Sample records for ga tennessee tn

  1. Explosive Demolition of a Fire-Water Tower At East Tennessee Technology Park, Oak Ridge TN

    SciTech Connect (OSTI)

    Brooksbank, R.D.; Rood, M.S.; Amrit, S.K.; Harper, M.S.; Dypolt, D.J.; Brehse, Mike [Bechtel Jacobs Company LLC, P.O. Box 4699 Oak Ridge, TN 37931 (United States)

    2008-01-15T23:59:59.000Z

    On June 17, 2006, the Department of Energy (DOE) successfully demolished a {approx}60 year old fire-water tower (K-1206-E), located at the East Tennessee Technology Park (ETTP) in Oak Ridge, TN, using strategically placed explosive charges. The subject demolition project was executed by MCM Management Corporation and Demolition Dynamics under the management of DoE's prime contractor Bechtel Jacobs Company LLC (BJC). The K-1206-E Fire Water Tower (Tower) supported the ETTP fire water protection system from the mid- 1950's until 1991. The 378,500-L (100,000-gallon) Tower, elevated 53-m (175-feet) above grade, was located in a grassy area within 152-m (500-feet) of several other occupied facilities. Electrical, control circuits and supply water servicing the Tower were deactivated in 2003. Free liquids and sludge were removed from the tank prior to demolition. Demolition of a facility employing explosive demolition at a federal site in the 'post-9/11 era' was a substantial challenge. The subject paper discusses: - the planning and coordination steps that were taken to successfully overcome the challenges prior to the demolition of the empty, deactivated Tower; - the method used for the engineered demolition of the Tower; and - the factors responsible for the successful execution of this demolition project. At least two previous attempts were made to demolish the Tower. In the first attempt, the execution of the project was deferred by the re-allocation of funds. In the subsequent attempt in 2004, the execution of this project was postponed due to concerns that an adjacent facility would have to shut down operations during the duration of mobilization and execution of the project and thereby incur potential financial losses. A total of 51 cubic meters (1,800 cubic feet) of demolition debris was generated, which was compliantly disposed of at a local landfill followed by site restoration.

  2. TEAM CUMBERLAND Tennessee Valley Authority 400 West Summit Hill Drive, Knoxville, TN 37902

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn April 23, 2014,ZaleskiThis Decision considers an Appeal ofIn1097 - InTennessee Valley

  3. THE UNIVERSITY Of TENNESSEE Health Science Center

    E-Print Network [OSTI]

    Cui, Yan

    THE UNIVERSITY Of TENNESSEE Health Science Center Human Resources 910 Madison Ave, Suite 722 Memphis, TN 38163 Tel: (901) 448-5600 Fax: (901) 448-5170 THE UNIVERSITY OF TENNESSEE HEALTH SCIENCE the Personnel Records of UT public domain. This gives any citizen of the State of Tennessee the right to view

  4. University of Tennessee Institute of Agriculture Tennessee Watershed

    E-Print Network [OSTI]

    .state.tn.us/environment/wpc/wshed1.htm Watts Bar Watershed McMinn Monroe Pond Creek #12;University of Tennessee Institute of Agriculture Water Quality in Pond Creek 35.6 miles of Mud Creek, Greasy Branch and Pond Creek listed on 2002? #12;University of Tennessee Institute of Agriculture Pond Creek · Pasture based beef and dairy

  5. K-1435 Wastewater Treatment System for the Toxic Substances Control Act Incinerator Wastewater at the East Tennessee Technology Park, Oak Ridge, TN

    SciTech Connect (OSTI)

    Swientoniewski M.D.

    2008-02-24T23:59:59.000Z

    This paper discusses the design and performance of a wastewater treatment system installed to support the operation of a hazardous waste incinerator. The Oak Ridge Toxic Substances Control Act Incinerator (TSCAI), located at the East Tennessee Technology Park (ETTP), is designed and permitted to treat Resource ConservatioN and Recovery Act (RCRA) wastes including characteristic and listed wastes and polychlorinated biphenyl (PCB)-contaminated mixed waste. the incinerator process generates acidic gases and particulates which consist of salts, metals, and radionuclides. These off-gases from the incinerator are treated with a wet off-gas scrubber system. The recirculated water is continuously purged (below down), resulting in a wastewater to be treated. Additional water sources are also collected on the site for treatment, including storm water that infiltrates into diked areas and fire water from the incinerator's suppression system. To meet regulatory requirements for discharge, a wastewater treatment system (WWTS) was designed, constructed, and operated to treat these water sources. The WWTS was designed to provide for periodic fluctuation of contaminant concentrations due to various feed streams to the incinverator. Blow down consists of total suspended solids (TSS) and total dissolved solids (TDS), encompassing metals, radionuclide contamination and trace organics. The system design flow rate range is 35 to 75 gallons per minute (gpm). The system is designed with redundancy to minimize time off-line and to reduce impacts to the TSCAI operations. A novel treatment system uses several unit operations, including chemical feed systems, two-stage chemical reaction treatment, microfiltration, sludge storage and dewatering, neutralization, granular activated carbon, effluent neutralization, and a complete programmable logic controller (PLC) and human-machine interface (HMI) control system. To meet the space requirements and to provide portability of the WWTS to other applications, the system was installed in three, over-the-road semi trailers, and interconnected with piping and power. Trailers were oriented on a small site footprint to facilitate ease of installation. A remote sump pump skid was provided to convey water from two holding sumps adjacent to the treatment process. An accumulation tank and pump were also provided to receive miscellaneous wastewaters for treatment if they meet the waste acceptance criteria. The paper includes details of the technology used in the design, the requirements for compliance, and the initial performance demonstration and jar testing results. The WWTS successfully allowed for highly efficient, high-volume treatment with compliant discharge to off-site surface water.

  6. Persistence of hydrologic variables and reactive stream solute concentrations in an east Tennessee watershed

    E-Print Network [OSTI]

    Perfect, Ed

    , Knoxville, TN 37996, United States e Center for Environmental Biotechnology, The University of Tennessee, The University of Tennessee, Knoxville, TN 37996, United States b Civil and Environmental Engineering, Knoxville, TN 37996, United States a r t i c l e i n f o Article history: Received 4 August 2010 Received

  7. Nutrient Management Issues inNutrient Management Issues in TennesseeTennessee

    E-Print Network [OSTI]

    9 large CAFOsCAFOs permittedpermitted All swineAll swine 136 medium136 medium CAFOs issued by Dept. of EnvironmentPermits issued by Dept. of Environment and Conservation (TDEC and enforcementenforcement www.state.tn.us/environment/permits/cafo.htmwww.state.tn.us/environment/permits/cafo.htm Tennessee

  8. Tennessee-based IAC Helps Manufacturer Become More Energy Efficient

    Office of Energy Efficiency and Renewable Energy (EERE)

    Thanks to help from the Tennessee 3-Star Industrial Assessment Center, the FUJIFILM Hunt Chemicals U.S.A facility in Dayton, TN is saving an estimated $39,280 per year in energy savings. Find out more.

  9. Tennessee waltz

    E-Print Network [OSTI]

    Lewis, Allison (Allison Carol)

    2004-01-01T23:59:59.000Z

    Tennessee Waltz is a collection of short stories, set in Memphis, Tennessee, about the lives of three characters, a mother, daughter, and grandmother. These stories raise a series of questions: What is absolute? What is ...

  10. Lessons-Learned from D and D Activities at the Five Gaseous Diffusion Buildings (K-25, K- 27, K-29, K-31 and K-33) East Tennessee Technology Park, Oak Ridge, TN - 13574

    SciTech Connect (OSTI)

    Kopotic, James D. [United States Department of Energy, Oak Ridge Office, P.O. Box 2001, Oak Ridge, TN 37831 (United States)] [United States Department of Energy, Oak Ridge Office, P.O. Box 2001, Oak Ridge, TN 37831 (United States); Ferri, Mark S.; Buttram, Claude [URS - CH2M Oak Ridge LLC, East Tennessee Technology Park, P. O. Box 4699, Oak Ridge, TN 37831 (United States)] [URS - CH2M Oak Ridge LLC, East Tennessee Technology Park, P. O. Box 4699, Oak Ridge, TN 37831 (United States)

    2013-07-01T23:59:59.000Z

    The East Tennessee Technology Park (ETTP) is the site of five former gaseous diffusion plant (GDP) process buildings that were used to enrich uranium from 1945 to 1985. The process equipment in the original two buildings (K-25 and K-27) was used for the production of highly enriched uranium (HEU), while that in the three later buildings (K-29, K-31 and K-33) produced low enriched uranium (LEU). Equipment was contaminated primarily with uranium and to a lesser extent technetium (Tc). Decommissioning of the GDP process buildings has presented several unique challenges and produced many lessons-learned. Among these is the importance of good, up-front characterization in developing the best demolition approach. Also, chemical cleaning of process gas equipment and piping (PGE) prior to shutdown should be considered to minimize the amount of hold-up material that must be removed by demolition crews. Another lesson learned is to maintain shutdown buildings in a dry state to minimize structural degradation which can significantly complicate characterization, deactivation and demolition efforts. Perhaps the most important lesson learned is that decommissioning GDP process buildings is first and foremost a waste logistics challenge. Innovative solutions are required to effectively manage the sheer volume of waste generated from decontamination and demolition (D and D) of these enormous facilities. Finally, close coordination with Security is mandatory to effectively manage Special Nuclear Material (SNM) and classified equipment issues. (authors)

  11. Tennessee Air Quality Act (Tennessee)

    Broader source: Energy.gov [DOE]

    The Tennessee Air Quality Act (AQA) delegates the power to maintain air quality in the State to the Department of Environment and Conservation. Under the Department of the Environment and...

  12. Clean Tennessee Energy Grant Program (Tennessee)

    Broader source: Energy.gov [DOE]

    The purpose of the Clean Tennessee Energy Grant Program is to select and fund projects that best result in a reduction of emissions and pollutants identified below. The Clean Tennessee Energy...

  13. The UNIVERSITY OF TENNESSEE Office of Risk Management

    E-Print Network [OSTI]

    Cui, Yan

    The UNIVERSITY OF TENNESSEE Office of Risk Management 112 Conference Center Building Knoxville, TN to the Office of Risk Management. NOTE: Please share this information within your department/unit with those with University and State requirements. It is imperative that the Office of Risk Management be notified

  14. US ESC TN Site Consumption

    U.S. Energy Information Administration (EIA) Indexed Site

    an average of 79 million Btu per year, about 12% less than the U.S. average. * Average electricity consumption for Tennessee households is 33% higher than the national average...

  15. Tennessee Water Resources Information Act (Tennessee)

    Broader source: Energy.gov [DOE]

    The Tennessee Water Resources Information Act is designed to prevent the lowering of the ground water table by requiring that adequate information is obtained to document current demand for water...

  16. -Z:\\OIR Repository\\^ Reports\\^ Projects\\^ TN Dept of Labor and Workforce\\Earnings of Graduates.sas -University of Memphis Office of Institutional Research --15NOV13

    E-Print Network [OSTI]

    Dasgupta, Dipankar

    -Z:\\OIR Repository\\^ Reports\\^ Projects\\^ TN Dept of Labor and Workforce\\Earnings of Graduates.sas -University of Memphis Office of Institutional Research --15NOV13 -Graduation year includes summer, fall graduation, multiplied by 4. Source: Tennessee Dept. of Labor & Workforce data files. Excludes workers

  17. Forestry Policies (Tennessee)

    Broader source: Energy.gov [DOE]

    Tennessee's forests are managed by the Department of Agriculture, Forestry Division. In 2010 the Division issued its Statewide Forest Action Plan, which includes a section detailing the bio-energy...

  18. Gas Companies Program (Tennessee)

    Broader source: Energy.gov [DOE]

    The Gas Companies program is a set of rules that encourage the development of the natural gas industry in Tennessee. They empower gas companies to lay piped and extend conductors through the...

  19. Tennessee Small Business Investment Company Credit Act (Tennessee)

    Broader source: Energy.gov [DOE]

    The Tennessee Small Business Company Credit Act offers $120 million in gross premiums tax credits to insurance companies that invest in companies certified by the State of Tennessee as TNInvestcos....

  20. Tennessee: Tennessee's Clean Energy Resources and Economy (Brochure)

    SciTech Connect (OSTI)

    Not Available

    2013-03-01T23:59:59.000Z

    This document highlights the Office of Energy Efficiency and Renewable Energy's investments and impacts in the state of Tennessee.

  1. Job Training Assistance Programs (Tennessee)

    Broader source: Energy.gov [DOE]

    The Job Training Assistance Programs in Tennessee are a combination of three programs: The FastTrack Job Training Assistance Program (FJTAP), The Tennessee Job Skills Program (TJS), and The Job...

  2. TN Energy Efficient Schools Initiative GSHP Program

    Broader source: Energy.gov (indexed) [DOE]

    TN Energy Efficient Schools Initiative GSHP Program Principal Investigator : Terry E. Townsend, P.E. FASHRAE, LEEDAP Ground Source Heat Pumps Demonstration Projects May 19, 2010...

  3. TN Energy Efficient Schools Initiative GSHP Program | Department...

    Broader source: Energy.gov (indexed) [DOE]

    TN Energy Efficient Schools Initiative GSHP Program TN Energy Efficient Schools Initiative GSHP Program Project objectives: Develop methods to make GSHPs more affordable for...

  4. Regulations For Gas Companies (Tennessee)

    Broader source: Energy.gov [DOE]

    The Regulations for Gas Companies, implemented by the Tennessee Regulatory Authority (Authority) outline the standards for metering, distribution and electricity generation for utilities using gas....

  5. Tennessee Nuclear Profile - Power Plants

    U.S. Energy Information Administration (EIA) Indexed Site

    Tennessee nuclear power plants, summer capacity and net generation, 2010" "Plant nametotal reactors","Summer capacity (mw)","Net generation (thousand mwh)","Share of State nuclear...

  6. Purchased Gas Adjustment Rules (Tennessee)

    Broader source: Energy.gov [DOE]

    The Purchased Gas Adjustment Rules are implemented by the Tennessee Regulatory Authority (Authority). Purchased Gas Adjustment (PGA) Rules are intended to permit the company/LDC (local gas...

  7. East Tennessee State University

    E-Print Network [OSTI]

    Karsai, Istvan

    site (www.etsu.edu/irb). Contact the IRB at 439-6053 with any questions. Reporting Unanticipated- tional Officials. ETSU and ETSU/VA Office for the Protection of Human Research Subjects PO Box 70565 Johnson City, TN 37614 Version 10/23/07 Phone: (423) 439-6053 Fax: (423)439-6060 Website: www.etsu

  8. THE UNIVERSITY OF TENNESSEE THE UNIVERSITY OF TENNESSEE SPACE INSTITUTE

    E-Print Network [OSTI]

    Davis, Lloyd M.

    , or kernels; and, other oils and greases, including petroleum, fuel oil, sludge, synthetic oils, mineral oils#12;#12;THE UNIVERSITY OF TENNESSEE THE UNIVERSITY OF TENNESSEE SPACE INSTITUTE OIL POLLUTION Photographs General Best Management Practices Master Forms Technical Data Regulatory Information TAB 9 ­ Oil

  9. Oil and Gas Program (Tennessee)

    Broader source: Energy.gov [DOE]

    The Oil and Gas section of the Tennessee Code, found in Title 60, covers all regulations, licenses, permits, and laws related to the production of natural gas. The laws create the Oil and Gas...

  10. Retrofitting the Tennessee Valley Authority

    E-Print Network [OSTI]

    Zeiber, Kristen (Kristen Ann)

    2013-01-01T23:59:59.000Z

    As the flagship of the New Deal, the Tennessee Valley Authority (TVA) was a triumph of regional and environmental design that has since fallen on hard times. When writer James Agee toured the region in 1935, he described ...

  11. Regulatory Facility Guide for Tennessee

    SciTech Connect (OSTI)

    Anderson, S.S.; Bock, R.E.; Francis, M.W.; Gove, R.M.; Johnson, P.E.; Kovac, F.M.; Mynatt, J.O. [Oak Ridge National Lab., TN (United States); Rymer, A.C. [Transportation Consulting Services, Knoxville, TN (United States)

    1994-02-28T23:59:59.000Z

    This guide provides detailed compilations of international, federal, and state transportation related regulations applicable to shipments originating at or destined to Tennessee facilities. Information on preferred routes is also given.

  12. The University of Tennessee Health Science Center

    E-Print Network [OSTI]

    Cui, Yan

    The University of Tennessee Health Science Center INSTRUCTIONS FOR TOTALLY DISABLED AND/OR SENIOR CITIZEN ENROLLING IN CREDIT COURSES In accordance with provisions of Tennessee Code Annotated, Section 49 to The University of Tennessee Health Science Center. You must make application for admission to the University

  13. Invenergy TN LLC | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual Siteof Energy 2,AUDIT REPORTEnergyFarmsPower Co LtdTN LLC Jump to: navigation, search

  14. Department of Nuclear Engineering The University of Tennessee

    E-Print Network [OSTI]

    Tennessee, University of

    #12;Department of Nuclear Engineering The University of Tennessee Knoxville, Tennessee Twenty ............................................................14 Nuclear Engineering Student Awards and Honors...................................................20 of the University of Tennessee Nuclear Engineering Department (UTNE) is intended to serve as a State

  15. Department of Nuclear Engineering The University of Tennessee

    E-Print Network [OSTI]

    Tennessee, University of

    #12;Department of Nuclear Engineering The University of Tennessee Knoxville, Tennessee Twenty ........................................................................................................................ 19 NUCLEAR ENGINEERING UNDERGRADUATE STUDENT SCHOLARSHIPS ............................................................23 STUDENT ACADEMIC PERFORMANCE

  16. Tennessee Veterans Business Association 3rd Annual Business and...

    Broader source: Energy.gov (indexed) [DOE]

    Tennessee Veterans Business Association 3rd Annual Business and Education Showcase Tennessee Veterans Business Association 3rd Annual Business and Education Showcase January 28,...

  17. STATE OF TENNESSEE DEPARTMENT OF ENVIRONMENT AND CONSERVATION

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    TENNESSEE DEPARTMENT OF ENVIRONMENT AND CONSERVATION DIVISION OF RADIOLOGICAL HEALTH L&C ANNEX - THIRD FLOOR 401 CHURCH STREET NASHVILLE, TENNESSEE 37243-1532 LICENSEE: Babcock &...

  18. Knoxville, Tennessee: Solar in Action (Brochure), Solar America...

    Energy Savers [EERE]

    Knoxville, Tennessee: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Knoxville, Tennessee: Solar in Action (Brochure), Solar America...

  19. Middle Tennessee EMC- Residential Energy Efficiency Rebate Program

    Broader source: Energy.gov [DOE]

    Middle Tennessee Electric Membership Corporation (MTEMC) and the Tennessee Valley Authority (TVA) offer incentives for residential customers through the In-Home Energy Evaluation Program. This...

  20. Southwest Tennessee EMC- Residential Energy Efficiency Rebate Program

    Broader source: Energy.gov [DOE]

    Southwest Tennessee Electric Membership Corporation (STEMC), in collaboration with The Tennessee Valley Authority, offers water heater rebates for residential customers. Rebates are available for...

  1. CX: Categorical Determination-Alcoa Tennessee Automotive Sheet...

    Office of Environmental Management (EM)

    CX: Categorical Determination-Alcoa Tennessee Automotive Sheet Expansion Project CX: Categorical Determination-Alcoa Tennessee Automotive Sheet Expansion Project Categorical...

  2. East Tennessee Technology Park 3-1 3. East Tennessee Technology Park

    E-Print Network [OSTI]

    Pennycook, Steve

    East Tennessee Technology Park 3-1 3. East Tennessee Technology Park The East Tennessee Technology the mission was changed to include the enrichment of uranium for nuclear reactor fuel elements and to recycle in the demand for nuclear fuel resulted in the shutdown of the enrichment process, and production ceased

  3. Green Energy Property Tax Assessment (Tennessee) | Department...

    Broader source: Energy.gov (indexed) [DOE]

    the Treasury Tennessee offers a special ad valorem property tax assessment for certified green energy production facilities. Property that generates electricity from a certified...

  4. Atomic Energy and Nuclear Materials Program (Tennessee)

    Broader source: Energy.gov [DOE]

    The Atomic Energy and Nuclear Materials section of the Tennessee Code covers all of the regulations, licenses, permits, siting requirements, and practices relevant to a nuclear energy development. ...

  5. East Tennessee State University Web Privacy Statement

    E-Print Network [OSTI]

    Karsai, Istvan

    East Tennessee State University Web Privacy Statement A Note to Children and Parents East Tennessee through a university Web site is handled. ETSU understands the importance of protecting the privacy of personal information, especially in today's electronic environment. This privacy policy covers the Web

  6. Tennessee Energy Statistics Quarterly. Second quarter 1984

    SciTech Connect (OSTI)

    Finley, T.F. III; Hensley, B.D.; Trotter, T.

    1985-01-01T23:59:59.000Z

    The Tennessee Energy Statistics Quarterly presents the most current energy statistics available which are specific to the State of Tennessee. In every instance possible, county-level energy data are also shown. The report covers three substantive areas of the energy flow production, consumption, and pricing. The specific energy types for which data are included are coal, petroleum, natural gas and electricity. The Tennessee Energy Statistics Quarterly has been developed by the Tennessee Energy Data Base Program to serve as a supplement to the Energy Division publication - The Tennessee Energy Profiles: 1960-1980. Historical data reported in this volume cover the production and utilization of major energy supplies by fuel type and economic sectors, as well as other energy data such as prices and fuel distribution. 12 figures, 12 tables.

  7. Tennessee Natural Gas Processed in Tennessee (Million Cubic Feet)

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122 40Coal StocksProvedFeet)ThousandNumber andCrudeTemperatureThousandin Tennessee

  8. Tennessee Nuclear Profile - Power Plants

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5 Tables July 1996 Energy Information Administration Office ofthroughYear JanYear Jan Feb Mar Apr May Jun Jul AugSame MonthTennessee

  9. DNP-Nurse Anesthesia TN Tuition O/S Tuition

    E-Print Network [OSTI]

    Cui, Yan

    Nurse Anesthesia (DNP) DNP-Nurse Anesthesia TN Tuition O/S Tuition (Total) Health Service Fee Anesthesia is a 36-month program, extending over 4 academic years. This distinction is very important

  10. UNIVERSITY OF TENNESSEE COLLEGE OF MEDICINE

    E-Print Network [OSTI]

    Cui, Yan

    UNIVERSITY OF TENNESSEE COLLEGE OF MEDICINE Student Records Policy Approved by: Committee on Undergraduate Medical Education (CUME) College of Medicine Catalog 201213 POLICY STATEMENT: Student Records A student's official or permanent record pertains to academic progress

  11. UNIVERSITY OF TENNESSEE COLLEGE OF MEDICINE

    E-Print Network [OSTI]

    Cui, Yan

    UNIVERSITY OF TENNESSEE COLLEGE OF MEDICINE PROGRESS, PROMOTION, AND GRADUATION Approved by STATEMENT: Satisfactory Academic Progress Students must achieve satisfactory academic progress progress standards mirror the academic progress policies of each individual college. A student

  12. Underground Coal Gasification at Tennessee Colony 

    E-Print Network [OSTI]

    Garrard, C. W.

    1979-01-01T23:59:59.000Z

    The Tennessee Colony In Situ Coal Gasification Project conducted by Basic Resources Inc. is the most recent step in Texas Utilities Company's ongoing research into the utilization of Texas lignite. The project, an application of the Soviet...

  13. Alternative Fuels Data Center: Tennessee Information

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    facilities in Tennessee, use the TransAtlas interactive mapping tool or use BioFuels Atlas to show the use and potential production of biofuels throughout the U.S. and...

  14. Underground Coal Gasification at Tennessee Colony

    E-Print Network [OSTI]

    Garrard, C. W.

    1979-01-01T23:59:59.000Z

    The Tennessee Colony In Situ Coal Gasification Project conducted by Basic Resources Inc. is the most recent step in Texas Utilities Company's ongoing research into the utilization of Texas lignite. The project, an application of the Soviet...

  15. East Tennessee Technology Park 3-1 3. East Tennessee Technology Park

    E-Print Network [OSTI]

    Pennycook, Steve

    East Tennessee Technology Park 3-1 3. East Tennessee Technology Park The ETTP was originally built of uranium for nuclear reactor fuel elements and recycling of spent fuel. The name was changed to the Oak Ridge Gaseous Diffusion Plant. In the 1980s, a reduction in the demand for nuclear fuel resulted

  16. East Tennessee Technology Park 3-1 3. East Tennessee Technology Park

    E-Print Network [OSTI]

    Pennycook, Steve

    East Tennessee Technology Park 3-1 3. East Tennessee Technology Park ETTP was originally built the enrichment of uranium for nuclear reactor fuel elements and recycling of uranium recovered from spent fuel for nuclear fuel resulted in the shutdown of the enrichment process, and production ceased. The emphasis

  17. Tennessee

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells,1Stocks Nov-14Total DeliveredPrincipalNumber of Water8

  18. Tennessee Water Resources Research Center Annual Technical Report

    E-Print Network [OSTI]

    moved to establish an integrated and coordinated policy and administrative system for the management of Tennessee Tennessee is fortunate to have what many consider to be an abundant and good quality water supply to the management and monitoring of water resources. In recent years, however, the State, through the Tennessee

  19. ERDC TN-DOER-R18 October 2011

    E-Print Network [OSTI]

    US Army Corps of Engineers

    ERDC TN-DOER-R18 October 2011 An Introduction to Us ing B ayes ian Networks to Model Dredging Decis introduction to Bayesian networks and discusses how they might be applied to model dredging decisions a detailed example demonstrating how Bayesian networks could be used to model navigation dredging decisions

  20. ERDC TN-EMRRP-EBA-8 Hydrologic Analyses for Stream

    E-Print Network [OSTI]

    US Army Corps of Engineers

    ERDC TN-EMRRP-EBA-8 March 2011 Hydrologic Analyses for Stream Restoration Design by J. Craig quantified element in stream restoration, working across and governing multiple disciplines and system, and management decisions to be made (Federal Interagency Stream Restoration Working Group (FISRWG) 1998). Figure

  1. EMPLOYMENT SUMMARY FOR 2011 GRADUATES Memphis, TN 38103

    E-Print Network [OSTI]

    Dasgupta, Dipankar

    EMPLOYMENT SUMMARY FOR 2011 GRADUATES Memphis, TN 38103 Website : www.memphis.edu/law/ Phone : 901 graduates 129 Unemployed - Not Seeking 2 Employment Status Unknown 22 Unemployed - Seeking 9 Employed - Undeterminable * 0 0 0 0 0 Employed - Bar Passage Required 77 2 2 0 81 Pursuing Graduate Degree Full Time 1

  2. Tennessee/Wind Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries PvtStratosolar JumpTennessee/Wind Resources < Tennessee Jump to: navigation,

  3. Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries PvtStratosolar JumpTennessee/Wind Resources < Tennessee Jump to:

  4. EA-1175: Proposed Title Transfer of East Tennessee Technology Park Land and Facilities, Oak Ridge, Tennessee

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts for the proposal to transfer the title of unneeded DOE real property located at the U.S. Department of Energy East Tennessee Technology Park (ETTP) in...

  5. Careers 2011 April 7, 2011 1. 21st Mortgage Corp 620 Market ST Knoxville TN 37902 Gene Crabtree

    E-Print Network [OSTI]

    Karsai, Istvan

    Joseph Anderson, et al 15. King College 1350 King College RD Bristol TN 37620 Mona Salyer 16. Mary Kay Kelly Mullins 5. Bristol TN Police Dept 801 Anderson ST Bristol TN 37620 Grant Hale 6. Carson Newman

  6. UNIVERSITY OF TENNESSEE COLLEGE OF MEDICINE

    E-Print Network [OSTI]

    Cui, Yan

    UNIVERSITY OF TENNESSEE COLLEGE OF MEDICINE Technical Standards for Admissions, Retention by the simultaneous acquisition of skills and professional attitudes and behavior. Our faculty has the responsibility-solving and diagnosis, the critical skills demanded of physicians, require all of these intellectual abilities

  7. The University of Tennessee LAW WOMEN CONSTITUTION

    E-Print Network [OSTI]

    Tennessee, University of

    The University of Tennessee LAW WOMEN CONSTITUTION MISSION STATEMENT The Mission Statement for Law community. Law Women strives to: · Raise awareness of issues related to women's participation community that address issues of concern to women. MEMBERSHIP, OFFICERS, & COMMITTEES 1. Law Women

  8. Deputy Secretary Poneman Attends Ground Breaking at Tennessee...

    Office of Environmental Management (EM)

    vehicle, the LEAF, at its existing Smyrna, Tennessee plant. Nissan will offer electric vehicles to fleet and retail customers, and plans to ramp up production capacity...

  9. Secretary Chu, NNSA Administrator and the Tennessee Congressional...

    Energy Savers [EERE]

    Congressional Delegation Join Local Officials in Dedicating Highly Enriched Uranium Materials Facility at Y-12 Secretary Chu, NNSA Administrator and the Tennessee Congressional...

  10. Knoxville, Tennessee: Solar in Action (Brochure)

    SciTech Connect (OSTI)

    Not Available

    2011-10-01T23:59:59.000Z

    This brochure provides an overview of the challenges and successes of Knoxville, TN, a 2008 Solar America City awardee, on the path toward becoming a solar-powered community. Accomplishments, case studies, key lessons learned, and local resource information are given.

  11. Dates Days Activity Location Deadline Cost June 9 Sun. Kayaking Harpeth River, TN (KS to GT) 5/31 $33

    E-Print Network [OSTI]

    Bordenstein, Seth

    Dates Days Activity Location Deadline Cost June 9 Sun. Kayaking Harpeth River, TN (KS to GT) 5/31 $33 15 Sat. Canoeing * Families welcome * Harpeth River, TN (The Narrows) 6/7 $22 16 Sun. Hike, TN 6/14 $22 21-23 Fri. - Sun. Backpacking Great Smoky Mountain National Park, TN 6/14 $97 30 Sun

  12. Tennessee Water Resources Research Center Annual Technical Report

    E-Print Network [OSTI]

    to face severe water shortage problems. All across the state many private, domestic, and commercial useTennessee Water Resources Research Center Annual Technical Report FY 2011 Tennessee Water Resources Research Center Annual Technical Report FY 2011 1 #12;Introduction Introduction Water Resources Issues

  13. Tennessee Water Resources Research Center Annual Technical Report

    E-Print Network [OSTI]

    to face severe water shortage problems. All across the state many private, domestic, and commercial useTennessee Water Resources Research Center Annual Technical Report FY 2009 Tennessee Water Resources Research Center Annual Technical Report FY 2009 1 #12;Introduction Water Resources Issues and Problems

  14. Tennessee Water Resources Research Center Annual Technical Report

    E-Print Network [OSTI]

    to face severe water shortage problems. All across the state many private, domestic, and commercial useTennessee Water Resources Research Center Annual Technical Report FY 2012 Tennessee Water Resources Research Center Annual Technical Report FY 2012 1 #12;Introduction Introduction Water Resources Issues

  15. Tennessee Water Resources Research Center Annual Technical Report

    E-Print Network [OSTI]

    tributaries for their water sources continue to face severe water shortage problems. All across the state manyTennessee Water Resources Research Center Annual Technical Report FY 2007 Tennessee Water Resources Research Center Annual Technical Report FY 2007 1 #12;Introduction Water Resources Issues and Problems

  16. Tennessee Water Resources Research Center Annual Technical Report

    E-Print Network [OSTI]

    continue to face severe water shortage problems. All across the state many private, domesticTennessee Water Resources Research Center Annual Technical Report FY 2013 Tennessee Water Resources Research Center Annual Technical Report FY 2013 1 #12;Introduction Introduction Water Resources Issues

  17. Tennessee Water Resources Research Center Annual Technical Report

    E-Print Network [OSTI]

    to face severe water shortage problems. All across the state many private, domestic, and commercial useTennessee Water Resources Research Center Annual Technical Report FY 2010 Tennessee Water Resources Research Center Annual Technical Report FY 2010 1 #12;Introduction Introduction Water Resources Issues

  18. Tennessee Water Resources Research Center Annual Technical Report

    E-Print Network [OSTI]

    tributaries for their water sources continue to face severe water shortage problems. All across the state manyTennessee Water Resources Research Center Annual Technical Report FY 2000 Introduction Tennessee Water Resources Research Center Annual Technical Report FY 2000 Introduction Water Resources Issues

  19. Tennessee Water Resources Research Center Annual Technical Report

    E-Print Network [OSTI]

    and administrative system for the management of water resources in Tennessee. While the situation is improving to be an abundant and good quality water supply. Historically, federal government agencies, such as the Tennessee, have been the primary contributors to the management and monitoring of water resources. In recent years

  20. BWR - Spent Fuel Transport and Storage with the TN{sup TM}9/4 and TN{sup TM}24BH Casks

    SciTech Connect (OSTI)

    Wattez, L. [COGEMA LOGISTICS - AREVA Group (France); Marguerat, Y. [BKW FMB Energy Ltd (Switzerland); Hoesli, C. [ZWILAG Zwischenlager Wuerenlingen AG (Switzerland)

    2006-07-01T23:59:59.000Z

    The Swiss Nuclear Utilities have started in 2001 to store spent fuel in dry metallic dual-purpose casks at ZWILAG, the Swiss interim storage facility. BKW FMB Energy Ltd., the Muehleberg Nuclear Power Plant owner, is involved in this process and has elected to store its BWR spent fuel in a new high capacity dual-purpose cask, the TNeTeM24BH from the COGEMA Logistics/TRANSNUCLEAR TN{sup TM}24 family. The Muehleberg BWR spent fuels are transported by road in a medium size shuttle transport cask and then transferred to a heavy transport/storage cask (dry transfer) in the hot cell of ZWILAG site. For that purpose, COGEMA Logistics designed and supplied: - Two shuttle casks, TN{sup TM}9/4, mainly devoted to transport of spent fuel from Muehleberg NPP to ZWILAG. Licensed according to IAEA 1996, the TN{sup TM}9/4 is a 40 ton transport cask, for 7 BWR high bum-up spent fuel assemblies. - A series of new high capacity dual-purpose casks, TN{sup TM}24BH, holding 69 BWR spent fuels. Two transport campaigns took place in 2003 and 2004. For each campaign, ten TN{sup TM}9/4 round trips are performed, and one TN{sup TM}24BH is loaded. 5 additional TN{sup TM}24BH are being manufactured for BKW, and the next transport campaigns are scheduled from 2006. The TN{sup TM}24BH high capacity dual purpose cask and the TN{sup TM}9/4 transport cask characteristics and capabilities will then be detailed. (authors)

  1. EA-1640: Transfer of Land and Facilities within the East Tennessee Technology Park and Surrounding Area, Oak Ridge, Tennessee

    Broader source: Energy.gov [DOE]

    DOE’s Oak Ridge Operations Office issued a final EA and a finding of no significant impact for a proposal to convey DOE property located at the East Tennessee Technology Park and the surrounding area to the Community Reuse Organization of East Tennessee, City of Oak Ridge, other agencies, or private entities for mixed use economic development.Public Comment Opportunities.

  2. Adams, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlinPapersWindeySanta Clara, CaliforniaI JumpIowa:New York:Tennessee:

  3. Adamsville, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlinPapersWindeySanta Clara, CaliforniaIAdamstown,Tennessee: Energy

  4. Clean Cities: Middle Tennessee Clean Fuels coalition

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office511041clothAdvanced Materials Advanced. C o w l i t z CPlasma0 12Denver MetroHonoluluMaineMiddle Tennessee

  5. Kingston, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetecGtelInteriasIowa:Washington:Kimble County,Kingsley,Hampshire:Tennessee:

  6. Dyersburg, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model,DOE FacilityDimondale,South, NewDyer County, Tennessee: Energy Resources Jump

  7. Ooltewah, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer PlantMunhall,Missouri: EnergyExcellenceOfficeOhio: Energy Resources JumpOoltewah, Tennessee:

  8. CASL Core Partner - Tennessee Valley Authority

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItem NotEnergy,ARMForms About Batteries BatteriesCAES Home Home About UsTennessee Valley

  9. Springfield, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-f < RAPID‎SolarCity CorpSpringfield, Tennessee: Energy Resources Jump

  10. Tennessee/Incentives | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-f <Maintained ByManagement IncDrillbe nice ifTennessee/Incentives <

  11. Tennessee Valley Authority | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries PvtStratosolar Jump to:HoldingsTechintIsNumericTenino, Washington: EnergyTennessee

  12. Tennessee Valley Authority (Kentucky) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit with formSoutheasternInformation Tengchong County Zhongdian EnergyTennessee

  13. Tennessee Valley Electric Coop | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit with formSoutheasternInformation Tengchong County ZhongdianTennessee Valley

  14. A review of the T_N theory and its cousins

    E-Print Network [OSTI]

    Tachikawa, Yuji

    2015-01-01T23:59:59.000Z

    The T_N theory is a four-dimensional N=2 superconformal field theory that has played a central role in the analysis of supersymmetric dualities in the last few years. The aim of this review is to collect known properties of the T_N theory and its cousins in one place as a quick reference.

  15. GATTON COLLEGE OF PHARMACY EAST TENNESSEE STATE UNIVERSITY

    E-Print Network [OSTI]

    Karsai, Istvan

    Accreditation 11 Memberships 11 ETSU Vision Statement 11 ETSU Mission Statement 11 ETSU Values 11 ETSU Strategic........................................................................................ 63 Tennessee Board of Regents 63 ETSU Administration 64 College of Pharmacy Administration 64 FACULTY

  16. The Rural Opportunity Initiative Enhanced Job Tax Credit (Tennessee)

    Broader source: Energy.gov [DOE]

    The Rural Opportunity Initiative Enhanced Job Tax Credit program provides enhanced job tax credits to businesses locating or expanding in certain Tennessee counties considered Tier 2 or Tier 3...

  17. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current- spreading experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN

  18. Integrated solid waste management of Sevierville, Tennessee

    SciTech Connect (OSTI)

    NONE

    1995-11-01T23:59:59.000Z

    The subject document reports the results of an in-depth investigation of the fiscal year 1992 cost of the City of Sevierville, Tennessee integrated municipal solid waste management (IMSWM) system, the energy consumed to operate the system, and the environmental performance requirements for each of the system`s waste-processing and disposal facilities. Actual data from records kept by participants is reported in this document. Every effort was made to minimize the use of assumptions, and no attempt is made to interpret the data reported. Analytical approaches are documented so that interested analysts may perform manipulation or further analysis of the data. As such, the report is a reference document for MSW management professionals who are interested in the actual costs and energy consumption for a one-year period, of an operating IMSWM systems.

  19. INDEPENDENT VERIFICATION SURVEY REPORT FOR ZONE 1 OF THE EAST TENNESSEE TECHNOLOGY PARK IN OAK RIDGE, TENNESSEE

    SciTech Connect (OSTI)

    King, David A.

    2012-08-16T23:59:59.000Z

    Oak Ridge Associated Universities (ORAU) conducted in-process inspections and independent verification (IV) surveys in support of DOE's remedial efforts in Zone 1 of East Tennessee Technology Park (ETTP) in Oak Ridge, Tennessee. Inspections concluded that the remediation contractor's soil removal and survey objectives were satisfied and the dynamic verification strategy (DVS) was implemented as designed. Independent verification (IV) activities included gamma walkover surveys and soil sample collection/analysis over multiple exposure units (EUs).

  20. Recommendation 170: Remedial Investigation/Feasibility Study for East Tennessee Technology Park

    Broader source: Energy.gov [DOE]

    The ORSSAB Recommendation to DOE on a Remedial Investigation/Feasibility Study for East Tennessee Technology Park.

  1. Brownfield to Brightfield Initiative in Oak Ridge, TN - 12346

    SciTech Connect (OSTI)

    Hough, Gil; Fairless, Chad [Restoration Services, Inc. (RSI), Oak Ridge, Tennessee (United States)

    2012-07-01T23:59:59.000Z

    Experience characterizing, permitting, and restoring 'Brownfield' sites-government or industrial sites with restricted future use due to the presence or potential presence of hazardous substances, pollutants, or contaminants-is being leveraged to identify opportunities for redevelopment into solar power generating facilities which, in this context, are called 'Brightfields'. Brownfield sites offer the expansive land necessary for large photovoltaic (PV) solar farms, but require an in-depth working knowledge of complicated regulatory restrictions and environmental constraints to develop them. As a part of the effort to identify opportunities for redevelopment of Brownfield sites for solar applications, a technical guide, was composed specifically for the development of solar generation on restricted use sites. The basis of the technical guide gives specific consideration to environmental requirements and installation methods breaking that into three areas for assessing: 1) levels of contamination, 2) ground penetration requirements, and 3) the requirements for aesthetics and maintenance. Brightfield projects are underway to support the technical guide and expand re-industrialization efforts for the former DOE Gaseous Diffusion Plant in Oak Ridge, TN. There are exciting opportunities to turn Brownfields into Brightfield solar energy solutions for meeting the future renewable energy needs of our country. Brownfields that offer the large surface area required for solar PV farms coupled with the technical guide for the installation of solar farms on restricted use sites supports efforts to develop the solar capacities and expertise to tap this future market. The initial projects designed following the technical guide will provide verification of the installation requirements and beneficial reuse of restricted use sites. (authors)

  2. Y-12 and East TN Public Broadcasting System ? A Nuclear Family...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    - A Nuclear Family Video Miniseries The fourth and final episode of A Nuclear Family: Y-12 National Security Complex documentary film miniseries is complete and East TN PBS is...

  3. Influences of Drawdown on Waterbird Use of Mudflats in Two Tennessee River Reservoirs

    E-Print Network [OSTI]

    Gray, Matthew

    1 Influences of Drawdown on Waterbird Use of Mudflats in Two Tennessee River Reservoirs John W: Critical for Survival Shallowly Flooded Mudflats Tennessee River Valley These areas serve as "re & Chickamauga Justification Manipulate Reservoir Water Levels Tennessee Valley Authority (TVA) = Control Mudflat

  4. State of Tennessee Hazardous Waste Management Permit, TNHW-127

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    UNIT EPA ID NUMBER: TN3 89 009 0001 Page Number I. STANDARD CONDITIONS A. EFFECT OF PERMIT I-1 B. SEVERABILITY I-1 C. DEFINITIONS I-2 D. GENERAL DUTIES AND REQUIREMENTS I-4 E....

  5. State of Tennessee Hazardous Waste Management Permit, TNHW-122

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    9720-31 EPA ID NUMBER: TN3 89 009 0001 Page Number I. STANDARD CONDITIONS A. EFFECT OF PERMIT I-1 B. SEVERABILITY I-1 C. DEFINITIONS I-2 D. GENERAL DUTIES AND REQUIREMENTS I-4 E....

  6. Knoxville, Tennessee: Solar in Action (Brochure), Solar America...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    affordable housing residence. This 7.1-kW PV array is the largest residential system in Knoxville, TN. Photo from Southern Alliance for Clean Energy, NREL PIX 18691 PV...

  7. Transition Plan for the K-1203 Sewage Treatment Plant, East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Hoffmeister J.

    2008-10-05T23:59:59.000Z

    The K-1203 Sewage Treatment Plant (STP) was previously used to treat and process all sanitary sewage waste from the East Tennessee Technology Park (ETTP). The plant was shut down on May 29, 2008 as a result of the transition of sewage treatment for ETTP to the City of Oak Ridge. The City of Oak Ridge expanded the Rarity Ridge Sewage Treatment Plant (RRSTP) to include capacity to treat the waste from the ETTP and the Community Reuse Organization of East Tennessee (CROET) constructed a new ETTP lift station and force main to RRSTP. In preparation for the shutdown of K-1203, the US Department of Energy (DOE) in conjunction with Operation Management International (OMI) developed a shut down plan to outline actions that need to occur prior to the transition of the facility to Bechtel Jacob Company, LLC (BJC) for decontamination and demolition (D and D). This plan outlines the actions, roles, and responsibilities for BJC in order to support the transition of the K-1203 STP from OMI to the BJC Surveillance and Maintenance (S and M) and D and D programs. The D and D of the K-1203 Facilities is planned under the Comprehensive Environmental Response, Compensation, and Liability Act Remaining Facilities D and D Action Memorandum in the Balance of Site-Utilities D and D Subproject in fiscal year (FY) 2014.

  8. Tennessee Valley and Eastern Kentucky Wind Working Group

    SciTech Connect (OSTI)

    Katie Stokes

    2012-05-03T23:59:59.000Z

    In December 2009, the Southern Alliance for Clean Energy (SACE), through a partnership with the Appalachian Regional Commission, EKPC, Kentucky's Department for Energy Development and Independence, SACE, Tennessee's Department of Environment and Conservation, and TVA, and through a contract with the Department of Energy, established the Tennessee Valley and Eastern Kentucky Wind Working Group (TVEKWWG). TVEKWWG consists of a strong network of people and organizations. Working together, they provide information to various organizations and stakeholders regarding the responsible development of wind power in the state. Members include representatives from utility interests, state and federal agencies, economic development organizations, non-government organizations, local decision makers, educational institutions, and wind industry representatives. The working group is facilitated by the Southern Alliance for Clean Energy. TVEKWWG supports the Department of Energy by helping educate and inform key stakeholders about wind energy in the state of Tennessee.

  9. Dean's Faculty Advisory Committee University of Tennessee, College of Medicine

    E-Print Network [OSTI]

    Cui, Yan

    Dean's Faculty Advisory Committee University of Tennessee, College of Medicine February 3, 2003 I on the progress of the website for the DFAC. It is a work in progress and should be on-line during March 2003. V for the College of Medicine that will be held next Monday. At that time the Dean will provide his vision

  10. East Tennessee State University (ETSU) eJobs at ETSU

    E-Print Network [OSTI]

    Karsai, Istvan

    East Tennessee State University (ETSU) eJobs at ETSU Frequently Asked Questions Q.) How do I obtain an ETSU application for employment? A.) Apply for a regular budgeted position at ETSU using the eJobs at ETSU online system. Please visit the ETSU employment opportunities website for instructions at: http://www.etsu

  11. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N- GaN built-in junctions in the n-GaN layer for InGaN/GaN: N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN

  12. EA-2000: Proposed Land Transfer to Develop a General Aviation Airport at the East Tennessee Technology Park Heritage Center, Oak Ridge, Tennessee

    Broader source: Energy.gov [DOE]

    DOE is preparing an EA to assess potential environmental impacts of the proposed land transfer to the Metropolitan Knoxville Airport Authority for the development of a general aviation airport at the East Tennessee Technology Park Heritage Center, in Oak Ridge, Tennessee. Public Comment Opportunities None available at this time. Documents Available for Download No downloads found for this office.

  13. Addendum to the East Tennessee Technology Park Site-Wide Residual Contamination Remedial Investigation Work Plan Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    SAIC

    2011-04-01T23:59:59.000Z

    The East Tennessee Technology Park Site-Wide Residual Contamination Remedial Investigation Work Plan (DOE 2004) describes the planned fieldwork to support the remedial investigation (RI) for residual contamination at the East Tennessee Technology Park (ETTP) not addressed in previous Comprehensive Environmental Response, Compensation, and Liability Act of 1980 (CERCLA) decisions. This Addendum describes activities that will be conducted to gather additional information in Zone 1 of the ETTP for groundwater, surface water, and sediments. This Addendum has been developed from agreements reached in meetings held on June 23, 2010, August 25, 2010, October 13, 2010, November 13, 2010, December 1, 2010, and January 13, 2011, with representatives of the U. S. Department of Energy (DOE), U. S. Environmental Protection Agency (EPA), and Tennessee Department of Environment and Conservation (TDEC). Based on historical to recent groundwater data for ETTP and the previously completed Sitewide Remedial Investigation for the ETTP (DOE 2007a), the following six areas of concern have been identified that exhibit groundwater contamination downgradient of these areas above state of Tennessee and EPA drinking water maximum contaminant levels (MCLs): (1) K-720 Fly Ash Pile, (2) K-770 Scrap Yard, (3) Duct Island, (4) K-1085 Firehouse Burn/J.A. Jones Maintenance Area, (5) Contractor's Spoil Area (CSA), and (6) Former K-1070-A Burial Ground. The paper presents a brief summary of the history of the areas, the general conceptual models for the observed groundwater contamination, and the data gaps identified.

  14. Murfreesboro, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to: navigation, searchOfRose BendMiasoleTremor(Question) | OpenGA References:

  15. ERDC/EL TN-11-1 Flood Risk Management: Insights from

    E-Print Network [OSTI]

    US Army Corps of Engineers

    ERDC/EL TN-11-1 March 2011 Flood Risk Management: Insights from an Expert Modeling Process by M. D preparedness planning that harmonizes efforts of implementing agencies and stakeholders. Risk management are essential for effective risk management policy. Formal (versus ad hoc) analyses of risk manager and stake

  16. ON THE DrFF,US~VE CAVITATION OF ISOLATED GRAIN BOUNDARY FACETS TN

    E-Print Network [OSTI]

    ON THE DrFF,US~VE CAVITATION OF ISOLATED GRAIN BOUNDARY FACETS TN CREEPING POLYCRYSTALS J. R. RICE-Following concepts introduced by B. F. Dyson (Metal Sci.349 19761,the dilTusive cavitation of grain facets is considered in circumstances for which the cavitated fasts are well separated from one another. In this case

  17. Sales Tax Credit for Clean Energy Technology (Tennessee)

    Broader source: Energy.gov [DOE]

    [http://www.dsireusa.org/documents/Incentives/TN71F-67.6.346.htm Tenn. Code Ann. Section 67-6-346] allows a taxpayer to take a credit, to apply for a refund of taxes paid, or to apply for...

  18. Joshua P. Emery Earth and Planetary Sciences, University of Tennessee

    E-Print Network [OSTI]

    Perfect, Ed

    Sciences Building 1412 Circle Dr Knoxville, TN 37996-1410 (865) 974-8039 jemery2@utk.edu Education December is to contribute to the understanding of the formation and evolution of the Solar System and the distribution research because they are a key group for distinguishing several models of Solar System evolution

  19. Deep Residential Retrofits in East Tennessee

    SciTech Connect (OSTI)

    Boudreaux, Philip R [ORNL; Hendrick, Timothy P [ORNL; Christian, Jeffrey E [ORNL; Jackson, Roderick K [ORNL

    2012-04-01T23:59:59.000Z

    Executive Summary Oak Ridge National Laboratory (ORNL) is furthering residential energy retrofit research in the mixed-humid climate of East Tennessee by selecting 10 homes and guiding the homeowners in the energy retrofit process. The homeowners pay for the retrofits, and ORNL advises which retrofits to complete and collects post-retrofit data. This effort is in accordance with the Department of Energy s Building America program research goal of demonstrating market-ready energy retrofit packages that reduce home energy use by 30 50%. Through this research, ORNL researchers hope to understand why homeowners decide to partake in energy retrofits, the payback of home energy retrofits, and which retrofit packages most economically reduce energy use. Homeowner interviews help the researchers understand the homeowners experience. Information gathered during the interviews will aid in extending market penetration of home energy retrofits by helping researchers and the retrofit industry understand what drives homeowners in making positive decisions regarding these retrofits. This report summarizes the selection process, the pre-retrofit condition, the recommended retrofits, the actual cost of the retrofits (when available), and an estimated energy savings of the retrofit package using EnergyGauge . Of the 10 households selected to participate in the study, only five completed the recommended retrofits, three completed at least one but no more than three of the recommended retrofits, and two households did not complete any of the recommended retrofits. In the case of the two homes that did none of the recommended work, the pre-retrofit condition of the homes and the recommended retrofits are reported. The five homes that completed the recommended retrofits are monitored for energy consumption of the whole house, appliances, space conditioning equipment, water heater, and most of the other circuits with miscellaneous electric loads (MELs) and lighting. Thermal comfort is also monitored, with temperature and humidity measured in all conditioned zones, attics, crawlspaces, and unconditioned basements. In some homes, heat flux transducers are installed on the basement walls to help determine the insulating qualities of the technologies and practices. EnergyGauge is used to estimate the pre-retrofit and post-retrofit home energy rating system (HERS) index and reduction in energy consumption and energy bill. In a follow-up report, data from the installed sensors will be presented and analyzed as well as a comparison of the post-retrofit energy consumption of the home to the EnergyGauge model of the post-retrofit home. Table ES1 shows the retrofits that were completed at the eight households where some or all of the recommended retrofits were completed. Home aliases are used to keep the homeowners anonymous. Some key findings of this study thus far are listed as follows. Some homeowners (50%) are not willing to spend the money to reach 30 50% energy savings. Quality of retrofit work is significantly variable among contractors which impact the potential energy savings of the retrofit. Challenges exist in defining house volume and floor area. Of the five homes that completed all the recommended retrofits, energy bill savings was not the main driver for energy retrofits. In no case were the retrofits cost neutral given a 15 year loan at 7% interest for the retrofit costs.

  20. EIS-0152: Iroquois/Tennessee Phase I Pipeline Project

    Broader source: Energy.gov [DOE]

    The Federal Energy Regulatory Commission prepared this statement to asses the environmental impacts of constructing and operating an interstate natural gas pipeline and associated infrastructure to transport gas from Canada and domestic sources to the New England Market, as proposed by the Iroquois Gas Transmission System and the Tennessee Gas Pipeline Company. The U.S. Department of Energy Office of Fossil Energy was a cooperating agency during statement development and adopted the statement on 9/1/1990.

  1. The East Tennessee Technology Park Progress Report for the Tennessee Hazardous Waste Reduction Act for Calendar Year 1999

    SciTech Connect (OSTI)

    Bechtel Jacobs Company LLC

    2000-03-01T23:59:59.000Z

    This report is prepared for the East Tennessee Technology Park (formerly the Oak Ridge K-25 Site) (ETTP) in compliance with the ''Tennessee Hazardous Waste Reduction Act of 1990'' (THWRA) (TDEC 1990), Tennessee Code Annotated 68-212-306. Annually, THWRA requires a review of the site waste reduction plan, completion of summary waste reduction information as part of the site's annual hazardous waste reporting, and completion of an annual progress report analyzing and quantifying progress toward THWRA-required waste stream-specific reduction goals. This THWRA-required progress report provides information about ETTP's hazardous waste streams regulated under THWRA and waste reduction progress made in calendar year (CY) 1999. This progress report also documents the annual review of the site plan, ''Oak Ridge Operations Environmental Management and Enrichment Facilities (EMEF) Pollution Prevention Program Plan'', BJC/OR-306/R1 (Bechtel Jacobs Company 199a). In 1996, ETTP established new goal year ratios that extended the goal year to CY 1999 and targeted 50 percent waste stream-specific reduction goals. In CY 1999, these CY 1999 goals were extended to CY 2000 for all waste streams that generated waste in 1999. Of the 70 ETTP RCRA waste streams tracked in this report from base years as early as CY 1991, 51 waste streams met or exceeded their reduction goal based on the CY 1999 data.

  2. The East Tennessee Technology Park Progress Report for the Tennessee Hazardous Waste Reduction Act for Calendar Year 2000

    SciTech Connect (OSTI)

    Bechtel Jacobs Company LLC

    2001-03-01T23:59:59.000Z

    This report is prepared for the East Tennessee Technology Park (formerly the Oak Ridge K-25 Site) (ETTP) in compliance with the ''Tennessee Hazardous Waste Reduction Act of 1990'' (THWRA) (TDEC 1990), Tennessee Code Annotated 68-212-306. Annually, THWRA requires a review of the site waste reduction plan, completion of summary waste reduction information as part of the site's annual hazardous waste reporting, and completion of an annual progress report analyzing and quantifying progress toward THWRA-required waste stream-specific reduction goals. This THWRA-required progress report provides information about ETTP's hazardous waste streams regulated under THWRA and waste reduction progress made in calendar year (CY) 2000. This progress report also documents the annual review of the site plan, ''Oak Ridge Operations Environmental Management and Enrichment Facilities (EMEF) Pollution Prevention Program Plan'', BJC/OR-306/R1 (Bechtel Jacobs Company 2000). In 1996, ETTP established new goal year ratios that extended the goal year to CY 1999 and targeted 50 percent waste stream-specific reduction goals. In CY 2000, these goals were extended to CY 2001 for all waste streams that generated waste in 2000. Of the 70 ETTP RCRA waste streams tracked in this report from base years as early as CY 1991, 50 waste streams met or exceeded their reduction goal based on the CY 2000 data.

  3. 2012-2013 Yates Dissertation Fellowships Graduate School -University of Tennessee, Knoxville

    E-Print Network [OSTI]

    Dai, Pengcheng

    2012-2013 Yates Dissertation Fellowships Graduate School - University of Tennessee, Knoxville 2012-2013Yates Dissertation Fellowships The Yates Dissertation Fellowships provide recognition and financial the dissertation process. Eligibility Criteria: A candidate must be a University of Tennessee, Knoxville graduate

  4. Design analysis report for the TN-WHC cask and transportation system

    SciTech Connect (OSTI)

    Brisbin, S.A., Fluor Daniel Hanford

    1997-02-13T23:59:59.000Z

    This document presents the evaluation of the Spent Nuclear Fuel Cask and Transportation System. The system design was developed by Transnuclear, Inc. and its team members NAC International, Nelson Manufacturing, Precision Components Corporation, and Numatec, Inc. The cask is designated the TN-WHC cask. This report describes the design features and presents preliminary analyses performed to size critical dimensions of the system while meeting the requirements of the performance specification.

  5. Lewis County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant Jump to:Landowners and Wind EnergyIndiana:New York:NewLeupp,LevyTennessee: Energy

  6. Bradley County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:EzfeedflagBiomass ConversionsSouthbyBoston Heights,BoyneTennessee: Energy Resources Jump to:

  7. Carter County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:EzfeedflagBiomassSustainableCSL GasPermitsGreenCarrizo EnergyCarrolltonMontana:Tennessee:

  8. Scott County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt Ltd JumpInformation Evaluation,SchmidNorthMississippi: EnergyTennessee:

  9. Signal Mountain, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt LtdShawangunk, New York:SiG Solar GmbH Jump to:SierraMountain, Tennessee:

  10. Tennessee - Compare - U.S. Energy Information Administration (EIA)

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells,1Stocks Nov-14Total DeliveredPrincipalNumber of Water8Tennessee

  11. Jefferson County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetecGtelInterias SolarJane Capital4.1672949°, -97.87216° ShowTennessee:

  12. Hickman County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetecGtel Jump to: navigation, search Name: Hi-GtelTennessee: Energy Resources

  13. Houston County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetecGtel Jump to:Pennsylvania:County, Wyoming: EnergyCare Co LtdTennessee:

  14. Perry County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal PwerPerkins County, Nebraska: Energy Resources Jump to: navigation,Tennessee: Energy Resources

  15. Polk County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal PwerPerkins County, Nebraska: EnergyPiratini Energia S6665°,JumpFlorida:Tennessee: Energy

  16. City of Etowah, Tennessee (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual Siteof EnergyInnovationin Urban Transport |CityCity of Dayton,City ofCityEtowah, Tennessee

  17. Hardin County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetec AG| OpenInformation Handbook forHansung A ETexas:04961°,Tennessee:

  18. Tennessee Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the.pdfBreakingMayDepartment ofEnergyTeamDevelopmentDevelopingNEPA ReviewTennessee

  19. Stewart County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt LtdShawangunk,SoutheastSt.Steep GradientWashington: Energy ResourcesTennessee:

  20. Sullivan County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries PvtStratosolar Jump to: navigation, searchNew Jersey)Indiana: EnergyYork:Tennessee:

  1. Dyer County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model,DOE FacilityDimondale,South, NewDyer County, Tennessee: Energy Resources Jump to:

  2. Marion County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant Jump to:LandownersLuther,JemezMissouri: Energy Resources Jump to:Tennessee: Energy

  3. McMinn County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant JumpMarysville, Ohio: Energy8429°, -88.864698° Show MapMcMinn County, Tennessee:

  4. Tennessee/Wind Resources/Full Version | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-f <Maintained ByManagement IncDrillbe nice ifTennessee/Incentives

  5. Tennessee Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurTheBrookhavenMassachusetts RegionsPaulShades of PerfectionTennessee Regions

  6. Tennessee Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurTheBrookhavenMassachusetts RegionsPaulShades of PerfectionTennessee

  7. Anderson County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-fTriWildcat Place:Alvan2809328°, -95.3102505° Show MapCarolina:Tennessee:

  8. DOE - Office of Legacy Management -- Tennessee Valley Authority - AL 01

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTableSelling Corp -K LeDowntown Site -Tennessee Valley

  9. Montgomery County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant JumpMarysville,Missoula,Monterey County, California:Tennessee: Energy Resources Jump

  10. Moore County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant JumpMarysville,Missoula,Monterey County,Monticello, Indiana:StrategyMoodyTennessee:

  11. Benton County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:EzfeedflagBiomass Conversions IncBayBelmontInformation IndianaInformationTennessee:

  12. Robertson County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt Ltd Jump to: navigation,MazeOhio: EnergyTennessee: Energy Resources Jump to:

  13. City of Memphis, Tennessee (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, click here.TelluricPowerCityJonesville,Livingston,CityCity of Memphis, Tennessee

  14. Claiborne County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, clickInformation Smyrna Beach,Stuart,Woolstock, IowaTennessee: Energy

  15. Clay County, Tennessee: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, clickInformation SmyrnaNew York:Information8186°,Nebraska:Tennessee:

  16. Tennessee gas field brings Eastern Overthrust new life

    SciTech Connect (OSTI)

    Petzet, G.A.

    1996-09-02T23:59:59.000Z

    The Eastern US Overthrust Belt has gained an E and P company in its southern reaches while seeing de-emphasis from a long time player in more northerly areas. A gas field discovered in the early 1980s in northeastern Tennessee is nearly ready to be placed on production. It would be the first commercial gas production in the southern portion of the belt, which extends more than 1,000 miles from Alabama to New England. Tengasco has five wells capable of producing gas from Cambro-Ordovician Knox in Swan Creek field, southwest of Sneedville in Hancock County, Tenn., about 10 miles south of Lee County, Va. It hopes to drill five more wells by year-end. It began laying a 30--35 MMcfd, 23 mile, 6 in. gas pipeline to Rogersville, Tenn., early last month. Torch Inc., Belle Chasse, La., has the contract. Tengasco plans to start production later this year. Initially a gas utility in neighboring Hawkins County will take 8--9 MMcfd and transport any excess gas to Tenneco Energy affiliate East Tennessee Natural Gas Co. The primary production to date in Swan Creek field has been in a 300 ft section some 400--450 ft from the top of Knox. No water has been found.

  17. Indoor nitrogen dioxide in five Chattangooga, Tennessee public housing developments

    SciTech Connect (OSTI)

    Parkhurst, W.J.; Harper, J.P. (Tennessee Valley Authority (US)); Spengler, J.D.; Fraumeni, L.P.; Majahad, A.M. (Harvard School of Public Health, Boston, MA (US)); Cropp, J.W. (Chattanooga-Hamilton County Air Pollution Control Bureau, Chattanooga, TN (US))

    1988-01-01T23:59:59.000Z

    This report summarizes an indoor nitrogen dioxide (NO{sub 2}) sampling study conducted during January through March of 1987 in five Chattanooga public housing developments. The origins of this study date to the summer of 1983 when the Piney Woods Community Organization (a citizens action group) expressed concern about toxic industrial air pollution and the effects it might have on their community. In response to these concerns, the Chattanooga-Hamilton County Air Pollution Control Bureau (Bureau) requested assistance from the Tennessee Department of Health and Environment (TDHE) in conducting a community health survey and assistance from the Tennessee Valley Authority (TVA) in conducting a community air quality measurement program. The TDHE community health study did not find any significant differences between the mortality statistics for the Piney Woods community and a demographically similar control group. However, a health survey revealed that Piney Woods residents did not have a statistically significant higher self-reported prevalence of cough, wheezing, phlegm, breathlessness, colds, and respiratory illness.

  18. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer

  19. DOE - Office of Legacy Management -- Vitro Corp of America - TN 04

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTableSelling Corp -K LeDowntownUnitedCenter -VanadiumNJ 02TN

  20. Summary - Mitigation and Remediation of Mercury Contamination at the Y-12 Plant, Oak Ridge, TN

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 1112011 Strategic2Uranium Transferon the Passing of AdmiraltheOil and LessOak Ridge, TN EM

  1. A climatology, synoptic assessment, and thermodynamic evaluation for cloud-to-ground lightning in Georgia: a study for the 1996 Summer Olympics

    E-Print Network [OSTI]

    Livingston, Eric Scott

    1995-01-01T23:59:59.000Z

    flash density within 50 km of Savannah, Georgia for the month of August from 1986 to 1993. . . . . . . . . 35 Average ground flash density within 50 km of the Ocoee River in Tennessee for the month of July from 1986 to 1993.... LATITUDE LONGITUDE Ol ic Rin Columbus, GA Con ers, GA Athens, GA Ocoee River, TN Stone Mtn. , GA Wolf Creek, GA Savannah, GA Gainesville, GA 33. 74 32. 52 33. 67 33. 95 35. 07 33. 80 33. 67 32. 13 34. 32 84. 40 84. 95 83. 97 83. 32...

  2. Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP/GaAs heterostructures

    E-Print Network [OSTI]

    Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP September 2007 Utilizing lattice-matched GaAs/InGaP/GaAs heterostructures, clean micromechanical resonators are fabricated and characterized. The nearly perfect selectivity of GaAs/InGaP is demonstrated by realizing

  3. Regional Report Issue Paper

    E-Print Network [OSTI]

    propelled the energy- and natural resource-production states to the top of the nation's employment Oklahoma TX Texas AR Arkansas LA Louisiana AL balA am a KY Kentucky TN Tennessee WV VA Virginia GA Georgia, Louisiana, Oklahoma, Texas MIDWEST East North Central Illinois, Indiana, Michigan, Ohio, Wisconsin West

  4. Ga nanoparticle-enhanced photoluminescence of GaAs

    SciTech Connect (OSTI)

    Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States); Katzenstein, A. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Eckerd College, St. Petersburg, Florida 33711-4744 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-09-02T23:59:59.000Z

    We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

  5. THE UNIVERSITY OF TENNESSEE HEALTH SCIENCE CENTER (UTHSC) 2014 NURSING PRE-MATRICULATION PROGRAM APPLICATION

    E-Print Network [OSTI]

    Cui, Yan

    1 THE UNIVERSITY OF TENNESSEE HEALTH SCIENCE CENTER (UTHSC) 2014 NURSING PRE-MATRICULATION PROGRAM: _________________________________________________________________________________ CITIZENSHIP: Are you a U.S. Citizen, non-citizen national, or foreign national who possesses a visa permitting

  6. Race, Place, and Family: Narratives of the Civil Rights Movement in Brownsville, Tennessee, and the Nation

    E-Print Network [OSTI]

    Bond, Jo Zanice

    2011-12-31T23:59:59.000Z

    This dissertation examines the Civil Rights Movement through the experiences of primarily two African American families with roots in Brownsville, Tennessee. This study, based on archival research and oral histories, ...

  7. UTNEUPDATEUTNEUPDATEA Publication from the Department of Nuclear Engineering at the University of Tennessee Continues Nuclear

    E-Print Network [OSTI]

    Tennessee, University of

    UTNEUPDATEUTNEUPDATEA Publication from the Department of Nuclear Engineering at the University of Tennessee FALL 2014 UCOR Continues Nuclear Engineering Support Sam Donnald and Nathan Capps Outstanding NE Engineering Achieves Major Advances in Enrollment, Research, and Recognition UT Nuclear Engineering Achieves

  8. Hope and despair: visual arts in the drama of Tennessee Williams 

    E-Print Network [OSTI]

    Wallace, Stephanie

    2013-02-22T23:59:59.000Z

    The following investigation will focus on three of Tennessee Williams' later plays: The Red Devil Battery Sign, Vieux Carre, and The Two-Character Play. By drawing parallels between these three samples of his later work and various movements...

  9. An economic analysis of a monitored retrievable storage site for Tennessee. Final report and appendices

    SciTech Connect (OSTI)

    Fox, W.F.; Mayo, J.W.; Hansen, L.T.; Quindry, K.E.

    1985-12-17T23:59:59.000Z

    The United States Department of Energy is charged with the task of identifying potential sites for a Monitored Retrievable Storage (MRS) Facility and reporting the results of its analysis to Congress by January 1986. DOE chose three finalist sites from 11 sites DOE analysts evaluated earlier. All three are in Tennessee, including two in Oak Ridge and one in Trousdale/Smith Counties. This paper is a summary of research undertaken on the economic effects of establishing the MRS facility in Tennessee. All three locations were considered in the analysis, but on some occasions attention is focused on the site preferred by DOE. The research was undertaken by the Center for Business and Economic Research (CBER), College of Business Administration, the University of Tennessee, Knoxville, under contract with the Tennessee Department of Economic and Community Development.

  10. An economic analysis of a monitored retrievable storage site for Tennessee

    SciTech Connect (OSTI)

    Fox, W.F.; Mayo, J.W.; Hansen, L.T.; Quindry, K.E.

    1985-12-17T23:59:59.000Z

    The United States Department of Energy is charged with the task of identifying potential sites for a Monitored Retrievable Storage (MRS) Facility and reporting the results of its analysis to Congress by January 1986. DOE chose three finalist sites from 11 sites DOE analysts evaluated earlier. All three are in Tennessee, including two in Oak Ridge and one in Trousdale/Smith Counties. This paper is a summary of research undertaken on the economic effects of establishing the MRS facility in Tennessee. All three locations were considered in the analysis, but on some occasions attention is focused on the site preferred by DOE. The research was undertaken by the Center for Business and Economic Research (CBER), College of Business Administration, the University of Tennessee, Knoxville, under contract with the Tennessee Department of Economic and Community Development.

  11. Hope and despair: visual arts in the drama of Tennessee Williams

    E-Print Network [OSTI]

    Wallace, Stephanie

    2013-02-22T23:59:59.000Z

    between reality and dream is also prevalent in the Symbolist movement's drama and visual arts. In her article, "Tennessee Williams: Optimistic Symbolist, " June Bennet Larsen discusses Williams' work in relation to this genre. In both cases...

  12. Tennessee: Da Vinci Fuel-in-Oil Reduces Emissions, Wins R&D 100...

    Energy Savers [EERE]

    Da Vinci Fuel-in-Oil Reduces Emissions, Wins R&D 100 Award Tennessee: Da Vinci Fuel-in-Oil Reduces Emissions, Wins R&D 100 Award August 19, 2013 - 5:07pm Addthis Developed jointly...

  13. Factors influencing participation in craft organizations: a study of East Tennessee craftspeople and their organizations

    E-Print Network [OSTI]

    Monk, Phillip Myrl

    1977-01-01T23:59:59.000Z

    FACTORS INFLUENCING PARTICIPATION IN CRAFT ORGANIZATIONS: A STUDY OF EAST TENNESSEE CRAFTSPEOPLE AND THEIR ORGANIZATIONS A Thesis by PHILLIP MYRL MONK Submitted to the Graduate College of Texas A&M University in partial fulfillment.... of the requirement for the degree of MASTER OF SCIENCE December 1977 Major Subject: Sociology FACTORS INFLUENCING PARTICIPATION IN CRAFT ORGANIZATIONS: A STUDY OF EAST TENNESSEE CRAFTSPEOPLE AND THEIR OGRANIZATIONS A Thesis by PHILLIP MYRL MONK Approved...

  14. Fiscal year 1993 well plugging and abandonment program, Y-12 Plant, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Not Available

    1993-09-01T23:59:59.000Z

    This report is a synopsis of the progress of the well plugging and abandonment program at the Y-12 Plant, Oak Ridge, Tennessee, from December 1992 through August 20, 1993. A total of 70 wells and borings were plugged and abandoned during the period of time covered in this report. All wells and borings were plugged and abandoned in accordance with the Monitoring Well Plugging and Abandonment Plan for the US Department of Energy, Y-12 Plant, Oak Ridge, Tennessee (HSW, Inc. 1991).

  15. Fiscal Year 1993 Well Plugging and Abandonment Program Summary Report Y-12 Plant, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    NONE

    1994-09-01T23:59:59.000Z

    This report is a synopsis of the progress of the well plugging and abandonment program at the Y-12 Plant, Oak Ridge, Tennessee, from October 1993 through August 1994. A total of 57 wells and borings were plugged and abandoned during the period of time covered in this report. All wells and borings were plugged and abandoned in accordance with the Monitoring Well Plugging and Abandonment Plan for the U.S. Department of Energy, Y-12 Plant, Oak Ridge, Tennessee.

  16. The measurement of contact areas and temperature during frictional sliding of Tennessee sandstone 

    E-Print Network [OSTI]

    Teufel, Lawrence William

    1976-01-01T23:59:59.000Z

    THE MEASUREMENT OF CONTACT AREAS AND TEMPERATURE DURING FRICTIONAL SLIDING OF TENNESSEE SANDSTONE A Thesis by LAWRENCE WILLIAM TEUFEL Submit';ed to the Graduate College of Texas ASM University in partial fulfillment of the requirements... for the degree of MASTERS OF SCIENCE August 1976 Major Subiect: Geology THE MEASUREMENT OF CONTACT AREAS AND TEMPERATURES DURING FRICTIONAL SLIDING OF TENNESSEE SANDSTONE A Thesis by LAWRENCE WILLIAM TEUFEL Approved as to sty1e and content by: Cha rma...

  17. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01T23:59:59.000Z

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  18. GaAs/InGaP/AlGaAs quantum-well infrared photodetectors

    SciTech Connect (OSTI)

    Keshagupta, P.; Radpour, F. [Univ. of Cincinnati, OH (United States)

    1994-12-31T23:59:59.000Z

    In this paper, a new quantum-well infrared photodetector (QWIP) based on bound-to-miniband transitions in a GaAs/InGaP quantum well with GaAs/AlGaAs short superlattice barriers is presented and compared with the conventional GaAs/InGaP QWIPs. Results of the theoretical calculations of the detector parameters and the preliminary fabrication results of an embedded-well to miniband (EWTMB) GaAs/InGaP/AlGaAs quantum well/superlattice detector are presented. The advantages of the proposed design include improvement of the material quality, ability to adjust the peak wavelength in 8--12 {micro}m range, and in the lower dark current.

  19. Environmental Management Waste Management Facility Waste Lot Profile 155.5 for K-1015-A Laundry Pit, East Tennessee Technology Park Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Bechtel Jacobs, Raymer J.E.

    2008-06-12T23:59:59.000Z

    In 1989, the Oak Ridge Reservation (ORR), which includes the East Tennessee Technology Park (ETTP), was placed on the Comprehensive Environmental Response, Compensation, and Liability Act of 1980 (CERCLA) National Priorities List. The Federal Facility Agreement (FFA) (DOE 1992), effective January 1, 1992, now governs environmental restoration activities conducted under CERCLA at the ORR. Following signing of the FFA, U.S. Department of Energy (DOE), U.S. Environmental Protection Agency (EPA), and the state of Tennessee signed the Oak Ridge Accelerated Cleanup Plan Agreement on June 18, 2003. The purpose of this agreement is to define a streamlined decision-making process to facilitate the accelerated implementation of cleanup, to resolve ORR milestone issues, and to establish future actions necessary to complete the accelerated cleanup plan by the end of fiscal year 2008. While the FFA continues to serve as the overall regulatory framework for remediation, the Accelerated Cleanup Plan Agreement supplements existing requirements to streamline the decision-making process. The disposal of the K-1015 Laundry Pit waste will be executed in accordance with the 'Record of Decision for Soil, Buried Waste, and Subsurface Structure Actions in Zone, 2, East Tennessee Technology Park, Oak Ridge, Tennessee' (DOB/ORAH-2161&D2) and the 'Waste Handling Plan for the Consolidated Soil and Waste Sites with Zone 2, East Tennessee Technology Park, Oak Ridge, Tennessee' (DOE/OR/01-2328&D1). This waste lot consists of a total of approximately 50 cubic yards of waste that will be disposed at the Environmental Management Waste Management Facility (EMWMF) as non-containerized waste. This material will be sent to the EMWMF in dump trucks. This profile is for the K-1015-A Laundry Pit and includes debris (e.g., concrete, metal rebar, pipe), incidental soil, plastic and wood, and secondary waste (such as plastic sheeting, hay bales and other erosion control materials, wooden pallets, contaminated equipment, decontamination materials, etc.).

  20. Proceedings of 2008 NSF Engineering Research and Innovation Conference, Knoxville, Tennessee Grant # CMMI-0423485 Multiscale Design of Functionally Graded Materials

    E-Print Network [OSTI]

    Vel, Senthil

    Proceedings of 2008 NSF Engineering Research and Innovation Conference, Knoxville, Tennessee Grant: Engineering Design #12;Proceedings of 2008 NSF Engineering Research and Innovation Conference, Knoxville

  1. Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well

    SciTech Connect (OSTI)

    Asami, T.; Nosho, H.; Tackeuchi, A. [Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555 (Japan); Li, L. H.; Harmand, J. C. [Laboratory for Photonics and Nanostructures-CNRS, Site Alcatel de Marcoussis, Route de Nozay, 91460 Marcoussis (France); Lu, S. L. [Suzhou Institute of Nano-tech and Nano-bionics, CAS, Dushu, Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou 215125 (China)

    2011-12-23T23:59:59.000Z

    We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn{sub 0.36}N{sub 0.006}AsSb{sub 0.015} well, 5-nm-thick GaN{sub 0.01}AsSb{sub 0.11} intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.

  2. Baseline Environmental Analysis Report for the K-1251 Barge Facility at the East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Van Winkle J.E.

    2007-08-24T23:59:59.000Z

    This report documents the baseline environmental conditions of the U. S. Department of Energy's (DOE's) K-1251 Barge Facility, which is located at the East Tennessee Technology Park (ETTP). DOE is proposing to lease the facility to the Community Reuse Organization of East Tennessee (CROET). This report provides supporting information for the use, by a potential lessee, of government-owned facilities at ETTP. This report is based upon the requirements of Sect. 120(h) of the Comprehensive Environmental Response, Compensation, and Liability Act of 1980 (CERCLA). The lease footprint is slightly over 1 acre. The majority of the lease footprint is defined by a perimeter fence that surrounds a gravel-covered area with a small concrete pad within it. Also included is a gravel drive with locked gates at each end that extends on the east side to South First Avenue, providing access to the facility. The facility is located along the Clinch River and an inlet of the river that forms its southern boundary. To the east, west, and north, the lease footprint is surrounded by DOE property. Preparation of this report included the review of government records, title documents, historic aerial photos, visual and physical inspections of the property and adjacent properties, and interviews with current and former employees involved in the operations on the real property to identify any areas on the property where hazardous substances and petroleum products or their derivatives and acutely hazardous wastes were known to have been released or disposed. Radiological surveys were conducted and chemical samples were collected to assess the facility's condition.

  3. Compositionally-graded InGaAsInGaP alloys and GaAsSb alloys for metamorphic InP on GaAs

    E-Print Network [OSTI]

    Compositionally-graded InGaAs­InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs Li Yang a of tandem graded layers of InGaAs and InGaP with compositional grading of the In concentration. This tandem

  4. The Graduate School The School of Graduate Studies has enjoyed more than 50 years of leadership in Tennessee and in

    E-Print Network [OSTI]

    Karsai, Istvan

    offerings at ETSU rank only behind the University of Tennessee, Knoxville and the University of Memphis. ETSU, along with Middle Tennessee State University, is the third-largest public graduate school and health sciences. This application booklet is designed to give you a brief overview of ETSU's wide range

  5. 11-0187 E11-7015-00-014-11 1M 4/10 http://middletennessee.tennessee.edu

    E-Print Network [OSTI]

    Dai, Pengcheng

    Conditioner, Giles County Joey and Gail Chessor, Grinder's Switch Winery, Hickman County Dan and Debbie Eiser, Blueberries on the Buffalo, Lawrence County Representatives from three agricultural enterprises and Tractor-Mounted Sprayers White Pine, Tennessee Riverbend Nurseries Thompsons Station, Tennessee Tri

  6. Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors

    E-Print Network [OSTI]

    Pala, Nezih

    Torr and consisted of a 1.4 lm undoped GaN buffer layer on i-SiC substrate, * Corresponding authorLow frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors N. Pala a November 2002 Abstract Low-frequency noise in AlGaN/InGaN/GaN double heterostructure field effect

  7. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    E-Print Network [OSTI]

    Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan

    2010-08-24T23:59:59.000Z

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  8. Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption In this paper, we present four GaN based polar quantum structures grown on c-plane embedded in p-i-n diode GaN/AlGaN quantum structures for operation in the deep-UV spectral region and the other three

  9. Environmental Compliance and Protection Program Description Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Bechtel Jacobs

    2009-02-26T23:59:59.000Z

    The objective of the Environmental Compliance and Protection (EC and P) Program Description (PD) is to establish minimum environmental compliance requirements and natural resources protection goals for the Bechtel Jacobs Company LLC (BJC) Oak Ridge Environmental Management Cleanup Contract (EMCC) Contract Number DE-AC05-98OR22700-M198. This PD establishes the work practices necessary to ensure protection of the environment during the performance of EMCC work activities on the US Department of Energy's (DOE's) Oak Ridge Reservation (ORR) in Oak Ridge, Tennessee, by BJC employees and subcontractor personnel. Both BJC and subcontractor personnel are required to implement this PD. A majority of the decontamination and demolition (D and D) activities and media (e.g., soil and groundwater) remediation response actions at DOE sites on the ORR are conducted under the authority of the Comprehensive Environmental Response, Compensation, and Liability Act of 1980 (CERCLA). CERCLA activities are governed by individual CERCLA decision documents (e.g., Record of Decision [ROD] or Action Memorandum) and according to requirements stated in the Federal Facility Agreement for the Oak Ridge Reservation (DOE 1992). Applicable or relevant and appropriate requirements (ARARs) for the selected remedy are the requirements for environmental remediation responses (e.g., removal actions and remedial actions) conducted under CERCLA.

  10. Development of the IMPACS materials management system at Tennessee Gas Transmission

    SciTech Connect (OSTI)

    Danko, W.A.; Owen, R.J.

    1985-08-01T23:59:59.000Z

    Tennessee Gas Transmission is one of the largest natural-gas-transmission companies in the world. Its revenues in 1983 exceeded $4 billion, and it employs approximately 3600 people. TGT was incorporated as the Tennessee Gas and Transmission Company in 1943. It has several subsidiaries including Midwestern Gas Transmission, East Tennessee Natural Gas, Channel Industries, and Tenngasco. TGT is also the original corporation from which the Tenneco, Inc., group of companies emerged. In this issue this article deals with the materials management function at TGT. More specifically, it elaborates on TGT's new fully integrated materials management system, IMPACS. The article details the need for a new system, the implementation of the system, the benefits derived from the system, and the operation of the system. 4 figures.

  11. Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1

    E-Print Network [OSTI]

    Nabben, Reinhard

    Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1 , T. Stempel1/37, 01-142 Warsaw, Poland ABSTRACT Time-integrated and time-resolved photoluminescence measurements on InGaN quantum wells grown by MOCVD on two different substrates (sapphire and GaN) show that the lumines- cence

  12. Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers

    SciTech Connect (OSTI)

    Yang, Yujue; Wang, Junxi; Li, Jinmin; Zeng, Yiping, E-mail: ypzeng@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-06-21T23:59:59.000Z

    The effects of InGaN-based light-emitting diodes (LEDs) with Al composition increasing and decreasing GaN-AlGaN barriers along the growth direction are studied numerically. Simulation results suggest that the LEDs with GaN-AlGaN composition-decreased barriers show more significant enhancement of light-output power and internal quantum efficiency than LEDs with composition-increasing GaN-AlGaN barriers when compared with the conventional LED with GaN barriers, due to the improvement in hole injection efficiency and electron blocking capability. Moreover, the optical performance is further improved by replacing GaN-AlGaN barriers with AlGaN-GaN barriers of the same Al composition-decreasing range, which are mainly attributed to the modified band diagrams. In addition, the major causes of the different efficiency droop behaviors for all the designed structures are explained by the electron leakage current and the different increase rates of hole concentration with injection current.

  13. Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers

    E-Print Network [OSTI]

    Keogh, David Martin

    2006-01-01T23:59:59.000Z

    T. Henderson, “High- Speed InGaP/GaAs HBT’s Using a SimpleA typical AlGaAs/GaAs HBT or InGaP/GaAs HBT has the opposite

  14. A comparison of Tennessee Williams' Summer and smoke and The eccentricities of a nightingale

    E-Print Network [OSTI]

    Boyd, Shirley Lois

    1978-01-01T23:59:59.000Z

    A COMPARISON OF TENNESSEE WILLIAMS ' SUMMER AND SMOKE AND THE ECCENTRICITIES OF A N1GHT1NGALE A Thesi s by S HIRLEY LOIS BOYD Submitted to the Graduate College of Texas A&M University in partial fulfillment of the requirement for the degree... of MASTER OF ARTS May 197B Major Subject: English A COMPARISON OF TENNESSEE WILLIAMS' SUMMER AND SMOKE AND THE ECCENTRICITIES OF A NIGHTINGALE A Thesi s by SHIRLEY LOIS BOYD Approved as to style and content by: g'~t. &i7 'i IL. Chairman of Commi...

  15. Tennessee Oversight Agreement annual report, May 31, 1994--June 30, 1995

    SciTech Connect (OSTI)

    NONE

    1995-09-01T23:59:59.000Z

    The Tennessee Department of Environment and Conservation`s DOE Oversight Division (TDEC/DOE-O) is responsible for assuring the citizens of Tennessee that their health, safety and environment on the Oak Ridge Reservation are protected and that appropriate remedial action is taken to provide this protection. TDEC/DOE-O has five program sections that reflect the organizational structure of the TDEC Bureau of Environment Divisions, as well as DOE`s Environmental Safety and Health, Waste Management, and Environmental Restoration Programs.

  16. Preterites and past participles in the Tennessee Civil War Veterans Questionnaires

    E-Print Network [OSTI]

    Abney, Lisa Jo

    1988-01-01T23:59:59.000Z

    , the eastern section of Tennessee was inhabited by some 35,000 people. The lower half of East Tennessee and Cumberland Plateau were unsettled u n t i l the 1800's. By 1835, with the removal of the Indians, the counties of Polk, Hamilton, and Bradley were... and the Cumberland Plateau, the coal of the plateau, the stone of the Cumberlands, and the copper of the lower Unakas. The area quickly grew, and between 1880-1910 the population doubled i n areas such as Polk and Marion counties, which were the centers...

  17. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-07-07T23:59:59.000Z

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  18. Testing and analyses of the TN-24P PWR spent-fuel dry storage cask loaded with consolidated fuel

    SciTech Connect (OSTI)

    McKinnon, M A; Michener, T E; Jensen, M F; Rodman, G R

    1989-02-01T23:59:59.000Z

    A performance test of a Transnuclear, Inc. TN-24P storage cask configured for pressurized water reactor (PWR) spent fuel was performed. The work was performed by the Pacific Northwest Laboratory (PNL) and Idaho National Engineering Laboratory (INEL) for the US Department of Energy Office of Civilian Radioactive Waste Management (OCRWM) and the Electric Power Research Institute. The performance test consisted of loading the TN-24P cask with 24 canisters of consolidated PWR spent fuel from Virginia Power's Surry and Florida Power and Light's Turkey Point reactors. Cask surface and fuel canister guide tube temperatures were measured, as were cask surface gamma and neutron dose rates. Testing was performed with vacuum, nitrogen, and helium backfill environments in both vertical and horizontal cask orientations. Transnuclear, Inc., arranged to have a partially insulated run added to the end of the test to simulate impact limiters. Limited spent fuel integrity data were also obtained. From both heat transfer and shielding perspectives, the TN-24P cask with minor refinements can be effectively implemented at reactor sites and central storage facilities for safe storage of unconsolidated and consolidated spent fuel. 35 refs., 93 figs., 17 tabs.

  19. Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta

    E-Print Network [OSTI]

    Svane, Axel Torstein

    69,71 Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta Department of Physics properties of wurtzite GaN are studied by Ga nuclear magnetic resonance NMR in a GaN bulk crystal containing GaN is a wide band-gap semiconductor which crystallizes in the hexagonal wurtzite structure

  20. Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions Y Abstract Compositionally abrupt InGaP/GaAs heterojunctions grown by gas-source molecular beam epitaxy have the InGaP layer show non-uniform In and Ga distribution. About 1.5 nm of transition region

  1. Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs Feng Gao1, USA tpalacios@mit.edu; (617) 324-2395 Keywords: AlGaN/GaN HEMTs, reliability, moisture, electro-chemical reactions Abstract The nature of structural degradation in AlGaN/GaN high electron mobility transistors

  2. Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High

    E-Print Network [OSTI]

    Li, Yat

    Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors, 2006 ABSTRACT We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire-organic chemical vapor deposition (MOCVD). Transmission electron microscopy (TEM) studies reveal that the GaN/ AlN/AlGaN

  3. Beta decay of Ga-62 

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

  4. Type B Accident Investigation, Subcontractor Employee Personal Protective Equipment Ignition Incident on February 18, 2003, at the East Tennessee Technology Park, Oak Ridge, Tennessee

    Broader source: Energy.gov [DOE]

    On February 18, 2003, a general laborer employed at the East Tennessee Technology Park (ETTP) by MACTEC Constructors, Inc. (MACTEC) was performing rebar removal with a gas-powered cut-off machine. MACTEC is a subcontractor to Bechtel Jacobs Company LL (BJC). The sparks from the cut-off machine ignited the right leg of his 100% cotton anticontamination (anti-c) coveralls and the plastic bootie.

  5. Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

    SciTech Connect (OSTI)

    Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

    2013-08-19T23:59:59.000Z

    We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

  6. System Description for the K-25/K-27 D&D Project Polyurethane Foam Delivery System, East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Boris, G.

    2008-02-21T23:59:59.000Z

    The Foam Delivery System used in the decontamination and decommissioning (D&D) project for the K-25/K-27 Buildings at the East Tennessee Technology Park (ETTP) is comprised of a trailer-mounted Gusmer{reg_sign} H20/35 Pro-TEC Proportioning Unit and the associated equipment to convey electrical power, air, and foam component material to the unit. This high-pressure, plural-component polyurethane foam pouring system will be used to fill process gas and non-process equipment/piping (PGE/P) within the K-25/K-27 Buildings with polyurethane foam to immobilize contaminants prior to removal. The system creates foam by mixing isocyanate and polyol resin (Resin) component materials. Currently, the project plans to utilize up to six foaming units simultaneously during peak foaming activities. Also included in this system description are the foam component material storage containers that will be used for storage of the component material drums in a staging area outside of the K-25/K-27 Buildings. The Foam Delivery System and foam component material storage enclosures (i.e., Foaming Component Protective Enclosures) used to store polymeric methylene diphenyl diisocyanate (PMDI) component material are identified as Safety Significant (SS) Structures, Systems and Components (SSC) in the Documented Safety Analysis (DSA) for the project, Documented Safety Analysis for the K-25 and K-27 Facilities at the East Tennessee Technology Park, Oak Ridge, Tennessee, DSA-ET-K-25/K-27-0001.

  7. Proceedings of the 2013 Joint Rail Conference April 15-18, 2013, Knoxville, Tennessee, USA

    E-Print Network [OSTI]

    Barkan, Christopher P.L.

    American operating environment differs than the operating practices found throughout much of the rest freight and intercity passenger traffic. One of the challenges created by this operating environmentProceedings of the 2013 Joint Rail Conference JRC2013 April 15-18, 2013, Knoxville, Tennessee, USA

  8. Geoarchaeological Investigation of the Coats-Hines Site (40WM31), Williamson County, Tennessee

    E-Print Network [OSTI]

    Schmalle, Kayla Anne

    2013-07-24T23:59:59.000Z

    The Coats-Hines site (40WM31) is a potential pre-Clovis site located in Franklin, Tennessee. The site rests, geographically, at the convergence of the Central Basin and Western Highland Rim. The site was discovered during the construction of a...

  9. Form 207 Version Date: 5/31/07 Page 1 of 4 East Tennessee State University

    E-Print Network [OSTI]

    Karsai, Istvan

    Form 207 Version Date: 5/31/07 Page 1 of 4 Form 207 East Tennessee State University ETSU. CURRENT APPROVAL DATE: D. Location(s) Where Study is Being Conducted: ETSU VAMC JCMC Other MSHA Site: Name: ETSU Department & Box #: Off Campus Address: Phone: Pager: Fax: Email Address: Study Contact

  10. City of Knoxville, Tennessee City Council Resolution for solar PV system

    Office of Energy Efficiency and Renewable Energy (EERE)

    This document is a scan of the resolution, dated July 26, 2011, for the approval of the City of Knoxville, Tennessee to use $250,000 of EECBG funding for finding innovative financing mechanisms for a planned installation of a 90-kW solar PV system.

  11. Jose March-Leuba Ph.D. in Nuclear Engineering: University of Tennessee, 1984

    E-Print Network [OSTI]

    Measurements & Control, Nuclear Science and Technology Division. · From 1991 ­ 1992, Dr. March;Nuclear Engineering and Design, Nuclear Technology and as a member of the Technical Program CommitteesJose March-Leuba Ph.D. in Nuclear Engineering: University of Tennessee, 1984 M. S. in nuclear

  12. John T. Mihalczo PhD. in Nuclear Engineering : University of Tennessee, 1970

    E-Print Network [OSTI]

    , just as his early work in experiments for nuclear criticality safety for Y-12 impacted national in nuclear criticality safety, nuclear weapons identification, nuclear materials processing, and nuclearJohn T. Mihalczo PhD. in Nuclear Engineering : University of Tennessee, 1970 Masters in Physics

  13. Health-hazard evaluation report HETA 83-186-1628, Raytheon Missile Systems Division, Bristol, Tennessee

    SciTech Connect (OSTI)

    Salisbury, S.; Lucas, C.

    1985-09-01T23:59:59.000Z

    Environmental and breathing-zone samples were analyzed for cutting-oil mists, metal working fluids, and mineral spirits at Raytheon Missile Systems Divisions, Bristol, Tennessee in July, 1985. The evaluation was requested confidentially to investigate the occurrence of skin rashes in Machine-Department employees.

  14. Waterbird and Food Resource Responses to Winter Drawdown in the east Tennessee River Valley

    E-Print Network [OSTI]

    Gray, Matthew

    ) Replenishment of Fat Reserves Introduction Migratory Stopovers: Critical for Survival Shallowly Flooded Mudflats (Acreage) of Mudflats 2) Waterbird Use and Activities on Mudflats 3) Food Resource Abundance (i" Drawdown Mudflat Exposure Late July ­ Early Aug. #12;5 East Tennessee Chickamauga Reservoir Hiwassee River

  15. Transportation impacts on the Tennessee highway system proposed monitored retrievable storage. Final report

    SciTech Connect (OSTI)

    Cobble, C.

    1985-12-12T23:59:59.000Z

    The issue of the transport of spent fuels to the proposed monitored retrievable storage facility in Tennessee is discussed. Relevant issues include the ability of the roads and bridges on the transport routes to handle the weight of the trucks. (CBS)

  16. Transportation impacts on the Tennessee highway system proposed monitored retrievable storage

    SciTech Connect (OSTI)

    Cobble, C.

    1985-12-12T23:59:59.000Z

    The issue of the transport of spent fuels to the proposed monitored retrievable storage facility in Tennessee is discussed. Relevant issues include the ability of the roads and bridges on the transport routes to handle the weight of the trucks. (CBS)

  17. Escape into illusions of the South in characters of Tennessee Williams

    E-Print Network [OSTI]

    Van Nieuwenhuize, Paul Franklin

    1963-01-01T23:59:59.000Z

    Named Desire. (New York, 1947), -. 13. 9 Williams, Tennessee. Me &ose Tattoo. Reprinted in Contem=crar Drama, ed. Stanley Clayes and David S=ercer. New York, 19~2 , p. 433. 22 and bowl, and on the wall a coloured lithograph of blindfolaed Hope...

  18. Fault Diagnosis with Bayesian Networks: Application to the Tennessee Eastman Process

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Fault Diagnosis with Bayesian Networks: Application to the Tennessee Eastman Process Sylvain VERRON is to present and evaluate the performance of a new procedure for industrial process diagnosis. This method are not very efficient in the space described by all variables of the process, an identification of impor- tant

  19. a Departtnent of Ecology and Er:olurionaty Biology, Unisersit?; of Tennessee, Kttoxrille, TN 37996, USA b Dkparnnenr d'Oc6anograplzie, Universite du Quebec ii Ritnouski, Ritnotrski, Que. 6X. 3A1, Canada

    E-Print Network [OSTI]

    Daly, Kendra L.

    ) are known to be the sites of large accumulations of biomass of * Corresponding author. Fax: + 1 423 974 3067. E-mail: wosmith@utk.edu. ters in the same region (Stirling and Cleator, 1981; Massom, 1988 productivity of polynyas might be transferred to higher trophic levels and result in a higher biomass

  20. Interim Letter Report - Verification Survey of Partial Grid E9, David Witherspoon, Inc. 1630 Site Knoxville, Tennessee

    SciTech Connect (OSTI)

    P.C. Weaver

    2008-06-12T23:59:59.000Z

    Conduct verification surveys of available grids at the DWI 1630 in Knoxville, Tennessee. A representative with the Independent Environmental Assessment and Verification (IEAV) team from ORISE conducted a verification survey of a partial area within Grid E9.

  1. EA-1113: Lease of Parcel ED-1 of the Oak Ridge Reservation By The East Tennessee Council

    Broader source: Energy.gov [DOE]

    This EA evaluates the potential environmental impacts associated with the proposed lease of 957.16 acres of the Oak Ridge Reservation to the East Tennessee Economic Council (ETEC). ETEC proposes ...

  2. Groundwater Transport of Organic Compounds in Old Salvage Yard, Oak Ridge, TN - 12089

    SciTech Connect (OSTI)

    Malek-Mohammadi, Siamak [Civil Engineering and Construction Department, Bradley University, Peoria, IL 61625 (United States); Tachiev, Georgio; Roelant, David [Applied Research Center, Florida International University, Miami, FL 33174 (United States); Bostick, Kent; Daniel, Anamary [Pro2Serve Professional Project Services, Inc., Oak Ridge, TN 37830 (United States)

    2012-07-01T23:59:59.000Z

    In 1950's and early 1960's during production of nuclear weapons at the US Department of Energy Y-12 National Security Complex in Oak Ridge TN, volatile organic compounds (VOCs) as well as heavy metals, nitrates, and radionuclides were released to the environment. Field investigations revealed that much of this contamination is still present in soil, bedrock, and groundwater. Operational buildings and old disposal facilities at the site have been identified as major sources of contamination. The Old Salvage Yard (OSY) on the western side of the site has long been characterized as the major source of VOC contamination in soil and groundwater. In order to analyze the fate and transport of VOC contamination- including tetrachloroethene (PCE), 1,2- dichloroethene (1,2-DCE), cis-1,2-dichloroethene (cis-1,2-DCE) and vinyl chloride (VC) - in groundwater and soil at the vicinity of OSY, an integrated surface and subsurface flow and transport model has been developed for the Y-12 NSC using the hydrodynamic and transport numerical package, MIKE-SHE. Hydrogeological characteristics of the site such as hydraulic conductivity, and transport parameters such as partitioning coefficients were varied in an effort to delineate subsurface flow and transport pathways, potential downstream impacts on Upper East Fork Poplar Creek, and the potential risk to industrial workers involved in related Decontamination and Decommissioning (D and D) activities. The simulation results were compared with the analytical modeling results previously performed by McLane Environmental Inc. using SESOIL-AT123D. Specific simulations have been performed to investigate the effect of possible remedial action (removing the contaminated surface soil layers) on the fate and transport of VOCs. The results of the MIKE-SHE reported here can be considered as an upper limit for the predicted concentrations. Based on MIKE-SHE results, PCE, 1,2 DCE, cis-1,2-DCE, and VC are sources in soil with potential to equal or exceed industrial groundwater hazard and risk levels at the vicinity of OSY. VOC contaminants in soil and groundwater will decay below industrial groundwater risk and hazard levels within approximately 20 years. Excavation of surface soil layers at the site will considerably reduce the concentration of VOCs in groundwater and the possibility of migration of VOCs to surface waters. (authors)

  3. Results for the Independent Sampling and Analysis of Used Oil Drums at the Impact Services Facility in Oak Ridge, TN

    SciTech Connect (OSTI)

    none,

    2013-04-25T23:59:59.000Z

    The U.S. Department of Energy (DOE) requested that Oak Ridge Associated Universities (ORAU), via the Oak Ridge Institute for Science and Education (ORISE) contract, perform independent sampling and analysis of used oils contained within eight 55 gallon drums stored at the former IMPACT Services facility, located at the East Tennessee Technology Park in Oak Ridge, Tennessee. These drums were originally delivered by LATA Sharp Remediation Services (LSRS) to IMPACT Services on January 11, 2011 as part of the Bldg. K-33 demolition project, and the drums plus contents should have been processed as non-hazardous non-radiological waste by IMPACT Services. LSRS received a certificate of destruction on August 29, 2012 (LSRS 2012a). However, IMPACT Services declared bankruptcy and abandoned the site later in 2012, and eight of the original eleven K-33 drums are currently stored at the facility. The content of these drums is the subject of this investigation. The original drum contents were sampled by LSRS in 2010 and analyzed for gross alpha, gross beta, and polychlorinated biphenyls (PCBs), using both compositing and grab sampling techniques. The objective of this 2013 sample and analysis effort was to duplicate, to the extent possible, the 2010 sampling and analysis event to support final disposition decisions. Part of that decision process includes either verifying or refuting the assertion that oils that are currently stored in drums at the IMPACT Services facility originated from Bldg. K-33 equipment.

  4. EA-1113: Lease of Parcel ED-1 of the Oak Ridge Reservation By The East Tennessee Economic Council

    Broader source: Energy.gov [DOE]

    Lease of Parcel ED-1 of the Oak Ridge Reservation By The East Tennessee Economic Council This EA evaluates the potential environmental impacts for the proposed lease of 957.16 acres of the Oak Ridge Reservation to the East Tennessee Economic Council. ETEC proposes to develop an industrial park on the leased site to provide employment opportunities for DOE and contractor employees affected by decreased federal funding.

  5. Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system

    E-Print Network [OSTI]

    Coldren, Larry A.

    Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system Erik J InGaAs/InGaAsP/InGaP material system. © 2005 American Institute of Physics. DOI: 10 of achieving QWI in such active regions.3,4 However, InGaAs/InGaAsP/InGaP-based de- vices offer numerous

  6. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23T23:59:59.000Z

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  7. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01T23:59:59.000Z

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  8. AlGaAs/InGaAs/AlGaAs Double Barrier

    E-Print Network [OSTI]

    Perera, A. G. Unil

    -state Er. Tunneling Quantum Dot Sensors for Multi-band Infrared and Terahertz Radiation Detection G radiation detection are demonstrated. In T-QDIP structures, photoabsorption takes place in InGaAs QDs (due

  9. Fiscal Year 2007 Phased Construction Completion Report for the Zone 2 Soils, Slabs, and Subsurface Structures at East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    RSI

    2008-03-01T23:59:59.000Z

    The purpose of this Phased Construction Completion Report (PCCR) is to present the fiscal year (FY) 2007 results of characterization activities and recommended remedial actions (RAs) for 11 exposure units (EUs) in Zone 2 (Z2-01, Z2-03, Z2-08, Z2-23, Z2-24, Z2-28, Z2-34, Z2-37, Z2-41, Z2-43, and Z2-44) at the East Tennessee Technology Park (ETTP), which is located in the northwest corner of the U.S. Department of Energy (DOE) Oak Ridge Reservation in Oak Ridge, Tennessee (Fig. 1). ETTP encompasses a total land area of approximately 5000 acres that has been subdivided into three zones--Zone 1 ({approx}1400 acres), Zone 2 ({approx}800 acres), and the Boundary Area ({approx}2800 acres). Zone 2, which encompasses the highly industrialized portion of ETTP shown in Fig. 1, consists of all formerly secured areas of the facility, including the large processing buildings and direct support facilities; experimental laboratories and chemical and materials handling facilities; materials storage and waste disposal facilities; secure document records libraries; and shipping and receiving warehouses. The Zone 2 Record of Decision for Soil, Buried Waste, and Subsurface Structure Actions in Zone 2, East Tennessee Technology Park, Oak Ridge, Tennessee (DOE 2005) (Zone 2 ROD) specifies the future end use for Zone 2 acreage as uncontrolled industrial for the upper 10 ft of soils. Characterization activities in these areas were conducted in compliance with the Zone 2 ROD and the Dynamic Verification Strategy (DVS) and data quality objectives (DQOs) presented in the Remedial Design Report/Remedial Action Work Plan for Zone 2 Soils, Slabs, and Subsurface Structures, East Tennessee Technology Park, Oak Ridge, Tennessee (DOE 2007) (Zone 2 RDR/RAWP). The purpose of this PCCR is to address the following: (1) Document DVS characterization results for the accessible EUs in FY 2007; (2) Describe and document the risk evaluation for each EU, and determine if the EU met the Zone 2 ROD requirements for unrestricted industrial use to 10 ft bgs; (3) Identify additional areas not defined in the Zone 2 ROD that require remediation based on the DVS evaluation results; and (4) Describe the RAs performed in Zone 2. The Zone 2 ROD divided the Zone 2 area into 7 geographic areas and 44 EUs. To facilitate the DQOs of the DVS process, the Zone 2 RDR/RAWP regrouped the 44 EUs into 12 DQO scoping EU groups. These groups facilitated the DQO process by placing similar facilities and their support facilities together and allowed identification of data gaps. The EU groups were no longer pertinent after DQO planning was completed, and characterization was conducted as areas became accessible. As the opportunity to complete characterization became available, the planned DVS program was executed and completed in FY 2007 for the 11 EUs addressed in this document. The main body of this report describes both the DVS process and scope of work performed and the RAs completed. The scope and approach for performing DVS activities performed in FY 2007 that lead to action/no further action decisions are presented in Sects. 2 through 4. RAs performed in FY 2007 are presented in Sects. 5 through 10. Future land use is described in Sect. 11, and the status of all Zone 2 EUs as of this PCCR is presented in Sect. 12.

  10. Knoxville, Tennessee: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE)

    Broader source: Energy.gov [DOE]

    This brochure provides an overview of the challenges and successes of Knoxville, TN, a 2008 Solar America City awardee, on the path toward becoming a solar-powered community. Accomplishments, case studies, key lessons learned, and local resource information are given.

  11. A Review of Tennessee's Regulatory Framework Relative to Habitat Conservation Planning on the

    E-Print Network [OSTI]

    Gray, Matthew

    Industrial & Municipal Wastewater Stormwater - Municipal (MS4) - Construction Habitat Alteration Section 404 SUPPLY PROJECTS INSTREAM FLOW STORMWATER/ POLLUTED RUNOFF WASTEWATER TREATMENT #12;3 Cumberland HCP, land use regulations #12;5 State Implementation PERMITS Federal Clean Water Act TN Water Pollution

  12. Fiscal Year 2008 Phased Construction Completion Report for EU Z2-33 in Zone 2, East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Bechtel Jacobs

    2008-09-11T23:59:59.000Z

    The Record of Decision for Soil, Buried Waste, and Subsurface Structure Actions in Zone 2, East Tennessee Technology Park, Oak Ridge, Tennessee (DOE/OR/01-2161&D2) (Zone 2 ROD) acknowledged that most of the 800 acres in Zone 2 were contaminated, but that sufficient data to confirm the levels of contamination were lacking. The Zone 2 ROD further specified that a sampling strategy for filling the data gaps would be developed. The Remedial Design Report/Remedial Action Work Plan for Zone 2 Soils, Slabs, and Subsurface Structures, East Tennessee Technology Park, Oak Ridge, Tennessee (DOE/OR/01-2224&D3) (Zone 2 RDR/RAWP) defined the sampling strategy as the Dynamic Verification Strategy (DVS), generally following the approach used for characterization of the Zone 1 exposure units (EUs). The Zone 2 ROD divided the Zone 2 area into seven geographic areas and 44 EUs. To facilitate the data quality objectives (DQOs) of the DVS process, the Zone 2 RDR/RAWP regrouped the 44 EUs into 12 DQO scoping EU groups. These groups facilitated the DQO process by placing similar facilities and their support facilities together and allowing identification of data gaps. The EU groups were no longer pertinent after DQO planning was completed and characterization was conducted as areas became accessible. As the opportunity to complete characterization became available, the planned DVS program and remedial actions (RAs) were completed for EU Z2-33. Remedial action was also performed at two additional areas in adjacent EU Z2-42 because of their close proximity and similar nature to a small surface soil RA in EU Z2-33. Remedial actions for building slabs performed in EU Z2-33 during fiscal year (FY) 2007 were reported in the Fiscal Year 2007 Phased Construction Completion Report for the Zone 2 Soils, Slabs, and Subsurface Structures at East Tennessee Technology Park, Oak Ridge, Tennessee (DOE/OR/01-2723&D1). Recommended RAs for EU Z2-42 were described in the Fiscal Year 2006 Phased Construction Completion Report for the Zone 2 Soils, Slabs, and Subsurface Structures at East Tennessee Technology Park, Oak Ridge, Tennessee (DOE/OR/01-2317&D2). Remedial actions performed in the Balance of Site (BOS) Laboratory Area of EU Z2-33 and two small areas in EU Z2-42 are described in Sects. 5 through 10 of this Phased Construction Completion Report (PCCR). The purpose of this PCCR is to address the following: (1) Document DVS characterization results for EU Z2-33; (2) Describe and document the risk evaluation and determine if the EU meets the Zone 2 ROD requirements for unrestricted industrial use to 10 ft bgs; (3) Identify additional areas not defined in the Zone 2 ROD that require remediation based on the DVS evaluation results; and (4) Describe RAs performed in the EU Z2-33 BOS Laboratory Area and two small areas in EU Z2-42. Approximately 18 acres in EU Z2-33 are addressed in this PCCR. Based on the results of the DVS evaluation and RAs performed, all 18 acres are recommended for unrestricted industrial use to 10 ft bgs. Three Federal Facility Agreement sites are addressed and recommended for no further action within this acreage, including: (1) K-1004-L Recirculating Cooling Water Lines Leak Sites; (2) K-1044 Heavy Equipment Repair Shop; and (3) K-1015-A Laundry Pit. Remedial actions for EU Z2-33 were developed in response to DVS characterization results described in the EU Z2-33 Technical Memorandum (Appendix A) and to support reindustrialization of the East Tennessee Technology Park as a commercial industrial park. Remediation criteria were designed for the protection of a future industrial worker who normally would not have the potential for exposure to soil below 10ft bgs. Accordingly, the Zone 2 ROD required land use controls to prevent disturbance of soils below 10 ft deep and to restrict future land use to industrial/commercial activities. In response to stakeholder comments, the U.S. Department of Energy agreed to re-evaluate the need for such land use restrictions. This document includes a screening evaluation to determine the likel

  13. Composition and Interface Analysis of InGaN/GaN Multiquantum...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells...

  14. Preliminary direct heat geothermal resource assessment of the Tennessee Valley region

    SciTech Connect (OSTI)

    Staub, W.P.

    1980-01-01T23:59:59.000Z

    A preliminary appraisal of the direct heat geothermal energy resources of the Tennessee Valley region has been completed. This region includes Kentucky, Tennessee and parts of adjacent states. Intermediate and deep aquifers were selected for study. Basement and Top-of-Knox structure and temperature maps were compiled from oil and gas well data on file at various state geological survey offices. Results of this study indicate that the New Madrid seismic zone is the only area within the region that possesses potential for direct heat utilization. In other areas geothermal energy is either too deep for economical extraction or it will not be able to compete with other local energy resources. The only anomalously high temperature well outside the New Madrid seismic zone was located in the Rome Trough and near the central part of the eastern Kentucky coal basin. Geothermal energy in that region would face strong competition from coal, oil and natural gas.

  15. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

    2010-10-14T23:59:59.000Z

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  16. PRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS

    E-Print Network [OSTI]

    McCluskey, Matthew

    -µm thick GaN layer deposited on a sapphire substrate, and it is capped by a 0.2-µm GaN:Mg pPRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS W. Shan,* J.W. Ager pressure on optical transitions in InGaN/GaN multiple quantum wells (MQWs) has been studied

  17. Free carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1

    E-Print Network [OSTI]

    As, Donat Josef

    ) substrate,7 with GaN and AlGaN layer thickness of 600 nm and 30 nm, respectively. The layer thicknessFree carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1 T. Li,1 J. Y. Huang,1 F. A (Received 24 February 2012; accepted 19 March 2012; published online 3 April 2012) Cubic Al0.3Ga0.7N/GaN

  18. World Record Earned Value Management System Certification for Cleanup of the East Tennessee Technology Park, Oak Ridge, Tennessee, USA - 13181

    SciTech Connect (OSTI)

    Haynes, Ray; Hirschy, Anita [URS - CH2M Oak Ridge, LLC (UCOR), East Tennessee Technology Park D and D and Environmental Remediation Project, Oak Ridge, Tennessee 37830 (United States)] [URS - CH2M Oak Ridge, LLC (UCOR), East Tennessee Technology Park D and D and Environmental Remediation Project, Oak Ridge, Tennessee 37830 (United States)

    2013-07-01T23:59:59.000Z

    On projects that require Earned Value Management (EVMS) Certification, it is critical to quickly prepare for and then successfully obtain certification. This is especially true for government contracts. Projects that do poorly during the review are subject to financial penalties to their company and they lose creditability with their customer creating problems with the project at the outset. At East Tennessee Technology Park (ETTP), we began preparing for Department of Energy (DOE) certification early during proposal development. Once the contract was awarded, while still in transition phase from the previous contractor to our new company, we immediately began reviewing the project controls systems that were in place on the project and determined if any replacements needed to be made immediately. The ETTP contract required the scheduling software to be upgraded to Primavera P6 and we determined that no other software changes would be done prior to certification. Next, preparation of the Project Controls System Description (PCSD) and associated procedures began using corporate standards as related to the project controls systems. During the transition phase, development was started on the Performance Measurement Baseline which is the resource loaded schedule used to measure our performance on the project and which is critical to good Earned Value Management of the project. Early on, and throughout the baseline review, there was positive feedback from the Department of Energy that the quality of the new baseline was good. Having this superior baseline also contributed to our success in EVMS certification. The combined companies of URS and CH2M Hill had recent experience with certifications at other Department of Energy sites and we were able to capitalize on that knowledge and experience. Generic PCSD and procedures consistent with our co-operations approach to Earned Value Management were available to us and were easily tailorable to the specifics of our contract and site. We also had corporate EVMS experts available to us so as to draw upon their recent certification experiences with lessons learned. This knowledge was especially helpful for training of personnel that were involved in the certification which included Project Controls, Project Management and Control Account Managers. We were also able to bring in these corporate experts to assist with our training efforts. To assure our readiness for the review, we conducted a 'White Hat' review. The 'White Hat' team consisted of corporate experts in EVMS along with an industry expert in EVMS from Humphrey and Associates. This review identified early any weaknesses that we had so corrections could be enacted prior to the EVMS Certification Readiness Review. It also helped give the evaluators confidence that we had done proper due diligence prior to their arrival. Also critical to our success, was early communication with our evaluators. It is important to start the communications early to ensure you understand the expectations of the certification team and the process that will be used during the certification. Communication through the entire process is critical to understand expectations and issues along the way. Very important to the overall process was management commitment, support and reinforcement. Management made sure that all personnel involved knew the importance and made preparations a priority. This was noted as a key strength by the evaluators during the out-brief. As a result of our preparation, our review yielded one Corrective Action Report (CAR) and two Continuous Improvement Opportunities (CIOs). The Certification team in their out-brief explained that this was the lowest number of CARs and CIOs in the history of EVMS certifications in the DOE Complex. (authors)

  19. InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy with a valved phosphorus cracker

    E-Print Network [OSTI]

    Woodall, Jerry M.

    InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular; accepted 17 November 1995 The growth and device characterization of an InGaP/GaAs double-quality phosphorus-containing compounds.1­4 The growth of high-performance InGaP/ GaAs and InGaAs/InP single

  20. InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P. C. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Baca, A. G. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Li, N. Y. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Xie, X. M. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Hou, H. Q. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Armour, E. [Emcore Corporation, Somerset, New Jersey 08873 (United States)] [Emcore Corporation, Somerset, New Jersey 08873 (United States)

    2000-04-17T23:59:59.000Z

    We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the breakdown voltage (BV{sub CEO}) is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with {delta} doping is inserted at the base-collector junction. The improved device has a peak current gain of seven with ideal current-voltage characteristics. (c) 2000 American Institute of Physics.

  1. InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P.C.; Baca, A.G.; Li, N.Y.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-10T23:59:59.000Z

    The authors have demonstrated a functional NpN double heterojunction bipolar transistor (DHBT) using InGaAsN for base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs HBT. The lower V{sub ON} is attributed to the smaller bandgap (E{sub g}=1.20eV) of MOCVD grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the BV{sub CEO} is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs Hbts of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger {triangle}E{sub C} between InGaAsN and GaAs, a graded InGaAs layer with {delta}-doping is inserted at the base-collector junction. The improved device has a peak current gain of 7 with ideal IV characteristics.

  2. Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction

    E-Print Network [OSTI]

    Sirenko, Andrei

    Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied for x-ray diffraction and reciprocal space mapping of InGaN/GaN multiple-quantum-well MQW structures grown on the sidewalls of 10- m-wide triangular GaN ridges with 1-1.1 facets. Samples were produced

  3. GaN0.011P0.989–GaP Double-Heterostructure Red Light-Emitting Diodes Directly Grown on GaP Substrates

    E-Print Network [OSTI]

    Tu, Charles W

    2000-01-01T23:59:59.000Z

    and C. W. Tu, GaN diodes on GaP substrates, 2000. [7] J. W.on a GaN directly grown on a GaP substrate was successfullyDH) directly a GaN grown on a (100) GaP substrate. Fig. 1(a)

  4. Phased Construction Completion Report for Bldg. K-1401 of the Remaining Facilities Demolition Project at the East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Bechtel Jacobs

    2008-10-01T23:59:59.000Z

    This Phased Construction Completion Report documents the demolition of Bldg. K-1401, Maintenance Building, addressed in the Action Memorandum for the Remaining Facilities Demolition Project at East Tennessee Technology Park, Oak Ridge, Tennessee (DOE 2003a) as a Comprehensive Environmental Response, Compensation, and Liability Act of 1980 non-time-critical removal action. The objectives of the removal action (DOE 2003a) - to eliminate the source of potential contamination, to eliminate the threat of potential future releases, and/or to eliminate the threats to the general public and the environment - were met. The end state of this action is for the slab to remain with all penetrations sealed and grouted or backfilled. The basement and pits remain open. There is residual radiological and polychlorinated biphenyl contamination on the slab and basement. A fixative was applied to the area on the pad contaminated with polychlorinated biphenyls. Interim land-use controls will be maintained until final remediation decisions are made under the Zone 2 Record of Decision (DOE 2005a).

  5. Phased Construction Completion Report for Building K-1401 of the Remaining Facilities Demolition Project at the East Tennessee Technology Park Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Garland S.

    2008-03-01T23:59:59.000Z

    This Phased Construction Completion Report documents the demolition of Bldg. K-1401, Maintenance Building, addressed in the Action Memorandum for the Remaining Facilities Demolition Project at East Tennessee Technology Park, Oak Ridge, Tennessee (DOE 2003a) as a Comprehensive Environmental Response, Compensation, and Liability Act of 1980 non-time-critical removal action. The objectives of the removal action (DOE 2003a) - to eliminate the source of potential contamination, to eliminate the threat of potential future releases, and/or to eliminate the threats to the general public and the environment - were met. The end state of this action is for the slab to remain with all penetrations sealed and grouted or backfilled. The basement and pits remain open. There is residual radiological and polychlorinated biphenyl contamination on the slab and basement. A fixative was applied to the area on the pad contaminated with polychlorinated biphenyls. Interim land-use controls will be maintained until final remediation decisions are made under the Zone 2 Record of Decision (DOE 2005a).

  6. Environmental Baseline Survey Report for the Title Transfer of Parcel ED-9 at the East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    SAIC

    2010-05-01T23:59:59.000Z

    This environmental baseline survey (EBS) report documents the baseline environmental conditions of the U. S. Department of Energy's (DOE's) Parcel ED-9 at the East Tennessee Technology Park (ETTP). Parcel ED-9 consists of about 13 acres that DOE proposes to transfer to Heritage Center, LLC (hereafter referred to as 'Heritage Center'), a subsidiary of the Community Reuse Organization of East Tennessee (CROET). The 13 acres include two tracts of land, referred to as ED-9A (7.06 acres) and ED-9B (5.02 acres), and a third tract consisting of about 900 linear feet of paved road and adjacent right-of-way, referred to as ED-9C (0.98 acres). Transfer of the title to ED-9 will be by deed under a Covenant Deferral Request (CDR) pursuant to Section 120(h)(3)(C) of the Comprehensive Environmental Response, Compensation, and Liability Act of 1980 (CERCLA). This report provides a summary of information to support the transfer of this government-owned property at ETTP to a non-federal entity.

  7. Covenant Deferral Request for the Proposed Transfer of Land Parcel ED-8 at the East Tennessee Technology Park, Oak Ridge, Tennessee - Final - May 2009

    SciTech Connect (OSTI)

    SAIC

    2009-05-01T23:59:59.000Z

    The United States Department of Energy (DOE) is proposing to transfer a land parcel (hereinafter referred to as 'the Property') designated as Land Parcel ED-8 at the East Tennessee Technology Park (ETTP) in Oak Ridge, Tennessee, by deed, and is submitting this Covenant Deferral Request (CDR) pursuant to Section 120(h)(3)(C) of the Comprehensive Environmental Response, Compensation, and Liability Act (CERCLA), as amended, and applicable U. S. Environmental Protection Agency (EPA) guidance. The Oak Ridge Reservation (ORR), which includes ETTP, was placed on the National Priorities List (NPL) in November 1989. Environmental investigation and cleanup activities are continuing at ETTP in accordance with CERCLA, the National Contingency Plan (NCP), and the Federal Facility Agreement (FFA). The FFA was entered into by the DOE-Oak Ridge Office (ORO), EPA Region 4, and the Tennessee Department of Environment and Conservation (TDEC) in 1991. The FFA establishes the schedule and milestones for environmental remediation of the ORR. The proposed property transfer is a key component of the Oak Ridge Performance Management Plan (ORPMP) for accelerated cleanup of the ORR. DOE, using its authority under Section 161(g) of the Atomic Energy Act of 1954 (AEA), proposes to transfer the Property to Heritage Center, LLC, a subsidiary of the Community Reuse Organization of East Tennessee (CROET), hereafter referred to as 'Heritage Center.' CROET is a 501(c)(3) not-for-profit corporation established to foster the diversification of the regional economy by re-utilizing DOE property for private-sector investment and job creation. The Property is located in the southern portion of ETTP and consists of approximately 84 acres proposed as the potential site for new facilities to be used for office space, industrial activities, or other commercial uses. The parcel contains both grassy fields located outside the ETTP 'main plant' area and infrastructure located inside the 'main plant' area. No buildings are included in the proposed ED-8 transfer. The buildings in ED-8 have already been transferred (Buildings K-1007, K-1580, K-1330, and K-1000). These buildings are not included in the transfer footprint of Land Parcel ED-8. A number of temporary structures, such as trailers and tents (non-real property), are located within the footprint. These temporary structures are not included in the transfer. DOE would continue to be responsible for any contamination resulting from DOE activities that is present on the property at the time of transfer but found after the date of transfer. The deed transferring the Property contains various restrictions and prohibitions on the use of the Property that are subject to enforcement pursuant to State Law Tennessee Code Annotated (T.C.A.) 68-212-225 and state real property law. These restrictions and prohibitions are designed to ensure protection of human health and the environment.

  8. AlGaAs/InGaAsN/GaAs PnP double heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P.C.; Baca, A.G.; Li, N.Y.; Sharps, P.R.; Hou, H.Q.; Laroche, J.R.; Ren, F.

    2000-01-11T23:59:59.000Z

    The authors have demonstrated a functional MOCVD-grown AlGaAs/InGaAsN/GaAsPnP DHBT that is lattice matched to GaAs and has a peak current gain ({beta}) of 25. Because of the smaller bandgap (E{sub g}=1.20eV)of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{sub ON} of 0.79 V, 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. The BV{sub CEO} is 12 V, consistent with its GaAs collector thickness and doping level.

  9. Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Mazumder, B.; Hurni, C. A.; Zhang, J. Y.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, M. H.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2012-08-27T23:59:59.000Z

    In this letter, we report on the interfacial abruptness of GaN/AlN/GaN heterostructures with pulsed laser atom probe tomography (APT). The samples were grown by plasma-assisted molecular beam epitaxy (MBE) under both metal-rich and N-rich conditions on both Ga-polar (0001) GaN templates and N-polar (0001) GaN substrates. An NH{sub 3} assisted MBE technique was involved to grow similar Ga-polar and N-polar structures on GaN:Fe substrates and GaN/Al{sub 2}O{sub 3} templates, respectively, for a comparison study. We find in all cases the interface with net positive polarization charge was chemically abrupt, whereas the interface with net negative polarization charge was diffuse. We discuss the implications on device design and performance. These data validate the efficiency of APT in studying interfaces for better performance in devices.

  10. Superior radiation-resistant properties of InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Yamaguchi, M.; Okuda, T.; Taylor, S.J.; Takamoto, T. [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan)] [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan); Ikeda, E.; Kurita, H. [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)

    1997-03-01T23:59:59.000Z

    The observation of minority-carrier injection-enhanced annealing of radiation damage to InGa{sub 0.5}P{sub 0.5}/GaAs tandem solar cells is reported. Radiation resistance of InGaP/GaAs tandem solar cells as is similar with GaAs-on-Ge cells have been confirmed with 1 MeV electron irradiations. Moreover, minority-carrier injection under light illumination and forward bias conditions is shown to enhance defect annealing in InGaP and to result in the recovery of InGaP/GaAs tandem solar cell properties. These results suggest that the InGaP/GaAs(/Ge) multijunction solar cells and InGaP-based devices have great potential for space applications. {copyright} {ital 1997 American Institute of Physics.}

  11. UTHSC: Eligibility Verification for Entitlements Act As of October 1, 2012, The University of Tennessee Health Science Center requests that all applicants

    E-Print Network [OSTI]

    Cui, Yan

    of Tennessee Health Science Center requests that all applicants applying for a public benefit (e.g. Academic to verify that persons seeking a "state public benefit" are a United States citizen or otherwise lawfully present in the United States. The University of Tennessee Health Science Center will verify the accuracy

  12. Barge loading facilities in conjunction with wood chipping and sawlog mill, Tennessee River Mile 145. 9R: Environmental assessment

    SciTech Connect (OSTI)

    Not Available

    1990-08-01T23:59:59.000Z

    The purpose of this Environmental Assessment (EA) is to evaluate the environmental consequences of approving, denying, or adopting reasonable alternatives to a request for barge loading facilities. These facilities would serve a proposed wood chipping and sawlog products operation at Tennessee River Mile (TRM) 145.9, right descending bank, (Kentucky Lake), in Perry County, Tennessee. The site is located between Short Creek and Peters Landing. The applicant is Southeastern Forest Products, L.P. (SFP), Box 73, Linden, Tennessee and the proposed facilities would be constructed on or adjacent to company owned land. Portions of the barge terminal would be constructed on land over which flood easement rights are held by the United States of America and administered by the Tennessee Valley Authority (TVA). The US Army Corps of Engineers (CE) and TVA have regulatory control over the proposed barge terminal facilities since the action would involve construction in the Tennessee River which is a navigable water of the United States. The wood chipping and sawlog products facilities proposed on the upland property are not regulated by the CE or TVA. On the basis of the analysis which follows, it has been determined that a modified proposal (as described herein) would not significantly affect the quality of the human environment, and does not require the preparation of an environmental impact statement. 8 refs.

  13. Beta decay of Ga-62

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    from the ex- perimental ft value for a 01?01 b decay between analog states with the relation @3# 0556-2813/2003/68~1!/015501~6!/$20.00 68 015501- of 62Ga . Hardy, V. E. Mayes, R. G. Neilson, M. Sanchez-Vega, and R. E. Tribble y, College Station...

  14. Annual Performance Evaluation of a Pair of Energy Efficient Houses (WC3 and WC4) in Oak Ridge, TN

    SciTech Connect (OSTI)

    Biswas, Kaushik [ORNL; Christian, Jeffrey E [ORNL; Gehl, Anthony C [ORNL; Jackson, Roderick K [ORNL; Boudreaux, Philip R [ORNL

    2012-04-01T23:59:59.000Z

    Beginning in 2008, two pairs of energy-saver houses were built at Wolf Creek in Oak Ridge, TN. These houses were designed to maximize energy efficiency using new ultra-high-efficiency components emerging from ORNL s Cooperative Research and Development Agreement (CRADA) partners and others. The first two houses contained 3713 square feet of conditioned area and were designated as WC1 and WC2; the second pair consisted of 2721 square feet conditioned area with crawlspace foundation and they re called WC3 and WC4. This report is focused on the annual energy performance of WC3 and WC4, and how they compare against a previously benchmarked maximum energy efficient house of a similar footprint. WC3 and WC4 are both about 55-60% more efficient than traditional new construction. Each house showcases a different envelope system: WC3 is built with advanced framing featured cellulose insulation partially mixed with phase change materials (PCM); and WC4 house has cladding composed of an exterior insulation and finish system (EIFS). The previously benchmarked house was one of three built at the Campbell Creek subdivision in Knoxville, TN. This house (CC3) was designed as a transformation of a builder house (CC1) with the most advanced energy-efficiency features, including solar electricity and hot water, which market conditions are likely to permit within the 2012 2015 period. The builder house itself was representative of a standard, IECC 2006 code-certified, all-electric house built by the builder to sell around 2005 2008.

  15. Environmental Management Waste Management Facility Proxy Waste Lot Profile 6.999 for Building K-25 West Wing, East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Rigsby V.P.

    2009-02-12T23:59:59.000Z

    In 1989, the Oak Ridge Reservation (ORR), which includes the East Tennessee Technology Park (ETTP), was placed on the Comprehensive Environmental Response, Compensation, and Liability Act of 1980 (CERCLA) National Priorities List. The Federal Facility Agreement (FFA) (DOE 1992), effective January 1, 1992, now governs environmental restoration activities conducted under CERCLA at the ORR. Following signing of the FFA, U.S. Department of Energy (DOE), U.S. Environmental Protection Agency (EPA), and the state of Tennessee signed the Oak Ridge Accelerated Cleanup Plan Agreement on June 18, 2002. The purpose of this agreement is to define a streamlined decision-making process to facilitate the accelerated implementation of cleanup, resolve ORR milestone issues, and establish future actions necessary to complete the accelerated cleanup plan by the end of fiscal year 2008. While the FFA continues to serve as the overall regulatory framework for remediation, the Accelerated Cleanup Plan Agreement supplements existing requirements to streamline the decision-making process. Decontamination and decommissioning (D&D) activities of Bldg. K-25, the original gaseous diffusion facility, is being conducted by Bechtel Jacobs Company LLC (BJC) on behalf of the DOE. The planned CERCLA action covering disposal of building structure and remaining components from the K-25 building is scheduled as a non-time-critical CERCLA action as part of DOE's continuous risk reduction strategy for ETTP. The K-25 building is proposed for D&D because of its poor physical condition and the expense of surveillance and maintenance activities. The K-25/K-27 D&D Project proposes to dispose of the commingled waste listed below from the K-25 west side building structure and remaining components and process gas equipment and piping at the Environmental Management Waste Management Facility (EMWMF) under waste disposal proxy lot (WPXL) 6.999: (1) Building structure (e.g. concrete floors [excluding basement slab], roofing, structural steel supports, interior walls, and exterior walls) and support system components including the recirculation cooling water (RCW); electrical; communication; fire protection; ventilation; process coolant; process lube oil; utilities such as steam, water and drain lines; (2) Process Piping; (3) Seal Exhaust Headers; (4) Seal Exhaust Traps; (5) Process Valves; (6) Differential Blind Multipliers (DBM)/Partial Blind Multipliers (PBM); and (7) Aftercoolers (also known as Intercell coolers). Converters and compressors while components of the process gas system, are not included in this commingled waste lot. On January 6, 2009, a meeting was held with EPA, TDEC, DOE and the team for the sole purpose of finalizing the objectives, format, and content of WPXL 6.999. The objective of WPXL 6.999 was to provide a crosswalk to the building structure and the PGE components profiles. This was accomplished by providing tables with references to the specific section of the individual profiles for each of the WLs. There are two building profiles and eight PGE profiles. All of the waste identified in the individual profiles will be commingled, shipped, and disposed exclusively under WPXL 6.999. The individual profiles were provided to the EPA and Tennessee Department of Environment and Conservation (TDEC) for information purposes only. This summary WPXL 6.999 will be submitted to EPA, TDEC, and DOE for review and approval. The format agreed upon by the regulators and DOE form the basis for WPXL 6.999. The agreed format is found on pages v and vi of the CONTENTS section of this profile. The disposal of this waste will be executed in accordance with the Action Memorandum for the Decontamination and Decommissioning of the K-25 and K-27 Buildings, East Tennessee Technology Park, Oak Ridge, Tennessee (DOE 2002), Removal Action Work Plan for the K-25 and K-27 Buildings, Process Equipment Removal and Demolition, K-25/K-27 Project, East Tennessee Technology Park, Oak Ridge, Tennessee (DOE 2008a); Waste Handling Plan for Demolition of the K-25 and K-27 Bui

  16. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    Logo GaN nanowires show more 3D piezoelectricity than bulk GaN admin / January 11, 2012 individual gallium nitride (GaN) nanowires showing strong piezoelectric effect in 3D. This is in spite of the fact that each nanowire only measures 100nm in diameter. While GaN is ubiquitous in optoelectronic

  17. Self-aligned AlGaN/GaN transistors for sub-mm wave applications

    E-Print Network [OSTI]

    Saadat, Omair I

    2010-01-01T23:59:59.000Z

    This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

  18. Invited Paper GaN HEMT reliability

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    Invited Paper GaN HEMT reliability J.A. del Alamo *, J. Joh Microsystems Technology Laboratories mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier

  19. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01T23:59:59.000Z

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  20. InAs=InGaP=GaAs heterojunction power Schottky rectifiers

    E-Print Network [OSTI]

    Woodall, Jerry M.

    InAs=InGaP=GaAs heterojunction power Schottky rectifiers A. Chen, M. Young and J.M. Woodall A low-matched InGaP on GaAs, to make a high-temperature power rectifier. The LT molecular beam epitaxy technique enables the formation of an abrupt interface between InAs and InGaP. This heterojunction rectifier

  1. Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs Rajkumar Santhakumar, Yi have been designed and fabricated using AlGaN/GaN HEMTs. One of them uses a standard HEMT for the unit-gate distributed amplifier achieves a CW peak output power of 1W and a PAE of about 16% at 4GHz. Index Terms -- GaN

  2. Role of strain in polarization switching in semipolar InGaN/GaN quantum wells

    E-Print Network [OSTI]

    Role of strain in polarization switching in semipolar InGaN/GaN quantum wells Qimin Yan,1,a Patrick November 2010 The effect of strain on the valence-band structure of 112¯2 semipolar InGaN grown on GaN D6 is calculated for GaN and InN using density functional theory with the Heyd­Scuseria­ Ernzerhof

  3. GaN/AlGaN heterojunction infrared detector responding in 814 and 2070 m ranges

    E-Print Network [OSTI]

    Perera, A. G. Unil

    GaN/AlGaN heterojunction infrared detector responding in 8­14 and 20­70 m ranges G. Ariyawansa, M October 2006 A GaN/AlGaN heterojunction interfacial work function internal photoemission infrared detector, the work demonstrates 54 m 5.5 THz operation of the detector based on 1s­2p± transition of Si donors in GaN

  4. The Funk Transform as a Penrose Transform T.N. Bailey M.G. Eastwood A.R. Gover L.J. Mason

    E-Print Network [OSTI]

    Gover, Rod

    The Funk Transform as a Penrose Transform T.N. Bailey M.G. Eastwood A.R. Gover L.J. Mason December 2, 1999 Abstract The Funk transform is the integral transform from the space of smooth even this transform as a limit in a certain sense of the Penrose transform from C P 2 to C P \\Lambda 2 . We exploit

  5. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

    SciTech Connect (OSTI)

    Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

    2012-01-01T23:59:59.000Z

    AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

  6. Explanation of Significant Differences for the Record of Decision for Interim Actions in Zone 1, East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Bechtel Jacobs

    2011-02-01T23:59:59.000Z

    Zone 1 is a 1400-acre area outside the fence of the main plant at The East Tennessee Technology Park (ETTP) in Oak Ridge, Tennessee. The Record of Decision for Interim Actions in Zone, ETTP (Zone 1 Interim ROD) (DOE 2002) identifies the remedial actions for contaminated soil, buried waste, and subsurface infrastructure necessary to protect human health and to limit further contamination of groundwater. Since the Zone 1 Interim Record of Decision (ROD) was signed, new information has been obtained that requires the remedy to be modified as follows: (1) Change the end use in Contractor's Spoil Area (CSA) from unrestricted industrial to recreational; (2) Remove Exposure Units (EU5) ZI-50, 51, and 52 from the scope of the Zone I Interim ROD; (3) Change the end use of the duct bank corridor from unrestricted industrial to restricted industrial; and (4) Remove restriction for the disturbance of soils below 10 feet in Exposure Unit (EU) Z1-04. In accordance with 40 Code of Federal Regulations (CFR) 300.435, these scope modifications are a 'significant' change to the Zone 1 Interim ROD. In accordance with CERCLA Sect. 117 (c) and 40 CFR 300.435 (c)(2)(i), such a significant change is documented with an Explanation of Significant Differences (ESD). The purpose of this ESD is to make the changes listed above. This ESD is part of the Administrative Record file, and it, and other information supporting the selected remedy, can be found at the DOE Information Center, 475 Oak Ridge Turnpike, Oak Ridge, Tennessee 37830, from 8:00 a.m. to 5:00 p.m., Monday through Friday. The ORR is located in Roane and Anderson counties, within and adjacent to the corporate city limits of Oak Ridge, Tennessee. ETTP is located in Roane County near the northwest corner of the ORR. ETTP began operation during World War II as part of the Manhattan Project. The original mission of ETTP was to produce enriched uranium for use in atomic weapons. The plant produced enriched uranium from 1945 until 1985. Uranium production was terminated in 1987. ORR was placed on the National Priorities List in 1989, so remediation activities are conducted under CERCLA. The primary contaminants of concern at ETTP follow: (1) In groundwater - volatile organic compounds (VOCs) at multiple locations (trichloroethene is generally the most prevalent compound); (2) In sediment - inorganic elements, radionuclides, and polychlorinated biphenyls; (3) In soil - inorganic elements, radionuclides, semivolatile organic compounds (particularly the polycyclic aromatic hydrocarbons), and VOCs; and (4) In facilities - radionuclides and polychlorinated biphenyls (abandoned facilities also pose a safety and health hazard to workers.) The purposes of the remedial actions selected in the Zone 1 Interim ROD are to allow unrestricted industrial use down to 10 feet and to remediate potential sources of groundwater contamination. Following is a summary of the major components of the Zone 1 Interim ROD remedy: (1) Excavation of the Blair Quarry burial area and associated contaminated soil; (2) Excavation of miscellaneous contaminated soil in the K-895 Cylinder Destruct Facility area and in the Powerhouse Area; (3) Removal of sludge and demolition of the K-710 sludge beds and Imhoff tanks; (4) Implementation of land use controls (LUCs); and (5) Characterization of soil and remediation of areas that exceed remediation levels.

  7. Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer

    SciTech Connect (OSTI)

    Chen, Z.; Denbaars, S. P. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106 (United States); Pei, Y.; Newman, S.; Chu, R.; Brown, D.; Keller, S.; Mishra, U. K. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Chung, R.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2009-03-16T23:59:59.000Z

    Semi-insulating (SI) GaN layers were grown on 4H-SiC substrates by inserting an AlGaN layer between the AlN buffer and the GaN layer. Secondary ion mass spectroscopy measurements showed that the AlGaN layer prevented Si from diffusing from the substrate into the GaN layer. X-ray diffraction and atomic force microscopy analyses showed that an optimized AlGaN interlayer does not degrade the crystal quality or surface morphology of the SI GaN. The room temperature mobility of an AlGaN/GaN heterostructure using this SI GaN was 2200 cm{sup 2}/V s. High electron mobility transistors (HEMTs) with 0.65 {mu}m long gates were also fabricated on these SI GaN buffers. A power density of 19.0 W/mm with a power added efficiency of 48% was demonstrated at 10 GHz at a drain bias of 78 V. These HEMTs also exhibited sharp pinch off, low leakage, and negligible dispersion.

  8. Engineering Evaluation Report on K-311-1 Floor Subsidence (2008 Annual Report) at the East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Knott R.B.

    2008-11-13T23:59:59.000Z

    The purpose of this task is to evaluate the effect of floor settlement on building structure, piping, and equipment foundations between column lines 1 and 2 and B and K of Bldg. K-311-1 (see Fig. A-1 in Appendix A) at East Tennessee Technology Park (ETTP), Oak Ridge, Tennessee. Revision 0 of this document covers the 2005 annual inspection. Revision 1 addresses the 2006 annual inspection, Revision 2 addresses the 2007 annual inspection, and Revision 3 covers the 2008 annual inspection, as indicated by the changed report title. A civil survey and visual inspection were performed. Only a representative number of points were measured during the 2008 survey. The exact location of a number of survey points in Table A-1 could not be accurately determined in the 2008 survey since these points had not been spray painted since 2003. The points measured are deemed adequate to support the conclusions of this report. Based on the survey and observations, there has been no appreciable change in the condition of the unit since the 2007 inspection. The subsidence of the floor presents concerns to the building structure due to the possible indeterminate load on the pipe gallery framing. Prior to demolition activities that involve the piping or removal of the equipment, such as vent, purge and drain and foaming, engineering involvement in the planning is necessary. The piping connected to the equipment is under stress, and actions should be implemented to relieve this stress prior to disturbing any of the equipment or associated piping. In addition, the load on the pipe gallery framing needs to be relieved prior to any activities taking place in the pipe gallery. Access to this area and the pipe gallery is not allowed until the stress is released.

  9. Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy Huajie Chen, Kista, Sweden Abstract Strain-compensated InGaAsP/InGaP superlattices are studied in cross- section. The strain compensated InGaAsP/InGaP/InP superlattices studied here have application for light sources

  10. AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN 1 epitaxially on AlGaN/GaN HFET structures by molecular beam epitaxy (MBE). Growth was first performed on GaN templates to establish epitaxial growth conditions. X-ray diffraction showed [001] TiO2 || [1010]GaN

  11. AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium; published 13 October 2004) Use of high-k gate dielectrics in AlGaN/GaN heterostructure field transconductance and pinchoff voltage. To achieve this, AlGaN/GaN metal-oxide-semiconductor heterostructure field

  12. In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device based on a

    E-Print Network [OSTI]

    Yang, Kyounghoon

    205 Abstract In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device basedBm at 2 GHz have been demonstrated from the fabricated device. 1. Introduction In recent years, AlGaN/GaN noise amplifier and switch. Superior results have been reported in microwave power performance of AlGaN/GaN

  13. A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design presents a new architecture for an AlGaN/GaN HEMT frequency doubler using the active integrated antenna. The antenna operates as a fundamental frequency reflector in this circuit. Using AlGaN/GaN with 1mm gate

  14. Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate,

    E-Print Network [OSTI]

    Boyer, Edmond

    Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Aristide Briand, 92.195 Meudon, France Abstract. Wide bandgap devices such as AlGaN/GaN High Electron of GR- bulges related respectively to AlGaN/GaN interface and quantum well are identified. Each GR

  15. Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2012-12-24T23:59:59.000Z

    Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

  16. 2012 ARPA-E Energy Innovation Summit Keynote Presentation (Frederick W. Smith, FedEx Corporation), with Introduction by Senator Lamar Alexander (TN)

    SciTech Connect (OSTI)

    Smith, Frederick W. (FedEx Corporation, Chairman, President and CEO) [FedEx Corporation, Chairman, President and CEO

    2012-04-24T23:59:59.000Z

    The third annual ARPA-E Energy Innovation Summit was held in Washington D.C. in February, 2012. The event brought together key players from across the energy ecosystem - researchers, entrepreneurs, investors, corporate executives, and government officials - to share ideas for developing and deploying the next generation of energy technologies. Following introduction by Senator Lamar Alexander of Tennessee, Frederick W. Smith, Chairman, President, and CEO of FedEx Corporation, gave the third keynote presentation of the day.

  17. 2012 ARPA-E Energy Innovation Summit Keynote Presentation (Frederick W. Smith, FedEx Corporation), with Introduction by Senator Lamar Alexander (TN)

    ScienceCinema (OSTI)

    Smith, Frederick W. (FedEx Corporation, Chairman, President and CEO)

    2014-04-09T23:59:59.000Z

    The third annual ARPA-E Energy Innovation Summit was held in Washington D.C. in February, 2012. The event brought together key players from across the energy ecosystem - researchers, entrepreneurs, investors, corporate executives, and government officials - to share ideas for developing and deploying the next generation of energy technologies. Following introduction by Senator Lamar Alexander of Tennessee, Frederick W. Smith, Chairman, President, and CEO of FedEx Corporation, gave the third keynote presentation of the day.

  18. 2003 East Tennessee Technology Park Annual Illness and Injury Surveillance Report

    SciTech Connect (OSTI)

    U.S. Department of Energy, Office of Health, Safety and Security, Office of Illness and Injury Prevention Programs

    2007-05-23T23:59:59.000Z

    Annual Illness and Injury Surveillance Program report for 2003 for the East Tennessee Technology Park (K-25).The U.S. Department of Energy’s (DOE) commitment to assuring the health and safety of its workers includes the conduct of epidemiologic surveillance activities that provide an early warning system for health problems among workers. The Illness and Injury Surveillance Program monitors illnesses and health conditions that result in an absence of workdays, occupational injuries and illnesses, and disabilities and deaths among current workers.

  19. Calendar years 1989 and 1990 monitoring well installation program Y-12 plant, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Not Available

    1991-10-01T23:59:59.000Z

    This report documents the well-construction activities at the Y-12 Plant in Oak Ridge, Tennessee during 1989 and 1990. The well- construction program consisted of installing seventy-five monitoring wells. Geologists from ERCE (formally the Engineering, Design and Geosciences Group) and Martin Marietta Energy Systems (Energy Systems), supervised and documented well-construction activities and monitored for health and safety concerns. Sixty-seven monitoring wells were installed under the supervision of an ERCE geologist from March 1989 to September 1990. Beginning in September 1990, Energy Systems supervised drilling activities for eight monitoring wells, the last of which was completed in December 1990. 9 refs., 3 figs., 2 tabs.

  20. Letter Report - Verification Survey of Final Grids at the David Witherspoon, Inc. 1630 Site Knoxville, Tennessee

    SciTech Connect (OSTI)

    P.C. Weaver

    2009-02-17T23:59:59.000Z

    Conduct verification surveys of grids at the DWI 1630 Site in Knoxville, Tennessee. The independent verification team (IVT) from ORISE, conducted verification activities in whole and partial grids, as completed by BJC. ORISE site activities included gamma surface scans and soil sampling within 33 grids; G11 through G14; H11 through H15; X14, X15, X19, and X21; J13 through J15 and J17 through J21; K7 through K9 and K13 through K15; L13 through L15; and M14 through M16

  1. Geophysical Surveys of a Known Karst Feature, Oak Ridge Y-12 Plant, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Carpenter, P.J.; Carr, B.J.; Doll, W.E.; Kaufmann, R.D.; Nyquist, J.E.

    1999-11-14T23:59:59.000Z

    Geophysical data were acquired at a site on the Oak Ridge Reservation, Tennessee to determine the characteristics of a mud-filled void and to evaluate the effectiveness of a suite of geophysical methods at the site. Methods that were used included microgravity, electrical resistivity, and seismic refraction. Both microgravity and resistivity were able to detect the void as well as overlying structural features. The seismic data provide bedrock depth control for the other two methods, and show other effects that are caused by the void.

  2. Fiscal year 1996 well installation program summary, Y-12 Plant Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    NONE

    1997-04-01T23:59:59.000Z

    This report summarizes the well installation activities conducted during the federal fiscal year (FY) 1996 drilling program at the Oak Ridge Y-12 Plant, Oak Ridge Tennessee. Synopses of monitoring well construction/well development data, well location rationale, geological/hydrological observations, quality assurance/quality control methods, and health and safety monitoring are included. Two groundwater monitoring wells were installed during the FY 1996 drilling program. One of the groundwater monitoring wells was installed in the Lake Reality area and was of polyvinyl chloride screened construction. The other well, installed near the Ash Disposal Basin, was of stainless steel construction.

  3. Lead test assembly irradiation and analysis Watts Bar Nuclear Plant, Tennessee and Hanford Site, Richland, Washington

    SciTech Connect (OSTI)

    NONE

    1997-07-01T23:59:59.000Z

    The U.S. Department of Energy (DOE) needs to confirm the viability of using a commercial light water reactor (CLWR) as a potential source for maintaining the nation`s supply of tritium. The Proposed Action discussed in this environmental assessment is a limited scale confirmatory test that would provide DOE with information needed to assess that option. This document contains the environmental assessment results for the Lead test assembly irradiation and analysis for the Watts Bar Nuclear Plant, Tennessee, and the Hanford Site in Richland, Washington.

  4. High efficiency InGaP solar cells for InGaP/GaAs tandem cell application

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Kurita, H.; Ohmori, M. [Japan Energy Corp., Toda, Saitama (Japan). Central Research Lab.

    1994-12-31T23:59:59.000Z

    In this paper, high conversion efficiency single junction InGaP solar cells with n-p-p{sup +} structure are presented and their application to InGaP/GaAs monolithic tandem cells is discussed. In the InGaP cells, a best conversion efficiency of 18.48% was achieved by introducing the p{sup +} peak back surface field (BSF) layer with a high carrier concentration of 2 {times} 10{sup 18} cm{sup {minus}3}, which improved both short circuit current (Isc) and open circuit voltage (Voc). However, in the case of InGaP/GaAs tandem cells, a decrease in carrier concentration of the InGaP BSF layer, which was caused by the diffusion of Zn, was found to reduce the Isc and Voc of the tandem cell. The reduction in the carrier concentration was suppressed by using a thicker BSF layer of 0.5 {micro}m, which reduced the current density in the GaAs bottom cell. An InGaP/GaAs tandem cell with 27.3% efficiency and a high Voc of 2.418 V was obtained.

  5. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation

    E-Print Network [OSTI]

    Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phaseAs was 70% of that on bulk InP at both temperatures. To achieve this, graded buffers in the InGaAs, InGaP

  6. AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates

    E-Print Network [OSTI]

    Manfra, Michael J.

    PS-4 AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates Nils ABSTRACT Molecular Beam Epitaxy of GaN and related alloys is becoming a rival to the more established, and HVPE SI-GaN templates on sapphire. While sapphire and SI-Sic are established substrates for the growth

  7. ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    MOSCAP process ?ow: n-GaN substrate; Ohmic metallization andtion for a AlGaN/ GaN HEMT on a substrate which has a poorsapphire substrate, a well-passivated AlGaN/ GaN HEMT grown

  8. Green light emission by InGaN/GaN multiple-quantum-well microdisks

    SciTech Connect (OSTI)

    Hsu, Yu-Chi; Lo, Ikai, E-mail: ikailo@mail.phys.nsysu.edu.tw; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Tsai, Cheng-Da; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)] [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China); Hsu, Gary Z. L. [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)] [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)

    2014-03-10T23:59:59.000Z

    The high-quality In{sub x}Ga{sub 1?x}N/GaN multiple quantum wells were grown on GaN microdisks with ?-LiAlO{sub 2} substrate by using low-temperature two-step technique of plasma-assisted molecular beam epitaxy. We demonstrated that the hexagonal GaN microdisk can be used as a strain-free substrate to grow the advanced In{sub x}Ga{sub 1?x}N/GaN quantum wells for the optoelectronic applications. We showed that the green light of 566-nm wavelength (2.192?eV) emitted from the In{sub x}Ga{sub 1?x}N/GaN quantum wells was tremendously enhanced in an order of amplitude higher than the UV light of 367-nm wavelength (3.383?eV) from GaN.

  9. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01T23:59:59.000Z

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  10. InGaP/GaAs and InGaAs mechanically-stacked triple-junction solar cells

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Agui, T. [Japan Energy Corp., Toda, Saitama (Japan)] [and others

    1997-12-31T23:59:59.000Z

    Triple-junction cells with AM1.5 efficiencies of over 33% have been demonstrated. A planar type InGaP/GaAs monolithic dual-junction cell was fabricated on a semi-insulating FaAs substrate, which has high infra-red transparency. Then a dual-junction cell, with efficiency of 27--28%, was mechanically stacked on an InGaAs cell fabricated on an InP substrate. The bottom InGaAs cell showed an efficiency of 6.2% under the InGaP/GaAs cell, and a total efficiency of 33--34% was achieved for the four-terminal triple-junction cell.

  11. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20T23:59:59.000Z

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  12. Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

    SciTech Connect (OSTI)

    Roul, Basanta; Kumar, Mahesh [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Rajpalke, Mohana K.; Bhat, Thirumaleshwara N.; Krupanidhi, S. B. [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Kalghatgi, A. T. [Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Kumar, Nitesh; Sundaresan, A. [Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bangalore 560064 (India)

    2011-10-17T23:59:59.000Z

    We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm{sup -1} in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy.

  13. ENGINEERS DAYENGINEERS DAYThis year the University of Tennessee College of Engineering is celebrating the 100th Anniversary of

    E-Print Network [OSTI]

    Tennessee, University of

    ENGINEERS DAYENGINEERS DAYThis year the University of Tennessee College of Engineering is celebrating the 100th Anniversary of Engineers Day. Each October, undergraduate engineering classes of potential engineering students from high schools across the region. Last year, close to 1,000 students from

  14. EIS-0071: Memphis Light, Gas and Water Division Industrial Fuels Gas Demonstration Plant, Memphis, Shelby County, Tennessee

    Broader source: Energy.gov [DOE]

    The U.S. Department of Energy developed this EIS to assesses the potential environmental impacts associated with the construction and operation of a 3,155-ton-per-day capacity facility, which will demonstrate the technical operability, economic viability, and environmental acceptability of the Memphis Division of Light, Gas and Water coal gasification plant at Memphis, Tennessee.

  15. Proposed Program: Voluntary Retirement Incentive Program for Staff Proposed by: University of Tennessee Institute of Agriculture (UTIA)

    E-Print Network [OSTI]

    Tennessee, University of

    : 1. Eligible for federal retirement benefits under a Voluntary Early Retirement Authority (VERA)2#12;#12;Proposed Program: Voluntary Retirement Incentive Program for Staff Proposed by: University of Tennessee Institute of Agriculture (UTIA) Purpose: The UTIA Voluntary Retirement Incentive Program for Staff

  16. UTNEUPDATEUTNEUPDATEA Publication from the Department of Nuclear Engineering at the University of Tennessee Dr. Jason P. Hayward

    E-Print Network [OSTI]

    Wang, Xiaorui "Ray"

    UTNEUPDATEUTNEUPDATEA Publication from the Department of Nuclear Engineering at the University of Tennessee Department of Nuclear EngineeringUTNEUPDATE Department Head's Message Dr. Wesley Hines New Faculty Outstanding MS Student: Cole Gentry NE Hosts Graduate Recruiting Weekend ANS Awards UT Nuclear Engineering

  17. Authorization of Disclosure I fully understand that, under the laws of the State of Tennessee, personnel records are considered public

    E-Print Network [OSTI]

    Dai, Pengcheng

    , personnel records are considered public records and may be inspected, extracted, or copied by any citizen of such records. THE FOLLOWING AUTHORIZATIONS ARE FOR RELEASE OF INFORMATION IN RESPONSE TO TELEPHONE INQUIRIES of Human Resources Management of the University of Tennessee to provide the following personnel information

  18. EA-1779: Proposed Changes to the Sanitary Biosolids Land Application Program on the Oak Ridge Reservation, Oak Ridge, Tennessee

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts of a proposal to amend (e.g., by changing setback requirements from surface water features and potential channels to groundwater) the Sanitary Biosolids Land Application Program at the Oak Ridge Reservation in Oak Ridge, Tennessee.

  19. Routine environmental audit of the Y-12 Plant, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    NONE

    1994-09-01T23:59:59.000Z

    This report documents the results of the routine environmental audit of the Oak Ridge Y-12 Plant (Y-12 Plant), Anderson County, Tennessee. During this audit, the activities conducted by the audit team included reviews of internal documents and reports from previous audits and assessments; interviews with U.S. Department of Energy (DOE), State of Tennessee regulatory, and contractor personnel; and inspections and observations of selected facilities and operations. The onsite portion of the audit was conducted August 22-September 2, 1994, by the DOE Office of Environmental Audit (EH-24), located within the Office of Environment, Safety and Health (EH). DOE 5482.1 B, {open_quotes}Environment, Safety, and Health Appraisal Program,{close_quotes} establishes the mission of EH-24 to provide comprehensive, independent oversight of DOE environmental programs on behalf of the Secretary of Energy. The ultimate goal of EH-24 is enhancement of environmental protection and minimization of risk to public health and the environment. EH-24 accomplishes its mission by conducting systematic and periodic evaluations of DOE`s environmental programs within line organizations, and by using supplemental activities that strengthen self-assessment and oversight functions within program, field, and contractor organizations. The audit evaluated the status of programs to ensure compliance with Federal, state, and local environmental laws and regulations; compliance with DOE Orders, guidance, and directives; and conformance with accepted industry practices and standards of performance. The audit also evaluated the status and adequacy of the management systems developed to address environmental requirements.

  20. Cost of electric-power interruptions to residences in the Tennessee Valley

    SciTech Connect (OSTI)

    Gilmer, R W; Mack, R S

    1982-03-01T23:59:59.000Z

    This report assesses the cost of electric power outages to residential customers of the Tennessee Valley Authority (TVA). The assessment focuses primarily on costs associated with rationing electric power by means of rotating blackouts of 1 to 3 h, exercised several times per year and perhaps as often as once each month. The cost of these blackouts is assessed in terms of several measures of lost consumer's surplus and lost production within the home. Estimates are developed by season for the typical home, for homes in different parts of the Tennessee Valley, and for homes with different mixes of appliances. Estimates for a typical home in the TVA region vary from 20 cents to 50 cents per kilowatthour depending upon the season and the method of measurement used. These valuations for the TVA region are compared to cost estimates for the US as a whole. The implications of outages lasting longer than 3 h are considered, and costs sustained in such outages are outlined.

  1. Wireless Roadside Inspection Phase II Tennessee Commercial Mobile Radio Services Pilot Test Final Report

    SciTech Connect (OSTI)

    Franzese, Oscar [ORNL; Lascurain, Mary Beth [ORNL; Capps, Gary J [ORNL; Siekmann, Adam [ORNL

    2011-05-01T23:59:59.000Z

    The Federal Motor Carrier Safety Administration (FMCSA) Wireless Roadside Inspection (WRI) Program is researching the feasibility and value of electronically assessing truck and bus driver and vehicle safety at least 25 times more often than is possible using only roadside physical inspections. The WRI program is evaluating the potential benefits to both the motor carrier industry and to government. These potential benefits include reduction in accidents, fatalities and injuries on our highways and keeping safe and legal drivers and vehicles moving on the highways. WRI Pilot tests were conducted to prototype, test and demonstrate the feasibility and benefits of electronically collecting safety data message sets from in-service commercial vehicles and performing wireless roadside inspections using three different communication methods. This report summarizes the design, conduct and results of the Tennessee CMRS WRI Pilot Test. The purpose of this Pilot test was to demonstrate the implementation of commercial mobile radio services to electronically request and collect safety data message sets from a limited number of commercial vehicles operating in Tennessee. The results of this test have been used in conjunction with the results of the complimentary pilot tests to support an overall assessment of the feasibility and benefits of WRI in enhancing motor carrier safety (reduction in accidents) due to increased compliance (change in motor carrier and driver behavior) caused by conducting frequent safety inspections electronically, at highway speeds, without delay or need to divert into a weigh station

  2. Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2007-02-01T23:59:59.000Z

    The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

  3. Anal Carcinoma: Impact of TN Category of Disease on Survival, Disease Relapse, and Colostomy Failure in US Gastrointestinal Intergroup RTOG 98-11 Phase 3 Trial

    SciTech Connect (OSTI)

    Gunderson, Leonard L., E-mail: gunderson.leonard@mayo.edu [Mayo Clinic Cancer Center, Scottsdale, Arizona (United States); Moughan, Jennifer [Radiation Therapy Oncology Group, Philadelphia, Pennsylvania (United States); Ajani, Jaffer A. [The University of Texas MD Anderson Cancer Center, Houston, Texas (United States); Pedersen, John E. [Cross Cancer Institute, Edmonton, Alberta (Canada); Winter, Kathryn A. [Radiation Therapy Oncology Group, Philadelphia, Pennsylvania (United States); Benson, Al B. [Northwestern University, Chicago, Illinois (United States); Thomas, Charles R. [Knight Cancer Institute/Oregon Health and Science University, Portland, Oregon (United States); Mayer, Robert J. [Dana-Farber Cancer Institute, Boston, Massachusetts (United States); Haddock, Michael G. [Mayo Clinic Cancer Center, Rochester, Minnesota (United States); Rich, Tyvin A. [University of Virginia, Charlottesville, Virginia (United States); Willett, Christopher G. [Duke University, Durham, North Carolina (United States)

    2013-11-15T23:59:59.000Z

    Purpose: The long-term update of US GI Intergroup RTOG 98-11 anal cancer trial found that concurrent chemoradiation (CCRT) with fluorouracil (5-FU) plus mitomycin had a significant impact on disease-free survival (DFS) and overall survival (OS) compared with induction plus concurrent 5-FU plus cisplatin. The intent of the current analysis was to determine the impact of tumor node (TN) category of disease on survival (DFS and OS), colostomy failure (CF), and relapse (local-regional failure [LRF] and distant metastases [DM]) in this patient group. Methods and Materials: DFS and OS were estimated univariately by using the Kaplan-Meier method, and 6 TN categories were compared by the log–rank test (T2N0, T3N0, T4N0, T2N1-3, T3N1-3, and T4N1-3). Time to relapse and colostomy were estimated by the cumulative incidence method, and TN categories were compared using Gray's test. Results: Of 682 patients, 620 were analyzable for outcomes by TN category. All endpoints showed statistically significant differences among the TN categories of disease (OS, P<.0001; DFS, P<.0001; LRF, P<.0001; DM, P=.0011; CF, P=.01). Patients with the poorest OS, DFS, and LRF outcomes were those with T3-4N-positive (+) disease. CF was lowest for T2N0 and T2N+ (11%, 11%, respectively) and worst for the T4N0, T3N+, and T4N+ categories (26%, 27%, 24%, respectively). Conclusions: TN category of disease has a statistically significant impact on OS, DFS, LRF, DM, and CF in patients treated with CCRT and provides excellent prognostic information for outcomes in patients with anal carcinoma. Significant challenges remain for patients with T4N0 and T3-4N+ categories of disease with regard to survival, relapse, and CF and lesser challenges for T2-3N0/T2N+ categories.

  4. September 16-21, 2007 Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN as etch-stop layer

    E-Print Network [OSTI]

    Pala, Nezih

    0 2 V(V) C(pF) Before etching (material) After etching (device) G AlGaN substrate i-GaN DS AlN AlGaN substrate AlN i-GaN AlGaN S G DAlGaNAlGaN InGaNInGaN Standard gate recess InGaN stop layer gate recess InGaNICNS 7 September 16-21, 2007 ­ Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN

  5. Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen

    E-Print Network [OSTI]

    York, Robert A.

    Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen Materials Department March 2005 Titanium dioxide TiO2, with the rutile structure was grown on 0001 oriented GaN and 0001 Al0.33Ga0.67N/GaN heterostructure field effect transistor HFET structures by molecular beam epitaxy. X

  6. Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells

    E-Print Network [OSTI]

    Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN based on radial p­i­n multi quantum well (QW) junctions have been realized from GaN wires grown by catalyst- free metal organic vapor phase epitaxy. The Inx Ga1Àx N/GaN undoped QW system is coated over both

  7. High density plasma damage in InGaP/GaAs as AlGaAs/GaAs high electron mobility transistors

    SciTech Connect (OSTI)

    Lee, J.W.; Pearton, S.J. [Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering; Ren, F.; Kopf, R.F.; Kuo, J.M. [Bell Labs., Murray Hill, NJ (United States). Lucent Technologies; Shul, R.J. [Sandia National Labs., Albuquerque, NM (United States); Constantine, C.; Johnson, D. [Plasma-Therm Inc., St. Petersburg, FL (United States)

    1998-11-01T23:59:59.000Z

    The introduction of plasma damage in InGaP/GaAs and AlGaAs/GaAs high electron mobility transistors (HEMTs) has been investigated using both inductively coupled plasma and electron cyclotron resonance Ar discharges. The saturated drain-source current is found to be decreased through introduction of compensating deep levels into the InGaP or AlGaAs donor layer. The degradation of device performance is a strong function of ion energy and ion flux, and an advantage of both high density plasma tools is that ion energy can be reduced by increasing the plasma density. Increasing process pressure and source power, and decreasing radio-frequency chuck power produce the lowest amounts of plasma damage in HEMTs.

  8. Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates

    E-Print Network [OSTI]

    Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates, around 104 cm-2 . The structures, grown on GaP or GaAs, consist of graded In-fraction InGaP and AlInGaP. High surface roughness and branch defects in Al InGaP lead to the lowest quality virtual substrates we

  9. Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method

    E-Print Network [OSTI]

    Okamoto, Koichi

    Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method; 78.55.Cr; 78.67.De; S7.14 Carrier dynamics in GaN and InGaN/GaN SQW structures were observed by using inhomogeneity of In composition. Recently, InGaN/GaN-based light emitting diodes (LEDs) have been commercialized

  10. N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

    E-Print Network [OSTI]

    Chung, Jinwook

    We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier ...

  11. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of InGaNGaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture Development and Industrialization of InGaNGaN LEDs on Patterned Sapphire...

  12. Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate

    E-Print Network [OSTI]

    Lu, Bin

    AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for power electronics applications. Despite the low cost of the Si substrate, the breakdown voltage (V[subscript ...

  13. COMPARISON OF RESULTS FOR QUARTER 4 SURFACE WATER SPLIT SAMPLES COLLECTED AT THE NUCLEAR FUELS SERVICES SITE, ERWIN, TN

    SciTech Connect (OSTI)

    none,

    2013-08-15T23:59:59.000Z

    Oak Ridge Associated Universities (ORAU), under the Oak Ridge Institute for Science and Education (ORISE) contract, collected split surface water samples with Nuclear Fuel Services (NFS) representatives on June 12, 2013. Representatives from the U.S. Nuclear Regulatory Commission (NRC) and the Tennessee Department of Environment and Conservation were also in attendance. Samples were collected at four surface water stations, as required in the approved Request for Technical Assistance number 11-018. These stations included Nolichucky River upstream (NRU), Nolichucky River downstream (NRD), Martin Creek upstream (MCU), and Martin Creek downstream (MCD). Both ORAU and NFS performed gross alpha and gross beta analyses, and Table 1 presents the comparison of results using the duplicate error ratio (DER), also known as the normalized absolute difference. A DER ≤ 3 indicates at a 99% confidence interval that split sample results do not differ significantly when compared to their respective one standard deviation (sigma) uncertainty (ANSI N42.22). The NFS split sample report specifies 95% confidence level of reported uncertainties (NFS 2013). Therefore, standard two sigma reporting values were divided by 1.96. In conclusion, most DER values were less than 3 and results are consistent with low (e.g., background) concentrations. The gross beta result for sample 5198W0014 was the exception. The ORAU gross beta result of 6.30 ? 0.65 pCi/L from location NRD is well above NFS?s non-detected result of 1.56 ? 0.59 pCi/L. NFS?s data package includes no detected result for any radionuclide at location NRD. At NRC?s request, ORAU performed gamma spectroscopic analysis of sample 5198W0014 to identify analytes contributing to the relatively elevated gross beta results. This analysis identified detected amounts of naturally-occurring constituents, most notably Ac-228 from the thorium decay series, and does not suggest the presence of site-related contamination.

  14. Siemens Pittsburgh, PA Novelis Corporation Atlanta, GA

    E-Print Network [OSTI]

    McGaughey, Alan

    Industrial Design ­ Shanghai, China Eaton Corporation ­ Pittsburgh, PA CMU, CTTEC ­ PittsburghSiemens ­ Pittsburgh, PA Novelis Corporation ­ Atlanta, GA Expense

  15. Strain-balanced InGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Van Den Broeck, D. M.; Hosalli, A. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-07-21T23:59:59.000Z

    InGaN/GaN multiple quantum well (MQW) structures suffer from a high amount of compressive strain in the InGaN wells and the accompanied piezoelectric field resulting in both a blue shift in emission and a reduction of emission intensity. We report the growth of In{sub x}Ga{sub 1?x}N/GaN “strain-balanced” multiple quantum wells (SBMQWs) grown on thick In{sub y}Ga{sub 1?y}N templates for x?>?y by metal organic chemical vapor deposition. SBMQWs consist of alternating layers of In{sub x}Ga{sub 1?x}N wells and GaN barriers under compressive and tensile stress, respectively, which have been lattice matched to a thick In{sub y}Ga{sub 1?y}N template. Growth of the In{sub y}Ga{sub 1?y}N template is also detailed in order to achieve thick, relaxed In{sub y}Ga{sub 1?y}N grown on GaN without the presence of V-grooves. When compared to conventional In{sub x}Ga{sub 1?x}N/GaN MQWs grown on GaN, the SBMQW structures exhibit longer wavelength emission and higher emission intensity for the same InN mole fraction due to a reduction in the well strain and piezoelectric field. By matching the average lattice constant of the MQW active region to the lattice constant of the In{sub y}Ga{sub 1?y}N template, essentially an infinite number of periods can be grown using the SBMQW growth method without relaxation-related effects. SBMQWs can be utilized to achieve longer wavelength emission in light emitting diodes without the use of excess indium and can be advantageous in addressing the “green gap.”.

  16. High current gain InGaN=GaN HBTs with C operating temperature

    E-Print Network [OSTI]

    Asbeck, Peter M.

    with an $20 nm low-temperature (Tg ¼ 550 C) GaN buffer layer on a (0001) sapphire substrate. The layer 1018 cmÀ3 Buffer GaN 2.5 mm ­ Substrate Sapphire ­ ­ HBT device processing began by depositing a 100 nmHigh current gain InGaN=GaN HBTs with 300 C operating temperature D.M. Keogh, P.M. Asbeck, T. Chung

  17. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  18. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  19. I tnR(I J UCI t~ G f~ SK, A S IMP LE nw~~ LED GEABLE SYSTE1'1 Bozena H. Thompson

    E-Print Network [OSTI]

    #12;I tnR(I J UCI t~ G f~ SK, A S IMP LE nw~~ LED GEABLE SYSTE1'1 Bozena H. Thompson Frederick B. Thompson 5054:H1:82 Submitted to Confo:'r,?nce on Appl i ed Natural Languago:' Processi ng Santa Monica. and F. Thompson INTRODUCING ASK, A SIMPLE KNOWLEDGEABLE SYSTEM Bozena H. Thompson Frederick B. Thompson

  20. Tiu Ch Chn La D n Khi Phc Sm Vo ngy 21 thng 4 nm 2011, cc y Vin nh Gi Tn Hi

    E-Print Network [OSTI]

    con ngi bng cách khôi phc, phc hi môi trng sng, thay th, hoc thu gom mt lng tng ng vi ngun tài nguyên thiên nhiên có cht lng, giá tr sinh thái hoc dân dng tng ng n bù các tài nguyên và dch v b tn hi t s c, nhng vn c chp nhn và hu ích giúp sàng lc mt s lng ln các d án có tim nng. Không mt yu t nào c s dng nh

  1. Interim Letter Report - Verification Survey of Partial Grids H19, J21, J22, X20, and X21 at the David Witherspoon, Inc. 1630 Site, Knoxville Tennessee

    SciTech Connect (OSTI)

    P.C. Weaver

    2008-03-19T23:59:59.000Z

    Conduct verification surveys of available grids at the David Witherspoon Incorporated 1630 Site (DWI 1630) in Knoxville, Tennessee. The IVT conducted verification activities of partial grids H19, J21, J22, X20, and X21.

  2. Inspection of Environment, Safety, and Health and Emergency Management at the Oak Ridge Operations Office and East Tennessee Technology Park, Summary Report, May 2003

    Broader source: Energy.gov [DOE]

    This report provides the results of an inspection of environment, safety, and health and emergency management programs at the U.S. Department of Energy's (DOE) East Tennessee Technology Park (ETTP).

  3. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01T23:59:59.000Z

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  4. Fine structure of Fe-Co-Ga and Fe-Cr-Ga alloys with low Ga content

    SciTech Connect (OSTI)

    Kleinerman, Nadezhda M., E-mail: kleinerman@imp.uran.ru; Serikov, Vadim V., E-mail: kleinerman@imp.uran.ru; Vershinin, Aleksandr V., E-mail: kleinerman@imp.uran.ru; Mushnikov, Nikolai V., E-mail: kleinerman@imp.uran.ru; Stashkova, Liudmila A., E-mail: kleinerman@imp.uran.ru [Institute of Metal Physics UB RAS, S. Kovalevskaya str. 18, 620990 Ekaterinburg (Russian Federation)

    2014-10-27T23:59:59.000Z

    Investigation of Ga influence on the structure of Fe-Cr and Fe-Co alloys was performed with the use of {sup 57}Fe Mössbauer spectroscopy and X-ray diffraction methods. In the alloys of the Fe-Cr system, doping with Ga handicaps the decomposition of solid solutions, observed in the binary alloys, and increases its stability. In the alloys with Co, Ga also favors the uniformity of solid solutions. The analysis of Mössbauer experiments gives some grounds to conclude that if, owing to liquation, clusterization, or initial stages of phase separation, there exist regions enriched in iron, some amount of Ga atoms prefer to enter the nearest surroundings of iron atoms, thus forming binary Fe-Ga regions (or phases)

  5. TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer

    SciTech Connect (OSTI)

    Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

    2008-01-01T23:59:59.000Z

    It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

  6. Excitonic properties of strained wurtzite and zinc-blende GaNAlxGa1xN quantum dots

    E-Print Network [OSTI]

    Fonoberov, Vladimir

    Excitonic properties of strained wurtzite and zinc-blende GaNÕAlxGa1ÀxN quantum dots Vladimir A 2003 We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite WZ of GaN QDs.1­8 Molecu- lar beam epitaxial growth in the Stranski­Krastanov mode of wurtzite WZ Ga

  7. Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices

    E-Print Network [OSTI]

    Feenstra, Randall

    Morphological and compositional variations in strain- compensated InGaAsP/InGaP superlattices R of Technology, Kista, Sweden Abstract We have investigated the properties of strain-compensated InGaAsP/In- GaP superlattices, grown by metalorganic vapor phase epitaxy, with and without InP interlayers inserted in the InGaP

  8. Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1

    E-Print Network [OSTI]

    Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1 , Kristian of GaAs based self-aligned lasers based upon a single overgrowth. A lattice matched n-doped InGaP layer were exposed to oxygen. True buried heterostructures devices utilising InGaP clad- ding layers have

  9. Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates

    E-Print Network [OSTI]

    Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates M. J of unconventional alloys of InGaP with In fraction of 0.2­0.4 grown on fully relaxed GaAsP virtual substrates demonstrate growth of extremely high quality InGaP heterostructures which hold promise for fabrication

  10. Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M Abstract Scanning tunneling microscopy and spectroscopy are used to study InGaP/GaAs heterojunctions computation of the tunnel current. Curve fitting of theory to experiment is performed. Using an InGaP band gap

  11. Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1

    E-Print Network [OSTI]

    Dietz, Nikolaus

    Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1 G. Ariyawansa,1 online 2 September 2009 A study of trap states in n+ -GaN/AlGaN heterostructures using electrical related absorption centers attributed to shallow Si-donor pinned to the AlGaN barrier , N-vacancy/ C

  12. High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop

    E-Print Network [OSTI]

    Itoh, Tatsuo

    High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop amplifier module using AlGaN/GaN high electron mobility transistor (HEMT) has been developed that covers radars and communications systems. GaN-based HEMT's for high power applications at microwave frequencies

  13. Fiscal Year 2010 Phased Construction Completion Report for EU Z2-32 in Zone 2, East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Bechtel Jacobs

    2010-02-01T23:59:59.000Z

    The Record of Decision for Soil, Buried Waste, and Subsurface Structure Actions in Zone 2, East Tennessee Technology Park, Oak Ridge, Tennessee (DOEIORJO 1-2161 &D2) (Zone 2 ROD) acknowledged that most of the 800 acres in Zone 2 were contaminated, but that sufficient data to confirm the levels of contamination were lacking. The Zone 2 ROD further specified that a sampling strategy for filling the data gaps would be developed. The Remedial Design Report/Remedial Action Work Plan for Zone 2 Soils, Slabs, and Subsurface Structures, East Tennessee Technology Park, Oak Ridge, Tennessee (DOEIORIO 1 -2224&D3) (RDRJRAWP) defined the sampling strategy as the Dynamic Verification Strategy (DVS), generally following the approach used for characterization of the Zone I exposure units (EUs). The Zone 2 ROD divided the Zone 2 area into seven geographic areas and 44 EUs. To facilitate the data quality objectives (DQOs) of the DVS process, the RDR/RAWP regrouped the 44 EUs into 12 DQO scoping EU groups. These groups facilitated the DQO process by placing similar facilities and their support facilities together, which allowed identification of data gaps. The EU groups were no longer pertinent after DQO planning was completed and characterization was conducted as areas became accessible. As the opportunity to complete characterization became available, the planned DVS program was completed for the EU addressed in this document (EU Z2-32). The purpose of this Phased Construction Completion Report (PCCR) is to address the following: (1) Document DVS characterization results for EU Z2-32. (2) Describe and document the risk evaluation and determine if the EU meets the Zone 2 ROD requirements for unrestricted industrial use to 10 ft bgs. (3) Identify additional areas not defined in the Zone 2 ROD that require remediation based on the DVS evaluation results. (4) Describe the remedial action performed in the K-1066-G Yard in EU Z2-32. Approximately 18.4 acres are included in the EU addressed in this PCCR. Based on results of the DVS evaluation, all 18.4 acres are recommended for unrestricted industrial use to 10 ft bgs. There are no Federal Facility Agreement Sites included in Appendix A of the Zone 2 ROD in EU Z2-32. The Zone 2 ROD requires land use controls to prevent disturbance of soils below 10 ft deep and to restrict future land use to industrial/commercial activities. In response to stakeholder comments, the U.S. Department of Energy agreed to re-evaluate the need for such land use restrictions. This document includes a screening evaluation to determine the likelihood of land use controls in EU Z2-32 being modified to: (1) eliminate the restriction on disturbance of soils below 10 ft bgs where data indicate the absence of residual contamination at any depth that would result in an unacceptable risk to the future industrial worker, and (2) permit alternative land uses that would be protective of future site occupants. Results of this screening evaluation indicate a high probability that restrictions on disturbing soil below 10 ft bgs could be safely eliminated for EU Z2-32. A qualitative screening evaluation considered the likelihood of unrestricted land use being protective of future site occupants. Based on this qualitative assessment, all 18.4 acres addressed in this PCCR were assigned a high probability for consideration of release for unrestricted land use. This document contains the main text (Sects. 1 through 13) and one appendix. The main text addresses the purpose for this PCCR as described above. Additional supporting detail (e.g., field work and data summaries, graphics) is provided in the EU Z2-32 technical memorandum (Appendix A). Historical and DVS analytical data used in this PCCR are provided on a compact disc accompanying this document and can be accessed through the Oak Ridge Environmental Information System.

  14. Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Uren, M. J.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Keller, S.; Kolluri, S.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of Santa Barbara California, Santa Barbara, California 93106 (United States)

    2014-08-11T23:59:59.000Z

    The existence of impact ionization as one of the open questions for GaN device reliability was studied in N-polar AlGaN/GaN high electron mobility transistors. Electroluminescence (EL) imaging and spectroscopy from underneath the device gate contact revealed the presence of hot electrons in excess of the GaN bandgap energy even at moderate on-state bias conditions, enabling impact ionization with hole currents up to several hundreds of pA/mm. The detection of high energy luminescence from hot electrons demonstrates that EL analysis is a highly sensitive tool to study degradation mechanisms in GaN devices.

  15. Michael J. Poston Atlanta, GA 30307

    E-Print Network [OSTI]

    Orlando, Thomas

    Page | 1 Michael J. Poston Atlanta, GA 30307 Michael.Poston@gatech.edu Cell: 770.561.4756 U.S. Citizen Education PhD Candidate in Chemistry Georgia Institute of Technology, Atlanta, GA August 2007 with Application to Lunar Observations," JGR ­ Planets, 118, 105, doi: 10.1002/jgre.20025. Poston, M. J

  16. Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor

    E-Print Network [OSTI]

    Peale, Robert E.

    of materials systems such as GaAs/AlGaAs,3 InGaP/InGaAs/GaAs,4 GaN/AlGaN,2,5 and Si Ref. 1 have been explored

  17. FUPWG Meeting Agenda - Atlanta, GA | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA Energy on My Mind FUPWG Atlanta, GA May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta,...

  18. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Fujioka, H., E-mail: hfujioka@iis.u-tokyo.ac.jp [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); CREST, Japan Science and Technology Corporation (JST), 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 (Japan)

    2014-05-05T23:59:59.000Z

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3?×?10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  19. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar bandgap range. Index Terms--Epitaxy, GaAsP, InGaP, metamorphic. I. INTRODUCTION TODAY'S highest efficiency

  20. Small Wind Electric Systems: A Guide Produced for the Tennessee Valley Authority (Revised) (Brochure)

    SciTech Connect (OSTI)

    Not Available

    2009-06-01T23:59:59.000Z

    Small Wind Electric Systems: A Guide Produced for the Tennessee Valley Authority provides consumers with information to help them determine whether a small wind electric system can provide all or a portion of the energy they need for their home or business based on their wind resource, energy needs, and their economics. Topics discussed in the guide include how to make a home more energy efficient, how to choose the correct turbine size, the parts of a wind electric system, how to determine whether enough wind resource exists, how to choose the best site for a turbine, how to connect a system to the utility grid, and whether it's possible to become independent of the utility grid using wind energy. In addition, the cover of the guide contains a regional wind resource map and a list of incentives and contacts for more information.

  1. Design demonstrations for category B tank systems at Oak Ridge National Laboratory, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Not Available

    1994-11-01T23:59:59.000Z

    This document presents design demonstrations conducted of liquid low-level waste (LLLW) storage tank systems located at the Oak Ridge National Laboratory (ORNL). Demonstration of the design of these tank systems has been stipulated by the Federal Facility Agreement (FFA) between the US Environmental Protection Agency (EPA)-Region IV; the Tennessee Department of Environment and Conservation (TDEC); and the DOE. The FFA establishes four categories of tanks. These are: Category A -- New or replacement tank systems with secondary containment; Category B -- Existing tank systems with secondary containment; Category C -- Existing tank systems without secondary containment; Category D -- Existing tank systems without secondary containment that are removed from service. This document provides a design demonstration of the secondary containment and ancillary equipment of 11 tank systems listed in the FFA as Category B. The design demonstration for each tank is presented.

  2. Annual Storm Water Report for the Y-12 National Security Complex, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Clean Water Compliance Section of the Environment Compliance Department

    2012-01-01T23:59:59.000Z

    The storm water pollution prevention program at the Y-12 National Security Complex (Y-12 Complex) intends to protect the quality of storm water runoff through: (1) reducing the exposure of metal accumulation areas to precipitation, (2) implementation of Best Management Practices, (3) sampling during rain events and subsequent analysis, and (4) routine surveillances. When prescribed, the analytical data is compared to a set of cut-off concentration values to determine how the Y-12 Complex relates to other metal fabrication industries in the state of Tennessee. The quality of the storm water exiting the Y-12 Complex via East Fork Poplar Creek indicated some improvement in 2011. This improvement is attributable to the completion of several construction, demolition and remediation projects which occurred in 2010 and 2011. Emphasis will continue to be placed on site inspections and the timely implementation of improved storm water control measures as deemed necessary.

  3. Annual Storm Water Report for the Y-12 National Security Complex Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Environment Compliance Department

    2012-01-01T23:59:59.000Z

    The storm water pollution prevention program at the Y-12 National Security Complex (Y-12 Complex) intends to protect the quality of storm water runoff through: (1) reducing the exposure of metal accumulation areas to precipitation, (2) implementation of Best Management Practices, (3) sampling during rain events and subsequent analysis, and (4) routine surveillances. When prescribed, the analytical data is compared to a set of cut-off concentration values to determine how the Y-12 Complex relates to other metal fabrication industries in the state of Tennessee. The quality of the storm water exiting the Y-12 Complex via East Fork Poplar Creek indicated some improvement in 2011. This improvement is attributable to the completion of several construction, demolition and remediation projects which occurred in 2010 and 2011. Emphasis will continue to be placed on site inspections and the timely implementation of improved storm water control measures as deemed necessary.

  4. RCRA Summary Document for the David Witherspoon 1630 Site, Knoxville, Tennessee

    SciTech Connect (OSTI)

    Pfeffer, J.

    2008-06-10T23:59:59.000Z

    The 48-acre David Witherspoon, Inc. (DWI) 1630 Site operated as an unregulated industrial landfill and scrap yard. The Tennessee Division of Superfund (TDSF) closed the landfill in 1974. During the period of operation, the site received solid and liquid wastes from salvage and industrial operations. The site consists of five separate tracts of land including a small portion located across the Norfolk Southern Railroad track. The landfill occupies approximately 5 acres of the site, and roughly 20 acres of the 48 acres contains surface and buried debris associated with the DWI dismantling business operation. Beginning in 1968, the state of Tennessee licensed DWI to receive scrap metal at the DWI 1630 Site, contaminated with natural uranium and enriched uranium (235U) not exceeding 0.1 percent by weight (TDSF 1990). The U.S. Department of Energy (DOE) has agreed to undertake remedial actions at the DWI 1630 Site as specified under a Consent Order with the Tennessee Department of Environment and Conservation (TDEC) (Consent Order No. 90-3443, April 4, 1991), and as further delineated by a Memorandum of Understanding (MOU) between DOE and the State of Tennessee (MOU Regarding Implementation of Consent Orders, October 6, 1994). The soil and debris removal at the DWI 1630 Site is being performed by Bechtel Jacobs Company LLC (BJC) on behalf of the DOE. Remediation consists of removing contaminated soil and debris from the DWI 1630 site except for the landfill area and repairing the landfill cap. The DWI 1630 remediation waste that is being disposed at the Environmental Management Waste Management Facility (EMWMF) as defined as waste lot (WL) 146.1 and consists primarily of soils and soil like material, incidental debris and secondary waste generated from the excavation of debris and soil from the DWI 1630 site. The WL 146.1 includes soil, soil like material (e.g., shredded or chipped vegetation, ash), discrete debris items (e.g., equipment, drums, large scrap metal, cylinders, and cable) and populations of debris type items (e.g., piles of bricks, small scrap metal, roofing material, scaffolding, and shelving) that are located throughout the DWI 1630 site. The project also generates an additional small volume of secondary waste [e.g., personal protective equipment (PPE), and miscellaneous construction waste] that is bagged and included in bulk soil shipments to the EMWMF. The Waste Acceptance Criteria (WAC) for the EMWMF does not allow for material that does not meet the Resource Conservation and Recovery Act (RCRA) Land Disposal Restrictions (LDRs). The waste being excavated in certain areas of the DWI 1630 site contained soil that did not meet RCRA LDR criteria; therefore this waste had to be segregated for treatment or alternate disposal offsite. This document identifies the approach taken by the DWI 1630 project to further characterize the areas identified during the Phase II Remedial Investigation (RI) as potentially containing RCRA-characteristic waste. This document also describes the methodology used to determine excavation limits for areas determined to be RCRA waste, post excavation sampling, and the treatment and disposal of this material.

  5. Defect structures in rapidly degraded InGaAsP/InGaP double-heterostructure lasers

    SciTech Connect (OSTI)

    Ueda, O.; Wakao, K.; Yamaguchi, A.; Isozumi, S.; Komiya, S.

    1985-03-01T23:59:59.000Z

    Rapidly degraded InGaAsP/InGaP double-heterostructure lasers grown on (001)-oriented GaAs substrates by liquid phase epitaxy have been investigated by photolumi

  6. Association Nashville, TN

    E-Print Network [OSTI]

    Berleant, Daniel

    .cfainstitute.org/files/2014/01/Digital-currency.png www.firstpost.com/wp-content/uploads/2013/04/Bitcoin_AP_NEW.jpg www

  7. Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well

    SciTech Connect (OSTI)

    Zvonkov, B. N.; Nekorkin, S. M.; Vikhrova, O. V.; Dikareva, N. V., E-mail: dikareva@nifti.unn.ru [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

    2013-09-15T23:59:59.000Z

    The specific features of the emission characteristics of GaAs-based heterostructures with a GaAs{sub 1-x}Sb{sub x}-In{sub y}Ga{sub 1-y}As bilayer quantum well are studied. The heterostructures are grown by metal-organic chemical vapor deposition (MOCVD). With an analysis of previously reported data on the MOCVD growth process taken into account, the temperature range (560-580 Degree-Sign C), the relation between the fluxes emitted by the sources of Group-V and -III elements ( Less-Than-Or-Equivalent-To 1), and the order of layer growth for the production of the active region of a GaAs/InGaP laser heterostructure are determined experimentally. The active region is a GaAs{sub 0.75}Sb{sub 0.25}-In{sub 0.2}Ga{sub 0.8}As bilayer quantum well. For the structure, a 1075-nm electroluminescence signal attributed to indirect transitions between the valence band of the GaAs{sub 0.75}Sb{sub 0.25} layer and the conduction band of the In{sub 0.2}Ga{sub 0.8}As layer is observed. An increase in the continuous-wave pump current yields a decrease in the 1075-nm emission intensity and initiates stable lasing at a wavelength of 1022 nm at a threshold current density of 1.4 kA cm{sup -2} at room temperature. Lasing occurs at transitions direct in coordinate space.

  8. AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh

    E-Print Network [OSTI]

    Itoh, Tatsuo

    AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh Department-mail: ykchung@ee.ucla.edu Abstract - This paper presents the first single-ended AlGaN/GaN heterojunction field, respectively. For the frequency doubler with 1mm gate periphery AlGaN/GaN HFET, conversion gain of 0.17 d

  9. Materials Science and Engineering B59 (1999) 319322 Microcalorimetric absorption spectroscopy in GaNAlGaN

    E-Print Network [OSTI]

    Nabben, Reinhard

    1999-01-01T23:59:59.000Z

    Microcalorimetric measurements of small absorption coefficients have been performed on thin GaN­AlGaN quantum wells in GaN­AlGaN quantum wells Axel Go¨ldner a, *, Axel Hoffmann a , Bernard Gil b , Pierre Lefebvre b at the energy of the GaN buffer and at the energy of the thick AlGaN barrier layers, we could also readily

  10. Al fraction induced effects on the capacitance characteristics -GaN/AlxGa1-xN IR detectors

    E-Print Network [OSTI]

    Dietz, Nikolaus

    substrate. As shown in Fig. 1(a), the device structures consist of a 0.2 m n+ -GaN top contact (emitter.1117/12.828156 Proc. of SPIE Vol. 7467 74670W-1 #12;(a) Sapphire Substrate n GaN Bottom Contact AlxGa1-xN Barrier n GaNAl fraction induced effects on the capacitance characteristics of n+ -GaN/AlxGa1-xN IR detectors

  11. Improvement of breakdown voltage in InGaP/InGaAs/GaAs heterostructure MESFETs for MMICs

    SciTech Connect (OSTI)

    Koh, Inoue; Yamane, Yasuro; Shiojima, Kenji [NTT LSI Lab., Kanagawa (Japan)] [and others

    1995-12-31T23:59:59.000Z

    This paper describes the trade-off between breakdown voltage and RF performance of InGaP/InGaAs/GaAs heterostructure MESFETs for power amplifiers and oscillators in multi-function MMICs in the millimeter-wave range. The authors successfully improved both gate-drain and drain-source breakdown voltages while maintaining excellent high-frequency performance by using a double-layered gate consisting of WSiN with different nitrogen contents, and by varying epitaxial layer thickness and implantation dose.

  12. Necessity of Ga prelayers in GaAs/Ge growth using gas-source molecular beam epitaxy

    E-Print Network [OSTI]

    in a highly defective GaAs layer.as5 Recently, InGaP light-emitting diodes have been fabricated on Si using

  13. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

    2011-01-07T23:59:59.000Z

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  14. High-efficiency radiation-resistant InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Takamoto, T. [Toyota Technological Inst., Tempaku, Nagoya (Japan); [Japan Energy Corp., Toda, Saitama (Japan); Yamaguchi, M.; Taylor, S.J. [Toyota Technological Inst., Tempaku, Nagoya (Japan); Ikeda, E.; Agui, T.; Kurita, H. [Japan Energy Corp., Toda, Saitama (Japan)

    1997-12-31T23:59:59.000Z

    A world-record efficiency of 26.9% (AM0, 28 C) has been obtained for InGaP/GaAs tandem solar cells fabricated by the MOCVD method. The radiation resistance of the InGaP/GaAs tandem solar cells has also been evaluated following 1 MeV electron irradiation. Degradation in the tandem cell performance has been confirmed to be mainly attributed to large degradation in the GaAs bottom cell, which features a highly doped base layer. Similar radiation-resistance with GaAs-on-Ge cells has been observed for the InGaP/GaAs tandem cell. However, some recovery of the tandem cell performance has been found due to minority-carrier injection under light illumination of forward bias, which causes defect annealing in InGaP cells. The optimal design of the InGaP base layer thickness for current matching at end of life (EOL) (after irradiation with 10{sup 15} electrons cm{sup {minus}2}) has been examined.

  15. EIS-0305: Treating Transuranic (TRU)/Alpha Low-Level at the Oak Ridge National Laboratory, Oak Ridge, Tennessee

    Broader source: Energy.gov [DOE]

    Treating Transuranic (TRU)/Alpha Low-Level Waste at the Oak Ridge National Laboratory, Oak Ridge, Tennessee)This EIS evaluates DOE's proposal to construct, operate, and decontaminate/decommission a Transuranic (TRU) Waste Treatment Facility in Oak Ridge, Tennessee. The four waste types that would be treated at the proposed facility would be remote-handled TRU mixed waste sludge, liquid low-level waste associated with the sludge, contact-handled TRU/alpha low-level waste solids, and remote-handled TRU/alpha low-level waste solids. The mixed waste sludge and some of the solid waste contain metals regulated under the Resource Conservation and Recovery Act and may be classified as mixed waste.

  16. Remedial investigation/feasibility study for the David Witherspoon, Inc., 901 Site, Knoxville, Tennessee: Volume 2, Appendixes

    SciTech Connect (OSTI)

    NONE

    1996-10-01T23:59:59.000Z

    This document contains the appendixes for the remedial investigation and feasibility study for the David Witherspoon, Inc., 901 site in Knoxville, Tennessee. The following topics are covered in the appendixes: (A) David Witherspoon, Inc., 901 Site Historical Data, (B) Fieldwork Plans for the David Witherspoon, Inc., 901 Site, (C) Risk Assessment, (D) Remediation Technology Discussion, (E) Engineering Support Documentation, (F) Applicable or Relevant and Appropriate Requirements, and (G) Cost Estimate Documentation.

  17. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

    2014-09-08T23:59:59.000Z

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  18. Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells

    E-Print Network [OSTI]

    Alpay, S. Pamir

    Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple InxGa1-xN(InGaN)/GaN multilayers on the In composition and misfit strain. The results indicate that for non-polar m-plane configurations with ½1210InGaN//½1210GaN and ½0001InGaN//½0001GaN epitaxial

  19. Data report: Illinois, Indiana, Kentucky, Tennessee, and Ohio. National Uranium Resource Evaluation Program. Hydrogeochemical and stream sediment reconnaissance

    SciTech Connect (OSTI)

    Sargent, K A; Cook, J R; Fay, W M

    1982-02-01T23:59:59.000Z

    This report presents the results of ground water, stream water, and stream sediment reconnaissance in Illinois, Indiana, Kentucky, Tennessee, and Ohio. The following sample types were collected in each state: Illinois - 716 stream sediment, 1046 ground water, 337 stream water; Indiana - 126 stream sediment, 443 ground water, 111 stream water; Kentucky - 4901 stream sediment, 6408 ground water, 3966 stream water; Tennessee - 3309 stream sediment, 3574 ground water, 1584 stream water; Ohio - 1214 stream sediment, 2049 ground water, 1205 stream water. Neutron activation analyses are given for U, Br, Cl, F, Mn, Na, Al, V, and Dy in ground water and stream water, and for U, Th, Hf, Ce, Fe, Mn, Na, Sc, Ti, V, Al, Dy, Eu, La, Sm, Yb, and Lu in sediments. Supplementary analyses by other techniques are reported for U (extractable), Ag, As, Ba, Be, Ca, Co, Cr, Cu, K, Li, Mg, Mo, Nb, Ni, P, Pb, Se, Sn, Sr, W, Y, and Zn. These analyses were made on 248 sediment samples from Tennessee. Field measurements and observations are reported for each site. Oak Ridge National Laboratory analyzed sediment samples which were not analyzed by Savannah River Laboratory neutron activation.

  20. Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2014-04-28T23:59:59.000Z

    Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

  1. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. [National Kaohsiung Normal University, Department of Electronic Engineering (China)], E-mail: jhtsai@nknucc.nknu.edu.tw; Chiu, S.-Y.; Lour, W.-S. [National Taiwan Ocean University, Department of Electrical Engineering (China); Guo, D.-F. [Air Force Academy, Department of Electronic Engineering (China)

    2009-07-15T23:59:59.000Z

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  2. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

    2014-04-24T23:59:59.000Z

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  3. Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Li, Z. L.; Wang, X. Q.; Huang, C. C.; Rong, X.; Xu, F. J.; Tang, N.; Qin, Z. X.; Shen, B. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)] [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Sang, L. W.; Sumiya, M. [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)] [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Chen, Y. H. [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China)] [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)] [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2013-05-13T23:59:59.000Z

    Intersubband transitions (ISBT) of AlGaN/GaN multiple quantum wells (MQWs) with wavelength towards atmospheric window (3-5 {mu}m) have been investigated. A Ga-excess epitaxial method is used in the molecular beam epitaxy leading to ultra-sharp interface and negligible elements inter-diffusion. The absorption peak wavelength of the ISBT was successfully tuned in the range of 3-4 {mu}m by modifying the GaN well thickness from 2.8 to 5.5 nm. It was further found that the polarization charge density of the AlGaN/GaN MQWs was about -0.034 C/m{sup 2} which gave rise to blueshift of the ISBT wavelength and thus partially compensated its redshift with increasing well thickness.

  4. InGaN/GaN single-quantum-well microdisks

    SciTech Connect (OSTI)

    Hsu, Yu-Chi; Lo, Ikai; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)

    2012-06-11T23:59:59.000Z

    We have grown In{sub x}Ga{sub 1-x}N/GaN quantum wells atop GaN microdisk with {gamma}-LiAlO{sub 2} substrate by using plasma-assisted molecular beam epitaxy. The structural and optical properties of the samples were analyzed by transmission electron microscopy, x-ray diffraction, cathodoluminescence, and photoluminescence measurements. Based on the measured results, we obtained the indium concentration of the In{sub x}Ga{sub 1-x}N/GaN single quantum well to be x = 0.25 with a band-gap energy of 2.31 eV, which is consistent with the bowing effect of bulk In{sub x}Ga{sub 1-x}N: E{sub g}(x) = [3.42 - x * 2.65 - x * (1 - x) * 2.4] eV.

  5. Atomic layer deposition of GaN using GaCl3 and NH3 Oh Hyun Kim, Dojun Kim, and Tim Andersona

    E-Print Network [OSTI]

    Anderson, Timothy J.

    be grown at lower temperature than by CVD. As example, ALD growth of device quality GaAs, GaP, and InGaP

  6. Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures

    SciTech Connect (OSTI)

    Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

    2014-01-13T23:59:59.000Z

    In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

  7. AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Anaya Calvo, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)] [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom); Stoffels, S.; Marcon, D. [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)] [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)

    2013-11-11T23:59:59.000Z

    AlGaN/GaN heterostructure field effect transistors with a 150?nm thick GaN channel within stacked Al{sub x}Ga{sub 1?x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60?W m{sup ?1} K{sup ?1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.

  8. InGaAsP/InGaP buried heterostructure lasers at 810 nm

    SciTech Connect (OSTI)

    Wakao, K.; Isozumi, S.; Nishi, H.; Ohsaka, S.

    1984-12-01T23:59:59.000Z

    InGaAsP/InGaP buried heterostructure lasers emitting at 810 nm have been grown on GaAs substrates using two-step liquid-phase epitaxy. A threshold current of 79 mA and an external differential quantum efficiency of 26% are obtained. Fundamental transverse mode operation up to 3 mW is achieved in the laser with the active region of 3.5 ..mu..m wide.

  9. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

    2014-04-24T23:59:59.000Z

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  10. Ohmic contacts to n-GaSb

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01T23:59:59.000Z

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  11. Sales and Use Tax Credit for Emerging Clean Energy Industry

    Broader source: Energy.gov [DOE]

    In June 2009, Tennessee enacted the [http://www.capitol.tn.gov/Bills/106/Chapter/PC0529.pdf Tennessee Clean Energy Future Act of 2009] and expanded its ''Sales and Use Tax Credit for Emerging...

  12. The structure of GaAs/Si(211) heteroepitaxial layers

    SciTech Connect (OSTI)

    Liliental-Weber, Z.; Weber, E.R.; Washburn, J.; Liu, T.Y.; Kroemer, H.

    1985-05-01T23:59:59.000Z

    Gallium arsenide films grown on (211)Si by molecular-beam epitaxy have been investigated using transmission electron microscopy. The main defects observed in the alloy were of misfit dislocations, stacking faults, and microtwin lamellas. Silicon surface preparation was found to play an important role on the density of defects formed at the Si/GaAs interface. Two different types of strained-layer superlattices, InGaAs/InGaP and InGaAs/GaAs, were applied either directly to the Si substrate, to a graded layer (GaP-InGaP), or to a GaAs buffer layer to stop the defect propagation into the GaAs films. Applying InGaAs/GaAs instead of InGaAs/InGaP was found to be more effective in blocking defect propagation. In all cases of strained-layer superlattices investigated, dislocation propagation was stopped primarily at the top interface between the superlattice package and GaAs. Graded layers and unstrained AlGaAs/GaAs superlattices did not significantly block dislocations propagating from the interface with Si. Growing of a 50 nm GaAs buffer layer at 505/sup 0/C followed by 10 strained-layer superlattices of InGaAs/GaAs (5 nm each) resulted in the lowest dislocation density in the GaAs layer (approx.5 x 10/sup 7//cm/sup 2/) among the structures investigated. This value is comparable to the recently reported density of dislocations in the GaAs layers grown on (100)Si substrates. Applying three sets of the same strained layers decreased the density of dislocations an additional approx.2 to 3 times.

  13. Over 30{percent} efficient InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Kurita, H. [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan); Ohmori, M. [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)] [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)

    1997-01-01T23:59:59.000Z

    A two-terminal monolithic InGaP/GaAs tandem solar cell with a new efficiency record of 30.28{percent} is realized with a practical large area of 4 cm{sup 2} under one-sun air-mass 1.5 global illumination. We report improvements of the tandem cell performance by introducing a double-hetero (hereafter DH) structure InGaP tunnel junction, in which the InGaP layers are surrounded by high band gap AlInP barriers. The DH structure by AlInP barriers increase the peak current of InGaP tunnel junction. The AlInP barrier directly below the InGaP top cell, which takes the part of a back surface field (hereafter BSF) layer, is found to be considerably effective in reflecting minority carriers in the top cell. The AlInP BSF layer does not only form a high potential barrier but also prevents the diffusion of zinc from a high doped tunnel junction toward the top cell during epitaxial growth. Furthermore, an InGaP tunnel junction reduces the absorption loss, which exists in a GaAs tunnel junction, and increases the photogenerated current in the GaAs bottom cell. {copyright} {ital 1997 American Institute of Physics.}

  14. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23T23:59:59.000Z

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  15. Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Pomeroy, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)

    2014-02-14T23:59:59.000Z

    We demonstrate the ability of confocal Raman thermography using a spatial filter and azimuthal polarization to probe vertical temperature gradients within the GaN buffer layer of operating AlGaN/GaN high electron mobility transistors. Temperature gradients in the GaN layer are measured by using offset focal planes to minimize the contribution from different regions of the GaN buffer. The measured temperature gradient is in good agreement with a thermal simulation treating the GaN thermal conductivity as homogeneous throughout the layer and including a low thermal conductivity nucleation layer to model the heat flow between the buffer and substrate.

  16. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    with the active thermoelectric cooling implemented on the same material system can improve the device performance, for the pro- posed cooling system should also be based on GaN. To real- ize this, the high-efficiency Ga,6 Great progress has been achieved in GaN-based microwave technology. GaN transistors with very high

  17. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2007-01-01T23:59:59.000Z

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  18. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

    E-Print Network [OSTI]

    The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs 1. Introduction, performance of these devices has been limited by self-heating [1] [6]. Thus, accurate modeling of heat diffusion and self-heating effects in AlGaN/GaN heterostructures and device optimization based

  19. InAsGaPInGaP high-temperature power Schottky rectifier and J. M. Woodall

    E-Print Network [OSTI]

    Woodall, Jerry M.

    °C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion is thought to be due to strong covalent bonding at the InAs/GaP interface. The InAs/GaP heterointerface effectively blocks impurity diffusion. Since InGaP is superior to GaP for high-power applica- tions, as shown

  20. GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

    E-Print Network [OSTI]

    GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer K.M. Groom, B fabrication, is demonstrated. An n-doped InGaP layer is utilised for both electrical and optical confinement-doped InGaP current blocking layer that also provides optical confinement. This tech- nology relies

  1. GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization

    E-Print Network [OSTI]

    Wetzel, Christian M.

    GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical 12180-3590, U.S.A. ABSTRACT The wide bandgap polar semiconductors GaN and ZnO and their related alloys fields, and surface terminations. With a small lattice mismatch of ~1.8 % between GaN and Zn

  2. Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates

    E-Print Network [OSTI]

    Nabben, Reinhard

    Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates: time-resolved photoluminescence, quantum dots, InGaN, Si substrate There exists a strong continuous expensive and are limited in size. Thus, heteroepitaxial growth of GaN on silicon substrates seems

  3. Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    -emitting diodes LEDs on low-defect density bulk GaN substrate, but not in green LEDs on sapphire substrate an ideal substrate for homoepitaxial growth. Here we study the microstructural properties of green GaInN/GaN-Koehler force10 resulting from a macroscopic relaxation of strain. II. CRYSTAL GROWTH c plane bulk GaN substrate

  4. Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    quantum well (QW) light-emitting diodes (LEDs) grown on sapphire and bulk GaN substrate by micro efficiency in dies grown on GaN substrates with a thermal resistance of 75 K/W. For dies on sapphire of GaN-based blue and green LEDs grown on sapphire and GaN substrates using micro-Raman spectroscopy

  5. Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy

    E-Print Network [OSTI]

    Nabben, Reinhard

    . The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate-grown heterostructures can drastically be reduced by using a template of MOVPE-GaN on the sapphire substrate, which leadsCorrelation between structural properties and optical amplification in InGaN/GaN heterostructures

  6. GAINING CONSENSUS: THE STORY OF ''OAK RIDGE TENNESSEE - A CITIZEN'S GUIDE TO THE ENVIRONMENT''

    SciTech Connect (OSTI)

    Craig, Robert; Freeman, Jenny; Gawarecki, Susan L; Hardy, Parker; Kopp, Steve; Mulvenon, Norman A; Pardue, William; Sarno, Doug

    2003-02-27T23:59:59.000Z

    In 2001, a diverse group of citizens ranging from conservationists to industrial developers joined forces to produce a factual description of Oak Ridge's environment and the issues associated with contamination on the U.S. Department of Energy (DOE) reservation. This consensus effort was a result of common values not generally seen in this spectrum of philosophies, and of shared concerns about rising property taxes, declining city services, fleeing retail establishments, and diminishing real estate values. These problems are attributed to waning local DOE budgets coupled with Oak Ridge's national reputation of being contaminated and unsafe. This undeserved reputation harms the city's ability to attract new industry to replace declining federal employment and to induce families to live in the community. Representatives from a spectrum of conservation, environmental, economic development, local government, and civic organizations were invited to meet regarding how to best explain the complex environmental story of Oak Ridge and the DOE reservation. This large group decided to publish a straightforward explanation of the environmental quality of the city and its relationship to the DOE reservation in easy-to-understand language. The result was Oak Ridge, Tennessee--A Citizen's Guide to the Environment, a 28-page glossy booklet, distributed through the Chamber of Commerce and other organizations. The Oak Ridger ensured wide distribution in the community by publishing it as an insert in the daily paper. The material is also available on several web sites. A trifold brochure summarizing and promoting the larger document was also produced for wider distribution. The integrity of the Citizen's Guide was ensured by having a six-member editorial team manage writing and review of the document. There was no direct involvement by the DOE and its contractor. Knowledgeable citizen writers from throughout the community contributed technical and descriptive text. A professional technical editor melded the disparate styles into a cohesive publication. Volunteers from about 100 organizations reviewed the draft for accuracy of content and readability. Participating organizations, upon review of the final draft, then decided whether their names would be listed in the document as contributors and supporters. While the writing and editing was primarily accomplished by conservation and civic organizations, funding to print the final publications came largely from economic development interests and their supporters. The positive reception from the public upon release of Oak Ridge, Tennessee--A Citizen's Guide to the Environment stands as testament to the ability of diverse interest groups to come to consensus and communicate the environmental value of their community.

  7. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04T23:59:59.000Z

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  8. Metastable states in InGaN/GaN MQW structures doped with Sm, Eu, and Eu + Sm

    SciTech Connect (OSTI)

    Mezdrogina, M. M., E-mail: Margaret.M@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Kozhanova, Yu. V. [St. Petersburg State Polytechnical University (Russian Federation)

    2013-04-15T23:59:59.000Z

    Measurements of the microphotoluminescence (microPL) spectra of InGaN/GaN:Sm and InGaN/GaN:Eu quantum well (QW) structures show that the action of a magnetic field gives rise to Van Vleck paramagnetism for Eu{sup 3+} and Sm{sup 3+}. The macrophotoluminescence (macroPL) spectra recorded after measuring the microPL spectra of InGaN/GaN QW structures doped with Sm or Eu + Sm at a high excitation level (>10{sup 23} photons cm{sup -2} s{sup -1}) in magnetic fields contain no QW emission lines which are present in the macroPL spectra recorded before these microPL measurements. This is indicative of the presence of photoinduced defects. Annealing of the InGaN/GaN:Sm and InGaN/GaN:(Eu + Sm) structures reduces the concentration of photoinduced defects.

  9. Environmental Baseline Survey Report for the Title Transfer of Land Parcel ED-4 at the East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    SAIC

    2008-05-01T23:59:59.000Z

    This environmental baseline survey (EBS) report documents the baseline environmental conditions of a land parcel referred to as 'ED-4' (ED-4) at the U. S. Department of Energy's (DOE's) East Tennessee Technology Park (ETTP). DOE is proposing to transfer the title of this land to the Heritage Center, LLC. Parcel ED-4 is a land parcel that consists of two noncontiguous areas comprising a total of approximately 18 acres located east of the ETTP. The western tract of ED-4 encompasses approximately 8.5 acres in the northeastern quadrant of the intersection of Boulevard Road and Highway 58. The eastern tract encompasses an area of approximately 9.5 acres in the northwestern quadrant of the intersection of Blair Road and Highway 58 (the Oak Ridge Turnpike). Aerial photographs and site maps from throughout the history of the ETTP, going back to its initial development in the 1940s as the Oak Ridge Gaseous Diffusion Plant (ORGDP), indicate that this area has been undeveloped woodland with the exception of three support facilities for workers constructing the ORGDP since federal acquisition in 1943. These three support facilities, which were located in the western tract of ED-4, included a recreation hall, the Town Hall Camp Operations Building, and the Property Warehouse. A railroad spur also formerly occupied a portion of Parcel ED-4. These former facilities only occupied approximately 5 percent of the total area of Parcel ED-4. This report provides supporting information for the transfer of this government-owned property at ETTP to a non-federal entity. This EBS is based upon the requirements of Sect. 120(h) of the Comprehensive Environmental Response, Compensation, and Liability Act of 1980 (CERCLA). In order to support a Clean Parcel Determination (CPD) in accordance with CERCLA Sect. 120(h)(4)(d), groundwater and sediment samples were collected within, and adjacent to, the Parcel ED-4 study area. The potential for DOE to make a CPD for ED-4 is further supported by a No Further Investigation (NFI) determination made on land that adjoins ED-4 to the east (DOE 1997a) and to the south (DOE 1997b).

  10. Gas-source molecular beam epitaxial growth and characterization of the (Al,In,Ga)NP/GaP material system and Its applications to light-emitting diodes

    E-Print Network [OSTI]

    Odnoblyudov, Vladimir

    2006-01-01T23:59:59.000Z

    on metamorphic growth of InGaP layers on GaP substrates, astemperature amber photoluminescence from InGaP QWs, grownon a metamorphic InGaP layer. References: Fred Shubert E. ,

  11. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06T23:59:59.000Z

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  12. ANL2014-JMA.ppt

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Tennessee, Knoxville, TN 37996 4 Department of Physics, Australian National University, Canberra ACT 0200, Australia 5 Instituto de Ciencias Nucleares, UNAM, AP 70-543, 04510...

  13. accelerating technology transfer: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Effect of Accelerated Ash Loading Youngquist and Ke Nguyen University of Tennessee Knoxville, TN 37996 An accelerated ash loading protocol using a single-cylinder diesel engine...

  14. ccsd-00000821(version1):6Nov2003 Alloy effects in Ga1-xInxN/GaN heterostructures

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    ccsd-00000821(version1):6Nov2003 Alloy effects in Ga1-xInxN/GaN heterostructures Duc-Phuong Nguyen, France We show that the large band offsets between GaN and InN and the heavy carrier effec- tive masses preclude the use of the Virtual Crystal Approximation to describe the electronic structure of Ga1-xInxN/GaN

  15. DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS

    E-Print Network [OSTI]

    Honsberg, Christiana

    DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS Omkar Jani1 with a band gap of 2.4 eV or greater. InxGa1-xN is one of a few alloys that can meet this key requirement. InGaN.4 eV. InGaN has the appropriate optical properties and has been well demonstrated for light

  16. AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD

    E-Print Network [OSTI]

    Boyer, Edmond

    AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD R. Meunier1 , A, 38054 Grenoble Cedex 9, France 2 LAAS-CNRS, 7 Avenue du Colonel Roche, 31400 Toulouse, France AlGaN /GaN behavior. Those trapped charges can be associated to the carbon contamination of the AlGaN surface

  17. Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

    E-Print Network [OSTI]

    Bowers, John

    Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth S for publication 5 January 1999 The emission mechanisms of bulk GaN and InGaN quantum wells QWs were studied suggest that TDs simply reduce the net volume of light-emitting area. This effect is less pronounced in InGaN

  18. Comparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities

    E-Print Network [OSTI]

    Boyer, Edmond

    , transmission and absorption spectra of bulk GaAs, GaN and ZnO microcavities, in order to compareComparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities SAs and GaN microcavities. PACS numbers: 78.67.-n, 71.36.+c, 78.20.Ci, 78.55.Cr, 78.55.Et Keywords: polariton

  19. Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells

    E-Print Network [OSTI]

    As, Donat Josef

    molecular beam epitaxy on free standing 3C-SiC 001 substrates. During growth of Al0.15Ga0.85N/GaN quantum growth of the quantum structures an 800 nm thick GaN buffer layer was deposited on the 3C-SiC substrate. The buffer and the c-AlGaN/GaN quantum wells were grown at a substrate temperature of 720 °C. The layers were

  20. Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template

    SciTech Connect (OSTI)

    Wang, Y.D.; Zang, K.Y.; Chua, S.J.; Tripathy, S.; Chen, P.; Fonstad, C.G. [Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2005-12-19T23:59:59.000Z

    We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110 nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

  1. AlGaN/GaN HEMT With 300-GHz fmax

    E-Print Network [OSTI]

    Chung, Jinwook W.

    We report on a gate-recessed AlGaN/GaN high-electron mobility transistor (HEMT) on a SiC substrate with a record power-gain cutoff frequency (f[subscript max]). To achieve this high f[subscript max], we combined a low-damage ...

  2. Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

    E-Print Network [OSTI]

    Piner, Edwin L.

    This letter describes a gate-first AlGaN/GaN high-electron mobility transistor (HEMT) with a W/high-k dielectric gate stack. In this new fabrication technology, the gate stack is deposited before the ohmic contacts, and ...

  3. High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

    E-Print Network [OSTI]

    Hartono, Haryono

    The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. ...

  4. Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors

    E-Print Network [OSTI]

    Lu, Bin

    In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain ...

  5. Investigation of Strain in AlGaN/GaN Multi Quantum Wells by Complementary Techniques

    SciTech Connect (OSTI)

    Devaraju, G.; Sathish, N.; Pathak, A. P. [School of Physics, University of Hyderabad, Central University (P.0), Hyderabad 500 046 (India); Dhamodaran, S. [Department of Physics, Indian Institute of Technology, IIT P O, Kanpur UP 208016 (India); Gaca, J.; Wojcik, M. [Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland); Turos, A. [Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland); Soltan Institute for Nuclear Studies, Swierk/Otwock, Warsaw (Poland); Arora, B. M. [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai-400 005 (India)

    2009-03-10T23:59:59.000Z

    Al{sub 0.49}Ga{sub 0.51}N(12 nm)/GaN (13 nm) Multi Quantum Wells of 15 periods are grown on sapphire by MOCVD technique. GaN/AlN, each of thickness 200 nm and 20 nm respectively, are used as buffer layers between substrate and epilayer to incorporate the strain in epilayers. It is a well established technique to engineer the band gap in Al{sub x}Ga{sub 1-x}N by adjusting alloy composition. These samples are used in visible and UV light emitters. In the present study, we employ a photoluminescence technique to estimate the composition and luminescence peak positions of AlGaN and GaN. Crystallinity and quality of interfaces have been studied by Rocking curve scan. The Threading Dislocations formed at the GaN buffer layer travel across the entire layers to the surface to form good quality films. Photo-luminescence results show a very sharp GaN peak at 3.4 eV, as observed and reported by others, which shows that samples are free from point defects.

  6. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21T23:59:59.000Z

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(×2.1±1) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  7. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

    1997-05-01T23:59:59.000Z

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  8. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02T23:59:59.000Z

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  9. Fiscal year 1995 well installation program summary Y-12 Plant, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    NONE

    1995-09-01T23:59:59.000Z

    This report summarizes the well installation activities conducted during the federal fiscal year (FY) 1995 drilling program at the Oak Ridge Y-12 Plant, Oak Ridge, Tennessee (including activities that were performed in late FY 1994, but not included in the FY 1994 Well Installation Program Summary Report). Synopses of monitoring well construction/well development data, well location rationale, geological/hydrological observations, quality assurance/quality control methods, and health and safety monitoring are included. Three groundwater monitoring wells and two gas monitoring probes were installed during the FY 1995 drilling program. One of the groundwater monitoring wells was installed at Landfill VI, the other two in the Boneyard/Burnyard area. All of the groundwater monitoring wells were constructed with stainless steel screens and casings. The two gas monitoring probes were installed at the Centralized Sanitary Landfill II and were of polyvinyl chloride (PVC) screened construction. Eleven well rehabilitation/redevelopment efforts were undertaken during FY 1995 at the Y-12 Plant. All new monitoring wells and wells targeted for redevelopment were developed by either a 2.0-in. diameter swab rig or by hand bailing until nonspecific parameters (pH and specific conductance) attained steady-state levels. Turbidity levels were lowered, if required, to the extent practicable by continued development beyond a steady-state level of pH and conductance.

  10. AESOP XX: summary of proceedings. [Gatlinburg, Tennessee, April 24 to 26, 1979

    SciTech Connect (OSTI)

    none,

    1980-03-01T23:59:59.000Z

    The 20th meeting of the Association for Energy Systems, Operations, and Programming (AESOP) was held in Gatlinburg, Tennessee, on April 24 to 26, 1979. Representatives of DOE Headquarters discussed the effects that new security and privacy regulations will have on automatic data processing operations. The status and future possibilities of the Business Management Information System (BMIS) were also discussed. Then representatives of various DOE offices and contractors presented reports on various topics. This report contains two-page summaries of the papers presented at the meeting. Session topics and titles of papers were as follows: Washington report (New ADP issues; BMIS: the Business Management Information System; Nuclear weapons and the computer); Improving the productivity of the computing analyst/programer (What productivity improvement tools are available; Rocky Flats experience with SDM/70; Albuquerque Operations Office experience with SDM/70; Planning and project management; Minicomputer standards and programer productivity; MRC productivity gains through applications development tools); User viewpoints and expectations of data processing (User perspectives on computer applications; User viewpoints on environmental studies; Planning and implementing a procurement system; Two sides of the DP coin); Data base management (Use of data base systems within DOE; Future trends in data base hardware; Future trends in data base software; Toward automating the data base design process); and Management discussions. Complete versions of three of the papers have already been cited in ERA. These can be located by reference to the entry CONF-790431-- in the Report Number Index. (RWR)

  11. Routine environmental audit of the K-25 Site, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Not Available

    1994-02-01T23:59:59.000Z

    This report documents the results of the Routine Environmental Audit of the K-25 Site in Oak Ridge, Tennessee, conducted February 14 through February 25, 1994, by the US Department of Energy`s (DOE`s) Office of Environmental Audit (EH-24) located within the Office of Environment, Safety and Health (EH). The Routine Environmental Audit for the K-25 site was conducted as an environmental management assessment, supported through reviews of the Waste Management Program and the Decontamination and Decommissioning Program. The assessment was conducted jointly with, and built upon, the results provided by the ``DOE Oak Ridge Operations Office Environment, Safety, health and Quality Assurance Appraisal at the K-25 Site.`` DOE 5482.1B, ``Environment, Safety and Health Appraisal Program,`` established the mission of EH-24 to provide comprehensive, independent oversight of Department-wide environmental programs on behalf of the Secretary of Energy. The purpose of this assessment is to provide the Secretary of Energy and senior DOE managers with concise independent information as part of DOE`s continuing effort to improve environmental program performance. The ultimate goal of EH-24 is enhancement of environmental protection and the minimization of risk to public health and the environment. The routine environmental audit is one method by which EH-24 accomplishes its mission, utilizing systematic and periodic evaluations of the Department`s environmental programs within line organizations.

  12. Persistence of Hydrologic Variables and Reactive Stream Solute Concentrations in an East Tennessee Watershed

    SciTech Connect (OSTI)

    Koirala, Shesh R [ORNL; Gentry, Randall W [ORNL; Mulholland, Patrick J [ORNL; Perfect, Edmund [ORNL; Schwartz, John S [ORNL; Sayler, Gary Steven [ORNL

    2011-01-01T23:59:59.000Z

    Time and frequency domain analyses were conducted on weekly time series of water chemistry (nitrate, sulfate and calcium concentrations) collected from November 1995 to December 2005 at the West Fork of Walker Branch in Oak Ridge, Tennessee to evaluate the extent of their persistence and the relationship of this persistence to discharge and rainfall. In this study, spectral and wavelet analyses provided a theoretical basis for insights into long-term water chemistry behavior. All water chemistry parameters showed some level of persistence that was influenced by rainfall and/or discharge. Short-term persistence (less than a year) was related to the persistence of rainfall and discharge, whereas long-term persistence (more than a year) was related to the persistence of discharge. The Walker Branch conceptual hydrology model is augmented by these results that relate characteristic periodicities with flowpaths through different zones: the vadose zone (< 20 week period), saturated zone (20-50 week period) and bedrock zone (> 50 week period) with implications for reactive chemistries within the watershed. (C) 2011 Elsevier B.V. All rights reserved.

  13. Underground storage tank management plan, Oak Ridge Y-12 Plant, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    NONE

    1997-09-01T23:59:59.000Z

    The Underground Storage Tank (UST) Program at the Oak Ridge Y-12 Plant was established to locate UST systems at the facility and to ensure that all operating UST systems are free of leaks. UST systems have been removed or upgraded in accordance with Tennessee Department of Environment and Conservation (TDEC) regulations and guidance. With the closure of a significant portion of the USTs, the continuing mission of the UST Management Program is to manage the remaining active UST systems and continue corrective actions in a safe regulatory compliant manner. This Program outlines the compliance issues that must be addressed, reviews the current UST inventory and compliance approach, and presents the status and planned activities associated with each UST system. The UST Program provides guidance for implementing TDEC regulations and guidelines for petroleum UST systems. The plan is divided into three major sections: (1) regulatory requirements, (2) active UST sites, and (3) out-of-service UST sites. These sections describe in detail the applicable regulatory drivers, the UST sites addressed under the Program, and the procedures and guidance for compliance.

  14. Down on the farm. An analysis of energy inputs in Tennessee Valley farms

    SciTech Connect (OSTI)

    Camp, W.A.

    1985-01-01T23:59:59.000Z

    There are 150,159 farms in the 170 power counties of TVA; the largest percentage are in the Central District (26.4%). The majority of the farm operators reside on the farm they operate (101,592 operators or 67.7%). Individual or family-owned farms represent the largest type of farm organization (134,111 farms or 89.3%). Over 71,000 farms use electricity in actual farm production; farm expenses for electricity totaled $37,040,000 in 1982. Approximately 18% of the energy requirements in the American food system is used for actual farm production, while 82% goes for processing, marketing, transporting, and preparing food for consumption. Field crop production in the Tennessee Valley expends the majority of the gasoline (91.4%) and diesel (85.8%) inputs in the farm system. Livestock production consumes the majority of the electricity (89.9%), L.P. gas (70.0%), fuel oil (97.2%), and liquid fuel (99.3%). Dairy cow production is the most energy-intensive production in livestock. It consumes 63.4% of the gasoline, 78.6% of the diesel, 40.5% of the L.P. gas, and 64.5% of the electricity inputs in livestock.

  15. Community Energy Systems and the Law of Public Utilities. Volume Forty-four. Tennessee

    SciTech Connect (OSTI)

    Feurer, D.A.; Weaver, C.L.

    1981-01-01T23:59:59.000Z

    A detailed description is presented of the laws and programs of the State of Tennessee governing the regulation of public energy utilities, the siting of energy generating and transmission facilities, the municipal franchising of public energy utilities, and the prescription of rates to be charged by utilities including attendant problems of cost allocations, rate base and operating expense determinations, and rate of return allowances. These laws and programs are analyzed to identify impediments which they may present to the implementation of Integrated Community Energy Systems (ICES). This report is one of fifty-one separate volumes which describe such regulatory programs at the Federal level and in each state as background to the report entitled Community Energy Systems and the Law of Public Utilities - Volume One: An Overview. This report also contains a summary of a strategy described in Volume One - An Overview for overcoming these impediments by working within the existing regulatory framework and by making changes in the regulatory programs to enhance the likelihood of ICES implementation.

  16. Natural and Accelerated Bioremediation Research (NABIR) Field Research Center (FRC), Oak Ridge Tennessee

    SciTech Connect (OSTI)

    Watson, David; Jardine, Philip; Gu, Baohua; Parker, Jack; Brandt, Craig; Holladay, Susan; Wolfe, Amy; Bogle, Mary Anna; Lowe, Kenneth; Hyder, Kirk

    2006-06-01T23:59:59.000Z

    The Field Research Center (FRC) in Oak Ridge (Fig. 1), Tennessee supports the U.S. Department of Energy's (DOE's) Environmental Remediation Sciences Program (ERSP) goal of understanding the complex physical, chemical, and biological properties of contaminated sites for new solutions to environmental remediation and long-term stewardship. In particular, the FRC provides the opportunity for researchers to conduct studies that promote the understanding of the processes that influence the transport and fate of subsurface contaminants, the effectiveness and long-term consequences of existing remediation options, and the development of improved remediation strategies. It offers a series of contaminated sites around the former S-3 Waste Disposal Ponds and uncontaminated sites in which investigators and students conduct field research or collect samples for laboratory analysis. FRC research also spurs the development of new and improved characterization and monitoring tools. Site specific knowledge gained from research conducted at the FRC also provides the DOE-Oak Ridge Office of Environmental Management (EM) the critical scientific knowledge needed to make cleanup decisions for the S-3 Ponds and other sites on the Oak Ridge Reservation (ORR).

  17. Report of the Advanced Neutron Source (ANS) safety workshop, Knoxville, Tennessee, October 25--26, 1988

    SciTech Connect (OSTI)

    Buchanan, J.R.; Dumont, J.N.; Kendrick, C.M.; Row, T.H.; Thompson, P.B.; West, C.D.; Marchaterre, J.F.; Muhlheim, M.D.; McBee, M.R. (comp.)

    1988-12-01T23:59:59.000Z

    On October 25--26, 1988, about 60 people took part in an Advanced Neutron Source (ANS) Safety Workshop, organized in cooperation with the Oak Ridge Operations (ORO) Office of the Department of Energy (DOE) and held in Knoxville, Tennessee. After a plenary session at which ANS Project staff presented status reports on the ANS design, research and development (R and D), and safety analysis efforts, the workshop broke into three working groups, each covering a different topic: Environmental and Waste Management, Applicable Regulatory Safety Criteria and Goals, and Reactor Concepts. Each group was asked to review the Project's approach to safety-related issues and to provide guidance on future reactor safety needs or directions for the Project. With the help of able chairmen, assisted by reporters and secretarial support, the working groups were extremely successful. Draft reports from each group were prepared before the workshop closed, and the major findings of each group were presented for review and discussion by the entire workshop attendance. This report contains the final version of the group reports, incorporating the results of the overall review by all the workshop participants.

  18. Environmental monitoring plan for Waste Area Grouping 6 at Oak Ridge National Laboratory, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    NONE

    1995-09-01T23:59:59.000Z

    This document presents an Environmental Monitoring Plan (EMP) for Waste Area Grouping (WAG 6) at Oak Ridge National Laboratory (ORNL). This document updates a draft monitoring plan developed in 1993. The draft plan was never finalized awaiting resolution of the mechanisms for addressing RCRA concerns at a site where the CERCLA process resulted in a decision to defer action, i.e., postpone closure indefinitely. Over the past two years the Tennessee Department of Environment and Conservation (TDEC), US Department of Energy (DOE), and US Environmental Protection Agency (EPA) Region IV, have agreed that RCRA authority at the site will be maintained through a post- closure permit; ``closure`` in this case referring to deferred action. Both a Revised Closure Plan (DOE 1995a) and a Post-Closure Permit Application (DOE 1995b) have been developed to document this agreement; relevant portions of the EMP will be included in the RCRA Post-Closure Permit Application. As the RCRA issues were being negotiated, DOE initiated monitoring at WAG 6. The purpose of the monitoring activities was to (1) continue to comply with RCRA groundwater quality assessment requirements, (2) install new monitoring equipment, and (3) establish the baseline conditions at WAG 6 against which changes in contaminant releases could be measured. Baseline monitoring is scheduled to end September 30, 1995. Activities that have taken place over the past two years are summarized in this document.

  19. Lease of Parcel ED-1 of the Oak Ridge Reservation by the East Tennessee Economic Council

    SciTech Connect (OSTI)

    NONE

    1996-04-01T23:59:59.000Z

    The US Department of Energy (DOE) has completed an environmental assessment (DOE/EA-1113) for the proposed lease of 957.16 acres of the Oak Ridge Reservation (ORR) to the East Tennessee Economic Council (ETEC), a non-profit community organization, for a period of 10 years, with an option for renewal. ETEC proposes to develop an industrial park on the leased site to provide employment opportunities for DOE and contractor employees affected by decreased federal funding. Based on the results of the analysis reported in the EA and implementation of mitigation measures defined in this Finding of No Significant Impact (FONSI), DOE has determined that the proposed action is not a major Federal action that would significantly affect the quality of the human environment within the context of the National Environmental Policy Act of 1969 (NEPA). Therefore, preparation of an environmental impact statement (EIS) is not necessary, and DOE is issuing this mitigated FONSI. DOE will implement a Mitigation Action Plan for this project and provide annual reports on mitigation and monitoring.

  20. Certification report for final closure of Y-12 Centralized Sanitary Landfill II, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    NONE

    1995-12-31T23:59:59.000Z

    This report represents the Geotek Engineering Company, Inc., (Geotek) record of activities to support certification of final closure Of the subject Y-12 Centralized Sanitary Landfill II. Ex as noted herein, final closure of the landfill was completed in accordance with the Y-12 Centralized Sanitary Landfill 11 Closure/Post Closure Plan, Revision 2, submitted by the US Department of Energy (DOE) to the Tennessee Department of Environment and Conservation (TDEC) on April 14, 1992, and approved by TDEC on May 27, 1994 (the ``Closure Plan``). minor modification to the Closure Plan allowing partial closure of the Y-12 Centralized Sanitary Landfill II (Phase 1) was approved by TDEC on August 3, 1994. The Phase I portion of the closure for the subject landfill was completed on March 25, 1995. A closure certification report entitled Certification Report for Partial Closure of Y-12 Centralized Sanitary Landfill II was submitted to Lockheed Martin Energy Systems, Inc., (LMES) on March 28, 1995. The final closure represents the completion of the closure activities for the entire Y-12 Centralized Sanitary Landfill II Site. The contents of this report and accompanying certification are based on observations by Geotek engineers and geologists during closure activities and on review of reports, records, laboratory test results, and other information furnished to Geotek by LMES.

  1. Site descriptions of environmental restoration units at the Oak Ridge K-25 Site, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Goddard, P.L.; Legeay, A.J.; Pesce, D.S.; Stanley, A.M.

    1995-11-01T23:59:59.000Z

    This report, Site Descriptions of Environmental Restoration Units at the Oak Ridge K-25 Site, Oak Ridge, Tennessee, is being prepared to assimilate information on sites included in the Environmental Restoration (ER) Program of the K-25 Site, one of three major installations on the Oak Ridge Reservation (ORR) built during World War III as part of the Manhattan Project. The information included in this report will be used to establish program priorities so that resources allotted to the K-25 ER Program can be best used to decrease any risk to humans or the environment, and to determine the sequence in which any remedial activities should be conducted. This document will be updated periodically in both paper and Internet versions. Units within this report are described in individual data sheets arranged alphanumerically. Each data sheet includes entries on project status, unit location, dimensions and capacity, dates operated, present function, lifecycle operation, waste characteristics, site status, media of concern, comments, and references. Each data sheet is accompanied by a photograph of the unit, and each unit is located on one of 13 area maps. These areas, along with the sub-area, unit, and sub-unit breakdowns within them, are outlined in Appendix A. Appendix B is a summary of information on remote aerial sensing and its applicability to the ER program.

  2. Characterization plan for the Oak Ridge National Laboratory Area-Wide Groundwater Program, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Not Available

    1994-08-01T23:59:59.000Z

    This characterization plan has been developed as part of the U.S. Department of Energy`s (DOE`s) investigation of the Groundwater Operable Unit (GWOU) at Oak Ridge National Laboratory (ORNL) located near Oak Ridge, Tennessee. The first iteration of the characterization plan is intended to serve as a strategy document to guide subsequent GWOU remedial investigations. The plan provides a rationale and organization for groundwater data acquisition, monitoring, and remedial actions to be performed during implementation of environmental restoration activities associated with the ORNL GWOU. It is important to note that the characterization plan for the ORNL GWOU is not a prototypical work plan. As such, remedial investigations will be conducted using annual work plans to manage the work activities, and task reports will be used to document the results of the investigations. Sampling and analysis results will be compiled and reported annually with a review of data relative to risk (screening level risk assessment review) for groundwater. This characterization plan outlines the overall strategy for the remedial investigations and defines tasks that are to be conducted during the initial phase of investigation. This plan is presented with the understanding that more specific addenda to the plan will follow.

  3. Environmental Baseline Survey Report for the Title Transfer of the K-792 Switchyard Complex at the East Tennessee Technology Park, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    SAIC

    2009-12-01T23:59:59.000Z

    This environmental baseline survey (EBS) documents the baseline environmental conditions of the U. S. Department of Energy's (DOE's) K-792 Switchyard Complex, which includes the former K-792 Switchyard, the K-79 1-B building, the K-796-A building, and the K-792 Northern Expansion Area located in the northwestern portion of the East Tennessee Technology Park (ETTP). The total area of the property is approximately 19.91 acres. DOE is proposing to transfer the title of this land area and buildings to the Heritage Center, LLC (Heritage Center), a subsidiary corporation of the Community Reuse Organization of East Tennessee (CROET). This report provides supporting information for the transfer of this government-owned facility at ETTP to a non-federal entity. The area proposed for title transfer includes the former K-792 Switchyard, the K-792 Northern Expansion Area, Bldg. K-791-B, Bldg. K-796-A, and the underlying property known as the underlying fee. Located within the K-792 Switchyard footprint but not included in the transfer are Bldg. K-131 0-MP and Bldg. K- 131 0-MQ, two buildings owned by a private company that leases space in the northern portion of the Switchyard. The transfer footprint is bounded by Perimeter Road to the north and west, the parking area for Portal 8 to the south, and primarily the former K-792 Powerhouse Complex and Avenue 'U' North to the east; however, the eastern boundary along the Northern Expansion area has no physical features associated with it. Zone 2 remedial action objectives were developed by the DVS to support the future use of ETTP as a mixed-use commercial and industrial park. Therefore, remediation criteria were designed for the protection of the future industrial worker under the assumption the worker normally would not have the potential for exposure to soils at depths below 10 ft below ground surface (bgs). Accordingly, land use controls (LUCs) have been established to restrict disturbance of soils below 10 ft deep and to limit future land use to industriallcornmercial activities. Where the need for LUCs below 10 ft bgs is not warranted, this is so stated and explained. Once all actions associated with the DVS for Zone 1 and Zone 2 are completed and the data support it, there will be a re-evaluation with EPA and TDEC for the restriction on excavation below 10 ft. The DVS process and the preparation of this report included visual and physical inspections of the property and adjacent properties, a detailed records search, sampling and analysis of soils, radiological walkover surveys, and a risk evaluation. Resources evaluated as part of the records search included Federal Government records, title documents, aerial photographs that may reflect prior uses, and interviews with current and former employees 1 involved in the operations on the real property to identify any areas on the property where hazardous substances and petroleum products, or their derivatives, and acutely hazardous wastes were stored for one year or more, known to have been released, or disposed of. In addition, radiological surveys of Bldgs. K-791-B and K-796-A were conducted to assess the buildings radiological condition. Soil vapor sampling and polychlorinated biphenyl (PCB) swipe sampling also were conducted within the buildings. Based on the U. S. Department of Energy's (DOE's) review of the existing information, including discussions and interviews referenced herein, and evaluation of the data gathered in preparation of the environmental baseline survey (EBS) for the K-792 Switchyard Complex, DOE recommends the following: Due to the uncertainty associated with the nature of the on-site groundwater and the need to evaluate and possibly address groundwater in the future, DOE recommends that the transfer of the K-792 Switchyard Complex be achieved by a covenant deferral per the Comprehensive Environmental Response, Compensation, and Liability Act of 1980 (CERCLA) Sect. 120(h)(3)(c). Land use restrictions associated with the covenant deferral are described.

  4. Large internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko, Gerald Hnig, Christian Kindel, Sven Rodt, Andr Strittmatter et al.

    E-Print Network [OSTI]

    Nabben, Reinhard

    Large internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko, Gerald Hönig, Christian transitions in wurtzite InGaN/GaN coupled quantum dot nanowire heterostructures with polarization internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko,a Gerald Hönig, Christian Kindel, Sven

  5. Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Guibao Xu, Guan Sun, Yujie J. Ding, Hongping Zhao, Guangyu Liu et al.

    E-Print Network [OSTI]

    Gilchrist, James F.

    Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Guibao Xu, Guan Sun, Yujie overgrowth on residual strain and In incorporation in a-plane InGaN/GaN quantum wells on r- sapphire substrates J. Appl. Phys. 113, 023506 (2013) Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple

  6. Quantum confinement in GaP nanoclusters

    SciTech Connect (OSTI)

    Laurich, B.K.; Smith, D.C.; Healy, M.D.

    1994-06-01T23:59:59.000Z

    We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.

  7. Closure certification report for the Bear Creek burial grounds B area and walk-in pits at the Oak Ridge Y-12 Plant, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Not Available

    1994-06-01T23:59:59.000Z

    On July 5, 1993, the revised RCRA Closure Plan for the Bear Creek Burial Grounds B Area and Walk-In Pits at the Oak Ridge Y-12 Plant, Oak Ridge, Tennessee, DOE/OR/01-1100&D3 and Y/ER-53&D3, was approved by the Tennessee Department of Environment and Conservation (TDEC). The closure activities described in that closure plan have been performed. The purpose of this document is to summarize the closure activities for B Area and Walk-In Pits (WIPs), including placement of the Kerr Hollow Quarry debris at the WIPs.

  8. UID-GaN doping1016 cm-3 2 m 5 m2 m

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    2 µm Drain Silicon UID-GaN ­ doping1016 cm-3 1.1 µm 2 µm GateSource 2 µm 5 µm2 µm AirAir Al0.25GaN ­ doping1015 cm-3 30 nm Drain Silicon UID-GaN P-GaNSource AirAir AlxGaN Drain Silicon UID-GaN GateSource AirAir AlxGaN Gate (a) (b) (c) Drain Silicon UID-GaN P-GaNSource AirAir AlxGaN Gate (d) P-GaN P-GaN 30

  9. Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers

    SciTech Connect (OSTI)

    Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

    2013-05-28T23:59:59.000Z

    Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

  10. Epitaxial GaN films by hyperthermal ion-beam nitridation of Ga droplets

    SciTech Connect (OSTI)

    Gerlach, J. W.; Ivanov, T.; Neumann, L.; Hoeche, Th.; Hirsch, D.; Rauschenbach, B. [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), D-04318 Leipzig (Germany)

    2012-06-01T23:59:59.000Z

    Epitaxial GaN film formation on bare 6H-SiC(0001) substrates via the process of transformation of Ga droplets into a thin GaN film by applying hyperthermal nitrogen ions is investigated. Pre-deposited Ga atoms in well defined amounts form large droplets on the substrate surface which are subsequently nitridated at a substrate temperature of 630 Degree-Sign C by a low-energy nitrogen ion beam from a constricted glow-discharge ion source. The Ga deposition and ion-beam nitridation process steps are monitored in situ by reflection high-energy electron diffraction. Ex situ characterization by x-ray diffraction and reflectivity techniques, Rutherford backscattering spectrometry, and electron microscopy shows that the thickness of the resulting GaN films depends on the various amounts of pre-deposited gallium. The films are epitaxial to the substrate, exhibit a mosaic like, smooth surface topography and consist of coalesced large domains of low defect density. Possible transport mechanisms of reactive nitrogen species during hyperthermal nitridation are discussed and the formation of GaN films by an ion-beam assisted process is explained.

  11. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08T23:59:59.000Z

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  12. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

    1998-01-01T23:59:59.000Z

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  13. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09T23:59:59.000Z

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  14. High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

    SciTech Connect (OSTI)

    Koblmueller, G. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Walter Schottky Institut, Technische Universitaet Muenchen, D-85748 Garching (Germany); Chu, R. M.; Raman, A.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Speck, J. S. [Department of Materials, University of California, Santa Barbara, California 93106 (United States)

    2010-02-15T23:59:59.000Z

    We present combined in situ thermal cleaning and intentional doping strategies near the substrate regrowth interface to produce high-quality AlGaN/GaN high electron mobility transistors on semi-insulating (0001) GaN templates with low interfacial impurity concentrations and low buffer leakage. By exposing the GaN templates to an optimized thermal dissociation step in the plasma-assisted molecular beam epitaxy environment, oxygen, carbon, and, to lesser extent, Si impurities were effectively removed from the regrowth interface under preservation of good interface quality. Residual Si was further compensated by C-doped GaN via CBr{sub 4} to yield highly resistive GaN buffer layers. Improved N-rich growth conditions at high growth temperatures were then utilized for subsequent growth of the AlGaN/GaN device structure, yielding smooth surface morphologies and low residual oxygen concentration with large insensitivity to the (Al+Ga)N flux ratio. Room temperature electron mobilities of the two-dimensional electron gas at the AlGaN/GaN interface exceeded >1750 cm{sup 2}/V s and the dc drain current reached {approx}1.1 A/mm at a +1 V bias, demonstrating the effectiveness of the applied methods.

  15. Table 1 -ESTIMATED REDUCTION IN 1985 COTTON YIELDS RESULTING FROM INSECTDAMAGE TOTAL YIELD 13,622 bales INSECTS Loss in AL AZ AR CA FL GA LA MS MO NM NC OK SC TN TX VA No.

    E-Print Network [OSTI]

    Ray, David

    Average cost for all states nTotal yield for all states o Total acres for all states *Does not include BWE cost

  16. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01T23:59:59.000Z

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  17. PHYSICAL REVIEW B 85, 045319 (2012) Photoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities

    E-Print Network [OSTI]

    Vuckovic, Jelena

    2012-01-01T23:59:59.000Z

    in materials systems, including InP/InGaP,6­9 InP/GaP,10,11 InP/AlGaInP,12,13 GaInP/GaP,14 InAs/GaP,15 and Al have been observed only in the InP/InGaP and InP/AlGaInP systems. GaP-based materials, by contrastP compared to InGaP is preferable for on-chip frequency downconversion to telecom wavelengths. Recently,17

  18. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States); Yarrison-Rice, Jan [Department of Physics, Miami University, Oxford, OH 45056 (United States); Gao, Qiang; Tan, Hoe; Jagadish, Chennupati [Department of Electronic Materials and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Etheridge, Joanne [Monash Centre for Electron Microscopy, Monash University, Victoria, 3800 (Australia); Wong, Bryan M. [Materials Chemistry Department, Sandia National Laboratories, Livermore, CA 94551 (United States)

    2013-12-04T23:59:59.000Z

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  19. Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

    SciTech Connect (OSTI)

    Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France)] [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)] [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Física, Universidade Federal do Ceará, P.O. Box 6030, Fortaleza–CE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain)] [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Goñi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)] [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)

    2014-01-06T23:59:59.000Z

    The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

  20. Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates

    SciTech Connect (OSTI)

    Kandaswamy, P. K.; Monroy, E. [CEA/CNRS group 'Nanophysique et semiconducteurs', INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Machhadani, H.; Sakr, S.; Tchernycheva, M.; Julien, F. H. [Photis, Institut d'Electronique Fondamentale, Universite Paris-Sud, 91405 Orsay Cedex (France); Bougerol, C. [CEA/CNRS group 'Nanophysique et semiconducteurs', Institut Neel, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)

    2009-10-05T23:59:59.000Z

    We report on the observation of midinfrared intersubband absorption in Si-doped GaN/AlGaN superlattices grown by plasma-assisted molecular-beam epitaxy on semi-insulating GaN-on-Si(111) templates. TM-polarized absorption attributed to transition between the first two electronic levels in the quantum wells peaked in the range from 2 to 9 {mu}m. The relative spectral width remains around 20% in the whole midinfrared spectral range. Doping is predicted to have a large influence on the intersubband absorption energy due to screening of polarization-induced internal electric field.

  1. Environmental Cleanup of the East Tennessee Technology Park Year One - Execution with Certainty SM - 13120

    SciTech Connect (OSTI)

    Schubert, A.L. [URS - CH2M Oak Ridge LLC, P.O. Box 4699, Oak Ridge, TN 37831-7294 (United States)] [URS - CH2M Oak Ridge LLC, P.O. Box 4699, Oak Ridge, TN 37831-7294 (United States)

    2013-07-01T23:59:59.000Z

    On August 1, 2011, URS - CH2M Oak Ridge LLC (UCOR) began its five-year, $1.4 billion cleanup of the East Tennessee Technology Park (ETTP), located on the U.S. Department of Energy's (DOE) Oak Ridge Reservation in Tennessee. UCOR will close out cleanup operations that began in 1998 under a previous contract. When the Contract Base scope of work [1] is completed in 2016, the K-25 gaseous diffusion building will have been demolished and all waste dispositioned, demolition will have started on the K-27 gaseous diffusion building, all contact-handled and remote-handled transuranic waste in inventory (approximately 500 cubic meters) will have been transferred to the Transuranic Waste Processing Center, previously designated 'No-Path-To-Disposition Waste' will have been dispositioned to the extent possible, and UCOR will have managed DOE Office of Environmental Management (EM)- owned facilities at ETTP, Oak Ridge National Laboratory (ORNL), and the Y-12 National Security Complex in a safe and cost-effective manner. Since assuming its responsibilities as the ETTP cleanup contractor, UCOR has completed its life-cycle Performance Measurement Baseline; received its Earned Value Management System (EVMS) certification; advanced the deactivation and demolition (D and D) of the K-25 gaseous diffusion building; recovered and completed the Tank W-1A and K-1070-B Burial Ground remediation projects; characterized, packaged, and shipped contact-handled transuranic waste to the Transuranic Waste Processing Center; disposed of more than 90,000 cubic yards of cleanup waste while managing the Environmental Management Waste Management Facility (EMWMF); and provided operations, surveillance, and maintenance activities at DOE EM facilities at ETTP, ORNL, and the Y-12 National Security Complex. Project performance as of December 31, 2012 has been excellent: - Cost Performance Index - 1.06; - Schedule Performance Index - 1.02. At the same time, since safety is the foundation of all cleanup work, UCOR's safety record goes hand in hand with its excellent project performance. Through calendar year 2012, UCOR's recordable injury rate was 0.33, and the company has worked close to 4 million hours without a lost work day injury. UCOR's safety record is one of the best in the DOE EM Complex. This performance was due, in large part, to the people and processes URS and CH2M HILL, the parent companies of UCOR, brought to the project. Key approaches included: - Selected and deployed experienced staff in key leadership positions throughout the organization; - Approached 'Transition' as the 'true' beginning of the cleanup project - kicking off a number of project initiatives such as Partnering, PMB development, D and D Plan execution, etc. - Established a project baseline for performance measurement and obtained EVMS certification in record time; - Determined material differences and changed conditions that warranted contract change - then quickly addressed these changes with the DOE client; - Aligned the project and the contract within one year - also done in record time; - Implemented Safety Trained Supervisor and Safety Conscious Work Environment Programs, and kicked off the pursuit of certification under DOE's Voluntary Protection Program. (authors)

  2. Survey of protected vascular plants on the Oak Ridge Reservation, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Awl, D.J.; Pounds, L.R.; Rosensteel, B.A.; King, A.L.; Hamlett, P.A.

    1996-06-01T23:59:59.000Z

    Vascular plant surveys were initiated during fiscal year 1992 by the environmentally sensitive areas program to determine the baseline condition of threatened and endangered (T&E) vascular plant species on the Oak Ridge Reservation (ORR). T&E species receive protection under federal and state regulations. In addition, the National Environmental Policy Act (NEPA) requires that federally-funded projects avoid or mitigate impacts to listed species. T&E plant species found on or near the U.S. Department of Energy`s (DOE) Oak Ridge Reservation (ORR) are identified. Twenty-eight species identified on the ORR are listed by the Tennessee Department of Environment and Conservation as either endangered, threatened, or of special concern. Four of these have been under review by the U.S. Fish and Wildlife Service for possible listing (listed in the formerly-used C2 candidate category). Additional species listed by the state occur near and may be present on the ORR. A range of habitats support the rare taxa on the ORR: river bluffs, sinkholes, calcareous barrens, wetlands, utility corridors, and forests. The list of T&E plant species and their locations on the ORR should be considered provisional because the entire ORR has not been surveyed, and state and federal status of all species continues to be updated. The purpose of this document is to present information on the listed T&E plant species currently known to occur on the ORR as well as listed species potentially occurring on the ORR based on geographic range and habitat availability. For the purpose of this report, {open_quotes}T&E species{close_quotes} include all federal- and state-listed species, including candidates for listing, and species of special concern. Consideration of T&E plant habitats is an important component of resource management and land-use planning; protection of rare species in their natural habitat is the best method of ensuring their long-term survival.

  3. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01T23:59:59.000Z

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  4. Degradation mechanisms of GaN high electron mobility transistors

    E-Print Network [OSTI]

    Joh, Jungwoo

    2007-01-01T23:59:59.000Z

    In spite of their extraordinary performance, GaN high electron mobility transistors (HEMT) have still limited reliability. In RF power applications, GaN HEMTs operate at high voltage where good reliability is essential. ...

  5. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgül Okur [Department of Statistics, Giresun University, Giresun (Turkey); Akdemir, Hande Günay; ??can, ?mdat [Department of Mathematics, Giresun University, Giresun (Turkey)

    2014-08-20T23:59:59.000Z

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  6. TEM-Untersuchungen an GaN basierten Halbleiterheterostrukturen fur

    E-Print Network [OSTI]

    Schubart, Christoph

    TEM-Untersuchungen an GaN basierten Halbleiterheterostrukturen f¨ur optoelektronische Anwendungen . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 5.1.2 Versetzungen bei Homoapitaxie auf GaN-Substraten . . . . 79 5.2 Versetzungsreduktion durch

  7. GaN Nanopore Arrays: Fabrication and Characterization

    E-Print Network [OSTI]

    Wang, Yadong

    GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...

  8. Height stabilization of GaSb/GaAs quantum dots by Al-rich capping

    SciTech Connect (OSTI)

    Smakman, E. P., E-mail: e.p.smakman@tue.nl; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven (Netherlands); DeJarld, M.; Martin, A. J.; Millunchick, J. [Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Luengo-Kovac, M.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2014-09-01T23:59:59.000Z

    GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.

  9. 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly ...

  10. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A. [Institute of Physics, NASU, Pr. Nauki 46, Kiev 03028 (Ukraine); Belyaev, A. E. [Institute of Semiconductor Physics, NASU, Pr. Nauki 45, Kiev 03028 (Ukraine); Vitusevich, S. A., E-mail: s.vitusevich@fz-juelich.de; Hardtdegen, H.; Lüth, H. [Peter Grünberg Institute (PGI-8,PGI-9), Forschungszentrum Jülich, Jülich D-52425 (Germany)

    2014-02-17T23:59:59.000Z

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8?×?10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  11. AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications

    E-Print Network [OSTI]

    Seo, Kwang Seok

    AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching 16, 2004; accepted May 10, 2005; published September 8, 2005) We have proposed and fabricated an AlGaN/GaN: GaN, AlGaN, HEMT, switch 1. Introduction GaN has attracted attention for high-power and high

  12. Cubic AlGaN/GaN Hetero-Junction Field-Effect Transistors with Normally-on and Normally-off

    E-Print Network [OSTI]

    As, Donat Josef

    Cubic AlGaN/GaN Hetero-Junction Field-Effect Transistors with Normally-on and Normally-effect transistors (HFETs) in GaN technology. HFET structures were fabricated of non-polar cubic AlGaN/GaN hetero insulation of 3C-SiC was realized by Ar+ implantation before c-AlGaN/GaN growth. HFETs with normally

  13. A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    WE4A-5 A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs Jane J a GaN-based broadband power amplifier using AlGaN/GaN-HEMTs, grown on sapphire substrates amplifier using GaN- HEMTs-on-Sapphire. I INTRODUCTION GaN HEMTs have enormous potential for realizing high

  14. IPAP Conference Series 1: IWN2000, Nov., 2000 1 Morphology Dependent Growth Kinetics of Ga-polar GaN(0001)

    E-Print Network [OSTI]

    Cohen, Philip I.

    IPAP Conference Series 1: IWN2000, Nov., 2000 1 Morphology Dependent Growth Kinetics of Ga-polar GaN, cohen@ece.umn.edu GaN grown on Ga polar GaN templates prepared by metal-organic vapor deposition shows to equilibrium models of the growth. The results indicate that Ga-polar GaN(0001) has a step energy of the order

  15. Engineering of AlGaN-Delta-GaN Quantum-Well Gain Media for Mid-and Deep-Ultraviolet Lasers

    E-Print Network [OSTI]

    Gilchrist, James F.

    Engineering of AlGaN-Delta-GaN Quantum-Well Gain Media for Mid- and Deep-Ultraviolet Lasers Volume.1109/JPHOT.2013.2248705 1943-0655/$31.00 Ó2013 IEEE #12;Engineering of AlGaN-Delta-GaN Quantum-Well Gain@Lehigh.Edu). Abstract: The gain characteristics of AlGaN-delta-GaN quantum wells (QWs) with varying delta-GaN positions

  16. Recent progress in InGaAsSb/GaSb TPV devices

    SciTech Connect (OSTI)

    Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

    1996-05-01T23:59:59.000Z

    AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

  17. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

    2014-09-26T23:59:59.000Z

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  18. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Haj?asz, M., E-mail: m.hajlasz@m2i.nl [Materials innovation institute (M2i), Mekelweg 2, 2628 CD, Delft (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); Gravesteijn, D. J. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Rietveld, F. J. R. [NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen (Netherlands); Schmitz, J. [MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands)

    2014-06-16T23:59:59.000Z

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  19. TEM and HRXRD Analysis of LP MOVPE Grown InGaP/GaAs epilayers

    SciTech Connect (OSTI)

    Pelosi, Claudio; Bosi, Matteo; Attolini, Giovanni; Germini, Fabrizio; Frigeri, Cesare [CNR-IMEM Institute, Parco Area delle Scienze 37a, Loc Fontanini 43010 Parma (Italy); Prutskij, Tatiana [Instituto de Ciencias, BUAP, Privada 17 Norte, no. 3417, colSanMiguel Hueyotlipan, 72050 Puebla, Pue. (Mexico)

    2007-04-10T23:59:59.000Z

    The diffusion phenomena at interfaces between GaAs/InGaP layers grown by low pressure MOVPE have been studied by dark field (DF) transmission Electron Microscopy (TEM) and High resolution X-ray Diffractometry (HRXRD). By comparing the results of the two techniques a mismatched layer containing P or P and In has been evidenced. The causes of this behavior are briefly discussed.

  20. Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes

    E-Print Network [OSTI]

    Cornelius S. Bausch; Aune Koitmäe; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

    2013-05-06T23:59:59.000Z

    We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

  1. InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening

    SciTech Connect (OSTI)

    Glauser, Marlene; Mounir, Christian; Rossbach, Georg; Feltin, Eric; Carlin, Jean-François; Butté, Raphaël; Grandjean, Nicolas [École Polytechnique Fédérale de Lausanne (EPFL), Institute of Condensed Matter Physics, CH-1015 Lausanne (Switzerland)

    2014-06-21T23:59:59.000Z

    Contrary to the case of III-nitride based visible light-emitting diodes for which the inhomogeneous linewidth broadening characteristic of InGaN-based multiple quantum well (MQW) heterostructures does not appear as a detrimental parameter, such a broadening issue can prevent a microcavity (MC) system entering into the strong light-matter coupling regime (SCR). The impact of excitonic disorder in low indium content (x???0.1) In{sub x}Ga{sub 1–x}N/GaN MQW active regions is therefore investigated for the subsequent realization of polariton laser diodes by considering both simulations and optical characterizations. It allows deriving the requirements for such MQWs in terms of absorption, emission linewidth, and Stokes shift. Systematic absorption-like and photoluminescence (PL) spectroscopy experiments are performed on single and multiple In{sub 0.1}Ga{sub 0.9}N/GaN quantum wells (QWs). Micro-PL mappings reveal a low temperature PL linewidth of ?30?meV, compatible with SCR requirements, for single QWs for which the microscopic origin responsible for this broadening is qualitatively discussed. When stacking several InGaN/GaN QWs, a departure from such a narrow linewidth value and an increase in the Stokes shift are observed. Various possible reasons for this degradation such as inhomogeneous built-in field distribution among the QWs are then identified. An alternative solution for the MC design to achieve the SCR with the InGaN alloy is briefly discussed.

  2. Rapid Communications Strong piezoelectricity in individual GaN nanowires

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    Rapid Communications Strong piezoelectricity in individual GaN nanowires Majid Minary@northwestern.edu (Received 12 July 2011; accepted 15 September 2011) Abstract GaN nanowires are promising building blocks piezoelectricity in individual single-crystal GaN nanowires revealed by direct measurement of the piezoelectric

  3. GaN Radiation Detectors for Particle Physics and

    E-Print Network [OSTI]

    Glasgow, University of

    GaN Radiation Detectors for Particle Physics and Synchrotron Applications James Paul Grant and monitoring applications. Gallium nitride (GaN) was investigated as a radiation hard particle detector diameter on three epitaxial GaN wafers grown on a sapphire sub- strate. Two of the wafers were obtained

  4. New Faces of GaN: Growth, Doping and Devices

    E-Print Network [OSTI]

    California at Santa Barbara, University of

    New Faces of GaN: Growth, Doping and Devices James S. Speck Materials Department University of California Santa Barbara, CA LEO of a-GaN from circular opening Engineering Insights 2006 #12;#12;Personnel. Wraback (ARL) $$$ JST ­ ERATO UCSB SSLDC AFOSR ONR #12;Reversed direction of polarization Bulk GaN

  5. Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

    SciTech Connect (OSTI)

    Perez-Tomas, A.; Fontsere, A.; Llobet, J. [IMB-CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, CAT (Spain); Placidi, M. [IREC, Jardins Dones de Negre 1, 08930 Sant Adria de Besos, Barcelona (Spain); Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Baron, N. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); PICOGIGA International, Pl M. Rebuffat, Courtaboeuf 7, 91140 Villejust (France)

    2013-05-07T23:59:59.000Z

    The vertical bulk (drain-bulk) current (I{sub db}) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I{sub db} (25-300 Degree-Sign C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E{sub a}), the (soft or destructive) vertical breakdown voltage (V{sub B}), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E{sub a} = 0.35 eV at T = 25-300 Degree-Sign C; V{sub B} = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E{sub a} = 2.5 eV at T > 265 Degree-Sign C; V{sub B} > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E{sub a} = 0.35 eV at T > 150 Degree-Sign C; V{sub B} = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

  6. The Yates Dissertation Fellowships provide recognition and financial support to outstanding doctoral students in all fields at the University of Tennessee, Knoxville during the dissertation

    E-Print Network [OSTI]

    Dai, Pengcheng

    The Yates Dissertation Fellowships provide recognition and financial support to outstanding doctoral students in all fields at the University of Tennessee, Knoxville during the dissertation process standing who will have completed admission to candidacy for the doctoral degree and reached dissertation

  7. China-US Workshop on Biotechnology of Bioenergy Plants, Nov. 16-17, 2009, Knoxville, Tennessee, USA Page 1 CChhiinnaa--UUSS WWoorrkksshhoopp oonn BBiiootteecchhnnoollooggyy ooff BBiiooeenneerrggyy PPllaannttss

    E-Print Network [OSTI]

    Ginzel, Matthew

    China-US Workshop on Biotechnology of Bioenergy Plants, Nov. 16-17, 2009, Knoxville, Tennessee, USA://isse.utk.edu/jrceec/). The focus of this agreement is to promote research collaboration, academic exchange, student education) environmental sustainability of bioenergy production, (3) ecological foundations of water resources and quality

  8. Site characterization plan for groundwater in Waste Area Grouping 1 at Oak Ridge National Laboratory, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Lee, R.R.; Curtis, A.H.; Houlberg, L.M.; Purucker, S.T.; Singer, M.L.; Tardiff, M.F.; Wolf, D.A.

    1994-07-01T23:59:59.000Z

    The Waste Area Grouping (WAG) 1 Groundwater Operable Unit (OU) at Oak Ridge National Laboratory (ORNL) in Oak Ridge, Tennessee, is undergoing a site characterization to identify environmental contamination that may be present. This document, Site Characterization Report for Groundwater in Waste Area Grouping I at Oak Ridge National Laboratory, Oak Ridge, Tennessee, identifies areas of concern with respect to WAG 1 groundwater and presents the rationale, justification, and objectives for conducting this continuing site characterization. This report summarizes the operations that have taken place at each of the areas of concern in WAG 1, summarizes previous characterization studies that have been performed, presents interpretations of previously collected data and information, identifies contaminants of concern, and presents an action plan for further site investigations and early actions that will lead to identification of contaminant sources, their major groundwater pathways, and reduced off-site migration of contaminated groundwater to surface water. Site characterization Activities performed to date at WAG I have indicated that groundwater contamination, principally radiological contamination, is widespread. An extensive network of underground pipelines and utilities have contributed to the dispersal of contaminants to an unknown extent. The general absence of radiological contamination in surface water at the perimeter of WAG 1 is attributed to the presence of pipelines and underground waste storage tank sumps and dry wells distributed throughout WAG 1 which remove more than about 40 million gal of contaminated groundwater per year.

  9. TN Consolidated Retirement System (TCRS) Benefit Estimate Request If you are a member of TCRS and an employee at the University of Memphis, you may request an estimate of your

    E-Print Network [OSTI]

    Dasgupta, Dipankar

    years of service OR at least 30 years of service) o Early Retirement (age 55 with at least 5 years TN Consolidated Retirement System (TCRS) Benefit Estimate Request If you are a member of TCRS and an employee at the University of Memphis, you may request an estimate of your retirement benefit by providing

  10. A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+

    E-Print Network [OSTI]

    McKittrick, Joanna

    A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

  11. Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

    E-Print Network [OSTI]

    improve the room-temperature carrier mobility in wurtzite AlN/GaN/AlN heterostructures, which is limited consider a narrow groove made of InxGa1-xN with small In content x inside a wurtzite AlN/GaN/AlN heteroN 2 nm /GaN 3 nm /AlN 3 nm . A well-known feature of wurtzite heterostructures is a strong buit

  12. Growth of GaN on porous SiC and GaN substrates C. K. Inoki1

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Growth of GaN on porous SiC and GaN substrates C. K. Inoki1 , T. S. Kuan1 , Ashutosh Sagar2 , C, Albuquerque, NM 87185 4 Beckman Institute, University of Illinois, Urbana, IL 61801 GaN films were grown on porous SiC and GaN templates using both plasma-assisted molecular beam epitaxy (PAMBE) and metal

  13. Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer

    E-Print Network [OSTI]

    Ozbay, Ekmel

    N buffer layer BL grown on an Al2O3 substrate and an AlN IL grown under the AlGaN ternary layer TL. In the present study, we investigate the effects of an AlN BL on an Al2O3 substrate and an AlN IL between an AlGaNStructural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer

  14. From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

    SciTech Connect (OSTI)

    Fisichella, G. [CNR-IMM, Strada VIII, 5, 95121 Catania (Italy); Department of Electronic Engineering, University of Catania, 95124 Catania (Italy); Greco, G.; Roccaforte, F.; Giannazzo, F. [CNR-IMM, Strada VIII, 5, 95121 Catania (Italy)

    2014-08-11T23:59:59.000Z

    The electrical behaviour of graphene (Gr) contacts to Al{sub x}Ga{sub 1?x}N/GaN heterostructures has been investigated, focusing, in particular, on the impact of the AlGaN microstructure on the current transport at Gr/AlGaN interface. Two Al{sub 0.25}Ga{sub 0.75}N/GaN heterostructures with very different quality in terms of surface roughness and defectivity, as evaluated by atomic force microscopy (AFM) and transmission electron microscopy, were compared in this study, i.e., a uniform and defect-free sample and a sample with a high density of typical V-defects, which locally cause a reduction of the AlGaN thickness. Nanoscale resolution current voltage (I-V) measurements by an Au coated conductive AFM tip were carried out at several positions both on the bare and Gr-coated AlGaN surfaces. Rectifying contacts were found onto both bare AlGaN surfaces, but with a more inhomogeneous and lower Schottky barrier height (?{sub B}???0.6?eV) for AlGaN with V-defects, with respect to the case of the uniform AlGaN (?{sub B}???0.9?eV). Instead, very different electrical behaviours were observed in the presence of the Gr interlayer between the Au tip and AlGaN, i.e., a Schottky contact with reduced barrier height (?{sub B} ? 0.4?eV) for the uniform AlGaN and an Ohmic contact for the AlGaN with V-defects. Interestingly, excellent lateral uniformity of the local I-V characteristics was found in both cases and can be ascribed to an averaging effect of the Gr electrode over the AlGaN interfacial inhomogeneities. Due to the locally reduced AlGaN layer thickness, V defect act as preferential current paths from Gr to the 2DEG and can account for the peculiar Ohmic behaviour of Gr contacts on defective AlGaN.

  15. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01T23:59:59.000Z

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  16. X-ray diffraction analysis of InGaP/GaAs heterointerfaces grown by metalorganic chemical vapor deposition

    SciTech Connect (OSTI)

    Nittono, T.; Hyuga, F. [NTT System Electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-01 (Japan)] [NTT System Electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-01 (Japan)

    1997-03-01T23:59:59.000Z

    InGaP/GaAs heterointerfaces grown by metalorganic chemical vapor deposition have been characterized by a high-resolution x-ray diffraction analysis of multiple quantum well structures. The flow of AsH{sub 3} to InGaP surface produces an InGaAs-like interfacial layer at the GaAs-on-InGaP interface, indicating P atoms of the InGaP surface are easily replaced by As atoms. The flow of PH{sub 3} to GaAs surface, on the other hand, does not make any detectable interfacial layer, indicating that almost no As atoms of the GaAs surface are replaced by P atoms. It is also found that the flow of trimethylgallium (TMG) to the InGaP surface produces a GaP-like interfacial layer. This interfacial layer is probably formed by the reaction between TMG and excessive P atoms on the InGaP surface or residual PH{sub 3} in the growth chamber. {copyright} {ital 1997 American Institute of Physics.}

  17. Physica B 376377 (2006) 486490 Preferential substitution of Fe on physically equivalent Ga sites in GaN

    E-Print Network [OSTI]

    Nabben, Reinhard

    2006-01-01T23:59:59.000Z

    in GaN W. GehlhoffÃ, D. Azamat1 , U. Haboeck, A. Hoffmann Institute for Solid State Physics, Technical freestanding hydride vapor phase grown GaN have been studied in the X- and Q-band. A complex resonance pattern with C3v symmetry in the wurtzite structure of GaN. Aside from the displacement of their magnetic axis

  18. Superluminescence in Green Emission GaInN/GaN Quantum Well Structures under Pulsed Laser Excitation

    E-Print Network [OSTI]

    Wetzel, Christian M.

    and bulk GaN substrates, respectively. Under intense pulsed photo excitation, we observed strong the same excitation conditions, the blue shift for the m-axis grown structure on bulk GaN substrate is less-plane sapphire substrate and along the non-polar m-axis on m-plane bulk GaN substrate. The frequently used

  19. Composition and Interface Analysis of InGaN/GaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography

    SciTech Connect (OSTI)

    Liu, Fang; Huang, Li; Davis, Robert F.; Porter, Lisa M.; Schreiber, Daniel K.; Kuchibhatla, S. V. N. T.; Shutthanandan, V.; Thevuthasan, Suntharampillai; Preble, Edward; Paskova, Tanya; Evans, K. R.

    2014-09-04T23:59:59.000Z

    In0.20Ga0.80N/GaN multi-quantum wells grown on [0001]-oriented GaN substrates with and without an InGaN buffer layer were characterized using three-dimensional atom probe tomography. In all samples, the upper interfaces of the QWs were slightly more diffuse than the lower interfaces. The buffer layers did not affect the roughness of the interfaces within the quantum well structure, a result attributed to planarization of the surface of the 1st GaN barrier layer which had an average root-mean-square roughness of 0.177 nm. The In and Ga distributions within the MQWs followed the expected distributions for a random alloy with no indications of In clustering.

  20. Point defect balance in epitaxial GaSb

    SciTech Connect (OSTI)

    Segercrantz, N., E-mail: natalie.segercrantz@aalto.fi; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FIN-00076 Aalto Espoo (Finland); Song, Y.; Wang, S. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Göteborg (Sweden); State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 865 Changning Road, Shanghai 200050 (China)

    2014-08-25T23:59:59.000Z

    Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

  1. Room-temperature cw operation of InGaAsP/InGaP lasers at 727 nm grown on GaAs substrates by liquid phase epitaxy

    SciTech Connect (OSTI)

    Wakao, K.; Nishi, H.; Kusunoki, T.; Isozumi, S.; Ohsaka, S.

    1984-06-01T23:59:59.000Z

    InGaAsP/InGaP lasers emitting at 724--727 nm have been fabricated on GaAs substrates using liquid phase epitaxy. The threshold current is reduced to 8 kA/cm/sup 2/ by thinning the active layer. Room-temperature cw operation is achieved for the first time in the lasing wavelength range below 760 nm in this quaternary system.

  2. Self-assembled In0.5Ga0.5As quantum dots on GaP Yuncheng Song,a

    E-Print Network [OSTI]

    Haller, Gary L.

    SAQDs . Several groups have investigated the growth of both InP and In-rich InGaP SAQDs on GaP.7­12 Most temperature operation of vis- ible light emitting diodes LEDs using InP/GaP and InGaP/ GaP SAQDs, respectively

  3. Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns

    E-Print Network [OSTI]

    Jahns, Jürgen

    Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J spreading in a mesa-structure GaN-based LED grown on an insulating or semi-insulating substrate. (b. Jahns Current crowding in mesa-structure GaInN/GaN light-emitting diodes (LEDs) grown on insulating

  4. Gas-source molecular beam epitaxial growth and characterization of the (Al,In,Ga)NP/GaP material system and Its applications to light-emitting diodes

    E-Print Network [OSTI]

    Odnoblyudov, Vladimir

    2006-01-01T23:59:59.000Z

    ? G, Kcal/mol GaP GaN AlN o Substrate temperature, C Figurenm-thick GaN 0.006 P 0.994 layer on substrate temperature.substrate temperature for Reactions formation of AlP, GaP, GaN and

  5. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 51, NO. 2, FEBRUARY 2003 653 AlGaN/GaN HFET Power Amplifier Integrated With

    E-Print Network [OSTI]

    Itoh, Tatsuo

    the first demonstration of a GaN-based HFET was done on a sapphire substrate in 1993 [1]­[3]. This is due crystal quality compared to that of the sapphire substrate. Thanks to steadfast progress in AlGaN/GaN HFETIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 51, NO. 2, FEBRUARY 2003 653 AlGaN/GaN

  6. Tunable THz plasmon resonances in InGaAs/InP HEMT R. E. Peale*a

    E-Print Network [OSTI]

    Peale, Robert E.

    , high ns, and small m*. A variety of materials systems such as GaAs/AlGaAs [3], InGaP/InGaAs/GaAs [4

  7. Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    fabricated on freestanding GaN substrates T. Koyama and T.on freestanding m-plane GaN substrates. Although the ? inton the freestanding GaN substrate. cause the current was

  8. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12T23:59:59.000Z

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  9. Influence of Ga content on the structure and anomalous Hall effect of Fe{sub 1?x}Ga{sub x} thin films on GaSb(100)

    SciTech Connect (OSTI)

    Anh Tuan, Duong; Shin, Yooleemi; Viet Cuong, Tran; Cho, Sunglae, E-mail: slcho@ulsan.ac.kr [Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Phan, The-Long [Department of Physics, Chungbuk National University, Cheongju 361-763 (Korea, Republic of)

    2014-05-07T23:59:59.000Z

    The Fe{sub 1?x}Ga{sub x} thin films (x?=?0.4, 0.5) have been grown on GaSb(100) substrate using molecular beam epitaxy. An epitaxial film with bcc ?-Fe crystal structure (A2) is observed in Fe{sub 0.6}Ga{sub 0.4} film, while an impure Fe{sub 3}Ga phase with DO{sub 3} structure is appeared in Fe{sub 0.5}Ga{sub 0.5} film. The saturated magnetizations at room temperature are observed to be 570?emu/cm{sup 3} and 180?emu/cm{sup 3} and the coercivities to be 170 and 364?Oe for Fe{sub 0.6}Ga{sub 0.4} and Fe{sub 0.5}Ga{sub 0.5}, respectively. A hysteresis trend in Hall resistance vs. magnetic field is observed for Fe{sub 0.5}Ga{sub 0.5} film. However, there is a weak hysteresis noticed in Fe{sub 0.4}Ga{sub 0.6} thin film.

  10. Catastrophic degradation of InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy

    SciTech Connect (OSTI)

    Ueda, O.; Wakao, K.; Komiya, S.; Yamaguchi, A.; Isozumi, S.; Umebu, I.

    1985-12-01T23:59:59.000Z

    Catastrophically degraded InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy, emitting at 727 and 810 nm are investigated by photoluminescence topography, scanning electron microscopy, transmission electron microscopy, and energy dispersive x-ray spectroscopy. The degradation is mainly due to catastrophic optical damage at the facet, i.e., development of <110> dark-line defects from the facet, and rarely due to catastrophic optical damage at some defects, i.e., development of <110> dark-line defects from the defects inside the stripe region. These <110> dark-line defects correspond to complicated dislocation networks connected with dark knots, and are quite similar to those observed in catastrophically degraded GaAlAs/GaAs double-heterostructure lasers. The degradation characteristics of the InGaAsP/InGaP double-heterostructure lasers are rather similar to those in GaAlAs/GaAs double-heterostructure lasers concerning the catastrophic degradation.

  11. Federal Facility Agreement Annual Progress Report for Fiscal Year 1999 Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Bechtel Jacobs Company LLC

    2000-01-01T23:59:59.000Z

    The U.S. Department of Energy-Oak Ridge Operations (DOE-ORO) EM Program adopted a watershed approach for performing Remedial Investigations (RIs) and characterizations for ORR because it is an effective system for determining the best methods for protecting and restoring aquatic ecosystems and protecting human health. The basic concept is that water quality and ecosystem problems are best solved at the watershed level rather than at the individual water-body or discharger level. The watershed approach requires consideration of all environmental concerns, including needs to protect public health, critical habitats such as wetlands, biological integrity, and surface and ground waters. The watershed approach provides an improved basis for management decisions concerning contaminant sources and containment. It allows more direct focus by stakeholders on achieving ecological goals and water quality standards rather than a measurement of program activities based on numbers of permits or samples. The watershed approach allows better management strategies for investigations, therefore maximizing the utilization of scarce resources. Feasibility studies (FSs) evaluate various alternatives in terms of environmental standards, the protection of human health and the environment, and the costs of implementation to find the optimum solution among them. Society has to decide how much it is willing to spend to meet the standards and to be protective. Conducting FSs is the process of trading off those criteria to pick that optimum point that society wants to achieve. Performing this analysis at the watershed scale allows those trade-offs to be made meaningfully. In addition, a Land Use Control Assurance Plan for the ORR was prepared to identify the strategy for assuring the long-term effectiveness of land use controls. These land use controls will be relied upon to protect human health and the environment at areas of the ORR undergoing remediation pursuant to the Comprehensive Environmental Response, Compensation, and Liability Act and/or the Resource Conservation and Recovery Act. This plan will be implemented by means of a Memorandum of Understanding (MOU) incorporating its terms with the United States EPA and TDEC. The majority of projects described in this report are grouped into five watersheds. They are the East Tennessee Technical Park (ETTP) Watershed (formerly the K-25 Site), the Melton Valley (MV) and Bethel Valley (BV) Watersheds at the Oak Ridge National Laboratory (ORNL), and the Bear Creek Valley (BCV) and Upper East Fork Poplar Creek (UEFPC) Watersheds at the Y-12 Plant.

  12. Mercury Issues and Complexities in Oak Ridge, Tennessee; Redefining the Conceptual Model - 12277

    SciTech Connect (OSTI)

    Peterson, Mark; Southworth, George; Watson, David [Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Looney, Brian; Eddy-Dilek, Carol [Savannah River National Laboratory, Aiken, South Carolina 29808 (United States); Ketelle, Richard [Restoration Services Inc., Oak Ridge, Tennessee 37831 (United States)

    2012-07-01T23:59:59.000Z

    Releases of mercury from an industrial facility in Oak Ridge, Tennessee in the 1950's and early 1960's resulted in contamination of soil and groundwater within the facility, as well as downstream surface waters. Remediation efforts, which began in the 1980's, have decreased waterborne mercury concentrations near the facility, but elevated levels of mercury remain in the soil, sediment, water, and biota. Widespread distribution of mercury sources and complex mercury transport pathways are some of many challenges at the site. For effective environmental management and closure decision making relative to mercury contamination at the facilities, an up-to-date conceptual model of mercury source areas, processes, likely flow paths, and flux was deemed necessary. Recent facility and reconfiguration efforts, site characterizations, remedial actions, and research are facilitating the collection of new mercury data in Oak Ridge. To develop the current model, a multi-organizational team reviewed existing conceptual models from a variety of sources, consolidated historical data and source information, gathered input from local experts with extensive site knowledge, and used recently collected mercury data from a variety of sampling programs. The developed site conceptual model indicates that the nature and extent of mercury concentration and contaminant flux has significantly changed in the ten years since flux-based conceptual models were used for previous remedial action decisions. A new water treatment system has effectively reduced mercury inputs to the creek and is removing substantially greater quantities of mercury from groundwater than was expected. However, fish concentrations in downstream waters have not responded to decreased water concentrations in the stream. Flux from one large out-fall at the creek's headwaters appears to be a greater percentage of the overall flux leaving the site than previous years, albeit year to year variation in flux is large, and the many small sources of mercury identified in the model may also be important if the goal is to reach very low mercury levels in stream water and fish. The conceptual model is a key reference in helping to prioritize future remedial actions, defining future monitoring, conducting numerical modeling efforts, and evaluating research needs. (authors)

  13. Wind Regimes in Complex Terrain of the Great Valley of Eastern Tennessee

    SciTech Connect (OSTI)

    Birdwell, Kevin R [ORNL

    2011-05-01T23:59:59.000Z

    This research was designed to provide an understanding of physical wind mechanisms within the complex terrain of the Great Valley of Eastern Tennessee to assess the impacts of regional air flow with regard to synoptic and mesoscale weather changes, wind direction shifts, and air quality. Meteorological data from 2008 2009 were analyzed from 13 meteorological sites along with associated upper level data. Up to 15 ancillary sites were used for reference. Two-step complete linkage and K-means cluster analyses, synoptic weather studies, and ambient meteorological comparisons were performed to generate hourly wind classifications. These wind regimes revealed seasonal variations of underlying physical wind mechanisms (forced channeled, vertically coupled, pressure-driven, and thermally-driven winds). Synoptic and ambient meteorological analysis (mixing depth, pressure gradient, pressure gradient ratio, atmospheric and surface stability) suggested up to 93% accuracy for the clustered results. Probabilistic prediction schemes of wind flow and wind class change were developed through characterization of flow change data and wind class succession. Data analysis revealed that wind flow in the Great Valley was dominated by forced channeled winds (45 67%) and vertically coupled flow (22 38%). Down-valley pressure-driven and thermally-driven winds also played significant roles (0 17% and 2 20%, respectively), usually accompanied by convergent wind patterns (15 20%) and large wind direction shifts, especially in the Central/Upper Great Valley. The behavior of most wind regimes was associated with detectable pressure differences between the Lower and Upper Great Valley. Mixing depth and synoptic pressure gradients were significant contributors to wind pattern behavior. Up to 15 wind classes and 10 sub-classes were identified in the Central Great Valley with 67 joined classes for the Great Valley at-large. Two-thirds of Great Valley at-large flow was defined by 12 classes. Winds flowed on-axis only 40% of the time. The Great Smoky Mountains helped create down-valley pressure-driven winds, downslope mountain breezes, and divergent air flow. The Cumberland Mountains and Plateau were associated with wind speed reductions in the Central Great Valley, Emory Gap Flow, weak thermally-driven winds, and northwesterly down sloping. Ridge-and-valley terrain enhanced wind direction reversals, pressure-driven winds, as well as locally and regionally produced thermally-driven flow.

  14. Dynamics of thermalization in GaInN/GaN quantum wells grown on ammonothermal GaN

    SciTech Connect (OSTI)

    Binder, J.; Korona, K. P.; Wysmo?ek, A.; Kami?ska, M. [Faculty of Physics, University of Warsaw, ul. Hoza 69, 00-681 Warsaw (Poland); Köhler, K.; Kirste, L.; Ambacher, O. [Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg (Germany); Zaj?c, M.; Dwili?ski, R. [AMMONO SA, Czerwonego Krzy?a 2/31, 00-377 Warsaw (Poland)

    2013-12-14T23:59:59.000Z

    In this work, we present measurements of the dynamics of photoexcited carriers in GaInN/GaN quantum wells (QWs) grown on ammonothermal GaN, especially thermalization and recombination rates. Emission properties were measured by time-resolved photoluminescence (PL) and electroluminescence spectroscopy. Due to the use of high quality homoepitaxial material, we were able to obtain very valuable data on carrier thermalization. The temperature dependence of the QW energy observed in PL shows characteristic S-shape with a step of about 10?meV. Such a behavior (related to thermalization and localization at potential fluctuations) is often reported for QWs; but in our samples, the effect is smaller than in heteroepitaxial InGaN/GaN QWs due to lower potential fluctuation in our material. Absorption properties were studied by photocurrent spectroscopy measurements. A comparison of emission and absorption spectra revealed a shift in energy of about 60?meV. Contrary to PL, the QW energy observed in absorption decreases monotonically with temperature, which can be described by a Bose-like dependence E(T)?=?E(0) ? ?/(exp(?/T) ? 1), with parameters ??=?(0.11?±?0.01) eV, ??=?(355?±?20)?K, or by a Varshni dependence with coefficients ??=?(10?±?3) × 10{sup ?4}?eV/K and ??=?(1500?±?500) K. Taking into account absorption and emission, the fluctuation amplitude (according to Eliseev theory) was ??=?14?meV. The time resolved PL revealed that in a short period (<1?ns) after excitation, the PL peaks were broadened because of the thermal distribution of carriers. We interpreted this distribution in terms of quasi-temperature (T{sub q}) of the carriers. The initial T{sub q} was of the order of 500?K. The thermalization led to a fast decrease of T{sub q}. The obtained cooling time in the QW was ?{sub C}?=?0.3?ns, which was faster than the observed recombination time ?{sub R}?=?2.2?ns (at 4?K)

  15. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure

    SciTech Connect (OSTI)

    Barbosa, B. G.; Arakaki, H.; Souza, C. A. de; Pusep, Yu. A. [Instituto de Fisica de São Carlos, Universidade de São Paulo, 13560-970 Sao Carlos, SP (Brazil)

    2014-03-21T23:59:59.000Z

    Photoluminescence was studied in GaAs/AlGaAs nanowires (NWs) with different radial heterostructures. We demonstrated that manipulation of the emission energy may be achieved by appropriate choice of the shell structure. The emission at highest energy is generated in the NWs with tunneling thin AlGaAs inner shell and thin GaAs outer shell due to recombination of the photoexcited electrons confined in the outer shell with the holes in the core. Lower energy emission was shown to occur in the NWs with thick outer shell grown in the form of a short-period GaAs/AlGaAs multiple quantum well structure. In this case, the tunneling probability through the multiple quantum wells controls the energy emitted by the NWs. The doping of core results in dominated low energy emission from the GaAs core.

  16. Environmental Survey Report for the ETTP: Environmental Management Waste Management Facility (EMWMF) Haul Road Corridor, Oak Ridge, Tennessee

    SciTech Connect (OSTI)

    Peterson, M.J.

    2005-12-20T23:59:59.000Z

    This report summarizes the results of environmental surveys conducted within the corridor of a temporary haul road (''Haul Road'') to be constructed from East Tennessee Technology Park (ETTP) to the Environmental Management Waste Management Facility (EMWMF) located just west of the Y-12 National Security Complex (Y-12). Environmental surveys were conducted by natural resource experts at Oak Ridge National Laboratory who routinely assess the significance of various project activities on the Oak Ridge Reservation (ORR). ORNL assistance to the Haul Road Project included environmental assessments necessary to determine the best route for minimizing impacts to sensitive resources such as wetlands or rare plants. Once the final route was chosen, environmental surveys were conducted within the corridor to evaluate the impacts to sensitive resources that could not be avoided. The final Haul Road route follows established roads and a power-line corridor to the extent possible (Fig. 1). Detailed explanation regarding the purpose of the Haul Road and the regulatory context associated with its construction is provided in at least two major documents and consequently is not presented here: (1) Explanation of Significant Differences for the Record of Decision for the Disposal of Oak Ridge Reservation Comprehensive Environmental Response, Compensation, and Liability Act of 1980 Waste, Oak Ridge, Tennessee (January 2005, DOE/OR/01-2194&D2), and (2) Environmental Monitoring Plan for The ETTP to EMWMF Haul Road for the Disposal of Oak Ridge Reservation Comprehensive Environmental Response, Compensation, and Liability Act of 1980 Waste, Oak Ridge, Tennessee (April 2005, BJC/OR-2152). The focus of this report is a description of the sensitive resources to be impacted by Haul Road construction. Following a short description of the methods used for the environmental surveys, results and observations are presented in the following subsections: (1) General description of the affected environment; (2) Rare plants and vegetation assemblages; (3) Rare wildlife and their habitat; (4) Rare aquatic species; and (5) Wetlands/Floodplains. A summary of project actions taken or planned in order to avoid, minimize, or mitigate the environmental impacts associated with this project are summarized in the conclusion section of this report.

  17. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01T23:59:59.000Z

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  18. Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and reflection high-energy electron diffraction

    E-Print Network [OSTI]

    Brown, J S; Koblmuller, G; Wu, F; Averbeck, R; Riechert, H; Speck, J S

    2006-01-01T23:59:59.000Z

    PA-MBE GaN growth conditions, with substrate temperatures ofthe GaN surface roughness evolution, substrate vicinality,vapor and substrate temperature could form the basis for GaN

  19. INDEPENDENT VERIFICATION SURVEY REPORT FOR EXPOSURE UNITS Z2-24, Z2-31, Z2-32, AND Z2-36 IN ZONE 2 OF THE EAST TENNESSEE TECHNOLOGY PARK OAK RIDGE, TENNESSEE

    SciTech Connect (OSTI)

    none,

    2013-10-10T23:59:59.000Z

    The U.S. Department of Energy (DOE) Oak Ridge Office of Environmental Management selected Oak Ridge Associated Universities (ORAU), through the Oak Ridge Institute for Science and Education (ORISE) contract, to perform independent verification (IV) at Zone 2 of the East Tennessee Technology Park (ETTP) in Oak Ridge, Tennessee. ORAU has concluded IV surveys, per the project-specific plan (PSP) (ORAU 2013a) covering exposure units (EUs) Z2-24, -31, -32, and -36. The objective of this effort was to verify the following. • Target EUs comply with requirements in the Zone 2 Record of Decision (ROD) (DOE 2005), as implemented by using the dynamic verification strategy presented in the dynamic work plan (DWP) (BJC 2007) • Commitments in the DWP were adequately implemented, as verified via IV surveys and soil sampling The Zone 2 ROD establishes maximum remediation level (RLmax) values and average RL (RLavg) values for the primary contaminants of concern (COCs) U-234, U-235, U-238, Cs-137, Np-237, Ra-226, Th-232, arsenic, mercury, and polychlorinated biphenyls (PCBs). Table 1.1 lists Zone 2 COCs with associated RLs. Additional radiological and chemical contaminants were also identified during past characterization and monitoring actions, though the ROD does not present RLs for these potential contaminants. IV activities focused on the identification and quantification of ROD-specific COCs in surface soils, but also generated data for other analytes to support future decisions. ORAU personnel also reviewed EU-specific phased construction completion reports (PCCRs) to focus IV activities and identify potential judgmental sample locations, if any.

  20. Refractive index of erbium doped GaN thin films

    SciTech Connect (OSTI)

    Alajlouni, S.; Sun, Z. Y.; Li, J.; Lin, J. Y.; Jiang, H. X., E-mail: hx.jiang@ttu.edu [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States); Zavada, J. M. [Department of Electrical and Computer Engineering, Polytechnic Institute of New York University, Brooklyn, New York 11201 (United States)

    2014-08-25T23:59:59.000Z

    GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540?nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those obtained by conventional growth method of continuous flow of reaction precursors. X-ray diffraction rocking curve linewidths of less than 300?arc sec were achieved for the GaN (0002) diffraction peak, which is comparable to the typical results of undoped high quality GaN epilayers and represents a major improvement over previously reported results for GaN:Er. Spectroscopic ellipsometry was used to determine the refractive index of the GaN:Er epilayers in the 1540?nm wavelength window and a linear dependence on Er concentration was found. The observed refractive index increase with Er incorporation and the improved crystalline quality of the GaN:Er epilayers indicate that low loss GaN:Er optical waveguiding structures are feasible.