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Sample records for ga ni za

  1. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect (OSTI)

    zduran, Mustafa; Turgut, Kemal; Arikan, Nihat; ?yigr, Ahmet; Candan, Abdullah

    2014-10-06

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  2. Photosensitivity of the Ni-n-GaAs Schottky barriers

    SciTech Connect (OSTI)

    Melebaev, D.; Melebaeva, G. D.; Rud', V. Yu. Rud', Yu. V.

    2009-01-15

    The method of chemical deposition is used to form the structures with the Ni-n-GaAs Schottky barrier. The thickness of the Ni layers with a specular outer surface was varied within the range of 150-220 A. It was experimentally observed for the first time that photosensitivity of the obtained barriers with the semitransparent Ni layers illuminated is practically absent in the Fowler region of the spectrum at hv = 0.9-1.5 eV. This circumstance is related mainly to the fact that, in this case, the Ni layer side of the structure was illuminated, and radiation with the photon energy hv < 1.3 eV was effectively reflected from the nickel surface. It is established that the developed Ni-n-GaAs structures can be used as high-efficiency wide-band photoconverters of both visible and ultraviolet radiation.

  3. Coexistence of charge-density wave and ferromagnetism in Ni2MnGa...

    Office of Scientific and Technical Information (OSTI)

    Coexistence of charge-density wave and ferromagnetism in Ni2MnGa Citation Details In-Document Search Title: Coexistence of charge-density wave and ferromagnetism in Ni2MnGa ...

  4. Structure and magnetic properties of Ce₃(Ni/Al/Ga)₁₁-A...

    Office of Scientific and Technical Information (OSTI)

    ...AlGa)-A new phase with the LaAl structure type Prev Next Title: Structure and magnetic properties of Ce(NiAlGa)-A new phase with the ...

  5. Unoccupied electronic structure of Ni2MnGa ferromagnetic shape...

    Office of Scientific and Technical Information (OSTI)

    shape memory alloy This content will become publicly available on August 20, 2016 Prev Next Title: Unoccupied electronic structure of Ni2MnGa ferromagnetic shape memory alloy ...

  6. Modeling and Characterization of the Magnetocaloric Effect in Ni2MnGa Materials

    SciTech Connect (OSTI)

    Nicholson, Don M; Odbadrakh, Khorgolkhuu; Rios, Orlando; Hodges, Jason P; Ludtka, Gerard Michael; Porter, Wallace D; Sefat, A. S.; Rusanu, Aurelian; Evans III, Boyd Mccutchen

    2012-01-01

    Magnetic shape memory alloys have great promise as magneto-caloric effect refrigerant materials due to their combined magnetic and structural transitions. Computational and experimental research is reported on the Ni2MnGa material system. The magnetic states of this system have been explored using the Wang-Landau statistical approach in conjunction with the Locally Self-consistent Multiple-Scattering (LSMS) method to explore the magnetic states responsible for the magnet-caloric effect in this material. The effects of alloying agents on the transition temperatures of the Ni2MnGa alloy were investigated using differential scanning calorimetry (DSC) and superconducting quantum interference device (SQUID). Neutron scattering experiments were performed to observe the structural and magnetic phase transformations at the Spallation Neutron Source (SNS) at Oak Ridge National Laboratory (ORNL) on alloys of Ni-Mn-Ga and Ni-Mn-Ga-Cu-Fe. Data from the observations are discussed in comparison with the computational studies.

  7. Unoccupied electronic structure of Ni2MnGa ferromagnetic shape memory alloy

    SciTech Connect (OSTI)

    Maniraj, M.; D?Souza, S. W.; Rai, Abhishek; Schlagel, D. L.; Lograsso, T. A.; Chakrabarti, Aparna; Barman, S. R.

    2015-08-20

    Momentum resolved inverse photoemission spectroscopy measurements show that the dispersion of the unoccupied bands of Ni2MnGa is significant in the austenite phase. Furthermore, in the martensite phase, it is markedly reduced, which is possibly related to the structural transition to an incommensurate modulated state in the martensite phase. Finally, based on the first principle calculations of the electronic structure of NiMnGa, we show that the modification of the spectral shape with surface composition is related to change in the hybridization between the Mn 3d and Ni 3d-like states that dominate the unoccupied conduction band.

  8. Electronic Structure and Lattice Dynamics of the Magnetic Shape Memory Alloy Co2NiGa

    SciTech Connect (OSTI)

    Siewert, M.; Shapiro, S.; Gruner, M.E.; Dannenberg, A.; Hucht, A.; Xu, G.; Schlagel, D.L.; Lograsso, T.A.; Entel1, P.

    2010-08-20

    In addition to the prototypical Ni-Mn-based Heusler alloys, the Co-Ni-Ga systems have recently been suggested as another prospective materials class for magnetic shape-memory applications. We provide a characterization of the dynamical properties of this material and their relation to the electronic structure within a combined experimental and theoretical approach. This relies on inelastic neutron scattering to obtain the phonon dispersion while first-principles calculations provide the link between dynamical properties and electronic structure. In contrast to Ni{sub 2}MnGa, where the softening of the TA{sub 2} phonon branch is related to Fermi-surface nesting, our results reveal that the respective anomalies are absent in Co-Ni-Ga, in the phonon dispersions as well as in the electronic structure.

  9. Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hwang, Ya-Hsi; Ahn, Shihyun; Dong, Chen; Zhu, Weidi; Kim, Byung-Jae; Le, Lingcong; Ren, Fan; Lind, Aaron G.; Dahl, James; Jones, Kevin S.; et al

    2015-04-27

    We investigated the degradation mechanism of Ti/Al/Ni/Au-based Ohmic metallization on AlGaN/GaN high electron mobility transistors upon exposure to buffer oxide etchant (BOE). The major effect of BOE on the Ohmic metal was an increase of sheet resistance from 2.89 to 3.69 Ω/ₜafter 3 min BOE treatment. The alloyed Ohmic metallization consisted 3–5 μm Ni-Al alloy islands surrounded by Au-Al alloy-rings. The morphology of both the islands and ring areas became flatter after BOE etching. Lastly, we used energy dispersive x-ray analysis and Auger electron microscopy to analyze the compositions and metal distributions in the metal alloys prior to and aftermore » BOE exposure.« less

  10. Unoccupied electronic structure of Ni2MnGa ferromagnetic shape memory alloy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Maniraj, M.; D׳Souza, S. W.; Rai, Abhishek; Schlagel, D. L.; Lograsso, T. A.; Iowa State Univ., Ames, IA; Chakrabarti, Aparna; Barman, S. R.

    2015-08-20

    Momentum resolved inverse photoemission spectroscopy measurements show that the dispersion of the unoccupied bands of Ni2MnGa is significant in the austenite phase. Furthermore, in the martensite phase, it is markedly reduced, which is possibly related to the structural transition to an incommensurate modulated state in the martensite phase. Finally, based on the first principle calculations of the electronic structure of Ni–Mn–Ga, we show that the modification of the spectral shape with surface composition is related to change in the hybridization between the Mn 3d and Ni 3d-like states that dominate the unoccupied conduction band.

  11. Structural transformations in Mn{sub 2}NiGa due to residual stress

    SciTech Connect (OSTI)

    Singh, Sanjay; Maniraj, M.; D'Souza, S. W.; Barman, S. R.; Ranjan, R.

    2010-02-22

    Powder x-ray diffraction study of Mn{sub 2}NiGa ferromagnetic shape memory alloy shows the existence of a 7M monoclinic modulated structure at room temperature (RT). The structure of Mn{sub 2}NiGa is found to be highly dependent on residual stress. For higher stress, the structure is tetragonal at RT, and for intermediate stress it is 7M monoclinic. However, only when the stress is considerably relaxed, the structure is cubic, as is expected at RT since the martensitic transition temperature is 230 K.

  12. Modeling and Characterization of the Magnetocaloric Effect in Ni2MnGa Materials

    SciTech Connect (OSTI)

    Nicholson, Don M; Odbadrakh, Khorgolkhuu; Shassere, Benjamin; Rios, Orlando; Hodges, Jason P; Ludtka, Gerard Michael; Porter, Wallace D; Safa-Sefat, Athena; Rusanu, Aurelian; Brown, Greg; Evans III, Boyd Mccutchen

    2014-01-01

    Magnetic shape memory alloys have great promise as magneto-caloric effect refrigerant materials due to their combined magnetic and structural transitions. Computational and experimental research is reported on the Ni2MnGa material system. The magnetic states of this system are explored using the Wang-Landau statistical approach in conjunction with the Locally Self-consistent Multiple-Scattering method. The effects of alloying agents on the transition temperatures of the Ni2MnGa alloy are investigated using differential scanning calorimetry and superconducting quantum interference device. Experiments are performed at the Spallation Neutron Source at Oak Ridge National Laboratory to observe the structural and magnetic phase transformations.

  13. Modulation on Ni{sub 2}MnGa(001) surface

    SciTech Connect (OSTI)

    D'Souza, S. W.; Rai, Abhishek; Nayak, J.; Maniraj, M.; Dhaka, R. S.; Barman, S. R.; Schlagel, D. L.; Lograsso, T. A.

    2011-07-15

    We report periodic modulation on (001) surface of Ni2MnGa ferromagnetic shape memory alloy. For the stoichiometric surface, analysis of the low energy electron diffraction (LEED) spot profiles shows that the modulation is incommensurate. The modulation appears at 200 K, concomitant with the first order structural transition to the martensitic phase.

  14. Inverse magnetocaloric effect in Mn{sub 2}NiGa and Mn{sub 1.75}Ni{sub 1.25}Ga magnetic shape memory alloys

    SciTech Connect (OSTI)

    Singh, Sanjay Barman, S. R.; Esakki Muthu, S.; Arumugam, S.; Senyshyn, A.; Rajput, P.; Suard, E.

    2014-02-03

    Inverse magnetocaloric effect is demonstrated in Mn{sub 2}NiGa and Mn{sub 1.75}Ni{sub 1.25}Ga magnetic shape memory alloys. The entropy change at the martensite transition is larger in Mn{sub 1.75}Ni{sub 1.25}Ga, and it increases linearly with magnetic field in both the specimens. Existence of inverse magnetocaloric effect is consistent with the observation that magnetization in the martensite phase is smaller than the austenite phase. Although the Mn content is smaller in Mn{sub 1.75}Ni{sub 1.25}Ga, from neutron diffraction, we show that the origin of inverse magnetocaloric effect is the antiferromagnetic interaction between the Mn atoms occupying inequivalent sites.

  15. Vacancy dynamic in Ni-Mn-Ga ferromagnetic shape memory alloys

    SciTech Connect (OSTI)

    Merida, D.; Snchez-Alarcos, V.; Prez-Landazbal, J. I.; Recarte, V.; Plazaola, F.

    2014-06-09

    Vacancies control any atomic ordering process and consequently most of the order-dependent properties of the martensitic transformation in ferromagnetic shape memory alloys. Positron annihilation spectroscopy demonstrates to be a powerful technique to study vacancies in NiMnGa alloys quenched from different temperatures and subjected to post-quench isothermal annealing treatments. Considering an effective vacancy type the temperature dependence of the vacancy concentration has been evaluated. Samples quenched from 1173?K show a vacancy concentration of 1100??200?ppm. The vacancy migration and formation energies have been estimated to be 0.55??0.05?eV and 0.90??0.07?eV, respectively.

  16. Direct evidence of detwinning in polycrystalline Ni-Mn-Ga ferromagnetic shape memory alloys during deformation.

    SciTech Connect (OSTI)

    Nie, Z. H.; Lin Peng, R.; Johansson, S.; Oliver, E. C.; Ren, Y.; Wang, Y. D.; Liu, Y. D.; Deng, J. N.; Zuo, L.; Brown, D. E.; Northwestern Univ., China; Linkoping Univ.; Rutherford Appleton Lab.; Northern Illinois Univ.

    2008-01-01

    In situ time-of-flight neutron diffraction and high-energy x-ray diffraction techniques were used to reveal the preferred reselection of martensite variants through a detwinning process in polycrystalline Ni-Mn-Ga ferromagnetic shape memory alloys under uniaxial compressive stress. The variant reorientation via detwinning during loading can be explained by considering the influence of external stress on the grain/variant orientation-dependent distortion energy. These direct observations of detwinning provide a good understanding of the deformation mechanisms in shape memory alloys.

  17. Anti-site disorder and improved functionality of Mn?NiX (X = Al, Ga, In, Sn) inverse Heusler alloys

    SciTech Connect (OSTI)

    Paul, Souvik; Kundu, Ashis; Ghosh, Subhradip; Sanyal, Biplab

    2014-10-07

    Recent first-principles calculations have predicted Mn?NiX (X = Al, Ga, In, Sn) alloys to be magnetic shape memory alloys. Moreover, experiments on Mn?NiGa and Mn?NiSn suggest that the alloys deviate from the perfect inverse Heusler arrangement and that there is chemical disorder at the sublattices with tetrahedral symmetry. In this work, we investigate the effects of such chemical disorder on phase stabilities and magnetic properties using first-principles electronic structure methods. We find that except Mn?NiAl, all other alloys show signatures of martensitic transformations in presence of anti-site disorder at the sublattices with tetrahedral symmetry. This improves the possibilities of realizing martensitic transformations at relatively low fields and the possibilities of obtaining significantly large inverse magneto-caloric effects, in comparison to perfect inverse Heusler arrangement of atoms. We analyze the origin of such improvements in functional properties by investigating electronic structures and magnetic exchange interactions.

  18. Highly mobile type II twin boundary in Ni-Mn-Ga five-layered martensite

    SciTech Connect (OSTI)

    Sozinov, A.; Lanska, N.; Soroka, A.; Straka, L.

    2011-09-19

    Twin relationships and stress-induced reorientation were studied in Ni{sub 2}Mn{sub 1.14}Ga{sub 0.86} single crystal with five-layered modulated martensite crystal structure. Very low twinning stress of about 0.1 MPa was found for twin boundaries which deviated a few degrees from the (011) crystallographic plane. However, twin boundaries oriented exactly parallel to the (011) plane exhibited considerably higher level of twinning stress, above 1 MPa. X-ray diffraction experiments and calculations based on approximation of the martensite crystal lattice as a tetragonal lattice with a slight monoclinic distortion identified the two different kinds of twin interfaces as type II and type I twin boundaries.

  19. Magneto-optical spectroscopy of ferromagnetic shape-memory Ni-Mn-Ga alloy

    SciTech Connect (OSTI)

    Veis, M. Beran, L.; Zahradnik, M.; Antos, R.; Straka, L.; Kopecek, J.; Fekete, L.; Heczko, O.

    2014-05-07

    Magneto-optical properties of single crystal of Ni{sub 50.1}Mn{sub 28.4}Ga{sub 21.5} magnetic shape memory alloy in martensite and austenite phase were systematically studied. Crystal orientation was approximately along (100) planes of parent cubic austenite. At room temperature, the sample was in modulated 10M martensite phase and transformed to cubic austenite at 323?K. Spectral dependence of polar magneto-optical Kerr effect was obtained by generalized magneto-optical ellipsometry with rotating analyzer in the photon energy range from 1.2 to 4?eV, and from room temperature to temperature above the Curie point. The Kerr rotation spectra exhibit prominent features typical for complexes containing Mn atoms. Significant spectral changes during transformation to austenite can be explained by different optical properties caused by changes in density of states near the Fermi energy.

  20. Strain-induced dimensionality crossover of precursor modulations in Ni{sub 2}MnGa

    SciTech Connect (OSTI)

    Nie, Zhihua E-mail: ydwang@neu.edu.cn; Wang, Yandong E-mail: ydwang@neu.edu.cn; Shang, Shunli; Wang, Yi; Liu, Zi-Kui; Zeng, Qiaoshi; Ren, Yang; Liu, Dongmei; Yang, Wenge

    2015-01-12

    Precursor modulations often occur in functional materials like magnetic shape memory alloys, ferroelectrics, and superconductors. In this letter, we have revealed the underlying mechanism of the precursor modulations in ferromagnetic shape memory alloys Ni{sub 2}MnGa by combining synchrotron-based x-ray diffraction experiments and first-principles phonon calculations. We discovered the precursor modulations along [011] direction can be eliminated with [001] uniaxial loading, while the precursor modulations or premartensite can be totally suppressed by hydrostatic pressure condition. The TA{sub 2} phonon anomaly is sensitive to stress induced lattice strain, and the entire TA{sub 2} branch is stabilized along the directions where precursor modulations are eliminated by external stress. Our discovery bridges precursor modulations and phonon anomalies, and sheds light on the microscopic mechanism of the two-step superelasticity in precursor martensite.

  1. Structural, magnetic, and transport properties of sputtered hexagonal MnNiGa thin films

    SciTech Connect (OSTI)

    Li, Yueqing; Liu, E. K.; Wu, G. H.; Wang, Wenhong; Liu, Zhongyuan

    2014-12-14

    We report on a systematical study of the structure, magnetism, and magnetotransport behavior of the hexagonal MnNiGa films deposited on thermally oxidized Si (001) substrates by magnetron sputtering. X-ray diffractions reveal that all the films deposited at different temperatures crystallized in hexagonal Ni{sub 2}In-type structure (space group P6{sub 3}/mmc). Scanning electron microscopy observations show that the surface morphology of the films varies with deposition temperature, and energy dispersive spectroscopy analysis shows compositions of the films remain nearly unchanged, independent of the deposition temperature. Magnetic measurements indicate that all films are ferromagnetic and exhibit a magnetic anisotropy behavior. The magnetoresistance (MR) exhibits a negative temperature- and field-dependent behavior. The possible origin of the negative MR is discussed. Furthermore, we found that the Hall effect is dominated by an anomalous Hall effect (AHE) only due to skew scattering independent of the deposition temperature of films. Moreover, the anomalous Hall resistivity presents a non-monotonously temperature-dependent behavior.

  2. Enhanced magnetic hysteresis in Ni-Mn-Ga single crystal and its influence on magnetic shape memory effect

    SciTech Connect (OSTI)

    Heczko, O. Drahokoupil, J.; Straka, L.

    2015-05-07

    Enhanced magnetic hysteresis due to boron doping in combination with magnetic shape memory effect in Ni-Mn-Ga single crystal results in new interesting functionality of magnetic shape memory (MSM) alloys such as mechanical demagnetization. In Ni{sub 50.0}Mn{sub 28.5}Ga{sub 21.5} single crystal, the boron doping increased magnetic coercivity from few Oe to 270?Oe while not affecting the transformation behavior and 10?M martensite structure. However, the magnetic field needed for MSM effect also increased in doped sample. The magnetic behavior is compared to undoped single crystal of similar composition. The evidence from the X-ray diffraction, magnetic domain structure, magnetization loops, and temperature evolution of the magnetic coercivity points out that the enhanced hysteresis is caused by stress-induced anisotropy.

  3. Extended investigation of intermartensitic transitions in Ni-Mn-Ga magnetic shape memory alloys: A detailed phase diagram determination

    SciTech Connect (OSTI)

    akir, Asli; Aktrk, Seluk; Righi, Lara

    2013-11-14

    Martensitic transitions in shape memory Ni-Mn-Ga Heusler alloys take place between a high temperature austenite and a low temperature martensite phase. However, intermartensitic transformations have also been encountered that occur from one martensite phase to another. To examine intermartensitic transitions in magnetic shape memory alloys in detail, we carried out temperature dependent magnetization, resistivity, and x-ray diffraction measurements to investigate the intermartensitic transition in Ni{sub 50}Mn{sub 50x}Ga{sub x} in the composition range 12?x?25 at. %. Rietveld refined x-ray diffraction results are found to be consistent with magnetization and resistivity data. Depending on composition, we observe that intermartensitic transitions occur in the sequences 7M?L1{sub 0},?5M?7M, and 5M?7M?L1{sub 0} with decreasing temperature. The L1{sub 0} non-modulated structure is most stable at low temperature.

  4. Static critical phenomena in Co-Ni-Ga ferromagnetic shape memory alloy

    SciTech Connect (OSTI)

    Sethi, Brahmananda Sarma, S. Srinivasan, A. Santra, S. B.

    2014-04-24

    Ferromagnetic shape memory alloys are smart materials because they exhibit temperature driven shape memory effect and magnetic field induced strain. Thus two types of energy, i.e. thermal and magnetic, are used to control their shape memory behaviour. Study of critical phenomenon in such materials has received increased experimental and theoretical attention for better understanding of the magnetic phase transition behavior as well as further development of ferromagnetic shape memory materials. In the present study we report the preparation and characterization of bulk Co{sub 45}Ni{sub 25}Ga{sub 30} alloy, prepared by a sequence of arc melting technique followed by homogenization at 1150 C for 24 hours and ice-water quenching. Structural and magnetic properties of the alloys were studied by means of X-ray diffraction and vibrating sample magnetometer in an applied field range of 18 kOe equipped with a high temperature oven. We have determined the critical temperature T{sub C} (?375.5 K) and the critical exponents viz; ?=0.40, ?=1.68 and ?=5.2. Asymptotic critical exponents ?, ?, and ? obey Widom scaling relation, ?+?=??, and the magnetization data satisfy the scaling equation of state for second-order phase transition in the asymptotic critical region.

  5. Effect of Heat-Treatment on the Phases of Ni-Mn-Ga Magnetic Shape Memory Alloys

    SciTech Connect (OSTI)

    Huq, Ashfia; Ari-Gur, Pnina; Kimmel, Giora; Richardson, James W; Sharma, Kapil

    2009-01-01

    The Heusler alloys Ni50Mn25+xGa25-x display magnetic shape memory effect (MSM) with very fast and large reversible strain under magnetic fields. This large strain and the speed of reaction make MSM alloys attractive as smart materials. Our crystallographic investigation of these alloys, focused on non-stoichiometric composition with excess of manganese. Using neutron diffraction, we revealed the necessary processing parameters to achieve and preserve the homogeneous metastable one-phase martensitic structure that is needed for an MSM effect at room temperature.

  6. Energy harvesting using martensite variant reorientation mechanism in a NiMnGa magnetic shape memory alloy

    SciTech Connect (OSTI)

    Karaman, I.; Basaran, B.; Karaca, H. E.; Karsilayan, A. I.; Chumlyakov, Y. I.

    2007-04-23

    Magnetic shape memory alloys demonstrate significant potential for harvesting waste mechanical energy utilizing the Villari effect. In this study, a few milliwatts of power output are achieved taking advantage of martensite variant reorientation mechanism in Ni{sub 51.1}Mn{sub 24}Ga{sub 24.9} single crystals under slowly fluctuating loads (10 Hz) without optimization in the power conversion unit. Effects of applied strain range, bias magnetic field, and loading frequency on the voltage output are revealed. Anticipated power outputs under moderate frequencies are predicted showing that the power outputs higher than 1 W are feasible.

  7. Optical and magneto-optical studies of martensitic transformation in Ni-Mn-Ga magnetic shape memory alloys

    SciTech Connect (OSTI)

    Beran, L.; Cejpek, P.; Kulda, M.; Antos, R.; Holy, V.; Veis, M.; Straka, L.; Heczko, O.

    2015-05-07

    Optical and magneto-optical properties of single crystal of Ni{sub 50.1}Mn{sub 28.4}Ga{sub 21.5} magnetic shape memory alloy during its transformation from martensite to austenite phase were systematically studied. Crystal orientation was approximately along (100) planes of parent cubic austenite. X-ray reciprocal mapping confirmed modulated 10?M martensite phase. Temperature depended measurements of saturation magnetization revealed the martensitic transformation at 335?K during heating. Magneto-optical spectroscopy and spectroscopic ellipsometry were measured in the sample temperature range from 297 to 373?K and photon energy range from 1.2 to 6.5?eV. Magneto-optical spectra of polar Kerr rotation as well as the spectra of ellipsometric parameter ? exhibited significant changes when crossing the transformation temperature. These changes were assigned to different optical properties of Ni-Mn-Ga in martensite and austenite phases due to modification of electronic structure near the Fermi energy during martensitic transformation.

  8. 4D STUDY OF STRAIN GRADIENTS EVOLUTION IN TWINNED NiMnGa SINGLE CRYSTALS UNDER MAGNETIC FIELD

    SciTech Connect (OSTI)

    Barabash, Rozaliya; Xu, Ruqing; Barabash, Oleg M; Sozinov, Alexei

    2014-01-01

    Time-resolved 3D X-ray microscopy with a submicron beam size was used to follow the evolution of strains in off-stoichiometric NiMnGa twinned crystals near type I (hard) twin boundary under magnetic field. Laminate A/B microstructure was revealed near the twin boundaries in A variant. Large strain gradients are observed in the C variant in the immediate vicinity of the type I twin boundary: the lattice is under large tensile strains ~0.4% along the c- axes within first micron. Distinct a and b lattice parameter evolution with temperature and magnetic field is demonstrated. In an applied magnetic field the strain field was observed at larger distances from the twin boundary and becomes more complex. Stochastic twin boundary motion was observed after the magnetic field reaches a certain critical value.

  9. Experimental evidence of stress-field-induced selection of variants in Ni-Mn-Ga ferromagnetic shape-memory alloys

    SciTech Connect (OSTI)

    Wang, Y. D.; Brown, D. W.; Choo, H.; Liaw, P. K.; Benson, M. L.; Cong, D. Y.; Zuo, L.

    2007-05-01

    The in situ time-of-flight neutron-diffraction measurements captured well the martensitic transformation behavior of the Ni-Mn-Ga ferromagnetic shape-memory alloys under uniaxial stress fields. We found that a small uniaxial stress applied during phase transformation dramatically disturbed the distribution of variants in the product phase. The observed changes in the distributions of variants may be explained by considering the role of the minimum distortion energy of the Bain transformation in the effective partition among the variants belonging to the same orientation of parent phase. It was also found that transformation kinetics under various stress fields follows the scale law. The present investigations provide the fundamental approach for scaling the evolution of microstructures in martensitic transitions, which is of general interest to the condensed matter community.

  10. Wavelengths, transition probabilities, and oscillator strengths for M-shell transitions in Co-, Ni-, Cu-, Zn-, Ga-, Ge-, and Se-like Au ions

    SciTech Connect (OSTI)

    Xu, Min; Jiang, Gang; Deng, Banglin; Bian, Guojie

    2014-11-15

    Wavelengths, transition probabilities, and oscillator strengths have been calculated for M-shell electric dipole transitions in Co-, Ni-, Cu-, Zn-, Ga-, Ge-, and Se-like Au ions. The fully relativistic multiconfiguration Dirac–Fock method, taking quantum electrodynamical effects and the Breit correction into account, was used in the calculations. Calculated energy levels of M-shell excited states for Cu-, Zn-, Ga-, Ge-, and Se-like Au ions from the method were compared with available theoretical and experimental results, and good agreement with them was achieved.

  11. Superelasticity by reversible variant reorientation in a Ni-Mn-Ga microwire with bamboo grains

    SciTech Connect (OSTI)

    Wang, Z. L.; Zheng, P.; Nie, Z. H.; Ren, Y.; Wang, Y. D.; Mullner, P.; Dunand, D. C.

    2015-08-26

    The link between microstructure and mechanical properties is investigated for a superelastic Ni–Mn–Ga microwire with 226 μm diameter, created by solidification via the Taylor method. The wire, which consists of bamboo grains with tetragonal martensite matrix and coarse γ precipitates, exhibits fully reversible superelastic behavior up to 4% tensile strain. Upon multiple tensile load–unload cycles, reproducible stress fluctuations of ~3 MPa are measured on the loading superelastic stress plateau of ~50 MPa. During cycles at various temperatures spanning -70 to 55 °C, the plateau stress decreases from 58 to 48 MPa near linearly with increasing temperature. Based on in situ synchrotron X-ray diffraction measurements, we conclude that this superelastic behavior is due to reversible martensite variants reorientation (i.e., reversible twinning) with lattice rotation of ~13°. The reproducible stress plateau fluctuations are assigned to reversible twinning at well-defined locations along the wire. The strain recovery during unloading is attributed to reverse twinning, driven by the internal stress generated on loading between the elastic γ precipitates and the twinning martensite matrix. Lastly, the temperature dependence of the twining stress on loading is related to the change in tetragonality of the martensite, as measured by X-ray diffraction.

  12. Superelasticity by reversible variant reorientation in a Ni-Mn-Ga microwire with bamboo grains

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wang, Z. L.; Zheng, P.; Nie, Z. H.; Ren, Y.; Wang, Y. D.; Mullner, P.; Dunand, D. C.

    2015-08-26

    The link between microstructure and mechanical properties is investigated for a superelastic Ni–Mn–Ga microwire with 226 μm diameter, created by solidification via the Taylor method. The wire, which consists of bamboo grains with tetragonal martensite matrix and coarse γ precipitates, exhibits fully reversible superelastic behavior up to 4% tensile strain. Upon multiple tensile load–unload cycles, reproducible stress fluctuations of ~3 MPa are measured on the loading superelastic stress plateau of ~50 MPa. During cycles at various temperatures spanning -70 to 55 °C, the plateau stress decreases from 58 to 48 MPa near linearly with increasing temperature. Based on in situmore » synchrotron X-ray diffraction measurements, we conclude that this superelastic behavior is due to reversible martensite variants reorientation (i.e., reversible twinning) with lattice rotation of ~13°. The reproducible stress plateau fluctuations are assigned to reversible twinning at well-defined locations along the wire. The strain recovery during unloading is attributed to reverse twinning, driven by the internal stress generated on loading between the elastic γ precipitates and the twinning martensite matrix. Lastly, the temperature dependence of the twining stress on loading is related to the change in tetragonality of the martensite, as measured by X-ray diffraction.« less

  13. Single crystal neutron diffraction study of lattice and magnetic structures of 5M modulated Ni2Mn1.14Ga0.86

    SciTech Connect (OSTI)

    Pramanick, Abhijit; Wang, Xiaoping; An, Ke; Stoica, Alexandru Dan; Hoffmann, Christina; Wang, Xun-Li

    2012-01-01

    A comprehensive description of the crystal and magnetic structures of Ni-Mn-Ga magnetic shape memory alloys is important to understand the physical origins of their magnetoelastic properties. These structural details for an off-stoichiometric Ni2Mn1.14Ga0.86 alloy have been obtained from refinement of high-resolution single crystal neutron diffraction data following a (3+1)-dimensional superspace formalism. In particular, the structure adopts a P2/m( 0 )00 (3+1)-D superspace symmetry with the following fundamental lattice parameters: a=4.255(4) , b=5.613(4) , c=4.216(3) , a commensurate periodicity of 5M and a modulation wave vector of . The magnetic moments are aligned along the b-axis. The modulations for atomic site displacements, site occupancies and magnetic moments are elucidated from a (3+1)-D refinement of the neutron diffraction data. In addition to atomic displacements corresponding to shear waves along <110>, distortions of Ni-centric tetrahedra are also evident. Physical interpretations for the different structural distortions and their relationship with magnetic properties are discussed.

  14. In-situ neutron diffraction study of martensitic variant redistribution in polycrystalline Ni-Mn-Ga alloy under cyclic thermo-mechanical treatment

    SciTech Connect (OSTI)

    Li, Zongbin; Zou, Naifu; Zhao, Xiang; Zuo, Liang E-mail: yudong.zhang@univ-lorraine.fr; Zhang, Yudong E-mail: yudong.zhang@univ-lorraine.fr; Esling, Claude; Gan, Weimin

    2014-07-14

    The influences of uniaxial compressive stress on martensitic transformation were studied on a polycrystalline Ni-Mn-Ga bulk alloy prepared by directional solidification. Based upon the integrated in-situ neutron diffraction measurements, direct experimental evidence was obtained on the variant redistribution of seven-layered modulated (7M) martensite, triggered by external uniaxial compression during martensitic transformation. Large anisotropic lattice strain, induced by the cyclic thermo-mechanical treatment, has led to the microstructure modification by forming martensitic variants with a strong 〈0 1 0〉{sub 7M} preferential orientation along the loading axis. As a result, the saturation of magnetization became easier to be reached.

  15. Structure and magnetic properties of Ce₃(Ni/Al/Ga)₁₁—A new phase with the La₃Al₁₁ structure type

    SciTech Connect (OSTI)

    Janka, Oliver; Shang, Tian; Baumbach, Ryan E.; Bauer, Eric D.; Thompson, Joe D.; Kauzlarich, Susan M.

    2015-03-01

    Single crystals of Ce₃(Ni/Al/Ga)₁₁ were obtained from an Al flux reaction. Single crystals of the title compound crystallizing in the orthorhombic space group Immm (No. 71, Z = 2) with a = 436.38(14), b = 1004.5(3) and c = 1293.4(4) pm. This is a standardized unit cell of the previously published La₃Al₁₁ structure type. Wavelength dispersive microprobe provides the composition of Ce₃.₁₁₍₁₎Ni₀.₀₃₍₁₎Al₈.₉₅₍₁₎Ga₁.₉₀₍₁₎. Single crystal refinement provides the composition Ce₃Ni₀.₀₈Al₉.₁₃Ga₁.₇₈ with substitution of the Ni and Ga on the Al1 and Al4 sites with the Al2 and Al3 solely occupied by Al. Magnetic susceptibility measurements reveal antiferromagnetic ordering with TN = 4.8 K and there is no evidence for a ferromagnetic ordering that has been reported for Ce₃Al₁₁. The effective magnetic moment was found to be μeff = 1.9μB/Ce, which is lower than the expected value for trivalent Ce (2.54μB/Ce).

  16. Neutron diffraction study of the martensitic transformation and chemical order in Heusler alloy Ni1.91Mn1.29Ga0.8

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ari-Gur, Pnina; Garlea, Vasile O.; Cao, Huibo; Ge, Y.; Aaltio, I.; Hannula, S. P.; Koledov, V.

    2015-11-05

    In this study, Heusler alloys of Ni-Mn-Ga compositions demonstrate ferromagnetic shape memory effect in the martensitic state. The transformation temperature and the chemical order depend strongly on the composition. In the current work, the structure and chemical order of the martensitic phase of Ni1.91Mn1.29Ga0.8 were studied using neutron diffraction; the diffraction pattern was refined using the FullProf software. It was determined that the structural transition occurs around 330 K. At room temperature, 300 K, which is below the martensite transformation temperature, all the Bragg reflections can be described by a monoclinic lattice with a symmetry of space group P 1more » 2/m 1 and lattice constants of a = 4.23047(7) [Å], b = 5.58333(6) [Å], c = 21.0179(2) [Å], beta = 90.328(1). The chemical order is of critical importance in these alloys, and it was previously studied at 363 K. Analysis of the neutron diffraction in the monoclinic phase shows that the chemical order is maintained during the martensitic transformation.« less

  17. Structure and magnetic properties of Ce₃(Ni/Al/Ga)₁₁—A new phase with the La₃Al₁₁ structure type

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Janka, Oliver; Shang, Tian; Baumbach, Ryan E.; Bauer, Eric D.; Thompson, Joe D.; Kauzlarich, Susan M.

    2015-03-01

    Single crystals of Ce₃(Ni/Al/Ga)₁₁ were obtained from an Al flux reaction. Single crystals of the title compound crystallizing in the orthorhombic space group Immm (No. 71, Z = 2) with a = 436.38(14), b = 1004.5(3) and c = 1293.4(4) pm. This is a standardized unit cell of the previously published La₃Al₁₁ structure type. Wavelength dispersive microprobe provides the composition of Ce₃.₁₁₍₁₎Ni₀.₀₃₍₁₎Al₈.₉₅₍₁₎Ga₁.₉₀₍₁₎. Single crystal refinement provides the composition Ce₃Ni₀.₀₈Al₉.₁₃Ga₁.₇₈ with substitution of the Ni and Ga on the Al1 and Al4 sites with the Al2 and Al3 solely occupied by Al. Magnetic susceptibility measurements reveal antiferromagnetic ordering with TN =more » 4.8 K and there is no evidence for a ferromagnetic ordering that has been reported for Ce₃Al₁₁. The effective magnetic moment was found to be μeff = 1.9μB/Ce, which is lower than the expected value for trivalent Ce (2.54μB/Ce).« less

  18. Effects of the interplay between atomic and magnetic order on the properties of metamagnetic Ni-Co-Mn-Ga shape memory alloys

    SciTech Connect (OSTI)

    Seguí, C.

    2014-03-21

    Ni-Co-Mn-Ga ferromagnetic shape memory alloys show metamagnetic behavior for a range of Co contents. The temperatures of the structural and magnetic transitions depend strongly on composition and atomic order degree, in such a way that combined composition and thermal treatment allows obtaining martensitic transformation between any magnetic state of austenite and martensite. This work presents a detailed analysis of the effect of atomic order on Ni-Co-Mn-Ga alloys through the evolution of structural and magnetic transitions after quench from high temperatures and during post-quest ageing. It is found that the way in which the atomic order affects the martensitic transformation temperatures and entropy depends on the magnetic order of austenite and martensite. The results can be explained assuming that improvement of atomic order decreases the free energy of the structural phases according to their magnetic order. However, it is assumed in this work that changes in the slope—that is, the entropy—of the Gibbs free energy curves are also decisive to the stability of the two-phase system. The experimental transformation entropy values have been compared with a phenomenological model, based on a Bragg–Williams approximation, accounting for the magnetic contribution. The excellent agreement obtained corroborates the magnetic origin of changes in transformation entropy brought about by atomic ordering.

  19. Influence of boron on the microstructural and mechanical properties of Ni{sub 53.5}Mn{sub 26.0}Ga{sub 20.5} shape memory alloy

    SciTech Connect (OSTI)

    Ramudu, M. Kumar, A. Satish Seshubai, V.; Rajasekharan, T.

    2014-04-24

    Boron addition to Ni{sub 53.5}Mn{sub 26.0}Ga{sub 20.5} alloy is found to modify the microstructure and mechanical properties substantially. Studies on (Ni{sub 53.5}Mn{sub 26.0}Ga{sub 20.5})B{sub x} alloys reveal that boron addition causes grain refinement which led to an increase in compressive strength in x=0.5 alloy which also retained multimode twinning. Substantial second phase segregation rich in Ni was seen at grain boundaries, the extent of which increased with boron content. This led to a compositional shift in the matrix phase which resulted in a reduction in the martensitic transformation temperature and which in turn caused an easy deformation at low stresses and suppression of multimode twinning in x=1.0 alloy.

  20. Investigations on the electronic transport and piezoresistivity properties of Ni{sub 2?X}Mn{sub 1+X}Ga (X?=?0 and 0.15) Heusler alloys under hydrostatic pressure

    SciTech Connect (OSTI)

    Devarajan, U.; Kalai Selvan, G.; Sivaprakash, P.; Arumugam, S.; Singh, Sanjay; Esakki Muthu, S.; Roy Barman, S.

    2014-12-22

    The resisitivity of Ni{sub 2?X}Mn{sub 1+X}Ga (X?=?0 and 0.15) magnetic shape memory alloys has been investigated as a function of temperature (4300?K) and hydrostatic pressure up to 30 kilobars. The resistivity is suppressed (X?=?0) and enhanced (X?=?0.15) with increasing pressure. A change in piezoresistivity with respect to pressure and temperature is observed. The negative and positive piezoresistivity increases with pressure for both the alloys. The residual resistivity and electron-electron scattering factor as a function of pressure reveal that for Ni{sub 2}MnGa the electron-electron scattering is predominant, while the X?=?0.15 specimen is dominated by the electron-magnon scattering. The value of electron-electron scattering factor is positive for both the samples, and it is decreasing (negative trend) for Ni{sub 2}MnGa and increasing (positive trend) for X?=?0.15 with pressure. The martensite transition temperature is found to be increased with the application of external pressure for both samples.

  1. Neutron diffraction study of the martensitic transformation and chemical order in Heusler alloy Ni1.91Mn1.29Ga0.8

    SciTech Connect (OSTI)

    Ari-Gur, Pnina; Garlea, Vasile O.; Cao, Huibo; Ge, Y.; Aaltio, I.; Hannula, S. P.; Koledov, V.

    2015-11-05

    In this study, Heusler alloys of Ni-Mn-Ga compositions demonstrate ferromagnetic shape memory effect in the martensitic state. The transformation temperature and the chemical order depend strongly on the composition. In the current work, the structure and chemical order of the martensitic phase of Ni1.91Mn1.29Ga0.8 were studied using neutron diffraction; the diffraction pattern was refined using the FullProf software. It was determined that the structural transition occurs around 330 K. At room temperature, 300 K, which is below the martensite transformation temperature, all the Bragg reflections can be described by a monoclinic lattice with a symmetry of space group P 1 2/m 1 and lattice constants of a = 4.23047(7) [Å], b = 5.58333(6) [Å], c = 21.0179(2) [Å], beta = 90.328(1). The chemical order is of critical importance in these alloys, and it was previously studied at 363 K. Analysis of the neutron diffraction in the monoclinic phase shows that the chemical order is maintained during the martensitic transformation.

  2. High strain in polycrystalline Ni{sub 48.8}Mn{sub 31.4}Ga{sub 19.8} Heusler alloys under overlapped static and oscillating magnetic fields

    SciTech Connect (OSTI)

    Montanher, D. Z.; Pereira, J. R. D.; Cótica, L. F.; Santos, I. A.; Gotardo, R. A. M.; Viana, D. S. F.; Garcia, D.; Eiras, J. A.

    2014-09-21

    Martensitic polycrystalline Ni{sub 48.8}Mn{sub 31.4}Ga{sub 19.8} Heusler alloys, with a stacking period of 14 atomic planes at room temperature, were innovatively processed by combining high-energy ball milling and powder metallurgy. Bulk samples were mechanically coupled to a piezoelectric material in a parallel configuration, and the mechanical deformation of the studied system due to the twin's variant motion was investigated under overlapped static and oscillating magnetic fields. A reversible and high mechanical deformation is observed when the frequency of the oscillating magnetic field is tuned with the natural vibration frequency of this system. In this condition, a linear deformation as a function of the static magnetic field amplitude occurs in the ±4 kOe range, and a mechanical deformation of 2% at 10 kOe is observed.

  3. Electrochemical characterization of B-site cation-excess Pr2Ni0.75Cu0.25Ga0.05O4+δ cathode for IT-SOFCs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Meng, Xiangwei; Lü, Shiquan; Liu, Shouxiu; Liu, Xiaoyan; Sui, Yingrui; Li, Xiuyan; Pang, Mingjun; Wang, Biao; Ji, Yuan; Hu, Michael Z.

    2015-06-15

    In this paper, the B-site cation-excess K2NiF4-type structure oxide, Pr2Ni0.75Cu0.25Ga0.05O4+δ (PNCG) is investigated as a cathode for intermediate-temperature solid oxide fuel cells (IT-SOFCs). XRD result shows that PNCG cathode is chemically compatible with the electrolyte Gd0.1Ce0.9O2-δ (GDC) at 900 °C for 5 h. The PNCG material exhibits a semiconductor to metal transition around 425 °C. The thermal expansion coefficient (TEC) of the PNCG sample is 12.72×10-6 K-1 between 30 and 850 °C in air. The polarization resistance (Rp) of PNCG cathode on GDC electrolyte is 0.105, 0.197 and 0.300 Ω cm2 at 800, 750, 700 °C, respectively. A maximum powermore » density of 371 mW cm-2 is obtained at 800 °C for single-cell with 300 μm thick GDC electrolyte and PNCG cathode. Finally, the results of this study demonstrate that PNCG can be a promising cathode material for IT-SOFCs.« less

  4. Ni Ni: University of California - Los Angeles

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ni Ni: University of California - Los Angeles Alumni Link: Opportunities, News and Resources for Former Employees Latest Issue:September 2015 all issues All Issues » submit Ni Ni: University of California - Los Angeles Condensed matter January 1, 2015 Ni Ni Ni Ni Contact Linda Anderman Email Ni Ni Ni Ni now at the University of California-Los Angeles After finishing her work at Princeton, Ni Ni began at the Lab as a postdoc in 2012 with the Condensed Matter and Magnetic Science Group. Ni was

  5. Ni-Mn-Ga shape memory nanoactuation

    SciTech Connect (OSTI)

    Kohl, M. Schmitt, M.; Krevet, B.; Backen, A.; Schultz, L.; Fhler, S.

    2014-01-27

    To probe finite size effects in ferromagnetic shape memory nanoactuators, double-beam structures with minimum dimensions down to 100?nm are designed, fabricated, and characterized in-situ in a scanning electron microscope with respect to their coupled thermo-elastic and electro-thermal properties. Electrical resistance and mechanical beam bending tests demonstrate a reversible thermal shape memory effect down to 100?nm. Electro-thermal actuation involves large temperature gradients along the nanobeam in the order of 100?K/?m. We discuss the influence of surface and twin boundary energies and explain why free-standing nanoactuators behave differently compared to constrained geometries like films and nanocrystalline shape memory alloys.

  6. Electrochemical characterization of B-site cation-excess Pr2Ni0.75Cu0.25Ga0.05O4+δ cathode for IT-SOFCs

    SciTech Connect (OSTI)

    Meng, Xiangwei; Lü, Shiquan; Liu, Shouxiu; Liu, Xiaoyan; Sui, Yingrui; Li, Xiuyan; Pang, Mingjun; Wang, Biao; Ji, Yuan; Hu, Michael Z.

    2015-06-15

    In this paper, the B-site cation-excess K2NiF4-type structure oxide, Pr2Ni0.75Cu0.25Ga0.05O4+δ (PNCG) is investigated as a cathode for intermediate-temperature solid oxide fuel cells (IT-SOFCs). XRD result shows that PNCG cathode is chemically compatible with the electrolyte Gd0.1Ce0.9O2-δ (GDC) at 900 °C for 5 h. The PNCG material exhibits a semiconductor to metal transition around 425 °C. The thermal expansion coefficient (TEC) of the PNCG sample is 12.72×10-6 K-1 between 30 and 850 °C in air. The polarization resistance (Rp) of PNCG cathode on GDC electrolyte is 0.105, 0.197 and 0.300 Ω cm2 at 800, 750, 700 °C, respectively. A maximum power density of 371 mW cm-2 is obtained at 800 °C for single-cell with 300 μm thick GDC electrolyte and PNCG cathode. Finally, the results of this study demonstrate that PNCG can be a promising cathode material for IT-SOFCs.

  7. Crystallographic, magnetic, and electronic structures of ferromagnetic shape memory alloys Ni{sub 2}XGa (X=Mn,Fe,Co) from first-principles calculations

    SciTech Connect (OSTI)

    Bai, J.; Raulot, J. M.; Zhang, Y. D.; Esling, C.; Zhao, X.; Zuo, L.

    2011-01-01

    The crystallographic, magnetic and electronic structures of the ferromagnetic shape memory alloys Ni{sub 2}XGa (X=Mn, Fe, and Co), are systematically investigated by means of the first-principles calculations within the framework of density functional theory using the VIENNA AB INITIO SOFTWARE PACKAGE. The lattice parameters of both austenitic and martensitic phases in Ni{sub 2}MnGa have been calculated. The formation energies of the cubic phase of Ni{sub 2}XGa are estimated, and show a destabilization tendency if Mn atom is substituted by Fe or Co. From Ni{sub 2}MnGa to Ni{sub 2}CoGa, the down spin total density of states (DOS) at Fermi level is gradually increasing, whereas that of the up spin part remains almost unchanged. This is the main origin of the difference of the magnetic moment in these alloys. The partial DOS is dominated by the Ni and Mn 3d states in the bonding region below E{sub F}. There are two bond types existing in Ni{sub 2}XGa: one is between neighboring Ni atoms in Ni{sub 2}MnGa; the other is between Ni and X atoms in Ni{sub 2}FeGa and Ni{sub 2}CoGa alloys.

  8. Blending Cr2O3 into a NiO-Ni electrocatalyst for sustained water splitting

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gong, Ming; Zhou, Wu; Kenney, Michael James; Kapusta, Rich; Cowley, Sam; Wu, Yingpeng; Lu, Bingan; Lin, Meng -Chang; Wang, Di -Yan; Yang, Jiang; et al

    2015-08-24

    The rising H2 economy demands active and durable electrocatalysts based on low-cost, earth-abundant materials for water electrolysis/photolysis. Here we report nanoscale Ni metal cores over-coated by a Cr2O3-blended NiO layer synthesized on metallic foam substrates. The Ni@NiO/Cr2O3 triphase material exhibits superior activity and stability similar to Pt for the hydrogen-evolution reaction in basic solutions. The chemically stable Cr2O3 is crucial for preventing oxidation of the Ni core, maintaining abundant NiO/Ni interfaces as catalytically active sites in the heterostructure and thus imparting high stability to the hydrogen-evolution catalyst. The highly active and stable electrocatalyst enables an alkaline electrolyzer operating at 20more » mA cm–2 at a voltage lower than 1.5 V, lasting longer than 3 weeks without decay. Thus, the non-precious metal catalysts afford a high efficiency of about 15 % for light-driven water splitting using GaAs solar cells.« less

  9. Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature

    SciTech Connect (OSTI)

    Schmid, A. Schroeter, Ch.; Otto, R.; Heitmann, J.; Schuster, M.; Klemm, V.; Rafaja, D.

    2015-02-02

    Ohmic contacts with V/Al/Ni/Au and V/Ni/Au metalization schemes were deposited on AlGaN/GaN heterostructures. The dependence of the specific contact resistance on the annealing conditions and the V:Al thickness ratio was shown. For an optimized electrode stack, a low specific contact resistance of 8.9??10{sup ?6} ? cm{sup 2} was achieved at an annealing temperature of 650?C. Compared to the conventional Ti/Al/Ni/Au contact, this is a reduction of 150?K. The microstructure and contact formation at the AlGaN/metal interface were investigated by transmission electron microscopy including high-resolution micrographs and energy dispersive X-ray analysis. It was shown that for low-resistive contacts, the resistivity of the metalization has to be taken into account. The V:Al thickness ratio has an impact on the formation of different intermetallic phases and thus is crucial for establishing ohmic contacts at reduced annealing temperatures.

  10. General Atomics (GA) | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Atomics (GA) Subscribe to RSS - General Atomics (GA) General Atomics Image: General Atomics (GA) The Scorpion's Strategy: "Catch and Subdue" Read more about The Scorpion's...

  11. Structure, transport and thermal properties of UCoGa

    SciTech Connect (OSTI)

    Purwanto, A.; Robinson, R.A.; Prokes, K.

    1994-04-01

    By means of neutron powder diffraction, we find that UCoGa crystallizes in the hexagonal ZrNiAl structure and orders ferromagnetically at low temperatures with magnetic moments stacked along the c axis. The magnetic-ordering temperature is reflected in anomalies in the temperature dependencies of the electrical resistivity and the specific heat at Tc = 47 K. Furthermore, the strong anisotropy in the electrical resistivity for i {parallel} c and i {perpendicular} c indicates a significant contribution of the magnetic anisotropy to the electrical resistivity.

  12. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Mreke, Janina Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  13. Blending Cr2O3 into a NiO-Ni electrocatalyst for sustained water splitting

    SciTech Connect (OSTI)

    Gong, Ming; Zhou, Wu; Kenney, Michael James; Kapusta, Rich; Cowley, Sam; Wu, Yingpeng; Lu, Bingan; Lin, Meng -Chang; Wang, Di -Yan; Yang, Jiang; Hwang, Bing -Joe; Dai, Hongjie

    2015-08-24

    The rising H2 economy demands active and durable electrocatalysts based on low-cost, earth-abundant materials for water electrolysis/photolysis. Here we report nanoscale Ni metal cores over-coated by a Cr2O3-blended NiO layer synthesized on metallic foam substrates. The Ni@NiO/Cr2O3 triphase material exhibits superior activity and stability similar to Pt for the hydrogen-evolution reaction in basic solutions. The chemically stable Cr2O3 is crucial for preventing oxidation of the Ni core, maintaining abundant NiO/Ni interfaces as catalytically active sites in the heterostructure and thus imparting high stability to the hydrogen-evolution catalyst. The highly active and stable electrocatalyst enables an alkaline electrolyzer operating at 20 mA cm2 at a voltage lower than 1.5 V, lasting longer than 3 weeks without decay. Thus, the non-precious metal catalysts afford a high efficiency of about 15 % for light-driven water splitting using GaAs solar cells.

  14. GA SNC Solar | Open Energy Information

    Open Energy Info (EERE)

    GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and Sierra Nevada Corp. References: GA-SNC...

  15. Mo{sub 2}NiB{sub 2}-type (Gd, Tb, Dy){sub 2}Ni{sub 2.35}Si{sub 0.65} and La{sub 2}Ni{sub 3}-type (Dy, Ho){sub 2}Ni{sub 2.5}Si{sub 0.5} compounds: Crystal structure and magnetic properties

    SciTech Connect (OSTI)

    Morozkin, A.V.; Isnard, O.; Nirmala, R.; Malik, S.K.

    2015-05-15

    earth compounds. The variation of alloy’s composition by ~3 at% i.e. from Dy{sub 2}Ni{sub 2.35}Si{sub 0.65} to Dy{sub 2}Ni{sub 2.5}Si{sub 0.5} leads to significant transformation of crystal structure of compound with different variant of distortion of Po-type rare earth sublattice, as in Gd–Co–Ga and Er–Ni–In systems: the Mo{sub 2}NiB{sub 2}-type Gd{sub 2}Co{sub 2}Ga and La{sub 2}Ni{sub 3}-type Gd{sub 2}Co{sub 2.9}Ga{sub 0.1}, and Mo{sub 2}FeB{sub 2}-type Er{sub 2}Ni{sub 1.78}In and Mn{sub 2}AlB{sub 2}-type Er{sub 2}Ni{sub 2}In. Magnetization measurements indicate collinear ferromagnetic ordering of Mo{sub 2}NiB{sub 2}-type Gd{sub 2}Ni{sub 2.35}Si{sub 0.65} and a complex antiferromagnetic ordering with low-temperature metamagnetic nature for Mo{sub 2}NiB{sub 2}-type Tb{sub 2}Ni{sub 2.35}Si{sub 0.65} compounds. However, neutron diffraction study in zero applied field of Tb{sub 2}Ni{sub 2.35}Si{sub 0.65} reveals c-axis pure antiferromagnetic ordering of terbium sublattice with K=[1/2, 0, 1/2] propagation vector. Magnetization measurements indicate ferromagnetic order with coexisting antiferromagnetic interactions and low-temperature metamagnetic state for La{sub 2}Ni{sub 3}-type Dy{sub 2}Ni{sub 2.5}Si{sub 0.5}. We suggest possible polymorphism in other Mo{sub 2}FeB{sub 2}-type, Mo{sub 2}NiB{sub 2}-type, La{sub 2}Ni{sub 3}-type and Mn{sub 2}AlB{sub 2}-type rare earth compounds with corresponding change in their magnetic properties. - Highlights: • (Gd, Tb, Dy){sub 2}Ni{sub 2.35}Si{sub 0.65} compounds crystallize in the Mo{sub 2}NiB{sub 2}-type structure. • (Dy, Ho){sub 2}Ni{sub 2.5}Si{sub 0.5} compounds crystallize in the La{sub 2}Ni{sub 3}-type structure. • Gd{sub 2}Ni{sub 2.35}Si{sub 0.65} shows pure ferromagnetic type ordering. • Tb{sub 2}Ni{sub 2.35}Si{sub 0.65} and Dy{sub 2}Ni{sub 2.5}Si{sub 0.5} show mixed ferro-antiferromagnetic ordering. • Tb{sub 2}Ni{sub 2.35}Si{sub 0.65} and Dy{sub 2}Ni{sub 2.5}Si{sub 0.5} exhibit low-temperature metamagnetic

  16. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  17. Airtricity Developments NI Ltd | Open Energy Information

    Open Energy Info (EERE)

    Airtricity Developments NI Ltd Jump to: navigation, search Name: Airtricity Developments NI Ltd Place: Belfast, Northern Ireland, United Kingdom Zip: BT2 7AF Sector: Wind energy...

  18. SF 6432-NI (04-95)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Retrieve latest version electronically. SF 6432-NI (061411) SECTION II STANDARD TERMS ... Control : SF 6432-NI Title: Standard Terms & Conditions for Fixed Price Contracts With ...

  19. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  20. Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

    SciTech Connect (OSTI)

    Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Aho, Timo; Raappana, Marianna; Guina, Mircea

    2015-09-28

    We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.

  1. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  2. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  3. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  4. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  5. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  6. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  7. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

    SciTech Connect (OSTI)

    Kalentyeva, I. L. Zvonkov, B. N.; Vikhrova, O. V.; Danilov, Yu. A.; Demina, P. B.; Dorokhin, M. V.; Zdoroveyshchev, A. V.

    2015-11-15

    InGaAs/GaAsSb/GaAs bilayer quantum-well structures containing a magnetic-impurity δ-layer (Mn) at the GaAs/InGaAs interface are experimentally studied for the first time. The structures are fabricated by metal organic chemical-vapor deposition (MOCVD) and laser deposition on substrates of conducting (n{sup +}) and semi-insulating GaAs in a single growth cycle. The InGaAs-layer thickness is varied from 1.5 to 5 nm. The significant effect of a decrease in the InGaAs quantum-well thickness on the optical and magnetotransport properties of the structures under study is detected. Nonlinear magnetic-field dependence of the Hall resistance and negative magnetoresistance at temperatures of ≤30–40 K, circular polarization of the electroluminescence in a magnetic field, opposite behaviors of the photoluminescence and electroluminescence emission intensities in the structures, and an increase in the contribution of indirect transitions with decreasing InGaAs thickness are observed. Simulation shows that these effects can be caused by the influence of the δ-layer of acceptor impurity (Mn) on the band structure and the hole concentration distribution in the bilayer quantum well.

  8. Patterned Exfoliation of GaAs Based on Masked Helium Implantation and Subsequent Rapid Thermal Annealing

    SciTech Connect (OSTI)

    Woo, H. J.; Choi, H. W.; Kim, G. D.; Hong, W.; Kim, J. K.

    2009-03-10

    A method of patterning single crystal GaAs based on ion implantation induced selective area exfoliation is suggested. Samples were implanted with 200-500 keV helium ions to a fluence range of 2-4x10{sup 16} He{sup +}/cm{sup 2} at room temperature through masks of Ni mesh (40 {mu}m opening) or stainless steel wire (50 {mu}m in diameter), and subsequent rapid thermal annealing at 350-500{open_square} resulted in expulsion of ion beam exposed material. The influences of ion energy, ion fluence, implantation temperature, subsequent annealing conditions (temperature and ramp rate), and mask pattern and its orientation with GaAs lattice on the patterned exfoliation were examined.

  9. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs...

    Office of Scientific and Technical Information (OSTI)

    irradiated AlGaNGaN HEMTs This content will become publicly available on August 26, 2016 Title: Degradation mechanisms of 2 MeV proton irradiated AlGaNGaN HEMTs Authors: ...

  10. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  11. (In,Ga)As/GaP electrical injection quantum dot laser

    SciTech Connect (OSTI)

    Heidemann, M. Höfling, S.; Kamp, M.

    2014-01-06

    The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm{sup 2} at a heat-sink temperature of 80 K.

  12. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  13. Ni-Mn-Ga shape memory nanoactuation (Journal Article) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    Subject: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; BENDING; COMPARATIVE EVALUATIONS; CRYSTALS; ELECTRIC CONDUCTIVITY; ...

  14. Materials Data on TiGaNi2 (SG:225) by Materials Project

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Kristin Persson

    2014-11-02

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  15. Materials Data on CeGaNi (SG:189) by Materials Project

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Kristin Persson

    2014-11-02

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  16. Materials Data on Ti4Ga3Ni2 (SG:189) by Materials Project

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Kristin Persson

    2014-11-02

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  17. Materials Data on Ga4Ni3 (SG:230) by Materials Project

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Kristin Persson

    2015-03-09

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  18. Materials Data on HoGa4Ni (SG:63) by Materials Project

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Kristin Persson

    2015-02-20

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  19. Materials Data on Zn36Ga5Ni8 (SG:215) by Materials Project

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Kristin Persson

    2015-03-10

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  20. Materials Data on TiGaNi (SG:189) by Materials Project

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Kristin Persson

    2014-11-02

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  1. Mn deposition on Ni{sub 2}MnGa(100) (Journal Article) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    The spot profile analysis indicates that after 0.2 monolayer (ML) deposition, the LEED ... (c) 2012 American Institute of Physics; Country of input: International Atomic Energy ...

  2. Electronic structure of Co-Ni-Ga Heusler alloys studied by resonant...

    Office of Scientific and Technical Information (OSTI)

    to understand the features in the valence band and the shape of the resonance profile. ... (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy ...

  3. Coexistence of charge-density wave and ferromagnetism in Ni2MnGa...

    Office of Scientific and Technical Information (OSTI)

    MLA APA Chicago Bibtex Export Metadata Endnote Excel CSV XML Send to Email Send to Email Email address: Content: Close Send Cite: MLA Format Close Cite: APA Format ...

  4. Multiscale twin hierarchy in NiMnGa shape memory alloys with...

    Office of Scientific and Technical Information (OSTI)

    Additional Journal Information: Journal Volume: 87; Journal Issue: C; Journal ID: ISSN 1359-6454 Publisher: Elsevier Sponsoring Org: USDOE Office of Science (SC), Basic Energy ...

  5. Multiscale twin hierarchy in NiMnGa shape memory alloys with...

    Office of Scientific and Technical Information (OSTI)

    Authors: Barabash, Rozaliya I. ; Barabash, Oleg M. ; Popov, Dmitry ; Shen, Guoyin ; Park, Changyong ; Yang, Wenge 1 ; ORNL) 2 ; CIW) 2 ; CHPSTAR- China) 2 + Show Author ...

  6. Structure and magnetic properties of Ce?(Ni/Al/Ga)??-A...

    Office of Scientific and Technical Information (OSTI)

    Z 2) with a 436.38(14), b 1004.5(3) and c 1293.4(4) pm. This is a standardized unit cell of the previously published LaAl structure type. Wavelength dispersive...

  7. Materials Data on Ga2NiO4 (SG:74) by Materials Project

    SciTech Connect (OSTI)

    Kristin Persson

    2014-11-02

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  8. Enhanced magnetic hysteresis in Ni-Mn-Ga single crystal and its...

    Office of Scientific and Technical Information (OSTI)

    OSTI Identifier: 22410164 Resource Type: Journal Article Resource Relation: Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 17; Other Information: (c) ...

  9. Modulation on Ni{sub 2}MnGa(001) surface (Journal Article) |...

    Office of Scientific and Technical Information (OSTI)

    Manipal (India), 26-30 Dec 2010; Other Information: DOI: 10.10631.3606084; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA) ...

  10. Static critical phenomena in Co-Ni-Ga ferromagnetic shape memory...

    Office of Scientific and Technical Information (OSTI)

    Study of critical phenomenon in such materials has received increased experimental and theoretical attention for better understanding of the magnetic phase transition behavior as ...

  11. Structural and Dynamical Fluctuations in Off-Stoichiometric NiMnGa Shape-Memory Alloys

    SciTech Connect (OSTI)

    Barabash, Rozaliya; Barabash, Oleg M; Karapetrova, Evgenia; Manley, Michael E

    2014-01-01

    3D diffuse scattering dataset in the temperature region of the existence of high temperature cubic L21 phase reveals localized intensity maxima related to phason modes. Peierls instability induced tetragonal distortions in the pre-martensitic phase cause strong diffuse scattering. Around (H0H) reflections diffuse scattering is strongly compressed along the [H0H] and enhanced along the [-H0H] direction.

  12. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  13. A hole modulator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2015-02-09

    The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ?332?meV to ?294?meV at 80?A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

  14. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A.; Fujioka, H.

    2014-05-05

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  15. Significant Reduction in NiO Band Gap Upon Formation of LixNi1...

    Office of Scientific and Technical Information (OSTI)

    Significant Reduction in NiO Band Gap Upon Formation of LixNi1-xO alloys: Applications To Solar Energy Conversion Citation Details In-Document Search Title: Significant Reduction ...

  16. SF 6432-NI (02-22-10)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    be controlling. All deliverables under this Contract shall use andor be in the English language. NI14 - PAYMENT Contractor agrees to provide invoices within 60 days of...

  17. SF 6432-NI (04-95)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    be controlling. All deliverables under this Contract shall use andor be in the English language. NI15 - PAYMENT Contractor agrees to provide invoices within 60 days of...

  18. SF 6432-NI (04-95)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    be controlling. All deliverables under this Contract shall use andor be in the English language. NI14 - PAYMENT Contractor agrees to provide invoices within 60 days of...

  19. SF 6432-NI (04-95)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    descending order of precedence: (1) Section I; (2) SF 6432-NI, Section II. The English language version of this Contract shall be controlling. All deliverables under this...

  20. Ni Clusterbank Replacement Project | Argonne Leadership Computing...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ni Clusterbank Replacement Project Event Sponsor: Argonne Leadership Computing Facility Seminar Start Date: Oct 20 2015 - 12:00pm BuildingRoom: Building 241Room D173...

  1. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Final Environmental Impact Statement EIS-0476: ...

  2. Carrier quenching in InGaP/GaAs double heterostructures

    SciTech Connect (OSTI)

    Wells, Nathan P. Driskell, Travis U.; Hudson, Andrew I.; LaLumondiere, Stephen D.; Lotshaw, William T.; Forbes, David V.; Hubbard, Seth M.

    2015-08-14

    Photoluminescence measurements on a series of GaAs double heterostructures demonstrate a rapid quenching of carriers in the GaAs layer at irradiance levels below 0.1 W/cm{sup 2} in samples with a GaAs-on-InGaP interface. These results indicate the existence of non-radiative defect centers at or near the GaAs-on-InGaP interface, consistent with previous reports showing the intermixing of In and P when free As impinges on the InGaP surface during growth. At low irradiance, these defect centers can lead to sub-ns carrier lifetimes. The defect centers involved in the rapid carrier quenching can be saturated at higher irradiance levels and allow carrier lifetimes to reach hundreds of nanoseconds. To our knowledge, this is the first report of a nearly three orders of magnitude decrease in carrier lifetime at low irradiance in a simple double heterostructure. Carrier quenching occurs at irradiance levels near the integrated Air Mass Zero (AM0) and Air Mass 1.5 (AM1.5) solar irradiance. Additionally, a lower energy photoluminescence band is observed both at room and cryogenic temperatures. The temperature and time dependence of the lower energy luminescence is consistent with the presence of an unintentional InGaAs or InGaAsP quantum well that forms due to compositional mixing at the GaAs-on-InGaP interface. Our results are of general interest to the photovoltaic community as InGaP is commonly used as a window layer in GaAs based solar cells.

  3. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J. Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y.

    2014-09-08

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  4. Oxidation of ultrathin GaSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  5. Oxidation of ultrathin GaSe

    SciTech Connect (OSTI)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  6. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  7. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  8. Zinc blende GaAs films grown on wurtzite GaN/sapphire templates

    SciTech Connect (OSTI)

    Chaldyshev, V.V.; Nielsen, B.; Mendez, E.E.; Musikhin, Yu.G.; Bert, N.A.; Ma, Zh.; Holden, Todd

    2005-03-28

    1-{mu}m-thick zinc-blende GaAs (111) films were grown by molecular-beam epitaxy on wurtzite GaN/sapphire (0001) templates. In spite of a {approx}20% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesion and their surface had a larger mirror-like area with an average surface roughness of 10 nm. Transmission electron microscopy revealed a flat and abrupt epitaxial GaAs/GaN interface with some nanocavities and a large number of dislocations. Reasonably good crystalline quality of the GaAs films was confirmed by Raman characterization. Spectroscopic ellipsometry showed sharp interference fringes and characteristic parameters in the range of 0.75-5.3 eV. Photoluminescence study revealed extended band tails and dominance of non-radiative carrier recombination.

  9. Princeton Plasma Physics Lab - General Atomics (GA)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http:www.pppl.govnode1132

  10. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash Biswas, Dhrubes

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  11. Vykson Formerly Turbine Developments NI Ltd | Open Energy Information

    Open Energy Info (EERE)

    Vykson Formerly Turbine Developments NI Ltd Jump to: navigation, search Name: Vykson (Formerly Turbine Developments (NI) Ltd) Place: Canterbury, England, United Kingdom Zip: BR6...

  12. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  13. Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

    SciTech Connect (OSTI)

    Wang, M.; Wadley, P.; Campion, R. P.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L.; Charlton, T. R.; Kinane, C. J.; Langridge, S.

    2015-08-07

    We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

  14. Accelerated aging of GaAs concentrator solar cells

    SciTech Connect (OSTI)

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  15. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5??10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  16. GaP ring-like nanostructures on GaAs (100) with In{sub 0.15}Ga{sub 0.85}As compensation layers

    SciTech Connect (OSTI)

    Prongjit, Patchareewan Pankaow, Naraporn Boonpeng, Poonyasiri Thainoi, Supachok Panyakeow, Somsak Ratanathammaphan, Somchai

    2013-12-04

    We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In{sub 0.15}Ga{sub 0.85}As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In{sub 0.15}Ga{sub 0.85}As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In{sub 0.15}Ga{sub 0.85}As layer thickness.

  17. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  18. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  19. Ga, Ca, and 3d transition element (Cr through Zn) partitioning among spinel-lherzolite phases from the Lanzo massif, Italy: Analytical results and crystal chemistry

    SciTech Connect (OSTI)

    Wogelius, R.A.; Fraser, D.G.

    1994-06-01

    Ultramafic rocks exposed in Lanzo massif, Italy is a record of mantle geochemistry, melting, sub-solidus re-equilibration. Plagioclase(+ spinel)-lherzolite samples were analyzed by Scanning Proton Microscopy, other techniques. Previous work postulated partial melting events and a two-stage sub-solidus cooling history; this paper notes Ga enrichment on spinel-clinopyroxene grain boundaries, high Ga and transition element content of spinel, and pyroxene zonation in Ca and Al. Trace element levels in olivine and orthopyroxene are also presented. Zoning trends are interpreted as due to diffusion during cooling. Olivine-clinopyroxene Cr and Ca exchange as well as clinopyroxene and spinel zonation trends indicate that the massif experienced at least two sub-solidus cooling episodes, one at 20 kbar to 1000 C and one at 8 kbar <750C. Ga levels in cores of Lanzo high-Cr spinels are high (82-66 ppM) relative to other mantle spinels (66-40 ppM), indicating enrichment. Ga content of ultramafic spinels apparently increases with Cr content; this may be due to: increased Ga solubility stemming from crystal chemical effects and/or higher Ga activities in associated silicate melts. Thus, during melting, high-Cr residual spinel may tend to buffer solid-phase Ga level. These spinels are not only rich in Ga and Cr (max 26.37 el. wt %), but also in Fe (max 21.07 el. wt %), Mn (max 3400 ppM), and Zn (max 2430 ppM). These enrichments are again due to melt extraction and partitioning into spinel structure. Low Ni (min 1050 ppM) levels are due to unsuccessful competition of Ni with Cr for octahedral structural sites caused by crystal field. Comparisons of change in partitioning vs Cr content among several 3d transition elements for spinels from Lanzo, other localities allow us to separate crystal field effects from bulk chemical effects and to show that in typical assemblages, inversion of olivine-spinel partition coefficient for Ni from <1 to >1 should occur at 11% el. wt. Cr in spinel.

  20. Indium out-diffusion in Al{sub 2}O{sub 3}/InGaAs stacks during anneal at different ambient conditions

    SciTech Connect (OSTI)

    Krylov, Igor; Winter, Roy; Ritter, Dan; Eizenberg, Moshe

    2014-06-16

    Indium out-diffusion during anneal enhances leakage currents in metal/dielectric/InGaAs gate stacks. In this work, we study the influence of ambient conditions during anneal on indium out-diffusion in Al{sub 2}O{sub 3}/InGaAs structures, prior to the gate metal deposition. Using X-ray photoemission spectroscopy and time of flight secondary ions mass spectrometry, we observed much lower indium concentrations in the Al{sub 2}O{sub 3} layer following vacuum and O{sub 2} anneals compared to forming gas or nitrogen anneals. The electrical characteristics of the Ni/Al{sub 2}O{sub 3}/InGaAs gate stack following these pre-metallization anneals as well as after subsequent post metallization anneals are presented. Possible explanations for the role of the annealing ambient conditions on indium out-diffusion are presented.

  1. Temperature-induced martensite in magnetic shape memory Fe{sub 2}MnGa observed by photoemission electron microscopy

    SciTech Connect (OSTI)

    Jenkins, Catherine; Scholl, Andreas; Kainuma, R.; Elmers, Hans-Joachim; Omori, Toshihiro

    2012-01-18

    The magnetic domain structure in single crystals of a Heusler shape memory compound near the composition Fe{sub 2}MnGa was observed during phase transition by photoelectron emission microscopy at Beamline 11.0.1.1 of the Advanced Light Source. The behavior is comparable with recent observations of an adaptive martensite phase in prototype Ni{sub 2}MnGa, although the pinning in the recent work is an epitaxial interface and in this work the e#11;ective pinning plane is a boundary between martensitic variants that transform in a self-accommodating way from the single crystal austenite phase present at high temperatures. Temperature dependent observations of the twinning structure give information as to the coupling behavior between the magnetism and the structural evolution.

  2. Ion irradiation induced defect evolution in Ni and Ni-based FCC equiatomic binary alloys

    SciTech Connect (OSTI)

    Jin, Ke; Zhang, Yanwen; Bei, Hongbin

    2016-01-01

    In order to explore the chemical effects on radiation response of alloys with multi-principal elements, defect evolution under Au ion irradiation was investigated in the elemental Ni, equiatomic NiCo and NiFe alloys. Single crystals were successfully grown in an optical floating zone furnace and their (100) surfaces were irradiated with 3 MeV Au ions at fluences ranging from 1 × 1013 to 5 × 1015 ions cm–2 at room temperature. The irradiation-induced defect evolution was analyzed by using ion channeling technique. Experiment shows that NiFe is more irradiation-resistant than NiCo and pure Ni at low fluences. With continuously increasing the ion fluences, damage level is eventually saturated for all materials but at different dose levels. The saturation level in pure Ni appears at relatively lower irradiation fluence than the alloys, suggesting that damage accumulation slows down in the alloys. Here, under high-fluence irradiations, pure Ni has wider damage ranges than the alloys, indicating that defects in pure Ni have high mobility.

  3. Layering and temperature-dependent magnetization and anisotropy of naturally produced Ni/NiO multilayers

    SciTech Connect (OSTI)

    Pappas, S. D.; Trachylis, D.; Velgakis, M. J.; Kapaklis, V.; Joensson, P. E.; Papaioannou, E. Th.; Delimitis, A.; Poulopoulos, P.; Fumagalli, P.; Politis, C.

    2012-09-01

    Ni/NiO multilayers were grown by magnetron sputtering at room temperature, with the aid of the natural oxidation procedure. That is, at the end of the deposition of each single Ni layer, air is let to flow into the vacuum chamber through a leak valve. Then, a very thin NiO layer ({approx}1.2 nm) is formed. Simulated x-ray reflectivity patterns reveal that layering is excellent for individual Ni-layer thickness larger than 2.5 nm, which is attributed to the intercalation of amorphous NiO between the polycrystalline Ni layers. The magnetization of the films, measured at temperatures 5-300 K, has almost bulk-like value, whereas the films exhibit a trend to perpendicular magnetic anisotropy (PMA) with an unusual significant positive interface anisotropy contribution, which presents a weak temperature dependence. The power-law behavior of the multilayers indicates a non-negligible contribution of higher order anisotropies in the uniaxial anisotropy. Bloch-law fittings for the temperature dependence of the magnetization in the spin-wave regime show that the magnetization in the multilayers decreases faster as a function of temperature than the one of bulk Ni. Finally, when the individual Ni-layer thickness decreases below 2 nm, the multilayer stacking vanishes, resulting in a dramatic decrease of the interface magnetic anisotropy and consequently in a decrease of the perpendicular magnetic anisotropy.

  4. Ion irradiation induced defect evolution in Ni and Ni-based FCC equiatomic binary alloys

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jin, Ke; Zhang, Yanwen; Bei, Hongbin

    2016-01-01

    In order to explore the chemical effects on radiation response of alloys with multi-principal elements, defect evolution under Au ion irradiation was investigated in the elemental Ni, equiatomic NiCo and NiFe alloys. Single crystals were successfully grown in an optical floating zone furnace and their (100) surfaces were irradiated with 3 MeV Au ions at fluences ranging from 1 × 1013 to 5 × 1015 ions cm–2 at room temperature. The irradiation-induced defect evolution was analyzed by using ion channeling technique. Experiment shows that NiFe is more irradiation-resistant than NiCo and pure Ni at low fluences. With continuously increasing themore » ion fluences, damage level is eventually saturated for all materials but at different dose levels. The saturation level in pure Ni appears at relatively lower irradiation fluence than the alloys, suggesting that damage accumulation slows down in the alloys. Here, under high-fluence irradiations, pure Ni has wider damage ranges than the alloys, indicating that defects in pure Ni have high mobility.« less

  5. Microsoft Word - NiR.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    In bacteria, NO is produced by nitrite reductase (NiR), a copper-containing enzyme, which ... required to define the mode of binding of the ligands to the active site copper. ...

  6. SF 6432-NI (04-95)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    6432-NI (11-03-2010) SECTION II STANDARD TERMS AND CONDITIONS FOR FIXED PRICE CONTRACTS WITH THE NEWLY INDEPENDENT STATES OF THE FORMER SOVIET UNION INDEX OF CLAUSES. THE FOLLOWING CLAUSES APPLY TO REQUESTS FOR QUOTATION AND CONTRACTS AS INDICATED UNLESS SPECIFICALLY DELETED, OR EXCEPT TO THE EXTENT THEY ARE SPECIFICALLY SUPPLEMENTED OR AMENDED IN WRITING IN THE SIGNATURE PAGE OR SECTION I. NI01 - ACCEPTANCE OF TERMS AND CONDITIONS Contractor, by signing this Agreement, beginning performance,

  7. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  8. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  9. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  10. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect (OSTI)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  11. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  12. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  13. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  14. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  15. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; Worschech, L.; Grutzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  16. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmoreto higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.less

  17. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

    SciTech Connect (OSTI)

    Li, Yi; Liu, Bin E-mail: rzhang@nju.edu.cn; Zhang, Rong E-mail: rzhang@nju.edu.cn; Xie, Zili; Zhuang, Zhe; Dai, JiangPing; Tao, Tao; Zhi, Ting; Zhang, Guogang; Chen, Peng; Ren, Fangfang; Zhao, Hong; Zheng, Youdou

    2015-04-21

    Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620?nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%53% as compared to that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.

  18. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect (OSTI)

    Lekhal, K.; Damilano, B. De Mierry, P.; Venngus, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570600?nm) emitting In{sub x}Ga{sub 1?x}N/Al{sub y}Ga{sub 1?y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1?x}N QWs by the Al{sub y}Ga{sub 1?y}N layers, respectively.

  19. Electronic circuits having NiAl and Ni.sub.3 Al substrates

    DOE Patents [OSTI]

    Deevi, Seetharama C.; Sikka, Vinod K.

    1999-01-01

    An electronic circuit component having improved mechanical properties and thermal conductivity comprises NiAl and/or Ni.sub.3 Al, upon which an alumina layer is formed prior to applying the conductive elements. Additional layers of copper-aluminum alloy or copper further improve mechanical strength and thermal conductivity.

  20. Photosensitivity of the Ni-A state of [NiFe] hydrogenase from Desulfovibrio vulgaris Miyazaki F with visible light

    SciTech Connect (OSTI)

    Osuka, Hisao; Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5, Takayama-cho, Ikoma-shi, Nara 630-0192 ; Shomura, Yasuhito; Komori, Hirofumi; Shibata, Naoki; Nagao, Satoshi; Higuchi, Yoshiki; CREST, JST, Gobancho, Chiyoda-ku, Tokyo 102-0076 ; Hirota, Shun; CREST, JST, Gobancho, Chiyoda-ku, Tokyo 102-0076

    2013-01-04

    Highlights: Black-Right-Pointing-Pointer Ni-A state of [NiFe] hydrogenase showed light sensitivity. Black-Right-Pointing-Pointer New FT-IR bands were observed with light irradiation of the Ni-A state. Black-Right-Pointing-Pointer EPR g-values of the Ni-A state shifted upon light irradiation. Black-Right-Pointing-Pointer The light-induced state converted back to the Ni-A state under the dark condition. -- Abstract: [NiFe] hydrogenase catalyzes reversible oxidation of molecular hydrogen. Its active site is constructed of a hetero dinuclear Ni-Fe complex, and the oxidation state of the Ni ion changes according to the redox state of the enzyme. We found that the Ni-A state (an inactive unready, oxidized state) of [NiFe] hydrogenase from Desulfovibrio vulgaris Miyazaki F (DvMF) is light sensitive and forms a new state (Ni-AL) with irradiation of visible light. The Fourier transform infrared (FT-IR) bands at 1956, 2084 and 2094 cm{sup -1} of the Ni-A state shifted to 1971, 2086 and 2098 cm{sup -1} in the Ni-AL state. The g-values of g{sub x} = 2.30, g{sub y} = 2.23 and g{sub z} = 2.01 for the signals in the electron paramagnetic resonance (EPR) spectrum of the Ni-A state at room temperature varied for -0.009, +0.012 and +0.010, respectively, upon light irradiation. The light-induced Ni-AL state converted back immediately to the Ni-A state under dark condition at room temperature. These results show that the coordination structure of the Fe site of the Ni-A state of [NiFe] hydrogenase is perturbed significantly by light irradiation with relatively small coordination change at the Ni site.

  1. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M.; Giddings, A. D.; Prosa, T. J.; Larson, D. J.; Mano, T.

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  2. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8??10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  3. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgl Okur; Akdemir, Hande Gnay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  4. On-sun concentrator performance of GaInP/GaAs tandem cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Sinha, K.; McMahon, W.E.; Olson, J.M.

    1996-05-01

    The GaInP/GaAs concentrator device has been adapted for and tested in a prototype {open_quotes}real-world{close_quotes} concentrator power system. The device achieved an on-sun efficiency of 28% {+-} 1% in the range of approximately 200-260 suns with device operating temperatures of 38{degrees}C to 42{degrees}C. The authors discuss ways of further improving this performance for future devices.

  5. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  6. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Hajłasz, M.; Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S.; Gravesteijn, D. J.; Rietveld, F. J. R.; Schmitz, J.

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  7. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  8. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  9. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  10. Noncentrosymmetric rare-earth copper gallium chalcogenides RE{sub 3}CuGaCh{sub 7} (RE=La–Nd; Ch=S, Se): An unexpected combination

    SciTech Connect (OSTI)

    Iyer, Abishek K.; Rudyk, Brent W.; Lin, Xinsong; Singh, Harpreet; Sharma, Arzoo Z.; Wiebe, Christopher R.; Mar, Arthur

    2015-09-15

    The quaternary rare-earth chalcogenides RE{sub 3}CuGaS{sub 7} and RE{sub 3}CuGaSe{sub 7} (RE=La–Nd) have been prepared by reactions of the elements at 1050 °C and 900 °C, respectively. They crystallize in the noncentrosymmetric La{sub 3}CuSiS{sub 7}-type structure (hexagonal, space group P6{sub 3}, Z=2) in which the a-parameter is largely controlled by the RE component (a=10.0–10.3 Å for the sulfides and 10.3–10.6 Å for the selenides) whereas the c-parameter is essentially fixed by the choice of Ga and chalcogen atoms within tetrahedral units (c=6.1 Å for the sulfides and 6.4 Å for the selenides). They extend the series RE{sub 3}MGaCh{sub 7}, previously known for divalent metal atoms (M=Mn–Ni), differing in that the Cu atoms in RE{sub 3}CuGaCh{sub 7} occupy trigonal planar sites instead of octahedral sites. Among quaternary chalcogenides RE{sub 3}MM′Ch{sub 7}, the combination of monovalent (M=Cu) and trivalent (M′=Ga) metals is unusual because it appears to violate the condition of charge balance satisfied by most La{sub 3}CuSiS{sub 7}-type compounds. The possibility of divalent Cu atoms was ruled out by bond valence sum analysis, magnetic measurements, and X-ray photoelectron spectroscopy. The electron deficiency in RE{sub 3}CuGaCh{sub 7} is accommodated through S-based holes at the top of the valence band, as shown by band structure calculations on La{sub 3}CuGaS{sub 7}. An optical band gap of about 2.0 eV was found for La{sub 3}CuGaSe{sub 7}. - Graphical abstract: The chalcogenides RE{sub 3}CuGaCh{sub 7} contain monovalent Cu in trigonal planes and trivalent Ga in tetrahedra; they are electron-deficient representatives of La{sub 3}CuSiS{sub 7}-type compounds, which normally satisfy charge balance. - Highlights: • Quaternary chalcogenides RE{sub 3}CuGaCh{sub 7} (RE=La–Nd; Ch=S, Se) were prepared. • Bond valence sums, magnetism, and XPS data give evidence for monovalent Cu. • Crystal structures reveal high anisotropy of Cu displacement.

  11. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  12. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

    SciTech Connect (OSTI)

    Ji, Hai-Ming; Liang, Baolai Simmonds, Paul J.; Juang, Bor-Chau; Yang, Tao; Young, Robert J.; Huffaker, Diana L.

    2015-03-09

    We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

  13. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  14. Rare-earth transition-metal gallium chalcogenides RE{sub 3}MGaCh{sub 7} (M=Fe, Co, Ni; Ch=S, Se)

    SciTech Connect (OSTI)

    Rudyk, Brent W.; Stoyko, Stanislav S.; Oliynyk, Anton O.; Mar, Arthur

    2014-02-15

    Six series of quaternary rare-earth transition-metal chalcogenides RE{sub 3}MGaCh{sub 7} (M=Fe, Co, Ni; Ch=S, Se), comprising 33 compounds in total, have been prepared by reactions of the elements at 1050 °C (for the sulphides) or 900 °C (for the selenides). They adopt noncentrosymmetric hexagonal structures (ordered Ce{sub 3}Al{sub 1.67}S{sub 7}-type, space group P6{sub 3}, Z=2) with cell parameters in the ranges of a=9.5–10.2 Å and c=6.0–6.1 Å for the sulphides and a=10.0–10.5 Å and c=6.3–6.4 Å for the selenides as refined from powder X-ray diffraction data. Single-crystal structures were determined for five members of the sulphide series RE{sub 3}FeGaS{sub 7} (RE=La, Pr, Tb) and RE{sub 3}CoGaS{sub 7} (RE=La, Tb). The highly anisotropic crystal structures consist of one-dimensional chains of M-centred face-sharing octahedra and stacks of Ga-centred tetrahedra all pointing in the same direction. Magnetic measurements on the sulphides reveal paramagnetic behaviour in some cases and long-range antiferromagnetic behaviour with low Néel temperatures (15 K or lower) in others. Ga L-edge XANES spectra support the presence of highly cationic Ga tetrahedral centres with a tendency towards more covalent Ga–Ch character on proceeding from the sulphides to the selenides. Band structure calculations on La{sub 3}FeGaS{sub 7} indicate that the electronic structure is dominated by Fe 3d-based states near the Fermi level. - Graphical abstract: The series of chalcogenides RE{sub 3}MGaS{sub 7}, which form for a wide range of rare-earth and transition metals (M=Fe, Co, Ni), adopt highly anisotropic structures containing chains of M-centred octahedra and stacks of Ga-centred tetrahedra. Display Omitted - Highlights: • Six series (comprising 33 compounds) of chalcogenides RE{sub 3}MGaCh{sub 7} were prepared. • They adopt noncentrosymmetric hexagonal structures with high anisotropy. • Most compounds are paramagnetic; some show antiferromagnetic ordering. • Ga L

  15. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; et al

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersionmore » observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

  16. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper; Reedy, Robert

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  17. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  18. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  19. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  20. Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

    SciTech Connect (OSTI)

    Mohan, Nagaboopathy; Raghavan, Srinivasan; Manikant,; Soman, Rohith

    2015-10-07

    AlGaN/GaN high electron mobility transistor stacks deposited on a single growth platform are used to compare the most common transition, AlN to GaN, schemes used for integrating GaN with Si. The efficiency of these transitions based on linearly graded, step graded, interlayer, and superlattice schemes on dislocation density reduction, stress management, surface roughness, and eventually mobility of the 2D-gas are evaluated. In a 500 nm GaN probe layer deposited, all of these transitions result in total transmission electron microscopy measured dislocations densities of 1 to 3 × 10{sup 9}/cm{sup 2} and <1 nm surface roughness. The 2-D electron gas channels formed at an AlGaN-1 nm AlN/GaN interface deposited on this GaN probe layer all have mobilities of 1600–1900 cm{sup 2}/V s at a carrier concentration of 0.7–0.9 × 10{sup 13}/cm{sup 2}. Compressive stress and changes in composition in GaN rich regions of the AlN-GaN transition are the most effective at reducing dislocation density. Amongst all the transitions studied the step graded transition is the one that helps to implement this feature of GaN integration in the simplest and most consistent manner.

  1. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  2. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  3. Electrical compensation by Ga vacancies in Ga{sub 2}O{sub 3} thin films

    SciTech Connect (OSTI)

    Korhonen, E.; Tuomisto, F.; Gogova, D.; Wagner, G.; Baldini, M.; Galazka, Z.; Schewski, R.; Albrecht, M.

    2015-06-15

    The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga{sub 2}O{sub 3} thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga{sub 2}O{sub 3} thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In{sub 2}O{sub 3}, where recent results show that n-type conductivity is not limited by cation vacancies but by other intrinsic defects such as O{sub i}.

  4. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli; Wang, Jianfeng; Ren, Guoqiang; Xu, Ke

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  5. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  6. Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn

    SciTech Connect (OSTI)

    Plankina, S. M.; Vikhrova, O. V.; Danilov, Yu. A.; Zvonkov, B. N.; Kalentyeva, I. L.; Nezhdanov, A. V.; Chunin, I. I.; Yunin, P. A.

    2015-01-15

    The results of complex studies of InGaAs/GaAs nanoheterostructures δ-doped with Mn are reported. The structures are grown by metal-organic vapor-phase epitaxy in combination with laser deposition. By confocal Raman spectroscopy, it is shown that the low-temperature δ-doped GaAs cap layers are of higher crystal quality compared to uniformly doped layers. Scattering of light in the coupled phonon-plasmon mode is observed. The appearance of this mode is conditioned by the diffusion of manganese from the δ-layer. The thickness of the cap layer is found to be d{sub c} ≈ 9–20 nm, optimal for attainment of the highest photoluminescence intensity of the quantum well and the highest layer concentration of holes by doping with manganese.

  7. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  8. Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

    SciTech Connect (OSTI)

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-09-27

    The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A toward [110] were characterized and discussed by using deep level transient spectroscopy (DLTS) and on the basis of temperature dependence of the junction capacitances (C{sub J}). In one hand, GaAsN films grown on GaAs 311B and GaAs 10A showed n-type and p-type conductivities, respectively although the similar and simultaneous growth conditions. This result is indeed in contrast to the common known effect of N concentration on the type of conductivity, since the surface 311B showed a significant improvement in the incorporation of N. Furthermore, the temperature dependence of C{sub J} has shown that GaAs 311B limits the formation of N-H defects. In the other hand, the energy states in the forbidden gap of GaAsN were obtained. Six electron traps, E1 to E6, were observed in the DLTS spectrum of GaAsN grown on GaAs 311B, with apparent activation energies of 0.02, 0.14, 0.16, 0.33, 0.48, and 0.74 eV below the bottom edge of the conduction band, respectively. In addition, four hole traps, H1 to H4, were observed in the DLTS spectrum of GaAsN grown on GaAs 10A, with energy depths of 0.13, 0.20, 0.39, and 0.52 eV above the valence band maximum of the alloy, respectively. Hence, the surface morphology of the GaAs substrate was found to play a key factor role in clarifying the electrical properties of GaAsN grown by CBE.

  9. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

    SciTech Connect (OSTI)

    Lin, Yong; Leung, Benjamin; Li, Qiming; Figiel, Jeffrey J.; Wang, George T.

    2015-07-14

    In this study, ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.

  10. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lin, Yong; Leung, Benjamin; Li, Qiming; Figiel, Jeffrey J.; Wang, George T.

    2015-07-14

    In this study, ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an ordermore » of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.« less

  11. Magnetic field-induced phase transformation in NiMnCoIn magnetic shape memory alloys - a new actuation mechanism with large work output.

    SciTech Connect (OSTI)

    Karaca, H. E.; Karaman, I.; Basaran, B.; Ren, Y.; Chumlyakov, Y. I.; Maier, H. J.; X-Ray Science Division; Texsas A&M Univ.; Univ. of Kentucky; Siberian Physical-Technical Inst.; Univ. of Paderborn

    2009-04-09

    Magnetic shape memory alloys (MSMAs) have recently been developed into a new class of functional materials that are capable of magnetic-field-induced actuation, mechanical sensing, magnetic refrigeration, and energy harvesting. In the present work, the magnetic field-induced martensitic phase transformation (FIPT) in Ni{sub 45}Mn{sub 36.5}Co{sub 5}In{sub 13.5} MSMA single crystals is characterized as a new actuation mechanism with potential to result in ultra-high actuation work outputs. The effects of the applied magnetic field on the transformation temperatures, magnetization, and superelastic response are investigated. The magnetic work output of NiMnCoIn alloys is determined to be more than 1 MJ m{sup -3} per Tesla, which is one order of magnitude higher than that of the most well-known MSMAs, i.e., NiMnGa alloys. In addition, the work output of NiMnCoIn alloys is orientation independent, potentially surpassing the need for single crystals, and not limited by a saturation magnetic field, as opposed to NiMnGa MSMAs. Experimental and theoretical transformation strains and magnetostress levels are determined as a function of crystal orientation. It is found that [111]-oriented crystals can demonstrate a magnetostress level of 140 MPa T{sup -1} with 1.2% axial strain under compression. These field-induced stress and strain levels are significantly higher than those from existing piezoelectric and magnetostrictive actuators. A thermodynamical framework is introduced to comprehend the magnetic energy contributions during FIPT. The present work reveals that the magnetic FIPT mechanism is promising for magnetic actuation applications and provides new opportunities for applications requiring high actuation work-outputs with relatively large actuation frequencies. One potential issue is the requirement for relatively high critical magnetic fields and field intervals (1.5-3 T) for the onset of FIPT and for reversible FIPT, respectively.

  12. Influence of Ni on Martensitic Phase Transformations in NiTi Shape Memory Alloys

    SciTech Connect (OSTI)

    Frenzel, J.; George, Easo P; Dlouhy, A.; Somsen, Ch.; Wagner, M. F.-X; Eggeler, G.

    2010-01-01

    High-precision data on phase transformation temperatures in NiTi, including numerical expressions for the effect of Ni on M{sub S}, M{sub F}, A{sub S}, A{sub F} and T{sub 0}, are obtained, and the reasons for the large experimental scatter observed in previous studies are discussed. Clear experimental evidence is provided confirming the predictions of Tang et al. 1999 regarding deviations from a linear relation between the thermodynamic equilibrium temperature and Ni concentration. In addition to affecting the phase transition temperatures, increasing Ni contents are found to decrease the width of thermal hysteresis and the heat of transformation. These findings are rationalized on the basis of the crystallographic data of Prokoshkin et al. 2004 and the theory of Ball and James. The results show that it is important to document carefully the details of the arc-melting procedure used to make shape memory alloys and that, if the effects of processing are properly accounted for, precise values for the Ni concentration of the NiTi matrix can be obtained.

  13. Refractive index of erbium doped GaN thin films

    SciTech Connect (OSTI)

    Alajlouni, S.; Sun, Z. Y.; Li, J.; Lin, J. Y.; Jiang, H. X.; Zavada, J. M.

    2014-08-25

    GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540 nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those obtained by conventional growth method of continuous flow of reaction precursors. X-ray diffraction rocking curve linewidths of less than 300 arc sec were achieved for the GaN (0002) diffraction peak, which is comparable to the typical results of undoped high quality GaN epilayers and represents a major improvement over previously reported results for GaN:Er. Spectroscopic ellipsometry was used to determine the refractive index of the GaN:Er epilayers in the 1540 nm wavelength window and a linear dependence on Er concentration was found. The observed refractive index increase with Er incorporation and the improved crystalline quality of the GaN:Er epilayers indicate that low loss GaN:Er optical waveguiding structures are feasible.

  14. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  15. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  16. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Young, M. P.; Woodhead, C. S.; Roberts, J.; Noori, Y. J.; Noble, M. T.; Krier, A.; Hayne, M.; Young, R. J.; Smakman, E. P.; Koenraad, P. M.

    2014-11-15

    We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 ?eV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.

  17. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. ); Koploy, M.A. )

    1992-01-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  18. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J.; Koploy, M.A.

    1992-08-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  19. GaP/Si heterojunction Solar Cells

    SciTech Connect (OSTI)

    Saive, R.; Chen, C.; Emmer, H.; Atwater, H.

    2015-05-11

    Improving the efficiency of solar cells requires the introduction of novel device concepts. Recent developments have shown that in Si solar cell technology there is still room for tremendous improvement. Using the heterojunction with intrinsic thin layer (HIT) approach 25.6 % power conversion efficiency was achieved. However, a-Si as a window and passivation layer comes with disadvantages as a-Si shows low conductivity and high parasitic absorption. Therefore, it is likely that using a crystalline material as window layer with high band gab and high mobility can further improve efficiency. We have studied GaP grown by MOCVD on Si with (001) and (112) orientation. We obtained crystalline layers with carrier mobility around 100 cm2/Vs and which passivate Si as confirmed by carrier lifetime measurements. We performed band alignment studies by X-ray photoelectron spectroscopy yielding a valence band offset of 0.3 eV. Comparing this value with the Schottky-model leads to an interface dipole of 0.59 eV. The open circuit voltage increases with increasing doping and is consistent with the theoretical open circuit voltage deduced from work function difference and interface dipole. We obtain an open circuit voltage of 0.38 V for n-doped GaP with doping levels in the order of 10^17 1/cm^3. In our next steps we will increase the doping level further in order to gain higher open circuit voltage. We will discuss the implications of these findings for GaP/Si heterojunction solar cells.

  20. Distributed bragg reflector using AIGaN/GaN

    DOE Patents [OSTI]

    Waldrip, Karen E.; Lee, Stephen R.; Han, Jung

    2004-08-10

    A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

  1. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  2. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  3. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    SciTech Connect (OSTI)

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  4. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  5. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  6. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  7. Ab initio molecular dynamics investigations of low-energy recoil events in Ni and NiCo

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liu, Bin; Yuan, Fenglin; Jin, Ke; Zhang, Yanwen; Weber, William J.

    2015-10-06

    Low-energy recoil events in pure Ni and the equiatomic NiCo alloy are studied using ab initio molecular dynamics simulations. We found that the threshold displacement energies are strongly dependent on orientation and weakly dependent on composition. The minimum threshold displacement energies are along the [1 1 0] direction in both pure Ni and the NiCo alloy. Compared to pure Ni, the threshold displacement energies increase slightly in the NiCo alloy due to stronger bonds in the alloy, irrespective of the element type of the PKA. A single Ni interstitial occupying the center of a tetrahedron formed by four Ni atomsmore » and a <1 0 0> split interstitial is produced in pure Ni by the recoils, while only the <1 0 0> split interstitial is formed in the NiCo alloy. Compared to the replacement sequences in pure Ni, anti-site defect sequences are observed in the alloy, which have high efficiency for both producing defects and transporting energy outside of the cascade core. These results provide insights into energy transfer processes occurring in equiatomic alloys under irradiation.« less

  8. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19 }m{sup −2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  9. fe0013961-GaTech | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Performer Georgia Tech Research Corporation, Atlanta GA 30332 Background While earlier research focused on the properties of the hydrate mass per se (Sloan Jr and Koh 2007), ...

  10. Photoluminescence from GaAs nanodisks fabricated by using combination...

    Office of Scientific and Technical Information (OSTI)

    GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth Citation Details In-Document Search Title:...

  11. Atomic structure of defects in GaN:Mg grown with Ga polarity

    SciTech Connect (OSTI)

    Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; Jasinski, J.; O'Keefe, M.A.; Hautakangas, S.; Laakso, A.; Saarinen, K.

    2003-11-25

    Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {l_brace}11{und 2}3{r_brace} planes seen in cross-section as triangulars. Some other defects appear in cross-section as trapezoidal (rectangular) defects as a result of presence of truncated pyramids. Both type of defects have hollow centers. They are decorated by Mg on all six side walls and a base. The GaN which grows inside on the defect walls shows polarity inversion. It is shown that change of polarity starts from the defect tip and propagates to the base, and that the stacking sequence changes from ab in the matrix to bc inside the defect. Exchange of the Ga sublattice with the N sublattice within the defect leads to 0.6 {+-} 0.2{angstrom} displacement between Ga sublattices outside and inside the defects. It is proposed that lateral overgrowth of the cavities formed within the defect takes place to restore matrix polarity on the defect base.

  12. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  13. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  14. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  15. Ni{sub 3}Al technology transfer

    SciTech Connect (OSTI)

    Sikka, V.K.; Viswanathan, S.; Santella, M.L.

    1997-04-01

    Ductile Ni{sub 3}Al and Ni{sub 3}Al-based alloys have been identified for a range of applications. These applications require the use of material in a variety of product forms such as sheet, plate, bar, wire, tubing, piping, and castings. Although significant progress has been made in the melting, casting, and near-net-shape forming of nickel aluminides, some issues still remain. These include the need for: (1) high-strength castable composition for many applications that have been identified; (2) castability (mold type, fluidity, hot-shortness, porosity, etc.); (3) weld reparability of castings; and (4) workability of cast or powder metallurgy product to sheet, bar, and wire. The four issues listed above can be {open_quotes}show stoppers{close_quotes} for the commercial application of nickel aluminides. This report describes the work completed to address some of these issues during FY 1996.

  16. SF 6432-NI (02-22-10)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    3-08-10) SECTION II STANDARD TERMS AND CONDITIONS FOR FIXED PRICE CONTRACTS WITH THE NEWLY INDEPENDENT STATES OF THE FORMER SOVIET UNION INDEX OF CLAUSES THE FOLLOWING CLAUSES APPLY TO REQUESTS FOR QUOTATION AND CONTRACTS AS INDICATED UNLESS SPECIFICALLY DELETED, OR EXCEPT TO THE EXTENT THEY ARE SPECIFICALLY SUPPLEMENTED OR AMENDED IN WRITING IN SECTION I. NI01 - ACCEPTANCE OF TERMS AND CONDITIONS Contractor, by signing this Agreement, beginning performance, and/or delivering Items or services

  17. SF 6432-NI (04-95)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    6-08) SECTION II STANDARD TERMS AND CONDITIONS FOR FIXED PRICE CONTRACTS WITH NEW INDEPENDET STATES OF THE FORMER SOVIET UNION INDEX OF CLAUSES THE FOLLOWING CLAUSES APPLY TO REQUESTS FOR QUOTATION AND CONTRACTS AS INDICATED UNLESS SPECIFICALLY DELETED, OR EXCEPT TO THE EXTENT THEY AERE SPECIFICALLY SUPPLEMENTED OR AMENDED IN WRITING IN THE SIGNATURE PAGE OR SECTION I. NI01 - ACCEPTANCE OF TERMS AND CONDITIONS Contractor, by signing this Agreement, beginning performance, and/or delivering Items

  18. Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

    SciTech Connect (OSTI)

    Kasanaboina, Pavan Kumar; Ahmad, Estiak; Li, Jia; Iyer, Shanthi; Reynolds, C. Lewis; Liu, Yang

    2015-09-07

    Bandgap tuning up to 1.3 μm in GaAsSb based nanowires by incorporation of dilute amount of N is reported. Highly vertical GaAs/GaAsSbN/GaAs core-shell configured nanowires were grown for different N contents on Si (111) substrates using plasma assisted molecular beam epitaxy. X-ray diffraction analysis revealed close lattice matching of GaAsSbN with GaAs. Micro-photoluminescence (μ-PL) revealed red shift as well as broadening of the spectra attesting to N incorporation in the nanowires. Replication of the 4K PL spectra for several different single nanowires compared to the corresponding nanowire array suggests good compositional homogeneity amongst the nanowires. A large red shift of the Raman spectrum and associated symmetric line shape in these nanowires have been attributed to phonon localization at point defects. Transmission electron microscopy reveals the dominance of stacking faults and twins in these nanowires. The lower strain present in these dilute nitride nanowires, as opposed to GaAsSb nanowires having the same PL emission wavelength, and the observation of room temperature PL demonstrate the advantage of the dilute nitride system offers in the nanowire configuration, providing a pathway for realizing nanoscale optoelectronic devices in the telecommunication wavelength region.

  19. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  20. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  1. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

    SciTech Connect (OSTI)

    Tsatsulnikov, A. F. Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Kryzhanovskaya, N. V.; Synitsin, M. A.; Sizov, V. S.; Zakgeim, A. L.; Mizerov, M. N.

    2010-06-15

    A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue and yellow-green spectral ranges. The optical properties of structures of this kind have been studied, and it is demonstrated that the use of such a superlattice makes it possible to obtain effective emission from the active region.

  2. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N. E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M. E-mail: Martin.Kuball@bristol.ac.uk; Paskova, T.; Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 ; Evans, K. R.; Leach, J.; Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 ; Li, X.; Özgür, Ü.; Morkoç, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  3. Structure and Magnetic Properties of Ce3(Ni/Al/Ga)11„A New Phase...

    Office of Scientific and Technical Information (OSTI)

    ... The electrical resistivity 7 and magnetic effects 8 of ... showing a homogeneous distribution of all elements over the ... The connection between these strands is realized by the ...

  4. Local structure study of Fe dopants in Ni-deficit Ni3Al alloys

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    V. N. Ivanovski; Umicevic, A.; Belosevic-Cavor, J.; Lei, Hechang; Li, Lijun; Cekic, B.; Koteski, V.; Petrovic, C.

    2015-08-24

    We found that the local electronic and magnetic structure, hyperfine interactions, and phase composition of polycrystalline Ni–deficient Ni 3-x FexAl (x = 0.18 and 0.36) were investigated by means of 57 Fe Mössbauer spectroscopy. The samples were characterized by X–ray diffraction and magnetization measurements. The ab initio calculations performed with the projector augmented wave method and the calculations of the energies of iron point defects were done to elucidate the electronic structure and site preference of Fe doped Ni 3 Al. Moreover, the value of calculated electric field gradient tensor Vzz=1.6 1021Vm-2 matches well with the results of Mössbauer spectroscopymore » and indicates that the Fe atoms occupy Ni sites.« less

  5. NiW and NiRu Bimetallic Catalysts for Ethylene Steam Reforming: Alternative Mechanisms for Sulfur Resistance

    SciTech Connect (OSTI)

    Rangan, M.; Yung, M. M.; Medlin, J. W.

    2012-06-01

    Previous investigations of Ni-based catalysts for the steam reforming of hydrocarbons have indicated that the addition of a second metal can reduce the effects of sulfur poisoning. Two systems that have previously shown promise for such applications, NiW and NiRu, are considered here for the steam reforming of ethylene, a key component of biomass derived tars. Monometallic and bimetallic Al{sub 2}O{sub 3}-supported Ni and W catalysts were employed for ethylene steam reforming in the presence and absence of sulfur. The NiW catalysts were less active than Ni in the absence of sulfur, but were more active in the presence of 50 ppm H{sub 2}S. The mechanism for the W-induced improvements in sulfur resistance appears to be different from that for Ru in NiRu. To probe reasons for the sulfur resistance of NiRu, the adsorption of S and C{sub 2}H{sub 4} on several bimetallic NiRu alloy surfaces ranging from 11 to 33 % Ru was studied using density functional theory (DFT). The DFT studies reveal that sulfur adsorption is generally favored on hollow sites containing Ru. Ethylene preferentially adsorbs atop the Ru atom in all the NiRu (111) alloys investigated. By comparing trends across the various bimetallic models considered, sulfur adsorption was observed to be correlated with the density of occupied states near the Fermi level while C{sub 2}H{sub 4} adsorption was correlated with the number of unoccupied states in the d-band. The diverging mechanisms for S and C{sub 2}H{sub 4} adsorption allow for bimetallic surfaces such as NiRu that enhance ethylene binding without accompanying increases in sulfur binding energy. In contrast, bimetallics such as NiSn and NiW appear to decrease the affinity of the surface for both the reagent and the poison.

  6. Geometric and Electronic Structures of the Ni(I) and Methyl-Ni(III)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Intermediates of Methyl-Coenzyme M Reductase 9 Geometric and Electronic Structures of the Ni(I) and Methyl-Ni(III) Intermediates of Methyl-Coenzyme M Reductase Methyl-coenzyme M reductase (MCR) from methanogenic archaea catalyzes the terminal step in biological methane synthesis. Using coenzyme B (CoBSH) as the two-electron donor, MCR reduces methyl-coenzyme M (methyl-SCoM) to form methane and the heterodisulfide product, CoBS-SCoM. MCR contains an essential redox active nickel tetrapyrrolic

  7. Transmutation-induced embrittlement of V-Ti-Ni and V-Ni alloys in HFIR

    SciTech Connect (OSTI)

    Ohnuki, S.; Takahashi, H.; Garner, F.A.; Pawel, J.E.

    1996-04-01

    Vanadium, V-1Ni, V-10Ti and V-10Ti-1Ni (at %) were irradiated in HFIR to doses ranging from 18 to 30 dpa and temperatures between 300 and 600C. Since the irradiation was conducted in a highly thermalized neutron spectrum without shielding against thermal neutrons, significant levels of chromium (15-22%) were formed by transmutation. The addition of such large chromium levels strongly elevated the ductile to brittle transition temperature. At higher irradiation temperatures radiation-induced segregation of transmutant Cr and solute Ti at specimen surfaces leads to strong increases in the density of the alloy.

  8. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  9. Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.01.2??m due to increased charge carrier's localization

    SciTech Connect (OSTI)

    Kryzhkov, D. I. Yablonsky, A. N.; Morozov, S. V.; Aleshkin, V. Ya.; Krasilnik, Z. F.; Zvonkov, B. N.; Vikhrova, O. V.

    2014-11-28

    In this work, a study of the photoluminescence (PL) temperature dependence in quantum well GaAs/GaAsSb and double quantum well InGaAs/GaAsSb/GaAs heterostructures grown by metalorganic chemical vapor deposition with different parameters of GaAsSb and InGaAs layers has been performed. It has been demonstrated that in double quantum well InGaAs/GaAsSb/GaAs heterostructures, a significant shift of the PL peak to a longer-wavelength region (up to 1.2??m) and a considerable reduction in the PL thermal quenching in comparison with GaAs/GaAsSb structures can be obtained due to better localization of charge carriers in the double quantum well. For InGaAs/GaAsSb/GaAs heterostructures, an additional channel of radiative recombination with participation of the excited energy states in the quantum well, competing with the main ground-state radiative transition, has been revealed.

  10. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  11. Ultrafast dynamics of type-II GaSb/GaAs quantum dots

    SciTech Connect (OSTI)

    Komolibus, K.; Piwonski, T.; Gradkowski, K.; Reyner, C. J.; Liang, B.; Huffaker, D. L.; Huyet, G.; Houlihan, J.

    2015-01-19

    In this paper, room temperature two-colour pump-probe spectroscopy is employed to study ultrafast carrier dynamics in type-II GaSb/GaAs quantum dots. Our results demonstrate a strong dependency of carrier capture/escape processes on applied reverse bias voltage, probing wavelength and number of injected carriers. The extracted timescales as a function of both forward and reverse bias may provide important information for the design of efficient solar cells and quantum dot memories based on this material. The first few picoseconds of the dynamics reveal a complex behaviour with an interesting feature, which does not appear in devices based on type-I materials, and hence is linked to the unique carrier capture/escape processes possible in type-II structures.

  12. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-μm transport was observed within an electron spin lifetime of 1.2 ns at room temperature when using an in-plane electric field of 1.75 kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  13. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali Goswami, Srijit Ghosh, Arindam; Baenninger, Matthias; Farrer, Ian; Ritchie, David A.; Tripathi, Vikram; Pepper, Michael

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  14. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  15. Raman spectroscopy of GaP/GaNP core/shell nanowires

    SciTech Connect (OSTI)

    Dobrovolsky, A.; Chen, W. M.; Buyanova, I. A.; Sukrittanon, S.; Kuang, Y. J.; Tu, C. W.

    2014-11-10

    Raman spectroscopy is employed to characterize structural and phonon properties of GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates. According to polarization-dependent measurements performed on single NWs, the dominant Raman modes associated with zone-center optical phonons obey selection rules in a zinc-blende lattice, confirming high crystalline quality of the NWs. Two additional modes at 360 and 397 cm{sup −1} that are specific to the NW architecture are also detected in resonant Raman spectra and are attributed to defect-activated scattering involving zone-edge transverse optical phonons and surface optical phonons, respectively. It is concluded that the formation of the involved defect states are mainly promoted during the NW growth with a high V/III ratio.

  16. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  17. Microstructures in rapidly solidified Ni-Mo alloys

    SciTech Connect (OSTI)

    Jayaraman, N.; Tewari, S.N.; Hemker, K.J.; Glasgow, T.K.

    1985-01-01

    Ni-Mo alloys of compositions ranging from pure Ni to Ni-40 at % Mo were rapidly solidified by chill block melt spinning in vacuum and were examined by optical metallography, x-ray diffraction and transmission electron microscopy. Rapid solidification resulted in an extension of molybdenum solubility in nickel from 28 to 37.5 at %. A number of different phases and microstructures were seen at different depths (solidification conditions) from the quenched surface of the melt spun ribbons.

  18. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  19. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  20. Thermal Design and Characterization of Heterogeneously Integrated InGaP/GaAs HBTs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Choi, Sukwon; Peake, Gregory M.; Keeler, Gordon A.; Geib, Kent M.; Briggs, Ronald D.; Beechem, Thomas E.; Shaffer, Ryan A.; Clevenger, Jascinda; Patrizi, Gary A.; Klem, John F.; et al

    2016-04-21

    Flip-chip heterogeneously integrated n-p-n InGaP/GaAs heterojunction bipolar transistors (HBTs) with integrated thermal management on wide-bandgap AlN substrates followed by GaAs substrate removal are demonstrated. Without thermal management, substrate removal after integration significantly aggravates self-heating effects, causing poor I–V characteristics due to excessive device self-heating. An electrothermal codesign scheme is demonstrated that involves simulation (design), thermal characterization, fabrication, and evaluation. Thermoreflectance thermal imaging, electrical-temperature sensitive parameter-based thermometry, and infrared thermography were utilized to assess the junction temperature rise in HBTs under diverse configurations. In order to reduce the thermal resistance of integrated devices, passive cooling schemes assisted by structural modification, i.e.,more » positioning indium bump heat sinks between the devices and the carrier, were employed. By implementing thermal heat sinks in close proximity to the active region of flip-chip integrated HBTs, the junction-to-baseplate thermal resistance was reduced over a factor of two, as revealed by junction temperature measurements and improvement of electrical performance. In conclusion, the suggested heterogeneous integration method accounts for not only electrical but also thermal requirements providing insight into realization of advanced and robust III–V/Si heterogeneously integrated electronics.« less

  1. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect (OSTI)

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  2. Competition between Order and Phase Separation in Au-Ni

    SciTech Connect (OSTI)

    Reichert, H.; Schoeps, A.; Ramsteiner, I.B.; Bugaev, V.N.; Shchyglo, O.; Udyansky, A.; Dosch, H.; Asta, M.; Drautz, R.; Honkimaeki, V.

    2005-12-02

    We have measured and theoretically analyzed the diffuse scattering in the binary alloy system Au-Ni, which has been proposed as a testing ground for theories of alloy phase stability. We found strong evidence that in the alloys Au{sub 3}Ni and Au{sub 3}Ni{sub 2}, fluctuations of both ordering- and clustering-type are competing with each other. Our results resolve a long-standing controversy on the balance of relaxation and mixing energies in this alloy system and explain recent findings of ordering in thin Au-Ni films.

  3. Sources of stress gradients in electrodeposited Ni MEMS. (Conference...

    Office of Scientific and Technical Information (OSTI)

    Title: Sources of stress gradients in electrodeposited Ni MEMS. The ability of future integrated metal-semiconductor micro-systems such as RF MEMS to perform highly complex ...

  4. Numerical Simulation of Ni Grain Growth in a Thermal Gradient

    Office of Scientific and Technical Information (OSTI)

    665C Numerical Simulation of Ni Grain Growth in a Thermal Gradient Sandia National Laboratories John A. Mitchell and Veena Tikare Sandia National Laboratories, Albuquerque New ...

  5. Optical properties of multi-stacked InGaAs/GaNAs quantum dot solar cell fabricated on GaAs (311)B substrate

    SciTech Connect (OSTI)

    Shoji, Yasushi; Akimoto, Katsuhiro; Okada, Yoshitaka

    2012-09-15

    Quantum dot solar cells (QDSCs) comprised of 10 stacked pairs of strain-compensated InGaAs/GaNAs QD structure have been fabricated by atomic hydrogen-assisted molecular beam epitaxy. A homogeneous and high-density QD array structure with improved in-plane ordering and total density of {approx}10{sup 12} cm{sup -2} has been achieved on GaAs (311)B grown at 460 Degree-Sign C after stacking. The external quantum efficiency (EQE) of InGaAs/GaNAs QDSC increases in the longer wavelength range due to additive contribution from QD layers inserted in the intrinsic region. The short-circuit current density measured for QDSC is 17.2 mA/cm{sup 2} compared to 14.8 mA/cm{sup 2} of GaAs reference cell. Further, an increase in EQE due to photocurrent production by 2-step photon absorption has been observed at room temperature though it is still small at around 0.1%.

  6. General Atomics (GA) Fusion News: A New Spin on Understanding Plasma

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Confinement | Princeton Plasma Physics Lab General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement American Fusion News Category: General Atomics (GA) Link: General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement

  7. Reactive codoping of GaAlInP compound semiconductors (Patent...

    Office of Scientific and Technical Information (OSTI)

    Patent: Reactive codoping of GaAlInP compound semiconductors Citation Details In-Document Search Title: Reactive codoping of GaAlInP compound semiconductors A GaAlInP compound ...

  8. Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN...

    Office of Scientific and Technical Information (OSTI)

    M.T.T., 60 (6) (2012) 3 Jon Ihlefeld, Sandia National Laboratories Electronic Materials ... Undoped GaN Undoped AlGaN Doped AlGaN 2D Electron Gas Enhancement Mode (nominally ...

  9. Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3??m

    SciTech Connect (OSTI)

    Goldmann, Elias Jahnke, Frank; Paul, Matthias; Kettler, Jan; Jetter, Michael; Michler, Peter; Krause, Florian F.; Mller, Knut; Mehrtens, Thorsten; Rosenauer, Andreas

    2014-10-13

    A combined experimental and theoretical study of InGaAs/GaAs quantum dots (QDs) emitting at 1.3??m under the influence of a strain-reducing InGaAs quantum well is presented. We demonstrate a red shift of 2040?nm observed in photoluminescence spectra due to the quantum well. The InGaAs/GaAs QDs grown by metal organic vapor phase epitaxy show a bimodal height distribution (1?nm and 5?nm) and indium concentrations up to 90%. The emission properties are explained with combined tight-binding and configuration-interaction calculations of the emission wavelengths in conjunction with high-resolution scanning transmission electron microscopy investigations of QD geometry and indium concentrations in the QDs, which directly enter the calculations. QD geometries and concentration gradients representative for the ensemble are identified.

  10. Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography

    SciTech Connect (OSTI)

    Jha, Smita; Liu, C.-C.; Nealey, P. F.; Kuech, T. F.; Kuan, T. S.; Babcock, S. E.; Park, J. H.; Mawst, L. J.

    2009-08-10

    Defect reduction in the large lattice mismatched system of GaSb on GaAs, {approx}7%, was accomplished using full wafer block copolymer (BCP) lithography. A self-assembled BCP mask layer was used to generate a hexagonal pattern of {approx}20 nm holes on {approx}40 nm centers in a 20 nm SiO{sub 2} layer. GaSb growth initially takes place selectively within these holes leading to a dense array of small, strain-relaxed epitaxial GaSb islands. The GaSb grown on the patterned SiO{sub 2} layer exhibits a reduction in the x-ray linewidth attributed to a decrease in the threading dislocation density when compared to blanket pseudomorphic film growth.

  11. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect (OSTI)

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  12. Influence of defects on the structural and magnetic properties of multifunctional La2NiMnO6 thin films

    SciTech Connect (OSTI)

    Guo, HZ; Burgess, J; Ada, E; Street, S; Gupta, A.; Iliev, M N; Kellock, A J; Magen Dominguez, Cesar; Varela del Arco, Maria; Pennycook, Stephen J

    2008-01-01

    Thin films of the double perovskite La2NiMnO6 (LNMO) have been grown on various lattice-matched substrates (SrTiO3, LaAlO3, NdGaO3 and MgO) by pulsed laser deposition under varying oxygen background pressure (25 - 800 mTorr). The out-of-plane lattice constant of the LNMO film initially decreases with increasing pressure, likely caused by a reduction in the defect concentration and improved structural ordering, before leveling off at higher pressures. Scanning transmission electron microscopy results show that the films are epitaxial, and the interface is sharp and coherent. While very few defects are observed by STEM in a film grown at high oxygen pressure (800 mTorr), a film grown at a lower pressure (100 mTorr) shows the formation of defects that extend throughout the thickness except for a very thin layer near the interface. The Raman spectra of the films are dominated by two broad peaks at around 540 cm-1 and 685 cm-1, which are assigned to the antisymmetric stretching (AS) and symmetric stretching (S) modes of MnO6 and NiO6 octahedra, respectively. The Raman peaks of the LNMO thin films grown in 800 mTorr background O2 are blue shifted in comparison to those of LNMO bulk, and the shift increases with decreasing film thickness, indicating the increased influence of strain. The critical thickness for strain relaxation as determined from the Raman spectra is between 40 - 80 nm. The strain is observed to have a negligible influence on the magnetic properties for films grown at high oxygen pressures. However, films grown at low pressures exhibit degraded magnetic properties, which can be attributed to a combination of B-site cation disorder and an increase in the concentration of Mn3+ and Ni3+ Jahn-Teller ions caused by oxygen defects. With increasing oxygen pressure during growth, the paramagnetic-ferromagnetic transition temperature (~280 K) gets sharper and the saturation magnetization at low temperatures is enhanced. Based on electron energy loss spectroscopy

  13. American Flyers N-I Wine Makers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Flyers N-I Wine Makers WSI leads charge in local bike events. NSTec recognizes top performers in NNSS mission. Navarro employees enjoy wine making hobby. See page 8. See page 7. Do You Know Where To Find Latest NNSS Info? In late August, a rainstorm in Las Vegas caused flooding near Mt. Charleston that washed the remnants of this summer's Carpenter Fire across U.S. 95, blocking the roadway. It was 11 p.m. on a Sunday night, and the road closure threatened Nevada National Security Site (NNSS)

  14. Energies of Electronic States of Ni (II) Ion in NiO-Al2O3 Catalyst Prepared by Impregnation

    SciTech Connect (OSTI)

    Obadovic, D. Z.; Kiurski, J.; Marinkovic-Neducin, R. P.

    2007-04-23

    The behavior of NiO-Al2O3 catalysts is strongly dependent on the preparation method, as well as on pretreatment conditions. In the present work we investigated the influences of Ni(II) ion on NiO-Al2O3 catalysts properties due to the preparation by impregnation method. Based on experimental diffuse reflectance spectroscopy (DRS) data of electronic d-d transitions of Ni (II) promoter ion the energies of electronic states in spinel-like structure were calculated, and the most probable scheme of molecular orbital have been proposed.

  15. Enhanced photocatalytic efficiency in zirconia buffered n-NiO/p-NiO single crystalline heterostructures by nanosecond laser treatment

    SciTech Connect (OSTI)

    Molaei, R.; Bayati, M. R.; Alipour, H. M.; Nori, S.; Narayan, J.

    2013-06-21

    We report the formation of NiO based single crystalline p-n junctions with enhanced photocatalytic activity induced by pulsed laser irradiation. The NiO epilayers were grown on Si(001) substrates buffered with cubic yttria-stabilized zirconia (c-YSZ) by using pulsed laser deposition. The NiO/c-YSZ/Si heterostructures were subsequently laser treated by 5 pulses of KrF excimer laser (pulse duration = 25 Multiplication-Sign 10{sup -9} s) at lower energies. Microstructural studies, conducted by X-ray diffraction ({theta}-2{theta} and {phi} techniques) and high resolution transmission electron microscope, showed a cube-on-cube epitaxial relationship at the c-YSZ/Si interface; the epitaxial relationship across the NiO/c-YSZ interface was established as NiO<111 > Double-Vertical-Line Double-Vertical-Line c-YSZ<001> and in-plane NiO<110> Double-Vertical-Line Double-Vertical-Line c-YSZ<100>. Electron microscopy studies showed that the interface between the laser annealed and the pristine region as well as the NiO/c-YSZ interface was atomically sharp and crystallographically continuous. The formation of point defects, namely oxygen vacancies and NiO, due to the coupling of the laser photons with the NiO epilayers was confirmed by XPS. The p-type electrical characteristics of the pristine NiO epilayers turned to an n-type behavior and the electrical conductivity was increased by one order of magnitude after laser treatment. Photocatalytic activity of the pristine (p-NiO/c-YSZ/Si) and the laser-annealed (n-NiO/p-NiO/c-YSZ/Si) heterostructures were assessed by measuring the decomposition rate of 4-chlorophenol under UV light. The photocatalytic reaction rate constants were determined to be 0.0059 and 0.0092 min{sup -1} for the as-deposited and the laser-treated samples, respectively. The enhanced photocatalytic efficiency was attributed to the suppressed charge carrier recombination in the NiO based p-n junctions and higher electrical conductivity. Besides, the oxygen vacancies

  16. Tunability of exchange bias in Ni@NiO core-shell nanoparticles obtained by sequential layer deposition

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    D'Addato, Sergio; Spadaro, Maria Chiara; Luches, Paola; Valeri, Sergio; Grillo, Vincenzo; Rotunno, Enzo; Roldan Gutierrez, Manuel A.; Pennycook, Stephen J.; Ferretti, Anna Maria; Capetti, Elena; et al

    2015-01-01

    Films of magnetic Ni@NiO core–shell nanoparticles (NPs, core diameter d ≅ 12 nm, nominal shell thickness variable between 0 and 6.5 nm) obtained with sequential layer deposition were investigated, to gain insight into the relationships between shell thickness/morphology, core-shell interface, and magnetic properties. Different values of NiO shell thickness ts could be obtained while keeping the Ni core size fixed, at variance with conventional oxidation procedures where the oxide shell is grown at the expense of the core. Chemical composition, morphology of the as-produced samples and structural features of the Ni/NiO interface were investigated with x-ray photoelectron spectroscopy and microscopymore » (scanning electron microscopy, transmission electron microscopy) techniques, and related with results from magnetic measurements obtained with a superconducting quantum interference device. The effect of the shell thickness on the magnetic properties could be studied. The exchange bias (EB) field Hbias is small and almost constant for ts up to 1.6 nm; then it rapidly grows, with no sign of saturation. This behavior is clearly related to the morphology of the top NiO layer, and is mostly due to the thickness dependence of the NiO anisotropy constant. The ability to tune the EB effect by varying the thickness of the last NiO layer represents a step towards the rational design and synthesis of core–shell NPs with desired magnetic properties.« less

  17. Effect of InGaAs interlayer on the properties of GaAs grown on Si (111) substrate by molecular beam epitaxy

    SciTech Connect (OSTI)

    Wen, Lei; Gao, Fangliang; Li, Jingling; Guan, Yunfang; Wang, Wenliang; Zhou, Shizhong; Lin, Zhiting; Zhang, Xiaona; Zhang, Shuguang E-mail: mssgzhang@scut.edu.cn; Li, Guoqiang E-mail: mssgzhang@scut.edu.cn

    2014-11-21

    High-quality GaAs films have been epitaxially grown on Si (111) substrates by inserting an In{sub x}Ga{sub 1−x}As interlayer with proper In composition by molecular beam epitaxy (MBE). The effect of In{sub x}Ga{sub 1−x}As (0 < x < 0.2) interlayers on the properties of GaAs films grown on Si (111) substrates by MBE has been studied in detailed. Due to the high compressive strain between InGaAs and Si, InGaAs undergoes partial strain relaxation. Unstrained InGaAs has a larger lattice constant than GaAs. Therefore, a thin InGaAs layer with proper In composition may adopt a close lattice constant with that of GaAs, which is beneficial to the growth of high-quality GaAs epilayer on top. It is found that the proper In composition in In{sub x}Ga{sub 1−x}As interlayer of 10% is beneficial to obtaining high-quality GaAs films, which, on the one hand, greatly compensates the misfit stress between GaAs film and Si substrate, and on the other hand, suppresses the formation of multiple twin during the heteroepitaxial growth of GaAs film. However, when the In composition does not reach the proper value (∼10%), the In{sub x}Ga{sub 1−x}As adopts a lower strain relaxation and undergoes a lattice constant smaller than unstrained GaAs, and therefore introduces compressive stress to GaAs grown on top. When In composition exceeds the proper value, the In{sub x}Ga{sub 1−x}As will adopt a higher strain relaxation and undergoes a lattice constant larger than unstrained GaAs, and therefore introduces tensile stress to GaAs grown on top. As a result, In{sub x}Ga{sub 1−x}As interlayers with improper In composition introduces enlarged misfit stress to GaAs epilayers grown on top, and deteriorates the quality of GaAs epilayers. This work demonstrates a simple but effective method to grow high-quality GaAs epilayers and brings up a broad prospect for the application of GaAs-based optoelectronic devices on Si substrates.

  18. A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As capacitor structures

    SciTech Connect (OSTI)

    Lin, Jun; Povey, Ian M.; Hurley, Paul K.; Walsh, Lee; Hughes, Greg; Woicik, Joseph C.; O'Regan, Terrance P.

    2014-07-14

    Capacitance-Voltage (C-V) characterization and hard x-ray photoelectron spectroscopy (HAXPES) measurements have been used to study metal/Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As capacitor structures with high (Ni) and low (Al) work function metals. The HAXPES measurements observe a band bending occurring prior to metal deposition, which is attributed to a combination of fixed oxide charges and interface states of donor-type. Following metal deposition, the Fermi level positions at the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface move towards the expected direction as observed from HAXPES measurements. The In{sub 0.53}Ga{sub 0.47}As surface Fermi level positions determined from both the C-V analysis at zero gate bias and HAXPES measurements are in reasonable agreement. The results are consistent with the presence of electrically active interface states at the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface and suggest an interface state density increasing towards the In{sub 0.53}Ga{sub 0.47}As valence band edge.

  19. Measurement of the transmission magnetic circular dichroism of Ga{sub 1?x}Mn{sub x}As epilayers using a built-in p-i-n photodiode

    SciTech Connect (OSTI)

    He, Z. X.; Zheng, H. Z. Wang, H. L.; Zhao, J. H.

    2014-02-28

    By constructing a GaMnAs epilayer/semi-insulating In{sub 0.2}Ga{sub 0.8}As/(001) n{sup +}-GaAs substrate layer structure as a built-in p-i-n photodiode, we developed a scheme for on-chip measurements of transmission magnetic circular dichroism (T-MCD). Both the hysteresis loops in the magnetic field sweeps and the wavelength scans at saturated magnetic fields measured using the new T-MCD scheme, illustrated the same features as those previously measured on the freestanding GaMnAs thin films by conventional T-MCD. Because a large group of epitaxially grown magnetic film/semiconductor heterostructures, such as Fe, NiFe, CoFeAl, and MnGa films on semiconductor substrates, are becoming important new building blocks for semiconductor-based spin field-effect transistor, perpendicular magnetic tunnel junction (p-MTJ) and lateral MTJ devices, the new T-MCD scheme can be applied to tests of their magnetic properties by forming either p-i-n or Schottky photodiodes.

  20. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  1. Characterization of Zns-GaP Naon-composites

    SciTech Connect (OSTI)

    Todd, V.

    1993-12-09

    It proved possible to produce consistent, high-quality nanocrystalline ZnS powders with grain sizes as small as 8 nm. These powders are nano-porous and are readily impregnated with GaP precursor, although inconsistently. Both crystal structure and small grain size of the ZnS can be maintained through the use of GaP. Heat treatment of the impregnated powders results in a ZnS-GaP composite structure where the grain sizes of the phases are on the order of 10--20 nm. Conventional powder processing should be able to produce optically dense ceramic compacts with improved mechanical properties and suitable IR transmission.

  2. Lanthanide Al-Ni base Ericsson cycle magnetic refrigerants

    DOE Patents [OSTI]

    Gschneidner, Jr., Karl A.; Takeya, Hiroyuki

    1995-10-31

    A magnetic refrigerant for a magnetic refrigerator using the Ericsson thermodynamic cycle comprises DyAlNi and (Gd.sub.0.54 Er.sub.0.46)AlNi alloys having a relatively constant .DELTA.Tmc over a wide temperature range.

  3. Lanthanide Al-Ni base Ericsson cycle magnetic refrigerants

    DOE Patents [OSTI]

    Gschneidner, K.A. Jr.; Takeya, Hiroyuki

    1995-10-31

    A magnetic refrigerant for a magnetic refrigerator using the Ericsson thermodynamic cycle comprises DyAlNi and (Gd{sub 0.54}Er{sub 0.46})AlNi alloys having a relatively constant {Delta}Tmc over a wide temperature range. 16 figs.

  4. Synthesis and electrochemical properties of NiO nanospindles

    SciTech Connect (OSTI)

    Zhou, Hai; Lv, Baoliang; Xu, Yao; Wu, Dong

    2014-02-01

    Graphical abstract: NiO nanospindles with a different electrochemical activity as compared to those previous reports were synthesized via an agglomeration–dissolution–recrystallization growth process without the addition of any surfactant. - Highlights: • NiO nanospindles were synthesized without the addition of any surfactant. • The agglomeration–dissolution–recrystallization growth process was used to explain the precursors’ formation process of the spindle-like NiO. • As-obtained spindle-like NiO showed a different electrochemical activity as compared to those previous reports. - Abstract: NiO nanospindles were successfully synthesized via a hydrothermal and post-treatment method. The as-synthesized nanospindles were about several hundred nanometers in width and about one micrometer in length. X-ray diffraction (XRD) analysis revealed that the spindle-like structure was cubic NiO phase crystalline. Scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) analysis indicated that these NiO nanospindles were of single crystal nature. On the basis of time-dependent experiments, a possible agglomeration–dissolution–recrystallization growth process was proposed to explain the formation process of the spindle-like precursors. The cyclic voltammetry (CV) measurement showed that the as-prepared spindle-like NiO exhibited a pseudo-capacitance behavior.

  5. High Voltage GaN Schottky Rectifiers

    SciTech Connect (OSTI)

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  6. Making it pay in Athens, GA

    SciTech Connect (OSTI)

    Malloy, M.G.

    1997-04-01

    The materials recovery facility (MRF) in Athens, GA, is a well-fed recycling facility. But, if the local government has its way, it will be even better fed in the near future. The Athens-Clarke County (ACC) regional municipality in which the facility resides has a put-or-pay contract with the plant`s owner/operator, under which the more it feeds the MRF, the more money it receives in return, through the sale of recycled end products. The ACC Solid Waste Department uses a volume-based waste collection system that encourages residents to recycle--the more they recycle, the less trash they have to put out, and the less they pay each month. The Athens facility, which will be a featured site tour at next month`s WasteExpo `97 in nearby Atlanta, had its ground-breaking two years ago, in April 1995. ACC is responsible for delivering material--or seeing that recyclables are delivered--to the MRF, which is owned and operated by Resource Recovery Systems (RRS, Centerbrook, Conn.). Over the past year, ACC has stepped up various incentives for businesses to recycle and send their recyclables to the facility, including instituting pilot programs for commercial interests that offer them versions of volume-based collection similar to that done by residents.

  7. Outdoor Testing of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied

    SciTech Connect (OSTI)

    McMahon, W. E.; Emergy, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

    2005-08-01

    In this study, we measure the performance of GaInP2/GaAs tandem cells under direct beam sunlight outdoors in order to quantify their sensitivity to both spectral variation and GaInP2 top-cell thickness. A set of cells with five different top-cell thicknesses was mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for either the ASTM G-173 direct (G-173D) spectrum or the "air mass 1.5 global" (AM1.5G) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra with the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

  8. Ni/Pd core/shell nanoparticles supported on graphene as a highly...

    Office of Scientific and Technical Information (OSTI)

    NiPd coreshell nanoparticles supported on graphene as a highly active and reusable ... Citation Details In-Document Search Title: NiPd coreshell nanoparticles supported on ...

  9. SF6432-NI (02-01-12) Fixed Price Former Soviet Union

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Retrieve latest version electronically. SF 6432-NI (020112) SECTION II STANDARD TERMS ... 150,000 Control : SF 6432-NI Title: Standard Terms & Conditions for Fixed Price ...

  10. Isotopic fractionation associated with [NiFe]- and [FeFe]-hydrogenases...

    Office of Scientific and Technical Information (OSTI)

    Isotopic fractionation associated with NiFe- and FeFe-hydrogenases Citation Details In-Document Search Title: Isotopic fractionation associated with NiFe- and ...