National Library of Energy BETA

Sample records for ga proposed action

  1. Description of Proposed Action

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    RECORD OF CATEGORICAL EXCLUSION DETERMINATION 1 Description of Proposed Action Performance of a three-dimensional seismic survey line on approximately 2,409 acres contained within the WIPP Land Withdrawal Area as part of a larger survey to determine whether hydrocarbons are present in the region in quantities that warrant extraction and development. Number and Title of Applicable Categorical Exclusion B3.1 Site Characterization/Environmental Monitoring Activities covered by this Categorical

  2. Environmental Assessment - Proposed Actions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    availability of Waste Isolation Pilot Plant (WIPP) facilities and infrastructure to scientists who wish to conduct experiments there. DOE would allow these experiments if they can be conducted without interfering with the WIPP's primary transuranic waste disposal mission and if they reflect contemporary budget priorities. This fact sheet presents questions and answers about the proposed action and its alternative. The deep geologic repository at the WIPP could provide a favorable environment for

  3. Implementation Proposal for the National Action Plan on Demand...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Implementation Proposal for the National Action Plan on DemandResponse - July 2011 Implementation Proposal for the National Action Plan on Demand Response - July 2011 Report to ...

  4. N Springs expedited response action proposal

    SciTech Connect (OSTI)

    Not Available

    1994-01-01

    Since signing the Hanford Federal Facility Agreement and Consent Order (Tri-Party Agreement) in 1989, the parties to the agreement have recognized the need to modify the approach to conducting investigations, studies, and cleanup actions at Hanford. To implement this approach, the parties have jointly developed the Hanford Past-Practice Strategy. The strategy defines a non-time-critical expedited response action (ERA) as a response action ``needed to abate a threat to human health or welfare or the environment where sufficient time exists for formal planning prior to initiation of response. In accordance with the past-practice strategy, DOE proposes to conduct an ERA at the N Springs, located in the Hanford 100 N Area, to substantially reduce the strontium-90 transport into the river through the groundwater pathway. The purpose of this ERA proposal is to provide sufficient information to select a preferred alternative at N Springs. The nature of an ERA requires that alternatives developed for the ERA be field ready; therefore, all the technologies proposed for the ERA should be capable of addressing the circumstances at N Springs. A comparison of these alternatives is made based on protectiveness, cost, technical feasibility, and institutional considerations to arrive at a preferred alternative. Following the selection of an alternative, a design phase will be conducted; the design phase will include a detailed look at design parameters, performance specifications, and costs of the selected alternative. Testing will be conducted as required to generate design data.

  5. Implementation Proposal for the National Action Plan on Demand Response -

    Office of Environmental Management (EM)

    July 2011 | Department of Energy Implementation Proposal for the National Action Plan on Demand Response - July 2011 Implementation Proposal for the National Action Plan on Demand Response - July 2011 Report to Congress prepared by the staff of the Federal Energy Regulatory Commission (FERC) and the Department of Energy. PDF icon Implementation Proposal for the National Action Plan on Demand Response - July 2011 More Documents & Publications National Action Plan on Demand Response, June

  6. ACTION DESCRIPTION MEMORANDUM PROPOSED DECONTAMINATION OF THREE BUILDINGS AT THE

    Office of Legacy Management (LM)

    ACTION DESCRIPTION MEMORANDUM PROPOSED DECONTAMINATION OF THREE BUILDINGS AT THE UNIVERSITY OF CHICAGO CONTAMINATED AS A RESULT OF PREVIOUS MED/AEC ACTIVITIES Prepared by Environmental Research Division Argonne National Laboratory Argonne, Illinois December 1983 Prepared for U.S. Department of Energy Oak Ridge Operations Technical Services Division Oak Ridge, Tennessee II-39 CONTENTS Page Summary of Proposed Action ....................... 1 Setting . . . . . . . . . . . . . . . . . . . . . . . .

  7. EA-2005: Notice of Proposed Floodplain Action | Department of Energy

    Energy Savers [EERE]

    Notice of Proposed Floodplain Action EA-2005: Notice of Proposed Floodplain Action Chromium Plume Control Interim Measure and Plume-Center Characterization, Los Alamos National Laboratory, Los Alamos, NM The Department of Energy Environmental Management Los Alamos Field Office has prepared a Draft Environmental Assessment for the Chromium Plume Control Interim Measure and Plume-Center Characterization at the Los Alamos National Laboratory (LANL). This provides notice of proposed floodplain

  8. The NEPA threshold question revisited: Proposed'' actions and continuing'' activities

    SciTech Connect (OSTI)

    Wolff, T.A. ); Hansen, R.P. )

    1993-01-01

    The National Environmental Policy Act (NEPA) requires Federal agencies to include a detailed statement'' in every recommendation or report on proposals'' for major Federal actions significantly affecting the quality of the human environment.'' Unless the three elements of a proposal are present (major, federal, and action), preparation of a detailed statement is not required. This paper addresses the practical decision-making dilemma that attends determinations of what types of Federal activities meet the NEPA threshold test under what kinds of varying circumstances. The authors' experience with the US Dept. of Energy (DOE) NEPA documentation is used to discuss how decisions may be made to determine whether a proposed action qualifies for a categorical exclusion'' or whether it requires preparation of an environmental assessment (EA) or an environmental impact statement (EIS). The concept of new'' actions versus continuing'' actions which may be bounded'' by previous NEPA documentation is also discussed. A dichotomous key for separating or combining Federal action'' candidates for different levels of NEPA documentation is provided. Leading court opinions on the threshold question and related issues are discussed in lay terms.

  9. DOE/EA-1915 MITIGATION ACTION PLAN PROPOSED CONVEYANCE OF LAND AT THE HANFORD SITE,

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    EA for Conveyance of Land at the Hanford Site, Richland, WA Page 1 of 6 September 2015 DOE/EA-1915 MITIGATION ACTION PLAN PROPOSED CONVEYANCE OF LAND AT THE HANFORD SITE, RICHLAND, WASHINGTON AGENCY: U.S. Department of Energy Richland Operations Office ACTION: Mitigation Action Plan SUMMARY: This Mitigation Action Plan (MAP) is an integral part of the Finding of No Significant Impact (FONSI) for the United States Department of Energy's (DOE) Environmental Assessment for Proposed Conveyance of

  10. DOE/EA-1915 MITIGATION ACTION PLAN PROPOSED CONVEYANCE OF LAND AT THE HANFORD SITE,

    Office of Environmental Management (EM)

    EA for Conveyance of Land at the Hanford Site, Richland, WA Page 1 of 6 September 2015 DOE/EA-1915 MITIGATION ACTION PLAN PROPOSED CONVEYANCE OF LAND AT THE HANFORD SITE, RICHLAND, WASHINGTON AGENCY: U.S. Department of Energy Richland Operations Office ACTION: Mitigation Action Plan SUMMARY: This Mitigation Action Plan (MAP) is an integral part of the Finding of No Significant Impact (FONSI) for the United States Department of Energy's (DOE) Environmental Assessment for Proposed Conveyance of

  11. CEQ Guidance on the Application of NEPA to Proposed Federal Actions in the

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    United States with Transboundary Effects | Department of Energy Guidance on the Application of NEPA to Proposed Federal Actions in the United States with Transboundary Effects CEQ Guidance on the Application of NEPA to Proposed Federal Actions in the United States with Transboundary Effects CEQ Guidance on the Application of NEPA to Proposed Federal Actions in the United States with Transboundary Effects The purpose of this guidance is to clarify the applicability of the National

  12. Title 40 CFR 1502.14 Alternatives Including the Proposed Action...

    Open Energy Info (EERE)

    .14 Alternatives Including the Proposed Action Jump to: navigation, search OpenEI Reference LibraryAdd to library Legal Document- Federal RegulationFederal Regulation: Title 40 CFR...

  13. Chromium Project Notice of Proposed Floodplain Action Public Comment Period Closes November 20th,

    Office of Environmental Management (EM)

    Chromium Project Notice of Proposed Floodplain Action Public Comment Period Closes November 20th, 2015 The Department of Energy Environmental Management Los Alamos Field Office has prepared a Draft Environmental Assessment for the Chromium Plume Control Interim Measure and Plume-Center Characterization at the Los Alamos National Laboratory (LANL). The proposed action may include well pad and access road installation and maintenance, piezometer placement, and pipeline placement in the 100-year

  14. Action

    National Nuclear Security Administration (NNSA)

    Register / Vol. 72, No. 39 1 Wednesday, February 28, 2007 /Notices 9037 - has requested this exemption in order to revise the October 1988 exemption to include additional combustibles such as the 480V Reactor Building Vent Boards lB, 2B, and 3B; small panels in Units 1, 2 and 3; and the one hour fire rated fire wrap (Thermo-lag) material for the 20- foot separation zones identified. Environmental Impacts of the Proposed Action The proposed action will not significantly increase the probability

  15. Proposed Action Title: U.S. Department of Energy Southwestern Power Administration

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Storm Shelter Construction Project Program or Field Office: Southwestern Power Administration Location(s) (City/County/State): Gore/Muskogee/Oklahoma; Jonesboro/Craighead/ Arkansas SWPAF 450.4 (Rev. 05/14) Proposed Action Description: Southwestern Power Administration proposes to construct aboveground storm shelters at at the Gore and Jonesboro Maintenance Facilities. Categorical Exclusion(s) Applied: 10 CFR 1021, Appendix 8 to Subpart D, Part 82.3. Installation of, or improvements to, equipment

  16. Proposed Action Title: U.S. Department of Energy Southwestern Power Administration

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transmission Line Segment Modification, Line 3004, Structures 39, 39A, and 40 Program or Field Office: Southwestern Power Administration Location(s) (City/County/State): Springfield, Christian County, Missouri SWPA F450.4 (Rev. 2/16) Proposed Action Description: Southwestern Power Administration proposes to modify and relocate a small seqment of transmission line to accommodate and provide safety clearance for a retail development project in an urbanized section of Springfield, Missouri.

  17. Appliance Standard Program - The FY 2003 Priority -Setting Summary Report and Actions Proposed

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Appliance Standards Program The FY 2003 Priority- Setting Summary Report and Actions Proposed Date: August 22, 2002 Table of Contents i EXECUTIVE SUMMARY.............................................................................................. iv 1 Energy Conservation Program - Product Prioritization Process.......1-1 1.1 Background on Appliance Standards Program........................................... 1-1 1.2 DOE Authority to Add Products

  18. Environmental Assessment for Conducting Astrophysics and Other Basic Science Experiments - Chapter 2 Proposed Action and Alternatives

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2-1 CHAPTER 2 PROPOSED ACTION AND ALTERNATIVES Some types of experiments are best (or only) performed deep underground. For this reason, scientists have considered WIPP as a potential site for these types of experiments and have sought permission from DOE to conduct several types of experiments there. As an example, astrophysicists are searching for very small particles with no charge called neutrinos. These particles are so small that they typically pass through the Earth. The only way to

  19. Operable Unit 3: Proposed Plan/Environmental Assessment for interim remedial action

    SciTech Connect (OSTI)

    Not Available

    1993-12-01

    This document presents a Proposed Plan and an Environmental Assessment for an interim remedial action to be undertaken by the US Department of Energy (DOE) within Operable Unit 3 (OU3) at the Fernald Environmental Management Project (FEMP). This proposed plan provides site background information, describes the remedial alternatives being considered, presents a comparative evaluation of the alternatives and a rationnale for the identification of DOE`s preferred alternative, evaluates the potential environmental and public health effects associated with the alternatives, and outlines the public`s role in helping DOE and the EPA to make the final decision on a remedy.

  20. Proposed measurement of spin currents in a GaAs crystal using the electro-optical Pockels effect

    SciTech Connect (OSTI)

    Zhang, Xingchu; Zheng, Yongjun; She, Weilong

    2014-07-14

    A new method for measuring spin currents is proposed, based on the linear electro-optic (Pockels) effect caused by the additional second-order nonlinear electric susceptibility (electro-optic tensor) generated by the spin currents. The non-zero elements of electro-optic tensor induced by spin currents in GaAs crystal are calculated, and the wave coupling theory of linear electro-optic effect is used to analyze the polarization change of a probe beam. The numerical results show that, for a linearly polarized probe beam with a frequency close to the band gap of GaAs crystal, its polarization rotation can be as large as 14 μrad under an applied electric field of about 350 V/mm. This effect should offer an alternative detection method for spintronics.

  1. DOE and FERC Jointly Submit Implementation Proposal for The National Action Plan on Demand Response to Congress

    Broader source: Energy.gov [DOE]

    The U.S. Department of Energy and the Federal Energy Regulatory Commission (FERC) jointly submitted to Congress a required “Implementation Proposal for The National Action Plan on Demand Response.”

  2. Finding of no significant impact proposed corrective action for the Northeast Site at the Pinellas Plant in Largo, Florida

    SciTech Connect (OSTI)

    1995-06-01

    The U.S. Department of Energy (DOE) has prepared an Environmental Assessment (EA) (DOE/EA-0976) of the proposed corrective action for the Northeast Site at the Pinellas Plant in Largo, Florida. The Northeast Site contains contaminated groundwater that would be removed, treated, and discharged to the Pinellas County Sewer System. Based on the analyses in the EA, the DOE has determined that the proposed action is not a major Federal action significantly affecting the quality of the human environment, within the meaning of the National Environmental Policy Act of 1969 (NEPA), 42 U.S.C.4321 et.seq. Therefore, the preparation of an environmental impact statement is not required and the DOE is issuing this Finding of No Significant Impact (FONSI).

  3. Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposals Sign In About | Careers | Contact | Investors | bpa.gov Search Doing Business Expand Doing Business Customer Involvement Expand Customer Involvement Reports & Tools...

  4. Proposed

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposed Settlement for Hanford Cleanup U.S. Department of Energy ● Washington State Department of Ecology * U.S. Environmental Protection Agency What's this proposed settlement about? Public Comment The Tri-Party Agreement agencies want your feedback. The public comment period is from October 1 through December 11, 2009. These new commitments would address important activities that are needed to protect human health and the environment. The settlement will impose a new, enforceable and

  5. Review and analysis of proposed EPA groundwater standards for the UMTRA Project. [Uranium Mill Tailings Remedial Action (UMTRA) Project

    SciTech Connect (OSTI)

    Not Available

    1987-10-01

    The Title I groundwater standards for inactive uranium mill tailings sites, which were promulgated on January 5, 1983, by the US Environmental Protection Agency (EPA) for the Uranium Mill Tailings Remedial Action (UMTRA) Project, were remanded to the EPA on September 3, 1985, by the US Tenth Circuit Court of Appeals. The Court instructed the EPA to compile general groundwater standards for all sites. On September 24, 1987, the EPA published proposed standards in response to the remand. This Summary Report includes an evaluation of the potential effects of the proposed EPA groundwater standards on the UMTRA Project as well as a discussion of the DOE's position on the proposed standards. This report is accompanied by a detailed Technical Report and Appendices which provide supporting information and analyses. This Summary Report results from a study undertaken to: determine the impact of the proposed standards on the UMTRA Project; and recommend provisions for the implementation of the final standards that will minimize adverse impact to the conduct of the UMTRA Project while ensuring protection of human health and the environment. Specifically, the following were considered: the flexibility of the proposed standards; interpretations of the proposed standards; the extent of aquifer restoration that may be required to implement the proposed standards at each site; the costs of aquifer restoration; and design changes necessary to meet the standards.

  6. US Department of Energy response to standards for remedial actions at inactive uranium processing sites: Proposed rule

    SciTech Connect (OSTI)

    Not Available

    1988-01-29

    The Title I groundwater standards for inactive uranium mill tailings sites, which were promulgated on January 5, 1983, by the US Environmental Protection Agency (EPA) for the Uranium Mill Tailings Remedial Action (UMTRA) Project, were remanded to the EPA on September 3, 1985, by the US Tenth Circuit Court of Appeals. The Court instructed the EPA to compile general groundwater standards for all Title I sites. On September 24, 1987, the EPA published proposed standards (52FR36000-36008) in response to the remand. This report includes an evaluation of the potential effects of the proposed EPA groundwater standards on the UMTRA Project, as well as a discussion of the DOE's position on the proposed standards. The report also contains and appendix which provides supporting information and cost analyses. In order to assess the impacts of the proposed EPA standards, this report summarizes the proposed EPA standards in Section 2.0. The next three sections assess the impacts of the three parts of the EPA standards: Subpart A considers disposal sites; Subpart B is concerned with restoration at processing sites; and Subpart C addresses supplemental standards. Section 6.0 integrates previous sections into a recommendations section. Section 7.0 contains the DOE response to questions posed by the EPA in the preamble to the proposed standards. 6 refs., 5 figs., 3 tabs.

  7. Proposed mechanism to represent the suppression of dark current density by four orders with low energy light ion (H{sup ?}) implantation in quaternary alloy-capped InAs/GaAs quantum dot infrared photodetectors

    SciTech Connect (OSTI)

    Mandal, A.; Ghadi, H.; Mathur, K.L.; Basu, A.; Subrahmanyam, N.B.V.; Singh, P.; Chakrabarti, S.

    2013-08-01

    Graphical abstract: - Abstract: Here we propose a carrier transport mechanism for low energy H{sup ?} ions implanted InAs/GaAs quantum dot infrared photodetectors supportive of the experimental results obtained. Dark current density suppression of up to four orders was observed in the implanted quantum dot infrared photodetectors, which further demonstrates that they are effectively operational. We concentrated on determining how defect-related material and structural changes attributed to implantation helped in dark current density reduction for InAs/GaAs quantum dot infrared photodetectors. This is the first study to report the electrical carrier transport mechanism of H{sup ?} ion-implanted InAs/GaAs quantum dot infrared photodetectors.

  8. Environmental Assessment for the proposed modification and continued operation of the DIII-D facility

    SciTech Connect (OSTI)

    NONE

    1995-07-01

    The EA evaluates the proposed action of modifying the DIII-D fusion facility and conducting related research activities at the GA San Diego site over 1995-1999 under DOE contract number DE-ACO3-89ER51114. The proposed action is need to advance magnetic fusion research for future generation fusion devices such as ITER and TPX. It was determined that the proposed action is not a major action significantly affecting the quality of the human environment according to NEPA; therefore a finding of no significant impact is made and an environmental impact statement is not required.

  9. Proposal of high efficiency solar cells with closely stacked InAs/In{sub 0.48}Ga{sub 0.52}P quantum dot superlattices: Analysis of polarized absorption characteristics via intermediateband

    SciTech Connect (OSTI)

    Yoshikawa, H. Kotani, T.; Kuzumoto, Y.; Izumi, M.; Tomomura, Y.; Hamaguchi, C.

    2014-07-07

    We present a theoretical study of the electronic structures and polarized absorption properties of quantum dot superlattices (QDSLs) using widegap matrix material, InAs/In{sub 0.48}Ga{sub 0.52}P QDSLs, for realizing intermediateband solar cells (IBSCs) with twostep photonabsorption. The planewave expanded BurtForeman operator ordered 8band kp theory is used for this calculation, where strain effect and piezoelectric effect are taken into account. We find that the absorption spectra of the second transitions of twostep photonabsorption can be shifted to higher energy region by using In{sub 0.48}Ga{sub 0.52}P, which is latticematched material to GaAs substrate, as a matrix material instead of GaAs. We also find that the transverse magnetic polarized absorption spectra in InAs/In{sub 0.48}Ga{sub 0.52}P QDSL with a separate IB from the rest of the conduction minibands can be shifted to higher energy region by decreasing the QD height. As a result, the second transitions of twostep photonabsorption by the sunlight occur efficiently. These results indicate that InAs/In{sub 0.48}Ga{sub 0.52}P QDSLs are suitable material combination of IBSCs toward the realization of ultrahigh efficiency solar cells.

  10. A hole modulator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2015-02-09

    The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ?332?meV to ?294?meV at 80?A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

  11. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect (OSTI)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  12. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  13. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  14. Categorical Exclusion Determination Form Proposed Action Title...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    modeling, and analysis of actual system flow information in a simulated environment. Project work will take place at Smart Wire Grid, Inc. (Oakland, CA), Innoventor, Inc. (Earth ...

  15. Chapter 2 - Proposed Action and Alternatives

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    In the past, WIPP-related actinide chemistry experiments have taken place at DOE laboratory facilities at other DOE sites such as LANL. However, due to reductions in travel...

  16. Notice_of_Proposed_Action.pdf

    Office of Legacy Management (LM)

  17. Corrective Action

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Corrective Action Individual Permit: Corrective Action Certifications If confirmation monitoring sample results demonstrate that one or more TALs are exceeded at a Site, the permittees are required to initiate corrective action. Contact Environmental Communication & Public Involvement P.O. Box 1663 MS M996 Los Alamos, NM 87545 (505) 667-0216 Email Corrective Action Certifications Certification of Corrective Action Complete is demonstrated by one of the following: Eliminate Exposure (11 SMAs,

  18. Proposed Tri-Party Agreement Modifications

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposed Tri-Party Agreement Modifications for Initial Single Shell Tank Waste Management Area Corrective Actions, Vadose Zone and Groundwater...

  19. Proposed Rules Federal Register

    Energy Savers [EERE]

    5383 Vol. 81, No. 21 Tuesday, February 2, 2016 DEPARTMENT OF ENERGY 10 CFR Part 900 RIN 1901-AB36 Coordination of Federal Authorizations for Electric Transmission Facilities AGENCY: Office of Electricity Delivery and Energy Reliability, Department of Energy. ACTION: Notice of proposed rulemaking. SUMMARY: The Department of Energy (DOE) proposes to amend its regulations for the timely coordination of Federal Authorizations for proposed interstate electric transmission facilities pursuant to

  20. Action Items

    Office of Environmental Management (EM)

    ACTION ITEMS Presentation to the DOE High Level Waste Corporate Board July 29, 2009 Kurt Gerdes Office of Waste Processing DOE-EM Office of Engineering & Technology 2 ACTION ITEMS...

  1. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA | Department

    Office of Environmental Management (EM)

    of Energy 6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA February 8, 2012 EIS-0476: Final Environmental Impact Statement Department of Energy Loan Guarantees for Proposed Units 3 and 4 at the Vogtle Electric Generating Plant, Burke County, GA February 25, 2014 EIS-0476: Record of Decision Department of Energy Loan Guarantees for Proposed Units 3 and 4 at the Vogtle Electric Generating Plant, Burke County, GA

  2. RAPIDD Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    by ALS management, appropriate to the proposal. Rapid Access Proposals (RA) A proportion of beam time on some beamlines is reserved to provide rapid access for simple,...

  3. ACTION PLAN

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    hazardous waste permitting, meeting closure and postclosure requirements, and remedial action under the Federal Resource Conservation and Recovery Act (RCRA) and Comprehensive...

  4. United States Forest Service - Forest Service Schedule of Proposed...

    Open Energy Info (EERE)

    Actions Jump to: navigation, search OpenEI Reference LibraryAdd to library Web Site: United States Forest Service - Forest Service Schedule of Proposed Actions Abstract The...

  5. RAPIDD Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    RAPIDD Proposals Print The combined process for Rapid Access Proposals, Industry, and Director's Discretion (RAPIDD) beam time accommodates users who require limited or rapid access to ALS beam time. There are a number of proposal types that are available on a variety of beamlines, as described below. Log in to ALSHub to submit a RAPIDD proposal. The RAPIDD process is not suitable for users requiring significant beam time for an extended program of research or those wanting to perform complex

  6. Corrective Action

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of Corrective Action Complete is demonstrated by one of the following: Eliminate Exposure (11 SMAs, 16 Sites) SMA SITE Submittal Date Document 2M-SMA-2.2 03-003(k) September...

  7. EIS-0389: Mitigation Action Plan | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Action Plan EIS-0389: Mitigation Action Plan Trinity Public Utilities District Direct Interconnection Project Western Area Power Administration (Western) proposes to...

  8. ADDENDUM TO ACTION DESCRIPTION MEMORANDUM NIAGARA FALLS STORAGE...

    Office of Legacy Management (LM)

    ACTION DESCRIPTION MEMORANDUM NIAGARA FALLS STORAGE SITE PROPOSED INTERIM REMEDIAL ACTIONS ... July 1984 Prepared for U.S. Department of Energy Oak Ridge Operations Technical Services ...

  9. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  10. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  11. Mitigation Action Plan

    SciTech Connect (OSTI)

    Not Available

    1994-02-01

    This Mitigation Action Plan (MAP) focuses on mitigation commitments stated in the Supplemental Environmental Impact Statement (SEIS) and the Record of Decision (ROD) for the Naval Petroleum Reserve No. 1 (NPR-1). Specific commitments and mitigation implementation actions are listed in Appendix A-Mitigation Actions, and form the central focus of this MAP. They will be updated as needed to allow for organizational, regulatory, or policy changes. It is the intent of DOE to comply with all applicable federal, state, and local environmental, safety, and health laws and regulations. Eighty-six specific commitments were identified in the SEIS and associated ROD which pertain to continued operation of NPR-1 with petroleum production at the Maximum Efficient Rate (MER). The mitigation measures proposed are expected to reduce impacts as much as feasible, however, as experience is gained in actual implementation of these measures, some changes may be warranted.

  12. Proposal Process

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposal Process Network R&D Software-Defined Networking (SDN) Experimental Network Testbeds 100G SDN Testbed Testbed Description Proposal Process Terms and Conditions Dark Fiber Testbed Test Circuit Service Testbed Results Current Testbed Research Previous Testbed Research Performance (perfSONAR) Software & Tools Development Data for Researchers Partnerships Publications Workshops Contact Us Technical Assistance: 1 800-33-ESnet (Inside US) 1 800-333-7638 (Inside US) 1 510-486-7600

  13. Proposed Rules

    National Nuclear Security Administration (NNSA)

    4414 Federal Register / Vol. 78, No. 209 / Tuesday, October 29, 2013 / Proposed Rules NRC about the availability of information for the proposed Waste Confidence rule and DGEIS. You may access publicly available information related to these documents by any of the following methods: * Federal Rulemaking Web Site: Go to http://www.regulations.gov and search for Docket ID NRC-2012-0246. * NRC's Waste Confidence Web site: Go to http://www.nrc.gov/waste/spent- fuel-storage/wcd.html. * NRC's

  14. Unsolicited Proposals

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    2002-02-27

    The order sets forth Department of Energy (DOE) requirements and responsibilities for the receipt, processing, and review of unsolicited proposals (USPs). To ensure that those submitting USPs are notified in a timely manner of the status (e.g., pending, accepted for funding, or declined) of their Supersedes DOE O 542.2. Certified 12-28-06.

  15. DOE Initiates Enforcement Actions Against 4 Showerhead Manufacturers...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Proposed Civil Penalty and Requests for Test Data Issued) DOE Initiates Enforcement Actions Against 4 Showerhead Manufacturers (Notice of Proposed Civil Penalty and ...

  16. Defining the no action alternative for NEPA document of continuing actions

    SciTech Connect (OSTI)

    McCold, L.N.; Saulsbury, J.W.

    1995-12-01

    Environmental professionals today must address many issues that might not have been foreseen by developers of the National Environmental Policy Act of 1969 (NEPA) or the President`s Council on Environmental Quality (CEQ) regulations for implementing NEPA. One issue is the definition of the no action alternative for NEPA documentation of continuing actions. The CEQ regulations do not define the no action alternative, but merely state that NEPA analyses shall {open_quotes}include the alternative of no action{close_quotes}. For NEPA analyses of newly proposed actions, the practical definition of the no action alternative is clear (i.e., the agency will not implement the proposed action or alternative actions). However, the practical definition for NEPA analyses of continuing actions is not so clear. To clarify the definition of the no action alternative for continuing actions, particularly those that involve agency decisions about relicensing existing projects or continuing to operate existing programs or facilities. In trying to clarify the definition of the no action alternative for continuing actions, this paper examines the function of the no action alternative for NEPA analyses in general. Pertinent issues include how the definition of the no action alternative affects the selection of the baseline for environmental analysis and whether inclusion of the no action alternative really forces agencies to consider no action as a realistic alternative. To address these issues, this paper begins with a discussion of relevant legal decisions involving the no action alternative in NEPA analyses. The paper then examines some agency NEPA regulations and recent NEPA documents to provide examples of how some agencies address the no action alternative for continuing actions. Finally, the paper suggests definitions of the no action alternative for continuing actions and methods for addressing no action as a realistic alternative.

  17. A Proposal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Proposal for a New Experiment Using the Booster and NuMI Neutrino Beamlines: MicroBooNE October 15, 2007 H. Chen, J. Farrell, F. Lanni, D. Lissauer, D. Makowiecki, J. Mead, V. Radeka, S. Rescia, J. Sondericker, B. Yu Brookhaven National Laboratory, Upton, NY L. Bugel, J. M. Conrad, V. Nguyen, M. Shaevitz, W. Willis ‡ Columbia University, New York, NY C. James, S. Pordes, G. Rameika Fermi National Accelerator Laboratory, Batavia, IL C. Bromberg, D. Edmunds Michigan State University, Lansing,

  18. Ultra High p-doping Material Research for GaN Based Light Emitters

    SciTech Connect (OSTI)

    Vladimir Dmitriev

    2007-06-30

    The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

  19. RCRA corrective action determination of no further action

    SciTech Connect (OSTI)

    1996-06-01

    On July 27, 1990, the U.S. Environmental Protection Agency (EPA) proposed a regulatory framework (55 FR 30798) for responding to releases of hazardous waste and hazardous constituents from solid waste management units (SWMUs) at facilities seeking permits or permitted under the Resource Conservation and Recovery Act (RCRA). The proposed rule, `Corrective Action for Solid Waste Management Units at Hazardous Waste Facilities`, would create a new Subpart S under the 40 CFR 264 regulations, and outlines requirements for conducting RCRA Facility Investigations, evaluating potential remedies, and selecting and implementing remedies (i.e., corrective measures) at RCRA facilities. EPA anticipates instances where releases or suspected releases of hazardous wastes or constituents from SWMUs identified in a RCRA Facility Assessment, and subsequently addressed as part of required RCRA Facility Investigations, will be found to be non-existent or non-threatening to human health or the environment. Such releases may require no further action. For such situations, EPA proposed a mechanism for making a determination that no further corrective action is needed. This mechanism is known as a Determination of No Further Action (DNFA) (55 FR 30875). This information Brief describes what a DNFA is and discusses the mechanism for making a DNFA. This is one of a series of Information Briefs on RCRA corrective action.

  20. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Mreke, Janina Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  1. GA SNC Solar | Open Energy Information

    Open Energy Info (EERE)

    GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and Sierra Nevada Corp. References: GA-SNC...

  2. Discovery in Action - Pacific Northwest National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Discovery in Action Discovery in Action

  3. Defining the no-action alternative for National Environmental Policy Act analyses of continuing actions

    SciTech Connect (OSTI)

    McCold, L.N.; Saulsbury, J.W.

    1998-01-01

    The Council on Environmental Quality (CEQ) regulations for implementing the National Environmental Policy Act of 1969 (NEPA) do not define the no-action alternative, stating only that EPA analyses shall include the alternative of no action. The definition of the no-action alternative for newly proposed actions seems clear. However, for continuing actions, the meaning of the no-action alternative is ambiguous. This article examines the overall function of the no-action alternative for NEPA analyses of continuing actions. It begins with a discussion of the conflicting definitions of the no-action alternative for continuing activities, including CEQ regulations and guidelines related to the no-action alternative and legal decisions that have helped establish precedence for defining no action. A review of NEPA regulations and guidelines of 10 federal agencies shows how different agencies define no-action for continuing actions. Review of six recent NEPA documents on continuing actions reveals how their definition of the no-action alternative promote or impede informed decision-making.

  4. 30-Day Federal Register Notice - Proposed

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Revised 11-2009 30-Day Federal Register Notice - Proposed [6450-01-P] DEPARTMENT OF ENERGY Proposed Agency Information Collection AGENCY: U.S. Department of Energy. ACTION: Notice and Request for OMB Review and Comment SUMMARY: The Department of Energy (DOE) has submitted to the Office of Management and Budget (OMB) for clearance, a proposal for collection of information under the provisions of the Paperwork Reduction Act of 1995. The proposed collection will {enter a brief description of the

  5. 30-Day Federal Register Notice - Proposed

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    30-Day Federal Register Notice - Proposed [6450-01-P] DEPARTMENT OF ENERGY Proposed Agency Information Collection AGENCY: U.S. Department of Energy. ACTION: Notice and Request for OMB Review and Comment SUMMARY: The Department of Energy (DOE) has submitted to the Office of Management and Budget (OMB) for clearance, a proposal for collection of information under the provisions of the Paperwork Reduction Act of 1995. The proposed collection will {enter a brief description of the collection that

  6. 60-DAY Federal Register Notice - Proposed

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Proposed [6450-01-P] DEPARTMENT OF ENERGY Proposed Agency Information Collection AGENCY: U.S. Department of Energy ACTION: Notice and Request for Comments SUMMARY: The Department of Energy (DOE) invites public comment on a proposed collection of information that DOE is developing for submission to the Office of Management and Budget (OMB) pursuant to the Paperwork Reduction Act of 1995. Comments are invited on: (a) whether the proposed collection of information is necessary for the proper

  7. QER- Comment of Berkshire Environmental Action Team

    Broader source: Energy.gov [DOE]

    Dear members of the Quadrennial Energy Review Task Force, Please find attached comments from the Berkshire Environmental Action Team, Inc. (BEAT) regarding the proposed natural gas pipeline expansion. Thank you for considering our comments.

  8. Electronic contribution to friction on GaAs

    SciTech Connect (OSTI)

    Applied Science and Technology Graduate Group, UC Berkeley; Dept. of Materials Sciences and Engineering, UC Berkeley; Salmeron, Miquel; Qi, Yabing; Park, J.Y.; Hendriksen, B.L.M.; Ogletree, D.F.; Salmeron, Miquel

    2008-04-15

    The electronic contribution to friction at semiconductor surfaces was investigated by using a Pt-coated tip with 50nm radius in an atomic force microscope sliding against an n-type GaAs(100) substrate. The GaAs surface was covered by an approximately 1 nm thick oxide layer. Charge accumulation or depletion was induced by the application of forward or reverse bias voltages. We observed a substantial increase in friction force in accumulation (forward bias) with respect to depletion (reverse bias). We propose a model based on the force exerted by the trapped charges that quantitatively explains the experimental observations of excess friction.

  9. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  10. EIS-0385: Notice of Proposed Floodplain and Wetland Actions ...

    Broader source: Energy.gov (indexed) [DOE]

    Announcement The Department of Energy (DOE) is preparing an environmental impact statement (EIS) for site selection for expansion of the Strategic Petroleum Reserve, as required by...

  11. Property:NEPA Proposed Action | Open Energy Information

    Open Energy Info (EERE)

    line (Alternative D) or two parallel lines (Alternative E) running 63 miles from the Red Substation near Killdeer to the new White Substation and on to the Blue Substation and...

  12. RCRA corrective action program guide (Interim)

    SciTech Connect (OSTI)

    Not Available

    1993-05-01

    The US Department of Energy (DOE) is responsible for compliance with an increasingly complex spectrum of environmental regulations. One of the most complex programs is the corrective action program proposed by the US Environmental Protection Agency (EPA) under the authority of the Resource Conservation and Recovery Act (RCRA) as amended by the Hazardous and Solid Waste Amendments (HSWA). The proposed regulations were published on July 27, 1990. The proposed Subpart S rule creates a comprehensive program for investigating and remediating releases of hazardous wastes and hazardous waste constituents from solid waste management units (SWMUs) at facilities permitted to treat, store, or dispose of hazardous wastes. This proposed rule directly impacts many DOE facilities which conduct such activities. This guidance document explains the entire RCRA Corrective Action process as outlined by the proposed Subpart S rule, and provides guidance intended to assist those persons responsible for implementing RCRA Corrective Action at DOE facilities.

  13. General Atomics (GA) | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Atomics (GA) Subscribe to RSS - General Atomics (GA) General Atomics Image: General Atomics (GA) The Scorpion's Strategy: "Catch and Subdue" Read more about The Scorpion's Strategy: "Catch and Subdue" Frozen Bullets Tame Unruly Edge Plasmas in Fusion Experiment Read more about Frozen Bullets Tame Unruly Edge Plasmas in Fusion Experiment General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement Read more about General Atomics (GA) Fusion News: A

  14. EIS-0384: Mitigation Action Plan | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    project designers and reviewers minimized short-term and long-term environmental and social impacts of the Proposed Action through project design, consultation with regulatory...

  15. EIS-0425: Mitigation Action Plan | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Project BPA decided to implement the Proposed Action of the Mid-Columbia Coho Restoration Program as described in the Mid-Columbia Coho Restoration Program Final Environmental...

  16. EA-1934: Mitigation Action Plan | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    impacts resulting from implementation of the proposed action. PDF icon EA-1934-FEA-MAP-2013.pdf More Documents & Publications EA-1934: 2014 Annual Report for Mitigation...

  17. Mitigation Action Plans (MAP) and Related Documents | Department...

    Broader source: Energy.gov (indexed) [DOE]

    EA-1704: Mitigation Action Plan Construction and Operation of a Proposed Cellulosic Biorefinery, BlueFire Fulton Renewable Energy, LLC, Fulton, Mississippi March 10, 2010...

  18. Corrective Actions Process

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Community, Environment » Environmental Stewardship » Environmental Cleanup » Corrective Actions Corrective Actions Process The general process for evaluating and remediating potential release sites is called the corrective action process. Contact Environmental Communication & Public Involvement P.O. Box 1663 MS M996 Los Alamos, NM 87545 (505) 667-0216 Email Corrective actions The Laboratory's corrective actions process refers to the way in which the Laboratory investigates, stabilizes,

  19. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  20. DOE Initiates Enforcement Actions Against 4 Showerhead Manufacturers

    Office of Environmental Management (EM)

    (Notice of Proposed Civil Penalty and Requests for Test Data Issued) | Department of Energy Initiates Enforcement Actions Against 4 Showerhead Manufacturers (Notice of Proposed Civil Penalty and Requests for Test Data Issued) DOE Initiates Enforcement Actions Against 4 Showerhead Manufacturers (Notice of Proposed Civil Penalty and Requests for Test Data Issued) March 7, 2010 - 3:41pm Addthis The Office of General Counsel has issued a Notice of Proposed Civil Penalty to Hudson-Reed Limited

  1. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  2. 2014 Joint Action Workshop

    Broader source: Energy.gov [DOE]

    The Joint Action Workshop is an annual event for joint action agencies and their members to meet informally and discuss emerging policy, regulatory, and power supply issues, and other topics...

  3. Mitigation Action Plan

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mitigation Action Plan FutureGen 2.0 Project DOE/EIS-0460 U.S. Department of Energy National Energy Technology Laboratory March 2014 DOE/EIS-0460 FUTUREGEN 2.0 PROJECT MITIGATION ACTION PLAN INTENTIONALLY LEFT BLANK DOE/EIS-0460 FUTUREGEN 2.0 PROJECT MITIGATION ACTION PLAN TABLE OF CONTENTS Introduction ................................................................................................................................................... 1 Purpose

  4. Mitigation Action Plan

    Office of Environmental Management (EM)

    Mitigation Action Plan FutureGen 2.0 Project DOE/EIS-0460 U.S. Department of Energy National Energy Technology Laboratory March 2014 DOE/EIS-0460 FUTUREGEN 2.0 PROJECT MITIGATION ACTION PLAN INTENTIONALLY LEFT BLANK DOE/EIS-0460 FUTUREGEN 2.0 PROJECT MITIGATION ACTION PLAN TABLE OF CONTENTS Introduction ................................................................................................................................................... 1 Purpose

  5. Guidance on the Consideration of Past Actions in Cumulative Effects

    Office of Environmental Management (EM)

    Analysis | Department of Energy on the Consideration of Past Actions in Cumulative Effects Analysis Guidance on the Consideration of Past Actions in Cumulative Effects Analysis In this Memorandum, the Council on Environmental Quality provides guidance on the extent to which agencies of the Federal government are required to analyze the environmental effects of past actions when they describe the cumulative environmental effect of a proposed action. PDF icon Guidance on the Consideration of

  6. EA-1212: Mitigation Action Plan | Department of Energy

    Office of Environmental Management (EM)

    12: Mitigation Action Plan EA-1212: Mitigation Action Plan Lease of Land for the Development of a Research Park at Los Alamos National Laboratory, Los Alamos, NM This Mitigation Action Plan identifies commitments made in the Finding of No Significant Impact to mitigate potential effects from constructing and operating a proposed research park on land leased from Los Alamos National Laboratory and establishes an action plan to carry out each commitment. PDF icon EA-1212-MAP-1997.pdf More

  7. Analysis of the GaInP/GaAs/1-eV/Ge Cell and Related Structures for Terrestrial Concentrator Application: Preprint

    SciTech Connect (OSTI)

    Friedman, D. J.; Kurtz, S. R.; Geisz, J. F.

    2002-05-01

    This conference paper describes the analysis of the potential of GaInP/GaAs/1-eV/Ge four-junction solar cell to improve on the efficiency of the state-of-the-art GaInP/GaAs/Ge benchmark. We emphasize three factors: (1) The newly proposed terrestrial concentrator spectrum has a lower ratio of red to blue light than does the old AM1.5 direct standard spectrum. (2) Standard two-layer antireflection coatings do not provide near-zero reflectance over the full spectral range of interest for these devices. (3) GaInNAs junctions used to date for the 1-eV junction have quantum efficiencies less than {approx}75%. These factors all limit the device current, adversely affecting the four-junction efficiency. We discuss strategies for ameliorating this problem, including going to alternate structures such as a GaInP/GaAs/0.9-eV three-junction device.

  8. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  9. Action Item Review and Status

    Office of Environmental Management (EM)

    Board Action Items Action Item Resolution Action Item Strategic Planning Initiative Optimization Study Resolution Presentation by S. Schneider (HLW System Integrated Project...

  10. Development of 1.25 eV InGaAsN for triple junction solar cells

    SciTech Connect (OSTI)

    LI,N.Y.; SHARPS,P.R.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Development of next generation high efficiency space monolithic multifunction solar cells will involve the development of new materials lattice matched to GaAs. One promising material is 1.05 eV InGaAsN, to be used in a four junction GaInP{sub 2}/GaAs/InGaAsN/Ge device. The AMO theoretical efficiency of such a device is 38--42%. Development of the 1.05 eV InGaAsN material for photovoltaic applications, however, has been difficult. Low electron mobilities and short minority carrier lifetimes have resulted in short minority carrier diffusion lengths. Increasing the nitrogen incorporation decreases the minority carrier lifetime. The authors are looking at a more modest proposal, developing 1.25 eV InGaAsN for a triple junction GaInP{sub 2}/InGaAsN/Ge device. The AMO theoretical efficiency of this device is 30--34%. Less nitrogen and indium are required to lower the bandgap to 1.25 eV and maintain the lattice matching to GaAs. Hence, development and optimization of the 1.25 eV material for photovoltaic devices should be easier than that for the 1.05 eV material.

  11. Call for Proposal Submissions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Call for Proposal Submissions The Request for Proposals for the JLF User Program for experiments in Calendar Year 2016 has closed. The Request for Proposals for experiments in Calendar Year 2017 will open in the summer of 2016

  12. Past Calls for Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposals Past Calls for Proposals 2015 Call for Proposals to use NERSC Resources The 2015 Call for Proposals to use NERSC Resources opens August 13, 2014, and closes September 22, 2014. Read More » 2014 Call for Proposals to use NERSC Resources The Office of Science of the U. S. Department of Energy (DOE) solicits proposals for 2014 allocations of high performance computing resources at the National Energy Research Scientific Computing Center (NERSC) at Lawrence Berkeley National Laboratory.

  13. LANSCE | User Resources | Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposals LANSCE accepts proposals for the Lujan Neutron Scattering Center, Proton Radiography (pRad) and the Weapons Neutron Research Facility (WNR). Calls for proposals are typically issued twice a year, for each run cycle of the accelerator. Deadlines will be posted. Lujan Center pRad WNR Lujan Center: Nuclear and Materials Research FY16 Call for Proposalsis closed. Proposal Submission Read the Lujan Center call for proposals. Deadline: July 24 , 2015, 5:00 p.m. (MDT) Unclassified Proposal

  14. 2015 Electricity Form Proposals

    U.S. Energy Information Administration (EIA) Indexed Site

    Proposed Changes to Electricity and Renewable (Photovoltaic) Survey Forms November 19, 2015 In early 2016 the U.S. Energy Information Administration (EIA) will formally propose ...

  15. Trident Call for Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Call for Proposals Trident Call for Proposals Enabling world-class science in high-energy density physics and fundamental laser-matter interactions Contact Operations Team...

  16. Status of Corrective Actions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    WIPP AIB Report » Status of Corrective Actions Status of Corrective Actions at LANL Department of Energy Issues Accident Investigation Board (AIB) Report on February 14 Incident at the Waste Isolation Pilot Project in Carlsbad, New Mexico April 12, 2012 x x Contact Communication Office (505) 667-7000 Corrective Actions Undertaken by Los Alamos National Laboratory though a collaborative effort led by the Associate Director for Environmental Safety and Health (ADESH), the Associate Director for

  17. Action Plan - Hanford Site

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Agreement Action Plan Tri-Party Agreement The Agreement Action Plan Announcements List of Approved Changes TPA Project Manager's Lists Modifications for Public Comment Data Management MP-14 WIDS Information Hanford Site Waste Management Units Report Hanford Public Involvement Plan Administrative Record (AR) Related Links Action Plan Email Email Page | Print Print Page |Text Increase Font Size Decrease Font Size Executive Summary 1.0 Introduction 1.1 Purpose 1.2 Regulatory Authorities 1.3

  18. On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Gao, Feng; Chen, Di; Tuller, Harry L.; Thompson, Carl V.; Palacios, Toms

    2014-03-28

    Water-related redox couples in ambient air are identified as an important source of the surface trapping states, dynamic on-resistance, and drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). Through in-situ X-ray photoelectron spectroscopy (XPS), direct signature of the water-related specieshydroxyl groups (OH) was found at the AlGaN surface at room temperature. It was also found that these species, as well as the current collapse, can be thermally removed above 200?C in vacuum conditions. An electron trapping mechanism based on the H{sub 2}O/H{sub 2} and H{sub 2}O/O{sub 2} redox couples is proposed to explain the 0.5?eV energy level commonly attributed to the surface trapping states. Finally, the role of silicon nitride passivation in successfully removing current collapse in these devices is explained by blocking the water molecules away from the AlGaN surface.

  19. Protective Actions and Reentry

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    1997-08-21

    This volume defines appropriate protective actions and reentry of a site following an emergency. Canceled by DOE G 151.1-4.

  20. ARM - Status and Actions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Status and Actions Campaign Details News Field Participants Resources Status and Actions ARM Data Discovery Browse Data Status and Actions For up-to-date campaign action, please see News 28.JUN.07 Requests for all field participants: Please place your preliminary data on the CHAPS ftp site no later than December. Connor Flynn has worked with ARM colleagues to give us a password protected FTP site. If you haven't received the instructions already from Connor regarding how to access the site,

  1. Notes and Action Items

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Rick Kendall, Tom Kitchens, Horst Simon SubCommittee on Visualization and Graphics Software Responsibility: JN Leboeuf, Judy Giarrusso, Steve Jardin, and Steve Lau Actions:...

  2. Portsmouth Remedial Actions Documents

    Broader source: Energy.gov [DOE]

    Remedial Action documents for the Portsmouth Site Process Buildings and Complex Facilities Decontamination and Decommissioning Decision Portsmouth Site Site-Wide Waste Disposition Decision

  3. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  4. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  5. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  6. Trident Call for Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Trident Call for Proposals Trident Call for Proposals Enabling world-class science in high-energy density physics and fundamental laser-matter interactions Contact Operations Team Leader Randy Johnson (505) 665-5089 Email Trident Governing Board Contact Ray Leeper (505) 667-3653 Email Call for Proposals 2015-2016 The Trident Laser Facility is accepting proposals for experiments to be performed at the facility during the period October 2015 through September 2016. All proposals submitted are

  7. PROPOSAL PREPARATION INSTRUCTIONS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Contract No. DE-AC27-08RV14800 Modification No. A015 PROPOSAL PREPARATION INSTRUCTIONS 1. INTRODUCTION This document contains instructions to the contractor for the preparation of a proposal in response to the modification of the contract which defines work that will be funded by and performed under the provisions of the American Recovery and Reinvestment Act (Recovery Act). The contractor shall provide a written proposal consisting of a Technical Proposal and a Cost and Fee Proposal. The

  8. OFFEROR'S PROPOSAL LETTER

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    RFP OPL (Rev. 4, 8/4/15) RFP Offeror's Proposal Letter Initials: Page 1 of 4 OFFEROR'S PROPOSAL LETTER In response to the Solicitation, also known as request for proposal (RFP), referenced below, and in accordance with the accompanying solicitation provisions, any addenda thereto and the terms and conditions of the proposed subcontract, the Offeror identified below (hereinafter referred to as OFFEROR) proposes to furnish all plant, labor, technical and professional services, supervision,

  9. NETL: Unsolicited Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Unsolicited Proposals The Department of Energy's (DOE's) central point of receipt for all Unsolicited Proposals is the National Energy Technology Laboratory (NETL) as outlined in the link below which includes all DOE Program Research Areas. The "Guide for the Submission of Unsolicited Proposals" provides more information on the unsolicited proposal process. DOE encourages organizations and individuals to submit self-generated, unsolicited proposals that are relevant to DOE's research

  10. WREP Mitigation Action Plan

    Broader source: Energy.gov (indexed) [DOE]

    Electrical Interconnection of the Whistling Ridge Energy Project 1 Mitigation Action Plan June 2015 Mitigation Action Plan for the Whistling Ridge Energy Project Measure Implementation Timeline Implementation Responsibility Earth (geology, soils, topography, and geologic hazards) Prior to Project construction, confirm subsurface soil and rock types and strength properties through a detailed geotechnical investigation of the specific locations of all wind Project elements, including wind

  11. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  12. Call for Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposals | FY2016 pRad: Call for Proposals Proposal Submission Deadline: 5:00 pm (MST) Wednesday, March 16, 2016. PAC Review: week of April 4th, 2016. Call for Proposals: Proton Radiography FY17 The Los Alamos Neutron Science Center (LANSCE) is issuing a Call for Proposals for experiments for the Proton Radiography Facility (pRad) during Fiscal Year 2017. Proposals for FY18 experiments that will not be ready to be performed FY17 will be considered. The proton radiography facility uses 800 MeV

  13. LANSCE | User Resources | Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposals | FY2017 pRad: Call for Proposals Proposal Submission Deadline: 5:00 pm (MST) Wednesday, March 16, 2016. PAC Review: week of April 4th, 2016. Call for Proposals: Proton Radiography FY17 The Los Alamos Neutron Science Center (LANSCE) is issuing a Call for Proposals for experiments for the Proton Radiography Facility (pRad) during Fiscal Year 2017. Proposals for FY18 experiments that will not be ready to be performed FY17 will be considered. The proton radiography facility uses 800 MeV

  14. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  15. US SoAtl GA Site Consumption

    U.S. Energy Information Administration (EIA) Indexed Site

    GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per

  16. 2014 ALCC Proposals Due

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALCC Proposals Due February 3, 2014 2014 DOE ALCC Proposals Due February 3 December 23, 2013 by Francesca Verdier (0 Comments) DOE's 2014 call for its ASCR Leadership Computing...

  17. Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN

    Office of Scientific and Technical Information (OSTI)

    HEMTs. (Conference) | SciTech Connect Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Citation Details In-Document Search Title: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Abstract not provided. Authors: Biedermann, Laura Butler ; Kaplar, Robert James ; Marinella, Matthew ; Zavadil, Kevin Robert ; Atcitty, Stanley ; Sun, Min ; Palacios, Tomas Publication Date: 2012-10-01 OSTI Identifier: 1111316 Report Number(s):

  18. Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN

    Office of Scientific and Technical Information (OSTI)

    HEMTs. (Conference) | SciTech Connect Conference: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Citation Details In-Document Search Title: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Abstract not provided. Authors: DasGupta, Sandeepan ; Biedermann, Laura Butler ; Kaplar, Robert ; Marinella, Matthew ; Zavadil, Kevin Robert ; Atcitty, Stanley ; Sun, Min ; Palacios, Tomas Publication Date: 2013-02-01 OSTI Identifier:

  19. Submit CSES Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Submit Proposals Submit CSES Proposals High quality, cutting-edge science in the areas of astrophysics, space physics, solid planetary geoscience, and climate science. Contact Director Reiner Friedel (505) 665-1936 Email Professional Staff Assistant Georgia D. Sanchez (505) 665-0855 Email FY16 Deadline to submit CSES Emerging Ideas proposals: Friday, March 11, 2016 FY16 Deadline to submit CSES Student and Postdoctoral Fellow proposals: Monday, April 4, 2016 The Center for Space and Earth Science

  20. ARM - Funded Research Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Proposals Science Research Themes Research Highlights Journal Articles Collaborations Atmospheric System Research (ASR) Earth System Modeling Regional &...

  1. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  2. Notices ACTION: Notice.

    Office of Environmental Management (EM)

    8867 Federal Register Vol. 80, No. 215 Friday, November 6, 2015 Notices ACTION: Notice. SUMMARY: This notice announces EPA's receipt of an application 91163-EUP-R from Texas...

  3. Notices ACTION: Notice.

    Energy Savers [EERE]

    867 Federal Register Vol. 80, No. 215 Friday, November 6, 2015 Notices ACTION: Notice. SUMMARY: This notice announces EPA's receipt of an application 91163-EUP-R from Texas...

  4. Status of Corrective Actions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Report on February 14 Incident at the Waste Isolation Pilot Project in Carlsbad, New Mexico April 12, 2012 x x Contact Communication Office (505) 667-7000 Corrective Actions...

  5. Full Proposal Instructions_2015

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Full Proposal Instructions NIF Facility Time Proposal Please prepare your full proposal according to the following instructions. Append biographical sketches(CVs) for the Principal Investigator (PI) and no more than 5 additional key team members to the end of this proposal. Submission Deadlines: Save the entire document as a single file in pdf format, and submit via the Web submission tool before 11:59 p.m. on September 1, 2015, PDT. I. COVER SHEET: (1 page) 1) Please provide the proposal title,

  6. LANSCE | User Resources | Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposals dotline Lujan Center: Nuclear and Materials Research FY16 Call for Proposals Proposal Submission: https://www.lanl.gov/orgs/lansce/ Lujan Center Call for Proposals is Open. Deadline: July 24, 2015 at 5:00 pm (MDT). lansce.lanl.gov lansce.lanl.gov/lujan The Los Alamos Neutron Science Center (LANSCE) is issuing a Call for Proposals for experiments to be run at the Lujan Center's moderated neutron source during Fiscal Year 2016 (October 5, 2015, - February 6, 2016). Three nuclear science

  7. Corrective Action Program Guide

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    2006-03-02

    This Guide was developed to assist the Department of Energy (DOE) organizations and contractors in the development, implementation, and followup of corrective action programs utilizing the feedback and improvement core safety function within DOE's Integrated Safety Management System. This Guide outlines some of the basic principles, concepts, and lessons learned that DOE managers and contractors might consider when implementing corrective action programs based on their specific needs. Canceled by DOE G 414.1-2B. Does not cancel other directives.

  8. Climate Action Champion: Technical

    Office of Environmental Management (EM)

    Learn more at energy.gov/betterbuildings Climate Action Champion: Technical Assistance to the City of Seattle Planning for Seattle's new Building Energy Code Overview The City of Seattle, identified as a Climate Action Champion (CAC) by the Department of Energy (DOE), is revising its 2012 Energy Code, already one of the most progressive in the country. Seattle has made a pledge to be carbon neutral by 2050. Seattle received technical assistance from the Pacific Northwest National Laboratory in

  9. EA-1941: Mitigation Action Plan (MAP) | Department of Energy

    Energy Savers [EERE]

    41: Mitigation Action Plan (MAP) EA-1941: Mitigation Action Plan (MAP) BPA issued a Mitigation Action Plan for avoiding or reducing the impacts of proposed improvements to 13 miles of access roads for its existing 115-kV Boyer-Tillamook No. 1 Transmission Line. PDF icon EA-1941-MAP-2014.pdf More Documents & Publications EA-1941: Finding of No Significant Impact (FONSI) EA-1941: Final Environmental Assessment EA-1941

  10. EA-1440-S1: Mitigation Action Plan | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Mitigation Action Plan EA-1440-S1: Mitigation Action Plan National Renewable Energy Laboratory's South Table Mountain Complex, Golden, Colorado ThIs Mitigation Action Plan implements the mitigation measures associated with the potential environmental impact of a DOE proposal that consists of three site development projects at the National Renewable Energy Laboratory's (NREL) South Table Mountain (STM) site at Golden, Colorado: Construction of the Research Support Facilities (RSF), a new office

  11. EA-1704: Mitigation Action Plan | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    04: Mitigation Action Plan EA-1704: Mitigation Action Plan Construction and Operation of a Proposed Cellulosic Biorefinery, BlueFire Fulton Renewable Energy, LLC, Fulton, Mississippi This Mitigation Action Plan specifies the methods for implementing mitigation measures that address the potential environmental impacts associated with the construction and operation of a lignocellulosic ethanol refinery, BlueFire Fulton Renewable Energy, LLC in Fulton, Mississippi. PDF icon EA-1704-MAP-2010.pdf

  12. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  13. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A.; Fujioka, H.

    2014-05-05

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  14. General User Proposals (GUPs)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposals (GUPs) Print General Users are granted beam time through a peer review proposal process. They may use beamlines and endstations provided by the ALS or the Participating Research Team (PRT) that operates the beamline. Before Submitting a Proposal Review the ALS Beamlines Directory to learn about the research capabilities of individual beamlines at the ALS. Contact the beamline scientist or the local contact listed in the tables, for additional information about the beamline. You can

  15. General User Proposals (GUPs)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General User Proposals (GUPs) Print General Users are granted beam time through a peer review proposal process. They may use beamlines and endstations provided by the ALS or the Participating Research Team (PRT) that operates the beamline. Before Submitting a Proposal Review the ALS Beamlines Directory to learn about the research capabilities of individual beamlines at the ALS. Contact the beamline scientist or the local contact listed in the tables, for additional information about the

  16. Requests for Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Requests for Proposals Requests for Proposals World-class experts and capabilities countering all aspects of explosive threats, and aiming predominantly at enhanced detection capabilities. What LACED cannot do LACED is prohibited by US Federal Law from responding to RFPs on its own or as a co-respondent. Organizations responding to a RFP can reference a "unique" capability or service available at LACED in an RFP proposal response. Such a reference should specify that LACED

  17. Categories for CSES Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposal Categories Categories for CSES Proposals High quality, cutting-edge science in the areas of astrophysics, space physics, solid planetary geoscience, and climate science. Contact Director Reiner Friedel (505) 665-1936 Email Professional Staff Assistant Georgia D. Sanchez (505) 665-0855 Email CSES offers several program elements. New to CSES is a more flexible proposal schedule - not all program elements are offered in each call, and some program elements have calls more than once per

  18. General User Proposals (GUPs)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    operates the beamline. Before Submitting a Proposal Review the ALS Beamlines Directory to learn about the research capabilities of individual beamlines at the ALS. Contact the...

  19. General User Proposal Scores

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposal Scores Print Scoring Proposals are scored on a scale of 1 to 5, with 1 being the best score and 5 the worst. Reviewers are requested to use the following ranking schema: Must do High Priority Medium Priority Low priority Don't do Beam time is assigned based on each proposal's score in relation to all other proposals for a given beamline. For beamlines where beam time requests exceed available beam time, a cutoff score is assigned after which no beam time is allocated. Individual Beam

  20. Categories for IGPPS Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on an independent, revolutionary scientific idea that has Los Alamos National Laboratory mission relevance. The proposed work must not be related to the programmatic research...

  1. LANSCE | User Resources | Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    User Resources dotline 2015 WNR Call for Proposals Proposal Submission WNR call for proposals opens April 6, 2015. Deadline: Friday, May 15, 2015, 5:00 pm (MDT). PAC: June 4 and 5, 2015. lansce.lanl.gov wnr.lanl.gov The Los Alamos Neutron Science Center (LANSCE) is issuing a Call for Proposals for the WNR facility for run cycle September - December, 2015. The Neutron and Nuclear Science Research Facility (WNR) provides neutron and proton beams, as well as detector arrays for basic, applied,

  2. Proposals and Design Reports

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposals and Design Reports Proposals and Design Reports Proposal (1/2/04) Proposal Addendum (29/3/04) Physics Case and Detector Technology Report (12/04) Technical Design Report (7/06) Reviews DOE CD-4 DOE 2008 DOE CD-3b CD-3b Readiness DOE CD-1/2/3a CD-2/3a Readiness CD-1 Readiness PAC Report (4/05) Approvals FNAL PAC Approval: April 15, 2004 DOE Critical Decision 1,2,3a (Performance Baseline, Construction Start) Approval: March 30, 2007 DOE Critical Decision 4 (Project Completion) Approval:

  3. ES H action plan

    SciTech Connect (OSTI)

    Not Available

    1991-01-01

    This document contains planned actions to correct the deficiencies identified in the Pre-Tiger Team Self-Assessment (PTTSA), January 1991, of Sandia National Laboratories (SNL -- Albuquerque, New Mexico; Tonopah, Nevada; and Kauai, Hawaii). The Self-Assessment was conducted by a Self-Assessment Working Group consisting of 19 department managers, with support from Environment, Safety, and Health (ES H) professionals, from October through December 1990. Findings from other past audits, dating back to 1985, were reviewed and compared with the PTTSA findings to determine if additional findings, key findings, or root causes were warranted. The resulting ES H Action Plan and individual planned actions were prepared by the ES H Action Plan Project Group with assistance from the Program owners/authors during February and March 1991. The plan was reviewed by SNL Management in April 1991. This document serves as a planning instrument for the Laboratories to aid in the scoping and sizing of activities related to ES H compliance for the coming five years. It will be modified as required to ensure a workload/funding balance and to address the findings resulting from the Tiger Team assessment at SNL, Albuquerque. The process of producing this document has served well to prepare SNL, Albuquerque, for the coming task of producing the required post-Tiger Team action plan document. 8 tabs.

  4. GaNPAs Solar Cells that Can Be Lattice-Matched to Silicon

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; McMahon, W. E.; Ptak, A. J.; Kibbler, A. E.; Olson, J. M.; Kurtz, S.; Kramer, C.; Young, M.; Duda, A.; Reedy, R. C.; Keyes, B. M.; Dippo, P.; Metzger, W. K.

    2003-05-01

    III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We have proposed the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct bandgaps in the range of 1.5 to 2.0 eV. We have demonstrated the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and shown improvements in material quality by reducing carbon and hydrogen impurities through optimization of growth conditions. We have achieved quantum efficiencies (QE) in these cells as high as 60% and PL lifetimes as high as 3.0 ns.

  5. Building Actionable Climate Action Plans | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Building Actionable Climate Action Plans Building Actionable Climate Action Plans Transcript PDF icon Presentation More Documents & Publications Partnering with Utilities Part 2: Advanced Topics for Local Governments in Creating Successful Partnerships with Utilities to Deliver Energy Efficiency Programs Effective O&M Policy in Public Buildings Procuring and Implementing Solar Projects on Public Buildings: How to Avoid Common Pitfalls

  6. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; Worschech, L.; Gru?tzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  7. Proposed Rules Federal Register

    Energy Savers [EERE]

    7963 Vol. 79, No. 128 Thursday, July 3, 2014 DEPARTMENT OF ENERGY 10 CFR Part 429 [Docket No. EERE-2013-BT-NOC-0039] Appliance Standards and Rulemaking Federal Advisory Committee: Cancellation of Open Meetings AGENCY: Office of Energy Efficiency and Renewable Energy, Department of Energy. ACTION: Notice of cancellation of open meetings. SUMMARY: The Department of Energy (DOE) announces the cancellation of open meetings for the Commercial and Industrial Pumps Working Group of the Appliance

  8. Proposed Rules Federal Register

    Energy Savers [EERE]

    8019 Vol. 80, No. 127 Thursday, July 2, 2015 DEPARTMENT OF ENERGY 5 CFR Chapter XXII 10 CFR Chapters II, III, and X Reducing Regulatory Burden AGENCY: Office of the General Counsel, Department of Energy. ACTION: Request for information (RFI). SUMMARY: As part of its implementation of Executive Order 13563, ''Improving Regulation and Regulatory Review,'' issued by the President on January 18, 2011, the Department of Energy (Department or DOE) is seeking comments and information from interested

  9. Proposed Rules Federal Register

    Energy Savers [EERE]

    75798 Vol. 76, No. 233 Monday, December 5, 2011 DEPARTMENT OF ENERGY 5 CFR Chapter XXIII 10 CFR Chapters II, III, X Reducing Regulatory Burden AGENCY: Office of the General Counsel, Department of Energy. ACTION: Request for information. SUMMARY: As part of its implementation of Executive Order 13563, ''Improving Regulation and Regulatory Review,'' issued by the President on January 18, 2011, the Department of Energy (Department or DOE) is seeking comments and information from interested parties

  10. Proposed Rules Federal Register

    Energy Savers [EERE]

    28518 Vol. 77, No. 94 Tuesday, May 15, 2012 DEPARTMENT OF ENERGY 5 CFR Chapter XXII 10 CFR Chapters II, III, X Reducing Regulatory Burden AGENCY: Office of the General Counsel, Department of Energy. ACTION: Request for information. SUMMARY: As part of its implementation of Executive Order 13563, ''Improving Regulation and Regulatory Review,'' issued by the President on January 18, 2011, the Department of Energy (Department or DOE) is seeking comments and information from interested parties to

  11. Proposed Rules Federal Register

    Energy Savers [EERE]

    31548 Vol. 77, No. 103 Tuesday, May 29, 2012 DEPARTMENT OF ENERGY 5 CFR Chapter XXII 10 CFR Chapters II, III, X Reducing Regulatory Burden AGENCY: Office of the General Counsel, Department of Energy. ACTION: Notice of extension of public comment period. SUMMARY: This notice announces that the period for submitting comments on the Department of Energy's (DOE) request for information (RFI) issued as part of its implementation of Executive Order 13563, ''Improving Regulation and Regulatory

  12. Oxidation of ultrathin GaSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  13. Oxidation of ultrathin GaSe

    SciTech Connect (OSTI)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  14. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J. Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y.

    2014-09-08

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  15. EA-1891: Mitigation Action Plan | Department of Energy

    Energy Savers [EERE]

    891: Mitigation Action Plan EA-1891: Mitigation Action Plan Alvey-Fairview Transmission Line Rebuild Project, Oregon This Mitigation Action Plan (MAP) is part of the Finding of No Significant Impact for the Alvey-Fairview Transmission Line Rebuild Project. The project would rebuild the aging 97.5-mile-long 230- kilovolt (kV) Alvey-Fairview transmission line in Lane, Douglas, and Coos counties, Oregon. This MAP is for the Proposed Action and includes all of the integral elements and commitments

  16. EIS-0195: Remedial Actions at Operable Unit 4, Fernald Environmental Management Project, Fernald, Ohio

    Broader source: Energy.gov [DOE]

    This EIS evaluates the potential environmental impacts of a proposal to conduct remedial action at Operable Unit 4 at the Fernald Environmental Management Project.

  17. Approved Program Proposals (AP)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Approved Program Proposals (AP) Print An Approved Program (AP) enables an investigator, or a group of investigators, to receive a set percentage of beam time to partner with ALS staff both to carry out an extended research program and to develop new tools and/or new research protocols that will be made available to the general user population. APs are arranged for a period of up to three years. AP Proposal Submission Deadlines January 15 July 15 AP Proposal Submission Guidelines Step 1: Contact

  18. Approved Program Proposals (AP)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Approved Program Proposals (AP) Print An Approved Program (AP) enables an investigator, or a group of investigators, to receive a set percentage of beam time to partner with ALS staff both to carry out an extended research program and to develop new tools and/or new research protocols that will be made available to the general user population. APs are arranged for a period of up to three years. AP Proposal Submission Deadlines January 15 July 15 AP Proposal Submission Guidelines Step 1: Contact

  19. Approved Program Proposals (AP)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Approved Program Proposals (AP) Print An Approved Program (AP) enables an investigator, or a group of investigators, to receive a set percentage of beam time to partner with ALS staff both to carry out an extended research program and to develop new tools and/or new research protocols that will be made available to the general user population. APs are arranged for a period of up to three years. AP Proposal Submission Deadlines January 15 July 15 AP Proposal Submission Guidelines Step 1: Contact

  20. Approved Program Proposals (AP)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Approved Program Proposals (AP) Print An Approved Program (AP) enables an investigator, or a group of investigators, to receive a set percentage of beam time to partner with ALS staff both to carry out an extended research program and to develop new tools and/or new research protocols that will be made available to the general user population. APs are arranged for a period of up to three years. AP Proposal Submission Deadlines January 15 July 15 AP Proposal Submission Guidelines Step 1: Contact

  1. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  2. Approved Program Proposals (AP)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    its recommendations to the ALS Division Director. A letter will be sent to the PIs of successful proposals specifying the percentage of beam time and the period of the AP. The...

  3. Proposed Rules IV. Conclusion

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Vol. 81, No. 44 Monday, March 7, 2016 Proposed Rules IV. Conclusion For the ... Dated at Rockville, Maryland, this 29th day of February, 2016. For the Nuclear Regulatory ...

  4. ARM - AAF Proposal Process

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    address aerosol-cloud interactions (i.e., studies of aerosol indirect effect, CCN, IN, etc.) or aerosol-radiation interactions. AAF is expecting to award five to six proposals with...

  5. Approved Program Proposals (AP)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    be sent out for external review and will also be evaluated by the Proposal Study Panels (PSP), which will provide its evaluation to the Scientific Advisory Committee (SAC). The SAC...

  6. Proposal Study Panels

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposal Study Panels Print Two Proposal Study Panels (PSPs) exist at the ALS: one for the general sciences and one for structural biology. The role of the PSPs is desribed in User Policy. Note: Users are urged NOT to contact any members of the panels directly. Current members of the general sciences PSP, as of February 2014, are Masa Fukuto, Brookhaven National Laboratory Carol Hirschmugl, University of Wisconsin, Milwaukee Peter Johnson (chair), Brookhaven National Laboratory Apurva Mehta,

  7. Proposal Study Panels

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposal Study Panels Print Two Proposal Study Panels (PSPs) exist at the ALS: one for the general sciences and one for structural biology. The role of the PSPs is desribed in User Policy. Note: Users are urged NOT to contact any members of the panels directly. Current members of the general sciences PSP, as of February 2014, are Masa Fukuto, Brookhaven National Laboratory Carol Hirschmugl, University of Wisconsin, Milwaukee Peter Johnson (chair), Brookhaven National Laboratory Apurva Mehta,

  8. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash Biswas, Dhrubes

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  9. Princeton Plasma Physics Lab - General Atomics (GA)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http:www.pppl.govnode1132

  10. EA-1628: Construction and Operation of a Proposed Lignocellulosic Biorefinery, Emmetsburg, Iowa

    Broader source: Energy.gov [DOE]

    This EA evaluated the potential environmental impacts of aDOEproposal to provide financial assistance (the Proposed Action) to POET Project LIBERTY, LLC (POET) for the construction and operation...

  11. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  12. DOE Withdraws Proposed Rulemaking (Test Procedure) and Proposed...

    Office of Environmental Management (EM)

    Withdraws Proposed Rulemaking (Test Procedure) and Proposed Coverage Determination (Energy Conservation Standard) for Set-Top Boxes DOE Withdraws Proposed Rulemaking (Test ...

  13. Accelerated aging of GaAs concentrator solar cells

    SciTech Connect (OSTI)

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  14. Remedial Action Performed

    Office of Legacy Management (LM)

    Aliquippa Forge Site in Aliquippa, Pennsylvania Department of Energy Former Sites Restoration Division Oak Ridge Operations Office November 1996 CERTIFICATION DOCKE.~ FOR THE REMEDIAL ACTION PERFORMED AT THE ALIQUIPPA FORGE SITE IN ALIQUIPPA, PENNSYLVANIA NOVEMBER 1996 Prepared for . UNITED STATES DEPARTMENT OF ENERGY Oak Ridge Operations Office Under Contract No. DE-AC05-9 1 OR2 1949 Bechtel National, Inc. Oak Ridge, Tennessee Bechtel Job No. 14501 CONTENTS Page FIGURES v . . . . . . . . . . .

  15. Remedial Action Performed

    Office of Legacy Management (LM)

    Baker and Williams Warehouses Site in New York, New York, 7997 - 7993 Department of Energy Former Sites Restoration Division Oak Ridge Operations Office November 7 995 CERTIFICATION DOCKET FOR THE REMEDIAL ACTION PERFORMED AT THE BAKER AND WILLIAMS WAREHOUSES SITE IN NEW YORK, NEW YORK, 1991-1993 NOVEMBER 1995 Prepared for United States Department of Energy Oak Ridge Operations Office Under Contract No. DE-AC05-910R21949 BY Bechtel National, Inc. Oak Ridge, Tennessee Bechtel Job No. 14501 __

  16. Remedial Action Performed

    Office of Legacy Management (LM)

    Alba Craft Laboratory and Vicinity Properties Site in Oxford, Ohio C Department of Energy Former Sites Restoration Division Oak Ridge Operations Office January 1997 $$@T Op% 3 @!B . i~d!l Ab Printed on recycled/recyclable paper. CERTIFICATION DOCKET FOR THE REMEDIAL ACTION PERFORMED AT THE FORMER ALBA CRAFT LABORATORY AND VICINITY PROPERTIES SITE IN OXFORD, OHIO JANUARY 1997 Prepared for United States Department of Energy Oak Ridge Operations Office Under Contract No. DE-AC0591 OR2 1949 Bechtel

  17. Remedial Action Performed

    Office of Legacy Management (LM)

    ' at the C. H. Schnoor Site, Springdale, Pennsylvania, in 1 994 Department of Energy Former Sites Restoration Division Oak Ridge Operations Office November 1996 CERTIFICATION DOCKET FOR THE REMEDIAL ACTION PERFORMED AT THE C. H. SCHNOOR SITE SPRINGDALE, PENNSYLVANIA, IN 1994 NOVEMBER 1996 prep&ed for United States Department of ~nergy Oak Ridge Operations Off= r Under Contract No. DE-AC05-910R21949 Bechtel National, Inc. Oak Ridge, Tennessee Bechtel Job No. '14501 CONTENTS FIGURES . . . . .

  18. February 2007 Standards Actions

    Office of Environmental Management (EM)

    DOE Technical Standards Posted in RevCom for TSP 1 DOE Technical Standards in Reaffirmation 1 DOE Technical Standards Change Notices 1 DOE Technical Standards Published1 Non-Government Standards Actions 2 American National Standards Institute (ANSI) 2 American Society of Mechanical Engineers (ASME) 2 ASTM International 2 American Nuclear Society (ANS) 2 National Fire Protection Association (NFPA) 2 Publication Staff Roster 2 DOE Technical Standards Program Document Status 01-26-2007 Activity

  19. Interim Action Determination

    Office of Environmental Management (EM)

    Interim Action Determination Processing of Plutonium Materials from the DOE Standard 3013 Surveillance Program in H-Canyon at the Savannah River Site The Department of Energy (DOE) is preparing the Surplus Plutonium Disposition Supplemental Environmental Impact Statement (SPD SEIS, DOE/EIS-0283-S2). DOE is evaluating alternatives for disposition of non-pit plutonium that is surplus to the national security needs of the United States. Although the Deputy Secretary of Energy approved Critical

  20. Proposed environmental remediation at Argonne National Laboratory, Argonne, Illinois

    SciTech Connect (OSTI)

    1997-05-01

    The Department of Energy (DOE) has prepared an Environmental Assessment evaluating proposed environmental remediation activity at Argonne National Laboratory-East (ANL-E), Argonne, Illinois. The environmental remediation work would (1) reduce, eliminate, or prevent the release of contaminants from a number of Resource Conservation and Recovery Act (RCRA) Solid Waste Management Units (SWMUs) and two radiologically contaminated sites located in areas contiguous with SWMUs, and (2) decrease the potential for exposure of the public, ANL-E employees, and wildlife to such contaminants. The actions proposed for SWMUs are required to comply with the RCRA corrective action process and corrective action requirements of the Illinois Environmental Protection Agency; the actions proposed are also required to reduce the potential for continued contaminant release. Based on the analysis in the EA, the DOE has determined that the proposed action does not constitute a major federal action significantly affecting the quality of the human environment within the meaning of the National Environmental Policy Act of 1969 (NEPA). Therefore, the preparation of an Environmental Impact Statement is not required.

  1. EA-1993: Proposed High Explosive Science & Engineering Project, Pantex

    Office of Environmental Management (EM)

    Plant, Amarillo, Texas | Department of Energy 3: Proposed High Explosive Science & Engineering Project, Pantex Plant, Amarillo, Texas EA-1993: Proposed High Explosive Science & Engineering Project, Pantex Plant, Amarillo, Texas SUMMARY The proposed action would be to design, construct, and operate a High Explosive Science and Engineering (HE S&E) facility that would support NNSA's mission at the Pantex Plant. This would include developing and sustaining high quality scientific

  2. 2013 Electricity Form Proposals

    Gasoline and Diesel Fuel Update (EIA)

    Electricity Survey Form Changes in 2013 The U.S. Energy Information Administration (EIA) proposed changes to its electricity data collection in 2013. These changes involve three forms: Form EIA-861, "Annual Electric Power Industry Report" The addition of a new form, the Form EIA-861S, "Annual Electric Power Industry Report (Short Form)" Form EIA-923, "Power Plant Operations Report." The proposals were initially announced to the public via a Federal Register Notice

  3. Semi-automated lab-on-a-chip for dispensing GA-68 radiotracers

    SciTech Connect (OSTI)

    Weinberg, Irving

    2014-03-12

    We solved a technical problem that is hindering American progress in molecular medicine, and restricting US citizens from receiving optimal diagnostic care. Specifically, the project deals with a mother/daughter generator of positron-emitting radiotracers (Ge-68/Ga-68). These generator systems are approved in Europe but cannot be used in the USA, because of safety issues related to possible breakthrough of long-lived Ge-68 (mother) atoms. Europeans have demonstrated abilities of Ga-68-labeled radiotracers to image cancer foci with high sensitivity and specificity, and to use such methods to effectively plan therapy.The USA Food and Drug Administration (FDA) and Nuclear Regulatory Commission (NRC) have taken the position that every patient administration of Ga-68 should be preceded by an assay demonstrated that Ge-68 breakthrough is within acceptable limits. Breakthrough of parent elements is a sensitive subject at the FDA, as evidenced by the recent recall of Rb-82 generators due to inadvertent administrations of Sr-82. Commercially, there is no acceptable rapid method for assaying breakthrough of Ge-68 prior to each human administration. The gamma emissions of daughter Ga-68 have higher energies than the parent Ge-68, so that the shielding assays typically employed for Mo-99/Tc-99m generators cannot be applied to Ga-68 generators. The half-life of Ga-68 is 68 minutes, so that the standard 10-half-life delay (used to assess breakthrough in Sr-82/Rb-82 generators) cannot be applied to Ga-68 generators. As a result of the aforementioned regulatory requirements, Ga-68 generators are sold in the USA for animal use only.The American clinical communitys inability to utilize Ga-68 generators impairs abilities to treat patients domestically, and puts the USA at a disadvantage in developing exportable products. The proposed DOE project aimed to take advantage of recent technological advances developed for lab-on-a-chip (LOC) applications. Based on our experiences constructing such devices, the proposed microfluidics-based approach could provide cost-effective validation of breakthrough compliance in minutes.

  4. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5??10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  5. Corrective Action Plan for Corrective Action Unit 417: Central Nevada Test Area Surface, Nevada

    SciTech Connect (OSTI)

    K. Campbell

    2000-04-01

    This Corrective Action Plan provides methods for implementing the approved corrective action alternative as provided in the Corrective Action Decision Document for the Central Nevada Test Area (CNTA), Corrective Action Unit (CAU) 417 (DOE/NV, 1999). The CNTA is located in the Hot Creek Valley in Nye County, Nevada, approximately 137 kilometers (85 miles) northeast of Tonopah, Nevada. The CNTA consists of three separate land withdrawal areas commonly referred to as UC-1, UC-3, and UC-4, all of which are accessible to the public. CAU 417 consists of 34 Corrective Action Sites (CASs). Results of the investigation activities completed in 1998 are presented in Appendix D of the Corrective Action Decision Document (DOE/NV, 1999). According to the results, the only Constituent of Concern at the CNTA is total petroleum hydrocarbons (TPH). Of the 34 CASs, corrective action was proposed for 16 sites in 13 CASs. In fiscal year 1999, a Phase I Work Plan was prepared for the construction of a cover on the UC-4 Mud Pit C to gather information on cover constructibility and to perform site management activities. With Nevada Division of Environmental Protection concurrence, the Phase I field activities began in August 1999. A multi-layered cover using a Geosynthetic Clay Liner as an infiltration barrier was constructed over the UC-4 Mud Pit. Some TPH impacted material was relocated, concrete monuments were installed at nine sites, signs warning of site conditions were posted at seven sites, and subsidence markers were installed on the UC-4 Mud Pit C cover. Results from the field activities indicated that the UC-4 Mud Pit C cover design was constructable and could be used at the UC-1 Central Mud Pit (CMP). However, because of the size of the UC-1 CMP this design would be extremely costly. An alternative cover design, a vegetated cover, is proposed for the UC-1 CMP.

  6. Proposed Drill Sites

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Lane, Michael

    Proposed drill sites for intermediate depth temperature gradient holes and/or deep resource confirmation wells. Temperature gradient contours based on shallow TG program and faults interpreted from seismic reflection survey are shown, as are two faults interpreted by seismic contractor Optim but not by Oski Energy, LLC.

  7. Proposed Drill Sites

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Lane, Michael

    2013-06-28

    Proposed drill sites for intermediate depth temperature gradient holes and/or deep resource confirmation wells. Temperature gradient contours based on shallow TG program and faults interpreted from seismic reflection survey are shown, as are two faults interpreted by seismic contractor Optim but not by Oski Energy, LLC.

  8. Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)

    SciTech Connect (OSTI)

    Bremner, S. P.; Ban, K.-Y.; Faleev, N. N.; Honsberg, C. B.; Smith, D. J.

    2013-09-14

    We describe InAs quantum dot creation in InAs/GaAsSb barrier structures grown on GaAs (001) wafers by molecular beam epitaxy. The structures consist of 20-nm-thick GaAsSb barrier layers with Sb content of 8%, 13%, 15%, 16%, and 37% enclosing 2 monolayers of self-assembled InAs quantum dots. Transmission electron microscopy and X-ray diffraction results indicate the onset of relaxation of the GaAsSb layers at around 15% Sb content with intersected 60 dislocation semi-loops, and edge segments created within the volume of the epitaxial structures. 38% relaxation of initial elastic stress is seen for 37% Sb content, accompanied by the creation of a dense net of dislocations. The degradation of In surface migration by these dislocation trenches is so severe that quantum dot formation is completely suppressed. The results highlight the importance of understanding defect formation during stress relaxation for quantum dot structures particularly those with larger numbers of InAs quantum-dot layers, such as those proposed for realizing an intermediate band material.

  9. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  10. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  11. 3RS action plan

    SciTech Connect (OSTI)

    Not Available

    1990-01-01

    The goal of the Solid Waste Interim Steering Committee (SWISC) process is to develop a long-term waste management system for the Greater Toronto Area (GTA), to be in place by 1996, which is environmentally, socially, economically and technically sound. This background report is being released to the public and member Regional Councils to facilitate input to the SWISC planning process. The report documents current reduction, reuse and recycling initiatives in the GTA, identifies opportunities for coordination and collaboration among the GTA communities, and develops an action plan for improving the effectiveness of the reduction, reuse and recycling efforts within the GTA.

  12. Notices ACTION: Notice.

    Energy Savers [EERE]

    867 Federal Register / Vol. 80, No. 215 / Friday, November 6, 2015 / Notices ACTION: Notice. SUMMARY: This notice announces EPA's receipt of an application 91163-EUP-R from Texas Corn Producers Board requesting an experimental use permit (EUP) for the Aspergillus flavus strains TC16F, TC35C, TC38B, and TC46G. The Agency has determined that the permit may be of regional and national significance. Therefore, because of the potential significance, EPA is seeking comments on this application. DATES:

  13. RCRA corrective action and closure

    SciTech Connect (OSTI)

    Not Available

    1995-02-01

    This information brief explains how RCRA corrective action and closure processes affect one another. It examines the similarities and differences between corrective action and closure, regulators` interests in RCRA facilities undergoing closure, and how the need to perform corrective action affects the closure of DOE`s permitted facilities and interim status facilities.

  14. Proposed Rules IV. Conclusion

    Energy Savers [EERE]

    686 Federal Register / Vol. 81, No. 44 / Monday, March 7, 2016 / Proposed Rules IV. Conclusion For the reasons cited in this document, the NRC is denying PRM- 50-106. The NRC is denying this petition because the current regulations already address environmental qualification in both mild and design basis event conditions of electrical equipment located both inside and outside of the containment building that is important to safety, and the petitioners did not provide significant new or

  15. EA-1951: Finding of No Significant Impact and Mitigation Action Plan |

    Energy Savers [EERE]

    Department of Energy 1951: Finding of No Significant Impact and Mitigation Action Plan EA-1951: Finding of No Significant Impact and Mitigation Action Plan Midway-Moxee Rebuild and Midway-Grandview Upgrade Transmission Line Project; Benton and Yakima Counties, Washington Bonneville Power Administration issued a Finding of No Significant Impact and Mitigation Action Plan for the proposed rebuilding of the 34-mile Midway-Moxee transmission line and the proposed rebuilding and upgrading of the

  16. EIS-0425: Record of Decision and Mitigation Action Plan | Department of

    Office of Environmental Management (EM)

    Energy 5: Record of Decision and Mitigation Action Plan EIS-0425: Record of Decision and Mitigation Action Plan Bonneville Power Administration Record of Decision and Mitigation Action Plan for the Mid-Columbia Restoration Project BPA decided to implement the Proposed Action of the Mid-Columbia Coho Restoration Program as described in the Mid-Columbia Coho Restoration Program Final Environmental Impact Statement (EIS) (DOE/EIS-0425, March 2012). BPA will fund the construction, operation, and

  17. Sodium dichromate expedited response action assessment

    SciTech Connect (OSTI)

    Not Available

    1993-09-01

    The US Environmental Protection Agency (EPA) and Washington Department of Ecology (Ecology) recommended that the US Department of Energy (DOE) perform an expedited response action (ERA) for the Sodium Dichromate Barrel Disposal Landfill. The ERA lead regulatory agency is Ecology and EPA is the support agency. The ERA was categorized as non-time-critical, which required preparation of an engineering evaluation and cost analysis (EE/CA). The EE/CA was included in the ERA proposal. The EE/CA is a rapid, focused evaluation of available technologies using specific screening factors to assess feasibility, appropriateness, and cost. The ERA goal is to reduce the potential for any contaminant migration from the landfill to the soil column, groundwater, and Columbia River. Since the Sodium Dichromate Barrel Disposal Landfill is the only waste site within the operable unit, the removal action may be the final remediation of the 100-IU-4 Operable Unit. This ERA process started in March 1992. The ERA proposal went through a parallel review process with Westinghouse Hanford Company (WHC), DOE Richland Operations (RL), EPA, Ecology, and a 30-day public comment period. Ecology and EPA issued an Action Agreement Memorandum in March 1993 (Appendix A). The memorandum directed excavation of all anomalies and disposal of the collected materials at the Hanford Site Central Landfill. Primary field activities were completed by the end of April 1993. Final waste disposal of a minor quantity of hazardous waste was completed in July 1993.

  18. GA-AL-SC | Department of Energy

    Energy Savers [EERE]

    GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E

  19. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  20. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  1. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  2. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmoreto higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.less

  3. Guam Energy Action Plan

    SciTech Connect (OSTI)

    Conrad, M. D.; Ness, J. E.

    2013-07-01

    Describes the four near-term strategies selected by the Guam Energy Task Force during action planning workshops conducted in March 2013, and outlines the steps being taken to implement those strategies. Each strategy addresses one of the energy sectors identified in the earlier Guam strategic energy plan as being an essential component of diversifying Guam's fuel sources and reducing fossil energy consumption 20% by 2020. The four energy strategies selected are: (1) expanding public outreach on energy efficiency and conservation, (2) establishing a demand-side management revolving loan program, (3) exploring waste-to-energy options, and (4) influencing the transportation sector via anti-idling legislation, vehicle registration fees, and electric vehicles.

  4. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

    SciTech Connect (OSTI)

    Li, Yi; Liu, Bin E-mail: rzhang@nju.edu.cn; Zhang, Rong E-mail: rzhang@nju.edu.cn; Xie, Zili; Zhuang, Zhe; Dai, JiangPing; Tao, Tao; Zhi, Ting; Zhang, Guogang; Chen, Peng; Ren, Fangfang; Zhao, Hong; Zheng, Youdou

    2015-04-21

    Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620?nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%53% as compared to that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.

  5. Emergencies and Emergency Actions | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and Emergency Actions Emergencies and Emergency Actions Selected documents on the topic of Emergencies and Emergency Actions under NEPA. May 12, 2010 Memorandum for Heads of...

  6. Climate Action Tracker | Open Energy Information

    Open Energy Info (EERE)

    References: Climate Action Tracker1 "This "Climate Action Tracker" is an independent science-based assessment, which tracks the emission commitments and actions of countries. The...

  7. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect (OSTI)

    Lekhal, K.; Damilano, B. De Mierry, P.; Venngus, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570600?nm) emitting In{sub x}Ga{sub 1?x}N/Al{sub y}Ga{sub 1?y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1?x}N QWs by the Al{sub y}Ga{sub 1?y}N layers, respectively.

  8. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  9. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  10. EA-1595: Mitigation Action Plan | Department of Energy

    Office of Environmental Management (EM)

    Mitigation Action Plan EA-1595: Mitigation Action Plan Davis-Mead 230-kV Transmission Line Reconductor Project Western Area Power Administration proposes to reconductor approximately 61 miles of 230-kV transmission line from the Davis Substation at Davis Dam near Bullhead City, Arizona, to the Mead Substation near Boulder City in southern Nevada. PDF icon Mitigation Action Plan for the Davis-Mead 230-kV Transmission Line Reconductor Project, DOE/EA-1595 (November 2007) More Documents &

  11. Proposed solar two project Barstow, California

    SciTech Connect (OSTI)

    Not Available

    1994-01-01

    This Environmental Assessment (EA) evaluates the environmental consequences of the proposed conversion and operation of the existing Solar One Facility in Daggett, Ca, near the city of Barstow, to a nitrate salt based heat transfer system, Solar Two. The EA also addresses the alternatives of different solar conversion technologies and alternative sites and discusses a no action alternative. A primary objective of the Solar Two Project is to demonstrate the technical and economic feasibility of a solar central receiver power plant using molten salt as the thermal storage and transport fluid medium. If successful, the information gathered from the Solar Two Project could be used to design larger commercial solar power plants.

  12. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgl Okur; Akdemir, Hande Gnay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  13. Environmental assessment of remedial action at the Maybell uranium mill tailings site near Maybell, Colorado: Revision 2

    SciTech Connect (OSTI)

    Not Available

    1994-11-01

    The purpose of this environmental assessment (EA) is to evaluate the environmental impacts resulting from remedial action at the Maybell uranium mill tailings site near Maybell, Colorado. A biological assessment and a floodplain/wetlands assessment are included as part of this EA. This report and attachments describe the proposed action, affected environment, and environmental impacts associated with the proposed remedial action, including impacts to threatened and endangered species listed or proposed for listing by the US Fish and Wildlife Service (FWS).

  14. Environmental assessment of remedial action at the Maybell Uranium Mill Tailings Site near Maybell, Colorado. Revision 1

    SciTech Connect (OSTI)

    Not Available

    1994-04-01

    The purpose of this environmental assessment (EA) is to evaluate the environmental impacts resulting from remedial action at the Maybell uranium mill tailings site near Maybell, Colorado. A biological assessment (Attachment 1) and a floodplain/wetlands attachments describe the proposed action, affected environment, and environmental impacts associated with the proposed remedial action, including impacts to threatened and endangered species listed or proposed for listing by the US Fish and Wildlife Service (FWS).

  15. Proposed Remedial Action Plan: Proposed Plan for Remedial Action at the Quarry Residuals Operable Unit of the Weldon Spring Site. DOE/OR/21548-724

    Office of Legacy Management (LM)

  16. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8??10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  17. Proposal Types | Advanced Photon Source

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    from anywhere in the world to use the APS through a competitive access process. CAT Member and Staff Proposals Proposals from members and staff of Collaborative Access...

  18. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  19. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  20. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  1. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

    SciTech Connect (OSTI)

    Yang, Seong-Uk; Jung, Woo-Shik; Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho; Park, Jin-Hong

    2014-02-01

    Highlights: We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. InAs and InGaAs formed by this process decrease an electron barrier height. Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, JV measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

  2. First-principles studies on molecular beam epitaxy growth of GaAs1-xBix

    SciTech Connect (OSTI)

    Luo, Guangfu; Yang, Shujiang; Li, Jincheng; Arjmand, Mehrdad; Szlufarska, Izabela; Brown, April S.; Kuech, Thomas F.; Morgan, Dane

    2015-07-14

    We investigate the molecular beam epitaxy (MBE) growth of GaAs1-xBix film using density functional theory with spin-orbit coupling to understand the growth of this film, especially the mechanisms of Bi incorporation. We study the stable adsorption structures and kinetics of the incident molecules (As? molecule, Ga atom, Bi atom, and Bi? molecule) on the (2 x 1)-Gasub||Bi surface and a proposed q(1 x 1)-Gasub||AsAs surface has a quasi-(1 x 1) As layer above the Ga-terminated GaAs substrate and a randomly oriented As dimer layer on top. We obtain the desorption and diffusion barriers of the adsorbed molecules and also the reaction barriers of three key processes related to Bi evolution, namely, Bi incorporation, As/Bi exchange, and Bi clustering. The results help explain the experimentally observed dependence of Bi incorporation on the As/Ga ratio and growth temperature. Furthermore, we find that As? exchange with Bi of the (2 x 1)-Gasub||Bi surface is a key step controlling the kinetics of the Bi incorporation. Finally, we explore two possible methods to enhance the Bi incorporation, namely, replacing the MBE growth mode from codeposition of all fluxes with a sequential deposition of fluxes and applying asymmetric in-plane strain to the substrate.

  3. http://www.oha.doe.gov/regs/Proposed708.htm

    Broader source: Energy.gov (indexed) [DOE]

    [6450.01P] DEPARTMENT OF ENERGY 10 CFR PART 708 [RIN 1901-AA78] Criteria and Procedures for DOE Contractor Employee Protection Program AGENCY: Department of Energy ACTION: Notice of proposed rulemaking SUMMARY: The Department of Energy (DOE) proposes amendments for its contractor employee protection program which provides recourse to DOE contractor employees who believe they have been retaliated against for activities such as a disclosure of information regarding management of environmental,

  4. Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum...

    Office of Scientific and Technical Information (OSTI)

    Room-temperature mid-infrared "M"-type GaAsSbInGaAs quantum well lasers on InP substrate Citation Details In-Document Search Title: Room-temperature mid-infrared "M"-type GaAsSb...

  5. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  6. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  7. Evaluation Criteria for PDIL Proposal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Criteria for PDIL Proposal The selection/decision criteria used by the NCPV Business Development Team are the following: 1. Quality and Relevance of the Proposed Technical Plan (30%) * Technology impact with industry and likelihood of success. Demonstrated benefits of success to both the proposer and NREL to meet the DOE SunShot goals. * Proposed task descriptions and time line. Clear demonstration of entrance and exit strategies in the PDIL. * Extent to which the Proposer and NREL can rapidly

  8. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  9. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  10. Wong's equations and the small x effective action in QCD (Journal Article)

    Office of Scientific and Technical Information (OSTI)

    | SciTech Connect Wong's equations and the small x effective action in QCD Citation Details In-Document Search Title: Wong's equations and the small x effective action in QCD We propose a new form for the small x effective action in QCD. This form of the effective action is motivated by Wong's equations for classical, colored particles in non-Abelian background fields. We show that the BFKL equation, which sums leading logarithms in x, is efficiently reproduced with this form of the action.

  11. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  12. Enforcement actions: Significant actions resolved individual actions. Semiannual progress report, January 1996--June 1996

    SciTech Connect (OSTI)

    1996-08-01

    This document summarizes significant enforcement actions that have been resolved during the period of January-June 1996. The report includes copies of Orders and Notices of Violations sent by the Nuclear Regulatory Commission to individuals with respect to the enforcement actions.

  13. DOE Withdraws Proposed Rulemaking (Test Procedure) and Proposed Coverage

    Office of Environmental Management (EM)

    Determination (Energy Conservation Standard) for Set-Top Boxes | Department of Energy Withdraws Proposed Rulemaking (Test Procedure) and Proposed Coverage Determination (Energy Conservation Standard) for Set-Top Boxes DOE Withdraws Proposed Rulemaking (Test Procedure) and Proposed Coverage Determination (Energy Conservation Standard) for Set-Top Boxes December 23, 2013 - 12:00am Addthis The Department of Energy (DOE) has issued pre-publication Federal Register notices withdrawing the notice

  14. Environmental assessment of remedial action at the Maybell uranium mill tailings site near Maybell, Colorado

    SciTech Connect (OSTI)

    Not Available

    1993-09-01

    The purpose of this environmental assessment (EA) is to evaluate the environmental impacts resulting from remedial action at the Maybell uranium mill tailings site near Maybell, Colorado. A biological assessment (Attachment 1) and a floodplain/wetlands assessment (Assessment 2) are included as part of this EA. The following sections and attachments describe the proposed action, affected environment, and environmental impacts associated with the proposed remedial action, including impacts to threatened and endangered species listed or proposed for listing by the US Fish and Wildlife Service.

  15. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  16. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  17. GaInNAs Structures Grown by MBE for High-Efficiency Solar Cells: Final Report; 25 June 1999--24 August 2002

    SciTech Connect (OSTI)

    Tu, C. W.

    2003-08-01

    The focus of this work is to improve the quality of GaInNAs by advanced thin-film growth techniques, such as digital-alloy growth techniques and migration-enhanced epitaxy (MEE). The other focus is to further investigate the properties of such materials, which are potentially beneficial for high-efficiency, multijunction solar cells. 400-nm-thick strain-compensated Ga0.92In0.08As/GaN0.03As0.97 short-period superlattices (SPSLs) are grown lattice-matched to GaAs substrates. The photoluminescence (PL) intensity of digital alloys is 3 times higher than that of random alloys at room temperature, and the improvement is even greater at low temperature, by a factor of about 12. The room-temperature PL intensity of the GaInNAs quantum well grown by the strained InAs/GaN0.023As SPSL growth mode is higher by a factor 5 as compare to the continuous growth mode. The SPSL growth method allows for independent adjustment of the In-to-Ga ratio without group III competition. MEE reduces the low-energy tail of PL, and PL peaks become more intense and sharper. The twin peaks photoluminescence of GaNAs grown on GaAs was observed at room temperature. The peaks splitting increase with increase in nitrogen alloy content. The strain-induced splitting of light-hole and heavy-hole bands of tensile-strained GaNAs is proposed as an explanation of such behavior.

  18. RCRA corrective action: Work plans

    SciTech Connect (OSTI)

    Not Available

    1995-02-01

    This Information Brief describes the work plans that owners/operators may have to prepare in conjunction with the performance of corrective action for compliance with RCRA guidelines. In general, the more complicated the performance of corrective action appears from the remedial investigation and other analyses, the more likely it is that the regulator will impose work plan requirements. In any case, most owner/operators will prepare work plans in conjunction with the performance of corrective action processes as a matter of best engineering management practices.

  19. Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

    SciTech Connect (OSTI)

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-09-27

    The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A toward [110] were characterized and discussed by using deep level transient spectroscopy (DLTS) and on the basis of temperature dependence of the junction capacitances (C{sub J}). In one hand, GaAsN films grown on GaAs 311B and GaAs 10A showed n-type and p-type conductivities, respectively although the similar and simultaneous growth conditions. This result is indeed in contrast to the common known effect of N concentration on the type of conductivity, since the surface 311B showed a significant improvement in the incorporation of N. Furthermore, the temperature dependence of C{sub J} has shown that GaAs 311B limits the formation of N-H defects. In the other hand, the energy states in the forbidden gap of GaAsN were obtained. Six electron traps, E1 to E6, were observed in the DLTS spectrum of GaAsN grown on GaAs 311B, with apparent activation energies of 0.02, 0.14, 0.16, 0.33, 0.48, and 0.74 eV below the bottom edge of the conduction band, respectively. In addition, four hole traps, H1 to H4, were observed in the DLTS spectrum of GaAsN grown on GaAs 10A, with energy depths of 0.13, 0.20, 0.39, and 0.52 eV above the valence band maximum of the alloy, respectively. Hence, the surface morphology of the GaAs substrate was found to play a key factor role in clarifying the electrical properties of GaAsN grown by CBE.

  20. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  1. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  2. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  3. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli; Wang, Jianfeng; Ren, Guoqiang; Xu, Ke

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  4. ARM - Submitting Proposals : Guideline Overview

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govField CampaignsSubmitting Proposals : Guideline Overview Guidelines Overview Annual Facility Call Small Field Campaigns Review Criteria Expectations for Principal Investigators Forms Propose a Campaign Instrument Support Request (ISR) Form (Word, 89KB) Documentation Steps for Submitting Field Campaign Data and Metadata Field Campaign Guidelines (PDF, 574KB) Submitting Proposals : Guideline Overview Proposals are welcome from all members of the scientific community for conducting field

  5. Unsolicited Proposals | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Unsolicited Proposals Unsolicited Proposals The Department of Energy's (DOE's) central point of receipt for all Unsolicited Proposals is the National Energy Technology Laboratory (NETL) which includes all DOE Program Research Areas. http://www.netl.doe.gov/business/usp/unsol.html

  6. Method for triggering an action

    DOE Patents [OSTI]

    Hall, David R.; Bartholomew, David B.; Johnson, Monte L.; Moon, Justin; Koehler, Roger O.

    2006-10-17

    A method for triggering an action of at least one downhole device on a downhole network integrated into a downhole tool string synchronized to an event comprises determining latency, sending a latency adjusted signal, and performing the action. The latency is determined between a control device and the at least one downhole device. The latency adjusted signal for triggering an action is sent to the downhole device. The action is performed downhole synchronized to the event. A preferred method for determining latency comprises the steps: a control device sends a first signal to the downhole device; after receiving the signal, the downhole device sends a response signal to the control device; and the control device analyzes the time from sending the signal to receiving the response signal.

  7. ICDF Complex Remedial Action Report

    SciTech Connect (OSTI)

    W. M. Heileson

    2007-09-26

    This Idaho CERCLA Disposal Facility (ICDF) Remedial Action Report has been prepared in accordance with the requirements of Section 6.2 of the INEEL CERCLA Disposal Facility Remedial Action Work Plan. The agency prefinal inspection of the ICDF Staging, Storage, Sizing, and Treatment Facility (SSSTF) was completed in June of 2005. Accordingly, this report has been developed to describe the construction activities completed at the ICDF along with a description of any modifications to the design originally approved for the facility. In addition, this report provides a summary of the major documents prepared for the design and construction of the ICDF, a discussion of relevant requirements and remedial action objectives, the total costs associated with the development and operation of the facility to date, and identification of necessary changes to the Agency-approved INEEL CERCLA Disposal Facility Remedial Action Work Plan and the ICDF Complex Operations and Maintenance Plan.

  8. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Young, M. P.; Woodhead, C. S.; Roberts, J.; Noori, Y. J.; Noble, M. T.; Krier, A.; Hayne, M.; Young, R. J.; Smakman, E. P.; Koenraad, P. M.

    2014-11-15

    We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 ?eV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.

  9. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. ); Koploy, M.A. )

    1992-01-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  10. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J.; Koploy, M.A.

    1992-08-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  11. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Hfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  12. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  13. Webinar for Tribes, States, Local Governments, and Territories on the Clean Power Plan Supplemental Proposal

    Broader source: Energy.gov [DOE]

    On Tuesday, October 28, 2014, EPA issued an action related to the proposed Clean Power Plan to cut carbon pollution from power plants. EPA is following through on its commitment made in June to...

  14. Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire

    SciTech Connect (OSTI)

    Du, Chunhua; Ma, Ziguang; Zhou, Junming; Lu, Taiping; Jiang, Yang; Jia, Haiqiang; Liu, Wuming; Chen, Hong

    2014-04-14

    The asymmetric dual-wavelength (green/blue) coupled InGaN/GaN multiple quantum wells were proposed to modulate the green emission intensity. Electroluminescent measurements demonstrate the conspicuous increment of the green light intensity by decreasing the coupled barrier thickness. This was partly attributed to capture of more carriers when holes tunnel across the thinner barrier from the blue quantum wells, as a hole reservoir, to the green quantum wells. While lower effective barrier height of the blue quantum wells benefits improved hole transportation from p-GaN to the active region. Efficiency droop of the green quantum wells was partially alleviated due to the enhanced injection efficiency of holes.

  15. EA-1931: Finding of No Significant Impact and Mitigation Action Plan |

    Energy Savers [EERE]

    Department of Energy 1: Finding of No Significant Impact and Mitigation Action Plan EA-1931: Finding of No Significant Impact and Mitigation Action Plan Keeler to Tillamook Transmission Line Rebuild Project, Washington and Tillamook Counties, Oregon Bonneville Power Administration issued a finding of no significant impact and a mitigation action plan for the proposed rebuild of the Keeler-Forest Grove and Forest Grove-Tillamook 115-kilovolt (kV) transmission lines between the cities of

  16. EA-1946: Finding of No Significant Impact and Mitigation Action Plan |

    Energy Savers [EERE]

    Department of Energy 6: Finding of No Significant Impact and Mitigation Action Plan EA-1946: Finding of No Significant Impact and Mitigation Action Plan Salem-Albany Transmission Line Rebuild Project; Polk, Benton, Marion, and Linn Counties, Oregon Bonneville Power Administration issued a finding of no significant impact and mitigation action plan for the proposed rebuild of the 24-mile Salem-Albany No. 1 and 28-mile Salem-Albany No. 2 transmission lines between Salem and Albany, Oregon. PDF

  17. FINDING OF MD SIGNIFICANT IMPACT FORMERLY UTILIZED HED/AEC SITES REMEDIAL ACTION PROGRAM:

    Office of Legacy Management (LM)

    FINDING OF MD SIGNIFICANT IMPACT FORMERLY UTILIZED HED/AEC SITES REMEDIAL ACTION PROGRAM: BAY0 CANYONS, NEW MEXICO Under the Formerly Utilized Sites Remedial Action Program (FUSRAP), the U.S. Department of Energy (DOE) has proposed to carry out rcmedfrl action at a site located in Bayo Canyon, Los Alamos County, New Mexico. Although the site as partially decontaminated and decommissioned in the 196Os, there remain above-background amounts of radionuclides. DOE has determined that strontium-90 in

  18. Distributed bragg reflector using AIGaN/GaN

    DOE Patents [OSTI]

    Waldrip, Karen E.; Lee, Stephen R.; Han, Jung

    2004-08-10

    A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

  19. Structural and optical properties of (Ag,Cu)(In,Ga)Se{sub 2} polycrystalline thin film alloys

    SciTech Connect (OSTI)

    Boyle, J. H.; Shafarman, W. N.; Birkmire, R. W.; McCandless, B. E.

    2014-06-14

    The structural and optical properties of pentenary alloy (Ag,Cu)(In,Ga)Se{sub 2} polycrystalline thin films were characterized over the entire compositional range at a fixed (Cu?+?Ag)/(In?+?Ga) ratio. Films deposited at 550?C on bare and molybdenum coated soda-lime glass by elemental co-evaporation in a single-stage process with constant incident fluxes exhibit single phase chalcopyrite structure, corresponding to 122 spacegroup (I-42d) over the entire compositional space. Unit cell refinement of the diffraction patterns show that increasing Ag substitution for Cu, the refined a{sub o} lattice constant, (Ag,Cu)-Se bond length, and anion displacement increase in accordance with the theoretical model proposed by Jaffe, Wei, and Zunger. However, the refined c{sub o} lattice constant and (In,Ga)-Se bond length deviated from theoretical expectations for films with mid-range Ag and Ga compositions and are attributed to influences from crystallographic bond chain ordering or cation electronegativity. The optical band gap, derived from transmission and reflection measurements, widened with increasing Ag and Ga content, due to influences from anion displacement and cation electronegativity, as expected from theoretical considerations for pseudo-binary chalcopyrite compounds.

  20. First-principles studies on molecular beam epitaxy growth of GaAs1-xBix

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Luo, Guangfu; Yang, Shujiang; Li, Jincheng; Arjmand, Mehrdad; Szlufarska, Izabela; Brown, April S.; Kuech, Thomas F.; Morgan, Dane

    2015-07-14

    We investigate the molecular beam epitaxy (MBE) growth of GaAs1-xBix film using density functional theory with spin-orbit coupling to understand the growth of this film, especially the mechanisms of Bi incorporation. We study the stable adsorption structures and kinetics of the incident molecules (As? molecule, Ga atom, Bi atom, and Bi? molecule) on the (2 x 1)-Gasub||Bi surface and a proposed q(1 x 1)-Gasub||AsAs surface has a quasi-(1 x 1) As layer above the Ga-terminated GaAs substrate and a randomly oriented As dimer layer on top. We obtain the desorption and diffusion barriers of the adsorbed molecules and also themorereaction barriers of three key processes related to Bi evolution, namely, Bi incorporation, As/Bi exchange, and Bi clustering. The results help explain the experimentally observed dependence of Bi incorporation on the As/Ga ratio and growth temperature. Furthermore, we find that As? exchange with Bi of the (2 x 1)-Gasub||Bi surface is a key step controlling the kinetics of the Bi incorporation. Finally, we explore two possible methods to enhance the Bi incorporation, namely, replacing the MBE growth mode from codeposition of all fluxes with a sequential deposition of fluxes and applying asymmetric in-plane strain to the substrate.less

  1. Enforcement actions: Significant actions resolved individuals actions. Semiannual progress report, July--December 1996

    SciTech Connect (OSTI)

    1997-04-01

    This compilation summarizes significant enforcement actions that have been resolved during the period (July - December 1996) and includes copies of Orders and Notices of Violation sent by the Nuclear Regulatory Commission to individuals with respect to-these enforcement actions. It is anticipated that the information in this publication will be widely disseminated to managers and employees engaged in activities licensed by the NRC. The Commission believes this information may be useful to licensees in making employment decisions.

  2. Isotropic Hall effect and ''freeze-in'' of carriers in the InGaAs self-assembled quantum wires

    SciTech Connect (OSTI)

    Kunets, Vas. P.; Prosandeev, S.; Mazur, Yu. I.; Ware, M. E.; Teodoro, M. D.; Dorogan, V. G.; Lytvyn, P. M.; Salamo, G. J.

    2011-10-15

    Using molecular beam epitaxy, we prepared an anisotropic media consisting of InGaAs quantum wires epitaxially grown on GaAs (311)A. Anisotropy is observed in the lateral conductivity and photoluminescence polarization. However, an isotropic Hall effect is observed in the same samples. We show that the Hall effect in this anisotropic heterostructure remains isotropic regardless of the change of the doping in GaAs barriers and regardless of the InGaAs coverage, whereas the conductivity anisotropy experiences a strong change under these actions. In addition, we observed an anomalous increase in carrier density, ''freeze-in,'' at low temperatures. In order to explain this, we generalized the theory of Look [D. C. Look, Phys. Rev B 42, 3578 (1990)] by considering the low field magneto-transport in anisotropic media. This theory confirms that the Hall constant remains isotropic in anisotropic semiconductor heterostructures, agreeing with our experiment and explains the anomalous behavior of carriers as a result of multi-band conductivity.

  3. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  4. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  5. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  6. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  7. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  8. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    SciTech Connect (OSTI)

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  9. Part 3: Removal Action | Department of Energy

    Office of Environmental Management (EM)

    3: Removal Action Part 3: Removal Action Question: When may removal actions be initiated? Answer: Removal actions may be initiated when DOE determines that the action will prevent, minimize, stabilize, or eliminate a risk to health or the environment. The NCP specifies that the determination that a risk to health or the environment is appropriate for removal action should be based on: actual or potential exposure of humans, animals, or the food chain the presence of contained hazardous

  10. Photoluminescence from GaAs nanodisks fabricated by using combination...

    Office of Scientific and Technical Information (OSTI)

    GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth Citation Details In-Document Search Title:...

  11. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19 }m{sup −2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  12. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  13. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  14. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  15. Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well

    Office of Scientific and Technical Information (OSTI)

    lasers on InP substrate (Journal Article) | SciTech Connect Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well lasers on InP substrate Citation Details In-Document Search Title: Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well lasers on InP substrate We have demonstrated experimentally the InP-based "M"-type GaAsSb/InGaAs quantum-well (QW) laser lasing at 2.41 μm at room temperature by optical pumping. The threshold power density

  16. Proposal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    20.4 38.3 events) is observed at lower energies (E < 475 MeV), where the first error is statistical and the second error is systematic. The lack of a significant excess at...

  17. Energy Action Month October 2013 Poster

    Broader source: Energy.gov [DOE]

    Poster for Federal Energy Management Program (FEMP) features slogan "Take Action Now: Empower a Secure Energy Future" for October 2013 Energy Action Month.

  18. California Climate Action Registry | Open Energy Information

    Open Energy Info (EERE)

    Climate Action Registry Jump to: navigation, search Name: California Climate Action Registry Place: Los Angeles, California Zip: 90014 Product: Los Angeles-based NPO which develops...

  19. Climate Action Plan | OpenEI Community

    Open Energy Info (EERE)

    actions that the administration believes will mitigate the environmental and economic costs of climate change. Obama's six Climate Action Initiatives: 1. Phasing out Fossil Fuels...

  20. Environmental Management Headquarters Corrective Action Plan...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    II Environmental Management Headquarters Corrective Action Plan - Radiological Release Phase II The purpose ofthis Corrective Action Plan (CAP) is to specify U.S. Department of ...

  1. Climate Protection Action Fund | Open Energy Information

    Open Energy Info (EERE)

    Repower America Retrieved from "http:en.openei.orgwindex.php?titleClimateProtectionActionFund&oldid767417" Categories: Organizations Political Action Committees Policy...

  2. Environmental Management Headquarters Corrective Action Plan...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Truck Fire Environmental Management Headquarters Corrective Action Plan - Truck Fire The purpose of this Corrective Action Plan (CAP) is to specify U.S. Department of Energy (DOE)...

  3. Environmental Management Headquarters Corrective Action Plan...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    I Environmental Management Headquarters Corrective Action Plan - Radiological Release Phase I The purpose of this Corrective Action Plan (CAP) is to specify U.S. Department of...

  4. Energy Agency Coordinators for Energy Action Month

    Broader source: Energy.gov [DOE]

    Agency coordinators serve as primary Federal agency points of contact for Energy Action Month. Contact them if you have questions about implementing an Energy Action Month campaign.

  5. Renewable Energy Action Project | Open Energy Information

    Open Energy Info (EERE)

    Action Project Jump to: navigation, search Name: Renewable Energy Action Project Place: San Francisco, California Zip: 94107 Product: REAP is a San Francisco-based non-profit...

  6. Presidential Climate Action Project | Open Energy Information

    Open Energy Info (EERE)

    Page Edit with form History Presidential Climate Action Project Jump to: navigation, search Name: Presidential Climate Action Project Place: Denver, Colorado Zip: 80217-3364...

  7. Inter Action Corp | Open Energy Information

    Open Energy Info (EERE)

    Action Corp Jump to: navigation, search Name: Inter Action Corp Place: Kanagawa, Japan Zip: 236-0004 Product: Semiconductor equipment and testing devices maker building a PV...

  8. High order Chin actions in path integral Monte Carlo

    SciTech Connect (OSTI)

    Sakkos, K.; Casulleras, J.; Boronat, J.

    2009-05-28

    High order actions proposed by Chin have been used for the first time in path integral Monte Carlo simulations. Contrary to the Takahashi-Imada action, which is accurate to the fourth order only for the trace, the Chin action is fully fourth order, with the additional advantage that the leading fourth-order error coefficients are finely tunable. By optimizing two free parameters entering in the new action, we show that the time step error dependence achieved is best fitted with a sixth order law. The computational effort per bead is increased but the total number of beads is greatly reduced and the efficiency improvement with respect to the primitive approximation is approximately a factor of 10. The Chin action is tested in a one-dimensional harmonic oscillator, a H{sub 2} drop, and bulk liquid {sup 4}He. In all cases a sixth-order law is obtained with values of the number of beads that compare well with the pair action approximation in the stringent test of superfluid {sup 4}He.

  9. Price/Cost Proposal Form

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    PRICE/COST PROPOSAL FORM Page No. of NREL Solicitation Document Number: Offeror's Name and Address: Title of Proposed Effort and Task No., Phase No., or Project Total, As Applicable: Telephone Number: Total Amount of Task/Phase No. ___________ $ _______________________ Proposal Summary Total $ ________________________ DETAIL DESCRIPTION OF COST ELEMENTS 1. DIRECT MATERIALS (Attach Itemized Listing for all Purchased Parts, Purchased Items or Services, Raw Materials, Standard Commercial Items, or

  10. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  11. Unsolicited Proposals | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    for all Unsolicited Proposals is the National Energy Technology Laboratory (NETL) which includes all DOE Program Research Areas. http:www.netl.doe.govbusinessuspunsol.html...

  12. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  13. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

    SciTech Connect (OSTI)

    Tsatsulnikov, A. F. Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Kryzhanovskaya, N. V.; Synitsin, M. A.; Sizov, V. S.; Zakgeim, A. L.; Mizerov, M. N.

    2010-06-15

    A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue and yellow-green spectral ranges. The optical properties of structures of this kind have been studied, and it is demonstrated that the use of such a superlattice makes it possible to obtain effective emission from the active region.

  14. CEQ Guidance on the Application of NEPA to Proposed Federal Actions...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    While the guidance arises in the context of negotiations undertaken with the governments of Mexico and Canada to develop an agreement on transboundary environmental impact ...

  15. Appliance Standard Program - The FY 2003 Priority -Setting Summary Report and Actions Proposed - Appendix B

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    APPENDIX B: Data Sheets for Existing Products Table of Contents Product Rulemaking Priority Page Product Rulemaking Priority Page Commercial Air-Cooled Central A/C & Air-Source HP, 65-240 kBtu/h Standards High B-1 High Intensity Discharge Lamps Determination High B-27 Central A/C & HP, 3 phase, < 65 kBtu/h Standards Medium B-2 Test Procedure Low B-28 Clothes Dryers Standards Low B-3 Lamps, Fluorescent Standards Low B-29 Test Procedure Low B-4 Test Procedure Low B-30 Clothes Washers

  16. Appliance Standards Program - The FY 2003 Priority Setting Report and Actions Proposed - Appendix C

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    APPENDIX C: Data Sheets for New Products Table of Contents Product Page Product Page Commercial Refrigeration Miscellaneous Residential Equipment Standards Consideration C-1 Standards Consideration C-50 Beverage Merchandisers Test Procedure Summary C-3 Ceiling Fans Test Procedure Summary C-52 Standards Consideration C-4 Compact Audio Standards Consideration C-53 Ice Machines Test Procedure Summary C-6 Component Stereo and Rack Audio Standards Consideration C-54 Reach-In Freezers Standards

  17. Appliance Standards Program - The FY 2003 Priority Setting Report and Actions Proposed -Appendix A

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    APPENDIX A: Technical Support Document (TSD) Appendixes i A1 Introduction ........................................................................................ A1-1 A1.1 Methodology for Energy Consumption and Savings Estimate............... A1-2 A1.2 Energy Consumption and Savings Calculation Methodology ................ A1-3 A1.2.1 Device Annual Energy Consumption (AEC) Estimates ...........................A1-3 A1.2.1.1 Equipment Stock,

  18. Description of Proposed Interim Remedial Action at the Weldon Spring Site.

    Office of Legacy Management (LM)

  19. Transcript of Proceedings: Quarry Waste Removal Proposed Plan Weldon Spring Site Remedial Action Projec

    Office of Legacy Management (LM)

  20. Letter: EPA has reviewed the DOE's proposals for the following four interim response actions

    Office of Legacy Management (LM)

  1. Proposal of Removal Action in the Southeast Drainage. SE-200-201-1.07.

    Office of Legacy Management (LM)

  2. Proposals For Four Interim Response Actions. IR-600-604-1.01.

    Office of Legacy Management (LM)

  3. Proposed Interim Response Action, Construction of Ash Pond Isolation System at the Weldon Spring Site.

    Office of Legacy Management (LM)

  4. Texas Solar Collaboration Action Plan

    SciTech Connect (OSTI)

    Winland, Chris

    2013-02-14

    Texas Solar Collaboration Permitting and Interconenction Process Improvement Action Plan. San Antonio-specific; Investigate feasibility of using electronic signatures; Investigate feasibility of enabling other online permitting processes (e.g., commercial); Assess need for future document management and workflow/notification IT improvements; Update Information Bulletin 153 regarding City requirements and processes for PV; Educate contractors and public on CPS Energys new 2013 solar program processes; Continue to discuss downtown grid interconnection issues and identify potential solutions; Consider renaming Distributed Energy Resources (DER); and Continue to participate in collaborative actions.

  5. Corrective Action Decision Document for Corrective Action Unit 562: Waste Systems Nevada Test Site, Nevada, Revision 0

    SciTech Connect (OSTI)

    Mark Krause

    2010-08-01

    This Corrective Action Decision Document (CADD) presents information supporting the selection of corrective action alternatives (CAAs) leading to the closure of Corrective Action Unit (CAU) 562, Waste Systems, in Areas 2, 23, and 25 of the Nevada Test Site, Nevada. This complies with the requirements of the Federal Facility Agreement and Consent Order (FFACO) that was agreed to by the State of Nevada; U.S. Department of Energy (DOE), Environmental Management; U.S. Department of Defense; and DOE, Legacy Management. Corrective Action Unit 562 comprises the following corrective action sites (CASs): 02-26-11, Lead Shot 02-44-02, Paint Spills and French Drain 02-59-01, Septic System 02-60-01, Concrete Drain 02-60-02, French Drain 02-60-03, Steam Cleaning Drain 02-60-04, French Drain 02-60-05, French Drain 02-60-06, French Drain 02-60-07, French Drain 23-60-01, Mud Trap Drain and Outfall 23-99-06, Grease Trap 25-60-04, Building 3123 Outfalls The purpose of this CADD is to identify and provide the rationale for the recommendation of CAAs for the 13 CASs within CAU 562. Corrective action investigation (CAI) activities were performed from July 27, 2009, through May 12, 2010, as set forth in the CAU 562 Corrective Action Investigation Plan. The purpose of the CAI was to fulfill the following data needs as defined during the data quality objective (DQO) process: Determine whether COCs are present. If COCs are present, determine their nature and extent. Provide sufficient information and data to complete appropriate corrective actions. A data quality assessment (DQA) performed on the CAU 562 data demonstrated the quality and acceptability of the data for use in fulfilling the DQO data needs. Analytes detected during the CAI were evaluated against appropriate final action levels (FALs) to identify the COCs for each CAS. The results of the CAI identified COCs at 10 of the 13 CASs in CAU 562, and thus corrective action is required. Assessment of the data generated from investigation activities conducted at CAU 562 is shown in Table ES-1. Based on the evaluation of analytical data from the CAI, review of future and current operations at the 13 CASs, and the detailed and comparative analysis of the potential CAAs, the following corrective actions are recommended for CAU 562. No further action is the preferred corrective action for CASs 02-60-01, 02-60-06, and 02-60-07. Clean closure is the preferred corrective action for CASs 02-26-11, 02-44-02, 02-59-01, 02-60-02, 02-60-03, 02-60-04, 02-60-05, 23-60-01, 23-99-06, and 25-60-04. The preferred CAAs were evaluated on technical merit focusing on performance, reliability, feasibility, safety, and cost. The alternatives were judged to meet all requirements for the technical components evaluated. The alternatives meet all applicable federal and state regulations for closure of the site and will reduce potential exposures to contaminated media to acceptable levels. The DOE, National Nuclear Security Administration Nevada Site Office provides the following recommendations: No further corrective action is required at CASs 02-60-01, 02-60-06, and 02-60-07. Clean closure is recommended for the remaining 10 CASs in CAU 562. A Corrective Action Plan will be submitted to the Nevada Division of Environmental Protection that contains a detailed description of the proposed actions that will be taken to implement the selected corrective actions.

  6. Impact of defects on the electrical transport, optical properties and failure mechanisms of GaN nanowires.

    SciTech Connect (OSTI)

    Armstrong, Andrew M.; Aubry, Sylvie; Shaner, Eric Arthur; Siegal, Michael P.; Li, Qiming; Jones, Reese E.; Westover, Tyler; Wang, George T.; Zhou, Xiao Wang; Talin, Albert Alec; Bogart, Katherine Huderle Andersen; Harris, C. Thomas; Huang, Jian Yu

    2010-09-01

    We present the results of a three year LDRD project that focused on understanding the impact of defects on the electrical, optical and thermal properties of GaN-based nanowires (NWs). We describe the development and application of a host of experimental techniques to quantify and understand the physics of defects and thermal transport in GaN NWs. We also present the development of analytical models and computational studies of thermal conductivity in GaN NWs. Finally, we present an atomistic model for GaN NW electrical breakdown supported with experimental evidence. GaN-based nanowires are attractive for applications requiring compact, high-current density devices such as ultraviolet laser arrays. Understanding GaN nanowire failure at high-current density is crucial to developing nanowire (NW) devices. Nanowire device failure is likely more complex than thin film due to the prominence of surface effects and enhanced interaction among point defects. Understanding the impact of surfaces and point defects on nanowire thermal and electrical transport is the first step toward rational control and mitigation of device failure mechanisms. However, investigating defects in GaN NWs is extremely challenging because conventional defect spectroscopy techniques are unsuitable for wide-bandgap nanostructures. To understand NW breakdown, the influence of pre-existing and emergent defects during high current stress on NW properties will be investigated. Acute sensitivity of NW thermal conductivity to point-defect density is expected due to the lack of threading dislocation (TD) gettering sites, and enhanced phonon-surface scattering further inhibits thermal transport. Excess defect creation during Joule heating could further degrade thermal conductivity, producing a viscous cycle culminating in catastrophic breakdown. To investigate these issues, a unique combination of electron microscopy, scanning luminescence and photoconductivity implemented at the nanoscale will be used in concert with sophisticated molecular-dynamics calculations of surface and defect-mediated NW thermal transport. This proposal seeks to elucidate long standing material science questions for GaN while addressing issues critical to realizing reliable GaN NW devices.

  7. Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.01.2??m due to increased charge carrier's localization

    SciTech Connect (OSTI)

    Kryzhkov, D. I. Yablonsky, A. N.; Morozov, S. V.; Aleshkin, V. Ya.; Krasilnik, Z. F.; Zvonkov, B. N.; Vikhrova, O. V.

    2014-11-28

    In this work, a study of the photoluminescence (PL) temperature dependence in quantum well GaAs/GaAsSb and double quantum well InGaAs/GaAsSb/GaAs heterostructures grown by metalorganic chemical vapor deposition with different parameters of GaAsSb and InGaAs layers has been performed. It has been demonstrated that in double quantum well InGaAs/GaAsSb/GaAs heterostructures, a significant shift of the PL peak to a longer-wavelength region (up to 1.2??m) and a considerable reduction in the PL thermal quenching in comparison with GaAs/GaAsSb structures can be obtained due to better localization of charge carriers in the double quantum well. For InGaAs/GaAsSb/GaAs heterostructures, an additional channel of radiative recombination with participation of the excited energy states in the quantum well, competing with the main ground-state radiative transition, has been revealed.

  8. Guidance Regarding Actions That May Proceed During the NEPA Process...

    Office of Environmental Management (EM)

    Actions That May Proceed During the NEPA Process: Interim Actions Guidance Regarding Actions That May Proceed During the NEPA Process: Interim Actions DOE guidance to provide...

  9. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  10. Environmental Assessment of Remedial Action at the Riverton Uranium Mill Tailings Site, Riverton, Wyoming

    SciTech Connect (OSTI)

    1987-06-01

    The US Department of Energy (DOE) has prepared an environmental assessment (DOE/EA-0254) on the proposed remedial action at the inactive uranium milling site near Riverton, Wyoming. Based on the analyses in the EA, the DOE has determined that the proposed action does not constitute a major Federal action significantly affecting the quality of the human environment within the meaning of the National Environmental Policy Act (NEPA) of 1969 (42 U.S.C. 4321, et seq.). Therefore, the preparation of an environmental impact statement (EIS) is not required.

  11. POST-REMEDIAL ACTION REPORT

    Office of Legacy Management (LM)

    POST-REMEDIAL ACTION REPORT . FORTHE C. H. SCHNOOR SITE SPRINGDALE, PENNSYLVANIA SEPTEMBER 1995 Prepared for United States' Department of Energy Oak Ridge Operations Office Under Contract No. DE-ACQ5-910R2 1949 Gchtel National, 1nc. Oak Ridge, Tennessee Bechtel Job No. 14501 CONTENTS Page . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . r FIGURES iv . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

  12. Appendix VI Corrective Action Strategy

    National Nuclear Security Administration (NNSA)

    VI Corrective Action Strategy Revision No.: 2 February 2008 Federal Facility Agreement and Consent Order (FFACO) FFACO, Appendix VI February 2008 Revision 2 Page i of v Table of Contents List of Figures ................................................................................................................................ iii List of Tables ................................................................................................................................. iv List of Acronyms

  13. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  14. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  15. General Atomics (GA) Fusion News: A New Spin on Understanding Plasma

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Confinement | Princeton Plasma Physics Lab General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement American Fusion News Category: General Atomics (GA) Link: General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement

  16. The proposed Institute for Micro-manufacturing, Louisiana Tech University

    SciTech Connect (OSTI)

    Not Available

    1994-07-01

    The Department of Energy (DOE) has prepared an Environmental Assessment (EA) DOE/EA-0958, evaluating the construction and equipping of two components of the proposed Institute for Micro-manufacturing at Louisiana Tech University (LTU), a proposed R and D facility to be located in Ruston, LA. and, the proposed installation of a beamline for micro-machining applications at the Center for Advanced Microstructures and Devices (CAMD) facility at Louisiana State University in Baton Rouge, LA. The objective of the proposed project is to focus on the applied, rather than basic research emphasizing the design and development, metrology, inspection and testing, and the assembly and production of micron and submicron structures and devices. Also, the objective of the beamline at CAMD would be the fundamental study of processing and analysis technologies, including x-ray lithography, which are important to microstructures fabrication and electronic device development. Based on the analysis in the EA, the DOE has determined that the proposed action does not constitute a major federal action significantly affecting the quality of the human environment within the meaning of the National Environmental Policy Act of 1969 (NEPA). Therefore, the preparation of an Environmental Impact Statement is not required.

  17. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-μm transport was observed within an electron spin lifetime of 1.2 ns at room temperature when using an in-plane electric field of 1.75 kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  18. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  19. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  20. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  1. Original Workshop Proposal and Description

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Notes for Vis Requirements » Original Workshop Proposal and Description Original Workshop Proposal and Description Visualization Requirements for Computational Science and Engineering Applications Proposal for a DoE Workshop to Be Held 
at the Berkeley Marina Radisson Hotel,
Berkeley, California, June 5, 2002
(date and location are tenative) Workshop Co-organizers: Bernd Hamann 
University of California-Davis Lawrence Berkeley Nat'l Lab. E. Wes Bethel 
Lawrence Berkeley Nat'l Lab.

  2. Climate Action Champions | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Initiatives » Climate Action Champions Climate Action Champions Climate Action Champions In the fall of 2014, the White House launched the Climate Action Champions competition to identify and recognize local climate leaders and provide targeted Federal support to help those communities further their ambitions. Following a competitive process led by the U.S. Department of Energy (DOE), the Administration announced 16 designees from around the country as the first class of Climate Action

  3. Generation and control of spin-polarized photocurrents in GaMnAs heterostructures

    SciTech Connect (OSTI)

    Bezerra, Anibal T. Farinas, Paulo F.; Studart, Nelson; Degani, Marcos H.; Maialle, Marcelo Z.

    2014-01-13

    Photocurrents are calculated for a specially designed GaMnAs semiconductor heterostructure. The results reveal regions in the infrared range of the energy spectrum, in which the proposed structure is remarkably spin-selective. For such photon energies, the generated photocurrents are strongly spin-polarized. Application of a relatively small static bias in the growth direction of the structure is predicted to efficiently reverse the spin-polarization for some photon energies. This behavior suggests the possibility of conveniently simple switching mechanisms. The physics underlying the results is studied and understood in terms of the spin-dependent properties emerging from the particular potential profile of the structure.

  4. Optical properties of multi-stacked InGaAs/GaNAs quantum dot solar cell fabricated on GaAs (311)B substrate

    SciTech Connect (OSTI)

    Shoji, Yasushi; Akimoto, Katsuhiro; Okada, Yoshitaka

    2012-09-15

    Quantum dot solar cells (QDSCs) comprised of 10 stacked pairs of strain-compensated InGaAs/GaNAs QD structure have been fabricated by atomic hydrogen-assisted molecular beam epitaxy. A homogeneous and high-density QD array structure with improved in-plane ordering and total density of {approx}10{sup 12} cm{sup -2} has been achieved on GaAs (311)B grown at 460 Degree-Sign C after stacking. The external quantum efficiency (EQE) of InGaAs/GaNAs QDSC increases in the longer wavelength range due to additive contribution from QD layers inserted in the intrinsic region. The short-circuit current density measured for QDSC is 17.2 mA/cm{sup 2} compared to 14.8 mA/cm{sup 2} of GaAs reference cell. Further, an increase in EQE due to photocurrent production by 2-step photon absorption has been observed at room temperature though it is still small at around 0.1%.

  5. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect (OSTI)

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  6. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  7. Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer

    SciTech Connect (OSTI)

    Yang, Weiquan; Becker, Jacob; Liu, Shi; Kuo, Ying-Shen; Li, Jing-Jing; Zhang, Yong-Hang; Landini, Barbara; Campman, Ken

    2014-05-28

    This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In{sub 0.49}Ga{sub 0.51}P/GaAs/In{sub 0.49}Ga{sub 0.51}P double-heterostructure PN junction with an ultra-thin 300?nm thick GaAs absorber, combined with a 5??m thick Al{sub 0.52}In{sub 0.48}P layer with a textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF{sub 2}/ZnS anti-reflective coating demonstrated open-circuit voltages (V{sub oc}) up to 1.00?V, short-circuit current densities (J{sub sc}) up to 24.5?mA/cm{sup 2}, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated J{sub sc} and conversion efficiency of these devices are expected to reach 26.6?mA/cm{sup 2} and 20.7%, respectively.

  8. Original Workshop Proposal and Description

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Engineering Applications Proposal for a DoE Workshop to Be Held at the Berkeley Marina Radisson Hotel,Berkeley, California, June 5, 2002(date and location are...

  9. Technical Proposal Disclosure Policy - ITER

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposal Disclosure Policy - ITER Pursuant to this solicitation, UT-Battelle will treat confidential proposal information as such and will disclose such information on a need to know basis to UT-Battelle employees and agents, DOE, and ITER- International Organization (ITER-IO) representatives for purposes of evaluation. It is hereby noted that any information distributed to ITER-IO will be of a technical nature; pricing information will not be distributed to ITER-IO.

  10. Research Proposals | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    How to Apply » Research Proposals Research Proposals The EERE Postdoctoral Research Awards are intended to be an avenue for significant energy efficiency and renewable energy innovation. To enable the participant's creativity as they conduct their postdoctoral research, the Research Awards have been designed to follow the "Innovation Time Out" model so that participants allot roughly 80% of their time to their core project research tasks and 20% of their time to "innovation"

  11. Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3??m

    SciTech Connect (OSTI)

    Goldmann, Elias Jahnke, Frank; Paul, Matthias; Kettler, Jan; Jetter, Michael; Michler, Peter; Krause, Florian F.; Mller, Knut; Mehrtens, Thorsten; Rosenauer, Andreas

    2014-10-13

    A combined experimental and theoretical study of InGaAs/GaAs quantum dots (QDs) emitting at 1.3??m under the influence of a strain-reducing InGaAs quantum well is presented. We demonstrate a red shift of 2040?nm observed in photoluminescence spectra due to the quantum well. The InGaAs/GaAs QDs grown by metal organic vapor phase epitaxy show a bimodal height distribution (1?nm and 5?nm) and indium concentrations up to 90%. The emission properties are explained with combined tight-binding and configuration-interaction calculations of the emission wavelengths in conjunction with high-resolution scanning transmission electron microscopy investigations of QD geometry and indium concentrations in the QDs, which directly enter the calculations. QD geometries and concentration gradients representative for the ensemble are identified.

  12. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect (OSTI)

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  13. DOE Institutes Enforcement Action against 4 Showerhead Manufacturers for

    Office of Environmental Management (EM)

    Failure to Certify 116 Products | Department of Energy against 4 Showerhead Manufacturers for Failure to Certify 116 Products DOE Institutes Enforcement Action against 4 Showerhead Manufacturers for Failure to Certify 116 Products January 28, 2010 - 1:49pm Addthis WASHINGTON DC - The Office of General Counsel has issued Notices of Proposed Civil Penalty to Zoe Industries, Altmans Products LLC, EZ-FLO International, and Watermark Designs, Ltd. for failing to certify to the Department of

  14. Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

    SciTech Connect (OSTI)

    Calciati, Marco; Vallone, Marco; Zhou, Xiangyu; Ghione, Giovanni; Goano, Michele Bertazzi, Francesco; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico; Verzellesi, Giovanni; Zhu, Dandan; Humphreys, Colin

    2014-06-15

    Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural features, but also to make inferences about the loss mechanisms responsible for LED efficiency droop at high driving currents. The limits of this investigative approach are discussed here in a case study based on a comprehensive set of current- and temperature-dependent EL data from blue LEDs with low and high densities of threading dislocations (TDs). First, the effects limiting the applicability of simpler (closed-form and/or one-dimensional) classes of models are addressed, like lateral current crowding, vertical carrier distribution nonuniformity, and interband transition broadening. Then, the major sources of uncertainty affecting state-of-the-art numerical device simulation are reviewed and discussed, including (i) the approximations in the transport description through the multi-quantum-well active region, (ii) the alternative valence band parametrizations proposed to calculate the spontaneous emission rate, (iii) the difficulties in defining the Auger coefficients due to inadequacies in the microscopic quantum well description and the possible presence of extra, non-Auger high-current-density recombination mechanisms and/or Auger-induced leakage. In the case of the present LED structures, the application of three-dimensional numerical-simulation-based analysis to the EL data leads to an explanation of efficiency droop in terms of TD-related and Auger-like nonradiative losses, with a C coefficient in the 10{sup −30} cm{sup 6}/s range at room temperature, close to the larger theoretical calculations reported so far. However, a study of the combined effects of structural and model uncertainties suggests that the C values thus determined could be overestimated by about an order of magnitude. This preliminary attempt at uncertainty quantification confirms, beyond the present case, the need for an improved description of carrier transport and microscopic radiative and nonradiative recombination mechanisms in device-level LED numerical models.

  15. Novel attributes in modeling and optimizing of the new graphene based In{sub x}Ga{sub 1?x}N Schottky barrier solar cells

    SciTech Connect (OSTI)

    Arefinia, Zahra [Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz 51666-14766 (Iran, Islamic Republic of); Asgari, Asghar, E-mail: asgari@tabrizu.ac.ir [Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz 51666-14766 (Iran, Islamic Republic of); School of Electrical, Electronic, and Computer Engineering, University of Western Australia, Crawley, WA 6009 (Australia)

    2014-05-21

    Based on the ability of In{sub x}Ga{sub 1?x}N materials to optimally span the solar spectrum and their superior radiation resistance, solar cells based on p-type In{sub x}Ga{sub 1?x}N with low indium contents and interfacing with graphene film (G/In{sub x}Ga{sub 1?x}N), is proposed to exploit the benefit of transparency and work function tunability of graphene. Then, their solar power conversion efficiency modeled and optimized using a new analytical approach taking into account all recombination processes and accurate carrier mobility. Furthermore, their performance was compared with graphene on silicon counterparts and G/p-In{sub x}Ga{sub 1?x}N showed relatively smaller short-circuits current (?7?mA/cm{sup 2}) and significantly higher open-circuit voltage (?4?V) and efficiency (?30%). The thickness, doping concentration, and indium contents of p-In{sub x}Ga{sub 1?x}N and graphene work function were found to substantially affect the performance of G/p-In{sub x}Ga{sub 1?x}N.

  16. Action Sheet 36 Final Report

    SciTech Connect (OSTI)

    Kips, R E; Kristo, M J; Hutcheon, I D

    2012-02-24

    Pursuant to the Arrangement between the European Commission DG Joint Research Centre (EC-JRC) and the Department of Energy (DOE) to continue cooperation on research, development, testing, and evaluation of technology, equipment, and procedures in order to improve nuclear material control, accountancy, verification, physical protection, and advanced containment and surveillance technologies for international safeguards, dated 1 September 2008, the IRMM and LLNL established cooperation in a program on the Study of Chemical Changes in Uranium Oxyfluoride Particles under IRMM-LLNL Action Sheet 36. The work under this action sheet had 2 objectives: (1) Achieve a better understanding of the loss of fluorine in UO{sub 2}F{sub 2} particles after exposure to certain environmental conditions; and (2) Provide feedback to the EC-JRC on sample reproducibility and characteristics.

  17. Take the Energy Action Challenge

    K-12 Energy Lesson Plans and Activities Web site (EERE)

    Students will work in pairs or small groups to apply knowledge of energy-wise habits to evaluate energy use in their homes and schools and make recommendations for improved efficiency. They will use an energy audit tool to collect data on their home and school energy habits and present an action plan to their class. Further communication at the school and district level is encouraged.

  18. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  19. Characterization of Zns-GaP Naon-composites

    SciTech Connect (OSTI)

    Todd, V.

    1993-12-09

    It proved possible to produce consistent, high-quality nanocrystalline ZnS powders with grain sizes as small as 8 nm. These powders are nano-porous and are readily impregnated with GaP precursor, although inconsistently. Both crystal structure and small grain size of the ZnS can be maintained through the use of GaP. Heat treatment of the impregnated powders results in a ZnS-GaP composite structure where the grain sizes of the phases are on the order of 10--20 nm. Conventional powder processing should be able to produce optically dense ceramic compacts with improved mechanical properties and suitable IR transmission.

  20. Portsmouth Proposed Plan for the Site-wide Waste Disposition Evaluation

    Energy Savers [EERE]

    Project | Department of Energy Proposed Plan for the Site-wide Waste Disposition Evaluation Project Portsmouth Proposed Plan for the Site-wide Waste Disposition Evaluation Project DOE has evaluated alternatives for managing waste that would be created by decomtamination and decommissioning of the buildings at the Portsmouth Site. Three remedial alternatives for management of anticipated Portsmouth waste were developed for consideration. This Proposed Plan describes the required no-action

  1. Outdoor Testing of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied

    SciTech Connect (OSTI)

    McMahon, W. E.; Emergy, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

    2005-08-01

    In this study, we measure the performance of GaInP2/GaAs tandem cells under direct beam sunlight outdoors in order to quantify their sensitivity to both spectral variation and GaInP2 top-cell thickness. A set of cells with five different top-cell thicknesses was mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for either the ASTM G-173 direct (G-173D) spectrum or the "air mass 1.5 global" (AM1.5G) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra with the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

  2. proposed surface and subsurface marker designs

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Images of proposed markers for the surface and subsurface Large Surface Marker - Proposed Design with Plaques of Text and Images Small Subsurface Marker - Proposed Design

  3. Proposed Changes to Electricity and Renewable (Photovoltaic)...

    U.S. Energy Information Administration (EIA) Indexed Site

    2017 Proposed Solar & Electricity Survey Form Changes 1 November 2015 Proposed Changes to Electricity and ... U.S. Energy Information Administration | 2017 Proposed Solar & ...

  4. Proposal Submittal and Scheduling Procedures for Macromolecular...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Crystallography Proposal. This proposal is peer reviewed by the Structural Molecular Biology and Biophysics subpanel of the SSRL Proposal Review Panel (PRP) for scientific merit...

  5. Category:Proposed deletion | Open Energy Information

    Open Energy Info (EERE)

    History Category:Proposed deletion Jump to: navigation, search This category contains articles which have been proposed for deletion. To tag an article for proposed deletion use...

  6. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  7. Making it pay in Athens, GA

    SciTech Connect (OSTI)

    Malloy, M.G.

    1997-04-01

    The materials recovery facility (MRF) in Athens, GA, is a well-fed recycling facility. But, if the local government has its way, it will be even better fed in the near future. The Athens-Clarke County (ACC) regional municipality in which the facility resides has a put-or-pay contract with the plant`s owner/operator, under which the more it feeds the MRF, the more money it receives in return, through the sale of recycled end products. The ACC Solid Waste Department uses a volume-based waste collection system that encourages residents to recycle--the more they recycle, the less trash they have to put out, and the less they pay each month. The Athens facility, which will be a featured site tour at next month`s WasteExpo `97 in nearby Atlanta, had its ground-breaking two years ago, in April 1995. ACC is responsible for delivering material--or seeing that recyclables are delivered--to the MRF, which is owned and operated by Resource Recovery Systems (RRS, Centerbrook, Conn.). Over the past year, ACC has stepped up various incentives for businesses to recycle and send their recyclables to the facility, including instituting pilot programs for commercial interests that offer them versions of volume-based collection similar to that done by residents.

  8. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  9. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

    SciTech Connect (OSTI)

    Guo, Lei; Yang, Xuelin Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Feng, Zhihong; Lv, Yuanjie; Wang, Xinqiang; Shen, B.; Ge, Weikun

    2014-12-15

    We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

  10. Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices

    SciTech Connect (OSTI)

    Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna

    2014-02-21

    We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

  11. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

    SciTech Connect (OSTI)

    Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing; Chen, Weixi; Ding, Ying

    2014-10-06

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ?51?nm at a center wavelength of 1060?nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

  12. City of Boulder- Climate Action Plan Fund

    Broader source: Energy.gov [DOE]

    Note: As of 2015, the Climate Action Plan is now referred to as the Climate Commitment. In November 2015, Boulder voters approved an extension of the  Climate Action Plan tax through 2020, with...

  13. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  14. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect (OSTI)

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  15. NREL: Technology Deployment - Climate Action Planning Tool

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home Technology Deployment Climate Action Planning Tool Technology Deployment - Climate Action Planning Tool NREL's Climate Action Planning Tool provides a quick, basic estimate of how various technology options can contribute to an overall climate action plan for your research campus. Use the tool to identify which options will lead to the most significant reductions in consumption of fossil fuels and in turn meet greenhouse gas reduction goals. Follow these four steps: Gather baseline energy

  16. SEAB Climate Action Plan | Department of Energy

    Energy Savers [EERE]

    SEAB Climate Action Plan SEAB Climate Action Plan A presentation on the Climate Action Plan presented by Dr. Jonathan Pershing, Deputy Assistant Secretary for Climate Change at the U.S. Department of Energy. PDF icon Climate Action Plan (pdf) More Documents & Publications U.S. Energy Sector Vulnerabilities to Climate Change and Extreme Weather Climate Change and the U.S. Energy Sector: Regional Vulnerabilities and Resilience Solutions Climate Change: Energy and Community Impacts

  17. Energy Action Month October 2014 Campaign Materials

    Broader source: Energy.gov [DOE]

    Campaign materials for "Transition to a Clean Energy Reality," the theme for Energy Action Month October 2014.

  18. Climate Action Plan | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Climate Action Plan Climate Action Plan Since President Obama's announcement of the Climate Action Plan (CAP) on June 25, 2013, the Department of Energy (DOE) has moved forward to lead initiatives and support interagency efforts that cut carbon pollution, augment resilience and preparedness in the face of climate impacts, and strengthen international partnerships addressing the issue. This effort involves activities all across the Department, including actions led by the Office of International

  19. Energy Action Month | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Action Month Energy Action Month Energy Action Month Lead our nation to a secure, clean, and prosperous energy future As proclaimed by President Obama, October marks Energy Action Month. With the March announcement of Executive Order 13693: Planning for Federal Sustainability in the Next Decade, the federal government faces even more challenging goals to reduce energy consumption. Agencies are committed to stepping up and adopting more sustainable operations to cut greenhouse gas

  20. EM International Program Action Table

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    EM INTERNATIONAL COOPERATIVE PROGRAM] October, 2012 E M I n t e r n a t i o n a l P r o g r a m s Page 1 ACTION TABLE Subject Lead Office Engaging Country Meeting Location Purpose Status Date of Event 3 rd US/German Workshop on Salt Repository Research, Design and Operations N. Buschman, EM-22 Germany Albuquerque & Carlsbad, NM Continue collaboration with Germans on salt repository research, design and operations. Draft agenda prepared. October 8-12, 2012 International Framework for Nuclear

  1. COSTS ASSOCIATED WITH WHISTLEBLOWER ACTIONS

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    A (May, 2014) COSTS ASSOCIATED WITH WHISTLEBLOWER ACTIONS Applicability: This section is applicable to all elements of the Department of Energy including the National Nuclear Security Administration. References: * Section 627 of the Energy Policy Act of 2005, codified at 42 U.S.C. 5853 * DEAR 931.205-47(h), Costs related to legal and other proceedings * DEAR 952.216-7, Allowable cost and payment * DEAR 970.3102-05-47(h), Costs related to legal and other proceedings * DEAR 970.5232-2, Payments

  2. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    SciTech Connect (OSTI)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer has the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.

  3. Environmental Assessment and FONSI Proposed Decontamination and Disassembly of the Argonne Thermal Source Reactor (ATSR) at Argonne National Laboratory

    SciTech Connect (OSTI)

    N /A

    1998-07-15

    The purpose of this project is to protect human health and the environment from risks associated with the contaminated surplus ATSR. The proposed action is needed because the ATSR, a former experimental reactor, contains residual radioactivity and hazardous materials.

  4. Quaternary AlInGaN/InGaN quantum well on vicinal c-plane substrate for high emission intensity of green wavelengths

    SciTech Connect (OSTI)

    Park, Seoung-Hwan; Pak, Y. Eugene; Park, Chang Young; Mishra, Dhaneshwar; Yoo, Seung-Hyun; Cho, Yong-Hee Shim, Mun-Bo; Kim, Sungjin

    2015-05-14

    Electronic and optical properties of non-trivial semipolar AlInGaN/InGaN quantum well (QW) structures are investigated by using the multiband effective-mass theory and non-Markovian optical model. On vicinal c-plane GaN substrate miscut by a small angle (??GaN/InGaN system is shown to have ?3 times larger spontaneous emission peak intensity than the conventional InGaN/GaN system at green wavelength. It is attributed to much larger optical matrix element of the quaternary AlInGaN/InGaN system, derived from the reduction of internal electric field induced by polarizations. This effect exceeds the performance-degrading factor of smaller quasi-Fermi-level separation for the quaternary AlInGaN/InGaN system than that for the conventional InGaN/GaN system. Results indicate that the use of quaternary III-nitride QWs on vicinal substrates may be beneficial in improving the performance of optical devices emitting green light.

  5. A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT)

    SciTech Connect (OSTI)

    Tsai, Jung-Hui; Lee, Ching-Sung; Lour, Wen-Shiung; Ma, Yung-Chun; Ye, Sheng-Shiun

    2011-05-15

    Excellent characteristics of an InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT) are first demonstrated. The insertion of a thin n-GaAs emitter layer between tynneling confinement and base layers effectivelty eliminates the potential spike at base-emitter junction and reduces the collector-emitter offset voltage, while the thin InGaP tunneling confinement layer is employed to reduce the transporting time across emitter region for electrons and maintain the good confinement effect for holes. Experimentally, the studied T-HEBN exhibits a maximum current gain of 285, a relatively low offset voltage of 40 mW, and a current-gain cutoff frequency of 26.4 GHz.

  6. Allocation Proposal (ERCAP) Application Deadlines

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Application Deadlines Allocation Proposal (ERCAP) Application Deadlines Award Type ERCAP Submission Open ERCAP Submission Deadline Award Decision Allocation Period Startup and Education Ongoing November 10, 2016 Within 3 weeks of applying 18 months from award (but must be renewed for the next allocation year) Production (DOE awarded) for the rest of allocation year (AY) 2016 Ongoing November 10, 2016 Within 4 weeks of applying (pending sufficient DOE reserves of time) through January 9, 2017 All

  7. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect (OSTI)

    zduran, Mustafa; Turgut, Kemal; Arikan, Nihat; ?yigr, Ahmet; Candan, Abdullah

    2014-10-06

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  8. Development & Industrialization of InGaN/GaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Flemish, Lumileds joe.flemish@philips.com Development & Industrialization of InGaN/GaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture 2015 Building Technologies Office Peer Review 2 Project Summary Timeline: Start date: August 1, 2013 Planned end date: July 31, 2015 Key Milestones: 1. Repeatable demonstration of PSS emitter performance within 1.5% of the TFFC counterpart; - met January 2014 2. Demonstration of PSS emitter performance exceeding TFFC counterpart by 2%:

  9. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  10. Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2

    SciTech Connect (OSTI)

    Hongpinyo, V; Ding, Y H; Dimas, C E; Wang, Y; Ooi, B S; Qiu, W; Goddard, L L; Behymer, E M; Cole, G D; Bond, T C

    2008-06-11

    The authors investigate the effect of intermixing in InGaAs/GaAs quantum well structure using Cu-doped SiO{sub 2}. The incorporation of Cu into the silica film yields larger bandgap shift than typical impurity-free vacancy diffusion (IFVD) method at a lower activation temperature. We also observe enhancement of the photoluminescence (PL) signal from the intermixed InGaAs/GaAs quantum well structure after being cycle-annealed at 850 C.

  11. Radiation damage of GaAs thin-film solar cells on Si substrates

    SciTech Connect (OSTI)

    Itoh, Y.; Yamaguchi, M.; Nishioka, T.; Yamamoto, A.

    1987-01-15

    1-MeV electron irradiation damages in GaAs thin-film solar cells on Si substrates are examined for the first time. Damage constant for minority-carrier diffusion length in GaAs heteroepitaxial films on Si substrates is found to be the same as that in GaAs homoepitaxial films on GaAs substrates. This agreement suggests that GaAs/Si has the same defect introduction rate with radiation as GaAs/GaAs. The degradation of GaAs solar cells on Si with electron irradiation is less than that of GaAs solar cells on GaAs, because in the present, GaAs films on Si substrates have lower minority-carrier diffusion length compared to GaAs films on GaAs and these films are insensitive to radiation. The p/sup +/-p/sup +/-n AlGaAs-GaAs heteroface solar cell with junction depth of about 0.3 ..mu..m is concluded to be useful for a high-efficiency and radiation-resistant solar cell fabricated on a Si substrate.

  12. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore » the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  13. Fiscal Year 2013 Trails Management Program Mitigation Action Plan Annual Report, October 2013

    SciTech Connect (OSTI)

    Pava, Daniel S.

    2015-03-25

    This Trails Management Program Mitigation Action Plan Annual Report (Trails MAPAR) has been prepared for the Department of Energy (DOE)/National Nuclear Security Administration (NNSA) as part of implementing the 2003 Final Environmental Assessment for the Proposed Los Alamos National Laboratory Trails Management Program (DOE 2003). The Trails Mitigation Action Plan (MAP) is now a part of the Site-Wide Environmental Impact Statement for the Continued Operation of Los Alamos National Laboratory (DOE/EIS 0380) Mitigation Action Plan (2008 SWEIS MAP) (DOE 2008). The MAP provides guidance for the continued implementation of the Trails Management Program at Los Alamos National Laboratory (LANL) and integration of future mitigation actions into the 2008 SWEIS MAP to decrease impacts associated with recreational trails use at LANL. This eighth MAPAR includes a summary of Trails Management Program activities and actions during Fiscal Year (FY) 2013, from October 2012 through September 2013.

  14. Structural and optical properties of Ga{sub 2}O{sub 3}:In films deposited on MgO (1 0 0) substrates by MOCVD

    SciTech Connect (OSTI)

    Kong Lingyi; Ma Jin; Luan Caina; Zhu Zhen

    2011-08-15

    Ga{sub 2}O{sub 3}:In films with different indium (In) content x [x=In/(Ga+In) atomic ratio] have been deposited on MgO (1 0 0) substrates by metalorganic chemical vapor deposition (MOCVD). Structural analyses revealed that the film deposited with actual In content (x') of 0.09 was an epitaxial film and the films with x'=0.18 and 0.37 had mixed-phase structures of monoclinic Ga{sub 2}O{sub 3} and bixbyite In{sub 2}O{sub 3}. The absolute average transmittance of the obtained films in the visible region exceeded 95%, and the band gap was in the range of 4.74-4.87 eV. Photoluminescence (PL) measurements were performed at room temperature, in which the visible luminescences were strong and could be seen by the naked eye. The strong emissions in the visible light region were proposed to originate from the gallium vacancies, oxygen deficiencies and other defects in these films. - Graphical abstract: Low magnification XTEM (a), HRTEM (b) and SAED (c) micrographs of the interface area between Ga{sub 1.82}In{sub 0.18}O{sub 3} film and MgO substrate have showed the Ga{sub 1.82}In{sub 0.18}O{sub 3} is an epitaxial film. Highlights: > Ga{sub 1.82}In{sub 0.18}O{sub 3} epitaxial film was deposited on MgO(1 0 0) substrate. > The transmittance of the Ga{sub 2}O{sub 3}:In films in the visible region exceeded 95%. > Strong emissions were observed in the photoluminescence measurements of the films.

  15. EIS-0397: Mitigation Action Plan | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Mitigation Action Plan EIS-0397: Mitigation Action Plan Lyle Falls Fish Passage Project This Mitigation Action Plan identifies measures that are intended to avoid, reduce, or...

  16. EA-1923: Mitigation Action Plan | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Mitigation Action Plan EA-1923: Mitigation Action Plan Green Energy School Wind Turbine Project on Saipan, Commonwealth of the Northern Mariana Islands This Mitgation Action Plan ...

  17. China-Partnership for Climate Action | Open Energy Information

    Open Energy Info (EERE)

    Partnership for Climate Action (Redirected from Partnership for Climate Action - China) Jump to: navigation, search Name Partnership for Climate Action - China AgencyCompany...

  18. Laser Gain and Threshold Properties in Compressive-Strained and Lattice-Matched GaInNAs/GaAs Quantum Wells

    SciTech Connect (OSTI)

    Chow, W.W.; Jones, E.D.; Modine, N.A.; Allerman, A.A.; Kurtz, S.R.

    1999-08-04

    The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GAInNAs/GaAs laser structures.

  19. III. Waiver of Proposed Rulemaking

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    82 Federal Register / Vol. 77, No. 241 / Friday, December 14, 2012 / Rules and Regulations technical errors in § 447.400(a) and § 447.405 listed on page 66701. One correction ensures consistency between two sentences in the same paragraph and the other restores text inadvertently omitted from the final rule that had been included in the May 11, 2012 notice of proposed rulemaking (77 FR 27671) on pages 26789-90. Thus, we are correcting page 66701 to reflect the correct information. III. Waiver

  20. Environmental assessment of remedial action at the Naturita Uranium Processing Site near Naturita, Colorado. Revision 4

    SciTech Connect (OSTI)

    Not Available

    1994-05-01

    The Uranium Mill Tailings Radiation Control Act (UMTRCA) of 1978, Public Law (PL) 95-604, authorized the US Department of Energy (DOE) to perform remedial action at the Naturita, Colorado, uranium processing site to reduce the potential health effects from the radioactive materials at the site and at vicinity properties associated with the site. The US Environmental Protection Agency (EPA) promulgated standards for the UMTRCA that contain measures to control the contaminated materials and to protect groundwater quality. Remedial action at the Naturita site must be performed in accordance with these standards and with the concurrence of the US Nuclear Regulatory Commission (NRC) and the state of Colorado. The proposed remedial action for the Naturita processing site is relocation of the contaminated materials and debris to either the Dry Flats disposal site, 6 road miles (mi) [10 kilometers (km)] to the southeast, or a licensed non-DOE disposal facility capable of handling RRM. At either disposal site, the contaminated materials would be stabilized and covered with layers of earth and rock. The proposed Dry Flats disposal site is on land administered by the Bureau of Land Management (BLM) and used primarily for livestock grazing. The final disposal site would cover approximately 57 ac (23 ha), which would be permanently transferred from the BLM to the DOE and restricted from future uses. The remedial action would be conducted by the DOE`s Uranium Mill Tailings Remedial Action (UMTRA) Project. This report discusses environmental impacts associated with the proposed remedial action.

  1. Environmental assessment of remedial action at the Naturita Uranium processing site near Naturita, Colorado. Revision 2

    SciTech Connect (OSTI)

    Not Available

    1994-01-01

    The proposed remedial action for the Naturita processing site is relocation of the contaminated materials and debris to the Dry Flats disposal sits, 6 road miles (mi) [10 kilometers (km)) to the southeast. At the disposal site, the contaminated materials would be stabilized and covered with layers of earth and rock. The proposed disposal site is on land administered by the Bureau of Land Management (BLM) and used primarily for livestock grazing. The final disposal sits would cover approximately 57 ac (23 ha), which would be permanently transferred from the BLM to the DOE and restricted from future uses. The remedial action activities would be conducted by the DOE`s Uranium Mill Tailings Remedial Action (UMTRA) Project. The proposed remedial action would result in the loss of approximately 162 ac (66 ha) of soils at the processing and disposal sites; however, 133 ac (55 ha) of these soils at and adjacent to the processing site are contaminated and cannot be used for other purposes. If supplemental standards are approved by the NRC and state of Colorado, approximately 112 ac (45 ha) of contaminated soils adjacent to the processing site would not be cleaned up. This area is steeply sloped. The cleanup of this contamination would have adverse environmental consequences and would be potentially hazardous to remedial action workers. Another 220 ac (89 ha) of soils would be temporarily disturbed during the remedial action. The final disposal site would result in approximately 57 ac (23 ha) being removed from livestock grazing and wildlife use.

  2. Environmental assessment of remedial action at the Naturita uranium processing site near Naturita, Colorado. Revision 3

    SciTech Connect (OSTI)

    Not Available

    1994-02-01

    The proposed remedial action for the Naturita processing site is relocation of the contaminated materials and debris to the Dry Flats disposal site, 6 road miles (mi) [10 kilometers (km)] to the southeast. At the disposal site, the contaminated materials would be stabilized and covered with layers of earth and rock. The proposed disposal site is on land administered by the Bureau of Land Management (BLM) and used primarily for livestock grazing. The final disposal site would cover approximately 57 ac (23 ha), which would be permanently transferred from the BLM to the DOE and restricted from future uses. The remedial action activities would be conducted by the DOE`s Uranium Mill Tailings Remedial Action (UMTRA) Project. The proposed remedial action would result in the loss of approximately 162 ac (66 ha) of soils at the processing and disposal sites; however, 133 ac (55 ha) of these soils at and adjacent to the processing site are contaminated and cannot be used for other purposes. If supplemental standards are approved by the NRC and state of Colorado, approximately 112 ac (45 ha) of contaminated soils adjacent to the processing site would not be cleaned up. This area is steeply sloped. The cleanup of this contamination would have adverse environmental consequences and would be potentially hazardous to remedial action workers. Another 220 ac (89 ha) of soils would be temporarily disturbed during the remedial action. The final disposal site would result in approximately 57 ac (23 ha) being removed from livestock grazing and wildlife use.

  3. Radiation resistance of GaAs-GaAlAs vertical cavity surface emitting lasers

    SciTech Connect (OSTI)

    Jabbour, J.; Zazoui, M.; Sun, G.C.; Bourgoin, J.C.; Gilard, O.

    2005-02-15

    The variations of the optical and electrical characteristics of a vertical cavity surface emitting laser based on GaAs quantum wells have been monitored versus irradiation with 1 MeV electrons. The results are understood by the introduction of nonradiative recombination centers in the wells whose characteristics, capture cross section for minority carriers times their introduction rate, can be determined. A similar study performed for proton irradiation shows that the results can be explained in the same way when the introduction rate of the defects is replaced by the proton energy loss into atomic collisions. These results allow us to deduce the equivalence between electron and proton irradiations: A flux of 1 proton cm{sup -2} which loses an energy E{sub nl} (eV) into atomic collisions is equivalent to a fluence of about 9x10{sup -2} E{sub nl} cm{sup -2}, 1 MeV electrons.

  4. Proposal Submittal and Scheduling Procedures for Macromolecular

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Crystallography | Stanford Synchrotron Radiation Lightsource Proposal Submittal and Scheduling Procedures for Macromolecular Crystallography Beam time for macromolecular crystallography projects is obtained by submitting an SSRL Macromolecular Crystallography Proposal. This proposal is peer reviewed by the Structural Molecular Biology and Biophysics subpanel of the SSRL Proposal Review Panel (PRP) for scientific merit and rating and for criticality of synchrotron radiation use. Proposal

  5. Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

    SciTech Connect (OSTI)

    Schmidt, Gordon Mller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jrgen; Glauser, Marlene; Carlin, Jean-Franois; Cosendey, Gatien; Butt, Raphal; Grandjean, Nicolas

    2014-07-21

    Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

  6. Key Actions for Optimizing for KNL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Key Actions for Optimizing for KNL Key Actions for Optimizing for KNL This webinar consisted of a presentation by Nathan Wichmann of Cray entitled, "Key Actions When Optimizing for KNL." Nathan is a Principal Performance Engineer responsible for tackling performance problems at Cray for many years and he is our contact for the NERSC/Cray Cori Applications Center of Excellence. Nathan's presentation results, in part, from his participation in several "brainstorming" telecons

  7. Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    SciTech Connect (OSTI)

    M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

    2005-01-26

    Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency ({eta}{sub TPV}) and a power density (PD) of {eta}{sub TPV} = 19% and PD=0.58 W/cm{sup 2} were measured for T{sub radiator} = 950 C and T{sub diode} = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be {eta}{sub TPV} = 26% and PD = 0.75 W/cm{sup 2}. These limits are extended to {eta}{sub TPV} = 30% and PD = 0.85W/cm{sup 2} if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are {approx}10% lower than the predicted semi-empirical limit to open circuit voltage for a device having absorbing substrate; the voltages are {approx}17% below that for an Auger-limited device having back surface reflector and two-pass optical design.

  8. Nuclear facility decommissioning and site remedial actions

    SciTech Connect (OSTI)

    Knox, N.P.; Webb, J.R.; Ferguson, S.D.; Goins, L.F.; Owen, P.T.

    1990-09-01

    The 394 abstracted references on environmental restoration, nuclear facility decommissioning, uranium mill tailings management, and site remedial actions constitute the eleventh in a series of reports prepared annually for the US Department of Energy's Remedial Action Programs. Citations to foreign and domestic literature of all types -- technical reports, progress reports, journal articles, symposia proceedings, theses, books, patents, legislation, and research project descriptions -- have been included. The bibliography contains scientific, technical, economic, regulatory, and legal information pertinent to the US Department of Energy's Remedial Action Programs. Major sections are (1) Surplus Facilities Management Program, (2) Nuclear Facilities Decommissioning, (3) Formerly Utilized Sites Remedial Action Programs, (4) Facilities Contaminated with Naturally Occurring Radionuclides, (5) Uranium Mill Tailings Remedial Action Program, (6) Grand Junction Remedial Action Program, (7) Uranium Mill Tailings Management, (8) Technical Measurements Center, (9) Remedial Action Program, and (10) Environmental Restoration Program. Within these categories, references are arranged alphabetically by first author. Those references having no individual author are listed by corporate affiliation or by publication title. Indexes are provided for author, corporate affiliation, title word, publication description, geographic location, subject category, and keywords. This report is a product of the Remedial Action Program Information Center (RAPIC), which selects and analyzes information on remedial actions and relevant radioactive waste management technologies.

  9. Solar Action Network | Open Energy Information

    Open Energy Info (EERE)

    Jump to: navigation, search Name: Solar Action Network Address: PO Box 15546 Place: San Luis Obispo, California Zip: 93401 Phone Number: 5058476527 Website:...

  10. Climate Protection Action Fund | Open Energy Information

    Open Energy Info (EERE)

    Repower America References The Climate Protetion Action Fund - Contact Us Learn More About Repower America Retrieved from "http:en.openei.orgw...

  11. Action Codes Table | National Nuclear Security Administration

    National Nuclear Security Administration (NNSA)

    NNSA Blog Home About Us Our Programs Defense Nuclear Security Nuclear Materials Management & Safeguards System NMMSS Information, Reports & Forms Code Tables Action...

  12. Mitigation Action Implementation Network (MAIN) | Open Energy...

    Open Energy Info (EERE)

    of Nationally Appropriate Mitigation Actions (NAMAs) and Low-Carbon Development (LCD) strategies in developing countries through regionally based dialogues, web-based...

  13. Worldwide Energy Efficiency Action through Capacity Building...

    Open Energy Info (EERE)

    Capacity Building and Training (WEACT) Jump to: navigation, search Logo: Worldwide Energy Efficiency Action through Capacity Building and Training (WEACT) Name Worldwide...

  14. Utilities Working with Industry: Action Plan

    SciTech Connect (OSTI)

    none,

    2010-06-25

    This action plan outlines joint ITP and utility activities that will help reach a national goal of reducing energy by 25 percent over then next 10 years.

  15. Rainforest Action Network RAN | Open Energy Information

    Open Energy Info (EERE)

    pressure corporations into publicly adopting policies that protect rainforests and the human rights of those living in those areas. References: Rainforest Action Network (RAN)1...

  16. A comparison of the RCRA Corrective Action and CERCLA Remedial Action Processes

    SciTech Connect (OSTI)

    Traceski, Thomas T.

    1994-02-01

    This document provides a comprehensive side-by-side comparison of the RCRA corrective action and the CERCLA remedial action processes. On the even-numbered pages a discussion of the RCRA corrective action process is presented and on the odd-numbered pages a comparative discussion of the CERCLA remedial action process can be found. Because the two programs have a difference structure, there is not always a direct correlation between the two throughout the document. This document serves as an informative reference for Departmental and contractor personnel responsible for oversight or implementation of RCRA corrective action and CERCLA remedial action activities at DOE environmental restoration sites.

  17. NSR&D Call for Proposals 2016

    Broader source: Energy.gov [DOE]

    The Call for Proposals memorandum represents the official 2016 Call for Proposals for the Department of Energy (DOE) Nuclear Safety Research and Development (NSR&D) Program.

  18. LOPP Proposal Checklist | Open Energy Information

    Open Energy Info (EERE)

    of specific proposal requirements for lease of power privilege proposals. Author Bureau of Reclamation Published Department of Interior, 2015 DOI Not Provided Check for DOI...

  19. Rulison Site corrective action report

    SciTech Connect (OSTI)

    1996-09-01

    Project Rulison was a joint US Atomic Energy Commission (AEC) and Austral Oil Company (Austral) experiment, conducted under the AEC`s Plowshare Program, to evaluate the feasibility of using a nuclear device to stimulate natural gas production in low-permeability gas-producing geologic formations. The experiment was conducted on September 10, 1969, and consisted of detonating a 40-kiloton nuclear device at a depth of 2,568 m below ground surface (BGS). This Corrective Action Report describes the cleanup of petroleum hydrocarbon- and heavy-metal-contaminated sediments from an old drilling effluent pond and characterization of the mud pits used during drilling of the R-EX well at the Rulison Site. The Rulison Site is located approximately 65 kilometers (40 miles) northeast of Grand Junction, Colorado. The effluent pond was used for the storage of drilling mud during drilling of the emplacement hole for the 1969 gas stimulation test conducted by the AEC. This report also describes the activities performed to determine whether contamination is present in mud pits used during the drilling of well R-EX, the gas production well drilled at the site to evaluate the effectiveness of the detonation in stimulating gas production. The investigation activities described in this report were conducted during the autumn of 1995, concurrent with the cleanup of the drilling effluent pond. This report describes the activities performed during the soil investigation and provides the analytical results for the samples collected during that investigation.

  20. NE-24 Unlverslty of Chicayo Remedial Action Plan

    Office of Legacy Management (LM)

    (YJ 4 tlsj .?I2 416 17 1983 NE-24 Unlverslty of Chicayo Remedial Action Plan 22&d 7 IA +-- E. I.. Keller, Director Technical Services Division Oak Ridge Operations Ufflce In response to your memorandum dated July 29, 1983, the Field Task Proposal/Agreement (FTP/A) received frw Aryonne National Laboratory (ANL) appears to be satisfactory, and this office concurs in the use of ANL to provide the decontamination effort as noted in the FTP/A. The final decontaminatton report should Include the

  1. Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240350?nm emission

    SciTech Connect (OSTI)

    Himwas, C.; Hertog, M. den; Dang, Le Si; Songmuang, R.; Monroy, E.

    2014-12-15

    We present structural and optical studies of AlGaN sections and AlGaN/AlN nanodisks (NDs) in nanowires grown by plasma-assisted molecular beam epitaxy. The Al-Ga intermixing at Al(Ga)N/GaN interfaces and the chemical inhomogeneity in AlGaN NDs evidenced by scanning transmission electron microscopy are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distribution calculated by minimizing the elastic energy in the structure. The alloy inhomogeneity increases with the Al content, leading to enhanced carrier localization signatures in the luminescence characteristics, i.e., red shift of the emission, s-shaped temperature dependence, and linewidth broadening. Despite these effects, the emission energy of AlGaN/AlN NDs can be tuned in the 240350?nm range with internal quantum efficiencies around 30%.

  2. Guidance Regarding Actions That May Proceed During the NEPA Process:

    Office of Environmental Management (EM)

    Interim Actions | Department of Energy Actions That May Proceed During the NEPA Process: Interim Actions Guidance Regarding Actions That May Proceed During the NEPA Process: Interim Actions DOE guidance to provide assistance in determining whether an action within the scope of an EIS may be taken before a record of decision is issued. The guidance reviews applicable requirements, gives examples of the types of actions that may proceed as interim actions, describes case studies, and outlines

  3. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-01

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

  4. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D. J.; Kurtz, Sarah R.; Kibbler, A. E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-15

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.

  5. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect (OSTI)

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  6. Simple intrinsic defects in GaAs : numerical supplement.

    SciTech Connect (OSTI)

    Schultz, Peter Andrew

    2012-04-01

    This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

  7. GA Hot Cell D&D Closeout Report

    Office of Legacy Management (LM)

    GENERAL ATOMICS HOT CELL FACILITY DECONTAMINATION & DECOMMISSIONING PROJECT FINAL PROJECT CLOSEOUT REPORT prepared for GA HOT CELL D&D PROJECT CONTRACT NUMBERS DE-AC03-84SF11962 and DE-AC03-95SF20798 PBS VL-GA-0012 Approvals Prepared by: James Davis, III Date Project Manager, Oakland Environmental Programs Office Reviewed by: John Lee Date Deputy, Oakland Environmental Programs Office Approved by: Laurence McEwen Date Acting Director, Oakland Environmental Programs Office General Atomics

  8. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect (OSTI)

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  9. Independent dynamic acousto-mechanical and electrostatic control of individual quantum dots in a LiNbO{sub 3}-GaAs hybrid

    SciTech Connect (OSTI)

    Pustiowski, Jens; Mller, Kai; Bichler, Max; Koblmller, Gregor; Finley, Jonathan J.; Wixforth, Achim; Krenner, Hubert J.

    2015-01-05

    We demonstrate tuning of single quantum dot emission lines by the combined action of the dynamic acoustic field of a radio frequency surface acoustic wave and a static electric field. Both tuning parameters are set all-electrically in a LiNbO{sub 3}-GaAs hybrid device. The surface acoustic wave is excited directly on the strong piezoelectric LiNbO{sub 3} onto which a GaAs-based p-i-n photodiode containing a single layer of quantum dots was epitaxially transferred. We demonstrate dynamic spectral tuning with bandwidths exceeding 3?meV of single quantum dot emission lines due to deformation potential coupling. The center energy of the dynamic spectral oscillation can be independently programmed simply by setting the bias voltage applied to the diode.

  10. Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

    SciTech Connect (OSTI)

    Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko; Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel; Garcia, Alipio

    2009-06-08

    We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

  11. Fabrication and Characterization of a Single Hole Transistor in p-type GaAs/AlGaAs Heterostructures

    SciTech Connect (OSTI)

    Tracy, Lisa A; Reno, John L.; Hargett, Terry W.

    2015-09-01

    Most spin qubit research to date has focused on manipulating single electron spins in quantum dots. However, hole spins are predicted to have some advantages over electron spins, such as reduced coupling to host semiconductor nuclear spins and the ability to control hole spins electrically using the large spin-orbit interaction. Building on recent advances in fabricating high-mobility 2D hole systems in GaAs/AlGaAs heterostructures at Sandia, we fabricate and characterize single hole transistors in GaAs. We demonstrate p-type double quantum dot devices with few-hole occupation, which could be used to study the physics of individual hole spins and control over coupling between hole spins, looking towards eventual applications in quantum computing. Intentionally left blank

  12. Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets

    SciTech Connect (OSTI)

    Chu, Kuei-Yi; Chiang, Meng-Hsueh Cheng, Shiou-Ying; Liu, Wen-Chau

    2012-02-15

    Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

  13. Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Edmunds, C.; Malis, O.; Shao, J.; Shirazi-HD, M.; Manfra, M. J.

    2014-07-14

    We demonstrate THz intersubband absorption (15.626.1?meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14?meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a??40% reduction in the linewidth (from roughly 8 to 5?meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

  14. High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

    SciTech Connect (OSTI)

    Young, N. G. Farrell, R. M.; Iza, M.; Speck, J. S.; Perl, E. E.; Keller, S.; Bowers, J. E.; Nakamura, S.; DenBaars, S. P.

    2014-04-21

    We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

  15. Rapid microwave hydrothermal synthesis of ZnGa{sub 2}O{sub 4} with high photocatalytic activity toward aromatic compounds in air and dyes in liquid water

    SciTech Connect (OSTI)

    Sun Meng; Li Danzhen; Zhang Wenjuan; Chen Zhixin; Huang Hanjie; Li Wenjuan; He Yunhui; Fu Xianzhi

    2012-06-15

    ZnGa{sub 2}O{sub 4} was synthesized from Ga(NO{sub 3}){sub 3} and ZnCl{sub 2} via a rapid and facile microwave-assisted hydrothermal method. The photocatalytic properties of the as-prepared ZnGa{sub 2}O{sub 4} were evaluated by the degradation of pollutants in air and aqueous solution under ultraviolet (UV) light illumination. The results demonstrated that ZnGa{sub 2}O{sub 4} had exhibited efficient photocatalytic activities higher than that of commercial P25 (Degussa Co.) in the degradation of benzene, toluene, and ethylbenzene, respectively. In the liquid phase degradation of dyes (methyl orange, Rhodamine B, and methylene blue), ZnGa{sub 2}O{sub 4} has also exhibited remarkable activities higher than that of P25. After 32 min of UV light irradiation, the decomposition ratio of methyl orange (10 ppm, 150 mL) over ZnGa{sub 2}O{sub 4} (0.06 g) was up to 99%. The TOC tests revealed that the mineralization ratio of MO (10 ppm, 150 mL) was 88.1% after 90 min of reaction. A possible mechanism of the photocatalysis over ZnGa{sub 2}O{sub 4} was also proposed. - Graphical abstract: In the degradation of RhB under UV light irradiation, ZnGa{sub 2}O{sub 4} had exhibited efficient photo-activity, and after only 24 min of irradiation the decomposition ratio was up to 99.8%. Highlights: Black-Right-Pointing-Pointer A rapid and facile M-H method to synthesize ZnGa{sub 2}O{sub 4} photocatalyst. Black-Right-Pointing-Pointer The photocatalyst exhibits high activity toward benzene and dyes. Black-Right-Pointing-Pointer The catalyst possesses more surface hydroxyl sites than TiO{sub 2} (P25). Black-Right-Pointing-Pointer Deep oxidation of different aromatic compounds and dyes over catalyst.

  16. Corrective Action Plan for Corrective Action Unit 262: Area 25 Septic Systems and Underground Discharge Point, Nevada Test Site, Nevada

    SciTech Connect (OSTI)

    K. B. Campbell

    2002-06-01

    This Corrective Action Plan (CAP) provides selected corrective action alternatives and proposes the closure methodology for Corrective Action Unit (CAU) 262, Area 25 Septic Systems and Underground Discharge Point. CAU 262 is identified in the Federal Facility Agreement and Consent Order (FFACO) of 1996. Remediation of CAU 262 is required under the FFACO. CAU 262 is located in Area 25 of the Nevada Test Site (NTS), approximately 100 kilometers (km) (62 miles [mi]) northwest of Las Vegas, Nevada. The nine Corrective Action Sites (CASs) within CAU 262 are located in the Nuclear Rocket Development Station complex. Individual CASs are located in the vicinity of the Reactor Maintenance, Assembly, and Disassembly (R-MAD); Engine Maintenance, Assembly, and Disassembly (E-MAD); and Test Cell C compounds. CAU 262 includes the following CASs as provided in the FFACO (1996); CAS 25-02-06, Underground Storage Tank; CAS 25-04-06, Septic Systems A and B; CAS 25-04-07, Septic System; CAS 25-05-03, Leachfield; CAS 25-05-05, Leachfield; CAS 25-05-06, Leachfield; CAS 25-05-08, Radioactive Leachfield; CAS 25-05-12, Leachfield; and CAS 25-51-01, Dry Well. Figures 2, 3, and 4 show the locations of the R-MAD, the E-MAD, and the Test Cell C CASs, respectively. The facilities within CAU 262 supported nuclear rocket reactor engine testing. Activities associated with the program were performed between 1958 and 1973. However, several other projects used the facilities after 1973. A significant quantity of radioactive and sanitary waste was produced during routine operations. Most of the radioactive waste was managed by disposal in the posted leachfields. Sanitary wastes were disposed in sanitary leachfields. Septic tanks, present at sanitary leachfields (i.e., CAS 25-02-06,2504-06 [Septic Systems A and B], 25-04-07, 25-05-05,25-05-12) allowed solids to settle out of suspension prior to entering the leachfield. Posted leachfields do not contain septic tanks. All CASs located in CAU 262 are inactive or abandoned. However, some leachfields may still receive liquids from runoff during storm events. Results from the 2000-2001 site characterization activities conducted by International Technology (IT) Corporation, Las Vegas Office are documented in the Corrective Action Investigation Report for Corrective Action Unit 262: Area 25 Septic Systems and Underground Discharge Point, Nevada Test Site, Nevada. This document is located in Appendix A of the Corrective Action Decision Document for CAU 262. Area 25 Septic Systems and Underground Discharge Point, Nevada Test Site, Nevada. (DOE/NV, 2001).

  17. Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

    SciTech Connect (OSTI)

    Hu, J. Groeseneken, G.; Stoffels, S.; Lenci, S.; Venegas, R.; Decoutere, S.; Bakeroot, B.

    2015-02-23

    This paper presents a combined technique of high voltage off-state stress and current transient measurements to investigate the trapping/de-trapping characteristics of Au-free AlGaN/GaN Schottky barrier diodes. The device features a symmetric three-terminal structure with a central anode contact surrounded by two separate cathodes. Under the diode off-state stress conditions, the two separate cathodes were electrically shorted. The de-trapping dynamics was studied by monitoring the recovery of the two-dimensional electron gas (2DEG) current at different temperatures by applying 0.5?V at cathode 2 while grounding cathode 1. During the recovery, the anode contact acts as a sensor of changes in diode leakage current. This leakage variation was found to be mainly due to the barrier height variation. With this method, the energy level and capture cross section of different traps in the AlGaN/GaN Schottky barrier diode can be extracted. Furthermore, the physical location of different trapping phenomena is indicated by studying the variation of the diode leakage current during the recovery. We have identified two distinct trapping mechanisms: (i) electron trapping at the AlGaN surface in the vicinity of the Schottky contact which results in the leakage reduction (barrier height ?{sub B} increase) together with R{sub ON} degradation; (ii) the electron trapping in the GaN channel layer which partially depletes the 2DEG. The physical origin of the two different traps is discussed in the text.

  18. InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

    SciTech Connect (OSTI)

    Alonso-lvarez, D.; Thomas, T.; Fhrer, M.; Hylton, N. P.; Ekins-Daukes, N. J.; Lackner, D.; Philipps, S. P.; Bett, A. W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.

    2014-08-25

    Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6 misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1??s, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

  19. Design of a GaAs/Ge solar array for unmanned aerial vehicles

    SciTech Connect (OSTI)

    Scheiman, D.A.; Colozza, A.J.; Brinker, D.J.; Bents, D.J.

    1994-12-31

    Unmanned Aerial Vehicles (UAV) are being proposed for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration airplane. Due to the weight, speed, and altitude constraints imposed on such aircraft, solar array generated electric power is a viable alternative to air-breathing engines. Development of such aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) is currently building a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office. Expected completion of the plane is early 1995, with the airplane currently undergoing flight testing using battery power.

  20. Design of a GaAs/Ge solar array for unmanned aerial vehicles

    SciTech Connect (OSTI)

    Scheiman, D.A.; Brinker, D.J.; Bents, D.J.; Colozza, A.J.

    1995-03-01

    Unmanned Aerial Vehicles (UAV) are being proposed for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration airplane. Due to the weight, speed, and altitude constraints imposed on such aircraft, solar array generated electric power is a viable alternative to air-breathing engines. Development of such aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) is currently building a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office. Expected completion of the plane is early 1995, with the airplane currently undergoing flight testing using battery power.

  1. Defect-Reduction Mechanism for Improving Radiative Efficiency in InGaN/GaN Light-Emitting Diodes using InGaN Underlayers

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Armstrong, Andrew M.; Bryant, Benjamin N.; Crawford, Mary H.; Koleske, Daniel D.; Lee, Stephen R.; Wierer, Jr., Jonathan J.

    2015-04-01

    The influence of a dilute InxGa1-xN (x~0.03) underlayer (UL) grown below a single In0.16Ga0.84N quantum well (SQW), within a light-emitting diode(LED), on the radiative efficiency and deep level defect properties was studied using differential carrier lifetime (DCL) measurements and deep level optical spectroscopy (DLOS). DCL measurements found that inclusion of the UL significantly improved LED radiative efficiency. At low current densities, the non-radiative recombination rate of the LED with an UL was found to be 3.9 times lower than theLED without an UL, while the radiative recombination rates were nearly identical. This, then, suggests that the improved radiative efficiency resultedmore » from reduced non-radiative defect concentration within the SQW. DLOS measurement found the same type of defects in the InGaN SQWs with and without ULs. However, lighted capacitance-voltage measurements of the LEDs revealed a 3.4 times reduction in a SQW-related near-mid-gap defect state for the LED with an UL. Furthermore, quantitative agreement in the reduction of both the non-radiative recombination rate (3.9×) and deep level density (3.4×) upon insertion of an UL corroborates deep level defect reduction as the mechanism for improved LED efficiency.« less

  2. Charge and fluence lifetime measurements of a dc high voltage GaAs photogun at high average current

    SciTech Connect (OSTI)

    J. Grames, R. Suleiman, P.A. Adderley, J. Clark, J. Hansknecht, D. Machie, M. Poelker, M.L. Stutzman

    2011-04-01

    GaAs-based dc high voltage photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed high average current facilities that must operate at tens of milliamperes or more. This paper describes techniques to maintain good vacuum while delivering beam, and techniques that minimize the ill effects of ion bombardment, the dominant mechanism that reduces photocathode yield of a GaAs-based dc high voltage photogun. Experimental results presented here demonstrate enhanced lifetime at high beam currents by: (a) operating with the drive laser beam positioned away from the electrostatic center of the photocathode, (b) limiting the photocathode active area to eliminate photoemission from regions of the photocathode that do not support efficient beam delivery, (c) using a large drive laser beam to distribute ion damage over a larger area, and (d) by applying a relatively low bias voltage to the anode to repel ions created within the downstream beam line. A combination of these techniques provided the best total charge extracted lifetimes in excess of 1000 C at dc beam currents up to 9.5 mA, using green light illumination of bulk GaAs inside a 100 kV photogun.

  3. Portsmouth Proposed Plan for the Process Buildings and Complex Facilities Decontamination and Decommissioning Evaluation Project

    Broader source: Energy.gov [DOE]

    DOE has evaluated alternatives for demolishing the buildings at the Portsmouth Site. Two remedial alternatives were developed for consideration. This Proposed Plan describes the required no-action alternative (Alternative 1) and a D&D alternative (Alternative 2). The preferred alternative is Alternative 2, controlled demolition of the process buildings and complex facilities.

  4. Corrective Action Plan for Corrective Action Unit 424: Area 3 Landfill Complex, Tonopah Test Range, Nevada

    SciTech Connect (OSTI)

    Bechtel Nevada

    1998-08-31

    This corrective action plan provides the closure implementation methods for the Area 3 Landfill Complex, Corrective Action Unit (CAU) 424, located at the Tonopah Test Range. The Area 3 Landfill Complex consists of 8 landfill sites, each designated as a separate corrective action site.

  5. Properties of H, O and C in GaN

    SciTech Connect (OSTI)

    Pearton, S.J.; Abernathy, C.R.; Lee, J.W.

    1996-04-01

    The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

  6. Multiscale twin hierarchy in NiMnGa shape memory alloys with...

    Office of Scientific and Technical Information (OSTI)

    Multiscale twin hierarchy in NiMnGa shape memory alloys with Fe and Cu Citation Details In-Document Search Title: Multiscale twin hierarchy in NiMnGa shape memory alloys with Fe ...

  7. Surface Chemistry of GaP(001) and InP(001) in Contact with Water...

    Office of Scientific and Technical Information (OSTI)

    Surface Chemistry of GaP(001) and InP(001) in Contact with Water Citation Details In-Document Search Title: Surface Chemistry of GaP(001) and InP(001) in Contact with Water You...

  8. ScGaN alloy growth by molecular beam epitaxy: Evidence for a...

    Office of Scientific and Technical Information (OSTI)

    ScGaN alloy growth by molecular beam epitaxy: Evidence for a metastable layered hexagonal phase Citation Details In-Document Search Title: ScGaN alloy growth by molecular beam...

  9. Improved InGaN LED System Efficacy and Cost via Droop Reduction...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Improved InGaN LED System Efficacy and Cost via Droop Reduction Improved InGaN LED System Efficacy and Cost via Droop Reduction Lead Performer: Lumileds, LLC - San Jose, CA DOE ...

  10. Ge doped GaN with controllable high carrier concentration for...

    Office of Scientific and Technical Information (OSTI)

    Ge doped GaN with controllable high carrier concentration for plasmonic applications Citation Details In-Document Search Title: Ge doped GaN with controllable high carrier...

  11. Bismuth-induced phase control of GaAs nanowires grown by molecular...

    Office of Scientific and Technical Information (OSTI)

    Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy Citation Details In-Document Search Title: Bismuth-induced phase control of GaAs nanowires grown by ...

  12. Testing a GaAs cathode in SRF gun

    SciTech Connect (OSTI)

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-03-28

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating gradient of the RF guns, potentially offering a long lived cathode with very low emittance. Testing this concept requires preparation of the cathode, transportation to the SRF gun and evaluation of the performance of the cathode and the gun at cryogenic temperatures. In our work at BNL, we successfully activated the bulk GaAs in the preparation chamber. The highest quantum efficient was 10% at 532 nm that fell to 0.5% after 100 hours. We explored three different ways to activate the GaAs. We verified that the GaAs photocathode remains stable for 30 hours in a 10{sup -11} Torr vacuum. Passing the photocathode through the low 10{sup -9} Torr transfer section in several seconds caused the QE to drop to 0.8%. The photocathode with 0.8% QE can be tested for the SRF gun. The gun and beam pipe were prepared and assembled. After baking at 200 C baking, the vacuum of the gun and beam pipe can sustain a low 10{sup -11} Torr at room temperature. The final test to extract electrons from the gun is ongoing. In this paper, we discuss our progress with this SRF gun and the results of the photocathode in preparation chamber and in magnet transfer line.

  13. Quaternary InGaAsSb Thermophotovoltaic Diodes

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  14. Annual status report on the Uranium Mill Tailings Remedial Action Program

    SciTech Connect (OSTI)

    Not Available

    1985-12-01

    FY 1985 project accomplishments include: completed 90% of the processing site remedial actions at Canonsburg, Pennsylvania, and initiated remedial actions at Salt Lake City, Utah, and Shiprock, New Mexico; awarded remedial action contracts on 329 vicinity properties at seven designated locations and completed survey and inclusion activities on a total of 1620 vicinity properties; published the Environmental Assessment (EA) for Lakeview, Oregon, issued the draft and prepared the final Environmental Impact Statement (EIS) for Durango, Colorado; completed the Remedial Action Plan (RAP) for Lakeview, Oregon, and prepared the draft RAP for Durango, Colorado; executed cooperative agreements with Idaho, New Mexico, and the Navajo Nation/Hopi Tribe; executed a Memorandum of Understanding with the Nuclear Regulatory Commission; and developed proposed UMTRA Project design review criteria between DOE and the NRC.

  15. Removal Action Plan for the Accelerated Retrieval Project for a Described Area within Pit 4

    SciTech Connect (OSTI)

    A. M. Tyson

    2006-08-01

    This Removal Action Plan documents the plan for implementation of the Comprehensive Environmental Response, Compenstion, and Liability Act non-time-critical removal action to be performed by the Accelerated Retrieval Project. The focus of the action is the limited excavation and retrieval of selected waste streams from a designated portion of the Radioactive Waste Management Complex Subsurface Disposal Area that are contaminated with volatile organic compounds, isotopes of uranium, or transuranic radionuclides. The selected retrieval area is approximately 0.2 ha (1/2 acre) and is located in the eastern portion of Pit 4. The proposed project is referred to as the Accelerated Retrieval Project. This Removal Action Plan details the major work elements, operations approach, and schedule, and summarizes the environmental, safety and health, and waste management considerations associated with the project.

  16. Environmental assessment of remedial action at the Naturita Uranium processing site near Naturita, Colorado. Revision 1

    SciTech Connect (OSTI)

    Not Available

    1993-08-01

    The proposed remedial action for the Naturita processing site is relocation of the contaminated materials and debris to the Dry Flats disposal site, 6 road miles (mi) [ 1 0 kilometers (km)] to the southeast. At the disposal site, the contaminated materials would be stabilized and covered with layers of earth and rock. The proposed disposal site is on land administered by the Bureau of Land Management (BLM) and used primarily for livestock grazing. The final disposal site would cover approximately 57 ac (23 ha), which would be permanently transferred from the BLM to the DOE and restricted from future uses. The remedial action activities would be conducted by the DOE`s Uranium Mill Tailings Remedial Action (UMTRA) Project. The remedial action would result in the loss of approximately 164 ac (66 ha) of soils, but 132 ac (53 ha) of these soils are contaminated and cannot be used for other purposes. Another 154 ac (62 ha) of soils would be temporarily disturbed. Approximately 57 ac (23 ha) of open range land would be permanently removed from livestock grazing and wildlife use. The removal of the contaminated materials would affect the 1 00-year floodplain of the San Miguel River and would result in the loss of riparian habitat along the river. The southwestern willow flycatcher, a Federal candidate species, may be affected by the remedial action, and the use of water from the San Miguel River ``may affect`` the Colorado squawfish, humpback chub, bonytail chub, and razorback sucker. Traffic levels on State Highways 90 and 141 would be increased during the remedial action, as would the noise levels along these transportation routes. Measures for mitigating the adverse environmental impacts of the proposed remedial action are discussed in Section 6.0 of this environmental assessment (EA).

  17. Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Bia?ek, M. Witowski, A. M.; Grynberg, M.; ?usakowski, J.; Orlita, M.; Potemski, M.; Czapkiewicz, M.; Umansky, V.

    2014-06-07

    In order to characterize magnetic field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the magnetoplasmon resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.

  18. High 400?C operation temperature blue spectrum concentration solar junction in GaInN/GaN

    SciTech Connect (OSTI)

    Zhao, Liang; Detchprohm, Theeradetch; Wetzel, Christian

    2014-12-15

    Transparent wide gap junctions suitable as high temperature, high flux topping cells have been achieved in GaInN/GaN by metal-organic vapor phase epitaxy. In structures of 25 quantum wells (QWs) under AM1.5G illumination, an open circuit voltage of 2.1?V is achieved. Of the photons absorbed in the limited spectral range of <450?nm, 64.2% are converted to electrons collected at the contacts under zero bias. At a fill factor of 45%, they account for a power conversion efficiency of38.6%. Under concentration, the maximum output power density per sun increases from 0.49?mW/cm{sup 2} to 0.51?mW/cm{sup 2} at 40?suns and then falls 0.42?mW/cm{sup 2} at 150?suns. Under external heating, a maximum of 0.59?mW/cm{sup 2} is reached at 250?C. Even at 400?C, the device is fully operational and exceeds room temperature performance. A defect analysis suggests that significantly higher fill factors and extension into longer wavelength ranges are possible with further development. The results prove GaInN/GaN QW solar junctions a viable and rugged topping cell for concentrator photovoltaics with minimal cooling requirements. By capturing the short range spectrum, they reduce the thermal load to any conventional cells stacked behind.

  19. Call for General User Proposals - Upcoming Deadline

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Call for General User Proposals - Upcoming Deadline Call for General User Proposals - Upcoming Deadline Print The User Office is accepting new General User Proposals (GUPs) from scientists who wish to conduct research at the ALS in the 2016-2 July-Dec cycle. PROPOSAL SUBMISSION DEADLINE: March 2, 2016 Please log in to ALSHub to submit a new GUP or to make a Beam Time Request (BTR) on an existing active proposal. Users are reminded that they need to have an ALSHub account to submit proposals, and

  20. Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    SciTech Connect (OSTI)

    Cheng, Junjie; Li, Jiadong; Miao, Bin; Wu, Dongmin; Wang, Jine; Pei, Renjun; Wu, Zhengyan

    2014-08-25

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup ?14} to 10{sup ?8} M and a detection limit below 10{sup ?14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

  1. President's Climate Action Plan | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Solar Energy in the United States » President's Climate Action Plan President's Climate Action Plan President’s Climate Action Plan In June 2013, President Obama put forward a broad-based plan to cut the carbon pollution that causes climate change and affects public health. Cutting carbon pollution will help spark business innovation to modernize our power plants, resulting in cleaner forms of American-made energy that will create good jobs and cut our dependence on foreign oil. Combined

  2. GaN Initiative for Grid Applications (GIGA)

    SciTech Connect (OSTI)

    Turner, George

    2015-07-03

    For nearly 4 years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 ?m, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New Normally-Off device architectures were demonstrated for safe operation of power electronics circuits. The trade-offs between lateral and vertical devices were explored, with the conclusion that lateral devices are superior for fundamental thermal reasons, as well as for the demonstration of future generations of monolithic power circuits. As part of the materials and device investigations breakdown mechanisms in GaN-on-Si structures were fully characterized and effective electric field engineering was recognized as critical for achieving even higher voltage operation. Improved device contact technology was demonstrated, including the first gold-free metallizations (to enable processing in CMOS foundries) while maintaining low specific contact resistance needed for high-power operation and 5-order-of magnitude improvement in device leakage currents (essential for high power operation). In addition, initial GaN-on-Si epitaxial growth was performed on 8/200 mm Si starting substrates.

  3. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992

    SciTech Connect (OSTI)

    Venkatasubramanian, R.

    1993-01-01

    This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The ``cycled`` organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al{sub 0.34}Ga{sub 0.66}As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  4. Absorption enhancement through Fabry-Prot resonant modes in a 430?nm thick InGaAs/GaAsP multiple quantum wells solar cell

    SciTech Connect (OSTI)

    Behaghel, B.; Tamaki, R.; Watanabe, K.; Sodabanlu, H.; Vandamme, N.; Dupuis, C.; Bardou, N.; Cattoni, A.; Okada, Y.; Sugiyama, M.; Collin, S.; Guillemoles, J.-F.

    2015-02-23

    We study light management in a 430?nm-thick GaAs p-i-n single junction solar cell with 10 pairs of InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the external quantum efficiency below GaAs bandgap by a factor of four through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 10% conversion efficiency. We demonstrate numerically that this promising result can be further improved by anti-reflection layers. This study paves the way to very thin MQWs solar cells.

  5. Environmental assessment -- Proposed neutrino beams at the Main Injector project

    SciTech Connect (OSTI)

    1997-12-01

    The US Department of Energy (DOE) proposes to build a beamline on the Fermi National Accelerator Laboratory (Fermilab) site to accommodate an experimental research program in neutrino physics. The proposed action, called Neutrino Beams at the Main Injector (NuMI), is to design, construct, operate and decommission a facility for producing and studying a high flux beam of neutrinos in the energy range of 1 to 40 GeV (1 GeV is one billion or 10{sup 9} electron volts). The proposed facility would initially be dedicated to two experiments, COSMOS (Cosmologically Significant Mass Oscillations) and MINOS (Main Injector Neutrino Oscillation Search). The neutrino beam would pass underground from Fermilab to northern Minnesota. A tunnel would not be built in this intervening region because the neutrinos easily pass through the earth, not interacting, similar to the way that light passes through a pane of glass. The beam is pointed towards the MINOS detector in the Soudan Underground Laboratory in Minnesota. Thus, the proposed project also includes construction, operation and decommissioning of the facility located in the Soudan Underground Laboratory in Minnesota that houses this MINOS detector. This environmental assessment (EA) has been prepared by the US Department of Energy (DOE) in accordance with the DOE`s National Environmental Policy Act (NEPA) Implementing Procedures (10 CFR 1021). This EA documents DOE`s evaluation of potential environmental impacts associated with the proposed construction and operation of NuMI at Fermilab and its far detector facility located in the Soudan Underground Laboratory in Minnesota. Any future use of the facilities on the Fermilab site would require the administrative approval of the Director of Fermilab and would undergo a separate NEPA review. Fermilab is a Federal high-energy physics research laboratory in Batavia, Illinois operated on behalf of the DOE by Universities Research Association, Inc.

  6. Proposal Form Guidelines | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Form Guidelines Please read the Proposal Form Description and Guidelines entirely before submitting a proposal (pdf version). You must register online through the User Facility Registration System BEFORE submitting a proposal. All individuals coming to Argonne must register, receive a badge number, and receive access permission for arrival. You will receive a badge number by e-mail. To log on to the Online User Proposal System for the first time, enter your badge number and also use your badge

  7. Proposal Process in Brief | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Process in Brief The international scientific community can perform research at the CNM through a general user access program. Proposals are submitted through a online proposal system. Proposals are peer-reviewed, rated, and time is allocated on the basis of these reviews by appropriate allocation committees. How to Submit a Proposal You must register online through the User Facility Registration System. Study the CNM Research Groups and identify the capabilities you plan to use. Consult the

  8. Proposal Writing Guidelines and Scoring Criteria

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposal Writing Guidelines and Scoring Criteria Print Principal Investigator The proposal form asks for the names and contact information of the experiment leader completing the form and the Principal Investigator (PI). The PI is the leader and the individual responsible for the group, and the experiment leader is often the person completing the proposal form. In this way the ALS would like to encourage postdocs and students to gain experience in submitting proposals as the experiment leader,

  9. 2013 INCITE Proposals due June 27

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    INCITE Proposals 2013 INCITE Proposals due June 27 June 15, 2012 by Francesca Verdier The Innovative and Novel Computational Impact on Theory and Experiment (INCITE) program promotes transformational advances in science and technology through large allocations of computer time, supporting resources, and data storage at the Argonne and Oak Ridge Leadership Computing Facilities. 2013 proposals are due June 27. See 2013 INCITE Call for Proposals. Subscribe via RSS Subscribe Browse by Date January

  10. Return on investment (ROI) proposal preparation guide

    SciTech Connect (OSTI)

    VALERO, O.J.

    1998-10-09

    The ROI Proposal Preparation Guide is a tool to assist Hanford waste generators in preparing ROI proposal forms for submittal to Department of Energy, Richland Operations Office (DOE/RL) for funding. The guide describes the requirements for submitting an ROI proposal and provides examples of completed ROI forms. The intent is to assist waste generators in identifying projects that meet the criteria, provide information necessary to complete the ROI forms, and submit a proposal that is eligible to receive funding.

  11. Evaluation and Selection of CSES Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Evaluating, Selecting Proposals Evaluation and Selection of CSES Proposals High quality, cutting-edge science in the areas of astrophysics, space physics, solid planetary geoscience, and climate science. Contact Director Reiner Friedel (505) 665-1936 Email Professional Staff Assistant Georgia D. Sanchez (505) 665-0855 Email Geophysics W. Scott Baldridge (505) 667-4338 Email New student and postdoc proposals All new proposals undergo peer review by scientists in the broad research community who

  12. DOE Proposes Higher Efficiency Standards for Refrigerators

    Broader source: Energy.gov [DOE]

    New Proposed Standards for Residential Refrigerators and Freezers to Lower Energy Use by as much as Twenty-Five Percent

  13. Action South Facing | Open Energy Information

    Open Energy Info (EERE)

    search Name: Action South Facing Place: United Kingdom Zip: HP2 6HG Sector: Buildings Product: UK-based installer of grid-connected PV systems on commercial buildings in...

  14. Federal Actions to Address Impacts of Uranium

    Office of Legacy Management (LM)

    Federal Actions to Address Impacts of Uranium Contamination in the Navajo Nation 2014 Page | i TABLE OF CONTENTS Executive Summary ....................................................................................................................... 1 Introduction .................................................................................................................................... 2 Summary of Work Completed 2008-2012

  15. Green Building Action Plan for State Facilities

    Broader source: Energy.gov [DOE]

    On December 14, 2005, California’s governor signed Executive Order S-20-04, creating a Green Building Action Plan to improve the energy performance of all state buildings. The order established...

  16. International Program Action Table - October 2012 | Department of Energy

    Energy Savers [EERE]

    Communication & Engagement » International Programs » International Program Action Table - October 2012 International Program Action Table - October 2012 International Program Action Table - October 2012 PDF icon EM International Program Action Table - October 2012 More Documents & Publications EM International Program Action Table - June 2014 Across the Pond Newsletter Issue 4 Across the Pond Newsletter Issue 6

  17. EM International Program Action Table - June 2014 | Department of Energy

    Energy Savers [EERE]

    Action Table - June 2014 EM International Program Action Table - June 2014 EM International Program Action Table - June 2014 PDF icon EM International Program Action Table - June 2014 More Documents & Publications International Program Action Table - October 2012 Across the Pond Newsletter Issue 9 Across the Pond Newsletter Issue 3

  18. Easy Energy Action Plan Checklist | Department of Energy

    Office of Environmental Management (EM)

    Easy Energy Action Plan Checklist Easy Energy Action Plan Checklist 10 Simple Ways To Use Energy Wisely PDF icon EnergyActionChecklist_English.pdf PDF icon EnergyActionChecklist_Spanish.pdf More Documents & Publications Ahorre Energía Get Current: Switch on Clean Energy Activity Book Easy Energy Action Plan Checklist Conocimiento de Energia

  19. Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN

    Office of Scientific and Technical Information (OSTI)

    nanostructure arrays on GaN/sapphire template (Journal Article) | SciTech Connect Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template Citation Details In-Document Search Title: Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template Authors: Sundaram, S. [1] ; Puybaret, R. [2] ; El Gmili, Y. [1] ; Li, X. [2] ; Bonanno, P. L. [1] ; Pantzas, K. [3] Search SciTech

  20. ESR Detection of optical dynamic nuclear polarization in GaAs/Al{sub

    Office of Scientific and Technical Information (OSTI)

    x}Ga{sub 1-x}As quantum wells at unity filling factor in the quantum Hall effect (Journal Article) | SciTech Connect ESR Detection of optical dynamic nuclear polarization in GaAs/Al{sub x}Ga{sub 1-x}As quantum wells at unity filling factor in the quantum Hall effect Citation Details In-Document Search Title: ESR Detection of optical dynamic nuclear polarization in GaAs/Al{sub x}Ga{sub 1-x}As quantum wells at unity filling factor in the quantum Hall effect This paper presents a study of the

  1. Conductivity based on selective etch for GaN devices and applications thereof

    DOE Patents [OSTI]

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  2. Microsoft Word - ProjectProposalForm.dotx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposal Form Center for Advanced Microstructures and Devices, Louisiana State University, 6980 Jefferson Hwy., Baton Rouge, LA 70806 1. Project Title: __________________________________________________________________________________________ Anticipated Completion Date:__________________ 2. Type of Proposal: ___ New Project ___ Renewal 3. Type of Project: ___ Single Experiment: 4 eight-hour shifts maximum. ___ Program (These proposals will be referred.) 4. P.I.:

  3. Research Proposal Milestones | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Proposal Milestones Research Proposal Milestones Research Proposal Milestones, from the U.S. Department of Energy's Postdoctoral Research Awards program. Office spreadsheet icon template_for_milestones.xls More Documents & Publications Template for Milestones ESPC ENABLE ACQUISITION PLAN TEMPLATE Dynamically Responsive Infrared Window Coatings

  4. CPR_RemedialAction_flowchart_final.indd

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    characterize site STOP no further action needed No Yes Is development successful? 4b No Yes Is it appropriate to invest time and money in new treatment technologies? (consider risk) 4a Yes No Are treatment technologies available? 4 Yes No Are retrieval technologies available? 3 Yes No Does the waste site require action? (consider risk) 2 Has the waste site been adequately characterized? 1 Yes No Yes No Are disposal alternatives available? 5 Yes No Are retrieval, treatment and disposal

  5. Corrective Action Plan for Environmenta' Management Headquarters

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Corrective Action Plan for Environmenta' Management Headquarters Phase 2: Radiological Release Event at the Waste Isolation Pilot Plant on February 14~ 2014 Washington, DC 20585 August 2015 Corrective Action Plan for Environmental Management Headquarters Phase 2: Radiological Release Event at the Waste Isolation Pilot Plant on February 14, 2014 Deputy Assistant Secretary for Safety, Security, and Quality Programs Environmental Management Approved by: Monica Regalbuto Assistant Secretary for

  6. Appendix IV Closed Corrective Action Units

    National Nuclear Security Administration (NNSA)

    IV Closed Corrective Action Units Revision No.: 26 July 2009 Federal Facility Agreement and Consent Order (FFACO) FFACO Appendix IV - Closed Corrective Action Units Owner: NNSA / Industrial Sites - DP CAU Number: 34 Area 3 Contaminated Waste Sites CAU Notice of Completion: 6/25/2002 Submitted as CADD/CR. CR regulatory milestone not established prior to CADD/CR submittal. CAS Number CAS Description Functional Category Map Name General Location Mud Pit Mud Disposal Crater Yucca Flat U-3ag at Mud

  7. Nuclear facility decommissioning and site remedial actions

    SciTech Connect (OSTI)

    Owen, P.T.; Knox, N.P.; Ferguson, S.D.; Fielden, J.M.; Schumann, P.L.

    1989-09-01

    The 576 abstracted references on nuclear facility decommissioning, uranium mill tailings management, and site remedial actions constitute the tenth in a series of reports prepared annually for the US Department of Energy's Remedial Action Programs. Citations to foreign and domestic literature of all types--technical reports, progress reports, journal articles, symposia proceedings, theses, books, patents, legislation, and research project descriptions--have been included. The bibliography contains scientific, technical, economic, regulatory, and legal information pertinent to the US Department of Energy's Remedial Action Programs. Major sections are (1) Surplus Facilities Management Program, (2) Nuclear Facilities Decommissioning, (3) Formerly Utilized Sites Remedial Action Program, (4) Facilities Contaminated with Naturally Occurring Radionuclides, (5) Uranium Mill Tailings Remedial Action Program, (6) Uranium Mill Tailings Management, (7) Technical Measurements Center, and (8) General Remedial Action Program Studies. Within these categories, references are arranged alphabetically by first author. Those references having no individual author are listed by corporate affiliation or by publication description. Indexes are provided for author, corporate affiliation, title work, publication description, geographic location, subject category, and keywords.

  8. Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga2Se3/Si(001)

    SciTech Connect (OSTI)

    Yitamben, E.N.; Arena, D.; Lovejoy, T.C.; Pakhomov, A.B.; Heald, S.M.; Negusse, E.; Ohuchi, F.S.; Olmstead, M.A.

    2011-01-28

    Chromium-doped gallium sesquiselenide, Cr:Ga{sub 2}Se{sub 3}, is a member of a new class of dilute magnetic semiconductors exploiting intrinsic vacancies in the host material. The correlation among room-temperature ferromagnetism, surface morphology, electronic structure, chromium concentration, and local chemical and structural environments in Cr:Ga{sub 2}Se{sub 3} films grown epitaxially on silicon is investigated with magnetometry, scanning tunneling microscopy, photoemission spectroscopy, and x-ray absorption spectroscopy. Inclusion of a few percent chromium in Ga{sub 2}Se{sub 3} results in laminar, semiconducting films that are ferromagnetic at room temperature with a magnetic moment 4{micro}{sub B}/Cr. The intrinsic-vacancy structure of defected-zinc-blende {beta}-Ga{sub 2}Se{sub 3} enables Cr incorporation in a locally octahedral site without disrupting long-range order, determined by x-ray absorption spectroscopy, as well as strong overlap between Cr 3d states and the Se 4p states lining the intrinsic-vacancy rows, observed with photoemission. The highest magnetic moment per Cr is observed near the solubility limit of roughly one Cr per three vacancies. At higher Cr concentrations, islanded, metallic films result, with a magnetic moment that depends strongly on surface morphology. The effective valence is Cr{sup 3+} in laminar films, with introduction of Cr{sup 0} upon islanding. A mechanism is proposed for laminar films whereby ordered intrinsic vacancies mediate ferromagnetism.

  9. EIS-0030-S: Bonneville Power Administration Proposed FY 1980 Program, Facility Location Supplement, Northwest Montana/North Idaho Support and Libby Integration, Supplemental

    Broader source: Energy.gov [DOE]

    The Bonneville Power Administration developed this supplemental statement to evaluate the environmental impacts of proposed alternative actions to alternative actions intended to address the need for reliability of electrical service to loads in Northwest Montana and North Idaho and the need for integrating the generation being added at Libby Dam into the Federal Columbia River Power System.

  10. Gallium hole traps in irradiated KTiOPO{sub 4}:Ga crystals

    SciTech Connect (OSTI)

    Grachev, V.; Meyer, M.; Malovichko, G.; Hunt, A. W.

    2014-12-07

    Nominally pure and gallium doped single crystals of potassium titanyl phosphate (KTiOPO{sub 4}) have been studied by Electron Paramagnetic Resonance at low temperatures before and after irradiation. Irradiation with 20?MeV electrons performed at room temperature and liquid nitrogen temperature caused an appearance of electrons and holes. Gallium impurities act as hole traps in KTiOPO{sub 4} creating Ga{sup 4+} centers. Two different Ga{sup 4+} centers were observed, Ga1 and Ga2. The Ga1 centers are dominant in Ga-doped samples. For the Ga1 center, a superhyperfine structure with one nucleus with nuclear spin was registered and attributed to the interaction of gallium electrons with a phosphorus nucleus or proton in its surrounding. In both Ga1 and Ga2 centers, Ga{sup 4+} ions substitute for Ti{sup 4+} ions, but with a preference to one of two electrically distinct crystallographic positions (site selective substitution). The Ga doping eliminates one of the shortcomings of KTP crystalsionic conductivity of bulk crystals. However, this does not improve significantly the resistance of the crystals to electron and ?-radiation.

  11. Characterization and device performance of (AgCu)(InGa)Se2 absorber layers

    SciTech Connect (OSTI)

    Hanket, Gregory; Boyle, Jonathan H.; Shafarman, William N.

    2009-06-08

    The study of (AgCu)(InGa)Se2 absorber layers is of interest in that Ag-chalcopyrites exhibit both wider bandgaps and lower melting points than their Cu counterparts. (AgCu)(InGa)Se2 absorber layers were deposited over the composition range 0 < Ag/(Ag+Cu) < 1 and 0.3 < Ga/(In+Ga) < 1.0 using a variety of elemental co-evaporation processes. Films were found to be singlephase over the entire composition range, in contrast to prior studies. Devices with Ga content 0.3 < Ga/(In+Ga) <0.5 tolerated Ag incorporation up to Ag/(Ag+Cu) = 0.5 without appreciable performance loss. Ag-containing films with Ga/(In+Ga) = 0.8 showed improved device characteristics over Cu-only control samples, in particular a 30-40% increase in short-circuit current. An absorber layer with composition Ag/(Ag+Cu) = 0.75 and Ga/(In+Ga) = 0.8 yielded a device with VOC = 890 mV, JSC = 20.5mA/cm2, fill factor = 71.3%, and ? = 13.0%.

  12. Efficiency calculations of thin-film GaAs solar cells on Si substrates

    SciTech Connect (OSTI)

    Yamaguchi, M.; Amano, C.

    1985-11-01

    Dislocation effect upon the efficiency of single-crystal thin-film AlGaAs-GaAs heteroface solar cells on Si substrates is analyzed. Solar-cell properties are calculated based on a simple model; in the model, dislocations act as recombination centers to reduce the minority-carrier diffusion length in each layer and increase the space-charge layer recombination current. Numerical analysis is also carried out to optimize thin-film AlGaAs-GaAs heteroface solar-cell structures. The fabrication of thin-film AlGaAs-GaAs heteroface solar cells with a practical efficiency larger than 18% on Si substrates appears possible if the dislocation density in the thin-film GaAs layer is less than 10/sup 6/ cm/sup -2/.

  13. Optical and quantum efficiency analysis of (Ag,Cu)(In,Ga)Se2 absorber layers

    SciTech Connect (OSTI)

    Boyle, Jonathan; Hanket, Gregory; Shafarman, William

    2009-06-09

    (Ag,Cu)(In,Ga)Se2 thin films have been deposited by elemental co-evaporation over a wide range of compositions and their optical properties characterized by transmission and reflection measurements and by relative shift analysis of quantum efficiency device measurements. The optical bandgaps were determined by performing linear fits of (?h?)2 vs. h?, and the quantum efficiency bandgaps were determined by relative shift analysis of device curves with fixed Ga/(In+Ga) composition, but varying Ag/(Cu+Ag) composition. The determined experimental optical bandgap ranges of the Ga/(In+Ga) = 0.31, 0.52, and 0.82 groups, with Ag/(Cu+Ag) ranging from 0 to 1, were 1.19-1.45 eV, 1.32-1.56 eV, and 1.52-1.76 eV, respectively. The optical bowing parameter of the different Ga/(In+Ga) groups was also determined.

  14. Average Structure Evolution of ?-phase Pu-Ga Alloys

    SciTech Connect (OSTI)

    Smith, Alice Iulia; Page, Katharine L.; Gourdon, Olivier; Siewenie, Joan E.; Richmond, Scott; Saleh, Tarik A.; Ramos, Michael; Schwartz, Daniel S.

    2015-03-30

    [Full Text] Plutonium metal is a highly unusual element, exhibiting six allotropes at ambient pressure, from room temperature to its melting point. Many phases of plutonium metal are unstable with temperature, pressure, chemical additions, and time. This strongly affects structure and properties, and becomes of high importance, particularly when considering effects on structural integrity over long time periods. The fcc ?-phase deserves additional attention, not only in the context of understanding the electronic structure of Pu, but also as one of the few high-symmetry actinide phases that can be stabilized down to ambient pressure and room temperature by alloying it with trivalent elements. We will present results on recent work on aging of Pu-2at.%Ga and Pu-7at.%Ga alloys

  15. Method of plasma etching Ga-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  16. Method of plasma etching GA-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2013-01-01

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

  17. Formation and properties of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Lockwood, D.J.; Fraser, J.W.; Graham, M.J.; Isaacs, H.S.

    1996-06-01

    Porous structures on n-type GaAs (100) can be grown electrochemically in chloride-containing solutions. Crystallographic etching of the sample is a precursor stage of the attack. Polarization curves reveal the existanece of a critical onset potential for por formation (PFP). PFP is strongly dependent on the doping level of the sample and presence of surface defects. Good agreement between PFP and breakdown voltage of the space charge layer is found. Surface analysis by EDX, AES, and XPS show that the porous structure consists mainly of GaAs and that anion uptake in the structure can only observed after attackhas been initiated. Photoluminescence measurements reveal (under certain conditions) visible light emission from the porous structure.

  18. The transputer based GA. SP data acquisition system

    SciTech Connect (OSTI)

    Colombo, D.; Avano, B.; DePoli, M.; Maron, G. ); Negro, A.; Parlati, G. )

    1992-04-01

    In this paper, the new data acquisition for the GA.SP detector is presented. It is a distributed system based on a network of 40 T800 and T222 transputers linked to a VME system used for histogram storage. A 100 MBit/s FDDI ring connects the system to UNIX workstations used for the experiment control, histogram display and second level data analysis.

  19. Environmental assessment of remedial action at the Mexican Hat uranium mill tailings site, Mexican Hat, Utah. [Contains glossary

    SciTech Connect (OSTI)

    Not Available

    1987-10-01

    This document assesses the environmental impacts of the proposed remedial action at the Mexican Hat uranium mill tailings site located on the Navajo Reservation in southern Utah. The site covers 235 acres and contains 69 acres of tailings and several of the original mill structures. Remedial action must be performed in accordance with standards and with the concurrence of the US Nuclear Regulatory Commission and the Navajo Nation. The proposed action is to stabilize the tailings within the present tailings site by consolidating the tailings and associated contaminated soils into a recontoured pile. A radon barrier of compacted earth would be constructed over the pile, and various erosion control measures would be taken to assure the long-term stability of the pile. The no action alternative is also assessed in this document. 240 refs., 12 figs., 20 tabs.

  20. Ga lithography in sputtered niobium for superconductive micro and nanowires

    SciTech Connect (OSTI)

    Henry, M. David; Wolfley, Steve; Monson, Todd; Lewis, Rupert

    2014-08-18

    This work demonstrates the use of focused ion beam (FIB) implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12?nm deep with a 14?nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10??m by 10??m and 100??m by 100??m, demonstrate that doses above than 7.5??10{sup 15?}cm{sup ?2} at 30?kV provide adequate mask protection for a 205?nm thick, sputtered Nb film. The resolution of this dry lithographic technique is demonstrated by fabrication of nanowires 75?nm wide by 10??m long connected to 50??m wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature (T{sub c})?=?7.7?K was measured using a magnetic properties measurement system. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.

  1. Enforcement actions: Significant actions resolved material licensees. Semiannual progress report, July--December 1996

    SciTech Connect (OSTI)

    1997-04-01

    This compilation summarizes significant enforcement actions that have been resolved during the period and includes copies of letters, Notices, and Orders sent by the Nuclear Regulatory Commission to material licensees with respect to these enforcement actions. It is anticipated that the information in this publication will be widely disseminated to managers and employees engaged in activities licensed by the NRC, so that actions can be taken to improve safety by avoiding future violations similar to those described in this publication.

  2. Safety assessment for proposed pump mixing operations to mitigate episodic gas releases in tank 241-101-SY: Hanford Site, Richland, Washington

    SciTech Connect (OSTI)

    Lentsch, J.W., Westinghouse Hanford

    1996-05-16

    This safety assessment addresses each of the elements required for the proposed action to remove a slurry distributor and to install, operate, and remove a mixing pump in Tank 241-SY-101, which is located within the Hanford Site, Richland, Washington. The proposed action is required as part of an ongoing evaluation of various mitigation concepts developed to eliminate episodic gas releases that result in hydrogen concentrations in the tank dome space that exceed the lower flammability limit.

  3. Tonopah Test Range Summary of Corrective Action Units

    SciTech Connect (OSTI)

    Ronald B. Jackson

    2007-05-01

    Corrective Action Sites (CASs) and Corrective Action Units (CAUs) at the Tonopah Test Range (TTR) may be placed into three categories: Clean Closure/No Further Action, Closure in Place, or Closure in Progress.

  4. FY 2016-2018 Action Agenda Framework Webinar | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    FY 2016-2018 Action Agenda Framework Webinar FY 2016-2018 Action Agenda Framework Webinar Learn about the EJ IWG's Draft Action Agenda Framework. The Framework advances greater ...

  5. EIS-0473: Mitigation Action Plan | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Mitigation Action Plan EIS-0473: Mitigation Action Plan W.A. Parish Post-Combustion CO2 Capture and Sequestration Project, Fort Bend County, Texas This Mitigation Action Plan (MAP)...

  6. Operating and Maintaining Energy Smart Schools Action Plan Template - All Action Plans

    SciTech Connect (OSTI)

    none,

    2009-07-01

    EnergySmart Schools action plan templates for benchmarking, lighting, HVAC, water heating, building envelope, transformer, plug loads, kitchen equipment, swimming pool, building automation system, other.

  7. The Climate Change Action Plan: Technical supplement

    SciTech Connect (OSTI)

    Not Available

    1994-03-01

    This Technical Annex documents the assumptions and parameters used in developing the supporting analysis for the Climate Change Action Plan (the Plan) issued by President Clinton on October 19, 1993. The Annex is intended to meet the needs of independent energy and environmental analysts who wish to better understand the Plan, its analytical underpinnings, and the events that need to transpire for the emissions reductions called for in the Plan to be realized. The Plan documented in this Annex reflects the outcome of a wide-ranging effort by Government agencies and interested members of the public to develop and implement actions that can reduce net greenhouse gas emissions in the year 2000 to their aggregate 1990 level. Based on agency and public input, the Climate Change Mitigation Group, chaired by the White House Office on Environmental Policy, developed the Plan`s content. Many of the actions called for in the Plan are now underway, while others are in advanced planning pending congressional action on the fiscal year 1995 budget. The analysis supporting the Plan represents the results of an interagency effort. The US Department of Energy (DOE) was responsible for the integrated analysis of energy-related options, based on the analysis of individual energy-related options by DOE, the US Environmental Protection Agency (EPA), and the US Department of Transportation (DOT). EPA led in providing analysis for actions related to methane, hydrofluorocarbons, and perfluorocarbons. The US Department of Agriculture (USDA) led the analysis of carbon sequestration actions and cooperated with EPA in the analysis of actions to reduce nitrous oxide emissions.

  8. EIS-0380: Mitigation Action Plan | Department of Energy

    Office of Environmental Management (EM)

    : Mitigation Action Plan EIS-0380: Mitigation Action Plan Continued Operation of Los Alamos National Laboratory, Los Alamos, New Mexico PDF icon Site-Wide Environmental Impact Statement for the Continued Operation of Los Alamos National Laboratory (DOE/EIS-0380) Mitigation Action Plan (December 2008) More Documents & Publications EIS-0380: Annual Mitigation Action Plan Annual Report EIS-0380: Mitigation Action Plan Annual Report EIS-0380: Mitigation Action Plan

  9. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

    SciTech Connect (OSTI)

    Young, Erin C.; Wu Feng; Haeger, Daniel A.; Nakamura, Shuji; Denbaars, Steven P.; Cohen, Daniel A.; Speck, James S.; Romanov, Alexey E.

    2012-10-01

    In this Letter, we report on the growth and properties of relaxed, compositionally graded Al{sub x}Ga{sub 1-x}N buffer layers on freestanding semipolar (2021) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10{sup 6}/cm{sup 2} as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

  10. Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces

    SciTech Connect (OSTI)

    Li, Huijie E-mail: sh-yyang@semi.ac.cn; Zhao, Guijuan; Liu, Guipeng; Wei, Hongyuan; Jiao, Chunmei; Yang, Shaoyan E-mail: sh-yyang@semi.ac.cn; Wang, Lianshan; Zhu, Qinsheng

    2014-05-21

    One dimensional electron gas (1DEG) arrays in vicinal GaN/AlGaN heterostructures have been studied. The steps at the interface would lead to the lateral barriers and limit the electron movement perpendicular to such steps. Through a self-consistent Schrdinger-Poisson approach, the electron energy levels and wave functions were calculated. It was found that when the total electron density was increased, the lateral barriers were lowered due to the screening effects by the electrons, and the electron gas became more two-dimension like. The calculated 1DEG densities were compared to the experimental values and good agreements were found. Moreover, we found that a higher doping density is more beneficial to form 1-D like electron gas arrays.

  11. Electron heating due to microwave photoexcitation in the high mobility GaAs/AlGaAs two dimensional electron system

    SciTech Connect (OSTI)

    Ramanayaka, A. N.; Mani, R. G.; Wegscheider, W.

    2013-12-04

    We extract the electron temperature in the microwave photo-excited high mobility GaAs/AlGaAs two dimensional electron system (2DES) by studying the influence of microwave radiation on the amplitude of Shubnikov-de Haas oscillations (SdHOs) in a regime where the cyclotron frequency, ?{sub c}, and the microwave angular frequency, ?, satisfy 2? ? ?{sub c} ? 3.5? The results indicate that increasing the incident microwave power has a weak effect on the amplitude of the SdHOs and therefore the electron temperature, in comparison to the influence of modest temperature changes on the dark-specimen SdH effect. The results indicate negligible electron heating under modest microwave photo-excitation, in good agreement with theoretical predictions.

  12. Origin of radiative recombination and manifestations of localization effects in GaAs/GaNAs core/shell nanowires

    SciTech Connect (OSTI)

    Chen, S. L.; Filippov, S.; Chen, W. M.; Buyanova, I. A.; Ishikawa, Fumitaro

    2014-12-22

    Radiative carrier recombination processes in GaAs/GaNAs core/shell nanowires grown by molecular beam epitaxy on a Si substrate are systematically investigated by employing micro-photoluminescence (?-PL) and ?-PL excitation (?-PLE) measurements complemented by time-resolved PL spectroscopy. At low temperatures, alloy disorder is found to cause localization of photo-excited carriers leading to predominance of optical transitions from localized excitons (LE). Some of the local fluctuations in N composition are suggested to lead to strongly localized three-dimensional confining potential equivalent to that for quantum dots, based on the observation of sharp and discrete PL lines within the LE contour. The localization effects are found to have minor influence on PL spectra at room temperature due to thermal activation of the localized excitons to extended states. Under these conditions, photo-excited carrier lifetime is found to be governed by non-radiative recombination via surface states which is somewhat suppressed upon N incorporation.

  13. Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles

    SciTech Connect (OSTI)

    Tsai, Jung-Hui; Guo, Der-Feng; Lour, Wen-Shiung

    2011-09-15

    In this article, the comparison of DC performance on InGaP/GaAs pseudomorphic field-effect transistors with tripe doped-channel profiles is demonstrated. As compared to the uniform and high-medium-low doped-channel devices, the low-medium-high doped-channel device exhibits the broadest gate voltage swing and the best device linearity because more twodimensional electron gases are formed in the heaviest doped channel to enhance the magnitude of negative threshold voltage. Experimentally, the transconductance within 50% of its maximum value for gate voltage swing is 4.62 V in the low-medium-high doped-channel device, which is greater than 3.58 (3.30) V in the uniform (high-medium-low) doped-channel device.

  14. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Mingda; Song, Bo; Qi, Meng; Hu, Zongyang; Nomoto, Kazuki; Yan, Xiaodong; Cao, Yu; Johnson, Wayne; Kohn, Erhard; Jena, Debdeep; et al

    2015-02-16

    In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 mΩ · cm2), a low turn-on voltage (<0.7 V) and a high reverse breakdown voltage BV (>1.9 kV), were simultaneously achieved in devices with a 25 μm anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW·cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

  15. Passivation of deep level states caused by misfit dislocations in InGaAs on patterned GaAs

    SciTech Connect (OSTI)

    Matragrano, M.J.; Watson, G.P.; Ast, D.G. ); Anderson, T.J.; Pathangey, B. )

    1993-03-22

    Deep level transient spectroscopy (DLTS) and cathodoluminescence (CL) were used to study the hydrogen passivation of misfit dislocations in In[sub 0.06]Ga[sub 0.94]As/GaAs heterostructures. The CL observations indicate that hydrogen plasma exposure passivates most, but not all, of the dark line defects existing in the specimen prior to hydrogenation. The concentration of deep level defect states that cannot be passivated is below the detection limit of the DLTS instrument (approximately 4[times]10[sup 12] cm[sup [minus]3]). We find the passivation is stable after anneals at temperatures as high as 600 [degree]C, indicating that hydrogen passivation of misfit dislocations is at least as stable as that of the isolated point defect studied previously with DLTS [W. C. Dautremont-Smith, J. C. Nabity, V. Swaminathan, M. Stavola, J. Chevalier, C. W. Tu, and S. J. Pearton, Appl. Phys. Lett. [bold 49] 1098 (1986)].

  16. Terrestrial Concentrator PV Modules Based on GaInP/GaAs/Ge TJ Cells and Minilens Panels

    SciTech Connect (OSTI)

    Rumyantsev, V. D.; Sadchikov, N. A.; Chalov, A. E.; Ionova, E. A.; Friedman, D. J.; Glenn, G.

    2006-01-01

    This paper is a description of research activity in the field of cost-effective modules realizing the concept of very high solar concentration with small-aperture area Fresnel lenses and multijunction III-V cells. Structural simplicity and 'all-glass' design are the guiding principles of the corresponding development. The advanced concentrator modules are made with silicone Fresnel lens panels (from 8 up to 144 lenses, each lens is 4 times 4 cm{sup 2} in aperture area) with composite structure. GaInP/GaAs/Ge triple-junction cells with average efficiencies of 31.1 and 34.7% at 1000 suns were used for the modules. Conversion efficiency as high as 26.3% has been measured indoors in a test module using a newly developed large-area solar simulator.

  17. Mitigation Action Plans and Scenarios (MAPS) | Open Energy Information

    Open Energy Info (EERE)

    Mitigation Action Plans and Scenarios (MAPS) (Redirected from CIFF-Chile-Mitigation Action Plans and Scenarios (MAPS)) Jump to: navigation, search Retrieved from "http:...

  18. DOE SEE Action, "Behavior Change Strategies in Traditional Energy...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    SEE Action, "Behavior Change Strategies in Traditional Energy Efficiency Programs" Webinar DOE SEE Action, "Behavior Change Strategies in Traditional Energy Efficiency Programs"...

  19. Tonopah Test Range Environmental Restoration Corrective Action Sites

    SciTech Connect (OSTI)

    NSTec Environmental Restoration

    2010-08-04

    This report describes the status (closed, closed in place, or closure in progress) of the Corrective Action Sites and Corrective Action Units at the Tonopah Test Range

  20. Acquisition Guide Chapter 50.1- Extraordinary Contractual Actions...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Acquisition Guide Chapter 50.1- Extraordinary Contractual Actions (January 2009) Acquisition Guide Chapter 50.1- Extraordinary Contractual Actions (January 2009) The purpose of...