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Sample records for ga tennessee tn

  1. THE UNIVERSITY Of TENNESSEE Health Science Center

    E-Print Network [OSTI]

    Cui, Yan

    THE UNIVERSITY Of TENNESSEE Health Science Center Human Resources 910 Madison Ave, Suite 722 Memphis, TN 38163 Tel: (901) 448-5600 Fax: (901) 448-5170 THE UNIVERSITY OF TENNESSEE HEALTH SCIENCE the Personnel Records of UT public domain. This gives any citizen of the State of Tennessee the right to view

  2. Michael Allen; Dongarra, Jack. [University of Tennessee, Knoxville...

    Office of Scientific and Technical Information (OSTI)

    Toward a new metric for ranking high performance computing systems. Heroux, Michael Allen; Dongarra, Jack. University of Tennessee, Knoxville, TN The High Performance Linpack...

  3. PV SOLAR RESOURCE GUIDE FOR RURAL DISTRIBUTORS IN TN Introduction

    E-Print Network [OSTI]

    McCarthy, John F.

    April 2013 Asa Roy PV SOLAR RESOURCE GUIDE FOR RURAL DISTRIBUTORS IN TN #12;1 Introduction experience with solar power. Research and interviews with the Tennessee's Green Power Providers Program, Green Power Providers Coordinators at several urban distributors, and solar installers in Tennessee

  4. Tennessee-based IAC Helps Manufacturer Become More Energy Efficient

    Office of Energy Efficiency and Renewable Energy (EERE)

    Thanks to help from the Tennessee 3-Star Industrial Assessment Center, the FUJIFILM Hunt Chemicals U.S.A facility in Dayton, TN is saving an estimated $39,280 per year in energy savings. Find out more.

  5. Lessons-Learned from D and D Activities at the Five Gaseous Diffusion Buildings (K-25, K- 27, K-29, K-31 and K-33) East Tennessee Technology Park, Oak Ridge, TN - 13574

    SciTech Connect (OSTI)

    Kopotic, James D. [United States Department of Energy, Oak Ridge Office, P.O. Box 2001, Oak Ridge, TN 37831 (United States)] [United States Department of Energy, Oak Ridge Office, P.O. Box 2001, Oak Ridge, TN 37831 (United States); Ferri, Mark S.; Buttram, Claude [URS - CH2M Oak Ridge LLC, East Tennessee Technology Park, P. O. Box 4699, Oak Ridge, TN 37831 (United States)] [URS - CH2M Oak Ridge LLC, East Tennessee Technology Park, P. O. Box 4699, Oak Ridge, TN 37831 (United States)

    2013-07-01

    The East Tennessee Technology Park (ETTP) is the site of five former gaseous diffusion plant (GDP) process buildings that were used to enrich uranium from 1945 to 1985. The process equipment in the original two buildings (K-25 and K-27) was used for the production of highly enriched uranium (HEU), while that in the three later buildings (K-29, K-31 and K-33) produced low enriched uranium (LEU). Equipment was contaminated primarily with uranium and to a lesser extent technetium (Tc). Decommissioning of the GDP process buildings has presented several unique challenges and produced many lessons-learned. Among these is the importance of good, up-front characterization in developing the best demolition approach. Also, chemical cleaning of process gas equipment and piping (PGE) prior to shutdown should be considered to minimize the amount of hold-up material that must be removed by demolition crews. Another lesson learned is to maintain shutdown buildings in a dry state to minimize structural degradation which can significantly complicate characterization, deactivation and demolition efforts. Perhaps the most important lesson learned is that decommissioning GDP process buildings is first and foremost a waste logistics challenge. Innovative solutions are required to effectively manage the sheer volume of waste generated from decontamination and demolition (D and D) of these enormous facilities. Finally, close coordination with Security is mandatory to effectively manage Special Nuclear Material (SNM) and classified equipment issues. (authors)

  6. Tennessee Air Quality Act (Tennessee)

    Broader source: Energy.gov [DOE]

    The Tennessee Air Quality Act (AQA) delegates the power to maintain air quality in the State to the Department of Environment and Conservation. Under the Department of the Environment and...

  7. The UNIVERSITY OF TENNESSEE Office of Risk Management

    E-Print Network [OSTI]

    Cui, Yan

    The UNIVERSITY OF TENNESSEE Office of Risk Management 112 Conference Center Building Knoxville, TN to the Office of Risk Management. NOTE: Please share this information within your department/unit with those with University and State requirements. It is imperative that the Office of Risk Management be notified

  8. Tennessee: Tennessee's Clean Energy Resources and Economy

    SciTech Connect (OSTI)

    2013-03-25

    This document highlights the Office of Energy Efficiency and Renewable Energy's investments and impacts in the state of Tennessee.

  9. TENNESSEE BUSINESS AND ECONOMIC OUTLOOK

    E-Print Network [OSTI]

    Grissino-Mayer, Henri D.

    TENNESSEE BUSINESS AND ECONOMIC OUTLOOK THE STATE'S ECONOMIC OUTLOOK SPRING 2015 #12;Matthew N Knoxville, Tennessee TENNESSEE BUSINESS AND ECONOMIC OUTLOOK THE STATE'S ECONOMIC OUTLOOK SPRING 2015 #12;ii | SPRING 2015 TENNESSEE BUSINESS AND ECONOMIC OUTLOOK The preparation of this report was financed in part

  10. Tennessee: Tennessee's Clean Energy Resources and Economy (Brochure)

    SciTech Connect (OSTI)

    Not Available

    2013-03-01

    This document highlights the Office of Energy Efficiency and Renewable Energy's investments and impacts in the state of Tennessee.

  11. * Middle Tennessee State University, Department of Physics and Astronomy, Murfreesboro, TN 37132 Vanderbilt University, Department of Chemistry, Nashville, TN 37235

    E-Print Network [OSTI]

    advantages over current silicon based solar cells. CdSe nanocrystals are facile and cost efficient to produce Current silicon based solar cells are limited, not due to advances in technology, but due to the physics of nanostructures to glass/ ITO substrate. Construct a device, test, and plot current-voltage data to find overall

  12. TN Energy Efficient Schools Initiative GSHP Program

    Broader source: Energy.gov [DOE]

    Project objectives: Develop methods to make GSHPs more affordable for Tennessee school districts, by innovative design techniques, reducing the up-front cost of the technology, and by providing an innovative method of financing construction. Three school districts have been chosen as test beds for the innovations.

  13. East Tennessee State University

    E-Print Network [OSTI]

    Karsai, Istvan

    site (www.etsu.edu/irb). Contact the IRB at 439-6053 with any questions. Reporting Unanticipated- tional Officials. ETSU and ETSU/VA Office for the Protection of Human Research Subjects PO Box 70565 Johnson City, TN 37614 Version 10/23/07 Phone: (423) 439-6053 Fax: (423)439-6060 Website: www.etsu

  14. Tennessee Nuclear Profile - Power Plants

    U.S. Energy Information Administration (EIA) Indexed Site

    Tennessee nuclear power plants, summer capacity and net generation, 2010" "Plant nametotal reactors","Summer capacity (mw)","Net generation (thousand mwh)","Share of State nuclear...

  15. CASL - Tennessee Valley Authority

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory of raregovAboutRecovery ActToolsForNorth Carolina State UniversityTennessee

  16. TEAM CUMBERLAND Tennessee Valley Authority 400 West Summit Hill Drive, Knoxville, TN 37902

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LIST OF APPLICABLEStatutory Authority SustainXSystem for39: Debian189 -September

  17. Retrofitting the Tennessee Valley Authority

    E-Print Network [OSTI]

    Zeiber, Kristen (Kristen Ann)

    2013-01-01

    As the flagship of the New Deal, the Tennessee Valley Authority (TVA) was a triumph of regional and environmental design that has since fallen on hard times. When writer James Agee toured the region in 1935, he described ...

  18. Invenergy TN LLC | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LIST OFAMERICA'SHeavyAgency (IRENA) Jump to: navigation, searchData atTN LLC Jump to:

  19. Work plan addendum for David Witherspoon, Inc., 901 Site Building Characterization, Knoxville, Tennessee

    SciTech Connect (OSTI)

    NONE

    1997-01-01

    This building characterization plan was developed as an addendum to the existing site characterization work plan documents, which are in Appendix B of the David Witherspoon, Inc., (DWI) preliminary remedial investigation (RI)/feasibility study (FS). All building characterization activities will be conducted in accordance with the rules of the Hazardous Substance Remedial Action Program under the direction of the Tennessee Department of Environment and Conservation, Division of Superfund (TN Rules 1200-1-3) and its implementing regulations. Additional rules of the state of Tennessee, Comprehensive Environmental Response, Compensation, and Liability Act of 1980, and the U.S. Environmental Protection Agency guidance were consulted during development of this plan. Activities at the DWI site were concerned with scrap metal processing and scrap metal resale.

  20. National Lab., TN (United States)] 54 ENVIRONMENTAL SCIENCES...

    Office of Scientific and Technical Information (OSTI)

    G.M. Oak Ridge National Lab., TN (United States) 54 ENVIRONMENTAL SCIENCES; GROUND WATER; REMEDIAL ACTION; TECHNETIUM 99; SORPTION; PERTECHNETATES Groundwater used for...

  1. The University of Tennessee Health Science Center

    E-Print Network [OSTI]

    Cui, Yan

    The University of Tennessee Health Science Center INSTRUCTIONS FOR TOTALLY DISABLED AND/OR SENIOR CITIZEN ENROLLING IN CREDIT COURSES In accordance with provisions of Tennessee Code Annotated, Section 49 to The University of Tennessee Health Science Center. You must make application for admission to the University

  2. DOE - Office of Legacy Management -- Oak Ridge TN Warehouse Site - TN 09

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth Dakota Edgemont,Manufacturing -Nevada Test SiteNYOak Ridge TN

  3. Middle Tennessee EMC- Residential Energy Efficiency Rebate Program

    Broader source: Energy.gov [DOE]

    Middle Tennessee Electric Membership Corporation (MTEMC) and the Tennessee Valley Authority (TVA) offer incentives for residential customers through the In-Home Energy Evaluation Program. This...

  4. Tennessee: Oak Ridge National Laboratory Optimizes Carbon Fiber...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Tennessee: Oak Ridge National Laboratory Optimizes Carbon Fiber Production, Reduces Carbon Fiber Costs by 30% Tennessee: Oak Ridge National Laboratory Optimizes Carbon Fiber...

  5. CX: Categorical Determination-Alcoa Tennessee Automotive Sheet...

    Office of Environmental Management (EM)

    CX: Categorical Determination-Alcoa Tennessee Automotive Sheet Expansion Project CX: Categorical Determination-Alcoa Tennessee Automotive Sheet Expansion Project Categorical...

  6. Solar Field Gives Tennessee Economy a Boost | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Efficient Energy of Tennessee installs panels at a 1-MW solar farm outside Knoxville in July. | Photo by Harvey Abouelata and courtesy of Efficient Energy of Tennessee Efficient...

  7. East Tennessee Technology Park 3-1 3. East Tennessee Technology Park

    E-Print Network [OSTI]

    Pennycook, Steve

    1 East Tennessee Technology Park 3-1 3. East Tennessee Technology Park ETTP was originally built to the "East Tennessee Technology Park." Environmental management and remediation operations consist by the private sector) also became a major mission at ETTP. Reindustrialization allows private industry to lease

  8. Green Energy Property Tax Assessment (Tennessee) | Department...

    Broader source: Energy.gov (indexed) [DOE]

    the Treasury Tennessee offers a special ad valorem property tax assessment for certified green energy production facilities. Property that generates electricity from a certified...

  9. Where Tennessee Abstinence Education Fails to Protect

    E-Print Network [OSTI]

    Andrews, Kelley Rebecca

    2015-01-01

    Sex  education,  particularly  where  federal  funding  is  abstinence  only  sex  education  to   prohibit  the  Tennessee  Abstinence  Education  Fails  to  Protect   By  

  10. ,"Tennessee Natural Gas LNG Storage Additions (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Tennessee Natural Gas LNG Storage Additions (MMcf)",1,"Annual",2014 ,"Release Date:","9302015" ,"Next Release...

  11. ,"Tennessee Natural Gas LNG Storage Withdrawals (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Tennessee Natural Gas LNG Storage Withdrawals (MMcf)",1,"Annual",2014 ,"Release Date:","9302015" ,"Next Release...

  12. ,"Tennessee Natural Gas Gross Withdrawals and Production"

    U.S. Energy Information Administration (EIA) Indexed Site

    Name","Description"," Of Series","Frequency","Latest Data for" ,"Data 1","Tennessee Natural Gas Gross Withdrawals and Production",10,"Annual",2014,"06301967" ,"Release...

  13. Tennessee's Manufacturing Sector Before and After the

    E-Print Network [OSTI]

    Grissino-Mayer, Henri D.

    Tennessee's Manufacturing Sector Before and After the Great Recession Prepared by Matthew N. Murray....................................................................................................................................... 1 Manufacturing in the Post Great Recession Era............................................................................... 2 Manufacturing Employment Trends

  14. East Tennessee State University Web Privacy Statement

    E-Print Network [OSTI]

    Karsai, Istvan

    East Tennessee State University Web Privacy Statement A Note to Children and Parents East Tennessee through a university Web site is handled. ETSU understands the importance of protecting the privacy of personal information, especially in today's electronic environment. This privacy policy covers the Web

  15. Underground Coal Gasification at Tennessee Colony 

    E-Print Network [OSTI]

    Garrard, C. W.

    1979-01-01

    The Tennessee Colony In Situ Coal Gasification Project conducted by Basic Resources Inc. is the most recent step in Texas Utilities Company's ongoing research into the utilization of Texas lignite. The project, an application of the Soviet...

  16. University of Tennessee School of Music

    E-Print Network [OSTI]

    Grissino-Mayer, Henri D.

    University of Tennessee School of Music Ambassador Application Return your completed application to the School of Music Office. Please Read the Information Below before Applying: The School of Music Student Ambassadors

  17. Tennessee

    Gasoline and Diesel Fuel Update (EIA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustments (Billion Cubic Feet) Wyoming963 1.969 1.979 1.988Prices, SalesMoroccoTurkey

  18. NNSA hosts New Mexico, Tennessee governors | National Nuclear...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New Mexico, Tennessee governors | National Nuclear Security Administration Facebook Twitter Youtube Flickr RSS People Mission Managing the Stockpile Preventing Proliferation...

  19. Transposable elements Updated March 29, 2012 4 (none) Tpm kan (Tn903) Tn903 pkan none none --K CDE Epicentre

    E-Print Network [OSTI]

    Borenstein, Elhanan

    - - L2 CDI [6] T14 mTn5*-lacZ1 -em pLG51 Tpm (P) erm ? lacZ TS none - - L2 CDI [6] T15 ISR6K-em 7 pLG52a, pLG53, pLG55a Tpm (P) erm ? none none - ori R6K E ACE [6] T16 ISR6K-kan 8 pLG56a Tpm (P) kan ? none

  20. EA-1175: Proposed Title Transfer of East Tennessee Technology Park Land and Facilities, Oak Ridge, Tennessee

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts for the proposal to transfer the title of unneeded DOE real property located at the U.S. Department of Energy East Tennessee Technology Park (ETTP) in...

  1. BIOMECHANICS THE UNIVERSITY OF TENNESSEE FALL 2013

    E-Print Network [OSTI]

    Auerbach, Benjamin M.

    1 BIOMECHANICS ANTH 595 THE UNIVERSITY OF TENNESSEE ­ FALL 2013 Instructor: Benjamin M. Auerbach to bblearn.utk.edu for announcements and to access the course readings. Course Description Biomechanics is the study of functional morphology. Broadly, in biomechanical studies, we examine the activities

  2. Knoxville, Tennessee: Solar in Action (Brochure)

    SciTech Connect (OSTI)

    Not Available

    2011-10-01

    This brochure provides an overview of the challenges and successes of Knoxville, TN, a 2008 Solar America City awardee, on the path toward becoming a solar-powered community. Accomplishments, case studies, key lessons learned, and local resource information are given.

  3. Energy Secretary to Visit Georgia Nuclear Reactor Site and Tennessee...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    to Visit Georgia Nuclear Reactor Site and Tennessee Laboratory to Highlight Administration Support for Nuclear Energy Energy Secretary to Visit Georgia Nuclear Reactor Site and...

  4. ,"Tennessee Natural Gas Gross Withdrawals from Shale Gas (Million...

    U.S. Energy Information Administration (EIA) Indexed Site

    Shale Gas (Million Cubic Feet)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description"," Of Series","Frequency","Latest Data for" ,"Data 1","Tennessee...

  5. ,"Tennessee Natural Gas Vehicle Fuel Price (Dollars per Thousand...

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Tennessee Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet)",1,"Annual",2012 ,"Release...

  6. Technical Note PR-TN-2004/00370 Issued: 05/2004

    E-Print Network [OSTI]

    de Vries, Arjen P.

    Technical Note PR-TN-2004/00370 Issued: 05/2004 Mass Customization in Ambient Narratives Mark van Science Amsterdam Unclassified Koninklijke Philips Electronics N.V. 2004 #12;PR-TN-2004/00370 Unclassified ii Koninklijke Philips Electronics N.V. 2004 Authors' address Mark van Doorn WY 21 mark

  7. A review of the T_N theory and its cousins

    E-Print Network [OSTI]

    Yuji Tachikawa

    2015-04-07

    The T_N theory is a four-dimensional N=2 superconformal field theory that has played a central role in the analysis of supersymmetric dualities in the last few years. The aim of this review is to collect known properties of the T_N theory and its cousins in one place as a quick reference.

  8. A review of the T_N theory and its cousins

    E-Print Network [OSTI]

    Tachikawa, Yuji

    2015-01-01

    The T_N theory is a four-dimensional N=2 superconformal field theory that has played a central role in the analysis of supersymmetric dualities in the last few years. The aim of this review is to collect known properties of the T_N theory and its cousins in one place as a quick reference.

  9. Harriman, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynnMassachusetts: EnergySoftware IncHarmon,Tennessee: Energy Resources

  10. Harrison, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynnMassachusetts: EnergySoftwareMississippi: EnergyHarrisonNewTennessee:

  11. April, 1999 (Revised) 1 TENNESSEE DEPARTMENT OF AGRICULTURE

    E-Print Network [OSTI]

    Grissino-Mayer, Henri D.

    in Retail Markets which are not Produced and Marketed Under the Tennessee Fancy Fresh Egg Marketing ProgramApril, 1999 (Revised) 1 RULES OF TENNESSEE DEPARTMENT OF AGRICULTURE DIVISION OF MARKETS CHAPTER 0080-5-4-.12 Eggs Offered for Sale at Retail 0080-5-4-.02 Inedible Eggs 0080-5-4-.13 Out

  12. Tennessee Water Resources Research Center Annual Technical Report

    E-Print Network [OSTI]

    communities across the state. In recent years, many of the small municipal water suppliers and utility become severely strained, forcing users to seek alternative sources of water. Providing an adequate of Tennessee depends on groundwater for drinking water supply. In West Tennessee, nearly all public suppliers

  13. Tennessee Water Resources Research Center Annual Technical Report

    E-Print Network [OSTI]

    supplies of many communities across the state. In recent years, many of the small municipal water suppliers wells have become severely strained, forcing users to seek alternative sources of water. Providing of Tennessee depends on groundwater for drinking water supply. In West Tennessee, nearly all public suppliers

  14. Deputy Secretary Poneman Attends Ground Breaking at Tennessee...

    Broader source: Energy.gov (indexed) [DOE]

    Addthis Related Articles WEDNESDAY: Deputy Secretary Poneman to Speak at Nissan Advanced Battery Manufacturing Facility Groundbreaking in Smyrna, TN Secretary Chu Announces...

  15. State of Tennessee Home Energy Savers' Program

    SciTech Connect (OSTI)

    Not Available

    1980-07-21

    The activities of the original Home Energy Savers' Program (HESP) in Tennessee are briefly described. Then the approach, summary, and evaluation of HESP programs, Project Conserve, Manpower Assistance program, and the Information Center are detailed. The HESP Interim Report, May 23, 1977, is included. It deals with the background information on the project; examines the methods, assumptions, and adjustments made during implementation of the program; gives evaluations of program tasks and performance; and details a proposed project extension for June 1977 to March 1978. A survey on Project Conserve is presented. (MCW)

  16. Fairmount, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, AlabamaETEC GmbH JumpEllenville,PowerEvaporative||New Jersey:Public UtilitiesTennessee:

  17. Kentucky Utilities Co (Tennessee) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EAInvervar Hydro JumpHuariKeewatin Public UtilitiesTennessee) Jump to:

  18. Tennessee Valley Electric Coop | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc JumpHeter BatterySolarfinMarketMemberI PLLCsourceValley AuthorityTennessee

  19. Tennessee Valley Authority (Alabama) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EISTJ Automation JumpSet RenewableFuelStandard Jump to:usingTennessee

  20. Chattanooga, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIR JumpMaine: Energy ResourcesTennessee: Energy Resources Jump to:

  1. Chattanooga, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIR JumpMaine: Energy ResourcesTennessee: Energy Resources Jump

  2. Murfreesboro, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsourceII Jump to: navigation, searchsourceEnergy InformationMunicipalitiesTennessee:

  3. Tennessee Valley Shorebird Assessment Project SHOREBIRD CONSERVATION AND MONITORING

    E-Print Network [OSTI]

    Gray, Matthew

    IN 1 YEAR BAR-TAILED GODWIT 6,000 MILES NON-STOP Tennessee Valley Shorebird Assessment Project NICHE Assessment Project Overview Construction of TVA dams over the past 60+ years has created extensive inland

  4. GATTON COLLEGE OF PHARMACY EAST TENNESSEE STATE UNIVERSITY

    E-Print Network [OSTI]

    Karsai, Istvan

    Accreditation 11 Memberships 11 ETSU Vision Statement 11 ETSU Mission Statement 11 ETSU Values 11 ETSU Strategic........................................................................................ 63 Tennessee Board of Regents 63 ETSU Administration 64 College of Pharmacy Administration 64 FACULTY

  5. Tennessee Technological University 1 A Revolution That Will Transform How

    E-Print Network [OSTI]

    Qiu, Robert Caiming

    Technological University 9 #12;Correlation Walmart example Database of past transactions What item each As storms approached, Walmart stocked boxes of Pop-Tarts at the front of stores Tennessee Technological

  6. Integrated solid waste management of Sevierville, Tennessee

    SciTech Connect (OSTI)

    1995-11-01

    The subject document reports the results of an in-depth investigation of the fiscal year 1992 cost of the City of Sevierville, Tennessee integrated municipal solid waste management (IMSWM) system, the energy consumed to operate the system, and the environmental performance requirements for each of the system`s waste-processing and disposal facilities. Actual data from records kept by participants is reported in this document. Every effort was made to minimize the use of assumptions, and no attempt is made to interpret the data reported. Analytical approaches are documented so that interested analysts may perform manipulation or further analysis of the data. As such, the report is a reference document for MSW management professionals who are interested in the actual costs and energy consumption for a one-year period, of an operating IMSWM systems.

  7. INDEPENDENT VERIFICATION SURVEY REPORT FOR ZONE 1 OF THE EAST TENNESSEE TECHNOLOGY PARK IN OAK RIDGE, TENNESSEE

    SciTech Connect (OSTI)

    King, David A.

    2012-08-16

    Oak Ridge Associated Universities (ORAU) conducted in-process inspections and independent verification (IV) surveys in support of DOE's remedial efforts in Zone 1 of East Tennessee Technology Park (ETTP) in Oak Ridge, Tennessee. Inspections concluded that the remediation contractor's soil removal and survey objectives were satisfied and the dynamic verification strategy (DVS) was implemented as designed. Independent verification (IV) activities included gamma walkover surveys and soil sample collection/analysis over multiple exposure units (EUs).

  8. Tennessee: Da Vinci Fuel-in-Oil Reduces Emissions, Wins R&D 100...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Tennessee: Da Vinci Fuel-in-Oil Reduces Emissions, Wins R&D 100 Award Tennessee: Da Vinci Fuel-in-Oil Reduces Emissions, Wins R&D 100 Award August 19, 2013 - 5:07pm Addthis...

  9. Recommendation 170: Remedial Investigation/Feasibility Study for East Tennessee Technology Park

    Broader source: Energy.gov [DOE]

    The ORSSAB Recommendation to DOE on a Remedial Investigation/Feasibility Study for East Tennessee Technology Park.

  10. Independent Oversight Inspection, East Tennessee Technology Park, Summary Report- May 2003

    Broader source: Energy.gov [DOE]

    Inspection of Environment, Safety, and Health and Emergency Management at the Oak Ridge Operations Office and East Tennessee Technology Park

  11. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  12. ERDC/TN APCRP-EA-24 Comparison of Three Biomass Sampling

    E-Print Network [OSTI]

    US Army Corps of Engineers

    ERDC/TN APCRP-EA-24 July 2010 Comparison of Three Biomass Sampling Techniques on Submersed Aquatic R. Spickard2 PURPOSE: Quantifying biomass to measure aquatic plant abundance can be costly and labor intensive. This technical note compares several alternate, less exhaustive techniques for biomass sampling

  13. ERDC/EL TN-11-1 Flood Risk Management: Insights from

    E-Print Network [OSTI]

    US Army Corps of Engineers

    ERDC/EL TN-11-1 March 2011 Flood Risk Management: Insights from an Expert Modeling Process by M. D preparedness planning that harmonizes efforts of implementing agencies and stakeholders. Risk management are essential for effective risk management policy. Formal (versus ad hoc) analyses of risk manager and stake

  14. EA-1514: Proposed Conveyance of Parcel ED-6 to the City of Oak Ridge, TN

    Broader source: Energy.gov [DOE]

    This Environmental Assessment was prepared for the conveyance of approximately 336 acres of excess property (i.e., property not needed to fulfill DOE current or foreseeable future requirements) known as Parcel ED-6 to the city of Oak Ridge, TN.

  15. Transition Plan for the K-1203 Sewage Treatment Plant, East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Hoffmeister J.

    2008-10-05

    The K-1203 Sewage Treatment Plant (STP) was previously used to treat and process all sanitary sewage waste from the East Tennessee Technology Park (ETTP). The plant was shut down on May 29, 2008 as a result of the transition of sewage treatment for ETTP to the City of Oak Ridge. The City of Oak Ridge expanded the Rarity Ridge Sewage Treatment Plant (RRSTP) to include capacity to treat the waste from the ETTP and the Community Reuse Organization of East Tennessee (CROET) constructed a new ETTP lift station and force main to RRSTP. In preparation for the shutdown of K-1203, the US Department of Energy (DOE) in conjunction with Operation Management International (OMI) developed a shut down plan to outline actions that need to occur prior to the transition of the facility to Bechtel Jacob Company, LLC (BJC) for decontamination and demolition (D and D). This plan outlines the actions, roles, and responsibilities for BJC in order to support the transition of the K-1203 STP from OMI to the BJC Surveillance and Maintenance (S and M) and D and D programs. The D and D of the K-1203 Facilities is planned under the Comprehensive Environmental Response, Compensation, and Liability Act Remaining Facilities D and D Action Memorandum in the Balance of Site-Utilities D and D Subproject in fiscal year (FY) 2014.

  16. Tennessee Valley and Eastern Kentucky Wind Working Group

    SciTech Connect (OSTI)

    Katie Stokes

    2012-05-03

    In December 2009, the Southern Alliance for Clean Energy (SACE), through a partnership with the Appalachian Regional Commission, EKPC, Kentucky's Department for Energy Development and Independence, SACE, Tennessee's Department of Environment and Conservation, and TVA, and through a contract with the Department of Energy, established the Tennessee Valley and Eastern Kentucky Wind Working Group (TVEKWWG). TVEKWWG consists of a strong network of people and organizations. Working together, they provide information to various organizations and stakeholders regarding the responsible development of wind power in the state. Members include representatives from utility interests, state and federal agencies, economic development organizations, non-government organizations, local decision makers, educational institutions, and wind industry representatives. The working group is facilitated by the Southern Alliance for Clean Energy. TVEKWWG supports the Department of Energy by helping educate and inform key stakeholders about wind energy in the state of Tennessee.

  17. East Tennessee State University (ETSU) eJobs at ETSU

    E-Print Network [OSTI]

    Karsai, Istvan

    East Tennessee State University (ETSU) eJobs at ETSU Frequently Asked Questions Q.) How do I obtain an ETSU application for employment? A.) Apply for a regular budgeted position at ETSU using the eJobs at ETSU online system. Please visit the ETSU employment opportunities website for instructions at: http://www.etsu

  18. The Tennessee Board of Regents Institutional Student Housing Policies

    E-Print Network [OSTI]

    Dasgupta, Dipankar

    The Tennessee Board of Regents Institutional Student Housing Policies For The University of Memphis) graduate semester hours by the close of the registration period for which housing is requested. Summer. Students not enrolled in classes during the summer, but need summer housing, may request an exception

  19. Tennessee Water Resources Research Center Annual Technical Report

    E-Print Network [OSTI]

    the state. In recent years, many of the small municipal water suppliers and utility districts that rely strained, forcing users to seek alternative sources of water. Providing an adequate supply of water on groundwater for drinking water supply. In West Tennessee, nearly all public suppliers, industries, and rural

  20. Tennessee Water Resources Research Center Annual Technical Report

    E-Print Network [OSTI]

    , many of the small municipal water suppliers and utility districts that rely on wells, springs, or minor alternative sources of water. Providing an adequate supply of water for industrial, commercial, and domestic supply. In West Tennessee, nearly all public suppliers, industries, and rural residents use groundwater

  1. Tennessee Water Resources Research Center Annual Technical Report

    E-Print Network [OSTI]

    suppliers and utility districts that rely on wells, springs, or minor tributaries for their water sources, and commercial use wells have become severely strained, forcing users to seek alternative sources of water Tennessee, nearly all public suppliers, industries, and rural residents use groundwater. However, not enough

  2. 2301 Vanderbilt Place Nashville, Tennessee 37240-7741

    E-Print Network [OSTI]

    Palmeri, Thomas

    pmb 407741 2301 Vanderbilt Place Nashville, Tennessee 37240-7741 toll free 866.388.4723 tel 615 address by the Nichols-Chancellor's medalist at 11 a.m. followed by Faculty Seminars. The week culminates in the Commencement ceremony on Friday, May 8, beginning at 9:00 a.m. Most Commencement events conclude by 1:30 Friday

  3. Department of Geography The University of Tennessee, Knoxville

    E-Print Network [OSTI]

    Wang, Xiaorui "Ray"

    1 Department of Geography The University of Tennessee, Knoxville STRATEGIC PLAN Revised April 2010 Geography Department is one of the most productive among Ph.D.-granting departments in North America --The 2004 Program Review Committee 1. MISSION & VISION The mission of the Department of Geography

  4. EA-2000: Proposed Land Transfer to Develop a General Aviation Airport at the East Tennessee Technology Park Heritage Center, Oak Ridge, Tennessee

    Broader source: Energy.gov [DOE]

    DOE is preparing an EA to assess potential environmental impacts of the proposed land transfer to the Metropolitan Knoxville Airport Authority for the development of a general aviation airport at the East Tennessee Technology Park Heritage Center, in Oak Ridge, Tennessee.

  5. Addendum to the East Tennessee Technology Park Site-Wide Residual Contamination Remedial Investigation Work Plan Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    SAIC

    2011-04-01

    The East Tennessee Technology Park Site-Wide Residual Contamination Remedial Investigation Work Plan (DOE 2004) describes the planned fieldwork to support the remedial investigation (RI) for residual contamination at the East Tennessee Technology Park (ETTP) not addressed in previous Comprehensive Environmental Response, Compensation, and Liability Act of 1980 (CERCLA) decisions. This Addendum describes activities that will be conducted to gather additional information in Zone 1 of the ETTP for groundwater, surface water, and sediments. This Addendum has been developed from agreements reached in meetings held on June 23, 2010, August 25, 2010, October 13, 2010, November 13, 2010, December 1, 2010, and January 13, 2011, with representatives of the U. S. Department of Energy (DOE), U. S. Environmental Protection Agency (EPA), and Tennessee Department of Environment and Conservation (TDEC). Based on historical to recent groundwater data for ETTP and the previously completed Sitewide Remedial Investigation for the ETTP (DOE 2007a), the following six areas of concern have been identified that exhibit groundwater contamination downgradient of these areas above state of Tennessee and EPA drinking water maximum contaminant levels (MCLs): (1) K-720 Fly Ash Pile, (2) K-770 Scrap Yard, (3) Duct Island, (4) K-1085 Firehouse Burn/J.A. Jones Maintenance Area, (5) Contractor's Spoil Area (CSA), and (6) Former K-1070-A Burial Ground. The paper presents a brief summary of the history of the areas, the general conceptual models for the observed groundwater contamination, and the data gaps identified.

  6. Deep Residential Retrofits in East Tennessee

    SciTech Connect (OSTI)

    Boudreaux, Philip R; Hendrick, Timothy P; Christian, Jeffrey E; Jackson, Roderick K

    2012-04-01

    Executive Summary Oak Ridge National Laboratory (ORNL) is furthering residential energy retrofit research in the mixed-humid climate of East Tennessee by selecting 10 homes and guiding the homeowners in the energy retrofit process. The homeowners pay for the retrofits, and ORNL advises which retrofits to complete and collects post-retrofit data. This effort is in accordance with the Department of Energy s Building America program research goal of demonstrating market-ready energy retrofit packages that reduce home energy use by 30 50%. Through this research, ORNL researchers hope to understand why homeowners decide to partake in energy retrofits, the payback of home energy retrofits, and which retrofit packages most economically reduce energy use. Homeowner interviews help the researchers understand the homeowners experience. Information gathered during the interviews will aid in extending market penetration of home energy retrofits by helping researchers and the retrofit industry understand what drives homeowners in making positive decisions regarding these retrofits. This report summarizes the selection process, the pre-retrofit condition, the recommended retrofits, the actual cost of the retrofits (when available), and an estimated energy savings of the retrofit package using EnergyGauge . Of the 10 households selected to participate in the study, only five completed the recommended retrofits, three completed at least one but no more than three of the recommended retrofits, and two households did not complete any of the recommended retrofits. In the case of the two homes that did none of the recommended work, the pre-retrofit condition of the homes and the recommended retrofits are reported. The five homes that completed the recommended retrofits are monitored for energy consumption of the whole house, appliances, space conditioning equipment, water heater, and most of the other circuits with miscellaneous electric loads (MELs) and lighting. Thermal comfort is also monitored, with temperature and humidity measured in all conditioned zones, attics, crawlspaces, and unconditioned basements. In some homes, heat flux transducers are installed on the basement walls to help determine the insulating qualities of the technologies and practices. EnergyGauge is used to estimate the pre-retrofit and post-retrofit home energy rating system (HERS) index and reduction in energy consumption and energy bill. In a follow-up report, data from the installed sensors will be presented and analyzed as well as a comparison of the post-retrofit energy consumption of the home to the EnergyGauge model of the post-retrofit home. Table ES1 shows the retrofits that were completed at the eight households where some or all of the recommended retrofits were completed. Home aliases are used to keep the homeowners anonymous. Some key findings of this study thus far are listed as follows. Some homeowners (50%) are not willing to spend the money to reach 30 50% energy savings. Quality of retrofit work is significantly variable among contractors which impact the potential energy savings of the retrofit. Challenges exist in defining house volume and floor area. Of the five homes that completed all the recommended retrofits, energy bill savings was not the main driver for energy retrofits. In no case were the retrofits cost neutral given a 15 year loan at 7% interest for the retrofit costs.

  7. Wayne County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEt Al.,Turin,VillageWarrensourceCentre JumpTennessee: Energy Resources Jump

  8. Weakley County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEt Al.,Turin,VillageWarrensourceCentreCounty, Tennessee: Energy Resources

  9. Warren County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEt Al.,Turin,Village ofWaialua,Wallington,SolarMissouri:Tennessee: Energy

  10. Solar heating system installed at Jackson, Tennessee. Final report

    SciTech Connect (OSTI)

    1980-10-01

    The solar energy heating system installed at the Coca-Cola Bottling Works in Jackson, Tennessee is described. The system consists of 9480 square feet of Owens-Illinois evacuated tubular solar collectors with attached specular cylindrical reflectors and will provide space heating for the 70,000 square foot production building in the winter, and hot water for the bottle washing equipment the remainder of the year. Component specifications and engineering drawings are included. (WHK)

  11. EIS-0152: Iroquois/Tennessee Phase I Pipeline Project

    Broader source: Energy.gov [DOE]

    The Federal Energy Regulatory Commission prepared this statement to asses the environmental impacts of constructing and operating an interstate natural gas pipeline and associated infrastructure to transport gas from Canada and domestic sources to the New England Market, as proposed by the Iroquois Gas Transmission System and the Tennessee Gas Pipeline Company. The U.S. Department of Energy Office of Fossil Energy was a cooperating agency during statement development and adopted the statement on 9/1/1990.

  12. 2301 Vanderbilt Place Nashville, Tennessee 37240-7741

    E-Print Network [OSTI]

    Palmeri, Thomas

    pmb 407741 2301 Vanderbilt Place Nashville, Tennessee 37240-7741 toll free 866.388.4723 tel 615-Chancellor's medalist at 11 a.m. followed by Faculty Seminars for families and guests of graduates. The week culminates in the Commencement ceremony on Friday, May 8, beginning at 9:00 a.m. with the graduate schools dismissed at 10:15 a.m

  13. Hamblen County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County,SolarFERCInformationVirginia:Hamblen County, Tennessee:

  14. Henry County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas: Energy Resources Jump to: navigation,NavigationIndiana: EnergyTennessee: Energy

  15. Hickman County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas: Energy Resources Jump to:Hershey, Pennsylvania: EnergyGtelTennessee: Energy

  16. Rutherford County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/ColoradoRemsenburg-Speonk, NewMichigan:Roxbury,Rush County,New York:Tennessee: Energy

  17. Sevier County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing Capacity for Low Emission DevelopmentLakes, NorthTennessee: Energy Resources

  18. Signal Mountain, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing Capacity for LowInformationShoshoneEnergyMountain, Tennessee: Energy

  19. Loudon County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas:Montezuma, Arizona:Oregon: EnergyLloyd,Loudon County, Tennessee: Energy Resources

  20. Marshall County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas:Montezuma,InformationIllinois: EnergyWisconsin: EnergyMinnesota:Tennessee: Energy

  1. Lincoln County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas:Montezuma, Arizona:Oregon: Energy Resources Jump to: navigation, searchTennessee:

  2. Polk County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPIProtectio1975) |Texas: Energy ResourcesArkansas: EnergyNebraska:Tennessee:

  3. Perry County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPIProtectio ProgramInformationMissouri: Energy Resources JumpTennessee:

  4. Tennessee: Bringing Jobs and Economic Development to Piney Flats |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative FuelsofProgram: Report15 MeetingDevelopmentDepartment of Energy Tennessee:

  5. Alternative Fuels Data Center: Idle Reduction Programs at Tennessee Schools

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative Fuels Data Center Home Page on Digg FindPortsasIdle Reduction Programs at Tennessee

  6. On the origin of a phosphate enriched interval in the Chattanooga Shale (Upper Devonian) of Tennessee--A combined sedimentologic,

    E-Print Network [OSTI]

    Schieber, Juergen

    ) of Tennessee--A combined sedimentologic, petrographic, and geochemical study Yifan Li a,b, , Juergen Schieber b

  7. Y-12 and East TN Public Broadcasting System Â… A Nuclear Family Video Miniseries

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLos Alamos verifies largest single MicropulseXunOperationsEast TN

  8. The East Tennessee Technology Park Progress Report for the Tennessee Hazardous Waste Reduction Act for Calendar Year 1999

    SciTech Connect (OSTI)

    Bechtel Jacobs Company LLC

    2000-03-01

    This report is prepared for the East Tennessee Technology Park (formerly the Oak Ridge K-25 Site) (ETTP) in compliance with the ''Tennessee Hazardous Waste Reduction Act of 1990'' (THWRA) (TDEC 1990), Tennessee Code Annotated 68-212-306. Annually, THWRA requires a review of the site waste reduction plan, completion of summary waste reduction information as part of the site's annual hazardous waste reporting, and completion of an annual progress report analyzing and quantifying progress toward THWRA-required waste stream-specific reduction goals. This THWRA-required progress report provides information about ETTP's hazardous waste streams regulated under THWRA and waste reduction progress made in calendar year (CY) 1999. This progress report also documents the annual review of the site plan, ''Oak Ridge Operations Environmental Management and Enrichment Facilities (EMEF) Pollution Prevention Program Plan'', BJC/OR-306/R1 (Bechtel Jacobs Company 199a). In 1996, ETTP established new goal year ratios that extended the goal year to CY 1999 and targeted 50 percent waste stream-specific reduction goals. In CY 1999, these CY 1999 goals were extended to CY 2000 for all waste streams that generated waste in 1999. Of the 70 ETTP RCRA waste streams tracked in this report from base years as early as CY 1991, 51 waste streams met or exceeded their reduction goal based on the CY 1999 data.

  9. SCIENTIFIC NOTE Phloeoxena signata (Dejean): Northern range extensions to Maryland and Tennessee, U.S.A.,

    E-Print Network [OSTI]

    Miller, Scott

    the Tennessee River; same data except ``3 Km SE Childers Hill at Leigh Creek, 25 March 2002, R. Ward'' (1 and accompanying notes are as follows: ``Tennessee: Hamilton County, Harrison State Park, 19 March 2003, R. D. Ward, 5 Km W Southside, Chambers Creek, 30 Oct. 2004, R. Ward'' (1), forested bottom lands, inland from

  10. CAD data exchange with Martin Marietta Energy Systems, Inc., Oak Ridge, TN

    SciTech Connect (OSTI)

    Smith, K.L.

    1994-10-01

    This document has been developed to provide guidance in the interchange of electronic CAD data with Martin Marietta Energy Systems, Inc., Oak Ridge, Tennessee. It is not meant to be as comprehensive as the existing standards and specifications, but to provide a minimum set of practices that will enhance the success of the CAD data exchange. It is now a Department of Energy (DOE) Oak Ridge Field Office requirement that Architect-Engineering (A-E) firms prepare all new drawings using a Computer Aided Design (CAD) system that is compatible with the Facility Manager`s (FM) CAD system. For Oak Ridge facilities, the CAD system used for facility design by the FM, Martin Marietta Energy Systems, Inc., is Intregraph. The format for interchange of CAD data for Oak Ridge facilities will be the Intergraph MicroStation/IGDS format.

  11. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  12. Wilson County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia:Illinois: Energy Resources JumpWillowick,7.5808413°,Tennessee:

  13. Van Buren County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEt Al.,Turin, NewArkansas: Energy Resources Jump to: navigation,Tennessee:

  14. Tipton County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEt Al., 2013)Open EnergyTinox Jump to: navigation, searchTippingTennessee:

  15. DOE - Office of Legacy Management -- Tennessee Valley Authority - AL 01

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and Myers Co - OHStar CutterTennessee Valley

  16. Grundy County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County,Solar JumpInformationGrowind Jump to:Tennessee: Energy

  17. Franklin County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainable Urban TransportFortistar LLC Jumpwells,Maine: EnergyNew York:Tennessee:

  18. DeKalb County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (UtilityInstruments Inc JumpIowa:Minnesota:DaylightingDeFreesTennessee: Energy

  19. East Ridge, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, AlabamaETEC GmbH Jump to:Providence, Rhode Island: Energy Resources JumpTennessee:

  20. Smith County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing Capacity forSilicium de ProvenceSolar JumpSloan,Smart GridTennessee: Energy

  1. Middle Valley, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland: Energy ResourcesDec 2005 WindPRO isMickeyWest Energy JumpValley, Tennessee:

  2. Montgomery County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland: EnergyInformation Montana Watershed1802095°,Missouri: EnergyTennessee:

  3. Lauderdale County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas:Montezuma, Arizona: Energy ResourcesProject | OpenLathrup Village,Tennessee: Energy

  4. Tennessee Pollution Prevention Partnership | Y-12 National Security Complex

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home RoomPreservationBio-Inspired Solar FuelTechnologyTel: Name: Rm. Tel: Location: Rm.Tennessee

  5. City of Bristol, Tennessee (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgia (UtilityBenham,Bowie, TexasTennessee (Utility

  6. City of Brownsville, Tennessee (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgia (UtilityBenham,Bowie,Tennessee (Utility Company)

  7. City of Covington, Tennessee (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgiaBurley,Columbus Place: OhioCornell,CouleeTennessee

  8. City of Etowah, Tennessee (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtdEllsworth, Iowa (Utility Company) Jump to:Enterprise,Tennessee

  9. City of Rockwood, Tennessee (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar EnergyLawler, Iowa (UtilityIowaIowaKansasTennessee (Utility Company) Jump to:

  10. City of Shelbyville, Tennessee (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar EnergyLawler, IowaScottsboro, Alabama (UtilityShelbyville, Tennessee (Utility

  11. City of Sparta, Tennessee (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar EnergyLawler, IowaScottsboro, AlabamaSlater, Missouri (UtilitySouthTennessee

  12. City of Springfield, Tennessee (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar EnergyLawler, IowaScottsboro, AlabamaSlater, MissouriSpooner,Tennessee

  13. Campbell County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,Cammack Village, Arkansas: Energy Resources JumpVerde,Tennessee: Energy

  14. Cannon County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,Cammack Village, Arkansas: EnergyCounty, Tennessee: Energy Resources Jump

  15. Carroll County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,Cammack Village, Arkansas:Fund forCarnegieIndiana:New Hampshire:Tennessee:

  16. Carter County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,Cammack Village, Arkansas:FundMichigan: EnergyMontana: EnergyTennessee:

  17. Bedford County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental JumpInformation Beaufort County, SouthBecker County,BedfordTennessee: Energy

  18. Benton County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental JumpInformation BeaufortBent County, Colorado:Mississippi:Tennessee: Energy

  19. Bradley County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank, Maine: Energy Resources Jump to:OpenBradfordwoods, Pennsylvania:Tennessee:

  20. Cheatham County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIR JumpMaine: Energy ResourcesTennessee: EnergyNew

  1. City of Chattanooga, Tennessee (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIRChurch Point,Blue Hill,Missouri (UtilityChattanooga, Tennessee

  2. City of Elizabethton, Tennessee (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIRChurch Point,BlueDeaver,Dighton, KansasElizabethton, Tennessee

  3. Claiborne County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company) Jump to: navigation,Vineland, NewCityClackamas,Tennessee:

  4. Clay County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company) Jump to:New York:Clay County,North Carolina: EnergyTennessee:

  5. Tennessee Eastman letter on Y-12 reduction in force

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking With U.S. CoalMexicoConference Tight Oil1 Soil Water andFoodTennessee

  6. Tennessee Natural Gas Underground Storage Volume (Million Cubic Feet)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking With U.S. CoalMexicoConference Tight Oil1 SoilPriceFeet)Tennessee

  7. ION GNSS12 Conference, Session F1, Nashville, TN (Sep 18-21, 2012) Investigating Indoor GPS Doppler and

    E-Print Network [OSTI]

    Calgary, University of

    1/10 ION GNSS12 Conference, Session F1, Nashville, TN (Sep 18-21, 2012) Investigating Indoor GPS School of Engineering Position, Location and Navigation (PLAN) Group University of Calgary BIOGRAPHY of the Department of Geomatics Engineering at the University of Calgary. He received his BSc from the Isfahan

  8. Indoor nitrogen dioxide in five Chattangooga, Tennessee public housing developments

    SciTech Connect (OSTI)

    Parkhurst, W.J.; Harper, J.P. ); Spengler, J.D.; Fraumeni, L.P.; Majahad, A.M. ); Cropp, J.W. )

    1988-01-01

    This report summarizes an indoor nitrogen dioxide (NO{sub 2}) sampling study conducted during January through March of 1987 in five Chattanooga public housing developments. The origins of this study date to the summer of 1983 when the Piney Woods Community Organization (a citizens action group) expressed concern about toxic industrial air pollution and the effects it might have on their community. In response to these concerns, the Chattanooga-Hamilton County Air Pollution Control Bureau (Bureau) requested assistance from the Tennessee Department of Health and Environment (TDHE) in conducting a community health survey and assistance from the Tennessee Valley Authority (TVA) in conducting a community air quality measurement program. The TDHE community health study did not find any significant differences between the mortality statistics for the Piney Woods community and a demographically similar control group. However, a health survey revealed that Piney Woods residents did not have a statistically significant higher self-reported prevalence of cough, wheezing, phlegm, breathlessness, colds, and respiratory illness.

  9. Tennessee Home to Energy Department's First Net-Zero-Energy Building

    Broader source: Energy.gov [DOE]

    Building 3156 stands on the campus of Oak Ridge National Laboratory in Oak Ridge, Tennessee. It's just one of many buildings at the various Energy Department national labs scattered across the country - or so it seems.

  10. THE UNIVERSITY OF TENNESSEE HEALTH SCIENCE CENTER (UTHSC) 2014 NURSING PRE-MATRICULATION PROGRAM APPLICATION

    E-Print Network [OSTI]

    Cui, Yan

    1 THE UNIVERSITY OF TENNESSEE HEALTH SCIENCE CENTER (UTHSC) 2014 NURSING PRE-MATRICULATION PROGRAM: _________________________________________________________________________________ CITIZENSHIP: Are you a U.S. Citizen, non-citizen national, or foreign national who possesses a visa permitting

  11. Fiscal year 1993 well plugging and abandonment program, Y-12 Plant, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Not Available

    1993-09-01

    This report is a synopsis of the progress of the well plugging and abandonment program at the Y-12 Plant, Oak Ridge, Tennessee, from December 1992 through August 20, 1993. A total of 70 wells and borings were plugged and abandoned during the period of time covered in this report. All wells and borings were plugged and abandoned in accordance with the Monitoring Well Plugging and Abandonment Plan for the US Department of Energy, Y-12 Plant, Oak Ridge, Tennessee (HSW, Inc. 1991).

  12. The measurement of contact areas and temperature during frictional sliding of Tennessee sandstone 

    E-Print Network [OSTI]

    Teufel, Lawrence William

    1976-01-01

    THE MEASUREMENT OF CONTACT AREAS AND TEMPERATURE DURING FRICTIONAL SLIDING OF TENNESSEE SANDSTONE A Thesis by LAWRENCE WILLIAM TEUFEL Submit';ed to the Graduate College of Texas ASM University in partial fulfillment of the requirements... for the degree of MASTERS OF SCIENCE August 1976 Major Subiect: Geology THE MEASUREMENT OF CONTACT AREAS AND TEMPERATURES DURING FRICTIONAL SLIDING OF TENNESSEE SANDSTONE A Thesis by LAWRENCE WILLIAM TEUFEL Approved as to sty1e and content by: Cha rma...

  13. Baseline Environmental Analysis Report for the K-1251 Barge Facility at the East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Van Winkle J.E.

    2007-08-24

    This report documents the baseline environmental conditions of the U. S. Department of Energy's (DOE's) K-1251 Barge Facility, which is located at the East Tennessee Technology Park (ETTP). DOE is proposing to lease the facility to the Community Reuse Organization of East Tennessee (CROET). This report provides supporting information for the use, by a potential lessee, of government-owned facilities at ETTP. This report is based upon the requirements of Sect. 120(h) of the Comprehensive Environmental Response, Compensation, and Liability Act of 1980 (CERCLA). The lease footprint is slightly over 1 acre. The majority of the lease footprint is defined by a perimeter fence that surrounds a gravel-covered area with a small concrete pad within it. Also included is a gravel drive with locked gates at each end that extends on the east side to South First Avenue, providing access to the facility. The facility is located along the Clinch River and an inlet of the river that forms its southern boundary. To the east, west, and north, the lease footprint is surrounded by DOE property. Preparation of this report included the review of government records, title documents, historic aerial photos, visual and physical inspections of the property and adjacent properties, and interviews with current and former employees involved in the operations on the real property to identify any areas on the property where hazardous substances and petroleum products or their derivatives and acutely hazardous wastes were known to have been released or disposed. Radiological surveys were conducted and chemical samples were collected to assess the facility's condition.

  14. Cko.efer f. (i.f\\~f':tn\\ltt E'~~CS'\\'~ A~\\ !f~ \\fb a... 'T":~4.r.-t..

    E-Print Network [OSTI]

    Li, Kin-Yin

    QC~-®! Cko.efer f. (i.f\\~f':tn\\ltt E'~~CS'\\'~ A~\\ !f~ \\fb a... 'T":~4.r.-t.. ~c-l.;~. ~e...CA weo

  15. The Graduate School The School of Graduate Studies has enjoyed more than 50 years of leadership in Tennessee and in

    E-Print Network [OSTI]

    Karsai, Istvan

    offerings at ETSU rank only behind the University of Tennessee, Knoxville and the University of Memphis. ETSU, along with Middle Tennessee State University, is the third-largest public graduate school and health sciences. This application booklet is designed to give you a brief overview of ETSU's wide range

  16. Environmental Compliance and Protection Program Description Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Bechtel Jacobs

    2009-02-26

    The objective of the Environmental Compliance and Protection (EC and P) Program Description (PD) is to establish minimum environmental compliance requirements and natural resources protection goals for the Bechtel Jacobs Company LLC (BJC) Oak Ridge Environmental Management Cleanup Contract (EMCC) Contract Number DE-AC05-98OR22700-M198. This PD establishes the work practices necessary to ensure protection of the environment during the performance of EMCC work activities on the US Department of Energy's (DOE's) Oak Ridge Reservation (ORR) in Oak Ridge, Tennessee, by BJC employees and subcontractor personnel. Both BJC and subcontractor personnel are required to implement this PD. A majority of the decontamination and demolition (D and D) activities and media (e.g., soil and groundwater) remediation response actions at DOE sites on the ORR are conducted under the authority of the Comprehensive Environmental Response, Compensation, and Liability Act of 1980 (CERCLA). CERCLA activities are governed by individual CERCLA decision documents (e.g., Record of Decision [ROD] or Action Memorandum) and according to requirements stated in the Federal Facility Agreement for the Oak Ridge Reservation (DOE 1992). Applicable or relevant and appropriate requirements (ARARs) for the selected remedy are the requirements for environmental remediation responses (e.g., removal actions and remedial actions) conducted under CERCLA.

  17. Results for the Independent Sampling and Analysis of Used Oil Drums at the Impact Services Facility in Oak Ridge, TN

    SciTech Connect (OSTI)

    2013-04-25

    The U.S. Department of Energy (DOE) requested that Oak Ridge Associated Universities (ORAU), via the Oak Ridge Institute for Science and Education (ORISE) contract, perform independent sampling and analysis of used oils contained within eight 55 gallon drums stored at the former IMPACT Services facility, located at the East Tennessee Technology Park in Oak Ridge, Tennessee. These drums were originally delivered by LATA Sharp Remediation Services (LSRS) to IMPACT Services on January 11, 2011 as part of the Bldg. K-33 demolition project, and the drums plus contents should have been processed as non-hazardous non-radiological waste by IMPACT Services. LSRS received a certificate of destruction on August 29, 2012 (LSRS 2012a). However, IMPACT Services declared bankruptcy and abandoned the site later in 2012, and eight of the original eleven K-33 drums are currently stored at the facility. The content of these drums is the subject of this investigation. The original drum contents were sampled by LSRS in 2010 and analyzed for gross alpha, gross beta, and polychlorinated biphenyls (PCBs), using both compositing and grab sampling techniques. The objective of this 2013 sample and analysis effort was to duplicate, to the extent possible, the 2010 sampling and analysis event to support final disposition decisions. Part of that decision process includes either verifying or refuting the assertion that oils that are currently stored in drums at the IMPACT Services facility originated from Bldg. K-33 equipment.

  18. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

    2010-11-15

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In{sub 0.33}Ga{sub 0.67}N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm{sup 2} at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm{sup 2}. These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  19. Fiscal year 1996 well plugging and abandonment program Y-12 Plant, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    1997-04-01

    This report is a synopsis of the progress of the well plugging and abandonment program at the Oak Ridge Y-12 Plant, Oak Ridge, Tennessee, from August 1995 through August 1996. A total of 27 wells, piezometers, and borings were plugged and abandoned during the period of time covered in this report. All wells and borings were plugged and abandoned in accordance with the Monitoring Well Plugging and Abandonment Plan for the U.S. Department of Energy, Y-12 Plant, Oak Ridge, Tennessee (HSW, Inc. 1991).

  20. Ann. nucl. Enerqy, Vol. 14, No. 2, pp. 63-75, 1987 Printed in Great Britain. All rights reserved

    E-Print Network [OSTI]

    Pázsit, Imre

    . GL~~CKLER~ University of Tennessee, Knoxville, TN 37338, U.S.A. I. PAZSIT$ Studsvik Energiteknik AB

  1. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  2. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer the radiative recombination rates across the active region. Consequently, the light output power was enhanced

  3. Type B Accident Investigation, Subcontractor Employee Personal Protective Equipment Ignition Incident on February 18, 2003, at the East Tennessee Technology Park, Oak Ridge, Tennessee

    Broader source: Energy.gov [DOE]

    On February 18, 2003, a general laborer employed at the East Tennessee Technology Park (ETTP) by MACTEC Constructors, Inc. (MACTEC) was performing rebar removal with a gas-powered cut-off machine. MACTEC is a subcontractor to Bechtel Jacobs Company LL (BJC). The sparks from the cut-off machine ignited the right leg of his 100% cotton anticontamination (anti-c) coveralls and the plastic bootie.

  4. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  5. System Description for the K-25/K-27 D&D Project Polyurethane Foam Delivery System, East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Boris, G.

    2008-02-21

    The Foam Delivery System used in the decontamination and decommissioning (D&D) project for the K-25/K-27 Buildings at the East Tennessee Technology Park (ETTP) is comprised of a trailer-mounted Gusmer{reg_sign} H20/35 Pro-TEC Proportioning Unit and the associated equipment to convey electrical power, air, and foam component material to the unit. This high-pressure, plural-component polyurethane foam pouring system will be used to fill process gas and non-process equipment/piping (PGE/P) within the K-25/K-27 Buildings with polyurethane foam to immobilize contaminants prior to removal. The system creates foam by mixing isocyanate and polyol resin (Resin) component materials. Currently, the project plans to utilize up to six foaming units simultaneously during peak foaming activities. Also included in this system description are the foam component material storage containers that will be used for storage of the component material drums in a staging area outside of the K-25/K-27 Buildings. The Foam Delivery System and foam component material storage enclosures (i.e., Foaming Component Protective Enclosures) used to store polymeric methylene diphenyl diisocyanate (PMDI) component material are identified as Safety Significant (SS) Structures, Systems and Components (SSC) in the Documented Safety Analysis (DSA) for the project, Documented Safety Analysis for the K-25 and K-27 Facilities at the East Tennessee Technology Park, Oak Ridge, Tennessee, DSA-ET-K-25/K-27-0001.

  6. Proceedings of the 2013 Joint Rail Conference April 15-18, 2013, Knoxville, Tennessee, USA

    E-Print Network [OSTI]

    Barkan, Christopher P.L.

    and cumulative freight tonnages, coupled with increased development of high speed passenger rail, is placing of further research are track components used in high speed passenger, heavy haul, and shared infrastructureProceedings of the 2013 Joint Rail Conference JRC2013 April 15-18, 2013, Knoxville, Tennessee, USA

  7. John T. Mihalczo PhD. in Nuclear Engineering : University of Tennessee, 1970

    E-Print Network [OSTI]

    security by affecting safer assembly and handling of nuclear weapons components materials. The technologies in nuclear criticality safety, nuclear weapons identification, nuclear materials processing, and nuclearJohn T. Mihalczo PhD. in Nuclear Engineering : University of Tennessee, 1970 Masters in Physics

  8. Transportation impacts on the Tennessee highway system proposed monitored retrievable storage

    SciTech Connect (OSTI)

    Cobble, C.

    1985-12-12

    The issue of the transport of spent fuels to the proposed monitored retrievable storage facility in Tennessee is discussed. Relevant issues include the ability of the roads and bridges on the transport routes to handle the weight of the trucks. (CBS)

  9. Transportation impacts on the Tennessee highway system proposed monitored retrievable storage. Final report

    SciTech Connect (OSTI)

    Cobble, C.

    1985-12-12

    The issue of the transport of spent fuels to the proposed monitored retrievable storage facility in Tennessee is discussed. Relevant issues include the ability of the roads and bridges on the transport routes to handle the weight of the trucks. (CBS)

  10. Form 207 Version Date: 5/31/07 Page 1 of 4 East Tennessee State University

    E-Print Network [OSTI]

    Karsai, Istvan

    Form 207 Version Date: 5/31/07 Page 1 of 4 Form 207 East Tennessee State University ETSU. CURRENT APPROVAL DATE: D. Location(s) Where Study is Being Conducted: ETSU VAMC JCMC Other MSHA Site: Name: ETSU Department & Box #: Off Campus Address: Phone: Pager: Fax: Email Address: Study Contact

  11. Self-Optimizing Control of a Large-Scale Plant: The Tennessee Eastman Process

    E-Print Network [OSTI]

    Skogestad, Sigurd

    Self-Optimizing Control of a Large-Scale Plant: The Tennessee Eastman Process Truls Larsson of freedom reoptimized). The following controlled variables are recommended for this process: optimally Eastman process. We base the variable selection on the concept of self- optimizing control using steady

  12. City of Knoxville, Tennessee City Council Resolution for solar PV system

    Office of Energy Efficiency and Renewable Energy (EERE)

    This document is a scan of the resolution, dated July 26, 2011, for the approval of the City of Knoxville, Tennessee to use $250,000 of EECBG funding for finding innovative financing mechanisms for a planned installation of a 90-kW solar PV system.

  13. DOE Awards Contract for Decontamination & Decommissioning Project for the East Tennessee Technology Park

    Broader source: Energy.gov [DOE]

    Oak Ridge, Tenn. – As part of its ongoing commitment to cleaning up the legacy of the Cold War at sites across the weapons complex, the U.S. Department of Energy has awarded a contract for the remaining environmental cleanup at the East Tennessee Technology Park (ETTP) to URS | CH2M Oak Ridge, LLC.

  14. Tiu Ch Chn La D n Khi Phc Sm Vo ngy 21 thng 4 nm 2011, cc y Vin nh Gi Tn Hi

    E-Print Network [OSTI]

    s tn hi cng là mt yu t quan trng trong quy trình la chn d án); Kh nng thành công ca tng gii pháp thay Tác ng ca mi gii pháp ti sc khe và s an toàn ca cng ng · óng góp vào vic bo v s toàn vn ca môi trng và nhiên i vi bên hoc các bên có trách nhim vi v tràn du iu này cng nhm tìm kim s n bù i vi tn hi gây ra

  15. EA-1113: Lease of Parcel ED-1 of the Oak Ridge Reservation By The East Tennessee Council

    Broader source: Energy.gov [DOE]

    This EA evaluates the potential environmental impacts associated with the proposed lease of 957.16 acres of the Oak Ridge Reservation to the East Tennessee Economic Council (ETEC). ETEC proposes ...

  16. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  17. EA-1113: Lease of Parcel ED-1 of the Oak Ridge Reservation By The East Tennessee Economic Council

    Broader source: Energy.gov [DOE]

    Lease of Parcel ED-1 of the Oak Ridge Reservation By The East Tennessee Economic Council This EA evaluates the potential environmental impacts for the proposed lease of 957.16 acres of the Oak Ridge Reservation to the East Tennessee Economic Council. ETEC proposes to develop an industrial park on the leased site to provide employment opportunities for DOE and contractor employees affected by decreased federal funding.

  18. Annual Performance Evaluation of a Pair of Energy Efficient Houses (WC3 and WC4) in Oak Ridge, TN

    SciTech Connect (OSTI)

    Biswas, Kaushik; Christian, Jeffrey E; Gehl, Anthony C; Jackson, Roderick K; Boudreaux, Philip R

    2012-04-01

    Beginning in 2008, two pairs of energy-saver houses were built at Wolf Creek in Oak Ridge, TN. These houses were designed to maximize energy efficiency using new ultra-high-efficiency components emerging from ORNL s Cooperative Research and Development Agreement (CRADA) partners and others. The first two houses contained 3713 square feet of conditioned area and were designated as WC1 and WC2; the second pair consisted of 2721 square feet conditioned area with crawlspace foundation and they re called WC3 and WC4. This report is focused on the annual energy performance of WC3 and WC4, and how they compare against a previously benchmarked maximum energy efficient house of a similar footprint. WC3 and WC4 are both about 55-60% more efficient than traditional new construction. Each house showcases a different envelope system: WC3 is built with advanced framing featured cellulose insulation partially mixed with phase change materials (PCM); and WC4 house has cladding composed of an exterior insulation and finish system (EIFS). The previously benchmarked house was one of three built at the Campbell Creek subdivision in Knoxville, TN. This house (CC3) was designed as a transformation of a builder house (CC1) with the most advanced energy-efficiency features, including solar electricity and hot water, which market conditions are likely to permit within the 2012 2015 period. The builder house itself was representative of a standard, IECC 2006 code-certified, all-electric house built by the builder to sell around 2005 2008.

  19. Knoxville, Tennessee: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE)

    Broader source: Energy.gov [DOE]

    This brochure provides an overview of the challenges and successes of Knoxville, TN, a 2008 Solar America City awardee, on the path toward becoming a solar-powered community. Accomplishments, case studies, key lessons learned, and local resource information are given.

  20. GaAs MOEMS Technology

    SciTech Connect (OSTI)

    SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.; TIGGES, CHRIS P.; RENO, JOHN L.; PEAKE, GREGORY M.; KLEM, JOHN F.; LEAN, JEN; FULLER, CHARLES T.; BURKHART, JEFF; BAUER, THOMAS; SULLIVAN, CHARLES T.

    2003-03-01

    Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vital step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.

  1. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  2. In: Proceedings of the 89th Annual Meeting (held June 23-28 in Nashville, TN), Air and Waste Management Association, Pittsburgh, Pennsylvania, June 1996 Paper No. 96-125.03 1996 H.C. Frey

    E-Print Network [OSTI]

    Frey, H. Christopher

    No. 96-125.03 Proceedings, 89th Annual Meeting June 23-28, 1996 Nashville, TN Air & Waste Management), Air and Waste Management Association, Pittsburgh, Pennsylvania, June 1996 Paper No. 96-125.03 © 1996 HIn: Proceedings of the 89th Annual Meeting (held June 23-28 in Nashville, TN), Air and Waste

  3. nh Gi Tn Hi Ti Nguyn Thin Nhin do Trn Du Deep Horizon D n nng cp ng mn vo Khu

    E-Print Network [OSTI]

    tht v dch v gii trí trong vùng t thuc B ni V nm bang vùng Vnh. Sau s c tràn du Deep Horizon, mt lng du và các hot ng i phó u ã làm tn tht các c hi gii trí và làm gim cht lng tri nghim ca du khách n khu

  4. Fiscal Year 2007 Phased Construction Completion Report for the Zone 2 Soils, Slabs, and Subsurface Structures at East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    RSI

    2008-03-01

    The purpose of this Phased Construction Completion Report (PCCR) is to present the fiscal year (FY) 2007 results of characterization activities and recommended remedial actions (RAs) for 11 exposure units (EUs) in Zone 2 (Z2-01, Z2-03, Z2-08, Z2-23, Z2-24, Z2-28, Z2-34, Z2-37, Z2-41, Z2-43, and Z2-44) at the East Tennessee Technology Park (ETTP), which is located in the northwest corner of the U.S. Department of Energy (DOE) Oak Ridge Reservation in Oak Ridge, Tennessee (Fig. 1). ETTP encompasses a total land area of approximately 5000 acres that has been subdivided into three zones--Zone 1 ({approx}1400 acres), Zone 2 ({approx}800 acres), and the Boundary Area ({approx}2800 acres). Zone 2, which encompasses the highly industrialized portion of ETTP shown in Fig. 1, consists of all formerly secured areas of the facility, including the large processing buildings and direct support facilities; experimental laboratories and chemical and materials handling facilities; materials storage and waste disposal facilities; secure document records libraries; and shipping and receiving warehouses. The Zone 2 Record of Decision for Soil, Buried Waste, and Subsurface Structure Actions in Zone 2, East Tennessee Technology Park, Oak Ridge, Tennessee (DOE 2005) (Zone 2 ROD) specifies the future end use for Zone 2 acreage as uncontrolled industrial for the upper 10 ft of soils. Characterization activities in these areas were conducted in compliance with the Zone 2 ROD and the Dynamic Verification Strategy (DVS) and data quality objectives (DQOs) presented in the Remedial Design Report/Remedial Action Work Plan for Zone 2 Soils, Slabs, and Subsurface Structures, East Tennessee Technology Park, Oak Ridge, Tennessee (DOE 2007) (Zone 2 RDR/RAWP). The purpose of this PCCR is to address the following: (1) Document DVS characterization results for the accessible EUs in FY 2007; (2) Describe and document the risk evaluation for each EU, and determine if the EU met the Zone 2 ROD requirements for unrestricted industrial use to 10 ft bgs; (3) Identify additional areas not defined in the Zone 2 ROD that require remediation based on the DVS evaluation results; and (4) Describe the RAs performed in Zone 2. The Zone 2 ROD divided the Zone 2 area into 7 geographic areas and 44 EUs. To facilitate the DQOs of the DVS process, the Zone 2 RDR/RAWP regrouped the 44 EUs into 12 DQO scoping EU groups. These groups facilitated the DQO process by placing similar facilities and their support facilities together and allowed identification of data gaps. The EU groups were no longer pertinent after DQO planning was completed, and characterization was conducted as areas became accessible. As the opportunity to complete characterization became available, the planned DVS program was executed and completed in FY 2007 for the 11 EUs addressed in this document. The main body of this report describes both the DVS process and scope of work performed and the RAs completed. The scope and approach for performing DVS activities performed in FY 2007 that lead to action/no further action decisions are presented in Sects. 2 through 4. RAs performed in FY 2007 are presented in Sects. 5 through 10. Future land use is described in Sect. 11, and the status of all Zone 2 EUs as of this PCCR is presented in Sect. 12.

  5. Computational analysis of thin film InGaAs/GaAs quantum well solar cells with

    E-Print Network [OSTI]

    Yu, Edward T.

    Computational analysis of thin film InGaAs/GaAs quantum well solar cells with back side light, Austin, TX 78758, USA * ety@ece.utexas.edu Abstract: Simulations of thin film (~2.5 µm thick) InGaAs/GaAs. Roberts, G. Hill, and C. Calder, "Progress in quantum well solar cells," Thin Solid Films 511­512, 76

  6. GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response

    E-Print Network [OSTI]

    Jalali. Bahram

    into existing multijunction cells either as a means to increase the current or efficiency by using low band gapGaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

  7. Remedial investigation/feasibility study for the David Witherspoon, Inc., 901 Site, Knoxville, Tennessee: Volume 1

    SciTech Connect (OSTI)

    1996-10-01

    This remedial investigation (RI)/feasibility study (FS) supports the selection of remedial actions for the David Witherspoon, Inc. 901 Maryville Pike Site in Knoxville, Tennessee. Operations at the site, used as a recycling center, have resulted in past, present, and potential future releases of hazardous substances in to the environment. This Site is a Tennessee Superfund site. A phased approach was planned to (1) gather existing data from previous investigations managed by the Tenn. Dept. of Environment and Conservation; (2) perform a preliminary RI, including risk assessments, and an FS with existing data to identify areas where remedial action may be necessary; (3) gather additional field data to adequately define the nature and extent of risk-based contaminants that present identifiable threats to human and/or ecological receptors; and (4) develop remedial action alternatives to reduce risks to acceptable levels.

  8. Hope and despair: visual arts in the drama of Tennessee Williams 

    E-Print Network [OSTI]

    Wallace, Stephanie

    2013-02-22

    possible cause of their subsequent inattention. Contents Introduction page 2 Section I: Expressionism as the Mind's Landscape Plays and Paintings Tennessee and Vincent 32 Section II: Logistics 36 Section HI: Physical Aihnents Manifest the Unruly... of literary art in each of them He paints his scenes, utilizing many of the devises which artists in the visual arts medium use. Williams himself ties the two worlds of the performing and visual arts closely together in his later work. Mary Ann Corrigan...

  9. World Record Earned Value Management System Certification for Cleanup of the East Tennessee Technology Park, Oak Ridge, Tennessee, USA - 13181

    SciTech Connect (OSTI)

    Haynes, Ray; Hirschy, Anita

    2013-07-01

    On projects that require Earned Value Management (EVMS) Certification, it is critical to quickly prepare for and then successfully obtain certification. This is especially true for government contracts. Projects that do poorly during the review are subject to financial penalties to their company and they lose creditability with their customer creating problems with the project at the outset. At East Tennessee Technology Park (ETTP), we began preparing for Department of Energy (DOE) certification early during proposal development. Once the contract was awarded, while still in transition phase from the previous contractor to our new company, we immediately began reviewing the project controls systems that were in place on the project and determined if any replacements needed to be made immediately. The ETTP contract required the scheduling software to be upgraded to Primavera P6 and we determined that no other software changes would be done prior to certification. Next, preparation of the Project Controls System Description (PCSD) and associated procedures began using corporate standards as related to the project controls systems. During the transition phase, development was started on the Performance Measurement Baseline which is the resource loaded schedule used to measure our performance on the project and which is critical to good Earned Value Management of the project. Early on, and throughout the baseline review, there was positive feedback from the Department of Energy that the quality of the new baseline was good. Having this superior baseline also contributed to our success in EVMS certification. The combined companies of URS and CH2M Hill had recent experience with certifications at other Department of Energy sites and we were able to capitalize on that knowledge and experience. Generic PCSD and procedures consistent with our co-operations approach to Earned Value Management were available to us and were easily tailorable to the specifics of our contract and site. We also had corporate EVMS experts available to us so as to draw upon their recent certification experiences with lessons learned. This knowledge was especially helpful for training of personnel that were involved in the certification which included Project Controls, Project Management and Control Account Managers. We were also able to bring in these corporate experts to assist with our training efforts. To assure our readiness for the review, we conducted a 'White Hat' review. The 'White Hat' team consisted of corporate experts in EVMS along with an industry expert in EVMS from Humphrey and Associates. This review identified early any weaknesses that we had so corrections could be enacted prior to the EVMS Certification Readiness Review. It also helped give the evaluators confidence that we had done proper due diligence prior to their arrival. Also critical to our success, was early communication with our evaluators. It is important to start the communications early to ensure you understand the expectations of the certification team and the process that will be used during the certification. Communication through the entire process is critical to understand expectations and issues along the way. Very important to the overall process was management commitment, support and reinforcement. Management made sure that all personnel involved knew the importance and made preparations a priority. This was noted as a key strength by the evaluators during the out-brief. As a result of our preparation, our review yielded one Corrective Action Report (CAR) and two Continuous Improvement Opportunities (CIOs). The Certification team in their out-brief explained that this was the lowest number of CARs and CIOs in the history of EVMS certifications in the DOE Complex. (authors)

  10. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  11. Retrospective on lessons from 1985 Tennessee MRS attempted siting: The local view

    SciTech Connect (OSTI)

    Peelle, E. (Oak Ridge National Lab., TN (United States))

    1991-11-01

    Six years have elapsed since the unsuccessful US Department of Energy (DOE) effort to site a monitored retrievable storage (MRS) facility in Tennessee. The local MRS task force (TF) effort in 1985 has been described extensively in prior publications. These articles described the successful interactions between DOE and the local TF in the context of extensive state and regional opposition. The MRS TF found that while the proposed facility could be safe, many conditions were needed to ensure its long-term safety and to change the net benefit balance from negative to positive. The DOE and the TF reached agreement on many of the TF conditions but were still far apart on others when negotiations ended in 1985. The local governments that had created the TF unanimously accepted its conclusion. The governor of Tennessee eventually vetoed the siting process, and the state sued in 1985 to stop the DOE from continuing its efforts. When Tennessee's legal block was removed in 1987, DOE presented its MRS recommendations to Congress. Two brief periods of activity among the TF and local political leaders included testimony in 1987 before two Congressional committees and before the MRS Study Commission in 1989. This testimony sought those additional conditions for siting the DOE had not given in its negotiations with the TF. The purpose of this paper is to evaluate key points and lessons learned from this path-breaking effort by a local unpaid TF of citizens and elected officials through its entire life until disbanding in 1989.

  12. 2012 ARPA-E Energy Innovation Summit Keynote Presentation (Frederick W. Smith, FedEx Corporation), with Introduction by Senator Lamar Alexander (TN)

    ScienceCinema (OSTI)

    Smith, Frederick W. (FedEx Corporation, Chairman, President and CEO)

    2014-04-09

    The third annual ARPA-E Energy Innovation Summit was held in Washington D.C. in February, 2012. The event brought together key players from across the energy ecosystem - researchers, entrepreneurs, investors, corporate executives, and government officials - to share ideas for developing and deploying the next generation of energy technologies. Following introduction by Senator Lamar Alexander of Tennessee, Frederick W. Smith, Chairman, President, and CEO of FedEx Corporation, gave the third keynote presentation of the day.

  13. Environmental Baseline Survey Report for the Title Transfer of Parcel ED-9 at the East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    SAIC

    2010-05-01

    This environmental baseline survey (EBS) report documents the baseline environmental conditions of the U. S. Department of Energy's (DOE's) Parcel ED-9 at the East Tennessee Technology Park (ETTP). Parcel ED-9 consists of about 13 acres that DOE proposes to transfer to Heritage Center, LLC (hereafter referred to as 'Heritage Center'), a subsidiary of the Community Reuse Organization of East Tennessee (CROET). The 13 acres include two tracts of land, referred to as ED-9A (7.06 acres) and ED-9B (5.02 acres), and a third tract consisting of about 900 linear feet of paved road and adjacent right-of-way, referred to as ED-9C (0.98 acres). Transfer of the title to ED-9 will be by deed under a Covenant Deferral Request (CDR) pursuant to Section 120(h)(3)(C) of the Comprehensive Environmental Response, Compensation, and Liability Act of 1980 (CERCLA). This report provides a summary of information to support the transfer of this government-owned property at ETTP to a non-federal entity.

  14. Phased Construction Completion Report for Bldg. K-1401 of the Remaining Facilities Demolition Project at the East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Bechtel Jacobs

    2008-10-01

    This Phased Construction Completion Report documents the demolition of Bldg. K-1401, Maintenance Building, addressed in the Action Memorandum for the Remaining Facilities Demolition Project at East Tennessee Technology Park, Oak Ridge, Tennessee (DOE 2003a) as a Comprehensive Environmental Response, Compensation, and Liability Act of 1980 non-time-critical removal action. The objectives of the removal action (DOE 2003a) - to eliminate the source of potential contamination, to eliminate the threat of potential future releases, and/or to eliminate the threats to the general public and the environment - were met. The end state of this action is for the slab to remain with all penetrations sealed and grouted or backfilled. The basement and pits remain open. There is residual radiological and polychlorinated biphenyl contamination on the slab and basement. A fixative was applied to the area on the pad contaminated with polychlorinated biphenyls. Interim land-use controls will be maintained until final remediation decisions are made under the Zone 2 Record of Decision (DOE 2005a).

  15. Phased Construction Completion Report for Building K-1401 of the Remaining Facilities Demolition Project at the East Tennessee Technology Park Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Garland S.

    2008-03-01

    This Phased Construction Completion Report documents the demolition of Bldg. K-1401, Maintenance Building, addressed in the Action Memorandum for the Remaining Facilities Demolition Project at East Tennessee Technology Park, Oak Ridge, Tennessee (DOE 2003a) as a Comprehensive Environmental Response, Compensation, and Liability Act of 1980 non-time-critical removal action. The objectives of the removal action (DOE 2003a) - to eliminate the source of potential contamination, to eliminate the threat of potential future releases, and/or to eliminate the threats to the general public and the environment - were met. The end state of this action is for the slab to remain with all penetrations sealed and grouted or backfilled. The basement and pits remain open. There is residual radiological and polychlorinated biphenyl contamination on the slab and basement. A fixative was applied to the area on the pad contaminated with polychlorinated biphenyls. Interim land-use controls will be maintained until final remediation decisions are made under the Zone 2 Record of Decision (DOE 2005a).

  16. Covenant Deferral Request for the Proposed Transfer of Land Parcel ED-8 at the East Tennessee Technology Park, Oak Ridge, Tennessee - Final - May 2009

    SciTech Connect (OSTI)

    SAIC

    2009-05-01

    The United States Department of Energy (DOE) is proposing to transfer a land parcel (hereinafter referred to as 'the Property') designated as Land Parcel ED-8 at the East Tennessee Technology Park (ETTP) in Oak Ridge, Tennessee, by deed, and is submitting this Covenant Deferral Request (CDR) pursuant to Section 120(h)(3)(C) of the Comprehensive Environmental Response, Compensation, and Liability Act (CERCLA), as amended, and applicable U. S. Environmental Protection Agency (EPA) guidance. The Oak Ridge Reservation (ORR), which includes ETTP, was placed on the National Priorities List (NPL) in November 1989. Environmental investigation and cleanup activities are continuing at ETTP in accordance with CERCLA, the National Contingency Plan (NCP), and the Federal Facility Agreement (FFA). The FFA was entered into by the DOE-Oak Ridge Office (ORO), EPA Region 4, and the Tennessee Department of Environment and Conservation (TDEC) in 1991. The FFA establishes the schedule and milestones for environmental remediation of the ORR. The proposed property transfer is a key component of the Oak Ridge Performance Management Plan (ORPMP) for accelerated cleanup of the ORR. DOE, using its authority under Section 161(g) of the Atomic Energy Act of 1954 (AEA), proposes to transfer the Property to Heritage Center, LLC, a subsidiary of the Community Reuse Organization of East Tennessee (CROET), hereafter referred to as 'Heritage Center.' CROET is a 501(c)(3) not-for-profit corporation established to foster the diversification of the regional economy by re-utilizing DOE property for private-sector investment and job creation. The Property is located in the southern portion of ETTP and consists of approximately 84 acres proposed as the potential site for new facilities to be used for office space, industrial activities, or other commercial uses. The parcel contains both grassy fields located outside the ETTP 'main plant' area and infrastructure located inside the 'main plant' area. No buildings are included in the proposed ED-8 transfer. The buildings in ED-8 have already been transferred (Buildings K-1007, K-1580, K-1330, and K-1000). These buildings are not included in the transfer footprint of Land Parcel ED-8. A number of temporary structures, such as trailers and tents (non-real property), are located within the footprint. These temporary structures are not included in the transfer. DOE would continue to be responsible for any contamination resulting from DOE activities that is present on the property at the time of transfer but found after the date of transfer. The deed transferring the Property contains various restrictions and prohibitions on the use of the Property that are subject to enforcement pursuant to State Law Tennessee Code Annotated (T.C.A.) 68-212-225 and state real property law. These restrictions and prohibitions are designed to ensure protection of human health and the environment.

  17. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  18. Barge loading facilities in conjunction with wood chipping and sawlog mill, Tennessee River Mile 145. 9R: Environmental assessment

    SciTech Connect (OSTI)

    Not Available

    1990-08-01

    The purpose of this Environmental Assessment (EA) is to evaluate the environmental consequences of approving, denying, or adopting reasonable alternatives to a request for barge loading facilities. These facilities would serve a proposed wood chipping and sawlog products operation at Tennessee River Mile (TRM) 145.9, right descending bank, (Kentucky Lake), in Perry County, Tennessee. The site is located between Short Creek and Peters Landing. The applicant is Southeastern Forest Products, L.P. (SFP), Box 73, Linden, Tennessee and the proposed facilities would be constructed on or adjacent to company owned land. Portions of the barge terminal would be constructed on land over which flood easement rights are held by the United States of America and administered by the Tennessee Valley Authority (TVA). The US Army Corps of Engineers (CE) and TVA have regulatory control over the proposed barge terminal facilities since the action would involve construction in the Tennessee River which is a navigable water of the United States. The wood chipping and sawlog products facilities proposed on the upland property are not regulated by the CE or TVA. On the basis of the analysis which follows, it has been determined that a modified proposal (as described herein) would not significantly affect the quality of the human environment, and does not require the preparation of an environmental impact statement. 8 refs.

  19. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the k·p method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 Å. The joint density of states and optical absorption of a 40/40 Å GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  20. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  1. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  2. Environmental Management Waste Management Facility Proxy Waste Lot Profile 6.999 for Building K-25 West Wing, East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Rigsby V.P.

    2009-02-12

    In 1989, the Oak Ridge Reservation (ORR), which includes the East Tennessee Technology Park (ETTP), was placed on the Comprehensive Environmental Response, Compensation, and Liability Act of 1980 (CERCLA) National Priorities List. The Federal Facility Agreement (FFA) (DOE 1992), effective January 1, 1992, now governs environmental restoration activities conducted under CERCLA at the ORR. Following signing of the FFA, U.S. Department of Energy (DOE), U.S. Environmental Protection Agency (EPA), and the state of Tennessee signed the Oak Ridge Accelerated Cleanup Plan Agreement on June 18, 2002. The purpose of this agreement is to define a streamlined decision-making process to facilitate the accelerated implementation of cleanup, resolve ORR milestone issues, and establish future actions necessary to complete the accelerated cleanup plan by the end of fiscal year 2008. While the FFA continues to serve as the overall regulatory framework for remediation, the Accelerated Cleanup Plan Agreement supplements existing requirements to streamline the decision-making process. Decontamination and decommissioning (D&D) activities of Bldg. K-25, the original gaseous diffusion facility, is being conducted by Bechtel Jacobs Company LLC (BJC) on behalf of the DOE. The planned CERCLA action covering disposal of building structure and remaining components from the K-25 building is scheduled as a non-time-critical CERCLA action as part of DOE's continuous risk reduction strategy for ETTP. The K-25 building is proposed for D&D because of its poor physical condition and the expense of surveillance and maintenance activities. The K-25/K-27 D&D Project proposes to dispose of the commingled waste listed below from the K-25 west side building structure and remaining components and process gas equipment and piping at the Environmental Management Waste Management Facility (EMWMF) under waste disposal proxy lot (WPXL) 6.999: (1) Building structure (e.g. concrete floors [excluding basement slab], roofing, structural steel supports, interior walls, and exterior walls) and support system components including the recirculation cooling water (RCW); electrical; communication; fire protection; ventilation; process coolant; process lube oil; utilities such as steam, water and drain lines; (2) Process Piping; (3) Seal Exhaust Headers; (4) Seal Exhaust Traps; (5) Process Valves; (6) Differential Blind Multipliers (DBM)/Partial Blind Multipliers (PBM); and (7) Aftercoolers (also known as Intercell coolers). Converters and compressors while components of the process gas system, are not included in this commingled waste lot. On January 6, 2009, a meeting was held with EPA, TDEC, DOE and the team for the sole purpose of finalizing the objectives, format, and content of WPXL 6.999. The objective of WPXL 6.999 was to provide a crosswalk to the building structure and the PGE components profiles. This was accomplished by providing tables with references to the specific section of the individual profiles for each of the WLs. There are two building profiles and eight PGE profiles. All of the waste identified in the individual profiles will be commingled, shipped, and disposed exclusively under WPXL 6.999. The individual profiles were provided to the EPA and Tennessee Department of Environment and Conservation (TDEC) for information purposes only. This summary WPXL 6.999 will be submitted to EPA, TDEC, and DOE for review and approval. The format agreed upon by the regulators and DOE form the basis for WPXL 6.999. The agreed format is found on pages v and vi of the CONTENTS section of this profile. The disposal of this waste will be executed in accordance with the Action Memorandum for the Decontamination and Decommissioning of the K-25 and K-27 Buildings, East Tennessee Technology Park, Oak Ridge, Tennessee (DOE 2002), Removal Action Work Plan for the K-25 and K-27 Buildings, Process Equipment Removal and Demolition, K-25/K-27 Project, East Tennessee Technology Park, Oak Ridge, Tennessee (DOE 2008a); Waste Handling Plan for Demolition of the K-25 and K-27 Bui

  3. COMPARISON OF RESULTS FOR QUARTER 4 SURFACE WATER SPLIT SAMPLES COLLECTED AT THE NUCLEAR FUELS SERVICES SITE, ERWIN, TN

    SciTech Connect (OSTI)

    none,

    2013-08-15

    Oak Ridge Associated Universities (ORAU), under the Oak Ridge Institute for Science and Education (ORISE) contract, collected split surface water samples with Nuclear Fuel Services (NFS) representatives on June 12, 2013. Representatives from the U.S. Nuclear Regulatory Commission (NRC) and the Tennessee Department of Environment and Conservation were also in attendance. Samples were collected at four surface water stations, as required in the approved Request for Technical Assistance number 11-018. These stations included Nolichucky River upstream (NRU), Nolichucky River downstream (NRD), Martin Creek upstream (MCU), and Martin Creek downstream (MCD). Both ORAU and NFS performed gross alpha and gross beta analyses, and Table 1 presents the comparison of results using the duplicate error ratio (DER), also known as the normalized absolute difference. A DER ≤ 3 indicates at a 99% confidence interval that split sample results do not differ significantly when compared to their respective one standard deviation (sigma) uncertainty (ANSI N42.22). The NFS split sample report specifies 95% confidence level of reported uncertainties (NFS 2013). Therefore, standard two sigma reporting values were divided by 1.96. In conclusion, most DER values were less than 3 and results are consistent with low (e.g., background) concentrations. The gross beta result for sample 5198W0014 was the exception. The ORAU gross beta result of 6.30 ± 0.65 pCi/L from location NRD is well above NFS's non-detected result of 1.56 ± 0.59 pCi/L. NFS's data package includes no detected result for any radionuclide at location NRD. At NRC's request, ORAU performed gamma spectroscopic analysis of sample 5198W0014 to identify analytes contributing to the relatively elevated gross beta results. This analysis identified detected amounts of naturally-occurring constituents, most notably Ac-228 from the thorium decay series, and does not suggest the presence of site-related contamination.

  4. nh gi Tn hi Ti nguyn Thin nhin do Trn du Deep Horizon Khi phc loi chim ng bin ti vng b bin Alabama

    E-Print Network [OSTI]

    ánh giá Tn hi Tài nguyên Thiên nhiên do Tràn du Deep Horizon Khôi phc loài chim ng bin ti vùng b Alabama s hình thành 5 nn làm t ca chim ng dc theo vùng b bin Mobile và Baldwin, Alabama tng c hi làm có th c tìm thy quanh nm ti khu vc b bin Alabama. Chim ng bin òi hi nhng khu vc làm t rng rãi vi

  5. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  6. Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    Gao, Feng, Ph. D. Massachusetts Institute of Technology

    2014-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

  7. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    director cds murder nudity soundtrack BBC movie releases footage worth documentary film Blu-rays Blu-ray Ga

  8. Explanation of Significant Differences for the Record of Decision for Interim Actions in Zone 1, East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Bechtel Jacobs

    2011-02-01

    Zone 1 is a 1400-acre area outside the fence of the main plant at The East Tennessee Technology Park (ETTP) in Oak Ridge, Tennessee. The Record of Decision for Interim Actions in Zone, ETTP (Zone 1 Interim ROD) (DOE 2002) identifies the remedial actions for contaminated soil, buried waste, and subsurface infrastructure necessary to protect human health and to limit further contamination of groundwater. Since the Zone 1 Interim Record of Decision (ROD) was signed, new information has been obtained that requires the remedy to be modified as follows: (1) Change the end use in Contractor's Spoil Area (CSA) from unrestricted industrial to recreational; (2) Remove Exposure Units (EU5) ZI-50, 51, and 52 from the scope of the Zone I Interim ROD; (3) Change the end use of the duct bank corridor from unrestricted industrial to restricted industrial; and (4) Remove restriction for the disturbance of soils below 10 feet in Exposure Unit (EU) Z1-04. In accordance with 40 Code of Federal Regulations (CFR) 300.435, these scope modifications are a 'significant' change to the Zone 1 Interim ROD. In accordance with CERCLA Sect. 117 (c) and 40 CFR 300.435 (c)(2)(i), such a significant change is documented with an Explanation of Significant Differences (ESD). The purpose of this ESD is to make the changes listed above. This ESD is part of the Administrative Record file, and it, and other information supporting the selected remedy, can be found at the DOE Information Center, 475 Oak Ridge Turnpike, Oak Ridge, Tennessee 37830, from 8:00 a.m. to 5:00 p.m., Monday through Friday. The ORR is located in Roane and Anderson counties, within and adjacent to the corporate city limits of Oak Ridge, Tennessee. ETTP is located in Roane County near the northwest corner of the ORR. ETTP began operation during World War II as part of the Manhattan Project. The original mission of ETTP was to produce enriched uranium for use in atomic weapons. The plant produced enriched uranium from 1945 until 1985. Uranium production was terminated in 1987. ORR was placed on the National Priorities List in 1989, so remediation activities are conducted under CERCLA. The primary contaminants of concern at ETTP follow: (1) In groundwater - volatile organic compounds (VOCs) at multiple locations (trichloroethene is generally the most prevalent compound); (2) In sediment - inorganic elements, radionuclides, and polychlorinated biphenyls; (3) In soil - inorganic elements, radionuclides, semivolatile organic compounds (particularly the polycyclic aromatic hydrocarbons), and VOCs; and (4) In facilities - radionuclides and polychlorinated biphenyls (abandoned facilities also pose a safety and health hazard to workers.) The purposes of the remedial actions selected in the Zone 1 Interim ROD are to allow unrestricted industrial use down to 10 feet and to remediate potential sources of groundwater contamination. Following is a summary of the major components of the Zone 1 Interim ROD remedy: (1) Excavation of the Blair Quarry burial area and associated contaminated soil; (2) Excavation of miscellaneous contaminated soil in the K-895 Cylinder Destruct Facility area and in the Powerhouse Area; (3) Removal of sludge and demolition of the K-710 sludge beds and Imhoff tanks; (4) Implementation of land use controls (LUCs); and (5) Characterization of soil and remediation of areas that exceed remediation levels.

  9. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  10. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  11. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  12. Engineering Evaluation Report on K-311-1 Floor Subsidence (2008 Annual Report) at the East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Knott R.B.

    2008-11-13

    The purpose of this task is to evaluate the effect of floor settlement on building structure, piping, and equipment foundations between column lines 1 and 2 and B and K of Bldg. K-311-1 (see Fig. A-1 in Appendix A) at East Tennessee Technology Park (ETTP), Oak Ridge, Tennessee. Revision 0 of this document covers the 2005 annual inspection. Revision 1 addresses the 2006 annual inspection, Revision 2 addresses the 2007 annual inspection, and Revision 3 covers the 2008 annual inspection, as indicated by the changed report title. A civil survey and visual inspection were performed. Only a representative number of points were measured during the 2008 survey. The exact location of a number of survey points in Table A-1 could not be accurately determined in the 2008 survey since these points had not been spray painted since 2003. The points measured are deemed adequate to support the conclusions of this report. Based on the survey and observations, there has been no appreciable change in the condition of the unit since the 2007 inspection. The subsidence of the floor presents concerns to the building structure due to the possible indeterminate load on the pipe gallery framing. Prior to demolition activities that involve the piping or removal of the equipment, such as vent, purge and drain and foaming, engineering involvement in the planning is necessary. The piping connected to the equipment is under stress, and actions should be implemented to relieve this stress prior to disturbing any of the equipment or associated piping. In addition, the load on the pipe gallery framing needs to be relieved prior to any activities taking place in the pipe gallery. Access to this area and the pipe gallery is not allowed until the stress is released.

  13. Lead test assembly irradiation and analysis Watts Bar Nuclear Plant, Tennessee and Hanford Site, Richland, Washington

    SciTech Connect (OSTI)

    1997-07-01

    The U.S. Department of Energy (DOE) needs to confirm the viability of using a commercial light water reactor (CLWR) as a potential source for maintaining the nation`s supply of tritium. The Proposed Action discussed in this environmental assessment is a limited scale confirmatory test that would provide DOE with information needed to assess that option. This document contains the environmental assessment results for the Lead test assembly irradiation and analysis for the Watts Bar Nuclear Plant, Tennessee, and the Hanford Site in Richland, Washington.

  14. Escape into illusions of the South in characters of Tennessee Williams 

    E-Print Network [OSTI]

    Van Nieuwenhuize, Paul Franklin

    1963-01-01

    ~ the plays, one should read1ly note the zreat similarity between events in the plays and events in Tennessee Wil)iams' 11fe. ERO'. E . . . it is "-r. =tive work t . e erson . I so "uc~ o al' so clo eiy re . . c to the o. e;ho =oes it. " Bio... himself working for sixty-five dollars a month as a clerk-typist and odd- Job man at the International Shoe Company, where ac! ordinS to the Nelson bioSranhy, Williams often spent ten to twelve hour s a day at a Job he thorouShly despised. At night he...

  15. lLLiad TN:

    E-Print Network [OSTI]

    The dissipated energy is expressed by tan 6, which is called the loss factor or the .... ing of drifted wind-packed snow on the lee side of the terminal moraine.

  16. lLLiad TN:

    E-Print Network [OSTI]

    and Yamaji (1954; 1956) have measured Young's modulus and viscosity of ... perpendicular to the plane of bending; k'2 = hz/lZ. for a rectangular bar. h is the .... Consolidated Engineering Corporation's Type 5-118 with paper speed of 3 in.

  17. Scientific Achievement Networks of highly photoresponsive crystalline GaSe

    E-Print Network [OSTI]

    Geohegan, David B.

    Scientific Achievement Networks of highly photoresponsive crystalline GaSe nanosheets a crystalline GaSe target was adjusted to directly grow networks of interconnected triangular GaSe crystalline nanosheets of ~ 200 nm size (inset shows atomic

  18. EIS-0071: Memphis Light, Gas and Water Division Industrial Fuels Gas Demonstration Plant, Memphis, Shelby County, Tennessee

    Broader source: Energy.gov [DOE]

    The U.S. Department of Energy developed this EIS to assesses the potential environmental impacts associated with the construction and operation of a 3,155-ton-per-day capacity facility, which will demonstrate the technical operability, economic viability, and environmental acceptability of the Memphis Division of Light, Gas and Water coal gasification plant at Memphis, Tennessee.

  19. THE UNIVERSITY OF TENNESSEE KNOXVILLE, COLLEGE OF ENGINEERING www.engr.utk.edu Continued on page 3

    E-Print Network [OSTI]

    Wang, Xiaorui "Ray"

    and worked as a U.S. Naval Officer on naval nuclear submarines from 1987 to 1990. He started his career at UT in the nuclear engineering and materials science departments. Dr. J. Wesley Hines, the current interim vice chancellor for research at the University of Tennessee, Knoxville and a nuclear engineering professor, has

  20. EA-1779: Proposed Changes to the Sanitary Biosolids Land Application Program on the Oak Ridge Reservation, Oak Ridge, Tennessee

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts of a proposal to amend (e.g., by changing setback requirements from surface water features and potential channels to groundwater) the Sanitary Biosolids Land Application Program at the Oak Ridge Reservation in Oak Ridge, Tennessee.

  1. Final review of the Campbell Creek demonstrations showcased by Tennessee Valley Authority

    SciTech Connect (OSTI)

    Gehl, Anthony C.; Munk, Jeffrey D.; Jackson, Roderick K.; Boudreaux, Philip R.; Miller, William A.; New, Joshua Ryan; Khowailed, Giannate

    2015-06-01

    The Tennessee Valley Authority (TVA) Technology Innovation, Energy Efficiency, Power Delivery and Utilization Office funded and managed a showcase demonstration located in the suburbs of west Knox county, Tennessee. Work started March 2008 with the goal of documenting best practices for retrofitting existing homes and for building new high-efficiency homes. The Oak Ridge National Laboratory and the Electric Power Research Institute (EPRI) provided technical support. An analytical base was developed for helping homeowners, homebuyers, builders, practitioners and the TVA make informed economic decisions for the materials and incentives necessary to build a new high-efficiency home or retrofit an existing home. New approaches to more efficiently control active energy subsystems and information for selecting or upgrading to Energy Star appliances, changing all lights to 100% CFL s and upgrading windows to low-E gas filled glazing yields a 40% energy savings with neutral cash flow for the homeowner. Passive designs were reviewed and recommendations made for envelope construction that is durable and energy efficient. The Campbell Creek project complements the DOE Building Technologies Program strategic goal. Results of the project created technologies and design approaches that will yield affordable energy efficient homes. The 2010 DOE retrofit goals are to find retrofit packages that attain 30% whole house energy savings as documented by pre and post Home Energy rating scores (HERS). Campbell Creek met these goals.

  2. Routine environmental audit of the Y-12 Plant, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    NONE

    1994-09-01

    This report documents the results of the routine environmental audit of the Oak Ridge Y-12 Plant (Y-12 Plant), Anderson County, Tennessee. During this audit, the activities conducted by the audit team included reviews of internal documents and reports from previous audits and assessments; interviews with U.S. Department of Energy (DOE), State of Tennessee regulatory, and contractor personnel; and inspections and observations of selected facilities and operations. The onsite portion of the audit was conducted August 22-September 2, 1994, by the DOE Office of Environmental Audit (EH-24), located within the Office of Environment, Safety and Health (EH). DOE 5482.1 B, {open_quotes}Environment, Safety, and Health Appraisal Program,{close_quotes} establishes the mission of EH-24 to provide comprehensive, independent oversight of DOE environmental programs on behalf of the Secretary of Energy. The ultimate goal of EH-24 is enhancement of environmental protection and minimization of risk to public health and the environment. EH-24 accomplishes its mission by conducting systematic and periodic evaluations of DOE`s environmental programs within line organizations, and by using supplemental activities that strengthen self-assessment and oversight functions within program, field, and contractor organizations. The audit evaluated the status of programs to ensure compliance with Federal, state, and local environmental laws and regulations; compliance with DOE Orders, guidance, and directives; and conformance with accepted industry practices and standards of performance. The audit also evaluated the status and adequacy of the management systems developed to address environmental requirements.

  3. Wireless Roadside Inspection Phase II Tennessee Commercial Mobile Radio Services Pilot Test Final Report

    SciTech Connect (OSTI)

    Franzese, Oscar; Lascurain, Mary Beth; Capps, Gary J; Siekmann, Adam

    2011-05-01

    The Federal Motor Carrier Safety Administration (FMCSA) Wireless Roadside Inspection (WRI) Program is researching the feasibility and value of electronically assessing truck and bus driver and vehicle safety at least 25 times more often than is possible using only roadside physical inspections. The WRI program is evaluating the potential benefits to both the motor carrier industry and to government. These potential benefits include reduction in accidents, fatalities and injuries on our highways and keeping safe and legal drivers and vehicles moving on the highways. WRI Pilot tests were conducted to prototype, test and demonstrate the feasibility and benefits of electronically collecting safety data message sets from in-service commercial vehicles and performing wireless roadside inspections using three different communication methods. This report summarizes the design, conduct and results of the Tennessee CMRS WRI Pilot Test. The purpose of this Pilot test was to demonstrate the implementation of commercial mobile radio services to electronically request and collect safety data message sets from a limited number of commercial vehicles operating in Tennessee. The results of this test have been used in conjunction with the results of the complimentary pilot tests to support an overall assessment of the feasibility and benefits of WRI in enhancing motor carrier safety (reduction in accidents) due to increased compliance (change in motor carrier and driver behavior) caused by conducting frequent safety inspections electronically, at highway speeds, without delay or need to divert into a weigh station

  4. Evaluation of the water quality in the releases from thirty dams in the Tennessee River Valley

    SciTech Connect (OSTI)

    Butkus, S.R.

    1990-09-01

    The Tennessee Valley Authority (TVA) has routinely monitored dissolved oxygen (DO) and temperature from the tailwater releases of its dams since the 1950s. The original objective of this monitoring was to collect baseline information to support reaeration research and determine the relative impact of impoundments on the assimilative capacity of the river system. This monitoring has continued even though the original objective was satisfied. New purposes for this monitoring data have arisen in support of several programs, without new consideration of the monitoring strategy and sampling design. The primary purpose of this report is to compare the historical release data for 30 dams in the Tennessee Valley based on four different objectives: (1) comparison of seasonal patterns, (2) comparison of baseline conditions using descriptive statistics, (3) evaluation of monotonic trends, and (4) discussion of monitoring strategies that might be required to determine compliance with existing and proposed criteria. A secondary purpose of the report is to compile the existing database into tables and figures that would be useful for other investigators. 51 refs., 210 figs., 1 tab.

  5. Industrial cogeneration case study No. 3: Mead Corporation Paper Mill, Kingsport, Tennessee

    SciTech Connect (OSTI)

    Not Available

    1980-04-01

    The design, operation, performance, economics and energy efficiency of the 25,000 kW co-generating power plant at the Mead Co. paper mill in Kingsport, TN are described, and compared with the efficiency of producing only process heat at the plant while importing electric power from a local utility. It was established that on-site co-generation consumed 2/3 of the energy that would have been required for on-site process heat generation plus purchased off-site-generated electric power and that co-generation resulted in more than $2.8 million saved during the period from 1975 through 1978. (LCL)

  6. Development of metallization for GaAs and AlGaAs concentrator solar cells

    SciTech Connect (OSTI)

    Tobin, S.P.

    1987-04-01

    A three-layer metallization system was developed for high temperature stability on GaAs and AlGaAs solar cells. The layers are a Pt ohmic contact metal that forms thermally stable compounds with GaAs, a TiN diffusion barrier, and a gold conductor. The solar cell structure was also designed for contact stability, with the key component being a heavily doped GaAs cap layer. Reactively sputtered TiN was found to act as an excellent barrier when deposited under the proper conditions. The conditions were carefully optimized for low resistivity and low stress in the films. A low but nonzero substrate bias during sputtering was found to be important. Solar cells with sputtered metallizations of Pt/TiN/Ti/Pt/Au were found to be thermally stable up to 500/sup 0/C for 15 minutes in vacuum. At 600/sup 0/C there was catastrophic degradation of the cells due to dissociation of uncapped GaAs surfaces. Below this temperature the metallization performed as designed. The Pt and GaAs layers reacted to form a stable PtGa compound layer that gave low contact resistance. There was no penetration of Au or GaAs through the barrier layer. These results are a very encouraging first step leading to stable, reliable GaAs and AlGaAs concentrator cells.

  7. Opportunities for Cost Effective Disposal of Radioactively Contaminated Solid Waste on the Oak Ridge Reservation, Oak Ridge, TN - 13045

    SciTech Connect (OSTI)

    DeMonia, Brian [Department of Energy, P.O. Box 2001, Oak Ridge, Tennessee 37831 (United States)] [Department of Energy, P.O. Box 2001, Oak Ridge, Tennessee 37831 (United States); Dunning, Don [Argonne National Laboratory, P.O. Box 6974, Oak Ridge, Tennessee 37831-6974 (United States)] [Argonne National Laboratory, P.O. Box 6974, Oak Ridge, Tennessee 37831-6974 (United States); Hampshire John [UCOR, PO Box 4699, MS-7593, Oak Ridge, Tennessee 37831 (United States)] [UCOR, PO Box 4699, MS-7593, Oak Ridge, Tennessee 37831 (United States)

    2013-07-01

    Department of Energy (DOE) requirements for the release of non-real property, including solid waste, containing low levels of residual radioactive materials are specified in DOE Order 458.1 and associated guidance. Authorized limits have been approved under the requirements of DOE Order 5400.5, predecessor to DOE Order 458.1, to permit disposal of solid waste containing low levels of residual radioactive materials at solid waste landfills located within the DOE Oak Ridge Reservation (ORR). Specifically, volumetric concentration limits for disposal of solid waste at Industrial Landfill V and at Construction/Demolition Landfill VII were established in 2003 and 2007, respectively, based on the requirements in effect at that time, which included: an evaluation to ensure that radiation doses to the public would not exceed 25 mrem/year and would be as low as reasonably achievable (ALARA), with a goal of a few mrem/year or less (in fact, these authorized limits actually were derived to meet a dose constraint of 1 mrem/year); an evaluation of compliance with groundwater protection requirements; and reasonable assurance that the proposed disposal is not likely to result in a future requirement for remediation of the landfill. Prior to approval as DOE authorized limits, these volumetric concentration limits were coordinated with the Tennessee Department of Environment and Conservation (TDEC) and documented in a Memorandum of Understanding (MOU) between the TDEC Division of Radiological Health and the TDEC Division of Solid Waste Management. These limits apply to the disposal of soil and debris waste generated from construction, maintenance, environmental restoration, and decontamination and decommissioning (D and D) activities on the DOE Oak Ridge Reservation. The approved site-specific authorized limits were incorporated in the URS/CH2M Oak Ridge LLC (UCOR) waste profile system that authorizes disposal of special wastes at either of the RCRA Subtitle D landfills. However, a recent DOE assessment found that implementation of the site-specific authorized limits for volumetrically contaminated waste was potentially limited due in part to confusion regarding the applicability of volumetric concentration limits and/or surface activity limits to specific wastes. This paper describes recent efforts to update the authorized limits for Industrial Landfill V and Construction/Demolition Landfill VII and to improve the procedures for implementation of these criteria. The approved authorized limits have been evaluated and confirmed to meet the current requirements of DOE Order 458.1, which superseded DOE Order 5400.5 in February 2011. In addition, volumetric concentration limits have been developed for additional radionuclides, and site-specific authorized limits for wastes with surface contamination have been developed. Implementing procedures have been revised to clarify the applicability of volumetric concentration limits and surface activity limits, and to allow the use of non-destructive waste characterization methods. These changes have been designed to promote improved utilization of available disposal capacity of the onsite disposal facilities within the DOE Oak Ridge Reservation. In addition, these changes serve to bring the waste acceptance requirements at these DOE onsite landfills into greater consistency with the requirements for commercial/ public landfills under the TDEC Bulk Survey for Release (BSFR) program, including two public RCRA Subtitle D landfills in close proximity to the DOE Oak Ridge Reservation. (authors)

  8. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; Worschech, L.; Gru?tzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  9. Inspection of Environment, Safety, and Health and Emergency Management at the Oak Ridge Operations Office and East Tennessee Technology Park, Summary Report, May 2003

    Office of Energy Efficiency and Renewable Energy (EERE)

    This report provides the results of an inspection of environment, safety, and health and emergency management programs at the U.S. Department of Energy's (DOE) East Tennessee Technology Park (ETTP).

  10. Ohmic contacts to n-GaSb 

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  11. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  12. Fiscal Year 2010 Phased Construction Completion Report for EU Z2-32 in Zone 2, East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Bechtel Jacobs

    2010-02-01

    The Record of Decision for Soil, Buried Waste, and Subsurface Structure Actions in Zone 2, East Tennessee Technology Park, Oak Ridge, Tennessee (DOEIORJO 1-2161 &D2) (Zone 2 ROD) acknowledged that most of the 800 acres in Zone 2 were contaminated, but that sufficient data to confirm the levels of contamination were lacking. The Zone 2 ROD further specified that a sampling strategy for filling the data gaps would be developed. The Remedial Design Report/Remedial Action Work Plan for Zone 2 Soils, Slabs, and Subsurface Structures, East Tennessee Technology Park, Oak Ridge, Tennessee (DOEIORIO 1 -2224&D3) (RDRJRAWP) defined the sampling strategy as the Dynamic Verification Strategy (DVS), generally following the approach used for characterization of the Zone I exposure units (EUs). The Zone 2 ROD divided the Zone 2 area into seven geographic areas and 44 EUs. To facilitate the data quality objectives (DQOs) of the DVS process, the RDR/RAWP regrouped the 44 EUs into 12 DQO scoping EU groups. These groups facilitated the DQO process by placing similar facilities and their support facilities together, which allowed identification of data gaps. The EU groups were no longer pertinent after DQO planning was completed and characterization was conducted as areas became accessible. As the opportunity to complete characterization became available, the planned DVS program was completed for the EU addressed in this document (EU Z2-32). The purpose of this Phased Construction Completion Report (PCCR) is to address the following: (1) Document DVS characterization results for EU Z2-32. (2) Describe and document the risk evaluation and determine if the EU meets the Zone 2 ROD requirements for unrestricted industrial use to 10 ft bgs. (3) Identify additional areas not defined in the Zone 2 ROD that require remediation based on the DVS evaluation results. (4) Describe the remedial action performed in the K-1066-G Yard in EU Z2-32. Approximately 18.4 acres are included in the EU addressed in this PCCR. Based on results of the DVS evaluation, all 18.4 acres are recommended for unrestricted industrial use to 10 ft bgs. There are no Federal Facility Agreement Sites included in Appendix A of the Zone 2 ROD in EU Z2-32. The Zone 2 ROD requires land use controls to prevent disturbance of soils below 10 ft deep and to restrict future land use to industrial/commercial activities. In response to stakeholder comments, the U.S. Department of Energy agreed to re-evaluate the need for such land use restrictions. This document includes a screening evaluation to determine the likelihood of land use controls in EU Z2-32 being modified to: (1) eliminate the restriction on disturbance of soils below 10 ft bgs where data indicate the absence of residual contamination at any depth that would result in an unacceptable risk to the future industrial worker, and (2) permit alternative land uses that would be protective of future site occupants. Results of this screening evaluation indicate a high probability that restrictions on disturbing soil below 10 ft bgs could be safely eliminated for EU Z2-32. A qualitative screening evaluation considered the likelihood of unrestricted land use being protective of future site occupants. Based on this qualitative assessment, all 18.4 acres addressed in this PCCR were assigned a high probability for consideration of release for unrestricted land use. This document contains the main text (Sects. 1 through 13) and one appendix. The main text addresses the purpose for this PCCR as described above. Additional supporting detail (e.g., field work and data summaries, graphics) is provided in the EU Z2-32 technical memorandum (Appendix A). Historical and DVS analytical data used in this PCCR are provided on a compact disc accompanying this document and can be accessed through the Oak Ridge Environmental Information System.

  13. Annual Storm Water Report for the Y-12 National Security Complex Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Environment Compliance Department

    2012-01-01

    The storm water pollution prevention program at the Y-12 National Security Complex (Y-12 Complex) intends to protect the quality of storm water runoff through: (1) reducing the exposure of metal accumulation areas to precipitation, (2) implementation of Best Management Practices, (3) sampling during rain events and subsequent analysis, and (4) routine surveillances. When prescribed, the analytical data is compared to a set of cut-off concentration values to determine how the Y-12 Complex relates to other metal fabrication industries in the state of Tennessee. The quality of the storm water exiting the Y-12 Complex via East Fork Poplar Creek indicated some improvement in 2011. This improvement is attributable to the completion of several construction, demolition and remediation projects which occurred in 2010 and 2011. Emphasis will continue to be placed on site inspections and the timely implementation of improved storm water control measures as deemed necessary.

  14. Annual Storm Water Report for the Y-12 National Security Complex, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Clean Water Compliance Section of the Environment Compliance Department

    2012-01-01

    The storm water pollution prevention program at the Y-12 National Security Complex (Y-12 Complex) intends to protect the quality of storm water runoff through: (1) reducing the exposure of metal accumulation areas to precipitation, (2) implementation of Best Management Practices, (3) sampling during rain events and subsequent analysis, and (4) routine surveillances. When prescribed, the analytical data is compared to a set of cut-off concentration values to determine how the Y-12 Complex relates to other metal fabrication industries in the state of Tennessee. The quality of the storm water exiting the Y-12 Complex via East Fork Poplar Creek indicated some improvement in 2011. This improvement is attributable to the completion of several construction, demolition and remediation projects which occurred in 2010 and 2011. Emphasis will continue to be placed on site inspections and the timely implementation of improved storm water control measures as deemed necessary.

  15. Small Wind Electric Systems: A Guide Produced for the Tennessee Valley Authority (Revised) (Brochure)

    SciTech Connect (OSTI)

    Not Available

    2009-06-01

    Small Wind Electric Systems: A Guide Produced for the Tennessee Valley Authority provides consumers with information to help them determine whether a small wind electric system can provide all or a portion of the energy they need for their home or business based on their wind resource, energy needs, and their economics. Topics discussed in the guide include how to make a home more energy efficient, how to choose the correct turbine size, the parts of a wind electric system, how to determine whether enough wind resource exists, how to choose the best site for a turbine, how to connect a system to the utility grid, and whether it's possible to become independent of the utility grid using wind energy. In addition, the cover of the guide contains a regional wind resource map and a list of incentives and contacts for more information.

  16. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  17. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2007-01-01

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  18. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys Weili Liua and Alexander A. Balandin have investigated theoretically the thermoelectric effects in wurtzite GaN crystals and AlxGa1-xN-based alloys may have some potential as thermoelectric materials at high temperature. It was found

  19. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  20. DOE/ORO/2119 Oak Ridge Reservation Annual Site

    E-Print Network [OSTI]

    Pennycook, Steve

    Laboratory East Tennessee Technology Park Electronic publisher Coordinating editor Graphic artist Sandi and by East Tennessee Technology Park P.O. Box 4699, Oak Ridge, TN 37831-4699 Managed by Bechtel Jacobs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-2 1.3 CLIMATE

  1. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  2. A hole accelerator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Demir, Hilmi Volkan, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey)

    2014-10-13

    The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

  3. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D?=0.53(×2.1±1) cm² s?¹ that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  4. Supplemental Radiological Survey Plan for the Lease of the Rooms Associated with C107 of Building K-1006 at the East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Blevins M.F.

    2010-09-01

    In 1998, a portion of Bldg. K-1006 was leased to the Community Reuse Organization of East Tennessee (CROET) as part of the reindustrialization efforts at the East Tennessee Technology Park (ETTP). The facility was subleased and is being used as an analytical laboratory. The 1998 lease did not include rooms C107, C107-A, C107-B, C107-C, and C107-D. The lease of these rooms is now desired. These rooms comprise the area to be surveyed. The building was constructed as a laboratory facility to support the gaseous diffusion uranium enrichment process. It also contains offices and administrative spaces for laboratory personnel. After the gaseous diffusion process was shut down in the mid-1980s, the building was used to provide research and development support to ETTP environmental, safety, and health programs; the Toxic Substances Control Act Incinerator; the Central Neutralization Facility; and other multi-site waste treatment activities. It also served as the chemistry laboratory for the Environmental Technology Technical Services Organization. The activities currently conducted in Bldg. K-1006 utilize a variety of analytical techniques. Some of the major techniques being employed are X-ray analysis, electron microanalysis, and spectrochemical analysis. In 1998, a portion of Bldg. K-1006 was leased to CROET as part of the reindustrialization efforts at ETTP. The facility was subleased and is being used as an analytical laboratory. The 1998 lease did not include Rooms C107, C107-A, C107-B, C107-C, and C107-D. Some demolition of furniture and decontamination activities has taken place for Rooms C 107 and C 107-B since the last radiological survey of those rooms. In March 2009, a final remedial action (RA) was performed for the Bldg. K-1006 north basement sump. The Bldg. K-1006 north basement sump is a nominal 30-in.-diameter, 36-in.-deep concrete structure in the north corner of room C107B. The building receives groundwater in-leakage that is periodically pumped to the sewer system via this float-controlled pump. Solids in the bottom of the sump consisted of an estimated 1-ft{sup 3} coarse-grained material that varied in thickness from 0 to 4 in. with no suspended fraction. The RA consisted of removing the water in the sump and then removing and sampling the solids. The solids were mixed with grout after removal and allowed to set. The solids were then disposed off-site at an approved disposal facility. The building sump will remain until the K-1006 building is demolished. The actions for the K- 1006 sump are described in the revised Phased Construction Completion Report for Exposure Unit (EU) Z2-33, which received regulatory approval in December 2009.

  5. Remedial investigation/feasibility study for the David Witherspoon, Inc., 901 Site, Knoxville, Tennessee: Volume 2, Appendixes

    SciTech Connect (OSTI)

    1996-10-01

    This document contains the appendixes for the remedial investigation and feasibility study for the David Witherspoon, Inc., 901 site in Knoxville, Tennessee. The following topics are covered in the appendixes: (A) David Witherspoon, Inc., 901 Site Historical Data, (B) Fieldwork Plans for the David Witherspoon, Inc., 901 Site, (C) Risk Assessment, (D) Remediation Technology Discussion, (E) Engineering Support Documentation, (F) Applicable or Relevant and Appropriate Requirements, and (G) Cost Estimate Documentation.

  6. INFRARED LIGHT CURVES OF MIRA VARIABLE STARS FROM COBE DIRBE DATA Beverly J. Smith

    E-Print Network [OSTI]

    Luttermoser, Donald G.

    of Physics and Astronomy, East Tennessee State University, Box 70652, Johnson City, TN 37614; smithbj@etsu, Johnson City, TN 37614; lutter@etsu.edu Received 2001 September 28; accepted 2001 November 5 ABSTRACT We

  7. Page 1 of 26 Linda Christine Kah

    E-Print Network [OSTI]

    Kah, Linda

    ) data and laboratory experiments to understand broad-scale trends in biospheric evolution; additional circulation, and the Ordovician radiation Unusual carbonate fabrics in the Precambrian and implications and Humanities Symposium (Knoxville, TN) (2013) East Tennessee Geological Society (Knoxville, TN) (2013

  8. TITLE AUTHORS SUBJECT SUBJECT RELATED DESCRIPTION PUBLISHER AVAILABILI...

    Office of Scientific and Technical Information (OSTI)

    Toward a new metric for ranking high performance computing systems Heroux Michael Allen Dongarra Jack University of Tennessee Knoxville TN The High Performance Linpack HPL or Top...

  9. TITLE AUTHORS SUBJECT SUBJECT RELATED DESCRIPTION PUBLISHER AVAILABILI...

    Office of Scientific and Technical Information (OSTI)

    Improvements of Nuclear Data and Its Uncertainties by Theoretical Modeling Talou Patrick Los Alamos National Laboratory Nazarewicz Witold University of Tennessee Knoxville TN USA...

  10. Search for: All records | SciTech Connect

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reno, NV (United States) EERE Publication and Product Library East Tennessee Technology Park (ETTP), Oak Ridge, TN (United States) Energy Frontier Research Centers Energy...

  11. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  12. Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells

    E-Print Network [OSTI]

    Weinstein, Benard.A.

    recently that the temperature shifts of the photo- and electroluminescence EL peak energies in Nichia greenV/GPa for the green and blue diodes, respectively. The observed pressure coefficients are much lower than those characteristic of the energy gap in GaN ( 40 meV/GPa) or the energy gap in InN ( 33 meV/GPa). This kind

  13. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  14. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  15. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore »to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  16. IEEE Energy2030 Atlanta, GA USA

    E-Print Network [OSTI]

    Gross, George

    of an aggregation of battery vehicles for the provision of frequency regulation ­ requiring very fast response timesIEEE Energy2030 Atlanta, GA USA 17-18 November, 2008 Design of a Conceptual Framework for the V2G in common is the batteries, which provide good storage capacity that can be effectively integrated

  17. 495 Tech Way NW Atlanta, GA 30318

    E-Print Network [OSTI]

    Li, Mo

    495 Tech Way NW Atlanta, GA 30318 404.385.0384 comments@energy.gatech.edu Copyright 2014 · Georgia concerns, low-cost, clean, secure energy solutions will be necessary to address our global energy needs and sustain our way of life. Georgia Tech Energy Innovations The Strategic Energy Institute's scientists

  18. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  19. Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

    E-Print Network [OSTI]

    it was discovered by Davydov et al.1 and con- firmed by independent studies2,3 that its band gap is small, EG InN =0 The conduction band offset at GaN/AlN interface was estimated as EQW=0.7 EG AlN -EG GaN =1918 meV. The nanoN/GaN/AlN QW. The depth of the nanogroove is calculated as E0=0.8 EG GaN -EG InxGa1-xN . The band gap of InxGa1

  20. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    epitaxial growth of indium gallium nitride (InGaN) layers capable of producing high-efficiency LEDs when combined with chip-on-board packaging techniques. The proposed...

  1. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lüth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8?×?10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  2. 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly ...

  3. Emission and Excitation Spectra of ZnO:Ga and ZnO:Ga,N Ceramics

    E-Print Network [OSTI]

    P. A. Rodnyi; I. V. Khodyuk; E. I. Gorokhova; S. B. Mikhrin; P. Dorenbos

    2010-09-07

    The spectral characteristics of ZnO:Ga and ZnO:Ga,N ceramics prepared by uniaxial hot pressing have been investigated. At room temperature, the edge (exciton) band at 3.12 eV dominates in the luminescence spectra of ZnO:Ga, while a wide luminescence band at 2.37 eV, which is likely to be due to zinc vacancies, is observed in the spectra of ZnO:Ga,N. Upon heating, the edge band maximum shifts to lower energies and the bandwidth increases. The extrapolated position of the edge-band maximum at zero temperature, Em(0) = 3.367 +/- 0.005 eV, is in agreement with the data for thin zinc oxide films. The luminescence excitation spectra in the range from 3 to 6.5 eV are reported and the mechanism of energy transfer to excitons and luminescence centers is considered.

  4. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Giddings, A. D.; Prosa, T. J.; Larson, D. J. [CAMECA Instruments, Inc., 5500 Nobel Drive, Madison, Wisconsin 53711 (United States); Mano, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  5. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgül Okur; Akdemir, Hande Günay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  6. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  7. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  8. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Haj?asz, M., E-mail: m.hajlasz@m2i.nl [Materials innovation institute (M2i), Mekelweg 2, 2628 CD, Delft (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); Gravesteijn, D. J. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Rietveld, F. J. R. [NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen (Netherlands); Schmitz, J. [MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands)

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  9. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  10. Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes

    E-Print Network [OSTI]

    Cornelius S. Bausch; Aune Koitmäe; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

    2013-05-06

    We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

  11. Environmental Baseline Survey Report for the Title Transfer of Land Parcel ED-4 at the East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    SAIC

    2008-05-01

    This environmental baseline survey (EBS) report documents the baseline environmental conditions of a land parcel referred to as 'ED-4' (ED-4) at the U. S. Department of Energy's (DOE's) East Tennessee Technology Park (ETTP). DOE is proposing to transfer the title of this land to the Heritage Center, LLC. Parcel ED-4 is a land parcel that consists of two noncontiguous areas comprising a total of approximately 18 acres located east of the ETTP. The western tract of ED-4 encompasses approximately 8.5 acres in the northeastern quadrant of the intersection of Boulevard Road and Highway 58. The eastern tract encompasses an area of approximately 9.5 acres in the northwestern quadrant of the intersection of Blair Road and Highway 58 (the Oak Ridge Turnpike). Aerial photographs and site maps from throughout the history of the ETTP, going back to its initial development in the 1940s as the Oak Ridge Gaseous Diffusion Plant (ORGDP), indicate that this area has been undeveloped woodland with the exception of three support facilities for workers constructing the ORGDP since federal acquisition in 1943. These three support facilities, which were located in the western tract of ED-4, included a recreation hall, the Town Hall Camp Operations Building, and the Property Warehouse. A railroad spur also formerly occupied a portion of Parcel ED-4. These former facilities only occupied approximately 5 percent of the total area of Parcel ED-4. This report provides supporting information for the transfer of this government-owned property at ETTP to a non-federal entity. This EBS is based upon the requirements of Sect. 120(h) of the Comprehensive Environmental Response, Compensation, and Liability Act of 1980 (CERCLA). In order to support a Clean Parcel Determination (CPD) in accordance with CERCLA Sect. 120(h)(4)(d), groundwater and sediment samples were collected within, and adjacent to, the Parcel ED-4 study area. The potential for DOE to make a CPD for ED-4 is further supported by a No Further Investigation (NFI) determination made on land that adjoins ED-4 to the east (DOE 1997a) and to the south (DOE 1997b).

  12. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  13. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  14. Accurate characterization and improvement of GaAs microstrip attenuation 

    E-Print Network [OSTI]

    Carroll, James Mason

    1992-01-01

    Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

  15. Certification report for final closure of Y-12 Centralized Sanitary Landfill II, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    1995-12-31

    This report represents the Geotek Engineering Company, Inc., (Geotek) record of activities to support certification of final closure Of the subject Y-12 Centralized Sanitary Landfill II. Ex as noted herein, final closure of the landfill was completed in accordance with the Y-12 Centralized Sanitary Landfill 11 Closure/Post Closure Plan, Revision 2, submitted by the US Department of Energy (DOE) to the Tennessee Department of Environment and Conservation (TDEC) on April 14, 1992, and approved by TDEC on May 27, 1994 (the ``Closure Plan``). minor modification to the Closure Plan allowing partial closure of the Y-12 Centralized Sanitary Landfill II (Phase 1) was approved by TDEC on August 3, 1994. The Phase I portion of the closure for the subject landfill was completed on March 25, 1995. A closure certification report entitled Certification Report for Partial Closure of Y-12 Centralized Sanitary Landfill II was submitted to Lockheed Martin Energy Systems, Inc., (LMES) on March 28, 1995. The final closure represents the completion of the closure activities for the entire Y-12 Centralized Sanitary Landfill II Site. The contents of this report and accompanying certification are based on observations by Geotek engineers and geologists during closure activities and on review of reports, records, laboratory test results, and other information furnished to Geotek by LMES.

  16. Fiscal year 1995 well plugging and abandonment program Y-12 Plant, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    1995-09-01

    This report is a synopsis of the progress of the well plugging and abandonment program at the Y-12 Plant, Oak Ridge, Tennessee, from September 1994 through August 1995. A total of 67 wells, piezometers, and borings were plugged and abandoned during the period of time covered in this report. All wells and borings were plugged and abandoned if (1) its construction did not meet current standards (substandard construction); (2) it was irreparably damaged or had deteriorated beyond practical repair; (3) its location interfered with or otherwise impeded site operations, construction, or closure activities; or (4) special circumstances existed as defined on a case-by-case basis and approved by the Y-12 Plant Groundwater Protection Program (GWPP) Manager. This summary report contains: general geologic setting of the Y-12 Plant and vicinity; discussion of well plugging and abandonment methods, grouting procedures, and waste management practices (a Waste Management Plan for Drilling Activities is included in Appendix C); summaries of plugging and abandonment activities at each site; and quality assurance/quality control (QA/QC) and health and safety protocols used during the FY 1995 Plugging and Abandonment Program.

  17. Environmental monitoring plan for Waste Area Grouping 6 at Oak Ridge National Laboratory, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    1995-09-01

    This document presents an Environmental Monitoring Plan (EMP) for Waste Area Grouping (WAG 6) at Oak Ridge National Laboratory (ORNL). This document updates a draft monitoring plan developed in 1993. The draft plan was never finalized awaiting resolution of the mechanisms for addressing RCRA concerns at a site where the CERCLA process resulted in a decision to defer action, i.e., postpone closure indefinitely. Over the past two years the Tennessee Department of Environment and Conservation (TDEC), US Department of Energy (DOE), and US Environmental Protection Agency (EPA) Region IV, have agreed that RCRA authority at the site will be maintained through a post- closure permit; ``closure`` in this case referring to deferred action. Both a Revised Closure Plan (DOE 1995a) and a Post-Closure Permit Application (DOE 1995b) have been developed to document this agreement; relevant portions of the EMP will be included in the RCRA Post-Closure Permit Application. As the RCRA issues were being negotiated, DOE initiated monitoring at WAG 6. The purpose of the monitoring activities was to (1) continue to comply with RCRA groundwater quality assessment requirements, (2) install new monitoring equipment, and (3) establish the baseline conditions at WAG 6 against which changes in contaminant releases could be measured. Baseline monitoring is scheduled to end September 30, 1995. Activities that have taken place over the past two years are summarized in this document.

  18. Lease of Parcel ED-1 of the Oak Ridge Reservation by the East Tennessee Economic Council

    SciTech Connect (OSTI)

    1996-04-01

    The US Department of Energy (DOE) has completed an environmental assessment (DOE/EA-1113) for the proposed lease of 957.16 acres of the Oak Ridge Reservation (ORR) to the East Tennessee Economic Council (ETEC), a non-profit community organization, for a period of 10 years, with an option for renewal. ETEC proposes to develop an industrial park on the leased site to provide employment opportunities for DOE and contractor employees affected by decreased federal funding. Based on the results of the analysis reported in the EA and implementation of mitigation measures defined in this Finding of No Significant Impact (FONSI), DOE has determined that the proposed action is not a major Federal action that would significantly affect the quality of the human environment within the context of the National Environmental Policy Act of 1969 (NEPA). Therefore, preparation of an environmental impact statement (EIS) is not necessary, and DOE is issuing this mitigated FONSI. DOE will implement a Mitigation Action Plan for this project and provide annual reports on mitigation and monitoring.

  19. Underground storage tank management plan, Oak Ridge Y-12 Plant, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    1997-09-01

    The Underground Storage Tank (UST) Program at the Oak Ridge Y-12 Plant was established to locate UST systems at the facility and to ensure that all operating UST systems are free of leaks. UST systems have been removed or upgraded in accordance with Tennessee Department of Environment and Conservation (TDEC) regulations and guidance. With the closure of a significant portion of the USTs, the continuing mission of the UST Management Program is to manage the remaining active UST systems and continue corrective actions in a safe regulatory compliant manner. This Program outlines the compliance issues that must be addressed, reviews the current UST inventory and compliance approach, and presents the status and planned activities associated with each UST system. The UST Program provides guidance for implementing TDEC regulations and guidelines for petroleum UST systems. The plan is divided into three major sections: (1) regulatory requirements, (2) active UST sites, and (3) out-of-service UST sites. These sections describe in detail the applicable regulatory drivers, the UST sites addressed under the Program, and the procedures and guidance for compliance.

  20. Report of the Advanced Neutron Source (ANS) safety workshop, Knoxville, Tennessee, October 25--26, 1988

    SciTech Connect (OSTI)

    Buchanan, J.R.; Dumont, J.N.; Kendrick, C.M.; Row, T.H.; Thompson, P.B.; West, C.D.; Marchaterre, J.F.; Muhlheim, M.D.; McBee, M.R.

    1988-12-01

    On October 25--26, 1988, about 60 people took part in an Advanced Neutron Source (ANS) Safety Workshop, organized in cooperation with the Oak Ridge Operations (ORO) Office of the Department of Energy (DOE) and held in Knoxville, Tennessee. After a plenary session at which ANS Project staff presented status reports on the ANS design, research and development (R and D), and safety analysis efforts, the workshop broke into three working groups, each covering a different topic: Environmental and Waste Management, Applicable Regulatory Safety Criteria and Goals, and Reactor Concepts. Each group was asked to review the Project's approach to safety-related issues and to provide guidance on future reactor safety needs or directions for the Project. With the help of able chairmen, assisted by reporters and secretarial support, the working groups were extremely successful. Draft reports from each group were prepared before the workshop closed, and the major findings of each group were presented for review and discussion by the entire workshop attendance. This report contains the final version of the group reports, incorporating the results of the overall review by all the workshop participants.

  1. Routine environmental audit of the K-25 Site, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Not Available

    1994-02-01

    This report documents the results of the Routine Environmental Audit of the K-25 Site in Oak Ridge, Tennessee, conducted February 14 through February 25, 1994, by the US Department of Energy`s (DOE`s) Office of Environmental Audit (EH-24) located within the Office of Environment, Safety and Health (EH). The Routine Environmental Audit for the K-25 site was conducted as an environmental management assessment, supported through reviews of the Waste Management Program and the Decontamination and Decommissioning Program. The assessment was conducted jointly with, and built upon, the results provided by the ``DOE Oak Ridge Operations Office Environment, Safety, health and Quality Assurance Appraisal at the K-25 Site.`` DOE 5482.1B, ``Environment, Safety and Health Appraisal Program,`` established the mission of EH-24 to provide comprehensive, independent oversight of Department-wide environmental programs on behalf of the Secretary of Energy. The purpose of this assessment is to provide the Secretary of Energy and senior DOE managers with concise independent information as part of DOE`s continuing effort to improve environmental program performance. The ultimate goal of EH-24 is enhancement of environmental protection and the minimization of risk to public health and the environment. The routine environmental audit is one method by which EH-24 accomplishes its mission, utilizing systematic and periodic evaluations of the Department`s environmental programs within line organizations.

  2. Site descriptions of environmental restoration units at the Oak Ridge K-25 Site, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Goddard, P.L.; Legeay, A.J.; Pesce, D.S.; Stanley, A.M.

    1995-11-01

    This report, Site Descriptions of Environmental Restoration Units at the Oak Ridge K-25 Site, Oak Ridge, Tennessee, is being prepared to assimilate information on sites included in the Environmental Restoration (ER) Program of the K-25 Site, one of three major installations on the Oak Ridge Reservation (ORR) built during World War III as part of the Manhattan Project. The information included in this report will be used to establish program priorities so that resources allotted to the K-25 ER Program can be best used to decrease any risk to humans or the environment, and to determine the sequence in which any remedial activities should be conducted. This document will be updated periodically in both paper and Internet versions. Units within this report are described in individual data sheets arranged alphanumerically. Each data sheet includes entries on project status, unit location, dimensions and capacity, dates operated, present function, lifecycle operation, waste characteristics, site status, media of concern, comments, and references. Each data sheet is accompanied by a photograph of the unit, and each unit is located on one of 13 area maps. These areas, along with the sub-area, unit, and sub-unit breakdowns within them, are outlined in Appendix A. Appendix B is a summary of information on remote aerial sensing and its applicability to the ER program.

  3. Characterization plan for the Oak Ridge National Laboratory Area-Wide Groundwater Program, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Not Available

    1994-08-01

    This characterization plan has been developed as part of the U.S. Department of Energy`s (DOE`s) investigation of the Groundwater Operable Unit (GWOU) at Oak Ridge National Laboratory (ORNL) located near Oak Ridge, Tennessee. The first iteration of the characterization plan is intended to serve as a strategy document to guide subsequent GWOU remedial investigations. The plan provides a rationale and organization for groundwater data acquisition, monitoring, and remedial actions to be performed during implementation of environmental restoration activities associated with the ORNL GWOU. It is important to note that the characterization plan for the ORNL GWOU is not a prototypical work plan. As such, remedial investigations will be conducted using annual work plans to manage the work activities, and task reports will be used to document the results of the investigations. Sampling and analysis results will be compiled and reported annually with a review of data relative to risk (screening level risk assessment review) for groundwater. This characterization plan outlines the overall strategy for the remedial investigations and defines tasks that are to be conducted during the initial phase of investigation. This plan is presented with the understanding that more specific addenda to the plan will follow.

  4. Quality assurance plan for Waste Area Grouping 6 at Oak Ridge National Laboratory, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Not Available

    1994-01-01

    This Quality Assurance Plan (QAP) is concerned with design and construction (Sect. 2) and characterization and monitoring (Sect. 3). The basis for Sect. 2 is the Quality Assurance Plan for the Design and Construction of Waste Area Grouping 6 Closure at Oak Ridge National Laboratory, Oak Ridge, Tennessee, and the basis for Sect. 3 is the Environmental Restoration Quality Program Plan. Combining the two areas into one plan gives a single, overall document that explains the requirements and from which the individual QAPs and quality assurance project plans can be written. The Waste Area Grouping (WAG) 6 QAP establishes the procedures and requirements to be implemented for control of quality-related activities for the WAG 6 project. Quality Assurance (QA) activities are subject to requirements detailed in the Martin Marietta Energy Systems, Inc. (Energy Systems), QA Program and the Environmental Restoration (ER) QA Program, as well as to other quality requirements. These activities may be performed by Energy Systems organizations, subcontractors to Energy Systems, and architect-engineer (A-E) under prime contract to the US Department of Energy (DOE), or a construction manager under prime contract to DOE. This plan specifies the overall Energy Systems quality requirements for the project. The WAG 6 QAP will be supplemented by subproject QAPs that will identify additional requirements pertaining to each subproject.

  5. Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors

    E-Print Network [OSTI]

    Chung, Jinwook W. (Jinwook Will)

    2008-01-01

    In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

  6. Environmental Baseline Survey Report for the Title Transfer of the K-792 Switchyard Complex at the East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    SAIC

    2009-12-01

    This environmental baseline survey (EBS) documents the baseline environmental conditions of the U. S. Department of Energy's (DOE's) K-792 Switchyard Complex, which includes the former K-792 Switchyard, the K-79 1-B building, the K-796-A building, and the K-792 Northern Expansion Area located in the northwestern portion of the East Tennessee Technology Park (ETTP). The total area of the property is approximately 19.91 acres. DOE is proposing to transfer the title of this land area and buildings to the Heritage Center, LLC (Heritage Center), a subsidiary corporation of the Community Reuse Organization of East Tennessee (CROET). This report provides supporting information for the transfer of this government-owned facility at ETTP to a non-federal entity. The area proposed for title transfer includes the former K-792 Switchyard, the K-792 Northern Expansion Area, Bldg. K-791-B, Bldg. K-796-A, and the underlying property known as the underlying fee. Located within the K-792 Switchyard footprint but not included in the transfer are Bldg. K-131 0-MP and Bldg. K- 131 0-MQ, two buildings owned by a private company that leases space in the northern portion of the Switchyard. The transfer footprint is bounded by Perimeter Road to the north and west, the parking area for Portal 8 to the south, and primarily the former K-792 Powerhouse Complex and Avenue 'U' North to the east; however, the eastern boundary along the Northern Expansion area has no physical features associated with it. Zone 2 remedial action objectives were developed by the DVS to support the future use of ETTP as a mixed-use commercial and industrial park. Therefore, remediation criteria were designed for the protection of the future industrial worker under the assumption the worker normally would not have the potential for exposure to soils at depths below 10 ft below ground surface (bgs). Accordingly, land use controls (LUCs) have been established to restrict disturbance of soils below 10 ft deep and to limit future land use to industriallcornmercial activities. Where the need for LUCs below 10 ft bgs is not warranted, this is so stated and explained. Once all actions associated with the DVS for Zone 1 and Zone 2 are completed and the data support it, there will be a re-evaluation with EPA and TDEC for the restriction on excavation below 10 ft. The DVS process and the preparation of this report included visual and physical inspections of the property and adjacent properties, a detailed records search, sampling and analysis of soils, radiological walkover surveys, and a risk evaluation. Resources evaluated as part of the records search included Federal Government records, title documents, aerial photographs that may reflect prior uses, and interviews with current and former employees 1 involved in the operations on the real property to identify any areas on the property where hazardous substances and petroleum products, or their derivatives, and acutely hazardous wastes were stored for one year or more, known to have been released, or disposed of. In addition, radiological surveys of Bldgs. K-791-B and K-796-A were conducted to assess the buildings radiological condition. Soil vapor sampling and polychlorinated biphenyl (PCB) swipe sampling also were conducted within the buildings. Based on the U. S. Department of Energy's (DOE's) review of the existing information, including discussions and interviews referenced herein, and evaluation of the data gathered in preparation of the environmental baseline survey (EBS) for the K-792 Switchyard Complex, DOE recommends the following: Due to the uncertainty associated with the nature of the on-site groundwater and the need to evaluate and possibly address groundwater in the future, DOE recommends that the transfer of the K-792 Switchyard Complex be achieved by a covenant deferral per the Comprehensive Environmental Response, Compensation, and Liability Act of 1980 (CERCLA) Sect. 120(h)(3)(c). Land use restrictions associated with the covenant deferral are described.

  7. A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+

    E-Print Network [OSTI]

    McKittrick, Joanna

    A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

  8. Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers

    E-Print Network [OSTI]

    Jalali. Bahram

    Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico optical, electrical, and spectral response characteristics of three-stack InAs/GaAs quantum dot solar

  9. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  10. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  11. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    solar cells are triple-junction concentrator devices, with each junction efficiently col- lecting subcell in a multijunction de- vice. GaAs0.66 P0.34 single-junction solar cells with Eg = 1.83 eV were56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar

  12. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  13. EIS-0305: Treating Transuranic (TRU)/Alpha Low-Level at the Oak Ridge National Laboratory, Oak Ridge, Tennessee

    Broader source: Energy.gov [DOE]

    This EIS evaluates DOE's proposal to construct, operate, and decontaminate/decommission a Transuranic (TRU) Waste Treatment Facility in Oak Ridge, Tennessee. The four waste types that would be treated at the proposed facility would be remote-handled TRU mixed waste sludge, liquid low-level waste associated with the sludge, contact-handled TRU/alpha low-level waste solids, and remote-handled TRU/alpha low-level waste solids. The mixed waste sludge and some of the solid waste contain metals regulated under the Resource Conservation and Recovery Act and may be classified as mixed waste.

  14. Bear Creek Valley Floodplain Hot Spot Removal Action Project Plan, Oak Ridge Y-12 Plant, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    NONE

    1998-01-01

    The Bear Creek Valley Floodplain Hot Spot Removal Action Project Plan, Oak Ridge Y-12 Plant, Oak Ridge, Tennessee (Y/ER-301) was prepared (1) to safely, cost-effectively, and efficiently evaluate the environmental impact of solid material in the two debris areas in the context of industrial land uses (as defined in the Bear Creek Valley Feasibility Study) to support the Engineering Evaluation/Cost Assessment and (2) to evaluate, define, and implement the actions to mitigate these impacts. This work was performed under Work Breakdown Structure 1.x.01.20.01.08.

  15. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  16. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arès, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  17. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  18. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  19. Environmental Cleanup of the East Tennessee Technology Park Year One - Execution with Certainty SM - 13120

    SciTech Connect (OSTI)

    Schubert, A.L. [URS - CH2M Oak Ridge LLC, P.O. Box 4699, Oak Ridge, TN 37831-7294 (United States)] [URS - CH2M Oak Ridge LLC, P.O. Box 4699, Oak Ridge, TN 37831-7294 (United States)

    2013-07-01

    On August 1, 2011, URS - CH2M Oak Ridge LLC (UCOR) began its five-year, $1.4 billion cleanup of the East Tennessee Technology Park (ETTP), located on the U.S. Department of Energy's (DOE) Oak Ridge Reservation in Tennessee. UCOR will close out cleanup operations that began in 1998 under a previous contract. When the Contract Base scope of work [1] is completed in 2016, the K-25 gaseous diffusion building will have been demolished and all waste dispositioned, demolition will have started on the K-27 gaseous diffusion building, all contact-handled and remote-handled transuranic waste in inventory (approximately 500 cubic meters) will have been transferred to the Transuranic Waste Processing Center, previously designated 'No-Path-To-Disposition Waste' will have been dispositioned to the extent possible, and UCOR will have managed DOE Office of Environmental Management (EM)- owned facilities at ETTP, Oak Ridge National Laboratory (ORNL), and the Y-12 National Security Complex in a safe and cost-effective manner. Since assuming its responsibilities as the ETTP cleanup contractor, UCOR has completed its life-cycle Performance Measurement Baseline; received its Earned Value Management System (EVMS) certification; advanced the deactivation and demolition (D and D) of the K-25 gaseous diffusion building; recovered and completed the Tank W-1A and K-1070-B Burial Ground remediation projects; characterized, packaged, and shipped contact-handled transuranic waste to the Transuranic Waste Processing Center; disposed of more than 90,000 cubic yards of cleanup waste while managing the Environmental Management Waste Management Facility (EMWMF); and provided operations, surveillance, and maintenance activities at DOE EM facilities at ETTP, ORNL, and the Y-12 National Security Complex. Project performance as of December 31, 2012 has been excellent: - Cost Performance Index - 1.06; - Schedule Performance Index - 1.02. At the same time, since safety is the foundation of all cleanup work, UCOR's safety record goes hand in hand with its excellent project performance. Through calendar year 2012, UCOR's recordable injury rate was 0.33, and the company has worked close to 4 million hours without a lost work day injury. UCOR's safety record is one of the best in the DOE EM Complex. This performance was due, in large part, to the people and processes URS and CH2M HILL, the parent companies of UCOR, brought to the project. Key approaches included: - Selected and deployed experienced staff in key leadership positions throughout the organization; - Approached 'Transition' as the 'true' beginning of the cleanup project - kicking off a number of project initiatives such as Partnering, PMB development, D and D Plan execution, etc. - Established a project baseline for performance measurement and obtained EVMS certification in record time; - Determined material differences and changed conditions that warranted contract change - then quickly addressed these changes with the DOE client; - Aligned the project and the contract within one year - also done in record time; - Implemented Safety Trained Supervisor and Safety Conscious Work Environment Programs, and kicked off the pursuit of certification under DOE's Voluntary Protection Program. (authors)

  20. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  1. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  2. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  3. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  4. Survey of protected vascular plants on the Oak Ridge Reservation, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Awl, D.J.; Pounds, L.R.; Rosensteel, B.A.; King, A.L.; Hamlett, P.A.

    1996-06-01

    Vascular plant surveys were initiated during fiscal year 1992 by the environmentally sensitive areas program to determine the baseline condition of threatened and endangered (T&E) vascular plant species on the Oak Ridge Reservation (ORR). T&E species receive protection under federal and state regulations. In addition, the National Environmental Policy Act (NEPA) requires that federally-funded projects avoid or mitigate impacts to listed species. T&E plant species found on or near the U.S. Department of Energy`s (DOE) Oak Ridge Reservation (ORR) are identified. Twenty-eight species identified on the ORR are listed by the Tennessee Department of Environment and Conservation as either endangered, threatened, or of special concern. Four of these have been under review by the U.S. Fish and Wildlife Service for possible listing (listed in the formerly-used C2 candidate category). Additional species listed by the state occur near and may be present on the ORR. A range of habitats support the rare taxa on the ORR: river bluffs, sinkholes, calcareous barrens, wetlands, utility corridors, and forests. The list of T&E plant species and their locations on the ORR should be considered provisional because the entire ORR has not been surveyed, and state and federal status of all species continues to be updated. The purpose of this document is to present information on the listed T&E plant species currently known to occur on the ORR as well as listed species potentially occurring on the ORR based on geographic range and habitat availability. For the purpose of this report, {open_quotes}T&E species{close_quotes} include all federal- and state-listed species, including candidates for listing, and species of special concern. Consideration of T&E plant habitats is an important component of resource management and land-use planning; protection of rare species in their natural habitat is the best method of ensuring their long-term survival.

  5. Tennessee Oversight Agreement annual report, May 13, 1993--May 12, 1994

    SciTech Connect (OSTI)

    NONE

    1994-09-01

    This report discusses the activities of the Division of DOE Oversight in the areas of coordination with other State Agencies with regard to environmental restoration, corrective action, and waste management activities on the Oak Ridge Reservation; and the Division`s efforts to keep the public informed of those DOE activities that may impact their health and the environment. This report includes the status of the Division`s efforts in implementing the Tennessee Oversight Agreement (TOA). Each Program Section provides information concerning the status of its activities. The Administrative Section has been instrumental in achieving access to the ORR without prior notification to DOE and in obtaining documents and environmental, waste management, safety, and health information in a timely manner. The Environmental Restoration Program has provided in-depth document reviews and on-site coordination and monitoring of field activities required under the Federal Facility Agreement. Most notable of the activities are the investigations and planned remediation of the Lower East Fork Poplar Creek and the Watts Bar Reservoir. The Waste Management Program has audited DOE`s compliance with air, water, solid, hazardous, and mixed waste storage, treatment, and disposal regulations. Effort was focused on all three DOE Facilities on the ORR. The final portion of this report discusses the Division`s findings and recommendations. Most significant of these issues is the Division`s request to be an active participant in DOE`s prioritization of its TOA commitments. Other issues discussed include long term storage of radioactive waste and the use of environmental restoration funds. A discussion of those findings and recommendations provided in last year`s annual report and addressed by DOE are included in this report as well. All documents, logs, files, etc. supporting this report are available for review during routine business hours at the Division`s office.

  6. Cooling season performance of an earth-sheltered office/dormitory building in Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Christian, J.E.

    1984-07-01

    Detailed hourly measurements taken in and around an underground office-dormitory building for two summers document energy savings; whole building-component interface problems; and specific cooling contributions from earth contact, interior thermal mass, and an economizer. The Joint Institute Dormitory (JID) saves about 30% compared with well-built above-grade buildings in a climate typical of Oak Ridge, Tennessee, and has the potential to save as much as 50%. The detailed measurements, which include extensive thermal comfort data, indicate that at least 90% of the occupants are comfortable all of the time. The thermal performance measurements and analysis determine that the peak cooling requirement of this building is 50% less than that of well-built above-grade structures, permitting a cost savings on installed cooling capacity. The dominant building components contributing to the good thermal performance are the structural thermal mass, the earth-covered roof, and the earth contact provided by the bermed walls and slab floor. The 372-m/sup 2/ (4000 gross ft/sup 2/) building used about $300 (at 5.7 cents/kWh) to cool and ventilate from May through September. Eliminating a number of building design and construction anomalies could improve the whole-building performance and reduce the seasonal cooling cost another $85. Close examination of the thermal performance of this building revealed that a very efficient heat pump and thermally sound envelope do not necessarily produce otpimum performance without careful attention given to component interface details. 8 references, 24 figures, 12 tables.

  7. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  8. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  9. GaN based nanorods for solid state lighting

    SciTech Connect (OSTI)

    Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

    2012-04-01

    In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

  10. A Dendroecological Evaluation of the Effects of Coal Ash on Tree Growth, Kingston Fossil Plant, Harriman, Tennessee, U.S.A.

    E-Print Network [OSTI]

    Grissino-Mayer, Henri D.

    A Dendroecological Evaluation of the Effects of Coal Ash on Tree Growth, Kingston Fossil Plant of fly ash at the Kingston Fossil Plant, Harriman, Tennessee collapsed, releasing 4,434,400 cubic meters of coal ash into the Clinch and Emory Rivers, impacting aquatic life as well as terrestrial flora

  11. Mitigation Action Plan: Lease of Parcel ED-1 of the Oak Ridge Reservation by the East Tennessee Economic Council

    SciTech Connect (OSTI)

    1996-04-01

    In April 1996, the U.S. Department of Energy (DOE) completed an environmental assessment (EA) (DOE/EA-1113) for the proposed lease of 957-16 acres (Parcel ED-1) of the Oak Ridge (Tennessee) Reservation (ORR) by the East Tennessee Economic Council (ETEC) for industrial development. DOE plans to issue a Finding of No Significant Impact (FONSI) for the proposed action, conditional upon the implementation of mitigation and monitoring to protect environmental resources. According to DOE`s National Environmental Policy Act (NEPA) regulations (10 CFR 1021.322), a FONSI shall include {open_quotes}any commitments to mitigations that are essential to render the impacts of the proposed action not significant, beyond those mitigations that are integral elements of the proposed action, and a reference to the Mitigation Action Plan prepared under 10 CTR 1021.331{close_quotes}. Terms of the lease offer DOE the option of terminating the lease with ETEC should the lessee and/or sublessees fail to implement the mitigation defined in the FONSI.

  12. Site characterization plan for groundwater in Waste Area Grouping 1 at Oak Ridge National Laboratory, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Lee, R.R.; Curtis, A.H.; Houlberg, L.M.; Purucker, S.T.; Singer, M.L.; Tardiff, M.F.; Wolf, D.A.

    1994-07-01

    The Waste Area Grouping (WAG) 1 Groundwater Operable Unit (OU) at Oak Ridge National Laboratory (ORNL) in Oak Ridge, Tennessee, is undergoing a site characterization to identify environmental contamination that may be present. This document, Site Characterization Report for Groundwater in Waste Area Grouping I at Oak Ridge National Laboratory, Oak Ridge, Tennessee, identifies areas of concern with respect to WAG 1 groundwater and presents the rationale, justification, and objectives for conducting this continuing site characterization. This report summarizes the operations that have taken place at each of the areas of concern in WAG 1, summarizes previous characterization studies that have been performed, presents interpretations of previously collected data and information, identifies contaminants of concern, and presents an action plan for further site investigations and early actions that will lead to identification of contaminant sources, their major groundwater pathways, and reduced off-site migration of contaminated groundwater to surface water. Site characterization Activities performed to date at WAG I have indicated that groundwater contamination, principally radiological contamination, is widespread. An extensive network of underground pipelines and utilities have contributed to the dispersal of contaminants to an unknown extent. The general absence of radiological contamination in surface water at the perimeter of WAG 1 is attributed to the presence of pipelines and underground waste storage tank sumps and dry wells distributed throughout WAG 1 which remove more than about 40 million gal of contaminated groundwater per year.

  13. Evaluation of Invertebrate Bioaccumulation of Fly Ash Contaminants in the Emory, Clinch, and Tennessee Rivers, 2009 - 2010

    SciTech Connect (OSTI)

    Smith, John G

    2012-05-01

    This report provides a summary of results from studies on invertebrate bioaccumulation of potential contaminants associated with a major fly ash spill into the Emory River following the failure of a dike at the Tennessee Valley Authority's (TVA) Kingston Fossil Plant (KIF) in Kingston, Tennessee, in late December 2008. Data included in this report cover samples collected in calendar years 2009 and 2010. Samples collected from most sites in 2009 were processed by two different laboratories using different approved U.S. Environmental Protection Agency (EPA) analytical methods: ALS Laboratory Group in Ft. Collins, CO, processed sampling using EPA method 6010 (but method 6020 for uranium and SW7470 for mercury), and PACE Analytical in Minneapolis, MN, used EPA method 6020. A preliminary evaluation of results from both laboratories indicated that some differences exited in measured concentrations of several elements, either because of specific differences of the two methods or inter-laboratory differences. While concentration differences between the laboratories were noted for many elements, spatial trends depicted from the results of both methods appeared to be similar. However, because samples collected in the future will be analyzed by Method 6020, only the results from PACE were included in this report to reduce data variation potentially associated with inter-laboratory and analytical method differences.

  14. GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a

    E-Print Network [OSTI]

    Atwater, Harry

    GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C, crack-free GaInP/GaAs double junction solar cells were grown by metal organic chemical vapor deposition with the world record efficiency is a metamorphic triple junction GaInP/GaAs/Ge cell.6 Alternatively, wafer

  15. Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    -emitting diodes (LEDs) are considered the new generation lighting sources due to their advantages in power Society of America OCIS codes: 230.3670, 230.5590, 160.6000. Nitride-based high-power light devoted to the development of high-brightness GaN-based LEDs [3­5]. Lateral hole spreading is one

  16. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  17. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  18. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  19. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  20. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  1. Demonstration of a semipolar (10(1)over-bar(3)over-bar) InGaN/GaN green light emitting diode

    E-Print Network [OSTI]

    2005-01-01

    InGaN / GaN green light emitting diode R. Sharma, a? P. M.green ??525 nm? light emitting diode ?LED?. The fabricated

  2. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19?}m{sup ?2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  3. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  4. High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

    SciTech Connect (OSTI)

    Chang, Chiao-Yun; Li, Hen; Lu, Tien-Chang, E-mail: timtclu@mail.nctu.edu.tw [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300 (China)

    2014-03-03

    In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20?mA and a 27.0% efficiency droop at 100?mA (corresponding to a current density of 69?A/cm{sup 2}), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs.

  5. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  6. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  7. Wind Regimes in Complex Terrain of the Great Valley of Eastern Tennessee

    SciTech Connect (OSTI)

    Birdwell, Kevin R [ORNL

    2011-05-01

    This research was designed to provide an understanding of physical wind mechanisms within the complex terrain of the Great Valley of Eastern Tennessee to assess the impacts of regional air flow with regard to synoptic and mesoscale weather changes, wind direction shifts, and air quality. Meteorological data from 2008 2009 were analyzed from 13 meteorological sites along with associated upper level data. Up to 15 ancillary sites were used for reference. Two-step complete linkage and K-means cluster analyses, synoptic weather studies, and ambient meteorological comparisons were performed to generate hourly wind classifications. These wind regimes revealed seasonal variations of underlying physical wind mechanisms (forced channeled, vertically coupled, pressure-driven, and thermally-driven winds). Synoptic and ambient meteorological analysis (mixing depth, pressure gradient, pressure gradient ratio, atmospheric and surface stability) suggested up to 93% accuracy for the clustered results. Probabilistic prediction schemes of wind flow and wind class change were developed through characterization of flow change data and wind class succession. Data analysis revealed that wind flow in the Great Valley was dominated by forced channeled winds (45 67%) and vertically coupled flow (22 38%). Down-valley pressure-driven and thermally-driven winds also played significant roles (0 17% and 2 20%, respectively), usually accompanied by convergent wind patterns (15 20%) and large wind direction shifts, especially in the Central/Upper Great Valley. The behavior of most wind regimes was associated with detectable pressure differences between the Lower and Upper Great Valley. Mixing depth and synoptic pressure gradients were significant contributors to wind pattern behavior. Up to 15 wind classes and 10 sub-classes were identified in the Central Great Valley with 67 joined classes for the Great Valley at-large. Two-thirds of Great Valley at-large flow was defined by 12 classes. Winds flowed on-axis only 40% of the time. The Great Smoky Mountains helped create down-valley pressure-driven winds, downslope mountain breezes, and divergent air flow. The Cumberland Mountains and Plateau were associated with wind speed reductions in the Central Great Valley, Emory Gap Flow, weak thermally-driven winds, and northwesterly down sloping. Ridge-and-valley terrain enhanced wind direction reversals, pressure-driven winds, as well as locally and regionally produced thermally-driven flow.

  8. Federal Facility Agreement Annual Progress Report for Fiscal Year 1999 Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Bechtel Jacobs Company LLC

    2000-01-01

    The U.S. Department of Energy-Oak Ridge Operations (DOE-ORO) EM Program adopted a watershed approach for performing Remedial Investigations (RIs) and characterizations for ORR because it is an effective system for determining the best methods for protecting and restoring aquatic ecosystems and protecting human health. The basic concept is that water quality and ecosystem problems are best solved at the watershed level rather than at the individual water-body or discharger level. The watershed approach requires consideration of all environmental concerns, including needs to protect public health, critical habitats such as wetlands, biological integrity, and surface and ground waters. The watershed approach provides an improved basis for management decisions concerning contaminant sources and containment. It allows more direct focus by stakeholders on achieving ecological goals and water quality standards rather than a measurement of program activities based on numbers of permits or samples. The watershed approach allows better management strategies for investigations, therefore maximizing the utilization of scarce resources. Feasibility studies (FSs) evaluate various alternatives in terms of environmental standards, the protection of human health and the environment, and the costs of implementation to find the optimum solution among them. Society has to decide how much it is willing to spend to meet the standards and to be protective. Conducting FSs is the process of trading off those criteria to pick that optimum point that society wants to achieve. Performing this analysis at the watershed scale allows those trade-offs to be made meaningfully. In addition, a Land Use Control Assurance Plan for the ORR was prepared to identify the strategy for assuring the long-term effectiveness of land use controls. These land use controls will be relied upon to protect human health and the environment at areas of the ORR undergoing remediation pursuant to the Comprehensive Environmental Response, Compensation, and Liability Act and/or the Resource Conservation and Recovery Act. This plan will be implemented by means of a Memorandum of Understanding (MOU) incorporating its terms with the United States EPA and TDEC. The majority of projects described in this report are grouped into five watersheds. They are the East Tennessee Technical Park (ETTP) Watershed (formerly the K-25 Site), the Melton Valley (MV) and Bethel Valley (BV) Watersheds at the Oak Ridge National Laboratory (ORNL), and the Bear Creek Valley (BCV) and Upper East Fork Poplar Creek (UEFPC) Watersheds at the Y-12 Plant.

  9. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  10. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  11. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

    E-Print Network [OSTI]

    sound velocity in GaN. The cut off wave vector is given by where NA is the Avogadro number, is the mass

  12. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  13. mp ILLiad TN: 427447 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII

    E-Print Network [OSTI]

    Fractures and other nonwelded contacts are important mechanical and hydrological features of rock ... at di?erent effective stresses under dry and saturated conditions at room temperature. ... angle is commonly referred to as the quality factor Q and is .... data for fractured specimens E32, E30 and E35 as a function of stress.

  14. US ESC TN Site Consumption

    Gasoline and Diesel Fuel Update (EIA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustments (Billion Cubic Feet) Wyoming963 1.969 1.979Coal Consumers inYear JanSales Type: Sales120 US ENC WIESC

  15. INDEPENDENT VERIFICATION SURVEY REPORT FOR EXPOSURE UNITS Z2-24, Z2-31, Z2-32, AND Z2-36 IN ZONE 2 OF THE EAST TENNESSEE TECHNOLOGY PARK OAK RIDGE, TENNESSEE

    SciTech Connect (OSTI)

    none,

    2013-10-10

    The U.S. Department of Energy (DOE) Oak Ridge Office of Environmental Management selected Oak Ridge Associated Universities (ORAU), through the Oak Ridge Institute for Science and Education (ORISE) contract, to perform independent verification (IV) at Zone 2 of the East Tennessee Technology Park (ETTP) in Oak Ridge, Tennessee. ORAU has concluded IV surveys, per the project-specific plan (PSP) (ORAU 2013a) covering exposure units (EUs) Z2-24, -31, -32, and -36. The objective of this effort was to verify the following. • Target EUs comply with requirements in the Zone 2 Record of Decision (ROD) (DOE 2005), as implemented by using the dynamic verification strategy presented in the dynamic work plan (DWP) (BJC 2007) • Commitments in the DWP were adequately implemented, as verified via IV surveys and soil sampling The Zone 2 ROD establishes maximum remediation level (RLmax) values and average RL (RLavg) values for the primary contaminants of concern (COCs) U-234, U-235, U-238, Cs-137, Np-237, Ra-226, Th-232, arsenic, mercury, and polychlorinated biphenyls (PCBs). Table 1.1 lists Zone 2 COCs with associated RLs. Additional radiological and chemical contaminants were also identified during past characterization and monitoring actions, though the ROD does not present RLs for these potential contaminants. IV activities focused on the identification and quantification of ROD-specific COCs in surface soils, but also generated data for other analytes to support future decisions. ORAU personnel also reviewed EU-specific phased construction completion reports (PCCRs) to focus IV activities and identify potential judgmental sample locations, if any.

  16. Istanbul,Turkey & Atlanta, GA Istanbul,Turkey

    E-Print Network [OSTI]

    Frantz, Kyle J.

    Istanbul,Turkey & Atlanta, GA Istanbul,Turkey & Atlanta, GA 2012 Media, Journalism and Business for departure to Istanbul,Turkey Day 9 Depart for Istanbul; guided cultural visit upon arrival; group dinner Day business leaders; site visits to local universities Day 18 UPS and the value of logistics inTurkey Day 19

  17. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  18. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-?m transport was observed within an electron spin lifetime of 1.2?ns at room temperature when using an in-plane electric field of 1.75?kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  19. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  20. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  1. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  2. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  3. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  4. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect (OSTI)

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  5. COMPARISON OF RESULTS FOR QUARTER 5 SURFACE WATER SPLIT SAMPLES COLLECTED AT THE NUCLEAR FUEL SERVICES SITE ERWIN TENNESSEE

    SciTech Connect (OSTI)

    2013-09-23

    Oak Ridge Associated Universities (ORAU), under the Oak Ridge Institute for Science and Education (ORISE) contract, collected split surface water samples with Nuclear Fuel Services (NFS) representatives on August 21, 2013. Representatives from the U.S. Nuclear Regulatory Commission (NRC) and the Tennessee Department of Environment and Conservation were also in attendance. Samples were collected at four surface water stations, as required in the approved Request for Technical Assistance number 11-018. These stations included Nolichucky River upstream (NRU), Nolichucky River downstream (NRD), Martin Creek upstream (MCU), and Martin Creek downstream (MCD). Both ORAU and NFS performed gross alpha and gross beta analyses, and the comparison of results using the duplicate error ratio (DER), also known as the normalized absolute difference, are tabulated. All DER values were less than 3 and results are consistent with low (e.g., background) concentrations.

  6. Remedial investigation report on Waste Area Group 5 at Oak Ridge National Laboratory, Oak Ridge, Tennessee. Volume 1: Technical summary

    SciTech Connect (OSTI)

    1995-03-01

    A remedial investigation (RI) was performed to support environmental restoration activities for Waste Area Grouping (WAG) 5 at the Oak Ridge National Laboratory (ORNL) in Oak Ridge, Tennessee. The WAG 5 RI made use of the observational approach, which concentrates on collecting only information needed to assess site risks and support future cleanup work. This information was interpreted and is presented using the framework of the site conceptual model, which relates contaminant sources and release mechanisms to migration pathways and exposure points that are keyed to current and future environmental risks for both human and ecological receptors. The site conceptual model forms the basis of the WAG 5 remedial action strategy and remedial action objectives. The RI provided the data necessary to verify this model and allows recommendations to be made to accomplish those objectives.

  7. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ) In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells

  8. Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns

    E-Print Network [OSTI]

    Jahns, Jürgen

    Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns Current crowding in mesa-structure GaInN/GaN light-emitting diodes (LEDs) grown on insulating and a saturation of the optical output power at high injection currents. It is shown that the optical power

  9. Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors

    E-Print Network [OSTI]

    Florida, University of

    , creating both electron traps and increasing electron tunneling through the defect states [4Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron 2011 a b s t r a c t AlGaN/GaN High Electron Mobility Transistors were found to exhibit a negative

  10. Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat

    E-Print Network [OSTI]

    Shepelyansky, Dima

    Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

  11. Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal

    E-Print Network [OSTI]

    Ozbay, Ekmel

    between GaN and a sapphire substrate, the dislocation scattering mechanism and the electron spillover

  12. Atomistic description of the electronic structure of InxGa1xAs alloys and InAsGaAs superlattices

    E-Print Network [OSTI]

    Kent, Paul

    quantum-wells15,20 (InxGa1 xAs)n /InP on InP and (InxGa1 xAs)n /GaAs on GaAs, and v GaAs-embedded InAs quantum dots.21­23 We wish to provide a uniform the- oretical description of the electronic structure-period dependence of the band offsets and interband transitions of InAs/GaAs systems on InP and GaAs substrates. DOI

  13. Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 m; accepted 3 June 2013; published online 19 June 2013) InGaN/GaN light-emitting diodes (LEDs) with graded , which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which

  14. Low-frequency noise in GaNAlGaN heterostructure field-effect transistors at cryogenic temperatures

    E-Print Network [OSTI]

    Pala, Nezih

    that the 1/f noise in GaN/AlGaN HFETs might be caused by electron tunneling from the channel to the traps was practically independent of the frequency of analysis. The model linking this maximum to the electron tunneling Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics

  15. Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

    SciTech Connect (OSTI)

    Spitzer, M.B.; Vernon, S.M.; Wolfson, R.G.; Tobin, S.P.

    1984-01-01

    The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

  16. Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

  17. GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

    E-Print Network [OSTI]

    be well suited for exploitation of long wavelength quantum dot and dilute nitride technology, resulting in single lateral mode emission from an In0.17Ga0.83As double quantum well laser. Introduction: Lasers based on the GaAs materials system offer advan- tages over their InP counterparts, such as the use

  18. Improved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering by nanoparticles

    E-Print Network [OSTI]

    Yu, Edward T.

    of QDs in the context of our work is attractive for achieving long wavelength absorption in solar cells enhancement at all infrared wave- lengths in the device photocurrent spectrum. Epitaxial layer structuresImproved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering

  19. Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high

  20. SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

    E-Print Network [OSTI]

    Florida, University of

    for spacecraft and other long-term sensing applications. However, hydrogen is a dangerous gas for storage for monitoring leakage of hydrogen storage equipment and fuel tanks for spacecraft and hydrogen fuel cellSnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

  1. Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations 

    E-Print Network [OSTI]

    Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

    2007-01-01

    A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

  2. DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS

    E-Print Network [OSTI]

    Honsberg, Christiana

    photovoltaic efficiency of 39% at 236 suns is achieved by a triple-junction GaInP- GaInAs-Ge tandem solar cell [1]. While the achievable efficiency of triple-junction tandem solar cells is restricted to about 40% [2], modeling results show that a tandem solar cell of five junctions or greater, or an equivalent

  3. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect (OSTI)

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  4. Tennessee Energy and Cost Savings for New Single- and Multifamily Homes: 2009 and 2012 IECC as Compared to the 2006 IECC

    SciTech Connect (OSTI)

    Lucas, Robert G.; Taylor, Zachary T.; Mendon, Vrushali V.; Goel, Supriya

    2012-06-15

    The 2009 and 2012 International Energy Conservation Codes (IECC) yield positive benefits for Tennessee homeowners. Moving to either the 2009 or 2012 IECC from the 2006 IECC is cost effective over a 30-year life cycle. On average, Tennessee homeowners will save $1,809 over 30 years under the 2009 IECC, with savings still higher at $6,102 with the 2012 IECC. After accounting for upfront costs and additional costs financed in the mortgage, homeowners should see net positive cash flows (i.e., cumulative savings exceeding cumulative cash outlays) in 1 year for both the 2009 and 2012 IECC. Average annual energy savings are $123 for the 2009 IECC and $415 for the 2012 IECC.

  5. Preliminary assessment report for Grubbs/Kyle Training Center, Smyrna/Rutherford County Regional Airport, Installation 47340, Smyrna, Tennessee. Installation Restoration Program

    SciTech Connect (OSTI)

    Dennis, C.; Stefano, J.

    1993-07-01

    This report presents the results of the preliminary assessment (PA) conducted by Argonne National Laboratory at the Tennessee Army National Guard (TNARNG) property near Smyrna, Tennessee. Preliminary assessments of federal facilities are being conducted to compile the information necessary for completing preremedial activities and to provide a basis for establishing corrective actions in response to releases of hazardous substances. The principal objective of the PA is to characterize the site accurately and determine the need for further action by examining site activities, quantities of hazardous substances present, and potential pathways by which contamination could affect public health and the environment. This PA satisfies, for the Grubbs/Kyle Training Center property, the requirement of the Department of Defense Installation Restoration Program.

  6. In-Process Analysis Program for the Isolock sampler at the Gunite and Associated Tanks, Oak Ridge National Laboratory, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    NONE

    1998-05-01

    The In-Process Analysis Program documents the requirements for handling, transporting, and analyzing waste slurry samples gathered by the Bristol Isolock slurry sampler from the Gunite and Associated Tanks at Oak Ridge National Laboratory in Oak Ridge, Tennessee. Composite samples will be gathered during sludge retrieval operations, labeled, transported to the appropriate laboratory, and analyzed for physical and radiological characteristics. Analysis results will be used to support occupational exposure issues, basic process control management issues, and prediction of radionuclide flow.

  7. The Department of Energy's American Recovery and Reinvestment Act - Tennessee State Energy Program, 0AS-RA-L-12-04

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCEDInstallers/ContractorsPhotovoltaics »TanklessResearchEnergy2FallDepartment ofTennessee State

  8. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 × emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 × 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  9. Characterization of Zns-GaP Naon-composites

    SciTech Connect (OSTI)

    Todd, V.

    1993-12-09

    It proved possible to produce consistent, high-quality nanocrystalline ZnS powders with grain sizes as small as 8 nm. These powders are nano-porous and are readily impregnated with GaP precursor, although inconsistently. Both crystal structure and small grain size of the ZnS can be maintained through the use of GaP. Heat treatment of the impregnated powders results in a ZnS-GaP composite structure where the grain sizes of the phases are on the order of 10--20 nm. Conventional powder processing should be able to produce optically dense ceramic compacts with improved mechanical properties and suitable IR transmission.

  10. Indium distribution at the interfaces of (Ga,In)(N,As)/GaAs quantum wells

    SciTech Connect (OSTI)

    Luna, E.; Ishikawa, F.; Batista, P. D.; Trampert, A. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin (Germany)

    2008-04-07

    The indium distribution across (Ga,In)(N,As) quantum wells is determined by using transmission electron microscopy techniques. Inside the quantum well, the indium distribution is well described by Muraki's segregation model; however, it fails in reflecting the concentration at the interfaces. To describe them, we propose a sigmoidal law which defines the smooth variation of the indium concentration with the position and provides a systematic and quantitative characterization of the interfaces. The thermal stability of the interfaces and their interplay with segregation effects are discussed. A connection between the high thermal robustness of the interfaces and the inherent thermodynamic miscibility gap of the alloy is suggested.

  11. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  12. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

    2013-05-15

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

  13. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  14. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

    SciTech Connect (OSTI)

    Guo, Lei; Yang, Xuelin Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Feng, Zhihong; Lv, Yuanjie; Wang, Xinqiang; Shen, B.; Ge, Weikun

    2014-12-15

    We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

  15. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

    SciTech Connect (OSTI)

    Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing, E-mail: jqpan@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Chen, Weixi [State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871 (China); Ding, Ying, E-mail: Ying.Ding@glasgow.ac.uk [School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)

    2014-10-06

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ?51?nm at a center wavelength of 1060?nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

  16. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect (OSTI)

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  17. Electrical degradation mechanisms of RF power GaAs PHEMTs

    E-Print Network [OSTI]

    Villanueva, Anita A. (Anita Ariel), 1978-

    2007-01-01

    GaAs Pseudomorphic High-Electron Mobility Transistors (PHEMTs) are widely used in RF power applications. Since these devices typically operate at high power levels and under high voltage biasing, their electrical reliability ...

  18. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  19. Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Badcock, T. J., E-mail: Thomas.badcock@crl.toshiba.co.uk; Dawson, P.; Davies, M. J. [School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kappers, M. J.; Massabuau, F. C.-P.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

    2014-03-21

    We have studied the carrier recombination dynamics in an InGaN/GaN multiple quantum well structure as a function of emission energy and excitation density between temperatures of 10?K and 100?K. Under relatively low levels of excitation, the photoluminescence (PL) intensity and decay time of emission on the high energy side of the luminescence spectrum decrease strongly between 10?K and 50?K. In contrast, for emission detected on the low energy side of the spectrum, the PL intensity and decay time increase over the same temperature range. These results are consistent with a thermally activated carrier redistribution process in which the (temperature dependent) average timescale for carrier transfer into or out of a localised state depends on the energy of the given state. Thus, the transfer time out of shallow, weakly localised states is considerably shorter than the arrival time into more deeply localised states. This picture is consistent with carriers hopping between localisation sites in an uncorrelated disorder potential where the density of localised states decreases with increasing localisation depth, e.g., a exponential or Gaussian distribution resulting from random alloy disorder. Under significantly higher levels of excitation, the increased occupation fraction of the localised states results in a greater average separation distance between unoccupied localised states, causing a suppression of the spectral and dynamic signatures of the hopping transfer of carriers.

  20. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

    SciTech Connect (OSTI)

    Ledentsov, N. N., E-mail: nikolay.ledentsov@v-i-systems.com; Shchukin, V. A. [VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623 (Germany); Lyytikäinen, J.; Okhotnikov, O. [Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720 (Finland); Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V. [A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation); Schlichting, S.; Nippert, F.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623 (Germany)

    2014-11-03

    We report on green (550–560?nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (?500?A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (?550?nm at room temperature). At high current densities (>1?kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4?kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14?kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

  1. Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

    SciTech Connect (OSTI)

    Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

    2014-11-07

    Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280?nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

  2. High intensity low temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs

    SciTech Connect (OSTI)

    Shvarts, Maxim Z., E-mail: shvarts@scell.ioffe.ru; Kalyuzhnyy, Nikolay A.; Mintairov, Sergey A.; Soluyanov, Andrei A.; Timoshina, Nailya Kh. [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021 (Russian Federation); Gudovskikh, Alexander S. [Saint-Petersburg Academic University - Nanotechnology Research and Education Centre RAS, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

    2014-09-26

    In the work, the results of an investigation of GaInP/GaInAs/Ge MJ SCs intended for converting concentrated solar radiation, when operating at low temperatures (down to ?190 °C) are presented. A kink of the cell I-V characteristic has been observed in the region close to V{sub oc} starting from ?20°C at operation under concentrated sunlight. The causes for its occurrence have been analyzed and the reasons for formation of a built-in potential barrier for majority charge carriers at the n-GaInP/n-Ge isotype hetero-interface are discussed. The effect of charge carrier transport in n-GaInP/n-pGe heterostructures on MJ SC output characteristics at low temperatures has been studied including EL technique.

  3. The origin and reduction of switching noise in GaAs/AlGaAs lateral gated devices

    E-Print Network [OSTI]

    Davies, John H.

    to cryogenic temperature with all gates grounded to the substrate to protect against electrostatic effects in AlGaAs: electrons `freeze' into deep traps ­ DX centres ­ below about 150 K. The occupation of donors

  4. Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers

    E-Print Network [OSTI]

    Keogh, David Martin

    2006-01-01

    assuming the material growth technology allows for all ofand a relatively immature growth technology, as well as theof the art for InGaN growth technology. Epitaxial growth of

  5. Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties

    SciTech Connect (OSTI)

    Sztein, Alexander, E-mail: asztein@umail.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106 (United States); Bowers, John E.; DenBaars, Steven P.; Nakamura, Shuji [Materials Department, University of California, Santa Barbara, California 93106 (United States); Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2014-01-27

    A novel polarization field engineering based strategy to simultaneously achieve high electrical conductivity and low thermal conductivity in thermoelectric materials is demonstrated. Polarization based electric fields are used to confine electrons into two-dimensional electron gases in GaN/AlN/Al{sub 0.2}Ga{sub 0.8}N superlattices, resulting in improved electron mobilities as high as 1176 cm{sup 2}/Vs and in-plane thermal conductivity as low as 8.9?W/mK. The resulting room temperature ZT values reach 0.08, a factor of four higher than InGaN and twelve higher than GaN, demonstrating the potential benefits of this polarization based engineering strategy for improving the ZT and efficiencies of thermoelectric materials.

  6. Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors 

    E-Print Network [OSTI]

    Johnson, Derek Wade

    2014-07-31

    production is projected to consume ~100,000 wafers per year by 2015 (Yole Development, “Power GaN – 2012 Edition”), this manufacturing breakthrough represents potential savings of ~$17 million per year....

  7. Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

    E-Print Network [OSTI]

    Florida, University of

    2011; published online 21 March 2011 A subnanometer thick interfacial oxide layer present between used to characterize a Ni/AlGaN interfacial oxide layer with subnanometer thickness. The semiconducting

  8. Geologic Controls of Hydrocarbon Occurrence in the Southern Appalachian Basin in Eastern Tennessee, Southwestern Virginia, Eastern Kentucky, and Southern West Virginia

    SciTech Connect (OSTI)

    Robert D. Hatcher

    2003-05-31

    This report summarizes the first-year accomplishments of a three-year program to investigate the geologic controls of hydrocarbon occurrence in the southern Appalachian basin in eastern Tennessee, southwestern Virginia, eastern Kentucky, and southern West Virginia. The project: (1) employs the petroleum system approach to understand the geologic controls of hydrocarbons; (2) attempts to characterize the T-P parameters driving petroleum evolution; (3) attempts to obtain more quantitative definitions of reservoir architecture and identify new traps; (4) is working with USGS and industry partners to develop new play concepts and geophysical log standards for subsurface correlation; and (5) is geochemically characterizing the hydrocarbons (cooperatively with USGS). First-year results include: (1) meeting specific milestones (determination of thrust movement vectors, fracture analysis, and communicating results at professional meetings and through publication). All milestones were met. Movement vectors for Valley and Ridge thrusts were confirmed to be west-directed and derived from pushing by the Blue Ridge thrust sheet, and fan about the Tennessee salient. Fracture systems developed during Paleozoic, Mesozoic, and Cenozoic to Holocene compressional and extensional tectonic events, and are more intense near faults. Presentations of first-year results were made at the Tennessee Oil and Gas Association meeting (invited) in June, 2003, at a workshop in August 2003 on geophysical logs in Ordovician rocks, and at the Eastern Section AAPG meeting in September 2003. Papers on thrust tectonics and a major prospect discovered during the first year are in press in an AAPG Memoir and published in the July 28, 2003, issue of the Oil and Gas Journal. (2) collaboration with industry and USGS partners. Several Middle Ordovician black shale samples were sent to USGS for organic carbon analysis. Mississippian and Middle Ordovician rock samples were collected by John Repetski (USGS) and RDH for conodont alteration index determination to better define regional P-T conditions. Efforts are being made to calibrate and standardize geophysical log correlation, seismic reflection data, and Ordovician lithologic signatures to better resolve subsurface stratigraphy and structure beneath the poorly explored Plateau in Tennessee and southern Kentucky. We held a successful workshop on Ordovician rocks geophysical log correlation August 7, 2003 that was cosponsored by the Appalachian PTTC, the Kentucky and Tennessee geological surveys, the Tennessee Oil and Gas Association, and small independents. Detailed field structural and stratigraphic mapping of a transect across part of the Ordovician clastic wedge in Tennessee was begun in January 2003 to assist in 3-D reconstruction of part of the southern Appalachian basin and better assess the nature of a major potential source rock assemblage. (3) Laying the groundwork through (1) and (2) to understand reservoir architecture, the petroleum systems, ancient fluid migration, and conduct 3-D analysis of the southern Appalachian basin.

  9. Geologic Controls of Hydrocarbon Occurrence in the Appalachian Basin in Eastern Tennessee, Southwestern Virginia, Eastern Kentucky, and Southern West Virginia

    SciTech Connect (OSTI)

    Hatcher, Robert D

    2005-11-30

    This report summarizes the accomplishments of a three-year program to investigate the geologic controls of hydrocarbon occurrence in the southern Appalachian basin in eastern Tennessee, southwestern Virginia, eastern Kentucky, and southern West Virginia. The project: (1) employed the petroleum system approach to understand the geologic controls of hydrocarbons; (2) attempted to characterize the P-T parameters driving petroleum evolution; (3) attempted to obtain more quantitative definitions of reservoir architecture and identify new traps; (4) is worked with USGS and industry partners to develop new play concepts and geophysical log standards for subsurface correlation; and (5) geochemically characterized the hydrocarbons (cooperatively with USGS). Third-year results include: All project milestones have been met and addressed. We also have disseminated this research and related information through presentations at professional meetings, convening a major workshop in August 2003, and the publication of results. Our work in geophysical log correlation in the Middle Ordovician units is bearing fruit in recognition that the criteria developed locally in Tennessee and southern Kentucky are more extendible than anticipated earlier. We have identified a major 60 mi-long structure in the western part of the Valley and Ridge thrust belt that has been successfully tested by a local independent and is now producing commercial amounts of hydrocarbons. If this structure is productive along strike, it will be one of the largest producing structures in the Appalachians. We are completing a more quantitative structural reconstruction of the Valley and Ridge and Cumberland Plateau than has been made before. This should yield major dividends in future exploration in the southern Appalachian basin. Our work in mapping, retrodeformation, and modeling of the Sevier basin is a major component of the understanding of the Ordovician petroleum system in this region. Prior to our undertaking this project, this system was the least understood in the Appalachian basin. This project, in contrast to many if not most programs undertaken in DOE laboratories, has a major educational component wherein three Ph.D. students have been partially supported by this grant, one M.S. student partially supported, and another M.S. student fully supported by the project. These students will be well prepared for professional careers in the oil and gas industry.

  10. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect (OSTI)

    Özduran, Mustafa; Turgut, Kemal; Arikan, Nihat; ?yigör, Ahmet; Candan, Abdullah

    2014-10-06

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  11. Revised RCRA closure plan for the Interim Drum Yard (S-030) at the Oak Ridge Y-12 Plant, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Smith, C.M.

    1994-09-01

    The Interim Drum Yard (IDY) facility is a containerized waste storage area located in the Y-12 exclusion area. It was used to store waste materials which are regulated by RCRA (Resource Conservation and Recovery Act); uranyl nitrate solutions were also stored there. The closure plan outlines the actions required to achieve closure of IDY and is being submitted in accordance with TN Rule 1200-1-11.05(7) and 40 CFR 265.110.

  12. Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure

    SciTech Connect (OSTI)

    Khmissi, H.; Baira, M.; Bouzaieene, L.; Saidi, F.; Maaref, H. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Sfaxi, L. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Universite de Sousse Faculte des Sciences de Monastir, Avenue de l'Environnement 5019 Monastir (Tunisia); Bru-Chevallier, C. [Institut des Nanotechnologies de Lyon (INL), CNRS UMR-5270, INSA-LYON, 7, Avenue Jean Capelle, Bat. Blaise Pascal, 69621 Villeurbanne (France)

    2011-03-01

    Optical properties of InAs quantum dots (QDs) inserted in AlGaAs/GaAs modulation doped heterostructure are investigated. To study the effect of carrier transfer behavior on the luminescence of self-assembled quantum dots, a series of sample has been prepared using molecular beam epitaxy (Riber 32 system) in which we have varied the thickness separating the delta dopage and the InAs quantum dots layer. Photoluminescence spectra show the existence of two peaks that can be attributed to transition energies from the ground state (E{sub 1}-HH{sub 1}) and the first excited state (E{sub 2}-HH{sub 2}). Two antagonist effects have been observed, a blue shift of the emission energies result from electron transferred from the AlGaAs/GaAs heterojunction to the InAs quantum dots and a red shift caused by the quantum confined Stark effect due to the internal electric field existing In the AlGaAs/GaAs heterojunction.

  13. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  14. Environmental Management Waste Management Facility Waste Lot Profile for the K-770 Scrap Yard Soils and Miscellaneous Debris, East Tennessee Technology Park, Oak Ridge, Tennessee - EMWMF Waste Lot 4.12

    SciTech Connect (OSTI)

    Davenport M.

    2009-04-15

    Waste Lot 4.12 consists of approximately 17,500 yd{sup 3} of low-level, radioactively contaminated soil, concrete, and incidental metal and debris generated from remedial actions at the K-770 Scrap Metal Yard and Contaminated Debris Site (the K-770 Scrap Yard) at the East Tennessee Technology Park (ETTP). The excavated soil will be transported by dump truck to the Environmental Management Waste Management Facility (EMWMF). This profile provides project-specific information to demonstrate compliance with Attainment Plan for Risk/Toxicity-based Waste Acceptance Criteria at the Oak Ridge Reservation, Oak Ridge, Tennessee (DOE 2001). The K-770 Scrap Yard is an approximately 36-acre storage area located southwest of the main portion of ETTP, outside the security perimeter fence in the Powerhouse Area adjacent to the Clinch River. The K-770 area was used to store radioactively contaminated or suspected contaminated materials during and previous to the K-25 Site cascade upgrading program. The waste storage facility began operation in the 1960s and is estimated to at one time contain in excess of 40,000 tons of low-level, radioactively contaminated scrap metal. Scrap metal was taken to the site when it was found to contain alpha or beta/gamma activity on the surface or if the scrap metal originated from a process building. The segregated metal debris was removed from the site as part of the K-770 Scrap Removal Action (RA) Project that was completed in fiscal year (FY) 2007 by Bechtel Jacobs Company LLC (BJC). An area of approximately 10 acres is located in EUs 29 and 31 where the scrap was originally located in the 100-year floodplain. In the process of moving the materials around and establishing segregated waste piles above the 100-year floodplain, the footprint of the site was expanded by 10-15 acres in EUs 30 and 32. The area in EUs 29 and 31 that was cleared of metallic debris in the floodplain was sown with grass. The areas in EUs 30 and 32 have some scattered vegetation but are generally open and accessible. With limited exception, all materials contained in the scrap yard have been removed and disposed at the EMWMF. Soils that underlay the original waste storage area in EUs 29 and 31 as well as soils that underlay the scrap piles in EUs 30 and 32 show substantially elevated radioactivity. In addition to soils present at the site, remaining portions of foundations/floor slabs for Bldgs. K-725, K-726, and K-736 as well as the unnamed pad at the northeast corner of the site constructed to support the sort and segregation operations at the K-770 Scrap Removal Project in 2006 and several other small, unnamed concrete pads are included in this waste lot. While many of these foundations/floor slabs will be removed because they are contaminated, some of the smaller unamed concrete pads will be removed in order to access contaminated soils that are around and under the pads and regrade the site. Appendix E contains a map showing the areas of soil and concrete pads that are expected to be excavated. Soils in the areas indicated on this map will be removed to approximately one foot below the surface. (This corresponds to the soil interval sampled and analyzed to characterize this waste lot.) Contaminants present in the soils are directly derived from metallic debris and rubbish handled by the waste storage operations, are concentrated in the top few inches, and include the predominant constituents of concern associated with the metallic waste already disposed at EMWMF. Additionally, some residual metallic debris remains embedded in the shallow soils that underlay the former debris piles. This residual metallic debris is eligible for disposal in the EMWMF WAC criteria as defined in Waste Profile for: Disposal of the Scrap Removal Project Waste Lot 65.1 East Tennessee Technology Park, Oak Ridge, Tennessee (BJC 2004a). This waste, however, has been included in Waste Lot 4.12 to conform to the more rigorous profiling requirements currently contained in Waste Acceptance Criteria Attainment Team Project Execution Plan Environmental Manag

  15. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  16. Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well

    E-Print Network [OSTI]

    Jalali. Bahram

    Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico, New Mexico 87545 Received 26 February 2007; accepted 1 June 2007; published online 28 June 2007 intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

  17. A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    amplifier using GaN- HEMTs-on-Sapphire. I INTRODUCTION GaN HEMTs have enormous potential for realizing high-power Traveling Wave Power Amplifier circuit (TWPA)[1][2] for realization of wideband power amplifiersWE4A-5 A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs Jane J

  18. Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2

    SciTech Connect (OSTI)

    Hongpinyo, V; Ding, Y H; Dimas, C E; Wang, Y; Ooi, B S; Qiu, W; Goddard, L L; Behymer, E M; Cole, G D; Bond, T C

    2008-06-11

    The authors investigate the effect of intermixing in InGaAs/GaAs quantum well structure using Cu-doped SiO{sub 2}. The incorporation of Cu into the silica film yields larger bandgap shift than typical impurity-free vacancy diffusion (IFVD) method at a lower activation temperature. We also observe enhancement of the photoluminescence (PL) signal from the intermixed InGaAs/GaAs quantum well structure after being cycle-annealed at 850 C.

  19. Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells J. Simon,1,a

    E-Print Network [OSTI]

    Haller, Gary L.

    . INTRODUCTION Triple-junction metamorphic solar cells have reached ef- ficiencies as high as 41.1% by combiningMetamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells J. Simon,1,a S. Tomasulo,1 P-yP solar cells. Tensile-strained GaAsxP1-x buffers grown on GaAs using unoptimized conditions

  20. FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS

    E-Print Network [OSTI]

    Atwater, Harry

    FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS RobynAlAs/InGaAsP/InGaAs triple junction solar cell grown on InP substrate. X-ray diffraction characterization shows high quality solar cell materials. Preliminary 1-sun AM1.5D testing of the triple junction solar cell shows promising

  1. Progress and Future Plans for Mercury Remediation at the Y-12 National Security Complex, Oak Ridge, Tennessee - 13059

    SciTech Connect (OSTI)

    Wilkerson, Laura O. [DOE Oak Ridge, P.O. Box 2001, Oak Ridge, TN 37831 (United States)] [DOE Oak Ridge, P.O. Box 2001, Oak Ridge, TN 37831 (United States); DePaoli, Susan M. [Pro2Serve, 1100 Bethel Valley Rd., Oak Ridge, TN 37830 (United States)] [Pro2Serve, 1100 Bethel Valley Rd., Oak Ridge, TN 37830 (United States); Turner, Ralph [P.O. Box 421, Squamish, BC V8B 0A4 (United States)] [P.O. Box 421, Squamish, BC V8B 0A4 (United States)

    2013-07-01

    The U.S. Department of Energy (DOE), along with the Tennessee Department of Environment and Conservation (TDEC) and the U.S. Environmental Protection Agency (EPA), has identified mercury contamination at the Y-12 National Security Complex (Y-12) as the highest priority cleanup risk on the Oak Ridge Reservation (ORR). The historic loss of mercury to the environment dwarfs any other contaminant release on the ORR. Efforts over the last 20 years to reduce mercury levels leaving the site in the surface waters of Upper East Fork Poplar Creek (UEFPC) have not resulted in a corresponding decrease in mercury concentrations in fish. Further reductions in mercury surface water concentrations are needed. Recent stimulus funding through the American Recovery and Reinvestment Act of 2009 (ARRA) has supported several major efforts involving mercury cleanup at Y-12. Near-term implementation activities are being pursued with remaining funds and include design of a centrally located mercury treatment facility for waterborne mercury, treatability studies on mercury-contaminated soils, and free mercury removal from storm drains. Out-year source removal will entail demolition/disposal of several massive uranium processing facilities along with removal and disposal of underlying contaminated soil. As a National Priorities List (NPL) site, cleanup is implemented under the Comprehensive Environmental Response, Compensation, and Liability Act (CERCLA) and directed by the Federal Facility Agreement (FFA) between DOE, EPA, and TDEC. The CERCLA process is followed to plan, reach approval, implement, and monitor the cleanup. (authors)

  2. COMPARISON OF RESULTS FOR QUARTER 2 SURFACE WATER SPLIT SAMPLES COLLECTED AT THE NUCLEAR FUEL SERVICES SITE, ERWIN, TENNESSEE

    SciTech Connect (OSTI)

    2013-01-21

    Oak Ridge Associated Universities (ORAU), under the Oak Ridge Institute for Science and Education (ORISE) contract, collected split surface water samples with Nuclear Fuel Services (NFS) representatives on November 15, 2012. Representatives from the U.S. Nuclear Regulatory Commission and Tennessee Department of Environment and Conservation were also in attendance. Samples were collected at four surface water stations, as required in the approved Request for Technical Assistance number 11-018. These stations included Nolichucky River upstream (NRU), Nolichucky River downstream (NRD), Martin Creek upstream (MCU), and Martin Creek downstream (MCD). Both ORAU and NFS performed gross alpha and gross beta analyses, and the results are compared using the duplicate error ratio (DER), also known as the normalized absolute difference. A DER {<=} 3 indicates that, at a 99% confidence interval, split sample results do not differ significantly when compared to their respective one standard deviation (sigma) uncertainty (ANSI N42.22). The NFS split sample report does not specify the confidence level of reported uncertainties (NFS 2012). Therefore, standard two sigma reporting is assumed and uncertainty values were divided by 1.96. In conclusion, all DER values were less than 3 and results are consistent with low (e.g., background) concentrations.

  3. Remedial investigation plan for Waste Area Grouping 1 at Oak Ridge National Laboratory, Oak Ridge, Tennessee: Responses to regulator comments

    SciTech Connect (OSTI)

    Not Available

    1991-05-01

    This document, ES/ER-6 D2, is a companion document to ORNL/RAP/Sub-87/99053/4 R1, Remedial Investigation Plan for ORNL Waste Area Grouping 1, dated August 1989. This document lists comments received from the Environmental Protection Agency, Region 4 (EPA) and the Tennessee Department of Health and Environment (TDHE) and responses to each of these comments. As requested by EPA, a revised Remedial Investigation (RI) Plan for Waste Area Grouping (WAG) 1 will not be submitted. The document is divided into two Sections and Appendix. Section I contains responses to comments issued on May 22, 1990, by EPA's Region 4 program office responsible for implementing the Comprehensive Environmental Response, Compensation, and Liability Act (CERCLA). Section 2 contains responses to comments issued on April 7, 1989, by EPA's program office responsible for implementing the Resource Conservation and Recovery Act (RCRA); these comments include issues raised by the TDHE. The Appendix contains the attachments referenced in a number of the responses. 35 refs.

  4. A review of the history of alkali-aggregate reaction at three of the Tennessee Valley Authority`s dams

    SciTech Connect (OSTI)

    Wagner, C.D.; Newell, V.A.

    1995-12-31

    Three of The Tennessee Valley Authority (TVA) major hydroelectric projects are experiencing alkali-aggregate reaction (AAR), These projects include Fontana Dam and Powerhouse, Hiwassee Dam and Powerhouse, and Chickamauga Lock, Dam and Powerhouse, All of these dams are considered {open_quotes}high hazard,{close_quotes} causing significant economic losses from loss of power, replacement of the dam and generation facilities, and loss of life should they fail. This paper presents an overview of the descriptions of each of these projects, including construction and original instrumentation installed in the structure during construction, All of these projects are now 50 to 60 years old and are experiencing problems in one or more locations due to AAR with no indication of any slowing of the concrete growth process, Concrete problems at these projects came as no surprise. Cracks were noted within 5 years of construction, and by 1980 some of these cracks were 1/2 inch in width. continuous monitoring of these projects has always been a priority. This paper will discuss how the growth from AAR has affected each structure, which structures have been affected most, and why. It will discuss how TVA has managed AAR at these projects in the past and how TVA is changing from a reactive to a pro-active approach in its response to AAR.

  5. The development of an aquatic spill model for the White Oak Creek watershed, Oak Ridge National Laboratory, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Johnson, R.O.

    1996-05-01

    This study develops an aquatic spill model applicable to the White Oak Creek watershed draining the Oak Ridge National Laboratory. Hazardous, toxic, and radioactive chemicals are handled and stored on the laboratory reservation. An accidental spill into the White Oak Creek watershed could contaminate downstream water supplies if insufficient dilution did not occur. White Oak Creek empties into the Clinch River, which flows into the Tennessee River. Both rivers serve as municipal water supplies. The aquatic spill model provides estimates of the dilution at sequential downstream locations along White Oak creek and the Clinch River after an accidental spill of a liquid containing a radioactively decaying constituent. The location of the spill on the laboratory is arbitrary, while hydrologic conditions range from drought to extreme flood are simulated. The aquatic spill model provides quantitative estimates with which to assess water quality downstream from the site of the accidental spill, allowing an informed decision to be made whether to perform mitigating measures so that the integrity of affected water supplies is not jeopardized.

  6. Remedial investigation work plan for the Groundwater Operable Unit at Oak Ridge National Laboratory, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Not Available

    1994-03-01

    This Remedial Investigation (RI) Work Plan has been developed as part of the US Department of Energy`s (DOE`s) investigation of the Groundwater Operable Unit (GWOU) at Oak Ridge National Laboratory (ORNL) located near Oak Ridge, Tennessee. The first iteration of the GWOU RI Work Plan is intended to serve as a strategy document to guide the ORNL GWOU RI. The Work Plan provides a rationale and organization for groundwater data acquisition, monitoring, and remedial actions to be performed during implementation of environmental restoration activities associated with the ORNL GWOU. It Is important to note that the RI Work Plan for the ORNL GWOU is not a prototypical work plan. The RI will be conducted using annual work plans to manage the work activities, and task reports will be used to document the results of the investigations. Sampling and analysis results will be compiled and reported annually with a review of data relative to risk (screening level risk assessment review) for groundwater. This Work Plan outlines the overall strategy for the RI and defines tasks which are to be conducted during the initial phase of investigation. This plan is presented with the understanding that more specific addenda to the plan will follow.

  7. Confirmatory Sampling and Analysis Plan for the Lower East Fork Poplar Creek operable unit, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    NONE

    1996-04-01

    On December 21, 1989, the EPA placed the US Department of Energy`s (DOE`s) Oak Ridge Reservation (ORR) on the National Priorities List (NPL). On January 1, 1992, a Federal Facilities Agreement (FFA) between the DOE Field Office in Oak Ridge (DOE-OR), EPA Region IV, and the Tennessee Department of Environment and Conservation (TDEC) went into effect. This FFA establishes the procedural framework and schedule by which DOE-OR will develop, coordinate, implement and monitor environmental restoration activities on the ORR in accordance with applicable federal and state environmental regulations. The DOE-OR Environmental Restoration Program for the ORR addresses the remediation of areas both within and outside the ORR boundaries. This sampling and analysis plan focuses on confirming the cleanup of the stretch of EFPC flowing from Lake Reality at the Y-12 Plant through the City of Oak Ridge, to Poplar Creek on the ORR and its associated floodplain. Both EFPC and its floodplain have been contaminated by releases from the Y-12 Plant since the mid-1950s. Because the EFPC site-designated as an ORR operable unit (OU) under the Comprehensive Environmental Response, Compensation, and Liability Act (CERCLA) is included on the NPL, its remediation must follow the specific procedures mandated by CERCLA, as amended by the Superfund Amendments and Reauthorization Act in 1986.

  8. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore »the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  9. Radiation damage of GaAs thin-film solar cells on Si substrates

    SciTech Connect (OSTI)

    Itoh, Y.; Yamaguchi, M.; Nishioka, T.; Yamamoto, A.

    1987-01-15

    1-MeV electron irradiation damages in GaAs thin-film solar cells on Si substrates are examined for the first time. Damage constant for minority-carrier diffusion length in GaAs heteroepitaxial films on Si substrates is found to be the same as that in GaAs homoepitaxial films on GaAs substrates. This agreement suggests that GaAs/Si has the same defect introduction rate with radiation as GaAs/GaAs. The degradation of GaAs solar cells on Si with electron irradiation is less than that of GaAs solar cells on GaAs, because in the present, GaAs films on Si substrates have lower minority-carrier diffusion length compared to GaAs films on GaAs and these films are insensitive to radiation. The p/sup +/-p/sup +/-n AlGaAs-GaAs heteroface solar cell with junction depth of about 0.3 ..mu..m is concluded to be useful for a high-efficiency and radiation-resistant solar cell fabricated on a Si substrate.

  10. Laser Gain and Threshold Properties in Compressive-Strained and Lattice-Matched GaInNAs/GaAs Quantum Wells

    SciTech Connect (OSTI)

    Chow, W.W.; Jones, E.D.; Modine, N.A.; Allerman, A.A.; Kurtz, S.R.

    1999-08-04

    The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GAInNAs/GaAs laser structures.

  11. Metal contacts on ZnSe and GaN

    SciTech Connect (OSTI)

    Duxstad, K J [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering

    1997-05-01

    Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

  12. Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment

    SciTech Connect (OSTI)

    Ahmadi, Elaheh; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States); Chalabi, Hamidreza [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Kaun, Stephen W.; Shivaraman, Ravi; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2014-10-07

    The influence of alloy clustering on fluctuations in the ground state energy of the two-dimensional electron gas (2DEG) in AlGaN/GaN and InAlN/GaN heterostructures is studied. We show that because of these fluctuations, alloy clustering degrades the mobility even when the 2DEG wavefunction does not penetrate the alloy barrier unlike alloy disorder scattering. A comparison between the results obtained for AlGaN/GaN and InAlN/GaN heterostructures shows that alloy clustering limits the 2DEG mobility to a greater degree in InAlN/GaN heterostructures. Our study also reveals that the inclusion of an AlN interlayer increases the limiting mobility from alloy clustering. Moreover, Atom probe tomography is used to demonstrate the random nature of the fluctuations in the alloy composition.

  13. Site characterization summary report for dry weather surface water sampling upper East Fork Poplar Creek characterization area Oak Ridge Y-12 Plant, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    NONE

    1996-08-01

    This report describes activities associated with conducting dry weather surface water sampling of Upper East Fork Poplar Creek (UEFPC) at the Oak Ridge Y-12 Plant, Oak Ridge, Tennessee. This activity is a portion of the work to be performed at UEFPC Operable Unit (OU) 1 [now known as the UEFPC Characterization Area (CA)], as described in the RCRA Facility Investigation Plan for Group 4 at the Oak- Ridge Y-12 Plant, Oak Ridge, Tennessee and in the Response to Comments and Recommendations on RCRA Facility Investigation Plan for Group 4 at the Oak Ridge Y-12 Plant, Oak Ridge, Tennessee, Volume 1, Operable Unit 1. Because these documents contained sensitive information, they were labeled as unclassified controlled nuclear information and as such are not readily available for public review. To address this issue the U.S. Department of Energy (DOE) published an unclassified, nonsensitive version of the initial plan, text and appendixes, of this Resource Conservation and Recovery Act (RCRA) Facility Investigation (RFI) Plan in early 1994. These documents describe a program for collecting four rounds of wet weather and dry weather surface water samples and one round of sediment samples from UEFPC. They provide the strategy for the overall sample collection program including dry weather sampling, wet weather sampling, and sediment sampling. Figure 1.1 is a schematic flowchart of the overall sampling strategy and other associated activities. A Quality Assurance Project Plan (QAPJP) was prepared to specifically address four rounds of dry weather surface water sampling and one round of sediment sampling. For a variety of reasons, sediment sampling has not been conducted and has been deferred to the UEFPC CA Remedial Investigation (RI), as has wet weather sampling.

  14. Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

    SciTech Connect (OSTI)

    Schmidt, Gordon Müller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jürgen; Glauser, Marlene; Carlin, Jean-François; Cosendey, Gatien; Butté, Raphaël; Grandjean, Nicolas

    2014-07-21

    Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

  15. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

    SciTech Connect (OSTI)

    Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

    2010-01-15

    The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

  16. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect (OSTI)

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  17. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-01

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

  18. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D. J.; Kurtz, Sarah R.; Kibbler, A. E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-15

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.

  19. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect (OSTI)

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  20. A hole modulator for InGaN/GaN light-emitting diodes Zi-Hui Zhang, Zabu Kyaw, Wei Liu, Yun Ji, Liancheng Wang, Swee Tiam Tan, Xiao Wei Sun, and Hilmi Volkan

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    well on optical power of light-emitting diodes Appl. Phys. Lett. 96, 051113 (2010); 10-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which

  1. ENVIRONMENTAL BASELINE SURVEY REPORT FOR WEST BLACK OAK RIDGE, EAST BLACK OAK RIDGE, MCKINNEY RIDGE, WEST PINE RIDGE, AND PARCEL 21D IN THE VICINITY OF THE EAST TENNESSEE TECHNOLOGY PARK, OAK RIDGE, TENNESSEE

    SciTech Connect (OSTI)

    David A. King

    2012-11-29

    This environmental baseline survey (EBS) report documents the baseline environmental conditions of five land parcels located near the U.S. Department of Energy’s (DOE’s) East Tennessee Technology Park (ETTP), including West Black Oak Ridge, East Black Oak Ridge, McKinney Ridge, West Pine Ridge, and Parcel 21d. The goal is to obtain all media no-further-investigation (NFI) determinations for the subject parcels considering existing soils. To augment the existing soils-only NFI determinations, samples of groundwater, surface water, soil, and sediment were collected to support all media NFI decisions. The only updates presented here are those that were made after the original issuance of the NFI documents. In the subject parcel where the soils NFI determination was not completed for approval (Parcel 21d), the full process has been performed to address the soils as well. Preparation of this report included the detailed search of federal government records, title documents, aerial photos that may reflect prior uses, and visual inspections of the property and adjacent properties. Interviews with current employees involved in, or familiar with, operations on the real property were also conducted to identify any areas on the property where hazardous substances and petroleum products, or their derivatives, and acutely hazardous wastes may have been released or disposed. In addition, a search was made of reasonably obtainable federal, state, and local government records of each adjacent facility where there has been a release of any hazardous substance or any petroleum product or their derivatives, including aviation fuel and motor oil, and which is likely to cause or contribute to a release of any hazardous substance or any petroleum product or its derivatives, including aviation fuel or motor oil, on the real property. A radiological survey and soil/sediment sampling was conducted to assess baseline conditions of Parcel 21d that were not addressed by the soils-only NFI reports. Groundwater sampling was also conducted to support a Parcel 21d decision.

  2. Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

    SciTech Connect (OSTI)

    Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko; Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel; Garcia, Alipio

    2009-06-08

    We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

  3. Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets

    SciTech Connect (OSTI)

    Chu, Kuei-Yi; Chiang, Meng-Hsueh Cheng, Shiou-Ying; Liu, Wen-Chau

    2012-02-15

    Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

  4. Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Edmunds, C.; Malis, O.; Shao, J.; Shirazi-HD, M.; Manfra, M. J.

    2014-07-14

    We demonstrate THz intersubband absorption (15.6–26.1?meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14?meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a??40% reduction in the linewidth (from roughly 8 to 5?meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

  5. High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

    SciTech Connect (OSTI)

    Young, N. G. Farrell, R. M.; Iza, M.; Speck, J. S.; Perl, E. E.; Keller, S.; Bowers, J. E.; Nakamura, S.; DenBaars, S. P.

    2014-04-21

    We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

  6. InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

    SciTech Connect (OSTI)

    Alonso-Álvarez, D.; Thomas, T.; Führer, M.; Hylton, N. P.; Ekins-Daukes, N. J.; Lackner, D.; Philipps, S. P.; Bett, A. W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.

    2014-08-25

    Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1??s, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

  7. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Mingda [University of Notre Dame, IN (United States); Song, Bo [Cornell University, Ithaca, NY (United States); Qi, Meng [University of Notre Dame, IN (United States); Hu, Zongyang [University of Notre Dame, IN (United States); Nomoto, Kazuki [University of Notre Dame, IN (United States); Yan, Xiaodong [University of Notre Dame, IN (United States); Cao, Yu [IQE, Westborough, MA (United States); Johnson, Wayne [IQE, Westborough, MA (United States); Kohn, Erhard [University of Notre Dame, IN (United States); Jena, Debdeep [Cornell University, Ithaca, NY (United States); Xing, Grace Huili [Cornell University, Ithaca, NY (United States)

    2015-04-01

    In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m?{center_dot}cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW{center_dot}cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

  8. Electrically pumped single-photon emission at room temperature from a single InGaN/GaN quantum dot

    SciTech Connect (OSTI)

    Deshpande, Saniya; Frost, Thomas; Hazari, Arnab; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109 (United States)

    2014-10-06

    We demonstrate a semiconductor quantum dot based electrically pumped single-photon source operating at room temperature. Single photons emitted in the red spectral range from single In{sub 0.4}Ga{sub 0.6}N/GaN quantum dots exhibit a second-order correlation value g{sup (2)}(0) of 0.29, and fast recombination lifetime ?1.3 ±0.3 ns at room temperature. The single-photon source can be driven at an excitation repetition rate of 200?MHz.

  9. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Mingda; Song, Bo; Qi, Meng; Hu, Zongyang; Nomoto, Kazuki; Yan, Xiaodong; Cao, Yu; Johnson, Wayne; Kohn, Erhard; Jena, Debdeep; et al

    2015-02-16

    In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m? · cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW·cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

  10. Phase I remedial investigation report of Waste Area Grouping 2 at Oak Ridge National Laboratory, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Miller, D.E. [ed.

    1995-07-01

    This report presents the activities and findings of the first phase of a three-phase remedial investigation (RI) of Waste Area Grouping (WAG) 2 at Oak Ridge National Laboratory (ORNL) in Oak Ridge, Tennessee, and updates the scope and strategy for WAG-2-related efforts. WAG 2 contains White Oak Creek (WOC) and its tributaries downstream of the ORNL main plant area, White Oak Lake, White Oak Creek Embayment on the Clinch River, and the associated floodplain and subsurface environment. Water, sediment, soil, and biota in WAG 2 are contaminated and continue to receive contaminants from upgradient WAGs. This report includes field activities completed through October 1992. The remediation of WAG 2 is scheduled to follow the cessation of contaminant input from hydrologically upgradient WAGs. While upgradient areas are being remediated, the strategy for WAG 2 is to conduct a long-term monitoring and investigation program that takes full advantage of WAG 2`s role as an integrator of contaminant fluxes from other ORNL WAGs and focuses on four key goals: (1) Implement, in concert with other programs, long-term, multimedia environmental monitoring and tracking of contaminants leaving other WAGs, entering WAG 2, and being transported off-site. (2) Provide a conceptual framework to integrate and develop information at the watershed-level for pathways and processes that are key to contaminant movement, and so support remedial efforts at ORNL. (3) Provide periodic updates of estimates of potential risk (both human health and ecological) associated with contaminants accumulating in and moving through WAG 2 to off-site areas. (4) Support the ORNL Environmental Restoration Program efforts to prioritize, remediate, and verify remedial effectiveness for contaminated sites at ORNL, through long-term monitoring and continually updated risk assessments.

  11. Removal action work plan for the YS-860 Firing Ranges, Oak Ridge Y-12 Plant, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    1998-03-01

    The US Department of Energy is conducting environmental restoration activities at the Y-12 Plant in Oak Ridge, Tennessee. As part of these efforts, a removal action is planned for the former YS-860 Firing Ranges as described in the Action Memorandum for the project. This removal action work plan (RmAWP) is focused on the former YS-860 Firing Ranges, located outside the primary fenceline at the eastern end of the plant. This RmAWP defines the technical approach, procedures, and requirements for the removal of lead-contaminated soil and site restoration of the former YS-860 Firing Ranges at the Y-12 Plant. This RmAWP describes excavation, verification/confirmatory sampling, and reporting requirements for the project. Lower tier plans associated with the RmAWP, which are submitted as separate stand-alone documents, include a field sampling and analysis plan, a health and safety plan, a quality assurance project plan, a waste management plan, a data management implementation plan, and a best management practices plan. A site evaluation of the YS-86O Firing Ranges conducted in 1996 by Lockheed Martin Energy Systems, Inc., determined that elevated lead levels were present in the Firing Ranges target berm soils. The results of this sampling event form the basis for the removal action recommendation as described in the Action Memorandum for this project. This RmAWP contains a brief history and description of the Former YS-860 Firing Ranges Project, along with the current project schedule and milestones. This RmAWP also provides an overview of the technical requirements of the project, including a summary of the approach for the removal activities. Finally, the RmAWP identifies the regulatory requirements and the appropriate removal action responses to address applicable or relevant and appropriate requirements to achieve the project goals of substantially reducing the risk to human health and the environment.

  12. Waste Area Grouping 4 Site Investigation Sampling and Analysis Plan, Oak Ridge National Laboratory, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    NONE

    1994-12-01

    Waste Area Grouping (WAG) 4 is one of 17 WAGs within and associated with Oak Ridge National Laboratory (ORNL), on the Oak Ridge Reservation in Oak Ridge, Tennessee. WAG 4 is located along Lagoon Road south of the main facility at ORNL. WAG 4 is a shallow-waste burial site consisting of three separate areas: (1) Solid Waste Storage Area (SWSA) 4, a shallow-land burial ground containing radioactive and potentially hazardous wastes; (2) an experimental Pilot Pit Area, including a pilot-scale testing pit; and (3) sections of two abandoned underground pipelines formerly used for transporting liquid, low-level radioactive waste. In the 1950s, SWSA 4 received a variety of low-and high-activity wastes, including transuranic wastes, all buried in trenches and auger holes. Recent surface water data indicate that a significant amount of {sup 90}Sr is being released from the old burial trenches in SWSA 4. This release represents a significant portion of the ORNL off-site risk. In an effort to control the sources of the {sup 90}Sr release and to reduce the off-site risk, a site investigation is being implemented to locate the trenches containing the most prominent {sup 90}Sr sources. This investigation has been designed to gather site-specific data to confirm the locations of {sup 90}Sr sources responsible for most off-site releases, and to provide data to be used in evaluating potential interim remedial alternatives prepared to direct the site investigation of the SWSA 4 area at WAG 4.

  13. Results of 1995 characterization of Gunite and Associated Tanks at Oak Ridge National Laboratory, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    NONE

    1996-02-01

    This technical memorandum (TM) documents the 1995 characterization of eight underground radioactive waste tanks at Oak Ridge National Laboratory (ORNL). These tanks belong to the Gunite and Associated Tanks (GAAT) operable unit, and the characterization is part of the ongoing GAAT remedial investigation/feasibility study (RI/FS) process. This TM reports both field observations and analytical results; analytical results are also available from the Oak Ridge Environmental Information System (OREIS) data base under the project name GAAT (PROJ-NAME = GAAT). This characterization effort (Phase II) was a follow-up to the {open_quotes}Phase I{close_quotes} sampling campaign reported in Results of Fall 1994 Sampling of Gunite and Associated Tanks at the Oak Ridge National Laboratory, Oak Ridge, Tennessee, ORNL/ER/Sub/87-99053/74, June 1995. The information contained here should be used in conjunction with that in the previous TM. The sampling plan is documented in ORNL Inactive Waste Tanks Sampling and Analysis Plan, ORNL/RAP/LTR-88/24, dated April 1988, as amended by Addendum 1, Revision 2: ORNL Inactive Tanks Sampling and Analysis Plan, DOE/OR/02-1354&D2, dated February 1995. Field team instructions are found in ORNL RI/FS Project Field Work Guides 01-WG-20, Field Work Guide for Sampling of Gunite and Associated Tanks, and 01-WG-21, Field Work Guide for Tank Characterization System Operations at ORNL. The field effort was conducted under the programmatic and procedural umbrella of the ORNL RI/FS Program, and the analysis was in accordance with ORNL Chemical and Analytical Sciences Division (CASD) procedures. The characterization campaign is intended to provide data for criticality safety, engineering design, and waste management as they apply to the GAAT treatability study and remediation. The Department of Energy (DOE) Carlsbad office was interested in results of this sampling campaign and provided funding for certain additional sample collection and analysis.

  14. Phase I Archaeological Survey of Parcel ED-3 and Historic Assessement of the Happy Valley Worker Camp Roane County, Tennessee

    SciTech Connect (OSTI)

    New South Associates

    2009-08-17

    Parcel ED-3 was the location of a portion of 'Happy Valley', a temporary worker housing area occupied from 1943 to 1947 during the construction of the K-25 Oak Ridge Gaseous Diffusion Plant. The project was carried out under subcontract for the Department of Energy. The survey report will be used in the preparation of an Environmental Assessment under the National Environmental Policy Act (NEPA). New South Associates conducted a Phase I Archaeological Survey of Parcel ED-3 at the US Department of Energy's Oak Ridge Reservation in Roane County, Tennessee. The survey was conducted in two parts. The first survey was carried out in 2008 and covered an area measuring approximately 110 acres. The second survey took place in 2009 and focused on 72 acres west of the first survey area. The objective of the surveys was to identify any archaeological remains associated with Happy Valley and any additional sites on the property and to assess these sites for National Register eligibility. New South Associates also conducted a historic assessment to gather information on Happy Valley. This historic assessment was used in conjunction with the archaeological survey to evaluate the significance of the Happy Valley site. Archaeological remains of Happy Valley were located throughout the parcel, but no additional sites were located. The official state site number for Happy Valley is 40RE577. During the two surveys a total of 13 artifact concentrations, 14 isolated finds, and 75 structural features were located. Due to the Happy Valley's stron gassociation with the Manhattan Project, the site is recommended eligible for the National Register of Historic Places under Criterion A.

  15. Tennessee-Tennessee Natural Gas Plant Processing

    Gasoline and Diesel Fuel Update (EIA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustments (Billion Cubic Feet)DecadeYear Jan3 November18.5 385.5 47,187.8Year Jan Feb Mar340 340 340 340 2011

  16. Theory of weak localization in ferromagnetic (Ga,Mn)As 

    E-Print Network [OSTI]

    Garate, Ion; Sinova, Jairo; Jungwirth, T.; MacDonald, A. H.

    2009-01-01

    We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence-band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find that at Mn...

  17. Low-temperature magnetization of (Ga,Mn) As semiconductors 

    E-Print Network [OSTI]

    Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL.

    2006-01-01

    the semiphenomenological virtual crystal model the valence band holes experience a mean-field hMF =JpdNMn?S , and the band Hamiltonian can then be written as H? MF=H? KL?B?+hMFs?z, where H? KL?B? is the B-dependent six- band Kohn-Luttinger Hamiltonian of the GaAs host...

  18. Ohmic contacts for high-temperature GaP devices 

    E-Print Network [OSTI]

    Van der Hoeven, Willem Bernard

    1981-01-01

    in Table II, heat treatments have also been made by laser. One of the earliest papers that describe laser annealing to obtain ohmic contacts to GaP appeared in 1974 (20] . In this paper, Pounds, Saifi, and Hahm reported to have obtained ohmic contacts...

  19. High-quality InP on GaAs

    E-Print Network [OSTI]

    Quitoriano, Nathaniel Joseph

    2006-01-01

    In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

  20. Nanoscale GaAs metalsemiconductormetal photodetectors fabricated using nanoimprint lithography

    E-Print Network [OSTI]

    ­V) characteristics of the contacts are very sensi- tive to the surface states and defects. In this letter, we report mold with interdigited fin- gers was first created on a silicon substrate. Next, a layer of polymethylmethancrylate PMMA was spun on a semi- insulating SI GaAs substrate. Before imprinting, both the mold

  1. Properties of H, O and C in GaN

    SciTech Connect (OSTI)

    Pearton, S.J.; Abernathy, C.R.; Lee, J.W.

    1996-04-01

    The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

  2. Luminescence properties of defects in GaN

    SciTech Connect (OSTI)

    Reshchikov, Michael A.; Morkoc, Hadis [Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)

    2005-03-15

    Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects (vacancies, interstitial, and antisites), intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of other impurities, such as C, Si, H, O, Be, Mn, Cd, etc., on the luminescence properties of GaN are also reviewed. Further, atypical luminescence lines which are tentatively attributed to the surface and structural defects are discussed. The effect of surfaces and surface preparation, particularly wet and dry etching, exposure to UV light in vacuum or controlled gas ambient, annealing, and ion implantation on the characteristics of the defect-related emissions is described.

  3. Testing a GaAs cathode in SRF gun

    SciTech Connect (OSTI)

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-03-28

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating gradient of the RF guns, potentially offering a long lived cathode with very low emittance. Testing this concept requires preparation of the cathode, transportation to the SRF gun and evaluation of the performance of the cathode and the gun at cryogenic temperatures. In our work at BNL, we successfully activated the bulk GaAs in the preparation chamber. The highest quantum efficient was 10% at 532 nm that fell to 0.5% after 100 hours. We explored three different ways to activate the GaAs. We verified that the GaAs photocathode remains stable for 30 hours in a 10{sup -11} Torr vacuum. Passing the photocathode through the low 10{sup -9} Torr transfer section in several seconds caused the QE to drop to 0.8%. The photocathode with 0.8% QE can be tested for the SRF gun. The gun and beam pipe were prepared and assembled. After baking at 200 C baking, the vacuum of the gun and beam pipe can sustain a low 10{sup -11} Torr at room temperature. The final test to extract electrons from the gun is ongoing. In this paper, we discuss our progress with this SRF gun and the results of the photocathode in preparation chamber and in magnet transfer line.

  4. Quaternary InGaAsSb Thermophotovoltaic Diodes

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  5. Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes

    SciTech Connect (OSTI)

    Zhou, Kun; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Liu, Jianping, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Zhang, Shuming; Li, Deyao; Zhang, Liqun; Yang, Hui [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Cai, Jin; Wang, Hui; Wang, H. B. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Suzhou Nanojoin Photonics Co., Ltd., Suzhou (China)

    2014-10-27

    The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3?nm–6?nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200?A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelength we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.

  6. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.

    SciTech Connect (OSTI)

    Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

    2012-03-01

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

  7. H1N1 (swine flu) Information for Students, Faculty & Staff There have been confirmed H1N1 cases and a death in Tennessee. The Center for Disease Control (CDC)

    E-Print Network [OSTI]

    Karsai, Istvan

    virus causing illness in people. This new virus was first detected in people in the United States, in the United States, on average 36,000 people die from flu-related complications and more than 200,000 people and a death in Tennessee. The Center for Disease Control (CDC) reports that H1N1 is contagious

  8. Finding of no significant impact: Changes in the sanitary sludge land application program on the Oak Ridge Reservation, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    NONE

    1996-10-01

    The U.S. Department of Energy (DOE) has completed an environmental assessment (DOE/EA-1042) that evaluates potential impacts of proposed changes in the sanitary sludge land application program on the DOE Oak Ridge Reservation (ORR), Oak Ridge, Tennessee. Changes in lifetime sludge land application limits and radionuclide loading are proposed, and two new sources of sewage sludge from DOE facilities would be transported to the City of Oak Ridge Publicly Owned Treatment Works (COR POTW). Lifetime sludge land application limits would increase from 22 tons/acre to 50 tons/acre, which is the limit approved and permitted by the Tennessee Department of Environment and Conservation (TDEC). With the approval of TDEC, the permissible radiological dose from sludge land application would change from the current limit of 2x background radionuclide concentrations in receiving soils to a risk-based dose limit of 4 millirem (mrem) per year for the maximally exposed individual. Sludge land application sites would not change from those that are currently part of the program. Based on the results of the analysis reported in the EA, DOE has determined that the proposed action is not a major federal action that would significantly affect the quality of the human environment within the context of the National Environmental Policy Act of 1969 (NEPA). Therefore, preparation of an environmental impact statement (EIS) is not necessary, and DOE is issuing this Finding of No Significant Impact (FONSI). 70 refs., 2 figs., 17 tabs.

  9. Nonlinear Terahertz Metamaterials via Field-Enhanced Carrier Dynamics in GaAs

    E-Print Network [OSTI]

    Fan, Kebin

    We demonstrate nonlinear metamaterial split ring resonators (SRRs) on GaAs at terahertz frequencies. For SRRs on doped GaAs films, incident terahertz radiation with peak fields of ?20–160??kV/cm drives intervalley scattering. ...

  10. Device-level thermal analysis of GaN-based electronics

    E-Print Network [OSTI]

    Bagnall, Kevin Robert

    2013-01-01

    Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

  11. Light extraction in individual GaN nanowires on Si for LEDs

    E-Print Network [OSTI]

    Zhou, Xiang

    GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

  12. Inves&ga&ng the Trade-Off between Luminous Efficacy of Radia&on

    E-Print Network [OSTI]

    California at Davis, University of

    Inves&ga&ng the Trade-Off between Luminous Efficacy of Radia&on and Color, Canada · Lorne Whitehead, Canada #12;Inves&ga&ng the Trade-Off between Luminous

  13. Characterization of NIR InGaAs imager arrays for the JDEM SNAP mission concept

    E-Print Network [OSTI]

    2006-01-01

    Characterization of NIR InGaAs imager arrays for the JDEMapplications. Keywords: NIR, InGaAs, astronomy, low-1.7um band Near Infrared (NIR) focal plane mosaic with high

  14. Atomic structure of postgrowth annealed epitaxial Fe/(001)GaAs interfaces

    E-Print Network [OSTI]

    LeBeau, James; Hu, Qi O.; Palmstrom, Christopher; Stemmer, Susanne

    2008-01-01

    line pro?le across the interface along the line indicated inHAADF images of the GaAs/Fe interface along ?a? ?11 0? GaAsindicates the location of an interface step. Arrows in ?b?

  15. Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Bia?ek, M. Witowski, A. M.; Grynberg, M.; ?usakowski, J.; Orlita, M.; Potemski, M.; Czapkiewicz, M.; Umansky, V.

    2014-06-07

    In order to characterize magnetic field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the magnetoplasmon resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.

  16. On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Gao, Feng; Chen, Di; Tuller, Harry L.; Thompson, Carl V.; Palacios, Tomás

    2014-03-28

    Water-related redox couples in ambient air are identified as an important source of the surface trapping states, dynamic on-resistance, and drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). Through in-situ X-ray photoelectron spectroscopy (XPS), direct signature of the water-related species—hydroxyl groups (OH) was found at the AlGaN surface at room temperature. It was also found that these species, as well as the current collapse, can be thermally removed above 200?°C in vacuum conditions. An electron trapping mechanism based on the H{sub 2}O/H{sub 2} and H{sub 2}O/O{sub 2} redox couples is proposed to explain the 0.5?eV energy level commonly attributed to the surface trapping states. Finally, the role of silicon nitride passivation in successfully removing current collapse in these devices is explained by blocking the water molecules away from the AlGaN surface.

  17. High 400?°C operation temperature blue spectrum concentration solar junction in GaInN/GaN

    SciTech Connect (OSTI)

    Zhao, Liang; Detchprohm, Theeradetch; Wetzel, Christian

    2014-12-15

    Transparent wide gap junctions suitable as high temperature, high flux topping cells have been achieved in GaInN/GaN by metal-organic vapor phase epitaxy. In structures of 25 quantum wells (QWs) under AM1.5G illumination, an open circuit voltage of 2.1?V is achieved. Of the photons absorbed in the limited spectral range of <450?nm, 64.2% are converted to electrons collected at the contacts under zero bias. At a fill factor of 45%, they account for a power conversion efficiency of38.6%. Under concentration, the maximum output power density per sun increases from 0.49?mW/cm{sup 2} to 0.51?mW/cm{sup 2} at 40?suns and then falls 0.42?mW/cm{sup 2} at 150?suns. Under external heating, a maximum of 0.59?mW/cm{sup 2} is reached at 250?°C. Even at 400?°C, the device is fully operational and exceeds room temperature performance. A defect analysis suggests that significantly higher fill factors and extension into longer wavelength ranges are possible with further development. The results prove GaInN/GaN QW solar junctions a viable and rugged topping cell for concentrator photovoltaics with minimal cooling requirements. By capturing the short range spectrum, they reduce the thermal load to any conventional cells stacked behind.

  18. Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1

    E-Print Network [OSTI]

    quantum wells (QW)s,1) and InAs quantum dots at 1.3 mm2) have brought about the commercialization of Ga differential quantum efficiency, T-zero and far field as a function of stripe width. # 2009 The Japan Society offer a number of advantages over their InP counterparts, namely the use of larger substrates (>3 in

  19. Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1

    E-Print Network [OSTI]

    Lu, Wei

    quantum dots by low-energy ion sputtering on a surface has been reported in several semiconductor sys quantum dots on the surface. The mechanism involves the balance between roughening and smoothing actions], Ge [10], as well as a variety of III­V compounds (GaSb [11], InP [12], and InSb [13]) can form

  20. Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Lin, Jie; Llopis, Antonio; Krokhin, Arkadii; Neogi, Arup, E-mail: arup@unt.edu [Department of Physics, University of North Texas, Denton, Texas 76203 (United States); Pereira, Sergio [CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Watson, Ian M. [SUPA, Institute of Photonics, University of Strathclyde, Glasgow (United Kingdom)

    2014-06-16

    The light enhancement phenomena in InGaN/GaN multi-quantum wells (MQWs) infiltrated with metal nanoparticles (NPs) are studied using resonant and off-resonant localized plasmon interactions. The emission and recombination characteristics of carriers in InGaN/GaN MQW structures with inverted hexagonal pits (IHPs) are modified distinctly depending on the nature of their interaction with the metal NPs and with the pumping and emitted photons. It is observed that the emission intensity of light is significantly enhanced when the emission energy is off-resonant to the localized plasmon frequency of the metal nanoparticles. This results in enhanced emission from MQW due to Au nanoparticles and from IHPs due to Ag nanoparticles. At resonant-plasmon frequency of the Ag NPs, the emission from MQWs is quenched due to the re-absorption of the emitted photons, or due to the drift carriers from c-plane MQWs towards the NPs because of the Coulomb forces induced by the image charge effect.

  1. Southface Energy Institute: Advanced Commercial Buildings Initiative...

    Energy Savers [EERE]

    Fund - Atlanta, GA - Oak Ridge National Laboratory - Oak Ridge, TN - Acuity Brands Lighting - Atlanta, GA - Vermont Energy Investment Corp - Burlington, VT - Georgia Power-...

  2. Molecular Dynamics Simulation of GaAs Molecular Beam Epitaxy D. A. Murdick,1

    E-Print Network [OSTI]

    Wadley, Haydn

    of Virginia, Charlottesville, Virginia 22904, USA 2 Department of Materials, University of Oxford, Oxford OX1 3PH, UK ABSTRACT The vapor deposition of epitaxial GaAs and (Ga,Mn)As thin films during far-temperature growth of Ga0.94Mn0.06As and the Mn clustering trends in as-grown films. INTRODUCTION GaAs is widely used

  3. GaN Initiative for Grid Applications (GIGA)

    SciTech Connect (OSTI)

    Turner, George

    2015-07-03

    For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 ?m, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and vertical devices were explored, with the conclusion that lateral devices are superior for fundamental thermal reasons, as well as for the demonstration of future generations of monolithic power circuits. As part of the materials and device investigations breakdown mechanisms in GaN-on-Si structures were fully characterized and effective electric field engineering was recognized as critical for achieving even higher voltage operation. Improved device contact technology was demonstrated, including the first gold-free metallizations (to enable processing in CMOS foundries) while maintaining low specific contact resistance needed for high-power operation and 5-order-of magnitude improvement in device leakage currents (essential for high power operation). In addition, initial GaN-on-Si epitaxial growth was performed on 8”/200 mm Si starting substrates.

  4. DISSERTATION ANTICIPATED PERFORMANCE OF Cu(In,Ga)Se2 SOLAR CELLS IN THE

    E-Print Network [OSTI]

    Sites, James R.

    i DISSERTATION ANTICIPATED PERFORMANCE OF Cu(In,Ga)Se2 SOLAR CELLS IN THE THIN-FILM LIMIT Submitted ENTITLED `ANTICIPATED PERFORMANCE OF Cu(In,Ga)Se2 SOLAR CELLS IN THE THIN-FILM LIMIT' BE ACCEPTED(In,Ga)Se2 SOLAR CELLS IN THE THIN-FILM LIMIT The demand for alternative sources of energy is rapidly

  5. TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron

    E-Print Network [OSTI]

    neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

  6. Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a

    E-Print Network [OSTI]

    Okamoto, Koichi

    is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

  7. Near perfect solar absorption in ultra-thin-film GaAs photonic crystals

    E-Print Network [OSTI]

    John, Sajeev

    Near perfect solar absorption in ultra-thin-film GaAs photonic crystals Sergey Eyderman,*a Alexei voltage of GaAs solar cells. The current world record for high efficiency solar cells is held by thin ultra-thin (GaAs in low-cost solar cells. However, this reduction in the volume

  8. ORIGINAL ARTICLE Highly efficient GaAs solar cells by limiting light emission

    E-Print Network [OSTI]

    Polman, Albert

    a non-concentrating system with limited emission angle in a thin, light trapping GaAs solar cellORIGINAL ARTICLE Highly efficient GaAs solar cells by limiting light emission angle Emily D Kosten1 of a high-quality GaAs solar cell is a feasible route to achieving power conversion efficiencies above 38

  9. Inversion of wurtzite GaN(0001) by exposure to V. Ramachandran and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    in the growth rate of GaN on different crystallographic planes [8], pointing to a surfactant effect of Mg on Ga in these films and the carrier concentration was therefore very low [1,2]; dopant activa- tion can be achieved of Mg at GaN growth temperatures is an issue and dopant in- corporation may be rather inefficient [5

  10. Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    SciTech Connect (OSTI)

    Cheng, Junjie; Li, Jiadong; Miao, Bin; Wu, Dongmin; Wang, Jine; Pei, Renjun; Wu, Zhengyan

    2014-08-25

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup ?14} to 10{sup ?8} M and a detection limit below 10{sup ?14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

  11. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992

    SciTech Connect (OSTI)

    Venkatasubramanian, R.

    1993-01-01

    This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The ``cycled`` organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al{sub 0.34}Ga{sub 0.66}As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  12. Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

    SciTech Connect (OSTI)

    Sundaram, S.; El Gmili, Y.; Bonanno, P. L. [CNRS, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Puybaret, R.; Li, X.; Voss, P. L.; Ougazzaden, A. [Georgia Institute of Technology, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Pantzas, K.; Patriarche, G. [CNRS, UPR LPN, Route de Nozay, 91460 Marcoussis (France); Orsal, G.; Salvestrini, J. P., E-mail: salvestr@metz.supelec.fr [Université de Lorraine, Supélec, LMOPS, EA4423, 57070 Metz (France); Troadec, D. [Université des Sciences et Technologies de Lille, CNRS, UMR 8520 IEMN, 59000 Lille (France); Cai, Z.-H. [Advanced Photon Source, 9700 S. Cass Avenue, Argonne, Illinois 60439 (United States)

    2014-10-28

    Uniform, dense, single-phase, 150?nm thick indium gallium nitride (InGaN) nanostructure (nanorods and nanostripes) arrays have been obtained on gallium nitride templates, by metal organic chemical vapor deposition and nanoscale selective area growth on silicon dioxide patterned masks. The 150?nm thick InGaN nanorods have a perfect hexagonal pyramid shape with relatively homogenous indium concentration up to 22%, which is almost twice as high as in planar InGaN grown in the same condition, and luminesce at 535?nm. InGaN nanostripes feature c-axis oriented InGaN in the core which is covered by InGaN grown along semi-polar facets with higher In content. Transmission electron microscope and sub micron beam X-rays diffraction investigations confirm that both InGaN nanostructures are mostly defect free and monocrystalline. The ability to grow defect-free thick InGaN nanostructures with reduced polarization and high indium incorporation offers a solution to develop high efficiency InGaN-based solar cells.

  13. Precambrian Research 200203 (2012) 82103 Contents lists available at SciVerse ScienceDirect

    E-Print Network [OSTI]

    Perfect, Ed

    2012-01-01

    Sciences, University of Tennessee, Knoxville, TN 37996, United States b Department of Geology, Gustavus of the Atar/El Mreiti groups, Taoudeni Basin, Mauritania, are characterized by car- bon isotope values

  14. A non-standard course for future High School mathematics teachers Michel Helfgott

    E-Print Network [OSTI]

    Spagnolo, Filippo

    of Mathematics, East Tennessee State University, Johnson City, TN 37614, USA helfgott@etsu.edu Abstract A course at ETSU offers the mathematics education track, which requires passing sixteen mathematics courses

  15. "Title","Creator/Author","Publication Date","OSTI Identifier...

    Office of Scientific and Technical Information (OSTI)

    Toward a new metric for ranking high performance computing systems.","Heroux, Michael Allen; Dongarra, Jack. University of Tennessee, Knoxville, TN","2013-06-01T04:00:00Z",108998...

  16. NUMERICAL SIMULATION OF ELECTROMECHANICAL DYNAMICS IN PACED CARDIAC TISSUE Xiaopeng Zhao

    E-Print Network [OSTI]

    Zhao, Xiaopeng

    NUMERICAL SIMULATION OF ELECTROMECHANICAL DYNAMICS IN PACED CARDIAC TISSUE Henian Xia Xiaopeng Zhao of Tennessee Knoxville, TN 37996 kwong@utk.edu ABSTRACT We study electromechanical dynamics in paced cardiac physics fields are integrated, including electrophysiology, electromechanics, and mechanoelectrical

  17. November 20, 2001 Evolutionary Genetics

    E-Print Network [OSTI]

    Gavrilets, Sergey

    November 20, 2001 Evolutionary Genetics (for Encyclopedia of Biodiversity) Sergey Gavrilets Departments of Ecology and Evolutionary Biology and Mathematics, University of Tennessee, Knoxville, TN 37996- tionary change. Because biological diversity at all levels (including population, species, and ecosystem

  18. Composites World 2013 | ornl.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    CW 2013 Oct 25 2013 12:00 AM - 04:00 PM Composites World - Carbon Fiber Knoxville, Tennessee Crowne Plaza Knoxville 401 W. Summit Hill Dr., Knoxville, TN 37902 CONTACT : Email:...

  19. COMPARISON OF RESULTS FOR QUARTER 3 SURFACE WATER SPLIT SAMPLES COLLECTED AT THE NUCLEAR FUEL SERVICES SITE, ERWIN, TENNESSEE

    SciTech Connect (OSTI)

    none,

    2013-05-28

    Oak Ridge Associated Universities (ORAU), under the Oak Ridge Institute for Science and Education (ORISE) contract, collected split surface water samples with Nuclear Fuel Services (NFS) representatives on March 20, 2013. Representatives from the U.S. Nuclear Regulatory Commission and the Tennessee Department of Environment and Conservation were also in attendance. Samples were collected at four surface water stations, as required in the approved Request for Technical Assistance number 11-018. These stations included Nolichucky River upstream (NRU), Nolichucky River downstream (NRD), Martin Creek upstream (MCU), and Martin Creek downstream (MCD). Both ORAU and NFS performed gross alpha and gross beta analyses, and Table 1 presents the comparison of results using the duplicate error ratio (DER), also known as the normalized absolute difference. A DER {<=} 3 indicates that at a 99% confidence interval, split sample results do not differ significantly when compared to their respective one standard deviation (sigma) uncertainty (ANSI N42.22). The NFS split sample report does not specify the confidence level of reported uncertainties (NFS 2013). Therefore, standard two sigma reporting is assumed and uncertainty values were divided by 1.96. In conclusion, most DER values were less than 3 and results are consistent with low (e.g., background) concentrations. The gross beta result for sample 5198W0012 was the exception. The ORAU result of 9.23 ± 0.73 pCi/L from location MCD is well above NFS's result of -0.567 ± 0.63 pCi/L (non-detected). NFS's data package included a detected result for U-233/234, but no other uranium or plutonium detection, and nothing that would suggest the presence of beta-emitting radionuclides. The ORAU laboratory reanalyzed sample 5198W0012 using the remaining portion of the sample volume and a result of 11.3 ± 1.1 pCi/L was determined. As directed, the laboratory also counted the filtrate using gamma spectrometry analysis and identified only naturally occurring or ubiquitous man-made constituents, including beta emitters that are presumably responsible for the elevated gross beta values.

  20. Method of plasma etching GA-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2013-01-01

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

  1. Method of plasma etching Ga-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  2. AlGaAs-On-Insulator Nonlinear Photonics

    E-Print Network [OSTI]

    Pu, Minhao; Semenova, Elizaveta; Yvind, Kresten

    2015-01-01

    The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement. Efficient nonlinear photonic chips have myriad applications including high speed optical signal processing, on-chip multi-wavelength lasers, metrology, molecular spectroscopy, and quantum information science. Aluminium gallium arsenide (AlGaAs) exhibits very high material nonlinearity and low nonlinear loss when operated below half its bandgap energy. However, difficulties in device processing and low device effective nonlinearity made Kerr frequency comb generation elusive. Here, we demonstrate AlGaAs-on-insulator as a nonlinear platform at telecom wavelengths. Using newly developed fabrication processes, we show high-quality-factor (Q>100,000) micro-resonators with integrated bus waveguides in a planar circuit where optical parametric oscillation is achieved with a record low threshold power of 3 mW and a frequency comb spanning 350 nm i...

  3. Formation and properties of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Lockwood, D.J.; Fraser, J.W.; Graham, M.J.; Isaacs, H.S.

    1996-06-01

    Porous structures on n-type GaAs (100) can be grown electrochemically in chloride-containing solutions. Crystallographic etching of the sample is a precursor stage of the attack. Polarization curves reveal the existanece of a critical onset potential for por formation (PFP). PFP is strongly dependent on the doping level of the sample and presence of surface defects. Good agreement between PFP and breakdown voltage of the space charge layer is found. Surface analysis by EDX, AES, and XPS show that the porous structure consists mainly of GaAs and that anion uptake in the structure can only observed after attackhas been initiated. Photoluminescence measurements reveal (under certain conditions) visible light emission from the porous structure.

  4. Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    to be further improved in order for the high- power LEDs to penetrate into the consumer market of gen- eral to higher optical output power and external quantum efficiency, compared to the devices with p-AlGaN EBLGaN/GaN based light-emitting diodes (LEDs) possess unique advantages including high energy conversion effi

  5. The transputer based GA. SP data acquisition system

    SciTech Connect (OSTI)

    Colombo, D.; Avano, B.; DePoli, M.; Maron, G. ); Negro, A.; Parlati, G. )

    1992-04-01

    In this paper, the new data acquisition for the GA.SP detector is presented. It is a distributed system based on a network of 40 T800 and T222 transputers linked to a VME system used for histogram storage. A 100 MBit/s FDDI ring connects the system to UNIX workstations used for the experiment control, histogram display and second level data analysis.

  6. Minority-carrier properties of GaAs on silicon

    SciTech Connect (OSTI)

    Ahrenkiel, R.K.; Al-Jassim, M.M.; Dunlavy, D.J.; Jones, K.M.; Vernon, S.M.; Tobin, S.P.; Haven, V.E.

    1988-07-18

    The minority-carrier lifetimes of the heteroepitaxial system of GaAs on Si are limited by recombination at mismatch dislocations. Here we show that increasing the thickness of the buffer layer, with an additional annealing step, reduces the dislocation density by about an order of magnitude. At the same time, the minority-carrier lifetime in these double heterostructures increases more than an order of magnitude.

  7. Ohmic contacts to p-type Ga

    E-Print Network [OSTI]

    Jorge Estevez, Humberto Angel

    1996-01-01

    resistivity was achieved by developing the Si(750A)/Pd(400A)/Zn(xA)/Pd(IOOA)/p-GaP scheme. Values of the contact resistivity in the range of 3xlO-5 to 7xlO-' nCM2 were obtained. It was found that the optimum Zn layer thickness is 30 A for the Pd and Si...

  8. Conductivity based on selective etch for GaN devices and applications thereof

    DOE Patents [OSTI]

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  9. Continued development of metallization for GaAs concentrator cells

    SciTech Connect (OSTI)

    Tobin, S.P.

    1988-11-01

    The objective of this work was the integration of thermally stable metallizations with a high-efficiency GaAs concentrator cell process. For p-GaAs we used a Pt-TiN-Au metallization developed under a previous Sandia Contract. For n-GaAs the best results were obtained for AuGe-TiN-Au. Baseline p/n cells with a CrAu metallization achieved efficiencies of 25.4% at 200 suns. Efficiencies were about 22% at one sun. At one sun, p/n cells with high-temperature contacts were 22.2% efficient, showing that there is no efficiency penalty with the high-temperature metallization. Development efforts on n/p cells yielded high short-circuit currents and open-circuit voltages, with both conventional and high-temperature metallizations. Thermal annealing tests showed that cells with the Pt-TiN-Au metallization were more stable than those with the baseline metallization, withstanding a 15-minute anneal at 500/degree/C with negligible efficiency degradation. 22 refs., 64 figs., 54 tabs.

  10. InGaAsSb thermophotovoltaic diode physics evaluation

    SciTech Connect (OSTI)

    Charache, G.W.; Baldasaro, P.F.; Danielson, L.R. [Lockheed-Martin, Inc., Schenectady, NY (United States)] [and others

    1998-06-01

    The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1,000 C, which sets an upper limit on the TPV diode bandgap of 0.6 eV from efficiency and power density considerations. This bandgap requirement has necessitated the development of new diode material systems, never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice-matched on GaSb substrates have achieved the highest performance. This report relates observed diode performance to electro-optic properties such as minority carrier lifetime, diffusion length and mobility and provides initial links to microstructural properties. This analysis has bounded potential diode performance improvements. For the 0.52 eV InGaAsSb diodes used in this analysis the measured dark current is 2 {times} 10{sup {minus}5} A/cm{sup 2}, versus a potential Auger limit 1 {times} 10{sup {minus}5} A/cm{sup 2}, a radiative limit of 2 {times} 10{sup {minus}6} A/cm{sup 2} (no photon recycling), and an absolute thermodynamic limit of 1.4 {times} 10{sup {minus}7} A/cm{sup 2}. These dark currents are equivalent to open circuit voltage gains of 20 mV (7%), 60 mV (20%) and 140 mV (45%), respectively.

  11. Ga lithography in sputtered niobium for superconductive micro and nanowires

    SciTech Connect (OSTI)

    Henry, M. David; Wolfley, Steve; Monson, Todd; Lewis, Rupert

    2014-08-18

    This work demonstrates the use of focused ion beam (FIB) implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12?nm deep with a 14?nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10??m by 10??m and 100??m by 100??m, demonstrate that doses above than 7.5?×?10{sup 15?}cm{sup ?2} at 30?kV provide adequate mask protection for a 205?nm thick, sputtered Nb film. The resolution of this dry lithographic technique is demonstrated by fabrication of nanowires 75?nm wide by 10??m long connected to 50??m wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature (T{sub c})?=?7.7?K was measured using a magnetic properties measurement system. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.

  12. Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates

    SciTech Connect (OSTI)

    Bengoechea-Encabo, A.; Albert, S.; Barbagini, F.; Sanchez-Garcia, M. A.; Calleja, E. [ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n 28040 Madrid (Spain)] [ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n 28040 Madrid (Spain); Zuñiga-Perez, J.; Mierry, P. de [CRHEA-CNRS, 06560 Valbonne (France)] [CRHEA-CNRS, 06560 Valbonne (France); Trampert, A. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)] [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2013-12-09

    The aim of this work is the selective area growth (SAG) of GaN nanocolumns, with and without an InGaN insertion, by molecular beam epitaxyon semi-polar (11–22) GaN templates. The high density of stacking faults present in the template is strongly reduced after SAG. A dominant sharp photoluminescence emission at 3.473 eV points to high quality strain-free material. When embedding an InGaN insertion into the ordered GaN nanostructures, very homogeneous optical properties are observed, with two emissions originating from different regions of each nanostructure, most likely related to different In contents on different crystallographic planes.

  13. Gallium hole traps in irradiated KTiOPO{sub 4}:Ga crystals

    SciTech Connect (OSTI)

    Grachev, V.; Meyer, M.; Malovichko, G.; Hunt, A. W.

    2014-12-07

    Nominally pure and gallium doped single crystals of potassium titanyl phosphate (KTiOPO{sub 4}) have been studied by Electron Paramagnetic Resonance at low temperatures before and after irradiation. Irradiation with 20?MeV electrons performed at room temperature and liquid nitrogen temperature caused an appearance of electrons and holes. Gallium impurities act as hole traps in KTiOPO{sub 4} creating Ga{sup 4+} centers. Two different Ga{sup 4+} centers were observed, Ga1 and Ga2. The Ga1 centers are dominant in Ga-doped samples. For the Ga1 center, a superhyperfine structure with one nucleus with nuclear spin ½ was registered and attributed to the interaction of gallium electrons with a phosphorus nucleus or proton in its surrounding. In both Ga1 and Ga2 centers, Ga{sup 4+} ions substitute for Ti{sup 4+} ions, but with a preference to one of two electrically distinct crystallographic positions (site selective substitution). The Ga doping eliminates one of the shortcomings of KTP crystals—ionic conductivity of bulk crystals. However, this does not improve significantly the resistance of the crystals to electron and ?-radiation.

  14. Efficiency calculations of thin-film GaAs solar cells on Si substrates

    SciTech Connect (OSTI)

    Yamaguchi, M.; Amano, C.

    1985-11-01

    Dislocation effect upon the efficiency of single-crystal thin-film AlGaAs-GaAs heteroface solar cells on Si substrates is analyzed. Solar-cell properties are calculated based on a simple model; in the model, dislocations act as recombination centers to reduce the minority-carrier diffusion length in each layer and increase the space-charge layer recombination current. Numerical analysis is also carried out to optimize thin-film AlGaAs-GaAs heteroface solar-cell structures. The fabrication of thin-film AlGaAs-GaAs heteroface solar cells with a practical efficiency larger than 18% on Si substrates appears possible if the dislocation density in the thin-film GaAs layer is less than 10/sup 6/ cm/sup -2/.

  15. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

    SciTech Connect (OSTI)

    Young, Erin C.; Wu Feng; Haeger, Daniel A.; Nakamura, Shuji; Denbaars, Steven P.; Cohen, Daniel A.; Speck, James S.; Romanov, Alexey E.

    2012-10-01

    In this Letter, we report on the growth and properties of relaxed, compositionally graded Al{sub x}Ga{sub 1-x}N buffer layers on freestanding semipolar (2021) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10{sup 6}/cm{sup 2} as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

  16. Electron heating due to microwave photoexcitation in the high mobility GaAs/AlGaAs two dimensional electron system

    SciTech Connect (OSTI)

    Ramanayaka, A. N.; Mani, R. G.; Wegscheider, W.

    2013-12-04

    We extract the electron temperature in the microwave photo-excited high mobility GaAs/AlGaAs two dimensional electron system (2DES) by studying the influence of microwave radiation on the amplitude of Shubnikov-de Haas oscillations (SdHOs) in a regime where the cyclotron frequency, ?{sub c}, and the microwave angular frequency, ?, satisfy 2? ? ?{sub c} ? 3.5? The results indicate that increasing the incident microwave power has a weak effect on the amplitude of the SdHOs and therefore the electron temperature, in comparison to the influence of modest temperature changes on the dark-specimen SdH effect. The results indicate negligible electron heating under modest microwave photo-excitation, in good agreement with theoretical predictions.

  17. Origin of radiative recombination and manifestations of localization effects in GaAs/GaNAs core/shell nanowires

    SciTech Connect (OSTI)

    Chen, S. L.; Filippov, S.; Chen, W. M.; Buyanova, I. A.; Ishikawa, Fumitaro

    2014-12-22

    Radiative carrier recombination processes in GaAs/GaNAs core/shell nanowires grown by molecular beam epitaxy on a Si substrate are systematically investigated by employing micro-photoluminescence (?-PL) and ?-PL excitation (?-PLE) measurements complemented by time-resolved PL spectroscopy. At low temperatures, alloy disorder is found to cause localization of photo-excited carriers leading to predominance of optical transitions from localized excitons (LE). Some of the local fluctuations in N composition are suggested to lead to strongly localized three-dimensional confining potential equivalent to that for quantum dots, based on the observation of sharp and discrete PL lines within the LE contour. The localization effects are found to have minor influence on PL spectra at room temperature due to thermal activation of the localized excitons to extended states. Under these conditions, photo-excited carrier lifetime is found to be governed by non-radiative recombination via surface states which is somewhat suppressed upon N incorporation.

  18. Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces

    SciTech Connect (OSTI)

    Li, Huijie E-mail: sh-yyang@semi.ac.cn; Zhao, Guijuan; Liu, Guipeng; Wei, Hongyuan; Jiao, Chunmei; Yang, Shaoyan E-mail: sh-yyang@semi.ac.cn; Wang, Lianshan; Zhu, Qinsheng

    2014-05-21

    One dimensional electron gas (1DEG) arrays in vicinal GaN/AlGaN heterostructures have been studied. The steps at the interface would lead to the lateral barriers and limit the electron movement perpendicular to such steps. Through a self-consistent Schrödinger-Poisson approach, the electron energy levels and wave functions were calculated. It was found that when the total electron density was increased, the lateral barriers were lowered due to the screening effects by the electrons, and the electron gas became more two-dimension like. The calculated 1DEG densities were compared to the experimental values and good agreements were found. Moreover, we found that a higher doping density is more beneficial to form 1-D like electron gas arrays.

  19. Terrestrial Concentrator PV Modules Based on GaInP/GaAs/Ge TJ Cells and Minilens Panels

    SciTech Connect (OSTI)

    Rumyantsev, V. D.; Sadchikov, N. A.; Chalov, A. E.; Ionova, E. A.; Friedman, D. J.; Glenn, G.

    2006-01-01

    This paper is a description of research activity in the field of cost-effective modules realizing the concept of very high solar concentration with small-aperture area Fresnel lenses and multijunction III-V cells. Structural simplicity and 'all-glass' design are the guiding principles of the corresponding development. The advanced concentrator modules are made with silicone Fresnel lens panels (from 8 up to 144 lenses, each lens is 4 times 4 cm{sup 2} in aperture area) with composite structure. GaInP/GaAs/Ge triple-junction cells with average efficiencies of 31.1 and 34.7% at 1000 suns were used for the modules. Conversion efficiency as high as 26.3% has been measured indoors in a test module using a newly developed large-area solar simulator.

  20. A hole accelerator for InGaN/GaN light-emitting diodes Zi-Hui Zhang, Wei Liu, Swee Tiam Tan, Yun Ji, Liancheng Wang, Binbin Zhu, Yiping Zhang, Shunpeng Lu,

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    GaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, the effectiveness of the hole ac- celerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED. VC 2014 AIP Publishing LLC. [http://dx.doi.org/10