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Sample records for ga proposed action

  1. Environmental Assessment - Proposed Actions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    availability of Waste Isolation Pilot Plant (WIPP) facilities and infrastructure to scientists who wish to conduct experiments there. DOE would allow these experiments if they can be conducted without interfering with the WIPP's primary transuranic waste disposal mission and if they reflect contemporary budget priorities. This fact sheet presents questions and answers about the proposed action and its alternative. The deep geologic repository at the WIPP could provide a favorable environment for

  2. Categorical Exclusion Determination Form Proposed Action Title...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Proposed Action Title: (0473-1597) Smart Wire Grid, Inc. - Distributed Power Flow Contro l Using Smart Wires for Energy Routing Program or Field Office: Advanced Research Projects ...

  3. Implementation Proposal for the National Action Plan on Demand...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Implementation Proposal for the National Action Plan on DemandResponse - July 2011 Implementation Proposal for the National Action Plan on Demand Response - July 2011 Report to ...

  4. N Springs expedited response action proposal

    SciTech Connect (OSTI)

    Not Available

    1994-01-01

    Since signing the Hanford Federal Facility Agreement and Consent Order (Tri-Party Agreement) in 1989, the parties to the agreement have recognized the need to modify the approach to conducting investigations, studies, and cleanup actions at Hanford. To implement this approach, the parties have jointly developed the Hanford Past-Practice Strategy. The strategy defines a non-time-critical expedited response action (ERA) as a response action ``needed to abate a threat to human health or welfare or the environment where sufficient time exists for formal planning prior to initiation of response. In accordance with the past-practice strategy, DOE proposes to conduct an ERA at the N Springs, located in the Hanford 100 N Area, to substantially reduce the strontium-90 transport into the river through the groundwater pathway. The purpose of this ERA proposal is to provide sufficient information to select a preferred alternative at N Springs. The nature of an ERA requires that alternatives developed for the ERA be field ready; therefore, all the technologies proposed for the ERA should be capable of addressing the circumstances at N Springs. A comparison of these alternatives is made based on protectiveness, cost, technical feasibility, and institutional considerations to arrive at a preferred alternative. Following the selection of an alternative, a design phase will be conducted; the design phase will include a detailed look at design parameters, performance specifications, and costs of the selected alternative. Testing will be conducted as required to generate design data.

  5. Chapter 2 - Proposed Action and Alternatives

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Chapter 19 - Small Business Programs Chapter 19 - Small Business Programs 19_Small Business Programs_0.pdf (311.5 KB) AG19 1.pdf (29.07 KB) Department of Energy Partnership Agreement.pdf (3.21 MB) More Documents & Publications Acquisition Guide Chapter 19 Update OPAM Policy Acquisition Guides Guidance of the Department of Energy Subcontracting Program

    2-1 CHAPTER 2 PROPOSED ACTION AND ALTERNATIVES The WIPP facility, in addition to serving its primary mission as a TRU waste disposal site,

  6. ACTION DESCRIPTION MEMORANDUM PROPOSED DECONTAMINATION OF THREE...

    Office of Legacy Management (LM)

    ... of about 400 ha (1000 acres) and is a residential community of more than 45,000 people, ... As part of FUSRAP, the U.S. Department of Energy, Oak Ridge Operations, is proposing to ...

  7. CATEGORICAL EXCLUSION (CX) DETERMINATION BRIEF DESCRIPTION OF PROPOSED ACTION:

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    'u ", lt~Fs::::N CATEGORICAL EXCLUSION (CX) DETERMINATION BRIEF DESCRIPTION OF PROPOSED ACTION: Southwestern Power Administration proposes to construct a maintenance garage for heavy vehicles and equipment at the Springfield, Missouri facility. PROPOSED BY: Southwestern Power Administration- U.S. Dept. of Energy DATE: December 7,2010 NUMBERS AND TITLES OF THE CATEGORICAL EXCLUSIONS BEING APPLIED: 10 CFR 1021, Appendix B to Subpart D, Part B1.15- Siting, construction or modification of

  8. CATEGORICAL EXCLUSION (CX) DETERMINATION BRIEF DESCRIPTION OF PROPOSED ACTION:

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    CATEGORICAL EXCLUSION (CX) DETERMINATION BRIEF DESCRIPTION OF PROPOSED ACTION: Southwestern Power Administration (Southwestern) proposes to obtain an easement for an existing access road which is located in Carroll County, Arkansas. The easement will serve to facilitate Southwestern's electrical utility vehicles accessing electrical transmission line 3008, near structure 33, in Carroll County, Arkansas. PROPOSED BY: Southwestern Power Administration- U.S. Dept. of Energy DATE: January 28,2011

  9. The NEPA threshold question revisited: Proposed'' actions and continuing'' activities

    SciTech Connect (OSTI)

    Wolff, T.A. ); Hansen, R.P. )

    1993-01-01

    The National Environmental Policy Act (NEPA) requires Federal agencies to include a detailed statement'' in every recommendation or report on proposals'' for major Federal actions significantly affecting the quality of the human environment.'' Unless the three elements of a proposal are present (major, federal, and action), preparation of a detailed statement is not required. This paper addresses the practical decision-making dilemma that attends determinations of what types of Federal activities meet the NEPA threshold test under what kinds of varying circumstances. The authors' experience with the US Dept. of Energy (DOE) NEPA documentation is used to discuss how decisions may be made to determine whether a proposed action qualifies for a categorical exclusion'' or whether it requires preparation of an environmental assessment (EA) or an environmental impact statement (EIS). The concept of new'' actions versus continuing'' actions which may be bounded'' by previous NEPA documentation is also discussed. A dichotomous key for separating or combining Federal action'' candidates for different levels of NEPA documentation is provided. Leading court opinions on the threshold question and related issues are discussed in lay terms.

  10. CEQ Guidance on the Application of NEPA to Proposed Federal Actions...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    States with Transboundary Effects CEQ Guidance on the Application of NEPA to Proposed Federal Actions in the United States with Transboundary Effects CEQ Guidance on the ...

  11. Lasing action and extraordinary reduction in long radiative lifetime of type-II GaSb/GaAs quantum dots using circular photonic crystal nanocavity

    SciTech Connect (OSTI)

    Hsu, Kung-Shu; Chang, Shu-Wei; Hung, Wei-Chun; Chang, Chih-Chi; Lin, Wei-Hsun; Lin, Shih-Yen; Shih, Min-Hsiung; Lee, Po-Tsung; Chang, Yia-Chung

    2015-08-31

    We demonstrated the lasing action and remarkable reduction in long radiative lifetimes of type-II GaSb/GaAs quantum dots using a circular photonic-crystal nano-cavity with high Purcell factors. The associated enhancement in carrier recombination was surprisingly high and could even surpass type-I counterparts in similar conditions. These phenomena reveal that the type-II sample exhibited extremely low nonradiative recombination so that weak radiative transitions were more dominant than expected. The results indicate that type-II nanostructures may be advantageous for applications which require controllable radiative transitions but low nonradiative depletions.

  12. Title 40 CFR 1502.14 Alternatives Including the Proposed Action...

    Open Energy Info (EERE)

    .14 Alternatives Including the Proposed Action Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- Federal RegulationFederal Regulation: Title 40 CFR...

  13. Categorical Exclusion Determination Form Proposed Action Title: (0474-1528) Ideal Power Converters Inc. -

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    nt n rgy *Submitby£-mail Categorical Exclusion Determination Form Proposed Action Title: (0474-1528) Ideal Power Converters Inc. - Dual Bi-Directional Silicon IGBTs Modules Enables Breakthrough PV Inverter Using Current-Modulation Topology Program or Field Office: Advanced Research Projects Agency - Energy LocationCs) CCitY/County/State): California, New York, Virginia, Texas Proposed Action Description: Funding will support development of a low-cost, high-efficiency 100 kW power inverter to

  14. Chromium Project Notice of Proposed Floodplain Action Public Comment Period Closes November 20th,

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Chromium Project Notice of Proposed Floodplain Action Public Comment Period Closes November 20th, 2015 The Department of Energy Environmental Management Los Alamos Field Office has prepared a Draft Environmental Assessment for the Chromium Plume Control Interim Measure and Plume-Center Characterization at the Los Alamos National Laboratory (LANL). The proposed action may include well pad and access road installation and maintenance, piezometer placement, and pipeline placement in the 100-year

  15. Proposed Action Title: U.S. Department of Energy Southwestern Power Administration

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Storm Shelter Construction Project Program or Field Office: Southwestern Power Administration Location(s) (City/County/State): Gore/Muskogee/Oklahoma; Jonesboro/Craighead/ Arkansas SWPAF 450.4 (Rev. 05/14) Proposed Action Description: Southwestern Power Administration proposes to construct aboveground storm shelters at at the Gore and Jonesboro Maintenance Facilities. Categorical Exclusion(s) Applied: 10 CFR 1021, Appendix 8 to Subpart D, Part 82.3. Installation of, or improvements to, equipment

  16. Proposed Action Title: U.S. Department of Energy Southwestern Power Administration

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transmission Line Segment Modification, Line 3004, Structures 39, 39A, and 40 Program or Field Office: Southwestern Power Administration Location(s) (City/County/State): Springfield, Christian County, Missouri SWPA F450.4 (Rev. 2/16) Proposed Action Description: Southwestern Power Administration proposes to modify and relocate a small seqment of transmission line to accommodate and provide safety clearance for a retail development project in an urbanized section of Springfield, Missouri.

  17. Appliance Standard Program - The FY 2003 Priority -Setting Summary Report and Actions Proposed

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Appliance Standards Program The FY 2003 Priority- Setting Summary Report and Actions Proposed Date: August 22, 2002 Table of Contents i EXECUTIVE SUMMARY.............................................................................................. iv 1 Energy Conservation Program - Product Prioritization Process.......1-1 1.1 Background on Appliance Standards Program........................................... 1-1 1.2 DOE Authority to Add Products

  18. Proposed decision document, other contamination sources, interim response action, South Tank Farm Plume

    SciTech Connect (OSTI)

    Not Available

    1990-08-23

    The South Tank Farm Plume (STFP) is listed under the 'Remediation of Other Contamination Sources' Interim Response Action (IRA) sites under the Final Technical Program Plan FY88-FY92 and the Federal Facility Agreement. The process and guidelines used to assess alternatives, produce this Proposed Decision Document, and implement this IRA are specified in and conducted in accordance with the Federal Facility Agreement. The purposes of the Proposed Decision Document for Other Contamination Sources IRAs are to: (a) state the objective of the IRA; (b) discuss Interim Response Action alternatives, if any, that were considered; (c) provide the rationale for the alternative selected; (d) present the final ARAR decision; (e) summarize the significant comments received regarding the IRA and responses to those comments; and (f) establish an IRA Deadline for completion of the IRA, if appropriate. Each of the above mentioned issues is addressed in this document.

  19. Environmental Assessment for Conducting Astrophysics and Other Basic Science Experiments - Chapter 2 Proposed Action and Alternatives

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2-1 CHAPTER 2 PROPOSED ACTION AND ALTERNATIVES Some types of experiments are best (or only) performed deep underground. For this reason, scientists have considered WIPP as a potential site for these types of experiments and have sought permission from DOE to conduct several types of experiments there. As an example, astrophysicists are searching for very small particles with no charge called neutrinos. These particles are so small that they typically pass through the Earth. The only way to

  20. Operable Unit 3: Proposed Plan/Environmental Assessment for interim remedial action

    SciTech Connect (OSTI)

    Not Available

    1993-12-01

    This document presents a Proposed Plan and an Environmental Assessment for an interim remedial action to be undertaken by the US Department of Energy (DOE) within Operable Unit 3 (OU3) at the Fernald Environmental Management Project (FEMP). This proposed plan provides site background information, describes the remedial alternatives being considered, presents a comparative evaluation of the alternatives and a rationnale for the identification of DOE`s preferred alternative, evaluates the potential environmental and public health effects associated with the alternatives, and outlines the public`s role in helping DOE and the EPA to make the final decision on a remedy.

  1. Proposed measurement of spin currents in a GaAs crystal using the electro-optical Pockels effect

    SciTech Connect (OSTI)

    Zhang, Xingchu; Zheng, Yongjun; She, Weilong

    2014-07-14

    A new method for measuring spin currents is proposed, based on the linear electro-optic (Pockels) effect caused by the additional second-order nonlinear electric susceptibility (electro-optic tensor) generated by the spin currents. The non-zero elements of electro-optic tensor induced by spin currents in GaAs crystal are calculated, and the wave coupling theory of linear electro-optic effect is used to analyze the polarization change of a probe beam. The numerical results show that, for a linearly polarized probe beam with a frequency close to the band gap of GaAs crystal, its polarization rotation can be as large as 14 μrad under an applied electric field of about 350 V/mm. This effect should offer an alternative detection method for spintronics.

  2. DOE and FERC Jointly Submit Implementation Proposal for The National Action Plan on Demand Response to Congress

    Office of Energy Efficiency and Renewable Energy (EERE)

    The U.S. Department of Energy and the Federal Energy Regulatory Commission (FERC) jointly submitted to Congress a required “Implementation Proposal for The National Action Plan on Demand Response.”

  3. Site Rehabilitation Completion Report with No Further Action Proposal for the Northeast Site

    SciTech Connect (OSTI)

    Daniel, Joe; Tabor, Charles; Survochak, Scott

    2013-05-01

    The purpose of this Site Rehabilitation Completion Report is to present the post-active-remediation monitoring results for the Northeast Site and to propose No Further Action with Controls. This document includes information required by Chapter 62-780.750(4)(d), 62-780.750(6), and 62-780.600(8)(a)27 Florida Administrative Code (F.A.C.). The Closure Monitoring Plan for the Northeast Site and 4.5 Acre Site (DOE 2009a) describes the approach for post-active-remediation monitoring. The Young - Rainey Science, Technology, and Research Center (STAR Center) is a former U.S. Department of Energy (DOE) facility constructed in the mid-1950s. The 99-acre STAR Center is located in Largo, Florida. The Northeast Site is located in the northeast corner of the STAR Center. The Northeast Site meets all the requirements for an RMO II closure—No Further Action with Controls. DOE is nearing completion of a restrictive covenant for the Northeast Site. DOE has completed post-active-remediation monitoring at the Northeast Site as of September 2012. No additional monitoring will be conducted.

  4. Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposals Sign In About | Careers | Contact | Investors | bpa.gov Search Doing Business Expand Doing Business Customer Involvement Expand Customer Involvement Reports & Tools...

  5. Finding of no significant impact proposed corrective action for the Northeast Site at the Pinellas Plant in Largo, Florida

    SciTech Connect (OSTI)

    1995-06-01

    The U.S. Department of Energy (DOE) has prepared an Environmental Assessment (EA) (DOE/EA-0976) of the proposed corrective action for the Northeast Site at the Pinellas Plant in Largo, Florida. The Northeast Site contains contaminated groundwater that would be removed, treated, and discharged to the Pinellas County Sewer System. Based on the analyses in the EA, the DOE has determined that the proposed action is not a major Federal action significantly affecting the quality of the human environment, within the meaning of the National Environmental Policy Act of 1969 (NEPA), 42 U.S.C.4321 et.seq. Therefore, the preparation of an environmental impact statement is not required and the DOE is issuing this Finding of No Significant Impact (FONSI).

  6. Proposed

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposed Settlement for Hanford Cleanup U.S. Department of Energy ● Washington State Department of Ecology * U.S. Environmental Protection Agency What's this proposed settlement about? Public Comment The Tri-Party Agreement agencies want your feedback. The public comment period is from October 1 through December 11, 2009. These new commitments would address important activities that are needed to protect human health and the environment. The settlement will impose a new, enforceable and

  7. Guidance on the Application of NEPA to Proposed Federal Actions in the United States with Transboundary Effects (CEQ, 1997)

    Broader source: Energy.gov [DOE]

    The purpose of this guidance is to clarify the applicability of the National Environmental Policy Act (NEPA) to proposed federal actions in the United States, including its territories and possessions, that may have transboundary effects extending across the border and affecting another country's environment. While the guidance arises in the context of negotiations undertaken with the governments of Mexico and Canada to develop an agreement on transboundary environmental impact assessment in North America, the guidance pertains to all federal agency actions that are normally subject to NEPA, whether covered by an international agreement or not.

  8. CEQ Guidance on the Application of NEPA to Proposed Federal Actions in the United States with Transboundary Effects

    Broader source: Energy.gov [DOE]

    The purpose of this guidance is to clarify the applicability of the National Environmental Policy Act (NEPA) to proposed federal actions in the United States, including its territories and possessions, that may have transboundary effects extending across the border and affecting another country's environment. While the guidance arises in the context of negotiations undertaken with the governments of Mexico and Canada to develop an agreement on transboundary environmental impact assessment in North America, the guidance pertains to all federal agency actions that are normally subject to NEPA, whether covered by an international agreement or not.

  9. Review and analysis of proposed EPA groundwater standards for the UMTRA Project. [Uranium Mill Tailings Remedial Action (UMTRA) Project

    SciTech Connect (OSTI)

    Not Available

    1987-10-01

    The Title I groundwater standards for inactive uranium mill tailings sites, which were promulgated on January 5, 1983, by the US Environmental Protection Agency (EPA) for the Uranium Mill Tailings Remedial Action (UMTRA) Project, were remanded to the EPA on September 3, 1985, by the US Tenth Circuit Court of Appeals. The Court instructed the EPA to compile general groundwater standards for all sites. On September 24, 1987, the EPA published proposed standards in response to the remand. This Summary Report includes an evaluation of the potential effects of the proposed EPA groundwater standards on the UMTRA Project as well as a discussion of the DOE's position on the proposed standards. This report is accompanied by a detailed Technical Report and Appendices which provide supporting information and analyses. This Summary Report results from a study undertaken to: determine the impact of the proposed standards on the UMTRA Project; and recommend provisions for the implementation of the final standards that will minimize adverse impact to the conduct of the UMTRA Project while ensuring protection of human health and the environment. Specifically, the following were considered: the flexibility of the proposed standards; interpretations of the proposed standards; the extent of aquifer restoration that may be required to implement the proposed standards at each site; the costs of aquifer restoration; and design changes necessary to meet the standards.

  10. US Department of Energy response to standards for remedial actions at inactive uranium processing sites: Proposed rule

    SciTech Connect (OSTI)

    Not Available

    1988-01-29

    The Title I groundwater standards for inactive uranium mill tailings sites, which were promulgated on January 5, 1983, by the US Environmental Protection Agency (EPA) for the Uranium Mill Tailings Remedial Action (UMTRA) Project, were remanded to the EPA on September 3, 1985, by the US Tenth Circuit Court of Appeals. The Court instructed the EPA to compile general groundwater standards for all Title I sites. On September 24, 1987, the EPA published proposed standards (52FR36000-36008) in response to the remand. This report includes an evaluation of the potential effects of the proposed EPA groundwater standards on the UMTRA Project, as well as a discussion of the DOE's position on the proposed standards. The report also contains and appendix which provides supporting information and cost analyses. In order to assess the impacts of the proposed EPA standards, this report summarizes the proposed EPA standards in Section 2.0. The next three sections assess the impacts of the three parts of the EPA standards: Subpart A considers disposal sites; Subpart B is concerned with restoration at processing sites; and Subpart C addresses supplemental standards. Section 6.0 integrates previous sections into a recommendations section. Section 7.0 contains the DOE response to questions posed by the EPA in the preamble to the proposed standards. 6 refs., 5 figs., 3 tabs.

  11. Description of Proposed Action

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    contained within the WIPP Land Withdrawal Area as part of ... petroleumnatural gas products that pre-exist in ... the other regulatory requirements set forth above are ...

  12. Proposed mechanism to represent the suppression of dark current density by four orders with low energy light ion (H{sup ?}) implantation in quaternary alloy-capped InAs/GaAs quantum dot infrared photodetectors

    SciTech Connect (OSTI)

    Mandal, A.; Ghadi, H.; Mathur, K.L.; Basu, A.; Subrahmanyam, N.B.V.; Singh, P.; Chakrabarti, S.

    2013-08-01

    Graphical abstract: - Abstract: Here we propose a carrier transport mechanism for low energy H{sup ?} ions implanted InAs/GaAs quantum dot infrared photodetectors supportive of the experimental results obtained. Dark current density suppression of up to four orders was observed in the implanted quantum dot infrared photodetectors, which further demonstrates that they are effectively operational. We concentrated on determining how defect-related material and structural changes attributed to implantation helped in dark current density reduction for InAs/GaAs quantum dot infrared photodetectors. This is the first study to report the electrical carrier transport mechanism of H{sup ?} ion-implanted InAs/GaAs quantum dot infrared photodetectors.

  13. Proposed plan for remedial action for the Groundwater Operable Unit at the Chemical Plant Area of the Weldon Spring Site, Weldon Spring, Missouri

    SciTech Connect (OSTI)

    1999-08-10

    This Proposed Plan addresses the remediation of groundwater contamination at the chemical plant area of the Weldon Spring site in Weldon Spring, Missouri. The site is located approximately 48 km (30 mi) west of St. Louis in St. Charles County . Remedial activities at the site will be conducted in accordance with the Comprehensive Environmental Response, Compensation, and Liability Act (CERCLA). The U.S. Department of Energy (DOE), in conjunction with the U.S. Department of the Army (DA), conducted a joint remedial investigation/feasibility study (RI/FS) to allow for a comprehensive evaluation of groundwater conditions at the Weldon Spring chemical plant area and the Weldon Spring ordnance works area, which is an Army site adjacent to the chemical plant area. Consistent with DOE policy, National Environmental Policy Act (NEPA) values have been incorporated into the CERCLA process. That is, the analysis conducted and presented in the RVFS reports included an evaluation of environmental impacts that is comparable to that performed under NEPA. This Proposed Plan summarizes information about chemical plant area groundwater that is presented in the following documents: (1) The Remedial Investigation (RI), which presents information on the nature and extent of contamination; (2) The Baseline Risk Assessment (BRA), which evaluates impacts to human health and the environment that could occur if no cleanup action of the groundwater were taken (DOE and DA 1997a); and (3) The Feasibility Study (FS) and the Supplemental FS, which develop and evaluate remedial action alternatives for groundwater remediation.

  14. Environmental Assessment for the proposed modification and continued operation of the DIII-D facility

    SciTech Connect (OSTI)

    NONE

    1995-07-01

    The EA evaluates the proposed action of modifying the DIII-D fusion facility and conducting related research activities at the GA San Diego site over 1995-1999 under DOE contract number DE-ACO3-89ER51114. The proposed action is need to advance magnetic fusion research for future generation fusion devices such as ITER and TPX. It was determined that the proposed action is not a major action significantly affecting the quality of the human environment according to NEPA; therefore a finding of no significant impact is made and an environmental impact statement is not required.

  15. Proposal of high efficiency solar cells with closely stacked InAs/In{sub 0.48}Ga{sub 0.52}P quantum dot superlattices: Analysis of polarized absorption characteristics via intermediateband

    SciTech Connect (OSTI)

    Yoshikawa, H. Kotani, T.; Kuzumoto, Y.; Izumi, M.; Tomomura, Y.; Hamaguchi, C.

    2014-07-07

    We present a theoretical study of the electronic structures and polarized absorption properties of quantum dot superlattices (QDSLs) using widegap matrix material, InAs/In{sub 0.48}Ga{sub 0.52}P QDSLs, for realizing intermediateband solar cells (IBSCs) with twostep photonabsorption. The planewave expanded BurtForeman operator ordered 8band kp theory is used for this calculation, where strain effect and piezoelectric effect are taken into account. We find that the absorption spectra of the second transitions of twostep photonabsorption can be shifted to higher energy region by using In{sub 0.48}Ga{sub 0.52}P, which is latticematched material to GaAs substrate, as a matrix material instead of GaAs. We also find that the transverse magnetic polarized absorption spectra in InAs/In{sub 0.48}Ga{sub 0.52}P QDSL with a separate IB from the rest of the conduction minibands can be shifted to higher energy region by decreasing the QD height. As a result, the second transitions of twostep photonabsorption by the sunlight occur efficiently. These results indicate that InAs/In{sub 0.48}Ga{sub 0.52}P QDSLs are suitable material combination of IBSCs toward the realization of ultrahigh efficiency solar cells.

  16. Notice_of_Proposed_Action.pdf

    Office of Legacy Management (LM)

  17. EA-2005: Notice of Proposed Floodplain Action

    Broader source: Energy.gov [DOE]

    Chromium Plume Control Interim Measure and Plume-Center Characterization, Los Alamos National Laboratory, Los Alamos, NM

  18. A hole modulator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2015-02-09

    The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ?332?meV to ?294?meV at 80?A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

  19. Proposed Rules Federal Register

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    5383 Vol. 81, No. 21 Tuesday, February 2, 2016 DEPARTMENT OF ENERGY 10 CFR Part 900 RIN 1901-AB36 Coordination of Federal Authorizations for Electric Transmission Facilities AGENCY: Office of Electricity Delivery and Energy Reliability, Department of Energy. ACTION: Notice of proposed rulemaking. SUMMARY: The Department of Energy (DOE) proposes to amend its regulations for the timely coordination of Federal Authorizations for proposed interstate electric transmission facilities pursuant to

  20. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect (OSTI)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  1. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  2. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  3. RAPIDD Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    by ALS management, appropriate to the proposal. Rapid Access Proposals (RA) A proportion of beam time on some beamlines is reserved to provide rapid access for simple,...

  4. Action Items

    Office of Environmental Management (EM)

    ACTION ITEMS Presentation to the DOE High Level Waste Corporate Board July 29, 2009 Kurt Gerdes Office of Waste Processing DOE-EM Office of Engineering & Technology 2 ACTION ITEMS...

  5. ACTION PLAN

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    -1 ACTION PLAN 1.0 INTRODUCTION 1.1 PURPOSE The purpose of this action plan is to establish the overall plan for hazardous waste permitting, meeting closure and postclosure requirements, and remedial action under the Federal Resource Conservation and Recovery Act (RCRA) and Comprehensive Environmental Response, Compensation, and Liability Act (CERCLA), and the Washington State Hazardous Waste Management Act. All actions required to be taken pursuant to this Agreement shall be taken in accordance

  6. RAPIDD Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    RAPIDD Proposals RAPIDD Proposals Print Tuesday, 21 August 2012 14:41 The combined process for Rapid Access Proposals, Industry, and Director's Discretion (RAPIDD) beam time accommodates users who require limited or rapid access to ALS beam time. There are a number of proposal types that are available on a variety of beamlines, as described below. Log in to ALSHub to submit a RAPIDD proposal. The RAPIDD process is not suitable for users requiring significant beam time for an extended program of

  7. Notes and Action Items

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Notes and Action Items Notes and Action Items ERSUG Action Items from June 1996 meeting at Germantown, MD Get DOE staff on mailers for broadcast of ERSUG issues Responsibility: Kendall and Kitchens Review and comment on ERSUG Proposal to SAC Responsibility: All of ERSUG Comments to Rick Kendall by July 17th email: ra_kendall@pnl.gov Fax : (509) 375-6631 Review and comment on Requirements Document "Greenbook" Responsibility: All of ERSUG Comments to Rick Kendall by August 7th email:

  8. RAPIDD Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    RAPIDD Proposals Print The combined process for Rapid Access Proposals, Industry, and Director's Discretion (RAPIDD) beam time accommodates users who require limited or rapid access to ALS beam time. There are a number of proposal types that are available on a variety of beamlines, as described below. Log in to ALSHub to submit a RAPIDD proposal. The RAPIDD process is not suitable for users requiring significant beam time for an extended program of research or those wanting to perform complex

  9. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Energy 6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA February 8, 2012 EIS-0476: Final Environmental Impact Statement Department of Energy Loan Guarantees for Proposed Units 3 and 4 at the Vogtle Electric Generating Plant, Burke County, GA February 25, 2014 EIS-0476: Record of Decision Department of Energy Loan Guarantees for Proposed Units 3 and 4 at the Vogtle Electric Generating Plant, Burke County, GA

  10. United States Forest Service - Forest Service Schedule of Proposed...

    Open Energy Info (EERE)

    Actions Jump to: navigation, search OpenEI Reference LibraryAdd to library Web Site: United States Forest Service - Forest Service Schedule of Proposed Actions Abstract The...

  11. Corrective Action

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of Corrective Action Complete is demonstrated by one of the following: Eliminate Exposure (11 SMAs, 16 Sites) SMA SITE Submittal Date Document 2M-SMA-2.2 03-003(k) September...

  12. EIS-0389: Mitigation Action Plan | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Action Plan EIS-0389: Mitigation Action Plan Trinity Public Utilities District Direct Interconnection Project Western Area Power Administration (Western) proposes to...

  13. EA-1595: Mitigation Action Plan | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Mitigation Action Plan EA-1595: Mitigation Action Plan Davis-Mead 230-kV Transmission Line Reconductor Project Western Area Power Administration proposes to reconductor ...

  14. Unsolicited Proposals

    Broader source: Energy.gov [DOE]

    The Department of Energy's (DOE’s) central point of receipt for all Unsolicited Proposals is the National Energy Technology Laboratory (NETL) which includes all DOE Program Research Areas.   

  15. Proposed Rules

    National Nuclear Security Administration (NNSA)

    4414 Federal Register / Vol. 78, No. 209 / Tuesday, October 29, 2013 / Proposed Rules NRC about the availability of information for the proposed Waste Confidence rule and DGEIS. You may access publicly available information related to these documents by any of the following methods: * Federal Rulemaking Web Site: Go to http://www.regulations.gov and search for Docket ID NRC-2012-0246. * NRC's Waste Confidence Web site: Go to http://www.nrc.gov/waste/spent- fuel-storage/wcd.html. * NRC's

  16. Proposal Process

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposal Process Network R&D Software-Defined Networking (SDN) Experimental Network Testbeds 100G SDN Testbed Testbed Description Proposal Process Terms and Conditions Dark Fiber Testbed Test Circuit Service Testbed Results Current Testbed Research Previous Testbed Research Performance (perfSONAR) Software & Tools Development Data for Researchers Partnerships Publications Workshops Contact Us Technical Assistance: 1 800-33-ESnet (Inside US) 1 800-333-7638 (Inside US) 1 510-486-7600

  17. Proposed Rules

    Energy Savers [EERE]

    EIS, Draft Corridors - September 2007. | Department of Energy Proposed Energy Transport Corridors: West-wide energy corridor programmatic EIS, Draft Corridors - September 2007. Proposed Energy Transport Corridors: West-wide energy corridor programmatic EIS, Draft Corridors - September 2007. Map of the area covered by a programmatic environmental impact statement (PEIS), "Designation of Energy Corridors on Federal Land in the 11 Western States" (DOE/EIS-0386) to address the

  18. Unsolicited Proposals

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    2002-02-27

    The order sets forth Department of Energy (DOE) requirements and responsibilities for the receipt, processing, and review of unsolicited proposals (USPs). To ensure that those submitting USPs are notified in a timely manner of the status (e.g., pending, accepted for funding, or declined) of their Supersedes DOE O 542.2. Certified 12-28-06.

  19. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  20. Mitigation Action Plan

    SciTech Connect (OSTI)

    Not Available

    1994-02-01

    This Mitigation Action Plan (MAP) focuses on mitigation commitments stated in the Supplemental Environmental Impact Statement (SEIS) and the Record of Decision (ROD) for the Naval Petroleum Reserve No. 1 (NPR-1). Specific commitments and mitigation implementation actions are listed in Appendix A-Mitigation Actions, and form the central focus of this MAP. They will be updated as needed to allow for organizational, regulatory, or policy changes. It is the intent of DOE to comply with all applicable federal, state, and local environmental, safety, and health laws and regulations. Eighty-six specific commitments were identified in the SEIS and associated ROD which pertain to continued operation of NPR-1 with petroleum production at the Maximum Efficient Rate (MER). The mitigation measures proposed are expected to reduce impacts as much as feasible, however, as experience is gained in actual implementation of these measures, some changes may be warranted.

  1. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  2. General Atomics (GA) | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Atomics (GA) Subscribe to RSS - General Atomics (GA) General Atomics Image: General Atomics (GA) The Scorpion's Strategy: "Catch and Subdue" Read more about The Scorpion's...

  3. Defining the no action alternative for NEPA document of continuing actions

    SciTech Connect (OSTI)

    McCold, L.N.; Saulsbury, J.W.

    1995-12-01

    Environmental professionals today must address many issues that might not have been foreseen by developers of the National Environmental Policy Act of 1969 (NEPA) or the President`s Council on Environmental Quality (CEQ) regulations for implementing NEPA. One issue is the definition of the no action alternative for NEPA documentation of continuing actions. The CEQ regulations do not define the no action alternative, but merely state that NEPA analyses shall {open_quotes}include the alternative of no action{close_quotes}. For NEPA analyses of newly proposed actions, the practical definition of the no action alternative is clear (i.e., the agency will not implement the proposed action or alternative actions). However, the practical definition for NEPA analyses of continuing actions is not so clear. To clarify the definition of the no action alternative for continuing actions, particularly those that involve agency decisions about relicensing existing projects or continuing to operate existing programs or facilities. In trying to clarify the definition of the no action alternative for continuing actions, this paper examines the function of the no action alternative for NEPA analyses in general. Pertinent issues include how the definition of the no action alternative affects the selection of the baseline for environmental analysis and whether inclusion of the no action alternative really forces agencies to consider no action as a realistic alternative. To address these issues, this paper begins with a discussion of relevant legal decisions involving the no action alternative in NEPA analyses. The paper then examines some agency NEPA regulations and recent NEPA documents to provide examples of how some agencies address the no action alternative for continuing actions. Finally, the paper suggests definitions of the no action alternative for continuing actions and methods for addressing no action as a realistic alternative.

  4. Portsmouth Remedial Actions Documents | Department of Energy

    Energy Savers [EERE]

    Remedial Actions Documents Portsmouth Remedial Actions Documents Remedial Action documents for: Portsmouth Site Process Buildings and Complex Facilities D&D Decision Portsmouth Site Site-Wide Waste Disposition Decision Proposed Plan for the Site-wide Waste Disposition Evaluation Project (5.76 MB) Proposed Plan for the Process Buildings and Complex Facilities D&D Evaluation Project (1.66 MB) RI/FS Report for the Site-Wide Waste Disposition Evaluation Project for Portsmouth incl.

  5. EA-1934: Mitigation Action Plan | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Mitigation Action Plan EA-1934: Mitigation Action Plan Expansion of Active Borrow Areas, Hanford Site, Richland, Washington This Mitigation Action Plan is an integral part of the Finding of No Significant Impact for the proposed action within the Expansion of Active Borrow Areas, Hanford Site. The proposed action would expand 11active borrow pits on the Hanford Site that were included in the previous Environmental Assessments (DOE/EA-1403, DOE/EA-1454), and establish 1 new borrow source. This

  6. RCRA corrective action determination of no further action

    SciTech Connect (OSTI)

    1996-06-01

    On July 27, 1990, the U.S. Environmental Protection Agency (EPA) proposed a regulatory framework (55 FR 30798) for responding to releases of hazardous waste and hazardous constituents from solid waste management units (SWMUs) at facilities seeking permits or permitted under the Resource Conservation and Recovery Act (RCRA). The proposed rule, `Corrective Action for Solid Waste Management Units at Hazardous Waste Facilities`, would create a new Subpart S under the 40 CFR 264 regulations, and outlines requirements for conducting RCRA Facility Investigations, evaluating potential remedies, and selecting and implementing remedies (i.e., corrective measures) at RCRA facilities. EPA anticipates instances where releases or suspected releases of hazardous wastes or constituents from SWMUs identified in a RCRA Facility Assessment, and subsequently addressed as part of required RCRA Facility Investigations, will be found to be non-existent or non-threatening to human health or the environment. Such releases may require no further action. For such situations, EPA proposed a mechanism for making a determination that no further corrective action is needed. This mechanism is known as a Determination of No Further Action (DNFA) (55 FR 30875). This information Brief describes what a DNFA is and discusses the mechanism for making a DNFA. This is one of a series of Information Briefs on RCRA corrective action.

  7. 30-Day Federal Register Notice - Proposed

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ACTION: Notice and Request for OMB Review and Comment SUMMARY: The Department of Energy (DOE) has submitted to the Office of Management and Budget (OMB) for clearance, a proposal ...

  8. Ultra High p-doping Material Research for GaN Based Light Emitters

    SciTech Connect (OSTI)

    Vladimir Dmitriev

    2007-06-30

    The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing

  9. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Mreke, Janina Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  10. 30-Day Federal Register Notice - Proposed

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Revised 11-2009 30-Day Federal Register Notice - Proposed [6450-01-P] DEPARTMENT OF ENERGY Proposed Agency Information Collection AGENCY: U.S. Department of Energy. ACTION: Notice and Request for OMB Review and Comment SUMMARY: The Department of Energy (DOE) has submitted to the Office of Management and Budget (OMB) for clearance, a proposal for collection of information under the provisions of the Paperwork Reduction Act of 1995. The proposed collection will {enter a brief description of the

  11. 30-Day Federal Register Notice - Proposed

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    30-Day Federal Register Notice - Proposed [6450-01-P] DEPARTMENT OF ENERGY Proposed Agency Information Collection AGENCY: U.S. Department of Energy. ACTION: Notice and Request for OMB Review and Comment SUMMARY: The Department of Energy (DOE) has submitted to the Office of Management and Budget (OMB) for clearance, a proposal for collection of information under the provisions of the Paperwork Reduction Act of 1995. The proposed collection will {enter a brief description of the collection that

  12. 60-DAY Federal Register Notice - Proposed

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Proposed [6450-01-P] DEPARTMENT OF ENERGY Proposed Agency Information Collection AGENCY: U.S. Department of Energy ACTION: Notice and Request for Comments SUMMARY: The Department of Energy (DOE) invites public comment on a proposed collection of information that DOE is developing for submission to the Office of Management and Budget (OMB) pursuant to the Paperwork Reduction Act of 1995. Comments are invited on: (a) whether the proposed collection of information is necessary for the proper

  13. Discovery in Action - Pacific Northwest National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Discovery in Action Discovery in Action

  14. GA SNC Solar | Open Energy Information

    Open Energy Info (EERE)

    GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and Sierra Nevada Corp. References: GA-SNC...

  15. Defining the no-action alternative for National Environmental Policy Act analyses of continuing actions

    SciTech Connect (OSTI)

    McCold, L.N.; Saulsbury, J.W.

    1998-01-01

    The Council on Environmental Quality (CEQ) regulations for implementing the National Environmental Policy Act of 1969 (NEPA) do not define the no-action alternative, stating only that EPA analyses shall include the alternative of no action. The definition of the no-action alternative for newly proposed actions seems clear. However, for continuing actions, the meaning of the no-action alternative is ambiguous. This article examines the overall function of the no-action alternative for NEPA analyses of continuing actions. It begins with a discussion of the conflicting definitions of the no-action alternative for continuing activities, including CEQ regulations and guidelines related to the no-action alternative and legal decisions that have helped establish precedence for defining no action. A review of NEPA regulations and guidelines of 10 federal agencies shows how different agencies define no-action for continuing actions. Review of six recent NEPA documents on continuing actions reveals how their definition of the no-action alternative promote or impede informed decision-making.

  16. Property:NEPA Proposed Action | Open Energy Information

    Open Energy Info (EERE)

    line (Alternative D) or two parallel lines (Alternative E) running 63 miles from the Red Substation near Killdeer to the new White Substation and on to the Blue Substation and...

  17. EIS-0385: Notice of Proposed Floodplain and Wetland Actions ...

    Broader source: Energy.gov (indexed) [DOE]

    Announcement The Department of Energy (DOE) is preparing an environmental impact statement (EIS) for site selection for expansion of the Strategic Petroleum Reserve, as required by...

  18. EA-1993: Proposed High Explosive Science & Engineering Project...

    Office of Environmental Management (EM)

    The proposed action would be to design, construct, and operate a High Explosive Science ... scientific staff and supporting computational and experimental capabilities as well ...

  19. QER- Comment of Berkshire Environmental Action Team

    Broader source: Energy.gov [DOE]

    Dear members of the Quadrennial Energy Review Task Force, Please find attached comments from the Berkshire Environmental Action Team, Inc. (BEAT) regarding the proposed natural gas pipeline expansion. Thank you for considering our comments.

  20. Status of Corrective Actions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    WIPP AIB Report Status of Corrective Actions Status of Corrective Actions at LANL Department of Energy Issues Accident Investigation Board (AIB) Report on February 14 Incident ...

  1. Atomic structure of defects in GaN:Mg grown with Ga polarity

    SciTech Connect (OSTI)

    Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; Jasinski, J.; O'Keefe, M.A.; Hautakangas, S.; Laakso, A.; Saarinen, K.

    2003-11-25

    Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {l_brace}11{und 2}3{r_brace} planes seen in cross-section as triangulars. Some other defects appear in cross-section as trapezoidal (rectangular) defects as a result of presence of truncated pyramids. Both type of defects have hollow centers. They are decorated by Mg on all six side walls and a base. The GaN which grows inside on the defect walls shows polarity inversion. It is shown that change of polarity starts from the defect tip and propagates to the base, and that the stacking sequence changes from ab in the matrix to bc inside the defect. Exchange of the Ga sublattice with the N sublattice within the defect leads to 0.6 {+-} 0.2{angstrom} displacement between Ga sublattices outside and inside the defects. It is proposed that lateral overgrowth of the cavities formed within the defect takes place to restore matrix polarity on the defect base.

  2. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  3. RCRA corrective action program guide (Interim)

    SciTech Connect (OSTI)

    Not Available

    1993-05-01

    The US Department of Energy (DOE) is responsible for compliance with an increasingly complex spectrum of environmental regulations. One of the most complex programs is the corrective action program proposed by the US Environmental Protection Agency (EPA) under the authority of the Resource Conservation and Recovery Act (RCRA) as amended by the Hazardous and Solid Waste Amendments (HSWA). The proposed regulations were published on July 27, 1990. The proposed Subpart S rule creates a comprehensive program for investigating and remediating releases of hazardous wastes and hazardous waste constituents from solid waste management units (SWMUs) at facilities permitted to treat, store, or dispose of hazardous wastes. This proposed rule directly impacts many DOE facilities which conduct such activities. This guidance document explains the entire RCRA Corrective Action process as outlined by the proposed Subpart S rule, and provides guidance intended to assist those persons responsible for implementing RCRA Corrective Action at DOE facilities.

  4. Electronic contribution to friction on GaAs

    SciTech Connect (OSTI)

    Applied Science and Technology Graduate Group, UC Berkeley; Dept. of Materials Sciences and Engineering, UC Berkeley; Salmeron, Miquel; Qi, Yabing; Park, J.Y.; Hendriksen, B.L.M.; Ogletree, D.F.; Salmeron, Miquel

    2008-04-15

    The electronic contribution to friction at semiconductor surfaces was investigated by using a Pt-coated tip with 50nm radius in an atomic force microscope sliding against an n-type GaAs(100) substrate. The GaAs surface was covered by an approximately 1 nm thick oxide layer. Charge accumulation or depletion was induced by the application of forward or reverse bias voltages. We observed a substantial increase in friction force in accumulation (forward bias) with respect to depletion (reverse bias). We propose a model based on the force exerted by the trapped charges that quantitatively explains the experimental observations of excess friction.

  5. Department of Energy Initiates Formal Enforcement Action in Los...

    Office of Environmental Management (EM)

    actions today against the University of California (UC) and the Los Alamos National ... of Violation to the University of California with a 3,000,000 proposed civil ...

  6. Mitigation Action Plans (MAP) and Related Documents | Department...

    Broader source: Energy.gov (indexed) [DOE]

    EA-1704: Mitigation Action Plan Construction and Operation of a Proposed Cellulosic Biorefinery, BlueFire Fulton Renewable Energy, LLC, Fulton, Mississippi March 10, 2010...

  7. EIS-0425: Mitigation Action Plan | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Project BPA decided to implement the Proposed Action of the Mid-Columbia Coho Restoration Program as described in the Mid-Columbia Coho Restoration Program Final Environmental...

  8. EIS-0384: Mitigation Action Plan | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    project designers and reviewers minimized short-term and long-term environmental and social impacts of the Proposed Action through project design, consultation with regulatory...

  9. Corrective Actions Process

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Community, Environment » Environmental Stewardship » Environmental Cleanup » Corrective Actions Corrective Actions Process The general process for evaluating and remediating potential release sites is called the corrective action process. Contact Environmental Communication & Public Involvement P.O. Box 1663 MS M996 Los Alamos, NM 87545 (505) 667-0216 Email Corrective actions The Laboratory's corrective actions process refers to the way in which the Laboratory investigates, stabilizes,

  10. LANSCE | User Resources | Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposals LANSCE accepts proposals for the Lujan Neutron Scattering Center, Proton Radiography (pRad) and the Weapons Neutron Research Facility (WNR). Calls for proposals are typically issued twice a year, for each run cycle of the accelerator. Deadlines will be posted. Lujan Center pRad WNR Lujan Center call for proposals is closed. Proposal Submission Read the Lujan Center call for proposals. Deadline: May 21, 2016, 5:00 p.m. (MDT) Unclassified Proposal Submission: Unclassified proposals must

  11. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  12. DOE Initiates Enforcement Actions Against 4 Showerhead Manufacturers

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    (Notice of Proposed Civil Penalty and Requests for Test Data Issued) | Department of Energy Initiates Enforcement Actions Against 4 Showerhead Manufacturers (Notice of Proposed Civil Penalty and Requests for Test Data Issued) DOE Initiates Enforcement Actions Against 4 Showerhead Manufacturers (Notice of Proposed Civil Penalty and Requests for Test Data Issued) March 7, 2010 - 3:41pm Addthis The Office of General Counsel has issued a Notice of Proposed Civil Penalty to Hudson-Reed Limited

  13. 2014 Joint Action Workshop

    Broader source: Energy.gov [DOE]

    The Joint Action Workshop is an annual event for joint action agencies and their members to meet informally and discuss emerging policy, regulatory, and power supply issues, and other topics...

  14. General User Proposals (GUPs)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    or until the number of shifts recommended by the Proposal Study Panels (PSP) for the life of the proposal have been used. Users may decide whether to submit a new proposal or...

  15. Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

    SciTech Connect (OSTI)

    Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Aho, Timo; Raappana, Marianna; Guina, Mircea

    2015-09-28

    We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.

  16. Mitigation Action Plan

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mitigation Action Plan FutureGen 2.0 Project DOE/EIS-0460 U.S. Department of Energy National Energy Technology Laboratory March 2014 DOE/EIS-0460 FUTUREGEN 2.0 PROJECT MITIGATION ACTION PLAN INTENTIONALLY LEFT BLANK DOE/EIS-0460 FUTUREGEN 2.0 PROJECT MITIGATION ACTION PLAN TABLE OF CONTENTS Introduction ................................................................................................................................................... 1 Purpose

  17. Mitigation Action Plan

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Mitigation Action Plan FutureGen 2.0 Project DOE/EIS-0460 U.S. Department of Energy National Energy Technology Laboratory March 2014 DOE/EIS-0460 FUTUREGEN 2.0 PROJECT MITIGATION ACTION PLAN INTENTIONALLY LEFT BLANK DOE/EIS-0460 FUTUREGEN 2.0 PROJECT MITIGATION ACTION PLAN TABLE OF CONTENTS Introduction ................................................................................................................................................... 1 Purpose

  18. Trident Call for Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Trident Call for Proposals Trident Call for Proposals Enabling world-class science in high-energy density physics and fundamental laser-matter interactions Contact Operations Team ...

  19. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  20. ADDENDUM TO ACTION DESCRIPTION MEMORANDUM NIAGARA FALLS STORAGE SITE

    Office of Legacy Management (LM)

    ADDENDUM TO ACTION DESCRIPTION MEMORANDUM NIAGARA FALLS STORAGE SITE PROPOSED INTERIM REMEDIAL ACTIONS FOR FY 1983-85 ACCELERATED PROGRAM (1984 VICINITY PROPERTIES CLEANUP) Prepared by Environmental Research Division Argonne National Laboratory Argonne, Illinois July 1984 Prepared for U.S. Department of Energy Oak Ridge Operations Technical Services Division Oak Ridge, Tennessee CONTENTS Page SUMMARY OF PROPOSED ACTION AND RELATED ACTIVITIES ........... 1 HISTORY AND ENVIRONMENTAL SETTING

  1. EA-1915: Mitigation Action Plan | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Mitigation Action Plan EA-1915: Mitigation Action Plan Proposed Conveyance of Land at the Hanford Site, Richland, Washington DOE prepared a Mitigation Action Plan (MAP) as an integral part of the Finding of No Significant Impact for DOE's EA. For more information on this project, see the project webpage: http://energy.gov/nepa/ea-1915-proposed-conveyance-land-hanford-site-ric... EA-1915-MAP-2015.pdf (86.09 KB) More Documents & Publications EA-1915: Final Environmental Assessment EA-1915:

  2. Trident Call for Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Trident Call for Proposals Trident Call for Proposals Enabling world-class science in high-energy density physics and fundamental laser-matter interactions Contact Operations Team Leader Randy Johnson (505) 665-5089 Email Trident Governing Board Contact Ray Leeper (505) 667-3653 Email Call for Proposals 2015-2016 The Trident Laser Facility is accepting proposals for experiments to be performed at the facility during the period October 2015 through September 2016. All proposals submitted are

  3. NETL: Unsolicited Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Unsolicited Proposals The Department of Energy's (DOE's) central point of receipt for all Unsolicited Proposals is the National Energy Technology Laboratory (NETL) as outlined in the link below which includes all DOE Program Research Areas. The "Guide for the Submission of Unsolicited Proposals" provides more information on the unsolicited proposal process. DOE encourages organizations and individuals to submit self-generated, unsolicited proposals that are relevant to DOE's research

  4. PROPOSAL PREPARATION INSTRUCTIONS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Contract No. DE-AC27-08RV14800 Modification No. A015 PROPOSAL PREPARATION INSTRUCTIONS 1. INTRODUCTION This document contains instructions to the contractor for the preparation of a proposal in response to the modification of the contract which defines work that will be funded by and performed under the provisions of the American Recovery and Reinvestment Act (Recovery Act). The contractor shall provide a written proposal consisting of a Technical Proposal and a Cost and Fee Proposal. The

  5. LANSCE | User Resources | Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposals dotline Lujan Center: Material Science FY17 Call for Proposals Proposal Submission: https://www.lanl.gov/orgs/lansce/ Lujan Center Call for Proposals is Open. Deadline: May 21, 2016 at 5:00 pm (MDT). lansce.lanl.gov lansce.lanl.gov/lujan The Los Alamos Neutron Science Center (LANSCE) invites proposals for material science experiments at the Lujan Center addressing science of NNSA and LANL programmatic interest for the September 2016 - February 2017 run cycle. The Lujan Center utilizes

  6. Action Item Review and Status

    Office of Environmental Management (EM)

    Board Action Items Action Item Resolution Action Item Strategic Planning Initiative Optimization Study Resolution Presentation by S. Schneider (HLW System Integrated Project...

  7. Analysis of the GaInP/GaAs/1-eV/Ge Cell and Related Structures for Terrestrial Concentrator Application: Preprint

    SciTech Connect (OSTI)

    Friedman, D. J.; Kurtz, S. R.; Geisz, J. F.

    2002-05-01

    This conference paper describes the analysis of the potential of GaInP/GaAs/1-eV/Ge four-junction solar cell to improve on the efficiency of the state-of-the-art GaInP/GaAs/Ge benchmark. We emphasize three factors: (1) The newly proposed terrestrial concentrator spectrum has a lower ratio of red to blue light than does the old AM1.5 direct standard spectrum. (2) Standard two-layer antireflection coatings do not provide near-zero reflectance over the full spectral range of interest for these devices. (3) GaInNAs junctions used to date for the 1-eV junction have quantum efficiencies less than {approx}75%. These factors all limit the device current, adversely affecting the four-junction efficiency. We discuss strategies for ameliorating this problem, including going to alternate structures such as a GaInP/GaAs/0.9-eV three-junction device.

  8. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  9. Call for Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposals | FY2016 pRad: Call for Proposals Proposal Submission Deadline: 5:00 pm (MST) Wednesday, March 16, 2016. PAC Review: April 6th and 7th, 2016. Call for Proposals: Proton Radiography FY17 The Los Alamos Neutron Science Center (LANSCE) is issuing a Call for Proposals for experiments for the Proton Radiography Facility (pRad) during Fiscal Year 2017. Proposals for FY18 experiments that will not be ready to be performed FY17 will be considered. The proton radiography facility uses 800 MeV

  10. LANSCE | User Resources | Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposals | FY2017 pRad: Call for Proposals Proposal Submission Deadline: 5:00 pm (MST) Wednesday, March 16, 2016. PAC Review: April 6th and 7th, 2016. Call for Proposals: Proton Radiography FY17 The Los Alamos Neutron Science Center (LANSCE) is issuing a Call for Proposals for experiments for the Proton Radiography Facility (pRad) during Fiscal Year 2017. Proposals for FY18 experiments that will not be ready to be performed FY17 will be considered. The proton radiography facility uses 800 MeV

  11. Action Plan - Hanford Site

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Agreement Action Plan Tri-Party Agreement The Agreement Action Plan Announcements List of Approved Changes TPA Project Manager's Lists Modifications for Public Comment Data Management MP-14 WIDS Information Hanford Site Waste Management Units Report Hanford Public Involvement Plan Administrative Record (AR) Related Links Action Plan Email Email Page | Print Print Page | Text Increase Font Size Decrease Font Size Executive Summary 1.0 Introduction 1.1 Purpose 1.2 Regulatory Authorities 1.3

  12. Protective Actions and Reentry

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    1997-08-21

    This volume defines appropriate protective actions and reentry of a site following an emergency. Canceled by DOE G 151.1-4.

  13. General User Proposals (GUPs)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General User Proposals (GUPs) General User Proposals (GUPs) Print Tuesday, 01 June 2010 09:36 General Users are granted beam time through a peer review proposal process. They may use beamlines and endstations provided by the ALS or the Participating Research Team (PRT) that operates the beamline. Before Submitting a Proposal Review the ALS Beamlines Directory to learn about the research capabilities of individual beamlines at the ALS. Contact the beamline scientist or the local contact listed in

  14. Submit CSES Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Submit Proposals Submit CSES Proposals High quality, cutting-edge science in the areas of astrophysics, space physics, solid planetary geoscience, and climate science. Contact Director Reiner Friedel (505) 665-1936 Email Professional Staff Assistant Georgia D. Sanchez (505) 665-0855 Email FY16 Call for Proposals period is now closed. The Center for Space and Earth Science (CSES) at Los Alamos National Laboratory (LANL) annually solicits proposals in the disciplines of geoscience, climate,

  15. Call for Proposal Submissions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    call for proposal submissions Call for Proposal Submissions The Jupiter Laser Facility (JLF) announces that the Request for Proposals for the JLF User Program for experiments in Calendar Year 2017, January through December, is open. Jupiter is a multi-platform, intermediate-scale laser user facility located at Lawrence Livermore National Laboratory. Proposals will be accepted for the laser platforms Titan, Janus, and COMET. Information and submission instructions are available at

  16. Development of 1.25 eV InGaAsN for triple junction solar cells

    SciTech Connect (OSTI)

    LI,N.Y.; SHARPS,P.R.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Development of next generation high efficiency space monolithic multifunction solar cells will involve the development of new materials lattice matched to GaAs. One promising material is 1.05 eV InGaAsN, to be used in a four junction GaInP{sub 2}/GaAs/InGaAsN/Ge device. The AMO theoretical efficiency of such a device is 38--42%. Development of the 1.05 eV InGaAsN material for photovoltaic applications, however, has been difficult. Low electron mobilities and short minority carrier lifetimes have resulted in short minority carrier diffusion lengths. Increasing the nitrogen incorporation decreases the minority carrier lifetime. The authors are looking at a more modest proposal, developing 1.25 eV InGaAsN for a triple junction GaInP{sub 2}/InGaAsN/Ge device. The AMO theoretical efficiency of this device is 30--34%. Less nitrogen and indium are required to lower the bandgap to 1.25 eV and maintain the lattice matching to GaAs. Hence, development and optimization of the 1.25 eV material for photovoltaic devices should be easier than that for the 1.05 eV material.

  17. On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Gao, Feng; Chen, Di; Tuller, Harry L.; Thompson, Carl V.; Palacios, Toms

    2014-03-28

    Water-related redox couples in ambient air are identified as an important source of the surface trapping states, dynamic on-resistance, and drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). Through in-situ X-ray photoelectron spectroscopy (XPS), direct signature of the water-related specieshydroxyl groups (OH) was found at the AlGaN surface at room temperature. It was also found that these species, as well as the current collapse, can be thermally removed above 200?C in vacuum conditions. An electron trapping mechanism based on the H{sub 2}O/H{sub 2} and H{sub 2}O/O{sub 2} redox couples is proposed to explain the 0.5?eV energy level commonly attributed to the surface trapping states. Finally, the role of silicon nitride passivation in successfully removing current collapse in these devices is explained by blocking the water molecules away from the AlGaN surface.

  18. WREP Mitigation Action Plan

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Electrical Interconnection of the Whistling Ridge Energy Project 1 Mitigation Action Plan June 2015 Mitigation Action Plan for the Whistling Ridge Energy Project Measure Implementation Timeline Implementation Responsibility Earth (geology, soils, topography, and geologic hazards) Prior to Project construction, confirm subsurface soil and rock types and strength properties through a detailed geotechnical investigation of the specific locations of all wind Project elements, including wind

  19. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  20. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  1. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  2. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  3. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

    SciTech Connect (OSTI)

    Kalentyeva, I. L. Zvonkov, B. N.; Vikhrova, O. V.; Danilov, Yu. A.; Demina, P. B.; Dorokhin, M. V.; Zdoroveyshchev, A. V.

    2015-11-15

    InGaAs/GaAsSb/GaAs bilayer quantum-well structures containing a magnetic-impurity δ-layer (Mn) at the GaAs/InGaAs interface are experimentally studied for the first time. The structures are fabricated by metal organic chemical-vapor deposition (MOCVD) and laser deposition on substrates of conducting (n{sup +}) and semi-insulating GaAs in a single growth cycle. The InGaAs-layer thickness is varied from 1.5 to 5 nm. The significant effect of a decrease in the InGaAs quantum-well thickness on the optical and magnetotransport properties of the structures under study is detected. Nonlinear magnetic-field dependence of the Hall resistance and negative magnetoresistance at temperatures of ≤30–40 K, circular polarization of the electroluminescence in a magnetic field, opposite behaviors of the photoluminescence and electroluminescence emission intensities in the structures, and an increase in the contribution of indirect transitions with decreasing InGaAs thickness are observed. Simulation shows that these effects can be caused by the influence of the δ-layer of acceptor impurity (Mn) on the band structure and the hole concentration distribution in the bilayer quantum well.

  4. Requests for Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Requests for Proposals Requests for Proposals World-class experts and capabilities countering all aspects of explosive threats, and aiming predominantly at enhanced detection capabilities. What LACED cannot do LACED is prohibited by US Federal Law from responding to RFPs on its own or as a co-respondent. Organizations responding to a RFP can reference a "unique" capability or service available at LACED in an RFP proposal response. Such a reference should specify that LACED

  5. General User Proposals (GUPs)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General User Proposals (GUPs) Print General Users are granted beam time through a peer review proposal process. They may use beamlines and endstations provided by the ALS or the Participating Research Team (PRT) that operates the beamline. Before Submitting a Proposal Review the ALS Beamlines Directory to learn about the research capabilities of individual beamlines at the ALS. Contact the beamline scientist or the local contact listed in the tables, for additional information about the

  6. LANSCE | User Resources | Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2016 Neutron and Nuclear Science Facility Call for Proposals Proposal Submission Neutron and Nuclear Science Facility (WNR and Lujan Center) Deadline: Friday, April 29, 2016, 5:00 pm (MDT). lansce.lanl.gov wnr.lanl.gov The Los Alamos Neutron Science Center (LANSCE) is issuing a Call for Proposals for Nuclear Science at the Lujan Center and WNR Facility for the upcoming run cycle - September 2016 - February 2017. The Neutron and Nuclear Science Research Facility (WNR) and Lujan Center provide

  7. General User Proposal Scores

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposal Scores Print Scoring Proposals are scored on a scale of 1 to 5, with 1 being the best score and 5 the worst. Reviewers are requested to use the following ranking schema: Must do High Priority Medium Priority Low priority Don't do Beam time is assigned based on each proposal's score in relation to all other proposals for a given beamline. For beamlines where beam time requests exceed available beam time, a cutoff score is assigned after which no beam time is allocated. Individual Beam

  8. Categories for IGPPS Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on an independent, revolutionary scientific idea that has Los Alamos National Laboratory mission relevance. The proposed work must not be related to the programmatic research...

  9. 2015 Electricity Form Proposals

    Gasoline and Diesel Fuel Update (EIA)

    Quarterly Electricity Imports and Exports Report (EIA-111) OMB Clearance Renewal in 2015 ... Report (EIA-111) survey on August 26, 2015. The initial proposals were announced to ...

  10. Proposals and Design Reports

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposals and Design Reports Proposals and Design Reports Proposal (1/2/04) Proposal Addendum (29/3/04) Physics Case and Detector Technology Report (12/04) Technical Design Report (7/06) Reviews DOE CD-4 DOE 2008 DOE CD-3b CD-3b Readiness DOE CD-1/2/3a CD-2/3a Readiness CD-1 Readiness PAC Report (4/05) Approvals FNAL PAC Approval: April 15, 2004 DOE Critical Decision 1,2,3a (Performance Baseline, Construction Start) Approval: March 30, 2007 DOE Critical Decision 4 (Project Completion) Approval:

  11. General User Proposals (GUPs)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    operates the beamline. Before Submitting a Proposal Review the ALS Beamlines Directory to learn about the research capabilities of individual beamlines at the ALS. Contact the...

  12. MITIGATION ACTION PLAN

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Georgia MITEC Small Business Boot Camp In Georgia October 4, 2016 9:00AM to 3:00PM EDT Atlanta, GA DOE's Clean Energy Manufacturing Initiative (CEMI) is hosting a MITEC Boot Camp in Atlanta, Georgia coordinated through the Manufacturing Impacts Through Energy and Commerce (MITEC) program. This boot camp is designed to help small- to medium-sized enterprises (SMEs) in advanced energy sectors access DOE national lab capabilities and assets; learn about DOE programs targeting SMEs including the

  13. Determining the band alignment of TbAs:GaAs and TbAs:In0.53Ga0.47As

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bomberger, Cory C.; Vanderhoef, Laura R.; Rahman, Abdur; Shah, Deesha; Chase, D. Bruce; Taylor, Antoinette J.; Azad, Abul K.; Doty, Matthew F.; Zide, Joshua M. O.

    2015-09-10

    Here, we propose and systematically justify a band structure for TbAs nanoparticles in GaAs and In0.53Ga0.47As host matrices. Moreover, fluence-dependent optical-pump terahertz-probe measurements suggest the TbAs nanoparticles have a band gap and provide information on the carrier dynamics, which are determined by the band alignment. Spectrophotometry measurements provide the energy of optical transitions in the nanocomposite systems and reveal a large blue shift in the absorption energy when the host matrix is changed from In0.53Ga0.47As to GaAs. Finally, Hall data provides the approximate Fermi level in each system. From this data, we deduce that the TbAs:GaAs system forms a typemore » I (straddling) heterojunction and the TbAs:In0.53Ga0.47As system forms a type II (staggered) heterojunction.« less

  14. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs...

    Office of Scientific and Technical Information (OSTI)

    irradiated AlGaNGaN HEMTs This content will become publicly available on August 26, 2016 Title: Degradation mechanisms of 2 MeV proton irradiated AlGaNGaN HEMTs Authors: ...

  15. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  16. Status of Corrective Actions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Report on February 14 Incident at the Waste Isolation Pilot Project in Carlsbad, New Mexico April 12, 2012 x x Contact Communication Office (505) 667-7000 Corrective Actions...

  17. Notices ACTION: Notice.

    Office of Environmental Management (EM)

    8867 Federal Register Vol. 80, No. 215 Friday, November 6, 2015 Notices ACTION: Notice. SUMMARY: This notice announces EPA's receipt of an application 91163-EUP-R from Texas...

  18. Notices ACTION: Notice.

    Energy Savers [EERE]

    867 Federal Register Vol. 80, No. 215 Friday, November 6, 2015 Notices ACTION: Notice. SUMMARY: This notice announces EPA's receipt of an application 91163-EUP-R from Texas...

  19. Corrective Action Program Guide

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    2006-03-02

    This Guide was developed to assist the Department of Energy (DOE) organizations and contractors in the development, implementation, and followup of corrective action programs utilizing the feedback and improvement core safety function within DOE's Integrated Safety Management System. This Guide outlines some of the basic principles, concepts, and lessons learned that DOE managers and contractors might consider when implementing corrective action programs based on their specific needs. Canceled by DOE G 414.1-2B. Does not cancel other directives.

  20. Climate Action Champion: Technical

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    energy.gov/betterbuildings Climate Action Champion: Technical Assistance to the City of Seattle Planning for Seattle's new Building Energy Code Overview The City of Seattle, identified as a Climate Action Champion (CAC) by the Department of Energy (DOE), is revising its 2012 Energy Code, already one of the most progressive in the country. Seattle has made a pledge to be carbon neutral by 2050. Seattle received technical assistance from the Pacific Northwest National Laboratory in order to

  1. (In,Ga)As/GaP electrical injection quantum dot laser

    SciTech Connect (OSTI)

    Heidemann, M. Höfling, S.; Kamp, M.

    2014-01-06

    The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm{sup 2} at a heat-sink temperature of 80 K.

  2. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  3. Proposed Rules Federal Register

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    7963 Vol. 79, No. 128 Thursday, July 3, 2014 DEPARTMENT OF ENERGY 10 CFR Part 429 [Docket No. EERE-2013-BT-NOC-0039] Appliance Standards and Rulemaking Federal Advisory Committee: Cancellation of Open Meetings AGENCY: Office of Energy Efficiency and Renewable Energy, Department of Energy. ACTION: Notice of cancellation of open meetings. SUMMARY: The Department of Energy (DOE) announces the cancellation of open meetings for the Commercial and Industrial Pumps Working Group of the Appliance

  4. Proposed Rules Federal Register

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    8019 Vol. 80, No. 127 Thursday, July 2, 2015 DEPARTMENT OF ENERGY 5 CFR Chapter XXII 10 CFR Chapters II, III, and X Reducing Regulatory Burden AGENCY: Office of the General Counsel, Department of Energy. ACTION: Request for information (RFI). SUMMARY: As part of its implementation of Executive Order 13563, ''Improving Regulation and Regulatory Review,'' issued by the President on January 18, 2011, the Department of Energy (Department or DOE) is seeking comments and information from interested

  5. Proposed Rules Federal Register

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    28736 Vol. 81, No. 90 Tuesday, May 10, 2016 DEPARTMENT OF ENERGY 5 CFR Chapter XXIII 10 CFR Chapters II, III, and X Reducing Regulatory Burden AGENCY: Office of the General Counsel, Department of Energy. ACTION: Request for information (RFI). SUMMARY: As part of its implementation of Executive Order 13563, ''Improving Regulation and Regulatory Review,'' issued by the President on January 18, 2011, the Department of Energy (Department or DOE) is seeking comments and information from interested

  6. Proposed Rules Federal Register

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    75798 Vol. 76, No. 233 Monday, December 5, 2011 DEPARTMENT OF ENERGY 5 CFR Chapter XXIII 10 CFR Chapters II, III, X Reducing Regulatory Burden AGENCY: Office of the General Counsel, Department of Energy. ACTION: Request for information. SUMMARY: As part of its implementation of Executive Order 13563, ''Improving Regulation and Regulatory Review,'' issued by the President on January 18, 2011, the Department of Energy (Department or DOE) is seeking comments and information from interested parties

  7. Proposed Rules Federal Register

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    28518 Vol. 77, No. 94 Tuesday, May 15, 2012 DEPARTMENT OF ENERGY 5 CFR Chapter XXII 10 CFR Chapters II, III, X Reducing Regulatory Burden AGENCY: Office of the General Counsel, Department of Energy. ACTION: Request for information. SUMMARY: As part of its implementation of Executive Order 13563, ''Improving Regulation and Regulatory Review,'' issued by the President on January 18, 2011, the Department of Energy (Department or DOE) is seeking comments and information from interested parties to

  8. Proposed Rules Federal Register

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    31548 Vol. 77, No. 103 Tuesday, May 29, 2012 DEPARTMENT OF ENERGY 5 CFR Chapter XXII 10 CFR Chapters II, III, X Reducing Regulatory Burden AGENCY: Office of the General Counsel, Department of Energy. ACTION: Notice of extension of public comment period. SUMMARY: This notice announces that the period for submitting comments on the Department of Energy's (DOE) request for information (RFI) issued as part of its implementation of Executive Order 13563, ''Improving Regulation and Regulatory

  9. EA-1704: Mitigation Action Plan | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    4: Mitigation Action Plan EA-1704: Mitigation Action Plan Construction and Operation of a Proposed Cellulosic Biorefinery, BlueFire Fulton Renewable Energy, LLC, Fulton, Mississippi This Mitigation Action Plan specifies the methods for implementing mitigation measures that address the potential environmental impacts associated with the construction and operation of a lignocellulosic ethanol refinery, BlueFire Fulton Renewable Energy, LLC in Fulton, Mississippi. EA-1704-MAP-2010.pdf (2.11 MB)

  10. Chapter 5 - Publicizing Contract Actions | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    5 - Publicizing Contract Actions Chapter 5 - Publicizing Contract Actions Acquisition Guide Chapter 5.1 - Congressional Notifications - (May 2015) (3 MB) 5.2_Synopsizing_Proposed_Non-Competitive_Actions_Citing_the_Authority_of_FAR_6302-1_0.pdf (100.9 KB) More Documents & Publications Policy Flash 2015-20 Policy Flash 2016-29 Update to Congressional Notifications - Acquisition Guide Chapter 5.1 and Guide to Financial Assistance Chapter 2, Section 2.6.1

  11. Wong's equations and the small x effective action in QCD (Journal...

    Office of Scientific and Technical Information (OSTI)

    Wong's equations and the small x effective action in QCD Citation Details In-Document Search Title: Wong's equations and the small x effective action in QCD We propose a new form ...

  12. Approved Program Proposals (AP)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Approved Program Proposals (AP) Print An Approved Program (AP) enables an investigator, or a group of investigators, to receive a set percentage of beam time to partner with ALS staff both to carry out an extended research program and to develop new tools and/or new research protocols that will be made available to the general user population. APs are arranged for a period of up to three years. AP Proposal Submission Deadlines January 15 July 15 AP Proposal Submission Guidelines Step 1: Contact

  13. Approved Program Proposals (AP)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Approved Program Proposals (AP) Approved Program Proposals (AP) Print Thursday, 13 May 2010 11:53 An Approved Program (AP) enables an investigator, or a group of investigators, to receive a set percentage of beam time to partner with ALS staff both to carry out an extended research program and to develop new tools and/or new research protocols that will be made available to the general user population. APs are arranged for a period of up to three years. AP Proposal Submission Deadlines January

  14. Approved Program Proposals (AP)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Approved Program Proposals (AP) Print An Approved Program (AP) enables an investigator, or a group of investigators, to receive a set percentage of beam time to partner with ALS staff both to carry out an extended research program and to develop new tools and/or new research protocols that will be made available to the general user population. APs are arranged for a period of up to three years. AP Proposal Submission Deadlines January 15 July 15 AP Proposal Submission Guidelines Step 1: Contact

  15. Approved Program Proposals (AP)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Approved Program Proposals (AP) Print An Approved Program (AP) enables an investigator, or a group of investigators, to receive a set percentage of beam time to partner with ALS staff both to carry out an extended research program and to develop new tools and/or new research protocols that will be made available to the general user population. APs are arranged for a period of up to three years. AP Proposal Submission Deadlines January 15 July 15 AP Proposal Submission Guidelines Step 1: Contact

  16. Approved Program Proposals (AP)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Approved Program Proposals (AP) Print An Approved Program (AP) enables an investigator, or a group of investigators, to receive a set percentage of beam time to partner with ALS staff both to carry out an extended research program and to develop new tools and/or new research protocols that will be made available to the general user population. APs are arranged for a period of up to three years. AP Proposal Submission Deadlines January 15 July 15 AP Proposal Submission Guidelines Step 1: Contact

  17. Approved Program Proposals (AP)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Approved Program Proposals (AP) Print An Approved Program (AP) enables an investigator, or a group of investigators, to receive a set percentage of beam time to partner with ALS staff both to carry out an extended research program and to develop new tools and/or new research protocols that will be made available to the general user population. APs are arranged for a period of up to three years. AP Proposal Submission Deadlines January 15 July 15 AP Proposal Submission Guidelines Step 1: Contact

  18. PROPOSAL PREPARATION INSTRUCTIONS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Contract No. DE-AC27-08RV14800 Modification No. A015 PROPOSAL PREPARATION INSTRUCTIONS 1. ... in response to the modification of the contract which defines work that will be funded ...

  19. 2015 Electricity Form Proposals

    Gasoline and Diesel Fuel Update (EIA)

    (Photovoltaic) Survey Forms November 19, 2015 In early 2016 the U.S. Energy Information ... Details will be provided closer to that date. Proposed changes as of December 2015 Forms ...

  20. Approved Program Proposals (AP)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    its recommendations to the ALS Division Director. A letter will be sent to the PIs of successful proposals specifying the percentage of beam time and the period of the AP. The...

  1. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  2. Proposal Study Panels

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposal Study Panels Print Two Proposal Study Panels (PSPs) exist at the ALS: one for the general sciences and one for structural biology. The role of the PSPs is desribed in User Policy. Note: Users are urged NOT to contact any members of the panels directly. Current members of the general sciences PSP, as of April 2016, are Masa Fukuto, Brookhaven National Laboratory Carol Hirschmugl, University of Wisconsin, Milwaukee Peter Johnson (chair), Brookhaven National Laboratory Apurva Mehta, SLAC

  3. Proposal Study Panels

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposal Study Panels Print Two Proposal Study Panels (PSPs) exist at the ALS: one for the general sciences and one for structural biology. The role of the PSPs is desribed in User Policy. Note: Users are urged NOT to contact any members of the panels directly. Current members of the general sciences PSP, as of April 2016, are Masa Fukuto, Brookhaven National Laboratory Carol Hirschmugl, University of Wisconsin, Milwaukee Peter Johnson (chair), Brookhaven National Laboratory Apurva Mehta, SLAC

  4. Proposal Study Panels

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposal Study Panels Print Two Proposal Study Panels (PSPs) exist at the ALS: one for the general sciences and one for structural biology. The role of the PSPs is desribed in User Policy. Note: Users are urged NOT to contact any members of the panels directly. Current members of the general sciences PSP, as of April 2016, are Masa Fukuto, Brookhaven National Laboratory Carol Hirschmugl, University of Wisconsin, Milwaukee Peter Johnson (chair), Brookhaven National Laboratory Apurva Mehta, SLAC

  5. Proposal Study Panels

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposal Study Panels Print Two Proposal Study Panels (PSPs) exist at the ALS: one for the general sciences and one for structural biology. The role of the PSPs is desribed in User Policy. Note: Users are urged NOT to contact any members of the panels directly. Current members of the general sciences PSP, as of April 2016, are Masa Fukuto, Brookhaven National Laboratory Carol Hirschmugl, University of Wisconsin, Milwaukee Peter Johnson (chair), Brookhaven National Laboratory Apurva Mehta, SLAC

  6. PROPOSED RULEMAKING MEETING

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    UNITED STATES DEPARTMENT OF ENERGY INTEGRATED INTERAGENCY PRE-APPLICATION (IIP) NOTICE OF PROPOSED RULEMAKING PUBLIC WORKSHOP Washington, D.C. Tuesday, March 22, 2016 PROPOSED RULEMAKING MEETING Page: 2 Anderson Court Reporting -- 703-519-7180 -- www.andersonreporting.net 1 PARTICIPANTS: 2 SARAH BALL Edison Electric Institute 3 CAITLIN CALLAGHAN 4 US DOE/OE 5 LESLIE CARPENTER TEP 6 SUSAN CHILSON 7 American Transmission Company 8 STEPHEN FUSILIER Bureau of Land Management 9 DEVIN GLADDEN 10 US

  7. ES H action plan

    SciTech Connect (OSTI)

    Not Available

    1991-01-01

    This document contains planned actions to correct the deficiencies identified in the Pre-Tiger Team Self-Assessment (PTTSA), January 1991, of Sandia National Laboratories (SNL -- Albuquerque, New Mexico; Tonopah, Nevada; and Kauai, Hawaii). The Self-Assessment was conducted by a Self-Assessment Working Group consisting of 19 department managers, with support from Environment, Safety, and Health (ES H) professionals, from October through December 1990. Findings from other past audits, dating back to 1985, were reviewed and compared with the PTTSA findings to determine if additional findings, key findings, or root causes were warranted. The resulting ES H Action Plan and individual planned actions were prepared by the ES H Action Plan Project Group with assistance from the Program owners/authors during February and March 1991. The plan was reviewed by SNL Management in April 1991. This document serves as a planning instrument for the Laboratories to aid in the scoping and sizing of activities related to ES H compliance for the coming five years. It will be modified as required to ensure a workload/funding balance and to address the findings resulting from the Tiger Team assessment at SNL, Albuquerque. The process of producing this document has served well to prepare SNL, Albuquerque, for the coming task of producing the required post-Tiger Team action plan document. 8 tabs.

  8. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A.; Fujioka, H.

    2014-05-05

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  9. DOE Withdraws Proposed Rulemaking (Test Procedure) and Proposed...

    Energy Savers [EERE]

    Withdraws Proposed Rulemaking (Test Procedure) and Proposed Coverage Determination (Energy Conservation Standard) for Set-Top Boxes DOE Withdraws Proposed Rulemaking (Test ...

  10. Notes and Action Items

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Notes and Action Items Notes and Action Items Report on the NUGEX business meeting of June 6, 2000, in Oak Ridge Minute notes by Bas Braams First of all, many thanks to the organizers of the preceding NUG meeting: Roberta Boucher, David Dean, Brian Hingerty, Bill Kramer, Donald Spong and Malcolm Stocks. Likewise thanks to Brian Hingerty and Mike Minkoff for organizing the Users Helping Users events, and to Tom DeBoni, Osni Marques, Jeffrey Squyres and David Turner for the NERSC training classes.

  11. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Final Environmental Impact Statement EIS-0476: ...

  12. Appendix VI Corrective Action Strategy

    National Nuclear Security Administration (NNSA)

    ......... 15 3.0 Underground Test Area............ 13 3-1 Underground Test Area Corrective Action ...

  13. EA-1628: Construction and Operation of a Proposed Lignocellulosic Biorefinery, Emmetsburg, Iowa

    Broader source: Energy.gov [DOE]

    This EA evaluated the potential environmental impacts of a DOE proposal to provide financial assistance (the Proposed Action) to POET Project LIBERTY, LLC (POET) for the construction and operation...

  14. Unsolicited Proposals | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Unsolicited Proposals Unsolicited Proposals The Department of Energy's (DOE's) central point of receipt for all Unsolicited Proposals is the National Energy Technology Laboratory ...

  15. GaNPAs Solar Cells that Can Be Lattice-Matched to Silicon

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; McMahon, W. E.; Ptak, A. J.; Kibbler, A. E.; Olson, J. M.; Kurtz, S.; Kramer, C.; Young, M.; Duda, A.; Reedy, R. C.; Keyes, B. M.; Dippo, P.; Metzger, W. K.

    2003-05-01

    III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We have proposed the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct bandgaps in the range of 1.5 to 2.0 eV. We have demonstrated the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and shown improvements in material quality by reducing carbon and hydrogen impurities through optimization of growth conditions. We have achieved quantum efficiencies (QE) in these cells as high as 60% and PL lifetimes as high as 3.0 ns.

  16. Proposed Drill Sites

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Lane, Michael

    Proposed drill sites for intermediate depth temperature gradient holes and/or deep resource confirmation wells. Temperature gradient contours based on shallow TG program and faults interpreted from seismic reflection survey are shown, as are two faults interpreted by seismic contractor Optim but not by Oski Energy, LLC.

  17. Proposed Drill Sites

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Lane, Michael

    2013-06-28

    Proposed drill sites for intermediate depth temperature gradient holes and/or deep resource confirmation wells. Temperature gradient contours based on shallow TG program and faults interpreted from seismic reflection survey are shown, as are two faults interpreted by seismic contractor Optim but not by Oski Energy, LLC.

  18. EIS-0195: Remedial Actions at Operable Unit 4, Fernald Environmental Management Project, Fernald, Ohio

    Broader source: Energy.gov [DOE]

    This EIS evaluates the potential environmental impacts of a proposal to conduct remedial action at Operable Unit 4 at the Fernald Environmental Management Project.

  19. Carrier quenching in InGaP/GaAs double heterostructures

    SciTech Connect (OSTI)

    Wells, Nathan P. Driskell, Travis U.; Hudson, Andrew I.; LaLumondiere, Stephen D.; Lotshaw, William T.; Forbes, David V.; Hubbard, Seth M.

    2015-08-14

    Photoluminescence measurements on a series of GaAs double heterostructures demonstrate a rapid quenching of carriers in the GaAs layer at irradiance levels below 0.1 W/cm{sup 2} in samples with a GaAs-on-InGaP interface. These results indicate the existence of non-radiative defect centers at or near the GaAs-on-InGaP interface, consistent with previous reports showing the intermixing of In and P when free As impinges on the InGaP surface during growth. At low irradiance, these defect centers can lead to sub-ns carrier lifetimes. The defect centers involved in the rapid carrier quenching can be saturated at higher irradiance levels and allow carrier lifetimes to reach hundreds of nanoseconds. To our knowledge, this is the first report of a nearly three orders of magnitude decrease in carrier lifetime at low irradiance in a simple double heterostructure. Carrier quenching occurs at irradiance levels near the integrated Air Mass Zero (AM0) and Air Mass 1.5 (AM1.5) solar irradiance. Additionally, a lower energy photoluminescence band is observed both at room and cryogenic temperatures. The temperature and time dependence of the lower energy luminescence is consistent with the presence of an unintentional InGaAs or InGaAsP quantum well that forms due to compositional mixing at the GaAs-on-InGaP interface. Our results are of general interest to the photovoltaic community as InGaP is commonly used as a window layer in GaAs based solar cells.

  20. Proposed environmental remediation at Argonne National Laboratory, Argonne, Illinois

    SciTech Connect (OSTI)

    1997-05-01

    The Department of Energy (DOE) has prepared an Environmental Assessment evaluating proposed environmental remediation activity at Argonne National Laboratory-East (ANL-E), Argonne, Illinois. The environmental remediation work would (1) reduce, eliminate, or prevent the release of contaminants from a number of Resource Conservation and Recovery Act (RCRA) Solid Waste Management Units (SWMUs) and two radiologically contaminated sites located in areas contiguous with SWMUs, and (2) decrease the potential for exposure of the public, ANL-E employees, and wildlife to such contaminants. The actions proposed for SWMUs are required to comply with the RCRA corrective action process and corrective action requirements of the Illinois Environmental Protection Agency; the actions proposed are also required to reduce the potential for continued contaminant release. Based on the analysis in the EA, the DOE has determined that the proposed action does not constitute a major federal action significantly affecting the quality of the human environment within the meaning of the National Environmental Policy Act of 1969 (NEPA). Therefore, the preparation of an Environmental Impact Statement is not required.

  1. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J. Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y.

    2014-09-08

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  2. Oxidation of ultrathin GaSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  3. Oxidation of ultrathin GaSe

    SciTech Connect (OSTI)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  4. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  5. Zinc blende GaAs films grown on wurtzite GaN/sapphire templates

    SciTech Connect (OSTI)

    Chaldyshev, V.V.; Nielsen, B.; Mendez, E.E.; Musikhin, Yu.G.; Bert, N.A.; Ma, Zh.; Holden, Todd

    2005-03-28

    1-{mu}m-thick zinc-blende GaAs (111) films were grown by molecular-beam epitaxy on wurtzite GaN/sapphire (0001) templates. In spite of a {approx}20% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesion and their surface had a larger mirror-like area with an average surface roughness of 10 nm. Transmission electron microscopy revealed a flat and abrupt epitaxial GaAs/GaN interface with some nanocavities and a large number of dislocations. Reasonably good crystalline quality of the GaAs films was confirmed by Raman characterization. Spectroscopic ellipsometry showed sharp interference fringes and characteristic parameters in the range of 0.75-5.3 eV. Photoluminescence study revealed extended band tails and dominance of non-radiative carrier recombination.

  6. request for proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    request for proposals - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Energy Defense Waste Management Programs Advanced

  7. Proposed Rules IV. Conclusion

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    686 Federal Register / Vol. 81, No. 44 / Monday, March 7, 2016 / Proposed Rules IV. Conclusion For the reasons cited in this document, the NRC is denying PRM- 50-106. The NRC is denying this petition because the current regulations already address environmental qualification in both mild and design basis event conditions of electrical equipment located both inside and outside of the containment building that is important to safety, and the petitioners did not provide significant new or

  8. Princeton Plasma Physics Lab - General Atomics (GA)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http:www.pppl.govnode1132

  9. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash Biswas, Dhrubes

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  10. SAVEnergy Action Plans

    SciTech Connect (OSTI)

    Mayo, K.; Westby, R.; deMonsabert, S.; Ginsberg, M.

    1994-04-01

    The Department of Energy`s Federal Energy Management Program (FEMP) is charged with carrying out key sections of EPACT and Executive Order 12903, to make the Federal government operate more efficiently. A congressionally mandated energy and water conservation audit program is one component of this growing DOE program. This paper traces the SAVEnergy Action Plan program throughout its development from (1) identifying projects and Agency champions, (2) establishing a protocol and fitting auditors into the program, (3) developing a data base to track the audits and measure their success, and (4) evaluating the process, learning from mistakes, and charting and transferring successes. A major tenet of the SAVEnergy program is to proactively prescreen all audit activities to ensure that -- where audits are done and Action Plans completed -- projects will be done.

  11. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  12. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Liu, Wei; Ju, Zhengang; Tan, Swee Tiam; Ji, Yun; Kyaw, Zabu; Zhang, Xueliang; Wang, Liancheng; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2014-07-21

    In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate the quantum confined Stark effect (QCSE), caused due to strong polarization induced electric field, through spatially confining electrons and holes in small recombination volumes. However, this inevitably increases the carrier density in quantum wells, which in turn aggravates the Auger recombination, since the Auger recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells with the InN composition linearly grading along the growth orientation in LED structures suppressing the Auger recombination and the QCSE simultaneously. Theoretically, the physical mechanisms behind the Auger recombination suppression are also revealed. The proposed LED structure has experimentally demonstrated significant improvement in optical output power and efficiency droop, proving to be an effective solution to this important problem of Auger recombination.

  13. Remedial Action Performed

    Office of Legacy Management (LM)

    Aliquippa Forge Site in Aliquippa, Pennsylvania Department of Energy Former Sites Restoration Division Oak Ridge Operations Office November 1996 CERTIFICATION DOCKE.~ FOR THE REMEDIAL ACTION PERFORMED AT THE ALIQUIPPA FORGE SITE IN ALIQUIPPA, PENNSYLVANIA NOVEMBER 1996 Prepared for . UNITED STATES DEPARTMENT OF ENERGY Oak Ridge Operations Office Under Contract No. DE-AC05-9 1 OR2 1949 Bechtel National, Inc. Oak Ridge, Tennessee Bechtel Job No. 14501 CONTENTS Page FIGURES v . . . . . . . . . . .

  14. Remedial Action Performed

    Office of Legacy Management (LM)

    Baker and Williams Warehouses Site in New York, New York, 7997 - 7993 Department of Energy Former Sites Restoration Division Oak Ridge Operations Office November 7 995 CERTIFICATION DOCKET FOR THE REMEDIAL ACTION PERFORMED AT THE BAKER AND WILLIAMS WAREHOUSES SITE IN NEW YORK, NEW YORK, 1991-1993 NOVEMBER 1995 Prepared for United States Department of Energy Oak Ridge Operations Office Under Contract No. DE-AC05-910R21949 BY Bechtel National, Inc. Oak Ridge, Tennessee Bechtel Job No. 14501 __

  15. Remedial Action Performed

    Office of Legacy Management (LM)

    Alba Craft Laboratory and Vicinity Properties Site in Oxford, Ohio C Department of Energy Former Sites Restoration Division Oak Ridge Operations Office January 1997 $$@T Op% 3 @!B . i~d!l Ab Printed on recycled/recyclable paper. CERTIFICATION DOCKET FOR THE REMEDIAL ACTION PERFORMED AT THE FORMER ALBA CRAFT LABORATORY AND VICINITY PROPERTIES SITE IN OXFORD, OHIO JANUARY 1997 Prepared for United States Department of Energy Oak Ridge Operations Office Under Contract No. DE-AC0591 OR2 1949 Bechtel

  16. Interim Action Determination

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Interim Action Determination Processing of Plutonium Materials from the DOE Standard 3013 Surveillance Program in H-Canyon at the Savannah River Site The Department of Energy (DOE) is preparing the Surplus Plutonium Disposition Supplemental Environmental Impact Statement (SPD SEIS, DOE/EIS-0283-S2). DOE is evaluating alternatives for disposition of non-pit plutonium that is surplus to the national security needs of the United States. Although the Deputy Secretary of Energy approved Critical

  17. Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

    SciTech Connect (OSTI)

    Wang, M.; Wadley, P.; Campion, R. P.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L.; Charlton, T. R.; Kinane, C. J.; Langridge, S.

    2015-08-07

    We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

  18. CONVENTION ON SUPPLEMENTARY COMPENSATION NOTICE OF PROPOSED RULEMAKING |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy After a regulatory action has been completed, Executive Order 12866 requires agencies to identify the substantive changes between the draft submitted to Office of Information and Regulatory Affairs (OIRA) for review and the action subsequently announced, and to identify those changes made at the suggestions or recommendation of OIRA. CSC NOPR Compare (3.91 MB) More Documents & Publications CONVENTION ON SUPPLEMENTARY COMPENSATION NOTICE OF PROPOSED RULEMAKING Changes

  19. Accelerated aging of GaAs concentrator solar cells

    SciTech Connect (OSTI)

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  20. Corrective Action Plan for Corrective Action Unit 417: Central Nevada Test Area Surface, Nevada

    SciTech Connect (OSTI)

    K. Campbell

    2000-04-01

    This Corrective Action Plan provides methods for implementing the approved corrective action alternative as provided in the Corrective Action Decision Document for the Central Nevada Test Area (CNTA), Corrective Action Unit (CAU) 417 (DOE/NV, 1999). The CNTA is located in the Hot Creek Valley in Nye County, Nevada, approximately 137 kilometers (85 miles) northeast of Tonopah, Nevada. The CNTA consists of three separate land withdrawal areas commonly referred to as UC-1, UC-3, and UC-4, all of which are accessible to the public. CAU 417 consists of 34 Corrective Action Sites (CASs). Results of the investigation activities completed in 1998 are presented in Appendix D of the Corrective Action Decision Document (DOE/NV, 1999). According to the results, the only Constituent of Concern at the CNTA is total petroleum hydrocarbons (TPH). Of the 34 CASs, corrective action was proposed for 16 sites in 13 CASs. In fiscal year 1999, a Phase I Work Plan was prepared for the construction of a cover on the UC-4 Mud Pit C to gather information on cover constructibility and to perform site management activities. With Nevada Division of Environmental Protection concurrence, the Phase I field activities began in August 1999. A multi-layered cover using a Geosynthetic Clay Liner as an infiltration barrier was constructed over the UC-4 Mud Pit. Some TPH impacted material was relocated, concrete monuments were installed at nine sites, signs warning of site conditions were posted at seven sites, and subsidence markers were installed on the UC-4 Mud Pit C cover. Results from the field activities indicated that the UC-4 Mud Pit C cover design was constructable and could be used at the UC-1 Central Mud Pit (CMP). However, because of the size of the UC-1 CMP this design would be extremely costly. An alternative cover design, a vegetated cover, is proposed for the UC-1 CMP.

  1. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5??10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  2. October is Energy Action Month

    Broader source: Energy.gov [DOE]

    President Obama declared October Energy Action Month, and we are sharing tips about how you can save energy.

  3. VIOLENT FRAMES IN ACTION

    SciTech Connect (OSTI)

    Sanfilippo, Antonio P.; McGrath, Liam R.; Whitney, Paul D.

    2011-11-17

    We present a computational approach to radical rhetoric that leverages the co-expression of rhetoric and action features in discourse to identify violent intent. The approach combines text mining and machine learning techniques with insights from Frame Analysis and theories that explain the emergence of violence in terms of moral disengagement, the violation of sacred values and social isolation in order to build computational models that identify messages from terrorist sources and estimate their proximity to an attack. We discuss a specific application of this approach to a body of documents from and about radical and terrorist groups in the Middle East and present the results achieved.

  4. 3RS action plan

    SciTech Connect (OSTI)

    Not Available

    1990-01-01

    The goal of the Solid Waste Interim Steering Committee (SWISC) process is to develop a long-term waste management system for the Greater Toronto Area (GTA), to be in place by 1996, which is environmentally, socially, economically and technically sound. This background report is being released to the public and member Regional Councils to facilitate input to the SWISC planning process. The report documents current reduction, reuse and recycling initiatives in the GTA, identifies opportunities for coordination and collaboration among the GTA communities, and develops an action plan for improving the effectiveness of the reduction, reuse and recycling efforts within the GTA.

  5. Proposed solar two project Barstow, California

    SciTech Connect (OSTI)

    Not Available

    1994-01-01

    This Environmental Assessment (EA) evaluates the environmental consequences of the proposed conversion and operation of the existing Solar One Facility in Daggett, Ca, near the city of Barstow, to a nitrate salt based heat transfer system, Solar Two. The EA also addresses the alternatives of different solar conversion technologies and alternative sites and discusses a no action alternative. A primary objective of the Solar Two Project is to demonstrate the technical and economic feasibility of a solar central receiver power plant using molten salt as the thermal storage and transport fluid medium. If successful, the information gathered from the Solar Two Project could be used to design larger commercial solar power plants.

  6. RCRA corrective action and closure

    SciTech Connect (OSTI)

    Not Available

    1995-02-01

    This information brief explains how RCRA corrective action and closure processes affect one another. It examines the similarities and differences between corrective action and closure, regulators` interests in RCRA facilities undergoing closure, and how the need to perform corrective action affects the closure of DOE`s permitted facilities and interim status facilities.

  7. Semi-automated lab-on-a-chip for dispensing GA-68 radiotracers

    SciTech Connect (OSTI)

    Weinberg, Irving

    2014-03-12

    We solved a technical problem that is hindering American progress in molecular medicine, and restricting US citizens from receiving optimal diagnostic care. Specifically, the project deals with a mother/daughter generator of positron-emitting radiotracers (Ge-68/Ga-68). These generator systems are approved in Europe but cannot be used in the USA, because of safety issues related to possible breakthrough of long-lived Ge-68 (mother) atoms. Europeans have demonstrated abilities of Ga-68-labeled radiotracers to image cancer foci with high sensitivity and specificity, and to use such methods to effectively plan therapy.The USA Food and Drug Administration (FDA) and Nuclear Regulatory Commission (NRC) have taken the position that every patient administration of Ga-68 should be preceded by an assay demonstrated that Ge-68 breakthrough is within acceptable limits. Breakthrough of parent elements is a sensitive subject at the FDA, as evidenced by the recent recall of Rb-82 generators due to inadvertent administrations of Sr-82. Commercially, there is no acceptable rapid method for assaying breakthrough of Ge-68 prior to each human administration. The gamma emissions of daughter Ga-68 have higher energies than the parent Ge-68, so that the shielding assays typically employed for Mo-99/Tc-99m generators cannot be applied to Ga-68 generators. The half-life of Ga-68 is 68 minutes, so that the standard 10-half-life delay (used to assess breakthrough in Sr-82/Rb-82 generators) cannot be applied to Ga-68 generators. As a result of the aforementioned regulatory requirements, Ga-68 generators are sold in the USA for animal use only.The American clinical communitys inability to utilize Ga-68 generators impairs abilities to treat patients domestically, and puts the USA at a disadvantage in developing exportable products. The proposed DOE project aimed to take advantage of recent technological advances developed for lab-on-a-chip (LOC) applications. Based on our experiences

  8. Oklahoma State University proposed Advanced Technology Research Center. Environmental Assessment

    SciTech Connect (OSTI)

    1995-06-01

    The Department of Energy (DOE) has prepared an Environmental Assessment (EA) evaluating the construction and equipping of the proposed Advanced Technology Research Center (ATRC) at Oklahoma State University (OSU) in Stillwater, Oklahoma. Based on the analysis in the EA, the DOE has determined that the proposed action does not constitute a major federal action significantly affecting the quality of the human environment within the meaning of the National Environmental Policy Act (NEPA) of 1969. Therefore, the preparation of an Environmental Impact Statement is not required.

  9. GaP ring-like nanostructures on GaAs (100) with In{sub 0.15}Ga{sub 0.85}As compensation layers

    SciTech Connect (OSTI)

    Prongjit, Patchareewan Pankaow, Naraporn Boonpeng, Poonyasiri Thainoi, Supachok Panyakeow, Somsak Ratanathammaphan, Somchai

    2013-12-04

    We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In{sub 0.15}Ga{sub 0.85}As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In{sub 0.15}Ga{sub 0.85}As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In{sub 0.15}Ga{sub 0.85}As layer thickness.

  10. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  11. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  12. Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)

    SciTech Connect (OSTI)

    Bremner, S. P.; Ban, K.-Y.; Faleev, N. N.; Honsberg, C. B.; Smith, D. J.

    2013-09-14

    We describe InAs quantum dot creation in InAs/GaAsSb barrier structures grown on GaAs (001) wafers by molecular beam epitaxy. The structures consist of 20-nm-thick GaAsSb barrier layers with Sb content of 8%, 13%, 15%, 16%, and 37% enclosing 2 monolayers of self-assembled InAs quantum dots. Transmission electron microscopy and X-ray diffraction results indicate the onset of relaxation of the GaAsSb layers at around 15% Sb content with intersected 60° dislocation semi-loops, and edge segments created within the volume of the epitaxial structures. 38% relaxation of initial elastic stress is seen for 37% Sb content, accompanied by the creation of a dense net of dislocations. The degradation of In surface migration by these dislocation trenches is so severe that quantum dot formation is completely suppressed. The results highlight the importance of understanding defect formation during stress relaxation for quantum dot structures particularly those with larger numbers of InAs quantum-dot layers, such as those proposed for realizing an intermediate band material.

  13. Proposal Types | Advanced Photon Source

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    from anywhere in the world to use the APS through a competitive access process. CAT Member and Staff Proposals Proposals from members and staff of Collaborative Access...

  14. Technical Proposal Disclosure Policy - ITER

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposal Disclosure Policy - ITER Pursuant to this solicitation, UT-Battelle will treat confidential proposal information as such and will disclose such information on a need to ...

  15. Analysis of the carbon-related 'blue' luminescence in GaN

    SciTech Connect (OSTI)

    Armitage, R.; Yang, Q.; Weber, E.R.

    2004-09-24

    The properties of a broad 2.86 eV photoluminescence band in carbon-doped GaN were studied as a function of C-doping level, temperature, and excitation density. The results are consistent with a C{sub Ga}-C{sub N} deep donor-deep acceptor recombination mechanism as proposed by Seager et al. For GaN:C grown by molecular-beam epitaxy (MBE) the 2.86 eV band is observed in Si co-doped layers exhibiting high n-type conductivity as well as in semi-insulating material. For low excitation density (4 W/cm{sup 2}) the 2.86 eV band intensity decreases as a function of cw-laser exposure time over a period of many minutes. The transient behavior is consistent with a model based on carrier diffusion and charge trapping-induced Coulomb barriers. The temperature dependence of the blue luminescence below 150 K was different for carbon-contaminated GaN grown by metalorganic vapor phase epitaxy (MOVPE) compared to C-doped MBE GaN.

  16. Sodium dichromate expedited response action assessment

    SciTech Connect (OSTI)

    Not Available

    1993-09-01

    The US Environmental Protection Agency (EPA) and Washington Department of Ecology (Ecology) recommended that the US Department of Energy (DOE) perform an expedited response action (ERA) for the Sodium Dichromate Barrel Disposal Landfill. The ERA lead regulatory agency is Ecology and EPA is the support agency. The ERA was categorized as non-time-critical, which required preparation of an engineering evaluation and cost analysis (EE/CA). The EE/CA was included in the ERA proposal. The EE/CA is a rapid, focused evaluation of available technologies using specific screening factors to assess feasibility, appropriateness, and cost. The ERA goal is to reduce the potential for any contaminant migration from the landfill to the soil column, groundwater, and Columbia River. Since the Sodium Dichromate Barrel Disposal Landfill is the only waste site within the operable unit, the removal action may be the final remediation of the 100-IU-4 Operable Unit. This ERA process started in March 1992. The ERA proposal went through a parallel review process with Westinghouse Hanford Company (WHC), DOE Richland Operations (RL), EPA, Ecology, and a 30-day public comment period. Ecology and EPA issued an Action Agreement Memorandum in March 1993 (Appendix A). The memorandum directed excavation of all anomalies and disposal of the collected materials at the Hanford Site Central Landfill. Primary field activities were completed by the end of April 1993. Final waste disposal of a minor quantity of hazardous waste was completed in July 1993.

  17. EA-2006: Finding of No Significant Impact and Mitigation Action Plan |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Finding of No Significant Impact and Mitigation Action Plan EA-2006: Finding of No Significant Impact and Mitigation Action Plan Columbia Estuary Ecosystem Restoration Program Bonneville Power Administration issued a FONSI and a floodplain and wetland statement of findings for a proposed program of actions to help restore ecological structure, function, and biodiversity within the Columbia River estuary. The mitigation measures listed in the Mitigation Action Plan and

  18. Proposed Remedial Action Plan: Proposed Plan for Remedial Action at the Quarry Residuals Operable Unit of the Weldon Spring Site. DOE/OR/21548-724

    Office of Legacy Management (LM)

  19. DOE Institutes Enforcement Action against 4 Showerhead Manufacturers for

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Failure to Certify 116 Products | Department of Energy Institutes Enforcement Action against 4 Showerhead Manufacturers for Failure to Certify 116 Products DOE Institutes Enforcement Action against 4 Showerhead Manufacturers for Failure to Certify 116 Products January 28, 2010 - 1:49pm Addthis WASHINGTON DC - The Office of General Counsel has issued Notices of Proposed Civil Penalty to Zoe Industries, Altmans Products LLC, EZ-FLO International, and Watermark Designs, Ltd. for failing to

  20. Guam Energy Action Plan

    SciTech Connect (OSTI)

    Conrad, M. D.; Ness, J. E.

    2013-07-01

    Describes the four near-term strategies selected by the Guam Energy Task Force during action planning workshops conducted in March 2013, and outlines the steps being taken to implement those strategies. Each strategy addresses one of the energy sectors identified in the earlier Guam strategic energy plan as being an essential component of diversifying Guam's fuel sources and reducing fossil energy consumption 20% by 2020. The four energy strategies selected are: (1) expanding public outreach on energy efficiency and conservation, (2) establishing a demand-side management revolving loan program, (3) exploring waste-to-energy options, and (4) influencing the transportation sector via anti-idling legislation, vehicle registration fees, and electric vehicles.

  1. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  2. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  3. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  4. Emergencies and Emergency Actions | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and Emergency Actions Emergencies and Emergency Actions Selected documents on the topic of Emergencies and Emergency Actions under NEPA. May 12, 2010 Memorandum for Heads of...

  5. Ecology Action: Small Market Advanced Retrofit Transformation...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Ecology Action: Small Market Advanced Retrofit Transformation Program (SMART) Ecology Action: Small Market Advanced Retrofit Transformation Program (SMART) Ecology Action: Small ...

  6. Climate Action Tracker | Open Energy Information

    Open Energy Info (EERE)

    References: Climate Action Tracker1 "This "Climate Action Tracker" is an independent science-based assessment, which tracks the emission commitments and actions of countries. The...

  7. On the Modified Palatini Action Coupled to Fermionic Matter

    SciTech Connect (OSTI)

    Lagraa, Meriem Hadjer

    2010-10-31

    From the generalized Palatini's action proposed recently in [1], we show that we can obtain the standard effective action of the theory of Einstein-Cartan coupled to the fermionic matter without the usual current-current interaction. Therefore, an effective action which is free from the Barbero-Immirzi parameter [2] and the non-vanishing torsion resulting from the presence of the minimal coupling of fermionic matter. This establishes the equivalence between the theories of general relativity and Einstein-Cartan minimally coupled to fermions [3].

  8. Corrective Action Investigation Plan for Corrective Action Unit...

    Office of Legacy Management (LM)

    ... Number Title Page 1-1 Process Flow Diagram for Underground Test Area Corrective Action ... NPDES National Pollutant Discharge Elimination System NTS Nevada Test Site pdf Probability ...

  9. Evaluation Criteria for PDIL Proposal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Criteria for PDIL Proposal The selection/decision criteria used by the NCPV Business Development Team are the following: 1. Quality and Relevance of the Proposed Technical Plan (30%) * Technology impact with industry and likelihood of success. Demonstrated benefits of success to both the proposer and NREL to meet the DOE SunShot goals. * Proposed task descriptions and time line. Clear demonstration of entrance and exit strategies in the PDIL. * Extent to which the Proposer and NREL can rapidly

  10. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  11. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  12. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  13. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; Worschech, L.; Grutzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  14. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmoreto higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.less

  15. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

    SciTech Connect (OSTI)

    Li, Yi; Liu, Bin E-mail: rzhang@nju.edu.cn; Zhang, Rong E-mail: rzhang@nju.edu.cn; Xie, Zili; Zhuang, Zhe; Dai, JiangPing; Tao, Tao; Zhi, Ting; Zhang, Guogang; Chen, Peng; Ren, Fangfang; Zhao, Hong; Zheng, Youdou

    2015-04-21

    Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620?nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%53% as compared to that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.

  16. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect (OSTI)

    Lekhal, K.; Damilano, B. De Mierry, P.; Venngus, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570600?nm) emitting In{sub x}Ga{sub 1?x}N/Al{sub y}Ga{sub 1?y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1?x}N QWs by the Al{sub y}Ga{sub 1?y}N layers, respectively.

  17. Environmental assessment of remedial action at the Maybell uranium mill tailings site near Maybell, Colorado: Revision 2

    SciTech Connect (OSTI)

    Not Available

    1994-11-01

    The purpose of this environmental assessment (EA) is to evaluate the environmental impacts resulting from remedial action at the Maybell uranium mill tailings site near Maybell, Colorado. A biological assessment and a floodplain/wetlands assessment are included as part of this EA. This report and attachments describe the proposed action, affected environment, and environmental impacts associated with the proposed remedial action, including impacts to threatened and endangered species listed or proposed for listing by the US Fish and Wildlife Service (FWS).

  18. Environmental assessment of remedial action at the Maybell Uranium Mill Tailings Site near Maybell, Colorado. Revision 1

    SciTech Connect (OSTI)

    Not Available

    1994-04-01

    The purpose of this environmental assessment (EA) is to evaluate the environmental impacts resulting from remedial action at the Maybell uranium mill tailings site near Maybell, Colorado. A biological assessment (Attachment 1) and a floodplain/wetlands attachments describe the proposed action, affected environment, and environmental impacts associated with the proposed remedial action, including impacts to threatened and endangered species listed or proposed for listing by the US Fish and Wildlife Service (FWS).

  19. DOE Withdraws Proposed Rulemaking (Test Procedure) and Proposed Coverage

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Determination (Energy Conservation Standard) for Set-Top Boxes | Department of Energy Withdraws Proposed Rulemaking (Test Procedure) and Proposed Coverage Determination (Energy Conservation Standard) for Set-Top Boxes DOE Withdraws Proposed Rulemaking (Test Procedure) and Proposed Coverage Determination (Energy Conservation Standard) for Set-Top Boxes December 23, 2013 - 12:00am Addthis The Department of Energy (DOE) has issued pre-publication Federal Register notices withdrawing the notice

  20. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M.; Giddings, A. D.; Prosa, T. J.; Larson, D. J.; Mano, T.

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  1. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8??10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  2. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgl Okur; Akdemir, Hande Gnay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  3. International Program Action Table - October 2012 | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Communication & Engagement International Programs International Program Action Table - October 2012 International Program Action Table - October 2012 International Program ...

  4. Environmental Management Headquarters Corrective Action Plan...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    II Environmental Management Headquarters Corrective Action Plan - Radiological Release ... actions for addressing Office of Environmental Management (EM) Headquarters (HQ) ...

  5. On-sun concentrator performance of GaInP/GaAs tandem cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Sinha, K.; McMahon, W.E.; Olson, J.M.

    1996-05-01

    The GaInP/GaAs concentrator device has been adapted for and tested in a prototype {open_quotes}real-world{close_quotes} concentrator power system. The device achieved an on-sun efficiency of 28% {+-} 1% in the range of approximately 200-260 suns with device operating temperatures of 38{degrees}C to 42{degrees}C. The authors discuss ways of further improving this performance for future devices.

  6. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  7. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Hajłasz, M.; Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S.; Gravesteijn, D. J.; Rietveld, F. J. R.; Schmitz, J.

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  8. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  9. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  10. Determining the band alignment of TbAs:GaAs and TbAs:In0.53Ga0.47As

    SciTech Connect (OSTI)

    Bomberger, Cory C.; Vanderhoef, Laura R.; Rahman, Abdur; Shah, Deesha; Chase, D. Bruce; Taylor, Antoinette J.; Azad, Abul K.; Doty, Matthew F.; Zide, Joshua M. O.

    2015-09-10

    Here, we propose and systematically justify a band structure for TbAs nanoparticles in GaAs and In0.53Ga0.47As host matrices. Moreover, fluence-dependent optical-pump terahertz-probe measurements suggest the TbAs nanoparticles have a band gap and provide information on the carrier dynamics, which are determined by the band alignment. Spectrophotometry measurements provide the energy of optical transitions in the nanocomposite systems and reveal a large blue shift in the absorption energy when the host matrix is changed from In0.53Ga0.47As to GaAs. Finally, Hall data provides the approximate Fermi level in each system. From this data, we deduce that the TbAs:GaAs system forms a type I (straddling) heterojunction and the TbAs:In0.53Ga0.47As system forms a type II (staggered) heterojunction.