National Library of Energy BETA

Sample records for gallium arsenide gaas

  1. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

    SciTech Connect (OSTI)

    Yang, Seong-Uk; Jung, Woo-Shik; Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho; Park, Jin-Hong

    2014-02-01

    Highlights: We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. InAs and InGaAs formed by this process decrease an electron barrier height. Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, JV measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

  2. The comparison between gallium arsenide and indium gallium arsenide as materials for solar cell performance using Silvaco application

    SciTech Connect (OSTI)

    Zahari, Suhaila Mohd; Norizan, Mohd Natashah; Mohamad, Ili Salwani; Osman, Rozana Aina Maulat; Taking, Sanna

    2015-05-15

    The work presented in this paper is about the development of single and multilayer solar cells using GaAs and InGaAs in AM1.5 condition. The study includes the modeling structure and simulation of the device using Silvaco applications. The performance in term of efficiency of Indium Gallium Arsenide (InGaAs) and GaAs material was studied by modification of the doping concentration and thickness of material in solar cells. The efficiency of the GaAs solar cell was higher than InGaAs solar cell for single layer solar cell. Single layer GaAs achieved an efficiency about 25% compared to InGaAs which is only 2.65% of efficiency. For multilayer which includes both GaAs and InGaAs, the output power, P{sub max} was 8.91nW/cm² with the efficiency only 8.51%. GaAs is one of the best materials to be used in solar cell as a based compared to InGaAs.

  3. Gallium arsenide recycle chemistry and metallurgy

    SciTech Connect (OSTI)

    Bartlett, R.W.

    1987-03-23

    Research was successfully conducted on a smelting approach to separate gallium from arsenic using a liquid copper alloy to collect arsenic while oxidizing the gallium into a soda-silica slag. The slag and copper form two immiscible liquid phases. With GaAs in powder form, smelting at 1150 to 1220{degree}C yields 98% of the gallium in the slag and at least 96% of the arsenic in the copper. The gallium concentration in this slag is, relative to other sources, very high, and it can be processed further to obtain crude gallium. The effect of chemical oxidizers on arsenic and gallium distribution between slag and copper was determined. The solidified copper-arsenic alloy is environmentally inert. However, any precious metals present with the electronic scrap will nearly completely collect in the copper. Commercial copper refineries are capable of recovering precious metals from the copper-arsenic alloy, and are equipped to handle large amounts of arsenic when compared with the amount of arsenic used in GaAs devices, even with many fold future expansions.

  4. Inhalation developmental toxicology studies: Gallium arsenide in mice and rats

    SciTech Connect (OSTI)

    Mast, T.J.; Greenspan, B.J.; Dill, J.A.; Stoney, K.H.; Evanoff, J.J.; Rommereim, R.L.

    1990-12-01

    Gallium arsenide is a crystalline compound used extensively in the semiconductor industry. Workers preparing solar cells and gallium arsenide ingots and wafers are potentially at risk from the inhalation of gallium arsenide dust. The potential for gallium arsenide to cause developmental toxicity was assessed in Sprague- Dawley rats and CD-1 (Swiss) mice exposed to 0, 10, 37, or 75 mg/m{sup 3} gallium arsenide, 6 h/day, 7 days/week. Each of the four treatment groups consisted of 10 virgin females (for comparison), and {approx}30 positively mated rats or {approx}24 positively mated mice. Mice were exposed on 4--17 days of gestation (dg), and rats on 4--19 dg. The day of plug or sperm detection was designated as 0 dg. Body weights were obtained throughout the study period, and uterine and fetal body weights were obtained at sacrifice (rats, 20 dg; mice, 18 dg). Implants were enumerated and their status recorded. Live fetuses were sexed and examined for gross, visceral, skeletal, and soft-tissue craniofacial defects. Gallium and arsenic concentrations were determined in the maternal blood and uterine contents of the rats (3/group) at 7, 14, and 20 dg. 37 refs., 11 figs., 30 tabs.

  5. Pure silver ohmic contacts to N- and P- type gallium arsenide materials

    DOE Patents [OSTI]

    Hogan, Stephen J.

    1986-01-01

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components an n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffused layer and the substrate layer, wherein the n-type layer comprises a substantially low doping carrier concentration.

  6. Process for forming pure silver ohmic contacts to N- and P-type gallium arsenide materials

    DOE Patents [OSTI]

    Hogan, S.J.

    1983-03-13

    Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components a n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffuse layer and the substrate layer wherein the n-type layer comprises a substantially low doping carrier concentration.

  7. Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters

    SciTech Connect (OSTI)

    Muhammad, R.; Ahamad, R.; Ibrahim, Z.; Othaman, Z.

    2014-03-05

    Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the effects of V/III ratio on structural properties and current-voltage changes in the wires. Results show that GaAs NWs grow preferably in the wurtzite crystal structure than zinc blende crystal structure with increasing V/III ratio. Additionally, CAFM studies have revealed that zincblende nanowires indicate ohmic characteristic compared to oscillation current occurred for wurtzite structures. The GaAs NWs with high quality structures are needed in solar cells technology for trapping energy that directly converts of sunlight into electricity with maximum capacity.

  8. Outdoor Performance of a Thin-Film Gallium-Arsenide Photovoltaic Module

    SciTech Connect (OSTI)

    Silverman, T. J.; Deceglie, M. G.; Marion, B.; Cowley, S.; Kayes, B.; Kurtz, S.

    2013-06-01

    We deployed a 855 cm2 thin-film, single-junction gallium arsenide (GaAs) photovoltaic (PV) module outdoors. Due to its fundamentally different cell technology compared to silicon (Si), the module responds differently to outdoor conditions. On average during the test, the GaAs module produced more power when its temperature was higher. We show that its maximum-power temperature coefficient, while actually negative, is several times smaller in magnitude than that of a Si module used for comparison. The positive correlation of power with temperature in GaAs is due to temperature-correlated changes in the incident spectrum. We show that a simple correction based on precipitable water vapor (PWV) brings the photocurrent temperature coefficient into agreement with that measured by other methods and predicted by theory. The low operating temperature and small temperature coefficient of GaAs give it an energy production advantage in warm weather.

  9. Preliminary survey report: control technology for gallium arsenide processing at Morgan Semiconductor Division, Garland, Texas

    SciTech Connect (OSTI)

    Lenihan, K.L.

    1987-03-01

    The report covers a walk through survey made of the Morgan Semiconductor Facility in Garland, Texas, to evaluate control technology for gallium-arsenide dust in the semiconductor industry. Engineering controls included the synthesis of gallium-arsenide outside the crystal pullers to reduce arsenic residues in the pullers, also reducing worker exposure to arsenic during cleaning of the crystal pullers.

  10. Temperature dependence of carrier capture by defects in gallium arsenide

    SciTech Connect (OSTI)

    Wampler, William R.; Modine, Normand A.

    2015-08-01

    This report examines the temperature dependence of the capture rate of carriers by defects in gallium arsenide and compares two previously published theoretical treatments of this based on multi phonon emission (MPE). The objective is to reduce uncertainty in atomistic simulations of gain degradation in III-V HBTs from neutron irradiation. A major source of uncertainty in those simulations is poor knowledge of carrier capture rates, whose values can differ by several orders of magnitude between various defect types. Most of this variation is due to different dependence on temperature, which is closely related to the relaxation of the defect structure that occurs as a result of the change in charge state of the defect. The uncertainty in capture rate can therefore be greatly reduced by better knowledge of the defect relaxation.

  11. Light-trapping and recycling for extraordinary power conversion in ultra-thin gallium-arsenide solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Eyderman, Sergey; John, Sajeev

    2016-06-23

    Here, we demonstrate nearly 30% power conversion efficiency in ultra-thin (~200 nm) gallium arsenide photonic crystal solar cells by numerical solution of the coupled electromagnetic Maxwell and semiconductor drift-diffusion equations. Our architecture enables wave-interference-induced solar light trapping in the wavelength range from 300-865 nm, leading to absorption of almost 90% of incoming sunlight. Our optimized design for 200 nm equivalent bulk thickness of GaAs, is a square-lattice, slanted conical-pore photonic crystal (lattice constant 550 nm, pore diameter 600 nm, and pore depth 290 nm), passivated with AlGaAs, deposited on a silver back-reflector, with ITO upper contact and encapsulated with SiO2.more » Our model includes both radiative and non-radiative recombination of photo-generated charge carriers. When all light from radiative recombination is assumed to escape the structure, a maximum achievable photocurrent density (MAPD) of 27.6 mA/cm2 is obtained from normally incident AM 1.5 sunlight. For a surface non-radiative recombination velocity of 103 cm/s, this corresponds to a solar power conversion efficiency of 28.3%. When all light from radiative recombination is trapped and reabsorbed (complete photon recycling) the power conversion efficiency increases to 29%. If the surface recombination velocity is reduced to 10 cm/sec, photon recycling is much more effective and the power conversion efficiency reaches 30.6%.« less

  12. Dynamics of formation of photoresponse in a detector structure made of gallium arsenide

    SciTech Connect (OSTI)

    Ayzenshtat, G. I., E-mail: ayzen@mail.tomsknet.ru; Lelekov, M. A.; Tolbanov, O. P. [Tomsk State University (Russian Federation)

    2008-04-15

    The influence of capture effects on the characteristics of detectors of the ionizing radiation based on semi-insulating gallium arsenide is considered. Generation of nonequilibrium electrons and holes along the entire thickness of the active region was performed under illumination with an infrared light-emitting diode with a wavelength of 0.9 {mu}m. In this case, the situation emerging in the device structure under the effect of X-ray radiation or a high-energy electron beam was simulated. It is shown that the variation in the shape of the output signal with time in this case is caused by variation in the electric field profile due to the capture of holes at deep centers in gallium arsenide. An absolutely different distribution of the electric field emerges in the structure under irradiation of a semitransparent cathode of the structure with a red light-emitting diode, emission of which penetrates into the active region for mere 1 {mu}m. In this case, the transformation of the electric field is caused by the capture of electrons. Under the prolonged effect of such radiation, a space-charge-limited current mode emerges in the device.

  13. Application of the bounds-analysis approach to arsenic and gallium antisite defects in gallium arsenide

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wright, A. F.; Modine, N. A.

    2015-01-23

    The As antisite in GaAs (AsGa) has been the subject of numerous experimental and theoretical studies. Recent density-functional-theory (DFT) studies report results in good agreement with experimental data for the +2, +1, and 0 charge states of the stable EL2 structure, the 0 charge state of the metastable EL2* structure, and the activation energy to transform from EL2* to EL2 in the 0 charge state. However, these studies did not report results for EL2* in the -1 charge state. In this paper, we report new DFT results for the +2, +1, 0, and -1 charge states of AsGa, obtained usingmore » a semilocal exchange-correlation functional and interpreted using a bounds-analysis approach. In good agreement with experimental data, we find a -1/0 EL2* level 0.06 eV below the conduction-band edge and an activation energy of 0.05 eV to transform from EL2* to EL2 in the -1 charge state. While the Ga antisite in GaAs (GaAs) has not been studied as extensively as AsGa, experimental studies report three charge states (-2, -1, 0) and two levels (-2/-1, -1/0) close to the valence-band edge. Recent DFT studies report the same charge states, but the levels are found to be well-separated from the valence-band edge. To resolve this disagreement, we performed new DFT calculations for GaAs and interpreted them using a bounds analysis. The analysis identified the -1 and 0 charge states as hole states weakly bound to a highly-localized -2 charge state. Moreover, the -2/-1, -1/0 levels were found to be near the valence-band edge, in good agreement with the experimental data.« less

  14. Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

    SciTech Connect (OSTI)

    Wampler, William R.; Myers, Samuel M.

    2014-02-01

    A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defects within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.

  15. Simple intrinsic defects in GaAs : numerical supplement.

    SciTech Connect (OSTI)

    Schultz, Peter Andrew

    2012-04-01

    This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

  16. An experiment to test the viability of a gallium-arsenide cathode in a SRF electron gun

    SciTech Connect (OSTI)

    Kewisch,J.; Ben-Zvi, I.; Rao, T.; Burrill, A.; Pate, D.; Wu, Q.; Todd, R.; Wang, E.; Bluem, H.; Holmes, D.; Schultheiss, T.

    2009-05-04

    Strained gallium arsenide cathodes are used in electron guns for the production of polarized electrons. In order to have a sufficient quantum efficiency lifetime of the cathode the vacuum in the gun must be 10{sup -11} Torr or better, so that the cathode is not destroyed by ion back bombardment or through contamination with residual gases. All successful polarized guns are DC guns, because such vacuum levels can not be obtained in normal conducting RF guns. A superconductive RF gun may provide a sufficient vacuum level due to cryo-pumping of the cavity walls. We report on the progress of our experiment to test such a gun with normal GaAs-Cs crystals.

  17. (Ion beam deposition of epitaxial germanium and gallium arsenide layers): Foreign trip report, June 2, 1989--June 18, 1989

    SciTech Connect (OSTI)

    Haynes, T.E.

    1989-07-05

    The traveler presented an invited paper entitled ''Ion Beam Deposition of Epitaxial Germanium and Gallium Arsenide Layers'' at the Twelfth Symposium on Ion Sources and Ion-Assisted Technology (ISIAT '89) in Tokyo. During informal conversations at this meeting, the traveler was informed about a new Japanese initiative, sponsored by the Ministry of International Trade and Industry and an industrial consortium, to establish an Ion Engineering Research Center, whose purpose will be to provide sophisticated equipment and technology base for exploring and developing new applications of ion beam processing. The traveler also visited five Japanese laboratories involved in research on ion-solid interactions. Developments in ionized cluster beam (ICB) deposition were emphasized at ISIAT '89 and during visits to Kyoto University, where the ICB technique was pioneered, and to Mitsubishi Electric's Itami Works, where commercial ICB systems are now being produced. Discussions at Osaka University concentrated on the application of focused ion beams for maskless patterning of submicron devices and on recent studies of one- dimensional quantum effects in semiconductor wires. At Hitachi Research Laboratory, basic research on thin-film growth was described, as well as progress toward the development of a variable frequency RF quadrupole accelerator for ion implantation. Researchers at JAERI outlined programs in characterization and thin-film deposition of superconductors and in materials science studies using high-energy ion beams.

  18. Calculation of infrared plasma reflection spectra of inhomogeneously doped P-type gallium arsenide

    SciTech Connect (OSTI)

    CHEN Wei-xi; LI Guo-hua; NIU Jin-zhen; GUO Chang-zhi

    1982-01-01

    The influence of the surface concentration and concentration profile of free carriers, the layer thickness and free carrier concentration of the homogeneous substrate on the infrared plasma reflection spectra of inhomogeneously doped P-type GaAs layers is analyzed by computer solutions of differential equations for the optical admittance. Computed spectra are reported for four different profiles and several substrate concentrations. Methods for evaluation of the measured reflection spectra and the limitation of this technique are discussed.

  19. Fluorescent lifetime measurements of rare-earth elements in gallium arsenide. Master's thesis

    SciTech Connect (OSTI)

    Topp, D.J.

    1990-12-01

    Lifetime measurements of the excited states of three GaAs semiconductors doped with the rare earth elements Erbium (Er), Praseodymium (Pr), and Thulium (Tm) has been studied using a pulsed nitrogen laser and germanium detector. The measurements were made with an experimental set up with a system response time of 0.34 microseconds. A 330 milliwatt nitrogen laser with a wavelength of 3370 angstroms was used to excite transitions of the rare earth elements.

  20. Analysis of gallium arsenide deposition in a horizontal chemical vapor deposition reactor using massively parallel computations

    SciTech Connect (OSTI)

    Salinger, A.G.; Shadid, J.N.; Hutchinson, S.A.

    1998-01-01

    A numerical analysis of the deposition of gallium from trimethylgallium (TMG) and arsine in a horizontal CVD reactor with tilted susceptor and a three inch diameter rotating substrate is performed. The three-dimensional model includes complete coupling between fluid mechanics, heat transfer, and species transport, and is solved using an unstructured finite element discretization on a massively parallel computer. The effects of three operating parameters (the disk rotation rate, inlet TMG fraction, and inlet velocity) and two design parameters (the tilt angle of the reactor base and the reactor width) on the growth rate and uniformity are presented. The nonlinear dependence of the growth rate uniformity on the key operating parameters is discussed in detail. Efficient and robust algorithms for massively parallel reacting flow simulations, as incorporated into our analysis code MPSalsa, make detailed analysis of this complicated system feasible.

  1. Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices

    DOE Patents [OSTI]

    Mascarenhas, Angelo

    2015-07-07

    Isoelectronic co-doping of semiconductor compounds and alloys with acceptors and deep donors is sued to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. For example, Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, B and Bi, to customize solar cells, and other semiconductor devices. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  2. Optoelectronic simulation of GaAs solar cells with angularly selective filters

    SciTech Connect (OSTI)

    Kraus, Tobias Hhn, Oliver; Hauser, Hubert; Blsi, Benedikt

    2014-02-07

    We discuss the influence of angularly selective filters on thin film gallium arsenide solar cells. For this reason, the detailed balance model was refined to fit our needs with respect to Auger recombination, reflection, transmission, and realistic absorption. For calculating real systems, an approach was made to include optical effects of angularly selective filters into electron-hole dynamic equations implemented in PC1D, a one dimensional solar cell calculation tool. With this approach, we find a relative V{sub oc} increase of 5% for an idealized 100?nm GaAs cell, including Auger recombination.

  3. Ab initio structural and vibrational properties of GaAs diamondoids and nanocrystals

    SciTech Connect (OSTI)

    Abdulsattar, Mudar Ahmed; Hussein, Mohammed T.; Hameed, Hadeel Ali

    2014-12-15

    Gallium arsenide diamondoids structural and vibrational properties are investigated using density functional theory at the PBE/6-31(d) level and basis including polarization functions. Variation of energy gap as these diamondoids increase in size is seen to follow confinement theory for diamondoids having nearly equiaxed dimensions. Density of energy states transforms from nearly single levels to band structure as we reach larger diamondoids. Bonds of surface hydrogen with As atoms are relatively localized and shorter than that bonded to Ga atoms. Ga-As bonds have a distribution range of values due to surface reconstruction and effect of bonding to hydrogen atoms. Experimental bulk Ga-As bond length (2.45 Å) is within this distribution range. Tetrahedral and dihedral angles approach values of bulk as we go to higher diamondoids. Optical-phonon energy of larger diamondoids stabilizes at 0.037 eV (297 cm{sup -1}) compared to experimental 0.035 eV (285.2 cm{sup -1}). Ga-As force constant reaches 1.7 mDyne/Å which is comparable to Ga-Ge force constant (1.74 mDyne/Å). Hydrogen related vibrations are nearly constant and serve as a fingerprint of GaAs diamondoids while Ga-As vibrations vary with size of diamondoids.

  4. Heat load of a P-doped GaAs photocathode in SRF electron gun

    SciTech Connect (OSTI)

    Wang, E.; Ben-Zvi, I.; Kewisch, J.; Burrill, A.; Rao, T.; Wu, Q.; Jain, A.; Gupta, R.; Holmes, D.

    2010-05-23

    Many efforts were made over the last decades to develop a better polarized electron source for the high energy physics. Several laboratories operate DC guns with the Gallium-Arsenide photo-cathode, which yield a highly polarized electron beam. However, the beam's emittance might well be improved using a Superconducting RF electron gun, which delivers beams of higher brightness than DC guns does, because the field gradient at the cathode is higher. SRF guns with metal cathodes and CsTe cathodes have been tested successfully. To produce polarized electrons, a Gallium-Arsenide photo-cathode must be used: an experiment to do so in a superconducting RF gun is under way at BNL. Since the cathode will be normal conducting, the problem about the heat load stemming from the cathode arises. We present our measurements of the electrical resistance of GaAs at cryogenic temperatures, a prediction of the heat load and the verification by measuring the quality factor of the gun with and without cathode.

  5. Enhanced charge recombination due to surfaces and twin defects in GaAs nanostructures

    SciTech Connect (OSTI)

    Brown, Evan; Sheng, Chunyang; Nakano, Aiichiro; Shimamura, Kohei; Shimojo, Fuyuki

    2015-02-07

    Power conversion efficiency of gallium arsenide (GaAs) nanowire (NW) solar cells is severely limited by enhanced charge recombination (CR) at sidewall surfaces, but its atomistic mechanisms are not well understood. In addition, GaAs NWs usually contain a high density of twin defects that form a twin superlattice, but its effects on CR dynamics are largely unknown. Here, quantum molecular dynamics (QMD) simulations reveal the existence of an intrinsic type-II heterostructure at the (110) GaAs surface. Nonadiabatic quantum molecular dynamics (NAQMD) simulations show that the resulting staggered band alignment causes a photoexcited electron in the bulk to rapidly transfer to the surface. We have found orders-of-magnitude enhancement of the CR rate at the surface compared with the bulk value. Furthermore, QMD and NAQMD simulations show unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective CR centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and provides microscopic understanding of the underlying CR processes.

  6. Photovoltaic Single-Crystalline, Thin-Film Cell Basics

    Broader source: Energy.gov [DOE]

    Single-crystalline thin films are made from gallium arsenide (GaAs), a compound semiconductor that is a mixture of gallium and arsenic.

  7. Spire Semiconductor formerly Bandwidth Semiconductor LLC | Open...

    Open Energy Info (EERE)

    Zip: 3051 Product: Spire-owned US-based manufacturer of gallium-arsenide (GaAs) cells; offers design and manufacturing capabilities of concentrator cells. References: Spire...

  8. Thermal influence on charge carrier transport in solar cells based on GaAs PN junctions

    SciTech Connect (OSTI)

    Osses-Márquez, Juan; Calderón-Muñoz, Williams R.

    2014-10-21

    The electron and hole one-dimensional transport in a solar cell based on a Gallium Arsenide (GaAs) PN junction and its dependency with electron and lattice temperatures are studied here. Electrons and heat transport are treated on an equal footing, and a cell operating at high temperatures using concentrators is considered. The equations of a two-temperature hydrodynamic model are written in terms of asymptotic expansions for the dependent variables with the electron Reynolds number as a perturbation parameter. The dependency of the electron and hole densities through the junction with the temperature is analyzed solving the steady-state model at low Reynolds numbers. Lattice temperature distribution throughout the device is obtained considering the change of kinetic energy of electrons due to interactions with the lattice and heat absorbed from sunlight. In terms of performance, higher values of power output are obtained with low lattice temperature and hot energy carriers. This modeling contributes to improve the design of heat exchange devices and thermal management strategies in photovoltaic technologies.

  9. Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts

    SciTech Connect (OSTI)

    Chen, J. C. H. Klochan, O.; Micolich, A. P.; Hamilton, A. R.; Das Gupta, K.; Sfigakis, F.; Ritchie, D. A.; Trunov, K.; Wieck, A. D.; Reuter, D.

    2015-05-04

    We show that ballistic one-dimensional channels can be formed in an ambipolar device fabricated on a high mobility Al{sub 0.34}Ga{sub 0.66}As/GaAs heterostructure. Both electron and hole quantised conductances can be measured in the same one-dimensional channel. We have used this device to compare directly the subband spacings of the two charge carriers in the same confining potential and used this to compare the electron and hole effective masses.

  10. PROJECT PROFILE: 2D Materials for Low Cost Epitaxial Growth of Single Sun

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Gallium Arsenide (GaAs) Photovoltaics | Department of Energy 2D Materials for Low Cost Epitaxial Growth of Single Sun Gallium Arsenide (GaAs) Photovoltaics PROJECT PROFILE: 2D Materials for Low Cost Epitaxial Growth of Single Sun Gallium Arsenide (GaAs) Photovoltaics Funding Opportunity: SuNLaMP SunShot Subprogram: Photovoltaics Location: National Renewable Energy Laboratory, Golden, CO SunShot Award Amount: $125,000 Low-cost III-V cells will result in a breakthrough in photovoltaic (PV)

  11. Gallium nitride nanotube lasers

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Changyi; Liu, Sheng; Hurtado, Antonio; Wright, Jeremy Benjamin; Xu, Huiwen; Luk, Ting Shan; Figiel, Jeffrey J.; Brener, Igal; Brueck, Steven R. J.; Wang, George T.

    2015-01-01

    Lasing is demonstrated from gallium nitride nanotubes fabricated using a two-step top-down technique. By optically pumping, we observed characteristics of lasing: a clear threshold, a narrow spectral, and guided emission from the nanotubes. In addition, annular lasing emission from the GaN nanotube is also observed, indicating that cross-sectional shape control can be employed to manipulate the properties of nanolasers. The nanotube lasers could be of interest for optical nanofluidic applications or application benefitting from a hollow beam shape.

  12. Metal organic chemical vapor deposition of 111-v compounds on silicon

    DOE Patents [OSTI]

    Vernon, Stanley M.

    1986-01-01

    Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

  13. Potential effects of gallium on cladding materials

    SciTech Connect (OSTI)

    Wilson, D.F.; Beahm, E.C.; Besmann, T.M.; DeVan, J.H.; DiStefano, J.R.; Gat, U.; Greene, S.R.; Rittenhouse, P.L.; Worley, B.A.

    1997-10-01

    This paper identifies and examines issues concerning the incorporation of gallium in weapons derived plutonium in light water reactor (LWR) MOX fuels. Particular attention is given to the more likely effects of the gallium on the behavior of the cladding material. The chemistry of weapons grade (WG) MOX, including possible consequences of gallium within plutonium agglomerates, was assessed. Based on the calculated oxidation potentials of MOX fuel, the effect that gallium may have on reactions involving fission products and possible impact on cladding performance were postulated. Gallium transport mechanisms are discussed. With an understanding of oxidation potentials and assumptions of mechanisms for gallium transport, possible effects of gallium on corrosion of cladding were evaluated. Potential and unresolved issues and suggested research and development (R and D) required to provide missing information are presented.

  14. P-type gallium nitride

    DOE Patents [OSTI]

    Rubin, Michael; Newman, Nathan; Fu, Tracy; Ross, Jennifer; Chan, James

    1997-01-01

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

  15. P-type gallium nitride

    DOE Patents [OSTI]

    Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

    1997-08-12

    Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

  16. Npn double heterostructure bipolar transistor with ingaasn base region

    DOE Patents [OSTI]

    Chang, Ping-Chih; Baca, Albert G.; Li, Nein-Yi; Hou, Hong Q.; Ashby, Carol I. H.

    2004-07-20

    An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V.sub.on, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.

  17. Self- and zinc diffusion in gallium antimonide

    SciTech Connect (OSTI)

    Nicols, Samuel Piers

    2002-03-26

    The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT) [Dvorak

  18. Generator for gallium-68 and compositions obtained therefrom

    DOE Patents [OSTI]

    Neirinckx, Rudi D. (Medfield, MA); Davis, Michael A. (Westwood, MA)

    1981-01-01

    A generator for obtaining radioactive gallium-68 from germanium-68 bound in a resin containing unsubstituted phenolic hydroxyl groups. The germanium-68 is loaded into the resin from an aqueous solution of the germanium-68. A physiologically acceptable solution of gallium-68 having an activity of 0.1 to 50 millicuries per milliliter of gallium-68 solution is obtained. The solution is obtained from the bound germanium-68 which forms gallium-68 in situ by eluting the column with a hydrochloric acid solution to form an acidic solution of gallium-68. The acidic solution of gallium-68 can be neutralized.

  19. Multi-spectral optical absorption in substrate-free nanowire arrays

    SciTech Connect (OSTI)

    Zhang, Junpeng; Chia, Andrew; Boulanger, Jonathan; LaPierre, Ray; Dhindsa, Navneet; Khodadad, Iman; Saini, Simarjeet

    2014-09-22

    A method is presented of fabricating gallium arsenide (GaAs) nanowire arrays of controlled diameter and period by reactive ion etching of a GaAs substrate containing an indium gallium arsenide (InGaP) etch stop layer, allowing the precise nanowire length to be controlled. The substrate is subsequently removed by selective etching, using the same InGaP etch stop layer, to create a substrate-free GaAs nanowire array. The optical absorptance of the nanowire array was then directly measured without absorption from a substrate. We directly observe absorptance spectra that can be tuned by the nanowire diameter, as explained with rigorous coupled wave analysis. These results illustrate strong optical absorption suitable for nanowire-based solar cells and multi-spectral absorption for wavelength discriminating photodetectors. The solar-weighted absorptance above the bandgap of GaAs was 94% for a nanowire surface coverage of only 15%.

  20. BES Web Highlight: Single-mode gallium nitride nanowire lasers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Web Highlight: Single-mode gallium nitride nanowire lasers - Sandia Energy Energy Search ... Twitter Google + Vimeo GovDelivery SlideShare BES Web Highlight: Single-mode gallium ...

  1. Electron emitting device and method of making the same

    DOE Patents [OSTI]

    Olsen, Gregory Hammond; Martinelli, Ramon Ubaldo; Ettenberg, Michael

    1977-04-19

    A substrate of single crystalline gallium arsenide has on a surface thereof a layer of single crystalline indium gallium phosphide. A layer of single crystalline gallium arsenide is on the indium gallium phosphide layer and a work function reducing material is on the gallium arsenide layer. The substrate has an opening therethrough exposing a portion of the indium gallium phosphide layer.

  2. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, J.C.; Shul, R.J.

    1999-02-02

    An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.

  3. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, John C.; Shul, Randy J.

    1999-01-01

    An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

  4. Solar cell with a gallium nitride electrode

    DOE Patents [OSTI]

    Pankove, Jacques I.

    1979-01-01

    A solar cell which comprises a body of silicon having a P-N junction therein with a transparent conducting N-type gallium nitride layer as an ohmic contact on the N-type side of the semiconductor exposed to solar radiation.

  5. Beyond Silicon: Cutting the Costs of Solar Power

    DOE R&D Accomplishments [OSTI]

    Ahlberg, Liz

    2011-04-15

    New method of fabricating semiconductors from gallium arsenide promises more affordable solar power, improved semiconductor devices.

  6. Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer

    SciTech Connect (OSTI)

    Yang, Weiquan; Becker, Jacob; Liu, Shi; Kuo, Ying-Shen; Li, Jing-Jing; Zhang, Yong-Hang; Landini, Barbara; Campman, Ken

    2014-05-28

    This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In{sub 0.49}Ga{sub 0.51}P/GaAs/In{sub 0.49}Ga{sub 0.51}P double-heterostructure PN junction with an ultra-thin 300?nm thick GaAs absorber, combined with a 5??m thick Al{sub 0.52}In{sub 0.48}P layer with a textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF{sub 2}/ZnS anti-reflective coating demonstrated open-circuit voltages (V{sub oc}) up to 1.00?V, short-circuit current densities (J{sub sc}) up to 24.5?mA/cm{sup 2}, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated J{sub sc} and conversion efficiency of these devices are expected to reach 26.6?mA/cm{sup 2} and 20.7%, respectively.

  7. High intensity x-ray source using liquid gallium target

    DOE Patents [OSTI]

    Smither, Robert K.; Knapp, Gordon S.; Westbrook, Edwin M.; Forster, George A.

    1990-01-01

    A high intensity x-ray source that uses a flowing stream of liquid gallium as a target with the electron beam impinging directly on the liquid metal.

  8. Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate

    Broader source: Energy.gov [DOE]

    This project is producing high-efficiency semipolar light-emitting diodes (LEDs) on low-defect bulk gallium nitride (GaN) substrates.

  9. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  10. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  11. Laser photochemistry of gallium-containing compounds. [Trimethylgallium

    SciTech Connect (OSTI)

    Baughcum, S.L.; Oldenborg, R.C.

    1986-01-01

    The production of gas-phase gallium atoms in the photolysis of trimethylgallium has been investigated at 193 nm and at other laser wavelengths. Ground state (4 /sup 2/P/sup 0//sub 1/2) and metastable (4 /sup 2/P/sup 0//sub 3/2/) gallium atoms are detected using laser-induced fluorescence techniques. Our results indicate that gallium atoms continue to be produced at long times after the laser pulse. The observed dependence on photolysis laser fluence, trimethylgallium pressure, and buffer gas pressure are consistent with a mechanism in which highly excited gallium methyl radicals undergo unimolecular decomposition to produce gallium atoms. Since this process is observed to happen on the time scale of hundreds of microseconds, these results have important implications for studies of metal deposition and direct laser writing by laser photolysis of organometallic compounds. 31 refs., 5 figs.

  12. Compatibility of ITER candidate structural materials with static gallium

    SciTech Connect (OSTI)

    Luebbers, P.R.; Michaud, W.F.; Chopra, O.K.

    1993-12-01

    Tests were conducted on the compatibility of gallium with candidate structural materials for the International Thermonuclear Experimental Reactor, e.g., Type 316 SS, Inconel 625, and Nb-5 Mo-1 Zr alloy, as well as Armco iron, Nickel 270, and pure chromium. Type 316 stainless steel is least resistant to corrosion in static gallium and Nb-5 Mo-1 Zr alloy is most resistant. At 400{degrees}C, corrosion rates are {approx}4.0, 0.5, and 0.03 mm/yr for type 316 SS, Inconel 625, and Nb-5 Mo- 1 Zr alloy, respectively. The pure metals react rapidly with gallium. In contrast to findings in earlier studies, pure iron shows greater corrosion than nickel. The corrosion rates at 400{degrees}C are {ge}88 and 18 mm/yr, respectively, for Armco iron and Nickel 270. The results indicate that at temperatures up to 400{degrees}C, corrosion occurs primarily by dissolution and is accompanied by formation of metal/gallium intermetallic compounds. The solubility data for pure metals and oxygen in gallium are reviewed. The physical, chemical, and radioactive properties of gallium are also presented. The supply and availability of gallium, as well as price predictions through the year 2020, are summarized.

  13. Photoluminescence from GaAs nanodisks fabricated by using combination...

    Office of Scientific and Technical Information (OSTI)

    GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth Citation Details In-Document Search Title:...

  14. Interactions of Zircaloy Cladding with Gallium: Final Report

    SciTech Connect (OSTI)

    D.F. Wilson; E.T. Manneschmidt; J.F. King; J.P. Strizak; J.R. DiStefano

    1998-09-01

    The U.S. Department of Energy has established a dual-track approach to the disposition of plutonium arising from the dismantling of nuclear weapons. Both immobilization and reactor-based mixed-oxide (MOX) fuel technologies are being evaluated. The reactor-based MOX fuel option requires assessment of the potential impact of concentrations of gallium (on the order of 1 to 10 ppm), not present in conventional MOX fhel, on cladding material performance. Three previous repmts"3 identified several compatibility issues relating to the presence of gallium in MOX fuel and its possible reaction with fiel cladding. Gallium initially present in weapons-grade (WG) plutonium is largely removed during processing to produce MOX fhel. After blending the plutonium with uranium, only 1 to 10 ppm gallium is expected in the sintered MOX fuel. Gallium present as gallium oxide (G~OJ could be evolved as the suboxide (G~O). Migration of the evolved G~O and diffusion of gallium in the MOX matrix along thermal gradients could lead to locally higher concentrations of G~03. Thus, while an extremely low concentration of gallium in MOX fiel almost ensures a lack of significant interaction of gallium whh Zircaloy fhel cladding, there remains a small probability that corrosion effects will not be negligible. General corrosion in the form of surface alloying resulting from formation of intermetallic compounds between Zircaloy and gallium should be ma& limited and, therefore, superficial because of the expected low ratio of gallium to the surface area or volume of the Zircaloy cladding. Although the expected concentration of gallium is low and there is very limited volubility of gallium in zirconium, especially at temperatures below 700 "C,4 grain boundary penetration and liquid metal embrittlement (LME) are forms of localized corrosion that were also considered. One fuel system darnage mechanism, pellet clad interaction, has led to some failure of the Zircaloy cladding in light-water reactors (LWRS

  15. Cavity optomechanics in gallium phosphide microdisks

    SciTech Connect (OSTI)

    Mitchell, Matthew; Barclay, Paul E.; Hryciw, Aaron C.

    2014-04-07

    We demonstrate gallium phosphide (GaP) microdisk optical cavities with intrinsic quality factors >2.8??10{sup 5} and mode volumes <10(?/n){sup 3}, and study their nonlinear and optomechanical properties. For optical intensities up to 8.0??10{sup 4} intracavity photons, we observe optical loss in the microcavity to decrease with increasing intensity, indicating that saturable absorption sites are present in the GaP material, and that two-photon absorption is not significant. We observe optomechanical coupling between optical modes of the microdisk around 1.5??m and several mechanical resonances, and measure an optical spring effect consistent with a theoretically predicted optomechanical coupling rate g{sub 0}/2??30?kHz for the fundamental mechanical radial breathing mode at 488?MHz.

  16. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Print Wednesday, 21 December 2005 00:00 Low-dimensional materials have gained much attention not only because of the nonstop march toward miniaturization in the electronics industry but also for the exotic properties that are inherent in their small size. One approach for creating low-dimensional structures is to exploit the nanoscale or atomic-scale features

  17. Generator for ionic gallium-68 based on column chromatography

    DOE Patents [OSTI]

    Neirinckx, Rudi D.; Davis, Michael A.

    1981-01-01

    A physiologically acceptable solution of gallium-68 fluorides, having an activity of 0.1 to 50 millicuries per milliliter of solution is provided. The solution is obtained from a generator comprising germanium-68 hexafluoride bound to a column of an anion exchange resin which forms gallium-68 in situ by eluting the column with an acid solution to form a solution containing .sup.68 Ga-fluorides. The solution then is neutralized prior to administration.

  18. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  19. Gallium Safety in the Laboratory INEEL/CON-03-00078

    Office of Scientific and Technical Information (OSTI)

    ... 1987, pp. 411-418. 27. F. F. Hahn, R. K. Wolff, and R. F. Henderson, "Gallium Oxide ... Institute, December 1987. 28. R. K. Wolff et al., "Toxicity of Gallium Oxide ...

  20. Gallium based low-interaction anions

    DOE Patents [OSTI]

    King, Wayne A.; Kubas, Gregory J.

    2000-01-01

    The present invention provides: a composition of the formula M.sup.+x (Ga(Y).sub.4.sup.-).sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; a composition of the formula (R).sub.x Q.sup.+ Ga(Y).sub.4.sup.- where Q is selected from the group consisting of carbon, nitrogen, sulfur, phosphorus and oxygen, each R is a ligand selected from the group consisting of alkyl, aryl, and hydrogen, x is an integer selected from the group consisting of 3 and 4 depending upon Q, and each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide; an ionic polymerization catalyst composition including an active cationic portion and a gallium based weakly coordinating anion; and bridged anion species of the formula M.sup.+x.sub.y [X(Ga(Y.sub.3).sub.z ].sup.-y.sub.x where M is a metal selected from the group consisting of lithium, sodium, potassium, magnesium, cesium, calcium, strontium, thallium, and silver, x is an integer selected from the group consisting of 1 or 2, X is a bridging group between two gallium atoms, y is an integer selected from the group consisting 1 and 2, z is an integer of at least 2, each Y is a ligand selected from the group consisting of aryl, alkyl, hydride and halide with the proviso that at least one Y is a ligand selected from the group consisting of aryl, alkyl and halide.

  1. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  2. Analysis of Nitrogen Incorporation in Group III-Nitride-Arsenide Materials Using a Magnetic Sector Secondary-Ion Mass Spectrometry (SIMS) Instrument: Preprint

    SciTech Connect (OSTI)

    Reedy, R. C.; Geisz, J. F.; Kurtz, S. R.; Adams, R. O.; Perkins, C. L.

    2001-10-01

    Presented at the 2001 NCPV Program Review Meeting: Group III-nitride-arsenide materials were studied by SIMS, XRD, and Profiler to determine small amounts of nitrogen that can lower the alloys bandgap significantly.

  3. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  4. Sandia/CINT Research on the Cover of Applied Physics Letters

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... of partially processed device, showing titanium-gold (TiAu) gates on gallium-arsenide... of partially processed device, showing titanium-gold (TiAu) gates on gallium-arsenide...

  5. First results from the Soviet-American Gallium Experiment

    SciTech Connect (OSTI)

    Abazov, A.I.; Abdurashitov, D.N.; Anosov, O.L.; Eroshkina, L.A.; Faizov, E.L.; Gavrin, V.N.; Kalikhov, A.V.; Knodel, T.V.; Knyshenko, I.I.; Kornoukhov, V.N.; Mezentseva, S.A.; Mirmov, I.N.; Ostrinsky, A.I.; Petukhov, V.V.; Pshukov, A.M.; Revzin, N.Y.; Shikhin, A.A.; Timofeyev, P.V.; Veretenkin, E.P.; Vermul, V.M.; Zakharov, Y.; Zatsepin, G.T.; Zhandarov, V.I. . Inst. Yadernykh Issledovanij); Bowl

    1990-01-01

    The Soviet-American Gallium Experiment is the first experiment able to measure the dominant flux of low energy p-p solar neutrinos. Four extractions made during January to May 1990 from 30 tons of gallium have been counted and indicate that the flux is consistent with 0 SNU and is less than 72 SNU (68% CL) and less than 138 SNU (95% CL). This is to be compared with the flux of 132 SNU predicted by the Standard Solar Model. 10 refs., 4 figs., 1 tab.

  6. 03.01.16 RH Nickel-Gallium - JCAP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    CO2 electrochemical reduction catalyzed by bimetallic materials at low overpotential Torelli, D. A., Francis, S.A. et al. Nickel-Gallium-Catalyzed Electrochemical Reduction of CO2 to Highly Reduced Products at Low Overpotentials. ACS Catalysis, 6, 2100-2104, DOI: 10.1021/acscatal.5b02888 (2016). Scientific Achievement Electrocatalytic reduction of CO2 to highly reduced C2 (ethylene and ethane) and C1 (methane) products was accomplished on three different phases of nickel-gallium films at low

  7. In-Plane Electronic Anisotropy of Underdoped ___122___ Fe-Arsenide Superconductors Revealed by Measurements of Detwinned Single Crystals

    SciTech Connect (OSTI)

    Fisher, Ian Randal

    2012-05-08

    The parent phases of the Fe-arsenide superconductors harbor an antiferromagnetic ground state. Significantly, the Neel transition is either preceded or accompanied by a structural transition that breaks the four fold symmetry of the high-temperature lattice. Borrowing language from the field of soft condensed matter physics, this broken discrete rotational symmetry is widely referred to as an Ising nematic phase transition. Understanding the origin of this effect is a key component of a complete theoretical description of the occurrence of superconductivity in this family of compounds, motivating both theoretical and experimental investigation of the nematic transition and the associated in-plane anisotropy. Here we review recent experimental progress in determining the intrinsic in-plane electronic anisotropy as revealed by resistivity, reflectivity and ARPES measurements of detwinned single crystals of underdoped Fe arsenide superconductors in the '122' family of compounds.

  8. Gamma ray measurements with photoconductive detectors using a...

    Office of Scientific and Technical Information (OSTI)

    AND TECHNOLOGY; ARGON; BREMSSTRAHLUNG; DEUTERIUM; DIAMONDS; GALLIUM ARSENIDES; GAMMA DETECTION; GAMMA RADIATION; HYDROGEN; MEV RANGE; NEON; PHOTOCONDUCTORS; PHOTOMULTIPLIERS;...

  9. Compatibility of ITER candidate materials with static gallium

    SciTech Connect (OSTI)

    Luebbers, P.R.; Chopra, O.K.

    1995-09-01

    Corrosion tests have been conducted to determine the compatibility of gallium with candidate structural materials for the International Thermonuclear Experimental Reactor (ITER) first wall/blanket systems, e.g., Type 316 stainless steel (SS), Inconel 625, and Nb-5 Mo-1 Zr. The results indicate that Type 316 SS is least resistant to corrosion in static gallium and Nb-5 Mo-1 Zr alloy is most resistant. At 400 C, corrosion rates for Type 316 SS, Inconel 625, and Nb-5 Mo-1 Zr alloy are {approx} 4.0, 0.5, and 0.03 mm/yr, respectively. Iron, nickel, and chromium react rapidly with gallium. Iron shows greater corrosion than nickel at 400 C ({ge} 88 and 18 mm/yr, respectively). The present study indicates that at temperatures up to 400 C, corrosion occurs primarily by dissolution and is accompanied by formation of metal/gallium intermetallic compounds. The growth of intermetallic compounds may control the overall rate of corrosion.

  10. Bismuth-induced phase control of GaAs nanowires grown by molecular...

    Office of Scientific and Technical Information (OSTI)

    Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy Citation Details In-Document Search Title: Bismuth-induced phase control of GaAs nanowires grown by ...

  11. High-Efficiency GaAs Thin-Film Solar Cell Reliability | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GaAs Thin-Film Solar Cell Reliability High-Efficiency GaAs Thin-Film Solar Cell Reliability Presented at the PV Module Reliability Workshop, February 26 - 27 2013, Golden, Colorado ...

  12. Electron-limiting defect complex in hyperdoped GaAs: The D D...

    Office of Scientific and Technical Information (OSTI)

    Electron-limiting defect complex in hyperdoped GaAs: The D D X center Prev Next Title: Electron-limiting defect complex in hyperdoped GaAs: The D D X center Authors: Ma, Jie ...

  13. Vertical zone melt growth of GaAs

    SciTech Connect (OSTI)

    Henry, R.L.; Nordquist, P.E.R.; Gorman, R.J.

    1993-12-31

    A Vertical Zone Melt (VZM) technique has been applied to the single crystal growth of GaAs. A pyrolytic boron nitride crucible and a (100) oriented seed were used along with liquid encapsulation by boric oxide. In the case of GaAs, the ampoule was pressurized with either argon or argensic vapor from elemental arsenic at pressures ranging from 1 to 2 atmospheres. A molten zone length of 22 mm gave a growth interface which is nearly flat and resulted in routine single crystal growth. Temperature gradients of 4{degrees}C/cm. and 9{degrees}C/cm. have produced dislocation densities of <1000/cm{sup 2} and 2000-5000/cm{sup 2} respectively for 34 mm diameter crystals of GaAs. Post growth cooling rates for GaAs have been 35, 160 and 500{degrees}C/hr. The cooling rate has been found to affect the number and size of arsenic precipitates and the EL2 concentration in the GaAs crystal. The effects of these and other growth parameters on the crystalline perfection and electrical properties of the crystals will be discussed.

  14. Methylthiol adsorption on GaAs(100)-(2 x 4) surface: Ab initio quantum-chemical analysis

    SciTech Connect (OSTI)

    Lebedev, M. V.

    2008-09-15

    Quantum-chemical cluster calculations within the density functional theory are performed to study the mechanism of adsorption of the methylthiol molecule CH{sub 3}SH on an As-As dimer on a GaAs (100) surface. It is shown that the adsorption of the molecule can proceed through dissociation of either the S-H or C-S bond. The lowest energy has the state of dissociative adsorption with the rupture of the C-S bond resulting in the formation of a methane molecule and sulfur adatom incorporated between surface arsenic atoms constituting the dimer. A somewhat higher energy has the state of dissociative adsorption with the rupture of the S-H bond. In this state the CH{sub 3}S-radical is adsorbed at an arsenic atom constituting dimer and the hydrogen atom is adsorbed at a gallium atom bonded to this arsenic atom. These two states provide chemical and electronic passivation of the semiconductor surface.

  15. Electronic contribution to friction on GaAs

    SciTech Connect (OSTI)

    Applied Science and Technology Graduate Group, UC Berkeley; Dept. of Materials Sciences and Engineering, UC Berkeley; Salmeron, Miquel; Qi, Yabing; Park, J.Y.; Hendriksen, B.L.M.; Ogletree, D.F.; Salmeron, Miquel

    2008-04-15

    The electronic contribution to friction at semiconductor surfaces was investigated by using a Pt-coated tip with 50nm radius in an atomic force microscope sliding against an n-type GaAs(100) substrate. The GaAs surface was covered by an approximately 1 nm thick oxide layer. Charge accumulation or depletion was induced by the application of forward or reverse bias voltages. We observed a substantial increase in friction force in accumulation (forward bias) with respect to depletion (reverse bias). We propose a model based on the force exerted by the trapped charges that quantitatively explains the experimental observations of excess friction.

  16. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-01

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

  17. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D. J.; Kurtz, Sarah R.; Kibbler, A. E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-15

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.

  18. Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

    SciTech Connect (OSTI)

    Zhang, Jingyun; Si, Mengwei; Wu, Heng; Ye, Peide D.; Lou, Xiabing; Gordon, Roy G.; Shao, Jiayi; Manfra, Michael J.

    2015-02-16

    Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La{sub 2}O{sub 3} as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an I{sub ON}/I{sub OFF} ratio of greater than 10{sup 7}.

  19. Preparation Of Copper Indium Gallium Diselenide Films For Solar Cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N.; Contreras, Miguel A.; Keane, James; Tennant, Andrew L. , Tuttle, John R.; Ramanathan, Kannan; Noufi, Rommel

    1998-08-08

    High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

  20. Application of the bounds-analysis approach to arsenic and gallium...

    Office of Scientific and Technical Information (OSTI)

    Details In-Document Search This content will become publicly available on January 23, 2016 Title: Application of the bounds-analysis approach to arsenic and gallium antisite...

  1. Gallium Safety in the Laboratory INEEL/CON-03-00078

    Office of Scientific and Technical Information (OSTI)

    or represents that its use by such third party would not infringe privately owned rights. ... gallium surfaces with oils from human skin, and gloves protect against puncture wounds. ...

  2. HIGH-QUALITY, LOW-COST BULK GALLIUM NITRIDE SUBSTRATES GROWN...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    by 60%, and energy for information technology infrastructure power delivery by 20%. High-Quality, Low-Cost Bulk Gallium Nitride Substrates (1009.69 KB) More Documents & ...

  3. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Print Low-dimensional materials have gained much attention not only because of the nonstop march toward miniaturization in the electronics industry but also for the exotic properties that are inherent in their small size. One approach for creating low-dimensional structures is to exploit the nanoscale or atomic-scale features that exist naturally in the three-dimensional (bulk) form of materials. By this means, a group from the

  4. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Print Low-dimensional materials have gained much attention not only because of the nonstop march toward miniaturization in the electronics industry but also for the exotic properties that are inherent in their small size. One approach for creating low-dimensional structures is to exploit the nanoscale or atomic-scale features that exist naturally in the three-dimensional (bulk) form of materials. By this means, a group from the

  5. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Print Low-dimensional materials have gained much attention not only because of the nonstop march toward miniaturization in the electronics industry but also for the exotic properties that are inherent in their small size. One approach for creating low-dimensional structures is to exploit the nanoscale or atomic-scale features that exist naturally in the three-dimensional (bulk) form of materials. By this means, a group from the

  6. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Print Low-dimensional materials have gained much attention not only because of the nonstop march toward miniaturization in the electronics industry but also for the exotic properties that are inherent in their small size. One approach for creating low-dimensional structures is to exploit the nanoscale or atomic-scale features that exist naturally in the three-dimensional (bulk) form of materials. By this means, a group from the

  7. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide Layers Print Low-dimensional materials have gained much attention not only because of the nonstop march toward miniaturization in the electronics industry but also for the exotic properties that are inherent in their small size. One approach for creating low-dimensional structures is to exploit the nanoscale or atomic-scale features that exist naturally in the three-dimensional (bulk) form of materials. By this means, a group from the

  8. Electrochemical Solution Growth: Gallium Nitride Crystal Growth - Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovation Portal Vehicles and Fuels Vehicles and Fuels Building Energy Efficiency Building Energy Efficiency Find More Like This Return to Search Electrochemical Solution Growth: Gallium Nitride Crystal Growth Sandia National Laboratories Contact SNL About This Technology Publications: PDF Document Publication Market Sheet (886 KB) Technology Marketing SummarySandia National Laboratories has developed a disruptive new crystal growth technology, called Electrochemical Solution Growth (ESG).

  9. Synthesis and use of (polyfluoroaryl)fluoroanions of aluminum, gallium and indium

    DOE Patents [OSTI]

    Marks, Tobin J.; Chen, You-Xian

    2000-01-01

    Salts of (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are described. The (polyfluoroaryl)fluoroanions have the formula [ER'R"R'"F].sup..crclbar. wherein E is aluminum, gallium, or indium, wherein F is fluorine, and wherein R', R", and R'" is each a fluorinated phenyl, fluorinated biphenyl, or fluorinated polycyclic group.

  10. Radiation damage of GaAs thin-film solar cells on Si substrates

    SciTech Connect (OSTI)

    Itoh, Y.; Yamaguchi, M.; Nishioka, T.; Yamamoto, A.

    1987-01-15

    1-MeV electron irradiation damages in GaAs thin-film solar cells on Si substrates are examined for the first time. Damage constant for minority-carrier diffusion length in GaAs heteroepitaxial films on Si substrates is found to be the same as that in GaAs homoepitaxial films on GaAs substrates. This agreement suggests that GaAs/Si has the same defect introduction rate with radiation as GaAs/GaAs. The degradation of GaAs solar cells on Si with electron irradiation is less than that of GaAs solar cells on GaAs, because in the present, GaAs films on Si substrates have lower minority-carrier diffusion length compared to GaAs films on GaAs and these films are insensitive to radiation. The p/sup +/-p/sup +/-n AlGaAs-GaAs heteroface solar cell with junction depth of about 0.3 ..mu..m is concluded to be useful for a high-efficiency and radiation-resistant solar cell fabricated on a Si substrate.

  11. Testing a GaAs cathode in SRF gun

    SciTech Connect (OSTI)

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-03-28

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high

  12. Formation and properties of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Lockwood, D.J.; Fraser, J.W.; Graham, M.J.; Isaacs, H.S.

    1996-06-01

    Porous structures on n-type GaAs (100) can be grown electrochemically in chloride-containing solutions. Crystallographic etching of the sample is a precursor stage of the attack. Polarization curves reveal the existanece of a critical onset potential for por formation (PFP). PFP is strongly dependent on the doping level of the sample and presence of surface defects. Good agreement between PFP and breakdown voltage of the space charge layer is found. Surface analysis by EDX, AES, and XPS show that the porous structure consists mainly of GaAs and that anion uptake in the structure can only observed after attackhas been initiated. Photoluminescence measurements reveal (under certain conditions) visible light emission from the porous structure.

  13. Double Power Output for GaAs Solar Cells Embedded in Luminescent...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Double power output of bifacial thin-film GaAs microscale solar cells is achieved by embedding in luminescent waveguides (LSCs) with light- trapping backside reflectors (BSRs). ...

  14. Study on natural convection capability of liquid gallium for passive decay heat removal system (PDHRS)

    SciTech Connect (OSTI)

    Kang, S.; Ha, K. S.; Lee, S. W.; Park, S. D.; Kim, S. M.; Seo, H.; Kim, J. H.; Bang, I. C.

    2012-07-01

    The safety issues of the SFRs are important due to the fact that it uses sodium as a nuclear coolant, reacting vigorously with water and air. For that reason, there are efforts to seek for alternative candidates of liquid metal coolants having excellent heat transfer property and to adopt improved safety features to the SFR concepts. This study considers gallium as alternative liquid metal coolant applicable to safety features in terms of chemical activity issue of the sodium and aims to experimentally investigate the natural convection capability of gallium as a feasibility study for the development of gallium-based passive safety features in SFRs. In this paper, the design and construction of the liquid gallium natural convection loop were carried out. The experimental results of heat transfer coefficient of liquid gallium resulting in heat removal {approx}2.53 kW were compared with existing correlations and they were much lower than the correlations. To comparison of the experimental data with computer code analysis, gallium property code was developed for employing MARS-LMR (Korea version of RELAP) based on liquid gallium as working fluid. (authors)

  15. Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jacobs, Benjamin W.; Ayres, Virginia M.; Stallcup, Richard E.; Hartman, Alan; Tupta, Mary Ann; Baczewski, Andrew David; Crimp, Martin A.; Halpern, Joshua B.; He, Maoqi; Shaw, Harry C.

    2007-10-19

    Two-point and four-point probe electrical measurements of a biphasic gallium nitride nanowire and current–voltage characteristics of a gallium nitride nanowire based field effect transistor are reported. The biphasic gallium nitride nanowires have a crystalline homostructure consisting of wurtzite and zinc-blende phases that grow simultaneously in the longitudinal direction. There is a sharp transition of one to a few atomic layers between each phase. Here, all measurements showed high current densities. Evidence of single-phase current transport in the biphasic nanowire structure is discussed.

  16. Recent developments in high-efficiency PV cells

    SciTech Connect (OSTI)

    Deb, S.

    2000-05-22

    Enormous progress has been made in recent years on a number of photovoltaic (PV) materials and devices in terms of conversion efficiencies. Ultrahigh-efficiency (>30{percent}) PV cells have been fabricated from gallium arsenide (GaAs) and its ternary alloys such as gallium indium phosphide (GaInP{sub 2}). The high-efficiency GaAs-based solar cells are being produced on a commercial scale, particularly for space applications. Efficiencies in the range of 18{percent} to 24{percent} have been achieved in traditional silicon-based devices fabricated from both multicrystalline and single-crystal materials. Major advances in efficiency have also been made on various thin-film solar cells based on amorphous silicon (aSi:H), copper gallium indium diselenide (CIGS), and cadmium telluride materials. This paper gives a brief overview of the recent progress in PV cell efficiencies based on these materials and devices.

  17. HIGH-QUALITY, LOW-COST BULK GALLIUM NITRIDE SUBSTRATES GROWN...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Efficient manufacturing of gallium nitride (GaN) could reduce the cost of and improve the output for light-emitting diodes, solid-state lighting, laser displays, and other power ...

  18. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  19. Polycrystalline GaAs solar cells on low-cost Silicon-Film{trademark} substrates

    SciTech Connect (OSTI)

    Mauk, M.G.; Feyock, B.W.; Hall, R.B.; Cavanaugh, K.D.; Cotter, J.E.

    1997-12-31

    The authors assess the potential of a low-cost, large-area Silicon-Film{trademark} sheet as a substrate for thin-film polycrystalline GaAs solar cells. Silicon-Film is a relatively inexpensive material on which large-grain (>2 mm) polycrystalline GaAs films can be formed. The GaAs epitaxial layers are grown by a simple close-spaced vapor transport (CSVT) technique using water vapor as a transport agent. A recrystallized Ge{sub 1{minus}x}Si{sub x} buffer layer between the GaAs epilayer and Silicon-Film substrate can facilitate growth of the GaAs. Selective epitaxy on patterned, oxide-masked substrates is effective in reducing thermal stress effects.

  20. Quantum effects in electron beam pumped GaAs

    SciTech Connect (OSTI)

    Yahia, M. E.; National Institute of Laser Enhanced Sciences , Cairo University ; Azzouz, I. M.; Moslem, W. M.

    2013-08-19

    Propagation of waves in nano-sized GaAs semiconductor induced by electron beam are investigated. A dispersion relation is derived by using quantum hydrodynamics equations including the electrons and holes quantum recoil effects, exchange-correlation potentials, and degenerate pressures. It is found that the propagating modes are instable and strongly depend on the electron beam parameters, as well as the quantum recoil effects and degenerate pressures. The instability region shrinks with the increase of the semiconductor number density. The instability arises because of the energetic electron beam produces electron-hole pairs, which do not keep in phase with the electrostatic potential arising from the pair plasma.

  1. Sulfur-mediated palladium catalyst immobilized on a GaAs surface

    SciTech Connect (OSTI)

    Shimoda, M. [Surface Physics and Structure Unit, Surface Physics Group, National Institute for Materials Science, 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Konishi, T. [Anan National College of Technology, 265 Aoki, Minobayashi-cho, Anan, Tokushima 774-0017 (Japan); Nishiwaki, N. [School of Environmental and Engineering, Kochi University of Technology, Tosayamada, Kami, Kochi 782-8502 (Japan); Yamashita, Y.; Yoshikawa, H. [Synchrotron X-ray Station at SPring-8, National Institute for Materials Science, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan)

    2012-06-15

    We present a hard x-ray photoelectron spectroscopy study on the preparation process of palladium catalyst immobilized on an S-terminated GaAs(100) surface. It is revealed that Pd(II) species are reduced on the GaAs surface and yield Pd nanoparticles during the process of Pd immobilization and the subsequent heat treatment. A comparison with the results on GaAs without S-termination suggests that the reduction of Pd is promoted by hydroxy groups during the Pd immobilization and by S during the heat treatment.

  2. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J.; Chen, You-Xian

    2002-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  3. (Polyfluoroaryl) fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J.; Chen, You-Xian

    2001-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interfere in the ethylene polymerization process, while affecting the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  4. Hydrogenation of palladium rich compounds of aluminium, gallium and indium

    SciTech Connect (OSTI)

    Kohlmann, H.

    2010-02-15

    Palladium rich intermetallic compounds of aluminium, gallium and indium have been studied before and after hydrogenation by powder X-ray diffraction and during hydrogenation by in situ thermal analysis (DSC) at hydrogen gas pressures up to 39 MPa and temperatures up to 700 K. Very weak DSC signals and small unit cell increases of below 1% for AlPd{sub 2}, AlPd{sub 3}, GaPd{sub 2}, Ga{sub 5}Pd{sub 13}, In{sub 3}Pd{sub 5}, and InPd{sub 2} suggest negligible hydrogen uptake. In contrast, for both tetragonal modifications of InPd{sub 3} (ZrAl{sub 3} and TiAl{sub 3} type), heating to 523 K at 2 MPa hydrogen pressure leads to a rearrangement of the intermetallic structure to a cubic AuCu{sub 3} type with an increase in unit cell volume per formula unit by 3.6-3.9%. Gravimetric analysis suggests a composition InPd{sub 3}H{sub a}pprox{sub 0.8} for the hydrogenation product. Very similar behaviour is found for the deuteration of InPd{sub 3}. - Graphical abstract: In situ differential scanning calorimetry of the hydrogenation of tetragonal InPd{sub 3} (ZrAl{sub 3} type) at 1.3 MPa hydrogen pressure.

  5. Spin-phonon coupling in scandium doped gallium ferrite

    SciTech Connect (OSTI)

    Chakraborty, Keka R. E-mail: smyusuf@barc.gov.in; Mukadam, M. D.; Basu, S.; Yusuf, S. M. E-mail: smyusuf@barc.gov.in; Paul, Barnita; Roy, Anushree; Grover, Vinita; Tyagi, A. K.

    2015-03-28

    We embarked on a study of Scandium (Sc) doped (onto Ga site) gallium ferrite (GaFeO{sub 3}) and found remarkable magnetic properties. In both doped as well as parent compounds, there were three types of Fe{sup 3+} ions (depending on the symmetry) with the structure conforming to space group Pna2{sub 1} (Sp. Grp. No. 33) below room temperature down to 5?K. We also found that all Fe{sup 3+} ions occupy octahedral sites, and carry high spin moment. For the higher Sc substituted sample (Ga{sub 1?x}Sc{sub x}FeO{sub 3}: x?=?0.3), a canted magnetic ordered state is found. Spin-phonon coupling below Nel temperature was observed in doped compounds. Our results indicated that Sc doping in octahedral site modifies spin-phonon interactions of the parent compound. The spin-phonon coupling strength was estimated for the first time in these Sc substituted compounds.

  6. Optical properties and plasmonic response of silver-gallium nanostructures

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lereu, Aude; Lemarchand, F.; Zerrad, M.; Yazdanpanah, M.; Passian, Ali

    2015-02-12

    Silver and gallium form an alloy Ag2Ga via a room temperature spontaneous self-assembly that exhibits remarkable mechanical and electrical properties [1] suitable for nanoscale measurements [2]. However, whether photon excitation of plasmons in this emerging nanomaterial is retained or not has not been established. Here, we present a thin lm formation of Ag2Ga via a spreading- reactive process of liquid Ga on an Ag lm and a characterization of its dielectric function (E) = 1(E) - i 2(E) in the photon energy range 1.42 eV E <4.2 eV. It is observed that while the plasmon damping increases, near an energymore » of 3.4 eV, the real part of exhibits a crossing with respect to that of Ag. Furthermore, the impact of new plasmon supporting materials [3] is discussed and in order to enable further applications in plasmonics, the possibility of photon excitation of surface plasmons in Ag2Ga is studied.« less

  7. GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment

    SciTech Connect (OSTI)

    Allwood, D.A.; Klipstein, P.C.; Mason, N.J.; Nicholas, R.J.; Walker, P.J.

    2000-01-01

    The real and imaginary components of the GaAs refractive index at temperatures between 20--700 C have been obtained. Measurements were made by comparing the variable angle reflectivity of p-polarized and s-polarized 633 nm wavelength light from a deoxidized GaAs surface. By using these temperature-dependent optical constants for GaAs, modeling has allowed the behavior of surface photoabsorption (SPA) signals with temperature and oxide layers present to be predicted for different angles of incidence. The experimentally observed SPA signals during deoxidization of GaAs show strong qualitative agreement with these calculations at each of the angles of incidence considered. The measurement of data and application to modeling provides a platform for the measurement of temperature-dependent optical data for other III-V materials and for the investigation of deoxidation mechanisms.

  8. Review of using gallium nitride for ionizing radiation detection

    SciTech Connect (OSTI)

    Wang, Jinghui; Mulligan, Padhraic; Cao, Lei R.; Brillson, Leonard

    2015-09-15

    With the largest band gap energy of all commercial semiconductors, GaN has found wide application in the making of optoelectronic devices. It has also been used for photodetection such as solar blind imaging as well as ultraviolet and even X-ray detection. Unsurprisingly, the appreciable advantages of GaN over Si, amorphous silicon (a-Si:H), SiC, amorphous SiC (a-SiC), and GaAs, particularly for its radiation hardness, have drawn prompt attention from the physics, astronomy, and nuclear science and engineering communities alike, where semiconductors have traditionally been used for nuclear particle detection. Several investigations have established the usefulness of GaN for alpha detection, suggesting that when properly doped or coated with neutron sensitive materials, GaN could be turned into a neutron detection device. Work in this area is still early in its development, but GaN-based devices have already been shown to detect alpha particles, ultraviolet light, X-rays, electrons, and neutrons. Furthermore, the nuclear reaction presented by {sup 14}N(n,p){sup 14}C and various other threshold reactions indicates that GaN is intrinsically sensitive to neutrons. This review summarizes the state-of-the-art development of GaN detectors for detecting directly and indirectly ionizing radiation. Particular emphasis is given to GaN's radiation hardness under high-radiation fields.

  9. Deposition of metallic gallium on re-crystallized ceramic material during focused ion beam milling

    SciTech Connect (OSTI)

    Muoz-Tabares, J.A.; Reyes-Gasga, J.

    2013-12-15

    We report a new kind of artifact observed in the preparation of a TEM sample of zirconia by FIB, which consists in the deposition of metallic gallium nano-dots on the TEM sample surface. High resolution TEM images showed a microstructure of fine equiaxed grains of ? 5 nm, with some of them possessing two particular characteristics: high contrast and well-defined fast Fourier transform. These grains could not be identified as any phase of zirconia but it was possible to identify them as gallium crystals in the zone axis [110]. Based on HRTEM simulations, the possible orientations between zirconia substrate and deposited gallium are discussed in terms of lattice mismatch and oxygen affinity. - Highlights: We show a new type of artifact induced during preparation of TEM samples by FIB. Deposition of Ga occurs due to its high affinity for oxygen. Materials with small grain size (? 5 nm) could promote Ga deposition. Small grain size permits the elastic accommodation of deposited Ga.

  10. Synthesis, Structures, and Magnetic Properties of Rare-Earth Cobalt Arsenides, RCo2As2 (R = La, Ce, Pr, Nd)

    SciTech Connect (OSTI)

    Thompson, Corey; Tan, Xiaoyan; Kovnir, Kirill; Garlea, Vasile O; Shatruk, Michael

    2014-01-01

    Four rare-earth cobalt arsenides, RCo2As2 (R = La, Ce, Pr, Nd), were obtained by reactions of constituent elements in molten Bi. The use of Bi flux also allowed the growth of representative single crystals. All compounds are isostructural and belong to the ThCr2Si2 structure type (space group I4/mmm). The formation of Co vacancies is observed in all structures, while the structures of La- and Ce-containing compounds also show incorporation of minor Bi defects next to the R crystallographic site. Correspondingly, the general formula of these materials can be written as R1 xBixCo2 As2, with x/ = 0.03/0.1, 0.05/0.15, 0/0.2, and 0/0.3 for R = La, Ce, Pr, and Nd, respectively. All compounds exhibit high-temperature ferromagnetic ordering of Co magnetic moments in the range of 150-200 K. Electronic band structure calculations revealed a high peak in the density of states at the Fermi level, thus supporting the itinerant nature of magnetism in the Co sublattice. The magnetic ordering in the lanthanide sublattice takes place at lower temperatures, with the R moments aligning antiparallel to the Co moments to give a ferrimagnetic ground state. The measurements on oriented single crystals demonstrated significant magnetic anisotropy in the ferrimagnetic state, with the preferred moment alignment along the c axis of the tetragonal lattice. Neutron powder diffraction failed to reveal the structure of magnetically ordered states, but confirmed the presence of Co vacancies. X-ray absorption near-edge structure spectroscopy on Ce1.95Bi0.05Co1.85As2 showed the average oxidation state of Ce to be +3.06. Solid state NMR spectroscopy revealed a substantially reduced hyperfine field on the Co atoms in the vicinity of Bi defects.

  11. In vitro bio-functionality of gallium nitride sensors for radiation biophysics

    SciTech Connect (OSTI)

    Hofstetter, Markus; Howgate, John; Schmid, Martin; Schoell, Sebastian; Sachsenhauser, Matthias; Adiguezel, Denis; Stutzmann, Martin; Sharp, Ian D.; Thalhammer, Stefan

    2012-07-27

    Highlights: Black-Right-Pointing-Pointer Gallium nitride based sensors show promising characteristics to monitor cellular parameters. Black-Right-Pointing-Pointer Cell growth experiments reveal excellent biocompatibiltiy of the host GaN material. Black-Right-Pointing-Pointer We present a biofunctionality assay using ionizing radiation. Black-Right-Pointing-Pointer DNA repair is utilized to evaluate material induced alterations in the cellular behavior. Black-Right-Pointing-Pointer GaN shows no bio-functional influence on the cellular environment. -- Abstract: There is an increasing interest in the integration of hybrid bio-semiconductor systems for the non-invasive evaluation of physiological parameters. High quality gallium nitride and its alloys show promising characteristics to monitor cellular parameters. Nevertheless, such applications not only request appropriate sensing capabilities but also the biocompatibility and especially the biofunctionality of materials. Here we show extensive biocompatibility studies of gallium nitride and, for the first time, a biofunctionality assay using ionizing radiation. Analytical sensor devices are used in medical settings, as well as for cell- and tissue engineering. Within these fields, semiconductor devices have increasingly been applied for online biosensing on a cellular and tissue level. Integration of advanced materials such as gallium nitride into these systems has the potential to increase the range of applicability for a multitude of test devices and greatly enhance sensitivity and functionality. However, for such applications it is necessary to optimize cell-surface interactions and to verify the biocompatibility of the semiconductor. In this work, we present studies of mouse fibroblast cell activity grown on gallium nitride surfaces after applying external noxa. Cell-semiconductor hybrids were irradiated with X-rays at air kerma doses up to 250 mGy and the DNA repair dynamics, cell proliferation, and cell growth

  12. Results of the Gallium-Clad Phase 3 and Phase 4 tasks (canceled prior to completion)

    SciTech Connect (OSTI)

    Morris, R.N.

    1998-08-01

    This report summarizes the results of the Gallium-Clad interactions Phase 3 and 4 tasks. Both tasks were to involve examining the out-of-pile stability of residual gallium in short fuel rods with an imposed thermal gradient. The thermal environment was to be created by an electrical heater in the center of the fuel rod and coolant flow on the rod outer cladding. Both tasks were canceled due to difficulties with fuel pellet fabrication, delays in the preparation of the test apparatus, and changes in the Fissile Materials Disposition program budget.

  13. Bilayer Graphene Gets a Bandgap

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    nanoelectronics. This is a narrower bandgap than common semiconductors like silicon or gallium arsenide, and it could enable new kinds of optoelectronic devices for generating,...

  14. The role of screening of the electron-phonon interaction in relaxation of photoexcited electron-hole plasma in semiconductors

    SciTech Connect (OSTI)

    Kumekov, S. E.

    2008-08-15

    The role of screening of the interaction of the electron-hole plasma with optical phonons is analytically evaluated by the example of gallium arsenide.

  15. GaAs quantum dot solar cell under concentrated radiation

    SciTech Connect (OSTI)

    Sablon, K.; Little, J. W.; Hier, H.; Li, Y.; Mitin, V.; Vagidov, N.; Sergeev, A.

    2015-08-17

    Effects of concentrated solar radiation on photovoltaic performance are investigated in well-developed GaAs quantum dot (QD) solar cells with 1-Sun efficiencies of 18%–19%. In these devices, the conversion processes are enhanced by nanoscale potential barriers and/or AlGaAs atomically thin barriers around QDs, which prevent photoelectron capture to QDs. Under concentrated radiation, the short circuit current increases proportionally to the concentration and the open circuit voltage shows the logarithmic increase. In the range up to hundred Suns, the contributions of QDs to the photocurrent are proportional to the light concentration. The ideality factors of 1.1–1.3 found from the V{sub OC}-Sun characteristics demonstrate effective suppression of recombination processes in barrier-separated QDs. The conversion efficiency shows the wide maximum in the range of 40–90 Suns and reaches 21.6%. Detailed analysis of I-V-Sun characteristics shows that at low intensities, the series resistance decreases inversely proportional to the concentration and, at ∼40 Suns, reaches the plateau determined mainly by the front contact resistance. Improvement of contact resistance would increase efficiency to above 24% at thousand Suns.

  16. NREL preprints for the 23rd IEEE Photovoltaic Specialists Conference

    SciTech Connect (OSTI)

    Fitzgerald, M.

    1993-05-01

    Topics covered include various aspects of solar cell fabrication and performance. Aluminium-gallium arsenides, cadmium telluride, amorphous silicon, and copper-indium-gallium selenides are all characterized in their applicability in solar cells.

  17. GaAs Blocked-Impurity-Band Detectors for Far-Infrared Astronomy

    SciTech Connect (OSTI)

    Cardozo, Benjamin Lewin

    2004-12-21

    High-purity and doped GaAs films have been grown by Liquid-phase epitaxy (LPE) for development of a blocked impurity band (BIB) detector for far-infrared radiation. The film growth process developed has resulted in the capability to grow GaAs with a net active impurity concentration below 1 x 10{sup 13} cm{sup -3}, ideal for the blocking layer of the BIB detector. The growth of n-type LPE GaAs films with donor concentrations below the metal-insulator transition, as required for the absorbing layer of a BIB detector, has been achieved. The control of the donor concentration, however, was found to be insufficient for detector production. The growth by LPE of a high-purity film onto a commercially grown vapor-phase epitaxial (VPE) n-type GaAs doped absorbing layer resulted in a BIB device that showed a significant reduction in the low-temperature dark current compared to the absorbing layer only. Extended optical response was not detected, most likely due to the high compensation of the commercially grown GaAs absorbing layer, which restricts the depletion width of the device.

  18. Buffer layer between a planar optical concentrator and a solar cell

    SciTech Connect (OSTI)

    Solano, Manuel E.; Barber, Greg D.; Lakhtakia, Akhlesh; Faryad, Muhammad; Monk, Peter B.; Mallouk, Thomas E.

    2015-09-15

    The effect of inserting a buffer layer between a periodically multilayered isotropic dielectric (PMLID) material acting as a planar optical concentrator and a photovoltaic solar cell was theoretically investigated. The substitution of the photovoltaic material by a cheaper dielectric material in a large area of the structure could reduce the fabrication costs without significantly reducing the efficiency of the solar cell. Both crystalline silicon (c-Si) and gallium arsenide (GaAs) were considered as the photovoltaic material. We found that the buffer layer can act as an antireflection coating at the interface of the PMLID and the photovoltaic materials, and the structure increases the spectrally averaged electron-hole pair density by 36% for c-Si and 38% for GaAs compared to the structure without buffer layer. Numerical evidence indicates that the optimal structure is robust with respect to small changes in the grating profile.

  19. Comparison between experimental and theoretical determination of the local structure of the GaAs{sub 1-y}N{sub y} dilute nitride alloy

    SciTech Connect (OSTI)

    Ciatto, Gianluca; D'Acapito, Francesco; Sanna, Simone; Fiorentini, Vincenzo; Polimeni, Antonio; Capizzi, Mario; Mobilio, Settimio; Boscherini, Federico

    2005-03-15

    We present a combined experimental and theoretical study of the local structure of the GaAs{sub 1-y}N{sub y} dilute nitride alloy. Experimental results obtained by x-ray absorption spectroscopy have been compared with first-principles density-functional supercell calculations and with the predictions of three different valence force field models. Both experiments and calculations find that inclusion of N induces static disorder in the Ga-As bond length distribution. An increase of the Ga-As bond length upon N incorporation in gallium arsenide has been observed; this is due to the competing effects of the decrease of the free lattice parameter and the tensile strain due to pseudomorphic growth. The different theoretical calculations reproduce more or less accurately this bond length expansion; we discuss the performance of the different valence force field models in predicting the measured bond lengths.

  20. High-efficiency solar cell and method for fabrication

    DOE Patents [OSTI]

    Hou, H.Q.; Reinhardt, K.C.

    1999-08-31

    A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD). 4 figs.

  1. High-efficiency solar cell and method for fabrication

    DOE Patents [OSTI]

    Hou, Hong Q.; Reinhardt, Kitt C.

    1999-01-01

    A high-efficiency 3- or 4-junction solar cell is disclosed with a theoretical AM0 energy conversion efficiency of about 40%. The solar cell includes p-n junctions formed from indium gallium arsenide nitride (InGaAsN), gallium arsenide (GaAs) and indium gallium aluminum phosphide (InGaAlP) separated by n-p tunnel junctions. An optional germanium (Ge) p-n junction can be formed in the substrate upon which the other p-n junctions are grown. The bandgap energies for each p-n junction are tailored to provide substantially equal short-circuit currents for each p-n junction, thereby eliminating current bottlenecks and improving the overall energy conversion efficiency of the solar cell. Additionally, the use of an InGaAsN p-n junction overcomes super-bandgap energy losses that are present in conventional multi-junction solar cells. A method is also disclosed for fabricating the high-efficiency 3- or 4-junction solar cell by metal-organic chemical vapor deposition (MOCVD).

  2. Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Lu, Zhenyu; Chen, Pingping E-mail: luwei@mail.sitp.ac.cn; Shi, Suixing; Yao, Luchi; Zhou, Xiaohao; Lu, Wei E-mail: luwei@mail.sitp.ac.cn; Zhang, Zhi; Zhou, Chen; Zou, Jin

    2014-10-20

    In this work, the crystal structure of GaAs nanowires grown by molecular beam epitaxy has been tailored only by bismuth without changing the growth temperature and V/III flux ratio. The introduction of bismuth can lead to the formation of zinc-blende GaAs nanowires, while the removal of bismuth changes the structure into a 4H polytypism before it turns back to the wurtzite phase eventually. The theoretical calculation shows that it is the steadiest for bismuth to adsorb on the GaAs(111){sub B} surface compared to the liquid gold catalyst surface and the interface between the gold catalyst droplet and the nanowire, and these adsorbed bismuth could decrease the diffusion length of adsorbed Ga and hence the supersaturation of Ga in the gold catalyst droplet.

  3. Zinc blende GaAs films grown on wurtzite GaN/sapphire templates

    SciTech Connect (OSTI)

    Chaldyshev, V.V.; Nielsen, B.; Mendez, E.E.; Musikhin, Yu.G.; Bert, N.A.; Ma, Zh.; Holden, Todd

    2005-03-28

    1-{mu}m-thick zinc-blende GaAs (111) films were grown by molecular-beam epitaxy on wurtzite GaN/sapphire (0001) templates. In spite of a {approx}20% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesion and their surface had a larger mirror-like area with an average surface roughness of 10 nm. Transmission electron microscopy revealed a flat and abrupt epitaxial GaAs/GaN interface with some nanocavities and a large number of dislocations. Reasonably good crystalline quality of the GaAs films was confirmed by Raman characterization. Spectroscopic ellipsometry showed sharp interference fringes and characteristic parameters in the range of 0.75-5.3 eV. Photoluminescence study revealed extended band tails and dominance of non-radiative carrier recombination.

  4. MOCVD growth of GaAs solar cells on silicon substrates

    SciTech Connect (OSTI)

    Vernon, S.M.; Haven, V.E.; Geoffroy, L.M.; Sanfacon, M.M.; Mastrovito, A.L. )

    1992-12-01

    This paper reports advances in the development of solar cells made from GaAs-on-Si structures prepared by metalorganic chemical vapor deposition (MOCVD). The use of concentrator cells, operating at [similar to]200 suns, has led to the efficiency achievements of 21.3% (AM1.5D) for a GaAs-on-Si solar cell, and 27.6 (AM1.5D) for a homoepitaxial GaAs cell. The development of epitaxial multilayer dielectric mirrors (Bragg reflectors), as back-surface reflectors in thin-film GaAs cells, on both Si and GaAs substrates, is shown to lead to modest efficiency increases, over that of conventional designs.

  5. Numerical analysis for high-efficiency GaAs solar cells fabricated on Si substrates

    SciTech Connect (OSTI)

    Yamaguchi, M.; Amano, C.; Itoh, Y.

    1989-07-15

    This paper describes some recent developments in GaAs thin-film solar cells fabricated on Si substrates by metalorganic chemical vapor deposition and numerically analyzes them.GaAs solar cells with efficiency of more than 18% are successfully fabricated on Si substrates by reducing the dislocation density. Photovoltaic properties of GaAs/Si cells are analyzed by considering the effect of nonuniform dislocation distribution on recombination properties of GaAs thin films on Si substrates. Numerical analysis shows that the effect of majority-carrier trapping must be considered. High efficiency GaAs solar cells with total-area efficiency of over 20% on Si substrates can be realized if dislocation density can be reduced to less than 5/times/10/sup 5/ cm/sup /minus/2/.

  6. Efficiency considerations for polycrystalline GaAs thin-film solar cells

    SciTech Connect (OSTI)

    Yamaguchi, M.; Itoh, Y.

    1986-07-01

    The effect of grain boundaries upon the efficiency of polycrystalline GaAs thin-film solar cells is analyzed. Solar-cell properties are calculated on a simple model where grain boundaries act as recombination centers to reduce the minority-carrier diffusion length in the solar cell's active layer and increase the space-charge layer recombination current. An effective diffusion length is expressed in terms of grain size, allowing the calculation of short-circuit current density and open-circuit voltage. Excellent agreement is obtained between theory and experiment. The fabrication of thin-film GaAs solar cells with an efficiency greater than 18% appears to be possible if the grain size in the thin-film GaAs layer with thickness of 3 ..mu..m is larger than 1000 ..mu..m.

  7. Frequency-tunable continuous-wave terahertz sources based on GaAs plasmonic photomixers

    SciTech Connect (OSTI)

    Yang, Shang-Hua; Jarrahi, Mona

    2015-09-28

    We present frequency-tunable, continuous-wave terahertz sources based on GaAs plasmonic photomixers, which offer high terahertz radiation power levels at 50% radiation duty cycle. The use of plasmonic contact electrodes enhances photomixer quantum efficiency while maintaining its ultrafast operation by concentrating a large number of photocarriers in close proximity to the device contact electrodes. Additionally, the relatively high thermal conductivity and high resistivity of GaAs allow operation under high optical pump power levels and long duty cycles without reaching the thermal breakdown limit of the photomixer. We experimentally demonstrate continuous-wave terahertz radiation with a radiation frequency tuning range of more than 2 THz and a record-high radiation power of 17 μW at 1 THz through plasmonic photomixers fabricated on a low temperature grown GaAs substrate at 50% radiation duty cycle.

  8. Second harmonic generation in photonic crystal cavities in (111)-oriented GaAs

    SciTech Connect (OSTI)

    Buckley, Sonia Radulaski, Marina; Vučković, Jelena; Biermann, Klaus

    2013-11-18

    We demonstrate second harmonic generation at telecommunications wavelengths in photonic crystal cavities in (111)-oriented GaAs. We fabricate 30 photonic crystal structures in both (111)- and (100)-oriented GaAs and observe an increase in generated second harmonic power in the (111) orientation, with the mean power increased by a factor of 3, although there is a large scatter in the measured values. We discuss possible reasons for this increase, in particular, the reduced two photon absorption for transverse electric modes in (111) orientation, as well as a potential increase due to improved mode overlap.

  9. Sandia Demonstrated First-Time, Single-Mode Lasing in Gallium-Nitride

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nanowire Lasers Demonstrated First-Time, Single-Mode Lasing in Gallium-Nitride Nanowire Lasers - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization

  10. Gallium hole traps in irradiated KTiOPO{sub 4}:Ga crystals

    SciTech Connect (OSTI)

    Grachev, V.; Meyer, M.; Malovichko, G.; Hunt, A. W.

    2014-12-07

    Nominally pure and gallium doped single crystals of potassium titanyl phosphate (KTiOPO{sub 4}) have been studied by Electron Paramagnetic Resonance at low temperatures before and after irradiation. Irradiation with 20?MeV electrons performed at room temperature and liquid nitrogen temperature caused an appearance of electrons and holes. Gallium impurities act as hole traps in KTiOPO{sub 4} creating Ga{sup 4+} centers. Two different Ga{sup 4+} centers were observed, Ga1 and Ga2. The Ga1 centers are dominant in Ga-doped samples. For the Ga1 center, a superhyperfine structure with one nucleus with nuclear spin was registered and attributed to the interaction of gallium electrons with a phosphorus nucleus or proton in its surrounding. In both Ga1 and Ga2 centers, Ga{sup 4+} ions substitute for Ti{sup 4+} ions, but with a preference to one of two electrically distinct crystallographic positions (site selective substitution). The Ga doping eliminates one of the shortcomings of KTP crystalsionic conductivity of bulk crystals. However, this does not improve significantly the resistance of the crystals to electron and ?-radiation.

  11. On the cascade capture of electrons at donors in GaAs quantum wells

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.

    2015-09-15

    The impact parameter for the cascade capture of electrons at a charged donor in a GaAs quantum well is calculated. A simple approximate analytical expression for the impact parameter is suggested. The temperature dependence of the impact parameter for the case of electron scattering by the piezoelectric potential of acoustic phonons is determined.

  12. Electrophilic surface sites as precondition for the chemisorption of pyrrole on GaAs(001) surfaces

    SciTech Connect (OSTI)

    Bruhn, Thomas; Fimland, Bjørn-Ove; Vogt, Patrick

    2015-03-14

    We report how the presence of electrophilic surface sites influences the adsorption mechanism of pyrrole on GaAs(001) surfaces. For this purpose, we have investigated the adsorption behavior of pyrrole on different GaAs(001) reconstructions with different stoichiometries and thus different surface chemistries. The interfaces were characterized by x-ray photoelectron spectroscopy, scanning tunneling microscopy, and by reflectance anisotropy spectroscopy in a spectral range between 1.5 and 5 eV. On the As-rich c(4 × 4) reconstruction that exhibits only nucleophilic surface sites, pyrrole was found to physisorb on the surface without any significant modification of the structural and electronic properties of the surface. On the Ga-rich GaAs(001)-(4 × 2)/(6 × 6) reconstructions which exhibit nucleophilic as well as electrophilic surface sites, pyrrole was found to form stable covalent bonds mainly to the electrophilic (charge deficient) Ga atoms of the surface. These results clearly demonstrate that the existence of electrophilic surface sites is a crucial precondition for the chemisorption of pyrrole on GaAs(001) surfaces.

  13. Non-Destructive Spent Fuel Characterization with Semi-Conducting Gallium Arsinde Neutron Imaging Arrays

    SciTech Connect (OSTI)

    Douglas S. McGregor; Holly K. Gersch; Jeffrey D. Sanders; John C. Lee; Mark D. Hammig; Michael R. Hartman; Yong Hong Yang; Raymond T. Klann; Brian Van Der Elzen; John T. Lindsay; Philip A. Simpson

    2002-01-30

    High resistivity bulk grown GaAs has been used to produce thermal neutron imaging devices for use in neutron radiography and characterizing burnup in spent fuel. The basic scheme utilizes a portable Sb/Be source for monoenergetic (24 keV) neutron radiation source coupled to an Fe filter with a radiation hard B-coated pixellated GaAs detector array as the primary neutron detector. The coated neutron detectors have been tested for efficiency and radiation hardness in order to determine their fitness for the harsh environments imposed by spent fuel. Theoretical and experimental results are presented, showing detector radiation hardness, expected detection efficiency and the spatial resolution from such a scheme. A variety of advanced neutron detector designs have been explored, with experimental results achieving 13% thermal neutron detection efficiency while projecting the possibility of over 30% thermal neutron detection efficiency.

  14. (Polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of enhanced utility, uses thereof, and products based thereon

    DOE Patents [OSTI]

    Marks, Tobin J.; Chen, You-Xian

    2001-01-01

    The (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium are novel weakly coordinating anions which are are highly fluorinated. (Polyfluoroaryl)fluoroanions of one such type contain at least one ring substituent other than fluorine. These (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium have greater solubility in organic solvents, or have a coordinative ability essentially equal to or less than that of the corresponding (polyfluoroaryl)fluoroanion of aluminum, gallium, or indium in which the substituent is replaced by fluorine. Another type of new (polyfluoroaryl)fluoroanion of aluminum, gallium, and indium have 1-3 perfluorinated fused ring groups and 2-0 perfluorophenyl groups. When used as a cocatalyst in the formation of novel catalytic complexes with d- or f-block metal compounds having at least one leaving group such as a methyl group, these anions, because of their weak coordination to the metal center, do not interefere in the ethylene polymerization process, while affecting the the propylene process favorably, if highly isotactic polypropylene is desired. Thus, the (polyfluoroaryl)fluoroanions of aluminum, gallium, and indium of this invention are useful in various polymerization processes such as are described.

  15. Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

    SciTech Connect (OSTI)

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-09-27

    The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A toward [110] were characterized and discussed by using deep level transient spectroscopy (DLTS) and on the basis of temperature dependence of the junction capacitances (C{sub J}). In one hand, GaAsN films grown on GaAs 311B and GaAs 10A showed n-type and p-type conductivities, respectively although the similar and simultaneous growth conditions. This result is indeed in contrast to the common known effect of N concentration on the type of conductivity, since the surface 311B showed a significant improvement in the incorporation of N. Furthermore, the temperature dependence of C{sub J} has shown that GaAs 311B limits the formation of N-H defects. In the other hand, the energy states in the forbidden gap of GaAsN were obtained. Six electron traps, E1 to E6, were observed in the DLTS spectrum of GaAsN grown on GaAs 311B, with apparent activation energies of 0.02, 0.14, 0.16, 0.33, 0.48, and 0.74 eV below the bottom edge of the conduction band, respectively. In addition, four hole traps, H1 to H4, were observed in the DLTS spectrum of GaAsN grown on GaAs 10A, with energy depths of 0.13, 0.20, 0.39, and 0.52 eV above the valence band maximum of the alloy, respectively. Hence, the surface morphology of the GaAs substrate was found to play a key factor role in clarifying the electrical properties of GaAsN grown by CBE.

  16. Surface electronic structure of GaAs(110) studied by Auger photoelectron coincidence spectroscopy

    SciTech Connect (OSTI)

    Bartynski, R.A.; Garrison, K.; Jensen, E.; Hulbert, S.L.; Weinert, M.

    1990-12-31

    We have used Auger photoelectron coincidence spectroscopy to study the M{sub 4,5}VV Auger spectra of GaAs(110). Using this technique, the Ga and As spectra can be separated and studied independently. The lineshape of the As-M{sub 4,5}VV measured in coincidence with the As 3d photoemission line differs significantly from the conventional Auger spectrum. We attribute this to the surface electronic properties of the system. In addition, we have found that the ss-component of the As spectrum is more intense than expected based on calculations using atomic matrix elements. The Ga-M{sub 4,5}VV spectrum, of which only the pp-component is observed, agrees well with that expected from an independent electron model. A first principles electronic structure calculation of a 5-layer GaAs(110) slab has been performed to aid in the interpretation of the Auger spectra.

  17. Surface electronic structure of GaAs(110) studied by Auger photoelectron coincidence spectroscopy

    SciTech Connect (OSTI)

    Bartynski, R.A.; Garrison, K. ); Jensen, E. . Dept. of Physics); Hulbert, S.L.; Weinert, M. )

    1990-01-01

    We have used Auger photoelectron coincidence spectroscopy to study the M{sub 4,5}VV Auger spectra of GaAs(110). Using this technique, the Ga and As spectra can be separated and studied independently. The lineshape of the As-M{sub 4,5}VV measured in coincidence with the As 3d photoemission line differs significantly from the conventional Auger spectrum. We attribute this to the surface electronic properties of the system. In addition, we have found that the ss-component of the As spectrum is more intense than expected based on calculations using atomic matrix elements. The Ga-M{sub 4,5}VV spectrum, of which only the pp-component is observed, agrees well with that expected from an independent electron model. A first principles electronic structure calculation of a 5-layer GaAs(110) slab has been performed to aid in the interpretation of the Auger spectra.

  18. Epitaxial two-dimensional nitrogen atomic sheet in GaAs

    SciTech Connect (OSTI)

    Harada, Yukihiro Yamamoto, Masuki; Baba, Takeshi; Kita, Takashi

    2014-01-27

    We have grown an epitaxial two-dimensional nitrogen (N) atomic sheet in GaAs by using the site-controlled N δ-doping technique. We observed a change of the electronic states in N δ-doped GaAs from the isolated impurity centers to the delocalized impurity band at 1.49 eV with increasing N-doping density. According to the excitation-power- and temperature-dependent photoluminescence (PL) spectra, the emission related to localized levels below the impurity band edge was dominant at low excitation power and temperature, whereas the effects of the localized levels can be neglected by increasing the excitation power and temperature. Furthermore, a clear Landau shift of the PL-peak energy was observed at several Tesla in the Faraday configuration, in contrast to the case in the impurity limit.

  19. Growth and properties of crystalline barium oxide on the GaAs(100) substrate

    SciTech Connect (OSTI)

    Yasir, M.; Dahl, J.; Lng, J.; Tuominen, M.; Punkkinen, M. P. J.; Laukkanen, P. Kokko, K.; Kuzmin, M.; Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg 194021 ; Korpijrvi, V.-M.; Polojrvi, V.; Guina, M.

    2013-11-04

    Growing a crystalline oxide film on III-V semiconductor renders possible approaches to improve operation of electronics and optoelectronics heterostructures such as oxide/semiconductor junctions for transistors and window layers for solar cells. We demonstrate the growth of crystalline barium oxide (BaO) on GaAs(100) at low temperatures, even down to room temperature. Photoluminescence (PL) measurements reveal that the amount of interface defects is reduced for BaO/GaAs, compared to Al{sub 2}O{sub 3}/GaAs, suggesting that BaO is a useful buffer layer to passivate the surface of the III-V device material. PL and photoemission data show that the produced junction tolerates the post heating around 600?C.

  20. The Morphology and Microstructure of Thin-Film GaAs on Mo Substrates

    SciTech Connect (OSTI)

    Jones, K. M.; Al-Jassim, M. M.; Hasoon, F. S.; Venkatasubramanian, R.

    1999-04-26

    The growth of GaAs thin films on Molybdenum foils was investigated in an attempt to find a low-cost substrate for GaAs. The films were grown by metalorganic chemical vapor deposition (MOCVD). The film thickness was in the 2-4{micro}m range, while the deposition temperature was in the 650-825 C range. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to investigate the film morphology and microstructure, respectively. The film morphology in general, and the grain size in particular, were found to be strongly dependent on the growth temperature. However, the defect structure observed in these films was relatively insensitive to the growth conditions.

  1. Patterned Exfoliation of GaAs Based on Masked Helium Implantation and Subsequent Rapid Thermal Annealing

    SciTech Connect (OSTI)

    Woo, H. J.; Choi, H. W.; Kim, G. D.; Hong, W.; Kim, J. K.

    2009-03-10

    A method of patterning single crystal GaAs based on ion implantation induced selective area exfoliation is suggested. Samples were implanted with 200-500 keV helium ions to a fluence range of 2-4x10{sup 16} He{sup +}/cm{sup 2} at room temperature through masks of Ni mesh (40 {mu}m opening) or stainless steel wire (50 {mu}m in diameter), and subsequent rapid thermal annealing at 350-500{open_square} resulted in expulsion of ion beam exposed material. The influences of ion energy, ion fluence, implantation temperature, subsequent annealing conditions (temperature and ramp rate), and mask pattern and its orientation with GaAs lattice on the patterned exfoliation were examined.

  2. Intermediate band solar cell simulation use InAs quantum dot in GaAs

    SciTech Connect (OSTI)

    Hendra P, I. B. Rahayu, F.; Sahdan, M. F.; Darma, Y.

    2015-04-16

    Intermediate band solar cell (IBSC) has become a new approach in increasing solar cell efficiency significantly. One way to create intermediate band is by proposing quantum dots (QD) technology. One of the important aspects in utilizing IBSC is the absorption of light. In this work we simulated the influence of QD arrangement in order to increase absorption coefficient and solar cell efficiency. We also simulated the influence of QD size to capture a wider light spectrum. We present a simple calculation method with low computing power demand. Results show that the increasing in quantum dot size can increase in capturing wider spectrum of light. Arrangement InAs QD in bulk material GaAs can capture wider spectrum of light and increase the absorption coefficient. The arrangement InAs QD 2 nm in GaAs bulk can increase solar cell efficiency up to 49.68%.

  3. Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

    SciTech Connect (OSTI)

    Yerino, Christopher D.; Jung, Daehwan; Lee, Minjoo Larry; Simmonds, Paul J.; Liang, Baolai; Huffaker, Diana L.; Schneider, Christian; Unsleber, Sebastian; Vo, Minh; Kamp, Martin; Hfling, Sven

    2014-12-22

    Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with a median value of 7.6??eV, due to the high symmetry of the (111) QDs. Tensile self-assembly thus offers a simple route to symmetric (111) QDs for entangled photon emitters.

  4. Controlled VLS Growth of Indium, Gallium and Tin Oxide Nanowiresvia Chemical Vapor Transport

    SciTech Connect (OSTI)

    Johnson, M.C.; Aloni, S.; McCready, D.E.; Bourret-Courchesne, E.D.

    2006-03-13

    We utilized a vapor-liquid-solid growth technique to synthesize indium oxide, gallium oxide, and tin oxide nanowires using chemical vapor transport with gold nanoparticles as the catalyst. Using identical growth parameters we were able to synthesize single crystal nanowires typically 40-100 nm diameter and more than 10-100 microns long. The products were characterized by means of XRD, SEM and HRTEM. All the wires were grown under the same growth conditions with growth rates inversely proportional to the source metal vapor pressure. Initial experiments show that different transparent oxide nanowires can be grown simultaneously on a single substrate with potential application for multi-component gas sensors.

  5. Modification of the crystal structure of gadolinium gallium garnet by helium ion irradiation

    SciTech Connect (OSTI)

    Ostafiychuk, B. K.; Yaremiy, I. P. Yaremiy, S. I.; Fedoriv, V. D.; Tomyn, U. O.; Umantsiv, M. M.; Fodchuk, I. M.; Kladko, V. P.

    2013-12-15

    The structure of gadolinium gallium garnet (GGG) single crystals before and after implantation by He{sup +} ions has been investigated using high-resolution X-ray diffraction methods and the generalized dynamic theory of X-ray scattering. The main types of growth defects in GGG single crystals and radiation-induced defects in the ion-implanted layer have been determined. It is established that the concentration of dislocation loops in the GGG surface layer modified by ion implantation increases and their radius decreases with an increase in the implantation dose.

  6. Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates

    SciTech Connect (OSTI)

    Cruz Hernandez, Esteban; Rojas Ramirez, Juan-Salvador; Contreras Hernandez, Rocio; Lopez Lopez, Maximo; Pulzara Mora, Alvaro; Mendez Garcia, Victor H.

    2007-02-09

    In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface.

  7. Static atomic displacements in a CdTe epitaxial layer on a GaAs substrate

    SciTech Connect (OSTI)

    Horning, R.D.; Staudenmann, J.

    1987-05-25

    A (001)CdTe epitaxial layer on a (001)GaAs substrate was studied by x-ray diffraction between 10 and 360 K. The CdTe growth took place at 380 /sup 0/C in a vertical gas flow metalorganic chemical vapor deposition reactor. Lattice parameters and integrated intensities of both the substrate and the epitaxial layer using the (00l) and (hhh) Bragg reflections reveal three important features. Firstly, the GaAs substrate does not exhibit severe strain after deposition and it is as perfect as a bulk GaAs. Secondly, the CdTe unit cell distorts tetragonally with a/sub perpendicular/>a/sub parallel/ below 300 K. The decay of the (00l) reflection intensities as a function of the temperature yields a Debye temperature of 142 K, the same value as for bulk CdTe. Thirdly, a temperature-dependent isotropic static displacement of the Cd and the Te atoms is introduced to account for the anomalous behavior of the (hhh) intensities.

  8. Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy

    SciTech Connect (OSTI)

    Wen, Lei; Gao, Fangliang; Li, Jingling; Guan, Yunfang; Wang, Wenliang; Zhou, Shizhong; Lin, Zhiting; Zhang, Xiaona; Zhang, Shuguang E-mail: mssgzhang@scut.edu.cn; Li, Guoqiang E-mail: mssgzhang@scut.edu.cn

    2014-11-21

    High-quality GaAs films have been epitaxially grown on Si (111) substrates by inserting an In{sub x}Ga{sub 1−x}As interlayer with proper In composition by molecular beam epitaxy (MBE). The effect of In{sub x}Ga{sub 1−x}As (0 < x < 0.2) interlayers on the properties of GaAs films grown on Si (111) substrates by MBE has been studied in detailed. Due to the high compressive strain between InGaAs and Si, InGaAs undergoes partial strain relaxation. Unstrained InGaAs has a larger lattice constant than GaAs. Therefore, a thin InGaAs layer with proper In composition may adopt a close lattice constant with that of GaAs, which is beneficial to the growth of high-quality GaAs epilayer on top. It is found that the proper In composition in In{sub x}Ga{sub 1−x}As interlayer of 10% is beneficial to obtaining high-quality GaAs films, which, on the one hand, greatly compensates the misfit stress between GaAs film and Si substrate, and on the other hand, suppresses the formation of multiple twin during the heteroepitaxial growth of GaAs film. However, when the In composition does not reach the proper value (∼10%), the In{sub x}Ga{sub 1−x}As adopts a lower strain relaxation and undergoes a lattice constant smaller than unstrained GaAs, and therefore introduces compressive stress to GaAs grown on top. When In composition exceeds the proper value, the In{sub x}Ga{sub 1−x}As will adopt a higher strain relaxation and undergoes a lattice constant larger than unstrained GaAs, and therefore introduces tensile stress to GaAs grown on top. As a result, In{sub x}Ga{sub 1−x}As interlayers with improper In composition introduces enlarged misfit stress to GaAs epilayers grown on top, and deteriorates the quality of GaAs epilayers. This work demonstrates a simple but effective method to grow high-quality GaAs epilayers and brings up a broad prospect for the application of GaAs-based optoelectronic devices on Si substrates.

  9. Final report on LDRD project 105967 : exploring the increase in GaAs photodiode responsivity with increased neutron fluence.

    SciTech Connect (OSTI)

    Blansett, Ethan L.; Geib, Kent Martin; Cich, Michael Joseph; Wrobel, Theodore Frank; Peake, Gregory Merwin; Fleming, Robert M.; Serkland, Darwin Keith; Wrobel, Diana L.

    2008-01-01

    A previous LDRD studying radiation hardened optoelectronic components for space-based applications led to the result that increased neutron irradiation from a fast-burst reactor caused increased responsivity in GaAs photodiodes up to a total fluence of 4.4 x 10{sup 13} neutrons/cm{sup 2} (1 MeV Eq., Si). The silicon photodiodes experienced significant degradation. Scientific literature shows that neutrons can both cause defects as well as potentially remove defects in an annealing-like process in GaAs. Though there has been some modeling that suggests how fabrication and radiation-induced defects can migrate to surfaces and interfaces in GaAs and lead to an ordering effect, it is important to consider how these processes affect the performance of devices, such as the basic GaAs p-i-n photodiode. In this LDRD, we manufactured GaAs photodiodes at the MESA facility, irradiated them with electrons and neutrons at the White Sands Missile Range Linac and Fast Burst Reactor, and performed measurements to show the effect of irradiation on dark current, responsivity and high-speed bandwidth.

  10. Coalescence of GaAs on (001) Si nano-trenches based on three-stage epitaxial lateral overgrowth

    SciTech Connect (OSTI)

    He, Yunrui; Wang, Jun Hu, Haiyang; Wang, Qi; Huang, Yongqing; Ren, Xiaomin

    2015-05-18

    The coalescence of selective area grown GaAs regions has been performed on patterned 1.8 μm GaAs buffer layer on Si via metal-organic chemical vapor deposition. We propose a promising method of three-stage epitaxial lateral overgrowth (ELO) to achieve uniform coalescence and flat surface. Rough surface caused by the coalescence of different growth fronts is smoothened by this method. Low root-mean-square surface roughness of 6.29 nm has been obtained on a 410-nm-thick coalesced ELO GaAs layer. Cross-sectional transmission electron microscope study shows that the coalescence of different growth fronts will induce some new dislocations. However, the coalescence-induced dislocations tend to mutually annihilate and only a small part of them reach the GaAs surface. High optical quality of the ELO GaAs layer has been confirmed by low temperature (77 K) photoluminescence measurements. This research promises a very large scale integration platform for the monolithic integration of GaAs-based device on Si.

  11. Short-range order and dynamics of atoms in liquid gallium

    SciTech Connect (OSTI)

    Mokshin, A. V. Khusnutdinoff, R. M.; Novikov, A. G.; Blagoveshchenskii, N. M.; Puchkov, A. V.

    2015-11-15

    The features of the microscopic structure, as well as one-particle and collective dynamics of liquid gallium in the temperature range from T = 313 to 1273 K, are studied on the p = 1.0 atm isobar. Detailed analysis of the data on diffraction of neutrons and X-rays, as well as the results of atomic dynamics simulation, lead to some conclusions about the structure. In particular, for preset conditions, gallium is in the equilibrium liquid phase showing no features of any stable local crystalline clusters. The pronounced asymmetry of the principle peak of the static structure factor and the characteristic “shoulder” in its right-hand part appearing at temperatures close to the melting point, which are clearly observed in the diffraction data, are due to the fact that the arrangement of the nearest neighbors of an arbitrary atom in the system is estimated statistically from the range of correlation length values and not by a single value as in the case of simple liquids. Compactly located dimers with a very short bond make a significant contribution to the statistics of nearest neighbors. The temperature dependence of the self-diffusion coefficient calculated from atomic dynamics simulation agrees well with the results obtained from experimental spectra of the incoherent scattering function. Interpolation of the temperature dependence of the self-diffusion coefficient on a logarithmic scale reveals two linear regions with a transition temperature of about 600 K. The spectra of the dynamic structure factor and spectral densities of the local current calculated by simulating the atomic dynamics indicate the existence of acoustic vibrations with longitudinal and transverse polarizations in liquid gallium, which is confirmed by experimental data on inelastic scattering of neutrons and X-rays. It is found that the vibrational density of states is completely reproduced by the generalized Debye model, which makes it possible to decompose the total vibrational motion into

  12. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

    SciTech Connect (OSTI)

    Dutta, P. Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V.; Zheng, N.; Ahrenkiel, P.; Martinez, J.

    2014-09-01

    We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ?10{sup 7?}cm{sup ?2}. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300?cm{sup 2}/V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

  13. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  14. Selective saturation of paramagnetic defects in electron- and neutron-irradiated GaAs

    SciTech Connect (OSTI)

    Goltzene, A.; Meyer, B.; Schwab, C.; Beall, R.B.; Newman, R.C.; Whitehouse, J.E.; Woodhead, J.

    1985-06-15

    A comparison of the electron paramagnetic resonance spectra obtained in fast neutron- and electron-irradiated GaAs crystals has confirmed the simultaneous presence of the quadruplet and singlet spectra, ascribed previously to As/sup 4 +//sub Ga/ and V/sup 2 -//sub Ga/ centers. Only in electron-irradiated material, however, are both signals separated by the selective microwave power saturation of the quadruplet. This apparent disparity is ascribed to a difference in the coupling between the two partners in the As/sup 4 +//sub Ga/-V/sup 2 -//sub Ga/ associated complexes.

  15. Optical properties of GaAs 2D hexagonal and cubic photonic crystal

    SciTech Connect (OSTI)

    Arab, F. Assali, A.; Grain, R.; Kanouni, F.

    2015-03-30

    In this paper we present our theoretical study of 2D hexagonal and cubic rods GaAs in air, with plan wave expansion (PWE) and finite difference time domain (FDTD) by using BandSOLVE and FullWAVE of Rsoft photonic CAD package. In order to investigate the effect of symmetry and radius, we performed calculations of the band structures for both TM and TE polarization, contour and electromagnetic propagation and transmission spectra. Our calculations show that the hexagonal structure gives a largest band gaps compare to cubic one for a same filling factor.

  16. Local mode spectroscopy of oxygen-implanted GaAs MBE layers

    SciTech Connect (OSTI)

    Alt, H.C.; Muessig, H.; Brugger, H.

    1996-12-31

    Defects introduced by oxygen implantation in silicon-doped GaAs layers grown by molecular beam epitaxy (MBE) have been investigated by Fourier transform infrared absorption spectroscopy at low temperatures. After rapid thermal annealing in the temperature range between 630 and 880 C a local mode is observed at 641 cm{sup {minus}1}. The line shows a shift with both the Si and O isotope ({sup 28}Si/{sup 29}Si and {sup 16}O/{sup 18}O, respectively) mass. Experimental evidence is presented that the silicon-oxygen defect giving rise to this line is responsible for the high-resistive behavior of the MBE layer.

  17. Twin superlattice-induced large surface recombination velocity in GaAs nanostructures

    SciTech Connect (OSTI)

    Sheng, Chunyang; Brown, Evan; Nakano, Aiichiro; Shimojo, Fuyuki

    2014-12-08

    Semiconductor nanowires (NWs) often contain a high density of twin defects that form a twin superlattice, but its effects on electronic properties are largely unknown. Here, nonadiabatic quantum molecular dynamics simulation shows unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective charge-recombination centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and provides microscopic understanding of the underlying surface-recombination processes.

  18. Comparison of binary collision approximation and molecular dynamics for displacement cascades in GaAs.

    SciTech Connect (OSTI)

    Foiles, Stephen Martin

    2011-10-01

    The predictions of binary collision approximation (BCA) and molecular dynamics (MD) simulations of displacement cascades in GaAs are compared. There are three issues addressed in this work. The first is the optimal choice of the effective displacement threshold to use in the BCA calculations to obtain the best agreement with MD results. Second, the spatial correlations of point defects are compared. This is related to the level of clustering that occurs for different types of radiation. Finally, the size and structure of amorphous zones seen in the MD simulations is summarized. BCA simulations are not able to predict the formation of amorphous material.

  19. Ultrafast magneto-photocurrents in GaAs: Separation of surface and bulk contributions

    SciTech Connect (OSTI)

    Schmidt, Christian B. Priyadarshi, Shekhar; Bieler, Mark; Tarasenko, Sergey A.

    2015-04-06

    We induce ultrafast magneto-photocurrents in a GaAs crystal employing interband excitation with femtosecond laser pulses at room temperature and non-invasively separate surface and bulk contributions to the overall current response. The separation between the different symmetry contributions is achieved by measuring the simultaneously emitted terahertz radiation for different sample orientations. Excitation intensity and photon energy dependences of the magneto-photocurrents for linearly and circularly polarized excitations reveal an involvement of different microscopic origins, one of which is the inverse spin Hall effect. Our experiments are important for a better understanding of the complex momentum-space carrier dynamics in magnetic fields.

  20. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  1. Perpendicularly magnetized {tau}-MnAl (001) thin films epitaxied on GaAs

    SciTech Connect (OSTI)

    Nie, S. H.; Zhu, L. J.; Lu, J.; Pan, D.; Wang, H. L.; Yu, X. Z.; Xiao, J. X.; Zhao, J. H.

    2013-04-15

    Perpendicularly magnetized {tau}-MnAl films have been epitaxied on GaAs (001) by molecular-beam epitaxy. Crystalline quality and magnetic properties of the samples were strongly dependent on growth temperature. The highest coercivity of 10.7 kOe, saturation magnetization of 361.4 emu/cm{sup 3}, perpendicular magnetic anisotropy constant of 13.65 Merg/cm{sup 3}, and magnetic energy product of 4.44 MGOe were achieved. These tunable magnetic properties make MnAl films valuable as excellent and cost-effective alternative for not only high density perpendicular magnetic recording storage and spintronics devices but also permanent magnets.

  2. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  3. Resonant second harmonic generation in a gallium nitride two-dimensional photonic crystal on silicon

    SciTech Connect (OSTI)

    Zeng, Y.; Roland, I.; Checoury, X.; Han, Z.; El Kurdi, M.; Sauvage, S.; Boucaud, P.; Gayral, B.; Brimont, C.; Guillet, T.; Mexis, M.; Semond, F.

    2015-02-23

    We demonstrate second harmonic generation in a gallium nitride photonic crystal cavity embedded in a two-dimensional free-standing photonic crystal platform on silicon. The photonic crystal nanocavity is optically pumped with a continuous-wave laser at telecom wavelengths in the transparency window of the nitride material. The harmonic generation is evidenced by the spectral range of the emitted signal, the quadratic power dependence vs. input power, and the spectral dependence of second harmonic signal. The harmonic emission pattern is correlated to the harmonic polarization generated by the second-order nonlinear susceptibilities χ{sub zxx}{sup (2)}, χ{sub zyy}{sup (2)} and the electric fields of the fundamental cavity mode.

  4. Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen

    SciTech Connect (OSTI)

    Sallis, S.; Williams, D. S.; Butler, K. T.; Walsh, A.; Quackenbush, N. F.; Junda, M.; Podraza, N. J.; Fischer, D. A.; Woicik, J. C.; White, B. E.; Piper, L. F. J.

    2014-06-09

    The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious implications for the development of p-type transparent amorphous oxide semiconductors. We report that the deep subgap feature in a-IGZO originates from local variations in the oxygen coordination and not from oxygen vacancies. This is shown by the positive correlation between oxygen composition and subgap intensity as observed with X-ray photoelectron spectroscopy. We also demonstrate that the subgap feature is not intrinsic to the amorphous phase because the deep subgap feature can be removed by low-temperature annealing in a reducing environment. Atomistic calculations of a-IGZO reveal that the subgap state originates from certain oxygen environments associated with the disorder. Specifically, the subgap states originate from oxygen environments with a lower coordination number and/or a larger metal-oxygen separation.

  5. Imaging the p-n junction in a gallium nitride nanowire with a scanning microwave microscope

    SciTech Connect (OSTI)

    Imtiaz, Atif; Wallis, Thomas M.; Brubaker, Matt D.; Blanchard, Paul T.; Bertness, Kris A.; Sanford, Norman A.; Kabos, Pavel; Weber, Joel C.; Coakley, Kevin J.

    2014-06-30

    We used a broadband, atomic-force-microscope-based, scanning microwave microscope (SMM) to probe the axial dependence of the charge depletion in a p-n junction within a gallium nitride nanowire (NW). SMM enables the visualization of the p-n junction location without the need to make patterned electrical contacts to the NW. Spatially resolved measurements of S{sub 11}{sup ?}, which is the derivative of the RF reflection coefficient S{sub 11} with respect to voltage, varied strongly when probing axially along the NW and across the p-n junction. The axial variation in S{sub 11}{sup ?}? effectively mapped the asymmetric depletion arising from the doping concentrations on either side of the junction. Furthermore, variation of the probe tip voltage altered the apparent extent of features associated with the p-n junction in S{sub 11}{sup ?} images.

  6. Rigid-body translation and bonding across l brace 110 r brace antiphase boundaries in GaAs

    SciTech Connect (OSTI)

    Rasmussen, D.R.; McKernan, S.; Carter, C.B. )

    1991-05-20

    A transmission-electron-microscope strong-beam technique is used to investigate the rigid-body translation across {l brace}110{r brace} antiphase boundaries in GaAs. The results show a translation in the {l angle}001{r angle} direction parallel to the plane of the boundary. The magnitude of the translation is determined, and the antisite bond lengths are discussed in terms of the tetrahedral radii of Ga and As. Given this knowledge of the rigid-body translation, the absolute polarity of a GaAs grain can be determined immediately from a bright-field image of the {l brace}110{r brace} antiphase boundary.

  7. Micro-cooler enhancements by barrier interface analysis

    SciTech Connect (OSTI)

    Stephen, A.; Dunn, G. M.; Glover, J.; Oxley, C. H.; Bajo, M. Montes; Kuball, M.; Cumming, D. R. S.; Khalid, A.

    2014-02-15

    A novel gallium arsenide (GaAs) based micro-cooler design, previously analysed both experimentally and by an analytical Heat Transfer (HT) model, has been simulated using a self-consistent Ensemble Monte Carlo (EMC) model for a more in depth analysis of the thermionic cooling in the device. The best fit to the experimental data was found and was used in conjunction with the HT model to estimate the cooler-contact resistance. The cooling results from EMC indicated that the cooling power of the device is highly dependent on the charge distribution across the leading interface. Alteration of this charge distribution via interface extensions on the nanometre scale has shown to produce significant changes in cooler performance.

  8. Bistability of self-modulation of the GaAs intrinsic stimulated picosecond radiation spectrum

    SciTech Connect (OSTI)

    Ageeva, N. N.; Bronevoi, I. L. Zabegaev, D. N.; Krivonosov, A. N.

    2013-08-15

    The bistability of self-modulation of the spectrum of the stimulated picosecond radiation that appears during picosecond optical pumping of GaAs is detected. The radiation is measured before it reaches the end faces of a sample. One set of equidistant modes occurs in the radiation spectrum at the radiation pulse front. A set of modes located at the center between the initial modes replaces the first set in the descending radiation branch. The intermode interval inside each set coincides with the calculated interval between the eigenmodes of the GaAs layer, which is an active cavity. The radiation rise time turns out to be an oscillating function of the photon energy. The spectrum evolution is self-consistent so that the time-integrated spectrum and the spectrum-integrated radiation pulse envelope have a smooth (without local singularities) shape. The revealed bistability explains the physical nature of the two radiation-induced states of population depletion between which subterahertz self-oscillations in the radiation field were detected earlier. The radiation spectrum self-modulation is assumed to be a variant of stimulated Raman scattering.

  9. GaAs buffer layer technique for vertical nanowire growth on Si substrate

    SciTech Connect (OSTI)

    Xu, Xiaoqing Parizi, Kokab B.; Huo, Yijie; Kang, Yangsen; Philip Wong, H.-S.; Li, Yang

    2014-02-24

    Gold catalyzed vapor-liquid-solid method is widely applied to IIIV nanowire (NW) growth on Si substrate. However, the easy oxidation of Si, possible Si contamination in the NWs, high defect density in the NWs, and high sensitivity of the NW morphology to growth conditions largely limit its controllability. In this work, we developed a buffer layer technique by introducing a GaAs thin film with predefined polarity as a template. It is found that samples grown on these buffer layers all have high vertical NW yields in general, due to the single-orientation of the buffer layers. Low temperature buffer with smoother surface leads to highest yield of vertical NWs, while high temperature (HT) buffer with better crystallinity results in perfect NW quality. The defect-free property we observed here is very promising for optoelectronic device applications based on GaAs NW. Moreover, the buffer layers can eliminate Si contamination by preventing Si-Au alloy formation and by increasing the thickness of the Si diffusion barrier, thus providing more flexibility to vertical NW growth. The buffer layer technique we demonstrated here could be easily extended to other III-V on Si system for electronic and photonic applications.

  10. Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

    SciTech Connect (OSTI)

    MAR,ALAN; LOUBRIEL,GUILLERMO M.; ZUTAVERN,FRED J.; O'MALLEY,MARTIN W.; HELGESON,WESLEY D.; BROWN,DARWIN JAMES; HJALMARSON,HAROLD P.; BACA,ALBERT G.; THORNTON,R.L.; DONALDSON,R.D.

    1999-12-17

    The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer that is very effective in the suppression of filament formation, alleviating current crowding. Damage-free operation is now possible with virtually infinite expected lifetime at much higher current levels than before. The inherent damage-free current capacity of the bulk GaAs itself depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage mechanism and the threshold for damage ({approx}40A) is not further improved beyond a dopant diffusion depth of about 2{micro}m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs, unlike a switch with conventional contacts. This paper will compare thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques will be contrasted in terms of the fabrication issues and device characteristics.

  11. Effect of catalyst diameter on vapour-liquid-solid growth of GaAs nanowires

    SciTech Connect (OSTI)

    O'Dowd, B. J. Shvets, I. V.; Wojtowicz, T.; Kolkovsky, V.; Wojciechowski, T.; Zgirski, M.; Rouvimov, S.; Liu, X.; Pimpinella, R.; Dobrowolska, M.; Furdyna, J.

    2014-08-14

    GaAs nanowires were grown on (111)B GaAs substrates using the vapour-liquid-solid mechanism. The Au/Pt nanodots used to catalyse wire growth were defined lithographically and had varying diameter and separation. An in-depth statistical analysis of the resulting nanowires, which had a cone-like shape, was carried out. This revealed that there were two categories of nanowire present, with differing height and tapering angle. The bimodal nature of wire shape was found to depend critically on the diameter of the Au-Ga droplet atop the nanowire. Transmission electron microscopy analysis also revealed that the density of stacking faults in the wires varied considerably between the two categories of wire. It is believed that the cause of the distinction in terms of shape and crystal structure is related to the contact angle between the droplet and the solid-liquid interface. The dependency of droplet diameter on contact angle is likely related to line-tension, which is a correction to Young's equation for the contact angle of a droplet upon a surface. The fact that contact angle may influence resulting wire structure and shape has important implications for the planning of growth conditions and the preparation of wires for use in proposed devices.

  12. Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells

    DOE Patents [OSTI]

    Bhattacharya, Raghu N.; Hasoon, Falah S.; Wiesner, Holm; Keane, James; Noufi, Rommel; Ramanathan, Kannan

    1999-02-16

    A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.

  13. Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon

    SciTech Connect (OSTI)

    Li, Qiang; Ng, Kar Wei; Lau, Kei May

    2015-02-16

    We report the use of highly ordered, dense, and regular arrays of in-plane GaAs nanowires as building blocks to produce antiphase-domain-free GaAs thin films on exact (001) silicon. High quality GaAs nanowires were grown on V-grooved Si (001) substrates using the selective aspect ratio trapping concept. The 4.1% lattice mismatch has been accommodated by the initial GaAs, a few nanometer-thick with high density stacking faults. The bulk of the GaAs wires exhibited smooth facets and a low defect density. An unusual defect trapping mechanism by a tiara-like structure formed by Si undercuts was discovered. As a result, we were able to grow large-area antiphase-domain-free GaAs thin films out of the nanowires without using SiO{sub 2} sidewalls for defect termination. Analysis from XRD ?-rocking curves yielded full-width-at-half-maximum values of 238 and 154?arc sec from 900 to 2000?nm GaAs thin films, respectively, indicating high crystalline quality. The growth scheme in this work offers a promising path towards integrated III-V electronic, photonic, or photovoltaic devices on large scale silicon platform.

  14. Electrical spin injection in modulation-doped GaAs from an in situ grown Fe/MgO layer

    SciTech Connect (OSTI)

    Shim, Seong Hoon; Kim, Hyung-jun; Koo, Hyun Cheol; Lee, Yun-Hi; Chang, Joonyeon

    2015-09-07

    We study spin accumulation in n-doped GaAs that were electrically injected from Fe via MgO using three-terminal Hanle measurement. The Fe/MgO/GaAs structures were prepared in a cluster molecular beam epitaxy that did not require the breaking of the vacuum. We found the crystal orientation relationship of epitaxial structures Fe[100]//MgO[110]//GaAs[110] without evident defects at the interface. Control of depletion width and interface resistance by means of modulation doping improves spin injection, leading to enhanced spin voltage (ΔV) of 6.3 mV at 10 K and 0.8 mV even at 400 K. The extracted spin lifetime and spin diffusion length of GaAs are 220 ps and 0.77 μm, respectively, at 200 K. MgO tunnel barrier grown in situ with modulation doping at the interface appears to be promising for spin injection into GaAs.

  15. Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth

    SciTech Connect (OSTI)

    Harmand, J.C.; Patriarche, G.; Pere-Laperne, N.; Merat-Combes, M-N.; Travers, L.; Glas, F.

    2005-11-14

    GaAs nanowires were grown by molecular-beam epitaxy on (111)B oriented surfaces, after the deposition of Au nanoparticles. Different growth durations and different growth terminations were tested. After the growth of the nanowires, the structure and the composition of the metallic particles were analyzed by transmission electron microscopy and energy dispersive x-ray spectroscopy. We identified three different metallic compounds: the hexagonal {beta}{sup '}Au{sub 7}Ga{sub 2} structure, the orthorhombic AuGa structure, and an almost pure Au face centered cubic structure. We explain how these different solid phases are related to the growth history of the samples. It is concluded that during the wire growth, the metallic particles are liquid, in agreement with the generally accepted vapor-liquid-solid mechanism. In addition, the analysis of the wire morphology indicates that Ga adatoms migrate along the wire sidewalls with a mean length of about 3 {mu}m.

  16. Evolution of superclusters and delocalized states in GaAs1–xNx

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Fluegel, B.; Alberi, K.; Beaton, D. A.; Crooker, S. A.; Ptak, A. J.; Mascarenhas, A.

    2012-11-21

    The evolution of individual nitrogen cluster bound states into an extended state infinite supercluster in dilute GaAs1–xNx was probed through temperature and intensity-dependent, time-resolved and magnetophotoluminescence (PL) measurements. Samples with compositions less than 0.23% N exhibit PL behavior that is consistent with emission from the extended states of the conduction band. Near a composition of 0.23% N, a discontinuity develops between the extended state PL peak energy and the photoluminescence excitation absorption edge. The existence of dual localized/delocalized state behavior near this composition signals the formation of an N supercluster just below the conduction band edge. The infinite supercluster ismore » fully developed by 0.32% N.« less

  17. Fano Resonance in GaAs 2D Photonic Crystal Nanocavities

    SciTech Connect (OSTI)

    Valentim, P. T.; Guimaraes, P.S. S.; Luxmoore, I. J.; Szymanski, D.; Whittaker, D. M.; Fox, A. M.; Skolnick, M. S.; Vasco, J. P.; Vinck-Posada, H.

    2011-12-23

    We report the results of polarization resolved reflectivity experiments in GaAs air-bridge photonic crystals with L3 cavities. We show that the fundamental L3 cavity mode changes, in a controlled way, from a Lorentzian symmetrical lineshape to an asymmetrical form when the linear polarization of the incident light is rotated in the plane of the crystal. The different lineshapes are well fitted by the Fano asymmetric equation, implying that a Fano resonance is present in the reflectivity. We use the scattering matrix method to model the Fano interference between a localized discrete state (the cavity fundamental mode) and a background of continuum states (the light reflected from the crystal slab in the vicinity of the cavity) with very good agreement with the experimental data.

  18. Narrow-line self-assembled GaAs quantum dots for plasmonics

    SciTech Connect (OSTI)

    Zhang, Hongyi; Huo, Yongheng; Schmidt, Oliver G.; Lindfors, Klas; Chen, Yonghai; Rastelli, Armando; Lippitz, Markus

    2015-03-09

    We demonstrate efficient coupling of excitons in near-surface GaAs quantum dots (QDs) to surface-plasmon polaritons. We observe distinct changes in the photoluminescence of the emitters as the distance between the QDs and the gold interface decreases. Based on an electric point-dipole model, we identify the surface plasmon launching rates for different QD-surface distances. While in conventional far-field experiments only a few percent of the emitted photons can be collected due to the high refractive index semiconductor substrate, already for distances around 30 nm the plasmon launching-rate becomes comparable to the emission rate into bulk photon modes, thus much larger than the photon collection rate. For even smaller distances, the degrading optical properties of the emitter counterweight the increasing coupling efficiency to plasmonic modes.

  19. Suitability of epitaxial GaAs for x-ray imaging

    SciTech Connect (OSTI)

    Sun, G.C.; Talbi, N.; Verdeil, C.; Bourgoin, J.C.

    2004-09-20

    Because the rate of indirect photon-electron conversion for scintillator materials coupled with arrays of photodiodes is at least 25 times smaller than the rate of direct conversion, we examine the conditions to be fulfilled by semiconductors undergoing such direct conversion to be applied to x-ray imaging. Bulk grown materials are not well suited to this application, because large defect concentrations give rise to strongly nonuniform electronic properties. We argue that only epitaxial layers are suitable for use as imaging devices and we illustrate our argument using the case of thick epitaxial GaAs layers. Detectors made with such layers exhibit a good energy resolution, a charge collection efficiency which approaches 1, linearity over more than three orders of amplitude, no afterglow (a response time shorter than 20 {mu}s), and no charge-induced polarization effects.

  20. Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction

    SciTech Connect (OSTI)

    Seyedi, M. A. Yao, M.; O'Brien, J.; Dapkus, P. D.; Wang, S. Y.; Nanostructured Energy Conversion Technology and Research , Advanced Studies Laboratories, University of California, Santa Cruz, California 95064, USA and NASA Ames Research Center, Moffett Field, California 94035

    2013-12-16

    We present experimental results on a GaAs/Indium-Tin-Oxide Schottky-like heterojunction photodetector based on a nanowire device geometry. By distributing the active detecting area over an array of nanowires, it is possible to achieve large area detection with low capacitance. Devices with bare GaAs and passivated AlGaAs/GaAs nanowires are fabricated to compare the responsivity with and without surface passivation. We are able to achieve responsivity of >0.5A/W and Signal-Noise-Ratio in excess of 7?dB for 2?V applied reverse bias with passivated nanowire devices. Capacitance-voltage measurement yields <5?nF/cm{sup 2}, which shows a strong possibility for high-speed applications with a broad area device.

  1. Epitaxial lift-off of quantum dot enhanced GaAs single junction solar cells

    SciTech Connect (OSTI)

    Bennett, Mitchell F.; Bittner, Zachary S.; Forbes, David V.; Hubbard, Seth M.; Rao Tatavarti, Sudersena; Wibowo, Andree; Pan, Noren; Chern, Kevin; Phillip Ahrenkiel, S.

    2013-11-18

    InAs/GaAs strain-balanced quantum dot (QD) n-i-p solar cells were fabricated by epitaxial lift-off (ELO), creating thin and flexible devices that exhibit an enhanced sub-GaAs bandgap current collection extending into the near infrared. Materials and optical analysis indicates that QD quality after ELO processing is preserved, which is supported by transmission electron microscopy images of the QD superlattice post-ELO. Spectral responsivity measurements depict a broadband resonant cavity enhancement past the GaAs bandedge, which is due to the thinning of the device. Integrated external quantum efficiency shows a QD contribution to the short circuit current density of 0.23?mA/cm{sup 2}.

  2. Efficiency calculations of thin-film GaAs solar cells on Si substrates

    SciTech Connect (OSTI)

    Yamaguchi, M.; Amano, C.

    1985-11-01

    Dislocation effect upon the efficiency of single-crystal thin-film AlGaAs-GaAs heteroface solar cells on Si substrates is analyzed. Solar-cell properties are calculated based on a simple model; in the model, dislocations act as recombination centers to reduce the minority-carrier diffusion length in each layer and increase the space-charge layer recombination current. Numerical analysis is also carried out to optimize thin-film AlGaAs-GaAs heteroface solar-cell structures. The fabrication of thin-film AlGaAs-GaAs heteroface solar cells with a practical efficiency larger than 18% on Si substrates appears possible if the dislocation density in the thin-film GaAs layer is less than 10/sup 6/ cm/sup -2/.

  3. Thin film GaAs solar cells on glass substrates by epitaxial liftoff

    SciTech Connect (OSTI)

    Lee, X.Y.; Goertemiller, M.; Boroditsky, M.; Ragan, R.; Yablonovitch, E.

    1997-02-01

    In this work, we describe the fabrication and operating characteristics of GaAs/AlGaAs thin film solar cells processed by the epitaxial liftoff (ELO) technique. This technique allows the transfer of these cells onto glass substrates. The performance of the lifted-off solar cell is demonstrated by means of electrical measurements under both dark and illuminated conditions. We have also optimized the light trapping conditions in this direct-gap material. The results show that good solar absorption is possible in active layers as thin as 0.32 {mu}m. In such a thin solar cell, the open circuit voltage would be enhanced. We believe that the combination of an epitaxial liftoff thin GaAs film, and nano-texturing can lead to record breaking performance. {copyright} {ital 1997 American Institute of Physics.}

  4. Spin coherence of the two-dimensional electron gas in a GaAs quantum well

    SciTech Connect (OSTI)

    Larionov, A. V.

    2015-01-15

    The coherent spin dynamics of the quasi-two-dimensional electron gas in a GaAs quantum well is experimentally investigated using the time-resolved spin Kerr effect in an optical cryostat with a split coil inducing magnetic fields of up to 6 T at a temperature of about 2 K. The electron spin dephasing times and degree of anisotropy of the spin relaxation of electrons are measured in zero magnetic field at different electron densities. The dependence of the spin-orbit splitting on the electron-gas density is established. In the integral quantum-Hall-effect mode, the unsteady behavior of the spin dephasing time of 2D electrons of the lower Landau spin sublevel near the odd occupation factor ν = 3 is found. The experimentally observed unsteady behavior of the spin dephasing time can be explained in terms of new-type cyclotron modes that occur in a liquid spin texture.

  5. GaAs micro-pyramids serving as optical micro-cavities

    SciTech Connect (OSTI)

    Karl, M.; Beck, T.; Li, S.; Hu, D. Z.; Schaadt, D. M.; Kalt, H.; Hetterich, M.

    2010-01-04

    An efficient light-matter coupling requires high-quality (Q) micro-cavities with small mode volume. We suggest GaAs micro-pyramids placed on top of AlAs/GaAs distributed Bragg reflectors to be promising candidates. The pyramids were fabricated by molecular-beam epitaxy, electron-beam lithography and a subsequent wet-chemical etching process using a sacrificial AlAs layer. Measured Q-factors of optical modes in single pyramids reach values up to 650. A finite-difference time-domain simulation assuming a simplified cone-shaped geometry suggests possible Q-factors up to 3600. To enhance the light confinement in the micro-pyramids we intend to overgrow the pyramidal facets with a Bragg mirror--results of preliminary tests are given.

  6. Revealing the preferred interlayer orientations and stackings of two-dimensional bilayer gallium selenide crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Xufan; Basile Carrasco, Leonardo A.; Yoon, Mina; Ma, Cheng; Puretzky, Alexander A.; Lee, Jaekwang; Idrobo Tapia, Juan Carlos; Chi, Miaofang; Rouleau, Christopher M.; Geohegan, David B.; et al

    2015-01-21

    Characterizing and controlling the interlayer orientations and stacking order of bilayer two-dimensional (2D) crystals and van der Waals (vdW) heterostructure is crucial to optimize their electrical and optoelectronic properties. The four polymorphs of layered gallium selenide (GaSe) that result from different layer stacking provide an ideal platform to study the stacking configurations in bilayer 2D crystals. Here, through a controllable vapor-phase deposition method we selectively grow bilayer GaSe crystals and investigate their two preferred 0° or 60° interlayer rotations. The commensurate stacking configurations (AA' and AB-stacking) in as-grown 2D bilayer GaSe crystals are clearly observed at the atomic scale andmore » the Ga-terminated edge structure are identified for the first time by using atomic-resolution scanning transmission electron microscopy (STEM). Theoretical analysis of the interlayer coupling energetics vs. interlayer rotation angle reveals that the experimentally-observed orientations are energetically preferred among the bilayer GaSe crystal polytypes. Here, the combined experimental and theoretical characterization of the GaSe bilayers afforded by these growth studies provide a pathway to reveal the atomistic relationships in interlayer orientations responsible for the electronic and optical properties of bilayer 2D crystals and vdW heterostructures.« less

  7. Revealing the preferred interlayer orientations and stackings of two-dimensional bilayer gallium selenide crystals

    SciTech Connect (OSTI)

    Li, Xufan; Basile Carrasco, Leonardo A.; Yoon, Mina; Ma, Cheng; Puretzky, Alexander A.; Lee, Jaekwang; Idrobo Tapia, Juan Carlos; Chi, Miaofang; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai

    2015-01-21

    Characterizing and controlling the interlayer orientations and stacking order of bilayer two-dimensional (2D) crystals and van der Waals (vdW) heterostructure is crucial to optimize their electrical and optoelectronic properties. The four polymorphs of layered gallium selenide (GaSe) that result from different layer stacking provide an ideal platform to study the stacking configurations in bilayer 2D crystals. Here, through a controllable vapor-phase deposition method we selectively grow bilayer GaSe crystals and investigate their two preferred 0° or 60° interlayer rotations. The commensurate stacking configurations (AA' and AB-stacking) in as-grown 2D bilayer GaSe crystals are clearly observed at the atomic scale and the Ga-terminated edge structure are identified for the first time by using atomic-resolution scanning transmission electron microscopy (STEM). Theoretical analysis of the interlayer coupling energetics vs. interlayer rotation angle reveals that the experimentally-observed orientations are energetically preferred among the bilayer GaSe crystal polytypes. Here, the combined experimental and theoretical characterization of the GaSe bilayers afforded by these growth studies provide a pathway to reveal the atomistic relationships in interlayer orientations responsible for the electronic and optical properties of bilayer 2D crystals and vdW heterostructures.

  8. Revealing the Preferred Interlayer Orientations and Stackings of Two-Dimensional Bilayer Gallium Selenide Crystals

    SciTech Connect (OSTI)

    Li, Xufan; Basile Carrasco, Leonardo A; Yoon, Mina; Ma, Cheng; Puretzky, Alexander A; Lee, Jaekwang; Idrobo Tapia, Juan Carlos; Chi, Miaofang; Rouleau, Christopher M; Geohegan, David B; Xiao, Kai

    2015-01-01

    Characterizing and controlling the interlayer orientations and stacking order of bilayer two-dimensional (2D) crystals and van der Waals (vdW) heterostructure is crucial to optimize their electrical and optoelectronic properties. The four polymorphs of layered gallium selenide (GaSe) that result from different layer stacking provide an ideal platform to study the stacking configurations in bilayer 2D crystals. Here, through a controllable vapor-phase deposition method we selectively grow bilayer GaSe crystals and investigate their two preferred 0 or 60 interlayer rotations. The commensurate stacking configurations (AA and AB-stacking) in as-grown 2D bilayer GaSe crystals are clearly observed at the atomic scale and the Ga-terminated edge structure are identified for the first time by using atomic-resolution scanning transmission electron microscopy (STEM). Theoretical analysis of the interlayer coupling energetics vs. interlayer rotation angle reveals that the experimentally-observed orientations are energetically preferred among the bilayer GaSe crystal polytypes. The combined experimental and theoretical characterization of the GaSe bilayers afforded by these growth studies provide a pathway to reveal the atomistic relationships in interlayer orientations responsible for the electronic and optical properties of bilayer 2D crystals and vdW heterostructures.

  9. Energy distribution of nonequilibrium electrons and optical phonons in GaAs under band-to-band pumping by intense short pulses of light

    SciTech Connect (OSTI)

    Altybaev, G. S.; Kumekov, S. E. Mahmudov, A. A.

    2009-03-15

    Deviation from the Fermi distribution of nonequilibrium electrons and distribution of 'hot' optical phonons in GaAs under band-to-band pumping by picosecond pulses of light are calculated.

  10. Simulation of quantum dots size and spacing effect for intermediate band solar cell application based on InAs quantum dots arrangement in GaAs

    SciTech Connect (OSTI)

    Hendra, P. I. B. Rahayu, F. Darma, Y.

    2014-03-24

    Intermediate band solar cell (IBSC) has become a promising technology in increasing solar cell efficiency. In this work we compare absorption coefficient profile between InAs quantum dots with GaAs bulk. We calculate the efficiency of GaAs bulk and GaAs doped with 2, 5, and 10 nm InAs quantum dot. Effective distances in quantum dot arrangement based on electron tunneling consideration were also calculated. We presented a simple calculation method with low computing power demand. Results showed that arrangement of quantum dot InAs in GaAs can increase solar cell efficiency from 23.9 % initially up to 60.4%. The effective distance between two quantum dots was found 2 nm in order to give adequate distance to prevent electron tunneling and wave functions overlap.

  11. Optimization of doubly Q-switched lasers with both an acousto-optic modulator and a GaAs saturable absorber

    SciTech Connect (OSTI)

    Li Dechun; Zhao Shengzhi; Li Guiqiu; Yang Kejian

    2007-08-20

    A doubly Q-switched laser with both an acousto-optic (AO) modulator and a GaAs saturable absorber can obtain a more symmetric and shorter pulse with high pulse peak power, which has been experimentally proved. The key parameters of an optimally coupled doubly Q-switched laser with both an AO modulator and a GaAs saturable absorber are determined, and a group of general curves are generated for what we believe is the first time, when the single-photon absorption (SPA) and two-photon absorption (TPA) processes of GaAs are combined, and the Gaussian spatial distributions of the intracavity photon density and the initial population-inversion density as well as the influence of the AO Q-switch are considered. These key parameters include the optimal normalized coupling parameter, the optimal normalized GaAs saturable absorber parameters, and the normalized parameters of the AO Q-switch, which can maximize the output energy. Meanwhile, the corresponding normalized energy, the normalized peak power, and the normalized pulse width are given. The curves clearly show the dependence of the optimal key parameters on the parameters of the gain medium, the GaAs saturable absorber,the AO Q-switch, and the resonator. Sample calculations for a diode-pumpedNd3+:YVO4 laser with both an AO modulator and a GaAs saturable absorber are presented to demonstrate the use of the curves and the relevant formulas.

  12. Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III–V photovoltaics

    SciTech Connect (OSTI)

    Ritenour, Andrew J.; Boucher, Jason W.; DeLancey, Robert; Greenaway, Ann L.; Aloni, Shaul; Boettcher, Shannon W.

    2014-09-01

    We report the use of a simple close-spaced vapor transport technique for the growth of high-quality epitaxial GaAs films using potentially inexpensive GaAs powders as precursors. The free carrier type and density (1016 to 1019 cm–3) of the films were adjusted by addition of Te or Zn powder to the GaAs source powder. We show using photoelectrochemical and electron beam-induced current analyses that the minority carrier diffusion lengths of the n- and p-GaAs films reached ~3 μm and ~8 μm, respectively. Hall mobilities approach those achieved for GaAs grown by metal–organic chemical vapor deposition, 1000–4200 cm2 V–1 s–1 for n-GaAs and 50–240 cm V–1 s–1 for p-GaAs depending on doping level. We conclude that the electronic quality of GaAs grown by close-spaced vapor transport is similar to that of GaAs made using conventional techniques and is thus sufficient for high-performance photovoltaic applications.

  13. Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III–V photovoltaics

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ritenour, Andrew J.; Boucher, Jason W.; DeLancey, Robert; Greenaway, Ann L.; Aloni, Shaul; Boettcher, Shannon W.

    2014-09-01

    We report the use of a simple close-spaced vapor transport technique for the growth of high-quality epitaxial GaAs films using potentially inexpensive GaAs powders as precursors. The free carrier type and density (1016 to 1019 cm–3) of the films were adjusted by addition of Te or Zn powder to the GaAs source powder. We show using photoelectrochemical and electron beam-induced current analyses that the minority carrier diffusion lengths of the n- and p-GaAs films reached ~3 μm and ~8 μm, respectively. Hall mobilities approach those achieved for GaAs grown by metal–organic chemical vapor deposition, 1000–4200 cm2 V–1 s–1 for n-GaAsmore » and 50–240 cm V–1 s–1 for p-GaAs depending on doping level. We conclude that the electronic quality of GaAs grown by close-spaced vapor transport is similar to that of GaAs made using conventional techniques and is thus sufficient for high-performance photovoltaic applications.« less

  14. SolarTec AG | Open Energy Information

    Open Energy Info (EERE)

    SolarTec AG Place: Munich, Bavaria, Germany Product: Developing a technology it calls Sol*Con- 700x Fresnel concentrators for use with gallium arsenide or germanium cells, also...

  15. Steady State Sputtering Yields and Surface Compositions of Depleted Uranium and Uranium Carbide bombarded by 30 keV Gallium or 16 keV Cesium Ions.

    SciTech Connect (OSTI)

    Siekhaus, W. J.; Teslich, N. E.; Weber, P. K.

    2014-10-23

    Depleted uranium that included carbide inclusions was sputtered with 30-keV gallium ions or 16-kev cesium ions to depths much greater than the ions’ range, i.e. using steady-state sputtering. The recession of both the uranium’s and uranium carbide’s surfaces and the ion corresponding fluences were used to determine the steady-state target sputtering yields of both uranium and uranium carbide, i.e. 6.3 atoms of uranium and 2.4 units of uranium carbide eroded per gallium ion, and 9.9 uranium atoms and 3.65 units of uranium carbide eroded by cesium ions. The steady state surface composition resulting from the simultaneous gallium or cesium implantation and sputter-erosion of uranium and uranium carbide were calculated to be U₈₆Ga₁₄, (UC)₇₀Ga₃₀ and U₈₁Cs₉, (UC)₇₉Cs₂₁, respectively.

  16. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  17. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J. Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y.

    2014-09-08

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  18. Proposed measurement of spin currents in a GaAs crystal using the electro-optical Pockels effect

    SciTech Connect (OSTI)

    Zhang, Xingchu; Zheng, Yongjun; She, Weilong

    2014-07-14

    A new method for measuring spin currents is proposed, based on the linear electro-optic (Pockels) effect caused by the additional second-order nonlinear electric susceptibility (electro-optic tensor) generated by the spin currents. The non-zero elements of electro-optic tensor induced by spin currents in GaAs crystal are calculated, and the wave coupling theory of linear electro-optic effect is used to analyze the polarization change of a probe beam. The numerical results show that, for a linearly polarized probe beam with a frequency close to the band gap of GaAs crystal, its polarization rotation can be as large as 14 μrad under an applied electric field of about 350 V/mm. This effect should offer an alternative detection method for spintronics.

  19. The influence of electron irradiation on electron holography of focused ion beam milled GaAs p-n junctions

    SciTech Connect (OSTI)

    Cooper, David; Twitchett-Harrison, Alison C.; Midgley, Paul A.; Dunin-Borkowski, Rafal E.

    2007-05-01

    Electron beam irradiation is shown to significantly influence phase images recorded from focused ion beam milled GaAs p-n junction specimens examined using off-axis electron holography in the transmission electron microscope. Our results show that the use of improved electrical connections to the specimen overcomes this problem, and may allow the correct built in potential across the junction to be recovered.

  20. Atomic-scale observation of parallel development of super elasticity and reversible plasticity in GaAs nanowires

    SciTech Connect (OSTI)

    Bao, Peite; Du, Sichao; Zheng, Rongkun; Wang, Yanbo; Liao, Xiaozhou; Cui, Xiangyuan; Yen, Hung-Wei; Kong Yeoh, Wai; Ringer, Simon P.; Gao, Qiang; Hoe Tan, H.; Jagadish, Chennupati; Liu, Hongwei; Zou, Jin

    2014-01-13

    We report the atomic-scale observation of parallel development of super elasticity and reversible dislocation-based plasticity from an early stage of bending deformation until fracture in GaAs nanowires. While this phenomenon is in sharp contrast to the textbook knowledge, it is expected to occur widely in nanostructures. This work indicates that the super recoverable deformation in nanomaterials is not simple elastic or reversible plastic deformation in nature, but the coupling of both.

  1. Shear strain mediated magneto-electric effects in composites of piezoelectric lanthanum gallium silicate or tantalate and ferromagnetic alloys

    SciTech Connect (OSTI)

    Sreenivasulu, G.; Piskulich, E.; Srinivasan, G.; Qu, P.; Qu, Hongwei; Petrov, V. M.; Fetisov, Y. K.; Nosov, A. P.

    2014-07-21

    Shear strain mediated magneto-electric (ME) coupling is studied in composites of piezoelectric Y-cut lanthanum gallium silicate (LGS) or tantalate (LGT) and ferromagnetic Fe-Co-V alloys. It is shown that extensional strain does not result in ME effects in these layered composites. Under shear strain generated by an ac and dc bias magnetic fields along the length and width of the sample, respectively, strong ME coupling is measured at low-frequencies and at mechanical resonance. A model is discussed for the ME effects. These composites of Y-cut piezoelectrics and ferromagnetic alloys are of importance for shear strain based magnetic field sensors.

  2. Gallium and indium imaging agents. 2. Complexes of sulfonated catecholyamide sequestering agents

    SciTech Connect (OSTI)

    Pecoraro, V.L.; Wong, G.B.; Raymond, K.N.

    1982-06-01

    The solution equilibria for the reaction of Ga(III) and In(III) with the hexadentate ligands N, N', N''-tris(2,3-dihydroxy-5-sulfonatobenzoyl)-1,3,5-tris(aminomethyl)benzene (MECAMS) and N, N', N''-tris(2,3-dihydroxy-5-sulfonatobenzoyl)-1,5,10-triazadecane (3,4-LICAMS) and the bidentate catechol N,N-dimethyl-2,3-dihydroxy-5-sulfonatobenzamide (DMBS) have been determined on 0.1 M KNO/sub 3/ at 25/sup 0/C. Both Ga(III) and In(III) are coordinated by three catecholate groups at high pH and have formation constants of the order ..beta../sub 110/ = 10/sup 38/ M/sup -1/. As the acidity of the medium is increased, the metal complexes of the hexadentate sequestering agents undergo protonation reactions. For the determination of the nature of the protonated metal chelates, the stretching frequency of the amide carbonyl has been monitored in D/sub 2/O by Fourier transform infrared spectroscopy (FT IR). These data support a series of two one-proton steps to form a mixed salicylate-catecholate coordination about the metal ion. In the salicylate bonding mode the metal is bound through the ortho phenolic oxygen and the amide cabonyl whereas catecholate coordination is via the adjacent phenols. In contrast, protonation of the M/sup III/(DMBS)/sub 3/ complexes results in dissociation of a catechol moiety to form M/sup III/(DMBS)/sub 2/. The potential use of these compounds as tumor-imaging agents in cancer diagnosis is discussed, with specific attention to the role of the gallium transferrin complex.

  3. Quantum efficiency temporal response and lifetime of a GaAs cathode in SRF electron gun

    SciTech Connect (OSTI)

    Wang, E.; Ben-Zvi, I.; Kewisch, J.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2010-05-23

    RF electron guns with a strained super lattice GaAs cathode can generate polarized electron beam of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface. In a normal conducting RF gun, the extremely high vaccum required by these cathodes can not be met. We report on an experiment with a superconducting SRF gun, which can maintain a vacuum of nearly 10-12 torr because of cryo-pumping at the temperature of 4.2K. With conventional activation, we obtained a QE of 3% at 532 nm, with lifetime of nearly 3 days in the preparation chamber. We plan to use this cathode in a 1.3 GHz 1/2 cell SRF gun to study its performance. In addition, we studied the multipacting at the location of cathode. A new model based on the Forkker-Planck equation which can estimate the bunch length of the electron beam is discussed in this paper. Future particle accelerators such as eRHIC and ILC require high brightness, high current polarized electrons Recently, using a superlattice crystal, the maximum polarization of 95% was reached. Activation with Cs,O lowers the electron affinity and makes it energetically possible for all the electrons excited in to the conduction band and reach the surface to escape into the vacuum. Presently the polarized electron sources are based on DC gun, such as that at the CEBAF at Jlab. In these devices, the life time of the cathode is extended due to the reduced back bombardment in their UHV conditions. However, the low accelerating gradient of the DC guns lead to poor longitudinal emittance. The higher accelerating gradient of the RF gun generates low emittance beams. Superconducting RF guns combine the excellent vacuum conditions of the DC guns with the higher accelerating gradients of the RF guns and provide potentially a long lived cathode with very low transverse and longitudinal emittance. In our work at BNL, we successfully activated the GaAs. The quantum efficient is 3% at 532 nm and is expected

  4. Characterization of the CEBAF 100 kV DC GaAs Photoelectron Gun Vacuum System

    SciTech Connect (OSTI)

    M.L. Stutzman; P. Adderley; J. Brittian; J. Clark; J. Grames; J. Hansknecht; G.R. Myneni; M. Poelker

    2007-05-01

    A vacuum system with pressure in the low ultra-high vacuum (UHV) range is essential for long photocathode lifetimes in DC high voltage GaAs photoguns. A discrepancy between predicted and measured base pressure in the CEBAF photoguns motivated this study of outgassing rates of three 304 stainless steel chambers with different pretreatments and pump speed measurements of non-evaporable getter (NEG) pumps. Outgassing rates were measured using two independent techniques. Lower outgassing rates were achieved by electropolishing and vacuum firing the chamber. The second part of the paper describes NEG pump speed measurements as a function of pressure through the lower part of the UHV range. Measured NEG pump speed is high at pressures above 510^?11 Torr, but may decrease at lower pressures depending on the interpretation of the data. The final section investigates the pump speed of a locally produced NEG coating applied to the vacuum chamber walls. These studies represent the first detailed vacuum measurements of CEBAF photogun vacuum chambers.

  5. Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors

    DOE Patents [OSTI]

    Curtis, Calvin J.; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S.; Nekuda, Jennifer A.

    2011-11-15

    Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films (66) on substrates (52).

  6. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  7. Multi-junction, monolithic solar cell using low-band-gap materials lattice matched to GaAs or Ge

    DOE Patents [OSTI]

    Olson, Jerry M.; Kurtz, Sarah R.; Friedman, Daniel J.

    2001-01-01

    A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs. To achieve desired band gaps and lattice constants, the semiconductor cells may be fabricated from a number of materials including Ge, GaInP, GaAs, GaInAsP, GaInAsN, GaAsGe, BGaInAs, (GaAs)Ge, CuInSSe, CuAsSSe, and GaInAsNP. To further increase efficiency, the thickness of each semiconductor cell is controlled to match the photocurrent generated in each cell. To facilitate photocurrent flow, a plurality of tunnel junctions of low-resistivity material are included between each adjacent semiconductor cell. The conductivity or direction of photocurrent in the solar cell device may be selected by controlling the specific p-type or n-type characteristics for each active junction.

  8. Highly polarized emission in spin resolved photoelectron spectroscopy of alpha-Fe(001)/GaAs(001)

    SciTech Connect (OSTI)

    Tobin, James; Yu, Sung Woo; Morton, Simon; Waddill, George; Thompson, Jamie; Neal, James; Spangenberg, Matthais; Shen, T.H.

    2009-05-19

    Highly spin-polarized sources of electrons, Integrated into device design, remain of great interest to the spintronic and magneto-electronic device community Here, the growth of Fe upon GaAs(001) has been studied with photoelectron spectroscopy (PES), including Spin Resolved PES. Despite evidence of atomic level disorder such as intermixing, an over-layer with the spectroscopic signature of alpha-Fe(001), with a bcc real space ordering, Is obtained The results will be discussed in light of the possibility of using such films as a spin-polarized source in device applications.

  9. Chirped-pulse manipulated carrier dynamics in low-temperature molecular-beam-epitaxy grown GaAs

    SciTech Connect (OSTI)

    Lee, Chao-Kuei; Lin, Yuan-Yao; Lin, Sung-Hui; Lin, Gong-Ru; Pan, Ci-Ling

    2014-04-28

    Chirped pulse controlled carrier dynamics in low-temperature molecular-beam-epitaxy grown GaAs are investigated by degenerate pump-probe technique. Varying the chirped condition of excited pulse from negative to positive increases the carrier relaxation time so as to modify the dispersion and reshape current pulse in time domain. The spectral dependence of carrier dynamics is analytically derived and explained by Shockley-Read Hall model. This observation enables the new feasibility of controlling carrier dynamics in ultrafast optical devices via the chirped pulse excitations.

  10. Observed damage during Argon gas cluster depth profiles of compound semiconductors

    SciTech Connect (OSTI)

    Barlow, Anders J. Portoles, Jose F.; Cumpson, Peter J.

    2014-08-07

    Argon Gas Cluster Ion Beam (GCIB) sources have become very popular in XPS and SIMS in recent years, due to the minimal chemical damage they introduce in the depth-profiling of polymer and other organic materials. These GCIB sources are therefore particularly useful for depth-profiling polymer and organic materials, but also (though more slowly) the surfaces of inorganic materials such as semiconductors, due to the lower roughness expected in cluster ion sputtering compared to that introduced by monatomic ions. We have examined experimentally a set of five compound semiconductors, cadmium telluride (CdTe), gallium arsenide (GaAs), gallium phosphide (GaP), indium arsenide (InAs), and zinc selenide (ZnSe) and a high-? dielectric material, hafnium oxide (HfO), in their response to argon cluster profiling. An experimentally determined HfO etch rate of 0.025?nm/min (3.95??10{sup ?2}?amu/atom in ion) for 6?keV Ar gas clusters is used in the depth scale conversion for the profiles of the semiconductor materials. The assumption has been that, since the damage introduced into polymer materials is low, even though sputter yields are high, then there is little likelihood of damaging inorganic materials at all with cluster ions. This seems true in most cases; however, in this work, we report for the first time that this damage can in fact be very significant in the case of InAs, causing the formation of metallic indium that is readily visible even to the naked eye.

  11. Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices

    SciTech Connect (OSTI)

    Peleshchak, R. M.; Guba, S. K.; Kuzyk, O. V.; Kurilo, I. V.; Dankiv, O. O.

    2013-03-15

    The distribution of hydrostatic strains in Bi{sup 3+}-doped InAs quantum dots embedded in a GaAs matrix are calculated in the context of the deformation-potential model. The dependences of strains in the material of spherical InAs quantum dots with substitutional (Bi {yields} As) and interstitial (Bi) impurities on the quantum-dot size are derived. The qualitative correlation of the model with the experiment is discussed. The data on the effect of doping on the morphology of self-assembled InAs:Bi quantum dots in a GaAs matrix are obtained.

  12. Compact, Interactive Electric Vehicle Charger: Gallium-Nitride Switch Technology for Bi-directional Battery-to-Grid Charger Applications

    SciTech Connect (OSTI)

    2010-10-01

    ADEPT Project: HRL Laboratories is using gallium nitride (GaN) semiconductors to create battery chargers for electric vehicles (EVs) that are more compact and efficient than traditional EV chargers. Reducing the size and weight of the battery charger is important because it would help improve the overall performance of the EV. GaN semiconductors process electricity faster than the silicon semiconductors used in most conventional EV battery chargers. These high-speed semiconductors can be paired with lighter-weight electrical circuit components, which helps decrease the overall weight of the EV battery charger. HRL Laboratories is combining the performance advantages of GaN semiconductors with an innovative, interactive battery-to-grid energy distribution design. This design would support 2-way power flow, enabling EV battery chargers to not only draw energy from the power grid, but also store and feed energy back into it.

  13. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect (OSTI)

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  14. Plasmon resonance and perfect light absorption in subwavelength trench arrays etched in gallium-doped zinc oxide film

    SciTech Connect (OSTI)

    Hendrickson, Joshua R. Leedy, Kevin; Cleary, Justin W.; Vangala, Shivashankar; Nader, Nima; Guo, Junpeng

    2015-11-09

    Near-perfect light absorption in subwavelength trench arrays etched in highly conductive gallium-doped zinc oxide films was experimentally observed in the mid infrared regime. At wavelengths corresponding to the resonant excitation of surface plasmons, up to 99% of impinging light is efficiently trapped and absorbed in the periodic trenches. Scattering cross sectional calculations reveal that each individual trench acts like a vertical split ring resonator with a broad plasmon resonance spectrum. The coupling of these individual plasmon resonators in the grating structure leads to enhanced photon absorption and significant resonant spectral linewidth narrowing. Ellipsometry measurements taken before and after device fabrication result in different permittivity values for the doped zinc oxide material, indicating that localized annealing occurred during the plasma etching process due to surface heating. Simulations, which incorporate a 50 nm annealed region at the zinc oxide surface, are in a good agreement with the experimental results.

  15. Magnetic anisotropy in ultrathin Fe films on GaAs, ZnSe, and Ge (001) substrates

    SciTech Connect (OSTI)

    Tivakornsasithorn, K.; Liu, X.; Li, X.; Dobrowolska, M.; Furdyna, J. K.

    2014-07-28

    We discuss magnetic anisotropy parameters of ferromagnetic body-centered cubic (bcc) Fe films grown by molecular beam epitaxy (MBE) on (001) substrates of face-centered cubic (fcc) GaAs, ZnSe, and Ge. High-quality MBE growth of these metal/semiconductor combinations is made possible by the fortuitous atomic relationship between the bcc Fe and the underlying fcc semiconductor surfaces, resulting in excellent lattice match. Magnetization measurements by superconducting quantum interference device (SQUID) indicate that the Fe films grown on (001) GaAs surfaces are characterized by a very strong uniaxial in-plane anisotropy; those grown on (001) Ge surfaces have a fully cubic anisotropy; and Fe films grown on ZnSe represent an intermediate case between the preceding two combinations. Ferromagnetic resonance measurements carried out on these three systems provide a strikingly clear quantitative picture of the anisotropy parameters, in excellent agreement with the SQUID results. Based on these results, we propose that the observed anisotropy of cubic Fe films grown in this way results from the surface reconstruction of the specific semiconductor substrate on which the Fe film is deposited. These results suggest that, by controlling surface reconstruction of the substrate during the MBE growth, one may be able to engineer the magnetic anisotropy in Fe, and possibly also in other MBE-grown ferromagnetic films.

  16. Interface composition between Fe{sub 3}O{sub 4} nanoparticles and GaAs for spintronic applications

    SciTech Connect (OSTI)

    Hihath, Sahar; Kiehl, Richard A.; Benthem, Klaus van

    2014-08-28

    Recent interest in spintronic applications has necessitated the study of magnetic materials in contact with semiconductor substrates; importantly, the structure and composition of these interfaces can influence both device functionality and the magnetic properties. Nanoscale ferromagnet/semiconductor structures are of particular interest. In this study, the interface structure between a monolayer of ferromagnetic magnetite (Fe{sub 3}O{sub 4}) nanoparticles and a GaAs substrate was studied using cross-sectional transmission electron microscopy techniques. It was found that a continuous amorphous oxide interface layer separates the nanoparticles from the GaAs substrate, and that iron diffused into the interface layer forming a compositional gradient. Electron energy-loss near-edge fine structures of the O K absorption edge revealed that the amorphous oxide is composed of γ-Fe{sub 2}O{sub 3} directly underneath the Fe{sub 3}O{sub 4} nanoparticles, followed by a solid solution of Ga{sub 2}O{sub 3} and FeO and mostly Ga{sub 2}O{sub 3} when approaching the buckled oxide/substrate interface. Real-space density functional theory calculations of the dynamical form factor confirmed the experimental observations. The implication of the findings on the optimization of these structures for spin injection is discussed.

  17. Outdoor Testing of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied

    SciTech Connect (OSTI)

    McMahon, W. E.; Emergy, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

    2005-08-01

    In this study, we measure the performance of GaInP2/GaAs tandem cells under direct beam sunlight outdoors in order to quantify their sensitivity to both spectral variation and GaInP2 top-cell thickness. A set of cells with five different top-cell thicknesses was mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for either the ASTM G-173 direct (G-173D) spectrum or the "air mass 1.5 global" (AM1.5G) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra with the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

  18. First-principles studies on molecular beam epitaxy growth of GaAs1-xBix

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Luo, Guangfu; Yang, Shujiang; Li, Jincheng; Arjmand, Mehrdad; Szlufarska, Izabela; Brown, April S.; Kuech, Thomas F.; Morgan, Dane

    2015-07-14

    We investigate the molecular beam epitaxy (MBE) growth of GaAs1-xBix film using density functional theory with spin-orbit coupling to understand the growth of this film, especially the mechanisms of Bi incorporation. We study the stable adsorption structures and kinetics of the incident molecules (As₂ molecule, Ga atom, Bi atom, and Bi₂ molecule) on the (2 x 1)-Gasub||Bi surface and a proposed q(1 x 1)-Gasub||AsAs surface has a quasi-(1 x 1) As layer above the Ga-terminated GaAs substrate and a randomly oriented As dimer layer on top. We obtain the desorption and diffusion barriers of the adsorbed molecules and also themore » reaction barriers of three key processes related to Bi evolution, namely, Bi incorporation, As/Bi exchange, and Bi clustering. The results help explain the experimentally observed dependence of Bi incorporation on the As/Ga ratio and growth temperature. Furthermore, we find that As₂ exchange with Bi of the (2 x 1)-Gasub||Bi surface is a key step controlling the kinetics of the Bi incorporation. Finally, we explore two possible methods to enhance the Bi incorporation, namely, replacing the MBE growth mode from codeposition of all fluxes with a sequential deposition of fluxes and applying asymmetric in-plane strain to the substrate.« less

  19. Towards low-cost high-efficiency GaAs photovoltaics and photoelectrodes grown via vapor transport from a solid source

    SciTech Connect (OSTI)

    Boucher, Jason; Ritenour, Andrew; Boettcher, Shannon W.

    2013-04-29

    Towards low-cost high-efficiency GaAs photovoltaics and photoelectrodes grown via vapor transport from a solid source GaAs is an attractive material for thin-film photovoltaic applications, but is not widely used for terrestrial power generation due to the high cost of metal-organic chemical vapor deposition (MOCVD) techniques typically used for growth. Close space vapor transport is an alternative that allows for rapid growth rates of III-V materials, and does not rely on the toxic and pyrophoric precursors used in MOCVD. We characterize CSVT films of GaAs using photoelectrochemical current-voltage and quantum efficiency measurements. Hole diffusion lengths which exceed 1.5 um are extracted from internal quantum efficiency measurements using the Gartner model. Device physics simulations suggest that solar cells based on these films could reach efficiencies exceeding 24 %. To reach this goal, a more complete understanding of the electrical properties and characterization of defects will be necessary, including measurements on complete solid-state devices. Doping of films is achieved by using source material containing the desired impurity (e.g., Te or Zn). We discuss strategies for growing III-V materials on inexpensive substrates that are not lattice-matched to GaAs.

  20. Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography

    SciTech Connect (OSTI)

    Jha, Smita; Liu, C.-C.; Nealey, P. F.; Kuech, T. F.; Kuan, T. S.; Babcock, S. E.; Park, J. H.; Mawst, L. J.

    2009-08-10

    Defect reduction in the large lattice mismatched system of GaSb on GaAs, {approx}7%, was accomplished using full wafer block copolymer (BCP) lithography. A self-assembled BCP mask layer was used to generate a hexagonal pattern of {approx}20 nm holes on {approx}40 nm centers in a 20 nm SiO{sub 2} layer. GaSb growth initially takes place selectively within these holes leading to a dense array of small, strain-relaxed epitaxial GaSb islands. The GaSb grown on the patterned SiO{sub 2} layer exhibits a reduction in the x-ray linewidth attributed to a decrease in the threading dislocation density when compared to blanket pseudomorphic film growth.

  1. Metamorphic approach to single quantum dot emission at 1.55 {mu}m on GaAs substrate

    SciTech Connect (OSTI)

    Semenova, E. S.; Hostein, R.; Patriarche, G.; Mauguin, O.; Largeau, L.; Robert-Philip, I.; Beveratos, A.; Lemaitre, A.

    2008-05-15

    We report on the fabrication and the characterization of InAs quantum dots (QDs) embedded in an indium rich In{sub 0.42}Ga{sub 0.58}As metamorphic matrix grown on a GaAs substrate. Growth conditions were chosen so as to minimize the number of threading dislocations and other defects produced during the plastic relaxation. Sharp and bright lines, originating from the emission of a few isolated single quantum dots, were observed in microphotoluminescence around 1.55 {mu}m at 5 K. They exhibit, in particular, a characteristic exciton/biexciton behavior. These QDs could offer an interesting alternative to other approaches as InAs/InP QDs for the realization of single photon emitters at telecom wavelengths.

  2. Mechanisms Determining the Structure of Gold-Catalyzed GaAs Nanowires Studied by in Situ X-ray Diffraction

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Takahasi, Masamitu; Kozu, Miwa; Sasaki, Takuo; Hu, Wen

    2015-09-02

    The evolution of polytypism during GaAs nanowire growth was investigated with in situ X-ray diffraction. The growth of nanowires was found to start with the formation of zincblende structure, followed by the growth of wurtzite structure. The growth process was well reproduced by a simulation based on a layer-by-layer nucleation model. The good agreement between the measured and simulated results confirms that nucleation costs higher energy for the stackings changing the crystal structure than for those conserving the preceding structure. The transition in prevalent structure can be accounted for by the change of local growth conditions related to the shapemore » of triple phase line rather than by the change in supersaturation level, which quickly reaches steady state after starting growth.« less

  3. Mechanisms Determining the Structure of Gold-Catalyzed GaAs Nanowires Studied by in Situ X-ray Diffraction

    SciTech Connect (OSTI)

    Takahasi, Masamitu; Kozu, Miwa; Sasaki, Takuo; Hu, Wen

    2015-09-02

    The evolution of polytypism during GaAs nanowire growth was investigated with in situ X-ray diffraction. The growth of nanowires was found to start with the formation of zincblende structure, followed by the growth of wurtzite structure. The growth process was well reproduced by a simulation based on a layer-by-layer nucleation model. The good agreement between the measured and simulated results confirms that nucleation costs higher energy for the stackings changing the crystal structure than for those conserving the preceding structure. The transition in prevalent structure can be accounted for by the change of local growth conditions related to the shape of triple phase line rather than by the change in supersaturation level, which quickly reaches steady state after starting growth.

  4. Magnetic anisotropies in epitaxial Fe{sub 3}O{sub 4}/GaAs(100) patterned structures

    SciTech Connect (OSTI)

    Zhang, W. Zhang, D.; Yuan, S. J.; Huang, Z. C.; Zhai, Y.; Wong, P. K. J.; Wu, J.; Xu, Y. B.

    2014-10-15

    Previous studies on epitaxial Fe{sub 3}O{sub 4} rings in the context of spin-transfer torque effect have revealed complicated and undesirable domain structures, attributed to the intrinsic fourfold magnetocrystalline anisotropy in the ferrite. In this Letter, we report a viable solution to this problem, utilizing a 6-nm-thick epitaxial Fe{sub 3}O{sub 4} thin film on GaAs(100), where the fourfold magnetocrystalline anisotropy is negligible. We demonstrate that in the Fe{sub 3}O{sub 4} planar wires patterned from our thin film, such a unique magnetic anisotropy system has been preserved, and relatively simple magnetic domain configurations compared to those previous reports can be obtained.

  5. Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

    SciTech Connect (OSTI)

    Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko; Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel; Garcia, Alipio

    2009-06-08

    We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

  6. Influence of deposition field on the magnetic anisotropy in epitaxial Co70Fe30 films on GaAs(001)

    SciTech Connect (OSTI)

    Hindmarch, A.T.; Arena, D.; Dempsey, K.J.; Henini, M.; Marrows, C.H.

    2010-03-10

    The effect of the application of a magnetic field during deposition of epitaxial Co{sub 70}Fe{sub 30} onto GaAs(001) is shown; we find an initially counterintuitive result. For field applied along the interfacial uniaxial hard axis the relative effective uniaxial magnetic anisotropy is increased by a factor of two in comparison to both field along the uniaxial easy axis, or no field; usually, application of a deposition field results in a uniaxial easy axis parallel to this field direction. We show that the deposition field changes the maximal projection of the atomic orbital magnetic moments onto the easy axis, which corresponds to a deposition field induced shift in the Helmholtz free-energy landscape of the system.

  7. Monolithically interconnected GaAs solar cells: A new interconnection technology for high voltage solar cell output

    SciTech Connect (OSTI)

    Dinetta, L.C.; Hannon, M.H.

    1995-10-01

    Photovoltaic linear concentrator arrays can benefit from high performance solar cell technologies being developed at AstroPower. Specifically, these are the integration of thin GaAs solar cell and epitaxial lateral overgrowth technologies with the application of monolithically interconnected solar cell (MISC) techniques. This MISC array has several advantages which make it ideal for space concentrator systems. These are high system voltage, reliable low cost monolithically formed interconnections, design flexibility, costs that are independent of array voltage, and low power loss from shorts, opens, and impact damage. This concentrator solar cell will incorporate the benefits of light trapping by growing the device active layers over a low-cost, simple, PECVD deposited silicon/silicon dioxide Bragg reflector. The high voltage-low current output results in minimal 12R losses while properly designing the device allows for minimal shading and resistance losses. It is possible to obtain open circuit voltages as high as 67 volts/cm of solar cell length with existing technology. The projected power density for the high performance device is 5 kW/m for an AMO efficiency of 26% at 1 5X. Concentrator solar cell arrays are necessary to meet the power requirements of specific mission platforms and can supply high voltage power for electric propulsion systems. It is anticipated that the high efficiency, GaAs monolithically interconnected linear concentrator solar cell array will enjoy widespread application for space based solar power needs. Additional applications include remote man-portable or ultra-light unmanned air vehicle (UAV) power supplies where high power per area, high radiation hardness and a high bus voltage or low bus current are important. The monolithic approach has a number of inherent advantages, including reduced cost per interconnect and increased reliability of array connections. There is also a high potential for a large number of consumer products.

  8. Saddle-like deformation in a dielectric elastomer actuator embedded with liquid-phase gallium-indium electrodes

    SciTech Connect (OSTI)

    Wissman, J.; Finkenauer, L.; Deseri, L.; Majidi, C.

    2014-10-14

    We introduce a dielectric elastomer actuator (DEA) composed of liquid-phase Gallium-Indium (GaIn) alloy electrodes embedded between layers of poly(dimethylsiloxane) (PDMS) and examine its mechanics using a specialized elastic shell theory. Residual stresses in the dielectric and sealing layers of PDMS cause the DEA to deform into a saddle-like geometry (Gaussian curvature K<0). Applying voltage Φ to the liquid metal electrodes induces electrostatic pressure (Maxwell stress) on the dielectric and relieves some of the residual stress. This reduces the longitudinal bending curvature and corresponding angle of deflection ϑ. Treating the elastomer as an incompressible, isotropic, NeoHookean solid, we develop a theory based on the principle of minimum potential energy to predict the principal curvatures as a function of Φ. Based on this theory, we predict a dependency of ϑ on Φ that is in strong agreement with experimental measurements performed on a GaIn-PDMS composite. By accurately modeling electromechanical coupling in a soft-matter DEA, this theory can inform improvements in design and fabrication.

  9. Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system

    SciTech Connect (OSTI)

    Kiba, Takayuki Murayama, Akihiro; Tanaka, Toru; Tamura, Yosuke; Higo, Akio; Thomas, Cedric; Samukawa, Seiji

    2014-10-15

    We demonstrate the effect of artificial lateral quantum confinement on exciton-spin relaxation in a GaAs electronic system. GaAs nanodisks (NDs) were fabricated from a quantum well (QW) by top-down nanotechnology using neutral-beam etching aided by protein-engineered bio-nano-templates. The exciton-spin relaxation time was 1.4 ns due to ND formation, significantly extended compared to 0.44 ns for the original QW, which is attributed to weakening of the hole-state mixing in addition to freezing of the carrier momentum. The temperature dependence of the spin-relaxation time depends on the ND thickness, reflecting the degree of quantum confinement.

  10. GaP ring-like nanostructures on GaAs (100) with In{sub 0.15}Ga{sub 0.85}As compensation layers

    SciTech Connect (OSTI)

    Prongjit, Patchareewan Pankaow, Naraporn Boonpeng, Poonyasiri Thainoi, Supachok Panyakeow, Somsak Ratanathammaphan, Somchai

    2013-12-04

    We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In{sub 0.15}Ga{sub 0.85}As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In{sub 0.15}Ga{sub 0.85}As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In{sub 0.15}Ga{sub 0.85}As layer thickness.

  11. Atomic and electronic structures of SrTiO3/GaAs heterointerfaces: An 80-kV atomic-resolution electron energy-loss spectroscopy study

    SciTech Connect (OSTI)

    Qiao, Q.; Klie, Robert F; Ogut, Serdar; Idrobo Tapia, Juan C

    2012-01-01

    We have examined the atomic and electronic structures of epitaxially grown, ultrathin SrTiO{sub 3} (100) films on GaAs (001) using 80-kV aberration-corrected atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy (EELS) to develop a fundamental understanding of the interfacial structure-property relationships. We find that the interface is atomically abrupt and no surface reconstruction of the GaAs (001) surface is observed. Using atomic-column resolved EELS, we examine the oxygen vacancy and Ti concentrations in the SrTiO{sub 3} film and across the heterointerface. We show that Ti diffuses into the first few monolayers of GaAs. Using a combination of EELS and first-principles calculations, we present evidence for the formation of As oxides at the interface depending on the thin-film growth conditions. These findings are used to explain the differences in the transport behavior of the films.

  12. Oscillations of absorption of a probe picosecond light pulse caused by its interaction with stimulated picosecond emission of GaAs

    SciTech Connect (OSTI)

    Ageeva, N. N.; Bronevoi, I. L. Zabegaev, D. N.; Krivonosov, A. N.

    2015-04-15

    The self-modulation of absorption of a picosecond light pulse was observed earlier [1] in a thin (∼1-μm thick) GaAs layer pumped by a high-power picosecond pulse. Analysis of the characteristics of this self-modulation predicted [5] that the dependences of the probe pulse absorption on the pump pulse energy and picosecond delay between pump and probe pulses should be self-modulated by oscillations. Such self-modulation was experimentally observed in this work. Under certain conditions, absorption oscillations proved to be a function of part of the energy of picosecond stimulated emission of GaAs lying above a certain threshold in the region where the emission front overlapped the probe pulse front. Absorption oscillations are similar to self-modulation of the GaAs emission characteristics observed earlier [4]. This suggests that the self-modulation of absorption and emission is determined by the same type of interaction of light pulses in the active medium, the physical mechanism of which has yet to be determined.

  13. Optical reflection and contactless electroreflection from GaAlAs layers with periodically arranged GaAs quantum wells

    SciTech Connect (OSTI)

    Chaldyshev, V. V. Shkol'nik, A. S.; Evtikhiev, V. P.; Holden, T.

    2006-12-15

    Optical reflection and electroreflection for the AlGaAs layers containing the periodically arranged GaAs quantum wells of different thickness are studied at photon energies ranging from 1 to 2 eV. It is established that the spectral dependence of the reflectance involves three different contributions made by (i) the reflection from the medium-air interface; (ii) the interference reflection due to the periodically modulated refractive index, since the materials of the wells and barriers have different refractive indices; and (iii) the reflection produced by the interaction of electromagnetic waves with the excition states in the quantum wells. Analysis of the reflection spectra shows that these contributions are characterized by different behavior with variations in temperature, angle of incidence of light, and polarization; however, quantitative separation of the spectra into individual contributions presents a rather difficult problem. To separate the contribution originating from the interaction of light with the exciton states from the optical spectra, a special approach based on contactless measurements of the optical electroreflectance over a certain spectral region is developed. It is shown that this method provides a means for determining the parameters of the exciton states in the quantum wells.

  14. Charge and fluence lifetime measurements of a dc high voltage GaAs photogun at high average current

    SciTech Connect (OSTI)

    J. Grames, R. Suleiman, P.A. Adderley, J. Clark, J. Hansknecht, D. Machie, M. Poelker, M.L. Stutzman

    2011-04-01

    GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large drive laser beam to distribute ion damage over a larger area, and (d) by applying a relatively low bias voltage to the anode to repel ions created within the downstream beam line. A combination of these techniques provided the best total charge extracted lifetimes in excess of 1000 C at dc beam currents up to 9.5 mA, using green light illumination of bulk GaAs inside a 100 kV photogun.

  15. Sn-enriched Ge/GeSn nanostructures grown by MBE on (001) GaAs and Si wafers

    SciTech Connect (OSTI)

    Sadofyev, Yu. G. Martovitsky, V. P.; Klekovkin, A. V.; Saraykin, V. V.; Vasil’evskii, I. S.

    2015-12-15

    Elastically stressed metastable GeSn layers with a tin molar fraction as large as 0.185 are grown on (001) Si and GaAs wafers covered with a germanium buffer layer. A set of wafers with a deviation angle in the range 0°–10° is used. It is established that the GeSn crystal undergoes monoclinic deformation with the angle β to 88° in addition to tetragonal deformation. Misorientation of the wafers surface results in increasing efficiency of the incorporation of tin adatoms into the GeSn crystal lattice. Phase separation in the solid solution upon postgrowth annealing of the structures begins long before the termination of plastic relaxation of elastic heteroepitaxial stresses. Tin released as a result of GeSn decomposition predominantly tends to be found on the surface of the sample. Manifestations of the brittle–plastic mechanism of the relaxation of stresses resulting in the occurrence of microcracks in the subsurface region of the structures under investigation are found.

  16. 20% (AM1.5) efficiency GaAs solar cells on sub-mm grain-size poly-Ge and its transition to low-cost substrates

    SciTech Connect (OSTI)

    Venkatasubramanian, R.; O`Quinn, B.C.; Siivola, E.; Keyes, B.; Ahrenkiel, R.

    1997-12-31

    Some of the key material and device issues related to the development of GaAs solar cells on poly-Ge substrates, including the dark-current reduction mechanism with an undoped spacer at the p{sup +}-n depletion layer, are discussed. Device-structure optimization studies that have led the authors to achieve an AM1.5 efficiency of {approximately}20% for a 4-cm{sup 2}-area GaAs cell on sub-mm grain-size poly-Ge and an efficiency of {approximately}21% for a 0.25-cm{sup 2}-area cell are presented. This successful demonstration of high-efficiency GaAs cells on sub-mm grain-size poly-Ge substrates have motivated us to consider the development of high-quality GaAs materials on significantly lower-cost substrates such as glass and moly foils. To date, the authors have achieved a best minority-carrier lifetime of 0.41 nsec in an n-GaAs thin-film on moly. The role of Group-VI dopant in the possible passivation of grain-boundaries in poly-GaAs is discussed. Development of PV-quality GaAs material, with minority-carrier lifetime of 1 to 2 nsec, on los-cost moly foils can significantly impact both the terrestrial and the space PV applications.

  17. The arsenides LnPd{sub 3}As{sub 2} (Ln = La-Nd, Sm, Gd) and structure refinement of CePd{sub 2-x}As{sub 2} with the ThCr{sub 2}Si{sub 2} structure

    SciTech Connect (OSTI)

    Quebe, P.; Jeitschko, W.

    1995-02-15

    The title compounds were prepared in well-crystallized form by annealing the corresponding binary arsenides in a NaCl/KCl flux. The compounds LnPd{sub 3}As{sub 2} crystallize with a new monoclinic structure type, which was determined from single-crystal X-ray data of GdPd{sub 3}As{sub 2}: C2/m, a = 1656.3(6) pm, b = 404.6(2) pm, c = 993.7(4) pm, {beta} = 107.85(2){degrees}, Z = 6, R = 0.025 for 1728 structure factors and 58 variable parameters. These arsenides belong to a large structural family with a metal to metalloid ratio of 2:1. Somewhat unusual features in the structure of GdPd{sub 3}As{sub 2} are the (distorted) octahedral coordination of one gadolinium site and the square-planar coordination of arsenic atoms around two palladium sites. All of these, however, are also observed for the corresponding atoms in the previously reported, closely related structure of Th{sub 5}Fe{sub 19}P{sub 12}. CePd{sub 2-x}As{sub 2} has the tetragonal ThCr{sub 2}Si{sub 2} structure (a = 425.1(2) pm, c = 1026.1(6)pm, R = 0.023 for 244 F values and 11 variables) with an As-As distance of 247.1(1) pm. The refinement of the occupancy parameter of the palladium position resulted in a value of 87.9(2)% corresponding to the formula CePd{sub 1.758(4)}As{sub 2}. It is argued that the formation of these defects reduces antibonding (destabilizing) Pd-Pd interactions.

  18. Modulation optical spectroscopy of excitons in structures with GaAs multiple quantum wells separated by tunneling-nontransparent barriers

    SciTech Connect (OSTI)

    Chaldyshev, V. V. Shkol'nik, A. S.; Evtikhiev, V. P.; Holden, T.

    2007-12-15

    Contactless optical electroreflectance measurements at different temperatures are used to study exciton states in a structure involving a periodic system of 36 GaAs quantum wells separated by tunneling-nontransparent AlGaAs barriers with thickness 104 nm. In the structure, the width of 32 of the quantum wells is 15 nm, while the width of the remaining four quantum wells, numbered 5, 14, 23, and 32, is 20 nm. The periodicity of the structure corresponds to the Bragg interference condition at the excitonic frequency in quantum wells at the angle of incidence of light {approx}43 deg. From the quantitative analysis of the shape of the contactless electroreflectance line, the parameters of the exciton ground states and excited states are determined for both types of quantum wells. It is established that, for the system of four 20-nm-wide quantum wells separated by a distance of 830 nm, the size-quantization energy in the ground state is 8.4 {+-} 0.1 meV, and the parameter of broadening of the excitonic peak is 1.8 {+-} 0.1 meV at 17 K and increases with temperature up to 2.0 {+-} 0.1 meV at 80 K. For the system of 32 wells with the width 15 nm, the quantum confinement energy in the ground state is 14.9 {+-} 0.1 meV, and the parameter of broadening of the excitonic peak is 2.2 {+-} 0.1 and 2.6 {+-} 0.1 meV at 17 and 80 K, respectively. The possible causes of radiative and nonradiative broadening of exciton states in the systems are discussed.

  19. Final Technical Progress Report: High-Efficiency Low-Cost Thin-Film GaAs Photovoltaic Module Development Program; July 14, 2010 - January 13, 2012

    SciTech Connect (OSTI)

    Mattos, L.

    2012-03-01

    This is the final technical progress report of the High-Efficiency Low-Cost Thin-Film GaAs Photovoltaic Module Development Program. Alta Devices has successfully completed all milestones and deliverables established as part of the NREL PV incubator program. During the 18 months of this program, Alta has proven all key processes required to commercialize its solar module product. The incubator focus was on back end process steps directed at conversion of Alta's high quality solar film into high efficiency 1-sun PV modules. This report describes all program deliverables and the work behind each accomplishment.

  20. Magneto-transport properties of InAs nanowires laterally-grown by selective area molecular beam epitaxy on GaAs (110) masked substrates

    SciTech Connect (OSTI)

    Akabori, M.; Yamada, S.

    2013-12-04

    We prepared InAs nanowires (NWs) by lateral growth on GaAs (110) masked substrates in molecular beam epitaxy. We measured magneto-transport properties of the InAs NWs. In spite of parallel-NW multi-channels, we observed fluctuating magneto-conductance. From the fluctuation, we evaluated phase coherence length as a function of measurement temperature, and found decrease in the length with increase in the temperature. We also evaluate phase coherence length as a function of gate voltage.

  1. InGaAsN Solar Cells with 1.0eV Bandgap, Lattice Matched to GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Banas, J.J.; Gee, J.M.; Hammons, B.E.; Jones, E.D.; Kurtz, S.R.

    1998-11-24

    The design, growth by metal-organic chemical vapor deposition, and processing of an In{sub 0.07}Ga{sub 0.93}As{sub 0.98}N{sub 0.02} solar Al, with 1.0 ev bandgap, lattice matched to GaAs is described. The hole diffusion length in annealed, n-type InGaAsN is 0.6-0.8 pm, and solar cell internal quantum efficiencies > 70% arc obwined. Optical studies indicate that defects or impurities, from InGAsN doping and nitrogen incorporation, limit solar cell performance.

  2. Localization-delocalization transition of electrons at the percolation threshold of semiconductor GaAs1–xNx alloys: The appearance of a mobility edge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Alberi, K.; Fluegel, B.; Beaton, D. A.; Ptak, A. J.; Mascarenhas, A.

    2012-07-09

    Electrons in semiconductor alloys have generally been described in terms of Bloch states that evolve from constructive interference of electron waves scattering from perfectly periodic potentials, despite the loss of structural periodicity that occurs on alloying. Using the semiconductor alloy GaAs₁₋xNx as a prototype, we demonstrate a localized to delocalized transition of the electronic states at a percolation threshold, the emergence of a mobility edge, and the onset of an abrupt perturbation to the host GaAs electronic structure, shedding light on the evolution of electronic structure in these abnormal alloys.

  3. Recent Progress toward Robust Photocathodes

    SciTech Connect (OSTI)

    Mulhollan, G. A.; Bierman, J. C. [Saxet Surface Science, Austin, TX 78744 (United States)

    2009-08-04

    RF photoinjectors for next generation spin-polarized electron accelerators require photo-cathodes capable of surviving RF gun operation. Free electron laser photoinjectors can benefit from more robust visible light excited photoemitters. A negative electron affinity gallium arsenide activation recipe has been found that diminishes its background gas susceptibility without any loss of near bandgap photoyield. The highest degree of immunity to carbon dioxide exposure was achieved with a combination of cesium and lithium. Activated amorphous silicon photocathodes evince advantageous properties for high current photoinjectors including low cost, substrate flexibility, visible light excitation and greatly reduced gas reactivity compared to gallium arsenide.

  4. Low dimensional GaAs/air vertical microcavity lasers

    SciTech Connect (OSTI)

    Gessler, J.; Steinl, T.; Fischer, J.; Hfling, S.; Schneider, C.; Kamp, M.; Mika, A.; S?k, G.; Misiewicz, J.

    2014-02-24

    We report on the fabrication of gallium arsenide (GaAs)/air distributed Bragg reflector microresonators with indium gallium arsenide quantum wells. The structures are studied via momentum resolved photoluminescence spectroscopy which allows us to investigate a pronounced optical mode quantization of the photonic dispersion. We can extract a length parameter from these quantized states whose upper limit can be connected to the lateral physical extension of the microcavity via analytical calculations. Laser emission from our microcavity under optical pumping is observed in power dependent investigations.

  5. Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

    SciTech Connect (OSTI)

    Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae; Oh, Byung Su; Joo, Min-Kyu; Ahn, Seung-Eon

    2014-12-28

    We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

  6. Growth of gallium nitride films via the innovative technique of atomic-layer epitaxy. Annual progress report, 1 June 1987-31 May 1988

    SciTech Connect (OSTI)

    Davis, R.F.; Paisley, M.J.; Sitar, Z.

    1988-06-01

    Gallium nitride (GaN) is a wide-bandgap (3.45 eV at 300K) III-V compound semiconductor. The large direct bandgap and high electron-drift velocity of GaN are important properties in the performance of short-wavelength optical devices and high-power microwave devices. Immediate applications that would be greatly enhanced by the availability of GaN and/or Al/sub x/Ga/sub 1-x/N devices include threat warning systems (based on the ultraviolet (UV) emission from the exhaust plumes of missiles) and radar systems (which require high-power microwave generation). Important future applications for devices produced from these materials include blue and ultraviolet semiconductor lasers, blue-light-emitting diodes (LEDs) and high temperature electronic devices. This report discusses this material.

  7. Results from Coupled Optical and Electrical Sentaurus TCAD Models of a Gallium Phosphide on Silicon Electron Carrier Selective Contact Solar Cell

    SciTech Connect (OSTI)

    Limpert, Steven; Ghosh, Kunal; Wagner, Hannes; Bowden, Stuart; Honsberg, Christiana; Goodnick, Stephen; Bremner, Stephen; Green, Martin

    2014-06-09

    We report results from coupled optical and electrical Sentaurus TCAD models of a gallium phosphide (GaP) on silicon electron carrier selective contact (CSC) solar cell. Detailed analyses of current and voltage performance are presented for devices having substrate thicknesses of 10 μm, 50 μm, 100 μm and 150 μm, and with GaP/Si interfacial quality ranging from very poor to excellent. Ultimate potential performance was investigated using optical absorption profiles consistent with light trapping schemes of random pyramids with attached and detached rear reflector, and planar with an attached rear reflector. Results indicate Auger-limited open-circuit voltages up to 787 mV and efficiencies up to 26.7% may be possible for front-contacted devices.

  8. Realization of write-once-read-many-times memory device with O{sub 2} plasma-treated indium gallium zinc oxide thin film

    SciTech Connect (OSTI)

    Liu, P. Chen, T. P. Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2014-01-20

    A write-once-read-many-times (WORM) memory devices based on O{sub 2} plasma-treated indium gallium zinc oxide (IGZO) thin films has been demonstrated. The device has a simple Al/IGZO/Al structure. The device has a normally OFF state with a very high resistance (e.g., the resistance at 2?V is ?10{sup 9} ? for a device with the radius of 50??m) as a result of the O{sub 2} plasma treatment on the IGZO thin films. The device could be switched to an ON state with a low resistance (e.g., the resistance at 2?V is ?10{sup 3} ? for the radius of 50??m) by applying a voltage pulse (e.g., 10?V/1??s). The WORM device has good data-retention and reading-endurance capabilities.

  9. Preliminary materials assessment for the Satellite Power System (SPS)

    SciTech Connect (OSTI)

    Teeter, R.R.; Jamieson, W.M.

    1980-01-01

    Presently, there are two SPS reference design concepts (one using silicon solar cells; the other using gallium arsenide solar cells). A materials assessment of both systems was performed based on the materials lists set forth in the DOE/NASA SPS Reference System Report: Concept Development and Evaluation Program. This listing identified 22 materials (plus miscellaneous and organics) used in the SPS. Tracing the production processes for these 22 materials, a total demand for over 20 different bulk materials (copper, silicon, sulfuric acid, etc.) and nealy 30 raw materials (copper ore, sand, sulfur ore, etc.) was revealed. Assessment of these SPS material requirements produced a number of potential material supply problems. The more serious problems are those associated with the solar cell materials (gallium, gallium arsenide, sapphire, and solar grade silicon), and the graphite fiber required for the satellite structure and space construction facilities. In general, the gallium arsenide SPS option exhibits more serious problems than the silicon option, possibly because gallium arsenide technology is not as well developed as that for silicon. Results are presented and discussed in detail. (WHK)

  10. The efficiency limit of CH{sub 3}NH{sub 3}PbI{sub 3} perovskite solar cells

    SciTech Connect (OSTI)

    Sha, Wei E. I.; Ren, Xingang; Chen, Luzhou; Choy, Wallace C. H.

    2015-06-01

    With the consideration of photon recycling effect, the efficiency limit of methylammonium lead iodide (CH{sub 3}NH{sub 3}PbI{sub 3}) perovskite solar cells is predicted by a detailed balance model. To obtain convincing predictions, both AM 1.5 spectrum of Sun and experimentally measured complex refractive index of perovskite material are employed in the detailed balance model. The roles of light trapping and angular restriction in improving the maximal output power of thin-film perovskite solar cells are also clarified. The efficiency limit of perovskite cells (without the angular restriction) is about 31%, which approaches to Shockley-Queisser limit (33%) achievable by gallium arsenide (GaAs) cells. Moreover, the Shockley-Queisser limit could be reached with a 200 nm-thick perovskite solar cell, through integrating a wavelength-dependent angular-restriction design with a textured light-trapping structure. Additionally, the influence of the trap-assisted nonradiative recombination on the device efficiency is investigated. The work is fundamentally important to high-performance perovskite photovoltaics.

  11. Integrated three-dimensional photonic nanostructures for achieving near-unity solar absorption and superhydrophobicity

    SciTech Connect (OSTI)

    Kuang, Ping; Lin, Shawn-Yu; Hsieh, Mei-Li

    2015-06-07

    In this paper, we proposed and realized 3D photonic nanostructures consisting of ultra-thin graded index antireflective coatings (ARCs) and woodpile photonic crystals. The use of the integrated ARC and photonic crystal structure can achieve broadband, broad-angle near unity solar absorption. The amorphous silicon based photonic nanostructure experimentally shows an average absorption of ∼95% for λ = 400–620 nm over a wide angular acceptance of θ = 0°–60°. Theoretical studies show that a Gallium Arsenide (GaAs) based structure can achieve an average absorption of >95% for λ = 400–870 nm. Furthermore, the use of the slanted SiO{sub 2} nanorod ARC surface layer by glancing angle deposition exhibits Cassie-Baxter state wetting, and superhydrophobic surface is obtained with highest water contact angle θ{sub CB} ∼ 153°. These properties are fundamentally important for achieving maximum solar absorption and surface self-cleaning in thin film solar cell applications.

  12. Controllable growth and optical properties of InP and InP/InAs nanostructures on the sidewalls of GaAs nanowires

    SciTech Connect (OSTI)

    Yan, Xin; Zhang, Xia Li, Junshuai; Cui, Jiangong; Ren, Xiaomin

    2014-12-07

    The growth and optical properties of InP and InP/InAs nanostructures on GaAs nanowires are investigated. InP quantum well and quantum dots (QDs) are formed on the sidewalls of GaAs nanowires successively with increasing the deposition time of InP. The GaAs/InP nanowire heterostructure exhibits a type-II band alignment. The wavelength of the InP quantum well is in the range of 857892?nm at 77?K, which means that the quantum well is nearly fully strained. The InP quantum dot, which has a bow-shaped cross section, exhibits dislocation-free pure zinc blende structure. Stranski-Krastanow InAs quantum dots are subsequently formed on the GaAs/InP nanowire core-shell structure. The InAs quantum dots are distributed over the middle part of the nanowire, indicating that the In atoms contributing to the quantum dots mainly come from the vapor rather than the substrate. The longest emission wavelength obtained from the InAs QDs is 1039?nm at 77?K. The linewidth is as narrow as 46.3?meV, which is much narrower than those on planar InP substrates and wurtzite InP nanowires, suggesting high-crystal-quality, phase-purity, and size-uniformity of quantum dots.

  13. Optical properties of multi-stacked InGaAs/GaNAs quantum dot solar cell fabricated on GaAs (311)B substrate

    SciTech Connect (OSTI)

    Shoji, Yasushi; Akimoto, Katsuhiro; Okada, Yoshitaka

    2012-09-15

    Quantum dot solar cells (QDSCs) comprised of 10 stacked pairs of strain-compensated InGaAs/GaNAs QD structure have been fabricated by atomic hydrogen-assisted molecular beam epitaxy. A homogeneous and high-density QD array structure with improved in-plane ordering and total density of {approx}10{sup 12} cm{sup -2} has been achieved on GaAs (311)B grown at 460 Degree-Sign C after stacking. The external quantum efficiency (EQE) of InGaAs/GaNAs QDSC increases in the longer wavelength range due to additive contribution from QD layers inserted in the intrinsic region. The short-circuit current density measured for QDSC is 17.2 mA/cm{sup 2} compared to 14.8 mA/cm{sup 2} of GaAs reference cell. Further, an increase in EQE due to photocurrent production by 2-step photon absorption has been observed at room temperature though it is still small at around 0.1%.

  14. Spatially resolved study of polarized micro-photoluminescence spectroscopy on single GaAs nanowires with mixed zincblende and wurtzite phases

    SciTech Connect (OSTI)

    Mukherjee, Amlan; Ghosh, Sandip; Breuer, Steffen; Jahn, Uwe; Geelhaar, Lutz; Grahn, Holger T.

    2015-02-07

    Localized and polarized photoluminescence spectra are observed in single GaAs nanowires with mixed zincblende and wurtzite phases, grown using molecular beam epitaxy. For low excitation intensities, the photoluminescence emission exhibits narrow spectral features predominantly polarized perpendicular to the nanowire axis. For high excitation intensities, the photoluminescence spectra transform into dominant broadened features, which exhibit different peak energies and polarization properties. The strongly polarized emission at high excitation intensities is identified as being due to a spatially direct transition in wurtzite sections of the nanowires. The analysis, including band structure calculations suggests that carriers in the wurtzite sections diffuse into regions where the average low-temperature peak emission energy and crystal field parameter are 1.535?eV and 20?meV, respectively.

  15. Independent dynamic acousto-mechanical and electrostatic control of individual quantum dots in a LiNbO{sub 3}-GaAs hybrid

    SciTech Connect (OSTI)

    Pustiowski, Jens; Müller, Kai; Bichler, Max; Koblmüller, Gregor; Finley, Jonathan J.; Wixforth, Achim; Krenner, Hubert J.

    2015-01-05

    We demonstrate tuning of single quantum dot emission lines by the combined action of the dynamic acoustic field of a radio frequency surface acoustic wave and a static electric field. Both tuning parameters are set all-electrically in a LiNbO{sub 3}-GaAs hybrid device. The surface acoustic wave is excited directly on the strong piezoelectric LiNbO{sub 3} onto which a GaAs-based p-i-n photodiode containing a single layer of quantum dots was epitaxially transferred. We demonstrate dynamic spectral tuning with bandwidths exceeding 3 meV of single quantum dot emission lines due to deformation potential coupling. The center energy of the dynamic spectral oscillation can be independently programmed simply by setting the bias voltage applied to the diode.

  16. Critical size for the generation of misfit dislocations and their effects on electronic properties in GaAs nanosheets on Si substrate

    SciTech Connect (OSTI)

    Yuan, Zaoshi; Department of Chemical Engineering, Stanford University, Stanford, California 94305-5025 ; Shimamura, Kohei; Department of Physics, Kumamoto University, Kumamoto 860-8555; Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka 819-0395 ; Shimojo, Fuyuki; Department of Physics, Kumamoto University, Kumamoto 860-8555 ; Nakano, Aiichiro

    2013-08-21

    While nanowires and nanosheets (NSs) grown on lattice-mismatched substrates have a number of promising technological applications such as solar cells, generation of misfit dislocations (MFDs) at their interfaces is a major concern for the efficiency of these devices. Here, combined molecular-dynamics and quantum-mechanical simulations are used to study MFDs at the interface between a GaAs NS and a Si substrate. Simulation results show the existence of a critical NS thickness, below which NSs are grown free of MFDs. The calculated critical thickness value is consistent with available experimental observations. Charge transfer at the MFD core is found to modify the electronic band profile at the GaAs/Si interface significantly. These effects should have profound impacts on the efficiency of lattice-mismatched NS devices.

  17. Longer than 1.9 μm photoluminescence emission from InAs quantum structure on GaAs (001) substrate

    SciTech Connect (OSTI)

    Liu, Ke; Ma, Wenquan Huang, Jianliang; Zhang, Yanhua; Cao, Yulian; Huang, Wenjun; Luo, Shuai; Yang, Tao

    2015-07-27

    We report on photoluminescence (PL) emission with long wavelength for quantum structure by the sub-monolayer (SML) growth technique on GaAs (001) substrate. It is found that the PL emission wavelength can be controlled by controlling the SML InAs deposition amount. At 12 K, the PL peak position of the grown samples changes from about 1.66 to 1.78 μm. At 120 K, the PL emission of a sample reaches 1.91 μm. The physical mechanism responsible for the measured long wavelength PL emission may be related to strong In segregation and intermixing effects occurred in the structure grown by SML growth technique.

  18. InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

    SciTech Connect (OSTI)

    Alonso-lvarez, D.; Thomas, T.; Fhrer, M.; Hylton, N. P.; Ekins-Daukes, N. J.; Lackner, D.; Philipps, S. P.; Bett, A. W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.

    2014-08-25

    Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6 misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1??s, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

  19. Current flow and potential efficiency of solar cells based on GaAs and GaSb p-n junctions

    SciTech Connect (OSTI)

    Andreev, V. M.; Evstropov, V. V.; Kalinovsky, V. S. Lantratov, V. M.; Khvostikov, V. P.

    2009-05-15

    Dependence of the efficiency of single-junction and multijunction solar cells on the mechanisms of current flow in photoactive p-n junctions, specifically on the form of the dark current-voltage characteristic J-V, has been studied. The resistanceless J-V{sub j} characteristic (with the series resistance disregarded) of a multijunction solar cell has the same shape as the characteristic of a single-junction cell: both feature a set of exponential portions. This made it possible to develop a unified analytical method for calculating the efficiency of singlejunction and multijunction solar cells. The equation relating the efficiency to the photogenerated current at each portion of the J-V{sub j} characteristic is derived. For p-n junctions in GaAs and GaSb, the following characteristics were measured: the dark J-V characteristic, the dependence of the open-circuit voltage on the illumination intensity P-V{sub OC}, and the dependence of the luminescence intensity on the forward current L-J. Calculated dependences of potential efficiency (under idealized condition for equality to unity of external quantum yield) on the photogenerated current for single-junction GaAs and GaSb solar cells and a GaAs/GaSb tandem are plotted. The form of these dependences corresponds to the shape of J-V{sub j} characteristics: there are the diffusion- and recombination-related portions; in some cases, the tunneling-trapping portion is also observed. At low degrees of concentration of solar radiation (C < 10), an appreciable contribution to photogenerated current is made by recombination component. It is an increase in this component in the case of irradiation with 6.78-MeV protons or 1-MeV electrons that brings about a decrease in the efficiency of conversion of unconcentrated solar radiation.

  20. A Mechanistic Study of CO2 Reduction at the Interface of a Gallium Phosphide (GaP) Surface using Core-level Spectroscopy - Oral Presentation

    SciTech Connect (OSTI)

    Flynn, Kristen

    2015-08-19

    Carbon dioxide (CO2) emission into the atmosphere has increased tremendously through burning of fossil fuels, forestry, etc.. The increased concentration has made CO2 reductions very attractive though the reaction is considered uphill. Utilizing the sun as a potential energy source, CO2 has the possibility to undergo six electron and four proton transfers to produce methanol, a useable resource. This reaction has been shown to occur selectively in an aqueous pyridinium solution with a gallium phosphide (GaP) electrode. Though this reaction has a high faradaic efficiency, it was unclear as to what role the GaP surface played during the reaction. In this work, we aim to address the fundamental role of GaP during the catalytic conversion, by investigating the interaction between a clean GaP surface with the reactants, products, and intermediates of this reaction using X-ray photoelectron spectroscopy. We have determined a procedure to prepare atomically clean GaP and our initial CO2 adsorption studies have shown that there is evidence of chemisorption and reaction to form carbonate on the clean surface at LN2 temperatures (80K), in contrast to previous theoretical calculations. These findings will enable future studies on CO2 catalysis.

  1. A Mechanistic Study of CO2 Reduction at the Interface of a Gallium Phosphide (GaP) Surface using Core-level Spectroscopy

    SciTech Connect (OSTI)

    Flynn, Kristen

    2015-08-18

    Carbon dioxide (CO2) emission into the atmosphere has increased tremendously through burning of fossil fuels, forestry, etc.. The increased concentration has made CO2 reductions very attractive though the reaction is considered uphill. Utilizing the sun as a potential energy source, CO2 has the possibility to undergo six electron and four proton transfers to produce methanol, a useable resource. This reaction has been shown to occur selectively in an aqueous pyridinium solution with a gallium phosphide (GaP) electrode. Though this reaction has a high faradaic efficiency, it was unclear as to what role the GaP surface played during the reaction. In this work, we aim to address the fundamental role of GaP during the catalytic conversion, by investigating the interaction between a clean GaP surface with the reactants, products, and intermediates of this reaction using X-ray photoelectron spectroscopy. We have determined a procedure to prepare atomically clean GaP and our initial CO2 adsorption studies have shown that there is evidence of chemisorption and reaction to form carbonate on the clean surface at LN2 temperatures (80K), in contrast to previous theoretical calculations. These findings will enable future studies on CO2 catalysis.

  2. Research Cell Efficiency Records

    Broader source: Energy.gov [DOE]

    The National Renewable Energy Laboratory maintains a plot of compiled values of highest confirmed conversion efficiencies for research cells, from 1976 to the present, for a range of photovoltaic technologies. This chart highlights cell efficiency results within different families of semiconductors: (1) multijunction cells, (2) single-junction gallium arsenide cells, (3) crystalline silicon cells, (4) thinfilm technologies, and (5) emerging photovoltaics.

  3. Time-resolved photoluminescence of ytterbium in indium phosphide. Master's thesis

    SciTech Connect (OSTI)

    Bumgarner, T.F.

    1988-12-01

    Time-resolved photoluminescence of ytterbium (Yb) implanted in indium phosphide (Inp) was the primary emphasis of this research. The decay lifetimes of the 1002-nm Yb emission were investigated as a function of temperature. Initial attempts were made to investigate as a function of temperature. Initial attempts were made to investigate aluminum gallium arsenide (AlGaAs) implanted with ytterbium.

  4. Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

    SciTech Connect (OSTI)

    Lee, Eunji; Chowdhury, Md Delwar Hossain; Park, Min Sang; Jang, Jin

    2015-12-07

    We have studied the effect of top gate bias (V{sub TG}) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm{sup 2} intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the V{sub TG} from −15 to +15 V. By changing V{sub TG} from negative to positive, the Fermi level (E{sub F}) shifts toward conduction band edge (E{sub C}), which substantially controls the conversion of neutral vacancy to charged one (V{sub O} → V{sub O}{sup +}/V{sub O}{sup 2+} + e{sup −}/2e{sup −}), peroxide (O{sub 2}{sup 2−}) formation or conversion of ionized interstitial (O{sub i}{sup 2−}) to neutral interstitial (O{sub i}), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows −2.7 V shift at V{sub TG} = −15 V, which gradually decreases to −0.42 V shift at V{sub TG} = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (V{sub O}{sup +}/V{sub O}{sup 2+}/O{sub 2}{sup 2−}/O{sub i}) and/or hole trapping in the a-IGZO /interfaces.

  5. Theory of the electronic structure of dilute bismide and bismide-nitride alloys of GaAs: Tight-binding and k.p models

    SciTech Connect (OSTI)

    Usman, Muhammad; Broderick, Christopher A.; O'Reilly, Eoin P.

    2013-12-04

    The addition of dilute concentrations of bismuth (Bi) into GaAs to form GaBi{sub x}As{sub 1?x} alloys results in a large reduction of the band gap energy (E{sub g}) accompanied by a significant increase of the spin-orbit-splitting energy (?{sub SO}), leading to an E{sub g} < ?{sub SO} regime for x ? 10% which is technologically relevant for the design of highly efficient photonic devices. The quaternary alloy GaBi{sub x}N{sub y}As{sub 1?x?y} offers further flexibility for band gap tuning, because both nitrogen and bismuth can independently induce band gap reduction. This work reports sp{sup 3}s* tight binding and 14-band k?p models for the study of the electronic structure of GaBi{sub x}As{sub 1?x} and GaBi{sub x}N{sub y}As{sub 1?x?y} alloys. Our results are in good agreement with the available experimental data.

  6. Electronic structures and magnetic stabilities of 2D Mn-doped GaAs nanosheets: The role of long-range exchange interactions and doping strategies

    SciTech Connect (OSTI)

    Lan, Mu; Xiang, Gang Zhang, Xi

    2014-08-28

    We investigate the structural, electronic and magnetic properties of Mn atoms doped two-dimensional (2D) hexagonal GaAs nanosheets (GaAsNSs) using both first-principle calculations and Monte Carlo simulations. The first-principle molecular dynamics is first used to test the structural stability of Mn-doped GaAsNS ((Ga,Mn)AsNS). The analysis of spin-resolved electronic structures and determination of magnetic exchange interactions based on density functional theory (DFT) calculations reveals the existence of long-range exchange interaction in the system. Finally, Metropolis Monte Carlo simulation is employed to estimate Curie temperatures (T{sub C}s) of (Ga,Mn)AsNSs with different doping concentrations by different doping strategies. The results indicate that a T{sub C} up to 82 K can be obtained in regularly-doped (Ga,Mn)AsNSs and doping strategies have prominent impact on T{sub C}s of the systems, which emphasizes the importance of both long-range interactions and doping strategies in reduced dimensional diluted magnetic semiconductors (DMSs)

  7. Direct observation of oxygen-vacancy-enhanced polarization in a SrTiO3-buffered ferroelectric BaTiO3 film on GaAs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qiao, Q.; Zhang, Y.; Contreras-Guerrero, Rocio; Droopad, Ravi; Pantelides, S. T.; Pennycook, Stephen J.; Ogut, Serdar; Klie, Robert F.

    2015-11-16

    The integration of functional oxide thin-films on compound semiconductors can lead to a class of reconfigurable spin-based optoelectronic devices if defect-free, fully reversible active layers are stabilized. However, previous first-principles calculations predicted that SrTiO3 thin filmsgrown on Si exhibit pinned ferroelectric behavior that is not switchable, due to the presence of interfacial vacancies. Meanwhile, piezoresponse force microscopy measurements have demonstrated ferroelectricity in BaTiO3 grown on semiconductor substrates. The presence of interfacial oxygen vacancies in such complex-oxide/semiconductor systems remains unexplored, and their effect on ferroelectricity is controversial. We also use a combination of aberration-corrected scanning transmission electron microscopy and first-principles densitymore » functional theory modeling to examine the role of interfacial oxygen vacancies on the ferroelectricpolarization of a BaTiO3 thin filmgrown on GaAs. Moreover, we demonstrate that interfacial oxygen vacancies enhance the polar discontinuity (and thus the single domain, out-of-plane polarization pinning in BaTiO3), and propose that the presence of surface charge screening allows the formation of switchable domains.« less

  8. The currentvoltage and capacitancevoltage characteristics at high temperatures of Au Schottky contact to n-type GaAs

    SciTech Connect (OSTI)

    zerli, Halil; Karteri, ?brahim; Karata?, ?kr; Altindal, ?emsettin

    2014-05-01

    Highlights: The electronic parameters of the diode under temperature were investigated. The barrier heights have a Gaussian distribution. Au/n-GaAs diode exhibits a rectification behavior. - Abstract: We have investigated the temperature-dependent currentvoltage (IV) and capacitancevoltage (CV) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs) in the temperature range of 280415 K. The barrier height for the Au/n-type GaAs SBDs from the IV and CV characteristics have varied from 0.901 eV to 0.963 eV (IV) and 1.234 eV to 0.967 eV (CV), and the ideality factor (n) from 1.45 to 1.69 in the temperature range 280415 K. The conventional Richardson plots are found to be linear in the temperature range measured. Both the ln(I{sub 0}/T{sup 2}) versus (kT){sup ?1} and ln(I{sub 0}/T{sup 2}) versus (nkT){sup ?1} plots gives a straight line corresponding to activation energies 0.773 eV and 0.870 eV, respectively. A ?{sub b0} versus 1/T plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and values of ?{sup }{sub b0} = 1.071 eV and ?{sub 0} = 0.094 V for the mean BH and zero-bias standard deviation have been obtained from this plot.

  9. Structural and band alignment properties of Al{sub 2}O{sub 3} on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y.; Maurya, D.; Priya, S.; Patra, P. K.; Ma, A. W. K.; Aphale, A.; Macwan, I.

    2013-04-07

    Structural and band alignment properties of atomic layer Al{sub 2}O{sub 3} oxide film deposited on crystallographically oriented epitaxial Ge grown in-situ on (100), (110), and (111)A GaAs substrates using two separate molecular beam epitaxy chambers were investigated using cross-sectional transmission microscopy (TEM) and x-ray photoelectron spectroscopy (XPS). High-resolution triple axis x-ray measurement demonstrated pseudomorphic and high-quality Ge epitaxial layer on crystallographically oriented GaAs substrates. The cross-sectional TEM exhibited a sharp interface between the Ge epilayer and each orientation of the GaAs substrate as well as the Al{sub 2}O{sub 3} film and the Ge epilayer. The extracted valence band offset, {Delta}E{sub v}, values of Al{sub 2}O{sub 3} relative to (100), (110), and (111) Ge orientations using XPS measurement were 3.17 eV, 3.34 eV, and 3.10 eV, respectively. Using XPS data, variations in {Delta}E{sub v} related to the crystallographic orientation were {Delta}E{sub V}(110)Ge>{Delta}E{sub V}(100)Ge{>=}{Delta}E{sub V}(111)Ge and the conduction band offset, {Delta}E{sub c}, related to the crystallographic orientation was {Delta}E{sub c}(111)Ge>{Delta}E{sub c}(110)Ge>{Delta}E{sub c}(100)Ge using the measured {Delta}E{sub v}, bandgap of Al{sub 2}O{sub 3} in each orientation, and well-known Ge bandgap of 0.67 eV. These band offset parameters are important for future application of Ge-based p- and n-channel metal-oxide field-effect transistor design.

  10. Molecular beam epitaxial growth of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

    SciTech Connect (OSTI)

    Zeng, Zhaoquan; Morgan, Timothy A.; Li, Chen; Hirono, Yusuke; Hu, Xian; Hawkridge, Michael E.; Benamara, Mourad; Salamo, Gregory J.; Fan, Dongsheng; Yu, Shuiqing; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701 ; Zhao, Yanfei; Lee, Joon Sue; Wang, Jian; The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, PA 16802 ; Wang, Zhiming M.; State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054; Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083

    2013-07-15

    High quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films. Hall and magnetoresistance measurements indicate that p type Sb{sub 2}Te{sub 3} and n type Bi{sub 2}Te{sub 3} topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

  11. Summer 2011 Intern Project- Eric Ling | Center for Energy Efficient

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materials Eric Ling THERMOELECTRIC PROPERTIES OF DOPED InGaAs Eric Ling Physics and Mathamatics UC Santa Barbara Mentor: Borzoyeh Shojaei Faculty Advisor: Chris Pamlstrom Department: Electrical and Computer Engineering In recent history, thermeoelectrics have shown to be promising materials for energy conversion via wasted heat to electricity. One such material, indium gallium arsenide (InGaAs), may possess a high electrical conductivity term in the thermoelectric figure of merit when doped

  12. Longitudinal spin Seebeck effect in Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} prepared on gadolinium gallium garnet (001) by metal organic decomposition method

    SciTech Connect (OSTI)

    Asada, H. Kuwahara, A.; Sakata, N.; Ono, T.; Kishimoto, K.; Koyanagi, T.; Ishibashi, T.; Meguro, A.; Hashinaka, T.

    2015-05-07

    Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} thin films with the Ga composition x = 0, 0.5, and 1.0 are prepared on (001) oriented gadolinium gallium garnet substrates by a metal organic decomposition method. Only (001) peaks are observed in x-ray diffraction patterns for all the films, suggesting that the highly oriented Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} thin films were formed. Increasing Ga composition, the saturation magnetization decreases, and the perpendicular easy axis is enhanced due to the decrease of the shape anisotropy. Longitudinal spin Seebeck effects (LSSEs) in Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} thin films with a Pt layer of 10 nm in thickness were investigated. Magnetic field dependence of the thermoelectric voltage caused by the LSSE in Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} films indicates the hysteresis loop with the small coercivity reflecting the magnetization curve. The decrease of LSSE voltage in Nd{sub 2}BiFe{sub 5−x}Ga{sub x}O{sub 12} is clearly observed with the decrease of Fe composition.

  13. Carrier transfer from InAs quantum dots to ErAs metal nanoparticles

    SciTech Connect (OSTI)

    Haughn, C. R.; Chen, E. Y.; Zide, J. M. O.; Doty, M. F.; Steenbergen, E. H.; Bissell, L. J.; Eyink, K. G.

    2014-09-08

    Erbium arsenide (ErAs) is a semi-metallic material that self-assembles into nanoparticles when grown in GaAs via molecular beam epitaxy. We use steady-state and time-resolved photoluminescence to examine the mechanism of carrier transfer between indium arsenide (InAs) quantum dots and ErAs nanoparticles in a GaAs host. We probe the electronic structure of the ErAs metal nanoparticles (MNPs) and the optoelectronic properties of the nanocomposite and show that the carrier transfer rates are independent of pump intensity. This result suggests that the ErAs MNPs have a continuous density of states and effectively act as traps. The absence of a temperature dependence tells us that carrier transfer from the InAs quantum dots to ErAs MNPs is not phonon assisted. We show that the measured photoluminescence decay rates are consistent with a carrier tunneling model.

  14. Improving the efficiency of copper indium gallium (Di-)selenide (CIGS) solar cells through integration of a moth-eye textured resist with a refractive index similar to aluminum doped zinc oxide

    SciTech Connect (OSTI)

    Burghoorn, M.; Kniknie, B.; Deelen, J. van; Ee, R. van; Xu, M.; Vroon, Z.; Belt, R. van de; Buskens, P. E-mail: buskens@dwi.rwth-aachen.de

    2014-12-15

    Textured transparent conductors are widely used in thin-film silicon solar cells. They lower the reflectivity at interfaces between different layers in the cell and/or cause an increase in the path length of photons in the Si absorber layer, which both result in an increase in the number of absorbed photons and, consequently, an increase in short-circuit current density (J{sub sc}) and cell efficiency. Through optical simulations, we recently obtained strong indications that texturing of the transparent conductor in copper indium gallium (di-)selenide (CIGS) solar cells is also optically advantageous. Here, we experimentally demonstrate that the J{sub sc} and efficiency of CIGS solar cells with an absorber layer thickness (d{sub CIGS}) of 0.85 μm, 1.00 μm and 2.00 μm increase through application of a moth-eye textured resist with a refractive index that is sufficiently similar to AZO (n{sub resist} = 1.792 vs. n{sub AZO} = 1.913 at 633 nm) to avoid large optical losses at the resist-AZO interface. On average, J{sub sc} increases by 7.2%, which matches the average reduction in reflection of 7.0%. The average relative increase in efficiency is slightly lower (6.0%). No trend towards a larger relative increase in J{sub sc} with decreasing d{sub CIGS} was observed. Ergo, the increase in J{sub sc} can be fully explained by the reduction in reflection, and we did not observe any increase in J{sub sc} based on an increased photon path length.

  15. Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)

    SciTech Connect (OSTI)

    Bremner, S. P.; Ban, K.-Y.; Faleev, N. N.; Honsberg, C. B.; Smith, D. J.

    2013-09-14

    We describe InAs quantum dot creation in InAs/GaAsSb barrier structures grown on GaAs (001) wafers by molecular beam epitaxy. The structures consist of 20-nm-thick GaAsSb barrier layers with Sb content of 8%, 13%, 15%, 16%, and 37% enclosing 2 monolayers of self-assembled InAs quantum dots. Transmission electron microscopy and X-ray diffraction results indicate the onset of relaxation of the GaAsSb layers at around 15% Sb content with intersected 60° dislocation semi-loops, and edge segments created within the volume of the epitaxial structures. 38% relaxation of initial elastic stress is seen for 37% Sb content, accompanied by the creation of a dense net of dislocations. The degradation of In surface migration by these dislocation trenches is so severe that quantum dot formation is completely suppressed. The results highlight the importance of understanding defect formation during stress relaxation for quantum dot structures particularly those with larger numbers of InAs quantum-dot layers, such as those proposed for realizing an intermediate band material.

  16. Direct observation of oxygen-vacancy-enhanced polarization in a SrTiO3-buffered ferroelectric BaTiO3 film on GaAs

    SciTech Connect (OSTI)

    Qiao, Q.; Zhang, Y.; Contreras-Guerrero, Rocio; Droopad, Ravi; Pantelides, S. T.; Pennycook, Stephen J.; Ogut, Serdar; Klie, Robert F.

    2015-11-16

    The integration of functional oxide thin-films on compound semiconductors can lead to a class of reconfigurable spin-based optoelectronic devices if defect-free, fully reversible active layers are stabilized. However, previous first-principles calculations predicted that SrTiO3 thin filmsgrown on Si exhibit pinned ferroelectric behavior that is not switchable, due to the presence of interfacial vacancies. Meanwhile, piezoresponse force microscopy measurements have demonstrated ferroelectricity in BaTiO3 grown on semiconductor substrates. The presence of interfacial oxygen vacancies in such complex-oxide/semiconductor systems remains unexplored, and their effect on ferroelectricity is controversial. We also use a combination of aberration-corrected scanning transmission electron microscopy and first-principles density functional theory modeling to examine the role of interfacial oxygen vacancies on the ferroelectricpolarization of a BaTiO3 thin filmgrown on GaAs. Moreover, we demonstrate that interfacial oxygen vacancies enhance the polar discontinuity (and thus the single domain, out-of-plane polarization pinning in BaTiO3), and propose that the presence of surface charge screening allows the formation of switchable domains.

  17. Effect of spacer layer thickness on multi-stacked InGaAs quantum dots grown on GaAs (311)B substrate for application to intermediate band solar cells

    SciTech Connect (OSTI)

    Shoji, Yasushi; Narahara, Kohei; Okada, Yoshitaka; Tanaka, Hideharu; Kita, Takashi; Akimoto, Katsuhiro

    2012-04-01

    We have investigated the properties of multi-stacked layers of self-organized In{sub 0.4}Ga{sub 0.6}As quantum dots (QDs) on GaAs (311)B grown by molecular beam epitaxy. We found that a high degree of in-plane ordering of QDs structure with a six-fold symmetry was maintained though the growth has been performed at a higher growth rate than the conventional conditions. The dependence of photoluminescence characteristics on spacer layer thickness showed an increasing degree of electronic coupling between the stacked QDs for thinner spacer layers. The external quantum efficiency for an InGaAs/GaAs quantum dot solar cell (QDSC) with a thin spacer layer thickness increased in the longer wavelength range due to additive contribution from QD layers inserted in the intrinsic region. Furthermore, a photocurrent production by 2-step photon absorption has been observed at room temperature for the InGaAs/GaAs QDSC with a spacer layer thickness of 15 nm.

  18. Study of a MHEMT heterostructure with an In{sub 0.4}Ga{sub 0.6}As channel MBE-grown on a GaAs substrate using reciprocal space mapping

    SciTech Connect (OSTI)

    Aleshin, A. N. Bugaev, A. S.; Ermakova, M. A.; Ruban, O. A.

    2015-08-15

    The crystallographic characteristics of the design elements of a metamorphic high-electron-mobility (MHEMT) heterostructure with an In{sub 0.4}Ga{sub 0.6}As channel are determined based on reciprocal space mapping. The heterostructure is grown by molecular beam epitaxy on the vicinal surface of a GaAs substrate with a deviation angle from the (001) plane of 2° and consists of a stepped metamorphic buffer containing six layers including an inverse step, a high-temperature buffer layer with constant composition, and active HEMT layers. The InAs content in the layers of the metamorphic buffer is varied from 0.1 to 0.48. Reciprocal space maps are constructed for the (004) symmetric reflection and (224)+ asymmetric reflection. It is found that the heterostructure layers are characterized both by a tilt angle relative to the plane of the (001) substrate and a rotation angle around the [001] axis. The tilt angle of the layer increases as the InAs concentration in the layer increases. It is shown that a high-temperature buffer layer of constant composition has the largest degree of relaxation compared with all other layers of the heterostructure.

  19. Gallium composition dependence of crystallographic and thermoelectric properties in polycrystalline type-I Ba{sub 8}Ga{sub x}Si{sub 46-x} (nominal x=14-18) clathrates prepared by combining arc melting and spark plasma sintering methods

    SciTech Connect (OSTI)

    Anno, Hiroaki; JST, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 ; Yamada, Hiroki; Nakabayashi, Takahiro; Hokazono, Masahiro; Shirataki, Ritsuko; JST, CREST, 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075

    2012-09-15

    The gallium composition dependence of crystallographic and thermoelectric properties in polycrystalline n-type Ba{sub 8}Ga{sub x}Si{sub 46-x} (nominal x=14-18) compounds with the type-I clathrate structure is presented. Samples were prepared by combining arc melting and spark plasma sintering methods. Powder x-ray diffraction, Rietveld analysis, scanning electron microscopy, and energy-dispersive x-ray spectroscopy show that the solubility limit of gallium in the type-I clathrate phase is close to x=15, which is slightly higher than that for a single crystal. The carrier concentration at room temperature decreases from 2 Multiplication-Sign 10{sup 21} cm{sup -3} to 4 Multiplication-Sign 10{sup 20} cm{sup -3} as the Ga content x increases. The Seebeck coefficient, the electrical conductivity, and the thermal conductivity vary systematically with the carrier concentration when the Ga content x varies. The effective mass (2.0m{sub 0}), the carrier mobility (10 cm{sup 2} V{sup -1} s{sup -1}), and the lattice thermal conductivity (1.1 W m{sup -1} K{sup -1}) are determined for the Ga content x=14.51. The dimensionless thermoelectric figure of merit ZT is about 0.55 at 900 K for the Ga content x=14.51. The calculation of ZT using the experimentally determined material parameters predicts ZT=0.8 (900 K) at the optimum carrier concentration of about 2 Multiplication-Sign 10{sup 20} cm{sup -3}. - Graphical abstract: The gallium composition dependence of crystallographic and thermoelectric properties is presented on polycrystalline n-type Ba{sub 8}Ga{sub x}Si{sub 46-x} with the type-I clathrate structure prepared by combining arc melting and spark plasma sintering methods. The thermoelectric figure of merit ZT reaches 0.55 at 900 K due to the increase in the Ga content (close to x=15), and a calculation predicts further improvement of ZT at the optimized carrier concentration. Highlights: Black-Right-Pointing-Pointer Crystallographic properties of Ba{sub 8}Ga{sub x}Si{sub 46

  20. Superconductive silicon nanowires using gallium beam lithography.

    SciTech Connect (OSTI)

    Henry, Michael David; Jarecki, Robert Leo,

    2014-01-01

    This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

  1. Smooth cubic commensurate oxides on gallium nitride

    SciTech Connect (OSTI)

    Paisley, Elizabeth A.; Gaddy, Benjamin E.; LeBeau, James M.; Shelton, Christopher T.; Losego, Mark D.; Mita, Seiji; Collazo, Ramn; Sitar, Zlatko; Irving, Douglas L.; Maria, Jon-Paul; Biegalski, Michael D.; Christen, Hans M.

    2014-02-14

    Smooth, commensurate alloys of ?111?-oriented Mg{sub 0.52}Ca{sub 0.48}O (MCO) thin films are demonstrated on Ga-polar, c+ [0001]-oriented GaN by surfactant-assisted molecular beam epitaxy and pulsed laser deposition. These are unique examples of coherent cubic oxide|nitride interfaces with structural and morphological perfection. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100 reduction in leakage current density for the surfactant-assisted samples. HAADF-STEM images of the MCO|GaN interface show commensurate alignment of atomic planes with minimal defects due to lattice mismatch. STEM and DFT calculations show that GaN c/2 steps create incoherent boundaries in MCO over layers which manifest as two in-plane rotations and determine consequently the density of structural defects in otherwise coherent MCO. This new understanding of interfacial steps between HCP and FCC crystals identifies the steps needed to create globally defect-free heterostructures.

  2. Enthalpy of formation of gallium nitride

    SciTech Connect (OSTI)

    Ranade, M.R.; Tessier, F.; Navrotsky, A.; Leppert, V.J.; Risbud, S.H.; DiSalvo, F.J.; Balkas, C.M.

    2000-05-04

    A major discrepancy in the literature concerning the enthalpy of formation of GaN has been resolved using oxidative oxide melt solution calorimetry. Four samples of differing nitrogen contents were measured by dropping them into molten 3Na{sub 2}O{center_dot}4MoO{sub 3} in a calorimeter at 975 K with oxygen gas bubbling through the solvent. The samples were characterized by X-ray diffraction, chemical analysis, transmission electron microscopy, particle size analysis, and BET measurements. The enthalpy of drop solution (kJ/g) varied approximately linearly with nitrogen content. Extrapolated to stoichiometric GaN, the data yield a value of {minus}156.8 {+-} 16.0 kJ/mol for the standard enthalpy of formation from the elements at 298 K. The relatively large error reflects the deviation of individual points from the straight line rather than uncertainties in each set of data for a given sample. This new directly measured enthalpy of formation is in excellent agreement with that obtained from the temperature dependence of the equilibrium pressure of nitrogen over GaN, {minus}157.7 kJ/mol, measured by Madar et al. and Karpinski and Porowski. This value of {minus}156.8 kJ/mol should replace the commonly tabulated value of {minus}110 kJ/mol determined by Hahn and Juza using combustion calorimetry on an uncharacterized sample over 50 years ago.

  3. Copper Indium Gallium Diselenide | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Since its initial development, copper indium diselenide (CuInSe2) thin-film technology has been considered promising for solar cells because of its favorable electronic and optical ...

  4. Growth process for gallium nitride porous nanorods

    DOE Patents [OSTI]

    Wildeson, Isaac Harshman; Sands, Timothy David

    2015-03-24

    A GaN nanorod and formation method. Formation includes providing a substrate having a GaN film, depositing SiN.sub.x on the GaN film, etching a growth opening through the SiN.sub.x and into the GaN film, growing a GaN nanorod through the growth opening, the nanorod having a nanopore running substantially through its centerline. Focused ion beam etching can be used. The growing can be done using organometallic vapor phase epitaxy. The nanopore diameter can be controlled using the growth opening diameter or the growing step duration. The GaN nanorods can be removed from the substrate. The SiN.sub.x layer can be removed after the growing step. A SiO.sub.x template can be formed on the GaN film and the GaN can be grown to cover the SiO.sub.x template before depositing SiN.sub.x on the GaN film. The SiO.sub.x template can be removed after growing the nanorods.

  5. Thermophotovoltaic generators based on gallium antimonide

    SciTech Connect (OSTI)

    Khvostikov, V. P. Sorokina, S. V.; Potapovich, N. S.; Khvostikova, O. A.; Malievskaya, A. V.; Vlasov, A. S.; Shvarts, M. Z.; Timoshina, N. Kh.; Andreev, V. M.

    2010-02-15

    Designs of thermophotovoltaic (TPV) generators with infrared emitters heated by concentrated solar radiation are developed, fabricated, and tested. Emitters made of SiC, W, or Ta of various forms and sizes are studied. To the GaSb-based thermophotovoltaic cells, the efficiency of transformation of thermal radiation of W emitters was 19%. The features of operation of two variants of TPV generators, namely, of cylindrical and conical types, are considered. In a demonstration model of the TPV generator consisting of 12 photocells, the output electric power with conversion of the concentrated solar radiation was P = 3.8 W.

  6. The state of the art of thin-film photovoltaics

    SciTech Connect (OSTI)

    Surek, T.

    1993-10-01

    Thin-film photovoltaic technologies, based on materials such as amorphous or polycrystalline silicon, copper indium diselenide, cadmium telluride, and gallium arsenide, offer the potential for significantly reducing the cost of electricity generated by photovoltaics. The significant progress in the technologies, from the laboratory to the marketplace, is reviewed. The common concerns and questions raised about thin films are addressed. Based on the progress to date and the potential of these technologies, along with continuing investments by the private sector to commercialize the technologies, one can conclude that thin-film PV will provide a competitive alternative for large-scale power generation in the future.

  7. Interplay of light transmission and catalytic exchange current in photoelectrochemical systems

    SciTech Connect (OSTI)

    Fountaine, Katherine T.; Lewerenz, Hans J.; Atwater, Harry A.

    2014-10-27

    We develop an analytic current-voltage expression for a variable junction photoelectrochemical (PEC) cell and use it to investigate and illustrate the influence of the optical and electrical properties of catalysts on the optoelectronic performance of PEC devices. Specifically, the model enables a simple, yet accurate accounting of nanostructured catalyst optical and electrical properties through incorporation of an optical transmission factor and active catalytic area factor. We demonstrate the utility of this model via the output power characteristics of an exemplary dual tandem solar cell with indium gallium phosphide and indium gallium arsenide absorbers with varying rhodium catalyst nanoparticle loading. The approach highlights the importance of considering interactions between independently optimized components for optimal PEC device design.

  8. NMR evidence for inhomogeneous glassy behavior driven by nematic fluctuations in iron arsenide superconductors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dioguardi, A. P.; Lawson, M. M.; Bush, B. T.; Crocker, J.; Shirer, K. R.; Nisson, D. M.; Kissikov, T.; Ran, S.; Bud'ko, S. L.; Canfield, P. C.; et al

    2015-10-16

    We present 75As nuclear magnetic resonance spin-lattice and spin-spin relaxation rate data in Ba(Fe1–xCox)2As2 and Ba(Fe1–xCux)2As2 as a function of temperature, doping, and magnetic field. The relaxation curves exhibit a broad distribution of relaxation rates, consistent with inhomogeneous glassy behavior up to 100 K. The doping and temperature response of the width of the dynamical heterogeneity is similar to that of the nematic susceptibility measured by elastoresistance measurements. In this study, we argue that quenched random fields which couple to the nematic order give rise to a nematic glass that is reflected in the spin dynamics.

  9. NMR evidence for inhomogeneous glassy behavior driven by nematic fluctuations in iron arsenide superconductors

    SciTech Connect (OSTI)

    Dioguardi, A. P.; Lawson, M. M.; Bush, B. T.; Crocker, J.; Shirer, K. R.; Nisson, D. M.; Kissikov, T.; Ran, S.; Bud'ko, S. L.; Canfield, P. C.; Yuan, S.; Kuhns, P. L.; Reyes, A. P.; Grafe, H. -J.; Curro, N. J.

    2015-10-16

    We present 75As nuclear magnetic resonance spin-lattice and spin-spin relaxation rate data in Ba(Fe1–xCox)2As2 and Ba(Fe1–xCux)2As2 as a function of temperature, doping, and magnetic field. The relaxation curves exhibit a broad distribution of relaxation rates, consistent with inhomogeneous glassy behavior up to 100 K. The doping and temperature response of the width of the dynamical heterogeneity is similar to that of the nematic susceptibility measured by elastoresistance measurements. In this study, we argue that quenched random fields which couple to the nematic order give rise to a nematic glass that is reflected in the spin dynamics.

  10. Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors

    SciTech Connect (OSTI)

    Rajamohanan, Bijesh Mohata, Dheeraj; Hollander, Matthew; Datta, Suman; Zhu, Yan; Hudait, Mantu; Jiang, Zhengping; Klimeck, Gerhard

    2014-01-28

    In this paper, we demonstrate InAs/GaSb hetero-junction (hetJ) and GaSb homo-junction (homJ) p-channel tunneling field effect transistors (pTFET) employing a low temperature atomic layer deposited high-κ gate dielectric. HetJ pTFET exhibited drive current of 35 μA/μm in comparison to homJ pTFET, which exhibited drive current of 0.3 μA/μm at V{sub DS} = −0.5 V under DC biasing conditions. Additionally, with pulsing of 1 μs gate voltage, hetJ pTFET exhibited enhanced drive current of 85 μA/μm at V{sub DS} = −0.5 V, which is the highest reported in the category of III-V pTFET. Detailed device characterization was performed through analysis of the capacitance-voltage characteristics, pulsed current-voltage characteristics, and x-ray diffraction studies.

  11. This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

    DOE Patents [OSTI]

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  12. Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic In{sup 0.70}Al{sup 0.30}As/In{sup 0.76}Ga{sup 0.24}As/In{sup 0.70}Al{sup 0.30}As structures on GaAs substrates

    SciTech Connect (OSTI)

    Kulbachinskii, V. A.; Oveshnikov, L. N.; Lunin, R. A.; Yuzeeva, N. A.; Galiev, G. B.; Klimov, E. A.; Pushkarev, S. S.; Maltsev, P. P.

    2015-07-15

    The influence of construction of the buffer layer and misorientation of the substrate on the electrical properties of In{sup 0.70}Al{sup 0.30}As/In{sup 0.76}Ga{sup 0.24}As/In{sup 0.70}Al{sup 0.30}As quantum wells on a GaAs substrate is studied. The temperature dependences (in the temperature range of 4.2 K < T < 300 K) and field dependences (in magnetic fields as high as 6 T) of the sample resistances are measured. Anisotropy of the resistances in different crystallographic directions is detected; this anisotropy depends on the substrate orientation and construction of the metamorphic buffer layer. In addition, the Hall effect and the Shubnikov–de Haas effect are studied. The Shubnikov–de Haas effect is used to determine the mobilities of electrons separately in several occupied dimensionally quantized subbands in different crystallographic directions. The calculated anisotropy of mobilities is in agreement with experimental data on the anisotropy of the resistances.

  13. High Quality, Low Cost Bulk Gallium Nitride Substrates Grown...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of crystalline GaN growth in ESG Results and Accomplishments HRXRD vs reference SEM surface view 0 20 40 60 80 100 120 140 160 180 200 0 10 20 30 40 50 Deposition rate ...

  14. High-Quality, Low-Cost Bulk Gallium Nitride Substrates

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    achieving GaN bulk growth without the limitations of tradi- tional crystal growth methods. ... MEMC technology transfer and marketing staff are coordinating with the research team to ...

  15. Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices

    SciTech Connect (OSTI)

    Patibandla, Nag; Agrawal, Vivek

    2012-12-01

    Over the course of this program, Applied Materials, Inc., with generous support from the United States Department of Energy, developed a world-class three chamber III-Nitride epi cluster tool for low-cost, high volume GaN growth for the solid state lighting industry. One of the major achievements of the program was to design, build, and demonstrate the world’s largest wafer capacity HVPE chamber suitable for repeatable high volume III-Nitride template and device manufacturing. Applied Materials’ experience in developing deposition chambers for the silicon chip industry over many decades resulted in many orders of magnitude reductions in the price of transistors. That experience and understanding was used in developing this GaN epi deposition tool. The multi-chamber approach, which continues to be unique in the ability of the each chamber to deposit a section of the full device structure, unlike other cluster tools, allows for extreme flexibility in the manufacturing process. This robust architecture is suitable for not just the LED industry, but GaN power devices as well, both horizontal and vertical designs. The new HVPE technology developed allows GaN to be grown at a rate unheard of with MOCVD, up to 20x the typical MOCVD rates of 3{micro}m per hour, with bulk crystal quality better than the highest-quality commercial GaN films grown by MOCVD at a much cheaper overall cost. This is a unique development as the HVPE process has been known for decades, but never successfully commercially developed for high volume manufacturing. This research shows the potential of the first commercial-grade HVPE chamber, an elusive goal for III-V researchers and those wanting to capitalize on the promise of HVPE. Additionally, in the course of this program, Applied Materials built two MOCVD chambers, in addition to the HVPE chamber, and a robot that moves wafers between them. The MOCVD chambers demonstrated industry-leading wavelength yield for GaN based LED wafers and industry-leading uptime enabled in part by a novel in-situ cleaning process developed in this program.

  16. Size effects in the thermal conductivity of gallium oxide (β...

    Office of Scientific and Technical Information (OSTI)

    via this technique (8.8 3.4 W msup -1 Ksup -1) and large mean free paths compared ... with different metal transducers (Al, Au, and Au with a Ti wettingmore layer), we ...

  17. Vacancy-Induced Nanoscale Wire Structure in Gallium Selenide...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ways to exploit the novel properties that result are frontier areas of today's solid-state physics and materials science. However, before exploring and exploiting comes making....

  18. Convective Turbulence in Liquid Gallium and Sodium | Argonne...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    dynamics of the velocity field The figure displays streamlines of the two-dimensional skin friction field which was obtained right at the heated bottom plate of a cylindrical...

  19. Process for growing epitaxial gallium nitride and composite wafers

    DOE Patents [OSTI]

    Weber, Eicke R.; Subramanya, Sudhir G.; Kim, Yihwan; Kruger, Joachim

    2003-05-13

    A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.

  20. Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Fabrication of initial 405 nm semipolar LEDs is based on high-IQE structures identified by the experimental data. View the Presentation 2014 BTO Peer Review Presentation - ...

  1. Review of using gallium nitride for ionizing radiation detection...

    Office of Scientific and Technical Information (OSTI)

    Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210, USA, Department of Radiology, Stanford University, ...

  2. Traps identification in Copper-Indium-Gallium-Sulfur-Selenide...

    Office of Scientific and Technical Information (OSTI)

    Solar Cells Completed with Various Buffer Layers by Deep Level Transient Spectroscopy Current-voltage ... devices cells with high and low efficiencies were studied. ...

  3. Accelerated aging of GaAs concentrator solar cells

    SciTech Connect (OSTI)

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  4. Defect production during ion implantation of various A/sub III/B/sub V/ semiconductors

    SciTech Connect (OSTI)

    Wesch, W.; Wendler, E.; Goetz, G.; Kekelidse, N.P.

    1989-01-15

    The present paper gives a survey about the defect generation caused by ion implantation of GaAs, InAs, GaP, and InP. By combining Rutherford backscattering spectrometry, optical spectroscopy, and transmission electron microscopic methods, further information concerning the kinetics of the defect production as well as the type of defects created is obtained. Generally, the defect concentration in the region of implantation parameters investigated can be described by the energy density deposited into nuclear processes. Below critical values of the nuclear deposited energy density in GaAs weakly damaged layers containing point defects and point defect clusters are produced. With increasing nuclear deposited energy density an increasing number of amorphous zones is created due to manifold overlap of the initial defect clusters. The results indicate that in GaAs and InAs already at relatively low implantation temperatures, the amorphization occurs via homogeneous defect nucleation. The results obtained for GaP and InP, on the other hand, point at a remarkable contribution of heterogeneous defect nucleation already at room temperature, leading to amorphization at markedly lower nuclear deposited energy densities in spite of nearly identical values of the nuclear deposited energy. It is therefore concluded that defect recombination and annealing at room temperature is much less pronounced in the phosphides than in the arsenides.

  5. Mixed-RKDG Finite Element Methods for the 2-D Hydrodynamic Model for Semiconductor Device Simulation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chen, Zhangxin; Cockburn, Bernardo; Jerome, Joseph W.; Shu, Chi-Wang

    1995-01-01

    In this paper we introduce a new method for numerically solving the equations of the hydrodynamic model for semiconductor devices in two space dimensions. The method combines a standard mixed finite element method, used to obtain directly an approximation to the electric field, with the so-called Runge-Kutta Discontinuous Galerkin (RKDG) method, originally devised for numerically solving multi-dimensional hyperbolic systems of conservation laws, which is applied here to the convective part of the equations. Numerical simulations showing the performance of the new method are displayed, and the results compared with those obtained by using Essentially Nonoscillatory (ENO) finite difference schemes. Frommore » the perspective of device modeling, these methods are robust, since they are capable of encompassing broad parameter ranges, including those for which shock formation is possible. The simulations presented here are for Gallium Arsenide at room temperature, but we have tested them much more generally with considerable success.« less

  6. Picosecond x-ray strain rosette reveals direct laser excitation of coherent transverse acoustic phonons

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lee, Sooheyong; Williams, G. Jackson; Campana, Maria I.; Walko, Donald A.; Landahl, Eric C.

    2016-01-11

    Using a strain-rosette, we demonstrate the existence of transverse strain using time-resolved x-ray diffraction from multiple Bragg reflections in laser-excited bulk gallium arsenide. We find that anisotropic strain is responsible for a considerable fraction of the total lattice motion at early times before thermal equilibrium is achieved. Our measurements are described by a new model where the Poisson ratio drives transverse motion, resulting in the creation of shear waves without the need for an indirect process such as mode conversion at an interface. Finally, using the same excitation geometry with the narrow-gap semiconductor indium antimonide, we detected coherent transverse acousticmore » oscillations at frequencies of several GHz.« less

  7. Semiconductor Device Analysis on Personal Computers

    Energy Science and Technology Software Center (OSTI)

    1993-02-08

    PC-1D models the internal operation of bipolar semiconductor devices by solving for the concentrations and quasi-one-dimensional flow of electrons and holes resulting from either electrical or optical excitation. PC-1D uses the same detailed physical models incorporated in mainframe computer programs, yet runs efficiently on personal computers. PC-1D was originally developed with DOE funding to analyze solar cells. That continues to be its primary mode of usage, with registered copies in regular use at more thanmore » 100 locations worldwide. The program has been successfully applied to the analysis of silicon, gallium-arsenide, and indium-phosphide solar cells. The program is also suitable for modeling bipolar transistors and diodes, including heterojunction devices. Its easy-to-use graphical interface makes it useful as a teaching tool as well.« less

  8. NREL photovoltaic subcontract reports: Abstracts and document control information, 1 August 1991--31 July 1992

    SciTech Connect (OSTI)

    Not Available

    1992-08-01

    This report contains document control information and abstracts for the National Renewable Energy Laboratory (NREL) subcontracted photovoltaic program publications. It also lists source information on additional publications that describe US Department of Energy (DOE) PV research activities. It is not totally exhaustive, so it lists NREL contacts for requesting further information on the DOE and NREL PV programs. This report covers the period from August 1, 1991, through July 31, 1992. The purpose of continuing this type of publication is to help people keep abreast of specific PV interests, while maintaining a balance on the costs to the PV program. The information in this report is organized under PV technology areas: Amorphous silicon research; polycrystalline thin films (including copper indium diselenide, cadmium telluride, and thin-film silicon); crystalline materials and advanced concepts (including silicon, gallium arsenide, and other group III-V materials); and PV manufacturing technology development (which may include manufacturing information for various types of PV materials).

  9. Thin film polymer stress measurement using piezoresistive anisotropically etched pressure sensors

    SciTech Connect (OSTI)

    Bitko, G.; Harries, R.; Matkin, J.; McNeil, A.C.; Monk, D.J.; Shah, M.; Wertz, J.

    1997-05-01

    Silicon bulk micromachined piezoresistive pressure sensors are very sensitive to applied stresses: that is, applied pressure and/or packaging-related stresses. Device encapsulation has been observed to affect the electrical output of the pressure sensor significantly. The magnitude of the zero applied pressure output voltage (i.e., the offset voltage) that can be attributed to a thin film encapsulant is proportional to the magnitude of the room-temperature thermal stress of that film. Parylene C coatings have been used as encapsulants in this work. Finite element and analytical modeling techniques were used to evaluate the effect of material property variation on the offset of a pressure sensor. A simple, linear expression of offset as a function of a material property parametric group, that includes: parylene thickness, parylene biaxial modulus, parylene CTE, silicon thickness, and annealing temperature; has been established. Experimental analysis of parylene coated pressure sensors and parylene coated silicon and gallium arsenide wafers was performed to confirm the resulting model. Known variations in parylene material properties caused by processing (i.e., uncontrolled deposition, annealing, and high temperature storage) have been used as an experimental vehicle for this purpose. An empirical relationship between offset voltage on parylene coated devices and room-temperature thermal stress on parylene coated wafers that have been exposed to the same processing is a linear expression with a similar slope to the modeling results. Furthermore, stress measurements from parylene coated silicon wafers and parylene coated gallium arsenide wafers have been used to estimate the parylene biaxial modulus (approximately 5,000 MPa) and the parylene CTE (approximately 0 ppm/C) independently. These material properties were observed to shift following parylene annealing and high temperature storage exposure experiments in a manner that is consistent with the established model.

  10. Synthesis, Crystal and Electronic Structures of the Pnictides AE3TrPn3 (AE = Sr, Ba; Tr = Al, Ga; Pn = P, As)

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Stoyko, Stanislav; Voss, Leonard; He, Hua; Bobev, Svilen

    2015-09-24

    New ternary arsenides AE3TrAs3 (AE = Sr, Ba; Tr = Al, Ga) and their phosphide analogs Sr3GaP3 and Ba3AlP3 have been prepared by reactions of the respective elements at high temperatures. Single-crystal X-ray diffraction studies reveal that Sr3AlAs3 and Ba3AlAs3 adopt the Ba3AlSb3-type structure (Pearson symbol oC56, space group Cmce, Z = 8). This structure is also realized for Sr3GaP3 and Ba3AlP3. Likewise, the compounds Sr3GaAs3 and Ba3GaAs3 crystallize with the Ba3GaSb3-type structure (Pearson symbol oP56, space group Pnma, Z = 8). Both structures are made up of isolated pairs of edge-shared AlPn4 and GaPn4 tetrahedra (Pn = pnictogen, i.e.,more » P or As), separated by the alkaline-earth Sr2+ and Ba2+ cations. In both cases, there are no homoatomic bonds, hence, regardless of the slightly different atomic arrangements, both structures can be rationalized as valence-precise [AE2+]3[Tr3+][Pn3-]3, or rather [AE2+]6[Tr2Pn6]12-, i.e., as Zintl phases.« less

  11. Structural and morphological evolution of gallium nitride nanorods grown by chemical beam epitaxy

    SciTech Connect (OSTI)

    Kuo, Shou-Yi; Lai, Fang-I; Chen, Wei-Chun; Hsiao, Chien-Nan; Lin, Woei-Tyng

    2009-07-15

    The morphological and structural evolution is presented for GaN nanorods grown by chemical beam epitaxy on (0001) Al{sub 2}O{sub 3} substrates. Their structural and optical properties are investigated by x-ray diffraction, scanning and transmission electron microscopy, and temperature-dependent photoluminescence measurements. While increasing the growth temperature and the flow rate of radio-frequency nitrogen radical, the three-dimensional growth mode will be enhanced to form one-dimensional nanostructures. The high density of well-aligned nanorods with a diameter of 30-50 nm formed uniformly over the entire sapphire substrate. The x-ray diffraction patterns and transmission electron microscopic images indicate that the self-assembled GaN nanorods are a pure single crystal and preferentially oriented in the c-axis direction. Particularly, the ''S-shape'' behavior with localization of {approx}10 meV observed in the temperature-dependent photoluminescence might be ascribed to the fluctuation in crystallographic defects and composition.

  12. Measurement of piezoelectric constants of lanthanum-gallium tantalate crystal by X-ray diffraction methods

    SciTech Connect (OSTI)

    Blagov, A. E.; Marchenkov, N. V. Pisarevsky, Yu. V.; Prosekov, P. A.; Kovalchuk, M. V.

    2013-01-15

    A method for measuring piezoelectric constants of crystals of intermediate systems by X-ray quasi-multiple-wave diffraction is proposed and implemented. This technique makes it possible to determine the piezoelectric coefficient by measuring variations in the lattice parameter under an external electric field. This method has been approved, its potential is evaluated, and a comparison with high-resolution X-ray diffraction data is performed.

  13. Elastic scattering by hot electrons and apparent lifetime of longitudinal optical phonons in gallium nitride

    SciTech Connect (OSTI)

    Khurgin, Jacob B.; Bajaj, Sanyam; Rajan, Siddharth

    2015-12-28

    Longitudinal optical (LO) phonons in GaN generated in the channel of high electron mobility transistors (HEMT) are shown to undergo nearly elastic scattering via collisions with hot electrons. The net result of these collisions is the diffusion of LO phonons in the Brillouin zone causing reduction of phonon and electron temperatures. This previously unexplored diffusion mechanism explicates how an increase in electron density causes reduction of the apparent lifetime of LO phonons, obtained from the time resolved Raman studies and microwave noise measurements, while the actual decay rate of the LO phonons remains unaffected by the carrier density. Therefore, the saturation velocity in GaN HEMT steadily declines with increased carrier density, in a qualitative agreement with experimental results.

  14. Accelerated Testing of HT-9 with Zirconia Coatings Containing Gallium using Raman Spectroscopy and XPS

    SciTech Connect (OSTI)

    Windisch, Charles F.; Henager, Charles H.; Engelhard, Mark H.; Bennett, Wendy D.

    2009-12-01

    Laser Raman spectroscopy and x-ray photoelectron spectroscopy were used to study the evolution of composition of oxide films in the presence of zirconia coatings on miniature HT-9 alloy specimens subjected to elevated temperature in air. The experiments expanded on previous efforts to develop a quick-screening technique for candidate alloys for cladding materials (HT-9) and actinide-based mixed oxide fuel mixtures (represented by the zirconia coating) by investigating the effect of both coating composition and alloy pretreatment conditions on the high temperature reactions. In particular, the presence of the element Ga (a potential impurity in mixed oxide fuel) in the initial zirconia coating was found to accelerate the rate of oxide growth relative to that of yttria-stabilized zirconia studied previously. In addition, HT-9 samples that were subjected to different thermal pretreatments gave different results. The results suggest that the presence of Ga in a mixed oxide fuel will enhance the corrosion of HT-9 cladding under the conditions of this study, although the extent of enhancement is influenced by thermal pretreatment of the cladding material. The results also demonstrate the need to combine Raman spectroscopy with other techniques, particularly photoelectron spectroscopy, for optimizing composition and/or fabrication conditions of both cladding and oxide fuels for advanced nuclear reactors.

  15. SAGE: Solar Neutrino Data from SAGE, the Russian-American Gallium Solar Neutrino Experiment

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    SAGE Collaboration

    SAGE is a solar neutrino experiment based on the reaction 71Ga + n goes to 71Ge + e-. The 71Ge atoms are chemically extracted from a 50-metric ton target of Ga metal and concentrated in a sample of germane gas mixed with xenon. The atoms are then individually counted by observing their decay back to 71Ga in a small proportional counter. The distinguishing feature of the experiment is its ability to detect the low-energy neutrinos from proton-proton fusion. These neutrinos, which are made in the primary reaction that provides the Sun's energy, are the major component of the solar neutrino flux and have not been observed in any other way. To shield the experiment from cosmic rays, it is located deep underground in a specially built facility at the Baksan Neutrino Observatory in the northern Caucasus mountains of Russia. Nearly 100 measurements of the solar neutrino flux have been made during 1990-2000, and their combined result is a neutrino capture rate that is well below the prediction of the Standard Solar Model. The significant suppression of the solar neutrino flux that SAGE and other solar neutrino experiments have observed gives a strong indication for the existence of neutrino oscillations. [copied from the SAGE homepage at http://ewi.npl.washington.edu/SAGE/SAGE.html

  16. Application of the bounds-analysis approach to arsenic and gallium...

    Office of Scientific and Technical Information (OSTI)

    Date: 2015-01-01 OSTI Identifier: 1235253 Report Number(s): SAND2014-17327J Journal ID: ISSN 1098-0121; PRBMDO; 537237 GrantContract Number: AC04-94AL85000 Type: Accepted...

  17. Lateral damage in graphene carved by high energy focused gallium ion beams

    SciTech Connect (OSTI)

    Liao, Zhongquan; Zhang, Tao; Jordan, Rainer; Gall, Martin; Rosenkranz, Rüdiger; Dianat, Arezoo; Cuniberti, Gianaurelio; and others

    2015-07-06

    Raman mapping is performed to study the lateral damage in supported monolayer graphene carved by 30 keV focused Ga{sup +} beams. The evolution of the lateral damage is tracked based on the profiles of the intensity ratio between the D (1341 cm{sup −1}) and G (1582 cm{sup −1}) peaks (I{sub D}/I{sub G}) of the Raman spectra. The I{sub D}/I{sub G} profile clearly reveals the transition from stage 2 disorder into stage 1 disorder in graphene along the direction away from the carved area. The critical lateral damage distance spans from <1 μm up to more than 30 μm in the experiment, depending on the parameters used for carving the graphene. The wide damage in the lateral direction is attributed to the deleterious tail of unfocused ions in the ion beam probe. The study raises the attention on potential sample damage during direct patterning of graphene nanostructures using the focused ion beam technique. Minimizing the total carving time is recommended to mitigate the lateral damage.

  18. Sandia Demonstrated First-Time, Single-Mode Lasing in Gallium...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transportation Energy Consortiums Engine Combustion Facilities Algae Testbed Battery Abuse ... in George's work is an important step toward all nanowire-laser-based applications. ...

  19. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore » the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  20. The Russian-American Gallium Experiment (SAGE) Cr Neutrino Source Measurement

    SciTech Connect (OSTI)

    Abdurashitov, J.; Gavrin, V.; Girin, S.; Gorbachev, V.; Ibragimova, T.; Kalikhov, A.; Khairnasov, N.; Knodel, T.; Kornoukhov, V.; Mirmov, I.; Shikhin, A.; Veretenkin, E.; Vermul, V.; Yants, V.; Zatsepin, G.; Bowles, T.; Nico, J.; Teasdale, W.; Wark, D.; Cherry, M.; Karaulov, V.; Levitin, V.; Maev, V.; Nazarenko, P.; Shkolnik, V.; Skorikov, N.; Cleveland, B.; Daily, T.; Davis, R. Jr.; Lande, K.; Lee, C.; Wildenhain, P.; Khomyakov, Y.; Zvonarev, A.; Elliott, S.; Wilkerson, J.

    1996-12-01

    The solar neutrino capture rate measured by SAGE is well below that predicted by solar models. To check the overall experimental efficiency, we exposed 13tonnes of Ga metal to a reactor-produced 517kCi source of {sup 51}Cr. The ratio of the measured production rate to that predicted from the source activity is 0.95{plus_minus}0.11(stat)+0.05/{minus}0.08(syst). This agreement verifies that the experimental efficiency is measured correctly, establishes that there are no unknown systematic errors at the 10{percent} level, and provides considerable evidence for the reliability of the solar neutrino measurement. {copyright} {ital 1996 The American Physical Society.}

  1. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    SciTech Connect (OSTI)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer has the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.

  2. Development and fabrication of advanced cover glass for a GaAs solar cell

    SciTech Connect (OSTI)

    Borden, P.G.; Kaminar, N.R.; Grounner, M.

    1984-01-01

    This report summarizes work on improving solar cell conversion efficiencies by modifying the cell cover glass. Two approaches were investigated during the course of this work: grooved cover glasses to reduce the effect of top contact obscuration and secondary concentrators to improve concentrator solar cell performances in tracking modules. The grooved cover glass work used an array of metallized V shaped grooves in a thin cover glass (plastic) window to deflect incident light rays away from solar cell front surface regions covered by the solar cell electrical contact metallization onto unobstructed, optically active regions of the solar cell. Secondary concentrators are being considered for use on concentrator solar cells to improve overall system conversion efficiency and reduce receiver module cost. Secondary concentrators designed and fabricated during this project consist of small glass cones to attach directly to the top of the receiver solar cell. When appropriately designed, these secondary concentrator glass cones increase sunlight concentration on the solar cell, improve solar flux uniformity on the cell, improve system tolerance to tracking error, and allow for concentration ratios greater than can be ordinarily achieved with acrylic Fresnel lenses.

  3. Antimonide-Based Long-Wavelength Lasers on GaAs Substrates

    SciTech Connect (OSTI)

    KLEM,JOHN F.; Blum, O.

    2000-08-17

    We have investigated the use of GaAsSb in edge-emitting laser active regions, in order to obtain lasing near 1.3 {micro}m. Single quantum well GaAsSb devices display electroluminescence at wavelengths as long as 1.34 {micro}m, but substantial blueshifts occur under high injection conditions. GaAsSb single quantum well edge emitters have been obtained which lase at 1.275 {micro}m with a room-temperature threshold current density as low as 535 A/cm{sup 2}. Modification of the basic GaAsSb/GaAs structure with the addition of InGaAs layers results in a strongly type-II band alignment which can be used to further extend the emission wavelength of these devices. Using GaAsSb/InGaAs active regions, lasers emitting at 1.17 {micro}m have been obtained with room-temperature threshold current densities of 120 A/cm{sup 2}, and devices operating at 1.29 {micro}m have displayed thresholds as low as 375 A/cm{sup 2}. Characteristic temperatures for devices employing various GaAsSb-based active regions have been measured to be 60-73 K.

  4. GaAs buffer layer technique for vertical nanowire growth on Si...

    Office of Scientific and Technical Information (OSTI)

    OSTI Identifier: 22293061 Resource Type: Journal Article Resource Relation: Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 8; Other Information: (c) ...

  5. ESR Detection of optical dynamic nuclear polarization in GaAs...

    Office of Scientific and Technical Information (OSTI)

    between the nuclei and 2D conduction electrons. (c) 2000 The American Physical Society. ... Resource Relation: Journal Name: Physical Review. B, Condensed Matter and Materials ...

  6. Recent improvements in materials for thin GaAs and multibandgap solar cells

    SciTech Connect (OSTI)

    Benner, J.P.

    1985-05-01

    The High Efficiency Concepts Program at SERI supports research on III-V compound semiconductors with the objective of achieving the maximum attainable photovoltaic conversion efficiencies for terrestrial solar electric power. The outcome of this research may also affect the future of space photovoltaic cells. While the interest in thin-film, high-efficiency solar cells for terrestrial applications is driven principally by consideration of system costs, such cells would also improve the power density of space power arrays.

  7. Suppression of low-frequency charge noise in gates-defined GaAs quantum dots

    SciTech Connect (OSTI)

    You, Jie; Li, Hai-Ou E-mail: gpguo@ustc.edu.cn; Wang, Ke; Cao, Gang; Song, Xiang-Xiang; Xiao, Ming; Guo, Guo-Ping E-mail: gpguo@ustc.edu.cn

    2015-12-07

    To reduce the charge noise of a modulation-doped GaAs/AlGaAs quantum dot, we have fabricated shallow-etched GaAs/AlGaAs quantum dots using the wet-etching method to study the effects of two-dimensional electron gas (2DEG) underneath the metallic gates. The low-frequency 1/f noise in the Coulomb blockade region of the shallow-etched quantum dot is compared with a non-etched quantum dot on the same wafer. The average values of the gate noise are approximately 0.5 μeV in the shallow-etched quantum dot and 3 μeV in the regular quantum dot. Our results show the quantum dot low-frequency charge noise can be suppressed by the removal of the 2DEG underneath the metallic gates, which provides an architecture for noise reduction.

  8. Two dimensional electron transport in modulation-doped In{sub...

    Office of Scientific and Technical Information (OSTI)

    of Publication: United States Language: English Subject: 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM ARSENIDES; ANTIMONIDES; COMPARATIVE EVALUATIONS; DOPED MATERIALS;...

  9. Production data on 0.55 eV InGaAs thermophotovoltaic cells

    SciTech Connect (OSTI)

    Wojtzuk, S.; Colter, P.; Charache, G.; Campbell, B.

    1996-05-01

    Low bandgap 0.55 eV (2.25 {micro}m cutoff wavelength) indium gallium arsenide (In{sub 0.72}Ga{sub 0.28}As) thermophotovoltaic (TPV) cells use much more of the long wavelength energy emitted from low temperature (< 1,200 C) thermal sources than either Si or GaSb cells. Data are presented on a statistically significant number (2,500) of these TPV cells, indicating the performance obtainable in large numbers of cells. This data should be useful in the design and modeling of TPV system performance. At 1.2 A/cm{sup 2} short-circuit current, an average open-circuit voltage of 283 mV is obtained with a 60% fill factor. The peak external quantum efficiency for uncoated cells is 65% and is over 50% from 1.1 to 2.2 {micro}m. Internal quantum efficiency is over 76% in this range assuming an estimated 34% reflectance loss.

  10. Environmental assessment for the satellite power system concept development and evaluation program: atmospheric effects

    SciTech Connect (OSTI)

    Rote, D.M.; Brubaker, K.L.; Lee, J.L.

    1980-11-01

    The US Department of Energy (DOE) has undertaken a preliminary, three-year program to investigate the impacts of the construction and operation of a satellite power system, of unprecedented scale. The Department of Energy's program, titled The Concept Development and Evaluation Program, focused its investigations on a Reference System description that calls for the use of either silicon (Si) or gallium aluminum-arsenide (GaAlAs) photovoltaic cells on 60 satellites to be constructed in GEO over a 30-yr period. Rectennas would be constructed on the ground to receive microwave energy from the satellites. Each satellite-rectenna pair is designed to produce 5 GW of power on an essentially continuous basis for use as a baseload power source for an electric power distribution system. The environmental assessment part of the program was divided into five interdependent task areas. The present document constitutes the final technical report on one of the five task areas, the Assessment of the Atmospheric Effects, and as such presents an in-depth summary of work performed during the assessment program. The issues associated with SPS activities in the troposphere are examined. These include tropospheric weather modification related to rectenna operations and rocket launches, and air quality impacts related to rocketlaunch ground clouds. Then progressing upward through the various levels of the atmosphere, the principal middle and upper atmospheric effects associated with rocket effluents are analyzed. Finally, all of the potential SPS atmospheric effects are summarized.

  11. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  12. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  13. PVT -- A photovoltaic/thermal concentrator total energy system: Final phase 1 project report. Building opportunities in the U.S. for photovoltaics (PV:BONUS) Two

    SciTech Connect (OSTI)

    1998-12-31

    United Solar completed its Phase 1 report and its proposal for Phase 2 of the PVBONUS Two program at the end of March 1998. At the same time, it also completed and submitted a proposal to the California Energy Commission PIER program for additional funding to cost-share development and testing of a pre-production model of the PVT-14. It was unsuccessful in both of these proposed efforts. While waiting for the proposal decisions, work continued in April and May to analyze the system design and component decisions described below. This document is a final summation report on the Phase 1 effort of the PVBONUS Two program that describes the key technical issues that United Solar and its subcontractor, Industrial Solar Technology Corporation, worked on in preparation of a Phase 2 award. The decisions described were ones that will guide the design and fabrication of a pre-production prototype of a 1500:1 mirrored concentrator with gallium arsenide cells when United solar resumes its development work. The material below is organized by citing the key components that underwent a design review, what the company considered, what was decided, the name of the expected supplier, if not to be produced in-house, and some information about expected costs. The cost figures given are usually budgetary estimates, not the result of firm quotations or extensive analysis.

  14. Inverted Metamorphic Multijunction (IMM) Cell Processing Instructions

    SciTech Connect (OSTI)

    Duda, A.; Ward, S.; Young, M.

    2012-02-01

    This technical report details the processing schedule used to fabricate Inverted Metamorphic Multijunction (IMM) concentrator solar cells at The National Renewable Energy Laboratory (NREL). These devices are used as experimental test structures to support the research at NREL that is focused on increasing the efficiency of photovoltaic power conversion. They are not intended to be devices suitable for deployment in working concentrator systems primarily because of heat sinking issues. The process schedule was developed to be compatible with small sample sizes and to afford relatively rapid turn-around times, in support of research efforts. The report describes the use of electro deposition of gold for both the back and front contacts. Electro-deposition is used because of its rapid turn around time and because it is a benign metallization technique that is seldom responsible for damage to the semiconductors. The layer transfer technique is detailed including the use of a commercially available adhesive and the etching away of the parent gallium arsenide substrate. Photolithography is used to define front contact grids as well as the mesa area of the cell. Finally, the selective wet chemical etchant system is introduced and its use to reveal the back contact is described.

  15. An Efficient Molecular Dynamics Scheme for Predicting Dopant Implant Profiles in Semiconductors

    SciTech Connect (OSTI)

    Beardmore, K.M.; Gronbech-Jensen, N.

    1998-09-15

    The authors present a highly efficient molecular dynamics scheme for calculating the concentration profile of dopants implanted in group-IV alloy, and III-V zinc blende structure materials. The program incorporates methods for reducing computational overhead, plus a rare event algorithm to give statistical accuracy over several orders of magnitude change in the dopant concentration. The code uses a molecular dynamics (MD) model, instead of the binary collision approximation (BCA) used in implant simulators such as TRIM and Marlowe, to describe ion-target interactions. Atomic interactions are described by a combination of 'many-body' and screened Coulomb potentials. Inelastic energy loss is accounted for using a Firsov model, and electronic stopping is described by a Brandt-Kitagawa model which contains the single adjustable parameter for the entire scheme. Thus, the program is easily extensible to new ion-target combinations with the minimum of tuning, and is predictive over a wide range of implant energies and angles. The scheme is especially suited for calculating profiles due to low energy, large angle implants, and for situations where a predictive capability is required with the minimum of experimental validation. They give examples of using their code to calculate concentration profiles and 2D 'point response' profiles of dopants in crystalline silicon, silicon-germanium blends, and gallium-arsenide. They can predict the experimental profiles over five orders of magnitude for <100> and <110> channeling and for non-channeling implants at energies up to hundreds of keV.

  16. Predicting Low Energy Dopant Implant Profiles in Semiconductors using Molecular Dynamics

    SciTech Connect (OSTI)

    Beardmore, K.M.; Gronbech-Jensen, N.

    1999-05-02

    The authors present a highly efficient molecular dynamics scheme for calculating dopant density profiles in group-IV alloy, and III-V zinc blende structure materials. Their scheme incorporates several necessary methods for reducing computational overhead, plus a rare event algorithm to give statistical accuracy over several orders of magnitude change in the dopant concentration. The code uses a molecular dynamics (MD) model to describe ion-target interactions. Atomic interactions are described by a combination of 'many-body' and pair specific screened Coulomb potentials. Accumulative damage is accounted for using a Kinchin-Pease type model, inelastic energy loss is represented by a Firsov expression, and electronic stopping is described by a modified Brandt-Kitagawa model which contains a single adjustable ion-target dependent parameter. Thus, the program is easily extensible beyond a given validation range, and is therefore truly predictive over a wide range of implant energies and angles. The scheme is especially suited for calculating profiles due to low energy and to situations where a predictive capability is required with the minimum of experimental validation. They give examples of using the code to calculate concentration profiles and 2D 'point response' profiles of dopants in crystalline silicon and gallium-arsenide. Here they can predict the experimental profile over five orders of magnitude for <100> and <110> channeling and for non-channeling implants at energies up to hundreds of keV.

  17. High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrator Application

    SciTech Connect (OSTI)

    Hubbard, Seth

    2012-09-12

    The High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrators project seeks to provide new photovoltaic cells for Concentrator Photovoltaics (CPV) Systems with higher cell efficiency, more favorable temperature coefficients and less sensitivity to changes in spectral distribution. The main objective of this project is to provide high efficiency III-V solar cells that will reduce the overall cost per Watt for power generation using CPV systems.This work is focused both on a potential near term application, namely the use of indium arsenide (InAs) QDs to spectrally "tune" the middle (GaAs) cell of a SOA triple junction device to a more favorable effective bandgap, as well as the long term goal of demonstrating intermediate band solar cell effects. The QDs are confined within a high electric field i-region of a standard GaAs solar cell. The extended absorption spectrum (and thus enhanced short circuit current) of the QD solar cell results from the increase in the sub GaAs bandgap spectral response that is achievable as quantum dot layers are introduced into the i-region. We have grown InAs quantum dots by OMVPE technique and optimized the QD growth conditions. Arrays of up to 40 layers of strain balanced quantum dots have been experimentally demonstrated with good material quality, low residual stain and high PL intensity. Quantum dot enhanced solar cells were grown and tested under simulated one sun AM1.5 conditions. Concentrator solar cells have been grown and fabricated with 5-40 layers of QDs. Testing of these devices show the QD cells have improved efficiency compared to baseline devices without QDs. Device modeling and measurement of thermal properties were performed using Crosslight APSYS. Improvements in a triple junction solar cell with the insertion of QDs into the middle current limiting junction was shown to be as high as 29% under one sun illumination for a 10 layer stack QD enhanced triple junction solar cell. QD devices have strong

  18. DESIGN AND ANALYSIS OF AN INTEGRATED PULSE MODULATED S-BAND POWER AMPLIFIER IN GALLIUM NITRIDE PROCESS

    SciTech Connect (OSTI)

    STEVE SEDLOCK

    2012-04-04

    The design of power amplifiers in any semi-conductor process is not a trivia exercise and it is often encountered that the simulated solution is qualitatively different than the results obtained. Phenomena such as oscillation occurring either in-band or out of band and sometimes at subharmonic intervals, continuous spectrum noticed in some frequency bands, often referred to as chaos, and jumps and hysteresis effects can all be encountered and render a design useless. All of these problems might have been identified through a more rigorous approach to stability analysis. Designing for stability is probably the one area of amplifier design that receives the least amount of attention but incurs the most catastrophic of effects if it is not performed properly. Other parameters such as gain, power output, frequency response and even matching may suitable mitigation paths. But the lack of stability in an amplifier has no mitigating path. In addition to of loss of the design completely there are the increased production cycle costs, costs involved with investigating and resolving the problem and the costs involved with schedule slips or delays resulting from it. The Linville or Rollett stability criteria that many microwave engineers follow and rely exclusively on is not sufficient by itself to ensure a stable and robust design. It will be shown that the universal belief that unconditional stability is obtained through an analysis of the scattering matrix S to determine if 1 and |{Delta}{sub S}| < 1 is only part of the procedure and other tools must be used to validate the criteria. The research shown contributes to the state of the art by developing a more thorough stability design technique for designing amplifiers of any class, whether that be current mode or switch mode, than is currently undertaken with the goal of obtaining first pass design success.

  19. HIGH-QUALITY, LOW-COST BULK GALLIUM NITRIDE SUBSTRATES GROWN BY THE ELECTROCHEMICAL SOLUTION GROWTH METHOD

    Broader source: Energy.gov [DOE]

    To develop ESG into a viable bulk growth process for GaN that is more scalable to large-area wafer manufacturing and able to produce cost-effective, high-quality bulk GaN substrates.

  20. Direct synthesis of large area graphene on insulating substrate by gallium vapor-assisted chemical vapor deposition

    SciTech Connect (OSTI)

    Murakami, Katsuhisa Hiyama, Takaki; Kuwajima, Tomoya; Fujita, Jun-ichi; Tanaka, Shunsuke; Hirukawa, Ayaka; Kano, Emi; Takeguchi, Masaki

    2015-03-02

    A single layer of graphene with dimensions of 20?mm??20?mm was grown directly on an insulating substrate by chemical vapor deposition using Ga vapor catalysts. The graphene layer showed highly homogeneous crystal quality over a large area on the insulating substrate. The crystal quality of the graphene was measured by Raman spectroscopy and was found to improve with increasing Ga vapor density on the reaction area. High-resolution transmission electron microscopy observations showed that the synthesized graphene had a perfect atomic-scale crystal structure within its grains, which ranged in size from 50?nm to 200?nm.

  1. The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

    SciTech Connect (OSTI)

    Yang, Tsung-Jui; Wu, Yuh-Renn; Shivaraman, Ravi; Speck, James S.

    2014-09-21

    In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.

  2. Atomic Resolution in Situ Imaging of a Double-Bilayer Multistep Growth Mode in Gallium Nitride Nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gamalski, A. D.; Tersoff, J.; Stach, E. A.

    2016-04-13

    We study the growth of GaN nanowires from liquid Au–Ga catalysts using environmental transmission electron microscopy. GaN wires grow in either (11¯20) or (11¯00) directions, by the addition of {11¯00} double bilayers via step flow with multiple steps. Step-train growth is not typically seen with liquid catalysts, and we suggest that it results from low step mobility related to the unusual double-height step structure. Finally, the results here illustrate the surprising dynamics of catalytic GaN wire growth at the nanoscale and highlight striking differences between the growth of GaN and other III–V semiconductor nanowires.

  3. Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films

    SciTech Connect (OSTI)

    Curtis, Calvin J; Miedaner, Alexander; Van Hest, Maikel; Ginley, David S

    2014-11-04

    Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films.

  4. Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Armstrong, Andrew M.; Crawford, Mary H.; Jayawardena, Asanka; Ahyi, Ayayi; Dhar, Sarit

    2016-03-10

    Solar-blind photodetection and photoconductive gain > 50 corresponding to a responsivity > 8 A/W was observed for β-Ga2O3 Schottky photodiodes. We investigated the origin of photoconductive gain. Current-voltage characteristics of the diodes did not indicate avalanche breakdown, which excludes carrier multiplication by impact ionization as the source for gain. However, photocapacitance measurements indicated a mechanism for hole localization for above-band gap illumination, suggesting self-trapped hole formation. Comparison of photoconductivity and photocapacitance spectra indicated that self-trapped hole formation coincides with the strong photoconductive gain. We conclude that self-trapped hole formation near the Schottky diode lowers the effective Schottky barrier in reversemore » bias, producing photoconductive gain. Ascribing photoconductive gain to an inherent property like self-trapping of holes can explain the operation of a variety of β-Ga2O3 photodetectors.« less

  5. NREL: Process Development and Integration Laboratory - Copper...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Copper Indium Gallium Diselenide Cluster Tool Capabilities The Copper Indium Gallium Diselenide (CIGS) cluster tool in the Process Development and Integration Laboratory offers ...

  6. Efficient Schottky-like junction GaAs nanowire photodetector with 9?GHz modulation bandwidth with large active area

    SciTech Connect (OSTI)

    Seyedi, M. A. Yao, M.; O'Brien, J.; Wang, S. Y.; Dapkus, P. D.

    2014-07-28

    Efficient, low capacitance density GaAs/Indium-Tin-Oxide Schottky-like junction photodetectors with a 50??m square active are fabricated for operation in the gigahertz range. Modulation bandwidth is experimentally measured up to 10?GHz at various applied reverse biases and optical intensities to explore the effects of photo-generated carrier screening on modulation bandwidth. Last, the bandwidth dependence on applied reverse bias and optical intensity is simulated as a means to quantify average carrier velocities in nanowire material systems.

  7. Passivation of deep level states caused by misfit dislocations in InGaAs on patterned GaAs

    SciTech Connect (OSTI)

    Matragrano, M.J.; Watson, G.P.; Ast, D.G. ); Anderson, T.J.; Pathangey, B. )

    1993-03-22

    Deep level transient spectroscopy (DLTS) and cathodoluminescence (CL) were used to study the hydrogen passivation of misfit dislocations in In[sub 0.06]Ga[sub 0.94]As/GaAs heterostructures. The CL observations indicate that hydrogen plasma exposure passivates most, but not all, of the dark line defects existing in the specimen prior to hydrogenation. The concentration of deep level defect states that cannot be passivated is below the detection limit of the DLTS instrument (approximately 4[times]10[sup 12] cm[sup [minus]3]). We find the passivation is stable after anneals at temperatures as high as 600 [degree]C, indicating that hydrogen passivation of misfit dislocations is at least as stable as that of the isolated point defect studied previously with DLTS [W. C. Dautremont-Smith, J. C. Nabity, V. Swaminathan, M. Stavola, J. Chevalier, C. W. Tu, and S. J. Pearton, Appl. Phys. Lett. [bold 49] 1098 (1986)].

  8. Investigation of Tunable Diode Spectroscopy for Monitoring Gases in Geothermal Plants

    SciTech Connect (OSTI)

    J. K. Partin

    2006-08-01

    The results of an investigation directed at the development of instrument-tation for the real-time monitoring of gases, such as hydrogen sulfide (H2S) and chloride (HCl), in geothermal process streams is described. The geothermal power industry has an interest in the development of new low maintenance techniques since improved capabilities could lead to considerable cost savings through the optimization of various gas abatement processes. Tunable diode laser spectroscopy was identified as a candidate tech-nology for this application and a commercial instrument was specified and procured for testing. The measurement principle involved the use of solid state diode lasers and frequency modulation techniques. The gallium arsenide diode lasers employed emit light in the 0.7 to 2.0 micron region of the electromagnetic spectrum. This region contains the overtone and combination absorption bands of a number of species of industrial interest, including H2S and HCl. A particular device can be tuned over a small range to match the absorption line by changing its applied temperature and current. The diode current can also be sinusoidally modulated in frequency as it is tuned across the line. This modulation allows measurements to be conducted at frequencies where the laser intensity noise is minimal; and therefore, very high signal-to-noise measurements are possible. The feasibility of using this technology in various types of geothermal process streams has been explored. The results of laboratory and field studies are presented along with new advances in laser technology that could allow more sensitive and selective measurements to be performed.

  9. Electrical and optical performance characteristics of 0.74eV p/n InGaAs monolithic interconnected modules

    SciTech Connect (OSTI)

    Wilt, D.M.; Weizer, V.G.; Fatemi, N.S.; Jenkins, P.P.; Hoffman, R.W. Jr.; Jain, R.K.; Murray, C.S.; Riley, D.R.

    1997-06-01

    There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between system efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) cells series-connected on a single semi-insulating indium phosphide (InP) substrate. The MIM is exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 cm{sup 2} device consisting of eight series interconnected cells. MIM devices, produced from 0.74 eV InGaAs, have demonstrated V{sub oc} = 3.2 volts, J{sub sc} = 70 mA/cm{sup 2} and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurements (> 2 {micro}m) of these devices indicate a reflectivity of > 82%. MIM devices produced from 0.55 eV InGaAs have also been demonstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM0) have been demonstrated.

  10. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    arsenides (1) antennas (1) applied life sciences (1) biological functions (1) brain (1) computerized simulation (1) copper (1) copper plating. (1) deformation (1) design ...

  11. Method for the chemical separation of GE-68 from its daughter Ga-68

    DOE Patents [OSTI]

    Fitzsimmons, Jonathan M.; Atcher, Robert W.

    2010-06-01

    The present invention is directed to a generator apparatus for separating a daughter gallium-68 radioisotope substantially free of impurities from a parent gernanium-68 radioisotope, including a first resin-containing column containing parent gernanium-68 radioisotope and daughter gallium-68 radioisotope, a source of first eluent connected to said first resin-containing column for separating daughter gallium-68 radioisotope from the first resin-containing column, said first eluent including citrate whereby the separated gallium is in the form of gallium citrate, a mixing space connected to said first resin-containing column for admixing a source of hydrochloric acid with said separated gallium citrate whereby gallium citrate is converted to gallium tetrachloride, a second resin-containing column for retention of gallium-68 tetrachloride, and, a source of second eluent connected to said second resin-containing column for eluting the daughter gallium-68 radioisotope from said second resin-containing column.

  12. Exploration of Novel Reaction Pathway for Formation of Copper Indium Gallium Diselenide: Cooperative Research and Development Final Report, CRADA Number CRD-03-121

    SciTech Connect (OSTI)

    van Hest, M.

    2014-11-01

    The investigation will explore a potentially low-cost method of forming CIGS for use in solar cells. Investigators from HelioVolt will work in NREL laboratories to modify and apply our tools in fabrication of the CIGS layer. Investigators from NREL will assist in preparing substrates and in compleing solar cells composed of these CIGS layers to evaluate the effectiveness of the HelioVolt processes.

  13. Rare-earth transition-metal gallium chalcogenides RE{sub 3}MGaCh{sub 7} (M=Fe, Co, Ni; Ch=S, Se)

    SciTech Connect (OSTI)

    Rudyk, Brent W.; Stoyko, Stanislav S.; Oliynyk, Anton O.; Mar, Arthur

    2014-02-15

    Six series of quaternary rare-earth transition-metal chalcogenides RE{sub 3}MGaCh{sub 7} (M=Fe, Co, Ni; Ch=S, Se), comprising 33 compounds in total, have been prepared by reactions of the elements at 1050 °C (for the sulphides) or 900 °C (for the selenides). They adopt noncentrosymmetric hexagonal structures (ordered Ce{sub 3}Al{sub 1.67}S{sub 7}-type, space group P6{sub 3}, Z=2) with cell parameters in the ranges of a=9.5–10.2 Å and c=6.0–6.1 Å for the sulphides and a=10.0–10.5 Å and c=6.3–6.4 Å for the selenides as refined from powder X-ray diffraction data. Single-crystal structures were determined for five members of the sulphide series RE{sub 3}FeGaS{sub 7} (RE=La, Pr, Tb) and RE{sub 3}CoGaS{sub 7} (RE=La, Tb). The highly anisotropic crystal structures consist of one-dimensional chains of M-centred face-sharing octahedra and stacks of Ga-centred tetrahedra all pointing in the same direction. Magnetic measurements on the sulphides reveal paramagnetic behaviour in some cases and long-range antiferromagnetic behaviour with low Néel temperatures (15 K or lower) in others. Ga L-edge XANES spectra support the presence of highly cationic Ga tetrahedral centres with a tendency towards more covalent Ga–Ch character on proceeding from the sulphides to the selenides. Band structure calculations on La{sub 3}FeGaS{sub 7} indicate that the electronic structure is dominated by Fe 3d-based states near the Fermi level. - Graphical abstract: The series of chalcogenides RE{sub 3}MGaS{sub 7}, which form for a wide range of rare-earth and transition metals (M=Fe, Co, Ni), adopt highly anisotropic structures containing chains of M-centred octahedra and stacks of Ga-centred tetrahedra. Display Omitted - Highlights: • Six series (comprising 33 compounds) of chalcogenides RE{sub 3}MGaCh{sub 7} were prepared. • They adopt noncentrosymmetric hexagonal structures with high anisotropy. • Most compounds are paramagnetic; some show antiferromagnetic ordering. • Ga L-edge XANES confirms presence of cationic Ga species.

  14. Noncentrosymmetric rare-earth copper gallium chalcogenides RE{sub 3}CuGaCh{sub 7} (RE=La–Nd; Ch=S, Se): An unexpected combination

    SciTech Connect (OSTI)

    Iyer, Abishek K.; Rudyk, Brent W.; Lin, Xinsong; Singh, Harpreet; Sharma, Arzoo Z.; Wiebe, Christopher R.; Mar, Arthur

    2015-09-15

    The quaternary rare-earth chalcogenides RE{sub 3}CuGaS{sub 7} and RE{sub 3}CuGaSe{sub 7} (RE=La–Nd) have been prepared by reactions of the elements at 1050 °C and 900 °C, respectively. They crystallize in the noncentrosymmetric La{sub 3}CuSiS{sub 7}-type structure (hexagonal, space group P6{sub 3}, Z=2) in which the a-parameter is largely controlled by the RE component (a=10.0–10.3 Å for the sulfides and 10.3–10.6 Å for the selenides) whereas the c-parameter is essentially fixed by the choice of Ga and chalcogen atoms within tetrahedral units (c=6.1 Å for the sulfides and 6.4 Å for the selenides). They extend the series RE{sub 3}MGaCh{sub 7}, previously known for divalent metal atoms (M=Mn–Ni), differing in that the Cu atoms in RE{sub 3}CuGaCh{sub 7} occupy trigonal planar sites instead of octahedral sites. Among quaternary chalcogenides RE{sub 3}MM′Ch{sub 7}, the combination of monovalent (M=Cu) and trivalent (M′=Ga) metals is unusual because it appears to violate the condition of charge balance satisfied by most La{sub 3}CuSiS{sub 7}-type compounds. The possibility of divalent Cu atoms was ruled out by bond valence sum analysis, magnetic measurements, and X-ray photoelectron spectroscopy. The electron deficiency in RE{sub 3}CuGaCh{sub 7} is accommodated through S-based holes at the top of the valence band, as shown by band structure calculations on La{sub 3}CuGaS{sub 7}. An optical band gap of about 2.0 eV was found for La{sub 3}CuGaSe{sub 7}. - Graphical abstract: The chalcogenides RE{sub 3}CuGaCh{sub 7} contain monovalent Cu in trigonal planes and trivalent Ga in tetrahedra; they are electron-deficient representatives of La{sub 3}CuSiS{sub 7}-type compounds, which normally satisfy charge balance. - Highlights: • Quaternary chalcogenides RE{sub 3}CuGaCh{sub 7} (RE=La–Nd; Ch=S, Se) were prepared. • Bond valence sums, magnetism, and XPS data give evidence for monovalent Cu. • Crystal structures reveal high anisotropy of Cu displacement. • Electron deficiency is accommodated by S-based holes in valence band.

  15. Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes

    SciTech Connect (OSTI)

    Hosalli, A. M.; Van Den Broeck, D. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Electrical and Computer Engineering, NCSU, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)] [Department of Material Science and Engineering, NCSU, Raleigh, North Carolina 27695 (United States)

    2013-12-02

    We demonstrate a metalorganic chemical vapor deposition growth approach for inverting N-polar to Ga-polar GaN by using a thin inversion layer grown with high Mg flux. The introduction of this inversion layer allowed us to grow p-GaN films on N-polar GaN thin film. We have studied the dependence of hole concentration, surface morphology, and degree of polarity inversion for the inverted Ga-polar surface on the thickness of the inversion layer. We then use this approach to grow a light emitting diode structure which has the MQW active region grown on the advantageous N-polar surface and the p-layer grown on the inverted Ga-polar surface.

  16. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  17. Oxygen vacancy induced magnetization switching in Fe{sub 3}O{sub 4} epitaxial ultrathin films on GaAs(100)

    SciTech Connect (OSTI)

    Huang, Zhaocong; Chen, Qian; Zhai, Ya E-mail: jlwang@seu.edu.cn; Wang, Jinlan E-mail: jlwang@seu.edu.cn; Xu, Yongbing; Wang, Baoping

    2015-05-04

    The magnetic and transport properties of half metallic Fe{sub 3}O{sub 4}, which are sensitive to the stoichiometry, are the key issue for applications in spintronics. An anomalous enlargement of the saturation magnetic moment is found in a relatively thick sample of epitaxial Fe{sub 3}O{sub 4} film by post-growth oxidation method. The investigation of the thickness dependence of magnetic moment suggests that the enhanced magnetism moment may come from the existence of oxygen vacancies. First-principles calculations reveal that with oxygen vacancies in Fe{sub 3}O{sub 4} crystal the spin of Fe ions in the tetrahedron site near the vacancy is much easier to switch parallel to the Fe ions in the octahedron site by temperature disturbance, supported by the temperature dependence of magnetic moment of Fe{sub 3}O{sub 4} films in experiment.

  18. Effects of strain and quantum confinement in optically pumped nuclear magnetic resonance in GaAs: Interpretation guided by spin-dependent band structure calculations

    SciTech Connect (OSTI)

    Wood, R. M.; Saha, D.; McCarthy, L. A.; Tokarski, III, J. T.; Sanders, G. D.; Kuhns, P. L.; McGill, S. A.; Reyes, A. P.; Reno, J. L.; Stanton, C. J.; Bowers, C. R.

    2014-10-29

    A combined experimental-theoretical study of optically pumped NMR (OPNMR) has been performed in a GaAs/Al0.1Ga0.9As quantum well film with thermally induced biaxial strain. The photon energy dependence of the Ga-71 OPNMR signal was recorded at magnetic fields of 4.9 and 9.4 T at a temperature of 4.8-5.4 K. The data were compared to the nuclear spin polarization calculated from differential absorption to spin-up and spin-down states of the conduction band using a modified Pidgeon Brown model. Reasonable agreement between theory and experiment is obtained, facilitating assignment of features in the OPNMR energy dependence to specific interband transitions. Despite the approximations made in the quantum-mechanical model and the inexact correspondence between the experimental and calculated observables, the results provide insight into how effects of strain and quantum confinement are manifested in OPNMR signals

  19. Effects of strain and quantum confinement in optically pumped nuclear magnetic resonance in GaAs: Interpretation guided by spin-dependent band structure calculations

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wood, R. M.; Saha, D.; McCarthy, L. A.; Tokarski, III, J. T.; Sanders, G. D.; Kuhns, P. L.; McGill, S. A.; Reyes, A. P.; Reno, J. L.; Stanton, C. J.; et al

    2014-10-29

    A combined experimental-theoretical study of optically pumped NMR (OPNMR) has been performed in a GaAs/Al0.1Ga0.9As quantum well film with thermally induced biaxial strain. The photon energy dependence of the Ga-71 OPNMR signal was recorded at magnetic fields of 4.9 and 9.4 T at a temperature of 4.8-5.4 K. The data were compared to the nuclear spin polarization calculated from differential absorption to spin-up and spin-down states of the conduction band using a modified Pidgeon Brown model. Reasonable agreement between theory and experiment is obtained, facilitating assignment of features in the OPNMR energy dependence to specific interband transitions. Despite the approximationsmore » made in the quantum-mechanical model and the inexact correspondence between the experimental and calculated observables, the results provide insight into how effects of strain and quantum confinement are manifested in OPNMR signals« less

  20. Oral Mucositis Prevention By Low-Level Laser Therapy in Head-and-Neck Cancer Patients Undergoing Concurrent Chemoradiotherapy: A Phase III Randomized Study

    SciTech Connect (OSTI)

    Gouvea de Lima, Aline; Villar, Rosangela Correa; Castro, Gilberto de; Antequera, Reynaldo; Gil, Erlon; Rosalmeida, Mauro Cabral; Federico, Miriam Hatsue Honda; Snitcovsky, Igor Moises Longo

    2012-01-01

    Purpose: Oral mucositis is a major complication of concurrent chemoradiotherapy (CRT) in head-and-neck cancer patients. Low-level laser (LLL) therapy is a promising preventive therapy. We aimed to evaluate the efficacy of LLL therapy to decrease severe oral mucositis and its effect on RT interruptions. Methods and Materials: In the present randomized, double-blind, Phase III study, patients received either gallium-aluminum-arsenide LLL therapy 2.5 J/cm{sup 2} or placebo laser, before each radiation fraction. Eligible patients had to have been diagnosed with squamous cell carcinoma or undifferentiated carcinoma of the oral cavity, pharynx, larynx, or metastases to the neck with an unknown primary site. They were treated with adjuvant or definitive CRT, consisting of conventional RT 60-70 Gy (range, 1.8-2.0 Gy/d, 5 times/wk) and concurrent cisplatin. The primary endpoints were the oral mucositis severity in Weeks 2, 4, and 6 and the number of RT interruptions because of mucositis. The secondary endpoints included patient-reported pain scores. To detect a decrease in the incidence of Grade 3 or 4 oral mucositis from 80% to 50%, we planned to enroll 74 patients. Results: A total of 75 patients were included, and 37 patients received preventive LLL therapy. The mean delivered radiation dose was greater in the patients treated with LLL (69.4 vs. 67.9 Gy, p = .03). During CRT, the number of patients diagnosed with Grade 3 or 4 oral mucositis treated with LLL vs. placebo was 4 vs. 5 (Week 2, p = 1.0), 4 vs. 12 (Week 4, p = .08), and 8 vs. 9 (Week 6, p = 1.0), respectively. More of the patients treated with placebo had RT interruptions because of mucositis (6 vs. 0, p = .02). No difference was detected between the treatment arms in the incidence of severe pain. Conclusions: LLL therapy was not effective in reducing severe oral mucositis, although a marginal benefit could not be excluded. It reduced RT interruptions in these head-and-neck cancer patients, which might

  1. Effects of phase transformation on the microstructures and magnetostri...

    Office of Scientific and Technical Information (OSTI)

    ... Subject: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DOMAIN STRUCTURE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM ALLOYS; IRON BASE ALLOYS; ...

  2. Band gap narrowing in zinc oxide-based semiconductor thin films...

    Office of Scientific and Technical Information (OSTI)

    ABSORPTION; ALUMINIUM COMPOUNDS; BORON COMPOUNDS; CHARGE CARRIERS; CONCENTRATION RATIO; DENSITY; DOPED MATERIALS; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM COMPOUNDS; INDIUM...

  3. "Title","Creator/Author","Publication Date","OSTI Identifier...

    Office of Scientific and Technical Information (OSTI)

    ABSORPTION; ALUMINIUM COMPOUNDS; BORON COMPOUNDS; CHARGE CARRIERS; CONCENTRATION RATIO; DENSITY; DOPED MATERIALS; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM COMPOUNDS; INDIUM...

  4. TITLE AUTHORS SUBJECT SUBJECT RELATED DESCRIPTION PUBLISHER AVAILABILI...

    Office of Scientific and Technical Information (OSTI)

    ABSORPTION ALUMINIUM COMPOUNDS BORON COMPOUNDS CHARGE CARRIERS CONCENTRATION RATIO DENSITY DOPED MATERIALS ELECTRONIC STRUCTURE ENERGY GAP GALLIUM COMPOUNDS INDIUM COMPOUNDS...

  5. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    ... Filter Results Filter by Subject materials science (5) crystal growth (3) indium arsenides ... Corresponding full PIN structures have been realized by growing a p-type GaN layer on the ...

  6. Weyl Fermions Discovered After 85 Years

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    theorized 85 years ago: the Weyl fermion. It was detected as an emergent quasiparticle in synthetic crystals of the semimetal, tantalum arsenide (TaAs). Using angle-resolved...

  7. EA-1686: Department of Energy Loan Guarantee to SoloPower Inc. for the Electrodeposition-based Copper indium gallium selenide (CIGS) Solar Technology Manufacturing Facility near San Jose, California

    Broader source: Energy.gov [DOE]

    EA cancelled due to a change in project scope; DOE prepared a categorical exclusion determination (8/15/11).

  8. Structural tuning of residual conductivity in highly mismatched III-V layers

    DOE Patents [OSTI]

    Han, Jung; Figiel, Jeffrey J.

    2002-01-01

    A new process to control the electrical conductivity of gallium nitride layers grown on a sapphire substrate has been developed. This process is based on initially coating the sapphire substrate with a thin layer of aluminum nitride, then depositing the gallium nitride thereon. This process allows one to controllably produce gallium nitride layers with resistivity varying over as much as 10 orders of magnitude, without requiring the introduction and activation of suitable dopants.

  9. The Influence of Lewis Acid/Base Chemistry on the Removal of...

    Office of Scientific and Technical Information (OSTI)

    These results have an important influence on the potential for simple gallium removal in molten salt systems. Authors: Williams, David F. ; Cul, Guillermo D. del 1 ; Toth, Louis ...

  10. Summer 2011 Intern Project- Jonathan Waltman | Center for Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    High efficiency solar cells require multiple junctions optimized for different wavelengths, and indium gallium nitride (InGaN) has the potential to further improve the efficiency ...

  11. Assessment of Latent Heat Reservoirs for Thermal Management of...

    Office of Scientific and Technical Information (OSTI)

    During the early portion of the pulse, heating of the diode and its surrounding material ... Subject: 42 ENGINEERING; CAPACITY; FUSION HEAT; GALLIUM; HEAT FLUX; HEAT TRANSFER; ...

  12. Assessment of Latent Heat Reservoirs for Thermal Management of...

    Office of Scientific and Technical Information (OSTI)

    ... During the early portion of the pulse, heating of the diode and its surrounding material ... Subject: 42 ENGINEERING; CAPACITY; FUSION HEAT; GALLIUM; HEAT FLUX; HEAT TRANSFER; ...

  13. Search for: All records | SciTech Connect

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    ... Filter Results Filter by Subject materials science (28) gallium nitrides (22) solar (photovoltaic), solid state lighting, phonons, materials and chemistry by design, optics, ...

  14. Search for: All records | SciTech Connect

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    ... Las Vegas, Nevada (United States) Yucca Mountain Project... structure (1) cystine (1) death (1) design (1) gallium ... solvothermal rate with CuClsub ...

  15. PTIP Ltd | Open Energy Information

    Open Energy Info (EERE)

    Africa Sector: Solar Product: Thin-film Copper-indium-gallium-sulphur-selenide solar cell technology spinout from the University of Johannesburg. References: PTIP Ltd1 This...

  16. Search for: All records | SciTech Connect

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    ... (1) fibrosis (1) gallium 68 (1) historical (1) intercomparison (1) losses (1) lungs (1) management of radioactive wastes, and non-radioactive wastes from nuclear ...

  17. PROJECT PROFILE: From Modules to Atoms: Increasing Reliability...

    Broader source: Energy.gov (indexed) [DOE]

    The project will study reliability-related defects in major photovoltaic (PV) technologies that include silicon (Si), cadmium telluride (CdTe), and copper indium gallium selenide ...

  18. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    points (1) chemical properties (1) chemistry (1) circulation cell (1) compatibility ... The Influence of Lewis AcidBase Chemistry on the Removal of Gallium by Volatility from ...

  19. PROJECT PROFILE: Manufacturing and Reliability Science for CIGS...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    This project aims to overcome the largest challenges to investor confidence and long product lifetime in copper indium gallium selenide (CIGS): meta-stability, potential-induced ...

  20. NREL: Photovoltaics Research - Standards Development

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Current standards lack specifics on how to precondition cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) modules so that when tested for reporting conditions, ...

  1. Search for: All records | SciTech Connect

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    structure (1) fermi level (1) fluorescence (1) gallium alloys (1) hole mobility ... a device, has an important function in fluorescence-based organic light-emitting diodes ...

  2. High Temperature Aqueous Chemistry

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    transport and formation of ore deposits with strategic importance such as rare earth elements (REE), beryllium, cobalt, gallium, indium, and telluride deposits, etc., which ...

  3. PRiME 2016 (Honolulu, HI) - JCAP

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Cells, and Solar Fuels 7 Sunday, 2 October 2016 Electrochemical Carbon Dioxide Reduction to Hydrocarbons with a Nickel-Gallium Thin Film Catalyst at Low ...

  4. Solibro AB | Open Energy Information

    Open Energy Info (EERE)

    Sweden Zip: 751 21 Sector: Solar Product: Develops thin film solar cells using copper indium gallium diselenide (CIGS). References: Solibro AB1 This article is a stub....

  5. Johanna Solar Technology GmbH JST | Open Energy Information

    Open Energy Info (EERE)

    Havel, Brandenburg, Germany Zip: D-14772 Sector: Solar Product: German manufacturer of copper-indium-gallium-sulphide-selenium (CIGSSe) thin-film solar modules. References: Johanna...

  6. HelioVolt Corporation | Open Energy Information

    Open Energy Info (EERE)

    search Name: HelioVolt Corporation Place: Austin, Texas Zip: TX 78744 Product: Copper indium gallium selenide (CIGS) thin-film PV module manufacturer based in Austin,...

  7. Revealing the Preferred Interlayer Orientations and Stackings...

    Office of Scientific and Technical Information (OSTI)

    Revealing the Preferred Interlayer Orientations and Stackings of Two-Dimensional Bilayer Gallium Selenide Crystals Citation Details In-Document Search Title: Revealing the ...

  8. Intrinsic Semiconductor | Open Energy Information

    Open Energy Info (EERE)

    Intrinsic Semiconductor is a privately held emerging growth company focusing on materials and device technologies based on silicon carbide (SiC) and gallium nitride (GaN)...

  9. Cree Inc | Open Energy Information

    Open Energy Info (EERE)

    North Carolina Zip: 27703 Product: Cree develops and manufactures semiconductor materials and devices based on silicon carbide (SiC), gallium nitride (GaN), silicon (Si) and...

  10. JX Crystals Inc | Open Energy Information

    Open Energy Info (EERE)

    Solar Product: JX Crystals designs and manufactures thermophotovoltaic gallium-antimonide cells for solar applications. Coordinates: 47.530095, -122.033799 Show Map Loading...

  11. Optimized Alumina Coagulants for Water Purification - Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    purification. By inserting a single gallium atom in the center of an aluminum oxide cluster, the stability and efficacy of the reagent is greatly improved. This stability also...

  12. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    ... (1) copper silicides (1) critical materials strategy (1) energy conservation, consumption, and utilization materials by design (1) fermions (1) gallium base alloys (1) ...

  13. Smooth and vertical facet formation for AlGaN-based deep-UV laser...

    Office of Scientific and Technical Information (OSTI)

    Sponsoring Org: USDOE Country of Publication: United States Language: English Subject: 36 MATERIALS SCIENCE; 42 ENGINEERING; ALUMINIUM NITRIDES; GALLIUM NITRIDES; ETCHING; LASERS; ...

  14. Luminescence properties of light-emitting diodes based on GaAs with the up-conversion Y{sub 2}O{sub 2}S:Er,Yb luminophor

    SciTech Connect (OSTI)

    Gruzintsev, A. N. [Russian Academy of Sciences, Institute of Problems of Microelectronics Technology (Russian Federation)], E-mail: gran@ipmt-hpm.ac.ru; Barthou, C.; Benalloul, P. [Institute des NanoSciences (France)

    2008-03-15

    Y{sub 2}O{sub 2}S luminophors doped with Er{sup 3+} and Yb{sup 3+} ions are produced by means of solid-phase synthesis and deposited onto standard AL123A infrared light-emitting diodes. When excited with 940 nm radiation from a light-emitting diode, the structures exhibit intense visible up-conversion luminescence. A maximal brightness of 2340 cd/m{sup 2} of green and red up-conversion luminescence at corresponding wavelengths around 550 and 600 nm is observed for the Y{sub 2}O{sub 2}S compound doped with 2 at % Er{sup 3+} ions and 6 at % Yb{sup 3+} ions. The ratio of the intensity of green (or red) up-conversion luminescence to the intensity of infrared Stokes luminescence increases with increasing applied voltage. The efficiency of visible emission of the light-emitting diode structures is {eta} = 1.2 lm/W at an applied voltage of 1.5 V.

  15. Demonstration of InAsBi photoresponse beyond 3.5 μm

    SciTech Connect (OSTI)

    Sandall, I. C. Bastiman, F.; White, B.; Richards, R.; Mendes, D.; David, J. P. R.; Tan, C. H.

    2014-04-28

    An Indium Arsenide Bismide photodiode has been grown, fabricated, and characterized to evaluate its performance in the Mid Wave Infrared region of the spectrum. Spectral response from the diode has been obtained up to a diode temperature of 225 K. At this temperature, the diode has a cut off wavelength of 3.95 μm, compared to 3.41 μm in a reference Indium Arsenide diode, indicating that Bismuth has been incorporated to reduce the band gap of Indium Arsenide by 75 meV. Similar band gap reduction was deduced from the cut off wavelength comparison at 77 K. From the dark current data, shunt resistance values of 8 and 39 Ω at temperatures of 77 and 290 K, respectively, were obtained in our photodiode.

  16. Clean process to destroy arsenic-containing organic compounds with recovery of arsenic

    DOE Patents [OSTI]

    Upadhye, R.S.; Wang, F.T.

    1996-08-13

    A reduction method is provided for the treatment of arsenic-containing organic compounds with simultaneous recovery of pure arsenic. Arsenic-containing organic compounds include pesticides, herbicides, and chemical warfare agents such as Lewisite. The arsenic-containing compound is decomposed using a reducing agent. Arsine gas may be formed directly by using a hydrogen-rich reducing agent, or a metal arsenide may be formed using a pure metal reducing agent. In the latter case, the arsenide is reacted with an acid to form arsine gas. In either case, the arsine gas is then reduced to elemental arsenic. 1 fig.

  17. Clean process to destroy arsenic-containing organic compounds with recovery of arsenic

    DOE Patents [OSTI]

    Upadhye, Ravindra S.; Wang, Francis T.

    1996-01-01

    A reduction method is provided for the treatment of arsenic-containing organic compounds with simultaneous recovery of pure arsenic. Arsenic-containing organic compounds include pesticides, herbicides, and chemical warfare agents such as Lewisite. The arsenic-containing compound is decomposed using a reducing agent. Arsine gas may be formed directly by using a hydrogen-rich reducing agent, or a metal arsenide may be formed using a pure metal reducing agent. In the latter case, the arsenide is reacted with an acid to form arsine gas. In either case, the arsine gas is then reduced to elemental arsenic.

  18. Preparation of CIGS-based solar cells using a buffered electrodeposition bath

    DOE Patents [OSTI]

    Bhattacharya, Raghu Nath

    2007-11-20

    A photovoltaic cell exhibiting an overall conversion efficiency of at least 9.0% is prepared from a copper-indium-gallium-diselenide thin film. The thin film is prepared by simultaneously electroplating copper, indium, gallium, and selenium onto a substrate using a buffered electro-deposition bath. The electrodeposition is followed by adding indium to adjust the final stoichiometry of the thin film.

  19. CX-010895: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Development and Industrialization of Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Light Emitting Diodes LEDs on Patterned Sapphire Substrate (PSS) for Low Cost Emitter Architecture CX(s) Applied: B3.6 Date: 06/27/2013 Location(s): California Offices(s): National Energy Technology Laboratory

  20. Tritium Technology at CNL

    Office of Environmental Management (EM)

    ... Titanium Metal vapour deposition -17- UNRESTRICTED ILLIMIT *GaAs substrate *Large ... from these two samples Delamination of Titanium Metal -20- UNRESTRICTED ILLIMIT ...

  1. Final Report - Vapor Transport Deposition for III-V Thin Film...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Silicon, the dominant photovoltaic (PV) technology, is reaching its fundamental ... III-V semiconductors such as GaAs are used to make the highest-efficiency photovoltaic ...

  2. Search for: All records | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    ... using density functional for systems with a gap is developed to solve for ... Theoretical studies on the dispersion of the nonlinear optical susceptibilities in GaAs, ...

  3. Profiling the Built-In Electrical Potential in III-V Multijunction Solar Cells (Poster)

    SciTech Connect (OSTI)

    Jiang, C.-S.; Friedman, D. J.; Moutinho, H. R.; Al-Jassim, M. M.

    2006-05-01

    We have observed three electrical potentials at the top, tunneling, and bottom junctions of GnInP{sub 2}/GaAs tandem-junction solar cells, by performing the UHV-SKPM measurement. The effect of laser illumination was avoided by using GaAs laser with photon energy of 1.4 eV for the AFM operation. We also observed higher potentials at the atomic steps than on the terraces for both p-type GaInP{sub 2} epitaxial layer and p-type GaAs substrate, and found that the potential at steps of GaAs substrate depends on the step directions.

  4. Thermal Design and Characterization of Heterogeneously Integrated...

    Office of Scientific and Technical Information (OSTI)

    with integrated thermal management on wide-bandgap AlN substrates followed by GaAs substrate removal are demonstrated. Without thermal management, substrate removal after ...

  5. Simple intrinsic defects in InAs : numerical predictions.

    SciTech Connect (OSTI)

    Schultz, Peter Andrew

    2013-03-01

    This Report presents numerical tables summarizing properties of intrinsic defects in indium arsenide, InAs, as computed by density functional theory using semi-local density functionals, intended for use as reference tables for a defect physics package in device models.

  6. Resonant Spin Excitation in the High Temperature Superconductor Ba0.6K0.4Fe2As2

    SciTech Connect (OSTI)

    Christianson, Andrew D; Goremychkin, E. A.; Osborn, R.; Rosenkranz, Stephen; Lumsden, Mark D; Malliakas, C.; Todorov, L.; Claus, H.; Chung, D.Y.; Kanatzidis, M.; Bewley, Robert I.; Guidi, T.

    2008-12-18

    A new family of superconductors containing layers of iron arsenide has attracted considerable interest because of their high transition temperatures (T{sub c}), some of which are >50 K, and because of similarities with the high-{sub c} copper oxide superconductors. In both the iron arsenides and the copper oxides, superconductivity arises when an antiferromagnetically ordered phase has been suppressed by chemical doping. A universal feature of the copper oxide superconductors is the existence of a resonant magnetic excitation, localized in both energy and wavevector, within the superconducting phase. This resonance, which has also been observed in several heavy-fermion superconductors is predicted to occur when the sign of the superconducting energy gap takes opposite values on different parts of the Fermi surface, an unusual gap symmetry which implies that the electron pairing interaction is repulsive at short range. Angle-resolved photoelectron spectroscopy shows no evidence of gap anisotropy in the iron arsenides, but such measurements are insensitive to the phase of the gap on separate parts of the Fermi surface. Here we report inelastic neutron scattering observations of a magnetic resonance below T{sub c} in Ba{sub 0.6}K{sub 0.4}Fe{sub 2}As{sub 2}, a phase-sensitive measurement demonstrating that the superconducting energy gap has unconventional symmetry in the iron arsenide superconductors.

  7. Method of making suspended thin-film semiconductor piezoelectric devices

    DOE Patents [OSTI]

    Casalnuovo, Stephen A.; Frye-Mason, Gregory C.

    2001-01-01

    A process for forming a very thin suspended layer of piezoelectric material of thickness less than 10 microns. The device is made from a combination of GaAs and AlGaAs layers to form either a sensor or an electronic filter. Onto a GaAs substrate is epitaxially deposited a thin (1-5 micron) sacrificial AlGaAs layer, followed by a thin GaAs top layer. In one embodiment the substrate is selectively etched away from below until the AlGaAs layer is reached. Then a second selective etch removes the sacrificial AlGaAs layer, that has acted here as an etch stop, leaving the thin suspended layer of piezoelectric GaAs. In another embodiment, a pattern of small openings is etched through the thin layer of GaAs on top of the device to expose the sacrificial AlGaAs layer. A second selective etch is done through these openings to remove the sacrificial AlGaAs layer, leaving the top GaAs layer suspended over the GaAs substrate. A novel etchant solution containing a surface tension reducing agent is utilized to remove the AlGaAs while preventing buildup of gas bubbles that would otherwise break the thin GaAs layer.

  8. Monolithic high voltage nonlinear transmission line fabrication process

    DOE Patents [OSTI]

    Cooper, Gregory A.

    1994-01-01

    A process for fabricating sequential inductors and varactor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varactor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process.

  9. Monolithic high voltage nonlinear transmission line fabrication process

    DOE Patents [OSTI]

    Cooper, G.A.

    1994-10-04

    A process for fabricating sequential inductors and varistor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varistor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process. 6 figs.

  10. Low-cost, high-efficiency solar cells utilizing GaAs-on-Si technology

    SciTech Connect (OSTI)

    Vernon, S.M. )

    1993-04-01

    This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, [approximately] 1 [times] 10[sup 5] cm[sup [minus]5], as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 [times]10[sup 7] cm[sup [minus]2]. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells.

  11. Low-cost, high-efficiency solar cells utilizing GaAs-on-Si technology. Annual subcontract report, 1 August 1991--31 July 1992

    SciTech Connect (OSTI)

    Vernon, S.M.

    1993-04-01

    This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, {approximately} 1 {times} 10{sup 5} cm{sup {minus}5}, as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 {times}10{sup 7} cm{sup {minus}2}. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells.

  12. Method of making V.sub.3 Ga superconductors

    DOE Patents [OSTI]

    Dew-Hughes, David

    1980-01-01

    An improved method for producing a vanadium-gallium superconductor wire having aluminum as a component thereof is disclosed, said wire being encased in a gallium bearing copper sheath. The superconductors disclosed herein may be fabricated under normal atmospheres and room temperatures by forming a tubular shaped billet having a core composed of an alloy of vanadium and aluminum and an outer sheath composed of an alloy of copper, gallium and aluminum. Thereafter the entire billet is swage reduced to form a wire therefrom and heat treated to form a layer of V.sub.3 Ga in the interior of the wire.

  13. Model of Ni-63 battery with realistic PIN structure (Journal...

    Office of Scientific and Technical Information (OSTI)

    RANGE 01-10; GALLIUM NITRIDES; ILLUMINANCE; MONTE CARLO METHOD; NICKEL 63; SCANNING ELECTRON MICROSCOPY Word Cloud More Like This Full Text Journal Articles DOI: 10.10631.4930870

  14. Summer 2010 Intern Project- Ali Al-Heji | Center for Energy Efficient...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mentor: Robert M. Farrell Faculty Advisor: James S. Speck Department: Materials Indium gallium nitride (InGaN) solar cells show promise for absorbing high-energy photons with ...

  15. Barrier Coatings for Thin Film Solar Cells: Final Subcontract Report, September 1, 2002 -- January 30, 2008

    SciTech Connect (OSTI)

    Olsen, L. C.

    2010-03-01

    This program has involved investigations of the stability of CdTe and copper-indium-gallium-diselenide (CIGS) solar cells under damp heat conditions and effects of barrier coatings.

  16. A-15 Superconducting composite wires and a method for making

    DOE Patents [OSTI]

    Suenaga, Masaki; Klamut, Carl J.; Luhman, Thomas S.

    1984-01-01

    A method for fabricating superconducting wires wherein a billet of copper containing filaments of niobium or vanadium is rolled to form a strip which is wrapped about a tin-alloy core to form a composite. The alloy is a tin-copper alloy for niobium filaments and a gallium-copper alloy for vanadium filaments. The composite is then drawn down to a desired wire size and heat treated. During the heat treatment process, the tin in the bronze reacts with the niobium to form the superconductor niobium tin. In the case where vanadium is used, the gallium in the gallium bronze reacts with the vanadium to form the superconductor vanadium gallium. This new process eliminates the costly annealing steps, external tin plating and drilling of bronze ingots required in a number of prior art processes.

  17. Wrapping process for fabrication of A-15 superconducting composite wires

    DOE Patents [OSTI]

    Suenaga, M.; Klamut, C.J.; Luhman, T.S.

    1980-08-15

    A method for fabricating superconducting wires wherein a billet of copper containing filaments of niobium or vanadium is rolled to form a strip which is wrapped about a tin-alloy core to form a composite. The alloy is a tin-copper alloy for niobium filaments and a gallium-copper alloy for vanadium filaments. The composite is then drawn down to a desired wire size and heat treated. During the heat treatment process, the tin in the bronze reacts with the niobium to form the superconductor niobium tin. In the case where vanadium is used, the gallium in the gallium bronze reacts with the vanadium to form the superconductor vanadium gallium. This new process eliminates the costly annealing steps, external tin plating and drilling of bronze ingots required in a number of prior art processes.

  18. Thin-Film Photovoltaics on Solar House

    Broader source: Energy.gov [DOE]

    In this photograph, people are reflected on Team Germany's window louvers with integrated thin-film copper indium gallium selenide (CIGS) cells during the U.S. Department of Energy Solar Decathlon...

  19. PROJECT PROFILE: University of Illinois-Urbana Champaign (PREDICTS...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    how to reduce the instability of materials used for copper indium gallium selenide solar (CIGS) cells or thin film photovoltaics (PV) when they are exposed to water and light. ...

  20. Nuvosun Inc | Open Energy Information

    Open Energy Info (EERE)

    Nuvosun Inc Place: Palo Alto, California Zip: 94303-4601 Product: California-based copper indium gallium (di)selenide (CIGS) thin film PV maker. References: Nuvosun Inc1 This...

  1. Taransys Inc | Open Energy Information

    Open Energy Info (EERE)

    Taransys Inc Jump to: navigation, search Name: Taransys Inc. Place: Ottawa, Ontario, Canada Zip: K2K 2E2 Product: The company specialises in gallium nitride technologies, focussing...

  2. CX-010873: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Ammonothermal Bulk Gallium Nitride Crystal Growth for Energy Efficient Lightning and Power Electronics CX(s) Applied: B3.6 Date: 05/22/2013 Location(s): California Offices(s): Advanced Research Projects Agency-Energy

  3. Applied Materials Develops an Advanced Epitaxial Growth System to Bring Down LED Costs

    Broader source: Energy.gov [DOE]

    With the help of DOE funding, Applied Materials has developed an advanced epitaxial growth system for gallium nitride (GaN) LED devices that decreases operating costs, increases internal quantum efficiency, and improves binning yields.

  4. Understanding Drooping Light Emitting Diodes CEEM | U.S. DOE...

    Office of Science (SC) Website

    Understanding "droop" may result in cheaper, more efficient LEDs; LEDs are more energy ... indium in Indium Gallium Nitride (InGaN) green LEDs caused a decrease in light intensity. ...

  5. CX-004937: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Transphorm, Inc. -High Performance Gallium Nitride High Electron Mobility Transistor Modules for Agile Power ElectronicsCX(s) Applied: B3.6Date: 08/05/2010Location(s): CaliforniaOffice(s): Advanced Research Projects Agency - Energy

  6. Spectral properties of a novel laser crystal Y3(In,Ga)2Ga3O12:Cr(3+)--translation

    SciTech Connect (OSTI)

    Li, Y.; Tang, H.; Hang, Y.; Chen, S.

    1991-11-19

    Spectral properties of a novel phonon terminated laser crystal Yttrium(3)(Indium, Gallium)(2)Gallium(3)Oxygen(12): Chromium(3+) grown by the flux method are reported for the first time. The results show that the spectral properties of this novel crystal are compatible with those of Gadolinium(3)(Selenium, Gallium)(3)Gallium(3)Oxygen(12): Chromium(3+) and is a potential ambient temperature tunable laser crystal. Gadolinium(3)(Scandium, Gallium)(2)Gallium(3)Oxygen(12): Chromium(3+) (shortened to GSGG:CR3+) is a type of phonon-terminated laser crystal with excellent capabilities. It has a relatively weak crystal field and relatively strong electron-phonon coupling. At room temperatures a strong terminal phonon emission spectrum with a half width of about 100 nm can be observed. At the same time, experimentally at room temperatures, a wide band continuous tunable laser emission has been observed. Since it has been reported, a great deal of attention has been paid to it. However, since Scandium is rare and expensive its applications are limited.

  7. DEDALOS NREL: Cooperative Research and Development Final Report, CRADA Number CRD-07-237

    SciTech Connect (OSTI)

    Friedman, D.

    2013-06-01

    Currently High Concentration Photovoltaic (HCPV) terrestrial modules are based on the combination of optic elements that concentrate the sunlight into much smaller GaAs space cells to produce electricity. GaAs cell technology has been well developed for space applications during the last two decades, but the use of GaAs cells under concentrated sunlight in terrestrial applications leaves unanswered questions about performance, durability and reliability. The work to be performed under this CRADA will set the basis for the design of high-performance, durable and reliable HCPV terrestrial modules that will bring down electricity production costs in the next five years.

  8. Comparison of steady-state and transient characteristics of lattice-matched and strained InGaAs-AlGaAs (on GaAs) and InGaAs-AlInAs (on InP) quantum-well lasers

    SciTech Connect (OSTI)

    Lam, Y.; Singh, J. ); Loehr, J.P. )

    1992-05-01

    This paper reports on numerical techniques to study the output spectra and to solve the multimode coupled rate equations including TE and TM propagations for In{sub x}Ga{sub 1{minus}x}As-Al{sub 0.3}Ga{sub 0.7}As and In{sub 0.53+x}Ga{sub 0.47{minus}x}As-Al{sub 0.48}In{sub 0.52}As quantum well lasers. Optical properties are calculated from a 4 {times} 4 k {center dot} p bandstructure and strain effects are included with the deformation potential theory. The authors find that an introduction of 1.4% compressive strain to the quantum well results in roughly 3-4 times improvement in the intrinsic static characteristics in terms of lower threshold current, greater mode suppression, and lower nonlashing photon population in the laser cavity. The authors also identify the role of strain on the large signal temporal response. If the laser is switched from the off state to a given photon density in the lasing mode, then the strained system exhibits a faster intrinsic time response. However, if the lasers are switched to equal total photon density, then the strained system has a slower time response. The authors also include calculated CHSH Auger rates in our model and find that the main effect of Auger recombination is to greatly increase the threshold current and to shorten the response time to large signal switching.

  9. 230 s room-temperature storage time and 1.14 eV hole localization energy in In{sub 0.5}Ga{sub 0.5}As quantum dots on a GaAs interlayer in GaP with an AlP barrier

    SciTech Connect (OSTI)

    Bonato, Leo Sala, Elisa M.; Stracke, Gernot; Nowozin, Tobias; Strittmatter, André; Ajour, Mohammed Nasser; Daqrouq, Khaled; Bimberg, Dieter

    2015-01-26

    A GaP n{sup +}p-diode containing In{sub 0.5}Ga{sub 0.5}As quantum dots (QDs) and an AlP barrier is characterized electrically, together with two reference samples: a simple n{sup +}p-diode and an n{sup +}p-diode with AlP barrier. Localization energy, capture cross-section, and storage time for holes in the QDs are determined using deep-level transient spectroscopy. The localization energy is 1.14(±0.04) eV, yielding a storage time at room temperature of 230(±60) s, which marks an improvement of 2 orders of magnitude compared to the former record value in QDs. Alternative material systems are proposed for still higher localization energies and longer storage times.

  10. Weyl Fermions Discovered After 85 Years

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Weyl Fermions Discovered After 85 Years Print An international team led by Princeton University scientists has discovered an elusive massless particle first theorized 85 years ago: the Weyl fermion. It was detected as an emergent quasiparticle in synthetic crystals of the semimetal, tantalum arsenide (TaAs). Using angle-resolved photoemission spectroscopy (ARPES), the researchers studied the surface and bulk band structure of TaAs. The results exhibit the features-cones, nodes, and arcs-that

  11. Weyl Fermions Discovered After 85 Years

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Weyl Fermions Discovered After 85 Years Print An international team led by Princeton University scientists has discovered an elusive massless particle first theorized 85 years ago: the Weyl fermion. It was detected as an emergent quasiparticle in synthetic crystals of the semimetal, tantalum arsenide (TaAs). Using angle-resolved photoemission spectroscopy (ARPES), the researchers studied the surface and bulk band structure of TaAs. The results exhibit the features-cones, nodes, and arcs-that

  12. Weyl Fermions Discovered After 85 Years

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Weyl Fermions Discovered After 85 Years Print An international team led by Princeton University scientists has discovered an elusive massless particle first theorized 85 years ago: the Weyl fermion. It was detected as an emergent quasiparticle in synthetic crystals of the semimetal, tantalum arsenide (TaAs). Using angle-resolved photoemission spectroscopy (ARPES), the researchers studied the surface and bulk band structure of TaAs. The results exhibit the features-cones, nodes, and arcs-that

  13. Weyl Fermions Discovered After 85 Years

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Weyl Fermions Discovered After 85 Years Print An international team led by Princeton University scientists has discovered an elusive massless particle first theorized 85 years ago: the Weyl fermion. It was detected as an emergent quasiparticle in synthetic crystals of the semimetal, tantalum arsenide (TaAs). Using angle-resolved photoemission spectroscopy (ARPES), the researchers studied the surface and bulk band structure of TaAs. The results exhibit the features-cones, nodes, and arcs-that

  14. Weyl Fermions Discovered After 85 Years

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Weyl Fermions Discovered After 85 Years Weyl Fermions Discovered After 85 Years Print Wednesday, 09 December 2015 00:00 An international team led by Princeton University scientists has discovered an elusive massless particle first theorized 85 years ago: the Weyl fermion. It was detected as an emergent quasiparticle in synthetic crystals of the semimetal, tantalum arsenide (TaAs). Using angle-resolved photoemission spectroscopy (ARPES), the researchers studied the surface and bulk band structure

  15. Weyl Fermions Discovered After 85 Years

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Weyl Fermions Discovered After 85 Years Print An international team led by Princeton University scientists has discovered an elusive massless particle first theorized 85 years ago: the Weyl fermion. It was detected as an emergent quasiparticle in synthetic crystals of the semimetal, tantalum arsenide (TaAs). Using angle-resolved photoemission spectroscopy (ARPES), the researchers studied the surface and bulk band structure of TaAs. The results exhibit the features-cones, nodes, and arcs-that

  16. Weyl Fermions Discovered After 85 Years

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Weyl Fermions Discovered After 85 Years Print An international team led by Princeton University scientists has discovered an elusive massless particle first theorized 85 years ago: the Weyl fermion. It was detected as an emergent quasiparticle in synthetic crystals of the semimetal, tantalum arsenide (TaAs). Using angle-resolved photoemission spectroscopy (ARPES), the researchers studied the surface and bulk band structure of TaAs. The results exhibit the features-cones, nodes, and arcs-that

  17. Sulfide-Driven Arsenic Mobilization from Arsenopyrite and Black Shale Pyrite

    SciTech Connect (OSTI)

    Zhu, W.; Young, L; Yee, N; Serfes, M; Rhine, E; Reinfelder, J

    2008-01-01

    We examined the hypothesis that sulfide drives arsenic mobilization from pyritic black shale by a sulfide-arsenide exchange and oxidation reaction in which sulfide replaces arsenic in arsenopyrite forming pyrite, and arsenide (As-1) is concurrently oxidized to soluble arsenite (As+3). This hypothesis was tested in a series of sulfide-arsenide exchange experiments with arsenopyrite (FeAsS), homogenized black shale from the Newark Basin (Lockatong formation), and pyrite isolated from Newark Basin black shale incubated under oxic (21% O2), hypoxic (2% O2, 98% N2), and anoxic (5% H2, 95% N2) conditions. The oxidation state of arsenic in Newark Basin black shale pyrite was determined using X-ray absorption-near edge structure spectroscopy (XANES). Incubation results show that sulfide (1 mM initial concentration) increases arsenic mobilization to the dissolved phase from all three solids under oxic and hypoxic, but not anoxic conditions. Indeed under oxic and hypoxic conditions, the presence of sulfide resulted in the mobilization in 48 h of 13-16 times more arsenic from arsenopyrite and 6-11 times more arsenic from isolated black shale pyrite than in sulfide-free controls. XANES results show that arsenic in Newark Basin black shale pyrite has the same oxidation state as that in FeAsS (-1) and thus extend the sulfide-arsenide exchange mechanism of arsenic mobilization to sedimentary rock, black shale pyrite. Biologically active incubations of whole black shale and its resident microorganisms under sulfate reducing conditions resulted in sevenfold higher mobilization of soluble arsenic than sterile controls. Taken together, our results indicate that sulfide-driven arsenic mobilization would be most important under conditions of redox disequilibrium, such as when sulfate-reducing bacteria release sulfide into oxic groundwater, and that microbial sulfide production is expected to enhance arsenic mobilization in sedimentary rock aquifers with major pyrite-bearing, black

  18. Final Technical Report of project: "Contactless Real-Time Monitoring of Paper Mechanical Behavior During Papermaking"

    SciTech Connect (OSTI)

    Emmanuel Lafond; Paul Ridgway; Ted Jackson; Rick Russo; Ken Telschow; Vance Deason; Yves Berthelot; David Griggs; Xinya Zhang; Gary Baum

    2005-08-30

    The early precursors of laser ultrasonics on paper were Prof. Y. Berthelot from the Georgia Institute of Technology/Mechanical Engineering department, and Prof. P. Brodeur from the Institute of Paper Science and Technology, both located in Atlanta, Georgia. The first Ph.D. thesis that shed quite some light on the topic, but also left some questions unanswered, was completed by Mont A. Johnson in 1996. Mont Johnson was Prof. Berthelot's student at Georgia Tech. In 1997 P. Brodeur proposed a project involving himself, Y. Berthelot, Dr. Ken Telschow and Mr. Vance Deason from INL, Honeywell-Measurex and Dr. Rick Russo from LBNL. The first time the proposal was not accepted and P. Brodeur decided to re-propose it without the involvement from LBNL. Rick Russo proposed a separate project on the same topic on his side. Both proposals were finally accepted and work started in the fall of 1997 on the two projects. Early on, the biggest challenge was to find an optical detection method which could detect laser-induced displacements of the web surface that are of the order of .1 micron in the ultrasonic range. This was to be done while the web was having an out-of-plane amplitude of motion in the mm range due to web flutter; while moving at 10 m/s to 30 m/s in the plane of the web, on the paper machine. Both teams grappled with the same problems and tried similar methods in some cases, but came up with two similar but different solutions one year later. The IPST, GT, INL team found that an interferometer made by Lasson Technologies Inc. using the photo-induced electro-motive force in Gallium Arsenide was able to detect ultrasonic waves up to 12-15 m/s. It also developed in house an interferometer using the Two-Wave Mixing effect in photorefractive crystals that showed good promises for on-line applications, and experimented with a scanning mirror to reduce motion-induced texture noise from the web and improve signal to noise ratio. On its side, LBNL had the idea to combine a

  19. SolFocus Inc | Open Energy Information

    Open Energy Info (EERE)

    Inc Place: California Zip: 94043 Product: California-based developer of high concentration PV (CPV) technology using triple junction GaAs cells. References: SolFocus Inc1...

  20. PNIC.F.F2a

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Task 3 - Chemical Mechanical Polishing The chemical mechanical polishing of ELO and non-ELO (before lift-off) of InP surfaces and GaAs surfaces would be investigated with various ...

  1. Laboratory Testing at STC | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Improved Performance CdTe Solar Cells PID Failure of c-Si and Thin-Film Modules and Possible Correlation with Leakage Currents High-Efficiency GaAs Thin-Film Solar Cell Reliability

  2. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Mreke, Janina Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  3. AIXTRON AG | Open Energy Information

    Open Energy Info (EERE)

    industry. Their equipment is used in the manufacture of LEDs, germanium and GaAs solar cells and OLEDs. Coordinates: 50.778138, 6.088498 Show Map Loading map......

  4. High-harmonic XUV source for time- and angle-resolved photoemission...

    Office of Scientific and Technical Information (OSTI)

    We present a laser-based apparatus for visible pumpXUV probe time- and angle-resolved ... from insulators (UOsub 2) and ultrafast pumpprobe processes in semiconductors (GaAs). ...

  5. Cyrium Technologies Inc | Open Energy Information

    Open Energy Info (EERE)

    Place: Ottowa, Ontario, Canada Zip: K1A 0R6 Product: Canadian manufacturer of GaAs photovoltaic (PV) cells for terrestrial and space use. Coordinates: 38.554325, -121.784714...

  6. Ferromagnetic thin films

    DOE Patents [OSTI]

    Krishnan, K.M.

    1994-12-20

    A ferromagnetic [delta]-Mn[sub 1[minus]x]Ga[sub x] thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of [delta]-Mn[sub 1[minus]x]Ga[sub x] and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4[+-]0.05. 7 figures.

  7. Photonic Power Systems Inc | Open Energy Information

    Open Energy Info (EERE)

    Zip: 95014-2305 Product: Provider of GaAs and InP-based solutions for delivering electrical power over fibre for numerous electronic applications. Coordinates: 37.31884,...

  8. Technical Session II Talks | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Print Text Size: A A A FeedbackShare Page Detector R&D at LBNL (Denes) .pdf file (6.2MB) GaAs Detector (Durbin) .pdf file (450KB) Advanced Neutron Detectors (Smith) .pdf file ...

  9. Cavity-enhanced single photon emission from site-controlled In(Ga)As quantum dots fabricated using nanoimprint lithography

    SciTech Connect (OSTI)

    Tommila, J.; Hakkarainen, T. V.; Schramm, A. Guina, M.; Belykh, V. V.; Sibeldin, N. N.; Heinonen, E.

    2014-05-26

    We report on the emission dynamics of single In(Ga)As quantum dots formed in etched GaAs pits and integrated into micropillar cavities. The site-controlled quantum dots were fabricated by molecular beam epitaxy on nanoimprint lithography patterned GaAs(001) surfaces. Triggered single photon emission confirmed by photon autocorrelation measurements is demonstrated. Time-resolved photoluminescence experiments clearly show an effect of the cavity on the spontaneous emission rate of the quantum dot.

  10. Reply to “Comment on ‘Optically pumped spin-exchange polarized-electron source’ ”

    SciTech Connect (OSTI)

    Pirbhai, M.; Knepper, J.; Litaker, E. T.; Tupa, D.; Gay, T. J.

    2015-05-26

    In the proceeding Comment [1] on our recent report of a Rb spin-exchange polarized-electron source [2], Williams et al. contend: (a) that our source is poorly characterized compared with modern GaAs sources, (b) that we have overstated the difficulties of using GaAs photoemission sources, and (c) that our explanation of various physics issues related to the source's operating principles are not cogent.

  11. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  12. Reply to “Comment on ‘Optically pumped spin-exchange polarized-electron source’ ”

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Pirbhai, M.; Knepper, J.; Litaker, E. T.; Tupa, D.; Gay, T. J.

    2015-05-26

    In the proceeding Comment [1] on our recent report of a Rb spin-exchange polarized-electron source [2], Williams et al. contend: (a) that our source is poorly characterized compared with modern GaAs sources, (b) that we have overstated the difficulties of using GaAs photoemission sources, and (c) that our explanation of various physics issues related to the source's operating principles are not cogent.

  13. Carbon doping of III-V compound semiconductors

    SciTech Connect (OSTI)

    Moll, A.J.

    1994-09-01

    Focus of the study is C acceptor doping of GaAs, since C diffusion coefficient is at least one order of magnitude lower than that of other common p-type dopants in GaAs. C ion implantation results in a concentration of free holes in the valence band < 10% of that of the implanted C atoms for doses > 10{sup 14}/cm{sup 2}. Rutherford backscattering, electrical measurements, Raman spectroscopy, and Fourier transform infrared spectroscopy were amonth the techniques used. Ga co-implantation increased the C activation in two steps: first, the additional radiation damage creates vacant As sites that the implanted C can occupy, and second, it maintains the stoichiometry of the implanted layer, reducing the number of compensating native defects. In InP, the behavior of C was different from that in GaAs. C acts as n-type dopant in the In site; however, its incorporation by implantation was difficult to control; experiments using P co-implants were inconsistent. The lattice position of inactive C in GaAs in implanted and epitaxial layers is discussed; evidence for formation of C precipitates in GaAs and InP was found. Correlation of the results with literature on C doping in III-V semiconductors led to a phenomenological description of C in III-V compounds (particularly GaAs): The behavior of C is controlled by the chemical nature of C and the instrinsic Fermi level stabilization energy of the material.

  14. Group III-nitride thin films grown using MBE and bismuth

    DOE Patents [OSTI]

    Kisielowski, Christian K.; Rubin, Michael

    2002-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

  15. Group III-nitride thin films grown using MBE and bismuth

    DOE Patents [OSTI]

    Kisielowski, Christian K.; Rubin, Michael

    2000-01-01

    The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

  16. Gallium Pnictides of the Alkaline Earth Metals, Synthesized by Means of the Flux Method: Crystal Structures and Properties of CaGa[subscript 2]Pn[subscript 2], SrGa[subscript 2]As[subscript 2], Ba[subscript 2]Ga[subscript 5]As[subscript 5], and Ba[subscript 4]Ga[subscript 5]Pn[subscript 8] (Pn = P or As)

    SciTech Connect (OSTI)

    He, Hua; Stearrett, Ryan; Nowak, Edmund R.; Bobev, Svilen

    2014-05-28

    The focus of this paper is on the structural characterization of the new Zintl phases CaGa{sub 2}P{sub 2}, CaGa{sub 2}As{sub 2}, SrGa{sub 2}As{sub 2}, and Ba{sub 2}Ga{sub 5}As{sub 5}, and the solid solution (Ba{sub 0.85(1)}Sr{sub 0.15}){sub 2}Ga{sub 5}As{sub 5}, all of which were synthesized from molten metal fluxes.CaGa{sub 2}P{sub 2}, CaGa{sub 2}As{sub 2}, and SrGa{sub 2}As{sub 2} have layered structures with polyanionic layers made of ethane-like Ga{sub 2}P6 and Ga{sub 2}As6 motifs fused through common edges; the polyanionic substructure in Ba{sub 2}Ga{sub 5}As{sub 5} consists of condensed Ga{sub 2}As6 units and GaAs{sub 4} tetrahedra. Ba{sub 4}Ga{sub 5}P{sub 8} and Ba{sub 4}Ga{sub 5}As{sub 8}, another pair of new compounds with channel-like 3D structures, were also synthesized from metal fluxes, and their structures were established from single-crystal X-ray and synchrotron powder diffraction. They are based on GaP{sub 4} and GaAs{sub 4} tetrahedra, with parts of their structures being heavily disordered. The electronic structures computed with the linear muffin-tin orbital (LMTO) method are discussed as well, alongside the thermopower and the electrical conductivity, measured on single crystals of Ba{sub 2}Ga{sub 5}As{sub 5} and the solid solution (Ba{sub 0.85(1)}Sr{sub 0.15}){sub 2} Ga{sub 5}As{sub 5}. They demonstrate that such an approach would be an effective way to fine-tune the transport properties.

  17. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  18. SOLDERING OF ALUMINUM BASE METALS

    DOE Patents [OSTI]

    Erickson, G.F.

    1958-02-25

    This patent deals with the soldering of aluminum to metals of different types, such as copper, brass, and iron. This is accomplished by heating the aluminum metal to be soldered to slightly above 30 deg C, rubbing a small amount of metallic gallium into the part of the surface to be soldered, whereby an aluminum--gallium alloy forms on the surface, and then heating the aluminum piece to the melting point of lead--tin soft solder, applying lead--tin soft solder to this alloyed surface, and combining the aluminum with the other metal to which it is to be soldered.

  19. Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation

    SciTech Connect (OSTI)

    Tanta, R.; Krogstrup, P.; Nygård, J.; Jespersen, T. S.; Madsen, M. H.; Liao, Z.; Vosch, T.

    2015-12-14

    The thermal gradients along indium arsenide nanowires were engineered by a combination of fabricated micro-trenches in the supporting substrate and focused laser irradiation. This allowed local spatial control of thermally activated oxidation reactions of the nanowire on the scale of the diffraction limit. The locality of the oxidation was detected by micro-Raman mapping, and the results were found to be consistent with numerical simulations of the temperature profile. Applying the technique to nanowires in electrical devices the locally oxidized nanowires remained conducting with a lower conductance as expected for an effectively thinner conducting core.

  20. Site-controlled fabrication of Ga nanodroplets by focused ion beam

    SciTech Connect (OSTI)

    Xu, Xingliang; Wang, Zhiming M.; Wu, Jiang; Li, Handong; Zhou, Zhihua; Wang, Xiaodong

    2014-03-31

    Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

  1. Solid-state lighting :lamp targets and implications for the semiconductor chip.

    SciTech Connect (OSTI)

    Tsao, Jeffrey Yeenien

    2003-01-01

    Once again GaAs MANTECH (with III-Vs Review acting as media sponsor) promises to deliver high quality papers covering all aspects of compound semiconductor manufacturing, with speakers from leading-edge equipment, epiwafer, and device suppliers. Since its launch in 1986, GaAs MANTECH has consistently been one of the highlight events of the conference calendar. Coverage includes all compound-based semiconductors, not just GaAs. With an excellent technical program comprising of almost 80 papers and expanded workshop sessions, the 2003 event should prove the best ever. As in previous years, an Interactive Forum and Ugly Picture Contest will be included. A major attraction will be the associated exhibition, with more than 70 suppliers expected to participate.

  2. Low-Cost Growth of III-V Layers on Si Using Close-Spaced Vapor Transport

    SciTech Connect (OSTI)

    Boucher, Jason W.; Greenaway, Ann L.; Ritenour, Andrew J.; Davis, Allison L.; Bachman, Benjamin F.; Aloni, Shaul; Boettcher, Shannon W.

    2015-06-14

    Close-spaced vapor transport (CSVT) uses solid precursors to deposit material at high rates and with high precursor utilization. The use of solid precursors could significantly reduce the costs associated with III-V photovoltaics, particularly if growth on Si substrates can be demonstrated. We present preliminary results of the growth of GaAs1-xPx with x ≈ 0.3 and 0.6, showing that CSVT can be used to produce III-V-V’ alloys with band gaps suitable for tandem devices. Additionally, we have grown GaAs on Si by first thermally depositing films of Ge and subsequently depositing GaAs by CSVT. Patterning the Ge into islands prevents cracking due to thermal mismatch and is useful for potential tandem structures.

  3. Band structure of the epitaxial Fe/MgO/GaAs(001) tunnel junction studied by x-ray and ultraviolet photoelectron spectroscopies

    SciTech Connect (OSTI)

    Lu, Y.; Le Breton, J. C.; Turban, P.; Lepine, B.; Schieffer, P.; Jezequel, G.

    2006-10-09

    The electronic band structure in the epitaxial Fe/MgO/GaAs(001) tunnel junction has been studied by x-ray and ultraviolet photoelectron spectroscopy measurements. The Schottky barrier height (SBH) of Fe on MgO/GaAs heterostructure is determined to be 3.3{+-}0.1 eV, which sets the Fe Fermi level at about 0.3 eV above the GaAs valence band maximum. This SBH is also exactly the same as that measured from Fe on MgO monocrystal. After Fe deposition, no band bending change is observed in MgO and GaAs underlayers. On the contrary, Au and Al depositions led to clear variation of the band bending in both MgO and GaAs layers. This effect is analyzed as a fingerprint of defect states at the MgO/GaAs interface.

  4. Evidence of a New Hydrogen Complex in Dilute Nitride Alloys

    SciTech Connect (OSTI)

    Bisognin, G.; De Salvador, D.; Napolitani, E.; Berti, M.; Polimeni, A.; Felici, M.; Capizzi, M.; Guengerich, M.; Klar, P. J.; Bais, G.; Jabeen, F.; Piccin, M.; Rubini, S.; Martelli, F.; Franciosi, A.

    2007-04-10

    By means of high resolution x-ray diffraction and photoluminescence measurements we demonstrate that, as a result of hydrogen irradiation of GaAs1-xNx/GaAs, the original tensile strain of the as-grown material is reversed into a compressive one and that, at the same time, N atoms are electronically passivated. We show that the amount of compressive strain is determined exclusively by N concentration. This compressive strain is caused by the formation of peculiar N-H complexes and disappears after moderate annealing, while N electronic passivation still holds. These experimental results demonstrate that the lattice properties of fully-hydrogenated GaAs1-xNx/GaAs are ruled by a H complex which is different and less stable than that responsible for electronic passivation of N in GaAs1-xNx/GaAs.

  5. Substrate structures for InP-based devices

    DOE Patents [OSTI]

    Wanlass, Mark W.; Sheldon, Peter

    1990-01-01

    A substrate structure for an InP-based semiconductor device having an InP based film is disclosed. The substrate structure includes a substrate region having a lightweight bulk substrate and an upper GaAs layer. An interconnecting region is disposed between the substrate region and the InP-based device. The interconnecting region includes a compositionally graded intermediate layer substantially lattice-matched at one end to the GaAs layer and substantially lattice-matched at the opposite end to the InP-based film. The interconnecting region further includes a dislocation mechanism disposed between the GaAs layer and the InP-based film in cooperation with the graded intermediate layer, the buffer mechanism blocking and inhibiting propagation of threading dislocations between the substrate region, and the InP-based device.

  6. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  7. Activation of small alkanes in Ga-exchanged zeolites: A quantum chemical study of ethane dehydrogenation

    SciTech Connect (OSTI)

    Frash, M.V.; Santen, R.A. van

    2000-03-23

    Quantum chemical calculations on the mechanism of ethane dehydrogenation catalyzed by Ga-exchanged zeolites have been undertaken. Two forms of gallium, adsorbed dihydride gallium ion GaH{sub 2}+Z{sup {minus}} and adsorbed gallyl ion [Ga=O]{sup +}Z{sup {minus}}, were considered. It was found that GaH{sub 2}{sup +}Z{sup {minus}} is the likely active catalyst. On the contrary, [Ga=O]{sup +}Z{sup {minus}} cannot be a working catalyst in nonoxidative conditions, because regeneration of this form is very difficult. Activation of ethane by GaH{sub 2}{sup +}Z{sup {minus}} occurs via an alkyl mechanism and the gallium atom acts as an acceptor of the ethyl group. The carbenium activation of ethane, with gallium abstracting a hydride ion, is much (ca. 51 kcal/mol) more difficult. The catalytic cycle for the alkyl activation consists of three elementary steps: (1) rupture of the ethane C-H bond; (2) formation of dihydrogen from the Bronsted proton and hydrogen bound to Ga; and (3) formation of ethene from the ethyl group bound to Ga. The best estimates (MP2/6--311++G(2df,p)//B3LYP/6--31G*) for the activation energies of these three steps are 36.9, ca. 0, and 57.9 kcal/mol, respectively.

  8. Cantilever Epitaxy Process Wins R&D 100 Award

    Broader source: Energy.gov [DOE]

    Sandia National Laboratories received an R&D 100 Award from R&D Magazine for development of a new process for growing gallium nitride on an etched sapphire substrate. The process, called cantilever epitaxy, promises to make brighter and more efficient green, blue, and white LEDs.

  9. CX-010974: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory

  10. CX-010973: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory

  11. CX-000845: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    25A2445 - Ammonothermal Bulk Gallium Nitride (GaN) Crystal Growth for Energy Efficient LightingCX(s) Applied: B3.6Date: 01/15/2010Location(s): New YorkOffice(s): Advanced Research Projects Agency - Energy

  12. CX-001137: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Advanced Epi Tools for Gallium Nitride LED (Light Emitting Diode) DevicesCX(s) Applied: B3.6Date: 03/05/2010Location(s): Santa Clara, CaliforniaOffice(s): Energy Efficiency and Renewable Energy, National Energy Technology Laboratory

  13. Method of forming particulate materials for thin-film solar cells

    DOE Patents [OSTI]

    Eberspacher, Chris; Pauls, Karen Lea

    2004-11-23

    A method for preparing particulate materials useful in fabricating thin-film solar cells is disclosed. Particulate materials is prepared by the method include for example materials comprising copper and indium and/or gallium in the form of single-phase, mixed-metal oxide particulates; multi-phase, mixed-metal particulates comprising a metal oxide; and multinary metal particulates.

  14. Investigation on growth and laser properties of GGG:(Nd,Cr) single crystals

    SciTech Connect (OSTI)

    Zhang; Lin; Liu; Liu; Zhu

    1986-04-04

    Investigation on the growth and laser properties of gadolinium gallium garnet crystal doped with neodymium and chromium is reported. As the segregation coefficient of Nd in GGG is less than 1 and that of Cr is greater than 1, a modified Czochralski method for growth is adopted in order to keep the dopants being uniform in the grown crystal.

  15. Aluminum battery alloys

    DOE Patents [OSTI]

    Thompson, D.S.; Scott, D.H.

    1984-09-28

    Aluminum alloys suitable for use as anode structures in electrochemical cells are disclosed. These alloys include iron levels higher than previously felt possible, due to the presence of controlled amounts of manganese, with possible additions of magnesium and controlled amounts of gallium.

  16. Aluminum battery alloys

    DOE Patents [OSTI]

    Thompson, David S.; Scott, Darwin H.

    1985-01-01

    Aluminum alloys suitable for use as anode structures in electrochemical cs are disclosed. These alloys include iron levels higher than previously felt possible, due to the presence of controlled amounts of manganese, with possible additions of magnesium and controlled amounts of gallium.

  17. CX-011468: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Advanced Low-Cost Silicon-Carbide (SiC) and Gallium-Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 10/29/2013 Location(s): Michigan Offices(s): National Energy Technology Laboratory

  18. CX-009000: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    "High Quality, Low Cost Bulk Gallium Nitride (GaN) Substrates Grown by the Electrochemical Solution Growth Method CX(s) Applied: A9, B3.6 Date: 08/20/2012 Location(s): Missouri Offices(s): Golden Field Office"

  19. CX-002541: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Emerging Renewables Industries: Copper, Indium, Gallium, Selenium (CIGS) Linear Source Thermal DepositionCX(s) Applied: B2.2, B5.1Date: 05/19/2010Location(s): St. Paul, MinnesotaOffice(s): Energy Efficiency and Renewable Energy, Golden Field Office

  20. Method for non-invasive detection of ocular melanoma

    DOE Patents [OSTI]

    Lambrecht, R.M.; Packer, S.

    1984-10-30

    An apparatus and method is disclosed for diagnosing ocular cancer that is both non-invasive and accurate. The apparatus comprises two radiation detectors positioned before each of the patient's eyes which will measure the radiation level produced in each eye after the administration of a tumor-localizing radiopharmaceutical such as gallium-67. 2 figs.

  1. Differential radioactivity monitor for non-invasive detection of ocular melanoma

    DOE Patents [OSTI]

    Lambrecht, R.M.; Packer, S.

    1982-09-23

    There is described an apparatus and method for diagnosing ocular cancer that is both non-invasive and accurate which comprises two radiation detectors positioned before each of the patient's eyes which will measure the radiation level produced in each eye after the administration of a tumor-localizing radiopharmaceutical such as gallium-67.

  2. CX-006555: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Gallium Nitride Electronics for Grid ApplicationsCX(s) Applied: A1, A2, A9, A11, B3.6Date: 08/17/2011Location(s): Lexington, MassachusettsOffice(s): Electricity Delivery and Energy Reliability, National Energy Technology Laboratory

  3. Liquid precursor inks for deposition of In--Se, Ga--Se and In--Ga--Se

    SciTech Connect (OSTI)

    Curtis, Calvin J.; Hersh, Peter A.; Miedaner, Alexander; Habas, Susan; van Hest, Maikel; Ginley, David S.

    2015-08-11

    An ink includes a solution of selenium in ethylene diamine solvent and a solution of at least one metal salt selected from the group consisting of an indium salt or a gallium salt in at least one solvent including an organic amide. The organic amide can include dimethylformamide. The organic amide can include N-methylpyrrolidone.

  4. CX-006556: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Gallium Nitride Electronics for Grid ApplicationsCX(s) Applied: A1, A2, A9, A11, B3.6Date: 08/17/2011Location(s): Cambridge, MassachusettsOffice(s): Electricity Delivery and Energy Reliability, National Energy Technology Laboratory

  5. Method for non-invasive detection of ocular melanoma

    DOE Patents [OSTI]

    Lambrecht, Richard M.; Packer, Samuel

    1984-01-01

    There is described an apparatus and method for diagnosing ocular cancer that is both non-invasive and accurate which comprises two radiation detectors positioned before each of the patient's eyes which will measure the radiation level produced in each eye after the administration of a tumor-localizing radiopharmaceutical such as gallium-67.

  6. Synthesis and use of (perfluoroaryl) fluoro-aluminate anion

    DOE Patents [OSTI]

    Marks, Tobin J. (Evanston, IL); Chen, You-Xian (Midland, MI)

    2001-01-01

    A trityl perfluorophenyl alumninate such as tris(2,2',2"-nonafluorobiphenyl)-fluoroaluminate (PBA.sup..crclbar.) and its role as a cocatalyst in metallocene-mediated olefin polymerization is disclosed. Gallium and indium analogs are also disclosed, as are analogs with different anyl groups or different numbers of flourine atoms thereon.

  7. Sinus histiocytosis with massive lymphadenopathy

    SciTech Connect (OSTI)

    Pastakia, B.; Weiss, S.H.

    1987-11-01

    Gallium uptake corresponding to the extent of the disease in a patient with histologically proven sinus histiocytosis with massive lymphadenopathy (SHML) is reported. Computerized tomography confirmed the presence of bilateral retrobulbar masses, involvement of both lateral recti, erosion of the bony orbital floor with encroachment of tumor into the right maxillary antrum, and retropharyngeal involvement.

  8. Material-dependent amorphization and epitaxial crystallization in ion-implanted AlAs/GaAs layer structures

    SciTech Connect (OSTI)

    Cullis, A.G.; Chew, N.G.; Whitehouse, C.R. ); Jacobson, D.C.; Poate, J.M.; Pearton, S.J.

    1989-09-18

    When AlAs/GaAs layer samples are subjected to Ar{sup +} ion bombardment at liquid-nitrogen temperature, it is shown that very different damage structures are produced in the two materials. While the GaAs is relatively easily amorphized, the AlAs is quite resistant to damage accumulation and remains crystalline for the ion doses employed in these investigations. Epitaxial regrowth of buried amorphous GaAs layers of thicknesses up to 150 nm can be induced by rapid thermal annealing. It is demonstrated that differences in the initial damage state have a strong influence upon the nature of lattice defects produced by annealing.

  9. Current-matched high-efficiency, multijunction monolithic solar cells

    DOE Patents [OSTI]

    Olson, Jerry M.; Kurtz, Sarah R.

    1993-01-01

    The efficiency of a two-junction (cascade) tandem photovoltaic device is improved by adjusting (decreasing) the top cell thickness to achieve current matching. An example of the invention was fabricated out of Ga.sub.0.52 In.sub.0.48 P and GaAs. Additional lattice-matched systems to which the invention pertains include Al.sub.x Ga.sub.1-x /GaAS (x= 0.3-0.4), GaAs/Ge and Ga.sub.y In.sub.l-y P/Ga.sub.y+0.5 In.sub.0.5-y As (0

  10. MANUSCRIPT PREPARATION TEMPLATE FOR THE 35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    BACK-CONTACTED AND SMALL FORM FACTOR GaAs SOLAR CELL Cruz-Campa, J. L. 1 ; Nielson, G. N. 1 ; Okandan, M. 1 ; Wanlass, M. W. 2 ; Sanchez, C. A. 1 ; Resnick. P. J. 1 ; Clews, P. J. 1 ; Pluym, T. 1 ; Gupta, V. P. 1 1 Sandia National Laboratories, Albuquerque, NM, USA 2 National Renewable Energy Laboratory, Golden, CO, USA ABSTRACT We present a newly developed microsystem enabled, back-contacted, shade-free GaAs solar cell. Using microsystem tools, we created sturdy 3 µm thick devices with lateral

  11. Absorption enhancement through Fabry-Prot resonant modes in a 430?nm thick InGaAs/GaAsP multiple quantum wells solar cell

    SciTech Connect (OSTI)

    Behaghel, B.; Tamaki, R.; Watanabe, K.; Sodabanlu, H.; Vandamme, N.; Dupuis, C.; Bardou, N.; Cattoni, A.; Okada, Y.; Sugiyama, M.; Collin, S.; Guillemoles, J.-F.

    2015-02-23

    We study light management in a 430?nm-thick GaAs p-i-n single junction solar cell with 10 pairs of InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the external quantum efficiency below GaAs bandgap by a factor of four through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 10% conversion efficiency. We demonstrate numerically that this promising result can be further improved by anti-reflection layers. This study paves the way to very thin MQWs solar cells.

  12. Strength of semiconductors, metals, and ceramics evaluated by a microscopic cleavage model with Morse-type and Lennard-Jones-type interaction

    SciTech Connect (OSTI)

    Hess, Peter

    2014-08-07

    An improved microscopic cleavage model, based on a Morse-type and Lennard-Jones-type interaction instead of the previously employed half-sine function, is used to determine the maximum cleavage strength for the brittle materials diamond, tungsten, molybdenum, silicon, GaAs, silica, and graphite. The results of both interaction potentials are in much better agreement with the theoretical strength values obtained by ab initio calculations for diamond, tungsten, molybdenum, and silicon than the previous model. Reasonable estimates of the intrinsic strength are presented for GaAs, silica, and graphite, where first principles values are not available.

  13. Phase coherent transport in hollow InAs nanowires

    SciTech Connect (OSTI)

    Wenz, T.; Rosien, M.; Haas, F.; Rieger, T.; Lepsa, M. I.; Lüth, H.; Grützmacher, D.; Schäpers, Th.; Demarina, N.

    2014-09-15

    Hollow InAs nanowires are produced from GaAs/InAs core/shell nanowires by wet chemical etching of the GaAs core. At room temperature, the resistivity of several nanowires is measured before and after removal of the GaAs core. The observed change in resistivity is explained by simulating the electronic states in both structures. At cryogenic temperatures, quantum transport in hollow InAs nanowires is studied. Flux periodic conductance oscillations are observed when the magnetic field is oriented parallel to the nanowire axis.

  14. Observation of the Kondo effect in a spin-3/2 hole quantum dot

    SciTech Connect (OSTI)

    Klochan, O.; Micolich, A. P.; Hamilton, A. R.; Trunov, K.; Reuter, D.; Wieck, A. D.

    2013-12-04

    We report the observation of the Kondo effect in a spin-3/2 hole quantum dot formed near pinch-off in a GaAs quantum wire. We clearly observe two distinctive hallmarks of quantum dot Kondo physics. First, the zero-bias peak in the differential conductance splits an in-plane magnetic field and the splitting is independent of gate voltage. Second, the splitting rate is twice as large as that for the lowest one-dimensional subband. We show that the Zeeman splitting of the zero-bias peak is highly anisotropic and attribute this to the strong spin-orbit interaction for holes in GaAs.

  15. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  16. Isoelectronic co-doping

    DOE Patents [OSTI]

    Mascarenhas, Angelo

    2004-11-09

    Isoelectronic co-doping of semiconductor compounds and alloys with deep acceptors and deep donors is used to decrease bandgap, to increase concentration of the dopant constituents in the resulting alloys, and to increase carrier mobilities lifetimes. Group III-V compounds and alloys, such as GaAs and GaP, are isoelectronically co-doped with, for example, N and Bi, to customize solar cells, thermal voltaic cells, light emitting diodes, photodetectors, and lasers on GaP, InP, GaAs, Ge, and Si substrates. Isoelectronically co-doped Group II-VI compounds and alloys are also included.

  17. Recovery Act : Near-Single-Crystalline Photovoltaic Thin Films on Polycrystalline, Flexible Substrates

    SciTech Connect (OSTI)

    Venkat Selvamanickam; Alex Freundlich

    2010-11-29

    III-V photovoltaics have exhibited efficiencies above 40%, but have found only a limited use because of the high cost of single crystal substrates. At the other end of the spectrum, polycrystalline and amorphous thin film solar cells offer the advantage of low-cost fabrication, but have not yielded high efficiencies. Our program is based on single-crystalline-like thin film photovoltaics on polycrystalline substrates using biaxially-textured templates made by Ion Beam-Assisted Deposition (IBAD). MgO templates made by IBAD on flexible metal substrate have been successfully used for epitaxial growth of germanium films. In spite of a 4.5% lattice mismatch, heteroepitaxial growth of Ge was achieved on CeO2 that was grown on IBAD MgO template. Room temperature optical bandgap of the Ge films was identified at 0.67 eV indicating minimal residual strain. Refraction index and extinction coefficient values of the Ge films were found to match well with that measured from a reference Ge single crystal. GaAs has been successfully grown epitaxially on Ge on metal substrate by molecular beam epitaxy. RHEED patterns indicate self annihilation of antiphase boundaries and the growth of a single domain GaAs. The GaAs is found to exhibit strong photoluminescence signal and, an existence of a relatively narrow (FWHM~20 meV) band-edge excitons measured in this film indicates a good optoelectronic quality of deposited GaAs. While excellent epitaxial growth has been achieved in GaAs on flexible metal substrates, the defect density of the films as measured by High Resolution X-ray Diffraction and etch pit experiments showed a high value of 5 * 10^8 per cm^2. Cross sectional transmission electron microscopy of the multilayer architecture showed concentration of threading dislocations near the germanium-ceria interface. The defect density was found decrease as the Ge films were made thicker. The defects appear to originate from the MgO layer presumably because of large lattice mismatches

  18. Sandia National Laboratories: Fact Sheets

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Fact Sheets Sensors Chemical Microsensors Chemiresistors Electrochemical Chemometrics Micromachined Combustible Gas Detector High Temperature Acoustic Wave Gas Sensors Hot Plate Based Technology and BTU Monitors Microfabricated BTU SAND Report Hydrogen Sensor Minature Ion Mobility Spectrometer Integrated SAWs Using GaAs Microcalibrator Chip Nano Electrode Arrays Nanoparticle Based Detection Microfabricated Btu Monitoring Device SAW Chemical Microsensor Arrays Smart SAND Physical Microsensors

  19. Deep-level transient spectroscopy of InAs/GaAs quantum dot superlattices

    SciTech Connect (OSTI)

    Sobolev, M. M.; Nevedomskii, V. N.; Zolotareva, R. V.; Vasil'ev, A. P.; Ustinov, V. M.

    2014-02-21

    Deep level transient spectroscopy (DLTS) has been applied to study the carrier emission from states of a 10-layer system of tunnel-coupled vertically correlated quantum dots (VCQDs) in p-n InAs/GaAs heterostructures with different widths of GaAs spacers under varied reverse bias (U{sub r}) and filling voltage pulse U{sub f}.

  20. Optically enhanced photon recycling in mechanically stacked multijunction solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Steiner, Myles A.; Geisz, John F.; Ward, J. Scott; Garcia, Ivan; Friedman, Daniel J.; King, Richard R.; Chiu, Philip T.; France, Ryan M.; Duda, Anna; Olavarria, Waldo J.; et al

    2015-11-09

    Multijunction solar cells can be fabricated by mechanically bonding together component cells that are grown separately. Here, we present four-junction four-terminal mechanical stacks composed of GaInP/GaAs tandems grown on GaAs substrates and GaInAsP/GaInAs tandems grown on InP substrates. The component cells were bonded together with a low-index transparent epoxy that acts as an angularly selective reflector to the GaAs bandedge luminescence, while simultaneously transmitting nearly all of the subbandgap light. As determined by electroluminescence measurements and optical modeling, the GaAs subcell demonstrates a higher internal radiative limit and, thus, higher subcell voltage, compared with GaAs subcells without the epoxy reflector.more » The best cells demonstrate 38.8 ± 1.0% efficiency under the global spectrum at 1000 W/m2 and ~ 42% under the direct spectrum at ~100 suns. As a result, eliminating the series resistance is the key challenge for further improving the concentrator cells.« less