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Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Copper Indium Gallium Diselenide  

Broader source: Energy.gov [DOE]

DOE-sponsored research on copper indium gallium diselenide [Cu(InxGa1-x)Se2], or CIGS, solar cells focuses on developing better film qualities, and thus, higher efficiencies. A list of current...

2

Electrical Bias as an Alternate Method for Reproducible Measurement of Copper Indium Gallium Diselenide (CIGS) Photovoltaic Modules: Preprint  

SciTech Connect (OSTI)

Light-to-dark metastable changes in thin-film photovoltaic (PV) modules can introduce uncertainty when measuring module performance on indoor flash testing equipment. This study describes a method to stabilize module performance through forward-bias current injection rather than light exposure. Measurements of five pairs of thin-film copper indium gallium diselenide (CIGS) PV modules indicate that forward-bias exposure maintained the PV modules at a stable condition (within 1%) while the unbiased modules degraded in performance by up to 12%. It was additionally found that modules exposed to forward bias exhibited stable performance within about 3% of their long-term outdoor exposed performance. This carrier-injection method provides a way to reduce uncertainty arising from fast transients in thin-film module performance between the time a module is removed from light exposure and when it is measured indoors, effectively simulating continuous light exposure by injecting minority carriers that behave much as photocarriers do. This investigation also provides insight into the initial light-induced transients of thin-film modules upon outdoor deployment.

Deline, C.; Stokes, A.; Silverman, T. J.; Rummel, S.; Jordan, D.; Kurtz, S.

2012-08-01T23:59:59.000Z

3

E-Print Network 3.0 - aluminum gallium indium Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Physics, Portland State University Collection: Physics 2 Alternative Energy Technologies Solar Power Summary: CIGS - Copper - Indium - Gallium - diSelenide Cd-Te -- Cadmium...

4

Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells  

DOE Patents [OSTI]

High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO), Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

1998-08-08T23:59:59.000Z

5

Long-Term Performance Data and Analysis of CIS/CIGS Modules Deployed Outdoors (Presentation)  

SciTech Connect (OSTI)

The long-term performance data of copper indium diselenide (CIS) and gallium-alloyed CIS (CIGS) photovoltaic (PV) modules are investigated to assess the reliability of this technology.

del Cueto, J. A.; Kroposki, B.; Rummel, S.; Anderberg, A.

2008-08-10T23:59:59.000Z

6

NREL scientists develop robust, high-performance IZO transparent contact for CIGS solar cells.  

E-Print Network [OSTI]

NREL scientists develop robust, high-performance IZO transparent contact for CIGS solar cells indium gallium diselenide (CIGS) solar cell is zinc oxide (ZnO). The problem is that unprotected Zn is a lifetime-limiting problem that is currently addressed solely through encapsulation. Fundamentally improving

7

Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films  

DOE Patents [OSTI]

Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

2014-11-04T23:59:59.000Z

8

Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells  

DOE Patents [OSTI]

A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.

Bhattacharya, Raghu N. (Littleton, CO); Hasoon, Falah S. (Arvada, CO); Wiesner, Holm (Golden, CO); Keane, James (Lakewood, CO); Noufi, Rommel (Golden, CO); Ramanathan, Kannan (Golden, CO)

1999-02-16T23:59:59.000Z

9

Commercialization of High Efficiency Low Cost CIGS Technology Based on Electroplating: Final Technical Progress Report, 28 September 2007 - 30 June 2009  

SciTech Connect (OSTI)

This report describes SoloPower's work as a Photovoltaic Technology Incubator awardee within the U.S. Department of Energy's Solar Energy Technologies Program. The term of this subcontract with the National Renewable Energy Laboratory was two years. The project focused on SoloPower's electrodeposition-based copper indium gallium (di)selenide (CIGS) technology. Under this subcontract, SoloPower improved the quality of its flexible metal substrates, increased the size of its solar cells from 0.5 cm2 to 120 cm2, increased the small-area cell efficiencies from near 11% to near 14%, demonstrated large-area cells, and developed a module manufacturing process.

Basol, B.

2010-08-01T23:59:59.000Z

10

Exploration of Novel Reaction Pathway for Formation of Copper Indium Gallium Diselenide: Cooperative Research and Development Final Report, CRADA Number CRD-03-121  

SciTech Connect (OSTI)

The investigation will explore a potentially low-cost method of forming CIGS for use in solar cells. Investigators from HelioVolt will work in NREL laboratories to modify and apply our tools in fabrication of the CIGS layer. Investigators from NREL will assist in preparing substrates and in compleing solar cells composed of these CIGS layers to evaluate the effectiveness of the HelioVolt processes.

van Hest, M.

2014-11-01T23:59:59.000Z

11

Preparation of CIGS-based solar cells using a buffered electrodeposition bath  

DOE Patents [OSTI]

A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.

Bhattacharya, Raghu Nath (Littleton, CO)

2007-11-20T23:59:59.000Z

12

Barrier Coatings for Thin Film Solar Cells: Final Subcontract Report, September 1, 2002 -- January 30, 2008  

SciTech Connect (OSTI)

This program has involved investigations of the stability of CdTe and copper-indium-gallium-diselenide (CIGS) solar cells under damp heat conditions and effects of barrier coatings.

Olsen, L. C.

2010-03-01T23:59:59.000Z

13

Effects of Metastabilities on CIGS Photovoltaic Modules  

Broader source: Energy.gov [DOE]

This poster describes a SunShot Initiative solar project led by a team from Nexcis Photovoltaic Technology entitled "Effects of Metastabilities on CIGS Photovoltaic Modules." The team studied the driving force of the mechanisms which governs the different observed phases during storage, light exposition and annealing. The aim of this study is to obtain a better understanding of this phenomenon and hence a better evaluation of its impact on solar panel reliability.

14

Stress Induced Degradation Modes in CIGS Mini-Modules: Preprint  

SciTech Connect (OSTI)

This study demonstrates that the method of encapsulation can affect the long-term stability of CIGS modules, principally through interactions with the ZnO.

Kempe, M. D.; Terwilliger, K. M.; Tarrant, D.

2008-05-01T23:59:59.000Z

15

CIGS Material and Device Stability: A Processing Perspective (Presentation)  

SciTech Connect (OSTI)

This is a general overview of CIGS material and device fundamentals. In the first part, the basic features of high efficiency CIGS absorbers and devices are described. In the second part, some examples of previous collaboration with Shell Solar CIGSS graded absorbers and devices are shown to illustrate how process information was used to correct deviations and improve the performance and stability.

Ramanathan, K.

2012-03-01T23:59:59.000Z

16

Method of junction formation for CIGS photovoltaic devices  

DOE Patents [OSTI]

Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.

Delahoy, Alan E. (Rocky Hill, NJ)

2010-01-26T23:59:59.000Z

17

Method of junction formation for CIGS photovoltaic devices  

DOE Patents [OSTI]

Sulfur is used to improve the performance of CIGS devices prepared by the evaporation of a single source ZIS type compound to form a buffer layer on the CIGS. The sulfur may be evaporated, or contained in the ZIS type material, or both. Vacuum evaporation apparatus of many types useful in the practice of the invention are known in the art. Other methods of delivery, such as sputtering, or application of a thiourea solution, may be substituted for evaporation.

Delahoy, Alan E.

2006-03-28T23:59:59.000Z

18

Manufacturing-Friendly Advance Seen in CIGS Solar Cell Processing (Fact Sheet)  

SciTech Connect (OSTI)

Scientists developed a robust, high-performance amorphous InZnO transparent contact for CIGS solar cells.

Not Available

2011-05-01T23:59:59.000Z

19

NUMERICAL MODELING OF CIGS AND CdTe SOLAR CELLS: SETTING THE BASELINE  

E-Print Network [OSTI]

NUMERICAL MODELING OF CIGS AND CdTe SOLAR CELLS: SETTING THE BASELINE M. Gloeckler, A. Consequently specific baseline parameters for CIGS and CdTe are proposed. The modeling results important complications that are often found in experimental CIGS and CdTe solar cells. 1. INTRODUCTION

Sites, James R.

20

2006 Minerals Yearbook U.S. Department of the Interior  

E-Print Network [OSTI]

to develop a low-cost manufacturing process for flexible thin film copper indium gallium diselenide (CIGS's Letters from Japan Ltd., 2007). Mainstream LCDs were also trending toward larger panel sizes, which construction of the first 8th generation LCD fabrication (8G) line at the Tangjeong production complex located

Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Explanation of Light/Dark Superposition Failure in CIGS Solar Cells Markus Gloeckler, Caroline R. Jenkins, and James R. Sites  

E-Print Network [OSTI]

Explanation of Light/Dark Superposition Failure in CIGS Solar Cells Markus Gloeckler, Caroline R ABSTRACT CIGS solar cells in many cases show a failure of light/dark superposition of their current feature in CuIn1-xGaxSe2 (CIGS) solar cells is the lack of superposition between light and dark current

Sites, James R.

22

Sandia National Laboratories: fundamental physics of CIGS solar module  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1development Sandia,evaluatingfull module characterization HelioVoltphysics of CIGS

23

Gallium interactions with Zircaloy  

E-Print Network [OSTI]

of weapons-grade plutonium (WGPu) in the United States is the conversion of weapons-grade plutonium into mixed-oxide (MOX) reactor fuel. MOX fuel fabricated in this way must be compatible with currently used nuclear fuel components. Since US WGPu contains... that gallium may have on zircaloy cladding during reactor operation. As a result of the reprocessing of spent fuel used in European nuclear programs, many studies have been conducted on the production and behavior of MOX fuel in traditional reactors [5...

West, Michael Keith

2012-06-07T23:59:59.000Z

24

Analysis of Alternate Methods to Obtain Stabilized Power Performance of CdTe and CIGS PV Modules (Presentation)  

SciTech Connect (OSTI)

This presentation outlines an analysis of alternate methods to obtain stabilized power performance of CdTe and CIGS PV modules.

del Cueto, J. A.; Deline, C. A.; Rummel, S.

2011-02-01T23:59:59.000Z

25

Formation of selenide, sulfide or mixed selenide-sulfide films on metal or metal coated substrates  

DOE Patents [OSTI]

A process and composition for preventing cracking in composite structures comprising a metal coated substrate and a selenide, sulfide or mixed selenide sulfide film. Specifically, cracking is prevented in the coating of molybdenum coated substrates upon which a copper, indium-gallium diselenide (CIGS) film is deposited. Cracking is inhibited by adding a Se passivating amount of oxygen to the Mo and limiting the amount of Se deposited on the Mo coating.

Eser, Erten; Fields, Shannon

2012-05-01T23:59:59.000Z

26

Modeling and simulation of CuIn{sub 1?x}Ga{sub x}Se{sub 2} based thin film solar cell  

SciTech Connect (OSTI)

In this work, CIGS (Copper Indium Gallium Diselenide) based solar cell structure has been simulated. We have been calculated short circuit current, open circuit voltage and efficiency of the cell. The thickness of the absorption layer is varied from 400 to 3000 nm, keeping the thickness of other layers unchanged. The effect of absorption layer thickness over cell performance has been analyzed and found that the efficiency increases upto 22% until the thickness of the absorption layer reaches around 2000 nm.

Kumari, S., E-mail: sarita.kumari132@gmail.com; Verma, A. S. [Department of Physics, Banasthali University, Rajasthan-304022 (India); Singh, P.; Gautam, R. [Department of Electronics and Communication, Krishna Institute of Engg. and Tech., Ghaziabad-201206 (India)

2014-04-24T23:59:59.000Z

27

H I ASYMMETRIES IN THE ISOLATED GALAXY CIG 292  

SciTech Connect (OSTI)

We present Expanded Very Large Array (EVLA) D-array observations of the 21 cm line of neutral hydrogen (H I) of CIG 292, an isolated SA(s)b galaxy at a distance of {approx}24.3 Mpc. From previous H I single dish observations the galaxy was known to have a mildly asymmetric H I profile (A {sub flux} = 1.23 {+-} 0.3). Our EVLA observations show there is {approx}12% more H I projected south of the optical center (approaching velocities) than in the north (receding velocities), despite the H I extending {approx}16% further to the north than the south. The H I projected within the optical disk must have been perturbed within the H I relaxation time ({approx}10{sup 8} yr) which implies that this cannot have been caused by any of the three nearest companions, as their distance ({approx}0.5 Mpc) is too large. Neither H I-rich companions nor tidal tails were found within our field of view and velocity range covered. Our kinematical data suggest that the inner part harbors an oval distortion whereas the outer regions show signs of a modest warp. The mild asymmetry in the H I global profile thus actually masks stronger asymmetries in the two-dimensional distributions of gas and star-forming regions in this galaxy. Since the galaxy is isolated, this must predominantly be due to processes related to its formation and secular evolution.

Portas, Antonio; Scott, Tom C.; Verdes-Montenegro, Lourdes; Sulentic, Jack; Sengupta, Chandreyee [Instituto de Astrofisica de Andalucia (CSIC), Glorieta de AstronomIa s/n, 18008 Granada (Spain); Brinks, Elias; Heesen, Volker [Centre for Astrophysics, University of Hertfordshire, Hatfield, Herts AL10 9AB (United Kingdom); Bosma, Albert; Athanassoula, E. [Laboratoire d'Astrophysique de Marseille (LAM), UMR6110, CNRS/Universite de Provence/CNRS, Technopole de Marseille Etoile, 38 rue Frederic Joliot Curie, 13388 Marseille CEDEX 13 (France); Espada, Daniel [National Astronomical Observatory of Japan (NAOJ), 2-21-1 Osawa, Mitaka, Tokyo 181-8588 (Japan); Verley, Simon [Departamento de Fisica Teorica y del Cosmos, Facultad de Ciencias, Universidad de Granada (Spain); Yun, Min [Department of Astronomy, University of Massachusetts, 710 North Pleasant Street, Amherst, MA 01003 (United States)

2011-09-20T23:59:59.000Z

28

Gallium Safety in the Laboratory  

SciTech Connect (OSTI)

A university laboratory experiment for the US Department of Energy magnetic fusion research program required a simulant for liquid lithium. The simulant choices were narrowed to liquid gallium and galinstan (Ga-In-Sn) alloy. Safety information on liquid gallium and galinstan were compiled, and the choice was made to use galinstan. A laboratory safety walkthrough was performed in the fall of 2002 to support the galinstan experiment. The experiment has been operating successfully since early 2002.

Lee C. Cadwallader

2003-06-01T23:59:59.000Z

29

Gallium Safety in the Laboratory  

SciTech Connect (OSTI)

A university laboratory experiment for the US Department of Energy magnetic fusion research program required a simulant for liquid lithium. The simulant choices were narrowed to liquid gallium and galinstan (Ga-In-Sn) alloy. Safety information on liquid gallium and galinstan were compiled, and the choice was made to use galinstan. A laboratory safety walkthrough was performed in the fall of 2002 to support the galinstan experiment. The experiment has been operating successfully since early 2002.

Cadwallader, L.C.

2003-05-07T23:59:59.000Z

30

Investigation of Some Transparent Metal Oxides as Damp Heat Protective Coating for CIGS Solar Cells: Preprint  

SciTech Connect (OSTI)

We investigated the protective effectiveness of some transparent metal oxides (TMO) on CIGS solar cell coupons against damp heat (DH) exposure at 85oC and 85% relative humidity (RH). Sputter-deposited bilayer ZnO (BZO) with up to 0.5-um Al-doped ZnO (AZO) layer and 0.2-um bilayer InZnO were used as 'inherent' part of device structure on CdS/CIGS/Mo/SLG. Sputter-deposited 0.2-um ZnSnO and atomic layer deposited (ALD) 0.1-um Al2O3 were used as overcoat on typical BZO/CdS/CIGS/Mo/SLG solar cells. The results were all negative -- all TMO-coated CIGS cells exhibited substantial degradation in DH. Combining the optical photographs, PL and EL imaging, SEM surface micro-morphology, coupled with XRD, I-V and QE measurements, the causes of the device degradations are attributed to hydrolytic corrosion, flaking, micro-cracking, and delamination induced by the DH moisture. Mechanical stress and decrease in crystallinity (grain size effect) could be additional degrading factors for thicker AZO grown on CdS/CIGS.

Pern, F. J.; Yan, F.; Zaaunbrecher, B.; To, B.; Perkins, J.; Noufi, R.

2012-10-01T23:59:59.000Z

31

In-depth analysis of CIGS film for solar cells, structural and optical characterization  

E-Print Network [OSTI]

Space-resolved X-ray diffraction measurements performed on gradient-etched CuIn$_{1-x}$Ga$_x$Se$_2$ (CIGS) solar cells provide information about stress and texture depth profiles in the absorber layer. An important parameter for CIGS layer growth dynamics, the absorber thickness-dependent stress in the molybdenum back contact is analyzed. Texturing of grains and quality of the polycrystalline absorber layer are correlated with the intentional composition gradients (band gap grading). Band gap gradient is determined by space-resolved photoluminescence measurements and correlated with composition and strain profiles.

Slobodskyy, A; ~Ulyanenkova, T; ~Doyle, S; Powalla, M; ~Baumbach, T; ~Lemmer, U

2010-01-01T23:59:59.000Z

32

Potential effects of gallium on cladding materials  

SciTech Connect (OSTI)

This paper identifies and examines issues concerning the incorporation of gallium in weapons derived plutonium in light water reactor (LWR) MOX fuels. Particular attention is given to the more likely effects of the gallium on the behavior of the cladding material. The chemistry of weapons grade (WG) MOX, including possible consequences of gallium within plutonium agglomerates, was assessed. Based on the calculated oxidation potentials of MOX fuel, the effect that gallium may have on reactions involving fission products and possible impact on cladding performance were postulated. Gallium transport mechanisms are discussed. With an understanding of oxidation potentials and assumptions of mechanisms for gallium transport, possible effects of gallium on corrosion of cladding were evaluated. Potential and unresolved issues and suggested research and development (R and D) required to provide missing information are presented.

Wilson, D.F.; Beahm, E.C.; Besmann, T.M.; DeVan, J.H.; DiStefano, J.R.; Gat, U.; Greene, S.R.; Rittenhouse, P.L.; Worley, B.A.

1997-10-01T23:59:59.000Z

33

P-type gallium nitride  

DOE Patents [OSTI]

Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

1997-08-12T23:59:59.000Z

34

P-type gallium nitride  

DOE Patents [OSTI]

Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

Rubin, Michael (Berkeley, CA); Newman, Nathan (Montara, CA); Fu, Tracy (Berkeley, CA); Ross, Jennifer (Pleasanton, CA); Chan, James (Berkeley, CA)

1997-01-01T23:59:59.000Z

35

Local environment and composition of magnesium gallium layered...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Local environment and composition of magnesium gallium layered double hydroxides determined from solid-state 1H and 71Ga NMR Local environment and composition of magnesium gallium...

36

Developing Market Opportunities for Flexible Rooftop Applications of PV Using Flexible CIGS Technology: Market Considerations  

SciTech Connect (OSTI)

There has been a recent upsurge in developments for building-integrated phototovoltaics (BiPV) roof top materials based on CIGS. Several new companies have increased their presence and are looking to bring products to market for this application in 2011. For roof-top application, there are significant key requirements beyond just having good conversion efficiency. Other attributes include lightweight, as well as moisture-proof, and fully functionally reliable. The companies bringing these new BIPV/BAPV products need to ensure functionality with a rigorous series of tests, and have an extensive set of 'torture' tests to validate the capability. There is a convergence of form, aesthetics, and physics to ensure that the CIGS BiPV deliver on their promises. This article will cover the developments in this segment of the BiPV market and delve into the specific tests and measurements needed to characterize the products. The potential market sizes are evaluated and the technical considerations developed.

Sabnani, L.; Skumanich, A.; Ryabova, E.; Noufi, R.

2011-01-01T23:59:59.000Z

37

Cost and Reliability Improvement for CIGS-Based PV on Flexible Substrate: Annual Technical Report, 24 May 2006 - 25 September 2007  

SciTech Connect (OSTI)

Global Solar Energy has enhanced module reliability, reduced cost and improved performance of its CIGS deposition process, and reduced cost of materials and processes for contacts.

Weideman, S.

2008-08-01T23:59:59.000Z

38

ZnMgO by APCVD Enabling High-Performance Mid-bandgap CIGS on Polyimide Modules: October 2009--October 2010  

SciTech Connect (OSTI)

This Pre-Incubator project was designed to increase the 'real world' CIGS based photovoltaic module performance and decrease the Levelized Cost of Energy (LCOE) of systems utilizing those modules compared to our traditional CIGS based photovoltaic modules. This was enabled by a) increasing the CIGS bandgap and b) developing better matched device finishing layers to the mid-bandgap CIGS based photovoltaics; including window and buffer layers (and eventually the TCO). Incremental progress in the novel device performance was demonstrated throughout the program, and ultimately achieved performance results that exceeded the milestones ahead of schedule. Metal-oxide buffer layer devices with mid-bandgap CIGS alloys on polyimide substrates were produced with efficiencies of over 12%. Corresponding mid-bandgap devices with CdS buffers produced over 13% efficient devices. Furthermore, no obvious degradation in the device performance has been observed to date, after proper storage ambient of the different types of unencapsulated devices were identified.

Woods, L.

2011-04-01T23:59:59.000Z

39

Sandia National Laboratories: thin-film PV materials (Si CIGS CdTe)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1developmentturbineredox-activeNational SolartSSLPV materials (Si CIGS CdTe) Sandians

40

Recovery of gallium from aluminum industry residues  

SciTech Connect (OSTI)

A procedure is proposed to recover gallium from flue dust aluminum residues produced in plants by using solid-phase extraction with a commercial polyether-type polyurethane foam (PUF). Gallium can be separated from high concentrations of aluminum, iron, nickel, titanium, vanadium, copper, zinc, sulfate, fluoride, and chloride by extraction with PUF from 3 M sulfuric acid and 3 M sodium chloride concentration medium with at least a 92% efficiency. Gallium backextraction was fast and quantitative with ethanol solution. In all recovery steps commercial-grade reagents could be used, including tap water. The recovered gallium was precipitated with sodium hydroxide solution, purified by dissolution and precipitation, calcinated, and the final oxide was 98.6% pure.

Carvalho, M.S.; Neto, K.C.M.; Nobrega, A.W.; Medeiros, J.A.

2000-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Swiss Federal Laboratories for Materials Science and Technology Advances in Thin Film PV: CIGS & CdTe  

E-Print Network [OSTI]

and Photovoltaics Thin film solar cells based on compound semiconductor absorbers: CIGS and CdTe High efficiency and Photovoltaics Swiss Federal Laboratories for Material Science and Technology Key issues in high efficiency CIGSTe Laboratory for Thin Films and Photovoltaics Empa- Swiss Federal Laboratories for Material Science

Canet, Léonie

42

Au-free Ohmic Contacts to Gallium Nitride and Graphene  

E-Print Network [OSTI]

This work deals with Au-free contact metallization schemes for gallium nitride (GaN) and graphene semiconductors. Graphene and gallium nitride are promising materials that can potentially be integrated together in the near future for high frequency...

Ravikirthi, Pradhyumna

2014-08-10T23:59:59.000Z

43

Characterizing organometallic-vapor-phase-epitaxy-grown indium gallium nitride islands on gallium nitride for light emitting diode applications.  

E-Print Network [OSTI]

??The indium-gallium-nitride on gallium-nitride (InGaN/GaN) materials system is a promising candidate for providing a high intensity, high efficiency solution to the yet unsolved problem of… (more)

Anderson, Kathy Perkins Jenkins

2011-01-01T23:59:59.000Z

44

GALLIUM--2000 30.1 By Deborah A. Kramer  

E-Print Network [OSTI]

the largest application for gallium, with optoelectronic devices [mostly laser diodes and light-use application for gallium, with 63% of total consumption. Optoelectronic devices accounted for 32% of domestic% of the gallium consumed in the United States was in the form of GaAs. GaAs was manufactured into optoelectronic

45

GALLIUM--1998 29.1 By Deborah A. Kramer  

E-Print Network [OSTI]

's) were the largest application for gallium, with optoelectronic devices [mostly laser diodes and light-use application for gallium, with 52% of total consumption. Optoelectronic devices accounted for 45% of domestic% of the gallium consumed in the United States was in the form of GaAs. GaAs was manufactured into optoelectronic

46

GALLIUM--1999 29.1 By Deborah A. Kramer  

E-Print Network [OSTI]

circuits (IC's) were the largest application for gallium, with optoelectronic devices [mostly laser diodes-use application for gallium, with 52% of total consumption. Optoelectronic devices accounted for 42% of domestic% of the gallium consumed in the United States was in the form of GaAs. GaAs was manufactured into optoelectronic

47

Stability of CIGS Solar Cells and Component Materials Evaluated by a Step-Stress Accelerated Degradation Test Method: Preprint  

SciTech Connect (OSTI)

A step-stress accelerated degradation testing (SSADT) method was employed for the first time to evaluate the stability of CuInGaSe2 (CIGS) solar cells and device component materials in four Al-framed test structures encapsulated with an edge sealant and three kinds of backsheet or moisture barrier film for moisture ingress control. The SSADT exposure used a 15oC and then a 15% relative humidity (RH) increment step, beginning from 40oC/40%RH (T/RH = 40/40) to 85oC/70%RH (85/70) as of the moment. The voluminous data acquired and processed as of total DH = 3956 h with 85/70 = 704 h produced the following results. The best CIGS solar cells in sample Set-1 with a moisture-permeable TPT backsheet showed essentially identical I-V degradation trend regardless of the Al-doped ZnO (AZO) layer thickness ranging from standard 0.12 ?m to 0.50 ?m on the cells. No clear 'stepwise' feature in the I-V parameter degradation curves corresponding to the SSADT T/RH/time profile was observed. Irregularity in I-V performance degradation pattern was observed with some cells showing early degradation at low T/RH < 55/55 and some showing large Voc, FF, and efficiency degradation due to increased series Rs (ohm-cm2) at T/RH ? 70/70. Results of (electrochemical) impedance spectroscopy (ECIS) analysis indicate degradation of the CIGS solar cells corresponded to increased series resistance Rs (ohm) and degraded parallel (minority carrier diffusion/recombination) resistance Rp, capacitance C, overall time constant Rp*C, and 'capacitor quality' factor (CPE-P), which were related to the cells? p-n junction properties. Heating at 85/70 appeared to benefit the CIGS solar cells as indicated by the largely recovered CPE-P factor. Device component materials, Mo on soda lime glass (Mo/SLG), bilayer ZnO (BZO), AlNi grid contact, and CdS/CIGS/Mo/SLG in test structures with TPT showed notable to significant degradation at T/RH ? 70/70. At T/RH = 85/70, substantial blistering of BZO layers on CIGS cell pieces was observed that was not seen on BZO/glass, and a CdS/CIGS sample displayed a small darkening and then flaking feature. Additionally, standard AlNi grid contact was less stable than thin Ni grid contact at T/RH ? 70/70. The edge sealant and moisture-blocking films were effective to block moisture ingress, as evidenced by the good stability of most CIGS solar cells and device components at T/RH = 85/70 for 704 h, and by preservation of the initial blue color on the RH indicator strips. The SSADT experiment is ongoing to be completed at T/RH = 85/85.

Pern, F. J.; Noufi, R.

2012-10-01T23:59:59.000Z

48

Gallium nitride junction field-effect transistor  

DOE Patents [OSTI]

An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

Zolper, John C. (Albuquerque, NM); Shul, Randy J. (Albuquerque, NM)

1999-01-01T23:59:59.000Z

49

Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

(nanowires) in the compound gallium selenide. In short, ordered lines of structural vacancies in the material stimulate the growth of "one-dimensional" structures less than 1...

50

Photonuclear Reaction Cross Sections for Gallium Isotopes  

E-Print Network [OSTI]

The photon induced reactions which are named as photonuclear reactions have a great importance in many field of nuclear, radiation physics and related fields. Since we have planned to perform photonuclear reaction on gallium target with bremmstrahlung photons from clinical linear accelerator in the future, the cross-sections of neutron (photo-neutron ({\\gamma},xn)) and proton (photo-proton ({\\gamma},xn)) productions after photon activation have been calculated by using TALYS 1.2 computer code in this study. The target nucleus has been considered gallium which has two stable isotopes, 69Ga and 71Ga. According to the results, we have seen that the calculations are in harmony in the limited literature values. Furthermore, the pre-equilibrium and compound process contributions to the total cross-section have been investigated.

Serkan Akkoyun; Tuncay Bayram

2014-09-08T23:59:59.000Z

51

PROPERTIES OF Cd and Zn PARTIAL ELECTROLYTE TREATED CIGS SOLAR CELLS K. Ramanathan, F.S. Hasoon, S. Smith, A. Mascarenhas, H. Al-Thani, J. Alleman, H.S. Ullal and J. Keane  

E-Print Network [OSTI]

PROPERTIES OF Cd and Zn PARTIAL ELECTROLYTE TREATED CIGS SOLAR CELLS K. Ramanathan, F.S. Hasoon, SS/CIGS interface has been treated as a "non- interacting," or abrupt junction. There are a few reports [3 changes such as those mentioned above have not been adequately treated in further analysis of the junction

Sites, James R.

52

Examination of Na-Doped Mo Sputtering for CIGS Devices: Cooperative Research and Development Final Report, CRADA Number CRD-10-375  

SciTech Connect (OSTI)

This work has investigated the use of Na doped Mo (MONA) sputtering targets for use in preparing CIGS devices. The Mo:Na material is doped to about 3% Na by weight, implying that a 40 nm layer on top of the standard Mo contact contains sufficient Na to dope a 2.5 ..mu..m CIGS film. The ability to control Na doping independent of both CIGS processing conditions and adhesion is an important gain for industry and research. Manufacturers gain a route to increased manufacturability and performance, while NREL researchers gain a tightened performance distribution of devices and increased process flexibility. Our immediate partner in this work, the Climax Molybdenum Technology Center, gains validation of their product.

Repins, I.

2012-01-01T23:59:59.000Z

53

Standard Reference Material 1751: Gallium Melting-Point Standard  

E-Print Network [OSTI]

Standard Reference Material 1751: Gallium Melting-Point Standard Gregory F. Strouse NIST Special Publication 260-157 #12;#12;NIST Special Publication 260-157 XXXX Standard Reference Material 1751: Gallium Melting-Point Standard Gregory F. Strouse Chemical Science and Technology Laboratory Process Measurements

54

ZnO:Al Doping Level and Hydrogen Growth Ambient Effects on CIGS Solar Cell Performance: Preprint  

SciTech Connect (OSTI)

Cu(In,Ga)Se2 (CIGS) photovoltaic (PV) cells require a highly conducting and transparent electrode for optimum device performance. ZnO:Al films grown from targets containing 2.0 wt.% Al2O3 are commonly used for this purpose. Maximum carrier mobilities of these films grown at room temperature are ~20-25 cm2V-1s-1. Therefore, relatively high carrier concentrations are required to achieve the desired conductivity, which leads to free carrier absorption in the near infrared (IR). Lightly doped films (0.05 - 0.2 wt.% Al2O3), which show less IR absorption, reach mobility values greater than 50 cm2V-1s-1 when deposited in H2 partial pressure. We incorporate these lightly doped ZnO:Al layers into CIGS PV cells produced at the National Renewable Energy Laboratory (NREL). Preliminary results show quantum efficiency values of these cells rival those of a past world-record cell produced at NREL that used 2.0 wt.% Al-doped ZnO films. The highest cell efficiency obtained in this trial was 18.1%.

Duenow, J. N.; Gessert, T. A.; Wood, D. M.; Egaas, B.; Noufi, R.; Coutts,T. J.

2008-05-01T23:59:59.000Z

55

STAR FORMATION IN THE EXTENDED GASEOUS DISK OF THE ISOLATED GALAXY CIG 96  

SciTech Connect (OSTI)

We study the Kennicutt-Schmidt star formation law and efficiency in the gaseous disk of the isolated galaxy CIG 96 (NGC 864), with special emphasis on its unusually large atomic gas (H I) disk (r{sub Hmathsci}/r{sub 25} = 3.5, r{sub 25} = 1.'85). We present deep Galaxy Evolution Explorer near- and far-UV observations, used as a recent star formation tracer, and we compare them with new, high-resolution (16''or 1.6 kpc) Very Large Array H I observations. The UV and H I maps show good spatial correlation outside the inner 1', where the H I phase dominates over H{sub 2}. Star-forming regions in the extended gaseous disk are mainly located along the enhanced H I emission within two (relatively) symmetric, giant gaseous spiral arm-like features, which emulate an H I pseudo-ring at r {approx_equal} 3'. Inside this structure, two smaller gaseous spiral arms extend from the northeast and southwest of the optical disk and connect to the previously mentioned H I pseudo-ring. Interestingly, we find that the (atomic) Kennicutt-Schmidt power-law index systematically decreases with radius, from N {approx_equal} 3.0 {+-} 0.3 in the inner disk (0.'8-1.'7) to N = 1.6 {+-} 0.5 in the outskirts of the gaseous disk (3.'3-4.'2). Although the star formation efficiency (SFE), the star formation rate per unit of gas, decreases with radius where the H I component dominates as is common in galaxies, we find that there is a break of the correlation at r = 1.5r{sub 25}. At radii 1.5r{sub 25} < r < 3.5r{sub 25}, mostly within the H I pseudo-ring structure, regions exist whose SFE remains nearly constant, SFE {approx_equal} 10{sup -11} yr{sup -1}. We discuss possible mechanisms that might be triggering the star formation in the outskirts of this galaxy, and we suggest that the constant SFE for such large radii (r > 2r{sub 25}) and at such low surface densities might be a common characteristic in extended UV disk galaxies.

Espada, D.; Sabater, J.; Verdes-Montenegro, L.; Sulentic, J. [Instituto de Astrofisica de AndalucIa, CSIC, Apdo. 3004, 18080 Granada (Spain); Munoz-Mateos, J. C.; Gil de Paz, A. [Departamento de Astrofisica y CC. de la Atmosfera, Universidad Complutense de Madrid, Avda. de la Complutense, s/n, E-28040 Madrid (Spain); Boissier, S.; Athanassoula, E.; Bosma, A. [Laboratoire d'Astrophysique de Marseille, OAMP, Universite Aix-Marseille and CNRS UMR 6110, 38 rue Frederic Joliot-Curie, 13388 Marseille Cedex 13 (France); Verley, S. [Dept. de Fisica Teorica y del Cosmos, Universidad de Granada, Granada (Spain); Leon, S. [Joint ALMA Observatory/ESO, Av. Alonso de Cordova 3107, Vitacura, Santiago (Chile); Yun, M., E-mail: daniel.espada@nao.ac.jp, E-mail: despada@cfa.harvard.edu [Department of Astronomy, University of Massachusetts, Amherst, MA 01003 (United States)

2011-07-20T23:59:59.000Z

56

Predicted roles of defects on band offsets and energetics at CIGS (Cu(In,Ga)Se2/CdS) solar cell interfaces and implications for improving performance  

E-Print Network [OSTI]

, and in- deed the global operating capacity for solar photovoltaics is increasing steadily.1 CurrentlyPredicted roles of defects on band offsets and energetics at CIGS (Cu(In,Ga)Se2/CdS) solar cell ZnO sputtering on the performance of Cu(In,Ga)Se2 thin film solar cells Appl. Phys. Lett. 105, 083906

Goddard III, William A.

57

Trajectory-Oriented and Fault-Tolerant-Based Intelligent Process Control for Flexible CIGS PV Module Manufacturing; Final Technical Report, 13 May 2002--30 May 2005  

SciTech Connect (OSTI)

ITN Energy Systems, Inc., and Global Solar Energy, Inc., assisted by NREL's PV Manufacturing R&D program, have continued to advance CIGS production technology by developing trajectory-oriented predictive/control models, fault-tolerance control, control platform development, in-situ sensors, and process improvements. Modeling activities included developing physics-based and empirical models for CIGS and sputter-deposition processing, implementing model-based control, and applying predictive models to the construction of new evaporation sources and for control. Model-based control is enabled by implementing reduced or empirical models into a control platform. Reliability improvement activities include implementing preventive maintenance schedules; detecting failed sensors/equipment and reconfiguring to tinue processing; and systematic development of fault prevention and reconfiguration strategies for the full range of CIGS PV production deposition processes. In-situ sensor development activities have resulted in improved control and indicated the potential for enhanced process status monitoring and control of the deposition processes. Substantial process improvements have been made, including significant improvement in CIGS uniformity, thickness control, efficiency, yield, and throughput. In large measure, these gains have been driven by process optimization, which in turn have been enabled by control and reliability improvements due to this PV Manufacturing R&D program.

Simpson, L.; Britt, J.; Birkmire, R.; Vincent, T.

2005-10-01T23:59:59.000Z

58

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary (crude, unrefined) gallium was recovered in 2013. Globally,  

E-Print Network [OSTI]

% of the gallium consumed was used in integrated circuits (ICs). Optoelectronic devices, which include laser diodes of the remaining gallium consumption. Optoelectronic devices were used in aerospace applications, consumer goods

59

Thermoelectric transport properties of polycrystalline titanium diselenide co-intercalated with nickel and titanium using spark plasma sintering  

SciTech Connect (OSTI)

Polycrystalline samples of nickel intercalated (0-5%) TiSe{sub 2} were attempted via solid-state reaction in evacuated quartz tubes followed by densification using a spark plasma sintering process. X-ray diffraction data indicated that mixed NiSe{sub 2} and TiSe{sub 2} phases were present after initial synthesis by solid-state reaction, but a pure TiSe{sub 2} phase was present after the spark plasma sintering. While EPMA data reveals the stoichiometry to be near 1:1.8 (Ti:Se) for all samples, comparisons of the measured bulk densities to the theoretical densities suggest that the off stoichiometry is a result of the co-intercalation of both Ni and Ti rather than Se vacancies. Due to the presence of excess Ti (0.085-0.130 per formula) in the van der Waals gap of all the samples, the sensitive electron-hole balance is offset by the additional Ti-3d electrons, leading to an increase in the thermopower (n-type) over pristine, stoichiometric TiSe{sub 2}. The effects of the co-intercalation of both Ni and Ti in TiSe{sub 2} on the structural, thermal, and electrical properties are discussed herein. - Graphical abstract: Co-intercalation of nickel and excess titanium into the van der Waals gap of TiSe{sub 2} via solid state synthesis followed by spark plasma sintering results in a systematic shift in the ratio of hole and electron carrier concentration, which is close to unity for pristine TiSe{sub 2}. This directly affects the electrical transport properties, and as the structural disorder induced by intercalation suppresses the lattice thermal conductivity, co-intercalation is an effective route to enhance the thermoelectric properties of transition metal diselenides. Highlights: Black-Right-Pointing-Pointer Single phase bulk Ni and Ti co-intercalated TiSe{sub 2} samples prepared by spark plasma sintering. Black-Right-Pointing-Pointer Density and X-ray diffraction suggest that the Ni and excess Ti are ordered in the Van der Waals gap. Black-Right-Pointing-Pointer Co-intercalation of Ni and Ti can be used to control electron-hole ratio and structural disorder.

Holgate, T.C. [Department of Energy Storage and Conversion, Technical University of Denmark, Riso Campus, 4000 Roskilde (Denmark); Zhu, S.; Zhou, M. [Department of Physics and Astronomy, Clemson University, Clemson, SC 29634 (United States); Bangarigadu-Sanasy, S.; Kleinke, H. [Department of Chemistry, University of Waterloo, Waterloo, Ontario, N2L 3G1 (Canada); He, J. [Department of Physics and Astronomy, Clemson University, Clemson, SC 29634 (United States); Tritt, T.M., E-mail: ttritt@clemson.edu [Department of Physics and Astronomy, Clemson University, Clemson, SC 29634 (United States)

2013-01-15T23:59:59.000Z

60

arsenide gallium nitride: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Lundberga,*, J. Lua , A Abstract The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been with a larger number of vacancies, that facilitates...

Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Cavity optomechanics in gallium phosphide microdisks  

SciTech Connect (OSTI)

We demonstrate gallium phosphide (GaP) microdisk optical cavities with intrinsic quality factors >2.8?×?10{sup 5} and mode volumes <10(?/n){sup 3}, and study their nonlinear and optomechanical properties. For optical intensities up to 8.0?×?10{sup 4} intracavity photons, we observe optical loss in the microcavity to decrease with increasing intensity, indicating that saturable absorption sites are present in the GaP material, and that two-photon absorption is not significant. We observe optomechanical coupling between optical modes of the microdisk around 1.5??m and several mechanical resonances, and measure an optical spring effect consistent with a theoretically predicted optomechanical coupling rate g{sub 0}/2??30?kHz for the fundamental mechanical radial breathing mode at 488?MHz.

Mitchell, Matthew; Barclay, Paul E., E-mail: pbarclay@ucalgary.ca [Institute for Quantum Science and Technology, University of Calgary, Calgary, Alberta T2N 1N4 (Canada); National Institute for Nanotechnology, 11421 Saskatchewan Dr. NW, Edmonton, Alberta T6G 2M9 (Canada); Hryciw, Aaron C. [National Institute for Nanotechnology, 11421 Saskatchewan Dr. NW, Edmonton, Alberta T6G 2M9 (Canada)

2014-04-07T23:59:59.000Z

62

Wideband saturable absorption in few-layer molybdenum diselenide (MoSe2) for Q-switching Yb-, Er- and Tm-doped fiber lasers  

E-Print Network [OSTI]

We fabricate a free-standing molybdenum diselenide (MoSe2) saturable absorber by embedding liquid-phase exfoliated few-layer MoSe2 flakes into a polymer film. The MoSe2-polymer composite is used to Q-switch fiber lasers based on ytterbium (Yb), erbium (Er) and thulium (Tm) gain fiber, producing trains of microsecond-duration pulses with kilohertz repetition rates at 1060 nm, 1566 nm and 1924 nm, respectively. Such operating wavelengths correspond to sub-bandgap saturable absorption in MoSe2, which is explained in the context of edge-states, building upon studies of other semiconducting transition metal dichalcogenide (TMD)-based saturable absorbers. Our work adds few-layer MoSe2 to the growing catalog of TMDs with remarkable optical properties, which offer new opportunities for photonic devices.

Woodward, R I; Runcorn, T H; Hu, G; Torrisi, F; Kelleher, E J R; Hasan, T

2015-01-01T23:59:59.000Z

63

Application of ultrasound in solvent extraction of nickel and gallium  

SciTech Connect (OSTI)

The effects of ultrasound on the rate of solvent extraction of nickel with Lix 65N and Lix 70, and gallium with Kelex 100 were investigated. These solvent extraction systems are noted by their sluggish nature. Low frequency (20 kHz) ultrasound increased the rates of extraction of nickel by factors of four to seven. The ultrasound had no effect on the final chemical equilibrium. Gallium extraction rates were enhanced with the use of ultrasound by as much as a factor of 15. Again, the ultrasound had no effect on extraction equilibrium. For both nickel and gallium, the enhanced rates were attributed to increased interfacial surface area associated with ultrasonically induced cavitation and microdroplet formation. The stability of the microdroplets permitted intermittent application of ultrasound with corresponding decreases in ultrasonic energy requirements. The lowest energy consumption was observed with short (0.25 to 5 s) bursts of high power (41 to 61 W) ultrasonic inputs. The study also provided insight into the factors that affect the complex extraction of gallium from sodium aluminate solutions. The rate controlling step was found to be the dehydration of the gallate ion, Ga(OH)4, and the first complex formation between gallium and Kelex 100. Sodium was found to enhance the extraction rate up to a point, beyond which increased concentration was detrimental. Increasing aluminum concentration was found to slow extraction rates. Modifiers and diluents were shown to markedly affect extraction rates even without ultrasound. Ketone modifiers, particularly 2-undecanone, when used with Kermac 470B or Escaid 200 diluents enhanced extraction rates of gallium to the point that the use of ultrasound provided no additional benefits. The positive effects of ketone modifiers for the solvent extraction of gallium had not been previously reported.

Pesic, B.

1996-07-01T23:59:59.000Z

64

Gallium based low-interaction anions  

DOE Patents [OSTI]

The present invention provides: a composition of the formula M.sup.+x (Ga(Y).sub.4.sup.-).sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; a composition of the formula (R).sub.x Q.sup.+ Ga(Y).sub.4.sup.- where Q is selected from the group consisting of carbon, nitrogen, sulfur, phosphorus and oxygen, each R is a ligand selected from the group consisting of alkyl, aryl, and hydrogen, x is an integer selected from the group consisting of 3 and 4 depending upon Q, and each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; an ionic polymerization catalyst composition including an active cationic portion and a gallium based weakly coordinating anion; and bridged anion species of the formula M.sup.+x.sub.y [X(Ga(Y.sub.3).sub.z ].sup.-y.sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, magnesium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, X is a bridging group between two gallium atoms, y is an integer selected from the group consisting 1 and 2, z is an integer of at least 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide.

King, Wayne A. (Santa Fe, NM); Kubas, Gregory J. (Santa Fe, NM)

2000-01-01T23:59:59.000Z

65

Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials  

DOE Patents [OSTI]

Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

Hogan, S.J.

1983-03-13T23:59:59.000Z

66

Interaction of a Liquid Gallium Jet with ISTTOK Edge Plasmas  

SciTech Connect (OSTI)

The use of liquid metals as plasma facing components in tokamaks has recently experienced a renewed interest stimulated by their advantages in the development of a fusion reactor. Liquid metals have been proposed to solve problems related to the erosion and neutronic activation of solid walls submitted to high power loads allowing an efficient heat exhaust from fusion devices. Presently the most promising candidate materials are lithium and gallium. However, lithium has a short liquid state range when compared, for example, with gallium that has essentially better thermal properties and lower vapor pressure. To explore further these properties, ISTTOK tokamak is being used to test the interaction of a free flying, fully formed liquid gallium jet with the plasma. The interacting, 2.3 mm diameter, jet is generated by hydrostatic pressure and has a 2.5 m/s flow velocity. The liquid metal injector has been build to allow the positioning of the jet inside the tokamak chamber, within a 13 mm range. This paper presents the first obtained experimental results concerning the liquid gallium jet-plasma interaction. A stable jet has been obtained, which was not noticeably affected by the magnetic field transients. ISTTOK has been successfully operated with the gallium jet without degradation of the discharge or a significant plasma contamination by liquid metal. This observation is supported by spectroscopic measurements showing that gallium radiation is limited to the region around the jet. Furthermore, the power deposited on the jet has been evaluated at different radial locations and the surface temperature increase estimated.

Gomes, R. B.; Fernandes, H.; Silva, C.; Pereira, T.; Figueiredo, J.; Carvalho, B.; Soares, A.; Duarte, P.; Varandas, C. [Associacao EURATOM/IST, Centro de Fusao Nuclear, Av. Rovisco Pais, 1049-001 Lisboa, Porugal (Portugal); Sarakovskis, A.; Lielausis, O.; Klyukin, A.; Platacis, E.; Tale, I. [Association EURATOM/University of Latvia, Institute of Solid State Physics, 8 Kengaraga Str., LV-1063 Riga (Latvia)

2008-04-07T23:59:59.000Z

67

Cost and Reliability Improvement for CIGS-Based PV on Flexible Substrate: May 24, 2006 -- July 31, 2010  

SciTech Connect (OSTI)

Global Solar Energy rapidly advances the cost and performance of commercial thin-film CIGS products using roll-to-roll processing on steel foil substrate in compact, low cost deposition equipment, with in-situ sensors for real-time intelligent process control. Substantial increases in power module efficiency, which now exceed 13%, are evident at GSE factories in two countries with a combined capacity greater than 75 MW. During 2009 the average efficiency of cell strings (3780 cm2) was increased from 7% to over 11%, with champion results exceeding 13% Continued testing of module reliability in rigid product has reaffirmed extended life expectancy for standard glass product, and has qualified additional lower-cost methods and materials. Expected lifetime for PV in flexible packages continues to increase as failure mechanisms are elucidated, and resolved by better methods and materials. Cost reduction has been achieved through better materials utilization, enhanced vendor and material qualification and selection. The largest cost gains have come as a result of higher cell conversion efficiency and yields, higher processing rates, greater automation and improved control in all process steps. These improvements are integral to this thin film PV partnership program, and all realized with the 'Gen2' manufacturing plants, processes and equipment.

Wiedeman, S.

2011-05-01T23:59:59.000Z

68

GALLIUM--1997 29.1 By Deborah A. Kramer  

E-Print Network [OSTI]

As is manufactured into optoelectronic devices (LED's, laser diodes, photodetectors, and solar cells) and integrated consumption. Optoelectronic devices accounted for 44% of domestic consumption, and the remaining 7% was used by imports, primarily high-purity gallium from France and low-purity material from Russia. Optoelectronic

69

Self- and zinc diffusion in gallium antimonide  

SciTech Connect (OSTI)

The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT) [Dvorak, (2001)]. Many of the findings which will be reported here were previously published in three journal articles. Hartmut Bracht was the lead author on two articles on self-diffusion studies in GaSb [Bracht, (2001), (2000)], while this report's author was the lead author on Zn diffusion results [Nicols, (2001)]. Much of the information contained herein can be found in those articles, but a more detailed treatment is presented here.

Nicols, Samuel Piers

2002-03-26T23:59:59.000Z

70

Sputtering of tin and gallium-tin clusters  

SciTech Connect (OSTI)

Tin and gallium-tin clusters have been produced by 4 keV Ar{sup +} ion bombardment of polycrystalline tin and the gallium-tin eutectic alloy and analyzed by time-of-flight mass spectrometry. The sputtered neutral species were photoionized with 193 nm (6.4 eV) excimer laser light. Neutral tin clusters containing up to 10 atoms and mixed gallium-tin clusters Ga{sub (n-m)}Sn{sub m} with n {<=} 4 for the neutrals and N {<=} 3 for the sputtered ionic species have been detected. Laser power density dependent intensity measurements, relative yields, and kinetic energy distributions have been measured. The abundance distributions of the mixed clusters have been found to be nonstatistical due to significant differences in the ionization efficiencies for clusters with equal nuclearity but different number of tin atoms. The results indicate that Ga{sub 2}Sn and Ga{sub 3}Sn like the all-gallium clusters have ionization potentials below 6.4 eV. In the case of Sn{sub 5}, Sn{sub 6}, GaSn and Ga{sub (n-m)}Sn{sub m} clusters with n=2 to 4 and m>1, the authors detect species that have sufficient internal energy to be one photon ionized despite ionization potentials that are higher 6.4 eV. The tin atom signal that is detected can be attributed to photofragmentation of dimers for both sputtering from polycrystalline tin and from the gallium-tin eutectic alloy.

Lill, T.; Calaway, W.F.; Ma, Z.; Pellin, M.J.

1994-08-01T23:59:59.000Z

71

Pair distribution function study on compression of liquid gallium  

SciTech Connect (OSTI)

Integrating a hydrothermal diamond anvil cell (HDAC) and focused high energy x-ray beam from the superconductor wiggler X17 beamline at the National Synchrotron Light Source (NSLS) at the Brookhaven National Laboratory (BNL), we have successfully collected high quality total x-ray scattering data of liquid gallium. The experiments were conducted at a pressure range from 0.1GPa up to 2GPa at ambient temperature. For the first time, pair distribution functions (PDF) for liquid gallium at high pressure were derived up to 10 {angstrom}. Liquid gallium structure has been studied by x-ray absorption (Di Cicco & Filipponi, 1993; Wei et al., 2000; Comez et al., 2001), x-ray diffraction studies (Waseda & Suzuki, 1972), and molecular dynamics simulation (Tsay, 1993; Hui et al., 2002). These previous reports have focused on the 1st nearest neighbor structure, which tells us little about the atomic arrangement outside the first shell in non- crystalline materials. This study focuses on the structure of liquid gallium and the atomic structure change due to compression. The PDF results show that the observed atomic distance of the first nearest neighbor at 2.78 {angstrom} (first G(r) peak and its shoulder at the higher Q position) is consistent with previous studies by x-ray absorption (2.76 {angstrom}, Comez et al., 2001). We have also observed that the first nearest neighbor peak position did not change with pressure increasing, while the farther peaks positions in the intermediate distance range decreased with pressure increasing. This leads to a conclusion of the possible existence of 'locally rigid units' in the liquid. With the addition of reverse Monte Carlo modeling, we have observed that the coordination number in the local rigit unit increases with pressure. The bulk modulus of liquid gallium derived from the volume compression curve at ambient temperature (300K) is 12.1(6) GPa.

Luo, Shengnian [Los Alamos National Laboratory; Yu, Tony [SUNY-SB; Chen, Jiuhua [SUNY-SB; Ehm, Lars [SUNY-SB; Guo, Quanzhong [SUNY-SB; Parise, John [SUNY-SB

2008-01-01T23:59:59.000Z

72

Metastable Electrical Characteristics of Polycrystalline Thin-Film Photovoltaic Modules upon Exposure and Stabilization: Preprint  

SciTech Connect (OSTI)

The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. The current-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65 degrees C; exposed in the dark under forward bias at 65 degrees C; and, finally, longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.

Deline, C. A.; del Cueto, J. A.; Albin, D. S.; Rummel, S. R.

2011-09-01T23:59:59.000Z

73

Spectroscopic Analysis of Impurity Precipitates in CdS Films  

SciTech Connect (OSTI)

Impurities in cadmium sulfide (CdS) films are a concern in the fabrication of copper (indium, gallium) diselenide (CIGS) and cadmium telluride (CdTe) photovoltaic devices. Devices incorporating chemical-bath-deposited (CBD) CdS are comparable in quality to devices incorporating purer CdS films grown using vacuum deposition techniques, despite the higher impurity concentrations typically observed in the CBD CdS films. In this paper, we summarize and review the results of Fourier transform infrared (FTIR), Auger, electron microprobe, and X-ray photoelectron spectroscopic (XPS) analyses of the impurities in CBD CdS films. We show that these impurities differ as a function of substrate type and film deposition conditions. We also show that some of these impurities exist as 10{sup 2} micron-scale precipitates.

Webb, J. D.; Keane, J.; Ribelin, R.; Gedvilas, L.; Swartzlander, A.; Ramanathan, K.; Albin, D. S.; Noufi, R.

1999-10-31T23:59:59.000Z

74

FTIR and FT-PL Spectroscopic Analysis of TPV Materials and Devices  

SciTech Connect (OSTI)

Impurities in cadmium sulfide (CdS) films are a concern in the fabrication of copper (indium, gallium) diselenide (CIGS) and cadmium telluride (CdTe) photovoltaic devices. Devices incorporating chemical-bath-deposited (CBD) CdS are comparable in quality to devices incorporating purer CdS films grown using vacuum deposition techniques, despite the higher impurity concentrations typically observed in the CBD CdS films. In this paper, we summarize and review the results of Fourier transform infrared (FTIR), Auger, electron microprobe, and X-ray photoelectron spectroscopic (XPS) analyses of the impurities in CBD CdS films. We show that these impurities differ as a function of substrate type and film deposition conditions. We also show that some of these impurities exist as 102 micron-scale precipitates.

Webb, J. D.; Gedvilas, L. M.; Olson, M. R.; Wu, X.; Duda, A.; Wanlass, M. W.; Jones, K. M.

1998-10-28T23:59:59.000Z

75

E-Print Network 3.0 - arsenide- gallium instrument Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: of gallium arsenide, a semiconductor, which is used in advanced optoelectronics, lasers, microwave circuits... , and solar cells. To determine material...

76

Neutron detection using boron gallium nitride semiconductor material  

SciTech Connect (OSTI)

In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN) semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN) samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to ?-rays but poor sensitivity to ?-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after ?-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

Atsumi, Katsuhiro [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Inoue, Yoku; Nakano, Takayuki, E-mail: ttnakan@ipc.shizuoka.ac.jp [Department of Electrical and Materials Science, Graduate School of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561 (Japan); Mimura, Hidenori; Aoki, Toru [Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011 (Japan)

2014-03-01T23:59:59.000Z

78

Layer-By-Layer Self-Assembly of CIGS Nanoparticles and Polymers for All-Solution Processable Low-Cost, High-Efficiency Solar Cells  

E-Print Network [OSTI]

-Cost, High-Efficiency Solar Cells Tung Ho1 , Robert Vittoe3 , Namratha Kakumanu2 , Sudhir Shrestha2-Purdue University Indianapolis (IUPUI), Indianapolis, IN 46202 Thin film solar cells made from copper indium gallium thereby affecting solar cell efficiency. This research aims to study various polymer materials to replace

Zhou, Yaoqi

79

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells  

E-Print Network [OSTI]

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A. Rockettb , M. Edoffa , L. Stolta a A°ngstro¨m Solar Center, Uppsala University, P.O. Box 534, SE-751 21 Abstract The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been

Rockett, Angus

80

Two-photon photovoltaic effect in gallium arsenide Jeff Chiles,1  

E-Print Network [OSTI]

Two-photon photovoltaic effect in gallium arsenide Jichi Ma,1 Jeff Chiles,1 Yagya D. Sharma,2 214669); published September 4, 2014 The two-photon photovoltaic effect is demonstrated in gallium; (230.0250) Optoelectronics; (040.5350) Photovoltaic; (130.4310) Nonlinear. http://dx.doi.org/10.1364/OL

Fathpour, Sasan

Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Gallium/aluminum nanocomposite material for nonlinear optics and nonlinear plasmonics  

E-Print Network [OSTI]

Gallium/aluminum nanocomposite material for nonlinear optics and nonlinear plasmonics A. V penetration of gallium into an aluminum film. These composite films form mirrorlike interfaces with silica optics and active plasmonics. The material is a polycrystalline aluminum film on a silica sub- strate

Zheludev, Nikolay

82

Synthesis and use of (polyfluoroaryl)fluoroanions of aluminum, gallium and indium  

DOE Patents [OSTI]

Salts of (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are described. The (polyfluoroaryl)fluoroanions have the formula [ER'R"R'"F].sup..crclbar. wherein E is aluminum, gallium, or indium, wherein F is fluorine, and wherein R', R", and R'" is each a fluorinated phenyl, fluorinated biphenyl, or fluorinated polycyclic group.

Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

2000-01-01T23:59:59.000Z

83

IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 2, APRIL 2012 123 Gallium Arsenide Solar Cell Absorption  

E-Print Network [OSTI]

IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 2, APRIL 2012 123 Gallium Arsenide Solar Cell Absorption--Gallium arsenide, nanospheres, photovoltaic systems, whispering gallery modes (WGMs). I. INTRODUCTION THE route as the active layer is thinned [2]. Thin-film photovoltaics offer the possibility to significantly reduce

Grandidier, Jonathan

84

Synthesis and characterization of visible emission from rare-earth doped aluminum nitride, gallium nitride and gallium aluminum nitride powders and thin films  

E-Print Network [OSTI]

of the Nitrides of Aluminum and Gallium," J. Electrochem.1) 24 (1962). G. Long and L. M. Foster, "Aluminum Nitride, aRefractory for Aluminum to 2000°C," J. Am. Ceram. Soc. ,

Tao, Jonathan Huai-Tse

2010-01-01T23:59:59.000Z

85

Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism inS-4500II FieldVacancy-Induced Nanoscale Wire Structure in Gallium

86

Gallium phosphide high-temperature bipolar junction transistor  

SciTech Connect (OSTI)

Preliminary results are reported on the development of a high-temperature (> 350/sup 0/C) gallium phosphide bipolar junction transistor (BJT) for goethermal and other energy applications. This four-layer p/sup +/n/sup -/pp/sup +/ structure was fromed by liquid phase epitaxy using a supercooling technique to insure uniform nucleation of the thin layers. Magnesium was used as the p-type dopant to avoid excessive out-diffusion into the lightly doped base. By appropriate choice of electrodes, the device may also be driven as an n-channel junction field-effect transistor. The gallium phosphide BJT is observed to have a common-emitter current gain peaking in the range of 6 to 10 (for temperatures from 20/sup 0/C to 400/sup 0/C) and a room-temperature, punchthrough-limited, collector-emitter breakdown voltage of approximately -6V. Other parameters of interest include an f/sub/ = 400 KHz (at 20/sup 0/C) and a collector base leakage current = 200 ..mu..A (at 350/sup 0/C).

Zipperian, T.E.; Dawson, L.R.; Caffin, R.J.

1981-03-01T23:59:59.000Z

87

DuPont Technology Breaks Away From Glass | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

technology that will let manufacturers of copper indium gallium selenide, or CIGS, solar cells and organic light emitting diodes, or OLED, displays protect products with...

88

Specific interaction of fluoride ions with aluminum and gallium solvates in an ethylene glycol solutions  

SciTech Connect (OSTI)

The interaction of aluminum chloride and gallium chloride with KF in ethylene glycol solutions with F:M/sup 3 +/ mole ratios approximately equal to 2 includes a step involving the formation of fluorine-containing species, in which the fluoride ions are held in the outer sphere of ethylene glycol solvates of aluminum and gallium. Complexes based on hexacoordinate solvates predominate in the solutions of aluminum, while in the case of gallium, in contrast to aluminum, the coexistence of tetra- and hexacoordinate complexes is characteristic. The configurational equilibrium in the solutions of gallium is one of the causes of the structurization of the solutions, i.e., polymerization due to the formation of H bonds between the fluoride ions and the coordinated ethylene glycol molecules.

Petrosyants, S.P.; Tsabel', E.R.; Buslaev, Yu.A.

1986-01-01T23:59:59.000Z

89

GALLIUM--2002 29.1 References that include a section mark () are found in the Internet  

E-Print Network [OSTI]

consumed in the United States was in the form of GaAs. GaAs was manufactured into optoelectronic devices application for gallium, with 46% of total consumption. Optoelectronic devices accounted for 42% of domestic

90

Fabrication of optoelectronic microwave linear and ring resonators on a gallium arsenide substrate  

E-Print Network [OSTI]

FABRICATION OF OPTOELECTRONIC MICROWAVE LINEAR AND RING RESONATORS ON A GALLIUM ARSENIDE SUBSTRATE A Thesis by CHUN-LIANG YEH Submitted to the Office of Graduate Studies of Texas ASM University in partial fulfillment of the requirements... for the degree of MASTER OF SCIENCE August 1993 Major Subject: Electrical Engineering FABRICATION OF OPTOELECTRONIC MICROWAVE LINEAR AND RING RESONATORS ON A GALLIUM ARSENIDE SUBSTRATE A Thesis by CHUN-LIANG YEH Approved as to style and content by: Mark...

Yeh, Chun-Liang

1993-01-01T23:59:59.000Z

91

First Results of the Testing of the Liquid Gallium Jet Limiter Concept for ISTTOK  

SciTech Connect (OSTI)

The use of liquid metals as plasma facing components in tokamaks has recently experienced a renewed interest stimulated by their advantages to the development of a fusion reactor. Liquid metals have been proposed to solve problems related to the erosion and neutronic activation of solid walls submitted to high power loads allowing an efficient heat exhaustion from fusion devices. Presently the most promising materials are Lithium and Gallium. ISTTOK, a small size tokamak, will be used to test the behavior of a liquid Gallium jet in the vacuum chamber and its influence on the plasma. This paper presents a description of the conceived setup as well as experimental results. The liquid Gallium jet is generated by hydrostatic pressure and injected in a radial position close to a moveable stainless steel limiter. Both the jet and the limiter positions are variable allowing for a controlled exposure of the liquid Gallium to the edge plasma. The main components of the Gallium loop are a MHD pump, the liquid metal injector and a filtering system. The MHD pump is of the induction type, based on rotating permanent magnets. The injector is build from a stainless steel pipe ended by a shaping nozzle. A setup has been developed to introduce oxide-free Gallium inside the loop's main supply tank. Raw liquid metal is placed inside a chamber heated and degassed under high vacuum while clean Gallium is extracted from the main body of the liquefied metal. Prior to installation on the tokamak, the experimental rig has been implemented using a Pyrex tube as test chamber to investigate the stability of the Gallium jet and its break-up length for several nozzle sizes. Results are presented in this paper. This rig was also useful to assess the behavior of the overall implemented apparatus.

Gomes, R. B.; Fernandes, H.; Silva, C.; Borba, D.; Carvalho, B.; Varandas, C. [Associacao EURATOM/IST, Centro de FuSao Nuclear, Av. Rovisco Pais, 1049-001 Lisbon (Portugal); Lielausis, O.; Klyukin, A.; Platacis, E.; Mikelsons, A.; Platnieks, I. [Association EURATOM/University of Latvia, Institute of Physics, 32 Miera Str., Salaspils, LV-2169 (Latvia)

2006-12-04T23:59:59.000Z

92

Study of Magnetohydrodynamic Surface Waves on Liquid Gallium  

SciTech Connect (OSTI)

Magnetohydrodynamic (MHD) surface waves on liquid gallium are studied theoretically and experimentally in the small magnetic Reynolds number limit. A linear dispersion relation is derived when a horizontal magnetic field and a horizontal electric current is imposed. No wave damping is found in the shallow liquid limit while waves always damp in the deep liquid limit with a magnetic field parallel to the propagation direction. When the magnetic field is weak, waves are weakly damped and the real part of the dispersion is unaffected, while in the opposite limit waves are strongly damped with shortened wavelengths. In a table-top experiment, planar MHD surface waves on liquid gallium are studied in detail in the regime of weak magnetic field and deep liquid. A non-invasive diagnostic accurately measures surface waves at multiple locations by reflecting an array of lasers off the surface onto a screen, which is recorded by an Intensified-CCD camera. The measured dispersion relation is consistent with the linear theory with a reduced surface tension likely due to surface oxidation. In excellent agreement with linear theory, it is observed that surface waves are damped only when a horizontal magnetic field is imposed parallel to the propagation direction. No damping is observed under a perpendicular magnetic field. The existence of strong wave damping even without magnetic field suggests the importance of the surface oxide layer. Implications to the liquid metal wall concept in fusion reactors, especially on the wave damping and a Rayleigh-Taylor instability when the Lorentz force is used to support liquid metal layer against gravity, are discussed.

Hantao Ji; William Fox; David Pace; H.L. Rappaport

2004-05-13T23:59:59.000Z

93

Study of liquid gallium at high pressure using synchrotron x-ray  

SciTech Connect (OSTI)

Liquid gallium has been studied at high pressure up to 2 GPa and ambient temperature in a diamond anvil cell using high energy synchrotron x-ray beam. The total x-ray scattering data of liquid gallium were collected up to Q = 12 A{sup -1} and analyzed using pair distribution functions (PDF). The results indicate that the first nearest neighbor peak and second nearest neighbor (shoulder) peak of PDF in liquid gallium does not change with pressure, whereas the higher order (i.e., third and fourth) nearest neighbor peaks shift towards shorter distance with increasing pressure. Reverse Monte Carlo modeling based on the observed data shows that the coordination number in the liquid gallium increases with pressure from 10.5 at 0.3 GPa to 11.6 at 2 GPa. An atomic arrangement similar to the crystalline phase of Ga(II) with coordination number of 12 is proposed for the locally dense-packed rigid unit in liquid gallium. The volume compression data derived from the structure modeling yield a bulk modulus of 12.1(6) GPa for liquid gallium.

Yu, Tony; Guo Quanzhong; Parise, John [Department of Geosciences, Mineral Physics Institute, Stony Brook University, Stony Brook, New York 11794-2100 (United States); Chen Jiuhua [Department of Geosciences, Mineral Physics Institute, Stony Brook University, Stony Brook, New York 11794-2100 (United States); Department of Mechanical and Materials Engineering, Center for the Study of Matters at Extreme Conditions, Florida International University, Miami, Florida 33199 (United States); Ehm, Lars [Department of Geosciences, Mineral Physics Institute, Stony Brook University, Stony Brook, New York 11794-2100 (United States); National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973-5000 (United States); Huang Shu [Department of Mechanical and Materials Engineering, Center for the Study of Matters at Extreme Conditions, Florida International University, Miami, Florida 33199 (United States); Luo Shengnian [Physics Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

2012-06-01T23:59:59.000Z

94

High-Temperature Decomposition of Brønsted Acid Sites in Gallium-Substituted Zeolites  

SciTech Connect (OSTI)

The dehydroxylation of Broensted acid sites (BAS) in Ga-substituted zeolites was investigated at temperatures up to 850 C using X-ray absorption spectroscopy (XAS), Fourier transform infrared spectroscopy (FTIR), and mass spectrometry-temperature programmed desorption (MS-TPD). X-ray absorption near-edge spectroscopy (XANES) revealed that the majority of gallium has tetrahedral coordination even after complete dehydroxylation. The interatomic gallium-oxygen distance and gallium coordination number determined by extended X-ray absorption fine structure (EXAFS) are consistent with gallium in tetrahedral coordination at low T (< 550 C). Upon heating Ga-Beta and Ga-ZSM5 to 850 C, analysis of the EXAFS showed that 70 and 80% of the gallium was still in tetrahedral coordination. The remainder of the gallium was found to be in octahedral coordination. No trigonal Ga atoms were observed. FTIR measurements carried out at similar temperatures show that the intensity of the OH vibration due to BAS has been eliminated. MS-TPD revealed that hydrogen in addition to water evolved from the samples during dehydroxylation. This shows that dehydrogenation in addition to dehydration is a mechanism that contributes to BAS decomposition. Dehydrogenation was further confirmed by exposing the sample to hydrogen to regenerate some of the BAS as monitored by FTIR and MS-TPD.

K Al-majnouni; N Hould; W Lonergan; D Vlachos; R Lobo

2011-12-31T23:59:59.000Z

95

By Deborah A. Kramer No gallium production was reported in the McDonnell Douglas Corp. reportedly will world producers were Australia, Germany, and  

E-Print Network [OSTI]

facility in optoelectronic devices [light-emitting diodes France from stockpiled crude gallium produced, and in 1994. Although the total quantity of gallium used in optoelectronic devices increased, its percentage

96

(Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon  

DOE Patents [OSTI]

The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

2002-01-01T23:59:59.000Z

97

(Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon  

DOE Patents [OSTI]

The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

2001-01-01T23:59:59.000Z

98

Electron backscatter diffraction of plutonium-gallium alloys  

SciTech Connect (OSTI)

At Los Alamos National Laboratory a recent experimental technique has been developed to characterize reactive metals, including plutonium arid cerium, using electron backscatter diffraction (EBSD). Microstructural characterization of plutonium and its alloys by EBSD had been previously elusive primarily because of the extreme toxicity and rapid surface oxidation rate associated with plutonium metal. The experimental techniques, which included ion-sputtering the metal surface using a scanning auger microprobe (SAM) followed by vacuum transfer of the sample from the SAM to the scanning electron microscope (SEM), used to obtain electron backscatter diffraction Kikuchi patterns (EBSPs) and orientation maps for plutonium-gallium alloys are described and the initial microstructural observations based on the analysis are discussed. Combining the SEM and EBSD observations, the phase transformation behavior between the {delta} and {var_epsilon} structures was explained. This demonstrated sample preparation and characterization technique is expected to be a powerful means to further understand phase transformation behavior, orientation relationships, and texlure in the complicated plutonium alloy systems.

Boehlert, C. J. (Carl J.); Zocco, T. G. (Thomas G.); Schulze, R. K. (Roland K.); Mitchell, J. N. (Jeremy N.); Pereyra, R. A. (Ramiro A.)

2002-01-01T23:59:59.000Z

99

Change in the current-carrier concentration upon doping PbTe with gallium  

SciTech Connect (OSTI)

Upon doping PbTe with gallium, both high-resistivity samples with intrinsic conductivity and low-resistivity samples with electronic conductivity (n/sub e/ = 10/sup 18/ cm/sup -3/) are produced on the PbTe-GaTe section. A thorough investigation of the dependence of the thermo-emf of Pb/sub 1-x/Ga/sub x/Te on the excess Pb and Te side showed the presence of a wide region with intrinsic conductivity. The experimental data can be explained by the fact that impure gallium in PbTe has negative Hubbard energy and stabilizes the Fermi level almost at the center of the forbidden band. At high gallium concentrations, Ga/sub 2/Te/sub 3/ precipitates at first, and then GaTe precipitates as well. The lead forming in excess transforms Ga/sup 3 +/ to Ga/sup +/, which produces the electronic conductivity in the material.

Bushmarina, G.S.; Gruzinov, B.F.; Drabkin, I.A.; Lev, E.Ya.; Moizhes, B.Ya; Suprun, S.G.

1987-07-01T23:59:59.000Z

100

Flexible Ultra Moisture Barrier Film for Thin-Film Photovoltaic Applications  

SciTech Connect (OSTI)

Flexible Thin-film photovoltaic (TFPV) is a low cost alternative to incumbent c-Si PV products as it requires less volume of costly semiconductor materials and it can potentially reduce installation cost. Among the TFPV options, copper indium gallium diselenide (CIGS) has the highest efficiency and is believed to be one of the most attractive candidates to achieve PV cost reduction. However, CIGS cells are very moisture sensitive and require module water vapor transmission rate (WVTR) of less than 1x10-4 gram of water per square meter per day (g-H2O/m2/day). Successful development and commercialization of flexible transparent ultra moisture barrier film is the key to enable flexible CIGS TFPV products, and thus enable ultimate PV cost reduction. At DuPont, we have demonstrated at lab scale that we can successfully make polymer-based flexible transparent ultra moisture barrier film by depositing alumina on polymer films using atomic layer deposition (ALD) technology. The layer by layer ALD approach results in uniform and amorphous structure which effectively reduces pinhole density of the inorganic coating on the polymer, and thus allow the fabrication of flexible barrier film with WVTR of 10-5 g-H2O/m2/day. Currently ALD is a time-consuming process suitable only for high-value, relatively small substrates. To successfully commercialize the ALD-on-plastic technology for the PV industry, there is the need to scale up this technology and improve throughput. The goal of this contract work was to build a prototype demonstrating that the ALD technology could be scaled-up for commercial use. Unfortunately, the prototype failed to produce an ultra-barrier film by the close of the project.

David M. Dean

2012-10-30T23:59:59.000Z

Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Percolation of gallium dominates the electrical resistance of focused ion beam deposited metals  

SciTech Connect (OSTI)

Metal deposition through focused ion beam (FIB) based systems is thought to result in material composed of the primary metal from the metallo-organic precursor in addition to carbon, oxygen, and gallium. We determined, through electrical resistance and chemical composition measurements on a wide range of FIB deposited platinum and tungsten lines, that the gallium ion (Ga{sup +}) concentration in the metal lines plays the dominant role in controlling the electrical resistivity. Effective medium theory, based on McLachlan's formalisms, was used to describe the relationship between the Ga{sup +} concentration and the corresponding resistivity.

Faraby, H. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States); DiBattista, M. [Qualcomm Technologies Incorporated, San Diego, California 92121 (United States); Bandaru, P. R., E-mail: pbandaru@ucsd.edu [Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2014-04-28T23:59:59.000Z

102

Results of the Gallium-Clad Phase 3 and Phase 4 tasks (canceled prior to completion)  

SciTech Connect (OSTI)

This report summarizes the results of the Gallium-Clad interactions Phase 3 and 4 tasks. Both tasks were to involve examining the out-of-pile stability of residual gallium in short fuel rods with an imposed thermal gradient. The thermal environment was to be created by an electrical heater in the center of the fuel rod and coolant flow on the rod outer cladding. Both tasks were canceled due to difficulties with fuel pellet fabrication, delays in the preparation of the test apparatus, and changes in the Fissile Materials Disposition program budget.

Morris, R.N.

1998-08-01T23:59:59.000Z

103

Millimeter wave ferromagnetic resonance in gallium-substituted ?-iron oxide  

SciTech Connect (OSTI)

In millimeter wave frequency range, hexagonal ferrites with high uniaxial anisotropic magnetic fields are used as absorbers. These ferrites include M-type barium ferrite (BaFe{sub 12}O{sub 19}) and strontium ferrite (SrFe{sub 12}O{sub 19}), which have natural ferromagnetic resonant frequency range from 40 GHz to 60?GHz. However, the higher frequency range lacks suitable materials that support the higher frequency ferromagnetic resonance. A new series of gallium-substituted ?-iron oxides (?-Ga{sub x}Fe{sub 2?x}O{sub 3}) are synthesized which have ferromagnetic resonant frequencies appearing over the frequency range 30 GHz–150 GHz. The ?-Ga{sub x}Fe{sub 2?x}O{sub 3} is synthesized by the combination of reverse micelle and sol-gel techniques or the sol-gel method only. The particle sizes are observed to be smaller than 100 nm. In this paper, the free space magneto-optical approach has been employed to study these newly developed ?-Ga{sub x}Fe{sub 2?x}O{sub 3} particles in millimeter waves. This technique enables to obtain precise transmission spectra to determine the dielectric and magnetic properties of both isotropic and anisotropic ferrites in the millimeter wave frequency range from a single set of direct measurements. The transmittance and absorbance spectra of ?-Ga{sub x}Fe{sub 2?x}O{sub 3} are shown in this paper. Strong ferromagnetic resonances at different frequencies determined by the x parameter are found.

Chao, Liu, E-mail: liu.chao@tufts.edu; Afsar, Mohammed N. [Department of Electrical and Computer Engineering, Tufts University, Medford, Massachusetts 02155 (United States); Ohkoshi, Shin-ichi [Department of Chemistry, School of Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan)

2014-05-07T23:59:59.000Z

104

Optical, electrical, and solar energy-conversion properties of gallium arsenide nanowire-array  

E-Print Network [OSTI]

Optical, electrical, and solar energy-conversion properties of gallium arsenide nanowire, and will aid in the design and optimization of nanowire-based systems for solar energy-conversion applications, and the photoelectrochemical energy-conversion properties of GaAs nanowire arrays were evaluated in contact with one

Zhou, Chongwu

105

GALLIUM--2003 28.1 References that include a section mark () are found in the Internet  

E-Print Network [OSTI]

in the United States was in the form of GaAs. GaAs was manufactured into optoelectronic devices (LEDs, laser diodes, photodetectors, and solar cells) and ICs. ICs and optoelectronic devices each accounted for 41) and optoelectronic devices [mostly laser diodes and light- emitting diodes (LEDs)]. Estimated crude gallium

106

Bulk measurement of copper and sodium content in CuIn(0.7)Ga(0.3)Se(2) (CIGS) solar cells with nanosecond pulse length laser induced breakdown spectroscopy (LIBS)  

E-Print Network [OSTI]

In this work, we show that laser induced breakdown spectroscopy (LIBS) with a nanosecond pulse laser can be used to measure the copper and sodium content of CuIn(0.7)Ga(0.3)Se(2) (CIGS) thin film solar cells on molybdenum. This method has four significant advantages over methods currently being employed: the method is inexpensive, measurements can be taken in times on the order of one second, without high vacuum, and at distances up to 5 meters or more. The final two points allow for in-line monitoring of device fabrication in laboratory or industrial environments. Specifically, we report a linear relationship between the copper and sodium spectral lines from LIBS and the atomic fraction of copper and sodium measured via secondary ion mass spectroscopy (SIMS), discuss the ablation process of this material with a nanosecond pulse laser compared to shorter pulse duration lasers, and examine the depth resolution of nanosecond pulse LIBS.

Kowalczyk, Jeremy M D; DeAngelis, Alexander; Kaneshiro, Jess; Mallory, Stewart A; Chang, Yuancheng; Gaillard, Nicolas

2013-01-01T23:59:59.000Z

107

Fast neutron scattering on Gallium target at 14.8 MeV  

E-Print Network [OSTI]

Benchmarking of evaluated nuclear data libraries was performed for $\\sim 14.8$ MeV neutrons on Gallium targets. The experiments were performed at China Institute of Atomic Energy(CIAE). Solid samples of natural Gallium (3.2 cm and 6.4 cm thick) were bombarded by $\\sim 14.8$ MeV neutrons and leakage neutron energy spectra were measured at 60$^{\\circ}$ and 120$^{\\circ}$. The measured spectra are rather well reproduced by MCNP-4C simulations with the CENDL-3.1, ENDF/B-VII and JENDL-4.0 evaluated nuclear data libraries, except for the inelastic contributions around $E_{n} = 10-13$ MeV. All three libraries significantly underestimate the inelastic contributions. The inelastic contributions are further studied, using the Talys simulation code and the experimental spectra are reproduced reasonably well in the whole energy range by the Talys calculation, including the inelastic contributions.

R. Han; R. Wada; Z. Chen; Y. Nie; X. Liu; S. Zhang; P. Ren; B. Jia; G. Tian; F. Luo; W. Lin; J. Liu; F. Shi; M. Huang; X. Ruan; J. Ren; Z. Zhou; H. Huang; J. Bao; K. Zhang; B. Hu

2014-11-03T23:59:59.000Z

108

Fast neutron scattering on Gallium target at 14.8 MeV  

E-Print Network [OSTI]

Benchmarking of evaluated nuclear data libraries was performed for $\\sim 14.8$ MeV neutrons on Gallium targets. The experiments were performed at China Institute of Atomic Energy(CIAE). Solid samples of natural Gallium (3.2 cm and 6.4 cm thick) were bombarded by $\\sim 14.8$ MeV neutrons and leakage neutron energy spectra were measured at 60$^{\\circ}$ and 120$^{\\circ}$. The measured spectra are rather well reproduced by MCNP-4C simulations with the CENDL-3.1, ENDF/B-VII and JENDL-4.0 evaluated nuclear data libraries, except for the inelastic contributions around $E_{n} = 10-13$ MeV. All three libraries significantly underestimate the inelastic contributions. The inelastic contributions are further studied, using the Talys simulation code and the experimental spectra are reproduced reasonably well in the whole energy range by the Talys calculation, including the inelastic contributions.

Han, R; Chen, Z; Nie, Y; Liu, X; Zhang, S; Ren, P; Jia, B; Tian, G; Luo, F; Lin, W; Liu, J; Shi, F; Huang, M; Ruan, X; Ren, J; Zhou, Z; Huang, H; Bao, J; Zhang, K; Hu, B

2014-01-01T23:59:59.000Z

109

Distinctive Signature of Indium Gallium Nitride Quantum Dot Lasing in Microdisks Cavities  

E-Print Network [OSTI]

Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light matter interactions and realize practical devices such as efficient light emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low threshold lasers have not been clearly demonstrated. This work seeks to better understand the reasons for these limitations by focusing on the simpler, limited-mode microdisk cavities, and by carrying out comparisons of lasing dynamics in those cavities using varying gain media including InGaN quantum wells, fragmented quantum wells, and a combination of fragmented quantum wells with quantum dots. For each gain medium, we utilize the distinctive, high quality (Q~5500) modes of the cavities, and the change in the highest ...

Woolf, Alexander; Aharanovich, Igor; Zhu, Tongtong; Niu, Nan; Wang, Danqing; Oliver, Rachel A; Hu, Evelyn L

2014-01-01T23:59:59.000Z

110

(Polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon  

DOE Patents [OSTI]

The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interefere in the ethylene polymerization process, while affecting the the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

2001-01-01T23:59:59.000Z

111

Gallium Lighting, LLC, Accepts Inaugural Position on the Industry Advisory Board of UC-Light Center to Help Bring Wireless Data  

E-Print Network [OSTI]

Gallium Lighting, LLC, Accepts Inaugural Position on the Industry Advisory Board of UC-Light Center to Help Bring Wireless Data Communications Capabilities to LED Lights Fayetteville, GA ­ February 10, 2011 ­Gallium Lighting, LLC, announced today it has accepted an inaugural position

112

Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors  

SciTech Connect (OSTI)

In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

Yang, Jyun-Bao; Chen, Yu-Ting; Chu, Ann-Kuo [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Huang, Jheng-Jie; Chen, Yu-Chun; Tseng, Hsueh-Chih [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Sze, Simon M. [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China)

2014-04-14T23:59:59.000Z

113

Synthesis of graphene nanoribbons from amyloid templates by gallium vapor-assisted solid-phase graphitization  

SciTech Connect (OSTI)

Single- and double-layer graphene nanoribbons (GNRs) with widths of around 10?nm were synthesized directly onto an insulating substrate by solid-phase graphitization using a gallium vapor catalyst and carbon templates made of amyloid fibrils. Subsequent investigation revealed that the crystallinity, conductivity, and carrier mobility were all improved by increasing the temperature of synthesis. The carrier mobility of the GNR synthesized at 1050?°C was 0.83 cm{sup 2}/V?s, which is lower than that of mechanically exfoliated graphene. This is considered to be most likely due to electron scattering by the defects and edges of the GNRs.

Murakami, Katsuhisa, E-mail: k.murakami@bk.tsukuba.ac.jp; Dong, Tianchen; Kajiwara, Yuya; Takahashi, Teppei; Fujita, Jun-ichi [Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Tsukuba Research Center for Interdisciplinary Materials Science, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Hiyama, Takaki; Takai, Eisuke; Ohashi, Gai; Shiraki, Kentaro [Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)

2014-06-16T23:59:59.000Z

114

Anionic Gallium-Based Metal;#8722;Organic Framework and Its Sorption and Ion-Exchange Properties  

SciTech Connect (OSTI)

A gallium-based metal-organic framework Ga{sub 6}(C{sub 9}H{sub 3}O{sub 6}){sub 8} {center_dot} (C{sub 2}H{sub 8}N){sub 6}(C{sub 3}H{sub 7}NO){sub 3}(H{sub 2}O){sub 26} [1, Ga{sub 6}(1,3,5-BTC){sub 8} {center_dot} 6DMA {center_dot} 3DMF {center_dot} 26H{sub 2}O], GaMOF-1; BTC = benzenetricarboxylate/trimesic acid and DMA = dimethylamine, with space group I{bar 4}3d, a = 19.611(1) {angstrom}, and V = 7953.4(6) {angstrom}{sup 3}, was synthesized using solvothermal techniques and characterized by synchrotron-based X-ray microcrystal diffraction. Compound 1 contains isolated gallium tetrahedra connected by the organic linker (BTC) forming a 3,4-connected anionic porous network. Disordered positively charged ions and solvent molecules are present in the pore, compensating for the negative charge of the framework. These positively charged molecules could be exchanged with alkali-metal ions, as is evident by an ICP-MS study. The H{sub 2} storage capacity of the parent framework is moderate with a H{sub 2} storage capacity of {approx}0.5 wt % at 77 K and 1 atm.

Banerjee, Debasis; Kim, Sun Jin; Wu, Haohan; Xu, Wenqian; Borkowski, Lauren A.; Li, Jing; Parise, John B. (Kwangju); (Rutgers); (SBU)

2012-04-30T23:59:59.000Z

115

Dynamics of formation of photoresponse in a detector structure made of gallium arsenide  

SciTech Connect (OSTI)

The influence of capture effects on the characteristics of detectors of the ionizing radiation based on semi-insulating gallium arsenide is considered. Generation of nonequilibrium electrons and holes along the entire thickness of the active region was performed under illumination with an infrared light-emitting diode with a wavelength of 0.9 {mu}m. In this case, the situation emerging in the device structure under the effect of X-ray radiation or a high-energy electron beam was simulated. It is shown that the variation in the shape of the output signal with time in this case is caused by variation in the electric field profile due to the capture of holes at deep centers in gallium arsenide. An absolutely different distribution of the electric field emerges in the structure under irradiation of a semitransparent cathode of the structure with a red light-emitting diode, emission of which penetrates into the active region for mere 1 {mu}m. In this case, the transformation of the electric field is caused by the capture of electrons. Under the prolonged effect of such radiation, a space-charge-limited current mode emerges in the device.

Ayzenshtat, G. I., E-mail: ayzen@mail.tomsknet.ru; Lelekov, M. A.; Tolbanov, O. P. [Tomsk State University (Russian Federation)

2008-04-15T23:59:59.000Z

116

Simulation assisted design of a gallium phosphide np photovoltaic junction Charles R. Allen, Jong-Hyeok Jeon , Jerry M. Woodall  

E-Print Network [OSTI]

University, 1205 W State Street, West Lafayette, IN, USA a r t i c l e i n f o Article history: Received 27 February 2010 Keywords: Gallium phosphide Solar cell Multi-junction CPV Simulation a b s t r a c with measurements of the dark and light response. The light current was measured under an illumination of air mass

Woodall, Jerry M.

117

Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride by metalorganic vapor-phase epitaxy  

E-Print Network [OSTI]

Formation of etch pits during carbon doping of gallium arsenide with carbon tetrachloride to examine the effects of carbon tetrachloride concentration and temperature on the morphology of carbon with increasing carbon tetrachloride concentration. Step bunching and pinning was observed at a IV/III ratio

Li, Lian

118

NREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells (Fact Sheet)  

SciTech Connect (OSTI)

Researchers at the National Renewable Energy Laboratory (NREL) are finding new ways to manufacture thin-film solar cells made from copper, indium, gallium, and selenium - called CIGS cells - that are different than conventional CIGS solar cells. Their use of high-temperature glass, designed by SCHOTT AG, allows higher fabrication temperatures, opening the door to new CIGS solar cells employing light-absorbing materials with wide 'bandgaps.'

Not Available

2012-09-01T23:59:59.000Z

119

E-Print Network 3.0 - all-solid-state dye-sensitized solar Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

spectrum Poly-Si CdTe CIGS (Copper-Indium-Gallium-Selenide) Organic and Dye-Sensitized Solar Cells 12;Cd... ;Light Concentration using Nanoparticle Plasmon Resonances 12;Dye...

120

Local environment and composition of magnesium gallium layered double hydroxides determined from solid-state 1H and 71Ga NMR spectroscopy  

SciTech Connect (OSTI)

Ordering of gallium(III) in a series of magnesium gallium layered double hydroxides (LDH’s), [Mg1-xGax(OH)2(NO3)x yH2O], was determined using solid-state 1H and 71Ga NMR spectroscopy. Depletion of Ga in these LDH’s is demonstrated to be the result of soluble [Ga(OH)4]-complexes formed during synthesis.

Petersen, Line B.; Lipton, Andrew S.; Zorin, Vadim; Nielsen, Ulla Gro

2014-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Catalytic and physicochemical properties of aluminoplatinum catalysts modified with indium and gallium  

SciTech Connect (OSTI)

Aluminoplatinum catalysts (APC) are widely used in transformations of hydrocarbons, particularly in reforming of gasoline fractions and dehydrogenation of higher normal paraffins. Promotion of APC with indium and gallium increases their activity and stability in the dehydrogenation of paraffins. Introduction of group III elements in APC inhibits coke formation during dehydrogenation and prevents blocking of the surface of the Pt. The change in the catalytic properties of APC modified with In is due to the partial transfer of the electron density from Pt to In. Both APC with In and Ga additives and monometallic catalysts were studied in the present article by the methods of IR spectroscopy and adsorption. In addition to traditional transmission IR spectroscopy, IR spectroscopy in diffusely scattered light was used, which permits conducting both spectral and adsorption measurements on the same samples.

Zaitsev, A.V.; Tyupaev, A.P.; Borovkov, V.Yu.; Timofeeva, E.A.; Isatulyants, G.V.; Kazanskii, B.B.

1986-10-10T23:59:59.000Z

122

The status of the solar neutrino problem and the Russian-American gallium experiment (SAGE)  

SciTech Connect (OSTI)

Perhaps the most outstanding discrepancy between prediction and measurements in current particle physics comes from the solar neutrino problem, in which a large deficit of high-energy solar neutrinos is observed. Many Nonstandard Solar Models have been invoked to try to reduce the predicted flux, but all have run into problems in trying to reproduce other measured parameters (e.g., the luminosity) of the Sun. Other explanations involving new physics such as neutrino decay and neutrino oscillations, etc. have also been proffered. Again, most of these explanations have been ruled out by either laboratory or astrophysical measurements. It appears that perhaps the most likely particle physics solution is that of matter enhanced neutrino oscillation, the Mikheyev-Smirnov-Wolfenstein (MSW) oscillations. Two new radiochemical gallium experiments, which have a low enough threshold to be sensitive to the dominant flux of low-energy p-p neutrinos, now also report a deficit and also favor a particle physics solution.

Bowles, T.J.

1994-04-01T23:59:59.000Z

123

Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen  

SciTech Connect (OSTI)

The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.

Sallis, S.; Williams, D. S. [Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States); Butler, K. T.; Walsh, A. [Center for Sustainable Technologies and Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY (United Kingdom); Quackenbush, N. F. [Department of Physics, Applied Physics, and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Junda, M.; Podraza, N. J. [Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 (United States); Fischer, D. A.; Woicik, J. C. [Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); White, B. E.; Piper, L. F. J., E-mail: lpiper@binghamton.edu [Department of Physics, Applied Physics, and Astronomy, Binghamton University, Binghamton, New York 13902 (United States); Materials Science and Engineering, Binghamton University, Binghamton, New York 13902 (United States)

2014-06-09T23:59:59.000Z

124

Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters  

SciTech Connect (OSTI)

Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the effects of V/III ratio on structural properties and current-voltage changes in the wires. Results show that GaAs NWs grow preferably in the wurtzite crystal structure than zinc blende crystal structure with increasing V/III ratio. Additionally, CAFM studies have revealed that zincblende nanowires indicate ohmic characteristic compared to oscillation current occurred for wurtzite structures. The GaAs NWs with high quality structures are needed in solar cells technology for trapping energy that directly converts of sunlight into electricity with maximum capacity.

Muhammad, R.; Ahamad, R. [Sustainability Research Alliance, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Ibrahim, Z.; Othaman, Z. [Physic Department, Faculty of Science, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia)

2014-03-05T23:59:59.000Z

125

Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module  

SciTech Connect (OSTI)

We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.

Silverman, T. J.; Deceglie, M. G.; Marion, B.; Cowley, S.; Kayes, B.; Kurtz, S.

2013-06-01T23:59:59.000Z

126

Analysis of gallium arsenide deposition in a horizontal chemical vapor deposition reactor using massively parallel computations  

SciTech Connect (OSTI)

A numerical analysis of the deposition of gallium from trimethylgallium (TMG) and arsine in a horizontal CVD reactor with tilted susceptor and a three inch diameter rotating substrate is performed. The three-dimensional model includes complete coupling between fluid mechanics, heat transfer, and species transport, and is solved using an unstructured finite element discretization on a massively parallel computer. The effects of three operating parameters (the disk rotation rate, inlet TMG fraction, and inlet velocity) and two design parameters (the tilt angle of the reactor base and the reactor width) on the growth rate and uniformity are presented. The nonlinear dependence of the growth rate uniformity on the key operating parameters is discussed in detail. Efficient and robust algorithms for massively parallel reacting flow simulations, as incorporated into our analysis code MPSalsa, make detailed analysis of this complicated system feasible.

Salinger, A.G.; Shadid, J.N.; Hutchinson, S.A. [and others

1998-01-01T23:59:59.000Z

127

Imaging the p-n junction in a gallium nitride nanowire with a scanning microwave microscope  

SciTech Connect (OSTI)

We used a broadband, atomic-force-microscope-based, scanning microwave microscope (SMM) to probe the axial dependence of the charge depletion in a p-n junction within a gallium nitride nanowire (NW). SMM enables the visualization of the p-n junction location without the need to make patterned electrical contacts to the NW. Spatially resolved measurements of S{sub 11}{sup ?}, which is the derivative of the RF reflection coefficient S{sub 11} with respect to voltage, varied strongly when probing axially along the NW and across the p-n junction. The axial variation in S{sub 11}{sup ?}? effectively mapped the asymmetric depletion arising from the doping concentrations on either side of the junction. Furthermore, variation of the probe tip voltage altered the apparent extent of features associated with the p-n junction in S{sub 11}{sup ?} images.

Imtiaz, Atif [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Department of Electrical, Computer, and Energy Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Wallis, Thomas M.; Brubaker, Matt D.; Blanchard, Paul T.; Bertness, Kris A.; Sanford, Norman A.; Kabos, Pavel, E-mail: kabos@boulder.nist.gov [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Weber, Joel C. [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Coakley, Kevin J. [Information Technology Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States)

2014-06-30T23:59:59.000Z

128

Crystal structure and electron microprobe analyses of a lanthanum lutetium gallium garnet  

SciTech Connect (OSTI)

Single-crystal electron microprobe analysis of a lanthanum lutetium gallium garnet has resulted in a composition of La{sub 2.37}Nd{sub 0.07}Pb{sub 0.01}Lu{sub 2.54}Cr{sub 0.01} Ga{sub 3.00}O{sub 12}. This composition gives better agreement between observed and calculated total dielectric polarizabilities than previously reported compositions (La{sub 2.26--2.32}Nd{sub 0.04}Lu{sub 2.57--2.63}Ga{sub 3.07}O{sub 12} by x-ray fluorescence and La{sub 2.655}Nd{sub 0.027}Lu{sub 2.656}Ga{sub 2.655}O{sub 12} by inductively coupled plasma analyses), and does not imply the crystal-chemically improbable presence of Lu{sup 3+} in the tetrahedral site. X-ray and neutron crystal-structure analyses have confirmed that little or no Lu resides in this site.

Parise, J.B.; Harlow, R.L.; Shannon, R.D. (Central Research and Development Department, E. I. DuPont De Nemours and Co., Experimental Station, Wilmington, Delaware 19880-0228 (United States)); Kwei, G.H. (LANSCE, MS-H805, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)); Allik, T.H. (Science Applications International Corporation, 1710 Goodridge Dr., P.O. Box 1303, McLean, Virginia 22102 (United States)); Armstrong, J.T. (Department of Geological and Planetary Sciences, California Institute of Technology, Pasadena, California 91125 (United States))

1992-09-15T23:59:59.000Z

129

More Efficient Power Conversion for EVs: Gallium-Nitride Advanced Power Semiconductor and Packaging  

SciTech Connect (OSTI)

Broad Funding Opportunity Announcement Project: Delphi is developing power converters that are smaller and more energy efficient, reliable, and cost-effective than current power converters. Power converters rely on power transistors which act like a very precisely controlled on-off switch, controlling the electrical energy flowing through an electrical circuit. Most power transistors today use silicon (Si) semiconductors. However, Delphi is using semiconductors made with a thin layer of gallium-nitride (GaN) applied on top of the more conventional Si material. The GaN layer increases the energy efficiency of the power transistor and also enables the transistor to operate at much higher temperatures, voltages, and power-density levels compared to its Si counterpart. Delphi is packaging these high-performance GaN semiconductors with advanced electrical connections and a cooling system that extracts waste heat from both sides of the device to further increase the device’s efficiency and allow more electrical current to flow through it. When combined with other electronic components on a circuit board, Delphi’s GaN power transistor package will help improve the overall performance and cost-effectiveness of HEVs and EVs.

None

2010-02-01T23:59:59.000Z

130

Investigation on properties of ultrafast switching in a bulk gallium arsenide avalanche semiconductor switch  

SciTech Connect (OSTI)

Properties of ultrafast switching in a bulk gallium arsenide (GaAs) avalanche semiconductor switch based on semi-insulating wafer, triggered by an optical pulse, were analyzed using physics-based numerical simulations. It has been demonstrated that when a voltage with amplitude of 5.2?kV is applied, after an exciting optical pulse with energy of 1??J arrival, the structure with thickness of 650??m reaches a high conductivity state within 110 ps. Carriers are created due to photons absorption, and electrons and holes drift to anode and cathode terminals, respectively. Static ionizing domains appear both at anode and cathode terminals, and create impact-generated carriers which contribute to the formation of electron-hole plasma along entire channel. When the electric field in plasma region increases above the critical value (?4?kV/cm) at which the electrons drift velocity peaks, a domain comes into being. An increase in carrier concentration due to avalanche multiplication in the domains reduces the domain width and results in the formation of an additional domain as soon as the field outside the domains increases above ?4?kV/cm. The formation and evolution of multiple powerfully avalanching domains observed in the simulations are the physical reasons of ultrafast switching. The switch exhibits delayed breakdown with the characteristics affected by biased electric field, current density, and optical pulse energy. The dependence of threshold energy of the exciting optical pulse on the biased electric field is discussed.

Hu, Long, E-mail: hulong-1226@126.com [Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710049 (China); Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi'an 710024 (China); Su, Jiancang; Ding, Zhenjie; Hao, Qingsong; Yuan, Xuelin [Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi'an 710024 (China)

2014-03-07T23:59:59.000Z

131

Electronic passivation of silicon surfaces by thin films of atomic layer deposited gallium oxide  

SciTech Connect (OSTI)

This paper proposes the application of gallium oxide (Ga{sub 2}O{sub 3}) thin films to crystalline silicon solar cells. Effective passivation of n- and p-type crystalline silicon surfaces has been achieved by the application of very thin Ga{sub 2}O{sub 3} films prepared by atomic layer deposition using trimethylgallium (TMGa) and ozone (O{sub 3}) as the reactants. Surface recombination velocities as low as 6.1?cm/s have been recorded with films less than 4.5?nm thick. A range of deposition parameters has been explored, with growth rates of approximately 0.2?Å/cycle providing optimum passivation. The thermal activation energy for passivation of the Si-Ga{sub 2}O{sub 3} interface has been found to be approximately 0.5?eV. Depassivation of the interface was observed for prolonged annealing at increased temperatures. The activation energy for depassivation was measured to be 1.9?eV.

Allen, T. G., E-mail: thomas.allen@anu.edu.au; Cuevas, A. [Research School of Engineering, Australian National University, Canberra 0200 (Australia)

2014-07-21T23:59:59.000Z

132

Shear strain mediated magneto-electric effects in composites of piezoelectric lanthanum gallium silicate or tantalate and ferromagnetic alloys  

SciTech Connect (OSTI)

Shear strain mediated magneto-electric (ME) coupling is studied in composites of piezoelectric Y-cut lanthanum gallium silicate (LGS) or tantalate (LGT) and ferromagnetic Fe-Co-V alloys. It is shown that extensional strain does not result in ME effects in these layered composites. Under shear strain generated by an ac and dc bias magnetic fields along the length and width of the sample, respectively, strong ME coupling is measured at low-frequencies and at mechanical resonance. A model is discussed for the ME effects. These composites of Y-cut piezoelectrics and ferromagnetic alloys are of importance for shear strain based magnetic field sensors.

Sreenivasulu, G.; Piskulich, E.; Srinivasan, G., E-mail: srinivas@oakland.edu [Physics Department, Oakland University, Rochester, Michigan 48409 (United States); Qu, P.; Qu, Hongwei [Electrical and Computer Engineering, Oakland University, Rochester, Michigan 48309 (United States); Petrov, V. M. [Institute of Electronic Information Systems, Novgorod State University, Veliky Novgorod (Russian Federation); Fetisov, Y. K. [Moscow State Technical University of Radio Engineering, Electronics and Automation, Moscow 19454 (Russian Federation); Nosov, A. P. [Institute of Metal Physics, Ural Division of Russian Academy of Sciences, 18 S. Kovalevskaya St, Ekaterinburg 620990 (Russian Federation)

2014-07-21T23:59:59.000Z

133

integrative www.unil.ch/cig  

E-Print Network [OSTI]

on plant growth and development 12 Paul Franken Genetics and energetics of sleep homeostasis and circadian the acquisition of new technologies or the development of new research and educational activities or services

Kaessmann, Henrik

134

Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors  

DOE Patents [OSTI]

Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

Curtis, Calvin J. (Lakewood, CO); Miedaner, Alexander (Boulder, CO); Van Hest, Maikel (Lakewood, CO); Ginley, David S. (Evergreen, CO); Nekuda, Jennifer A. (Lakewood, CO)

2011-11-15T23:59:59.000Z

135

The reaction of carbon tetrachloride with gallium arsenide ,,001... L. Li., S, Gan, B.-K. Han, H. Qi, and R. F. Hicksa)  

E-Print Network [OSTI]

The reaction of carbon tetrachloride with gallium arsenide ,,001... L. Li., S, Gan, B.-K. Han, H, California 90095 Received 26 June 1997; accepted for publication 30 December 1997 Carbon tetrachloride of steps during the vapor-phase epitaxial growth of III­V compound semiconductors.3,4 Carbon tetrachloride

Li, Lian

136

Measurement of the solar neutrino capture rate with gallium metal, part III  

SciTech Connect (OSTI)

The Russian-American experiment SAGE began to measure the solar neutrino capture rate with a target of gallium metal in December 1989. Measurements have continued with only a few brief interruptions since that time. In this article we present the experimental improvements in SAGE since its last published data summary in December 2001. Assuming the solar neutrino production rate was constant during the period of data collection, combined analysis of 168 extractions through December 2007 gives a capture rate of solar neutrinos with energy more than 233 keY of 65.4{sup +3.1}{sub 3.0} (stat) {sup +2.6}{sub -2.8} (syst) SNU. The weighted average of the results of all three Ga solar neUlrino experiments, SAGE, Gallex, and GNO, is now 66.1 {+-} 3.1 SNU, where statistical and systematic uncertainties have been combined in quadrature. During the recent period of data collection a new test of SAGE was made with a reactor-produced {sup 37}Ar neutrino source. The ratio of observed to calculated rates in this experiment, combined with the measured rates in the three prior {sup 51}Cr neutrino-source experiments with Ga, is 0.88 {+-} 0.05. A probable explanation for this low result is that the cross section for neutrino capture by the two lowest-lying excited states in {sup 71}Ge has been overestimated. If we assume these cross sections are zero, then the standard solar model including neutrino oscillations predicts a total capture rate in Ga in the range of 63--67 SNU with an uncertainly of about 5%, in good agreement with experiment. We derive the current value of the pp neutrino flux produced in the Sun to be {phi}{sup {circle_dot}}{sub pp} = (6.1 {+-} 0.8) x 10{sup 10}/(cm{sup 2} s), which agrees well with the flux predicted by the standard solar model. Finally, we make several tests and show that the data are consistent with the assumption that the solar neutrino production rate is constant in time.

Elliott, Steven Ray [Los Alamos National Laboratory

2008-01-01T23:59:59.000Z

137

This content has been downloaded from IOPscience. Please scroll down to see the full text. Download details  

E-Print Network [OSTI]

S is found as a window layer for thin film cadmium telluride (CdTe) and copper indium gallium (di)selenide based solar cells. The recent advances in CdTe/CdS thin film technology and fabrication Materials allowed CdTe/CdS solar cells to emerge as a leader in the growing market of thin film module production

Khare, Sanjay V.

138

An experiment to test the viability of a gallium-arsenide cathode in a SRF electron gun  

SciTech Connect (OSTI)

Strained gallium arsenide cathodes are used in electron guns for the production of polarized electrons. In order to have a sufficient quantum efficiency lifetime of the cathode the vacuum in the gun must be 10{sup -11} Torr or better, so that the cathode is not destroyed by ion back bombardment or through contamination with residual gases. All successful polarized guns are DC guns, because such vacuum levels can not be obtained in normal conducting RF guns. A superconductive RF gun may provide a sufficient vacuum level due to cryo-pumping of the cavity walls. We report on the progress of our experiment to test such a gun with normal GaAs-Cs crystals.

Kewisch,J.; Ben-Zvi, I.; Rao, T.; Burrill, A.; Pate, D.; Wu, Q.; Todd, R.; Wang, E.; Bluem, H.; Holmes, D.; Schultheiss, T.

2009-05-04T23:59:59.000Z

139

Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere  

SciTech Connect (OSTI)

An isotope tracer study, i.e., {sup 18}O/{sup 16}O exchange using {sup 18}O{sub 2} and H{sub 2}{sup 18}O, was performed to determine how post-deposition annealing (PDA) affected surface reactivity and oxygen diffusivity of amorphous indium–gallium–zinc oxide (a-IGZO) films. The oxygen tracer diffusivity was very high in the bulk even at low temperatures, e.g., 200?°C, regardless of PDA and exchange conditions. In contrast, the isotope exchange rate, dominated by surface reactivity, was much lower for {sup 18}O{sub 2} than for H{sub 2}{sup 18}O. PDA in a humid atmosphere at 400?°C further suppressed the reactivity of O{sub 2} at the a-IGZO film surface, which is attributable to –OH-terminated surface formation.

Watanabe, Ken, E-mail: Watanabe.Ken@nims.go.jp [International Center for Young Scientists (ICYS-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044 (Japan)] [International Center for Young Scientists (ICYS-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044 (Japan); Lee, Dong-Hee [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan) [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan); Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Sakaguchi, Isao; Haneda, Hajime [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan)] [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan); Nomura, Kenji [Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan)] [Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Kamiya, Toshio [Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan) [Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Materials Research Center for Element Strategy (MCES), Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Hosono, Hideo [Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan) [Materials and Structures Laboratory (MSL), Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Frontier Research Center, Tokyo Institute of Technology, Mailbox S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Materials Research Center for Element Strategy (MCES), Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan); Ohashi, Naoki, E-mail: Ohashi.Naoki@nims.go.jp [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan) [Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba 305-0044 (Japan); Materials Research Center for Element Strategy (MCES), Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan)

2013-11-11T23:59:59.000Z

140

Characteristics of trap-filled gallium arsenide photoconductive switches used in high gain pulsed power applications  

SciTech Connect (OSTI)

The electrical properties of semi-insulating (SI) Gallium Arsenide (GaAs) have been investigated for some time, particularly for its application as a substrate in microelectronics. Of late this material has found a variety of applications other than as an isolation region between devices, or the substrate of an active device. High resistivity SI GaAs is increasingly being used in charged particle detectors and photoconductive semiconductor switches (PCSS). PCSS made from these materials operating in both the linear and non-linear modes have applications such as firing sets, as drivers for lasers, and in high impedance, low current Q-switches or Pockels cells. In the non-linear mode, it has also been used in a system to generate Ultra-Wideband (UWB) High Power Microwaves (HPM). The choice of GaAs over silicon offers the advantage that its material properties allow for fast, repetitive switching action. Furthermore photoconductive switches have advantages over conventional switches such as improved jitter, better impedance matching, compact size, and in some cases, lower laser energy requirement for switching action. The rise time of the PCSS is an important parameter that affects the maximum energy transferred to the load and it depends, in addition to other parameters, on the bias or the average field across the switch. High field operation has been an important goal in PCSS research. Due to surface flashover or premature material breakdown at higher voltages, most PCSS, especially those used in high power operation, need to operate well below the inherent breakdown voltage of the material. The lifetime or the total number of switching operations before breakdown, is another important switch parameter that needs to be considered for operation at high bias conditions. A lifetime of {approximately} 10{sup 4} shots has been reported for PCSS's used in UWB-HPM generation [5], while it has exceeded 10{sup 8} shots for electro-optic drivers. Much effort is currently being channeled in the study related to improvements of these two parameters high bias operation and lifetime improvement for switches used in pulsed power applications. The contact material and profiles are another important area of study. Although these problems are being pursued through the incorporation of different contact materials and introducing doping near contacts, it is important that the switch properties and the conduction mechanism in these switches be well understood such that the basic nature of the problems can be properly addressed. In this paper the authors report on these two basic issues related to the device operation, i.e., mechanisms for increasing the hold-off characteristics through neutron irradiation, and the analysis of transport processes at varying field conditions in trap dominated SI GaAs in order to identify the breakdown mechanism during device operation. It is expected that this study would result in a better understanding of photoconductive switches, specifically those used in high power operation.

ISLAM,N.E.; SCHAMILOGLU,E.; MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; JOSHI,R.P.

2000-05-30T23:59:59.000Z

Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Photon self-induced spin-to-orbital conversion in a terbium-gallium-garnet crystal at high laser power  

SciTech Connect (OSTI)

In this paper, we present experimental evidence of a third-order nonlinear optical process, self-induced spin-to-orbital conversion (SISTOC) of the photon angular momentum. This effect is the physical mechanism at the origin of the depolarization of very intense laser beams propagating in isotropic materials. The SISTOC process, like self-focusing, is triggered by laser heating leading to a radial temperature gradient in the medium. In this work we tested the occurrence of SISTOC in a terbium-gallium-garnet rod for an impinging laser power of about 100 W. To study the SISTOC process we used different techniques: polarization analysis, interferometry, and tomography of the photon orbital angular momentum. Our results confirm, in particular, that the apparent depolarization of the beam is due to the occurrence of maximal entanglement between the spin and orbital angular momentum of the photons undergoing the SISTOC process. This explanation of the true nature of the depolarization mechanism could be of some help in finding novel methods to reduce or to compensate for this usually unwanted depolarization effect in all cases where very high laser power and good beam quality are required.

Mosca, S.; De Rosa, R.; Milano, L. [Dipartimento di Scienze Fisiche, Universita di Napoli 'Federico II', Complesso Universitario di Monte S. Angelo, 80126 Napoli (Italy); INFN Sezione di Napoli, Complesso Universitario di Monte S. Angelo, 80126 Napoli (Italy); Canuel, B.; Genin, E. [EGO, European Gravitational Observatory, Via E. Amaldi, 56021 S. Stefano a Macerata, Cascina (Italy); Karimi, E. [Dipartimento di Scienze Fisiche, Universita di Napoli 'Federico II', Complesso Universitario di Monte S. Angelo, 80126 Napoli (Italy); Piccirillo, B.; Santamato, E. [Dipartimento di Scienze Fisiche, Universita di Napoli 'Federico II', Complesso Universitario di Monte S. Angelo, 80126 Napoli (Italy); CNISM-Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia, Napoli (Italy); Marrucci, L. [Dipartimento di Scienze Fisiche, Universita di Napoli 'Federico II', Complesso Universitario di Monte S. Angelo, 80126 Napoli (Italy); CNR-INFM Coherentia, Complesso Universitario di Monte S. Angelo, 80126 Napoli (Italy)

2010-10-15T23:59:59.000Z

142

CO{sub 2} laser-based dispersion interferometer utilizing orientation-patterned gallium arsenide for plasma density measurements  

SciTech Connect (OSTI)

A dispersion interferometer based on the second-harmonic generation of a carbon dioxide laser in orientation-patterned gallium arsenide has been developed for measuring electron density in plasmas. The interferometer includes two nonlinear optical crystals placed on opposite sides of the plasma. This instrument has been used to measure electron line densities in a pulsed radio-frequency generated argon plasma. A simple phase-extraction technique based on combining measurements from two successive pulses of the plasma has been used. The noise-equivalent line density was measured to be 1.7 × 10{sup 17} m{sup ?2} in a detection bandwidth of 950 kHz. One of the orientation-patterned crystals produced 13 mW of peak power at the second-harmonic wavelength from a carbon dioxide laser with 13 W of peak power. Two crystals arranged sequentially produced 58 mW of peak power at the second-harmonic wavelength from a carbon dioxide laser with 37 W of peak power.

Bamford, D. J.; Cummings, E. A.; Panasenko, D. [Physical Sciences Inc., 6652 Owens Drive, Pleasanton, California 94588 (United States)] [Physical Sciences Inc., 6652 Owens Drive, Pleasanton, California 94588 (United States); Fenner, D. B.; Hensley, J. M. [Physical Sciences Inc., 20 New England Business Center, Andover, Massachusetts 01810 (United States)] [Physical Sciences Inc., 20 New England Business Center, Andover, Massachusetts 01810 (United States); Boivin, R. L.; Carlstrom, T. N.; Van Zeeland, M. A. [General Atomics, P.O. Box 85608, San Diego, California 92186 (United States)] [General Atomics, P.O. Box 85608, San Diego, California 92186 (United States)

2013-09-15T23:59:59.000Z

143

Saddle-like deformation in a dielectric elastomer actuator embedded with liquid-phase gallium-indium electrodes  

SciTech Connect (OSTI)

We introduce a dielectric elastomer actuator (DEA) composed of liquid-phase Gallium-Indium (GaIn) alloy electrodes embedded between layers of poly(dimethylsiloxane) (PDMS) and examine its mechanics using a specialized elastic shell theory. Residual stresses in the dielectric and sealing layers of PDMS cause the DEA to deform into a saddle-like geometry (Gaussian curvature K<0). Applying voltage ? to the liquid metal electrodes induces electrostatic pressure (Maxwell stress) on the dielectric and relieves some of the residual stress. This reduces the longitudinal bending curvature and corresponding angle of deflection ?. Treating the elastomer as an incompressible, isotropic, NeoHookean solid, we develop a theory based on the principle of minimum potential energy to predict the principal curvatures as a function of ?. Based on this theory, we predict a dependency of ? on ? that is in strong agreement with experimental measurements performed on a GaIn-PDMS composite. By accurately modeling electromechanical coupling in a soft-matter DEA, this theory can inform improvements in design and fabrication.

Wissman, J., E-mail: jwissman@andrew.cmu.edu [Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Finkenauer, L. [Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Deseri, L. [DICAM, Department of Mechanical, Civil and Environmental Engineering, University of Trento, via Mesiano 77 38123 Trento (Italy); TMHRI-Department of Nanomedicine, The Methodist Hospital Research Institute, 6565 Fannin St., MS B-490 Houston, Texas 77030 (United States); Mechanics, Materials and Computing Center, CEE and ME-CIT, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Majidi, C. [Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Robotics Institute and Department of Civil and Environmental Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)

2014-10-14T23:59:59.000Z

144

Hort-Range Wetting at Liquid Gallium-Bismuth Alloy Surfaces: X-ray Measurements and Square-Gradient Theory  

SciTech Connect (OSTI)

We present an x-ray reflectivity study of wetting at the free surface of the binary liquid metal alloy gallium-bismuth (Ga-Bi) in the region where the bulk phase separates into Bi-rich and Ga-rich liquid phases. The measurements reveal the evolution of the microscopic structure of the wetting films of the Bi-rich, low-surface-tension phase along several paths in the bulk phase diagram. The wetting of the Ga-rich bulk's surface by a Bi-rich wetting film, the thickness of which is limited by gravity to only 50 Angstroms, creates a Ga-rich/Bi-rich liquid/liquid interface close enough to the free surface to allow its detailed study by x rays. The structure of the interface is determined with Angstromsngstrem resolution, which allows the application of a mean-field square gradient model extended by the inclusion of capillary waves as the dominant thermal fluctuations. The sole free parameter of the gradient model, the influence parameter K, that characterizes the influence of concentration gradients on the interfacial excess energy, is determined from our measurements. This, in turn, allows a calculation of the liquid/liquid interfacial tension, and a separation of the intrinsic and capillary wave contributions to the interfacial structure. In spite of expected deviations from MF behavior, based on the upper critical dimensionality (Du = 3 ) of the bulk, we find that the capillary wave excitations only marginally affect the short-range complete wetting behavior. A critical wetting transition that is sensitive to thermal fluctuations appears to be absent in this binary liquid-metal alloy.

Huber, P.; Shpyrko, O; Pershan, P; Ocko, B; DiMasi, E; Deutsch, M

2009-01-01T23:59:59.000Z

145

Final Technical Report: Hawaii Hydrogen Center for Development and Deployment of Distributed Energy Systems  

SciTech Connect (OSTI)

Hydrogen power park experiments in Hawai‘i produced real-world data on the performance of commercialized electrochemical components and power systems integrating renewable and hydrogen technologies. By analyzing the different losses associated with the various equipment items involved, this work identifies the different improvements necessary to increase the viability of these technologies for commercial deployment. The stand-alone power system installed at Kahua Ranch on the Big Island of Hawaii required the development of the necessary tools to connect, manage and monitor such a system. It also helped the electrolyzer supplier to adapt its unit to the stand-alone power system application. Hydrogen fuel purity assessments conducted at the Hawai‘i Natural Energy Institute (HNEI) fuel cell test facility yielded additional knowledge regarding fuel cell performance degradation due to exposure to several different fuel contaminants. In addition, a novel fitting strategy was developed to permit accurate separation of the degradation of fuel cell performance due to fuel impurities from other losses. A specific standard MEA and a standard flow field were selected for use in future small-scale fuel cell experiments. Renewable hydrogen production research was conducted using photoelectrochemical (PEC) devices, hydrogen production from biomass, and biohydrogen analysis. PEC device activities explored novel configurations of ‘traditional’ photovoltaic materials for application in high-efficiency photoelectrolysis for solar hydrogen production. The model systems investigated involved combinations of copper-indium-gallium-diselenide (CIGS) and hydrogenated amorphous silicon (a-Si:H). A key result of this work was the establishment of a robust “three-stage” fabrication process at HNEI for high-efficiency CIGS thin film solar cells. The other key accomplishment was the development of models, designs and prototypes of novel ‘four-terminal’ devices integrating high-efficiency CIGS and a-Si:H with operating features compatible with high-efficiency photoelectrochemical (PEC) water-splitting. The objective of one activity under the hydrogen production from biomass task was to conduct parametric testing of the Pearson gasifier and to determine the effects of gasifier operating conditions on the gas yields and quality. The hydrogen yield from this gasifier was evaluated in a parametric test series over a range of residence times from 0.8 to 2.2 seconds. H2 concentrations as high as 55% (volume) were measured in the product gas at the longer residence times and this corresponds to a hydrogen yield of 90 kg per tonne of bagasse without gas upgrading. The objective of another activity was to develop hot gas clean-up capabilities for the HNEI gasifier test facility to support hydrogen-from-biomass research. The product gas stream at the outlet of the hot gas filter was characterized for concentrations of permanent gas species and contaminants. Biomass feedstock processing activity included a preliminary investigation into methods for processing sugar cane trash at the Puunene Sugar Factory on the island of Maui, Hawaii. The objective of the investigation was to explore treatment methods that would enable the successful use of cane trash as fuel for the production of hydrogen via gasification. Analyses were completed for the technical and economic feasibility of producing biofuel from photosynthetic marine microbes on a commercial scale. Results included estimates for total costs, energy efficiency, and return on investment. The biohydrogen team undertook a comprehensive review of the field and came to what is considered a realistic conclusion. To summarize, continued research is recommended in the fundamentals of the science related to genetic engineering and specific topics to cover knowledge gaps. In the meantime, the team also advocates continued development of related processes which can be linked to pollution control and other real world applications. The extra revenues hydrogen can provide to these multi-product systems can

Rocheleau, Richard E.

2008-09-30T23:59:59.000Z

146

CX-002541: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Emerging Renewables Industries: Copper, Indium, Gallium, Selenium (CIGS) Linear Source Thermal DepositionCX(s) Applied: B2.2, B5.1Date: 05/19/2010Location(s): St. Paul, MinnesotaOffice(s): Energy Efficiency and Renewable Energy, Golden Field Office

147

Photovoltaic Materials  

SciTech Connect (OSTI)

The goal of the current project was to help make the US solar industry a world leader in the manufacture of thin film photovoltaics. The overall approach was to leverage ORNL’s unique characterization and processing technologies to gain a better understanding of the fundamental challenges for solar cell processing and apply that knowledge to targeted projects with industry members. ORNL has the capabilities in place and the expertise required to understand how basic material properties including defects, impurities, and grain boundaries affect the solar cell performance. ORNL also has unique processing capabilities to optimize the manufacturing process for fabrication of high efficiency and low cost solar cells. ORNL recently established the Center for Advanced Thin-film Systems (CATS), which contains a suite of optical and electrical characterization equipment specifically focused on solar cell research. Under this project, ORNL made these facilities available to industrial partners who were interested in pursuing collaborative research toward the improvement of their product or manufacturing process. Four specific projects were pursued with industrial partners: Global Solar Energy is a solar industry leader in full scale production manufacturing highly-efficient Copper Indium Gallium diSelenide (CIGS) thin film solar material, cells and products. ORNL worked with GSE to develop a scalable, non-vacuum, solution technique to deposit amorphous or nanocrystalline conducting barrier layers on untextured stainless steel substrates for fabricating high efficiency flexible CIGS PV. Ferro Corporation’s Electronic, Color and Glass Materials (“ECGM”) business unit is currently the world’s largest supplier of metallic contact materials in the crystalline solar cell marketplace. Ferro’s ECGM business unit has been the world's leading supplier of thick film metal pastes to the crystalline silicon PV industry for more than 30 years, and has had operational cells and modules in the field for 25 years. Under this project, Ferro leveraged world leading analytical capabilities at ORNL to characterize the paste-to-silicon interface microstructure and develop high efficiency next generation contact pastes. Ampulse Corporation is developing a revolutionary crystalline-silicon (c-Si) thin-film solar photovoltaic (PV) technology. Utilizing uniquely-textured substrates and buffer materials from the Oak Ridge National Laboratory (ORNL), and breakthroughs in Hot-Wire Chemical Vapor Deposition (HW-CVD) techniques in epitaxial silicon developed at the National Renewable Energy Laboratory (NREL), Ampulse is creating a solar technology that is tunable in silicon thickness, and hence in efficiency and economics, to meet the specific requirements of multiple solar PV applications. This project focused on the development of a high rate deposition process to deposit Si, Ge, and Si1-xGex films as an alternate to hot-wire CVD. Mossey Creek Solar is a start-up company with great expertise in the solar field. The primary interest is to create and preserve jobs in the solar sector by developing high-yield, low-cost, high-efficiency solar cells using MSC-patented and -proprietary technologies. The specific goal of this project was to produce large grain formation in thin, net-shape-thickness mc-Si wafers processed with high-purity silicon powder and ORNL's plasma arc lamp melting without introducing impurities that compromise absorption coefficient and carrier lifetime. As part of this project, ORNL also added specific pieces of equipment to enhance our ability to provide unique insight for the solar industry. These capabilities include a moisture barrier measurement system, a combined physical vapor deposition and sputtering system dedicated to cadmium-containing deposits, adeep level transient spectroscopy system useful for identifying defects, an integrating sphere photoluminescence system, and a high-speed ink jet printing system. These tools were combined with others to study the effect of defects on the performance of crystalline silicon and

Duty, C.; Angelini, J.; Armstrong, B.; Bennett, C.; Evans, B.; Jellison, G. E.; Joshi, P.; List, F.; Paranthaman, P.; Parish, C.; Wereszczak, A.

2012-10-15T23:59:59.000Z

148

Sandia National Laboratories: gallium nitride  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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149

Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells  

DOE Patents [OSTI]

High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

Bhattacharya, Raghu N. (Littleton, CO); Contreras, Miguel A. (Golden, CO); Keane, James (Lakewood, CO); Tennant, Andrew L. (Denver, CO); Tuttle, John R. (Denver, CO); Ramanathan, Kannan (Lakewood, CO); Noufi, Rommel (Golden, CO)

1998-03-24T23:59:59.000Z

150

PACIFIC NORTHWEST: CLIMATE IMPACTS GROUP http://www.cses.washington.edu/cig/  

E-Print Network [OSTI]

of Tualatin, Oregon · King County, Washington (County Council, Office of the Executive, Department of Natural · Tacoma Power and Light · Thurston County, Washington State Level · Alaska Department of Fish and Game

Colorado at Boulder, University of

151

Direct measurements of band gap grading in polycrystalline CIGS solar cells  

E-Print Network [OSTI]

We present direct measurements of depth-resolved band gap variations of CuIn(1-x)Ga(x)Se2 thin-film solar cell absorbers. A new measurement technique combining parallel measurements of local thin-film interference and spectral photoluminescence was developed for this purpose. We find sample-dependent correlation parameters between measured band gap depth and composition profiles, and emphasize the importance of direct measurements. These results bring a quantitative insight into the electronic properties of the solar cells and open a new way to analyze parameters that determine the efficiency of solar cells.

M. P. Heinrich; Z-H. Zhang; Y. Zhang; O. Kiowski; M. Powalla; U. Lemmer; A. Slobodskyy

2010-09-20T23:59:59.000Z

152

Direct measurements of band gap grading in polycrystalline CIGS solar cells  

E-Print Network [OSTI]

We present direct measurements of depth-resolved band gap variations of CuIn(1-x)Ga(x)Se2 thin-film solar cell absorbers. A new measurement technique combining parallel measurements of local thin-film interference and spectral photoluminescence was developed for this purpose. We find sample-dependent correlation parameters between measured band gap depth and composition profiles, and emphasize the importance of direct measurements. These results bring a quantitative insight into the electronic properties of the solar cells and open a new way to analyze parameters that determine the efficiency of solar cells.

Heinrich, M P; Zhang, Y; Kiowski, O; Powalla, M; Lemmer, U; Slobodskyy, A

2010-01-01T23:59:59.000Z

153

Post-Deposition Treatment Boosts CIGS Solar Cell Performance (Fact Sheet)  

SciTech Connect (OSTI)

NREL's use of potassium fluoride process improves the open-circuit voltage and conversion efficiency.

Not Available

2014-08-01T23:59:59.000Z

154

Degradation of ZnO Window Layer for CIGS by Damp-Heat Exposure: Preprint  

SciTech Connect (OSTI)

This paper summarizes our work with more details and an emphasis on the DH-induced degradation of Al-doped ZnO and Zn1-xMgxO alloys. The other two TCOs, ITO and F:SnO2, are not included here.

Pern, F.J.; To, B.; DeHart, C.; Li, X.; Glick, S. H.; Noufi, R.

2008-08-01T23:59:59.000Z

155

Thin Film CIGS and CdTe Photovoltaic Technologies: Commercialization, Critical Issues, and Applications; Preprint  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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156

CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and Accomplishments  

Office of Scientific and Technical Information (OSTI)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinan antagonist Journal Article: Crystal structureComposite-- Energy, science, and technology - C L A

157

NREL: Awards and Honors - Lightweight, Flexible, Thin-Film CIGS PV Modules  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the Contributions and Achievements of Women |hits 21Species.4ElectroexplodedLightweight,

158

Electronic properties of gallium nitride nanowires  

E-Print Network [OSTI]

This thesis presents a systematic study of the electrical transport in GaN nanowires. Particularly, the effect of the surrounding dielectric on the conductivity of GaN nanowires is experimentally shown for the first time. ...

Yoon, Joonah

2008-01-01T23:59:59.000Z

159

Interactions of gallium with zircaloy cladding  

E-Print Network [OSTI]

CHAPTER I INTRODUCTION The accepted options for the disposition of weapons-grade plutonium (WGPu) are immobilization or conversion to a mixed-oxide (MOX) reactor fuel. There are two benefits of conversion, one, the plutonium can't be converted back... into a viable weapon and two, the material could be used as an energy producing natural resource. Typical reactors use uranium dioxide enriched with about 3'le U-235. The proposed MOX fuel would consist of depleted uranium with WGPu. In order...

Mitchell, Lee Josey

2012-06-07T23:59:59.000Z

160

Superconductive silicon nanowires using gallium beam lithography.  

SciTech Connect (OSTI)

This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

Henry, Michael David; Jarecki, Robert Leo,

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Self- and zinc diffusion in gallium antimonide  

E-Print Network [OSTI]

5, 265 (1957). S. Glasstone, K . Laidler, H . Eyring, Thequantity D . Henry Eyring [Glasstone, Eyring (1941)] was the

Nicols, Samuel Piers

2002-01-01T23:59:59.000Z

162

Designing Asynchronous Circuits in Gallium Arsenide  

E-Print Network [OSTI]

3.2.2 Super Buffered Fet Logic : : : : : : : : : : : : : : : : : 18 4 A New Logic Family 21 4.1 Input Stage : : : : : : : : : : : : : : : : : : : : : : : : : : : : 21 4.1.1 Inverter : : : : : : : : : : : : : : : : : : : : : : : : 34 5.2.2 Output stage : : : : : : : : : : : : : : : : : : : : : : : 36 5.2.3 Delay model and power

Martin, Alain

163

Absorptivity of semiconductors used in the production of solar cell panels  

SciTech Connect (OSTI)

The dependence of the absorptivity of semiconductors on the thickness of the absorbing layer is studied for crystalline silicon (c-Si), amorphous silicon (a-Si), cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS), and copper gallium diselenide (CuGaSe{sub 2}, CGS). The calculations are performed with consideration for the spectral distribution of AM1.5 standard solar radiation and the absorption coefficients of the materials. It is shown that, in the region of wavelengths {lambda} = {lambda}{sub g} = hc/E{sub g}, almost total absorption of the photons in AM1.5 solar radiation is attained in c-Si at the thickness d = 7-8 mm, in a-Si at d = 30-60 {mu}m, in CdTe at d = 20-30 {mu}m, and in CIS and CGS at d = 3-4 {mu}m. The results differ from previously reported data for these materials (especially for c-Si). In previous publications, the thickness needed for the semiconductor to absorb solar radiation completely was identified with the effective light penetration depth at a certain wavelength in the region of fundamental absorption for the semiconductor.

Kosyachenko, L. A., E-mail: lakos@chv.ukrpack.net; Grushko, E. V.; Mikityuk, T. I. [Chernivtsy National University (Ukraine)

2012-04-15T23:59:59.000Z

164

Metals Production Requirements for Rapid Photovoltaics Deployment  

E-Print Network [OSTI]

If global photovoltaics (PV) deployment grows rapidly, the required input materials need to be supplied at an increasing rate. In this paper, we quantify the effect of PV deployment levels on the scale of metals production. For example, we find that if cadmium telluride {copper indium gallium diselenide} PV accounts for more than 3% {10%} of electricity generation by 2030, the required growth rates for the production of indium and tellurium would exceed historically-observed production growth rates for a large set of metals. In contrast, even if crystalline silicon PV supplies all electricity in 2030, the required silicon production growth rate would fall within the historical range. More generally, this paper highlights possible constraints to the rate of scaling up metals production for some PV technologies, and outlines an approach to assessing projected metals growth requirements against an ensemble of past growth rates from across the metals production sector. The framework developed in this paper may be...

Kavlak, Goksin; Jaffe, Robert L; Trancik, Jessika E

2015-01-01T23:59:59.000Z

165

TOWARDS CIGS SOLAR CELLS WITH REDUCED FILM THICKNESS: A STUDY OF OPTICAL PROPERTIES AND OF PHOTONIC STRUCTURES FOR LIGHT TRAPPING  

E-Print Network [OSTI]

. The electro-optical simulations are performed using Silvaco International, Inc. ATLAS software package

166

High Efficiency CdTe and CIGS Thin Film Solar Cells: Highlights of the Technologies Challenges (Presentation)  

Office of Scientific and Technical Information (OSTI)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinan antagonist Journal Article: Crystal structureComposite--FORRemarksHEATING DISTRIBUTIONS INDOBEH

167

Rutherford backscattering analysis of gallium implanted 316 stainless steel  

E-Print Network [OSTI]

Experimental Procedure Sample Analysis 3 3 . 9 . 11 HI THEORY. . IH. 1 Backscattering Principles HI. 2 The RBS Spectrum IH. 3 The Surface Energy Approximation . . . HI. 4 Stainless Steel 316. . IV RESULTS AND DISCUSSION . . 13 . 13 15... for the disposition of weapons grade (WG) plutonium (Pu) in the United States: MOX fuel conversion and immobilization. The first option uses nuclear reactors to transmutate WG Pu and the second imbeds the WG Pu in glass logs for deep burial. Due to the large amount...

Ortensi, Javier

2012-06-07T23:59:59.000Z

168

amorphous indium gallium: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

on which all indium abundance studies are based, both for the quiet-sun and the sunspot umbra spectrum, employing standard atmosphere models and accounting for hyperfine structure...

169

Gallium Arsenide (GaAs) EDWARD D. PALIK  

E-Print Network [OSTI]

constants of pure (semi-insulating) GaAs are derived from a number of papers including the far-infrared at. [4]; the near-IR work of Pikhtin and Yas'kov [5]; the calorim- etry work of Christensen et al. [6 reflection work of Philipp and Ehrenreich [9]; and the synchrotron transmission work of Cardona et al. [10

Pulfrey, David L.

170

Broadband electrooptic modulators based on gallium arsenide materials  

E-Print Network [OSTI]

Optical Arbitrary Waveform Generation (OAWG) combines frequency combs and frequency-by- frequency pulse shapers to synthesize optical waveforms. The OAWG technique has a wide variety of applications, ranging from high ...

Shamir, Orit A

2012-01-01T23:59:59.000Z

171

Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystals  

SciTech Connect (OSTI)

We report on the spatially selective formation of GaN nanocrystals embedded in GaAs. Broad-area N{sup +} implantation followed by rapid thermal annealing leads to the formation of nanocrystals at the depth of maximum ion damage. With additional irradiation using a Ga{sup +} focused ion beam, selective lateral positioning of the nanocrystals within the GaAs matrix is observed in isolated regions of increased vacancy concentration. Following rapid thermal annealing, the formation of zincblende GaN is observed in the regions of highest vacancy concentration. The nucleation of zincblende nanocrystals over the wurtzite phase of bulk GaN is consistent with the predictions of a thermodynamic model for the nanoscale size-dependence of GaN nucleation.

Wood, A. W. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States); Collino, R. R. [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Cardozo, B. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Naab, F. [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109 (United States); Wang, Y. Q. [Materials Science and Technology Division, Los Alamos National Lab, Los Alamos, New Mexico 87545 (United States); Goldman, R. S. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2011-12-15T23:59:59.000Z

172

Self-aligned submicron gate length gallium arsenide MESFET  

E-Print Network [OSTI]

-biaserl saturation currents of 396. 67 + 83. 984 IzA were obtained for the transistors. Built- in voltages of 0. 8198 6 0. 007 V and ideality factors of 1. 456 6 0. 0079 were obtained for the Schottky diodes. The effect of gate length on transcond ictance... Geometrical and physical origins for the small signal equivalent circuit of FET Developed fabrication process for submicron gate length GaAs MESFET Transistor and Schottky diode mask patterns 10 13 15 16 18 19 21 23 23 25 25 32 34 18. Process...

Huang, Hsien-Ching

2012-06-07T23:59:59.000Z

173

Neutron irradiation effects on metal-gallium nitride contacts  

SciTech Connect (OSTI)

We have measured the effect of fast and thermal neutrons on GaN Schottky barriers and ohmic contacts using current–voltage and transmission line method electrical techniques, optical, atomic force and scanning electron microscopy morphological techniques, and X-ray photoemission spectroscopy chemical techniques. These studies reveal a 10{sup 15}?n/cm{sup 2} neutron threshold for Schottky barrier ideality factor increases, a 10{sup 15}?n/cm{sup 2} fast plus thermal neutron threshold for ohmic contact sheet and contact resistance increases, and 10{sup 16}?n/cm{sup 2} neutron fluence threshold for major device degradation identified with thermally driven diffusion of Ga and N into the metal contacts and surface phase changes. These results demonstrate the need for protecting metal-GaN contacts in device applications subject to neutron radiation.

Katz, Evan J.; Lin, Chung-Han; Zhang, Zhichun [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Qiu, Jie; Cao, Lei [Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Mishra, Umesh K. [Departments of Electrical and Computer Engineering and Materials Science and Engineering University of California, Santa Barbara, California 93106 (United States); Brillson, Leonard J., E-mail: brillson.1@osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Physics and Center for Materials Research, The Ohio State University, Columbus, Ohio 43210 (United States)

2014-03-28T23:59:59.000Z

174

Neutron irradiation effects on gallium nitride-based Schottky diodes  

SciTech Connect (OSTI)

Depth-resolved cathodoluminescence spectroscopy (DRCLS), time-resolved surface photovoltage spectroscopy, X-ray photoemission spectroscopy (XPS), and current-voltage measurements together show that fast versus thermal neutrons differ strongly in their electronic and morphological effects on metal-GaN Schottky diodes. Fast and thermal neutrons introduce GaN displacement damage and native point defects, while thermal neutrons also drive metallurgical reactions at metal/GaN interfaces. Defect densities exhibit a threshold neutron fluence below which thermal neutrons preferentially heal versus create new native point defects. Scanning XPS and DRCLS reveal strong fluence- and metal-dependent electronic and chemical changes near the free surface and metal interfaces that impact diode properties.

Lin, Chung-Han; Katz, Evan J.; Zhang, Zhichun [Department of Electrical and Computer Engineering, The Ohio State University, Columbus Ohio 43210 (United States)] [Department of Electrical and Computer Engineering, The Ohio State University, Columbus Ohio 43210 (United States); Qiu, Jie; Cao, Lei [Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)] [Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Mishra, Umesh K. [Departments of Electrical and Computer Engineering and Materials Science and Engineering, University of California, Santa Barbara, California 93106 (United States)] [Departments of Electrical and Computer Engineering and Materials Science and Engineering, University of California, Santa Barbara, California 93106 (United States); Brillson, Leonard J. [Department of Electrical and Computer Engineering, The Ohio State University, Columbus Ohio 43210 (United States) [Department of Electrical and Computer Engineering, The Ohio State University, Columbus Ohio 43210 (United States); Department of Physics and Center for Materials Research, The Ohio State University, Columbus, Ohio 43210 (United States)

2013-10-14T23:59:59.000Z

175

Superconductivity in gallium-substituted Ba8Si46 clathrates  

E-Print Network [OSTI]

superconductor, with an onset at T-C approximate to 3.3 K. For x=10 and higher, no superconductivity was observed down to T=1.8 K. This represents a strong suppression of superconductivity with increasing Ga content, compared to Ba8Si46 with T-C approximate to 8...

Li, Yang; Zhang, Ruihong; Liu, Yang; Chen, Ning; Luo, Z. P.; Ma, Xingqiao; Cao, Guohui; Feng, Z. S.; Hu, Chia-Ren; Ross, Joseph H., Jr.

2007-01-01T23:59:59.000Z

176

Fabrication of a gated gallium arsenide heterostructure resonant tunneling diode  

E-Print Network [OSTI]

metallization process ivas required because separate potentials must be apphed to the top and base ol' the defined mesas. A potent&al is apphed to the top of the mesas to inject carriers for tunneling through the douhle barrier heterostructures A. rectifying... was a demetal/degrease cleanup process which re- moved any contamination that may have been nn the wal'er. This process ivas followed by deposition of AuGe/Ni on the ivafer's backside which ivill provide an ohmic contact after annealing. The backside...

Kinard, William Brian

1989-01-01T23:59:59.000Z

177

Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices  

SciTech Connect (OSTI)

Over the course of this program, Applied Materials, Inc., with generous support from the United States Department of Energy, developed a world-class three chamber III-Nitride epi cluster tool for low-cost, high volume GaN growth for the solid state lighting industry. One of the major achievements of the program was to design, build, and demonstrate the world’s largest wafer capacity HVPE chamber suitable for repeatable high volume III-Nitride template and device manufacturing. Applied Materials’ experience in developing deposition chambers for the silicon chip industry over many decades resulted in many orders of magnitude reductions in the price of transistors. That experience and understanding was used in developing this GaN epi deposition tool. The multi-chamber approach, which continues to be unique in the ability of the each chamber to deposit a section of the full device structure, unlike other cluster tools, allows for extreme flexibility in the manufacturing process. This robust architecture is suitable for not just the LED industry, but GaN power devices as well, both horizontal and vertical designs. The new HVPE technology developed allows GaN to be grown at a rate unheard of with MOCVD, up to 20x the typical MOCVD rates of 3{micro}m per hour, with bulk crystal quality better than the highest-quality commercial GaN films grown by MOCVD at a much cheaper overall cost. This is a unique development as the HVPE process has been known for decades, but never successfully commercially developed for high volume manufacturing. This research shows the potential of the first commercial-grade HVPE chamber, an elusive goal for III-V researchers and those wanting to capitalize on the promise of HVPE. Additionally, in the course of this program, Applied Materials built two MOCVD chambers, in addition to the HVPE chamber, and a robot that moves wafers between them. The MOCVD chambers demonstrated industry-leading wavelength yield for GaN based LED wafers and industry-leading uptime enabled in part by a novel in-situ cleaning process developed in this program.

Patibandla, Nag; Agrawal, Vivek

2012-12-01T23:59:59.000Z

178

Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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179

Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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180

Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism inS-4500II FieldVacancy-Induced Nanoscale Wire

182

Sandia National Laboratories: BES Web Highlight: Single-mode gallium  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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183

Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLasDelivered energy consumption by sectorlongUpdates byUserUtility-Scale SolarProgram

184

Local environment and composition of magnesium gallium layered double  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces and Interfaces Sample6,Local Correlations and Multi-FractalLocalhydroxides

185

Sandia National Laboratories: copper-indium-gallium-[di]selenide-based  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1development Sandia, NREL Releasehy-drogenmaterial elementswave

186

Electrochemical Solution Growth: Gallium Nitride Crystal Growth - Energy  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsing Zirconia Nanoparticles as Selective Sorbents . | EMSL forInnovation

187

High-Quality, Low-Cost Bulk Gallium Nitride Substrates  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeatMulti-Dimensional Subject:Ground Hawaii HIGHBraytonMaterials

188

Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate |  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:Year in3.pdfEnergy Health andofIanJenniferLeslie Pezzullo:

189

Post-Deposition Treatment Boosts CIGS Solar Cell Performance (Fact Sheet), NREL Highlights in Research & Development, NREL (National Renewable Energy Laboratory)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar Home Design Passive SolarCenterYouPortsmouth/PaducahNREL's use of

190

Photovoltaics: From the laboratory to the marketplace  

SciTech Connect (OSTI)

Photovoltaics (PV), the direct conversion of sunlight to electricity, is experiencing significant improvements in technology performance and lowered costs. Fostering these improvements, the SERI Photovoltaic Advanced Research and Development (PV AR D) Project supports research and provides services to the US PV industry. This paper presents the recent advances and future direction of the PV project. Research areas are Fundamental and Supporting Research, Advanced Thin-Film Materials, High-Efficiency Materials, Module Development, and Systems Development. Materials of interest include amorphous silicon, copper indium diselenide, cadmium telluride, crystalline silicon, gallium arsenide and related alloys, transparent conductors, antireflection coatings, substrates, and encapsulants. The PV project inherently provides technology transfer that helps industry shorten the time to bring R D advances to the marketplace. SERI annually performs over 10,000 measurements for the entire PV community, participates in collaborative research, and welcomes visiting scientists. Two specific areas of recently increased national focus are: (1) manufacturing processes for cost-effective PV modules, and (2) systems development for high-value utility applications. The SERI research approach is based on facilitating direct contact between industry, electric utilities, and others interested in PV technology. This approach heavily relies on SERI/industry partnerships. The arrangements vary to address generic and company-specific problems to improve the US industry's competitive position and accelerate greater electric utility deployment of PV systems. 5 refs., 5 figs., 6 tabs.

Basso, T.S.; Surek, T.; Thornton, J.

1991-03-01T23:59:59.000Z

191

NREL photovoltaic subcontract reports: Abstracts and document control information, 1 August 1992--31 July 1993  

SciTech Connect (OSTI)

This report contains document control information and abstracts for the National Renewable Energy Laboratory (NREL) subcontracted photovoltaic (PV) program publications. It also lists source information on additional publications that describe US Department of Energy (DOE) PV research activities. It is not totally exhaustive, so it lists NREL contacts for requesting further information on the DOE and NREL PV programs. This report covers the period from August 1, 1992, through July 31, 1993. This report is published periodically, with the previous one covering the period from August 1, 1991, through July 31, 1992. The purpose of continuing this type of publication is to help keep people abreast of specific PV interests, while maintaining a balance on the costs to the PV program. The information in this report is organized under PV technology areas: Amorphous Silicon Research; Polycrystalline Thin Films (including copper indium diselenide, cadmium telluride, and thin-film silicon); Crystalline Materials and Advanced Concepts (including silicon, gallium arsenide, and other group III-V materials); PV Manufacturing Technology Development (which may include manufacturing information for various types of PV materials).

Not Available

1993-09-01T23:59:59.000Z

192

Epitaxial growth of Cu,,In,Ga...Se2 on GaAs,,110... and A. Rockett  

E-Print Network [OSTI]

. INTRODUCTION The Cu(In, Ga)Se2 CIGS absorber layer in a recent record-efficiency CIGS solar cell1 has a 220.13 Commercially supplied ``epi-ready'' liquid- encapsulated Czo

Rockett, Angus

193

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1996. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar in research and development, specialty alloys, and other applications. Optoelectronic devices were used

194

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2006. One company in Utah  

E-Print Network [OSTI]

circuits. Optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes, photodetectors, specialty alloys, and other applications. Optoelectronic devices were used in areas such as aerospace

195

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1998. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

196

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2000. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

197

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2003. One company in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes, photodetectors, and solar cells, specialty alloys, and other applications. Optoelectronic devices were used in areas such as aerospace

198

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2012. One company in Utah  

E-Print Network [OSTI]

consumed was used in integrated circuits (ICs). Optoelectronic devices, which include laser diodes, light. Optoelectronic devices were used in areas such as aerospace, consumer goods, industrial equipment, medical

199

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2008. One company in Utah  

E-Print Network [OSTI]

circuits (ICs). Optoelectronic devices, which include laser diodes, light-emitting diodes (LEDs and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

200

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2001. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes, photodetectors, and solar cells, specialty alloys, and other applications. Optoelectronic devices were used in areas such as consumer goods

Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2005. One company in Utah  

E-Print Network [OSTI]

circuits. Optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes, photodetectors, specialty alloys, and other applications. Optoelectronic devices were used in areas such as aerospace

202

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2007. One company in Utah  

E-Print Network [OSTI]

circuits (ICs). Optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

203

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2009. One company in Utah  

E-Print Network [OSTI]

circuits (ICs). Optoelectronic devices, which include laser diodes, light-emitting diodes (LEDs and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

204

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2010. One company in Utah  

E-Print Network [OSTI]

circuits (ICs). Optoelectronic devices, which include laser diodes, light-emitting diodes (LEDs and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

205

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1999. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

206

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2011. One company in Utah  

E-Print Network [OSTI]

consumed was used in integrated circuits (ICs). Optoelectronic devices, which include laser diodes, light% was used in research and development, specialty alloys, and other applications. Optoelectronic devices were

207

(Data in kilograms of gallium content, unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 1997. Two companies in  

E-Print Network [OSTI]

in optoelectronic devices, which include light-emitting diodes (LED's), laser diodes, photodetectors, and solar and development, specialty alloys, and other applications. Optoelectronic devices were used in areas

208

(Data in kilograms of gallium content unless otherwise noted) Domestic Production and Use: No domestic primary gallium recovery was reported in 2004. One company in Utah  

E-Print Network [OSTI]

consumed was used in optoelectronic devices, which include light-emitting diodes (LEDs), laser diodes% was used in research and development, specialty alloys, and other applications. Optoelectronic devices were

209

Synthesis and characterization of visible emission from rare-earth doped aluminum nitride, gallium nitride and gallium aluminum nitride powders and thin films  

E-Print Network [OSTI]

74 (19) 2821 (1999). F. H. Spedding, Rare-earth Elements, inby the use of rare- earth elements as color emitters inpowders activated with rare-earth elements Eu 3+ , Tb 3+ ,

Tao, Jonathan Huai-Tse

2010-01-01T23:59:59.000Z

210

Synthesis and characterization of visible emission from rare-earth doped aluminum nitride, gallium nitride and gallium aluminum nitride powders and thin films  

E-Print Network [OSTI]

residential lighting using incandescent lights [2], as shownenergy used for the incandescent lamp is wasted as infraredlight source to replace incandescent lighting [1]. Figure

Tao, Jonathan Huai-Tse

2010-01-01T23:59:59.000Z

211

RealReal heterojunctionsheterojunctions Schottky barrier current  

E-Print Network [OSTI]

is the forward-bias current? #12;33 HeterostructureHeterostructure, thin film, cells: a lower, thin film, cells-EFFICIENCY CDTE AND CIGS THIN-FILM SOLAR CELLS: HIGHLIGHTS AND CHALLENGES. National Renewable Energy Laboratory. #12;44 HJ2:HJ2: CdSCdS/CIGS/CIGS EC EV Wide bandgap window, but what happens at the interfaces

Pulfrey, David L.

212

CIBS Solar Cell Development Final Scientific/Technical Report  

SciTech Connect (OSTI)

Efforts to fabricate and study a new photovoltaic material, copper indium boron diselenide (CuInxB1-xSe2 or CIBS), were undertaken. Attempts to prepare CIBS using sputtering deposition techniques resulted in segregation of boron from the rest of elements in the material. CIBS nanocrystals were prepared from the reaction of elemental Se with CuCl, InCl3, and boric acid in solution, but the product material quickly decomposed upon heating that was required in attempts to convert the nanocrystals into a thin film. The investigation of the reasons for the lack of CIBS material stability led to new structure-property studies of closely-related photovoltaic systems as well as studies of new solar cell materials and processing methods that could enhance the development of next-generation solar technologies. A detailed compositional study of CuIn1-xAlxSe2 (CIAS, a system closely related to CIBS) revealed a non-linear correlation between crystal lattice size and the Al/(In+Al) ratios with dual-phase formation being observed. A new nanocrystal-to-thin-film processing method was developed for the preparation of CuIn1-xGaxSe2 (CIGS) thin films in which colloidal Se particles are sprayed in contact with CuIn1-xGaxS2 nanoparticles and heated in an argon atmosphere with no other Se source in the system. The process is non-vacuum and does not require toxic gases such as Se vapor or H2Se. Expertise gained from these studies was applied to new research in the preparation of thin-film pyrite FeS2, an attractive earth-abundant candidate material for next-generation photovoltaics. Three methods successfully produced pure pyrite FeS2 films: sulfurization of sputtered Fe films, chemical bath deposition, and sulfurization of Fe2O3 sol-gel precursors. The last method produced pinhole-free films that may be viable for device development. Nickel, platinum, and possibly carbon would appear to serve as good ohmic contact materials. While CdS has a reasonable conduction band energy match to serve as an n-type buffer material in a pyrite FeS2-based solar cell, the less toxic SnS2 is being explored for this purpose.

Exstrom, Christopher L.; Soukup, Rodney J.; Ianno, Natale J.

2011-09-28T23:59:59.000Z

213

SAGE: Solar Neutrino Data from SAGE, the Russian-American Gallium Solar Neutrino Experiment  

DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

SAGE is a solar neutrino experiment based on the reaction 71Ga + n goes to 71Ge + e-. The 71Ge atoms are chemically extracted from a 50-metric ton target of Ga metal and concentrated in a sample of germane gas mixed with xenon. The atoms are then individually counted by observing their decay back to 71Ga in a small proportional counter. The distinguishing feature of the experiment is its ability to detect the low-energy neutrinos from proton-proton fusion. These neutrinos, which are made in the primary reaction that provides the Sun's energy, are the major component of the solar neutrino flux and have not been observed in any other way. To shield the experiment from cosmic rays, it is located deep underground in a specially built facility at the Baksan Neutrino Observatory in the northern Caucasus mountains of Russia. Nearly 100 measurements of the solar neutrino flux have been made during 1990-2000, and their combined result is a neutrino capture rate that is well below the prediction of the Standard Solar Model. The significant suppression of the solar neutrino flux that SAGE and other solar neutrino experiments have observed gives a strong indication for the existence of neutrino oscillations. [copied from the SAGE homepage at http://ewi.npl.washington.edu/SAGE/SAGE.html

SAGE Collaboration

214

Non-Destructive Spent Fuel Characterization with Semi-Conducting Gallium Arsinde Neutron Imaging Arrays  

SciTech Connect (OSTI)

High resistivity bulk grown GaAs has been used to produce thermal neutron imaging devices for use in neutron radiography and characterizing burnup in spent fuel. The basic scheme utilizes a portable Sb/Be source for monoenergetic (24 keV) neutron radiation source coupled to an Fe filter with a radiation hard B-coated pixellated GaAs detector array as the primary neutron detector. The coated neutron detectors have been tested for efficiency and radiation hardness in order to determine their fitness for the harsh environments imposed by spent fuel. Theoretical and experimental results are presented, showing detector radiation hardness, expected detection efficiency and the spatial resolution from such a scheme. A variety of advanced neutron detector designs have been explored, with experimental results achieving 13% thermal neutron detection efficiency while projecting the possibility of over 30% thermal neutron detection efficiency.

Douglas S. McGregor; Holly K. Gersch; Jeffrey D. Sanders; John C. Lee; Mark D. Hammig; Michael R. Hartman; Yong Hong Yang; Raymond T. Klann; Brian Van Der Elzen; John T. Lindsay; Philip A. Simpson

2002-01-30T23:59:59.000Z

215

The marine geochemistry of dissolved gallium: A comparison with dissolved aluminum  

SciTech Connect (OSTI)

Dissolved Ga concentrations in the pacific Ocean range from 2 to 30 picomolar: they are low in surface waters (2-12 pM), with a subsurface maximum at 150-300 m (6-17 pM), a mid-depth minimum from 500 to 1,000 m (4-10 pM) and increasing values with depth to a maximum in the bottom waters (12-30 pM). The highest concentrations are in the central gyre, with lower values toward the north and east where productivity and particle scavenging increase. Dissolved Ga concentrations in the surface waters of the northwest Atlantic are nearly an order of magnitude higher than in the central North pacific, with higher values in the Gulf Stream than in the continental slope boundary region. The vertical distributions and horizontal transects indicate three sources of dissolved Ga to the oceans. The surface distribution reflects an eolian source with no net fluvial input to the open ocean; the subsurface maximum (a feature not seen for North Pacific dissolved Al) is attributed to vertical exchange processes; the source for the deep waters of the North Pacific is from a sediment surface remineralization process or a pore water flux. Scavenging removal throughout the water column is evident in the vertical profiles for both dissolved Ga and Al, with intensified removal in the boundary regions where productivity and particle scavenging are at a maximum. Residence times of dissolved Ga in surface waters are nearly an order of magnitude longer than the corresponding values for Al.

Orians, K.J.; Bruland, K.W. (Univ. of California, Santa Cruz (USA))

1988-12-01T23:59:59.000Z

216

Tungsten-incorporation induced red-shift in the bandgap of gallium oxide thin films  

SciTech Connect (OSTI)

Tungsten (W) incorporated Ga{sub 2}O{sub 3} films were produced by co-sputter deposition. W-concentration was varied by the applied sputtering-power. The structure and optical properties of W-incorporated Ga{sub 2}O{sub 3} films were evaluated using X-ray diffraction, scanning electron microscopy, and spectrophotometric measurements. No secondary phase formation was observed in W-incorporated Ga{sub 2}O{sub 3} films. W-induced effects were significant on the structure and optical properties of Ga{sub 2}O{sub 3} films. The bandgap of Ga{sub 2}O{sub 3} films without W-incorporation was {approx}5 eV. Red-shift in the bandgap was noted with increasing W-concentration indicating the electronic structure changes in W-Ga{sub 2}O{sub 3} films. A functional relationship between W-concentration and optical property is discussed.

Rubio, E. J.; Ramana, C. V. [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States)] [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, Texas 79968 (United States)

2013-05-13T23:59:59.000Z

217

Radiation-Hardened Gallium Nitride Detector and Arrays for Fusion Diagnostics  

SciTech Connect (OSTI)

This poster reports testing to confirm that GaN devices exhibit the extreme radiation hardness needed for use at the NIF, functioning properly after 1x10{sup 12} protons/cm{sup 2} proton irradiation in one year.

Sun, K. X., and MacNeil, L.

2011-09-08T23:59:59.000Z

218

Process development for the fabrication of monolithic optoelectronic resonators on gallium arsenide substrates  

E-Print Network [OSTI]

loss microwave structure, were electroplated on the uncovered regions of the Au-Ge and Ni. After photoresist removal, the Au-Ge and Ni layers were removed from the unwanted regions. A backside metal was deposited and the sample was annealed. The four... D. Electron Bes. m Evaporation E. Fabrication of Photolithographic Masks 1, Plain Ring Resonator Mask 2. Notched Resons. tor Mask 3. Linear Resonator Mask 4. Slit Ring Resonator Mask F. Photolithography G. Electroplating H. Layer Removals I...

Fairchild, Brock Wilson

1990-01-01T23:59:59.000Z

219

E-Print Network 3.0 - aluminium gallium indium Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

An advanced diffusion model to identify emergent research issues: the case of optoelectronic devices Summary: Aluminium arsenides Ge-Si alloys Avalanche photodiodes Indium...

220

The determination of titanium, germanium and gallium by charged particle activation analysis  

E-Print Network [OSTI]

V FWHM for the 1. 332 MeV y-ray of Co; Peak-to-Compton ratio: 20. 1; 60 Efficiency relative to a 3 x 3 inch NaI (Tl) detector for the 1. 332 MeV y-ray measured at 25 cm distance: 3 05%%d Data Ac uisition and Processin Data was acquired via a 4096... of the reaction had to be sufficiently high to make measurements of ppm level concentrations feasible. The thick target yields were calculated by correlating the activities of the particular Y-rays 16 back to the time at the end of the irradiation...

Novak, Leo Robert

1975-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

The equilibrium state of hydrogen in gallium nitride: Theory and experiment  

SciTech Connect (OSTI)

Formation energies and vibrational frequencies for H in wurtzite GaN were calculated from density functional theory and used to predict equilibrium state occupancies and solid solubilities for p-type, intrinsic, and n-type material. The solubility of deuterium (D) was measured at 600--800 C as a function of D{sub 2} pressure and doping and compared with theory. Agreement was obtained by reducing the H formation energies 0.2 eV from ab-initio theoretical values. The predicted stretch-mode frequency for H bound to the Mg acceptor lies 5% above an observed infrared absorption attributed to this complex. It is concluded that currently recognized H states and physical processes account for the equilibrium behavior of H examined in this work.

MYERS JR.,SAMUEL M.; WRIGHT,ALAN F.; PETERSEN,GARY A.; SEAGER,CARLETON H.; WAMPLER,WILLIAM R.; CRAWFORD,MARY H.; HAN,JUNG

2000-04-17T23:59:59.000Z

222

Diffusion, Uptake and Release of Hydrogen in p-type Gallium Nitride: Theory and Experiment  

SciTech Connect (OSTI)

The diffusion, uptake, and release of H in p-type GaN are modeled employing state energies from density-function theory and compared with measurements of deuterium uptake and release using nuclear-reaction analysis. Good semiquantitative agreement is found when account is taken of a surface permeation barrier.

MYERS JR.,SAMUEL M.; WRIGHT,ALAN F.; PETERSEN,GARY A.; WAMPLER,WILLIAM R.; SEAGER,CARLETON H.; CRAWFORD,MARY H.; HAN,JUNG

2000-06-27T23:59:59.000Z

223

Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits  

E-Print Network [OSTI]

and Applications, edited by T. M. Tritt, ( Kluwer Academic /and Applications, edited by T. M. Tritt, ( Kluwer Academic /and Applications, edited by T. M. Tritt, ( Kluwer Academic /

Bickford, Justin Robert

2008-01-01T23:59:59.000Z

224

Growth Kinetics and Doping of Gallium Nitride Grown by rf-Plasma Assisted Molecular Beam Epitaxy  

E-Print Network [OSTI]

Thomas H. Myers, Ph.D., Chair Larry E. Halliburton, Ph.D. Nancy C. Giles, Ph.D. Charter D. Stinespring Giles, Dr. Charter Stinespring, Dr. Larry Halliburton, and Dr. Mohindar Seehra. In addition, I would

Myers, Tom

225

Fabrication of an optically driven 10 GHz ring resonator on a gallium arsenide substrate  

E-Print Network [OSTI]

/D converters, optical detectors, dc to rf converters, and millimeter-wave or microwave generators. Photoconductors can be easily integrated with microelectronic devices as well as microwave circuits. Recently, an optically excited photoconductive switch... is the barrier height and y, is the electron affinity for the semiconductor. Current flow at a metal-semiconductor barrier is due mainly to majority carriers. The four major current transport methods are thermionic emission over the barrier, quantum...

McGregor, Douglas Scott

1989-01-01T23:59:59.000Z

226

Gallium-68 Bioorthogonal Tetrazine Polymers for the Multistep Labeling of Cancer Biomarkers /  

E-Print Network [OSTI]

M, Fox JM (2008) Tetrazine ligation: fast bioconjugationR, Hilderbrand SA (2008) Tetrazine-Based Cycloadditions:of Cancer Cells through a Tetrazine/trans- Cyclooctene

Nichols, Brandon Edward

2013-01-01T23:59:59.000Z

227

Sparse gallium arsenide to silicon metal waferbonding for heterogeneous monolithic microwave integrated circuits  

E-Print Network [OSTI]

is limited by the cold-wall chamber design and the porousrepeatability. The cold-wall chamber design also limits the

Bickford, Justin Robert

2008-01-01T23:59:59.000Z

228

Gallium arsenide-based ternary compounds and multi-band-gap solar cell research  

SciTech Connect (OSTI)

Aim of this contract is the achievement of a high-efficiency, low-cost solar cell. The basic approach to the problem is centered upon the heteroepitaxial growth of a III-V compound material onto a single-crystal silicon wafer. The growth technique employed is metalorganic chemical vapor deposition. The silicon wafer may serve as a mechanical substrate and ohmic contact for a single-junction device, or may contain a p-n junction of its own and form the bottom cell of a two junction tandem solar cell structure. The III-V material for the single-junction case is GaAs and for the two-junction case is either GaAlAs or GaAsP, either material having the proper composition to yield a band gap of approximately 1.7 eV. Results achieved in this contract include the following: (1) a 17.6% efficient GaAs-on-Si solar cell; (2) an 18.5% efficient GaAs-on-Si concentrator solar cell at 400 suns; (3) a 24.8% efficient GaAs-on-GaAs solar cell; (4) a 28.7% efficient GaAs-on-GaAs concentrator solar cell at 200 suns; (5) measurement of the effects of dislocation density and emitter doping on GaAs cells; and (6) improvements in the growth process to achieve reproducible thin AlGaAs window layers with low recombination velocities and environmental stability.

Vernon, S. (Spire Corp., Bedford, MA (United States))

1993-02-01T23:59:59.000Z

229

Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets  

SciTech Connect (OSTI)

We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(×2.1±1) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

2014-09-21T23:59:59.000Z

230

Heat treatment of bulk gallium arsenide using a phosphosilicate glass cap  

SciTech Connect (OSTI)

n-type bulk GaAs crystals, capped with chemically vapor-deposited phosphosilicate glass, were heat treated at temperatures in the range of 600 to 950 /sup 0/C. Measurements on Schottky diodes and solar cells fabricated on the heat-treated material, after removal of a damaged surface layer, show an increase in free-carrier concentration, in minority-carrier-diffusion length, and in solar-cell short-circuit current. The observed changes are attributed to a removal of lifetime-reducing acceptorlike impurities, defects, or their complexes.

Mathur, G.; Wheaton, M.L.; Borrego, J.M.; Ghandhi, S.K.

1985-05-15T23:59:59.000Z

231

Synthesis, characterization, and biotemplated assembly of indium nitride and indium gallium nitride nanoparticles  

E-Print Network [OSTI]

A low-temperature, ambient pressure solution synthesis of colloidal InN nanoparticles is presented. This synthesis utilizes a previously dismissed precursor and results in individual, non-aggregated nanoparticles with ...

Hsieh, Jennifer Chia-Jen

2010-01-01T23:59:59.000Z

232

amorphous indium-gallium-zinc oxide: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: alloy of composition correspond- ing to the metallic components of the superconduct- ing oxides respectivement. Abstract. - Previous quenching experiments on 2212...

233

The Hall mobility measurement of Liquid Phase Epitaxy grown aluminum gallium arsenide  

E-Print Network [OSTI]

allows lasing action at or above room temperature. The utility of AI?Ga& ?As is based on the close latti&e match to GaAs over a range of Al mole fraction between zero and one(Fig. 1)IS). This is significant since heterojunctions between s...-type by occupying the site normally orc?pi& d by th& gro?p V element, ar?l acting as a donor. For the p-type of AI?Ga& ?As. %1g was used as an i&np?ri&y. Fig. 10 and Fig. 11 show I he r&'lal ionship bet wc?n th& in&p?r&I& & o???& r?t ?&n??&l t he alorr&i& weight...

Choi, Young-Shig

2012-06-07T23:59:59.000Z

234

Gallium Arsenide-Based Readout Electronics Thomas J. Cunningham and Eric R. Fossum  

E-Print Network [OSTI]

susceptible to radiation and hot carrier damage than are MaS-based structures. This should result in increased;among these has been the construction of optical emitters such as LEDs and lasers, since efficient

Fossum, Eric R.

235

E-Print Network 3.0 - abdominal gallium-67 citrate Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of the Mg2+ Summary: Chapter iii Impact of the Mg2+ -citrate transporter CitM on heavy metal toxicity in Bacillus... M that is specific for the complex of citrate and Mg2+ but is...

236

Commercialization of gallium nitride nanorod arrays on silicon for solid-state lighting  

E-Print Network [OSTI]

One important component in energy usage is lighting, which is currently dominated by incandescent and fluorescent lamps. However, due to potentially higher efficiencies and thus higher energy savings, solid-state lighting ...

Wee, Qixun

2008-01-01T23:59:59.000Z

237

Dependence of carrier mobility on an electric field in gallium selenide crystals  

SciTech Connect (OSTI)

The dependence of the mobility of charge carriers on voltage has been studied in undoped GaSe single crystals and crystals doped with gadolinium; the latter crystals have exhibited various values of dark resistivity ({rho}{sub d.r} Almost-Equal-To 10{sup 4}-10{sup 8} {Omega} cm at 77 K) and of the doping level (N = 10{sup -5}, 10{sup -4}, 10{sup -3}, 10{sup -2}, and 10{sup -1} at %). It is established that the dependence of the charge-carrier mobility on the electric field applied to the sample E {<=} 10{sup 2} V/cm is observed in undoped high-resistivity GaSe crystals ({rho}{sub d.r} {>=} 10{sup 4} {Omega} cm) and in lightly doped GaSe crystals (N {<=} 10{sup -2} at %) in the region of T {<=} 150 K. It is found that this dependence is not related to heating of the charge carriers by an electric field; rather, it is caused by elimination of drift barriers as a result of injection.

Abdinov, A. Sh., E-mail: abdinov_axmed@yahoo.com; Babaeva, R. F., E-mail: Babaeva-Rena@yandex.ru; Rzayev, R. M. [Baku State University (Azerbaijan)

2012-06-15T23:59:59.000Z

238

High-Quality, Low-Cost Bulk Gallium Nitride Substrates | Department of  

Broader source: Energy.gov (indexed) [DOE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarly Career Scientists'Montana.ProgramJulietip sheetK-4In 2013 many| Department HIGHImageDepartmentEnergy

239

Accelerated Testing of HT-9 with Zirconia Coatings Containing Gallium using  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc Documentation RUCProductstwrmrAre the Effects ofAbout ScienceAbout OakMeasurement

240

Nanovoid Formation and Annihilation in Gallium Nanodroplets under Lithiation-Delithiation Cycling  

E-Print Network [OSTI]

, United States Renewable Energy Laboratory, Institute of Physics, Chinese Academy of Sciences, Beijing-to-solid phase transition, forming a crystalline phase (LixGa) with 160% volume expansion. Owing to the uneven Li delithiation, the reverse phase transition occurred, accompanied with the nucleation and growth of a nanosized

Chen, Long-Qing

Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Gallium Safety in the Laboratory INEEL/CON-03-00078  

Office of Scientific and Technical Information (OSTI)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinan antagonist Journal Article: Crystal structureComposite--FOR IMMEDIATEDOEFinal R eport

242

Effect of Gallium Nitride Template Layer Strain on the Growth of  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed NewcatalystNeutronEnvironmentZIRKLE FRUITYear 1MATERIALSTiO2(110).

243

E-Print Network 3.0 - analysis gallium-67 lung Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ILD... , interstitial lung disease, texture analysis, co-occurrence matrix, computed tomography I. INTRODUCTION Computer... %. The aim of our work is to develop a novel texture ......

244

Gallium solar neutrino experiments: Absorption cross sections, neutrino spectra, and predicted event rates  

E-Print Network [OSTI]

solar neutrino sources with standard energy spectra, and for laboratory sources of 51 Cr and 37 Ar; the calculations include, where appropriate, the thermal energy of fusing solar ions and use improved nuclear the energy spectrum of solar neutrinos. Theoretical uncertainties are estimated for cross sections

Bahcall, John

245

Novel Materials Development for Polycrystalline Thin-Film Solar Cells: Final Subcontract Report, 26 July 2004--15 June 2008  

SciTech Connect (OSTI)

Focus on player interfacial assessment using Schottky barrier and heterojunction theory, and analysis of p-windows for CIGS and CdTe cells.

Keszler, D. A.; Wager, J. F.

2008-11-01T23:59:59.000Z

246

E-Print Network 3.0 - absorbents Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Astronomy Observatory Collection: Physics 13 Potential for High Efficiency in CIGS Thin Film Solar Cells: A Laboratory Perspective Summary: a summary of our work with the...

247

E-Print Network 3.0 - absorbance Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Astronomy Observatory Collection: Physics 13 Potential for High Efficiency in CIGS Thin Film Solar Cells: A Laboratory Perspective Summary: a summary of our work with the...

248

amiga project quantification: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of the isolation of 950 CIG galaxies CERN Preprints Summary: The role of the environment on galaxy evolution is still not fully understood. In order to quantify and...

249

E-Print Network 3.0 - assessment quarterly technical Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Engineering ; Renewable Energy 29 Assembly and Testing of an On-Farm Manure to Energy Conversion BMP for Animal Waste Pollution Control Summary: Control FY07 CIG program...

250

additional cu layer: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

PX-CIGS used in photovoltaicphotovoltaic solar cells. The ef?ciency of labora- tory thin-?photovoltaic device. Spectroscopic ellipsometry measurements of polycrystalline...

251

Microsoft Word - FY 2003 Annual Report Rev10 02_10_04.doc  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

formulation, which has been under development at Sandia since 1997. Efficient Photovoltaic Solar Cells Becoming Widely Deployed CIGS (Cu(In,Ga)Se 2 ) is a...

252

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells  

DOE Patents [OSTI]

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

Ramanathan, Kannan V. (Lakewood, CA); Contreras, Miguel A. (Golden, CA); Bhattacharya, Raghu N. (Littleton, CA); Keane, James (Lakewood, CA); Noufi, Rommel (Golden, CA)

1999-01-01T23:59:59.000Z

253

The radiation bio-effects of gallum-72 on leukemic cells via a gallium-transferrin complex  

E-Print Network [OSTI]

of the beta is about 30'/o to 40'/o of the maximum energy. An anti-neutrino is emitted simultaneously, carrying the remainder of the energy. Values listed for beta energies are the maximum values unless otherwise stated (Cember 1996). Prominent beta...

Forbes, Christen Douglas

2012-06-07T23:59:59.000Z

254

The design, construction, and testing of a nuclear fuel rod thermal simulation system to study gallium/Zircaloy interactions  

E-Print Network [OSTI]

friends for their unending support and patience during this project. Thank you so much! NOMENCLATURE Abbreviations and Acronyms WGPu- weapons grade plutonium DOE- Department of Energy MOX- mixed oxide fuel WG MOX- weapons grade MOX fuel LWR- light... to be employed were immobilization and fissioning the WGPu as mixed oxide (MOX) fuel in commercial power reactors. Both approaches have many advantages and disadvantages and are currently being studied by scientists and engineers all over the world. The use...

Allison, Christopher Curtis

2012-06-07T23:59:59.000Z

255

Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride  

SciTech Connect (OSTI)

Al{sub 2}O{sub 3} films, HfO{sub 2} films, and HfO{sub 2}/Al{sub 2}O{sub 3} stacked structures were deposited on n-type, Ga-face, GaN wafers using plasma-enhanced atomic layer deposition (PEALD). The wafers were first treated with a wet-chemical clean to remove organics and an in-situ combined H{sub 2}/N{sub 2} plasma at 650 Degree-Sign C to remove residual carbon contamination, resulting in a clean, oxygen-terminated surface. This cleaning process produced slightly upward band bending of 0.1 eV. Additional 650 Degree-Sign C annealing after plasma cleaning increased the upward band bending by 0.2 eV. After the initial clean, high-k oxide films were deposited using oxygen PEALD at 140 Degree-Sign C. The valence band and conduction band offsets (VBOs and CBOs) of the Al{sub 2}O{sub 3}/GaN and HfO{sub 2}/GaN structures were deduced from in-situ x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). The valence band offsets were determined to be 1.8 and 1.4 eV, while the deduced conduction band offsets were 1.3 and 1.0 eV, respectively. These values are compared with the theoretical calculations based on the electron affinity model and charge neutrality level model. Moreover, subsequent annealing had little effect on these offsets; however, the GaN band bending did change depending on the annealing and processing. An Al{sub 2}O{sub 3} layer was investigated as an interfacial passivation layer (IPL), which, as results suggest, may lead to improved stability, performance, and reliability of HfO{sub 2}/IPL/GaN structures. The VBOs were {approx}0.1 and 1.3 eV, while the deduced CBOs were 0.6 and 1.1 eV for HfO{sub 2} with respect to Al{sub 2}O{sub 3} and GaN, respectively.

Yang Jialing; Eller, Brianna S.; Zhu Chiyu; England, Chris; Nemanich, Robert J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)

2012-09-01T23:59:59.000Z

256

Organometallic vapor-phase homoepitaxy of gallium arsenide assisted by a downstream hydrogen afterglow plasma in the growth region  

E-Print Network [OSTI]

of the trimeth- ylgallium (TMGa) for homoepitaxial GaAs. They found in direct comparison of the pure thermal-insulating) substrate is loaded into the depo- sition reactor of Fig. 1 without any chemical degreasing or polishing

Collins, George J.

257

Silicon-germanium/gallium phosphide material in high power density thermoelectric modules. Final report, February 1980--September 1981  

SciTech Connect (OSTI)

This is the final report of work on the characterization of an improved Si-Ge alloy and the fabrication of thermoelectric devices. The improved Si-Ge alloy uses a small addition of GaP in n- and p- type 80 at.% Si-20 at.% Ge; this addition reduces the thermal conductivity, thereby increasing its figure of merit and conversion efficiency. The thermoelectric devices fabricated include multicouples intended for use in Radioisotope Thermoelectric Generators (RTGs) and ring-type modules intended for use with nuclear reactor heat sources. This report summarizes the effort in the material as well as the device areas and discusses individual phases of each area. Results should form basis for further effort.

Not Available

1981-12-31T23:59:59.000Z

258

Journal of Engineering Physics and Thermophysics, VoL 71, No..5, 1998 SIMULATION OF A GALLIUM ARSENIDE RUNNING  

E-Print Network [OSTI]

a single monolithic circuit are the main tendencies in the development of superhigh-frequency solid-GaAs-type semiconductors with transport of electrons between valleys [3 ] along with works in the field of creating HHT this constitutes the subject matter of this work. Model and Basic Relations. As was shown in a number of our works

Harilal, S. S.

259

DESIGN AND ANALYSIS OF AN INTEGRATED PULSE MODULATED S-BAND POWER AMPLIFIER IN GALLIUM NITRIDE PROCESS  

SciTech Connect (OSTI)

The design of power amplifiers in any semi-conductor process is not a trivia exercise and it is often encountered that the simulated solution is qualitatively different than the results obtained. Phenomena such as oscillation occurring either in-band or out of band and sometimes at subharmonic intervals, continuous spectrum noticed in some frequency bands, often referred to as chaos, and jumps and hysteresis effects can all be encountered and render a design useless. All of these problems might have been identified through a more rigorous approach to stability analysis. Designing for stability is probably the one area of amplifier design that receives the least amount of attention but incurs the most catastrophic of effects if it is not performed properly. Other parameters such as gain, power output, frequency response and even matching may suitable mitigation paths. But the lack of stability in an amplifier has no mitigating path. In addition to of loss of the design completely there are the increased production cycle costs, costs involved with investigating and resolving the problem and the costs involved with schedule slips or delays resulting from it. The Linville or Rollett stability criteria that many microwave engineers follow and rely exclusively on is not sufficient by itself to ensure a stable and robust design. It will be shown that the universal belief that unconditional stability is obtained through an analysis of the scattering matrix S to determine if 1 and |{Delta}{sub S}| < 1 is only part of the procedure and other tools must be used to validate the criteria. The research shown contributes to the state of the art by developing a more thorough stability design technique for designing amplifiers of any class, whether that be current mode or switch mode, than is currently undertaken with the goal of obtaining first pass design success.

STEVE SEDLOCK

2012-04-04T23:59:59.000Z

260

Förster Resonance Energy Transfer Mediated White-Light-Emitting Rhodamine Fluorophore Derivatives-Gamma Phase Gallium Oxide Nanostructures.  

E-Print Network [OSTI]

??The global lighting source energy consumption accounts for about 22% of the total electricity generated. New high-efficiency solid-state light sources are needed to reduce the… (more)

Chiu, Wan Hang Melanie

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

An experimental study of the solubility of Gallium(III) oxide in HCl-bearing water vapour  

E-Print Network [OSTI]

at 200 °C at a pH of $4. The values are very similar to those estimated from data for geothermal wells

Devernal, Anne

262

GALLIUM NITRIDE INTEGRATED GAS/TEMPERATURE SENSORS FOR FUEL CELL SYSTEM MONITORING FOR HYDROGEN AND CARBON MONOXIDE  

E-Print Network [OSTI]

on field effect devices using catalytic metal gates on silicon carbide substrates has been reviewed (Spetz-10%) of transition metals such as copper, silver, and chromium (Feinstein et al 1997 and Pyke 1993). High temperature. Introduction Gas sensing and analysis based on gas adsorption on a catalytic metal surface has been extensively

263

Bismuth in gallium arsenide: Structural and electronic properties of GaAs{sub 1-x}Bi{sub x} alloys  

SciTech Connect (OSTI)

The structural and electronic properties of cubic GaAs{sub 1-x}Bi{sub x} alloys with bismuth concentration 0.0, 0.25, 0.50, 0.75 and 1.0 are studied using the 'special quasi-random structures' (SQS) approach of Zunger along with the generalized gradient approximation (GGA) and the Engel-Vosko generalized gradient approximation (EV-GGA). The lattice constant, bulk modulus, derivative of bulk modulus and energy gap vary with bismuth concentration nonlinearly. The present calculations show that the band gap decreases substantially with increasing bismuth concentration and that spin-orbit coupling influences the nature of bonding at high Bi concentrations. - Graphical abstract: Bowing effect of spin-orbit split-off band values versus Bi content with and without spin-orbit coupling for GaAs{sub 1-x}Bi{sub x} (at x=0.25, 0.50 and 0.75). Calculations are done with GGA. Highlights: Black-Right-Pointing-Pointer Structural and electronic properties of GaAs{sub 1-x}Bi{sub x} alloys were studied. Black-Right-Pointing-Pointer We present results of lattice constant, energy gap, bulk modulus and derivative. Black-Right-Pointing-Pointer The band gap decreases substantially with increasing Bi concentration. Black-Right-Pointing-Pointer Calculations of the density of states and charge densities are also presented. Black-Right-Pointing-Pointer We have performed calculations without and with spin-orbit coupling.

Reshak, Ali Hussain, E-mail: maalidph@yahoo.co.uk [School of Complex Systems, FFWP-South Bohemia University, Nove Hrady 37333 (Czech Republic); School of Material Engineering, Malaysia University of Perlis, P.O Box 77, d/a Pejabat Pos Besar, 01007 Kangar, Perlis (Malaysia); Kamarudin, H. [School of Material Engineering, Malaysia University of Perlis, P.O Box 77, d/a Pejabat Pos Besar, 01007 Kangar, Perlis (Malaysia); Auluck, S. [National Physical Laboratory Dr. KS Krishnan Marg, New Delhi 110012 (India); Kityk, I.V. [Electrical Engineering Department, Technological University of Czestochowa, Al. Armii Krajowej 17/19, Czestochowa (Poland)

2012-02-15T23:59:59.000Z

264

Physics based analytical modelling of Gallium Nitride(GaN) MESFET considering different ion implantation energy with high temperature annealing.  

E-Print Network [OSTI]

??A physics based analytical model of ion implanted GaN MESFET has been presented considering high temperature annealing effects. Choosing appropriate activation energy of impurity atoms,… (more)

Raghavan, Vinay

2015-01-01T23:59:59.000Z

265

The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior  

SciTech Connect (OSTI)

In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.

Yang, Tsung-Jui; Wu, Yuh-Renn, E-mail: yrwu@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Shivaraman, Ravi; Speck, James S. [Department of Materials, University of California, Santa Barbara, California 93106 (United States)

2014-09-21T23:59:59.000Z

266

Accomplishments | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

water. (NREL) 1991 Gallium Indium PhosphideGallium Arsenide Tandem Solar Cell: A light, highly efficient solar cell that has become the world's standard for powering...

267

Accelerated Testing of HT-9 with Zirconia Coatings Containing...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of HT-9 with Zirconia Coatings Containing Gallium using Raman Spectroscopy and XPS. Accelerated Testing of HT-9 with Zirconia Coatings Containing Gallium using Raman Spectroscopy...

268

Structure, Morphology, and Optical Properties of Amorphous and...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium Oxide Thin Films. Structure, Morphology, and Optical Properties of Amorphous and Nanocrystalline Gallium...

269

Characterization of Damp-Heat Degradation of CuInGaSe2 Solar Cell Components and Devices by (Electrochemical) Impedance Spectroscopy: Preprint  

SciTech Connect (OSTI)

This work evaluated the capability of (electrochemical) impedance spectroscopy (IS, or ECIS as used here) to monitor damp heat (DH) stability of contact materials, CuInGaSe2 (CIGS) solar cell components, and devices. Cell characteristics and its variation of the CIGS devices were also examined by the ECIS.

Pern, F. J. J.; Noufi, R.

2011-09-01T23:59:59.000Z

270

Lessons from IT Ecosystems Michael Kster  

E-Print Network [OSTI]

-Transport-Systems Smart-Energy-Systems etc. Smart Airport as a smaller instance of a Smart City Michael Köster · CIG, TU and interact massively. IT Ecosystem: analogue to biological ecosystems based on the balance between and continuously evolving IT Ecosystems requires deep understanding of this balance. Michael Köster · CIG, TU

Zachmann, Gabriel

271

Researchers develop electrodeposition process to deposit coatings on substrates, eliminate the expensive physical vapor  

E-Print Network [OSTI]

the expensive physical vapor deposition step, and improve device quality. CuIn1-xGaxSe2 (CIGS) solar cells have composition was adjusted by physical vapor deposition method. At present, we are fabricating CIGS-based solar). 2 R. N. Bhattacharya, W. Batchelor, J. F. Hiltner, and J. R. Sites, Appl. Phys. Lett., 75, 1431

272

Final Report for Department of Energy/EERE (for public release)  

SciTech Connect (OSTI)

Developing CIGS solar cells calls for the understanding of materials and processing in order to translate the record small efficiency to module and the strategy to produce thin cells for materials and processing saving. This project has exploited nanostructuring of CIG solar cells, including nanowires and nanotextured substrates. We showed that nanowires function as well-defined CIGS-CdS p-n junction for understanding the chemical fluctuation, defect formation interface and grain boundary behaviors and the effect of ion diffusion, which are important but complicated issues for solar cell fabrication. We have also demonstrated effective nanoscale photon management on nanotextured substrate to provide opportunity for thin CIGS solar cells. We also developed the scalable methods for producing such nanotextured substrates. The research output in this project helps advancing the CIGS solar cells and broadly other solar cell technologies in cost reduction per unit power.

Yi Cui

2012-04-30T23:59:59.000Z

273

On the Mass Eigenstate Composition of the 8B Neutrinos from the Sun  

E-Print Network [OSTI]

The present data of gallium experiments provide indirectly the only experimental limit on the fraction of $\

A. Kopylov; V. Petukhov

2006-08-14T23:59:59.000Z

274

Method for the chemical separation of GE-68 from its daughter Ga-68  

DOE Patents [OSTI]

The present invention is directed to a generator apparatus for separating a daughter gallium-68 radioisotope substantially free of impurities from a parent gernanium-68 radioisotope, including a first resin-containing column containing parent gernanium-68 radioisotope and daughter gallium-68 radioisotope, a source of first eluent connected to said first resin-containing column for separating daughter gallium-68 radioisotope from the first resin-containing column, said first eluent including citrate whereby the separated gallium is in the form of gallium citrate, a mixing space connected to said first resin-containing column for admixing a source of hydrochloric acid with said separated gallium citrate whereby gallium citrate is converted to gallium tetrachloride, a second resin-containing column for retention of gallium-68 tetrachloride, and, a source of second eluent connected to said second resin-containing column for eluting the daughter gallium-68 radioisotope from said second resin-containing column.

Fitzsimmons, Jonathan M.; Atcher, Robert W.

2010-06-01T23:59:59.000Z

275

Processing Materials Devices and Diagnostics for Thin Film Photovoltaics: Fundamental and Manufacturability Issues; Final Report, 5 September 2001 - 31 May 2008  

SciTech Connect (OSTI)

The critical issues addressed in this study on CIGS, CdTe, and a-Si modules will provide the science and engineering basis for developing viable commercial processes and improved module performance.

Birkmire, R. W.; Shafarman, W. N.; Eser, E.; Hegedus, S. S.; McCandless, B. E.; Dobson, K. D.; Bowden, S.

2009-04-01T23:59:59.000Z

276

Reliability Issues for Photovoltaic Modules (Presentation)  

SciTech Connect (OSTI)

Si modules good in field; new designs need reliability testing. CdTe & CIGS modules sensitive to moisture; carefully seal. CPV in product development stage; benefits from expertise in other industries.

Kurtz, S.

2009-10-01T23:59:59.000Z

277

E-Print Network 3.0 - abstracts quarterly update Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Environmental Sciences and Ecology 6 Assembly and Testing of an On-Farm Manure to Energy Conversion BMP for Animal Waste Pollution Control Summary: Control FY07 CIG program...

278

E-Print Network 3.0 - assistance program preliminary Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Engineering ; Biology and Medicine 74 Assembly and Testing of an On-Farm Manure to Energy Conversion BMP for Animal Waste Pollution Control Summary: Control FY07 CIG program...

279

E-Print Network 3.0 - assistance program quarterly Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

at San Diego Collection: Engineering 3 Assembly and Testing of an On-Farm Manure to Energy Conversion BMP for Animal Waste Pollution Control Summary: Control FY07 CIG program...

280

E-Print Network 3.0 - applications quarterly environmental Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

at San Diego Collection: Engineering 3 Assembly and Testing of an On-Farm Manure to Energy Conversion BMP for Animal Waste Pollution Control Summary: Control FY07 CIG program...

Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

E-Print Network 3.0 - applications quarterly technical Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

technical Page: << < 1 2 3 4 5 > >> 1 Assembly and Testing of an On-Farm Manure to Energy Conversion BMP for Animal Waste Pollution Control Summary: Control FY07 CIG program...

282

Zn3P2 and Cu2O substrates for solar energy conversion.  

E-Print Network [OSTI]

??Zinc phosphide (Zn3P2) and cuprous oxide (Cu2O) are promising and earth-abundant alternatives to traditional thin film photovoltaics materials such as CIGS, CdTe, and a-Si. We… (more)

Kimball, Gregory Michael

2012-01-01T23:59:59.000Z

283

asi tiina kster: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

1|19 12;1 IT Ecosystems IT Ecosystems Michael Kster CIG, TU Clausthal Ga Zachmann, Gabriel 12 Asie du Sud : les amateurs-experts de la violence collective Par Laurent...

284

ALGEBRA HOMOLOGICZNA, WYK#AD 13 Zak#adamy, #e X jest normaln# przestrzeni# topologiczn#.  

E-Print Network [OSTI]

). Wtedy mamy kr#tki ci#gh dok#adny snop#w 0 ! F ! I ! G, kt#ry daje nam d#ugi ci#g dok#adny grup abelowych

Kowalski, Piotr

285

Innovative Characterization of Amorphous and Thin-Film Silicon for Improved Module Performance: 28 April 2005 - 15 September 2008  

SciTech Connect (OSTI)

This report focuses on (1) characterizing nc-Si:H from United Solar; (2) studying Si,Ge:H alloys deposited by HWCVD; and (3) characterizing CIGS films and relating to cell performance parameters.

Cohen, J. D.

2009-12-01T23:59:59.000Z

286

Preparation of silicon substrates for gallium-arsenide solar cells by electron-beam-pulse processing. Annual technical report, March 15, 1980-March 15, 1981  

SciTech Connect (OSTI)

In the past year a process has been developed for creating high-quality epitaxial layers of germanium on silicon substrates using rapid heating and cooling with a pulsed electron beam. This single-crystal germanium coating is the key to the production of high efficiency GaAs solar cells on low-cost silicon substrates in an economical manner. Thin (less than or equal to 1 ..mu..m) layers of Ge have been deposited on Si wafers by chemical vapor deposition (CVD) in single-crystal form or by vacuum evaporation in amorphous or polycrystalline form. The CVD films have given the best results, with good crystallinity and electrical properties as deposited. A persistent problem with surface roughness in the as-deposited films has been overcome by pulsed electron beam melting of the near-surface region in time periods on the order of a microsecond. The brief molten period smooths the surface features without compromising the crystallinity, electrical properties, or interfacial abruptness of the Ge film. These layers are of a quality suitable for further evaluation by GaAs growth and cell processing in the next phase of the program. Pulsed electron beam processing also serves a vital function for the evaporated Ge films, which are melted by the beam and recrystallized on the Si substrates, epitaxial single crystal Ge layers result from amorphous or polycrystalline starting films. To date results have not been as satisfactory as for CVD films; contamination from several sources has been identified as a problem. Many of these sources have been eliminated, so that a decision on the intrinsic limitations of the evaporated film approach should be made in the near future.

Tobin, S.P.

1981-05-01T23:59:59.000Z

287

Formation of Porous Layers by Electrochemical Etching of Germanium and Gallium Arsenide for Cleave Engineered Layer Transfer (CELT) Application in High Efficiency Multi-Junction Solar Cells  

E-Print Network [OSTI]

film photovoltaics [1]. This roughly doubling of efficiencyMJ photovoltaics. MJ solar cells achieve higher efficiencies

Fong, David Michael

2012-01-01T23:59:59.000Z

288

Narrow energy band gap gallium arsenide nitride semi-conductors and an ion-cut-synthesis method for producing the same  

DOE Patents [OSTI]

A method for forming a semi-conductor material is provided that comprises forming a donor substrate constructed of GaAs, providing a receiver substrate, implanting nitrogen into the donor substrate to form an implanted layer comprising GaAs and nitrogen. The implanted layer is bonded to the receiver substrate and annealed to form GaAsN and nitrogen micro-blisters in the implanted layer. The micro-blisters allow the implanted layer to be cleaved from the donor substrate.

Weng, Xiaojun; Goldman, Rachel S.

2006-06-06T23:59:59.000Z

289

Synthesis of Germanium-Gallium-Tellurium (Ge-Ga-Te) ceramics by ball-milling and sintering Mathieu Hubert, Elena Petracovschi, Xiang-Hua Zhang and Laurent Calvez*  

E-Print Network [OSTI]

, the semiconductor behavior of CdTe is exploited for the production of solar panels [1, 2], the rapid and reversibleSe3 [21, 22] glasses show a controllable crystallization behavior, enabling the production of glass

Paris-Sud XI, Université de

290

PHYSICAL REVIEW A 82, 043806 (2010) Photon self-induced spin-to-orbital conversion in a terbium-gallium-garnet crystal  

E-Print Network [OSTI]

`a di Napoli "Federico II", Complesso Universitario di Monte S. Angelo, 80126 Napoli, Italy 2 INFN Sezione di Napoli, Complesso Universitario di Monte S. Angelo, 80126 Napoli, Italy 3 EGO, European Gravitational Observatory, Via E. Amaldi, 56021 S. Stefano a Macerata, Cascina (PI), Italy 4 CNISM

Marrucci, Lorenzo

291

Formation of Porous Layers by Electrochemical Etching of Germanium and Gallium Arsenide for Cleave Engineered Layer Transfer (CELT) Application in High Efficiency Multi-Junction Solar Cells  

E-Print Network [OSTI]

III! V Multijunction Solar Cells,” (2003). J. F. Geisz, etEfficiency Multi-Junction Solar Cells A thesis submitted inEfficiency Multi-Junction Solar Cells By David Michael Fong

Fong, David Michael

2012-01-01T23:59:59.000Z

292

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination  

E-Print Network [OSTI]

of the display industry as it moves from liquid crystal to organic light emitting diode technology and with requirements for larger areas and higher resolutions. A number of alternative material systems to a-Si:H have emerged, including organic semiconductors...

Flewitt, Andrew J.; Powell, M.J.

2014-01-01T23:59:59.000Z

293

Gallium arsenide-based ternary compounds and multi-band-gap solar cell research. Annual subcontract report, 15 April 1988--14 June 1990  

SciTech Connect (OSTI)

Aim of this contract is the achievement of a high-efficiency, low-cost solar cell. The basic approach to the problem is centered upon the heteroepitaxial growth of a III-V compound material onto a single-crystal silicon wafer. The growth technique employed is metalorganic chemical vapor deposition. The silicon wafer may serve as a mechanical substrate and ohmic contact for a single-junction device, or may contain a p-n junction of its own and form the bottom cell of a two junction tandem solar cell structure. The III-V material for the single-junction case is GaAs and for the two-junction case is either GaAlAs or GaAsP, either material having the proper composition to yield a band gap of approximately 1.7 eV. Results achieved in this contract include the following: (1) a 17.6% efficient GaAs-on-Si solar cell; (2) an 18.5% efficient GaAs-on-Si concentrator solar cell at 400 suns; (3) a 24.8% efficient GaAs-on-GaAs solar cell; (4) a 28.7% efficient GaAs-on-GaAs concentrator solar cell at 200 suns; (5) measurement of the effects of dislocation density and emitter doping on GaAs cells; and (6) improvements in the growth process to achieve reproducible thin AlGaAs window layers with low recombination velocities and environmental stability.

Vernon, S. [Spire Corp., Bedford, MA (United States)

1993-02-01T23:59:59.000Z

294

Gallium arsenide-based ternary compounds and multi-band-gap solar cell research. Final subcontract report, 1 April 1988--31 March 1990  

SciTech Connect (OSTI)

This report describes work to achieve a high-efficiency, low-cost solar cell. The basic approach to the problem is centered upon the heteroepitaxial growth of a III-V compound material onto a single-crystal silicon wafer. The growth technique employed throughout this work is metal-organic chemical vapor deposition. The silicon wafer may serve as a mechanical substrate and ohmic contact for a single-junction device, or it may contain a p-n junction of its own and form the bottom cell of a two-junction tandem solar cell structure. The III-V material for the single-junction case is GaAs, and for the two-junction case it is either GaAlAs or GaAsP, either material having the proper composition to yield a band gap of approximately 1.7 eV. Results achieved in this contract include (1) a 17.6%-efficient GaAs-on-Si solar cell; (2) an 18.5%-efficient GaAs-on-Si concentrator solar cell at 400 suns; (3) a 24.8%-efficient GaAs-on-GaAs solar cell; (4) a 28.7%-efficient GaAs-on-GaAs concentrator solar cell at 200 suns; (5) the measurement of the effects of dislocation density and emitter doping on GaAs cells; and (6) improvements in the growth process to achieve reproducible thin AlGaAs window layers with low recombination velocities and environmental stability.

Vernon, S. [Spire Corp., Bedford, MA (United States)

1993-07-01T23:59:59.000Z

295

Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes  

SciTech Connect (OSTI)

We demonstrate a metalorganic chemical vapor deposition growth approach for inverting N-polar to Ga-polar GaN by using a thin inversion layer grown with high Mg flux. The introduction of this inversion layer allowed us to grow p-GaN films on N-polar GaN thin film. We have studied the dependence of hole concentration, surface morphology, and degree of polarity inversion for the inverted Ga-polar surface on the thickness of the inversion layer. We then use this approach to grow a light emitting diode structure which has the MQW active region grown on the advantageous N-polar surface and the p-layer grown on the inverted Ga-polar surface.

Hosalli, A. M.; Van Den Broeck, D. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)

2013-12-02T23:59:59.000Z

296

IIl-nitride nanowires and heterostructures : growth and optical properties on nanoscale  

E-Print Network [OSTI]

Gallium nitride (GaN) and indium gallium nitride (InGaN) nanowires promise potential for further improving the electricity-to-light energy conversion efficiencies in light emitting diodes due to strain relaxation, reduced ...

Zhou, Xiang, Ph. D. Massachusetts Institute of Technology

2014-01-01T23:59:59.000Z

297

Phonon and thermal properties of exfoliated TaSe2 thin films T. R. Pope,2  

E-Print Network [OSTI]

Phonon and thermal properties of exfoliated TaSe2 thin films Z. Yan,1 C. Jiang,1 T. R. Pope,2 C. F diselenide (2H-TaSe2) obtained via the "graphene-like" mechanical exfoliation of crystals grown by chemical films exfoliated from TaSe2 and other metal dichalcogenides, as well as for evaluating self

298

2009 Minerals Yearbook U.S. Department of the Interior  

E-Print Network [OSTI]

As and gallium nitride (GaN) and was used in integrated circuits (ICs) and optoelectronic devices [laser diodes

299

2011 Minerals Yearbook U.S. Department of the Interior  

E-Print Network [OSTI]

Cs) and optoelectronic devices [laser diodes, light-emitting diodes (lEDs), photodetectors, and solar cells]. Gallium

300

Research on polycrystalline thin-film CuGaInSe{sub 2} solar cells. Annual subcontract report, 3 May 1991--2 May 1992  

SciTech Connect (OSTI)

This report describes research to fabricate high-efficiency CdZnS/CuInGaSe{sub 2} (CIGS) thin-film solar cells, and to develop improved transparent conductor window layers such as ZnO. A specific technical milestone was the demonstration of an air mass (AM) 1.5 global, 13% efficient, 1-cm{sup 2}-total-area CIGS thin-film solar cell. Our activities focused on three areas. First, a CIGS deposition: system was modified to double its substrate capacity, thus increasing throughput, which is critical to speeding the process development by providing multiple substrates from the same CIGS run. Second, new tooling was developed to enable an investigation of a modified aqueous CdZnS process. The goal was to improve the yield of this critical step in the device fabrication process. Third, our ZnO sputtering system was upgraded to improve its reliability, and the sputtering parameters were further optimized to improve its properties as a transparent conducting oxide. The characterization of the new CIGS deposition system substrate fixturing was completed, and we produced good thermal uniformity and adequately high temperatures for device-quality CIGS deposition. Both the CIGS and ZnO deposition processes were refined to yield a ZnO//Cd{sub 0.82}Zn{sub 0.18}S/CuIn{sub 0.80}Ga{sub 0.20}Se{sub 2} cell that was verified at NREL under standard testing conditions at 13.1% efficiency with V{sub oc} = 0.581 V, J{sub sc} = 34.8 mA/cm{sup 2}, FF = 0.728, and a cell area of 0.979 cm{sup 2}.

Stanbery, B.J.; Chen, W.S.; Devaney, W.E.; Stewart, J.W. [Boeing Co., Seattle, WA (United States). Defense and Space Systems Group

1992-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Recent technological advances in thin film solar cells  

SciTech Connect (OSTI)

High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

Ullal, H.S.; Zwelbel, K.; Surek, T.

1990-03-01T23:59:59.000Z

302

In situ chemical sensing in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor deposition process for real-time  

E-Print Network [OSTI]

; accepted 14 June 2005; published 18 July 2005 Gallium nitride and its alloys promise to be key materials.1116/1.1993616 I. INTRODUCTION In recent years, gallium-nitride GaN - and aluminum- gallium-nitride AlGaN -based are grown at high temperatures e.g., up to 1100 °C using large concentrations of H2 carrier and NH3 N source

Rubloff, Gary W.

303

E-Print Network 3.0 - arsenide oxides sr2cro3feas Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Microstructures of gallium nitride nanowires synthesized by oxide-assisted method W.S. Shi, Y... synthesized using the recently developed oxide-assisted method by laser...

304

Photonic crystal light emitting diode.  

E-Print Network [OSTI]

?? This master's thesis describe electromagnetic simulations of a gallium antimonide (GaSb) light emitting diode, LED. A problem for such devices is that most of… (more)

Leirset, Erlend

2010-01-01T23:59:59.000Z

305

E-Print Network 3.0 - americium arsenides Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Summary: of gallium arsenide, a semiconductor, which is used in advanced optoelectronics, lasers, microwave circuits... , and solar cells. To determine material...

306

E-Print Network 3.0 - adaptive nitride-based coatings Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

DELAUSANNE Summary: AND ELECTRONICS PROF. N. GRANDJEAN 33 III-NITRIDE BASED OPTOELECTRONIC DEVICES 34 GALLIUM NITRIDE-BASED 2D... FOR DIVERSE APPLICATIONS 84 HOLE ARRAY...

307

2012 Solid-State Lighting Manufacturing R&D Workshop Presentations...  

Broader source: Energy.gov (indexed) [DOE]

Frank Cerio, Veeco Instruments Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices Vivek Agrawal, Applied Materials Driving Down HB-LED Costs:...

308

The role of screening of the electron-phonon interaction in relaxation of photoexcited electron-hole plasma in semiconductors  

SciTech Connect (OSTI)

The role of screening of the interaction of the electron-hole plasma with optical phonons is analytically evaluated by the example of gallium arsenide.

Kumekov, S. E. [Kazakh National Technical University (Kazakhstan)], E-mail: skumekov@mail.ru

2008-08-15T23:59:59.000Z

309

E-Print Network 3.0 - anisotropy physics Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

physics Search Powered by Explorit Topic List Advanced Search Sample search results for: anisotropy physics Page: << < 1 2 3 4 5 > >> 1 Gallium crystallization: implication for the...

310

STATEMENT OF CONSIDERATIONS REQUEST BY CREE, INC. FOR AN ADVANCED...  

Broader source: Energy.gov (indexed) [DOE]

in the design and.manufacture of commercial semiconductor products utilizing silicon carbide and gallium nitride technologies. Cree states it is the owner or licensee to over 500...

311

STATEMENT OF CONSIDERATIONS REQUEST BY CREE, INC. FOR AN ADVANCED...  

Broader source: Energy.gov (indexed) [DOE]

in the design and manufacture of commercial semiconductor products utilizing silicon carbide and gallium nitride technologies. In addition Cree has more than 300 domestic patents...

312

High Temperature, High Voltage Fully Integrated Gate Driver Circuit  

Broader source: Energy.gov (indexed) [DOE]

temperature gate drive is being developed for use with future wide band gap (silicon carbide and gallium nitride) switching devices. * Universal drive that is capable of driving...

313

J O U R N A L O F C H E M I S T R Y  

E-Print Network [OSTI]

interactions in inhibiting the efficient widescale commercial utilization of polymeric electro for polymeric electro-optic modulators; however, in with devices fabricated from lithium niobate and gallium

Walba, David

314

Atomistic Study of the Melting Behavior of Single Crystalline...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and 110-oriented lateral facets, respectively. Citation: Wang Z, X Zu, F Gao, and WJ Weber.2007."Atomistic Study of the Melting Behavior of Single Crystalline Wurtzite Gallium...

315

THERMODYNAMICS OF SOLID AND LIQUID GROUP III-V ALLOYS  

E-Print Network [OSTI]

a high temperature heat capacity for liquid gallium which isthe molar heat capacity of the stoichiometric liquid and theheat capacity of the supercooled stoichiometric binary liquid

Anderson, T.J.

2011-01-01T23:59:59.000Z

316

E-Print Network 3.0 - aluminum alloys grain Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

aluminum... -lithium and aluminum-gallium has been studied. In ... Source: DOE Office of Energy Efficiency and Renewable Energy, Hydrogen, Fuel Cells and Infrastructure...

317

Tailored Ceramics for Laser Applications /  

E-Print Network [OSTI]

diffusion kinetics of rare-earth elements in YAG. . . .values for rare- earth elements in YAG. . . . . . . . . .6] D. J. Cherniak, “Rare earth element and gallium diffusion

Hollingsworth, Joel Philip

2013-01-01T23:59:59.000Z

318

Performance testing and Bayesian Reliability Analysis of small diameter, high power electric heaters for the simulation of nuclear fuel rod temperatures.  

E-Print Network [OSTI]

??The conversion of plutonium from a nuclear weapon to nuclear reactor fuel requires an evaluation of the residual gallium as a potential corrosive material within… (more)

O'Kelly, David Sean

2012-01-01T23:59:59.000Z

319

Energy Storage Systems 2010 Update Conference Presentations ...  

Broader source: Energy.gov (indexed) [DOE]

- Bulk Gallium Nitride Substrates - Karen Waldrip, SNL.pdf More Documents & Publications Energy Storage & Power Electronics 2008 Peer Review - Power Electronics (PE) Systems...

320

Sandia National Laboratories: Sandia Develops a Synthesis of...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Materials Science, News, News & Events, Office of Science, Research & Capabilities, Solid-State Lighting White light-emitting diodes (LEDs) based on blue indium-gallium-nitride...

Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

aircraft exhaust plumes: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ocean before descending to the core. We report results of laboratory experiments-forming metals. Single gallium drop experiments and experiments on Rayleigh-Taylor instabilities...

322

aircraft plume model: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ocean before descending to the core. We report results of laboratory experiments-forming metals. Single gallium drop experiments and experiments on Rayleigh-Taylor instabilities...

323

ablation plume propagation: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ocean before descending to the core. We report results of laboratory experiments-forming metals. Single gallium drop experiments and experiments on Rayleigh-Taylor instabilities...

324

ablation plume expansion: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ocean before descending to the core. We report results of laboratory experiments-forming metals. Single gallium drop experiments and experiments on Rayleigh-Taylor instabilities...

325

ablation plume thermalization: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ocean before descending to the core. We report results of laboratory experiments-forming metals. Single gallium drop experiments and experiments on Rayleigh-Taylor instabilities...

326

ablation plume dynamics: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ocean before descending to the core. We report results of laboratory experiments-forming metals. Single gallium drop experiments and experiments on Rayleigh-Taylor instabilities...

327

Diamonds are an Electronic Device's Best Friend | Department...  

Broader source: Energy.gov (indexed) [DOE]

way to combine diamond films with two other materials important for advanced devices, graphene and gallium nitride. Graphene is a rising star of the materials science world, with...

328

Categorical Exclusion Determination Form  

Broader source: Energy.gov (indexed) [DOE]

of SubMIC components, including the proprietary PolyStrata micro-coaxial transformer, Gallium Nitride integrated circuits, and Complementary Metal-Oxide Semiconductors,...

329

Alta Devices Develops World Record Setting Thin-Film Solar Cell  

Office of Energy Efficiency and Renewable Energy (EERE)

EERE supported the development of Alta Devices' thin film Gallium Arsenide photovoltaic technology that set a world record for conversion efficiency.

330

Solar Energy Materials & Solar Cells 88 (2005) 6573 Investigation of pulsed non-melt laser annealing  

E-Print Network [OSTI]

Solar Energy Materials & Solar Cells 88 (2005) 65­73 Investigation of pulsed non-melt laser annealing on the film properties and performance of Cu(In,Ga)Se2 solar cells Xuege Wanga , Sheng S. Lia,�, C time to modify near- surface defects and related junction properties in Cu(In,Ga)Se2 (CIGS) solar cells

Anderson, Timothy J.

331

The Center for integrative genomics  

E-Print Network [OSTI]

The Center for integrative genomics Report 2005­2006 #12;Presentation Director's message 4 Scientific advisory committee 6 Organigram of the CIG 7 research The structure and function of genomes and their evolution alexandrereymond ­ Genome structure and expression 10 henrikKaessmann ­ Evolutionary genomics 12

Kaessmann, Henrik

332

Thse prsente pour obtenir le grade de DOCTEUR DE L'COLE POLYTECHNIQUE  

E-Print Network [OSTI]

for solar cells 5 2.1 Photovoltaic solar cells . . . . . . . . . . . . . . . . . . . . . . 6 2.1.1 History initio Calculations of the Electronic Properties of CuIn(S,Se)2 and other Materials for Photovoltaic and technology . . . . . . . . . . . . . . . . . . 6 2.1.2 CIGS solar cell

Paris-Sud XI, Université de

333

Toward microscale Cu,,In,Ga...Se2 solar cells for efficient conversion and optimized material usage: Theoretical evaluation  

E-Print Network [OSTI]

solar cells are gaining a growing market share in the photovoltaic field. CIGS thin film solar cells. In this paper, the behavior of microscale thin film solar cells under concen- tration will be studied. We focusToward microscale Cu,,In,Ga...Se2 solar cells for efficient conversion and optimized material usage

Boyer, Edmond

334

Simulation of Polycrystalline Cu(In,Ga)Se2 Solar Cells in Two Dimensions Markus Gloeckler, Wyatt K. Metzger1  

E-Print Network [OSTI]

that a plausible reason behind highly efficient thin-film CIGS solar cells ( > 17%) is an inherent valenceSimulation of Polycrystalline Cu(In,Ga)Se2 Solar Cells in Two Dimensions Markus Gloeckler, Wyatt K) solar cells and its effects on solar-cell performance. The simulations predict that (1) for device

Sites, James R.

335

The Effects of Non-Uniform Electronic Properties on Thin Film Photovoltaics  

E-Print Network [OSTI]

Photovoltaics     There  are  two  requirements  for  designing  a  high  efficiency  photovoltaics.    These   modeling  efforts  are  important  not  only  for  future  efficiency  photovoltaics,  typically  made  with  CIGS  and  CdTe   absorber  layers,  are  promising  sources  of  renewable  energy  due  to  their  high   efficiencies  (

Brown, Gregory Ferguson

2011-01-01T23:59:59.000Z

336

2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim7020 www.advmat.de  

E-Print Network [OSTI]

generation high efficiency photovoltaic architectures, such as photovoltaics with up-converting absorbers[4 conventional inorganic photovoltaic, such as silicon or CuInxGa(1-x)Se2 (CIGS), to form a higher efficiency for Third Generation Photovoltaics Zach M. Beiley, M. Greyson Christoforo, Paul Gratia, Andrea R. Bowring

McGehee, Michael

337

2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 1 www.advmat.de  

E-Print Network [OSTI]

generation high efficiency photovoltaic architectures, such as photovoltaics with up-converting absorbers[4 conventional inorganic photovoltaic, such as silicon or CuInxGa(1-x)Se2 (CIGS), to form a higher efficiency for Third Generation Photovoltaics Zach M. Beiley, M. Greyson Christoforo, Paul Gratia, Andrea R. Bowring

McGehee, Michael

338

Mechanics of Jointed and Faulted Rock, Rossmanith (ed) 0 1995 Balkema, Rotterdam. ISBN 90 54 10 54 7 0 Seismic properties of a general fracture  

E-Print Network [OSTI]

7 0 Seismic properties of a general fracture E. Liu British Geological Survey Edinburgh, UK J Inc., Ponca Cig Okla., USA ABSTRACT: In modelling the wave behaviour through fractured and jointed rocks, different models have been proposed to describe the fractures. A fracture can be modelled (1

Edinburgh, University of

339

Mat. Res. Soc. Symp. Proc. Vol. 668 @ 2001 Materials Research Society Influence of proton irradiation and development of flexible CdTe solar cells on polyimide  

E-Print Network [OSTI]

power (defined as the ratio of output electrical power to the solar module weight). Thin film solar cells on polymer films can yield more than 2- kW/kg specific power. CIGS solar cells of about 10 to 12 irradiation and development of flexible CdTe solar cells on polyimide A. Romeo, D.L. Bätzner, H. Zogg and A

Romeo, Alessandro

340

Hydrogen, Fuel Cells, and Infrastructure Technologies FY 2002 Progress Report AAS Atomic Adsorption Spectroscopy  

E-Print Network [OSTI]

Gas Integrated Storage System CH4 Methane CIDI Compressed Ignition Direct Injection CIGS Copper/Si Aluminosilicate Al2O3 Aluminum Oxides AMS Accelerator Mass Spectrometry ANL Argonne National Laboratory APCI Air a Oxygenase CARB California Air Resources Board CCD Charge-Coupled Device CCM Catalyst Coated Membrane CEM

Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Hydrogen, Fuel Cells, and Infrastructure Technologies FY 2003 Progress Report Acronyms and Abbreviations  

E-Print Network [OSTI]

Hydrogen Gas CH2-ISS Compressed Hydrogen Gas Integrated Storage System CH4 Methane Chl Chlorophyll CIGS&D Compression, Storage and Dispensing CSMP Cabot Superior Micropowders CST Compact Stuart Technology Cu Copper-millionth of a centimeter) A/C Air Conditioner ABET Accreditation Board for Engineering and Technology AC Alternating

342

Building Integrated Photovoltaics: New trends and Challenges'  

E-Print Network [OSTI]

AR coating p-type Si Monocrystalline Silicon solar cell Polycrystalline wafer solar cells #12;· Thin crystalline silicon (mono & multi) Dye cell and organic thin film: a-Si, CdTe, CIGS new concepts the optical absorption in thin a-Si layers, texturing of TCO and reflecting mirror are applied Amorphous

Painter, Kevin

343

Transport, Interfaces, and Modeling in Amorphous Silicon Based Solar Cells: Final Technical Report, 11 February 2002 - 30 September 2006  

SciTech Connect (OSTI)

Results for a-Si characteristics/modeling; photocarrier drift mobilities in a-Si;H, ..mu..c-Si:H, CIGS; hole-conducting polymers as p-layer for a-Si and c-Si; IR spectra of p/i and n/i interfaces in a-Si.

Schiff, E. A.

2008-10-01T23:59:59.000Z

344

"ECS Transactions -Boston, MA" Volume 16, "Photovoltaics for the 21st Century 7" to be published in September, 2011  

E-Print Network [OSTI]

"ECS Transactions - Boston, MA" Volume 16, "Photovoltaics for the 21st Century 7" to be published Ã?/600 Ã? /200 Ã?. The CIGS film with homogeneous and dense surface morphology with large grain size temperature from 99.99% pure source. Figure 1(a) shows the schematic of the E-beam evaporation system used

Dagenais, Mario

345

Degradation of transparent conductive oxides; Mechanistic insights across configurations and exposures  

E-Print Network [OSTI]

. An encapsulated configuration study was conducted on ITO and AZO, exposing samples to the above accel- erated applications, durability concerns arise. The cost and reliability of solar power are often cited as a primary been reported in thin film silicon solar modules123 , CIGS modules456 and OPV technologies78910

Rollins, Andrew M.

346

(Data in metric tons unless otherwise noted) Domestic Production and Use: Indium was not recovered from ores in the United States in 2007. Indium-containing  

E-Print Network [OSTI]

of solar power. Research was underway to develop a low-cost manufacturing process for flexible CIGS solar collection of scrap to fabrication of secondary indium products. A recycler may have millions of dollars%. Mainstream LCD devices were also trending toward larger panel sizes, which require more indium per unit

347

Boron Doped diamond films as electron donors in photovoltaics: An X-ray absorption and hard X-ray photoemission study  

SciTech Connect (OSTI)

Highly boron-doped diamond films are investigated for their potential as transparent electron donors in solar cells. Specifically, the valence band offset between a diamond film (as electron donor) and Cu(In,Ga)Se{sub 2} (CIGS) as light absorber is determined by a combination of soft X-ray absorption spectroscopy and hard X-ray photoelectron spectroscopy, which is more depth-penetrating than standard soft X-ray photoelectron spectroscopy. In addition, a theoretical analysis of the valence band is performed, based on GW quasiparticle band calculations. The valence band offset is found to be small: VBO?=?VBM{sub CIGS} – VBM{sub diamond}?=?0.3?eV?±?0.1?eV at the CIGS/Diamond interface and 0.0?eV?±?0.1?eV from CIGS to bulk diamond. These results provide a promising starting point for optimizing the band offset by choosing absorber materials with a slightly lower valence band maximum.

Kapilashrami, M.; Zegkinoglou, I. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Physics, University of Wisconsin Madison, Madison, Wisconsin 53706 (United States); Conti, G.; Nemšák, S.; Conlon, C. S.; Fadley, C. S. [Department of Physics, University of California, Davis, California 95616 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Törndahl, T.; Fjällström, V. [Ångström Solar Center, Uppsala University, Box 534, SE-751 21 Uppsala (Sweden); Lischner, J. [Department of Physics, University of California, Berkeley, California 94720 (United States); Louie, Steven G. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Physics, University of California, Berkeley, California 94720 (United States); Hamers, R. J.; Zhang, L. [Department of Chemistry, University of Wisconsin Madison, Madison, Wisconsin 53706 (United States); Guo, J.-H. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Himpsel, F. J., E-mail: fhimpsel@wisc.edu [Department of Physics, University of Wisconsin Madison, Madison, Wisconsin 53706 (United States)

2014-10-14T23:59:59.000Z

348

COMPARISON OF TRAP STATES BETWEEN CIGSS/CdS/ZnO AND Cd PE CIGSS/ZnO CELLS P.K. Johnson, A.O. Pudov, J.R. Sites  

E-Print Network [OSTI]

cost. The best photovoltaic junctions are produced when a thin CdS layer is deposited by chemical commercial photovoltaic modules. We use current-voltage, quantum efficiency, capacitance Defects - 3 1. INTRODUCTION Polycrystalline CIGS thin film photovoltaic cells are known for their high

Sites, James R.

349

When you think of the film industry, what comes to mind? Entertainment. In this issue you will discover how films not only bring us the latest adventures but also are being sculptured at  

E-Print Network [OSTI]

.S. patents. He is a recipient of three Sports Emmy® Awards for Outstanding Technical Team Achievement. 2009 technology. Kraus is focusing on optimization of this layer and process control for high volume CIGS Dr. Christine Masters, Bogniak took an active role in two engineering mechanics classes - Statics

Demirel, Melik C.

350

CX-010895: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Development and Industrialization of Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Light Emitting Diodes LEDs on Patterned Sapphire Substrate (PSS) for Low Cost Emitter Architecture CX(s) Applied: B3.6 Date: 06/27/2013 Location(s): California Offices(s): National Energy Technology Laboratory

351

innovati nNREL Scientists Spurred the Success of Multijunction Solar Cells  

E-Print Network [OSTI]

innovati nNREL Scientists Spurred the Success of Multijunction Solar Cells Before 1984, many a solar cell can convert into electricity. Olson thought the focus should change to finding materials-winning gallium indium phosphide/gallium arsenide tandem solar cell, which had achieved record efficiencies, con

352

TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron  

E-Print Network [OSTI]

neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

353

This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. IEEE JOURNAL OF PHOTOVOLTAICS 1  

E-Print Network [OSTI]

as presented, with the exception of pagination. IEEE JOURNAL OF PHOTOVOLTAICS 1 Gallium Arsenide Solar Cell--Gallium arsenide, nanospheres, photovoltaic systems, whispering gallery modes (WGMs). I. INTRODUCTION THE route as the active layer is thinned [2]. Thin-film photovoltaics offer the possibility to significantly reduce

Atwater, Harry

354

Induced Optical Losses in Optoelectronic Devices due to Focused Ion Beam Damages  

E-Print Network [OSTI]

A study of damages caused by gallium focused ion beam (FIB) into III-V compounds is presented. Potential damages caused by local heating, ion implantation, and selective sputtering are presented. Preliminary analysis shows that local heating is negligible. Gallium implantation is shown to occur over areas tens of nanometers thick. Gallium accumulation as well as selective sputtering during III-V compounds milling is expected. Particularly, for GaAs, this effect leads to gallium segregation and formation of metallic clusters. Microdisk resonators were fabricated using FIB milling with different emission currents to analyze these effects on a device. It is shown that for higher emission current, thus higher implantation doses, the cavity quality factor rapidly decreases due to optical scattering losses induced by implanted gallium atoms.

Vallini, Felipe; Reis, Elohim Fonseca dos; von Zuben, Antônio Augusto; Frateschi, Newton Cesário

2012-01-01T23:59:59.000Z

355

Investigations of CuInSe sub 2 thin films and contacts  

SciTech Connect (OSTI)

This report describes research into electrical contacts for copper indium diselenide (CuInSe{sub 2}) polycrystalline thin films used for solar cell applications. Molybdenum contacts have historically been the most promising for heterojunction solar cells. This program studied contact stability by investigating thermally induced bilayer reactions between molybdenum and copper, indium, and selenium. Because selenization is widely used to fabricate CuInSe{sub 2} thin films for photovoltaic cells, a second part of the program investigated how the morphologies, phases, and reactions of pre-selenization Cu-In structures are affected by the deposition process and heat treatments. 7 refs., 6 figs.

Nicolet, M.A. (California Inst. of Tech., Pasadena, CA (United States))

1991-10-01T23:59:59.000Z

356

Inverse-Micelle-Encapsulated Water-Enabled Bond Breaking ofDialkyl  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFunInfrared LandResponses to EngineeredADepartmentDiselenide/Disulfide: A

357

Investigating Commercial Cellulase Performances Toward Specific Biomass  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFunInfrared LandResponses to EngineeredADepartmentDiselenide/Disulfide:

358

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect (OSTI)

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

359

ULTRA BARRIER TOPSHEET (UBT) FOR FLEXIBLE PHOTOVOLTAICS  

SciTech Connect (OSTI)

This slideshow presents work intended to: Scale-up the Generation -1 UBT to 1+meter width full-scale manufacturing; Develop a Generation-2 UBT on the pilot line, targeting improved performance, longer lifetime and lower cost; Transfer Generation-2 UBT from the pilot line to the full-scale manufacturing line in 2014; and Validate service life of Generation-1 UBT for the 25+ year lifetime. 3M has scaled up UBT for production at 1.2 meter width. 3M is conducting extensive lifetime studies including: –Evaluation of customer processing and installation conditions; –Indoor accelerated testing of UBT film and full CIGS modules; –Outdoor testing of UBT film and CIGS modules. Results have been used to improve ultra barrier film performance for flex module applications.

Schubert, Charlene

2013-01-09T23:59:59.000Z

360

Performance and Loss Analyses of High-Efficiency CBD-ZnS/Cu(In1-xGax)Se2 Thin-Film Solar Cells  

E-Print Network [OSTI]

1 Performance and Loss Analyses of High-Efficiency CBD-ZnS/Cu(In1-xGax)Se2 Thin-Film Solar Cells, Setagaya-ku, Tokyo 157-8572, Japan (Received ) KEYWORDS: ZnS buffer, Cu(In,Ga)Se2, thin-film solar cells alternative to CdS in polycrystalline thin-film Cu(In1-xGax)Se2 (CIGS) solar cells. Cells with efficiency

Sites, James R.

Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Joint Development of Coated Conductor and Low Cost Thin Film Solar Cells: Cooperative Research and Development Final Report, CRADA Number CRD-007-213  

SciTech Connect (OSTI)

UES plans on developing CIGS thin films by using Metal Organic Deposition (MOD) technique as it is a low-cost, non-vacuum method for scale-up to large area PV modules. NREL will support UES, Inc. through expert processing, characterization and device fabrication. NREL scientists will also help develop a processing phase diagram which includes composition, film thickness, annealing temperature and ambient conditions. Routine measurements of devices and materials will be done under NREL's core support project.

Bhattacharya, R.

2011-02-01T23:59:59.000Z

362

Safe Operating Procedure SAFETY PROTOCOL: URANIUM  

E-Print Network [OSTI]

involve the use of natural or depleted uranium. Natural isotopes of uranium are U-238, U-235 and U-234 (see Table 1 for natural abundances). Depleted uranium contains less of the isotopes: U-235 and U-234. The specific activity of depleted uranium (5.0E-7 Ci/g) is less than that of natural uranium (7.1E-7 Ci

Farritor, Shane

363

ZnS/Zn(O,OH)S-based buffer layer deposition for solar cells  

DOE Patents [OSTI]

The invention provides CBD ZnS/Zn(O,OH)S and spray deposited ZnS/Zn(O,OH)S buffer layers prepared from a solution of zinc salt, thiourea and ammonium hydroxide dissolved in a non-aqueous/aqueous solvent mixture or in 100% non-aqueous solvent. Non-aqueous solvents useful in the invention include methanol, isopropanol and triethyl-amine. One-step deposition procedures are described for CIS, CIGS and other solar cell devices.

Bhattacharya, Raghu N. (Littleton, CO)

2009-11-03T23:59:59.000Z

364

EECE 577 Assignment 2 Due date: October 20, at the beginning of class.  

E-Print Network [OSTI]

investigated for use in low-cost, thin-film solar cells (see, for example, Nanosolar's web-site). CIGS can be p on the course web-site in the file Spectrum.txt. The wavelength is in column 1 and the irradiance is in column 3. Perform a calculation of the dark current for the cell, justifying the equations and para- meter values

Pulfrey, David L.

365

Spray Deposition of High Quality CuInSe2 and CdTe Films: Preprint  

SciTech Connect (OSTI)

A number of different ink and deposition approaches have been used for the deposition of CuInSe2 (CIS), Cu(In,Ga)Se2 (CIGS), and CdTe films. For CIS and CIGS, soluble precursors containing Cu, In, and Ga have been developed and used in two ways to produce CIS films. In the first, In-containing precursor films were sprayed on Mo-coated glass substrates and converted by rapid thermal processing (RTP) to In2Se3. Then a Cu-containing film was sprayed down on top of the In2Se3 and the stacked films were again thermally processed to give CIS. In the second approach, the Cu-, In-, and Ga-containing inks were combined in the proper ratio to produce a mixed Cu-In-Ga ink that was sprayed on substrates and thermally processed to give CIGS films directly. For CdTe deposition, ink consisting of CdTe nanoparticles dispersed in methanol was prepared and used to spray precursor films. Annealing these precursor films in the presence of CdCl2 produced large-grained CdTe films. The films were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). Optimized spray and processing conditions are crucial to obtain dense, crystalline films.

Curtis, C. J.; van Hest, M.; Miedaner, A.; Leisch, J.; Hersh, P.; Nekuda, J.; Ginley, D. S.

2008-05-01T23:59:59.000Z

366

Applied Materials Develops an Advanced Epitaxial Growth System to Bring Down LED Costs  

Broader source: Energy.gov [DOE]

With the help of DOE funding, Applied Materials has developed an advanced epitaxial growth system for gallium nitride (GaN) LED devices that decreases operating costs, increases internal quantum efficiency, and improves binning yields.

367

A compact transport and charge model for GaN-based high electron mobility transistors for RF applications  

E-Print Network [OSTI]

Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are rapidly emerging as front-runners in high-power mm-wave circuit applications. For circuit design with current devices and to allow sensible future ...

Radhakrishna, Ujwal

2013-01-01T23:59:59.000Z

368

2338 IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 30, NO. 4, APRIL 2015 Optically Switched-Drive-Based Unified Independent  

E-Print Network [OSTI]

as well. Index Terms--Active gate drive, di/dt, dv/dt, electromagnetic interference (EMI), gallium. However, this leads to higher di/dt and dv/dt, which in turn, causes higher electromagnetic interference

Mazumder, Sudip K.

369

A-15 Superconducting composite wires and a method for making  

DOE Patents [OSTI]

A method for fabricating superconducting wires wherein a billet of copper containing filaments of niobium or vanadium is rolled to form a strip which is wrapped about a tin-alloy core to form a composite. The alloy is a tin-copper alloy for niobium filaments and a gallium-copper alloy for vanadium filaments. The composite is then drawn down to a desired wire size and heat treated. During the heat treatment process, the tin in the bronze reacts with the niobium to form the superconductor niobium tin. In the case where vanadium is used, the gallium in the gallium bronze reacts with the vanadium to form the superconductor vanadium gallium. This new process eliminates the costly annealing steps, external tin plating and drilling of bronze ingots required in a number of prior art processes.

Suenaga, Masaki (Bellport, NY); Klamut, Carl J. (East Patchogue, NY); Luhman, Thomas S. (Westhampton Beach, NY)

1984-01-01T23:59:59.000Z

370

Wrapping process for fabrication of A-15 superconducting composite wires  

DOE Patents [OSTI]

A method for fabricating superconducting wires wherein a billet of copper containing filaments of niobium or vanadium is rolled to form a strip which is wrapped about a tin-alloy core to form a composite. The alloy is a tin-copper alloy for niobium filaments and a gallium-copper alloy for vanadium filaments. The composite is then drawn down to a desired wire size and heat treated. During the heat treatment process, the tin in the bronze reacts with the niobium to form the superconductor niobium tin. In the case where vanadium is used, the gallium in the gallium bronze reacts with the vanadium to form the superconductor vanadium gallium. This new process eliminates the costly annealing steps, external tin plating and drilling of bronze ingots required in a number of prior art processes.

Suenaga, M.; Klamut, C.J.; Luhman, T.S.

1980-08-15T23:59:59.000Z

371

U.S. GEOLOGICAL SURVEY--MINERALS INFORMATION 1 By Deborah A. Kramer  

E-Print Network [OSTI]

). to produce optoelectronic devices and integrated circuits for Increased demand for GaAs resulted in several U. Consumption Optoelectronic devices continued to be the largest end use for gallium, with 59% of total

372

Calendar | OSTI, US Dept of Energy, Office of Scientific and...  

Office of Scientific and Technical Information (OSTI)

Application Center 2014-10-16 13:32 Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices 2014-10-16 13:32 CHEMICAL ANALYSIS OF SIMULATED HIGH LEVEL WASTE...

373

2H NMR | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

NMR Leads No leads are available at this time. Local environment and composition of magnesium gallium layered double hydroxides determined from solid-state 1H and 71Ga NMR...

374

EMSL - 2H NMR  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

tags2h-nmr en Local environment and composition of magnesium gallium layered double hydroxides determined from solid-state 1H and 71Ga NMR http:www.emsl.pnl.govemslweb...

375

EMSL - In situ catalysis  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

situ-catalysis en Local environment and composition of magnesium gallium layered double hydroxides determined from solid-state 1H and 71Ga NMR http:www.emsl.pnl.govemslweb...

376

In situ catalysis | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Leads No leads are available at this time. Local environment and composition of magnesium gallium layered double hydroxides determined from solid-state 1H and 71Ga NMR...

377

CX-004937: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Transphorm, Inc. -High Performance Gallium Nitride High Electron Mobility Transistor Modules for Agile Power ElectronicsCX(s) Applied: B3.6Date: 08/05/2010Location(s): CaliforniaOffice(s): Advanced Research Projects Agency - Energy

378

Device-level thermal analysis of GaN-based electronics  

E-Print Network [OSTI]

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

Bagnall, Kevin Robert

2013-01-01T23:59:59.000Z

379

E-Print Network 3.0 - antimony pyrochlore-type oxides Sample...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Source," Rev. Sci. Instrum. 50, 84 (1979). See also... . Wright, S. and Kroemer, H., "Reduction of Oxides on Silicon by Heating in a Gallium Molecular Beam at 800... .' Bean, J....

380

Association between oxygen vacancies and trivalent dopants in crystalline and amorphous ZnO  

E-Print Network [OSTI]

Density functional theory calculations are used to investigate the structure and binding energies of clusters formed between oxygen vacancies and trivalent dopant atoms (indium, gallium and aluminium) substituted into zinc oxide. Our results show...

Muñoz Ramo, D.; Chroneos, A.; Rushton, M. J. D.; Bristowe, P .D.

2014-03-31T23:59:59.000Z

Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

MOCVD growth of In GaP-based heterostructures for light emitting devices  

E-Print Network [OSTI]

In this work, we examine fundamental materials processes in the growth of indium gallium phosphide (InGaP) via metalorganic chemical vapor deposition (MOCVD). In particular, we realize improvements in the epitaxial integration ...

McGill, Lisa Megan, 1975-

2004-01-01T23:59:59.000Z

382

CX-010873: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Ammonothermal Bulk Gallium Nitride Crystal Growth for Energy Efficient Lightning and Power Electronics CX(s) Applied: B3.6 Date: 05/22/2013 Location(s): California Offices(s): Advanced Research Projects Agency-Energy

383

OBSERVATOIRE DE GRENOBLE LABORATOIRE DE GEOPHYSIQUE INTERNE ET TECTONOPHYSIQUE  

E-Print Network [OSTI]

source d'´energie la plus probable de la g´eodynamo, qui entretient le champ magn´etique de la plan´elisation de l'´ecou- lement convectif sans champ d'un m´etal liquide (le gallium), `a grand for¸cage thermique, and aims at modelling the non-magnetic convective flow of a spherical shell of liquid metal (gallium

Boyer, Edmond

384

Metal organic chemical vapor deposition of 111-v compounds on silicon  

DOE Patents [OSTI]

Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

Vernon, Stanley M. (Wellesley, MA)

1986-01-01T23:59:59.000Z

385

Determination of Grain Boundary Charging in Cu(In,Ga)Se2 Thin Films: Preprint  

SciTech Connect (OSTI)

Surface potential mapping of Cu(In,Ga)Se2 (CIGS) thin films using scanning Kelvin probe force microscopy (SKPFM) aims to understand the minority-carrier recombination at the grain boundaries (GBs) of this polycrystalline material by examining GB charging, which has resulted in a number of publications. However, the reported results are highly inconsistent. In this paper, we report on the potential mapping by measuring wide-bandgap or high-Ga-content films and by using a complementary atomic force microscopy-based electrical technique of scanning capacitance microscopy (SCM). The results demonstrate consistent, positively charged GBs on our high-quality films with minimal surface defects/charges. The potential image taken on a low-quality film with a 1.2-eV bandgap shows significantly degraded potential contrast on the GBs and degraded potential uniformity on grain surfaces, resulting from the surface defects/charges of the low-quality film. In contrast, the potential image on an improved high-quality film with the same wide bandgap shows significantly improved GB potential contrast and surface potential uniformity, indicating that the effect of surface defects is critical when examining GB charging using surface potential data. In addition, we discuss the effect of the SKPFM setup on the validity of potential measurement, to exclude possible artifacts due to improper SKPFM setups. The SKPFM results were corroborated by using SCM measurements on the films with a CdS buffer layer. The SCM image shows clear GB contrast, indicating different electrical impedance on the GB from the grain surface. Further, we found that the GB contrast disappeared when the CdS window layer was deposited after the CIGS film was exposed extensively to ambient, which was caused by the creation of CIGS surface defects by the ambient exposure.

Jiang, C. S.; Contreras, M. A.; Repins, I.; Moutinho, H. R.; Noufi, R.; Al-Jassim, M. M.

2012-06-01T23:59:59.000Z

386

InAs quantum wire induced composition modulation in an In{sub 0.53}Ga{sub 0.37}Al{sub 0.10}As barrier layer grown on an InP substrate  

SciTech Connect (OSTI)

Composition modulations are observed by transmission electron microscopy in In{sub 0.53}Ga{sub 0.37}Al{sub 0.10}As barrier layers that overgrow both single- and multilayer InAs quantum wire structures grown on an InP substrate. Indium-rich (gallium-deficient) regions were observed in the region of the barrier layer lying directly above individual quantum wires, while indium-deficient (gallium-rich) regions were detected in the barrier above the gaps between adjacent underlying quantum wires. The magnitude of such modulation was typically 7% (atomic percent) for both indium and gallium as estimated from the energy dispersive x-ray analysis. The origin of such composition modulations was determined by modeling the chemical potential distribution for indium and gallium on the growth front of the barrier layer at the initial capping stage of the quantum wires with finite element simulations. It is found that the number and positions of the indium-rich regions are determined by the combined effects of strain and surface energy distributions on the barrier material capping the quantum wires. Moreover the estimated magnitudes of the composition modulation for both indium and gallium from the finite element models are in good agreement with the experimental observations. This method provides a simple way to understand the origin of, and to estimate the magnitude of the quantum wire-induced composition modulation in the barrier layer.

Cui, K. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Robinson, B. J. [Center for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Thompson, D. A. [Center for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Botton, G. A. [Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L7 (Canada); Center for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

2010-08-15T23:59:59.000Z

387

Preliminary materials assessment for the Satellite Power System (SPS)  

SciTech Connect (OSTI)

Presently, there are two SPS reference design concepts (one using silicon solar cells; the other using gallium arsenide solar cells). A materials assessment of both systems was performed based on the materials lists set forth in the DOE/NASA SPS Reference System Report: Concept Development and Evaluation Program. This listing identified 22 materials (plus miscellaneous and organics) used in the SPS. Tracing the production processes for these 22 materials, a total demand for over 20 different bulk materials (copper, silicon, sulfuric acid, etc.) and nealy 30 raw materials (copper ore, sand, sulfur ore, etc.) was revealed. Assessment of these SPS material requirements produced a number of potential material supply problems. The more serious problems are those associated with the solar cell materials (gallium, gallium arsenide, sapphire, and solar grade silicon), and the graphite fiber required for the satellite structure and space construction facilities. In general, the gallium arsenide SPS option exhibits more serious problems than the silicon option, possibly because gallium arsenide technology is not as well developed as that for silicon. Results are presented and discussed in detail. (WHK)

Teeter, R.R.; Jamieson, W.M.

1980-01-01T23:59:59.000Z

388

Group III-nitride thin films grown using MBE and bismuth  

DOE Patents [OSTI]

The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

Kisielowski, Christian K. (Peidmont, CA); Rubin, Michael (Berkeley, CA)

2000-01-01T23:59:59.000Z

389

Group III-nitride thin films grown using MBE and bismuth  

DOE Patents [OSTI]

The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

Kisielowski, Christian K. (Piedmont, CA); Rubin, Michael (Berkeley, CA)

2002-01-01T23:59:59.000Z

390

Metastable Changes to the Temperature Coefficients of Thin-Film Photovoltaic Modules  

SciTech Connect (OSTI)

Transient changes in the performance of thin-film modules with light exposure are a well-known and widely reported phenomenon. These changes are often the result of reversible metastabilities rather than irreversible changes. Here we consider how these metastable changes affect the temperature dependence of photovoltaic performance. We find that in CIGS modules exhibiting a metastable increase in performance with light exposure, the light exposure also induces an increase in the magnitude of the temperature coefficient. It is important to understand such changes when characterizing temperature coefficients and when analyzing the outdoor performance of newly installed modules.

Deceglie, M. G.; Silverman, T. J.; Marion, B.; Kurtz, S. R.

2014-07-01T23:59:59.000Z

391

Identification and Analysis of Distinct Features in Imaging Thin-Film Solar Cells: Preprint  

SciTech Connect (OSTI)

Electroluminescence and photoluminescence (EL and PL) are two imaging techniques employed at NREL that are used to qualitatively evaluate solar cells. In this work, imaging lab-scale CdTe and CIGS devices provides information about small-area PV response, which will aid in determining the effects of non-uniformities on cell performance. EL, PL, and dark lock-in thermography signatures are first catalogued. Their responses to varying conditions are then studied. Further analysis includes acquiring spectral data, making microscopy measurements, and correlating luminescence to device performance. The goal of this work is to quantitatively determine non-uniformity effects on cell performance using rapid imaging techniques.

Zaunbrecher, K. N.; Johnston, S. W.; Sites, J. R.

2012-06-01T23:59:59.000Z

392

Sandia National Laboratories: thin-film battery  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1developmentturbineredox-activeNational SolartSSLPV materials (Si CIGS CdTe)

393

Sandia National Laboratories: thin-film growth  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1developmentturbineredox-activeNational SolartSSLPV materials (Si CIGS CdTe)growth

394

Sandia National Laboratories: thin-film technology  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1developmentturbineredox-activeNational SolartSSLPV materials (Si CIGS

395

Aquatic chemistry of selenium: evidence of biomethylation  

SciTech Connect (OSTI)

The chemical species of dissolved selenium were examined in surface waters from three sites in the San Joaquin and Imperial Valleys of California. Six dissolved selenium species were identified: the inorganic species selenate and selenite; nonvolatile organic selenides, including seleno amino acids and a dimethylselenonium ion; and the volatile methylated forms dimethyl selenide and dimethyl diselenide. The occurrences of methylated selenium species in the aquatic environment has important implications regarding the biogeochemical behavior of selenium in natural aqueous systems. Laboratory studies indicate that the nonvolatile dimethylselenonium ion can be transformed into volatile dimethyl selenide at neutral pH, providing a pathway for the in situ production of dimethyl selenide in natural waters. Geochemical flux calculations indicate that outgassing of dimethyl selenide may be an important removal mechanism for dissolved selenium from aqueous systems. 22 references, 7 figures, 1 table.

Cooke, T.D.; Bruland, K.W.

1987-12-01T23:59:59.000Z

396

Rapid, non-destructive evaluation of ultrathin WSe{sub 2} using spectroscopic ellipsometry  

SciTech Connect (OSTI)

The utilization of tungsten diselenide (WSe{sub 2}) in electronic and optoelectronic devices depends on the ability to understand and control the process-property relationship during synthesis. We demonstrate that spectroscopic ellipsometry is an excellent technique for accurate, non-destructive determination of ultra-thin (<30 nm) WSe{sub 2} properties. The refractive index (n) and extinction coefficient (k) were found to be independent of thickness down to 1.3 nm, and were used to determine film thickness, which was confirmed to be within 9% of values found via atomic force microscopy. Finally, the optical bandgap was found to closely correlate with thickness, ranging from 1.2 to 1.55 eV as the WSe{sub 2} is thinned to the equivalent of 2 atomic layers.

Eichfeld, Sarah M.; Lin, Yu-Chuan; Hossain, Lorraine [Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Eichfeld, Chad M. [Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Robinson, Joshua A., E-mail: jrobinson@psu.edu [Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-09-01T23:59:59.000Z

397

Polycrystalline thin-film solar cells and modules  

SciTech Connect (OSTI)

This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG&E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

1991-12-01T23:59:59.000Z

398

Polycrystalline thin-film solar cells and modules  

SciTech Connect (OSTI)

This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

1991-12-01T23:59:59.000Z

399

The MSW solution to the solar neutrino problem for non-standard solar models  

E-Print Network [OSTI]

The difficulties for non-standard solar models (NSSM) in resolving the solar neutrino problem are discussed stressing the incompatibility of the gallium--Kamiokande data, and of the gallium--chlorine data. We conclude that NSSM's cannot explain simultaneously the results of any two of the solar neutrino data (chlorine, Kamiokande and gallium). We address further the question whether the MSW solution exists for NSSM's (e.g. models with $^8$B neutrino flux much lower than the standard one and/or central temperature $T_c$ very different from $T_c^{\\text{SSM}}$). We demonstrate that the MSW solution exists and is very stable relative to changes of $S_{17}$ ($S$-factor for $p$ + $^7$Be reaction) and $T_c$. In particular, $\\Delta m^2$ is almost constant while $\\sin^2 2\\theta$ depends on the exact values of $S_{17}$ (or $^8$B-neutrino flux) and $T_c$.

V. Berezinsky; G. Fiorentini; M. Lissia

1994-08-17T23:59:59.000Z

400

High efficiency radioisotope thermophotovoltaic prototype generator  

SciTech Connect (OSTI)

A radioisotope thermophotovoltaic generator space power system (RTPV) is lightweight, low-cost alternative to the present radioisotope thermoelectric generator system (RTG). The fabrication of such an RTPV generator has recently become feasible as the result of the invention of the GaSb infrared sensitive photovoltaic cell. Herein, the authors present the results of a parametric study of emitters and optical filters in conjuction with existing data on gallium antimonide cells. They compare a polished tungsten emitter with an Erbia selective emitter for use in combination with a simple dielectric filter and a gallium antimonide cell array. They find that the polished tungsten emitter is by itself a very selective emitter with low emissivity beyond 4 microns. Given a gallium antimonide cell and a tungsten emitter, a simple dielectric filter can be designed to transmit radiant energy below 1.7 microns and to reflect radiant energy between 1.7 and 4 microns back to the emitter. Because of the low long wavelength emissivity associated with the polished tungsten emitter, this simple dielectric filter then yields very respectable system performance. Also as a result of the longer wavelength fall-off in the tungsten emissivity curve, the radiation energy peak for a polished tungsten emitter operating at 1300 K shifts to shorter wavelengths relative to the blackbody spectrum so that the radiated energy peak falls right at the gallium antimonide cell bandedge. The result is that the response of the gallium antimonide cell is well matched to a polished tungsten emitter. The authors propose, therefore, to fabricate an operating prototype of a near term radioisotope thermophotovoltaic generator design consisting of a polished tungsten emitter, standard gallium antimonide cells, and a near-term dielectric filter.

Avery, J.E.; Samaras, J.E.; Fraas, L.M.; Ewell, R. [JX Crystals, Inc., Issaquah, WA (United States)

1995-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect (OSTI)

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

402

Low dimensional GaAs/air vertical microcavity lasers  

SciTech Connect (OSTI)

We report on the fabrication of gallium arsenide (GaAs)/air distributed Bragg reflector microresonators with indium gallium arsenide quantum wells. The structures are studied via momentum resolved photoluminescence spectroscopy which allows us to investigate a pronounced optical mode quantization of the photonic dispersion. We can extract a length parameter from these quantized states whose upper limit can be connected to the lateral physical extension of the microcavity via analytical calculations. Laser emission from our microcavity under optical pumping is observed in power dependent investigations.

Gessler, J.; Steinl, T.; Fischer, J.; Höfling, S.; Schneider, C.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg (Germany); Mika, A.; S?k, G.; Misiewicz, J. [Institute of Physics, Wroclaw University of Technology, Wybrze?e Wyspia?skiego 27, 50-370 Wroc?aw (Poland)

2014-02-24T23:59:59.000Z

403

Understanding of Defect Physics in Polycrystalline Photovoltaic Materials: Preprint  

SciTech Connect (OSTI)

The performance of thin-film solar cells is influenced by the quality of interfaces and formation of defects such as point defects, stacking faults, twins, dislocations, and grain boundaries. It is important to understand the defect physics so that appropriate methods may be developed to suppress the formation of harmful defects. Here, we review our understanding of defect physics in thin-film photovoltaic (PV) materials such as Si, CdTe, Cu(In,Ga)Se2 (CIGS), Cu2ZnSnSe2 (CZTSe), and Cu2ZnSnS2 (CZTS) using the combination of nanoscale electron microscopy characterization and density-functional theory (DFT). Although these thin-film PV materials share the same basic structural feature - diamond structure based - the defect physics in them could be very different. Some defects, such as stacking faults and special twins, have similar electronic properties in these thin-film materials. However, some other defects, such as grain boundaries and interfaces, have very different electronic properties in these materials. For example, grain boundaries produce harmful deep levels in Si and CdTe, but they do not produce significant deep levels in CIGS, CZTSe, and CZTS. These explain why passivation is critical for Si and CdTe solar cells, but is less important in CIS and CZTS solar cells. We further provide understanding of the effects of interfaces on the performance of solar cells made of these PV materials.

Yan, Y.

2011-07-01T23:59:59.000Z

404

Thickness Effect of Al-Doped ZnO Window Layer on Damp Heat Stability of CuInGaSe2 Solar Cells: Preprint  

SciTech Connect (OSTI)

We investigated the damp heat (DH) stability of CuInGaSe2 (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 ?m to a modest 0.50 ?m over an underlying 0.10-?m intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 ?m/3 ?m) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85oC and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

2011-07-01T23:59:59.000Z

405

Influence of Damp Heat on the Electrical, Optical, and Morphological Properties of Encapsulated CuInGaSe2 Devices: Preprint  

SciTech Connect (OSTI)

CuInGaSe2 (CIGS) devices, encapsulated with different backsheets having different water vapor transmission rates (WVTR), were exposed to damp heat (DH) at 85C and 85% relative humidity (RH) and characterized periodically to understand junction degradation induced by moisture ingress. Performance degradation of the devices was primarily driven by an increase in series resistance within first 50 h of exposure, resulting in a decrease in fill factor and, accompanied loss in carrier concentration and widening of depletion width. Surface analysis of the devices after 700-h DH exposure showed the formation of Zn(OH)2 from hydrolysis of the Al-doped ZnO (AZO) window layer by the moisture, which was detrimental to the collection of minority carriers. Minority carrier lifetimes observed for the CIGS devices using time resolved photoluminescence (TRPL) remained relatively long after DH exposure. By etching the DH-exposed devices and re-fabricating with new component layers, the performance of reworked devices improved significantly, further indicating that DH-induced degradation of the AZO layer and/or the CdS buffer was the primary performance-degrading factor.

Sundaramoorthy, R.; Pern, F. J.; Teeter, G.; Li, J. V.; Young, M.; Kuciauskas, D.; Call, N.; Yan, F.; To, B.; Johnston, S.; Noufi, R.; Gessert, T. A.

2011-08-01T23:59:59.000Z

406

Dynamics of Ion Beam Stimulated Surface Mass Transport to Nanopores David P. Hoogerheide1  

E-Print Network [OSTI]

Dynamics of Ion Beam Stimulated Surface Mass Transport to Nanopores David P. Hoogerheide1 membrane, from the substrate side, by rastering a 10-nm diameter, 50 keV gallium ion beam produced by a FEI We explore the ion beam-induced dynamics of the formation of large features at the edges of nanopores

407

Photo: D. Stevenson and C. Conway/Beckman Institute/University of Illinois An inorganic LED display printed on a flexible substrate bends without breaking  

E-Print Network [OSTI]

by the Ford Motor Co., which envisions many possible automotive applications for thin, flexible lighting this atop a layer of aluminum arsenide which itself coated a gallium arsenide substrate. Using a combination, such displays would be almost completely transparent--and well suited for another automotive need: inexpensive

Rogers, John A.

408

MSW Implications of Solar Neutrino Experiments  

E-Print Network [OSTI]

I discuss the implications for future solar neutrino experiments of the most recent gallium data in the context of the MSW mechanism. At the low energy end of the solar neutrino spectrum we need to measure the $^7$Be component directly; and at the high energy end, we need precise measurements of the shape of the spectrum.

S. P. Rosen

1992-10-01T23:59:59.000Z

409

Synthesis and use of (perfluoroaryl) fluoro-aluminate anion  

DOE Patents [OSTI]

A trityl perfluorophenyl alumninate such as tris(2,2',2"-nonafluorobiphenyl)-fluoroaluminate (PBA.sup..crclbar.) and its role as a cocatalyst in metallocene-mediated olefin polymerization is disclosed. Gallium and indium analogs are also disclosed, as are analogs with different anyl groups or different numbers of flourine atoms thereon.

Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

2001-01-01T23:59:59.000Z

410

EURODISPLAY 2002 631 P-64: A Comparative Study of Metal Oxide Coated Indium-tin Oxide Anodes  

E-Print Network [OSTI]

EURODISPLAY 2002 631 P-64: A Comparative Study of Metal Oxide Coated Indium-tin Oxide Anodes and Technology Clear Water Bay, Kowloon, Hong Kong Abstract Indium-tin oxide anodes capped with certain oxides-emitting diodes (OLEDs). The oxides of tin, zinc, praseodymium, yttrium, gallium, terbium and titanium have been

411

Fluidic patch antenna based on liquid metal alloy/single-wall carbon-nanotubes operating at the S-band frequency  

E-Print Network [OSTI]

Fluidic patch antenna based on liquid metal alloy/single-wall carbon-nanotubes operating at the S (eutectic gallium indium) blended with single-wall carbon-nanotube (SWNTs). The nanocomposite­24 For instance, Cheng et al.15 and So and coworkers14 reported an unbalanced loop antenna and a half- wave dipole

412

Studies of local and intermediate range structure in crystalline and amorphouse materials at high pressure using high-energy x-rays.  

SciTech Connect (OSTI)

The method of high-energy total elastic X-ray scattering to determine the atomic structure of nanocrystalline, highly disordered, and amorphous materials is presented. The current state of the technique, its potential, and limitations are discussed with two successful studies on the pressure induced phase transition in mackinawite (FeS) and the high-pressure behavior of liquid gallium.

Ehm, L.; Antao, M.; Chen, J.; Locke, D. R.; Michel, F. M.; Martin, C. D.; Yu, T.; Lee, P. L.; Chupas, P. J.; Shastri, S. D.; Guo, Q.; Parise, J. B.; Stony Brook Univ.; BNL

2007-06-01T23:59:59.000Z

413

Studies of Local and Intermediate Range Structure in Crystalline and Amorphous Materials at High Pressure Using High-Energy X-rays  

SciTech Connect (OSTI)

The method of high-energy total elastic X-ray scattering to determine the atomic structure of nanocrystalline, highly disordered, and amorphous materials is presented. The current state of the technique, its potential, and limitations are discussed with two successful studies on the pressure induced phase transition in mackinawite (FeS) and the high-pressure behavior of liquid gallium.

Ehm,L.; Antao, S.; Chen, J.; Locke, D.; Michel, F.; Martin, D.; Yu, T.; Parise, J.; Lee, P.; et al.

2007-01-01T23:59:59.000Z

414

Ab initio cluster calculations of hydrogenated GaAs,,001... surfaces Chemical Engineering Department, University of California, Los Angeles, California 90095-1592  

E-Print Network [OSTI]

Ab initio cluster calculations of hydrogenated GaAs,,001... surfaces Q. Fu Chemical Engineering Engineering Department, University of California, Los Angeles, California 90095-1592 Received 11 November 1999 Hydrogen adsorption on the 2 4 and 4 2 reconstructions of gallium arsenide 001 has been studied by internal

Li, Lian

415

Top-gate thin-film transistors based on GaN channel layer Rongsheng Chen, Wei Zhou, and Hoi Sing Kwok  

E-Print Network [OSTI]

liquid gallium target. The GaN TFTs exhibit good electrical performance such as field effect mobility of 1 cm2 /Vs, threshold voltage of Ã?0.4 V, on/off current ratio of 105 , and subthreshold swing of 0 electrical sta- bility of ZnO-based TFTs is still a main issue preventing from commercialization.9 Bottom

416

You are here: Home / News / 3D view of 1D nanostructures More services  

E-Print Network [OSTI]

create tool to put the lid on solar power fluctuations Variability law for solar panels News 3D view of 1 recently reported that individual gallium nitride nanowires show strong piezoelectricity ­ a type of charge. To obtain the measurements, researchers applied an electric field in different directions in single nanowire

Espinosa, Horacio D.

417

Characterization and Modeling of Silicon Carbide Power Devices and Paralleling Operation  

E-Print Network [OSTI]

Characterization and Modeling of Silicon Carbide Power Devices and Paralleling Operation Yutian Cui silicon carbide (SiC) power devices. The devices have been tested for both static and dynamic like silicon carbide (SiC) and gallium nitride (GaN) are becoming more attractive. SiC power devices

Tolbert, Leon M.

418

Hydrogen, Fuel Cells, and Infrastructure Technologies FY 2002 Progress Report Section VI. Safety and Codes & Standards  

E-Print Network [OSTI]

to H2 from 0-100% at 450o C in N2 background Future Directions · Fabricate 2nd generation sensors.A Safety VI.A.1 Gallium Nitride Integrated Gas/Temperature Sensors for Fuel Cell System Monitoring catalytic gate field effect transistor (FET) sensors to resolve and detect carbon monoxide (CO

419

Design Constraints for Liquid-Protected Divertors S. Shin, S. I. Abdel-Khalik  

E-Print Network [OSTI]

, and particle surface interactions to establish the operating windows for candidate liquids [4]. Lithium, Flibe for lithium, Flibe, lithium- lead, tin, and gallium are presented. The generalized charts developed. INTRODUCTION Work on liquid-surface-protected plasma facing components, and plasma surface interactions, has

California at San Diego, University of

420

CONF-881031--66 DE89 007397  

E-Print Network [OSTI]

liquid-metals are evaluated, i.e., lithium, gallium, andtin. A wide range of reactor operating conditions-1O9-Eng-38. cope up with a large heat loads it must also withstand severe surface erosion during both normal and off-normal operating conditions. Under most conditions the major mechanism of erosion during

Harilal, S. S.

Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Differential radioactivity monitor for non-invasive detection of ocular melanoma  

DOE Patents [OSTI]

There is described an apparatus and method for diagnosing ocular cancer that is both non-invasive and accurate which comprises two radiation detectors positioned before each of the patient's eyes which will measure the radiation level produced in each eye after the administration of a tumor-localizing radiopharmaceutical such as gallium-67.

Lambrecht, R.M.; Packer, S.

1982-09-23T23:59:59.000Z

422

Method for non-invasive detection of ocular melanoma  

DOE Patents [OSTI]

An apparatus and method is disclosed for diagnosing ocular cancer that is both non-invasive and accurate. The apparatus comprises two radiation detectors positioned before each of the patient's eyes which will measure the radiation level produced in each eye after the administration of a tumor-localizing radiopharmaceutical such as gallium-67. 2 figs.

Lambrecht, R.M.; Packer, S.

1984-10-30T23:59:59.000Z

423

GaAs Nanowire Array Solar Cells with Axial p-i-n Junctions Maoqing Yao, Ningfeng Huang, Sen Cong, Chun-Yung Chi, M. Ashkan Seyedi, Yen-Ting Lin, Yu Cao,  

E-Print Network [OSTI]

for future low-cost, high-efficiency photovoltaics. KEYWORDS: Nanowires, solar cells, gallium arsenide, axial.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity

Zhou, Chongwu

424

Aluminum battery alloys  

DOE Patents [OSTI]

Aluminum alloys suitable for use as anode structures in electrochemical cells are disclosed. These alloys include iron levels higher than previously felt possible, due to the presence of controlled amounts of manganese, with possible additions of magnesium and controlled amounts of gallium.

Thompson, D.S.; Scott, D.H.

1984-09-28T23:59:59.000Z

425

Matter & Energy Solar Energy  

E-Print Network [OSTI]

See Also: Matter & Energy Solar Energy· Electronics· Materials Science· Earth & Climate Energy and the Environment · Renewable Energy· Environmental Science · Reference Chemical compound· Semiconductor· Gallium at the University of Illinois, the future of solar energy just got brighter. Although silicon is the industry

Rogers, John A.

426

Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates  

E-Print Network [OSTI]

, 37831, E-mail: xiaok@ornl.gov 4 Nanosystem Research Institute, National Institute of Advanced Industrial Information The GaS laminar precursor was obtained by the following method: The method uses a two-zone horizontal furnace with a fused silica tube, into which the sulfur powder and gallium were placed in the low

Geohegan, David B.

427

Method of forming particulate materials for thin-film solar cells  

DOE Patents [OSTI]

A method for preparing particulate materials useful in fabricating thin-film solar cells is disclosed. Particulate materials is prepared by the method include for example materials comprising copper and indium and/or gallium in the form of single-phase, mixed-metal oxide particulates; multi-phase, mixed-metal particulates comprising a metal oxide; and multinary metal particulates.

Eberspacher, Chris; Pauls, Karen Lea

2004-11-23T23:59:59.000Z

428

Friday, May 21, 2010 High-Performance Electronics without the High Price  

E-Print Network [OSTI]

materials. Researchers have used the method to make high-performance image sensors, transistors, and solar exotic semiconductors brings down the cost of high- performance solar cells and microchips. By Katherine Bourzac Compared to silicon, semiconductors like gallium arsenide can be made into solar cells

Rogers, John A.

429

Aluminum battery alloys  

DOE Patents [OSTI]

Aluminum alloys suitable for use as anode structures in electrochemical cs are disclosed. These alloys include iron levels higher than previously felt possible, due to the presence of controlled amounts of manganese, with possible additions of magnesium and controlled amounts of gallium.

Thompson, David S. (Richmond, VA); Scott, Darwin H. (Mechanicsville, VA)

1985-01-01T23:59:59.000Z

430

Minerals Use in Safety Applications in the Workplace Many of the applications described below are found in and around the U.S. Geological Survey  

E-Print Network [OSTI]

communications equipment, including computers and cell phones, as well as in gallium-based solar cells that power that provide power to emergency lighting fixtures and backup power to medical equipment. #12;2 Cement. Copper--Copper wiring provides power for emergency lighting systems and power and signal transmission

Torgersen, Christian

431

IEEE ELECTRON DEVICE LETTERS, VOL. 24, NO. 4, APRIL 2003 227 RF MEMS Switches Fabricated on  

E-Print Network [OSTI]

with superior performance over con- ventional semiconductor devices [4]­[7]. Typically, RF MEMS switches-resistivity silicon wafers, gallium arsenide (GaAs) wafers, and quartz substrates using semiconductor Manuscript and surface planarization of wide metal lines prior to deposition of a metal membrane bridge, which poses

Cetiner, Bedri A.

432

PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS Prog. Photovolt: Res. Appl. 2006; 14:2543  

E-Print Network [OSTI]

PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS Prog. Photovolt: Res. Appl. 2006; 14 Solar Energy, Inc., 5575 S. Houghton Rd, Tucson, AZ 85747, USA 7 Energy Photovoltaics, Inc., 276 Bakers transport within copper indium gallium sulfoselenide (CIGSS) photovoltaic devices, whose absorber layers

Anderson, Timothy J.

433

Metal articles having ultrafine particles dispersed therein  

SciTech Connect (OSTI)

This patent describes a metal article of manufacture. It comprises: a metal selected from the group consisting of copper, silver, gold, lead, tin, nickel, zinc, cobalt, antimony, bismuth, iron, cadmium, chromium, germanium, gallium, selenium, tellurium, mercury, tungsten arsenic, manganese, iridium, indium, ruthenium, rhenium, rhodium, molybdenum, palladium, osmium and platinum; and a plurality of ultrafine particles.

Alexander, G.B.; Nadkarni, R.A.

1992-07-28T23:59:59.000Z

434

Method for non-invasive detection of ocular melanoma  

DOE Patents [OSTI]

There is described an apparatus and method for diagnosing ocular cancer that is both non-invasive and accurate which comprises two radiation detectors positioned before each of the patient's eyes which will measure the radiation level produced in each eye after the administration of a tumor-localizing radiopharmaceutical such as gallium-67.

Lambrecht, Richard M. (Quogue, NY); Packer, Samuel (Floral Park, NY)

1984-01-01T23:59:59.000Z

435

Synthesis, Growth, and Properties of TlGa{sub 1-x}Yb{sub x}S{sub 2} Crystals  

SciTech Connect (OSTI)

The synthesis of TlGa{sub 1-x}Yb{sub x}S{sub 2} single crystals with the partial substitution of ytterbium for gallium is described. Variations in the electric conductivity of grown crystals irradiated with X-rays of various intensities are measured.

Kerimova, E.M.; Mustafaeva, S.N.; Asadov, Yu.G.; Kerimov, R.N. [Institute of Physics, National Academy of Sciences, pr. Dzhavida 33, Baku, 370143 (Azerbaijan)

2005-12-15T23:59:59.000Z

436

CX-010973: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory

437

CX-011468: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Advanced Low-Cost Silicon-Carbide (SiC) and Gallium-Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 10/29/2013 Location(s): Michigan Offices(s): National Energy Technology Laboratory

438

CX-010974: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory

439

256 NATURE PHYSICS | VOL 8 | APRIL 2012 | www.nature.com/naturephysics news & views  

E-Print Network [OSTI]

resonances, such as the vibrational modes of a suspended beam. Now, Martin Gustafsson and colleagues, writing-state equivalent of ripples on a pond. In piezoelectric materials (such as the gallium arsenide slab used in a radiofrequency- tank circuit, one obtains a so-called radiofrequency SET5 -- an extremely sensitive and fast

Loss, Daniel

440

CX-001137: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

Advanced Epi Tools for Gallium Nitride LED (Light Emitting Diode) DevicesCX(s) Applied: B3.6Date: 03/05/2010Location(s): Santa Clara, CaliforniaOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

National Renewable Energy Laboratory  

E-Print Network [OSTI]

Hydrogen-Production Technology Hydrogen offers great promise as a clean fuel in our nation's energy research and collaboration to improve the durability of photovoltaic cells for PEC hydrogen production-indium-phosphide/ gallium-arsenide) with an impressive 12.4% solar-to-hydrogen efficiency. Unfortunately, the tandem cell

442

CX-009000: Categorical Exclusion Determination  

Broader source: Energy.gov [DOE]

"High Quality, Low Cost Bulk Gallium Nitride (GaN) Substrates Grown by the Electrochemical Solution Growth Method CX(s) Applied: A9, B3.6 Date: 08/20/2012 Location(s): Missouri Offices(s): Golden Field Office"

443

Cantilever Epitaxy Process Wins R&D 100 Award  

Broader source: Energy.gov [DOE]

Sandia National Laboratories received an R&D 100 Award from R&D Magazine for development of a new process for growing gallium nitride on an etched sapphire substrate. The process, called cantilever epitaxy, promises to make brighter and more efficient green, blue, and white LEDs.

444

Recovery and purification of nickel-63 from HFIR-irradiated targets  

SciTech Connect (OSTI)

The production of large quantities of high-specific-activity {sup 63}Ni (>10 Ci/g) requires both a highly enriched {sup 62}Ni target and a long irradiation period at high neutron flux. Trace impurities in the nickel and associated target materials are also activated and account for a significant fraction of the discharged activity and essentially all of the gamma activity. While most of these undesirable activation products can be removed as chloride complexes during anion exchange, chromium, present at {sup 51}Cr, and scandium, present as {sup 46}Sc, are exceptions and require additional processing to achieve the desired purity. Optimized flowsheets are discussed based upon the current development and production experience.

Williams, D.F.; O`Kelley, G.D.; Knauer, J.B.; Porter, C.E.; Wiggins, J.T.

1993-06-01T23:59:59.000Z

445

Thin-Film Reliability Trends Toward Improved Stability: Preprint  

SciTech Connect (OSTI)

Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (Rd) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2+/-0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

Jordan, D. C.; Kurtz, S. R.

2011-07-01T23:59:59.000Z

446

Exploring High-Dimensional Data Space: Identifying Optimal Process Conditions in Photovoltaics: Preprint  

SciTech Connect (OSTI)

We demonstrate how advanced exploratory data analysis coupled to data-mining techniques can be used to scrutinize the high-dimensional data space of photovoltaics in the context of thin films of Al-doped ZnO (AZO), which are essential materials as a transparent conducting oxide (TCO) layer in CuInxGa1-xSe2 (CIGS) solar cells. AZO data space, wherein each sample is synthesized from a different process history and assessed with various characterizations, is transformed, reorganized, and visualized in order to extract optimal process conditions. The data-analysis methods used include parallel coordinates, diffusion maps, and hierarchical agglomerative clustering algorithms combined with diffusion map embedding.

Suh, C.; Glynn, S.; Scharf, J.; Contreras, M. A.; Noufi, R.; Jones, W. B.; Biagioni, D.

2011-07-01T23:59:59.000Z

447

Multiscale modeling of solar cells with interface phenomena  

E-Print Network [OSTI]

We describe a mathematical model for heterojunctions in semiconductors which can be used, e.g., for modeling higher efficiency solar cells. The continuum model involves well-known drift-diffusion equations posed away from the interface. These are coupled with interface conditions with a nonhomogeneous jump for the potential, and Robin-like interface conditions for carrier transport. The interface conditions arise from approximating the interface region by a lower-dimensional manifold. The data for the interface conditions are calculated by a Density Functional Theory (DFT) model over a few atomic layers comprising the interface region. We propose a domain decomposition method (DDM) approach to decouple the continuum model on subdomains which is implemented in every step of the Gummel iteration. We show results for CIGS/CdS, Si/ZnS, and Si/GaAs heterojunctions.

Foster, David H; Peszynska, Malgorzata; Schneider, Guenter

2013-01-01T23:59:59.000Z

448

Thin-Film Reliability Trends Toward Improved Stability  

SciTech Connect (OSTI)

Long-term, stable performance of photovoltaic (PV) modules will be increasingly important to their successful penetration of the power grid. This paper summarizes more than 150 thin-film and more than 1700 silicon PV degradation rates (R{sub d}) quoted in publications for locations worldwide. Partitioning the literature results by technology and date of installation statistical analysis shows an improvement in degradation rate especially for thin-film technologies in the last decade. A CIGS array deployed at NREL for more than 5 years that appears to be stable supports the literature trends. Indoor and outdoor data indicate undetectable change in performance (0.2 {+-} 0.2 %/yr). One module shows signs of slight degradation from what appears to be an initial manufacturing defect, however it has not affected the overall system performance.

Jordan, D. C.; Kurtz, S. R.

2011-01-01T23:59:59.000Z

449

E-Area Performance Assessment Interim Measures Assessment FY2005  

SciTech Connect (OSTI)

After major changes to the limits for various disposal units of the E-Area Low Level Waste Facility (ELLWF) last year, no major changes have been made during FY2005. A Special Analysis was completed which removes the air pathway {sup 14}C limit from the Intermediate Level Vault (ILV). This analysis will allow the disposal of reactor moderator deionizers which previously had no pathway to disposal. Several studies have also been completed providing groundwater transport input for future special analyses. During the past year, since Slit Trenches No.1 and No.2 were nearing volumetric capacity, they were operationally closed under a preliminary closure analysis. This analysis was performed using as-disposed conditions and data and showed that concrete rubble from the demolition of 232-F was acceptable for disposal in the STs even though the latest special analysis for the STs had reduced the tritium limits so that the inventory in the rubble exceeded limits. A number of special studies are planned during the next years; perhaps the largest of these will be revision of the Performance Assessment (PA) for the ELLWF. The revision will be accomplished by incorporating special analyses performed since the last PA revision as well as revising analyses to include new data. Projected impacts on disposal limits of more recent studies have been estimated. No interim measures will be applied during this year. However, it is being recommended that tritium disposals to the Components-in-Grout (CIG) Trenches be suspended until a limited Special Analysis (SA) currently in progress is completed. This SA will give recommendations for optimum placement of tritiated D-Area tower waste. Further recommendations for tritiated waste placement in the CIG Trenches will be given in the upcoming PA revision.

Stallings, M

2006-01-31T23:59:59.000Z

450

Surface and interfacial reaction study of half cycle atomic layer deposited HfO{sub 2} on chemically treated GaSb surfaces  

SciTech Connect (OSTI)

An in situ half-cycle atomic layer deposition/X-ray photoelectron spectroscopy (XPS) study was conducted in order to investigate the evolution of the HfO{sub 2} dielectric interface with GaSb(100) surfaces after sulfur passivation and HCl etching, designed to remove the native oxides. With the first pulses of tetrakis(dimethylamido)hafnium(IV) and water, a decrease in the concentration of antimony oxide states present on the HCl-etched surface is observed, while antimony sulfur states diminished below the XPS detection limit on sulfur passivated surface. An increase in the amount of gallium oxide/sulfide is seen, suggesting oxygen or sulfur transfers from antimony to gallium during antimony oxides/sulfides decomposition.

Zhernokletov, D. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Dong, H.; Brennan, B.; Kim, J. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Yakimov, M.; Tokranov, V.; Oktyabrsky, S. [College of Nanoscale Science and Engineering, University at Albany - SUNY, Albany, New York 12203 (United States)] [College of Nanoscale Science and Engineering, University at Albany - SUNY, Albany, New York 12203 (United States); Wallace, R. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States) [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

2013-04-01T23:59:59.000Z

451

Phase stable rare earth garnets  

DOE Patents [OSTI]

A transparent ceramic according to one embodiment includes a rare earth garnet comprising A.sub.hB.sub.iC.sub.jO.sub.12, where h is 3.+-.10%, i is 2.+-.10%, and j is 3.+-.10%. A includes a rare earth element or a mixture of rare earth elements, B includes at least one of aluminum, gallium and scandium, and C includes at least one of aluminum, gallium and scandium, where A is at a dodecahedral site of the garnet, B is at an octahedral site of the garnet, and C is at a tetrahedral site of the garnet. In one embodiment, the rare earth garment has scintillation properties. A radiation detector in one embodiment includes a transparent ceramic as described above and a photo detector optically coupled to the rare earth garnet.

Kuntz, Joshua D.; Cherepy, Nerine J.; Roberts, Jeffery J.; Payne, Stephen A.

2013-06-11T23:59:59.000Z

452

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect (OSTI)

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

453

Low Energy Solar Neutrinos and Spin Flavour Precession  

E-Print Network [OSTI]

The possibility that the Gallium data effectively indicates a time modulation of the solar active neutrino flux in possible connection to solar activity is examined on the light of spin flavour precession to sterile neutrinos as a subdominant process in addition to oscillations. We distinguish two sets of Gallium data, relating them to high and low solar activity. Such modulation affects principally the low energy neutrinos ($pp$ and $^7 Be$) so that the effect, if it exists, will become most clear in the forthcoming Borexino and LENS experiments and will provide evidence for a neutrino magnetic moment. Using a model previously developed, we perform two separate fits in relation to low and high activity periods to all solar neutrino data. These fits include the very recent charged current spectrum from the SNO experiment. We also derive the model predictions for Borexino and LENS experiments.

Bhag C. Chauhan; Joao Pulido; R. S. Raghavan

2005-07-03T23:59:59.000Z

454

Concerning the energy levels of silver in Ge-Si alloys  

SciTech Connect (OSTI)

The emission from impurity states of silver (an element of the IB subgroup) in a Ge-Si alloy, containing 18 at % Si, has been studied. The donor level of silver has been found in crystals doubly doped with gallium and silver, while its first acceptor level has been revealed in crystals doped with only silver. Single crystals were grown by pulling from a melt using a feeding rod. Doping with gallium was performed by introducing this element into the feeding rod, and silver was introduced into the crystals via diffusion. The positions of the donor and first acceptor Ag levels with respect to the top of the valence band were found by analyzing the temperature dependence of the Hall coefficient and the electroneutrality equation for the crystal: 0.06 and 0.29 eV, respectively.

Tahirov, V. I. [Baku State University (Azerbaijan); Agamaliev, Z. A. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan); Sadixova, S. R.; Guliev, A. F.; Gahramanov, N. F., E-mail: n_gakhramanov@mail.ru [Sumgait State University (Azerbaijan)

2012-03-15T23:59:59.000Z

455

US polycrystalline thin film solar cells program  

SciTech Connect (OSTI)

The Polycrystalline Thin Film Solar Cells Program, part of the United States National Photovoltaic Program, performs R D on copper indium diselenide and cadmium telluride thin films. The objective of the Program is to support research to develop cells and modules that meet the US Department of Energy's long-term goals by achieving high efficiencies (15%-20%), low-cost ($50/m{sup 2}), and long-time reliability (30 years). The importance of work in this area is due to the fact that the polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells and modules have made rapid advances. They have become the leading thin films for PV in terms of efficiency and stability. The US Department of Energy has increased its funding through an initiative through the Solar Energy Research Institute in CuInSe{sub 2} and CdTe with subcontracts to start in Spring 1990. 23 refs., 5 figs.

Ullal, H.S.; Zweibel, K.; Mitchell, R.L. (Solar Energy Research Inst., Golden, CO (USA)) [Solar Energy Research Inst., Golden, CO (USA)

1989-11-01T23:59:59.000Z

456

Reactivity studies of a pseudo three-coordinate vanadium(II) complex: Synthesis of terminal oxo and sulfido complexes of vanadium(IV) and S?S and Se?Se reductive bond cleavage reactions  

SciTech Connect (OSTI)

Terminal oxo and sulfido complexes in the form of (nacnac)V=E(Ntol{sub 2}) (nacnac = [ArNC(CH{sub 3})]{sub 2}CH{sup -}, Ar = 2,6-(CHMe{sub 2}){sub 2}C{sub 6}H{sub 3}, Ntol{sub 2} = {sup -}N(C{sub 6}H{sub 4}-4-Me), E = O (1), S (2)) were isolated from treatment of the masked three-coordinate vanadium(II) complex, (nacnac)V(Ntol{sub 2}), with C{sub 5}H{sub 5}NO and S{sub 8}, respectively. Both vanadium(IV) species, 1 and 2, have been characterized by room temperature X-band EPR spectroscopic studies, and in the case of complex 1, a single crystal molecular structure confirmed the presence of a terminal oxo moiety. Moreover, reaction of (nacnac)V(Ntol{sub 2}) with diphenyl-disulfide and diphenyl-diselenide results in the reductive cleavage of these compounds to produce the vanadium(III) complexes (nacnac)V(XPh)(Ntol{sub 2}) (X = S, (3), Se (4)). A molecular structure of the phenylsulfide complex, 3, confirmed formation of the d{sup 2} complex resulting from reductive cleavage of the S-S bond.

Tran, Ba L.; Chen, Chun-Hsing; Mindiola, Daniel J. (Indiana)

2012-02-07T23:59:59.000Z

457

Recycling of cadmium and selenium from photovoltaic modules and manufacturing wastes  

SciTech Connect (OSTI)

Since the development of the first silicon based photovoltaic cell in the 1950's, large advances have been made in photovoltaic material and processing options. At present there is growing interest in the commercial potential of cadmium telluride (CdTe) and copper indium diselenide (CIS) photovoltaic modules. As the commercial potential of these technologies becomes more apparent, interest in the environmental, health and safety issues associated with their production, use and disposal has also increased because of the continuing regulatory focus on cadmium and selenium. In future, recycling of spent or broken CdTe and CIS modules and manufacturing wastes may be needed for environmental, economic or political reasons. To assist industry to identify recycling options early in the commercialization process, a Workshop was convened. At this Workshop, representatives from the photovoltaic, electric utility, and nonferrous metals industries met to explore technical and institutional options for the recycling of spent CdTe and CIS modules and manufacturing wastes. This report summarizes the results of the Workshop. This report includes: (1) A discussion of the Resource Conservation and Recovery Act regulations and their potential implications to the photovoltaic industry; (2) an assessment of the needs of the photovoltaic industry from the perspective of module manufacturers and consumers; (3) an overview of recycling technologies now employed by other industries for similar types of materials; and, (4) a list of recommendation.

Moskowitz, P.D.; Zweibel, K. (eds.)

1992-01-01T23:59:59.000Z

458

Development of New Low-Cost, High-Performance, PV Module Encapsulant/Packaging Materials: Annual Technical Progress Report, Phase 1, 22 October 2002-30 September 2003  

SciTech Connect (OSTI)

The primary objectives of this subcontract are for Specialized Technology Resources, Inc., to work with U.S.-based PV module manufacturers representing crystalline silicon, polycrystalline silicon, amorphous silicon, copper indium diselenide (CIS), and other state-of-the-art thin-film technologies to develop formulations, production processes, prototype and qualify new low-cost, high-performance photovoltaic module encapsulants/packaging materials. The manufacturers will assist in identifying each materials' deficiencies while undergoing development, and then ultimately in qualifying the final optimized materials designed to specifically meet their requirements. Upon completion of this program, new low-cost, high-performance, PV module encapsulant/packaging materials will be qualified, by one or more end-users, for their specific application. Information gathering on topics related to thin-film module technology, including device performance/failure analysis, glass stability, and de vice encapsulation, has been completed. This information has provided concepts and considerations for module failure analysis, accelerated testing design, and encapsulation formulation strategy for thin-film modules.

Agro, S. C.; Tucker, R. T.

2004-03-01T23:59:59.000Z

459

Two dimensional metallic photonic crystals for light trapping and anti-reflective coatings in thermophotovoltaic applications  

SciTech Connect (OSTI)

We report the development of a front-side contact design for thermophotovoltaics that utilizes metallic photonic crystals (PhCs). While this front-side grid replacement covers more surface area of the semiconductor, a higher percentage of photons is shown to be converted to usable power in the photodiode. This leads to a 30% increase in the short-circuit current of the gallium antimonide thermophotovoltaic cell.

Shemelya, Corey; DeMeo, Dante F.; Vandervelde, Thomas E. [The Renewable Energy and Applied Photonics Laboratories, Electrical and Computer Engineering, Tufts University, Medford, Massachusetts 02155 (United States)

2014-01-13T23:59:59.000Z

460

OBSERVATOIRE DE GRENOBLE LABORATOIRE DE GEOPHYSIQUE INTERNE ET TECTONOPHYSIQUE  

E-Print Network [OSTI]

thermo-compositionnelle dans la partie de fer liquide du noyau de la Terre est la source d'´energie la´e- sente une premi`ere ´etape vers cet objectif: la mod´elisation de l'´ecou- lement convectif sans champ d'un at modelling the non-magnetic convective flow of a spherical shell of liquid metal (gallium), in the regime

Aubert, Julien

Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Experiment Safety Assurance Package for Mixed Oxide Fuel Irradiation in an Average Power Position (I-24) in the Advanced Test Reactor  

SciTech Connect (OSTI)

The Fissile Material Disposition Program Light Water Reactor Mixed Oxide Fuel Irradiation Test Project Plan details a series of test irradiations designed to investigate the use of weapons-grade plutonium in MOX fuel for light water reactors (LWR) (Cowell 1996a, Cowell 1997a, Thoms 1997a). Commercial MOX fuel has been successfully used in overseas reactors for many years; however, weapons-derived test fuel contains small amounts of gallium (about 2 parts per million). A concern exists that the gallium may migrate out of the fuel and into the clad, inducing embrittlement. For preliminary out-of-pile experiments, Wilson (1997) states that intermetallic compound formation is the principal interaction mechanism between zircaloy cladding and gallium. This interaction is very limited by the low mass of gallium, so problems are not expected with the zircaloy cladding, but an in-pile experiment is needed to confirm the out-of-pile experiments. Ryskamp (1998) provides an overview of this experiment and its documentation. The purpose of this Experiment Safety Assurance Package (ESAP) is to demonstrate the safe irradiation and handling of the mixed uranium and plutonium oxide (MOX) Fuel Average Power Test (APT) experiment as required by Advanced Test Reactor (ATR) Technical Safety Requirement (TSR) 3.9.1 (LMITCO 1998). This ESAP addresses the specific operation of the MOX Fuel APT experiment with respect to the operating envelope for irradiation established by the Upgraded Final Safety Analysis Report (UFSAR) Lockheed Martin Idaho Technologies Company (LMITCO 1997a). Experiment handling activities are discussed herein.

J. M . Ryskamp; R. C. Howard; R. C. Pedersen; S. T. Khericha

1998-10-01T23:59:59.000Z

462

Determination of the retention function of [superscript 67]Ga in canine  

E-Print Network [OSTI]

, "Standards for Protection Against Radiation", Texas Regulations for Control of Radiation, Section 21. 303, (Austin, Texas: Texas Department of Health). USNRC80 U. S. Nuclear Regulatory... produced by varying degrees of bone neoplasia in the patients. In all three species, excretion of gallium was greatest within 24 hours of injection; diminishing thereafter. Edwards et al (Ed70) reported that human patients injected with carrier-free* 67...

Schoenbucher, Bruce

1982-01-01T23:59:59.000Z

463

Phosphors containing boron and metals of Group IIIA and IIIB  

DOE Patents [OSTI]

A phosphor comprises: (a) at least a first metal selected from the group consisting of yttrium and elements of lanthanide series other than europium; (b) at least a second metal selected from the group consisting of aluminum, gallium, indium, and scandium; (c) boron; and (d) europium. The phosphor is used in light source that comprises a UV radiation source to convert UV radiation to visible light.

Setlur, Anant Achyut; Srivastava, Alok Mani; Comanzo, Holly Ann; Manivannan, Venkatesan

2006-10-31T23:59:59.000Z

464

Radiopharmaceuticals for imaging the heart  

DOE Patents [OSTI]

Radiopharmaceuticals for imaging myocardial tissues are prepared by forming lipophilic, cationic complexes of radioactive metal ions with metal chelating ligands comprising the Schiff base adducts of triamines and tetraamines with optionally substituted salicylaldehydes. The lipophilic, cationic, radioactive complexes of the invention exhibit high uptake and retention in myocardial tissues. Preferred gallium-68(III) complexes in accordance with this invention can be used to image the heart using positron emission tomography. 6 figures.

Green, M.A.; Tsang, B.W.

1994-06-28T23:59:59.000Z

465

Radiopharmaceuticals for imaging the heart  

DOE Patents [OSTI]

Radiopharmaceuticals for imaging myocardial tissues are prepared by forming lipophilic, cationic complexes of radioactive metal ions with metal chelating ligands comprising the Schiff base adducts of triamines and tetraamines with optionally substituted salicylaldehydes. The lipophilic, cationic, radioactive complexes of the invention exhibit high uptake and retention in myocardial tissues. Preferred gallium-68(III) complexes in accordance with this invention can be used to image the heart using positron emission tomography.

Green, Mark A. (West Lafayette, IN); Tsang, Brenda W. (Lafayette, IN)

1994-01-01T23:59:59.000Z

466

Electronic structure of [Ga2(tren)2(CAsq,cat )](BPh4)2(BF4): An EPR, ENDOR, and  

E-Print Network [OSTI]

Electronic structure of [Ga2(tren)2(CAsq,cat )](BPh4)2(BF4): An EPR, ENDOR, and density functional. Keywords: EPR ENDOR Semiquinone Gallium Spin exchange DFT a b s t r a c t The bimetallic [M1M2(tren)2(CAn)2(CAsq,cat )]3+ . This report deals with the interpretation of the EPR and ENDOR spectra of [Ga2

McCusker, James K.

467

NREL Spurred the Success of Multijunction Solar Cells (Fact Sheet)  

SciTech Connect (OSTI)

Many scientists once believed that high-quality gallium indium phosphide (GaInP) alloys could not be grown for use as semiconductors because the alloys would separate. However, researchers at the National Renewable Energy Laboratory (NREL) thought differently, and they employed GaInP in a material combination that allowed the multijunction cell to flourish. The multijunction cell is now the workhorse that powers satellites and the catalyst for renewed interest in concentrator photovoltaic products.

Not Available

2013-08-01T23:59:59.000Z

468

Sustainable Electricity Factsheets | ornl.gov  

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469

Sustainable Land Lab Tour | Photosynthetic Antenna Research Center  

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470

Sustainable NREL Biennial Report, FY 2012 - 2013 (Management Report), NREL (National Renewable Energy Laboratory)  

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471

Sustainable Success | Y-12 National Security Complex  

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472

Sustainable Transportation Program | Clean Energy | ORNL  

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473

Sustainable Transportation Program | ornl.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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474

Sustainable Transportation Update | ornl.gov  

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475

Sustainable Transportation | Department of Energy  

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476

Symmetry Breaking of H2 Dissociation by a Single Photon  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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477

Symmetry Breaking of H2 Dissociation by a Single Photon  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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478

Synaptic Arrangement of the Neuroligin/beta-Neurexin Complex Revealed by  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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479

Structures and Activities Shed Light into Cancer and Aging Phenotypes of  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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480

Structures for Three Membrane Transport Proteins Yield Functional Insights  

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Note: This page contains sample records for the topic "gallium diselenide cigs" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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481

Structures of Clamp-Loader Complexes Are Key to DNA Replication  

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482

Structures of Domains I and IV from YbbR are representative of a widely  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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483

Structures of the Ribosome in Intermediate States of Ratcheting  

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484

Structures of the Ribosome in Intermediate States of Ratcheting  

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485

Student Research Papers | The Ames Laboratory  

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486

Student Summer Internships at NERSC  

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487

Student UEC Member Goes Above and Beyond  

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488

Student engineers design and race battery-powered cars in this year's  

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489

Students gain work experience at WIPP  

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490

Studies Bolster Promise of Topological Insulators  

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491

Study identifies two Northwest basalt rock caverns sites for storing energy  

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492

Study of Copper Diffusion Through Ruthenium Thin Film by Photoemission  

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493

Study of Highly Selective and Efficient Thiol Derivatization using Selenium  

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494

Studying Complex Structures in the Blink of an Eye | The Ames Laboratory  

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495

Studying the Solar System's Chemical Recipe  

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496

Substituted molecular p-dopants: A theoretical study. | EMSL  

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497

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

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498

Substrate-Induced Band-Gap Opening in Epitaxial Graphene  

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499

Success Story: Capstone Turbine Corporation | Department of Energy  

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500

Suite of Photo-electrochemical Technologies for Hydrogen Production -  

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