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1

Energy absorption in Ni-Mn-Ga/ polymer composites  

E-Print Network (OSTI)

In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

Feuchtwanger, Jorge

2006-01-01T23:59:59.000Z

2

CoNiGa High Temperature Shape Memory Alloys  

E-Print Network (OSTI)

commercially successful SMAs such as NiTi and Cu-based alloys. In recent years, the CoNiGa system has emerged as a new ferromagnetic shape memory alloy with some compositions exhibiting high martensitic transformation temperatures which makes CoNiGa a potential...

Dogan, Ebubekir

2011-10-21T23:59:59.000Z

3

Transverse acoustic actuation of Ni-Mn-Ga single crystals  

E-Print Network (OSTI)

Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

Simon, Jesse Matthew

2007-01-01T23:59:59.000Z

4

Electronic structure of Co-Ni-Ga Heusler alloys studied by resonant photoemission  

SciTech Connect

The electronic structures of Co{sub 2.01}Ni{sub 1.05}Ga{sub 0.94} and Co{sub 1.76}Ni{sub 1.46}Ga{sub 0.78} Heusler alloys have been investigated by resonant photoemission spectroscopy across the 3p-3d transition of Co and Ni. For the Ni excess composition Co{sub 1.76}Ni{sub 1.46}Ga{sub 0.78}, the valence band peak shows a shift of 0.25 eV as compared to the near stoichiometric composition Co{sub 2.01}N1{sub 1.05}Ga{sub 0.94}. Also an enhancement is observed in the Ni related satellite features in the valence band for the Ni excess composition. Due to hybridization of Co and Ni 3d states in these systems, the Co and Ni 3p-3d resonance energies are found to be higher as compared to Co and Ni metals. Theoretical first principle calculation is performed to understand the features in the valence band and the shape of the resonance profile.

Baral, Madhusmita, E-mail: madhusmita@rrcat.gov.in; Banik, Soma, E-mail: madhusmita@rrcat.gov.in; Ganguli, Tapas, E-mail: madhusmita@rrcat.gov.in; Chakrabarti, Aparna, E-mail: madhusmita@rrcat.gov.in; Deb, S. K. [Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Thamizhavel, A. [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005 (India); Wadikar, Avinash; Phase, D. M. [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore-452017 (India)

2014-04-24T23:59:59.000Z

5

Computational Thermodynamics of CoNiGa High Temperature Shape Memory Alloys  

E-Print Network (OSTI)

Shape Memory Alloys (SMAs) are advanced materials with interesting properties such as pseudoelasticity (PE) and the shape memory effect (SME). Recently, the CoNiGa system has emerged as the basis for very promising High Temperature Shape Memory...

Chari, Arpita

2012-10-19T23:59:59.000Z

6

Understanding and development of combined acoustic and magnetic actuation of Ni?MnGa single crystals  

E-Print Network (OSTI)

Ni-Mn-Ga based ferromagnetic shape memory alloys (FSMAs) have emerged as a promising new class of active materials capable of producing a large (several %) magnetic-field-induced strain (MFIS). FSMAs still have several ...

Techapiesancharoenkij, Ratchatee, 1979-

2007-01-01T23:59:59.000Z

7

Frequency Response of Acoustic-Assisted Ni–Mn–Ga Ferromagnetic- Shape-Memory-Alloy Actuator  

E-Print Network (OSTI)

A prototype of Ni–Mn–Ga based ferromagnetic-shape-memory-alloy (FSMA) actuator was designed and built; an acoustic-assist technique was applied to the actuator to enhance its performance. A piezoelectric stack actuator was ...

Techapiesancharoenkij, Ratchatee

8

Modeling and Characterization of the Magnetocaloric Effect in Ni2MnGa Materials  

SciTech Connect

Magnetic shape memory alloys have great promise as magneto-caloric effect refrigerant materials due to their combined magnetic and structural transitions. Computational and experimental research is reported on the Ni2MnGa material system. The magnetic states of this system have been explored using the Wang-Landau statistical approach in conjunction with the Locally Self-consistent Multiple-Scattering (LSMS) method to explore the magnetic states responsible for the magnet-caloric effect in this material. The effects of alloying agents on the transition temperatures of the Ni2MnGa alloy were investigated using differential scanning calorimetry (DSC) and superconducting quantum interference device (SQUID). Neutron scattering experiments were performed to observe the structural and magnetic phase transformations at the Spallation Neutron Source (SNS) at Oak Ridge National Laboratory (ORNL) on alloys of Ni-Mn-Ga and Ni-Mn-Ga-Cu-Fe. Data from the observations are discussed in comparison with the computational studies.

Nicholson, Don M [ORNL; Odbadrakh, Khorgolkhuu [ORNL; Rios, Orlando [ORNL; Hodges, Jason P [ORNL; Ludtka, Gerard Michael [ORNL; Porter, Wallace D [ORNL; Sefat, A. S. [Oak Ridge National Laboratory (ORNL); Rusanu, Aurelian [ORNL; Evans III, Boyd Mccutchen [ORNL

2012-01-01T23:59:59.000Z

9

Magnetic field-induced phase transformation and variant reorientation in Ni2MnGa and NiMnCoIn magnetic shape memory alloys  

E-Print Network (OSTI)

The purpose of this work is to reveal the governing mechanisms responsible for the magnetic field-induced i) martensite reorientation in Ni2MnGa single crystals, ii) stress-assisted phase transformation in Ni2MnGa single crystals and iii) phase...

Karaca, Haluk Ersin

2009-05-15T23:59:59.000Z

10

PMC-EfZa  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

PMC-EfZa PMC-EfZa 0""':' u.s DEPAR TIlIENT OFI!NERGY EERE PROJECT MANACoEMENTCENTER Nl!PA DI!TI!R}.nNATION RECIPJENT:South Dakota State University PROJECT TITLE: Regional Biomass Feedstock Partnership FY11 Page 1 of2 ~ VfjJ STATE: SD Funding Opportunity Announcement Number Pr(l('urement Instrument Number NEPA Control Number CID Number G085041 GFQ-G085041-086 0 Based on my ~view oftbe infor mation concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 451,tA),1 have made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited 10, literature surveys, inventones, audits), data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply and

11

Modeling and Characterization of the Magnetocaloric Effect in Ni2MnGa Materials  

SciTech Connect

Magnetic shape memory alloys have great promise as magneto-caloric effect refrigerant materials due to their combined magnetic and structural transitions. Computational and experimental research is reported on the Ni2MnGa material system. The magnetic states of this system are explored using the Wang-Landau statistical approach in conjunction with the Locally Self-consistent Multiple-Scattering method. The effects of alloying agents on the transition temperatures of the Ni2MnGa alloy are investigated using differential scanning calorimetry and superconducting quantum interference device. Experiments are performed at the Spallation Neutron Source at Oak Ridge National Laboratory to observe the structural and magnetic phase transformations.

Nicholson, Don M [ORNL; Odbadrakh, Khorgolkhuu [ORNL; Shassere, Benjamin [ORNL; Rios, Orlando [ORNL; Hodges, Jason P [ORNL; Ludtka, Gerard Michael [ORNL; Porter, Wallace D [ORNL; Safa-Sefat, Athena [ORNL; Rusanu, Aurelian [ORNL; Brown, Greg [ORNL; Evans III, Boyd Mccutchen [ORNL

2014-01-01T23:59:59.000Z

12

Systematic analysis of the crystal structure, chemical ordering, and microstructure of Ni-Mn-Ga ferromagnetic shape memory alloys  

E-Print Network (OSTI)

Ni-n-Ga based ferromagnetic shape-memory alloys (FSMAs) have shown great promise as an active material that yields a large output strain over a range of actuation frequencies. The maximum strain has been reported to be 6% ...

Richard, Marc Louis

2005-01-01T23:59:59.000Z

13

First principles approach to the magneto caloric effect: Application to Ni2MnGa  

SciTech Connect

The magneto-caloric effect (MCE) is a possible route to more efficient heating and cooling of residential and commercial buildings. The search for improved materials is important to the development of a viable MCE based heat pump technology. We have calculated the magnetic structure of a candidate MCE material: Ni2MnGa. The density of magnetic states was calculated with the Wang Landau statistical method utilizing energies fit to those of the locally self-consistent multiple scattering method. The relationships between the density of magnetic states and the field induced adiabatic temperature change and the isothermal entropy change are discussed. (C) 2011 American Institute of Physics.

Nicholson, Don M [ORNL; Odbadrakh, Khorgolkhuu [ORNL; Rusanu, Aurelian [ORNL; Eisenbach, Markus [ORNL; Brown, Greg [ORNL; Evans III, Boyd Mccutchen [ORNL

2011-01-01T23:59:59.000Z

14

Cooperative effect of monoclinic distortion and sinusoidal modulation in the martensitic structure of Ni{sub 2}FeGa  

SciTech Connect

The structural features of the '5M' martensitic phase in Ni{sub 2}FeGa alloys have been determined by electron diffraction using the multi-slice least-squares (MSLS) method. The results demonstrate that the '5M' phase contains an evident cooperative effect of monoclinic distortion and sinusoidal modulation along the [110]{sub c} direction. Theoretical simulations based on our refined data suggest that the '5M' martensitic phase observed in Ni-Fe-Ga and Ni-Mn-Ga has visible common behaviors in both stacking sequence and local structural distortion. Considering the cooperative effect of monoclinic distortion and sinusoidal modulation, we demonstrate that the '7M' martensitic phase could adopt two equivalent structural phases corresponding with the stacking sequences of (43{sup -}){sub 2} and (52{sup -}){sub 2}, respectively. - Graphical abstract: The structural model of the '5M' Ni{sub 2}FeGa martensite viewed along the [001]{sub c} (i.e. [010]{sub m}) zone axis, demonstrating the cooperative effect of monoclinic distortion and sinusoidal modulation along the [110]{sub c} direction.

Lu, J.B.; Yang, H.X.; Tian, H.F.; Zeng, L.J.; Ma, C.; Feng, L.; Wu, G.H. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Li, J.Q., E-mail: LJQ@aphy.iphy.ac.c [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Jansen, J. [National Center for HREM, Kavli Institute of Nanoscience, Delft University of Technology, 2628 CJ Lorentzweg 1, Delft (Netherlands)

2010-02-15T23:59:59.000Z

15

Precipitation in Fe-or Ni-implanted and annealed GaAs J. C. P. Changa)  

E-Print Network (OSTI)

of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 E. S. Harmon, M. R. Melloch, and J. M. Woodall School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907/semiconductor composites by ion implantation of Fe and Ni into GaAs and a subsequent anneal to nucleate clusters. Electron

Woodall, Jerry M.

16

Magneto-optical spectroscopy of ferromagnetic shape-memory Ni-Mn-Ga alloy  

SciTech Connect

Magneto-optical properties of single crystal of Ni{sub 50.1}Mn{sub 28.4}Ga{sub 21.5} magnetic shape memory alloy in martensite and austenite phase were systematically studied. Crystal orientation was approximately along (100) planes of parent cubic austenite. At room temperature, the sample was in modulated 10M martensite phase and transformed to cubic austenite at 323?K. Spectral dependence of polar magneto-optical Kerr effect was obtained by generalized magneto-optical ellipsometry with rotating analyzer in the photon energy range from 1.2 to 4?eV, and from room temperature to temperature above the Curie point. The Kerr rotation spectra exhibit prominent features typical for complexes containing Mn atoms. Significant spectral changes during transformation to austenite can be explained by different optical properties caused by changes in density of states near the Fermi energy.

Veis, M., E-mail: veis@karlov.mff.cuni.cz; Beran, L.; Zahradnik, M.; Antos, R. [Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 12116 Prague (Czech Republic); Straka, L. [Aalto University School of Engineering, PL14200, FIN-00076 Aalto (Finland); Kopecek, J.; Fekete, L.; Heczko, O. [Institute of Physics, ASCR, Na Slovance 2, 182 21 Prague (Czech Republic)

2014-05-07T23:59:59.000Z

17

Synthesis of the Sterically Related Nickel Gallanediyl Complexes [Ni(CO)3(GaAr?)] (Ar? = C6H3-2,6-(C6H3-2,6-iPr2)2) and [Ni(CO)3(GaL)] (L = HC[C(CH3)N(C6H3-2,6-iPr2)]2): Thermal Decomposition of [Ni(CO)3(GaAr?)] to give the Cluster [Ni4(CO)7(GaAr?)3  

E-Print Network (OSTI)

6 H 3 -2,6-(C 6 H 3 -2,6-iPr 2 ) 2 ) and [Ni(CO) 3 (GaL)] (LC(CH 3 )N(C 6 H 3 -2,6-iPr 2 )] 2 ): Thermal DecompositionC 6 H 3 -2,6-(C 6 H 3 -2,6-iPr 2 ) 2 ) and GaL (L = HC[C(Me)

Serrano, Oracio; Hoppe, Elke; Power, Philip P.

2010-01-01T23:59:59.000Z

18

Skladenjske posebnosti slovenš?ine v razmerjih glagol – vezljivost – stav?ni vzorec  

E-Print Network (OSTI)

združuje osebkovo-povedkovodolo?ilno vlogo (tj. združljivost/kompatibilnost oz. medsebojno odvisnost osebkove in poved- kovodolo?ilne vloge, tako da je osebkova samo formalnostavkotvorna vloga, povedkovodolo?ilna vloga pa je hkrati povedkovniška... pravega konkretnega osebka in zato tudi brez osebila oz. kon?niškega morfema (za izražanje oseb oz. osebka), am- pak ima za izražanje samo oblikovne/formalne dolo?nosti (na samo izrazni ravnini), tj. kon?niško obliko za tretjo osebo ednine, ki v zloženih...

Žele, Andreja

2011-01-01T23:59:59.000Z

19

The ZaP Flow Z-Pinch Project  

SciTech Connect

The results from the ZaP experiment are consistent with the theoretical predictions of sheared flow stabilization. Z pinches with a sheared flow are generated in the ZaP experiment using a coaxial accelerator coupled to an assembly region. The current sheet in the accelerator initially acts as a snowplow. As the Z pinch forms, plasma formation in the accelerator transits to a deflagration process. The plasma exits the accelerator and maintains the flow in the Z pinch. During the quiescent period in the magnetic mode activity at z=0 cm, a stable Z pinch is seen on the axis of the assembly region. The evolution of the axial velocity profile shows a large velocity shear is measured at the edge of the Z pinch during the quiescent period. The velocity shear is above the theoretical threshold. As the velocity shear decreases towards 0.1kV{sub A}, the predicted stability threshold, the quiescent period ends. The present understanding of the ZaP experiment shows that it may be possible for the Z pinch to operate in a steady state if the deflagration process can be maintained by constantly supplying neutral gas or plasma to the accelerator.

Shumlak, U.; Nelson, B. A.

2005-09-01T23:59:59.000Z

20

Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers  

Science Journals Connector (OSTI)

In0.135Ga0.865N/GaN p–i–n solar cells are fabricated and investigated with three types of transparent current spreading layers (TCSLs): Ni/Au layer type (Ni/Au-L), Ni/Au grid type (Ni/Au-G), and ITO layer type (I...

X. M. Cai; Y. Wang; Z. D. Li; X. Q. Lv; J. Y. Zhang; L. Y. Ying…

2013-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

E-Print Network 3.0 - avaryiyi za dopomogoyu Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

for: avaryiyi za dopomogoyu Page: << < 1 2 3 4 5 > >> 1 Identification of the protein folding transition state from molecular dynamics trajectories Summary: - ble S-1 12;Muff...

22

Review of Andreja Markovi?, et al., Slovenska beseda v živo: u?benik za za?etni te?aj slovenš?ine kot drugega/tujega jezika; Andreja Markovi?, et al., S slovenš?ino nimam težav: u?benik za kratke te?aje slovenš?ine: nadaljevalna stopnja; Nataša Pirih Svetina, Andreja Ponikvar. A, B, C . . . 1, 2, 3, gremo . . . U?benik za za?etnike na kratkih te?ajih slovenš?ine kot drugega/tujega jezika  

E-Print Network (OSTI)

REVIEWS 107 Andreja Markovi?, Danuša Škapin, Katarina Rigler Šilc, Špela Kaji? Kmeti?. Slovenska beseda v živo: u?benik za za?etni te?aj slovenš?ine kot drugega/tujega jezika. Third edition. Ljubljana: Center za slovenš?ino kot drugi/tuji jezik pri... Oddelku za slovenistiko Filozofske fakultete, 2002 [3rd edition]. 211 pp., €29.53 [= $38.46] (paper). ISBN: 961-6200-80-1. Andreja Markovi?, Vesna Halužan, Mateja Pezdirc Bartol, Danuša Škapin, Gita Vuga. S slovenš?ino nimam težav: u?benik za kratke te?aje...

Pirnat-Greenberg, Marta

2007-01-01T23:59:59.000Z

23

Shape memory response of ni2mnga and nimncoin magnetic shape memory alloys under compression  

E-Print Network (OSTI)

In this study, the shape memory response of Ni2MnGa and NiMnCoIn magnetic shape memory alloys was observed under compressive stresses. Ni2MnGa is a magnetic shape memory alloy (MSMA) that has been shown to exhibit fully reversible, stressassisted...

Brewer, Andrew Lee

2009-05-15T23:59:59.000Z

24

IEEE TRANSACTIONS ON MAGNETICS, VOL. 38, NO. 4, JULY 2002 1803 New Ni5Al3 Underlayer for Longitudinal  

E-Print Network (OSTI)

IEEE TRANSACTIONS ON MAGNETICS, VOL. 38, NO. 4, JULY 2002 1803 New Ni5Al3 Underlayer--We describe a new Ni5Al3 underlayer for high-den- sity longitudinal magnetic recording. The Ni5Al3 underlayer has the FCC derivative Ga3Pt5 structure. The Ni5Al3 (221) plane has good lattice match with the Co

Laughlin, David E.

25

Author Addresses: J.A. van Biljon, School of Computing, University of South Africa, P O Box 392, UNISA, 0003, South Africa; vbiljja@unisa.ac.za  

E-Print Network (OSTI)

Addresses: J.A. van Biljon, School of Computing, University of South Africa, P O Box 392, UNISA, 0003, South Africa; vbiljja@unisa.ac.za P Kotze, School of Computing, University of South Africa, P O Box 392, UNISA, 0003, South Africa; kotzep@unisa.ac.za K. V. Renaud, Department of Computing Science, The University

Williamson, John

26

AgriculturalPO Box 339, Bloemfontein, 9300 I Tel: 051 401 9111 I E-mail: info@ufs.ac.za I www.ufs.ac.za Natural and  

E-Print Network (OSTI)

www.ufs.ac.za Faculty of Natural and Agricultural Sciences 2013 #12;1 SCIENCES If age brings wisdom Sciences. For a century this faculty has been one of the leaders in science training and research and Agricultural Sciences where our motto "no substitute for excellence" drives our academic endeavors. The Faculty

Buehrer, R. Michael

27

WORLDVIEW THEORY AND THE CONCEPTUALISATION OF SPACE Marc Schfer, Rhodes University, Grahamstown, South Africa, M.Schafer@ru.ac.za  

E-Print Network (OSTI)

, Grahamstown, South Africa, M.Schafer@ru.ac.za Introduction The aim of this paper and presentation is to shareMathematicsin South Africa for example, sees space and shape within a context of social experiences. One and representexperienceswithshape,space,timeand motion, using all available senses" (Republic of South Africa, 1997). This apparent

Spagnolo, Filippo

28

A study on processing, characterization and erosion wear behavior of silicon carbide particle filled ZA-27 metal matrix composites  

Science Journals Connector (OSTI)

Abstract Metal matrix composites are mostly used as such structural engineering components where solid particle erosion is a common mode of failure. In this article, the study is concentrate on the processing and characterization of ZA-27 metal matrix composite (MMC) reinforced with silicon carbide (SiC) particle in different weight percentage ranging from 0–9 wt% in a step of 3% each and also reported on their solid particle erosion wear response. A widely used and simple liquid metallurgy technique called stir casting technique is used for the fabrication of these composite materials. Erosion trials are made as per the experimental design based on Taguchi’s L16 orthogonal array. Predominantly influential parameters affecting the wear rate are identified. The results indicate that erosion wear rate of this composite is influence more by impact velocity and filler content respectively compare to others factors. It also shows the good filler characteristics of SiC particles as wear rate decreases with the increase in filler content in the matrix material.

Srimant Kumar Mishra; Sandhyarani Biswas; Alok Satapathy

2014-01-01T23:59:59.000Z

29

Metal contacts on ZnSe and GaN  

SciTech Connect

Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

Duxstad, K.J. [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering; [Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

1997-05-01T23:59:59.000Z

30

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

NLE Websites -- All DOE Office Websites (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

31

GaN High Power Devices  

SciTech Connect

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

32

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

33

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

34

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name: GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and...

35

Beta decay of Ga-62  

E-Print Network (OSTI)

We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

2003-01-01T23:59:59.000Z

36

Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy  

SciTech Connect

Ti/Al/Ni/Au ohmic contacts were formed on heavily doped n{sup +} metal-polar GaN samples with various Si doping concentrations grown by molecular beam epitaxy. The contact resistivity (R{sub C}) and sheet resistance (R{sub sh}) as a function of corresponding GaN free carrier concentration (n) were measured. Very low R{sub C} values (<0.09 {Omega} mm) were obtained, with a minimum R{sub C} of 0.035 {Omega} mm on a sample with a room temperature carrier concentration of {approx}5 Multiplication-Sign 10{sup 19} cm{sup -3}. Based on the systematic study, the role of R{sub C} and R{sub sh} is discussed in the context of regrown n{sup +} GaN ohmic contacts for GaN based high electron mobility transistors.

Afroz Faria, Faiza; Guo Jia; Zhao Pei; Li Guowang; Kumar Kandaswamy, Prem; Wistey, Mark; Xing Huili; Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)

2012-07-16T23:59:59.000Z

37

Giant Quadrupole-Resonance in Ni Isotopes  

E-Print Network (OSTI)

Inelastic scattering of 129 MeV alpha particles has been used to excite the giant quadrupole resonance in Ni-58, Ni-60, Ni-62, Ni-64. The resonance was found to exhaust 58 +/- 12%, 76 +/- 14%, 78 +/- 14%, and 90 +/-16% of the E2 energy-weighted sum...

Youngblood, David H.; Lui, YW; Garg, U.; Peterson, R. J.

1992-01-01T23:59:59.000Z

38

GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study  

SciTech Connect

The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

2010-10-14T23:59:59.000Z

39

Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes  

SciTech Connect

We report the growth of GaN micro-rods and coaxial quantum-well heterostructures on graphene films, together with structural and optical characterization, for applications in flexible optical devices. Graphene films were grown on Cu foil by means of chemical vapor deposition, and used as the substrates for the growth of the GaN micro-rods, which were subsequently transferred onto SiO{sub 2}/Si substrates. Highly Si-doped, n-type GaN micro-rods were grown on the graphene films using metal–organic chemical vapor deposition. The growth and vertical alignment of the GaN micro-rods, which is a critical factor for the fabrication of high-performance light-emitting diodes (LEDs), were characterized using electron microscopy and X-ray diffraction. The GaN micro-rods exhibited promising photoluminescence characteristics for optoelectronic device applications, including room-temperature stimulated emission. To fabricate flexible LEDs, In{sub x}Ga{sub 1–x}N/GaN multiple quantum wells and a p-type GaN layer were deposited coaxially on the GaN micro-rods, and transferred onto Ag-coated polymer substrates using lift-off. Ti/Au and Ni/Au metal layers were formed to provide electrical contacts to the n-type and p-type GaN regions, respectively. The micro-rod LEDs exhibited intense emission of visible light, even after transfer onto the flexible polymer substrate, and reliable operation was achieved following numerous cycles of mechanical deformation.

Chung, Kunook; Beak, Hyeonjun; Tchoe, Youngbin; Oh, Hongseok; Yi, Gyu-Chul, E-mail: gcyi@snu.ac.kr [Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); Yoo, Hyobin; Kim, Miyoung [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of)

2014-09-01T23:59:59.000Z

40

High doping effects on the in-situ and ex-situ ohmic contacts to n-InGaAs Ashish K. Baraskar1  

E-Print Network (OSTI)

plasma using Ni as etch mask. A four-point probe technique was used to measure resistances usingGaAs surface using i-line optical photolithography and lift-off. Mo and Ti/TiW were then dry etched in SF6/Ar

Rodwell, Mark J. W.

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Bulk Migration of Ni/NiO in Ni-YSZ during Reducing Conditions...  

NLE Websites -- All DOE Office Websites (Extended Search)

random grain orientation. The surface analysis and mapping were carried out using ToF-SIMS and AES whereas EDS maps on FIB sliced areas on Ni-YSZ were utilized for the bulk...

42

RECIPIENT:Gwinnett Co, GA  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

43

Novel GaAs Devices  

Science Journals Connector (OSTI)

As the dimensions of GaAs devices shrink, the effective electron velocity should increase, leading to a shorter transit time and to a ballistic or near-ballistic mode of operation (see Chapter 2). At the same ...

Michael Shur

1987-01-01T23:59:59.000Z

44

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

45

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

46

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

SciTech Connect

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

47

The Obviative Suffix -ni- In Algonquian  

E-Print Network (OSTI)

the marker -ni- is used specifically when an argument has been established as obviative earlier in the discourse. By tracing -ni- in the morphology of Fox and Kickapoo and in Bloomfield's comparative Algonquian work (Bloomfield 1946), the present paper...

Gathercole, Geoffrey

1979-01-01T23:59:59.000Z

48

Monopole Strength in Ni-58  

E-Print Network (OSTI)

PHYSICAL REVIEW C VOLUME 44, NUMBER 5 Monopole strength in Ni NOVEMBER 1991 D. H. Youngblood and Y.-W. Lui Cyclotron Institute, Texas AdkM Uni Uersi ty, College Station, Texas 77843 (Received 20 June 1991) Differential cross-section data from... of Ener- gy under Grant No. DE-FG05-86ER40256. MONOPOLE STRENGTH IN "Ni 1881 [1]D. H. Youngblood, P. Bogucki, J. D. Bronson, U. Garg, Y.-W. Lui, and C. M. Rozsa, Phys. Rev. C 23, 1997 (1981). [2] M. Buenerd, J. Phys. C 4, 115 (1984). [3] S...

Youngblood, David H.; Lui, YW.

1991-01-01T23:59:59.000Z

49

High Efficiency Large Area AlGaAs/GaAs Concentrator Solar Cells  

Science Journals Connector (OSTI)

A 1-kWp ( peak at 100 mw/cm2 incident power dencity ) concentrating photovoltaic array with 180 square Presnel plastic lenses and AlGaAs/GaAs concentrator solar cells has been constructed. The AlGaAs/GaAs concetr...

S. Yoshida; K. Mitsui; T. Oda; Y. Yukimoto…

1981-01-01T23:59:59.000Z

50

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response  

E-Print Network (OSTI)

GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 Received 27 infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

Jalali. Bahram

51

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network (OSTI)

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

52

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network (OSTI)

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

Atwater, Harry

53

GaAs–based quantum cascade lasers  

Science Journals Connector (OSTI)

...N. Murdin GaAs-based quantum cascade lasers Sirtori H. Page C. Becker...state-of-the-art of GaAs-based quantum cascade lasers. These new light sources...2000.0739 GaAs-based quantum cascade lasers By C. Sirtori, H. Page...

2001-01-01T23:59:59.000Z

54

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

55

Kinetics of Ni Sorption in Soils: Roles of Soil Organic Matter and Ni Precipitation  

SciTech Connect

The kinetics of Ni sorption to two Delaware agricultural soils were studied to quantitatively assess the relative importance of Ni adsorption on soil organic matter (SOM) and the formation of Ni layered double hydroxide (Ni-LDH) precipitates using both experimental studies and kinetic modeling. Batch sorption kinetic experiments were conducted with both soils at pH 6.0, 7.0, and 7.5 from 24 h up to 1 month. Time-resolved Ni speciation in soils was determined by X-ray absorption spectroscopy (XAS) during the kinetic experiments. A kinetics model was developed to describe Ni kinetic reactions under various reaction conditions and time scales, which integrated Ni adsorption on SOM with Ni-LDH precipitation in soils. The soil Ni speciation (adsorbed phases and Ni-LDH) calculated using the kinetics model was consistent with that obtained through XAS analysis during the sorption processes. Under our experimental conditions, both modeling and XAS results demonstrated that Ni adsorption on SOM was dominant in the short term and the formation of Ni-LDH precipitates accounted for the long-term Ni sequestration in soils, and, more interestingly, that the adsorbed Ni may slowly transfer to Ni-LDH phases with longer reaction times.

Shi, Zhenqing; Peltier, Edward; Sparks, Donald L. (Delaware); (Kansas)

2012-12-10T23:59:59.000Z

56

Coulomb excitation of 73Ga  

E-Print Network (OSTI)

The B(E2; Ii -> If) values for transitions in 71Ga and 73Ga were deduced from a Coulomb excitation experiment at the safe energy of 2.95 MeV/nucleon using post-accelerated beams of 71,73Ga at the REX-ISOLDE on-line isotope mass separator facility. The emitted gamma rays were detected by the MINIBALL-detector array and B(E2; Ii->If) values were obtained from the yields normalized to the known strength of the 2+ -> 0+ transition in the 120Sn target. The comparison of these new results with the data of less neutron-rich gallium isotopes shows a shift of the E2 collectivity towards lower excitation energy when adding neutrons beyond N = 40. This supports conclusions from previous studies of the gallium isotopes which indicated a structural change in this isotopical chain between N = 40 and N = 42. Combined with recent measurements from collinear laser spectroscopy showing a 1/2- spin and parity for the ground state, the extracted results revealed evidence for a 1/2-; 3/2- doublet near the ground state in 73 31Ga42 differing by at most 0.8 keV in energy.

J. Diriken; I. Stefanescu; D. Balabanski; N. Blasi; A. Blazhev; N. Bree; J. Cederkäll; T. E. Cocolios; T. Davinson; J. Eberth; A. Ekström; D. V. Fedorov; V. N. Fedosseev; L. M. Fraile; S. Franchoo; G. Georgiev; K. Gladnishki; M. Huyse; O. V. Ivanov; V. S. Ivanov; J. Iwanicki; J. Jolie; T. Konstantinopoulos; Th. Kröll; R. Krücken; U. Köster; A. Lagoyannis; G. Lo Bianco; P. Maierbeck; B. A. Marsh; P. Napiorkowski; N. Patronis; D. Pauwels; P. Reiter; M. Seliverstov; G. Sletten; J. Van de Walle; P. Van Duppen; D. Voulot; W. B. Walters; N. Warr; F. Wenander; K. Wrzosek

2010-10-13T23:59:59.000Z

57

Charakterisierung und Präparation von GaN und Herstellung von In-Plane-Gate Transistoren in AlxGa1-xN/GaN Heterostrukturen.  

E-Print Network (OSTI)

??Gegenstand der Arbeit sind GaN-Volumenmaterial und AlxGa1-xN/GaN HEMTs (high electron mobility transistor), welche ein zweidimensionales Elektronengas (2DEG) besitzen. Die Materialien wurden durch elektrische Messungen, insbesondere… (more)

Ebbers, André

2003-01-01T23:59:59.000Z

58

Interfacial characterization of nickel–yttria-stabilized zirconia cermet anode/interconnect joints with Ag–Pd–Ga active filler for use in solid-oxide fuel cells  

Science Journals Connector (OSTI)

Abstract Nickel–yttria-stabilized zirconia cermet anode (Ni–YSZ)/interconnect joints with silver–palladium–gallium (Ag–9Pd–9Ga) active fillers are prepared by vacuum brazing. The joint structure and microstructure are analyzed by X-ray diffraction (XRD) and scanning electron microscopy coupled with energy dispersive spectroscopy (SEM/EDS), and by using an electron probe microanalyzer (EPMA). SEM observations of the joint show no cracks near the interface, confirming the compatibility of the Ag–9Pd–9Ga filler with a different anode and interconnect. The XRD pattern of the joint specimens oxidized at 800 °C for 250 h shows Cr2O3 and (Mn,Cr)3O4 surface layers. EPMA analysis of the cell/Ag–9Pd–9Ga/alloys joint at the cross section shows Cr, O, Fe, Zr, Ni, Ag, Pd, Ga, Y, and Mn. Overall, the results indicate that the bonding between metal and cermet is well established and the interface is smooth. By correlating the XRD and EPMA analysis results, we also analyzed the possible stages during joint oxidation. The joint strength was evaluated at 25 and 800 °C under shear and tensile loading conditions, respectively, and the brazed Ag–9Pd–9Ga sealant compared favorably with the commercially available glass-ceramic GC-9 counterpart.

Chih-Long Chao; Chun-Lin Chu; Yiin-Kuen Fuh; Ray-Quen Hsu; Shyong Lee; Yung-Neng Cheng

2014-01-01T23:59:59.000Z

59

Ni Sorption on Pyrophyllite: Evidence for the Formation of Ni-Al Hydroxide and Its Transformation into Ni-Silicate by Visible,  

E-Print Network (OSTI)

Ni Sorption on Pyrophyllite: Evidence for the Formation of Ni-Al Hydroxide and Its Transformation. Ford, K. S. Scheckel Former EXAFS studies of the sorption of Co and Ni on Al-containing clay minerals

Sparks, Donald L.

60

Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)  

SciTech Connect

Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dang Duc Dung [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi (Viet Nam); Vo Thanh Son [Centers for Nanobioenineering and Spintronics, Chungnam National University, Daejon 350-746 (Korea, Republic of)

2012-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys  

Science Journals Connector (OSTI)

Using large (512-atom) pseudopotential supercell calculations, we have investigated the composition dependence of the momentum matrix element Mv,c for transitions between the valence-band maximum and the conduction-band minimum of three semiconductor alloys:?GaP1-xNx and GaAs1-xNx, exhibiting large chemical and size differences between their alloyed elements, and GaP1-xAsx, which is a weakly perturbed alloy. In the composition ranges where these alloys have a direct band gap, we find that (i) in GaP1-xAsx, Mv,c is large (like the virtual-crystal value) and nearly composition independent; (ii) in GaAs1-xNx, Mv,c is strongly composition dependent: large for small x and small for large x; and (iii) in GaP1-xNx, Mv,c is only slightly composition dependent and is significantly reduced relative to the virtual-crystal value. The different behavior of GaP1-xAsx, GaP1-xNx, and GaAs1-xNx is traced to the existence/absence of impurity levels at the dilute alloy limits: (a) there are no gap-level impurity states at the x?1 or x?0 limits of GaP1-xAsx, (b) an isolated As impurity in GaN (GaN?:As) has a deep band gap impurity level but no deep impurity state is found for N in GaAs, and (c) GaN?:P exhibits a P-localized deep band-gap impurity state and GaP?:N has an N-localized resonant state. The existence of deep levels leads to wave-function localization in real space, thus to a spectral spread in momentum space and to a reduction of Mv,c. These impurity levels are facilitated by atomic relaxations, as evident by the fact that unrelaxed GaN?:As and GaN?:P, show no deep levels, have extended wave functions, and have large interband transition elements.

L. Bellaiche; Su-Huai Wei; Alex Zunger

1997-10-15T23:59:59.000Z

62

Properties of spark-deposited Ni–Cr–NiAl coatings  

Science Journals Connector (OSTI)

The structure and phase composition of sintered Ni–Cr–NiAl alloys and the kinetics of their electrospark deposition onto 45 steel are examined. It is ... shown that the mass transfer coefficient for the deposition

A. V. Paustovskii; R. A. Alfintseva…

2009-07-01T23:59:59.000Z

63

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells  

SciTech Connect

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2007-02-01T23:59:59.000Z

64

Magnetism in Ni-Cu Alloys  

Science Journals Connector (OSTI)

On the assumption that in Ni-Cu alloys the spin moment on a Ni atom depends on the local atomic environment, it was possible to find moment values for the various atomic configurations so as to give average moments in reasonable quantitative agreement with the values measured in the ferromagnetic composition range. The local environment is specified by the number of Ni nearest neighbors and the number of Ni second-nearest neighbors. This model allows also a consistent qualitative interpretation of the effect on the average moment of low-temperature annealing treatment and of plastic deformation.

C. G. Robbins; Helmut Claus; Paul A. Beck

1969-06-16T23:59:59.000Z

65

Kinetics of Ni Sorption in Soils: Roles of Soil Organic Matter and Ni Precipitation  

E-Print Network (OSTI)

Kinetics of Ni Sorption in Soils: Roles of Soil Organic Matter and Ni Precipitation Zhenqing Shi, Lawrence, Kansas 66045-7609, United States *S Supporting Information ABSTRACT: The kinetics of Ni sorption) precipitates using both experimental studies and kinetic modeling. Batch sorption kinetic experiments were

Sparks, Donald L.

66

Princeton Plasma Physics Lab - General Atomics (GA)  

NLE Websites -- All DOE Office Websites (Extended Search)

general-atomics-ga General general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http://www.pppl.gov/node/1132

American Fusion News Category: 
ga">General Atomics (GA)
67

Bond formation at the Ni/ZrO2 interface  

Science Journals Connector (OSTI)

We report on the formation of strong chemical bonds at the Ni(100)/cubic-ZrO2(100) polar interfaces. Ab initio density functional theory calculations demonstrate that both Zr/Ni and O/Ni junctions are energetically stable, and predict that two different interactions determine the interface adhesion. Our results reveal that O-Ni ionic bonds are formed by Ni electron donation, while the Zr-Ni bonds show a mixed character with ionic and electron hybridization contributions.

J. I. Beltrán; S. Gallego; J. Cerdá; J. S. Moya; M. C. Muñoz

2003-08-07T23:59:59.000Z

68

Positron-annihilation measurements of vacancy formation in Ni and Ni(Ge)  

SciTech Connect

Vacancy formation in Ni and in dilute Ni(Ge) alloys was studied under thermal equilibrium conditions using positron-annihilation Doppler broadening. A monovacancy formation enthalpy of 1.8 +- 0.1 eV was determined for pure Ni; combining this result with that from previous tracer self-diffusion measurements, a monovacancy migration enthalpy of 1.1 +- 0.1 eV was also deduced. Analysis of the vacancy formation measurements in Ni(0.3 at.% Ge) and Ni(1 at.% Ge) yielded a value for the vacancy-Ge binding enthalpy of 0.20 +- 0.04 eV.

Smedskjaer, L.C.; Fluss, M.J.; Legnini, D.G.; Chason, M.K.; Siegel, R.W.

1982-03-01T23:59:59.000Z

69

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

SciTech Connect

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

70

Purification and Characterization of [NiFe]-Hydrogenase of Shewanella...  

NLE Websites -- All DOE Office Websites (Extended Search)

Purification and Characterization of NiFe-Hydrogenase of Shewanella oneidensis MR-1. Purification and Characterization of NiFe-Hydrogenase of Shewanella oneidensis MR-1....

71

Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy  

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

72

Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators  

E-Print Network (OSTI)

focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

Demir, Hilmi Volkan

73

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

74

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

75

Martensitic transformation in NiMnGa single crystals: Numerical simulation and experiments  

E-Print Network (OSTI)

is based on a detailed description of the stored energy. Furthermore, the energy dissipation due to phase microstructures in single crystals and the related energy dissipation can be predicted to some extent for SMAs. Let us name, without any ambitions for completeness, the models of Artemev et al. (2000), Falk

Arndt, Marcel

76

E-Print Network 3.0 - alloy ni-mn-ga single Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

of Advanced Materials and Nanotechnology, Peking University Collection: Materials Science ; Biology and Medicine 2 IEEE TRANSACTIONS ON MAGNETICS, VOL. 37, NO. 4, JULY 2001...

77

Electro-Refractive Low Loss MMI-Coupled Ring M.H. Kwakernaak,A.N. Lepore, H. Mohseni, H. An, Z.A. Shellenbarger,J.H. Abeles  

E-Print Network (OSTI)

.C. Connolly,M. King "Low-threshold InGaAsP ring lasers fabricated using bi-level dry etching", IEEE Photon in active discs using electro-absorption[2]. We report the first demonstrationof electro

Rommel, Sean

78

Ni{sub 3}Al aluminide alloys  

SciTech Connect

This paper provides a brief review of the recent progress in research and development of Ni{sub 3}Al and its alloys. Emphasis has been placed on understanding low ductility and brittle fracture of Ni{sub 3}Al alloys at ambient and elevated temperatures. Recent studies have resulted in identifying both intrinsic and extrinsic factors governing the fracture behavior of Ni{sub 3}Al alloys. Parallel efforts on alloy design using physical metallurgy principles have led to properties for structural use. Industrial interest in these alloys is high, and examples of industrial involvement in processing and utilization of these alloys are briefly mentioned.

Liu, C.T.

1993-10-01T23:59:59.000Z

79

Temperature-induced martensite in magnetic shape memory Fe{sub 2}MnGa observed by photoemission electron microscopy  

SciTech Connect

The magnetic domain structure in single crystals of a Heusler shape memory compound near the composition Fe{sub 2}MnGa was observed during phase transition by photoelectron emission microscopy at Beamline 11.0.1.1 of the Advanced Light Source. The behavior is comparable with recent observations of an adaptive martensite phase in prototype Ni{sub 2}MnGa, although the pinning in the recent work is an epitaxial interface and in this work the e#11;ective pinning plane is a boundary between martensitic variants that transform in a self-accommodating way from the single crystal austenite phase present at high temperatures. Temperature dependent observations of the twinning structure give information as to the coupling behavior between the magnetism and the structural evolution.

Jenkins, Catherine; Scholl, Andreas; Kainuma, R.; Elmers, Hans-Joachim; Omori, Toshihiro

2012-01-18T23:59:59.000Z

80

Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface  

E-Print Network (OSTI)

in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

Katsumoto, Shingo

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

82

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells  

SciTech Connect

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2014-04-28T23:59:59.000Z

83

Ohmic contacts to n-GaSb  

E-Print Network (OSTI)

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

84

Electroslag surfacing of steel shafting with Ni alloy 625 and 70Cu-30Ni strip  

SciTech Connect

A comprehensive study of electroslag surfacing (ESS) of steel with Ni Alloy 625 and 70Cu-30Ni strip electrodes was conducted to establish the feasibility of replacing forged bearing sleeves on propulsion shafting with integral weld surfacing. The base material was MIL-S-23284, Class 1 steel in the form of 41--66 cm (16--26 in.) diameter shafting and 76 mm (3 in.) thick flat plate. All ESS was carried out at a heat input level of approximately 5.9kJ/mm (150 kJ/in.) using 30 x 0.5 mm (1.2 x 0.02 in.) strip electrodes. Assessments of mechanical properties and microstructure of Ni Alloy 625 surfacing and 70Cu-30Ni surfacing were conducted to establish the structure-property relationships in these complex alloy systems. In addition, a solidification cracking test was developed to determine the relative cracking susceptibilities of these strip surfacing alloys. Although the Ni Alloy 625 surfacing contained small islands of interdendritic MC type carbides and Laves phase, the mechanical properties of this surfacing were satisfactory. The 70Cu-30Ni surfacing required a buttering layer of 30Cu-70Ni or pure Ni to prevent solidification cracking. The inherent ductility-dip sensitivity of 70Cu-30Ni surfacing was overcome by the development of a suitable ESS procedure.

Devletian, J.H.; Gao, Y.P.; Wood, W.E. [Oregon Graduate Inst. of Science and Technology, Portland, OR (United States)

1996-12-31T23:59:59.000Z

85

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT  

SciTech Connect

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

2014-04-24T23:59:59.000Z

86

Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy  

SciTech Connect

GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-04T23:59:59.000Z

87

New Ni Amidinate Source for ALD/CVD of NiNx, NiO and NiSi , Thiloma Perera1  

E-Print Network (OSTI)

to be particularly important in memory as well as logic applications. Nickel silicide (NiSi) is emerging with a metal-insulator-metal (MIM) structure, offer potential applications for the next generation nonvolatile

88

GA Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name GA-Solar Place Madrid, Spain Zip 28045 Sector Solar Product Madrid based solar project developer, owned by Spanish industrial group Corporacion Gestamp. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

89

Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction  

Science Journals Connector (OSTI)

We report a nondestructive large-area method to characterize dislocation formation at a highly lattice-mismatched interface. The analysis is based on x-ray diffraction and reciprocal space mapping using a standard lab-based diffractometer. We use this technique to identify and analyze a two-dimensional array of 90° misfit dislocations at a GaSb/GaAs interface. The full width at half maximum of the GaSb 004 reciprocal lattice point is shown to decrease with increasing GaSb epilayer thickness as expected from theoretical models. Based on these measurements the variation in the spatial dislocation frequency is calculated to be 1%.

Charles J. Reyner; Jin Wang; Kalyan Nunna; Andrew Lin; Baolai Liang; Mark S. Goorsky; D. L. Huffaker

2011-01-01T23:59:59.000Z

90

GaN–InGaN LED efficiency reduction from parasitic electron currents in p-GaN  

Science Journals Connector (OSTI)

Abstract This paper presents observations of a previously unidentified source of performance limitation for GaN–InGaN LED devices. While most studies focus on output saturation known as ‘current droop’ from InGaN layer effects, we show an alike influence from p-type GaN’s inherent background electron concentration. p-GaN material was investigated to confirm that, even though the material had an excess of holes, the background electrons were indeed present and were influencing the charge flow across device electrodes. This current does not cross LED heterojunctions but rather drifts toward its proximal device electrode, causing a source of heating while providing no carriers for light emitting recombination. The effects of this current were explored in an LED configuration, whose output showed weak efficiency at very low biases in addition to that from current droop. While the shortcoming under small currents has previously been attributed to electron tunneling across the junction, we propose that the background electrons inside p-GaN could be another explanation.

G. Togtema; V. Georgiev; D. Georgieva; R. Gergova; K.S.A. Butcher; D. Alexandrov

2015-01-01T23:59:59.000Z

91

GaTe semiconductor for radiation detection  

DOE Patents (OSTI)

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

92

Photosensitivity of the Ni-A state of [NiFe] hydrogenase from Desulfovibrio vulgaris Miyazaki F with visible light  

SciTech Connect

Highlights: Black-Right-Pointing-Pointer Ni-A state of [NiFe] hydrogenase showed light sensitivity. Black-Right-Pointing-Pointer New FT-IR bands were observed with light irradiation of the Ni-A state. Black-Right-Pointing-Pointer EPR g-values of the Ni-A state shifted upon light irradiation. Black-Right-Pointing-Pointer The light-induced state converted back to the Ni-A state under the dark condition. -- Abstract: [NiFe] hydrogenase catalyzes reversible oxidation of molecular hydrogen. Its active site is constructed of a hetero dinuclear Ni-Fe complex, and the oxidation state of the Ni ion changes according to the redox state of the enzyme. We found that the Ni-A state (an inactive unready, oxidized state) of [NiFe] hydrogenase from Desulfovibrio vulgaris Miyazaki F (DvMF) is light sensitive and forms a new state (Ni-AL) with irradiation of visible light. The Fourier transform infrared (FT-IR) bands at 1956, 2084 and 2094 cm{sup -1} of the Ni-A state shifted to 1971, 2086 and 2098 cm{sup -1} in the Ni-AL state. The g-values of g{sub x} = 2.30, g{sub y} = 2.23 and g{sub z} = 2.01 for the signals in the electron paramagnetic resonance (EPR) spectrum of the Ni-A state at room temperature varied for -0.009, +0.012 and +0.010, respectively, upon light irradiation. The light-induced Ni-AL state converted back immediately to the Ni-A state under dark condition at room temperature. These results show that the coordination structure of the Fe site of the Ni-A state of [NiFe] hydrogenase is perturbed significantly by light irradiation with relatively small coordination change at the Ni site.

Osuka, Hisao [Graduate School of Life Science, University of Hyogo, 3-2-1, Koto, Kamigori-cho, Ako-gun, Hyogo 678-1297 (Japan) [Graduate School of Life Science, University of Hyogo, 3-2-1, Koto, Kamigori-cho, Ako-gun, Hyogo 678-1297 (Japan); Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5, Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan); Shomura, Yasuhito; Komori, Hirofumi; Shibata, Naoki [Graduate School of Life Science, University of Hyogo, 3-2-1, Koto, Kamigori-cho, Ako-gun, Hyogo 678-1297 (Japan)] [Graduate School of Life Science, University of Hyogo, 3-2-1, Koto, Kamigori-cho, Ako-gun, Hyogo 678-1297 (Japan); Nagao, Satoshi [Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5, Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan)] [Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5, Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan); Higuchi, Yoshiki, E-mail: hig@sci.u-hyogo.ac.jp [Graduate School of Life Science, University of Hyogo, 3-2-1, Koto, Kamigori-cho, Ako-gun, Hyogo 678-1297 (Japan) [Graduate School of Life Science, University of Hyogo, 3-2-1, Koto, Kamigori-cho, Ako-gun, Hyogo 678-1297 (Japan); CREST, JST, Gobancho, Chiyoda-ku, Tokyo 102-0076 (Japan); Hirota, Shun, E-mail: hirota@ms.naist.jp [Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5, Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan) [Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5, Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan); CREST, JST, Gobancho, Chiyoda-ku, Tokyo 102-0076 (Japan)

2013-01-04T23:59:59.000Z

93

Size effects in Ni/Ni(OH)2 nanomaterials for electrochemical capacitors.  

SciTech Connect

Electrochemical capacitors based on redox-active metal oxides show great promise for many energy-storage applications. These materials store charge through both electric double-layer charging and faradaic reactions in the oxide. The dimensions of the oxide nanomaterials have a strong influence on the performance of such capacitors. Not just due to surface area effects, which influence the double-layer capacitance, but also through bulk electrical and ionic conductivities. Ni(OH)2 is a prime candidate for such applications, due to low cost and high theoretical capacity. We have examined the relationship between diameter and capacity for Ni/Ni(OH)2 nanorods. Specific capacitances of up to 511 F/g of Ni were recorded in 47 nm diameter Ni(OH)2 nanorods.

Bunker, Bruce Conrad; Limmer, Steven J.; Yelton, William Graham

2010-04-01T23:59:59.000Z

94

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a  

E-Print Network (OSTI)

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a Anna Fontcuberta i Morral,b and Harry, Pasadena, California 91125 Daniel J. Aiken Emcore Photovoltaics, Albuquerque, New Mexico 87123 Mark W. Wanlass National Renewable Energy Laboratory, Golden, Colorado 80401 Received 19 March 2006; accepted 26

Atwater, Harry

95

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

96

Study and development of tunable, single mode AlGaAs/GaAs lasers  

SciTech Connect

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

1990-09-01T23:59:59.000Z

97

Defect studies in low-temperature-grown GaAs  

SciTech Connect

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

98

Defect studies in low-temperature-grown GaAs  

SciTech Connect

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

99

Structure Analysis of a Precipitate Phase in an Ni-Rich High...  

NLE Websites -- All DOE Office Websites (Extended Search)

Analysis of a Precipitate Phase in an Ni-Rich High Temperature NiTiHf Shape Memory Alloy. Structure Analysis of a Precipitate Phase in an Ni-Rich High Temperature NiTiHf Shape...

100

Airtricity Developments NI Ltd | Open Energy Information  

Open Energy Info (EERE)

NI Ltd NI Ltd Jump to: navigation, search Name Airtricity Developments NI Ltd Place Belfast, Northern Ireland, United Kingdom Zip BT2 7AF Sector Wind energy Product Focused on construction of wind farms in Northern Ireland. Coordinates 54.595295°, -5.934524° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":54.595295,"lon":-5.934524,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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101

Magnetic quantum diesel engine in Ni2  

Science Journals Connector (OSTI)

Quantum Diesel cycles are numerically realized using the electronic states of a Ni2 dimer. The quantum nature and the complexity of the electronic structure of the Ni2 dimer result in new features in the evolution of the pressure as well as in the heat-work transformation. The multitude of internal degrees of freedom in the isobaric process in molecules can result in crossing of the two adiabatic processes in the P-V diagram. The interplay of heat and work, originating from thermal nonequilibrium effects, can lead to a thermal efficiency of up to 100%. The spin moment of the Ni2 can be decreased by the isobaric process. To link the molecular heat capacity to easily accessible experimental quantities, we also calculate the Kerr effect and the magnetic susceptibility at different temperatures and magnetic fields.

C. D. Dong; G. Lefkidis; W. Hübner

2013-12-20T23:59:59.000Z

102

Carbon Nanotube Growth Using Ni Catalyst in Different Layouts  

E-Print Network (OSTI)

Vertically aligned carbon nanotubes have been grown using Ni as catalyst by plasma enhanced chemical vapor deposition system (PECVD) in various pre-patterned substrates. Ni was thermally evaporated on silicon substrates ...

Nguyen, H. Q.

103

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

104

Good and bad features of Ni-Cd cell designs  

SciTech Connect

Processes for spacecraft Ni-Cd cells are reviewed. Mechanical impregnation is compared against chemical and thermochemical impregnation.

Gross, S.

1996-02-01T23:59:59.000Z

105

GA-AL-SC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

106

Low Efficiency Droop Green Nano-Pyramid {10 -11} InGaN/GaN Multiple Quantum Well LED  

Science Journals Connector (OSTI)

We report a low efficiency droop 520 nm green nano-pyramid InGaN/GaN multiple quantum well (MQW) LED. MQWs were grown on the semipolar {10 1} nano-pyramid facets. The device physics...

Cheng, Yuh-Jen; Chang, Shih-Pang; Lin, Da-Wei; Kuo, Hao-chung; Xiong, Kang-lin

107

InGaN working electrodes with assisted bias generated from GaAs solar cells for efficient water splitting  

Science Journals Connector (OSTI)

Hydrogen generation through water splitting by n-InGaN working electrodes with bias generated from GaAs solar cell was studied. Instead of using an external bias provided by power...

Liu, Shu-Yen; Sheu, J K; Lin, Yu-Chuan; Chen, Yu-Tong; Tu, S J; Lee, M L; Lai, W C

2013-01-01T23:59:59.000Z

108

Reaktive Molekularstrahlepitaxie und Charakterisierung von GaN/(Al,Ga)N-Heterostrukturen auf SiC(0001).  

E-Print Network (OSTI)

??Thema dieser Arbeit ist die Synthese von hexagonalen GaN/(Al,Ga)N-Heterostrukturen mittels reaktiver Molekularstrahlepitaxie (MBE) auf SiC(0001)-Substraten. Der Einfluß der Wachstumsbedingungen auf die strukturellen, morphologischen, optischen und… (more)

Thamm, Andreas

2001-01-01T23:59:59.000Z

109

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

110

Dampfdruckmessungen und Protonenresonanzuntersuchung an Hydriden der intermetallischen Phasen Ti2(Ni, Co) und Ti2(Ni, Fe)  

Science Journals Connector (OSTI)

NMR and hydrogen equilibrium pressure measurements were performed on hydrides of the intermetallic compounds Ti2(Ni, Co) and Ti2(Ni, Fe). The following values of enthalpy ?H and entropy ?S for the formation of th...

Engelbert Tuscher; Kurt Hiebl; Helmut Bittner

1981-02-01T23:59:59.000Z

111

High Temperature coatings based on {beta}-NiAI  

SciTech Connect

High temperature alloys are reviewed, focusing on current superalloys and their coatings. The synthesis, characerization, and oxidation performance of a NiAl–TiB{sub 2} composite are explained. A novel coating process for Mo–Ni–Al alloys for improved oxidation performance is examined. The cyclic oxidation performance of coated and uncoated Mo–Ni–Al alloys is discussed.

Severs, Kevin

2012-07-10T23:59:59.000Z

112

Grain boundary compositon in NiAl  

SciTech Connect

The high temperature strength and oxidation resistance of many transition metal aluminides makes these intermetallic materials attractive for high temperature applications. However, these aluminides are generally brittle at low temperatures and this restricts their technological applications. However, these aluminides are generally brittle at low temperatures and this restricts their technological applications. It has been demonstrated that the addition of more than 200 ppm of boron to the L1{sub 2}-ordered Ni{sub 3}Al changes the fracture behavior from intergranular to transgranular and increases the ductility. The B2-ordered NiAl nickel aluminide is particularly attractive because of its low density and high melting temperature. This aluminide also fractures intergranularly at room temperature. However, no improvement in ductility is observed with similar boron additions even though the intergranular fracture is suppressed and there is a significant increase in the yield strength. In this paper, the results of an atom probe field ion microscopy investigation of the compositions of the grain boundaries in undoped and boron-doped NiAl are presented. The suitability of the atom probe field ion microscopy technique for the characterization of boundaries has clearly been demonstrated in many previous investigations including the characterization of boron segregation to grain boundaries and other planar features in Ni{sub 3}Al.

Miller, M.K.; Jayaram, R.; Camus, P.P. (Metals and Ceramics Div., Oak Ridge National Lab., Oak Ridge, TN (US))

1992-02-15T23:59:59.000Z

113

Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding  

SciTech Connect

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

2006-01-01T23:59:59.000Z

114

Geometric structures of thin film: Pt on Pd(110) and NiO on Ni(100)  

SciTech Connect

This thesis is divided into 3 papers: dynamical low-energy electron- diffraction investigation of lateral displacements in topmost layer of Pd(110); determination of (1{times}1) and (1{times}2) structures of Pt thin films on Pd(110) by dynamical low-energy electron-diffraction analysis; and structural determination of a NiO(111) film on Ni(100) by dynamical low-energy electron-diffraction analysis.

Warren, O.L.

1993-07-01T23:59:59.000Z

115

Growth and characterization of M-plane GaN and (In,Ga)N/GaN multiple quantum wells.  

E-Print Network (OSTI)

??Thema dieser Arbeit ist die Synthese von Wurtzit M-plane (In,Ga)N(1-100)-Heterostrukturen auf g-LiAlO2(100) mittels plasmaunterstützter Molekularstrahlepitaxie (MBE). Der Einfluß der Wachstumsbedingungen auf die strukturellen, morphologischen, und… (more)

Sun, Yue-Jun

2004-01-01T23:59:59.000Z

116

Development of Polarized Electron Source of GaAs-AlGaAs Superlattice and Strained GaAs  

Science Journals Connector (OSTI)

At Nagoya University, we have continued the development of GaAs polarized electron source (PES) for several years. Our test ... a gun producing (1–5) KeV polarized electrons and a standard 100 KeV Mott polarimete...

T. Nakanishi; S. Nakamura

1991-01-01T23:59:59.000Z

117

Auger recombination suppression and band alignment in GaAsBi/GaAs heterostructures  

SciTech Connect

Using a combination of experimental and theoretical techniques we present the dependence of the bandgap E{sub g} and the spin orbit splitting energy ?{sub so}, with Bi concentration in GaAsBi/GaAs samples. We find that the concentration at which ?{sub so},> E{sub g} occurs at 9%. Both spectroscopic as well as first device results indicate a type I alignment.

Hild, K.; Batool, Z.; Jin, S. R.; Hossain, N.; Marko, I. P.; Sweeney, S. J. [Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH (United Kingdom); Hosea, T. JC. [1 Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, GU2 7XH, UK and also, Ibnu Sina Institute, Universiti Teknologi Malaysia, Johor Bahru, 81310 (Malaysia); Lu, X. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6, Canada and now VarianSemiconductor Equipment Associates, Gloucester, MA 01930 (United States); Tiedje, T. [Department of Electrical and Computer Engineering, University of Victoria, Victoria BC, V8W 3P6 (Canada)

2013-12-04T23:59:59.000Z

118

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

119

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

120

Ni-Pt Silicide Formation Through Ti Mediating Layers  

SciTech Connect

With Ni1-xPtxSi, the variation in queue time between the final surface cleaning and Ni-Pt deposition represents a significant manufacturability issue. A short queue time is often difficult to maintain, leading to the formation of an oxide layer on the Si substrate prior to Ni-Pt deposition that can affect the formation of Ni1-xPtxSi and its texture. In this manuscript, it will be shown that an extended queue time prior to Ni-Pt deposition leads to morphological changes in the Ni1-xPtxSi formation sequence. A layer of Ti deposited between Ni-Pt and Si reduces the native oxide and may facilitate Ni1-xPtxSi formation. With increasing Ti thickness, the presence of metal-rich phases is gradually reduced and the formation temperature of Ni1-xPtxSi increases, suggesting a direct formation of Ni1-xPtxSi from Ni-Pt. In the presence of an interfacial oxide, an increase in formation temperature is also observed with increasing Ti interlayer thickness. When the Ti layer is sufficiently thick, the phase formation sequence becomes relatively insensitive to the presence of an interfacial oxide or extended queue time.

Besser,P.; Lavoie, C.; Ozcan, A.; Murray, C.; Strane, J.; Wong, K.; Gribelyuk, M.; Wang, Y.; Parks, C.; Jordan-Sweet, J.

2007-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Multiband GaNAsP Quaternary Alloys  

SciTech Connect

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

2005-12-08T23:59:59.000Z

122

Implantation of carbon in GaAs  

SciTech Connect

Carbon implanted into GaAs and thermally annealed typically exhibits very low (<3%) electrical activity. It has been demonstrated that the electrical activity of C can be significantly enhanced by co-implantation with Ga. Improved activation may result from either additional damage of the crystal lattice or from stoichiometric changes, forcing the C atoms onto As sites. To determine the relative importance of each of these effects, I have undertaken a systematic study of carbon activation in GaAs. A range of co-implants have been used: group III (B, Ga), group V (N, P, As) and noble gases (Ar, Kr). The damage introduced to the substrate will depend on the mass of the ion implanted. The group III and group V co-implants will affect the crystal stoichiometry. The results indicate that both lattice damage and crystal stoichiometry are important for high electrical activity of C. Increasing the damage will increase the activation due to the increased number of As vacancies but maximum activation can be obtained only by a co-implant which not only damages the lattice but also forces the C to occupy an As site.

Moll, A.J.

1992-03-01T23:59:59.000Z

123

O?[]O? nuclear ?-decay of ?²Ga  

E-Print Network (OSTI)

The branching ratio for the ?-Decay of ?²Ga to the first excited O? state in ?²Zn has been measured. It is possible to use this branching ratio to test the theoretical method of calculating the [] component of the charge correction term [], which...

Hyman, Bruce Carl

2012-06-07T23:59:59.000Z

124

Comparison of Three Ni-Hard I Alloys  

Office of Scientific and Technical Information (OSTI)

Comparison of Three Ni-Hard I Alloys Comparison of Three Ni-Hard I Alloys Ö. N. Do-an 1 , J.A. Hawk 1 , and J.Rice 2 1 U.S. Department of Energy, Albany Research Center, Albany, Oregon 2 Texaloy Foundry Co., Inc., Floresville, Texas Keywords: Ni-Hard white irons, Bainite, Martensite, Austenite, Abrasion resistant iron Abstract This report documents the results of an investigation which was undertaken to reveal the similarities and differences in the mechanical properties and microstructural characteristics of three Ni-Hard I alloys. One alloy (B1) is ASTM A532 class IA Ni-Hard containing 4.2 wt. pct. Ni. The second alloy (B2) is similar to B1 but higher in Cr, Si, and Mo. The third alloy (T1) also falls in the same ASTM specification, but it contains 3.3 wt. pct. Ni. The alloys were evaluated in both as-cast and

125

Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction  

SciTech Connect

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16° from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

2014-03-17T23:59:59.000Z

126

Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells  

SciTech Connect

AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arès, R. [Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, Québec (Canada)] [Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, Sherbrooke, Québec (Canada); Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K. [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada)] [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Fafard, S. [Cyrium Technologies Inc., Ottawa, ON (Canada)] [Cyrium Technologies Inc., Ottawa, ON (Canada)

2013-09-27T23:59:59.000Z

127

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors  

SciTech Connect

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

Yang, Jie, E-mail: jie.yang@yale.edu; Cui, Sharon; Ma, T. P. [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)] [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States); Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)] [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

2013-11-25T23:59:59.000Z

128

Operational Inhomogeneities in La0.9Sr0.1Ga0.8Mg0.2O3d Electrolytes  

E-Print Network (OSTI)

­ Ce0.9Gd0.1O2­d Composite Anodes for Solid Oxide Fuel Cells Y. Liao1 *, D. M. Bierschenk1 , S. A Introduction Ni cermet anodes are commonly used in solid oxide fuel cells (SOFCs) [1­4], but there has been.liao@globalsino.com Abstract The electrolyte/anode interface in solid oxide fuel cells with La0.9Sr0.1Ga0.8Mg0.2O3­d

Marks, Laurence D.

129

SF 6432-NI (04-95)  

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6/14/11 6/14/11 Page 1 of 14 Printed copies of this document are uncontrolled. Retrieve latest version electronically. SF 6432-NI (06/14/11) SECTION II STANDARD TERMS AND CONDITIONS FOR FIXED PRICE CONTRACTS WITH THE NEWLY INDEPENDENT STATES OF THE FORMER SOVIET UNION INDEX OF CLAUSES. THE FOLLOWING CLAUSES APPLY TO REQUESTS FOR QUOTATION AND CONTRACTS AS INDICATED UNLESS SPECIFICALLY DELETED, OR EXCEPT TO THE EXTENT THEY ARE SPECIFICALLY SUPPLEMENTED OR AMENDED IN WRITING IN THE SIGNATURE PAGE OR SECTION I. NI01 - ACCEPTANCE OF TERMS AND CONDITIONS Contractor, by signing this Agreement, beginning performance, and/or delivering Items or services ordered under this Agreement, agrees to comply with all the terms and conditions and all specifications and other documents that this Contract incorporated by

130

Microsoft Word - NiR.doc  

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Side-on Cu-Nitrosyl Coordination by Nitrite Reductase Side-on Cu-Nitrosyl Coordination by Nitrite Reductase Elitza I. Tocheva and Michael E. P. Murphy Department of Microbiology & Immunology, The University of British Columbia, Vancouver, BC, Canada V6T 1Z3. Nitric oxide (NO) is one of the smallest and simplest biologically active molecules. In mammals, NO is produced from arginine by isoforms of nitric oxide synthase, and it func- tions in signal transduction and as a cytoprotective or cytotoxic agent. In bacteria, NO is produced by nitrite reductase (NiR), a copper-containing enzyme, which is responsible for the reduction of nitrite to nitric oxide (NO) in the process of dissimilatory denitrification. Cu- containing NiRs are homotrimers with two distinct Cu sites per monomeric unit (1). The type

131

Infrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a  

E-Print Network (OSTI)

GaP single QW surrounded by AlGaInP waveguide WG and cladding layers, whereas the NIR laser incorporates a GaInfrared emission from the substrate of GaAs-based semiconductor lasers Mathias Ziegler,1,a Robert in GaAs-based broad-area laser diodes. Spectrally and spatially resolved scanning optical microscopy

Peinke, Joachim

132

Measurement of the transmission magnetic circular dichroism of Ga{sub 1?x}Mn{sub x}As epilayers using a built-in p-i-n photodiode  

SciTech Connect

By constructing a GaMnAs epilayer/semi-insulating In{sub 0.2}Ga{sub 0.8}As/(001) n{sup +}-GaAs substrate layer structure as a built-in p-i-n photodiode, we developed a scheme for on-chip measurements of transmission magnetic circular dichroism (T-MCD). Both the hysteresis loops in the magnetic field sweeps and the wavelength scans at saturated magnetic fields measured using the new T-MCD scheme, illustrated the same features as those previously measured on the freestanding GaMnAs thin films by conventional T-MCD. Because a large group of epitaxially grown magnetic film/semiconductor heterostructures, such as Fe, NiFe, CoFeAl, and MnGa films on semiconductor substrates, are becoming important new building blocks for semiconductor-based spin field-effect transistor, perpendicular magnetic tunnel junction (p-MTJ) and lateral MTJ devices, the new T-MCD scheme can be applied to tests of their magnetic properties by forming either p-i-n or Schottky photodiodes.

He, Z. X.; Zheng, H. Z., E-mail: hzzheng@red.semi.ac.cn; Wang, H. L.; Zhao, J. H. [State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083 (China)

2014-02-28T23:59:59.000Z

133

NiW and NiRu Bimetallic Catalysts for Ethylene Steam Reforming: Alternative Mechanisms for Sulfur Resistance  

SciTech Connect

Previous investigations of Ni-based catalysts for the steam reforming of hydrocarbons have indicated that the addition of a second metal can reduce the effects of sulfur poisoning. Two systems that have previously shown promise for such applications, NiW and NiRu, are considered here for the steam reforming of ethylene, a key component of biomass derived tars. Monometallic and bimetallic Al{sub 2}O{sub 3}-supported Ni and W catalysts were employed for ethylene steam reforming in the presence and absence of sulfur. The NiW catalysts were less active than Ni in the absence of sulfur, but were more active in the presence of 50 ppm H{sub 2}S. The mechanism for the W-induced improvements in sulfur resistance appears to be different from that for Ru in NiRu. To probe reasons for the sulfur resistance of NiRu, the adsorption of S and C{sub 2}H{sub 4} on several bimetallic NiRu alloy surfaces ranging from 11 to 33 % Ru was studied using density functional theory (DFT). The DFT studies reveal that sulfur adsorption is generally favored on hollow sites containing Ru. Ethylene preferentially adsorbs atop the Ru atom in all the NiRu (111) alloys investigated. By comparing trends across the various bimetallic models considered, sulfur adsorption was observed to be correlated with the density of occupied states near the Fermi level while C{sub 2}H{sub 4} adsorption was correlated with the number of unoccupied states in the d-band. The diverging mechanisms for S and C{sub 2}H{sub 4} adsorption allow for bimetallic surfaces such as NiRu that enhance ethylene binding without accompanying increases in sulfur binding energy. In contrast, bimetallics such as NiSn and NiW appear to decrease the affinity of the surface for both the reagent and the poison.

Rangan, M.; Yung, M. M.; Medlin, J. W.

2012-06-01T23:59:59.000Z

134

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell  

SciTech Connect

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-01-01T23:59:59.000Z

135

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates  

E-Print Network (OSTI)

.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

Nabben, Reinhard

136

Monolithic integration of GaAs and h~~~~Ga~.~Aslasers by molecular epitaxy on GaAs  

E-Print Network (OSTI)

where the thick cladding layer below the active laser region acts as a buffer layer to-yield comparable epitaxial regrowth of Ino.aGaesAs lasers through dielectric masks between GaAs laser stripes on a GaAs substrate has been used for the -first time- to monolithically integrate these two lasers emitting near 1

137

Kohlenstoffhaltige ternäre Verbindungen (V-Ge-C, Nb-Ga-C, Ta-Ga-C, Ta-Ge-C, Cr-Ga-C und Cr-Ge-C)  

Science Journals Connector (OSTI)

Die ternären Phasen V2GeC, Cr2GaC und Cr2GeC werden aus den Komponenten hergestellt und als H-Phasen identifiziert. Ferner dürften auch die H-Phasen Ti2GaC, und Ti2GeC existieren. In gleicher Weise hergestellte L...

W. Jeitschko; H. Nowotny; F. Benesovsky

1963-01-01T23:59:59.000Z

138

Univerza v Ljubljani Fakulteta za elektrotehniko  

E-Print Network (OSTI)

to EMF generated by domestic induction cookers Phys Med Biol 56 6149­60 Paper 3: Kos B, Valic B, Kotnik

Ljubljana, University of

139

Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes[Multiple Quantum Wells  

SciTech Connect

AlGaN/GaN strained layer superlattices have been employed in the cladding layers of InGaN multi-quantum well laser diodes grown by metalorganic chemical vapor deposition (MOCVD). Superlattices have been investigated for strain relief of the cladding layer, as well as an enhanced hole concentration, which is more than ten times the value obtained for bulk AlGaN films. Laser diodes with strained layer superlattices as cladding layers were shown to have superior structural and electrical properties compared to laser diodes with bulk AlGaN cladding layers. As the period of the strained layer superlattices is decreased, the threshold voltage, as well as the threshold current density, is decreased. The resistance to vertical conduction through p-type superlattices with increasing superlattice period is not offset by the increase in hole concentration for increasing superlattice spacing, resulting in higher voltages.

Hansen, M.; Abare, A.C.; Kozodoy, P.; Katona, T.M.; Craven, M.D.; Speck, J.S.; Mishra, U.K.; Coldren, L.A.; DenBaars, S.P.

2000-07-01T23:59:59.000Z

140

Radiation Hard AlGaN Detectors and Imager  

SciTech Connect

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

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141

Optimisation of doping cladding layers in AlGaInP/GaInP laser heterostructures  

SciTech Connect

The influence of cladding doping level on the characteristics of laser diodes, which are based on an AlGaInP/GaInP/GaAs system and emit at wavelengths of 670-680 nm, is studied. It is shown experimentally that, as the ratio of the cladding doping levels P/N increases, the inversion current density J{sub 0} and the differential gain {beta} also increase. A monotonic increase in the characteristic temperature T{sub 0} accompanies this process. The internal quantum yield {eta}{sub 0} of stimulated recombination has a maximum at P/N=2.1. Laser diodes with a mesastripe width of 100 {mu}m are manufactured. The cw radiation power emitted by them is as high as 1000 mW at an efficiency of 1.55 W A{sup -1}. (active media. lasers)

Chel'nyi, A A; Aluev, A V; Maslov, S V [M.F. Stel'makh Polyus Research and Development Institute, Moscow (Russian Federation)

2004-01-31T23:59:59.000Z

142

Graphene in ohmic contact for both n-GaN and p-GaN  

SciTech Connect

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26T23:59:59.000Z

143

Efficiency enhancement of InGaN/GaN solar cells with nanostructures  

SciTech Connect

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

2014-02-03T23:59:59.000Z

144

Fusion of radioactive $^{132}$Sn with $^{64}$Ni  

E-Print Network (OSTI)

Evaporation residue and fission cross sections of radioactive $^{132}$Sn on $^{64}$Ni were measured near the Coulomb barrier. A large sub-barrier fusion enhancement was observed. Coupled-channel calculations including inelastic excitation of the projectile and target, and neutron transfer are in good agreement with the measured fusion excitation function. When the change in nuclear size and shift in barrier height are accounted for, there is no extra fusion enhancement in $^{132}$Sn+$^{64}$Ni with respect to stable Sn+$^{64}$Ni. A systematic comparison of evaporation residue cross sections for the fusion of even $^{112-124}$Sn and $^{132}$Sn with $^{64}$Ni is presented.

J. F. Liang; D. Shapira; J. R. Beene; C. J. Gross; R. L. Varner; A. Galindo-Uribarri; J. Gomez del Campo; P. A. Hausladen; P. E. Mueller; D. W. Stracener; H. Amro; J. J. Kolata; J. D. Bierman; A. L. Caraley; K. L. Jones; Y. Larochelle; W. Loveland; D. Peterson

2007-04-05T23:59:59.000Z

145

Computing Free Energy Landscapes: Application to Ni-based Electrocatal...  

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Computing Free Energy Landscapes: Application to Ni-based Electrocatalysts with Pendant Amines for H2 Production and Oxidation. Computing Free Energy Landscapes: Application to...

146

Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN  

Science Journals Connector (OSTI)

Compared with conventionally grown thin InGaN wells, thick InGaN wells with digitally grown InN/GaN exhibit superior optical properties. The activation energy (48 meV) of thick InGaN...

Yu, Chun-Ta; Lai, Wei-Chih; Yen, Cheng-Hsiung; Hsu, Hsu-Cheng; Chang, Shoou-Jinn

2014-01-01T23:59:59.000Z

147

In: Proceedings of the 1995 International environmental conference; 1995 May 7-10; Atlanta, GA. Atlanta, GA: TAPPI PRESS: 445-448; 1995.  

E-Print Network (OSTI)

. Atlanta, GA: TAPPI PRESS: 445-448; 1995. ENVIRONMENTALLY SOUND ALTERNATIVES FOR UPGRADING MIXED OFFICE

Abubakr, Said

148

Surface Science Analysis of GaAs Photocathodes Following Sustained...  

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Spectrometry (RBS), Atomic Force Microscopy (AFM) and Secondary Ion Mass Spectrometry (SIMS). In addition, strained super-lattice GaAs photocathode samples, removed from the CEBAF...

149

P-type doping of GaN  

SciTech Connect

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

Wong, R.K.

2000-04-10T23:59:59.000Z

150

Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance  

Science Journals Connector (OSTI)

A contacted electroreflectance technique was used to investigate AlGaN/GaN heterostructures and their intrinsic electric field-induced properties. By studying variations in the electroreflectance with applied field spectral features associated with the AlGaN barrier the two-dimensional electron gas at the interface and bulk GaN were identified. Barrier-layer composition and electric field were determined from the AlGaN Franz–Keldysh oscillations. For a high mobilityheterostructure grown on SiC measured AlGaN polarizationelectric field and two-dimensional electron gas density approached values predicted by a standard bandstructure model. The two-dimensional electron gas produced a broad field-tunable first derivative electroreflectance feature. With a dielectric function calculation we describe the line shape and relative amplitude of the two-dimensional electron gas electroreflectance feature for a wide range of electron density and applied field values.

S. R. Kurtz; A. A. Allerman; D. D. Koleske; A. G. Baca; R. D. Briggs

2004-01-01T23:59:59.000Z

151

Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 {mu}m  

SciTech Connect

The spectral-kinetic properties of heterostructures with GaAs/GaAsSb-based and GaAsSb/InGaAs/GaAs-based quantum wells, emitting in the range of 1.0-1.2 {mu}m are studied with picosecond and nanosecond temporal resolution. Intense photoluminescence in the GaAsSb/InGaAs/GaAs structure, as well as an increase in the photoluminescence wavelength by a factor of 2.5 and a shift of the location of the maximum of the peak ({approx}100 meV) to the longer-wavelength region were observed up to room temperature. It is established that as the molar fraction of Sb and the thickness of the InGaAs layer increase, the energy of the fundamental transition decreases by a factor of 140 meV compared with the GaAsSb/InGaAs/GaAs structure with a lower Sb content and a smaller thickness of the InGaAs layer. At 300 K, the emission wavelength of such a structure was 1.18 {mu}m. In addition, an increase in the thickness of the InGaAs layer led to an increase in the room-temperature photoluminescence intensity by a factor of 60, which is associated with a decrease in the energy of the fundamental state for electrons in the InGaAs layer and, consequently, to larger electron localization and smaller temperature quenching of photoluminescence.

Morozov, S. V., E-mail: more@ipm.sci.-nnov.ru; Kryzhkov, D. I.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N.; Vikhrova, O. I. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)] [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

2013-11-15T23:59:59.000Z

152

Vacancy-Induced 2×2 Reconstruction of the Ga(111) Surface of GaAs  

Science Journals Connector (OSTI)

Vacancy formation on the GaAs(111) surface is calculated to be strongly exothermic in character. The creation of one vacancy in each 2×2 cell allows the remaining Ga surface atoms to have a large inward relaxation, resulting in a 2.3-eV reduction in energy. It also transforms the polar (111) surface into a nonpolar (110)-like surface. The calculations provide strong support for the vacancy model of Tong et al., which is determined from analysis of low-energy-electron-diffraction data.

D. J. Chadi

1984-05-21T23:59:59.000Z

153

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Néel, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

154

Observation of photo darkening in self assembled InGaAs/GaAs quantum dots  

SciTech Connect

Photo darkening was observed in epitaxial InGaAs/GaAs quantum dots (QDs). The photoluminescence (PL) intensity of the QDs showed a non-reversible decrease under continuous laser irradiation. The time constants varied from tens of minutes to several hours, depending on the applied laser power. Based on the spectral evolution, it was concluded that the observed phenomenon should originate from laser induced structural damage and a sustained increase of non-radiative recombination rate in the wetting layer. Additionally, according to the PL decay dynamics at different laser powers, it is argued that there should exist other processes that hinder PL degradation at a high laser power.

Zhang Hongyi; Chen Yonghai; Zhou Xiaolong; Jia Yanan; Ye Xiaoling; Xu Bo; Wang Zhanguo [Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

2013-05-07T23:59:59.000Z

155

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique  

SciTech Connect

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

156

Enhanced photocatalytic efficiency in zirconia buffered n-NiO/p-NiO single crystalline heterostructures by nanosecond laser treatment  

SciTech Connect

We report the formation of NiO based single crystalline p-n junctions with enhanced photocatalytic activity induced by pulsed laser irradiation. The NiO epilayers were grown on Si(001) substrates buffered with cubic yttria-stabilized zirconia (c-YSZ) by using pulsed laser deposition. The NiO/c-YSZ/Si heterostructures were subsequently laser treated by 5 pulses of KrF excimer laser (pulse duration = 25 Multiplication-Sign 10{sup -9} s) at lower energies. Microstructural studies, conducted by X-ray diffraction ({theta}-2{theta} and {phi} techniques) and high resolution transmission electron microscope, showed a cube-on-cube epitaxial relationship at the c-YSZ/Si interface; the epitaxial relationship across the NiO/c-YSZ interface was established as NiO<111 > Double-Vertical-Line Double-Vertical-Line c-YSZ<001> and in-plane NiO<110> Double-Vertical-Line Double-Vertical-Line c-YSZ<100>. Electron microscopy studies showed that the interface between the laser annealed and the pristine region as well as the NiO/c-YSZ interface was atomically sharp and crystallographically continuous. The formation of point defects, namely oxygen vacancies and NiO, due to the coupling of the laser photons with the NiO epilayers was confirmed by XPS. The p-type electrical characteristics of the pristine NiO epilayers turned to an n-type behavior and the electrical conductivity was increased by one order of magnitude after laser treatment. Photocatalytic activity of the pristine (p-NiO/c-YSZ/Si) and the laser-annealed (n-NiO/p-NiO/c-YSZ/Si) heterostructures were assessed by measuring the decomposition rate of 4-chlorophenol under UV light. The photocatalytic reaction rate constants were determined to be 0.0059 and 0.0092 min{sup -1} for the as-deposited and the laser-treated samples, respectively. The enhanced photocatalytic efficiency was attributed to the suppressed charge carrier recombination in the NiO based p-n junctions and higher electrical conductivity. Besides, the oxygen vacancies ease the adsorption of 4-chlorophenol, hydroxyl, and water molecules to the surface. Thus, n-NiO/p-NiO single crystalline catalysts can be introduced as a potent candidate to remediate the environmental pollution.

Molaei, R.; Bayati, M. R.; Alipour, H. M.; Nori, S.; Narayan, J. [Department of Materials Science and Engineering, NC State University, EB-1, Raleigh, North Carolina 27695-7907 (United States)] [Department of Materials Science and Engineering, NC State University, EB-1, Raleigh, North Carolina 27695-7907 (United States)

2013-06-21T23:59:59.000Z

157

Formation of a Novel Ordered Ni3Al Surface Structure by Codeposition on NiAl(110)  

SciTech Connect

The formation of a new type of ordered 2D Ni3Al overlayer by low-temperature codeposition on NiAl(110) is demonstrated by kinetic Monte Carlo simulation of a multisite atomistic lattice-gas model with a precise treatment of surface diffusion kinetics. Simultaneous codeposition with 3?1 Ni?Al yields poor ordering at 300 K but well-ordered structures by ?500??K. Sequential codeposition of Ni then Al yields unmixed core-ring nanostructures at 300 K but strong intermixing and ordering by ?500??K.

Han, Yong; Unal, Baris; Evans, James W.

2012-05-23T23:59:59.000Z

158

Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells  

SciTech Connect

In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

2014-01-21T23:59:59.000Z

159

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

160

Paramagnetic neutron scattering from Ni (invited)  

Science Journals Connector (OSTI)

New polarized beammeasurements have been carried out in the paramagnetic phase of 6 0Ni in order to enlarge the (q ?) range previously studied by Steinsvoll e t a l. Magnetic scattering has been detected up to halfway to the zone boundary. The results can be successfully interpreted in terms of a diffusive?type scattering function over an unexpected wide (q ?) range qneutron data are also compared with the predictions of the very recent band model by Callaway. Finally we point out important similarities and differences in the paramagnetic scattering from localized systems such as EuO and itinerant systems and discuss the universality of the paramagnetic scattering function.

P. Böni; G. Shirane

1985-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Effect of Pd on the Ni{sub 2}Si stress relaxation during the Ni-silicide formation at low temperature  

SciTech Connect

The thermally induced solid-state reaction between a 50-nm-thick Ni(6%Pd) layer and a Si(100) substrate was investigated using in situ and simultaneous x-ray diffraction and sheet resistance. The reaction begins with the growth of the stressed {delta}-Ni{sub 2}Si phase, and the transient {theta}-Ni{sub 2}Si. At the end of the {theta}-Ni{sub 2}Si consumption, a NiSi seed is formed. Then, the {delta}-Ni{sub 2}Si relaxation occurs simultaneously with its subsequent growth and the Pd out diffusion from the unreacted Ni(Pd) layer. It is suggested that the driving force for the Pd diffusion out of the metal layer is linked to both the higher solubility of Pd in NiSi compared to Ni{sub 2}Si and to the Ni{sub 2}Si relaxation.

Putero, M.; Mangelinck, D. [Aix-Marseille Univ., IM2NP, Faculte des Sciences de Jerome, F-13397 Marseille (France); CNRS, IM2NP-UMR 7334, Faculte des Sciences de Jerome, F-13397 Marseille (France)

2012-09-10T23:59:59.000Z

162

Localized corrosion of GaAs surfaces and formation of porous GaAs  

SciTech Connect

The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

Schmuki, P.; Vitus, C.M.; Isaacs, H.S. [Brookhaven National Lab., Upton, NY (United States); Fraser, J.; Graham, M.J. [National Research Council of Canada, Ottawa, ON (Canada). Inst. for Microstructural Sciences

1995-12-01T23:59:59.000Z

163

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network (OSTI)

after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

164

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

165

E-Print Network 3.0 - al-ni-co decagonal quasicrystal Sample...  

NLE Websites -- All DOE Office Websites (Extended Search)

Summary: of decagonal Al-Ni-Co K. Pussi Department of Electrical Engineering, Lappeenranta University of Technology, P... . EARLIER WORK ON d-Al-Ni-Co STRUCTURES Decagonal...

166

''Bare'' single-particle energies in Ni-56  

E-Print Network (OSTI)

The structure of the low-lying levels in the mirror nuclei Ni-57 and Cu-57 is described within the extended unified model. The problem of single-particle energies in Ni-56 is treated in detail. ''Bare'' single-particle energies are extracted from...

Trache, L.; Kolomiets, A.; Shlomo, S.; Heyde, K.; Dejbakhsh, H.; Gagliardi, Carl A.; Tribble, Robert E.; Zhou, XG; Jacob, VE; Oros, AM.

1996-01-01T23:59:59.000Z

167

Lanthanide Al-Ni base Ericsson cycle magnetic refrigerants  

DOE Patents (OSTI)

A magnetic refrigerant for a magnetic refrigerator using the Ericsson thermodynamic cycle comprises DyAlNi and (Gd{sub 0.54}Er{sub 0.46})AlNi alloys having a relatively constant {Delta}Tmc over a wide temperature range. 16 figs.

Gschneidner, K.A. Jr.; Takeya, Hiroyuki

1995-10-31T23:59:59.000Z

168

Lanthanide Al-Ni base Ericsson cycle magnetic refrigerants  

DOE Patents (OSTI)

A magnetic refrigerant for a magnetic refrigerator using the Ericsson thermodynamic cycle comprises DyAlNi and (Gd.sub.0.54 Er.sub.0.46)AlNi alloys having a relatively constant .DELTA.Tmc over a wide temperature range.

Gschneidner, Jr., Karl A. (Ames, IA); Takeya, Hiroyuki (Ibaraki, JP)

1995-10-31T23:59:59.000Z

169

Phase relations in the system Ni-As  

Science Journals Connector (OSTI)

...n' ' , / / I , 852(N_i,As)+VN',Asz+L+V ima+L+v/IpnncC;rVrlrl+V(NiAs)+NisAsz+V-, , I I// INIs.xAs +mama+ncll Ni,_xAS,+V/i +V +VJ[ Inc+prm+V , , , , , , , .i,, .! , . I0 20 30 40 50 60 70 Weight per...

R. A. Yund

170

Low temperature epitaxial growth of Ge on cube- textured Ni  

SciTech Connect

Quasi- single crystal Ge films were grown on [001]<010> textured Ni substrate at a temperature of 350 oC using an insulating buffer layer of CaF2. A direct deposition of Ge on Ni at 350 oC was shown to alloy with Ni. From x- ray pole figure analysis, it was shown that Ge grew epitaxially with the same orientation as CaF2 and the dispersions in the out- of- plane and in- plane directions were found to be 1.7 0.1o and 6 1o, respectively. In the out- of- plane direction, Ge[111]||CaF2[111]||Ni[001]. In addition, the Ge consisted of four equivalent in- plane oriented domains such that two mutually orthogonal directions: Ge 211 and Ge 011 are parallel to mutually orthogonal directions: Ni 110 and Ni 110 , respectively of the Ni(001) surface. This was shown to be originated from the four equivalent in- plane oriented domains of CaF2 created to minimize the mismatch strain between CaF2 and Ni in those directions.

GIARE, C [Rensselaer Polytechnic Institute (RPI); Palazzo, J [Rensselaer Polytechnic Institute (RPI); Goyal, Amit [ORNL; WANG, G [Rensselaer Polytechnic Institute (RPI); LU, T [Rensselaer Polytechnic Institute (RPI)

2012-01-01T23:59:59.000Z

171

Autocatalytic decomposition of water on Ni(110)  

SciTech Connect

The interaction of water with clean Ni(110) at temperatures between 425 and 770 K has been studied by work function ([Delta][phi]), desorption mass analysis, and low-energy electron diffraction (LEED). Water is observed to dissociate on clean Ni(110), forming adsorbed oxygen and H[sub 2](g) in a process which is itself catalyzed (and hence termed autocatalytic) by the adsorbed oxygen product. Initial dissociation of water is believed to originate on defects where adsorbed oxygen then promotes growth of O (2 [times] 1) islands in a process which becomes self-poisoning in the limit of saturation of the (2 [times] 1) phase (0.5 ML (ML = monolayer)). The growth kinetics indicate the autocatalysis process is most active when the oxygen coverage is 0.1 ML. A statistical theory supported by computer simulation is developed which models the autocatalytic growth kinetics in terms of nucleation of islands along step edges. The temperature dependence of autocatalysis exhibits a maximum at approx. 600 K. This complex temperature dependence is explained in terms of transition-state theory. 25 refs., 10 figs.

Callen, B.W.; Griffiths, K.; Norton, P.R. (Univ. of Western Ontario, London (Canada)); Harrington, D.A. (Univ. of Victoria, British Columbia (Canada))

1992-12-24T23:59:59.000Z

172

The development of integrated chemical microsensors in GaAs  

SciTech Connect

Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

1999-11-01T23:59:59.000Z

173

The Essentials for GA Water Planning The Relationship  

E-Print Network (OSTI)

Water Plan and the Alabama-Florida-Georgia Water Sharing Dispute (The failure to agree on the two Management F. Conservation & Reuse a. Programs for Water Use Efficiency b. Consumptive Use & Return Flows GThe Essentials for GA Water Planning The Relationship Between the Proposed GA State Comprehensive

Rosemond, Amy Daum

174

Structure of a Si(100)2×2-Ga surface  

Science Journals Connector (OSTI)

The 2×2 structure formed on a Ga-adsorbed Si(100) surface is determined using tensor low-energy electron diffraction. I-V curves of the parallel dimer model are in excellent agreement with those of the experiment, indicating that the actual surface has parallel dimer structure. Specific displacements of the topmost two surface layers (the protrusion of the Ga dimer toward the vacuum, the increase of the bond length of the Ga dimer, the stretching of the Si dimer, and the movement of the Si dimer toward the Ga dimer) with the elongation of the Si dimer back bond are observed in the optimized geometry. The Ga-Si bond angle measured from the Si(100) surface plane is recovered with these displacements from that of the ideal geometry where each bond length is assumed to be the sum of Pauling covalent radii. Subsurface layers are also deformed to keep the bond lengths near their bulk values.

H. Sakama; K. Murakami; K. Nishikata; A. Kawazu

1994-11-15T23:59:59.000Z

175

Electronic structure of metallic antiperovskite compound GaCMn3  

Science Journals Connector (OSTI)

We have investigated the electronic structures of antiperovskite GaCMn3 and related Mn compounds SnCMn3, ZnCMn3, and ZnNMn3. In the paramagnetic state of GaCMn3, the Fermi surface nesting feature along the ?R direction is observed, which induces the antiferromagnetic (AFM) spin ordering with the nesting vector Q??R. Calculated susceptibilities confirm the nesting scenario for GaCMn3, and also explain various magnetic structures of other antiperovskite compounds. Through the band folding effect, the AFM phase of GaCMn3 is stabilized. Nearly equal densities of states at the Fermi level in the ferromagnetic and AFM phases of GaCMn3 indicate that two phases are competing in the ground state.

J. H. Shim; S. K. Kwon; B. I. Min

2002-07-10T23:59:59.000Z

176

Formation of a Novel Ordered Ni3Al Surface Structure by Codeposition on NiAl(110)  

E-Print Network (OSTI)

The formation of a new type of ordered 2D Ni3Al overlayer by low-temperature codeposition on NiAl(110) is demonstrated by kinetic Monte Carlo simulation of a multisite atomistic lattice-gas model with a precise treatment ...

Han, Yong

177

Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics  

E-Print Network (OSTI)

injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

Klotzkin, David

178

Surface roughening during depth profiling by Secondary Ion Mass Spectrometry (SIMS) in GaAlAs and GaAs  

Science Journals Connector (OSTI)

During bombardment of Ga1?xAlxAs and GaAs with oxygen we found an abrupt transition to higher sputter rates, change of the useful yield and significant increase of surface roughness at a well defined depth, which...

M. Gericke; T. Lill; M. Trapp; C. -E. Richter…

179

GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization  

E-Print Network (OSTI)

radiation hardness than Si, GaAs, CdS and GaN, therefore it should be suitable for space applications. Last novel optoelectronic devices circumventing the problem of p-type doping of ZnO. In such Al devices become reality: the problem of p-type doping of ZnO. So far, there is no way to reliably produce

Wetzel, Christian M.

180

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network (OSTI)

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network (OSTI)

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm GaN-on-Si...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

182

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network (OSTI)

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

183

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network (OSTI)

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

184

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1  

E-Print Network (OSTI)

Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1 Jie Lian,2,3 Wei Lu,4 and Lumin Wang1,5,* 1 Department of Materials Science and Engineering, University Arbor, Michigan 48109, USA 3 Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer

Lu, Wei

185

An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3  

E-Print Network (OSTI)

out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

186

Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics  

SciTech Connect

In this letter we report on the inductively coupled plasma reactive ion etching (ICP-RIE) of InGaAsSb and AlGaAsSb for the fabrication of quaternary monolithic interconnected module (MIM) thermophotovoltaic (TPV) devices. A rapid dry etch process is described that produces smooth surfaces using BCl[sub]3 for AlGaAsSb and InGaAsSb capped with GaSb. Uncapped InGaAsSb was etched by adding an H[sub]2 plasma preclean to reduce surface oxides. InGaAsSb etch rate was studied as a function of accelerating voltage, RF power, temperature and pressure. The etch conditions found for InGaAsSb were used for AlGaAsSb etching to determine the effectiveness for isolation of the MIM cells.

Palmisiano, M. N.; Peake, G. M.; Shul, R. J.; Ashby, C. I.; Cederberg, J. G.; Hafich, M. J.; Biefeld, R. M.

2002-10-01T23:59:59.000Z

187

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications  

SciTech Connect

We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-03-24T23:59:59.000Z

188

Evaluation of electron capture reaction rates in Ni isotopes in stellar environments  

SciTech Connect

Electron capture rates in Ni isotopes are studied in stellar environments, that is, at high densities and high temperatures during the core-collapse and postbounce explosive nucleosynthesis in supernovae. Reaction rates in {sup 58}Ni and {sup 60}Ni, as well as in {sup 56}Ni, {sup 62}Ni, and {sup 64}Ni, are evaluated by shell-model calculations with the use of a new shell-model Hamiltonian in the fp shell, GXPF1J. While the previous shell-model calculations failed to reproduce the measured peaks of Gamow-Teller strength in {sup 58}Ni and {sup 60}Ni, the present new Hamiltonian is found to reproduce them very well, as well as the capture rates obtained from the observed strengths. Strengths and energies of the Gamow-Teller transitions in {sup 56}Ni, {sup 62}Ni, and {sup 64}Ni are also found to be consistent with the observations.

Suzuki, Toshio [Department of Physics and Graduate School of Integrated Basic Sciences, College of Humanities and Sciences, Nihon University Sakurajosui 3-25-40, Setagaya-ku, Tokyo 156-8550 (Japan); Center for Nuclear Study, University of Tokyo, Hirosawa, Wako-shi, Saitama 351-0198 (Japan); National Astronomical Observatory of Japan, Mitaka, Tokyo 181-8588 (Japan); Honma, Michio [Center for Mathematical Sciences, University of Aizu, Aizu-Wakamatsu, Fukushima 965-8580 (Japan); Mao, Helene [ENSPS, Pole API-Parc d'Innovation, Boulevard Sebastien Brant, BP 10413, F-67412 Illkirch Cedex (France); Otsuka, Takaharu [Department of Physics and Center for Nuclear Study, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, Michigan 48824 (United States); Kajino, Toshitaka [National Astronomical Observatory of Japan, Mitaka, Tokyo 181-8588 (Japan); Deaprtment of Astronomy, Graduate School of Science, University of Tokyo, Bunkyo-ku, Tokyo 113-0033 (Japan)

2011-04-15T23:59:59.000Z

189

Development of Co-Ni-Ga Ferromagnetic Shape Memory Alloys (FSMAs) by Investigating the Effects of Solidification Processing Parameters  

E-Print Network (OSTI)

10 Fig. 6. Coil-spring example illustrating the differencesgiven in Fig. 6. Fig. 6. Coil-spring example illustrating

Kalaantari, Haamun

2013-01-01T23:59:59.000Z

190

Magnetic-field effects on quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells  

Science Journals Connector (OSTI)

We have used the variational procedure in the effective-mass and nondegenerate parabolic band approximations in order to investigate the effects of a magnetic field on the exciton effective mass and dispersion in semiconductor heterostructures. Calculations are performed for bulk GaAs, and two-dimensional and quasi-two-dimensional excitons in coupled GaAs?(Ga,Al)As quantum wells for applied magnetic fields perpendicular to the layers. A simple hydrogenlike envelope wave function provides the expected behavior for the exciton dispersion in a wide range of the center-of-mass momenta, and an analytical expression for the exciton effective mass is obtained. Present results lead to a magnetic-field dependent exciton effective mass and dispersion in quite good agreement with available experimental measurements in coupled GaAs?(Ga,Al)As quantum wells.

E. Reyes-Gómez, L. E. Oliveira, and M. de Dios-Leyva

2005-01-14T23:59:59.000Z

191

Sputtering of Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN by electrosprayed nanodroplets  

SciTech Connect

This article presents a characterization of the damage caused by energetic beams of electrosprayed nanodroplets striking the surfaces of single-crystal semiconductors including Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN. The sputtering yield (number of atoms ejected per projectile's molecule), sputtering rate, and surface roughness are measured as functions of the beam acceleration potential. The maximum values of the sputtering yields range between 1.9 and 2.2 for the technological important but difficult to etch SiC and GaN respectively, and 4.5 for Ge. The maximum sputtering rates for the non-optimized beam flux conditions used in our experiments vary between 409?nm/min for SiC and 2381?nm/min for GaSb. The maximum sputtering rate for GaN is 630?nm/min. Surface roughness increases modestly with acceleration voltage, staying within 2?nm and 20?nm for all beamlet acceleration potentials and materials except Si. At intermediate acceleration potentials, the surface of Si is formed by craters orders of magnitude larger than the projectiles, yielding surface roughness in excess of 60?nm. The effect of projectile dose is studied in the case of Si. This parameter is correlated with the formation of the large craters typical of Si, which suggests that the accumulation of damage following consecutive impacts plays an important role in the interaction between beamlet and target.

Borrajo-Pelaez, Rafael; Grustan-Gutierrez, Enric; Gamero-Castaño, Manuel, E-mail: mgameroc@uci.edu [Department of Mechanical and Aerospace Engineering, University of California, Irvine, California 92697 (United States)

2013-11-14T23:59:59.000Z

192

Phase equilibria, formation, crystal and electronic structure of ternary compounds in Ti-Ni-Sn and Ti-Ni-Sb ternary systems  

SciTech Connect

The phase equilibria of the Ti-Ni-Sn and Ti-Ni-Sb ternary systems have been studied in the whole concentration range by means of X-ray and EPM analyses at 1073 K and 873 K, respectively. Four ternary intermetallic compounds TiNiSn (MgAgAs-type), TiNi{sub 2-x}Sn (MnCu{sub 2}Al-type), Ti{sub 2}Ni{sub 2}Sn (U{sub 2}Pt{sub 2}Sn-type), and Ti{sub 5}NiSn{sub 3} (Hf{sub 5}CuSn{sub 3}-type) are formed in Ti-Ni-Sn system at 1073 K. The TiNi{sub 2}Sn stannide is characterized by homogeneity in the range of 50-47 at% of Ni. The Ti-Ni-Sb ternary system at 873 K is characterized by formation of three ternary intermetallic compounds, Ti{sub 0.8}NiSb (MgAgAs-type), Ti{sub 5}Ni{sub 0.45}Sb{sub 2.55} (W{sub 5}Si{sub 3}-type), and Ti{sub 5}NiSb{sub 3} (Hf{sub 5}CuSn{sub 3}-type). The solubility of Ni in Ti{sub 0.8}NiSb decreases number of vacancies in Ti site up to Ti{sub 0.91}Ni{sub 1.1}Sb composition. - Graphical abstract: Isothermal section of the Ti-Ni-Sn phase diagram and DOS distribution in hypothetical TiNi{sub 1+x}Sn solid solution. Highlights: Black-Right-Pointing-Pointer Ti-Ni-Sn phase diagram was constructed at 1073 K. Black-Right-Pointing-Pointer Four ternary compounds are formed: TiNiSn, TiNi{sub 2-x}Sn, Ti{sub 2}Ni{sub 2}Sn, and Ti{sub 5}NiSn{sub 3}. Black-Right-Pointing-Pointer Three ternary compounds exist in Ti-Ni-Sb system at 873 K. Black-Right-Pointing-Pointer The TiNi{sub 2}Sb compound is absent.

Romaka, V.V., E-mail: romakav@yahoo.com [Department of Materials Engineering and Applied Physics, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Rogl, P. [Institut fur Physikalische Chemie der Universitat Wien, Wahringerstrabe 42, A-1090 Wien (Austria); Romaka, L.; Stadnyk, Yu. [Department of Inorganic Chemistry, Ivan Franko National University of Lviv, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Melnychenko, N.; Grytsiv, A.; Falmbigl, M. [Institut fur Physikalische Chemie der Universitat Wien, Wahringerstrabe 42, A-1090 Wien (Austria); Skryabina, N. [Perm State University, Bukireva Str. 15, 614990 Perm (Russian Federation)

2013-01-15T23:59:59.000Z

193

Geometric and Electronic Structures of the Ni(I) and Methyl-Ni(III)  

NLE Websites -- All DOE Office Websites (Extended Search)

9 9 Geometric and Electronic Structures of the Ni(I) and Methyl-Ni(III) Intermediates of Methyl-Coenzyme M Reductase Methyl-coenzyme M reductase (MCR) from methanogenic archaea catalyzes the terminal step in biological methane synthesis. Using coenzyme B (CoBSH) as the two-electron donor, MCR reduces methyl-coenzyme M (methyl-SCoM) to form methane and the heterodisulfide product, CoBS-SCoM. MCR contains an essential redox active nickel tetrapyrrolic cofactor called coenzyme F430 at its active site, which is active in the reduced Ni(I) state (MCRred1). All of the biologically generated methane, amounting to 1 billion tons per annum globally, is formed by MCR. Furthermore, recent evidence indicates that anaerobic methane oxidation is also catalyzed by MCR and occurs by a reversal of the methane synthesis reaction. Methane is a potent greenhouse gas, trapping 20 times more heat than CO2. In addition, methane is also an important and clean fuel as it produced the least amount of CO2 per unit of heat released. Thus, it is critically important to understand the mechanism of formation of the smallest hydrocarbon in nature.

194

Graphene Monolayer Rotation on Ni(111) Facilities Bilayer Graphene Growth  

SciTech Connect

Synthesis of bilayer graphene by chemical vapor deposition is of importance for graphene-based field effect devices. Here, we demonstrate that bilayer graphene preferentially grows by carbon-segregation under graphene sheets that are rotated relative to a Ni(111) substrate. Rotated graphene monolayer films can be synthesized at growth temperatures above 650 C on a Ni(111) thin-film. The segregated second graphene layer is in registry with the Ni(111) substrate and this suppresses further C-segregation, effectively self-limiting graphene formation to two layers.

Batzill M.; Sutter P.; Dahal, A.; Addou, R.

2012-06-11T23:59:59.000Z

195

On the road to doubly-magic {sup 48}Ni  

SciTech Connect

A relativistic primary beam of {sup 58}Ni from the SIS synchrotron at GSI was used to produce proton-rich isotopes in the titanium-to-nickel region by projectile fragmention at the FRS. We report here on the first observation of the T{sub z}=-7/2 nuclei {sup 45}Fe and {sup 49}Ni. In addition, the new isotope {sup 42}Cr (T{sub z}=-3) was identified. This opens the route to the yet unobserved doubly-magic nucleus {sup 48}Ni.

Blank, B.; Czajkowski, S.; Davi, F.; Del Moral, R.; Dufour, J. P.; Fleury, A.; Marchand, C.; Pravikoff, M. S. [Centre d'Etudes Nucleaires de Bordeaux-Gradignan, F-33175 Gradignan Cedex (France); Benlliure, J.; Boue, F.; Collatz, R.; Heinz, A.; Hellstroem, M.; Hu, Z.; Roeckl, E.; Shibata, M.; Suemmerer, K. [Gesellschaft fuer Schwerionenforschung, Planckstr. 1, D-64291 Darmstadt (Germany); Lewitowicz, M. [Grand Accelerateur National des Ions Lourds, B.P. 5027, F-14021 Caen Cedex (France); Janas, Z.; Karny, M. [Institute of Experimental Physics, University of Warsaw, PL-00-681 Warsaw, Hoza 69 (Poland)] (and others)

1998-12-21T23:59:59.000Z

196

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure  

SciTech Connect

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04T23:59:59.000Z

197

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

198

Exciton recombination dynamics in InxGa1-xAs/GaAs quantum wells  

Science Journals Connector (OSTI)

Low-temperature decay times ?PL are reported for a series of InxGa1-xAs/GaAs quantum wells. These show a nearly linear increase with increasing thickness (4?Lz?10 nm, x=0.15) but recombination in the widest well (12 nm) is dominated by nonradiative effects. The decay time increases almost linearly with temperature up to 50 K, as expected for free excitons. An increase in ?PL with increasing In composition (0.05?x?0.25, Lz=8 nm) is also observed. Wells with different In compositions exhibit a similar temperature behavior and there is a weak influence of strain on the decay time. Additional peaks in the photoluminescence spectra occur to the low-energy side of the free-exciton peaks. These features, which exhibit longer decay times, are attributed to excitons localized in In-rich islands arising from indium segregation.

Haiping Yu; Christine Roberts; Ray Murray

1995-07-15T23:59:59.000Z

199

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes  

SciTech Connect

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-07-07T23:59:59.000Z

200

Middle distillate hydrotreatment zeolite catalysts containing Pt/Pd or Ni  

E-Print Network (OSTI)

A study on middle distillate hydrotreatment zeolite catalysts containing Pt/Pd and/or Ni was performed. The effect of the addition of the corresponding CoMo, CoMoPd, CoMoPtPd and CoMoNi in PdNiPt-zeolite, Pt-zeolite, Ni-zeolite, and Pd...

Marin-Rosas, Celia

2009-05-15T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Photovoltaic properties of GaAs:Be nanowire arrays  

SciTech Connect

Arrays of GaAs:Be nanowires are synthesized by molecular beam epitaxy on GaAs(111)B substrates. Prototypes of photovoltaic converters in which the grown nanowire arrays are used as active layers are produced by means of successive photolithography, etching, and metallization processes. Studying the photovoltaic properties of the fabricated structures using a solar radiation simulator demonstrates that the solarenergy conversion efficiency is about 0.1%. The value of the efficiency recalculated with the area occupied by the p-type nanowires on the surface of the n-type GaAs substrate taken into account amounts to 1.1%.

Bouravleuv, A. D.; Beznasyuk, D. V.; Gilstein, E. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Tchernycheva, M.; Luna Bugallo, A. De; Rigutti, L. [University Paris Sud 11, Institut d'Electronique Fondamentale UMR CNRS 8622 (France); Yu, L. [CNRS, Laboratoire de Physique des Interfaces et des Couches Minces (LPICM), Ecole Polytechnique (France); Proskuryakov, Yu. [University of Liverpool, Stephenson Institute for Renewable Energy (United Kingdom); Shtrom, I. V.; Timofeeva, M. A. [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation); Samsonenko, Yu. B.; Khrebtov, A. I.; Cirlin, G. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-06-15T23:59:59.000Z

202

Photocurrent Spectroscopy of Single Wurtzite GaAs Nanowires  

SciTech Connect

Photocurrent of single wurtzite GaAs nanowires grown by Au-assisted molecular beam epitaxy is measured at room and low temperature (10 K). At room temperature a high photo-response with more than two orders of magnitude increase of current is observed. The wavelength dependence of the photocurrent shows a sharp change near the zinc blende GaAs band gap. The absence of the free exciton peak in the low temperature photocurrent spectrum, and problems related to determining the exact position of the energy bandgap of wurtzite GaAs from the observed data are discussed.

Kim, D. C.; Ahtapodov, L.; Boe, A. B.; Moses, A. F.; Dheeraj, D. L.; Fimland, B. O.; Weman, H. [Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim (Norway); Choi, J. W.; Ji, H.; Kim, G. T. [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

2011-12-23T23:59:59.000Z

203

Effects of Ga ion-beam irradiation on monolayer graphene  

SciTech Connect

The effects of Ga ion on the single layer graphene (SLG) have been studied by Raman spectroscopy (RS), SEM, and field-effect characterization. Under vacuum conditions, Ga ion-irradiation can induce disorders and cause red shift of 2D band of RS, rather than lattice damage in high quality SLG. The compressive strain induced by Ga ion decreases the crystalline size in SLG, which is responsible for the variation of Raman scattering and electrical properties. Nonlinear out-put characteristic and resistance increased are also found in the I-V measurement. The results have important implications during CVD graphene characterization and related device fabrication.

Wang, Quan; Mao, Wei; Zhang, Yanmin; Shao, Ying; Ren, Naifei [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China)] [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Ge, Daohan [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China) [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2013-08-12T23:59:59.000Z

204

Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs  

Science Journals Connector (OSTI)

Electrolyte electroreflectance (EER) experiments were performed on In 0.22 Ga 0.78 As/GaAs single quantum wells grown by the conventional molecular-beam-epitaxy (MBE) shutter operation and also by modified MBE shutter operation intended to form more compositionally abrupt normal and inverted interfaces. The latter included controlled thermal desorption of the surface segregated In at the InGaAs layer surface (flash off) and the deposition of In at the InGaAs/GaAs interface to eliminate compositional broadening (predeposition). The fundamental energy gap and subband transitions were determined experimentally and compared with an accurate calculation of the potential well problem including strain. These results confirmed the segregation of In atoms near the interface. The segregation was maximum in the conventional (normal) MBE sample and least with the modified growth incorporating predeposition and flash off as expected. The segregated atoms are observed to act as dopants and form junctions near the InGaAs/GaAs interface. This study shows that EER can be used as an effective tool for studying the segregation process in MBE growth.

K. Chattopadhyay; J. Aubel; S. Sundaram; J. E. Ehret; R. Kaspi; Keith R. Evans

1997-01-01T23:59:59.000Z

205

Ni(NiO)/single-walled carbon nanotubes composite: Synthesis of electro-deposition, gas sensing property for NO gas and density functional theory calculation  

SciTech Connect

Graphical abstract: The Ni(NiO)/semiconducting single-walled carbon nanotubes composite collected from the cathode after electro-deposition shows a high sensitivity to low-concentration NO gas at room temperature (18 °C). Display Omitted Highlights: ? Ni(NiO) nanoparticles were deposited on semiconducting SWCNTs by electro-deposition. ? Ni(NiO)/semiconducting SWCNTs film shows a high sensitivity to NO gas at 18 °C. ?Theoretical calculation reveals electron transfer from SWCNTs to NO via Ni. -- Abstract: Single-walled carbon nanotubes which contains metallic SWCNTs (m-SWCNTs) and semiconducting SWCNTs (s-SWCNTs) have been obtained under electric arc discharge. Their separation can be effectively achieved by the electro-deposition method. The Ni(NiO)/s-SWCNTs composite was found on cathode where Ni was partially oxidized to NiO at ambient condition with Ni(NiO) nanoparticles deposited uniformly on the bundles of SWCNTs. These results were confirmed by Raman spectra, transmission electron microscopy (TEM), scanning electron microscopy (SEM), UV–vis–NIR and TG characterizations. Furthermore, investigation of the gas sensing property of Ni(NiO)/s-SWCNTs composite film to NO gas at 18 °C demonstrated the sensitivity was approximately 5% at the concentration of 97 ppb. Moreover, density functional theory (DFT) calculations were performed to explore the sensing mechanism which suggested the adsorption of NO molecules onto the composite through N–Ni interaction as well as the proposition of electron transfer mechanisms from SWCNTs to NO via the Ni medium.

Li, Li; Zhang, Guo; Chen, Lei [Key Laboratory of Chemical Engineering Process and Technology for High-efficiency Conversion, College of Heilongjiang Province, Heilongjiang University, Harbin 150080 (China)] [Key Laboratory of Chemical Engineering Process and Technology for High-efficiency Conversion, College of Heilongjiang Province, Heilongjiang University, Harbin 150080 (China); Bi, Hong-Mei [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080 (China)] [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080 (China); Shi, Ke-Ying, E-mail: shikeying2008@yahoo.cn [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080 (China)] [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080 (China)

2013-02-15T23:59:59.000Z

206

The effect of CdS QDs structure on the InGaP/GaAs/Ge triple junction solar cell efficiency  

Science Journals Connector (OSTI)

This work describes optical and electrical characteristics of InGaP/GaAs/Ge triple-junction (T-J) solar cells with CdS quantum dots (QDs) ... quantum dot effectively enhance the overall power conversion efficiency

Chen-Chen Chung; Binh Tinh Tran; Hau-Vei Han; Yen-Teng Ho…

2014-03-01T23:59:59.000Z

207

Improvement of orange ii photobleaching by moderate Ga3+ doping of titania and detrimental effect of structural disorder on Ga overloading  

Science Journals Connector (OSTI)

Highly photoactive Ga3+-doped anatase modification of titania was prepared by homogeneous hydrolysis of aqueous solutions mixture of titanium oxo-sulphate TiOSO4 and gallium(III) nitrate with urea. Incorporation of Ga3+ ...

Václav Štengl, Jilí Henych, Michaela Slušná, Tomáš Matys Grygar, Jana Velická, Martin Kormunda

2014-01-01T23:59:59.000Z

208

Kinetics of indirect photoluminescence in GaAs/AlxGa1?x As double quantum wells in a random potential with a large amplitude  

Science Journals Connector (OSTI)

The kinetics of indirect photoluminescence of GaAs/AlxGa1?x As double quantum wells, characterized by a random potential with a large amplitude (the linewidth of the indirect photoluminescence is ...

L. V. Butov; A. V. Mintsev; A. I. Filin…

1999-05-01T23:59:59.000Z

209

The stellar (n,gamma) cross section of 62Ni  

E-Print Network (OSTI)

The 62Ni(n,gamma)63Ni(t_1/2=100+-2 yrs) reaction plays an important role in the control of the flow path of the slow neutron-capture (s-) nucleosynthesis process. We have measured for the first time the total cross section of this reaction for a quasi-Maxwellian (kT = 25 keV) neutron flux. The measurement was performed by fast-neutron activation, combined with accelerator mass spectrometry to detect directly the 63Ni product nuclei. The experimental value of 28.4+-2.8 mb, fairly consistent with a recent theoretical estimate, affects the calculated net yield of 62Ni itself and the whole distribution of nuclei with 62

210

Fr skulares Gleichgewicht gilt: bzw. Ai = iNi  

E-Print Network (OSTI)

Potts 1987 #12;Für säkulares Gleichgewicht gilt: 1N1 = 2N2 A1 = A2 bzw. Ai = iNi z. B. (230Th/238U

Siebel, Wolfgang

211

Thermal behavior simulation of Ni/MH battery  

Science Journals Connector (OSTI)

Thermal behavior of overcharged Ni/MH battery is studied with microcalorimeter. The battery is installed in a special device in ... Quantity of heat and heat capacity of the battery charged at different state of ...

DaHe Li; Kai Yang; Shi Chen; Feng Wu

2009-05-01T23:59:59.000Z

212

Electrodeposition of amorphous matrix Ni-W/Wp̳ composites  

E-Print Network (OSTI)

An amorphous Ni-W alloy matrix was incorporated with W particulate through two types of electrodeposition. The plating bath for the electrodeposition contained nickel sulfate, sodium tungstate, sodium citrate, ammonium ...

Jenket, Donald R. (Donald Robert)

2005-01-01T23:59:59.000Z

213

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices  

SciTech Connect

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy); Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio [University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

2014-02-21T23:59:59.000Z

214

Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells  

SciTech Connect

GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

2013-05-15T23:59:59.000Z

215

Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy  

Science Journals Connector (OSTI)

Time-resolved photoluminescence(TRPL) and positron annihilation measurements as well as Al0.23Ga0.77N/GaN heterostructuregrowth by metalorganic vapor phase epitaxy were carried out on very low defect density polar c-plane and nonpolar m-plane freestanding GaN (FS-GaN) substrates grown by hydride vapor phase epitaxy. Room-temperature photoluminescence(PL) lifetime for the near-band-edge (NBE) excitonic emission of the FS-GaN substrates increases with increasing positron diffusion length (L +); i.e. decreasing gross concentration of charged and neutral point defects and complexes. The best undoped c-plane FS-GaN exhibits record-long L + being 116?nm. The fast component of the PL lifetime for its NBE emission increases with temperature rise up to 100?K and levels off at approximately 1.1?ns. The result implies a saturation in thermal activation of nonradiative recombination centers. The surface and interface roughnesses for a Si-doped Al0.23Ga0.77N/GaN/Al0.18Ga0.82N/GaN heterostructure are improved by the use of FS-GaN substrates in comparison with the structure fabricated on a standard GaN template. The emission signals related to the recombination of a two-dimensional electron gas and excited holes are recognized for an Al0.23Ga0.77N/GaN single heterostructuregrown on the c-plane FS-GaN substrate.

S. F. Chichibu; K. Hazu; Y. Ishikawa; M. Tashiro; H. Namita; S. Nagao; K. Fujito; A. Uedono

2012-01-01T23:59:59.000Z

216

Polarization charges and polarization-induced barriers in AlxGa1xNGaN and InyGa1yNGaN heterostructures  

E-Print Network (OSTI)

N�GaN heterostructures L. Jia,a) E. T. Yu, D. Keogh, and P. M. Asbeck Department of Electrical and Computer EngineeringGa1 yN surrounded by n-GaN, capacitance­ voltage profiling studies combined with elementary will most likely require further improvements in p-type GaN conduc- tivity and fabrication of low-resistance

Yu, Edward T.

217

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta, GA Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA October 7, 2013 - 3:16pm Addthis Energy on My Mind / FUPWG / Atlanta, GA / May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta, Georgia Tuesday, May 2, 2006 5:00 - 6:30 Steering Committee meeting in the Danube Tigris Room 6:30 until... Networking dinner at the Marriott Wednesday, May 3, 2006 7:45 am Registration/Continental Breakfast 8:30 - 8:45 Welcome from Suzanne Sitherwood, SVP, Southern Operations, President, Atlanta Gas Light, Chattanooga Gas & Florida City Gas 8:45 - 9:00 FEMP Southeast Regional Office Welcome Traci Leath, FEMP 9:00 - 9:45 Washington Update David McAndrew, FEMP 9:45 - 10:15 Break - Networking 10:15 - 11:20 Navy Technical Program Update Paul Kistler, U.S. Navy

218

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780...

219

Lattice vibrations of pure and doped GaSe  

SciTech Connect

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

220

GaAs solar cells close to the thermodynamic limit  

Science Journals Connector (OSTI)

The efficiency of GaAs solar cells can be increased by applying angularly selective filters. It is shown in terms of detailed balance model, why this happens and the concept is proven...

Hoehn, Oliver; Kraus, Tobias; Bauhuis, Gerard; Schwarz, Ulrich T; Bläsi, Benedikt

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Modeling of InGaN/Si tandem solar cells  

Science Journals Connector (OSTI)

We investigate theoretically the characteristics of monolithic InGaN/Si two-junction series-connected solar cells using the air mass 1.5 global irradiance spectrum. The addition of an InGaN junction is found to produce significant increases in the energy conversion efficiency of the solar cell over that of one-junction Si cells. Even when Si is not of high quality such two-junction cells could achieve efficiencies high enough to be practically feasible. We also show that further though smaller improvements of the efficiency can be achieved by adding another junction to form an InGaN/InGaN/Si three-junction cell.

L. Hsu; W. Walukiewicz

2008-01-01T23:59:59.000Z

222

Exciton front propagation in photoexcited GaAs quantum wells  

E-Print Network (OSTI)

We report on the study of spatiotemporal self-organization of carriers in photoexcited GaAs quantum wells. Propagating interfaces between electron-rich and hole-rich regions are seen as expanding and collapsing exciton ...

Yang, Sen

223

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents (OSTI)

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

224

Homogeneous AlGaN/GaN superlattices grown on free-standing (1100) GaN substrates by plasma-assisted molecular beam epitaxy  

SciTech Connect

Two-dimensional and homogeneous growth of m-plane AlGaN by plasma-assisted molecular beam epitaxy has been realized on free-standing (1100) GaN substrates by implementing high metal-to-nitrogen (III/N) flux ratio. AlN island nucleation, often reported for m-plane AlGaN under nitrogen-rich growth conditions, is suppressed at high III/N flux ratio, highlighting the important role of growth kinetics for adatom incorporation. The homogeneity and microstructure of m-plane AlGaN/GaN superlattices are assessed via a combination of scanning transmission electron microscopy and high resolution transmission electron microscopy (TEM). The predominant defects identified in dark field TEM characterization are short basal plane stacking faults (SFs) bounded by either Frank-Shockley or Frank partial dislocations. In particular, the linear density of SFs is approximately 5 × 10{sup ?5} cm{sup ?1}, and the length of SFs is less than 15 nm.

Shao, Jiayi; Malis, Oana [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Zakharov, Dmitri N. [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States)] [Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973 (United States); Edmunds, Colin [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States)] [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, Michael J. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States) [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 49707 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 49707 (United States)

2013-12-02T23:59:59.000Z

225

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy  

Science Journals Connector (OSTI)

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular- ... (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as ... back surface field la...

Shulong Lu; Lian Ji; Wei He; Pan Dai; Hui Yang…

2011-10-01T23:59:59.000Z

226

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts  

SciTech Connect

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

2003-07-10T23:59:59.000Z

227

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network (OSTI)

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

228

The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers  

E-Print Network (OSTI)

have been operated in GaAs/AlGaAs and InP/InGaAsP mul- tiple quantum well MQW materials showed no evidence of mode-locked operation. Band-edge absorption spectra are also presented which

229

High-temperature phase stability and tribological properties of laser clad Mo{sub 2}Ni{sub 3}Si/NiSi metal silicide coatings  

SciTech Connect

Mo{sub 2}Ni{sub 3}Si/NiSi wear-resistant metal silicide composite coatings consisting of Mo{sub 2}Ni{sub 3}Si primary dendrite and interdendritic Mo{sub 2}Ni{sub 3}Si/NiSi eutectic were fabricated on substrate of an austenitic stainless steel AISI321 by laser cladding using Ni-Mo-Si elemental powder blends. The high-temperature structural stability of the coating was evaluated by aging at 800 deg. C for 1-50 h. High-temperature sliding wear resistance of the as-laser clad and aged coatings was evaluated at 600 deg. C. Results indicate that the Mo{sub 2}Ni{sub 3}Si/NiSi metal silicides coating has excellent high temperature phase stability. No phase transformation except the dissolution of the eutectic Mo{sub 2}Ni{sub 3}Si and the corresponding growth of the Mo{sub 2}Ni{sub 3}Si primary dendrite and no elemental diffusion from the coating into the substrate were detected after aging the coating at 800 deg. C for 50 h. Aging of the coating at 800 deg. C leads to gradual dissolution of the interdendritic eutectic Mo{sub 2}Ni{sub 3}Si and subsequent formation of a dual-phase structure with equiaxed Mo{sub 2}Ni{sub 3}Si primary grains distributed in the NiSi single-phase matrix. Because of the strong covalent-dominated atomic bonds and high volume fraction of the ternary metal silicide Mo{sub 2}Ni{sub 3}Si, both the original and the aged Mo{sub 2}Ni{sub 3}Si/NiSi coating has excellent wear resistance under pin-on-disc high-temperature sliding wear test conditions, although hardness of the aged coating is slightly lower than that of the as-clad coating.

Lu, X.D. [Laboratory of Laser Materials Processing and Surface Engineering, School of Materials Science and Engineering, Beihang University (China); Wang, H.M. [Laboratory of Laser Materials Processing and Surface Engineering, School of Materials Science and Engineering, Beihang University (China)]. E-mail: wanghuaming@263.net

2004-10-18T23:59:59.000Z

230

Shape memory behavior of ultrafine grained NiTi and TiNiPd shape memory alloys  

E-Print Network (OSTI)

The cyclic instability in shape memory characteristics of NiTi-based shape memory alloys (SMAs), such as transformation temperatures, transformation and irrecoverable strains and transformation hysteresis upon thermal and mechanical cycling limits...

Kockar, Benat

2009-05-15T23:59:59.000Z

231

The wetting behavior of NiAl and NiPtAl on polycrystalline alumina  

SciTech Connect

In order to understand the beneficial effect of Pt on the adherence of thermally grown alumina scales, sessile drop experiments were performed to study the wetting of poly-crystalline alumina by nickel-aluminum alloys with or without platinum addition where the amount of Pt ranged from 2.4 to 10 at.%. Subsequent interfacial structure was evaluated using atomic force microscopy. Platinum addition enhances the wettability of NiAl alloys on alumina, reduces the oxide/alloy interface energy and increases the interfacial mass transport rates.

Saiz, Eduardo; Gauffier, Antoine; Saiz, Eduardo; Tomsia, Antoni P.; Hou, Peggy Y.

2007-07-01T23:59:59.000Z

232

Electronic structure mechanism of spin-polarized electron transport in a NiC60Ni system  

E-Print Network (OSTI)

between Ni leads. The tunnel current has a much higher magnitude when Ni is bonded to hole sites (H6, H5) than at bridge sites (B66, B56) of the fullerene cage. Furthermore, the magnitude of junction. For example, the B66 site is the bridge site over a C@C double bond, the B56 site is the bridge site over a C

Pandey, Ravi

233

Sol-gel-derived NiO/NiAl{sub 2}O{sub 4} oxygen carriers for chemical-looping combustion by coal char  

SciTech Connect

This paper focuses on the investigation of Ni-based oxygen carriers for CLC by coal char. First, Al(OC{sub 3}H{sub 7}){sub 3} and Ni(NO{sub 3}){sub 2} are selected as the main raw materials to prepare sol-gel-derived NiO/NiAl{sub 2}O{sub 4} oxygen carriers. The oxygen carrier with a mass content of 60% NiO, a sintering temperature of 1300{sup o}C, and a sintering time of 6 h performs comparatively well. Second, the reduction reaction of the NiO/NiAl{sub 2}O{sub 4} oxygen carriers with char and the circular reduction/oxidation reactions of the NiO/NiAl{sub 2}O{sub 4} oxygen carriers with char/air or hydrogen/air are carried out in a thermogravimetric analysis (TGA) instrument to investigate the reactivities and chemical life of the prepared NiO/NiAl{sub 2}O{sub 4} oxygen carriers. The experimental results show that (a) when the TGA temperature is higher than 850{sup o}C, NiO/NiAl{sub 2}O{sub 4} starts to react with coal char rapidly, which indicates that CLC of coal char using NiO/NiAl{sub 2}O{sub 4} as oxygen carriers is a feasible technology of energy utilization in principle; (b) NiO/NiAl{sub 2}O{sub 4}, which maintains its activity over single-cycle reduction/oxidation reactions with char/air or multiple-cycle reduction/oxidation reactions with hydrogen/air, exhibits extremely good recyclablity; (c) the porous beehive structure of the NiO/NiAl{sub 2}O{sub 4} particle is maintained, and the sintering behavior between different particles is not observed during cyclic studies. Those experimental results prove the sol-gel-derived oxygen carrier NiO/NiAl{sub 2}O{sub 4} is capable of being used in chemical-looping combustion fueled by coal char or H{sub 2}. 51 refs., 5 figs., 5 tabs.

Haibo Zhao; Liming Liu; Baowen Wang; Di Xu; Linlin Jiang; Chuguang Zheng [Huazhong University of Science and Technology, Wuhan (China). State Key Laboratory of Coal Combustion

2008-03-15T23:59:59.000Z

234

Electronic properties of the Ga vacancy in GaP(110) surfaces determined by scanning tunneling microscopy  

Science Journals Connector (OSTI)

The electronic properties of uncharged Ga monovacancies in GaP(110) surfaces are determined from voltage-dependent scanning tunneling microscopy images. The signatures of localized defect states in the band gap are analyzed and their spatial location is determined. Empty and occupied defect states exist. Depressed dangling bonds in the occupied-state images indicate an inward relaxation of the neighboring P atoms. The results agree with recent theoretical work.

Ph. Ebert and K. Urban

1998-07-15T23:59:59.000Z

235

Microscopic identification of the compensation mechanisms in Si-doped GaAs  

Science Journals Connector (OSTI)

The compensation mechanisms of SiGa donors in GaAs are determined by scanning tunneling microscopy. With increasing Si concentration the SiGa donors are consecutively electrically deactivated by SiAs acceptors, Si clusters, and SiGa-Ga-vacancy complexes. A microscopic model based on the screened Coulomb interaction between charged dopants, the amphoteric nature of Si, and the Fermi-level effect is proposed. It explains the observed defects, the critical Si concentrations of each identified mechanism, and predicts the solubility limit of Si in GaAs. © 1996 The American Physical Society.

C. Domke, Ph. Ebert, M. Heinrich, and K. Urban

1996-10-15T23:59:59.000Z

236

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network (OSTI)

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

237

Modified Ni-Cu catalysts for ethanol steam reforming  

SciTech Connect

Three Ni-Cu catalysts, having different Cu content, supported on ?-alumina were synthesized by wet co-impregnation method, characterized and tested in the ethanol steam reforming (ESR) reaction. The catalysts were characterized for determination of: total surface area and porosity (N{sub 2} adsorption - desorption using BET and Dollimer Heal methods), Ni surface area (hydrogen chemisorption), crystallinity and Ni crystallites size (X-Ray Diffraction), type of catalytic active centers (Hydrogen Temperature Programmed Reduction). Total surface area and Ni crystallites size are not significantly influenced by the addition of Cu, while Ni surface area is drastically diminished by increasing of Cu concentration. Steam reforming experiments were performed at atmospheric pressure, temperature range 150-350°C, and ethanol - water molar ration of 1 at 30, using Ar as carrier gas. Ethanol conversion and hydrogen production increase by the addition of Cu. At 350°C there is a direct connection between hydrogen production and Cu concentration. Catalysts deactivation in 24h time on stream was studied by Transmission Electron Microscopy (TEM) and temperature-programmed reduction (TPR) on used catalysts. Coke deposition was observed at all studied temperatures; at 150°C amorphous carbon was evidenced, while at 350°C crystalline, filamentous carbon is formed.

Dan, M.; Mihet, M.; Almasan, V.; Borodi, G. [National Institute for Research and Development of Isotopic and Molecular Technologies, 65-103 Donath Street, 400293, Cluj-Napoca (Romania)] [National Institute for Research and Development of Isotopic and Molecular Technologies, 65-103 Donath Street, 400293, Cluj-Napoca (Romania); Katona, G.; Muresan, L. [Univ. Babes Bolyai, Fac. Chem. and Chem. Eng.,11 Arany Janos, 400028, Cluj-Napoca (Romania)] [Univ. Babes Bolyai, Fac. Chem. and Chem. Eng.,11 Arany Janos, 400028, Cluj-Napoca (Romania); Lazar, M. D., E-mail: diana.lazar@itim-cj.ro [65-103 Donath Street (Romania)

2013-11-13T23:59:59.000Z

238

Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer  

SciTech Connect

Time-dependent responses of drain current (I{sub d}) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances I{sub d} by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10{sup 12} cm{sup ?2}. When UV light is turned off at 300 K, a part of increased I{sub d} decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of I{sub d} at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light.

Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Sakaki, H. [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan); Kachi, T. [Toyota Central R and D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Sugimoto, M. [Toyota Motor Corporation, 543 Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309 (Japan)

2013-12-04T23:59:59.000Z

239

Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well  

E-Print Network (OSTI)

Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico, New Mexico 87545 Received 26 February 2007; accepted 1 June 2007; published online 28 June 2007 intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

Jalali. Bahram

240

Growth of Core?Shell Ga?GaN Nanostructures via a Conventional Reflux Method and the Formation of Hollow GaN Spheres  

Science Journals Connector (OSTI)

Gallium nitride (GaN) is an important III?V semiconductor with a wide direct band gap of ?3.4 eV. ... LiHMDS exhibits good solubility in TOA. ... The products were collected by centrifugation twice at 7000 rpm for 2 min in hexane, isopropanol, ethanol, and then deionized water. ...

Tz-Jun Kuo; Chi-Liang Kuo; Chun-Hong Kuo; Michael H. Huang

2009-02-05T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Maskless lateral epitaxial overgrowth of GaN on sapphire  

SciTech Connect

The authors demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed maskless LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 {micro}m) GaN layer on sapphire is selectively dry etched, leaving {approximately} 5 {micro}m-wide stripe mesas oriented in the <10{bar 1}0>{sub GaN} direction, with a 20 {micro}m period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a T, or overhang, morphology. As for LEO over an SiO{sub 2} mask, significant defect reduction (from {approximately} 10{sup 9} cm{sup {minus}2} to {approximately} 10{sup 6} cm{sup {minus}2}) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle ({approximately} 0.4--0.5{degree}) is relatively independent of growth temperature and wing aspect ratio.

Fini, P.; Marchand, H.; Ibbetson, J.P.; Moran, B.; Zhao, L.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.

1999-07-01T23:59:59.000Z

242

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions  

E-Print Network (OSTI)

We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity ...

Hisaka, Takayuki

243

Site-controlled fabrication of Ga nanodroplets by focused ion beam  

SciTech Connect

Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

Xu, Xingliang; Wang, Zhiming M., E-mail: zhmwang@gmail.com [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Wu, Jiang; Li, Handong; Zhou, Zhihua [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Wang, Xiaodong [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2014-03-31T23:59:59.000Z

244

Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN  

E-Print Network (OSTI)

. Hasama, "Subpicosecond saturation of intersubband absorption in (CdS/ZnSe)/BeTe quantum well waveguides. Cho, "Intersubband absorption at ~ 1.55 m in well- and modulation-doped GaN/AlGaN multiple quantum

245

Atomic-Level Study of Melting Behavior of GaN Nanotubes. | EMSL  

NLE Websites -- All DOE Office Websites (Extended Search)

Melting Behavior of GaN Nanotubes. Atomic-Level Study of Melting Behavior of GaN Nanotubes. Abstract: Molecular dynamics simulations with a Stillinger-Weber potential have been...

246

Electric field engineering in GaN high electron mobility transistors  

E-Print Network (OSTI)

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

247

Device-level thermal analysis of GaN-based electronics  

E-Print Network (OSTI)

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

Bagnall, Kevin Robert

2013-01-01T23:59:59.000Z

248

Bimetallic Fe-Ni Oxygen Carriers for Chemical Looping Combustion  

SciTech Connect

The relative abundance, low cost, and low toxicity of iron make Fe-based oxygen carriers of great interest for chemical looping combustion (CLC), an emerging technology for clean and efficient combustion of fossil and renewable fuels. However, Fe also shows much lower reactivity than other metals (such as Ni and Cu). Here, we demonstrate strong improvement of Fe-based carriers by alloying the metal phase with Ni. Through a combination of carrier synthesis and characterization with thermogravimetric and fixed-bed reactor studies, we demonstrate that the addition of Ni results in a significant enhancement in activity as well as an increase in selectivity for total oxidation. Furthermore, comparing alumina and ceria as support materials highlights the fact that reducible supports can result in a strong increase in oxygen carrier utilization.

Bhavsar, Saurabh; Veser, Goetz

2013-11-06T23:59:59.000Z

249

Superconductivity in SrNi2P2 single crystals  

SciTech Connect

Heat capacity, magnetic susceptibility, and resistivity of SrNi{sub 2}P{sub 2} single crystals are presented, illustrating the structural transition at 325 K, and bulk superconductivity at 1.4 K. The magnitude of {Tc}, fits to the heat capacity data, the small upper critical field H{sub c2} = 390 Oe, and {kappa} = 2.1 suggests a conventional fully gapped superconductor. With applied pressure we find that superconductivity persists into the so-called 'collapsed tetragonal' phase, although the transition temperature is monotonically suppressed with increasing pressure. This argues that reduced dimensionality can be a mechanism for increasing the transition temperatures of layered NiP, as well as layered FeAs and NiAs, superconductors.

Ronning, Filip [Los Alamos National Laboratory; Bauer, Eric D [Los Alamos National Laboratory; Park, Tuscon [Los Alamos National Laboratory; Thompson, Joe D [Los Alamos National Laboratory

2009-01-01T23:59:59.000Z

250

Structural ordering and interface morphology in symmetrically strained(GaIn)As/Ga(PAs) superlattices grown on off-oriented GaAs(100)  

Science Journals Connector (OSTI)

In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. The multilayers were grown by metalorganic vapor-phase epitaxy on (001) GaAs substrates intentionally off-oriented towards one of the nearest ?110? directions. High-resolution triple-crystal reciprocal-space maps recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction clearly show a double periodicity of the x-ray peak intensity that can be ascribed to a lateral and a vertical periodicity occurring parallel and perpendicular to the growth surface. Moreover, from the intensity modulation of the satellite peaks, a lateral-strain gradient within the epilayer unit cell is found, varying from a tensile to a compressive strain. Thus, the substrate off-orientation promotes a lateral modulation of the layer thickness (ordered interface roughness) and of the lattice strain, giving rise to laterally ordered macrosteps. In this respect, contour maps of the specular reflected beam in the vicinity of the (000) reciprocal lattice point were recorded in order to inspect the vertical and lateral interface roughness correlation. A semiquantitative analysis of our results shows that the interface morphology and roughness is greatly influenced by the off-orientation angle and the lateral strain distribution. Two mean spatial wavelengths can be determined, one corresponding exactly to the macrostep periodicity and the other indicating a further interface waviness along the macrosteps. The same spatial periodicities were found on the surface by atomic-force-microscopy images confirming the x-ray results and revealing a strong vertical correlation of the interfaces up to the outer surface.

C. Giannini; L. Tapfer; Y. Zhuang; L. De Caro; T. Marschner; W. Stolz

1997-02-15T23:59:59.000Z

251

THERMAL STUDY OF A GaN-BASED HEMT A Dissertation  

E-Print Network (OSTI)

of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) under bias conditions. An experimental

Sen, Mihir

252

Substrate-dependent wetting layer formation during GaN growth: Impact on the morphology of the films  

SciTech Connect

We have compared epitaxial growth of GaN films on 6H-SiC(0001)-({radical}(3)x{radical}(3))R30 deg. -Ga and on (0001)-sapphire. Predeposited Ga layers were nitrided by ion beam assisted molecular beam epitaxy. Whereas on SiC the initially deposited Ga covers the substrate surface completely, on sapphire only Ga droplets are present. The different distribution of the predeposited Ga affects the morphology of GaN significantly. Scanning electron microscopy and atomic force microscopy analysis of the grown films show that the complete wetting of the SiC substrate with Ga enhances finally the size and the flatness of GaN terraces and thus the quality of the film. X-ray photoelectron spectroscopy measurements reveal that metallic Ga resides also on top of the GaN films during the growth.

Sidorenko, A.; Peisert, H.; Neumann, H.; Chasse, T. [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany); Leibniz-Institut fuer Oberflaechenmodifizierung e.V. Permoserstrasse 15, D-04318 Leipzig (Germany); Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany)

2007-08-15T23:59:59.000Z

253

Effect of nickel loading on the activity of Ni/ZrO2 for methane steam reforming at low temperature  

Science Journals Connector (OSTI)

The effect of Ni loading on the catalytic activity of Ni/ZrO2 catalyst for methane steam reforming was investigated. The sample containing 15 wt...

Long Q. Nguyen; Leonila C. Abella…

2008-04-01T23:59:59.000Z

254

Effect of Aging Heat Treatments on Ni52Ti48 Shape Memory Alloy  

E-Print Network (OSTI)

Ni-rich NiTi shape memory alloys (SMAs) are capable of attaining a wide range of transformation temperatures depending on the heat treatment conditions and superior thermo-mechanical cycling stability, which are desired for repeated solid...

Akin, Erhan

2011-10-21T23:59:59.000Z

255

SciTech Connect: Neutron Scattering of CeNi at the SNS-ORNL:...  

NLE Websites -- All DOE Office Websites (Extended Search)

Conference: Neutron Scattering of CeNi at the SNS-ORNL: A Preliminary Report Citation Details In-Document Search Title: Neutron Scattering of CeNi at the SNS-ORNL: A Preliminary...

256

Textural Characterization of Pilc Montmorillonite Pillared with Binary Oxides LaNiOx  

Science Journals Connector (OSTI)

Montmorillonite pillared clay was synthesized by intercalation of binuclear complex of the form NiLa(fsaen)NO3 and subsequent calcination at 500°C. The binary oxides of the form NiLaOx thus created inside the lay...

S. P. Skaribas; P. J. Pomonis; P. Grange…

1993-01-01T23:59:59.000Z

257

E-Print Network 3.0 - alloy fracture cu-ni Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

fracture cu-ni Search Powered by Explorit Topic List Advanced Search Sample search results for: alloy fracture cu-ni Page: << < 1 2 3 4 5 > >> 1 Ris-R-1276(EN) Final Report...

258

X-ray absorption spectroscopy at the Ni-K edge in Stackhousia tryonii Bailey hyperaccumulator  

E-Print Network (OSTI)

X-ray absorption spectroscopy at the Ni–K edge inin vivo by micro x-ray absorption spectroscopy (XAS) at theNi–K edge. Both x-ray absorption near edge structure and

Kachenko, A.

2009-01-01T23:59:59.000Z

259

Piezospectroscopic study of substitutional Ni in ZnO  

SciTech Connect

The effect of uniaxial stress on the electronic {sup 3}T{sub 1}(F)?{sup 3}T{sub 2}(F) transitions of Ni{sup 2+} in ZnO at 4216, 4240, and 4247 cm{sup ?1} is investigated by means of Fourier transform IR absorption spectroscopy. A stress Hamiltonian is constructed which accounts for the behavior of these transitions under uniaxial stress. It is shown that the split pattern and polarization properties of these IR absorption lines are consistent with a dynamic Jahn-Teller effect in the {sup 3}T{sub 2}(F) state of Ni.

Lavrov, E. V.; Herklotz, F. [Technische Universität Dresden, 01062 Dresden (Germany); Kutin, Y. S. [Kazan Federal University, Federal Center of Shared Facilities, 420008 Kazan (Russian Federation)

2014-02-21T23:59:59.000Z

260

Doping and isolation of GaN, InGaN and InAlN using ion implantation  

SciTech Connect

Both n- and p-type doping have been achieved in GaN using Si{sup +} or Mg{sup +}/P{sup +} implantation, respectively, followed annealing at {ge} 1050{degrees}C. Using proximity rapid thermal annealing (10sec) the GaN surface retains both smooth morphology and its original stoichiometry. Variable temperature Hall measurements reveal approximate energy levels of 62meV for the implanted Si and 171meV for the Mg, which are similar to their values in epitaxially grown GaN. Implant isolation of both n- and p-type GaN, and n-type In{sub 0.75}Al{sub 0.25}N with multiple energy inert species (e.g. N{sup +} or F{sup +}) produces high resistivity ({ge}10{sup 8}{omega}/{open_square}) after subsequent annealing in the range 600-700{degrees}C. Smaller increases in sheet resistance are observed for In{sub x}Ga{sup 1-x}N (x=0.33-0.75) under the same conditions due to the smaller energy bandgaps and the shallower energy levels of the damage-related states controlling the resistivity.

Pearton, S.J.; Vartuli, C.B.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States)] [and others

1995-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design  

SciTech Connect

The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

2000-04-25T23:59:59.000Z

262

Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer  

SciTech Connect

We report a first principles theoretical investigation of spin polarized quantum transport in Mn{sub 2}Ga/MgO/Mn{sub 2}Ga and Mn{sub 3}Ga/MgO/Mn{sub 3}Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn{sub 2}Ga-based MTJs, however, only a 5% TMR ratio for Mn{sub 3}Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn{sub 2}Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn{sub 2}Ga/MgO/Mn{sub 2}Ga MTJ can be improved by inserting Co layer.

Liang, S. H.; Tao, L. L.; Liu, D. P., E-mail: dpliu@iphy.ac.cn; Han, X. F., E-mail: xfhan@iphy.ac.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu, Y. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Université, BP 239, 54506 Vandoeuvre (France)

2014-04-07T23:59:59.000Z

263

Novel photoaffinity ligands for the GA-receptor  

SciTech Connect

Previous studies from this laboratory have shown that certain N-substituted phthalimides (NSPs) exhibit GA-like activity in a range of specific bioassays and that bioactive NSPs compete with ({sup 3}H)-GA{sub 4} for soluble binding sites in cucumber homogenates. As such, these compounds may prove useful in the purification and characterization of GA receptor proteins. To this end, five azido-NSPs have been synthesized and are currently being screened for biological activity and photochemical stability. Three azido-NSPs elicit {alpha}-amylase production in barley half-seeds and stimulate tissue elongation in d{sub 5} maize, lettuce, sunflower, and soybean. Further evaluations are in progress and these data as well as the utility of these compounds as photo-affinity ligands will be discussed.

Suttle, J.C.; Hultstrand, J.F.; Tanaka, F.S. (USDA/ARS Biosciences Research Laboratory, Fargo, ND (USA))

1990-05-01T23:59:59.000Z

264

The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.  

SciTech Connect

Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

2012-03-01T23:59:59.000Z

265

Invited Paper GaAs/A1O photonic bandgap material fabrication and characterization  

E-Print Network (OSTI)

semiconductor crystals, photonic crystals do not occur naturally. There are, therefore, several seemingly direct bandgap semiconductors, such as GaAs, A1GaAs, InP, InGaAsP, etc., in which the radiative-dimensional photonic bandgaps for microwave and millimeter-wave radiation, and for shorter optical wavelengths in one

Zhou, Weidong

266

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a  

E-Print Network (OSTI)

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a , Guohua Li b , Jerry MP photodiodes fabricated on GaP substrate with unique drift dominated design, which can build an electric field throughout the active region by varying the doping concentration. The InP/GaP photodiodes have been grown

Woodall, Jerry M.

267

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network (OSTI)

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

268

Free carrier induced spectral shift for GaAs filled metallic hole arrays  

E-Print Network (OSTI)

. Soref, and J. A. D. Alamo, "Carrier-induced change in refractive index of InP, GaAs, and InGaAsP," IEEE-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave

New Mexico, University of

269

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy  

E-Print Network (OSTI)

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy A. J. Ptak, L. J-assisted molecular-beam epitaxy to study the dependence of oxygen incorporation on polarity and oxygen partial pressure. Oxygen incorporates at a rate ten times faster on nitrogen-polar GaN than on the Ga polarity

Myers, Tom

270

Kinetics of Mixed Ni-Al Precipitate Formation on a Soil Clay Fraction  

E-Print Network (OSTI)

Kinetics of Mixed Ni-Al Precipitate Formation on a Soil Clay Fraction D A R R Y L R . R O B E R Management Laboratory, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland The kinetics of mixed Ni-Al Ni- Al LDH formation. The initial Ni concentration was 3 mM with a solid/solution ratio of 10 g L-1

Sparks, Donald L.

271

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

GENERAL ATOMICS GENERAL ATOMICS HOT CELL FACILITY DECONTAMINATION & DECOMMISSIONING PROJECT FINAL PROJECT CLOSEOUT REPORT prepared for GA HOT CELL D&D PROJECT CONTRACT NUMBERS DE-AC03-84SF11962 and DE-AC03-95SF20798 PBS VL-GA-0012 Approvals Prepared by: James Davis, III Date Project Manager, Oakland Environmental Programs Office Reviewed by: John Lee Date Deputy, Oakland Environmental Programs Office Approved by: Laurence McEwen Date Acting Director, Oakland Environmental Programs Office General Atomics Hot Cell Facility D&D Project Closeout Report Contents Page i CONTENTS CONTENTS.....................................................................................................................................

272

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

273

Surface morphology and magnetic anisotropy in (Ga,Mn)As  

E-Print Network (OSTI)

Atomic Force Microscopy and Grazing incidence X-ray diffraction measurements have revealed the presence of ripples aligned along the $[1\\bar{1}0]$ direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers, with periodicity of about 50 nm in all samples that have been studied. These samples show the strong symmetry breaking uniaxial magnetic anisotropy normally observed in such materials. We observe a clear correlation between the amplitude of the surface ripples and the strength of the uniaxial magnetic anisotropy component suggesting that these ripples might be the source of such anisotropy.

S. Piano; X. Marti; A. W. Rushforth; K. W. Edmonds; R. P. Campion; O. Caha; T. U. Schulli; V. Holy; B. L. Gallagher

2010-10-01T23:59:59.000Z

274

Operating experience with a GaAs photoemission electron source  

SciTech Connect

We report on the development of several operating procedures that promise to make GaAs photoemission electron sources easier to construct, more reliable to operate, and more amenable to use in dynamic vacuum systems. We describe in particular a method for ''ohmically'' heating a <100> crystal of GaAs under vacuum to approximately 600 /sup 0/C. We also discuss our observations of the role of oxygen in the activation of the crystal surface, the use of continuous cesiation, and of the performance of the crystal under varying vacuum conditions.

Tang, F.C.; Lubell, M.S.; Rubin, K.; Vasilakis, A.; Eminyan, M.; Slevin, J.

1986-12-01T23:59:59.000Z

275

An investigation on reliable passivation of GaP  

E-Print Network (OSTI)

reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index... reports the results of a study of sputtered Silicon Nitride 3N4) and Anodic Oxide as passivating techniques for Gallium Phosphide. Anodic Oxide was grown on GaP by anodizing the semiconductor in 30% hydrogen peroxide. The resulting oxide had an index...

Greaves King, Carlos A.

2012-06-07T23:59:59.000Z

276

Interband transitions in molecular?beam?epitaxial Al x Ga1?x As/GaAs  

Science Journals Connector (OSTI)

Interband transition energies for Al x Ga1?x As layers grown by molecular?beam epitaxy(MBE) techniques have been determined using the electrolyte electroreflectance (EER) technique. The observed data fit quadratic relations for E 0 E 0+?0 E 1 and E 1+?1 to describe variations of energy with composition. Although the x values were not accurately known the internal consistency of the data is excellent. Given a single bowing parameter we show that accurate values of x can be determined. The EER technique can provide x values with an accuracy better than 0.02 and information on changes in x as small as 0.002. It is thus ideally suited for studying MBE materials.

J. L. Aubel; U. K. Reddy; S. Sundaram; W. T. Beard; James Comas

1985-01-01T23:59:59.000Z

277

INVESTIGATION OF NOVEL ALLOY TiC-Ni-Ni3Al FOR SOLID OXIDE FUEL CELL INTERCONNECT APPLICATIONS  

SciTech Connect

Solid oxide fuel cell interconnect materials must meet stringent requirements. Such interconnects must operate at temperatures approaching 800 C while resisting oxidation and reduction, which can occur from the anode and cathode materials and the operating environment. They also must retain their electrical conductivity under these conditions and possess compatible coefficients of thermal expansion as the anode and cathode. Results are presented in this report for fuel cell interconnect candidate materials currently under investigation based upon nano-size titanium carbide (TiC) powders. The TiC is liquid phase sintered with either nickel (Ni) or nickel-aluminide (Ni{sub 3}Al) in varying concentrations. The oxidation resistance of the submicron grain TiC-metal materials is presented as a function weight change versus time at 700 C and 800 C for varying content of metal/intermetallic in the system. Electrical conductivity at 800 C as a function of time is also presented for TiC-Ni to demonstrate the vitality of these materials for interconnect applications. TGA studies showed that the weight gain was 0.8 mg/cm{sup 2} for TiC(30)-Ni(30wt.%) after 100 hours in wet air at 800 C and the weight gain was calculated to be 0.5205 mg/cm{sup 2} for TiC(30)- Ni(10 wt.%) after 100 hours at 700 C and 100 hours at 800 C. At room temperature the electrical conductivity was measured to be 2444 1/[ohm.cm] for TiC-Ni compositions. The electrical conductivities at 800 C in air was recorded to be 19 1/[ohm.cm] after 125 hours. Two identical samples were supplied to PNNL (Dr. Jeff Stevenson) for ASR testing during the pre-decision period and currently they are being tested there. Fabrication, oxidation resistance and electrical conductivity studies indicate that TiC-Ni-Ni{sub 3}Al ternary appears to be a very important system for the development of interconnect composition for solid oxide fuel cells.

Rasit Koc; Geoffrey Swift; Hua Xie

2005-01-25T23:59:59.000Z

278

Oxygen Reduction Activity of PtxNi1-x Alloy Nanoparticles on Multiwall Carbon Nanotubes  

E-Print Network (OSTI)

PtxNi1 - x nanoparticles (Pt:Ni; 1:0, 4:1, 3:1 and 0.7:1) of ~5 nm, were synthesized on carboxylic acid-functionalized multiwall carbon nanotubes (PtxNi1 - x NPs/MWNT). The oxygen reduction reaction (ORR) activity measurements ...

Kim, Junhyung

279

Vacancy-Vacancy Interactions in NiAl Matthew O. Zacate and Gary S. Collins  

E-Print Network (OSTI)

Vacancy-Vacancy Interactions in NiAl Matthew O. Zacate and Gary S. Collins Department of Physics, Washington State University, Pullman, WA 99164, USA Keywords: point defect, vacancy, defect interaction, intermetallic compound, perturbed angular correlation, PAC, NiAl Abstract. Interactions between Ni vacancies

Collins, Gary S.

280

Ultralow damage depth by electron cyclotron resonance plasma etching of GaAs/InGaAs quantum wells  

Science Journals Connector (OSTI)

Dry etch induced damage of GaAs/InGaAs/GaAs heterostructures in an electron cyclotron resonance (ECR) argon discharge has been investigated as a function of additional radio frequency self?biasing of the sample and process pressure in argon ECR discharges. We used depth resolved photoluminescence measurements to determine the influence of the etch process on the samples. We observe a decreasing damage depth for smaller bias voltages reaching its lowest value of 1.7 nm at 20 V bias and a pressure of 0.15 Pa. For lower pressures we observe a strong increase of the damage which is attributed predominantly to high energetic vacuum ultraviolet radiation from the ECR region.

T. Bickl; B. Jacobs; J. Straka; A. Forchel

1993-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration  

SciTech Connect

We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

Young, N. G., E-mail: ngyoung@engineering.ucsb.edu; Farrell, R. M.; Iza, M.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Perl, E. E.; Keller, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Bowers, J. E.; Nakamura, S.; DenBaars, S. P. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2014-04-21T23:59:59.000Z

282

Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures  

SciTech Connect

We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko [Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan); Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel [National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101 (Philippines); Garcia, Alipio [Department of Physical Sciences, University of the Philippines, Baguio City 2600 (Philippines)

2009-06-08T23:59:59.000Z

283

Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy  

Science Journals Connector (OSTI)

The mechanisms of Ga-assisted GaAs nanowires grown by molecular beam epitaxy are addressed. The axial and radial growth rates as a function of the Ga rate and As pressure indicate that on the opposite of what is observed in thin film epitaxy, the growth rate of the nanowires is arsenic limited. As a consequence, the axial growth rate of the wires can be controlled by the As4 pressure. Additionally, due to the small As4 pressure leading to nanowire growth, the deposition on the facets is very slow, leading to a much lower radial growth rate. Finally, we present a model that is able to accurately describe the presented observations and predicts a maximum length of nontapered nanowires of 40?m.

C. Colombo; D. Spirkoska; M. Frimmer; G. Abstreiter; A. Fontcuberta i Morral

2008-04-28T23:59:59.000Z

284

Carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well structures  

Science Journals Connector (OSTI)

The carrier effective masses in symmetrically strained (GaIn)As/Ga(PAs) multiple-quantum-well heterostructures have been determined as a function of the incorporated compressive strain in the (GaIn)As quantum-well layer by applying magneto-optical studies. The precise structural parameters, i.e., individual layer thicknesses, strain values, and crystalline perfection, have been determined independently by high-resolution x-ray diffraction and transmission electron microscopy. By analyzing both the allowed and forbidden optical transitions as a function of the magnetic field, detected by polarization-dependent magnetophotoluminescence excitation spectroscopy, the exciton binding energy as well as the effective in-plane electron and heavy-hole masses have been determined quantitatively as a function of strain. The theoretically predicted significant decrease of the in-plane heavy-hole mass with increasing strain has been observed. The obtained results are discussed and compared with the contradictory results reported in the literature.

M. Volk; S. Lutgen; T. Marschner; W. Stolz; E. O. Göbel; P. C. M. Christianen; J. C. Maan

1995-10-15T23:59:59.000Z

285

Determination of subband energies and 2DEG characteristics of Al{sub x}Ga{sub 1?x}N/GaN heterojunctions using variational method  

SciTech Connect

A physics-based model based on the variational method for analyzing the two dimensional electron gas (2DEG) characteristics of polar AlGaN/GaN heterojunctions is developed. The 2DEG carrier concentration, the first and second energy subbands, and the position of the Fermi energy level are calculated for various barrier thicknesses, Al mole fractions, background dopant concentrations, and gate voltages for gated AlGaN/GaN heterojunctions. The results are in good agreement with the data reported based on self-consistent method. Whereas the aforementioned report has dealt with specific values of Al mole fraction, barrier thickness, and unintentional doping level, the present work provides a basis for calculating the 2DEG characteristics for the full range of these parameters. Furthermore, according to the proposed model, the applicability of the triangular approximation of the quantum well in AlGaN/GaN heterojunctions is evaluated.

Manouchehri, Farzin; Valizadeh, Pouya; Kabir, M. Z., E-mail: kabir@encs.concordia.ca [Department of Electrical and Computer Engineering, Concordia University, Montreal, H3G 1M8 (Canada)

2014-03-15T23:59:59.000Z

286

InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy  

SciTech Connect

We investigate axial GaAs/InGaAs/GaAs heterostructures embedded in GaAs nanopillars via catalyst-free selective-area metal-organic chemical vapor deposition. Structural characterization by transmission electron microscopy with energy dispersive x-ray spectroscopy (EDS) indicates formation of axial In{sub x}Ga{sub 1-x}As (x{approx}0.20) inserts with thicknesses from 36 to 220 nm with {+-}10% variation and graded Ga:In transitions controlled by In segregation. Using the heterointerfaces as markers, the vertical growth rate is determined to increase linearly during growth. Photoluminescence from 77 to 290 K and EDS suggest the presence of strain in the shortest inserts. This capability to control the formation of axial nanopillar heterostructures is crucial for optimized device integration.

Shapiro, J. N.; Lin, A.; Wong, P. S.; Scofield, A. C.; Tu, C.; Senanayake, P. N.; Mariani, G.; Liang, B. L.; Huffaker, D. L. [Department of Electrical Engineering and California Nano-Systems Institute, University of California at Los Angeles, Los Angeles, California 90095 (United States)

2010-12-13T23:59:59.000Z

287

Thickness Effect of Al-Doped ZnO Window Layer on Damp Heat Stability of CuInGaSe2 Solar Cells: Preprint  

SciTech Connect

We investigated the damp heat (DH) stability of CuInGaSe2 (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 ?m to a modest 0.50 ?m over an underlying 0.10-?m intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 ?m/3 ?m) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85oC and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

2011-07-01T23:59:59.000Z

288

Thickness Effect of Al-Doped ZnO Window Layer on Damp-Heat Stability of CuInGaSe2 Solar Cells  

SciTech Connect

We investigated the damp heat (DH) stability of CuInGaSe{sub 2} (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 {micro}m to a modest 0.50 {micro}m over an underlying 0.10-{micro}m intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 {micro}m/3 {micro}m) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85 C and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

2011-01-01T23:59:59.000Z

289

Monopole resonance strengths in Ni-58 and Pb-208  

E-Print Network (OSTI)

Giant monopole resonance strengths were obtained from small angle inelastic alpha scattering on Ni-58 and Pb-208 using deformed potential and folding models. Folding model analyses increase the sum rule strength in both nuclei, with 160% of the E0...

Youngblood, David H.

1997-01-01T23:59:59.000Z

290

Precipitation in 9Ni-12Cr-2Cu maraging steels  

SciTech Connect

Two maraging steels with the compositions 9Ni-12Cr-2Cu-4Mo (wt%) and 9Ni-12Cr-2Cu and with small additions of Al and Ti were investigated using atom probe field ion microscopy. Tomographic atom probe investigations were performed to clarify the spatial distribution of elements in and close to the precipitates. Materials heat treated at 475 C for 5, 25 min, 1, 2, 4 and 400 h were analyzed. Precipitates in the Mo-rich material were observed already after 5 min of aging, while in the material without MO, precipitation started later. In both materials precipitation begins with the formation of Cu-rich particles which work as nucleation sites for a Ni-rich phase of type Ni{sub 3}(Ti,Al). A Mo-rich phase was detected in the Mo-rich steel after 2 h of aging. The distribution of alloying elements in the precipitates, their role in the precipitation process, and the mechanism of hardening in the two materials are discussed.

Stiller, K.; Haettestrand, M. [Chalmers Univ. of Technology, Goeteborg (Sweden). Dept. of Physics] [Chalmers Univ. of Technology, Goeteborg (Sweden). Dept. of Physics; Danoix, F. [Univ. de Rouen, Mont Saint Aignan (France). Lab. de Microscopie Ionique] [Univ. de Rouen, Mont Saint Aignan (France). Lab. de Microscopie Ionique

1998-11-02T23:59:59.000Z

291

Metal-to-Semiconductor Transition in Hexagonal NiS  

Science Journals Connector (OSTI)

Recent electrical resistivity measurements have shown that the hexagonal form of stoichiometric NiS exhibits an abrupt metal-to-semiconductor transition at 264°K. Neutron diffraction studies have shown that a first-order paramagnetic-to-antiferromagnetic transition also occurs at 264°K. No crystal lattice distortion is observed at the transition nor detected at 4.2°K, suggesting that this may be a transition of the kind considered by Adler and Brooks. The measured magnetic moment at 4.2°K is 1.66±0.08 ?? and at 260°K it is 150.±0.10 ?? indicating that the sublattice magnetization is within 10% of saturation immediately upon ordering. The neutron data also shown that no more than about 1% of the Ni atoms migrate to tetragonal interstitial sites on warming from 4.2°K to room temperature. Thus, Ni atom migration apparently plays no part in this transition. The powder magnetic susceptibility is 2.24×10-6 emu/g at 300°K and is virtually temperature-independent above the transition. ? increases abruptly at 264°K by about 15% and exhibits some field-cooling effects. Studies on the compounds NiXS, for X=1.01, 0.99, 0.97, and 0.94 show that excess sulfur lowers the transition temperature.

JOSEPH T. SPARKS and TED KOMOTO

1968-10-01T23:59:59.000Z

292

Directional solidification studies in Ni-Al alloys  

SciTech Connect

Three solid phases are involved in the phase equilibria of the intermetallic compound Ni{sub 3}Al near its melting point, {beta}, {gamma}{prime}(Ni{sub 3}Al), and {gamma}. The generally-accepted phase diagram involves a eutectic reaction between {beta}{prime} and {gamma}, but some recent studies agree with an older diagram due to Schramm, which has a eutectic reaction between the {beta} and {gamma}{prime} phases. The phase equilibria near Ni{sub 3}Al compositions was evaluated using quenched directional solidification experiments, that preserve the microstructures tonned at the solidification front, and using diffusion couple experiments. These experiments show that eutectic forms between {beta} and {gamma}{prime} phases, as in the Schramm diagram. Growth and phase transformations of these three phases are also studied in the directional solidification experiments. Microstructure analysis shows that etching of Ni{sub 3}Al({gamma}{prime}) is very sensitive to small composition variations and crystallographic orientation changes. The eutectic solidification study confirms that the equilibrium eutectic is {gamma}{prime}+{beta}, and that the metastable {gamma}+{beta} eutectic might be also produced in this system according to the impurities, solidification rates, and composition variations.

Lee, Je-hyun

1993-05-01T23:59:59.000Z

293

NTS-2 Ni-H/sub 2/ battery - an update  

SciTech Connect

This paper presents an extensive data base for future Ni-H/sub 2/ spacecraft batteries. End of-discharge (EOD) voltages for the eight eclipse seasons are presented along with long-term pressure data derived from a strain gauge mounted on the dome of a cell. The use of temperature for charge control is also evaluated. 5 refs.

Stockel, J.F.

1981-01-01T23:59:59.000Z

294

Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system.  

SciTech Connect

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a unique flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected two-dimensional (2D)-2D tunneling results, we have found additional tunneling features that are related to the one-dimensional quantum wires.

Seamons, John Andrew; Lilly, Michael Patrick; Reno, John Louis; Bielejec, Edward Salvador

2004-11-01T23:59:59.000Z

295

Structure of negatively charged muonium in n-type GaAs  

Science Journals Connector (OSTI)

Muon level-crossing resonance and muon-spin-rotation measurements on heavily doped n-type GaAs:Si and GaAs:Te show that the majority of positive muons implanted at room temperature form an isolated diamagnetic muonium center located at a high-symmetry site with Ga neighbors along the ?111? direction(s). These experiments, together with theoretical considerations, imply that negatively charged muonium is at or near the tetrahedral interstitial site with four Ga nearest-neighbor atoms. Except for zero-point energy differences, these results should model negatively charged isolated hydrogen in GaAs.

K.H. Chow; R.F. Kiefl; W.A. MacFarlane; J.W. Schneider; D.W. Cooke; M. Leon; M. Paciotti; T.L. Estle; B. Hitti; R.L. Lichti; S.F.J. Cox; C. Schwab; E.A. Davis; A. Morrobel-Sosa; L. Zavieh

1995-05-15T23:59:59.000Z

296

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density  

E-Print Network (OSTI)

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density Zhi Chen properties of in situ deposited Si3N4 /Si/p-GaAs metal-insulator-semiconductor structures have been offered by a low gate leakage technology in GaAs, such as metal insulator structures, func- tional Ga

Chen, Zhi

297

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS  

E-Print Network (OSTI)

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

Atwater, Harry

298

Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy  

SciTech Connect

We report on the studies of optical phonon modes in nearly defect-free GaN nanowires embedded with intrinsic InGaN quantum dots by using oblique angle transmission infrared spectroscopy. These phonon modes are dependent on the nanowire fill-factor, doping densities of the nanowires, and the presence of InGaN dots. These factors can be applied for potential phonon based photodetectors whose spectral responses can be tailored by varying a combination of these three parameters. The optical anisotropy along the growth (c-) axis of the GaN nanowire contributes to the polarization agility of such potential photodetectors.

Titus, J.; Perera, A. G. U. [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States)] [Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States); Nguyen, H. P. T.; Mi, Z. [Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7 (Canada)] [Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7 (Canada)

2013-03-25T23:59:59.000Z

299

Investigating magnetic proximity effects in NiO/Pd with polarized neutron reflectometry  

Science Journals Connector (OSTI)

With polarized neutron reflectometry we investigated NiO/Pd heterostructures for the presence of a magnetic proximity effect, which is expected to produce an induced ferromagnetic moment in Pd. Using a specific isotope mixture of Ni in the preparation of NiO, the chemical contrast across the Pd/NiO interface was greatly suppressed, thus enhancing sensitivity to magnetic contrast at the reflecting interface. Despite enhanced sensitivity, no evidence for a proximity effect was observed. If present, the magnetic moment per Pd atom could not be more than 0.01?B, regardless of Pd layer thickness, crystalline interface orientation, and number of NiO/Pd bilayers.

A. Hoffmann; M. R. Fitzsimmons; J. A. Dura; C. F. Majkrzak

2001-12-19T23:59:59.000Z

300

GA103 a microprogrammable processor for online filtering  

E-Print Network (OSTI)

GA103 is a 16 bit microprogrammable processor, which emulates the PDP 11 instruction set. It is based on the Am2900 slices. It allows user- implemented microinstructions and addition of hardwired processors. It will perform online filtering tasks in the NA14 experiment at CERN, based on the reconstruction of transverse momentum of photons detected in a lead glass calorimeter. (3 refs).

Calzas, A; Danon, G

1981-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical  

E-Print Network (OSTI)

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical Higher Education: An XP Report. Epema, An Experience Report on Using Gamification in Technical Higher Education, ACM SIGCSE'14. http's not you, it's me · New ambition of GamificationU (Top-20 Eng/Tech*) ·

Iosup, Alexandru

302

Response of GaAs to fast intense laser pulses  

E-Print Network (OSTI)

Motivated by recent experiments, we have performed simulations which show in detail how the electrons and ions in GaAs respond to fast intense laser pulses (with durations of order 100 fs and intensities of order 1-10 TW/cm(2)). The method of tight...

Graves, JS; Allen, Roland E.

1998-01-01T23:59:59.000Z

303

Recombination in Low-Bandgap InGaAs  

SciTech Connect

We review our investigation of recombination in In{sub x}Ga{sub 1-x}As with indium concentrations ranging between x=0.53 (i.e., lattice-matched to InP) and x=0.78. External radiative efficiency measurements were used to study how defect-related and Auger mechanisms compete with radiative recombination. The results indicated that deep mid-gap levels facilitate defect-related recombination in lattice-matched InGaAs while shallower levels play a more important role in the indium-rich alloys. Subsequent sub-bandgap photoluminescence measurements confirmed the presence of deep levels in the lattice-matched InGaAs. The superlinear excitation dependence of the sub-gap emission led to a defect-related deep-donor/shallow-acceptor pair model. Recent cathodoluminescence measurements of the subgap transitions show no spatial contrast, supporting the assignment of this mechanism to evenly distributed point defects. We hypothesize that the deep states observed in lattice-matched InGaAs are related to imperfections in the incorporation of indium or gallium, which become less likely as the indium concentration is increased.

Gfroerer, T. H.; Wanlass, M. W.

2006-01-01T23:59:59.000Z

304

High-quality InP on GaAs  

E-Print Network (OSTI)

In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

Quitoriano, Nathaniel Joseph

2006-01-01T23:59:59.000Z

305

MOCVD Growth of AlGaInN for UV Emitters  

SciTech Connect

Issues related to the growth of nitride-based UV emitters are investigated in this work. More than 100 times of improved in the optical efficiency of the GaN active region can be attained with a combination of raising the growth pressure and introducing a small amount of indium. The unique issue in the UV emitter concerning the use of AlGaN for confinement and the associated tensile cracking is also investigated. They showed that the quaternary AlGaInN is potentially capable of providing confinement to GaN and GaN:In active regions while maintaining lattice matching to GaN, unlike the AlGaN ternary system.

Crawford, Mary; Han, Jung

1999-07-07T23:59:59.000Z

306

Interdiffusion in NiMnSb/V/NiMnSb: X-ray and neutron reflectivity investigation of ion beam sputtered trilayer systems  

SciTech Connect

The new trilayer system NiMnSb/V/NiMnSb on MgO(001) was investigated by means of vibrating sample magnetometry (VSM), x-ray, and neutron reflectivity. VSM revealed a coercive field H{sub c}=23 Oe and a hysteresis loop similar to that of an uncoupled ferromagnet. The x-ray and neutron reflectivity data proved that interface roughnesses of 10 {Angstrom} are present. A detailed analysis yielded significant interdiffusion at the NiMnSb/V interfaces which is one possible explanation for the weak magnetoresistance effect measured in similar NiMnSb-based multilayer systems. {copyright} {ital 1999 American Institute of Physics.}

Schlomka, J.; Tolan, M.; Press, W. [Institut fuer Experimentelle und Angewandte Physik, Christian-Albrechts-Universitaet zu Kiel, 24098 Leibnizstrasse 17-19, Kiel (Germany)] [Institut fuer Experimentelle und Angewandte Physik, Christian-Albrechts-Universitaet zu Kiel, 24098 Leibnizstrasse 17-19, Kiel (Germany); Fitzsimmons, M.R. [Manuel Lujan, Jr. Neutron Scattering Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [Manuel Lujan, Jr. Neutron Scattering Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Siebrecht, R. [Institut Laue-Langevin, 38042 Grenoble, Cedex 9 (France)] [Institut Laue-Langevin, 38042 Grenoble, Cedex 9 (France); Schubert, D.W. [GKSS Forschungszentrum, 21502 Geesthacht (Germany)] [GKSS Forschungszentrum, 21502 Geesthacht (Germany); Simon, P. [Max Planck Institut fuer Polymerforschung, 55021 Mainz (Germany)] [Max Planck Institut fuer Polymerforschung, 55021 Mainz (Germany)

1999-11-01T23:59:59.000Z

307

First-principles investigations of Ni3Al(111) and NiAl(110) surfaces at metal dusting conditions  

SciTech Connect

We investigate the structure and surface composition of the {gamma}{prime}-Ni{sub 3}Al(111) and {beta}-NiAl(110) alloy surfaces at conditions relevant for metal dusting corrosion related to catalytic steam reforming of natural gas. In regular service as protective coatings, nickel-aluminum alloys are protected by an oxide scale, but in case of oxide scale spallation, the alloy surface may be directly exposed to the reactive gas environment and vulnerable to metal dusting. By means of density functional theory and thermochemical calculations for both the Ni{sub 3}Al and NiAl surfaces, the conditions under which CO and OH adsorption is to be expected and under which it is inhibited, are mapped out. Because CO and OH are regarded as precursors for nucleating graphite or oxide on the surfaces, phase diagrams for the surfaces provide a simple description of their stability. Specifically, this study shows how the CO and OH coverages depend on the steam to carbon ratio (S/C) in the gas and thereby provide a ranking of the carbon limits on the different surface phases.

Saadi, Souheil

2011-03-01T23:59:59.000Z

308

Low-temperature magnetization in Ni-rich gamma-Ni100-x-yFexVy alloys  

E-Print Network (OSTI)

is antiferromagnetic) suppresses the ferromagnetic order in the NiFe binary alloys. The magnetization of the alloys with low V (y less than or equal to 11 at. %) has shown a good fit to only the spin-wave T-3/2 term whereas the data for the high V (gamma greater than...

Chakraborty, S.; Mukherjee, GD; Rathnayaka, KDD; Naugle, Donald G.; Majumdar, AK.

2000-01-01T23:59:59.000Z

309

Effect of Composition on the Solidification Behavior of Several Ni-Cr-Mo and Fe-Ni-Cr-Mo Alloys  

E-Print Network (OSTI)

simulate the solidifi- cation behavior of dissimilar welds made between AL-6XN and Ni-base filler metals.[3 differential thermal analysis (DTA) samples and welded specimens. This explains the in- variance of the amount of eutectic constituent observed in the microstructure in the welded and DTA conditions. Multicomponent

DuPont, John N.

310

El Ni~no and La Ni~na: Causes and Global Consequences Michael J McPhaden  

E-Print Network (OSTI)

releases heat into the middle and upper troposphere. This heat provides a source of energy to drive global wind fields that extend El Ni~no's influence to remote parts of the planet. Altered circulation patterns produce droughts, floods, unusual storminess, heat waves, and other weather extremes that have

311

Projected Performance of Three- and Four-Junction Devices Using GaAs and GaInP  

E-Print Network (OSTI)

This paper explores the efficiencies expected for three- and four-junction devices for both space and terrestrial applications. For space applications, the effects of temperature and low concentration are investigated. For terrestrial applications, a concentration of 500 suns is assumed and the theoretical efficiencies are calculated as a function of spectral variations including the effects of air mass, turbidity, and water-vapor content. INTRODUCTION Ga 0.5 In 0.5 P/GaAs two-terminal, two-junction solar cells, invented and developed at the National Renewable Energy Laboratory, are in production at both TECSTAR and Spectrolab. The immediate market for these devices is in space; a future (potentially larger) market is terrestrial concentrator systems. The next-generation cells will add additional junction(s) in order to increase the efficiency. Work on a three-junction cell using an active Ge junction under the Ga 0.5 In 0.5 P/GaAs dual-junction cell has already been reported [1]. Ho...

Gainp; S. R. Kurtz; Sarah R. Kurtz; D. Myers; D. Myers; J.M. Olson; J. M. Olson

1997-01-01T23:59:59.000Z

312

Cross-plane lattice and electronic thermal conductivities of ErAs:InGaAs/InGaAlAs superlattices  

E-Print Network (OSTI)

of thermoelectric energy conversion devices depends on the thermoelectric figure of merit ZT of a material, which- troduced charge carriers in the ErAs:InGaAs regions of 0, 2 1018 , 4 1018 , and 8 1018 cm-3 , respectively. There- fore, the effective carrier concentrations in the four samples were 2 1018 , 4 1018 , 6 1018

313

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

SciTech Connect

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

314

In situ Study of the Formation of Silicide Phases in Amorphous Ni-Si Mixed Layers  

SciTech Connect

In this paper, we investigated Ni silicide phase formation when Si is added within an as deposited 50 nm Ni film. A series of 22 samples with a Si content varying from 0 to 50 at.% was prepared and systematically investigated with in situ x-ray diffraction. The inert oxide substrate was used to identify the phases which first crystallize in an amorphous Ni-Si mixture of a given concentration. The noncongruent silicides Ni{sub 3}Si and Ni{sub 3}Si{sub 2} are never observed to crystallize readily out of the mixture. A remarkable observation is the initial crystallization at low temperature of a hexagonal Ni-silicide, observed over a broad mixed layer composition [35-49%Si]; this hexagonal phase nucleates readily as a single phase [39-47%Si] or together with Ni{sub 2}Si [35-38%Si] or NiSi [49%Si]. This low-temperature phase is related to the high temperature {theta}-phase, but covers a wide composition range up to 47%Si. For the same Ni-Si films deposited on Si(100), the initial nucleation of the Ni(Si) mixture is similar as for the samples deposited on SiO{sub 2}, such that the complex sequence of metal-rich Ni-silicide phases typically observed during Ni/Si reactions is modified. For samples containing more than 21%Si, a simpler sequential phase formation was observed upon annealing. From pole figures, the phase formation sequence was observed to have a significant influence on the texture of the technologically relevant NiSi phase. For mixture composition ranging from 38% to 43%Si, the initial transient {theta}-phase appears extremely textured on Si(100). The observed transient appearance of a hexagonal phase is of importance in understanding the phase formation mechanisms in the Ni-Si system.

Van Bockstael, C.; Detavernier, C; Van Meirhaeghe, R; Jordan-Sweet, J; Lavoie, C

2009-01-01T23:59:59.000Z

315

Environmentally Assisted Cracking of Ni-Base Alloys [Corrosion and  

NLE Websites -- All DOE Office Websites (Extended Search)

LWRs > Environmentally Assisted LWRs > Environmentally Assisted Cracking of Ni-Base Alloys Capabilities Materials Testing Environmentally Assisted Cracking (EAC) of Reactor Materials Corrosion Performance/Metal Dusting Overview Light Water Reactors Fatigue Testing of Carbon Steels and Low-Alloy Steels Environmentally Assisted Cracking of Ni-Base Alloys Irradiation-Induced Stress Corrosion Cracking of Austenitic Stainless Steels Steam Generator Tube Integrity Program Air Oxidation Kinetics for Zr-based Alloys Fossil Energy Fusion Energy Metal Dusting Publications List Irradiated Materials Steam Generator Tube Integrity Other Facilities Work with Argonne Contact us For Employees Site Map Help Join us on Facebook Follow us on Twitter NE on Flickr Corrosion and Mechanics of Materials Light Water Reactors

316

In situ Oxidation of Ultrathin Silver Films on Ni(111)  

SciTech Connect

Oxidation of silver films of one- and two-monolayer thicknesses on the Ni(111) surface was investigated by low-energy electron microscopy at temperatures of 500 and 600 K. Additionally, intensity-voltage curves were measured in situ during oxidation to reveal the local film structure on a nanometer scale. At both temperatures, we find that exposure to molecular oxygen leads to the destabilization of the Ag film with subsequent relocation of the silver atoms to small few-layer-thick silver patches and concurrent evolution of NiO(111) regions. Subsequent exposure of the oxidized surface to ethylene initiates the transformation of bilayer islands back into monolayer islands, demonstrating at least partial reversibility of the silver relocation process at 600 K.

A Meyer; I Flege; S Senanayake; B Kaemena; R Rettew; F Alamgir; J Falta

2011-12-31T23:59:59.000Z

317

Coulomb excitation of $^{68}$Ni at safe energies  

E-Print Network (OSTI)

The $B(E2;0^+\\to2^+)$ value in $^{68}$Ni has been measured using Coulomb excitation at safe energies. The $^{68}$Ni radioactive beam was post-accelerated at the ISOLDE facility (CERN) to 2.9 MeV/u. The emitted $\\gamma$ rays were detected by the MINIBALL detector array. A kinematic particle reconstruction was performed in order to increase the measured c.m. angular range of the excitation cross section. The obtained value of 2.8$^{+1.2}_{-1.0}$ 10$^2$ e$^2$fm$^4$ is in good agreement with the value measured at intermediate energy Coulomb excitation, confirming the low $0^+\\to2^+$ transition probability.

N. Bree; I. Stefanescu; P. A. Butler; J. Cederkäll; T. Davinson; P. Delahaye; J. Eberth; D. Fedorov; V. N. Fedosseev; L. M. Fraile; S. Franchoo; G. Georgiev; K. Gladnishki; M. Huyse; O. Ivanov; J. Iwanicki; J. Jolie; U. Köster; Th. Kröll; R. Krücken; B. A. Marsh; O. Niedermaier; P. Reiter; H. Scheit; D. Schwalm; T. Sieber; J. Van de Walle; P. Van Duppen; N. Warr; D. Weisshaar; F. Wenander; S. Zemlyanoy

2008-03-05T23:59:59.000Z

318

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a  

E-Print Network (OSTI)

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C Richard R. King,2 and Harry A. Atwater1 1 California Institute of Technology, Pasadena, California 91125, USA 2 Spectrolab, Inc., Sylmar, California 91342, USA 3 Aonex Technologies, Pasadena, California 91106

Atwater, Harry

319

FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS  

E-Print Network (OSTI)

FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS Robyn C. Law 1 1 Spectrolab, Inc., A Boeing Company, Sylmar, California 91342, USA 2 California Institute of Technology, Pasadena, California 91125, USA ABSTRACT Spectrolab has demonstrated the first lattice matched In

Atwater, Harry

320

The evolution of Ga and As core levels in the formation of Fe/GaAs (001):A high resolution soft x-ray photoelectron spectroscopic study  

SciTech Connect

A high resolution soft x-ray photoelectron spectroscopic study of Ga and As 3d core levels has been conducted for Fe/GaAs (001) as a function of Fe thickness. This work has provided unambiguous evidence of substrate disrupting chemical reactions induced by the Fe overlayer--a quantitative analysis of the acquired spectra indicates significantly differing behavior of Ga and As during Fe growth, and our observations have been compared with existing theoretical models. Our results demonstrate that the outdiffusing Ga and As remain largely confined to the interface region, forming a thin intermixed layer. Whereas at low coverages Fe has little influence on the underlying GaAs substrate, the onset of substrate disruption when the Fe thickness reaches 3.5 Angstrom results in major changes in the energy distribution curves (EDCs) of both As and Ga 3d cores. Our quantitative analysis suggests the presence of two additional As environments of metallic character: one bound to the interfacial region and another which, as confirmed by in situ oxidation experiments, surface segregates and persists over a wide range of overlayer thickness. Analysis of the corresponding Ga 3d EDCs found not two, but three additional environments--also metallic in nature. Two of the three are interface resident whereas the third undergoes outdiffusion at low Fe coverages. Based on the variations of the integrated intensities of each component, we present a schematic of the proposed chemical makeup of the Fe/GaAs (001) system.

Thompson, Jamie; Neal, James; Shen, Tiehan; Morton, Simon; Tobin, James; Waddill, George Dan; Matthew, Jim; Greig, Denis; Hopkinson, Mark

2008-07-14T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers  

Science Journals Connector (OSTI)

We investigate spectra of InGaN/GaN quantum well (QW) light-emitting diode (LED) structures with heavily doped barriers at different excitation levels. We model the spectral shape and energy position in frames of dominating mechanism of free electron ... Keywords: Band filling, Doped barriers, Emission spectra, Quantum well

B. Arnaudov; D. S. Domanevskii; S. Evtimova; Ch. Ivanov; R. Kakanakov

2009-02-01T23:59:59.000Z

322

Effects of internal fields on deep-level emission in InGaN/GaN quantum-well light-emitting diodes  

Science Journals Connector (OSTI)

We report on the important role played by internal quantum well (QW) fields in the anomalous inversion of capacitance transients in InGaN/GaN multi-QW light-emitting diodes (LEDs). This effect was observed by deep-level transient spectroscopy (DLTS) ... Keywords: Deep level, III-Nitride, Internal fields, Quantum well

L. Rigutti; A. Castaldini; A. Cavallini

2009-02-01T23:59:59.000Z

323

Light output enhancement of InGaN/GaN light-emitting diodes with contrasting indium tin-oxide nanopatterned structures  

Science Journals Connector (OSTI)

Various nanopatterns on the transparent conducting indium tin oxide (ITO) layer are investigated to enhance the light extraction efficiency of the InGaN/GaN light-emitting diodes (LEDs). Triangular, square, and circular nanohole patterns with the square ...

Sang Hyun Jung; Keun Man Song; Young Su Choi; Hyeong-Ho Park; Hyun-Beom Shin; Ho Kwan Kang; Jaejin Lee

2013-01-01T23:59:59.000Z

324

Direct and indirect exciton states in GaAs-(Ga, Al)As double quantum wells under crossed electric and magnetic fields  

Science Journals Connector (OSTI)

A theoretical study of the direct and indirect exciton states in GaAs/Ga1-xAlxAs coupled double quantum wells under crossed electric and magnetic fields is presented. The setup of the system under consideration consists of an ... Keywords: 71.55.Eq, 73.20.Mf, 73.21.Fg, Diamagnetic shifts, Double quantum-wells, Magnetoexcitons

L. E. Oliveira; M. de Dios-Leyva; C. A. Duque

2008-03-01T23:59:59.000Z

325

Exciton diamagnetic shift in GaAs/Ga1-xAlxAs quantum wells under in-plane magnetic fields  

Science Journals Connector (OSTI)

Using a variational procedure in the effective-mass and parabolic-band approximations we investigate the effects of in-plane magnetic fields on the exciton states in single GaAs/Ga1-xAlxAs quantum wells. Exciton properties ... Keywords: 71.55.Eq, 73.20.Mf, 73.21.Fg, Diamagnetic shifts, Magnetoexcitons, Quantum wells

C. A. Duque; M. de Dios-Leyva; L. E. Oliveira

2008-03-01T23:59:59.000Z

326

Determination of70Ge(n,p)70Ga and74Ge(n,p)74Ga reaction cross sections for a fission neutron spectrum  

Science Journals Connector (OSTI)

The fission neutron spectrum averaged cross-sections for the reactions70Ge(n,p)70Ga and74Ge(n,p)74Ga have been determined. The averages of four determinations are, respectively, (3.10±0.30) mb and (0.00938±0.0005...

I. M. Cohen; A. J. Kestelman; J. C. Furnari…

1996-03-14T23:59:59.000Z

327

Electron Density Distributions Calculated for the Nickel Sulfides Millerite, Vaesite, and Heazlewoodite and Nickel Metal: A Case for the Importance of Ni-Ni Bond Paths for  

E-Print Network (OSTI)

Electron Density Distributions Calculated for the Nickel Sulfides Millerite, Vaesite, and Heazlewoodite and Nickel Metal: A Case for the Importance of Ni-Ni Bond Paths for Electron Transport G. V. Gibbs point properties (the electron density (F) and the Hessian of F at the bond critical points (bcp

Downs, Robert T.

328

Formation and Stability of Ni-Al Hydroxide Phases in Soils  

SciTech Connect

The formation of mixed metal-aluminum hydroxide surface precipitates is a potentially significant uptake route for trace metals (including Co, Ni, and Zn) in environmental systems. This paper investigates the effect of mixed Ni-Al hydroxide precipitate formation and aging on Ni solubility and bioavailability in laboratory contaminated soils. Two Delaware agricultural soils were reacted with a 3 mM Ni solution for 12 months at pH's above and below the threshold for mixed Ni-Al hydroxide formation. Ni speciation was determined at 1, 6, and 12 months using X-ray absorption spectroscopy (XAS). Precipitate solubility was examined through desorption experiments using HNO{sub 3} and EDTA as desorbing agents, whereas metal bioavailability was assessed using a Ni-specific bacterial biosensor. For both soils, the formation of Ni-Al hydroxide surface precipitates resulted in a reduction in the fraction of desorbed and bioavailable Ni. However, precipitate dissolution was greater, particularly with EDTA, than in published studies on isolated soil clay fractions, and less affected by aging processes. These results suggest that mixed Ni-Al hydroxide phases forming in real world environments may be both longer-lasting and more susceptible to ligand-promoted dissolution than previously expected.

Peltier, E.; Van Der Lelie, D; Sparks, D

2010-01-01T23:59:59.000Z

329

Proton spectroscopy of 48Ni, 46Fe, and 44Cr  

E-Print Network (OSTI)

Results of decay spectroscopy on nuclei in vicinity of the doubly magic 48Ni are presented. The measurements were performed with a Time Projection Chamber with optical readout which records tracks of ions and protons in the gaseous volume. Six decays of 48Ni including four events of two-proton ground-state radioactivity were recorded. An advanced reconstruction procedure yielded the 2p decay energy for 48Ni of Q2p = 1.29(4) MeV. In addition, the energy spectra of \\b{eta}-delayed protons emitted in the decays of 44Cr and 46Fe, as well as half-lives and branching ratios were determined. The results were found to be consistent with the previous measurements made with Si detectors. A new proton line in the decay of 44Cr corresponding to the decay energy of 760 keV is reported. The first evidence for the \\b{eta}2p decay of 46 Fe, based on one clear event, is shown.

M. Pomorski; M. Pfützner; W. Dominik; R. Grzywacz; A. Stolz; T. Baumann; J. S. Berryman; H. Czyrkowski; R. D?browski; A. Fija?kowska; T. Ginter; J. Johnson; G. Kami?ski; N. Larson; S. N. Liddick; M. Madurga; C. Mazzocchi; S. Mianowski; K. Miernik; D. Miller; S. Paulauskas; J. Pereira; K. P. Rykaczewski; S. Suchyta

2014-07-06T23:59:59.000Z

330

Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate  

SciTech Connect

Simultaneous growth of ?111?{sub B} free-standing and ±[110] lateral GaAsP epitaxial nanowires on GaAs (001) substrates were observed and investigated by electron microscopy and crystallographic analysis. It was found that the growth of both free-standing and lateral ternary nanowires via Au catalysts was driven by the fact that Au catalysts prefer to maintain low-energy (111){sub B} interfaces with surrounding GaAs(P) materials: in the case of free-standing nanowires, Au catalysts maintain (111){sub B} interfaces with their underlying GaAsP nanowires; while in the case of lateral nanowires, each Au catalyst remain their side (111){sub B} interfaces with the surrounding GaAs(P) material during the lateral nanowire growth.

Sun, Wen; Xu, Hongyi [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia)] [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Guo, Yanan [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia) [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia); Gao, Qiang; Hoe Tan, Hark; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia)] [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia); Zou, Jin, E-mail: j.zou@uq.edu.au [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia) [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia QLD 4072 (Australia)

2013-11-25T23:59:59.000Z

331

Single-crystal neutron diffraction studies on Ni-based metal-pnictide superconductor BaNi2As2  

SciTech Connect

We report the results of single-crystal neutron diffraction studies of the superconductor BaNi{sub 2}As{sub 2}. The experiments were performed on a tiny crystal of mass 0.8 mg at several temperatures between 20 and 200 K using the Single Crystal Diffractometer, SCD, at the Los Alamos Neutron Science Center. Above 130 K, BaNi{sub 2}As{sub 2} crystallizes in the tetragonal ThCr{sub 2}Si{sub 2} structure. Our neutron diffraction data corroborate a first-order structural transition around 130 K with a relatively large hysteresis of about 10K, in agreement with observations from bulk studies. The anisotropic thermal displacement coefficients are enhanced along c-axis approaching the transition, and a splitting is observed for in-plane type reflections below the transition, which is evidence for a change in crystal structure.

Kothapalli, Karunakar [Los Alamos National Laboratory; Ronning, F [Los Alamos National Laboratory; Bauer, E D [Los Alamos National Laboratory; Schultz, A J [Los Alamos National Laboratory; Nakotte, Heinz [Los Alamos National Laboratory

2009-01-01T23:59:59.000Z

332

Dynamic Model of Hydrogen in GaN  

NLE Websites -- All DOE Office Websites (Extended Search)

Dynamic Model of Hydrogen in GaN by S. M. Myers and A. F. Wright Motivation-Hydrogen is incorporated into p-type GaN during MOCVD growth, producing highly stable passivation of the Mg acceptors. Complete acceptor activation by thermal H release requires temperatures that threaten material integrity, prompting compromises in device processing. At lower temperatures, forward bias of p-n junctions or electron-beam irradiation produces a metastable, reversible activation without H release. To understand and control such effects, we are developing a mathematical model of H behavior wherein state energies from density-functional theory are employed in diffusion-reaction equations. Previously, we used the greatly simplifying assumptions of local equilibrium among states

333

GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy  

SciTech Connect

Dilute nitride GaNAsP thin films were grown via a GaAsP metamorphic buffer on GaP(100) substrate with gas-source molecular beam epitaxy. The compositions of this III-V-V-V compound were determined by channeling Rutherford backscattering spectroscopy and nuclear reaction analysis. Photoreflectance shows two distinctive transitions from the valence band to the split conduction bands due to N incorporation. Photoluminescence and optical absorption show the fundamental bandgap of Ga(N)AsP is largely tailored by the small amount of N. The observed multiband characteristics and the bandgap tunability of GaNAsP are two merits that fit into the intermediate-band solar cell roadmap, and GaNAsP of high crystal quality provides a strong candidate for intermediate band solar cell materials.

Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States)] [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Yu, K. M.; Walukiewicz, W. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)] [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kudrawiec, R. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Institute of Physics, Wroclaw University of Technology, Wybrzeze, Wyspianskiego 27, 50-370 Wroclaw (Poland); Luce, A. V. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Ting, M. [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States)] [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)] [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2013-03-18T23:59:59.000Z

334

Ga configurations in hydrogenated amorphous silicon as studied by x-ray photoemission spectroscopy  

Science Journals Connector (OSTI)

Samples of crystalline silicon and glow-discharge-deposited hydrogenated amorphous silicon were doped with gallium by low-energy (4-keV) ion implantation. X-ray photoemission spectroscopy was used to study the chemical-bonding states of the Ga. From Ga 3d core-level studies, we found that elementary interstitial, threefold-coordinated, and fourfold-coordinated Ga coexist in the ion-implanted and annealed amorphous silicon network. The percentage of activated threefold- and fourfold-coordinated Ga atoms is found to increase with increasing annealing temperature, prior to crystallization. The energy released by the amorphous silicon lattice upon annealing contributes to the activation of the gallium from the elementary state to the threefold- or fourfold-coordinated state. No evidence of Ga-H bond formation is found. The percentage of fourfold-coordinated Ga, which we call the doping efficiency, ranges from 5% to 10%, depending upon the thermal treatment.

Z. H. Lu; S. Poulin-Dandurand; E. Sacher; A. Yelon

1990-09-15T23:59:59.000Z

335

Accurate characterization and improvement of GaAs microstrip attenuation  

E-Print Network (OSTI)

Mason Carroll, B. S. , Rose-Hulman Institute of Technology Chair of Advisory Committee: Dr. Kai Chang Microstrip transmission lines are widely used in microv, ave circuits. The high frequencies cause the microstrip characteristics, especially... OF CONTENTS . . LIST OF FIGURES LIST OF TABLES. . CHAPTER I INTRODUCTION . . I. A Introduction. I. B Thesis Research Il GaAs MICROSTRlp ATTENUATION . II. A Characterization ol'Transmission Line Attenuation. . . . II. A. I Introduction. II. A. 2...

Carroll, James Mason

2012-06-07T23:59:59.000Z

336

Ni62(n,?) and Ni63(n,?) cross sections measured at the n_TOF facility at CERN  

Science Journals Connector (OSTI)

The cross section of the Ni62(n,?) reaction was measured with the time-of-flight technique at the neutron time-of-flight facility n_TOF at CERN. Capture kernels of 42 resonances were analyzed up to 200 keV neutron energy and Maxwellian averaged cross sections (MACS) from kT= 5–100 keV were calculated. With a total uncertainty of 4.5%, the stellar cross section is in excellent agreement with the the KADoNiS compilation at kT=30 keV, while being systematically lower up to a factor of 1.6 at higher stellar temperatures. The cross section of the Ni63(n,?) reaction was measured for the first time at n_TOF. We determined unresolved cross sections from 10 to 270 keV with a systematic uncertainty of 17%. These results provide fundamental constraints on s-process production of heavier species, especially the production of Cu in massive stars, which serve as the dominant source of Cu in the solar system.

C. Lederer et al. (n_TOF Collaboration)

2014-02-28T23:59:59.000Z

337

InGaAsSb thermophotovoltaic diode physics evaluation  

SciTech Connect

The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1,000 C, which sets an upper limit on the TPV diode bandgap of 0.6 eV from efficiency and power density considerations. This bandgap requirement has necessitated the development of new diode material systems, never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice-matched on GaSb substrates have achieved the highest performance. This report relates observed diode performance to electro-optic properties such as minority carrier lifetime, diffusion length and mobility and provides initial links to microstructural properties. This analysis has bounded potential diode performance improvements. For the 0.52 eV InGaAsSb diodes used in this analysis the measured dark current is 2 {times} 10{sup {minus}5} A/cm{sup 2}, versus a potential Auger limit 1 {times} 10{sup {minus}5} A/cm{sup 2}, a radiative limit of 2 {times} 10{sup {minus}6} A/cm{sup 2} (no photon recycling), and an absolute thermodynamic limit of 1.4 {times} 10{sup {minus}7} A/cm{sup 2}. These dark currents are equivalent to open circuit voltage gains of 20 mV (7%), 60 mV (20%) and 140 mV (45%), respectively.

Charache, G.W.; Baldasaro, P.F.; Danielson, L.R. [Lockheed-Martin, Inc., Schenectady, NY (United States)] [and others

1998-06-01T23:59:59.000Z

338

Computational Study of Sulfur–nickel Interactions: A New S–Ni Phase Diagram  

SciTech Connect

Prediction of the interactions between H2S-contaminated hydrogen fuel and Ni surfaces under conditions similar to those for solid oxide fuel cell (SOFC) operation using DFT (density function theory) calculations (with thermodynamic corrections) has resulted in a new S–Ni phase diagram, which suggests the existence of an intermediate state between clean Ni surfaces and nickel sulfides – sulfur atoms adsorbed on Ni surfaces. This prediction is consistent with many experimental observations relevant to sulfur poisoning of Nibased anodes in SOFCs, which cannot be explained using the existing S–Ni bulk phase diagram from classical thermodynamics. The accurate prediction of the adsorption phase is vital to a fundamental understanding of the sulfur poisoning mechanism of Ni-based anodes under SOFC operating conditions.

Wang, Jeng-Han; Liu, Meilin

2007-06-22T23:59:59.000Z

339

PT AND PT/NI "NEEDLE" ELETROCATALYSTS ON CARBON NANOTUBES WITH HIGH ACTIVITY FOR THE ORR  

SciTech Connect

Platinum and platinum/nickel alloy electrocatalysts supported on graphitized (gCNT) or nitrogen doped carbon nanotubes (nCNT) are prepared and characterized. Pt deposition onto carbon nanotubes results in Pt 'needle' formations that are 3.5 nm in diameter and {approx}100 nm in length. Subsequent Ni deposition and heat treatment results in PtNi 'needles' with an increased diameter. All Pt and Pt/Ni materials were tested as electrocatalysts for the oxygen reduction reaction (ORR). The Pt and Pt/Ni catalysts showed excellent performance for the ORR, with the heat treated PtNi/gCNT (1.06 mA/cm{sup 2}) and PtNi/nCNT (0.664 mA/cm{sup 2}) showing the highest activity.

Colon-Mercado, H.

2011-11-10T23:59:59.000Z

340

(2×2) reconstructions of the {111} polar surfaces of GaAs  

Science Journals Connector (OSTI)

Ab initio total-energy calculations were used to examine (2×2) reconstruction models for the (111) and (1¯1¯1¯) surfaces of GaAs. For the (111) surface the lowest-energy Ga-vacancy geometry is determined; several mechanisms for Ga-vacancy formation are examined and other reconstructions are discussed. For the (1¯1¯1¯) surface it is shown that the As-vacancy model is unlikely and other geometries are considered.

E. Kaxiras; Y. Bar-Yam; J. D. Joannopoulos; K. C. Pandey

1986-03-15T23:59:59.000Z

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341

Synthesis and Structure of Sr3GaN3 and Sr6GaN5:? Strontium Gallium Nitrides with Isolated Planar [GaN3]6- Anions  

Science Journals Connector (OSTI)

Synthesis and Structure of Sr3GaN3 and Sr6GaN5:? Strontium Gallium Nitrides with Isolated Planar [GaN3]6- Anions ... 9-19 In most cases, an alkaline earth metal is introduced into a Na melt to enhance the solubility of nitrogen, and is incorporated in the nitride product. ... The container was sealed by welding its open end in an argon atmosphere with active water-cooling so that NaN3 did not decompose due to heating during the welding. ...

Dong Gon Park; Zoltán A. Gál; Francis J. DiSalvo

2003-02-13T23:59:59.000Z

342

Ga[sub 13], Al[sub 13], GaAl[sub 12], and chromium-pillared montmorillonites: Acidity and reactivity for cumene conversion  

SciTech Connect

A comparison has been made of the acidic characters of a series of metal polyoxocation pillar interlayered clay minerals (M-PILCs) by studying the infrared spectra of adsorbed pyridine. These comparisons were made for Ga[sub 13]-, Al[sub 13]- and GaAl[sub 12]-PILCs, and for Na[sup +]-exchanged montmorillonite (Na-STx-1). The Ga[sub 13]-PILC, was found to exhibit the strongest Lewis acid sites, followed by the AL[sub 13]-, and GaAl[sub 12]-PILCs and then by the Ns-STx-1. The relative number of Lewis acid sites, however, was found to be much greater for the GaAl[sub 12]-PILC, particularly after calcination at higher temperatures, indicating that the Ga[sub 13] Lewis acid sites did not have as high a thermal stability. The Broensted acidic characters for the pillared clays depend on the pillar, and follow the general decreasing order of abundance of GaAl[sub 12]-, Al[sub 13], and Ga[sub 13]-PILC when expressed as absorbance per unit mass. When the acidities per unit surface area were estimated, however, the Ga[sub 13]-PILCs were found to have the greatest number. This indicated that while the pillars contribute to the PILC acidities primarily through increasing the exposed phyllosilicate sheet surface areas, there is also a significant effect arising from the acidic characters of the pillars themselves. The dehydrogenation activities of Ga[sub 13]-, GaAl[sub 12]-, Al[sub 13]-, and Na-STx-1, in addition to a chromium polyoxocation-PILC, were compared by observing the products formed upon reaction with the model compound cumene. The Ga[sub 13]- and chromium-PILCs and the Na-Stx-1 exhibited almost exclusively dehydrogenation activities, whereas the Al[sub 13]- and GaAl[sub 12]-PILCs exhibited both cracking and dehydrogenation behaviors. These results prove that the pillars themselves can very strongly effect the catalytic activities of the PILCs. 3 refs., 6 figs., 2 tabs.

Bradley, S.M.; Kydd, R.A. (Univ. of Calgary, Alberta (Canada))

1993-05-01T23:59:59.000Z

343

Carrier-induced change in refractive index of InP, GaAs, and InGaAsP  

SciTech Connect

The authors have theoretically estimated the change in refractive index {Delta}{ital n} produced by injection of free carriers in InP, GaAs, and InGaAsP. Bandfilling (Burstein-Moss effect), band-gap shrinkage, and free-carrier absorption (plasma effect) were included. Carrier concentrations of 10{sup 16}/cm{sup 3} to 10{sup 19}/cm{sup 3} and photon energies of 0.8 to 2.0 eV were considered. Predictions of {Delta}{ital n} are in reasonably good agreement with the limited experimental data available. Refractive index changes as large as 10{sup {minus} 2} are predicted for carrier concentrations of 10{sup 18}/cm{sup 3}, suggesting that low-loss optical phase modulators and switches using carrier injection are feasible in these materials.

Bennett, B.R. (Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA (US)); Soref, R.A. (Solid State Sciences Directorate, Rome Air Development Center, Hanscom Air Force Base, Bedford, MA (US)); Del Alamo, J.A. (Dept. of Electrical Engineering and Computer Science, Massachussets Institute of Technology, Cambridge, MA (US))

1990-01-01T23:59:59.000Z

344

Photoluminescence kinetics of indirect excitons in GaAs/AlxGa1-xAs coupled quantum wells  

Science Journals Connector (OSTI)

Photoluminescence (PL) kinetics of long-lifetime indirect excitons in a GaAs/AlxGa1-xAs coupled quantum well characterized by a small in-plane random potential was studied at temperatures 1.5<~T<~15 K for a wide range of exciton densities. Strong deviations of the indirect exciton PL kinetics from monoexponential PL rise/decay were observed at low temperatures and high exciton densities. In particular, right after the excitation is switched off, the spectrally integrated indirect exciton PL intensity increased sharply. Simultaneously, the indirect exciton energy distribution was observed to narrow significantly. The observed increase in intensity is attributed to the sharp increase of occupation of the optically active exciton states. The energy distribution narrowing is explained in terms of the phonon mediated exciton energy relaxation in momentum space and in the in-plane random potential.

L. V. Butov, A. Imamoglu, A. V. Mintsev, K. L. Campman, and A. C. Gossard

1999-01-15T23:59:59.000Z

345

Sensitivity of absorption spectra to surface segregation in InGaN/GaN quantum well structures  

SciTech Connect

We investigate the influence of the indium surface segregation on absorption spectra in InGaN/GaN quantum well structures having different indium amount. Results of the mathematical modeling show that such influence is more pronounced in quantum well structures with high indium amounts. The origin of this effect is related to the interplay between the indium surface segregation and internal electrostatic fields. Our theoretical analysis is performed using semiconductor Bloch equations within the Hartree-Fock approximation including into consideration excitonic effects. Results of the global sensitivity analysis evidence that the influence of the indium surface segregation is less than one order of magnitude in comparison with the impact of the quantum-well width and indium molar fraction. Also, the influence of the indium surface segregation is not the same for each interface of the quantum well.

Klymenko, M. V.; Shulika, O. V. [Lab. Photonics, Kharkov National University of Radio Electronics, Kharkov, 61166 (Ukraine); Sukhoivanov, I. A. [Department of Electronics, Engineering Division, University of Guanajuato, Salamanca, Guanajuato, 36885 (Mexico)

2014-05-15T23:59:59.000Z

346

Band offsets from two special GaAs-AlxGa1-xAs quantum-well structures  

Science Journals Connector (OSTI)

Half-parabolic quantum wells and two-stepped quantum wells have been grown by molecular-beam epitaxy with the GaAs-AlxGa1-xAs system and investigated by photoluminescence techniques to determine the band offsets at the heterointerfaces. Both structures provide interband transitions that are sensitive to the partitioning of the energy-gap discontinuity ?Eg=?Ec+?Ev between the conduction and valence bands. It is concluded that the data require valence-band offsets ?Ev equal to 38% and 41% of ?Eg for the half-parabolic wells and the two-stepped wells, respectively. These band offsets are therefore in agreement with the trend of other recent determinations.

R. C. Miller; A. C. Gossard; D. A. Kleinman

1985-10-15T23:59:59.000Z

347

ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures  

SciTech Connect

Radiation from a 193 nm ArF laser was investigated to modify surface properties of InGaAs/InGaAsP quantum well (QW) heterostructures and introduce defects required to enhance intermixing during the annealing process. A top 200 nm thick sacrificial layer of InP served as a reservoir for laser generated defects. The irradiation with up to 90 pulses at 65-150 mJ/cm{sup 2} allowed to generate an array of 1.2x1 mm{sup 2} sites of QW intermixed material, with bandgap energy blueshifted up to 107 nm. We discuss the mechanism and advantages of this approach for postgrowth wafer level fabrication of multibandgap QW material.

Genest, Jonathan; Beal, Romain; Aimez, Vincent; Dubowski, Jan J. [Department of Electrical and Computer Engineering, Center of Excellence for Information Engineering, Universite de Sherbrooke, Sherbrooke, Quebec J1K 2R1 (Canada)

2008-08-18T23:59:59.000Z

348

INTERPRTATION DES FAUTES D'EMPILEMENT DANS L'ANTIFERROMAGNTIQUE K2NiF4  

E-Print Network (OSTI)

859. INTERPR�TATION DES FAUTES D'EMPILEMENT DANS L'ANTIFERROMAGN�TIQUE K2NiF4 Par R. PLUMIER. 2014 Nous montrons qu'une légère déformation orthorhombique de la maille de K2NiF4 entraîne parNiF4 cell leads to a decrease of the free energy of the crystal through an exchange striction

Boyer, Edmond

349

Ni(II) Sorption on Biogenic Mn-Oxides with Varying Mn  

E-Print Network (OSTI)

Ni(II) Sorption on Biogenic Mn-Oxides with Varying Mn Octahedral Layer Structure M E N G Q I A N G(II) sorption mechanisms were determined at pH 7 and at different Ni(II) loadings, using isotherm and extended X in the interlayer of the BioMnOx and the maximum Ni(II) sorption capacity increases as the formation pH of Bio

Sparks, Donald L.

350

E-Print Network 3.0 - algorithm ga technique Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

for: algorithm ga technique Page: << < 1 2 3 4 5 > >> 1 GAMMA: Global Arrays Meets MATLAB Rajkiran Panuganti Summary: is a straightforward implementa- tion of a standard...

351

Band-structure analysis from photoreflectance spectroscopy in (Ga,Mn)As  

SciTech Connect

Modulation photoreflectance spectroscopy has been applied to study the band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn content. Structural and magnetic properties of the layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery, respectively. The revealed results of decrease in the band-gap-transition energy in the (Ga,Mn)As layers with increasing Mn content are interpreted in terms of a disordered valence band, extended within the band gap, formed, in highly Mn-doped (Ga,Mn)As, as a result of merging the Mn-related impurity band with the host GaAs valence band.

Yastrubchak, Oksana; Gluba, Lukasz; Zuk, Jerzy [Institute of Physics, Maria Curie-Sklodowska University, 20-031 Lublin (Poland); Wosinski, Tadeusz; Andrearczyk, Tomasz; Domagala, Jaroslaw Z. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Sadowski, Janusz [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland and MAX-Lab, Lund University, 22100 Lund (Sweden)

2013-12-04T23:59:59.000Z

352

Assessment of the Passivation Capabilities of Two Different Covalent Chemical Modifications on GaP(100)  

Science Journals Connector (OSTI)

With respect to toxicity, the UDA-functionalized GaP provided better passivation which was confirmed by less gallium leaching into water and saline solutions. ... Due to its promising characteristics for device fabrication, gallium arsenide (GaAs) has been extensively studied and the formation of self-assembled monolayers has been of interest. ... A general increase in the Ga/P ratio can be seen in the surfaces exposed to solutions compared to the clean surface which is attributed to the greater solubility of the phosphorus oxide (P2O5) compared to the gallium oxide (Ga2O3). ...

David Richards; Dmitry Zemlyanov; Albena Ivanisevic

2010-02-03T23:59:59.000Z

353

Interface Reactions and Electrical Characteristics of Au/GaSb Contacts  

SciTech Connect

The reaction of Au with GaSb occurs at a relatively low temperature (100 C). Upon annealing, a AuSb{sub 2} compound and several Au-Ga phases are produced. Phase transitions occur toward higher Ga concentration with increasing annealing temperatures. Furthermore, the depth of the contact also increases with increased annealing temperature. They found that the AuSb{sub 2} compound forms on the GaSb surface, with the compound crystal partially ordered with respect to the substrate. The transition of Schottky- to ohmic-contact behavior in Au/n-type GaSb occurs simultaneously with the formation of the AuGa compound at about a 250 C annealing temperature. This ohmic contact forms without the segregation of dopants at the metallic compound/GaSb interface. Therefore it is postulated that transition from Schottky- to ohmic-contact behavior is obtained through a series of tunneling transitions of electrons through defects in the depletion region in the Au/n-type GaSb contacts. Contact resistivities of 6-7 x 10{sup -6} {Omega}-cm{sup 2} were obtained with the annealing temperature between 300 and 350 C for 30 seconds. In Au/p-type GaSb contacts, the resistivity was independent of the annealing temperature. This suggested that the carrier transport in p-type contact dominated by thermionic emission.

H. Ehsani; R.J. Gutmann; G.W. Charache

2000-07-07T23:59:59.000Z

354

Si in GaN -- On the nature of the background donor  

SciTech Connect

A characterization of the Si impurity in GaN is performed by Raman spectroscopy. Applying hydrostatic pressure up to 25 GPa the authors study the behavior of the LO phonon-plasmon mode in a series of high mobility Si doped GaN films. In contrast to earlier results on unintentionally doped bulk GaN crystals no freeze out of the free carriers could be observed in Si doped samples. The authors find that Si is a shallow hydrogenic donor throughout the pressure range studied. This result positively excludes Si incorporation as a dominant source of free electrons in previously studied bulk GaN samples.

Wetzel, C.; Chen, A.L.; Suski, T.; Ager, J.W. III; Walukiewicz, W. [Lawrence Berkeley National Lab., CA (United States). Materials Science Div.

1996-08-01T23:59:59.000Z

355

Structural defects in GaN revealed by Transmission Electron Microscopy  

SciTech Connect

This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

Liliental-Weber, Zuzanna

2014-04-18T23:59:59.000Z

356

Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics  

Science Journals Connector (OSTI)

An n++-GaAs/p++-AlGaAs tunnel junction with a peak current density of 10?100 A cm?2 is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10?000 suns is below 5 mV. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500 A cm?2 and a voltage drop at 10?000 suns of around 20 mV, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations.

I García; I Rey-Stolle; C Algora

2012-01-01T23:59:59.000Z

357

Growth of 5 mm GaN Single Crystals at 750 °C from an Na?Ga Melt  

Science Journals Connector (OSTI)

Laser diodes using GaN-based III?V nitrides have been developed, and nitride semiconductor devices are now of considerable interest. ... When the inclusions were exposed to air, they reacted with water vapor in air and produced sodium hydroxide and small gallium metal droplets at the fracture surface of the crystal. ... The solubility of nitrogen in liquid sodium is extremely low (7.1 × 10-9 mol % N at 600 °C). ...

Masato Aoki; Hisanori Yamane; Masahiko Shimada; Seiji Sarayama; Francis J. DiSalvo

2001-02-03T23:59:59.000Z

358

NiSource Energy Technologies Inc.: System Integration of Distributed Power for Complete Building Systems  

SciTech Connect

Summarizes NiSource Energy Technologies' work under contract to DOE's Distribution and Interconnection R&D. Includes studying distributed generation interconnection issues and CHP system performance.

Not Available

2003-10-01T23:59:59.000Z

359

NiSource Energy Technologies: Optimizing Combined Heat and Power Systems  

SciTech Connect

Summarizes NiSource Energy Technologies' work under contract to DOE's Distribution and Interconnection R&D. Includes studying distributed generation interconnection issues and CHP system performance.

Not Available

2003-01-01T23:59:59.000Z

360

Reducible Supports for Ni-based Oxygen Carriers in Chemical Looping Combustion  

Science Journals Connector (OSTI)

Reducible Supports for Ni-based Oxygen Carriers in Chemical Looping Combustion ... Industrial & Engineering Chemistry Research2014 53 (42), 16341-16348 ...

Saurabh Bhavsar; Götz Veser

2013-03-29T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Effect of Pt addition on Ni silicide formation at low temperature: Growth, redistribution, and solubility  

SciTech Connect

The formation of Ni silicide during the reaction between Ni(5% Pt) and a Si(100) substrate has been analyzed by differential scanning calorimetry (DSC), in situ x-ray diffraction (XRD), cross-sectional transmission electron microscopy (TEM), and {sup 4}He{sup +} Rutherford backscattering. The DSC measurements show evidence of the Ni{sub 2}Si nucleation followed by lateral growth formation. In situ XRD and TEM have been used to investigate the sequence of formation of the silicides. These experiments show that the formations of Ni{sub 2}Si and NiSi occur simultaneously in the presence of the Pt alloy. The redistribution of platinum at different stages of the Ni silicide growth has been determined. We have estimated the solubility limit of platinum (1 at. % at 573 K) in the Ni{sub 2}Si phase by extrapolation from a measured value at 1073 K. This redistribution is explained in terms of the solubility limits and the diffusion of Pt in the Ni{sub 2}Si and NiSi phases. Pt is more likely to reside at the silicide grain boundaries and the interfaces where it can slow down the silicide growth kinetics.

Hoummada, K.; Perrin-Pellegrino, C.; Mangelinck, D. [Aix-Marseille Universite, IM2NP, Campus de Saint-Jerome, Avenue Escadrille Normandie Niemen-Case 142, F-13397 Marseille Cedex (France); CNRS, IM2NP (UMR 6242), Case 142, Faculte de Saint-Jerome, F-13397 Marseille Cedex (France)

2009-09-15T23:59:59.000Z

362

Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors  

SciTech Connect

A drift-diffusion transport model has been used to examine the performance capabilities of AlGaN/GaN Npn heterojunction bipolar transistors (HBTs). The Gummel plot from the first GaN-based HBT structure recently demonstrated is adjusted with simulation by using experimental mobility and lifetime reported in the literature. Numerical results have been explored to study the effect of the p-type Mg doping and its incomplete ionization in the base. The high base resistance induced by the deep acceptor level is found to be the cause of limiting current gain values. Increasing the operating temperature of the device activates more carriers in the base. An improvement of the simulated current gain by a factor of 2 to 4 between 25 and 300 C agrees well with the reported experimental results. A preliminary analysis of high frequency characteristics indicates substantial progress of predicted rf performances by operating the device at higher temperature due to a reduced extrinsic base resistivity.

MONIER,C.; PEARTON,S.J.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-03-10T23:59:59.000Z

363

Local indium segregation and band structure in high efficiencygreen light emitting InGaN/GaN diodes  

SciTech Connect

GaN/InGaN light emitting diodes (LEDs) are commercialized for lighting applications because of the cost efficient way that they produce light of high brightness. Nevertheless, there is significant room for improving their external emission efficiency from typical values below 10 percent to more than 50 percent, which are obtainable by use of other materials systems that, however, do not cover the visible spectrum. In particular, green-light emitting diodes fall short in this respect, which is troublesome since the human eye is most sensitive in this spectral range. In this letter advanced electron microscopy is used to characterize indium segregation in InGaN quantum wells of high-brightness, green LEDs (with external quantum efficiency as high as 15 percent at 75 A/cm2). Our investigations reveal the presence of 1-3 nm wide indium rich clusters in these devices with indium concentrations as large as 0.30-0.40 that narrow the band gap locally to energies as small as 2.65 eV.

Jinschek, Joerg R.; Erni, Rolf; Gardner, Nathan F.; Kim, AndrewY.; Kisielowski, Christian

2004-11-23T23:59:59.000Z

364

Deep Levels in p-Type InGaAsN Lattice Matched to GaAs  

SciTech Connect

Deep level transient spectroscopy (DLTS) measurements were utilized to investigate deep level defects in metal-organic chemical deposition (MOCVD)-grown unintentionally doped p-type InGaAsN films lattice matched to GaAs. The as-grown material displayed a high concentration of deep levels distributed within the bandgap, with a dominant hole trap at E{sub v} + 0.10 eV. Post-growth annealing simplified the deep level spectra, enabling the identification of three distinct hole traps at 0.10 eV, 0.23 eV, and 0.48 eV above the valence band edge, with concentrations of 3.5 x 10{sup 14} cm{sup {minus}3}, 3.8 x 10{sup 14} cm{sup {minus}3}, and 8.2 x 10{sup 14} cm{sup {minus}3}, respectively. A direct comparison between the as-grown and annealed spectra revealed the presence of an additional midgap hole trap, with a concentration of 4 x 10{sup 14} cm{sup {minus}3} in the as-grown material. The concentration of this trap is sharply reduced by annealing, which correlates with improved material quality and minority carrier properties after annealing. Of the four hole traps detected, only the 0.48 eV level is not influenced by annealing, suggesting this level may be important for processed InGaAsN devices in the future.

Allerman, A.A.; Jones, E.D.; Kaplar, R.J.; Kurtz, S.R.; Kwon, D.; Ringel, S.A.

1999-03-02T23:59:59.000Z

365

Avalanche buildup time of an InP/InGaAsP/InGaAs APD at high gain  

SciTech Connect

Under a high-gain operating condition, the presence of a multiplication process in the InGaAs(P) regions of an InP/InGaAsP/InGaAs avalanche photodiode having a structure of separated absorption and multiplication regions (SAM-APD) could lead to significant enhancement of the avalanche buildup time. As a result, the bandwidth of the device could be reduced considerably. The dependence of the avalanche multiplication factor and the intrinsic response time on the reverse bias voltage, the heterointerface field, the doping concentrations, and the width of the InP layer are examined in detail for the case in which hole injection is assumed. It is shown, for example, that for a fixed value of doping concentrations, the reduction of the excess noise factor and the enhancement of the gain-bandwidth product of the device can be made at the same time by a proper increase of the width of the InP layer.

Hsieh, H.C.; Sargeant, W. (Iowa State Univ. of Science and Technology, Ames, IA (USA). Dept. of Electrical Engineering)

1989-09-01T23:59:59.000Z

366

Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices  

SciTech Connect

GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO{sub x}/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

C.A. Wang; D.A. Shiau; P.G. Murphy; P.W. O'brien; R.K. Huang; M.K. Connors; A.C. Anderson; D. Donetsky; S. Anikeev; G. Belenky; D.M. Depoy; G. Nichols

2003-06-16T23:59:59.000Z

367

Critical size for the generation of misfit dislocations and their effects on electronic properties in GaAs nanosheets on Si substrate  

E-Print Network (OSTI)

-Queisser limit6 for the solar-cell efficiency. Recently, NWs of various semi- conductors such as GaAs/AlGaAs,7

Southern California, University of

368

IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 42, NO. 4, APRIL 2006 397 Design and Performance of an InGaAsInP  

E-Print Network (OSTI)

, focusing on the effect of the critical InGaAsP grading layer between the narrow-gap InGaAs absorption layer

Buller, Gerald S.

369

Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions  

SciTech Connect

This Letter investigates the efficiency enhancement achieved by tunnel junction insertion into the InGaN/GaN multi-quantum well (MQW) active region of blue light emitting diodes (LEDs). The peak quantum efficiency of such LED exceeds 100%, but the maximum wall-plug efficiency (WPE) hardly changes. However, due to the increased bias, the WPE peaks at much higher input power, i.e., the WPE droop is significantly delayed, and the output power is strongly enhanced. The main physical reason for this improvement lies in the non-uniform vertical carrier distribution typically observed within InGaN MQWs.

Piprek, Joachim, E-mail: piprek@nusod.org [NUSOD Institute LLC, P.O. Box 7204, Newark, Delaware 19714 (United States)

2014-02-03T23:59:59.000Z

370

Improved oxidation sulfidation resistance of Fe-Cr-Ni alloys  

DOE Patents (OSTI)

High temperature resistance of Fe-Cr-Ni alloy compositions to oxidative and/or sulfidative conditions is provided by the incorporation of about 1 to 8 wt % of Zr or Nb and results in a two-phase composition having an alloy matrix as the first phase and a fine grained intermetallic composition as the second phase. The presence and location of the intermetallic composition between grains of the matrix provides mechanical strength, enhanced surface scale adhesion, and resistance to corrosive attack between grains of the alloy matrix at temperatures of 500 to 1000/sup 0/C.

Natesan, K.; Baxter, D.J.

1983-07-26T23:59:59.000Z

371

Bimetallic Fe–Ni Oxygen Carriers for Chemical Looping Combustion  

Science Journals Connector (OSTI)

(2-4) In CLC (schematic in Figure 1), a fuel is combusted in a fuel reactor (“reducer”) in contact with an oxygen carrier (typically a metal oxide). ... After combustion of the fuel, the reduced metal is then transferred to the air reactor (“oxidizer”) where it is reoxidized by air, and then circulated back to the reducer to close the material “loop”. ... Son, S. R.; Kim, S. D.Chemical-looping combustion with NiO and Fe2O3 in a thermobalance and circulating fluidized bed reactor with double loops Ind. Eng. ...

Saurabh Bhavsar; Götz Veser

2013-05-20T23:59:59.000Z

372

Stable atomic structure of NiTi austenite  

SciTech Connect

Nitinol (NiTi), the most widely used shape-memory alloy, exhibits an austenite phase that has yet to be identified. The usually assumed austenitic structure is cubic B2, which has imaginary phonon modes, hence it is unstable. We suggest a stable austenitic structure that “on average” has B2 symmetry (observed by x-ray and neutron diffraction), but it exhibits finite atomic displacements from the ideal B2 sites. The proposed structure has a phonon spectrum that agrees with that from neutron scattering, has diffraction spectra in agreement with x-ray diffraction, and has an energy relative to the ground state that agrees with calorimetry data.

Zarkevich, Nikolai A [Ames Laboratory; Johnson, Duane D [Ames Laboratory

2014-08-01T23:59:59.000Z

373

Semiconducting p-type MgNiO:Li epitaxial films fabricated by cosputtering method  

SciTech Connect

Li-doped ternary Mg{sub x}Ni{sub 1-x}O thin films were deposited on (0001) Al{sub 2}O{sub 3} substrates by a radio frequency (RF) magnetron cosputtering method with MgO and NiO:Li targets. The Mg mole fraction and Li content were relatively controlled by changing RF power for the MgO target over a range of 0-300 W, while the NiO:Li target was kept at 150 W. As a result, all films were epitaxially grown on (0001) Al{sub 2}O{sub 3} substrates with the relationship of [110]{sub NiO}||[1110]{sub Al2O3}, [112]{sub NiO}||[2110]{sub Al2O3} (in-plane), and [111]{sub NiO}||[0001]{sub Al2O3} (out-of-plane), and showed p-type semiconducting properties. Furthermore, from x-ray diffraction patterns, the authors found that MgO was effectively mixed with NiO:Li without structural deformation due to low lattice mismatch (0.8%) between NiO and MgO. However, the excess Li contents degraded the crystallinity of the MgNiO films. The band-gap of films was continuously shifted from 3.66 eV (339 nm) to 4.15 eV (299 nm) by the RF power of the MgO target. A visible transmittance of more than 80% was exhibited at RF powers higher than 200 W. Ultimately, the electrical resistivity of p-type MgNiO films was improved from 7.5 to 673.5 {Omega}cm, indicating that the Li-doped MgNiO films are good candidates for transparent p-type semiconductors.

Kwon, Yong Hun; Chun, Sung Hyun; Cho, Hyung Koun [School of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

2013-07-15T23:59:59.000Z

374

Process and properties of electroless Ni-Cu-P-ZrO{sub 2} nanocomposite coatings  

SciTech Connect

Highlights: Black-Right-Pointing-Pointer The Ni-P and Ni-P-Cu-ZrO{sub 2} coatings were produced by electroless technique. Black-Right-Pointing-Pointer The influence of copper and ZrO{sub 2} nanoparticles on Ni-P was studied. Black-Right-Pointing-Pointer Surface morphology, structure and electrochemical behavior were evaluated. Black-Right-Pointing-Pointer The Ni-Cu-P-ZrO{sub 2} and Ni-P-ZrO{sub 2} coatings are more resistant to corrosion than Ni-P. Black-Right-Pointing-Pointer Introduction of Cu and ZrO{sub 2} in the matrix aids to the enhancement of microhardness. -- Abstract: Electroless Ni-Cu-P-ZrO{sub 2} composite coating was successfully obtained on low carbon steel matrix by electroless plating technique. Coatings with different compositions were obtained by varying copper as ternary metal and nano sized zirconium oxide particles so as to obtain elevated corrosion resistant Ni-P coating. Microstructure, crystal structure and composition of deposits were analyzed by SEM, EDX and XRD techniques. The corrosion behavior of the deposits was studied by anodic polarization, Tafel plots and electrochemical impedance spectroscopy (EIS) in 3.5% sodium chloride solution. The ZrO{sub 2} incorporated Ni-P coating showed higher corrosion resistance than plain Ni-P. The introduction of copper metal into Ni-P-ZrO{sub 2} enhanced the protection ability against corrosion. The influence of copper metal and nanoparticles on microhardness of coatings was evaluated.

Ranganatha, S. [Department of Studies in Chemistry, School of Chemical Sciences, Kuvempu University, Shankaraghatta 577451, Shimoga, Karnataka (India)] [Department of Studies in Chemistry, School of Chemical Sciences, Kuvempu University, Shankaraghatta 577451, Shimoga, Karnataka (India); Venkatesha, T.V., E-mail: drtvvenkatesha@yahoo.co.uk [Department of Studies in Chemistry, School of Chemical Sciences, Kuvempu University, Shankaraghatta 577451, Shimoga, Karnataka (India); Vathsala, K. [Nanotribology Laboratory, Mechanical engineering department, Indian Institute of Science, Bangalore (India)] [Nanotribology Laboratory, Mechanical engineering department, Indian Institute of Science, Bangalore (India)

2012-03-15T23:59:59.000Z

375

Enhancing the Light Extraction of InGaN Light-Emitting Diodes by Patterning the Dicing Streets  

Science Journals Connector (OSTI)

Patterning the dicing streets technology was used to define the high extraction efficiency region of InGaN-GaN multiple-quantum-well light-emitting diodes (LEDs). The external quantum...

Lin, Hung Cheng; Tseng, Yen Chun; Chyi, Jen Inn; Lee, Chia Ming

376

Photodiode characteristics and band alignment parameters of epitaxial Al0.5Ga0.5P  

E-Print Network (OSTI)

Photodiode characteristics and band alignment parameters of epitaxial Al0.5Ga0.5P An Chen1,a-bandgap semiconductor AlxGa1-xP is a promising material candidate for low-noise photodiodes in blue/UV spectrum. Photodiodes were fabricated on Al0.5Ga0.5P epitaxial layer grown lattice matched on GaP substrate by molecular

Woodall, Jerry M.

377

IEEE PHOTONICS TECHNOLOGY LETTERS 1 High-Power 2.3-m GaSb-Based Linear Laser Array  

E-Print Network (OSTI)

2.3-m laser. Al Ga As Sb cladding layers. Details of the lasers' heterostructure design can be foundIEEE PHOTONICS TECHNOLOGY LETTERS 1 High-Power 2.3-m GaSb-Based Linear Laser Array L. Shterengas, G--High-power 2.3- m In(Al)GaAsSb­GaSb type-I double quantum-well diode laser arrays were fabricated

378

TSNo s02-roberts104537-O Microscopic and Spectroscopic Speciation of Ni in Soils in the Vicinity of a Ni Refinery.  

E-Print Network (OSTI)

in the Vicinity of a Ni Refinery. abstract Accurately predicting the fate and bioavailability of metals in smelter REFINERY ASA-CSSA-SSSA Annual Meetings - October 21 - 25, 2001 - Charlotte, NC #12;

Sparks, Donald L.

379

Self-assembly of Ni nanocrystals on HfO{sub 2} and N-assisted Ni confinement for nonvolatile memory application  

SciTech Connect

We demonstrate memory property using Ni nanocrystals with mean diameter of 9 nm embedded in HfO{sub 2} high-k dielectric that are formed via a self-assembly process by sputtering and rapid thermal annealing. X-ray photoelectron spectroscopy shows that Ni penetrates into the 5 nm HfO{sub 2} after high temperature annealing above 800 deg. C in N{sub 2}. However, the diffusion is suppressed by N incorporation into HfO{sub 2} by NH{sub 3} annealing. Metal-oxide-semiconductor structures were fabricated with Ni nanocrystals embedded in HfO{sub 2}. An additional counterclockwise hysteresis of 2.1 V due to the charge trapping properties of the Ni nanocrystals was observed from a {+-}5 V sweep during capacitance-voltage electrical measurement.

Tan, Zerlinda; Samanta, S.K.; Yoo, Won Jong; Lee, Sungjoo [Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)

2005-01-03T23:59:59.000Z

380

Verification of Ni magnetic moment in GdNi2 Laves phase by magnetic circular dichroism measurement  

Science Journals Connector (OSTI)

Investigation of the magnetic moment of nickel in the polycrystal GdNi2 Laves phase was carried out by means of magnetic circular dichroism (MCD) in the core-level x-ray-absorption spectroscopy. It was revealed that the nickel magnetic moment originating from the 3d state (band) does exist and couples antiparallel to that of gadolinium whose MCD was observed at the M4,5 absorption edge. That is, nickel retains an intrinsic magnetic moment even in the Laves phase concentration. Furthermore, by analyzing in terms of sum rule, the contribution of spin and orbital magnetic moments to the magnetic moment was evaluated and discussed.

M. Mizumaki; K. Yano; I. Umehara; F. Ishikawa; K. Sato; A. Koizumi; N. Sakai; T. Muro

2003-04-09T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Analyzing the Performance of a Multiobjective GA-P Algorithm for Learning Fuzzy Queries in  

E-Print Network (OSTI)

Analyzing the Performance of a Multiobjective GA-P Algorithm for Learning Fuzzy Queries in a Machine Learning Environment Oscar Cord´on1 , Enrique Herrera-Viedma1 , Mar´ia Luque1 , F´elix de Moya2- tionary algorithms (EAs) [1], such as genetic algorithm-programming (GA-P) [11] or simulated annealing

Fernandez, Thomas

382

Modeling of InAs/GaAs Quantum Dot Solar Cells  

Science Journals Connector (OSTI)

This paper reports electrical characteristics of an intermediate band p-i-n GaAs solar cell with InAs quantum dots embedded in the intrinsic region using Synopsis TCAD simulation tools. Up to five layers of quantum dots have been taken into consideration ... Keywords: Quantum dots, Intermediate band, InAs, GaAs, Solar Cells, TCAD

Ayman Rizk; Kazi Islam; Ammar Nayfeh

2013-11-01T23:59:59.000Z

383

2=picosecond, GaAs photodiode optoelectronic circuit for optical correlation applications  

E-Print Network (OSTI)

2=picosecond, GaAs photodiode optoelectronic circuit for optical correlation applications K. D. Li GaAs Schottky photodiode is monolithically integrated with a microwave detector. By using this new optoelectronic circuit.in place of a nonlinear crystal in an optical correlation setup, the high-speed photodiode

Ozbay, Ekmel

384

Ultralow noise midwave infrared InAsGaSb strain layer superlattice avalanche photodiode  

E-Print Network (OSTI)

Ultralow noise midwave infrared InAs­GaSb strain layer superlattice avalanche photodiode InAs­GaSb strain layer superlattice p+ -n- -n homojunction avalanche photodiodes APDs grown by solid characteristics. © 2007 American Institute of Physics. DOI: 10.1063/1.2817608 Photodiodes operating in the eye

Krishna, Sanjay

385

14 MHz rate photon counting with room temperature InGaAs/InP avalanche photodiodes  

E-Print Network (OSTI)

14 MHz rate photon counting with room temperature InGaAs/InP avalanche photodiodes PAUL L. VOSS based on InGaAs/InP avalanche photodiodes for use at 1.55 mm wavelength. Operation at room temperature at the above wavelengths for conventional high light-level measurements with PIN or ava- lanche photodiodes

Köprülü, Kahraman Güçlü

386

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells  

E-Print Network (OSTI)

Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells O. Lundberga,*, J. Lua , A. Rockettb , M. Edoffa , L. Stolta a A°ngstro¨m Solar Center, Uppsala University, P.O. Box 534, SE-751 21 Abstract The diffusion of indium and gallium in polycrystalline thin film Cu(In,Ga)Se2 layers has been

Rockett, Angus

387

Resonant Raman scattering in an InAs/GaAs monolayer structure  

E-Print Network (OSTI)

), embedded in bulklike GaAs with two Al- GaAs cladding layers forming a waveguide. The InAs- mono- layer system used. Raman spectra were excited with a Ti-Sapphire laser, tuned from 1.41 eV to 1.435 e

Nabben, Reinhard

388

Electro-optic imagery of high-voltage GaAs photoconductive switches  

SciTech Connect

The authors present electro-optic images of GaAs high-voltage photoconductive switches utilizing the electro-optic effect of the semi-insulating GaAs substrate. Experimental methodology for obtaining the images is described along with a self-calibrating data reduction algorithm. Use of the technique for observing fabrication defects is shown.

Falk, R.A.; Adams, J.C.; Capps, C.D.; Ferrier, S.G.; Krinsky, J.A. (Boeing Defense and Space Group, Seattle, WA (United States))

1995-01-01T23:59:59.000Z

389

Variation of lattice constant and cluster formation in GaAsBi  

SciTech Connect

We investigate the structural properties of GaAsBi layers grown by molecular beam epitaxy on GaAs at substrate temperatures between 220–315 °C. Irrespective of the growth temperature, the structures exhibited similar Bi compositions, and good overall crystal quality as deduced from X-Ray diffraction measurements. After thermal annealing at temperatures as low as 500 °C, the GaAsBi layers grown at the lowest temperatures exhibited a significant reduction of the lattice constant. The lattice variation was significantly larger for Bi-containing samples than for Bi-free low-temperature GaAs samples grown as a reference. Rutherford backscattering spectrometry gave no evidence of Bi diffusing out of the layer during annealing. However, dark-field and Z-contrast transmission electron microscopy analyses revealed the formation of GaAsBi clusters with a Bi content higher than in the surrounding matrix, as well as the presence of metallic As clusters. The apparent reduction of the lattice constant can be explained by a two-fold process: the diffusion of the excess As incorporated within As{sub Ga} antisites to As clusters, and the reduction of the Bi content in the GaAs matrix due to diffusion of Bi to GaAsBi clusters. Diffusion of both As and Bi are believed to be assisted by the native point defects, which are present in the low-temperature as-grown material.

Puustinen, J.; Schramm, A.; Guina, M. [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FI-33101 Tampere (Finland)] [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FI-33101 Tampere (Finland); Wu, M.; Luna, E. [Paul-Drude Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)] [Paul-Drude Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany); Laukkanen, P. [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland)] [Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Laitinen, M.; Sajavaara, T. [Department of Physics, University of Jyväskylä, P.O. Box 35, FI-40014 Jyväskylä (Finland)] [Department of Physics, University of Jyväskylä, P.O. Box 35, FI-40014 Jyväskylä (Finland)

2013-12-28T23:59:59.000Z

390

ORIGINAL ARTICLE Highly efficient GaAs solar cells by limiting light emission  

E-Print Network (OSTI)

ORIGINAL ARTICLE Highly efficient GaAs solar cells by limiting light emission angle Emily D Kosten1 solar cell under direct sunlight, light is received from the solar disk, but is re-emitted isotropically.1038/lsa.2013.1; published online 4 January 2013 Keywords: detailed balance; GaAs solar cell; light

Atwater, Harry

391

Plasmonic nanoparticle enhanced light absorption in GaAs solar cells Keisuke Nakayama,a  

E-Print Network (OSTI)

Plasmonic nanoparticle enhanced light absorption in GaAs solar cells Keisuke Nakayama,a Katsuaki 22 September 2008 We demonstrate an improvement in efficiency of optically thin GaAs solar cells-ratio nanoparticles effectively increases the optical path of the incident light in the absorber layers resulting

Atwater, Harry

392

Calculated spin polarization of field-assisted GaAs electron source  

Science Journals Connector (OSTI)

Calculations are reported showing that for the field-assisted GaAs NEA photocathode, the spin polarization of emitted electrons can be 3.6 times higher than for non-field GaAs sources. The reason for this is that...

B. Yang; V. Guidi; L. Tecchio

1993-02-01T23:59:59.000Z

393

Coupling of nitrogen-vacancy centers in diamond to a GaP waveguide  

E-Print Network (OSTI)

The optical coupling of guided modes in a GaP waveguide to nitrogen-vacancy (NV) centers in diamond is demonstrated. The electric field penetration into diamond and the loss of the guided mode are measured. The results indicate that the GaP-diamond system could be useful for realizing coupled microcavity-NV devices for quantum information processing in diamond.

K. -M. C. Fu; C. Santori; P. E. Barclay; I. Aharonovich; S. Prawer; N. Meyer; A. M. Holm; R. G. Beausoleil

2008-11-03T23:59:59.000Z

394

Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part II. InP, InSb, InGaP and InGaAs  

SciTech Connect

A parametric study of Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs has been carried out in IC1/Ar and IBr/Ar chemistries. Etch rates in excess of 3.1 prrdmin for InP, 3.6 prnh-nin for InSb, 2.3 pm/min for InGaP and 2.2 ~rrdmin for InGaAs were obtained in IBr/Ar plasmas. The ICP etching of In-based materials showed a general tendency: the etch rates increased substantially with increasing the ICP source power and rf chuck power in both chemistries, while they decreased with increasing chamber pressure. The IBr/Ar chemistry typically showed higher etch rates than IC1/Ar, but the etched surface mophologies were fairly poor for both chemistries.

Abernathy, C.R.; Cho, H.; Hahn, Y.B.; Hays, D.C.; Hobson, W.S.; Jung, K.B.; Lambers, E.S.; Pearton, S.J.; Shul, R.J.

1998-11-23T23:59:59.000Z

395

Strain modified/enhanced ferromagnetism in Mn{sub 3}Ge{sub 2} thin films on GaAs(001) and GaSb(001)  

SciTech Connect

Ferromagnetic Mn{sub 3}Ge{sub 2} thin films were successfully grown on GaAs(001) and GaSb(001) substrates using molecular beam epitaxy. The results of our work revealed that the substrate facilitates to modify magnetic and electrical properties of Mn{sub 3}Ge{sub 2} films due to tensile/compressive strain effect between films and substrates. The characteristic spin-flopping transition at around 150 K for the bulk Mn{sub 3}Ge{sub 2} disappeared completely for both samples. The antiferromagnetism below 150 K changed to ferromagnetism and retained above room temperature. The saturation magnetization was found to be 0.23 and 1.32 {mu}{sub B}/Mn atom at 10 K for the samples grown on GaSb(001) and GaAs(001), respectively.

Dang Duc Dung; Duong Van Thiet [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet Road, Ha Noi (Viet Nam); Feng Wuwei; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Park, In-Sung [Department of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Bo Lee, Sung [Department of Materials Science and Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of)

2013-04-21T23:59:59.000Z

396

Suppression of carbon formation in steam reforming of methane by addition of Co into Ni/ZrO2 catalysts  

Science Journals Connector (OSTI)

We investigated the steam reforming of methane (SRM) over various NiCo bimetallic catalysts...2...to determine whether the addition of Co on the Ni catalyst suppressed carbon formation. The effect of metal loadin...

Dasika Harshini; Yongchai Kwon; Jonghee Han…

2010-03-01T23:59:59.000Z

397

Influence of the magnetic phase transition on secondary ion emission from disordered Ni-Pd compounds of various compositions  

Science Journals Connector (OSTI)

Variations in secondary ion emission (SIE) from polycrystals of ferromagnetic disordered Ni-Pd compounds irradiated by argon ions with energy of 10 keV are studied experimentally. A considerable reduction in Ni+ ...

K. F. Minnebaev; K. A. Tolpin…

2012-05-01T23:59:59.000Z

398

The Influence of Ni-Coated TiC on Laser-Deposited IN625 Metal Matrix Composites  

E-Print Network (OSTI)

The In?uence of Ni-Coated TiC on Laser-Deposited IN625 Metalwith Ni-coated and uncoated TiC reinforcement particles toand spatial distribution of TiC particles in the deposited

2010-01-01T23:59:59.000Z

399

LONG EXTREMAL RAYS AND SYMPLECTIC RESOLUTIONS N.I. Shepherd--Barron  

E-Print Network (OSTI)

LONG EXTREMAL RAYS AND SYMPLECTIC RESOLUTIONS N.I. Shepherd--Barron DPMMS, Cambridge University, 16 double points (RDPs) to higher dimen­ sions. 1 #12; 2 N.I. SHEPHERD--BARRON Theorem 2.1. Suppose that f components are quasi--projective. If A; B are closed subschemes of X; Y respectively, then Mor(X; Y ; A; B

Shepherd-Barron, Nick

400

Microstructural Degradation of Ni-YSZ Anodes for Solid Oxide Fuel  

E-Print Network (OSTI)

Microstructural Degradation of Ni- YSZ Anodes for Solid Oxide Fuel Cells Karl Thydén Risø-PhD-32(EN 2008 #12;Author: Karl Thydén Title: Microstructural Degradation of Ni-YSZ Anodes for Solid Oxide Fuel Cells Department: Fuel Cells and Solid State Chemistry Department Risø-PhD-32(EN) March 2008 This thesis

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Characterization of the Ni-Cr Alloy Prepared by Laser Cladding Method  

Science Journals Connector (OSTI)

The laser cladding Ni-Cr alloy was prepared by adding nickel coated chromium composite powders on the surface of 45 steel using the laser cladding method. The component and microstructure were investigated by EDS, SEM, and HRTEM. The results show that ... Keywords: Ni-Cr alloy, laser cladding, characterization

Rui Yang; Dongjian Gao; Zhijia Qu

2012-07-01T23:59:59.000Z

402

Glass Forming Ability in Pr-(Cu, Ni)-Al Alloys  

E-Print Network (OSTI)

Glass forming ability (GFA) in the Pr-rich Pr-(Cu, Ni)-Al alloys at or near the eutectic points was systematically studied. It was found that the GFA in the pseudo-ternary alloys of Pr-(Cu, Ni)-Al is higher than that of ...

Zhang, Yong

403

Thermal analysis of nickel/metal (Ni/MH) hydride battery during charge cycle  

Science Journals Connector (OSTI)

A three-dimensional mathematical model containing temporal and spatial coordinates is presented for analyzing the thermal behavior and obtaining the internal temperature profile of cylindrical Ni/MH battery. This model is performed to investigate the ... Keywords: Ni/MH battery, charge, heat transfer coefficient, thermal analysis

Nabi Jahantigh; Ebrahim Afsharia

2008-02-01T23:59:59.000Z

404

Ni-dispersed fullerenes: Hydrogen storage and desorption properties Weon Ho Shin and Seong Ho Yang  

E-Print Network (OSTI)

Ni-dispersed fullerenes: Hydrogen storage and desorption properties Weon Ho Shin and Seong Ho Yang could be viable alternatives to reversible hydrogen storage. It is demonstrated that a single Ni coated-dispersed fullerenes are considered to be the novel hydrogen storage media capable of storing 6.8 wt % H2, thus

Goddard III, William A.

405

Oxygen driven reconstruction dynamics of Ni,,977... measured by time-lapse scanning tunneling microscopy  

E-Print Network (OSTI)

Oxygen driven reconstruction dynamics of Ni,,977... measured by time-lapse scanning tunneling-lapse scanning tunneling microscopy STM has been used to observe the oxygen induced reconstruction behavior of Ni for the merging of steps in the presence of small amounts of adsorbed oxygen, less than 2% of a monolayer. Point

Sibener, Steven

406

Robert S. Boyd William J. Moar The defensive function of Ni in plants  

E-Print Network (OSTI)

Robert S. Boyd á William J. Moar The defensive function of Ni in plants: response- gens (Boyd and Martens 1992). By manipulating soil metal content to produce high- and low-metal plants, Boyd and Martens (1994) demonstrated acute toxicity of high-metal leaves of the Ni hyperaccumulator Thl

Boyd, Robert S.

407

Atomic data and spectral line intensities for Ni XVII  

SciTech Connect

Electron impact collision strengths, energy levels, oscillator strengths, and spontaneous radiative decay rates are calculated for Ni XVII. We include in the calculations the 23 lowest configurations, corresponding to 159 fine-structure levels: 3l3l', 3l4l'', and 3s5l''', with l, l' = s, p, d, l'' = s, p, d, f, and l''' = s, p, d. Collision strengths are calculated at five incident energies for all transitions at varying energies above the threshold of each transition. One additional energy, very close to the threshold of each transition, has also been included. Calculations have been carried out using the Flexible Atomic Code in the distorted wave approximation. Additional calculations have been performed with the University College London suite of codes for comparison. Excitation rate coefficients are calculated as a function of electron temperature by assuming a Maxwellian electron velocity distribution. Using the excitation rate coefficients and the radiative transition rates of the present work, statistical equilibrium equations for level populations are solved at electron densities covering the range of 10{sup 8} - 10{sup 14} cm{sup -3} and at an electron temperature of log T{sub e}(K) = 6.5, corresponding to the maximum abundance of Ni XVII. Spectral line intensities are calculated, and their diagnostic relevance is discussed. This dataset will be made available in the next version of the CHIANTI database.

Bhatia, A.K. [NASA/Goddard Space Flight Center, Greenbelt, MD 20771 (United States); Landi, E., E-mail: elandi@umich.ed [Naval Research Laboratory, Washington, DC 20375 (United States); University of Michigan, Ann Arbor, MI 48109 (United States)

2011-05-15T23:59:59.000Z

408

Electric Automobile Ni-MH Battery Investigation in Diverse Situations  

Science Journals Connector (OSTI)

Abstract The electronic differential system ensures the robust control of the vehicle comportment on the road. This paper focuses Ni-MH Battery controlled by Buck Boost DC-DC converter power supply for EV. Sliding mode control based on space vector modulation (SVM-SMC) is proposed to achieve the tow rear driving wheel control. The performances of the proposed strategy controller give a satisfactory simulation results. The proposed control law increases the utility EV autonomous under several speed variations. Moreover, the future industrial's vehicle must take into considerations the battery material choice into design steps. The battery material model choice is a crucial item, and thanks to an increasing emphasis on vehicle range and performance, the Ni-MH battery could become a viable candidate that's our proposal battery model in the present work, in this way the present paper show a novel strategy of electric automobile (EA) power electronics studies when the current battery take into account the impact of the sliding mode control based onspace vector machine technique in the several speed variations using the primitive battery SOC of 60% state.

Brahim Mebarki; Belkacem Draoui; Lakhdar Rahmani; Boumediène Allaoua

2013-01-01T23:59:59.000Z

409

Low-temperature magnetization of (Ga,Mn) As semiconductors  

E-Print Network (OSTI)

der Laan,8 C. T. Foxon,2 and B. L. Gallagher2 1Institute of Physics ASCR, Cukrovarnick? 10, 162 53 Praha 6, Czech Republic 2School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom 3Institute of Physics ASCR, Na... is organized as follows. In Sec. II we identify the key physical considerations related to ground-state mag- netization of #1;Ga,Mn#2;As ferromagnets by focusing first on a single Mn#1;d5+hole#2; complex and approximating the total magnetization...

Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL.

2006-01-01T23:59:59.000Z

410

Theory of weak localization in ferromagnetic (Ga,Mn)As  

E-Print Network (OSTI)

&M University, College Station, Texas 77843-4242, USA 3Institute of Physics, ASCR, v.v.i., Cukrovarnicka 10, 162 53 Praha 6, Czech Republic 4School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom #1;Received 27 November.... Unlike earlier theoretical work15,16 which ad- dressed quantum interference in ferromagnets, we focus our study on a four-band model which is directly relevant to the valence bands of #1;Ga,Mn#2;As. We demonstrate that the quan- tum interference...

Garate, Ion; Sinova, Jairo; Jungwirth, T.; MacDonald, A. H.

2009-01-01T23:59:59.000Z

411

Magnetization relaxation in (Ga,Mn)As ferromagnetic semiconductors  

E-Print Network (OSTI)

- Magnetization relaxation in ?Ga,M Jairo Sinova,1 T. Jungwirth,2,3 X. Liu,4 Y. Sasaki,4 J. K 1Department of Physics, Texas A&M Universit 2Institute of Physics ASCR, Cukrovarnick 3Department of Physics, University of Texa 4Department of Physics, University... is currently the focus of a considerable experimental16 and theoretical17 research. Spin-transfer switching has not yet been demonstrated in all-semiconductor systems, but the effect promises to have a richer phenomenology in this case because...

Sinova, Jairo; Jungwirth, T.; Liu, X.; Sasaki, Y.; Furdyna, JK; Atkinson, WA; MacDonald, AH.

2004-01-01T23:59:59.000Z

412

Quantum effects in electron beam pumped GaAs  

SciTech Connect

Propagation of waves in nano-sized GaAs semiconductor induced by electron beam are investigated. A dispersion relation is derived by using quantum hydrodynamics equations including the electrons and holes quantum recoil effects, exchange-correlation potentials, and degenerate pressures. It is found that the propagating modes are instable and strongly depend on the electron beam parameters, as well as the quantum recoil effects and degenerate pressures. The instability region shrinks with the increase of the semiconductor number density. The instability arises because of the energetic electron beam produces electron-hole pairs, which do not keep in phase with the electrostatic potential arising from the pair plasma.

Yahia, M. E. [Faculty of Engineering, The British University in Egypt (BUE), El-Shorouk City, Cairo (Egypt) [Faculty of Engineering, The British University in Egypt (BUE), El-Shorouk City, Cairo (Egypt); National Institute of Laser Enhanced Sciences (NILES), Cairo University (Egypt); Azzouz, I. M. [National Institute of Laser Enhanced Sciences (NILES), Cairo University (Egypt)] [National Institute of Laser Enhanced Sciences (NILES), Cairo University (Egypt); Moslem, W. M. [Department of Physics, Faculty of Science, Port Said University, Port Said (Egypt)] [Department of Physics, Faculty of Science, Port Said University, Port Said (Egypt)

2013-08-19T23:59:59.000Z

413

Exciton front propagation in photoexcited GaAs quantum wells  

Science Journals Connector (OSTI)

We report on the study of spatiotemporal self-organization of carriers in photoexcited GaAs quantum wells. Propagating interfaces between electron-rich and hole-rich regions are seen as expanding and collapsing exciton rings in exciton emission patterns. The interfaces preserve their integrity during expansion, remaining as sharp as in the steady state, which indicates that the dynamics is controlled by carrier transport. The front propagation velocity is measured and compared to theoretical model. The measurements of expanding and collapsing exciton rings afford a contactless method for probing the electron and hole transport.

Sen Yang, L. V. Butov, L. S. Levitov, B. D. Simons, and A. C. Gossard

2010-03-16T23:59:59.000Z

414

IEEE ELECTRON DEVICE LETTERS, VOL. 30, NO. 6, JUNE 2009 593 GaAs MESFET With a High-Mobility  

E-Print Network (OSTI)

systems, including InGaAs [4], CdS [5], ZnO [6], and GaN [7]. To the best of our knowledge FET (MESFET) fabricated with an intentionally doped n-type planar GaAs NW channel grown on a semi

Li, Xiuling

415

Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect  

E-Print Network (OSTI)

fields on optical prop- erties in the cases of GaInAs/GaAs QWs2 and CdS/CdSe superlattices4 on GaAs 111 MOVPE . The total un- doped region sandwiched by n and p layers is 51 nm. The carrier concentrations

Wetzel, Christian M.

416

Enhanced Performance of Small GaAs Solar Cells via Edge and Surface Passivation with Trioctylphosphine Sulfide  

E-Print Network (OSTI)

Enhanced Performance of Small GaAs Solar Cells via Edge and Surface PassivationAs solar cells. Photoluminescence (PL) measurements indicate monolayers of TOP:S on GaAs significantly" GaAs solar cell (0.31 mm2 ) to test its ability to passivate devices with the relevant dimensions

Atwater, Harry

417

Intrinsic vacancy induced nanoscale wire structure in heteroepitaxial Ga2Se3/Si(001) Taisuke Ohta,1,  

E-Print Network (OSTI)

Intrinsic vacancy induced nanoscale wire structure in heteroepitaxial Ga2Se3/Si(001) Taisuke Ohta,1-blende structure of -Ga2Se3, which contains ordered 110 arrays of Ga vacancies. These ordered vacancy lines structural vacancies of semiconducting chalcogenides lead to numerous interesting structural, electronic

Olmstead, Marjorie

418

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE  

NLE Websites -- All DOE Office Websites (Extended Search)

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE Identification of the Parasitic Chemical Reactions during AlGaN OMVPE by J. R. Creighton, M. E. Coltrin, and W. G. Breiland Motivation-GaN and AlGaN alloys are ex- tremely important materials with widespread applications for optoelectronics (e.g. solid state lighting) and high power electronics. Or- ganometallic vapor phase epitaxy (OMVPE) is the primary deposition methodology, but it suf- fers from several growth chemistry anomalies. Growth rate and alloy composition are often a sensitive function of temperature and other reac- tor variables. These factors make the AlGaN OMVPE process difficult to control and in- crease the cost of the material. Conventional wisdom has been that the non-ideal OMVPE behavior is due to parasitic "pre-reactions" be-

419

Enhanced photoelectrochemical responses of ZnO films through Ga and N codoping  

SciTech Connect

We report on the crystallinity and photoelectrochemical (PEC) response of ZnO thin films codoped by Ga and N. The ZnO:(Ga,N) thin films were deposited by cosputtering at room temperature and followed by postannealing at 500 deg. C in air for 2 h. We found that ZnO:(Ga,N) thin films exhibited significantly enhanced crystallinity compared to ZnO doped solely with N at the same growth conditions. Furthermore, ZnO:(Ga,N) thin films exhibited enhanced N incorporation over ZnO doped solely with N at high temperatures. As a result, ZnO:(Ga,N) thin films achieved dramatically improved PEC response, compared to ZnO thin films doped solely with N at any conditions. Our results suggest a general way to improve PEC response for wide-band-gap oxides.

Ahn, Kwang-Soon; Yan, Yanfa; Shet, Sudhakar; Deutsch, Todd; Turner, John; Al-Jassim, Mowafak [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

2007-12-03T23:59:59.000Z

420

Infrared spectroscopy of amorphous hydrogenated GaAs: Evidence for H bridges  

Science Journals Connector (OSTI)

The infrared absorption spectra of hydrogenated amorphous GaAs show two prominent hydrogen-related bands at 530 and 1460 cm-1. These bands are very broad and they amount to most of the hydrogen-induced infrared absorption. The remaining structures are a number of comparatively sharp lines which we interpret as Ga-H and As-H modes in partial agreement with earlier investigations. We argue that the broad bands arise from near-stretching (1460 cm-1) and from wagging (530 cm-1) vibrations of H atoms situated in bridging positions between two Ga atoms. This assignment is supported by similar bands in Al-H polymers, a-GaP: H, and a-GaSb: H. A model calculation of the mode frequencies is also presented.

Z. P. Wang; L. Ley; M. Cardona

1982-09-15T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

In situ chemical sensing in AlGaN/GaN high electron mobility transistor metalorganic chemical vapor deposition process for real-time  

E-Print Network (OSTI)

; accepted 14 June 2005; published 18 July 2005 Gallium nitride and its alloys promise to be key materials.1116/1.1993616 I. INTRODUCTION In recent years, gallium-nitride GaN - and aluminum- gallium-nitride AlGaN -based are grown at high temperatures e.g., up to 1100 °C using large concentrations of H2 carrier and NH3 N source

Rubloff, Gary W.

422

Oddelek za fiziko Seminar Ia -1. letnik, II. stopnja  

E-Print Network (OSTI)

the whole history, the mankind has been facing problems of energy sufficiency and efficiency. Nowadays, when is solar power. The energy of solar photons has already been implemented in solar cells generating electrical energy. But solar energy can be used directly to produce heat and drive a generator as well

Â?umer, Slobodan

423

Oddelek za ziko Normal modes in the atmosphere  

E-Print Network (OSTI)

weather prediction. In section 3 I concentrate on the normal modes of a very simple model, shallow water #12;Numerical weather prediction is an initial condition problem. That means we need ini- tial-gravity waves just play their role, but in numerical models of the atmosphere, they can cause huge problems. 1

Â?umer, Slobodan

424

Univerza v Ljubljani Fakulteta za matematiko in fiziko  

E-Print Network (OSTI)

Author: Petra Smitek Mentor: doc. dr. Andreja Gomboc Ljubljana, October 2014 Abstract Gamma ray bursts. In this seminar, basic properties of gamma ray burst are given. The exceptionally bright gamma ray burst GRB GRB and SN . . . . . . . . . . . . . . . . . . 8 4 Conclusion 11 1 Introduction Gamma ray bursts (GRB

Â?umer, Slobodan

425

Za?etne opombe k laringalizaciji v slovenš?ini  

E-Print Network (OSTI)

bilo odvisno od slede?ega segmen- ta: foneti?na realizacija je verjetnejša, ?e sledi beseda na samoglasnik ali zvo?nik (ana- lizira skupaj 22 primerov, laringalizacija je prisotna v 8, [?] pa v 4; n. d., 29). Glotalni zapornik se (lahko) pojavlja tudi... laringalizacija med 580 in 630 ms. Prikaz 7?: [?bu?k h ??] (nestandardno, govorka 01zn). Laringalizacija vidna po pribl. 420 ms. Slovenski jezik – Slovene Linguistic Studies 5 (2005) 148 Prikaz 7d: (Vi ke)pate [pat?] (govorka 04zt). Laringalizacija vidna...

Jurgec, Peter

2005-01-01T23:59:59.000Z

426

Mass Measurements of Proton-Rich Nuclei Fe-50 and Ni-54  

E-Print Network (OSTI)

, and target thicknesses determined the Q-value scales shown in Fig. 2. The resulting Q values and mass excesses (all in MeV) are Q("Fe) =-50..95+0.06, M(SOFe) =-34.48+0.06 and Q("Ni) = -50.19+0.05, M("Ni) =-39.21 +0.05, with the mass results based on a... Station, Texas 77843 {Received 6 December 1976) The reactions "Fe{'He,'He)' Fe and "Ni{'He,'He)"Ni have been observed at an incident a energy of 110 MeV. The reaction Q values are found to be Q{ Fe) = ?50.95 + 0.06 MeV and Q{' Ni) = ?50.19 + 0.05 Me...

Tribble, Robert E.; Cossairt, J. D.; May, D. P.; Kenefick, R. A.

1977-01-01T23:59:59.000Z

427

Effect of hydrogenation on magnetic and electronic behaviour of Pr-Ni  

SciTech Connect

Magnetic and electronic properties of PrNi and PrNi-H have been investigated by using first principles approach. The ground state of both the compounds is base-centered orthorhombic CrB structure. Calculations are performed using full potential linearized augmented plane wave plus local orbitals (FP-L/APW) method including spin-polarization within the frame work of density functional theory (DFT). The electronic exchange-correlation energy is described by generalized gradient approximation (GGA). The hydrogen stored in PrNi, i.e., PrNi-H has been studied to analyze the effective changes in magnetic moments and electronic structures in comparison to PrNi. A comparative study of the density of states in both the compounds has also been presented.

Rana, Pooja, E-mail: poojafizix@yahoo.com; Singh, Sanjay K., E-mail: poojafizix@yahoo.com; Verma, U. P., E-mail: poojafizix@yahoo.com [School of Studies in Physics, Jiwaji University, Gwalior-474011 (India)

2014-04-24T23:59:59.000Z

428

Orbital Degeneracy Removed by Charge Order in Triangular Antiferromagnet AgNiO{sub 2}  

SciTech Connect

We report a high-resolution neutron diffraction study on the orbitally degenerate spin-1/2 hexagonal metallic antiferromagnet AgNiO{sub 2}. A structural transition to a tripled unit cell with expanded and contracted NiO{sub 6} octahedra indicates {radical}(3)x{radical}(3) charge order on the Ni triangular lattice. This suggests charge order as a possible mechanism of lifting the orbital degeneracy in the presence of charge fluctuations, as an alternative to the more usual Jahn-Teller distortions. A novel magnetic ground state is observed at low temperatures with the electron-rich S=1 Ni sites arranged in alternating ferromagnetic rows on a triangular lattice, surrounded by a honeycomb network of nonmagnetic and metallic Ni ions. We also report first-principles band-structure calculations that explain microscopically the origin of these phenomena.

Wawrzynska, E.; Coldea, R. [H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Wheeler, E. M. [Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU (United Kingdom); Institute Laue-Langevin, B.P. 156, 38042 Grenoble Cedex 9 (France); Mazin, I. I.; Johannes, M. D. [Code 6393, Naval Research Laboratory, Washington, D.C. 20375 (United States); Soergel, T.; Jansen, M. [Max-Planck Institut fuer Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart (Germany); Ibberson, R. M.; Radaelli, P. G. [ISIS Facility, Rutherford Appleton Laboratory, Chilton, Didcot OX11 0QX (United Kingdom)

2007-10-12T23:59:59.000Z

429

Magnetism of NiMn2O4-Fe3O4 spinel interfaces  

SciTech Connect

We investigate the magnetic properties of the isostructural spinel-spinel interface of NiMn{sub 2}O{sub 4}(NMO)-Fe{sub 3}O{sub 4}. Although the magnetic transition temperature of the NMO film is preserved, both bulk and interface sensitive measurements demonstrate that the interface exhibits strong interfacial magnetic coupling up to room temperature. While NMO thin films have a ferrimagnetic transition temperature of 60 K, both NiFe{sub 2}O{sub 4} and MnFe{sub 2}O{sub 4} are ferrimagnetic at room temperature. Our experimental results suggest that these magnetic properties arise from a thin interdiffused region of (Fe,Mn,Ni){sub 3}O{sub 4} at the interface, leading to Mn and Ni magnetic properties similar to those of MnFe{sub 2}O{sub 4} and NiFe{sub 2}O{sub 4}.

Arenholz, Elke; Nelson-Cheeseman, B. B.; Chopdekar, R. V.; Bettinger, J. S.; Arenholz, E.; Suzuki, Y.

2007-09-13T23:59:59.000Z

430

PII S0016-7037(99)00244-6 The role of Al in the formation of secondary Ni precipitates  

E-Print Network (OSTI)

is dissolved from the sorbent and substitutes for Ni in brucite-like hydroxide layers of the newly forming

Sparks, Donald L.

431

Microstructure and thermal conductivity of surfactant-free NiO nanostructures  

SciTech Connect

High purity, nanometer sized surfactant-free nickel oxide (NiO) particles were produced in gram scale using a solution combustion method and characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), gas pycnometry and gas adsorption analysis (BET). The average particle size of the as-synthesized NiO increases significantly with the preheating temperature of the furnace, while the specific surface area decreases. A BET specific surface area of {approx}100 m{sup 2}/g was obtained for NiO nanoparticles with size as small as 3 nm synthesized at 300 Degree-Sign C. The thermal conductivity ({kappa}) of pressed pellets of the synthesized NiO nanoparticles obtained using spark plasma sintering (SPS) and uniaxial hot pressing is drastically decreased ({approx}60%) compared to that of NiO single crystal. This strong reduction in {kappa} with particle size suggests the suitability of the synthesized surfactant-free NiO nanoparticles for use as nanoinclusions when designing high performance materials for waste heat recovery. - Graphical abstract: Highly efficient phonon scattering by surfactant-free NiO nanostructures obtained by solution combustion of a mixture of nickel (II) nitrate hexahydrate (oxidizer) and urea (fuel) at various temperatures. Highlights: Black-Right-Pointing-Pointer Fast synthesis of surfactant-free NiO nanoparticles with controllable size. Black-Right-Pointing-Pointer High specific surface area for NiO nanoparticles with size range from 3 to 7 nm. Black-Right-Pointing-Pointer Strong reduction of the thermal conductivity with decreasing particle size. Black-Right-Pointing-Pointer NiO as nanoinclusions in high performance materials for energy conversion.

Sahoo, Pranati [Laboratory for Emerging Energy and Electronic Materials, Materials Science and Engineering Department, University of Michigan, Ann Arbor, MI 48109 (United States); Department of Chemistry, University of New Orleans, New Orleans, LA 70148 (United States); Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148 (United States); Misra, Dinesh K. [The Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148 (United States); Salvador, Jim [Chemical Sciences and Materials Systems Laboratory, General Motors R and D Center, Warren, MI 48090 (United States); Makongo, Julien P.A. [Laboratory for Emerging Energy and Electronic Materials, Materials Science and Engineering Department, University of Michigan, Ann Arbor, MI 48109 (United States); Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148 (United States); Chaubey, Girija S. [Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148 (United States); Takas, Nathan J. [Laboratory for Emerging Energy and Electronic Materials, Materials Science and Engineering Department, University of Michigan, Ann Arbor, MI 48109 (United States); Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148 (United States); Wiley, John B. [Department of Chemistry, University of New Orleans, New Orleans, LA 70148 (United States); Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148 (United States); Poudeu, Pierre F.P., E-mail: ppoudeup@umich.edu [Laboratory for Emerging Energy and Electronic Materials, Materials Science and Engineering Department, University of Michigan, Ann Arbor, MI 48109 (United States); Department of Chemistry, University of New Orleans, New Orleans, LA 70148 (United States); Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148 (United States)

2012-06-15T23:59:59.000Z

432

Development of FeNiMoB thin film materials for microfabricated magnetoelastic sensors  

SciTech Connect

Metglas{sup TM} 2826MB foils of 25-30 {mu}m thickness with the composition of Fe{sub 40}Ni{sub 38}Mo{sub 4}B{sub 18} have been used for magnetoelastic sensors in various applications over many years. This work is directed at the investigation of {approx}3 {mu}m thick iron-nickel-molybdenum-boron (FeNiMoB) thin films that are intended for integrated microsystems. The films are deposited on Si substrate by co-sputtering of iron-nickel (FeNi), molybdenum (Mo), and boron (B) targets. The results show that dopants of Mo and B can significantly change the microstructure and magnetic properties of FeNi materials. When FeNi is doped with only Mo its crystal structure changes from polycrystalline to amorphous with the increase of dopant concentration; the transition point is found at about 10 at. % of Mo content. A significant change in anisotropic magnetic properties of FeNi is also observed as the Mo dopant level increases. The coercivity of FeNi films doped with Mo decreases to a value less than one third of the value without dopant. Doping the FeNi with B together with Mo considerably decreases the value of coercivity and the out-of-plane magnetic anisotropy properties, and it also greatly changes the microstructure of the material. In addition, doping B to FeNiMo remarkably reduces the remanence of the material. The film material that is fabricated using an optimized process is magnetically as soft as amorphous Metglas{sup TM} 2826MB with a coercivity of less than 40 Am{sup -1}. The findings of this study provide us a better understanding of the effects of the compositions and microstructure of FeNiMoB thin film materials on their magnetic properties.

Liang Cai; Gooneratne, Chinthaka; Cha, Dongkyu; Chen Long; Kosel, Jurgen [Computer Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology, 4700 KAUST, Thuwal 23955 (Saudi Arabia); Gianchandani, Yogesh [Department of Electrical Engineering and Computer Science, 1301 Beal Ave., University of Michigan, Ann Arbor, Michigan 48109 (United States)

2012-12-01T23:59:59.000Z

433

State of Ni in catalysts for glycerol hydrogenation and methane steam reforming as studied by X-ray absorption spectroscopy  

Science Journals Connector (OSTI)

X-ray absorption spectroscopy is used to study 1% Ni/Al2O3, 5% Ni/Al2O3, and 5% Ni/TiO2 catalysts for glycerol and methane conversion. The effect of treatment in H2 under microwave irradiation on the reduction of...

O. P. Tkachenko; L. M. Kustov

2013-06-01T23:59:59.000Z

434

The interfacial reaction of Ni on (100) Si?â??xGex (x=0, 0.25) and (111) Ge  

E-Print Network (OSTI)

The interfacial reaction of Ni with Si, Si?.??Ge?.??, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, ...

Jin, Lijuan

435

Na, Mg, Ni and Cs distribution and speciation after long-term alteration of a simulated nuclear waste glass  

E-Print Network (OSTI)

distribution and speciation of Na, Mg, Ni and Cs in a simulated (inactive) nuclear waste glass were studied and Cs represent dose determining long-lived radionuclides (59 Ni, 135 Cs) in vitrified nuclear wasteNa, Mg, Ni and Cs distribution and speciation after long-term alteration of a simulated nuclear

436

The influence of Pt redistribution on Ni{sub 1-x}Pt{sub x}Si growth properties  

SciTech Connect

We have studied the influence of Pt on the growth of Ni silicide thin films by examining the Pt redistribution during silicide growth. Three different initial Pt configurations were investigated, i.e., a Pt alloy (Ni+Pt/), a Pt capping layer (Pt/Ni/) and a Pt interlayer (Ni/Pt/), all containing 7 at. % Pt relative to the Ni content. The Pt redistribution was probed using in situ real-time Rutherford backscattering spectrometry (RBS) whereas the phase sequence was monitored during the solid phase reaction (SPR) using in situ real-time x-ray diffraction. We found that the capping layer and alloy exhibit a SPR comparable to the pure Ni/ system, whereas Pt added as an interlayer has a much more drastic influence on the Ni silicide phase sequence. Nevertheless, for all initial sample configurations, Pt redistributes in an erratic way. This phenomenon can be assigned to the low solubility of Pt in Ni{sub 2}Si compared to NiSi and the high mobility of Pt in Ni{sub 2}Si compared to pure Ni. Real-time RBS further revealed that the crucial issue determining the growth properties of each silicide phase is the Pt concentration at the Si interface during the initial stages of phase formation. The formation of areas rich in Pt reduce the Ni silicide growth kinetics which influences the phase sequence and properties of the silicides.

Demeulemeester, J.; Smeets, D.; Temst, K.; Vantomme, A. [Instituut voor Kern-en Stralingsfysica and INPAC, K.U.Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium); Comrie, C. M. [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa); Van Bockstael, C.; Knaepen, W.; Detavernier, C. [Department of Solid State Sciences, Ghent University, B-9000 Gent (Belgium)

2010-08-15T23:59:59.000Z

437

Using direct hot-rolling approach to obtain dual-phase weathering steel Cu–P–Cr–Ni–Mo  

Science Journals Connector (OSTI)

A weathering steel Cu–P–Cr–Ni–Mo has been ... based on the continuous cooling transformation diagram of weathering steel Cu–P–Cr–Ni–Mo. The results show that the microstructures of DP weathering steels Cu–P–Cr–Ni...

Chunling Zhang; Dayong Cai; Bo Liao; Yunchang Fan

2010-01-01T23:59:59.000Z

438

Mechanism(s) of Ni Sorption on Al-Hydroxy-Interlayered Vermiculite Using Time-Resolved EXAFS  

E-Print Network (OSTI)

Mechanism(s) of Ni Sorption on Al-Hydroxy-Interlayered Vermiculite Using Time-Resolved EXAFS D. R role in retaining these compounds. However, little research has been done to investigate the sorption of Ni when reacted with Al-pillared vermiculite over various times. The sorption of Ni increased when

Sparks, Donald L.

439

INFLUENCE OF GIBBSITE SURFACE AREA AND CITRATE ON Ni SORPTION MECHANISMS AT pH 7.5  

E-Print Network (OSTI)

INFLUENCE OF GIBBSITE SURFACE AREA AND CITRATE ON Ni SORPTION MECHANISMS AT pH 7.5 NORIKO U the sorption of Ni to gibbsite of two different surface areas at pH 7.5, in the presence and absence of citrate to elucidate the sorption mechanisms at the molecular level. In agreement with former results, Ni-Al layered

Sparks, Donald L.

440

Stopping and radial flow in central 58Ni+58Ni collisions between 1A and 2A GeV  

Science Journals Connector (OSTI)

The production of charged pions, protons, and deuterons has been studied in central collisions of 58Ni on 58Ni at incident beam energies of 1.06A, 1.45A, and 1.93A GeV. The dependence of transverse-momentum and rapidity spectra on the beam energy and on the centrality of the collison is presented. It is shown that the scaling of the mean rapidity shift of protons established for between 10A and 200A GeV at the Brookhaven AGS and the CERN SPS accelerators energies is valid down to 1A GeV. The degree of nuclear stopping is discussed; quantum molecular dynamics calculations reproduce the measured proton rapidity spectra for the most central events reasonably well, but do not show any sensitivity between the soft and the hard equation of state. A radial flow analysis, using the midrapidity transverse-momentum spectra, delivers freeze-out temperatures T and radial flow velocities ?r which increase with beam energy up to 2A GeV; in comparison to the existing data of Au on Au over a large range of energies, only ?r shows a system size dependence.

B. Hong et al. ((FOPI Collaboration))

1998-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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441

Dynamic nuclear polarization and Hanle effect in (In,Ga)As/GaAs quantum dots. Role of nuclear spin fluctuations  

SciTech Connect

The degree of circular polarization of photoluminescence of (In,Ga)As quantum dots as a function of magnetic field applied perpendicular to the optical axis (Hanle effect) is experimentally studied. The measurements have been performed at various regimes of the optical excitation modulation. The analysis of experimental data has been performed in the framework of a vector model of regular nuclear spin polarization and its fluctuations. The analysis allowed us to evaluate the magnitude of nuclear polarization and its dynamics at the experimental conditions used.

Gerlovin, I. Ya. [Spin Optics Laboratory, Saint Petersburg State University, Petrodvorets, 198504 St. Petersburg (Russian Federation); Cherbunin, R. V.; Ignatiev, I. V.; Kuznetsova, M. S.; Verbin, S. Yu. [Spin Optics Laboratory, Saint Petersburg State University, Petrodvorets, 198504 St. Petersburg, Russia and Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund (Germany); Flisinski, K.; Bayer, M. [Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund (Germany); Reuter, D.; Wieck, A. D. [Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum (Germany); Yakovlev, D. R. [Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund, Germany and A. F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

2013-12-04T23:59:59.000Z

442

Optical resonance modes in GaN pyramid microcavities  

SciTech Connect

An array of GaN hexagonal pyramids with a side length of 8.0 {mu}m was fabricated by selective epitaxial overgrowth. These microsized pyramids are highly efficient microcavities. Three types of optical resonance modes with mode spacings of 10, 5.0, and 6.0 {Angstrom} were observed when a single pyramid was pumped optically by an intense ultraviolet laser beam. An optical ray tracing method has been developed for calculating the optical resonance modes inside the pyramid microcavities. It was shown that a single pyramidal cavity can support several different types of optical resonance modes. The calculated mode spacing agrees very well with the observations. The uniqueness and advantages of this class of hexagonal pyramidal microcavities over the other microcavities are discussed. The implications of our finding on the future GaN microcavity light emitters including micro-light-emitting diodes, microcavity lasers, and vertical-cavity-surface emitting lasers are also discussed. {copyright} {ital 1999 American Institute of Physics.}

Jiang, H.X.; Lin, J.Y.; Zeng, K.C. [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)] [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States); Yang, W. [Honeywell Technology Center, Plymouth, Minnesota 55441 (United States)] [Honeywell Technology Center, Plymouth, Minnesota 55441 (United States)

1999-08-01T23:59:59.000Z

443

High Temperature Oxidation Behavior of gamma-Ni+gamma'-Ni3Al Alloys and Coatings Modified with Pt and Reactive Elements  

SciTech Connect

Materials for high-pressure turbine blades must be able to operate in the high-temperature gases (above 1000 C) emerging from the combustion chamber. Accordingly, the development of nickel-based superalloys has been constantly motivated by the need to have improved engine efficiency, reliability and service lifetime under the harsh conditions imposed by the turbine environment. However, the melting point of nickel (1455 C) provides a natural ceiling for the temperature capability of nickel-based superalloys. Thus, surface-engineered turbine components with modified diffusion coatings and overlay coatings are used. Theses coatings are capable of forming a compact and adherent oxide scale, which greatly impedes the further transport of reactants between the high-temperature gases and the underlying metal and thus reducing attack by the atmosphere. Typically, these coatings contain {beta}-NiAl as a principal constituent phase in order to have sufficient aluminum content to form an Al{sub 2}O{sub 3} scale at elevated temperatures. The drawbacks to the currently-used {beta}-based coatings, such as phase instabilities, associated stresses induced by such phase instabilities, and extensive coating/substrate interdiffusion, are major motivations in this study to seek next-generation coatings. The high-temperature oxidation resistance of novel Pt + Hf-modified {gamma}-Ni + {gamma}-Ni{sub 3}Al-based alloys and coatings were investigated in this study. Both early-stage and 4-days isothermal oxidation behavior of single-phase {gamma}-Ni and {gamma}{prime}-Ni{sub 3}Al alloys were assessed by examining the weight changes, oxide-scale structures, and elemental concentration profiles through the scales and subsurface alloy regions. It was found that Pt promotes Al{sub 2}O{sub 3} formation by suppressing the NiO growth on both {gamma}-Ni and {gamma}{prime}Ni{sub 3}Al single-phase alloys. This effect increases with increasing Pt content. Moreover, Pt exhibits this effect even at lower temperatures ({approx}970 C) in the very early stage of oxidation. It was also inferred that Pt enhances the diffusive flux of aluminum from the substrate to the scale/alloy interface. Relatively low levels of hafnium addition to Pt-free {gamma}{prime}-Ni{sub 3}Al increased the extent of external NiO formation due to non-protective HfO{sub 2} formation. Accordingly, this effect intensified with increasing Hf content from 0.2 to 0.5 at.%.

Nan Mu

2007-12-01T23:59:59.000Z

444

Maayamma Nannu Ragam: Nata Kuranji {28th Mela Janyam}  

E-Print Network (OSTI)

AnandA AnandA ambA (svara) mA ma ma ga sa *ni *dha *ni sa ri ga mA ma ma ga ma ni dha mA ma ma , ni dha ni sA* ri* ga* mA* ma* ga* ma* ri* sA* ni sa* sA* ni dha ma ma , ga sa *nI *dha *ni sa *dha *dha *pa *dha/06/syama-sastry-kriti-mayamma- nannu-raga.html) O My ("mA") Mother ("ammA") ("mAyammA")! O Mother ("amm

Kalyanaraman, Shivkumar

445

Journal of Crystal Growth 293 (2006) 273277 A study of semi-insulating GaN grown on AlN buffer/sapphire  

E-Print Network (OSTI)

-temperature GaN interlayer. In comparison with the normal GaN grown on sapphire, the crystal quality measurement results of GaN grown directly on an AlN buffer indicated that the as-grown-undoped Ga, or high density of edge-type dislocations [6­10]. However, Fe and other heavy metals tend to have reactor

Ozbay, Ekmel

446

Effects of crossed electric and magnetic fields on the electronic and excitonic states in bulk GaAs and GaAs?Ga1?xAlxAs quantum wells  

Science Journals Connector (OSTI)

The variational procedure in the effective-mass and parabolic-band approximations is used in order to investigate the effects of crossed electric and in-plane magnetic fields on the electronic and exciton properties in semiconductor heterostructures. Calculations are performed for bulk GaAs and GaAs?Ga1?xAlxAs quantum wells, for applied magnetic fields parallel to the layers and electric fields in the growth direction, and it is shown that the combined effects on the heterostructure properties of the applied crossed electric and magnetic fields and the direct coupling between the center-of-mass and internal exciton motions may be dealt with via a simple parameter representing the spatial distance between the centers of the electron and hole magnetic parabolas. Exciton properties are analyzed by using a simple hydrogenlike envelope excitonic wave function and present theoretical results are found in fair agreement with available experimental measurements on the diamagnetic shift of the photoluminescence peak position of GaAs?Ga1?xAlxAs quantum wells under in-plane magnetic fields.

M. de Dios-Leyva, C. A. Duque, and L. E. Oliveira

2007-01-02T23:59:59.000Z

447

Enhanced quality thin film Cu(In,Ga)Se.sub.2 for semiconductor device applications by vapor-phase recrystallization  

DOE Patents (OSTI)

Enhanced quality thin films of Cu.sub.w (In,Ga.sub.y)Se.sub.z for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu.sub.x Se on a substrate to form a large-grain precursor and then converting the excess Cu.sub.x Se to Cu(In,Ga)Se.sub.2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga).sub.y Se.sub.z. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300.degree.-600.degree. C., where the Cu(In,Ga)Se.sub.2 remains solid, while the excess Cu.sub.x Se is in a liquid flux. The characteristic of the resulting Cu.sub.w (In,Ga).sub.y Se.sub.z can be controlled by the temperature. Higher temperatures, such as 500.degree.-600.degree. C., result in a nearly stoichiometric Cu(In,Ga)Se.sub.2, whereas lower temperatures, such as 300.degree.-400.degree. C., result in a more Cu-poor compound, such as the Cu.sub.z (In,Ga).sub.4 Se.sub.7 phase.

Tuttle, John R. (Denver, CO); Contreras, Miguel A. (Golden, CO); Noufi, Rommel (Golden, CO); Albin, David S. (Denver, CO)

1994-01-01T23:59:59.000Z

448

Enhanced quality thin film Cu(In,Ga)Se[sub 2] for semiconductor device applications by vapor-phase recrystallization  

DOE Patents (OSTI)

Enhanced quality thin films of Cu[sub w](In,Ga[sub y])Se[sub z] for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu[sub x]Se on a substrate to form a large-grain precursor and then converting the excess Cu[sub x]Se to Cu(In,Ga)Se[sub 2] by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)[sub y]Se[sub z]. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300--600 C, where the Cu(In,Ga)Se[sub 2] remains solid, while the excess Cu[sub x]Se is in a liquid flux. The characteristic of the resulting Cu[sub w](In,Ga)[sub y]Se[sub z] can be controlled by the temperature. Higher temperatures, such as 500--600 C, result in a nearly stoichiometric Cu(In,Ga)Se[sub 2], whereas lower temperatures, such as 300--400 C, result in a more Cu-poor compound, such as the Cu[sub z](In,Ga)[sub 4]Se[sub 7] phase. 7 figs.

Tuttle, J.R.; Contreras, M.A.; Noufi, R.; Albin, D.S.

1994-10-18T23:59:59.000Z

449

Many-body effects on optical gain in GaAsPN/GaPN quantum well lasers for silicon integration  

SciTech Connect

Many-body effects on the optical gain in GaAsPN/GaP QW structures were investigated by using the multiband effective-mass theory and the non-Markovian gain model with many-body effects. The free-carrier model shows that the optical gain peak slightly increases with increasing N composition. In addition, the QW structure with a larger As composition shows a larger optical gain than that with a smaller As composition. On the other hand, in the case of the many-body model, the optical gain peak decreases with increasing N composition. Also, the QW structure with a smaller As composition is observed to have a larger optical gain than that with a larger As composition. This can be explained by the fact that the QW structure with a smaller As or N composition shows a larger Coulomb enhancement effect than that with a larger As or N composition. This means that it is important to consider the many-body effect in obtaining guidelines for device design issues.

Park, Seoung-Hwan, E-mail: shpark@cu.ac.kr [Department of Electronics Engineering, Catholic University of Daegu, Hayang, Kyeongbuk 712-702 (Korea, Republic of)

2014-02-14T23:59:59.000Z

450

Atomic data and spectral line intensities for Ni XI  

SciTech Connect

Electron impact collision strengths, energy levels, oscillator strengths, and spontaneous radiative decay rates are calculated for Ni XI. We include in the calculations the 12 lowest configurations, corresponding to 180 fine-structure levels: 3s{sup 2}3p{sup 6}, s{sup 2}3p{sup 5}3d, 3s{sup 2}3p{sup 4}3d{sup 2}, 3s3p{sup 6}3d, 3s{sup 2}3p{sup 5}4l, and 3s3p{sup 6}4l with l = s, p, d, f. Collision strengths are calculated at five incident energies for all transitions: 7.45, 17.6, 31.4, 50.1, and 75.2 Ry above the threshold of each transition. An additional energy, very close to the transition threshold, has been added, whose value is between 0.0007 Ry and 0.25 Ry depending on the levels involved. Calculations have been carried out using the Flexible Atomic Code. The scattering problem is solved in the distorted wave approximation. Excitation rate coefficients are calculated as a function of electron temperature by assuming a Maxwellian electron velocity distribution. Using the excitation rate coefficients and the radiative transition rates of the present work, combined with close coupling collision excitation rate coefficients available in the literature for the lowest 17 levels, statistical equilibrium equations for level populations are solved at electron densities covering the range of 10{sup 8}-10{sup 14} cm{sup -3} and at an electron temperature of logT{sub e}K=6.1, corresponding to the maximum abundance of Ni XI. Spectral line intensities are calculated, and their diagnostic relevance is discussed. This dataset will be made available in the next version of the CHIANTI database.

Bhatia, A.K. [NASA/Goddard Space Flight Center, Greenbelt, MD 20771 (United States); Landi, E., E-mail: Landi@nrl.navy.mi [Naval Research Laboratory, Washington, DC 20375 (United States)

2011-01-15T23:59:59.000Z

451

Atomic data and spectral line intensities for Ni XV  

SciTech Connect

Electron impact collision strengths, energy levels, oscillator strengths, and spontaneous radiative decay rates are calculated for Ni XV. We include in the calculations the 9 lowest configurations, corresponding to 126 fine structure levels: 3s{sup 2} 3p{sup 2}, 3s3p{sup 3}, 3s{sup 2} 3p3d, 3p{sup 4}, 3s3p{sup 2} 3d, and 3s{sup 2} 3p4l with l=,s,p,d,f. Collision strengths are calculated at five incident energies for all transitions: 7.8, 18.5, 33.5, 53.5, and 80.2 Ry above the threshold of each transition. An additional energy, very close to the transition threshold, has been added, whose value is between 0.004 and 0.28 Ry depending on the levels involved. Calculations have been carried out using the Flexible Atomic Code and the distorted-wave approximation. Excitation rate coefficients are calculated as a function of electron temperature by assuming a Maxwellian electron velocity distribution. Using the excitation rate coefficients and the radiative transition rates calculated in the present work, statistical equilibrium equations for level populations are solved at electron densities covering the 10{sup 8}-10{sup 14} cm{sup -3} range and at an electron temperature of logT{sub e}(K)=6.4, corresponding to the maximum abundance of Ni XV. Spectral line intensities are calculated, and their diagnostic relevance is discussed. This dataset will be made available in the next version of the CHIANTI database.

Landi, E., E-mail: elandi@umich.edu [Department of Atmospheric, Oceanic and Space Sciences, University of Michigan, Ann Arbor, MI 48109 (United States); Bhatia, A.K. [NASA/Goddard Space Flight Center, Greenbelt, MD 20771 (United States)] [NASA/Goddard Space Flight Center, Greenbelt, MD 20771 (United States)

2012-07-15T23:59:59.000Z

452

26. 1% solar cell efficiency for Ge mechanically stacked under GaAs  

SciTech Connect

We have processed a diffused Ge wafer into a Ge concentrator solar cell and mechanically stacked it under a GaAs cell fabricated by Varian. We measured this stack's efficiency to be 26.1% for terrestrial air mass 1.5 direct (AM1.5D) conditions at a 285 x concentration ratio. We showed that this efficiency is limited by optical absorption in the Varian GaAs cell caused by high 2--4 (10/sup 18/) cm/sup -3/ substrate doping. We used a 2 x 10/sup 17/ cm/sup -3/ doped GaAs filter to estimate the stack efficiency as 27.4%, which would be achieved with the same Varian GaAs cell formed on a lower doped substrate. We project efficiencies assuming the best properties reported for a GaAs device. This gives a 29.6% efficiency for an improved, planar Ge cell and 31.6% efficiency for a proposed point contact geometry for the Ge cell. The corresponding space (AM0) efficiencies at a 159 x concentration ratio range from the 23.4% value we measured on the stack up to 28.4% projected for the point contact Ge place under the best GaAs cell. We showed that Ge cells give higher efficiencies than Si when stacked under GaAs.

Partain, L.D.; Kuryla, M.S.; Weiss, R.E.; Ransom, R.A.; McLeod, P.S.; Fraas, L.M.; Cape, J.A.

1987-10-01T23:59:59.000Z

453

NREL Improves Hole Transport in Sensitized CdS-NiO Nanoparticle Photocathodes (Fact Sheet)  

SciTech Connect

Significantly improved charge-collection efficiencies result from a general chemical approach to synthesizing photocathodes. It has been reported that a dye-sensitized nickel oxide (NiO) photocathode, when coupled to a dye-sensitized photoanode, could significantly increase overall solar conversion efficiency. However, the conversion efficiencies of these cells are still low. There has been much effort to improve the conversion efficiency by fabricating films with improved properties and developing more effective sensitizing dyes for p-type NiO. One of the factors limiting the use of NiO for solar cell application is the low hole conductivity in p-NiO. A team of researchers from the National Renewable Energy Laboratory (NREL) developed a general chemical approach to synthesize NiO-cadmium sulfide (CdS) core-shell nanoparticle films as photocathodes for p-type semiconductor-sensitized solar cells. Compared to dye-sensitized NiO photocathodes, the CdS-sensitized NiO cathodes exhibited two orders of magnitude faster hole transport (attributable to the passivation of surface traps by the CdS) and almost 100% charge-collection efficiencies.

Not Available

2012-01-01T23:59:59.000Z

454

Cysteine 295 indirectly affects Ni coordination of carbon monoxide dehydrogenase-II C-cluster  

SciTech Connect

Highlights: •CODH-II harbors a unique [Ni-Fe-S] cluster. •We substituted the ligand residues of Cys{sup 295} and His{sup 261}. •Dramatic decreases in Ni content upon substitutions were observed. •All substitutions did not affect Fe-S clusters assembly. •CO oxidation activity was decreased by the substitutions. -- Abstract: A unique [Ni–Fe–S] cluster (C-cluster) constitutes the active center of Ni-containing carbon monoxide dehydrogenases (CODHs). His{sup 261}, which coordinates one of the Fe atoms with Cys{sup 295}, is suggested to be the only residue required for Ni coordination in the C-cluster. To evaluate the role of Cys{sup 295}, we constructed CODH-II variants. Ala substitution for the Cys{sup 295} substitution resulted in the decrease of Ni content and didn’t result in major change of Fe content. In addition, the substitution had no effect on the ability to assemble a full complement of [Fe–S] clusters. This strongly suggests Cys{sup 295} indirectly and His{sup 261} together affect Ni-coordination in the C-cluster.

Inoue, Takahiro; Takao, Kyosuke; Yoshida, Takashi [Division of Applied Biosciences, Graduate School of Agriculture, Kyoto University, Kyoto 606-8502 (Japan)] [Division of Applied Biosciences, Graduate School of Agriculture, Kyoto University, Kyoto 606-8502 (Japan); Wada, Kei [Organization for Promotion of Tenure Track, University of Miyazaki, Miyazaki 889-1692 (Japan)] [Organization for Promotion of Tenure Track, University of Miyazaki, Miyazaki 889-1692 (Japan); Daifuku, Takashi; Yoneda, Yasuko [Division of Applied Biosciences, Graduate School of Agriculture, Kyoto University, Kyoto 606-8502 (Japan)] [Division of Applied Biosciences, Graduate School of Agriculture, Kyoto University, Kyoto 606-8502 (Japan); Fukuyama, Keiichi [Department of Biological Sciences, Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043 (Japan)] [Department of Biological Sciences, Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043 (Japan); Sako, Yoshihiko, E-mail: sako@kais.kyoto-u.ac.jp [Division of Applied Biosciences, Graduate School of Agriculture, Kyoto University, Kyoto 606-8502 (Japan)] [Division of Applied Biosciences, Graduate School of Agriculture, Kyoto University, Kyoto 606-8502 (Japan)

2013-11-08T23:59:59.000Z

455

NiO(111) nanosheets as efficient and recyclable adsorbents for dye pollutant removal from  

Science Journals Connector (OSTI)

Semiconductor single-crystalline polar NiO(111) nanosheets with well-defined hexagonal holes have been investigated for application in dye adsorption and combustion processes. With regard to adsorption technologies, high surface area metal oxides have an advantage over activated carbon in that the adsorbed species can be combusted and the adsorbent reused in the case of metal oxides while regeneration of activated carbon remains challenging and thus the adsorbent/adsorbate system must be disposed of. Here, three typical textile dyes, reactive brilliant red X-3B, congo red and fuchsin red, were studied for removal from wastewater with two NiO systems and activated carbon. These studies revealed that the NiO(111) nanosheets exhibited much more favorable adsorptive properties than conventionally prepared nickel oxide powder (CP-NiO) obtained from thermal decomposition of nickel nitrate. The maximum adsorption capabilities of the three dyes on NiO(111) nanosheets reached 30.4 mg g?1, 35.15 mg g?1 and 22 mg g?1 for reactive brilliant red X-3B, congo red and fuchsin acid, respectively, while the maximum adsorption capabilities of the three dyes on CP-NiO were only 8.4, 13.2 and 12 mg g?1 for reactive brilliant red X-3B, congo red and fuchsin acid. To simulate the adsorption isotherm, two commonly employed models, the Langmuir and the Freundlich isotherms, were selected to explicate the interaction of the dye and NiO(111). The isotherm evaluations revealed that the Langmuir model demonstrated better fit to experimental equilibrium data than the Freundlich model. The maximum predicted adsorption capacity was 36.1 mg g?1. In addition, adsorption kinetic data of NiO(111) followed a pseudo-second-order rate for congo red. These studies infer that NiO(111) nanosheets possess desirable properties for application in adsorption and combustion applications.

Zhi Song; Lifang Chen; Juncheng Hu; Ryan Richards

2009-01-01T23:59:59.000Z

456

Lattice dynamics of GaN: Effects of 3d electrons  

Science Journals Connector (OSTI)

We perform first-principles calculations of structural, dielectric, and lattice-dynamical properties of cubic GaN. The equilibrium structure is obtained using the plane-wave pseudopotential approach within the density-functional theory and local-density approximation. The dielectric and vibrational properties are computed within the density-functional perturbation theory. The effect of the Ga 3d electrons is treated by taking into account the nonlinear core corrections for the exchange and correlation energy. The importance of 3d electrons for the bonding strength is determined, and their influence on the dielectric and dynamical properties of GaN is analyzed and discussed.

K. Karch; F. Bechstedt; T. Pletl

1997-08-15T23:59:59.000Z

457

Atomic geometry of the 2×2 GaP(111) surface  

Science Journals Connector (OSTI)

Integral and fractional order beam low-energy electron-diffraction intensity-voltage (I-V) data have been taken on a bombardment-annealed GaP(111)-(2×2) surface. We have compared these data with calculated I-V curves using a dynamical multiple scattering theory and found very good agreement for the following model: One out of every four Ga surface atoms is missing and the surface Ga-P bilayer is almost coplanar. Surface and deeper layer atoms undergo vertical and lateral displacements from bulk positions. Similar results in other systems suggest that the vacancy model applies on the (111) face of many compound semiconductors.

G. Xu; W. Y. Hu; M. W. Puga; S. Y. Tong; J. L. Yeh; S. R. Wang; B. W. Lee

1985-12-15T23:59:59.000Z

458

Integration of inverted InGaAs MSM array on Si substrate through low temperature  

E-Print Network (OSTI)

to reduce thermal stress at the interface. Huang et al. [2] presented a thin-film InGaAs MSM PD bonded to Si layers including those on InGaAs MSMs and Si/SiO2 is 860 nm. eching window InP epi-layer SiO2 Si Ti Au Au HCl:H3PO4 (1:1) to open a photodetection window. Citric acid was used to remove the InGaAs etching

Huang, Zhaoran "Rena"

459

Growth and optical characterization of multilayers of InGaN quantum dots  

E-Print Network (OSTI)

GaN quantum dots Article Type: Research Paper Section/Category: General subjects Keywords: B2. InGaN quantum dots; A1. Photoluminescence; B1. Nitrides; A3. Metal-organic vapour phase epitaxy Corresponding Author: Dr Tongtong Zhu, Ph... , Cambridge, CB2 3QZ, UK Dr Tongtong Zhu Tel: +44 1223 334368 Fax: +44 1223 334437 E-mail: tz234@cam.ac.uk 9 Sep 2011 Dear Editor, Title: Growth and optical characterization of multilayers of InGaN quantum dots Authors: Tongtong Zhu, Haitham A...

Zhu, Tontong; El-Ella, Haitham; Reid, Benjamin; Holmes, Mark; Taylor, Robert; Kappers, Menno; Oliver, Rachel

2012-01-01T23:59:59.000Z

460

Low threshold for optical damage in AlGaN epilayers and heterostructures  

SciTech Connect

Laser pulses with duration much shorter than the effective carrier lifetime cause permanent photoluminescence (PL) quenching and enhancement of PL decay rate in bare-faceted and capped AlGaN epilayers and multiple quantum wells at pulse energies about an order of magnitude lower than those causing the surface to melt and degrade. In contrast, GaN epilayers exhibit no photomodification in the same excitation intensity range. PL spectra and decay kinetics show that lattice heating is not responsible for the observed changes in AlGaN, which result from the formation of nonradiative recombination centers via recombination-enhanced defect reactions occurring at high nonequilibrium carrier densities.

Saxena, Tanuj [Department of ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Tamulaitis, Gintautas [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio al. 9-III, Vilnius, LT-10222 (Lithuania); Shatalov, Max; Yang, Jinwei; Gaska, Remis [Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209 (United States); Shur, Michael S. [Department of ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Department of PAPA, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

2013-11-28T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Ferromagnetism of GaMnAs studied by polarized neutron reflectometry  

Science Journals Connector (OSTI)

Polarized neutron reflectometry has been used to investigate details of spin ordering in ferromagnetic (FM) GaMnAs/GaAs superlattices. The reflectivity spectra measured below the Curie temperature reveal additional magnetic contributions to the structural superlattice Bragg peaks, clearly indicating the existence of FM interlayer correlations. Closer investigation of the magnetic reflectivity maxima using a full polarization analysis provides direct evidence that the FM order in the GaMnAs layers is truly long range. Moreover, as shown by the data, the system exhibits a strong tendency of forming a single-domain FM arrangement, even when cooled through TC in zero external field.

H. K?pa; J. Kutner-Pielaszek; A. Twardowski; C. F. Majkrzak; J. Sadowski; T. Story; T. M. Giebultowicz

2001-09-05T23:59:59.000Z

462

Suppression of bulk conductivity in InAs/GaSb broken gap composite quantum wells  

SciTech Connect

The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk. This work investigates a way of suppressing bulk conductivity by using gallium source materials of different degrees of impurity concentrations. While highest-purity gallium is accompanied by clear conduction through the sample bulk, intentional impurity incorporation leads to a bulk resistance over 1 M?, independent of applied magnetic fields. In addition, ultra high electron mobilities for GaAs/AlGaAs structures fabricated in a molecular beam epitaxy system used for the growth of Sb-based samples are reported.

Charpentier, Christophe; Fält, Stefan; Reichl, Christian; Nichele, Fabrizio; Nath Pal, Atindra; Pietsch, Patrick; Ihn, Thomas; Ensslin, Klaus; Wegscheider, Werner [Laboratory for Solid State Physics, ETH Zürich, 8093 Zürich (Switzerland)] [Laboratory for Solid State Physics, ETH Zürich, 8093 Zürich (Switzerland)

2013-09-09T23:59:59.000Z

463

Formation energy of excess arsenic atoms in n-type GaAs  

Science Journals Connector (OSTI)

We report the first determination of the formation energy of excess-As-atom–related defects in Te-doped GaAs. The photocapacitance method in the constant-capacitance condition is applied to GaAs:Te prepared by 67-h annealing at 850–1100 °C under various As vapor pressures followed by rapid cooling. From an Arrhenius plot of the saturating deep-level density at quasi thermal equilibrium under high As vapor pressure, the formation energy of the defect is determined to be 1.16 eV in Te-doped horizontal-Bridgeman-grown GaAs crystals.

Jun-ichi Nishizawa; Yutaka Oyama; Kazushi Dezaki

1990-11-12T23:59:59.000Z

464

Development of a Multifilament PIT V3Ga Conductor for Fusion Applications  

SciTech Connect

Previous studies on V{sub 3}Ga assert its suitability for use in proposed fusion reactors. V{sub 3}Ga may outperform Nb{sub 3}Sn in a fusion reactor environment based on its relatively flat critical-current profile in the 15 T-20 T range, resilience to applied strain, and reduced risk of induced radioactivity. A multifilament powder-in-tube V{sub 3}Ga conductor was designed, fabricated and tested with a focus on evaluating critical current versus applied field and applied strain performance, wire drawing difficulties, heat-treatment optimization, and overall feasibility of the concept.

Distin, J.S.; Ghosh, A.; Motowidlo, L.R.; Lee, P.J.; Larbalestier, D.C.; Lu, X.F.; Cheggour, N.; Stauffer, T.C.; Goodrich, L.F.

2011-08-03T23:59:59.000Z

465

Intersubband transitions in In{sub x}Ga{sub 1?x}N/In{sub y}Ga{sub 1?y}N/GaN staggered quantum wells  

SciTech Connect

Intersubband transition energies and absorption lineshape in staggered InGaN/GaN quantum wells surrounded by GaN barriers are computed as functions of structural parameters such as well width, In concentrations, and the doping level in the well. Schrödinger and Poisson equations are solved self-consistently by taking the free and bound surface charge concentrations into account. Many-body effects, namely, depolarization and excitonic shifts are also included in the calculations. Results for transition energies, oscillator strength, and the absorption lineshape up to nonlinear regime are represented as functions of the parameters mentioned. The well width (total and constituent layers separately) and In concentration dependence of the built-in electric field are exploited to tune the intersubband transition energies.

Y?ld?r?m, Hasan, E-mail: hasanyildirim@karabuk.edu.tr [Department of Occupational Health and Safety, School of Health, Karabuk University, Karabuk 78050 (Turkey); Aslan, Bulent, E-mail: bulentaslan@anadolu.edu.tr [Department of Physics, Faculty of Science, Anadolu University Yunus Emre Campus, Eskisehir 26470 (Turkey)

2014-04-28T23:59:59.000Z

466

Silicon's role in determining swelling in neutron-irradiated Fe-Cr-Ni-Si alloys  

SciTech Connect

Two silicon-modified alloy series, one based on Fe-15Cr-20Ni and another based on Fe-15Cr-25Ni were irradiated at target temperatures between 399 and 649{degree}C in EBR-II. The influence of silicon on swelling is more complex than previously envisioned and indicates that silicon plays two or more competing roles while in solution. Radiation-induced formation of {gamma}{prime} (Ni{sub 3}Si) precipitates is dependent on silicon and nickel content, as well as temperature. Precipitation of {gamma}{prime} appears to play only a minor role in void formation.

Sekimura, N. (Tokyo Univ., Tokai, Ibaraki (Japan)); Garner, F. A. (Pacific Northwest Lab., Richland, WA (United States)); Newkirk, J.W. (Missouri Univ., Rolla, MO (United States))

1991-11-01T23:59:59.000Z

467

Gamma-strength functions in 60Ni from two-step cascades following proton capture  

E-Print Network (OSTI)

The two-step cascade method previously used in neutron capture experiments is now applied to a proton capture reaction. The spectrum of two-step cascades populating the first 2+ level of 60Ni has been measured with 59Co(p,2gamma)60Ni reaction. The simulation technique used for the spectrum analysis allows one to reveal the range of possible shapes of both E1 and M1 gamma-strength functions. The low-energy enhancement previously observed in 3He induced reactions is seen to appear in M1 strength functions of 60Ni.

A. Voinov; S. M. Grimes; C. R. Brune; M. Guttormsen; A. C. Larsen; T. N. Massey; A. Schiller; S. Siem

2009-11-10T23:59:59.000Z

468

LBNL-4183E-rev1 N NA AT TU UR RA AL L G GA AS S V VA AR RI  

NLE Websites -- All DOE Office Websites (Extended Search)

4183E-rev1 4183E-rev1 N NA AT TU UR RA AL L G GA AS S V VA AR RI IA AB BI IL LI IT TY Y I IN N C CA AL LI IF FO OR RN NI IA A: : E EN NV VI IR RO ON NM ME EN NT TA AL L I IM MP PA AC CT TS S A AN ND D D DE EV VI IC CE E P PE ER RF FO OR RM MA AN NC CE E E EX XP PE ER RI IM ME EN NT TA AL L E EV VA AL LU UA AT TI IO ON N O OF F I IN NS ST TA AL LL LE ED D C CO OO OK KI IN NG G E EX XH HA AU US ST T F FA AN N P PE ER RF FO OR RM MA AN NC CE E Brett C. Singer, William W. Delp and Michael G. Apte Indoor Environment Department Atmospheric Sciences Department Environmental Energy Technologies Division July 2011 (Revised February 2012) Disclaimer 1 This document was prepared as an account of work sponsored by the United States Government. While this document is believed to contain correct information, neither the United States Government nor any agency thereof, nor The Regents of the University of California, nor any of

469

Significant Reduction in NiO Band Gap upon Formation of LixNi1?xO Alloys: Applications to Solar Energy Conversion  

SciTech Connect

Long-term sustainable solar energy conversion relies on identifying economical and versatile semiconductor materials with appropriate band structures for photovoltaic and photocatalytic applications (e.g., band gaps of ?1.5–2.0 eV). Nickel oxide (NiO) is an inexpensive yet highly promising candidate. Its charge-transfer character may lead to longer carrier lifetimes needed for higher efficiencies, and its conduction band edge is suitable for driving hydrogen evolution via water-splitting. However, NiO’s large band gap (?4 eV) severely limits its use in practical applications. Our first-principles quantum mechanics calculations show band gaps dramatically decrease to ?2.0 eV when NiO is alloyed with Li2O. We show that LixNi1?xO alloys (with x=0.125 and 0.25) are p-type semiconductors, contain states with no impurity levels in the gap and maintain NiO’s desirable charge-transfer character. Lastly, we show that the alloys have potential for photoelectrochemical applications, with band edges well-placed for photocatalytic hydrogen production and CO2 reduction, as well as in tandem dye-sensitized solar cells as a photocathode.

Alidoust, Nima; Toroker, Maytal; Keith, John A.; Carter, Emily A.

2014-01-01T23:59:59.000Z

470

Electronic parameters and interfacial properties of GaAs/AlxGa1-xAs multiquantum wells grown on (111)A GaAs by metalorganic vapor phase epitaxy  

Science Journals Connector (OSTI)

We report a comprehensive study of the optical and interfacial properties of GaAs/AlxGa1-xAs multiquantum wells grown on (111)A GaAs substrates by metalorganic vapor phase epitaxy which allowed the determination of the electronic parameters appropriate for such quantum wells. High-resolution x-ray diffractometry studies indicate an excellent crystal quality and good periodicity for the multiquantum wells and provided their structural parameters accurately. The photoreflectance spectra exhibit all the allowed and almost all the weakly allowed optical transitions between the confined hole and electron states. From an analysis of the photoreflectance spectra it is shown that the quantum well interfaces have an abruptness better than ±1 ML. Photoluminescence spectroscopy was also performed to evaluate independently the roughness of the interfaces and multiquantum well period reproducibility. For a 25-period multiquantum well structure with a well width of 55 Å, a photoluminescence linewidth of 12.5 meV, which corresponds to a combined well-width fluctuation and interface roughness of less than ±1 monolayer over the 25 periods, proves the achievement of heterointerfaces with excellent interfacial quality. From a detailed analysis of the high-order transitions observed in the photoreflectance spectra we determined key quantum well electronic parameters, such as, the heavy-hole valence-band offset Qv=0.33±0.02, the transverse GaAs heavy-hole effective mass mhh=(0.95±0.02)m0, and the light-hole effective mass mlh=0.08m0 in ?111? directions, for ?111?-oriented GaAs/AlxGa1-xAs quantum well structures.

Soohaeng Cho; A. Sanz-Hervás; A. Majerfeld; B. W. Kim

2003-07-10T23:59:59.000Z

471

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1-eV)/GaInAs(0.7-eV) Four-Junction Solar Cell: Preprint  

SciTech Connect

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga0.5In0.5P/GaAs/Ga0.75In0.25As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga0.75In0.25As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap GaxIn1-xAs fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the GaxIn1-xAs fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-05-01T23:59:59.000Z

472

Carrier cooling and exciton formation in GaSe  

Science Journals Connector (OSTI)

The initial cooling of hot carriers and the subsequent exciton formation in GaSe are studied by time-resolved photoluminescence (PL) using femtosecond up-conversion techniques. From the time-resolved PL spectra of this layered III-VI semiconductor two different energy relaxation channels are derived. After an initial subpicosecond cooling due to Fröhlich-type interaction of carriers with longitudinal optical E?(22) phonons a slower regime follows, which is dominated by deformation potential interaction with the nonpolar optical A1?(12) phonons. The coupling constant for nonpolar optical phonon scattering is derived. The subsequent formation of excitons is studied at different carrier densities and detection energies. A cross section for the free-exciton formation is determined based on a rate equation model.

S. Nüsse; P. Haring Bolivar; H. Kurz; V. Klimov; F. Levy

1997-08-15T23:59:59.000Z

473

Dimensionality of InGaAs nonlinear optical response  

SciTech Connect

In this thesis the ultrafast optical properties of a series of InGaAs samples ranging from the two to the three dimensional limit are discussed. An optical system producing 150 fs continuum centered at 1.5 microns was built. Using this system, ultrafast pump-probe and four wave mixing experiments were performed. Carrier thermalization measurements reveal that screening of the Coulomb interaction is relatively unaffected by confinement, while Pauli blocking nonlinearities at the band edge are approximately twice as strong in two dimensions as in three. Carrier cooling via phonon emission is influenced by confinement due both to the change in electron distribution function and the reduction in electron phonon coupling. Purely coherent band edge effects, as measured by the AC Stark effect and four wave mixing, are found to be dominated by the changes in excitonic structure which take place with confinement.

Bolton, S.R. [Univ. of California, Berkeley, CA (United States). Dept. of Physics]|[Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

1995-07-01T23:59:59.000Z

474

Temperature dependence of optical transitions in AlGaAs  

Science Journals Connector (OSTI)

AlGaAs structures with different aluminum concentration (x=0.0 0.17 0.30 and 0.40) were characterized by photoluminescence and photoreflectance techniques. The temperature dependence of optical transitions in the temperature ranging from 2 to 300 K were investigated. Y. P. Varshni [Physica (Utrecht) 34 194 (1967)] L. Viña et al. [Phys. Rev. B 30 1979 (1984)] and R. Pässler [Phys. Status Solidi B 200 155 (1997)] models were used to fit the experimental points. The Pässler model gave the best adjustment to the experimental points. The tree models showed that the empirical parameters obtained through the adjustment of the experimental data in the three different models are aluminum composition dependent in the ternary alloy.

S. A. Lourenço; I. F. L. Dias; J. L. Duarte; E. Laureto; E. A. Meneses; J. R. Leite; I. Mazzaro

2001-01-01T23:59:59.000Z

475

Strain-driven transition from stepped interfaces to regularly spaced macrosteps in (GaIn)As/Ga(PAs) symmetrically strained superlattices  

Science Journals Connector (OSTI)

We investigate the morphological transition from a steplike interface modulation to a highly periodic lateral thickness modulation that occurs on symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices grown by metal-organic vapor phase epitaxy on miscut (001)GaAs substrate. The combination of x-ray reciprocal-space mapping, around the (004) as well as the (200) and (020) reciprocal-lattice points, and transmission electron microscopy allowed us to monitor and analyze accurately the structural periodicities and ordering of heterointerfaces and to relate them to the elastic strain field. The laterally ordered macrosteps on the growth surface are investigated and discussed as a function of the strain misfit between epitaxial layer and substrate. Within this purpose, the complementary information obtained by grazing-incidence x-ray diffraction, by looking at different reciprocal-lattice points, is discussed in relationship to the effects of strain and morphological modulation of the interfaces in the process of macrostep formation.

C. Giannini; T. Baumbach; D. Lübbert; R. Felici; L. Tapfer; T. Marschner; W. Stolz; N. Y. Jin-Phillipp; F. Phillipp

2000-01-15T23:59:59.000Z

476

Precipitation behavior of Ni-Cr-22 Fe-18 Mo (Hastelloy-X) and Ni-Cr-22 Co-12 Mo (Inconel-617) after isothermal aging  

SciTech Connect

The precipitation behavior of the nickel-base alloys Ni-Cr-22Fe-18Mo (Hastelloy-X) and Ni-Cr-22Co12Mo (Inconel-617) has been investigated as a function of aging temperature. Hastelloy-X shows that M/sub 6/C and TiN are primary precipitates and M/sub 12/C, A/sub 3/B/sub 2/ (approx. = Fe/sub 3/Mo/sub 2/), and M/sub 23/C/sub 6/ are secondary precipitates, while Inconel-617 also has M/sub 6/C and TiN as primary precipitates and M/sub 23/C/sub 6/, M/sub 12/C, and Ni/sub 3/AlTi as secondary precipitates. The characterization has been carried out by metallographic and transmission electron microscopy investigations and by x-ray examinations of electrochemical isolated precipitates.

Kirchhofer, H.; Nickel, H.; Schubert, F.

1984-07-01T23:59:59.000Z

477

Evaluation of Zr(Ni, Mn){sub 2} Laves phase alloys as negative active material for Ni-MH electric vehicle batteries  

SciTech Connect

Laves phase alloys of compositions (Zr, Ti)(Ni, Mn, M){sub x} where M = Cr, V, Co, Al, and 1.9 < x < 2.1 with hexagonal C14 or cubic C15 structure have been studied in order to select the most suitable AB{sub 2} alloys as an active material for nickel-metal hydride (Ni-MH) batteries. With the selected alloy, feasibility of MH negative electrodes using industrial technology and containing more than 97% of the alloy powder has been demonstrated. 22 Ah Ni-MH batteries for electric vehicle application have been assembled, and 600 cycles have been achieved at steady C/3 charge and discharge rates and 80% depth of discharge.

Knosp, B. [Alcatel Alsthom Recherche, Marcoussis (France); Jordy, C.; Blanchard, P. [SAFT Research Dept., Marcoussis (France); Berlureau, T. [SAFT Advanced and Industrial Battery Div., Bordeaux (France)

1998-05-01T23:59:59.000Z

478

Development of 1.25 eV InGaAsN for triple junction solar cells  

SciTech Connect

Development of next generation high efficiency space monolithic multifunction solar cells will involve the development of new materials lattice matched to GaAs. One promising material is 1.05 eV InGaAsN, to be used in a four junction GaInP{sub 2}/GaAs/InGaAsN/Ge device. The AMO theoretical efficiency of such a device is 38--42%. Development of the 1.05 eV InGaAsN material for photovoltaic applications, however, has been difficult. Low electron mobilities and short minority carrier lifetimes have resulted in short minority carrier diffusion lengths. Increasing the nitrogen incorporation decreases the minority carrier lifetime. The authors are looking at a more modest proposal, developing 1.25 eV InGaAsN for a triple junction GaInP{sub 2}/InGaAsN/Ge device. The AMO theoretical efficiency of this device is 30--34%. Less nitrogen and indium are required to lower the bandgap to 1.25 eV and maintain the lattice matching to GaAs. Hence, development and optimization of the 1.25 eV material for photovoltaic devices should be easier than that for the 1.05 eV material.

LI,N.Y.; SHARPS,P.R.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-05-16T23:59:59.000Z

479

Methane Steam Reforming Kinetics on a Ni/Mg/K/Al2O3 Catalyst  

Science Journals Connector (OSTI)

The kinetics of methane steam reforming were studied on a Ni/Mg/K/...2O3...catalyst that was developed for conditioning of biomass-derived syngas. Reactions were conducted in a packed-bed reactor while the concen...

Allison M. Robinson; Megan E. Gin; Matthew M. Yung

2013-12-01T23:59:59.000Z

480

Fabrication and characterization of porous NiTi Shape Memory Alloy by elevated pressure sintering  

E-Print Network (OSTI)

have not been adequately developed. Currently, three methods are commonly used for producing porous NiTi SMAs from elemental powders. These methods include conventional sintering, Self-propagating High-temperature Synthesis (SHS), and sintering...

Vandygriff, Eric Layton

2012-06-07T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Thermomechanical Cyclic Response of TiNiPd High-Temperature Shape Memory Alloys  

E-Print Network (OSTI)

TiNiPd high-temperature shape memory alloys (HTSMAs) have attracted considerable attention as potential solid-state actuators capable of operating at temperatures up to 500 °C, exhibiting excellent corrosion resistance, adequate ductility levels...

Atli, Kadri

2012-10-19T23:59:59.000Z

482

Microstructure and Strengthening Mechanisms of Highly Textured Cu/Ni Multilayers  

E-Print Network (OSTI)

In this thesis, I planned to fabricate Cu/Ni metallic multilayers with equal layer thicknesses on different substrates by using magnetic sputtering technique. My objective was to characterize the texture, structure and hardness, in order to study...

Liu, Yue

2011-10-21T23:59:59.000Z

483

Roughening of the interface between grains and liquid matrix in sintered TaC-20Ni  

Science Journals Connector (OSTI)

The grains in TaC-20 wt pct Ni alloy prepared by liquidphase sintering at 1480°C have orthorhombic shapes with flat {100} faces and sharp edges. These grains show abnormal growth. When sintered at 2020°C, the gra...

Young Kyu Cho; Duk Yong Yoon; Jung Hoon Choi…

2005-09-01T23:59:59.000Z

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Thermodynamic modeling and experimental validation of the Fe-Al-Ni-Cr-Mo alloy system  

SciTech Connect

NiAl-type precipitate-strengthened ferritic steels have been known as potential materials for the steam turbine applications. In this study, thermodynamic descriptions of the B2-NiAl type nano-scaled precipitates and body-centered-cubic (BCC) Fe matrix phase for four alloys based on the Fe-Al-Ni-Cr-Mo system were developed as a function of the alloy composition at the aging temperature. The calculated phase structure, composition, and volume fraction were validated by the experimental investigations using synchrotron X-ray diffraction and atom probe tomography. With the ability to accurately predict the key microstructural features related to the mechanical properties in a given alloy system, the established thermodynamic model in the current study may significantly accelerate the alloy design process of the NiAl-strengthened ferritic steels.

Teng, Zhenke [ORNL; Zhang, F [CompuTherm LLC, Madison, WI; Miller, Michael K [ORNL; Liu, Chain T [Hong Kong Polytechnic University; Huang, Shenyan [ORNL; Chou, Y.T. [Multi-Phase Services Inc., Knoxville; Tien, R [Multi-Phase Services Inc., Knoxville;