trap contributing to current collapse in GaN field-effect transistors  

Science Journals Connector (OSTI)

We perform a more incisive numerical analysis of the photon energy dependence of the photoionization cross section of a prominent deep trap (conventionally labeled as Trap 1) which had been found [Klein et al. Appl. Phys. Lett. 75 4016 (1999)] to act as a contributor to current collapse phenomena in GaN metal-semiconductor field-effect transistors. The analytical expression for the photoionization cross section of Trap 1 is taken in the form of a convolution of a temperature-independent electronic part with a thermally broadened Franck–Condon (FC) factor which also applies to the relevant regime of large lattice relaxation. For a direct comparison with earlier results we specialize the present analysis to an electronic cross-section part represented by the Lucovsky model in combination with the semiclassical (Gaussian) approximation for the FC factor. In qualitative accordance with an earlier estimation by Klein et al. we obtain a value of E O ?1.9? eV for the classical opticalionization energy in combination with a full width at half maximum of 0.64 eV. The latter implies on the assumption for the average phonon energy to be of order 50 meV an apparently unusually large magnitude D?1.1? eV for the Franck–Condon shift. This parameter constellation is equivalent to a thermal ionization (electron binding) energy E T =E O ?D of about E T ?0.8 eV. Such a location of Trap 1 near the middle of the upper half of the fundamental gap of GaN E T ?E g /4 is at clear variance to the earlier suggestion by Klein et al. for Trap 1 to be a midgap level. The present estimation offers a chance for detecting the Trap 1 also by deep-level transient spectroscopy measurements. An eventual availability of photoionization cross-section data for different temperatures is seen to be the prerequisite for a decisive reduction of residual uncertainties concerning the configuration coordinate diagram.

Roland Pässler

2004-01-01T23:59:59.000Z

112

Homogeneous AlGaN/GaN superlattices grown on free-standing (1100) GaN substrates by plasma-assisted molecular beam epitaxy  

SciTech Connect (OSTI)

Two-dimensional and homogeneous growth of m-plane AlGaN by plasma-assisted molecular beam epitaxy has been realized on free-standing (1100) GaN substrates by implementing high metal-to-nitrogen (III/N) flux ratio. AlN island nucleation, often reported for m-plane AlGaN under nitrogen-rich growth conditions, is suppressed at high III/N flux ratio, highlighting the important role of growth kinetics for adatom incorporation. The homogeneity and microstructure of m-plane AlGaN/GaN superlattices are assessed via a combination of scanning transmission electron microscopy and high resolution transmission electron microscopy (TEM). The predominant defects identified in dark field TEM characterization are short basal plane stacking faults (SFs) bounded by either Frank-Shockley or Frank partial dislocations. In particular, the linear density of SFs is approximately 5 × 10{sup ?5} cm{sup ?1}, and the length of SFs is less than 15 nm.

Shao, Jiayi; Malis, Oana [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Zakharov, Dmitri N. [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)] [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States); Edmunds, Colin [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States)] [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, Michael J. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 49707 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 49707 (United States)

2013-12-02T23:59:59.000Z

113

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy  

Science Journals Connector (OSTI)

Time-resolved photoluminescence(TRPL) and positron annihilation measurements as well as Al0.23Ga0.77N/GaN heterostructuregrowth by metalorganic vapor phase epitaxy were carried out on very low defect density polar c-plane and nonpolar m-plane freestanding GaN (FS-GaN) substrates grown by hydride vapor phase epitaxy. Room-temperature photoluminescence(PL) lifetime for the near-band-edge (NBE) excitonic emission of the FS-GaN substrates increases with increasing positron diffusion length (L +); i.e. decreasing gross concentration of charged and neutral point defects and complexes. The best undoped c-plane FS-GaN exhibits record-long L + being 116?nm. The fast component of the PL lifetime for its NBE emission increases with temperature rise up to 100?K and levels off at approximately 1.1?ns. The result implies a saturation in thermal activation of nonradiative recombination centers. The surface and interface roughnesses for a Si-doped Al0.23Ga0.77N/GaN/Al0.18Ga0.82N/GaN heterostructure are improved by the use of FS-GaN substrates in comparison with the structure fabricated on a standard GaN template. The emission signals related to the recombination of a two-dimensional electron gas and excited holes are recognized for an Al0.23Ga0.77N/GaN single heterostructuregrown on the c-plane FS-GaN substrate.

S. F. Chichibu; K. Hazu; Y. Ishikawa; M. Tashiro; H. Namita; S. Nagao; K. Fujito; A. Uedono

2012-01-01T23:59:59.000Z

114

ARM - Datastreams - sondewnpn  

Office of Scientific and Technical Information (OSTI)

Darwin, Australia ARM Mobile Facility FKB M1 Browse Data Browse Plots Black Forest, Germany retired GAN M1 Browse Data Browse Plots Gan Airport, Gan Island, Maldives retired GRW...

115

DFW Airport  

E-Print Network [OSTI]

Dallas/Fort Worth International Airport Continuous Commissioning? CATEE 2011 Clean Air Through Energy Efficiency Conference Dallas, Texas November 9, 2011 2 Outline ? Acknowledgement ? DFW Airport Overview ? Geography ? Operational... ? Weather (temperature) ? Energy ? Continuous Commissioning? ? Consolidated Rental-A-Car (RAC) Center ? Airport Administration Building ? Terminal D (2 million sq.ft. international terminal) ? Energy Plaza (central utilities plant) ? Other Facilities...

Dennis, J. R.

2011-01-01T23:59:59.000Z

116

Holiday Inn Chicago Midway Airport Holiday Inn Chicago Midway Airport  

E-Print Network [OSTI]

Holiday Inn Chicago ­ Midway Airport Holiday Inn Chicago ­ Midway Airport 6624 S. Cicero Avenue of arrival. Holiday Inn Chicago Midway Airport is located just ten miles from downtown Chicago and offers complimentary 24 hour airport shuttle service to and from Midway Airport. The hotel offers amenities

Pritchard, Jonathan

117

AIRPORT LIGHTING Session Highlights  

E-Print Network [OSTI]

. These sessions were designed to offer practical-yet-specialized training and information outreach for personnel information on airport lighting and navigational aid equipment selection, funding, maintenance, and operation known as AirTAP, sponsored three airport-lighting training sessions at different locations in Minnesota

Minnesota, University of

118

Residence Inn Chicago Midway Airport Residence Inn Chicago Midway Airport  

E-Print Network [OSTI]

Residence Inn Chicago � Midway Airport Residence Inn Chicago � Midway Airport 6638 S. Cicero Avenue by Marriott Chicago Midway Airport is located ten miles from downtown Chicago. The hotel offers free shuttle-suite, extended-stay hotel - 5 blocks from Midway Airport � 5 floors, 132 suites � AAA 3 Diamonds � Complimentary

Pritchard, Jonathan

119

Transportation to Purdue University Indianapolis Airport and...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

to Purdue University Indianapolis Airport and Shuttle Service to Campus The closest major airport to West Lafayette, IN is in Indianapolis (code IND). The Indianapolis Airport is...

120

Airline Passengers' Satisfaction with Airports  

E-Print Network [OSTI]

Airports are places where people have the potential to experience either satisfaction or frustration, and marketing and tourism scholars have argued that customer satisfaction is one of the primary goals of airports. However, few studies have...

Kim, Hyun Joo

2012-02-14T23:59:59.000Z

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

K.K. Gan 1 Summary of Irradiation Activity  

E-Print Network [OSTI]

State University 2010: 20 ULM 5 Gb/s PIN + 12 AOC 10 Gb/s with 24 GeV protons 2 ULM 5 Gb/s PIN + 1 AOC 10 Gb/s with 300 MeV pions 2011: 2 ULM 10 Gb/s PIN/VCSEL + 20 AOC 10 Gb

Gan, K. K.

122

BAR-ILAN UNIVERSITY (RA) 52900 Ramat-Gan, Israel  

E-Print Network [OSTI]

://www.pbworld.com/pdfs/press_releases/saudilandbridge_web.pdf [5] Shatalova E. & Brautlecht N. (2013). Putin Builds North Korea Rail to Circumvent Suez Canal, http://www.bloomberg.com/news/2013-10-15/putin-builds- north-korea-rail-to-circumvent-suez-canal.html?cmpid=taboola.articles [6

Wiseman, Yair

123

Modeling upwelling circulation off the Oregon coast Jianping Gan  

E-Print Network [OSTI]

-resolution curvilinear grid is utilized. The response of the coastal ocean to forcing by observed wind stress and heat fields. Over the bank the alongshore coastal jet is displaced offshore, and colder upwelled water extends-rich surface waters near the coast. Along the north central part of the Oregon coast between 45°N and 45.5°N

Gan, Jian-Ping

124

Rapid Communications Strong piezoelectricity in individual GaN nanowires  

E-Print Network [OSTI]

are used as substrates to grow epitaxial optoelectronic devices. This paper models the annealing process, on which one can grow epitax- ial optoelectronic devices with SiGe or other sem- iconductors of a similar

Espinosa, Horacio D.

125

Magnetic characterization of conductance electrons in GaN  

E-Print Network [OSTI]

and Biology, Linko¨ping University, 581 83 Linko¨ping, Sweden Received 5 October 2009, accepted 15 March 2010 donor wave function within effective mass theory (EMT) and a followed up calculation of the hyperfine for intentional doping that allows a variation of the doping concentration. The most powerful tools to investigate

Schmidt, Wolf Gero

126

Lu Gan | Center for Bio-Inspired Solar Fuel Production  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Principal Investigators Postdoctoral Fellows Center researchers Graduate Students Undergraduate Students All Bisfuel Center Personnel Barun Das Bhupesh Goyal Jackson Megiatto Lu...

127

FAA Airport Categories Website | Open Energy Information  

Open Energy Info (EERE)

Categories Website Jump to: navigation, search OpenEI Reference LibraryAdd to library Web Site: FAA Airport Categories Website Abstract This website lists FAA airport categories....

128

Airports and Bicycles: what are the obstacles and incentives for operators 1 to improve bicycle access?  

E-Print Network [OSTI]

Airport f Boston International Airport g Minneapolis-St.Airport f Boston International Airport g Minneapolis-St.56. Boston Logan International Airport. Transportation

Orrick, Phyllis; Frick, Karen Trapenberg

2013-01-01T23:59:59.000Z

129

The impact of airline-airport relations on airport management decisions  

E-Print Network [OSTI]

Airlines, in the past, have had an important influence on airport operations through privileges granted them by the airport lease agreements. Airport administrators and sponsoring agencies have agreed to grant these ...

Cohen, Dayl Arlene

1985-01-01T23:59:59.000Z

130

Airports: No Exit from London  

Science Journals Connector (OSTI)

... cent in passenger traffic at Heathrow London Airport is expected from the introduction of the Boeing 747 jets next April. These aircraft, which are having their final tests at the ...

1969-06-21T23:59:59.000Z

131

2001: An Airspace Odyssey SUMMARY PROCEEDINGS OF THE 2001 AIRPORT NOISE SYMPOSIUM AND AIRPORT AIR QUALITY SYMPOSIUM  

E-Print Network [OSTI]

at both Boston Logan International Airport and Los AngelesRunway 27 at Boston Logan International Airport. The FAAexpansion of Boston Logan International Airport. The third

Gosling, Geoffrey D.

2001-01-01T23:59:59.000Z

132

Silver City Grant County Airport (SVC) Pavement Condition and Analysis  

E-Print Network [OSTI]

Silver City Grant County Airport (SVC) Pavement Condition and Analysis Submitted to: Jane M. Lucero ....................................1. Airport Conditions at Silver City Grant County Airport (SVC) 4 ..................................Figure 1. Geographic Location of Silver City Grant County Airport (SVC) 4 ......................Table 1

Cal, Mark P.

133

Airports and land use planning  

Science Journals Connector (OSTI)

The EPA has developed an Airport Noise Regulatory concept including an impact analysis methodology and a readily understandable format for the presentation of results. The regulatory process provides a means of reducing and/or preventing aviation noise impacts via a balanced mix of aviation actions and lead use controls. The analysis methodology which EPA has developed is based upon a comparison of aviation noise and the background levels which are due to all sources other than aviation. Hence the noise impacts of multi modal systems can be evaluated. Noise criteria have been developed for the classification of airports by severity of impact and for goals necessary to protect the public health and welfare. The regulatory process was designed to insure participation of the airport proprietor local governments and the general public. Each airport noise abatement plan will be subjected to public scrutiny in an open hearing as well as to review by the Federal Aviation Administration with consulation by the EPA. The process results in an airport operating pier for noise abatement which is basic to land use planning.

S. E. Starley

1976-01-01T23:59:59.000Z

134

Implementing Solar Technologies at Airports  

SciTech Connect (OSTI)

Federal agencies, such as the Department of Defense and Department of Homeland Security, as well as numerous private entities are actively pursuing the installation of solar technologies to help reduce fossil fuel energy use and associated emissions, meet sustainability goals, and create more robust or reliable operations. One potential approach identified for siting solar technologies is the installation of solar energy technologies at airports and airfields, which present a significant opportunity for hosting solar technologies due to large amounts of open land. This report focuses largely on the Federal Aviation Administration's (FAA's) policies toward siting solar technologies at airports.

Kandt, A.; Romero, R.

2014-07-01T23:59:59.000Z

135

E-Print Network 3.0 - airport land reclamation Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AirportAirport Suvarnabhumi Airport... ,Suvarnabhumi Airport, Bangkok, ThailandBangkok, Thailand 12;OverviewOverview Magnitudes and Financing... -- Land purchased inLand...

136

ST. LOUIS AIRPORT/ HAZELWOOD INTERIM  

E-Print Network [OSTI]

International Airport County: St. Louis County Other Names: Hazelwood Interim Storage & Vicinity, Latty Avenue radioactively-contaminated sites are part of the Formerly Utilized Sites Remedial Action Program (FUSRAP the Formerly Utilized Site Remedial Action Program (FUSRAP). Site information and updates #12;can be found

137

Dynamic Control of Airport Departures: Algorithm Development and Field Evaluation  

E-Print Network [OSTI]

testing of this control protocol at Boston Logan International Airport. I. INTRODUCTION Airport surfaceDynamic Control of Airport Departures: Algorithm Development and Field Evaluation Ioannis Simaiakis burn at major airports. In this paper, we formulate the airport surface congestion management problem

Gummadi, Ramakrishna

138

Emergence and Impact of Secondary Airports in the United States  

E-Print Network [OSTI]

As major airports in the United States have reached their maximum capacity and became congested, available capacity at surrounding airports has been utilized by the emergence of secondary airports. Given the expectation ...

Bonnefoy, Philippe

2004-01-01T23:59:59.000Z

139

Demonstration of Reduced Airport Congestion Through Pushback Rate Control  

E-Print Network [OSTI]

Airport surface congestion results in significant increases in taxi times, fuel burn and emissions at major airports. This paper presents the field tests of a control strategy to airport congestion control at Boston Logan ...

Simaiakis, Ioannis

2011-02-02T23:59:59.000Z

140

Continuous Commissioning® of the Dallas/Fort Worth International Airport  

E-Print Network [OSTI]

Continuous Commissioning ? of the Dallas/Fort Worth International Airport Jerry R. Dennis, CEM, CEP Rusty T., P.E., CEM, CEP, LEED AP Larry Kramer, P.E., CEM DFW International Airport Energy and Transportation Management DFW Airport, TX... Schroeder, P.E. HHS Associates, LLD Plano, TX ABSTRACT The DFW International Airport is one of the largest and busiest airports in the world. Located in North Texas, squarely between the cities of Dallas and Fort Worth, the DFW Airport not only...

Yazdani, B.; Schroeder, F.; Kramer, L.; Baltazar, J. C.; Turner, W. D.; Wei, G.; Deng, S.; Henson, R.; Dennis, J. R.; T., R.

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

AIRPORT SNOW AND ICE CONTROL Session Highlights  

E-Print Network [OSTI]

about the program, please contact: Jim Grothaus, Technology Transfer Engineer Air responsible for all of the equipment used to maintain the airfields at MSP International Airport, and shared-St. Paul International Airport (MSP) requires runways to be cleared within 30 minutes of closing. After

Minnesota, University of

142

Siting Solar Photovoltaics at Airports: Preprint  

SciTech Connect (OSTI)

Airports present a significant opportunity for hosting solar technologies due to their open land; based on a 2010 Federal Aviation Administration study, the US Department of Agriculture, and the US Fish and Wildlife Service, there's potential for 116,704 MW of solar photovoltaics (PV) on idle lands at US airports. PV has a low profile and likely low to no impact on flight operations. This paper outlines guidance for implementing solar technologies at airports and airfields, focusing largely on the Federal Aviation Administration's policies. The paper also details best practices for siting solar at airports, provides information on the Solar Glare Hazard Analysis Tool, and highlights a case study example where solar has been installed at an airport.

Kandt, A.; Romero, R.

2014-06-01T23:59:59.000Z

143

Metrics to Characterize Airport Operational Performance Using Surface Surveillance Data  

E-Print Network [OSTI]

Tower BOS Boston General Edward Lawrence Logan International Airport EDCT Expected Departure Clearance International Airport, and are therefore evaluated and discussed using this airport as an example. These metricsMetrics to Characterize Airport Operational Performance Using Surface Surveillance Data Harshad

Gummadi, Ramakrishna

144

Analysis and Modeling of Ground Operations at Hub Airports  

E-Print Network [OSTI]

constraint in the departure process at busy airports like Boston Logan International airport. For example1 Analysis and Modeling of Ground Operations at Hub Airports Kari Andersson1 , Francis Carr2 , Eric Feron3 and William D. Hall4 Abstract: Building simple and accurate models of hub airports can

Feron, Eric

145

Network Congestion Control of Airport Surface Operations Harshad Khadilkar  

E-Print Network [OSTI]

parameters for Boston Logan International Airport are es- timated using empirical data from a surface with simulations of traffic on a network model of Boston Logan International Airport. Nomenclature ASDE-X Airport Surface Detection Equipment, Model X BOS Boston Logan International Airport C Cost function for control

Gummadi, Ramakrishna

146

Multi-modal Transportation > Highway Transportation > Trucking > Railroad transportation > Public transit > Rural transportation > Rural transit > Freight pipeline transportation > Airport planning and development > Airport maintenance > Bicycle and pedes  

E-Print Network [OSTI]

and development > Airport maintenance > Bicycle and pedestrian > Ports and waterways >>> Transportation operat and development > Airport maintenance > Bicycle and pedestrian > Ports and waterways >>> Transportation operations pipeline transportation > Airport planning and development > Airport maintenance > Bicycle and pedestrian

147

LEDs Ready for Takeoff at Louisiana Airport | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

LEDs Ready for Takeoff at Louisiana Airport LEDs Ready for Takeoff at Louisiana Airport LEDs Ready for Takeoff at Louisiana Airport July 14, 2010 - 3:34pm Addthis Hammond, La., airport is replacing the existing incandescent taxiway lights (pictured) with LEDs. | Photo courtesy of Hammond Northshore Regional Airport Hammond, La., airport is replacing the existing incandescent taxiway lights (pictured) with LEDs. | Photo courtesy of Hammond Northshore Regional Airport Stephen Graff Former Writer & editor for Energy Empowers, EERE What are the key facts? Upgrades for safety, energy at Hammond airport possible through Recovery Act Taxiway lights to be replaced with LEDs Airport could save up to $15,000 annually on electric bills Energy efficiency is taking off at the airport in Hammond, La., about 70

148

Alternative Fuels Data Center: Propane Powers Airport Shuttles in New  

Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

Propane Powers Airport Propane Powers Airport Shuttles in New Orleans to someone by E-mail Share Alternative Fuels Data Center: Propane Powers Airport Shuttles in New Orleans on Facebook Tweet about Alternative Fuels Data Center: Propane Powers Airport Shuttles in New Orleans on Twitter Bookmark Alternative Fuels Data Center: Propane Powers Airport Shuttles in New Orleans on Google Bookmark Alternative Fuels Data Center: Propane Powers Airport Shuttles in New Orleans on Delicious Rank Alternative Fuels Data Center: Propane Powers Airport Shuttles in New Orleans on Digg Find More places to share Alternative Fuels Data Center: Propane Powers Airport Shuttles in New Orleans on AddThis.com... Feb. 19, 2011 Propane Powers Airport Shuttles in New Orleans D iscover how the New Orleans airport displaced over 139,000 gallons of

149

LEDs Ready for Takeoff at Louisiana Airport | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

LEDs Ready for Takeoff at Louisiana Airport LEDs Ready for Takeoff at Louisiana Airport LEDs Ready for Takeoff at Louisiana Airport July 14, 2010 - 3:34pm Addthis Hammond, La., airport is replacing the existing incandescent taxiway lights (pictured) with LEDs. | Photo courtesy of Hammond Northshore Regional Airport Hammond, La., airport is replacing the existing incandescent taxiway lights (pictured) with LEDs. | Photo courtesy of Hammond Northshore Regional Airport Stephen Graff Former Writer & editor for Energy Empowers, EERE What are the key facts? Upgrades for safety, energy at Hammond airport possible through Recovery Act Taxiway lights to be replaced with LEDs Airport could save up to $15,000 annually on electric bills Energy efficiency is taking off at the airport in Hammond, La., about 70

150

Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG  

Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

Atlanta Airport Atlanta Airport Converts Shuttles to CNG to someone by E-mail Share Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Facebook Tweet about Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Twitter Bookmark Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Google Bookmark Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Delicious Rank Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on Digg Find More places to share Alternative Fuels Data Center: Atlanta Airport Converts Shuttles to CNG on AddThis.com... Sept. 9, 2012 Atlanta Airport Converts Shuttles to CNG L earn how an Atlanta company saves money and conserves fuel with compressed natural gas airport shuttles.

151

Alternative Fuels Data Center: Dallas Airport Operates With Alternative  

Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

Dallas Airport Dallas Airport Operates With Alternative Fuels to someone by E-mail Share Alternative Fuels Data Center: Dallas Airport Operates With Alternative Fuels on Facebook Tweet about Alternative Fuels Data Center: Dallas Airport Operates With Alternative Fuels on Twitter Bookmark Alternative Fuels Data Center: Dallas Airport Operates With Alternative Fuels on Google Bookmark Alternative Fuels Data Center: Dallas Airport Operates With Alternative Fuels on Delicious Rank Alternative Fuels Data Center: Dallas Airport Operates With Alternative Fuels on Digg Find More places to share Alternative Fuels Data Center: Dallas Airport Operates With Alternative Fuels on AddThis.com... Sept. 5, 2009 Dallas Airport Operates With Alternative Fuels F ind out how Dallas/Fort Worth International Airport uses alternative fuels

152

E-Print Network 3.0 - airport ceo faces Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ceo faces Page: << < 1 2 3 4 5 > >> 1 Creating smarter airports An opportunity to transform travel and trade Summary: airports Executive summary Airports face multiple...

153

E-Print Network 3.0 - airport nye county Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

5, 2007 Project Initiation Workshop Aransas County Airport Rockport, Texas 03... : Corpus Christi International Airport (CRP) To: Aransas County Airport: 301 N Liveoak St,...

154

Analyse og konstruksjon av en klasse B effektforsterker i GaN teknologi; Class B power amplifier design with GaN technology.  

E-Print Network [OSTI]

??De senere årene har vist en stadig økende interesse for transistorer basert på GalliumNitrid, spesielt i design av effektforsterkere for trådløse applikasjoner. Denne rapportenbeskriver to… (more)

Mogstad, Einar Berge

2010-01-01T23:59:59.000Z

155

Alternative Fuels Data Center: Colorado Airport Relies on Natural Gas  

Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

Colorado Airport Colorado Airport Relies on Natural Gas Fueling Stations to someone by E-mail Share Alternative Fuels Data Center: Colorado Airport Relies on Natural Gas Fueling Stations on Facebook Tweet about Alternative Fuels Data Center: Colorado Airport Relies on Natural Gas Fueling Stations on Twitter Bookmark Alternative Fuels Data Center: Colorado Airport Relies on Natural Gas Fueling Stations on Google Bookmark Alternative Fuels Data Center: Colorado Airport Relies on Natural Gas Fueling Stations on Delicious Rank Alternative Fuels Data Center: Colorado Airport Relies on Natural Gas Fueling Stations on Digg Find More places to share Alternative Fuels Data Center: Colorado Airport Relies on Natural Gas Fueling Stations on AddThis.com... July 1, 2010 Colorado Airport Relies on Natural Gas Fueling Stations

156

Alternative Fuels Data Center: Voluntary Airport Low Emission (VALE)  

Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

Voluntary Airport Low Voluntary Airport Low Emission (VALE) Program to someone by E-mail Share Alternative Fuels Data Center: Voluntary Airport Low Emission (VALE) Program on Facebook Tweet about Alternative Fuels Data Center: Voluntary Airport Low Emission (VALE) Program on Twitter Bookmark Alternative Fuels Data Center: Voluntary Airport Low Emission (VALE) Program on Google Bookmark Alternative Fuels Data Center: Voluntary Airport Low Emission (VALE) Program on Delicious Rank Alternative Fuels Data Center: Voluntary Airport Low Emission (VALE) Program on Digg Find More places to share Alternative Fuels Data Center: Voluntary Airport Low Emission (VALE) Program on AddThis.com... More in this section... Federal State Advanced Search All Laws & Incentives Sorted by Type Voluntary Airport Low Emission (VALE) Program

157

Northern New Mexico regional airport market feasibility  

SciTech Connect (OSTI)

This report is about the market for airline travel in northern New Mexico. Interest in developing a northern New Mexico regional airport has periodically surfaced for a number of years. The New Mexico State Legislature passed a memorial during the 1998 Second Session calling for the conduct of a study to determine the feasibility of building a new regional airport in NNM. This report is a study of the passenger market feasibility of such an airport. In addition to commercial passenger market feasibility, there are other feasibility issues dealing with siting, environmental impact, noise, economic impact, intermodal transportation integration, region-wide transportation services, airport engineering requirements, and others. These other feasibility issues are not analyzed in any depth in this report although none were discovered to be show-stoppers as a by-product of the authors doing research on the passenger market itself. Preceding the need for a detailed study of these other issues is the determination of the basic market need for an airport with regular commercial airline service in the first place. This report is restricted to an in-depth look at the market for commercial passenger air service in NNM. 20 figs., 8 tabs.

Drake, R.H.; Williams, D.S.

1998-06-01T23:59:59.000Z

158

Of airports and architecture : exercises in public form  

E-Print Network [OSTI]

Airports as an architectural and urban typology typically lack physical and spatial integration with their urban context. Contrary to the city, airports have evolved into semi-autonomous spaces and products of political ...

Fouad, Daniel James

2006-01-01T23:59:59.000Z

159

Market-based airport demand management : theory, model and applications  

E-Print Network [OSTI]

The ever-increasing demand for access to the world's major commercial airports combined with capacity constraints at many of these airports have led to increasing air traffic congestion. In particular, the scarcity of ...

Fan, Terence P

2004-01-01T23:59:59.000Z

160

Alternative Fuels Data Center: Airport Zero Emission Vehicle (ZEV) and  

Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

Airport Zero Emission Airport Zero Emission Vehicle (ZEV) and Infrastructure Incentives to someone by E-mail Share Alternative Fuels Data Center: Airport Zero Emission Vehicle (ZEV) and Infrastructure Incentives on Facebook Tweet about Alternative Fuels Data Center: Airport Zero Emission Vehicle (ZEV) and Infrastructure Incentives on Twitter Bookmark Alternative Fuels Data Center: Airport Zero Emission Vehicle (ZEV) and Infrastructure Incentives on Google Bookmark Alternative Fuels Data Center: Airport Zero Emission Vehicle (ZEV) and Infrastructure Incentives on Delicious Rank Alternative Fuels Data Center: Airport Zero Emission Vehicle (ZEV) and Infrastructure Incentives on Digg Find More places to share Alternative Fuels Data Center: Airport Zero Emission Vehicle (ZEV) and Infrastructure Incentives on AddThis.com...

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Energy Management Practices at Dalls/Fort Worth International Airport  

E-Print Network [OSTI]

Energy Management Practices at Dallas/Fort Worth International Airport Jerry R. Dennis, CEM, CEP Energy Manager October 9, 2013 Energy Management Practices at DFW Airport, October 9, 2013 Presentation Outline ? DFW Airport Overview ? Energy... Management Section ? Structure & Mission ? Supply-Side Management ? Reliability ? Cost (Risk) mitigation ? Environmental stewardship ? Demand-Side Management ? Energy monitoring ? Energy audits ? Energy standards ? Continuous Commissioning...

Dennis, J. R.

2013-01-01T23:59:59.000Z

162

Airports in the 21st Century DRAFT April 12, 2000  

E-Print Network [OSTI]

, Dallas/Fort Worth, Denver International, Orlando and Washington/Dulles in the United StatesAirports in the 21st Century DRAFT April 12, 2000 1 AIRPORTS IN THE 21ST CENTURY Prospects Institute of Technology SUMMARY This paper explores the long-term prospects for airport development between

Entekhabi, Dara

163

MANAGEMENT OF MULTI-AIRPORT SYSTEMS: A DEVELOPMENT STRATEGY  

E-Print Network [OSTI]

, Berlin, Boston, Minneapolis/St.Paul, St.Louis, and Seattle. Yet the experience in managing multi-airport: * Edmonton: The International airport has been emptied as passengers flock to the more convenient downtown deserted (BAA, 1992); * Montreal: Montreal/Mirabel, the International airport, receives about less than 3

Entekhabi, Dara

164

Queuing Models of Airport Departure Processes for Emissions Reduction  

E-Print Network [OSTI]

is validated through a comparison of its predictions with observed data at Boston's Logan International AirportQueuing Models of Airport Departure Processes for Emissions Reduction Ioannis Simaiakis burn and emissions at airports. This paper investigates the possibility of reducing fuel burn

Gummadi, Ramakrishna

165

A Network Congestion Control Approach to Airport Departure Management  

E-Print Network [OSTI]

for a generic airport and then validate it using surface surveillance data from Boston Logan InternationalA Network Congestion Control Approach to Airport Departure Management Harshad Khadilkar and Hamsa at airports, by posing the problem in a network congestion control framework. We develop a network model

Gummadi, Ramakrishna

166

Building Airport Systems for the Next Generation Dealing with the uncertainties of airport development will require new strategies.  

E-Print Network [OSTI]

at Atlanta, Boston, Dallas/Fort Worth, Las Vegas, Miami International, New York/Kennedy, Orlando International, Philadelphia, Washington/Dulles, and elsewhere. Brand-new or thoroughly reworked airportsBuilding Airport Systems for the Next Generation Dealing with the uncertainties of airport

167

DOE - Office of Legacy Management -- St Louis Airport - MO 01  

Office of Legacy Management (LM)

Airport - MO 01 Airport - MO 01 FUSRAP Considered Sites St. Louis Airport, MO Alternate Name(s): Airport Site St. Louis Airport Storage Site (SLAPS) Former Robertson Storage Area Robertson Airport MO.01-1 MO.01-2 Location: Brown Road, Robertson, Missouri MO.01-2 Historical Operations: Stored uranium process residues containing uranium, radium, and thorium for the MED and AEC. MO.01-2 MO.01-3 MO.01-4 Eligibility Determination: Eligible MO.01-1 MO.01-7 Radiological Survey(s): Assessment Surveys MO.01-4 MO.01-5 Site Status: Cleanup in progress by U.S. Army Corps of Engineers. MO.01-6 USACE Website Long-term Care Requirements: To be determined upon completion. Also see Documents Related to St. Louis Airport, MO MO.01-1 - DOE Memorandum; Coffman to LaGrone; Subject: Authorization

168

Porous GaN nanowires synthesized using thermal chemical vapor deposition  

E-Print Network [OSTI]

Seo a , Jeunghee Park a,*, Hyunik Yang b , Bongsoo Kim c a Department of Chemistry, Korea University-791, Republic of Korea c Department of Chemistry, Korea Advanced Institute of Science and Technology, Daejeon nanotube-confined reaction [4], arc discharge [5], laser ablation [6], sublimation [7], pyrolysis [8

Kim, Bongsoo

169

Deeply-scaled GaN high electron mobility transistors for RF applications  

E-Print Network [OSTI]

Due to the unique combination of large critical breakdown field and high electron velocity, GaN-based high electron mobility transistors (HEMTs) have great potential for next generation high power RF amplifiers. The ...

Lee, Dong Seup

2014-01-01T23:59:59.000Z

170

Development of an Infrastructure for the Growth and Characterization of GaN on Nitrided Sapphire  

E-Print Network [OSTI]

and prospered. To Dr. C. Stinespring and his lab members I would like to thank for the use of the facilities and specifically Jeff Gold for the mass spectrometer measurements. I would also like to thank Dr. C. Stinespring

Myers, Tom

171

K.K. Gan HEP2007 1 Radiation-Hard Optical Link for SLHC  

E-Print Network [OSTI]

ULM requires higher voltage to operate all arrays have very good optical power Optowell AOC ULM 10 with more annealing during irradiation SLHC AOC 71 MRad 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0 100 200 300 400 Time

Gan, K. K.

172

K.K. Gan TWEPP2007 1 Radiation-Hard Optical Link for SLHC  

E-Print Network [OSTI]

irradiation of GaAs PIN from 3 vendors: Optowell, AOC, ULM responsivities will be measured next month 0 2 4 vs Dosage AOC (5 & 10 Gb/s) might survive to SLHC dosage need further analysis after radiation cool

Gan, K. K.

173

K.K. Gan B Layer Workshop 1 Opto-Link Upgrade  

E-Print Network [OSTI]

Characteristics ULM requires higher voltage to operate all arrays have very good optical power Optowell AOC ULM survive with more annealing during irradiation SLHC AOC 71 MRad 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0 100 200 300 Ch 7 Dose AOC ULM 5G 71 MRad 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 100 200 300 400 Time (Hours) Data

Gan, K. K.

174

K.K. Gan DPF/JPS06 1 Bandwidths of Micro Twisted-Pair Cables  

E-Print Network [OSTI]

requires higher voltage to operate all arrays have very good optical power Optowell AOC ULM 10GULM 5G Pre during irradiation SLHC AOC 71 MRad 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0 100 200 300 400 Time (Hours) DataOpticalP

Gan, K. K.

175

GaN Nanowire Arrays for High-Output Nanogenerators Chi-Te Huang,,  

E-Print Network [OSTI]

. Introduction Energy is the fundamental deciding factor for the sustainable development of human civilization.1 Although our current energy relies on fossil fuels, searching for nanoenabled sustain- able green energy are promising building blocks for future applications of nanodevices with excellent performance, such as laser

Wang, Zhong L.

176

Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for Under...  

Broader source: Energy.gov (indexed) [DOE]

single phase * Finalizing control system design - Space vector PWM + sensored FOC, MATLABSimulink simulation, sensor signal conditioning, digital control platform, CAN...

177

TEM studies of laterally overgrown GaN layers grown on non-polar substrates  

E-Print Network [OSTI]

73, 1691 (1998). 11. H. Marchand, J.P. Ibbetson, P.T. Fini,1999). 17. P. Fini, H. Marchand, J.P. Ibbetson, B. Moran, L.

Liliental-Weber, Z.; Ni, X.; Morkoc, H.

2006-01-01T23:59:59.000Z

178

GaN quantum dot superlattices grown by molecular beam epitaxy at high temperature  

E-Print Network [OSTI]

P-based optoelectronic devices with Si microelectronic devices. This method uses a Au-Ge eutectic alloy as the bonding. The realization of integrafion of GaAs- and InP-based optoelectronic devices with Si microelectronic components

179

Dynamic ON-resistance in high voltage GaN field-effect-transistors  

E-Print Network [OSTI]

Recently, the development of energy efficient electrical power management systems has received considerable interest due to its potential to realize significant energy savings for the world. With current Si-based power ...

Jin, Donghyun

2014-01-01T23:59:59.000Z

180

Electric field engineering in GaN high electron mobility transistors  

E-Print Network [OSTI]

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Loss of Siloxane Monolayers from GaN Surfaces in Water  

Science Journals Connector (OSTI)

Gallium nitride, with a thin passivating layer of Ga2O3, has been functionalized with octadecyltrichlorosilane (OTS) and aminopropyltriethoxysilane (APTES) self-assembled monolayers (SAMs). ... Repeat solubility tests have shown that the time necessary for complete loss of an OTS SAM in pH 7 buffer can vary from 1 to 24 h. ... The powder was found to be soluble in both water and buffer at around 1–10 ppm. ...

Christina Arisio; Catherine A. Cassou; Marya Lieberman

2013-03-27T23:59:59.000Z

182

Damage Evolution in GaN Under MeV Heavy Ion Implantation. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

decomposition, was found and was contributed to defect formation, accumulation and N bubble formation induced at different level of dpa. Crater-like holes were observed on the...

183

A TEMPERATURE ANALYSIS OF HIGH-POWER ALGAN/GAN HEMTS , Herman Oprins1  

E-Print Network [OSTI]

.H. Wills Physics Laboratory, University of Bristol, BS8 1TL, United Kingdom. ABSTRACT Galliumnitride (Ga

Boyer, Edmond

184

Low resistive p-type GaN using two-step rapid thermal annealing processes  

Science Journals Connector (OSTI)

Two-step thermal annealing processes were investigated for electrical activation of magnesium- doped galliumnitride layers. The samples were studied by room-temperature Hall measurements and photoluminescence spectroscopy at 16 K. After an annealing process consisting of a short-term step at 960?°C followed by a 600?°C dwell step for 5 min a resistivity as low as 0.84 ??cm is achieved for the activated sample which improves the results achieved by standard annealing (800?°C for 10 min) by 25% in resistivity and 100% in free hole concentration.Photoluminescence shows a peak centered at 3.0 eV which is typical for Mg-doped samples with high free hole concentrations.

M. Scherer; V. Schwegler; M. Seyboth; C. Kirchner; M. Kamp; A. Pelzmann; M. Drechsler

2001-01-01T23:59:59.000Z

185

Structural defects in GaN revealed by Transmission Electron Microscopy  

E-Print Network [OSTI]

67, 410 (1985). 23) M. Tachikawa and M Yamaguchi, Appl.Fig. 2. 20) However, Tachikawa and Yamaguchi model adapted

Liliental-Weber, Zuzanna

2014-01-01T23:59:59.000Z

186

Miami International Airport stormwater NPDES plan  

SciTech Connect (OSTI)

Miami International Airport (MIA) is endeavoring to essentially double its traffic volume by the turn of the century. This is a great challenge since the site is already highly developed. Space, safety and other constraints make it difficult to implement conventional detention/retention stormwater practices. Other practices were evaluated to control stormwater quantity/quality, since some of the downstream bodies of water are flood-prone or environmentally sensitive.

Perez, A.I.; Goldman, J.Z. [Camp Dresser and McKee Inc., Miami, FL (United States); Schmidt, M.F. [Camp Dresser and McKee Inc., Jacksonville, FL (United States); Clark, E.E. [Clark Engineers-Scientists Inc., Miami, FL (United States)

1994-12-31T23:59:59.000Z

187

New San Antonio Airport Terminal Generating Clean Power | Department of  

Broader source: Energy.gov (indexed) [DOE]

San Antonio Airport Terminal Generating Clean Power San Antonio Airport Terminal Generating Clean Power New San Antonio Airport Terminal Generating Clean Power January 27, 2011 - 2:03pm Addthis The new photovoltaic system at the San Antonio International Airport. The new photovoltaic system at the San Antonio International Airport. Todd G. Allen Project Officer, Golden Field Office What are the key facts? The City of San Antonio's EECBG proram staff awarded a block grant for a solar photovoltaic (PV) system at the airport, designed and built the project, and complied with all local and federal regulations... all in seven months. In early 2010, the City of San Antonio's Energy Efficiency and Conservation Block Grant (EECBG) program staff quickly realized a golden opportunity lay right at their fingertips. The opening of the new San

188

Alternative Fuels Data Center: Incentive for Airport Alternative Fuels Use  

Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

Laws & Incentives Laws & Incentives Printable Version Share this resource Send a link to Alternative Fuels Data Center: Incentive for Airport Alternative Fuels Use - Salt Lake City, UT to someone by E-mail Share Alternative Fuels Data Center: Incentive for Airport Alternative Fuels Use - Salt Lake City, UT on Facebook Tweet about Alternative Fuels Data Center: Incentive for Airport Alternative Fuels Use - Salt Lake City, UT on Twitter Bookmark Alternative Fuels Data Center: Incentive for Airport Alternative Fuels Use - Salt Lake City, UT on Google Bookmark Alternative Fuels Data Center: Incentive for Airport Alternative Fuels Use - Salt Lake City, UT on Delicious Rank Alternative Fuels Data Center: Incentive for Airport Alternative Fuels Use - Salt Lake City, UT on Digg

189

Comprehensive Energy Management and CC® at DFW Airport  

E-Print Network [OSTI]

Dallas/Fort Worth International Airport Continuous Commissioning? International Conference for Enhanced Building Operations New York Marriott at the Brooklyn Bridge New York, NY Larry Kramer, P.E., LC, CEM October 20, 2011 Continuous... Commissioning? of DFW International Airport, ICEBO October 20, 2011 2 DFW Airport Overview ? Serves Dallas & Fort Worth ? 18,076 acres (29.8 square mi.) ? 7 runways - 4 are 13,400? ? 4 aircraft can land simultaneously ? 3 control towers ? 5 terminals...

Kramer, L.

2011-01-01T23:59:59.000Z

190

Passenger experience and their implications for airports retail environment design.  

E-Print Network [OSTI]

??This project develops new knowledge on the full range of activities and interactions that make up airport passengers' retail experiences. The practical application of this… (more)

Livingstone, Alison Kate

2014-01-01T23:59:59.000Z

191

E-Print Network 3.0 - amsterdam airport schiphol Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

these two airports: Schiphol Airport (Amsterdam) 40 minutes by taxi or 1 hour... by train (see by Train). Rotterdam Airport 10 minutes by taxi or more than an hour by bus....

192

E-Print Network 3.0 - adds vancouver airport Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Engineering, Airport Systems Planning, Design, and Management Collection: Engineering ; Energy Storage, Conversion and Utilization 13 de Neufville Low Cost Airports 3142007...

193

Modeling airline frequency competition for airport congestion Vikrant Vaze  

E-Print Network [OSTI]

responsible for the growing demand for airport resources. We propose a game-theoretic model for airline Barnhart Department of Civil and Environmental Engineering, Massachusetts Institute of Technology Abstract: Demand often exceeds capacity at the congested airports. Airline frequency competition is partially

Entekhabi, Dara

194

DOE - Office of Legacy Management -- St Louis Airport Site Vicinity  

Office of Legacy Management (LM)

St Louis Airport Site Vicinity St Louis Airport Site Vicinity Properties - 017 FUSRAP Considered Sites Site: St. Louis Airport Site Vicinity Properties (017) Designated Name: Alternate Name: Location: Evaluation Year: Site Operations: Site Disposition: Radioactive Materials Handled: Primary Radioactive Materials Handled: Radiological Survey(s): Site Status: These properties are located in Hazelwood and Berkeley, Missouri, approximately 15 miles northwest of downtown St. Louis. The properties are associated with the St. Louis Airport Site. The Manhattan Engineer District (MED), a predecessor agency of the U.S. Department of Energy (DOE), acquired the St. Louis Airport Site in 1946. The site was operated by the MED and the Atomic Energy Commission (the successor agency to the MED and a

195

A Decision Support Tool for the Pushback Rate Control of Airport Departures  

E-Print Network [OSTI]

-testing of these types of strategies at Boston Logan International Airport, focusing on the communication). Boston Logan International Airport (BOS) is a major airport in the United States, and serves1 A Decision Support Tool for the Pushback Rate Control of Airport Departures Melanie Sandberg

Gummadi, Ramakrishna

196

Decentralized aircraft landing scheduling at single runway non-controlled airports  

E-Print Network [OSTI]

to enhance the transportation capabilities of the small airports in the U.S.A., and distribute the high volume of air traffic at the hub airports to those small airports, which are mostly non-controlled airports. Currently, two major focus areas of research...

Ding, Yuanyuan

2009-05-15T23:59:59.000Z

197

Multi-modal Transportation > Highway Transportation > Trucking > Railroad transportation > Public transit > Rural transportation > Rural transit > Freig pipeline transportation > Airport planning and development > Airport maintenance > Bicycle and pedestr  

E-Print Network [OSTI]

Multi-modal Transportation > Highway Transportation > Trucking > Railroad transportation > Public transit > Rural transportation > Rural transit > Freig pipeline transportation > Airport planning and development > Airport maintenance > Bicycle and pedestrian > Ports and waterways >>> Transportation ope

198

Tonopah Airport Solar Power Plant | Open Energy Information  

Open Energy Info (EERE)

Tonopah Airport Solar Power Plant Tonopah Airport Solar Power Plant Jump to: navigation, search Name Tonopah Airport Solar Power Plant Facility Tonopah Airport Solar Sector Solar Facility Type Concentrating Solar Power Developer Solar Millenium, LLC Location Nye County, Nevada Coordinates 38.5807111°, -116.0413889° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":38.5807111,"lon":-116.0413889,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

199

Hydrogen Production and Dispensing Facility Opens at W. Va. Airport |  

Broader source: Energy.gov (indexed) [DOE]

Hydrogen Production and Dispensing Facility Opens at W. Va. Airport Hydrogen Production and Dispensing Facility Opens at W. Va. Airport Hydrogen Production and Dispensing Facility Opens at W. Va. Airport August 19, 2009 - 1:00pm Addthis Major General Allen Tackett of the National Guard's 130th Airlift Wing dispenses the first fill-up of hydrogen fuel from the Yeager facility. Major General Allen Tackett of the National Guard's 130th Airlift Wing dispenses the first fill-up of hydrogen fuel from the Yeager facility. Washington, D.C. -- A hydrogen production and dispensing station constructed and operated with support from the Office of Fossil Energy's National Energy Technology Laboratory (NETL) was officially opened Monday at the Yeager Airport in Charleston, W.Va. The facility is an example of how domestically produced fuels may be used to power a variety of vehicles

200

Prescott Airport Solar Plant Solar Power Plant | Open Energy Information  

Open Energy Info (EERE)

Prescott Airport Solar Plant Solar Power Plant Prescott Airport Solar Plant Solar Power Plant Jump to: navigation, search Name Prescott Airport Solar Plant Solar Power Plant Facility Prescott Airport Solar Plant Sector Solar Facility Type Photovoltaic Developer APS Location Prescott, Arizona Coordinates 34.5400242°, -112.4685025° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":34.5400242,"lon":-112.4685025,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Roswell International Air Center Airport (ROW) Pavement Condition and Analysis  

E-Print Network [OSTI]

Roswell International Air Center Airport (ROW) Pavement Condition and Analysis Submitted to: Jane M ................................................1. Conditions at Roswell International Air Center (ROW) 4 .................................Figure 1. Geographic Location of Roswell International Air Center (ROW) 4 ..............................Table 1

Cal, Mark P.

202

Federal Aviation Administration's Airport Capital Improvement Program Development Process  

E-Print Network [OSTI]

The Airport Capital Improvement Program (ACIP) serves as the primary tool for project planning and formulation by the Federal Aviation Administration (FAA). The FAA relies on the ACIP to serve as the basis for the distribution of Aviation Trust...

Tener, Scott D.

2009-12-18T23:59:59.000Z

203

EECBG Success Story: LEDs Ready for Takeoff at Louisiana Airport  

Broader source: Energy.gov [DOE]

About 250 lights along the taxiway at Hammond Northshore Regional Airport in Louisiana are being replaced with light-emitting diodes (LEDs) with funds from an Energy Efficiency and Conservation Block Grant (EECBG). Learn more.

204

Competitive behavior of airlines at multiple airport systems  

E-Print Network [OSTI]

The way passenger traffic is distributed at multiple airport systems continues to intrigue air transportation planners, urban planners, and policy-makers as researchers attempt to unravel how airlines, air travelers and ...

Chen, Edmund

1995-01-01T23:59:59.000Z

205

Transfer passenger needs at airports : human factors in terminal design  

E-Print Network [OSTI]

This thesis analyzes the needs of particular users of airport: transfer passengers. The object of this work has been to produce a set of design guidelines for terminals. these guidelines are framed upon a user-need survey ...

Brillembourg, Marie-Claire

1982-01-01T23:59:59.000Z

206

A survey of approaches to the airport slot allocation problem  

E-Print Network [OSTI]

Introduction: The allocation of slots at congested major commercial airports is one of the most difficult problems facing the aviation community today. The stakes involved are very large and the controversy generated by ...

Cohen, Dayl Arlene

1985-01-01T23:59:59.000Z

207

Mitigating airport congestion : market mechanisms and airline response models  

E-Print Network [OSTI]

Efficient allocation of scarce resources in networks is an important problem worldwide. In this thesis, we focus on resource allocation problems in a network of congested airports. The increasing demand for access to the ...

Harsha, Pavithra

2009-01-01T23:59:59.000Z

208

New MagViz Airport Liquid Analysis System Undergoes Testing  

ScienceCinema (OSTI)

LOS ALAMOS, New Mexico, December 16, 2008?An innovative application of a technology first used for medical imaging may enhance airport security if Los Alamos National Laboratory scientists are successful. Los Alamos technologists have adapted Magnetic Res

None

2010-01-08T23:59:59.000Z

209

Abstract--Historic data shows an increase in carbon dioxide (CO2) emissions at airports caused by an increase  

E-Print Network [OSTI]

of this project is to provide the airport manager at major airports, such as Dulles International Airport of emissions offset. The case study of this project will be Washington Dulles International Airport (IAD Abstract-- Historic data shows an increase in carbon dioxide (CO2) emissions at airports caused

210

Alternative Fuels Data Center: North Carolina Airport Advances With Plug-In  

Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

North Carolina Airport North Carolina Airport Advances With Plug-In Electric Buses to someone by E-mail Share Alternative Fuels Data Center: North Carolina Airport Advances With Plug-In Electric Buses on Facebook Tweet about Alternative Fuels Data Center: North Carolina Airport Advances With Plug-In Electric Buses on Twitter Bookmark Alternative Fuels Data Center: North Carolina Airport Advances With Plug-In Electric Buses on Google Bookmark Alternative Fuels Data Center: North Carolina Airport Advances With Plug-In Electric Buses on Delicious Rank Alternative Fuels Data Center: North Carolina Airport Advances With Plug-In Electric Buses on Digg Find More places to share Alternative Fuels Data Center: North Carolina Airport Advances With Plug-In Electric Buses on AddThis.com...

211

Airport Viz - A 3D Tool to Enhance Security Operations | ornl...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Airport Viz - A 3D Tool to Enhance Security Operations June 12, 2013 Problem Statement: Airport security personnel needed an easy-to-use tool to investigate passenger checkpoint...

212

Modeling Changes in Connectivity at U.S. Airports: A Small Community Perspective  

E-Print Network [OSTI]

There currently exists no industry-standard model for measuring an airport's level of connectivity to the global air transportation network. This discussion paper introduces the Airport Connectivity Quality Index (ACQI)--a ...

Wittman, Michael D.

2013-06-11T23:59:59.000Z

213

Alternative Fuels Data Center: St. Louis Airport Relies on Biodiesel and  

Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

St. Louis Airport St. Louis Airport Relies on Biodiesel and Natural Gas Vehicles to someone by E-mail Share Alternative Fuels Data Center: St. Louis Airport Relies on Biodiesel and Natural Gas Vehicles on Facebook Tweet about Alternative Fuels Data Center: St. Louis Airport Relies on Biodiesel and Natural Gas Vehicles on Twitter Bookmark Alternative Fuels Data Center: St. Louis Airport Relies on Biodiesel and Natural Gas Vehicles on Google Bookmark Alternative Fuels Data Center: St. Louis Airport Relies on Biodiesel and Natural Gas Vehicles on Delicious Rank Alternative Fuels Data Center: St. Louis Airport Relies on Biodiesel and Natural Gas Vehicles on Digg Find More places to share Alternative Fuels Data Center: St. Louis Airport Relies on Biodiesel and Natural Gas Vehicles on AddThis.com...

214

Airports and Bicycles: what are the obstacles and incentives for operators 1 to improve bicycle access?  

E-Print Network [OSTI]

leading to the airport. The MBTA is testing a policy thatTransportation Authority (MBTA) T trains, buses and ferry.

Orrick, Phyllis; Frick, Karen Trapenberg

2013-01-01T23:59:59.000Z

215

Feasibility Analysis of Aircraft Landing Scheduling for Non-Controlled Airports  

E-Print Network [OSTI]

Feasibility Analysis of Aircraft Landing Scheduling for Non-Controlled Airports AIAA-2004 airports Air traffic control automation system development Trajectory analysis Aircraft landing scheduling aircraft scheduling will become the key operational issue at non-controlled airports as the operation

Valasek, John

216

Analysis of Airport Performance using Surface Surveillance Data: A Case Study of BOS  

E-Print Network [OSTI]

operational performance of an airport, and present them for the specific case of Boston Logan International. For this study, we used ASDE-X data from Boston Logan International Airport (BOS), dra of Technology, Cambridge, MA 02139. hamsa@mit.edu. AIAA Member. Operations Manager, Boston Airport Traffic

Gummadi, Ramakrishna

217

Optimal Control of Airport Operations with Gate Capacity Constraints Harshad Khadilkar and Hamsa Balakrishnan  

E-Print Network [OSTI]

at Boston's Logan International Airport in the US are used to illustrate the advantages of the proposed for Boston Logan International Airport (BOS) is shown in Fig. 1. Gates at each of the four main terminalsOptimal Control of Airport Operations with Gate Capacity Constraints Harshad Khadilkar and Hamsa

Gummadi, Ramakrishna

218

American Institute of Aeronautics and Astronautics Impact of Arrivals on Departure Taxi Operations at Airports  

E-Print Network [OSTI]

-out operations. Through an analysis of departures out of John F. Kennedy International Airport and Boston Logan affect departure operations at Boston Logan International Airport (BOS) as well as those at other International Airport, several variables affecting taxi-out times were identified, including primarily

Gummadi, Ramakrishna

219

Aircraft energy conservation during airport ground operations. Final report  

SciTech Connect (OSTI)

This study identifies and assesses potential fuel conservation options which are available for use during ground operations at Dulles International (IAD) and Washington National (DCA) airports. The study also identifies and analyzes ground operations fuel savings options which have been considered and/or implemented by the various airlines operating at IAD and/or DCA since 1971. In addition, an evaluation of computer models which could be used for analyzing these fuel conservation options at other airports is included. The impact of socio/economic factors such as safety, environment, limitation on expansion and restrictions on accommodating forecast activity at DCA and IAD were considered during the analysis of each option.

Bauchspies, J.S.; Costello, F.A.; Felder, J.; Hilliard, H.; Thompson, J.K.

1982-03-01T23:59:59.000Z

220

Observations of W intering Snowy Owls ( Nyctea scandiaca ) at Logan Airport, East Boston, Massachusetts fr om 1981-1997  

E-Print Network [OSTI]

International Airport, Boston, MA. 591 #12;2nd Owl Symposium under snow with the noise at Logan Airport. DataObservations of W intering Snowy Owls ( Nyctea scandiaca ) at Logan Airport, East Boston in East Boston, MA, latitude 42°22N and longitude 071°01W . The 13th busiest in the world, the airport

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Freight/logistics symposium ..2 Airport guidebook...................3  

E-Print Network [OSTI]

· Freight/logistics symposium ..2 · Airport guidebook...................3 · State Fair exhibit Administration in Boston, is charged with improving the nation's transpor- tation system through collaborations between the USDOT and other federal, state, local, and international agencies and entities. "This

Minnesota, University of

222

CLOUD COVER REPORTING BIAS AT MAJOR AIRPORTS Richard Perez  

E-Print Network [OSTI]

CLOUD COVER REPORTING BIAS AT MAJOR AIRPORTS Richard Perez Joshua A. Bonaventura-Sparagna & Marek Kmiecik ASRC, SUNY, Albany, NY Ray George & David Renné NREL, Golden, CO ABSTRACT Cloud cover has been generated all or in part from cloud cover measurements [1,2]. This paper presents evidence

Perez, Richard R.

223

Demonstration of Reduced Airport Congestion through Pushback Rate Control  

E-Print Network [OSTI]

in taxi times, fuel burn and emissions at major airports. This paper describes the field tests conducted during August and September 2010, fuel use was reduced by an estimated 12,250- 14,500 kg (4,000-4,700 US gallons), while aircraft gate pushback times were increased by an average of only 4.4 minutes

Gummadi, Ramakrishna

224

Issue 417 October 2014 At an airport without an operational  

E-Print Network [OSTI]

to the standard non-towered airport procedures. The following ASRS reports highlight some of the problems commonly A C680 Flight Crew had to abort their takeoff when an aircraft made an unannounced departure-Pilot called, "Airspeed alive" and then said he saw an airplane far down the runway. I yelled, "Abort" below 50

225

Development of a Bulk GaN Growth Technique for Low Defect Density, Large-Area Native Substrates  

Broader source: Energy.gov (indexed) [DOE]

Next-Generation Power Electronics: Next-Generation Power Electronics: Electrochemical Solution Growth (ESG) Technique for Bulk Gallium Nitride Substrates Karen Waldrip Dept. 2546, Advanced Power Sources R&D Sandia National Labs, Albuquerque, NM knwaldr@sandia.gov, (505) 844-1619 Acknowledgements: Mike Soboroff, Stan Atcitty, Nancy Clark, and John Boyes David Ingersoll, Frank Delnick, and Travis Anderson 2010 DOE Peer Review, Nov. 2-4, Washington, DC Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. Funded by the Energy Storage Systems Program of the U.S. Department Of Energy through Sandia National Laboratories Project Objective

226

Belgirate, Italy, 28-30 September 2005 THERMAL MODELLING OF MULTI-FINGER ALGAN/GAN HEMT's  

E-Print Network [OSTI]

dissipation of 1.8W. Table 1 gives the thermal conductivity of the materials used in the simul grown on SiC or sapphire substrates. Sapphire substrates are relatively cheap, but their low thermal conductivity is a major disadvantage. To improve the thermal performance, a hybrid integration of the HEMT onto

Paris-Sud XI, Université de

227

Resonant Raman scattering on free and bound excitons in GaN A. Kaschner,* A. Hoffmann, and C. Thomsen  

E-Print Network [OSTI]

scattering RRS has been studied for a variety of semiconductor materials, such as CdS,1 GaP,2 and GaAs,3 since the late 1960. In particular, effects of RRS on free and bound excitons in CdS were extensively investigated4­6 because crystals of high structural quality were synthesized and intentionally doped

Nabben, Reinhard

228

Thermodynamics and Enzymatic Polymerization of Artificial Metallo-Nucleic Acids AND Investigation of Duplex Formation between GAN and RNA  

E-Print Network [OSTI]

°C rt (92%). (c) DMTrCl, pyridine, rt (69%). (d) (iPr) 2 NP(Cl)OEtCN, (iPr) 2 NEt, CH 2 Cl 2 , rt (71%). Scheme 1. 7N,N-diisopropylehylamine ((iPr) 2 NEt) and 2-cyanoehtyl-N,N-

Kim, Eun Kyong

2011-01-01T23:59:59.000Z

229

A novel integrated structure of thin film GaN LED with ultra-low thermal resistance  

Science Journals Connector (OSTI)

This study proposes a novel packaging structure for vertical thin-GaN LED applications by integration of LED chip and silicon-based packaging process. The vertical thin film LED is...

Wen, Shih-Yi; Hu, Hung-Lieh; Tsai, Yao-Jun; Hsu, Chen-Peng; Lin, Re-Ching; Horng, Ray Hua

2014-01-01T23:59:59.000Z

230

Fabrication and Characterization of a GaN Light-emitting Diode (LED) with a Centered Island Cathode  

Science Journals Connector (OSTI)

Uniform spreading of injection current in light-emitting diodes (LEDs) is one of the crucial requirements for better device performances. It is reported that non-uniform current...

Park, Yun Soo; Lee, Hwan Gi; Yang, Chung-Mo; Kim, Dong-Seok; Bae, Jin-Hyuk; Cho, Seongjae; Lee, Jung-Hee; Kang, In Man

2012-01-01T23:59:59.000Z

231

Yu Gan, Godfrey Miller, Carl Boettiger 1.1.ReachReach SuperfluidSuperfluid StateState  

E-Print Network [OSTI]

#12;Gas GaloreGas Galore Yawwn. Watching Dan do everything is hard work So many tanks... So confused with helium gasPump chamber with helium gas (Actually, we only did this on cool(Actually, we only did oil50's equipment Liquid Nitrogen Fountain pieces Protective plastic guard THE DEWERTHE DEWER Why am I

232

Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin  

E-Print Network [OSTI]

N-based alloys may have some potential as thermoelectric materials at high temperature. It was found with the active thermoelectric cooling implemented on the same material system can improve the device performance to the thermal challenges. Apparently, the preferred thermoelectric material, in terms of integration

233

Innovational radiation sensor by integrating AL2O3:C optically stimulated luminescent dosemeter and GaN detectors  

Science Journals Connector (OSTI)

......dosimetry (i.e. an active dosemeter) or one...detectable dose and the active performance of the...various applications. MATERIALS AND METHODS alpha-Al2O3...by the ratio of cathode current to optical...could be operated in active mode. | Department...radiation effects Light Materials Testing Photochemistry......

Tai-Chang Chen; Kunakorn Poochinda; Thomas G. Stoebe

2006-09-01T23:59:59.000Z

234

Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors  

SciTech Connect (OSTI)

Two schemes of nucleation and growth of gallium nitride on Si(111) substrates are investigated and the structural and electrical properties of the resulting films are reported. Gallium nitride films grown using a 10{endash}500 nm-thick AlN buffer layer deposited at high temperature ({similar_to}1050{degree}C) are found to be under 260{endash}530 MPa of tensile stress and exhibit cracking, the origin of which is discussed. The threading dislocation density in these films increases with increasing AlN thickness, covering a range of 1.1 to {gt}5.8{times}10{sup 9}cm{sup {minus}2}. Films grown using a thick, AlN-to-GaN graded buffer layer are found to be under compressive stress and are completely crack free. Heterojunction field effect transistors fabricated on such films result in well-defined saturation and pinch-off behavior with a saturated current of {similar_to}525 mA/mm and a transconductance of {similar_to}100 mS/mm in dc operation. {copyright} 2001 American Institute of Physics.

Marchand, H.; Zhao, L.; Zhang, N.; Moran, B.; Coffie, R.; Mishra, U. K.; Speck, J. S.; DenBaars, S. P.; Freitas, J. A.

2001-06-15T23:59:59.000Z

235

Acceptor binding energies in GaN and AlN Francisco Mireles and Sergio E. Ulloa  

E-Print Network [OSTI]

of hydrogen on the conductivity of ZnO nanoparticles has implications for nanoscale optoelectronic devices of nanoparticles is a key requirement for practical applications of these materials for optoelectronic devices

Ulloa, Sergio E.

236

Méthodologie d'analyse de défaillance pour l'évaluation de la fiabilité de diodes électroluminescentes GaN.  

E-Print Network [OSTI]

??Ce mémoire s'inscrit dans la construction d'une méthodologie d'analyse de défaillance pour l'évaluation de la fiabilité de diodes électroluminescentes, par une approche basée sur l'analyse… (more)

Baillot, Raphaël

2011-01-01T23:59:59.000Z

237

Growth of 5 mm GaN Single Crystals at 750 °C from an Na?Ga Melt  

Science Journals Connector (OSTI)

Laser diodes using GaN-based III?V nitrides have been developed, and nitride semiconductor devices are now of considerable interest. ... When the inclusions were exposed to air, they reacted with water vapor in air and produced sodium hydroxide and small gallium metal droplets at the fracture surface of the crystal. ... The solubility of nitrogen in liquid sodium is extremely low (7.1 × 10-9 mol % N at 600 °C). ...

Masato Aoki; Hisanori Yamane; Masahiko Shimada; Seiji Sarayama; Francis J. DiSalvo

2001-02-03T23:59:59.000Z

238

Erbium-doped GaN optical amplifiers operating at 1.54 m R. Dahal,1,2  

E-Print Network [OSTI]

are not possible to attain either with Er-doped silica glasses or nar- row gap semiconductor materials such InGaAsP gain. Earlier reports addressed increasing the absorption cross section by introducing Yb3 in this wavelength range and optical signal absorption is expected to be negli- gible since the material band gap

Jiang, Hongxing

239

Growth and characterization of M-plane GaN and (In,Ga)N/GaN multiple quantum wells.  

E-Print Network [OSTI]

??Thema dieser Arbeit ist die Synthese von Wurtzit M-plane (In,Ga)N(1-100)-Heterostrukturen auf g-LiAlO2(100) mittels plasmaunterstützter Molekularstrahlepitaxie (MBE). Der Einfluß der Wachstumsbedingungen auf die strukturellen, morphologischen, und… (more)

Sun, Yue-Jun

2004-01-01T23:59:59.000Z

240

Optical polarization anisotrop in nonpolar GaN thin films due to crystal symmetry and anisotropic strain.  

E-Print Network [OSTI]

??Diese Arbeit befasst sich mit den optischen Eigenschaften von dünnen GaN-Schichten gewachsen in verschiedenen Orientierungen. Hierbei werden die optischen Eigenschaften von verspannten M- und A-plane… (more)

Misra, Pranob

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Fabrication of GaN nanowire arrays by confined epitaxy Xinyu Sun, Michael Fairchild, and Stephen D. Hersee  

E-Print Network [OSTI]

, Albuquerque, New Mexico 87106 and Department of Electrical and Computer Engineering, University of New Mexico, and Stephen D. Hersee Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, 1313 Goddard SE, Albuquerque, New Mexico 87106 Received 29 August 2006; accepted 26 October 2006

New Mexico, University of

242

Airports Soar to New Heights with Alternative Fuels | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Airports Soar to New Heights with Alternative Fuels Airports Soar to New Heights with Alternative Fuels Airports Soar to New Heights with Alternative Fuels February 22, 2011 - 2:27pm Addthis Shannon Brescher Shea Communications Manager, Clean Cities Program A recent flight to a conference inspired me to think about the impact of airports on our environment and society. Although modern planes have made it safe and fun to travel around the world, they use a vast amount of fuel. The petroleum used by the array of behind-the-scenes equipment, from shuttle buses to luggage carriers, adds up as well. Although Clean Cities doesn't address planes, our 87 local coalitions have helped airports limit their petroleum use in other ways, reducing their smog-forming and greenhouse gas emissions. A number of airports have adopted the use of alternative fuels and advanced

243

Airports Soar to New Heights with Alternative Fuels | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Airports Soar to New Heights with Alternative Fuels Airports Soar to New Heights with Alternative Fuels Airports Soar to New Heights with Alternative Fuels February 22, 2011 - 2:27pm Addthis Shannon Brescher Shea Communications Manager, Clean Cities Program A recent flight to a conference inspired me to think about the impact of airports on our environment and society. Although modern planes have made it safe and fun to travel around the world, they use a vast amount of fuel. The petroleum used by the array of behind-the-scenes equipment, from shuttle buses to luggage carriers, adds up as well. Although Clean Cities doesn't address planes, our 87 local coalitions have helped airports limit their petroleum use in other ways, reducing their smog-forming and greenhouse gas emissions. A number of airports have adopted the use of alternative fuels and advanced

244

DOE to Build Hydrogen Fuel Test Facility at West Virginia Airport |  

Broader source: Energy.gov (indexed) [DOE]

DOE to Build Hydrogen Fuel Test Facility at West Virginia Airport DOE to Build Hydrogen Fuel Test Facility at West Virginia Airport DOE to Build Hydrogen Fuel Test Facility at West Virginia Airport March 25, 2009 - 1:00pm Addthis Washington, DC - The Office of Fossil Energy's National Energy Technology Laboratory (NETL) today announced plans to construct and operate a hydrogen fuel production plant and vehicle fueling station at the Yeager Airport in Charleston, W.Va. The facility will use grid electricity to split water to produce pure hydrogen fuel. The fuel will be used by the airport's operations and the 130th Air Wing of the West Virginia Air National Guard. NETL will begin operations at the Yeager Airport facility in August 2009 and plans to conduct two years of testing and evaluation. The facility will be designed using "open architecture," allowing the capability to add

245

Relaxing the perimeter and high-density rules: implications for Washington Dulles International Airport  

Science Journals Connector (OSTI)

The Perimeter and High-Density Rules have been the foundation upon which the physically limited capacity of Ronald Reagan Washington National Airport has been allocated. The perimeter rule at National Airport requires nonstop scheduled airline flights from that airport to serve destinations within a 1250-mile perimeter. The distance limit was initially introduced for a combination of reasons including environmental conservation (especially with respect to noise nuisance) and the desire to offer some protection for other airports in the Washington DC area as they built up traffic to reach a critical mass. The US Senate has recently taken actions to adjust the perimeter rule at National Airport. Any major relaxing of the rule will have implications for the other major airports in the National Capital Region; namely Washington Dulles International Airport and Baltimore–Washington International Airport. The resultant knock-on effects of this development on the wider economy of the region is examined here. The main attention of the paper is on the impact of any major change in the perimeter rule on Washington Dulles International Airport, and on the subsequent knock-on effects this would have on the region's employment level and structure.

Kenneth Button; Peter Arena; Roger Stough

1999-01-01T23:59:59.000Z

246

E-Print Network 3.0 - airport ground support Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Source: Texas at Austin, University of - Center for Transportation Research Collection: Energy Storage, Conversion and Utilization 2 Paper Number: 109 Abstract--Airports are of...

247

E-Print Network 3.0 - airport market feasibility Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Source: Texas at Austin, University of - Center for Transportation Research Collection: Energy Storage, Conversion and Utilization 2 Amsterdam Multi-airport System Policy...

248

Combined Retrieval, Microphysical Retrievals and Heating Rates  

DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

Microphysical retrievals and heating rates from the AMIE/Gan deployment using the PNNL Combined Retrieval.

Feng, Zhe

249

Ground access to major airports in the United States : summary of present characteristics and evaluation of future requirements  

E-Print Network [OSTI]

Synopsis: The ground access problem at United States airports will be discussed in general terms. Those characteristics of airport users relative to ground transportation will be analyzed to provide a clear picture of the ...

Munds, Allan J.

1969-01-01T23:59:59.000Z

250

The Integrated Airport: Building a Successful NextGen Testbed  

ScienceCinema (OSTI)

This presentation will describe a unique public-private partnership - the Integrated Airport - that was created to engage in research and testing related to NextGen Technology deployment.  NextGen refers to the program that will be initiated to modernize the US National Airspace.  As with any major, multi-decade initiative, such as NextGen, integration of work efforts by multiple partners in the modernization is critical for success.  This talk will focus on the development of the consortium, how the consortium plans for NextGen initiatives, the series of technology demonstrations we have produced and plans for the future of NextGen testing and implementation. 

Christina Frederick-Recascino

2010-01-08T23:59:59.000Z

251

In May 2002, the Airport Technical Assistance Program, also known as AirTAP,  

E-Print Network [OSTI]

.revisor.leg.state.mn.us. This rule pro- vides runway length-based lighting require- ments as well as wind indicator and other through TALS. State funding for electrical maintenance is available by request. Wildlife Control Seminar October 17, 2002: Marshall Municipal Airport This workshop with provide information on airport wildlife

Minnesota, University of

252

Directions to the University of Connecticut Storrs Campus From Bradley International Airport  

E-Print Network [OSTI]

Directions to the University of Connecticut ­ Storrs Campus From Bradley International Airport: As you exit the airport take CT-20 towards I-91 (Hartford/Springfield) for about 4 miles. Take I-91 South miles. Take the I-84 East exit towards Boston for about 12.5 miles to exit 68 (Route 195). Travel south

Olshevsky, Vadim

253

IEEE TRANSACTIONS ON INTELLIGENT TRANSPORTATION SYSTEMS, IN PRESS, AUGUST 2013 1 Dynamic Control of Airport Departures  

E-Print Network [OSTI]

Rate Control at Boston airport in 2011, and the development of a decision-support tool for its illustrates this behavior for the most frequently used runway configuration at Boston Logan International of Airport Departures: Algorithm Development and Field Evaluation Ioannis Simaiakis, Melanie Sandberg

Gummadi, Ramakrishna

254

ARM - Feature Stories and Releases Article  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

, 2011 [Feature Stories and Releases] , 2011 [Feature Stories and Releases] AMIE, What You Wanna Do? Bookmark and Share Data spanning the Maldives to Papua New Guinea will help scientists analyze far-reaching tropical weather cycle This view shows a subset of the ARM Mobile Facility instruments operating at the Gan Island airport for the AMIE campaign. To see the complete collection, see the image set in Flickr. This view shows a subset of the ARM Mobile Facility instruments operating at the Gan Island airport for the AMIE campaign. To see the complete collection, see the image set in Flickr. Like the lyrics in the song from the 1970s, the ARM Mobile Facility is going to stay in the Maldives "for a while, maybe longer"-about six months, actually-in support of the ARM Madden Julian Oscillation (MJO)

255

Monitoring of the Airport Calibration Pads at Walker Field, Grand Junction,  

Broader source: Energy.gov (indexed) [DOE]

Monitoring of the Airport Calibration Pads at Walker Field, Grand Monitoring of the Airport Calibration Pads at Walker Field, Grand Junction, Colorado, for Long-Term Radiation Variations (August 1978) Monitoring of the Airport Calibration Pads at Walker Field, Grand Junction, Colorado, for Long-Term Radiation Variations (August 1978) Monitoring of the Airport Calibration Pads at Walker Field, Grand Junction, Colorado, for Long-Term Radiation Variations (August 1978) Monitoring of the Airport Calibration Pads at Walker Field, Grand Junction, Colorado, for Long-Term Radiation Variations (August 1978) More Documents & Publications Field Calibration Facilities for Environmental Measurement of Radium, Thorium, and Potassium (October 2013) Long-Term Surveillance Operations and Maintenance Fiscal Year 2013 Year-End Summary Report

256

Los Alamos Shows Airport Security Technology at Work  

SciTech Connect (OSTI)

Los Alamos scientists have advanced a Magnetic Resonance Imaging (MRI) technology that may provide a breakthrough for screening liquids at airport security. They've added low-power X-ray data to the mix, and as a result have unlocked a new detection technology. Funded in part by the Department of Homeland Security's Science and Technology Directorate, the new system is named MagRay. The goal is to quickly and accurately distinguish between liquids that visually appear identical. For example, what appears to be a bottle of white wine could potentially be nitromethane, a liquid that could be used to make an explosive. Both are clear liquids, one would be perfectly safe on a commercial aircraft, the other would be strictly prohibited. How to tell them apart quickly without error at an airport security area is the focus of Michelle Espy, Larry Schultz and their team. In this video, Espy and the MagRay team explain how the new technology works, how they've developed an easy operator interface, and what the next steps might be in transitioning this technology to the private sector.

Espy, Michelle; Schultz, Larry; Hunter, James

2013-11-25T23:59:59.000Z

257

Differential-ground-motion array at Hollister Municipal Airport, California  

SciTech Connect (OSTI)

This report describes the differential array of seismometers recently installed at the Hollister, California, Municipal Airport. Such an array of relatively closely spaced seismometers has already been installed in El Centro and provided useful information for both engineering and seismological applications from the 1979 Imperial Valley earthquake. Differential ground motions, principally due to horizontally propagating surface waves, are important in determining the stresses in such extended structures as large mat foundations for nuclear power stations, dams, bridges and pipelines. Further, analyses of the records of the 1979 Imperial Valley earthquake from the differential array have demonstrated the utility of short-baseline array data in tracking the progress of the rupture wave front of an earthquake. 5 refs., 4 figs.

Bycroft, G.N.

1983-01-01T23:59:59.000Z

258

Airport snow removal is a critical winter operation in Minnesota. To ensure effective  

E-Print Network [OSTI]

training program and do we document our training activities? · Do we have good weather forecast- ing, visit www.AirTAP.umn.edu. A publication of the Airport Technical Assistance Program of the Center

Minnesota, University of

259

Application of Artificial Neural Network Forecasts to Predict Fog at Canberra International Airport  

Science Journals Connector (OSTI)

The occurrence of fog can significantly impact air transport operations, and plays an important role in aviation safety. The economic value of aviation forecasts for Sydney Airport alone in 1993 was estimated at $6.8 million (Australian dollars) ...

Dustin Fabbian; Richard de Dear; Stephen Lellyett

2007-04-01T23:59:59.000Z

260

Airport surface traffic optimization and simulation in the presence of uncertainties  

E-Print Network [OSTI]

Surface traffic congestion causes significant taxi delays and long queues for takeoffs at busy airports, increasing operational and environmental costs. These impacts may be mitigated by optimizing runway and taxiway ...

Lee, Hanbong

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

A linear programming solution to the gate assignment problem at airport terminals  

E-Print Network [OSTI]

This research solves the flight-to-gate assignment problem at airports in such a way as to minimize, or at least reduce, walking distances for passengers inside terminals. Two solution methods are suggested. The first is ...

Mangoubi, Rami

1980-01-01T23:59:59.000Z

262

How to prepare an airport for the Olympic Games? : transportation of the Olympic Family Members  

E-Print Network [OSTI]

This thesis describes and assesses the preparation of Athens International Airport for and its performance during the Olympic Games in 2004. The analysis includes infrastructural modifications made and organizational ...

Kassens, Eva

2005-01-01T23:59:59.000Z

263

Evolution of domestic traffic and fares at the top 200 US airports between 1990 and 2008  

E-Print Network [OSTI]

The main objective of this thesis is to analyze the evolution of domestic Origin- Destination (O-D) traffic and fares at the Top 200 airports in the United States between 1990 and 2008. The impetus behind this research is ...

Ben Abda, Mehdi

2010-01-01T23:59:59.000Z

264

Customer relations management: service operations: simulation's role in baggage screening at the airports: a case study  

Science Journals Connector (OSTI)

The Aviation and Transportation Security Act passed by Congress in November, 2001 required the nation's airports to perform 100% checked baggage screening by December 31, 2002. To determine the impact of this requirement on its operations, Lambert St. ...

Suna Hafizogullari; Gloria Bender; Cenk Tunasar

2003-12-01T23:59:59.000Z

265

Development of techniques for rapidly assessing the local air quality impacts of airports  

E-Print Network [OSTI]

The combustion of fossil fuels for aviation activity harms air quality and human health near airports through the production of PM2.5. Currently, dispersion models can assess these local-scale (distances ~10 km) impacts, ...

Lee, Gideon (Gideon Luther)

2012-01-01T23:59:59.000Z

266

Observation and Analysis of Departure Planning Operations at Boston Logan International Airport  

E-Print Network [OSTI]

The Departure Planner (DP) is a concept for a decision-aiding tool that is aimed at improving the departure operations performance at major congested airports. In order to support the development of the DP tool, the flow ...

Idris, Husni R.

2011-10-14T23:59:59.000Z

267

Energy, Shading and Daylighting Analysis for the Austin Bergstrom International Airport Terminal  

E-Print Network [OSTI]

Austin Airport included large glass areas for viewing arriving and departing planes, the sky, and the surrounding terrain. The glass was envisioned to provide quality natural lighting for the terminal during daylight hours in order to improve the quality...

Holder, L. M. III; Holder, L. M. IV

2002-01-01T23:59:59.000Z

268

Getting to Osnabrck 1 Flying to Mnster / Osnabrck Int. Airport (FMO)  

E-Print Network [OSTI]

Getting to Osnabrück 1 Flying to Münster / Osnabrück Int. Airport (FMO) Although no transatlantic, but it also has no direct transatlantic flights. Many discount airlines -- such as Ryan Air -- fly to Bremen

Osnabrück, Universität

269

Public Funding of Airport Incentives: The Efficacy of the Small Community Air Service Development Grant (SCASDG) Program  

E-Print Network [OSTI]

As U.S. airlines began to restrict available domestic capacity at smaller airports in 2008 as a result of higher

Wittman, Michael D.

2014-01-08T23:59:59.000Z

270

Impact of aircraft emissions on air quality in the vicinity of airports. Volume I. Recent airport measurement programs, data analyses, and sub-model development. Final report Jan78-Jul 80  

SciTech Connect (OSTI)

This report documents the results of the Federal Aviation Administration (FAA)/Environmental Protection Agency (EPA) air quality study which has been conducted to assess the impact of aircraft emissions of carbon monoxide (CO), hydrocarbons (HC), and oxides of nitrogen (NOx) in the vicinity of airports. This assessment includes the results of recent modeling and monitoring efforts at Washington National (DCA), Los Angeles International (LAX), Dulles International (IAD), and Lakeland, Florida airports and an updated modeling of aircraft generated pollution at LAX, John F. Kennedy (JFK) and Chicago O'Hare (ORD) airports. The Airport Vicinity Air Pollution (AVAP) model which was designed for use at civil airports was used in this assessment. In addition the results of the application of the military version of the AVAP model the Air Quality Assessment Model (AQAM), are summarized.

Yamartino, R.J.; Smith, D.G.; Bremer, S.A.; Heinold, D.; Lamich, D.

1980-07-01T23:59:59.000Z

271

Microsoft PowerPoint - Pittsburgh International Airport to Morgantown Site Directions.ppt [Compatibility Mode]  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Pittsburgh International Airport to Pittsburgh International Airport to Morgantown Site, Morgantown, WV 1. Exit airport on US-60S toward Pittsburgh/I-79S (follow signs to Pittsburgh, proceed ~7 miles). 2. Merge onto US-22E/US-30E toward Pittsburgh (proceed ~3 miles). 3. Merge onto I-79S toward WASHINGTON, PA (proceed ~25 miles). I-70 East merges with I-79, continue on I-70E/I-79S. 4. Merge RIGHT at Exit 21 onto I-79S toward MORGANTOWN, WV (proceed ~39 miles). 5 T k EXIT 155 STAR CITY EXIT t WV 7 WEST VIRGINIA UNIVERSITY 5. Take EXIT 155, STAR CITY EXIT at WV-7, WEST VIRGINIA UNIVERSITY. 6. Turn LEFT onto CHAPLIN HILL RD. Proceed to 2 nd light (US-19 intersection). 7. Bear RIGHT onto US-19; move into left lane; proceed to first light past bridge. 8. Turn left onto BOYERS AVE. 9. At intersection turn RIGHT onto UNIVERSITY AVE.

272

GRR/Section 13-FD-d - Airport Evaluation Process | Open Energy Information  

Open Energy Info (EERE)

3-FD-d - Airport Evaluation Process 3-FD-d - Airport Evaluation Process < GRR Jump to: navigation, search GRR-logo.png GEOTHERMAL REGULATORY ROADMAP Roadmap Home Roadmap Help List of Sections Section 13-FD-d - Airport Evaluation Process 13FDDAirportEvaluationProcess.pdf Click to View Fullscreen Contact Agencies Federal Aviation Administration United States Department of Defense Regulations & Policies 49 USC 44718: Structures Interfering with Air Commerce 49 USC 40103: Sovereignty & Use of Airspace Pub. L. 111-383 - the "Ike Skelton National Defense Authorization Act for Fiscal Year 2011 14 CFR 77 - Safe, Efficient Use, and Preservation of the Navigable Airspace Triggers None specified Click "Edit With Form" above to add content 13FDDAirportEvaluationProcess.pdf Error creating thumbnail: Page number not in range.

273

Improving Building Comfort and Energy Savings of the McKenzie Airport Terminal by Maintaining and Improving Pneumatic Control Systems  

E-Print Network [OSTI]

McKenzie Airport Terminal is located at Easterwood Airport, which is owned and operated by Texas A&M University. It was built in 1988. Most all HVAC equipment, which includes boiler, chiller, pumps, AHUs and exhaust fans, due to lack of maintenance...

Liu, C.; Bruner, H. L.; Deng, S.; Brundidge, T.; Turner, W. D.; Claridge, D. E.

2004-01-01T23:59:59.000Z

274

660 IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, VOL. 50, NO. 3, AUGUST 2008 Responses of Airport Runway Lighting System to  

E-Print Network [OSTI]

, Senior Member, IEEE Abstract--A test airport runway lighting system, including a buried cable protected that the model is unable to predict cable currents and voltages in the test system, presumably due to neglecting, Bejleri et al. [1] conducted an experimental study of the test airport runway system. In their ex

Florida, University of

275

96 IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, VOL. 46, NO. 1, FEBRUARY 2004 Triggered Lightning Testing of an Airport  

E-Print Network [OSTI]

Lightning Testing of an Airport Runway Lighting System Mirela Bejleri, Vladimir A. Rakov, Fellow, IEEE rods, lighting system, lightning protection, triggered lightning. I. INTRODUCTION THE EXPERIMENTS Abstract--The interaction of rocket-triggered lightning with an airport runway lighting system has been

Florida, University of

276

Quantifying the air quality-CO2 tradeoff potential for airports  

Science Journals Connector (OSTI)

Abstract Aircraft movements on the airport surface are responsible for CO2 emissions that contribute to climate change and other emissions that affect air quality and human health. While the potential for optimizing aircraft surface movements to minimize CO2 emissions has been assessed, the implications of CO2 emissions minimization for air quality have not been quantified. In this paper, we identify conditions in which there is a tradeoff between CO2 emissions and population exposure to O3 and secondary PM2.5 – i.e. where decreasing fuel burn (which is directly proportional to CO2 emissions) results in increased exposure. Fuel burn and emissions are estimated as a function of thrust setting for five common gas turbine engines at 34 US airports. Regional air quality impacts, which are dominated by ozone and secondary PM2.5, are computed as a function of airport location and time using the adjoint of the GEOS-Chem chemistry-transport model. Tradeoffs between CO2 emissions and population exposure to PM2.5 and O3 occur between 2–18% and 5–60% of the year, respectively, depending on airport location, engine type, and thrust setting. The total duration of tradeoff conditions is 5–12 times longer at maximum thrust operations (typical for takeoff) relative to 4% thrust operations (typical for taxiing). Per kilogram of additional fuel burn at constant thrust setting during tradeoff conditions, reductions in population exposure to PM2.5 and O3 are 6–13% and 32–1060% of the annual average (positive) population exposure per kilogram fuel burn, where the ranges encompass the medians over the 34 airports. For fuel burn increases due to thrust increases (i.e. for constant operating time), reductions in both PM2.5 and O3 exposure are 1.5–6.4 times larger in magnitude than those due to increasing fuel burn at constant thrust (i.e. increasing operating time). Airports with relatively high population exposure reduction potentials – which occur due to a combination of high duration and magnitude of tradeoff conditions – are identified. Our results are the first to quantify the extent of the tradeoff between CO2 emissions and air quality impacts at airports. This raises the possibility of reducing the air quality impacts of airports beyond minimizing fuel burn and/or optimizing for minimum net environmental impact.

Akshay Ashok; Irene C. Dedoussi; Steve H.L. Yim; Hamsa Balakrishnan; Steven R.H. Barrett

2014-01-01T23:59:59.000Z

277

Cost Benefit Analysis Modeling Tool for Electric vs. ICE Airport Ground Support Equipment – Development and Results  

SciTech Connect (OSTI)

This report documents efforts to develop a computer tool for modeling the economic payback for comparative airport ground support equipment (GSE) that are propelled by either electric motors or gasoline and diesel engines. The types of GSE modeled are pushback tractors, baggage tractors, and belt loaders. The GSE modeling tool includes an emissions module that estimates the amount of tailpipe emissions saved by replacing internal combustion engine GSE with electric GSE. This report contains modeling assumptions, methodology, a user’s manual, and modeling results. The model was developed based on the operations of two airlines at four United States airports.

James Francfort; Kevin Morrow; Dimitri Hochard

2007-02-01T23:59:59.000Z

278

Top-gate thin-film transistors based on GaN channel layer Rongsheng Chen, Wei Zhou, and Hoi Sing Kwok  

E-Print Network [OSTI]

exhibit good electrical performance such as field effect mobility of 1 cm2 /Vs, threshold voltage of �0 and poly-Si TFTs.6­8 However, the poor electrical sta- bility of ZnO-based TFTs is still a main issue mobility (6 � 10�2 cm2 /Vs) and low on/off current ratio (3 � 103 ), due to local- ized gap states in Ga

279

Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy  

E-Print Network [OSTI]

B 22, 1145 ?2004?. A. Armstrong, A. R. Arehart, D. Green, U.San Diego, 1992?. A. Armstrong, A. R. Arehart, and S. A.molecular beam epitaxy A. Armstrong Department of Electrical

Armstrong, A; Poblenz, C; Green, D S; Mishra, U K; Speck, J S; Ringel, S A

2006-01-01T23:59:59.000Z

280

An impact of bias and structure dependent L$$_\\mathrm{SD}$$SD variation on the performance of GaN HEMTs based biosensor  

Science Journals Connector (OSTI)

In this paper, we discussed the effect of different bias and structures in relation to S-D distance variation on the device electrical and expected biosensing performance. Devices with source to drain length ( Keywords: Biosensors, HEMTs, Response time, Sensitivity, Transconductance

Niketa Sharma, Diksha Joshi, Nidhi Chaturvedi

2014-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

In Situ Magnetic Field-Assisted Low Temperature Atmospheric Growth of GaN Nanowires via the Vapor–Liquid–Solid Mechanism  

Science Journals Connector (OSTI)

The magnetic field strength was controlled by varying the distance between the magnet and the substrate to ultimately have three different magnetic field strengths of ?0.25, 0.43, and 0.80 T, as measured by a Gauss meter at room temperature. ... The vertical dotted lines show three clear peaks I1, I2, and I3 (with increasing energy). ... One hundred percent magnetic alignment of nanostructures to the imposed magnetic fields was achieved by applying a low external magnetic field of 200 Oe. ...

Jun Sik Kim; Bhaskar Chandra Mohanty; Chan Su Han; Seung Jun Han; Gwang Heon Ha; Liwei Lin; Yong Soo Cho

2013-10-11T23:59:59.000Z

282

Importance of excitonic effects and the question of internal electric fields in stacking faults and crystal phase quantum discs: The model-case of GaN  

E-Print Network [OSTI]

. Pemasiri, M. Montazeri, R. Gass, L. M. Smith, H. E. Jackson, J. Yarrison-Rice, S. Paiman, Q. Gao, H. Hoe Tan, C. Jagadish, X. Zhang, and J. Zou, Nano Lett. 9, 648 (2009). 14J. Ristic´, E. Calleja, M. A. S#2;anchez-Garc#2;?a, J. M. Ulloa, J. S#2;anchez- P#2... , Phys. Rev. B 57, R9427 (1998). 37H. Y. Xu, Z. Liu, Y. Y. Rao, X. T. Zhang, and S. K. Hark, Appl. Phys. Lett. 95, 133108 (2009). 053512-5 P. Corfdir and P. Lefebvre J. Appl. Phys. 112, 053512 (2012) ...

Corfdir, Pierre; Lefebvre, Pierre

2012-01-01T23:59:59.000Z

283

Charakterisierung und Präparation von GaN und Herstellung von In-Plane-Gate Transistoren in AlxGa1-xN/GaN Heterostrukturen.  

E-Print Network [OSTI]

??Gegenstand der Arbeit sind GaN-Volumenmaterial und AlxGa1-xN/GaN HEMTs (high electron mobility transistor), welche ein zweidimensionales Elektronengas (2DEG) besitzen. Die Materialien wurden durch elektrische Messungen, insbesondere… (more)

Ebbers, André

2003-01-01T23:59:59.000Z

284

Doping of MBE grown cubic GaN on 3C-SiC (001) by CBr4 ,E. Tschumak1  

E-Print Network [OSTI]

source. The CBr4 beam equivalent pressure was established by a needle valve and was varied between 2x10 has a very low diffusion coefficient [3]. It is also known from p-doping in (Al)GaAs that carbon4 beam equivalent pressure (BEP) was established by a needle valve and was varied between 2x10

As, Donat Josef

285

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect (OSTI)

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

286

For any Minnesota airport, winter is a hard time of year. Snow storms, freezing rain,  

E-Print Network [OSTI]

of the Airport Technical Assistance Program of the Center for Transportation Studies at the University Board, and Minnesota Local Technical Assistance Program. For more information about the expo visit www safely plowed in addition to their countless other winter weather responsibilities. At this year

Minnesota, University of

287

An investigation of the information needs of air passengers traveling to the airport  

E-Print Network [OSTI]

, 1998). As the popularity of air travel continues to increase, the number of trips to and from the airport will inevitably rise also. Passengers will need accurate information about all modes on a total trip basis. This includes the modes of access...

Burdette, Debra Arlene

2000-01-01T23:59:59.000Z

288

High-Quality, Low-Cost Bulk Gallium Nitride Substrates  

Broader source: Energy.gov [DOE]

To develop ESG into a viable bulk growth process for GaN that is more scalable to large-area wafer manufacturing and able to produce cost-effective, high-quality bulk GaN substrates.

289

Electronic properties of gallium nitride nanowires  

E-Print Network [OSTI]

This thesis presents a systematic study of the electrical transport in GaN nanowires. Particularly, the effect of the surrounding dielectric on the conductivity of GaN nanowires is experimentally shown for the first time. ...

Yoon, Joonah

2008-01-01T23:59:59.000Z

290

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

291

Fourier analysis of light scattered by elongated scatterers Zeev Schiffer, Yosef Ashkenazy, Reuven Tirosh, and Mordechai Deutsch  

E-Print Network [OSTI]

Tirosh, and Mordechai Deutsch Biological stimulation of living cells is sometimes associated-Gan 52900, Israel. M. Deutsch's

Ashkenazy, Yossi "Yosef"

292

2009 Minerals Yearbook U.S. Department of the Interior  

E-Print Network [OSTI]

As and gallium nitride (GaN) and was used in integrated circuits (ICs) and optoelectronic devices [laser diodes

293

Transistor-Based Miniature Microwave-Drill Applicator Yehuda Meir and Eli Jerby*  

E-Print Network [OSTI]

. Recent developments of gallium-nitride (GaN) and silicon- carbide (SiC) transistors have increased

Jerby, Eli

294

THERMAL STUDY OF A GaN-BASED HEMT A Dissertation  

E-Print Network [OSTI]

of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) under bias conditions. An experimental

Sen, Mihir

295

Employment after UC Graduation: 2005 2007: Assistant Professor, Department of Electrical Engineering, California Polytechnic State  

E-Print Network [OSTI]

and Educational Activity on Gallium-Nitride (GaN) Lasers and Light Emitting Diodes (LEDs)" International Journal

Boolchand, Punit

296

The effects of capacity discipline on smaller U.S. airports : trends in service, connectivity, and fares  

E-Print Network [OSTI]

After decades of growth in domestic flights, seats, and available seat-miles, airlines reduced capacity at airports across the United States from 2007-2012 in response to a global economic downturn and high and volatile ...

Wittman, Michael D. (Michael David)

2014-01-01T23:59:59.000Z

297

Why some airport-rail links get built and others do not : the role of institutions, equity and financing  

E-Print Network [OSTI]

The thesis seeks to provide an understanding of reasons for different outcomes of airport ground access projects. Five in-depth case studies (Hongkong, Tokyo-Narita, London- Heathrow, Chicago- O'Hare and Paris-Charles de ...

Nickel, Julia, S.M. Massachusetts Institute of Technology

2011-01-01T23:59:59.000Z

298

ATLAS ATLAS ATLAS ATLAS  

E-Print Network [OSTI]

traces August 10, 2000 DPF2000 A Novel Optical Package for the ATLAS Pixel Detector (page 8) K.K. GanATLAS ATLAS ATLAS ATLAS A Novel Optical Package for the ATLAS Pixel Detector K.K. Gan The Ohio Summary August 10, 2000 DPF2000 A Novel Optical Package for the ATLAS Pixel Detector (page 1) K.K. Gan

Gan, K. K.

299

ATLAS ATLAS ATLAS ATLAS  

E-Print Network [OSTI]

ATLAS ATLAS ATLAS ATLAS Status of Optical Electronics K.K. Gan Ohio State University June 14, 2000 ATLAS Pixel Week June 14, 2000 ATLAS Pixel Week Status of Optical Electronics (page 1) K.K. Gan Ohio State University #12; ATLAS ATLAS ATLAS ATLAS Opto­electronics Team Ohio State University: K.K. Gan

Gan, K. K.

300

Joint ATLAS/CMS SLHC Opto WG 1 March 5, 2010  

E-Print Network [OSTI]

Joint ATLAS/CMS SLHC Opto WG 1 March 5, 2010 K.K. Gan Status of the Development of On ATLAS/CMS SLHC Opto WG 2 Outline Introduction Current work with IBL Schedule K.K. Gan #12;K.K. Gan Joint ATLAS/CMS SLHC Opto WG 3 Introduction A proposal to develop on-detector array-based opto

Gan, K. K.

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Testing Protocols and Results: Airport Sound Program Experience and BPI-Resnet Development  

Broader source: Energy.gov (indexed) [DOE]

Testing Protocols & Results: Testing Protocols & Results: Airport Sound Program Experience and BPI/RESNET Development Spring 2012 Residential Energy Efficiency Stakeholder Meeting: Combustion Safety in Tight Houses Jim Fitzgerald Center for Energy and Environment Building Performance Institute Page 2  Weatherization, custom windows & central air conditioning  Attic insulation, wall insulation, and attic air sealing - borrowed specs from energy programs and used weatherization contractors  Average house leakage: 7.8 ACH50 before 5.4 ACH50 after MSP secret: this Airport Sound Program does weatherization work to reduce sound All Tightening of Existing Homes Can Affect Combustion Appliance Safety Tightening work was done on 3000 homes with no testing, what could possibly go wrong?

302

Vibration and rattle impact due to low frequency noise investigated at Dulles airport  

Science Journals Connector (OSTI)

A noise study was conducted at Washington Dulles International Airport to further investigate the noise and vibration impact of thrust reversers and start of takeoff roll on communities near runways. Two different houses located on the airport property were instrumented with outdoor and indoor microphones and accelerometers mounted inside on walls windows and floor. This presentation will discuss both the experimental design and data obtained from the two different structures. Correlations between plane types outdoor signatures and acceleration levels are considered. The outdoor signatures and acceleration levels are used to investigate the conditions under which rattle of a loosely coupled window is observed. Additionally the design of a subsequent subjective study to examine the effects of rattle on human perception will be discussed. The combination of the objective measurements with the results of the subjective study is intended to give a better understanding of community impact due to airport noise. [Work is supported by the Federal Aviation Administration and the Exploratory and Foundational Program of the Applied Research Laboratory Penn State University.

2005-01-01T23:59:59.000Z

303

Microsoft PowerPoint - To NETL Pittsburgh Site from the Pittsburgh International Airport Directions.ppt [Compatibility Mode]  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

the Pittsburgh International Airport the Pittsburgh International Airport 1. Exit airport and follow signs for PITTSBURGH, which will take you onto ROUTE 60 SOUTH. 2. ROUTE 60 becomes ROUTE 22-30, also know as I-279 the "PARKWAY WEST." 3. Stay on Route 22-30/I-279 the "PARKWAY WEST" until you reach EXIT 5B, labeled TRUCK ROUTE 19 SOUTH/ROUTE 51 SOUTH UNIONTOWN Note: This exit is on the FAR RIGHT 19 SOUTH/ROUTE 51 SOUTH, UNIONTOWN. Note: This exit is on the FAR RIGHT just BEFORE the FORT PITT TUNNEL - do not go into the Tunnel. 4. Continue down ROUTE 51 SOUTH for approximately 7.5 miles. 5. Look for a CVS Pharmacy on the right-hand side of the road. SLOW DOWN since you will soon be exiting off ROUTE 51 SOUTH at the CLOVERLEAF EXIT. 6. After passing CVS (2.5 miles) take the very first road to your RIGHT.

304

EA-2000: Proposed Land Transfer to Develop a General Aviation Airport at the East Tennessee Technology Park Heritage Center, Oak Ridge, Tennessee  

Broader source: Energy.gov [DOE]

DOE is preparing an EA to assess potential environmental impacts of the proposed land transfer to the Metropolitan Knoxville Airport Authority for the development of a general aviation airport at the East Tennessee Technology Park Heritage Center, in Oak Ridge, Tennessee. Public Comment Opportunities None available at this time. Documents Available for Download No downloads found for this office.

305

Application of a pedestrian portal monitor at Madrid International Airport in Spain  

Science Journals Connector (OSTI)

Three pedestrian portal monitor systems, designed to detect illicit trafficking or inadvertent movement of radioactive materials carried by passengers at airports, have been evaluated. The systems were supplied by three manufacturers: Bicron, Exploranium and Thermo-Eberline. In an initial evaluation, conducted at the Laboratory of Nuclear Engineering of the School of Civil Engineering, it was observed that the FHT-1372 system manufactured by Thermo-Eberline gave a more sensitive response and allowed the measurement of total photon dose rate and artificial photon dose rate. Therefore, this system was installed at Barajas International Airport in Madrid in 2002 for a period of 108 days in order to select an appropriate investigation level (defined as the radiation level that is selected as the trigger for further investigation). During this period 1,339,931 passengers were screened and a total of 39 alarms were triggered, 5 of which with a value 10 times the mean value of the natural background from photon radiation (which was 85 nSv/h), and no alarms exceeded 100 ?Sv/h at 1 m distance, which is the level of response for legal transport of radioactive materials set by the International Atomic Energy Agency (IAEA). An investigation level of approximately 1.3 times the natural background was finally selected. This value coincides with the results obtained in the ITRAP (Illicit Trafficking Radiation Detection Assessment Program) carried out by the IAEA.

Ll. Pujol; J.A. Gonzalez-Gonzalez; M.J. Suarez-Navarro

2011-01-01T23:59:59.000Z

306

St. Louis Airport site environmental report for calendar year 1989, St. Louis, Missouri  

SciTech Connect (OSTI)

The environmental monitoring program, which began in 1984, continued during 1989 at the St. Louis Airport Site (SLAPS) in St. Louis County, Missouri. SLAPS and its vicinity properties, including ditches north and south of the site, were designated for cleanup as part of the Formerly Utilized Sites Remedial Action Program (FUSRAP), a United States Department of Energy (DOE) program to identify and decontaminate or otherwise control sites where residual radioactive material remains from the early years of the nation's atomic energy program. The monitoring program at SLAPS measures radon concentrations in air; external gamma dose rates; and uranium, thorium, and radium concentrations in surface water, groundwater, and sediment. Additionally, several nonradiological parameters are measured in groundwater. To assess the potential effect of SLAPS on public health, the potential radiation dose was estimated for a hypothetical maximally exposed individual. This report presents the findings of the environmental monitoring program conducted at the St. Louis Airport Site (SLAPS) during calendar year 1989. 19 refs., 13 figs., 14 tabs.

Not Available

1990-05-01T23:59:59.000Z

307

St. Louis Airport site: Annual site environmental report, Calendar Year 1986. [FUSRAP  

SciTech Connect (OSTI)

During 1986, the environmental monitoring program was continued at the St. Louis Airport Site (SLAPS) in St. Louis County, Missouri. The ditches north and south of the site were designated for cleanup as part of the Formerly Utilized Sites Remedial Action Program (FUSRAP), a United States Department of Energy (DOE) program to identify, decontaminate, or control sites where residual radioactive material remains from the early years of the nation's atomic energy program. The site is currently controlled by the St. Louis Airport Authority. The monitoring program measures radon gas concentrations in air; external gamma dose rates; and uranium, thorium, and radium concentrations in surface water, groundwater, and sediment. The radiation dose was calculated for the maximally exposed individual. Based on the scenario described in this report, the maximally exposed individual would receive an external exposure approximately equivalent to 4.7 percent of the DOE radiation protection standard of 100 mrem/yr. The dose to the population within an 80-km (50-mi) radius of the SLAPS that would result from radioactive materials present at the site would be indistinguishable from the dose the population would receive from naturally occurring radioactive sources. 12 refs., 5 figs., 10 tabs.

Not Available

1987-05-01T23:59:59.000Z

308

Public funding of airport incentives in the United States: The efficacy of the Small Community Air Service Development Grant program  

Science Journals Connector (OSTI)

Abstract As U.S. airlines began to restrict available domestic capacity at smaller airports in 2008 as a result of higher fuel prices and an economic downturn, these airports have increasingly started to rely on incentive packages composed of revenue guarantees, waived or reduced airport use fees, marketing support, or direct subsidies to attract new service. There are two main federal programs that provide funding for such incentives for small U.S. airports: the Essential Air Service (EAS) program and the Small Community Air Service Development Grant (SCASDG) program. While the EAS program has received considerable academic attention, there has been no comprehensive analysis of the success of SCASDG recipients in attracting and retaining their targeted air service. Using a metric of SCASD grant success, this paper evaluates the outcomes of 115 SCASD grantees from 2006 to 2011. In each year, fewer than half of the grant recipients were ultimately successful in meeting the goals of their proposal. Several case studies suggest that successful grantees often had significant community or airline support prior to submitting their grant and were located in slightly larger-than-average communities. Further careful consideration is necessary to determine whether reform of the SCASDG program is warranted to more effectively support the development of small community air service in the United States.

Michael D. Wittman

2014-01-01T23:59:59.000Z

309

Hot-standby for operational MetNet system used by Air Traffic Control (LVNL) at Amsterdam Airport Schiphol.  

E-Print Network [OSTI]

Hot-standby for operational MetNet system used by Air Traffic Control (LVNL) at Amsterdam Airport) patterns and OS abstraction library. Java Applet for remote operation and configuration. In commercial provider. They provide integrated design, build and operate solutions to large multi-national clients

Haak, Hein

310

Environmental assessment of the thermal neutron activation explosive detection system for concourse use at US airports  

SciTech Connect (OSTI)

This document is an environmental assessment of a system designed to detect the presence of explosives in checked airline baggage or cargo. The system is meant to be installed at the concourse or lobby ticketing areas of US commercial airports and uses a sealed radioactive source of californium-252 to irradiate baggage items. The major impact of the use of this system arises from direct exposure of the public to scattered or leakage radiation from the source and to induced radioactivity in baggage items. Under normal operation and the most likely accident scenarios, the environmental impacts that would be created by the proposed licensing action would not be significant. 44 refs., 19 figs., 18 tabs.

Jones, C.G.

1990-08-01T23:59:59.000Z

311

Forecast-Based Decision Support for San Francisco International Airport: A NextGen Prototype System That Improves Operations during Summer Stratus Season  

E-Print Network [OSTI]

During summer, marine stratus encroaches into the approach to San Francisco International Airport (SFO) bringing low ceilings. Low ceilings restrict landings and result in a high number of arrival delays, thus impacting ...

Reynolds, David W.

312

Final Environmental Assessment for Proposed Closure of the Airport Landfills Within Technical Area 73 at Los Alamos National Laboratory, Los Alamos, New Mexico  

Broader source: Energy.gov (indexed) [DOE]

15 15 Final Environmental Assessment for Proposed Closure of the Airport Landfills Within Technical Area 73 at Los Alamos National Laboratory, Los Alamos, New Mexico May 22, 2005 Department of Energy National Nuclear Security Administration Los Alamos Site Office Final EA for Proposed Closure of the Airport Landfills within TA-73 at LANL Page iii of viii Contents Acronyms and Terms .................................................................................................................. vi 1.0 Purpose and Need ................................................................................................. 1 1.1 Introduction.............................................................................................................

313

Letter Report Yucca Mountain Environmental Monitoring Systems Initiative - Air Quality Scoping Study for Tonopah Airport, Nye County, Nevada  

SciTech Connect (OSTI)

The Desert Research Institute (DRI) is performing a scoping study as part of the U.S. Department of Energy's Yucca Mountain Environmental Monitoring Systems Initiative (EMSI). The main objective is to obtain baseline air quality information for Yucca Mountain and an area surrounding the Nevada Test Site (NTS). Air quality and meteorological monitoring and sampling equipment housed in a mobile trailer (shelter) is collecting data at eight sites outside the NTS, including Ash Meadows National Wildlife Refuge (NWR), Tonopah Airport, Beatty, Rachel, Caliente, Pahranagat NWR, Crater Flat, and the Tonopah Airport, and at four sites on the NTS (Engelbrecht et al., 2007a-d). The trailer is stationed at any one site for approximately eight weeks at a time. This letter report provides a summary of air quality and meteorological data, on completion of the site's sampling program.

J. Engelbrecht; I. Kavouras; D. Campbell; S. Campbell; S. Kohl; D. Shafer

2009-04-02T23:59:59.000Z

314

Letter Report: Yucca Mountain Environmental Monitoring Systems Initiative - Air Quality Scoping Study for Tonopah Airport, Nye County, Nevada  

SciTech Connect (OSTI)

The Desert Research Institute (DRI) is performing a scoping study as part of the U.S. Department of Energy's Yucca Mountain Environmental Monitoring Systems Initiative (EMSI). The main objective is to obtain baseline air quality information for Yucca Mountain and an area surrounding the Nevada Test Site (NTS). Air quality and meteorological monitoring and sampling equipment housed in a mobile trailer (shelter) is collecting data at eight sites outside the NTS, including Ash Meadows National Wildlife Refuge (NWR), Tonopah Airport, Beatty, Rachel, Caliente, Pahranagat NWR, Crater Flat, and the Tonopah Airport, and at four sites on the NTS (Engelbrecht et al., 2007a-d). The trailer is stationed at any one site for approximately eight weeks at a time. This letter report provides a summary of air quality and meteorological data, on completion of the site's sampling program.

J. Engelbrecht; I. Kavouras; D Campbell; S. Campbell; S. Kohl, D. Shafer

2008-08-01T23:59:59.000Z

315

St. Louis Airport Site annual site environmental report. Calendar year 1985  

SciTech Connect (OSTI)

During 1985, the environmental monitoring program was continued at the St. Louis Airport Site (SLAPS) in St. Louis County, Missouri. The ditches north and south of the site have been designated for cleanup as part of the Formerly Utilized Sites Remedial Action Program (FUSRAP), a United States Department of Energy (DOE) program to identify, decontaminate, or otherwise control sites where low-level radioactive contamination remains from the early years of the nation's atomic energy program. The site is not currently controlled or regulated by DOE or NRC, although radiological monitoring of the site has been authorized by the DOE. The monitoring program at the SLAPS measures radon gas concentrations in air; external gamma radiation dose rates; and uranium, thorium, and radium concentrations in surface water, groundwater, and sediment. Potential radiation doses to the public are also calculated. Because the site is not controlled or regulated by the DOE, the DOE Derived Concentration Guides (DCGs) are not applicable to SLAPS, but are included as a basis for comparison only. The DOE DCGs and the DOE radiation protection standard have been revised.

Not Available

1986-04-01T23:59:59.000Z

316

St. Louis airport site annual environmental report for calendar year 1990, St. Louis, Missouri  

SciTech Connect (OSTI)

Environmental monitoring of the US Department of Energy's (DOE) St. Louis Airport Site (SLAPS) and surrounding area began in 1984. SLAPS is part of the Formerly Utilized Sites Remedial Action Program (FUSRAP), a DOE program to decontaminate or otherwise control sites where residual radioactive materials remain from the early years of the nation's atomic energy program or from commercial operations causing conditions that Congress has authorized DOE to remedy. Monitoring results are compared with applicable Environmental Protection Agency (EPA) standards; federal, state, and local applicable or relevant and appropriate requirements (ARARs); and/or DOE derived concentration guidelines (DCGs). Environmental standards, ARARs, and DCGs are established to protect public health and the environment. Results from the 1990 environmental monitoring program demonstrated that the concentrations of contaminants of concern were all below applicable standards, ARARs, and guidelines. Site activities in 1990 were limited to maintenance. SLAPS was in compliance with all applicable regulations during 1990 and has remained in compliance since 1984, when the environmental monitoring program and remedial action began.

Not Available

1991-08-01T23:59:59.000Z

317

Myers et al. Page 1 Use of High Temperature Hydrogen Annealing to  

E-Print Network [OSTI]

GaN T. H Myers, B. L. VanMil and L. J. Holbert, Department of Physics C. Y. Peng and C. D Stinespring

Myers, Tom

318

E-Print Network 3.0 - advanced model based Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Collection: Computer Technologies and Information Sciences 51 Kompetenzzentrum fr Automobil-und Industrieelektronik Summary: applications. GaN based electronic chip production...

319

E-Print Network 3.0 - aristolochia birostris ducht Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Long Dan Xie Gan Wan is listed as containing Caulis Aristolochiae... Aristolochia fruit 2.00%. 3. Stephania tetrandra and Astragalus, Plum Flower Brand purchased from...

320

Center for Energy Nanoscience at USC  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

LED Nanowire LEDs GaN based light emitting diodes (LEDs) are a key technology for high brightness LEDs. Although already successful commercially, fundamental physical and device...

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Physics based analytical modelling of Gallium Nitride(GaN) MESFET considering different ion implantation energy with high temperature annealing.  

E-Print Network [OSTI]

??A physics based analytical model of ion implanted GaN MESFET has been presented considering high temperature annealing effects. Choosing appropriate activation energy of impurity atoms,… (more)

Raghavan, Vinay

2015-01-01T23:59:59.000Z

322

E-Print Network 3.0 - acidic supported ionic Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Hin Hark Gan Summary: are summarized in Mate- rials and Methods and in the Supporting Material. In this work, we compute ionic... present the mesoscale chromatin model and...

323

Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate  

Broader source: Energy.gov [DOE]

This project is producing high-efficiency semipolar light-emitting diodes (LEDs) on low-defect bulk gallium nitride (GaN) substrates.

324

E-Print Network 3.0 - alternative proposal acoustic Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

'acoustique 1990 APPLICATION OF FAST HARTLEY TRANSFORM TO ACOUSTIC INTENSITY MEASUREMENT W.S. GAN Acoustical... Services (1989)Pte Ltd, 29 Telok Ayer Street, Singapore 0104....

325

E-Print Network 3.0 - aln thin films Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

devices 2. GaN has also a direct energy... in microelectronics and optoelectronics ... Source: Boo, Jin-Hyo - Department of Chemistry, Sungkyunkwan University;...

326

The design and evaluation of a measurement system for ...  

Science Journals Connector (OSTI)

Mar 3, 1975 ... or lux meter; G-an equal energy response of an ideal radiometer (measuring watts) ; D-the .... processing unit, where the signal is digitally.

2000-01-04T23:59:59.000Z

327

Jackson Megiatto | Center for Bio-Inspired Solar Fuel Production  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Barun Das Bhupesh Goyal Jackson Megiatto Lu Gan Matthieu Koepf Matthieu Walther Sandip Shinde Sudhanshu Sharma Jackson Megiatto Postdoctoral Fellow Subtask 4 project: "Design and...

328

ASU EFRC - Postdoctoral fellows  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Postdoctoral fellows Barun Das Postdoctoral Fellow Bhupesh Goyal Postdoctoral fellow Jackson Megiatto Postdoctoral Fellow Lu Gan Postdoctoral fellow Matthieu Koepf Postdoctoral...

329

E-Print Network 3.0 - atos relacionados ao Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

novo... alemao Johannes Stark, gan- hador do Nobel de 1919, "for his discovery of the Doppler effect ... Source: Gallas, Jason - Instituto de Fsica, Universidade Federal do...

330

Review of EU airport energy interests and priorities with respect to ICT, energy efficiency and enhanced building operation  

E-Print Network [OSTI]

settings. CASCADE is aiming also at turning FDD into the actionable information by developing an energy action plan that links Actions-Actors-ISO Standards (ISO, 2011) through a web-based management portal. The developed ICT solutions will be able... performance benchmarks 5. Making an Energy Action Plan that links actors, actions, and ISO standards based on facility specific data and providing cost/benefit (kWh, CO2, Euros). CASCADE approach focuses to the actions which airports can take in order...

Costa, A.; Blanes, L. M.; Donnelly, C.; Keane, M. M.

2012-01-01T23:59:59.000Z

331

RADIATION-HARD OPTO-LINK FOR THE ATLAS PIXEL DETECTOR K.K. GAN, K.E. ARMS, M. JOHNSON, H. KAGAN, R. KASS, C. RUSH, S. SMITH,  

E-Print Network [OSTI]

the ROD, bi-phase mark (BPM) encoded with the data (command) signal to control the pixel detector, is transmitted via a fiber to a PIN diode. This BPM encoded signal is decoded using a Digital Opto The DORIC decodes BPM encoded clock and data signals received by a PIN diode. The BPM signal is derived from

Gan, K. K.

332

Train directions from Newark Airport to Nassau Inn or Palmer House Hotel Train is the most convenient way to get to Princeton from EWR. From the terminals at  

E-Print Network [OSTI]

Train directions from Newark Airport to Nassau Inn or Palmer House Hotel Train is the most), and proceed to track 5. You need the NorthEast Corridor (NEC) train to Trenton (not Long Branch). They go is valid for any train on this route. The ride takes 40-45 minutes, and you exit at Princeton Junction

333

Preliminary assessment report for Virginia Army National Guard Army Aviation Support Facility, Richmond International Airport, Installation 51230, Sandston, Virginia  

SciTech Connect (OSTI)

This report presents the results of the preliminary assessment (PA) conducted by Argonne National Laboratory at the Virginia Army National Guard (VaARNG) property in Sandston, Virginia. The Army Aviation Support Facility (AASF) is contiguous with the Richmond International Airport. Preliminary assessments of federal facilities are being conducted to compile the information necessary for completing preremedial activities and to provide a basis for establishing corrective actions in response to releases of hazardous substances. The PA is designed to characterize the site accurately and determine the need for further action by examining site activities, quantities of hazardous substances present, and potential pathways by which contamination could affect public health and the environment. The AASF, originally constructed as an active Air Force interceptor base, provides maintenance support for VaARNG aircraft. Hazardous materials used and stored at the facility include JP-4 jet fuel, diesel fuel, gasoline, liquid propane gas, heating oil, and motor oil.

Dennis, C.B.

1993-09-01T23:59:59.000Z

334

ATLAS Upgrade Week 1 November 10, 2010  

E-Print Network [OSTI]

VCSEL/PIN Irradiation Study radiation hardness of VCSEL/PIN arrays since 2006: vendors: AOC arrays (2010): see next slides AOC 10 Gb/s VCSEL (2010): see next slides #12;K.K. Gan ATLAS Upgrade/cm2: 76% consistent with NIEL hypothesis #12;K.K. Gan ATLAS Upgrade Week 9 Irradiation of AOC

Gan, K. K.

335

VCSEL Meeting 1 April 15, 2011  

E-Print Network [OSTI]

University Reliability statistics on AOC and ULM VCSEL arrays Analysis of 9 channels on opto to humidity resistance Info courtesy of Michal Z. #12;K.K. Gan VCSEL Meeting 3 AOC Reliability Data sort) #12;K.K. Gan VCSEL Meeting 4 AOC vs. ULM Reliability Data both claim their VCSELs

Gan, K. K.

336

Scanned probe characterization of semiconductor nanostructures  

E-Print Network [OSTI]

of the window and wing region of the a–plane GaN film,? m thick GaN film was then grown through the windows in thewindow regions, lateral overgrowth over the dielectric mask, and coalescence of the film

Law, James Jeremy MacDonald

2009-01-01T23:59:59.000Z

337

ATLAS ATLAS ATLAS ATLAS  

E-Print Network [OSTI]

ATLAS ATLAS ATLAS ATLAS Status of Optical Electronics K.K. Gan Ohio State University February 1, 2000 ATLAS Pixel Week February 1, 2000 ATLAS Pixel Week Status of Optical Electronics (page 1) K.K. Gan Ohio State University #12; ATLAS ATLAS ATLAS ATLAS VCSEL Driver Chip ffl VDC converts LVDS signal

Gan, K. K.

338

ATLAS ATLAS ATLAS ATLAS  

E-Print Network [OSTI]

ATLAS ATLAS ATLAS ATLAS Status of Optical Electronics K.K. Gan Ohio State University September 26, 2000 ATLAS Pixel Week September 26, 2000 ATLAS Pixel Week Status of Optical Electronics (page 1) K.K. Gan Ohio State University #12; ATLAS ATLAS ATLAS ATLAS Opto­electronics Team Ohio State University: K

Gan, K. K.

339

ATLAS ATLAS ATLAS ATLAS  

E-Print Network [OSTI]

ATLAS ATLAS ATLAS ATLAS Status of Optical Package Development K.K. Gan Ohio State University December 4, 1999 ATLAS Week Outline of Talk ffl Marconi Package ffl Taiwan Package ffl OSU Package December 4, 1999 ATLAS Week Status of Optical Package Development (page 1) K.K. Gan Ohio State University #12

Gan, K. K.

340

Survival brachiopod faunas of the end-Permian mass extinction from the southern Alps (Italy) and South China  

Science Journals Connector (OSTI)

...137. a µ He, Xi-lin Shen, Shu-zhong...pp., 9 pls. Jin, Yu-gan, Liao...Fauna von Lo-Ping. In China 4...µ Wang, Guo-ping, Liu, Qing-zhao, Jin, Yu-gan, Hu...Jin-ke, Sheng, Jin-zhang, Yao, Zhao-qi, Liang, Xi-lu, Chen...

ZHONG-QIANG CHEN; KUNIO KAIHO; ANNETTE D. GEORGE; JINNAN TONG

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Impact of aircraft emissions on air quality in the vicinity of airports. Volume II. An updated model assessment of aircraft generated air pollution at LAX, JFK, and ORD. Final report Jan 1978-Jul 1980  

SciTech Connect (OSTI)

This report documents the results of the Federal Aviation Administration (FAA)/Environmental Protection Agency (EPA) air quality study which has been conducted to assess the impact of aircraft emissions of carbon monoxide (CO), hydrocarbons (HC), and oxides of nitrogen (NOx) in the vicinity of airports. This assessment includes the results of recent modeling and monitoring efforts at Washington National (DCA), Los Angeles International (LAX), Dulles International (IAD), and Lakeland, Florida airports and an updated modeling of aircraft generated pollution at LAX, John F. Kennedy (JFK) and Chicago O'Hare (ORD) airports. The Airport Vicinity Air Pollution (AVAP) model which was designed for use at civil airports was used in this assessment. In addition the results of the application of the military version of the AVAP model the Air Quality Assessment Model (AQAM), are summarized. Both the results of the pollution monitoring analyses in Volume I and the modeling studies in Volume II suggest that: maximum hourly average CO concentrations from aircraft are unlikely to exceed 5 parts per million (ppm) in areas of public exposure and are thus small in comparison to the National Ambient Air Quality Standard of 35 ppm; maximum hourly HC concentrations from aircraft can exceed 0.25 ppm over an area several times the size of the airport; and annual average NO2 concentrations from aircraft are estimated to contribute only 10 to 20 percent of the NAAQS limit level.

Yamartino, R.J.; Smith, D.G.; Bremer, S.A.; Heinold, D.; Lamich, D.

1980-07-01T23:59:59.000Z

342

Semiconductor Nanoclusters as Potential Photocatalysts  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

0001 0001 Transport and Kinetic Processes in GaN Epitaxial Lateral Overgrowth M. E. Coltrin and C. C. Mitchell Motivation-GaN is a wide band gap semi- conductor with a broad range of potential appli- cations, e.g., high-temperature electronics, op- telectronics, chemical or biological sensors. GaN thin films usually have a high defect den- sity, leading to poor performance. Epitaxial Lat- eral Overgrowth (ELO) has been shown to greatly reduce defect densities, often by factors of 100 or more. We are conducting fundamental studies of GaN growth kinetics during ELO. Accomplishment-In ELO, a mask pattern of dielectric material is deposited on top of a GaN buffer layer. Further growth of GaN occurs se- lectively on exposed areas of the underlying buffer layer, and not on the dielectric material.

343

Ultra-thin ohmic contacts for p-type nitride light emitting devices  

DOE Patents [OSTI]

A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 .ANG.. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.

Raffetto, Mark; Bharathan, Jayesh; Haberern, Kevin; Bergmann, Michael; Emerson, David; Ibbetson, James; Li, Ting

2014-06-24T23:59:59.000Z

344

St. Louis Airport Site. Annual site environmental report, calendar year 1985. Formerly Utilized Sites Remedial Action Program (FUSRAP). Revision 1  

SciTech Connect (OSTI)

During 1985, the environmental monitoring program was continued at the St. Louis Airport Site (SLAPS) in St. Louis County, Missouri. The ditches north and south of the site have been designated for cleanup as part of the Formerly Utilized Sites Remedial Action Program (FUSRAP). The monitoring program at the SLAPS measures radon gas concentrations in air; external gamma radiation dose rates; and uranium, thorium, and radium concentrations in surface water, groundwater, and sediment. Potential radiation doses to the public are also calculated. Because the site is not controlled or regulated by the DOE, the DOE Derived Concentration Guides (DCGs) are not applicable to SLAPS, but are included only as a basis for comparison. The DOE DCGs and the DOE radiation protection standard have been revised. (Appendix B). During 1985, annual average radon levels in air at the SLAPS were below the DCG for uncontrolled areas. External gamma monitoring in 1985 showed measured annual gamma dose rates ranging from 3 to 2087 mrem/y, with the highest value occurring in an area known to be contaminated. The calculated maximum dose at the site boundary, assuming limited occupancy, would be 6 mrem/y. Average annual concentrations of /sup 230/Th, /sup 226/Ra, and total uranium in surface waters remained below the DOE DCG. The on-site groundwater measurements showed that average annual concentrations of /sup 230/Th, /sup 226/Ra and total uranium were within the DOE DCGs. Although there are no DCGs for sediments, all concentrations of total uraniu, /sup 230/Th, and /sup 226/Ra were below the FUSRAP Guidelines.

Not Available

1986-09-01T23:59:59.000Z

345

Geochemical information for sites contaminated with low-level radioactive wastes: II. St. Louis Airport Storage Site  

SciTech Connect (OSTI)

The St. Louis Airport Storage Site (SLASS) became radioactively contaminated as a result of wastes that were being stored from operations to recover uranium from pitchblende ores in the 1940s and 1950s. The US Department of Energy is considering various remedial action options for the SLASS under the Formerly Utilized Site Remedial Action Program (FUSRAP). This report describes the results of geochemical investigations, carried out to support the FUSRAP activities and to aid in quantifying various remedial action options. Soil and groundwater samples from the site were characterized, and sorption ratios for uranium and radium and apparent concentration limit values for uranium were measured in soil/groundwater systems by batch contact methodology. The uranium and radium concentrations in soil samples were significantly above background near the old contaminated surface horizon (now at the 0.3/sup -/ to 0.9/sup -/m depth); the maximum values were 1566 ..mu..g/g and 101 pCi/g, respectively. Below about the 6/sup -/m depth, the concentrations appeared to be typical of those naturally present in soils of this area (3.8 +- 1.2 ..mu..g/g and 3.1 +- 0.6 pCi/g). Uranium sorption ratios showed stratigraphic trends but were generally moderate to high (100 to 1000 L/kg). The sorption isotherm suggested an apparent uranium concentration limit of about 200 mg/L. This relatively high solubility can probably be correlated with the carbonate content of the soil/groundwater systems. The lower sorption ratio values obtained from the sorption isotherm may have resulted from changes in the experimental procedure or the groundwater used. The SLASS appears to exhibit generally favorable behavior for the retardation of uranium solubilized from waste in the site. Parametric tests were conducted to estimate the sensitivity of uranium sorption and solubility to the pH and carbonate content of the system.

Seeley, F.G.; Kelmers, A.D.

1985-01-01T23:59:59.000Z

346

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

347

Developing health-based pre-planning clearance goals for airport remediation following chemical terrorist attack: Introduction and key assessment considerations  

SciTech Connect (OSTI)

In the event of a chemical terrorist attack on a transportation hub, post-event remediation and restoration activities necessary to attain unrestricted facility re-use and re-entry could require hours to multiple days. While restoration timeframes are dependent on numerous variables, a primary controlling factor is the level of pre-planning and decision-making completed prior to chemical terrorist release. What follows is the first of a two-part analysis identifying key considerations, critical information, and decision criteria to facilitate post-attack and post-decontamination consequence management activities. A conceptual site model and human health-based exposure guidelines are developed and reported as an aid to site-specific pre-planning in the current absence of U.S. state or Federal values designated as compound-specific remediation or re-entry concentrations, and to safely expedite facility recovery to full operational status. Chemicals of concern include chemical warfare nerve and vesicant agents and the toxic industrial compounds phosgene, hydrogen cyanide, and cyanogen chloride. This work has been performed as a national case study conducted in partnership with the Los Angeles International Airport and The Bradley International Terminal. All recommended guidelines have been selected for consistency with airport scenario release parameters of a one-time, short-duration, finite airborne release from a single source followed by compound-specific decontamination.

Watson, Annetta Paule [ORNL; Raber, Ellen [Lawrence Livermore National Laboratory (LLNL); Dolislager, Frederick [University of Tennessee, Knoxville (UTK); Hauschild, Veronique [U.S. Army Center for Health Promotion and Preventive Medicine; Hall, Dr. Linda [ENVIRON International Corporation; Love, Dr. Adam [Johnson Wright, Inc.

2011-01-01T23:59:59.000Z

348

Developing health-based pre-planning clearance goals for airport remediation following a chemical terrorist attack: Decision criteria for multipathway exposure routes  

SciTech Connect (OSTI)

In the event of a chemical terrorist attack on a transportation hub, post-event remediation and restoration activities necessary to attain unrestricted facility re-use and re-entry could require hours to multiple days. While timeframes are dependent on numerous variables, a primary controlling factor is the level of pre-planning and decision-making completed prior to chemical release. What follows is the second of a two-part analysis identifying key considerations, critical information and decision criteria to facilitate post-attack and post-decontamination consequence management activities. Decision criteria analysis presented here provides first-time, open-literature documentation of multi-pathway, health-based remediation exposure guidelines for selected toxic industrial compounds, chemical warfare agents, and agent degradation products for pre-planning application in anticipation of a chemical terrorist attack. Guideline values are provided for inhalation and direct ocular vapor exposure routes as well as percutaneous vapor, surface contact, and ingestion. Target populations include various employees as well as transit passengers. This work has been performed as a national case study conducted in partnership with the Los Angeles International Airport and The Bradley International Terminal. All recommended guidelines have been selected for consistency with airport scenario release parameters of a one-time, short-duration, finite airborne release from a single source followed by compound-specific decontamination.

Watson, Annetta Paule [ORNL; Dolislager, Frederick [University of Tennessee, Knoxville (UTK); Hall, Dr. Linda [ENVIRON International Corporation; Hauschild, Veronique [U.S. Army Center for Health Promotion and Preventive Medicine; Raber, Ellen [Lawrence Livermore National Laboratory (LLNL); Love, Dr. Adam [Johnson Wright, Inc.

2011-01-01T23:59:59.000Z

349

Annual Review of BPA-Funded Projects in Natural and Artificial Propagation of Salmonids, March 27-29, 1985, Holiday Inn Airport, Portland, Oregon.  

SciTech Connect (OSTI)

The Fish and Wildlife Division of Bonneville Power Administration (BPA) hosted a meeting for contractors to present the results of fiscal year 1984 research conducted to implement the Northwest Power Planning Council's Fish and Wildlife Program. The meeting focused on those projects specifically related to natural and artificial propagation of salmonids. The presentations were held at the Holiday Inn Airport in Portland, Oregon, on March 27-29, 1985. This document contains abstracts of the presentations from that meeting. Section 1 contains abstracts on artificial propagation, fish health, and downstream migration, and Section 2 contains abstracts on natural propagation and habitat improvement. The abstracts are indexed by BPA Project Number and by Fish and Wildlife Program Measure. The registered attendees at the meeting are listed alphabetically in Appendix A and by affiliation in Appendix B.

United States. Bonneville Power Administration.

1985-04-01T23:59:59.000Z

350

 

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Defect-Driven Magnetism in Mn-doped GaN Defect-Driven Magnetism in Mn-doped GaN Semiconductors doped with magnetic elements are very interesting materials. In these materials, the magnetic impurities interact with and induce magnetism in the semiconductor host. Thus, they have the potential for combining magnetism with the rich electronic behavior of semiconductors, which may lead to new generations of low-power-consumption electronics, non-volatile memories, and field-configurable logic devices. Gallium nitride doped with Mn is particularly interesting because it is one of the few materials for which magnetism above room temperature has been reported, making it a candidate room-temperature magnetic semiconductor. Photo: Gan Molecules Illustration of the crystal structures derived from x-ray results and calculations. In ideal GaN (left), a Mn atom substitutes

351

Semiconductor Nanoclusters as Potential Photocatalysts  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

High Power Electronics Based on the 2-Dimensional Electron Gas in GaN High Power Electronics Based on the 2-Dimensional Electron Gas in GaN Heterostructures by S. R. Kurtz, A. A. Allerman, and D. Koleski Motivation-GaN-based electronics offer miniaturization potential of radical proportions for microwave power amplifiers. GaN's large bandgap, high breakdown field, high electron velocity, and excellent thermal properties have led to high electron mobility transistors (HEMT) with up to 10x the power density of GaAs and other traditional semiconductors at frequencies up to 20 GHz. Further contributing to the outstanding performance of GaN-based amplifiers is the highly conducting, 2-dimensional electron gas (2DEG) used for the HEMT channel. Intrinsic polarization and piezoelectric properties of GaN materials can produce a 2DEG at an

352

Semiconductor Nanoclusters as Potential Photocatalysts  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Development of Cantilever Epitaxy to Produce High Quality GaN with Reduced Development of Cantilever Epitaxy to Produce High Quality GaN with Reduced Threading Dislocation Densities by C. C. Mitchell, A. A. Allerman, C. I. H. Ashby, R. D. Briggs, D. M. Follstadt, S. L. Lee, D. D. Koleske Motivation-GaN grown on any currently available substrates has an inherent problem of having to overcome a large lattice mismatch with the substrate. As a result typical planar GaN includes anywhere from 10 8 - 10 10 threading dislocations per square centimeter. Cantilever epitaxy (CE) is a technique developed to produce areas of GaN with a reduced number of vertical threading dislocations (VTDs) over large areas. Low defect materials are required to reduce leakage and breakdown of both electronic and opto- electronic devices. Accomplishment-This

353

E-Print Network 3.0 - anthralin Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

for: anthralin Page: << < 1 > >> 1 Langmuir Films of Anthracene Derivatives on Liquid Mercury II: Asymmetric Molecules Department of Physics, Bar-Ilan UniVersity, Ramat-Gan 52900,...

354

Nuclear Reactions and Reactor Safety  

E-Print Network [OSTI]

. Snoeijer 85 On the drag of turbulent vortex rings L. Gan, J. R. Dawson & T. B. Nickels 106 Subcritical Linear water waves: the horizontal motion of a structure in the time domain P. McIver 313 Transmission

Onuchic, José

355

ISSN 0022-1120 25 October 2012  

E-Print Network [OSTI]

. Snoeijer 85 On the drag of turbulent vortex rings L. Gan, J. R. Dawson & T. B. Nickels 106 Subcritical Linear water waves: the horizontal motion of a structure in the time domain P. McIver 313 Transmission

Dalziel, Stuart

356

doi:10.1016/S0092-8240(03)00007-7 Bulletin of Mathematical Biology (2003) 65, 375396  

E-Print Network [OSTI]

Gan, 52900, Israel E-mail: ylouzoun@princeton.edu SORIN SOLOMON Racah Institute for Physics, Hebrew methodology based on a combination between Monte-Carlo simulation and ele- ments from partial differential

357

Symmetry of single-wall nanotubes  

Science Journals Connector (OSTI)

A review of the symmetry groups of the various single-wall nano- and microtubes considered in the literature (BN, GaN, MS2, C, BC3, BC2N) is presented.

Damnjanovic, M.

2001-04-27T23:59:59.000Z

358

E-Print Network 3.0 - atomization characteristics final Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Sciences 15 The properties of amorphous GaN B. Cai and D. A. Drabold Summary: IPR and projected them onto individual atom sites. In Fig.5, we present the characteristic...

359

G?ru?a Medicine: A History of Snakebite and Religious Healing in South Asia  

E-Print Network [OSTI]

yad avocad um?pati? / tad aha? sampravak?y?mi ???u gautamaca ?ivokta? pravad?my aham / (ravipul?). Unless otherwisekul??gan? vipravadh?r aha? ki? bhavanmate j??gulik? bhav?mi)

Slouber, Michael

2012-01-01T23:59:59.000Z

360

Vehicle Technologies Office Merit Review 2014: Advanced Low-Cost...  

Broader source: Energy.gov (indexed) [DOE]

Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction Drives Vehicle Technologies Office Merit Review 2014: Advanced Low-Cost SiC and...

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Radiation-Hardened Gallium Nitride Detector and Arrays for Fusion Diagnostics  

SciTech Connect (OSTI)

This poster reports testing to confirm that GaN devices exhibit the extreme radiation hardness needed for use at the NIF, functioning properly after 1x10{sup 12} protons/cm{sup 2} proton irradiation in one year.

Sun, K. X., and MacNeil, L.

2011-09-08T23:59:59.000Z

362

Applied Materials Develops an Advanced Epitaxial Growth System to Bring Down LED Costs  

Broader source: Energy.gov [DOE]

With the help of DOE funding, Applied Materials has developed an advanced epitaxial growth system for gallium nitride (GaN) LED devices that decreases operating costs, increases internal quantum efficiency, and improves binning yields.

363

IIl-nitride nanowires and heterostructures : growth and optical properties on nanoscale  

E-Print Network [OSTI]

Gallium nitride (GaN) and indium gallium nitride (InGaN) nanowires promise potential for further improving the electricity-to-light energy conversion efficiencies in light emitting diodes due to strain relaxation, reduced ...

Zhou, Xiang, Ph. D. Massachusetts Institute of Technology

2014-01-01T23:59:59.000Z

364

Temperature dependence of electrical characteristics of Pt/GaN Schottky diode fabricated by UHV e-beam evaporation  

Science Journals Connector (OSTI)

GaN has been the subject of strategic research among all compound semiconductors and has been explored widely and rightly for its various characteristics, like direct wide band gap, high breakdown field, high ...

Ashish Kumar; Shamsul Arafin; Markus Christian Amann…

2013-11-01T23:59:59.000Z

365

Publications, 2014 | MIT-Harvard Center for Excitonics  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

117, 8290-8298. Shiue, Ren-Jye; Gan, Xuetao; and Englund, Dirk, "On-chip graphene optoelectronic devices for high-speed modulation and photodetection," Proc. SPIE OPTO, 89940P...

366

E-Print Network 3.0 - algan-based deep ultraviolet Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GanAlgan- Based Laser Diodes with Modulation-Doped Strained... in ultraviolet optoelectronics2-4 , room temperature lasing5-8 , and solar cells applications9... -LEDs and...

367

E-Print Network 3.0 - algan-based laser diodes Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GaN and GaNAlGaN quantum structures for UV electroabsorption modulators Summary: optoelectronics industry.1,2 In the visible spectral range, light emitting diodes,3 laser...

368

E-Print Network 3.0 - aln interlayer thicknesses Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

size. Introduction GaN and its alloys with InN and AlN have been used for optoelectronic devices Source: Dietz, Nikolaus - Department of Physics and Astronomy, Georgia State...

369

2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 1 www.advmat.de  

E-Print Network [OSTI]

-frequency transistors and optoelectronic devices.1­3 It has been reported that self-heating effects in GaN transistors and for tuning the wavelength of the emitted light in optoelectronic devices. They were also proposed

Atwater, Harry

370

This  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Vanadium and chromium redox behavior in borosilicate nuclear waste glasses D.A. McKeown , I.S. Muller, H. Gan, Z. Feng, Carol Viragh, I.L. Pegg Vitreous State Laboratory,...

371

EMSL - radionuclides  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

radionuclides en Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. http:www.emsl.pnl.govemslwebpublications...

372

E-Print Network 3.0 - atlas insertable b-layer Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Search Powered by Explorit Topic List Advanced Search Sample search results for: atlas insertable b-layer Page: << < 1 2 3 4 5 > >> 1 K.K. Gan 1 Array-Based Opto-Link...

373

E-Print Network 3.0 - aluminum oxide selectively Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

between GaN and AlGaN has been observed up to an aluminum mole fraction... oxides.1-3 For gallium nitride and aluminum gallium nitride this effect has been seldom reported.4... ,...

374

Impact of Chemical States on the Effective Work Function of Metal Gate and High-kappa Dielectric Materials on Novel Heterostructures  

E-Print Network [OSTI]

An experimental and theoretical approach is taken to determine the effect of a heterojunction on the effective work function in a metal/high-? gate stack, the characteristics of aqueous hydrochloric acid cleaned (aq-HCl) GaN surface...

Coan, Mary

2012-10-19T23:59:59.000Z

375

Shekel Technologies | Open Energy Information  

Open Energy Info (EERE)

Ramat Gan, Israel Zip: 52287 Sector: Solar Product: Developed SolarCAT (Solar Compressed-Air Turbine), which combines dish-mirror solar concentrators with gas turbines and energy...

376

E-Print Network 3.0 - atlas slhc pixel Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Week 3 Radiation Dosage at SLHC VCSELPIN of current pixel detector are mounted on patch panel PP0... at SLHC dosage 12;K.K. Gan ATLAS Upgrade Week 9 Summary Hamamatsu and...

377

Device-level thermal analysis of GaN-based electronics  

E-Print Network [OSTI]

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

Bagnall, Kevin Robert

2013-01-01T23:59:59.000Z

378

Transmission electron microscopy studies of GaN/gamma-LiAlO 2 heterostructures.  

E-Print Network [OSTI]

??Die vorliegende Arbeit beschaeftigt sich mit dem strukturellen Aufbau von (1-100) M-plane GaN, das mit plasmaunterstuetzter Molekularstrahlepitaxie auf gamma-LiAlO2(100) Substraten gewachsen wurde. Die heteroepitaktische Ausrichtung… (more)

Liu, Tian-Yu

2005-01-01T23:59:59.000Z

379

Effect of the nitrogen ion energy on the MBE growth of thin gallium nitride films  

Science Journals Connector (OSTI)

The influence of the energy of bombarding nitrogen ions on the growth of thin gallium nitride (GaN) films under molecular beam epitaxy (MBE) conditions has been simulated using the method of balance kinetic eq...

D. V. Kulikov; Yu. V. Trushin; V. S. Kharlamov

2010-03-01T23:59:59.000Z

380

Der Physiker mischt Licht wie Maler die Farben Michael Kneissl forscht an neuen Halbleitermaterialien  

E-Print Network [OSTI]

High-Definition-DVD-Playern ­ das Zauberwort ist Galliumnitrid (GaN). �berall dort, wo es um Licht Farbton erzielen wollen. Wird reines Galliumnitrid mit Strom angeregt, »hüpfen« Elektronen

Nabben, Reinhard

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

SIMS-Untersuchungen an modernen Halbleitern.  

E-Print Network [OSTI]

??Für einen industriellen Einsatz der technologisch hochinteressanten Halbleiter Galliumnitrid (GaN) und Vanadiumdioxid (VO2) ist die Beherrschung der Herstellung und das Verständnis der Materialeigenschaften unerläßlich. Das… (more)

Burkhardt, Wolfgang

1999-01-01T23:59:59.000Z

382

Spindynamik in Galliumnitrid.  

E-Print Network [OSTI]

??Die vorliegende Arbeit untersucht die Spindynamik der Leitungsbandelektronen im Halbleiter Galliumnitrid (GaN) mittels zeitaufgelöster Kerr-Rotations-Spektroskopie. Die Spinrelaxation kann hinreichend im Rahmen der Dyakonov-Perel-Theorie beschrieben werden.… (more)

Buß, Jan Heye

2011-01-01T23:59:59.000Z

383

Control of the emission wavelength of gallium nitride-based nanowire light-emitting diodes.  

E-Print Network [OSTI]

??Halbleiter-Nanosäulen (auch -Nanodrähte) werden als Baustein für Leuchtdioden (LEDs) untersucht. Herkömmliche LEDs aus Galliumnitrid (GaN) bestehen aus mehreren Kristallschichten auf einkristallinen Substraten. Ihr Leistungsvermögen wird… (more)

Wölz, Martin

2013-01-01T23:59:59.000Z

384

Bottoms Up  

E-Print Network [OSTI]

Broadcast Transcript: "Bottoms up!" Or, "gan bei," as they say here in China. But what are you drinking? It could either be the authentic 144-proof sorghum-based liquor Moutai, or a clever counterfeit. Moutai has been ...

Hacker, Randi; Boyd, David

2011-03-30T23:59:59.000Z

385

ARM - Data Announcements Article  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

August 19, 2013 Data Announcements Large-Scale Forcing Data for AMIE-Gan Available for Evaluation Bookmark and Share Large-scale forcing data from the SMART-R precipitation radar...

386

ARM - Data Announcements Article  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

October 8, 2014 Data Announcements Large-Scale Forcing Data for AMIE-GAN Updated Bookmark and Share Analysis domain for Revelle, with diameters of 300 km. The red star denotes...

387

Measurements of molecular and thermal diffusion coefficients in ternary mixtures  

E-Print Network [OSTI]

of a polymer and a colloid in a water-ethanol solvent, treating the ternary mixture as a pseudobinary; Gans et polymer in a water-ethanol solvent mixture. They reported a sign change in the Soret coefficient

Firoozabadi, Abbas

388

2012/12/27 2 2012/12/27 3  

E-Print Network [OSTI]

HBTSolar cell Thick film MOCVD MMIC Lasers (strained QW, dilute nitride, QD) Solar cell III-V on Si Sb-based III-V Rectifier HBT, HEMT, Solar cells III-V on Si III-V on Si Solar cellSolar cell GaN LED, LD, power, lighting (AlGaInP, GaN) Communication (LD and detectors) Photovoltaic: Solar cells Design-house Epi

Hung, Shih-Hao

389

Takeuchi, Detchprohm, Iwaya, Hayashi, Isomura, Kimura, Yamaguchi, Yamaguchi, Wetzel, Amano, Akasaki, Kaneko,  

E-Print Network [OSTI]

nitride-based laser diodes with such a 1 µm crack-free n-AlGaN cladding layer/n-AlGaN contact layer-Based Laser Diodes using Thick n-AlGaN Layers INTRODUCTION The quality of GaN epitaxial layers has been dra the GaN layer and the sapphire substrate.1 Recently the performance of nitride-based laser di- odes (LDs

Wetzel, Christian M.

390

Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and  

E-Print Network [OSTI]

InN material lattice-matched to GaN will also be useful as cladding layer in laser structure. Specifically, Al) for solid state light- ing [1­19], visible diode lasers for both display and biosensing [20GaN and AlGaN in III-nitride based applications for LEDs [40­42] and laser diode (LD) [20­26], solar

Gilchrist, James F.

391

Tunnel MOS Heterostructure Field Effect Transistor for RF Switching Applications  

E-Print Network [OSTI]

. ..................................................................................... 5 Figure 4. The lattices of N-face and Ga-face gallium nitride. .......................................... 10 Figure 5. The lattice constants and bandgaps of III-nitride semiconductors and their alloys... semiconductors and particularly Gallium Nitride (GaN) are gaining a lot of attention for high speed and high power switching applications due to their large critical breakdown electric fields, high mobility and high saturated electron velocity [1, 2]. GaN has...

Rezanezhad Gatabi, Iman

2013-06-06T23:59:59.000Z

392

Abbreviated epitaxial growth mode (AGM) method for reducing cost and improving quality of LEDs and lasers  

DOE Patents [OSTI]

The use of an abbreviated GaN growth mode on nano-patterned AGOG sapphire substrates, which utilizes a process of using 15 nm low temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned AGOG sapphire by employing abbreviated growth mode has two orders of magnitude lower threading dislocation density than that of conventional GaN template grown on planar sapphire. The use of abbreviated growth mode also leads to significant reduction in cost of the epitaxy. The growths and characteristics of InGaN quantum wells (QWs) light emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano-patterned AGOG sapphire demonstrated at least a 24% enhancement of output power enhancement over that of LEDs grown on conventional GaN templates.

Tansu, Nelson; Chan, Helen M; Vinci, Richard P; Ee, Yik-Khoon; Biser, Jeffrey

2013-09-24T23:59:59.000Z

393

Simulation studies on the evolution of gallium nitride on a liquid gallium surface under plasma bombardmenta)  

Science Journals Connector (OSTI)

Monte Carlo simulations were conducted to study the formation of gallium-nitride (GaN) layer on liquid gallium (Ga) sputtering target immersed in nitrogen ( N 2 ) plasma. In the simulation model N ions were assumed to possess energy equal to the bias voltage applied to the sputtering target with respect to the plasma. The results showed the surface morphology of GaN changed from a relatively smooth GaN on Ga surface at 50 eV N ion energy to a rough surface with GaN dendrites on liquid Ga at 500 eV ion energy. Further increase in N ion energy up to 1 keV resulted in smaller density of GaN dendrites on surface. Increasing surface coverage of Ga by GaN substantially reduced the sputtering yield of Ga from the target. These simulation results were correlated with previously reported experimental observations on liquid Ga surface immersed in the nitrogen plasma of a plasma-sputter-type ion source.

M. R. Vasquez Jr.; R. E. Flauta; M. Wada

2008-01-01T23:59:59.000Z

394

Superfund record of decision (EPA Region 4): New Hanover County Airport Burn Pit Site, New Hanover County, Wilmington, NC. (First remedial action), September 1992. Final report  

SciTech Connect (OSTI)

The New Hanover site was located on Gardner Road approximately 500 feet west of the New Hanover County Airport terminal, New Hanover, North Carolina. From 1968 to 1979, the site was used for fire-fighter training purposes. During training exercises, jet fuel, gasoline, petroleum storage bottoms, fuel oil, kerosene, and sorbent materials from oil spill cleanup were burned in a pit. During its active years, water from the pit was allowed to flow onto land surfaces. Inspections conducted after the pit was abandoned showed that most of the standing liquid in the pit was water. In addition to the burn pit area, fire-fighting activities resulted in contamination at several other site areas, including an auto burn area; a railroad tank burn area; an aircraft mock-up area; a fuel tank and pipelines area; and two stained soil areas north of the burn pit. The ROD addressed restoration of the aquifer to drinking water quality as a final action for the site. The primary contaminants of concern that affect the soil and ground water were VOCs, including benzene; and metals, including chromium and lead.

Not Available

1992-09-29T23:59:59.000Z

395

Closure Report for Corrective Action Unit 230: Area 22 Sewage Lagoons and Corrective Action Unit 320: Area 22 Desert Rock Airport Strainer Box Nevada Test Site, Nevada  

SciTech Connect (OSTI)

This Closure Report (CR) describes the remediation activities performed and the results of verification sampling conducted at Corrective Action Unit (CAU) 230, Area 22 Sewage Lagoons and CAU 320, Area 22 Desert Rock Airport Strainer Box. The CAU is currently listed in Appendix III of the Federal Facility Agreement and Consent Order (FFACO, 1996). The CAU is located in Area 22 of the Nevada Test Site (NTS) (Figure 1) and consists of the following Corrective Action Sites (CASs): 22-03-01- Sewage Lagoon (CAU 230); and 22-99-01- Strainer Box (CAU 320). Included with CAS 22-99-01 is a buried Imhoff tank and a sludge bed. These CAUs will be collectively referred to in this plan as the Area 22 Sewage Lagoons site. Site characterization activities were done during September 1999. Characterization of the manholes associated with the septic system leading to the Imhoff tank was done during March 2000. The results of the characterization presented in the Corrective Action Decision Document (CADD) indicated that only the sludge bed (CAS 22-99-01) contained constituents of concern (COC) above action levels and required remediation (U.S. Department of Energy, Nevada Operations Office [DOE/NV], 2000a).

D. S. Tobiason

2001-07-01T23:59:59.000Z

396

St. Louis airport site: Annual site environmental report, St. Louis, Missouri, Calendar Year 1988: Formerly Utilized Sites Remedial Action Program (FUSRAP)  

SciTech Connect (OSTI)

The monitoring program at St. Louis Airport Site (SLAPS) measures radon concentrations in air; external gamma dose rates; and uranium, thorium, and radium concentrations in surface water, groundwater, and sediment. To assess the potential effects of SLAPS on public health, the potential radiation dose was estimated for a hypothetical maximally exposed individual. Based on the scenario described in this report, this hypothetical individual would receive an external exposure approximately equivalent to 7.5 percent of the DOE radiation protection standard of 100 mrem/yr. This exposure is approximately the same as a person receives during two round-trip flights from New York to Los Angeles (because of greater amounts of cosmic radiation at higher altitudes). The cumulative dose to the population within an 80-km (50-mi) radius of SLAPS that results from radioactive materials present at the site is indistinguishable from the dose the same population receives from naturally occurring radioactive sources. Results of 1988 monitoring show that SLAPS is in compliance with the DOE radiation protection standard. 18 refs., 13 figs., 13 tabs.

Not Available

1989-04-01T23:59:59.000Z

397

Airport sustainability encompasses a wide variety of airport management and  

E-Print Network [OSTI]

management plan listing potential improvements along with their estimated benefits and costs. Examples is to consider renewable energies. Solar photovoltaic (PV), which uses panels to absorb solar energy, is prob- ably the most commonly implemented type of renewable energy. Solar PV panels can be ground

Minnesota, University of

398

Bullets found in airport arrest  

Science Journals Connector (OSTI)

... Just as the United States has brought in new security measures for international flights - including fingerprint screening for some passengers - a scare has shown that even ... even the most basic existing security checks can fail. Security officials at Washington DC's Dulles ...

Michael Hopkin

2004-01-16T23:59:59.000Z

399

Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

400

Science Highlights 2005  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

5 5 Photo: Gan Molecules Defect-Driven Magnetism in Mn-doped GaN DECEMBER 12, 2005 Semiconductors doped with magnetic elements are candidates as room-temperature magnetic semiconductors with potential use as new low-power-consumption electronics, non-volatile memories, and field-configurable logic devices. Research at the U.S. Department of Energy's Advanced Photon Source is producing new and important information about Mn-doped GaN. Photo: Membrane Image How a Cellular "Spacecraft" Opens its Airlock DECEMBER 9, 2005 Researchers using a Structural Biology Center beamline at the APS have clarified the connection between the tiny hatchways that allow nutrients to pass into our cells and the steps by which they use a cell's energy to permit or deny materials entry into the interior of the cell from

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Notices  

Broader source: Energy.gov (indexed) [DOE]

519 Federal Register 519 Federal Register / Vol. 77, No. 118 / Tuesday, June 19, 2012 / Notices send you a Grant Award Notification (GAN). We may notify you informally, also. If your application is not evaluated or not selected for funding, we notify you. 2. Administrative and National Policy Requirements: We identify administrative and national policy requirements in the application package and reference these and other requirements in the Applicable Regulations section of this notice. We reference the regulations outlining the terms and conditions of an award in the Applicable Regulations section of this notice and include these and other specific conditions in the GAN. The GAN also incorporates your approved application as part of your binding commitments under the grant.

402

Mobile Facility  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Facility Facility AMF Information Science Architecture Baseline Instruments AMF1 AMF2 AMF3 Data Operations AMF Fact Sheet Images Contacts AMF Deployments Hyytiälä, Finland, 2014 Manacapuru, Brazil, 2014 Oliktok Point, Alaska, 2013 Los Angeles, California, to Honolulu, Hawaii, 2012 Cape Cod, Massachusetts, 2012 Gan Island, Maldives, 2011 Ganges Valley, India, 2011 Steamboat Springs, Colorado, 2010 Graciosa Island, Azores, 2009-2010 Shouxian, China, 2008 Black Forest, Germany, 2007 Niamey, Niger, 2006 Point Reyes, California, 2005 Mobile Facilities Pictured here in Gan, the second mobile facility is configured in a standard layout. Pictured here in Gan, the second mobile facility is configured in a standard layout. To explore science questions beyond those addressed by ARM's fixed sites at

403

MOCVD Growth of AlGaInN for UV Emitters  

SciTech Connect (OSTI)

Issues related to the growth of nitride-based UV emitters are investigated in this work. More than 100 times of improved in the optical efficiency of the GaN active region can be attained with a combination of raising the growth pressure and introducing a small amount of indium. The unique issue in the UV emitter concerning the use of AlGaN for confinement and the associated tensile cracking is also investigated. They showed that the quaternary AlGaInN is potentially capable of providing confinement to GaN and GaN:In active regions while maintaining lattice matching to GaN, unlike the AlGaN ternary system.

Crawford, Mary; Han, Jung

1999-07-07T23:59:59.000Z

404

Growth and characterizations of semipolar (1122) InN  

SciTech Connect (OSTI)

We report on metal-organic vapor phase epitaxial growth of (1122) InN on (1122) GaN templates on m-plane (1010) sapphire substrates. The in-plane relationship of the (1122) InN samples is [1123]{sub InN} Double-Vertical-Line Double-Vertical-Line [0001]{sub sapphire} and [1100]{sub InN} Double-Vertical-Line Double-Vertical-Line [1210]{sub sapphire}, replicating the in-plane relationship of the (1122) GaN templates. The surface of the (1122) InN samples and the (1122) GaN templates shows an undulation along [1100]{sub InN,GaN}, which is attributed to anisotropic diffusion of indium/gallium atoms on the (1122) surfaces. The growth rate of the (1122) InN layers was 3-4 times lower compared to c-plane (0001) InN. High resolution transmission electron microscopy showed a relaxed interface between the (1122) InN layers and the (1122) GaN templates, consistent with x-ray diffraction results. Basal plane stacking faults were found in the (1122) GaN templates but they were terminated at the InN/(1122) GaN interface due to the presence of misfit dislocations along the entire InN/GaN interface. The misfit dislocations were contributed to the fully relaxation and the tilts of the (1122) InN layers. X-ray photoelectron spectroscopy was used to determine the polarity of the grown (1122) InN sample, indicating an In-polar (1122) InN. The valence band maximum was determined to be at (1.7 {+-} 0.1) eV for the (1122) InN sample, comparable to In-polar c-plane InN.

Dinh, Duc V.; Skuridina, D.; Solopow, S.; Frentrup, M.; Pristovsek, M.; Vogt, P.; Kneissl, M. [Institute of Solid State Physics, Technische Universitaet Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany); Ivaldi, F.; Kret, S.; Szczepanska, A. [Institute of Physics, Polish Academy of Science, Al. Lotnikow 32/46, 02668 Warsaw (Poland)

2012-07-01T23:59:59.000Z

405

Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN  

SciTech Connect (OSTI)

Double heterostructures of strained GaN quantum wells (QWs) sandwiched between relaxed AlN layers provide a platform to investigate the quantum-confined electronic and optical properties of the wells. The growth of AlN/GaN/AlN heterostructures with varying GaN quantum well thicknesses on AlN by plasma molecular beam epitaxy (MBE) is reported. Photoluminescence spectra provide the optical signature of the thin GaN QWs. Reciprocal space mapping in X-ray diffraction shows that a GaN layer as thick as ?28 nm is compressively strained to the AlN layer underneath. The density of the polarization-induced two-dimensional electron gas (2DEG) in the undoped heterostructures increases with the GaN QW thickness, reaching ?2.5?×?10{sup 13}/cm{sup 2}. This provides a way to tune the 2DEG channel density without changing the thickness of the top barrier layer. Electron mobilities less than ?400 cm{sup 2}/Vs are observed, leaving ample room for improvement. Nevertheless, owing to the high 2DEG density, strained GaN QW field-effect transistors with MBE regrown ohmic contacts exhibit an on-current density ?1.4?A/mm, a transconductance ?280 mS/mm, and a cut off frequency f{sub T}?104?GHz for a 100-nm-gate-length device. These observations indicate high potential for high-speed radio frequency and high voltage applications that stand to benefit from the extreme-bandgap and high thermal conductivity of AlN.

Li, Guowang; Song, Bo; Ganguly, Satyaki; Zhu, Mingda; Wang, Ronghua; Yan, Xiaodong; Verma, Jai; Protasenko, Vladimir; Grace Xing, Huili; Jena, Debdeep, E-mail: djena@nd.edu [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)

2014-05-12T23:59:59.000Z

406

Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy  

SciTech Connect (OSTI)

We report on the studies of optical phonon modes in nearly defect-free GaN nanowires embedded with intrinsic InGaN quantum dots by using oblique angle transmission infrared spectroscopy. These phonon modes are dependent on the nanowire fill-factor, doping densities of the nanowires, and the presence of InGaN dots. These factors can be applied for potential phonon based photodetectors whose spectral responses can be tailored by varying a combination of these three parameters. The optical anisotropy along the growth (c-) axis of the GaN nanowire contributes to the polarization agility of such potential photodetectors.

Titus, J.; Perera, A. G. U. [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States)] [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States); Nguyen, H. P. T.; Mi, Z. [Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7 (Canada)] [Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7 (Canada)

2013-03-25T23:59:59.000Z

407

Searches for axioelectric effect of solar axions with BGO-scintillator and BGO-bolometer detectors  

E-Print Network [OSTI]

A search for axioelectric absorption of 5.5 MeV solar axions produced in the $p + d \\rightarrow {^3\\rm{He}}+\\gamma~(5.5~ \\rm{MeV})$ reaction has been performed with a BGO detectors. A model-independent limit on the product of axion-nucleon $g_{AN}^3$ and axion-electron $g_{Ae}$ coupling constants has been obtained: $| g_{Ae}\\times g_{AN}^3|< 1.9\\times 10^{-10}$ for 90\\% C.L..

Muratova, V N; Giorni, L; Nagorny, S S; Pattavina, L; Bakhlanov, S V; Beeman, J W; Bellini, F; Biassoni, M; Capelli, S; Clemenza, M; Dratchnev, I S; Ferri, E; Giachero, A; Gotti, C; Kayunov, A S; Maiano, C; Maino, M; Pavan, M; Pirro, S; Semenov, D A; Sisti, M; Unzhakov, E V

2015-01-01T23:59:59.000Z

408

A contrastive study of the phonetics of Changsha dialect and Beijing Mandarin  

E-Print Network [OSTI]

of elements drawn from Wti, Yue, Gan dialects and ancient Chinese in addition to Beijing, North, and Southwest dialects. Here V U Y it is necessary to give distinctive definitions to Beijing putonghua and Hhnyii put- onghua, which often get confused. Bej... of elements drawn from Wti, Yue, Gan dialects and ancient Chinese in addition to Beijing, North, and Southwest dialects. Here V U Y it is necessary to give distinctive definitions to Beijing putonghua and Hhnyii put- onghua, which often get confused. Bej...

Wu, Yiqiang

2012-06-07T23:59:59.000Z

409

Theory and Design of Smith-Purcell Semiconductor Terahertz Sources  

E-Print Network [OSTI]

-power semiconductor devices, but have also been demonstrated to be highly useful in the development of state of the art light emitting diode (LED) technology. One of the more promising LED materials, gallium nitride (GaN) comes from the “three-nitride” (III-N) family...-power semiconductor devices, but have also been demonstrated to be highly useful in the development of state of the art light emitting diode (LED) technology. One of the more promising LED materials, gallium nitride (GaN) comes from the “three-nitride” (III-N) family...

Smith, Don DeeWayne

2013-12-06T23:59:59.000Z

410

Truncation of Periodic Image Interactions for Confined Systems  

E-Print Network [OSTI]

First principles methods based on periodic boundary conditions are used extensively by materials theorists. However, applying these methods to systems with confined electronic states entails the use of large unit cells in order to avoid artificial image interactions. We present a general approach for truncating the Coulomb interaction that removes image effects directly and leads to well converged results for modest-sized periodic cells. As an illustration, we find the lowest-energy quasiparticle and exciton states in two-dimensional hexagonal GaN sheets. These sheets have been proposed as parent materials for single-walled GaN nanotubes which may be of interest for optoelectronics.

Sohrab Ismail-Beigi

2006-03-16T23:59:59.000Z

411

Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays  

DOE Patents [OSTI]

Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.

Rogers, John A; Nuzzo, Ralph; Kim, Hoon-sik; Brueckner, Eric; Park, Sang Il; Kim, Rak Hwan

2014-10-21T23:59:59.000Z

412

Issues associated with the metalorganic chemical vapor deposition of ScGaN and YGaN alloys.  

SciTech Connect (OSTI)

The most energy efficient solid state white light source will likely be a combination of individually efficient red, green, and blue LED. For any multi-color approach to be successful the efficiency of deep green LEDs must be significantly improved. While traditional approaches to improve InGaN materials have yielded incremental success, we proposed a novel approach using group IIIA and IIIB nitride semiconductors to produce efficient green and high wavelength LEDs. To obtain longer wavelength LEDs in the nitrides, we attempted to combine scandium (Sc) and yttrium (Y) with gallium (Ga) to produce ScGaN and YGaN for the quantum well (QW) active regions. Based on linear extrapolation of the proposed bandgaps of ScN (2.15 eV), YN (0.8 eV) and GaN (3.4 eV), we expected that LEDs could be fabricated from the UV (410 nm) to the IR (1600 nm), and therefore cover all visible wavelengths. The growth of these novel alloys potentially provided several advantages over the more traditional InGaN QW regions including: higher growth temperatures more compatible with GaN growth, closer lattice matching to GaN, and reduced phase separation than is commonly observed in InGaN growth. One drawback to using ScGaN and YGaN films as the active regions in LEDs is that little research has been conducted on their growth, specifically, are there metalorganic precursors that are suitable for growth, are the bandgaps direct or indirect, can the materials be grown directly on GaN with a minimal defect formation, as well as other issues related to growth. The major impediment to the growth of ScGaN and YGaN alloys was the low volatility of metalorganic precursors. Despite this impediment some progress was made in incorporation of Sc and Y into GaN which is detailed in this report. Primarily, we were able to incorporate up to 5 x 10{sup 18} cm{sup -3} Y atoms into a GaN film, which are far below the alloy concentrations needed to evaluate the YGaN optical properties. After a no-cost extension was granted on this program, an additional more 'liquid-like' Sc precursor was evaluated and the nitridation of Sc metals on GaN were investigated. Using the Sc precursor, dopant level quantities of Sc were incorporated into GaN, thereby concluding the growth of ScGaN and YGaN films. Our remaining time during the no-cost extension was focused on pulsed laser deposition of Sc metal films on GaN, followed by nitridation in the MOCVD reactor to form ScN. Finally, GaN films were deposited on the ScN thin films in order to study possible GaN dislocation reduction.

Koleske, Daniel David; Knapp, James Arthur; Lee, Stephen Roger; Crawford, Mary Hagerott; Creighton, James Randall; Cross, Karen Charlene; Thaler, Gerald

2009-07-01T23:59:59.000Z

413

Corrective Action Decision Document for Corrective Action Unit 230: Area 22 Sewage Lagoons and Corrective Action Unit 320: Area 22 Desert Rock Airport Strainer Box, Nevada Test Site, Nevada, Rev. 0  

SciTech Connect (OSTI)

This Corrective Action Decision Document identifies and rationalizes the U.S. Department of Energy, Nevada Operations Office's selection of a recommended corrective action alternative (CAA) appropriate to facilitate the closure of Corrective Action Unit (CAU) 230, Area 22 Sewage Lagoons, and CAU 320, Area 22 Desert Rock Airport Strainer Box, under the Federal Facility Agreement and Consent Order. Referred to as CAU 230/320, both CAUs are located at the Nevada Test Site (NTS) and comprise two Corrective Action Sites (CASs), 22-03-01 (Sewage Lagoons) and 22-99-01 (Strainer Box). The Area 22 Sewage Lagoons site also includes a buried Imhoff Tank, sludge bed, and associated sewer piping. A September 1999 corrective action investigation identified the only contaminant of concern above preliminary action levels at this CAU (i.e., total petroleum hydrocarbons as diesel-range organics). During this same investigation, three Corrective Action Objectives (CAOs) were identified to prevent or mitigate exposure to subsurface debris and contaminated soil. Based on these CAOs, a review of existing data, future use, and current operations in Area 22 of the NTS, three CAAs were developed for consideration: Alternative 1 - No Further Action, Alternative 2 - Closure in Place with Administrative Controls, and Alternative 3 - Excavation and Removal. These alternatives were evaluated based on four general corrective action standards and five remedy selection decision factors. Alternative 3 was chosen on technical merit as the preferred alternative for CAU 230/320. This alternative was judged to meet all applicable state and federal regulations for closure of the site and will eliminate potential future exposure pathways to the buried debris and contaminated soils at both of the CASs within Area 22.

U.S. Department of Energy, Nevada Operations Office

2000-04-20T23:59:59.000Z

414

Suppression of thermal conductivity in InxGa12xN alloys by nanometer-scale disorder  

E-Print Network [OSTI]

power requires low lattice thermal conductivity while maintaining high mobility of the charge carriers. The binary InN and GaN materials have high ther- mal conductivity materials9­14 (the room-temperature thermalSuppression of thermal conductivity in InxGa12xN alloys by nanometer-scale disorder T. Tong,1,a) D

Wu, Junqiao

415

World Review of Intermodal Transportation Research, Vol. 4, No. 1, 2013 23 Copyright 2013 Inderscience Enterprises Ltd.  

E-Print Network [OSTI]

-ray device for tyre inspection can be found at the very old date of 1939 (Capen et al., 1939). Some other damaged tyres Yair Wiseman Computer Science Department, Bar-Ilan University, Ramat-Gan 52900, Israel E-mail: wiseman@cs.huji.ac.il Abstract: Many people die each year in car accidents because of damaged tyres

Wiseman, Yair

416

436 IEEE/ASME TRANSACTIONS ON MECHATRONICS, VOL. 9, NO. 2, JUNE 2004 Torque and Velocity Ripple Elimination of AC  

E-Print Network [OSTI]

Elimination of AC Permanent Magnet Motor Control Systems Using the Internal Model Principle Wai-Chuen Gan and velocity ripple elimination in AC permanent magnet (PM) motor control systems. The torque ripples caused-free output response. Index Terms--AC permanent magnet motor, gain scheduled (GS) speed regulators, internal

Qiu, Li

417

Acoustic-phonon propagation in rectangular semiconductor nanowires with elastically dissimilar barriers  

E-Print Network [OSTI]

Engineering, University of California--Riverside, Riverside, California 92521, USA Received 15 February 2005 dissimilar materials. As example systems, we have considered GaN nanowires with AlN and plastic barrier­5 The modification of the acoustic phonon dispersion in semiconductor superlattices has been mostly studied, both

418

IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 42, NO. 5, MAY 2006 477 Tapping Light From Waveguides by High-Order  

E-Print Network [OSTI]

and I. Vorobeichik are with Optun Inc., Santa Clara, CA 95054 USA (e-mail: Romanas facet or em- bedded in the chip itself [4]. In many cases, the required tapping ratio is in the order USA (e-mail: enarevicius@yahoo.com). G. Rosenblum is with TransChip-Israel Research Center, Ramat Gan

Narevicius, Edvardas

419

*Corresponding author. Tel.: #1 805 893 3543; fax: #1 805 893 3262; e-mail: stacia@xanadu.ece.ucsb.edu.  

E-Print Network [OSTI]

N surface by a preflow of disilane. Their surface density is comparable to the dislocation density of the Ga) and ammonia. Disilane was used as n-type dopant. The growth temper- ature (¹ ) of the GaN : Si base layer

Bowers, John

420

Real-Time Deferrable Load Control: Handling the Uncertainties of Renewable Generation  

E-Print Network [OSTI]

Real-Time Deferrable Load Control: Handling the Uncertainties of Renewable Generation Lingwen Gan for handling the un- certainties of renewable generation. Traditionally, demand response has been focused in renewable generation. In this paper, we propose a real-time distributed deferrable load control algorithm

Low, Steven H.

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Real-Time Deferrable Load Control: Handling the Uncertainties of Renewable Generation  

E-Print Network [OSTI]

Real-Time Deferrable Load Control: Handling the Uncertainties of Renewable Generation Lingwen Gan is an essential tool for handling the uncertainties associated with the increasing penetration of renewable aggregate) to compensate for the random fluctuations in renewable generation. In this paper, we propose

Low, Steven H.

422

Complexity, tunneling, and geometrical symmetry L. P. Horwitz,1,2,3  

E-Print Network [OSTI]

Department of Physics, Bar-Ilan University, Ramat-Gan 52900, Israel 3 School of Physics, Raymond and Beverly classical chaotic behavior and the rate of tunneling in the corresponding quantum system. The conclu- sion or to the left , certain positions are passed where the system becomes strongly near-degenerate. These positions

Ashkenazy, Yossi "Yosef"

423

Air pollution sources apportionment in a French urban site Marie Chavent*  

E-Print Network [OSTI]

preoccupation for human health. In order to achieve this purpose, air pollution sources have to be accuratelyAir pollution sources apportionment in a French urban site Marie Chavent* , Hervé Guégan sources of fine particulate emission. Key-words: air pollution data, Principal Component Analysis (PCA

Paris-Sud XI, Université de

424

CX-010973: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory

425

CX-011468: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Advanced Low-Cost Silicon-Carbide (SiC) and Gallium-Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 10/29/2013 Location(s): Michigan Offices(s): National Energy Technology Laboratory

426

CX-010974: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory

427

Seeding date and polymer seed coating effects on plant establishment and yield of fall-seeded  

E-Print Network [OSTI]

-seeded canola in the Northern Great Plains E. N. Johnson1, P. R. Miller2, R. E. Blackshaw3, Y. Gan4, K. N of fall-seeded canola in the Northern Great Plains. Can. J. Plant Sci. 84: 955­963. The time interval for planting fall-seeded Brassica napus L. canola in the Northern Great Plains is narrow, since seeding must

Lawrence, Rick L.

428

IBL General Meeting 1 June 18, 2010  

E-Print Network [OSTI]

-boards of current pixel detector Summary K.K. Gan #12;IBL General Meeting 3 AOC 10 Gb/s VCSEL Reasonable.6 hours Near end of irradiation ~ 40 hours #12;IBL General Meeting 5 AOC 10 Gb/s VCSEL One channel opto-boards use AOC 10 Gb/s VCSEL arrays instead of Truelight arrays use BeO optical package

Gan, K. K.

429

David Patel, Ishiang Shih Department of Electrical Engineering, McGill University , QC, Canada  

E-Print Network [OSTI]

David Patel, Ishiang Shih Department of Electrical Engineering, McGill University , QC, Canada electrical consumption. [2] GaN Material Properties ·Wurtzite structure oNo inversion symmetry oEach element operations oReported up to ~500oC ·Lower mobility vs. GaAs oDue to higher alloy scattering in nitrides. o

Barthelat, Francois

430

Synthesis and electronic properties of ZnO/CoZnO core-shell nanowires Song Han, Daihua Zhang, and Chongwu Zhoua  

E-Print Network [OSTI]

of interesting DMS nanowires including Mn-doped GaN,18,19 CdS, and ZnS Ref. 19 have been synthesized- hibit ferromagnetism above room temperature when doped with substitutional Mn2+ ions and sufficiently high levels of p-type dopants. Sato et al.8 further revealed that n-type Co- doped ZnO would remain

Zhou, Chongwu

431

Bulk Quantities of Single-Crystal Silicon Micro-/Nanoribbons Generated from  

E-Print Network [OSTI]

such as oxides (ZnO, SnO2, Ga2O3, Fe2O3, In2O3, CdO, PbO2, etc.),3 sulfides (CdS, ZnS),4 nitride (GaN),5, crystallinity, and doping levels. These methods can form membranes, tubes, and ribbons, with thicknesses

Rogers, John A.

432

Rapid Research Note Raman Scattering in Resonance  

E-Print Network [OSTI]

-uniformity in the ternary alloy InGaN [4, 5]. However, resonance Raman scattering at bound excitons as reported for CdS doped 220 mm thick GaN film grown by hydride vapor phase epitaxy. Sapphire (0001) with a sputtered Zn

Nabben, Reinhard

433

IEEE ELECTRON DEVICE LETTERS, VOL. 30, NO. 6, JUNE 2009 593 GaAs MESFET With a High-Mobility  

E-Print Network [OSTI]

systems, including InGaAs [4], CdS [5], ZnO [6], and GaN [7]. To the best of our knowledge FET (MESFET) fabricated with an intentionally doped n-type planar GaAs NW channel grown on a semi

Li, Xiuling

434

IOP PUBLISHING NANOTECHNOLOGY Nanotechnology 20 (2009) 365703 (5pp) doi:10.1088/0957-4484/20/36/365703  

E-Print Network [OSTI]

. The technique may also be applied to other wurtzite semiconductors, such as GaN, CdS and ZnS. 1. Introduction diodes (LEDs) [1]. Unintentionally doped ZnO usually exhibits n-type conduction, which is generally

Wang, Zhong L.

435

GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization  

E-Print Network [OSTI]

radiation hardness than Si, GaAs, CdS and GaN, therefore it should be suitable for space applications. Last novel optoelectronic devices circumventing the problem of p-type doping of ZnO. In such Al devices become reality: the problem of p-type doping of ZnO. So far, there is no way to reliably produce

Wetzel, Christian M.

436

Hybrid structure laser based on semiconductor nanowires and a silica microfiber knot cavity  

E-Print Network [OSTI]

.1063/1.3093821 Semiconductor lasers based on cadmium sulfide CdS , zinc oxide ZnO , gallium nitride GaN nanowires, and gal-earth doped microfiber knot laser with knot diameter below 1 mm failed due to the insufficient pump absorption

Wu, Shin-Tson

437

physica status solidi 1 Rapid Research Note To be published in: phys. stat. sol. (b) 223, No. 3 (2001)  

E-Print Network [OSTI]

-uniformity in the ternary alloy InGaN [4, 5]. However, resonance Raman scattering at bound excitons as reported for CdS doped 220 µm thick GaN film grown by hydride vapor phase epitaxy. Sapphire (0001) with a sputtered Zn

Nabben, Reinhard

438

Optimal Decentralized Protocols for Electric Vehicle Charging  

E-Print Network [OSTI]

1 Optimal Decentralized Protocols for Electric Vehicle Charging Lingwen Gan Ufuk Topcu Steven Low Abstract--We propose decentralized algorithms for optimally scheduling electric vehicle (EV) charging. The algorithms exploit the elasticity and controllability of electric vehicle loads in order to fill the valleys

Low, Steven H.

439

Camouflage, communication and thermoregulation: lessons from colour changing organisms  

Science Journals Connector (OSTI)

...National Research Foundation (NRF), UNESCO-L'Oreal and the Australian Research Council to D.S.-F. A.M. was supported...Publishers Castrucci, A.M.D , Sherbrooke, W.C, Zucker...Reptilia, vol. 18 (eds C. Gans D. Crews), pp. 298-422. Chicago...

2009-01-01T23:59:59.000Z

440

Characterization and Modeling of Silicon Carbide Power Devices and Paralleling Operation  

E-Print Network [OSTI]

Characterization and Modeling of Silicon Carbide Power Devices and Paralleling Operation Yutian Cui silicon carbide (SiC) power devices. The devices have been tested for both static and dynamic like silicon carbide (SiC) and gallium nitride (GaN) are becoming more attractive. SiC power devices

Tolbert, Leon M.

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

08/06 Ver. 2.1 Sushil Atreya Professor  

E-Print Network [OSTI]

for Research on Oxidants: Photochemistry, Emissions & Transport · Solar and Heliospheric Physics · Spaceborne of satellite-platform instruments for observation of the earth-atmosphere-ocean system. the michiGan diFFerence As part of the University of Michigan College of Engineering, AOSS offers high-quality academic science

Eustice, Ryan

442

EINSTEIN MANIFOLDS WITH SKEW TORSION  

Science Journals Connector (OSTI)

......since M is Sasaki, d = 2F where F is the fundamental 2-form, that is, F(X, Y) = g...an underlying S1 -fibration, but it does not induce a contact structure (the...Generalized geometry--an introduction, Handbook of Pseudo-Riemannian Geometry and Supersymmetry......

Ilka Agricola; Ana Cristina Ferreira

2014-09-01T23:59:59.000Z

443

Coordinately Up-Regulated Genes in Ovarian Cancer  

Science Journals Connector (OSTI)

...Furusato M., LiVolsi V. A., Menzin A. W., Liu P. C., Benjamin I., Morgan M. A., King S. A., Rebane B. A., Cardonick...carcinomas. Gene, 238: 375-385, 1999. 21 Wang K., Gan L., Jeffery E., Gayle M., Gown A. M., Skelly M., Nelson P. S...

Colleen D. Hough; Kathleen R. Cho; Alan B. Zonderman; Donald R. Schwartz; and Patrice J. Morin

2001-05-15T23:59:59.000Z

444

Author's personal copy Degradation of pentachlorophenol with the presence of fermentable  

E-Print Network [OSTI]

-fermentable co-substrates in a microbial fuel cell Liping Huang a , Linlin Gan a , Qingliang Zhao b, , Bruce E Available online 27 July 2011 Keywords: Microbial fuel cell Pentachlorophenol Co-metabolism Acetate Glucose fuel cells (MFCs) than in open circuit controls, with removal rates of 0.12 ± 0.01 mg/L h (14.8 ± 1

445

Mineralization of Pentachlorophenol With Enhanced Degradation and Power Generation From  

E-Print Network [OSTI]

­2221. � 2012 Wiley Periodicals, Inc. KEYWORDS: microbial fuel cell; PCP degradation rate; power production Cathode Microbial Fuel Cells Liping Huang,1 Linlin Gan,1 Ning Wang,1 Xie Quan,1 Bruce E. Logan,2 GuohuaARTICLE Mineralization of Pentachlorophenol With Enhanced Degradation and Power Generation From Air

446

Intraseasonal variability in sea surface height over the South Wei Zhuang,1  

E-Print Network [OSTI]

: Zhuang, W., S.P. Xie, D. Wang, B. Taguchi, H. Aiki, and H. Sasaki (2010), Intraseasonal variability through baroclinic Rossby waves [Z. Liu et al., 2001; Gan et al., 2006]. In the NSCS, the circulation Niño and Southern Oscillation (ENSO) [Xie et al., 2003; Liu et al., 2004; Wu and Chang, 2005; Fang et

Xie, Shang-Ping

447

Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition  

E-Print Network [OSTI]

Seebeck coefficient and resistance measurement system for thermoelectric materials in the thin diskInN alloy on GaN as excellent material candidate for thermoelectric application. © 2010 American Institute-nitride alloys have shown promising results for thermoelectric applications,20­30 in particular for materi- als

Gilchrist, James F.

448

Volume 50, Number 4 2009 361 Weakly electric fishes have been an important model system  

E-Print Network [OSTI]

organ dis- charge (EOD); electrocommunication; immobilization; jam- ming avoidance response (JAR); pain.edu. Introduction W eakly electric fish emit an electric organ dis- charge (EOD1) using a specialized electric or- gan located in the tail. EOD properties such as fundamental frequency are highly regulated by central

Chacron, Maurice

449

Androgens Alter the Tuning of Electroreceptors  

Science Journals Connector (OSTI)

...species-specific electric or-gan discharge (EOD) used in electroloca-tion and communication...wave" species, so called because their EOD is nearly sinusoidal, each ani-mal discharges...6 meec I o r-.96 I0 130 150 EOD frequency (Hz) typically discharging at...

J. HARLAN MEYER; HAROLD H. ZAKON

1982-08-13T23:59:59.000Z

450

Fossil Birds from the Hawaiian Islands: Evidence for Wholesale Extinction by Man Before Western Contact  

Science Journals Connector (OSTI)

...species-specific electric or-gan discharge (EOD) used in electroloca-tion and communication...wave" species, so called because their EOD is nearly sinusoidal, each ani-mal discharges...6 meec I o r-.96 I0 130 150 EOD frequency (Hz) typically discharging at...

STORRS L. OLSON; HELEN F. JAMES

1982-08-13T23:59:59.000Z

451

Published in IET Control Theory and Applications Received on 17th September 2010  

E-Print Network [OSTI]

photovoltaic generators in distribution networks H. Xin1 Z. Lu1 Z. Qu2 D. Gan1 D. Qi1 1 College of Electrical (PV) generators installed on a distribution network. The proposed control strategy not only makes that have several distributed generators (DGs) [10, 11]. This mode was also successfully used in some micro

Qu, Zhihua

452

Neurobiology of Disease Spatial and Temporal Properties of Tic-Related Neuronal  

E-Print Network [OSTI]

Neurobiology of Disease Spatial and Temporal Properties of Tic-Related Neuronal Activity of Life Sciences, Bar- Ilan University, Ramat-Gan 52900, Israel Motor tics are involuntary brief muscle the pathophysiology of tics is still largely unknown, multiple lines of evidence suggest the involvement

Bar-Gad, Izhar

453

Wide Bandgap Semiconductors for Power Electronics, Optoelectronics, and Advanced Communications  

E-Print Network [OSTI]

Wide Bandgap Semiconductors for Power Electronics, Optoelectronics, and Advanced Communications with material composition over a range of 0.7 to 5 eV. This factor allows them to be used for optoelectronic. Improvement in growth quality and doping of GaN is needed to improve the performance of optoelectronics

Li, Mo

454

Seeded growth of AlN bulk crystals in m-and c-orientation , R. Collazo a,, R.F. Dalmau b  

E-Print Network [OSTI]

. Introduction Single crystal AlN is a promising substrate for nitride-based optoelectronic devices exploiting efficiency of optoelectronic devices [8]. Second, AlN and GaN have different valence band structures caused in higher luminous efficiency of deep UV optoelectronic devices. Although the growth of III-nitride thin

Dietz, Nikolaus

455

numero d'ordre : 3819 pour l'obtention du Grade de  

E-Print Network [OSTI]

+ x + x2 = 3yq . . . . . . . . . . . . . . . . . . . . . . . . 28 2 Th´eor`emes de factorisation, th´eor`eme de Steiner, th´eor`emes de Gan- noukh, application diophantienne 31 2.0.1 Quelques lemmes pr´eliminaires. . . . . . . . . . . . . . . . . . . . . 31 2.0.2 Premi`ere factorisation. . . . . . . . . . . . . . . . . . . . . . . . . . 32 2.0.3 Un th´eor

Paris-Sud XI, Université de

456

More Efficient Power Conversion for EVs: Gallium-Nitride Advanced Power Semiconductor and Packaging  

SciTech Connect (OSTI)

Broad Funding Opportunity Announcement Project: Delphi is developing power converters that are smaller and more energy efficient, reliable, and cost-effective than current power converters. Power converters rely on power transistors which act like a very precisely controlled on-off switch, controlling the electrical energy flowing through an electrical circuit. Most power transistors today use silicon (Si) semiconductors. However, Delphi is using semiconductors made with a thin layer of gallium-nitride (GaN) applied on top of the more conventional Si material. The GaN layer increases the energy efficiency of the power transistor and also enables the transistor to operate at much higher temperatures, voltages, and power-density levels compared to its Si counterpart. Delphi is packaging these high-performance GaN semiconductors with advanced electrical connections and a cooling system that extracts waste heat from both sides of the device to further increase the device’s efficiency and allow more electrical current to flow through it. When combined with other electronic components on a circuit board, Delphi’s GaN power transistor package will help improve the overall performance and cost-effectiveness of HEVs and EVs.

None

2010-02-01T23:59:59.000Z

457

Planning Organization & Logistics Deputy Director General  

E-Print Network [OSTI]

" Planning Organization & Logistics Deputy Director General Tel: 03 531 8553 : Fax: 03 535 4925 : P-O.Logistics@mail.biu.ac.il Bar-Ilan University, Ramat Gan 52900, Israel · www.6. , . , . #12; " Planning Organization & Logistics Deputy Director General Tel: 03 531 8553 : Fax: 03 535

Adin, Ron

458

Journal of Crystal Growth 195 (1998) 309--313 Structural and optical properties of AlInN and AlGaInN  

E-Print Network [OSTI]

and cladding layers in quantum well (QW) laser diode (LD) structures, respectively [1--3]. In contrast, little- ful: Al In N can be lattice-matched to GaN; consequently, Al \\V In V N can be used as a cladding

Wetzel, Christian M.

459

Gallium nitride junction field-effect transistor  

DOE Patents [OSTI]

An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

Zolper, John C. (Albuquerque, NM); Shul, Randy J. (Albuquerque, NM)

1999-01-01T23:59:59.000Z

460

ATLAS ATLAS ATLAS ATLAS  

E-Print Network [OSTI]

for fibres ffl base \\Pi deposit gold traces for wire bonding, VCSEL and PIN placement February 4, 2000 ATLASATLAS ATLAS ATLAS ATLAS Status of Alternative Optical Package R&D K.K. Gan Ohio State University February 4, 2000 ATLAS Pixel Week Outline of Talk ffl Introduction ffl Status ffl Plans February 4, 2000

Gan, K. K.

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

ATLAS ATLAS ATLAS ATLAS  

E-Print Network [OSTI]

\\Pi deposit gold traces for wire bonding, VCSEL and PIN placements June 13, 2000 ATLAS Pixel WeekATLAS ATLAS ATLAS ATLAS Status of Alternative Optical Package R&D K.K. Gan Ohio State University June 13, 2000 ATLAS Pixel Week Outline of Talk ffl Introduction ffl Status ffl Plan June 13, 2000 ATLAS

Gan, K. K.

462

ATLAS ATLAS ATLAS ATLAS  

E-Print Network [OSTI]

for fibres ffl base \\Pi deposit gold traces for wire bonding, VCSEL and PIN placement December 1, 1999 ATLAS ATLAS ATLAS ATLAS Plan ffl use Hybrid Tek to fabricate bases with alumina and deposit thin gold tracesATLAS ATLAS ATLAS ATLAS Status of Alternative Optical Package R&D K.K. Gan Ohio State University

Gan, K. K.

463

ATLAS ATLAS ATLAS ATLAS  

E-Print Network [OSTI]

ATLAS ATLAS ATLAS ATLAS Status of Alternative Optical Package R&D K.K. Gan Ohio State University September 22, 1999 ATLAS Week Outline of Talk ffl SCT optical package ffl Alternative optical package ffl Status ffl Plans September 22, 1999 ATLAS Week Status of Alternative Optical Package R&D (page 1) K

Gan, K. K.

464

ATLAS ATLAS ATLAS ATLAS  

E-Print Network [OSTI]

ATLAS ATLAS ATLAS ATLAS Status of DORIC Test System K.K. Gan Ohio State University November 29, 1999 ATLAS Pixel Week Outline of Talk ffl Introduction ffl Fixed Data Pattern Testing ffl Pseudo­random Data Pattern Testing ffl Quick Look of DORIC­P November 29, 1999 ATLAS Pixel Week Status of DORIC Test

Gan, K. K.

465

ATLAS Upgrade Week 1 November 11, 2009  

E-Print Network [OSTI]

ATLAS Upgrade Week 1 November 11, 2009 Proposal to Develop On-Detector Array-based Optical Link A. Maettig Universität Wuppertal K.K. Gan A. Pellegrino, T. Sluijk NIKHEF (LHCb) #12;ATLAS Upgrade Week 2;ATLAS Upgrade Week 3 Introduction VCSEL and PIN are available in three forms: single channel or 4

Gan, K. K.

466

Observation of photoluminescence from Al1 xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy  

E-Print Network [OSTI]

Observation of photoluminescence from Al1 xInxN heteroepitaxial films grown by metalorganic vapor have observed photoluminescence of Al1 xInxN films. The films were grown on GaN by atmospheric pressure-temperature deposited AlN buffer layer. Photoluminescence, absorption, and x-ray diffraction measurements have shown

Wetzel, Christian M.

467

Multicolor, High Efficiency, Nanotextured LEDs  

SciTech Connect (OSTI)

We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and green for Solid State Lighting applications. Accomplishments in the duration of the contract period include (i) heteroepitaxy of nitrogen-polar LEDs on sapphire, (ii) heteroepitaxy of semipolar (11{bar 2}2) green LEDs on sapphire, (iii) synthesis of quantum-dot loaded nanoporous GaN that emits white light without phosphor conversion, (iv) demonstration of the highest quality semipolar (11{bar 2}2) GaN on sapphire using orientation-controlled epitaxy, (v) synthesis of nanoscale GaN and InGaN medium, and (vi) development of a novel liftoff process for manufacturing GaN thin-film vertical LEDs. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

Jung Han; Arto Nurmikko

2011-09-30T23:59:59.000Z

468

2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim p s scurrent topics in solid state physics  

E-Print Network [OSTI]

directing elements for light emitting devices. Many recent activities in the NSAG field have focused on Ga. Comparison of the stress properties between the nanodots, nanostripes, and continu- ous GaN film grown by metal organic vapor phase epitaxy. By varying the growth reactor pressure, we have been able to grow

Sirenko, Andrei

469

ORIGINAL PAPER C. Bech J. E. stnes  

E-Print Network [OSTI]

mainly allocate energy to the growth of `energy-processing' or- gans (such as the intestine and liver) rather than to `energy-consuming' organs. Key words European shag á Body composition á Intestine á Liver Department of Zoology, Norwegian University of Science and Technology, N-7491 Trondheim, Norway e-mail: claus

Bech, Claus

470

Defect Tolerant Semiconductors for Solar Energy Conversion  

Science Journals Connector (OSTI)

Defect Tolerant Semiconductors for Solar Energy Conversion ... He obtained his Ph.D. in Physics at Paris-Sud University where he modeled Hot Carrier Solar Cells by means of Ensemble Monte Carlo methods. ... These surface energies are significantly lower compared to 96 and 102 meV/Å2 for (1010) and (1120) low energy nonpolar GaN surfaces respectively. ...

Andriy Zakutayev; Christopher M. Caskey; Angela N. Fioretti; David S. Ginley; Julien Vidal; Vladan Stevanovic; Eric Tea; Stephan Lany

2014-03-13T23:59:59.000Z

471

Gallium nitride junction field-effect transistor  

DOE Patents [OSTI]

An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.

Zolper, J.C.; Shul, R.J.

1999-02-02T23:59:59.000Z

472

HYDROGEN LOCAL VIBRATIONAL MODES IN COMPOUND SEMICONDUCTORS  

E-Print Network [OSTI]

HYDROGEN LOCAL VIBRATIONAL MODES IN COMPOUND SEMICONDUCTORS M.D. MCCLUSKEY* University) spectroscopy of hydrogen and deuterium in GaP, AlSb, ZnSe, and GaN has provided important information about the structures of dopant- hydrogen complexes and their interaction with the host lattice. In GaN:Mg, for example

McCluskey, Matthew

473

Facile Fabrication of Free-Standing Light Emitting Diode by Combination of Wet Chemical Etchings  

Science Journals Connector (OSTI)

Facile Fabrication of Free-Standing Light Emitting Diode by Combination of Wet Chemical Etchings ... Free-standing GaN light-emitting diode (LED) structure with high crystalline quality was fabricated by combining electrochemical and photoelectrochemical etching followed by regrowth of LED structure and subsequent mechanical detachment from a substrate. ...

Lee-Woon Jang; Dae-Woo Jeon; Tae-Hoon Chung; Alexander Y. Polyakov; Han-Su Cho; Jin-Hyeon Yun; Jin-Woo Ju; Jong-Hyeob Baek; Joo-Won Choi; In-Hwan Lee

2013-12-25T23:59:59.000Z

474

REPRODUCTIONRESEARCH Reproductive traits in captive and free-ranging males of the  

E-Print Network [OSTI]

endangered Iberian lynx (Lynx pardinus) Natalia Gan~a´n1 , Adria´n Sestelo2 , J Julia´n Garde3 , Fernando , Francisco Palomares7 , Montserrat Gomendio1 and Eduardo R S Roldan1,8 1 Reproductive Ecology and Biology Veterinary College, NW1 0TU London, UK Correspondence should be addressed to E R S Roldan at Reproductive

Museo Nacional de Ciencias Naturales

475

Late Ordovician brachiopod communities of southeast China  

Science Journals Connector (OSTI)

...studies (Wang and Jin 1964; Rong and Han...Platform; B, Zhe-Xi Slope; C, Zhe-Wan...part of the Zhe-Xi Slope (loc. 10...their communities (Jin and Zhan 2001). The Ordovician...534. a µ Wang Yu, Jin Yu-gan . 1964. Brachiopods...Yi-ting, Zhou Xiao-ping, Shi Gui-jun...

Ren-bin Zhan; Jia-yu Rong; Jisuo Jin; L.R.M. Cocks

476

CX-009889: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

25A2445 - Ammonothermal Bulk GaN Crystal Growth for Energy Efficient Lighting CX(s) Applied: B3.6 Date: 01/15/2010 Location(s): New York Offices(s): Advanced Research Projects Agency-Energy

477

Wide Bandgap Materials  

Broader source: Energy.gov (indexed) [DOE]

Program Targets WBG devices maybe the enabling technology to meet the VTP inverter targets: - 13.4 kWl, 3.3 kW and 14.1 kWkg * Industrial suppliers of SiC and GaN...

478

Patterns of Aging  

Science Journals Connector (OSTI)

...Richardson, in Handbook of the Biology of...The Aging Immune System: Primer and Prospectus...or-gans, or culture systems, in ways that con-found...produce only partial restoration of T cell responses...3. D. C. Powers and R. B. Belshe...R. A. Miller, Handbook of Physiology...

Katrina L. Kelner; Jean Marx

1996-07-05T23:59:59.000Z

479

An Integrated Symbolic and Neural Network Architecture for Machine Learning in the Domain of Nuclear Engineering  

E-Print Network [OSTI]

of Nuclear Engineering Ephraim Nissan Hava Siegelmann Alex Galperin Mathematics Industrial Engineering Nuclear Engineering Bar-Ilan University Technion Ben-Gurion University Ramat-Gan, Israel Haifa, Israel, respectively, expert systems for engineering, and neural networks, we have defined and designed a new phase

Siegelmann , Hava T

480

Oak Ridge National Laboratory - Airport Information  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Search There are lots of things to look for at ORNL, and we've got lots of ways to find them. If you can't find what you need using the tools on this page, let us know and we'll...

Note: This page contains sample records for the topic "gan airport gan" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Massachusetts state airport system plan forecasts.  

E-Print Network [OSTI]

This report is a first step toward updating the forecasts contained in the 1973 Massachusetts State System Plan. It begins with a presentation of the forecasting techniques currently available; it surveys and appraises the ...

Mathaisel, Dennis F. X.

482

Essays on airport and airway congestion  

E-Print Network [OSTI]

Runway and airspace congestion are the primary causes of flight delays in the US. These delays cost airlines and airline customers billions of dollars per year. This thesis consists of two essays. The first essay focuses ...

Schorr, Raphael Avram, 1976-

2006-01-01T23:59:59.000Z

483

Airports and the General Conformity Process  

E-Print Network [OSTI]

Emissions SOURCE: The Boeing Company (http://www.boeing.com/Modes SOURCE: The Boeing Company (http://www.boeing.com/Deliveries SOURCE: The Boeing Company, Current Market

Amin, Ratna S.

2001-01-01T23:59:59.000Z

484

AirportRoad State St. (SR 26)  

E-Print Network [OSTI]

G H 10000 250 500 Stop light PURDUE UNIVERSITY W E S T L A F A Y E T T E C A M P U S W i r e l e Intramural Playing Field s Horticulture Park Intramural Playing Field s Intramural Playing Field s Purdue

485

Microsoft Word - Airport_EA_Final.doc  

National Nuclear Security Administration (NNSA)

garbage, refuse, sludge from a waste treatment plant, water supply treatment plant, or air pollution control facility, and other discarded material, including solid, liquid,...

486

Shikun Binui Arison Group | Open Energy Information  

Open Energy Info (EERE)

Shikun Binui Arison Group Shikun Binui Arison Group Jump to: navigation, search Name Shikun & Binui Arison Group Place Ramat Gan, Israel Zip 55215 Product String representation "Shikun & Binui ... gy and ecology." is too long. References Shikun & Binui Arison Group[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Shikun & Binui Arison Group is a company located in Ramat Gan, Israel . References ↑ "Shikun & Binui Arison Group" Retrieved from "http://en.openei.org/w/index.php?title=Shikun_Binui_Arison_Group&oldid=350967" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes Special pages Printable version

487

ARM MJO Investigation Experiment on  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

5 5 ARM MJO Investigation Experiment on Gan Island (AMIE-Gan) Science Plan October 2011-March 2012 C Long Principal Investigator A Del Genio P May M Deng S McFarlane X Fu P Minnis W Gustafson C Schumacher R Houze A Vogelmann C Jakob Y Wang M Jensen P Webster R Johnson S Xie X Liu C Zhang E Luke April 2011 DISCLAIMER This report was prepared as an account of work sponsored by the U.S. Government. Neither the United States nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights.

488

CX-009000: Categorical Exclusion Determination | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

0: Categorical Exclusion Determination 0: Categorical Exclusion Determination CX-009000: Categorical Exclusion Determination "High Quality, Low Cost Bulk Gallium Nitride (GaN) Substrates Grown by the Electrochemical Solution Growth Method CX(s) Applied: A9, B3.6 Date: 08/20/2012 Location(s): Missouri Offices(s): Golden Field Office The U.S. Department of Energy (DOE) is proposing to provide federal funding to MEMC Electronic Materials, Inc. MEMC would conduct research and development activities for a two phase project to develop a new process method for growing large bulk gallium nitrate (GaN) crystals at low cost with improved functional properties." CX-009000.pdf More Documents & Publications CX-000845: Categorical Exclusion Determination Energy Storage Systems 2010 Update Conference Presentations - Day 3,

489

Categorical Exclusion Determinations: Arkansas | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Arkansas Arkansas Categorical Exclusion Determinations: Arkansas Location Categorical Exclusion Determinations issued for actions in Arkansas. DOCUMENTS AVAILABLE FOR DOWNLOAD September 16, 2013 CX-010974: Categorical Exclusion Determination Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory September 16, 2013 CX-010973: Categorical Exclusion Determination Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory

490

Solid-State Lighting Issue 11: Selected Business & Technology News  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

1: BUSINESS AND TECHNOLOGY NEWS 1: BUSINESS AND TECHNOLOGY NEWS (Mid-October 2001 to early February 2002) A selection of news appears in this section. Where possible, links to full-text articles and press releases have been included in the abstracts. Click on the links in the table below to go directly to the abstract. Table of Contents: Business and Technology News · Arima Optoelectronics will expand ultra-high-brightness LED production. · AXT producing brighter AlInGaN HB-LEDs; company expanding fab facilities in China. · BMDO changing its name to the Missile Defense Agency (MDA). · Brown University/Agilent/Lumileds researchers create a monolithic dual-wavelength InGaN LED. · Cermet receives BMDO contracts to develop bulk GaN substrate and GaN FET technology.

491

Document  

Broader source: Energy.gov (indexed) [DOE]

720 Federal Register 720 Federal Register / Vol. 75, No. 117 / Friday, June 18, 2010 / Notices We reference the regulations outlining the terms and conditions of an award in the Applicable Regulations section of this notice and include these and other specific conditions in the GAN. The GAN also incorporates your approved application as part of your binding commitments under the grant. 3. Grant Administration: Projects funded under this competition are encouraged to budget for a two-day meeting for project directors to be held annually in Washington, DC. 4. Reporting: At the end of your project period, you must submit a final performance report, including financial information, as directed by the Secretary. If you receive a multi-year award, you must submit an annual

492

ARM - PI Product - Combined Retrieval, Microphysical Retrievals & Heating  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ProductsCombined Retrieval, Microphysical Retrievals & ProductsCombined Retrieval, Microphysical Retrievals & Heating Rates Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send PI Product : Combined Retrieval, Microphysical Retrievals & Heating Rates 2011.10.11 - 2012.02.07 Site(s) GAN General Description Microphysical retrievals and heating rates from the AMIE/Gan deployment using the PNNL Combined Retrieval. The PNNL Combined Remote Sensor retrieval algorithm (CombRet) is designed to retrieve cloud and precipitation properties for all sky conditions. The retrieval is based on a combination of several previously published retrievals, with new additions related to the retrieval of cloud microphysical properties when only one instrument is able to detect cloud (i.e. radar only or lidar only).

493

ARM - Feature Stories and Releases Article  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

November 16, 2010 [Feature Stories and Releases] November 16, 2010 [Feature Stories and Releases] Future Field Campaigns Span Atlantic Ocean to Indian Ocean Bookmark and Share Each year, the ARM Climate Research Facility reviews proposals to use key components of the Facility for extended field campaigns. The Department of Energy recently announced the selection of major ARM field campaigns that will take place from 2011 through 2014. Studies led by principal investigators Chuck Long, Carl Berkowitz, and Scot Martin will examine atmospheric circulation in the tropics, and aerosol-cloud interactions in the North Atlantic and Amazon Basin, respectively. ARM MJO Investigation Experiment on Gan Island (AMIE-Gan). Led by Chuck Long of Pacific Northwest National Laboratory, this campaign is part of a large international research effort involving two island-based and two

494

VGAN_R3_070102  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

3 3 June 2002 Virtual Global Accelerator Network (VGAN) Raymond S. Larsen Stanford Linear Accelerator Center Stanford University Menlo Park, California Abstract: The concept of a Global Accelerator Network (GAN) has been proposed by key members of ICFA as a cornerstone of a future International Linear Collider. GAN would provide a tool for the participants of an international collaboration to participate in the actual running of the machine from different parts of the world. Some technical experts view the concept as technologically trivial, and instead point out the significant sociological organizational and administrative problems to be surmounted in creating a truly workable system. This note proposes that many real issues can be explored by building a simulator

495

X-ray determination of threading dislocation densities in GaN/Al{sub 2}O{sub 3}(0001) films grown by metalorganic vapor phase epitaxy  

SciTech Connect (OSTI)

Densities of a- and a+c-type threading dislocations for a series of GaN films grown in different modes by metalorganic vapor phase epitaxy are determined from the x-ray diffraction profiles in skew geometry. The reciprocal space maps are also studied. Theory of x-ray scattering from crystals with dislocations is extended in order to take into account contribution from both threading and misfit dislocations. The broadening of the reciprocal space maps along the surface normal and the rotation of the intensity distribution ellipse is attributed to misfit dislocations at the interface. We find that the presence of a sharp AlN/GaN interface leads to an ordering of misfit dislocations and reduces strain inhomogeneity in GaN films.

Kopp, Viktor S., E-mail: victor.kopp@pdi-berlin.de; Kaganer, Vladimir M. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin (Germany); Baidakova, Marina V.; Lundin, Wsevolod V.; Nikolaev, Andrey E.; Verkhovtceva, Elena V.; Yagovkina, Maria A. [Ioffe Physical-Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, 194021 St.-Petersburg (Russian Federation); Cherkashin, Nikolay [CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse (France)

2014-02-21T23:59:59.000Z

496

Neutron detection using boron gallium nitride semiconductor material  

SciTech Connect (OSTI)

In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to ?-rays but poor sensitivity to ?-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after ?-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

Atsumi, Katsuhiro [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Inoue, Yoku; Nakano, Takayuki, E-mail: ttnakan@ipc.shizuoka.ac.jp [Department of Electrical and Materials Science, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Mimura, Hidenori; Aoki, Toru [Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011 (Japan)

2014-03-01T23:59:59.000Z

497

The influence of prestrained metalorganic vapor phase epitaxial gallium-nitride templates on hydride vapor phase epitaxial growth  

Science Journals Connector (OSTI)

We have varied the strain situation in metalorganic vapor phase epitaxial (MOVPE) grown gallium-nitride (GaN) by exchanging the nucleation layer and by inserting a submono-Si x N y -interlayer in the first few hundred nanometers of growth on sapphire substrates. The influence on the MOVPE template and subsequent hydride vapor phase epitaxial (HVPE) growth could be shown by in-situ measurements of the sample curvature. Using the results of these investigations we have established a procedure to confine the curvature development in MOVPE and HVPE growth to a minimum. By increasing the layer thickness in HVPE we could create self-separated freestanding GaN layers with small remaining curvature.

2014-01-01T23:59:59.000Z

498

In situ chemical sensing in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor deposition process for real-time  

E-Print Network [OSTI]

; accepted 14 June 2005; published 18 July 2005 Gallium nitride and its alloys promise to be key materials.1116/1.1993616 I. INTRODUCTION In recent years, gallium-nitride GaN - and aluminum- gallium-nitride AlGaN -based are grown at high temperatures e.g., up to 1100 °C using large concentrations of H2 carrier and NH3 N source

Rubloff, Gary W.

499

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 16, NO. 6, JUNE 2001 623 MetalSemiconductorMetal Traveling-Wave  

E-Print Network [OSTI]

in high-power distributed PD array or terahertz signal generation. Index Terms--Low-temperature-grown Ga­Semiconductor­Metal Traveling-Wave Photodetectors Jin-Wei Shi, Kian-Giap Gan, Yi-Jen Chiu, Yen-Hung Chen, Chi-Kuang Sun, Member-TWPD). Demonstrated devices were fabricated using low-temperature grown GaAs (LTG-GaAs). In order to achieve high

Bowers, John

500

DPF2011 1 August 12, 2011  

E-Print Network [OSTI]

: vendors: AOC, Optowell, ULM, Hamamatsu speed: up to 10 Gb/s results: identified following devices/s PIN arrays (2010): see next slides AOC 10 Gb/s VCSEL (2010): see next slides #12;K.K. Gan DPF of VCSEL 12 AOC arrays (10 Gb/s) irradiated to 8.0 x 1014 p/cm2 (24 GeV/c) alternate between

Gan, K. K.