National Library of Energy BETA

Sample records for gallium selenium cigs

  1. Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium

    DOE Patents [OSTI]

    Albin, David S.; Noufi, Rommel

    2015-06-09

    Systems and methods for solar cells with CIS and CIGS films made by reacting evaporated copper chlorides with selenium are provided. In one embodiment, a method for fabricating a thin film device comprises: providing a semiconductor film comprising indium (In) and selenium (Se) upon a substrate; heating the substrate and the semiconductor film to a desired temperature; and performing a mass transport through vapor transport of a copper chloride vapor and se vapor to the semiconductor film within a reaction chamber.

  2. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore »the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  3. Copper Indium Gallium Diselenide

    Broader source: Energy.gov [DOE]

    DOE supports innovative research focused on overcoming the current technological and commercial barreirs for copper indium gallium diselenide [Cu(InxGa1-x)Se2], or CIGS, solar cells. A list of...

  4. NREL scientists develop robust, high-performance IZO transparent contact for CIGS solar cells.

    E-Print Network [OSTI]

    NREL scientists develop robust, high-performance IZO transparent contact for CIGS solar cells indium gallium diselenide (CIGS) solar cell is zinc oxide (ZnO). The problem is that unprotected Zn improve humidity resistance in CIGS solar cells. Key Result This new method yields increased product

  5. Comparative alternative materials assessment to screen toxicity hazards in the life cycle of CIGS thin film photovoltaics

    E-Print Network [OSTI]

    Eisenberg, DA; Yu, M; Lam, CW; Ogunseitan, OA; Schoenung, JM

    2013-01-01

    Ga)(S,Se) 2 based thin ?lm photovoltaics: present status andcycle of CIGS thin ?lm photovoltaics Daniel A. Eisenberg a ,selenium–sul?de Thin ?lm photovoltaics Life cycle thinking a

  6. (Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2009. One company in Utah

    E-Print Network [OSTI]

    diselenide (CIGS) thin film solar cell. The company's CIGS material utilizes a flexible substrate that allows), photodetectors, and solar cells, represented 31% of gallium demand. The remaining 2% was used in research in the United States decreased to between $450 and $500 per kilogram. Several records for solar cell efficiency

  7. Preparation of CIGS-based solar cells using a buffered electrodeposition bath

    DOE Patents [OSTI]

    Bhattacharya, Raghu Nath (Littleton, CO)

    2007-11-20

    A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.

  8. Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells

    E-Print Network [OSTI]

    Rockett, Angus

    Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A conversion efficiency of solar cells made from this material [1]. One of the special qualities of the CIGS improve the solar cell performance. In many of the different CIGS fabrication techniques, an in depth

  9. CIG07 Hawaii Honolulu 1 Old-fashioned Computer Go

    E-Print Network [OSTI]

    Bouzy, Bruno

    CIG07 Hawaii Honolulu 1 Old-fashioned Computer Go vs Monte-Carlo Go Bruno Bouzy (Paris 5 University) CIG07 Tutorial April 1 2007 #12;CIG07 Hawaii Honolulu 2 Outline Computer Go (CG) overview Rules Go #12;CIG07 Hawaii Honolulu 3 Rules overview through a game (opening 1) Black and White move

  10. Effects of Metastabilities on CIGS Photovoltaic Modules

    Broader source: Energy.gov [DOE]

    This poster describes a SunShot Initiative solar project led by a team from Nexcis Photovoltaic Technology entitled "Effects of Metastabilities on CIGS Photovoltaic Modules." The team studied the driving force of the mechanisms which governs the different observed phases during storage, light exposition and annealing. The aim of this study is to obtain a better understanding of this phenomenon and hence a better evaluation of its impact on solar panel reliability.

  11. Stress Induced Degradation Modes in CIGS Mini-Modules: Preprint

    SciTech Connect (OSTI)

    Kempe, M. D.; Terwilliger, K. M.; Tarrant, D.

    2008-05-01

    This study demonstrates that the method of encapsulation can affect the long-term stability of CIGS modules, principally through interactions with the ZnO.

  12. Cost and Potential of Monolithic CIGS Photovoltaic Modules (Presentati...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Cost and Potential of Monolithic CIGS Photovoltaic Modules IEEE Photovoltaic Specialists Conference, New Orleans Kelsey A. W. Horowitz and Michael Woodhouse June 17, 2015 NREL...

  13. CIGS Material and Device Stability: A Processing Perspective (Presentation)

    SciTech Connect (OSTI)

    Ramanathan, K.

    2012-03-01

    This is a general overview of CIGS material and device fundamentals. In the first part, the basic features of high efficiency CIGS absorbers and devices are described. In the second part, some examples of previous collaboration with Shell Solar CIGSS graded absorbers and devices are shown to illustrate how process information was used to correct deviations and improve the performance and stability.

  14. Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO), Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

    1998-08-08

    High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

  15. Commercialization of High Efficiency Low Cost CIGS Technology Based on Electroplating: Final Technical Progress Report, 28 September 2007 - 30 June 2009

    SciTech Connect (OSTI)

    Basol, B.

    2010-08-01

    This report describes SoloPower's work as a Photovoltaic Technology Incubator awardee within the U.S. Department of Energy's Solar Energy Technologies Program. The term of this subcontract with the National Renewable Energy Laboratory was two years. The project focused on SoloPower's electrodeposition-based copper indium gallium (di)selenide (CIGS) technology. Under this subcontract, SoloPower improved the quality of its flexible metal substrates, increased the size of its solar cells from 0.5 cm2 to 120 cm2, increased the small-area cell efficiencies from near 11% to near 14%, demonstrated large-area cells, and developed a module manufacturing process.

  16. NREL: Awards and Honors - Lightweight, Flexible, Thin-Film CIGS...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to them, for example, the CIGS systems: Are lighter, more flexible and portable; Are more efficient and reliable; Have two to three times the power-to-weight ratio; Have more than...

  17. Method of junction formation for CIGS photovoltaic devices

    DOE Patents [OSTI]

    Delahoy, Alan E.

    2006-03-28

    Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.

  18. Method of junction formation for CIGS photovoltaic devices

    DOE Patents [OSTI]

    Delahoy, Alan E. (Rocky Hill, NJ)

    2010-01-26

    Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.

  19. Comparative alternative materials assessment to screen toxicity hazards in the life cycle of CIGS thin film photovoltaics

    E-Print Network [OSTI]

    Eisenberg, DA; Yu, M; Lam, CW; Ogunseitan, OA; Schoenung, JM

    2013-01-01

    aspects of ?exible CIGS solar cells and modules, Sol. Energycell technologies [2,3]. CIGS solar cells are comprised oflayers are used in CIGS solar cells, as illustrated in Table

  20. CIGS Solar Cell on Flexible Stainless Steel Substrate Fabricated by Sputtering Method: Simulation and Experimental Results

    E-Print Network [OSTI]

    Kanicki, Jerzy

    CIGS Solar Cell on Flexible Stainless Steel Substrate Fabricated by Sputtering Method: Simulation-electronic properties of the Cu(InGa)Se2(CIGS) solar cell fabricated by sputtering method on stainless steel substrate are consistent with each other. 1. Introduction Flexible Cu In Ga Se (CIGS) solar cells are very attractive

  1. Numerical Modeling of CIGS Solar Cells: Definition of the Baseline and

    E-Print Network [OSTI]

    Sites, James R.

    Thesis Numerical Modeling of CIGS Solar Cells: Definition of the Baseline and Explanation our supervision by Markus Gloeckler entitled "Numerical Modeling of CIGS Solar Cells: Definition. A three-layer structure, simulating a Cu(InGa)Se2 (CIGS) heterojunction solar cell, was set up using

  2. DISSERTATION THE EFFECT OF TRAPPING DEFECTS ON CIGS SOLAR-CELL

    E-Print Network [OSTI]

    Sites, James R.

    DISSERTATION THE EFFECT OF TRAPPING DEFECTS ON CIGS SOLAR-CELL PERFORMANCE Submitted by Pamela K ENTITLED THE EFFECT OF TRAPPING DEFECTS ON CIGS SOLAR-CELL PERFORMANCE BE ACCEPTED AS FULFILLING IN PART RE OF DISSERTATION THE EFFECT OF TRAPPING DEFECTS ON CIGS SOLAR-CELL PERFORMANCE The relationship between basic solar-cell

  3. Measuring sheet resistance of CIGS solar cell's window layer by spatially resolved electroluminescence imaging

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1/12 Measuring sheet resistance of CIGS solar cell's window layer by spatially resolved model to simulate the behavior of CIGS solar cells based on the spread sheet resistance effect on the determination of the window layer sheet resistance in CIGS solar cells, but our approach could be transferred

  4. Synthesis, characterization, and exciton dynamics of II-VI semiconducting nanomaterials and ab-initio studies for applications in explosives sensing

    E-Print Network [OSTI]

    Cooper, Jason Kyle

    2013-01-01

    gallium diselenide (CIGS) solar cells were studied. TheCIGS (copper indium gallium diselenide) thin film solar cells

  5. Characterization and Analysis of CIGS and CdTE Solar Cells: December 2004 - July 2008

    SciTech Connect (OSTI)

    Sites, J. R.

    2009-01-01

    The work reported here embodies a device-physics approach based on careful measurement and interpretation of data from CIGS and CdTe solar cells.

  6. NREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2012-09-01

    Researchers at the National Renewable Energy Laboratory (NREL) are finding new ways to manufacture thin-film solar cells made from copper, indium, gallium, and selenium - called CIGS cells - that are different than conventional CIGS solar cells. Their use of high-temperature glass, designed by SCHOTT AG, allows higher fabrication temperatures, opening the door to new CIGS solar cells employing light-absorbing materials with wide 'bandgaps.'

  7. NUMERICAL MODELING OF CIGS AND CdTe SOLAR CELLS: SETTING THE BASELINE

    E-Print Network [OSTI]

    Sites, James R.

    NUMERICAL MODELING OF CIGS AND CdTe SOLAR CELLS: SETTING THE BASELINE M. Gloeckler, A important complications that are often found in experimental CIGS and CdTe solar cells. 1. INTRODUCTION Numerical modeling of polycrystalline thin-film solar cells is an important strategy to test the viability

  8. A Fuzzy Approach For The 2007 CIG Simulated Car Racing Competition

    E-Print Network [OSTI]

    Parker, Gary B.

    A Fuzzy Approach For The 2007 CIG Simulated Car Racing Competition Duc Thang Ho and Jonathan M of the 2007 IEEE Congress on Evolutionary Computation (CEC2007) and the CIG2007 car racing competitions, the competition results are given. I. INTRODUCTION Car racing is a challenging problem, attracting public

  9. TOWARDS CIGS SOLAR CELLS WITH REDUCED FILM THICKNESS: A STUDY OF OPTICAL PROPERTIES AND OF PHOTONIC STRUCTURES FOR LIGHT TRAPPING

    E-Print Network [OSTI]

    TOWARDS CIGS SOLAR CELLS WITH REDUCED FILM THICKNESS: A STUDY OF OPTICAL PROPERTIES AND OF PHOTONIC ABSTRACT: In view of large-scale exploitation of CuIn1-xGaxSe2 (CIGS) solar cells for photovoltaic energy. In this work we perform a full study of optical properties of CIGS solar cells grown by a hybrid sputtering

  10. DISTORTIONS TO CURRENT-VOLTAGE CURVES OF CIGS CELLS WITH SPUTTERED Zn(O,S) BUFFER LAYERS

    E-Print Network [OSTI]

    Sites, James R.

    alternative to CdS for (CIGS) thin-film solar cells' buffer layer. It has a higher band gap and thus allows to current- voltage (J-V) curves of sputtered-Zn(O,S)/CIGS solar cells. A straightforward photodiode model partner in the CIGS team, and Russell for showing me the solar cells characterization, and John, Jen

  11. Cost and Potential of Monolithic CIGS Photovoltaic Modules

    SciTech Connect (OSTI)

    Horowitz, Kelsey; Woodhouse, Michael

    2015-06-17

    A bottom-up cost analysis of monolithic, glass-glass Cu(In,Ga)(Se,S)2 (CIGS) modules is presented, illuminating current cost drivers for this technology and possible pathways to reduced cost. At 14% module efficiency, for the case of U.S. manufacturing, a manufacturing cost of $0.56/WDC and a minimum sustainable price of $0.72/WDC were calculated. Potential for reduction in manufacturing costs to below $0.40/WDC in the long-term may be possible if module efficiency can be increased without significant increase in $/m2 costs. The levelized cost of energy (LCOE) in Phoenix, AZ under different conditions is assessed and compared to standard c-Si.

  12. CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and...

    Office of Scientific and Technical Information (OSTI)

    No. DE-AC36-99-GO10337 Conference Paper NRELCP-520-37020 January 2005 CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and Accomplishments K. Ramanathan, R.N....

  13. Swiss Federal Laboratories for Materials Science and Technology Advances in Thin Film PV: CIGS & CdTe

    E-Print Network [OSTI]

    Canet, Léonie

    and Photovoltaics Thin film solar cells based on compound semiconductor absorbers: CIGS and CdTe High efficiency: http://www.nrel.gov/ncpv/images/efficiency_chart.jpg 20.4% flexible CIGS solar cell record by Empa #12 solar cells 1µm Substrate Mo CIGS Buffer ZnO/ZnO:Al 15 20 25 30 100 300 500 700 900 Cu [at%] t

  14. Potential effects of gallium on cladding materials

    SciTech Connect (OSTI)

    Wilson, D.F.; Beahm, E.C.; Besmann, T.M.; DeVan, J.H.; DiStefano, J.R.; Gat, U.; Greene, S.R.; Rittenhouse, P.L.; Worley, B.A.

    1997-10-01

    This paper identifies and examines issues concerning the incorporation of gallium in weapons derived plutonium in light water reactor (LWR) MOX fuels. Particular attention is given to the more likely effects of the gallium on the behavior of the cladding material. The chemistry of weapons grade (WG) MOX, including possible consequences of gallium within plutonium agglomerates, was assessed. Based on the calculated oxidation potentials of MOX fuel, the effect that gallium may have on reactions involving fission products and possible impact on cladding performance were postulated. Gallium transport mechanisms are discussed. With an understanding of oxidation potentials and assumptions of mechanisms for gallium transport, possible effects of gallium on corrosion of cladding were evaluated. Potential and unresolved issues and suggested research and development (R and D) required to provide missing information are presented.

  15. Comparative alternative materials assessment to screen toxicity hazards in the life cycle of CIGS thin film photovoltaics

    E-Print Network [OSTI]

    Eisenberg, DA; Yu, M; Lam, CW; Ogunseitan, OA; Schoenung, JM

    2013-01-01

    market supply for consumer solar panels. Although CIGS isadvocate photovoltaic (solar) panels as a sustainablesolar cells (found within solar panels) of greater than 19%

  16. GALLIUM--2001 29.1 By Deborah A. Kramer

    E-Print Network [OSTI]

    GALLIUM--2001 29.1 GALLIUM By Deborah A. Kramer Domestic survey data and tables were prepared, a significant consumer of gallium arsenide (GaAs)-based devices. As the gallium demand declined during 2001 capacity expansions, very few additional expansions were announced in 2001. Because gallium nitride (Ga

  17. P-type gallium nitride

    DOE Patents [OSTI]

    Rubin, Michael (Berkeley, CA); Newman, Nathan (Montara, CA); Fu, Tracy (Berkeley, CA); Ross, Jennifer (Pleasanton, CA); Chan, James (Berkeley, CA)

    1997-01-01

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

  18. P-type gallium nitride

    DOE Patents [OSTI]

    Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

    1997-08-12

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

  19. Investigation of Some Transparent Metal Oxides as Damp Heat Protective Coating for CIGS Solar Cells: Preprint

    SciTech Connect (OSTI)

    Pern, F. J.; Yan, F.; Zaaunbrecher, B.; To, B.; Perkins, J.; Noufi, R.

    2012-10-01

    We investigated the protective effectiveness of some transparent metal oxides (TMO) on CIGS solar cell coupons against damp heat (DH) exposure at 85oC and 85% relative humidity (RH). Sputter-deposited bilayer ZnO (BZO) with up to 0.5-um Al-doped ZnO (AZO) layer and 0.2-um bilayer InZnO were used as 'inherent' part of device structure on CdS/CIGS/Mo/SLG. Sputter-deposited 0.2-um ZnSnO and atomic layer deposited (ALD) 0.1-um Al2O3 were used as overcoat on typical BZO/CdS/CIGS/Mo/SLG solar cells. The results were all negative -- all TMO-coated CIGS cells exhibited substantial degradation in DH. Combining the optical photographs, PL and EL imaging, SEM surface micro-morphology, coupled with XRD, I-V and QE measurements, the causes of the device degradations are attributed to hydrolytic corrosion, flaking, micro-cracking, and delamination induced by the DH moisture. Mechanical stress and decrease in crystallinity (grain size effect) could be additional degrading factors for thicker AZO grown on CdS/CIGS.

  20. Sodium-Doped Molybdenum Targets for Controllable Sodium Incorporation in CIGS Solar Cells: Preprint

    SciTech Connect (OSTI)

    Mansfield, L. M.; Repins, I. L.; Glynn, S.; Carducci, M. D.; Honecker, D. M.; Pankow, J.; Young, M.; DeHart, C.; Sundaramoorthy, R.; Beall, C. L.; To, B.

    2011-07-01

    The efficiency of Cu(In,Ga)Se2 (CIGS) solar cells is enhanced when Na is incorporated in the CIGS absorber layer. This work examines Na incorporation in CIGS utilizing Na-doped Mo sputtered from targets made with sodium molybdate-doped (MONA) powder. Mo:Na films with varying thicknesses were sputtered onto Mo-coated borosilicate glass (BSG) or stainless steel substrates for CIGS solar cells. By use of this technique, the Na content of CIGS can be varied from near-zero to higher than that obtained from a soda-lime glass (SLG) substrate. Targets and deposition conditions are described. The doped Mo films are analyzed, and the resulting devices are compared to devices fabricated on Mo-coated SLG as well as Mo-coated BSG with NaF. Completed devices utilizing MONA exceeded 15.7% efficiency without anti-reflective coating, which was consistently higher than devices prepared with the NaF precursor. Strategies for minimizing adhesion difficulties are presented.

  1. Explanation of Light/Dark Superposition Failure in CIGS Solar Cells Markus Gloeckler, Caroline R. Jenkins, and James R. Sites

    E-Print Network [OSTI]

    Sites, James R.

    Explanation of Light/Dark Superposition Failure in CIGS Solar Cells Markus Gloeckler, Caroline R ABSTRACT CIGS solar cells in many cases show a failure of light/dark superposition of their current-V measurements under red light may also show an additional distortion, known historically as the "red kink

  2. Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate Presenter: Arpan Chakraborty, Soraa Inc. This...

  3. In-depth analysis of CIGS film for solar cells, structural and optical characterization

    E-Print Network [OSTI]

    Slobodskyy, A; ~Ulyanenkova, T; ~Doyle, S; Powalla, M; ~Baumbach, T; ~Lemmer, U

    2010-01-01

    Space-resolved X-ray diffraction measurements performed on gradient-etched CuIn$_{1-x}$Ga$_x$Se$_2$ (CIGS) solar cells provide information about stress and texture depth profiles in the absorber layer. An important parameter for CIGS layer growth dynamics, the absorber thickness-dependent stress in the molybdenum back contact is analyzed. Texturing of grains and quality of the polycrystalline absorber layer are correlated with the intentional composition gradients (band gap grading). Band gap gradient is determined by space-resolved photoluminescence measurements and correlated with composition and strain profiles.

  4. Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N. (Littleton, CO); Hasoon, Falah S. (Arvada, CO); Wiesner, Holm (Golden, CO); Keane, James (Lakewood, CO); Noufi, Rommel (Golden, CO); Ramanathan, Kannan (Golden, CO)

    1999-02-16

    A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.

  5. Semi-transparent perovskite solar cells for tandems with silicon and CIGS

    E-Print Network [OSTI]

    McGehee, Michael

    -bandgap solar technology without adding much cost is to deposit a high bandgap polycrystalline semiconductorSemi-transparent perovskite solar cells for tandems with silicon and CIGS Colin D. Bailie,a M on top to make a tandem solar cell. We use a transparent silver nanowire electrode on perovskite solar

  6. Production of selenium-72 and arsenic-72

    DOE Patents [OSTI]

    Phillips, D.R.

    1993-04-20

    Methods are described for producing selenium-72, separating it from its daughter isotope arsenic-72, and generating multiple portions of a solution containing arsenic-72 from a reusable parent substance comprised of selenium-72.

  7. Developing Market Opportunities for Flexible Rooftop Applications of PV Using Flexible CIGS Technology: Market Considerations

    SciTech Connect (OSTI)

    Sabnani, L.; Skumanich, A.; Ryabova, E.; Noufi, R.

    2011-01-01

    There has been a recent upsurge in developments for building-integrated phototovoltaics (BiPV) roof top materials based on CIGS. Several new companies have increased their presence and are looking to bring products to market for this application in 2011. For roof-top application, there are significant key requirements beyond just having good conversion efficiency. Other attributes include lightweight, as well as moisture-proof, and fully functionally reliable. The companies bringing these new BIPV/BAPV products need to ensure functionality with a rigorous series of tests, and have an extensive set of 'torture' tests to validate the capability. There is a convergence of form, aesthetics, and physics to ensure that the CIGS BiPV deliver on their promises. This article will cover the developments in this segment of the BiPV market and delve into the specific tests and measurements needed to characterize the products. The potential market sizes are evaluated and the technical considerations developed.

  8. Generator for gallium-68 and compositions obtained therefrom

    DOE Patents [OSTI]

    Neirinckx, Rudi D. (Medfield, MA); Davis, Michael A. (Westwood, MA)

    1981-01-01

    A generator for obtaining radioactive gallium-68 from germanium-68 bound in a resin containing unsubstituted phenolic hydroxyl groups. The germanium-68 is loaded into the resin from an aqueous solution of the germanium-68. A physiologically acceptable solution of gallium-68 having an activity of 0.1 to 50 millicuries per milliliter of gallium-68 solution is obtained. The solution is obtained from the bound germanium-68 which forms gallium-68 in situ by eluting the column with a hydrochloric acid solution to form an acidic solution of gallium-68. The acidic solution of gallium-68 can be neutralized.

  9. Chemical factors influencing selenium atomization 

    E-Print Network [OSTI]

    Buren, Mary Sue

    1980-01-01

    Atomization. (August 1980) Mary Sue Buren, B, S. , Angelo State University Chairman of Advisory Comm1ttee: Dr. Thomas M. Vickrey Selenium in an acid1c matrix was analyzed using graphite furnace atom1c absorption with Zeeman-effect background correct1on.... Nickel(II} and lanthanum( III) were introduced as matrix modifiers to determine their effect on interferences 1n selenium atom1zation. In add1tion to matr1x mod1ficat1on, surface coating the graphite furnace with z1rconium and tantalum salts was also...

  10. Delta-phase manganese gallium on gallium nitride: a magnetically tunable spintronic system

    E-Print Network [OSTI]

    Delta-phase manganese gallium on gallium nitride: a magnetically tunable spintronic system Kangkang to their potential for novel spintronics applications such as spin light-emitting diodes[1] . Delta phase manganese slightly the Mn:Ga atom concentration. While many important spintronics properties, such as spin injection

  11. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, J.C.; Shul, R.J.

    1999-02-02

    An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.

  12. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, John C. (Albuquerque, NM); Shul, Randy J. (Albuquerque, NM)

    1999-01-01

    An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

  13. CIGS P1, P2, P3 Scribing Processes using a Pulse Programmable Industrial Fiber Laser: Preprint

    SciTech Connect (OSTI)

    Rekow, M.; Murison, R.; Panarello, T.; Dunsky, C.; Dinkel, C.; Nikumb, S.; Pern, F. J.; Mansfield, L.

    2010-10-01

    We describe a novel set of laser processes for the CIGS P1, P2 and P3 scribing steps, the development of which has been enabled by a unique pulse-programmable fiber laser. We find that the unique pulse control properties of this 1064 nm wavelength laser have significant effects on the material removal dynamics of the various film layers in the CIGS material system. In the case of the P2 and P3 processes, the shaped pulses create new laser/material interaction effects that permit the material to be cleanly and precisely removed with zero Heat Affected Zone (HAZ) at the edges of the scribe. The new P2 and P3 processes we describe demonstrate the first use of infrared nanosecond laser pulses that eliminate the HAZ and the consequent localized compositional changes in the CIGS absorber material that result in poor shunt resistance. SEM micrographs and EDX compositional scans are presented. For the P1 scribe, we process the bi-layer molybdenum from the film side as well as through the glass substrate. Microscopic inspection and compositional analysis of the scribe lines are not sufficient to determine electrical and optical performance in working PV modules. Therefore, to demonstrate the applicability of the infrared pulse-programmable laser to all three scribing processes for thin-film CIGS, we fabricate small-size multiple-cell monolithically interconnected mini-modules in partnership with the National Renewable Energy Laboratory (Golden, Colorado). A total of four mini-modules are produced, two utilizing all laser scribing, and two with the P2 and P3 steps mechanically scribed (by a third party) for reference. Mini-module performance data measured at NREL is presented, and we also discuss the commercialization potential of the new single-laser CIGS scribing process. Finally we present a phenomenological model to describe this physics underlying this novel ablation process.

  14. Production of selenium-72 and arsenic-72

    DOE Patents [OSTI]

    Phillips, D.R.

    1994-12-06

    Methods and apparatus are described for producing selenium-72, separating it from its daughter isotope arsenic-72, and generating multiple portions of a solution containing arsenic-72 from a reusable parent substance comprised of selenium-72. The invention provides apparatus which can be located at a site where arsenic-72 is used, for purposes such as PET imaging, to produce arsenic-72 as needed, since the half-life of arsenic-72 is very short. 2 figures.

  15. Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor

    DOE Patents [OSTI]

    Dhere, Neelkanth G.; Kadam, Ankur A.

    2009-12-15

    A method of forming a CIGSS absorber layer includes the steps of providing a metal precursor, and selenizing the metal precursor using diethyl selenium to form a selenized metal precursor layer (CIGSS absorber layer). A high efficiency solar cell includes a CIGSS absorber layer formed by a process including selenizing a metal precursor using diethyl selenium to form the CIGSS absorber layer.

  16. Photovoltaic manufacturing cost and throughput improvements for thin-film CIGS-based modules: Phase 1 technical report, July 1998--July 1999

    SciTech Connect (OSTI)

    Wiedeman, S.; Wendt, R.G.

    2000-03-01

    The primary objectives of the Global Solar Energy (GSE) Photovoltaic Manufacturing Technology (PVMaT) subcontract are directed toward reducing cost and expanding the production rate of thin-film CuInGaSe{sub 2} (CIGS)-based PV modules on flexible substrates. Improvements will be implemented in monolithic integration, CIGS deposition, contact deposition, and in-situ CIGS control and monitoring. In Phase 1, GSE has successfully attacked many of the highest risk aspects of each task. All-laser, selective scribing processes for CIGS have been developed, and many end-of-contract goals for scribing speed have been exceeded in the first year. High-speed ink-jet deposition of insulating material in the scribes now appears to be a viable technique, again exceeding some end-of-contract goals in the first year. Absorber deposition of CIGS was reduced corresponding to throughput speeds of up to 24-in/min, also exceeding an end-of-contract goal. Alternate back-contact materials have been identified that show potential as candidates for replacement of higher-cost molybdenum, and a novel, real-time monitoring technique (parallel-detector spectroscopic ellipsometry) has shown remarkable sensitivity to relevant properties of the CIGS absorber layer for use as a diagnostic tool. Currently, one of the bilayers has been baselined by GSE for flexible CIGS on polymeric substrates. Resultant back-contacts meet sheet-resistance goals and exhibit much less intrinsic stress than Mo. CIGS has been deposited, and resultant devices are comparable in performance to pure Mo back-contacts. Debris in the chamber has been substantially reduced, allowing longer roll-length between system cleaning.

  17. Predicted roles of defects on band offsets and energetics at CIGS (Cu(In,Ga)Se2/CdS) solar cell interfaces and implications for improving performance

    E-Print Network [OSTI]

    Goddard III, William A.

    Predicted roles of defects on band offsets and energetics at CIGS (Cu(In,Ga)Se2/CdS) solar cell (2014) Predicted roles of defects on band offsets and energetics at CIGS (Cu(In,Ga)Se2/CdS) solar cell ZnO sputtering on the performance of Cu(In,Ga)Se2 thin film solar cells Appl. Phys. Lett. 105, 083906

  18. Investigation of the Effect of I-ZnO Window Layer on the Device Performance of the Cd-Free CIGS Based Solar Cells: Preprint

    SciTech Connect (OSTI)

    Hasoon, F. S.; Al-Thani, H. A.; Li, X.; Kanevce, A.; Perkins, C.; Asher, S.

    2008-05-01

    This paper focuses on preparing Cd-free, CIGS-based solar cells with intrinsic high resistivity ZnO (I-ZnO) films deposited by metal-organic chemical vapor deposition (MOCVD) technique at different deposition substrate temperature and I-ZnO film thickness, and the effect of the prior treatment of CIGS films by ammonium hydroxide (NH4OH) diluted solution on the device performance.

  19. Laser photochemistry of gallium-containing compounds. [Trimethylgallium

    SciTech Connect (OSTI)

    Baughcum, S.L.; Oldenborg, R.C.

    1986-01-01

    The production of gas-phase gallium atoms in the photolysis of trimethylgallium has been investigated at 193 nm and at other laser wavelengths. Ground state (4 /sup 2/P/sup 0//sub 1/2) and metastable (4 /sup 2/P/sup 0//sub 3/2/) gallium atoms are detected using laser-induced fluorescence techniques. Our results indicate that gallium atoms continue to be produced at long times after the laser pulse. The observed dependence on photolysis laser fluence, trimethylgallium pressure, and buffer gas pressure are consistent with a mechanism in which highly excited gallium methyl radicals undergo unimolecular decomposition to produce gallium atoms. Since this process is observed to happen on the time scale of hundreds of microseconds, these results have important implications for studies of metal deposition and direct laser writing by laser photolysis of organometallic compounds. 31 refs., 5 figs.

  20. Effect of selenium and vitamin E on risk of prostate cancer and other cancers: The selenium and vitamin E cancer prevention trial (SELECT)

    E-Print Network [OSTI]

    2009-01-01

    PR, Albanes D. Selenium, vitamin E, and prostate cancer--Effect of Selenium and Vitamin E on Risk of Prostate CancerOther Cancers: The Selenium and Vitamin E Cancer Prevention

  1. High-resolution imaging of selenium in kidneys: a localized selenium pool associated with glutathione peroxidase 3

    SciTech Connect (OSTI)

    Malinouski, M.; Kehr, S.; Finney, L.; Vogt, S.; Carlson, B.A.; Seravalli, J.; Jin, R.; Handy, D.E.; Park, T.J.; Loscalzo, J.; Hatfield, D.L.; Gladyshev, V.N.

    2012-04-17

    Recent advances in quantitative methods and sensitive imaging techniques of trace elements provide opportunities to uncover and explain their biological roles. In particular, the distribution of selenium in tissues and cells under both physiological and pathological conditions remains unknown. In this work, we applied high-resolution synchrotron X-ray fluorescence microscopy (XFM) to map selenium distribution in mouse liver and kidney. Liver showed a uniform selenium distribution that was dependent on selenocysteine tRNA{sup [Ser]Sec} and dietary selenium. In contrast, kidney selenium had both uniformly distributed and highly localized components, the latter visualized as thin circular structures surrounding proximal tubules. Other parts of the kidney, such as glomeruli and distal tubules, only manifested the uniformly distributed selenium pattern that co-localized with sulfur. We found that proximal tubule selenium localized to the basement membrane. It was preserved in Selenoprotein P knockout mice, but was completely eliminated in glutathione peroxidase 3 (GPx3) knockout mice, indicating that this selenium represented GPx3. We further imaged kidneys of another model organism, the naked mole rat, which showed a diminished uniformly distributed selenium pool, but preserved the circular proximal tubule signal. We applied XFM to image selenium in mammalian tissues and identified a highly localized pool of this trace element at the basement membrane of kidneys that was associated with GPx3. XFM allowed us to define and explain the tissue topography of selenium in mammalian kidneys at submicron resolution.

  2. Reversible expansion of gallium-stabilized (delta)-plutonium

    SciTech Connect (OSTI)

    Wolfer, W G; Oudot, B; Baclet, N

    2006-02-27

    It is shown that the transient expansion of plutonium-gallium alloys observed both in the lattice parameter as well as in the dimension of a sample held at ambient temperature can be explained by assuming incipient precipitation of Pu{sub 3}Ga. However, this ordered {zeta}-phase is also subject to radiation-induced disordering. As a result, the gallium-stabilized {delta}-phase, being metastable at ambient temperature, is driven towards thermodynamic equilibrium by radiation-enhanced diffusion of gallium and at the same time reverted back to its metastable state by radiation-induced disordering. A steady state is reached in which only a modest fraction of the gallium present is arranged in ordered {zeta}-phase regions.

  3. Generator for ionic gallium-68 based on column chromatography

    DOE Patents [OSTI]

    Neirinckx, Rudi D. (Medfield, MA); Davis, Michael A. (Westwood, MA)

    1981-01-01

    A physiologically acceptable solution of gallium-68 fluorides, having an activity of 0.1 to 50 millicuries per milliliter of solution is provided. The solution is obtained from a generator comprising germanium-68 hexafluoride bound to a column of an anion exchange resin which forms gallium-68 in situ by eluting the column with an acid solution to form a solution containing .sup.68 Ga-fluorides. The solution then is neutralized prior to administration.

  4. Cavity optomechanics in gallium phosphide microdisks

    SciTech Connect (OSTI)

    Mitchell, Matthew; Barclay, Paul E.; Hryciw, Aaron C.

    2014-04-07

    We demonstrate gallium phosphide (GaP) microdisk optical cavities with intrinsic quality factors >2.8?×?10{sup 5} and mode volumes <10(?/n){sup 3}, and study their nonlinear and optomechanical properties. For optical intensities up to 8.0?×?10{sup 4} intracavity photons, we observe optical loss in the microcavity to decrease with increasing intensity, indicating that saturable absorption sites are present in the GaP material, and that two-photon absorption is not significant. We observe optomechanical coupling between optical modes of the microdisk around 1.5??m and several mechanical resonances, and measure an optical spring effect consistent with a theoretically predicted optomechanical coupling rate g{sub 0}/2??30?kHz for the fundamental mechanical radial breathing mode at 488?MHz.

  5. What You Need to Know about Selenium

    E-Print Network [OSTI]

    Hopkins, William A.

    of crude oil; mining of coal, phosphate, copper, and uranium~ and irrigated agriculture. Because 3.8.2 Selenium as a Global Problem............................................................ 32 3 is a common by-product of several core economic activities: coal- fired generation of electricity; refining

  6. Selenium in Oklahoma ground water and soil

    SciTech Connect (OSTI)

    Atalay, A.; Vir Maggon, D.

    1991-03-30

    Selenium with a consumption of 2 liters per day (5). The objectives of this study are: (1) to determine the concentrations of Se in Oklahoma ground water and soil samples. (2) to map the geographical distribution of Se species in Oklahoma. (3) to relate groundwater depth, pH and geology with concentration of Se.

  7. Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

    SciTech Connect (OSTI)

    Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.

    1990-12-01

    Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

  8. High-Efficiency CdTe and CIGS Thin-Film Solar Cells: Highlights and Challenges; Preprint

    SciTech Connect (OSTI)

    Noufi, R.; Zweibel, K.

    2006-05-01

    Thin-film photovoltaic (PV) modules of CdTe and Cu(In,Ga)Se2 (CIGS) have the potential to reach cost-effective PV-generated electricity. These technologies have transitioned from the laboratory to the market place. Pilot production and first-time manufacturing are ramping up to higher capacity and enjoying a flood of venture-capital funding. CIGS solar cells and modules have achieved 19.5% and 13% efficiencies, respectively. Likewise, CdTe cells and modules have reached 16.5% and 10.2% efficiencies, respectively. Even higher efficiencies from the laboratory and from the manufacturing line are only a matter of time. Manufacturing-line yield continues to improve and is surpassing 85%. Long-term stability has been demonstrated for both technologies; however, some failures in the field have also been observed, emphasizing the critical need for understanding degradation mechanisms and packaging options. The long-term potential of the two technologies require R&D emphasis on science and engineering-based challenges to find solutions to achieve targeted cost-effective module performance, and in-field durability. Some of the challenges are common to both, e.g., in-situ process control and diagnostics, thinner absorber, understanding degradation mechanisms, protection from water vapor, and innovation in high-speed processing and module design. Other topics are specific to the technology, such as lower-cost and fast-deposition processes for CIGS, and improved back contact and voltage for CdTe devices.

  9. Selenium Partitioning and Food-Chain Transfer at the Salton Sea

    E-Print Network [OSTI]

    Tobin, Jennifer Marie

    2011-01-01

    and R.A. Engberg. Environmental Chemistry of Selenium. NewWorld Examples. ” Environmental Chemistry of Selenium. Ed.and R.A. Engberg. Environmental Chemistry of Selenium. New

  10. High Efficiency CdTe and CIGS Thin Film Solar Cells: Highlights of the Technologies Challenges (Presentation)

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield MunicipalTechnical Report:Speeding accessby aLED Street LightingFrom theHigh Efficiency CdTe and CIGS

  11. STAR FORMATION IN THE EXTENDED GASEOUS DISK OF THE ISOLATED GALAXY CIG 96

    SciTech Connect (OSTI)

    Espada, D.; Sabater, J.; Verdes-Montenegro, L.; Sulentic, J.; Munoz-Mateos, J. C.; Gil de Paz, A.; Verley, S.; Leon, S.

    2011-07-20

    We study the Kennicutt-Schmidt star formation law and efficiency in the gaseous disk of the isolated galaxy CIG 96 (NGC 864), with special emphasis on its unusually large atomic gas (H I) disk (r{sub Hmathsci}/r{sub 25} = 3.5, r{sub 25} = 1.'85). We present deep Galaxy Evolution Explorer near- and far-UV observations, used as a recent star formation tracer, and we compare them with new, high-resolution (16''or 1.6 kpc) Very Large Array H I observations. The UV and H I maps show good spatial correlation outside the inner 1', where the H I phase dominates over H{sub 2}. Star-forming regions in the extended gaseous disk are mainly located along the enhanced H I emission within two (relatively) symmetric, giant gaseous spiral arm-like features, which emulate an H I pseudo-ring at r {approx_equal} 3'. Inside this structure, two smaller gaseous spiral arms extend from the northeast and southwest of the optical disk and connect to the previously mentioned H I pseudo-ring. Interestingly, we find that the (atomic) Kennicutt-Schmidt power-law index systematically decreases with radius, from N {approx_equal} 3.0 {+-} 0.3 in the inner disk (0.'8-1.'7) to N = 1.6 {+-} 0.5 in the outskirts of the gaseous disk (3.'3-4.'2). Although the star formation efficiency (SFE), the star formation rate per unit of gas, decreases with radius where the H I component dominates as is common in galaxies, we find that there is a break of the correlation at r = 1.5r{sub 25}. At radii 1.5r{sub 25} < r < 3.5r{sub 25}, mostly within the H I pseudo-ring structure, regions exist whose SFE remains nearly constant, SFE {approx_equal} 10{sup -11} yr{sup -1}. We discuss possible mechanisms that might be triggering the star formation in the outskirts of this galaxy, and we suggest that the constant SFE for such large radii (r > 2r{sub 25}) and at such low surface densities might be a common characteristic in extended UV disk galaxies.

  12. The leaching characteristics of selenium from coal fly ashes

    SciTech Connect (OSTI)

    Wang, T.; Wang, J.; Burken, J.G.; Ban, H.; Ladwig, K.

    2007-11-15

    The leaching characteristics of selenium from several bituminous and subbituminous coal fly ashes under different pH conditions were investigated using batch methods. Results indicated that pH had a significant effect on selenium leaching from bituminous coal ash. The minimum selenium leaching occurred in the pH range between 3 and 4, while the maximum selenium leaching occurred at pH 12. The release of selenium from subbituminous coal ashes was very low for the entire experimental pH range, possibly due to the high content of calcium which can form hydration or precipitation products as a sink for selenium. The adsorption results for different selenium species indicated that Se(VI) was hardly adsorbable on either bituminous coal ashes or subbitumminous coal ashes at any pH. However, Se(I) was highly adsorbed by bituminous coal ashes under acidic pH conditions and was mostly removed by subbitumminous coal ashes across the entire pH range. This result suggests that the majority of selenium released from the tested fly ashes was Se(IV). A speciation-based model was developed to simulate the adsorption of Se(IV) on bituminous coal fly ash, and the pH-independent adsorption constants of HSeO{sup 3-} and SeO{sub 3}{sup 2-} were determined. The modeling approach is useful for understanding and predicting the release process of selenium from fly ash.

  13. Gallium based low-interaction anions

    DOE Patents [OSTI]

    King, Wayne A. (Santa Fe, NM); Kubas, Gregory J. (Santa Fe, NM)

    2000-01-01

    The present invention provides: a composition of the formula M.sup.+x (Ga(Y).sub.4.sup.-).sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; a composition of the formula (R).sub.x Q.sup.+ Ga(Y).sub.4.sup.- where Q is selected from the group consisting of carbon, nitrogen, sulfur, phosphorus and oxygen, each R is a ligand selected from the group consisting of alkyl, aryl, and hydrogen, x is an integer selected from the group consisting of 3 and 4 depending upon Q, and each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; an ionic polymerization catalyst composition including an active cationic portion and a gallium based weakly coordinating anion; and bridged anion species of the formula M.sup.+x.sub.y [X(Ga(Y.sub.3).sub.z ].sup.-y.sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, magnesium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, X is a bridging group between two gallium atoms, y is an integer selected from the group consisting 1 and 2, z is an integer of at least 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide.

  14. Pyrolysis approach to the synthesis of gallium nitride nanorods Wei-Qiang Han and Alex Zettla)

    E-Print Network [OSTI]

    Zettl, Alex

    Pyrolysis approach to the synthesis of gallium nitride nanorods Wei-Qiang Han and Alex Zettla for publication 26 October 2001 Herein we describe a pyrolysis route to the synthesis of gallium nitride GaN nanorods. GaN nanorods have been grown by the pyrolysis of gallium dimethylamide and ferrocene under

  15. Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials

    DOE Patents [OSTI]

    Hogan, S.J.

    1983-03-13

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

  16. From Soil Aggregate to Watershed, from California's Central Valley to the Salton Sea - Agricultural Selenium Contamination across Ecosystems, Scales, and Disciplines

    E-Print Network [OSTI]

    Kausch, Matteo Francesco

    2013-01-01

    Bioremediation of selenium-contaminated sediments and water.1997a. Bioremediation of selenium in soil and water. SoilBioremediation of selenium-contaminated sediments and water.

  17. First results from the Soviet-American Gallium Experiment

    SciTech Connect (OSTI)

    Abazov, A.I.; Abdurashitov, D.N.; Anosov, O.L.; Eroshkina, L.A.; Faizov, E.L.; Gavrin, V.N.; Kalikhov, A.V.; Knodel, T.V.; Knyshenko, I.I.; Kornoukhov, V.N.; Mezentseva, S.A.; Mirmov, I.N.; Ostrinsky, A.I.; Petukhov, V.V.; Pshukov, A.M.; Revzin, N.Y.; Shikhin, A.A.; Timofeyev, P.V.; Veretenkin, E.P.; Vermul, V.M.; Zakharov, Y.; Zatsepin, G.T.; Zhandarov, V.I. . Inst. Yadernykh Issledovanij); Bowl

    1990-01-01

    The Soviet-American Gallium Experiment is the first experiment able to measure the dominant flux of low energy p-p solar neutrinos. Four extractions made during January to May 1990 from 30 tons of gallium have been counted and indicate that the flux is consistent with 0 SNU and is less than 72 SNU (68% CL) and less than 138 SNU (95% CL). This is to be compared with the flux of 132 SNU predicted by the Standard Solar Model. 10 refs., 4 figs., 1 tab.

  18. Ionic liquid-induced synthesis of selenium nanoparticles

    SciTech Connect (OSTI)

    Langi, Bhushan; Shah, Chetan; Singh, Krishankant; Chaskar, Atul; Kumar, Manmohan; Bajaj, Parma N.

    2010-06-15

    A simple wet chemical method has been used to synthesize selenium nanoparticles by the reaction of ionic liquid with sodium selenosulphate, a selenium precursor, in the presence of polyvinyl alcohol stabilizer, in aqueous medium. The method is capable of producing spherical selenium nanoparticles in the size range of 76-150 nm under ambient conditions. This is a first report on the production of nano-selenium assisted by an ionic liquid. The synthesized nanoparticles can be separated easily from the aqueous sol by a high-speed centrifuge machine, and can be re-dispersed in an aqueous medium. The synthesized selenium nanoparticles have been characterized by X-ray diffraction, energy dispersive X-ray analysis, differential scanning calorimetry and transmission electron microscopy techniques.

  19. Discovery of Gallium, Germanium, Lutetium, and Hafnium Isotopes

    E-Print Network [OSTI]

    Gross, J L

    2011-01-01

    Currently, twenty-eight gallium, thirty-one germanium, thirty-five lutetium, and thirty-six hafnium isotopes have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented.

  20. Discovery of Gallium, Germanium, Lutetium, and Hafnium Isotopes

    E-Print Network [OSTI]

    J. L. Gross; M. Thoennessen

    2011-09-28

    Currently, twenty-eight gallium, thirty-one germanium, thirty-five lutetium, and thirty-six hafnium isotopes have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented.

  1. Self- and zinc diffusion in gallium antimonide

    SciTech Connect (OSTI)

    Nicols, Samuel Piers

    2002-03-26

    The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT) [Dvorak, (2001)]. Many of the findings which will be reported here were previously published in three journal articles. Hartmut Bracht was the lead author on two articles on self-diffusion studies in GaSb [Bracht, (2001), (2000)], while this report's author was the lead author on Zn diffusion results [Nicols, (2001)]. Much of the information contained herein can be found in those articles, but a more detailed treatment is presented here.

  2. PROPERTIES OF Cd and Zn PARTIAL ELECTROLYTE TREATED CIGS SOLAR CELLS K. Ramanathan, F.S. Hasoon, S. Smith, A. Mascarenhas, H. Al-Thani, J. Alleman, H.S. Ullal and J. Keane

    E-Print Network [OSTI]

    Sites, James R.

    on the photovoltaic properties of CuInGaSe2 (CIGS) and CuIn- GaSSe2 (CIGSS) thin film absorbers. We find be used to produce efficient photovoltaic cells in CuInSe2 thin films [5]. In this report, we extend provided by Shell Solar Industries (SSI). EXPERIMENTAL CIGS thin films were grown by the three-stage proc

  3. Selenium Speciation and Management in Wet FGD Systems

    SciTech Connect (OSTI)

    Searcy, K; Richardson, M; Blythe, G; Wallschlaeger, D; Chu, P; Dene, C

    2012-02-29

    This report discusses results from bench- and pilot-scale simulation tests conducted to determine the factors that impact selenium speciation and phase partitioning in wet FGD systems. The selenium chemistry in wet FGD systems is highly complex and not completely understood, thus extrapolation and scale-up of these results may be uncertain. Control of operating parameters and application of scrubber additives have successfully demonstrated the avoidance or decrease of selenite oxidation at the bench and pilot scale. Ongoing efforts to improve sample handling methods for selenium speciation measurements are also discussed. Bench-scale scrubber tests explored the impacts of oxidation air rate, trace metals, scrubber additives, and natural limestone on selenium speciation in synthetic and field-generated full-scale FGD liquors. The presence and concentration of redox-active chemical species as well as the oxidation air rate contribute to the oxidation-reduction potential (ORP) conditions in FGD scrubbers. Selenite oxidation to the undesirable selenate form increases with increasing ORP conditions, and decreases with decreasing ORP conditions. Solid-phase manganese [Mn(IV)] appeared to be the significant metal impacting the oxidation of selenite to selenate. Scrubber additives were tested for their ability to inhibit selenite oxidation. Although dibasic acid and other scrubber additives showed promise in early clear liquor (sodium based and without calcium solids) bench-scale tests, these additives did not show strong inhibition of selenite oxidation in tests with higher manganese concentrations and with slurries from full-scale wet FGD systems. In bench-tests with field liquors, addition of ferric chloride at a 250:1 iron-to-selenium mass ratio sorbed all incoming selenite to the solid phase, although addition of ferric salts had no impact on native selenate that already existed in the field slurry liquor sample. As ORP increases, selenite may oxidize to selenate more rapidly than it sorbs to ferric solids. Though it was not possible to demonstrate a decrease in selenium concentrations to levels below the project�¢����s target of 50 ���µg/L during pilot testing, some trends observed in bench-scale testing were evident at the pilot scale. Specifically, reducing oxidation air rate and ORP tends to either retain selenium as selenite in the liquor or shift selenium phase partitioning to the solid phase. Oxidation air flow rate control may be one option for managing selenium behavior in FGD scrubbers. Units that cycle load widely may find it more difficult to impact ORP conditions with oxidation air flow rate control alone. Because decreasing oxidation air rates to the reaction tank showed that all �¢����new�¢��� selenium reported to the solids, the addition of ferric chloride to the pilot scrubber could not show further improvements in selenium behavior. Ferric chloride addition did shift mercury to the slurry solids, specifically to the fine particles. Several competing pathways may govern the reporting of selenium to the slurry solids: co-precipitation with gypsum into the bulk solids and sorption or co-precipitation with iron into the fine particles. Simultaneous measurement of selenium and mercury behavior suggests a holistic management strategy is best to optimize the fate of both of these elements in FGD waters. Work conducted under this project evaluated sample handling and analytical methods for selenium speciation in FGD waters. Three analytical techniques and several preservation methods were employed. Measurements of selenium speciation over time indicated that for accurate selenium speciation, it is best to conduct measurements on unpreserved, filtered samples as soon after sampling as possible. The capital and operating costs for two selenium management strategies were considered: ferric chloride addition and oxidation air flow rate control. For ferric chloride addition, as migh

  4. Exploration of Novel Reaction Pathway for Formation of Copper Indium Gallium Diselenide: Cooperative Research and Development Final Report, CRADA Number CRD-03-121

    SciTech Connect (OSTI)

    van Hest, M.

    2014-11-01

    The investigation will explore a potentially low-cost method of forming CIGS for use in solar cells. Investigators from HelioVolt will work in NREL laboratories to modify and apply our tools in fabrication of the CIGS layer. Investigators from NREL will assist in preparing substrates and in compleing solar cells composed of these CIGS layers to evaluate the effectiveness of the HelioVolt processes.

  5. Neutron detection using boron gallium nitride semiconductor material

    SciTech Connect (OSTI)

    Atsumi, Katsuhiro [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Inoue, Yoku; Nakano, Takayuki, E-mail: ttnakan@ipc.shizuoka.ac.jp [Department of Electrical and Materials Science, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Mimura, Hidenori; Aoki, Toru [Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011 (Japan)

    2014-03-01

    In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to ?-rays but poor sensitivity to ?-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after ?-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

  6. Indium-Gallium Segregation in CuIn$_{x}$Ga$_{1-x}$Se$_2$: An ab initio based Monte Carlo Study

    E-Print Network [OSTI]

    Ludwig, Christian D R; Felser, Claudia; Schilling, Tanja; Windeln, Johannes; Kratzer, Peter

    2010-01-01

    Thin-film solar cells with CuIn$_x$Ga$_{1-x}$Se$_2$ (CIGS) absorber are still far below their efficiency limit, although lab cells reach already 19.9%. One important aspect is the homogeneity of the alloy. Large-scale simulations combining Monte Carlo and density functional calculations show that two phases coexist in thermal equilibrium below room temperature. Only at higher temperatures, CIGS becomes more and more a homogeneous alloy. A larger degree of inhomogeneity for Ga-rich CIGS persists over a wide temperature range, which may contribute to the low observed efficiency of Ga-rich CIGS solar cells.

  7. Treating chronic arsenic toxicity with high selenium lentil diets

    SciTech Connect (OSTI)

    Sah, Shweta [Department of Ecosystem and Public Health, Faculty of Medicine, University of Calgary, Calgary, AB T2N 4Z6 (Canada); Vandenberg, Albert [Department of Plant Sciences, University of Saskatchewan, Saskatoon, SK S7N 5A8 (Canada); Smits, Judit, E-mail: judit.smits@ucalgary.ca [Department of Ecosystem and Public Health, Faculty of Veterinary Medicine, University of Calgary, Calgary, AB T2N 4Z6 (Canada)

    2013-10-01

    Arsenic (As) toxicity causes serious health problems in humans, especially in the Indo-Gangetic plains and mountainous areas of China. Selenium (Se), an essential micronutrient is a potential mitigator of As toxicity due to its antioxidant and antagonistic properties. Selenium is seriously deficient in soils world-wide but is present at high, yet non-toxic levels in the great plains of North America. We evaluate the potential of dietary Se in counteracting chronic As toxicity in rats through serum biochemistry, blood glutathione levels, immunotoxicity (antibody response), liver peroxidative stress, thyroid response and As levels in tissues and excreta. To achieve this, we compare diets based on high-Se Saskatchewan (SK) lentils versus low-Se lentils from United States. Rats drank control (0 ppm As) or As (40 ppm As) water while consuming SK lentils (0.3 ppm Se) or northwestern USA lentils (< 0.01 ppm Se) diets for 14 weeks. Rats on high Se diets had higher glutathione levels regardless of As exposure, recovered antibody responses in As-exposed group, higher fecal and urinary As excretion and lower renal As residues. Selenium deficiency caused greater hepatic peroxidative damage in the As exposed animals. Thyroid hormones, triiodothyronine (T3) and thyroxine (T4), were not different. After 14 weeks of As exposure, health indicators in rats improved in response to the high Se lentil diets. Our results indicate that high Se lentils have a potential to mitigate As toxicity in laboratory mammals, which we hope will translate into benefits for As exposed humans. - Highlights: • We reduce chronic arsenic toxicity in rats with a whole food solution. • High selenium lentils decrease liver damage and increase blood glutathione levels. • High selenium lentil diets increase urinary and fecal arsenic excretion. • High selenium lentil diets decrease arsenic levels in kidney, the storage organ. • High selenium lentil diets reverse arsenic suppression of the B cell response.

  8. Two-photon photovoltaic effect in gallium arsenide Jeff Chiles,1

    E-Print Network [OSTI]

    Fathpour, Sasan

    Two-photon photovoltaic effect in gallium arsenide Jichi Ma,1 Jeff Chiles,1 Yagya D. Sharma,2 214669); published September 4, 2014 The two-photon photovoltaic effect is demonstrated in gallium; (230.0250) Optoelectronics; (040.5350) Photovoltaic; (130.4310) Nonlinear. http://dx.doi.org/10.1364/OL

  9. Preliminary survey report: control technology for gallium arsenide processing at Morgan Semiconductor Division, Garland, Texas

    SciTech Connect (OSTI)

    Lenihan, K.L.

    1987-03-01

    The report covers a walk through survey made of the Morgan Semiconductor Facility in Garland, Texas, to evaluate control technology for gallium-arsenide dust in the semiconductor industry. Engineering controls included the synthesis of gallium-arsenide outside the crystal pullers to reduce arsenic residues in the pullers, also reducing worker exposure to arsenic during cleaning of the crystal pullers.

  10. IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 2, APRIL 2012 123 Gallium Arsenide Solar Cell Absorption

    E-Print Network [OSTI]

    Grandidier, Jonathan

    the cost of a solar cell compared with first-generation solar cells, usually at the expense of efficiencyIEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 2, APRIL 2012 123 Gallium Arsenide Solar Cell Absorption flat gallium arsenide solar cell, we show that it is possible to modify the flow of light and enhance

  11. Gallium-rich reconstructions on GaAs(001) M. Pristovsek*; 1

    E-Print Network [OSTI]

    Schmidt, Wolf Gero

    - tion High-Energy Electron Diffraction. Annealing or dosing gallium above about 800 K invariably re- layer of gallium, it transforms into a (4 Â 6) reconstruction. The observed translational symmetries, and to contribute to their microscopic understanding. To this end we combine in-situ Reflection High-Energy Electron

  12. EA-1686: Department of Energy Loan Guarantee to SoloPower Inc. for the Electrodeposition-based Copper indium gallium selenide (CIGS) Solar Technology Manufacturing Facility near San Jose, California

    Broader source: Energy.gov [DOE]

    EA cancelled due to a change in project scope; DOE prepared a categorical exclusion determination (8/15/11).

  13. Au-free Ohmic Contacts to Gallium Nitride and Graphene 

    E-Print Network [OSTI]

    Ravikirthi, Pradhyumna

    2014-08-10

    -sputtered contact. 20 3. AU-FREE SCHEME FOR GALLIUM NITRIDE 3.1. Survey of Au-free contacts in literature and scope for improvement For n-type GaN, it was observed that aluminium and gold form poor ohmic contacts (resistances in the order of 10-3 ?/cm2...] used Ti/Al and found better results for ohmic resistance compared to GaN[17]. However, Ti/Al contacts lost its stability at high temperatures due to formation of aluminium lumps on the surface, increasing its roughness and resistance. Fan et al [20...

  14. Fabrication of a gated gallium arsenide heterostructure resonant tunneling diode 

    E-Print Network [OSTI]

    Kinard, William Brian

    1989-01-01

    , . ' 'CONTACT PAD' PLANAR I ZED POLYAM I DE RECTIFYI CONTACT N DBHS Pig. 2. f'utavvay vieiv of a gated gallium arsenide heterostructure resonant tunneling diode 1018 graded from 10 18 io" 10? (lightly doped) units=cm 8 ?graded from 10 to 18...FABRICATION OF A GATED GALLIL". tl ARSEXIDE HETEROSTRL CTL RF. RESONANT TF'XXELI'XG DIODE A Thesis bt ttrILLIAAI BRIA'. s KI'iARD Subnut ted to the Office of Graduate Studies of Texas AE;M Eniverstty tn partial fulfillment of the requirements...

  15. JV Task - 116 Selenium's Role in the Seafood Safety Issue

    SciTech Connect (OSTI)

    Nicholas Ralston; Laura Raymond

    2009-03-30

    Continuing studies under these three funded projects - (JV Task 77 The Health Implications of the Mercury-Selenium Interaction, JV Task 96 Investigating the Importance of the Mercury-Selenium Interaction, and JV Task 116 Selenium's Role in the Seafood Safety Issue) - were performed to determine the effects of different levels of dietary mercury and selenium on the growth and development of test animals, and related tissue analyses, to understand the protective benefits of dietary selenium in reference to low-level exposure to mercury. Maternal exposure to methylmercury from seafood has been found to cause neurodevelopmental harm in children. However, significant nutritional benefits will be lost if fish consumption is needlessly avoided. The results of these studies support the hypothesis that intracellular Se itself is the physiologically important biomolecule and that the harm of mercury toxicity arises when Hg abundance becomes great enough to bind a significant portion of intracellular Se in vulnerable tissues such as the brain. Formation of HgSe limits bioavailability of Se for synthesis of Se-dependent enzymes, particularly in brain tissues. When production of these enzymes is impaired, the loss of their numerous essential functions results in the signs and symptoms of Hg toxicity. The finding that one mole of Se protects against many moles of Hg indicates that its beneficial effect is not due to sequestration of mercury as HgSe but rather due to the biological activity of the Se. Therefore, the selenium content of seafoods must be considered along with their methylmercury contents in evaluating the effect of dietary exposure to mercury.

  16. Layer-By-Layer Self-Assembly of CIGS Nanoparticles and Polymers for All-Solution Processable Low-Cost, High-Efficiency Solar Cells

    E-Print Network [OSTI]

    Zhou, Yaoqi

    -Cost, High-Efficiency Solar Cells Tung Ho1 , Robert Vittoe3 , Namratha Kakumanu2 , Sudhir Shrestha2-Purdue University Indianapolis (IUPUI), Indianapolis, IN 46202 Thin film solar cells made from copper indium gallium thereby affecting solar cell efficiency. This research aims to study various polymer materials to replace

  17. (Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2007. Indium-containing

    E-Print Network [OSTI]

    gallium diselenide (CIGS) solar cells require approximately 50 metric tons of indium to produce 1 gigawatt of solar power. Research was underway to develop a low-cost manufacturing process for flexible CIGS solar cells that would yield high productio

  18. 2010 Minerals Yearbook U.S. Department of the Interior

    E-Print Network [OSTI]

    cells to be used in the manufacture of new CIGS solar cells. Indium may be reclaimed directly from old and sputtering takes place. Indium can also be recovered from copper-indium-gallium- diselenide (CIGS) solar

  19. Novel ethylenediamine-gallium phosphate containing 6-fold coordinated gallium atoms with unusual four equatorial Ga–N bonds

    SciTech Connect (OSTI)

    Torre-Fernández, Laura [Departamentos de Química Física y Analítica y Química Orgánica e Inorgánica, Universidad de Oviedo-CINN, 33006 Oviedo (Spain); Espina, Aránzazu; Khainakov, Sergei A.; Amghouz, Zakariae [Servicios Científico Técnicos, Universidad de Oviedo, 33006 Oviedo (Spain); García, José R. [Departamentos de Química Física y Analítica y Química Orgánica e Inorgánica, Universidad de Oviedo-CINN, 33006 Oviedo (Spain); García-Granda, Santiago, E-mail: sgg@uniovi.es [Departamentos de Química Física y Analítica y Química Orgánica e Inorgánica, Universidad de Oviedo-CINN, 33006 Oviedo (Spain)

    2014-07-01

    A novel ethylenediamine-gallium phosphate, formulated as Ga(H{sub 2}NCH{sub 2}CH{sub 2}NH{sub 2}){sub 2}PO{sub 4}·2H{sub 2}O, was synthesized under hydrothermal conditions. The crystal structure, including hydrogen positions, was determined using single-crystal X-ray diffraction data (monoclinic, a=9.4886(3) Å, b=6.0374(2) Å, c=10.2874(3) Å, and ?=104.226(3)°, space group Pc) and the bulk was characterized by chemical (Ga–P–C–H–N) and thermal analysis (TG–MS and DSC), including activation energy data of its thermo-oxidative degradation, powder X-ray diffraction (PXRD), solid-state nuclear magnetic resonance (SS-NMR) measurements, and transmission electron microscopy (TEM, SAED/NBD, and STEM BF-EDX). The crystal structure is built up of infinite zig-zag chains running along the c-axis, formed by vertex-shared (PO{sub 4}) and (GaO{sub 2}N{sub 4}) polyhedra. The new compound is characterized by unusual four equatorial Ga–N bonds coming from two nonequivalent ethylenediamine molecules and exhibits strong blue emission at 430 nm (?{sub ex}=350 nm) in the solid state at room temperature. - Graphical abstract: Single crystals of a new ethylenediamine-gallium phosphate, Ga(H{sub 2}NCH{sub 2}CH{sub 2}NH{sub 2}){sub 2}PO{sub 4}·2H{sub 2}O, were obtained and the structural features presented. This structure is one of the scarce examples of GaPO with Ga–N bonds reported. - Highlights: • A novel ethylenediamine-gallium phosphate was hydrothermally synthesized. • The new compound is characterized by unusual four equatorial Ga–N bonds. • Void-volume analysis shows cages and channels with sizes ideally suited to accommodate small molecules. • The new compound exhibits strong blue emission.

  20. The role of gallium in the catalytic activity of zeolite [Si,Ga]-ZSM-5 for methanol conversion

    SciTech Connect (OSTI)

    Lalik, E.; Xinsheng Liu; Klinowski, J. [Univ. of Cambridge (United Kingdom)

    1992-01-23

    The authors report results from use of aluminium-free zeolytic catalysts, loaded with gallium to different levels, for the conversion of methanol. Work was done for temperatures up to 400{degrees}C. They find a strong dependence and selectivity for conversion to dimethyl ether with gallium content between 150 and 300{degrees}C. At higher temperatures they observe enhanced conversion of alkanes into aromatics. The graded gallium content allowed the authors to distinguish the gallium activity from that due to any trace aluminium impurities.

  1. Vitamin E and the risk of prostate cancer: Updated results of the Selenium and Vitamin E Cancer Prevention Trial (SELECT)

    E-Print Network [OSTI]

    2012-01-01

    10.1001/jama.2011.1437. Vitamin E and the Risk of Prostateof The Selenium and Vitamin E Cancer Prevention Trial (Effect of Selenium and Vitamin E on Risk of Prostate Cancer

  2. Design and Synthesis of Plasmonic Core/Shell Nanorods for Light Trapping in Organic Photo-Voltaics, Non-Linear Optics and Photo-Thermal Tumor Therapy

    E-Print Network [OSTI]

    Jankovic, Vladan

    2013-01-01

    solar cells, developed in the 1980s and based on amorphous or polycrystalline silicon (Si), copper indium gallium (di)selenide (CIGS), and

  3. IEEE Spectrum: Thin-Film Trick Makes Gallium Arsenide Devices Cheap http://spectrum.ieee.org/semiconductors/materials/thinfilm-trick-makes-gallium-arsenide-devices-cheap[5/22/2010 1:39:13 PM

    E-Print Network [OSTI]

    Rogers, John A.

    to man," says Rogers, a materials engineer. Some GaAs solar cells can convert about 40 percent of the sun // MATERIALS NEWS Thin-Film Trick Makes Gallium Arsenide Devices Cheap Rubber-stamping makes creating solarIEEE Spectrum: Thin-Film Trick Makes Gallium Arsenide Devices Cheap http://spectrum.ieee.org

  4. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2001-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  5. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2002-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  6. What controls selenium release during shale weathering? Adriana Matamoros-Veloza

    E-Print Network [OSTI]

    Benning, Liane G.

    What controls selenium release during shale weathering? Adriana Matamoros-Veloza , Robert J can clearly separate the proportions of Se present in the sulphide versus the organic pools in shales and pyrite oxidation will control the release of selenium during shale weathering. Ó 2011 Elsevier Ltd. All

  7. Selenium and Lung Cancer: A Quantitative Analysis of Heterogeneity in the Current

    E-Print Network [OSTI]

    California at Berkeley, University of

    Selenium and Lung Cancer: A Quantitative Analysis of Heterogeneity in the Current Epidemiological on sele- nium and lung cancer and identify sources of heterogeneity among studies. When all studies were.30). Overall, these results suggest that selenium may have some protective effect against lung cancer

  8. The design, construction, and testing of a nuclear fuel rod thermal simulation system to study gallium/Zircaloy interactions 

    E-Print Network [OSTI]

    Allison, Christopher Curtis

    1999-01-01

    The presence of gallium in weapons grade plutonium has raised many questions concerning its use in light water reactor (LWR) fuel rods. The biggest concern is that the gallium will migrate down the thermal gradient in the fuel rod and deposit...

  9. Spin-phonon coupling in scandium doped gallium ferrite

    SciTech Connect (OSTI)

    Chakraborty, Keka R. E-mail: smyusuf@barc.gov.in; Mukadam, M. D.; Basu, S.; Yusuf, S. M. E-mail: smyusuf@barc.gov.in; Paul, Barnita; Roy, Anushree; Grover, Vinita; Tyagi, A. K.

    2015-03-28

    We embarked on a study of Scandium (Sc) doped (onto Ga site) gallium ferrite (GaFeO{sub 3}) and found remarkable magnetic properties. In both doped as well as parent compounds, there were three types of Fe{sup 3+} ions (depending on the symmetry) with the structure conforming to space group Pna2{sub 1} (Sp. Grp. No. 33) below room temperature down to 5?K. We also found that all Fe{sup 3+} ions occupy octahedral sites, and carry high spin moment. For the higher Sc substituted sample (Ga{sub 1?x}Sc{sub x}FeO{sub 3}: x?=?0.3), a canted magnetic ordered state is found. Spin-phonon coupling below Néel temperature was observed in doped compounds. Our results indicated that Sc doping in octahedral site modifies spin-phonon interactions of the parent compound. The spin-phonon coupling strength was estimated for the first time in these Sc substituted compounds.

  10. Hydrogenation of palladium rich compounds of aluminium, gallium and indium

    SciTech Connect (OSTI)

    Kohlmann, H.

    2010-02-15

    Palladium rich intermetallic compounds of aluminium, gallium and indium have been studied before and after hydrogenation by powder X-ray diffraction and during hydrogenation by in situ thermal analysis (DSC) at hydrogen gas pressures up to 39 MPa and temperatures up to 700 K. Very weak DSC signals and small unit cell increases of below 1% for AlPd{sub 2}, AlPd{sub 3}, GaPd{sub 2}, Ga{sub 5}Pd{sub 13}, In{sub 3}Pd{sub 5}, and InPd{sub 2} suggest negligible hydrogen uptake. In contrast, for both tetragonal modifications of InPd{sub 3} (ZrAl{sub 3} and TiAl{sub 3} type), heating to 523 K at 2 MPa hydrogen pressure leads to a rearrangement of the intermetallic structure to a cubic AuCu{sub 3} type with an increase in unit cell volume per formula unit by 3.6-3.9%. Gravimetric analysis suggests a composition InPd{sub 3}H{sub a}pprox{sub 0.8} for the hydrogenation product. Very similar behaviour is found for the deuteration of InPd{sub 3}. - Graphical abstract: In situ differential scanning calorimetry of the hydrogenation of tetragonal InPd{sub 3} (ZrAl{sub 3} type) at 1.3 MPa hydrogen pressure.

  11. Deposition of metallic gallium on re-crystallized ceramic material during focused ion beam milling

    SciTech Connect (OSTI)

    Muñoz-Tabares, J.A.; Reyes-Gasga, J.

    2013-12-15

    We report a new kind of artifact observed in the preparation of a TEM sample of zirconia by FIB, which consists in the deposition of metallic gallium nano-dots on the TEM sample surface. High resolution TEM images showed a microstructure of fine equiaxed grains of ? 5 nm, with some of them possessing two particular characteristics: high contrast and well-defined fast Fourier transform. These grains could not be identified as any phase of zirconia but it was possible to identify them as gallium crystals in the zone axis [110]. Based on HRTEM simulations, the possible orientations between zirconia substrate and deposited gallium are discussed in terms of lattice mismatch and oxygen affinity. - Highlights: • We show a new type of artifact induced during preparation of TEM samples by FIB. • Deposition of Ga occurs due to its high affinity for oxygen. • Materials with small grain size (? 5 nm) could promote Ga deposition. • Small grain size permits the elastic accommodation of deposited Ga.

  12. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    SciTech Connect (OSTI)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

    2015-05-15

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  13. 2011 Minerals Yearbook U.S. Department of the Interior

    E-Print Network [OSTI]

    Cs) and optoelectronic devices [laser diodes, light-emitting diodes (lEDs), photodetectors, and solar cells]. Gallium solar energy systems by about 75%, and thereby allow copper-indium-gallium diselenide (CiGS) solar

  14. Crystal chemistry and self-lubricating properties of monochalcogenides gallium selenide and tin selenide

    SciTech Connect (OSTI)

    Erdemir, A.

    1993-02-01

    This paper describes the fundamentals of the crystal chemistry and self-lubricating mechanisms of two monochalcogenides; tin selenide and gallium selenide. Specifically, it enumerates their inter-atomic array and bond structure in crystalline states, and correlates this fundamental knowledge with their self-lubricating capacity. Friction tests assessing the self-lubricating performance of gallium and tin selenides were carried out on a pin-on-disk machine. Specifically, large crystalline pieces of gallium selenide and tin selenide were cut and cleaved into flat squares and subsequently rubbed against the sapphire balls. In another case, the fine powders (particle size {approx} 50--100 {mu}m) of gallium selenide and tin selenide were manually fed into the sliding interfaces of 440C pins and 440C disks. For the specific test conditions explored, it was found that the friction coefficients of the sapphire/gallium selenide and sapphire/tin selenide pairs were {approx} 0.23 and {approx} 0.35, respectively. The friction coefficients of 440C pin/440C disk test pairs with gallium selenide and tin selenide powders were on the orders of {approx} 0.22 and {approx} 0.38, respectively. For comparison, a number of parallel friction tests were performed with MoS{sub 2} powders and compacts and the results of these tests were also reported. The friction data together with the crystal-chemical knowledge and the electron microscopic evidence supported the conclusion that the lubricity and self-lubricating mechanisms of these solids are closely related to their crystal chemistry and the nature of interlayer bonding.

  15. Percolation of gallium dominates the electrical resistance of focused ion beam deposited metals

    SciTech Connect (OSTI)

    Faraby, H. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States); DiBattista, M. [Qualcomm Technologies Incorporated, San Diego, California 92121 (United States); Bandaru, P. R., E-mail: pbandaru@ucsd.edu [Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

    2014-04-28

    Metal deposition through focused ion beam (FIB) based systems is thought to result in material composed of the primary metal from the metallo-organic precursor in addition to carbon, oxygen, and gallium. We determined, through electrical resistance and chemical composition measurements on a wide range of FIB deposited platinum and tungsten lines, that the gallium ion (Ga{sup +}) concentration in the metal lines plays the dominant role in controlling the electrical resistivity. Effective medium theory, based on McLachlan's formalisms, was used to describe the relationship between the Ga{sup +} concentration and the corresponding resistivity.

  16. Results of the Gallium-Clad Phase 3 and Phase 4 tasks (canceled prior to completion)

    SciTech Connect (OSTI)

    Morris, R.N.

    1998-08-01

    This report summarizes the results of the Gallium-Clad interactions Phase 3 and 4 tasks. Both tasks were to involve examining the out-of-pile stability of residual gallium in short fuel rods with an imposed thermal gradient. The thermal environment was to be created by an electrical heater in the center of the fuel rod and coolant flow on the rod outer cladding. Both tasks were canceled due to difficulties with fuel pellet fabrication, delays in the preparation of the test apparatus, and changes in the Fissile Materials Disposition program budget.

  17. In vitro bio-functionality of gallium nitride sensors for radiation biophysics

    SciTech Connect (OSTI)

    Hofstetter, Markus; Howgate, John; Schmid, Martin; Schoell, Sebastian; Sachsenhauser, Matthias; Adiguezel, Denis; Stutzmann, Martin; Sharp, Ian D.; Thalhammer, Stefan

    2012-07-27

    Highlights: Black-Right-Pointing-Pointer Gallium nitride based sensors show promising characteristics to monitor cellular parameters. Black-Right-Pointing-Pointer Cell growth experiments reveal excellent biocompatibiltiy of the host GaN material. Black-Right-Pointing-Pointer We present a biofunctionality assay using ionizing radiation. Black-Right-Pointing-Pointer DNA repair is utilized to evaluate material induced alterations in the cellular behavior. Black-Right-Pointing-Pointer GaN shows no bio-functional influence on the cellular environment. -- Abstract: There is an increasing interest in the integration of hybrid bio-semiconductor systems for the non-invasive evaluation of physiological parameters. High quality gallium nitride and its alloys show promising characteristics to monitor cellular parameters. Nevertheless, such applications not only request appropriate sensing capabilities but also the biocompatibility and especially the biofunctionality of materials. Here we show extensive biocompatibility studies of gallium nitride and, for the first time, a biofunctionality assay using ionizing radiation. Analytical sensor devices are used in medical settings, as well as for cell- and tissue engineering. Within these fields, semiconductor devices have increasingly been applied for online biosensing on a cellular and tissue level. Integration of advanced materials such as gallium nitride into these systems has the potential to increase the range of applicability for a multitude of test devices and greatly enhance sensitivity and functionality. However, for such applications it is necessary to optimize cell-surface interactions and to verify the biocompatibility of the semiconductor. In this work, we present studies of mouse fibroblast cell activity grown on gallium nitride surfaces after applying external noxa. Cell-semiconductor hybrids were irradiated with X-rays at air kerma doses up to 250 mGy and the DNA repair dynamics, cell proliferation, and cell growth dynamics of adherent cells were compared to control samples. The impact of ionizing radiation on DNA, along with the associated cellular repair mechanisms, is well characterized and serves as a reference tool for evaluation of substrate effects. The results indicate that gallium nitride does not require specific surface treatments to ensure biocompatibility and suggest that cell signaling is not affected by micro-environmental alterations arising from gallium nitride-cell interactions. The observation that gallium nitride provides no bio-functional influence on the cellular environment confirms that this material is well suited for future biosensing applications without the need for additional chemical surface modification.

  18. Inorganic arrangement crystal beryllium, lithium, selenium and silicon

    E-Print Network [OSTI]

    Gobato, Ricardo; Fedrigo, Desire Francine Gobato

    2015-01-01

    The use of inorganic crystals technology has been widely date. Since quartz crystals for watches in the nineteenth century, and common way radio in the early twentieth century, to computer chips with new semiconductor materials. Chemical elements such as beryllium, lithium, selenium and silicon, are widely used in technology. The development of new crystals arising from that arrangement can bring technological advances in several areas of knowledge. The likely difficulty of finding such crystals in nature or synthesized, suggest an advanced study of the subject. A study using computer programs with ab initio method was applied. As a result of the likely molecular structure of the arrangement of a crystal was obtained.

  19. Riley oxidation: A forgotten name reaction for synthesis of selenium nanoparticles

    SciTech Connect (OSTI)

    Shah, Chetan P.; Dwivedi, Charu; Singh, Krishan K.; Kumar, Manmohan; Bajaj, Parma N.

    2010-09-15

    A simple wet chemical method, involving reaction of acetone with selenium dioxide, has been developed, to synthesize polyvinyl alcohol-stabilized selenium nanoparticles. The method is capable of producing nanoparticles in the size range of about 100-300 nm, under ambient conditions. The synthesized nanoparticles can be separated easily from the aqueous sols by a high-speed centrifuge, and can be re-dispersed in aqueous medium by a sonicator. The effect of concentrations of selenium dioxide, acetone and PVA on the size of the selenium nanoparticles has been studied. The size of the selenium nanoparticles has been found to increase with increase in the reaction time as well as the concentration of selenium dioxide, while it decreases with increase in the concentration of the stabilizer, PVA. The synthesized selenium nanoparticles have been characterized by UV-visible optical absorption spectroscopy, X-ray diffraction, energy dispersive X-ray analysis, differential scanning calorimetry, atomic force microscopy, scanning electron microscopy and transmission electron microscopy techniques.

  20. AC electrokinetic manipulation of selenium nanoparticles for potential nanosensor applications

    SciTech Connect (OSTI)

    Mahmoodi, Seyed Reza; Bayati, Marzieh; Hosseinirad, Somayeh; Foroumadi, Alireza; Gilani, Kambiz; Rezayat, Seyed Mahdi

    2013-03-15

    Highlights: ? Se nanoparticles were synthesized using a reverse-microemulsion process. ? AC osmotic fluid flow repulses the particles from electrode edges. ? Dielectrophoretic force attracts the particles to electrode edges. ? Dielectrophoresis electrode showed non-ohmic behavior. ? The device can potentially be used as a nanosensor. - Abstract: We report the AC electrokinetic behavior of selenium (Se) nanoparticles for electrical characterization and possible application as micro/nano devices. selenium Se nanoparticles were successfully synthesized using a reverse-microemulsion process and investigated structurally using X-ray diffraction and transmission electron microscope. Interdigitated castellated ITO and non-castellated platinum electrodes were employed for manipulation of suspended materials in the fluid. Using ITO electrodes at low frequency limits resulted in deposition of Se particles on electrode surface. When Se particles exposed to platinum electrodes in the 10 Hz–1 kHz range and V {sub p?p}> 8, AC osmotic fluid flow repulses the particles from electrode edges. However, in 10 kHz–10 MHz range and V {sub p?p}> 5, dielectrophoretic force attracts the particles to electrode edges. As the Se particle concentration increased, the trapped Se particles were aligned along the electric field line and bridged the electrode gap. The device was characterized and can potentially be useful in making micro/nano electronic devices.

  1. Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting

    E-Print Network [OSTI]

    Rogers, John A.

    -state lighting Hoon-sik Kima,1 , Eric Bruecknerb,1 , Jizhou Songc,1 , Yuhang Lid,e , Seok Kima , Chaofeng Lud with advanced, blue indium gallium nitride light emitting diodes (LEDs) lead to their potential as replacements this materials technology into light- ing modules that manage light conversion, extraction, and distri- bution

  2. Optical, electrical, and solar energy-conversion properties of gallium arsenide nanowire-array

    E-Print Network [OSTI]

    Zhou, Chongwu

    Optical, electrical, and solar energy-conversion properties of gallium arsenide nanowire, and will aid in the design and optimization of nanowire-based systems for solar energy-conversion applications, and the photoelectrochemical energy-conversion properties of GaAs nanowire arrays were evaluated in contact with one

  3. [Type here] Copper Indium Selenide (CIS) Solar Cell

    E-Print Network [OSTI]

    Hochberg, Michael

    [Type here] Copper Indium Selenide (CIS) Solar Cell CIS cells are made with a thin layer of CuInSe2) Solar Cell CIGs cells are made with a thin layer of copper indium gallium diselenide Cu(In, Ga)Se2 (CIGS). CIGS cells have up to 10% efficiency with similar durability as silicon solar cells. Since

  4. Selenium Biotransformations in an Engineered Aquatic Ecosystem for Bioremediation of Agricultural Wastewater via Brine Shrimp

    E-Print Network [OSTI]

    Selenium Biotransformations in an Engineered Aquatic Ecosystem for Bioremediation of Agricultural. Freeman*,,#, Department of Land, Air and Water Resources, University of California, Davis, California, Water Management Research Division, Parlier, California 93648, United States Biological Sciences

  5. Lag and ghosting in a clinical flat-panel selenium digital mammography system

    SciTech Connect (OSTI)

    Bloomquist, Aili K.; Yaffe, Martin J.; Mawdsley, Gordon E.; Hunter, David M.; Beideck, Daniel J. [Sunnybrook and Women's College Health Sciences Centre, Toronto, Ontario M4N 3M5 (Canada); Fletcher Allan Health Care, University of Vermont, Burlington, Vermont 05401 (United States)

    2006-08-15

    We present measurements of lag and ghosting in a FDA-approved digital mammography system that uses a dielectric/selenium based detector structure. Lag is the carryover of signal from a previous image, whereas ghosting is the reduction of sensitivity caused by previous exposure history of the detector. Data from six selenium units were acquired. For the type of selenium detector tested, and under typical clinical usage conditions, the lag was as high as 0.15% of source signal and the ghosting could be as high as 15%. The amount of lag and ghosting varied from unit to unit. Results were compared with data acquired on a phosphor-based full-field digital mammography system. Modifications in the technology of the selenium detectors appear to have resulted in a marked decrease in both lag and ghosting effects in more recent systems.

  6. Field-Measured Oxidation Rates of Biologically Reduced Selenium in Sludge

    E-Print Network [OSTI]

    Benson, Sally M.; Daggett, John; Zawislansi, Peter

    1999-01-01

    Reduced Selenium in Sludge Sally M. Benson, John Daggett andCalifornia 94720 U.S.A. Sludge generated during surface-Finding safe and economical sludge disposal methods requires

  7. Potential for selenium migration at a lignite power plant solid waste disposal facility 

    E-Print Network [OSTI]

    Hall, Steven Douglas

    1986-01-01

    . All groundwater that recharges on the disposal site is slightly saline and flows east, probably discharging into the Gibbons Creek Reservoir. Selenium, arsenic, boron, iron, manganese, and sulfate in the lignite waste effluent exceed either EPA... ( 1975) drinking water standards or EPA (1973) recommended livestock water standards. Since the natural groundwater contains higher concentrations of selenium, iron, manganese, and sulfate than the waste effluent, only arsenic and boron should...

  8. Modeling the behavior of selenium in Pulverized-Coal Combustion systems

    SciTech Connect (OSTI)

    Senior, Constance; Otten, Brydger Van; Wendt, Jost O.L.; Sarofim, Adel

    2010-11-15

    The behavior of Se during coal combustion is different from other trace metals because of the high degree of vaporization and high vapor pressures of the oxide (SeO{sub 2}) in coal flue gas. In a coal-fired boiler, these gaseous oxides are absorbed on the fly ash surface in the convective section by a chemical reaction. The composition of the fly ash (and of the parent coal) as well as the time-temperature history in the boiler therefore influences the formation of selenium compounds on the surface of the fly ash. A model was created for interactions between selenium and fly ash post-combustion. The reaction mechanism assumed that iron reacts with selenium at temperatures above 1200 C and that calcium reacts with selenium at temperatures less than 800 C. The model also included competing reactions of SO{sub 2} with calcium and iron in the ash. Predicted selenium distributions in fly ash (concentration versus particle size) were compared against measurements from pilot-scale experiments for combustion of six coals, four bituminous and two low-rank coals. The model predicted the selenium distribution in the fly ash from the pilot-scale experiments reasonably well for six coals of different compositions. (author)

  9. Ecosystem-scale Selenium Model for the San Francisco Bay-Delta Regional Ecosystem Restoration Implementation Plan

    E-Print Network [OSTI]

    Presser, Theresa S.; Luoma, Samuel N.

    2013-01-01

    RA, editors. Environmental chemistry of Selenium. New York (approach. Environmental Toxicology and Chemistry 25( 7):USA. Environmental Toxicology and Chemistry 23(12):3003–

  10. Plasma Vitamin D and Prostate Cancer Risk: Results from the Selenium and Vitamin E Cancer Prevention Trial

    E-Print Network [OSTI]

    2014-01-01

    Biomarkers & Prevention Plasma Vitamin D and Prostate Cancerfrom the Selenium and Vitamin E Cancer Prevention Trial Alanwho are using supplemental vitamin D should limit their dose

  11. Fast neutron scattering on Gallium target at 14.8 MeV

    E-Print Network [OSTI]

    R. Han; R. Wada; Z. Chen; Y. Nie; X. Liu; S. Zhang; P. Ren; B. Jia; G. Tian; F. Luo; W. Lin; J. Liu; F. Shi; M. Huang; X. Ruan; J. Ren; Z. Zhou; H. Huang; J. Bao; K. Zhang; B. Hu

    2014-11-03

    Benchmarking of evaluated nuclear data libraries was performed for $\\sim 14.8$ MeV neutrons on Gallium targets. The experiments were performed at China Institute of Atomic Energy(CIAE). Solid samples of natural Gallium (3.2 cm and 6.4 cm thick) were bombarded by $\\sim 14.8$ MeV neutrons and leakage neutron energy spectra were measured at 60$^{\\circ}$ and 120$^{\\circ}$. The measured spectra are rather well reproduced by MCNP-4C simulations with the CENDL-3.1, ENDF/B-VII and JENDL-4.0 evaluated nuclear data libraries, except for the inelastic contributions around $E_{n} = 10-13$ MeV. All three libraries significantly underestimate the inelastic contributions. The inelastic contributions are further studied, using the Talys simulation code and the experimental spectra are reproduced reasonably well in the whole energy range by the Talys calculation, including the inelastic contributions.

  12. Gallium suboxide vapor attack on chromium, cobalt, molybdenum, tungsten and their alloys at 1200 [degrees] C

    SciTech Connect (OSTI)

    Kolman, D. G. (David G.); Taylor, T. N. (Thomas N.); Park, Y. (Youngsoo); Stan, M. (Marius); Butt, D. P. (Darryl P.); Maggiore, C. J. (Carl J.); Tesmer, Joseph R.; Havrilla, G. J. (George J.)

    2004-01-01

    Our prior work elucidated the failure mechanism of furnace materi als (304 SS, 316 SS, and Hastelloy C-276) exposed to gallium suboxide (Ga{sub 2}O) and/or gallium oxide (Ga{sub 2}O{sub 3}) during plutonium - gallium compound processing. Failure was hypothesized to result from concurrent alloy oxidation/Ga compound reduction followed by Ga uptake. The aim of the current work is to screen candidate replacement materials. Alloys Haynes 25 (49 Co - 20 Cr - 15 W - 10 Ni - 3 Fe - 2 Mn - 0.4 Si, wt%), 52 Mo - 48 Re (wt%), 62 W - 38 Cu (wt%), and commercially pure Cr, Co, Mo, W, and alumina were examined. Preliminary assessments of commercially pure W and Mo - Re suggest that these materials may be suitable for furnace construction. Thermodynamics calculations indicating that materials containing Al, Cr, Mn, Si, and V would be susceptible to oxidation in the presence of Ga{sub 2}O were validated by experimental results. In contrast to that reported previously, an alternate reaction mechanism for Ga uptake, which does not require concurrent alloy oxidation, controls Ga uptake for certain materials. A correlation between Ga solubility and uptake was noted.

  13. Gallium hole traps in irradiated KTiOPO{sub 4}:Ga crystals

    SciTech Connect (OSTI)

    Grachev, V.; Meyer, M.; Malovichko, G.; Hunt, A. W.

    2014-12-07

    Nominally pure and gallium doped single crystals of potassium titanyl phosphate (KTiOPO{sub 4}) have been studied by Electron Paramagnetic Resonance at low temperatures before and after irradiation. Irradiation with 20?MeV electrons performed at room temperature and liquid nitrogen temperature caused an appearance of electrons and holes. Gallium impurities act as hole traps in KTiOPO{sub 4} creating Ga{sup 4+} centers. Two different Ga{sup 4+} centers were observed, Ga1 and Ga2. The Ga1 centers are dominant in Ga-doped samples. For the Ga1 center, a superhyperfine structure with one nucleus with nuclear spin ½ was registered and attributed to the interaction of gallium electrons with a phosphorus nucleus or proton in its surrounding. In both Ga1 and Ga2 centers, Ga{sup 4+} ions substitute for Ti{sup 4+} ions, but with a preference to one of two electrically distinct crystallographic positions (site selective substitution). The Ga doping eliminates one of the shortcomings of KTP crystals—ionic conductivity of bulk crystals. However, this does not improve significantly the resistance of the crystals to electron and ?-radiation.

  14. THE EFFECT OF ORGANIC SELENIUM SUPPLEMENTATION AND DIETARY ENERGY MANIPULATION ON MARES AND THEIR FOALS: SELENIUM CONCENTRATIONS, GLUTATHIONE PEROXIDASE ACTIVITY, FOALING PARAMETERS AND FOAL PHYSICAL CHARACTERISTICS 

    E-Print Network [OSTI]

    Karren, Brady

    2010-01-16

    Quarter Horse mares (n=28, 465-612 kg BW, 6-19 yrs of age) were used to investigate the effect of organic selenium (Se) supplementation (Selenosource, Diamond V Mills, Inc. Cedar Rapids, IA (SeM)) and DE manipulation on ...

  15. Potential Moderating Effects of Selenium on Mercury Uptake and Selenium:Mercury Molar Ratios in Fish From Oak Ridge and Savannah River Site - 12086

    SciTech Connect (OSTI)

    Burger, Joanna; Gochfeld, Michael; Donio, Mark; Jeitner, Christian; Pittfield, Taryn

    2012-07-01

    Mercury contamination is an important remediation issue at the U.S. Department of Energy's (DOE) Oak Ridge Reservation and to a lesser extent at other DOE sites because of the hazard it presents, potential consequences to humans and eco-receptors, and completed pathways, to offsite receptors. Recent work has emphasized that selenium might ameliorate the toxicity of mercury, and we examine the selenium:mercury (Se:Hg) molar ratios in fish from Oak Ridge, and compare them to Se:Hg molar ratios in fish from the Savannah River. Selenium/mercury molar ratios varied considerably among and within fish species. There was considerable variation in the molar ratios for individual fish (as opposed to mean ratios by species) for freshwater fish from both sites. The inter-individual variation in molar ratios indicates that such that the molar ratios of mean Se and Hg concentrations may not be representative. Even for fish species with relatively low mercury levels, some individual fish have molar ratios less than unity, the value sometime thought to be protective. Selenium levels varied narrowly regardless of fish size, consistent with homeostatic regulation of this essential trace element. The data indicate that considerable attention will need to be directed toward variations and variances, as well as the mechanisms of the interaction of selenium and mercury, before risk assessment and risk management policies can use this information to manage mercury pollution and risk. Even so, if there are high levels of selenium in the fish from Poplar Creek on Oak Ridge, then the potential exists for some amelioration of adverse health effects, on the fish themselves, predators that eat them, and people who consume them. This work will aid DOE because it will allow managers and scientists to understand another aspect that affects fate and transport of mercury, as well as the potential effects of methylmercury in fish for human and ecological receptors. The variability within fish species, however, suggests that the relative Se:Hg molar ratios in fish are not stable enough to be used in risk assessment at this time. Nor is it known how much excess selenium is required to confer any degree of protectiveness. That is, in conducting risk assessments, it is not possible to determine the spread of ratios, which would be needed for probabilistic risk assessment. Significantly more fish samples per species are required to begin to generate data that would allow it use in risk assessment. Adding Se:Hg molar ratios seems to complicate risk assessment for the potential adverse effects of mercury exposure, and using mercury levels at this time remains the most viable option. (authors)

  16. (Polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2001-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interefere in the ethylene polymerization process, while affecting the the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  17. Selenium Characterization in the Global Rice Supply Chain

    SciTech Connect (OSTI)

    Williams, Paul N.; Lombi, Enzo; Sun, Guo-Xin; Scheckel, Kirk; Zhu, Yong-Guan; Feng, Xinbin; Zhu, Jianming; Carey, Anne-Marie; Adomako, Eureka; Lawgali, Youseff; Deacon, Claire; Meharg, Andrew A.; (UCopenhagen); (Aberdeen); (Chinese Aca. Sci.); (US EPA)

    2009-08-13

    For up to 1 billion people worldwide, insufficient dietary intake of selenium (Se) is a serious health constraint. Cereals are the dominant Se source for those on low protein diets, as typified by the global malnourished population. With crop Se content constrained largely by underlying geology, regional soil Se variations are often mirrored by their locally grown staples. Despite this, the Se concentrations of much of the world's rice, the mainstay of so many, is poorly characterized, for both total Se content and Se speciation. In this study, 1092 samples of market sourced polished rice were obtained. The sampled rice encompassed dominant rice producing and exporting countries. Rice from the U.S. and India were found to be the most enriched, while mean average levels were lowest in Egyptian rice: {approx}32-fold less than their North American equivalents. By weighting country averages by contribution to either global production or export, modeled baseline values for both were produced. Based on a daily rice consumption of 300 g day{sup -1}, around 75% of the grains from the production and export pools would fail to provide 70% of daily recommended Se intakes. Furthermore, Se localization and speciation characterization using X-ray fluorescence ({mu}-XRF) and X-ray absorption near edge structure ({mu}-XANES) techniques were investigated in a Se-rich sample. The results revealed that the large majority of Se in the endosperm was present in organic forms.

  18. Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors

    SciTech Connect (OSTI)

    Yang, Jyun-Bao; Chen, Yu-Ting; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Huang, Jheng-Jie; Chen, Yu-Chun; Tseng, Hsueh-Chih [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Sze, Simon M. [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China)

    2014-04-14

    In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

  19. Modification of the crystal structure of gadolinium gallium garnet by helium ion irradiation

    SciTech Connect (OSTI)

    Ostafiychuk, B. K.; Yaremiy, I. P. Yaremiy, S. I.; Fedoriv, V. D.; Tomyn, U. O.; Umantsiv, M. M.; Fodchuk, I. M.; Kladko, V. P.

    2013-12-15

    The structure of gadolinium gallium garnet (GGG) single crystals before and after implantation by He{sup +} ions has been investigated using high-resolution X-ray diffraction methods and the generalized dynamic theory of X-ray scattering. The main types of growth defects in GGG single crystals and radiation-induced defects in the ion-implanted layer have been determined. It is established that the concentration of dislocation loops in the GGG surface layer modified by ion implantation increases and their radius decreases with an increase in the implantation dose.

  20. Application of the bounds-analysis approach to arsenic and gallium antisite

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield MunicipalTechnicalInformation4563AbuseConnectJournal Article:(Journalthedefects in gallium

  1. Selenium in Oklahoma ground water and soil. Quarterly report No. 6

    SciTech Connect (OSTI)

    Atalay, A.; Vir Maggon, D.

    1991-03-30

    Selenium with a consumption of 2 liters per day (5). The objectives of this study are: (1) to determine the concentrations of Se in Oklahoma ground water and soil samples. (2) to map the geographical distribution of Se species in Oklahoma. (3) to relate groundwater depth, pH and geology with concentration of Se.

  2. The distribution of selenium and other trace elements in Texas waters and soils 

    E-Print Network [OSTI]

    Jiang, Desheng

    1999-01-01

    The distribution of selenium in aquatic systems has not been widely investigated. For example, there is very little reliable Se data for Texas river waders. This thesis aims to draw a first order picture of the Se distribution in several Texas...

  3. Speciation and Attenuation of Arsenic and Selenium at Coal Combustion By-Product Management Facilities

    SciTech Connect (OSTI)

    K. Ladwig

    2005-12-31

    The overall objective of this project was to evaluate the impact of key constituents captured from power plant air streams (principally arsenic and selenium) on the disposal and utilization of coal combustion products (CCPs). Specific objectives of the project were: (1) to develop a comprehensive database of field leachate concentrations at a wide range of CCP management sites, including speciation of arsenic and selenium, and low-detection limit analyses for mercury; (2) to perform detailed evaluations of the release and attenuation of arsenic species at three CCP sites; and (3) to perform detailed evaluations of the release and attenuation of selenium species at three CCP sites. Each of these objectives was accomplished using a combination of field sampling and laboratory analysis and experimentation. All of the methods used and results obtained are contained in this report. For ease of use, the report is subdivided into three parts. Volume 1 contains methods and results for the field leachate characterization. Volume 2 contains methods and results for arsenic adsorption. Volume 3 contains methods and results for selenium adsorption.

  4. Bulk measurement of copper and sodium content in CuIn(0.7)Ga(0.3)Se(2) (CIGS) solar cells with nanosecond pulse length laser induced breakdown spectroscopy (LIBS)

    E-Print Network [OSTI]

    Kowalczyk, Jeremy M D; DeAngelis, Alexander; Kaneshiro, Jess; Mallory, Stewart A; Chang, Yuancheng; Gaillard, Nicolas

    2013-01-01

    In this work, we show that laser induced breakdown spectroscopy (LIBS) with a nanosecond pulse laser can be used to measure the copper and sodium content of CuIn(0.7)Ga(0.3)Se(2) (CIGS) thin film solar cells on molybdenum. This method has four significant advantages over methods currently being employed: the method is inexpensive, measurements can be taken in times on the order of one second, without high vacuum, and at distances up to 5 meters or more. The final two points allow for in-line monitoring of device fabrication in laboratory or industrial environments. Specifically, we report a linear relationship between the copper and sodium spectral lines from LIBS and the atomic fraction of copper and sodium measured via secondary ion mass spectroscopy (SIMS), discuss the ablation process of this material with a nanosecond pulse laser compared to shorter pulse duration lasers, and examine the depth resolution of nanosecond pulse LIBS.

  5. Dynamics of formation of photoresponse in a detector structure made of gallium arsenide

    SciTech Connect (OSTI)

    Ayzenshtat, G. I., E-mail: ayzen@mail.tomsknet.ru; Lelekov, M. A.; Tolbanov, O. P. [Tomsk State University (Russian Federation)

    2008-04-15

    The influence of capture effects on the characteristics of detectors of the ionizing radiation based on semi-insulating gallium arsenide is considered. Generation of nonequilibrium electrons and holes along the entire thickness of the active region was performed under illumination with an infrared light-emitting diode with a wavelength of 0.9 {mu}m. In this case, the situation emerging in the device structure under the effect of X-ray radiation or a high-energy electron beam was simulated. It is shown that the variation in the shape of the output signal with time in this case is caused by variation in the electric field profile due to the capture of holes at deep centers in gallium arsenide. An absolutely different distribution of the electric field emerges in the structure under irradiation of a semitransparent cathode of the structure with a red light-emitting diode, emission of which penetrates into the active region for mere 1 {mu}m. In this case, the transformation of the electric field is caused by the capture of electrons. Under the prolonged effect of such radiation, a space-charge-limited current mode emerges in the device.

  6. An assessment of the validity of cerium oxide as a surrogate for plutonium oxide gallium removal studies

    SciTech Connect (OSTI)

    Kolman, D.G.; Park, Y.; Stan, M.; Hanrahan, R.J. Jr.; Butt, D.P.

    1999-03-01

    Methods for purifying plutonium metal have long been established. These methods use acid solutions to dissolve and concentrate the metal. However, these methods can produce significant mixed waste, that is, waste containing both radioactive and chemical hazards. The volume of waste produced from the aqueous purification of thousands of weapons would be expensive to treat and dispose. Therefore, a dry method of purification is highly desirable. Recently, a dry gallium removal research program commenced. Based on initial calculations, it appeared that a particular form of gallium (gallium suboxide, Ga{sub 2}O) could be evaporated from plutonium oxide in the presence of a reducing agent, such as small amounts of hydrogen dry gas within an inert environment. Initial tests using ceria-based material (as a surrogate for PuO{sub 2}) showed that thermally-induced gallium removal (TIGR) from small samples (on the order of one gram) was indeed viable. Because of the expense and difficulty of optimizing TIGR from plutonium dioxide, TIGR optimization tests using ceria have continued. This document details the relationship between the ceria surrogate tests and those conducted using plutonia.

  7. Materials Science and Engineering B54 (1998) 207209 Growth of gallium phosphide layers by chemical beam epitaxy on

    E-Print Network [OSTI]

    Dietz, Nikolaus

    1998-01-01

    Materials Science and Engineering B54 (1998) 207­209 Letter Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates V. Narayanan a, *, N. Sukidi c , Chimin Hu b , N. Dietz c , K.J. Bachmann c , S. Mahajan a , S. Shingubara d a Department of Chemical, Bio

  8. Scanning Tunneling Microscopy and Surface Simulation of Zinc-Blende GaN(001) Intrinsic 4 Reconstruction: Linear Gallium Tetramers?

    E-Print Network [OSTI]

    Reconstruction: Linear Gallium Tetramers? Hamad A. AL-Brithen, Rong Yang, Muhammad B. Haider, Costel Constantin and occupied states, in agreement with surface simulations based on the 4 1 linear tetramer model the existence of linear Ga tetramers. DOI: PACS numbers: 68.35.Bs, 68.37.Ef, 73.20.At Based on both fundamental

  9. GALLIUM NITRIDE INTEGRATED GAS/TEMPERATURE SENSORS FOR FUEL CELL SYSTEM MONITORING FOR HYDROGEN AND CARBON MONOXIDE

    E-Print Network [OSTI]

    GALLIUM NITRIDE INTEGRATED GAS/TEMPERATURE SENSORS FOR FUEL CELL SYSTEM MONITORING FOR HYDROGEN on field effect devices using catalytic metal gates on silicon carbide substrates has been reviewed (Spetz) and prototype silicon carbide (SiC) FET based sensors show enhanced sensitivity at high temperature

  10. Delta II rocket launching the Mars Exploration Rover,

    E-Print Network [OSTI]

    Torgersen, Christian

    diodes (LEDs), laser diodes, photo detectors, and solar cells. These devices are important of efficient solar cells. Gallium is also used in some unusual applications. Thermal convection in liquidN (gallium nitride), and CIGS (copper-indium-gallium selenide) direct band-gap semiconductors. GaAs and Ga

  11. Selenium nutrition of Morone hybrids including dietary requirements, bioavailability, toxicity and effects on immune responses and disease resistance 

    E-Print Network [OSTI]

    Jaramillo, Francisco , Jr

    2006-08-16

    enhance immunocompetence and disease resistance of HSB. In the first experiment, purified and practical diets were supplemented with ?-glucan and selenium in a factorial arrangement and fed to juvenile HSB for 6 wk followed by a S. iniae challenge...

  12. From Soil Aggregate to Watershed, from California's Central Valley to the Salton Sea - Agricultural Selenium Contamination across Ecosystems, Scales, and Disciplines

    E-Print Network [OSTI]

    Kausch, Matteo Francesco

    2013-01-01

    2003. Distribution of chromium contamination and microbialassessment of worldwide contamination of air, water andKrynitsky. 1987. Selenium contamination of the grasslands, a

  13. Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen

    SciTech Connect (OSTI)

    Sallis, S.; Williams, D. S.; Butler, K. T.; Walsh, A.; Quackenbush, N. F.; Junda, M.; Podraza, N. J.; Fischer, D. A.; Woicik, J. C.; White, B. E.; Piper, L. F. J.

    2014-06-09

    The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.

  14. Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module

    SciTech Connect (OSTI)

    Silverman, T. J.; Deceglie, M. G.; Marion, B.; Cowley, S.; Kayes, B.; Kurtz, S.

    2013-06-01

    We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.

  15. Optoelectronic and low temperature thermoelectric studies on nanostructured thin films of silver gallium selenide

    SciTech Connect (OSTI)

    Jacob, Rajani, E-mail: reenatara@rediffmail.com; Philip, Rachel Reena, E-mail: reenatara@rediffmail.com; Nazer, Sheeba, E-mail: reenatara@rediffmail.com; Abraham, Anitha, E-mail: reenatara@rediffmail.com; Nair, Sinitha B., E-mail: reenatara@rediffmail.com [Thin film research lab, U.C. College, Aluva, Kerala (India); Pradeep, B.; Urmila, K. S. [Solid State Physics Laboratory, Cochin University of Science and Technology, Cochin (India); Okram, G. S. [UGC-DAE CSR, Khandwa Road, Indore-452 001, Madhya Pradesh (India)

    2014-01-28

    Polycrystalline thin films of silver gallium selenide were deposited on ultrasonically cleaned soda lime glass substrates by multi-source vacuum co-evaporation technique. The structural analysis done by X-ray diffraction ascertained the formation of nano structured tetragonal chalcopyrite thin films. The compound formation was confirmed by X-ray photo-electron spectroscopy. Atomic force microscopic technique has been used for surface morphological analysis. Direct allowed band gap ?1.78eV with high absorption coefficient ?10{sup 6}/m was estimated from absorbance spectra. Low temperature thermoelectric effects has been investigated in the temperature range 80–330K which manifested an unusual increase in Seebeck coefficient with negligible phonon drag toward the very low and room temperature regime. The electrical resistivity of these n-type films was assessed to be ?2.6?m and the films showed good photo response.

  16. Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters

    SciTech Connect (OSTI)

    Muhammad, R.; Ahamad, R.; Ibrahim, Z.; Othaman, Z.

    2014-03-05

    Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the effects of V/III ratio on structural properties and current-voltage changes in the wires. Results show that GaAs NWs grow preferably in the wurtzite crystal structure than zinc blende crystal structure with increasing V/III ratio. Additionally, CAFM studies have revealed that zincblende nanowires indicate ohmic characteristic compared to oscillation current occurred for wurtzite structures. The GaAs NWs with high quality structures are needed in solar cells technology for trapping energy that directly converts of sunlight into electricity with maximum capacity.

  17. Selenium And Arsenic Speciation in Fly Ash From Full-Scale Coal-Burning Utility Plants

    SciTech Connect (OSTI)

    Huggins, F.E.; Senior, C.L.; Chu, P.; Ladwig, K.; Huffman, G.P.; /Kentucky U. /Reaction Engin. Int. /Elect. Power Res. Inst., Palo Alto

    2007-07-09

    X-ray absorption fine structure spectroscopy has been used to determine directly the oxidation states and speciation of selenium and arsenic in 10 fly ash samples collected from full-scale utility plants. Such information is needed to assess the health risk posed by these elements in fly ash and to understand their behavior during combustion and in fly ash disposal options, such as sequestration in tailings ponds. Selenium is found predominantly as Se(IV) in selenite (SeO{sub 3}{sup 2-}) species, whereas arsenic is found predominantly as As(V) in arsenate (AsO{sub 4}{sup 3-}) species. Two distinct types of selenite and arsenate spectra were observed depending upon whether the fly ash was derived from eastern U.S. bituminous (Fe-rich) coals or from western subbituminous or lignite (Ca-rich) coals. Similar spectral details were observed for both arsenic and selenium in the two different types of fly ash, suggesting that the post-combustion behavior and capture of both of these elements are likely controlled by the same dominant element or phase in each type of fly ash.

  18. Journal of Crystal Growth 310 (2008) 29872994 Reaction kinetics of CuGaSe2 formation from

    E-Print Network [OSTI]

    Anderson, Timothy J.

    2008-01-01

    of polycrystalline thin-film Cu(InxGa1Àx)Se2 (CIGS) solar cells achieved over the past several decades appears. Copper gallium diselenide; B3. Solar cells 1. Introduction The continuous improvement in the efficiency for the top cell in a CIGS tandem structure [2­4], given its suitable band gap energy (1.68 eV), process

  19. 2006 Minerals Yearbook U.S. Department of the Interior

    E-Print Network [OSTI]

    ) solar cells that would yield high production throughput. Flexible CIGS solar cells could All refined computers (15%), and cell phones (11%). The LCD market was expected to show considerable growth within to develop a low-cost manufacturing process for flexible thin film copper indium gallium diselenide (CIGS

  20. Structural and electronic properties of -In2X3 (X=O, S, Se, Te) using ab initio calculations

    E-Print Network [OSTI]

    Khare, Sanjay V.

    by NREL [1]. CdS is one of the important layers in fabricating CIGS solar cells but poses ecological and environmentally friendly copper­indium­gallium­selenide solar cells and molecules. Here we have studied been investigated. © 2011 Elsevier B.V. All rights reserved. Introduction Cu­In­Ga­S (CIGS) based solar

  1. Some effects of selenium on the growth and survival of larval stages of the american oyster, Crassostrea virginica 

    E-Print Network [OSTI]

    Smith, Wendy S

    1979-01-01

    SOME EFFECTS OF SELENIUM ON THE GROWTH AND SURVIVAL OF LARVAL STAGES OF THE AMERICAN OYSTER CRASSOSTREA VIRGINICA A Thesis by WENDY S. SMITH Submitted to the Graduate College of Texas ASM Univeristy in partial fulfillment of the requirement... for the degree of MASTER OF SCIENCE May 1979 Major Subject: Biology SOME EFFECTS OF SELENIUM ON Tl-IE GROLJTH AND SURVIVAL OF LARVAL STAGES OF THE ANJERICAN OYSTER CRASSOSTREA VIRGINICA A Thesis by NENDY S. SMITH Approved as to style and content by...

  2. Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide A. J. Kerr, E. Chagarov, S. Gu, T. Kaufman-Osborn, S. Madisetti, J. Wu, P. M. Asbeck, S. Oktyabrsky, and A. C.

    E-Print Network [OSTI]

    Kummel, Andrew C.

    Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide A. J. Kerr, E of plasma enhanced atomic layer deposited dielectrics on Ga- and N- face gallium nitride J. Appl. Phys. 116, 123702 (2014); 10.1063/1.4895985 Atomic layer deposited passivation layers for superlattice

  3. Gallium ion implantation greatly reduces thermal conductivity and enhances electronic one of ZnO nanowires

    SciTech Connect (OSTI)

    Xia, Minggang, E-mail: xiamg@mail.xjtu.edu.cn [Laboratory of Nanostructure and its Physics Properties, Department of Optical Information Science and Technology, Department of Applied Physics, and MOE Key Laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter, School of Science, Xi'an Jiaotong University, 710049 China (China); Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117542 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Cheng, Zhaofang; Han, Jinyun; Zhang, Shengli [Laboratory of Nanostructure and its Physics Properties, Department of Optical Information Science and Technology, Department of Applied Physics, and MOE Key Laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter, School of Science, Xi'an Jiaotong University, 710049 China (China); Zheng, Minrui [Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117542 (Singapore); Sow, Chorng-Haur [Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117542 (Singapore); National University of Singapore Nanoscience and Nanotechnology Initiative, National University of Singapore, Singapore 117542 (Singapore); Thong, John T. L. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Li, Baowen [Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117542 (Singapore); National University of Singapore Nanoscience and Nanotechnology Initiative, National University of Singapore, Singapore 117542 (Singapore); Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

    2014-05-15

    The electrical and thermal conductivities are measured for individual zinc oxide (ZnO) nanowires with and without gallium ion (Ga{sup +}) implantation at room temperature. Our results show that Ga{sup +} implantation enhances electrical conductivity by one order of magnitude from 1.01 × 10{sup 3} ?{sup ?1}m{sup ?1} to 1.46 × 10{sup 4} ?{sup ?1}m{sup ?1} and reduces its thermal conductivity by one order of magnitude from 12.7 Wm{sup ?1}K{sup ?1} to 1.22 Wm{sup ?1}K{sup ?1} for ZnO nanowires of 100 nm in diameter. The measured thermal conductivities are in good agreement with those in theoretical simulation. The increase of electrical conductivity origins in electron donor doping by Ga{sup +} implantation and the decrease of thermal conductivity is due to the longitudinal and transverse acoustic phonons scattering by Ga{sup +} point scattering. For pristine ZnO nanowires, the thermal conductivity decreases only two times when its diameter reduces from 100 nm to 46 nm. Therefore, Ga{sup +}-implantation may be a more effective method than diameter reduction in improving thermoelectric performance.

  4. Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

    SciTech Connect (OSTI)

    Wampler, William R.; Myers, Samuel M.

    2014-02-01

    A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defects within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.

  5. Gallium Solar Neutrino Experiments: Absorption Cross sections, Neutrino spectra, and Predicted Event Rates

    E-Print Network [OSTI]

    John N. Bahcall

    1997-10-28

    Neutrino absorption cross sections for 71Ga are calculated for all solar neutrino sources with standard energy spectra, and for laboratory sources of 51Cr and 37Ar; the calculations include, where appropriate, the thermal energy of fusing solar ions and use improved nuclear and atomic data. The ratio, R, of measured (in GALLEX and SAGE) to calculated 51Cr capture rate is R = 0.95 +/- 0.07 (exp)} + ^{+0.04}_{-0.03} (theory). Cross sections are also calculated for specific neutrino energies chosen so that a spline fit determines accurately the event rates in a gallium detector even if new physics changes the energy spectrum of solar neutrinos. Theoretical uncertainties are estimated for cross sections at specific energies and for standard neutrino energy spectra. Standard energy spectra are presented for pp and CNO neutrino sources in the appendices. Neutrino fluxes predicted by standard solar models, corrected for diffusion, have been in the range 120 SNU to 141 SNU since 1968.

  6. Revealing the Preferred Interlayer Orientations and Stackings of Two-Dimensional Bilayer Gallium Selenide Crystals

    SciTech Connect (OSTI)

    Li, Xufan; Basile Carrasco, Leonardo A; Yoon, Mina; Ma, Cheng; Puretzky, Alexander A; Lee, Jaekwang; Idrobo Tapia, Juan Carlos; Chi, Miaofang; Rouleau, Christopher M; Geohegan, David B; Xiao, Kai

    2015-01-01

    Characterizing and controlling the interlayer orientations and stacking order of bilayer two-dimensional (2D) crystals and van der Waals (vdW) heterostructure is crucial to optimize their electrical and optoelectronic properties. The four polymorphs of layered gallium selenide (GaSe) that result from different layer stacking provide an ideal platform to study the stacking configurations in bilayer 2D crystals. Here, through a controllable vapor-phase deposition method we selectively grow bilayer GaSe crystals and investigate their two preferred 0 or 60 interlayer rotations. The commensurate stacking configurations (AA and AB-stacking) in as-grown 2D bilayer GaSe crystals are clearly observed at the atomic scale and the Ga-terminated edge structure are identified for the first time by using atomic-resolution scanning transmission electron microscopy (STEM). Theoretical analysis of the interlayer coupling energetics vs. interlayer rotation angle reveals that the experimentally-observed orientations are energetically preferred among the bilayer GaSe crystal polytypes. The combined experimental and theoretical characterization of the GaSe bilayers afforded by these growth studies provide a pathway to reveal the atomistic relationships in interlayer orientations responsible for the electronic and optical properties of bilayer 2D crystals and vdW heterostructures.

  7. Groundwater Quality and Groundwater Pollution

    E-Print Network [OSTI]

    Pasternack, Gregory B.

    bromide gallium magnesium strontium cadmium gold chromium indium cobalt lanthanum anions phosphate tin rubidium tungsten selenium ytterbium titanium yttrium uranium zirconium vanadium zinc #12;are

  8. Steady State Sputtering Yields and Surface Compositions of Depleted Uranium and Uranium Carbide bombarded by 30 keV Gallium or 16 keV Cesium Ions.

    SciTech Connect (OSTI)

    Siekhaus, W. J.; Teslich, N. E.; Weber, P. K.

    2014-10-23

    Depleted uranium that included carbide inclusions was sputtered with 30-keV gallium ions or 16-kev cesium ions to depths much greater than the ions’ range, i.e. using steady-state sputtering. The recession of both the uranium’s and uranium carbide’s surfaces and the ion corresponding fluences were used to determine the steady-state target sputtering yields of both uranium and uranium carbide, i.e. 6.3 atoms of uranium and 2.4 units of uranium carbide eroded per gallium ion, and 9.9 uranium atoms and 3.65 units of uranium carbide eroded by cesium ions. The steady state surface composition resulting from the simultaneous gallium or cesium implantation and sputter-erosion of uranium and uranium carbide were calculated to be U??Ga??, (UC)??Ga?? and U??Cs?, (UC)??Cs??, respectively.

  9. Selenium Bioaccumulation in Stocked Fish as an Indicator of Fishery Potential in Pit Lakes on Reclaimed Coal Mines

    E-Print Network [OSTI]

    Hontela, Alice

    on Reclaimed Coal Mines in Alberta, Canada L. L. Miller · J. B. Rasmussen · V. P. Palace · G. Sterling · A to selenium (Se) and other metals and metalloids in pit lakes formed by open pit coal mining in Tertiary (thermal coal) and in Cretaceous (metallurgical coal) bedrock. Juvenile hatchery rainbow trout

  10. Gallium and indium imaging agents. 2. Complexes of sulfonated catecholyamide sequestering agents

    SciTech Connect (OSTI)

    Pecoraro, V.L.; Wong, G.B.; Raymond, K.N.

    1982-06-01

    The solution equilibria for the reaction of Ga(III) and In(III) with the hexadentate ligands N, N', N''-tris(2,3-dihydroxy-5-sulfonatobenzoyl)-1,3,5-tris(aminomethyl)benzene (MECAMS) and N, N', N''-tris(2,3-dihydroxy-5-sulfonatobenzoyl)-1,5,10-triazadecane (3,4-LICAMS) and the bidentate catechol N,N-dimethyl-2,3-dihydroxy-5-sulfonatobenzamide (DMBS) have been determined on 0.1 M KNO/sub 3/ at 25/sup 0/C. Both Ga(III) and In(III) are coordinated by three catecholate groups at high pH and have formation constants of the order ..beta../sub 110/ = 10/sup 38/ M/sup -1/. As the acidity of the medium is increased, the metal complexes of the hexadentate sequestering agents undergo protonation reactions. For the determination of the nature of the protonated metal chelates, the stretching frequency of the amide carbonyl has been monitored in D/sub 2/O by Fourier transform infrared spectroscopy (FT IR). These data support a series of two one-proton steps to form a mixed salicylate-catecholate coordination about the metal ion. In the salicylate bonding mode the metal is bound through the ortho phenolic oxygen and the amide cabonyl whereas catecholate coordination is via the adjacent phenols. In contrast, protonation of the M/sup III/(DMBS)/sub 3/ complexes results in dissociation of a catechol moiety to form M/sup III/(DMBS)/sub 2/. The potential use of these compounds as tumor-imaging agents in cancer diagnosis is discussed, with specific attention to the role of the gallium transferrin complex.

  11. Dietary vitamin E requirement of sunshine bass (Morone chrysops [] x M. saxatilis []) and apparent lack of interactions between vitamin E and selenium 

    E-Print Network [OSTI]

    Kocabas, Arif Murat

    1996-01-01

    A 12-week feeding trial was conducted to determine the dietary vitamin E requirement of juvenile sunshine bass (Morone chrysops @ x M saxatilis d), and to investigate the possible interactions between dietary vitamin E and selenium. Sunshine bass...

  12. Selenium fractionation and cycling in the intertidal zone of the Carquinez Strait. Annual report, October 1, 1995--December 31,1996

    SciTech Connect (OSTI)

    Zawislanski, P.T.; McGrath, A.E.; Benson, S.M.

    1997-10-01

    Selenium geochemistry in tidal wetlands is a topic of continuing study at Lawrence Berkeley National Laboratory. The program of studies described in this report was initiated in the fall of 1994 in response to concerns about elevated Se concentrations in waters, sediments, and biota in the Carquinez Strait. Processes by which selenium is introduced and potentially released from the sediment system have been the focus of research in 1996.

  13. Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

    DOE Patents [OSTI]

    Curtis, Calvin J. (Lakewood, CO); Miedaner, Alexander (Boulder, CO); Van Hest, Maikel (Lakewood, CO); Ginley, David S. (Evergreen, CO); Nekuda, Jennifer A. (Lakewood, CO)

    2011-11-15

    Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

  14. X-ray study of the oxidation of liquid-gallium surfaces M. J. Regan,* H. Tostmann, and P. S. Pershan

    E-Print Network [OSTI]

    Pershan, Peter S.

    waves with temperatures up to only 443 K. This is a good indication that the oxide layer provides for the atomic arrangements in the gallium oxide layer and its interface with the underlying liquid. S0163 resistance arises from the natural formation of an inert oxide layer on its free surface.2 The study

  15. Atomic layer structure of manganese atoms on wurtzite gallium nitride Abhijit Chinchore, Kangkang Wang, Wenzhi Lin, Jeongihm Pak, and Arthur R. Smitha

    E-Print Network [OSTI]

    This surface forms the starting point for Mn deposition. The Mn atomic layer was prepared by depositing MnAtomic layer structure of manganese atoms on wurtzite gallium nitride ,,0001¯... Abhijit Chinchore stage of growth. Certainly, a thin well-ordered layer of Mn atoms on GaN could be of great interest

  16. Elastic properties of sulphur and selenium doped ternary PbTe alloys by first principles

    SciTech Connect (OSTI)

    Bali, Ashoka, E-mail: rcmallik@physics.iisc.ernet.in; Chetty, Raju, E-mail: rcmallik@physics.iisc.ernet.in; Mallik, Ramesh Chandra, E-mail: rcmallik@physics.iisc.ernet.in [Thermoelectric Materials and Devices Laboratory, Department of Physics, Indian Institute of Science, Bangalore-560012 (India)

    2014-04-24

    Lead telluride (PbTe) is an established thermoelectric material which can be alloyed with sulphur and selenium to further enhance the thermoelectric properties. Here, a first principles study of ternary alloys PbS{sub x}Te{sub (1?x)} and PbSe{sub x}Te{sub (1?x)} (0?x?1) based on the Virtual Crystal Approximation (VCA) is presented for different ratios of the isoelectronic atoms in each series. Equilibrium lattice parameters and elastic constants have been calculated and compared with the reported data. Anisotropy parameter calculated from the stiffness constants showed a slight improvement in anisotropy of elastic properties of the alloys over undoped PbTe. Furthermore, the alloys satisfied the predicted stability criteria from the elastic constants, showing stable structures, which agreed with the previously reported experimental results.

  17. Speciation of Selenium, Arsenic, and Zinc in Class C Fly Ash

    SciTech Connect (OSTI)

    Luo, Yun; Giammar, Daniel E.; Huhmann, Brittany L.; Catalano, Jeffrey G.

    2011-11-17

    A major environmental concern associated with coal fly ash is the mobilization of trace elements that may contaminate water. To better evaluate proper use of fly ash, determine appropriate disposal methods, and monitor postdisposal conditions, it is important to understand the speciation of trace elements in fly ash and their possible environmental impact. The speciation of selenium, arsenic, and zinc was determined in five representative Class C fly ash samples from combustion of sub-bituminous Powder River Basin coal using synchrotron-based X-ray absorption spectroscopy to provide an improved understanding of the mechanisms of trace element association with the fly ash. Selenium in all fly ash samples occurs predominantly as Se(IV), with the exception of one sample, in which there was a minor amount of Se(0). Se(0) is likely associated with the high content of unburned coal in the sample. Arsenic exists in the fly ash as a single phase most consistent with calcium pyroarsenate. In contrast, zinc occurs as two distinct species in the silicate glass matrix of the fly ash. This work demonstrates that residual carbon in fly ash may reduce potential Se mobility in the environment by retaining it as less soluble elemental Se instead of Se(IV). Further, this work suggests that As and Zn in Class C fly ash will display substantially different release and mobilization behaviors in aquatic environments. While As release will primarily depend upon the dissolution and hydrolysis of calcium pyroarsenate, Zn release will be controlled by the dissolution of alkaline aluminosilicate glass in the ash.

  18. Selenium Accumulation, Distribution, and Speciation in Spineless Prickly Pear Cactus: A Drought- and Salt-Tolerant, Selenium-Enriched Nutraceutical Fruit Crop for Biofortified Foods

    SciTech Connect (OSTI)

    Banuelos, Gary S.; Fakra, Sirine C.; Walse, Spencer S.; Marcus, Matthew A.; Yang, Soo In; Pickering, Ingrid J.; Pilon-Smits, Elizabeth A.H.; Freeman, John L.

    2011-07-01

    The organ-specific accumulation, spatial distribution, and chemical speciation of selenium (Se) were previously unknown for any species of cactus. We investigated Se in Opuntia ficus-indica using inductively coupled plasma mass spectrometry, microfocused x-ray fluorescence elemental and chemical mapping ({micro}XRF), Se K-edge x-ray absorption near-edge structure (XANES) spectroscopy, and liquid chromatography-mass spectrometry (LC-MS). {micro}XRF showed Se concentrated inside small conic, vestigial leaves (cladode tips), the cladode vasculature, and the seed embryos. Se K-edge XANES demonstrated that approximately 96% of total Se in cladode, fruit juice, fruit pulp, and seed is carbon-Se-carbon (C-Se-C). Micro and bulk XANES analysis showed that cladode tips contained both selenate and C-Se-C forms. Inductively coupled plasma mass spectrometry quantification of Se in high-performance liquid chromatography fractions followed by LC-MS structural identification showed selenocystathionine-to-selenomethionine (SeMet) ratios of 75:25, 71:29, and 32:68, respectively in cladode, fruit, and seed. Enzymatic digestions and subsequent analysis confirmed that Se was mainly present in a 'free' nonproteinaceous form inside cladode and fruit, while in the seed, Se was incorporated into proteins associated with lipids. {micro}XRF chemical mapping illuminated the specific location of Se reduction and assimilation from selenate accumulated in the cladode tips into the two LC-MS-identified C-Se-C forms before they were transported into the cladode mesophyll. We conclude that Opuntia is a secondary Se-accumulating plant whose fruit and cladode contain mostly free selenocystathionine and SeMet, while seeds contain mainly SeMet in protein. When eaten, the organic Se forms in Opuntia fruit, cladode, and seed may improve health, increase Se mineral nutrition, and help prevent multiple human cancers.

  19. JV Task 124 - Understanding Multi-Interactions of SO3, Mercury, Selenium, and Arsenic in Illinois Coal Flue Gas

    SciTech Connect (OSTI)

    Ye Zhuang; Christopher Martin; John Pavlish

    2009-03-31

    This project consisted of pilot-scale combustion testing with a representative Illinois basin coal to explore the multi-interactions of SO{sub 3}, mercury, selenium and arsenic. The parameters investigated for SO{sub 3} and mercury interactions included different flue gas conditions, i.e., temperature, moisture content, and particulate alkali content, both with and without activated carbon injection for mercury control. Measurements were also made to track the transformation of selenium and arsenic partitioning as a function of flue gas temperature through the system. The results from the mercury-SO{sub 3} testing support the concept that SO{sub 3} vapor is the predominant factor that impedes efficient mercury removal with activated carbon in an Illinois coal flue gas, while H{sub 2}SO{sub 4} aerosol has less impact on activated carbon injection performance. Injection of a suitably mobile and reactive additives such as sodium- or calcium-based sorbents was the most effective strategy tested to mitigate the effect of SO{sub 3}. Transformation measurements indicate a significant fraction of selenium was associated with the vapor phase at the electrostatic precipitator inlet temperature. Arsenic was primarily particulate-bound and should be captured effectively with existing particulate control technology.

  20. An experiment to test the viability of a gallium-arsenide cathode in a SRF electron gun

    SciTech Connect (OSTI)

    Kewisch,J.; Ben-Zvi, I.; Rao, T.; Burrill, A.; Pate, D.; Wu, Q.; Todd, R.; Wang, E.; Bluem, H.; Holmes, D.; Schultheiss, T.

    2009-05-04

    Strained gallium arsenide cathodes are used in electron guns for the production of polarized electrons. In order to have a sufficient quantum efficiency lifetime of the cathode the vacuum in the gun must be 10{sup -11} Torr or better, so that the cathode is not destroyed by ion back bombardment or through contamination with residual gases. All successful polarized guns are DC guns, because such vacuum levels can not be obtained in normal conducting RF guns. A superconductive RF gun may provide a sufficient vacuum level due to cryo-pumping of the cavity walls. We report on the progress of our experiment to test such a gun with normal GaAs-Cs crystals.

  1. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect (OSTI)

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  2. Leaching characteristics of arsenic and selenium from coal fly ash: role of calcium

    SciTech Connect (OSTI)

    Tian Wang; Jianmin Wang; Yulin Tang; Honglan Shi; Ken Ladwig

    2009-05-15

    Understanding the leaching behavior of arsenic (As) and selenium (Se) in coal fly ash is important in evaluating the potential environmental impact of coal fly ash. Batch experiments were employed to systematically investigate the leaching behavior of As and Se in two major types of coal fly ashes, bituminous coal ash and sub-bituminous coal ash, and to determine the underlying processes that control As and Se leaching. The effects of pH, solid/liquid (S/L) ratio, calcium addition, and leaching time on the release of As and Se were studied. Overall, bituminous coal ash leached significantly more As and Se than sub-bituminous coal ash, and Se was more readily leachable, in both absolute concentration and relative fraction, than As for both types of fly ashes. Adsorption/desorption played a major role on As and Se leaching from bituminous coal ashes. However, calcium precipitation played the most important role in reducing As and Se leaching from sub-bituminous coal ashes in the entire experimental pH range. The leaching of As and Se from bituminous coal ashes generally increased with increases in the S/L ratio and leaching time. However, for sub-bituminous coal ashes, the leaching of As was not detected under most experimental conditions, while the leaching of Se increased with increases in the S/L ratio and leaching time. As{sup V} and Se{sup IV} were found to be the major species in all ash leachates in this study. 46 refs., 7 figs., 1 tab.

  3. Protection of cisplatin-induced spermatotoxicity, DNA damage and chromatin abnormality by selenium nano-particles

    SciTech Connect (OSTI)

    Rezvanfar, Mohammad Amin; Rezvanfar, Mohammad Ali; Shahverdi, Ahmad Reza; Ahmadi, Abbas; Baeeri, Maryam; Mohammadirad, Azadeh; Abdollahi, Mohammad

    2013-02-01

    Cisplatin (CIS), an anticancer alkylating agent, induces DNA adducts and effectively cross links the DNA strands and so affects spermatozoa as a male reproductive toxicant. The present study investigated the cellular/biochemical mechanisms underlying possible protective effect of selenium nano-particles (Nano-Se) as an established strong antioxidant with more bioavailability and less toxicity, on reproductive toxicity of CIS by assessment of sperm characteristics, sperm DNA integrity, chromatin quality and spermatogenic disorders. To determine the role of oxidative stress (OS) in the pathogenesis of CIS gonadotoxicity, the level of lipid peroxidation (LPO), antioxidant enzymes including superoxide dismutase (SOD), catalase (CAT) and glutathione peroxidase (GSH-Px) and peroxynitrite (ONOO) as a marker of nitrosative stress (NS) and testosterone (T) concentration as a biomarker of testicular function were measured in the blood and testes. Thirty-two male Wistar rats were equally divided into four groups. A single IP dose of CIS (7 mg/kg) and protective dose of Nano-Se (2 mg/kg/day) were administered alone or in combination. The CIS-exposed rats showed a significant increase in testicular and serum LPO and ONOO level, along with a significant decrease in enzymatic antioxidants levels, diminished serum T concentration and abnormal histologic findings with impaired sperm quality associated with increased DNA damage and decreased chromatin quality. Coadministration of Nano-Se significantly improved the serum T, sperm quality, and spermatogenesis and reduced CIS-induced free radical toxic stress and spermatic DNA damage. In conclusion, the current study demonstrated that Nano-Se may be useful to prevent CIS-induced gonadotoxicity through its antioxidant potential. Highlights: ? Cisplatin (CIS) affects spermatozoa as a male reproductive toxicant. ? Effect of Nano-Se on CIS-induced spermatotoxicity was investigated. ? CIS-exposure induces oxidative sperm DNA damage and impairs steroidogenesis. ? Nano-Se retained sperm quality against CIS-induced free radicals toxic stress.

  4. Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom

    DOE Patents [OSTI]

    Curtis, Calvin J. (Lakewood, CO); Miedaner, Alexander (Boulder, CO); van Hest, Marinus Franciscus Antonius Maria (Lakewood, CO); Ginley, David S. (Evergreen, CO); Leisch, Jennifer (Denver, CO); Taylor, Matthew (West Simsbury, CT); Stanbery, Billy J. (Austin, TX)

    2011-09-20

    Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.

  5. JOUKNAI, OF GEOPHYSICAL RESEARCH, VOL. 98. NO. D7. PAGES 12.673-12.685, JULY 20. 1993 Aerosol Selenium at Bermuda and Barbados

    E-Print Network [OSTI]

    Prospero, Joseph M.

    Selenium at Bermuda and Barbados W. G.ELLIS,JR.',~, R. ARIMOTO', D.L.SAVOIE~,J. T.MERRILL~,R. A. D U C E ~ ,AND J. M. PROSPBRO~ Daily aerosol samples collected at Bermuda and Barbados as part of the Atmospherc source. Our results indicatedthat a marine biogenicsource of Se accounted for 60-80%of the Se at Barbados

  6. The CIG 2007The CIG 2007 Car Racing CompetitionCar Racing Competition

    E-Print Network [OSTI]

    Togelius, Julian

    controller creation methods (evo creation methods (evo + RL + others+ RL + others)) Depth, yet smooth

  7. Measurement of the Solar Neutrino Capture Rate by the Russian-American Gallium Solar Neutrino Experiment During One Half of the 22-Year Cycle of Solar Activity

    E-Print Network [OSTI]

    SAGE Collaboration; J. N. Abdurashitov

    2002-07-09

    We present the results of measurements of the solar neutrino capture rate in gallium metal by the Russian-American Gallium Experiment SAGE during slightly more than half of a 22-year cycle of solar activity. Combined analysis of the data of 92 runs during the 12-year period January 1990 through December 2001 gives a capture rate of solar neutrinos with energy more than 233 keV of 70.8 +5.3/-5.2 (stat.) +3.7/-3.2 (syst.) SNU. This represents only slightly more than half of the predicted standard solar model rate of 128 SNU. We give the results of new runs beginning in April 1998 and the results of combined analysis of all runs since 1990 during yearly, monthly, and bimonthly periods. Using a simple analysis of the SAGE results combined with those from all other solar neutrino experiments, we estimate the electron neutrino pp flux that reaches the Earth to be (4.6 +/- 1.1) E10/(cm^2-s). Assuming that neutrinos oscillate to active flavors the pp neutrino flux emitted in the solar fusion reaction is approximately (7.7 +/- 1.8) E10/(cm^2-s), in agreement with the standard solar model calculation of (5.95 +/- 0.06) E10/(cm^2-s).

  8. An Alternative Interpretation of Plasma Selenium Data from Endangered Patagonian Huemul Deer ( Hippocamelus bisulcus )

    SciTech Connect (OSTI)

    Flueck, Werner T.; Smith-Flueck, Jo Anne M.; Mincher, Bruce J.; Winkel, Lenny H. H.E.

    2014-10-01

    The prevalence of osteopathology in 57% in the endangered adult Patagonian huemul deer (Hippocamelus bisulcus), malformed antler development, and general lack of recovery were previously suggested to possibly be related to mineral imbalances like selenium (Se) deficiency, and not to stem from fluorosis. From recent bone analyses of these diseased huemul, fluoride levels averaged 58 ppm (SE=10.7), thus eliminating fluorosis as a causal factor for the osteopathology reported in huemul. In contrast, when analyzing high-elevation sites commonly used by extant populations, we found soils deficient in Se. Ashes from recent volcanism also were very low in Se. As Se-responsive diseases in livestock have been documented in Chile, we reclassified recently published Se levels in huemul and determined that 73% were deficient and 18% marginal. Together with these several lines of indirect evidence, we conclude that Se deficiency plays a role in the lack of recovery of huemul populations.

  9. Experimental Substantiation of the Possibility of Developing Selenium- and Iodine-Containing Pharmaceuticals Based on Blue-Green Algae Spirulina Platensis

    E-Print Network [OSTI]

    Mosulishvili, L M; Belokobylsky, A I; Khisanishvili, L A; Frontasyeva, M V; Pavlov, C C; Gundorina, S F

    2001-01-01

    The great potential of using blue-green algae Spirulina platensis as a matrix for the production of selenium- and iodine-containing pharmaceuticals is shown experimentally. The background levels of 31 major, minor and trace elements (Na, Mg, Al, Cl, K, Ca, Sc, V, Cr, Mn, Fe, Co, Ni (using -reaction), As, Br, Zn, Rb, Mo, Ag, Sb, I, Ba, Sm, Tb, Tm, Hf, Ta, W, Au, Hg, Th) in Spirulina platensis biomass were determined by means of epithermal neutron activation analysis. The dependence of selenium and iodine accumulation in spirulina biomass on a nutrient medium loding of the above elements was characterised. To demonstrate the possibilities of determining toxic element intake by spirulina biomass, mercury was selected. The technological parameters for production of iodinated treatment-and-prophylactic pills are developed.

  10. Information technology and innovative drainage management practices for selenium load reduction from irrigated agriculture to provide stakeholder assurances and meet contaminant mass loading policy objectives

    SciTech Connect (OSTI)

    Quinn, N.W.T.

    2009-10-15

    Many perceive the implementation of environmental regulatory policy, especially concerning non-point source pollution from irrigated agriculture, as being less efficient in the United States than in many other countries. This is partly a result of the stakeholder involvement process but is also a reflection of the inability to make effective use of Environmental Decision Support Systems (EDSS) to facilitate technical information exchange with stakeholders and to provide a forum for innovative ideas for controlling non-point source pollutant loading. This paper describes one of the success stories where a standardized Environmental Protection Agency (EPA) methodology was modified to better suit regulation of a trace element in agricultural subsurface drainage and information technology was developed to help guide stakeholders, provide assurances to the public and encourage innovation while improving compliance with State water quality objectives. The geographic focus of the paper is the western San Joaquin Valley where, in 1985, evapoconcentration of selenium in agricultural subsurface drainage water, diverted into large ponds within a federal wildlife refuge, caused teratogenecity in waterfowl embryos and in other sensitive wildlife species. The fallout from this environmental disaster was a concerted attempt by State and Federal water agencies to regulate non-point source loads of the trace element selenium. The complexity of selenium hydrogeochemistry, the difficulty and expense of selenium concentration monitoring and political discord between agricultural and environmental interests created challenges to the regulation process. Innovative policy and institutional constructs, supported by environmental monitoring and the web-based data management and dissemination systems, provided essential decision support, created opportunities for adaptive management and ultimately contributed to project success. The paper provides a retrospective on the contentious planning process and offers suggestions as to how the technical and institutional issues could have been resolved faster through early adoption of some of the core principles of sound EDSS design.

  11. Rare-earth metal gallium silicides via the gallium self-flux method. Synthesis, crystal structures, and magnetic properties of RE(Ga1–xSix)? (RE=Y, La–Nd, Sm, Gd–Yb, Lu)

    SciTech Connect (OSTI)

    Darone, Gregory M.; Hmiel, Benjamin; Zhang, Jiliang [Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716 (United States); Saha, Shanta; Kirshenbaum, Kevin; Greene, Richard; Paglione, Johnpierre [Department of Physics, University of Maryland, College Park, Maryland 20742 (United States); Bobev, Svilen, E-mail: bobev@udel.edu [Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716 (United States)

    2013-05-01

    Fifteen ternary rare-earth metal gallium silicides have been synthesized using molten Ga as a molten flux. They have been structurally characterized by single-crystal and powder X-ray diffraction to form with three different structures—the early to mid-late rare-earth metals RE=La–Nd, Sm, Gd–Ho, Yb and Y form compounds with empirical formulae RE(GaxSi1–x)? (0.38?x?0.63), which crystallize with the tetragonal ?-ThSi? structure type (space group I4?/amd, No. 141; Pearson symbol tI12). The compounds of the late rare-earth crystallize with the orthorhombic ?-GdSi? structure type (space group Imma, No. 74; Pearson symbol oI12), with refined empirical formula REGaxSi2–x–y (RE=Ho, Er, Tm; 0.33?x?0.40, 0.10?y?0.18). LuGa?.?????Si?.????? crystallizes with the orthorhombic YbMn?.??Si?.?? structure type (space group Cmcm, No. 63; Pearson symbol oC24). Structural trends are reviewed and analyzed; the magnetic susceptibilities of the grown single-crystals are presented. - Graphical abstract: This article details the exploration of the RE–Ga–Si ternary system with the aim to systematically investigate the structural “boundaries” between the ?-ThSi? and ?-GdSi?-type structures, and studies of the magnetic properties of the newly synthesized single-crystalline materials. Highlights: • Light rare-earth gallium silicides crystallize in ?-ThSi? structure type. • Heavy rare-earth gallium silicides crystallize in ?-GdSi? structure type. • LuGaSi crystallizes in a defect variant of the YbMn?.??Si?.?? structure type.

  12. Growth of gallium nitride films via the innovative technique of atomic-layer epitaxy. Annual progress report, 1 June 1987-31 May 1988

    SciTech Connect (OSTI)

    Davis, R.F.; Paisley, M.J.; Sitar, Z.

    1988-06-01

    Gallium nitride (GaN) is a wide-bandgap (3.45 eV at 300K) III-V compound semiconductor. The large direct bandgap and high electron-drift velocity of GaN are important properties in the performance of short-wavelength optical devices and high-power microwave devices. Immediate applications that would be greatly enhanced by the availability of GaN and/or Al/sub x/Ga/sub 1-x/N devices include threat warning systems (based on the ultraviolet (UV) emission from the exhaust plumes of missiles) and radar systems (which require high-power microwave generation). Important future applications for devices produced from these materials include blue and ultraviolet semiconductor lasers, blue-light-emitting diodes (LEDs) and high temperature electronic devices. This report discusses this material.

  13. Effects of low-temperature (120?°C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

    SciTech Connect (OSTI)

    Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae; Oh, Byung Su; Joo, Min-Kyu; Ahn, Seung-Eon

    2014-12-28

    We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120?°C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

  14. Realization of write-once-read-many-times memory device with O{sub 2} plasma-treated indium gallium zinc oxide thin film

    SciTech Connect (OSTI)

    Liu, P. Chen, T. P. Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2014-01-20

    A write-once-read-many-times (WORM) memory devices based on O{sub 2} plasma-treated indium gallium zinc oxide (IGZO) thin films has been demonstrated. The device has a simple Al/IGZO/Al structure. The device has a normally OFF state with a very high resistance (e.g., the resistance at 2?V is ?10{sup 9} ? for a device with the radius of 50??m) as a result of the O{sub 2} plasma treatment on the IGZO thin films. The device could be switched to an ON state with a low resistance (e.g., the resistance at 2?V is ?10{sup 3} ? for the radius of 50??m) by applying a voltage pulse (e.g., 10?V/1??s). The WORM device has good data-retention and reading-endurance capabilities.

  15. Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

    SciTech Connect (OSTI)

    Lai, Hsin-Cheng [Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Pei, Zingway, E-mail: zingway@dragon.nchu.edu.tw [Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Center of Nanoscience and Nanotechnology, National Chung Hsing University, Taichung 40227, Taiwan (China); Jian, Jyun-Ruri; Tzeng, Bo-Jie [Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China)

    2014-07-21

    In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100?°C. The a-IGZO TFT exhibit a mobility of 5.13?cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4?mm (strain?=?1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10?V for 1500?s. Thus, this technology is suitable for use in flexible displays.

  16. Gallium interactions with Zircaloy 

    E-Print Network [OSTI]

    West, Michael Keith

    1998-01-01

    High fluence ion implantation of Ga ions was conducted ics. on heated Zircaloy-4 in the range of [] Ga ions/[]. Surface effects were studied using SEM and electron microphone analysis. The depth profile of Ga in the Zircaloy was characterized...

  17. A first-principles study of the electronic structure of Iron-Selenium; Implications for electron-phonon superconductivity

    E-Print Network [OSTI]

    Koufos, Alexander P; Mehl, Michael J

    2013-01-01

    We have performed density functional theory (DFT) calculations using the linearized augmented plane wave method (LAPW) with the local density approximation (LDA) functional to study the electronic structure of the iron-based superconductor Iron-Selenium (FeSe). In our study, we have performed a comprehensive set of calculations involving structural, atomic, and spin configurations. All calculations were executed using the tetragonal lead-oxide or P4/nmm structure, with various volumes, c/a ratios and internal parameters. Furthermore, we investigated the spin polarization using the LDA functional to assess ferromagnetism in this material. The paramagnetic LDA calculations find the equilibrium configuration of FeSe in the P4/nmm structure to have a volume of 472.5au$^3$ with a c/a ratio of 1.50 and internal parameter of 0.255, with the ferromagnetic having comparable results to the paramagnetic case. In addition, we calculated total energies for FeSe using a pseudopotential method, and found comparable results ...

  18. 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 1wileyonlinelibrary.com COMMUNICATION

    E-Print Network [OSTI]

    and the equilibrium SnS(g) vapour pressure The demand for low-cost and scalable renewable energy con- tinues to spur-per-year (GW/yr) levels,[1] while PV cells based on copper (indium, gallium) (diselenide, disulfide) (CIGS

  19. Effects of Series Resistance and Inductance on Solar Cell Admittance Measurements(a)

    E-Print Network [OSTI]

    Scofield, John H.

    on a variety of 0.43 cm2 area, copper indium gallium diselenide (CIGS) polycrystalline thin film solar cellsEffects of Series Resistance and Inductance on Solar Cell Admittance Measurements(a) John H Energy Materials and Solar Cells on April 17, 1994) Admittance measurements have been performed

  20. When you think of the film industry, what comes to mind? Entertainment. In this issue you will discover how films not only bring us the latest adventures but also are being sculptured at

    E-Print Network [OSTI]

    Demirel, Melik C.

    rooftop market. Solyndra uses a copper-indium-gallium-diselenide (CIGS) absorber layer in its solar cell to create revolutionary optics, semiconductors, medical devices, and solar cells. Spring 2009 In This Issue information, visit: www.jbg3.net Alumni Spotlight Phil Kraus (B.S. '93) is the director of technology at solar-cell

  1. Partitioning of mercury, arsenic, selenium, boron, and chloride in a full-scale coal combustion process equipped with selective catalytic reduction, electrostatic precipitation, and flue gas desulfurization systems

    SciTech Connect (OSTI)

    Chin-Min Cheng; Pauline Hack; Paul Chu; Yung-Nan Chang; Ting-Yu Lin; Chih-Sheng Ko; Po-Han Chiang; Cheng-Chun He; Yuan-Min Lai; Wei-Ping Pan

    2009-09-15

    A full-scale field study was carried out at a 795 MWe coal-fired power plant equipped with selective catalytic reduction (SCR), an electrostatic precipitator (ESP), and wet flue gas desulfurization (FGD) systems to investigate the distribution of selected trace elements (i.e., mercury, arsenic, selenium, boron, and chloride) from coal, FGD reagent slurry, makeup water to flue gas, solid byproduct, and wastewater streams. Flue gases were collected from the SCR outlet, ESP inlet, FGD inlet, and stack. Concurrent with flue gas sampling, coal, bottom ash, economizer ash, and samples from the FGD process were also collected for elemental analysis. By combining plant operation parameters, the overall material balances of selected elements were established. The removal efficiencies of As, Se, Hg, and B by the ESP unit were 88, 56, 17, and 8%, respectively. Only about 2.5% of Cl was condensed and removed from flue gas by fly ash. The FGD process removed over 90% of Cl, 77% of B, 76% of Hg, 30% of Se, and 5% of As. About 90% and 99% of the FGD-removed Hg and Se were associated with gypsum. For B and Cl, over 99% were discharged from the coal combustion process with the wastewater. Mineral trona (trisodium hydrogendicarbonate dehydrate, Na{sub 3}H(CO{sub 3}){sub 2}.2H{sub 2}O) was injected before the ESP unit to control the emission of sulfur trioxide (SO{sub 3}). By comparing the trace elements compositions in the fly ash samples collected from the locations before and after the trona injection, the injection of trona did not show an observable effect on the partitioning behaviors of selenium and arsenic, but it significantly increased the adsorption of mercury onto fly ash. The stack emissions of mercury, boron, selenium, and chloride were for the most part in the gas phase. 47 refs., 3 figs., 11 tabs.

  2. Affordable Solar Energy Solar Powder is a solar-energy company that has developed an innovative technology that will set a new

    E-Print Network [OSTI]

    Jawitz, James W.

    and distribute high-efficiency, high yield, low cost solar panels. The company is making green energy more and selenium. CIGS was chosen because of its high cell efficiency, high energy yield, and now with Solar Powder-powder that is mixed with a secret Solar Powder solvent to allow for liquid application. Solar Powder solar panels can

  3. Relationship between selenium body burdens and tissue concentrations in fish exposed to coal ash at the Tennessee Valley Authority Kingston spill site

    SciTech Connect (OSTI)

    Mathews, Teresa J; Fortner, Allison M; Jett, Robert T; Peterson, Mark J; Carriker, Neil; Morris, Jesse G; Gable, Jennifer

    2014-01-01

    In December 2008, 4.1 million m3 of coal ash were released into the Emory and Clinch Rivers by the Tennessee Valley Authority (TVA) Kingston Fossil Plant. Coal ash contains several contaminants, including the bioaccumulative metalloid selenium (Se). Because Se is predominantly accumulated in aquatic organisms through dietary, rather than aqueous exposure, tissue-based toxicity thresholds for Se are currently being considered. The proposed threshold concentrations range between 4-9 g/g Se (dry wt.) in whole body fish, with a proposed fillet threshold of 11.8 g/g. In the present study we examined the spatial and temporal trends in Se bioaccumulation and examined the relationship between the Se content in fillets and in whole bodies of fish collected around the Kingston spill site to determine whether Se bioaccumulation was a significant concern at the ash spill site. While Se concentrations in fish (whole bodies and fillets) were elevated at sampling locations affected by the Kingston ash spill relative to reference locations, concentrations do not appear to be above risk thresholds and have not been increasing over the five year period since the spill. Our results are not only relevant to guiding the human health and ecological risk assessments at the Kingston ash spill site, but because of current national discussions on appropriate guidelines for Se in fish as well for the disposal of coal combustion wastes, our results are also relevant to the general understanding of Se bioaccumulation in contaminated water bodies.

  4. Modeling and simulation of CuIn{sub 1?x}Ga{sub x}Se{sub 2} based thin film solar cell

    SciTech Connect (OSTI)

    Kumari, S., E-mail: sarita.kumari132@gmail.com; Verma, A. S. [Department of Physics, Banasthali University, Rajasthan-304022 (India); Singh, P.; Gautam, R. [Department of Electronics and Communication, Krishna Institute of Engg. and Tech., Ghaziabad-201206 (India)

    2014-04-24

    In this work, CIGS (Copper Indium Gallium Diselenide) based solar cell structure has been simulated. We have been calculated short circuit current, open circuit voltage and efficiency of the cell. The thickness of the absorption layer is varied from 400 to 3000 nm, keeping the thickness of other layers unchanged. The effect of absorption layer thickness over cell performance has been analyzed and found that the efficiency increases upto 22% until the thickness of the absorption layer reaches around 2000 nm.

  5. SOLAR SEMINAR SERIES S P R I N G 2 0 1 3 P H O T O V O L T A I C S E M I N A R S E R I E S

    E-Print Network [OSTI]

    Ginzel, Matthew

    challenge for the success of copper indium gallium selenide (CIGS) photovoltaic cells. Co-evaporation yieldsSOLAR SEMINAR SERIES S P R I N G 2 0 1 3 P H O T O V O L T A I C S E M I N A R S E R I E S BILLY J spanning more than 30 years in the solar industry. He is an expert in the business and science

  6. Overview and Challenges of Thin Film Solar Electric Technologies

    SciTech Connect (OSTI)

    Ullal, H. S.

    2008-12-01

    In this paper, we report on the significant progress made worldwide by thin-film solar cells, namely, amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Thin-film photovoltaic (PV) technology status is also discussed in detail. In addition, R&D and technology challenges in all three areas are elucidated. The worldwide estimated projection for thin-film PV technology production capacity announcements are estimated at more than 5000 MW by 2010.

  7. Formation of selenide, sulfide or mixed selenide-sulfide films on metal or metal coated substrates

    DOE Patents [OSTI]

    Eser, Erten; Fields, Shannon

    2012-05-01

    A process and composition for preventing cracking in composite structures comprising a metal coated substrate and a selenide, sulfide or mixed selenide sulfide film. Specifically, cracking is prevented in the coating of molybdenum coated substrates upon which a copper, indium-gallium diselenide (CIGS) film is deposited. Cracking is inhibited by adding a Se passivating amount of oxygen to the Mo and limiting the amount of Se deposited on the Mo coating.

  8. CuIn1-xGaxS2 thin film solar cells with ZnxCd1-xS as heterojunction partner Bhaskar Kumar

    E-Print Network [OSTI]

    Sites, James R.

    CuIn1-xGaxS2 thin film solar cells with ZnxCd1-xS as heterojunction partner Bhaskar Kumar 1 , Parag 80523 ABSTRACT Copper indium gallium sulfide, CuIn1-xGaxS2 (CIGS2) solar cells prepared with chemical/heterojunction partner/ ZnO/Cr/Ag contact fingers solar cells of area ~0.44 cm 2 were fabricated at FSEC

  9. Recent developments in high-efficiency PV cells

    SciTech Connect (OSTI)

    Deb, S.

    2000-05-22

    Enormous progress has been made in recent years on a number of photovoltaic (PV) materials and devices in terms of conversion efficiencies. Ultrahigh-efficiency (>30{percent}) PV cells have been fabricated from gallium arsenide (GaAs) and its ternary alloys such as gallium indium phosphide (GaInP{sub 2}). The high-efficiency GaAs-based solar cells are being produced on a commercial scale, particularly for space applications. Efficiencies in the range of 18{percent} to 24{percent} have been achieved in traditional silicon-based devices fabricated from both multicrystalline and single-crystal materials. Major advances in efficiency have also been made on various thin-film solar cells based on amorphous silicon (aSi:H), copper gallium indium diselenide (CIGS), and cadmium telluride materials. This paper gives a brief overview of the recent progress in PV cell efficiencies based on these materials and devices.

  10. Liquid precursor inks for deposition of In--Se, Ga--Se and In--Ga--Se

    DOE Patents [OSTI]

    Curtis, Calvin J.; Hersh, Peter A.; Miedaner, Alexander; Habas, Susan; van Hest, Maikel; Ginley, David S.

    2015-08-11

    An ink includes a solution of selenium in ethylene diamine solvent and a solution of at least one metal salt selected from the group consisting of an indium salt or a gallium salt in at least one solvent including an organic amide. The organic amide can include dimethylformamide. The organic amide can include N-methylpyrrolidone.

  11. VOLUME 76, NUMBER 8 P H Y S I C A L R E V I E W L E T T E R S 19 FEBRUARY 1996 Large Local-Field Corrections in Optical Rotatory Power of Quartz and Selenium

    E-Print Network [OSTI]

    Wilkins, John

    local fields are needed despite the vector character of light. A self-energy-corrected local-density for linearly polarized light. This phenomenon is described by the optical rotatory power r v nL 2 nR 2c, where-Field Corrections in Optical Rotatory Power of Quartz and Selenium Lars Jönsson,1 Zachary H. Levine,1,2 and John W

  12. Gallium composition dependence of crystallographic and thermoelectric properties in polycrystalline type-I Ba{sub 8}Ga{sub x}Si{sub 46-x} (nominal x=14-18) clathrates prepared by combining arc melting and spark plasma sintering methods

    SciTech Connect (OSTI)

    Anno, Hiroaki; JST, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 ; Yamada, Hiroki; Nakabayashi, Takahiro; Hokazono, Masahiro; Shirataki, Ritsuko; JST, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075

    2012-09-15

    The gallium composition dependence of crystallographic and thermoelectric properties in polycrystalline n-type Ba{sub 8}Ga{sub x}Si{sub 46-x} (nominal x=14-18) compounds with the type-I clathrate structure is presented. Samples were prepared by combining arc melting and spark plasma sintering methods. Powder x-ray diffraction, Rietveld analysis, scanning electron microscopy, and energy-dispersive x-ray spectroscopy show that the solubility limit of gallium in the type-I clathrate phase is close to x=15, which is slightly higher than that for a single crystal. The carrier concentration at room temperature decreases from 2 Multiplication-Sign 10{sup 21} cm{sup -3} to 4 Multiplication-Sign 10{sup 20} cm{sup -3} as the Ga content x increases. The Seebeck coefficient, the electrical conductivity, and the thermal conductivity vary systematically with the carrier concentration when the Ga content x varies. The effective mass (2.0m{sub 0}), the carrier mobility (10 cm{sup 2} V{sup -1} s{sup -1}), and the lattice thermal conductivity (1.1 W m{sup -1} K{sup -1}) are determined for the Ga content x=14.51. The dimensionless thermoelectric figure of merit ZT is about 0.55 at 900 K for the Ga content x=14.51. The calculation of ZT using the experimentally determined material parameters predicts ZT=0.8 (900 K) at the optimum carrier concentration of about 2 Multiplication-Sign 10{sup 20} cm{sup -3}. - Graphical abstract: The gallium composition dependence of crystallographic and thermoelectric properties is presented on polycrystalline n-type Ba{sub 8}Ga{sub x}Si{sub 46-x} with the type-I clathrate structure prepared by combining arc melting and spark plasma sintering methods. The thermoelectric figure of merit ZT reaches 0.55 at 900 K due to the increase in the Ga content (close to x=15), and a calculation predicts further improvement of ZT at the optimized carrier concentration. Highlights: Black-Right-Pointing-Pointer Crystallographic properties of Ba{sub 8}Ga{sub x}Si{sub 46-x} clathrates are characterized. Black-Right-Pointing-Pointer Arc melting and spark plasma sintering process enables increase of Ga content. Black-Right-Pointing-Pointer We elucidate the Ga composition dependence of thermoelectric properties. Black-Right-Pointing-Pointer Thermoelectric figure of merit ZT is improved due to the increased Ga content. Black-Right-Pointing-Pointer Calculation predicts a potential ZT=0.8 at 900 K at optimized carrier concentration.

  13. PROJECT PROFILE: From Modules to Atoms: Increasing Reliability/Stability of Commercially Relevant Photovoltaic Technologies

    Broader source: Energy.gov [DOE]

    While there are statistical studies and macroscopic descriptions of module-level degradation, there is a lack of understanding of the structural, chemical, and electrical properties at the microscopic scale of how these processes occur and how to reduce or eliminate them. The project will study reliability-related defects in major photovoltaic (PV) technologies that include silicon (Si), cadmium telluride (CdTe), and copper indium gallium selenide (CIGS). Researchers will use imaging and microscopy characterization tools along with multi-physics modeling to derive the causes of power-limiting defects that are responsible for potential-induced degradation in Si, metastability and transient degradations in CdTe, and increased degradation due to reverse-bias breakdown in CIGS.

  14. The performance of a combined solar photovoltaic (PV) and thermoelectric generator (TEG) system

    E-Print Network [OSTI]

    Bjørk, R

    2015-01-01

    The performance of a combined solar photovoltaic (PV) and thermoelectric generator (TEG) system is examined using an analytical model for four different types of commercial PVs and a commercial bismuth telluride TEG. The TEG is applied directly on the back of the PV, so that the two devices have the same temperature. The PVs considered are crystalline Si (c-Si), amorphous Si (a-Si), copper indium gallium (di)selenide (CIGS) and cadmium telluride (CdTe) cells. The degradation of PV performance with temperature is shown to dominate the increase in power produced by the TEG, due to the low efficiency of the TEG. For c-Si, CIGS and CdTe PV cells the combined system produces a lower power and has a lower efficiency than the PV alone, whereas for an a-Si cell the total system performance may be slightly increased by the TEG.

  15. Direct measurements of band gap grading in polycrystalline CIGS solar cells

    E-Print Network [OSTI]

    Heinrich, M P; Zhang, Y; Kiowski, O; Powalla, M; Lemmer, U; Slobodskyy, A

    2010-01-01

    We present direct measurements of depth-resolved band gap variations of CuIn(1-x)Ga(x)Se2 thin-film solar cell absorbers. A new measurement technique combining parallel measurements of local thin-film interference and spectral photoluminescence was developed for this purpose. We find sample-dependent correlation parameters between measured band gap depth and composition profiles, and emphasize the importance of direct measurements. These results bring a quantitative insight into the electronic properties of the solar cells and open a new way to analyze parameters that determine the efficiency of solar cells.

  16. Direct measurements of band gap grading in polycrystalline CIGS solar cells

    E-Print Network [OSTI]

    M. P. Heinrich; Z-H. Zhang; Y. Zhang; O. Kiowski; M. Powalla; U. Lemmer; A. Slobodskyy

    2010-09-20

    We present direct measurements of depth-resolved band gap variations of CuIn(1-x)Ga(x)Se2 thin-film solar cell absorbers. A new measurement technique combining parallel measurements of local thin-film interference and spectral photoluminescence was developed for this purpose. We find sample-dependent correlation parameters between measured band gap depth and composition profiles, and emphasize the importance of direct measurements. These results bring a quantitative insight into the electronic properties of the solar cells and open a new way to analyze parameters that determine the efficiency of solar cells.

  17. Post-Deposition Treatment Boosts CIGS Solar Cell Performance (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2014-08-01

    NREL's use of potassium fluoride process improves the open-circuit voltage and conversion efficiency.

  18. Solid State Theory of Photovoltaic Materials: Nanoscale Grain Boundaries and Doping CIGS

    SciTech Connect (OSTI)

    Zunger, A

    2005-01-01

    We use modern first-principles electronic structure theory to investigate (1) why are grain boundaries in chalcopyrites passive; (2) can chalcopyrites be doped by transition metals, and; (3) can hot electrons and carrier multiplication be efficient in quantum-dot solar cells.

  19. CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and Accomplishments

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield MunicipalTechnical Report:Speeding accessby a contractorEnergy, science, and7451 Clean EnergyNational

  20. Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization, Critical Issues, and Applications; Preprint

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking With U.S.Week DayDr. JeffreyThermalš ÐÓÔÑ ÒØ Ó À

  1. Superconductive silicon nanowires using gallium beam lithography.

    SciTech Connect (OSTI)

    Henry, Michael David; Jarecki, Robert Leo,

    2014-01-01

    This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

  2. Electronic properties of gallium nitride nanowires

    E-Print Network [OSTI]

    Yoon, Joonah

    2008-01-01

    This thesis presents a systematic study of the electrical transport in GaN nanowires. Particularly, the effect of the surrounding dielectric on the conductivity of GaN nanowires is experimentally shown for the first time. ...

  3. Efficient wireless charging with gallium nitride FETs

    E-Print Network [OSTI]

    Yeh, Theresa (Theresa I.)

    2014-01-01

    Though wireless charging is more convenient than traditional wired charging methods, it is currently less efficient. This not only wastes power but can also result in a longer charging time. Improving the efficiency of ...

  4. Smooth cubic commensurate oxides on gallium nitride

    SciTech Connect (OSTI)

    Paisley, Elizabeth A.; Gaddy, Benjamin E.; LeBeau, James M.; Shelton, Christopher T.; Losego, Mark D.; Mita, Seiji; Collazo, Ramón; Sitar, Zlatko; Irving, Douglas L.; Maria, Jon-Paul; Biegalski, Michael D.; Christen, Hans M.

    2014-02-14

    Smooth, commensurate alloys of ?111?-oriented Mg{sub 0.52}Ca{sub 0.48}O (MCO) thin films are demonstrated on Ga-polar, c+ [0001]-oriented GaN by surfactant-assisted molecular beam epitaxy and pulsed laser deposition. These are unique examples of coherent cubic oxide|nitride interfaces with structural and morphological perfection. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100× reduction in leakage current density for the surfactant-assisted samples. HAADF-STEM images of the MCO|GaN interface show commensurate alignment of atomic planes with minimal defects due to lattice mismatch. STEM and DFT calculations show that GaN c/2 steps create incoherent boundaries in MCO over layers which manifest as two in-plane rotations and determine consequently the density of structural defects in otherwise coherent MCO. This new understanding of interfacial steps between HCP and FCC crystals identifies the steps needed to create globally defect-free heterostructures.

  5. Growth process for gallium nitride porous nanorods

    DOE Patents [OSTI]

    Wildeson, Isaac Harshman; Sands, Timothy David

    2015-03-24

    A GaN nanorod and formation method. Formation includes providing a substrate having a GaN film, depositing SiN.sub.x on the GaN film, etching a growth opening through the SiN.sub.x and into the GaN film, growing a GaN nanorod through the growth opening, the nanorod having a nanopore running substantially through its centerline. Focused ion beam etching can be used. The growing can be done using organometallic vapor phase epitaxy. The nanopore diameter can be controlled using the growth opening diameter or the growing step duration. The GaN nanorods can be removed from the substrate. The SiN.sub.x layer can be removed after the growing step. A SiO.sub.x template can be formed on the GaN film and the GaN can be grown to cover the SiO.sub.x template before depositing SiN.sub.x on the GaN film. The SiO.sub.x template can be removed after growing the nanorods.

  6. Interactions of gallium with zircaloy cladding 

    E-Print Network [OSTI]

    Mitchell, Lee Josey

    1999-01-01

    A mastering system was constructed and installed on the current low energy accelerator of the Ion Beam Laboratory in the Department of Nuclear Engineering. Galium was implanted into heated zircaloy targets at nuances of 3x10¹?, 1x10¹? and 1x10...

  7. Self- and zinc diffusion in gallium antimonide

    E-Print Network [OSTI]

    Nicols, Samuel Piers

    2002-01-01

    into building gas centrifuges to enrich uranium mined at itsspent uranium in nuclear reactors. The gas centrifuges are

  8. Statistical Methods for Enhanced Metrology in Semiconductor/Photovoltaic Manufacturing

    E-Print Network [OSTI]

    Zeng, Dekong

    2012-01-01

    VACUUM PROCESSING OF CIGS SOLAR CELLS ON FLEXIBLE POLYMERICcell………………………… Figure 2.5 CIGS based solar cell fabricationcells. Figure 2.5 CIGS based solar cell fabrication flow [

  9. The Effects of Non-Uniform Electronic Properties on Thin Film Photovoltaics

    E-Print Network [OSTI]

    Brown, Gregory Ferguson

    2011-01-01

    material   systems.   CIGS  solar  cells  grown  at  the  the  depth  of  the  CIGS  solar  cells  improve  carrier  length  in  CIGS  solar  cells  has  no  correlation  with  

  10. Influence of different sulfur to selenium ratios on the structural and electronic properties of Cu(In,Ga)(S,Se){sub 2} thin films and solar cells formed by the stacked elemental layer process

    SciTech Connect (OSTI)

    Mueller, B. J.; Zimmermann, C.; Haug, V. Koehler, T.; Zweigart, S.; Hergert, F.; Herr, U.

    2014-11-07

    In this study, we investigate the effect of different elemental selenium to elemental sulfur ratios on the chalcopyrite phase formation in Cu(In,Ga)(S,Se){sub 2} thin films. The films are formed by the stacked elemental layer process. The structural and electronic properties of the thin films and solar cells are analyzed by means of scanning electron microscopy, glow discharge optical emission spectrometry, X-ray diffraction, X-ray fluorescence, Raman spectroscopy, spectral photoluminescence as well as current-voltage, and quantum efficiency measurements. The influence of different S/(S+Se) ratios on the anion incorporation and on the Ga/In distribution is investigated. We find a homogenous sulfur concentration profile inside the film from the top surface to the bottom. External quantum efficiency measurements show that the band edge of the solar cell device is shifted to shorter wavelength, which enhances the open-circuit voltages. The relative increase of the open-circuit voltage with S/(S+Se) ratio is lower than expected from the band gap energy trend, which is attributed to the presence of S-induced defects. We also observe a linear decrease of the short-circuit current density with increasing S/(S+Se) ratio which can be explained by a reduced absorption. Above a critical S/(S+Se) ratio of around 0.61, the fill factor drops drastically, which is accompanied by a strong series resistance increase which may be attributed to changes in the back contact or p-n junction properties.

  11. Three approaches to economical photovoltaics: conformal Cu2S, organic luminescent films, and PbSe nanocrystal superlattices

    E-Print Network [OSTI]

    Carbone, Ian Anthony

    2013-01-01

    oxygen and water. Conventional CIGS solar cells must also bereal possibility. CIGS solar cells suffer similar parasitic

  12. Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO); Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

    1998-03-24

    High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

  13. Effect of a liquid multi-vitamin-mineral supplement on anaerobic exercise performance

    E-Print Network [OSTI]

    Fry, Andrew C.; Bloomer, Richard J.; Falvo, Michael J.; Moore, Chris A.; Schilling, Brian K.; Weiss, Lawrence W.

    2006-01-01

    IU 150 Vitamin E 45 IU 150 Calcium 60 mg 8 Chromium 150 ?g — Iodine 150 ?g 100 Iron 150 ?g 66 Magnesium 100 mg — Manganese 5 mg — Potassium 100 mg — Selenium 150 ?g — Sodium 5 mg 2 Zinc 23 mg 150 Each 1 oz. serving contains bromide, cerium, cesium, cobalt, copper, dysprosium, erbium, europium, fluoride, gadolinium, gallium, germanium, gold, hafnium, holmium, indium, iridium, kjeldhal, lanthanum, lithium, molybde- num, neodymium, nickel...

  14. This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

    DOE Patents [OSTI]

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  15. RESEARCH ARTICLE Electrocoagulation of colloidal biogenic selenium

    E-Print Network [OSTI]

    -1970s, Lake Belews in North Carolina was affected by Se oxyanions released by a coal-fired power plant /Accepted: 9 September 2014 /Published online: 20 September 2014 # Springer-Verlag Berlin Heidelberg 2014

  16. Comparative alternative materials assessment to screen toxicity hazards in the life cycle of CIGS thin film photovoltaics

    E-Print Network [OSTI]

    Eisenberg, DA; Yu, M; Lam, CW; Ogunseitan, OA; Schoenung, JM

    2013-01-01

    Ed. ), Handbook on Life Cycle Assessment: Operational GuideManagement – Life Cycle Assessment – Principles andthe gap between life cycle assessments and product design,

  17. Comparative alternative materials assessment to screen toxicity hazards in the life cycle of CIGS thin film photovoltaics

    E-Print Network [OSTI]

    Eisenberg, DA; Yu, M; Lam, CW; Ogunseitan, OA; Schoenung, JM

    2013-01-01

    nickel alloy Titanium Polyimide Flexible polymers Notes:hazard substrate material is: polyimide. The only metal backdioxide Molybdenum Polyimide Notes: This is a subset of all

  18. Comparative alternative materials assessment to screen toxicity hazards in the life cycle of CIGS thin film photovoltaics

    E-Print Network [OSTI]

    Eisenberg, DA; Yu, M; Lam, CW; Ogunseitan, OA; Schoenung, JM

    2013-01-01

    Polydimethylsiloxane Thermoplastic polyurethane Notes: Thispolydimethylsiloxane (PDMS) and thermoplastic polyurethane.emerging technology with thermoplastic polyurethane has a

  19. Comparative alternative materials assessment to screen toxicity hazards in the life cycle of CIGS thin film photovoltaics

    E-Print Network [OSTI]

    Eisenberg, DA; Yu, M; Lam, CW; Ogunseitan, OA; Schoenung, JM

    2013-01-01

    deposition; ALD, atomic layer deposition; ILGAR, ion layerdeposition; ALD, atomic layer deposition. D.A. Eisenberg et

  20. Comparative alternative materials assessment to screen toxicity hazards in the life cycle of CIGS thin film photovoltaics

    E-Print Network [OSTI]

    Eisenberg, DA; Yu, M; Lam, CW; Ogunseitan, OA; Schoenung, JM

    2013-01-01

    Ed. ), Handbook on Life Cycle Assessment: Operational Guidethe gap between life cycle assessments and product design,Management – Life Cycle Assessment – Principles and

  1. Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts

    SciTech Connect (OSTI)

    Chen, J. C. H. Klochan, O.; Micolich, A. P.; Hamilton, A. R.; Das Gupta, K.; Sfigakis, F.; Ritchie, D. A.; Trunov, K.; Wieck, A. D.; Reuter, D.

    2015-05-04

    We show that ballistic one-dimensional channels can be formed in an ambipolar device fabricated on a high mobility Al{sub 0.34}Ga{sub 0.66}As/GaAs heterostructure. Both electron and hole quantised conductances can be measured in the same one-dimensional channel. We have used this device to compare directly the subband spacings of the two charge carriers in the same confining potential and used this to compare the electron and hole effective masses.

  2. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Structural vacancies are a source of numerous interesting structural, electronic, and optical properties, and materials scientists often rely them as an important building...

  3. Hybrid Solar Cells based on Gallium Arsenide Nanopillars

    E-Print Network [OSTI]

    Haddad, Michael Anthony

    2014-01-01

    Polymer-Based Organic Solar Cells. Chemical Reviews, 2007.et al. , Hybrid Heterojunction Solar Cell Based on Organic–styrenesulfonate) hybrid solar cells. Nanotechnology, 2010.

  4. Ultra-low threshold Gallium Nitride photonic crystal nanobeam laser

    E-Print Network [OSTI]

    Niu, Nan; Woolf, Alexander; Wang, Danquing; Zhu, Tongtong; Quan, Qimin; Oliver, Rachel A.; Hu, Evelyn L.

    2015-06-10

    to achieve lasing in the QW structures, heating of the nanobeam structures and effects such as free carrier absorption may explain the lower percentage of successful lasing in the QW devices. For 5 fQW nanobeams that were analyzed in detail, the lasing... with excellent performance. Because of their compact size and low thresholds, these devices are excellent candidates for efficient, on-chip optical sources in the blue portion of the spectrum. Corresponding Author *email: nanniu...

  5. Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices

    SciTech Connect (OSTI)

    Patibandla, Nag; Agrawal, Vivek

    2012-12-01

    Over the course of this program, Applied Materials, Inc., with generous support from the United States Department of Energy, developed a world-class three chamber III-Nitride epi cluster tool for low-cost, high volume GaN growth for the solid state lighting industry. One of the major achievements of the program was to design, build, and demonstrate the world’s largest wafer capacity HVPE chamber suitable for repeatable high volume III-Nitride template and device manufacturing. Applied Materials’ experience in developing deposition chambers for the silicon chip industry over many decades resulted in many orders of magnitude reductions in the price of transistors. That experience and understanding was used in developing this GaN epi deposition tool. The multi-chamber approach, which continues to be unique in the ability of the each chamber to deposit a section of the full device structure, unlike other cluster tools, allows for extreme flexibility in the manufacturing process. This robust architecture is suitable for not just the LED industry, but GaN power devices as well, both horizontal and vertical designs. The new HVPE technology developed allows GaN to be grown at a rate unheard of with MOCVD, up to 20x the typical MOCVD rates of 3{micro}m per hour, with bulk crystal quality better than the highest-quality commercial GaN films grown by MOCVD at a much cheaper overall cost. This is a unique development as the HVPE process has been known for decades, but never successfully commercially developed for high volume manufacturing. This research shows the potential of the first commercial-grade HVPE chamber, an elusive goal for III-V researchers and those wanting to capitalize on the promise of HVPE. Additionally, in the course of this program, Applied Materials built two MOCVD chambers, in addition to the HVPE chamber, and a robot that moves wafers between them. The MOCVD chambers demonstrated industry-leading wavelength yield for GaN based LED wafers and industry-leading uptime enabled in part by a novel in-situ cleaning process developed in this program.

  6. High Quality, Low Cost Bulk Gallium Nitride Substrates Grown...

    Broader source: Energy.gov (indexed) [DOE]

    Project deliverables Reproducible monocrystalline growth process with sustainable film growth rate of at least 0.5mmhr scalable to >100mm substrate diameter and film...

  7. Broadband electrooptic modulators based on gallium arsenide materials

    E-Print Network [OSTI]

    Shamir, Orit A

    2012-01-01

    Optical Arbitrary Waveform Generation (OAWG) combines frequency combs and frequency-by- frequency pulse shapers to synthesize optical waveforms. The OAWG technique has a wide variety of applications, ranging from high ...

  8. Self-aligned submicron gate length gallium arsenide MESFET 

    E-Print Network [OSTI]

    Huang, Hsien-Ching

    1987-01-01

    38 21. Proximity cap annealing . 22. Temperature profile of post implant anneal 46 47 23. 24. 25. 26. 27. 28. 29. 30. "Pits" or holes in GaAs post implant anneal without sacrificial cap Silicon monoxide source (bafile box) used.... 16(b)). The bottom resist layer is then further etched in the oxygen plasma to produce undercutting for the desire gate structure. The amount of undercut is determined by the desired length of the gate and is the width of the remaining resist...

  9. High-Quality, Low-Cost Bulk Gallium Nitride Substrates

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    could accelerate the adoption of energy-efficient GaN-based lighting and high-voltage power switching devices, ignite new market applications, and reduce U.S. power...

  10. Superconductivity in gallium-substituted Ba8Si46 clathrates 

    E-Print Network [OSTI]

    Li, Yang; Zhang, Ruihong; Liu, Yang; Chen, Ning; Luo, Z. P.; Ma, Xingqiao; Cao, Guohui; Feng, Z. S.; Hu, Chia-Ren; Ross, Joseph H., Jr.

    2007-01-01

    We report a joint experimental and theoretical investigation of superconductivity in Ga-substituted type-I silicon clathrates. We prepared samples of the general formula Ba8Si46-xGax, with different values of x. We show that Ba8Si40Ga6 is a bulk...

  11. Rutherford backscattering analysis of gallium implanted 316 stainless steel 

    E-Print Network [OSTI]

    Ortensi, Javier

    2000-01-01

    Ion implantation of Ga ions into 316 stainless steel was performed at fluences ranging from 8x10¹? to 10¹? ions/cm². The depth profile of Ga in the steel was analyzed via Rutherford Backscattering and ToFSIMS. The surface effects were...

  12. Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:Financing Tool Fits the BillDepartment ofEnergyJoe25,

  13. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home RoomPreservationBio-Inspired SolarAbout /Two0 -Using supercritical carbon dioxideVIDEO:

  14. Convective Turbulence in Liquid Gallium and Sodium | Argonne Leadership

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  15. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  16. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  17. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking WithTelecentric viewing systemVacancy

  18. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  19. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  20. Electrochemical Solution Growth: Gallium Nitride Crystal Growth - Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  1. Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics

    E-Print Network [OSTI]

    Chung, Choong-Heui

    2012-01-01

    of a CIGS film of 19.9% efficiency solar cells taken fromCIGS grains of 19.9% efficiency solar cells [5] and currentof a CIGS film of 19.9% efficiency solar cells taken from

  2. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    E-Print Network [OSTI]

    Kang, Jin Sung

    2012-01-01

    better mechanical durability. CIGS solar cell has about 20%5]. However, CIGS solar cells degrade with humidity andSelenide (CIGS)[3] and organic polymer[4] solar cells are

  3. Laser Induced Breakdown Spectroscopy and Applications Toward Thin Film Analysis

    E-Print Network [OSTI]

    Owens, Travis Nathan

    2011-01-01

    of CIGS solar cells . Conclusions . . . . . . . . . . . . .roll-to-roll printed CIGS solar cell on aluminum substrateDepth profiling of CIGS solar cell using a nanosecond Nd:YAG

  4. Femtosecond laser processing of photovoltaic and transparent materials

    E-Print Network [OSTI]

    Ahn, Sanghoon

    2013-01-01

    of   'ink   based'   CIGS   solar   cells/modules.    Ink-­?based'   CIGS   solar   cells   on   lightweight  Figure 4-2. Ink-based CIGS solar cell, cross section by

  5. Creating CZTS Thin Films Via Stacked Metallic CVD and Sulfurization

    E-Print Network [OSTI]

    Bielecki, Anthony

    2013-01-01

    film solar cells. CIGS solar cell efficiencies have beenCIGS, making it a favorable choice for thin-film solar cells.thin film solar cell [3]. However, use of CIGS has a number

  6. Molecular solution processing of metal chalcogenide thin film solar cells

    E-Print Network [OSTI]

    Yang, Wenbing

    2013-01-01

    3-6,3-7] Chalcopyrite CIGS solar cells, without introducingperformance CISS and CIGS solar cells with efficiencies uptellurium might impede CIGS/CdTe solar cells from reaching

  7. Selective Chemistry of Metal Oxide Atomic Layer Deposition on Si Based Substrate Surfaces

    E-Print Network [OSTI]

    Guo, Lei

    2015-01-01

    of the solar cells. In CIGS solar cells, the buffer layers,encapsulation of CIGS and OPV solar cells[24, 25], barrierof flexible CIGS and OPV solar cells, robust, transparent

  8. Fully Solution-Processed Copper Chalcopyrite Thin Film Solar Cells: Materials Chemistry, Processing, and Device Physics

    E-Print Network [OSTI]

    Chung, Choong-Heui

    2012-01-01

    cm 2 ) efficiency CIGS solar cells taken from reference [and 20.3% efficiency CIGS solar cells [6] through the use ofcm 2 ) efficiency CIGS solar cells taken from reference [6].

  9. Flexible Ultra Moisture Barrier Film for Thin-Film Photovoltaic Applications

    SciTech Connect (OSTI)

    David M. Dean

    2012-10-30

    Flexible Thin-film photovoltaic (TFPV) is a low cost alternative to incumbent c-Si PV products as it requires less volume of costly semiconductor materials and it can potentially reduce installation cost. Among the TFPV options, copper indium gallium diselenide (CIGS) has the highest efficiency and is believed to be one of the most attractive candidates to achieve PV cost reduction. However, CIGS cells are very moisture sensitive and require module water vapor transmission rate (WVTR) of less than 1x10-4 gram of water per square meter per day (g-H2O/m2/day). Successful development and commercialization of flexible transparent ultra moisture barrier film is the key to enable flexible CIGS TFPV products, and thus enable ultimate PV cost reduction. At DuPont, we have demonstrated at lab scale that we can successfully make polymer-based flexible transparent ultra moisture barrier film by depositing alumina on polymer films using atomic layer deposition (ALD) technology. The layer by layer ALD approach results in uniform and amorphous structure which effectively reduces pinhole density of the inorganic coating on the polymer, and thus allow the fabrication of flexible barrier film with WVTR of 10-5 g-H2O/m2/day. Currently ALD is a time-consuming process suitable only for high-value, relatively small substrates. To successfully commercialize the ALD-on-plastic technology for the PV industry, there is the need to scale up this technology and improve throughput. The goal of this contract work was to build a prototype demonstrating that the ALD technology could be scaled-up for commercial use. Unfortunately, the prototype failed to produce an ultra-barrier film by the close of the project.

  10. Spectroscopic evidence for a surface layer in CuInSe2 : Cu deficiency

    E-Print Network [OSTI]

    Han, Sung-Ho; Hasoon, Falah S.; Hermann, Allen M.; Levi, Dean H.

    2007-01-01

    labora- tory thin-?lm PX-CIGS solar cells has surpassed 19%.?CIGS? is used as the absorber layer for high ef?ciency photovoltaic solar cells.

  11. Near-surface electronic defects and morphology of CuIn1xGaxSe2 Y. M. Strzhemechnya)

    E-Print Network [OSTI]

    Rockett, Angus

    CIGS is a leading candidate for high-efficiency solar cells, yet the defects and electronic structure to the near-band-edge peak. Polycrystalline CdS/CIGS/Mo/glass and CIGS/Mo/glass solar-cell layers were also to measure the local band and defect properties of epitaxial CIGS films having 002 , 220 / 204 , or 112

  12. Curriculum Vitae 2011Present Ph.D. in Physics, Colorado State University, Fort Collins.

    E-Print Network [OSTI]

    Sites, James R.

    -PACE CIGS program, mainly focus on the device characterization and simulation of CIGS solar cells with Zn of CIGS solar cells with sputtered Zn(O,S) buffer layers (in progress) July 2013 Summer Intern, DOE-V Distortion of CIGS Solar Cells with Sputtered Zn(O,S) Buffer Layers Department of Physics, 1875 Campus

  13. Hydrological and Geochemical Investigations of Selenium Behavior at Kesterson Reservoir

    E-Print Network [OSTI]

    Zawislanski, P.T.

    2010-01-01

    Ecological Characterization of Kesterson Reservoir. AnnualEcological Characterization of Kesterson Reservoir. Annual

  14. Development of a small selenium barrier layer photovoltaic cell 

    E-Print Network [OSTI]

    Pruett, George Richard

    1954-01-01

    ~ NL ~ "eh* I, I ~ ye~I ~ $8 843050 ~X Agese t l%ysse 4 Tehlo L Agl QNLSN& P tglWl ~ ARALU 0 p ~ ~ ~ ~ 5 QII4NiOONd504N' OISCES o ~ ~ ~ e ~ ~ + ~ ~ 8IAlt44WLO CIQ, e s s ~ e s i ~ s y ~ ~ ~ 5 4 0 ~ 4 0 4pp0%% ~ ~ ~ ~ ~ k ~ + l ~ lht44 At 801W...

  15. Macro-and Microscale Investigation of Selenium Speciation in Blackfoot

    E-Print Network [OSTI]

    , Department of Plant, Soils, and Entomological Sciences, and Department of Food Science and Toxicology, P, and suggested that the predominant species were Se(-II) species associated with recalcitrant organic matter, and Se(IV) species tightly bound to organic materials. This information can be used to predict

  16. Hydrological and Geochemical Investigations of Selenium Behavior at Kesterson Reservoir

    E-Print Network [OSTI]

    Zawislanski, P.T.

    2010-01-01

    Gas-phase porosities varied between individual aggregates from 0.00 to 0.40, and were maintained relatively constant

  17. Grain Accumulation of Selenium Species in Rice (Oryza sativa L.)

    SciTech Connect (OSTI)

    Carey, Anne-Marie; Scheckel, Kirk G.; Lombi, Enzo; Newville, Matt; Choi, Yongseong; Norton, Gareth J.; Price, Adam H.; Meharg, Andrew A.

    2012-09-05

    Efficient Se biofortification programs require a thorough understanding of the accumulation and distribution of Se species within the rice grain. Therefore, the translocation of Se species to the filling grain and their spatial unloading were investigated. Se species were supplied via cut flag leaves of intact plants and excised panicle stems subjected to a {+-} stem-girdling treatment during grain fill. Total Se concentrations in the flag leaves and grain were quantified by inductively coupled plasma mass spectrometry. Spatial accumulation was investigated using synchrotron X-ray fluorescence microtomography. Selenomethionine (SeMet) and selenomethylcysteine (SeMeSeCys) were transported to the grain more efficiently than selenite and selenate. SeMet and SeMeSeCys were translocated exclusively via the phloem, while inorganic Se was transported via both the phloem and xylem. For SeMet- and SeMeSeCys-fed grain, Se dispersed throughout the external grain layers and into the endosperm and, for SeMeSeCys, into the embryo. Selenite was retained at the point of grain entry. These results demonstrate that the organic Se species SeMet and SeMeSeCys are rapidly loaded into the phloem and transported to the grain far more efficiently than inorganic species. Organic Se species are distributed more readily, and extensively, throughout the grain than selenite.

  18. Hydrological and Geochemical Investigations of Selenium Behavior at Kesterson Reservoir

    E-Print Network [OSTI]

    Zawislanski, P.T.

    2010-01-01

    on trace metals in soils, sewage sludges, and sludge-treatedproducts from soil and sewage sludge. Science (Washington,

  19. Post-Deposition Treatment Boosts CIGS Solar Cell Performance (Fact Sheet), NREL Highlights in Research & Development, NREL (National Renewable Energy Laboratory)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesseworkSURVEYI/OPerformancePi Day Pi DayPorterfield namedNREL's use of

  20. Synthesis and characterization of visible emission from rare-earth doped aluminum nitride, gallium nitride and gallium aluminum nitride powders and thin films

    E-Print Network [OSTI]

    Tao, Jonathan Huai-Tse

    2010-01-01

    Development of White LED Based PV Lighting Systems," Solarstate Lighting: Failure Analysis of White LEDs," J. Cryst.scale indicator lighting, to using green LEDs for traffic

  1. Synthesis and characterization of visible emission from rare-earth doped aluminum nitride, gallium nitride and gallium aluminum nitride powders and thin films

    E-Print Network [OSTI]

    Tao, Jonathan Huai-Tse

    2010-01-01

    Converted White-Light-Emitting Diodes," Jap. J. Appl.in Packaging High Power Light Emitting Diode Arrays," Appl.doped III-N Light-Emitting Diodes," Appl. Phys. Lett. , 84 (

  2. Commercialization of gallium nitride nanorod arrays on silicon for solid-state lighting

    E-Print Network [OSTI]

    Wee, Qixun

    2008-01-01

    One important component in energy usage is lighting, which is currently dominated by incandescent and fluorescent lamps. However, due to potentially higher efficiencies and thus higher energy savings, solid-state lighting ...

  3. Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits

    E-Print Network [OSTI]

    Bickford, Justin Robert

    2008-01-01

    process: after sample pair wax wetting. .. 311 Figureprocess: after PMGI and wax dissolution and composite1. Picture of an example wax wetting two microscope slide

  4. Gallium Arsenide-Based Readout Electronics Thomas J. Cunningham and Eric R. Fossum

    E-Print Network [OSTI]

    Fossum, Eric R.

    to carrier freeze-out, so we expect GaAs readouts to produce less noise than silicon readouts at very low that operate at cryogenic temperatures. Presently, GaAs readout technology can draw from several types

  5. Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits

    E-Print Network [OSTI]

    Bickford, Justin Robert

    2008-01-01

    Mn),” Zeitschrift für Metallkunde, vol. 93, no. 9, pp. 885-Mn),” Zeitschrift für Metallkunde, vol. 93, no. 9, pp. 885-measurements,” Zeitschrift für Metallkunde, vol. 61, no. 5,

  6. Calculation of infrared plasma reflection spectra of inhomogeneously doped P-type gallium arsenide

    SciTech Connect (OSTI)

    CHEN Wei-xi; LI Guo-hua; NIU Jin-zhen; GUO Chang-zhi

    1982-01-01

    The influence of the surface concentration and concentration profile of free carriers, the layer thickness and free carrier concentration of the homogeneous substrate on the infrared plasma reflection spectra of inhomogeneously doped P-type GaAs layers is analyzed by computer solutions of differential equations for the optical admittance. Computed spectra are reported for four different profiles and several substrate concentrations. Methods for evaluation of the measured reflection spectra and the limitation of this technique are discussed.

  7. Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits

    E-Print Network [OSTI]

    Bickford, Justin Robert

    2008-01-01

    Grissom was always a friendly helping hand in the cleanroom.maintenance to various cleanroom equipment, in addition toenvironment of the old ITL cleanroom facility at UCSD.

  8. Luminescence dynamics and waveguide applications of europium doped gallium nitride powder

    E-Print Network [OSTI]

    Lipson, Michal

    of obtaining a powder form of RE doped GaN involve a combustion reaction15 or an ammonolysis of freeze onto the Si substrate, obtained using a HeCd laser 325 nm . A pulsed N2 laser 337.1 nm with 4 ns pulse

  9. Temperature-dependent luminescence of Ce3+ in gallium-substituted

    E-Print Network [OSTI]

    Walker, D. Greg

    were prepared via a simple combustion synthe- sis method and had the formula Y2.97Ce0.03 3 Al1-xGax 5O width of 0.1 nm. The pulse width was 4ns at a characteristic energy of 300 J. The excitation pulse

  10. Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

    SciTech Connect (OSTI)

    Esposto, Michele; Krishnamoorthy, Sriram; Nath, Digbijoy N.; Bajaj, Sanyam; Hung, Ting-Hsiang; Rajan, Siddharth

    2011-09-26

    We report on our investigation of the electrical properties of metal/Al{sub 2}O{sub 3}/GaN metal-insulator-semiconductor capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing the capacitance-voltage characteristics of atomic layer deposited Al{sub 2}O{sub 3} films on GaN substrates. The conduction band offset at the Al{sub 2}O{sub 3}/GaN interface was calculated to be 2.13 eV, in agreement with theoretical predications. A non-zero field of 0.93 MV/cm in the oxide under flat-band conditions in the GaN was inferred, which we attribute to a fixed net positive charge density of magnitude 4.60 x 10{sup 12 }cm{sup -2} at the Al{sub 2}O{sub 3}/GaN interface. We provide hypotheses to explain the origin of this charge by analyzing the energy band line-up.

  11. Gallium arsenide and multibandgap solar cell research: Final subcontract report, April 1984-April 1986

    SciTech Connect (OSTI)

    Vernon, S.M.; Tobin, S.P.; Wolfson, R.G.

    1987-07-01

    This report presents results of research in high-efficiency, low-cost solar cells, emphasizing heteroepitaxial growth of a III-V compound material onto a single-crystal silicon wafer. The report describes the start-up and characterization of a new metal-organic vapor deposition (MOCVD) reactor for the growth of GaAs, GaAlAs, and GaAsP on 2-in.-diameter substrates with excellent uniformity; optimization of the growth of Ge films on Si by a simple CVD technique; and production of a 9% efficient GaAs-on-Ge-on-Si solar cell. The advancements in the understanding of the GaAs-on-Si growth process and in the quality of the films are described. The work also included production of a 7% efficient GaAs-on-Si cell; development of a GaAsP-on-GaAs growth technology; production of a 16.5% efficient GaAsP cell and a 17.7% efficient GaAlAs cell on GaAs; and production of a 20.8% efficient GaAs-on-GaAs cell. Also described are improvements in cell processing technologies, including the use of a double-layer antireflection coating.

  12. May 20, 2010 Growing gallium arsenide in thick multilayer stacks could make a big

    E-Print Network [OSTI]

    Rogers, John A.

    of substrates, including glass and plastic. In photovoltaics, we expect the cost reductions to be significant, and that the ability to put cells on thin sheets of flexible plastic will increase the mechanical robustness://images.iop.org/objects/opo/news/16/5/11/gaas2.jpg) This strategy does not consume the wafer, which can be reused for many rounds

  13. Non-Destructive Spent Fuel Characterization with Semi-Conducting Gallium Arsinde Neutron Imaging Arrays

    SciTech Connect (OSTI)

    Douglas S. McGregor; Holly K. Gersch; Jeffrey D. Sanders; John C. Lee; Mark D. Hammig; Michael R. Hartman; Yong Hong Yang; Raymond T. Klann; Brian Van Der Elzen; John T. Lindsay; Philip A. Simpson

    2002-01-30

    High resistivity bulk grown GaAs has been used to produce thermal neutron imaging devices for use in neutron radiography and characterizing burnup in spent fuel. The basic scheme utilizes a portable Sb/Be source for monoenergetic (24 keV) neutron radiation source coupled to an Fe filter with a radiation hard B-coated pixellated GaAs detector array as the primary neutron detector. The coated neutron detectors have been tested for efficiency and radiation hardness in order to determine their fitness for the harsh environments imposed by spent fuel. Theoretical and experimental results are presented, showing detector radiation hardness, expected detection efficiency and the spatial resolution from such a scheme. A variety of advanced neutron detector designs have been explored, with experimental results achieving 13% thermal neutron detection efficiency while projecting the possibility of over 30% thermal neutron detection efficiency.

  14. Synthesis and optical properties of CsC1-doped gallium-sodium-sulfide glasses

    SciTech Connect (OSTI)

    Hehlen, Markus P [Los Alamos National Laboratory; Bennett, Bryan L [Los Alamos National Laboratory; Williams, Darrick J [Los Alamos National Laboratory; Muenchausen, Ross E [Los Alamos National Laboratory; Castro, Alonso [Los Alamos National Laboratory; Tornga, Stephanie C [Los Alamos National Laboratory

    2009-01-01

    Ga{sub 2}S{sub 3}-Na{sub 2}S (GNS) glasses doped with CsCl were synthesized in open crucibles under inert atmosphere. The evaporative loss of CsCl during glass melting was measured by energy dispersive X-ray spectroscopy and corrected for by biasing the CsCl concentration in the mixture of starting materials to obtain glasses with accurately controlled stoichiometry. Glass transition temperatures, refractive index dispersions, and band edge energies were measured for four GNS:CsCl glasses, and the respective values were found to significantly improve over earlier studies that did not mitigate CsCl evaporative losses. The refractive index dispersion measurements indicate that the Cs{sup +} and Cl{sup -} radii are 16% larger in GNS:CsCl glass than in bulk crystalline CsCl. The band edge energy increases from 2.97 eV in GNS glass to 3.32 eV in GNS glass doped with 20 mol% CsCl as a result of introducing Cl{sup -} ions having a large optical electronegativity. The large bandgap of 3.32 eV and the low (450 cm{sup -1}) phonon energy make GNS:20%CsCl an attractive host material for rare-earth ions with radiative transitions in the near ultra-violet, visible, and near-infrared spectral regions.

  15. FORMATION OF MESOPOROUS GALLIUM ARSENIDE FOR LIFT-OFF PROCESSES BY ELECTROCHEMICAL ETCHING

    E-Print Network [OSTI]

    of weight of multi-junction III-V semiconductor solar cells is an important issue for space applications to the industrial production of space solar cells. INTRODUCTION Space missions need a lightweight and reliable power source during their working life. The Vanguard-1 was the first satellite in 1958 to use Si solar cells

  16. Controlled VLS Growth of Indium, Gallium and Tin Oxide Nanowires via Chemical Vapor Transport

    E-Print Network [OSTI]

    Johnson, M.C.; Aloni, S.; McCready, D.E.; Bourret-Courchesne, E.D.

    2006-01-01

    6 Growth Rate (um/hr) Vapor Pressure (Torr) In2O3 Ga2O3 SnO2Rate (µm/hr) Metal Vapor Pressure (Torr) Crystalline phaseto the source metal vapor pressure. Initial experiments show

  17. Ultra-low power fiber-coupled gallium arsenide photonic crystal cavity electro-optic modulator

    E-Print Network [OSTI]

    Vuckovic, Jelena

    -induced change in refractive index of InP, GaAs, and InGaAsP," IEEE J. Quantum Electron. 26(1), 113­122 (1990). 7, "Ultra-low threshold, electrically pumped quantum dot photonic crystal nanocavity laser," to be published

  18. Gallium phosphide photonic crystal nanocavities in the visible Kelley Rivoire,a

    E-Print Network [OSTI]

    Vuckovic, Jelena

    for devices requiring very high brightness because of its in- direct band gap, incorporating InP quantum dots,7 fluorescent molecules,8 and visible colloidal quantum dots.9 To date, most photonic crystal devices operating or quantum wells,18 or colloidal quantum dots should greatly increase the quantum efficiency. Additionally

  19. Synthesis, characterization, and biotemplated assembly of indium nitride and indium gallium nitride nanoparticles

    E-Print Network [OSTI]

    Hsieh, Jennifer Chia-Jen

    2010-01-01

    A low-temperature, ambient pressure solution synthesis of colloidal InN nanoparticles is presented. This synthesis utilizes a previously dismissed precursor and results in individual, non-aggregated nanoparticles with ...

  20. Fabrication of optoelectronic microwave linear and ring resonators on a gallium arsenide substrate 

    E-Print Network [OSTI]

    Yeh, Chun-Liang

    1993-01-01

    the frequency ~, = urn' +amoco) have been observed. In the third part of the optical tests, the degenerate parametric amplification of an optical signal RF modulated at the first mode of the resonator with a microwave pumping LO at second mode... for the ring resonator. 77 46 Mixing Test Setup. 79 47 The sum signal IF, for the linear resonator with 10 prn coupling gap. The RF signal is at 4. 875 GHz and the I, O signal is at 4. 750 GHz, where the IF, signal (users = ans + uiqo) is detected at 9. 624...

  1. SAGE: Solar Neutrino Data from SAGE, the Russian-American Gallium Solar Neutrino Experiment

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    SAGE Collaboration

    SAGE is a solar neutrino experiment based on the reaction 71Ga + n goes to 71Ge + e-. The 71Ge atoms are chemically extracted from a 50-metric ton target of Ga metal and concentrated in a sample of germane gas mixed with xenon. The atoms are then individually counted by observing their decay back to 71Ga in a small proportional counter. The distinguishing feature of the experiment is its ability to detect the low-energy neutrinos from proton-proton fusion. These neutrinos, which are made in the primary reaction that provides the Sun's energy, are the major component of the solar neutrino flux and have not been observed in any other way. To shield the experiment from cosmic rays, it is located deep underground in a specially built facility at the Baksan Neutrino Observatory in the northern Caucasus mountains of Russia. Nearly 100 measurements of the solar neutrino flux have been made during 1990-2000, and their combined result is a neutrino capture rate that is well below the prediction of the Standard Solar Model. The significant suppression of the solar neutrino flux that SAGE and other solar neutrino experiments have observed gives a strong indication for the existence of neutrino oscillations. [copied from the SAGE homepage at http://ewi.npl.washington.edu/SAGE/SAGE.html

  2. Outphasing Control of Gallium Nitride based Very High Frequency Resonant Converters

    E-Print Network [OSTI]

    Madsen, Mickey P.

    In this paper an outphasing modulation control method suitable for line regulation of very high frequency resonant converters is described.

  3. Gallium arsenide digital integrated circuits for controlling SLAC CW-RF systems

    SciTech Connect (OSTI)

    Ronan, M.T.; Lee, K.L.; Corredoura, P.; Judkins, J.G.

    1988-10-01

    In order to fill the PEP and SPEAR storage rings with beams from the SLC linac and damping rings, precise control of the linac subharmonic buncher and the damping ring RF is required. Recently several companies have developed resettable GaAs master/slave D-type flip-flops which are capable of operating at frequencies of 3 GHz and higher. Using these digital devices as frequency dividers, one can phase shift the SLAC CW-RF systems to optimize the timing for filling the storage rings. We have evaluated the performance of integrated circuits from two vendors for our particular application. Using microstrip circuit techniques, we have built and operated in the accelerator several chassis to synchronize a reset signal from the storage rings to the SLAC 2.856 GHz RF and to phase shift divide-by-four and divide-by-sixteen frequency dividers to the nearest 350 psec bucket required for filling. 4 refs., 4 figs., 2 tabs.

  4. Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits

    E-Print Network [OSTI]

    Bickford, Justin Robert

    2008-01-01

    S. Zhang, Silicides, Handbook of semiconductor manufacturingchapter 10, Handbook of Semiconductor Manufacturing

  5. Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits

    E-Print Network [OSTI]

    Bickford, Justin Robert

    2008-01-01

    F. Schaffler, Properties of Advanced Semiconductor Materials1989). Properties of Advanced Semiconductor Materials: GaN,semiconductor devices worsen. In-depth explanations of how material properties

  6. Surface Preparation of Gallium Nitride for Atomic Layer Deposition of Aluminum Oxide /

    E-Print Network [OSTI]

    Kerr, Amanda J.

    2014-01-01

    Nitride for Atomic Layer Deposition of Aluminum Oxide AForce Microscopy Atomic Layer Deposition Capacitance-VoltageSurfaces for Atomic Layer Deposition of Aluminum Oxide” x

  7. Structural, electronic, and dynamical properties of amorphous gallium arsenide: a comparison between two topological models

    E-Print Network [OSTI]

    Lewis, Laurent J.

    corresponds to the traditional, amorphous, Polk­type, network, randomly decorated with Ga and As atoms­ work is energetically favored over Polk, but that most properties are little affected their vertices. Based on these ideas, the mechanical CRN constructed by Polk was found to provide a very

  8. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D?=0.53(×2.1±1) cm² s?¹ that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  9. Quantum wells on indium gallium arsenic compositionally graded buffers realized by molecular beam epitaxy

    E-Print Network [OSTI]

    Choy, Henry Kwong Hin, 1974-

    2005-01-01

    For a long time, there has been a desire to extend the emission wavelength of GaAs-based quantum well lasers, with the aim of eventually replacing InP with GaAs as the substrate of choice for communication applications. ...

  10. Efficiency Optimization for a Power Factor Correction (PFC) Rectifier with Gallium Nitride

    E-Print Network [OSTI]

    Paderborn, Universität

    and utilized to identify the best design by numeric optimization of switching frequency, number of turns) and to increase the power density. Despite of the comparable low switching losses of GaN transistors circuit that achieves negative voltage at switch-off with a unipolar power supply is described in Section

  11. Accelerated Testing of HT-9 with Zirconia Coatings Containing Gallium using Raman Spectroscopy and XPS

    SciTech Connect (OSTI)

    Windisch, Charles F.; Henager, Charles H.; Engelhard, Mark H.; Bennett, Wendy D.

    2009-12-01

    Laser Raman spectroscopy and x-ray photoelectron spectroscopy were used to study the evolution of composition of oxide films in the presence of zirconia coatings on miniature HT-9 alloy specimens subjected to elevated temperature in air. The experiments expanded on previous efforts to develop a quick-screening technique for candidate alloys for cladding materials (HT-9) and actinide-based mixed oxide fuel mixtures (represented by the zirconia coating) by investigating the effect of both coating composition and alloy pretreatment conditions on the high temperature reactions. In particular, the presence of the element Ga (a potential impurity in mixed oxide fuel) in the initial zirconia coating was found to accelerate the rate of oxide growth relative to that of yttria-stabilized zirconia studied previously. In addition, HT-9 samples that were subjected to different thermal pretreatments gave different results. The results suggest that the presence of Ga in a mixed oxide fuel will enhance the corrosion of HT-9 cladding under the conditions of this study, although the extent of enhancement is influenced by thermal pretreatment of the cladding material. The results also demonstrate the need to combine Raman spectroscopy with other techniques, particularly photoelectron spectroscopy, for optimizing composition and/or fabrication conditions of both cladding and oxide fuels for advanced nuclear reactors.

  12. Triple?crystal x?ray diffraction analysis of reactive ion etched gallium arsenide

    E-Print Network [OSTI]

    Wang, V. S.; Matyi, R. J.; Nordheden, Karen J.

    1994-01-01

    improvement was observed. Furthermore, we have shown that this reduction in process?induced surfacestructural damage is not due merely to the removal of residual chemical?mechanical polishing damage....

  13. Process development for the fabrication of monolithic optoelectronic resonators on gallium arsenide substrates 

    E-Print Network [OSTI]

    Fairchild, Brock Wilson

    1990-01-01

    performance. The resonating structures were constructed on semi-insulating GaAs, doped GaAs, epitaxially-grown doped GaAs on GaAs and heterostructure Al- GaAs/GaAs/AlGaAs/GaAs substrates. A thin layer of Au-Ge and Ni was deposited on the substrates as a... loss microwave structure, were electroplated on the uncovered regions of the Au-Ge and Ni. After photoresist removal, the Au-Ge and Ni layers were removed from the unwanted regions. A backside metal was deposited and the sample was annealed. The four...

  14. Fabrication of an optically driven 10 GHz ring resonator on a gallium arsenide substrate 

    E-Print Network [OSTI]

    McGregor, Douglas Scott

    1989-01-01

    of the optically excited output power from ring 3 at the first three harmonics revealed microwave power levels of -43 dBm, -52 dBm, and -65 dBm with loaded Q values ol' 53. 5, 75. 43, and 103. 0, respectively. ACKNOWLEDGMENTS I would like to acknowledge.... Preliminary Plating Experiments D. Ring Resonator Fabrication Process . E. Ohmic Contact Fabrication and Analysis F. Design and Analysis of the Substrate Holder G. Testing Apparatus and Procedure for the Microwave Characteristics of the Ring Resonators H...

  15. The Hall mobility measurement of Liquid Phase Epitaxy grown aluminum gallium arsenide 

    E-Print Network [OSTI]

    Choi, Young-Shig

    1986-01-01

    ' Committee) 8~zP~ Donald L. Parker (Member) . / ! "Yp Thomas W. Adair 111 (Member) Ran al L. Geif;er ( i vl e &n h p. I' ) . ). W. Howze (II& ad of' D& partrnenf. ) D&'c&" rnb& r f!)f&(i ABSTRACT The Hall Mobility Measurement ol' Liquid Phase... keep unwanted irnpurit, ies in solut. ion. They & a. n also be made very thin, i. e. . a, few microns. 'I'hese factors make LPE important &o the bet&&rostructur& devi& e for the growth ol' non-silicon based materials, which ar& used to fabricat& a...

  16. Sandia Energy - BES Web Highlight: Single-mode gallium nitride nanowire

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust, High-Throughput Analysis ofSample SULI ProgramPhysical Societylasers BES Web

  17. Gallium Safety in the Laboratory INEEL/CON-03-00078

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield MunicipalTechnical Report:Speeding accessby aLED Street LightingFrom the Building to PROGWM REVIEWThis

  18. High Quality, Low Cost Bulk Gallium Nitride Substrates Grown by the Electrochemical Solution Growth Method

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergyTher i nA Guide to TappingWORK BREAKDOWNEnergy howBuilding America TopofSeacrist,

  19. High-Quality, Low-Cost Bulk Gallium Nitride Substrates | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12,ExecutiveFinancing

  20. LIFE CYCLE INVENTORY ANALYSIS IN THE PRODUCTION OF METALS USED IN PHOTOVOLTAICS.

    SciTech Connect (OSTI)

    FTHENAKIS,V.M.; KIM, H.C.; WANG, W.

    2007-03-30

    Material flows and emissions in all the stages of production of zinc, copper, aluminum, cadmium, indium, germanium, gallium, selenium, tellurium, and molybdenum were investigated. These metals are used selectively in the manufacture of solar cells, and emission and energy factors in their production are used in the Life Cycle Analysis (LCA) of photovoltaics. Significant changes have occurred in the production and associated emissions for these metals over the last 10 years, which are not described in the LCA databases. Furthermore, emission and energy factors for several of the by-products of the base metal production were lacking. This report aims in updating the life-cycle inventories associated with the production of the base metals (Zn, Cu, Al, Mo) and in defining the emission and energy allocations for the minor metals (Cd, In, Ge, Se, Te and Ga) used in photovoltaics.

  1. Researchers develop electrodeposition process to deposit coatings on substrates, eliminate the expensive physical vapor

    E-Print Network [OSTI]

    the expensive physical vapor deposition step, and improve device quality. CuIn1-xGaxSe2 (CIGS) solar cells have energy gap and allows use of thin layers (1-2 µm) of active material. CIGS solar cells are also known vacuum and non-vacuum technologies. Thin-film solar cell devices based on PVD CIGS have demonstrated

  2. Proc. of the 24th IEEE Photovoltaic Specialists Conference (IEEE, New York, 1995), pp. 164-167. SODIUM DIFFUSION, SELENIZATION, AND MICROSTRUCTURAL EFFECTS

    E-Print Network [OSTI]

    Scofield, John H.

    to our usual solar cell processing stages, including the high-temperature deposition of CIS and CIGS by the "best" polycrystalline thin film copper indium diselenide (CIGS) based small-area solar cells has risen their implications for CIS and CIGS solar cell fabrication. AS-DEPOSITED FILMS Sample Fabrication Films were sputter

  3. In situ investigation of the selenization kinetics of CuGa precursors using time-resolved high-temperature X-ray diffraction

    E-Print Network [OSTI]

    Anderson, Timothy J.

    (CIGS) is a proven absorber material for high efficiency thin film solar cells with reported conversion- solar cell is the tandem cell structure that uses the high efficiency In-rich CIGS device as the bottom cell in a CIGS tandem solar cell structure [2­4]. Recently, a record-efficiency of 10.23% for a surface

  4. innovati nNREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells

    E-Print Network [OSTI]

    CIGS solar cells. Their use of the high-temperature glass, designed by SCHOTT AG, allows higher fabrication temperatures, opening the door to new CIGS solar cells employing light-absorbing materials are plentiful. In contrast, CIGS solar cells with wide bandgaps can function at higher efficiencies regardless

  5. Toward microscale Cu,,In,Ga...Se2 solar cells for efficient conversion and optimized material usage: Theoretical evaluation

    E-Print Network [OSTI]

    Boyer, Edmond

    develop a model to predict the performances of microscale Cu In,Ga Se2 CIGS solar cells under concentrated limiting factor for concentration on CIGS solar cells. This model can be used to extract the value associated with the operation of microscale CIGS solar cells are studied. The optimum concentration ratio

  6. COMPARISON OF TRAP STATES BETWEEN CIGSS/CdS/ZnO AND Cd PE CIGSS/ZnO CELLS P.K. Johnson, A.O. Pudov, J.R. Sites

    E-Print Network [OSTI]

    Sites, James R.

    (CIGS) thin films were treated in Cd solutions (Cd PE treatment) yielded solar cells with efficiencies surface can produce a cell comparable to the best CdS/CIGS cells. We extend this work to include CIGSS Defects - 3 1. INTRODUCTION Polycrystalline CIGS thin film photovoltaic cells are known for their high

  7. This content has been downloaded from IOPscience. Please scroll down to see the full text. Download details

    E-Print Network [OSTI]

    Napp, Nils

    absorbers. In this study, the effects of a graded bandgap profile on the cell performance of a CIGS solar The Japan Society of Applied Physics 1. Introduction Cu(In,Ga)Se2 (CIGS) solar cells have demonstrated a high conversion efficiency of over 20%.1) Also, the CIGS solar cells have many advantages

  8. Int'l PVSEC -121 Technical Digest of the International PVSEC-14, Bangkok, Thailand, 2004

    E-Print Network [OSTI]

    Romeo, Alessandro

    Properties of CIGS solar cells developed with evaporated II-VI buffer layers A. Romeo, R. Gysel, S. Buzzi, D in Voc and FF are measured. 1. Introduction High efficiency CIGS solar cells have been obtained. We present a comparison of the CIGS based solar cells made with CBD, PVD-CdS and PVD-Zn-based buffer

  9. Silicon Oxynitride Thin Film Barriers for PV Packaging (Poster)

    SciTech Connect (OSTI)

    del Cueto, J. A.; Glick, S. H.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2006-10-03

    Dielectric, adhesion-promoting, moisture barriers comprised of silicon oxynitride thin film materials (SiOxNy with various material stoichiometric compositions x,y) were applied to: 1) bare and pre-coated soda-lime silicate glass (coated with transparent conductive oxide SnO2:F and/or aluminum), and polymer substrates (polyethylene terephthalate, PET, or polyethylene napthalate, PEN); plus 2) pre- deposited photovoltaic (PV) cells and mini-modules consisting of amorphous silicon (a-Si) and copper indium gallium diselenide (CIGS) thin-film PV technologies. We used plasma enhanced chemical vapor deposition (PECVD) process with dilute silane, nitrogen, and nitrous oxide/oxygen gas mixtures in a low-power (< or = 10 milliW per cm2) RF discharge at ~ 0.2 Torr pressure, and low substrate temperatures < or = 100(degrees)C, over deposition areas ~ 1000 cm2. Barrier properties of the resulting PV cells and coated-glass packaging structures were studied with subsequent stressing in damp-heat exposure at 85(degrees)C/85% RH. Preliminary results on PV cells and coated glass indicate the palpable benefits of the barriers in mitigating moisture intrusion and degradation of the underlying structures using SiOxNy coatings with thicknesses in the range of 100-200 nm.

  10. Molecular Mechanisms of Selenium Tolerance and Hyperaccumulation in Stanleya pinnata1[W][OA

    E-Print Network [OSTI]

    Technology, Fresno, California 93740 (J.L.F.); Biology Department (J.L.F., C.F.Q., J.J.C., D.V.H., E.A.H.P.-S.) and Department of Horticulture and Landscape Architecture (C.S.), Colorado State University, Fort Collins, chlorosis and necrosis, impaired photosynthesis, and high levels of reactive oxygen species. Levels

  11. Selenium Partitioning and Food-Chain Transfer at the Salton Sea

    E-Print Network [OSTI]

    Tobin, Jennifer Marie

    2011-01-01

    drains and the Whitewater, Alamo, and New Rivers to supplyponds supplied by a mix of Alamo River and Sea water. Pond 1water and 21.4 mg/kg dw using Alamo River water, and Se

  12. NEW DETECTIONS OF ARSENIC, SELENIUM, AND OTHER HEAVY ELEMENTS IN TWO METAL-POOR STARS

    E-Print Network [OSTI]

    Roederer, Ian U.

    We use the Space Telescope Imaging Spectrograph on board the Hubble Space Telescope to obtain new high-quality spectra covering the 1900 ?? ? 2360 Å wavelength range for two metal-poor stars, HD 108317 and HD 128279. We ...

  13. Selenium Partitioning and Food-Chain Transfer at the Salton Sea

    E-Print Network [OSTI]

    Tobin, Jennifer Marie

    2011-01-01

    Conservation Habitat (SCH) ponds at the south end of the Seaselenium (Se) in the SCH ponds to levels potentially toxicpotential Se risk in SCH ponds, this study employed a novel

  14. Distribution coefficient values describing iodine, neptunium, selenium, technetium, and uranium sorption to Hanford sediments. Supplement 1

    SciTech Connect (OSTI)

    Kaplan, D.I.; Seme, R.J.

    1995-03-01

    Burial of vitrified low-level waste (LLW) in the vadose zone of the Hanford Site is being considered as a long-term disposal option. Regulations dealing with LLW disposal require that performance assessment (PA) analyses be conducted. Preliminary modeling efforts for the Hanford Site LLW PA were conducted to evaluate the potential health risk of a number of radionuclides, including Ac, Am, C, Ce, Cm, Co, Cs, Eu, 1, Nb, Ni, Np, Pa, Pb, Pu, Ra, Ru, Se, Sn, Sr, Tc, Th, U, and Zr (Piepho et al. 1994). The radionuclides, {sup 129}I, {sup 237}Np, {sup 79}Se, {sup 99}Tc, and {sup 234,235,238}U, were identified as posing the greatest potential health hazard. It was also determined that the outcome of these simulations were very sensitive to the parameter describing the extent to which radionuclides sorbed to the subsurface matrix, described as a distribution coefficient (K{sub d}). The distribution coefficient is a ratio of the radionuclide concentration associated with the solid phase to that in the liquid phase. The literature-derived K{sub d} values used in these simulations were conservative, i.e., lowest values within the range of reasonable values used to provide an estimate of the maximum health threat. Thus, these preliminary modeling results reflect a conservative estimate rather than a best estimate of what is likely to occur. The potential problem with providing only a conservative estimate is that it may mislead us into directing resources to resolve nonexisting problems.

  15. The oxidative addition of simple selenium molecules to an unsaturated iridium (I) compound 

    E-Print Network [OSTI]

    Hsieh, Mel-Lin Mary

    1970-01-01

    . It was used without further purification. Triphenylphosphine, practical grade, was purchased from 11 the Metal and Thermit Corp. and was used following recrystallisa- tion from hot 95? alcohol. Aluminum, U. S. P. powder, was purchased from...

  16. Removal of Selenium from Wastewater using ZVI and Hybrid ZVI/Iron Oxide Process 

    E-Print Network [OSTI]

    Yang, Zhen

    2012-12-20

    CN- treatment. Zero-valent iron (ZVI) technology, with some successes in remediating toxic-metal contaminated groundwater remediation, emerges as a potential solution for addressing SeCN- problem. In this study, bench scale tests were conducted to investigate...

  17. Selenium Accumulation in Brassicaceae Plant Species and its Biotransfer to Insect Pollinators

    E-Print Network [OSTI]

    Hladun, Kristen

    2012-01-01

    from plants growing in fly ash from coal-burning electricalfrom New England aster growing in fly ash from coal-burningby bees foraging on fly ash-grown plants. Bull Environ

  18. Sorption of Arsenic, Mercury, Selenium onto Nanostructured Adsorbent Media and Stabilization via Surface Reactions 

    E-Print Network [OSTI]

    Han, Dong Suk

    2011-02-22

    as pH increased. In addition, a surface complexation model (SCM) based on the diffuse layer model (DLM) was used to predict arsenic adsorption envelopes by NTAs under various environmental conditions. The SCM for As(III, V) adsorption by NTAs...

  19. Growing the Tool Box for Medical Imaging: The Selenium-72/Arsenic...

    Office of Science (SC) Website

    methodologies of making self-contained delivery systems for the radioisotope 72As for future clinical applications. The Impact Positron emission tomography (PET) is a powerful...

  20. Final Technical Report: Hawaii Hydrogen Center for Development and Deployment of Distributed Energy Systems

    SciTech Connect (OSTI)

    Rocheleau, Richard E.

    2008-09-30

    Hydrogen power park experiments in Hawai‘i produced real-world data on the performance of commercialized electrochemical components and power systems integrating renewable and hydrogen technologies. By analyzing the different losses associated with the various equipment items involved, this work identifies the different improvements necessary to increase the viability of these technologies for commercial deployment. The stand-alone power system installed at Kahua Ranch on the Big Island of Hawaii required the development of the necessary tools to connect, manage and monitor such a system. It also helped the electrolyzer supplier to adapt its unit to the stand-alone power system application. Hydrogen fuel purity assessments conducted at the Hawai‘i Natural Energy Institute (HNEI) fuel cell test facility yielded additional knowledge regarding fuel cell performance degradation due to exposure to several different fuel contaminants. In addition, a novel fitting strategy was developed to permit accurate separation of the degradation of fuel cell performance due to fuel impurities from other losses. A specific standard MEA and a standard flow field were selected for use in future small-scale fuel cell experiments. Renewable hydrogen production research was conducted using photoelectrochemical (PEC) devices, hydrogen production from biomass, and biohydrogen analysis. PEC device activities explored novel configurations of ‘traditional’ photovoltaic materials for application in high-efficiency photoelectrolysis for solar hydrogen production. The model systems investigated involved combinations of copper-indium-gallium-diselenide (CIGS) and hydrogenated amorphous silicon (a-Si:H). A key result of this work was the establishment of a robust “three-stage” fabrication process at HNEI for high-efficiency CIGS thin film solar cells. The other key accomplishment was the development of models, designs and prototypes of novel ‘four-terminal’ devices integrating high-efficiency CIGS and a-Si:H with operating features compatible with high-efficiency photoelectrochemical (PEC) water-splitting. The objective of one activity under the hydrogen production from biomass task was to conduct parametric testing of the Pearson gasifier and to determine the effects of gasifier operating conditions on the gas yields and quality. The hydrogen yield from this gasifier was evaluated in a parametric test series over a range of residence times from 0.8 to 2.2 seconds. H2 concentrations as high as 55% (volume) were measured in the product gas at the longer residence times and this corresponds to a hydrogen yield of 90 kg per tonne of bagasse without gas upgrading. The objective of another activity was to develop hot gas clean-up capabilities for the HNEI gasifier test facility to support hydrogen-from-biomass research. The product gas stream at the outlet of the hot gas filter was characterized for concentrations of permanent gas species and contaminants. Biomass feedstock processing activity included a preliminary investigation into methods for processing sugar cane trash at the Puunene Sugar Factory on the island of Maui, Hawaii. The objective of the investigation was to explore treatment methods that would enable the successful use of cane trash as fuel for the production of hydrogen via gasification. Analyses were completed for the technical and economic feasibility of producing biofuel from photosynthetic marine microbes on a commercial scale. Results included estimates for total costs, energy efficiency, and return on investment. The biohydrogen team undertook a comprehensive review of the field and came to what is considered a realistic conclusion. To summarize, continued research is recommended in the fundamentals of the science related to genetic engineering and specific topics to cover knowledge gaps. In the meantime, the team also advocates continued development of related processes which can be linked to pollution control and other real world applications. The extra revenues hydrogen can provide to these multi-product systems can

  1. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

    DOE Patents [OSTI]

    Mascarenhas, Angelo

    2015-07-07

    Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  2. Reflectance-difference spectroscopy of mixed arsenic-rich phases of gallium arsenide ,,001... M. J. Begarney,1

    E-Print Network [OSTI]

    Li, Lian

    rough quali- tative agreement with the experimental data. Based on more recent, first, University of California, Los Angeles, California 90095 2 Department of Physics and Laboratory for Surface closely match the RDS data, discrepancies in the energies and mag- nitudes of spectral features remain

  3. Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

    DOE Patents [OSTI]

    Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

    2014-11-04

    Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

  4. DESIGN AND ANALYSIS OF AN INTEGRATED PULSE MODULATED S-BAND POWER AMPLIFIER IN GALLIUM NITRIDE PROCESS

    SciTech Connect (OSTI)

    STEVE SEDLOCK

    2012-04-04

    The design of power amplifiers in any semi-conductor process is not a trivia exercise and it is often encountered that the simulated solution is qualitatively different than the results obtained. Phenomena such as oscillation occurring either in-band or out of band and sometimes at subharmonic intervals, continuous spectrum noticed in some frequency bands, often referred to as chaos, and jumps and hysteresis effects can all be encountered and render a design useless. All of these problems might have been identified through a more rigorous approach to stability analysis. Designing for stability is probably the one area of amplifier design that receives the least amount of attention but incurs the most catastrophic of effects if it is not performed properly. Other parameters such as gain, power output, frequency response and even matching may suitable mitigation paths. But the lack of stability in an amplifier has no mitigating path. In addition to of loss of the design completely there are the increased production cycle costs, costs involved with investigating and resolving the problem and the costs involved with schedule slips or delays resulting from it. The Linville or Rollett stability criteria that many microwave engineers follow and rely exclusively on is not sufficient by itself to ensure a stable and robust design. It will be shown that the universal belief that unconditional stability is obtained through an analysis of the scattering matrix S to determine if 1 and |{Delta}{sub S}| < 1 is only part of the procedure and other tools must be used to validate the criteria. The research shown contributes to the state of the art by developing a more thorough stability design technique for designing amplifiers of any class, whether that be current mode or switch mode, than is currently undertaken with the goal of obtaining first pass design success.

  5. Journal of Crystal Growth 310 (2008) 579583 Red shift in the photoluminescence of indium gallium arsenide nitride

    E-Print Network [OSTI]

    Hicks, Robert F.

    2008-01-01

    in multi-junction solar cells, and in long-wavelength solid- state lasers and detectors [2­4]. Nonetheless

  6. PROJECT PROFILE: 2D Materials for Low Cost Epitaxial Growth of Single Sun Gallium Arsenide (GaAs) Photovoltaics

    Office of Energy Efficiency and Renewable Energy (EERE)

    Low-cost III-V cells will result in a breakthrough in photovoltaic (PV) market by enabling lower LCOE. The project will develop low-cost substrates to template the growth of GaAs.

  7. The radiation bio-effects of gallum-72 on leukemic cells via a gallium-transferrin complex 

    E-Print Network [OSTI]

    Forbes, Christen Douglas

    1999-01-01

    Improved methods for treatment of leukemia would be advantageous for patients and the medical community. This thesis reports results of a study of the cytotoxicity of radiolabeled transferrin in cultured leukemic cells. K-562 cells, from...

  8. An experimental study of the solubility of Gallium(III) oxide in HCl-bearing water vapour

    E-Print Network [OSTI]

    at 200 °C at a pH of $4. The values are very similar to those estimated from data for geothermal wells. INTRODUCTION It has been long known that the gaseous transport of weakly volatile compounds is greatly enhanced-hydrothermal systems are dominated by low-density fluids and, from analyses of vapour inclusions, that such fluids can

  9. The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

    SciTech Connect (OSTI)

    Yang, Tsung-Jui; Wu, Yuh-Renn; Shivaraman, Ravi; Speck, James S.

    2014-09-21

    In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.

  10. The Effects of Non-Uniform Electronic Properties on Thin Film Photovoltaics

    E-Print Network [OSTI]

    Brown, Gregory Ferguson

    2011-01-01

    1.3:  Maximum  solar  cell  efficiency  as  a  function  made  in  CIGS  solar  cell   efficiencies  with  the  The  highest   efficiency  solar  cells  are  currently  

  11. Polycrystalline Thin Film Solar Cell Technologies: Preprint

    SciTech Connect (OSTI)

    Ullal, H. S.

    2008-12-01

    Rapid progress is being made by CdTe and CIGS-based thin-film PV technologies in entering commercial markets.

  12. Design, automation, and test for low-power and reliable flexible electronics

    E-Print Network [OSTI]

    Huang, TC; Huang, JL; Cheng, KT

    2015-01-01

    improvement. Flexible Photovoltaics Solar cells and solarand organic solar Flexible Photovoltaics Figure 7.9: Theof a CIGS solar cell Flexible Photovoltaics (Mo) is selected

  13. THSE DE DOCTORAT Spcialit Physique

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    -thin GaAs and CIGS solar cells soutenue le 18 Décembre 2013 Composition du jury : M. PELOUARD Jean-Luc LPN

  14. ScanningTunneling Luminescence of Grain Boundaries in Cu(In,Ga)Se2

    SciTech Connect (OSTI)

    Romero, M. J.; Jiang, C.-S.; Al-Jassim, M. M.; Noufi, R.

    2005-01-01

    At the Laboratory, photon emission in semiconductors has been mapped in the nanoscale using scanning tunneling microscopy (STM). In this Solar Program Review Meeting, we report on the latest results obtained in Cu(In,Ga)Se2 (CIGS) thin films by this adapted STM. Scanning tunneling luminescence (STL) spectroscopy suggests that photons are emitted near the surface of CIGS. STL is excited either by (1) diffusion of tunneling electrons and subsequent recombination with available holes in CIGS or (2) impact ionization by hot electrons. Which process becomes predominant depends on the voltage applied to the STM tip. Photon mapping shows electronically active, extended defects near the surface of CIGS thin films.

  15. Molecular solution processing of metal chalcogenide thin film solar cells

    E-Print Network [OSTI]

    Yang, Wenbing

    2013-01-01

    for further improvement on CZTS solar cells efficiency.improvement. Figure 6.1 Efficiency progress for hydrazine solution processing CIGS and CZTS thin film solar cells

  16. Novel Materials Development for Polycrystalline Thin-Film Solar Cells: Final Subcontract Report, 26 July 2004--15 June 2008

    SciTech Connect (OSTI)

    Keszler, D. A.; Wager, J. F.

    2008-11-01

    Focus on player interfacial assessment using Schottky barrier and heterojunction theory, and analysis of p-windows for CIGS and CdTe cells.

  17. Preparation, Characterization, and Device Applications of Zinc Tin Nitride and Zinc Tin Oxynitride Materials

    E-Print Network [OSTI]

    Ye, Shenglin

    2015-01-01

    methods on CIGS thin film solar cells with a Na-free1-x Ga x N-based thin film solar cells can reach 33%, which

  18. On the Mass Eigenstate Composition of the 8B Neutrinos from the Sun

    E-Print Network [OSTI]

    A. Kopylov; V. Petukhov

    2007-04-19

    The present data of gallium experiments provide indirectly the only experimental limit on the fraction of $\

  19. Nanoscale metals and semiconductors for the storage of solar energy in chemical bonds

    E-Print Network [OSTI]

    Manthiram, Karthish

    2015-01-01

    hydrogen evolution reaction overpotentials and adsorbate binding energies, such as zinc, gallium, palladium,

  20. Method for the chemical separation of GE-68 from its daughter Ga-68

    DOE Patents [OSTI]

    Fitzsimmons, Jonathan M.; Atcher, Robert W.

    2010-06-01

    The present invention is directed to a generator apparatus for separating a daughter gallium-68 radioisotope substantially free of impurities from a parent gernanium-68 radioisotope, including a first resin-containing column containing parent gernanium-68 radioisotope and daughter gallium-68 radioisotope, a source of first eluent connected to said first resin-containing column for separating daughter gallium-68 radioisotope from the first resin-containing column, said first eluent including citrate whereby the separated gallium is in the form of gallium citrate, a mixing space connected to said first resin-containing column for admixing a source of hydrochloric acid with said separated gallium citrate whereby gallium citrate is converted to gallium tetrachloride, a second resin-containing column for retention of gallium-68 tetrachloride, and, a source of second eluent connected to said second resin-containing column for eluting the daughter gallium-68 radioisotope from said second resin-containing column.

  1. Solar panels are cost intensive, have limitations with respect to

    E-Print Network [OSTI]

    Langendoen, Koen

    Solar panels are cost intensive, have limitations with respect to where they can be integrated of the window, integrated in the window frames, strip-shaped CIGS PV solar cells convert the light the CIGS PV solar cells in the form of strips at the edges of the window in the window frame. These solar

  2. Optimization of chemical bath deposited CdS thin films using nitrilotriacetic acid as a complexing agent

    E-Print Network [OSTI]

    Chow, Lee

    thin film solar cells based on CdTe or CIGS [1,2]. CdS has also been used in other applications. The highest efficiencies reported for both CdTe and CIGS solar cells were obtained when chemical bath is known to greatly enhance the performance of CdS windows used in the above mentioned solar cells

  3. RealReal heterojunctionsheterojunctions Schottky barrier current

    E-Print Network [OSTI]

    Pulfrey, David L.

    -EFFICIENCY CDTE AND CIGS THIN-FILM SOLAR CELLS: HIGHLIGHTS AND CHALLENGES. National Renewable Energy Laboratory1 RealReal heterojunctionsheterojunctions LECTURE 9 · Schottky barrier current · CdS/CIGS · Energy is the forward-bias current? #12;33 HeterostructureHeterostructure, thin film, cells: a lower, thin film, cells

  4. Hole transport and doping states in epitaxial CuIn1 xGaxSe2 David J. Schroeder

    E-Print Network [OSTI]

    Rockett, Angus

    . They have been shown to yield solar cells with efficiencies greater than 17%, and over time films of group III-rich CuIn1 xGaxSe2 CIGS . The films were produced using a hybrid sputtering interest in renewable energy sources such as photovoltaic devices. CuIn1 xGaxSe2 CIGS /CdS hetero- junction

  5. "ECS Transactions -Boston, MA" Volume 16, "Photovoltaics for the 21st Century 7" to be published in September, 2011

    E-Print Network [OSTI]

    Dagenais, Mario

    -absorption coefficient (>104 cm-1 ) for solar radiation (1). Until now, CIGS-based thin film solar cells of the promising methods for the manufacture of CIGS solar cells due to its lower cost, excellent compositional for high-efficiency thin film solar cells due to its favorable band gap (1.04~1.68 eV) and high

  6. Z .Thin Solid Films 372 2000 212 217 Z .Na in selenized Cu In,Ga Se on Na-containing and Na-free2

    E-Print Network [OSTI]

    Rockett, Angus

    of the substrate glass on standard Z . Z .production Cu In Ga Se CIGS -based solar cells fabricated by selenization; Selenides2 1. Introduction Z .Production of large quantities of Cu In Ga Se1yx x 2 Z . Z .CIGS -based solar solar cell performance. Impurities, both U Corresponding author. Tel.: q1-217-333-0417; fax: q1

  7. Microscale solar cells for high concentration on polycrystalline Cu(In,Ga)Se2 Myriam Paire,1,2,3,4,a)

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    thin film solar cell material,7 and efficiencies over 20% were achieved recently. We study CIGS to decrease with illumination. The device described in this letter is a glass/Mo/CIGS/ CdS/ZnO solar cellMicroscale solar cells for high concentration on polycrystalline Cu(In,Ga)Se2 thin films Myriam

  8. Crystal and electronic band structure of Cu2ZnSnX4 ,,X=S and Se... photovoltaic absorbers: First-principles insights

    E-Print Network [OSTI]

    Gong, Xingao

    components, and the band gap is usually not optimal for high efficiency CIGS solar cells. Currently, designing and synthesizing novel, high-efficiency, and low cost solar cell absorbers to replace CIGS has.1063/1.3074499 An ideal thin-film solar cell absorber material should have a direct band gap around 1.3­1.5 e

  9. Published on Web Date: January 18, 2011 r 2011 American Chemical Society 212 DOI: 10.1021/jz101565j |J. Phys. Chem. Lett. 2011, 2, 212217

    E-Print Network [OSTI]

    Goddard III, William A.

    compound of the promising CIGS Cu(InxGa1-x)Se2 solar devices, that LDA and GGA obtain gaps of 0.0-0.01 e in these studies was to study the properties of the Cu(InxGa1-x)Se2 (CIGS) class ofsolar cells, pioneered by NREL

  10. Thermodynamics, Entropy, Information and the Efficiency of Solar Cells

    E-Print Network [OSTI]

    Abrams, Zeev R.

    2012-01-01

    CIGS, so the addition of the dc layer would not alter the material choice for a solar cell.solar cell, the use of GaAs has recently become feasible due to scalable manufacturing techniques, and compound materials such as CIGS (

  11. Degradation of transparent conductive oxides; Mechanistic insights across configurations and exposures

    E-Print Network [OSTI]

    Rollins, Andrew M.

    been reported in thin film silicon solar modules123 , CIGS modules456 and OPV technologies78910 to occur across a number of optoelectronic devices1214 . In significantly degraded CIGS cells, replacing applications, durability concerns arise. The cost and reliability of solar power are often cited as a primary

  12. Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealing

    E-Print Network [OSTI]

    properties to further improve the performance of thin-film solar cells using earth- abundant and non) is one of the most reliable materials used in thin-film solar cells, but currently the most efficient CIGS-based solar cells use CdS,1,2 a toxic material, as an n-type buffer layer between the p-type CIGS

  13. Characterization of Damp-Heat Degradation of CuInGaSe2 Solar Cell Components and Devices by (Electrochemical) Impedance Spectroscopy: Preprint

    SciTech Connect (OSTI)

    Pern, F. J. J.; Noufi, R.

    2011-09-01

    This work evaluated the capability of (electrochemical) impedance spectroscopy (IS, or ECIS as used here) to monitor damp heat (DH) stability of contact materials, CuInGaSe2 (CIGS) solar cell components, and devices. Cell characteristics and its variation of the CIGS devices were also examined by the ECIS.

  14. Final Report for Department of Energy/EERE (for public release)

    SciTech Connect (OSTI)

    Yi Cui

    2012-04-30

    Developing CIGS solar cells calls for the understanding of materials and processing in order to translate the record small efficiency to module and the strategy to produce thin cells for materials and processing saving. This project has exploited nanostructuring of CIG solar cells, including nanowires and nanotextured substrates. We showed that nanowires function as well-defined CIGS-CdS p-n junction for understanding the chemical fluctuation, defect formation interface and grain boundary behaviors and the effect of ion diffusion, which are important but complicated issues for solar cell fabrication. We have also demonstrated effective nanoscale photon management on nanotextured substrate to provide opportunity for thin CIGS solar cells. We also developed the scalable methods for producing such nanotextured substrates. The research output in this project helps advancing the CIGS solar cells and broadly other solar cell technologies in cost reduction per unit power.

  15. 6638 Journal of the American Chemical Society / 101:22 / October 24, I979 Selenium Stabilized Carbanions. Preparation of

    E-Print Network [OSTI]

    Reich, Hans J.

    into methyl phenyl sulfide increased the kinetic acidity by a factor of 22.4. A variety of @-hydroxyselenides)methane) to carbonyl compounds. These @-hydroxyselen- ides are converted to olefins on treatment with rnethanesulfonyl

  16. Ecosystem-scale Selenium Model for the San Francisco Bay-Delta Regional Ecosystem Restoration Implementation Plan

    E-Print Network [OSTI]

    Presser, Theresa S.; Luoma, Samuel N.

    2013-01-01

    significant impact and supplement environmental assessment,environmental impact statement and environmental impactenvironmental impact statement and environmental impact

  17. Cross-sectional transmission electron microscopy study of femtosecond laser-irradiated selenium-doped 'black' silicon

    E-Print Network [OSTI]

    Reading, Arthur H. (Arthur Henry)

    2009-01-01

    'Black silicon' refers to silicon that has been treated in a laser-ablation process to incorporate large amounts of chalcogen dopants. The material has been found to have greatly increased absorbance of visible and infared ...

  18. Selenium Fractionation and Cycling in the Intertidal Zone of the Carquinez Strait - October 1995 to December 1995

    E-Print Network [OSTI]

    Zawislanski, P.T.

    2010-01-01

    development of the pyrite Se extraction method, and 3)improvement of the extraction methods for elemental Se, 2)application of extraction methods to suspended particulate

  19. Quantification, Localization, and Speciation of Selenium in Seeds of Canola and Two Mustard Species Compared to Seed-Meals Produced

    E-Print Network [OSTI]

    and hydraulically pressed seed meals. Specifically, the concentrations of total Se were measured, the localization Compared to Seed-Meals Produced by Hydraulic Press Gary S. Banuelos,*,, Spencer S. Walse, Soo In Yang Service, U.S. Department of Agriculture, Parlier, California 93648, United States Center for Irrigation

  20. Ecosystem-scale Selenium Model for the San Francisco Bay-Delta Regional Ecosystem Restoration Implementation Plan

    E-Print Network [OSTI]

    Presser, Theresa S.; Luoma, Samuel N.

    2013-01-01

    experimental ponds. Water, Air, and Soil Pollution 62(1–2):Pollution [SFBRWQCB] California San Francisco Bay Regional Water

  1. Elevated blood selenium levels in the Brazilian Amazon Melanie Lemire a,d,*, Donna Mergler a,d

    E-Print Network [OSTI]

    Long, Bernard

    'environnement (CINBIOSE), Universite´ du Que´bec a` Montre´al, C.P. 8888, Succ. Centre-Ville, Montre´al, Que´bec, Canada H´al, 477 Pierre de Coubertin, Montre´al, Que´bec, Canada H1V 1B3 d Institut des sciences de l'environnement, Universite´ du Que´bec a` Montre´al, C.P. 8888, Succ. Centre-Ville, Montre´al, Que´bec, Canada H3C 3P8

  2. Ecosystem-scale Selenium Model for the San Francisco Bay-Delta Regional Ecosystem Restoration Implementation Plan

    E-Print Network [OSTI]

    Presser, Theresa S.; Luoma, Samuel N.

    2013-01-01

    clapper rail Delta: insect- based food webs location- and2008a). a b c Delta: insect-based food webs* dissolved Se KdFood webs illustrated for Delta inhabitants include aquatic insects

  3. Site Environmental Report for 2009, Volume I

    E-Print Network [OSTI]

    Lackner, Regina

    2010-01-01

    demand (COD) Magnesium Arsenic, cadmium, lead, selenium, and silver Mercury Cyanide COD Aluminum, copper,

  4. 4911 Central Ave Richmond, CA 94804 RMP Technical Review

    E-Print Network [OSTI]

    for Emerging Contaminants, Sources Pathways and Loadings, PCBs, Dioxin, Exposure and Effects, and Selenium met

  5. Photovoltaic Materials

    SciTech Connect (OSTI)

    Duty, C.; Angelini, J.; Armstrong, B.; Bennett, C.; Evans, B.; Jellison, G. E.; Joshi, P.; List, F.; Paranthaman, P.; Parish, C.; Wereszczak, A.

    2012-10-15

    The goal of the current project was to help make the US solar industry a world leader in the manufacture of thin film photovoltaics. The overall approach was to leverage ORNL’s unique characterization and processing technologies to gain a better understanding of the fundamental challenges for solar cell processing and apply that knowledge to targeted projects with industry members. ORNL has the capabilities in place and the expertise required to understand how basic material properties including defects, impurities, and grain boundaries affect the solar cell performance. ORNL also has unique processing capabilities to optimize the manufacturing process for fabrication of high efficiency and low cost solar cells. ORNL recently established the Center for Advanced Thin-film Systems (CATS), which contains a suite of optical and electrical characterization equipment specifically focused on solar cell research. Under this project, ORNL made these facilities available to industrial partners who were interested in pursuing collaborative research toward the improvement of their product or manufacturing process. Four specific projects were pursued with industrial partners: Global Solar Energy is a solar industry leader in full scale production manufacturing highly-efficient Copper Indium Gallium diSelenide (CIGS) thin film solar material, cells and products. ORNL worked with GSE to develop a scalable, non-vacuum, solution technique to deposit amorphous or nanocrystalline conducting barrier layers on untextured stainless steel substrates for fabricating high efficiency flexible CIGS PV. Ferro Corporation’s Electronic, Color and Glass Materials (“ECGM”) business unit is currently the world’s largest supplier of metallic contact materials in the crystalline solar cell marketplace. Ferro’s ECGM business unit has been the world's leading supplier of thick film metal pastes to the crystalline silicon PV industry for more than 30 years, and has had operational cells and modules in the field for 25 years. Under this project, Ferro leveraged world leading analytical capabilities at ORNL to characterize the paste-to-silicon interface microstructure and develop high efficiency next generation contact pastes. Ampulse Corporation is developing a revolutionary crystalline-silicon (c-Si) thin-film solar photovoltaic (PV) technology. Utilizing uniquely-textured substrates and buffer materials from the Oak Ridge National Laboratory (ORNL), and breakthroughs in Hot-Wire Chemical Vapor Deposition (HW-CVD) techniques in epitaxial silicon developed at the National Renewable Energy Laboratory (NREL), Ampulse is creating a solar technology that is tunable in silicon thickness, and hence in efficiency and economics, to meet the specific requirements of multiple solar PV applications. This project focused on the development of a high rate deposition process to deposit Si, Ge, and Si1-xGex films as an alternate to hot-wire CVD. Mossey Creek Solar is a start-up company with great expertise in the solar field. The primary interest is to create and preserve jobs in the solar sector by developing high-yield, low-cost, high-efficiency solar cells using MSC-patented and -proprietary technologies. The specific goal of this project was to produce large grain formation in thin, net-shape-thickness mc-Si wafers processed with high-purity silicon powder and ORNL's plasma arc lamp melting without introducing impurities that compromise absorption coefficient and carrier lifetime. As part of this project, ORNL also added specific pieces of equipment to enhance our ability to provide unique insight for the solar industry. These capabilities include a moisture barrier measurement system, a combined physical vapor deposition and sputtering system dedicated to cadmium-containing deposits, adeep level transient spectroscopy system useful for identifying defects, an integrating sphere photoluminescence system, and a high-speed ink jet printing system. These tools were combined with others to study the effect of defects on the performance of crystalline silicon and

  6. Thickness dependent structural, optical and electrical properties of CuIn{sub 0.8}Ga{sub 0.2}Se{sub 2} thin films deposited by pulsed laser deposition

    SciTech Connect (OSTI)

    Mishra, Pradeep K.; Prasad, J. N. [University Department of Physics, Ranchi University, Ranchi-834008 (India); Gautam, Yogendra K.; Jain, Ravish K.; Choudhary, A. K.; Chandra, Ramesh [Institute Instrumentation Centre, Indian Institute of Technology, Roorkee-247667 (India); Kumar, Ashwani [Institute Instrumentation Centre, Indian Institute of Technology, Roorkee-247667, India and Centre for Nanotechnology, Indian Institute of Technology, Roorkee-247667 (India)

    2014-01-28

    CuIn{sub 0.8}Ga{sub 0.2}Se{sub 2} (CIGS) polycrystalline thin films have been deposited on soda lime glass substrate at different deposition time by pulsed laser deposition. The effect of thickness on structural, surface morphological, optical and electrical properties of thin films were investigated by X-ray diffractometer (XRD), field emission scanning electron microscope (FE-SEM), atomic force microscopy (AFM), UV-Vis-NIR spectrophotometer and electrical measurement unit. XRD study reveals that all deposited films are polycrystalline in nature and have tetragonal phase of CIGS. Crystallinity of CIGS films has been found to improve with increase in thickness of CIGS films as evidenced by sharp XRD peaks for (112) orientation. Grain size and rms surface roughness of CIGS films have been found to be increased with increase in thickness. All the deposited CIGS films exhibit direct band gap semiconducting behaviour with ?10{sup 6} cm{sup ?1} absorption co-efficient. Optical band gap and resistivity of CIGS films have been found to decrease with increase in thickness.

  7. Formation of Porous Layers by Electrochemical Etching of Germanium and Gallium Arsenide for Cleave Engineered Layer Transfer (CELT) Application in High Efficiency Multi-Junction Solar Cells

    E-Print Network [OSTI]

    Fong, David Michael

    2012-01-01

    Application in High Efficiency Multi-Junction Solar Cells AApplication in High Efficiency Multi-Junction Solar Cells Bycost of high efficiency multi-junction solar cells through a

  8. Formation of Porous Layers by Electrochemical Etching of Germanium and Gallium Arsenide for Cleave Engineered Layer Transfer (CELT) Application in High Efficiency Multi-Junction Solar Cells

    E-Print Network [OSTI]

    Fong, David Michael

    2012-01-01

    Motivation Multi-junction (MJ) solar cells show particular promise as a future clean renewable energy

  9. Preparation of silicon substrates for gallium-arsenide solar cells by electron-beam-pulse processing. Annual technical report, March 15, 1980-March 15, 1981

    SciTech Connect (OSTI)

    Tobin, S.P.

    1981-05-01

    In the past year a process has been developed for creating high-quality epitaxial layers of germanium on silicon substrates using rapid heating and cooling with a pulsed electron beam. This single-crystal germanium coating is the key to the production of high efficiency GaAs solar cells on low-cost silicon substrates in an economical manner. Thin (less than or equal to 1 ..mu..m) layers of Ge have been deposited on Si wafers by chemical vapor deposition (CVD) in single-crystal form or by vacuum evaporation in amorphous or polycrystalline form. The CVD films have given the best results, with good crystallinity and electrical properties as deposited. A persistent problem with surface roughness in the as-deposited films has been overcome by pulsed electron beam melting of the near-surface region in time periods on the order of a microsecond. The brief molten period smooths the surface features without compromising the crystallinity, electrical properties, or interfacial abruptness of the Ge film. These layers are of a quality suitable for further evaluation by GaAs growth and cell processing in the next phase of the program. Pulsed electron beam processing also serves a vital function for the evaporated Ge films, which are melted by the beam and recrystallized on the Si substrates, epitaxial single crystal Ge layers result from amorphous or polycrystalline starting films. To date results have not been as satisfactory as for CVD films; contamination from several sources has been identified as a problem. Many of these sources have been eliminated, so that a decision on the intrinsic limitations of the evaporated film approach should be made in the near future.

  10. Formation of Porous Layers by Electrochemical Etching of Germanium and Gallium Arsenide for Cleave Engineered Layer Transfer (CELT) Application in High Efficiency Multi-Junction Solar Cells

    E-Print Network [OSTI]

    Fong, David Michael

    2012-01-01

    Efficiency Multi-Junction Solar Cells A thesis submitted inHigh Efficiency Multi-Junction Solar Cells By David Michaelsubstrate costs of multi-junction solar cells by recycling

  11. A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

    E-Print Network [OSTI]

    Flewitt, Andrew J.; Powell, M.J.

    2014-01-01

    crystal to organic light emitting diode technology and with requirements for larger areas and higher resolutions. A number of alternative material systems to a-Si:H have emerged, including organic semiconductors,2 nanocrystalline silicon...

  12. Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

    SciTech Connect (OSTI)

    Hosalli, A. M.; Van Den Broeck, D. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)

    2013-12-02

    We demonstrate a metalorganic chemical vapor deposition growth approach for inverting N-polar to Ga-polar GaN by using a thin inversion layer grown with high Mg flux. The introduction of this inversion layer allowed us to grow p-GaN films on N-polar GaN thin film. We have studied the dependence of hole concentration, surface morphology, and degree of polarity inversion for the inverted Ga-polar surface on the thickness of the inversion layer. We then use this approach to grow a light emitting diode structure which has the MQW active region grown on the advantageous N-polar surface and the p-layer grown on the inverted Ga-polar surface.

  13. Formation of Porous Layers by Electrochemical Etching of Germanium and Gallium Arsenide for Cleave Engineered Layer Transfer (CELT) Application in High Efficiency Multi-Junction Solar Cells

    E-Print Network [OSTI]

    Fong, David Michael

    2012-01-01

    III! V Multijunction Solar Cells,” (2003). J. F. Geisz, etEfficiency Multi-Junction Solar Cells A thesis submitted inEfficiency Multi-Junction Solar Cells By David Michael Fong

  14. Formation of Porous Layers by Electrochemical Etching of Germanium and Gallium Arsenide for Cleave Engineered Layer Transfer (CELT) Application in High Efficiency Multi-Junction Solar Cells

    E-Print Network [OSTI]

    Fong, David Michael

    2012-01-01

    technique for LM triple junction solar cell grown on porousAnother common triple-junction solar cell utilizes a GaAstechnique for LM triple junction solar cell grown on porous

  15. Rare-earth transition-metal gallium chalcogenides RE{sub 3}MGaCh{sub 7} (M=Fe, Co, Ni; Ch=S, Se)

    SciTech Connect (OSTI)

    Rudyk, Brent W.; Stoyko, Stanislav S.; Oliynyk, Anton O.; Mar, Arthur, E-mail: arthur.mar@ualberta.ca

    2014-02-15

    Six series of quaternary rare-earth transition-metal chalcogenides RE{sub 3}MGaCh{sub 7} (M=Fe, Co, Ni; Ch=S, Se), comprising 33 compounds in total, have been prepared by reactions of the elements at 1050 °C (for the sulphides) or 900 °C (for the selenides). They adopt noncentrosymmetric hexagonal structures (ordered Ce{sub 3}Al{sub 1.67}S{sub 7}-type, space group P6{sub 3}, Z=2) with cell parameters in the ranges of a=9.5–10.2 Å and c=6.0–6.1 Å for the sulphides and a=10.0–10.5 Å and c=6.3–6.4 Å for the selenides as refined from powder X-ray diffraction data. Single-crystal structures were determined for five members of the sulphide series RE{sub 3}FeGaS{sub 7} (RE=La, Pr, Tb) and RE{sub 3}CoGaS{sub 7} (RE=La, Tb). The highly anisotropic crystal structures consist of one-dimensional chains of M-centred face-sharing octahedra and stacks of Ga-centred tetrahedra all pointing in the same direction. Magnetic measurements on the sulphides reveal paramagnetic behaviour in some cases and long-range antiferromagnetic behaviour with low Néel temperatures (15 K or lower) in others. Ga L-edge XANES spectra support the presence of highly cationic Ga tetrahedral centres with a tendency towards more covalent Ga–Ch character on proceeding from the sulphides to the selenides. Band structure calculations on La{sub 3}FeGaS{sub 7} indicate that the electronic structure is dominated by Fe 3d-based states near the Fermi level. - Graphical abstract: The series of chalcogenides RE{sub 3}MGaS{sub 7}, which form for a wide range of rare-earth and transition metals (M=Fe, Co, Ni), adopt highly anisotropic structures containing chains of M-centred octahedra and stacks of Ga-centred tetrahedra. Display Omitted - Highlights: • Six series (comprising 33 compounds) of chalcogenides RE{sub 3}MGaCh{sub 7} were prepared. • They adopt noncentrosymmetric hexagonal structures with high anisotropy. • Most compounds are paramagnetic; some show antiferromagnetic ordering. • Ga L-edge XANES confirms presence of cationic Ga species.

  16. IIl-nitride nanowires and heterostructures : growth and optical properties on nanoscale

    E-Print Network [OSTI]

    Zhou, Xiang, Ph. D. Massachusetts Institute of Technology

    2014-01-01

    Gallium nitride (GaN) and indium gallium nitride (InGaN) nanowires promise potential for further improving the electricity-to-light energy conversion efficiencies in light emitting diodes due to strain relaxation, reduced ...

  17. NREL preprints for the 23rd IEEE Photovoltaic Specialists Conference

    SciTech Connect (OSTI)

    Fitzgerald, M. [ed.

    1993-05-01

    Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

  18. Performance testing and Bayesian Reliability Analysis of small diameter, high power electric heaters for the simulation of nuclear fuel rod temperatures 

    E-Print Network [OSTI]

    O'Kelly, David Sean

    2000-01-01

    The conversion of plutonium from a nuclear weapon to nuclear reactor fuel requires an evaluation of the residual gallium as a potential corrosive material within an operating nuclear fuel element. Homogeneous trace levels of gallium may remain...

  19. TRAVELING-WAVE TUBE AMPLIFIER CHARACTERISTICS STUDY FOR STOCHASTIC BEAM COOLING EXPERIMENTS

    E-Print Network [OSTI]

    Leskovar, B.

    2010-01-01

    Power Gallium-Arsenide Field- Effect Transistors and Helix Traveling-Wave Tubes (TWT) were considered as potential

  20. Gamma ray measurements with photoconductive detectors using a...

    Office of Scientific and Technical Information (OSTI)

    AND TECHNOLOGY; ARGON; BREMSSTRAHLUNG; DEUTERIUM; DIAMONDS; GALLIUM ARSENIDES; GAMMA DETECTION; GAMMA RADIATION; HYDROGEN; MEV RANGE; NEON; PHOTOCONDUCTORS; PHOTOMULTIPLIERS;...

  1. Band gap narrowing in zinc oxide-based semiconductor thin films...

    Office of Scientific and Technical Information (OSTI)

    ABSORPTION; ALUMINIUM COMPOUNDS; BORON COMPOUNDS; CHARGE CARRIERS; CONCENTRATION RATIO; DENSITY; DOPED MATERIALS; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM COMPOUNDS; INDIUM...

  2. "Title","Creator/Author","Publication Date","OSTI Identifier...

    Office of Scientific and Technical Information (OSTI)

    ABSORPTION; ALUMINIUM COMPOUNDS; BORON COMPOUNDS; CHARGE CARRIERS; CONCENTRATION RATIO; DENSITY; DOPED MATERIALS; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM COMPOUNDS; INDIUM...

  3. TITLE AUTHORS SUBJECT SUBJECT RELATED DESCRIPTION PUBLISHER AVAILABILI...

    Office of Scientific and Technical Information (OSTI)

    ABSORPTION ALUMINIUM COMPOUNDS BORON COMPOUNDS CHARGE CARRIERS CONCENTRATION RATIO DENSITY DOPED MATERIALS ELECTRONIC STRUCTURE ENERGY GAP GALLIUM COMPOUNDS INDIUM COMPOUNDS...

  4. Creating CZTS Thin Films Via Stacked Metallic CVD and Sulfurization

    E-Print Network [OSTI]

    Bielecki, Anthony

    2013-01-01

    D.B. Mitzi, High-efficiency solar cell with Earth- abun-solar cells. CIGS solar cell efficiencies have been reportedto maximize solar cell efficiency, it is important to

  5. (Created 5/09) UNL Environmental Health and Safety (402) 472-4925 http://ehs.unl.edu

    E-Print Network [OSTI]

    Tsymbal, Evgeny Y.

    that of natural uranium (7.1E-7 Ci/g). Certain uranium compounds, such mass spectroscopy standards, uranyl acetate and uranyl nitrate, may be acquired in small quantities without RSC approval. However, such compounds shall

  6. Reconciling Projections of Colorado River Stream Flow Over

    E-Print Network [OSTI]

    Washington at Seattle, University of

    Upper Basin 7.5 MAF Lower Basin 1.5 MAF Mexico - Average annual naturalized flow: 14.8 MAF (18.3 BCM (CLIMAS) Dennis Lettenmaier, Julie Vano (CIG) Martin Hoerling, Kevin Werner (NOAA) Levi Brekke

  7. Module Handbook Specialisation Photovoltaics

    E-Print Network [OSTI]

    Habel, Annegret

    solar cell Real solar cells Silicon solar cells: crystalline, multicrystalline, amorphous Cells: CdTe and CIGS technologies. Organic solar cells. Part 2: Fabrication Methods Crystal defects Theory Fabrication methods Solar cell properties Cell research and pilot productions facilities

  8. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    2 (CIGS) or Cusub 2ZnSn(S,Se)sub 4 (CZTS) absorber layers in thin-film photovoltaics. Using hybrid functional calculations, we characterize the electrical and optical...

  9. JAHRESBERICHT Laboratorium fur Festkorperphysik

    E-Print Network [OSTI]

    Leonardo, Degiorgi

    Z¨urich #12;Cover page: Flexible CIGS solar cells on a 25cm2 polyimide substrate. The demonstrated conversion efficiency of 14.1 % sets a new world record for flexible solar cells on polymers. The solar cells

  10. Thse prsente pour obtenir le grade de DOCTEUR DE L'COLE POLYTECHNIQUE

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    and technology . . . . . . . . . . . . . . . . . . 6 2.1.2 CIGS solar cell for solar cells 5 2.1 Photovoltaic solar cells . . . . . . . . . . . . . . . . . . . . . . 6 2.1.1 History . . . . . . . . . . . . . . . . . . . . . . 8 2.2 Physics of the solar cell . . . . . . . . . . . . . . . . . . . . . . 9 2.3 I

  11. Reaction kinetics of a-CuInSe2 formation from an In2Se3/CuSe bilayer precursor film

    E-Print Network [OSTI]

    Anderson, Timothy J.

    with Ga or S are proven absorber materials for high efficiency thin film solar cells. Interestingly CIGS system using the stacked elemental film precursors (e.g. glass/Cu/In/Se, glass/Cu/Se, glass

  12. Advanced Materials and Nano Technology for Solar Cells

    E-Print Network [OSTI]

    Han, Tao

    2014-01-01

    http://rredc.nrel.gov/solar/spectra/am1.5/ASTMG173/ASTMG173.CdTe and CIGS thin-film solar cells: highlights and4.57) Eduardo Lorenzo (1994). Solar Electricity: Engineering

  13. Microsoft Word - 12184b

    Energy Savers [EERE]

    of uranium and radium, ranging from approximately 5 to 50 picocuries per gram (pCig). It is not regarded as a FUSRAP waste originating from AECMED operations, but...

  14. Individual identification of free hole and electron dynamics...

    Office of Scientific and Technical Information (OSTI)

    as an understanding of this behavior is essential for improving the performance of solar cells composed of CIGS thin films. A characteristic double-peak structure due to the...

  15. Reliability Issues for Photovoltaic Modules (Presentation)

    SciTech Connect (OSTI)

    Kurtz, S.

    2009-10-01

    Si modules good in field; new designs need reliability testing. CdTe & CIGS modules sensitive to moisture; carefully seal. CPV in product development stage; benefits from expertise in other industries.

  16. Reliability Challenges for Solar Energy (Presentation)

    SciTech Connect (OSTI)

    Kurtz, S.

    2009-04-27

    PV industry can benefit from reliability testing experience of microelectronics industry . Si modules perform well in field; CdTe/CIGS must be sealed to moisture; CPV in product development stage.

  17. Creating CZTS Thin Films Via Stacked Metallic CVD and Sulfurization

    E-Print Network [OSTI]

    Bielecki, Anthony

    2013-01-01

    Katagiri, Cu2ZnSnS4 thin film solar cells, Thin Solid FilmsIndium Galenide Films Thin-film solar cells are created bycandidate for thin- film solar cells. CIGS solar cell

  18. Development of Barrier Films for Packaging Flexible Electronics

    E-Print Network [OSTI]

    Das, Suman

    Pum, Applied Materials, SRC #12;3/23/15 2 Solid State Lighting Flexible Challenges for Other Devices Exposure to moisture can cause degradaPon in both OLED CIGS Requirement of OLEDs Food / PharmaceuDcal packaging Commercial polymer

  19. Processing Materials Devices and Diagnostics for Thin Film Photovoltaics: Fundamental and Manufacturability Issues; Final Report, 5 September 2001 - 31 May 2008

    SciTech Connect (OSTI)

    Birkmire, R. W.; Shafarman, W. N.; Eser, E.; Hegedus, S. S.; McCandless, B. E.; Dobson, K. D.; Bowden, S.

    2009-04-01

    The critical issues addressed in this study on CIGS, CdTe, and a-Si modules will provide the science and engineering basis for developing viable commercial processes and improved module performance.

  20. Presented at the 13th ICTMC, Oct 14 18, 2002

    E-Print Network [OSTI]

    Sites, James R.

    Abstract Solar cells have been fabricated with partial electrolyte treatments of CuInGaSe2 (CIGS) thin filmPresented at the 13th ICTMC, Oct 14 ­ 18, 2002 Surface Treatment of CuInGaSe2 Thin Films and Its by the completion of the solar cells with a ZnO layer. 2. Experimental Techniques CIGS thin films were grown at NREL

  1. PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS Prog. Photovolt: Res. Appl. 2001; 9:211215 (DOI:10.1002/pip.374)

    E-Print Network [OSTI]

    Romeo, Alessandro

    . Polycrystalline compound semiconductor thin-®lm solar cells based on Cu(In,Ga)Se2 (CIGS) and CdTe are known to high-energy irradiation is superior to conventional Si or GaAs solar cells.5±7 CIGS solar cells:211±215 (DOI:10.1002/pip.374) SHORT COMMUNICATION: ACCELERATED PUBLICATION Flexible CdTe Solar Cells on Polymer

  2. Electron drift-mobility measurements in polycrystalline CuIn1-xGaxSe2 solar cells

    E-Print Network [OSTI]

    Schiff, Eric A.

    .1063/1.3692165] The chalcopyrite alloys CuIn1ÀxGaxSe2 (CIGS) are the basis of very promising thin film solar cells, with solar con conduction band states.8,9 Empirical optimization of CIGS for solar cells thus appears to have led to lowElectron drift-mobility measurements in polycrystalline CuIn1-xGaxSe2 solar cells S. A. Dinca, E. A

  3. Mat. Res. Soc. Symp. Proc. Vol. 668 @ 2001 Materials Research Society Influence of proton irradiation and development of flexible CdTe solar cells on polyimide

    E-Print Network [OSTI]

    Romeo, Alessandro

    investigations on Cu(In,Ga)Se2 (called CIGS) solar cells have proven that their stability against high energy cells on polymer films can yield more than 2- kW/kg specific power. CIGS solar cells of about 10 to 12 irradiation and development of flexible CdTe solar cells on polyimide A. Romeo, D.L. Bätzner, H. Zogg and A

  4. PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS Prog. Photovolt: Res. Appl. 2004; 12:93111 (DOI: 10.1002/pip.527)

    E-Print Network [OSTI]

    Romeo, Alessandro

    Te2 have been achieved. Many groups across the world have developed CIGS solar cells with efficiencies of CIGS and CdTe solar cells have proven that their stability against particle irradiation is superior:93­111 (DOI: 10.1002/pip.527) Development of Thin-film Cu(In,Ga)Se2 and CdTe Solar Cells A. Romeo1 , M

  5. EECE 577 Assignment 2 Due date: October 20, at the beginning of class.

    E-Print Network [OSTI]

    Pulfrey, David L.

    investigated for use in low-cost, thin-film solar cells (see, for example, Nanosolar's web-site). CIGS can be p-doped by vacancies, and is used in conjunction with n-CdS to form a heterojunction solar cell. In this assignment the goal is to determine if high-efficiency cells (15-20%) can be made using CIGS as the base

  6. Post-Growth Manipulation of Transition Metal Dichalcogenides Thin Film

    E-Print Network [OSTI]

    Ma, Quan

    2014-01-01

    electron doping in thin MoS2 films deposited on dielectriclayer Molybdenum Disulfide Films by Sulfur/Selenium ExchangeMolybdenum disulfide films by sulfur/ selenium exchange, ACS

  7. Degradation of Selenocyanate with an Advanced Reduction Process(ARP) 

    E-Print Network [OSTI]

    Luo, Guofan

    2014-08-05

    Selenocyanate (SeCN^(-)) is a common form of selenium contamination in refinery and mining wastewater generated from processing oil or minerals from seleniferous formations such as marine shales. Humans who drink water containing selenium over...

  8. Salinity controls on trophic interactions among invertebrates and algae of solar evaporation ponds in the Mojave Desert and relation to shorebird foraging and selenium risk

    E-Print Network [OSTI]

    Herbst, David B

    2006-01-01

    AMONG INVERTEBRATES AND ALGAE OF SOLAR EVAPORATION PONDS INplanktonic invertebrates and algae present along with avianof invertebrates and algae, and avian foraging were examined

  9. Selenium fractionation and cycling in the intertidal zone of the Carquinez Strait. Annual Report. October 1, 1995 through December 31, 1996.

    E-Print Network [OSTI]

    Zawislanski, P.T.

    2010-01-01

    l Interstitial Water Extraction and Sample HomogenizationExtraction A. 1 Interstitial Water Extraction and SampleA.2 Distilled Water Extraction A.3 Phosphate Extraction A.4

  10. APdCu(Se2)(Se3) (A ) K and Rb): New Quaternary Copper Palladium Polyselenides with Unusual Metal-Selenium Coordination

    E-Print Network [OSTI]

    Li, Jing

    APdCu(Se2)(Se3) (A ) K and Rb): New Quaternary Copper Palladium Polyselenides with Unusual Metal structurally characterized quaternary copper palladium polychalcogenides with a (Se2)2- and a (Se3)2- fragment ) K and Rb), which are the first quaternary copper palladium polychalcogenides obtained

  11. Field effect transistors with layered two-dimensional SnS22xSex conduction channels: Effects of selenium substitution

    E-Print Network [OSTI]

    Peng, Haibing

    ://dx.doi.org/10.1063/1.4819072] Sustaining Moore's Law beyond silicon-based elec- tronic devices has drawn ever for wide range of applications in areas like field effect devices,10,11 memory devices,12 and energy storage.13,14 Among this class of mate- rials, SnS2, a semiconductor with a band gap of 2.1 e

  12. Salinity controls on trophic interactions among invertebrates and algae of solar evaporation ponds in the Mojave Desert and relation to shorebird foraging and selenium risk

    E-Print Network [OSTI]

    Herbst, David B

    2006-01-01

    arti?cial salt evaporation ponds of the San Fran- cisco Bayindustrial evaporation ponds. Water Environment Research 71:Hydrobiology of the Alviso salt ponds. Ecol- ogy 38:382–385.

  13. Information technology and innovative drainage management practices for selenium load reduction from irrigated agriculture to provide stakeholder assurances and meet contaminant mass loading policy objectives

    E-Print Network [OSTI]

    Quinn, N.W.T.

    2010-01-01

    were retrofitted on drainage sumps and discharge pointsat individual tile drainage sumps. Water districts alsoestimate the drainage flow contribution from each sump and

  14. Developments in Bioremediation of Soils and Sediments Polluted with Metals and Radionuclides: 2. Field Research on Bioremediation of Metals and Radionuclides

    E-Print Network [OSTI]

    Hazen, Terry C.

    2010-01-01

    Bioremediation of selenium-contaminated sediments and water.soils, sediments, water, or air. Bioremediation is not a new

  15. Arsenic chemistry in soils and sediments

    E-Print Network [OSTI]

    Fendorf, S.

    2010-01-01

    and selenium from landfill leachate by clay minerals. Soil1987) Using landfill leachate, (Frost and Griffin, 1977) (

  16. Untitled Document

    National Nuclear Security Administration (NNSA)

    Radionuclide Retardation Measurements of Batch-Sorption Distribution Coefficients for Barium, Cesium, Selenium, Strontium, Uranium, Plutonium, and Neptunium, Submittal 12...

  17. Zinc oxide (ZnO) has attracted much interest during last decades as a functional material. It has been known as a conductive material when elements such as indium, gallium and aluminum are doped.

    E-Print Network [OSTI]

    oxide (ITO), graphene, and carbon nanotube film. In addition, a new generation solar cell electrodes. The nanostructures for solar cells using inorganic materials such as silicon (Si), titanium oxide (TiO2), and ZnO have been an interesting topic for research in solar cell community in order

  18. Sandia Energy - EC Publications

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laboratory, Golden, CO, USA year 2009 We describe a process to manufacture ultrathin photovoltaic (PV) cells from crystalline silicon and gallium arsenide. The method uses...

  19. Electronic Transport in Novel Graphene Nanostructures

    E-Print Network [OSTI]

    Gannett, William Joy

    2012-01-01

    ultrasmooth graphene nanoribbon semiconductors,” Sciencegraphene: Evidence of a two-dimensional wide bandgap semiconductor,”graphene, hBN, and gallium selenide (GaSe), a layered semiconductor

  20. Dielectric Elastomers for Fluidic and Biomedical Applications

    E-Print Network [OSTI]

    McCoul, David

    2015-01-01

    nickel before transferring to PDMS. [174] Carbon NanotubesNickel Indium Platinum Tin Chromium Gallium Lead Mercury Indium Tin Oxide Single-Walled Carbon Nanotubes

  1. TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron

    E-Print Network [OSTI]

    neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

  2. CX-010895: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Development and Industrialization of Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Light Emitting Diodes LEDs on Patterned Sapphire Substrate (PSS) for Low Cost Emitter Architecture CX(s) Applied: B3.6 Date: 06/27/2013 Location(s): California Offices(s): National Energy Technology Laboratory

  3. innovati nNREL Scientists Spurred the Success of Multijunction Solar Cells

    E-Print Network [OSTI]

    innovati nNREL Scientists Spurred the Success of Multijunction Solar Cells Before 1984, many a solar cell can convert into electricity. Olson thought the focus should change to finding materials-winning gallium indium phosphide/gallium arsenide tandem solar cell, which had achieved record efficiencies, con

  4. This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. IEEE JOURNAL OF PHOTOVOLTAICS 1

    E-Print Network [OSTI]

    Atwater, Harry

    as presented, with the exception of pagination. IEEE JOURNAL OF PHOTOVOLTAICS 1 Gallium Arsenide Solar Cell--Gallium arsenide, nanospheres, photovoltaic systems, whispering gallery modes (WGMs). I. INTRODUCTION THE route as the active layer is thinned [2]. Thin-film photovoltaics offer the possibility to significantly reduce

  5. Lead Exposure: A Contributing Cause of the Current Breast Cancer Epidemic in Nigerian Women

    E-Print Network [OSTI]

    Alatise, Olusegun I.; Schrauzer, Gerhard N.

    2010-01-01

    Keywords Breast cancer . Lead . Cadmium . Tin . Chromium .selenium and low doses of lead on mammary tumor development2001) Prevalence of elevated blood lead levels in Nigerian

  6. 9-28-15 ASER Summary Memo (Lawrence).pdf

    Office of Environmental Management (EM)

    neptunium-237, nickel, nitrate, nitrate + nitrite as nitrogen, octachlorodibenzo-p-dioxin, radium-226, radium-228, selenium, silver, strontium-90, thorium-228, thorium-230,...

  7. Radiation Measurements 42 (2007) 10291032 www.elsevier.com/locate/radmeas

    E-Print Network [OSTI]

    2007-01-01

    M) of two uranyl nitrate compounds that have different uranium isotopic concentrations and cells were exposed to either 238U-uranyl nitrate, specific activity 0.33 Ci/g, or DU-uranyl nitrate similar Abbreviations: DU, Depleted uranium; V79, Chinese hamster lung cells; DU-UO2NO3 depleted uranium-uranyl

  8. The Center for integrative genomics

    E-Print Network [OSTI]

    Kaessmann, Henrik

    The Center for integrative genomics Report 2005­2006 #12;Presentation Director's message 4 Scientific advisory committee 6 Organigram of the CIG 7 research The structure and function of genomes and their evolution alexandrereymond ­ Genome structure and expression 10 henrikKaessmann ­ Evolutionary genomics 12

  9. Transmittance from visible to mid infra-red in AZO films grown by atomic layer deposition system

    E-Print Network [OSTI]

    Tanner, David B.

    for solar cells, flat panel displays, LCD electrodes, touch panel transparent contacts and IR win- dows Westgate a , D.I. Koukis b , D.J. Arenas c , D.B. Tanner b a Center for Autonomous Solar Power, Binghamton found applications in thin film photovoltaics such as CdTe and CIGS based solar cells (Dhere et al

  10. Experience on Running a Small-Size Simulated Car Racing Tournament in an Introductory Programming Course

    E-Print Network [OSTI]

    Cho, Sung-Bae

    Experience on Running a Small-Size Simulated Car Racing Tournament in an Introductory Programming Intelligence and Games (CIG) 2009 Car Racing Competition software and rules with small modifications. Five General Terms Algorithms, Measurement, Performance, Human Factors Keywords Competition, Game, Car Racing

  11. POSTGRADUATE MONTEREY, CALIFORNIA

    E-Print Network [OSTI]

    power/energy density batteries and fuel cells technologies, as well as the potential benefit of applying Tracker (MPPT), Energy Storage Systems, Fuel Cells 16. PRICE CODE 17. SECURITY CLASSIFICATION OF REPORT-selenide (CIGS) semiconductor materials is considered. In order to achieve a higher efficiency, the simulation

  12. Clean Energy Ambassadors-Outreach Menu The following set programs presented by Clean Energy Ambassadors are available for visitation to

    E-Print Network [OSTI]

    Hochberg, Michael

    devices. Smart Grids and Energy Storage Challenge (1 hour middle school or higher) Students explore the need for energy storage in our renewable supply system using a simulation. Then look at various battery examples of existing and emerging solar cell technology such as silicon, CIGS, CZTS, and plastic solar

  13. UNIVERSITY OF PAVIA PHYSICS DEPARTMENTS

    E-Print Network [OSTI]

    -film photovoltaics" with partners in Italy, U.K., and Spain. The problem of energy storage is also likely to become or amorphous silicon, CdTe, CIGS-CuInGaSe2) in the limit of thin- and ultra-thin films, with nanophotonic

  14. Solar Energy Materials & Solar Cells 88 (2005) 6573 Investigation of pulsed non-melt laser annealing

    E-Print Network [OSTI]

    Anderson, Timothy J.

    2005-01-01

    Solar Energy Materials & Solar Cells 88 (2005) 65­73 Investigation of pulsed non-melt laser annealing on the film properties and performance of Cu(In,Ga)Se2 solar cells Xuege Wanga , Sheng S. Lia,Ã, C time to modify near- surface defects and related junction properties in Cu(In,Ga)Se2 (CIGS) solar cells

  15. The Roles of Cu Impurity States in CdTe Thin Film Solar Cells Ken K. Chin1

    E-Print Network [OSTI]

    as commercially successful, second generation thin film photovoltaic (PV) products, at a production cost of $0 PV technologies, such as Cu(In,Ga)Se2 (CIGS), which has a lower theoretical limit ~26% but a higher involves Cu impurities. The CdTe thin film uses low cost 5N tellurium, which, either as a byproduct

  16. Theory of Quantum Transport in Mesoscopic Devices and its Potential for

    E-Print Network [OSTI]

    Efficiency of Transport in Mesoscopic Systems?! #12;Does Nanostructuring increase Solar Cell Efficiency? No=Dye-sens.TiO, CIGS=CuInGaSe #12;Best Research Cell Efficiencies: Source: NREL 2003 Best Cells are Bulk, Crystalline;Efficiency of Solar Cells Where is the Photon energy wasted? Courtesy of M. Graetzel, "Plugging into Sun

  17. Proc. of the 24th IEEE Photovoltaic Specialists Conference (IEEE, New York, 1995), pp. 291-294. ADMITTANCE MEASUREMENTS ON Cu(In,Ga)Se2 POLYCRYSTALLINE THIN-

    E-Print Network [OSTI]

    Scofield, John H.

    for approximately 30 CIS and CIGS polycrystalline thin film solar cells having efficiencies of 12% or better-294. ADMITTANCE MEASUREMENTS ON Cu(In,Ga)Se2 POLYCRYSTALLINE THIN- FILM SOLAR CELLS John H. Scofield Physics-16.4% efficient, 0.43 cm2 area, polycrystalline, thin-film solar cells solar cells from 16 different CuInSe2 (CIS

  18. Semitransparent ultrathin CdTe solar cells Semitransparent ultrathin CdTe solar cells and durabilityand durability

    E-Print Network [OSTI]

    Rollins, Andrew M.

    Semitransparent ultrathin CdTe solar cells Semitransparent ultrathin CdTe solar cells lines · Thinfilm CIGS--not available in transparent form · Dye sensitized solar thin films· Dye.E. McCandless, W.A. Buchanan. "High throughput processing of CdTe/CdS solar cells with thin absorber

  19. EARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS

    E-Print Network [OSTI]

    Ceder, Gerbrand

    materials for thin film solar cells such as CdTe and CIGS suffer from concerns over resource scarcity (eEARTH ABUNDANT MATERIALS FOR HIGH EFFICIENCY HETEROJUNCTION THIN FILM SOLAR CELLS Yun Seog Lee 1 conversion efficiencies should be increased. In terms of reducing module cost, thin film solar cells

  20. Electrodeposition of CuGaSe2 from Thiocyanate-Containing Electrolytes

    E-Print Network [OSTI]

    Suni, Ian Ivar

    . Manuscript received September 8, 2010. Published December 2, 2010. CuInxGa1-xSe2 CIGS thin film solar cells- nation velocities.1 Thin film solar cells promise significant economic benefits, because the optical, electrochemical deposition methods may be significantly less expensive for scale-up of thin film solar cells,3

  1. SYNTHESIS AND SURFACE CHEMISTRY OF ZN3P2 Gregory M. Kimball, Nathan S. Lewis, Harry A. Atwater

    E-Print Network [OSTI]

    Kimball, Gregory

    alternative to traditional materials (e.g. CIGS, CdTe, a-Si) for thin film photovoltaics. Open circuit voltage in Zn3P2 cells has been limited by Fermi-level pinning due to surfaces states and heterojunction promise for solar energy conversion but has not been investigated as thoroughly as other thin film

  2. Building Integrated Photovoltaics: New trends and Challenges'

    E-Print Network [OSTI]

    Painter, Kevin

    Silicon (a-Si:H) Some examples of a-Si flexible modules on mpolymer and metal foils #12;CIGS Solar Cells terrestrial solar PV market. #12;The solar cell glass market showed 6.8% degrowth in 2012 over last year. While the entire PV module production increased by about 5GW, the selling price of glass for solar cells

  3. 917wileyonlinelibrary.com www.MaterialsViews.com

    E-Print Network [OSTI]

    the spatial location of performance-limiting recombination in CQD solar cells, and take steps to remedy reported interface loss mechanism in dye sensitized solar cells.[11­13] Recombination at absorber avenue to improving performance. CIGS[4,5] and organic photovoltaics[6,7] have both benefited from

  4. Hole drift mobility measurements in polycrystalline CuIn1-xGaxSe2 S. A. Dinca and E. A. Schiff

    E-Print Network [OSTI]

    Schiff, Eric A.

    mobility measurements on polycrystalline CuIn1-xGaxSe2 CIGS thin films incorporated into solar-cell of these properties is that solar cells fabricated from the thin- film polycrystalline materials have larger in a depletion region at the top interface with cadmium sulfide. 12 cells, originating in two laboratories, were

  5. Modeling low cost hybrid tandem photovoltaics with the potential for efficiencies exceeding 20%

    E-Print Network [OSTI]

    McGehee, Michael

    shows that an organic solar cell may be added on top of a commercial CIGS cell to improve its efficiency% in order to keep installation costs down. In this work we explore a novel solar cell architecture, a hybrid of an inexpensive and low temperature processed solar cell, such as an organic or dye-sensitized solar cell

  6. STRUCTURAL AND OPTOELECTRONIC PROPERTIES OF SYNTHESIZED CuInSe2 NANOPARTICLES

    E-Print Network [OSTI]

    Anderson, Timothy J.

    is one of the promising light absorbing materials for hetero-junction solar cells and is used as a photon absorber in thin-film solar cells [1]. The conversion efficiency of 19.9% has been reported by multisource for formation of CIS compounds. The device performance of CIGS is strongly dependent on both doping and traps

  7. The effect of Na in polycrystalline and epitaxial single-crystal CuIn1xGaxSe2

    E-Print Network [OSTI]

    Rockett, Angus

    online 15 December 2004 Abstract Na is found to improve the performance of Cu(In,Ga)Se2 (CIGS) solar the highest efficiency, exceeding 19%, of any thin film polycrystalline solar cell [1]. The diodes work well cells although the mechanism is not clear. This paper briefly reviews some of the observations on Na

  8. Journal of Crystal Growth 294 (2006) 231235 In situ investigation on selenization kinetics of CuIn precursor using

    E-Print Network [OSTI]

    Anderson, Timothy J.

    2006-01-01

    Keywords: A1. X-ray diffraction; B1. Copper indium diselenide; B3. Solar cells 1. Introduction Chalcopyrite film solar cells. The commonly used techniques for CuInSe2 layer formation are co, reaction mechanisms, and kinetics for the formation of Cu(InxGa1Àx)Se2 (CIGS) and its sub- ternaries (i

  9. CX-100073: Categorical Exclusion Determination

    Office of Energy Efficiency and Renewable Energy (EERE)

    2 Meter Linear High Temperature Evaporation Source for High Speed, Large Area CIGS Module Manufacturing Award Number: DE-EE0006811 CX(s) Applied: A9, B3.6 Solar Energy Technologies Date: 09/17/2014 Location(s): California Office(s): Golden Field Office

  10. Device modeling and simulation of the performance of Cu(In1x,Gax)Se2 solar cells

    E-Print Network [OSTI]

    Anderson, Timothy J.

    -junction Cu(In1Àx,Gax)Se2 (CIGS) solar cells. Increasing the open-circuit voltage (Voc) to improve the overallDevice modeling and simulation of the performance of Cu(In1Àx,Gax)Se2 solar cells Jiyon Song solar cell have been carried out. A variety of graded band-gap structures, including space charge region

  11. Presented at the 29th IEEE PVSC, May 20 -24, 2002 2P3.15 : Page 1 of 4

    E-Print Network [OSTI]

    Sites, James R.

    University, Fort Collins, CO 80523, USA 2 National Renewable Energy Laboratory, Golden, CO 80401,USA 3 ShellS layer has been used on CIGS absorbers made at the Na- tional Renewable Energy Laboratory (NREL to the two main types of devices (CdS and Cd PE). Next we examine the relative gains and losses in effi

  12. Investigation of defect properties in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy

    E-Print Network [OSTI]

    Anderson, Timothy J.

    Renewable Energy Lab, Golden, CO 80401, USA Received 1 July 2003; received in revised form 1 January 2004 information about the defect types, their capture cross-sections, and energy levels and densities in the CIGS Renewable Energy Laboratory (NREL) was found to contain three minority-carrier (elec- tron) traps and a 13

  13. Transport, Interfaces, and Modeling in Amorphous Silicon Based Solar Cells: Final Technical Report, 11 February 2002 - 30 September 2006

    SciTech Connect (OSTI)

    Schiff, E. A.

    2008-10-01

    Results for a-Si characteristics/modeling; photocarrier drift mobilities in a-Si;H, ..mu..c-Si:H, CIGS; hole-conducting polymers as p-layer for a-Si and c-Si; IR spectra of p/i and n/i interfaces in a-Si.

  14. MG DOPING AND ALLOYING IN ZN3P2 HETEROJUNCTION SOLAR CELLS Gregory M. Kimball, Nathan S. Lewis, Harry A. Atwater

    E-Print Network [OSTI]

    Kimball, Gregory

    . In this manuscript, the electronic and material properties of Mg impurities in Zn3P2 are studied by the Hall effect phosphide (Zn3P2) is a promising and earth-abundant alternative to traditional materials (e.g. CdTe, CIGS, a have therefore been constructed from Schottky contacts, p-n semiconductor heterojunctions [4

  15. IP ET AL. VOL. XXX ' NO. XX ' 000000 ' XXXX www.acsnano.org

    E-Print Network [OSTI]

    Sargent, Edward H. "Ted"

    opportunity to improve spectral utilization.9 High- efficiency IIIÀV multijunction cells absorb this region10. Kiani, and I. J. Kramer contributed equally. S ilicon solar cells dominate solar photo- voltaics (PV),1 with laboratory power conversion efficiencies (PCEs) that reach 25%.2 Thin-film CdTe and CuInGaSe (CIGS) cells

  16. PAN ET AL. VOL. 7 ' NO. 11 ' 1015810166 ' 2013 www.acsnano.org

    E-Print Network [OSTI]

    Sargent, Edward H. "Ted"

    , including the infrared portion.2 Com- pared to other third-generation photovoltaic materials such as CIGS3 American Chemical Society Automated Synthesis of Photovoltaic- Quality Colloidal Quantum Dots Using Sciences and Engineering, Solar and Photovoltaics Engineering Center, King Abdullah University of Science

  17. Advancing the concept of real-time water quality management in the

    E-Print Network [OSTI]

    Quinn, Nigel

    quality objectives #12;ALTERNATIVE TO SALT TMDL LOAD MANAGEMENT Real Time Component: Allows additional Project selenium load management Seasonal wetland water quality management in Grasslands Ecological Area JOAQUIN RIVER WATER QUALITY FORECASTING MODEL #12;GRASSLAND BYPASS PROJECT SELENIUM LOAD MANAGEMENT #12

  18. 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or

    E-Print Network [OSTI]

    Robbiano, Lorenzo

    Selenium Test Cases: An Industrial Case Study about Web Page Element Localization Maurizio Leotta, Diego test automation and test suite maintenance in the context of Web applications. The Web application associated with the realignment of four equivalent Selenium WebDriver test suites, implemented using the page

  19. Few-cycle mid-infrared pulse generation, characterization, and coherent propagation in optically dense media

    E-Print Network [OSTI]

    Scherer, Norbert F.

    and solid water and solutions . The region from 5000 to 6000 nm is also important since carbonyl stretching ; ``BBO'' OPAs followed by difference frequency mixing of the signal and idler in silver gallium sulfide

  20. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    epitaxial growth of indium gallium nitride (InGaN) layers capable of producing high-efficiency LEDs when combined with chip-on-board packaging techniques. The proposed...

  1. GaN/Cu[subscript 2]O Heterojunctions for Photovoltaic Applications

    E-Print Network [OSTI]

    Hering, K.P.

    Several growth methods were employed to investigate the photovoltaic behavior of GaN/Cu[subscript 2]O heterojunctions by depositing cuprous oxide thin films on top of gallium nitride templates. The templates consist of a ...

  2. CX-010873: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Ammonothermal Bulk Gallium Nitride Crystal Growth for Energy Efficient Lightning and Power Electronics CX(s) Applied: B3.6 Date: 05/22/2013 Location(s): California Offices(s): Advanced Research Projects Agency-Energy

  3. 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 2749 www.advmat.de

    E-Print Network [OSTI]

    Prentiss, Mara

    . Whitesides* Stretchable Microfluidic Radiofrequency Antennas This paper describes a new method for fabricating stretchable radiofrequency antennas. The antennas consist of liquid metal (eutectic gallium indium be repeatedly stretched, while retaining a high efficiency (> 95 %) in radiation. "Stretchability

  4. 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly ...

  5. Applied Materials Develops an Advanced Epitaxial Growth System to Bring Down LED Costs

    Broader source: Energy.gov [DOE]

    With the help of DOE funding, Applied Materials has developed an advanced epitaxial growth system for gallium nitride (GaN) LED devices that decreases operating costs, increases internal quantum efficiency, and improves binning yields.

  6. Wrapping process for fabrication of A-15 superconducting composite wires

    DOE Patents [OSTI]

    Suenaga, M.; Klamut, C.J.; Luhman, T.S.

    1980-08-15

    A method for fabricating superconducting wires wherein a billet of copper containing filaments of niobium or vanadium is rolled to form a strip which is wrapped about a tin-alloy core to form a composite. The alloy is a tin-copper alloy for niobium filaments and a gallium-copper alloy for vanadium filaments. The composite is then drawn down to a desired wire size and heat treated. During the heat treatment process, the tin in the bronze reacts with the niobium to form the superconductor niobium tin. In the case where vanadium is used, the gallium in the gallium bronze reacts with the vanadium to form the superconductor vanadium gallium. This new process eliminates the costly annealing steps, external tin plating and drilling of bronze ingots required in a number of prior art processes.

  7. Device-level thermal analysis of GaN-based electronics

    E-Print Network [OSTI]

    Bagnall, Kevin Robert

    2013-01-01

    Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

  8. ORNL, Industry Collaboration Puts Spotlight on Solar T DOING...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for thin-film copper indium gallium di- selenide, a direct-bandgap material for solar cells. Ferro Corpora- tion (Independence, Ohio) is creating inks and pastes to be used for...

  9. Test vehicle detector characterization system for the Boeing YAL-1 airborne laser

    E-Print Network [OSTI]

    Steininger-Holmes, Jason Thomas

    2008-01-01

    The test vehicle detector characterization system provides a convenient and efficient tool for rapidly evaluating the optical sensitivity of the GAP6012, GAP100, GAP300, and GAP1000 indium gallium arsenide detectors used ...

  10. PROJECT PROFILE: Silicon-Based Tandem Solar Cells

    Broader source: Energy.gov [DOE]

    The project will demonstrate bonded gallium indium phosphide (GaInP) on silicon tandem cells, evaluate the advantages and disadvantages of this method of forming higher-efficiency tandem cells, and compare two- and three-terminal device configurations.

  11. Applications of DOTA-Lanthanide "Click" complexes to sensing and imaging 

    E-Print Network [OSTI]

    Hanna, Jill

    2011-11-23

    structural motif has the ability to complex a plethora of potentially useful radionuclides including; yttrium, indium, gallium, lutetium and gadolinium. In general, DOTA-complexes doped with gadolinium are utilised for the identification of tumour sites while...

  12. Sandia Energy - Sandia Develops a Synthesis of Quantum Dots that...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    that Increases the Quantum Yield to 95.5% White light-emitting diodes (LEDs) based on blue indium-gallium-nitride (InGaN) LEDs that excite yellow-green-emitting...

  13. Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications

    E-Print Network [OSTI]

    Socratous, Josephine; Banger, Kulbinder K.; Vaynzof, Yana; Sadhanala, Aditya; Brown, Adam D.; Sepe, Alessandro; Steiner, Ullrich; Sirringhaus, Henning

    2015-02-18

    of vehicles or build- ings. [ 3 ] Most of the research so far, has focused on oxides deposited via low- temperature sputtering techniques and a wide range of ternary and quaternary elemental compositions has been explored with InGaZnO (IGZO) being one... annealing temperature. Figure S5 (Supporting Information) shows corroborating electrical data for the quaternary oxide IGZO for different gallium doping. The presence of gallium is known to suppress oxygen vacan- cies due to its strong bond with oxygen...

  14. Metal organic chemical vapor deposition of 111-v compounds on silicon

    DOE Patents [OSTI]

    Vernon, Stanley M. (Wellesley, MA)

    1986-01-01

    Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

  15. ULTRA BARRIER TOPSHEET (UBT) FOR FLEXIBLE PHOTOVOLTAICS

    SciTech Connect (OSTI)

    Schubert, Charlene

    2013-01-09

    This slideshow presents work intended to: Scale-up the Generation -1 UBT to 1+meter width full-scale manufacturing; Develop a Generation-2 UBT on the pilot line, targeting improved performance, longer lifetime and lower cost; Transfer Generation-2 UBT from the pilot line to the full-scale manufacturing line in 2014; and Validate service life of Generation-1 UBT for the 25+ year lifetime. 3M has scaled up UBT for production at 1.2 meter width. 3M is conducting extensive lifetime studies including: –Evaluation of customer processing and installation conditions; –Indoor accelerated testing of UBT film and full CIGS modules; –Outdoor testing of UBT film and CIGS modules. Results have been used to improve ultra barrier film performance for flex module applications.

  16. EECE 577 Assignment 2 Due date: October 20, at the beginning of class.

    E-Print Network [OSTI]

    Pulfrey, David L.

    investigated for use in low-cost, thin-film solar cells (see, for example, Nanosolar's web-site). CIGS can be p-doped by vacancies, and is used in conjunction with n-CdS to form a heterojunction solar cell. In this assignment, but with a Schottky-barrier front region in place of the n-CdS. Irradiance data for the AM1.5G spectrum can be found

  17. Available at: http://publications.ictp.it IC/2010/008 United Nations Educational, Scientific and Cultural Organization

    E-Print Network [OSTI]

    of polycrystalline thin film solar cells based on Cu(In,Ga)Se2 (CIGS) have already reached values above 19 efficiencies of completed CuInSe2/CdS/ZnO solar cell devices. In the case of traditional two-stage growth pressure [3, 4]. However, the efficiencies of Cu(In,Ga)Se2/CdS/ZnO solar cell devices, in which

  18. Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer

    E-Print Network [OSTI]

    .1063/1.4789855] The toxicity of Cd and the scarcity of Te, In, and Ga used in CdTe and Cu(In,Ga)S2 (CIGS) thin-film solar cellsEnhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfideS is a promising earth-abundant material for photovoltaic applications. Heterojuction solar cells were made

  19. MSE 460, Spring 2009 Electronic Materials and Processing I Classroom Schedule

    E-Print Network [OSTI]

    Braun, Paul

    III-2, introIII-6 logic and thermal management 4/13 -- CIGS solar cells (GL) 4/15 -- no lecture 4/16 JN 8.3­8.4 a-Si solar cells (GL) 3/18 -- second hour exam 3/20 -- junctions #12;date reading lecture topic 3/30 -- p-n junctions 4/1 JN 8.1­8.2 thin film solar cells 4/3 JN 8.5 polycrystalline materials 4

  20. DIRECT EVIDENCE OF MG-ZN-P ALLOY FORMATION IN MG/ZN3P2 SOLAR CELLS Gregory M. Kimball

    E-Print Network [OSTI]

    Kimball, Gregory

    Te, CIGS, a-Si) for thin film photovoltaics. The record solar energy conversion efficiency for Zn3P2 cellsDIRECT EVIDENCE OF MG-ZN-P ALLOY FORMATION IN MG/ZN3P2 SOLAR CELLS Gregory M. Kimball 1 , Nathan S indicate that high efficiency should be realizable by optimization of Mg treatment in Mg/Zn3P2 solar cells