Powered by Deep Web Technologies
Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Environmental Assessment - Proposed Actions  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsing Zirconia NanoparticlesSmartAffects theEnvironment,EH&S682

2

Riverland expedited response action proposal  

SciTech Connect (OSTI)

The US Environmental Protection Agency (EPA) and Washington Department of Ecology (Ecology) recommended that the US Department of Energy (DOE) prepare an expedited response action (ERA) for the Riverland Railroad Car Wash Pit and the 600 Area Army Munitions Burial Site. A non-time-critical ERA proposal includes preparation of an engineering evaluation/cost analysis (EE/CA) section. The EE/CA is a rapid, focused evaluation of available technologies using specific screening factors to assess feasibility, appropriateness, and cost. The ERA proposal will undergo reviews by Westinghouse Hanford Company (WHC), DOE, EPA, Ecology, and the public. Ecology and EPA will issue an Action Agreement Memorandum after resolution of all review comments. The, memorandum will authorize remediation activities. The ERA goal is to reduce the potential for any contaminant migration to the soil column, groundwater, and Columbia River. The ERA may be the final remediation of the 100-IU-1 Operable Unit. A No Action Record of Decision may be issued after cleanup completion.

Not Available

1993-04-01T23:59:59.000Z

3

Categorical Exclusion Determination Form Proposed Action Title...  

Broader source: Energy.gov (indexed) [DOE]

CountyState): TVN Systems, Inc. (Lawrence, KS); Vanderbilt University (Nashville, TN); University of Kansas (Lawrence, KS) Proposed Action Description: Funding will support...

4

Categorical Exclusion Determination Form Proposed Action Title...  

Broader source: Energy.gov (indexed) [DOE]

LocationCs) CCityCountyState): Bosch RTC (Palo Alto, CA); Cobasys, LLC (Orion, MI); University of California - San Diego (San Diego, CA) Proposed Action Description: Funding...

5

Categorical Exclusion Determination Form Proposed Action Title...  

Broader source: Energy.gov (indexed) [DOE]

Projects Agency - Energy LocationCs) CCityCountyState): Niskayuna, NY; Ann Arbor, MI; Dearborn, MI Proposed Action Description: Funding will support efforts to develop a a...

6

Categorical Exclusion Determination Form Proposed Action Title...  

Broader source: Energy.gov (indexed) [DOE]

Research Projects Agency - Energy LocationCs) CCityCountyState): Dearborn, MI; Albuquerque, NM; College Station, TX Proposed Action Description: Funding will support...

7

Categorical Exclusion (CX) Determination Proposed Action: Elliot...  

Broader source: Energy.gov (indexed) [DOE]

Elliot 115kV43.8kV Transmission Substation Construction and Elliot 43.8kV Transmission Line. Description of Proposed Action: The Central Power Electric Cooperative (Central Power)...

8

N Springs expedited response action proposal  

SciTech Connect (OSTI)

Since signing the Hanford Federal Facility Agreement and Consent Order (Tri-Party Agreement) in 1989, the parties to the agreement have recognized the need to modify the approach to conducting investigations, studies, and cleanup actions at Hanford. To implement this approach, the parties have jointly developed the Hanford Past-Practice Strategy. The strategy defines a non-time-critical expedited response action (ERA) as a response action ``needed to abate a threat to human health or welfare or the environment where sufficient time exists for formal planning prior to initiation of response. In accordance with the past-practice strategy, DOE proposes to conduct an ERA at the N Springs, located in the Hanford 100 N Area, to substantially reduce the strontium-90 transport into the river through the groundwater pathway. The purpose of this ERA proposal is to provide sufficient information to select a preferred alternative at N Springs. The nature of an ERA requires that alternatives developed for the ERA be field ready; therefore, all the technologies proposed for the ERA should be capable of addressing the circumstances at N Springs. A comparison of these alternatives is made based on protectiveness, cost, technical feasibility, and institutional considerations to arrive at a preferred alternative. Following the selection of an alternative, a design phase will be conducted; the design phase will include a detailed look at design parameters, performance specifications, and costs of the selected alternative. Testing will be conducted as required to generate design data.

Not Available

1994-01-01T23:59:59.000Z

9

Implementation Proposal for the National Action Plan on Demand...  

Broader source: Energy.gov (indexed) [DOE]

and the Department of Energy. Implementation Proposal for the National Action Plan on Demand Response - July 2011 More Documents & Publications National Action Plan on Demand...

10

Categorical Exclusion Determination Form Proposed Action Title...  

Broader source: Energy.gov (indexed) [DOE]

can be regenerated electrically for use in future high efficiency electric vehicle (EV) heat pumps. Proposed work consists of indoor laboratory-based research and development,...

11

Chapter 2 - Proposed Action and Alternatives  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed New Substation SitesStanding FriedelIron-Sulfur3-1 November 2012 Words2-1 November

12

Chapter 4 Proposed Action and Alternatives  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed New Substation SitesStanding FriedelIron-Sulfur3-1 November 2012Chapter4-1 November

13

Management of corrective action wastes pursuant to proposed Subpart S  

SciTech Connect (OSTI)

Under Section 3004(u) of the Resource Conservation and Recovery Act (RCRA), owners/operators of permitted or interim status treatment, storage, and disposal facilities (TSDFs) are required to perform corrective action to address releases of hazardous waste or hazardous constituents from solid waste management units (SWMUs). On July 27, 1990, the Environmental Protection Agency (EPA) proposed specific corrective action requirements under Part 264, Subpart S of Title 40 of the code of Federal Regulations (CFR). One portion of this proposed rule, addressing requirements applicable to corrective action management units (CAMUs) and temporary units (TUs), was finalized on February 16, 1993 (58 FR 8658 et seq.). (CAMUs and TUs are RCRA waste management units that are specifically designated for the management of corrective action wastes). Portions of the proposed Subpart S rule that address processes for the investigation and cleanup of releases to environmental media have not yet been finalized. EPA and authorized State agencies, however, are currently using the investigation and cleanup procedures of the proposed rule as a framework for implementation of RCRA`s corrective action requirements. The performance of corrective action cleanup activities generates wastes that have to be characterized and managed in accordance with applicable RCRA requirements. This Information Brief describes these requirements. It is one of a series of information Briefs on RCRA Corrective Action.

Not Available

1995-02-01T23:59:59.000Z

14

Property:NEPA Proposed Action | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revisionEnvReviewNonInvasiveExploration Jump to:FieldProceduresFY JumpThisModification dateProposed Action Jump

15

CEQ Guidance on the Application of NEPA to Proposed Federal Actions...  

Energy Savers [EERE]

Effects The purpose of this guidance is to clarify the applicability of the National Environmental Policy Act (NEPA) to proposed federal actions in the United States,...

16

CATEGORICAL EXCLUSION (CX) DETERMINATION BRIEF DESCRIPTION OF PROPOSED ACTION:  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed New Substation Sites Proposed Route Segments (notCAMDL20-000'IU "~I :~~~r;::::N

17

CATEGORICAL EXCLUSION (CX) DETERMINATION BRIEF DESCRIPTION OF PROPOSED ACTION:  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed New Substation Sites Proposed Route Segments (notCAMDL20-000'IU "~I

18

CATEGORICAL EXCLUSION (CX) DETERMINATION BRIEF DESCRIPTION OF PROPOSED ACTION:  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed New Substation Sites Proposed Route Segments (notCAMDL20-000'IU "~ICATEGORICAL

19

Expedited response action proposal for 316-5 process trenches  

SciTech Connect (OSTI)

A summary of the evaluation of remedial alternatives for the 300 Area Process Trench sediment removal at Hanford is presented. Based on the preliminary technology screening, screening factors, and selection criteria the preferred alternative for the 300 Area Process Trench is to remove and interim stabilize the sediments within the fenced area of the process trenches. This alternative involves proven technologies that are applied easily at this mixed waste site. This alternative removes and isolates contaminated sediments from the active portion of the trenches allowing continued used of the trenches until an inspection and treatment facility is constructed. The alternative does not incorporate any materials or actions that preclude consideration of a technology for final remediation of the operable unit. The estimated initial and annual costs would enable this alternative to be implemented under the guidelines for an EPA- funded ERA ($2 million). Implementation of the alternative can be accomplished with trained personnel using familiar procedures to provide a safe operation that accomplishes the objective for removing a potential source of contamination, thereby reducing potential environmental threat to groundwater. 18 refs., 5 figs., 9 tabs.

Not Available

1991-07-01T23:59:59.000Z

20

RCRA corrective action definitions under Subpart F and proposed Subpart S. RCRA Information Brief  

SciTech Connect (OSTI)

If EPA or the authorized State determines there has been a release of a hazardous waste or hazardous waste constituent at an interim status facility, RCRA Section 3008(h)(1) authorizes EPA or the authorized State to issue an administrative order requiring corrective action or other measures. There are no regulations specifically addressing corrective action orders under Subpart F. However, while an interim status facility is seeking a RCRA permit, the facility is required by 40 CFR 265 Subpart F to monitor ground water and report the results of this monitoring program to the regulatory agency. If a release of a hazardous waste or hazardous waste constituent occurs, the facility may be issued a RCRA Section 3008(h) Order to conduct corrective action. While the proposed Subpart S regulations apply specifically to SWMUs at permitted TSDFs, EPA intends to use similar corrective action requirements at interim status facilities where there has been a release of a hazardous waste or hazardous waste constituent. The specific requirements for corrective action at an interim status facility will be specified in a RCRA Section 3008(h) Order. Alternatively, EPA may compel corrective action under proposed Subpart S through a permit Schedule of Compliance, especially if the permit is expected to be issued in the near term. This information Brief discusses the terminology used in the two corrective action programs and discusses both the proposed Subpart S rule and the final CAMU and TU rule.

Not Available

1994-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Interim Action Proposed Plan for the old radioactive waste burial ground (643-E)  

SciTech Connect (OSTI)

This Interim Action Proposed (IAPP) is issued by the U.S. Department of Energy (DOE), which functions as the lead agency for SRS remedial activities, and with concurrence by the U.S. Environmental Protection Agency (EPA) and the South Carolina Department of Health and Environmental Control (SCDHEC). The purpose of this IAPP is to describe the preferred interim remedial action for addressing the Old Radioactive Waste Burial Ground (ORWBG) unit located in the Burial Ground Complex (BGC) at the Savannah River Site (SRS) in Aiken, South Carolina. On December 21, 1989, SRS was included on the National Priorities List (NPL). In accordance with Section 120 of the Comprehensive Environmental Response, Compensation, and Liability Act (CERCLA), DOE has negotiated a Federal Facility Agreement (FFA, 1993) with EPA and SCDHEC to coordinate remedial activities at SRS. Public participation requirements are listed in Sections 113 and 117 of CERCLA. These requirements include establishment of an Administrative Record File that documents the selection of remedial alternatives and allows for review and comment by the public regarding those alternatives. The SRS Public Involvement Plan (PIP) (DOE, 1994) is designed to facilitate public involvement in the decision-making process for permitting closure, and the selection of remedial alternatives. Section 117(a) of CERCLA, 1980, as amended, requires publication of a notice of any proposed remedial action.

McFalls, S.

1995-12-01T23:59:59.000Z

22

DOE and FERC Jointly Submit Implementation Proposal for The National Action Plan on Demand Response to Congress  

Broader source: Energy.gov [DOE]

The U.S. Department of Energy and the Federal Energy Regulatory Commission (FERC) jointly submitted to Congress a required “Implementation Proposal for The National Action Plan on Demand Response.”

23

[4] G.A. Gilbert: A Survey of the Action of Air on Aqueous Solutions of Starch. Strke 10 (1958), 9599.  

E-Print Network [OSTI]

[4] G.A. Gilbert: A Survey of the Action of Air on Aqueous Solutions of Starch. Stärke 10 (1958.S. Ross and C.W. Wrigley. Royal Australian Chemical Institute, Melbourne 1997, pp. 365­368. [10] J and Rapid Colorimetric Method for the Determination of Amylose in Starch Products. Starch/Stärke 50 (1998

24

Proposals  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for4-16HamadaBaO/Al2O3 leanProposal StudyProposalProposals

25

Review and analysis of proposed EPA groundwater standards for the UMTRA Project. [Uranium Mill Tailings Remedial Action (UMTRA) Project  

SciTech Connect (OSTI)

The Title I groundwater standards for inactive uranium mill tailings sites, which were promulgated on January 5, 1983, by the US Environmental Protection Agency (EPA) for the Uranium Mill Tailings Remedial Action (UMTRA) Project, were remanded to the EPA on September 3, 1985, by the US Tenth Circuit Court of Appeals. The Court instructed the EPA to compile general groundwater standards for all sites. On September 24, 1987, the EPA published proposed standards in response to the remand. This Summary Report includes an evaluation of the potential effects of the proposed EPA groundwater standards on the UMTRA Project as well as a discussion of the DOE's position on the proposed standards. This report is accompanied by a detailed Technical Report and Appendices which provide supporting information and analyses. This Summary Report results from a study undertaken to: determine the impact of the proposed standards on the UMTRA Project; and recommend provisions for the implementation of the final standards that will minimize adverse impact to the conduct of the UMTRA Project while ensuring protection of human health and the environment. Specifically, the following were considered: the flexibility of the proposed standards; interpretations of the proposed standards; the extent of aquifer restoration that may be required to implement the proposed standards at each site; the costs of aquifer restoration; and design changes necessary to meet the standards.

Not Available

1987-10-01T23:59:59.000Z

26

US Department of Energy response to standards for remedial actions at inactive uranium processing sites: Proposed rule  

SciTech Connect (OSTI)

The Title I groundwater standards for inactive uranium mill tailings sites, which were promulgated on January 5, 1983, by the US Environmental Protection Agency (EPA) for the Uranium Mill Tailings Remedial Action (UMTRA) Project, were remanded to the EPA on September 3, 1985, by the US Tenth Circuit Court of Appeals. The Court instructed the EPA to compile general groundwater standards for all Title I sites. On September 24, 1987, the EPA published proposed standards (52FR36000-36008) in response to the remand. This report includes an evaluation of the potential effects of the proposed EPA groundwater standards on the UMTRA Project, as well as a discussion of the DOE's position on the proposed standards. The report also contains and appendix which provides supporting information and cost analyses. In order to assess the impacts of the proposed EPA standards, this report summarizes the proposed EPA standards in Section 2.0. The next three sections assess the impacts of the three parts of the EPA standards: Subpart A considers disposal sites; Subpart B is concerned with restoration at processing sites; and Subpart C addresses supplemental standards. Section 6.0 integrates previous sections into a recommendations section. Section 7.0 contains the DOE response to questions posed by the EPA in the preamble to the proposed standards. 6 refs., 5 figs., 3 tabs.

Not Available

1988-01-29T23:59:59.000Z

27

Environmental Assessment for Conducting Astrophysics and Other Basic Science Experiments - Chapter 2 Proposed Action and Alternatives  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsing Zirconia NanoparticlesSmartAffects theEnvironment,EH&S682405 DOE1-12-1

28

US Department of Energy final response to standards for remedial actions at inactive uranium processing sites; Proposed rule  

SciTech Connect (OSTI)

This document revisits and supplements information and recommendations presented in the January 1988 US Department of Energy (DOE) submission to the US Environmental Protection Agency (EPA) regarding the proposed standards for Title I uranium processing sites (DOE, 1988). The clarifications and comments in this report are based on further DOE investigation, contemplation, and interpretation of the proposed standards. Since the January response, the DOE has undertaken a number of special studies to -investigate, evaluate, focus, and clarify issues relating to the standards. In addition, the Nuclear Regulatory Commission (NRC) has issued a draft technical position outlining its interpretation of the proposed standards and clarifying how the standards will be implemented (NRC, 1988). Some issues presented are based on previous positions, and the original DOE position is restated for reference. Other issues or recommendations are more recent than the January DOE response; therefore, no former position was advanced. The order of presentation reflects the general order of significance to the DOE, specifically in regards to the Uranium Mill Tailings Remedial Action (UMTRA) Project.

Not Available

1988-11-14T23:59:59.000Z

29

Description of Proposed Action  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series to UserProduct: CrudeOffice ofINLNuclear262About UsDepthDerek F RECORD OF

30

Proposal for a second-generation, lattice matched, multiple junction Ga{sub 2}AsSb TPV converter  

SciTech Connect (OSTI)

First order device modeling is used to show that spontaneously ordered Ga{sub 2}AsSb may prove useful in the newly-active field of thermophotovoltaic power generation. Optimal band gaps for single-, double- and triple-junction III-V devices are presented for a range of blackbody emitter temperatures (1000--2000 K), and it is shown that monolithic, current-matched devices may be constructed that are lattice-matched throughout the stack to an underlying InP substrate. Device efficiency, short-circuit current, fill factor, and open-circuit voltage calculations are presented. The power generation capabilities are expected to be substantial due to the proximity of the devices to the thermal radiators. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

Horner, G.S. [Keithley Instruments, Solon Ohio (United States); Coutts, T.J.; Wanlass, M.W. [National Renewable Energy Laboratory, Golden Colorado (United States)

1995-01-05T23:59:59.000Z

31

UMTRA Project remedial action planning and disposal cell design to comply with the proposed EPA (Environmental Protection Agency) standards (40 CFR Part 192)  

SciTech Connect (OSTI)

The Uranium Mill Tailings Remedial Action (UMTRA) Project involves stabilizing 24 inactive uranium mill tailings piles in 10 states. Remedial work must meet standards established by the US Environmental Protection Agency (EPA). Remedial action must be designed and constructed to prevent dispersion of the tailings and other contaminated materials, and must prevent the inadvertent use of the tailings by man. This report is prepared primarily for distribution to parties involved in the UMTRA Project, including the US Nuclear Regulatory Commission (NRC), and states and tribes. It is intended to record the work done by the DOE since publication of the proposed EPA groundwater protection standards, and to show how the DOE has attempted to respond and react in a positive way to the new requirements that result from the proposed standards. This report discusses the groundwater compliance strategies now being defined and implemented by the DOE, and details the changes in disposal cell designs that result from studies to evaluate ways to facilitate compliance with the proposed EPA groundwater protection standards. This report also serves to record the technical advances, planning, and progress made on the UMTRA Project since the appearance of the proposed EPA groundwater protection standards. The report serves to establish, document, and disseminate technical approaches and engineering and groundwater information to people who may be interested or involved in similar or related projects. 24 refs., 27 figs., 8 tabs.

Not Available

1989-01-01T23:59:59.000Z

32

The U.S. Department of Energy and the Federal Energy Regulatory Commission (FERC) jointly submitted to Congress a required “Implementation Proposal for The National Action Plan on Demand Response.”  

Broader source: Energy.gov [DOE]

The U.S. Department of Energy and the Federal Energy Regulatory Commission (FERC) jointly submitted to Congress a required “Implementation Proposal for The National Action Plan on Demand Response.”

33

Proposal of high efficiency solar cells with closely stacked InAs/In{sub 0.48}Ga{sub 0.52}P quantum dot superlattices: Analysis of polarized absorption characteristics via intermediate–band  

SciTech Connect (OSTI)

We present a theoretical study of the electronic structures and polarized absorption properties of quantum dot superlattices (QDSLs) using wide–gap matrix material, InAs/In{sub 0.48}Ga{sub 0.52}P QDSLs, for realizing intermediate–band solar cells (IBSCs) with two–step photon–absorption. The plane–wave expanded Burt–Foreman operator ordered 8–band k·p theory is used for this calculation, where strain effect and piezoelectric effect are taken into account. We find that the absorption spectra of the second transitions of two–step photon–absorption can be shifted to higher energy region by using In{sub 0.48}Ga{sub 0.52}P, which is lattice–matched material to GaAs substrate, as a matrix material instead of GaAs. We also find that the transverse magnetic polarized absorption spectra in InAs/In{sub 0.48}Ga{sub 0.52}P QDSL with a separate IB from the rest of the conduction minibands can be shifted to higher energy region by decreasing the QD height. As a result, the second transitions of two–step photon–absorption by the sunlight occur efficiently. These results indicate that InAs/In{sub 0.48}Ga{sub 0.52}P QDSLs are suitable material combination of IBSCs toward the realization of ultrahigh efficiency solar cells.

Yoshikawa, H., E-mail: yoshikawa-hirofumi@sharp.co.jp; Kotani, T.; Kuzumoto, Y.; Izumi, M.; Tomomura, Y.; Hamaguchi, C. [Advanced Technology Research Laboratories, Sharp Corporation Tenri, Nara 632-8567 (Japan)

2014-07-07T23:59:59.000Z

34

Corrective Action  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Corrective Action Individual Permit: Corrective Action Certifications If confirmation monitoring sample results demonstrate that one or more TALs are exceeded at a Site, the...

35

Categorical Exclusion Determination Form Proposed Action Title...  

Broader source: Energy.gov (indexed) [DOE]

(CD-PAR), a compact, low-cost power flow controller integrated with custom-wound transformers to control grid power flow, reducing the number of new transmission lines that will...

36

Categorical Exclusion Determination Form Proposed Action Title...  

Broader source: Energy.gov (indexed) [DOE]

37) Northeastern University - Multiscale Development of L 10 Materials for Rare-Earth-Free Permanent Magnets Program or Field Office: Advanced Research Projects Agency - Energy...

37

Categorical Exclusion (CX) Determination Proposed Action: Expansion...  

Broader source: Energy.gov (indexed) [DOE]

yard to accommodate an additional bay for a dedicated electrical feed to a future oil pumping station that will be part of the Keystone XL project. Number and Title of Categorical...

38

Categorical Exclusion Determination Form Proposed Action Title...  

Broader source: Energy.gov (indexed) [DOE]

0) Washington University in St. Louis - Optimal Operation and Management of Energy Storage Systems Based on Real-Time Predictive Modeling and Adaptive Battery Management Techniques...

39

Categorical Exclusion Determination Form Proposed Action Title...  

Broader source: Energy.gov (indexed) [DOE]

a virtual test bed to simulate decision-making scenarios on realistic retail and wholesale power systems and smartgrids; and (5) developing an optimized configuration of the...

40

Categorical Exclusion Determination Form Proposed Action Title...  

Broader source: Energy.gov (indexed) [DOE]

carry out all activities involving recombinant DNA and GM plants in accordance with the NIH Guidelines for Research Involving Recombinant DNA Molecules. UC Davis will receive...

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Categorical Exclusion Determination Form Proposed Action Title...  

Broader source: Energy.gov (indexed) [DOE]

work with recombinant DNA molecules and will conduct research in accordance with the NIH Guidelines for ReSearch InVOlVing ReCOmbinant DNA MoleCldes g Categorical Exclusion(s)...

42

Categorical Exclusion Determination Form Proposed Action Title...  

Broader source: Energy.gov (indexed) [DOE]

place at Smart Wire Grid, Inc. (Oakland, CA), Innoventor, Inc. (Earth City, MO), New Potato Technologies, Inc. (Wilmington, NC), National Electric Testing Research and...

43

Categorical Exclusion Determination Form Proposed Action Title...  

Broader source: Energy.gov (indexed) [DOE]

the development of manganese-aluminum (T-MnAI) bulk powder capable of replacing rare earth elements in permanent magnets that are used in wind turbine generators and electric...

44

Categorical Exclusion Determination Form Proposed Action Title...  

Broader source: Energy.gov (indexed) [DOE]

the development of iron nitride (a"-Fe16(xx)N2) bulk powder capable of replacing rare earth elements in permanent magnets that are used in wind turbine generators and electric...

45

Categorical Exclusion Determination Form Proposed Action Title...  

Broader source: Energy.gov (indexed) [DOE]

and coordinating distributed energy sources generated by "prosumers," such as wind and solar power, to improve the reliability, efficiency, flexibility, and communications within...

46

Categorical Exclusion Determination Form Proposed Action Title...  

Broader source: Energy.gov (indexed) [DOE]

control over the transmissions lines within the electricity grid during unexpected power supply interruptions caused by intermittent availability of renewable generation...

47

Categorical Exclusion Determination Form Proposed Action Title...  

Broader source: Energy.gov (indexed) [DOE]

of a low-cost, high-efficiency 100 kW power inverter to connect photovoltaic (PV) solar panels to the grid, using revolutionary bi-directiona linsulated gate bipolar...

48

Categorical Exclusion Determination Form Proposed Action Title...  

Broader source: Energy.gov (indexed) [DOE]

from materials that are earth-abundant, environmentally friendly, and cheap with a cell architecture that is inexpensive to manufacture and electrode structures expected to have...

49

Categorical Exclusion Determination Form Proposed Action Title...  

Broader source: Energy.gov (indexed) [DOE]

Funding will support development of an early stage prototype of a solid-state power inverter capable of converting low-voltage input power generated by utility-scale...

50

Categorical Exclusion Determination Form Proposed Action Title...  

Broader source: Energy.gov (indexed) [DOE]

work consists of indoor laboratory-based research and development and office-based engineering analysis, including (1) synthesis, characterization, and testing of metal...

51

Chapter 2 Proposed Action and Alternatives  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-Up fromDepartmentTieCelebrate Earth Day with SecretaryDerivedof MeetingEfficient0::2.

52

Chapter 4 Proposed Action and Alternatives  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

efficiency of existing buildings or appliances to reduce electricity use Demand response-managing when power is used at its source Distributed generation-using small...

53

Categorical Exclusion Determination Form Proposed Action Title...  

Broader source: Energy.gov (indexed) [DOE]

benefits of Topology Control in a real-world operational environment by using a simulation model that closely replicates a large power system. Project work will take place at...

54

Categorical Exclusion Determination Form Proposed Action Title...  

Broader source: Energy.gov (indexed) [DOE]

GE Global Research - Nanoclay-reinforced Ethylene-Propylene-Rubber for Low Cost HVDC Cabling Program or Field Office: Advanced Research Projects Agency - Energy LocationCs)...

55

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect (OSTI)

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

56

Proposal Process  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Proposal Process Network R&D Overview Experimental Network Testbeds 100G SDN Testbed Testbed Description Testbed Results Current Testbed Research Proposal Process Terms and...

57

Study and development of tunable, single mode AlGaAs/GaAs lasers  

SciTech Connect (OSTI)

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

1990-09-01T23:59:59.000Z

58

Proposal Process  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Testbed Results Current Testbed Research Proposal Process Terms and Conditions Dark Fiber Testbed Performance (perfSONAR) Software & Tools Development Partnerships...

59

The Essentials for GA Water Planning The Relationship  

E-Print Network [OSTI]

" FL Water Law Regulated Riparianism "Heavy" Admin Water Law ? #12;Comprehensive Water Resource Study Supply a. Water Allocation ­ Withdrawal Permit Program b. Water Storage & Delivery c. Interbasin TransferThe Essentials for GA Water Planning The Relationship Between the Proposed GA State Comprehensive

Rosemond, Amy Daum

60

Unsolicited Proposals  

Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

The order sets forth Department of Energy (DOE) requirements and responsibilities for the receipt, processing, and review of unsolicited proposals (USPs). To ensure that those submitting USPs are notified in a timely manner of the status (e.g., pending, accepted for funding, or declined) of their proposals. Cancels DOE O 542.2. Certified 12-28-06.

2002-02-27T23:59:59.000Z

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

30-Day Federal Register Notice - Proposed  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Revised 11-2009 30-Day Federal Register Notice - Proposed 6450-01-P DEPARTMENT OF ENERGY Proposed Agency Information Collection AGENCY: U.S. Department of Energy. ACTION: Notice...

62

administration proposed rule: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Register Vol. 72, No. 208 Monday, October 29, 2007 Proposed Rules 10, 1999). This action merely proposes to remove an erroneously approved State rule from the SIP...

63

Mitigation Action Plan  

SciTech Connect (OSTI)

This Mitigation Action Plan (MAP) focuses on mitigation commitments stated in the Supplemental Environmental Impact Statement (SEIS) and the Record of Decision (ROD) for the Naval Petroleum Reserve No. 1 (NPR-1). Specific commitments and mitigation implementation actions are listed in Appendix A-Mitigation Actions, and form the central focus of this MAP. They will be updated as needed to allow for organizational, regulatory, or policy changes. It is the intent of DOE to comply with all applicable federal, state, and local environmental, safety, and health laws and regulations. Eighty-six specific commitments were identified in the SEIS and associated ROD which pertain to continued operation of NPR-1 with petroleum production at the Maximum Efficient Rate (MER). The mitigation measures proposed are expected to reduce impacts as much as feasible, however, as experience is gained in actual implementation of these measures, some changes may be warranted.

Not Available

1994-02-01T23:59:59.000Z

64

p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas  

SciTech Connect (OSTI)

Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

2013-12-23T23:59:59.000Z

65

Final Proposal  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsing ZirconiaPolicyFeasibilityField Office ProgramsFinal7, 2014NovemberFinal-Proposal

66

Proposed Handout  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar HomePromising Science for Plutonium CleanupProposalTeam: D.N. Basov

67

Final Proposal  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsing ZirconiaPolicyFeasibilityField Office ProgramsFinal7,

68

Initial Proposal  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFunInfrared Land Surface Emissivity in the Vicinity

69

Ga nanoparticle-enhanced photoluminescence of GaAs  

SciTech Connect (OSTI)

We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States); Katzenstein, A. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Eckerd College, St. Petersburg, Florida 33711-4744 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

2013-09-02T23:59:59.000Z

70

Action Items  

Office of Environmental Management (EM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "of Energy Power Systems EngineeringDepartment of EnergyAbout Us » FAQsUCNIOF ENERGYU.S.-BrazilACTION

71

AlGaN/GaN-based power semiconductor switches  

E-Print Network [OSTI]

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

72

Finding of No Significant Impact Proposed Title Transfer of Parcel...  

Broader source: Energy.gov (indexed) [DOE]

Districts). The prohibition of certain uses (i.e., airport, wholesaling facilities, bulk oil and similar storage facilities) is also included as part of this proposed action....

73

Notice of proposed rulemaking, Energy Efficiency and Sustainable...  

Broader source: Energy.gov (indexed) [DOE]

DOE regarding the regulatory actions discussed herein. Notice of proposed rulemaking, Energy Efficiency and Sustainable Design Standards for New Federal Buildings, 75 Fed. Reg....

74

Ultra High p-doping Material Research for GaN Based Light Emitters  

SciTech Connect (OSTI)

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

Vladimir Dmitriev

2007-06-30T23:59:59.000Z

75

Determination of subband energies and 2DEG characteristics of Al{sub x}Ga{sub 1?x}N/GaN heterojunctions using variational method  

SciTech Connect (OSTI)

A physics-based model based on the variational method for analyzing the two dimensional electron gas (2DEG) characteristics of polar AlGaN/GaN heterojunctions is developed. The 2DEG carrier concentration, the first and second energy subbands, and the position of the Fermi energy level are calculated for various barrier thicknesses, Al mole fractions, background dopant concentrations, and gate voltages for gated AlGaN/GaN heterojunctions. The results are in good agreement with the data reported based on self-consistent method. Whereas the aforementioned report has dealt with specific values of Al mole fraction, barrier thickness, and unintentional doping level, the present work provides a basis for calculating the 2DEG characteristics for the full range of these parameters. Furthermore, according to the proposed model, the applicability of the triangular approximation of the quantum well in AlGaN/GaN heterojunctions is evaluated.

Manouchehri, Farzin; Valizadeh, Pouya; Kabir, M. Z., E-mail: kabir@encs.concordia.ca [Department of Electrical and Computer Engineering, Concordia University, Montreal, H3G 1M8 (Canada)

2014-03-15T23:59:59.000Z

76

CAHNRS PROPOSAL PROCESSING CHART Proposal budget less  

E-Print Network [OSTI]

CAHNRS PROPOSAL PROCESSING CHART Proposal budget less than $1M Proposal budget greater than $1M., prepares budget and/or proposal pkg & eREX eREX submitted to CAHNRS Grant Team for review at least 2 days-6885 Contact Office of Major Grant Development for editing and/or budget, proposal pkg, eREX preparation

Collins, Gary S.

77

DOE Initiates Enforcement Actions Against 4 Showerhead Manufacturers...  

Energy Savers [EERE]

Against 4 Showerhead Manufacturers (Notice of Proposed Civil Penalty and Requests for Test Data Issued) DOE Initiates Enforcement Actions Against 4 Showerhead Manufacturers...

78

Investigation of the GaN-on-GaAs interface for vertical power device applications  

SciTech Connect (OSTI)

GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

2014-07-07T23:59:59.000Z

79

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

80

RCRA corrective action program guide (Interim)  

SciTech Connect (OSTI)

The US Department of Energy (DOE) is responsible for compliance with an increasingly complex spectrum of environmental regulations. One of the most complex programs is the corrective action program proposed by the US Environmental Protection Agency (EPA) under the authority of the Resource Conservation and Recovery Act (RCRA) as amended by the Hazardous and Solid Waste Amendments (HSWA). The proposed regulations were published on July 27, 1990. The proposed Subpart S rule creates a comprehensive program for investigating and remediating releases of hazardous wastes and hazardous waste constituents from solid waste management units (SWMUs) at facilities permitted to treat, store, or dispose of hazardous wastes. This proposed rule directly impacts many DOE facilities which conduct such activities. This guidance document explains the entire RCRA Corrective Action process as outlined by the proposed Subpart S rule, and provides guidance intended to assist those persons responsible for implementing RCRA Corrective Action at DOE facilities.

Not Available

1993-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

4.0 IMPACTS OF THE PROPOSED ACTION AND ALTERNATIVES  

Broader source: Energy.gov (indexed) [DOE]

Air Quality Control Region (AQCR). The region is under authority of the Regional Air Pollution Control Agency (RAPCA), which monitors ambient levels of criteria...

82

ACTION DESCRIPTION MEMORANDUM PROPOSED DECONTAMINATION OF THREE BUILDINGS AT THE  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofofOxford SiteToledo SiteTonawanda North Site Unit3.1 03/13[ { -

83

Implementation Proposal for the National Action Plan on Demand Response -  

Broader source: Energy.gov (indexed) [DOE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarly Career Scientists'Montana.ProgramJulietipDepartment of Energy MediaRequirements

84

United States Forest Service - Forest Service Schedule of Proposed Actions  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov PtyInformation UC 19-6-401 et seq.NorthUniopolis,ParcelDefenseOpen| Open

85

Proposed Action Title: (0470-1517) Donald Danforth Plant Science...  

Broader source: Energy.gov (indexed) [DOE]

Title: (0470-1517) Donald Danforth Plant Science Center - Center for Enahnced Camelina Oil Program or Field Office: Advanced Research Projects Agency - Energy Location(s) (City...

86

action proposed plan: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Sustainable Transportation of climate on the world have forced us to reassess our way of living and come up with viable, sustainable Feschotte, Cedric 53 Validating Plans with...

87

Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets  

SciTech Connect (OSTI)

We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

2013-08-19T23:59:59.000Z

88

Climate change action plan  

E-Print Network [OSTI]

Delivery Climate change action plan 2009-2011 #12;2 | Climate change action plan ©istockphoto.com #12;Climate Change Action Plan Climate change action plan | 3 Contents Overview 4 Preface and Introduction 5 Climate change predictions for Scotland 6 The role of forestry 7 Protecting and managing

89

ACTIONS AND PARTIAL ACTIONS OF INDUCTIVE CONSTELLATIONS  

E-Print Network [OSTI]

ACTIONS AND PARTIAL ACTIONS OF INDUCTIVE CONSTELLATIONS VICTORIA GOULD AND CHRISTOPHER HOLLINGS structure of a semigroup can be recovered from a partial order it possesses. Date: August 13, 2009. 2000 and FEDER, and also FCT post-doctoral grant SFRH/BPD/34698/2007. 1 #12;2 VICTORIA GOULD AND CHRISTOPHER

Gould, Victoria

90

Evanescent-wave pumped room-temperature single-mode GaAs/AlGaAs core-shell nanowire lasers  

SciTech Connect (OSTI)

Evanescent-wave pumped room-temperature single-mode GaAs/AlGaAs core-shell nanowire lasers are proposed and demonstrated. The nanowires are axially excited by evanescent wave outside a microfiber with a diameter about 10??m via a ns-pulse laser. The lasing emission with a low effective threshold less than 90 nJ is achieved at 868.62?nm along with a linewidth of ?1.8?nm. Moreover, multiple lasing lines in a wavelength range from 852.56?nm to 882.48?nm are observed. The mechanism of diverse lasing wavelengths is revealed. Furthermore, the proposed GaAs/AlGaAs nanowire laser has advantages such as simple structure, easy to operate, and controllable lasing wavelength, tending to be practical in optical communications and integrated photonic circuits.

Wei, Wei; Zhang, Xia, E-mail: xzhang@bupt.edu.cn; Ren, Xiaomin [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, P.O. Box 66, Beijing 100876 (China); Liu, Yange, E-mail: ygliu@nankai.edu.cn; Wang, Zhi [Key Laboratory of Optical Information and Technology, Ministry of Education and Institute of Modern Optics, Nankai University, Tianjin 300071 (China)

2014-06-02T23:59:59.000Z

91

October 2006 Standards Actions  

Broader source: Energy.gov (indexed) [DOE]

Project No. SAFT-0109 Continued on next page Standards Actions Page 2 October 2006 2.0 NON-GOVERNMENT STANDARDS ACTIONS 2.1 American National Standards Institute American...

92

July 2006 Standards Actions  

Broader source: Energy.gov (indexed) [DOE]

were received in June 2006. Continued on next page Standards Actions Page 2 July 2005 2.0 Non-Government Standards Actions 2.1 American National Standards Institute (ANSI)...

93

Derivative actions in China   

E-Print Network [OSTI]

The enactment of derivative action was expected to be actively used by shareholders to protect their interests. In fact, it turned out that this reform effort seemed futile as the right to engage in such actions was ...

Lin, Shaowei

2014-07-02T23:59:59.000Z

94

Proposal#: 9285 Title: No Proposal found, please check proposal number  

E-Print Network [OSTI]

or completion of a degree will be promised to any sponsor as a deliverable for this project. Department Head Department Head Department Head Department Head The work proposed is technically sound and can be performed

95

Federal Register / Vol. 53, No. 250 / Thursday, December 29, 1988 / Proposed Rules progress in revising the lists. The  

E-Print Network [OSTI]

reclassification endangered to threatened.......................... .............. .1 Final delisting Proposed delisting ....................................... 1 TABLE 3.-POSSIBLE LISTING ACTIONS FOR WHICH

96

PROPOSAL PREPARATION INSTRUCTIONS  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

the escalation factors used for each fiscal year, the source of the proposed escalation rates, and the rationale as to why the proposed escalation rates are reasonable. (l)...

97

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect (OSTI)

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

98

DOCUMENTS DE TRAVAIL -WORKING PAPERS Quel cadre d'implication du secteur priv proposer  

E-Print Network [OSTI]

liquidité ­ Action collective. TITLE Private Sector Involvement and the Resolution of Liquidity Crises bankruptcy rules. KEY-WORDS Private sector involvement ­ Liquidity crisis ­ Collective action. JEL in Emerging Markets: Evaluating Alternative Proposals. ABSTRACT Private sector involvement in the resolution

Paris-Sud XI, Université de

99

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect (OSTI)

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

100

May 2008 Standards Actions  

Broader source: Energy.gov (indexed) [DOE]

Standards Actions 2 American National Standards Institute (ANSI) 2 American Society of Mechanical Engineers (ASME) 2 ASTM International 2 American Nuclear Society...

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

May 2006 Standards Actions  

Broader source: Energy.gov (indexed) [DOE]

Standards Actions 1 American National Standards Institute (ANSI) 1 American Society of Mechanical Engineers (ASME) 2 ASTM International 2 American Nuclear Society...

102

November 2006 Standards Actions  

Broader source: Energy.gov (indexed) [DOE]

Actions 2 American National Standards Institute (ANSI) 2 American Society of Mechanical Engineers (ASME) 2 ASTM International 2 American Nuclear Society (ANS) 2 National...

103

October 2007 Standards Actions  

Broader source: Energy.gov (indexed) [DOE]

Actions 1 American National Standards Institute (ANSI) 1 American Society of Mechanical Engineers (ASME) 2 ASTM International 2 American Nuclear Society (ANS) 2 National...

104

Protective Actions and Reentry  

Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

This volume defines appropriate protective actions and reentry of a site following an emergency. Canceled by DOE G 151.1-4.

1997-08-21T23:59:59.000Z

105

Climate Action Plan (Kentucky)  

Broader source: Energy.gov [DOE]

The Commonwealth of Kentucky established the Kentucky Climate Action Plan Council (KCAPC) process to identify opportunities for Kentucky to respond to the challenge of global climate change while...

106

2014 ALCC Proposals Due  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ALCC Proposals Due February 3, 2014 2014 DOE ALCC Proposals Due February 3 December 23, 2013 by Francesca Verdier (0 Comments) DOE's 2014 call for its ASCR Leadership Computing...

107

GA Solar | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpen EnergyBoard" form. To create aGA SNC Solar Jump to:GA-Solar

108

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network [OSTI]

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

Atwater, Harry

109

Proposed Transmission Towers Proposed New Substation Sites Proposed Route Segments  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for4-16HamadaBaO/Al2O3 leanProposalConveyance of6-1E:

110

Native point defects in GaSb  

SciTech Connect (OSTI)

We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p- and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude. We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals.

Kujala, J.; Segercrantz, N.; Tuomisto, F.; Slotte, J. [Department of Applied Physics, Aalto University School of Science, P.O. Box 14100, FI-00076 AALTO (Finland)

2014-10-14T23:59:59.000Z

111

Energy Action Month  

Broader source: Energy.gov [DOE]

The Federal Energy Management Program (FEMP) supports Energy Action Month by offering materials that promote energy- and water-saving practices in Federal facilities. This year's outreach materials call on Federal employees to take action and empower leadership, innovation, and excellence to realize a secure energy future.

112

EPA proposal sets MTBE back  

SciTech Connect (OSTI)

Methyl tert-butyl ether (MTBE) producers were looking for a boost from the official New Year`s start of EPA`s reformulated gasoline (RFG) program. But that prospect has been dimmed by an EPA-proposal-in reaction to concerns about RFG prices-to allow states to withdraw from the program. The states that have opted to out make up 5%-6% of the total RFG pool says Arthur Zadronzy, director/government outreach for MTBE producer Arco Chemical. {open_quotes}This is not a major hit, but it is one we have felt,{close_quotes} he says. Despite the state and EPA actions, MTBE producers are not worried about long-term consequences.

Lucas, A.

1995-01-04T23:59:59.000Z

113

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

SciTech Connect (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

114

Beta decay of Ga-62  

E-Print Network [OSTI]

from the ex- perimental ft value for a 01?01 b decay between analog states with the relation @3# 0556-2813/2003/68~1!/015501~6!/$20.00 68 015501- of 62Ga . Hardy, V. E. Mayes, R. G. Neilson, M. Sanchez-Vega, and R. E. Tribble y, College Station...

Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

2003-01-01T23:59:59.000Z

115

November 2013 ANALYSIS OF RAW ACTIONS ADDRESSING RFS  

E-Print Network [OSTI]

environmental resource areas for the proposed RAW actions associated with RFS contamination described in SectionNovember 2013 5-1 CHAPTER 5 ANALYSIS OF RAW ACTIONS ADDRESSING RFS CONTAMINATION This chapter discusses the environmental setting, impacts, and mitigation measures for the 14 fully evaluated

Lee, Jason R.

116

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

117

Environmental assessment of remedial action at the Spook uranium mill tailings site, Converse County, Wyoming  

SciTech Connect (OSTI)

This document assesses a joint remedial action proposed by the US Department of Energy Uranium Mill Tailings Remedial Action Project and the State of Wyoming Abandoned Mine Lands Program. The proposed action would consist of stabilizing uranium mill tailings and other associated contaminated materials within an inactive open pit mine on the site; backfilling the open pit with overburden materials that would act as a radon barrier and cover; and recontouring and seeding all disturbed areas to premining conditions. The impacts of no action at this site are addressed as the alternative to the proposed action. 74 refs., 12 figs., 19 tabs.

Not Available

1989-04-01T23:59:59.000Z

118

Categories for IGPPS Proposals  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

for IGPPS Proposals High quality, cutting-edge science in the areas of astrophysics, space physics, solid planetary geoscience, and climate science. Contact Director Harald...

119

SSRL- Proposal Review Panel  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Stanford Synchrotron Radiation Lab search Go an error occurred while processing this directive Proposal Review Panel Sub Panels Structural Molecular Biology & Biophysics...

120

44920 Federal Register / Vol. 78, No. 143 / Thursday, July 25, 2013 / Proposed Rules 8. Taking of Private Property  

E-Print Network [OSTI]

of Private Property This proposed rule would not cause a taking of private property or otherwise have taking implications under Executive Order 12630, Governmental Actions and Interference with Constitutionally Protected This proposed rule is not a ``significant energy action'' under Executive Order 13211, Actions Concerning

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

26. 1% solar cell efficiency for Ge mechanically stacked under GaAs  

SciTech Connect (OSTI)

We have processed a diffused Ge wafer into a Ge concentrator solar cell and mechanically stacked it under a GaAs cell fabricated by Varian. We measured this stack's efficiency to be 26.1% for terrestrial air mass 1.5 direct (AM1.5D) conditions at a 285 x concentration ratio. We showed that this efficiency is limited by optical absorption in the Varian GaAs cell caused by high 2--4 (10/sup 18/) cm/sup -3/ substrate doping. We used a 2 x 10/sup 17/ cm/sup -3/ doped GaAs filter to estimate the stack efficiency as 27.4%, which would be achieved with the same Varian GaAs cell formed on a lower doped substrate. We project efficiencies assuming the best properties reported for a GaAs device. This gives a 29.6% efficiency for an improved, planar Ge cell and 31.6% efficiency for a proposed point contact geometry for the Ge cell. The corresponding space (AM0) efficiencies at a 159 x concentration ratio range from the 23.4% value we measured on the stack up to 28.4% projected for the point contact Ge place under the best GaAs cell. We showed that Ge cells give higher efficiencies than Si when stacked under GaAs.

Partain, L.D.; Kuryla, M.S.; Weiss, R.E.; Ransom, R.A.; McLeod, P.S.; Fraas, L.M.; Cape, J.A.

1987-10-01T23:59:59.000Z

122

August 2007 Standards Actions  

Broader source: Energy.gov (indexed) [DOE]

August 2007 1.5 DOE Technical Standards Published No entries were received in August 2007 2.0 Non-Government Standards Actions 2.1 American National Standards Institute (ANSI)...

123

July 2007 Standards Actions  

Broader source: Energy.gov (indexed) [DOE]

in June 2007 1.5 DOE Technical Standards Published No entries were received in June 2007 2.0 Non-Government Standards Actions 2.1 American National Standards Institute (ANSI)...

124

April 2007 Standards Actions  

Broader source: Energy.gov (indexed) [DOE]

and Injury Surveillance Program Guidelines, 03222007; DOE-STD-1190-2007, OCSH-0005 2.0 Non-Government Standards Actions 2.1 American National Standards Institute (ANSI)...

125

Climate Action Plan (Maine)  

Broader source: Energy.gov [DOE]

In June 2003, the Maine State Legislature passed a bill charging the Department of Environmental Protection (DEP) with developing an action plan with the goal of reducing greenhouse gas (GHG)...

126

Corrective Action Program Guide  

Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

This Guide was developed to assist the Department of Energy (DOE) organizations and contractors in the development, implementation, and followup of corrective action programs utilizing the feedback and improvement core safety function within DOE's Integrated Safety Management System. This Guide outlines some of the basic principles, concepts, and lessons learned that DOE managers and contractors might consider when implementing corrective action programs based on their specific needs. Canceled by DOE G 414.1-2B. Does not cancel other directives.

2006-03-02T23:59:59.000Z

127

EA-1628: Construction and Operation of a Proposed Lignocellulosic Biorefinery, Emmetsburg, Iowa  

Broader source: Energy.gov [DOE]

This EA evaluated the potential environmental impacts of a DOE proposal to provide financial assistance (the Proposed Action) to POET Project LIBERTY, LLC (POET) for the construction and operation...

128

InGaAsN/GaAs heterojunction for multi-junction solar cells  

DOE Patents [OSTI]

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

2001-01-01T23:59:59.000Z

129

EIS-0195: Remedial Actions at Operable Unit 4, Fernald Environmental Management Project, Fernald, Ohio  

Broader source: Energy.gov [DOE]

This EIS evaluates the potential environmental impacts of a proposal to conduct remedial action at Operable Unit 4 at the Fernald Environmental Management Project.

130

Viewing biology in action | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Viewing biology in action Viewing biology in action DOE-funded pilot program will create mesoscale biological imaging platform James Evans EMSL received first-year funding of...

131

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, VOL. 21, NO. 3, JUNE 2011 2529 Development of a Multifilament PIT V3GaConductor  

E-Print Network [OSTI]

. The prospect of sustainable fusion technology has spurred projects like the International Thermonuclear Ex of a Multifilament PIT V3GaConductor for Fusion Applications J. S. Distin, L. R. Motowidlo, P. J. Lee, D. C on V3Gaassert its suitability for use in proposed fusion reactors. V3Ga may outperform Nb3Sn

132

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells  

SciTech Connect (OSTI)

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2007-02-01T23:59:59.000Z

133

DOE Withdraws Proposed Rulemaking (Test Procedure) and Proposed...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Withdraws Proposed Rulemaking (Test Procedure) and Proposed Coverage Determination (Energy Conservation Standard) for Set-Top Boxes DOE Withdraws Proposed Rulemaking (Test...

134

proposed berm design  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched5 Industrial Carbon CaptureFY08 Joint JOULECorrective Actions3 weProjectProjectBerm

135

Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs  

E-Print Network [OSTI]

AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

Gao, Feng, Ph. D. Massachusetts Institute of Technology

2014-01-01T23:59:59.000Z

136

Thermoelectric characteristic of the rough InN/GaN core-shell nanowires  

SciTech Connect (OSTI)

An analysis to model the thermoelectric (TE) effects of the rough InN/GaN core-shell nanowires (NWs) with wire diameter ranging from 25?nm to 100?nm is proposed. The elastic continuum model is employed to calculate the phonon dispersion relation curves and the related phonon group velocity. Within the framework of Boltzmann transport equations and relaxation time approximation, the electrical conductivity, Seebeck coefficient, electronic thermal conductivity, and the lattice thermal conductivity is obtained. Simulation results indicate that TE properties of the rough InN/GaN core-shell NWs are strongly affected by the surface roughness and the diameter of NWs. The optimized condition of the proposed rough InN/GaN core-shell TE NWs is studied in this paper and the highest ZT obtained in the calculation is 0.8598 at 300?K and 1.713 at 1000?K.

Wu, Chao-Wei; Wu, Yuh-Renn, E-mail: yrwu@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

2014-09-14T23:59:59.000Z

137

UCSF Sustainability Action Plan UCSF Energy Targets and Strategies August 18, 2011 Page 1  

E-Print Network [OSTI]

UCSF Sustainability Action Plan UCSF Energy Targets and Strategies August 18, 2011 Page 1 UCSF Sustainability Action Plan: Appendix V: UCSF Energy Targets and Strategies Issue Date: August 18, 2011 #12;UCSF Sustainability Action Plan UCSF Energy Targets and Strategies August 18, 2011 Page 2 Proposed Targets

Yamamoto, Keith

138

Siemens Pittsburgh, PA Novelis Corporation Atlanta, GA  

E-Print Network [OSTI]

Industrial Design ­ Shanghai, China Eaton Corporation ­ Pittsburgh, PA CMU, CTTEC ­ PittsburghSiemens ­ Pittsburgh, PA Novelis Corporation ­ Atlanta, GA Expense

McGaughey, Alan

139

Spontaneous emission in GaN/InGaN photonic crystal nanopillars  

E-Print Network [OSTI]

. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

Boyer, Edmond

140

Unsolicited Proposals | Department of Energy  

Office of Environmental Management (EM)

Unsolicited Proposals Unsolicited Proposals The Department of Energy's (DOE's) central point of receipt for all Unsolicited Proposals is the National Energy Technology Laboratory...

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

A proposed gravitodynamic theory  

E-Print Network [OSTI]

This paper proposes a gravitodynamic theory because there are similarities between gravitational theory and electrodynamics. Based on Einstein's principle of equivalence, two coordinate conditions are proposed into the four-dimensional line element and transformations. As a consequence,the equation of motion for gravitational force or inertial force has a form similar to the equation of Lorentz force on a charge in electrodynamics. The inertial forces in auniformly rotating system are calculated, which show that the Coriolis force is produced by a magnetic-type gravitational field. We have also calculated the Sagnac effect due to the rotation. These experimental facts strongly support our proposed coordinate conditions. In addition, the gravitodynamic field equations are briefly discussed. Since only four gravitational potentials (3 + 1 split) enter the metric tensor, the gravitodynamic field equations in ``3+1 split" form would be analogous to Maxwell's equations.

T. Chang

1997-03-18T23:59:59.000Z

142

Proposal Study Panels  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar HomePromising Science for Plutonium CleanupProposal Study PanelsProposal

143

CY15 Proposal Template  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed New Substation Sites Proposed Route BTRICGEGR-N Goods PO6,ActCATEGORICAL

144

OSQAR-CHASE Proposal  

E-Print Network [OSTI]

For 2015, the OSQAR collaboration will focus on a new proposal for the search of chameleon, a hypothetical scalar particle postulated as a dark energy candidate with an environment-dependant mass. The required experimental set-up has been successfully tested and validated in 2014 at the SM-18 experimental hall. This proposal will focus on the sensitivity that can be reached during the OSQAR chameleon run in 2015 as well as to possible upgrade phases of the experiment for the coming years.

(Pugnat, P; (Sulc, M

2015-01-01T23:59:59.000Z

145

POSITION MANAGEMENT ACTION FORM  

E-Print Network [OSTI]

POSITION MANAGEMENT ACTION FORM Workforce Planning | 408-924-2250 classcomp@sjsu.edu SJSU Human FOR POSITION MANAGEMENT FORM Workforce Planning | 408-924-2250| classcomp@sjsu.edu SJSU Human Resources Revised contact your Workforce Planning Analyst. List the name of the position this position reports to

Eirinaki, Magdalini

146

Action Plan Materials Science  

E-Print Network [OSTI]

sense, including all strata) has available to it a wide range of con- venient products which improve, improving companies' pros- pects and generating wealth without harming the environment. And allAction Plan 2010-2013 Materials Science Area EXECUTIVE SUMMARY #12;N.B.: If you require any further

Fitze, Patrick

147

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

SciTech Connect (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

148

Project Proposal Project Logistics  

E-Print Network [OSTI]

Project Proposal · Project Logistics: ­ 2-3 person teams ­ Significant implementation, worth 55 and anticipated cost of copying to/from host memory. IV. Intellectual Challenges - Generally, what makes this computation worthy of a project? - Point to any difficulties you anticipate at present in achieving high

Hall, Mary W.

149

Proposed Drill Sites  

SciTech Connect (OSTI)

Proposed drill sites for intermediate depth temperature gradient holes and/or deep resource confirmation wells. Temperature gradient contours based on shallow TG program and faults interpreted from seismic reflection survey are shown, as are two faults interpreted by seismic contractor Optim but not by Oski Energy, LLC.

Lane, Michael

2013-06-28T23:59:59.000Z

150

Proposed Drill Sites  

DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

Proposed drill sites for intermediate depth temperature gradient holes and/or deep resource confirmation wells. Temperature gradient contours based on shallow TG program and faults interpreted from seismic reflection survey are shown, as are two faults interpreted by seismic contractor Optim but not by Oski Energy, LLC.

Lane, Michael

151

PROPOSED RESIDENTIAL ALTERNATIVE CALCULATION  

E-Print Network [OSTI]

PROPOSED RESIDENTIAL ALTERNATIVE CALCULATION MANUAL (ACM) APPROVAL METHOD for the 2013 2012 CEC400201200715DAY #12;201308 Residential ACM Approval Manual 2-2 1. Overview Minimum Modeling Capabilities 1. Overview This Manual explains the requirements for approval of residential Alternative

152

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA Energy on My Mind FUPWG Atlanta, GA May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta,...

153

TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer  

SciTech Connect (OSTI)

It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

2008-01-01T23:59:59.000Z

154

Defect studies in ion irradiated AlGaN. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed Newcatalyst phasesData Files Data Files 1B&W Y-12studies in ion irradiated AlGaN.

155

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se2 Thin Films  

E-Print Network [OSTI]

state with an ionization energy of ~16 meV is proposed to be a transition into band tail states rather resource concerns have spurred interest in renewable energy technologies, particularly in the area identified between defect spectra of CuInSe2 and CuGaSe2 ­ the transition energies are different

Rockett, Angus

156

Corrective Action Plan for Corrective Action Unit 417: Central Nevada Test Area Surface, Nevada  

SciTech Connect (OSTI)

This Corrective Action Plan provides methods for implementing the approved corrective action alternative as provided in the Corrective Action Decision Document for the Central Nevada Test Area (CNTA), Corrective Action Unit (CAU) 417 (DOE/NV, 1999). The CNTA is located in the Hot Creek Valley in Nye County, Nevada, approximately 137 kilometers (85 miles) northeast of Tonopah, Nevada. The CNTA consists of three separate land withdrawal areas commonly referred to as UC-1, UC-3, and UC-4, all of which are accessible to the public. CAU 417 consists of 34 Corrective Action Sites (CASs). Results of the investigation activities completed in 1998 are presented in Appendix D of the Corrective Action Decision Document (DOE/NV, 1999). According to the results, the only Constituent of Concern at the CNTA is total petroleum hydrocarbons (TPH). Of the 34 CASs, corrective action was proposed for 16 sites in 13 CASs. In fiscal year 1999, a Phase I Work Plan was prepared for the construction of a cover on the UC-4 Mud Pit C to gather information on cover constructibility and to perform site management activities. With Nevada Division of Environmental Protection concurrence, the Phase I field activities began in August 1999. A multi-layered cover using a Geosynthetic Clay Liner as an infiltration barrier was constructed over the UC-4 Mud Pit. Some TPH impacted material was relocated, concrete monuments were installed at nine sites, signs warning of site conditions were posted at seven sites, and subsidence markers were installed on the UC-4 Mud Pit C cover. Results from the field activities indicated that the UC-4 Mud Pit C cover design was constructable and could be used at the UC-1 Central Mud Pit (CMP). However, because of the size of the UC-1 CMP this design would be extremely costly. An alternative cover design, a vegetated cover, is proposed for the UC-1 CMP.

K. Campbell

2000-04-01T23:59:59.000Z

157

Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators  

E-Print Network [OSTI]

focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

Demir, Hilmi Volkan

158

Oklahoma State University proposed Advanced Technology Research Center. Environmental Assessment  

SciTech Connect (OSTI)

The Department of Energy (DOE) has prepared an Environmental Assessment (EA) evaluating the construction and equipping of the proposed Advanced Technology Research Center (ATRC) at Oklahoma State University (OSU) in Stillwater, Oklahoma. Based on the analysis in the EA, the DOE has determined that the proposed action does not constitute a major federal action significantly affecting the quality of the human environment within the meaning of the National Environmental Policy Act (NEPA) of 1969. Therefore, the preparation of an Environmental Impact Statement is not required.

NONE

1995-06-01T23:59:59.000Z

159

Corrective Action Investigation Plan for Corrective Action Unit...  

Office of Scientific and Technical Information (OSTI)

Plan for Corrective Action Unit 541: Small Boy Nevada National Security Site and Nevada Test and Training Range, Nevada Re-direct Destination: Corrective Action Unit (CAU) 541 is...

160

Ga-doped ZnO grown by pulsed laser deposition in H2: the roles of Ga and H.  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFun with Big Sky Learning Fun with Big SkyDIII-DRMR LSU/CAMD| EMSL Ga-doped

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Proposed SOLCOST maintenance activities  

SciTech Connect (OSTI)

This document provides a short description of work that has been accomplished to date and work in progress. A discussion of the program status as it is currently configured follows and finally proposed work by Solar Environmental Engineering Company (SEEC) in its most recently signed contract with the Department of Energy (DOE) is given. Early statements are designed to give the reader a good background so that the suggested SOLCOST maintenance activities will be more easily understood.

none,

1980-01-01T23:59:59.000Z

162

SAVEnergy Action Plans  

SciTech Connect (OSTI)

The Department of Energy`s Federal Energy Management Program (FEMP) is charged with carrying out key sections of EPACT and Executive Order 12903, to make the Federal government operate more efficiently. A congressionally mandated energy and water conservation audit program is one component of this growing DOE program. This paper traces the SAVEnergy Action Plan program throughout its development from (1) identifying projects and Agency champions, (2) establishing a protocol and fitting auditors into the program, (3) developing a data base to track the audits and measure their success, and (4) evaluating the process, learning from mistakes, and charting and transferring successes. A major tenet of the SAVEnergy program is to proactively prescreen all audit activities to ensure that -- where audits are done and Action Plans completed -- projects will be done.

Mayo, K.; Westby, R. [National Renewable Energy Lab., Golden, CO (United States)] [National Renewable Energy Lab., Golden, CO (United States); deMonsabert, S. [George Mason Univ., Fairfax, VA (United States)] [George Mason Univ., Fairfax, VA (United States); Ginsberg, M. [USDOE, Washington, DC (United States)] [USDOE, Washington, DC (United States)

1994-04-01T23:59:59.000Z

163

proposed surface and subsurface marker designs  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched5 Industrial Carbon CaptureFY08 Joint JOULECorrective Actions3Images of proposed

164

Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

165

CLEMSON UNIVERSITY Sustainability Action Plan  

E-Print Network [OSTI]

.......................................................................... 8 Action Steps for Sustainability Education, Culture, and Leadership CLEMSON UNIVERSITY Sustainability Action Plan Submitted by the President's Commission on Sustainability, August 1, 2011 Version 1.0.9 #12; 1 Table of Contents President

Duchowski, Andrew T.

166

Climate Action Plan (Manitoba, Canada)  

Broader source: Energy.gov [DOE]

Manitoba's Climate Action Plan centers around energy efficiency, although it includes mandates and initiatives for renewable sources of energy.

167

Environmental assessment of remedial action at the Maybell Uranium Mill Tailings Site near Maybell, Colorado. Revision 1  

SciTech Connect (OSTI)

The purpose of this environmental assessment (EA) is to evaluate the environmental impacts resulting from remedial action at the Maybell uranium mill tailings site near Maybell, Colorado. A biological assessment (Attachment 1) and a floodplain/wetlands attachments describe the proposed action, affected environment, and environmental impacts associated with the proposed remedial action, including impacts to threatened and endangered species listed or proposed for listing by the US Fish and Wildlife Service (FWS).

Not Available

1994-04-01T23:59:59.000Z

168

Environmental assessment of remedial action at the Maybell uranium mill tailings site near Maybell, Colorado: Revision 2  

SciTech Connect (OSTI)

The purpose of this environmental assessment (EA) is to evaluate the environmental impacts resulting from remedial action at the Maybell uranium mill tailings site near Maybell, Colorado. A biological assessment and a floodplain/wetlands assessment are included as part of this EA. This report and attachments describe the proposed action, affected environment, and environmental impacts associated with the proposed remedial action, including impacts to threatened and endangered species listed or proposed for listing by the US Fish and Wildlife Service (FWS).

Not Available

1994-11-01T23:59:59.000Z

169

Categories for IGPPS Proposals  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series to someone6Energy,MUSEUM DISPLAYCareers TheEmailCatalogCategoricalProposal

170

Proposal Study Panels  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar HomePromising Science for Plutonium CleanupProposal Study Panels Print

171

Proposal Study Panels  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar HomePromising Science for Plutonium CleanupProposal Study Panels

172

Proposed Physics Experiments  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar HomePromising Science for Plutonium CleanupProposalTeam: D.N. Basov

173

General User Proposals (GUPs)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFun with Big Sky Learning Fun withGenepoolCrystals. | EMSL Schema

174

General User Proposals (GUPs)  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFun with Big Sky Learning Fun withGenepoolCrystals. | EMSL SchemaGeneral User

175

Integrated Proposal Tracking System  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFunInfrared Land SurfaceVirus-Infected Macaques through

176

LANSCE | User Resources | Proposals  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert Southwest Region serviceMission Statement TitanProposals | FY2016 pRad: Call for

177

LANSCE | User Resources | Proposals  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert Southwest Region serviceMission Statement TitanProposals | FY2016 pRad: Call

178

ESIF Project Proposal Form  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed NewcatalystNeutronEnvironment >Dange1·DangerEPADetectionESH&SSTIMSON

179

Proposal Study Panels  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for4-16HamadaBaO/Al2O3 lean NOxRecyclingImmatureProposal

180

Proposal Study Panels  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for4-16HamadaBaO/Al2O3 leanProposal Study Panels Print Two

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Proposal Study Panels  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for4-16HamadaBaO/Al2O3 leanProposal Study Panels Print

182

Proposal Study Panels  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for4-16HamadaBaO/Al2O3 leanProposal Study Panels

183

Proposed Conveyance of Land  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for4-16HamadaBaO/Al2O3 leanProposalConveyance of Land at the

184

Sodium dichromate expedited response action assessment  

SciTech Connect (OSTI)

The US Environmental Protection Agency (EPA) and Washington Department of Ecology (Ecology) recommended that the US Department of Energy (DOE) perform an expedited response action (ERA) for the Sodium Dichromate Barrel Disposal Landfill. The ERA lead regulatory agency is Ecology and EPA is the support agency. The ERA was categorized as non-time-critical, which required preparation of an engineering evaluation and cost analysis (EE/CA). The EE/CA was included in the ERA proposal. The EE/CA is a rapid, focused evaluation of available technologies using specific screening factors to assess feasibility, appropriateness, and cost. The ERA goal is to reduce the potential for any contaminant migration from the landfill to the soil column, groundwater, and Columbia River. Since the Sodium Dichromate Barrel Disposal Landfill is the only waste site within the operable unit, the removal action may be the final remediation of the 100-IU-4 Operable Unit. This ERA process started in March 1992. The ERA proposal went through a parallel review process with Westinghouse Hanford Company (WHC), DOE Richland Operations (RL), EPA, Ecology, and a 30-day public comment period. Ecology and EPA issued an Action Agreement Memorandum in March 1993 (Appendix A). The memorandum directed excavation of all anomalies and disposal of the collected materials at the Hanford Site Central Landfill. Primary field activities were completed by the end of April 1993. Final waste disposal of a minor quantity of hazardous waste was completed in July 1993.

Not Available

1993-09-01T23:59:59.000Z

185

Loyola / Aspira Summer Science Camp Proposal (NSF) PROPOSAL CONTENTS  

E-Print Network [OSTI]

Loyola / Aspira Summer Science Camp Proposal (NSF) PROPOSAL CONTENTS INTRODUCTION .....................................................................................................................................................1 This Project will replicate a DOE Pre-Freshman Enrichment Project ...........................................................................................................1 Six Project Objectives

Reed, Dale F.

186

Ohmic contacts to n-GaSb  

E-Print Network [OSTI]

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

187

Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures  

SciTech Connect (OSTI)

In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

2014-01-13T23:59:59.000Z

188

Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire  

SciTech Connect (OSTI)

We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2014-09-08T23:59:59.000Z

189

VIOLENT FRAMES IN ACTION  

SciTech Connect (OSTI)

We present a computational approach to radical rhetoric that leverages the co-expression of rhetoric and action features in discourse to identify violent intent. The approach combines text mining and machine learning techniques with insights from Frame Analysis and theories that explain the emergence of violence in terms of moral disengagement, the violation of sacred values and social isolation in order to build computational models that identify messages from terrorist sources and estimate their proximity to an attack. We discuss a specific application of this approach to a body of documents from and about radical and terrorist groups in the Middle East and present the results achieved.

Sanfilippo, Antonio P.; McGrath, Liam R.; Whitney, Paul D.

2011-11-17T23:59:59.000Z

190

Mitigation Action Plan  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment SurfacesResource Program PreliminaryA3,0Statements |Mission73 4.17Mitigation Action

191

Interim Action Determination  

Office of Environmental Management (EM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "of EnergyEnergyENERGY TAX POLICIES7.pdfFuel2007 | Department7 U.S. Department ofAboutWAPAInterim Action

192

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect (OSTI)

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

193

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells  

SciTech Connect (OSTI)

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2014-04-28T23:59:59.000Z

194

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT  

SciTech Connect (OSTI)

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

2014-04-24T23:59:59.000Z

195

REMEDIAL ACTION PLAN  

E-Print Network [OSTI]

designated site consists of the 111-acre tailings pile, the mill yard, and piles of demolition rubble awaiting burial. The site contains 2.659 million cubic yards of tailings including 277,000 cubic yards of contaminated material in the mill yard, ore storage area, and Ann Lee Mine area; 151,000 cubic yards in the protore storage and leach pad areas; and 664,000 cubic yards of windblown contaminated soil, including excess soil that would result from excavation. Remedial action The remedial action will start with the excavation of windblown contaminated material and placement around the west, south, and east sides of the pile to buttress the slopes for increased stability. Most of the demolition rubble will be placed in the southern part of the pile and be covered with tailings. The northern part of the tailings pile (one million cubic yards) will then be excavated and placed on the south part of the pile to reduce the size of the disposal cell footprint. Demolition rubble that

Inactive Uranium; Mill Tailings Site; Uranium Mill Tremedial

1990-01-01T23:59:59.000Z

196

Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface  

E-Print Network [OSTI]

in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

Katsumoto, Shingo

197

InAsGaPInGaP high-temperature power Schottky rectifier and J. M. Woodall  

E-Print Network [OSTI]

°C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion is thought to be due to strong covalent bonding at the InAs/GaP interface. The InAs/GaP heterointerface effectively blocks impurity diffusion. Since InGaP is superior to GaP for high-power applica- tions, as shown

Woodall, Jerry M.

198

Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting  

E-Print Network [OSTI]

of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

Wetzel, Christian M.

199

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

200

Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)  

SciTech Connect (OSTI)

We describe InAs quantum dot creation in InAs/GaAsSb barrier structures grown on GaAs (001) wafers by molecular beam epitaxy. The structures consist of 20-nm-thick GaAsSb barrier layers with Sb content of 8%, 13%, 15%, 16%, and 37% enclosing 2 monolayers of self-assembled InAs quantum dots. Transmission electron microscopy and X-ray diffraction results indicate the onset of relaxation of the GaAsSb layers at around 15% Sb content with intersected 60° dislocation semi-loops, and edge segments created within the volume of the epitaxial structures. 38% relaxation of initial elastic stress is seen for 37% Sb content, accompanied by the creation of a dense net of dislocations. The degradation of In surface migration by these dislocation trenches is so severe that quantum dot formation is completely suppressed. The results highlight the importance of understanding defect formation during stress relaxation for quantum dot structures particularly those with larger numbers of InAs quantum-dot layers, such as those proposed for realizing an intermediate band material.

Bremner, S. P. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052 (Australia)] [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052 (Australia); Ban, K.-Y.; Faleev, N. N.; Honsberg, C. B. [School of Electrical, Computer and Energy Engineering, Ira A. Fulton Schools of Engineering, Solar Power Lab, Arizona State University, Tempe, Arizona 85287 (United States)] [School of Electrical, Computer and Energy Engineering, Ira A. Fulton Schools of Engineering, Solar Power Lab, Arizona State University, Tempe, Arizona 85287 (United States); Smith, D. J. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)] [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

2013-09-14T23:59:59.000Z

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Corrective Action Investigation Plan for Corrective Action Unit...  

Office of Scientific and Technical Information (OSTI)

Plan for Corrective Action Unit 541: Small Boy Nevada National Security Site and Nevada Test and Training Range, Nevada Re-direct Destination: Temp Data Fields Matthews, Patrick...

202

Philadelphia, Pennsylvania: Solar in Action (Brochure), Solar...  

Broader source: Energy.gov (indexed) [DOE]

Philadelphia, Pennsylvania: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Philadelphia, Pennsylvania: Solar in Action (Brochure),...

203

Guam Energy Action Plan  

SciTech Connect (OSTI)

Describes the four near-term strategies selected by the Guam Energy Task Force during action planning workshops conducted in March 2013, and outlines the steps being taken to implement those strategies. Each strategy addresses one of the energy sectors identified in the earlier Guam strategic energy plan as being an essential component of diversifying Guam's fuel sources and reducing fossil energy consumption 20% by 2020. The four energy strategies selected are: (1) expanding public outreach on energy efficiency and conservation, (2) establishing a demand-side management revolving loan program, (3) exploring waste-to-energy options, and (4) influencing the transportation sector via anti-idling legislation, vehicle registration fees, and electric vehicles.

Conrad, M. D.; Ness, J. E.

2013-07-01T23:59:59.000Z

204

Proposed Remedial Action Plan: Proposed Plan for Remedial Action at the Quarry Residuals Operable Unit of the Weldon Spring Site. DOE/OR/21548-724  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCT 28 1%AU62 & 199344 2004 GJt : -.

205

RCRA/UST, superfund, and EPCRA hotline training module. Introduction to: Corrective action, updated as of July 1995  

SciTech Connect (OSTI)

The module reviews the regulatory and statutory requirements and authorities governing the Resource Conservation and Recovery Act correction action process. It lists the statutory authorities for correction action and explains their application and identifies the existing regulatory authorities for corrective action and explains their application. It describes the four primary triggers for corrective action and describes the six main stages of the corrective action process. It defines terms that are specific to the corrective action process (e.g., solid waste management unit, action levels). It identifies the proposed corrective action regulations and the schedule for final rulemaking. It assesses whether or not financial assurance is required for corrective action. It describes how the corrective action program can apply to generators and other facilities that do not require a permit.

NONE

1995-11-01T23:59:59.000Z

206

Electrical characteristics and thermal stability of HfO{sub 2} metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces  

SciTech Connect (OSTI)

HfO{sub 2}/GaSb interfaces fabricated by high-vacuum HfO{sub 2} deposition on clean reconstructed GaSb surfaces were examined to explore a thermally stable GaSb metal-oxide-semiconductor structure with low interface-state density (D{sub it}). Interface Sb-O bonds were electrically and thermally unstable, and post-metallization annealing at temperatures higher than 200?°C was required to stabilize the HfO{sub 2}/GaSb interfaces. However, the annealing led to large D{sub it} in the upper-half band gap. We propose that the decomposition products that are associated with elemental Sb atoms act as interface states, since a clear correlation between the D{sub it} and the Sb coverage on the initial GaSb surfaces was observed.

Miyata, Noriyuki, E-mail: nori.miyata@aist.go.jp; Mori, Takahiro; Yasuda, Tetsuji [National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Ohtake, Akihiro [National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan); Ichikawa, Masakazu [The University of Tokyo, Tokyo 113-8656 (Japan)

2014-06-09T23:59:59.000Z

207

Rapid silicon outdiffusion from SiC substrates during molecular-beam epitaxial growth of AlGaN/GaN/AlN transistor structures  

SciTech Connect (OSTI)

AlGaN/GaN/AlN transistor structures were grown onto SiC substrates by molecular-beam epitaxy. Under aluminum-rich growth conditions for the AlN nucleation layer, undesirable n-type conduction is observed near the GaN/AlN interface for even thick (>1000 A) AlN layers. Silicon is identified as the unwanted dopant from secondary-ion mass spectroscopy measurements. Atomic force microscopy surface maps reveal free aluminum metal on AlN surfaces grown under modest aluminum-rich conditions. It is proposed that rapid silicon migration is caused by molten aluminum reacting with the SiC substrate resulting in dissolved silicon that rapidly migrates through the growing AlN layer. This behavior is significantly reduced using a growth flux ratio of aluminum to reactive nitrogen close to unity. The resulting buffer leakage current of the GaN high electron mobility transistor structure is reduced by more than four orders of magnitude.

Hoke, W.E.; Torabi, A.; Mosca, J.J.; Hallock, R.B.; Kennedy, T.D. [Raytheon RF Components, 362 Lowell Street, Andover, Massachusetts 01810 (United States)

2005-10-15T23:59:59.000Z

208

Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires  

SciTech Connect (OSTI)

The near-surface reduction of the Sb mole fraction during the growth of GaAsSb nanowires (NWs) and GaAs NWs with GaAsSb inserts has been studied using quantitative high-angle annular dark field scanning transmission electron microscopy (STEM). A model for diffusion of Sb in the hexagonal NWs was developed and employed in combination with the quantitative STEM analysis. GaAsSb NWs grown by Ga-assisted molecular beam epitaxy (MBE) and GaAs/GaAsSb NWs grown by Ga- and Au-assisted MBE were investigated. At the high temperatures employed in the NW growth, As-Sb exchange at and outward diffusion of Sb towards the surface take place, resulting in reduction of the Sb concentration at and near the surface in the GaAsSb NWs and the GaAsSb inserts. In GaAsSb NWs, an increasing near-surface depletion of Sb was observed towards the bottom of the NW due to longer exposure to the As beam flux. In GaAsSb inserts, an increasing change in the Sb concentration profile was observed with increasing post-insert axial GaAs growth time, resulting from a combined effect of radial GaAs overgrowth and diffusion of Sb. The effect of growth temperature on the diffusion of Sb in the GaAsSb inserts was identified. The consequences of these findings for growth optimization and the optoelectronic properties of GaAsSb are discussed.

Kauko, H.; Helvoort, A. T. J. van, E-mail: a.helvoort@ntnu.no [Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim (Norway); Fimland, B. O.; Munshi, A. M. [Department of Electronics and Telecommunications, NTNU, Trondheim (Norway); Grieb, T.; Müller, K.; Rosenauer, A. [Institut für Festkörperphysik, Universität Bremen, Bremen (Germany)

2014-10-14T23:59:59.000Z

209

Webinar for Tribes, States, Local Governments, and Territories on the Clean Power Plan Supplemental Proposal  

Office of Energy Efficiency and Renewable Energy (EERE)

On Tuesday, October 28, 2014, EPA issued an action related to the proposed Clean Power Plan to cut carbon pollution from power plants. EPA is following through on its commitment made in June to...

210

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template  

SciTech Connect (OSTI)

We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110 nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

Wang, Y.D.; Zang, K.Y.; Chua, S.J.; Tripathy, S.; Chen, P.; Fonstad, C.G. [Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2005-12-19T23:59:59.000Z

211

REGULAR PAPER Improvement of Surge Protection by Using an AlGaN/GaN-Based  

E-Print Network [OSTI]

the metal oxide varistor (MOV) and resistor (R) in a state-of-the-art surge protection circuit), metal oxide varistor (MOV), and transient voltage suppressor (TVS) diodes are the state-of-the- artREGULAR PAPER Improvement of Surge Protection by Using an AlGaN/GaN-Based Metal­Semiconductor­Metal

Chow, Lee

212

Environmental assessment of remedial action at the Maybell uranium mill tailings site near Maybell, Colorado  

SciTech Connect (OSTI)

The purpose of this environmental assessment (EA) is to evaluate the environmental impacts resulting from remedial action at the Maybell uranium mill tailings site near Maybell, Colorado. A biological assessment (Attachment 1) and a floodplain/wetlands assessment (Assessment 2) are included as part of this EA. The following sections and attachments describe the proposed action, affected environment, and environmental impacts associated with the proposed remedial action, including impacts to threatened and endangered species listed or proposed for listing by the US Fish and Wildlife Service.

Not Available

1993-09-01T23:59:59.000Z

213

RCRA, superfund and EPCRA hotline training module. Introduction to: RCRA corrective action updated July 1996  

SciTech Connect (OSTI)

The module discusses the regulatory and statutory requirements and authorities governing the Resource Conservation and Recovery Act (RCRA) corrective action process. There are minimal regulatory requirements at present, but the Agency has issued a proposed rule (55 FR 30798; July 27, 1990) that would establish a comprehensive regulatory framework for implementing the corrective action program. This proposed rule and other guidance developed pursuant to statutory authorities are used to structure corrective action requirements in facility permits and orders. This module describes the current statutory and regulatory structure and discusses the future of the proposed rule.

NONE

1996-07-01T23:59:59.000Z

214

Remedial action plan and site design for stabilization of the inactive uranium mill tailings sites at Slick Rock, Colorado: Remedial Action Selection Report. Preliminary final  

SciTech Connect (OSTI)

This proposed remedial action plan incorporates the results of detailed investigation of geologic, geomorphic, and seismic conditions at the proposed disposal site. The proposed remedial action will consist of relocating the uranium mill tailings, contaminated vicinity property materials, demolition debris, and windblown/waterborne materials to a permanent repository at the proposed Burro Canyon disposal cell. The proposed disposal site will be geomorphically stable. Seismic design parameters were developed for the geotechnical analyses of the proposed cell. Cell stability was analyzed to ensure long-term performance of the disposal cell in meeting design standards, including slope stability, settlement, and liquefaction potential. The proposed cell cover and erosion protection features were also analyzed and designed to protect the RRM (residual radioactive materials) against surface water and wind erosion. The location of the proposed cell precludes the need for permanent drainage or interceptor ditches. Rock to be used on the cell top-, side-, and toeslopes was sized to withstand probable maximum precipitation events.

Not Available

1994-03-01T23:59:59.000Z

215

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

216

Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets  

SciTech Connect (OSTI)

We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(×2.1±1) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

2014-09-21T23:59:59.000Z

217

Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)  

SciTech Connect (OSTI)

GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

2013-12-02T23:59:59.000Z

218

Quantum confinement in GaP nanoclusters  

SciTech Connect (OSTI)

We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.

Laurich, B.K.; Smith, D.C.; Healy, M.D.

1994-06-01T23:59:59.000Z

219

BIOMASS ACTION PLAN FOR SCOTLAND  

E-Print Network [OSTI]

BIOMASS ACTION PLAN FOR SCOTLAND #12; #12;© Crown copyright 2007 ISBN: 978 0 7559 6506 9 Scottish% recyclable. #12;A BIOMASS ACTION PLAN FOR SCOTLAND #12;#12;1 CONTENTS FOREWORD 3 1. EXECUTIVE SUMMARY 5 2. INTRODUCTION 9 3. WIDER CONTEXT 13 4. SCOTLAND'S ROLE IN THE UK BIOMASS STRATEGY 17 5. BIOMASS HEATING 23 6

220

STUDENT DISCIPLINARY ACTION FORM INSTRUCTIONS  

E-Print Network [OSTI]

STUDENT DISCIPLINARY ACTION FORM INSTRUCTIONS Labor Program Office Berea College While one across campus. The "Student Disciplinary Action Form" was designed to provide labor supervisors directly with the student and discuss the matter in private. Calmly discuss the offense and the corrective

Baltisberger, Jay H.

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

FUNDING IN ACTION  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsing ZirconiaPolicy andExsolutionFES Committees of9,ofAPPROPRIATION FYThe ORNL

222

FUNDING IN ACTION  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsing ZirconiaPolicy andExsolutionFES Committees of9,ofAPPROPRIATION FYThe

223

LBNL Frequently Needed Proposal Information  

E-Print Network [OSTI]

06/05/2014 LBNL Frequently Needed Proposal Information Frequently Needed Proposal information is LBNL Institutional Information that may be required to complete proposals and grant applications Berkeley National Laboratory (LBNL) is operated by The Regents of the University of California (UC

224

PROPOSED ENERGY PROVISIONS OF THE  

E-Print Network [OSTI]

PROPOSED ENERGY PROVISIONS OF THE CALIFORNIA GREEN BUILDING STANDARDS CODE (UNMARKED) PART;Proposed Energy Provisions of the California Green Building Standards Code (Unmarked) Page 2 CHAPTER 4 N LY #12;Proposed Energy Provisions of the California Green Building Standards Code (Unmarked) Page

225

Microstructure characterization of Cu,Ge/n-type GaAs ohmic contacts M. 0. Aboelfotoh, S. Oktyabrsky, and J. Narayan  

E-Print Network [OSTI]

contacts of Ge/Pd/n-type GaAs have been proposed.4 This contact scheme involves the deposition of a metal at 325 "C for 30 min, the entire layer of Pd is consumed in the formation of a palladium germanide layer to the Ge/Pd contacts,' and that n-channel GaAs metal- semiconductor field-effect transistors using the q

Woodall, Jerry M.

226

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

227

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

228

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect (OSTI)

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

229

Response to WAG Consultation on the Alternative Transport Fuels in Wales Action Plan  

E-Print Network [OSTI]

Response to WAG Consultation on the Alternative Transport Fuels in Wales Action Plan Centre of alternative transport fuels in its own policy documents, notably the Sustainable Development Action Plan 2004, the EU Commission has proposed a binding target of 10% for biofuels for vehicle fuel by 2020. While

Martin, Ralph R.

230

Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots  

SciTech Connect (OSTI)

The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France)] [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)] [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Física, Universidade Federal do Ceará, P.O. Box 6030, Fortaleza–CE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain)] [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Goñi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)] [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)

2014-01-06T23:59:59.000Z

231

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect (OSTI)

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

232

Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes  

SciTech Connect (OSTI)

We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States); Yarrison-Rice, Jan [Department of Physics, Miami University, Oxford, OH 45056 (United States); Gao, Qiang; Tan, Hoe; Jagadish, Chennupati [Department of Electronic Materials and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Etheridge, Joanne [Monash Centre for Electron Microscopy, Monash University, Victoria, 3800 (Australia); Wong, Bryan M. [Materials Chemistry Department, Sandia National Laboratories, Livermore, CA 94551 (United States)

2013-12-04T23:59:59.000Z

233

Effects of bias and temperature on the intersubband absorption in very long wavelength GaAs/AlGaAs quantum well infrared photodetectors  

SciTech Connect (OSTI)

The temperature- and bias-dependent photocurrent spectra of very long wavelength GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) are studied using spectroscopic measurements and corresponding theoretical calculations. It is found that the peak response wavelength will shift as the bias and temperature change. Aided by band structure calculations, we propose a model of the double excited states and explain the experimental observations very well. In addition, the working mechanisms of the quasi-bound state confined in the quantum well, including the processes of tunneling and thermionic emission, are also investigated in detail. We confirm that the first excited state, which belongs to the quasi-bound state, can be converted into a quasi-continuum state induced by bias and temperature. These obtained results provide a full understanding of the bound-to-quasi-bound state and the bound-to-quasi-continuum state transition, and thus allow for a better optimization of QWIPs performance.

Liu, X. H.; Zhou, X. H., E-mail: xhzhou@mail.sitp.ac.cn; Li, N.; Liao, K. S.; Huang, L.; Li, Q.; Li, Z. F.; Chen, P. P.; Lu, W. [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083 (China); Wang, L.; Sun, Q. L. [Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)

2014-03-28T23:59:59.000Z

234

Mind Out of Action: The Intentionality of Automatic Actions   

E-Print Network [OSTI]

We think less than we think. My thesis moves from this suspicion to show that standard accounts of intentional action can't explain the whole of agency. Causalist accounts such as Davidson's and Bratman's, according to ...

Di Nucci, Ezio

2008-01-01T23:59:59.000Z

235

actions significant actions: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Commitment in January 2009. In doing so, he joined more than 600 presidents to achieve climate neutrality as soon as possible. 2. Initiate two or more tangible actions to reduce...

236

On strongly GA-convex functions and stochastic processes  

SciTech Connect (OSTI)

In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

Bekar, Nurgül Okur [Department of Statistics, Giresun University, Giresun (Turkey); Akdemir, Hande Günay; ??can, ?mdat [Department of Mathematics, Giresun University, Giresun (Turkey)

2014-08-20T23:59:59.000Z

237

Energy absorption in Ni-Mn-Ga/ polymer composites  

E-Print Network [OSTI]

In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

Feuchtwanger, Jorge

2006-01-01T23:59:59.000Z

238

SCOTTISH RED SQUIRREL ACTION PLAN  

E-Print Network [OSTI]

SCOTTISH RED SQUIRREL ACTION PLAN 2006­2011 #12;#12;S C O T T I S H R E D S Q U I R R E L A C T I O.1 Background 1 1.2 Action Plan Working Group 1 1.3 Issues affecting the conservation of the red squirrel 1 1.2 Timescale and partnership working 3 2.3 Rationale 3 2.4 Key actions 4 2.4.1 Establish and monitor the red

239

Accurate characterization and improvement of GaAs microstrip attenuation  

E-Print Network [OSTI]

Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

Carroll, James Mason

2012-06-07T23:59:59.000Z

240

Theoretical and Experimental Examination of the Intermediate-Band Concept for Strain-Balanced (In,Ga)As/Ga(As,P) Quantum Dot Solar Cells  

SciTech Connect (OSTI)

The intermediate-band solar cell (IBSC) concept has been recently proposed to enhance the current gain from the solar spectrum while maintaining a large open-circuit voltage. Its main idea is to introduce a partially occupied intermediate band (IB) between the valence band (VB) and conduction band (CB) of the semiconductor absorber, thereby increasing the photocurrent by the additional VB {yields} IB and IB {yields} CB absorptions. The confined electron levels of self-assembled quantum dots (QDs) were proposed as potential candidates for the implementation of such an IB. Here we report experimental and theoretical investigations on In{sub y}Ga{sub 1-y}As dots in a GaAs{sub 1-x}P{sub x} matrix, examining its suitability for acting as IBSCs. The system has the advantage of allowing strain symmetrization within the structure, thus enabling the growth of a large number of defect-free QD layers, despite the significant size mismatch between the dot material and the surrounding matrix. We examine the various conditions related to the optimum functionality of the IBSC, in particular those connected to the optical and electronic properties of the system. We find that the intensity of absorption between QD-confined electron states and host CB is weak because of their localized-to-delocalized character. Regarding the position of the IB within the matrix band gap, we find that, whereas strain symmetrization can indeed permit growth of multiple dot layers, the current repertoire of GaAs{sub 1-x}P{sub x} barrier materials, as well as In{sub y}Ga{sub 1-y} As dot materials, does not satisfy the ideal energetic locations for the IB. We conclude that other QD systems must be considered for QD-IBSC implementations.

Popescu, V.; Bester, G.; Hanna, M. C.; Norman, A. G.; Zunger, A.

2008-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Proposed finding of no significant impact for the Sakakawea Medical Center coal-fired heating plant  

SciTech Connect (OSTI)

The Department of Energy (the Department) has prepared an environmental assessment (Assessment) (DOE/EA-0949) to identify and evaluate the potential environmental impacts of a proposed action at the Sakakawea Medical Center (the Center) in Hazen, North Dakota. The proposed action would replace the existing No. 2 fuel oil-fired boilers supplemented by electric reheat with a new coal-fired hot water heating plant, using funds provided from a grant under the Institutional Conservation Program. Based on the analysis in DOE/EA-0949, the Department has determined that the proposed action is not a major federal action significantly affecting the quality of the human environment, within the meaning of the National Environmental Policy Act (NEPA) of 1969, as amended. Therefore, preparation of an Environmental Impact Statement is not required, and the Department is issuing this Finding of No Significant Impact (Finding).

Not Available

1994-07-01T23:59:59.000Z

242

STUDENT ADVISOR GUIDELINES PROPOSAL: ASSESSMENTS OF AND PROPOSED CHANGES  

E-Print Network [OSTI]

STUDENT ADVISOR GUIDELINES PROPOSAL: ASSESSMENTS OF AND PROPOSED CHANGES TO THE NJIT ADVISING PROCESS NEW JERSEY INSTITUTE OF TECHNOLOGY STUDENT SENATE STUDENT ADVISOR GUIDELINES COMMITTEE DECEMBER of NJIT as a whole. -2- #12;I. Students' Views of Advisors Obligations These are the recommendations

Bieber, Michael

243

Proposal  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar HomePromising Science for Plutonium Cleanup PromisingSalesMore MiniBooNE

244

Climate Action Plan (Ontario, Canada)  

Broader source: Energy.gov [DOE]

Climate Ready, Ontario's Adaptation Strategy and Action Plan, outlines the problems, goals, and key strategies for the province's approach to climate change and the problems it poses. The Plan...

245

ICDF Complex Remedial Action Report  

SciTech Connect (OSTI)

This Idaho CERCLA Disposal Facility (ICDF) Remedial Action Report has been prepared in accordance with the requirements of Section 6.2 of the INEEL CERCLA Disposal Facility Remedial Action Work Plan. The agency prefinal inspection of the ICDF Staging, Storage, Sizing, and Treatment Facility (SSSTF) was completed in June of 2005. Accordingly, this report has been developed to describe the construction activities completed at the ICDF along with a description of any modifications to the design originally approved for the facility. In addition, this report provides a summary of the major documents prepared for the design and construction of the ICDF, a discussion of relevant requirements and remedial action objectives, the total costs associated with the development and operation of the facility to date, and identification of necessary changes to the Agency-approved INEEL CERCLA Disposal Facility Remedial Action Work Plan and the ICDF Complex Operations and Maintenance Plan.

W. M. Heileson

2007-09-26T23:59:59.000Z

246

Climate Action Plan (New Hampshire)  

Broader source: Energy.gov [DOE]

29 members of Governor John Lynch’s Climate Change Policy Task Force developed a Climate Action Plan in 2009. It is aimed at achieving the greatest feasible reductions in greenhouse gas emissions...

247

Height stabilization of GaSb/GaAs quantum dots by Al-rich capping  

SciTech Connect (OSTI)

GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.

Smakman, E. P., E-mail: e.p.smakman@tue.nl; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven (Netherlands); DeJarld, M.; Martin, A. J.; Millunchick, J. [Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Luengo-Kovac, M.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2014-09-01T23:59:59.000Z

248

Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates  

SciTech Connect (OSTI)

The vertical bulk (drain-bulk) current (I{sub db}) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I{sub db} (25-300 Degree-Sign C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E{sub a}), the (soft or destructive) vertical breakdown voltage (V{sub B}), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E{sub a} = 0.35 eV at T = 25-300 Degree-Sign C; V{sub B} = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E{sub a} = 2.5 eV at T > 265 Degree-Sign C; V{sub B} > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E{sub a} = 0.35 eV at T > 150 Degree-Sign C; V{sub B} = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

Perez-Tomas, A.; Fontsere, A.; Llobet, J. [IMB-CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, CAT (Spain); Placidi, M. [IREC, Jardins Dones de Negre 1, 08930 Sant Adria de Besos, Barcelona (Spain); Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Baron, N. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); PICOGIGA International, Pl M. Rebuffat, Courtaboeuf 7, 91140 Villejust (France)

2013-05-07T23:59:59.000Z

249

Multiband GaNAsP Quaternary Alloys  

SciTech Connect (OSTI)

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

2005-12-08T23:59:59.000Z

250

OVERVIEW OF PROPOSED TRANSPORTATION ENERGY  

E-Print Network [OSTI]

...............................................................................10 METHODOLOGY OF LONG-TERM FUEL DEMAND FORECAST ......................... 12 Introduction.................................................................................................................................................12 Purpose of California Petroleum Demand Forecast.......................................................................................................................4 PROPOSED CALIFORNIA TRANSPORTATION FUEL PRICE FORECASTS......... 6 Summary

251

Climate Action Champions Request for Applications | Department...  

Broader source: Energy.gov (indexed) [DOE]

Climate Action Champions Request for Applications Climate Action Champions Request for Applications October 27, 2014 5:00PM EDT Climate Action Champions On Oct. 1, 2014, the Obama...

252

UCSF Sustainability Action Plan: Executive Summary  

E-Print Network [OSTI]

UCSF Sustainability Action Plan: Executive Summary Issue Date: April 21, 2011 #12;UCSF Sustainability Action Plan Executive Summary April 21, 2011 Page 1 Table of Contents An Introduction to the Sustainability Action Plan

Yamamoto, Keith

253

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+  

E-Print Network [OSTI]

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

McKittrick, Joanna

254

AlGaAs/GaAs photovoltaic converters for high power narrowband radiation  

SciTech Connect (OSTI)

AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

2014-09-26T23:59:59.000Z

255

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

256

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect (OSTI)

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

257

Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding  

SciTech Connect (OSTI)

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

2006-01-01T23:59:59.000Z

258

Worldwide Energy Efficiency Action through Capacity Building...  

Open Energy Info (EERE)

and Training (WEACT) Jump to: navigation, search Logo: Worldwide Energy Efficiency Action through Capacity Building and Training (WEACT) Name Worldwide Energy Efficiency Action...

259

DOE Announces Additional Energy Efficiency Enforcement Action...  

Office of Environmental Management (EM)

Energy Efficiency Enforcement Action to Protect Consumers DOE Announces Additional Energy Efficiency Enforcement Action to Protect Consumers January 7, 2010 - 12:00am Addthis...

260

Energy Agency Coordinators for Energy Action Month  

Broader source: Energy.gov [DOE]

Agency coordinators serve as primary Federal agency points of contact for Energy Action Month. Contact them if you have questions about implementing an Energy Action Month campaign.

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Contract Pricing Proposal Cover Sheet UT-B Contracts Div Page 1 of 1  

E-Print Network [OSTI]

Contract Pricing Proposal Cover Sheet UT-B Contracts Div Mar 2006 Page 1 of 1 contract-price-prop-cover-ext-venx-mar06.doc CONTRACT PRICING PROPOSAL COVER SHEET 1. SOLICITATION /CONTRACT/MODIFICATION NUMBER 2a. NAME'S POINT OF CONTACT AREA CODE NUMBER 4. TYPE OF CONTRACT ACTION (Check)2c. STREET ADDRESS a. NEW CONTRACT c

Pennycook, Steve

262

22753Federal Register / Vol. 77, No. 74 / Tuesday, April 17, 2012 / Proposed Rules Public Involvement  

E-Print Network [OSTI]

, and impacts to be addressed in an EIS, and for identifying the significant issues related to the proposed this notice, NMFS is notifying the public that an EIS and decision-making process for this proposed action.noaa.gov/ sustainablefisheries/sslpm/eis/. Please visit this Web site for more information on this EIS and for guidance

263

MSENGR Product Design Program Proposal  

E-Print Network [OSTI]

MSENGR Product Design Program Proposal Rev 6/2007 p. 1 New Proposal Revision First graduate Language 3 ME216A Advanced Product Design: Need Finding 4 ME312 Advanced Product Design: Form Giving 4 ARTSTUDI160 Design II: The Bridge 3 ME216B Advanced Product Design: Implementation 4 ME316

Prinz, Friedrich B.

264

PROPOSED ENERGY PROVISIONS OF THE  

E-Print Network [OSTI]

PROPOSED ENERGY PROVISIONS OF THE CALIFORNIA GREEN BUILDING STANDARDS CODE PART 11 OF THE CALIFORNIA BUILDING CODE (also known as CalGreen) OCTOBER 2012 CEC400201201215DAY CALIFORNIA ENERGY;Proposed Energy Provisions of the California Green Building Standards Code Page 3 CHAPTER 4, RESIDENTIAL

265

Point defect balance in epitaxial GaSb  

SciTech Connect (OSTI)

Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

Segercrantz, N., E-mail: natalie.segercrantz@aalto.fi; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FIN-00076 Aalto Espoo (Finland); Song, Y.; Wang, S. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Göteborg (Sweden); State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 865 Changning Road, Shanghai 200050 (China)

2014-08-25T23:59:59.000Z

266

Environmental Assessment of Remedial Action at the Riverton Uranium Mill Tailings Site, Riverton, Wyoming  

SciTech Connect (OSTI)

The US Department of Energy (DOE) has prepared an environmental assessment (DOE/EA-0254) on the proposed remedial action at the inactive uranium milling site near Riverton, Wyoming. Based on the analyses in the EA, the DOE has determined that the proposed action does not constitute a major Federal action significantly affecting the quality of the human environment within the meaning of the National Environmental Policy Act (NEPA) of 1969 (42 U.S.C. 4321, et seq.). Therefore, the preparation of an environmental impact statement (EIS) is not required.

none,

1987-06-01T23:59:59.000Z

267

Corrective Action Decision Document for Corrective Action Unit 562: Waste Systems Nevada Test Site, Nevada, Revision 0  

SciTech Connect (OSTI)

This Corrective Action Decision Document (CADD) presents information supporting the selection of corrective action alternatives (CAAs) leading to the closure of Corrective Action Unit (CAU) 562, Waste Systems, in Areas 2, 23, and 25 of the Nevada Test Site, Nevada. This complies with the requirements of the Federal Facility Agreement and Consent Order (FFACO) that was agreed to by the State of Nevada; U.S. Department of Energy (DOE), Environmental Management; U.S. Department of Defense; and DOE, Legacy Management. Corrective Action Unit 562 comprises the following corrective action sites (CASs): • 02-26-11, Lead Shot • 02-44-02, Paint Spills and French Drain • 02-59-01, Septic System • 02-60-01, Concrete Drain • 02-60-02, French Drain • 02-60-03, Steam Cleaning Drain • 02-60-04, French Drain • 02-60-05, French Drain • 02-60-06, French Drain • 02-60-07, French Drain • 23-60-01, Mud Trap Drain and Outfall • 23-99-06, Grease Trap • 25-60-04, Building 3123 Outfalls The purpose of this CADD is to identify and provide the rationale for the recommendation of CAAs for the 13 CASs within CAU 562. Corrective action investigation (CAI) activities were performed from July 27, 2009, through May 12, 2010, as set forth in the CAU 562 Corrective Action Investigation Plan. The purpose of the CAI was to fulfill the following data needs as defined during the data quality objective (DQO) process: • Determine whether COCs are present. • If COCs are present, determine their nature and extent. • Provide sufficient information and data to complete appropriate corrective actions. A data quality assessment (DQA) performed on the CAU 562 data demonstrated the quality and acceptability of the data for use in fulfilling the DQO data needs. Analytes detected during the CAI were evaluated against appropriate final action levels (FALs) to identify the COCs for each CAS. The results of the CAI identified COCs at 10 of the 13 CASs in CAU 562, and thus corrective action is required. Assessment of the data generated from investigation activities conducted at CAU 562 is shown in Table ES-1. Based on the evaluation of analytical data from the CAI, review of future and current operations at the 13 CASs, and the detailed and comparative analysis of the potential CAAs, the following corrective actions are recommended for CAU 562. • No further action is the preferred corrective action for CASs 02-60-01, 02-60-06, and 02-60-07. • Clean closure is the preferred corrective action for CASs 02-26-11, 02-44-02, 02-59-01, 02-60-02, 02-60-03, 02-60-04, 02-60-05, 23-60-01, 23-99-06, and 25-60-04. The preferred CAAs were evaluated on technical merit focusing on performance, reliability, feasibility, safety, and cost. The alternatives were judged to meet all requirements for the technical components evaluated. The alternatives meet all applicable federal and state regulations for closure of the site and will reduce potential exposures to contaminated media to acceptable levels. The DOE, National Nuclear Security Administration Nevada Site Office provides the following recommendations: • No further corrective action is required at CASs 02-60-01, 02-60-06, and 02-60-07. • Clean closure is recommended for the remaining 10 CASs in CAU 562. • A Corrective Action Plan will be submitted to the Nevada Division of Environmental Protection that contains a detailed description of the proposed actions that will be taken to implement the selected corrective actions.

Mark Krause

2010-08-01T23:59:59.000Z

268

Guidance Regarding Actions That May Proceed During the NEPA Process...  

Energy Savers [EERE]

Regarding Actions That May Proceed During the NEPA Process: Interim Actions Guidance Regarding Actions That May Proceed During the NEPA Process: Interim Actions DOE guidance to...

269

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents [OSTI]

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

270

Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction  

SciTech Connect (OSTI)

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16° from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

2014-03-17T23:59:59.000Z

271

Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire  

SciTech Connect (OSTI)

The asymmetric dual-wavelength (green/blue) coupled InGaN/GaN multiple quantum wells were proposed to modulate the green emission intensity. Electroluminescent measurements demonstrate the conspicuous increment of the green light intensity by decreasing the coupled barrier thickness. This was partly attributed to capture of more carriers when holes tunnel across the thinner barrier from the blue quantum wells, as a hole reservoir, to the green quantum wells. While lower effective barrier height of the blue quantum wells benefits improved hole transportation from p-GaN to the active region. Efficiency droop of the green quantum wells was partially alleviated due to the enhanced injection efficiency of holes.

Du, Chunhua; Ma, Ziguang; Zhou, Junming; Lu, Taiping; Jiang, Yang; Jia, Haiqiang; Liu, Wuming; Chen, Hong, E-mail: hchen@iphy.ac.cn [Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

2014-04-14T23:59:59.000Z

272

Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure  

SciTech Connect (OSTI)

Photoluminescence was studied in GaAs/AlGaAs nanowires (NWs) with different radial heterostructures. We demonstrated that manipulation of the emission energy may be achieved by appropriate choice of the shell structure. The emission at highest energy is generated in the NWs with tunneling thin AlGaAs inner shell and thin GaAs outer shell due to recombination of the photoexcited electrons confined in the outer shell with the holes in the core. Lower energy emission was shown to occur in the NWs with thick outer shell grown in the form of a short-period GaAs/AlGaAs multiple quantum well structure. In this case, the tunneling probability through the multiple quantum wells controls the energy emitted by the NWs. The doping of core results in dominated low energy emission from the GaAs core.

Barbosa, B. G.; Arakaki, H.; Souza, C. A. de; Pusep, Yu. A. [Instituto de Fisica de São Carlos, Universidade de São Paulo, 13560-970 Sao Carlos, SP (Brazil)

2014-03-21T23:59:59.000Z

273

EIS-0385: Notice of Proposed Floodplain and Wetland Actions | Department of  

Broader source: Energy.gov (indexed) [DOE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarly Career Scientists'Montana.Program - LibbyofThis EIS evaluates theOrange County,

274

Appliance Standard Program - The FY 2003 Priority -Setting Summary Report and Actions Proposed  

Broader source: Energy.gov (indexed) [DOE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarly Career Scientists' ResearchThe OfficeUtility Fed.9-0s)Excel workbook (version 5.2) isofAndrea

275

Appliance Standard Program - The FY 2003 Priority -Setting Summary Report and Actions Proposed - Appendix B  

Broader source: Energy.gov (indexed) [DOE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarly Career Scientists' ResearchThe OfficeUtility Fed.9-0s)Excel workbook (version 5.2) isofAndreaAPPENDIX B:

276

Appliance Standards Program - The FY 2003 Priority Setting Report and Actions Proposed - Appendix C  

Broader source: Energy.gov (indexed) [DOE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarly Career Scientists' ResearchThe OfficeUtility Fed.9-0s)Excel workbook (version 5.2) isofAndreaAPPENDIX

277

Appliance Standards Program - The FY 2003 Priority Setting Report and Actions Proposed -Appendix A  

Broader source: Energy.gov (indexed) [DOE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarly Career Scientists' ResearchThe OfficeUtility Fed.9-0s)Excel workbook (version 5.2)

278

CEQ Guidance on the Application of NEPA to Proposed Federal Actions in the  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-Up fromDepartmentTie Ltd:June 2015 <Ones | DepartmentCEE Winter ProgramRequireUnited

279

Title 40 CFR 1502.14 Alternatives Including the Proposed Action | Open  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov Pty LtdSteen,Ltd Jump JumpAl.,Information EPA AdministeredNEPA andLegalEnergy

280

Proposal of Removal Action in the Southeast Drainage. SE-200-201-1.07.  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCT 28 1%AU62 & 199344 2004 GJt : -.

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Quarry Waste Removal Proposed Plan Weldon Spring Site Remedial Action Project, Weldon Spring Missouri.  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCT 28 1%AU62 & 199344 2004 GJtQR, I

282

Transcript of Proceedings: Quarry Waste Removal Proposed Plan Weldon Spring Site Remedial Action Projec  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCTTO: FILE FROM:DEC. i_ T,~,,...iU7,

283

Final voluntary release assessment/corrective action report  

SciTech Connect (OSTI)

The US Department of Energy, Carlsbad Area Office (DOE-CAO) has completed a voluntary release assessment sampling program at selected Solid Waste Management Units (SWMUs) at the Waste Isolation Pilot Plant (WIPP). This Voluntary Release Assessment/Corrective Action (RA/CA) report has been prepared for final submittal to the Environmental protection Agency (EPA) Region 6, Hazardous Waste Management Division and the New Mexico Environment Department (NMED) Hazardous and Radioactive Materials Bureau to describe the results of voluntary release assessment sampling and proposed corrective actions at the SWMU sites. The Voluntary RA/CA Program is intended to be the first phase in implementing the Resource Conservation and Recovery Act (RCRA) Facility Investigation (RFI) and corrective action process at the WIPP. Data generated as part of this sampling program are intended to update the RCRA Facility Assessment (RFA) for the WIPP (Assessment of Solid Waste Management Units at the Waste Isolation Pilot Plant), NMED/DOE/AIP 94/1. This Final Voluntary RA/CA Report documents the results of release assessment sampling at 11 SWMUs identified in the RFA. With this submittal, DOE formally requests a No Further Action determination for these SWMUs. Additionally, this report provides information to support DOE`s request for No Further Action at the Brinderson and Construction landfill SWMUs, and to support DOE`s request for approval of proposed corrective actions at three other SWMUs (the Badger Unit Drill Pad, the Cotton Baby Drill Pad, and the DOE-1 Drill Pad). This information is provided to document the results of the Voluntary RA/CA activities submitted to the EPA and NMED in August 1995.

NONE

1996-11-12T23:59:59.000Z

284

CLIMATE ACTION PLAN JUNE 1, 2010  

E-Print Network [OSTI]

UC DAVIS 2009­2010 CLIMATE ACTION PLAN JUNE 1, 2010 #12;UC Davis 2009-2010 Climate Action Plan Page 2 UC DAVIS 2009-2010 CLIMATE ACTION PLAN TABLE OF CONTENTS Acknowledgements...................................................................................................... 24 Chapter 3: Emissions Reduction Actions 3.1 Energy Use Reduction to Date

Schladow, S. Geoffrey

285

Exploiting Processor Groups to Extend Scalability of the GA Shared Memory Programming Model  

SciTech Connect (OSTI)

Exploiting processor groups is becoming increasingly important for programming next-generation high-end systems composed of tens or hundreds of thousands of processors. This paper discusses the requirements, functionality and development of multilevel-parallelism based on processor groups in the context of the Global Array (GA) shared memory programming model. The main effort involves management of shared data, rather than interprocessor communication. Experimental results for the NAS NPB Conjugate Gradient benchmark and a molecular dynamics (MD) application are presented for a Linux cluster with Myrinet and illustrate the value of the proposed approach for improving scalability. While the original GA version of the CG benchmark lagged MPI, the processor-group version outperforms MPI in all cases, except for a few points on the smallest problem size. Similarly, the group version of the MD application improves execution time by 58% on 32 processors.

Nieplocha, Jarek; Krishnan, Manoj Kumar; Palmer, Bruce J.; Tipparaju, Vinod; Zhang, Yeliang

2005-05-04T23:59:59.000Z

286

Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes  

SciTech Connect (OSTI)

The gain and photoresponse characteristics have been numerically studied for back-illuminated separate absorption and multiplication (SAM) GaN avalanche photodiodes (APDs). The parameters of fundamental models are calibrated by simultaneously comparing the simulated dark and light current characteristics with the experimental results. Effects of environmental temperatures and device dimensions on gain characteristics have been investigated, and a method to achieve the optimum thickness of charge layer is obtained. The dependence of gain characteristics and breakdown voltage on the doping concentration of the charge layer is also studied in detail to get the optimal charge layer. The bias-dependent spectral responsivity and quantum efficiency are then presented to study the photoresponse mechanisms inside SAM GaN APDs. It is found the responsivity peak red-shifts at first due to the Franz-Keldysh effect and then blue-shifts due to the reach-through effect of the absorption layer. Finally, a new SAM GaN/AlGaN heterojunction APD structure is proposed for optimizing SAM GaN APDs.

Wang, Xiaodong; Pan, Ming; Hou, Liwei; Xie, Wei [No. 50 Research Institute of China Electronics Technology Group Corporation, 200331 Shanghai (China); Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn; Xu, Jintong; Li, Xiangyang; Chen, Xiaoshuang, E-mail: xschen@mail.sitp.ac.cn; Lu, Wei [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai (China)

2014-01-07T23:59:59.000Z

287

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell  

SciTech Connect (OSTI)

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-01-01T23:59:59.000Z

288

Graphene membranes and the Dirac-Born-Infeld action  

E-Print Network [OSTI]

We propose the use of the Dirac-Born-Infeld action in the phenomenological description of graphene sheet dynamics and interactions. Both the electronic properties of the Dirac fermions and the overall dynamics can be incorporated into this model. Classical static configurations, as well as quantum fluctuations of the membrane degrees of freedom can be studied in this framework. This makes it an interesting tool for Casimir physics and novel QED processes.

James Babington

2011-07-08T23:59:59.000Z

289

Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells  

SciTech Connect (OSTI)

In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Carrington, P. J.; Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2014-01-07T23:59:59.000Z

290

Efficiency enhancement of InGaN/GaN solar cells with nanostructures  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

2014-02-03T23:59:59.000Z

291

Graphene in ohmic contact for both n-GaN and p-GaN  

SciTech Connect (OSTI)

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26T23:59:59.000Z

292

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates  

E-Print Network [OSTI]

.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

Nabben, Reinhard

293

Know the symptoms. Take action.  

E-Print Network [OSTI]

1 " " Know the symptoms. Take action. heart attack c a l l Don't Take a Chance With a Heart Attack: Know the Facts and Act Fast More than 1 million people in the United States have heart attacks each attack happens, delay in treatment can be deadly. Learn the warning symptoms of a heart attack, and know

Bandettini, Peter A.

294

Know the symptoms. Take action.  

E-Print Network [OSTI]

heart attack Know the symptoms. Take action. c a l l Important Information Fill out the next two:____________________________ Home phone:_______________________ Work phone: ________________________ December 2011 #12;Heart Attack might be having heart attack symptoms or a heart attack, call 9­1­1 immediately. Don't ignore your pain

Bandettini, Peter A.

295

Climate Change Action Plan Report  

E-Print Network [OSTI]

Climate Change Action Plan Report Intermountain Region 2013 National Park Service Resource Stewardship and Science Landscape Conservation and Climate Change Division #12;About this Report Each National Park Service is responding to the challenge of climate change; and (2) raise awareness among NPS

Hansen, Andrew J.

296

Climate Action Champions Informational Webinar  

Broader source: Energy.gov [DOE]

An informational webinar will be held on Thursday, Oct. 9 from 1:00 p.m. - 3:00 p.m. Eastern Standard Time (EST) to provide applicants with an overview of the Climate Action Champions opportunity, the application process, and answer any questions.

297

Action of manganese on puberty  

E-Print Network [OSTI]

to Mn than adults, we wanted to determine the effects of Mn exposure on puberty-related hormones and the onset of puberty, and discern the site and mechanism of Mn action. We demonstrated that the central administration of manganese chloride (MnCl2...

Lee, Bo Yeon

2007-09-17T23:59:59.000Z

298

CLIMATE ACTION PLAN SEPTEMBER 2009  

E-Print Network [OSTI]

CLIMATE ACTION PLAN SEPTEMBER 2009 UNIVERSITY OF NEW MEXICO · OFFICE OF SUSTAINABILITY · ALBUQUERQUE, NEW MEXICO #12;#12;The University of New Mexico is committed to reducing energy usage and our d. Policy 2100 "Sustainability"............ 53 e. Policy 5100 "Energy Management" 58 B. Future

Maccabe, Barney

299

Standard Form 424 PROPOSAL INFORMATION SUMMARY  

E-Print Network [OSTI]

this proposal been submitted to any other agency for funding, if so, which? No 13. Proposal Abstract: See .................................................................................................................. 3 Abstract ............................................................................. 10 Proposed Work

Menke, William

300

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect (OSTI)

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Néel, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Wavelength limits for InGaN quantum wells on GaN  

SciTech Connect (OSTI)

The emission wavelength of coherently strained InGaN quantum wells (QW) is limited by the maximum thickness before relaxation starts. For high indium contents x>40% the resulting wavelength decreases because quantum confinement dominates. For low indium content x<40% the electron hole wave function overlap (and hence radiative emission) is strongly reduced with increasing QW thickness due to the quantum confined Stark effect and imposes another limit. This results in a maximum usable emission wavelength at around 600?nm for QWs with 40%-50% indium content. Relaxed InGaN buffer layers could help to push this further, especially on non- and semi-polar orientations.

Pristovsek, Markus, E-mail: markus@pristovsek.de [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)] [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)

2013-06-17T23:59:59.000Z

302

Application of the ASME code in the design of the GA-4 and GA-9 casks  

SciTech Connect (OSTI)

General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

Mings, W.J. (USDOE Idaho Field Office, Idaho Falls, ID (United States)); Koploy, M.A. (General Atomics, San Diego, CA (United States))

1992-01-01T23:59:59.000Z

303

Application of the ASME code in the design of the GA-4 and GA-9 casks  

SciTech Connect (OSTI)

General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

Mings, W.J. [USDOE Idaho Field Office, Idaho Falls, ID (United States); Koploy, M.A. [General Atomics, San Diego, CA (United States)

1992-08-01T23:59:59.000Z

304

Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces  

SciTech Connect (OSTI)

We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

2013-08-12T23:59:59.000Z

305

Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots  

SciTech Connect (OSTI)

In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074, Würzburg (Germany); Igusa, R.; Iwamoto, S.; Arakawa, Y. [University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2014-09-15T23:59:59.000Z

306

AlGaAs/GaAs quantum well infrared detectors and modulators  

E-Print Network [OSTI]

to the quantum well. This optical transition wavelength lies in the mid infrared region of the spectrum. To get a more realistic picture of the optical transition in a 1-D quantum well, the non-parabolicity of the conduction band of GaAs is taken... into consideration. Further it is seen that with the change in temperature and doping concentration the width and peak of the absorption curve also changes. Based on the above calculations and results an AIGaAs/GaAs quantum well infrared photodetector...

Dave, Digant Praful

1990-01-01T23:59:59.000Z

307

Radiation Hard AlGaN Detectors and Imager  

SciTech Connect (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

308

Final Environmental Assessment of remedial action at the Falls City uranium mill tailings site, Falls City, Texas  

SciTech Connect (OSTI)

This environmental assessment (EA) is prepared pursuant to the National Environmental Policy Act (NEPA), which requires Federal agencies to assess the impacts that their actions may have on the environment. This EA examines the short- and long-term effects of the DOE`s proposed remedial action for the Falls City tailings site. The no action alternative is also examined. The DOE will use the information and analyses presented here to determine whether the proposed action would have a significant impact on the environment. If the impacts are determined to be significant, an EIS will be prepared. If the impacts are not judged to be significant, the DOE will issue an official ``Finding of No Significant Impact`` and implement the proposed action.

Not Available

1991-12-01T23:59:59.000Z

309

CORRECTIVE ACTION PLAN FOR CORRECTIVE ACTION UNIT 543: LIQUID DISPOSAL UNITS, NEVADA TEST SITE, NEVADA  

SciTech Connect (OSTI)

The purpose of this Corrective Action Plan is to provide the detailed scope of work required to implement the recommended corrective actions as specified in the approved Corrective Action Decision Document.

NONE

2006-09-01T23:59:59.000Z

310

Climate Change Proposed Scoping Plan  

E-Print Network [OSTI]

Climate Change Proposed Scoping Plan a amework for change Prepared by the California Air Resources #12;CLIMATE CHANGE SCOPING PLAN State of California Air Resources Board Resolution 08-47 December 11 greenhouse gas (GHG) emissions that cause global warming; WHEREAS, the adverse impacts of climate change

311

Climate Change Proposed Scoping Plan  

E-Print Network [OSTI]

Climate Change Proposed Scoping Plan a amework for change Prepared by the California Air ResourcesBackgroundBackgroundBackground ............................................................................................................................................................................................................................................................................................................................................................................................................ 4444 1. Climate Change Policy in California1. Climate Change Policy in California1. Climate Change Policy in California1. Climate Change Policy in California

312

Corporate and Foundation Proposal Checklist  

E-Print Network [OSTI]

Corporate and Foundation Proposal Checklist For additional information or assistance, please contact the MSU Foundation Office of Corporate and Foundation Relations at 994-2522 MSU Mission Statement MSU Foundation Mission Statement Needs Statement States the need using hard-core statistics

Dyer, Bill

313

Update: Proposed CE Curriculum & Program  

E-Print Network [OSTI]

Update: Proposed CE Curriculum & Program Bruce Jacob, End of Summer 2008 #12;What's all this, then, students, graduates · Held constituents' meeting over winter · Group vote this curriculum Barua has agreed to develop and teach the course ENEE 3xx (Digital systems) -- new course Bruce Jacob

Jacob, Bruce

314

Proposed Revisions for Regents Policy  

E-Print Network [OSTI]

Proposed Revisions for Regents Policy: Faculty Tenure Arlene Carney Vice Provost for Faculty family friendliness for probationary period #12;Basis for Revisions of Faculty Tenure Policy · Changed definitions of Academic Freedom and Responsibility required changes in the tenure policy. · As more untenured

Amin, S. Massoud

315

Supplementary Proposal Department of Energy  

E-Print Network [OSTI]

Supplementary Proposal to the Department of Energy High Energy Physics Division for Research and Development for a Bottom Collider Detector in FY 1990 (January 31, 1990) R. Burnstein, H. Rubin Illinois Institute of Technology E. McCliment, Y. Onel U. Iowa N.S. Lockyer, R. van Berg U. Pennsylvania J

McDonald, Kirk

316

Impact of defects on the electrical transport, optical properties and failure mechanisms of GaN nanowires.  

SciTech Connect (OSTI)

We present the results of a three year LDRD project that focused on understanding the impact of defects on the electrical, optical and thermal properties of GaN-based nanowires (NWs). We describe the development and application of a host of experimental techniques to quantify and understand the physics of defects and thermal transport in GaN NWs. We also present the development of analytical models and computational studies of thermal conductivity in GaN NWs. Finally, we present an atomistic model for GaN NW electrical breakdown supported with experimental evidence. GaN-based nanowires are attractive for applications requiring compact, high-current density devices such as ultraviolet laser arrays. Understanding GaN nanowire failure at high-current density is crucial to developing nanowire (NW) devices. Nanowire device failure is likely more complex than thin film due to the prominence of surface effects and enhanced interaction among point defects. Understanding the impact of surfaces and point defects on nanowire thermal and electrical transport is the first step toward rational control and mitigation of device failure mechanisms. However, investigating defects in GaN NWs is extremely challenging because conventional defect spectroscopy techniques are unsuitable for wide-bandgap nanostructures. To understand NW breakdown, the influence of pre-existing and emergent defects during high current stress on NW properties will be investigated. Acute sensitivity of NW thermal conductivity to point-defect density is expected due to the lack of threading dislocation (TD) gettering sites, and enhanced phonon-surface scattering further inhibits thermal transport. Excess defect creation during Joule heating could further degrade thermal conductivity, producing a viscous cycle culminating in catastrophic breakdown. To investigate these issues, a unique combination of electron microscopy, scanning luminescence and photoconductivity implemented at the nanoscale will be used in concert with sophisticated molecular-dynamics calculations of surface and defect-mediated NW thermal transport. This proposal seeks to elucidate long standing material science questions for GaN while addressing issues critical to realizing reliable GaN NW devices.

Armstrong, Andrew M.; Aubry, Sylvie; Shaner, Eric Arthur; Siegal, Michael P.; Li, Qiming; Jones, Reese E.; Westover, Tyler; Wang, George T.; Zhou, Xiao Wang; Talin, Albert Alec; Bogart, Katherine Huderle Andersen; Harris, C. Thomas; Huang, Jian Yu

2010-09-01T23:59:59.000Z

317

Action  

National Nuclear Security Administration (NNSA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartmentStewardshipAdministration helps INITIATED BY: INITIATEDLos

318

The two-qubit controlled-phase gate based on cross-phase modulation in GaAs/AlGaAs semiconductor quantum wells  

E-Print Network [OSTI]

We present a realization of two-qubit controlled-phase gate, based on the linear and nonlinear properties of the probe and signal optical pulses in an asymmetric GaAs/AlGaAs double quantum wells. It is shown that, in the presence of cross-phase modulation, a giant cross-Kerr nonlinearity and mutually matched group velocities of the probe and signal optical pulses can be achieved while realizing the suppression of linear and self-Kerr optical absorption synchronously. These characteristics serve to exhibit an all-optical two-qubit controlled-phase gate within efficiently controllable photon-photon entanglement by semiconductor mediation. In addition, by using just polarizing beam splitters and half-wave plates, we propose a practical experimental scheme to discriminate the maximally entangled polarization state of two-qubit through distinguishing two out of the four Bell states. This proposal potentially enables the realization of solid states mediated all-optical quantum computation and information processing.

X. Q. Luo; D. L. Wang; H. Fan; W. M. Liu

2012-01-17T23:59:59.000Z

319

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique  

SciTech Connect (OSTI)

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

320

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network [OSTI]

after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

O?[]O? nuclear ?-decay of ?²Ga  

E-Print Network [OSTI]

information, MARS was focused such that only fully stripped N=Z ions were passed, with the vast majority of them being Ga. The second phase of the experiment was a I3-y coincidence experiment. At the back-end of MARS, a 1" x 1 '!4" x 3" four..., using the Weinberg-Salam model of electroweak interactions, to be [23]: A& ? d, ?= ? [41n(mz/m )+ln(m /m?)+2K+A +" ]. (16) Here mz is the mass of the Z boson, me the proton mass, mx is the low energy cutoff for the second and third terms that arise...

Hyman, Bruce Carl

1999-01-01T23:59:59.000Z

322

General Atomics (GA) | Princeton Plasma Physics Lab  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert Southwest Region service area. TheEPSCIResearch to sponsorGeneral Atomics (GA)

323

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpen EnergyBoard" form. To create aGA SNC Solar Jump to:

324

WOODS FOR LEARNING ACTION PLAN 2010-2013 Objective National Indicators Specific actions  

E-Print Network [OSTI]

WOODS FOR LEARNING ACTION PLAN 2010-2013 Objective National Indicators Specific actions Lead positive inspection reports Develop Forest Kindergarten with nurseries in both private and state sectors

325

Neighborhood Progress Through Organized Action.  

E-Print Network [OSTI]

[Blank Page in Original Bulletin] ~ei~ h borhood Progress Through Organized Action E. C. MARTIN, Administrative Assistant BONNIE COX, Organization Specialist MRS. EULA NEWMAN, Specialist in Home Management TEXAS A. & M. COLLEGE SYSTEM "The... coord: lent r peo plt 1. mmunity organization is successful when all families erested groups participate. Such an organization may inate interest in the community and provide an excel- neans for channeling most programs. The interest...

Newman, Eula; Cox, Bonnie; Martin, E. C.

1955-01-01T23:59:59.000Z

326

Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells  

SciTech Connect (OSTI)

In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

2014-01-21T23:59:59.000Z

327

Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat  

E-Print Network [OSTI]

Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

Shepelyansky, Dima

328

Composition dependent valence band order in c-oriented wurtzite AlGaN layers  

SciTech Connect (OSTI)

The valence band order of polar wurtzite aluminum gallium nitride (AlGaN) layers is analyzed for a dense series of samples, grown heteroepitaxially on sapphire substrates, covering the complete composition range. The excitonic transition energies, found by temperature dependent photoluminescence (PL) spectroscopy, were corrected to the unstrained state using input from X-ray diffraction. k?p theory yields a critical relative aluminum concentration x{sub c}=(0.09±0.05) for the crossing of the uppermost two valence bands for strain free material, shifting to higher values for compressively strained samples, as supported by polarization dependent PL. The analysis of the strain dependent valence band crossing reconciles the findings of other research groups, where sample strain was neglected. We found a bowing for the energy band gap to the valence band with ?{sub 9} symmetry of b{sub ?{sub 9}}=0.85eV, and propose a possible bowing for the crystal field energy of b{sub cf}=?0.12eV. A comparison of the light extraction efficiency perpendicular and parallel to the c axis of Al{sub x}Ga{sub 1-x}N/Al{sub y}Ga{sub 1-y}N quantum well structures is discussed for different compositions.

Neuschl, B., E-mail: benjamin.neuschl@uni-ulm.de; Helbing, J.; Knab, M.; Lauer, H.; Madel, M.; Thonke, K. [Institute of Quantum Matter / Semiconductor Physics Group, University of Ulm, Albert-Einstein-Allee 45, 89069 Ulm (Germany); Meisch, T.; Forghani, K.; Scholz, F. [Institute of Optoelectronics, University of Ulm, Albert-Einstein-Allee 45, 89069 Ulm (Germany); Feneberg, M. [Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg (Germany)

2014-09-21T23:59:59.000Z

329

Novel attributes in modeling and optimizing of the new graphene based In{sub x}Ga{sub 1?x}N Schottky barrier solar cells  

SciTech Connect (OSTI)

Based on the ability of In{sub x}Ga{sub 1?x}N materials to optimally span the solar spectrum and their superior radiation resistance, solar cells based on p-type In{sub x}Ga{sub 1?x}N with low indium contents and interfacing with graphene film (G/In{sub x}Ga{sub 1?x}N), is proposed to exploit the benefit of transparency and work function tunability of graphene. Then, their solar power conversion efficiency modeled and optimized using a new analytical approach taking into account all recombination processes and accurate carrier mobility. Furthermore, their performance was compared with graphene on silicon counterparts and G/p-In{sub x}Ga{sub 1?x}N showed relatively smaller short-circuits current (?7?mA/cm{sup 2}) and significantly higher open-circuit voltage (?4?V) and efficiency (?30%). The thickness, doping concentration, and indium contents of p-In{sub x}Ga{sub 1?x}N and graphene work function were found to substantially affect the performance of G/p-In{sub x}Ga{sub 1?x}N.

Arefinia, Zahra [Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz 51666-14766 (Iran, Islamic Republic of); Asgari, Asghar, E-mail: asgari@tabrizu.ac.ir [Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz 51666-14766 (Iran, Islamic Republic of); School of Electrical, Electronic, and Computer Engineering, University of Western Australia, Crawley, WA 6009 (Australia)

2014-05-21T23:59:59.000Z

330

Development of a Bulk GaN Growth Technique for Low Defect Density...  

Broader source: Energy.gov (indexed) [DOE]

current due to bulk defects GaN is Grown Heteroepitaxially on Sapphire (and Silicon Carbide) Substrates * As grown GaN nucleation layers contain disordered GaN with many...

331

5 Putting Science into Action on Forest  

E-Print Network [OSTI]

5 Putting Science into Action on Forest Service Lands William M. Block u.s. Forest Service, Rocky into Action on Forest Service Lands t':: Research and Development, National Forest Systems, State and Private Forestry, International Programs

332

Emergence and perceptual guidance of prehensile action   

E-Print Network [OSTI]

Successful coordination of prehensile action depends upon the selection and control of appropriate reach and grasp movements. This thesis explores how prehensile actions are shaped and regulated by perceptual information. ...

Smith, Joanne

2009-01-01T23:59:59.000Z

333

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect (OSTI)

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

334

Issues in the design of high-performance contacts to GaInAs TPV converters  

SciTech Connect (OSTI)

GaInAs is being investigated for use in the fabrication of thermophotovoltaic power conversion devices. In this paper a front surface grid metallization system composed of evaporated layers of Ti/Pd/Ag is proposed for these devices. The contacts are characterized and computer modeling techniques are used to predict the impact that they will have on the performance of these devices. Issues related to measurement conventions and their impact on the optimum design of these contacts is discussed. The effects on the optimum grid design of a system's ability to re-use photons reflected off of the metallization is also investigated.

Ward, J.S.; Wanlass, M.W.; Wu, X.; Coutts, T.J. (National Renewable Energy Laboratory Golden Colorado (United States))

1995-01-05T23:59:59.000Z

335

Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model  

SciTech Connect (OSTI)

We propose a model to better investigate InGaN light-emitting diode (LED) internal efficiency by extending beyond the usual total carrier density rate equation approach. To illustrate its capability, the model is applied to study intrinsic performance differences between violet and green LEDs. The simulations show performance differences, at different current densities and temperatures, arising from variations in spontaneous emission and heat loss rates. By tracking the momentum-resolved carrier populations, these rate changes are, in turn, traced to differences in bandstructure and plasma heating. The latter leads to carrier distributions that deviate from the quasiequilibrium ones at lattice temperature.

Chow, Weng W.; Crawford, Mary H.; Tsao, Jeffrey Y.; Kneissl, Michael

2010-01-01T23:59:59.000Z

336

Damage Evolution in GaN Under MeV Heavy Ion Implantation. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed Newcatalyst phases onOrganizationElectronic2005-2007 BudgetFlightEvolution in GaN

337

n-lnAs/GaAs heterostructure superconducting weak Hnks with Nb A. W. Kleinsasser, T. N. Jackson, G. D. Pettit, H. Schmid, J. M. Woodall, and  

E-Print Network [OSTI]

1986) We report on the fabrication and characterization of planar superconductor-normal- superconductor-effect transistors (FETs), 1-4 which were first proposed a number of years ago.5 - 7 These are superconductor-normal-superconductorn-lnAs/GaAs heterostructure superconducting weak Hnks with Nb electrodes A. W. Kleinsasser, T. N

Woodall, Jerry M.

338

AFFIRMATIVE ACTION PLAN FOR VETERANS AND  

E-Print Network [OSTI]

creates a private right of action on behalf of any individual or group against the Health Center. #12AFFIRMATIVE ACTION PLAN FOR VETERANS AND INDIVIDUALS WITH DISABILITIES University of Connecticut Health Center UCHC Farmington, CT July 1, 2008 - June 30, 2009 #12;AFFIRMATIVE ACTION PLAN FOR VETERANS

Oliver, Douglas L.

339

CoNiGa High Temperature Shape Memory Alloys  

E-Print Network [OSTI]

commercially successful SMAs such as NiTi and Cu-based alloys. In recent years, the CoNiGa system has emerged as a new ferromagnetic shape memory alloy with some compositions exhibiting high martensitic transformation temperatures which makes CoNiGa a potential...

Dogan, Ebubekir

2011-10-21T23:59:59.000Z

340

Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n-lnGaAs/lnP/p-InGaAs heterostructures  

E-Print Network [OSTI]

Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n (Received 23 November 1992; accepted for publication 4 March 1993) The realization of collector-up light for the collector stripe definition. Electrons, injected over the wide-gap heterostructure barrier (InAlAs or In

Luryi, Serge

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Environmental assessment of remedial action at the Naturita Uranium Processing Site near Naturita, Colorado. Revision 4  

SciTech Connect (OSTI)

The Uranium Mill Tailings Radiation Control Act (UMTRCA) of 1978, Public Law (PL) 95-604, authorized the US Department of Energy (DOE) to perform remedial action at the Naturita, Colorado, uranium processing site to reduce the potential health effects from the radioactive materials at the site and at vicinity properties associated with the site. The US Environmental Protection Agency (EPA) promulgated standards for the UMTRCA that contain measures to control the contaminated materials and to protect groundwater quality. Remedial action at the Naturita site must be performed in accordance with these standards and with the concurrence of the US Nuclear Regulatory Commission (NRC) and the state of Colorado. The proposed remedial action for the Naturita processing site is relocation of the contaminated materials and debris to either the Dry Flats disposal site, 6 road miles (mi) [10 kilometers (km)] to the southeast, or a licensed non-DOE disposal facility capable of handling RRM. At either disposal site, the contaminated materials would be stabilized and covered with layers of earth and rock. The proposed Dry Flats disposal site is on land administered by the Bureau of Land Management (BLM) and used primarily for livestock grazing. The final disposal site would cover approximately 57 ac (23 ha), which would be permanently transferred from the BLM to the DOE and restricted from future uses. The remedial action would be conducted by the DOE`s Uranium Mill Tailings Remedial Action (UMTRA) Project. This report discusses environmental impacts associated with the proposed remedial action.

Not Available

1994-05-01T23:59:59.000Z

342

Environmental assessment of remedial action at the Naturita uranium processing site near Naturita, Colorado. Revision 3  

SciTech Connect (OSTI)

The proposed remedial action for the Naturita processing site is relocation of the contaminated materials and debris to the Dry Flats disposal site, 6 road miles (mi) [10 kilometers (km)] to the southeast. At the disposal site, the contaminated materials would be stabilized and covered with layers of earth and rock. The proposed disposal site is on land administered by the Bureau of Land Management (BLM) and used primarily for livestock grazing. The final disposal site would cover approximately 57 ac (23 ha), which would be permanently transferred from the BLM to the DOE and restricted from future uses. The remedial action activities would be conducted by the DOE`s Uranium Mill Tailings Remedial Action (UMTRA) Project. The proposed remedial action would result in the loss of approximately 162 ac (66 ha) of soils at the processing and disposal sites; however, 133 ac (55 ha) of these soils at and adjacent to the processing site are contaminated and cannot be used for other purposes. If supplemental standards are approved by the NRC and state of Colorado, approximately 112 ac (45 ha) of contaminated soils adjacent to the processing site would not be cleaned up. This area is steeply sloped. The cleanup of this contamination would have adverse environmental consequences and would be potentially hazardous to remedial action workers. Another 220 ac (89 ha) of soils would be temporarily disturbed during the remedial action. The final disposal site would result in approximately 57 ac (23 ha) being removed from livestock grazing and wildlife use.

Not Available

1994-02-01T23:59:59.000Z

343

Corrective Action Decision Document/Closure Report for Corrective Action Unit 309: Area 12 Muckpiles, Nevada Test Site, Nevada, Rev. No.: 0 with Errata Sheet  

SciTech Connect (OSTI)

This Corrective Action Decision Document/Closure Report (CADD/CR) has been prepared for Corrective Action Unit (CAU) 309, Area 12 Muckpiles, Nevada Test Site (NTS), Nevada. The corrective actions proposed in this document are according to the ''Federal Facility Agreement and Consent Order'' (FFACO) that was agreed to by the State of Nevada, U.S. Department of Energy (DOE), and the U.S. Department of Defense (FFACO, 1996). The NTS is approximately 65 miles (mi) northwest of Las Vegas, Nevada (Figure 1-1). Corrective Action Unit 309 is comprised of the three Corrective Action Sites (CASs) (Figure 1-1) listed below: (1) CAS 12-06-09, Muckpile; (2) CAS 12-08-02, Contaminated Waste Dump (CWD); and (3) CAS 12-28-01, I-, J-, and K-Tunnel Debris. Corrective Action Sites 12-06-09 and 12-08-02 will be collectively referred to as muckpiles in this document. Corrective Action Site 12-28-01 will be referred to as the fallout plume because of the extensive lateral area of debris and fallout contamination resulting from the containment failures of the J- and K-Tunnels. A detailed discussion of the history of this CAU is presented in the ''Corrective Action Investigation Plan (CAIP) for Corrective Action Unit 309: Area 12 Muckpiles, Nevada Test Site (NTS), Nevada.'' (NNSA/NSO, 2004). This CADD/CR provides justification for the closure of CAU 309 without further corrective action. This justification is based on process knowledge and the results of the investigative activities conducted according to the CAIP (NNSA/NSO, 2004), which provides information relating to the history, planning, and scope of the investigation. Therefore, this information will not be repeated in this CADD/CR.

Alfred Wickline

2005-12-01T23:59:59.000Z

344

Elastic properties of Pu metal and Pu-Ga alloys  

SciTech Connect (OSTI)

We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

2010-01-05T23:59:59.000Z

345

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications  

SciTech Connect (OSTI)

We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-03-24T23:59:59.000Z

346

Proposal Types | Advanced Photon Source  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar HomePromising Science for Plutonium CleanupProposalTeam: D.N. Basov 1

347

Technical Proposal Disclosure Policy - ITER  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystallineForeign ObjectOUR8, 2013Battelle: HowFrequentlyProposal

348

Evaluation Criteria for PDIL Proposal  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsing ZirconiaPolicy and Assistance100 ton StanatAccepted|the EffectCloudSat, ARM,

349

The Effect of SEC Enforcement Actions and Class Action Lawsuits on Peer Jared Jennings  

E-Print Network [OSTI]

environment in the U.S. is the prevalence of private class action lawsuits. In this paper, we investigateThe Effect of SEC Enforcement Actions and Class Action Lawsuits on Peer Firms Jared Jennings the SEC to deter potential miscreants via its enforcement actions against firms that indulge in fraudulent

Lin, Xiaodong

350

Numerical Tests of the Improved Fermilab Action  

E-Print Network [OSTI]

Recently, the Fermilab heavy-quark action was extended to include dimension-six and -seven operators in order to reduce the discretization errors. In this talk, we present results of the first numerical simulations with this action (the OK action), where we study the masses of the quarkonium and heavy-light systems. We calculate combinations of masses designed to test improvement and compare results obtained with the OK action to their counterparts obtained with the clover action. Our preliminary results show a clear improvement.

C. Detar; A. S. Kronfeld; M. B. Oktay

2010-11-23T23:59:59.000Z

351

Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach  

E-Print Network [OSTI]

Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high

Itoh, Tatsuo

352

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network [OSTI]

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

353

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations  

E-Print Network [OSTI]

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

354

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network [OSTI]

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

355

Fabrication of quantum point contacts by engraving GaAsAlGaAs heterostructures with a diamond tip  

E-Print Network [OSTI]

by hot-filament chemical vapor deposition of polycrystalline diamond onto a prepat- terned siliconFabrication of quantum point contacts by engraving GaAsÕAlGaAs heterostructures with a diamond tip for publication 17 July 2002 We use the all-diamond tip of an atomic force microscope for the direct engraving

Hohls, Frank

356

OPTIMIZATION OF GaN WINDOW LAYER FOR InGaN SOLAR CELLS USING POLARIZATION EFFECT  

E-Print Network [OSTI]

on the design of wide-band gap GaN window layers for InGaN solar cells. Window layers serve to passivate the top into account during design of the solar cell to improve its collection efficiency. Previously, we have. The present work is a subset of the design optimization process for such solar cells, where we focus

Honsberg, Christiana

357

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network [OSTI]

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm Ga...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

358

Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics  

E-Print Network [OSTI]

injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

Klotzkin, David

359

Diffusion of a Ga adatom on the GaAs(001)c(44)heterodimer surface: A first principles study  

E-Print Network [OSTI]

Diffusion of a Ga adatom on the GaAs(001)c(4×4)heterodimer surface: A first principles study J Diffusion barriers Reconstruction Density functional calculations The adsorption and diffusion behavior functional theory (DFT) computations in the local density approxima- tion. Structural and bonding features

Khare, Sanjay V.

360

Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields  

E-Print Network [OSTI]

Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures with increasing external electric field, with the radiative component exhibiting weaker field dependence. © 2009 applied electric field in Ref. 12, the electric field dependent radiative recombination in particular has

Demir, Hilmi Volkan

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures M. Geddo,1,a)  

E-Print Network [OSTI]

Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures M. Geddo,1,a) M. Patrini,1 G; accepted 5 May 2011; published online 20 June 2011) The effect of hydrogen irradiation on the optical for fiber optic communications. These promising results in view of the development of waveguides deserve

362

An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3  

E-Print Network [OSTI]

out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

363

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes  

E-Print Network [OSTI]

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

Wetzel, Christian M.

364

Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers  

E-Print Network [OSTI]

Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers C. Wetzel, Nagoya, Japan Received 11 December 1995; accepted for publication 21 February 1996 Infrared reflection, their alloys and potential substrates need to be investigated as well. Here we present a study of the infrared

Wetzel, Christian M.

365

Practical Action | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy ResourcesLoadingPenobscot County, Maine:Plug Power IncPowder River EnergyCubePractical Action Jump to:

366

Dynamo action in flows with  

E-Print Network [OSTI]

Dynamo action in flows with cat's eyes A l i c e C o u r v o i s i e r A n d r e w G i l b e r t Y of k for R = 500 and the flow (2.4) and (2.5). nts k = 2.5 and k = 5 are highlighted. Magnetic field). In (a) k = 2.5 and we have 0.5 max Bz (with max Bz 0.6 max |B|), and in (b) k = 5 and the levels .65 max

Li, Yi

367

Environmental analysis and data report prepared for the environmental assessment of remedial action at the Lowman uranium mill tailings site near Lowman, Idaho. [Urnanium Mill Tailings Remedial Action (UMTRA) Project  

SciTech Connect (OSTI)

This document contains information and data gathered in support of the preparation of the environmental assessment (EA) of the proposed remedial action at the Uranium Mill Tailings Remedial Action (UMTRA) Project site near Lowman, Idaho. The Lowman EA was prepared pursuant to the National Environmental Policy Act (NEPA), which requires Federal agencies to assess the effects of their actions on the environment. It examines the short-term and the long-term effects of the US Department of Energy's (DOE) proposed remedial action for the Lowman site as well as the no action alternative. The DOE will use the information and analyses presented in the EA to determine whether the proposed action would have a significant impact on the environment. If the impacts are determined to be significant, an environmental impact statement will be prepared. If the impacts are not judged to be significant, the DOE may issue a Finding of No Significant Impact and implement the proposed action. The information and data presented in this environmental analyses and data report are for background purposes only and are not required as part of the NEPA decision-making process.

Not Available

1991-01-01T23:59:59.000Z

368

Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings  

SciTech Connect (OSTI)

The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Carrington, P. J. [Department of Electronic and Electrical Engineering, University College London, London (United Kingdom); Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2014-07-28T23:59:59.000Z

369

Single photon emission from site-controlled InGaN/GaN quantum dots  

SciTech Connect (OSTI)

Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90?K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%–25% exhibited single photon emission at 10?K.

Zhang, Lei; Hill, Tyler A.; Deng, Hui, E-mail: dengh@umich.edu [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States)] [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States); Teng, Chu-Hsiang; Lee, Leung-Kway; Ku, Pei-Cheng, E-mail: peicheng@umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)] [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

2013-11-04T23:59:59.000Z

370

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure  

SciTech Connect (OSTI)

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04T23:59:59.000Z

371

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes  

SciTech Connect (OSTI)

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-07-07T23:59:59.000Z

372

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect (OSTI)

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

373

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues  

SciTech Connect (OSTI)

Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural features, but also to make inferences about the loss mechanisms responsible for LED efficiency droop at high driving currents. The limits of this investigative approach are discussed here in a case study based on a comprehensive set of current- and temperature-dependent EL data from blue LEDs with low and high densities of threading dislocations (TDs). First, the effects limiting the applicability of simpler (closed-form and/or one-dimensional) classes of models are addressed, like lateral current crowding, vertical carrier distribution nonuniformity, and interband transition broadening. Then, the major sources of uncertainty affecting state-of-the-art numerical device simulation are reviewed and discussed, including (i) the approximations in the transport description through the multi-quantum-well active region, (ii) the alternative valence band parametrizations proposed to calculate the spontaneous emission rate, (iii) the difficulties in defining the Auger coefficients due to inadequacies in the microscopic quantum well description and the possible presence of extra, non-Auger high-current-density recombination mechanisms and/or Auger-induced leakage. In the case of the present LED structures, the application of three-dimensional numerical-simulation-based analysis to the EL data leads to an explanation of efficiency droop in terms of TD-related and Auger-like nonradiative losses, with a C coefficient in the 10{sup ?30} cm{sup 6}/s range at room temperature, close to the larger theoretical calculations reported so far. However, a study of the combined effects of structural and model uncertainties suggests that the C values thus determined could be overestimated by about an order of magnitude. This preliminary attempt at uncertainty quantification confirms, beyond the present case, the need for an improved description of carrier transport and microscopic radiative and nonradiative recombination mechanisms in device-level LED numerical models.

Calciati, Marco; Vallone, Marco; Zhou, Xiangyu; Ghione, Giovanni [Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, corso Duca degli Abruzzi 24, 10129 Torino (Italy); Goano, Michele, E-mail: michele.goano@polito.it; Bertazzi, Francesco [Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, corso Duca degli Abruzzi 24, 10129 Torino (Italy); IEIIT-CNR, Politecnico di Torino, corso Duca degli Abruzzi 24, 10129 Torino (Italy); Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico [Dipartimento di Ingegneria dell'Informazione, Università di Padova, Via Gradenigo 6/B, 35131 Padova (Italy); Bellotti, Enrico [Department of Electrical and Computer Engineering, Boston University, 8 Saint Mary's Street, 02215 Boston, MA (United States); Verzellesi, Giovanni [Dipartimento di Scienze e Metodi dell'Ingegneria, Università di Modena e Reggio Emilia, 42122 Reggio Emilia (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

2014-06-15T23:59:59.000Z

374

Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well  

SciTech Connect (OSTI)

The relaxation of lattice-mismatched strain by deep postetching was systematically investigated for InGaN/GaN multiple quantum wells (MQWs). A planar heterojunction wafer, which included an In{sub 0.21}Ga{sub 0.79}N (3.2 nm)/GaN (14.8 nm) MQW, was etched by inductively coupled plasma dry etching, to fabricate high-density nanopillar, nanostripe, and nanohole arrays. The etching depth was 570 nm for all nanostructures. The diameter of the nanopillars was varied from 50 to 300 nm, then the mesa stripe width of the nanostripes and the diameter of the nanoholes were varied from 100 nm to 440 nm and 50 nm to 310 nm, respectively. The effect of strain relaxation on various optical properties was investigated. For example, in an array of nanopillars with diameter 130 nm and interval 250 nm, a large blueshift in the photoluminescence (PL) emission peak from 510 nm (as-grown) to 459 nm occurred at room temperature (RT). PL internal quantum efficiency (defined by the ratio of PL integral intensity at 300 K to that at 4.2 K) was enhanced from 34% (as-grown) to 60%, and the PL decay time at 4.2 K was reduced from 22 ns (as-grown) to 4.2 ns. These results clearly indicate the reduction of lattice-mismatched strain by postetching, which enhanced strain reduction with decreasing nanopillar diameter down to a diameter of 130 nm, where the strain reduction became saturated. The dependence of RT-PL decay time on nanopillar diameter was measured, and the surface nonradiative recombination velocity was estimated to be 5.8x10{sup 2} cm/s. This relatively slow rate indicates a little etching damage.

Ramesh, V.; Kikuchi, A.; Kishino, K. [Department of Electrical and Electronics Engineering, Sophia University, Tokyo 102-8554, Japan and Nano-technology Research Center, Sophia University, Tokyo 102-8554 (Japan); CREST, JST, Saitama 332-0012 (Japan); Funato, M.; Kawakami, Y. [CREST, JST, Saitama 332-0012 (Japan); Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)

2010-06-15T23:59:59.000Z

375

Affine and degenerate affine BMW algebras: Actions on tensor space  

E-Print Network [OSTI]

Affine and degenerate affine BMW algebras: Actions on tensor space Zajj Daugherty Department Actions of classical type tantalizers 8 2.1 The degenerate affine BMW algebra action . . . . . . . . . . . . . . . . . . . . . 13 2.2 The affine BMW algebra action . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3

Ram, Arun

376

Field dependent emission rates in radiation damaged GaAs  

SciTech Connect (OSTI)

We have measured the temperature and field dependence of emission rates from five traps in electron damaged GaAs. Four of the traps have previously been identified as radiation defects. One of the traps, seen in higher doped diodes, has not been previously identified. We have fit the data to a multiphonon emission theory that allows recombination in GaAs to be characterized over a broad range of temperature and electric field. These results demonstrate an efficient method to calculate field-dependent emission rates in GaAs.

Fleming, R. M.; Myers, S. M.; Wampler, W. R.; Lang, D. V.; Seager, C. H.; Campbell, J. M. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)

2014-07-07T23:59:59.000Z

377

Lawrence Berkeley Laboratory Affirmative Action Program. Revised  

SciTech Connect (OSTI)

The Lawrence Berkeley Laboratory`s Affirmative Action Program (AAP) serves as a working document that describes current policies, practices, and results in the area of affirmative action. It represents the Laboratory`s framework for an affirmative approach to increasing the representation of people of color and women in segments of our work force where they have been underrepresented and taking action to increase the employment of persons with disabilities and special disabled and Vietnam era veterans. The AAP describes the hierarchy of responsibility for Laboratory affirmative action, the mechanisms that exist for full Laboratory participation in the AAP, the policies and procedures governing recruitment at all levels, the Laboratory`s plan for monitoring, reporting, and evaluating affirmative action progress, and a description of special affirmative action programs and plans the Laboratory has used and will use in its efforts to increase the representation and retention of groups historically underrepresented in our work force.

NONE

1995-06-01T23:59:59.000Z

378

Effect of Sb on the Properties of GaInP Top Cells (Presentation)  

SciTech Connect (OSTI)

The summary of this report is that: (1) Sb can be used to increase V{sub oc} of a GaInP top cell; (2) the photovoltaic quality of GaInP is relatively unaffected by the presence of Sb; and (3) Sb-doped GaInP/GaAs tandem cells show promise for achieving efficiencies over 32%.

Olson, J. M.; McMahon, W. E.; Kurtz, S.

2006-05-01T23:59:59.000Z

379

A comparison of the RCRA Corrective Action and CERCLA Remedial Action Processes  

SciTech Connect (OSTI)

This document provides a comprehensive side-by-side comparison of the RCRA corrective action and the CERCLA remedial action processes. On the even-numbered pages a discussion of the RCRA corrective action process is presented and on the odd-numbered pages a comparative discussion of the CERCLA remedial action process can be found. Because the two programs have a difference structure, there is not always a direct correlation between the two throughout the document. This document serves as an informative reference for Departmental and contractor personnel responsible for oversight or implementation of RCRA corrective action and CERCLA remedial action activities at DOE environmental restoration sites.

Not Available

1994-02-01T23:59:59.000Z

380

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices  

SciTech Connect (OSTI)

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy); Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio [University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

2014-02-21T23:59:59.000Z

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs  

SciTech Connect (OSTI)

The waveguide effect of GaAsSb quantum wells in a semiconductor-laser structure based on GaAs is studied theoretically and experimentally. It is shown that quantum wells themselves can be used as waveguide layers in the laser structure. As the excitation-power density attains a value of 2 kW/cm{sup 2} at liquid-nitrogen temperature, superluminescence at the wavelength corresponding to the optical transition in bulk GaAs (at 835 nm) is observed.

Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Afonenko, A. A. [Belarussian State University (Belarus)] [Belarussian State University (Belarus); Dikareva, N. V. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation); Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Kudryavtsev, K. E.; Morozov, S. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Nekorkin, S. M. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)

2013-11-15T23:59:59.000Z

382

Electrical spin injection using GaCrN in a GaN based spin light emitting diode  

SciTech Connect (OSTI)

We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

Banerjee, D.; Ganguly, S.; Saha, D., E-mail: dipankarsaha@iitb.ac.in [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); IITB-Monash Research Academy, Indian Institute of Technology Bombay, Mumbai 400076 (India); Adari, R.; Sankaranarayan, S.; Kumar, A. [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India)] [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S. [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)] [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)

2013-12-09T23:59:59.000Z

383

Nuclear facility decommissioning and site remedial actions  

SciTech Connect (OSTI)

The 394 abstracted references on environmental restoration, nuclear facility decommissioning, uranium mill tailings management, and site remedial actions constitute the eleventh in a series of reports prepared annually for the US Department of Energy's Remedial Action Programs. Citations to foreign and domestic literature of all types -- technical reports, progress reports, journal articles, symposia proceedings, theses, books, patents, legislation, and research project descriptions -- have been included. The bibliography contains scientific, technical, economic, regulatory, and legal information pertinent to the US Department of Energy's Remedial Action Programs. Major sections are (1) Surplus Facilities Management Program, (2) Nuclear Facilities Decommissioning, (3) Formerly Utilized Sites Remedial Action Programs, (4) Facilities Contaminated with Naturally Occurring Radionuclides, (5) Uranium Mill Tailings Remedial Action Program, (6) Grand Junction Remedial Action Program, (7) Uranium Mill Tailings Management, (8) Technical Measurements Center, (9) Remedial Action Program, and (10) Environmental Restoration Program. Within these categories, references are arranged alphabetically by first author. Those references having no individual author are listed by corporate affiliation or by publication title. Indexes are provided for author, corporate affiliation, title word, publication description, geographic location, subject category, and keywords. This report is a product of the Remedial Action Program Information Center (RAPIC), which selects and analyzes information on remedial actions and relevant radioactive waste management technologies.

Knox, N.P.; Webb, J.R.; Ferguson, S.D.; Goins, L.F.; Owen, P.T.

1990-09-01T23:59:59.000Z

384

Beta-decay branching ratios of 62Ga  

E-Print Network [OSTI]

Beta-decay branching ratios of 62Ga have been measured at the IGISOL facility of the Accelerator Laboratory of the University of Jyvaskyla. 62Ga is one of the heavier Tz = 0, 0+ -> 0+ beta-emitting nuclides used to determine the vector coupling constant of the weak interaction and the Vud quark-mixing matrix element. For part of the experimental studies presented here, the JYFLTRAP facility has been employed to prepare isotopically pure beams of 62Ga. The branching ratio obtained, BR= 99.893(24)%, for the super-allowed branch is in agreement with previous measurements and allows to determine the ft value and the universal Ft value for the super-allowed beta decay of 62Ga.

A. Bey; B. Blank; G. Canchel; C. Dossat; J. Giovinazzo; I. Matea; V. Elomaa; T. Eronen; U. Hager; M. Hakala; A. Jokinen; A. Kankainen; I. Moore; H. Penttila; S. Rinta-Antila; A. Saastamoinen; T. Sonoda; J. Aysto; N. Adimi; G. De France; J. C. Thomas; G. Voltolini; T. Chaventré

2008-04-17T23:59:59.000Z

385

Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot  

SciTech Connect (OSTI)

In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

Emre Kavruk, Ahmet, E-mail: aekavruk@selcuk.edu.tr, E-mail: aekavruk@gmail.com; Koc, Fatih [Physics Department, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Sahin, Mehmet, E-mail: mehmet.sahin@agu.edu.tr, E-mail: mehsahin@gmail.com [Physics Department, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Department of Material Sciences and Nanotechnology Engineering, Abdullah Gul University, Kayseri (Turkey)

2013-11-14T23:59:59.000Z

386

Transverse acoustic actuation of Ni-Mn-Ga single crystals  

E-Print Network [OSTI]

Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

Simon, Jesse Matthew

2007-01-01T23:59:59.000Z

387

Lattice vibrations of pure and doped GaSe  

SciTech Connect (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

388

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents [OSTI]

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

389

EIS-0030-S: Bonneville Power Administration Proposed FY 1980 Program, Facility Location Supplement, Northwest Montana/North Idaho Support and Libby Integration, Supplemental  

Broader source: Energy.gov [DOE]

The Bonneville Power Administration developed this supplemental statement to evaluate the environmental impacts of proposed alternative actions to alternative actions intended to address the need for reliability of electrical service to loads in Northwest Montana and North Idaho and the need for integrating the generation being added at Libby Dam into the Federal Columbia River Power System.

390

CORRECTIVE ACTION PLAN FOR CORRECTIVE ACTION UNIT 300: SURFACE RELEASE AREAS NEVADA TEST SITE, NEVADA  

SciTech Connect (OSTI)

The purpose of this Corrective Action Plan (CAP) is to provide the detailed scope of work required to implement the recommended corrective actions as specified in the approved CAU 300 CADD.

NONE

2006-07-01T23:59:59.000Z

391

Environmental Activism as Collective Action Key words: Environmental activism, environmental behavior, collective action,  

E-Print Network [OSTI]

Environmental Activism as Collective Action Key words: Environmental activism, environmental behavior, collective action, environmentalism, collective interest model. Mark Lubell Department The literature on environmental activism has failed to produce a model of individual decision- making explicitly

Lubell, Mark

392

Robotic actions in the human brain Robotic movement preferentially engages the action observation network  

E-Print Network [OSTI]

Robotic actions in the human brain 1 Robotic movement., Stadler, W. & Prinz, W. (in press / 2011). Robotic movement preferentially engages the action observation network. Human Brain Mapping. #12;Robotic

Hamilton, Antonia

393

Removal Action Plan for the Accelerated Retrieval Project for a Described Area within Pit 4  

SciTech Connect (OSTI)

This Removal Action Plan documents the plan for implementation of the Comprehensive Environmental Response, Compenstion, and Liability Act non-time-critical removal action to be performed by the Accelerated Retrieval Project. The focus of the action is the limited excavation and retrieval of selected waste streams from a designated portion of the Radioactive Waste Management Complex Subsurface Disposal Area that are contaminated with volatile organic compounds, isotopes of uranium, or transuranic radionuclides. The selected retrieval area is approximately 0.2 ha (1/2 acre) and is located in the eastern portion of Pit 4. The proposed project is referred to as the Accelerated Retrieval Project. This Removal Action Plan details the major work elements, operations approach, and schedule, and summarizes the environmental, safety and health, and waste management considerations associated with the project.

A. M. Tyson

2006-08-01T23:59:59.000Z

394

Anti-phase domains in cubic GaN  

SciTech Connect (OSTI)

The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {l_brace}111{r_brace} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, {mu}-Raman and cathodoluminescence spectroscopy.

Maria Kemper, Ricarda; Schupp, Thorsten; Haeberlen, Maik; Lindner, Joerg; Josef As, Donat [University of Paderborn, Department of Physics, Warburger Str. 100, D-33098 Paderborn (Germany); Niendorf, Thomas; Maier, Hans-Juergen [University of Paderborn, Lehrstuhl fuer Werkstoffkunde, Pohlweg 47-49, D-33098 Paderborn (Germany); Dempewolf, Anja; Bertram, Frank; Christen, Juergen [University of Magdeburg, Institut fuer Festkoerperphysik, P.O. Box 4120, D-39016 Magdeburg (Germany); Kirste, Ronny; Hoffmann, Axel [Technische Universitaet Berlin, Institute of Solid State Physics, Hardenbergstr. 36, D-10623 Berlin (Germany)

2011-12-15T23:59:59.000Z

395

Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching  

E-Print Network [OSTI]

The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into ...

Chen, A.

396

Safety-related operator actions: methodology for developing criteria  

SciTech Connect (OSTI)

This report presents a methodology for developing criteria for design evaluation of safety-related actions by nuclear power plant reactor operators, and identifies a supporting data base. It is the eleventh and final NUREG/CR Report on the Safety-Related Operator Actions Program, conducted by Oak Ridge National Laboratory for the US Nuclear Regulatory Commission. The operator performance data were developed from training simulator experiments involving operator responses to simulated scenarios of plant disturbances; from field data on events with similar scenarios; and from task analytic data. A conceptual model to integrate the data was developed and a computer simulation of the model was run, using the SAINT modeling language. Proposed is a quantitative predictive model of operator performance, the Operator Personnel Performance Simulation (OPPS) Model, driven by task requirements, information presentation, and system dynamics. The model output, a probability distribution of predicted time to correctly complete safety-related operator actions, provides data for objective evaluation of quantitative design criteria.

Kozinsky, E.J.; Gray, L.H.; Beare, A.N.; Barks, D.B.; Gomer, F.E.

1984-03-01T23:59:59.000Z

397

Epitaxial growth of Cu,,In,Ga...Se2 on GaAs,,110... and A. Rockett  

E-Print Network [OSTI]

. INTRODUCTION The Cu(In, Ga)Se2 CIGS absorber layer in a recent record-efficiency CIGS solar cell1 has a 220.13 Commercially supplied ``epi-ready'' liquid- encapsulated Czo

Rockett, Angus

398

Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods  

E-Print Network [OSTI]

Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency droop induced by density-activated defect recombination in nanorod structure of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that the improvement is a combined effect of the amendment contributed by lateral carrier confinement and the deterioration made by surface trapping.

Shi, Chentian; Yang, Fan; Park, Min Joo; Kwak, Joon Seop; Jung, Sukkoo; Choi, Yoon-Ho; Wang, Xiaoyong; Xiao, Min

2013-01-01T23:59:59.000Z

399

Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces  

SciTech Connect (OSTI)

We report on green (550–560?nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (?500?A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (?550?nm at room temperature). At high current densities (>1?kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4?kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14?kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

Ledentsov, N. N., E-mail: nikolay.ledentsov@v-i-systems.com; Shchukin, V. A. [VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623 (Germany); Lyytikäinen, J.; Okhotnikov, O. [Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720 (Finland); Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V. [A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation); Schlichting, S.; Nippert, F.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623 (Germany)

2014-11-03T23:59:59.000Z

400

Sensory invariance driven action (SIDA) framework for understanding the meaning of neural spikes  

E-Print Network [OSTI]

on an approach which regards action as necessary for acquiring the meaning of neural spikes. This approach differs from some others in that it proposes a new criterion called the sensory invariance criterion, which can be used to associate meaning to spike...

Bhamidipati, Sarvani Kumar

2004-09-30T23:59:59.000Z

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk  

SciTech Connect (OSTI)

Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280?nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

2014-11-07T23:59:59.000Z

402

The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa  

SciTech Connect (OSTI)

We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

Özduran, Mustafa [Ahi Evran Üniversitesi Fen Edebiyat Fakültesi Fizik Bölümü, K?r?ehir (Turkey); Turgut, Kemal [Yüksek Lisans Ö?rencisi, K?r?ehir (Turkey); Arikan, Nihat [Ahi Evran Üniversitesi E?itim Fakültesi ?lkö?retim Bölümü, K?r?ehir (Turkey); ?yigör, Ahmet; Candan, Abdullah [Ahi Evran Üniversitesi Merkezi Ara?t?rma Laboratuvar?, K?r?ehir (Turkey)

2014-10-06T23:59:59.000Z

403

Reduced lattice temperature high-speed operation of pseudomorphic InGaAdGaAs field-effect transistors  

E-Print Network [OSTI]

,um GaAs buffer, 170 A Ino.zGao,sAs strained channel, 50 A undoped Ale,,,Ga,,,As undoped spacer, S dimensions of 0.25 x 200 pm and 0.5 X 200 pm with a source-drain spacing of 2 ,um. The MODFETs have gate dimensions of 0.35~ 100 pm and 0.47X 100 pm with a source-drain spacing of 1 ,um. The MISFETs have

Kolodzey, James

404

CLIMATE ACTION PLAN NOVEMBER 10, 2009  

E-Print Network [OSTI]

CLIMATE ACTION PLAN NOVEMBER 10, 2009 SANDY DEJOHN PHYSICAL FACILITIES DEPARTMENT #12;~ i ~ TABLE the American College and University Presidents Climate Commitment, I believe strongly in working to achieve its helped shape and develop the information contained in this Climate Action Plan: (Names listed

Suzuki, Masatsugu

405

Practical evaluation of action-angle variables  

SciTech Connect (OSTI)

A practical method is described for establishing action-angle variables for a Hamiltonian system. That is, a given nearly integrable Hamiltonian is divided into an exactly integrable system plus a perturbation in action-angle form. The transformation of variables, which is carried out using a few short trajectory integrations, permits a rapid determination of trajectory properties throughout a phase space volume.

Boozer, A.H.

1984-02-01T23:59:59.000Z

406

Action Requested: THE UNIVERSITY OF MICHIGAN  

E-Print Network [OSTI]

Subject: Action Requested: THE UNIVERSITY OF MICHIGAN REGENTS COMMUNICATION ACTION REQUEST schools and Michigan middle or junior high schools and matriculation at the University within 28 months President for Academic Affairs July 2013 Attachment #12;UNIVERSITY OF MICHIGAN GUIDELINES FOR QUALIFYING

Kamat, Vineet R.

407

Nordic H2 Energy Foresight Action Report  

E-Print Network [OSTI]

Nordic H2 Energy Foresight Action Report Annele Eerola Nordic Hydrogen Energy Foresight www.h2.): The Action Report is one of the intermediate outputs of the Nordic H2 Energy Foresight project. It pools. The report discusses these generic and specific challenges concerning the entire hydrogen energy value chain

408

Patent Issued Additional Office Actions Received  

E-Print Network [OSTI]

Patent Issued Additional Office Actions Received 3-12 mo. Respond to Office Action Patent attorney The patent examiner provides notification of which claims in the application have been rejected or accepted determines there are multiple inventions in 1 application. Patent Application Published 6 mo. Non

Cui, Yan

409

University of Kentucky Affirmative Action Plan  

E-Print Network [OSTI]

University of Kentucky Affirmative Action Plan Office of Institutional Equity and Equal Opportunity University of Kentucky Room 13 Main Building Administration Drive Lexington, Kentucky 40506-0032 (859) 257 as a revision of the University of Kentucky Affirmative Action Plan first issued in 1968. It supercedes all

Hayes, Jane E.

410

World Volume Action for Fractional Branes  

E-Print Network [OSTI]

We study the world volume action of fractional Dp-branes of type IIA string theory compactified on the orbifold T^4/Z_2. The geometric relation between these branes and wrapped branes is investigated using conformal techniques. In particular we examine in detail various scattering amplitudes and find that the leading low-energy interactions are consistent with the boundary action derived geometrically.

Merlatti, P

2001-01-01T23:59:59.000Z

411

World Volume Action for Fractional Branes  

E-Print Network [OSTI]

We study the world volume action of fractional Dp-branes of type IIA string theory compactified on the orbifold T^4/Z_2. The geometric relation between these branes and wrapped branes is investigated using conformal techniques. In particular we examine in detail various scattering amplitudes and find that the leading low-energy interactions are consistent with the boundary action derived geometrically.

P. Merlatti; G. Sabella

2001-01-11T23:59:59.000Z

412

Corrective Action Decision Document/Closure Report for Corrective Action Unit 551: Area 12 Muckpiles, Nevada Test Site, Nevada, Rev. No.: 1  

SciTech Connect (OSTI)

This Corrective Action Decision Document (CADD)/Closure Report (CR) presents information supporting closure of Corrective Action Unit (CAU) 551, Area 12 Muckpiles, Nevada Test Site (NTS), Nevada. The corrective actions proposed in this document are in accordance with the Federal Facility Agreement and Consent Order (FFACO) that was agreed to by the State of Nevada, U.S. Department of Energy (DOE), and the U.S. Department of Defense (FFACO, 1996). The NTS is approximately 65 miles (mi) northwest of Las Vegas, Nevada (Figure 1-1). Corrective Action Unit 551 is comprised of the four Corrective Action Sites (CASs) that are shown on Figure 1-2 and listed below: CAS 12-01-09, Aboveground Storage Tank and Stain; CAS 12-06-05, U-12b Muckpile; CAS 12-06-07, Muckpile; and CAS 12-06-08, Muckpile. A detailed discussion of the history of this CAU is presented in the ''Corrective Action Investigation Plan (CAIP) for Corrective Action Unit 551: Area 12 Muckpiles'' (NNSA/NSO, 2004). This CADD/CR provides justification for the closure of CAU 551 in place with administrative controls. This justification is based upon process knowledge and the results of the investigative activities conducted in accordance with the CAIP (NNSA/NSO, 2004). The CAIP provides information relating to the history, planning, and scope of the investigation; therefore, this information will not be repeated in the CADD/CR. Corrective Action Unit 551, Area 12 Muckpiles, consists of four inactive sites located in the southwestern portion of Area 12. The four CAU 551 sites consist of three muckpiles, and an aboveground storage tank (AST) and stain. The CAU 551 sites were all used during underground nuclear testing at the B-, C-, D- and F-Tunnels in the late 1950s and early 1960s and have mostly remained inactive since that period.

Wickline, Alfred

2006-11-01T23:59:59.000Z

413

Safety assessment for proposed pump mixing operations to mitigate episodic gas releases in tank 241-101-SY: Hanford Site, Richland, Washington  

SciTech Connect (OSTI)

This safety assessment addresses each of the elements required for the proposed action to remove a slurry distributor and to install, operate, and remove a mixing pump in Tank 241-SY-101, which is located within the Hanford Site, Richland, Washington. The proposed action is required as part of an ongoing evaluation of various mitigation concepts developed to eliminate episodic gas releases that result in hydrogen concentrations in the tank dome space that exceed the lower flammability limit.

Lentsch, J.W., Westinghouse Hanford

1996-05-16T23:59:59.000Z

414

A safety assessment for proposed pump mixing operations to mitigate episodic gas releases in tank 241-SY-101: Hanford Site,Richland, Washington  

SciTech Connect (OSTI)

This safety assessment addresses each of the elements required for the proposed action to remove a slurry distributor and to install, operate, and remove a mixing pump in Tank 241-SY-101,which is located within the Hanford Site, Richland, Washington.The proposed action is required as part of an ongoing evaluation of various mitigation concepts developed to eliminate episodic gas releases that result in hydrogen concentrations in the tank dome space that exceed the lower flammability limit.

Lentsch, J.W.

1996-07-01T23:59:59.000Z

415

Environmental assessment -- Proposed neutrino beams at the Main Injector project  

SciTech Connect (OSTI)

The US Department of Energy (DOE) proposes to build a beamline on the Fermi National Accelerator Laboratory (Fermilab) site to accommodate an experimental research program in neutrino physics. The proposed action, called Neutrino Beams at the Main Injector (NuMI), is to design, construct, operate and decommission a facility for producing and studying a high flux beam of neutrinos in the energy range of 1 to 40 GeV (1 GeV is one billion or 10{sup 9} electron volts). The proposed facility would initially be dedicated to two experiments, COSMOS (Cosmologically Significant Mass Oscillations) and MINOS (Main Injector Neutrino Oscillation Search). The neutrino beam would pass underground from Fermilab to northern Minnesota. A tunnel would not be built in this intervening region because the neutrinos easily pass through the earth, not interacting, similar to the way that light passes through a pane of glass. The beam is pointed towards the MINOS detector in the Soudan Underground Laboratory in Minnesota. Thus, the proposed project also includes construction, operation and decommissioning of the facility located in the Soudan Underground Laboratory in Minnesota that houses this MINOS detector. This environmental assessment (EA) has been prepared by the US Department of Energy (DOE) in accordance with the DOE`s National Environmental Policy Act (NEPA) Implementing Procedures (10 CFR 1021). This EA documents DOE`s evaluation of potential environmental impacts associated with the proposed construction and operation of NuMI at Fermilab and its far detector facility located in the Soudan Underground Laboratory in Minnesota. Any future use of the facilities on the Fermilab site would require the administrative approval of the Director of Fermilab and would undergo a separate NEPA review. Fermilab is a Federal high-energy physics research laboratory in Batavia, Illinois operated on behalf of the DOE by Universities Research Association, Inc.

NONE

1997-12-01T23:59:59.000Z

416

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network [OSTI]

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

417

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts  

SciTech Connect (OSTI)

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

2003-07-10T23:59:59.000Z

418

The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers  

E-Print Network [OSTI]

have been operated in GaAs/AlGaAs and InP/InGaAsP mul- tiple quantum well MQW materials showed no evidence of mode-locked operation. Band-edge absorption spectra are also presented which

419

Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells  

SciTech Connect (OSTI)

We have studied the carrier recombination dynamics in an InGaN/GaN multiple quantum well structure as a function of emission energy and excitation density between temperatures of 10?K and 100?K. Under relatively low levels of excitation, the photoluminescence (PL) intensity and decay time of emission on the high energy side of the luminescence spectrum decrease strongly between 10?K and 50?K. In contrast, for emission detected on the low energy side of the spectrum, the PL intensity and decay time increase over the same temperature range. These results are consistent with a thermally activated carrier redistribution process in which the (temperature dependent) average timescale for carrier transfer into or out of a localised state depends on the energy of the given state. Thus, the transfer time out of shallow, weakly localised states is considerably shorter than the arrival time into more deeply localised states. This picture is consistent with carriers hopping between localisation sites in an uncorrelated disorder potential where the density of localised states decreases with increasing localisation depth, e.g., a exponential or Gaussian distribution resulting from random alloy disorder. Under significantly higher levels of excitation, the increased occupation fraction of the localised states results in a greater average separation distance between unoccupied localised states, causing a suppression of the spectral and dynamic signatures of the hopping transfer of carriers.

Badcock, T. J., E-mail: Thomas.badcock@crl.toshiba.co.uk; Dawson, P.; Davies, M. J. [School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kappers, M. J.; Massabuau, F. C.-P.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

2014-03-21T23:59:59.000Z

420

Testing of ethylene propylene seals for the GA-4/GA-9 casks  

SciTech Connect (OSTI)

The primary O-ring seal of the GA-4 and GA-9 casks was tested for leakage with a full-scale mockup of the cask lid and flange. Tests were performed at temperatures of ambient, {minus}41{degrees}, 121{degrees}, and 193{degrees}C. Shim plates between the lid and flange simulated gaps caused by thermal distortion. The testing used a helium mass spectrometer leak detector (MSLD). Results showed that the primary seal was leaktight for all test conditions. Helium permeation through the seal began in 13--23 minutes for the ambient tests and in 1--2 minutes for the tests at elevated temperatures. After each test several hours of the pumping were typically required to reduce the MSLD background reading to an acceptable level for the next test, indicating that the seal had become saturated with helium. To verify that the test results showed permeation and not real leakage, several response checks were conducted in which a calibrated leak source was inserted in the detector line near the seal. When the leak source was activated the detector responded within seconds.

Boonstra, R.H.

1993-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment  

SciTech Connect (OSTI)

The influence of alloy clustering on fluctuations in the ground state energy of the two-dimensional electron gas (2DEG) in AlGaN/GaN and InAlN/GaN heterostructures is studied. We show that because of these fluctuations, alloy clustering degrades the mobility even when the 2DEG wavefunction does not penetrate the alloy barrier unlike alloy disorder scattering. A comparison between the results obtained for AlGaN/GaN and InAlN/GaN heterostructures shows that alloy clustering limits the 2DEG mobility to a greater degree in InAlN/GaN heterostructures. Our study also reveals that the inclusion of an AlN interlayer increases the limiting mobility from alloy clustering. Moreover, Atom probe tomography is used to demonstrate the random nature of the fluctuations in the alloy composition.

Ahmadi, Elaheh; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States); Chalabi, Hamidreza [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Kaun, Stephen W.; Shivaraman, Ravi; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2014-10-07T23:59:59.000Z

422

Call for Research Proposals January 13, 2011  

E-Print Network [OSTI]

should contact Prof. Jon Chase, Director (jchase@wustl.edu). For proposals focused on the Clean Coal

Subramanian, Venkat

423

Proposal Submittal and Scheduling Procedures for Macromolecular...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Proposal Submittal and Scheduling Procedures for Macromolecular Crystallography Beam time for macromolecular crystallography projects is obtained by submitting an SSRL...

424

Corrective Action Investigation Plan for Corrective Action Unit 230: Area 22 Sewage Lagoons and Corrective Action Unit 320: Area 22 Desert Rock Air port Strainer Box, Nevada Test Site, Nevada  

SciTech Connect (OSTI)

This Corrective Action Investigation Plan contains the US Department of Energy, Nevada Operation Office's approach to collect the data necessary to evaluate corrective action alternatives appropriate for the closure of Corrective Action Unit (CAU) 230/320 under the Federal Facility Agreement and Consent Order. Corrective Action Unit 230 consists of Corrective Action Site (CAS) 22-03-01, Sewage Lagoon; while CAU 320 consists of CAS 22-99-01, Strainer Box. These CAUs are referred to as CAU 230/320 or the Sewage Lagoons Site. The Sewage Lagoons Site also includes an Imhoff tank, sludge bed, and associated buried sewer piping. Located in Area 22, the site was used between 1951 to 1958 for disposal of sanitary sewage effluent from the historic Camp Desert Rock Facility at the Nevada Test Site in Nevada. Based on site history, the contaminants of potential concern include volatile organic compounds (VOCs), semivolatile organic compounds, total petroleum hydrocarbons (TPH), and radionuclides. Vertical migration is estimated to be less than 12 feet below ground surface, and lateral migration is limited to the soil immediately adjacent to or within areas of concern. The proposed investigation will involve a combination of field screening for VOCs and TPH using the direct-push method and excavation using a backhoe to gather soil samples for analysis. Gamma spectroscopy will also be conducted for waste management purposes. Sampling locations will be biased to suspected worst-case areas including the nearby sludge bed, sewage lagoon inlet(s) and outlet(s), disturbed soil surrounding the lagoons, surface drainage channel south of the lagoons, and the area near the Imhoff tank. The results of this field investigation will support a defensible evaluation of corrective action alternatives in the corrective action decision document.

U.S. Department of Energy, Nevada Operations Office

1999-06-10T23:59:59.000Z

425

Corrective Action Investigation Plan for Corrective Action Unit 230: Area 22 Sewage Lagoons and Corrective Action Unit 320: Area 22 Desert Rock Airport Strainer Box, Nevada Test Site, Nevada  

SciTech Connect (OSTI)

This Corrective Action Investigation Plan contains the U.S. Department of Energy, Nevada Operation Office's approach to collect the data necessary to evaluate corrective action alternatives appropriate for the closure of Corrective Action Unit (CAU) 230/320 under the Federal Facility Agreement and Consent Order. Corrective Action Unit 230 consists of Corrective Action Site (CAS) 22-03-01, Sewage Lagoon; while CAU 320 consists of CAS 22-99-01, Strainer Box. These CAUs are referred to as CAU 230/320 or the Sewage Lagoons Site. The Sewage Lagoons Site also includes an Imhoff tank, sludge bed, and associated buried sewer piping. Located in Area 22, the site was used between 1951 to 1958 for disposal of sanitary sewage effluent from the historic Camp Desert Rock Facility at the Nevada Test Site in Nevada. Based on site history, the contaminants of potential concern include volatile organic compounds (VOCs), semivolatile organic compounds, total petroleum hydrocarbons (TPH), and radionuclides. Vertical migration is estimated to be less than 12 feet below ground surface, and lateral migration is limited to the soil immediately adjacent to or within areas of concern. The proposed investigation will involve a combination of field screening for VOCs and TPH using the direct-push method and excavation using a backhoe to gather soil samples for analysis. Gamma spectroscopy will also be conducted for waste management purposes. Sampling locations will be biased to suspected worst-case areas including the nearby sludge bed, sewage lagoon inlet(s) and outlet(s), disturbed soil surrounding the lagoons, surface drainage channel south of the lagoons, and the area near the Imhoff tank. The results of this field investigation will support a defensible evaluation of corrective action alternatives in the corrective action decision document.

US DOE/Nevada Operations Office

1999-06-10T23:59:59.000Z

426

Oil and gas: Oilfield class actions  

SciTech Connect (OSTI)

The use of class actions is getting alot of attention in the oilfield. Plaintiffs have filed class actions challenging two of the most rooted industry practices, oil posted prices and deregulated natural gas affiliate deduction and charges. The classes will include tens or hundreds of thousands of plaintiffs and may transform two of the industry`s most settled practices. The emotions surrounding the class action risk obscuring the fact that it is an old and oft-used tool in oilfield litigation. The class action {open_quotes}provides a means by which, where a large group of persons are interested in a matter, one or more may sue or be sued as representatives of the class without needing to join every member of the class.{close_quotes} The procedure avoids waste by combining scattered disputes, even if some injured might sue individually, and it enables plaintiffs who could not afford to sue to be represented anyway. The lawyers draw their fees from any recovery. Almost all oilpatch class actions are brought to resolve a {open_quotes}common question{close_quotes} under Federal Rules of Civil Procedure 23(b)(3) or state counterparts. The rule`s {open_quotes}opt-out{close_quotes} provisions give class actions a tremendous boost because members stay in unless they take steps to get out. This article discusses present and future class actions.

McArthur, J.B.

1997-06-01T23:59:59.000Z

427

Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires  

SciTech Connect (OSTI)

We have investigated the magnetoresistance (MR) in a series of Zn doped (p-type) GaAs nanowires implanted with different Mn concentrations. The nanowires with the lowest Mn concentration (?0.0001%) exhibit a low resistance of a few k? at 300?K and a 4% positive MR at 1.6?K, which can be well described by invoking a spin-split subband model. In contrast, nanowires with the highest Mn concentration (4%) display a large resistance of several M? at 300?K and a large negative MR of 85% at 1.6?K. The large negative MR is interpreted in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons, separated by intermediate regions of Mn impurity spins. Sweeping the magnetic field back and forth for the 4% sample reveals a hysteresis that indicates the presence of a weak ferromagnetic phase. We propose co-doping with Zn to be a promising way to reach the goal of realizing ferromagnetic Ga{sub 1?x}Mn{sub x}As nanowires for future nanospintronics.

Paschoal, W.; Kumar, Sandeep; Jain, V.; Pettersson, H., E-mail: hakan.pettersson@hh.se [Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund (Sweden); Department of Mathematics, Physics and Electrical Engineering, Halmstad University, Box 823, SE-301 18, Halmstad (Sweden); Jacobsson, D.; Samuelson, L. [Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund (Sweden); Johannes, A.; Ronning, C. [Institute for Solid State Physics, Friedrich-Schiller-University Jena, Max-Wien-Platz 1, D-07743 Jena (Germany); Canali, C. M.; Pertsova, A. [Department of Physics and Electrical Engineering, Linneaus University, SE-39233 Kalmar (Sweden); Dick, K. A. [Solid State Physics/The Nanometer Structure Consortium, Lund University, Box 118, SE-221 00 Lund (Sweden); Center for Analysis and Synthesis, Lund University, Box 124, S-221 00 Lund (Sweden)

2014-04-14T23:59:59.000Z

428

Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence  

SciTech Connect (OSTI)

Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

Schmidt, Gordon, E-mail: Gordon.Schmidt@ovgu.de; Müller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jürgen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, 39106 Magdeburg (Germany); Glauser, Marlene; Carlin, Jean-François; Cosendey, Gatien; Butté, Raphaël; Grandjean, Nicolas [Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

2014-07-21T23:59:59.000Z

429

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network [OSTI]

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

430

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes  

SciTech Connect (OSTI)

The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

2010-01-15T23:59:59.000Z

431

Piezoelectric surface acoustical phonon amplification in graphene on a GaAs substrate  

SciTech Connect (OSTI)

We study the interaction of Dirac Fermions in monolayer graphene on a GaAs substrate in an applied electric field by the combined action of the extrinsic potential of piezoelectric surface acoustical phonons of GaAs (piezoelectric acoustical (PA)) and of the intrinsic deformation potential of acoustical phonons in graphene (deformation acoustical (DA)). We find that provided the dc field exceeds a threshold value, emission of piezoelectric (PA) and deformation (DA) acoustical phonons can be obtained in a wide frequency range up to terahertz at low and high temperatures. We found that the phonon amplification rate R{sup PA,DA} scales with T{sub BG}{sup S?1} (S=PA,DA), T{sub BG}{sup S} being the Block?Gru{sup ¨}neisen temperature. In the high-T Block?Gru{sup ¨}neisen regime, extrinsic PA phonon scattering is suppressed by intrinsic DA phonon scattering, where the ratio R{sup PA}/R{sup DA} scales with ?1/?(n), n being the carrier concentration. We found that only for carrier concentration n?10{sup 10}cm{sup ?2}, R{sup PA}/R{sup DA}>1. In the low-T Block?Gru{sup ¨}neisen regime, and for n=10{sup 10}cm{sup ?2}, the ratio R{sup PA}/R{sup DA} scales with T{sub BG}{sup DA}/T{sub BG}{sup PA}?7.5 and R{sup PA}/R{sup DA}>1. In this regime, PA phonon dominates the electron scattering and R{sup PA}/R{sup DA}<1 otherwise. This study is relevant to the exploration of the acoustic properties of graphene and to the application of graphene as an acoustical phonon amplifier and a frequency-tunable acoustical phonon device.

Nunes, O. A. C., E-mail: oacn@unb.br [Institute of Physics, University of Brasilia, Brasilia, 70910-900 DF (Brazil)

2014-06-21T23:59:59.000Z

432

Maskless lateral epitaxial overgrowth of GaN on sapphire  

SciTech Connect (OSTI)

The authors demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed maskless LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 {micro}m) GaN layer on sapphire is selectively dry etched, leaving {approximately} 5 {micro}m-wide stripe mesas oriented in the <10{bar 1}0>{sub GaN} direction, with a 20 {micro}m period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a T, or overhang, morphology. As for LEO over an SiO{sub 2} mask, significant defect reduction (from {approximately} 10{sup 9} cm{sup {minus}2} to {approximately} 10{sup 6} cm{sup {minus}2}) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle ({approximately} 0.4--0.5{degree}) is relatively independent of growth temperature and wing aspect ratio.

Fini, P.; Marchand, H.; Ibbetson, J.P.; Moran, B.; Zhao, L.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.

1999-07-01T23:59:59.000Z

433

Pulsed laser annealing of Be-implanted GaN  

SciTech Connect (OSTI)

Postimplantation thermal processing of Be in molecular-beam-epitaxy-grown GaN by rapid thermal annealing (RTA) and pulsed laser annealing (PLA) was investigated. It has been found that the activation of Be dopants and the repair of implantation-induced defects in GaN films cannot be achieved efficiently by conventional RTA alone. On the other hand, good dopant activation and surface morphology and quality were obtained when the Be-implanted GaN film was annealed by PLA with a 248 nm KrF excimer laser. However, observations of off-resonant micro-Raman and high-resolution x-ray-diffraction spectra indicated that crystal defects and strain resulting from Be implantation were still existent after PLA, which probably degraded the carrier mobility and limited the activation efficiency to some extent. This can be attributed to the shallow penetration depth of the 248 nm laser in GaN, which only repaired the crystal defects in a thin near-surface layer, while the deeper defects were not annealed out well. This situation was significantly improved when the Be-implanted GaN was subjected to a combined process of PLA followed by RTA, which produced good activation of the dopants, good surface morphology, and repaired bulk and surface defects well.

Wang, H.T.; Tan, L.S.; Chor, E.F. [Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

2005-11-01T23:59:59.000Z

434

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors  

SciTech Connect (OSTI)

It is commonly accepted that interface states at the passivation surface of AlGaN/GaN heterostructures play an important role in the formation of the 2DEG density. Several interface state models are cited throughout literature, some with discrete levels, others with different kinds of distributions, or a combination of both. The purpose of this article is to compare the existing interface state models with both direct and indirect measurements of these interface states from literature (e.g., through the hysteresis of transfer characteristics of Metal-Insulator-Semiconductor High Electron Mobility Transistors (MISHEMTs) employing such an interface in the gate region) and Technology Computer Aided Design (TCAD) simulations of 2DEG densities as a function of the AlGaN thickness. The discrepancies between those measurements and TCAD simulations (also those commonly found in literature) are discussed. Then, an alternative model inspired by the Disorder Induced Gap State model for compound semiconductors is proposed. It is shown that defining a deep border trap inside the insulator can solve these discrepancies and that this alternative model can explain the origin of the two dimensional electron gas in combination with a high-quality interface that, by definition, has a low interface state density.

Bakeroot, B., E-mail: Benoit.Bakeroot@elis.ugent.be [Centre for Microsystems Technology (CMST), imec and Ghent University, Technologiepark 914a, 9052 Gent (Belgium); You, S.; Van Hove, M.; De Jaeger, B.; Geens, K.; Stoffels, S.; Decoutere, S. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Wu, T.-L.; Hu, J. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, 3001 Leuven (Belgium)

2014-10-07T23:59:59.000Z

435

M-area hazardous waste management facility groundwater monitoring and corrective-action report, First quarter 1995, Volume 1  

SciTech Connect (OSTI)

This report, in three volumes, describes the ground water monitoring and c corrective-action program at the M-Area Hazardous Waste Management Facility (HWMF) at the Savannah River Site (SRS) during the fourth quarter 1994 and first quarter 1995. Concise description of the program and considerable data documenting the monitoring and remedial activities are included in the document. This is Volume 1 covering the following topics: sampling and results; hydrogeologic assessment; water quality assessment; effectiveness of the corrective-action program; corrective-action system operation and performance; monitoring and corrective-action program assessment; proposed monitoring and corrective-action program modifications. Also included are the following appendicies: A-standards; B-flagging criteria; C-figures; D-monitoring results tables; E-data quality/usability assessment.

NONE

1995-05-01T23:59:59.000Z

436

Remedial Action Plan and site design for stabilization of the inactive uranium mill tailings site at Rifle, Colorado  

SciTech Connect (OSTI)

This document has been structured to provide a comprehensive understanding of the remedial action proposed for the Rifle sites. That remedial action consists of removing approximately 4,185,000 cubic yards (cy) of tailings and contaminated materials from their current locations, transporting, and stabilizing the tailings material at the Estes Gulch disposal site, approximately six miles north of Rifle. The tailings and contaminated materials are comprised of approximately 597,000 cy from Old Rifle, 3,232,000 cy from New Rifle, and 322,000 cy from vicinity properties and about 34,000 cy from demolition. The remedial action plan includes specific design requirements for the detailed design and construction of the remedial action. An extensive amount of data and supporting information have been generated for this remedial action and cannot all be incorporated into this document. Pertinent information and data are included with reference given to the supporting documents.

Not Available

1990-02-01T23:59:59.000Z

437

Composition and Interface Analysis of InGaN/GaN Multiquantum-Wells on GaN  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed New SubstationCleanCommunity Involvement andMISR, and4ComplianceCW 2013 Oct 25

438

Bishop's University Energy Efficiency Action Plan  

E-Print Network [OSTI]

. Continuous basis Action 9: Sustainable Development standards for existing buildings. Go green certification from BOMA for existing buildings Bishop's University Sustainable Development policy (ELU Committee January 2008 Government of Quebec, energy strategy, May 2006 Sustainable Development law, 2006 Letter

439

Climate Action Plan (Nova Scotia, Canada)  

Broader source: Energy.gov [DOE]

Nova Scotia's Climate Change Action Plan has two main goals: reducing the province's contribution to climate change by reducing greenhouse gas (GHG) emissions and preparing for changes to the...

440

Climate Action Plan (New Brunswick, Canada)  

Broader source: Energy.gov [DOE]

New Brunswick-led initiatives will result in greenhouse gas emission reductions of 5.5 megatonnes (millions of tonnes, Mt) annually in 2012. The plan includes actions in the following areas:...

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

ACTION SPECTRUM OF THE "SECOND EMERSON EFFECT"  

E-Print Network [OSTI]

at 670 mju in the action spectrum of the "second Emerson effect"' (22, 33), in the green alga Chlorella the fraction of total absorbed light absorbed by the accessory pigments (be it chlorophyll b in Chlorella

Govindjee

442

Philadelphia, Pennsylvania: Solar in Action (Brochure), Solar...  

Broader source: Energy.gov (indexed) [DOE]

October 2011 Solar in Action Philadelphia was designated by the U.S. Department of Energy (DOE) on March 28, 2008, as Solar America City. At that time, the city presented a...

443

Page 1 of 7 Call for Proposals  

E-Print Network [OSTI]

, the Alexander von Humboldt Foundation, the German Academic Exchange Service and the Fraunhofer) as part of the initiative 'Promote Innovation and Research in Germany'. #12;Page 2 of 7 German Research, specific characteristics of target country) · Originality and innovativeness of the actions (How do

Lübeck, Universität zu

444

GaAs-based high temperature electrically pumped polariton laser  

SciTech Connect (OSTI)

Strong coupling effects and polariton lasing are observed at 155?K with an edge-emitting GaAs-based microcavity diode with a single Al{sub 0.31}Ga{sub 0.69}As/Al{sub 0.41}Ga{sub 0.59}As quantum well as the emitter. The threshold for polariton lasing is observed at 90?A/cm{sup 2}, accompanied by a reduction of the emission linewidth to 0.85?meV and a blueshift of the emission wavelength by 0.89?meV. Polariton lasing is confirmed by the observation of a polariton population redistribution in momentum space and spatial coherence. Conventional photon lasing is recorded in the same device at higher pump powers.

Baten, Md Zunaid; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu; Frost, Thomas; Deshpande, Saniya; Das, Ayan [Center for Photonic and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Lubyshev, Dimitri; Fastenau, Joel M.; Liu, Amy W. K. [IQE, Inc., 119 Technology Drive, Bethlehem, Pennsylvania 18015 (United States)

2014-06-09T23:59:59.000Z

445

Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design  

SciTech Connect (OSTI)

The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

2000-04-25T23:59:59.000Z

446

Fraud-on-the-Market Actions Against Foreign Issuers  

E-Print Network [OSTI]

13 2. Private Right of Action . . . . .can give rise to a private right of action by those damagedby the statement. 2. Private Right of Action Rule 10b-5 does

Fox, Merritt B.

2009-01-01T23:59:59.000Z

447

Design of a GaAs/Ge solar array for unmanned aerial vehicles  

SciTech Connect (OSTI)

Unmanned Aerial Vehicles (UAV) are being proposed for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration airplane. Due to the weight, speed, and altitude constraints imposed on such aircraft, solar array generated electric power is a viable alternative to air-breathing engines. Development of such aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) is currently building a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office. Expected completion of the plane is early 1995, with the airplane currently undergoing flight testing using battery power.

Scheiman, D.A.; Colozza, A.J. [NYMA Setar Inc., Brookpark, OH (United States); Brinker, D.J.; Bents, D.J. [National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center

1994-12-31T23:59:59.000Z

448

Design of a GaAs/Ge solar array for unmanned aerial vehicles  

SciTech Connect (OSTI)

Unmanned Aerial Vehicles (UAV) are being proposed for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration airplane. Due to the weight, speed, and altitude constraints imposed on such aircraft, solar array generated electric power is a viable alternative to air-breathing engines. Development of such aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) is currently building a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office. Expected completion of the plane is early 1995, with the airplane currently undergoing flight testing using battery power.

Scheiman, D.A.; Brinker, D.J.; Bents, D.J.; Colozza, A.J.

1995-03-01T23:59:59.000Z

449

First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures  

E-Print Network [OSTI]

We propose a new method to calculate polarization induced interfacial charges in semiconductor heterostructures using classical electrostatics applied to real-space band diagrams from first principles calculations and apply it to GaN/AlN heterostructures with ultrathin AlN layers (4-6 monolayers). We show that the calculated electric fields and interfacial charges are independent of the exchange-correlation functionals used (local-density approximation and hybrid functionals). We also find the calculated interfacial charge of (6.8 +/- 0.4) x 10^13 cm-2 to be in excellent agreement with experiments and the value of 6.58 x 10^13 cm-2 calculated from bulk polarization constants, validating the use of bulk constants even for very thin films.

Rohan Mishra; Oscar D. Restrepo; Siddharth Rajan; Wolfgang Windl

2011-05-17T23:59:59.000Z

450

Universality and ambiguity in fermionic effective actions  

E-Print Network [OSTI]

We discuss an ambiguity in the one-loop effective action of massive fields which takes place in massive fermionic theories. The universality of logarithmic UV divergences in different space-time dimensions leads to the non-universality of the finite part of effective action, which can be called the non-local multiplicative anomaly. The general criteria of existence of this phenomena are formulated and applied to fermionic operators with different external fields.

Guilherme de Berredo-Peixoto; Dante D. Pereira; Ilya L. Shapiro

2012-01-12T23:59:59.000Z

451

Nuclear facility decommissioning and site remedial actions  

SciTech Connect (OSTI)

The 576 abstracted references on nuclear facility decommissioning, uranium mill tailings management, and site remedial actions constitute the tenth in a series of reports prepared annually for the US Department of Energy's Remedial Action Programs. Citations to foreign and domestic literature of all types--technical reports, progress reports, journal articles, symposia proceedings, theses, books, patents, legislation, and research project descriptions--have been included. The bibliography contains scientific, technical, economic, regulatory, and legal information pertinent to the US Department of Energy's Remedial Action Programs. Major sections are (1) Surplus Facilities Management Program, (2) Nuclear Facilities Decommissioning, (3) Formerly Utilized Sites Remedial Action Program, (4) Facilities Contaminated with Naturally Occurring Radionuclides, (5) Uranium Mill Tailings Remedial Action Program, (6) Uranium Mill Tailings Management, (7) Technical Measurements Center, and (8) General Remedial Action Program Studies. Within these categories, references are arranged alphabetically by first author. Those references having no individual author are listed by corporate affiliation or by publication description. Indexes are provided for author, corporate affiliation, title work, publication description, geographic location, subject category, and keywords.

Owen, P.T.; Knox, N.P.; Ferguson, S.D.; Fielden, J.M.; Schumann, P.L.

1989-09-01T23:59:59.000Z

452

Finding of No Significant Impact, proposed remediation of the Maybell Uranium Mill Processing Site, Maybell, Colorado  

SciTech Connect (OSTI)

The U.S. Department of Energy (DOE) has prepared an environmental assessment (EA) (DOE/EA-0347) on the proposed surface remediation of the Maybell uranium mill processing site in Moffat County, Colorado. The mill site contains radioactively contaminated materials from processing uranium ore that would be stabilized in place at the existing tailings pile location. Based on the analysis in the EA, DOE has determined that the proposed action does not constitute a major federal action significantly affecting the quality of the human environment within the meaning of the National Environmental Policy Act (NEPA) of 1969, Public Law 91-190 (42 U.S.C. {section}4321 et seq.), as amended. Therefore, preparation of an environmental impact statement is not required and DOE is issuing this Finding of No Significant Impact (FONSI).

Not Available

1995-12-31T23:59:59.000Z

453

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect (OSTI)

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

454

AlP/GaP distributed Bragg reflectors  

SciTech Connect (OSTI)

Distributed Bragg reflectors with high reflectivity bands centered at wavelengths from 530 to 690 nm (green to red) based on AlP/GaP quarter-wave stacks are prepared on (001)GaP using gas-source molecular-beam epitaxy. Additionally, the complex refractive index of AlP is measured using spectroscopic ellipsometry within the range of 330-850 nm in order to facilitate an accurate reflector design. Structures consisting of 15 quarter-wave stacks reach a peak reflectance between 95% and 98%, depending on the spectral position of the maximum.

Emberger, Valentin; Hatami, Fariba; Ted Masselink, W. [Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15, D-12489 Berlin (Germany); Peters, Sven [Sentech Instruments GmbH, Schwarzschildstr. 2, 12489 Berlin (Germany)

2013-07-15T23:59:59.000Z

455

Graphene/GaN diodes for ultraviolet and visible photodetectors  

SciTech Connect (OSTI)

The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

2014-08-18T23:59:59.000Z

456

Engineered Solutions: Proposed Penalty (2010-CE-2112)  

Broader source: Energy.gov [DOE]

DOE alleged in a Notice of Proposed Civil Penalty that Engineered Solutions, Inc. failed to certify a dehumidifier as compliant with the applicable energy conservation standards.

457

Whirlpool: Proposed Penalty (2014-CE-21010)  

Broader source: Energy.gov [DOE]

DOE alleged in a Notice of Proposed Civil Penalty that Whirlpool Corporation failed to certify residential clothes dryers as compliant with the applicable energy conservation standards.

458

Allen Co: Proposed Penalty (2010-CW-0715)  

Broader source: Energy.gov [DOE]

DOE alleged in a Notice of Proposed Civil Penalty that Allen Co. failed to certify a variety of faucets as compliant with the applicable water conservation standards.

459

Dacor: Proposed Penalty (2014-CE-23010)  

Broader source: Energy.gov [DOE]

DOE alleged in a Notice of Proposed Civil Penalty that Dacor failed to certify cooking products as compliant with the applicable energy conservation standards.

460

Duro Corporation: Proposed Penalty (2014-CE-23009)  

Broader source: Energy.gov [DOE]

DOE alleged in a Notice of Proposed Civil Penalty that Duro Corporation failed to certify cooking products as compliant with the applicable energy conservation standards.

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Danby Products: Proposed Penalty (2012-CE-1415)  

Broader source: Energy.gov [DOE]

DOE alleged in a Notice of Proposed Civil Penalty that Danby Products, Inc. failed to certify refrigerators and freezers as compliant with the energy conservation standards.

462

University Park “STEP-UP” Proposal  

Broader source: Energy.gov [DOE]

University Park “STEP-UP” Proposal: DE-FOA-0000148, from the Tool Kit Framework: Small Town University Energy Program (STEP).

463

Distinctive Appliances: Proposed Penalty (2014-CE-23020)  

Broader source: Energy.gov [DOE]

DOE alleged in a Notice of Proposed Civil Penalty that Distinctive Appliances Distributing Inc. failed to certify cooking products as compliant with the applicable energy conservation standards.

464

BPA proposes resolution to electricity oversupply  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Portland, Ore. - The Bonneville Power Administration today proposed compensating wind energy producers within its section of the grid for periodically reducing their...

465

Evaluation and Selection of IGPPS Proposals  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Displays a lack of appreciation for major challenges. 1.0 Serious deficiencies render the proposal uninteresting (innovation andor impact) or implausible (team or...

466

ENVIRONMENTAL ASSESSMENT FOR PROPOSED ENERGY CONSERVATION STANDARDS...  

Broader source: Energy.gov (indexed) [DOE]

of power plant emissiohs. The proposed efficiency standards will gnerally decrease air pollution by decreasing future energy demand. The greatest d6er"eases in air pollution...

467

American Valve: Proposed Penalty (2010-CW-1411)  

Broader source: Energy.gov [DOE]

DOE alleged in a Notice of Proposed Civil Penalty that American Valve, Inc. failed to certify a variety of showerheads as compliant with the applicable water conservation standards.

468

Lutron Electronics: Proposed Penalty (2012-SE-3796)  

Broader source: Energy.gov [DOE]

DOE alleged in a Notice of Proposed Civil Penalty that Lutron Electronics Co., Inc. manufactured and distributed noncompliant class A external power supplies in the U.S.

469

Reducing Emissions Through Sustainable Transport: Proposal for...  

Open Energy Info (EERE)

Through Sustainable Transport: Proposal for a Sectoral Approach Jump to: navigation, search Tool Summary LAUNCH TOOL Name: Reducing Emissions Through Sustainable Transport:...

470

Capital Cooking: Proposed Penalty (2014-CE-23008)  

Broader source: Energy.gov [DOE]

DOE alleged in a Notice of Proposed Civil Penalty that Capital Cooking Equipment, Inc. failed to certify cooking products as compliant with the applicable energy conservation standards.

471

Berkeley, California: Solar in Action (Brochure), Solar America...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Berkeley, California: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Berkeley, California: Solar in Action (Brochure), Solar America...

472

Tucson, Arizona: Solar in Action (Brochure), Solar America Cities...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Tucson, Arizona: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Tucson, Arizona: Solar in Action (Brochure), Solar America Cities,...

473

Austin, Texas: Solar in Action (Brochure), Solar America Cities...  

Broader source: Energy.gov (indexed) [DOE]

Austin, Texas: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Austin, Texas: Solar in Action (Brochure), Solar America Cities, Energy...

474

Pittsburgh, Pennsylvania: Solar in Action (Brochure), Solar America...  

Energy Savers [EERE]

Pittsburgh, Pennsylvania: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Pittsburgh, Pennsylvania: Solar in Action (Brochure), Solar...

475

Seattle, Washington: Solar in Action (Brochure), Solar America...  

Broader source: Energy.gov (indexed) [DOE]

Seattle, Washington: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Seattle, Washington: Solar in Action (Brochure), Solar America...

476

Knoxville, Tennessee: Solar in Action (Brochure), Solar America...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Knoxville, Tennessee: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Knoxville, Tennessee: Solar in Action (Brochure), Solar America...

477

Transcript of See Action and Technical Assistance Program Webcast...  

Broader source: Energy.gov (indexed) [DOE]

Transcript of See Action and Technical Assistance Program Webcast: Energy Audit and Retro-Commissioning Policies for Public and Commercial Buildings Transcript of See Action and...

478

Clean Energy Action Star Governor Schwarzenegger to Keynote ARPA...  

Broader source: Energy.gov (indexed) [DOE]

Action Star Governor Schwarzenegger to Keynote ARPA-E Energy Innovation Summit Clean Energy Action Star Governor Schwarzenegger to Keynote ARPA-E Energy Innovation Summit February...

479

Energy Department Actions to Deploy Combined Heat and Power,...  

Broader source: Energy.gov (indexed) [DOE]

Actions to Deploy Combined Heat and Power, Boost Industrial Efficiency Energy Department Actions to Deploy Combined Heat and Power, Boost Industrial Efficiency October 21, 2013 -...

480

Tonopah Test Range Environmental Restoration Corrective Action Sites  

SciTech Connect (OSTI)

This report describes the status (closed, closed in place, or closure in progress) of the Corrective Action Sites and Corrective Action Units at the Tonopah Test Range

NSTec Environmental Restoration

2010-08-04T23:59:59.000Z

Note: This page contains sample records for the topic "ga proposed action" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

PIA - Savannah River Operations Office Executive Commitment Action...  

Energy Savers [EERE]

Operations Office Executive Commitment Action Tracking System PIA - Savannah River Operations Office Executive Commitment Action Tracking System PIA - Savannah River Operations...

482

Policy and Procedures for the Review of Federal Actions Impacting...  

Broader source: Energy.gov (indexed) [DOE]

Policy and Procedures for the Review of Federal Actions Impacting the Environment Policy and Procedures for the Review of Federal Actions Impacting the Environment This manual...

483

CHP: A Technical & Economic Compliance Strategy - SEE Action...  

Broader source: Energy.gov (indexed) [DOE]

CHP: A Technical & Economic Compliance Strategy - SEE Action Webinar, January 2012 CHP: A Technical & Economic Compliance Strategy - SEE Action Webinar, January 2012 This...

484

Two Tribes Recognized as Climate Action Champions During White...  

Office of Environmental Management (EM)

Two Tribes Recognized as Climate Action Champions During White House Tribal Nations Conference Two Tribes Recognized as Climate Action Champions During White House Tribal Nations...

485

United States and Japan Sign Joint Nuclear Energy Action Plan...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Japan Sign Joint Nuclear Energy Action Plan to Promote Nuclear Energy Cooperation United States and Japan Sign Joint Nuclear Energy Action Plan to Promote Nuclear Energy...

486

Energy Literacy in Action: Nevada Teachers Helping Students Learn...  

Office of Environmental Management (EM)

Literacy in Action: Nevada Teachers Helping Students Learn About Energy Energy Literacy in Action: Nevada Teachers Helping Students Learn About Energy November 6, 2014 - 10:48am...

487

Root Cause Analysis (RCA) & Corrective Action Plan (CAP) | Department...  

Energy Savers [EERE]

Root Cause Analysis (RCA) & Corrective Action Plan (CAP) Root Cause Analysis (RCA) & Corrective Action Plan (CAP) Improving the Department of Energy's project and contract...

488

Implement an Institutional Change Action Plan for Sustainability...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Implement an Institutional Change Action Plan for Sustainability Implement an Institutional Change Action Plan for Sustainability Graphic showing 5 gears. They progress from...

489

Develop an Institutional Change Action Plan for Sustainability...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Develop an Institutional Change Action Plan for Sustainability Develop an Institutional Change Action Plan for Sustainability Graphic showing 5 gears. They progress from Determine...

490

San Antonio, Texas: Solar in Action (Brochure), Solar America...  

Energy Savers [EERE]

San Antonio, Texas: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) San Antonio, Texas: Solar in Action (Brochure), Solar America...

491

Denver, Colorado: Solar in Action (Brochure), Solar America Cities...  

Energy Savers [EERE]

Denver, Colorado: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Denver, Colorado: Solar in Action (Brochure), Solar America Cities,...

492

Milwaukee, Wisconsin: Solar in Action (Brochure), Solar America...  

Energy Savers [EERE]

Milwaukee, Wisconsin: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Milwaukee, Wisconsin: Solar in Action (Brochure), Solar America...

493

San Diego, California: Solar in Action (Brochure), Solar America...  

Broader source: Energy.gov (indexed) [DOE]

San Diego, California: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) San Diego, California: Solar in Action (Brochure), Solar...

494

San Francisco, California: Solar in Action (Brochure), Solar...  

Broader source: Energy.gov (indexed) [DOE]

San Francisco, California: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) San Francisco, California: Solar in Action (Brochure),...

495

Portland, Oregon: Solar in Action (Brochure), Solar America Cities...  

Broader source: Energy.gov (indexed) [DOE]

Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) San Francisco, California: Solar in Action (Brochure), Solar America Cities, Energy Efficiency...

496

EAC Recommendations for DOE Action Regarding the Electricity...  

Energy Savers [EERE]

the Electricity Workforce - October 17, 2012 EAC Recommendations for DOE Action Regarding the Electricity Workforce - October 17, 2012 EAC Recommendations for DOE Action Regarding...

497

Urgent Action on Energy Conservation Standards for Residential...  

Energy Savers [EERE]

Urgent Action on Energy Conservation Standards for Residential Water Heaters (Docket Number: EERE-2012-BT-STD-0022) Urgent Action on Energy Conservation Standards for Residential...

498

Ann Arbor, Michigan: Solar in Action (Brochure), Solar America...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Ann Arbor, Michigan: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Ann Arbor, Michigan: Solar in Action (Brochure), Solar America...

499

Madison, Wisconsin: Solar in Action (Brochure), Solar America...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Madison, Wisconsin: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Madison, Wisconsin: Solar in Action (Brochure), Solar America...

500

Chelation: A Fundamental Mechanism of Action of AGE Inhibitors...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Mechanism of Action of AGE Inhibitors, AGE Breakers, and Other Inhibitors of Diabetes Complications. Chelation: A Fundamental Mechanism of Action of AGE Inhibitors, AGE...