Sample records for ga proposed action

  1. Categorical Exclusion Determination Form Proposed Action Title...

    Broader source: Energy.gov (indexed) [DOE]

    CountyState): TVN Systems, Inc. (Lawrence, KS); Vanderbilt University (Nashville, TN); University of Kansas (Lawrence, KS) Proposed Action Description: Funding will support...

  2. Categorical Exclusion Determination Form Proposed Action Title...

    Broader source: Energy.gov (indexed) [DOE]

    LocationCs) CCityCountyState): Bosch RTC (Palo Alto, CA); Cobasys, LLC (Orion, MI); University of California - San Diego (San Diego, CA) Proposed Action Description: Funding...

  3. Categorical Exclusion Determination Form Proposed Action Title...

    Broader source: Energy.gov (indexed) [DOE]

    Research Projects Agency - Energy LocationCs) CCityCountyState): Niskayuna, NY; Ann Arbor, MI; Dearborn, MI Proposed Action Description: Funding will support efforts to...

  4. Categorical Exclusion (CX) Determination Proposed Action: Elliot...

    Broader source: Energy.gov (indexed) [DOE]

    Elliot 115kV43.8kV Transmission Substation Construction and Elliot 43.8kV Transmission Line. Description of Proposed Action: The Central Power Electric Cooperative (Central Power)...

  5. N Springs expedited response action proposal

    SciTech Connect (OSTI)

    Not Available

    1994-01-01T23:59:59.000Z

    Since signing the Hanford Federal Facility Agreement and Consent Order (Tri-Party Agreement) in 1989, the parties to the agreement have recognized the need to modify the approach to conducting investigations, studies, and cleanup actions at Hanford. To implement this approach, the parties have jointly developed the Hanford Past-Practice Strategy. The strategy defines a non-time-critical expedited response action (ERA) as a response action ``needed to abate a threat to human health or welfare or the environment where sufficient time exists for formal planning prior to initiation of response. In accordance with the past-practice strategy, DOE proposes to conduct an ERA at the N Springs, located in the Hanford 100 N Area, to substantially reduce the strontium-90 transport into the river through the groundwater pathway. The purpose of this ERA proposal is to provide sufficient information to select a preferred alternative at N Springs. The nature of an ERA requires that alternatives developed for the ERA be field ready; therefore, all the technologies proposed for the ERA should be capable of addressing the circumstances at N Springs. A comparison of these alternatives is made based on protectiveness, cost, technical feasibility, and institutional considerations to arrive at a preferred alternative. Following the selection of an alternative, a design phase will be conducted; the design phase will include a detailed look at design parameters, performance specifications, and costs of the selected alternative. Testing will be conducted as required to generate design data.

  6. Implementation Proposal for the National Action Plan on Demand...

    Broader source: Energy.gov (indexed) [DOE]

    and the Department of Energy. Implementation Proposal for the National Action Plan on Demand Response - July 2011 More Documents & Publications National Action Plan on Demand...

  7. White Bluffs Pickling Acid Cribs expedited response action proposal

    SciTech Connect (OSTI)

    Not Available

    1993-07-01T23:59:59.000Z

    The US Environmental Protection Agency (EPA) and Washington State Department of Ecology (Ecology) recommended in a letter dated March 4, 1992 (Attachment 1) that the US Department of Energy (DOE) prepare an expedited response action (ERA) for the White Bluffs Pickling Acid Cribs Site. The lead regulatory agency for this ERA is the EPA, with Ecology providing support. The goal of this ERA is to reduce the potential of any residual contaminant migration from the cribs to the soil column and groundwater. The cribs are the only waste site within the 100-IU-5 operable unit. Since the operable unit is surrounded by other waste units, tracing the potential groundwater contamination from the 100-IU-5 operable unit for this ERA would not be effective. Groundwater will be investigated with the 100-IU-2 operable unit. This ERA proposal presents the characterization data from the site investigations conducted in November of 1992. This information is evaluated to present the best method for reducing potential of contaminant migration from the disposal unit, ensuring both protection of human health and the environment. The ERA proposal will undergo a public review. EPA and Ecology will issue an Action Agreement Memorandum after comment resolution. This Action Memorandum may authorize implementation of the ERA proposal`s recommended alternative. The ERA may also provide a No Further Action Interim Record of Decision (IROD) of the 100-IU-5 operable unit.

  8. Property:NEPA Proposed Action | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag Jump to: navigation,ProjectStartDateProperty Edit with formProposed Action Jump to:

  9. Expedited response action proposal for 316-5 process trenches

    SciTech Connect (OSTI)

    Not Available

    1991-07-01T23:59:59.000Z

    A summary of the evaluation of remedial alternatives for the 300 Area Process Trench sediment removal at Hanford is presented. Based on the preliminary technology screening, screening factors, and selection criteria the preferred alternative for the 300 Area Process Trench is to remove and interim stabilize the sediments within the fenced area of the process trenches. This alternative involves proven technologies that are applied easily at this mixed waste site. This alternative removes and isolates contaminated sediments from the active portion of the trenches allowing continued used of the trenches until an inspection and treatment facility is constructed. The alternative does not incorporate any materials or actions that preclude consideration of a technology for final remediation of the operable unit. The estimated initial and annual costs would enable this alternative to be implemented under the guidelines for an EPA- funded ERA ($2 million). Implementation of the alternative can be accomplished with trained personnel using familiar procedures to provide a safe operation that accomplishes the objective for removing a potential source of contamination, thereby reducing potential environmental threat to groundwater. 18 refs., 5 figs., 9 tabs.

  10. RCRA corrective action permit requirements and modifications under proposed Subpart S rule. RCRA Information Brief

    SciTech Connect (OSTI)

    Coalgate, J.

    1993-07-01T23:59:59.000Z

    Corrective action is required under the authority of the Resource Conservation and Recovery Act (RCRA) Sections 3004(u) and(v) which were added by the Hazardous and Solid Waste Amendments of 1984 (HSWA). In response to HSWA, the US Environmental Protection Agency(EPA) proposed a comprehensive corrective action program under 40 CFR 264 Subpart S [55 FR 30798, July 27, 1990]. Although Subpart S is still only proposed, it is being implemented by the EPA Regions until the rule is finalized. Proposed Subpart S corrective action applies to releases to any media from any solid waste management unit (SWMU) at a treatment, storage, or disposal facility (TSDF). Corrective action requirements under proposed Subpart S are imposed through permit conditions or, for interim status facilities, through a RCRA Section 3008(h) order. In general, upon initial regulation of a TSDF, the owner or operator submits a Part A permit application, notifying the regulatory agency of waste management activities. The Part A consists of a form containing general information about the facility, the unit(s) affected, and the wastes managed in the units. Part B of the permit application provides detailed information on the facility, the units affected, and the waste managed. The Part B permit application may consist of several volumes of information. Proposed Subpart S requirements, would be contained in the Part B permit application. The Part B permit application proposes requirements and conditions intended to respond to the various RCRA requirements for permitted units. This submittal initiates the negotiation process for regulated SWMUS, whereby the requirements and conditions for unit operation are established. The term of the permit is typically 5 or 10 years, after which a permit renewal or issuance of a new permit is required. This Information Brief provides information on the permit requirements and process under proposed Subpart S.

  11. Operable Unit 3: Proposed Plan/Environmental Assessment for interim remedial action

    SciTech Connect (OSTI)

    Not Available

    1993-12-01T23:59:59.000Z

    This document presents a Proposed Plan and an Environmental Assessment for an interim remedial action to be undertaken by the US Department of Energy (DOE) within Operable Unit 3 (OU3) at the Fernald Environmental Management Project (FEMP). This proposed plan provides site background information, describes the remedial alternatives being considered, presents a comparative evaluation of the alternatives and a rationnale for the identification of DOE`s preferred alternative, evaluates the potential environmental and public health effects associated with the alternatives, and outlines the public`s role in helping DOE and the EPA to make the final decision on a remedy.

  12. Interim Action Proposed Plan for the old radioactive waste burial ground (643-E)

    SciTech Connect (OSTI)

    McFalls, S.

    1995-12-01T23:59:59.000Z

    This Interim Action Proposed (IAPP) is issued by the U.S. Department of Energy (DOE), which functions as the lead agency for SRS remedial activities, and with concurrence by the U.S. Environmental Protection Agency (EPA) and the South Carolina Department of Health and Environmental Control (SCDHEC). The purpose of this IAPP is to describe the preferred interim remedial action for addressing the Old Radioactive Waste Burial Ground (ORWBG) unit located in the Burial Ground Complex (BGC) at the Savannah River Site (SRS) in Aiken, South Carolina. On December 21, 1989, SRS was included on the National Priorities List (NPL). In accordance with Section 120 of the Comprehensive Environmental Response, Compensation, and Liability Act (CERCLA), DOE has negotiated a Federal Facility Agreement (FFA, 1993) with EPA and SCDHEC to coordinate remedial activities at SRS. Public participation requirements are listed in Sections 113 and 117 of CERCLA. These requirements include establishment of an Administrative Record File that documents the selection of remedial alternatives and allows for review and comment by the public regarding those alternatives. The SRS Public Involvement Plan (PIP) (DOE, 1994) is designed to facilitate public involvement in the decision-making process for permitting closure, and the selection of remedial alternatives. Section 117(a) of CERCLA, 1980, as amended, requires publication of a notice of any proposed remedial action.

  13. DOE and FERC Jointly Submit Implementation Proposal for The National Action Plan on Demand Response to Congress

    Broader source: Energy.gov [DOE]

    The U.S. Department of Energy and the Federal Energy Regulatory Commission (FERC) jointly submitted to Congress a required “Implementation Proposal for The National Action Plan on Demand Response.”

  14. A Proposal for Research With the Goal of Formulating a Computational Theory of Rational Action

    E-Print Network [OSTI]

    Batali, John

    A theory of rational action can be used to determine the right action to perform in a situation. I will develop a theory of rational action in which an agent has access to an explicit theory of rationality. The agent makes ...

  15. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N- GaN built-in junctions in the n-GaN layer for InGaN/GaN: N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN

  16. SB 4 Interim Well Stimulation Treatment Regulations Notice of Proposed Emergency Rulemaking Action

    E-Print Network [OSTI]

    . DIVISION OF OIL, GAS, AND GEOTHERMAL RESOURCES Notice Published December 11, 2013 NOTICE IS HEREBY GIVEN of Oil, Gas and Geothermal Resources to conduct well stimulation treatment. The permit application must RULEMAKING ACTION REGARDING TITLE 14. NATURAL RESOURCES DIVISION 2. DEPARTMENT OF CONSERVATION CHAPTER 4

  17. Review and analysis of proposed EPA groundwater standards for the UMTRA Project. [Uranium Mill Tailings Remedial Action (UMTRA) Project

    SciTech Connect (OSTI)

    Not Available

    1987-10-01T23:59:59.000Z

    The Title I groundwater standards for inactive uranium mill tailings sites, which were promulgated on January 5, 1983, by the US Environmental Protection Agency (EPA) for the Uranium Mill Tailings Remedial Action (UMTRA) Project, were remanded to the EPA on September 3, 1985, by the US Tenth Circuit Court of Appeals. The Court instructed the EPA to compile general groundwater standards for all sites. On September 24, 1987, the EPA published proposed standards in response to the remand. This Summary Report includes an evaluation of the potential effects of the proposed EPA groundwater standards on the UMTRA Project as well as a discussion of the DOE's position on the proposed standards. This report is accompanied by a detailed Technical Report and Appendices which provide supporting information and analyses. This Summary Report results from a study undertaken to: determine the impact of the proposed standards on the UMTRA Project; and recommend provisions for the implementation of the final standards that will minimize adverse impact to the conduct of the UMTRA Project while ensuring protection of human health and the environment. Specifically, the following were considered: the flexibility of the proposed standards; interpretations of the proposed standards; the extent of aquifer restoration that may be required to implement the proposed standards at each site; the costs of aquifer restoration; and design changes necessary to meet the standards.

  18. Proposed Action Title: U.S. Department of Energy Southwestern Power Administration

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible forPortsmouth/Paducah47,193.70 HgPromising MagnesiumDOE/Richland Operations OfficeAction

  19. US Department of Energy response to standards for remedial actions at inactive uranium processing sites: Proposed rule

    SciTech Connect (OSTI)

    Not Available

    1988-01-29T23:59:59.000Z

    The Title I groundwater standards for inactive uranium mill tailings sites, which were promulgated on January 5, 1983, by the US Environmental Protection Agency (EPA) for the Uranium Mill Tailings Remedial Action (UMTRA) Project, were remanded to the EPA on September 3, 1985, by the US Tenth Circuit Court of Appeals. The Court instructed the EPA to compile general groundwater standards for all Title I sites. On September 24, 1987, the EPA published proposed standards (52FR36000-36008) in response to the remand. This report includes an evaluation of the potential effects of the proposed EPA groundwater standards on the UMTRA Project, as well as a discussion of the DOE's position on the proposed standards. The report also contains and appendix which provides supporting information and cost analyses. In order to assess the impacts of the proposed EPA standards, this report summarizes the proposed EPA standards in Section 2.0. The next three sections assess the impacts of the three parts of the EPA standards: Subpart A considers disposal sites; Subpart B is concerned with restoration at processing sites; and Subpart C addresses supplemental standards. Section 6.0 integrates previous sections into a recommendations section. Section 7.0 contains the DOE response to questions posed by the EPA in the preamble to the proposed standards. 6 refs., 5 figs., 3 tabs.

  20. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer

  1. US Department of Energy final response to standards for remedial actions at inactive uranium processing sites; Proposed rule

    SciTech Connect (OSTI)

    Not Available

    1988-11-14T23:59:59.000Z

    This document revisits and supplements information and recommendations presented in the January 1988 US Department of Energy (DOE) submission to the US Environmental Protection Agency (EPA) regarding the proposed standards for Title I uranium processing sites (DOE, 1988). The clarifications and comments in this report are based on further DOE investigation, contemplation, and interpretation of the proposed standards. Since the January response, the DOE has undertaken a number of special studies to -investigate, evaluate, focus, and clarify issues relating to the standards. In addition, the Nuclear Regulatory Commission (NRC) has issued a draft technical position outlining its interpretation of the proposed standards and clarifying how the standards will be implemented (NRC, 1988). Some issues presented are based on previous positions, and the original DOE position is restated for reference. Other issues or recommendations are more recent than the January DOE response; therefore, no former position was advanced. The order of presentation reflects the general order of significance to the DOE, specifically in regards to the Uranium Mill Tailings Remedial Action (UMTRA) Project.

  2. Description of Proposed Action

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisitingContract Management FermiDavid Turner David3Depth Profile RECORD OF

  3. Environmental Assessment - Proposed Actions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power AdministrationField8, 2000ConsumptionInnovationEnvironment,682 Environmental

  4. Proposal for a second-generation, lattice matched, multiple junction Ga{sub 2}AsSb TPV converter

    SciTech Connect (OSTI)

    Horner, G.S. [Keithley Instruments, Solon Ohio (United States); Coutts, T.J.; Wanlass, M.W. [National Renewable Energy Laboratory, Golden Colorado (United States)

    1995-01-05T23:59:59.000Z

    First order device modeling is used to show that spontaneously ordered Ga{sub 2}AsSb may prove useful in the newly-active field of thermophotovoltaic power generation. Optimal band gaps for single-, double- and triple-junction III-V devices are presented for a range of blackbody emitter temperatures (1000--2000 K), and it is shown that monolithic, current-matched devices may be constructed that are lattice-matched throughout the stack to an underlying InP substrate. Device efficiency, short-circuit current, fill factor, and open-circuit voltage calculations are presented. The power generation capabilities are expected to be substantial due to the proximity of the devices to the thermal radiators. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.

  5. UMTRA Project remedial action planning and disposal cell design to comply with the proposed EPA (Environmental Protection Agency) standards (40 CFR Part 192)

    SciTech Connect (OSTI)

    Not Available

    1989-01-01T23:59:59.000Z

    The Uranium Mill Tailings Remedial Action (UMTRA) Project involves stabilizing 24 inactive uranium mill tailings piles in 10 states. Remedial work must meet standards established by the US Environmental Protection Agency (EPA). Remedial action must be designed and constructed to prevent dispersion of the tailings and other contaminated materials, and must prevent the inadvertent use of the tailings by man. This report is prepared primarily for distribution to parties involved in the UMTRA Project, including the US Nuclear Regulatory Commission (NRC), and states and tribes. It is intended to record the work done by the DOE since publication of the proposed EPA groundwater protection standards, and to show how the DOE has attempted to respond and react in a positive way to the new requirements that result from the proposed standards. This report discusses the groundwater compliance strategies now being defined and implemented by the DOE, and details the changes in disposal cell designs that result from studies to evaluate ways to facilitate compliance with the proposed EPA groundwater protection standards. This report also serves to record the technical advances, planning, and progress made on the UMTRA Project since the appearance of the proposed EPA groundwater protection standards. The report serves to establish, document, and disseminate technical approaches and engineering and groundwater information to people who may be interested or involved in similar or related projects. 24 refs., 27 figs., 8 tabs.

  6. Proposed plan for remedial action for the Groundwater Operable Unit at the Chemical Plant Area of the Weldon Spring Site, Weldon Spring, Missouri

    SciTech Connect (OSTI)

    NONE

    1999-08-10T23:59:59.000Z

    This Proposed Plan addresses the remediation of groundwater contamination at the chemical plant area of the Weldon Spring site in Weldon Spring, Missouri. The site is located approximately 48 km (30 mi) west of St. Louis in St. Charles County . Remedial activities at the site will be conducted in accordance with the Comprehensive Environmental Response, Compensation, and Liability Act (CERCLA). The U.S. Department of Energy (DOE), in conjunction with the U.S. Department of the Army (DA), conducted a joint remedial investigation/feasibility study (RI/FS) to allow for a comprehensive evaluation of groundwater conditions at the Weldon Spring chemical plant area and the Weldon Spring ordnance works area, which is an Army site adjacent to the chemical plant area. Consistent with DOE policy, National Environmental Policy Act (NEPA) values have been incorporated into the CERCLA process. That is, the analysis conducted and presented in the RVFS reports included an evaluation of environmental impacts that is comparable to that performed under NEPA. This Proposed Plan summarizes information about chemical plant area groundwater that is presented in the following documents: (1) The Remedial Investigation (RI), which presents information on the nature and extent of contamination; (2) The Baseline Risk Assessment (BRA), which evaluates impacts to human health and the environment that could occur if no cleanup action of the groundwater were taken (DOE and DA 1997a); and (3) The Feasibility Study (FS) and the Supplemental FS, which develop and evaluate remedial action alternatives for groundwater remediation.

  7. GaAs/InGaP/AlGaAs quantum-well infrared photodetectors

    SciTech Connect (OSTI)

    Keshagupta, P.; Radpour, F. [Univ. of Cincinnati, OH (United States)

    1994-12-31T23:59:59.000Z

    In this paper, a new quantum-well infrared photodetector (QWIP) based on bound-to-miniband transitions in a GaAs/InGaP quantum well with GaAs/AlGaAs short superlattice barriers is presented and compared with the conventional GaAs/InGaP QWIPs. Results of the theoretical calculations of the detector parameters and the preliminary fabrication results of an embedded-well to miniband (EWTMB) GaAs/InGaP/AlGaAs quantum well/superlattice detector are presented. The advantages of the proposed design include improvement of the material quality, ability to adjust the peak wavelength in 8--12 {micro}m range, and in the lower dark current.

  8. The Molecular Foundry User Proposal Form Proposal: MELOSH_05-04-2009_16-09-29

    E-Print Network [OSTI]

    Lee, Jason R.

    : Monday, May 04, 2009 Photoemission of GaN and GaAs nanowires. Project Leader: Name: Prof. Nickolas Melosh. This is a Sample Only proposal. This proposal is not a follow on proposal. In previous photoemission tests GaN or electron emission. We would like to investigate the photoemissive properties of p-type and n-type GaN

  9. AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications

    E-Print Network [OSTI]

    Seo, Kwang Seok

    AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching 16, 2004; accepted May 10, 2005; published September 8, 2005) We have proposed and fabricated an AlGaN/GaN: GaN, AlGaN, HEMT, switch 1. Introduction GaN has attracted attention for high-power and high

  10. Metastable states in InGaN/GaN MQW structures doped with Sm, Eu, and Eu + Sm

    SciTech Connect (OSTI)

    Mezdrogina, M. M., E-mail: Margaret.M@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Kozhanova, Yu. V. [St. Petersburg State Polytechnical University (Russian Federation)

    2013-04-15T23:59:59.000Z

    Measurements of the microphotoluminescence (microPL) spectra of InGaN/GaN:Sm and InGaN/GaN:Eu quantum well (QW) structures show that the action of a magnetic field gives rise to Van Vleck paramagnetism for Eu{sup 3+} and Sm{sup 3+}. The macrophotoluminescence (macroPL) spectra recorded after measuring the microPL spectra of InGaN/GaN QW structures doped with Sm or Eu + Sm at a high excitation level (>10{sup 23} photons cm{sup -2} s{sup -1}) in magnetic fields contain no QW emission lines which are present in the macroPL spectra recorded before these microPL measurements. This is indicative of the presence of photoinduced defects. Annealing of the InGaN/GaN:Sm and InGaN/GaN:(Eu + Sm) structures reduces the concentration of photoinduced defects.

  11. Proposal of high efficiency solar cells with closely stacked InAs/In{sub 0.48}Ga{sub 0.52}P quantum dot superlattices: Analysis of polarized absorption characteristics via intermediate–band

    SciTech Connect (OSTI)

    Yoshikawa, H., E-mail: yoshikawa-hirofumi@sharp.co.jp; Kotani, T.; Kuzumoto, Y.; Izumi, M.; Tomomura, Y.; Hamaguchi, C. [Advanced Technology Research Laboratories, Sharp Corporation Tenri, Nara 632-8567 (Japan)

    2014-07-07T23:59:59.000Z

    We present a theoretical study of the electronic structures and polarized absorption properties of quantum dot superlattices (QDSLs) using wide–gap matrix material, InAs/In{sub 0.48}Ga{sub 0.52}P QDSLs, for realizing intermediate–band solar cells (IBSCs) with two–step photon–absorption. The plane–wave expanded Burt–Foreman operator ordered 8–band k·p theory is used for this calculation, where strain effect and piezoelectric effect are taken into account. We find that the absorption spectra of the second transitions of two–step photon–absorption can be shifted to higher energy region by using In{sub 0.48}Ga{sub 0.52}P, which is lattice–matched material to GaAs substrate, as a matrix material instead of GaAs. We also find that the transverse magnetic polarized absorption spectra in InAs/In{sub 0.48}Ga{sub 0.52}P QDSL with a separate IB from the rest of the conduction minibands can be shifted to higher energy region by decreasing the QD height. As a result, the second transitions of two–step photon–absorption by the sunlight occur efficiently. These results indicate that InAs/In{sub 0.48}Ga{sub 0.52}P QDSLs are suitable material combination of IBSCs toward the realization of ultrahigh efficiency solar cells.

  12. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current- spreading experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN

  13. Corrective Action

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Corrective Action Individual Permit: Corrective Action Certifications If confirmation monitoring sample results demonstrate that one or more TALs are exceeded at a Site, the...

  14. Categorical Exclusion Determination Form Proposed Action Title...

    Broader source: Energy.gov (indexed) [DOE]

    a virtual test bed to simulate decision-making scenarios on realistic retail and wholesale power systems and smartgrids; and (5) developing an optimized configuration of the...

  15. Categorical Exclusion Determination Form Proposed Action Title...

    Broader source: Energy.gov (indexed) [DOE]

    and coordinating distributed energy sources generated by "prosumers," such as wind and solar power, to improve the reliability, efficiency, flexibility, and communications within...

  16. Categorical Exclusion Determination Form Proposed Action Title...

    Broader source: Energy.gov (indexed) [DOE]

    using real utility data; (3) designing, developing, and testing the system architecture for the energy router software; and (4) installing the large-scale DNR Array Test...

  17. Categorical Exclusion Determination Form Proposed Action Title...

    Broader source: Energy.gov (indexed) [DOE]

    materials that are earth-abundant, environmentally friendly, and cheap with a cell architecture that is inexpensive to manufacture and electrode structures expected to have...

  18. Categorical Exclusion Determination Form Proposed Action Title...

    Broader source: Energy.gov (indexed) [DOE]

    0) Washington University in St. Louis - Optimal Operation and Management of Energy Storage Systems Based on Real-Time Predictive Modeling and Adaptive Battery Management Techniques...

  19. Categorical Exclusion Determination Form Proposed Action Title...

    Broader source: Energy.gov (indexed) [DOE]

    of a low-cost, high-efficiency 100 kW power inverter to connect photovoltaic (PV) solar panels to the grid, using revolutionary bi-directiona linsulated gate bipolar...

  20. Categorical Exclusion Determination Form Proposed Action Title...

    Broader source: Energy.gov (indexed) [DOE]

    18) Case Western Reserve University - Transformation Enabled Nitride Magnets Absent Rare Earths Program or Field Office: Advanced Research Projects Agency - Energy LocationCs)...

  1. Categorical Exclusion Determination Form Proposed Action Title...

    Broader source: Energy.gov (indexed) [DOE]

    (CD-PAR), a compact, low-cost power flow controller integrated with custom-wound transformers to control grid power flow, reducing the number of new transmission lines that will...

  2. Chapter 2 Proposed Action and Alternatives

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    mowing, trimming, weeding, replacement of plants, upgrades, etc.); * System testing, preventive maintenance, repairs of systems and components; * Snowplowing; * Road...

  3. Categorical Exclusion Determination Form Proposed Action Title...

    Broader source: Energy.gov (indexed) [DOE]

    GE Global Research - Nanoclay-reinforced Ethylene-Propylene-Rubber for Low Cost HVDC Cabling Program or Field Office: Advanced Research Projects Agency - Energy LocationCs)...

  4. Categorical Exclusion Determination Form Proposed Action Title...

    Broader source: Energy.gov (indexed) [DOE]

    4-1592) Satcon Technology Corp. - Agile Direct Grid Connect Medium Voltage 4.7-13.8kV Power Converter for PV Applications Utilizing Advanced Wide Band Gap Devices Program or Field...

  5. Categorical Exclusion (CX) Determination Proposed Action: Expansion...

    Broader source: Energy.gov (indexed) [DOE]

    yard to accommodate an additional bay for a dedicated electrical feed to a future oil pumping station that will be part of the Keystone XL project. Number and Title of Categorical...

  6. Categorical Exclusion Determination Form Proposed Action Title...

    Broader source: Energy.gov (indexed) [DOE]

    37) Northeastern University - Multiscale Development of L 10 Materials for Rare-Earth-Free Permanent Magnets Program or Field Office: Advanced Research Projects Agency - Energy...

  7. Categorical Exclusion Determination Form Proposed Action Title...

    Broader source: Energy.gov (indexed) [DOE]

    39) Pacific Northwest National Laboratory - Electric-Powered Adsorption Heat Pump for Electric Vehicles Program or Field Office:Advanced Research Projects Agency - Energy...

  8. Chapter 4 Proposed Action and Alternatives

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    efficiency of existing buildings or appliances to reduce electricity use Demand response-managing when power is used at its source Distributed generation-using small...

  9. Chapter 2 - Proposed Action and Alternatives

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office511041clothAdvanced Materials Advanced. C o w l i t z C oCNMSStaffCeriumfor the 20122-19-1 November2-1 2-1

  10. Chapter 4 Proposed Action and Alternatives

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office511041clothAdvanced Materials Advanced. C o w l i t z C oCNMSStaffCeriumfor theChapter 3 -4-1 CHAPTER 44-1

  11. Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes

    E-Print Network [OSTI]

    Cornelius S. Bausch; Aune Koitmäe; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

    2013-05-06T23:59:59.000Z

    We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

  12. Partially filled intermediate band of Cr-doped GaN films

    SciTech Connect (OSTI)

    Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

    2012-05-14T23:59:59.000Z

    We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

  13. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. [National Kaohsiung Normal University, Department of Electronic Engineering (China)], E-mail: jhtsai@nknucc.nknu.edu.tw; Chiu, S.-Y.; Lour, W.-S. [National Taiwan Ocean University, Department of Electrical Engineering (China); Guo, D.-F. [Air Force Academy, Department of Electronic Engineering (China)

    2009-07-15T23:59:59.000Z

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  14. Proposal Process

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposal Process Network R&D Overview Experimental Network Testbeds 100G SDN Testbed Testbed Description Testbed Results Current Testbed Research Proposal Process Terms and...

  15. 30-Day Federal Register Notice - Proposed

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Revised 11-2009 30-Day Federal Register Notice - Proposed 6450-01-P DEPARTMENT OF ENERGY Proposed Agency Information Collection AGENCY: U.S. Department of Energy. ACTION: Notice...

  16. administration proposed rule: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Register Vol. 72, No. 208 Monday, October 29, 2007 Proposed Rules 10, 1999). This action merely proposes to remove an erroneously approved State rule from the SIP...

  17. Unsolicited Proposals

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    2002-02-27T23:59:59.000Z

    The order sets forth Department of Energy (DOE) requirements and responsibilities for the receipt, processing, and review of unsolicited proposals (USPs). To ensure that those submitting USPs are notified in a timely manner of the status (e.g., pending, accepted for funding, or declined) of their proposals. Cancels DOE O 542.2. Certified 12-28-06.

  18. Mitigation Action Plan

    SciTech Connect (OSTI)

    Not Available

    1994-02-01T23:59:59.000Z

    This Mitigation Action Plan (MAP) focuses on mitigation commitments stated in the Supplemental Environmental Impact Statement (SEIS) and the Record of Decision (ROD) for the Naval Petroleum Reserve No. 1 (NPR-1). Specific commitments and mitigation implementation actions are listed in Appendix A-Mitigation Actions, and form the central focus of this MAP. They will be updated as needed to allow for organizational, regulatory, or policy changes. It is the intent of DOE to comply with all applicable federal, state, and local environmental, safety, and health laws and regulations. Eighty-six specific commitments were identified in the SEIS and associated ROD which pertain to continued operation of NPR-1 with petroleum production at the Maximum Efficient Rate (MER). The mitigation measures proposed are expected to reduce impacts as much as feasible, however, as experience is gained in actual implementation of these measures, some changes may be warranted.

  19. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23T23:59:59.000Z

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  20. Final Proposal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power AdministrationField8,Dist.New Mexico Feb.Information 91, 20159, 2012Page 1Final-Proposal

  1. Proposal Process

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible forPortsmouth/Paducah47,193.70 HgPromising Magnesium BatteryProposal Process Network

  2. Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP/GaAs heterostructures

    E-Print Network [OSTI]

    Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP September 2007 Utilizing lattice-matched GaAs/InGaP/GaAs heterostructures, clean micromechanical resonators are fabricated and characterized. The nearly perfect selectivity of GaAs/InGaP is demonstrated by realizing

  3. Ga nanoparticle-enhanced photoluminescence of GaAs

    SciTech Connect (OSTI)

    Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States); Katzenstein, A. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Eckerd College, St. Petersburg, Florida 33711-4744 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-09-02T23:59:59.000Z

    We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

  4. Corrective Action

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisitingContract Management Fermi Site Office (FSO)Corporate CultureCorrective Action

  5. Action Items

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613Portsmouth SitePresentations |State WindEconomic Dialogue | DepartmentACTION ITEMS

  6. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01T23:59:59.000Z

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  7. Evidence of N substitution by Mn in GaN

    E-Print Network [OSTI]

    Pereira, LMC; Decoster, S; Correia, JG; da Silva, MR; Vantomme, A; Araújo, JP

    2012-01-01T23:59:59.000Z

    We report on the lattice location of Mn in wurtzite GaN using beta? emission channeling. In addition to the majority substituting for Ga, we locate up to 20% of the Mn atoms in N sites. We propose that the incorporation of Mn in N sites is enabled under sufficiently high concentrations of N vacancies, and stabilized by a highly charged state of the Mn cations. Since N substitution by Mn impurities in wurtzite GaN has never been observed experimentally or even considered theoretically before, it challenges the current paradigm of transition metal incorporation in wide-gap dilute magnetic semiconductors.

  8. Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well

    SciTech Connect (OSTI)

    Asami, T.; Nosho, H.; Tackeuchi, A. [Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555 (Japan); Li, L. H.; Harmand, J. C. [Laboratory for Photonics and Nanostructures-CNRS, Site Alcatel de Marcoussis, Route de Nozay, 91460 Marcoussis (France); Lu, S. L. [Suzhou Institute of Nano-tech and Nano-bionics, CAS, Dushu, Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou 215125 (China)

    2011-12-23T23:59:59.000Z

    We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn{sub 0.36}N{sub 0.006}AsSb{sub 0.015} well, 5-nm-thick GaN{sub 0.01}AsSb{sub 0.11} intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.

  9. Notice of proposed rulemaking, Energy Efficiency and Sustainable...

    Broader source: Energy.gov (indexed) [DOE]

    DOE regarding the regulatory actions discussed herein. Notice of proposed rulemaking, Energy Efficiency and Sustainable Design Standards for New Federal Buildings, 75 Fed. Reg....

  10. Compositionally-graded InGaAsInGaP alloys and GaAsSb alloys for metamorphic InP on GaAs

    E-Print Network [OSTI]

    Compositionally-graded InGaAs­InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs Li Yang a of tandem graded layers of InGaAs and InGaP with compositional grading of the In concentration. This tandem

  11. Study of the breakdown failure mechanisms for power AlGaN/GaN HEMTs implemented using a RF compatible process

    E-Print Network [OSTI]

    Ng, Wai Tung

    ]. Mishra et al. proposed a SiO2/Si3N4 bi-layer structure as the gate insulator [6]. Even though these MISStudy of the breakdown failure mechanisms for power AlGaN/GaN HEMTs implemented using a RF Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology

  12. A planar force-constant model for phonons in wurtzite GaN and AlN: Application to hexagonal GaN/AlN superlattices

    E-Print Network [OSTI]

    Lingjun Wang; Guanghong Wei; Jian Zi

    1998-12-17T23:59:59.000Z

    A planar force-constant model is developed for longitudinal phonons of wurtzite GaN and AlN propagating along the [0001] direction. The proposed model is then applied to the study of the phonon modes in hexagonal GaN/AlN superlattices in the longitudinal polarization. The confinement of the superlattice phonon mode is discussed.

  13. Action Requested: THE UNIVERSITY OF MICHIGAN

    E-Print Network [OSTI]

    Kamat, Vineet R.

    Subject: Action Requested: THE UNIVERSITY OF MICHIGAN REGENTS COMMUNICATION ACTION REQUEST on the basis of being Michigan residents. Second, the proposed Guidelines significantly expand the ways an alternative test for establishing eligibility for in-state tuition based on attendance at Michigan high

  14. QER- Comment of Berkshire Environmental Action Team

    Broader source: Energy.gov [DOE]

    Dear members of the Quadrennial Energy Review Task Force, Please find attached comments from the Berkshire Environmental Action Team, Inc. (BEAT) regarding the proposed natural gas pipeline expansion. Thank you for considering our comments.

  15. LANSCE | User Resources | Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposals | 2014 Lujan Neutron Scattering Center: First Call for Proposals is now Closed. Thank you for your Submission. Proposal Submission The Lujan Center call for proposals...

  16. CAHNRS PROPOSAL PROCESSING CHART Proposal budget less

    E-Print Network [OSTI]

    Collins, Gary S.

    CAHNRS PROPOSAL PROCESSING CHART Proposal budget less than $1M Proposal budget greater than $1M., prepares budget and/or proposal pkg & eREX eREX submitted to CAHNRS Grant Team for review at least 2 days-6885 Contact Office of Major Grant Development for editing and/or budget, proposal pkg, eREX preparation

  17. Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors

    E-Print Network [OSTI]

    Pala, Nezih

    Torr and consisted of a 1.4 lm undoped GaN buffer layer on i-SiC substrate, * Corresponding authorLow frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors N. Pala a November 2002 Abstract Low-frequency noise in AlGaN/InGaN/GaN double heterostructure field effect

  18. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    E-Print Network [OSTI]

    Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan

    2010-08-24T23:59:59.000Z

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  19. Ultra High p-doping Material Research for GaN Based Light Emitters

    SciTech Connect (OSTI)

    Vladimir Dmitriev

    2007-06-30T23:59:59.000Z

    The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

  20. DOE Initiates Enforcement Actions Against 4 Showerhead Manufacturers...

    Energy Savers [EERE]

    Against 4 Showerhead Manufacturers (Notice of Proposed Civil Penalty and Requests for Test Data Issued) DOE Initiates Enforcement Actions Against 4 Showerhead Manufacturers...

  1. UID-GaN doping1016 cm-3 2 m 5 m2 m

    E-Print Network [OSTI]

    Boyer, Edmond

    2 µm Drain Silicon UID-GaN ­ doping1016 cm-3 1.1 µm 30 nm 2 µm GateSource 2 µm 5 µm2 µm AirAir Al0.25GaN ­ doping1015 cm-3 30 nm Scalable normally-off MIS-HEMT using Fluorine implantation below-Electron-Mobility-Transistor (MIS-HEMT) is proposed. The design is based on the implantation of fluorine ions in the GaN layer below

  2. Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption In this paper, we present four GaN based polar quantum structures grown on c-plane embedded in p-i-n diode GaN/AlGaN quantum structures for operation in the deep-UV spectral region and the other three

  3. Determination of subband energies and 2DEG characteristics of Al{sub x}Ga{sub 1?x}N/GaN heterojunctions using variational method

    SciTech Connect (OSTI)

    Manouchehri, Farzin; Valizadeh, Pouya; Kabir, M. Z., E-mail: kabir@encs.concordia.ca [Department of Electrical and Computer Engineering, Concordia University, Montreal, H3G 1M8 (Canada)

    2014-03-15T23:59:59.000Z

    A physics-based model based on the variational method for analyzing the two dimensional electron gas (2DEG) characteristics of polar AlGaN/GaN heterojunctions is developed. The 2DEG carrier concentration, the first and second energy subbands, and the position of the Fermi energy level are calculated for various barrier thicknesses, Al mole fractions, background dopant concentrations, and gate voltages for gated AlGaN/GaN heterojunctions. The results are in good agreement with the data reported based on self-consistent method. Whereas the aforementioned report has dealt with specific values of Al mole fraction, barrier thickness, and unintentional doping level, the present work provides a basis for calculating the 2DEG characteristics for the full range of these parameters. Furthermore, according to the proposed model, the applicability of the triangular approximation of the quantum well in AlGaN/GaN heterojunctions is evaluated.

  4. RCRA corrective action program guide (Interim)

    SciTech Connect (OSTI)

    Not Available

    1993-05-01T23:59:59.000Z

    The US Department of Energy (DOE) is responsible for compliance with an increasingly complex spectrum of environmental regulations. One of the most complex programs is the corrective action program proposed by the US Environmental Protection Agency (EPA) under the authority of the Resource Conservation and Recovery Act (RCRA) as amended by the Hazardous and Solid Waste Amendments (HSWA). The proposed regulations were published on July 27, 1990. The proposed Subpart S rule creates a comprehensive program for investigating and remediating releases of hazardous wastes and hazardous waste constituents from solid waste management units (SWMUs) at facilities permitted to treat, store, or dispose of hazardous wastes. This proposed rule directly impacts many DOE facilities which conduct such activities. This guidance document explains the entire RCRA Corrective Action process as outlined by the proposed Subpart S rule, and provides guidance intended to assist those persons responsible for implementing RCRA Corrective Action at DOE facilities.

  5. Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors

    SciTech Connect (OSTI)

    Asubar, Joel T., E-mail: joel@rciqe.hokudai.ac.jp; Yatabe, Zenji; Hashizume, Tamotsu [Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, Sapporo (Japan); Japan Science and Technology Agency (JST), CREST, 102-0075 Tokyo (Japan)

    2014-08-04T23:59:59.000Z

    Dramatic reduction of thermal resistance was achieved in AlGaN/GaN Multi-Mesa-Channel (MMC) high electron mobility transistors (HEMTs) on sapphire substrates. Compared with the conventional planar device, the MMC HEMT exhibits much less negative slope of the I{sub D}-V{sub DS} curves at high V{sub DS} regime, indicating less self-heating. Using a method proposed by Menozzi and co-workers, we obtained a thermal resistance of 4.8?K-mm/W at ambient temperature of ?350?K and power dissipation of ?9?W/mm. This value compares well to 4.1?K-mm/W, which is the thermal resistance of AlGaN/GaN HEMTs on expensive single crystal diamond substrates and the lowest reported value in literature.

  6. Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1

    E-Print Network [OSTI]

    Nabben, Reinhard

    Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1 , T. Stempel1/37, 01-142 Warsaw, Poland ABSTRACT Time-integrated and time-resolved photoluminescence measurements on InGaN quantum wells grown by MOCVD on two different substrates (sapphire and GaN) show that the lumines- cence

  7. Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers

    SciTech Connect (OSTI)

    Yang, Yujue; Wang, Junxi; Li, Jinmin; Zeng, Yiping, E-mail: ypzeng@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-06-21T23:59:59.000Z

    The effects of InGaN-based light-emitting diodes (LEDs) with Al composition increasing and decreasing GaN-AlGaN barriers along the growth direction are studied numerically. Simulation results suggest that the LEDs with GaN-AlGaN composition-decreased barriers show more significant enhancement of light-output power and internal quantum efficiency than LEDs with composition-increasing GaN-AlGaN barriers when compared with the conventional LED with GaN barriers, due to the improvement in hole injection efficiency and electron blocking capability. Moreover, the optical performance is further improved by replacing GaN-AlGaN barriers with AlGaN-GaN barriers of the same Al composition-decreasing range, which are mainly attributed to the modified band diagrams. In addition, the major causes of the different efficiency droop behaviors for all the designed structures are explained by the electron leakage current and the different increase rates of hole concentration with injection current.

  8. Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers

    E-Print Network [OSTI]

    Keogh, David Martin

    2006-01-01T23:59:59.000Z

    T. Henderson, “High- Speed InGaP/GaAs HBT’s Using a SimpleA typical AlGaAs/GaAs HBT or InGaP/GaAs HBT has the opposite

  9. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-07-07T23:59:59.000Z

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  10. action proposed plan: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sustainable Transportation of climate on the world have forced us to reassess our way of living and come up with viable, sustainable Feschotte, Cedric 53 Validating Plans with...

  11. 4.0 IMPACTS OF THE PROPOSED ACTION AND ALTERNATIVES

    Broader source: Energy.gov (indexed) [DOE]

    Air Quality Control Region (AQCR). The region is under authority of the Regional Air Pollution Control Agency (RAPCA), which monitors ambient levels of criteria...

  12. Implementation Proposal for the National Action Plan on Demand Response -

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742Energy ChinaofSchaefer To:Department ofOralGovernmentStandardsIdahoby4and ExamplePostingJuly 2011

  13. CATEGORICAL EXCLUSION (CX) DETERMINATION BRIEF DESCRIPTION OF PROPOSED ACTION:

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office511041clothAdvanced Materials Advanced. C o w l i t z C o . C l a r k C o'IU "~I :~~~r;::::N

  14. CATEGORICAL EXCLUSION (CX) DETERMINATION BRIEF DESCRIPTION OF PROPOSED ACTION:

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office511041clothAdvanced Materials Advanced. C o w l i t z C o . C l a r k C o'IU "~I :~~~r;::::N'u

  15. CATEGORICAL EXCLUSION (CX) DETERMINATION BRIEF DESCRIPTION OF PROPOSED ACTION:

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office511041clothAdvanced Materials Advanced. C o w l i t z C o . C l a r k C o'IU "~I

  16. ACTION DESCRIPTION MEMORANDUM PROPOSED DECONTAMINATION OF THREE BUILDINGS AT THE

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA groupTuba City, Arizona, DisposalFourthN V4100U.S.Indian10WayneAnnualLinited[ {

  17. United States Forest Service - Forest Service Schedule of Proposed Actions

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTown of Ladoga, IndianaTurtleCooperative Place: Beaver RedirectResponses | Open||

  18. Climate change action plan

    E-Print Network [OSTI]

    Delivery Climate change action plan 2009-2011 #12;2 | Climate change action plan ©istockphoto.com #12;Climate Change Action Plan Climate change action plan | 3 Contents Overview 4 Preface and Introduction 5 Climate change predictions for Scotland 6 The role of forestry 7 Protecting and managing

  19. LANSCE | User Resources | Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Proposals LANSCE accepts proposals for the Lujan Neutron Scattering Center, Proton Radiography (pRad) and the Weapons Neutron Research Facility (WNR). Calls for proposals are...

  20. Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta

    E-Print Network [OSTI]

    Svane, Axel Torstein

    69,71 Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta Department of Physics properties of wurtzite GaN are studied by Ga nuclear magnetic resonance NMR in a GaN bulk crystal containing GaN is a wide band-gap semiconductor which crystallizes in the hexagonal wurtzite structure

  1. Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions Y Abstract Compositionally abrupt InGaP/GaAs heterojunctions grown by gas-source molecular beam epitaxy have the InGaP layer show non-uniform In and Ga distribution. About 1.5 nm of transition region

  2. Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs Feng Gao1, USA tpalacios@mit.edu; (617) 324-2395 Keywords: AlGaN/GaN HEMTs, reliability, moisture, electro-chemical reactions Abstract The nature of structural degradation in AlGaN/GaN high electron mobility transistors

  3. Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High

    E-Print Network [OSTI]

    Li, Yat

    Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors, 2006 ABSTRACT We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire-organic chemical vapor deposition (MOCVD). Transmission electron microscopy (TEM) studies reveal that the GaN/ AlN/AlGaN

  4. Beta decay of Ga-62 

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

  5. Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

    SciTech Connect (OSTI)

    Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

    2013-08-19T23:59:59.000Z

    We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

  6. Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

    E-Print Network [OSTI]

    Joh, Jungwoo

    In this paper, a simple and reliable method to estimate the channel temperature of GaN high-electron mobility transistors (HEMTs) is proposed. The technique is based on electrical measurements of performance-related figures ...

  7. Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs Donghyun Jin

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs Donghyun Jin-resistance (RON) in high- voltage GaN High-Electron-Mobility Transistors (HEMTs). We use a newly proposed dynamic. All rights reserved. 1. Introduction In the last decade, GaN Field-Effect Transistors have emerged

  8. 0. 98 [mu]m InGaAs-InGaAsP-InGaP GRIN-SCH SL-SQW lasers for coupling high optical power into single-mode fiber

    SciTech Connect (OSTI)

    Ohkubo, Michio; Namiki, Shu; Ijichi, Tetsuro; Iketani, Akira; Kikuta, Toshio (Furukawa Electric Co., Ltd., Yokohama (Japan))

    1993-06-01T23:59:59.000Z

    A CW coupled optical power of 75 mW into a single-mode fiber (SMF) at a driving current of 200 mA was achieved by InGaAs-InGaAsP-InGaP GRIN-SCH SL-SQW ridge waveguide lasers emitting at 0.98 [mu]m. The GRIN-SCH profile was optimized to minimize the series resistance due to spikes at GaAs-InGaP heterointerfaces. The other approach was proposed for high coupling efficiency into the SMF with cutoff wavelength of 0.88 [mu]m: The ridge mesa width was precisely controlled around 2 [mu]m, and an aspect ratio of far-field pattern ([theta][sub [perpendicular

  9. ACTIONS AND PARTIAL ACTIONS OF INDUCTIVE CONSTELLATIONS

    E-Print Network [OSTI]

    Gould, Victoria

    ACTIONS AND PARTIAL ACTIONS OF INDUCTIVE CONSTELLATIONS VICTORIA GOULD AND CHRISTOPHER HOLLINGS structure of a semigroup can be recovered from a partial order it possesses. Date: August 13, 2009. 2000 and FEDER, and also FCT post-doctoral grant SFRH/BPD/34698/2007. 1 #12;2 VICTORIA GOULD AND CHRISTOPHER

  10. Derivative actions in China 

    E-Print Network [OSTI]

    Lin, Shaowei

    2014-07-02T23:59:59.000Z

    The enactment of derivative action was expected to be actively used by shareholders to protect their interests. In fact, it turned out that this reform effort seemed futile as the right to engage in such actions was ...

  11. 2014 Joint Action Workshop

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Joint Action Workshop is an annual event for joint action agencies and their members to meet informally and discuss emerging policy, regulatory, and power supply issues, and other topics...

  12. October 2006 Standards Actions

    Broader source: Energy.gov (indexed) [DOE]

    Project No. SAFT-0109 Continued on next page Standards Actions Page 2 October 2006 2.0 NON-GOVERNMENT STANDARDS ACTIONS 2.1 American National Standards Institute American...

  13. July 2006 Standards Actions

    Broader source: Energy.gov (indexed) [DOE]

    were received in June 2006. Continued on next page Standards Actions Page 2 July 2005 2.0 Non-Government Standards Actions 2.1 American National Standards Institute (ANSI)...

  14. Federal Register / Vol. 53, No. 250 / Thursday, December 29, 1988 / Proposed Rules progress in revising the lists. The

    E-Print Network [OSTI]

    reclassification endangered to threatened.......................... .............. .1 Final delisting Proposed delisting ....................................... 1 TABLE 3.-POSSIBLE LISTING ACTIONS FOR WHICH

  15. Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system

    E-Print Network [OSTI]

    Coldren, Larry A.

    Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system Erik J InGaAs/InGaAsP/InGaP material system. © 2005 American Institute of Physics. DOI: 10 of achieving QWI in such active regions.3,4 However, InGaAs/InGaAsP/InGaP-based de- vices offer numerous

  16. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23T23:59:59.000Z

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  17. Evanescent-wave pumped room-temperature single-mode GaAs/AlGaAs core-shell nanowire lasers

    SciTech Connect (OSTI)

    Wei, Wei; Zhang, Xia, E-mail: xzhang@bupt.edu.cn; Ren, Xiaomin [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, P.O. Box 66, Beijing 100876 (China); Liu, Yange, E-mail: ygliu@nankai.edu.cn; Wang, Zhi [Key Laboratory of Optical Information and Technology, Ministry of Education and Institute of Modern Optics, Nankai University, Tianjin 300071 (China)

    2014-06-02T23:59:59.000Z

    Evanescent-wave pumped room-temperature single-mode GaAs/AlGaAs core-shell nanowire lasers are proposed and demonstrated. The nanowires are axially excited by evanescent wave outside a microfiber with a diameter about 10??m via a ns-pulse laser. The lasing emission with a low effective threshold less than 90 nJ is achieved at 868.62?nm along with a linewidth of ?1.8?nm. Moreover, multiple lasing lines in a wavelength range from 852.56?nm to 882.48?nm are observed. The mechanism of diverse lasing wavelengths is revealed. Furthermore, the proposed GaAs/AlGaAs nanowire laser has advantages such as simple structure, easy to operate, and controllable lasing wavelength, tending to be practical in optical communications and integrated photonic circuits.

  18. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01T23:59:59.000Z

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  19. AlGaAs/InGaAs/AlGaAs Double Barrier

    E-Print Network [OSTI]

    Perera, A. G. Unil

    -state Er. Tunneling Quantum Dot Sensors for Multi-band Infrared and Terahertz Radiation Detection G radiation detection are demonstrated. In T-QDIP structures, photoabsorption takes place in InGaAs QDs (due

  20. Correlation of action potentials in adjacent neurons

    E-Print Network [OSTI]

    Shneider, M N

    2015-01-01T23:59:59.000Z

    A possible mechanism for the synchronization of action potential propagation along a bundle of neurons (ephaptic coupling) is considered. It is shown that this mechanism is similar to the salutatory conduction of the action potential between the nodes of Ranvier in myelinated axons. The proposed model allows us to estimate the scale of the correlation, i.e., the distance between neurons in the nervous tissue, wherein their synchronization becomes possible. The possibility for experimental verification of the proposed model of synchronization is discussed.

  1. DOCUMENTS DE TRAVAIL -WORKING PAPERS Quel cadre d'implication du secteur priv proposer

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    liquidité ­ Action collective. TITLE Private Sector Involvement and the Resolution of Liquidity Crises bankruptcy rules. KEY-WORDS Private sector involvement ­ Liquidity crisis ­ Collective action. JEL in Emerging Markets: Evaluating Alternative Proposals. ABSTRACT Private sector involvement in the resolution

  2. Composition and Interface Analysis of InGaN/GaN Multiquantum...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells...

  3. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

    2010-10-14T23:59:59.000Z

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  4. PRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS

    E-Print Network [OSTI]

    McCluskey, Matthew

    -µm thick GaN layer deposited on a sapphire substrate, and it is capped by a 0.2-µm GaN:Mg pPRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS W. Shan,* J.W. Ager pressure on optical transitions in InGaN/GaN multiple quantum wells (MQWs) has been studied

  5. Free carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1

    E-Print Network [OSTI]

    As, Donat Josef

    ) substrate,7 with GaN and AlGaN layer thickness of 600 nm and 30 nm, respectively. The layer thicknessFree carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1 T. Li,1 J. Y. Huang,1 F. A (Received 24 February 2012; accepted 19 March 2012; published online 3 April 2012) Cubic Al0.3Ga0.7N/GaN

  6. InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy with a valved phosphorus cracker

    E-Print Network [OSTI]

    Woodall, Jerry M.

    InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular; accepted 17 November 1995 The growth and device characterization of an InGaP/GaAs double-quality phosphorus-containing compounds.1­4 The growth of high-performance InGaP/ GaAs and InGaAs/InP single

  7. InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P. C. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Baca, A. G. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Li, N. Y. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Xie, X. M. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Hou, H. Q. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Armour, E. [Emcore Corporation, Somerset, New Jersey 08873 (United States)] [Emcore Corporation, Somerset, New Jersey 08873 (United States)

    2000-04-17T23:59:59.000Z

    We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the breakdown voltage (BV{sub CEO}) is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with {delta} doping is inserted at the base-collector junction. The improved device has a peak current gain of seven with ideal current-voltage characteristics. (c) 2000 American Institute of Physics.

  8. InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P.C.; Baca, A.G.; Li, N.Y.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-10T23:59:59.000Z

    The authors have demonstrated a functional NpN double heterojunction bipolar transistor (DHBT) using InGaAsN for base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs HBT. The lower V{sub ON} is attributed to the smaller bandgap (E{sub g}=1.20eV) of MOCVD grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the BV{sub CEO} is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs Hbts of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger {triangle}E{sub C} between InGaAsN and GaAs, a graded InGaAs layer with {delta}-doping is inserted at the base-collector junction. The improved device has a peak current gain of 7 with ideal IV characteristics.

  9. Protective Actions and Reentry

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    1997-08-21T23:59:59.000Z

    This volume defines appropriate protective actions and reentry of a site following an emergency. Canceled by DOE G 151.1-4.

  10. November 2006 Standards Actions

    Broader source: Energy.gov (indexed) [DOE]

    Standards Actions 2 American National Standards Institute (ANSI) 2 American Society of Mechanical Engineers (ASME) 2 ASTM International 2 American Nuclear Society...

  11. October 2007 Standards Actions

    Broader source: Energy.gov (indexed) [DOE]

    Standards Actions 1 American National Standards Institute (ANSI) 1 American Society of Mechanical Engineers (ASME) 2 ASTM International 2 American Nuclear Society...

  12. May 2008 Standards Actions

    Broader source: Energy.gov (indexed) [DOE]

    Standards Actions 2 American National Standards Institute (ANSI) 2 American Society of Mechanical Engineers (ASME) 2 ASTM International 2 American Nuclear Society...

  13. May 2006 Standards Actions

    Broader source: Energy.gov (indexed) [DOE]

    Standards Actions 1 American National Standards Institute (ANSI) 1 American Society of Mechanical Engineers (ASME) 2 ASTM International 2 American Nuclear Society...

  14. Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction

    E-Print Network [OSTI]

    Sirenko, Andrei

    Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied for x-ray diffraction and reciprocal space mapping of InGaN/GaN multiple-quantum-well MQW structures grown on the sidewalls of 10- m-wide triangular GaN ridges with 1-1.1 facets. Samples were produced

  15. GaN0.011P0.989–GaP Double-Heterostructure Red Light-Emitting Diodes Directly Grown on GaP Substrates

    E-Print Network [OSTI]

    Tu, Charles W

    2000-01-01T23:59:59.000Z

    and C. W. Tu, GaN diodes on GaP substrates, 2000. [7] J. W.on a GaN directly grown on a GaP substrate was successfullyDH) directly a GaN grown on a (100) GaP substrate. Fig. 1(a)

  16. AlGaAs/InGaAsN/GaAs PnP double heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P.C.; Baca, A.G.; Li, N.Y.; Sharps, P.R.; Hou, H.Q.; Laroche, J.R.; Ren, F.

    2000-01-11T23:59:59.000Z

    The authors have demonstrated a functional MOCVD-grown AlGaAs/InGaAsN/GaAsPnP DHBT that is lattice matched to GaAs and has a peak current gain ({beta}) of 25. Because of the smaller bandgap (E{sub g}=1.20eV)of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{sub ON} of 0.79 V, 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. The BV{sub CEO} is 12 V, consistent with its GaAs collector thickness and doping level.

  17. Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Mazumder, B.; Hurni, C. A.; Zhang, J. Y.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, M. H.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2012-08-27T23:59:59.000Z

    In this letter, we report on the interfacial abruptness of GaN/AlN/GaN heterostructures with pulsed laser atom probe tomography (APT). The samples were grown by plasma-assisted molecular beam epitaxy (MBE) under both metal-rich and N-rich conditions on both Ga-polar (0001) GaN templates and N-polar (0001) GaN substrates. An NH{sub 3} assisted MBE technique was involved to grow similar Ga-polar and N-polar structures on GaN:Fe substrates and GaN/Al{sub 2}O{sub 3} templates, respectively, for a comparison study. We find in all cases the interface with net positive polarization charge was chemically abrupt, whereas the interface with net negative polarization charge was diffuse. We discuss the implications on device design and performance. These data validate the efficiency of APT in studying interfaces for better performance in devices.

  18. Superior radiation-resistant properties of InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Yamaguchi, M.; Okuda, T.; Taylor, S.J.; Takamoto, T. [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan)] [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan); Ikeda, E.; Kurita, H. [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)

    1997-03-01T23:59:59.000Z

    The observation of minority-carrier injection-enhanced annealing of radiation damage to InGa{sub 0.5}P{sub 0.5}/GaAs tandem solar cells is reported. Radiation resistance of InGaP/GaAs tandem solar cells as is similar with GaAs-on-Ge cells have been confirmed with 1 MeV electron irradiations. Moreover, minority-carrier injection under light illumination and forward bias conditions is shown to enhance defect annealing in InGaP and to result in the recovery of InGaP/GaAs tandem solar cell properties. These results suggest that the InGaP/GaAs(/Ge) multijunction solar cells and InGaP-based devices have great potential for space applications. {copyright} {ital 1997 American Institute of Physics.}

  19. CY15 Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to JLF proposals that link to experiments, or proposed experiments, at the x-ray free electron laser facility Linear Coherent Light Source (LCLS) located at the SLAC National...

  20. Energy Action Month

    Broader source: Energy.gov [DOE]

    The Federal Energy Management Program (FEMP) supports Energy Action Month by offering materials that promote energy- and water-saving practices in Federal facilities. This year's outreach materials call on Federal employees to take action and empower leadership, innovation, and excellence to realize a secure energy future.

  1. EPA proposal sets MTBE back

    SciTech Connect (OSTI)

    Lucas, A.

    1995-01-04T23:59:59.000Z

    Methyl tert-butyl ether (MTBE) producers were looking for a boost from the official New Year`s start of EPA`s reformulated gasoline (RFG) program. But that prospect has been dimmed by an EPA-proposal-in reaction to concerns about RFG prices-to allow states to withdraw from the program. The states that have opted to out make up 5%-6% of the total RFG pool says Arthur Zadronzy, director/government outreach for MTBE producer Arco Chemical. {open_quotes}This is not a major hit, but it is one we have felt,{close_quotes} he says. Despite the state and EPA actions, MTBE producers are not worried about long-term consequences.

  2. Investigation of buffer traps in AlGaN/GaN-on-Si devices by thermally stimulated current spectroscopy and back-gating measurement

    SciTech Connect (OSTI)

    Yang, Shu; Zhou, Chunhua; Jiang, Qimeng; Chen, Kevin J., E-mail: eekjchen@ust.hk [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong); Lu, Jianbiao; Huang, Baoling [Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)] [Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2014-01-06T23:59:59.000Z

    Thermally stimulated current (TSC) spectroscopy and high-voltage back-gating measurement are utilized to study GaN buffer traps specific to AlGaN/GaN lateral heterojunction structures grown on a low-resistivity Si substrate. Three dominating deep-level traps in GaN buffer with activation energies of ?E{sub T1}???0.54?eV, ?E{sub T2}???0.65?eV, and ?E{sub T3}???0.75?eV are extracted from TSC spectroscopy in a vertical GaN-on-Si structure. High back-gate bias applied to the Si substrate could influence the drain current in an AlGaN/GaN-on-Si high-electron-mobility transistor in a way that cannot be explained with a simple field-effect model. By correlating the trap states identified in TSC with the back-gating measurement results, it is proposed that the ionization/deionization of both donor and acceptor traps are responsible for the generation of buffer space charges, which impose additional modulation to the 2DEG channel.

  3. Beta decay of Ga-62

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    from the ex- perimental ft value for a 01?01 b decay between analog states with the relation @3# 0556-2813/2003/68~1!/015501~6!/$20.00 68 015501- of 62Ga . Hardy, V. E. Mayes, R. G. Neilson, M. Sanchez-Vega, and R. E. Tribble y, College Station...

  4. MSU is an affirmative-action, equal-opportunity employer.

    E-Print Network [OSTI]

    the program, the College of Agriculture and Natural Resources requested that further action at the university level be suspended. 2. Energy Minor. A proposal for a new minor in energy was considered the departmental undergraduate studies committees. Action was postponed pending input from those committees. 3

  5. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    Logo GaN nanowires show more 3D piezoelectricity than bulk GaN admin / January 11, 2012 individual gallium nitride (GaN) nanowires showing strong piezoelectric effect in 3D. This is in spite of the fact that each nanowire only measures 100nm in diameter. While GaN is ubiquitous in optoelectronic

  6. Self-aligned AlGaN/GaN transistors for sub-mm wave applications

    E-Print Network [OSTI]

    Saadat, Omair I

    2010-01-01T23:59:59.000Z

    This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

  7. Environmental assessment of remedial action at the Spook uranium mill tailings site, Converse County, Wyoming

    SciTech Connect (OSTI)

    Not Available

    1989-04-01T23:59:59.000Z

    This document assesses a joint remedial action proposed by the US Department of Energy Uranium Mill Tailings Remedial Action Project and the State of Wyoming Abandoned Mine Lands Program. The proposed action would consist of stabilizing uranium mill tailings and other associated contaminated materials within an inactive open pit mine on the site; backfilling the open pit with overburden materials that would act as a radon barrier and cover; and recontouring and seeding all disturbed areas to premining conditions. The impacts of no action at this site are addressed as the alternative to the proposed action. 74 refs., 12 figs., 19 tabs.

  8. Invited Paper GaN HEMT reliability

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    Invited Paper GaN HEMT reliability J.A. del Alamo *, J. Joh Microsystems Technology Laboratories mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier

  9. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01T23:59:59.000Z

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  10. Finite Temperature Effective Actions

    E-Print Network [OSTI]

    Ashok Das; J. Frenkel

    2009-08-27T23:59:59.000Z

    We present, from first principles, a direct method for evaluating the exact fermion propagator in the presence of a general background field at finite temperature, which can be used to determine the finite temperature effective action for the system. As applications, we determine the complete one loop finite temperature effective actions for 0+1 dimensional QED as well as the Schwinger model. These effective actions, which are derived in the real time (closed time path) formalism, generate systematically all the Feynman amplitudes calculated in thermal perturbation theory and also show that the retarded (advanced) amplitudes vanish in these theories.

  11. InAs=InGaP=GaAs heterojunction power Schottky rectifiers

    E-Print Network [OSTI]

    Woodall, Jerry M.

    InAs=InGaP=GaAs heterojunction power Schottky rectifiers A. Chen, M. Young and J.M. Woodall A low-matched InGaP on GaAs, to make a high-temperature power rectifier. The LT molecular beam epitaxy technique enables the formation of an abrupt interface between InAs and InGaP. This heterojunction rectifier

  12. Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs Rajkumar Santhakumar, Yi have been designed and fabricated using AlGaN/GaN HEMTs. One of them uses a standard HEMT for the unit-gate distributed amplifier achieves a CW peak output power of 1W and a PAE of about 16% at 4GHz. Index Terms -- GaN

  13. Role of strain in polarization switching in semipolar InGaN/GaN quantum wells

    E-Print Network [OSTI]

    Role of strain in polarization switching in semipolar InGaN/GaN quantum wells Qimin Yan,1,a Patrick November 2010 The effect of strain on the valence-band structure of 112¯2 semipolar InGaN grown on GaN D6 is calculated for GaN and InN using density functional theory with the Heyd­Scuseria­ Ernzerhof

  14. GaN/AlGaN heterojunction infrared detector responding in 814 and 2070 m ranges

    E-Print Network [OSTI]

    Perera, A. G. Unil

    GaN/AlGaN heterojunction infrared detector responding in 8­14 and 20­70 m ranges G. Ariyawansa, M October 2006 A GaN/AlGaN heterojunction interfacial work function internal photoemission infrared detector, the work demonstrates 54 m 5.5 THz operation of the detector based on 1s­2p± transition of Si donors in GaN

  15. 44920 Federal Register / Vol. 78, No. 143 / Thursday, July 25, 2013 / Proposed Rules 8. Taking of Private Property

    E-Print Network [OSTI]

    of Private Property This proposed rule would not cause a taking of private property or otherwise have taking implications under Executive Order 12630, Governmental Actions and Interference with Constitutionally Protected This proposed rule is not a ``significant energy action'' under Executive Order 13211, Actions Concerning

  16. SPPR Group Proposal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    members will execute in August 2011. Facilities Use Charge agreements are drafted: In review stage by customer group; Proposal specifies annual update of charge amount...

  17. SSRL- Proposal Review Panel

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stanford Synchrotron Radiation Lab search Go an error occurred while processing this directive Proposal Review Panel Sub Panels Structural Molecular Biology & Biophysics...

  18. Categories for IGPPS Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for IGPPS Proposals High quality, cutting-edge science in the areas of astrophysics, space physics, solid planetary geoscience, and climate science. Contact Director Harald...

  19. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

    SciTech Connect (OSTI)

    Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

    2012-01-01T23:59:59.000Z

    AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

  20. EA-1628: Construction and Operation of a Proposed Lignocellulosic Biorefinery, Emmetsburg, Iowa

    Broader source: Energy.gov [DOE]

    This EA evaluated the potential environmental impacts of a DOE proposal to provide financial assistance (the Proposed Action) to POET Project LIBERTY, LLC (POET) for the construction and operation...

  1. EXPANSIVE SUBDYNAMICS FOR ALGEBRAIC Zd-ACTIONS MANFRED EINSIEDLER, DOUGLAS LIND, RICHARD MILES, AND THOMAS WARD

    E-Print Network [OSTI]

    Lind, Douglas A.

    EXPANSIVE SUBDYNAMICS FOR ALGEBRAIC Zd-ACTIONS MANFRED EINSIEDLER, DOUGLAS LIND of Zd * *on compact metric spaces was proposed by Boyle and Lind in terms of expansive

  2. EIS-0195: Remedial Actions at Operable Unit 4, Fernald Environmental Management Project, Fernald, Ohio

    Broader source: Energy.gov [DOE]

    This EIS evaluates the potential environmental impacts of a proposal to conduct remedial action at Operable Unit 4 at the Fernald Environmental Management Project.

  3. Climate Action Plan (Michigan)

    Broader source: Energy.gov [DOE]

    On November 14, 2007, Governor Jennifer M. Granholm issued Executive Order No. 2007-42 establishing the Michigan Climate Action Council (MCAC). The Council is comprised of members representing...

  4. August 2007 Standards Actions

    Broader source: Energy.gov (indexed) [DOE]

    August 2007 1.5 DOE Technical Standards Published No entries were received in August 2007 2.0 Non-Government Standards Actions 2.1 American National Standards Institute (ANSI)...

  5. July 2007 Standards Actions

    Broader source: Energy.gov (indexed) [DOE]

    in June 2007 1.5 DOE Technical Standards Published No entries were received in June 2007 2.0 Non-Government Standards Actions 2.1 American National Standards Institute (ANSI)...

  6. April 2007 Standards Actions

    Broader source: Energy.gov (indexed) [DOE]

    and Injury Surveillance Program Guidelines, 03222007; DOE-STD-1190-2007, OCSH-0005 2.0 Non-Government Standards Actions 2.1 American National Standards Institute (ANSI)...

  7. Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer

    SciTech Connect (OSTI)

    Chen, Z.; Denbaars, S. P. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106 (United States); Pei, Y.; Newman, S.; Chu, R.; Brown, D.; Keller, S.; Mishra, U. K. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Chung, R.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2009-03-16T23:59:59.000Z

    Semi-insulating (SI) GaN layers were grown on 4H-SiC substrates by inserting an AlGaN layer between the AlN buffer and the GaN layer. Secondary ion mass spectroscopy measurements showed that the AlGaN layer prevented Si from diffusing from the substrate into the GaN layer. X-ray diffraction and atomic force microscopy analyses showed that an optimized AlGaN interlayer does not degrade the crystal quality or surface morphology of the SI GaN. The room temperature mobility of an AlGaN/GaN heterostructure using this SI GaN was 2200 cm{sup 2}/V s. High electron mobility transistors (HEMTs) with 0.65 {mu}m long gates were also fabricated on these SI GaN buffers. A power density of 19.0 W/mm with a power added efficiency of 48% was demonstrated at 10 GHz at a drain bias of 78 V. These HEMTs also exhibited sharp pinch off, low leakage, and negligible dispersion.

  8. Corrective Action Program Guide

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    2006-03-02T23:59:59.000Z

    This Guide was developed to assist the Department of Energy (DOE) organizations and contractors in the development, implementation, and followup of corrective action programs utilizing the feedback and improvement core safety function within DOE's Integrated Safety Management System. This Guide outlines some of the basic principles, concepts, and lessons learned that DOE managers and contractors might consider when implementing corrective action programs based on their specific needs. Canceled by DOE G 414.1-2B. Does not cancel other directives.

  9. Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy Huajie Chen, Kista, Sweden Abstract Strain-compensated InGaAsP/InGaP superlattices are studied in cross- section. The strain compensated InGaAsP/InGaP/InP superlattices studied here have application for light sources

  10. AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN 1 epitaxially on AlGaN/GaN HFET structures by molecular beam epitaxy (MBE). Growth was first performed on GaN templates to establish epitaxial growth conditions. X-ray diffraction showed [001] TiO2 || [1010]GaN

  11. AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium; published 13 October 2004) Use of high-k gate dielectrics in AlGaN/GaN heterostructure field transconductance and pinchoff voltage. To achieve this, AlGaN/GaN metal-oxide-semiconductor heterostructure field

  12. In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device based on a

    E-Print Network [OSTI]

    Yang, Kyounghoon

    205 Abstract In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device basedBm at 2 GHz have been demonstrated from the fabricated device. 1. Introduction In recent years, AlGaN/GaN noise amplifier and switch. Superior results have been reported in microwave power performance of AlGaN/GaN

  13. A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design presents a new architecture for an AlGaN/GaN HEMT frequency doubler using the active integrated antenna. The antenna operates as a fundamental frequency reflector in this circuit. Using AlGaN/GaN with 1mm gate

  14. Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate,

    E-Print Network [OSTI]

    Boyer, Edmond

    Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Aristide Briand, 92.195 Meudon, France Abstract. Wide bandgap devices such as AlGaN/GaN High Electron of GR- bulges related respectively to AlGaN/GaN interface and quantum well are identified. Each GR

  15. Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2012-12-24T23:59:59.000Z

    Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

  16. NSF Proposal Preparation 101

    E-Print Network [OSTI]

    /IPAs National Science Board #12;National Science Foundation #12;NSF Web Page #12;Grant Proposal Guide (GPG be returned without review #12;GPG (cont'd) Describes process for withdrawals, returns & declinations and administration processes #12;GPG (cont'd) Details process for submission of collaborative proposals via: Issuance

  17. Doctoral school COURSE PROPOSAL

    E-Print Network [OSTI]

    Jeanjean, Louis

    Doctoral school COURSE PROPOSAL ED SPIM / Course proposal Page 1/2 2013 Title: The Web of data This course will give an overview of the principles of Linked Data along with the Web of Data, as it emerged architectures. This course also presents the concepts and definitions related to the Semantic Web (or Web

  18. Control of strain in GaN by a combination of H{sub 2} and N{sub 2} carrier gases

    SciTech Connect (OSTI)

    Yamaguchi, Shigeo; Kariya, Michihiko; Kosaki, Masayoshi; Yukawa, Yohei; Nitta, Shugo; Amano, Hiroshi; Akasaki, Isamu

    2001-06-15T23:59:59.000Z

    We study the effect of a combination of N{sub 2} and H{sub 2} carrier gases on the residual strain and crystalline properties of GaN, and we propose its application to the improvement of crystalline quality of GaN/Al{sub 0.17}Ga{sub 0.83}N multiple quantum well (MQW) structures. GaN was grown with H{sub 2} or N{sub 2} carrier gas (H{sub 2}{endash} or N{sub 2}{endash}GaN) on an AlN low-temperature-deposited buffer layer. A (0001) sapphire substrate was used. N{sub 2}{endash}GaN was grown on H{sub 2}{endash}GaN. The total thickness was set to be 1.5 {mu}m, and the ratio of N{sub 2}{endash}GaN thickness to the total thickness, x, ranged from 0 to 1. With increasing x, the tensile stress in GaN increased. Photoluminescence intensity at room temperature was much enhanced. Moreover, the crystalline quality of GaN/Al{sub 0.17}Ga{sub 0.83}N MQW was much higher when the MQW was grown with N{sub 2} on H{sub 2}{endash}GaN than when it was grown with H{sub 2} on H{sub 2}{endash}GaN. These results were due to the achievement of control of strain in GaN using a combination of N{sub 2}{endash}GaN and H{sub 2}{endash}GaN. {copyright} 2001 American Institute of Physics.

  19. High efficiency InGaP solar cells for InGaP/GaAs tandem cell application

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Kurita, H.; Ohmori, M. [Japan Energy Corp., Toda, Saitama (Japan). Central Research Lab.

    1994-12-31T23:59:59.000Z

    In this paper, high conversion efficiency single junction InGaP solar cells with n-p-p{sup +} structure are presented and their application to InGaP/GaAs monolithic tandem cells is discussed. In the InGaP cells, a best conversion efficiency of 18.48% was achieved by introducing the p{sup +} peak back surface field (BSF) layer with a high carrier concentration of 2 {times} 10{sup 18} cm{sup {minus}3}, which improved both short circuit current (Isc) and open circuit voltage (Voc). However, in the case of InGaP/GaAs tandem cells, a decrease in carrier concentration of the InGaP BSF layer, which was caused by the diffusion of Zn, was found to reduce the Isc and Voc of the tandem cell. The reduction in the carrier concentration was suppressed by using a thicker BSF layer of 0.5 {micro}m, which reduced the current density in the GaAs bottom cell. An InGaP/GaAs tandem cell with 27.3% efficiency and a high Voc of 2.418 V was obtained.

  20. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation

    E-Print Network [OSTI]

    Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phaseAs was 70% of that on bulk InP at both temperatures. To achieve this, graded buffers in the InGaAs, InGaP

  1. AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates

    E-Print Network [OSTI]

    Manfra, Michael J.

    PS-4 AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates Nils ABSTRACT Molecular Beam Epitaxy of GaN and related alloys is becoming a rival to the more established, and HVPE SI-GaN templates on sapphire. While sapphire and SI-Sic are established substrates for the growth

  2. ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    MOSCAP process ?ow: n-GaN substrate; Ohmic metallization andtion for a AlGaN/ GaN HEMT on a substrate which has a poorsapphire substrate, a well-passivated AlGaN/ GaN HEMT grown

  3. Green light emission by InGaN/GaN multiple-quantum-well microdisks

    SciTech Connect (OSTI)

    Hsu, Yu-Chi; Lo, Ikai, E-mail: ikailo@mail.phys.nsysu.edu.tw; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Tsai, Cheng-Da; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)] [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China); Hsu, Gary Z. L. [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)] [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)

    2014-03-10T23:59:59.000Z

    The high-quality In{sub x}Ga{sub 1?x}N/GaN multiple quantum wells were grown on GaN microdisks with ?-LiAlO{sub 2} substrate by using low-temperature two-step technique of plasma-assisted molecular beam epitaxy. We demonstrated that the hexagonal GaN microdisk can be used as a strain-free substrate to grow the advanced In{sub x}Ga{sub 1?x}N/GaN quantum wells for the optoelectronic applications. We showed that the green light of 566-nm wavelength (2.192?eV) emitted from the In{sub x}Ga{sub 1?x}N/GaN quantum wells was tremendously enhanced in an order of amplitude higher than the UV light of 367-nm wavelength (3.383?eV) from GaN.

  4. Proposed environmental remediation at Argonne National Laboratory, Argonne, Illinois

    SciTech Connect (OSTI)

    NONE

    1997-05-01T23:59:59.000Z

    The Department of Energy (DOE) has prepared an Environmental Assessment evaluating proposed environmental remediation activity at Argonne National Laboratory-East (ANL-E), Argonne, Illinois. The environmental remediation work would (1) reduce, eliminate, or prevent the release of contaminants from a number of Resource Conservation and Recovery Act (RCRA) Solid Waste Management Units (SWMUs) and two radiologically contaminated sites located in areas contiguous with SWMUs, and (2) decrease the potential for exposure of the public, ANL-E employees, and wildlife to such contaminants. The actions proposed for SWMUs are required to comply with the RCRA corrective action process and corrective action requirements of the Illinois Environmental Protection Agency; the actions proposed are also required to reduce the potential for continued contaminant release. Based on the analysis in the EA, the DOE has determined that the proposed action does not constitute a major federal action significantly affecting the quality of the human environment within the meaning of the National Environmental Policy Act of 1969 (NEPA). Therefore, the preparation of an Environmental Impact Statement is not required.

  5. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01T23:59:59.000Z

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  6. Tachyon Dynamics and the Effective Action Approximation

    E-Print Network [OSTI]

    N. D. Lambert; I. Sachs

    2002-09-20T23:59:59.000Z

    Recently effective actions have been extensively used to describe tachyon condensation in string theory. While the various effective actions which have appeared in the literature have very similar properties for static configurations, they differ for time-dependent tachyons. In this paper we discuss general properties of non-linear effective Lagrangians which are first order in derivatives. In particular we show that some observed properties, such as asymptotically vanishing pressure, are rather generic features, although the quantative features differ. On the other hand we argue that certain features of marginal tachyon profiles are beyond the reach of any first order Lagrangian description. We also point out that an effective action, proposed earlier, captures the dynamics of tachyons well.

  7. InGaP/GaAs and InGaAs mechanically-stacked triple-junction solar cells

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Agui, T. [Japan Energy Corp., Toda, Saitama (Japan)] [and others

    1997-12-31T23:59:59.000Z

    Triple-junction cells with AM1.5 efficiencies of over 33% have been demonstrated. A planar type InGaP/GaAs monolithic dual-junction cell was fabricated on a semi-insulating FaAs substrate, which has high infra-red transparency. Then a dual-junction cell, with efficiency of 27--28%, was mechanically stacked on an InGaAs cell fabricated on an InP substrate. The bottom InGaAs cell showed an efficiency of 6.2% under the InGaP/GaAs cell, and a total efficiency of 33--34% was achieved for the four-terminal triple-junction cell.

  8. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20T23:59:59.000Z

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  9. Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

    SciTech Connect (OSTI)

    Roul, Basanta; Kumar, Mahesh [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Rajpalke, Mohana K.; Bhat, Thirumaleshwara N.; Krupanidhi, S. B. [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Kalghatgi, A. T. [Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Kumar, Nitesh; Sundaresan, A. [Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bangalore 560064 (India)

    2011-10-17T23:59:59.000Z

    We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm{sup -1} in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy.

  10. LANSCE | User Resources | Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    pm (MDT). PAC: June 4 and 5, 2015. lansce.lanl.gov wnr.lanl.gov The Los Alamos Neutron Science Center (LANSCE) is issuing a Call for Proposals for the WNR facility for run cycle...

  11. Probing the structure of the N=Z=31 nucleus {sub 31}{sup 62}Ga

    SciTech Connect (OSTI)

    Vincent, S. M.; Regan, P. H.; Gelletly, W.; Pearson, C. J. [Department of Physics, University of Surrey, Guildford GU2 5XH (United Kingdom); Warner, D. D.; Simpson, J. [CCLRC Daresbury Laboratory, Warrington, WA4 4AD (United Kingdom); Bark, R.; Saitoh, T. [Niels Bohr Institute Tandem Accelerator Laboratory, Risoe, DK-4000, Roskilde (Denmark); Blumenthal, D.; Carpenter, M. P.; Davids, C. N.; Henderson, D. J.; Janssens, R. V. F.; Lister, C. J.; Nisius, D.; Seweryniak, D. [Argonne National Laboratory, 9700 South Cass Ave, Illinois 60439 (United States); O'Leary, C. D. [School of Sciences, Staffordshire University, Stoke-on-Trent, ST4 2DE (United Kingdom); Schwartz, J. [Argonne National Laboratory, 9700 South Cass Ave, Illinois 60439 (United States); A. W. Wright Nuclear Structure Laboratory, Yale University, New Haven, Connecticut 06511 (United States); Toermaenen, S. [Niels Bohr Institute Tandem Accelerator Laboratory, Risoe, DK-4000, Roskilde (Denmark); Department of Physics, University of Jyvaekylae, Jyvaekylae (Finland)

    1998-12-21T23:59:59.000Z

    The decay scheme of the N=Z odd-odd nucleus, {sup 62}Ga has been deduced for the first time using the reactions {sup 40}Ca({sup 24}Mg,pn){sup 62}Ga and {sup 40}Ca({sup 28}Si,{alpha}pn){sup 62}Ga at beam energies of 65 MeV and 88 MeV respectively. Transitions from excited states in {sup 62}Ga were identified using the PEX apparatus at the Niels Bohr Institute Tandem Accelerator Laboratory. Gamma ray angular correlation data collected using the AYEBALL array at the Argonne National Laboratory are consistent with a cascade of stretched E2 transitions which decay from a spin 1{sup +} bandhead via a pure magnetic dipole decay, directly linking a proposed T=0 structure with the T=1, J{sup {pi}}=0{sup +} ground state.

  12. DOE Withdraws Proposed Rulemaking (Test Procedure) and Proposed...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    DOE Withdraws Proposed Rulemaking (Test Procedure) and Proposed Coverage Determination (Energy Conservation Standard) for Set-Top Boxes DOE Withdraws Proposed Rulemaking (Test...

  13. Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2007-02-01T23:59:59.000Z

    The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

  14. September 16-21, 2007 Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN as etch-stop layer

    E-Print Network [OSTI]

    Pala, Nezih

    0 2 V(V) C(pF) Before etching (material) After etching (device) G AlGaN substrate i-GaN DS AlN AlGaN substrate AlN i-GaN AlGaN S G DAlGaNAlGaN InGaNInGaN Standard gate recess InGaN stop layer gate recess InGaNICNS 7 September 16-21, 2007 ­ Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN

  15. Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen

    E-Print Network [OSTI]

    York, Robert A.

    Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen Materials Department March 2005 Titanium dioxide TiO2, with the rutile structure was grown on 0001 oriented GaN and 0001 Al0.33Ga0.67N/GaN heterostructure field effect transistor HFET structures by molecular beam epitaxy. X

  16. Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells

    E-Print Network [OSTI]

    Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN based on radial p­i­n multi quantum well (QW) junctions have been realized from GaN wires grown by catalyst- free metal organic vapor phase epitaxy. The Inx Ga1Àx N/GaN undoped QW system is coated over both

  17. High density plasma damage in InGaP/GaAs as AlGaAs/GaAs high electron mobility transistors

    SciTech Connect (OSTI)

    Lee, J.W.; Pearton, S.J. [Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering; Ren, F.; Kopf, R.F.; Kuo, J.M. [Bell Labs., Murray Hill, NJ (United States). Lucent Technologies; Shul, R.J. [Sandia National Labs., Albuquerque, NM (United States); Constantine, C.; Johnson, D. [Plasma-Therm Inc., St. Petersburg, FL (United States)

    1998-11-01T23:59:59.000Z

    The introduction of plasma damage in InGaP/GaAs and AlGaAs/GaAs high electron mobility transistors (HEMTs) has been investigated using both inductively coupled plasma and electron cyclotron resonance Ar discharges. The saturated drain-source current is found to be decreased through introduction of compensating deep levels into the InGaP or AlGaAs donor layer. The degradation of device performance is a strong function of ion energy and ion flux, and an advantage of both high density plasma tools is that ion energy can be reduced by increasing the plasma density. Increasing process pressure and source power, and decreasing radio-frequency chuck power produce the lowest amounts of plasma damage in HEMTs.

  18. Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates

    E-Print Network [OSTI]

    Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates, around 104 cm-2 . The structures, grown on GaP or GaAs, consist of graded In-fraction InGaP and AlInGaP. High surface roughness and branch defects in Al InGaP lead to the lowest quality virtual substrates we

  19. Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method

    E-Print Network [OSTI]

    Okamoto, Koichi

    Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method; 78.55.Cr; 78.67.De; S7.14 Carrier dynamics in GaN and InGaN/GaN SQW structures were observed by using inhomogeneity of In composition. Recently, InGaN/GaN-based light emitting diodes (LEDs) have been commercialized

  20. On Superconnections and the Tachyon Effective Action

    E-Print Network [OSTI]

    Alishahiha, M; Oz, Y; Alishahiha, Mohsen; Ita, Harald; Oz, Yaron

    2001-01-01T23:59:59.000Z

    We propose a form of the effective action of the tachyon and gauge fields for brane-antibrane systems and non-BPS Dp-branes, written in terms of the supercurvature. Kink and vortex solutions with constant infinite gauge field strength reproduce the exact tensions of the lower-dimensional D-branes. We discuss the relation to BSFT and other models in the literature.

  1. On Superconnections and the Tachyon Effective Action

    E-Print Network [OSTI]

    Mohsen Alishahiha; Harald Ita; Yaron Oz

    2000-12-22T23:59:59.000Z

    We propose a form of the effective action of the tachyon and gauge fields for brane-antibrane systems and non-BPS Dp-branes, written in terms of the supercurvature. Kink and vortex solutions with constant infinite gauge field strength reproduce the exact tensions of the lower-dimensional D-branes. We discuss the relation to BSFT and other models in the literature.

  2. N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

    E-Print Network [OSTI]

    Chung, Jinwook

    We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier ...

  3. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of InGaNGaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture Development and Industrialization of InGaNGaN LEDs on Patterned Sapphire...

  4. Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate

    E-Print Network [OSTI]

    Lu, Bin

    AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for power electronics applications. Despite the low cost of the Si substrate, the breakdown voltage (V[subscript ...

  5. Unsolicited Proposals | Department of Energy

    Energy Savers [EERE]

    Unsolicited Proposals Unsolicited Proposals The Department of Energy's (DOE's) central point of receipt for all Unsolicited Proposals is the National Energy Technology Laboratory...

  6. Siemens Pittsburgh, PA Novelis Corporation Atlanta, GA

    E-Print Network [OSTI]

    McGaughey, Alan

    Industrial Design ­ Shanghai, China Eaton Corporation ­ Pittsburgh, PA CMU, CTTEC ­ PittsburghSiemens ­ Pittsburgh, PA Novelis Corporation ­ Atlanta, GA Expense

  7. A proposed gravitodynamic theory

    E-Print Network [OSTI]

    T. Chang

    1997-03-18T23:59:59.000Z

    This paper proposes a gravitodynamic theory because there are similarities between gravitational theory and electrodynamics. Based on Einstein's principle of equivalence, two coordinate conditions are proposed into the four-dimensional line element and transformations. As a consequence,the equation of motion for gravitational force or inertial force has a form similar to the equation of Lorentz force on a charge in electrodynamics. The inertial forces in auniformly rotating system are calculated, which show that the Coriolis force is produced by a magnetic-type gravitational field. We have also calculated the Sagnac effect due to the rotation. These experimental facts strongly support our proposed coordinate conditions. In addition, the gravitodynamic field equations are briefly discussed. Since only four gravitational potentials (3 + 1 split) enter the metric tensor, the gravitodynamic field equations in ``3+1 split" form would be analogous to Maxwell's equations.

  8. Strain-balanced InGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Van Den Broeck, D. M.; Hosalli, A. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-07-21T23:59:59.000Z

    InGaN/GaN multiple quantum well (MQW) structures suffer from a high amount of compressive strain in the InGaN wells and the accompanied piezoelectric field resulting in both a blue shift in emission and a reduction of emission intensity. We report the growth of In{sub x}Ga{sub 1?x}N/GaN “strain-balanced” multiple quantum wells (SBMQWs) grown on thick In{sub y}Ga{sub 1?y}N templates for x?>?y by metal organic chemical vapor deposition. SBMQWs consist of alternating layers of In{sub x}Ga{sub 1?x}N wells and GaN barriers under compressive and tensile stress, respectively, which have been lattice matched to a thick In{sub y}Ga{sub 1?y}N template. Growth of the In{sub y}Ga{sub 1?y}N template is also detailed in order to achieve thick, relaxed In{sub y}Ga{sub 1?y}N grown on GaN without the presence of V-grooves. When compared to conventional In{sub x}Ga{sub 1?x}N/GaN MQWs grown on GaN, the SBMQW structures exhibit longer wavelength emission and higher emission intensity for the same InN mole fraction due to a reduction in the well strain and piezoelectric field. By matching the average lattice constant of the MQW active region to the lattice constant of the In{sub y}Ga{sub 1?y}N template, essentially an infinite number of periods can be grown using the SBMQW growth method without relaxation-related effects. SBMQWs can be utilized to achieve longer wavelength emission in light emitting diodes without the use of excess indium and can be advantageous in addressing the “green gap.”.

  9. High current gain InGaN=GaN HBTs with C operating temperature

    E-Print Network [OSTI]

    Asbeck, Peter M.

    with an $20 nm low-temperature (Tg ¼ 550 C) GaN buffer layer on a (0001) sapphire substrate. The layer 1018 cmÀ3 Buffer GaN 2.5 mm ­ Substrate Sapphire ­ ­ HBT device processing began by depositing a 100 nmHigh current gain InGaN=GaN HBTs with 300 C operating temperature D.M. Keogh, P.M. Asbeck, T. Chung

  10. CLOSEOUT REPORT REMEDIAL ACTION

    E-Print Network [OSTI]

    FINAL CLOSEOUT REPORT REMEDIAL ACTION AREA OF CONCERN 6 BUILDING 650 RECLAMATION FACILITY SUMP York 11973 REGISTERED TO ISO 14001 #12;AOC 6 BUILDING 650 RECLAMATION FACILITY SUMP AND SUMP OUTFALL .................................................................................9 2.6.1 Final Radiological Status Survey Design

  11. Conjugate flow action functionals

    SciTech Connect (OSTI)

    Venturi, Daniele, E-mail: daniele-venturi@brown.edu [Division of Applied Mathematics, Brown University, Rhode Island 02912 (United States)] [Division of Applied Mathematics, Brown University, Rhode Island 02912 (United States)

    2013-11-15T23:59:59.000Z

    We present a new general framework to construct an action functional for a non-potential field theory. The key idea relies on representing the governing equations relative to a diffeomorphic flow of curvilinear coordinates which is assumed to be functionally dependent on the solution field. Such flow, which will be called the conjugate flow, evolves in space and time similarly to a physical fluid flow of classical mechanics and it can be selected in order to symmetrize the Gâteaux derivative of the field equations with respect to suitable local bilinear forms. This is equivalent to requiring that the governing equations of the field theory can be derived from a principle of stationary action on a Lie group manifold. By using a general operator framework, we obtain the determining equations of such manifold and the corresponding conjugate flow action functional. In particular, we study scalar and vector field theories governed by second-order nonlinear partial differential equations. The identification of transformation groups leaving the conjugate flow action functional invariant could lead to the discovery of new conservation laws in fluid dynamics and other disciplines.

  12. Action Plan Materials Science

    E-Print Network [OSTI]

    Fitze, Patrick

    sense, including all strata) has available to it a wide range of con- venient products which improve, improving companies' pros- pects and generating wealth without harming the environment. And allAction Plan 2010-2013 Materials Science Area EXECUTIVE SUMMARY #12;N.B.: If you require any further

  13. OSQAR-CHASE Proposal

    E-Print Network [OSTI]

    (Pugnat, P; (Sulc, M

    2015-01-01T23:59:59.000Z

    For 2015, the OSQAR collaboration will focus on a new proposal for the search of chameleon, a hypothetical scalar particle postulated as a dark energy candidate with an environment-dependant mass. The required experimental set-up has been successfully tested and validated in 2014 at the SM-18 experimental hall. This proposal will focus on the sensitivity that can be reached during the OSQAR chameleon run in 2015 as well as to possible upgrade phases of the experiment for the coming years.

  14. Proposal Study Panels

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible forPortsmouth/Paducah47,193.70 HgPromising Magnesium BatteryProposal ProcessProposal

  15. Proposal Study Panels

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible forPortsmouth/Paducah47,193.70 HgPromising Magnesium BatteryProposalProposal Study Panels

  16. Proposal Study Panels

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible forPortsmouth/Paducah47,193.70 HgPromising Magnesium BatteryProposalProposal Study

  17. IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, VOL. 21, NO. 3, JUNE 2011 2529 Development of a Multifilament PIT V3GaConductor

    E-Print Network [OSTI]

    . The prospect of sustainable fusion technology has spurred projects like the International Thermonuclear Ex of a Multifilament PIT V3GaConductor for Fusion Applications J. S. Distin, L. R. Motowidlo, P. J. Lee, D. C on V3Gaassert its suitability for use in proposed fusion reactors. V3Ga may outperform Nb3Sn

  18. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  19. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  20. Thermoelectric characteristic of the rough InN/GaN core-shell nanowires

    SciTech Connect (OSTI)

    Wu, Chao-Wei; Wu, Yuh-Renn, E-mail: yrwu@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

    2014-09-14T23:59:59.000Z

    An analysis to model the thermoelectric (TE) effects of the rough InN/GaN core-shell nanowires (NWs) with wire diameter ranging from 25?nm to 100?nm is proposed. The elastic continuum model is employed to calculate the phonon dispersion relation curves and the related phonon group velocity. Within the framework of Boltzmann transport equations and relaxation time approximation, the electrical conductivity, Seebeck coefficient, electronic thermal conductivity, and the lattice thermal conductivity is obtained. Simulation results indicate that TE properties of the rough InN/GaN core-shell NWs are strongly affected by the surface roughness and the diameter of NWs. The optimized condition of the proposed rough InN/GaN core-shell TE NWs is studied in this paper and the highest ZT obtained in the calculation is 0.8598 at 300?K and 1.713 at 1000?K.

  1. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01T23:59:59.000Z

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  2. Proposed Drill Sites

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Lane, Michael

    Proposed drill sites for intermediate depth temperature gradient holes and/or deep resource confirmation wells. Temperature gradient contours based on shallow TG program and faults interpreted from seismic reflection survey are shown, as are two faults interpreted by seismic contractor Optim but not by Oski Energy, LLC.

  3. PROPOSED RESIDENTIAL ALTERNATIVE CALCULATION

    E-Print Network [OSTI]

    PROPOSED RESIDENTIAL ALTERNATIVE CALCULATION MANUAL (ACM) APPROVAL METHOD for the 2013 2012 CEC400201200715DAY #12;201308 Residential ACM Approval Manual 2-2 1. Overview Minimum Modeling Capabilities 1. Overview This Manual explains the requirements for approval of residential Alternative

  4. Proposed Drill Sites

    SciTech Connect (OSTI)

    Lane, Michael

    2013-06-28T23:59:59.000Z

    Proposed drill sites for intermediate depth temperature gradient holes and/or deep resource confirmation wells. Temperature gradient contours based on shallow TG program and faults interpreted from seismic reflection survey are shown, as are two faults interpreted by seismic contractor Optim but not by Oski Energy, LLC.

  5. Corrective Action Plan for Corrective Action Unit 417: Central Nevada Test Area Surface, Nevada

    SciTech Connect (OSTI)

    K. Campbell

    2000-04-01T23:59:59.000Z

    This Corrective Action Plan provides methods for implementing the approved corrective action alternative as provided in the Corrective Action Decision Document for the Central Nevada Test Area (CNTA), Corrective Action Unit (CAU) 417 (DOE/NV, 1999). The CNTA is located in the Hot Creek Valley in Nye County, Nevada, approximately 137 kilometers (85 miles) northeast of Tonopah, Nevada. The CNTA consists of three separate land withdrawal areas commonly referred to as UC-1, UC-3, and UC-4, all of which are accessible to the public. CAU 417 consists of 34 Corrective Action Sites (CASs). Results of the investigation activities completed in 1998 are presented in Appendix D of the Corrective Action Decision Document (DOE/NV, 1999). According to the results, the only Constituent of Concern at the CNTA is total petroleum hydrocarbons (TPH). Of the 34 CASs, corrective action was proposed for 16 sites in 13 CASs. In fiscal year 1999, a Phase I Work Plan was prepared for the construction of a cover on the UC-4 Mud Pit C to gather information on cover constructibility and to perform site management activities. With Nevada Division of Environmental Protection concurrence, the Phase I field activities began in August 1999. A multi-layered cover using a Geosynthetic Clay Liner as an infiltration barrier was constructed over the UC-4 Mud Pit. Some TPH impacted material was relocated, concrete monuments were installed at nine sites, signs warning of site conditions were posted at seven sites, and subsidence markers were installed on the UC-4 Mud Pit C cover. Results from the field activities indicated that the UC-4 Mud Pit C cover design was constructable and could be used at the UC-1 Central Mud Pit (CMP). However, because of the size of the UC-1 CMP this design would be extremely costly. An alternative cover design, a vegetated cover, is proposed for the UC-1 CMP.

  6. Fine structure of Fe-Co-Ga and Fe-Cr-Ga alloys with low Ga content

    SciTech Connect (OSTI)

    Kleinerman, Nadezhda M., E-mail: kleinerman@imp.uran.ru; Serikov, Vadim V., E-mail: kleinerman@imp.uran.ru; Vershinin, Aleksandr V., E-mail: kleinerman@imp.uran.ru; Mushnikov, Nikolai V., E-mail: kleinerman@imp.uran.ru; Stashkova, Liudmila A., E-mail: kleinerman@imp.uran.ru [Institute of Metal Physics UB RAS, S. Kovalevskaya str. 18, 620990 Ekaterinburg (Russian Federation)

    2014-10-27T23:59:59.000Z

    Investigation of Ga influence on the structure of Fe-Cr and Fe-Co alloys was performed with the use of {sup 57}Fe Mössbauer spectroscopy and X-ray diffraction methods. In the alloys of the Fe-Cr system, doping with Ga handicaps the decomposition of solid solutions, observed in the binary alloys, and increases its stability. In the alloys with Co, Ga also favors the uniformity of solid solutions. The analysis of Mössbauer experiments gives some grounds to conclude that if, owing to liquation, clusterization, or initial stages of phase separation, there exist regions enriched in iron, some amount of Ga atoms prefer to enter the nearest surroundings of iron atoms, thus forming binary Fe-Ga regions (or phases)

  7. TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer

    SciTech Connect (OSTI)

    Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

    2008-01-01T23:59:59.000Z

    It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

  8. Excitonic properties of strained wurtzite and zinc-blende GaNAlxGa1xN quantum dots

    E-Print Network [OSTI]

    Fonoberov, Vladimir

    Excitonic properties of strained wurtzite and zinc-blende GaNÕAlxGa1ÀxN quantum dots Vladimir A 2003 We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite WZ of GaN QDs.1­8 Molecu- lar beam epitaxial growth in the Stranski­Krastanov mode of wurtzite WZ Ga

  9. Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices

    E-Print Network [OSTI]

    Feenstra, Randall

    Morphological and compositional variations in strain- compensated InGaAsP/InGaP superlattices R of Technology, Kista, Sweden Abstract We have investigated the properties of strain-compensated InGaAsP/In- GaP superlattices, grown by metalorganic vapor phase epitaxy, with and without InP interlayers inserted in the InGaP

  10. Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1

    E-Print Network [OSTI]

    Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1 , Kristian of GaAs based self-aligned lasers based upon a single overgrowth. A lattice matched n-doped InGaP layer were exposed to oxygen. True buried heterostructures devices utilising InGaP clad- ding layers have

  11. Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates

    E-Print Network [OSTI]

    Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates M. J of unconventional alloys of InGaP with In fraction of 0.2­0.4 grown on fully relaxed GaAsP virtual substrates demonstrate growth of extremely high quality InGaP heterostructures which hold promise for fabrication

  12. Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M Abstract Scanning tunneling microscopy and spectroscopy are used to study InGaP/GaAs heterojunctions computation of the tunnel current. Curve fitting of theory to experiment is performed. Using an InGaP band gap

  13. Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1

    E-Print Network [OSTI]

    Dietz, Nikolaus

    Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1 G. Ariyawansa,1 online 2 September 2009 A study of trap states in n+ -GaN/AlGaN heterostructures using electrical related absorption centers attributed to shallow Si-donor pinned to the AlGaN barrier , N-vacancy/ C

  14. High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop

    E-Print Network [OSTI]

    Itoh, Tatsuo

    High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop amplifier module using AlGaN/GaN high electron mobility transistor (HEMT) has been developed that covers radars and communications systems. GaN-based HEMT's for high power applications at microwave frequencies

  15. GaN directional couplers for integrated quantum photonics

    E-Print Network [OSTI]

    Yanfeng Zhang; Loyd McKnight; Erman Engin; Ian M. Watson; Martin J. Cryan; Erdan Gu; Mark G. Thompson; Stephane Calvez; Jeremy L. O'Brien; Martin D. Dawson

    2012-02-20T23:59:59.000Z

    Large cross-section GaN waveguides are proposed as a suitable architecture to achieve integrated quantum photonic circuits. Directional couplers with this geometry have been designed with aid of the beam propagation method and fabricated using inductively coupled plasma etching. Scanning electron microscopy inspection shows high quality facets for end coupling and a well defined gap between rib pairs in the coupling region. Optical characterization at 800 nm shows single-mode operation and coupling-length-dependent splitting ratios. Two photon interference of degenerate photon pairs has been observed in the directional coupler by measurement of the Hong-Ou-Mandel dip with 96% visibility.

  16. Corrective Action Investigation Plan for Corrective Action Unit...

    Office of Scientific and Technical Information (OSTI)

    Plan for Corrective Action Unit 541: Small Boy Nevada National Security Site and Nevada Test and Training Range, Nevada Re-direct Destination: Corrective Action Unit (CAU) 541 is...

  17. Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Uren, M. J.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Keller, S.; Kolluri, S.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of Santa Barbara California, Santa Barbara, California 93106 (United States)

    2014-08-11T23:59:59.000Z

    The existence of impact ionization as one of the open questions for GaN device reliability was studied in N-polar AlGaN/GaN high electron mobility transistors. Electroluminescence (EL) imaging and spectroscopy from underneath the device gate contact revealed the presence of hot electrons in excess of the GaN bandgap energy even at moderate on-state bias conditions, enabling impact ionization with hole currents up to several hundreds of pA/mm. The detection of high energy luminescence from hot electrons demonstrates that EL analysis is a highly sensitive tool to study degradation mechanisms in GaN devices.

  18. Michael J. Poston Atlanta, GA 30307

    E-Print Network [OSTI]

    Orlando, Thomas

    Page | 1 Michael J. Poston Atlanta, GA 30307 Michael.Poston@gatech.edu Cell: 770.561.4756 U.S. Citizen Education PhD Candidate in Chemistry Georgia Institute of Technology, Atlanta, GA August 2007 with Application to Lunar Observations," JGR ­ Planets, 118, 105, doi: 10.1002/jgre.20025. Poston, M. J

  19. Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor

    E-Print Network [OSTI]

    Peale, Robert E.

    of materials systems such as GaAs/AlGaAs,3 InGaP/InGaAs/GaAs,4 GaN/AlGaN,2,5 and Si Ref. 1 have been explored

  20. Li Reaction Behavior of GaP Nanoparticles Prepared by a Sodium Naphthalenide Reduction Method

    E-Print Network [OSTI]

    Cho, Jaephil

    chemistry.1-21 Cheon et al. recently synthesized wurtzite and zinc blende structured GaP nanorods.1 to the wurtzite structure. They proposed that the formation of a zinc blende structure was favored with highly steric ligands, such as trioctylamine, while wurtzite was dominant when a less bulky alkyl amine was used

  1. FUPWG Meeting Agenda - Atlanta, GA | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA Energy on My Mind FUPWG Atlanta, GA May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta,...

  2. SAVEnergy Action Plans

    SciTech Connect (OSTI)

    Mayo, K.; Westby, R. [National Renewable Energy Lab., Golden, CO (United States)] [National Renewable Energy Lab., Golden, CO (United States); deMonsabert, S. [George Mason Univ., Fairfax, VA (United States)] [George Mason Univ., Fairfax, VA (United States); Ginsberg, M. [USDOE, Washington, DC (United States)] [USDOE, Washington, DC (United States)

    1994-04-01T23:59:59.000Z

    The Department of Energy`s Federal Energy Management Program (FEMP) is charged with carrying out key sections of EPACT and Executive Order 12903, to make the Federal government operate more efficiently. A congressionally mandated energy and water conservation audit program is one component of this growing DOE program. This paper traces the SAVEnergy Action Plan program throughout its development from (1) identifying projects and Agency champions, (2) establishing a protocol and fitting auditors into the program, (3) developing a data base to track the audits and measure their success, and (4) evaluating the process, learning from mistakes, and charting and transferring successes. A major tenet of the SAVEnergy program is to proactively prescreen all audit activities to ensure that -- where audits are done and Action Plans completed -- projects will be done.

  3. Proposed SOLCOST maintenance activities

    SciTech Connect (OSTI)

    none,

    1980-01-01T23:59:59.000Z

    This document provides a short description of work that has been accomplished to date and work in progress. A discussion of the program status as it is currently configured follows and finally proposed work by Solar Environmental Engineering Company (SEEC) in its most recently signed contract with the Department of Energy (DOE) is given. Early statements are designed to give the reader a good background so that the suggested SOLCOST maintenance activities will be more easily understood.

  4. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Fujioka, H., E-mail: hfujioka@iis.u-tokyo.ac.jp [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); CREST, Japan Science and Technology Corporation (JST), 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 (Japan)

    2014-05-05T23:59:59.000Z

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3?×?10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  5. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar bandgap range. Index Terms--Epitaxy, GaAsP, InGaP, metamorphic. I. INTRODUCTION TODAY'S highest efficiency

  6. Environmental assessment of remedial action at the Maybell Uranium Mill Tailings Site near Maybell, Colorado. Revision 1

    SciTech Connect (OSTI)

    Not Available

    1994-04-01T23:59:59.000Z

    The purpose of this environmental assessment (EA) is to evaluate the environmental impacts resulting from remedial action at the Maybell uranium mill tailings site near Maybell, Colorado. A biological assessment (Attachment 1) and a floodplain/wetlands attachments describe the proposed action, affected environment, and environmental impacts associated with the proposed remedial action, including impacts to threatened and endangered species listed or proposed for listing by the US Fish and Wildlife Service (FWS).

  7. Environmental assessment of remedial action at the Maybell uranium mill tailings site near Maybell, Colorado: Revision 2

    SciTech Connect (OSTI)

    Not Available

    1994-11-01T23:59:59.000Z

    The purpose of this environmental assessment (EA) is to evaluate the environmental impacts resulting from remedial action at the Maybell uranium mill tailings site near Maybell, Colorado. A biological assessment and a floodplain/wetlands assessment are included as part of this EA. This report and attachments describe the proposed action, affected environment, and environmental impacts associated with the proposed remedial action, including impacts to threatened and endangered species listed or proposed for listing by the US Fish and Wildlife Service (FWS).

  8. Defect structures in rapidly degraded InGaAsP/InGaP double-heterostructure lasers

    SciTech Connect (OSTI)

    Ueda, O.; Wakao, K.; Yamaguchi, A.; Isozumi, S.; Komiya, S.

    1985-03-01T23:59:59.000Z

    Rapidly degraded InGaAsP/InGaP double-heterostructure lasers grown on (001)-oriented GaAs substrates by liquid phase epitaxy have been investigated by photolumi

  9. Climate Action Plan (Manitoba, Canada)

    Broader source: Energy.gov [DOE]

    Manitoba's Climate Action Plan centers around energy efficiency, although it includes mandates and initiatives for renewable sources of energy.

  10. Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well

    SciTech Connect (OSTI)

    Zvonkov, B. N.; Nekorkin, S. M.; Vikhrova, O. V.; Dikareva, N. V., E-mail: dikareva@nifti.unn.ru [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

    2013-09-15T23:59:59.000Z

    The specific features of the emission characteristics of GaAs-based heterostructures with a GaAs{sub 1-x}Sb{sub x}-In{sub y}Ga{sub 1-y}As bilayer quantum well are studied. The heterostructures are grown by metal-organic chemical vapor deposition (MOCVD). With an analysis of previously reported data on the MOCVD growth process taken into account, the temperature range (560-580 Degree-Sign C), the relation between the fluxes emitted by the sources of Group-V and -III elements ( Less-Than-Or-Equivalent-To 1), and the order of layer growth for the production of the active region of a GaAs/InGaP laser heterostructure are determined experimentally. The active region is a GaAs{sub 0.75}Sb{sub 0.25}-In{sub 0.2}Ga{sub 0.8}As bilayer quantum well. For the structure, a 1075-nm electroluminescence signal attributed to indirect transitions between the valence band of the GaAs{sub 0.75}Sb{sub 0.25} layer and the conduction band of the In{sub 0.2}Ga{sub 0.8}As layer is observed. An increase in the continuous-wave pump current yields a decrease in the 1075-nm emission intensity and initiates stable lasing at a wavelength of 1022 nm at a threshold current density of 1.4 kA cm{sup -2} at room temperature. Lasing occurs at transitions direct in coordinate space.

  11. Road Map Team Proposal Form Proposal: RR7

    E-Print Network [OSTI]

    Suzuki, Masatsugu

    Road Map Team Proposal Form Proposal: RR7 1: Road Map Team Name: Rankings and Reputation 1b: Team Theme Name: Create Increase Brand Visibility of our team's proposal to increase the consistency and visibility

  12. AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh

    E-Print Network [OSTI]

    Itoh, Tatsuo

    AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh Department-mail: ykchung@ee.ucla.edu Abstract - This paper presents the first single-ended AlGaN/GaN heterojunction field, respectively. For the frequency doubler with 1mm gate periphery AlGaN/GaN HFET, conversion gain of 0.17 d

  13. Materials Science and Engineering B59 (1999) 319322 Microcalorimetric absorption spectroscopy in GaNAlGaN

    E-Print Network [OSTI]

    Nabben, Reinhard

    1999-01-01T23:59:59.000Z

    Microcalorimetric measurements of small absorption coefficients have been performed on thin GaN­AlGaN quantum wells in GaN­AlGaN quantum wells Axel Go¨ldner a, *, Axel Hoffmann a , Bernard Gil b , Pierre Lefebvre b at the energy of the GaN buffer and at the energy of the thick AlGaN barrier layers, we could also readily

  14. Al fraction induced effects on the capacitance characteristics -GaN/AlxGa1-xN IR detectors

    E-Print Network [OSTI]

    Dietz, Nikolaus

    substrate. As shown in Fig. 1(a), the device structures consist of a 0.2 m n+ -GaN top contact (emitter.1117/12.828156 Proc. of SPIE Vol. 7467 74670W-1 #12;(a) Sapphire Substrate n GaN Bottom Contact AlxGa1-xN Barrier n GaNAl fraction induced effects on the capacitance characteristics of n+ -GaN/AlxGa1-xN IR detectors

  15. Improvement of breakdown voltage in InGaP/InGaAs/GaAs heterostructure MESFETs for MMICs

    SciTech Connect (OSTI)

    Koh, Inoue; Yamane, Yasuro; Shiojima, Kenji [NTT LSI Lab., Kanagawa (Japan)] [and others

    1995-12-31T23:59:59.000Z

    This paper describes the trade-off between breakdown voltage and RF performance of InGaP/InGaAs/GaAs heterostructure MESFETs for power amplifiers and oscillators in multi-function MMICs in the millimeter-wave range. The authors successfully improved both gate-drain and drain-source breakdown voltages while maintaining excellent high-frequency performance by using a double-layered gate consisting of WSiN with different nitrogen contents, and by varying epitaxial layer thickness and implantation dose.

  16. On the Modified Palatini Action Coupled to Fermionic Matter

    SciTech Connect (OSTI)

    Lagraa, Meriem Hadjer [Laboratoire de Physique Theorique d'Oran, Universite d'Oran, 311000 Es-Senia (Algeria)

    2010-10-31T23:59:59.000Z

    From the generalized Palatini's action proposed recently in [1], we show that we can obtain the standard effective action of the theory of Einstein-Cartan coupled to the fermionic matter without the usual current-current interaction. Therefore, an effective action which is free from the Barbero-Immirzi parameter [2] and the non-vanishing torsion resulting from the presence of the minimal coupling of fermionic matter. This establishes the equivalence between the theories of general relativity and Einstein-Cartan minimally coupled to fermions [3].

  17. Standards Actions, May 2001

    Broader source: Energy.gov (indexed) [DOE]

    Standards are proposed for reaffirmation: * DOE-HDBK-1081-94, Primer on Spontaneous Heating and Pyrophoricity, Decem- ber 1994. * DOE-STD-1027-92, including Change Notice 1,...

  18. Sodium dichromate expedited response action assessment

    SciTech Connect (OSTI)

    Not Available

    1993-09-01T23:59:59.000Z

    The US Environmental Protection Agency (EPA) and Washington Department of Ecology (Ecology) recommended that the US Department of Energy (DOE) perform an expedited response action (ERA) for the Sodium Dichromate Barrel Disposal Landfill. The ERA lead regulatory agency is Ecology and EPA is the support agency. The ERA was categorized as non-time-critical, which required preparation of an engineering evaluation and cost analysis (EE/CA). The EE/CA was included in the ERA proposal. The EE/CA is a rapid, focused evaluation of available technologies using specific screening factors to assess feasibility, appropriateness, and cost. The ERA goal is to reduce the potential for any contaminant migration from the landfill to the soil column, groundwater, and Columbia River. Since the Sodium Dichromate Barrel Disposal Landfill is the only waste site within the operable unit, the removal action may be the final remediation of the 100-IU-4 Operable Unit. This ERA process started in March 1992. The ERA proposal went through a parallel review process with Westinghouse Hanford Company (WHC), DOE Richland Operations (RL), EPA, Ecology, and a 30-day public comment period. Ecology and EPA issued an Action Agreement Memorandum in March 1993 (Appendix A). The memorandum directed excavation of all anomalies and disposal of the collected materials at the Hanford Site Central Landfill. Primary field activities were completed by the end of April 1993. Final waste disposal of a minor quantity of hazardous waste was completed in July 1993.

  19. Categories for IGPPS Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisiting the TWPSuccess StoriesFebruaryMetal nanoparticles supported on theProposal

  20. Proposal Study Panels

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC)IntegratedSpeedingTechnical News,Program DirectionProjectPromiseProperty -Proposal

  1. Proposal Study Panels

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC)IntegratedSpeedingTechnical News,Program DirectionProjectPromisePropertyProposal Study

  2. General User Proposals (GUPs)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power AdministrationField8,Dist.Newof EnergyFundingGene ControlsCounselGeneral User Proposals

  3. Proposal Study Panels

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible forPortsmouth/Paducah47,193.70 HgPromising Magnesium BatteryProposal Process

  4. Proposal Study Panels

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible forPortsmouth/Paducah47,193.70 HgPromising Magnesium BatteryProposal

  5. Road Map Team Proposal Form Proposal: CAR29

    E-Print Network [OSTI]

    Suzuki, Masatsugu

    Road Map Team Proposal Form Proposal: CAR29 1: Road Map Team Name, such as solar energy and fuel cell technologies, energy storage methods and improved

  6. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

    2011-01-07T23:59:59.000Z

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  7. Necessity of Ga prelayers in GaAs/Ge growth using gas-source molecular beam epitaxy

    E-Print Network [OSTI]

    in a highly defective GaAs layer.as5 Recently, InGaP light-emitting diodes have been fabricated on Si using

  8. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Liu, Wei; Ju, Zhengang; Tan, Swee Tiam; Ji, Yun; Kyaw, Zabu; Zhang, Xueliang; Wang, Liancheng; Sun, Xiao Wei, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Demir, Hilmi Volkan, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey)

    2014-07-21T23:59:59.000Z

    In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate the quantum confined Stark effect (QCSE), caused due to strong polarization induced electric field, through spatially confining electrons and holes in small recombination volumes. However, this inevitably increases the carrier density in quantum wells, which in turn aggravates the Auger recombination, since the Auger recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells with the InN composition linearly grading along the growth orientation in LED structures suppressing the Auger recombination and the QCSE simultaneously. Theoretically, the physical mechanisms behind the Auger recombination suppression are also revealed. The proposed LED structure has experimentally demonstrated significant improvement in optical output power and efficiency droop, proving to be an effective solution to this important problem of Auger recombination.

  9. High-efficiency radiation-resistant InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Takamoto, T. [Toyota Technological Inst., Tempaku, Nagoya (Japan); [Japan Energy Corp., Toda, Saitama (Japan); Yamaguchi, M.; Taylor, S.J. [Toyota Technological Inst., Tempaku, Nagoya (Japan); Ikeda, E.; Agui, T.; Kurita, H. [Japan Energy Corp., Toda, Saitama (Japan)

    1997-12-31T23:59:59.000Z

    A world-record efficiency of 26.9% (AM0, 28 C) has been obtained for InGaP/GaAs tandem solar cells fabricated by the MOCVD method. The radiation resistance of the InGaP/GaAs tandem solar cells has also been evaluated following 1 MeV electron irradiation. Degradation in the tandem cell performance has been confirmed to be mainly attributed to large degradation in the GaAs bottom cell, which features a highly doped base layer. Similar radiation-resistance with GaAs-on-Ge cells has been observed for the InGaP/GaAs tandem cell. However, some recovery of the tandem cell performance has been found due to minority-carrier injection under light illumination of forward bias, which causes defect annealing in InGaP cells. The optimal design of the InGaP base layer thickness for current matching at end of life (EOL) (after irradiation with 10{sup 15} electrons cm{sup {minus}2}) has been examined.

  10. VIOLENT FRAMES IN ACTION

    SciTech Connect (OSTI)

    Sanfilippo, Antonio P.; McGrath, Liam R.; Whitney, Paul D.

    2011-11-17T23:59:59.000Z

    We present a computational approach to radical rhetoric that leverages the co-expression of rhetoric and action features in discourse to identify violent intent. The approach combines text mining and machine learning techniques with insights from Frame Analysis and theories that explain the emergence of violence in terms of moral disengagement, the violation of sacred values and social isolation in order to build computational models that identify messages from terrorist sources and estimate their proximity to an attack. We discuss a specific application of this approach to a body of documents from and about radical and terrorist groups in the Middle East and present the results achieved.

  11. MITIGATION ACTION PLAN

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh SchoolIn12electron 9November 6, Inapril apsapsJanuaryMITIGATION ACTION

  12. California Energy Commission PROPOSED REGULATIONS

    E-Print Network [OSTI]

    California Energy Commission PROPOSED REGULATIONS MARCH 2012 CEC-400-2010-004-SD3 NONRESIDENTIAL BUILDING ENERGY USE DISCLOSURE PROGRAM Proposed Regulations Title 20, Division 2, Chapter 4 PREFACE The California Energy Commission is releasing proposed regulations for implementing Assembly

  13. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

    2014-09-08T23:59:59.000Z

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  14. Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells

    E-Print Network [OSTI]

    Alpay, S. Pamir

    Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple InxGa1-xN(InGaN)/GaN multilayers on the In composition and misfit strain. The results indicate that for non-polar m-plane configurations with ½1210InGaN//½1210GaN and ½0001InGaN//½0001GaN epitaxial

  15. Original Workshop Proposal and Description

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Description Original Workshop Proposal and Description Visualization Requirements for Computational Science and Engineering Applications Proposal for a DoE Workshop to Be Held...

  16. LCLS Proposal Review Process and Guidelines Proposal preparation

    E-Print Network [OSTI]

    Wechsler, Risa H.

    LCLS Proposal Review Process and Guidelines Proposal preparation Instructions for the proposal guidelines are posted on the LCLS user portal and website: lcls/users/proposals.html>. During the LCLS start-up phase, LCLS has and plans to continue to organize workshops focusing on the LCLS

  17. REMEDIAL ACTION PLAN

    E-Print Network [OSTI]

    Inactive Uranium; Mill Tailings Site; Uranium Mill Tremedial

    1990-01-01T23:59:59.000Z

    designated site consists of the 111-acre tailings pile, the mill yard, and piles of demolition rubble awaiting burial. The site contains 2.659 million cubic yards of tailings including 277,000 cubic yards of contaminated material in the mill yard, ore storage area, and Ann Lee Mine area; 151,000 cubic yards in the protore storage and leach pad areas; and 664,000 cubic yards of windblown contaminated soil, including excess soil that would result from excavation. Remedial action The remedial action will start with the excavation of windblown contaminated material and placement around the west, south, and east sides of the pile to buttress the slopes for increased stability. Most of the demolition rubble will be placed in the southern part of the pile and be covered with tailings. The northern part of the tailings pile (one million cubic yards) will then be excavated and placed on the south part of the pile to reduce the size of the disposal cell footprint. Demolition rubble that

  18. Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2014-04-28T23:59:59.000Z

    Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

  19. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

    2014-04-24T23:59:59.000Z

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  20. Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Li, Z. L.; Wang, X. Q.; Huang, C. C.; Rong, X.; Xu, F. J.; Tang, N.; Qin, Z. X.; Shen, B. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)] [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Sang, L. W.; Sumiya, M. [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)] [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Chen, Y. H. [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China)] [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)] [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2013-05-13T23:59:59.000Z

    Intersubband transitions (ISBT) of AlGaN/GaN multiple quantum wells (MQWs) with wavelength towards atmospheric window (3-5 {mu}m) have been investigated. A Ga-excess epitaxial method is used in the molecular beam epitaxy leading to ultra-sharp interface and negligible elements inter-diffusion. The absorption peak wavelength of the ISBT was successfully tuned in the range of 3-4 {mu}m by modifying the GaN well thickness from 2.8 to 5.5 nm. It was further found that the polarization charge density of the AlGaN/GaN MQWs was about -0.034 C/m{sup 2} which gave rise to blueshift of the ISBT wavelength and thus partially compensated its redshift with increasing well thickness.

  1. InGaN/GaN single-quantum-well microdisks

    SciTech Connect (OSTI)

    Hsu, Yu-Chi; Lo, Ikai; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)

    2012-06-11T23:59:59.000Z

    We have grown In{sub x}Ga{sub 1-x}N/GaN quantum wells atop GaN microdisk with {gamma}-LiAlO{sub 2} substrate by using plasma-assisted molecular beam epitaxy. The structural and optical properties of the samples were analyzed by transmission electron microscopy, x-ray diffraction, cathodoluminescence, and photoluminescence measurements. Based on the measured results, we obtained the indium concentration of the In{sub x}Ga{sub 1-x}N/GaN single quantum well to be x = 0.25 with a band-gap energy of 2.31 eV, which is consistent with the bowing effect of bulk In{sub x}Ga{sub 1-x}N: E{sub g}(x) = [3.42 - x * 2.65 - x * (1 - x) * 2.4] eV.

  2. Atomic layer deposition of GaN using GaCl3 and NH3 Oh Hyun Kim, Dojun Kim, and Tim Andersona

    E-Print Network [OSTI]

    Anderson, Timothy J.

    be grown at lower temperature than by CVD. As example, ALD growth of device quality GaAs, GaP, and InGaP

  3. Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures

    SciTech Connect (OSTI)

    Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

    2014-01-13T23:59:59.000Z

    In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

  4. AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Anaya Calvo, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)] [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom); Stoffels, S.; Marcon, D. [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)] [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)

    2013-11-11T23:59:59.000Z

    AlGaN/GaN heterostructure field effect transistors with a 150?nm thick GaN channel within stacked Al{sub x}Ga{sub 1?x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60?W m{sup ?1} K{sup ?1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.

  5. InGaAsP/InGaP buried heterostructure lasers at 810 nm

    SciTech Connect (OSTI)

    Wakao, K.; Isozumi, S.; Nishi, H.; Ohsaka, S.

    1984-12-01T23:59:59.000Z

    InGaAsP/InGaP buried heterostructure lasers emitting at 810 nm have been grown on GaAs substrates using two-step liquid-phase epitaxy. A threshold current of 79 mA and an external differential quantum efficiency of 26% are obtained. Fundamental transverse mode operation up to 3 mW is achieved in the laser with the active region of 3.5 ..mu..m wide.

  6. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

    2014-04-24T23:59:59.000Z

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  7. Ohmic contacts to n-GaSb

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01T23:59:59.000Z

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  8. The structure of GaAs/Si(211) heteroepitaxial layers

    SciTech Connect (OSTI)

    Liliental-Weber, Z.; Weber, E.R.; Washburn, J.; Liu, T.Y.; Kroemer, H.

    1985-05-01T23:59:59.000Z

    Gallium arsenide films grown on (211)Si by molecular-beam epitaxy have been investigated using transmission electron microscopy. The main defects observed in the alloy were of misfit dislocations, stacking faults, and microtwin lamellas. Silicon surface preparation was found to play an important role on the density of defects formed at the Si/GaAs interface. Two different types of strained-layer superlattices, InGaAs/InGaP and InGaAs/GaAs, were applied either directly to the Si substrate, to a graded layer (GaP-InGaP), or to a GaAs buffer layer to stop the defect propagation into the GaAs films. Applying InGaAs/GaAs instead of InGaAs/InGaP was found to be more effective in blocking defect propagation. In all cases of strained-layer superlattices investigated, dislocation propagation was stopped primarily at the top interface between the superlattice package and GaAs. Graded layers and unstrained AlGaAs/GaAs superlattices did not significantly block dislocations propagating from the interface with Si. Growing of a 50 nm GaAs buffer layer at 505/sup 0/C followed by 10 strained-layer superlattices of InGaAs/GaAs (5 nm each) resulted in the lowest dislocation density in the GaAs layer (approx.5 x 10/sup 7//cm/sup 2/) among the structures investigated. This value is comparable to the recently reported density of dislocations in the GaAs layers grown on (100)Si substrates. Applying three sets of the same strained layers decreased the density of dislocations an additional approx.2 to 3 times.

  9. Issues associated with the metalorganic chemical vapor deposition of ScGaN and YGaN alloys.

    SciTech Connect (OSTI)

    Koleske, Daniel David; Knapp, James Arthur; Lee, Stephen Roger; Crawford, Mary Hagerott; Creighton, James Randall; Cross, Karen Charlene; Thaler, Gerald

    2009-07-01T23:59:59.000Z

    The most energy efficient solid state white light source will likely be a combination of individually efficient red, green, and blue LED. For any multi-color approach to be successful the efficiency of deep green LEDs must be significantly improved. While traditional approaches to improve InGaN materials have yielded incremental success, we proposed a novel approach using group IIIA and IIIB nitride semiconductors to produce efficient green and high wavelength LEDs. To obtain longer wavelength LEDs in the nitrides, we attempted to combine scandium (Sc) and yttrium (Y) with gallium (Ga) to produce ScGaN and YGaN for the quantum well (QW) active regions. Based on linear extrapolation of the proposed bandgaps of ScN (2.15 eV), YN (0.8 eV) and GaN (3.4 eV), we expected that LEDs could be fabricated from the UV (410 nm) to the IR (1600 nm), and therefore cover all visible wavelengths. The growth of these novel alloys potentially provided several advantages over the more traditional InGaN QW regions including: higher growth temperatures more compatible with GaN growth, closer lattice matching to GaN, and reduced phase separation than is commonly observed in InGaN growth. One drawback to using ScGaN and YGaN films as the active regions in LEDs is that little research has been conducted on their growth, specifically, are there metalorganic precursors that are suitable for growth, are the bandgaps direct or indirect, can the materials be grown directly on GaN with a minimal defect formation, as well as other issues related to growth. The major impediment to the growth of ScGaN and YGaN alloys was the low volatility of metalorganic precursors. Despite this impediment some progress was made in incorporation of Sc and Y into GaN which is detailed in this report. Primarily, we were able to incorporate up to 5 x 10{sup 18} cm{sup -3} Y atoms into a GaN film, which are far below the alloy concentrations needed to evaluate the YGaN optical properties. After a no-cost extension was granted on this program, an additional more 'liquid-like' Sc precursor was evaluated and the nitridation of Sc metals on GaN were investigated. Using the Sc precursor, dopant level quantities of Sc were incorporated into GaN, thereby concluding the growth of ScGaN and YGaN films. Our remaining time during the no-cost extension was focused on pulsed laser deposition of Sc metal films on GaN, followed by nitridation in the MOCVD reactor to form ScN. Finally, GaN films were deposited on the ScN thin films in order to study possible GaN dislocation reduction.

  10. Over 30{percent} efficient InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Kurita, H. [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan); Ohmori, M. [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)] [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)

    1997-01-01T23:59:59.000Z

    A two-terminal monolithic InGaP/GaAs tandem solar cell with a new efficiency record of 30.28{percent} is realized with a practical large area of 4 cm{sup 2} under one-sun air-mass 1.5 global illumination. We report improvements of the tandem cell performance by introducing a double-hetero (hereafter DH) structure InGaP tunnel junction, in which the InGaP layers are surrounded by high band gap AlInP barriers. The DH structure by AlInP barriers increase the peak current of InGaP tunnel junction. The AlInP barrier directly below the InGaP top cell, which takes the part of a back surface field (hereafter BSF) layer, is found to be considerably effective in reflecting minority carriers in the top cell. The AlInP BSF layer does not only form a high potential barrier but also prevents the diffusion of zinc from a high doped tunnel junction toward the top cell during epitaxial growth. Furthermore, an InGaP tunnel junction reduces the absorption loss, which exists in a GaAs tunnel junction, and increases the photogenerated current in the GaAs bottom cell. {copyright} {ital 1997 American Institute of Physics.}

  11. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23T23:59:59.000Z

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  12. Tuning linear and nonlinear optical properties of wurtzite GaN by c-axial stress

    E-Print Network [OSTI]

    Cai, Duanjun; 10.1088/0022-3727/42/18/185107

    2009-01-01T23:59:59.000Z

    We study the linear and nonlinear optical properties of wurtzite GaN under c-axial stress field, using density functional theory calculations. The fully structural optimization at each c-axial strain was performed. The calculated dielectric functions show that tensile c-axial strain effectively improves the linear optical efficiency, especially for the band-edge transitions, and significantly increase the mobility of electrons in the conduction band. Second-order nonlinear optical susceptibilities show that the tensile c-axial strain will enhance the zero- and low-frequency nonlinear responses of GaN. The enhancement of the nonlinear optical property is explained by the reduction of the polarization of wurtzite GaN under tensile c-axial strains. Based on these findings, we propose a method for improving the electrical and optical properties of the crystal through imposing appropriate stress on the high symmetry crystalline directions.

  13. Evidence of satellite valley position in GaN by photoexcited field emission spectroscopy

    SciTech Connect (OSTI)

    Yilmazoglu, O.; Pavlidis, D.; Hartnagel, H. L. [Department of High Frequency Electronics, Technische Universitaet Darmstadt, 64283 Darmstadt (Germany); Evtukh, A.; Litovchenko, V.; Semenenko, N. [Institute of Semiconductor Physics, NASU, 03028 Kiev (Ukraine)

    2008-06-01T23:59:59.000Z

    GaN field emitter rods with nanometer diameter were fabricated by photoelectrochemical etching on a n{sup +}-GaN substrate. Their electron field emission properties were investigated under ultraviolet (UV) illumination. The Fowler-Nordheim plots of the emission current show different slopes for nonilluminated and UV illuminated devices. A model based on the electron emission from valleys having different specific electron affinities is proposed to explain the experimental results. In the absence of illumination, the GaN rods are almost fully depleted and emission takes place only from the lower valley. Upon UV illumination and presence of a high electric field at the emitter tip, the upper valley of the conduction band appears to be occupied by electrons generated at the valence band. The energy difference between the lower and upper valleys was determined to be 1.15 eV and is in good agreement with formerly published theoretical and measured values.

  14. Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Pomeroy, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)

    2014-02-14T23:59:59.000Z

    We demonstrate the ability of confocal Raman thermography using a spatial filter and azimuthal polarization to probe vertical temperature gradients within the GaN buffer layer of operating AlGaN/GaN high electron mobility transistors. Temperature gradients in the GaN layer are measured by using offset focal planes to minimize the contribution from different regions of the GaN buffer. The measured temperature gradient is in good agreement with a thermal simulation treating the GaN thermal conductivity as homogeneous throughout the layer and including a low thermal conductivity nucleation layer to model the heat flow between the buffer and substrate.

  15. SEMI-AUTOMATED LAB-ON-A-CHIP FOR DISPENSING GA-68 RADIOTRACERS

    SciTech Connect (OSTI)

    Weinberg, Irving

    2014-03-12T23:59:59.000Z

    We solved a technical problem that is hindering American progress in molecular medicine, and restricting US citizens from receiving optimal diagnostic care. Specifically, the project deals with a mother/daughter generator of positron-emitting radiotracers (Ge-68/Ga-68). These generator systems are approved in Europe but cannot be used in the USA, because of safety issues related to possible breakthrough of long-lived Ge-68 (mother) atoms. Europeans have demonstrated abilities of Ga-68-labeled radiotracers to image cancer foci with high sensitivity and specificity, and to use such methods to effectively plan therapy. The USA Food and Drug Administration (FDA) and Nuclear Regulatory Commission (NRC) have taken the position that every patient administration of Ga-68 should be preceded by an assay demonstrated that Ge-68 breakthrough is within acceptable limits. Breakthrough of parent elements is a sensitive subject at the FDA, as evidenced by the recent recall of Rb-82 generators due to inadvertent administrations of Sr-82. Commercially, there is no acceptable rapid method for assaying breakthrough of Ge-68 prior to each human administration. The gamma emissions of daughter Ga-68 have higher energies than the parent Ge-68, so that the shielding assays typically employed for Mo-99/Tc-99m generators cannot be applied to Ga-68 generators. The half-life of Ga-68 is 68 minutes, so that the standard 10-half-life delay (used to assess breakthrough in Sr-82/Rb-82 generators) cannot be applied to Ga-68 generators. As a result of the aforementioned regulatory requirements, Ga-68 generators are sold in the USA for animal use only. The American clinical community’s inability to utilize Ga-68 generators impairs abilities to treat patients domestically, and puts the USA at a disadvantage in developing exportable products. The proposed DOE project aimed to take advantage of recent technological advances developed for lab-on-a-chip (LOC) applications. Based on our experiences constructing such devices, the proposed microfluidics-based approach could provide cost-effective validation of breakthrough compliance in minutes.

  16. Philadelphia, Pennsylvania: Solar in Action (Brochure), Solar...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Philadelphia, Pennsylvania: Solar in Action (Brochure), Solar America Cities, Energy Efficiency & Renewable Energy (EERE) Philadelphia, Pennsylvania: Solar in Action (Brochure),...

  17. Guam Energy Action Plan

    SciTech Connect (OSTI)

    Conrad, M. D.; Ness, J. E.

    2013-07-01T23:59:59.000Z

    Describes the four near-term strategies selected by the Guam Energy Task Force during action planning workshops conducted in March 2013, and outlines the steps being taken to implement those strategies. Each strategy addresses one of the energy sectors identified in the earlier Guam strategic energy plan as being an essential component of diversifying Guam's fuel sources and reducing fossil energy consumption 20% by 2020. The four energy strategies selected are: (1) expanding public outreach on energy efficiency and conservation, (2) establishing a demand-side management revolving loan program, (3) exploring waste-to-energy options, and (4) influencing the transportation sector via anti-idling legislation, vehicle registration fees, and electric vehicles.

  18. A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations

    SciTech Connect (OSTI)

    Koumetz, Serge D., E-mail: Serge.Koumetz@univ-rouen.fr; Martin, Patrick; Murray, Hugues [Normandie Université-Université de Rouen-ENSICAEN-UMR 6508 LaMIPS, Laboratoire commun CNRS-NXP-PRESTO-ENSICAEN-UCBN 2, rue de la Girafe BP 5120, F-14079 Caen (France)

    2014-09-14T23:59:59.000Z

    Experimental results on the diffusion of grown-in beryllium (Be) in indium gallium arsenide (In{sub 0.53}Ga{sub 0.47}As) and indium gallium arsenide phosphide (In{sub 0.73}Ga{sub 0.27}As{sub 0.58}P{sub 0.42}) gas source molecular beam epitaxy alloys lattice-matched to indium phosphide (InP) can be successfully explained in terms of a combined kick-out and dissociative diffusion mechanism, involving neutral Be interstitials (Be{sub i}{sup 0}), singly positively charged gallium (Ga), indium (In) self-interstitials (I{sub III}{sup +}) and singly positively charged Ga, In vacancies (V{sub III}{sup +}). A new numerical method of solution to the system of diffusion equations, based on the finite difference approximations and Bairstow's method, is proposed.

  19. RCRA/UST, superfund, and EPCRA hotline training module. Introduction to: Corrective action, updated as of July 1995

    SciTech Connect (OSTI)

    NONE

    1995-11-01T23:59:59.000Z

    The module reviews the regulatory and statutory requirements and authorities governing the Resource Conservation and Recovery Act correction action process. It lists the statutory authorities for correction action and explains their application and identifies the existing regulatory authorities for corrective action and explains their application. It describes the four primary triggers for corrective action and describes the six main stages of the corrective action process. It defines terms that are specific to the corrective action process (e.g., solid waste management unit, action levels). It identifies the proposed corrective action regulations and the schedule for final rulemaking. It assesses whether or not financial assurance is required for corrective action. It describes how the corrective action program can apply to generators and other facilities that do not require a permit.

  20. Proposed Remedial Action Plan: Proposed Plan for Remedial Action at the Quarry Residuals Operable Unit of the Weldon Spring Site. DOE/OR/21548-724

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTableSelling7 AugustAFRICAN3u ;;;:: A' 3 ct : -. . . .~. .'.

  1. Dielectric function and optical properties of quaternary AlInGaN alloys

    SciTech Connect (OSTI)

    Sakalauskas, E.; Gobsch, G. [Institut fuer Physik, Technische Universitaet Ilmenau, PF 100565, 98684 Ilmenau (Germany); Reuters, B.; Khoshroo, L. Rahimzadeh; Kalisch, H.; Vescan, A. [GaN Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen (Germany); Heuken, M. [GaN Device Technology, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen (Germany); AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany); Roeppischer, M.; Cobet, C. [Leibniz-Institut fuer Analytische Wissenschaften - ISAS - e.V., Albert-Einstein-Str. 9, 12489 Berlin (Germany); Goldhahn, R. [Institut fuer Physik, Technische Universitaet Ilmenau, PF 100565, 98684 Ilmenau (Germany); Institut fuer Experimentelle Physik, Otto-von-Guericke-Universitaet Magdeburg, PF 4120, 39016 Magdeburg (Germany)

    2011-07-01T23:59:59.000Z

    The optical properties of quaternary Al{sub x}In{sub y}Ga{sub 1-x-y}N alloy films with 0.16GaN layers were grown by metal-organic vapor phase epitaxy on thick GaN/sapphire templates. High-resolution x-ray diffraction measurements revealed the pseudomorphic growth of the AlInGaN films on the GaN buffer. Rutherford backscattering and wavelength-dispersive x-ray spectroscopy analysis were used in order to determine the composition of the alloys. The ordinary dielectric function (DF) of the AlInGaN samples was determined in the range of 1-10 eV by spectroscopic ellipsometry (SE) at room temperature (synchrotron radiation: BESSY II). The sharp onset of the imaginary part of the DF defines the direct absorption edge of the alloys. At higher photon energies, pronounced peaks are observed in the DF indicating a promising optical quality of the material. These features are correlated to the critical points of the band structure (van Hove singularities). An analytical model, which permits us to accurately describe the dielectric function (or optical constants) in the range of 1-10 eV, is also presented. The band-gap and high-energy interband transition values are obtained by fitting the experimental DF with the analytical model. The strain influence on the bandgap is evaluated by using the kxp formalism. Furthermore, an empirical expression is proposed which allows us to calculate the AlInGaN band-gap and high-energy inter-band transitions in the whole compositional range (x, y). The band-gap values obtained from the empirical expression are in good agreement with both the calculated ab initio and the experimental values determined by SE.

  2. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    with the active thermoelectric cooling implemented on the same material system can improve the device performance, for the pro- posed cooling system should also be based on GaN. To real- ize this, the high-efficiency Ga,6 Great progress has been achieved in GaN-based microwave technology. GaN transistors with very high

  3. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2007-01-01T23:59:59.000Z

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  4. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

    E-Print Network [OSTI]

    The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs 1. Introduction, performance of these devices has been limited by self-heating [1] [6]. Thus, accurate modeling of heat diffusion and self-heating effects in AlGaN/GaN heterostructures and device optimization based

  5. InAsGaPInGaP high-temperature power Schottky rectifier and J. M. Woodall

    E-Print Network [OSTI]

    Woodall, Jerry M.

    °C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion is thought to be due to strong covalent bonding at the InAs/GaP interface. The InAs/GaP heterointerface effectively blocks impurity diffusion. Since InGaP is superior to GaP for high-power applica- tions, as shown

  6. GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

    E-Print Network [OSTI]

    GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer K.M. Groom, B fabrication, is demonstrated. An n-doped InGaP layer is utilised for both electrical and optical confinement-doped InGaP current blocking layer that also provides optical confinement. This tech- nology relies

  7. GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization

    E-Print Network [OSTI]

    Wetzel, Christian M.

    GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical 12180-3590, U.S.A. ABSTRACT The wide bandgap polar semiconductors GaN and ZnO and their related alloys fields, and surface terminations. With a small lattice mismatch of ~1.8 % between GaN and Zn

  8. Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates

    E-Print Network [OSTI]

    Nabben, Reinhard

    Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates: time-resolved photoluminescence, quantum dots, InGaN, Si substrate There exists a strong continuous expensive and are limited in size. Thus, heteroepitaxial growth of GaN on silicon substrates seems

  9. Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    -emitting diodes LEDs on low-defect density bulk GaN substrate, but not in green LEDs on sapphire substrate an ideal substrate for homoepitaxial growth. Here we study the microstructural properties of green GaInN/GaN-Koehler force10 resulting from a macroscopic relaxation of strain. II. CRYSTAL GROWTH c plane bulk GaN substrate

  10. Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    quantum well (QW) light-emitting diodes (LEDs) grown on sapphire and bulk GaN substrate by micro efficiency in dies grown on GaN substrates with a thermal resistance of 75 K/W. For dies on sapphire of GaN-based blue and green LEDs grown on sapphire and GaN substrates using micro-Raman spectroscopy

  11. Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy

    E-Print Network [OSTI]

    Nabben, Reinhard

    . The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate-grown heterostructures can drastically be reduced by using a template of MOVPE-GaN on the sapphire substrate, which leadsCorrelation between structural properties and optical amplification in InGaN/GaN heterostructures

  12. Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)

    SciTech Connect (OSTI)

    Bremner, S. P. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052 (Australia)] [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052 (Australia); Ban, K.-Y.; Faleev, N. N.; Honsberg, C. B. [School of Electrical, Computer and Energy Engineering, Ira A. Fulton Schools of Engineering, Solar Power Lab, Arizona State University, Tempe, Arizona 85287 (United States)] [School of Electrical, Computer and Energy Engineering, Ira A. Fulton Schools of Engineering, Solar Power Lab, Arizona State University, Tempe, Arizona 85287 (United States); Smith, D. J. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)] [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States)

    2013-09-14T23:59:59.000Z

    We describe InAs quantum dot creation in InAs/GaAsSb barrier structures grown on GaAs (001) wafers by molecular beam epitaxy. The structures consist of 20-nm-thick GaAsSb barrier layers with Sb content of 8%, 13%, 15%, 16%, and 37% enclosing 2 monolayers of self-assembled InAs quantum dots. Transmission electron microscopy and X-ray diffraction results indicate the onset of relaxation of the GaAsSb layers at around 15% Sb content with intersected 60° dislocation semi-loops, and edge segments created within the volume of the epitaxial structures. 38% relaxation of initial elastic stress is seen for 37% Sb content, accompanied by the creation of a dense net of dislocations. The degradation of In surface migration by these dislocation trenches is so severe that quantum dot formation is completely suppressed. The results highlight the importance of understanding defect formation during stress relaxation for quantum dot structures particularly those with larger numbers of InAs quantum-dot layers, such as those proposed for realizing an intermediate band material.

  13. Environmental assessment of remedial action at the Maybell uranium mill tailings site near Maybell, Colorado

    SciTech Connect (OSTI)

    Not Available

    1993-09-01T23:59:59.000Z

    The purpose of this environmental assessment (EA) is to evaluate the environmental impacts resulting from remedial action at the Maybell uranium mill tailings site near Maybell, Colorado. A biological assessment (Attachment 1) and a floodplain/wetlands assessment (Assessment 2) are included as part of this EA. The following sections and attachments describe the proposed action, affected environment, and environmental impacts associated with the proposed remedial action, including impacts to threatened and endangered species listed or proposed for listing by the US Fish and Wildlife Service.

  14. RCRA, superfund and EPCRA hotline training module. Introduction to: RCRA corrective action updated July 1996

    SciTech Connect (OSTI)

    NONE

    1996-07-01T23:59:59.000Z

    The module discusses the regulatory and statutory requirements and authorities governing the Resource Conservation and Recovery Act (RCRA) corrective action process. There are minimal regulatory requirements at present, but the Agency has issued a proposed rule (55 FR 30798; July 27, 1990) that would establish a comprehensive regulatory framework for implementing the corrective action program. This proposed rule and other guidance developed pursuant to statutory authorities are used to structure corrective action requirements in facility permits and orders. This module describes the current statutory and regulatory structure and discusses the future of the proposed rule.

  15. Webinar for Tribes, States, Local Governments, and Territories on the Clean Power Plan Supplemental Proposal

    Office of Energy Efficiency and Renewable Energy (EERE)

    On Tuesday, October 28, 2014, EPA issued an action related to the proposed Clean Power Plan to cut carbon pollution from power plants. EPA is following through on its commitment made in June to...

  16. Remedial action plan and site design for stabilization of the inactive uranium mill tailings sites at Slick Rock, Colorado: Remedial Action Selection Report. Preliminary final

    SciTech Connect (OSTI)

    Not Available

    1994-03-01T23:59:59.000Z

    This proposed remedial action plan incorporates the results of detailed investigation of geologic, geomorphic, and seismic conditions at the proposed disposal site. The proposed remedial action will consist of relocating the uranium mill tailings, contaminated vicinity property materials, demolition debris, and windblown/waterborne materials to a permanent repository at the proposed Burro Canyon disposal cell. The proposed disposal site will be geomorphically stable. Seismic design parameters were developed for the geotechnical analyses of the proposed cell. Cell stability was analyzed to ensure long-term performance of the disposal cell in meeting design standards, including slope stability, settlement, and liquefaction potential. The proposed cell cover and erosion protection features were also analyzed and designed to protect the RRM (residual radioactive materials) against surface water and wind erosion. The location of the proposed cell precludes the need for permanent drainage or interceptor ditches. Rock to be used on the cell top-, side-, and toeslopes was sized to withstand probable maximum precipitation events.

  17. Fourier Analytic Approach to Quantum Estimation of Group Action

    E-Print Network [OSTI]

    Masahito Hayashi

    2014-09-08T23:59:59.000Z

    This article proposes a unified method to estimation of group action by using the inverse Fourier transform of the input state. The method provides optimal estimation for commutative and non-commutative group with/without energy constraint. The proposed method can be applied to projective representations of non-compact groups as well as of compact groups. This paper addresses the optimal estimation of R, U(1), SU(2), SO(3), and R^2 with Heisenberg representation under a suitable energy constraint.

  18. Viewing biology in action | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    biology in action Released: June 11, 2014 DOE-funded pilot program will create mesoscale biological imaging platform James Evans EMSL received first-year funding of almost...

  19. Inequality, Coalitions and Collective Action

    E-Print Network [OSTI]

    Bardhan, Pranab; Singh, Nirvikar

    2004-01-01T23:59:59.000Z

    Inequality, Coalitions and Collective Action Pranab K.coalitions) and underlying inequality in the distribution ofO10, P0 Key Words: inequality, self-enforcing, collective

  20. QCD Thermodynamics with Improved Actions

    E-Print Network [OSTI]

    Karsch, Frithjof; Engels, J; Joswig, R; Laermann, E; Peikert, A; Petersson, B

    1996-01-01T23:59:59.000Z

    The thermodynamics of the SU(3) gauge theory has been analyzed with tree level and tadpole improved Symanzik actions. A comparison with the continuum extrapolated results for the standard Wilson action shows that improved actions lead to a drastic reduction of finite cut-off effects already on lattices with temporal extent $N_\\tau=4$. Results for the pressure, the critical temperature, surface tension and latent heat are presented. First results for the thermodynamics of four-flavour QCD with an improved staggered action are also presented. They indicate similarly large improvement factors for bulk thermodynamics.

  1. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04T23:59:59.000Z

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  2. Gas-source molecular beam epitaxial growth and characterization of the (Al,In,Ga)NP/GaP material system and Its applications to light-emitting diodes

    E-Print Network [OSTI]

    Odnoblyudov, Vladimir

    2006-01-01T23:59:59.000Z

    on metamorphic growth of InGaP layers on GaP substrates, astemperature amber photoluminescence from InGaP QWs, grownon a metamorphic InGaP layer. References: Fred Shubert E. ,

  3. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06T23:59:59.000Z

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  4. ccsd-00000821(version1):6Nov2003 Alloy effects in Ga1-xInxN/GaN heterostructures

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    ccsd-00000821(version1):6Nov2003 Alloy effects in Ga1-xInxN/GaN heterostructures Duc-Phuong Nguyen, France We show that the large band offsets between GaN and InN and the heavy carrier effec- tive masses preclude the use of the Virtual Crystal Approximation to describe the electronic structure of Ga1-xInxN/GaN

  5. DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS

    E-Print Network [OSTI]

    Honsberg, Christiana

    DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS Omkar Jani1 with a band gap of 2.4 eV or greater. InxGa1-xN is one of a few alloys that can meet this key requirement. InGaN.4 eV. InGaN has the appropriate optical properties and has been well demonstrated for light

  6. AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD

    E-Print Network [OSTI]

    Boyer, Edmond

    AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD R. Meunier1 , A, 38054 Grenoble Cedex 9, France 2 LAAS-CNRS, 7 Avenue du Colonel Roche, 31400 Toulouse, France AlGaN /GaN behavior. Those trapped charges can be associated to the carbon contamination of the AlGaN surface

  7. Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

    E-Print Network [OSTI]

    Bowers, John

    Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth S for publication 5 January 1999 The emission mechanisms of bulk GaN and InGaN quantum wells QWs were studied suggest that TDs simply reduce the net volume of light-emitting area. This effect is less pronounced in InGaN

  8. Comparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities

    E-Print Network [OSTI]

    Boyer, Edmond

    , transmission and absorption spectra of bulk GaAs, GaN and ZnO microcavities, in order to compareComparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities SAs and GaN microcavities. PACS numbers: 78.67.-n, 71.36.+c, 78.20.Ci, 78.55.Cr, 78.55.Et Keywords: polariton

  9. Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells

    E-Print Network [OSTI]

    As, Donat Josef

    molecular beam epitaxy on free standing 3C-SiC 001 substrates. During growth of Al0.15Ga0.85N/GaN quantum growth of the quantum structures an 800 nm thick GaN buffer layer was deposited on the 3C-SiC substrate. The buffer and the c-AlGaN/GaN quantum wells were grown at a substrate temperature of 720 °C. The layers were

  10. Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template

    SciTech Connect (OSTI)

    Wang, Y.D.; Zang, K.Y.; Chua, S.J.; Tripathy, S.; Chen, P.; Fonstad, C.G. [Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2005-12-19T23:59:59.000Z

    We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110 nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

  11. AlGaN/GaN HEMT With 300-GHz fmax

    E-Print Network [OSTI]

    Chung, Jinwook W.

    We report on a gate-recessed AlGaN/GaN high-electron mobility transistor (HEMT) on a SiC substrate with a record power-gain cutoff frequency (f[subscript max]). To achieve this high f[subscript max], we combined a low-damage ...

  12. Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

    E-Print Network [OSTI]

    Piner, Edwin L.

    This letter describes a gate-first AlGaN/GaN high-electron mobility transistor (HEMT) with a W/high-k dielectric gate stack. In this new fabrication technology, the gate stack is deposited before the ohmic contacts, and ...

  13. High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

    E-Print Network [OSTI]

    Hartono, Haryono

    The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. ...

  14. Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors

    E-Print Network [OSTI]

    Lu, Bin

    In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain ...

  15. Investigation of Strain in AlGaN/GaN Multi Quantum Wells by Complementary Techniques

    SciTech Connect (OSTI)

    Devaraju, G.; Sathish, N.; Pathak, A. P. [School of Physics, University of Hyderabad, Central University (P.0), Hyderabad 500 046 (India); Dhamodaran, S. [Department of Physics, Indian Institute of Technology, IIT P O, Kanpur UP 208016 (India); Gaca, J.; Wojcik, M. [Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland); Turos, A. [Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland); Soltan Institute for Nuclear Studies, Swierk/Otwock, Warsaw (Poland); Arora, B. M. [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai-400 005 (India)

    2009-03-10T23:59:59.000Z

    Al{sub 0.49}Ga{sub 0.51}N(12 nm)/GaN (13 nm) Multi Quantum Wells of 15 periods are grown on sapphire by MOCVD technique. GaN/AlN, each of thickness 200 nm and 20 nm respectively, are used as buffer layers between substrate and epilayer to incorporate the strain in epilayers. It is a well established technique to engineer the band gap in Al{sub x}Ga{sub 1-x}N by adjusting alloy composition. These samples are used in visible and UV light emitters. In the present study, we employ a photoluminescence technique to estimate the composition and luminescence peak positions of AlGaN and GaN. Crystallinity and quality of interfaces have been studied by Rocking curve scan. The Threading Dislocations formed at the GaN buffer layer travel across the entire layers to the surface to form good quality films. Photo-luminescence results show a very sharp GaN peak at 3.4 eV, as observed and reported by others, which shows that samples are free from point defects.

  16. Road Map Team Proposal Form Proposal: CAR30

    E-Print Network [OSTI]

    Suzuki, Masatsugu

    Road Map Team Proposal Form Proposal: CAR30 1: Road Map Team Name: Rankings and Reputation; Creative Activities and Research 1b: Team Theme Name: Go Big. Proposal Description: The Rankings and Reputation Team and the Creative Activities and Research Team

  17. Nucleon axial charge from quenched lattice QCD with domain wall fermions and improved gauge action

    E-Print Network [OSTI]

    Shoichi Sasaki; Tom Blum; Shigemi Ohta; Kostas Orginos

    2001-10-12T23:59:59.000Z

    In our previous DWF calculation with the Wilson gauge action at $\\beta=6.0$ ($a^{-1}\\simeq$ 1.9 GeV) on a $16^3 \\times 32 \\times 16$ lattice, we found that $\\Ga$ had a fairly strong dependence on the quark mass. A simple linear extrapolation of $\\Ga$ to the chiral limit yielded a value that was almost a factor of two smaller than the experimental one. Here we report our recent study of this issue. In particular, we investigate possible errors arising from finite lattice volume, especially in the lighter quark mass region. We employ a RG-improved gauge action (DBW2), which maintains very good chiral behavior even on a coarse lattice ($a^{-1}\\simeq$ 1.3 GeV), in order to perform simulations at large physical volume ($> (2{\\rm fm})^3$). Our preliminary results suggest that the finite volume effect is significant.

  18. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21T23:59:59.000Z

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(×2.1±1) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  19. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

    1997-05-01T23:59:59.000Z

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  20. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02T23:59:59.000Z

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  1. Rapid silicon outdiffusion from SiC substrates during molecular-beam epitaxial growth of AlGaN/GaN/AlN transistor structures

    SciTech Connect (OSTI)

    Hoke, W.E.; Torabi, A.; Mosca, J.J.; Hallock, R.B.; Kennedy, T.D. [Raytheon RF Components, 362 Lowell Street, Andover, Massachusetts 01810 (United States)

    2005-10-15T23:59:59.000Z

    AlGaN/GaN/AlN transistor structures were grown onto SiC substrates by molecular-beam epitaxy. Under aluminum-rich growth conditions for the AlN nucleation layer, undesirable n-type conduction is observed near the GaN/AlN interface for even thick (>1000 A) AlN layers. Silicon is identified as the unwanted dopant from secondary-ion mass spectroscopy measurements. Atomic force microscopy surface maps reveal free aluminum metal on AlN surfaces grown under modest aluminum-rich conditions. It is proposed that rapid silicon migration is caused by molten aluminum reacting with the SiC substrate resulting in dissolved silicon that rapidly migrates through the growing AlN layer. This behavior is significantly reduced using a growth flux ratio of aluminum to reactive nitrogen close to unity. The resulting buffer leakage current of the GaN high electron mobility transistor structure is reduced by more than four orders of magnitude.

  2. BIOMASS ACTION PLAN FOR SCOTLAND

    E-Print Network [OSTI]

    BIOMASS ACTION PLAN FOR SCOTLAND #12; #12;© Crown copyright 2007 ISBN: 978 0 7559 6506 9 Scottish% recyclable. #12;A BIOMASS ACTION PLAN FOR SCOTLAND #12;#12;1 CONTENTS FOREWORD 3 1. EXECUTIVE SUMMARY 5 2. INTRODUCTION 9 3. WIDER CONTEXT 13 4. SCOTLAND'S ROLE IN THE UK BIOMASS STRATEGY 17 5. BIOMASS HEATING 23 6

  3. STUDENT DISCIPLINARY ACTION FORM INSTRUCTIONS

    E-Print Network [OSTI]

    Baltisberger, Jay H.

    STUDENT DISCIPLINARY ACTION FORM INSTRUCTIONS Labor Program Office Berea College While one across campus. The "Student Disciplinary Action Form" was designed to provide labor supervisors directly with the student and discuss the matter in private. Calmly discuss the offense and the corrective

  4. California Energy Commission PROPOSED REGULATIONS

    E-Print Network [OSTI]

    California Energy Commission PROPOSED REGULATIONS ENFORCEMENT PROCEDURES on concepts for the proposed regulations. Energy Commission staff held additional public workshops on March regulations. Throughout this process, the Energy Commission received and considered comments from

  5. California Energy Commission PROPOSED REGULATIONS

    E-Print Network [OSTI]

    California Energy Commission PROPOSED REGULATIONS INITIAL STATEMENT OF REASONS FOR ENFORCEMENT CEC3002013004 CALIFORNIA ENERGY COMMISSION Edmund G. Brown, Jr., Governor #12;#12;1 INITIAL STATEMENT OF REASONS PROPOSED REGULATIONS ENFORCEMENT PROCEDURES FOR THE RENEWABLES PORTFOLIO STANDARD

  6. Large internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko, Gerald Hnig, Christian Kindel, Sven Rodt, Andr Strittmatter et al.

    E-Print Network [OSTI]

    Nabben, Reinhard

    Large internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko, Gerald Hönig, Christian transitions in wurtzite InGaN/GaN coupled quantum dot nanowire heterostructures with polarization internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko,a Gerald Hönig, Christian Kindel, Sven

  7. Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Guibao Xu, Guan Sun, Yujie J. Ding, Hongping Zhao, Guangyu Liu et al.

    E-Print Network [OSTI]

    Gilchrist, James F.

    Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Guibao Xu, Guan Sun, Yujie overgrowth on residual strain and In incorporation in a-plane InGaN/GaN quantum wells on r- sapphire substrates J. Appl. Phys. 113, 023506 (2013) Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple

  8. Quantum confinement in GaP nanoclusters

    SciTech Connect (OSTI)

    Laurich, B.K.; Smith, D.C.; Healy, M.D.

    1994-06-01T23:59:59.000Z

    We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.

  9. Modeling of electronic transport in GaN n-i-p junctions Laboratoire de Physique du Solide, Facults Universitaires Notre-Dame de la Paix, Rue de Bruxelles 61,

    E-Print Network [OSTI]

    Mayer, Alexandre

    Modeling of electronic transport in GaN n-i-p junctions A. Mayera) Laboratoire de Physique du) We propose a model and an algorithm for computing the transport properties of GaN n-i-p devices as cold cathodes2,3 or thermoelectric coolers.4­8 For applications as electronic emitters, the idea

  10. PROPOSED ENERGY PROVISIONS OF THE

    E-Print Network [OSTI]

    PROPOSED ENERGY PROVISIONS OF THE CALIFORNIA GREEN BUILDING STANDARDS CODE (UNMARKED) PART;Proposed Energy Provisions of the California Green Building Standards Code (Unmarked) Page 2 CHAPTER 4 N LY #12;Proposed Energy Provisions of the California Green Building Standards Code (Unmarked) Page

  11. LBNL Frequently Needed Proposal Information

    E-Print Network [OSTI]

    06/05/2014 LBNL Frequently Needed Proposal Information Frequently Needed Proposal information is LBNL Institutional Information that may be required to complete proposals and grant applications Berkeley National Laboratory (LBNL) is operated by The Regents of the University of California (UC

  12. UID-GaN doping1016 cm-3 2 m 5 m2 m

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    2 µm Drain Silicon UID-GaN ­ doping1016 cm-3 1.1 µm 2 µm GateSource 2 µm 5 µm2 µm AirAir Al0.25GaN ­ doping1015 cm-3 30 nm Drain Silicon UID-GaN P-GaNSource AirAir AlxGaN Drain Silicon UID-GaN GateSource AirAir AlxGaN Gate (a) (b) (c) Drain Silicon UID-GaN P-GaNSource AirAir AlxGaN Gate (d) P-GaN P-GaN 30

  13. EXPANSIVE SUBDYNAMICS FOR ALGEBRAIC Z d ACTIONS MANFRED EINSIEDLER, DOUGLAS LIND, RICHARD MILES, AND THOMAS WARD

    E-Print Network [OSTI]

    Lind, Douglas A.

    EXPANSIVE SUBDYNAMICS FOR ALGEBRAIC Z d ­ACTIONS MANFRED EINSIEDLER, DOUGLAS LIND, RICHARD MILES spaces was proposed by Boyle and Lind in terms of expansive behavior along lower­dimensional subspaces

  14. EXPANSIVE SUBDYNAMICS FOR ALGEBRAIC Zd-ACTIONS MANFRED EINSIEDLER, DOUGLAS LIND, RICHARD MILES, AND THOMAS WARD

    E-Print Network [OSTI]

    Lind, Douglas A.

    EXPANSIVE SUBDYNAMICS FOR ALGEBRAIC Zd-ACTIONS MANFRED EINSIEDLER, DOUGLAS LIND, RICHARD MILES spaces was proposed by Boyle and Lind in terms of expansive behavior along lower-dimensional subspaces

  15. Optimized Execution of Action Chains through Subgoal Refinement Freek Stulp and Michael Beetz

    E-Print Network [OSTI]

    Cremers, Daniel

    Optimized Execution of Action Chains through Subgoal Refinement Freek Stulp and Michael Beetz, Germany {stulp,beetz}@in.tum.de Abstract In this paper we propose a novel computation model

  16. Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers

    SciTech Connect (OSTI)

    Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

    2013-05-28T23:59:59.000Z

    Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

  17. Epitaxial GaN films by hyperthermal ion-beam nitridation of Ga droplets

    SciTech Connect (OSTI)

    Gerlach, J. W.; Ivanov, T.; Neumann, L.; Hoeche, Th.; Hirsch, D.; Rauschenbach, B. [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), D-04318 Leipzig (Germany)

    2012-06-01T23:59:59.000Z

    Epitaxial GaN film formation on bare 6H-SiC(0001) substrates via the process of transformation of Ga droplets into a thin GaN film by applying hyperthermal nitrogen ions is investigated. Pre-deposited Ga atoms in well defined amounts form large droplets on the substrate surface which are subsequently nitridated at a substrate temperature of 630 Degree-Sign C by a low-energy nitrogen ion beam from a constricted glow-discharge ion source. The Ga deposition and ion-beam nitridation process steps are monitored in situ by reflection high-energy electron diffraction. Ex situ characterization by x-ray diffraction and reflectivity techniques, Rutherford backscattering spectrometry, and electron microscopy shows that the thickness of the resulting GaN films depends on the various amounts of pre-deposited gallium. The films are epitaxial to the substrate, exhibit a mosaic like, smooth surface topography and consist of coalesced large domains of low defect density. Possible transport mechanisms of reactive nitrogen species during hyperthermal nitridation are discussed and the formation of GaN films by an ion-beam assisted process is explained.

  18. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08T23:59:59.000Z

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  19. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

    1998-01-01T23:59:59.000Z

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  20. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09T23:59:59.000Z

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  1. High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

    SciTech Connect (OSTI)

    Koblmueller, G. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Walter Schottky Institut, Technische Universitaet Muenchen, D-85748 Garching (Germany); Chu, R. M.; Raman, A.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Speck, J. S. [Department of Materials, University of California, Santa Barbara, California 93106 (United States)

    2010-02-15T23:59:59.000Z

    We present combined in situ thermal cleaning and intentional doping strategies near the substrate regrowth interface to produce high-quality AlGaN/GaN high electron mobility transistors on semi-insulating (0001) GaN templates with low interfacial impurity concentrations and low buffer leakage. By exposing the GaN templates to an optimized thermal dissociation step in the plasma-assisted molecular beam epitaxy environment, oxygen, carbon, and, to lesser extent, Si impurities were effectively removed from the regrowth interface under preservation of good interface quality. Residual Si was further compensated by C-doped GaN via CBr{sub 4} to yield highly resistive GaN buffer layers. Improved N-rich growth conditions at high growth temperatures were then utilized for subsequent growth of the AlGaN/GaN device structure, yielding smooth surface morphologies and low residual oxygen concentration with large insensitivity to the (Al+Ga)N flux ratio. Room temperature electron mobilities of the two-dimensional electron gas at the AlGaN/GaN interface exceeded >1750 cm{sup 2}/V s and the dc drain current reached {approx}1.1 A/mm at a +1 V bias, demonstrating the effectiveness of the applied methods.

  2. actions significant actions: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Commitment in January 2009. In doing so, he joined more than 600 presidents to achieve climate neutrality as soon as possible. 2. Initiate two or more tangible actions to reduce...

  3. Mind Out of Action: The Intentionality of Automatic Actions 

    E-Print Network [OSTI]

    Di Nucci, Ezio

    2008-01-01T23:59:59.000Z

    We think less than we think. My thesis moves from this suspicion to show that standard accounts of intentional action can't explain the whole of agency. Causalist accounts such as Davidson's and Bratman's, according to ...

  4. Stark effect in ensembles of polar (0001) Al{sub 0.5}Ga{sub 0.5}N/GaN quantum dots and comparison with semipolar (11?22) ones

    SciTech Connect (OSTI)

    Leroux, M.; Brault, J.; Kahouli, A.; Damilano, B.; Mierry, P. de; Korytov, M. [Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, CNRS, Rue Bernard Grégory, 06560 Valbonne (France); Maghraoui, D. [Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, 2092 El Manar (Tunisia); Kim, Je-Hyung; Cho, Yong-Hoon [Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 305-701 (Korea, Republic of)

    2014-07-21T23:59:59.000Z

    This work presents a continuous-wave photoluminescence study of Al{sub 0.5}Ga{sub 0.5}N/GaN quantum dots grown by ammonia-assisted molecular beam epitaxy on sapphire, either on the wurtzite polar (0001) or the semipolar (11?22) plane. Due to interface polarization discontinuities, the polar dots are strongly red-shifted by the Stark effect and emit in the visible range. Carrier injection screening of the polarization charges has been studied. A model relying on average dot heights and dot height variances, as measured by transmission electron microscopy, is proposed. It can account for the injection dependent luminescence energies and efficiencies. The electric field discontinuity deduced from the fittings is in good agreement with theoretical expectations for our barrier composition. On the contrary, semipolar quantum dot ensembles always emit above the gap of GaN strained to Al{sub 0.5}Ga{sub 0.5}N. Their luminescence linewidth is significantly lower than that of polar ones, and their energy does not shift with injection. Our study then confirms the expected strong decrease of the Stark effect for (11?22) grown (Al,Ga)N/GaN heterostructures.

  5. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01T23:59:59.000Z

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  6. PHYSICAL REVIEW B 85, 045319 (2012) Photoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities

    E-Print Network [OSTI]

    Vuckovic, Jelena

    2012-01-01T23:59:59.000Z

    in materials systems, including InP/InGaP,6­9 InP/GaP,10,11 InP/AlGaInP,12,13 GaInP/GaP,14 InAs/GaP,15 and Al have been observed only in the InP/InGaP and InP/AlGaInP systems. GaP-based materials, by contrastP compared to InGaP is preferable for on-chip frequency downconversion to telecom wavelengths. Recently,17

  7. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States); Yarrison-Rice, Jan [Department of Physics, Miami University, Oxford, OH 45056 (United States); Gao, Qiang; Tan, Hoe; Jagadish, Chennupati [Department of Electronic Materials and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Etheridge, Joanne [Monash Centre for Electron Microscopy, Monash University, Victoria, 3800 (Australia); Wong, Bryan M. [Materials Chemistry Department, Sandia National Laboratories, Livermore, CA 94551 (United States)

    2013-12-04T23:59:59.000Z

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  8. Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

    SciTech Connect (OSTI)

    Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France)] [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)] [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Física, Universidade Federal do Ceará, P.O. Box 6030, Fortaleza–CE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain)] [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Goñi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)] [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)

    2014-01-06T23:59:59.000Z

    The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

  9. Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates

    SciTech Connect (OSTI)

    Kandaswamy, P. K.; Monroy, E. [CEA/CNRS group 'Nanophysique et semiconducteurs', INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Machhadani, H.; Sakr, S.; Tchernycheva, M.; Julien, F. H. [Photis, Institut d'Electronique Fondamentale, Universite Paris-Sud, 91405 Orsay Cedex (France); Bougerol, C. [CEA/CNRS group 'Nanophysique et semiconducteurs', Institut Neel, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)

    2009-10-05T23:59:59.000Z

    We report on the observation of midinfrared intersubband absorption in Si-doped GaN/AlGaN superlattices grown by plasma-assisted molecular-beam epitaxy on semi-insulating GaN-on-Si(111) templates. TM-polarized absorption attributed to transition between the first two electronic levels in the quantum wells peaked in the range from 2 to 9 {mu}m. The relative spectral width remains around 20% in the whole midinfrared spectral range. Doping is predicted to have a large influence on the intersubband absorption energy due to screening of polarization-induced internal electric field.

  10. RCRA corrective action: Work plans

    SciTech Connect (OSTI)

    Not Available

    1995-02-01T23:59:59.000Z

    This Information Brief describes the work plans that owners/operators may have to prepare in conjunction with the performance of corrective action for compliance with RCRA guidelines. In general, the more complicated the performance of corrective action appears from the remedial investigation and other analyses, the more likely it is that the regulator will impose work plan requirements. In any case, most owner/operators will prepare work plans in conjunction with the performance of corrective action processes as a matter of best engineering management practices.

  11. Handling Constraints in Multi-Objective GA for Embedded System Design Biman Chakraborty Ting Chen Tulika Mitra Abhik Roychoudhury

    E-Print Network [OSTI]

    Mitra, Tulika

    performance while minimizing energy and area requirement. The multi- objective nature of these optimization then propose a hybrid optimization strategy that combines GA with branch and bound search. Our hybrid algorithm-objective search prob- lem, where performance, power, area etc. are the differ- ent optimization criteria, to find

  12. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 56, NO. 12, DECEMBER 2009 2895 Measurement of Channel Temperature in GaN

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    -temperature estimation is particularly complicated in high-power-density devices such as GaN HEMTs because self-heating transistors (HEMTs) is proposed. The technique is based on electrical measurements of performance electrical measurement, no special design in device geometry is required, and packaged devices can

  13. Proposed finding of no significant impact for the Sakakawea Medical Center coal-fired heating plant

    SciTech Connect (OSTI)

    Not Available

    1994-07-01T23:59:59.000Z

    The Department of Energy (the Department) has prepared an environmental assessment (Assessment) (DOE/EA-0949) to identify and evaluate the potential environmental impacts of a proposed action at the Sakakawea Medical Center (the Center) in Hazen, North Dakota. The proposed action would replace the existing No. 2 fuel oil-fired boilers supplemented by electric reheat with a new coal-fired hot water heating plant, using funds provided from a grant under the Institutional Conservation Program. Based on the analysis in DOE/EA-0949, the Department has determined that the proposed action is not a major federal action significantly affecting the quality of the human environment, within the meaning of the National Environmental Policy Act (NEPA) of 1969, as amended. Therefore, preparation of an Environmental Impact Statement is not required, and the Department is issuing this Finding of No Significant Impact (Finding).

  14. Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques

    SciTech Connect (OSTI)

    Ga?evi?, Ž., E-mail: gacevic@isom.upm.es; Calleja, E. [Universidad Politécnica de Madrid, Avda. Complutense s/n, 28040 Madrid (Spain); Rossbach, G.; Butté, R.; Glauser, M.; Levrat, J.; Cosendey, G.; Carlin, J.-F.; Grandjean, N. [Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Réveret, F. [Institut Pascal, UMR 6602 UBP/CNRS, Clermont Université, 24 Avenue des Landais, F-63177 Aubière Cedex (France)

    2013-12-21T23:59:59.000Z

    A 3?/2 (In,Ga)N/GaN resonant cavity, designed for ?415?nm operation, is grown by molecular beam epitaxy and is sandwiched between a 39.5-period (In,Al)N/GaN distributed Bragg reflector (DBR), grown on c-plane GaN-on-sapphire pseudo-substrate by metal-organic vapor phase epitaxy and an 8-period SiO{sub 2}/ZrO{sub 2} DBR, deposited by electron beam evaporation. Optical characterization reveals an improvement in the cavity emission spectral purity of approximately one order of magnitude due to resonance effects. The combination of spectrophotometric and micro-reflectivity measurements confirms the strong quality (Q)-factor dependence on the excitation spot size. We derive simple analytical formulas to estimate leak and residual absorption losses and propose a simple approach to model the Q-factor and to give a quantitative estimation of the weight of cavity disorder. The model is in good agreement with both transfer-matrix simulation and the experimental findings. We point out that the realization of high Q-factor (In,Ga)N containing microcavities on GaN pseudo-substrates is likely to be limited by the cavity disorder.

  15. Effects of bias and temperature on the intersubband absorption in very long wavelength GaAs/AlGaAs quantum well infrared photodetectors

    SciTech Connect (OSTI)

    Liu, X. H.; Zhou, X. H., E-mail: xhzhou@mail.sitp.ac.cn; Li, N.; Liao, K. S.; Huang, L.; Li, Q.; Li, Z. F.; Chen, P. P.; Lu, W. [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083 (China); Wang, L.; Sun, Q. L. [Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China)

    2014-03-28T23:59:59.000Z

    The temperature- and bias-dependent photocurrent spectra of very long wavelength GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) are studied using spectroscopic measurements and corresponding theoretical calculations. It is found that the peak response wavelength will shift as the bias and temperature change. Aided by band structure calculations, we propose a model of the double excited states and explain the experimental observations very well. In addition, the working mechanisms of the quasi-bound state confined in the quantum well, including the processes of tunneling and thermionic emission, are also investigated in detail. We confirm that the first excited state, which belongs to the quasi-bound state, can be converted into a quasi-continuum state induced by bias and temperature. These obtained results provide a full understanding of the bound-to-quasi-bound state and the bound-to-quasi-continuum state transition, and thus allow for a better optimization of QWIPs performance.

  16. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01T23:59:59.000Z

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  17. Degradation mechanisms of GaN high electron mobility transistors

    E-Print Network [OSTI]

    Joh, Jungwoo

    2007-01-01T23:59:59.000Z

    In spite of their extraordinary performance, GaN high electron mobility transistors (HEMT) have still limited reliability. In RF power applications, GaN HEMTs operate at high voltage where good reliability is essential. ...

  18. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgül Okur [Department of Statistics, Giresun University, Giresun (Turkey); Akdemir, Hande Günay; ??can, ?mdat [Department of Mathematics, Giresun University, Giresun (Turkey)

    2014-08-20T23:59:59.000Z

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  19. TEM-Untersuchungen an GaN basierten Halbleiterheterostrukturen fur

    E-Print Network [OSTI]

    Schubart, Christoph

    TEM-Untersuchungen an GaN basierten Halbleiterheterostrukturen f¨ur optoelektronische Anwendungen . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 5.1.2 Versetzungen bei Homoapitaxie auf GaN-Substraten . . . . 79 5.2 Versetzungsreduktion durch

  20. GaN Nanopore Arrays: Fabrication and Characterization

    E-Print Network [OSTI]

    Wang, Yadong

    GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...

  1. Climate Action Plan (New Orleans)

    Broader source: Energy.gov [DOE]

    New Orleans' Climate Action Plan will provide a road map to reach the City's greenhouse gas (GHG) reduction goal by 2030 while orchestrating its adaptation to climate change. The CAP will outline...

  2. ICDF Complex Remedial Action Report

    SciTech Connect (OSTI)

    W. M. Heileson

    2007-09-26T23:59:59.000Z

    This Idaho CERCLA Disposal Facility (ICDF) Remedial Action Report has been prepared in accordance with the requirements of Section 6.2 of the INEEL CERCLA Disposal Facility Remedial Action Work Plan. The agency prefinal inspection of the ICDF Staging, Storage, Sizing, and Treatment Facility (SSSTF) was completed in June of 2005. Accordingly, this report has been developed to describe the construction activities completed at the ICDF along with a description of any modifications to the design originally approved for the facility. In addition, this report provides a summary of the major documents prepared for the design and construction of the ICDF, a discussion of relevant requirements and remedial action objectives, the total costs associated with the development and operation of the facility to date, and identification of necessary changes to the Agency-approved INEEL CERCLA Disposal Facility Remedial Action Work Plan and the ICDF Complex Operations and Maintenance Plan.

  3. Climate Action Plan (Ontario, Canada)

    Broader source: Energy.gov [DOE]

    Climate Ready, Ontario's Adaptation Strategy and Action Plan, outlines the problems, goals, and key strategies for the province's approach to climate change and the problems it poses. The Plan...

  4. UCSF Sustainability Action Plan: Executive Summary

    E-Print Network [OSTI]

    Yamamoto, Keith

    UCSF Sustainability Action Plan: Executive Summary Issue Date: April 21, 2011 #12;UCSF Sustainability Action Plan Executive Summary April 21, 2011 Page 1 Table of Contents An Introduction to the Sustainability Action Plan

  5. OVERVIEW OF PROPOSED TRANSPORTATION ENERGY

    E-Print Network [OSTI]

    ......................................................................................................................12 California Freight Energy Demand Model..............................................................................................13 California Transit Energy Demand ModelOVERVIEW OF PROPOSED TRANSPORTATION ENERGY ANALYSES FOR THE 2007 INTEGRATED ENERGY POLICY REPORT

  6. Price/Cost Proposal Form

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    PREPARATION INSTRUCTIONS PriceCost Proposal: Provide complete, current, and accurate cost or pricing data in accordance with Federal and Department of Energy Acquisition...

  7. Proposal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC)IntegratedSpeedingTechnical News,Program DirectionProjectPromiseProperty - THERE

  8. Proposed

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC)IntegratedSpeedingTechnical News,Program

  9. Proposals

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible forPortsmouth/Paducah47,193.70 HgPromising MagnesiumDOE/Richland Operations Office

  10. Height stabilization of GaSb/GaAs quantum dots by Al-rich capping

    SciTech Connect (OSTI)

    Smakman, E. P., E-mail: e.p.smakman@tue.nl; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven (Netherlands); DeJarld, M.; Martin, A. J.; Millunchick, J. [Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Luengo-Kovac, M.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2014-09-01T23:59:59.000Z

    GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.

  11. 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly ...

  12. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A. [Institute of Physics, NASU, Pr. Nauki 46, Kiev 03028 (Ukraine); Belyaev, A. E. [Institute of Semiconductor Physics, NASU, Pr. Nauki 45, Kiev 03028 (Ukraine); Vitusevich, S. A., E-mail: s.vitusevich@fz-juelich.de; Hardtdegen, H.; Lüth, H. [Peter Grünberg Institute (PGI-8,PGI-9), Forschungszentrum Jülich, Jülich D-52425 (Germany)

    2014-02-17T23:59:59.000Z

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8?×?10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  13. Cubic AlGaN/GaN Hetero-Junction Field-Effect Transistors with Normally-on and Normally-off

    E-Print Network [OSTI]

    As, Donat Josef

    Cubic AlGaN/GaN Hetero-Junction Field-Effect Transistors with Normally-on and Normally-effect transistors (HFETs) in GaN technology. HFET structures were fabricated of non-polar cubic AlGaN/GaN hetero insulation of 3C-SiC was realized by Ar+ implantation before c-AlGaN/GaN growth. HFETs with normally

  14. A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    WE4A-5 A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs Jane J a GaN-based broadband power amplifier using AlGaN/GaN-HEMTs, grown on sapphire substrates amplifier using GaN- HEMTs-on-Sapphire. I INTRODUCTION GaN HEMTs have enormous potential for realizing high

  15. IPAP Conference Series 1: IWN2000, Nov., 2000 1 Morphology Dependent Growth Kinetics of Ga-polar GaN(0001)

    E-Print Network [OSTI]

    Cohen, Philip I.

    IPAP Conference Series 1: IWN2000, Nov., 2000 1 Morphology Dependent Growth Kinetics of Ga-polar GaN, cohen@ece.umn.edu GaN grown on Ga polar GaN templates prepared by metal-organic vapor deposition shows to equilibrium models of the growth. The results indicate that Ga-polar GaN(0001) has a step energy of the order

  16. Engineering of AlGaN-Delta-GaN Quantum-Well Gain Media for Mid-and Deep-Ultraviolet Lasers

    E-Print Network [OSTI]

    Gilchrist, James F.

    Engineering of AlGaN-Delta-GaN Quantum-Well Gain Media for Mid- and Deep-Ultraviolet Lasers Volume.1109/JPHOT.2013.2248705 1943-0655/$31.00 Ó2013 IEEE #12;Engineering of AlGaN-Delta-GaN Quantum-Well Gain@Lehigh.Edu). Abstract: The gain characteristics of AlGaN-delta-GaN quantum wells (QWs) with varying delta-GaN positions

  17. 22753Federal Register / Vol. 77, No. 74 / Tuesday, April 17, 2012 / Proposed Rules Public Involvement

    E-Print Network [OSTI]

    , and impacts to be addressed in an EIS, and for identifying the significant issues related to the proposed this notice, NMFS is notifying the public that an EIS and decision-making process for this proposed action.noaa.gov/ sustainablefisheries/sslpm/eis/. Please visit this Web site for more information on this EIS and for guidance

  18. Recent progress in InGaAsSb/GaSb TPV devices

    SciTech Connect (OSTI)

    Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

    1996-05-01T23:59:59.000Z

    AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

  19. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

    2014-09-26T23:59:59.000Z

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  20. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Haj?asz, M., E-mail: m.hajlasz@m2i.nl [Materials innovation institute (M2i), Mekelweg 2, 2628 CD, Delft (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); Gravesteijn, D. J. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Rietveld, F. J. R. [NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen (Netherlands); Schmitz, J. [MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands)

    2014-06-16T23:59:59.000Z

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  1. TEM and HRXRD Analysis of LP MOVPE Grown InGaP/GaAs epilayers

    SciTech Connect (OSTI)

    Pelosi, Claudio; Bosi, Matteo; Attolini, Giovanni; Germini, Fabrizio; Frigeri, Cesare [CNR-IMEM Institute, Parco Area delle Scienze 37a, Loc Fontanini 43010 Parma (Italy); Prutskij, Tatiana [Instituto de Ciencias, BUAP, Privada 17 Norte, no. 3417, colSanMiguel Hueyotlipan, 72050 Puebla, Pue. (Mexico)

    2007-04-10T23:59:59.000Z

    The diffusion phenomena at interfaces between GaAs/InGaP layers grown by low pressure MOVPE have been studied by dark field (DF) transmission Electron Microscopy (TEM) and High resolution X-ray Diffractometry (HRXRD). By comparing the results of the two techniques a mismatched layer containing P or P and In has been evidenced. The causes of this behavior are briefly discussed.

  2. InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening

    SciTech Connect (OSTI)

    Glauser, Marlene; Mounir, Christian; Rossbach, Georg; Feltin, Eric; Carlin, Jean-François; Butté, Raphaël; Grandjean, Nicolas [École Polytechnique Fédérale de Lausanne (EPFL), Institute of Condensed Matter Physics, CH-1015 Lausanne (Switzerland)

    2014-06-21T23:59:59.000Z

    Contrary to the case of III-nitride based visible light-emitting diodes for which the inhomogeneous linewidth broadening characteristic of InGaN-based multiple quantum well (MQW) heterostructures does not appear as a detrimental parameter, such a broadening issue can prevent a microcavity (MC) system entering into the strong light-matter coupling regime (SCR). The impact of excitonic disorder in low indium content (x???0.1) In{sub x}Ga{sub 1–x}N/GaN MQW active regions is therefore investigated for the subsequent realization of polariton laser diodes by considering both simulations and optical characterizations. It allows deriving the requirements for such MQWs in terms of absorption, emission linewidth, and Stokes shift. Systematic absorption-like and photoluminescence (PL) spectroscopy experiments are performed on single and multiple In{sub 0.1}Ga{sub 0.9}N/GaN quantum wells (QWs). Micro-PL mappings reveal a low temperature PL linewidth of ?30?meV, compatible with SCR requirements, for single QWs for which the microscopic origin responsible for this broadening is qualitatively discussed. When stacking several InGaN/GaN QWs, a departure from such a narrow linewidth value and an increase in the Stokes shift are observed. Various possible reasons for this degradation such as inhomogeneous built-in field distribution among the QWs are then identified. An alternative solution for the MC design to achieve the SCR with the InGaN alloy is briefly discussed.

  3. Rapid Communications Strong piezoelectricity in individual GaN nanowires

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    Rapid Communications Strong piezoelectricity in individual GaN nanowires Majid Minary@northwestern.edu (Received 12 July 2011; accepted 15 September 2011) Abstract GaN nanowires are promising building blocks piezoelectricity in individual single-crystal GaN nanowires revealed by direct measurement of the piezoelectric

  4. GaN Radiation Detectors for Particle Physics and

    E-Print Network [OSTI]

    Glasgow, University of

    GaN Radiation Detectors for Particle Physics and Synchrotron Applications James Paul Grant and monitoring applications. Gallium nitride (GaN) was investigated as a radiation hard particle detector diameter on three epitaxial GaN wafers grown on a sapphire sub- strate. Two of the wafers were obtained

  5. New Faces of GaN: Growth, Doping and Devices

    E-Print Network [OSTI]

    California at Santa Barbara, University of

    New Faces of GaN: Growth, Doping and Devices James S. Speck Materials Department University of California Santa Barbara, CA LEO of a-GaN from circular opening Engineering Insights 2006 #12;#12;Personnel. Wraback (ARL) $$$ JST ­ ERATO UCSB SSLDC AFOSR ONR #12;Reversed direction of polarization Bulk GaN

  6. Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

    SciTech Connect (OSTI)

    Perez-Tomas, A.; Fontsere, A.; Llobet, J. [IMB-CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, CAT (Spain); Placidi, M. [IREC, Jardins Dones de Negre 1, 08930 Sant Adria de Besos, Barcelona (Spain); Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Baron, N. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); PICOGIGA International, Pl M. Rebuffat, Courtaboeuf 7, 91140 Villejust (France)

    2013-05-07T23:59:59.000Z

    The vertical bulk (drain-bulk) current (I{sub db}) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I{sub db} (25-300 Degree-Sign C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E{sub a}), the (soft or destructive) vertical breakdown voltage (V{sub B}), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E{sub a} = 0.35 eV at T = 25-300 Degree-Sign C; V{sub B} = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E{sub a} = 2.5 eV at T > 265 Degree-Sign C; V{sub B} > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E{sub a} = 0.35 eV at T > 150 Degree-Sign C; V{sub B} = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

  7. Environmental Assessment of Remedial Action at the Riverton Uranium Mill Tailings Site, Riverton, Wyoming

    SciTech Connect (OSTI)

    none,

    1987-06-01T23:59:59.000Z

    The US Department of Energy (DOE) has prepared an environmental assessment (DOE/EA-0254) on the proposed remedial action at the inactive uranium milling site near Riverton, Wyoming. Based on the analyses in the EA, the DOE has determined that the proposed action does not constitute a major Federal action significantly affecting the quality of the human environment within the meaning of the National Environmental Policy Act (NEPA) of 1969 (42 U.S.C. 4321, et seq.). Therefore, the preparation of an environmental impact statement (EIS) is not required.

  8. Sandia National Laboratories: International Smart Grid Action...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Smart Grid Action Network Mesa del Sol Project Is Finalist for International Smart Grid Action Network 2014 Award of Excellence On July 31, 2014, in Distribution Grid Integration,...

  9. Energy Agency Coordinators for Energy Action Month

    Broader source: Energy.gov [DOE]

    Agency coordinators serve as primary Federal agency points of contact for Energy Action Month. Contact them if you have questions about implementing an Energy Action Month campaign.

  10. Worldwide Energy Efficiency Action through Capacity Building...

    Open Energy Info (EERE)

    and Training (WEACT) Jump to: navigation, search Logo: Worldwide Energy Efficiency Action through Capacity Building and Training (WEACT) Name Worldwide Energy Efficiency Action...

  11. Ecology Action: Small Market Advanced Retrofit Transformation...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Ecology Action: Small Market Advanced Retrofit Transformation Program - 2015 Peer Review Ecology Action: Small Market Advanced Retrofit Transformation Program - 2015 Peer Review...

  12. PROPOSED ENERGY PROVISIONS OF THE

    E-Print Network [OSTI]

    PROPOSED ENERGY PROVISIONS OF THE CALIFORNIA GREEN BUILDING STANDARDS CODE PART 11 OF THE CALIFORNIA BUILDING CODE (also known as CalGreen) OCTOBER 2012 CEC400201201215DAY CALIFORNIA ENERGY;Proposed Energy Provisions of the California Green Building Standards Code Page 3 CHAPTER 4, RESIDENTIAL

  13. MSENGR Product Design Program Proposal

    E-Print Network [OSTI]

    Prinz, Friedrich B.

    MSENGR Product Design Program Proposal Rev 6/2007 p. 1 New Proposal Revision First graduate Language 3 ME216A Advanced Product Design: Need Finding 4 ME312 Advanced Product Design: Form Giving 4 ARTSTUDI160 Design II: The Bridge 3 ME216B Advanced Product Design: Implementation 4 ME316

  14. A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+

    E-Print Network [OSTI]

    McKittrick, Joanna

    A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

  15. Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

    E-Print Network [OSTI]

    improve the room-temperature carrier mobility in wurtzite AlN/GaN/AlN heterostructures, which is limited consider a narrow groove made of InxGa1-xN with small In content x inside a wurtzite AlN/GaN/AlN heteroN 2 nm /GaN 3 nm /AlN 3 nm . A well-known feature of wurtzite heterostructures is a strong buit

  16. Growth of GaN on porous SiC and GaN substrates C. K. Inoki1

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Growth of GaN on porous SiC and GaN substrates C. K. Inoki1 , T. S. Kuan1 , Ashutosh Sagar2 , C, Albuquerque, NM 87185 4 Beckman Institute, University of Illinois, Urbana, IL 61801 GaN films were grown on porous SiC and GaN templates using both plasma-assisted molecular beam epitaxy (PAMBE) and metal

  17. Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer

    E-Print Network [OSTI]

    Ozbay, Ekmel

    N buffer layer BL grown on an Al2O3 substrate and an AlN IL grown under the AlGaN ternary layer TL. In the present study, we investigate the effects of an AlN BL on an Al2O3 substrate and an AlN IL between an AlGaNStructural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer

  18. Deconstructing (2,0) Proposals

    E-Print Network [OSTI]

    N. Lambert; C. Papageorgakis; M. Schmidt-Sommerfeld

    2013-06-27T23:59:59.000Z

    We examine the relationships between three proposals for the six-dimensional (2,0) theory: the DLCQ of hep-th/9707079, hep-th/9712117, the deconstruction prescription of hep-th/0110146, and the five-dimensional maximally supersymmetric Yang-Mills proposal of 1012.2880, 1012.2882. We show that hep-th/0110146 gives a deconstruction of five-dimensional maximally supersymmetric Yang-Mills. The proposal of hep-th/9707079, hep-th/9712117 uses a subset of the degrees of freedom of five-dimensional Yang-Mills and we show that compactification of it on a circle of finite radius agrees with the DLCQ arising from the proposal of 1012.2880, 1012.2882 or from the deconstruction proposal of hep-th/0110146.

  19. Corrective Action Decision Document for Corrective Action Unit 562: Waste Systems Nevada Test Site, Nevada, Revision 0

    SciTech Connect (OSTI)

    Mark Krause

    2010-08-01T23:59:59.000Z

    This Corrective Action Decision Document (CADD) presents information supporting the selection of corrective action alternatives (CAAs) leading to the closure of Corrective Action Unit (CAU) 562, Waste Systems, in Areas 2, 23, and 25 of the Nevada Test Site, Nevada. This complies with the requirements of the Federal Facility Agreement and Consent Order (FFACO) that was agreed to by the State of Nevada; U.S. Department of Energy (DOE), Environmental Management; U.S. Department of Defense; and DOE, Legacy Management. Corrective Action Unit 562 comprises the following corrective action sites (CASs): • 02-26-11, Lead Shot • 02-44-02, Paint Spills and French Drain • 02-59-01, Septic System • 02-60-01, Concrete Drain • 02-60-02, French Drain • 02-60-03, Steam Cleaning Drain • 02-60-04, French Drain • 02-60-05, French Drain • 02-60-06, French Drain • 02-60-07, French Drain • 23-60-01, Mud Trap Drain and Outfall • 23-99-06, Grease Trap • 25-60-04, Building 3123 Outfalls The purpose of this CADD is to identify and provide the rationale for the recommendation of CAAs for the 13 CASs within CAU 562. Corrective action investigation (CAI) activities were performed from July 27, 2009, through May 12, 2010, as set forth in the CAU 562 Corrective Action Investigation Plan. The purpose of the CAI was to fulfill the following data needs as defined during the data quality objective (DQO) process: • Determine whether COCs are present. • If COCs are present, determine their nature and extent. • Provide sufficient information and data to complete appropriate corrective actions. A data quality assessment (DQA) performed on the CAU 562 data demonstrated the quality and acceptability of the data for use in fulfilling the DQO data needs. Analytes detected during the CAI were evaluated against appropriate final action levels (FALs) to identify the COCs for each CAS. The results of the CAI identified COCs at 10 of the 13 CASs in CAU 562, and thus corrective action is required. Assessment of the data generated from investigation activities conducted at CAU 562 is shown in Table ES-1. Based on the evaluation of analytical data from the CAI, review of future and current operations at the 13 CASs, and the detailed and comparative analysis of the potential CAAs, the following corrective actions are recommended for CAU 562. • No further action is the preferred corrective action for CASs 02-60-01, 02-60-06, and 02-60-07. • Clean closure is the preferred corrective action for CASs 02-26-11, 02-44-02, 02-59-01, 02-60-02, 02-60-03, 02-60-04, 02-60-05, 23-60-01, 23-99-06, and 25-60-04. The preferred CAAs were evaluated on technical merit focusing on performance, reliability, feasibility, safety, and cost. The alternatives were judged to meet all requirements for the technical components evaluated. The alternatives meet all applicable federal and state regulations for closure of the site and will reduce potential exposures to contaminated media to acceptable levels. The DOE, National Nuclear Security Administration Nevada Site Office provides the following recommendations: • No further corrective action is required at CASs 02-60-01, 02-60-06, and 02-60-07. • Clean closure is recommended for the remaining 10 CASs in CAU 562. • A Corrective Action Plan will be submitted to the Nevada Division of Environmental Protection that contains a detailed description of the proposed actions that will be taken to implement the selected corrective actions.

  20. From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

    SciTech Connect (OSTI)

    Fisichella, G. [CNR-IMM, Strada VIII, 5, 95121 Catania (Italy); Department of Electronic Engineering, University of Catania, 95124 Catania (Italy); Greco, G.; Roccaforte, F.; Giannazzo, F. [CNR-IMM, Strada VIII, 5, 95121 Catania (Italy)

    2014-08-11T23:59:59.000Z

    The electrical behaviour of graphene (Gr) contacts to Al{sub x}Ga{sub 1?x}N/GaN heterostructures has been investigated, focusing, in particular, on the impact of the AlGaN microstructure on the current transport at Gr/AlGaN interface. Two Al{sub 0.25}Ga{sub 0.75}N/GaN heterostructures with very different quality in terms of surface roughness and defectivity, as evaluated by atomic force microscopy (AFM) and transmission electron microscopy, were compared in this study, i.e., a uniform and defect-free sample and a sample with a high density of typical V-defects, which locally cause a reduction of the AlGaN thickness. Nanoscale resolution current voltage (I-V) measurements by an Au coated conductive AFM tip were carried out at several positions both on the bare and Gr-coated AlGaN surfaces. Rectifying contacts were found onto both bare AlGaN surfaces, but with a more inhomogeneous and lower Schottky barrier height (?{sub B}???0.6?eV) for AlGaN with V-defects, with respect to the case of the uniform AlGaN (?{sub B}???0.9?eV). Instead, very different electrical behaviours were observed in the presence of the Gr interlayer between the Au tip and AlGaN, i.e., a Schottky contact with reduced barrier height (?{sub B} ? 0.4?eV) for the uniform AlGaN and an Ohmic contact for the AlGaN with V-defects. Interestingly, excellent lateral uniformity of the local I-V characteristics was found in both cases and can be ascribed to an averaging effect of the Gr electrode over the AlGaN interfacial inhomogeneities. Due to the locally reduced AlGaN layer thickness, V defect act as preferential current paths from Gr to the 2DEG and can account for the peculiar Ohmic behaviour of Gr contacts on defective AlGaN.

  1. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01T23:59:59.000Z

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  2. X-ray diffraction analysis of InGaP/GaAs heterointerfaces grown by metalorganic chemical vapor deposition

    SciTech Connect (OSTI)

    Nittono, T.; Hyuga, F. [NTT System Electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-01 (Japan)] [NTT System Electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-01 (Japan)

    1997-03-01T23:59:59.000Z

    InGaP/GaAs heterointerfaces grown by metalorganic chemical vapor deposition have been characterized by a high-resolution x-ray diffraction analysis of multiple quantum well structures. The flow of AsH{sub 3} to InGaP surface produces an InGaAs-like interfacial layer at the GaAs-on-InGaP interface, indicating P atoms of the InGaP surface are easily replaced by As atoms. The flow of PH{sub 3} to GaAs surface, on the other hand, does not make any detectable interfacial layer, indicating that almost no As atoms of the GaAs surface are replaced by P atoms. It is also found that the flow of trimethylgallium (TMG) to the InGaP surface produces a GaP-like interfacial layer. This interfacial layer is probably formed by the reaction between TMG and excessive P atoms on the InGaP surface or residual PH{sub 3} in the growth chamber. {copyright} {ital 1997 American Institute of Physics.}

  3. Physica B 376377 (2006) 486490 Preferential substitution of Fe on physically equivalent Ga sites in GaN

    E-Print Network [OSTI]

    Nabben, Reinhard

    2006-01-01T23:59:59.000Z

    in GaN W. GehlhoffÃ, D. Azamat1 , U. Haboeck, A. Hoffmann Institute for Solid State Physics, Technical freestanding hydride vapor phase grown GaN have been studied in the X- and Q-band. A complex resonance pattern with C3v symmetry in the wurtzite structure of GaN. Aside from the displacement of their magnetic axis

  4. Superluminescence in Green Emission GaInN/GaN Quantum Well Structures under Pulsed Laser Excitation

    E-Print Network [OSTI]

    Wetzel, Christian M.

    and bulk GaN substrates, respectively. Under intense pulsed photo excitation, we observed strong the same excitation conditions, the blue shift for the m-axis grown structure on bulk GaN substrate is less-plane sapphire substrate and along the non-polar m-axis on m-plane bulk GaN substrate. The frequently used

  5. RCRA corrective action: Action levels and media cleanup standards

    SciTech Connect (OSTI)

    Not Available

    1995-02-01T23:59:59.000Z

    This Information Brief describes how action levels (ALs), which are used to determine if it is necessary to perform a Corrective Measures Study (CMS), and media cleanup standards (MCSs), which are used to set the standards for remediation performed in conjunction with Corrective Measures Implementation (CMI) are set. It is one of a series of Information Briefs on RCRA Corrective Action. ALs are health-and-environmentally-based levels of hazardous constituents in ground water, surface water, soil, or air, determined to be indicators for protection of human health and the environment. In the corrective action process, the regulator uses ALs to determine if the owner/operator of a treatment, storage, or disposal facility is required to perform a CMS.

  6. Composition and Interface Analysis of InGaN/GaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography

    SciTech Connect (OSTI)

    Liu, Fang; Huang, Li; Davis, Robert F.; Porter, Lisa M.; Schreiber, Daniel K.; Kuchibhatla, S. V. N. T.; Shutthanandan, V.; Thevuthasan, Suntharampillai; Preble, Edward; Paskova, Tanya; Evans, K. R.

    2014-09-04T23:59:59.000Z

    In0.20Ga0.80N/GaN multi-quantum wells grown on [0001]-oriented GaN substrates with and without an InGaN buffer layer were characterized using three-dimensional atom probe tomography. In all samples, the upper interfaces of the QWs were slightly more diffuse than the lower interfaces. The buffer layers did not affect the roughness of the interfaces within the quantum well structure, a result attributed to planarization of the surface of the 1st GaN barrier layer which had an average root-mean-square roughness of 0.177 nm. The In and Ga distributions within the MQWs followed the expected distributions for a random alloy with no indications of In clustering.

  7. Point defect balance in epitaxial GaSb

    SciTech Connect (OSTI)

    Segercrantz, N., E-mail: natalie.segercrantz@aalto.fi; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FIN-00076 Aalto Espoo (Finland); Song, Y.; Wang, S. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Göteborg (Sweden); State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 865 Changning Road, Shanghai 200050 (China)

    2014-08-25T23:59:59.000Z

    Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

  8. Protective actions as a factor in power reactor siting

    SciTech Connect (OSTI)

    Gant, K.S.; Schweitzer, M.

    1984-06-01T23:59:59.000Z

    This report examines the relationship between a power reactor site and the ease of implementing protective actions (emergency measures a serious accident). Limiting populating density around a reactor lowers the number of people at risk but cannot assure that all protective actions are possible for those who reside near the reactor. While some protective measures can always be taken (i.e., expedient respiratory protection, sheltering) the ability to evacuate the area or find adequate shelter may depend on the characteristics of the area near the reactor site. Generic siting restrictions designed to identify and eliminate these site-specific constraints would be difficult to formulate. The authors suggest identifying possible impediments to protective actions at a proposed reactor site and addressing these problems in the emergency plans. 66 references, 6 figures, 8 tables.

  9. Room-temperature cw operation of InGaAsP/InGaP lasers at 727 nm grown on GaAs substrates by liquid phase epitaxy

    SciTech Connect (OSTI)

    Wakao, K.; Nishi, H.; Kusunoki, T.; Isozumi, S.; Ohsaka, S.

    1984-06-01T23:59:59.000Z

    InGaAsP/InGaP lasers emitting at 724--727 nm have been fabricated on GaAs substrates using liquid phase epitaxy. The threshold current is reduced to 8 kA/cm/sup 2/ by thinning the active layer. Room-temperature cw operation is achieved for the first time in the lasing wavelength range below 760 nm in this quaternary system.

  10. Self-assembled In0.5Ga0.5As quantum dots on GaP Yuncheng Song,a

    E-Print Network [OSTI]

    Haller, Gary L.

    SAQDs . Several groups have investigated the growth of both InP and In-rich InGaP SAQDs on GaP.7­12 Most temperature operation of vis- ible light emitting diodes LEDs using InP/GaP and InGaP/ GaP SAQDs, respectively

  11. Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns

    E-Print Network [OSTI]

    Jahns, Jürgen

    Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J spreading in a mesa-structure GaN-based LED grown on an insulating or semi-insulating substrate. (b. Jahns Current crowding in mesa-structure GaInN/GaN light-emitting diodes (LEDs) grown on insulating

  12. Gas-source molecular beam epitaxial growth and characterization of the (Al,In,Ga)NP/GaP material system and Its applications to light-emitting diodes

    E-Print Network [OSTI]

    Odnoblyudov, Vladimir

    2006-01-01T23:59:59.000Z

    ? G, Kcal/mol GaP GaN AlN o Substrate temperature, C Figurenm-thick GaN 0.006 P 0.994 layer on substrate temperature.substrate temperature for Reactions formation of AlP, GaP, GaN and

  13. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 51, NO. 2, FEBRUARY 2003 653 AlGaN/GaN HFET Power Amplifier Integrated With

    E-Print Network [OSTI]

    Itoh, Tatsuo

    the first demonstration of a GaN-based HFET was done on a sapphire substrate in 1993 [1]­[3]. This is due crystal quality compared to that of the sapphire substrate. Thanks to steadfast progress in AlGaN/GaN HFETIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 51, NO. 2, FEBRUARY 2003 653 AlGaN/GaN

  14. Tunable THz plasmon resonances in InGaAs/InP HEMT R. E. Peale*a

    E-Print Network [OSTI]

    Peale, Robert E.

    , high ns, and small m*. A variety of materials systems such as GaAs/AlGaAs [3], InGaP/InGaAs/GaAs [4

  15. Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    fabricated on freestanding GaN substrates T. Koyama and T.on freestanding m-plane GaN substrates. Although the ? inton the freestanding GaN substrate. cause the current was

  16. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12T23:59:59.000Z

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  17. Final voluntary release assessment/corrective action report

    SciTech Connect (OSTI)

    NONE

    1996-11-12T23:59:59.000Z

    The US Department of Energy, Carlsbad Area Office (DOE-CAO) has completed a voluntary release assessment sampling program at selected Solid Waste Management Units (SWMUs) at the Waste Isolation Pilot Plant (WIPP). This Voluntary Release Assessment/Corrective Action (RA/CA) report has been prepared for final submittal to the Environmental protection Agency (EPA) Region 6, Hazardous Waste Management Division and the New Mexico Environment Department (NMED) Hazardous and Radioactive Materials Bureau to describe the results of voluntary release assessment sampling and proposed corrective actions at the SWMU sites. The Voluntary RA/CA Program is intended to be the first phase in implementing the Resource Conservation and Recovery Act (RCRA) Facility Investigation (RFI) and corrective action process at the WIPP. Data generated as part of this sampling program are intended to update the RCRA Facility Assessment (RFA) for the WIPP (Assessment of Solid Waste Management Units at the Waste Isolation Pilot Plant), NMED/DOE/AIP 94/1. This Final Voluntary RA/CA Report documents the results of release assessment sampling at 11 SWMUs identified in the RFA. With this submittal, DOE formally requests a No Further Action determination for these SWMUs. Additionally, this report provides information to support DOE`s request for No Further Action at the Brinderson and Construction landfill SWMUs, and to support DOE`s request for approval of proposed corrective actions at three other SWMUs (the Badger Unit Drill Pad, the Cotton Baby Drill Pad, and the DOE-1 Drill Pad). This information is provided to document the results of the Voluntary RA/CA activities submitted to the EPA and NMED in August 1995.

  18. Influence of Ga content on the structure and anomalous Hall effect of Fe{sub 1?x}Ga{sub x} thin films on GaSb(100)

    SciTech Connect (OSTI)

    Anh Tuan, Duong; Shin, Yooleemi; Viet Cuong, Tran; Cho, Sunglae, E-mail: slcho@ulsan.ac.kr [Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Phan, The-Long [Department of Physics, Chungbuk National University, Cheongju 361-763 (Korea, Republic of)

    2014-05-07T23:59:59.000Z

    The Fe{sub 1?x}Ga{sub x} thin films (x?=?0.4, 0.5) have been grown on GaSb(100) substrate using molecular beam epitaxy. An epitaxial film with bcc ?-Fe crystal structure (A2) is observed in Fe{sub 0.6}Ga{sub 0.4} film, while an impure Fe{sub 3}Ga phase with DO{sub 3} structure is appeared in Fe{sub 0.5}Ga{sub 0.5} film. The saturated magnetizations at room temperature are observed to be 570?emu/cm{sup 3} and 180?emu/cm{sup 3} and the coercivities to be 170 and 364?Oe for Fe{sub 0.6}Ga{sub 0.4} and Fe{sub 0.5}Ga{sub 0.5}, respectively. A hysteresis trend in Hall resistance vs. magnetic field is observed for Fe{sub 0.5}Ga{sub 0.5} film. However, there is a weak hysteresis noticed in Fe{sub 0.4}Ga{sub 0.6} thin film.

  19. Catastrophic degradation of InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy

    SciTech Connect (OSTI)

    Ueda, O.; Wakao, K.; Komiya, S.; Yamaguchi, A.; Isozumi, S.; Umebu, I.

    1985-12-01T23:59:59.000Z

    Catastrophically degraded InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy, emitting at 727 and 810 nm are investigated by photoluminescence topography, scanning electron microscopy, transmission electron microscopy, and energy dispersive x-ray spectroscopy. The degradation is mainly due to catastrophic optical damage at the facet, i.e., development of <110> dark-line defects from the facet, and rarely due to catastrophic optical damage at some defects, i.e., development of <110> dark-line defects from the defects inside the stripe region. These <110> dark-line defects correspond to complicated dislocation networks connected with dark knots, and are quite similar to those observed in catastrophically degraded GaAlAs/GaAs double-heterostructure lasers. The degradation characteristics of the InGaAsP/InGaP double-heterostructure lasers are rather similar to those in GaAlAs/GaAs double-heterostructure lasers concerning the catastrophic degradation.

  20. Dynamics of thermalization in GaInN/GaN quantum wells grown on ammonothermal GaN

    SciTech Connect (OSTI)

    Binder, J.; Korona, K. P.; Wysmo?ek, A.; Kami?ska, M. [Faculty of Physics, University of Warsaw, ul. Hoza 69, 00-681 Warsaw (Poland); Köhler, K.; Kirste, L.; Ambacher, O. [Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg (Germany); Zaj?c, M.; Dwili?ski, R. [AMMONO SA, Czerwonego Krzy?a 2/31, 00-377 Warsaw (Poland)

    2013-12-14T23:59:59.000Z

    In this work, we present measurements of the dynamics of photoexcited carriers in GaInN/GaN quantum wells (QWs) grown on ammonothermal GaN, especially thermalization and recombination rates. Emission properties were measured by time-resolved photoluminescence (PL) and electroluminescence spectroscopy. Due to the use of high quality homoepitaxial material, we were able to obtain very valuable data on carrier thermalization. The temperature dependence of the QW energy observed in PL shows characteristic S-shape with a step of about 10?meV. Such a behavior (related to thermalization and localization at potential fluctuations) is often reported for QWs; but in our samples, the effect is smaller than in heteroepitaxial InGaN/GaN QWs due to lower potential fluctuation in our material. Absorption properties were studied by photocurrent spectroscopy measurements. A comparison of emission and absorption spectra revealed a shift in energy of about 60?meV. Contrary to PL, the QW energy observed in absorption decreases monotonically with temperature, which can be described by a Bose-like dependence E(T)?=?E(0) ? ?/(exp(?/T) ? 1), with parameters ??=?(0.11?±?0.01) eV, ??=?(355?±?20)?K, or by a Varshni dependence with coefficients ??=?(10?±?3) × 10{sup ?4}?eV/K and ??=?(1500?±?500) K. Taking into account absorption and emission, the fluctuation amplitude (according to Eliseev theory) was ??=?14?meV. The time resolved PL revealed that in a short period (<1?ns) after excitation, the PL peaks were broadened because of the thermal distribution of carriers. We interpreted this distribution in terms of quasi-temperature (T{sub q}) of the carriers. The initial T{sub q} was of the order of 500?K. The thermalization led to a fast decrease of T{sub q}. The obtained cooling time in the QW was ?{sub C}?=?0.3?ns, which was faster than the observed recombination time ?{sub R}?=?2.2?ns (at 4?K)

  1. Remedial Action Contacts Directory - 1997

    SciTech Connect (OSTI)

    NONE

    1997-05-01T23:59:59.000Z

    This document, which was prepared for the US Department of Energy (DOE) Office of Environmental Restoration (ER), is a directory of 2628 individuals interested or involved in environmental restoration and/or remedial actions at radioactively contaminated sites. This directory contains a list of mailing addresses and phone numbers of DOE operations, area, site, project, and contractor offices; an index of DOE operations, area, site, project, and contractor office sorted by state; a list of individuals, presented by last name, facsimile number, and e-mail address; an index of affiliations presented alphabetically, with individual contacts appearing below each affiliation name; and an index of foreign contacta sorted by country and affiliation. This document was generated from the Remedial Action Contacts Database, which is maintained by the Remedial Action Program Information Center (RAPIC).

  2. Chiral supergravity actions and superforms

    SciTech Connect (OSTI)

    Gates, S. J. Jr.; Tartaglino-Mazzucchelli, G. [Center for String and Particle Theory, Department of Physics, University of Maryland College Park, Maryland 20742-4111 (United States); Kuzenko, S. M. [School of Physics M013, The University of Western Australia 35 Stirling Highway, Crawley W.A. 6009 (Australia)

    2009-12-15T23:59:59.000Z

    The superform construction of supergravity actions, christened the 'ectoplasm method', is based on the use of a closed super d-form in the case of d space-time dimensions. In known examples, such superforms are obtained by iteratively solving nontrivial cohomological problems. The latter usually makes this scheme no less laborious than the normal coordinate method for deriving component actions for matter-coupled supergravity. In this paper we present an alternative procedure to generate required superforms in four space-time dimensions, which makes use of self-dual vector multiplets. It provides the shortest derivation of chiral actions in two different theories: (i) N=1 old minimal supergravity; and (ii) N=2 conformal supergravity. The N=2 superform construction is developed here for the first time. Although our consideration is restricted to the case of four dimensions, a generalization to higher dimensions is plausible.

  3. CEQ Guidance on the Application of NEPA to Proposed Federal Actions...

    Energy Savers [EERE]

    arises in the context of negotiations undertaken with the governments of Mexico and Canada to develop an agreement on transboundary environmental impact assessment in North...

  4. CEQ Guidance on the Application of NEPA to Proposed Federal Actions in the

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742Energy China U.S. Department ofJune 2,The BigSidingState6 (2-91)A2015 PeerUnited States with

  5. EIS-0385: Notice of Proposed Floodplain and Wetland Actions | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't Your Destiny:Revised FindingDepartment of Energy : Notice ofRecord ofDraftFinalDepartment

  6. Transcript of Proceedings: Quarry Waste Removal Proposed Plan Weldon Spring Site Remedial Action Projec

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTableSelling7 AugustAFRICAN3uj: ;;IDEC. i' , iiU i.1 '7,

  7. Environmental Assessment for Conducting Astrophysics and Other Basic Science Experiments - Chapter 2 Proposed Action and Alternatives

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power AdministrationField8, 2000ConsumptionInnovationEnvironment,682 DOE has prepared a2-1 CHAPTER

  8. Proposal of Removal Action in the Southeast Drainage. SE-200-201-1.07.

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTableSelling7 AugustAFRICAN3u ;;;:: A' 3 ct : -. . . .~. .'.

  9. Proposals For Four Interim Response Actions. IR-600-604-1.01.

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTableSelling7 AugustAFRICAN3u ;;;:: A' 3 ct : -. . . .~. .'.

  10. Proposed Interim Response Action, Construction of Ash Pond Isolation System at the Weldon Spring Site.

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTableSelling7 AugustAFRICAN3u ;;;:: A' 3 ct : -. . . .~. .'.

  11. Quarry Waste Removal Proposed Plan Weldon Spring Site Remedial Action Project, Weldon Spring Missouri.

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTableSelling7 AugustAFRICAN3u ;;;:: A' 3 ct : -. . . .~.Q

  12. Title 40 CFR 1502.14 Alternatives Including the Proposed Action | Open

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries PvtStratosolarTharaldson EthanolTillson,OpenOpen EnergyR. 297water0 CFREnergy

  13. Description of Proposed Interim Remedial Action at the Weldon Spring Site.

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTableSelling CorpNew 1325.8. (8-89)p,Departtient,of Endrgy

  14. Letter: EPA has reviewed the DOE's proposals for the following four interim response actions

    Office of Legacy Management (LM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group currentBradleyTableSelling CorpNewCF INDUSTRIES,L? .-I I2 m.m\ LILTS PlanI9

  15. Appliance Standard Program - The FY 2003 Priority -Setting Summary Report and Actions Proposed

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't Your Destiny: The Future of1Albuquerque, NMPerformanceofEnergyManagementEnergy, LLCAppliance

  16. Appliance Standard Program - The FY 2003 Priority -Setting Summary Report and Actions Proposed - Appendix B

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't Your Destiny: The Future of1Albuquerque, NMPerformanceofEnergyManagementEnergy,

  17. Appliance Standards Program - The FY 2003 Priority Setting Report and Actions Proposed - Appendix C

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't Your Destiny: The Future of1Albuquerque,

  18. Appliance Standards Program - The FY 2003 Priority Setting Report and Actions Proposed -Appendix A

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't Your Destiny: The Future of1Albuquerque,APPENDIX A: Technical Support Document (TSD) Appendixes

  19. Distributed Integral Action: Stability Analysis and Frequency Control of Power Systems

    E-Print Network [OSTI]

    Johansson, Karl Henrik

    propose a fully decentralized frequency control algorithm for electrical power systems. We model the powerDistributed Integral Action: Stability Analysis and Frequency Control of Power Systems Martin frequency control of electrical power systems. We show that the proposed algorithm can attenuate step

  20. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure

    SciTech Connect (OSTI)

    Barbosa, B. G.; Arakaki, H.; Souza, C. A. de; Pusep, Yu. A. [Instituto de Fisica de São Carlos, Universidade de São Paulo, 13560-970 Sao Carlos, SP (Brazil)

    2014-03-21T23:59:59.000Z

    Photoluminescence was studied in GaAs/AlGaAs nanowires (NWs) with different radial heterostructures. We demonstrated that manipulation of the emission energy may be achieved by appropriate choice of the shell structure. The emission at highest energy is generated in the NWs with tunneling thin AlGaAs inner shell and thin GaAs outer shell due to recombination of the photoexcited electrons confined in the outer shell with the holes in the core. Lower energy emission was shown to occur in the NWs with thick outer shell grown in the form of a short-period GaAs/AlGaAs multiple quantum well structure. In this case, the tunneling probability through the multiple quantum wells controls the energy emitted by the NWs. The doping of core results in dominated low energy emission from the GaAs core.

  1. Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire

    SciTech Connect (OSTI)

    Du, Chunhua; Ma, Ziguang; Zhou, Junming; Lu, Taiping; Jiang, Yang; Jia, Haiqiang; Liu, Wuming; Chen, Hong, E-mail: hchen@iphy.ac.cn [Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-04-14T23:59:59.000Z

    The asymmetric dual-wavelength (green/blue) coupled InGaN/GaN multiple quantum wells were proposed to modulate the green emission intensity. Electroluminescent measurements demonstrate the conspicuous increment of the green light intensity by decreasing the coupled barrier thickness. This was partly attributed to capture of more carriers when holes tunnel across the thinner barrier from the blue quantum wells, as a hole reservoir, to the green quantum wells. While lower effective barrier height of the blue quantum wells benefits improved hole transportation from p-GaN to the active region. Efficiency droop of the green quantum wells was partially alleviated due to the enhanced injection efficiency of holes.

  2. Graphene membranes and the Dirac-Born-Infeld action

    E-Print Network [OSTI]

    James Babington

    2011-07-08T23:59:59.000Z

    We propose the use of the Dirac-Born-Infeld action in the phenomenological description of graphene sheet dynamics and interactions. Both the electronic properties of the Dirac fermions and the overall dynamics can be incorporated into this model. Classical static configurations, as well as quantum fluctuations of the membrane degrees of freedom can be studied in this framework. This makes it an interesting tool for Casimir physics and novel QED processes.

  3. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01T23:59:59.000Z

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  4. Mn Occupations in Ga1-xMnxN Dilute Magnetic Semiconductors Probed by X-Ray Absorption Near-Edge Structure Spectroscopy

    SciTech Connect (OSTI)

    Wei Shiqiang; Yan Wensheng; Sun Zhihu; Liu Qinghua; Zhong Wenjie [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029 (China); Zhang Xinyi [Department of Physics, Surface Physics Laboratory (National Key Laboratory), Fudan University, 220 Handan Road, Shanghai 200433 (China); Synchrotron Radiation Research Center, Fudan University, 220 Handan Road, Shanghai 200433 (China); Oyanagi, H. [Photonics Research Institute, National Institute of Advanced Industrial Science and Technology 1-1-1 Umezono Tsukuba, Ibaraki 305-8568 (Japan); Wu Ziyu [Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039 (China)

    2007-02-02T23:59:59.000Z

    X-ray absorption near-edge structure (XANES) is used to study the characteristics of different sites of Mn in the Ga1-xMnxN dilute magnetic semiconductor (DMS) with zinc-blende structure. The XANES spectra of representative Mn occupation sites (substitutional MnGa, interstitial MnI, MnGa-MnI dimer and Mn cluster) in GaN lattice are theoretically calculated and compared with experimental results. The substitutional Mn in GaN is characterized by a pre-edge peak at 2.0 eV and a post-edge multiple-scattering peak at 29.1 eV. The peaks shift in position and drop in intensity dramatically for the interstitial MnI and MnGa-MnI dimmer, and disappear completely for Mn clusters. We propose that the distinct characteristics of Mn K-edge XANES spectra for different Mn sites favor to discriminate Mn occupations in GaMnN DMS.

  5. Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and reflection high-energy electron diffraction

    E-Print Network [OSTI]

    Brown, J S; Koblmuller, G; Wu, F; Averbeck, R; Riechert, H; Speck, J S

    2006-01-01T23:59:59.000Z

    PA-MBE GaN growth conditions, with substrate temperatures ofthe GaN surface roughness evolution, substrate vicinality,vapor and substrate temperature could form the basis for GaN

  6. Exploiting Processor Groups to Extend Scalability of the GA Shared Memory Programming Model

    SciTech Connect (OSTI)

    Nieplocha, Jarek; Krishnan, Manoj Kumar; Palmer, Bruce J.; Tipparaju, Vinod; Zhang, Yeliang

    2005-05-04T23:59:59.000Z

    Exploiting processor groups is becoming increasingly important for programming next-generation high-end systems composed of tens or hundreds of thousands of processors. This paper discusses the requirements, functionality and development of multilevel-parallelism based on processor groups in the context of the Global Array (GA) shared memory programming model. The main effort involves management of shared data, rather than interprocessor communication. Experimental results for the NAS NPB Conjugate Gradient benchmark and a molecular dynamics (MD) application are presented for a Linux cluster with Myrinet and illustrate the value of the proposed approach for improving scalability. While the original GA version of the CG benchmark lagged MPI, the processor-group version outperforms MPI in all cases, except for a few points on the smallest problem size. Similarly, the group version of the MD application improves execution time by 58% on 32 processors.

  7. Refractive index of erbium doped GaN thin films

    SciTech Connect (OSTI)

    Alajlouni, S.; Sun, Z. Y.; Li, J.; Lin, J. Y.; Jiang, H. X., E-mail: hx.jiang@ttu.edu [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States); Zavada, J. M. [Department of Electrical and Computer Engineering, Polytechnic Institute of New York University, Brooklyn, New York 11201 (United States)

    2014-08-25T23:59:59.000Z

    GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540?nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those obtained by conventional growth method of continuous flow of reaction precursors. X-ray diffraction rocking curve linewidths of less than 300?arc sec were achieved for the GaN (0002) diffraction peak, which is comparable to the typical results of undoped high quality GaN epilayers and represents a major improvement over previously reported results for GaN:Er. Spectroscopic ellipsometry was used to determine the refractive index of the GaN:Er epilayers in the 1540?nm wavelength window and a linear dependence on Er concentration was found. The observed refractive index increase with Er incorporation and the improved crystalline quality of the GaN:Er epilayers indicate that low loss GaN:Er optical waveguiding structures are feasible.

  8. Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors

    SciTech Connect (OSTI)

    Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

    1998-10-14T23:59:59.000Z

    GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

  9. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-05-26T23:59:59.000Z

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  10. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Carrington, P. J.; Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

    2014-01-07T23:59:59.000Z

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  11. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

    2014-02-03T23:59:59.000Z

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  12. Intersubband absorption in AlN/GaN/AlGaN coupled quantum wells

    SciTech Connect (OSTI)

    Driscoll, Kristina; Bhattacharyya, Anirban; Moustakas, Theodore D.; Paiella, Roberto; Zhou, Lin; Smith, David J. [Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 Saint Mary's Street, Boston, Massachusetts 02215 (United States); Department of Physics and School of Materials, Arizona State University, Tempe, Arizona 85287 (United States)

    2007-10-01T23:59:59.000Z

    AlN/GaN/AlGaN coupled quantum wells grown by molecular beam epitaxy have been developed and characterized via intersubband absorption spectroscopy. In these structures, an AlGaN layer of sufficiently low Al content is used to achieve strong interwell coupling without the need for ultrathin inner barriers. At the same time, AlN is used in the outer barriers to provide the large quantum confinement required for near-infrared intersubband transitions. The composition of the inner barriers also provides a continuously tunable parameter to control the coupling strength. Double intersubband absorption peaks are measured in each sample, at photon energies in good agreement with theoretical expectations.

  13. Climate Change Action Plan Report

    E-Print Network [OSTI]

    Hansen, Andrew J.

    Climate Change Action Plan Report Intermountain Region 2013 National Park Service Resource Stewardship and Science Landscape Conservation and Climate Change Division #12;About this Report Each National Park Service is responding to the challenge of climate change; and (2) raise awareness among NPS

  14. Unparticle actions and gauge invariance

    SciTech Connect (OSTI)

    Ilderton, Anton [School of Mathematics, Trinity College, Dublin 2 (Ireland)

    2009-01-15T23:59:59.000Z

    We show that the requirement of gauge invariance is not enough to fix the form of interactions between unparticles and gauge fields, thus revealing a wide new class of gauged unparticle actions. Our approach also allows us to construct operators which create gauge invariant colored unparticles. We discuss both their perturbative and nonperturbative properties.

  15. GaN based nanorods for solid state lighting

    SciTech Connect (OSTI)

    Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

    2012-04-01T23:59:59.000Z

    In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

  16. Road Map Team Proposal Form Proposal: CAR32

    E-Print Network [OSTI]

    Suzuki, Masatsugu

    institution. Criteria for ARL membership includes sustained institutional commitment to the library and an increase in #12;database subscriptions due to a higher FTE is challenging the Libraries' ability to sustain of Proposal: Develop a plan for attaining membership in the Association of Research Libraries 3

  17. Reduction of gap states of ternary IIIV semiconductor surfaces by sulfur passivation: Comparative studies of AlGaAs and InGaP

    E-Print Network [OSTI]

    Kim, Sehun

    studies of AlGaAs and InGaP J. M. Seo School of Physics and Technology, Jeonbuk National University on liquid-phase-epitaxy-grown n-type InGaP and AlGaAs surfaces have been studied using x-ray photoelectron treatment in air. For InGaP, sulfur atoms initially reacted with both surface In and Ga atoms and reacted

  18. In0.6Ga0.4AsGaAs quantum-dot infrared photodetector with operating temperature up to 260 K

    E-Print Network [OSTI]

    Florida, University of

    the large band gap material such as AlGaAs or InGaP as blocking barrier to reduce the device dark current 100 K by us- ing a large band gap material such as AlGaAs or InGaP as the blocking barrier to reduce temperature up to 260 K without using the wide band gap AlGaAs or InGaP current blocking bar- rier. The sample

  19. Phase-locking of an InP/InGaP/InGaAs resonant tunneling diode relaxation oscillator by direct optical injection

    E-Print Network [OSTI]

    Eisenstein, Gadi

    Phase-locking of an InP/InGaP/InGaAs resonant tunneling diode relaxation oscillator by direct relaxation oscillator is demonstrated. The diode is an Al-free InP/InGaP/InGaAs structure in the InP/InGaAs/InGaP aluminum-free material system, following the work of Cohen and Ritter [6

  20. Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    the last quantum barrier in InGaN/GaN light-emitting diodes Zabu Kyaw, Zi-Hui Zhang, Wei Liu, Swee Tiam Tan injection and efficiency droop in InGaN/GaN light-emitting diodes with step-stage multiple- quantum distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers Appl. Phys. Lett. 102

  1. IEEE ELECTRON DEVICE LETTERS, VOL. 21, NO. 12, DECEMBER 2000 549 Dual-Gate AlGaN/GaN Modulation-Doped

    E-Print Network [OSTI]

    Rodwell, Mark J. W.

    IEEE ELECTRON DEVICE LETTERS, VOL. 21, NO. 12, DECEMBER 2000 549 Dual-Gate AlGaN/GaN Modulation--We demonstrate dual-gate AlGaN/GaN modula- tion-doped field-effect transistors (MODFETs) with gate-lengths of 0 power amplifiers. Index Terms--AlGaN/GaN, broadband power amplifiers, dual-gate FETs. I. INTRODUCTION

  2. Graded-base InGaN/GaN heterojunction bipolar light-emitting transistors B. F. Chu-Kung,a

    E-Print Network [OSTI]

    Asbeck, Peter M.

    Graded-base InGaN/GaN heterojunction bipolar light-emitting transistors B. F. Chu-Kung,a M. Feng, G; published online 25 August 2006 The authors report radiative recombination from a graded-base InGaN/GaN microwave power has been obtained from GaN field-effect transistors, very few operational GaN-based HBTs

  3. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing://scitation.aip.org/content/aip/journal/apl/105/3?ver=pdfcov Published by the AIP Publishing Articles you may be interested in High efficiency InGaN/GaN (2014); 10.1063/1.4867023 Effect of V-defects on the performance deterioration of InGaN/GaN multiple

  4. Polarized emission lines from A-and B-type excitonic complexes in single InGaN/GaN quantum dots

    E-Print Network [OSTI]

    Nabben, Reinhard

    Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots M Cathodoluminescence measurements on single InGaN/GaN quantum dots QDs are reported. Complex spectra with up to five spectral region have been realized based on InGaN structures.1 Single-photon emission from GaN/AlN quantum

  5. Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate C. Hums, T. Finger, T. Hempel, J. Christen, and A. Dadgara

    E-Print Network [OSTI]

    Nabben, Reinhard

    Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate C. Hums, T. Finger, T. Hempel, J spectra of InGaN/GaN heterostructures and quantum wells epitaxially grown on Si 111 substrates. This Fabry-Perot effect results from the high refractive index contrasts at the GaN/Si and the Air/InGaN interfaces

  6. Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal

    E-Print Network [OSTI]

    Ozbay, Ekmel

    on nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrates prepared by metal undoped Al0.25Ga0.75N/GaN/ AlN heterostructures grown on sapphire substrate. © 2007 Elsevier B.V. All of AlGaN on a thick GaN epilayer on a semi- insulating substrate. Spontaneous and strain induced

  7. Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3CSiC ,,001...

    E-Print Network [OSTI]

    As, Donat Josef

    through the substrate. Cubic AlGaN/GaN heterostructures were grown in a RibeNonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C­SiC ,,001... E HFET was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3C­SiC 001 by molecular beam

  8. Temperature-controlled epitaxy of In{sub x}Ga{sub 1-x}N alloys and their band gap bowing

    SciTech Connect (OSTI)

    Liu, S. T.; Wang, X. Q.; Chen, G.; Zhang, Y. W.; Feng, L.; Huang, C. C.; Xu, F. J.; Tang, N.; Shen, B. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Sang, L. W.; Sumiya, M. [Wide Bandgap Material Group, National Institute for Materials Science, 305-0044, Tsukuba (Japan)

    2011-12-01T23:59:59.000Z

    In{sub x}Ga{sub 1-x}N alloys (0 {<=} x {<=} 1) have been grown on GaN/sapphire templates by molecular beam epitaxy. Growth temperature controlled epitaxy was proposed to modulate the In composition so that each In{sub x}Ga{sub 1-x}N layer was grown at a temperature as high as possible and thus their crystalline quality was improved. The bandgap energies of the In{sub x}Ga{sub 1-x}N alloys have been precisely evaluated by optical transmission spectroscopy, where the effect of residual strain and electron concentration (the Burstein-Moss effect) on the bandgap energy shift has been considered. Finally, a bowing parameter of {approx}1.9 {+-} 0.1 eV has been obtained by the well fitting In-composition dependent bandgap energy.

  9. Structural properties and large coercivity of bulk Mn{sub 3?x}Ga (0 ? x ? 1.15)

    SciTech Connect (OSTI)

    Wei, J. Z.; Wu, R.; Yang, Y. B.; Chen, X. G.; Xia, Y. H.; Yang, Y. C.; Wang, C. S. [School of Physics, Peking University, Beijing 100871 (China); Yang, J. B., E-mail: jbyang@pku.edu.cn [School of Physics, Peking University, Beijing 100871 (China); State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China)

    2014-05-07T23:59:59.000Z

    The tetragonal DO{sub 22} phase of the Mn{sub 3?x}Ga compounds, with x varying from 0 to 1.15, has been successfully synthesized by annealing the ingots with the cubic ?-phase. It is found that the lattice parameter a of the tetragonal cell remains almost constant, while the lattice parameter c increases significantly as x varies from 0 to 1.15. In the meantime, the magnetization of Mn{sub 3?x}Ga (at 7?T) increases dramatically with increasing x. A substitution model, which is different to the model with manganese vacancies, is proposed to explain these changes. According to this model, the increase of the lattice parameter c and the magnetization with x can be explained by an assumption that Mn atoms at 2b sites are preferentially substituted by larger and nonmagnetic Ga atoms. A coercivity which is higher than that of other bulk Mn{sub 3?x}Ga alloys ever reported is achieved. Coercivities as large as iHc?=?21.4 kOe and 18.2 kOe are obtained for Mn{sub 3.0}Ga at 5?K and 300?K, respectively.

  10. Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes

    SciTech Connect (OSTI)

    Wang, Xiaodong; Pan, Ming; Hou, Liwei; Xie, Wei [No. 50 Research Institute of China Electronics Technology Group Corporation, 200331 Shanghai (China); Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn; Xu, Jintong; Li, Xiangyang; Chen, Xiaoshuang, E-mail: xschen@mail.sitp.ac.cn; Lu, Wei [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai (China)

    2014-01-07T23:59:59.000Z

    The gain and photoresponse characteristics have been numerically studied for back-illuminated separate absorption and multiplication (SAM) GaN avalanche photodiodes (APDs). The parameters of fundamental models are calibrated by simultaneously comparing the simulated dark and light current characteristics with the experimental results. Effects of environmental temperatures and device dimensions on gain characteristics have been investigated, and a method to achieve the optimum thickness of charge layer is obtained. The dependence of gain characteristics and breakdown voltage on the doping concentration of the charge layer is also studied in detail to get the optimal charge layer. The bias-dependent spectral responsivity and quantum efficiency are then presented to study the photoresponse mechanisms inside SAM GaN APDs. It is found the responsivity peak red-shifts at first due to the Franz-Keldysh effect and then blue-shifts due to the reach-through effect of the absorption layer. Finally, a new SAM GaN/AlGaN heterojunction APD structure is proposed for optimizing SAM GaN APDs.

  11. On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    . Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, "Origin of efficiency droop in Ga. Tansu, "Current injection efficiency induced efficiency-droop in InGaN quantum well light. Van de Walle, "Indirect Auger recombination as a cause of efficiency droop in nitride light

  12. Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures

    SciTech Connect (OSTI)

    Nakajima, Akira, E-mail: a-nakajima@aist.go.jp; Ogura, Masahiko; Makino, Toshiharu; Nishizawa, Shin-ichi; Ohashi, Hiromichi; Yamasaki, Satoshi [Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba 305-8568 (Japan); Liu, Pucheng; Kakushima, Kuniyuki; Iwai, Hiroshi [Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori, Yokohama, Kanagawa 226-8503 (Japan)

    2014-04-21T23:59:59.000Z

    The electrical properties of two-dimensional hole gases (2DHGs) in GaN/AlGaN/GaN double heterostructures were investigated. The layers were grown on sapphire substrates and a high-quality bulk GaN substrate. The coexistence of 2DHG and 2D electron gases on both sides of the AlGaN layer was confirmed by Hall effect measurements at 80–460?K. It was also verified that the 2DHGs were generated by negative polarization at the undoped GaN/AlGaN interface, which did not have a doped Mg acceptor. It was also demonstrated that the 2DHG density could be controlled by varying the AlGaN layer thickness and was inversely related to the 2DHG mobility. The measured relation indicated that the 2DHG mobility is mainly limited by phonon scatterings at around room temperature. As a result, the maximum 2DHG mobility of 16 cm{sup 2}/Vs at 300?K was achieved with a density of 1?×?10{sup 13}?cm{sup ?2}.

  13. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074, Würzburg (Germany); Igusa, R.; Iwamoto, S.; Arakawa, Y. [University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

    2014-09-15T23:59:59.000Z

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  14. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12T23:59:59.000Z

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  15. Wavelength limits for InGaN quantum wells on GaN

    SciTech Connect (OSTI)

    Pristovsek, Markus, E-mail: markus@pristovsek.de [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)] [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)

    2013-06-17T23:59:59.000Z

    The emission wavelength of coherently strained InGaN quantum wells (QW) is limited by the maximum thickness before relaxation starts. For high indium contents x>40% the resulting wavelength decreases because quantum confinement dominates. For low indium content x<40% the electron hole wave function overlap (and hence radiative emission) is strongly reduced with increasing QW thickness due to the quantum confined Stark effect and imposes another limit. This results in a maximum usable emission wavelength at around 600?nm for QWs with 40%-50% indium content. Relaxed InGaN buffer layers could help to push this further, especially on non- and semi-polar orientations.

  16. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. (USDOE Idaho Field Office, Idaho Falls, ID (United States)); Koploy, M.A. (General Atomics, San Diego, CA (United States))

    1992-01-01T23:59:59.000Z

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  17. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. [USDOE Idaho Field Office, Idaho Falls, ID (United States); Koploy, M.A. [General Atomics, San Diego, CA (United States)

    1992-08-01T23:59:59.000Z

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  18. Two-color picosecond and continuous-wave experiments on anti-Stokes and Stokes carrier-transfer phenomena in GaAs/AlxGa1 xAs and InGaP2 /AlxGa1 xAs heterostructures

    E-Print Network [OSTI]

    Hohng, Sung Chul

    -transfer phenomena in GaAs/AlxGa1 xAs and InGaP2 /AlxGa1 xAs heterostructures S. C. Hohng, D. W. Khang, Y. H. Ahn, J evidence of the two-step absorption process in anti-Stokes photoluminescence in both GaAs/AlxGa1 xAs and InGaP

  19. Final Environmental Assessment of remedial action at the Falls City uranium mill tailings site, Falls City, Texas

    SciTech Connect (OSTI)

    Not Available

    1991-12-01T23:59:59.000Z

    This environmental assessment (EA) is prepared pursuant to the National Environmental Policy Act (NEPA), which requires Federal agencies to assess the impacts that their actions may have on the environment. This EA examines the short- and long-term effects of the DOE`s proposed remedial action for the Falls City tailings site. The no action alternative is also examined. The DOE will use the information and analyses presented here to determine whether the proposed action would have a significant impact on the environment. If the impacts are determined to be significant, an EIS will be prepared. If the impacts are not judged to be significant, the DOE will issue an official ``Finding of No Significant Impact`` and implement the proposed action.

  20. Demonstration of a semipolar (10(1)over-bar(3)over-bar) InGaN/GaN green light emitting diode

    E-Print Network [OSTI]

    2005-01-01T23:59:59.000Z

    InGaN / GaN green light emitting diode R. Sharma, a? P. M.green ??525 nm? light emitting diode ?LED?. The fabricated