National Library of Energy BETA

Sample records for ga proposed action

  1. Implementation Proposal for the National Action Plan on Demand...

    Energy Savers [EERE]

    Implementation Proposal for the National Action Plan on Demand Response - July 2011 Implementation Proposal for the National Action Plan on Demand Response - July 2011 Report to...

  2. N Springs expedited response action proposal

    SciTech Connect (OSTI)

    Not Available

    1994-01-01

    Since signing the Hanford Federal Facility Agreement and Consent Order (Tri-Party Agreement) in 1989, the parties to the agreement have recognized the need to modify the approach to conducting investigations, studies, and cleanup actions at Hanford. To implement this approach, the parties have jointly developed the Hanford Past-Practice Strategy. The strategy defines a non-time-critical expedited response action (ERA) as a response action ``needed to abate a threat to human health or welfare or the environment where sufficient time exists for formal planning prior to initiation of response. In accordance with the past-practice strategy, DOE proposes to conduct an ERA at the N Springs, located in the Hanford 100 N Area, to substantially reduce the strontium-90 transport into the river through the groundwater pathway. The purpose of this ERA proposal is to provide sufficient information to select a preferred alternative at N Springs. The nature of an ERA requires that alternatives developed for the ERA be field ready; therefore, all the technologies proposed for the ERA should be capable of addressing the circumstances at N Springs. A comparison of these alternatives is made based on protectiveness, cost, technical feasibility, and institutional considerations to arrive at a preferred alternative. Following the selection of an alternative, a design phase will be conducted; the design phase will include a detailed look at design parameters, performance specifications, and costs of the selected alternative. Testing will be conducted as required to generate design data.

  3. White Bluffs Pickling Acid Cribs expedited response action proposal

    SciTech Connect (OSTI)

    Not Available

    1993-07-01

    The US Environmental Protection Agency (EPA) and Washington State Department of Ecology (Ecology) recommended in a letter dated March 4, 1992 (Attachment 1) that the US Department of Energy (DOE) prepare an expedited response action (ERA) for the White Bluffs Pickling Acid Cribs Site. The lead regulatory agency for this ERA is the EPA, with Ecology providing support. The goal of this ERA is to reduce the potential of any residual contaminant migration from the cribs to the soil column and groundwater. The cribs are the only waste site within the 100-IU-5 operable unit. Since the operable unit is surrounded by other waste units, tracing the potential groundwater contamination from the 100-IU-5 operable unit for this ERA would not be effective. Groundwater will be investigated with the 100-IU-2 operable unit. This ERA proposal presents the characterization data from the site investigations conducted in November of 1992. This information is evaluated to present the best method for reducing potential of contaminant migration from the disposal unit, ensuring both protection of human health and the environment. The ERA proposal will undergo a public review. EPA and Ecology will issue an Action Agreement Memorandum after comment resolution. This Action Memorandum may authorize implementation of the ERA proposal`s recommended alternative. The ERA may also provide a No Further Action Interim Record of Decision (IROD) of the 100-IU-5 operable unit.

  4. Property:NEPA Proposed Action | Open Energy Information

    Open Energy Info (EERE)

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  5. Sodium Dichromate Barrel Landfill expedited response action proposal

    SciTech Connect (OSTI)

    Not Available

    1993-09-01

    The US Environmental Protection Agency (EPA) and Washington State Department of Ecology (Ecology) recommended that the US Department of Energy (DOE) prepare an expedited response action (ERA) for the Sodium Dichromate Barrel Landfill. The Sodium Dichromate Barrel Disposal Site was used in 1945 for disposal of crushed barrels. The site location is the sole waste site within the 100-IU-4 Operable Unit. The Waste Information Data System (WIDS 1992) assumes that the crushed barrels contained 1% residual sodium dichromate at burial time and that only buried crushed barrels are at the site. Burial depth is shallow since visual inspection finds numerous barrel debris on the surface. A non-time-critical ERA proposal includes preparation of an engineering evaluation and cost analysis (EE/CA) section. The EE/CA is a rapid, focused evaluation of available technologies using specific screening factors to assess feasibility, appropriateness, and cost. The ERA goal is to reduce the potential for any contaminant migration from the landfill to the soil column, groundwater, and Columbia River. Since the landfill is the only waste site within the operable unit, the ERA will present a final remediation of the 100-IU-4 operable unit.

  6. Operable Unit 3: Proposed Plan/Environmental Assessment for interim remedial action

    SciTech Connect (OSTI)

    Not Available

    1993-12-01

    This document presents a Proposed Plan and an Environmental Assessment for an interim remedial action to be undertaken by the US Department of Energy (DOE) within Operable Unit 3 (OU3) at the Fernald Environmental Management Project (FEMP). This proposed plan provides site background information, describes the remedial alternatives being considered, presents a comparative evaluation of the alternatives and a rationnale for the identification of DOE`s preferred alternative, evaluates the potential environmental and public health effects associated with the alternatives, and outlines the public`s role in helping DOE and the EPA to make the final decision on a remedy.

  7. Proposed measurement of spin currents in a GaAs crystal using the electro-optical Pockels effect

    SciTech Connect (OSTI)

    Zhang, Xingchu; Zheng, Yongjun; She, Weilong

    2014-07-14

    A new method for measuring spin currents is proposed, based on the linear electro-optic (Pockels) effect caused by the additional second-order nonlinear electric susceptibility (electro-optic tensor) generated by the spin currents. The non-zero elements of electro-optic tensor induced by spin currents in GaAs crystal are calculated, and the wave coupling theory of linear electro-optic effect is used to analyze the polarization change of a probe beam. The numerical results show that, for a linearly polarized probe beam with a frequency close to the band gap of GaAs crystal, its polarization rotation can be as large as 14??rad under an applied electric field of about 350?V/mm. This effect should offer an alternative detection method for spintronics.

  8. Proposed Action Title: U.S. Department of Energy Southwestern Power Administration

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  9. DOE and FERC Jointly Submit Implementation Proposal for The National Action Plan on Demand Response to Congress

    Broader source: Energy.gov [DOE]

    The U.S. Department of Energy and the Federal Energy Regulatory Commission (FERC) jointly submitted to Congress a required “Implementation Proposal for The National Action Plan on Demand Response.”

  10. Finding of no significant impact proposed remedial action at two uranium processing sites near Slick Rock, Colorado

    SciTech Connect (OSTI)

    Not Available

    1994-10-01

    The U.S. Department of Energy (DOE) has prepared an environmental assessment (EA) (DOE/EA-0339) of the proposed remedial action at two uranium processing sites near Slick Rock in San Miguel County, Colorado. These sites contain radioactively contaminated materials that would be removed and stabilized at a remote location. Based on the information and analyses in the EA, the DOE has determined that the proposed action does not constitute a major Federal action significantly affecting the quality of the human environment within the meaning of the National Environmental Policy Act (NEPA) of 1969 (42 U.S.C. 4321 et seq.), as amended. Therefore, preparation of an environmental impact statement is not required, and the DOE is issuing this Finding of No Significant Impact (ONSI).

  11. Finding of no significant impact proposed corrective action for the Northeast Site at the Pinellas Plant in Largo, Florida

    SciTech Connect (OSTI)

    1995-06-01

    The U.S. Department of Energy (DOE) has prepared an Environmental Assessment (EA) (DOE/EA-0976) of the proposed corrective action for the Northeast Site at the Pinellas Plant in Largo, Florida. The Northeast Site contains contaminated groundwater that would be removed, treated, and discharged to the Pinellas County Sewer System. Based on the analyses in the EA, the DOE has determined that the proposed action is not a major Federal action significantly affecting the quality of the human environment, within the meaning of the National Environmental Policy Act of 1969 (NEPA), 42 U.S.C.4321 et.seq. Therefore, the preparation of an environmental impact statement is not required and the DOE is issuing this Finding of No Significant Impact (FONSI).

  12. SB 4 Interim Well Stimulation Treatment Regulations Notice of Proposed Emergency Rulemaking Action

    E-Print Network [OSTI]

    . DIVISION OF OIL, GAS, AND GEOTHERMAL RESOURCES Notice Published December 11, 2013 NOTICE IS HEREBY GIVEN of Oil, Gas and Geothermal Resources to conduct well stimulation treatment. The permit application must RULEMAKING ACTION REGARDING TITLE 14. NATURAL RESOURCES DIVISION 2. DEPARTMENT OF CONSERVATION CHAPTER 4

  13. Review and analysis of proposed EPA groundwater standards for the UMTRA Project. [Uranium Mill Tailings Remedial Action (UMTRA) Project

    SciTech Connect (OSTI)

    Not Available

    1987-10-01

    The Title I groundwater standards for inactive uranium mill tailings sites, which were promulgated on January 5, 1983, by the US Environmental Protection Agency (EPA) for the Uranium Mill Tailings Remedial Action (UMTRA) Project, were remanded to the EPA on September 3, 1985, by the US Tenth Circuit Court of Appeals. The Court instructed the EPA to compile general groundwater standards for all sites. On September 24, 1987, the EPA published proposed standards in response to the remand. This Summary Report includes an evaluation of the potential effects of the proposed EPA groundwater standards on the UMTRA Project as well as a discussion of the DOE's position on the proposed standards. This report is accompanied by a detailed Technical Report and Appendices which provide supporting information and analyses. This Summary Report results from a study undertaken to: determine the impact of the proposed standards on the UMTRA Project; and recommend provisions for the implementation of the final standards that will minimize adverse impact to the conduct of the UMTRA Project while ensuring protection of human health and the environment. Specifically, the following were considered: the flexibility of the proposed standards; interpretations of the proposed standards; the extent of aquifer restoration that may be required to implement the proposed standards at each site; the costs of aquifer restoration; and design changes necessary to meet the standards.

  14. US Department of Energy response to standards for remedial actions at inactive uranium processing sites: Proposed rule

    SciTech Connect (OSTI)

    Not Available

    1988-01-29

    The Title I groundwater standards for inactive uranium mill tailings sites, which were promulgated on January 5, 1983, by the US Environmental Protection Agency (EPA) for the Uranium Mill Tailings Remedial Action (UMTRA) Project, were remanded to the EPA on September 3, 1985, by the US Tenth Circuit Court of Appeals. The Court instructed the EPA to compile general groundwater standards for all Title I sites. On September 24, 1987, the EPA published proposed standards (52FR36000-36008) in response to the remand. This report includes an evaluation of the potential effects of the proposed EPA groundwater standards on the UMTRA Project, as well as a discussion of the DOE's position on the proposed standards. The report also contains and appendix which provides supporting information and cost analyses. In order to assess the impacts of the proposed EPA standards, this report summarizes the proposed EPA standards in Section 2.0. The next three sections assess the impacts of the three parts of the EPA standards: Subpart A considers disposal sites; Subpart B is concerned with restoration at processing sites; and Subpart C addresses supplemental standards. Section 6.0 integrates previous sections into a recommendations section. Section 7.0 contains the DOE response to questions posed by the EPA in the preamble to the proposed standards. 6 refs., 5 figs., 3 tabs.

  15. EIS-0385: Notice of Proposed Floodplain and Wetland Actions | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum Based|Department of5Department of Energy Notice ofSA-01:Energy Proposed

  16. Proposed plan for remedial action at the quarry residuals operable unit of the Weldon Spring Site

    SciTech Connect (OSTI)

    NONE

    1998-03-01

    This proposed plan addresses the management of contamination present in various components of the quarry residuals operable unit (QROU) of the Weldon Spring site, which is located in St. Charles County, Missouri. The QROU consists of (1) residual waste at the quarry proper; (2) the Femme Osage Slough, Little Femme Osage Creek, and Femme Osage Creek; and (3) quarry groundwater located primarily north of the slough. Potential impacts to the St. Charles County well field downgradient of the quarry area are also being addressed as part of the evaluations for this operable unit. Remedial activities for the QROU will be conducted by the US Department of Energy (DOE) in accordance with the Comprehensive Environmental Response, Compensation, and Liability Act (CERCLA), as amended. As part of the remedial investigation/feasibility study (RI/FS) process required for the QROU under CERCLA, three major evaluation documents have been prepared to support cleanup decisions for this operable unit.

  17. Proposed

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  18. Description of Proposed Action

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  19. Environmental Assessment - Proposed Actions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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  20. Proposed mechanism to represent the suppression of dark current density by four orders with low energy light ion (H{sup ?}) implantation in quaternary alloy-capped InAs/GaAs quantum dot infrared photodetectors

    SciTech Connect (OSTI)

    Mandal, A.; Ghadi, H.; Mathur, K.L.; Basu, A.; Subrahmanyam, N.B.V.; Singh, P.; Chakrabarti, S.

    2013-08-01

    Graphical abstract: - Abstract: Here we propose a carrier transport mechanism for low energy H{sup ?} ions implanted InAs/GaAs quantum dot infrared photodetectors supportive of the experimental results obtained. Dark current density suppression of up to four orders was observed in the implanted quantum dot infrared photodetectors, which further demonstrates that they are effectively operational. We concentrated on determining how defect-related material and structural changes attributed to implantation helped in dark current density reduction for InAs/GaAs quantum dot infrared photodetectors. This is the first study to report the electrical carrier transport mechanism of H{sup ?} ion-implanted InAs/GaAs quantum dot infrared photodetectors.

  1. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer the radiative recombination rates across the active region. Consequently, the light output power was enhanced

  2. Environmental Assessment for the proposed modification and continued operation of the DIII-D facility

    SciTech Connect (OSTI)

    NONE

    1995-07-01

    The EA evaluates the proposed action of modifying the DIII-D fusion facility and conducting related research activities at the GA San Diego site over 1995-1999 under DOE contract number DE-ACO3-89ER51114. The proposed action is need to advance magnetic fusion research for future generation fusion devices such as ITER and TPX. It was determined that the proposed action is not a major action significantly affecting the quality of the human environment according to NEPA; therefore a finding of no significant impact is made and an environmental impact statement is not required.

  3. UMTRA Project remedial action planning and disposal cell design to comply with the proposed EPA (Environmental Protection Agency) standards (40 CFR Part 192)

    SciTech Connect (OSTI)

    Not Available

    1989-01-01

    The Uranium Mill Tailings Remedial Action (UMTRA) Project involves stabilizing 24 inactive uranium mill tailings piles in 10 states. Remedial work must meet standards established by the US Environmental Protection Agency (EPA). Remedial action must be designed and constructed to prevent dispersion of the tailings and other contaminated materials, and must prevent the inadvertent use of the tailings by man. This report is prepared primarily for distribution to parties involved in the UMTRA Project, including the US Nuclear Regulatory Commission (NRC), and states and tribes. It is intended to record the work done by the DOE since publication of the proposed EPA groundwater protection standards, and to show how the DOE has attempted to respond and react in a positive way to the new requirements that result from the proposed standards. This report discusses the groundwater compliance strategies now being defined and implemented by the DOE, and details the changes in disposal cell designs that result from studies to evaluate ways to facilitate compliance with the proposed EPA groundwater protection standards. This report also serves to record the technical advances, planning, and progress made on the UMTRA Project since the appearance of the proposed EPA groundwater protection standards. The report serves to establish, document, and disseminate technical approaches and engineering and groundwater information to people who may be interested or involved in similar or related projects. 24 refs., 27 figs., 8 tabs.

  4. Proposed plan for remedial action for the Groundwater Operable Unit at the Chemical Plant Area of the Weldon Spring Site, Weldon Spring, Missouri

    SciTech Connect (OSTI)

    NONE

    1999-08-10

    This Proposed Plan addresses the remediation of groundwater contamination at the chemical plant area of the Weldon Spring site in Weldon Spring, Missouri. The site is located approximately 48 km (30 mi) west of St. Louis in St. Charles County . Remedial activities at the site will be conducted in accordance with the Comprehensive Environmental Response, Compensation, and Liability Act (CERCLA). The U.S. Department of Energy (DOE), in conjunction with the U.S. Department of the Army (DA), conducted a joint remedial investigation/feasibility study (RI/FS) to allow for a comprehensive evaluation of groundwater conditions at the Weldon Spring chemical plant area and the Weldon Spring ordnance works area, which is an Army site adjacent to the chemical plant area. Consistent with DOE policy, National Environmental Policy Act (NEPA) values have been incorporated into the CERCLA process. That is, the analysis conducted and presented in the RVFS reports included an evaluation of environmental impacts that is comparable to that performed under NEPA. This Proposed Plan summarizes information about chemical plant area groundwater that is presented in the following documents: (1) The Remedial Investigation (RI), which presents information on the nature and extent of contamination; (2) The Baseline Risk Assessment (BRA), which evaluates impacts to human health and the environment that could occur if no cleanup action of the groundwater were taken (DOE and DA 1997a); and (3) The Feasibility Study (FS) and the Supplemental FS, which develop and evaluate remedial action alternatives for groundwater remediation.

  5. Corrective Action

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Community, Environment Environmental Protection Obeying Environmental Laws Individual Permit Corrective Action Individual Permit: Corrective Action Certifications If...

  6. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ) In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells

  7. Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes

    E-Print Network [OSTI]

    Cornelius S. Bausch; Aune Koitmäe; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

    2013-05-06

    We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

  8. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    epitaxial growth of indium gallium nitride (InGaN) layers capable of producing high-efficiency LEDs when combined with chip-on-board packaging techniques. The proposed...

  9. Engineering evaluation/cost analysis for the proposed removal action at the Southeast Drainage near the Weldon Spring Site, Weldon Spring, Missouri

    SciTech Connect (OSTI)

    NONE

    1996-08-01

    The engineering evaluation/cost analysis (EE/CA) has been prepared to support the proposed removal of contaminated sediment from selected portions of the Southeast Drainage as part of cleanup activities being conducted at the Weldon Spring site in St. Charles County, Missouri, by the U.S. Department of Energy (DOE). The cleanup activities are conducted in accordance with the Comprehensive Environmental Response, Compensation, and Liability Act (CERCLA), as amended, incorporating the values of the National Environmental Policy Act (NEPA). The Weldon Spring site is located near the town of Weldon Spring, about 48 km (30 mi) west of St. Louis. It consists of two noncontiguous areas: the chemical plant area and a limestone quarry about 6.4 km (4 mi) south-southwest of the chemical plant area. The Southeast Drainage is a natural 2.4-km (1.5-mi) channel that carries surface runoff to the Missouri River from the southern portion of the chemical plant area and a small portion of the ordnance works area (part of the Weldon Spring Training Area) south of the groundwater divide. The drainage became contaminated as a result of past activities of the U.S. Army and the DOE (and its predecessors).

  10. A hole accelerator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Demir, Hilmi Volkan, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey)

    2014-10-13

    The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

  11. Chapter 4 Proposed Action and Alternatives

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    hikers along the Silver Star Trail on Silver Star Mountain. Moderate-to-high impact on Tarbell Trail, which would be crossed 8 times and paralleled for about 1 mile; <0.3 mile of...

  12. Chapter 2 - Proposed Action and Alternatives

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 OutreachProductswsicloudwsiclouddenDVA N C E D BGene Network ShapingDate: M-16-04-04Journal Article: 2-1 CHAPTER 2

  13. A hole accelerator for InGaN/GaN light-emitting diodes Zi-Hui Zhang, Wei Liu, Swee Tiam Tan, Yun Ji, Liancheng Wang, Binbin Zhu, Yiping Zhang, Shunpeng Lu,

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    GaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, the effectiveness of the hole ac- celerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED. VC 2014 AIP Publishing LLC. [http://dx.doi.org/10

  14. Portsmouth Proposed Plan for the Site-wide Waste Disposition...

    Energy Savers [EERE]

    developed for consideration. This Proposed Plan describes the required no-action alternative (Alternative 1) and two action alternatives, the first which considers a...

  15. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  16. Mitigation Action Plan

    SciTech Connect (OSTI)

    Not Available

    1994-02-01

    This Mitigation Action Plan (MAP) focuses on mitigation commitments stated in the Supplemental Environmental Impact Statement (SEIS) and the Record of Decision (ROD) for the Naval Petroleum Reserve No. 1 (NPR-1). Specific commitments and mitigation implementation actions are listed in Appendix A-Mitigation Actions, and form the central focus of this MAP. They will be updated as needed to allow for organizational, regulatory, or policy changes. It is the intent of DOE to comply with all applicable federal, state, and local environmental, safety, and health laws and regulations. Eighty-six specific commitments were identified in the SEIS and associated ROD which pertain to continued operation of NPR-1 with petroleum production at the Maximum Efficient Rate (MER). The mitigation measures proposed are expected to reduce impacts as much as feasible, however, as experience is gained in actual implementation of these measures, some changes may be warranted.

  17. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  18. Criminal Justice and Criminology Action Plan Memorandum of Understanding Status of Action Items from Prior Action Plan

    E-Print Network [OSTI]

    Frantz, Kyle J.

    Criminal Justice and Criminology Action Plan Memorandum of Understanding Status of Action Items from Prior Action Plan · Produce a PhD proposal in Criminal Justice. Completed · Redesign the graduate of senior faculty with strong records of obtaining external funding should become a top priority." · "The

  19. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  20. Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1

    E-Print Network [OSTI]

    Lu, Wei

    quantum dots by low-energy ion sputtering on a surface has been reported in several semiconductor sys quantum dots on the surface. The mechanism involves the balance between roughening and smoothing actions], Ge [10], as well as a variety of III­V compounds (GaSb [11], InP [12], and InSb [13]) can form

  1. ACTION PLAN

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach HomeA Better Anode Design to Improve4AJ01) (See Energy Level79AJ01) (NotAdvanced ABSTRACTSFor-1 ACTION

  2. Corrective Action

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room News PublicationsAuditsClusterInformationContractCorporate Culture | NationalCorrective Action

  3. High efficiency InGaAs solar cells on Si by InP layer transfer James M. Zahler

    E-Print Network [OSTI]

    Atwater, Harry

    illumination was achieved using an InGaP/GaAs/InGaAs triple-junction cell design with an In- GaAs bottom cell.1 benefit from such an InP/Si substrate.2 Additionally, a proposed four-junction solar cell, fabri- cated for bulk InP in the fabrication of such a four-junction solar cell could significantly reduce the substrate

  4. RCRA corrective action determination of no further action

    SciTech Connect (OSTI)

    1996-06-01

    On July 27, 1990, the U.S. Environmental Protection Agency (EPA) proposed a regulatory framework (55 FR 30798) for responding to releases of hazardous waste and hazardous constituents from solid waste management units (SWMUs) at facilities seeking permits or permitted under the Resource Conservation and Recovery Act (RCRA). The proposed rule, `Corrective Action for Solid Waste Management Units at Hazardous Waste Facilities`, would create a new Subpart S under the 40 CFR 264 regulations, and outlines requirements for conducting RCRA Facility Investigations, evaluating potential remedies, and selecting and implementing remedies (i.e., corrective measures) at RCRA facilities. EPA anticipates instances where releases or suspected releases of hazardous wastes or constituents from SWMUs identified in a RCRA Facility Assessment, and subsequently addressed as part of required RCRA Facility Investigations, will be found to be non-existent or non-threatening to human health or the environment. Such releases may require no further action. For such situations, EPA proposed a mechanism for making a determination that no further corrective action is needed. This mechanism is known as a Determination of No Further Action (DNFA) (55 FR 30875). This information Brief describes what a DNFA is and discusses the mechanism for making a DNFA. This is one of a series of Information Briefs on RCRA corrective action.

  5. A GA-based Approach for Scheduling Decomposable Data Grid Applications

    E-Print Network [OSTI]

    Weissman, Jon

    A GA-based Approach for Scheduling Decomposable Data Grid Applications Seonho Kim and Jon B data onto communication and computation resources. The proposed GA-based scheduler takes advantage, Data Grid, Job Scheduling, Genetic Algorithm, Parallel Processing Relevant technical areas: Network-Based

  6. QER- Comment of Berkshire Environmental Action Team

    Broader source: Energy.gov [DOE]

    Dear members of the Quadrennial Energy Review Task Force, Please find attached comments from the Berkshire Environmental Action Team, Inc. (BEAT) regarding the proposed natural gas pipeline expansion. Thank you for considering our comments.

  7. Action Principle for the Generalized Harmonic Formulation of General Relativity

    E-Print Network [OSTI]

    J. David Brown

    2011-09-07

    An action principle for the generalized harmonic formulation of general relativity is presented. The action is a functional of the spacetime metric and the gauge source vector. An action principle for the Z4 formulation of general relativity has been proposed recently by Bona, Bona--Casas and Palenzuela (BBP). The relationship between the generalized harmonic action and the BBP action is discussed in detail.

  8. Unsolicited Proposals

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    2002-02-27

    The order sets forth Department of Energy (DOE) requirements and responsibilities for the receipt, processing, and review of unsolicited proposals (USPs). To ensure that those submitting USPs are notified in a timely manner of the status (e.g., pending, accepted for funding, or declined) of their Supersedes DOE O 542.2. Certified 12-28-06.

  9. Request for Salary Action Requesting action

    E-Print Network [OSTI]

    Arnold, Jonathan

    Request for Salary Action Requesting action: Above "annual entry maximum" Mid-year increase Promotional salary increase exception Counter offer Salary supplement Other Jan. 28 2015 Tracking number Date

  10. DOE Initiates Enforcement Actions Against 4 Showerhead Manufacturers...

    Energy Savers [EERE]

    Against 4 Showerhead Manufacturers (Notice of Proposed Civil Penalty and Requests for Test Data Issued) DOE Initiates Enforcement Actions Against 4 Showerhead Manufacturers...

  11. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

    2010-11-15

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In{sub 0.33}Ga{sub 0.67}N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm{sup 2} at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm{sup 2}. These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  12. p-type GaN grown by phase shift epitaxy

    SciTech Connect (OSTI)

    Zhong, M.; Steckl, A. J., E-mail: a.steckl@uc.edu [Department of Electrical Engineering and Computing Systems, University of Cincinnati, Cincinnati, Ohio 45221-0030 (United States); Roberts, J. [Nitronex Corporation, Raleigh, North Carolina 27606 (United States)] [Nitronex Corporation, Raleigh, North Carolina 27606 (United States); Kong, W.; Brown, A. S. [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States)] [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States)

    2014-01-06

    Phase shift epitaxy (PSE) is a periodic growth scheme, which desynchronizes host material growth process from dopant incorporation, allowing independent optimization. p-type doping of GaN with Mg by PSE is accomplished with molecular beam epitaxy by periodic shutter action (in order to iterate between Ga- and N-rich surface conditions) and by adjusting time delays between dopant and Ga shutters. Optimum PSE growth was obtained by turning on the Mg flux in the N-rich condition. This suppresses Mg self-compensation at high Mg concentration and produces fairly high hole concentrations (2.4?×?10{sup 18}?cm{sup ?3})

  13. RCRA corrective action program guide (Interim)

    SciTech Connect (OSTI)

    Not Available

    1993-05-01

    The US Department of Energy (DOE) is responsible for compliance with an increasingly complex spectrum of environmental regulations. One of the most complex programs is the corrective action program proposed by the US Environmental Protection Agency (EPA) under the authority of the Resource Conservation and Recovery Act (RCRA) as amended by the Hazardous and Solid Waste Amendments (HSWA). The proposed regulations were published on July 27, 1990. The proposed Subpart S rule creates a comprehensive program for investigating and remediating releases of hazardous wastes and hazardous waste constituents from solid waste management units (SWMUs) at facilities permitted to treat, store, or dispose of hazardous wastes. This proposed rule directly impacts many DOE facilities which conduct such activities. This guidance document explains the entire RCRA Corrective Action process as outlined by the proposed Subpart S rule, and provides guidance intended to assist those persons responsible for implementing RCRA Corrective Action at DOE facilities.

  14. Proposal Process

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeedingProgramExemptions |(Conference)Project TourVehicles &Proposal Process

  15. Proposed Handout

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeedingProgramExemptions |(Conference)ProjectProposed Settlement

  16. RAPIDD Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMassR&D100 Winners * Impacts on Global Technology OUTSIDE FRONT7a.RRAPIDD Proposals

  17. Final Proposal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverse (Journal Article) | SciTechSubmittedEcologistand9,Final-Proposal Sign In

  18. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  19. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  20. Climate change action plan

    E-Print Network [OSTI]

    Delivery Climate change action plan 2009-2011 #12;2 | Climate change action plan ©istockphoto.com #12;Climate Change Action Plan Climate change action plan | 3 Contents Overview 4 Preface and Introduction 5 Climate change predictions for Scotland 6 The role of forestry 7 Protecting and managing

  1. Indium distribution at the interfaces of (Ga,In)(N,As)/GaAs quantum wells

    SciTech Connect (OSTI)

    Luna, E.; Ishikawa, F.; Batista, P. D.; Trampert, A. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin (Germany)

    2008-04-07

    The indium distribution across (Ga,In)(N,As) quantum wells is determined by using transmission electron microscopy techniques. Inside the quantum well, the indium distribution is well described by Muraki's segregation model; however, it fails in reflecting the concentration at the interfaces. To describe them, we propose a sigmoidal law which defines the smooth variation of the indium concentration with the position and provides a systematic and quantitative characterization of the interfaces. The thermal stability of the interfaces and their interplay with segregation effects are discussed. A connection between the high thermal robustness of the interfaces and the inherent thermodynamic miscibility gap of the alloy is suggested.

  2. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  3. GaAs MOEMS Technology

    SciTech Connect (OSTI)

    SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.; TIGGES, CHRIS P.; RENO, JOHN L.; PEAKE, GREGORY M.; KLEM, JOHN F.; LEAN, JEN; FULLER, CHARLES T.; BURKHART, JEFF; BAUER, THOMAS; SULLIVAN, CHARLES T.

    2003-03-01

    Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vital step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.

  4. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  5. 2014 Joint Action Workshop

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Joint Action Workshop is an annual event for joint action agencies and their members to meet informally and discuss emerging policy, regulatory, and power supply issues, and other topics...

  6. The Gauged Unparticle Action

    E-Print Network [OSTI]

    A. Lewis Licht

    2008-06-24

    We show that the unparticle action that is made gauge invariant by the inclusion of an open Wilson line factor can be transformed into the integral-differential operator action that avoids the use of the Wilson line factor. The two forms of the action should therefore give the same Feynman diagrams. We also show that it is relatively easy to construct Feynman diagrams using the operator action.

  7. United States Forest Service - Forest Service Schedule of Proposed Actions

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEt Al.,Turin, New York:Power Company Jump to:Association USEAOpen| Open| Open

  8. Step Plus Proposal for Personnel Actions Robert Feenstra

    E-Print Network [OSTI]

    Ullrich, Paul

    (CAES), Plant Pathology Rachael Goodhue, CAES, Agricultural & Resource Economics Kyaw Tha Paw U, CAES

  9. CATEGORICAL EXCLUSION (CX) DETERMINATION BRIEF DESCRIPTION OF PROPOSED ACTION:

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 OutreachProductswsicloudwsiclouddenDVA N C E D B L OBransenBusinessInitial Validation'IU "~I :~~~r;::::N

  10. CATEGORICAL EXCLUSION (CX) DETERMINATION BRIEF DESCRIPTION OF PROPOSED ACTION:

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 OutreachProductswsicloudwsiclouddenDVA N C E D B L OBransenBusinessInitial Validation'IU "~I :~~~r;::::N'u

  11. CATEGORICAL EXCLUSION (CX) DETERMINATION BRIEF DESCRIPTION OF PROPOSED ACTION:

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 OutreachProductswsicloudwsiclouddenDVA N C E D B L OBransenBusinessInitial Validation'IU "~I

  12. EA-2005: Notice of Proposed Floodplain Action | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergy A plug-in electricLaboratoryofNoticesEnergyfindingChromium Plume Control

  13. ACTION DESCRIPTION MEMORANDUM PROPOSED DECONTAMINATION OF THREE BUILDINGS AT THE

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouthReport for the WeldonB10081278MaywoodWayne Site83 UMTRCA3.1[ { -

  14. Implementation Proposal for the National Action Plan on Demand Response -

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on DeliciousMathematicsEnergy HeadquartersFuelBConservation Standards andEnergy IllinoisPosting ofJuly 2011 |

  15. Computational analysis of thin film InGaAs/GaAs quantum well solar cells with

    E-Print Network [OSTI]

    Yu, Edward T.

    Computational analysis of thin film InGaAs/GaAs quantum well solar cells with back side light, Austin, TX 78758, USA * ety@ece.utexas.edu Abstract: Simulations of thin film (~2.5 µm thick) InGaAs/GaAs. Roberts, G. Hill, and C. Calder, "Progress in quantum well solar cells," Thin Solid Films 511­512, 76

  16. GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response

    E-Print Network [OSTI]

    Jalali. Bahram

    into existing multijunction cells either as a means to increase the current or efficiency by using low band gapGaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

  17. Highly Effective Actions

    E-Print Network [OSTI]

    John H. Schwarz

    2013-11-22

    It is conjectured that the world-volume action of a probe D3-brane in an $AdS_5 \\times S^5$ background of type IIB superstring theory, with one unit of flux, can be reinterpreted as the exact effective action (or highly effective action) for U(2), ${\\cal N} = 4$ super Yang-Mills theory on the Coulomb branch. An analogous conjecture for $U(2)_k \\times U(2)_{-k} $ ABJM theory is also presented. The main evidence supporting these conjectures is that the brane actions have all of the expected symmetries and dualities. Highly effective actions have general coordinate invariance, even though they describe nongravitational theories.

  18. Action Item Review and Status

    Office of Environmental Management (EM)

    Waste Corporate Board Action Items Action Item Resolution Action Item Strategic Planning Initiative Optimization Study Resolution Presentation by S. Schneider (HLW System...

  19. Correlation of action potentials in adjacent neurons

    E-Print Network [OSTI]

    Shneider, M N

    2015-01-01

    A possible mechanism for the synchronization of action potential propagation along a bundle of neurons (ephaptic coupling) is considered. It is shown that this mechanism is similar to the salutatory conduction of the action potential between the nodes of Ranvier in myelinated axons. The proposed model allows us to estimate the scale of the correlation, i.e., the distance between neurons in the nervous tissue, wherein their synchronization becomes possible. The possibility for experimental verification of the proposed model of synchronization is discussed.

  20. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  1. On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Gao, Feng; Chen, Di; Tuller, Harry L.; Thompson, Carl V.; Palacios, Tomás

    2014-03-28

    Water-related redox couples in ambient air are identified as an important source of the surface trapping states, dynamic on-resistance, and drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). Through in-situ X-ray photoelectron spectroscopy (XPS), direct signature of the water-related species—hydroxyl groups (OH) was found at the AlGaN surface at room temperature. It was also found that these species, as well as the current collapse, can be thermally removed above 200?°C in vacuum conditions. An electron trapping mechanism based on the H{sub 2}O/H{sub 2} and H{sub 2}O/O{sub 2} redox couples is proposed to explain the 0.5?eV energy level commonly attributed to the surface trapping states. Finally, the role of silicon nitride passivation in successfully removing current collapse in these devices is explained by blocking the water molecules away from the AlGaN surface.

  2. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  3. Protective Actions and Reentry

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    1997-08-21

    This volume defines appropriate protective actions and reentry of a site following an emergency. Canceled by DOE G 151.1-4.

  4. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the k·p method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 Å. The joint density of states and optical absorption of a 40/40 Å GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  5. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  6. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  7. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  8. Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    Gao, Feng, Ph. D. Massachusetts Institute of Technology

    2014-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

  9. Probing the structure of the N=Z=31 nucleus {sub 31}{sup 62}Ga

    SciTech Connect (OSTI)

    Vincent, S. M.; Regan, P. H.; Gelletly, W.; Pearson, C. J. [Department of Physics, University of Surrey, Guildford GU2 5XH (United Kingdom); Warner, D. D.; Simpson, J. [CCLRC Daresbury Laboratory, Warrington, WA4 4AD (United Kingdom); Bark, R.; Saitoh, T. [Niels Bohr Institute Tandem Accelerator Laboratory, Risoe, DK-4000, Roskilde (Denmark); Blumenthal, D.; Carpenter, M. P.; Davids, C. N.; Henderson, D. J.; Janssens, R. V. F.; Lister, C. J.; Nisius, D.; Seweryniak, D. [Argonne National Laboratory, 9700 South Cass Ave, Illinois 60439 (United States); O'Leary, C. D. [School of Sciences, Staffordshire University, Stoke-on-Trent, ST4 2DE (United Kingdom); Schwartz, J. [Argonne National Laboratory, 9700 South Cass Ave, Illinois 60439 (United States); A. W. Wright Nuclear Structure Laboratory, Yale University, New Haven, Connecticut 06511 (United States); Toermaenen, S. [Niels Bohr Institute Tandem Accelerator Laboratory, Risoe, DK-4000, Roskilde (Denmark); Department of Physics, University of Jyvaekylae, Jyvaekylae (Finland)

    1998-12-21

    The decay scheme of the N=Z odd-odd nucleus, {sup 62}Ga has been deduced for the first time using the reactions {sup 40}Ca({sup 24}Mg,pn){sup 62}Ga and {sup 40}Ca({sup 28}Si,{alpha}pn){sup 62}Ga at beam energies of 65 MeV and 88 MeV respectively. Transitions from excited states in {sup 62}Ga were identified using the PEX apparatus at the Niels Bohr Institute Tandem Accelerator Laboratory. Gamma ray angular correlation data collected using the AYEBALL array at the Argonne National Laboratory are consistent with a cascade of stretched E2 transitions which decay from a spin 1{sup +} bandhead via a pure magnetic dipole decay, directly linking a proposed T=0 structure with the T=1, J{sup {pi}}=0{sup +} ground state.

  10. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    director cds murder nudity soundtrack BBC movie releases footage worth documentary film Blu-rays Blu-ray Ga

  11. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  12. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  13. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  14. Notices ACTION: Notice.

    Office of Environmental Management (EM)

    8867 Federal Register Vol. 80, No. 215 Friday, November 6, 2015 Notices ACTION: Notice. SUMMARY: This notice announces EPA's receipt of an application 91163-EUP-R from Texas...

  15. Notices ACTION: Notice.

    Energy Savers [EERE]

    867 Federal Register Vol. 80, No. 215 Friday, November 6, 2015 Notices ACTION: Notice. SUMMARY: This notice announces EPA's receipt of an application 91163-EUP-R from Texas...

  16. EIS-0195: Remedial Actions at Operable Unit 4, Fernald Environmental Management Project, Fernald, Ohio

    Broader source: Energy.gov [DOE]

    This EIS evaluates the potential environmental impacts of a proposal to conduct remedial action at Operable Unit 4 at the Fernald Environmental Management Project.

  17. Corrective Action Program Guide

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    2006-03-02

    This Guide was developed to assist the Department of Energy (DOE) organizations and contractors in the development, implementation, and followup of corrective action programs utilizing the feedback and improvement core safety function within DOE's Integrated Safety Management System. This Guide outlines some of the basic principles, concepts, and lessons learned that DOE managers and contractors might consider when implementing corrective action programs based on their specific needs. Canceled by DOE G 414.1-2B. Does not cancel other directives.

  18. Proposal Study Panels

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposal Study Panels Proposal Study Panels Print Two Proposal Study Panels (PSPs) exist at the ALS: one for the general sciences and one for structural biology. The role of the...

  19. Categories for IGPPS Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    postdoc's total salary for the fiscal year. Proposals will be for one year only, though renewal proposals for an additional year may be considered. Postdocs entering their first,...

  20. Trident Call for Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Call for Proposals Trident Call for Proposals Enabling world-class science in high-energy density physics and fundamental laser-matter interactions Contact Operations Team...

  1. Bondholders and Securities Class Actions

    E-Print Network [OSTI]

    Park, James

    2015-01-01

    2006). 89. See Consolidated Class Action Complaint ¶¶ 42–53,Sept. 30, 2005); Consolidated Class Action Complaint ¶ 1, Inlikely to satisfy various class certification hurdles. See

  2. Climate Action Plan 2013 Update

    E-Print Network [OSTI]

    Rose, Michael R.

    UC Irvine Climate Action Plan 2013 Update #12;CLIMATE ACTION PLAN - 2013 UPDATE 1 TABLE OF CONTENTS CLIMATE PROTECTION GOALS...............................................................18 OPPORTUNITIES-2050 CLIMATE NEUTRALITY.........................................................29 MEDICALCENTER IMPLEMENTATION

  3. Scientific Achievement Networks of highly photoresponsive crystalline GaSe

    E-Print Network [OSTI]

    Geohegan, David B.

    Scientific Achievement Networks of highly photoresponsive crystalline GaSe nanosheets a crystalline GaSe target was adjusted to directly grow networks of interconnected triangular GaSe crystalline nanosheets of ~ 200 nm size (inset shows atomic

  4. Polarization self-screening in [0001] oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Liu, Wei; Ju, Zhengang; Tiam Tan, Swee; Ji, Yun; Zhang, Xueliang; Wang, Liancheng; Kyaw, Zabu; Wei Sun, Xiao, E-mail: exwsun@ntu.edu.sg, E-mail: volkan@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Volkan Demir, Hilmi, E-mail: exwsun@ntu.edu.sg, E-mail: volkan@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey)

    2014-06-23

    InGaN/GaN light-emitting diodes (LEDs) grown along the [0001] orientation inherit very strong polarization induced electric fields. This results in a reduced effective conduction band barrier height for the p-type AlGaN electron blocking layer (EBL) and makes the electron blocking effect relatively ineffective and the electron injection efficiency drops. Here, we show the concept of polarization self-screening for improving the electron injection efficiency. In this work, the proposed polarization self-screening effect was studied and proven through growing a p-type EBL with AlN composition partially graded along the [0001] orientation, which induces the bulk polarization charges. These bulk polarization charges are utilized to effectively self-screen the positive polarization induced interface charges located at the interface between the EBL and the last quantum barrier when designed properly. Using this approach, the electron leakage is suppressed and the LED performance is enhanced significantly.

  5. Plasma nitridation of thin Si layers for GaAs dielectrics D. M. Diatezua,b)

    E-Print Network [OSTI]

    Rockett, Angus

    logarithmically with time. A model based on electron tunneling is proposed to explain the results. Capacitance suc- cessful FETs without electron confinement in the ICL and with low midgap trap densities at the Ga to an electron cyclotron resonance nitrogen plasma for varying times. The nitride thickness is shown to increase

  6. Microsoft Word - Proposed Sampling UGTA Wells FY15-19.docx

    National Nuclear Security Administration (NNSA)

    Proposed Sampling of Underground Test Area Wells 2015-2019 1 Frenchman Flat Corrective Action Unit Number of Wells* Sampling Frequency (years) Analytes Tritium Detection Method...

  7. Wilson Line Integrals in the Unparticle Action

    E-Print Network [OSTI]

    A. Lewis Licht

    2008-05-25

    We consider the unparticle action that is made gauge invariant by inclusion of an open Wilson line factor. In deriving vertexes from such an action it has been customary to use a form of differentiating the Wilson line originally proposed by Mandelstam. Using a simple example, we show that the Mandelstam derivative is mathematically inconsistent. We show that there are two ways to define differentiation of the Wilson line. The mathematically consistent method is to differentiate the explicit dependence of the line on the endpoint. The other method is a functional derivative and corresponds in a limiting case to the Mandelstam derivative. We also show that the only path that can be used in the Wilson line integral that leaves the unparticle action both Poincare and scale invariant is the straight line.

  8. Tachyon Dynamics and the Effective Action Approximation

    E-Print Network [OSTI]

    N. D. Lambert; I. Sachs

    2002-09-20

    Recently effective actions have been extensively used to describe tachyon condensation in string theory. While the various effective actions which have appeared in the literature have very similar properties for static configurations, they differ for time-dependent tachyons. In this paper we discuss general properties of non-linear effective Lagrangians which are first order in derivatives. In particular we show that some observed properties, such as asymptotically vanishing pressure, are rather generic features, although the quantative features differ. On the other hand we argue that certain features of marginal tachyon profiles are beyond the reach of any first order Lagrangian description. We also point out that an effective action, proposed earlier, captures the dynamics of tachyons well.

  9. GaNPAs Solar Cells that Can Be Lattice-Matched to Silicon

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; McMahon, W. E.; Ptak, A. J.; Kibbler, A. E.; Olson, J. M.; Kurtz, S.; Kramer, C.; Young, M.; Duda, A.; Reedy, R. C.; Keyes, B. M.; Dippo, P.; Metzger, W. K.

    2003-05-01

    III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We have proposed the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct bandgaps in the range of 1.5 to 2.0 eV. We have demonstrated the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and shown improvements in material quality by reducing carbon and hydrogen impurities through optimization of growth conditions. We have achieved quantum efficiencies (QE) in these cells as high as 60% and PL lifetimes as high as 3.0 ns.

  10. ES H action plan

    SciTech Connect (OSTI)

    Not Available

    1991-01-01

    This document contains planned actions to correct the deficiencies identified in the Pre-Tiger Team Self-Assessment (PTTSA), January 1991, of Sandia National Laboratories (SNL -- Albuquerque, New Mexico; Tonopah, Nevada; and Kauai, Hawaii). The Self-Assessment was conducted by a Self-Assessment Working Group consisting of 19 department managers, with support from Environment, Safety, and Health (ES H) professionals, from October through December 1990. Findings from other past audits, dating back to 1985, were reviewed and compared with the PTTSA findings to determine if additional findings, key findings, or root causes were warranted. The resulting ES H Action Plan and individual planned actions were prepared by the ES H Action Plan Project Group with assistance from the Program owners/authors during February and March 1991. The plan was reviewed by SNL Management in April 1991. This document serves as a planning instrument for the Laboratories to aid in the scoping and sizing of activities related to ES H compliance for the coming five years. It will be modified as required to ensure a workload/funding balance and to address the findings resulting from the Tiger Team assessment at SNL, Albuquerque. The process of producing this document has served well to prepare SNL, Albuquerque, for the coming task of producing the required post-Tiger Team action plan document. 8 tabs.

  11. Development of metallization for GaAs and AlGaAs concentrator solar cells

    SciTech Connect (OSTI)

    Tobin, S.P.

    1987-04-01

    A three-layer metallization system was developed for high temperature stability on GaAs and AlGaAs solar cells. The layers are a Pt ohmic contact metal that forms thermally stable compounds with GaAs, a TiN diffusion barrier, and a gold conductor. The solar cell structure was also designed for contact stability, with the key component being a heavily doped GaAs cap layer. Reactively sputtered TiN was found to act as an excellent barrier when deposited under the proper conditions. The conditions were carefully optimized for low resistivity and low stress in the films. A low but nonzero substrate bias during sputtering was found to be important. Solar cells with sputtered metallizations of Pt/TiN/Ti/Pt/Au were found to be thermally stable up to 500/sup 0/C for 15 minutes in vacuum. At 600/sup 0/C there was catastrophic degradation of the cells due to dissociation of uncapped GaAs surfaces. Below this temperature the metallization performed as designed. The Pt and GaAs layers reacted to form a stable PtGa compound layer that gave low contact resistance. There was no penetration of Au or GaAs through the barrier layer. These results are a very encouraging first step leading to stable, reliable GaAs and AlGaAs concentrator cells.

  12. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; Worschech, L.; Gru?tzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  13. On Superconnections and the Tachyon Effective Action

    E-Print Network [OSTI]

    Alishahiha, M; Oz, Y; Alishahiha, Mohsen; Ita, Harald; Oz, Yaron

    2001-01-01

    We propose a form of the effective action of the tachyon and gauge fields for brane-antibrane systems and non-BPS Dp-branes, written in terms of the supercurvature. Kink and vortex solutions with constant infinite gauge field strength reproduce the exact tensions of the lower-dimensional D-branes. We discuss the relation to BSFT and other models in the literature.

  14. On Superconnections and the Tachyon Effective Action

    E-Print Network [OSTI]

    Mohsen Alishahiha; Harald Ita; Yaron Oz

    2000-12-22

    We propose a form of the effective action of the tachyon and gauge fields for brane-antibrane systems and non-BPS Dp-branes, written in terms of the supercurvature. Kink and vortex solutions with constant infinite gauge field strength reproduce the exact tensions of the lower-dimensional D-branes. We discuss the relation to BSFT and other models in the literature.

  15. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Liu, Wei; Ju, Zhengang; Tan, Swee Tiam; Ji, Yun; Kyaw, Zabu; Zhang, Xueliang; Wang, Liancheng; Sun, Xiao Wei, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Demir, Hilmi Volkan, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey)

    2014-07-21

    In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate the quantum confined Stark effect (QCSE), caused due to strong polarization induced electric field, through spatially confining electrons and holes in small recombination volumes. However, this inevitably increases the carrier density in quantum wells, which in turn aggravates the Auger recombination, since the Auger recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells with the InN composition linearly grading along the growth orientation in LED structures suppressing the Auger recombination and the QCSE simultaneously. Theoretically, the physical mechanisms behind the Auger recombination suppression are also revealed. The proposed LED structure has experimentally demonstrated significant improvement in optical output power and efficiency droop, proving to be an effective solution to this important problem of Auger recombination.

  16. Ohmic contacts to n-GaSb 

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  17. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  18. EA-1628: Construction and Operation of a Proposed Lignocellulosic Biorefinery, Emmetsburg, Iowa

    Broader source: Energy.gov [DOE]

    This EA evaluated the potential environmental impacts of a DOE proposal to provide financial assistance (the Proposed Action) to POET Project LIBERTY, LLC (POET) for the construction and operation...

  19. Conjugate flow action functionals

    E-Print Network [OSTI]

    Daniele Venturi

    2013-10-15

    We present a new general method to construct an action functional for a non-potential field theory. The key idea relies on representing the governing equations of the theory relative to a diffeomorphic flow of curvilinear coordinates which is assumed to be functionally dependent on the solution field. Such flow, which will be called the conjugate flow of the theory, evolves in space and time similarly to a physical fluid flow of classical mechanics and it can be selected in order to symmetrize the Gateaux derivative of the field equations with respect to suitable local bilinear forms. This is equivalent to requiring that the governing equations of the field theory can be derived from a principle of stationary action on a Lie group manifold. By using a general operator framework, we obtain the determining equations of such manifold and the corresponding conjugate flow action functional. In particular, we study scalar and vector field theories governed by second-order nonlinear partial differential equations. The identification of transformation groups leaving the conjugate flow action functional invariant could lead to the discovery of new conservation laws in fluid dynamics and other disciplines.

  20. CLOSEOUT REPORT REMEDIAL ACTION

    E-Print Network [OSTI]

    FINAL CLOSEOUT REPORT REMEDIAL ACTION AREA OF CONCERN 6 BUILDING 650 RECLAMATION FACILITY SUMP York 11973 REGISTERED TO ISO 14001 #12;AOC 6 BUILDING 650 RECLAMATION FACILITY SUMP AND SUMP OUTFALL .................................................................................9 2.6.1 Final Radiological Status Survey Design

  1. 2014 ALCC Proposals Due

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALCC Proposals Due February 3, 2014 2014 DOE ALCC Proposals Due February 3 December 23, 2013 by Francesca Verdier (0 Comments) DOE's 2014 call for its ASCR Leadership Computing...

  2. Corrective Action Plan for Corrective Action Unit 417: Central Nevada Test Area Surface, Nevada

    SciTech Connect (OSTI)

    K. Campbell

    2000-04-01

    This Corrective Action Plan provides methods for implementing the approved corrective action alternative as provided in the Corrective Action Decision Document for the Central Nevada Test Area (CNTA), Corrective Action Unit (CAU) 417 (DOE/NV, 1999). The CNTA is located in the Hot Creek Valley in Nye County, Nevada, approximately 137 kilometers (85 miles) northeast of Tonopah, Nevada. The CNTA consists of three separate land withdrawal areas commonly referred to as UC-1, UC-3, and UC-4, all of which are accessible to the public. CAU 417 consists of 34 Corrective Action Sites (CASs). Results of the investigation activities completed in 1998 are presented in Appendix D of the Corrective Action Decision Document (DOE/NV, 1999). According to the results, the only Constituent of Concern at the CNTA is total petroleum hydrocarbons (TPH). Of the 34 CASs, corrective action was proposed for 16 sites in 13 CASs. In fiscal year 1999, a Phase I Work Plan was prepared for the construction of a cover on the UC-4 Mud Pit C to gather information on cover constructibility and to perform site management activities. With Nevada Division of Environmental Protection concurrence, the Phase I field activities began in August 1999. A multi-layered cover using a Geosynthetic Clay Liner as an infiltration barrier was constructed over the UC-4 Mud Pit. Some TPH impacted material was relocated, concrete monuments were installed at nine sites, signs warning of site conditions were posted at seven sites, and subsidence markers were installed on the UC-4 Mud Pit C cover. Results from the field activities indicated that the UC-4 Mud Pit C cover design was constructable and could be used at the UC-1 Central Mud Pit (CMP). However, because of the size of the UC-1 CMP this design would be extremely costly. An alternative cover design, a vegetated cover, is proposed for the UC-1 CMP.

  3. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  4. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2007-01-01

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  5. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys Weili Liua and Alexander A. Balandin have investigated theoretically the thermoelectric effects in wurtzite GaN crystals and AlxGa1-xN-based alloys may have some potential as thermoelectric materials at high temperature. It was found

  6. Semi-automated lab-on-a-chip for dispensing GA-68 radiotracers

    SciTech Connect (OSTI)

    Weinberg, Irving

    2014-03-12

    We solved a technical problem that is hindering American progress in molecular medicine, and restricting US citizens from receiving optimal diagnostic care. Specifically, the project deals with a mother/daughter generator of positron-emitting radiotracers (Ge-68/Ga-68). These generator systems are approved in Europe but cannot be used in the USA, because of safety issues related to possible breakthrough of long-lived Ge-68 (mother) atoms. Europeans have demonstrated abilities of Ga-68-labeled radiotracers to image cancer foci with high sensitivity and specificity, and to use such methods to effectively plan therapy.The USA Food and Drug Administration (FDA) and Nuclear Regulatory Commission (NRC) have taken the position that every patient administration of Ga-68 should be preceded by an assay demonstrated that Ge-68 breakthrough is within acceptable limits. Breakthrough of parent elements is a sensitive subject at the FDA, as evidenced by the recent recall of Rb-82 generators due to inadvertent administrations of Sr-82. Commercially, there is no acceptable rapid method for assaying breakthrough of Ge-68 prior to each human administration. The gamma emissions of daughter Ga-68 have higher energies than the parent Ge-68, so that the shielding assays typically employed for Mo-99/Tc-99m generators cannot be applied to Ga-68 generators. The half-life of Ga-68 is 68 minutes, so that the standard 10-half-life delay (used to assess breakthrough in Sr-82/Rb-82 generators) cannot be applied to Ga-68 generators. As a result of the aforementioned regulatory requirements, Ga-68 generators are sold in the USA for animal use only.The American clinical community’s inability to utilize Ga-68 generators impairs abilities to treat patients domestically, and puts the USA at a disadvantage in developing exportable products. The proposed DOE project aimed to take advantage of recent technological advances developed for lab-on-a-chip (LOC) applications. Based on our experiences constructing such devices, the proposed microfluidics-based approach could provide cost-effective validation of breakthrough compliance in minutes.

  7. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  8. Issues associated with the metalorganic chemical vapor deposition of ScGaN and YGaN alloys.

    SciTech Connect (OSTI)

    Koleske, Daniel David; Knapp, James Arthur; Lee, Stephen Roger; Crawford, Mary Hagerott; Creighton, James Randall; Cross, Karen Charlene; Thaler, Gerald

    2009-07-01

    The most energy efficient solid state white light source will likely be a combination of individually efficient red, green, and blue LED. For any multi-color approach to be successful the efficiency of deep green LEDs must be significantly improved. While traditional approaches to improve InGaN materials have yielded incremental success, we proposed a novel approach using group IIIA and IIIB nitride semiconductors to produce efficient green and high wavelength LEDs. To obtain longer wavelength LEDs in the nitrides, we attempted to combine scandium (Sc) and yttrium (Y) with gallium (Ga) to produce ScGaN and YGaN for the quantum well (QW) active regions. Based on linear extrapolation of the proposed bandgaps of ScN (2.15 eV), YN (0.8 eV) and GaN (3.4 eV), we expected that LEDs could be fabricated from the UV (410 nm) to the IR (1600 nm), and therefore cover all visible wavelengths. The growth of these novel alloys potentially provided several advantages over the more traditional InGaN QW regions including: higher growth temperatures more compatible with GaN growth, closer lattice matching to GaN, and reduced phase separation than is commonly observed in InGaN growth. One drawback to using ScGaN and YGaN films as the active regions in LEDs is that little research has been conducted on their growth, specifically, are there metalorganic precursors that are suitable for growth, are the bandgaps direct or indirect, can the materials be grown directly on GaN with a minimal defect formation, as well as other issues related to growth. The major impediment to the growth of ScGaN and YGaN alloys was the low volatility of metalorganic precursors. Despite this impediment some progress was made in incorporation of Sc and Y into GaN which is detailed in this report. Primarily, we were able to incorporate up to 5 x 10{sup 18} cm{sup -3} Y atoms into a GaN film, which are far below the alloy concentrations needed to evaluate the YGaN optical properties. After a no-cost extension was granted on this program, an additional more 'liquid-like' Sc precursor was evaluated and the nitridation of Sc metals on GaN were investigated. Using the Sc precursor, dopant level quantities of Sc were incorporated into GaN, thereby concluding the growth of ScGaN and YGaN films. Our remaining time during the no-cost extension was focused on pulsed laser deposition of Sc metal films on GaN, followed by nitridation in the MOCVD reactor to form ScN. Finally, GaN films were deposited on the ScN thin films in order to study possible GaN dislocation reduction.

  9. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  10. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D?=0.53(×2.1±1) cm² s?¹ that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  11. Proposed environmental remediation at Argonne National Laboratory, Argonne, Illinois

    SciTech Connect (OSTI)

    1997-05-01

    The Department of Energy (DOE) has prepared an Environmental Assessment evaluating proposed environmental remediation activity at Argonne National Laboratory-East (ANL-E), Argonne, Illinois. The environmental remediation work would (1) reduce, eliminate, or prevent the release of contaminants from a number of Resource Conservation and Recovery Act (RCRA) Solid Waste Management Units (SWMUs) and two radiologically contaminated sites located in areas contiguous with SWMUs, and (2) decrease the potential for exposure of the public, ANL-E employees, and wildlife to such contaminants. The actions proposed for SWMUs are required to comply with the RCRA corrective action process and corrective action requirements of the Illinois Environmental Protection Agency; the actions proposed are also required to reduce the potential for continued contaminant release. Based on the analysis in the EA, the DOE has determined that the proposed action does not constitute a major federal action significantly affecting the quality of the human environment within the meaning of the National Environmental Policy Act of 1969 (NEPA). Therefore, the preparation of an Environmental Impact Statement is not required.

  12. Climate Action Plan 2009 Sustainability

    E-Print Network [OSTI]

    Capogna, Luca

    Climate Action Plan September 2009 Sustainability Council This plan outlines methods by which. This document is publicly available at http://sustainability.uark.edu. #12;2 University of Arkansas Climate....................................................................................................................................7 Climate Action Plan Committee

  13. A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations

    SciTech Connect (OSTI)

    Koumetz, Serge D., E-mail: Serge.Koumetz@univ-rouen.fr; Martin, Patrick; Murray, Hugues [Normandie Université-Université de Rouen-ENSICAEN-UMR 6508 LaMIPS, Laboratoire commun CNRS-NXP-PRESTO-ENSICAEN-UCBN 2, rue de la Girafe BP 5120, F-14079 Caen (France)

    2014-09-14

    Experimental results on the diffusion of grown-in beryllium (Be) in indium gallium arsenide (In{sub 0.53}Ga{sub 0.47}As) and indium gallium arsenide phosphide (In{sub 0.73}Ga{sub 0.27}As{sub 0.58}P{sub 0.42}) gas source molecular beam epitaxy alloys lattice-matched to indium phosphide (InP) can be successfully explained in terms of a combined kick-out and dissociative diffusion mechanism, involving neutral Be interstitials (Be{sub i}{sup 0}), singly positively charged gallium (Ga), indium (In) self-interstitials (I{sub III}{sup +}) and singly positively charged Ga, In vacancies (V{sub III}{sup +}). A new numerical method of solution to the system of diffusion equations, based on the finite difference approximations and Bairstow's method, is proposed.

  14. RCRA corrective action and closure

    SciTech Connect (OSTI)

    Not Available

    1995-02-01

    This information brief explains how RCRA corrective action and closure processes affect one another. It examines the similarities and differences between corrective action and closure, regulators` interests in RCRA facilities undergoing closure, and how the need to perform corrective action affects the closure of DOE`s permitted facilities and interim status facilities.

  15. Sodium dichromate expedited response action assessment

    SciTech Connect (OSTI)

    Not Available

    1993-09-01

    The US Environmental Protection Agency (EPA) and Washington Department of Ecology (Ecology) recommended that the US Department of Energy (DOE) perform an expedited response action (ERA) for the Sodium Dichromate Barrel Disposal Landfill. The ERA lead regulatory agency is Ecology and EPA is the support agency. The ERA was categorized as non-time-critical, which required preparation of an engineering evaluation and cost analysis (EE/CA). The EE/CA was included in the ERA proposal. The EE/CA is a rapid, focused evaluation of available technologies using specific screening factors to assess feasibility, appropriateness, and cost. The ERA goal is to reduce the potential for any contaminant migration from the landfill to the soil column, groundwater, and Columbia River. Since the Sodium Dichromate Barrel Disposal Landfill is the only waste site within the operable unit, the removal action may be the final remediation of the 100-IU-4 Operable Unit. This ERA process started in March 1992. The ERA proposal went through a parallel review process with Westinghouse Hanford Company (WHC), DOE Richland Operations (RL), EPA, Ecology, and a 30-day public comment period. Ecology and EPA issued an Action Agreement Memorandum in March 1993 (Appendix A). The memorandum directed excavation of all anomalies and disposal of the collected materials at the Hanford Site Central Landfill. Primary field activities were completed by the end of April 1993. Final waste disposal of a minor quantity of hazardous waste was completed in July 1993.

  16. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  17. Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells

    E-Print Network [OSTI]

    Weinstein, Benard.A.

    recently that the temperature shifts of the photo- and electroluminescence EL peak energies in Nichia greenV/GPa for the green and blue diodes, respectively. The observed pressure coefficients are much lower than those characteristic of the energy gap in GaN ( 40 meV/GPa) or the energy gap in InN ( 33 meV/GPa). This kind

  18. Securities Class Actions and Bankrupt Companies

    E-Print Network [OSTI]

    Park, James J.

    2014-01-01

    the utility of securities class actions. Certainly, contextthe merit of securities class actions. UCLA | SCHOOL OF LAWof James J. Park, Securities Class Actions and Bankrupt

  19. NSF Proposal Preparation 101

    E-Print Network [OSTI]

    /IPAs National Science Board #12;National Science Foundation #12;NSF Web Page #12;Grant Proposal Guide (GPG be returned without review #12;GPG (cont'd) Describes process for withdrawals, returns & declinations and administration processes #12;GPG (cont'd) Details process for submission of collaborative proposals via: Issuance

  20. Doctoral school COURSE PROPOSAL

    E-Print Network [OSTI]

    Jeanjean, Louis

    Doctoral school COURSE PROPOSAL ED SPIM / Course proposal Page 1/2 2013 Title: The Web of data This course will give an overview of the principles of Linked Data along with the Web of Data, as it emerged architectures. This course also presents the concepts and definitions related to the Semantic Web (or Web

  1. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  2. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  3. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore »to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  4. IEEE Energy2030 Atlanta, GA USA

    E-Print Network [OSTI]

    Gross, George

    of an aggregation of battery vehicles for the provision of frequency regulation ­ requiring very fast response timesIEEE Energy2030 Atlanta, GA USA 17-18 November, 2008 Design of a Conceptual Framework for the V2G in common is the batteries, which provide good storage capacity that can be effectively integrated

  5. 495 Tech Way NW Atlanta, GA 30318

    E-Print Network [OSTI]

    Li, Mo

    495 Tech Way NW Atlanta, GA 30318 404.385.0384 comments@energy.gatech.edu Copyright 2014 · Georgia concerns, low-cost, clean, secure energy solutions will be necessary to address our global energy needs and sustain our way of life. Georgia Tech Energy Innovations The Strategic Energy Institute's scientists

  6. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  7. Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

    E-Print Network [OSTI]

    it was discovered by Davydov et al.1 and con- firmed by independent studies2,3 that its band gap is small, EG InN =0 The conduction band offset at GaN/AlN interface was estimated as EQW=0.7 EG AlN -EG GaN =1918 meV. The nanoN/GaN/AlN QW. The depth of the nanogroove is calculated as E0=0.8 EG GaN -EG InxGa1-xN . The band gap of InxGa1

  8. DOE Withdraws Proposed Rulemaking (Test Procedure) and Proposed...

    Energy Savers [EERE]

    DOE Withdraws Proposed Rulemaking (Test Procedure) and Proposed Coverage Determination (Energy Conservation Standard) for Set-Top Boxes DOE Withdraws Proposed Rulemaking (Test...

  9. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lüth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8?×?10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  10. 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly ...

  11. Emission and Excitation Spectra of ZnO:Ga and ZnO:Ga,N Ceramics

    E-Print Network [OSTI]

    P. A. Rodnyi; I. V. Khodyuk; E. I. Gorokhova; S. B. Mikhrin; P. Dorenbos

    2010-09-07

    The spectral characteristics of ZnO:Ga and ZnO:Ga,N ceramics prepared by uniaxial hot pressing have been investigated. At room temperature, the edge (exciton) band at 3.12 eV dominates in the luminescence spectra of ZnO:Ga, while a wide luminescence band at 2.37 eV, which is likely to be due to zinc vacancies, is observed in the spectra of ZnO:Ga,N. Upon heating, the edge band maximum shifts to lower energies and the bandwidth increases. The extrapolated position of the edge-band maximum at zero temperature, Em(0) = 3.367 +/- 0.005 eV, is in agreement with the data for thin zinc oxide films. The luminescence excitation spectra in the range from 3 to 6.5 eV are reported and the mechanism of energy transfer to excitons and luminescence centers is considered.

  12. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Giddings, A. D.; Prosa, T. J.; Larson, D. J. [CAMECA Instruments, Inc., 5500 Nobel Drive, Madison, Wisconsin 53711 (United States); Mano, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  13. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgül Okur; Akdemir, Hande Günay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  14. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  15. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  16. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Haj?asz, M., E-mail: m.hajlasz@m2i.nl [Materials innovation institute (M2i), Mekelweg 2, 2628 CD, Delft (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); Gravesteijn, D. J. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Rietveld, F. J. R. [NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen (Netherlands); Schmitz, J. [MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands)

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  17. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  18. Guam Energy Action Plan

    SciTech Connect (OSTI)

    Conrad, M. D.; Ness, J. E.

    2013-07-01

    Describes the four near-term strategies selected by the Guam Energy Task Force during action planning workshops conducted in March 2013, and outlines the steps being taken to implement those strategies. Each strategy addresses one of the energy sectors identified in the earlier Guam strategic energy plan as being an essential component of diversifying Guam's fuel sources and reducing fossil energy consumption 20% by 2020. The four energy strategies selected are: (1) expanding public outreach on energy efficiency and conservation, (2) establishing a demand-side management revolving loan program, (3) exploring waste-to-energy options, and (4) influencing the transportation sector via anti-idling legislation, vehicle registration fees, and electric vehicles.

  19. Modeling of electronic transport in GaN n-i-p junctions Laboratoire de Physique du Solide, Facults Universitaires Notre-Dame de la Paix, Rue de Bruxelles 61,

    E-Print Network [OSTI]

    Mayer, Alexandre

    Modeling of electronic transport in GaN n-i-p junctions A. Mayera) Laboratoire de Physique du) We propose a model and an algorithm for computing the transport properties of GaN n-i-p devices as cold cathodes2,3 or thermoelectric coolers.4­8 For applications as electronic emitters, the idea

  20. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  1. Accurate characterization and improvement of GaAs microstrip attenuation 

    E-Print Network [OSTI]

    Carroll, James Mason

    1992-01-01

    Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

  2. Remedial action plan and site design for stabilization of the inactive uranium mill tailings sites at Slick Rock, Colorado: Remedial Action Selection Report. Preliminary final

    SciTech Connect (OSTI)

    Not Available

    1994-03-01

    This proposed remedial action plan incorporates the results of detailed investigation of geologic, geomorphic, and seismic conditions at the proposed disposal site. The proposed remedial action will consist of relocating the uranium mill tailings, contaminated vicinity property materials, demolition debris, and windblown/waterborne materials to a permanent repository at the proposed Burro Canyon disposal cell. The proposed disposal site will be geomorphically stable. Seismic design parameters were developed for the geotechnical analyses of the proposed cell. Cell stability was analyzed to ensure long-term performance of the disposal cell in meeting design standards, including slope stability, settlement, and liquefaction potential. The proposed cell cover and erosion protection features were also analyzed and designed to protect the RRM (residual radioactive materials) against surface water and wind erosion. The location of the proposed cell precludes the need for permanent drainage or interceptor ditches. Rock to be used on the cell top-, side-, and toeslopes was sized to withstand probable maximum precipitation events.

  3. Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors

    E-Print Network [OSTI]

    Chung, Jinwook W. (Jinwook Will)

    2008-01-01

    In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

  4. Orbifolding the Membrane Action

    E-Print Network [OSTI]

    Seiji Terashima; Futoshi Yagi

    2008-12-08

    We study a simple class of orbifolds of the N=6 Chern-Simons Matter theory proposed by Aharony, Bergman, Jafferis and Maldacena. They are considered as a world volume theory of membranes probing C^4/ (Z_k x Z_n) and include a new membrane theory with N=4 supersymmetries. We find that the moduli spaces of them are consistent with the fact that they probe C^4/ (Z_k x Z_n).

  5. Critical Legal Consciousness in Action

    E-Print Network [OSTI]

    Cummings, Scott L

    2007-01-01

    www.ufcw.org/take_action/walmart_workers_campaign_info/Editorial, Global Retailing: WalMart’s Waterloo, Guardian (Buffer Zones Would Prevent Walmart, Others, Park La Brea

  6. JAS - a Java action semantics

    E-Print Network [OSTI]

    Brown, D.F.; Watt, D.A.

    Brown,D.F. Watt,D.A. Proceedings of 2nd International Workshop on Action Semantics pp 43-56 Dept of Computer Science, University of Aarhus

  7. QCD Thermodynamics with Improved Actions

    E-Print Network [OSTI]

    Karsch, Frithjof; Engels, J; Joswig, R; Laermann, E; Peikert, A; Petersson, B

    1996-01-01

    The thermodynamics of the SU(3) gauge theory has been analyzed with tree level and tadpole improved Symanzik actions. A comparison with the continuum extrapolated results for the standard Wilson action shows that improved actions lead to a drastic reduction of finite cut-off effects already on lattices with temporal extent $N_\\tau=4$. Results for the pressure, the critical temperature, surface tension and latent heat are presented. First results for the thermodynamics of four-flavour QCD with an improved staggered action are also presented. They indicate similarly large improvement factors for bulk thermodynamics.

  8. A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+

    E-Print Network [OSTI]

    McKittrick, Joanna

    A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

  9. Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers

    E-Print Network [OSTI]

    Jalali. Bahram

    Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico optical, electrical, and spectral response characteristics of three-stack InAs/GaAs quantum dot solar

  10. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  11. A proposed gravitodynamic theory

    E-Print Network [OSTI]

    T. Chang

    1997-03-18

    This paper proposes a gravitodynamic theory because there are similarities between gravitational theory and electrodynamics. Based on Einstein's principle of equivalence, two coordinate conditions are proposed into the four-dimensional line element and transformations. As a consequence,the equation of motion for gravitational force or inertial force has a form similar to the equation of Lorentz force on a charge in electrodynamics. The inertial forces in auniformly rotating system are calculated, which show that the Coriolis force is produced by a magnetic-type gravitational field. We have also calculated the Sagnac effect due to the rotation. These experimental facts strongly support our proposed coordinate conditions. In addition, the gravitodynamic field equations are briefly discussed. Since only four gravitational potentials (3 + 1 split) enter the metric tensor, the gravitodynamic field equations in ``3+1 split" form would be analogous to Maxwell's equations.

  12. Nucleon axial charge from quenched lattice QCD with domain wall fermions and improved gauge action

    E-Print Network [OSTI]

    Shoichi Sasaki; Tom Blum; Shigemi Ohta; Kostas Orginos

    2001-10-12

    In our previous DWF calculation with the Wilson gauge action at $\\beta=6.0$ ($a^{-1}\\simeq$ 1.9 GeV) on a $16^3 \\times 32 \\times 16$ lattice, we found that $\\Ga$ had a fairly strong dependence on the quark mass. A simple linear extrapolation of $\\Ga$ to the chiral limit yielded a value that was almost a factor of two smaller than the experimental one. Here we report our recent study of this issue. In particular, we investigate possible errors arising from finite lattice volume, especially in the lighter quark mass region. We employ a RG-improved gauge action (DBW2), which maintains very good chiral behavior even on a coarse lattice ($a^{-1}\\simeq$ 1.3 GeV), in order to perform simulations at large physical volume ($> (2{\\rm fm})^3$). Our preliminary results suggest that the finite volume effect is significant.

  13. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  14. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    solar cells are triple-junction concentrator devices, with each junction efficiently col- lecting subcell in a multijunction de- vice. GaAs0.66 P0.34 single-junction solar cells with Eg = 1.83 eV were56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar

  15. Proposal Study Panels

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeedingProgramExemptions |(Conference)Project TourVehicles &ProposalProposal

  16. BIOMASS ACTION PLAN FOR SCOTLAND

    E-Print Network [OSTI]

    BIOMASS ACTION PLAN FOR SCOTLAND #12; #12;© Crown copyright 2007 ISBN: 978 0 7559 6506 9 Scottish% recyclable. #12;A BIOMASS ACTION PLAN FOR SCOTLAND #12;#12;1 CONTENTS FOREWORD 3 1. EXECUTIVE SUMMARY 5 2. INTRODUCTION 9 3. WIDER CONTEXT 13 4. SCOTLAND'S ROLE IN THE UK BIOMASS STRATEGY 17 5. BIOMASS HEATING 23 6

  17. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  18. Proposed Drill Sites

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Lane, Michael

    Proposed drill sites for intermediate depth temperature gradient holes and/or deep resource confirmation wells. Temperature gradient contours based on shallow TG program and faults interpreted from seismic reflection survey are shown, as are two faults interpreted by seismic contractor Optim but not by Oski Energy, LLC.

  19. Proposed Drill Sites

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Lane, Michael

    2013-06-28

    Proposed drill sites for intermediate depth temperature gradient holes and/or deep resource confirmation wells. Temperature gradient contours based on shallow TG program and faults interpreted from seismic reflection survey are shown, as are two faults interpreted by seismic contractor Optim but not by Oski Energy, LLC.

  20. PROJECT PROPOSAL FPGA PAINT

    E-Print Network [OSTI]

    PROJECT PROPOSAL FPGA PAINT Design of Embedded Systems, Advanced Course Faculty to develop a paint program on Digilent Nexys2 FPGA board. We expect it to be a platform of painting on a plain space or painting an existing picture outline with color. There would be options for changing

  1. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  2. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arès, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  3. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  4. The impact of nanoperforation on persistent photoconductivity and optical quenching effects in suspended GaN nanomembranes

    SciTech Connect (OSTI)

    Volciuc, Olesea, E-mail: olesea.volciuc@gmail.com [Institute of Solid State Physics, University of Bremen, Bremen 28334 (Germany) [Institute of Solid State Physics, University of Bremen, Bremen 28334 (Germany); National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova, Republic of); Braniste, Tudor [National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova, Republic of)] [National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova, Republic of); Tiginyanu, Ion, E-mail: tiginyanu@asm.md [National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova, Republic of) [National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova, Republic of); Institute of Electronic Engineering and Nanotechnologies, Academy of Sciences of Moldova, Chisinau 2028 (Moldova, Republic of); Stevens-Kalceff, Marion A. [School of Physics, University of New South Wales, Sydney NSW 2052 (Australia)] [School of Physics, University of New South Wales, Sydney NSW 2052 (Australia); Ebeling, Jakob; Aschenbrenner, Timo; Hommel, Detlef; Gutowski, Jürgen [Institute of Solid State Physics, University of Bremen, Bremen 28334 (Germany)] [Institute of Solid State Physics, University of Bremen, Bremen 28334 (Germany); Ursaki, Veaceslav [Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau 2028 (Moldova, Republic of)] [Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau 2028 (Moldova, Republic of)

    2013-12-09

    We report on fabrication of suspended ?15?nm thick GaN membranes nanoperforated in an ordered fashion using direct writing of negative charges by focused ion beam and subsequent photoelectrochemical etching of GaN epilayers. Both continuous and nanoperforated membranes exhibit persistent photoconductivity (PPC), which can be optically quenched under excitation by 546?nm radiation. Optical quenching of PPC occurs also under relatively intense intrinsic excitation of nanoperforated membranes by 355?nm radiation at T?proposed explanation is based on strong surface localization of charge carriers in nanoperforated membranes and UV-induced reactions occurring at surface states under intense intrinsic excitation.

  5. EVMS Certification CAR/CIO Status 4/24/12 Corrective Action Requests (CARs)

    E-Print Network [OSTI]

    Princeton Plasma Physics Laboratory

    EVMS Certification CAR/CIO Status 4/24/12 Corrective Action Requests (CARs) Page 1 of 6 CAR01: Acceleration of schedule and added scope without formal baseline change Recommendation and DOEOFES. Action Taken ­ CAR01: ­ An Engineering Change Proposal (ECP004) was approved (10Nov2011

  6. Exploring the Space of a Human Action Yaser Sheikh Mumtaz Sheikh Mubarak Shah

    E-Print Network [OSTI]

    Sheikh, Yaser Ajmal

    of variability: (1) viewpoint, (2) execution rate, and (3) anthropometry of actors, and propose a model of human. Anthropometry In general, an action can be executed, irrespec- tive of the size or gender of the actor

  7. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  8. Enforcement actions: Significant actions resolved individual actions. Semiannual progress report, January 1996--June 1996

    SciTech Connect (OSTI)

    1996-08-01

    This document summarizes significant enforcement actions that have been resolved during the period of January-June 1996. The report includes copies of Orders and Notices of Violations sent by the Nuclear Regulatory Commission to individuals with respect to the enforcement actions.

  9. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  10. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  11. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  12. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  13. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  14. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  15. GaN based nanorods for solid state lighting

    SciTech Connect (OSTI)

    Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

    2012-04-01

    In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

  16. RCRA corrective action: Work plans

    SciTech Connect (OSTI)

    Not Available

    1995-02-01

    This Information Brief describes the work plans that owners/operators may have to prepare in conjunction with the performance of corrective action for compliance with RCRA guidelines. In general, the more complicated the performance of corrective action appears from the remedial investigation and other analyses, the more likely it is that the regulator will impose work plan requirements. In any case, most owner/operators will prepare work plans in conjunction with the performance of corrective action processes as a matter of best engineering management practices.

  17. GaInNAs Structures Grown by MBE for High-Efficiency Solar Cells: Final Report; 25 June 1999--24 August 2002

    SciTech Connect (OSTI)

    Tu, C. W.

    2003-08-01

    The focus of this work is to improve the quality of GaInNAs by advanced thin-film growth techniques, such as digital-alloy growth techniques and migration-enhanced epitaxy (MEE). The other focus is to further investigate the properties of such materials, which are potentially beneficial for high-efficiency, multijunction solar cells. 400-nm-thick strain-compensated Ga0.92In0.08As/GaN0.03As0.97 short-period superlattices (SPSLs) are grown lattice-matched to GaAs substrates. The photoluminescence (PL) intensity of digital alloys is 3 times higher than that of random alloys at room temperature, and the improvement is even greater at low temperature, by a factor of about 12. The room-temperature PL intensity of the GaInNAs quantum well grown by the strained InAs/GaN0.023As SPSL growth mode is higher by a factor 5 as compare to the continuous growth mode. The SPSL growth method allows for independent adjustment of the In-to-Ga ratio without group III competition. MEE reduces the low-energy tail of PL, and PL peaks become more intense and sharper. The twin peaks photoluminescence of GaNAs grown on GaAs was observed at room temperature. The peaks splitting increase with increase in nitrogen alloy content. The strain-induced splitting of light-hole and heavy-hole bands of tensile-strained GaNAs is proposed as an explanation of such behavior.

  18. Proposed Remedial Action Plan: Proposed Plan for Remedial Action at the Quarry Residuals Operable Unit of the Weldon Spring Site. DOE/OR/21548-724

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and700 GJO-2003-411-TACe - .'pJ3u44 2004 GJ -Landt :

  19. Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire

    SciTech Connect (OSTI)

    Du, Chunhua; Ma, Ziguang; Zhou, Junming; Lu, Taiping; Jiang, Yang; Jia, Haiqiang; Liu, Wuming; Chen, Hong

    2014-04-14

    The asymmetric dual-wavelength (green/blue) coupled InGaN/GaN multiple quantum wells were proposed to modulate the green emission intensity. Electroluminescent measurements demonstrate the conspicuous increment of the green light intensity by decreasing the coupled barrier thickness. This was partly attributed to capture of more carriers when holes tunnel across the thinner barrier from the blue quantum wells, as a hole reservoir, to the green quantum wells. While lower effective barrier height of the blue quantum wells benefits improved hole transportation from p-GaN to the active region. Efficiency droop of the green quantum wells was partially alleviated due to the enhanced injection efficiency of holes.

  20. Webinar for Tribes, States, Local Governments, and Territories on the Clean Power Plan Supplemental Proposal

    Office of Energy Efficiency and Renewable Energy (EERE)

    On Tuesday, October 28, 2014, EPA issued an action related to the proposed Clean Power Plan to cut carbon pollution from power plants. EPA is following through on its commitment made in June to...

  1. ICDF Complex Remedial Action Report

    SciTech Connect (OSTI)

    W. M. Heileson

    2007-09-26

    This Idaho CERCLA Disposal Facility (ICDF) Remedial Action Report has been prepared in accordance with the requirements of Section 6.2 of the INEEL CERCLA Disposal Facility Remedial Action Work Plan. The agency prefinal inspection of the ICDF Staging, Storage, Sizing, and Treatment Facility (SSSTF) was completed in June of 2005. Accordingly, this report has been developed to describe the construction activities completed at the ICDF along with a description of any modifications to the design originally approved for the facility. In addition, this report provides a summary of the major documents prepared for the design and construction of the ICDF, a discussion of relevant requirements and remedial action objectives, the total costs associated with the development and operation of the facility to date, and identification of necessary changes to the Agency-approved INEEL CERCLA Disposal Facility Remedial Action Work Plan and the ICDF Complex Operations and Maintenance Plan.

  2. 2010 Climate Action Plan Environmental

    E-Print Network [OSTI]

    Capecchi, Mario R.

    2010 Climate Action Plan Energy and Environmental Stewardship Initiative: Prepared by: The Office.........................................................................................................................17 4A. Curriculum, Education, and Research environmental stewardship and reduces our own carbon footprint on campus. Through the U's Office

  3. High order Chin actions in path integral Monte Carlo

    SciTech Connect (OSTI)

    Sakkos, K.; Casulleras, J.; Boronat, J.

    2009-05-28

    High order actions proposed by Chin have been used for the first time in path integral Monte Carlo simulations. Contrary to the Takahashi-Imada action, which is accurate to the fourth order only for the trace, the Chin action is fully fourth order, with the additional advantage that the leading fourth-order error coefficients are finely tunable. By optimizing two free parameters entering in the new action, we show that the time step error dependence achieved is best fitted with a sixth order law. The computational effort per bead is increased but the total number of beads is greatly reduced and the efficiency improvement with respect to the primitive approximation is approximately a factor of 10. The Chin action is tested in a one-dimensional harmonic oscillator, a H{sub 2} drop, and bulk liquid {sup 4}He. In all cases a sixth-order law is obtained with values of the number of beads that compare well with the pair action approximation in the stringent test of superfluid {sup 4}He.

  4. GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a

    E-Print Network [OSTI]

    Atwater, Harry

    GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C, crack-free GaInP/GaAs double junction solar cells were grown by metal organic chemical vapor deposition with the world record efficiency is a metamorphic triple junction GaInP/GaAs/Ge cell.6 Alternatively, wafer

  5. UCSF Sustainability Action Plan: Executive Summary

    E-Print Network [OSTI]

    Yamamoto, Keith

    UCSF Sustainability Action Plan: Executive Summary Issue Date: April 21, 2011 #12;UCSF Sustainability Action Plan Executive Summary April 21, 2011 Page 1 Table of Contents An Introduction to the Sustainability Action Plan

  6. Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    -emitting diodes (LEDs) are considered the new generation lighting sources due to their advantages in power Society of America OCIS codes: 230.3670, 230.5590, 160.6000. Nitride-based high-power light devoted to the development of high-brightness GaN-based LEDs [3­5]. Lateral hole spreading is one

  7. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  8. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  9. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  10. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  11. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  12. BP-12 Final Proposal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 OutreachProductswsicloudwsiclouddenDVA N C E D B L O O DBiomassBudget BasicDeliveringOverview: ProgressR8Proposal

  13. Categories for IGPPS Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room News PublicationsAudits &BradburyMay 1, 2013,CafeCarbon-freeCary WhitneyProposal Categories

  14. Proposal Study Panels

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeedingProgramExemptions |(Conference)Project TourVehicles &Proposal

  15. Proposal Study Panels

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeedingProgramExemptions |(Conference)Project TourVehiclesProposal Study Panels

  16. Proposed Conveyance of Land

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeedingProgramExemptions |(Conference)ProjectProposed Settlement for17Conveyance

  17. LANSCE | User Resources | Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory ofDid you notHeat Pumps HeatTechnologies| BlandineHistory From theProposals |

  18. LANSCE | User Resources | Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory ofDid you notHeat Pumps HeatTechnologies| BlandineHistory From theProposals

  19. LANSCE | User Resources | Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesse Bergkamp Graduate student Subtask2 J.N.openNeutronUserProposals dotline

  20. LANSCE | User Resources | Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesse Bergkamp Graduate student Subtask2 J.N.openNeutronUserProposals

  1. 2015 Electricity Form Proposals

    Gasoline and Diesel Fuel Update (EIA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustments (Billion Cubic Feet) Wyoming Dry Natural Gas ReservesAlabama AlabamaSurvey Forms Proposed Changes to

  2. Demonstration of a semipolar (10(1)over-bar(3)over-bar) InGaN/GaN green light emitting diode

    E-Print Network [OSTI]

    2005-01-01

    InGaN / GaN green light emitting diode R. Sharma, a? P. M.green ??525 nm? light emitting diode ?LED?. The fabricated

  3. Environmental Assessment of Remedial Action at the Riverton Uranium Mill Tailings Site, Riverton, Wyoming

    SciTech Connect (OSTI)

    1987-06-01

    The US Department of Energy (DOE) has prepared an environmental assessment (DOE/EA-0254) on the proposed remedial action at the inactive uranium milling site near Riverton, Wyoming. Based on the analyses in the EA, the DOE has determined that the proposed action does not constitute a major Federal action significantly affecting the quality of the human environment within the meaning of the National Environmental Policy Act (NEPA) of 1969 (42 U.S.C. 4321, et seq.). Therefore, the preparation of an environmental impact statement (EIS) is not required.

  4. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19?}m{sup ?2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  5. Structural and optical properties of (Ag,Cu)(In,Ga)Se{sub 2} polycrystalline thin film alloys

    SciTech Connect (OSTI)

    Boyle, J. H.; Shafarman, W. N.; Birkmire, R. W.; McCandless, B. E.

    2014-06-14

    The structural and optical properties of pentenary alloy (Ag,Cu)(In,Ga)Se{sub 2} polycrystalline thin films were characterized over the entire compositional range at a fixed (Cu?+?Ag)/(In?+?Ga) ratio. Films deposited at 550?°C on bare and molybdenum coated soda-lime glass by elemental co-evaporation in a single-stage process with constant incident fluxes exhibit single phase chalcopyrite structure, corresponding to 122 spacegroup (I-42d) over the entire compositional space. Unit cell refinement of the diffraction patterns show that increasing Ag substitution for Cu, the refined a{sub o} lattice constant, (Ag,Cu)-Se bond length, and anion displacement increase in accordance with the theoretical model proposed by Jaffe, Wei, and Zunger. However, the refined c{sub o} lattice constant and (In,Ga)-Se bond length deviated from theoretical expectations for films with mid-range Ag and Ga compositions and are attributed to influences from crystallographic bond chain ordering or cation electronegativity. The optical band gap, derived from transmission and reflection measurements, widened with increasing Ag and Ga content, due to influences from anion displacement and cation electronegativity, as expected from theoretical considerations for pseudo-binary chalcopyrite compounds.

  6. First-principles studies on molecular beam epitaxy growth of GaAs1-xBix

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Luo, Guangfu; Yang, Shujiang; Li, Jincheng; Arjmand, Mehrdad; Szlufarska, Izabela; Brown, April S.; Kuech, Thomas F.; Morgan, Dane

    2015-07-14

    We investigate the molecular beam epitaxy (MBE) growth of GaAs1-xBix film using density functional theory with spin-orbit coupling to understand the growth of this film, especially the mechanisms of Bi incorporation. We study the stable adsorption structures and kinetics of the incident molecules (As? molecule, Ga atom, Bi atom, and Bi? molecule) on the (2 x 1)-Gasub||Bi surface and a proposed q(1 x 1)-Gasub||AsAs surface has a quasi-(1 x 1) As layer above the Ga-terminated GaAs substrate and a randomly oriented As dimer layer on top. We obtain the desorption and diffusion barriers of the adsorbed molecules and also themore »reaction barriers of three key processes related to Bi evolution, namely, Bi incorporation, As/Bi exchange, and Bi clustering. The results help explain the experimentally observed dependence of Bi incorporation on the As/Ga ratio and growth temperature. Furthermore, we find that As? exchange with Bi of the (2 x 1)-Gasub||Bi surface is a key step controlling the kinetics of the Bi incorporation. Finally, we explore two possible methods to enhance the Bi incorporation, namely, replacing the MBE growth mode from codeposition of all fluxes with a sequential deposition of fluxes and applying asymmetric in-plane strain to the substrate.« less

  7. Worldwide Energy Efficiency Action through Capacity Building...

    Open Energy Info (EERE)

    Worldwide Energy Efficiency Action through Capacity Building and Training (WEACT) Jump to: navigation, search Logo: Worldwide Energy Efficiency Action through Capacity Building and...

  8. DOE Announces Additional Energy Efficiency Enforcement Action...

    Office of Environmental Management (EM)

    Energy Efficiency Enforcement Action to Protect Consumers DOE Announces Additional Energy Efficiency Enforcement Action to Protect Consumers January 7, 2010 - 12:00am Addthis...

  9. Energy Agency Coordinators for Energy Action Month

    Broader source: Energy.gov [DOE]

    Agency coordinators serve as primary Federal agency points of contact for Energy Action Month. Contact them if you have questions about implementing an Energy Action Month campaign.

  10. Environmental Management Headquarters Corrective Action Plan...

    Office of Environmental Management (EM)

    I Environmental Management Headquarters Corrective Action Plan - Radiological Release Phase I The purpose of this Corrective Action Plan (CAP) is to specify U.S. Department of...

  11. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  12. High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

    SciTech Connect (OSTI)

    Chang, Chiao-Yun; Li, Hen; Lu, Tien-Chang, E-mail: timtclu@mail.nctu.edu.tw [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300 (China)

    2014-03-03

    In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20?mA and a 27.0% efficiency droop at 100?mA (corresponding to a current density of 69?A/cm{sup 2}), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs.

  13. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  14. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  15. Electronic structure and thermoelectric performance of Zintl compound Sr{sub 3}GaSb{sub 3}: A first-principles study

    SciTech Connect (OSTI)

    Feng Shi, Qing; Li Yan, Yu; Xu Wang, Yuan, E-mail: wangyx@henu.edu.cn [Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004 (China)

    2014-01-06

    By using first-principles method and Boltzmann theory, we simulated the thermoelectric transport properties of p-type and n-type Sr{sub 3}GaSb{sub 3}. It is found that the thermoelectric figure-of merit (ZT) of n-type Sr{sub 3}GaSb{sub 3} is probably better than that of p-type, mainly due to its large band degeneracy. Moreover, a high ZT value of 1.74 at 850?K can be achieved for n-type Sr{sub 3}GaSb{sub 3} along the yy direction, corresponding to the carrier concentration 3.5?×?10{sup 20}?e cm{sup ?3}. We propose that the high ZT value of experimentally synthesized p-type Sr{sub 3}GaSb{sub 3} is originated from appearing of the larger number of band valley on the top of valence bands.

  16. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  17. Corrective Action Decision Document for Corrective Action Unit 562: Waste Systems Nevada Test Site, Nevada, Revision 0

    SciTech Connect (OSTI)

    Mark Krause

    2010-08-01

    This Corrective Action Decision Document (CADD) presents information supporting the selection of corrective action alternatives (CAAs) leading to the closure of Corrective Action Unit (CAU) 562, Waste Systems, in Areas 2, 23, and 25 of the Nevada Test Site, Nevada. This complies with the requirements of the Federal Facility Agreement and Consent Order (FFACO) that was agreed to by the State of Nevada; U.S. Department of Energy (DOE), Environmental Management; U.S. Department of Defense; and DOE, Legacy Management. Corrective Action Unit 562 comprises the following corrective action sites (CASs): • 02-26-11, Lead Shot • 02-44-02, Paint Spills and French Drain • 02-59-01, Septic System • 02-60-01, Concrete Drain • 02-60-02, French Drain • 02-60-03, Steam Cleaning Drain • 02-60-04, French Drain • 02-60-05, French Drain • 02-60-06, French Drain • 02-60-07, French Drain • 23-60-01, Mud Trap Drain and Outfall • 23-99-06, Grease Trap • 25-60-04, Building 3123 Outfalls The purpose of this CADD is to identify and provide the rationale for the recommendation of CAAs for the 13 CASs within CAU 562. Corrective action investigation (CAI) activities were performed from July 27, 2009, through May 12, 2010, as set forth in the CAU 562 Corrective Action Investigation Plan. The purpose of the CAI was to fulfill the following data needs as defined during the data quality objective (DQO) process: • Determine whether COCs are present. • If COCs are present, determine their nature and extent. • Provide sufficient information and data to complete appropriate corrective actions. A data quality assessment (DQA) performed on the CAU 562 data demonstrated the quality and acceptability of the data for use in fulfilling the DQO data needs. Analytes detected during the CAI were evaluated against appropriate final action levels (FALs) to identify the COCs for each CAS. The results of the CAI identified COCs at 10 of the 13 CASs in CAU 562, and thus corrective action is required. Assessment of the data generated from investigation activities conducted at CAU 562 is shown in Table ES-1. Based on the evaluation of analytical data from the CAI, review of future and current operations at the 13 CASs, and the detailed and comparative analysis of the potential CAAs, the following corrective actions are recommended for CAU 562. • No further action is the preferred corrective action for CASs 02-60-01, 02-60-06, and 02-60-07. • Clean closure is the preferred corrective action for CASs 02-26-11, 02-44-02, 02-59-01, 02-60-02, 02-60-03, 02-60-04, 02-60-05, 23-60-01, 23-99-06, and 25-60-04. The preferred CAAs were evaluated on technical merit focusing on performance, reliability, feasibility, safety, and cost. The alternatives were judged to meet all requirements for the technical components evaluated. The alternatives meet all applicable federal and state regulations for closure of the site and will reduce potential exposures to contaminated media to acceptable levels. The DOE, National Nuclear Security Administration Nevada Site Office provides the following recommendations: • No further corrective action is required at CASs 02-60-01, 02-60-06, and 02-60-07. • Clean closure is recommended for the remaining 10 CASs in CAU 562. • A Corrective Action Plan will be submitted to the Nevada Division of Environmental Protection that contains a detailed description of the proposed actions that will be taken to implement the selected corrective actions.

  18. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  19. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

    E-Print Network [OSTI]

    sound velocity in GaN. The cut off wave vector is given by where NA is the Avogadro number, is the mass

  20. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  1. Final voluntary release assessment/corrective action report

    SciTech Connect (OSTI)

    NONE

    1996-11-12

    The US Department of Energy, Carlsbad Area Office (DOE-CAO) has completed a voluntary release assessment sampling program at selected Solid Waste Management Units (SWMUs) at the Waste Isolation Pilot Plant (WIPP). This Voluntary Release Assessment/Corrective Action (RA/CA) report has been prepared for final submittal to the Environmental protection Agency (EPA) Region 6, Hazardous Waste Management Division and the New Mexico Environment Department (NMED) Hazardous and Radioactive Materials Bureau to describe the results of voluntary release assessment sampling and proposed corrective actions at the SWMU sites. The Voluntary RA/CA Program is intended to be the first phase in implementing the Resource Conservation and Recovery Act (RCRA) Facility Investigation (RFI) and corrective action process at the WIPP. Data generated as part of this sampling program are intended to update the RCRA Facility Assessment (RFA) for the WIPP (Assessment of Solid Waste Management Units at the Waste Isolation Pilot Plant), NMED/DOE/AIP 94/1. This Final Voluntary RA/CA Report documents the results of release assessment sampling at 11 SWMUs identified in the RFA. With this submittal, DOE formally requests a No Further Action determination for these SWMUs. Additionally, this report provides information to support DOE`s request for No Further Action at the Brinderson and Construction landfill SWMUs, and to support DOE`s request for approval of proposed corrective actions at three other SWMUs (the Badger Unit Drill Pad, the Cotton Baby Drill Pad, and the DOE-1 Drill Pad). This information is provided to document the results of the Voluntary RA/CA activities submitted to the EPA and NMED in August 1995.

  2. Istanbul,Turkey & Atlanta, GA Istanbul,Turkey

    E-Print Network [OSTI]

    Frantz, Kyle J.

    Istanbul,Turkey & Atlanta, GA Istanbul,Turkey & Atlanta, GA 2012 Media, Journalism and Business for departure to Istanbul,Turkey Day 9 Depart for Istanbul; guided cultural visit upon arrival; group dinner Day business leaders; site visits to local universities Day 18 UPS and the value of logistics inTurkey Day 19

  3. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  4. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-?m transport was observed within an electron spin lifetime of 1.2?ns at room temperature when using an in-plane electric field of 1.75?kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  5. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  6. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  7. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  8. Introduction The degree action approval processes described in this document reflect the official internal

    E-Print Network [OSTI]

    Buehrer, R. Michael

    from the Board of Visitors (BOV) taking approximately 12 months from pre-approval. For example, a new degree proposal that is preapproved in Spring 2013 could be ready for review and approval by the BOV in Spring 2014. Once BOV approval for a degree action is secured, the proposal is forwarded to SCHEV

  9. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  10. Texas Solar Collaboration Action Plan

    SciTech Connect (OSTI)

    Winland, Chris

    2013-02-14

    Texas Solar Collaboration Permitting and Interconenction Process Improvement Action Plan. San Antonio-specific; Investigate feasibility of using electronic signatures; Investigate feasibility of enabling other online permitting processes (e.g., commercial); Assess need for future document management and workflow/notification IT improvements; Update Information Bulletin 153 regarding City requirements and processes for PV; Educate contractors and public on CPS Energy’s new 2013 solar program processes; Continue to discuss “downtown grid” interconnection issues and identify potential solutions; Consider renaming Distributed Energy Resources (DER); and Continue to participate in collaborative actions.

  11. Generation and control of spin-polarized photocurrents in GaMnAs heterostructures

    SciTech Connect (OSTI)

    Bezerra, Anibal T. Farinas, Paulo F.; Studart, Nelson; Degani, Marcos H.; Maialle, Marcelo Z.

    2014-01-13

    Photocurrents are calculated for a specially designed GaMnAs semiconductor heterostructure. The results reveal regions in the infrared range of the energy spectrum, in which the proposed structure is remarkably spin-selective. For such photon energies, the generated photocurrents are strongly spin-polarized. Application of a relatively small static bias in the growth direction of the structure is predicted to efficiently reverse the spin-polarization for some photon energies. This behavior suggests the possibility of conveniently simple switching mechanisms. The physics underlying the results is studied and understood in terms of the spin-dependent properties emerging from the particular potential profile of the structure.

  12. Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model

    SciTech Connect (OSTI)

    Chow, Weng W.; Crawford, Mary H.; Tsao, Jeffrey Y.; Kneissl, Michael

    2010-01-01

    We propose a model to better investigate InGaN light-emitting diode (LED) internal efficiency by extending beyond the usual total carrier density rate equation approach. To illustrate its capability, the model is applied to study intrinsic performance differences between violet and green LEDs. The simulations show performance differences, at different current densities and temperatures, arising from variations in spontaneous emission and heat loss rates. By tracking the momentum-resolved carrier populations, these rate changes are, in turn, traced to differences in bandstructure and plasma heating. The latter leads to carrier distributions that deviate from the quasiequilibrium ones at lattice temperature.

  13. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  14. Impact of defects on the electrical transport, optical properties and failure mechanisms of GaN nanowires.

    SciTech Connect (OSTI)

    Armstrong, Andrew M.; Aubry, Sylvie; Shaner, Eric Arthur; Siegal, Michael P.; Li, Qiming; Jones, Reese E.; Westover, Tyler; Wang, George T.; Zhou, Xiao Wang; Talin, Albert Alec; Bogart, Katherine Huderle Andersen; Harris, C. Thomas; Huang, Jian Yu

    2010-09-01

    We present the results of a three year LDRD project that focused on understanding the impact of defects on the electrical, optical and thermal properties of GaN-based nanowires (NWs). We describe the development and application of a host of experimental techniques to quantify and understand the physics of defects and thermal transport in GaN NWs. We also present the development of analytical models and computational studies of thermal conductivity in GaN NWs. Finally, we present an atomistic model for GaN NW electrical breakdown supported with experimental evidence. GaN-based nanowires are attractive for applications requiring compact, high-current density devices such as ultraviolet laser arrays. Understanding GaN nanowire failure at high-current density is crucial to developing nanowire (NW) devices. Nanowire device failure is likely more complex than thin film due to the prominence of surface effects and enhanced interaction among point defects. Understanding the impact of surfaces and point defects on nanowire thermal and electrical transport is the first step toward rational control and mitigation of device failure mechanisms. However, investigating defects in GaN NWs is extremely challenging because conventional defect spectroscopy techniques are unsuitable for wide-bandgap nanostructures. To understand NW breakdown, the influence of pre-existing and emergent defects during high current stress on NW properties will be investigated. Acute sensitivity of NW thermal conductivity to point-defect density is expected due to the lack of threading dislocation (TD) gettering sites, and enhanced phonon-surface scattering further inhibits thermal transport. Excess defect creation during Joule heating could further degrade thermal conductivity, producing a viscous cycle culminating in catastrophic breakdown. To investigate these issues, a unique combination of electron microscopy, scanning luminescence and photoconductivity implemented at the nanoscale will be used in concert with sophisticated molecular-dynamics calculations of surface and defect-mediated NW thermal transport. This proposal seeks to elucidate long standing material science questions for GaN while addressing issues critical to realizing reliable GaN NW devices.

  15. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect (OSTI)

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  16. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  17. Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns

    E-Print Network [OSTI]

    Jahns, Jürgen

    Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns Current crowding in mesa-structure GaInN/GaN light-emitting diodes (LEDs) grown on insulating and a saturation of the optical output power at high injection currents. It is shown that the optical power

  18. Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors

    E-Print Network [OSTI]

    Florida, University of

    , creating both electron traps and increasing electron tunneling through the defect states [4Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron 2011 a b s t r a c t AlGaN/GaN High Electron Mobility Transistors were found to exhibit a negative

  19. Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat

    E-Print Network [OSTI]

    Shepelyansky, Dima

    Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

  20. Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal

    E-Print Network [OSTI]

    Ozbay, Ekmel

    between GaN and a sapphire substrate, the dislocation scattering mechanism and the electron spillover

  1. Graphene membranes and the Dirac-Born-Infeld action

    E-Print Network [OSTI]

    James Babington

    2011-07-08

    We propose the use of the Dirac-Born-Infeld action in the phenomenological description of graphene sheet dynamics and interactions. Both the electronic properties of the Dirac fermions and the overall dynamics can be incorporated into this model. Classical static configurations, as well as quantum fluctuations of the membrane degrees of freedom can be studied in this framework. This makes it an interesting tool for Casimir physics and novel QED processes.

  2. Atomistic description of the electronic structure of InxGa1xAs alloys and InAsGaAs superlattices

    E-Print Network [OSTI]

    Kent, Paul

    quantum-wells15,20 (InxGa1 xAs)n /InP on InP and (InxGa1 xAs)n /GaAs on GaAs, and v GaAs-embedded InAs quantum dots.21­23 We wish to provide a uniform the- oretical description of the electronic structure-period dependence of the band offsets and interband transitions of InAs/GaAs systems on InP and GaAs substrates. DOI

  3. Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 m; accepted 3 June 2013; published online 19 June 2013) InGaN/GaN light-emitting diodes (LEDs) with graded , which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which

  4. Low-frequency noise in GaNAlGaN heterostructure field-effect transistors at cryogenic temperatures

    E-Print Network [OSTI]

    Pala, Nezih

    that the 1/f noise in GaN/AlGaN HFETs might be caused by electron tunneling from the channel to the traps was practically independent of the frequency of analysis. The model linking this maximum to the electron tunneling Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics

  5. Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

    SciTech Connect (OSTI)

    Spitzer, M.B.; Vernon, S.M.; Wolfson, R.G.; Tobin, S.P.

    1984-01-01

    The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

  6. Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

  7. GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

    E-Print Network [OSTI]

    be well suited for exploitation of long wavelength quantum dot and dilute nitride technology, resulting in single lateral mode emission from an In0.17Ga0.83As double quantum well laser. Introduction: Lasers based on the GaAs materials system offer advan- tages over their InP counterparts, such as the use

  8. Improved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering by nanoparticles

    E-Print Network [OSTI]

    Yu, Edward T.

    of QDs in the context of our work is attractive for achieving long wavelength absorption in solar cells enhancement at all infrared wave- lengths in the device photocurrent spectrum. Epitaxial layer structuresImproved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering

  9. Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high

  10. SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

    E-Print Network [OSTI]

    Florida, University of

    for spacecraft and other long-term sensing applications. However, hydrogen is a dangerous gas for storage for monitoring leakage of hydrogen storage equipment and fuel tanks for spacecraft and hydrogen fuel cellSnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

  11. Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations 

    E-Print Network [OSTI]

    Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

    2007-01-01

    A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

  12. DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS

    E-Print Network [OSTI]

    Honsberg, Christiana

    photovoltaic efficiency of 39% at 236 suns is achieved by a triple-junction GaInP- GaInAs-Ge tandem solar cell [1]. While the achievable efficiency of triple-junction tandem solar cells is restricted to about 40% [2], modeling results show that a tandem solar cell of five junctions or greater, or an equivalent

  13. FUSION ENERGY Actions Needed to

    E-Print Network [OSTI]

    's construction costs through contributions of hardware, personnel, and cash, and DOE is responsible for managing was asked to review DOE's cost and schedule estimates for the U.S. ITER Project. This report examines (1) the reliability of DOE's current cost and schedule estimates, and (3) actions DOE has taken to reduce U.S. ITER

  14. Climate Change Action Plan Report

    E-Print Network [OSTI]

    Hansen, Andrew J.

    Climate Change Action Plan Report Intermountain Region 2013 National Park Service Resource Stewardship and Science Landscape Conservation and Climate Change Division #12;About this Report Each National Park Service is responding to the challenge of climate change; and (2) raise awareness among NPS

  15. Action Required An extra layer

    E-Print Network [OSTI]

    Fernandez, Eduardo

    Action Required An extra layer of protection m A Securian Company State of Florida Group Term Life by Minnesota Life Insurance Company, at rates negotiated exclusively for employees of the State of Florida's right for you and your family, it's important to think about the amount of money your family would need

  16. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect (OSTI)

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  17. Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer

    SciTech Connect (OSTI)

    Yang, Weiquan; Becker, Jacob; Liu, Shi; Kuo, Ying-Shen; Li, Jing-Jing; Zhang, Yong-Hang; Landini, Barbara; Campman, Ken

    2014-05-28

    This paper reports the proposal, design, and demonstration of ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer to optimize light management and minimize non-radiative recombination. According to our recently developed semi-analytical model, this design offers one of the highest potential achievable efficiencies for GaAs solar cells possessing typical non-radiative recombination rates found among commercially available III-V arsenide and phosphide materials. The structure of the demonstrated solar cells consists of an In{sub 0.49}Ga{sub 0.51}P/GaAs/In{sub 0.49}Ga{sub 0.51}P double-heterostructure PN junction with an ultra-thin 300?nm thick GaAs absorber, combined with a 5??m thick Al{sub 0.52}In{sub 0.48}P layer with a textured as-grown surface coated with Au used as a reflective back scattering layer. The final devices were fabricated using a substrate-removal and flip-chip bonding process. Solar cells with a top metal contact coverage of 9.7%, and a MgF{sub 2}/ZnS anti-reflective coating demonstrated open-circuit voltages (V{sub oc}) up to 1.00?V, short-circuit current densities (J{sub sc}) up to 24.5?mA/cm{sup 2}, and power conversion efficiencies up to 19.1%; demonstrating the feasibility of this design approach. If a commonly used 2% metal grid coverage is assumed, the anticipated J{sub sc} and conversion efficiency of these devices are expected to reach 26.6?mA/cm{sup 2} and 20.7%, respectively.

  18. LBNL Frequently Needed Proposal Information

    E-Print Network [OSTI]

    06/05/2014 LBNL Frequently Needed Proposal Information Frequently Needed Proposal information is LBNL Institutional Information that may be required to complete proposals and grant applications. If you do not find the institutional information you need, please contact your OSPIP Contracts Officer

  19. Formation of manganese -doped atomic layer in wurtzite GaN Meng Shi, Abhijit Chinchore, Kangkang Wang, Andrada-Oana Mandru, Yinghao Liu et al.

    E-Print Network [OSTI]

    is formulated based on the experimental data, and implications for possible spintronic applications The importance of spintronics in general was emphati- cally described by Wolf et al.,1 while the possibility to fabri- cate room-temperature spintronic devices based on GaN was proposed by Dietl et al.2 The idea

  20. Action

    National Nuclear Security Administration (NNSA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouthReporteeo | National Nuclear Securityhr INITIATED| NationalRegister

  1. Novel attributes in modeling and optimizing of the new graphene based In{sub x}Ga{sub 1?x}N Schottky barrier solar cells

    SciTech Connect (OSTI)

    Arefinia, Zahra [Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz 51666-14766 (Iran, Islamic Republic of); Asgari, Asghar, E-mail: asgari@tabrizu.ac.ir [Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz 51666-14766 (Iran, Islamic Republic of); School of Electrical, Electronic, and Computer Engineering, University of Western Australia, Crawley, WA 6009 (Australia)

    2014-05-21

    Based on the ability of In{sub x}Ga{sub 1?x}N materials to optimally span the solar spectrum and their superior radiation resistance, solar cells based on p-type In{sub x}Ga{sub 1?x}N with low indium contents and interfacing with graphene film (G/In{sub x}Ga{sub 1?x}N), is proposed to exploit the benefit of transparency and work function tunability of graphene. Then, their solar power conversion efficiency modeled and optimized using a new analytical approach taking into account all recombination processes and accurate carrier mobility. Furthermore, their performance was compared with graphene on silicon counterparts and G/p-In{sub x}Ga{sub 1?x}N showed relatively smaller short-circuits current (?7?mA/cm{sup 2}) and significantly higher open-circuit voltage (?4?V) and efficiency (?30%). The thickness, doping concentration, and indium contents of p-In{sub x}Ga{sub 1?x}N and graphene work function were found to substantially affect the performance of G/p-In{sub x}Ga{sub 1?x}N.

  2. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 × emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 × 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  3. Characterization of Zns-GaP Naon-composites

    SciTech Connect (OSTI)

    Todd, V.

    1993-12-09

    It proved possible to produce consistent, high-quality nanocrystalline ZnS powders with grain sizes as small as 8 nm. These powders are nano-porous and are readily impregnated with GaP precursor, although inconsistently. Both crystal structure and small grain size of the ZnS can be maintained through the use of GaP. Heat treatment of the impregnated powders results in a ZnS-GaP composite structure where the grain sizes of the phases are on the order of 10--20 nm. Conventional powder processing should be able to produce optically dense ceramic compacts with improved mechanical properties and suitable IR transmission.

  4. Nonholonomic constrains: why does not the least action principle leads to equations describing the motion consistent with the physical behaviour?

    E-Print Network [OSTI]

    Umberto Lucia

    2011-02-14

    The least action principle seems not to lead to equations describing the motion consistent with the physical behavior for nonholonomic constrains. Here an answer to this question in proposed.

  5. Action Sheet 36 Final Report

    SciTech Connect (OSTI)

    Kips, R E; Kristo, M J; Hutcheon, I D

    2012-02-24

    Pursuant to the Arrangement between the European Commission DG Joint Research Centre (EC-JRC) and the Department of Energy (DOE) to continue cooperation on research, development, testing, and evaluation of technology, equipment, and procedures in order to improve nuclear material control, accountancy, verification, physical protection, and advanced containment and surveillance technologies for international safeguards, dated 1 September 2008, the IRMM and LLNL established cooperation in a program on the Study of Chemical Changes in Uranium Oxyfluoride Particles under IRMM-LLNL Action Sheet 36. The work under this action sheet had 2 objectives: (1) Achieve a better understanding of the loss of fluorine in UO{sub 2}F{sub 2} particles after exposure to certain environmental conditions; and (2) Provide feedback to the EC-JRC on sample reproducibility and characteristics.

  6. Take the Energy Action Challenge

    K-12 Energy Lesson Plans and Activities Web site (EERE)

    Students will work in pairs or small groups to apply knowledge of energy-wise habits to evaluate energy use in their homes and schools and make recommendations for improved efficiency. They will use an energy audit tool to collect data on their home and school energy habits and present an action plan to their class. Further communication at the school and district level is encouraged.

  7. EM International Program Action Table

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum Based|DepartmentStatement |toDepartmentContributesAdvisoryProgram Action

  8. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  9. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

    2013-05-15

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

  10. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  11. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

    SciTech Connect (OSTI)

    Guo, Lei; Yang, Xuelin Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Feng, Zhihong; Lv, Yuanjie; Wang, Xinqiang; Shen, B.; Ge, Weikun

    2014-12-15

    We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

  12. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

    SciTech Connect (OSTI)

    Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing, E-mail: jqpan@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Chen, Weixi [State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871 (China); Ding, Ying, E-mail: Ying.Ding@glasgow.ac.uk [School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)

    2014-10-06

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ?51?nm at a center wavelength of 1060?nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

  13. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect (OSTI)

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  14. Electrical degradation mechanisms of RF power GaAs PHEMTs

    E-Print Network [OSTI]

    Villanueva, Anita A. (Anita Ariel), 1978-

    2007-01-01

    GaAs Pseudomorphic High-Electron Mobility Transistors (PHEMTs) are widely used in RF power applications. Since these devices typically operate at high power levels and under high voltage biasing, their electrical reliability ...

  15. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  16. ACTION ITEMS STRENGTHENING THE PHYSICS ENTERPRISE

    E-Print Network [OSTI]

    Lozano-Robledo, Alvaro

    1 ACTION ITEMS STRENGTHENING THE PHYSICS ENTERPRISE IN UNIVERSITIES AND NATIONAL LABORATORIES MAY 6 that make demeaning or snide comments, you will find the rewards are great. "Judy Franz, APS #12;3 EXECUTIVE: ACTION ITEMS ..........................................................................5 Physics

  17. Emergence and perceptual guidance of prehensile action 

    E-Print Network [OSTI]

    Smith, Joanne

    2009-01-01

    Successful coordination of prehensile action depends upon the selection and control of appropriate reach and grasp movements. This thesis explores how prehensile actions are shaped and regulated by perceptual information. ...

  18. SEAB Climate Action Plan | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    A presentation on the Climate Action Plan presented by Dr. Jonathan Pershing, Deputy Assistant Secretary for Climate Change at the U.S. Department of Energy. Climate Action Plan...

  19. DOE/EA-1915 MITIGATION ACTION PLAN PROPOSED CONVEYANCE OF LAND AT THE HANFORD SITE,

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submit theCovalent Bonding Low-Cost2 DOE HQSiteo n n e v i l l e P o w e r A d5540EA

  20. Title 40 CFR 1502.14 Alternatives Including the Proposed Action | Open

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEt Al., 2013)Open EnergyTinox JumpInformation NPDES Jump to:31Energy

  1. CEQ Guidance on the Application of NEPA to Proposed Federal Actions...

    Office of Environmental Management (EM)

    with the governments of Mexico and Canada to develop an agreement on transboundary environmental impact assessment in North America, the guidance pertains to all federal agency...

  2. Baseline requirements of the proposed action for the Transportation Management Division routing models

    SciTech Connect (OSTI)

    Johnson, P.E.; Joy, D.S.

    1995-02-01

    The potential impacts associated with the transportation of hazardous materials are important to shippers, carriers, and the general public. This is particularly true for shipments of radioactive material. The shippers are primarily concerned with safety, security, efficiency, and equipment requirements. The carriers are concerned with the potential impact that radioactive shipments may have on their operations--particularly if such materials are involved in an accident. The general public has also expressed concerns regarding the safety of transporting radioactive and other hazardous materials through their communities. Because transportation routes are a central concern in hazardous material transport, the prediction of likely routes is the first step toward resolution of these issues. In response to these routing needs, several models have been developed over the past fifteen years at Oak Ridge National Laboratory (ORNL). The HIGHWAY routing model is used to predict routes for truck transportation, the INTERLINE routing model is used to predict both rail and barge routes, and the AIRPORT locator model is used to determine airports with specified criteria near a specific location. As part of the ongoing improvement of the US Department of Energy`s (DOE) Environmental Management Transportation Management Division`s (EM-261) computer systems and development efforts, a Baseline Requirements Assessment Session on the HIGHWAY, INTERLINE, and AIRPORT models was held at ORNL on April 27, 1994. The purpose of this meeting was to discuss the existing capabilities of the models and data bases and to review enhancements of the models and data bases to expand their usefulness. The results of the Baseline Requirements Assessment Section will be discussed in this report. The discussions pertaining to the different models are contained in separate sections.

  3. Description of Proposed Interim Remedial Action at the Weldon Spring Site.

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and Myers CoMadison - 1325.8.p,Departtient,of

  4. Letter: EPA has reviewed the DOE's proposals for the following four interim response actions

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and MyersHr. Anthony V. Andolina:I 1 '\ LI g.3LTSI9

  5. Proposal of Removal Action in the Southeast Drainage. SE-200-201-1.07.

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and700 GJO-2003-411-TACe - .'pJ3u44 2004 GJ -Landt :

  6. Proposals For Four Interim Response Actions. IR-600-604-1.01.

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and700 GJO-2003-411-TACe - .'pJ3u44 2004 GJ -Landt :

  7. Proposed Interim Response Action, Construction of Ash Pond Isolation System at the Weldon Spring Site.

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and700 GJO-2003-411-TACe - .'pJ3u44 2004 GJ -Landt :

  8. Quarry Waste Removal Proposed Plan Weldon Spring Site Remedial Action Project, Weldon Spring Missouri.

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and700 GJO-2003-411-TACe - .'pJ3u44 2004 GJQ ,_IQR,

  9. Transcript of Proceedings: Quarry Waste Removal Proposed Plan Weldon Spring Site Remedial Action Projec

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal Gas &SCE-SessionsSouth DakotaRobbins and700, 1. .&. ' , c 1afr -.:2yL:iU i.1 '7,

  10. Appliance Standard Program - The FY 2003 Priority -Setting Summary Report and Actions Proposed

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergyTher i n c i p a l De p u t yWaste |4 2014 AnnualDOE's Report to Congress

  11. Appliance Standard Program - The FY 2003 Priority -Setting Summary Report and Actions Proposed - Appendix B

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergyTher i n c i p a l De p u t yWaste |4 2014 AnnualDOE's Report to CongressB: Data

  12. Appliance Standards Program - The FY 2003 Priority Setting Report and Actions Proposed - Appendix C

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergyTher i n c i p a l De p u t yWaste |4 2014 AnnualDOE's Report to CongressB: DataC:

  13. Appliance Standards Program - The FY 2003 Priority Setting Report and Actions Proposed -Appendix A

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergyTher i n c i p a l De p u t yWaste |4 2014 AnnualDOE's Report to CongressB: DataC:A:

  14. CEQ Guidance on the Application of NEPA to Proposed Federal Actions in the

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergyTher i n c i p a l DeInsulation at04-86) (All PreviousCDLB-1003)CEMI

  15. Chromium Project Notice of Proposed Floodplain Action Public Comment Period Closes November 20th,

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergyTher i n c i p a lCaribElectricSouthApplying2-2002 JulyBoth ofProject Notice of

  16. DOE/EA-1915 MITIGATION ACTION PLAN PROPOSED CONVEYANCE OF LAND AT THE HANFORD SITE,

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum Based| Department8, 20153 METHODS DERIVATION-2013,3 DOE/CF-0073EA for Conveyance

  17. Environmental Assessment for Conducting Astrophysics and Other Basic Science Experiments - Chapter 2 Proposed Action and Alternatives

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submitKansasCommunities EnergyU.S.EngineeringRadiation Protection682405 DOE DOE1-12-1

  18. Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Badcock, T. J., E-mail: Thomas.badcock@crl.toshiba.co.uk; Dawson, P.; Davies, M. J. [School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kappers, M. J.; Massabuau, F. C.-P.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

    2014-03-21

    We have studied the carrier recombination dynamics in an InGaN/GaN multiple quantum well structure as a function of emission energy and excitation density between temperatures of 10?K and 100?K. Under relatively low levels of excitation, the photoluminescence (PL) intensity and decay time of emission on the high energy side of the luminescence spectrum decrease strongly between 10?K and 50?K. In contrast, for emission detected on the low energy side of the spectrum, the PL intensity and decay time increase over the same temperature range. These results are consistent with a thermally activated carrier redistribution process in which the (temperature dependent) average timescale for carrier transfer into or out of a localised state depends on the energy of the given state. Thus, the transfer time out of shallow, weakly localised states is considerably shorter than the arrival time into more deeply localised states. This picture is consistent with carriers hopping between localisation sites in an uncorrelated disorder potential where the density of localised states decreases with increasing localisation depth, e.g., a exponential or Gaussian distribution resulting from random alloy disorder. Under significantly higher levels of excitation, the increased occupation fraction of the localised states results in a greater average separation distance between unoccupied localised states, causing a suppression of the spectral and dynamic signatures of the hopping transfer of carriers.

  19. Building Emergency Action Plan Facility Name: _____________________

    E-Print Network [OSTI]

    Powers, Robert

    Building Emergency Action Plan (Template) Facility Name: _____________________ Date Prepared .....................................................................................................................................................3 2. Building Description..................................................................................................................................3 3. Building Emergency Personnel

  20. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

    SciTech Connect (OSTI)

    Ledentsov, N. N., E-mail: nikolay.ledentsov@v-i-systems.com; Shchukin, V. A. [VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623 (Germany); Lyytikäinen, J.; Okhotnikov, O. [Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720 (Finland); Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V. [A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation); Schlichting, S.; Nippert, F.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623 (Germany)

    2014-11-03

    We report on green (550–560?nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (?500?A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (?550?nm at room temperature). At high current densities (>1?kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4?kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14?kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

  1. Unsolicited Proposals | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    for all Unsolicited Proposals is the National Energy Technology Laboratory (NETL) which includes all DOE Program Research Areas. http:www.netl.doe.govbusinessuspunsol.html...

  2. Quantum Chaos via the Quantum Action

    E-Print Network [OSTI]

    H. Kröger

    2002-12-16

    We discuss the concept of the quantum action with the purpose to characterize and quantitatively compute quantum chaos. As an example we consider in quantum mechanics a 2-D Hamiltonian system - harmonic oscillators with anharmonic coupling - which is classically a chaotic system. We compare Poincar\\'e sections obtained from the quantum action with those from the classical action.

  3. Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

    SciTech Connect (OSTI)

    Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

    2014-11-07

    Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280?nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

  4. Environmental Assessment and FONSI Proposed Decontamination and Disassembly of the Argonne Thermal Source Reactor (ATSR) at Argonne National Laboratory

    SciTech Connect (OSTI)

    N /A

    1998-07-15

    The purpose of this project is to protect human health and the environment from risks associated with the contaminated surplus ATSR. The proposed action is needed because the ATSR, a former experimental reactor, contains residual radioactivity and hazardous materials.

  5. Environmental assessment of remedial action at the Naturita Uranium processing site near Naturita, Colorado. Revision 2

    SciTech Connect (OSTI)

    Not Available

    1994-01-01

    The proposed remedial action for the Naturita processing site is relocation of the contaminated materials and debris to the Dry Flats disposal sits, 6 road miles (mi) [10 kilometers (km)) to the southeast. At the disposal site, the contaminated materials would be stabilized and covered with layers of earth and rock. The proposed disposal site is on land administered by the Bureau of Land Management (BLM) and used primarily for livestock grazing. The final disposal sits would cover approximately 57 ac (23 ha), which would be permanently transferred from the BLM to the DOE and restricted from future uses. The remedial action activities would be conducted by the DOE`s Uranium Mill Tailings Remedial Action (UMTRA) Project. The proposed remedial action would result in the loss of approximately 162 ac (66 ha) of soils at the processing and disposal sites; however, 133 ac (55 ha) of these soils at and adjacent to the processing site are contaminated and cannot be used for other purposes. If supplemental standards are approved by the NRC and state of Colorado, approximately 112 ac (45 ha) of contaminated soils adjacent to the processing site would not be cleaned up. This area is steeply sloped. The cleanup of this contamination would have adverse environmental consequences and would be potentially hazardous to remedial action workers. Another 220 ac (89 ha) of soils would be temporarily disturbed during the remedial action. The final disposal site would result in approximately 57 ac (23 ha) being removed from livestock grazing and wildlife use.

  6. Environmental assessment of remedial action at the Naturita uranium processing site near Naturita, Colorado. Revision 3

    SciTech Connect (OSTI)

    Not Available

    1994-02-01

    The proposed remedial action for the Naturita processing site is relocation of the contaminated materials and debris to the Dry Flats disposal site, 6 road miles (mi) [10 kilometers (km)] to the southeast. At the disposal site, the contaminated materials would be stabilized and covered with layers of earth and rock. The proposed disposal site is on land administered by the Bureau of Land Management (BLM) and used primarily for livestock grazing. The final disposal site would cover approximately 57 ac (23 ha), which would be permanently transferred from the BLM to the DOE and restricted from future uses. The remedial action activities would be conducted by the DOE`s Uranium Mill Tailings Remedial Action (UMTRA) Project. The proposed remedial action would result in the loss of approximately 162 ac (66 ha) of soils at the processing and disposal sites; however, 133 ac (55 ha) of these soils at and adjacent to the processing site are contaminated and cannot be used for other purposes. If supplemental standards are approved by the NRC and state of Colorado, approximately 112 ac (45 ha) of contaminated soils adjacent to the processing site would not be cleaned up. This area is steeply sloped. The cleanup of this contamination would have adverse environmental consequences and would be potentially hazardous to remedial action workers. Another 220 ac (89 ha) of soils would be temporarily disturbed during the remedial action. The final disposal site would result in approximately 57 ac (23 ha) being removed from livestock grazing and wildlife use.

  7. Environmental assessment of remedial action at the Naturita Uranium Processing Site near Naturita, Colorado. Revision 4

    SciTech Connect (OSTI)

    Not Available

    1994-05-01

    The Uranium Mill Tailings Radiation Control Act (UMTRCA) of 1978, Public Law (PL) 95-604, authorized the US Department of Energy (DOE) to perform remedial action at the Naturita, Colorado, uranium processing site to reduce the potential health effects from the radioactive materials at the site and at vicinity properties associated with the site. The US Environmental Protection Agency (EPA) promulgated standards for the UMTRCA that contain measures to control the contaminated materials and to protect groundwater quality. Remedial action at the Naturita site must be performed in accordance with these standards and with the concurrence of the US Nuclear Regulatory Commission (NRC) and the state of Colorado. The proposed remedial action for the Naturita processing site is relocation of the contaminated materials and debris to either the Dry Flats disposal site, 6 road miles (mi) [10 kilometers (km)] to the southeast, or a licensed non-DOE disposal facility capable of handling RRM. At either disposal site, the contaminated materials would be stabilized and covered with layers of earth and rock. The proposed Dry Flats disposal site is on land administered by the Bureau of Land Management (BLM) and used primarily for livestock grazing. The final disposal site would cover approximately 57 ac (23 ha), which would be permanently transferred from the BLM to the DOE and restricted from future uses. The remedial action would be conducted by the DOE`s Uranium Mill Tailings Remedial Action (UMTRA) Project. This report discusses environmental impacts associated with the proposed remedial action.

  8. High intensity low temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs

    SciTech Connect (OSTI)

    Shvarts, Maxim Z., E-mail: shvarts@scell.ioffe.ru; Kalyuzhnyy, Nikolay A.; Mintairov, Sergey A.; Soluyanov, Andrei A.; Timoshina, Nailya Kh. [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021 (Russian Federation); Gudovskikh, Alexander S. [Saint-Petersburg Academic University - Nanotechnology Research and Education Centre RAS, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

    2014-09-26

    In the work, the results of an investigation of GaInP/GaInAs/Ge MJ SCs intended for converting concentrated solar radiation, when operating at low temperatures (down to ?190 °C) are presented. A kink of the cell I-V characteristic has been observed in the region close to V{sub oc} starting from ?20°C at operation under concentrated sunlight. The causes for its occurrence have been analyzed and the reasons for formation of a built-in potential barrier for majority charge carriers at the n-GaInP/n-Ge isotype hetero-interface are discussed. The effect of charge carrier transport in n-GaInP/n-pGe heterostructures on MJ SC output characteristics at low temperatures has been studied including EL technique.

  9. The origin and reduction of switching noise in GaAs/AlGaAs lateral gated devices

    E-Print Network [OSTI]

    Davies, John H.

    to cryogenic temperature with all gates grounded to the substrate to protect against electrostatic effects in AlGaAs: electrons `freeze' into deep traps ­ DX centres ­ below about 150 K. The occupation of donors

  10. Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers

    E-Print Network [OSTI]

    Keogh, David Martin

    2006-01-01

    assuming the material growth technology allows for all ofand a relatively immature growth technology, as well as theof the art for InGaN growth technology. Epitaxial growth of

  11. Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties

    SciTech Connect (OSTI)

    Sztein, Alexander, E-mail: asztein@umail.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106 (United States); Bowers, John E.; DenBaars, Steven P.; Nakamura, Shuji [Materials Department, University of California, Santa Barbara, California 93106 (United States); Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2014-01-27

    A novel polarization field engineering based strategy to simultaneously achieve high electrical conductivity and low thermal conductivity in thermoelectric materials is demonstrated. Polarization based electric fields are used to confine electrons into two-dimensional electron gases in GaN/AlN/Al{sub 0.2}Ga{sub 0.8}N superlattices, resulting in improved electron mobilities as high as 1176 cm{sup 2}/Vs and in-plane thermal conductivity as low as 8.9?W/mK. The resulting room temperature ZT values reach 0.08, a factor of four higher than InGaN and twelve higher than GaN, demonstrating the potential benefits of this polarization based engineering strategy for improving the ZT and efficiencies of thermoelectric materials.

  12. Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors 

    E-Print Network [OSTI]

    Johnson, Derek Wade

    2014-07-31

    production is projected to consume ~100,000 wafers per year by 2015 (Yole Development, “Power GaN – 2012 Edition”), this manufacturing breakthrough represents potential savings of ~$17 million per year....

  13. Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

    E-Print Network [OSTI]

    Florida, University of

    2011; published online 21 March 2011 A subnanometer thick interfacial oxide layer present between used to characterize a Ni/AlGaN interfacial oxide layer with subnanometer thickness. The semiconducting

  14. Corrective Action Decision Document/Closure Report for Corrective Action Unit 309: Area 12 Muckpiles, Nevada Test Site, Nevada, Rev. No.: 0 with Errata Sheet

    SciTech Connect (OSTI)

    Alfred Wickline

    2005-12-01

    This Corrective Action Decision Document/Closure Report (CADD/CR) has been prepared for Corrective Action Unit (CAU) 309, Area 12 Muckpiles, Nevada Test Site (NTS), Nevada. The corrective actions proposed in this document are according to the ''Federal Facility Agreement and Consent Order'' (FFACO) that was agreed to by the State of Nevada, U.S. Department of Energy (DOE), and the U.S. Department of Defense (FFACO, 1996). The NTS is approximately 65 miles (mi) northwest of Las Vegas, Nevada (Figure 1-1). Corrective Action Unit 309 is comprised of the three Corrective Action Sites (CASs) (Figure 1-1) listed below: (1) CAS 12-06-09, Muckpile; (2) CAS 12-08-02, Contaminated Waste Dump (CWD); and (3) CAS 12-28-01, I-, J-, and K-Tunnel Debris. Corrective Action Sites 12-06-09 and 12-08-02 will be collectively referred to as muckpiles in this document. Corrective Action Site 12-28-01 will be referred to as the fallout plume because of the extensive lateral area of debris and fallout contamination resulting from the containment failures of the J- and K-Tunnels. A detailed discussion of the history of this CAU is presented in the ''Corrective Action Investigation Plan (CAIP) for Corrective Action Unit 309: Area 12 Muckpiles, Nevada Test Site (NTS), Nevada.'' (NNSA/NSO, 2004). This CADD/CR provides justification for the closure of CAU 309 without further corrective action. This justification is based on process knowledge and the results of the investigative activities conducted according to the CAIP (NNSA/NSO, 2004), which provides information relating to the history, planning, and scope of the investigation. Therefore, this information will not be repeated in this CADD/CR.

  15. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect (OSTI)

    Özduran, Mustafa; Turgut, Kemal; Arikan, Nihat; ?yigör, Ahmet; Candan, Abdullah

    2014-10-06

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  16. Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure

    SciTech Connect (OSTI)

    Khmissi, H.; Baira, M.; Bouzaieene, L.; Saidi, F.; Maaref, H. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Sfaxi, L. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Universite de Sousse Faculte des Sciences de Monastir, Avenue de l'Environnement 5019 Monastir (Tunisia); Bru-Chevallier, C. [Institut des Nanotechnologies de Lyon (INL), CNRS UMR-5270, INSA-LYON, 7, Avenue Jean Capelle, Bat. Blaise Pascal, 69621 Villeurbanne (France)

    2011-03-01

    Optical properties of InAs quantum dots (QDs) inserted in AlGaAs/GaAs modulation doped heterostructure are investigated. To study the effect of carrier transfer behavior on the luminescence of self-assembled quantum dots, a series of sample has been prepared using molecular beam epitaxy (Riber 32 system) in which we have varied the thickness separating the delta dopage and the InAs quantum dots layer. Photoluminescence spectra show the existence of two peaks that can be attributed to transition energies from the ground state (E{sub 1}-HH{sub 1}) and the first excited state (E{sub 2}-HH{sub 2}). Two antagonist effects have been observed, a blue shift of the emission energies result from electron transferred from the AlGaAs/GaAs heterojunction to the InAs quantum dots and a red shift caused by the quantum confined Stark effect due to the internal electric field existing In the AlGaAs/GaAs heterojunction.

  17. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  18. Corrective Action Plan for Corrective Action Unit 271: Areas 25, 26, and 27 Septic Systems, Nevada Test Site, Nevada

    SciTech Connect (OSTI)

    R. B. Jackson

    2003-05-01

    The Areas 25, 26 and 27 Septic Systems are in the Federal Facility Agreement and Consent Order (FFACO) of 1996 as Corrective Action Unit (CAU) 271. This Corrective Action Plan (CAP) provides selected corrective action alternatives and proposes the closure methodology for CAU 271. CAU 271 is located on the Nevada Test Site (NTS) approximately 105 kilometers (65 miles) northwest of Las Vegas, Nevada, and consists of the following 15 Corrective Action Sites (CAS): CAS 25-04-1, Septic System; CAS 25-04-03, Septic System; CAS25-04-04, Septic System; CAS 25-04-08, Septic System; CAS 25-04-09, Septic System; CAS 25-04-10, Septic System; CAS 25-04-11, Septic System; CAS 26-03-01, Contaminated Water Reservoir; CAS 26-04-1, Septic System; CAS 26-04-02, Septic System; CAS 26-05-01, Radioactive Leachfield; CAS-26-05-03, Septic System; CAS 26-05-04, Septic System; CAS 26-05-05, Septic System; and CAS 27-05-02, Leachfield.

  19. A New Action for Heavy Lattice Fermions

    E-Print Network [OSTI]

    Paul B. Mackenzie

    1992-12-14

    I describe a unified formalism for lattice fermions, in which the relativistic action of Wilson and the nonrelativistic and static actions appear as special cases. It is valid at all values of $m_q a$, including $m_q a \\approx 1$. In the limit $m_q a \\ll 1 $, the formulation reduces to the light quark action of Wilson. In the limit $m_q a \\gg 1 $, the formulation reduces to the nonrelativistic action of Thacker and Lepage, and to the static action of Eichten.

  20. Deconstructing (2,0) Proposals

    E-Print Network [OSTI]

    N. Lambert; C. Papageorgakis; M. Schmidt-Sommerfeld

    2013-06-27

    We examine the relationships between three proposals for the six-dimensional (2,0) theory: the DLCQ of hep-th/9707079, hep-th/9712117, the deconstruction prescription of hep-th/0110146, and the five-dimensional maximally supersymmetric Yang-Mills proposal of 1012.2880, 1012.2882. We show that hep-th/0110146 gives a deconstruction of five-dimensional maximally supersymmetric Yang-Mills. The proposal of hep-th/9707079, hep-th/9712117 uses a subset of the degrees of freedom of five-dimensional Yang-Mills and we show that compactification of it on a circle of finite radius agrees with the DLCQ arising from the proposal of 1012.2880, 1012.2882 or from the deconstruction proposal of hep-th/0110146.

  1. Corrective Action Tracking System (CATS) | Department of Energy

    Office of Environmental Management (EM)

    Action Tracking System (CATS) Corrective Action Tracking System (CATS) The CATS web-based database is used to enter, track, and report the status of corrective actions...

  2. Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeedingProgramExemptions |(Conference)Project

  3. Proposal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home RoomPreservation of Fe(II) by Carbon-Rich MatricesstudentsProjectsProperty - THERE ARE NO

  4. Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well

    E-Print Network [OSTI]

    Jalali. Bahram

    Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico, New Mexico 87545 Received 26 February 2007; accepted 1 June 2007; published online 28 June 2007 intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

  5. A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    amplifier using GaN- HEMTs-on-Sapphire. I INTRODUCTION GaN HEMTs have enormous potential for realizing high-power Traveling Wave Power Amplifier circuit (TWPA)[1][2] for realization of wideband power amplifiersWE4A-5 A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs Jane J

  6. Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2

    SciTech Connect (OSTI)

    Hongpinyo, V; Ding, Y H; Dimas, C E; Wang, Y; Ooi, B S; Qiu, W; Goddard, L L; Behymer, E M; Cole, G D; Bond, T C

    2008-06-11

    The authors investigate the effect of intermixing in InGaAs/GaAs quantum well structure using Cu-doped SiO{sub 2}. The incorporation of Cu into the silica film yields larger bandgap shift than typical impurity-free vacancy diffusion (IFVD) method at a lower activation temperature. We also observe enhancement of the photoluminescence (PL) signal from the intermixed InGaAs/GaAs quantum well structure after being cycle-annealed at 850 C.

  7. Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells J. Simon,1,a

    E-Print Network [OSTI]

    Haller, Gary L.

    . INTRODUCTION Triple-junction metamorphic solar cells have reached ef- ficiencies as high as 41.1% by combiningMetamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells J. Simon,1,a S. Tomasulo,1 P-yP solar cells. Tensile-strained GaAsxP1-x buffers grown on GaAs using unoptimized conditions

  8. FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS

    E-Print Network [OSTI]

    Atwater, Harry

    FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS RobynAlAs/InGaAsP/InGaAs triple junction solar cell grown on InP substrate. X-ray diffraction characterization shows high quality solar cell materials. Preliminary 1-sun AM1.5D testing of the triple junction solar cell shows promising

  9. Corrective Action Decision Document for Corrective Action Unit 340: Pesticide Release sites, Nevada Test Site, Nevada

    SciTech Connect (OSTI)

    DOE /NV

    1998-12-08

    This Corrective Action Decision Document has been prepared for Corrective Action Unit 340, the NTS Pesticide Release Sites, in accordance with the Federal Facility Agreement and Consent Order of 1996 (FFACO, 1996). Corrective Action Unit 340 is located at the Nevada Test Site, Nevada, and is comprised of the following Corrective Action Sites: 23-21-01, Area 23 Quonset Hut 800 Pesticide Release Ditch; 23-18-03, Area 23 Skid Huts Pesticide Storage; and 15-18-02, Area 15 Quonset Hut 15-11 Pesticide Storage. The purpose of this Corrective Action Decision Document is to identify and provide a rationale for the selection of a recommended corrective action alternative for each Corrective Action Site. The scope of this Corrective Action Decision Document consists of the following tasks: Develop corrective action objectives; Identify corrective action alternative screening criteria; Develop corrective action alternatives; Perform detailed and comparative evaluations of the corrective action alternatives in relation to the corrective action objectives and screening criteria; and Recommend and justify a preferred corrective action alternative for each Corrective Action Site.

  10. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore »the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  11. Radiation damage of GaAs thin-film solar cells on Si substrates

    SciTech Connect (OSTI)

    Itoh, Y.; Yamaguchi, M.; Nishioka, T.; Yamamoto, A.

    1987-01-15

    1-MeV electron irradiation damages in GaAs thin-film solar cells on Si substrates are examined for the first time. Damage constant for minority-carrier diffusion length in GaAs heteroepitaxial films on Si substrates is found to be the same as that in GaAs homoepitaxial films on GaAs substrates. This agreement suggests that GaAs/Si has the same defect introduction rate with radiation as GaAs/GaAs. The degradation of GaAs solar cells on Si with electron irradiation is less than that of GaAs solar cells on GaAs, because in the present, GaAs films on Si substrates have lower minority-carrier diffusion length compared to GaAs films on GaAs and these films are insensitive to radiation. The p/sup +/-p/sup +/-n AlGaAs-GaAs heteroface solar cell with junction depth of about 0.3 ..mu..m is concluded to be useful for a high-efficiency and radiation-resistant solar cell fabricated on a Si substrate.

  12. Laser Gain and Threshold Properties in Compressive-Strained and Lattice-Matched GaInNAs/GaAs Quantum Wells

    SciTech Connect (OSTI)

    Chow, W.W.; Jones, E.D.; Modine, N.A.; Allerman, A.A.; Kurtz, S.R.

    1999-08-04

    The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GAInNAs/GaAs laser structures.

  13. Metal contacts on ZnSe and GaN

    SciTech Connect (OSTI)

    Duxstad, K J [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering

    1997-05-01

    Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

  14. Structural and optical properties of Ga{sub 2}O{sub 3}:In films deposited on MgO (1 0 0) substrates by MOCVD

    SciTech Connect (OSTI)

    Kong Lingyi; Ma Jin; Luan Caina; Zhu Zhen

    2011-08-15

    Ga{sub 2}O{sub 3}:In films with different indium (In) content x [x=In/(Ga+In) atomic ratio] have been deposited on MgO (1 0 0) substrates by metalorganic chemical vapor deposition (MOCVD). Structural analyses revealed that the film deposited with actual In content (x') of 0.09 was an epitaxial film and the films with x'=0.18 and 0.37 had mixed-phase structures of monoclinic Ga{sub 2}O{sub 3} and bixbyite In{sub 2}O{sub 3}. The absolute average transmittance of the obtained films in the visible region exceeded 95%, and the band gap was in the range of 4.74-4.87 eV. Photoluminescence (PL) measurements were performed at room temperature, in which the visible luminescences were strong and could be seen by the naked eye. The strong emissions in the visible light region were proposed to originate from the gallium vacancies, oxygen deficiencies and other defects in these films. - Graphical abstract: Low magnification XTEM (a), HRTEM (b) and SAED (c) micrographs of the interface area between Ga{sub 1.82}In{sub 0.18}O{sub 3} film and MgO substrate have showed the Ga{sub 1.82}In{sub 0.18}O{sub 3} is an epitaxial film. Highlights: > Ga{sub 1.82}In{sub 0.18}O{sub 3} epitaxial film was deposited on MgO(1 0 0) substrate. > The transmittance of the Ga{sub 2}O{sub 3}:In films in the visible region exceeded 95%. > Strong emissions were observed in the photoluminescence measurements of the films.

  15. Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment

    SciTech Connect (OSTI)

    Ahmadi, Elaheh; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States); Chalabi, Hamidreza [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Kaun, Stephen W.; Shivaraman, Ravi; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2014-10-07

    The influence of alloy clustering on fluctuations in the ground state energy of the two-dimensional electron gas (2DEG) in AlGaN/GaN and InAlN/GaN heterostructures is studied. We show that because of these fluctuations, alloy clustering degrades the mobility even when the 2DEG wavefunction does not penetrate the alloy barrier unlike alloy disorder scattering. A comparison between the results obtained for AlGaN/GaN and InAlN/GaN heterostructures shows that alloy clustering limits the 2DEG mobility to a greater degree in InAlN/GaN heterostructures. Our study also reveals that the inclusion of an AlN interlayer increases the limiting mobility from alloy clustering. Moreover, Atom probe tomography is used to demonstrate the random nature of the fluctuations in the alloy composition.

  16. Proposed Curriculum in Spatial Sciences

    E-Print Network [OSTI]

    Proposed Curriculum in Spatial Sciences Catalog 14-15 University Core Curriculum Required Courses...............................................................................................................(3-2) 4 39 #12;Spatial Sciences Core Curriculum ESSM 444 Remote Sensing of the Environment

  17. University of California, San Diego Water Action Plan

    E-Print Network [OSTI]

    Gleeson, Joseph G.

    University of California, San Diego Water Action Plan December 20, 2013 #12;i Table of Contents of the Water Action Plan Water Action Plan Committee Regional Scope of the Water Action Plan HISTORICAL PROGRESS IN WATER REDUCTION.......................................................... 5 Campus Irrigation

  18. Within-Industry Technological Specialization, Collective Action, and Trade Policy 

    E-Print Network [OSTI]

    Urbanski, Piotr

    2015-01-21

    . I tie this with the logic of collective action and classical trade models to de- 6See Jones (2009). Also Wuchty et al. (2007); Jones et al. 2007. 6 rive an industry’s ability and intensity of lobbying over trade policy. The proposed theory helps us... has continued to de- velop. Arguably at an ever increasing rate. However, some industries have developed faster than others. At the same time some sectors of the American economy have lib- eralized more or less. Are the two trends related...

  19. Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

    SciTech Connect (OSTI)

    Schmidt, Gordon Müller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jürgen; Glauser, Marlene; Carlin, Jean-François; Cosendey, Gatien; Butté, Raphaël; Grandjean, Nicolas

    2014-07-21

    Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

  20. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

    SciTech Connect (OSTI)

    Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

    2010-01-15

    The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

  1. A comparison of the RCRA Corrective Action and CERCLA Remedial Action Processes

    SciTech Connect (OSTI)

    Traceski, Thomas T.

    1994-02-01

    This document provides a comprehensive side-by-side comparison of the RCRA corrective action and the CERCLA remedial action processes. On the even-numbered pages a discussion of the RCRA corrective action process is presented and on the odd-numbered pages a comparative discussion of the CERCLA remedial action process can be found. Because the two programs have a difference structure, there is not always a direct correlation between the two throughout the document. This document serves as an informative reference for Departmental and contractor personnel responsible for oversight or implementation of RCRA corrective action and CERCLA remedial action activities at DOE environmental restoration sites.

  2. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect (OSTI)

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  3. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-01

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

  4. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D. J.; Kurtz, Sarah R.; Kibbler, A. E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-15

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.

  5. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect (OSTI)

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  6. A hole modulator for InGaN/GaN light-emitting diodes Zi-Hui Zhang, Zabu Kyaw, Wei Liu, Yun Ji, Liancheng Wang, Swee Tiam Tan, Xiao Wei Sun, and Hilmi Volkan

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    well on optical power of light-emitting diodes Appl. Phys. Lett. 96, 051113 (2010); 10-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which

  7. Class Action Lawyers: Fools for Clients?

    E-Print Network [OSTI]

    Bergman, Paul

    1980-01-01

    Cir. 1976). 23. See Note, Class Actions-Susman v. Lincolntakes over a case from the class representative is act- ingan active and indepen- dent class representative throughout

  8. Nuclear facility decommissioning and site remedial actions

    SciTech Connect (OSTI)

    Knox, N.P.; Webb, J.R.; Ferguson, S.D.; Goins, L.F.; Owen, P.T.

    1990-09-01

    The 394 abstracted references on environmental restoration, nuclear facility decommissioning, uranium mill tailings management, and site remedial actions constitute the eleventh in a series of reports prepared annually for the US Department of Energy's Remedial Action Programs. Citations to foreign and domestic literature of all types -- technical reports, progress reports, journal articles, symposia proceedings, theses, books, patents, legislation, and research project descriptions -- have been included. The bibliography contains scientific, technical, economic, regulatory, and legal information pertinent to the US Department of Energy's Remedial Action Programs. Major sections are (1) Surplus Facilities Management Program, (2) Nuclear Facilities Decommissioning, (3) Formerly Utilized Sites Remedial Action Programs, (4) Facilities Contaminated with Naturally Occurring Radionuclides, (5) Uranium Mill Tailings Remedial Action Program, (6) Grand Junction Remedial Action Program, (7) Uranium Mill Tailings Management, (8) Technical Measurements Center, (9) Remedial Action Program, and (10) Environmental Restoration Program. Within these categories, references are arranged alphabetically by first author. Those references having no individual author are listed by corporate affiliation or by publication title. Indexes are provided for author, corporate affiliation, title word, publication description, geographic location, subject category, and keywords. This report is a product of the Remedial Action Program Information Center (RAPIC), which selects and analyzes information on remedial actions and relevant radioactive waste management technologies.

  9. Utilities Working with Industry: Action Plan

    SciTech Connect (OSTI)

    2010-06-25

    This action plan outlines joint ITP and utility activities that will help reach a national goal of reducing energy by 25 percent over then next 10 years.

  10. Calls to Action -- Linking Science to Design

    E-Print Network [OSTI]

    Fraker, Harrison

    2008-01-01

    the National Academy of Design, July 2008. Opposite: FlowAction Linking Science to Design Harrison Fraker Two recentthe fields of science and design. Entitled “Energy, Security

  11. Corrective Action Plan for Corrective Action Unit 262: Area 25 Septic Systems and Underground Discharge Point, Nevada Test Site, Nevada

    SciTech Connect (OSTI)

    K. B. Campbell

    2002-06-01

    This Corrective Action Plan (CAP) provides selected corrective action alternatives and proposes the closure methodology for Corrective Action Unit (CAU) 262, Area 25 Septic Systems and Underground Discharge Point. CAU 262 is identified in the Federal Facility Agreement and Consent Order (FFACO) of 1996. Remediation of CAU 262 is required under the FFACO. CAU 262 is located in Area 25 of the Nevada Test Site (NTS), approximately 100 kilometers (km) (62 miles [mi]) northwest of Las Vegas, Nevada. The nine Corrective Action Sites (CASs) within CAU 262 are located in the Nuclear Rocket Development Station complex. Individual CASs are located in the vicinity of the Reactor Maintenance, Assembly, and Disassembly (R-MAD); Engine Maintenance, Assembly, and Disassembly (E-MAD); and Test Cell C compounds. CAU 262 includes the following CASs as provided in the FFACO (1996); CAS 25-02-06, Underground Storage Tank; CAS 25-04-06, Septic Systems A and B; CAS 25-04-07, Septic System; CAS 25-05-03, Leachfield; CAS 25-05-05, Leachfield; CAS 25-05-06, Leachfield; CAS 25-05-08, Radioactive Leachfield; CAS 25-05-12, Leachfield; and CAS 25-51-01, Dry Well. Figures 2, 3, and 4 show the locations of the R-MAD, the E-MAD, and the Test Cell C CASs, respectively. The facilities within CAU 262 supported nuclear rocket reactor engine testing. Activities associated with the program were performed between 1958 and 1973. However, several other projects used the facilities after 1973. A significant quantity of radioactive and sanitary waste was produced during routine operations. Most of the radioactive waste was managed by disposal in the posted leachfields. Sanitary wastes were disposed in sanitary leachfields. Septic tanks, present at sanitary leachfields (i.e., CAS 25-02-06,2504-06 [Septic Systems A and B], 25-04-07, 25-05-05,25-05-12) allowed solids to settle out of suspension prior to entering the leachfield. Posted leachfields do not contain septic tanks. All CASs located in CAU 262 are inactive or abandoned. However, some leachfields may still receive liquids from runoff during storm events. Results from the 2000-2001 site characterization activities conducted by International Technology (IT) Corporation, Las Vegas Office are documented in the Corrective Action Investigation Report for Corrective Action Unit 262: Area 25 Septic Systems and Underground Discharge Point, Nevada Test Site, Nevada. This document is located in Appendix A of the Corrective Action Decision Document for CAU 262. Area 25 Septic Systems and Underground Discharge Point, Nevada Test Site, Nevada. (DOE/NV, 2001).

  12. Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

    SciTech Connect (OSTI)

    Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko; Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel; Garcia, Alipio

    2009-06-08

    We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

  13. Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets

    SciTech Connect (OSTI)

    Chu, Kuei-Yi; Chiang, Meng-Hsueh Cheng, Shiou-Ying; Liu, Wen-Chau

    2012-02-15

    Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

  14. Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Edmunds, C.; Malis, O.; Shao, J.; Shirazi-HD, M.; Manfra, M. J.

    2014-07-14

    We demonstrate THz intersubband absorption (15.6–26.1?meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14?meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a??40% reduction in the linewidth (from roughly 8 to 5?meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

  15. High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

    SciTech Connect (OSTI)

    Young, N. G. Farrell, R. M.; Iza, M.; Speck, J. S.; Perl, E. E.; Keller, S.; Bowers, J. E.; Nakamura, S.; DenBaars, S. P.

    2014-04-21

    We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

  16. Design of a GaAs/Ge solar array for unmanned aerial vehicles

    SciTech Connect (OSTI)

    Scheiman, D.A.; Colozza, A.J.; Brinker, D.J.; Bents, D.J.

    1994-12-31

    Unmanned Aerial Vehicles (UAV) are being proposed for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration airplane. Due to the weight, speed, and altitude constraints imposed on such aircraft, solar array generated electric power is a viable alternative to air-breathing engines. Development of such aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) is currently building a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office. Expected completion of the plane is early 1995, with the airplane currently undergoing flight testing using battery power.

  17. Design of a GaAs/Ge solar array for unmanned aerial vehicles

    SciTech Connect (OSTI)

    Scheiman, D.A.; Brinker, D.J.; Bents, D.J.; Colozza, A.J.

    1995-03-01

    Unmanned Aerial Vehicles (UAV) are being proposed for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration airplane. Due to the weight, speed, and altitude constraints imposed on such aircraft, solar array generated electric power is a viable alternative to air-breathing engines. Development of such aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) is currently building a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office. Expected completion of the plane is early 1995, with the airplane currently undergoing flight testing using battery power.

  18. InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

    SciTech Connect (OSTI)

    Alonso-Álvarez, D.; Thomas, T.; Führer, M.; Hylton, N. P.; Ekins-Daukes, N. J.; Lackner, D.; Philipps, S. P.; Bett, A. W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.

    2014-08-25

    Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1??s, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

  19. Removal Action Plan for the Accelerated Retrieval Project for a Described Area within Pit 4

    SciTech Connect (OSTI)

    A. M. Tyson

    2006-08-01

    This Removal Action Plan documents the plan for implementation of the Comprehensive Environmental Response, Compenstion, and Liability Act non-time-critical removal action to be performed by the Accelerated Retrieval Project. The focus of the action is the limited excavation and retrieval of selected waste streams from a designated portion of the Radioactive Waste Management Complex Subsurface Disposal Area that are contaminated with volatile organic compounds, isotopes of uranium, or transuranic radionuclides. The selected retrieval area is approximately 0.2 ha (1/2 acre) and is located in the eastern portion of Pit 4. The proposed project is referred to as the Accelerated Retrieval Project. This Removal Action Plan details the major work elements, operations approach, and schedule, and summarizes the environmental, safety and health, and waste management considerations associated with the project.

  20. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Mingda [University of Notre Dame, IN (United States); Song, Bo [Cornell University, Ithaca, NY (United States); Qi, Meng [University of Notre Dame, IN (United States); Hu, Zongyang [University of Notre Dame, IN (United States); Nomoto, Kazuki [University of Notre Dame, IN (United States); Yan, Xiaodong [University of Notre Dame, IN (United States); Cao, Yu [IQE, Westborough, MA (United States); Johnson, Wayne [IQE, Westborough, MA (United States); Kohn, Erhard [University of Notre Dame, IN (United States); Jena, Debdeep [Cornell University, Ithaca, NY (United States); Xing, Grace Huili [Cornell University, Ithaca, NY (United States)

    2015-04-01

    In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m?{center_dot}cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW{center_dot}cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

  1. Electrically pumped single-photon emission at room temperature from a single InGaN/GaN quantum dot

    SciTech Connect (OSTI)

    Deshpande, Saniya; Frost, Thomas; Hazari, Arnab; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109 (United States)

    2014-10-06

    We demonstrate a semiconductor quantum dot based electrically pumped single-photon source operating at room temperature. Single photons emitted in the red spectral range from single In{sub 0.4}Ga{sub 0.6}N/GaN quantum dots exhibit a second-order correlation value g{sup (2)}(0) of 0.29, and fast recombination lifetime ?1.3 ±0.3 ns at room temperature. The single-photon source can be driven at an excitation repetition rate of 200?MHz.

  2. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Mingda; Song, Bo; Qi, Meng; Hu, Zongyang; Nomoto, Kazuki; Yan, Xiaodong; Cao, Yu; Johnson, Wayne; Kohn, Erhard; Jena, Debdeep; et al

    2015-02-16

    In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m? · cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW·cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

  3. Cortical Action Representations Michael S. A. Graziano, Department of Psychology, Princeton University, Princeton NJ 08540

    E-Print Network [OSTI]

    Graziano, Michael

    proposed. In the homunculus hypothesis, the motor cortex is a map of muscles (Penfield and Rasmussen, 1950 combinations of muscles and body parts, the locations in space to which movements are directed, the broad distribution and overlap of properties. There is a tendency for different categories of action, such as hand-to-mouth

  4. Environmental assessment of remedial action at the Naturita Uranium processing site near Naturita, Colorado. Revision 1

    SciTech Connect (OSTI)

    Not Available

    1993-08-01

    The proposed remedial action for the Naturita processing site is relocation of the contaminated materials and debris to the Dry Flats disposal site, 6 road miles (mi) [ 1 0 kilometers (km)] to the southeast. At the disposal site, the contaminated materials would be stabilized and covered with layers of earth and rock. The proposed disposal site is on land administered by the Bureau of Land Management (BLM) and used primarily for livestock grazing. The final disposal site would cover approximately 57 ac (23 ha), which would be permanently transferred from the BLM to the DOE and restricted from future uses. The remedial action activities would be conducted by the DOE`s Uranium Mill Tailings Remedial Action (UMTRA) Project. The remedial action would result in the loss of approximately 164 ac (66 ha) of soils, but 132 ac (53 ha) of these soils are contaminated and cannot be used for other purposes. Another 154 ac (62 ha) of soils would be temporarily disturbed. Approximately 57 ac (23 ha) of open range land would be permanently removed from livestock grazing and wildlife use. The removal of the contaminated materials would affect the 1 00-year floodplain of the San Miguel River and would result in the loss of riparian habitat along the river. The southwestern willow flycatcher, a Federal candidate species, may be affected by the remedial action, and the use of water from the San Miguel River ``may affect`` the Colorado squawfish, humpback chub, bonytail chub, and razorback sucker. Traffic levels on State Highways 90 and 141 would be increased during the remedial action, as would the noise levels along these transportation routes. Measures for mitigating the adverse environmental impacts of the proposed remedial action are discussed in Section 6.0 of this environmental assessment (EA).

  5. Robotic actions in the human brain Robotic movement preferentially engages the action observation network

    E-Print Network [OSTI]

    Hamilton, Antonia

    Robotic actions in the human brain 1 Robotic movement., Stadler, W. & Prinz, W. (in press / 2011). Robotic movement preferentially engages the action observation network. Human Brain Mapping. #12;Robotic

  6. Graduate Honor System Actions 1999-2000 Case Dept. Charge GHS Action Sanction

    E-Print Network [OSTI]

    Butt, Ali R.

    Graduate Honor System Actions 1999-2000 Case Dept. Charge GHS Action Sanction F1999-01 ECp the Past Four Academic Years Case Outcomes Number of Students Sanctioned Sanction 1996-97 1997-98 1998

  7. Environmental Activism as Collective Action Key words: Environmental activism, environmental behavior, collective action,

    E-Print Network [OSTI]

    Lubell, Mark

    Environmental Activism as Collective Action Key words: Environmental activism, environmental behavior, collective action, environmentalism, collective interest model. Mark Lubell Department The literature on environmental activism has failed to produce a model of individual decision- making explicitly

  8. Rulison Site corrective action report

    SciTech Connect (OSTI)

    NONE

    1996-09-01

    Project Rulison was a joint US Atomic Energy Commission (AEC) and Austral Oil Company (Austral) experiment, conducted under the AEC`s Plowshare Program, to evaluate the feasibility of using a nuclear device to stimulate natural gas production in low-permeability gas-producing geologic formations. The experiment was conducted on September 10, 1969, and consisted of detonating a 40-kiloton nuclear device at a depth of 2,568 m below ground surface (BGS). This Corrective Action Report describes the cleanup of petroleum hydrocarbon- and heavy-metal-contaminated sediments from an old drilling effluent pond and characterization of the mud pits used during drilling of the R-EX well at the Rulison Site. The Rulison Site is located approximately 65 kilometers (40 miles) northeast of Grand Junction, Colorado. The effluent pond was used for the storage of drilling mud during drilling of the emplacement hole for the 1969 gas stimulation test conducted by the AEC. This report also describes the activities performed to determine whether contamination is present in mud pits used during the drilling of well R-EX, the gas production well drilled at the site to evaluate the effectiveness of the detonation in stimulating gas production. The investigation activities described in this report were conducted during the autumn of 1995, concurrent with the cleanup of the drilling effluent pond. This report describes the activities performed during the soil investigation and provides the analytical results for the samples collected during that investigation.

  9. Theory of weak localization in ferromagnetic (Ga,Mn)As 

    E-Print Network [OSTI]

    Garate, Ion; Sinova, Jairo; Jungwirth, T.; MacDonald, A. H.

    2009-01-01

    We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence-band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find that at Mn...

  10. Low-temperature magnetization of (Ga,Mn) As semiconductors 

    E-Print Network [OSTI]

    Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL.

    2006-01-01

    the semiphenomenological virtual crystal model the valence band holes experience a mean-field hMF =JpdNMn?S , and the band Hamiltonian can then be written as H? MF=H? KL?B?+hMFs?z, where H? KL?B? is the B-dependent six- band Kohn-Luttinger Hamiltonian of the GaAs host...

  11. Ohmic contacts for high-temperature GaP devices 

    E-Print Network [OSTI]

    Van der Hoeven, Willem Bernard

    1981-01-01

    in Table II, heat treatments have also been made by laser. One of the earliest papers that describe laser annealing to obtain ohmic contacts to GaP appeared in 1974 (20] . In this paper, Pounds, Saifi, and Hahm reported to have obtained ohmic contacts...

  12. High-quality InP on GaAs

    E-Print Network [OSTI]

    Quitoriano, Nathaniel Joseph

    2006-01-01

    In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

  13. Nanoscale GaAs metalsemiconductormetal photodetectors fabricated using nanoimprint lithography

    E-Print Network [OSTI]

    ­V) characteristics of the contacts are very sensi- tive to the surface states and defects. In this letter, we report mold with interdigited fin- gers was first created on a silicon substrate. Next, a layer of polymethylmethancrylate PMMA was spun on a semi- insulating SI GaAs substrate. Before imprinting, both the mold

  14. Properties of H, O and C in GaN

    SciTech Connect (OSTI)

    Pearton, S.J.; Abernathy, C.R.; Lee, J.W.

    1996-04-01

    The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

  15. Rapid microwave hydrothermal synthesis of ZnGa{sub 2}O{sub 4} with high photocatalytic activity toward aromatic compounds in air and dyes in liquid water

    SciTech Connect (OSTI)

    Sun Meng; Li Danzhen; Zhang Wenjuan; Chen Zhixin; Huang Hanjie; Li Wenjuan; He Yunhui; Fu Xianzhi

    2012-06-15

    ZnGa{sub 2}O{sub 4} was synthesized from Ga(NO{sub 3}){sub 3} and ZnCl{sub 2} via a rapid and facile microwave-assisted hydrothermal method. The photocatalytic properties of the as-prepared ZnGa{sub 2}O{sub 4} were evaluated by the degradation of pollutants in air and aqueous solution under ultraviolet (UV) light illumination. The results demonstrated that ZnGa{sub 2}O{sub 4} had exhibited efficient photocatalytic activities higher than that of commercial P25 (Degussa Co.) in the degradation of benzene, toluene, and ethylbenzene, respectively. In the liquid phase degradation of dyes (methyl orange, Rhodamine B, and methylene blue), ZnGa{sub 2}O{sub 4} has also exhibited remarkable activities higher than that of P25. After 32 min of UV light irradiation, the decomposition ratio of methyl orange (10 ppm, 150 mL) over ZnGa{sub 2}O{sub 4} (0.06 g) was up to 99%. The TOC tests revealed that the mineralization ratio of MO (10 ppm, 150 mL) was 88.1% after 90 min of reaction. A possible mechanism of the photocatalysis over ZnGa{sub 2}O{sub 4} was also proposed. - Graphical abstract: In the degradation of RhB under UV light irradiation, ZnGa{sub 2}O{sub 4} had exhibited efficient photo-activity, and after only 24 min of irradiation the decomposition ratio was up to 99.8%. Highlights: Black-Right-Pointing-Pointer A rapid and facile M-H method to synthesize ZnGa{sub 2}O{sub 4} photocatalyst. Black-Right-Pointing-Pointer The photocatalyst exhibits high activity toward benzene and dyes. Black-Right-Pointing-Pointer The catalyst possesses more surface hydroxyl sites than TiO{sub 2} (P25). Black-Right-Pointing-Pointer Deep oxidation of different aromatic compounds and dyes over catalyst.

  16. UC SAN DIEGO DROUGHT ACTION PLAN

    E-Print Network [OSTI]

    Gleeson, Joseph G.

    UC SAN DIEGO DROUGHT ACTION PLAN 2014 #12;Water at UC San Diego Background Report and Action Strategy for Drought The UC San Diego Campus The UC San Diego La Jolla campus (including Scripps Institution of Oceanography and the UC San Diego Medical Center ­ La Jolla) totals approximately 1,152 acres

  17. A Brief Look At Affirmative Action

    E-Print Network [OSTI]

    Erickson, Nancy Jo

    2007-12-06

    .........................................................................................13 Limitations of This Study ..........................................................................................14 History of Affirmative Action ...................................................................................15 Two Sides... of pertinent information due to the closed nature of the system being studied and the limited amount of information on this specific topic by anthropologists and the anthropological community. 14 History of Affirmative Action In its tumultuous 46-year...

  18. Chemical and Biological Engineering Summary of Actions

    E-Print Network [OSTI]

    Maxwell, Bruce D.

    Chemical and Biological Engineering Summary of Actions 2014-2015 Concern Recommendation Action Follow-up 1. The department name is Chemical and Biological Engineering. An analysis of student Biological Engineering programs. 4. The second semester of the senior capstone sequence in Chemical

  19. General Laws for the Action of Diastases

    E-Print Network [OSTI]

    V: Action of amylase on starch 68 §33. Method. H. Brown and Glendinning's research 68 §34. Law for the progress of the hydrolysis of starch by amylase 65 §35. Effect of the amount of starch. Difference between malt amylase and pancreatic juice amylase 68 §36. Theory of the law of action of amylase 72 §37

  20. Patent Issued Additional Office Actions Received

    E-Print Network [OSTI]

    Cui, Yan

    Patent Issued Additional Office Actions Received 3-12 mo. Respond to Office Action Patent attorney The patent examiner provides notification of which claims in the application have been rejected or accepted determines there are multiple inventions in 1 application. Patent Application Published 6 mo. Non

  1. Bishop's University Energy Efficiency Action Plan

    E-Print Network [OSTI]

    global energy consumption by 14% relative to 2002-2003. By 2010 Action 6: Cost evaluation of investments% reduction in energy consumption (GJ / m²) for higher education buildings from 2002-2003 until 2010- 2011 ways to save energy March 2008 Action 3: Snapshot of current energy consumption. Send energy

  2. CLIMATE ACTION PLAN NOVEMBER 10, 2009

    E-Print Network [OSTI]

    Suzuki, Masatsugu

    CLIMATE ACTION PLAN NOVEMBER 10, 2009 SANDY DEJOHN PHYSICAL FACILITIES DEPARTMENT #12;~ i ~ TABLE the American College and University Presidents Climate Commitment, I believe strongly in working to achieve its helped shape and develop the information contained in this Climate Action Plan: (Names listed

  3. TECHNICAL PROPOSAL Table of Contents

    E-Print Network [OSTI]

    ____________________________________________ 13 A.4.5 Energy Management ____________________________________________ 14 Related Work, the DSG has proposed building a test bed patient monitoring system in the Emergency Department monitoring system. The three main components of this system are (1) a patient­ based sensor system; (2

  4. TECHNICAL PROPOSAL Table of Contents

    E-Print Network [OSTI]

    ____________________________________________ 13 A.4.5 Energy Management ____________________________________________ 14 Related Work of Advanced Network Infrastructure Technology in Health and Disaster Management," the Decision Systems Group proposed building a test bed patient monitoring system in the Emergency Department at the Brigham and Women

  5. Grasers: proposals, problems, and prospects

    SciTech Connect (OSTI)

    Baldwin, G.C.

    1982-01-01

    The possibility and potentiality of amplification of recoilless radiation emitted by nuclear isomers has long been recognized; nevertheless, development of gamma-ray lasers continues to await resolution of the pumping vs. linebreadth dilemma. Problems that accompany proposals for reducing the excitation requirements and suggest areas of investigation that may contribute to resolving the dilemma are identified; several involve use of optical lasers.

  6. Climate Change Proposed Scoping Plan

    E-Print Network [OSTI]

    Climate Change Proposed Scoping Plan a amework for change Prepared by the California Air Resources #12;CLIMATE CHANGE SCOPING PLAN State of California Air Resources Board Resolution 08-47 December 11 greenhouse gas (GHG) emissions that cause global warming; WHEREAS, the adverse impacts of climate change

  7. Climate Change Proposed Scoping Plan

    E-Print Network [OSTI]

    Climate Change Proposed Scoping Plan a amework for change Prepared by the California Air ResourcesBackgroundBackgroundBackground ............................................................................................................................................................................................................................................................................................................................................................................................................ 4444 1. Climate Change Policy in California1. Climate Change Policy in California1. Climate Change Policy in California1. Climate Change Policy in California

  8. Proposals that work Barbara Crutchley

    E-Print Network [OSTI]

    Gosselin, Louis A.

    with lower ratings are often not discussed at the funding meeting: "The proposed program of research is generally consistent with the standards of the field but is not particularly innovative, or may Justification Be Reasonable! Don't overestimate your costs ­ a padded budget can easily irritate the reviewer

  9. Luminescence properties of defects in GaN

    SciTech Connect (OSTI)

    Reshchikov, Michael A.; Morkoc, Hadis [Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)

    2005-03-15

    Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects (vacancies, interstitial, and antisites), intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of other impurities, such as C, Si, H, O, Be, Mn, Cd, etc., on the luminescence properties of GaN are also reviewed. Further, atypical luminescence lines which are tentatively attributed to the surface and structural defects are discussed. The effect of surfaces and surface preparation, particularly wet and dry etching, exposure to UV light in vacuum or controlled gas ambient, annealing, and ion implantation on the characteristics of the defect-related emissions is described.

  10. Corrective Action Plan for Corrective Action Unit 424: Area 3 Landfill Complex, Tonopah Test Range, Nevada

    SciTech Connect (OSTI)

    Bechtel Nevada

    1998-08-31

    This corrective action plan provides the closure implementation methods for the Area 3 Landfill Complex, Corrective Action Unit (CAU) 424, located at the Tonopah Test Range. The Area 3 Landfill Complex consists of 8 landfill sites, each designated as a separate corrective action site.

  11. Testing a GaAs cathode in SRF gun

    SciTech Connect (OSTI)

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-03-28

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating gradient of the RF guns, potentially offering a long lived cathode with very low emittance. Testing this concept requires preparation of the cathode, transportation to the SRF gun and evaluation of the performance of the cathode and the gun at cryogenic temperatures. In our work at BNL, we successfully activated the bulk GaAs in the preparation chamber. The highest quantum efficient was 10% at 532 nm that fell to 0.5% after 100 hours. We explored three different ways to activate the GaAs. We verified that the GaAs photocathode remains stable for 30 hours in a 10{sup -11} Torr vacuum. Passing the photocathode through the low 10{sup -9} Torr transfer section in several seconds caused the QE to drop to 0.8%. The photocathode with 0.8% QE can be tested for the SRF gun. The gun and beam pipe were prepared and assembled. After baking at 200 C baking, the vacuum of the gun and beam pipe can sustain a low 10{sup -11} Torr at room temperature. The final test to extract electrons from the gun is ongoing. In this paper, we discuss our progress with this SRF gun and the results of the photocathode in preparation chamber and in magnet transfer line.

  12. Quaternary InGaAsSb Thermophotovoltaic Diodes

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  13. Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes

    SciTech Connect (OSTI)

    Zhou, Kun; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Liu, Jianping, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Zhang, Shuming; Li, Deyao; Zhang, Liqun; Yang, Hui [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Cai, Jin; Wang, Hui; Wang, H. B. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Suzhou Nanojoin Photonics Co., Ltd., Suzhou (China)

    2014-10-27

    The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3?nm–6?nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200?A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelength we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.

  14. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.

    SciTech Connect (OSTI)

    Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

    2012-03-01

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

  15. Thesis Proposal Guidelines for the Molecular Genetics and Genomics Program Timing of the Thesis Proposal (or Pre-Proposal)

    E-Print Network [OSTI]

    Gereau, Robert W. IV

    Thesis Proposal Guidelines for the Molecular Genetics and Genomics Program Timing of the Thesis Proposal (or Pre-Proposal) NEW: Students are encouraged to present a thesis proposal as soon as possible the thesis proposal by December 31 of their second year). If a student anticipates that he or she

  16. Nonlinear Terahertz Metamaterials via Field-Enhanced Carrier Dynamics in GaAs

    E-Print Network [OSTI]

    Fan, Kebin

    We demonstrate nonlinear metamaterial split ring resonators (SRRs) on GaAs at terahertz frequencies. For SRRs on doped GaAs films, incident terahertz radiation with peak fields of ?20–160??kV/cm drives intervalley scattering. ...

  17. Device-level thermal analysis of GaN-based electronics

    E-Print Network [OSTI]

    Bagnall, Kevin Robert

    2013-01-01

    Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

  18. Light extraction in individual GaN nanowires on Si for LEDs

    E-Print Network [OSTI]

    Zhou, Xiang

    GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

  19. Inves&ga&ng the Trade-Off between Luminous Efficacy of Radia&on

    E-Print Network [OSTI]

    California at Davis, University of

    Inves&ga&ng the Trade-Off between Luminous Efficacy of Radia&on and Color, Canada · Lorne Whitehead, Canada #12;Inves&ga&ng the Trade-Off between Luminous

  20. Characterization of NIR InGaAs imager arrays for the JDEM SNAP mission concept

    E-Print Network [OSTI]

    2006-01-01

    Characterization of NIR InGaAs imager arrays for the JDEMapplications. Keywords: NIR, InGaAs, astronomy, low-1.7um band Near Infrared (NIR) focal plane mosaic with high

  1. Atomic structure of postgrowth annealed epitaxial Fe/(001)GaAs interfaces

    E-Print Network [OSTI]

    LeBeau, James; Hu, Qi O.; Palmstrom, Christopher; Stemmer, Susanne

    2008-01-01

    line pro?le across the interface along the line indicated inHAADF images of the GaAs/Fe interface along ?a? ?11 0? GaAsindicates the location of an interface step. Arrows in ?b?

  2. Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Bia?ek, M. Witowski, A. M.; Grynberg, M.; ?usakowski, J.; Orlita, M.; Potemski, M.; Czapkiewicz, M.; Umansky, V.

    2014-06-07

    In order to characterize magnetic field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the magnetoplasmon resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.

  3. High 400?°C operation temperature blue spectrum concentration solar junction in GaInN/GaN

    SciTech Connect (OSTI)

    Zhao, Liang; Detchprohm, Theeradetch; Wetzel, Christian

    2014-12-15

    Transparent wide gap junctions suitable as high temperature, high flux topping cells have been achieved in GaInN/GaN by metal-organic vapor phase epitaxy. In structures of 25 quantum wells (QWs) under AM1.5G illumination, an open circuit voltage of 2.1?V is achieved. Of the photons absorbed in the limited spectral range of <450?nm, 64.2% are converted to electrons collected at the contacts under zero bias. At a fill factor of 45%, they account for a power conversion efficiency of38.6%. Under concentration, the maximum output power density per sun increases from 0.49?mW/cm{sup 2} to 0.51?mW/cm{sup 2} at 40?suns and then falls 0.42?mW/cm{sup 2} at 150?suns. Under external heating, a maximum of 0.59?mW/cm{sup 2} is reached at 250?°C. Even at 400?°C, the device is fully operational and exceeds room temperature performance. A defect analysis suggests that significantly higher fill factors and extension into longer wavelength ranges are possible with further development. The results prove GaInN/GaN QW solar junctions a viable and rugged topping cell for concentrator photovoltaics with minimal cooling requirements. By capturing the short range spectrum, they reduce the thermal load to any conventional cells stacked behind.

  4. Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1

    E-Print Network [OSTI]

    quantum wells (QW)s,1) and InAs quantum dots at 1.3 mm2) have brought about the commercialization of Ga differential quantum efficiency, T-zero and far field as a function of stripe width. # 2009 The Japan Society offer a number of advantages over their InP counterparts, namely the use of larger substrates (>3 in

  5. Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Lin, Jie; Llopis, Antonio; Krokhin, Arkadii; Neogi, Arup, E-mail: arup@unt.edu [Department of Physics, University of North Texas, Denton, Texas 76203 (United States); Pereira, Sergio [CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Watson, Ian M. [SUPA, Institute of Photonics, University of Strathclyde, Glasgow (United Kingdom)

    2014-06-16

    The light enhancement phenomena in InGaN/GaN multi-quantum wells (MQWs) infiltrated with metal nanoparticles (NPs) are studied using resonant and off-resonant localized plasmon interactions. The emission and recombination characteristics of carriers in InGaN/GaN MQW structures with inverted hexagonal pits (IHPs) are modified distinctly depending on the nature of their interaction with the metal NPs and with the pumping and emitted photons. It is observed that the emission intensity of light is significantly enhanced when the emission energy is off-resonant to the localized plasmon frequency of the metal nanoparticles. This results in enhanced emission from MQW due to Au nanoparticles and from IHPs due to Ag nanoparticles. At resonant-plasmon frequency of the Ag NPs, the emission from MQWs is quenched due to the re-absorption of the emitted photons, or due to the drift carriers from c-plane MQWs towards the NPs because of the Coulomb forces induced by the image charge effect.

  6. Portsmouth Proposed Plan for the Process Buildings and Complex Facilities Decontamination and Decommissioning Evaluation Project

    Broader source: Energy.gov [DOE]

    DOE has evaluated alternatives for demolishing the buildings at the Portsmouth Site. Two remedial alternatives were developed for consideration. This Proposed Plan describes the required no-action alternative (Alternative 1) and a D&D alternative (Alternative 2). The preferred alternative is Alternative 2, controlled demolition of the process buildings and complex facilities.

  7. Molecular Dynamics Simulation of GaAs Molecular Beam Epitaxy D. A. Murdick,1

    E-Print Network [OSTI]

    Wadley, Haydn

    of Virginia, Charlottesville, Virginia 22904, USA 2 Department of Materials, University of Oxford, Oxford OX1 3PH, UK ABSTRACT The vapor deposition of epitaxial GaAs and (Ga,Mn)As thin films during far-temperature growth of Ga0.94Mn0.06As and the Mn clustering trends in as-grown films. INTRODUCTION GaAs is widely used

  8. GaN Initiative for Grid Applications (GIGA)

    SciTech Connect (OSTI)

    Turner, George

    2015-07-03

    For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 ?m, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and vertical devices were explored, with the conclusion that lateral devices are superior for fundamental thermal reasons, as well as for the demonstration of future generations of monolithic power circuits. As part of the materials and device investigations breakdown mechanisms in GaN-on-Si structures were fully characterized and effective electric field engineering was recognized as critical for achieving even higher voltage operation. Improved device contact technology was demonstrated, including the first gold-free metallizations (to enable processing in CMOS foundries) while maintaining low specific contact resistance needed for high-power operation and 5-order-of magnitude improvement in device leakage currents (essential for high power operation). In addition, initial GaN-on-Si epitaxial growth was performed on 8”/200 mm Si starting substrates.

  9. DISSERTATION ANTICIPATED PERFORMANCE OF Cu(In,Ga)Se2 SOLAR CELLS IN THE

    E-Print Network [OSTI]

    Sites, James R.

    i DISSERTATION ANTICIPATED PERFORMANCE OF Cu(In,Ga)Se2 SOLAR CELLS IN THE THIN-FILM LIMIT Submitted ENTITLED `ANTICIPATED PERFORMANCE OF Cu(In,Ga)Se2 SOLAR CELLS IN THE THIN-FILM LIMIT' BE ACCEPTED(In,Ga)Se2 SOLAR CELLS IN THE THIN-FILM LIMIT The demand for alternative sources of energy is rapidly

  10. TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron

    E-Print Network [OSTI]

    neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

  11. Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a

    E-Print Network [OSTI]

    Okamoto, Koichi

    is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

  12. Near perfect solar absorption in ultra-thin-film GaAs photonic crystals

    E-Print Network [OSTI]

    John, Sajeev

    Near perfect solar absorption in ultra-thin-film GaAs photonic crystals Sergey Eyderman,*a Alexei voltage of GaAs solar cells. The current world record for high efficiency solar cells is held by thin ultra-thin (GaAs in low-cost solar cells. However, this reduction in the volume

  13. ORIGINAL ARTICLE Highly efficient GaAs solar cells by limiting light emission

    E-Print Network [OSTI]

    Polman, Albert

    a non-concentrating system with limited emission angle in a thin, light trapping GaAs solar cellORIGINAL ARTICLE Highly efficient GaAs solar cells by limiting light emission angle Emily D Kosten1 of a high-quality GaAs solar cell is a feasible route to achieving power conversion efficiencies above 38

  14. Inversion of wurtzite GaN(0001) by exposure to V. Ramachandran and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    in the growth rate of GaN on different crystallographic planes [8], pointing to a surfactant effect of Mg on Ga in these films and the carrier concentration was therefore very low [1,2]; dopant activa- tion can be achieved of Mg at GaN growth temperatures is an issue and dopant in- corporation may be rather inefficient [5

  15. Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    SciTech Connect (OSTI)

    Cheng, Junjie; Li, Jiadong; Miao, Bin; Wu, Dongmin; Wang, Jine; Pei, Renjun; Wu, Zhengyan

    2014-08-25

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup ?14} to 10{sup ?8} M and a detection limit below 10{sup ?14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

  16. Action principle for Coulomb collisions in plasmas

    E-Print Network [OSTI]

    Hirvijoki, Eero

    2015-01-01

    In this letter we derive an action principle for Coulomb collisions in plasmas. Although no natural Lagrangian exists for the Landau-Fokker-Planck equation, an Eulerian variational formulation is found considering the system of partial differential equations that couple the distribution function and the Rosenbluth potentials. Exact conservation laws are derived after generalizing the energy-momentum stress tensor for second order Lagrangians and, in the case of a test-particle population in a given plasma background, the action principle is shown to correspond to the Langevin equation for individual particles. Being suitable for discretization, the presented action allows construction of variational integrators. Numerical implementation is left for a future study.

  17. On QCD Thermodynamics with Improved Actions

    E-Print Network [OSTI]

    Karsch, Frithjof

    1998-01-01

    We discuss recent advances in the calculation of thermodynamic observables using improved actions. In particular, we discuss the calculation of the equation of state of the SU(3) gauge theory, the critical temperature in units of the string tension, the surface tension and the latent heat at the deconfinement transition. We also present first results from a calculation of the equation of state for four-flavour QCD using an O(a^2) improved staggered fermion action and discuss possible further improvements of the staggered fermion action.

  18. Enforcement actions: Significant actions resolved. Volume 14, No. 2, Part 1: Individual actions. Quarterly progress report, April--June 1995

    SciTech Connect (OSTI)

    NONE

    1995-09-01

    This compilation summarizes significant enforcement actions that have been resolved during one quarterly period (April--June 1995) and includes copies of Orders sent by the Nuclear Regulatory Commission to individuals with respect to these enforcement actions. It is anticipated that the information in this publication will be widely disseminated to managers and employees engaged in activities licensed by the NRC. The Commission believes this information may be useful to licensees in making employment decisions.

  19. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992

    SciTech Connect (OSTI)

    Venkatasubramanian, R.

    1993-01-01

    This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The ``cycled`` organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al{sub 0.34}Ga{sub 0.66}As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  20. EIS-0030-S: Bonneville Power Administration Proposed FY 1980 Program, Facility Location Supplement, Northwest Montana/North Idaho Support and Libby Integration, Supplemental

    Broader source: Energy.gov [DOE]

    The Bonneville Power Administration developed this supplemental statement to evaluate the environmental impacts of proposed alternative actions to alternative actions intended to address the need for reliability of electrical service to loads in Northwest Montana and North Idaho and the need for integrating the generation being added at Libby Dam into the Federal Columbia River Power System.

  1. 2014 INCITE Call for Proposals - Due

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    INCITE Call for Proposals 2014 INCITE Call for Proposals - Due June 28 April 30, 2013 by Francesca Verdier (0 Comments) The 2014 INCITE Call for Proposals is now open. Open to...

  2. Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

    SciTech Connect (OSTI)

    Sundaram, S.; El Gmili, Y.; Bonanno, P. L. [CNRS, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Puybaret, R.; Li, X.; Voss, P. L.; Ougazzaden, A. [Georgia Institute of Technology, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Pantzas, K.; Patriarche, G. [CNRS, UPR LPN, Route de Nozay, 91460 Marcoussis (France); Orsal, G.; Salvestrini, J. P., E-mail: salvestr@metz.supelec.fr [Université de Lorraine, Supélec, LMOPS, EA4423, 57070 Metz (France); Troadec, D. [Université des Sciences et Technologies de Lille, CNRS, UMR 8520 IEMN, 59000 Lille (France); Cai, Z.-H. [Advanced Photon Source, 9700 S. Cass Avenue, Argonne, Illinois 60439 (United States)

    2014-10-28

    Uniform, dense, single-phase, 150?nm thick indium gallium nitride (InGaN) nanostructure (nanorods and nanostripes) arrays have been obtained on gallium nitride templates, by metal organic chemical vapor deposition and nanoscale selective area growth on silicon dioxide patterned masks. The 150?nm thick InGaN nanorods have a perfect hexagonal pyramid shape with relatively homogenous indium concentration up to 22%, which is almost twice as high as in planar InGaN grown in the same condition, and luminesce at 535?nm. InGaN nanostripes feature c-axis oriented InGaN in the core which is covered by InGaN grown along semi-polar facets with higher In content. Transmission electron microscope and sub micron beam X-rays diffraction investigations confirm that both InGaN nanostructures are mostly defect free and monocrystalline. The ability to grow defect-free thick InGaN nanostructures with reduced polarization and high indium incorporation offers a solution to develop high efficiency InGaN-based solar cells.

  3. Method of plasma etching GA-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2013-01-01

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

  4. Method of plasma etching Ga-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  5. AlGaAs-On-Insulator Nonlinear Photonics

    E-Print Network [OSTI]

    Pu, Minhao; Semenova, Elizaveta; Yvind, Kresten

    2015-01-01

    The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement. Efficient nonlinear photonic chips have myriad applications including high speed optical signal processing, on-chip multi-wavelength lasers, metrology, molecular spectroscopy, and quantum information science. Aluminium gallium arsenide (AlGaAs) exhibits very high material nonlinearity and low nonlinear loss when operated below half its bandgap energy. However, difficulties in device processing and low device effective nonlinearity made Kerr frequency comb generation elusive. Here, we demonstrate AlGaAs-on-insulator as a nonlinear platform at telecom wavelengths. Using newly developed fabrication processes, we show high-quality-factor (Q>100,000) micro-resonators with integrated bus waveguides in a planar circuit where optical parametric oscillation is achieved with a record low threshold power of 3 mW and a frequency comb spanning 350 nm i...

  6. Formation and properties of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Lockwood, D.J.; Fraser, J.W.; Graham, M.J.; Isaacs, H.S.

    1996-06-01

    Porous structures on n-type GaAs (100) can be grown electrochemically in chloride-containing solutions. Crystallographic etching of the sample is a precursor stage of the attack. Polarization curves reveal the existanece of a critical onset potential for por formation (PFP). PFP is strongly dependent on the doping level of the sample and presence of surface defects. Good agreement between PFP and breakdown voltage of the space charge layer is found. Surface analysis by EDX, AES, and XPS show that the porous structure consists mainly of GaAs and that anion uptake in the structure can only observed after attackhas been initiated. Photoluminescence measurements reveal (under certain conditions) visible light emission from the porous structure.

  7. Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    to be further improved in order for the high- power LEDs to penetrate into the consumer market of gen- eral to higher optical output power and external quantum efficiency, compared to the devices with p-AlGaN EBLGaN/GaN based light-emitting diodes (LEDs) possess unique advantages including high energy conversion effi

  8. Implementation of an Innovative Bio Inspired GA and PSO Algorithm for Controller design considering Steam GT Dynamics

    E-Print Network [OSTI]

    Shivakumar, R

    2010-01-01

    The Application of Bio Inspired Algorithms to complicated Power System Stability Problems has recently attracted the researchers in the field of Artificial Intelligence. Low frequency oscillations after a disturbance in a Power system, if not sufficiently damped, can drive the system unstable. This paper provides a systematic procedure to damp the low frequency oscillations based on Bio Inspired Genetic (GA) and Particle Swarm Optimization (PSO) algorithms. The proposed controller design is based on formulating a System Damping ratio enhancement based Optimization criterion to compute the optimal controller parameters for better stability. The Novel and contrasting feature of this work is the mathematical modeling and simulation of the Synchronous generator model including the Steam Governor Turbine (GT) dynamics. To show the robustness of the proposed controller, Non linear Time domain simulations have been carried out under various system operating conditions. Also, a detailed Comparative study has been don...

  9. DIVERSITY ACTION PLAN CIVIL & ENVIRONMENTAL ENGINEERING

    E-Print Network [OSTI]

    DIVERSITY ACTION PLAN CIVIL & ENVIRONMENTAL ENGINEERING GRADUATE STUDENT REPORT PREPARED FOR: Civil & Environmental Engineering College of Engineering University of Washington Seattle, Washington of Engineering strategic goals, this report provides Civil and Environmental Engineering (CEE) with detailed

  10. DIVERSITY ACTION PLAN CIVIL & ENVIRONMENTAL ENGINEERING

    E-Print Network [OSTI]

    DIVERSITY ACTION PLAN CIVIL & ENVIRONMENTAL ENGINEERING UNDERGRADUATE STUDENT REPORT PREPARED FOR: Civil & Environmental Engineering College of Engineering University of Washington Seattle, Washington in Civil and Environmental Engineering (CEE). The purpose of the report is to facilitate the department

  11. Science Maps in Action Dr. Katy Brner

    E-Print Network [OSTI]

    Menczer, Filippo

    Science Maps in Action Dr. Katy Börner Cyberinfrastructure for Network Science Center, Director Information Visualization Laboratory, Director School of Library and Information Science Indiana University Computational Scientometrics: Studying Science by Scientific Means Börner, Katy, Chen, Chaomei, and Boyack

  12. ARM - Propose a Field Campaign

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory of rare Kaonforsupernovae2GatheringARMHistorygovCampaignsPropose a Campaign

  13. Technical Proposal Disclosure Policy - ITER

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking With U.S. Coal StocksSuppliersmillion coreChallenges inProposal

  14. The transputer based GA. SP data acquisition system

    SciTech Connect (OSTI)

    Colombo, D.; Avano, B.; DePoli, M.; Maron, G. ); Negro, A.; Parlati, G. )

    1992-04-01

    In this paper, the new data acquisition for the GA.SP detector is presented. It is a distributed system based on a network of 40 T800 and T222 transputers linked to a VME system used for histogram storage. A 100 MBit/s FDDI ring connects the system to UNIX workstations used for the experiment control, histogram display and second level data analysis.

  15. Minority-carrier properties of GaAs on silicon

    SciTech Connect (OSTI)

    Ahrenkiel, R.K.; Al-Jassim, M.M.; Dunlavy, D.J.; Jones, K.M.; Vernon, S.M.; Tobin, S.P.; Haven, V.E.

    1988-07-18

    The minority-carrier lifetimes of the heteroepitaxial system of GaAs on Si are limited by recombination at mismatch dislocations. Here we show that increasing the thickness of the buffer layer, with an additional annealing step, reduces the dislocation density by about an order of magnitude. At the same time, the minority-carrier lifetime in these double heterostructures increases more than an order of magnitude.

  16. Ohmic contacts to p-type Ga

    E-Print Network [OSTI]

    Jorge Estevez, Humberto Angel

    1996-01-01

    resistivity was achieved by developing the Si(750A)/Pd(400A)/Zn(xA)/Pd(IOOA)/p-GaP scheme. Values of the contact resistivity in the range of 3xlO-5 to 7xlO-' nCM2 were obtained. It was found that the optimum Zn layer thickness is 30 A for the Pd and Si...

  17. Conductivity based on selective etch for GaN devices and applications thereof

    DOE Patents [OSTI]

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  18. On the Effective Action of N=1 Supersymmetric Yang-Mills Theory

    E-Print Network [OSTI]

    G. R. Farrar; G. Gabadadze; M. Schwetz

    1997-12-22

    We propose a generalization of the Veneziano-Yankielowicz effective low-energy action for N=1 SUSY Yang-Mills theory which includes composite operators interpolating pure gluonic bound states. The chiral supermultiplet of anomalies is embedded in a larger three-form multiplet and an extra term in the effective action is introduced. The mass spectrum and mixing of the lowest-spin bound states are studied within the effective Lagrangian approach. The physical mass eigenstates form two multiplets, each containing a scalar, pseudoscalar and Weyl fermion. The multiplet containing the states which are most closely related to glueballs is the lighter one.

  19. CONFIGURATION CHANGE PROPOSAL FORM | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    CONFIGURATION CHANGE PROPOSAL FORM CONFIGURATION CHANGE PROPOSAL FORM This form is used for sharing information on Domain Name Server (DNS) changes, new requirements, modifications...

  20. The Question of Conation in Action Theory

    E-Print Network [OSTI]

    Good, Robert

    The Question of Conation in Action Theory Robert Good Rider College In some recent and most interesting articles, Myles Brand argues that intending has an exclusively conative feature. 1 This conative feature is said by Brand to be non... of a conative component of intending is best understood in light of the recent history of Causal theories of action. Basciaily, a Causal theory is one which holds that intentional ac­ tion is caused by a preceding mental event of a partic­ ular kind...

  1. Improved lattice fermion action for heavy quarks

    E-Print Network [OSTI]

    Cho, Yong-Gwi; Jüttner, Andreas; Kaneko, Takashi; Marinkovic, Marina; Noaki, Jun-Ichi; Tsang, Justus Tobias

    2015-01-01

    We develop an improved lattice action for heavy quarks based on Brillouin-type fermions, that have excellent energy-momentum dispersion relation. The leading discretization errors of $O(a)$ and $O(a^2)$ are eliminated at tree-level. We carry out a scaling study of this improved Brillouin fermion action on quenched lattices by calculating the charmonium energy-momentum dispersion relation and hyperfine splitting. We present a comparison to standard Wilson fermions and domain-wall fermions.

  2. Improved lattice fermion action for heavy quarks

    E-Print Network [OSTI]

    Yong-Gwi Cho; Shoji Hashimoto; Andreas Jüttner; Takashi Kaneko; Marina Marinkovic; Jun-Ichi Noaki; Justus Tobias Tsang

    2015-05-28

    We develop an improved lattice action for heavy quarks based on Brillouin-type fermions, that have excellent energy-momentum dispersion relation. The leading discretization errors of $O(a)$ and $O(a^2)$ are eliminated at tree-level. We carry out a scaling study of this improved Brillouin fermion action on quenched lattices by calculating the charmonium energy-momentum dispersion relation and hyperfine splitting. We present a comparison to standard Wilson fermions and domain-wall fermions.

  3. Continued development of metallization for GaAs concentrator cells

    SciTech Connect (OSTI)

    Tobin, S.P.

    1988-11-01

    The objective of this work was the integration of thermally stable metallizations with a high-efficiency GaAs concentrator cell process. For p-GaAs we used a Pt-TiN-Au metallization developed under a previous Sandia Contract. For n-GaAs the best results were obtained for AuGe-TiN-Au. Baseline p/n cells with a CrAu metallization achieved efficiencies of 25.4% at 200 suns. Efficiencies were about 22% at one sun. At one sun, p/n cells with high-temperature contacts were 22.2% efficient, showing that there is no efficiency penalty with the high-temperature metallization. Development efforts on n/p cells yielded high short-circuit currents and open-circuit voltages, with both conventional and high-temperature metallizations. Thermal annealing tests showed that cells with the Pt-TiN-Au metallization were more stable than those with the baseline metallization, withstanding a 15-minute anneal at 500/degree/C with negligible efficiency degradation. 22 refs., 64 figs., 54 tabs.

  4. InGaAsSb thermophotovoltaic diode physics evaluation

    SciTech Connect (OSTI)

    Charache, G.W.; Baldasaro, P.F.; Danielson, L.R. [Lockheed-Martin, Inc., Schenectady, NY (United States)] [and others

    1998-06-01

    The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1,000 C, which sets an upper limit on the TPV diode bandgap of 0.6 eV from efficiency and power density considerations. This bandgap requirement has necessitated the development of new diode material systems, never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice-matched on GaSb substrates have achieved the highest performance. This report relates observed diode performance to electro-optic properties such as minority carrier lifetime, diffusion length and mobility and provides initial links to microstructural properties. This analysis has bounded potential diode performance improvements. For the 0.52 eV InGaAsSb diodes used in this analysis the measured dark current is 2 {times} 10{sup {minus}5} A/cm{sup 2}, versus a potential Auger limit 1 {times} 10{sup {minus}5} A/cm{sup 2}, a radiative limit of 2 {times} 10{sup {minus}6} A/cm{sup 2} (no photon recycling), and an absolute thermodynamic limit of 1.4 {times} 10{sup {minus}7} A/cm{sup 2}. These dark currents are equivalent to open circuit voltage gains of 20 mV (7%), 60 mV (20%) and 140 mV (45%), respectively.

  5. Ga lithography in sputtered niobium for superconductive micro and nanowires

    SciTech Connect (OSTI)

    Henry, M. David; Wolfley, Steve; Monson, Todd; Lewis, Rupert

    2014-08-18

    This work demonstrates the use of focused ion beam (FIB) implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12?nm deep with a 14?nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10??m by 10??m and 100??m by 100??m, demonstrate that doses above than 7.5?×?10{sup 15?}cm{sup ?2} at 30?kV provide adequate mask protection for a 205?nm thick, sputtered Nb film. The resolution of this dry lithographic technique is demonstrated by fabrication of nanowires 75?nm wide by 10??m long connected to 50??m wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature (T{sub c})?=?7.7?K was measured using a magnetic properties measurement system. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.

  6. Tonopah Test Range Summary of Corrective Action Units

    SciTech Connect (OSTI)

    Ronald B. Jackson

    2007-05-01

    Corrective Action Sites (CASs) and Corrective Action Units (CAUs) at the Tonopah Test Range (TTR) may be placed into three categories: Clean Closure/No Further Action, Closure in Place, or Closure in Progress.

  7. Safety assessment for proposed pump mixing operations to mitigate episodic gas releases in tank 241-101-SY: Hanford Site, Richland, Washington

    SciTech Connect (OSTI)

    Lentsch, J.W., Westinghouse Hanford

    1996-05-16

    This safety assessment addresses each of the elements required for the proposed action to remove a slurry distributor and to install, operate, and remove a mixing pump in Tank 241-SY-101, which is located within the Hanford Site, Richland, Washington. The proposed action is required as part of an ongoing evaluation of various mitigation concepts developed to eliminate episodic gas releases that result in hydrogen concentrations in the tank dome space that exceed the lower flammability limit.

  8. A safety assessment for proposed pump mixing operations to mitigate episodic gas releases in tank 241-SY-101: Hanford Site,Richland, Washington

    SciTech Connect (OSTI)

    Lentsch, J.W.

    1996-07-01

    This safety assessment addresses each of the elements required for the proposed action to remove a slurry distributor and to install, operate, and remove a mixing pump in Tank 241-SY-101,which is located within the Hanford Site, Richland, Washington.The proposed action is required as part of an ongoing evaluation of various mitigation concepts developed to eliminate episodic gas releases that result in hydrogen concentrations in the tank dome space that exceed the lower flammability limit.

  9. Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga2Se3/Si(001)

    SciTech Connect (OSTI)

    Yitamben, E.N.; Arena, D.; Lovejoy, T.C.; Pakhomov, A.B.; Heald, S.M.; Negusse, E.; Ohuchi, F.S.; Olmstead, M.A.

    2011-01-28

    Chromium-doped gallium sesquiselenide, Cr:Ga{sub 2}Se{sub 3}, is a member of a new class of dilute magnetic semiconductors exploiting intrinsic vacancies in the host material. The correlation among room-temperature ferromagnetism, surface morphology, electronic structure, chromium concentration, and local chemical and structural environments in Cr:Ga{sub 2}Se{sub 3} films grown epitaxially on silicon is investigated with magnetometry, scanning tunneling microscopy, photoemission spectroscopy, and x-ray absorption spectroscopy. Inclusion of a few percent chromium in Ga{sub 2}Se{sub 3} results in laminar, semiconducting films that are ferromagnetic at room temperature with a magnetic moment 4{micro}{sub B}/Cr. The intrinsic-vacancy structure of defected-zinc-blende {beta}-Ga{sub 2}Se{sub 3} enables Cr incorporation in a locally octahedral site without disrupting long-range order, determined by x-ray absorption spectroscopy, as well as strong overlap between Cr 3d states and the Se 4p states lining the intrinsic-vacancy rows, observed with photoemission. The highest magnetic moment per Cr is observed near the solubility limit of roughly one Cr per three vacancies. At higher Cr concentrations, islanded, metallic films result, with a magnetic moment that depends strongly on surface morphology. The effective valence is Cr{sup 3+} in laminar films, with introduction of Cr{sup 0} upon islanding. A mechanism is proposed for laminar films whereby ordered intrinsic vacancies mediate ferromagnetism.

  10. Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates

    SciTech Connect (OSTI)

    Bengoechea-Encabo, A.; Albert, S.; Barbagini, F.; Sanchez-Garcia, M. A.; Calleja, E. [ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n 28040 Madrid (Spain)] [ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n 28040 Madrid (Spain); Zuñiga-Perez, J.; Mierry, P. de [CRHEA-CNRS, 06560 Valbonne (France)] [CRHEA-CNRS, 06560 Valbonne (France); Trampert, A. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)] [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2013-12-09

    The aim of this work is the selective area growth (SAG) of GaN nanocolumns, with and without an InGaN insertion, by molecular beam epitaxyon semi-polar (11–22) GaN templates. The high density of stacking faults present in the template is strongly reduced after SAG. A dominant sharp photoluminescence emission at 3.473 eV points to high quality strain-free material. When embedding an InGaN insertion into the ordered GaN nanostructures, very homogeneous optical properties are observed, with two emissions originating from different regions of each nanostructure, most likely related to different In contents on different crystallographic planes.

  11. Nuclear facility decommissioning and site remedial actions

    SciTech Connect (OSTI)

    Owen, P.T.; Knox, N.P.; Ferguson, S.D.; Fielden, J.M.; Schumann, P.L.

    1989-09-01

    The 576 abstracted references on nuclear facility decommissioning, uranium mill tailings management, and site remedial actions constitute the tenth in a series of reports prepared annually for the US Department of Energy's Remedial Action Programs. Citations to foreign and domestic literature of all types--technical reports, progress reports, journal articles, symposia proceedings, theses, books, patents, legislation, and research project descriptions--have been included. The bibliography contains scientific, technical, economic, regulatory, and legal information pertinent to the US Department of Energy's Remedial Action Programs. Major sections are (1) Surplus Facilities Management Program, (2) Nuclear Facilities Decommissioning, (3) Formerly Utilized Sites Remedial Action Program, (4) Facilities Contaminated with Naturally Occurring Radionuclides, (5) Uranium Mill Tailings Remedial Action Program, (6) Uranium Mill Tailings Management, (7) Technical Measurements Center, and (8) General Remedial Action Program Studies. Within these categories, references are arranged alphabetically by first author. Those references having no individual author are listed by corporate affiliation or by publication description. Indexes are provided for author, corporate affiliation, title work, publication description, geographic location, subject category, and keywords.

  12. Gallium hole traps in irradiated KTiOPO{sub 4}:Ga crystals

    SciTech Connect (OSTI)

    Grachev, V.; Meyer, M.; Malovichko, G.; Hunt, A. W.

    2014-12-07

    Nominally pure and gallium doped single crystals of potassium titanyl phosphate (KTiOPO{sub 4}) have been studied by Electron Paramagnetic Resonance at low temperatures before and after irradiation. Irradiation with 20?MeV electrons performed at room temperature and liquid nitrogen temperature caused an appearance of electrons and holes. Gallium impurities act as hole traps in KTiOPO{sub 4} creating Ga{sup 4+} centers. Two different Ga{sup 4+} centers were observed, Ga1 and Ga2. The Ga1 centers are dominant in Ga-doped samples. For the Ga1 center, a superhyperfine structure with one nucleus with nuclear spin ½ was registered and attributed to the interaction of gallium electrons with a phosphorus nucleus or proton in its surrounding. In both Ga1 and Ga2 centers, Ga{sup 4+} ions substitute for Ti{sup 4+} ions, but with a preference to one of two electrically distinct crystallographic positions (site selective substitution). The Ga doping eliminates one of the shortcomings of KTP crystals—ionic conductivity of bulk crystals. However, this does not improve significantly the resistance of the crystals to electron and ?-radiation.

  13. Efficiency calculations of thin-film GaAs solar cells on Si substrates

    SciTech Connect (OSTI)

    Yamaguchi, M.; Amano, C.

    1985-11-01

    Dislocation effect upon the efficiency of single-crystal thin-film AlGaAs-GaAs heteroface solar cells on Si substrates is analyzed. Solar-cell properties are calculated based on a simple model; in the model, dislocations act as recombination centers to reduce the minority-carrier diffusion length in each layer and increase the space-charge layer recombination current. Numerical analysis is also carried out to optimize thin-film AlGaAs-GaAs heteroface solar-cell structures. The fabrication of thin-film AlGaAs-GaAs heteroface solar cells with a practical efficiency larger than 18% on Si substrates appears possible if the dislocation density in the thin-film GaAs layer is less than 10/sup 6/ cm/sup -2/.

  14. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

    SciTech Connect (OSTI)

    Young, Erin C.; Wu Feng; Haeger, Daniel A.; Nakamura, Shuji; Denbaars, Steven P.; Cohen, Daniel A.; Speck, James S.; Romanov, Alexey E.

    2012-10-01

    In this Letter, we report on the growth and properties of relaxed, compositionally graded Al{sub x}Ga{sub 1-x}N buffer layers on freestanding semipolar (2021) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10{sup 6}/cm{sup 2} as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

  15. Electron heating due to microwave photoexcitation in the high mobility GaAs/AlGaAs two dimensional electron system

    SciTech Connect (OSTI)

    Ramanayaka, A. N.; Mani, R. G.; Wegscheider, W.

    2013-12-04

    We extract the electron temperature in the microwave photo-excited high mobility GaAs/AlGaAs two dimensional electron system (2DES) by studying the influence of microwave radiation on the amplitude of Shubnikov-de Haas oscillations (SdHOs) in a regime where the cyclotron frequency, ?{sub c}, and the microwave angular frequency, ?, satisfy 2? ? ?{sub c} ? 3.5? The results indicate that increasing the incident microwave power has a weak effect on the amplitude of the SdHOs and therefore the electron temperature, in comparison to the influence of modest temperature changes on the dark-specimen SdH effect. The results indicate negligible electron heating under modest microwave photo-excitation, in good agreement with theoretical predictions.

  16. Origin of radiative recombination and manifestations of localization effects in GaAs/GaNAs core/shell nanowires

    SciTech Connect (OSTI)

    Chen, S. L.; Filippov, S.; Chen, W. M.; Buyanova, I. A.; Ishikawa, Fumitaro

    2014-12-22

    Radiative carrier recombination processes in GaAs/GaNAs core/shell nanowires grown by molecular beam epitaxy on a Si substrate are systematically investigated by employing micro-photoluminescence (?-PL) and ?-PL excitation (?-PLE) measurements complemented by time-resolved PL spectroscopy. At low temperatures, alloy disorder is found to cause localization of photo-excited carriers leading to predominance of optical transitions from localized excitons (LE). Some of the local fluctuations in N composition are suggested to lead to strongly localized three-dimensional confining potential equivalent to that for quantum dots, based on the observation of sharp and discrete PL lines within the LE contour. The localization effects are found to have minor influence on PL spectra at room temperature due to thermal activation of the localized excitons to extended states. Under these conditions, photo-excited carrier lifetime is found to be governed by non-radiative recombination via surface states which is somewhat suppressed upon N incorporation.

  17. Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces

    SciTech Connect (OSTI)

    Li, Huijie E-mail: sh-yyang@semi.ac.cn; Zhao, Guijuan; Liu, Guipeng; Wei, Hongyuan; Jiao, Chunmei; Yang, Shaoyan E-mail: sh-yyang@semi.ac.cn; Wang, Lianshan; Zhu, Qinsheng

    2014-05-21

    One dimensional electron gas (1DEG) arrays in vicinal GaN/AlGaN heterostructures have been studied. The steps at the interface would lead to the lateral barriers and limit the electron movement perpendicular to such steps. Through a self-consistent Schrödinger-Poisson approach, the electron energy levels and wave functions were calculated. It was found that when the total electron density was increased, the lateral barriers were lowered due to the screening effects by the electrons, and the electron gas became more two-dimension like. The calculated 1DEG densities were compared to the experimental values and good agreements were found. Moreover, we found that a higher doping density is more beneficial to form 1-D like electron gas arrays.

  18. Terrestrial Concentrator PV Modules Based on GaInP/GaAs/Ge TJ Cells and Minilens Panels

    SciTech Connect (OSTI)

    Rumyantsev, V. D.; Sadchikov, N. A.; Chalov, A. E.; Ionova, E. A.; Friedman, D. J.; Glenn, G.

    2006-01-01

    This paper is a description of research activity in the field of cost-effective modules realizing the concept of very high solar concentration with small-aperture area Fresnel lenses and multijunction III-V cells. Structural simplicity and 'all-glass' design are the guiding principles of the corresponding development. The advanced concentrator modules are made with silicone Fresnel lens panels (from 8 up to 144 lenses, each lens is 4 times 4 cm{sup 2} in aperture area) with composite structure. GaInP/GaAs/Ge triple-junction cells with average efficiencies of 31.1 and 34.7% at 1000 suns were used for the modules. Conversion efficiency as high as 26.3% has been measured indoors in a test module using a newly developed large-area solar simulator.

  19. Enforcement actions: Significant actions resolved material licensees. Semiannual progress report, July--December 1996

    SciTech Connect (OSTI)

    1997-04-01

    This compilation summarizes significant enforcement actions that have been resolved during the period and includes copies of letters, Notices, and Orders sent by the Nuclear Regulatory Commission to material licensees with respect to these enforcement actions. It is anticipated that the information in this publication will be widely disseminated to managers and employees engaged in activities licensed by the NRC, so that actions can be taken to improve safety by avoiding future violations similar to those described in this publication.

  20. Enforcement actions: Significant actions resolved; Quarterly progress report, October--December 1993: Volume 12, No. 4

    SciTech Connect (OSTI)

    NONE

    1994-03-01

    This compilation summarizes significant enforcement actions that have been resolved during one quarterly period (October - December 1993) and includes copies of letters, Notices, and Orders sent by the Nuclear Regulatory Commission to licensees with respect to these enforcement actions. It is anticipated that the information in this publication will be widely disseminated to managers and employees engaged in activities licensed by the NRC, so that actions can be taken to improve safety by avoiding future violations similar to those described in this publication.

  1. The healthy cell bias of estrogen action: mitochondrial bioenergetics

    E-Print Network [OSTI]

    Brinton, Roberta Diaz

    The healthy cell bias of estrogen action: mitochondrial bioenergetics and neurological implications action' hypothesis examines the role that regulating mitochondrial function and bioenergetics play

  2. Energy Action Month October 2014 Campaign Materials | Department...

    Energy Savers [EERE]

    Month October 2014 Campaign Materials Energy Action Month October 2014 Campaign Materials Campaign materials for "Transition to a Clean Energy Reality," the theme for Energy Action...

  3. State Opportunities for Action: Update of States' CHP Activities...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Opportunities for Action: Update of States' CHP Activities (ACEEE), October 2003 State Opportunities for Action: Update of States' CHP Activities (ACEEE), October 2003 This 2003...

  4. Tonopah Test Range Environmental Restoration Corrective Action Sites

    SciTech Connect (OSTI)

    NSTec Environmental Restoration

    2010-08-04

    This report describes the status (closed, closed in place, or closure in progress) of the Corrective Action Sites and Corrective Action Units at the Tonopah Test Range

  5. Water Action Plan 2 UNIVERSITY OF CALIFORNIA, IRVINE

    E-Print Network [OSTI]

    Rose, Michael R.

    UC Irvine Water Action Plan 2013 #12;2 UNIVERSITY OF CALIFORNIA, IRVINE #12;WATER ACTION PLAN TABLE...........................................11 WATER USE.......................................................................13 MAIN..........................................14 RECYCLED WATER...........................................................14 STORMWATER

  6. United States and Japan Sign Joint Nuclear Energy Action Plan...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Japan Sign Joint Nuclear Energy Action Plan to Promote Nuclear Energy Cooperation United States and Japan Sign Joint Nuclear Energy Action Plan to Promote Nuclear Energy...

  7. Energy Department Actions to Deploy Combined Heat and Power,...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Actions to Deploy Combined Heat and Power, Boost Industrial Efficiency Energy Department Actions to Deploy Combined Heat and Power, Boost Industrial Efficiency October 21, 2013 -...

  8. North American Energy Ministers Take Further Action on Energy...

    Office of Environmental Management (EM)

    North American Energy Ministers Take Further Action on Energy Security and the Environment North American Energy Ministers Take Further Action on Energy Security and the...

  9. Minneapolis and Saint Paul, Minnesota: Solar in Action (Brochure...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Minneapolis and Saint Paul, Minnesota: Solar in Action (Brochure), Solar...

  10. San Francisco, California: Solar in Action (Brochure), Solar...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) San Francisco, California: Solar in Action (Brochure), Solar America Cities,...

  11. 2012 National Energy Assurance Planning Conference After-Action...

    Energy Savers [EERE]

    2012 National Energy Assurance Planning Conference After-Action Report (August 2012) 2012 National Energy Assurance Planning Conference After-Action Report (August 2012) On June...

  12. Energy Literacy in Action: Nevada Teachers Helping Students Learn...

    Office of Environmental Management (EM)

    Energy Literacy in Action: Nevada Teachers Helping Students Learn About Energy Energy Literacy in Action: Nevada Teachers Helping Students Learn About Energy November 6, 2014 -...

  13. Final Week of National Energy Action Month Features Technological...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Week of National Energy Action Month Features Technological Advances in Clean Energy and DOE Support of Scientific Research Final Week of National Energy Action Month Features...

  14. Implement an Institutional Change Action Plan for Sustainability...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Implement an Institutional Change Action Plan for Sustainability Implement an Institutional Change Action Plan for Sustainability Graphic showing 5 gears. They progress from...

  15. Develop an Institutional Change Action Plan for Sustainability...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Develop an Institutional Change Action Plan for Sustainability Develop an Institutional Change Action Plan for Sustainability Graphic showing 5 gears. They progress from Determine...

  16. Overview of the State and Local Energy Efficiency Action Network

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Overview of the State and Local Energy Efficiency Action Network Johanna Zetterberg Coordinator, SEE Action Network US Department of Energy Achieving the Potential * EE remains one...

  17. Portland, Oregon: Solar in Action (Brochure), Solar America Cities...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Portland, Oregon: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Portland, Oregon: Solar in Action (Brochure), Solar America Cities,...

  18. San Antonio, Texas: Solar in Action (Brochure), Solar America...

    Energy Savers [EERE]

    San Antonio, Texas: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) San Antonio, Texas: Solar in Action (Brochure), Solar America...

  19. Consensus Action Items from CHP Roadmap Process, June 2001 |...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Consensus Action Items from CHP Roadmap Process, June 2001 Consensus Action Items from CHP Roadmap Process, June 2001 This paper discusses three main objectives in the CHP...

  20. Corrective Action Tracking System User's Guide | Department of...

    Broader source: Energy.gov (indexed) [DOE]

    September 07, 2004 Corrective Action Tracking System (CATS) User's Guide for Direct Web Access The Department of Energy (DOE) Corrective Action Management Program (CAMP) prescribes...