Sample records for ga ni za

  1. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01T23:59:59.000Z

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  2. CoNiGa High Temperature Shape Memory Alloys

    E-Print Network [OSTI]

    Dogan, Ebubekir

    2011-10-21T23:59:59.000Z

    commercially successful SMAs such as NiTi and Cu-based alloys. In recent years, the CoNiGa system has emerged as a new ferromagnetic shape memory alloy with some compositions exhibiting high martensitic transformation temperatures which makes CoNiGa a potential...

  3. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect (OSTI)

    Özduran, Mustafa [Ahi Evran Üniversitesi Fen Edebiyat Fakültesi Fizik Bölümü, K?r?ehir (Turkey); Turgut, Kemal [Yüksek Lisans Ö?rencisi, K?r?ehir (Turkey); Arikan, Nihat [Ahi Evran Üniversitesi E?itim Fakültesi ?lkö?retim Bölümü, K?r?ehir (Turkey); ?yigör, Ahmet; Candan, Abdullah [Ahi Evran Üniversitesi Merkezi Ara?t?rma Laboratuvar?, K?r?ehir (Turkey)

    2014-10-06T23:59:59.000Z

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  4. Transverse acoustic actuation of Ni-Mn-Ga single crystals

    E-Print Network [OSTI]

    Simon, Jesse Matthew

    2007-01-01T23:59:59.000Z

    Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

  5. Bending properties of epoxy resin matrix composites filled with NiMnGa ferromagnetic shape memory alloy powders

    E-Print Network [OSTI]

    Zheng, Yufeng

    Bending properties of epoxy resin matrix composites filled with Ni­Mn­Ga ferromagnetic shape memory­Mn­Ga Composite materials Mechanical properties Microstructure Two types of epoxy resin matrix composites filled­Mn­Ga epoxy resin composites were reported, yet the bending property of Ni­Mn­Ga-polymer smart composites has

  6. Electronic structure of Co-Ni-Ga Heusler alloys studied by resonant photoemission

    SciTech Connect (OSTI)

    Baral, Madhusmita, E-mail: madhusmita@rrcat.gov.in; Banik, Soma, E-mail: madhusmita@rrcat.gov.in; Ganguli, Tapas, E-mail: madhusmita@rrcat.gov.in; Chakrabarti, Aparna, E-mail: madhusmita@rrcat.gov.in; Deb, S. K. [Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Thamizhavel, A. [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai 400005 (India); Wadikar, Avinash; Phase, D. M. [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore-452017 (India)

    2014-04-24T23:59:59.000Z

    The electronic structures of Co{sub 2.01}Ni{sub 1.05}Ga{sub 0.94} and Co{sub 1.76}Ni{sub 1.46}Ga{sub 0.78} Heusler alloys have been investigated by resonant photoemission spectroscopy across the 3p-3d transition of Co and Ni. For the Ni excess composition Co{sub 1.76}Ni{sub 1.46}Ga{sub 0.78}, the valence band peak shows a shift of 0.25 eV as compared to the near stoichiometric composition Co{sub 2.01}N1{sub 1.05}Ga{sub 0.94}. Also an enhancement is observed in the Ni related satellite features in the valence band for the Ni excess composition. Due to hybridization of Co and Ni 3d states in these systems, the Co and Ni 3p-3d resonance energies are found to be higher as compared to Co and Ni metals. Theoretical first principle calculation is performed to understand the features in the valence band and the shape of the resonance profile.

  7. Computational Thermodynamics of CoNiGa High Temperature Shape Memory Alloys

    E-Print Network [OSTI]

    Chari, Arpita

    2012-10-19T23:59:59.000Z

    Shape Memory Alloys (SMAs) are advanced materials with interesting properties such as pseudoelasticity (PE) and the shape memory effect (SME). Recently, the CoNiGa system has emerged as the basis for very promising High Temperature Shape Memory...

  8. Frequency Response of Acoustic-Assisted Ni–Mn–Ga Ferromagnetic- Shape-Memory-Alloy Actuator

    E-Print Network [OSTI]

    Techapiesancharoenkij, Ratchatee

    A prototype of Ni–Mn–Ga based ferromagnetic-shape-memory-alloy (FSMA) actuator was designed and built; an acoustic-assist technique was applied to the actuator to enhance its performance. A piezoelectric stack actuator was ...

  9. Understanding and development of combined acoustic and magnetic actuation of Ni?MnGa single crystals

    E-Print Network [OSTI]

    Techapiesancharoenkij, Ratchatee, 1979-

    2007-01-01T23:59:59.000Z

    Ni-Mn-Ga based ferromagnetic shape memory alloys (FSMAs) have emerged as a promising new class of active materials capable of producing a large (several %) magnetic-field-induced strain (MFIS). FSMAs still have several ...

  10. Magnetic field-induced phase transformation and variant reorientation in Ni2MnGa and NiMnCoIn magnetic shape memory alloys

    E-Print Network [OSTI]

    Karaca, Haluk Ersin

    2009-05-15T23:59:59.000Z

    The purpose of this work is to reveal the governing mechanisms responsible for the magnetic field-induced i) martensite reorientation in Ni2MnGa single crystals, ii) stress-assisted phase transformation in Ni2MnGa single crystals and iii) phase...

  11. Neutron diffraction study of MnNiGa{sub 2}—Structural and magnetic behaviour

    SciTech Connect (OSTI)

    Wang, J. L., E-mail: jianli@uow.edu.au [Institute for Superconductivity and Electronic Materials, University of Wollongong, Wollongong, NSW 2522 (Australia); Bragg Institute, ANSTO, Lucas Heights, NSW 2234 (Australia); School of Physical, Environmental and Mathematical Sciences, The University of New South Wales, Canberra, ACT 2600 (Australia); Ma, L.; Wu, G. H. [Institute of Physics, Chinese Academy of Science, Beijing 100190 (China); Hofmann, M. [FRM-II, Technische Universität München, 85747 Garching (Germany); Avdeev, M.; Kennedy, S. J. [Bragg Institute, ANSTO, Lucas Heights, NSW 2234 (Australia); Campbell, S. J. [School of Physical, Environmental and Mathematical Sciences, The University of New South Wales, Canberra, ACT 2600 (Australia); Md Din, M. F.; Dou, S. X. [Institute for Superconductivity and Electronic Materials, University of Wollongong, Wollongong, NSW 2522 (Australia); Hoelzel, M. [FRM-II, Technische Universität München, 85747 Garching (Germany); Fachbereich Materialwissenschaften, Technische Universität Darmstadt, 64287 Darmstadt (Germany)

    2014-05-07T23:59:59.000Z

    MnNiGa{sub 2} crystallizes in the L21 (Heusler) structure and has a ferromagnetic ordering temperature T{sub C}???192?K. Rietveld refinement of the neutron diffraction patterns indicates that the Ga atoms occupy the equivalent 8c position, while Mn and Ni share the 4a (0, 0, 0) and 4b (0.5, 0.5, 0.5) sites with a mixed occupancy of Mn and Ni atoms. It is found that that ?83% of Mn and ?17% Ni are located at the 4a site while ?83% of Ni and ?17% Mn occupy the 4b site. There is no evidence of a magneto-volume effect around T{sub C}. In agreement with this finding, our detailed critical exponent analyses of isothermal magnetization curves and the related Arrott plots confirm that the magnetic phase transition at T{sub C} is second order.

  12. Synthesis and Characterization of NiMnGa Ferromagnetic Shape Memory Alloy Thin Films

    E-Print Network [OSTI]

    Jetta, Nishitha

    2011-10-21T23:59:59.000Z

    , it is very important to understand their behavior and examine their properties. This thesis is an effort to contribute to the literature of Ni-Mn-Ga thin films as ferromagnetic shape memory alloys. The focus of this project is to develop a recipe...

  13. The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN

    SciTech Connect (OSTI)

    Li, X. J.; Zhao, D. G., E-mail: dgzhao@red.semi.ac.cn; Jiang, D. S.; Liu, Z. S.; Chen, P.; Zhu, J. J.; Le, L. C.; Yang, J.; He, X. G. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing 100083 (China); Zhang, S. M.; Zhang, B. S.; Liu, J. P. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Yang, H. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing 100083 (China); Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China)

    2014-10-28T23:59:59.000Z

    The significant effect of the thickness of Ni film on the performance of the Ohmic contact of Ni/Au to p-GaN is studied. The Ni/Au metal films with thickness of 15/50?nm on p-GaN led to better electrical characteristics, showing a lower specific contact resistivity after annealing in the presence of oxygen. Both the formation of a NiO layer and the evolution of metal structure on the sample surface and at the interface with p-GaN were checked by transmission electron microscopy and energy-dispersive x-ray spectroscopy. The experimental results indicate that a too thin Ni film cannot form enough NiO to decrease the barrier height and get Ohmic contact to p-GaN, while a too thick Ni film will transform into too thick NiO cover on the sample surface and thus will also deteriorate the electrical conductivity of sample.

  14. Systematic analysis of the crystal structure, chemical ordering, and microstructure of Ni-Mn-Ga ferromagnetic shape memory alloys

    E-Print Network [OSTI]

    Richard, Marc Louis

    2005-01-01T23:59:59.000Z

    Ni-n-Ga based ferromagnetic shape-memory alloys (FSMAs) have shown great promise as an active material that yields a large output strain over a range of actuation frequencies. The maximum strain has been reported to be 6% ...

  15. Vacancy dynamic in Ni-Mn-Ga ferromagnetic shape memory alloys

    SciTech Connect (OSTI)

    Merida, D., E-mail: david.merida@ehu.es [Fisika Aplikatua II Saila, Euskal Herriko Unibertsitatea UPV/EHU, p.k. 644, 48080 Bilbao (Spain); Elektrizitate eta Elektronika Saila, Euskal Herriko Unibertsitatea UPV/EHU, p.k. 644, 48080 Bilbao (Spain); García, J. A. [Fisika Aplikatua II Saila, Euskal Herriko Unibertsitatea UPV/EHU, p.k. 644, 48080 Bilbao (Spain); BC Materials (Basque Centre for Materials, Application and Nanostructures), 48040 Leioa (Spain); Sánchez-Alarcos, V.; Pérez-Landazábal, J. I.; Recarte, V. [Departamento de Física, Universidad Pública de Navarra, Campus de Arrosadia, 31006 Pamplona (Spain); Plazaola, F. [Elektrizitate eta Elektronika Saila, Euskal Herriko Unibertsitatea UPV/EHU, p.k. 644, 48080 Bilbao (Spain)

    2014-06-09T23:59:59.000Z

    Vacancies control any atomic ordering process and consequently most of the order-dependent properties of the martensitic transformation in ferromagnetic shape memory alloys. Positron annihilation spectroscopy demonstrates to be a powerful technique to study vacancies in NiMnGa alloys quenched from different temperatures and subjected to post-quench isothermal annealing treatments. Considering an effective vacancy type the temperature dependence of the vacancy concentration has been evaluated. Samples quenched from 1173?K show a vacancy concentration of 1100?±?200?ppm. The vacancy migration and formation energies have been estimated to be 0.55?±?0.05?eV and 0.90?±?0.07?eV, respectively.

  16. Magneto-optical spectroscopy of ferromagnetic shape-memory Ni-Mn-Ga alloy

    SciTech Connect (OSTI)

    Veis, M., E-mail: veis@karlov.mff.cuni.cz; Beran, L.; Zahradnik, M.; Antos, R. [Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 5, 12116 Prague (Czech Republic); Straka, L. [Aalto University School of Engineering, PL14200, FIN-00076 Aalto (Finland); Kopecek, J.; Fekete, L.; Heczko, O. [Institute of Physics, ASCR, Na Slovance 2, 182 21 Prague (Czech Republic)

    2014-05-07T23:59:59.000Z

    Magneto-optical properties of single crystal of Ni{sub 50.1}Mn{sub 28.4}Ga{sub 21.5} magnetic shape memory alloy in martensite and austenite phase were systematically studied. Crystal orientation was approximately along (100) planes of parent cubic austenite. At room temperature, the sample was in modulated 10M martensite phase and transformed to cubic austenite at 323?K. Spectral dependence of polar magneto-optical Kerr effect was obtained by generalized magneto-optical ellipsometry with rotating analyzer in the photon energy range from 1.2 to 4?eV, and from room temperature to temperature above the Curie point. The Kerr rotation spectra exhibit prominent features typical for complexes containing Mn atoms. Significant spectral changes during transformation to austenite can be explained by different optical properties caused by changes in density of states near the Fermi energy.

  17. Electroluminescence of InGaAs/GaAs quantum-size heterostructures with (III, Mn)V and Ni ferromagnetic injectors

    SciTech Connect (OSTI)

    Prokof'eva, M. M., E-mail: marinaprkfeva@rambler.ru [Lobachevsky State University (Russian Federation); Dorokhin, M. V.; Danilov, Yu. A.; Kudrin, A. V.; Vikhrova, O. V. [Lobachevsky State University of Nizhni Novgorod, Physicotechnical Research Institute (Russian Federation)

    2010-11-15T23:59:59.000Z

    Electroluminescence characteristics of light-emitting diodes based on InGaAs/GaAs quantum well heterostructures with an injector layer made of ferromagnetic metal (Ni), semimetal compound (MnSb), or magnetic semiconductor (InMnAs) were comparatively studied. The general feature is electroluminescence quenching as the spacer layer thickness between a quantum well and a magnetic injector decreases. It was found that the temperature dependence of the electroluminescence in diodes with Ni and MnSb is caused by thermal ejection of carriers from the quantum well; in diodes with InMnAs, it is caused by the temperature dependence of the carrier concentration in magnetic semiconductor and thermal ejection of carriers from the quantum well in the high-temperature region.

  18. Effect of ball milling and post-annealing on magnetic properties of Ni49.8Mn28.5Ga21.7 alloy powders

    E-Print Network [OSTI]

    Zheng, Yufeng

    , The University of Western Australia, Crawley WA6009, Australia c Department of Advanced Materials mechanical energy absorption [8,9]. Ni­Mn­Ga powders have been prepared by various methods, including spark

  19. Delocalization and hybridization enhance the magnetocaloric effect in Ni2Mn0.75Cu0.25Ga

    SciTech Connect (OSTI)

    Roy, Sujoy; Blackburn, E.; Valvidares, S. M.; Fitzsimmons, M. R.; Vogel, Sven C.; Khan, M.; Dubenko, I.; Stadler, S.; Ali, N.; Sinha, S. K.; Kortright, J. B.

    2008-11-26T23:59:59.000Z

    In view of the looming energy crisis facing our planet, attention increasingly focuses on materials potentially useful as a basis for energy saving technologies. The discovery of giant magnetocaloric (GMC) compounds - materials that exhibit especially large changes in temperature as the externally applied magnetic field is varied - is one such compound 1. These materials have potential for use in solid state cooling technology as a viable alternative to existing gas based refrigeration technologies that use choro-fluoro - and hydro-fluoro-carbon chemicals known to have a severe detrimental effect on human health and environment 2,3. Examples of GMC compounds include Gd5(SiGe)4 4, MnFeP1-xAsx 5 and Ni-Mn-Ga shape memory alloy based compounds 6-8. Here we explain how the properties of one of these compounds (Ni2MnGa) can be tuned as a function of temperature by adding dopants. By altering the free energy such that the structural and magnetic transitions coincide, a GMC compound that operates at just the right temperature for human requirements can be obtained 9. We show how Cu, substituted for Mn, pulls the magnetic transition downwards in temperature and also, counterintuitively, increases the delocalization of the Mn magnetism. At the same time, this reinforces the Ni-Ga chemical bond, raising the temperature of the martensite-austenite transition. At 25percent doping, the two transitions coincide at 317 K.

  20. Crystal Field Studies on MgGa{sub 2}O{sub 4}:Ni{sup 2+}

    SciTech Connect (OSTI)

    Andreici, L.; Stanciu, M. [Department of Physics, West University of Timisoara, Bd. V. Parvan No. 4, 300223-Timisoara (Romania); Avram, N. M. [Department of Physics, West University of Timisoara, Bd. V. Parvan No. 4, 300223-Timisoara (Romania); Academy of Romanian Scientists, Independentei 54, 050094-Bucharest (Romania)

    2010-08-04T23:59:59.000Z

    The energy levels scheme of octahedrally coordinated Ni{sup 2+} ion in single crystal, powder nano-single crystal, ceramics and glass-ceramics of MgGa{sub 2}O{sub 4} host matrix, has been calculated in the exchange charge model of crystal field. The parameters of the crystal field acting on the Ni{sup 2+} ion are calculated from the crystal structure data, after optimization of the geometry of the system. The energy level schemes have been calculated by diagonalization of the crystal field Hamiltonian of this system. The obtained results were compared with experimental data; a good agreement were demonstrated, which confirm the validity of the model and used method.

  1. Thickness dependence of magnetic anisotropy in thin Ni films electrodeposited onto the (011) and (001) surfaces of n-GaAs

    SciTech Connect (OSTI)

    Gubbiotti, G.; Carlotti, G.; Tacchi, S.; Liu, Y.-K.; Scheck, C.; Schad, R.; Zangari, G. [INFM CRS-SOFT, c/o Universita di Roma 'La Sapienza', I-00185, Rome (Italy); INFM UdR-Perugia, c/o Dipartimento di Fisica, Universita di Perugia, Via A. Pascoli, 06123 Perugia (Italy); INFM-National Center for nanoStructures and bioSystem at Surfaces (S3) Modena, and Dipartimento di Fisica, Universita di Perugia, Via A. Pascoli, 06123 Perugia (Italy); IINFM UdR-Perugia, Dipartimento di Fisica, Universita di Perugia, Via A. Pascoli, 06123 Perugia (Italy); MINT Center, University of Alabama, Tuscaloosa Alabama 35401 (United States); Department of Materials Science and Engineering and Center for Electrochemical Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)

    2005-05-15T23:59:59.000Z

    Brillouin light scattering from thermal spin waves has been exploited to investigate the thickness dependence of magnetic anisotropy of Ni films, with thickness in the range 7-35 nm, grown by electrodeposition onto either (011)- or (001)-GaAs substrates. In the former case, Ni films exhibit a well-defined in-plane uniaxial anisotropy induced by the symmetry of the substrate. In the case of the (001)-GaAs substrate, instead, the magnetic anisotropy results from a combination of both a fourfold and a twofold contribution. The physical mechanisms responsible for the observed anisotropy, as well as its dependence on film thickness, are discussed in detail.

  2. Synthesis of the Sterically Related Nickel Gallanediyl Complexes [Ni(CO)3(GaAr?)] (Ar? = C6H3-2,6-(C6H3-2,6-iPr2)2) and [Ni(CO)3(GaL)] (L = HC[C(CH3)N(C6H3-2,6-iPr2)]2): Thermal Decomposition of [Ni(CO)3(GaAr?)] to give the Cluster [Ni4(CO)7(GaAr?)3

    E-Print Network [OSTI]

    Serrano, Oracio; Hoppe, Elke; Power, Philip P.

    2010-01-01T23:59:59.000Z

    6 H 3 -2,6-(C 6 H 3 -2,6-iPr 2 ) 2 ) and [Ni(CO) 3 (GaL)] (LC(CH 3 )N(C 6 H 3 -2,6-iPr 2 )] 2 ): Thermal DecompositionC 6 H 3 -2,6-(C 6 H 3 -2,6-iPr 2 ) 2 ) and GaL (L = HC[C(Me)

  3. E-Print Network 3.0 - alloy ni-mn-ga single Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mathematics 35 Lattice dynamics and phonon softening in Ni-Mn-Al Heusler alloys Xavier Moya, Llus Maosa,* and Antoni Planes Summary: as 10% have been re- ported in single...

  4. Anti-site disorder and improved functionality of Mn{sub 2}NiX (X = Al, Ga, In, Sn) inverse Heusler alloys

    SciTech Connect (OSTI)

    Paul, Souvik; Kundu, Ashis; Ghosh, Subhradip, E-mail: subhra@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati, Assam 781039 (India); Sanyal, Biplab [Department of Physics and Astronomy, Uppsala University, Box 516, 75120 Uppsala (Sweden)

    2014-10-07T23:59:59.000Z

    Recent first-principles calculations have predicted Mn{sub 2}NiX (X?=?Al, Ga, In, Sn) alloys to be magnetic shape memory alloys. Moreover, experiments on Mn{sub 2}NiGa and Mn{sub 2}NiSn suggest that the alloys deviate from the perfect inverse Heusler arrangement and that there is chemical disorder at the sublattices with tetrahedral symmetry. In this work, we investigate the effects of such chemical disorder on phase stabilities and magnetic properties using first-principles electronic structure methods. We find that except Mn{sub 2}NiAl, all other alloys show signatures of martensitic transformations in presence of anti-site disorder at the sublattices with tetrahedral symmetry. This improves the possibilities of realizing martensitic transformations at relatively low fields and the possibilities of obtaining significantly large inverse magneto-caloric effects, in comparison to perfect inverse Heusler arrangement of atoms. We analyze the origin of such improvements in functional properties by investigating electronic structures and magnetic exchange interactions.

  5. Single crystal neutron diffraction study of lattice and magnetic structures of 5M modulated Ni2Mn1.14Ga0.86

    SciTech Connect (OSTI)

    Pramanick, Abhijit [ORNL] [ORNL; Wang, Xiaoping [ORNL] [ORNL; An, Ke [ORNL] [ORNL; Stoica, Alexandru Dan [ORNL] [ORNL; Hoffmann, Christina [ORNL] [ORNL; Wang, Xun-Li [ORNL] [ORNL

    2012-01-01T23:59:59.000Z

    A comprehensive description of the crystal and magnetic structures of Ni-Mn-Ga magnetic shape memory alloys is important to understand the physical origins of their magnetoelastic properties. These structural details for an off-stoichiometric Ni2Mn1.14Ga0.86 alloy have been obtained from refinement of high-resolution single crystal neutron diffraction data following a (3+1)-dimensional superspace formalism. In particular, the structure adopts a P2/m( 0 )00 (3+1)-D superspace symmetry with the following fundamental lattice parameters: a=4.255(4) , b=5.613(4) , c=4.216(3) , a commensurate periodicity of 5M and a modulation wave vector of . The magnetic moments are aligned along the b-axis. The modulations for atomic site displacements, site occupancies and magnetic moments are elucidated from a (3+1)-D refinement of the neutron diffraction data. In addition to atomic displacements corresponding to shear waves along <110>, distortions of Ni-centric tetrahedra are also evident. Physical interpretations for the different structural distortions and their relationship with magnetic properties are discussed.

  6. Skladenjske posebnosti slovenš?ine v razmerjih glagol – vezljivost – stav?ni vzorec

    E-Print Network [OSTI]

    Žele, Andreja

    2011-01-01T23:59:59.000Z

    združuje osebkovo-povedkovodolo?ilno vlogo (tj. združljivost/kompatibilnost oz. medsebojno odvisnost osebkove in poved- kovodolo?ilne vloge, tako da je osebkova samo formalnostavkotvorna vloga, povedkovodolo?ilna vloga pa je hkrati povedkovniška... pravega konkretnega osebka in zato tudi brez osebila oz. kon?niškega morfema (za izražanje oseb oz. osebka), am- pak ima za izražanje samo oblikovne/formalne dolo?nosti (na samo izrazni ravnini), tj. kon?niško obliko za tretjo osebo ednine, ki v zloženih...

  7. Control of domain wall pinning by localised focused Ga?{sup +} ion irradiation on Au capped NiFe nanowires

    SciTech Connect (OSTI)

    Burn, D. M., E-mail: d.burn@imperial.ac.uk; Atkinson, D. [Department of Physics, Durham University, Durham (United Kingdom)

    2014-10-28T23:59:59.000Z

    Understanding domain wall pinning and propagation in nanowires are important for future spintronics and nanoparticle manipulation technologies. Here, the effects of microscopic local modification of the magnetic properties, induced by focused-ion-beam intermixing, in NiFe/Au bilayer nanowires on the pinning behavior of domain walls was investigated. The effects of irradiation dose and the length of the irradiated features were investigated experimentally. The results are considered in the context of detailed quasi-static micromagnetic simulations, where the ion-induced modification was represented as a local reduction of the saturation magnetization. Simulations show that domain wall pinning behavior depends on the magnitude of the magnetization change, the length of the modified region, and the domain wall structure. Comparative analysis indicates that reduced saturation magnetisation is not solely responsible for the experimentally observed pinning behavior.

  8. E-Print Network 3.0 - avaryiyi za dopomogoyu Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for: avaryiyi za dopomogoyu Page: << < 1 2 3 4 5 > >> 1 Identification of the protein folding transition state from molecular dynamics trajectories Summary: - ble S-1 12;Muff...

  9. Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n{sup +}-In{sub 0.53} Ga{sub 0.47}As

    SciTech Connect (OSTI)

    Abraham, Michael; Yu, Shih-Ying; Choi, Won Hyuck; Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Lee, Rinus T. P. [SEMATECH, 257 Fuller Road, Suite 2200, Albany, New York 12203 (United States)

    2014-10-28T23:59:59.000Z

    Successful application of the silicide-like Ni{sub x}InGaAs phase for self-aligned source/drain contacts requires the formation of low-resistance ohmic contacts between the phase and underlying InGaAs. We report Ni-based contacts to InP-capped and uncapped n{sup +}- In{sub 0.53}Ga{sub 0.47}As (N{sub D}?=?3?×?10{sup 19?}cm{sup ?3}) with a specific contact resistance (?{sub c}) of 4.0 × 10{sup ?8?}±?7 × 10{sup ?9} ?·cm{sup 2} and 4.6 × 10{sup ?8?}±?9 × 10{sup ?9} ?·cm{sup 2}, respectively, after annealing at 350?°C for 60?s. With an ammonium sulfide pre-metallization surface treatment, ?{sub c} is further reduced to 2.1 × 10{sup ?8?}±?2 × 10{sup ?9} ?·cm{sup 2} and 1.8 × 10{sup ?8?}±?1 × 10{sup ?9} ?·cm{sup 2} on epilayers with and without 10?nm InP caps, respectively. Transmission electron microscopy reveals that the ammonium sulfide surface treatment results in more complete elimination of the semiconductor's native oxide at the contact interface, which is responsible for a reduced contact resistance both before and after annealing.

  10. Review of Andreja Markovi?, et al., Slovenska beseda v živo: u?benik za za?etni te?aj slovenš?ine kot drugega/tujega jezika; Andreja Markovi?, et al., S slovenš?ino nimam težav: u?benik za kratke te?aje slovenš?ine: nadaljevalna stopnja; Nataša Pirih Svetina, Andreja Ponikvar. A, B, C . . . 1, 2, 3, gremo . . . U?benik za za?etnike na kratkih te?ajih slovenš?ine kot drugega/tujega jezika

    E-Print Network [OSTI]

    Pirnat-Greenberg, Marta

    2007-01-01T23:59:59.000Z

    REVIEWS 107 Andreja Markovi?, Danuša Škapin, Katarina Rigler Šilc, Špela Kaji? Kmeti?. Slovenska beseda v živo: u?benik za za?etni te?aj slovenš?ine kot drugega/tujega jezika. Third edition. Ljubljana: Center za slovenš?ino kot drugi/tuji jezik pri... Oddelku za slovenistiko Filozofske fakultete, 2002 [3rd edition]. 211 pp., €29.53 [= $38.46] (paper). ISBN: 961-6200-80-1. Andreja Markovi?, Vesna Halužan, Mateja Pezdirc Bartol, Danuša Škapin, Gita Vuga. S slovenš?ino nimam težav: u?benik za kratke te?aje...

  11. High strain in polycrystalline Ni{sub 48.8}Mn{sub 31.4}Ga{sub 19.8} Heusler alloys under overlapped static and oscillating magnetic fields

    SciTech Connect (OSTI)

    Montanher, D. Z.; Pereira, J. R. D.; Cótica, L. F.; Santos, I. A. [Department of Physics, State University of Maringá, Av. Colombo 5790, Maringá - PR 87020-900 (Brazil); Gotardo, R. A. M. [Technological Federal University of Paraná, Av. Alberto Carazzai 1640, Cornélio Procópio - PR 86300-000 (Brazil); Viana, D. S. F.; Garcia, D.; Eiras, J. A. [Department of Physics, Federal University of São Carlos, Rod. Washington Luiz, Km 235, São Carlos - SP 13565-905 (Brazil)

    2014-09-21T23:59:59.000Z

    Martensitic polycrystalline Ni{sub 48.8}Mn{sub 31.4}Ga{sub 19.8} Heusler alloys, with a stacking period of 14 atomic planes at room temperature, were innovatively processed by combining high-energy ball milling and powder metallurgy. Bulk samples were mechanically coupled to a piezoelectric material in a parallel configuration, and the mechanical deformation of the studied system due to the twin's variant motion was investigated under overlapped static and oscillating magnetic fields. A reversible and high mechanical deformation is observed when the frequency of the oscillating magnetic field is tuned with the natural vibration frequency of this system. In this condition, a linear deformation as a function of the static magnetic field amplitude occurs in the ±4 kOe range, and a mechanical deformation of 2% at 10 kOe is observed.

  12. TISKOVINFORMACE Cenu Siemens 2012 za nejvznamnjs inovaci zskali vdci z Brna

    E-Print Network [OSTI]

    Savicky, Petr

    TISKOVÁINFORMACE Cenu Siemens 2012 za nejvýznamnjsí inovaci získali vdci z Brna (Brno, 4. prosince soutze Werner von Siemens Excellence Award 2012 v kategorii: Nejvýznamnjsí výsledek vývoje/inovace. K vyhlásení vítz Ceny Siemens pro letosní rok doslo vcera v prazské Betlémské kapli. Jde o výrazný úspch

  13. Shape memory response of ni2mnga and nimncoin magnetic shape memory alloys under compression

    E-Print Network [OSTI]

    Brewer, Andrew Lee

    2009-05-15T23:59:59.000Z

    In this study, the shape memory response of Ni2MnGa and NiMnCoIn magnetic shape memory alloys was observed under compressive stresses. Ni2MnGa is a magnetic shape memory alloy (MSMA) that has been shown to exhibit fully reversible, stressassisted...

  14. Author Addresses: J.A. van Biljon, School of Computing, University of South Africa, P O Box 392, UNISA, 0003, South Africa; vbiljja@unisa.ac.za

    E-Print Network [OSTI]

    Williamson, John

    Addresses: J.A. van Biljon, School of Computing, University of South Africa, P O Box 392, UNISA, 0003, South Africa; vbiljja@unisa.ac.za P Kotze, School of Computing, University of South Africa, P O Box 392, UNISA, 0003, South Africa; kotzep@unisa.ac.za K. V. Renaud, Department of Computing Science, The University

  15. alloy films ni: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    memory alloy Elastic modulus Wrinkling Thermoelastic strain in a polycrystalline Fe-Pd thin film 22 Magnetic and Structural Properties of Ni-Mn-Ga Films Produced Via Physical...

  16. Generalized Uhlenbeck-Goudsmit hypothesis 'Magnetic' S^{a} and 'Electric' Z^{a} Spins

    E-Print Network [OSTI]

    Tomislav Ivezic

    2010-03-23T23:59:59.000Z

    In this paper, the connection between the dipole moment tensor D^{ab} and the spin four-tensor S^{ab} is formulated in the form of the generalized Uhlenbeck-Goudsmit hypothesis, D^{ab}=g_{S}S^{ab}. It is also found that the spin four-tensor S^{ab} can be decomposed into two 4-vectors, the usual `space-space' intrinsic angular momentum S^{a}, which will be called `magnetic' spin (mspin), and a new one, the `time-space' intrinsic angular momentum Z^{a}, which will be called `electric' spin (espin). Both spins are equally good physical quantities. Taking into account the generalized Uhlenbeck-Goudsmit hypothesis, the decomposition of S^{ab} and the decomposition of D^{ab} into the dipole moments m^{a} and d^{a}, we find that an electric dipole moment (EDM) of a fundamental particle, as a four-dimensional (4D) geometric quantity, is determined by Z^{a} and not, as generally accepted, by the spin $\\mathbf{S}$ as a 3-vector. Also it is shown that neither the T inversion nor the P inversion are good symmetries in the 4D spacetime. In this geometric approach, only the world parity W, Wx^{a}=-x^{a}, is well defined in the 4D spacetime. Some consequences for elementary particle theories and experiments that search for EDM are briefly discussed.

  17. IEEE TRANSACTIONS ON MAGNETICS, VOL. 38, NO. 4, JULY 2002 1803 New Ni5Al3 Underlayer for Longitudinal

    E-Print Network [OSTI]

    Laughlin, David E.

    IEEE TRANSACTIONS ON MAGNETICS, VOL. 38, NO. 4, JULY 2002 1803 New Ni5Al3 Underlayer--We describe a new Ni5Al3 underlayer for high-den- sity longitudinal magnetic recording. The Ni5Al3 underlayer has the FCC derivative Ga3Pt5 structure. The Ni5Al3 (221) plane has good lattice match with the Co

  18. WORLDVIEW THEORY AND THE CONCEPTUALISATION OF SPACE Marc Schfer, Rhodes University, Grahamstown, South Africa, M.Schafer@ru.ac.za

    E-Print Network [OSTI]

    Spagnolo, Filippo

    , Grahamstown, South Africa, M.Schafer@ru.ac.za Introduction The aim of this paper and presentation is to shareMathematicsin South Africa for example, sees space and shape within a context of social experiences. One and representexperienceswithshape,space,timeand motion, using all available senses" (Republic of South Africa, 1997). This apparent

  19. THEORY OF THE NiH 2 COMPLEX IN Si AND THE CuH 2 COMPLEX IN R. JONES 1 , J. GOSS 1 , S.

    E-Print Network [OSTI]

    Ferreira-Resende, António

    THEORY OF THE NiH 2 COMPLEX IN Si AND THE CuH 2 COMPLEX IN GaAs R. JONES 1 , J. GOSS 1 , S. ¨ OBERG­ eral models of NiH 2 are investigated and it is shown that one, with H located at anti­bonding sites, with tetrahedral H­terminated clusters containing 133 atoms in the configuration NiSi 70 H 62 #12; for NiH 2

  20. DYNAMICAL PROPERTIES OF Ni 2 MnGa DETERMINED FROM

    E-Print Network [OSTI]

    Entel, P.

    , Germany b Physics Department, Chelyabinsk State University, 454021 Chelyabinsk, Russia (Phase Transitions

  1. A GINZBURG-LANDAU THEORY FOR Ni-Mn-Ga

    E-Print Network [OSTI]

    Entel, P.

    Tieftemperaturphysik, Gerhard-Mercator-Universit¨at, 47048 Duisburg, Germany b Physics Department, Chelyabinsk State University, 454021 Chelyabinsk, Russia (Received ...) Abstract We present an effective Ginzburg-Landau theory

  2. Ni Ni: University of California - Los Angeles

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the Contributions andDataNationalNewport News Business55NewsNextNextEra EnergyEsmond G.Ni

  3. Za Sciences National Research

    E-Print Network [OSTI]

    Bdlolo@omlIXmn ~ry E** UbmmrlOm mumoRY a C!EOPPIN Q.DA= O'KELLET F'10ri&~ tlbiwrd~ W IU~ N-MI hho~ GxmE A

  4. Bulk Migration of Ni/NiO in Ni-YSZ during Reducing Conditions

    SciTech Connect (OSTI)

    Saraf, Laxmikant V.; Baer, Donald R.; Lea, Alan S.; Zhu, Zihua; Strohm, James J.; Sitzman, S. D.; King, David L.

    2010-02-09T23:59:59.000Z

    Understanding the migration of Ni/NiO in Ni-YSZ can potentially help to design a better solid oxide fuel cell (SOFC) anode. We have observed that extensive hydrogen reduction and methane steam reforming of Ni-YSZ caused bulk migration of Ni/NiO to at least ~ 5 µm deeper from the Ni-YSZ surface. No significant bulk migration effects were detected after simple thermal treatments in non-reducing/non-reforming environment. Surface analysis of a single zirconia grain in the first 10-20 nm region from annealed, hydrogen reduced and methane steam reformed Ni-YSZ shows Ni-enriched surface supporting earlier claims of Ni exsolution. 3D-EBSD analysis of thermally treated sample before exposing it to reducing and reforming environment indicated mixed NiO/YSZ phase with some porosity and random grain orientation. The surface analysis and mapping were carried out using ToF-SIMS and AES whereas EDS maps on FIB sliced areas on Ni-YSZ were utilized for the bulk analysis. The results provide additional information related to complex reactions occurring in SOFC during internal reforming conditions.

  5. ISSN 0378-4738 = Water SA Vol. 27 No. 1 January 2001 71Available on website http://www.wrc.org.za Plant-soil interactions of sludge-borne heavy metals and the

    E-Print Network [OSTI]

    ISSN 0378-4738 = Water SA Vol. 27 No. 1 January 2001 71Available on website http://www.wrc.org.za Plant-soil interactions of sludge-borne heavy metals and the effect on maize (Zea mays L.) seedling, Pretoria 0001, South Africa 2 ERWAT Chair in Wastewater Management, Water Utilisation Section, Department

  6. Ga nanoparticle-enhanced photoluminescence of GaAs

    SciTech Connect (OSTI)

    Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States); Katzenstein, A. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Eckerd College, St. Petersburg, Florida 33711-4744 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-09-02T23:59:59.000Z

    We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

  7. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01T23:59:59.000Z

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  8. Large -Delayed Neutron Emission Probabilities in the 78Ni Region

    SciTech Connect (OSTI)

    Winger, J. A. [Mississippi State University (MSU); Rykaczewski, Krzysztof Piotr [ORNL; Gross, Carl J [ORNL; Grzywacz, Robert Kazimierz [ORNL; Shapira, Dan [ORNL

    2009-01-01T23:59:59.000Z

    The -delayed neutron branching ratios (P n) for nuclei near doubly magic 78Ni have been directly measured using a new method combining high-resolution mass separation, reacceleration, and digital - spectroscopy of 238U fission products. The P n values for the very neutron-rich isotopes 76 78Cu and 83Ga were found to be much higher than previously reported and predicted. Revised calculations of the n process, accounting for new mass measurements and an inversion of the 2p3/2 and 1f5/2 orbitals, are in better agreement with these new experimental results.

  9. Structure, transport and thermal properties of UCoGa

    SciTech Connect (OSTI)

    Purwanto, A.; Robinson, R.A. [Los Alamos National Lab., NM (United States); Prokes, K. [Amsterdam Univ. (Netherlands). Van der Waals Lab.] [and others

    1994-04-01T23:59:59.000Z

    By means of neutron powder diffraction, we find that UCoGa crystallizes in the hexagonal ZrNiAl structure and orders ferromagnetically at low temperatures with magnetic moments stacked along the c axis. The magnetic-ordering temperature is reflected in anomalies in the temperature dependencies of the electrical resistivity and the specific heat at Tc = 47 K. Furthermore, the strong anisotropy in the electrical resistivity for i {parallel} c and i {perpendicular} c indicates a significant contribution of the magnetic anisotropy to the electrical resistivity.

  10. Giant Quadrupole-Resonance in Ni Isotopes

    E-Print Network [OSTI]

    Youngblood, David H.; Lui, YW; Garg, U.; Peterson, R. J.

    1992-01-01T23:59:59.000Z

    Inelastic scattering of 129 MeV alpha particles has been used to excite the giant quadrupole resonance in Ni-58, Ni-60, Ni-62, Ni-64. The resonance was found to exhaust 58 +/- 12%, 76 +/- 14%, 78 +/- 14%, and 90 +/-16% of the E2 energy-weighted sum...

  11. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-07-07T23:59:59.000Z

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  12. Composition and Interface Analysis of InGaN/GaN Multiquantum...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

  13. Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

    SciTech Connect (OSTI)

    Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

    2013-08-19T23:59:59.000Z

    We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

  14. Influence of nuclear structure on sub-barrier hindrance in Ni+Ni fusion

    E-Print Network [OSTI]

    C. L. Jiang; K. E. Rehm; R. V. F. Janssens; H. Esbensen; I. Ahmad; B. B. Back; P. Collon; C. N. Davids; J. P. Greene; D. J. Henderson; G. Mukherjee; R. C. Pardo; M. Paul; T. O. Pennington; D. Seweryniak; S. Sinha; Z. Zhou

    2004-02-25T23:59:59.000Z

    Fusion-evaporation cross sections for $^{64}$Ni+$^{64}$Ni have been measured down to the 10 nb level. For fusion between two open-shell nuclei, this is the first observation of a maximum in the $S$-factor, which signals a strong sub-barrier hindrance. A comparison with the $^{58}$Ni+$^{58}$Ni, $^{58}$Ni+$^{60}$Ni, and $^{58}$Ni+$^{64}$Ni systems indicates a strong dependence of the energy where the hindrance occurs on the stiffness of the interacting nuclei.

  15. The Obviative Suffix -ni- In Algonquian

    E-Print Network [OSTI]

    Gathercole, Geoffrey

    1979-01-01T23:59:59.000Z

    the marker -ni- is used specifically when an argument has been established as obviative earlier in the discourse. By tracing -ni- in the morphology of Fox and Kickapoo and in Bloomfield's comparative Algonquian work (Bloomfield 1946), the present paper...

  16. Kinetics of Ni Sorption in Soils: Roles of Soil Organic Matter and Ni Precipitation

    E-Print Network [OSTI]

    Sparks, Donald L.

    sorption in soils may be controlled by different reaction mechanisms at various time scales be an important path for Ni sequestration in soils.9 The mechanisms of Ni-LDH formation have been investigatedKinetics of Ni Sorption in Soils: Roles of Soil Organic Matter and Ni Precipitation Zhenqing Shi

  17. Characterisation of Ga-coated and Ga-brazed aluminium

    SciTech Connect (OSTI)

    Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

    2012-05-15T23:59:59.000Z

    This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

  18. Microstructural Characterization and Shape Memory Response of Ni-Rich NiTiHf and NiTiZr High Temperature Shape Memory Alloys

    E-Print Network [OSTI]

    Evirgen, Alper

    2014-08-14T23:59:59.000Z

    NiTiHf and NiTiZr high temperature shape memory alloys (HTSMAs) have drawn a great deal of attention as cheaper alternatives to Pt, Pd and Au alloyed NiTi-based HTSMAs while NiTiZr alloys also providing at least 20% weight reduction then its Ni...

  19. Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes

    SciTech Connect (OSTI)

    Chung, Kunook; Beak, Hyeonjun; Tchoe, Youngbin; Oh, Hongseok; Yi, Gyu-Chul, E-mail: gcyi@snu.ac.kr [Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); Yoo, Hyobin; Kim, Miyoung [Department of Materials Science and Engineering, Seoul National University, Seoul 151-744 (Korea, Republic of)

    2014-09-01T23:59:59.000Z

    We report the growth of GaN micro-rods and coaxial quantum-well heterostructures on graphene films, together with structural and optical characterization, for applications in flexible optical devices. Graphene films were grown on Cu foil by means of chemical vapor deposition, and used as the substrates for the growth of the GaN micro-rods, which were subsequently transferred onto SiO{sub 2}/Si substrates. Highly Si-doped, n-type GaN micro-rods were grown on the graphene films using metal–organic chemical vapor deposition. The growth and vertical alignment of the GaN micro-rods, which is a critical factor for the fabrication of high-performance light-emitting diodes (LEDs), were characterized using electron microscopy and X-ray diffraction. The GaN micro-rods exhibited promising photoluminescence characteristics for optoelectronic device applications, including room-temperature stimulated emission. To fabricate flexible LEDs, In{sub x}Ga{sub 1–x}N/GaN multiple quantum wells and a p-type GaN layer were deposited coaxially on the GaN micro-rods, and transferred onto Ag-coated polymer substrates using lift-off. Ti/Au and Ni/Au metal layers were formed to provide electrical contacts to the n-type and p-type GaN regions, respectively. The micro-rod LEDs exhibited intense emission of visible light, even after transfer onto the flexible polymer substrate, and reliable operation was achieved following numerous cycles of mechanical deformation.

  20. Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors

    E-Print Network [OSTI]

    Florida, University of

    energy loss spectroscopy [23]. In contrast, HEMTs utilizing a Pt liner layer did not show the same gate electrical contact to the 2DEG. However, when stressing occurs in O2 or air, the O2 present reacts

  1. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

    2012-12-15T23:59:59.000Z

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  2. GA Solar | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpen EnergyBoard" form. To create aGA SNC Solar Jump to:GA-Solar

  3. Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells

    E-Print Network [OSTI]

    Atwater, Harry

    Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

  4. Native point defects in GaSb

    SciTech Connect (OSTI)

    Kujala, J.; Segercrantz, N.; Tuomisto, F.; Slotte, J. [Department of Applied Physics, Aalto University School of Science, P.O. Box 14100, FI-00076 AALTO (Finland)

    2014-10-14T23:59:59.000Z

    We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p- and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude. We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals.

  5. Transformation Induced Fatigue of Ni-Rich NiTi Shape Memory Alloy Actuators

    E-Print Network [OSTI]

    Schick, Justin Ryan

    2011-02-22T23:59:59.000Z

    In this work the transformation induced fatigue of Ni-rich NiTi shape memory alloys (SMAs) was investigated. The aerospace industry is currently considering implementing SMA actuators into new applications. However, before any new applications can...

  6. Intern experience at Raba-Kistner Consultants, Inc.: an internship report

    E-Print Network [OSTI]

    Johnson, William T.

    2013-03-13T23:59:59.000Z

    Society of Professional Engineers ........... 101 American Welding Society .............................. 101 Texas Council of Engineering Laboratories ......... 102 American Council of Independent Laboratories . . . . 102 CHAPTER VII - EVALUATION...- CO I o LU h- Ge o. and Ex pl . | En gi ne er in g In sp . and Te st . Co ns ul t. Ch em . En v. En g. Sc i. Che mi str y La b FI GU RE 2 - COMPA NY OR GA NI ZA TI ON CH AR...

  7. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01T23:59:59.000Z

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  8. Beta decay of Ga-62

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    from the ex- perimental ft value for a 01?01 b decay between analog states with the relation @3# 0556-2813/2003/68~1!/015501~6!/$20.00 68 015501- of 62Ga . Hardy, V. E. Mayes, R. G. Neilson, M. Sanchez-Vega, and R. E. Tribble y, College Station...

  9. Monopole Strength in Ni-58

    E-Print Network [OSTI]

    Youngblood, David H.; Lui, YW.

    1991-01-01T23:59:59.000Z

    PHYSICAL REVIEW C VOLUME 44, NUMBER 5 Monopole strength in Ni NOVEMBER 1991 D. H. Youngblood and Y.-W. Lui Cyclotron Institute, Texas AdkM Uni Uersi ty, College Station, Texas 77843 (Received 20 June 1991) Differential cross-section data from... strength is locat- ed nearer the quadrupole (for Ca [3] and Si [4] at vir- tually the same energy). Only two reports of substantial strength in lighter nuclei are in the literature. Lui et al. [4] reported 66%%uo of the EO energy-weighted sum rule...

  10. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

    SciTech Connect (OSTI)

    Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

    2012-01-01T23:59:59.000Z

    AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

  11. anketo chosa ni: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Summary: Recent research shows that the resistance switching characteristics of NiO thin film, in combinations conversion into NiSi using Ni-AMD, and discuss the chemistry of...

  12. anteisei ni kansuru: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Summary: Recent research shows that the resistance switching characteristics of NiO thin film, in combinations conversion into NiSi using Ni-AMD, and discuss the chemistry of...

  13. atsumitsu katei ni: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Summary: Recent research shows that the resistance switching characteristics of NiO thin film, in combinations conversion into NiSi using Ni-AMD, and discuss the chemistry of...

  14. arikata ni kansuru: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Summary: Recent research shows that the resistance switching characteristics of NiO thin film, in combinations conversion into NiSi using Ni-AMD, and discuss the chemistry of...

  15. ataeru eikyo ni: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Summary: Recent research shows that the resistance switching characteristics of NiO thin film, in combinations conversion into NiSi using Ni-AMD, and discuss the chemistry of...

  16. aisorui ni taisuru: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Summary: Recent research shows that the resistance switching characteristics of NiO thin film, in combinations conversion into NiSi using Ni-AMD, and discuss the chemistry of...

  17. anzensei ni kansuru: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Summary: Recent research shows that the resistance switching characteristics of NiO thin film, in combinations conversion into NiSi using Ni-AMD, and discuss the chemistry of...

  18. Electrodeposited NiCo/Cu Superlattices

    SciTech Connect (OSTI)

    Safak, M.; Alper, M. [Department of Physics, Faculty of Science and Literature, University of Uludag, Goeruekle, Bursa (Turkey)

    2007-04-23T23:59:59.000Z

    NiCo/Cu superlattices were electrodeposited on polycrystalline Cu substrates from a single electrolyte under potentiostatic control. The X-ray diffraction (XRD) patterns showed that NiCo/Cu superlattices have the same crystal structure and texture as in their substrates. The films exhibited giant magnetoresistance (GMR) or anisotropic magnetoresistance (AMR), depending on the Cu layer thicknesses.

  19. Nanoscale structural heterogeneity in Ni-rich half-Heusler TiNiSn

    SciTech Connect (OSTI)

    Douglas, Jason E., E-mail: jedouglas@mrl.ucsb.edu; Pollock, Tresa M. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Materials Research Laboratory, University of California, Santa Barbara, California 93106 (United States); Chater, Philip A. [Diamond Light Source, Chilton, Oxfordshire OX11 0DE (United Kingdom); Brown, Craig M. [Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Department of Chemical Engineering, University of Delaware, Newark, Delaware 19716 (United States); Seshadri, Ram [Materials Department, University of California, Santa Barbara, California 93106 (United States); Materials Research Laboratory, University of California, Santa Barbara, California 93106 (United States); Department of Chemistry and Biochemistry, University of California, Santa Barbara, California 93106 (United States)

    2014-10-28T23:59:59.000Z

    The structural implications of excess Ni in the TiNiSn half-Heusler compound are examined through a combination of synchrotron x-ray and neutron scattering studies, in conjunction with first principles density functional theory calculations on supercells. Despite the phase diagram suggesting that TiNiSn is a line compound with no solid solution, for small x in TiNi{sub 1+x}Sn there is indeed an appearance—from careful analysis of the scattering—of some solubility, with the excess Ni occupying the interstitial tetrahedral site in the half-Heusler structure. The analysis performed here would point to the excess Ni not being statistically distributed, but rather occurring as coherent nanoclusters. First principles calculations of energetics, carried out using supercells, support a scenario of Ni interstitials clustering, rather than a statistical distribution.

  20. Purification and Characterization of [NiFe]-Hydrogenase of Shewanella...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Purification and Characterization of NiFe-Hydrogenase of Shewanella oneidensis MR-1. Purification and Characterization of NiFe-Hydrogenase of Shewanella oneidensis MR-1....

  1. al ni shape: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NiAl NANOLAMINATES . Open Access Theses and Dissertations Summary: ??To characterize the self-propagating, high-temperature exothermic alloying reactions of NiAl nanoscaled...

  2. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01T23:59:59.000Z

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  3. Structural and Dynamical Fluctuations in Off-Stoichiometric NiMnGa Shape-Memory Alloys

    SciTech Connect (OSTI)

    Barabash, Rozaliya [ORNL] [ORNL; Barabash, Oleg M [ORNL] [ORNL; Karapetrova, Evgenia [University of Illinois, Urbana-Champaign] [University of Illinois, Urbana-Champaign; Manley, Michael E [ORNL] [ORNL

    2014-01-01T23:59:59.000Z

    3D diffuse scattering dataset in the temperature region of the existence of high temperature cubic L21 phase reveals localized intensity maxima related to phason modes. Peierls instability induced tetragonal distortions in the pre-martensitic phase cause strong diffuse scattering. Around (H0H) reflections diffuse scattering is strongly compressed along the [H0H] and enhanced along the [-H0H] direction.

  4. Acoustic assisted actuation of Ni-Mn-Ga ferromagnetic shape memory alloys

    E-Print Network [OSTI]

    Peterson, Bradley William

    2006-01-01T23:59:59.000Z

    Ferromagnetic shape memory alloys (FSMA) have been shown in recent work to exhibit large magnetic field induced strains. The material generally requires a large threshold field (of order 3-4 kOe) to initiate the strain. ...

  5. Intra-variant Substructure in Ni-Mn-Ga Martensite: Conjugation Boundaries .

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFunInfrared LandResponses to EngineeredA GENERAL2Radiative Transfer| EMSL

  6. Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2007-02-01T23:59:59.000Z

    The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

  7. Ni{sub 3}Al aluminide alloys

    SciTech Connect (OSTI)

    Liu, C.T.

    1993-10-01T23:59:59.000Z

    This paper provides a brief review of the recent progress in research and development of Ni{sub 3}Al and its alloys. Emphasis has been placed on understanding low ductility and brittle fracture of Ni{sub 3}Al alloys at ambient and elevated temperatures. Recent studies have resulted in identifying both intrinsic and extrinsic factors governing the fracture behavior of Ni{sub 3}Al alloys. Parallel efforts on alloy design using physical metallurgy principles have led to properties for structural use. Industrial interest in these alloys is high, and examples of industrial involvement in processing and utilization of these alloys are briefly mentioned.

  8. Thermal diffusion in Ni/Al multilayer

    SciTech Connect (OSTI)

    Swain, M.; Bhattacharya, D.; Singh, S.; Basu, S. [Solid State Physics Division, Bhabha Atomic Research Center, Mumbai 400085 (India); Gupta, M. [UGC-DAE-Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452017 (India)

    2013-02-05T23:59:59.000Z

    Two Ni/Al multilayers deposited by ion beam sputtering of nominal design [Ni(200A)/Al(100A)] Multiplication-Sign 5 and [Ni(50A)/Al(227A)] Multiplication-Sign 5 on Si substrates were annealed at 200 Degree-Sign C. As-deposited and annealed samples were characterized by x-ray diffraction (XRD) and x-ray reflectometry (XRR). The effort was to study the path of alloying in the above two multilayers of same elements but of opposite stoichiometric ratio. We find distinct differences in alloying of these samples.

  9. Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    Gao, Feng, Ph. D. Massachusetts Institute of Technology

    2014-01-01T23:59:59.000Z

    AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

  10. Siemens Pittsburgh, PA Novelis Corporation Atlanta, GA

    E-Print Network [OSTI]

    McGaughey, Alan

    Industrial Design ­ Shanghai, China Eaton Corporation ­ Pittsburgh, PA CMU, CTTEC ­ PittsburghSiemens ­ Pittsburgh, PA Novelis Corporation ­ Atlanta, GA Expense

  11. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  12. Metastable phase diagram for Ni-implanted Al and pulse surface melted Al(Ni)

    SciTech Connect (OSTI)

    Follstaedt, D.M.; Picraux, S.T.

    1984-01-01T23:59:59.000Z

    The microstructure of <110> Al implanted with Ni was examined before and after subsequent electron beam pulsed surface melting (65 ns, 1.7 J/cm/sup 2/). Both processes were done with the Al substrate at room temperature. Implantation at several energies (160 to 15 keV) into a given sample produced a nearly constant measured Ni concentration through a approx. 0.1 ..mu..m region below the surface (7). Such samples with concentrations from 8 to 25 at. % Ni were examined, along with a sample with a peak concentration of 32 at. % Ni.

  13. Electroslag surfacing of steel shafting with Ni alloy 625 and 70Cu-30Ni strip

    SciTech Connect (OSTI)

    Devletian, J.H.; Gao, Y.P.; Wood, W.E. [Oregon Graduate Inst. of Science and Technology, Portland, OR (United States)

    1996-12-31T23:59:59.000Z

    A comprehensive study of electroslag surfacing (ESS) of steel with Ni Alloy 625 and 70Cu-30Ni strip electrodes was conducted to establish the feasibility of replacing forged bearing sleeves on propulsion shafting with integral weld surfacing. The base material was MIL-S-23284, Class 1 steel in the form of 41--66 cm (16--26 in.) diameter shafting and 76 mm (3 in.) thick flat plate. All ESS was carried out at a heat input level of approximately 5.9kJ/mm (150 kJ/in.) using 30 x 0.5 mm (1.2 x 0.02 in.) strip electrodes. Assessments of mechanical properties and microstructure of Ni Alloy 625 surfacing and 70Cu-30Ni surfacing were conducted to establish the structure-property relationships in these complex alloy systems. In addition, a solidification cracking test was developed to determine the relative cracking susceptibilities of these strip surfacing alloys. Although the Ni Alloy 625 surfacing contained small islands of interdendritic MC type carbides and Laves phase, the mechanical properties of this surfacing were satisfactory. The 70Cu-30Ni surfacing required a buttering layer of 30Cu-70Ni or pure Ni to prevent solidification cracking. The inherent ductility-dip sensitivity of 70Cu-30Ni surfacing was overcome by the development of a suitable ESS procedure.

  14. New Ni Amidinate Source for ALD/CVD of NiNx, NiO and NiSi , Thiloma Perera1

    E-Print Network [OSTI]

    to be particularly important in memory as well as logic applications. Nickel silicide (NiSi) is emerging with a metal-insulator-metal (MIM) structure, offer potential applications for the next generation nonvolatile

  15. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01T23:59:59.000Z

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  16. FUPWG Meeting Agenda - Atlanta, GA | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA Energy on My Mind FUPWG Atlanta, GA May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta,...

  17. TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer

    SciTech Connect (OSTI)

    Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

    2008-01-01T23:59:59.000Z

    It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

  18. Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

  19. Electronic circuits having NiAl and Ni.sub.3 Al substrates

    DOE Patents [OSTI]

    Deevi, Seetharama C. (Midlothian, VA); Sikka, Vinod K. (Oak Ridge, TN)

    1999-01-01T23:59:59.000Z

    An electronic circuit component having improved mechanical properties and thermal conductivity comprises NiAl and/or Ni.sub.3 Al, upon which an alumina layer is formed prior to applying the conductive elements. Additional layers of copper-aluminum alloy or copper further improve mechanical strength and thermal conductivity.

  20. Ni Sorption on Pyrophyllite: Evidence for the Formation of Ni-Al Hydroxide and Its Transformation into Ni-Silicate by Visible,

    E-Print Network [OSTI]

    Sparks, Donald L.

    into Ni-Silicate by Visible, Infrared and XANES Spectroscopy and Thermogravimetry A. C. Scheinost, R. G suggest either the formation of layered double hydroxides or of layer silicates. Desorption studies polymerization of SiO causes the formation of 1:1 or 2:1 Ni silicates, where the original Ni-Al hydroxide

  1. Photosensitivity of the Ni-A state of [NiFe] hydrogenase from Desulfovibrio vulgaris Miyazaki F with visible light

    SciTech Connect (OSTI)

    Osuka, Hisao [Graduate School of Life Science, University of Hyogo, 3-2-1, Koto, Kamigori-cho, Ako-gun, Hyogo 678-1297 (Japan) [Graduate School of Life Science, University of Hyogo, 3-2-1, Koto, Kamigori-cho, Ako-gun, Hyogo 678-1297 (Japan); Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5, Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan); Shomura, Yasuhito; Komori, Hirofumi; Shibata, Naoki [Graduate School of Life Science, University of Hyogo, 3-2-1, Koto, Kamigori-cho, Ako-gun, Hyogo 678-1297 (Japan)] [Graduate School of Life Science, University of Hyogo, 3-2-1, Koto, Kamigori-cho, Ako-gun, Hyogo 678-1297 (Japan); Nagao, Satoshi [Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5, Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan)] [Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5, Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan); Higuchi, Yoshiki, E-mail: hig@sci.u-hyogo.ac.jp [Graduate School of Life Science, University of Hyogo, 3-2-1, Koto, Kamigori-cho, Ako-gun, Hyogo 678-1297 (Japan) [Graduate School of Life Science, University of Hyogo, 3-2-1, Koto, Kamigori-cho, Ako-gun, Hyogo 678-1297 (Japan); CREST, JST, Gobancho, Chiyoda-ku, Tokyo 102-0076 (Japan); Hirota, Shun, E-mail: hirota@ms.naist.jp [Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5, Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan) [Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5, Takayama-cho, Ikoma-shi, Nara 630-0192 (Japan); CREST, JST, Gobancho, Chiyoda-ku, Tokyo 102-0076 (Japan)

    2013-01-04T23:59:59.000Z

    Highlights: Black-Right-Pointing-Pointer Ni-A state of [NiFe] hydrogenase showed light sensitivity. Black-Right-Pointing-Pointer New FT-IR bands were observed with light irradiation of the Ni-A state. Black-Right-Pointing-Pointer EPR g-values of the Ni-A state shifted upon light irradiation. Black-Right-Pointing-Pointer The light-induced state converted back to the Ni-A state under the dark condition. -- Abstract: [NiFe] hydrogenase catalyzes reversible oxidation of molecular hydrogen. Its active site is constructed of a hetero dinuclear Ni-Fe complex, and the oxidation state of the Ni ion changes according to the redox state of the enzyme. We found that the Ni-A state (an inactive unready, oxidized state) of [NiFe] hydrogenase from Desulfovibrio vulgaris Miyazaki F (DvMF) is light sensitive and forms a new state (Ni-AL) with irradiation of visible light. The Fourier transform infrared (FT-IR) bands at 1956, 2084 and 2094 cm{sup -1} of the Ni-A state shifted to 1971, 2086 and 2098 cm{sup -1} in the Ni-AL state. The g-values of g{sub x} = 2.30, g{sub y} = 2.23 and g{sub z} = 2.01 for the signals in the electron paramagnetic resonance (EPR) spectrum of the Ni-A state at room temperature varied for -0.009, +0.012 and +0.010, respectively, upon light irradiation. The light-induced Ni-AL state converted back immediately to the Ni-A state under dark condition at room temperature. These results show that the coordination structure of the Fe site of the Ni-A state of [NiFe] hydrogenase is perturbed significantly by light irradiation with relatively small coordination change at the Ni site.

  2. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

    2011-01-07T23:59:59.000Z

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  3. Nickel recovery from electronic waste II Electrodeposition of Ni and Ni–Fe alloys from diluted sulfate solutions

    SciTech Connect (OSTI)

    Robotin, B. [Babes-Bolyai University, Faculty of Chemistry and Chemical Engineering, 11 Arany Janos Street, RO-400028 Cluj-Napoca (Romania); Ispas, A. [Fachgebiet Elektrochemie und Galvanotechnik II, Technische Universität Ilmenau, D-98693 Ilmenau (Germany); Coman, V. [Babes-Bolyai University, Faculty of Chemistry and Chemical Engineering, 11 Arany Janos Street, RO-400028 Cluj-Napoca (Romania); Bund, A. [Fachgebiet Elektrochemie und Galvanotechnik II, Technische Universität Ilmenau, D-98693 Ilmenau (Germany); Ilea, P., E-mail: pilea@chem.ubbcluj.ro [Babes-Bolyai University, Faculty of Chemistry and Chemical Engineering, 11 Arany Janos Street, RO-400028 Cluj-Napoca (Romania)

    2013-11-15T23:59:59.000Z

    Highlights: • Ni can be recovered from EG wastes as pure Ni or as Ni–Fe alloys. • The control of the experimental conditions gives a certain alloy composition. • Unusual deposits morphology shows different nucleation mechanisms for Ni vs Fe. • The nucleation mechanism was progressive for Ni and instantaneous for Fe and Ni–Fe. - Abstract: This study focuses on the electrodeposition of Ni and Ni–Fe alloys from synthetic solutions similar to those obtained by the dissolution of electron gun (an electrical component of cathode ray tubes) waste. The influence of various parameters (pH, electrolyte composition, Ni{sup 2+}/Fe{sup 2+} ratio, current density) on the electrodeposition process was investigated. Scanning electron microscopy (SEM) and X-ray fluorescence analysis (XRFA) were used to provide information about the obtained deposits’ thickness, morphology, and elemental composition. By controlling the experimental parameters, the composition of the Ni–Fe alloys can be tailored towards specific applications. Complementarily, the differences in the nucleation mechanisms for Ni, Fe and Ni–Fe deposition from sulfate solutions have been evaluated and discussed using cyclic voltammetry and potential step chronoamperometry. The obtained results suggest a progressive nucleation mechanism for Ni, while for Fe and Ni–Fe, the obtained data points are best fitted to an instantaneous nucleation model.

  4. Electro-Refractive Low Loss MMI-Coupled Ring M.H. Kwakernaak,A.N. Lepore, H. Mohseni, H. An, Z.A. Shellenbarger,J.H. Abeles

    E-Print Network [OSTI]

    Rommel, Sean

    .C. Connolly,M. King "Low-threshold InGaAsP ring lasers fabricated using bi-level dry etching", IEEE Photon in active discs using electro-absorption[2]. We report the first demonstrationof electro

  5. Ohmic contacts to n-GaSb

    E-Print Network [OSTI]

    Yang, Zhengchong

    2012-06-07T23:59:59.000Z

    in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

  6. Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures

    SciTech Connect (OSTI)

    Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

    2014-01-13T23:59:59.000Z

    In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

  7. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

    2014-09-08T23:59:59.000Z

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  8. Structure Analysis of a Precipitate Phase in an Ni-Rich High...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Structure Analysis of a Precipitate Phase in an Ni-Rich High Temperature NiTiHf Shape Memory Alloy. Structure Analysis of a Precipitate Phase in an Ni-Rich High Temperature NiTiHf...

  9. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

    2014-04-24T23:59:59.000Z

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  10. Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2014-04-28T23:59:59.000Z

    Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

  11. Temperature-induced martensite in magnetic shape memory Fe{sub 2}MnGa observed by photoemission electron microscopy

    SciTech Connect (OSTI)

    Jenkins, Catherine; Scholl, Andreas; Kainuma, R.; Elmers, Hans-Joachim; Omori, Toshihiro

    2012-01-18T23:59:59.000Z

    The magnetic domain structure in single crystals of a Heusler shape memory compound near the composition Fe{sub 2}MnGa was observed during phase transition by photoelectron emission microscopy at Beamline 11.0.1.1 of the Advanced Light Source. The behavior is comparable with recent observations of an adaptive martensite phase in prototype Ni{sub 2}MnGa, although the pinning in the recent work is an epitaxial interface and in this work the e#11;ective pinning plane is a boundary between martensitic variants that transform in a self-accommodating way from the single crystal austenite phase present at high temperatures. Temperature dependent observations of the twinning structure give information as to the coupling behavior between the magnetism and the structural evolution.

  12. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

    2014-04-24T23:59:59.000Z

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  13. Carbon Nanotube Growth Using Ni Catalyst in Different Layouts

    E-Print Network [OSTI]

    Nguyen, H. Q.

    Vertically aligned carbon nanotubes have been grown using Ni as catalyst by plasma enhanced chemical vapor deposition system (PECVD) in various pre-patterned substrates. Ni was thermally evaporated on silicon substrates ...

  14. ag fe ni: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    conduction-band states of NiO 100 thin films grown onto Ag 100 have charac- terized NiO monocrystalline thin films has shown up both onto insulating i.e., MgO, Ref. 21 Marcon,...

  15. Good and bad features of Ni-Cd cell designs

    SciTech Connect (OSTI)

    Gross, S.

    1996-02-01T23:59:59.000Z

    Processes for spacecraft Ni-Cd cells are reviewed. Mechanical impregnation is compared against chemical and thermochemical impregnation.

  16. Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface

    E-Print Network [OSTI]

    Katsumoto, Shingo

    in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

  17. InAsGaPInGaP high-temperature power Schottky rectifier and J. M. Woodall

    E-Print Network [OSTI]

    Woodall, Jerry M.

    °C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion is thought to be due to strong covalent bonding at the InAs/GaP interface. The InAs/GaP heterointerface effectively blocks impurity diffusion. Since InGaP is superior to GaP for high-power applica- tions, as shown

  18. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  19. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23T23:59:59.000Z

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  20. High Temperature coatings based on {beta}-NiAI

    SciTech Connect (OSTI)

    Severs, Kevin

    2012-07-10T23:59:59.000Z

    High temperature alloys are reviewed, focusing on current superalloys and their coatings. The synthesis, characerization, and oxidation performance of a NiAl–TiB{sub 2} composite are explained. A novel coating process for Mo–Ni–Al alloys for improved oxidation performance is examined. The cyclic oxidation performance of coated and uncoated Mo–Ni–Al alloys is discussed.

  1. Large {beta}-Delayed Neutron Emission Probabilities in the {sup 78}Ni Region

    SciTech Connect (OSTI)

    Winger, J. A.; Ilyushkin, S. V. [Department of Physics and Astronomy, Mississippi State University, Mississippi State, Mississippi 39762 (United States); Rykaczewski, K. P.; Gross, C. J.; Shapira, D. [Physics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Batchelder, J. C. [UNIRIB, Oak Ridge Associated Universities, Oak Ridge, Tennessee 37831 (United States); Goodin, C.; Hamilton, J. H. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Grzywacz, R. [Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996 (United States); Physics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Korgul, A. [Institute of Experimental Physics, Warsaw University, Warszawa, PL 00-681 (Poland); Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996 (United States); Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States); Joint Institute for Heavy-Ion Reactions, Oak Ridge, Tennessee 37831 (United States); Krolas, W. [Institute of Nuclear Physics, Polish Academy of Sciences, Krakow, PL 31-342 (Poland); Joint Institute for Heavy-Ion Reactions, Oak Ridge, Tennessee 37831 (United States); Liddick, S. N. [UNIRIB, Oak Ridge Associated Universities, Oak Ridge, Tennessee 37831 (United States); Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996 (United States); Mazzocchi, C. [Dept. of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996 (United States); IFGA, University of Milan and INFN, Milano, I-20133 (Italy); Padgett, S.; Rajabali, M. M. [Dept. of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996 (United States); Piechaczek, A.; Zganjar, E. F. [Dept. of Physics and Astronomy, Louisiana State University, Baton Rouge, Louisiana 70803 (United States)] (and others)

    2009-04-10T23:59:59.000Z

    The {beta}-delayed neutron branching ratios (P{sub {beta}}{sub n}) for nuclei near doubly magic {sup 78}Ni have been directly measured using a new method combining high-resolution mass separation, reacceleration, and digital {beta}-{gamma} spectroscopy of {sup 238}U fission products. The P{sub {beta}}{sub n} values for the very neutron-rich isotopes {sup 76-78}Cu and {sup 83}Ga were found to be much higher than previously reported and predicted. Revised calculations of the {beta}n process, accounting for new mass measurements and an inversion of the {pi}2p{sub 3/2} and {pi}1f{sub 5/2} orbitals, are in better agreement with these new experimental results.

  2. Grain boundary compositon in NiAl

    SciTech Connect (OSTI)

    Miller, M.K.; Jayaram, R.; Camus, P.P. (Metals and Ceramics Div., Oak Ridge National Lab., Oak Ridge, TN (US))

    1992-02-15T23:59:59.000Z

    The high temperature strength and oxidation resistance of many transition metal aluminides makes these intermetallic materials attractive for high temperature applications. However, these aluminides are generally brittle at low temperatures and this restricts their technological applications. However, these aluminides are generally brittle at low temperatures and this restricts their technological applications. It has been demonstrated that the addition of more than 200 ppm of boron to the L1{sub 2}-ordered Ni{sub 3}Al changes the fracture behavior from intergranular to transgranular and increases the ductility. The B2-ordered NiAl nickel aluminide is particularly attractive because of its low density and high melting temperature. This aluminide also fractures intergranularly at room temperature. However, no improvement in ductility is observed with similar boron additions even though the intergranular fracture is suppressed and there is a significant increase in the yield strength. In this paper, the results of an atom probe field ion microscopy investigation of the compositions of the grain boundaries in undoped and boron-doped NiAl are presented. The suitability of the atom probe field ion microscopy technique for the characterization of boundaries has clearly been demonstrated in many previous investigations including the characterization of boron segregation to grain boundaries and other planar features in Ni{sub 3}Al.

  3. Electronic structure mechanism of spin-polarized electron transport in a NiC60Ni system

    E-Print Network [OSTI]

    Pandey, Ravi

    Laboratory, Weapons and Materials Research Directorate, ATTN: AMSRD-ARL-WM, Aberdeen Proving Ground, MD 21005 Abstract The nature of chemical bonding and its effect on spin-polarized electron transport in Ni­C60­Ni couple with metallic electrodes (e. g. Ni and Au), a key requirement for the Kondo effect

  4. Properties of electroless Ni-W-P amorphous alloys

    SciTech Connect (OSTI)

    Zhang Bangwei [Academia Sinica, Shenyang (China). International Centre of Materials Physics] [Academia Sinica, Shenyang (China). International Centre of Materials Physics; [Hunan Univ., Changsha (China). Dept. of Applied Physics; Hu Wangyu; Zhang Qinglong; Qu Xuanyuan [Hunan Univ., Changsha (China). Dept. of Applied Physics] [Hunan Univ., Changsha (China). Dept. of Applied Physics

    1996-08-01T23:59:59.000Z

    This paper describes work performed to determine some of the properties of the electroless Ni-W-P amorphous deposits. Phosphorus contents were varied up to 32 at.%, and the amorphous structure was found to be present at phosphorus contents above 5 at.%. Irrespective of P content, all the deposits exhibits excellent adhesion to metallic substrates. The addition of even small amounts of W provided greatly increased hardness compared with the plain Ni-P deposits. The wettability properties of the Ni-W-P deposits were found to be comparable to those of Ni-P and N-B-P deposits but inferior to those of Ni-B deposits.

  5. Microstructure of electrodeposited Cu-Ni binary alloy films

    SciTech Connect (OSTI)

    Mizushima, Io; Chikazawa, Masatoshi; Watanabe, Tohru [Tokyo Metropolitan Univ. (Japan). Dept. of Industrial Chemistry

    1996-06-01T23:59:59.000Z

    The codeposition of Cu and Ni in the electrodeposition method without a complexing agent is difficult, since the standard electrode potentials of Cu and Ni differ by approximately 600 mV. In this study, the electrodeposited Cu-Ni alloy films with various compositions were obtained using glycine as the complexing agent. Consequently, composition of the deposited Cu-Ni alloy films can be controlled by bath composition and pH, and the crystallographic structure of all the deposited Cu-Ni alloy films consists of a single solid solution and is not influenced by pH.

  6. In Situ XAS of Ni-W Hydrocracking Catalysts

    SciTech Connect (OSTI)

    Yang, N. [Argonne National Laboratory, Argonne, IL 60439 (United States); Mickelson, G. E.; Greenlay, N.; Bare, Simon R. [UOP LLC, Des Plaines, IL 60016 (United States); Kelly, S. D. [EXAFS Analysis, Bolingbrook, IL 60440 (United States)

    2007-02-02T23:59:59.000Z

    Ni-W based catalysts are very attractive in hydrotreating of heavy oil due to their high hydrogenation activity. In the present research, two catalyst samples, prepared by different methods, that exhibit significant differences in activity were sulfided in situ, and the local structure of the Ni and W were studied using X-ray absorption spectroscopy (XAS). The Ni XANES spectra were analyzed using a linear component fitting, and the EXAFS spectra of the WS2 platelets in the sulfided catalysts were modeled. The Ni and W are fully sulfided in the higher activity sample, and there are both unsulfided Ni ({approx}25%) and W (<10%) in the lower activity sample.

  7. Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires

    SciTech Connect (OSTI)

    Kauko, H.; Helvoort, A. T. J. van, E-mail: a.helvoort@ntnu.no [Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim (Norway); Fimland, B. O.; Munshi, A. M. [Department of Electronics and Telecommunications, NTNU, Trondheim (Norway); Grieb, T.; Müller, K.; Rosenauer, A. [Institut für Festkörperphysik, Universität Bremen, Bremen (Germany)

    2014-10-14T23:59:59.000Z

    The near-surface reduction of the Sb mole fraction during the growth of GaAsSb nanowires (NWs) and GaAs NWs with GaAsSb inserts has been studied using quantitative high-angle annular dark field scanning transmission electron microscopy (STEM). A model for diffusion of Sb in the hexagonal NWs was developed and employed in combination with the quantitative STEM analysis. GaAsSb NWs grown by Ga-assisted molecular beam epitaxy (MBE) and GaAs/GaAsSb NWs grown by Ga- and Au-assisted MBE were investigated. At the high temperatures employed in the NW growth, As-Sb exchange at and outward diffusion of Sb towards the surface take place, resulting in reduction of the Sb concentration at and near the surface in the GaAsSb NWs and the GaAsSb inserts. In GaAsSb NWs, an increasing near-surface depletion of Sb was observed towards the bottom of the NW due to longer exposure to the As beam flux. In GaAsSb inserts, an increasing change in the Sb concentration profile was observed with increasing post-insert axial GaAs growth time, resulting from a combined effect of radial GaAs overgrowth and diffusion of Sb. The effect of growth temperature on the diffusion of Sb in the GaAsSb inserts was identified. The consequences of these findings for growth optimization and the optoelectronic properties of GaAsSb are discussed.

  8. Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template

    SciTech Connect (OSTI)

    Wang, Y.D.; Zang, K.Y.; Chua, S.J.; Tripathy, S.; Chen, P.; Fonstad, C.G. [Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2005-12-19T23:59:59.000Z

    We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110 nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

  9. REGULAR PAPER Improvement of Surge Protection by Using an AlGaN/GaN-Based

    E-Print Network [OSTI]

    Chow, Lee

    the metal oxide varistor (MOV) and resistor (R) in a state-of-the-art surge protection circuit), metal oxide varistor (MOV), and transient voltage suppressor (TVS) diodes are the state-of-the- artREGULAR PAPER Improvement of Surge Protection by Using an AlGaN/GaN-Based Metal­Semiconductor­Metal

  10. Ni-Pt Silicide Formation Through Ti Mediating Layers

    SciTech Connect (OSTI)

    Besser,P.; Lavoie, C.; Ozcan, A.; Murray, C.; Strane, J.; Wong, K.; Gribelyuk, M.; Wang, Y.; Parks, C.; Jordan-Sweet, J.

    2007-01-01T23:59:59.000Z

    With Ni1-xPtxSi, the variation in queue time between the final surface cleaning and Ni-Pt deposition represents a significant manufacturability issue. A short queue time is often difficult to maintain, leading to the formation of an oxide layer on the Si substrate prior to Ni-Pt deposition that can affect the formation of Ni1-xPtxSi and its texture. In this manuscript, it will be shown that an extended queue time prior to Ni-Pt deposition leads to morphological changes in the Ni1-xPtxSi formation sequence. A layer of Ti deposited between Ni-Pt and Si reduces the native oxide and may facilitate Ni1-xPtxSi formation. With increasing Ti thickness, the presence of metal-rich phases is gradually reduced and the formation temperature of Ni1-xPtxSi increases, suggesting a direct formation of Ni1-xPtxSi from Ni-Pt. In the presence of an interfacial oxide, an increase in formation temperature is also observed with increasing Ti interlayer thickness. When the Ti layer is sufficiently thick, the phase formation sequence becomes relatively insensitive to the presence of an interfacial oxide or extended queue time.

  11. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

    1997-05-01T23:59:59.000Z

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  12. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21T23:59:59.000Z

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(×2.1±1) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  13. Study and development of tunable, single mode AlGaAs/GaAs lasers

    SciTech Connect (OSTI)

    Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

    1990-09-01T23:59:59.000Z

    Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

  14. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02T23:59:59.000Z

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  15. In situ NiTi/Nb(Ti) composite

    SciTech Connect (OSTI)

    Jiang, Daqiang, E-mail: dq80jiang@126.com; Cui, Lishan; Jiang, Jiang; Zheng, Yanjun

    2013-12-15T23:59:59.000Z

    Graphical abstract: - Highlights: • In situ NiTi/Nb(Ti) composites were fabricated. • The transformation temperature was affected by the mixing Ti:Ni atomic ratios. • The NiTi component became micron-scale lamella after forging and rolling. • The composite exhibited high strength and high damping capacity. - Abstract: This paper reports on the creation of a series of in situ NiTi/Nb(Ti) composites with controllable transformation temperatures based on the pseudo-binary hypereutectic transformation of NiTi–Nb system. The composite constituent morphology was controlled by forging and rolling. It is found that the thickness of the NiTi lamella in the composite reached micron level after the hot-forging and cold-rolling. The NiTi/Nb(Ti) composite exhibited high damping capacity as well as high yield strength.

  16. Quantum confinement in GaP nanoclusters

    SciTech Connect (OSTI)

    Laurich, B.K.; Smith, D.C.; Healy, M.D.

    1994-06-01T23:59:59.000Z

    We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.

  17. Stripe-to-bubble transition of magnetic domains at the spin reorientation of (Fe/Ni)/Cu/Ni/Cu(001)

    SciTech Connect (OSTI)

    Wu, J.; Choi, J.; Won, C.; Wu, Y. Z.; Scholl, A.; Doran, A.; Hwang, Chanyong; Qiu, Z.

    2010-06-09T23:59:59.000Z

    Magnetic domain evolution at the spin reorientation transition (SRT) of (Fe/Ni)/Cu/Ni/Cu(001) is investigated using photoemission electron microscopy. While the (Fe/Ni) layer exhibits the SRT, the interlayer coupling of the perpendicularly magnetized Ni layer to the (Fe/Ni) layer serves as a virtual perpendicular magnetic field exerted on the (Fe/Ni) layer. We find that the perpendicular virtual magnetic field breaks the up-down symmetry of the (Fe/Ni) stripe domains to induce a net magnetization in the normal direction of the film. Moreover, as the virtual magnetic field increases to exceed a critical field, the stripe domain phase evolves into a bubble domain phase. Although the critical field depends on the Fe film thickness, we show that the area fraction of the minority domain exhibits a universal value that determines the stripe-to-bubble phase transition.

  18. atis vallis rihards: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    po antjoko . Gradivo za nare?ni slovar severozahodnoprlekega govora University of Kansas - KU ScholarWorks Summary: .: mastjk m mast??a?k -a 1. izdelovalec (jedilnega)...

  19. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01T23:59:59.000Z

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

  20. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01T23:59:59.000Z

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  1. Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers

    SciTech Connect (OSTI)

    Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

    2013-05-28T23:59:59.000Z

    Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

  2. Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

    SciTech Connect (OSTI)

    Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France)] [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)] [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Física, Universidade Federal do Ceará, P.O. Box 6030, Fortaleza–CE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain)] [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Goñi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)] [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)

    2014-01-06T23:59:59.000Z

    The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

  3. Nucleation and Growth of GaN on GaAs (001) Substrates

    SciTech Connect (OSTI)

    Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

    1999-05-03T23:59:59.000Z

    The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

  4. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States); Yarrison-Rice, Jan [Department of Physics, Miami University, Oxford, OH 45056 (United States); Gao, Qiang; Tan, Hoe; Jagadish, Chennupati [Department of Electronic Materials and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Etheridge, Joanne [Monash Centre for Electron Microscopy, Monash University, Victoria, 3800 (Australia); Wong, Bryan M. [Materials Chemistry Department, Sandia National Laboratories, Livermore, CA 94551 (United States)

    2013-12-04T23:59:59.000Z

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  5. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgül Okur [Department of Statistics, Giresun University, Giresun (Turkey); Akdemir, Hande Günay; ??can, ?mdat [Department of Mathematics, Giresun University, Giresun (Turkey)

    2014-08-20T23:59:59.000Z

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  6. Accurate characterization and improvement of GaAs microstrip attenuation

    E-Print Network [OSTI]

    Carroll, James Mason

    2012-06-07T23:59:59.000Z

    Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

  7. NiW and NiRu Bimetallic Catalysts for Ethylene Steam Reforming: Alternative Mechanisms for Sulfur Resistance

    SciTech Connect (OSTI)

    Rangan, M.; Yung, M. M.; Medlin, J. W.

    2012-06-01T23:59:59.000Z

    Previous investigations of Ni-based catalysts for the steam reforming of hydrocarbons have indicated that the addition of a second metal can reduce the effects of sulfur poisoning. Two systems that have previously shown promise for such applications, NiW and NiRu, are considered here for the steam reforming of ethylene, a key component of biomass derived tars. Monometallic and bimetallic Al{sub 2}O{sub 3}-supported Ni and W catalysts were employed for ethylene steam reforming in the presence and absence of sulfur. The NiW catalysts were less active than Ni in the absence of sulfur, but were more active in the presence of 50 ppm H{sub 2}S. The mechanism for the W-induced improvements in sulfur resistance appears to be different from that for Ru in NiRu. To probe reasons for the sulfur resistance of NiRu, the adsorption of S and C{sub 2}H{sub 4} on several bimetallic NiRu alloy surfaces ranging from 11 to 33 % Ru was studied using density functional theory (DFT). The DFT studies reveal that sulfur adsorption is generally favored on hollow sites containing Ru. Ethylene preferentially adsorbs atop the Ru atom in all the NiRu (111) alloys investigated. By comparing trends across the various bimetallic models considered, sulfur adsorption was observed to be correlated with the density of occupied states near the Fermi level while C{sub 2}H{sub 4} adsorption was correlated with the number of unoccupied states in the d-band. The diverging mechanisms for S and C{sub 2}H{sub 4} adsorption allow for bimetallic surfaces such as NiRu that enhance ethylene binding without accompanying increases in sulfur binding energy. In contrast, bimetallics such as NiSn and NiW appear to decrease the affinity of the surface for both the reagent and the poison.

  8. Height stabilization of GaSb/GaAs quantum dots by Al-rich capping

    SciTech Connect (OSTI)

    Smakman, E. P., E-mail: e.p.smakman@tue.nl; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven (Netherlands); DeJarld, M.; Martin, A. J.; Millunchick, J. [Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Luengo-Kovac, M.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2014-09-01T23:59:59.000Z

    GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.

  9. Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

    SciTech Connect (OSTI)

    Perez-Tomas, A.; Fontsere, A.; Llobet, J. [IMB-CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, CAT (Spain); Placidi, M. [IREC, Jardins Dones de Negre 1, 08930 Sant Adria de Besos, Barcelona (Spain); Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Baron, N. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); PICOGIGA International, Pl M. Rebuffat, Courtaboeuf 7, 91140 Villejust (France)

    2013-05-07T23:59:59.000Z

    The vertical bulk (drain-bulk) current (I{sub db}) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I{sub db} (25-300 Degree-Sign C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E{sub a}), the (soft or destructive) vertical breakdown voltage (V{sub B}), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E{sub a} = 0.35 eV at T = 25-300 Degree-Sign C; V{sub B} = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E{sub a} = 2.5 eV at T > 265 Degree-Sign C; V{sub B} > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E{sub a} = 0.35 eV at T > 150 Degree-Sign C; V{sub B} = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

  10. Multiband GaNAsP Quaternary Alloys

    SciTech Connect (OSTI)

    Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

    2005-12-08T23:59:59.000Z

    We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

  11. A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+

    E-Print Network [OSTI]

    McKittrick, Joanna

    A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

  12. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

    2014-09-26T23:59:59.000Z

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  13. Recent progress in InGaAsSb/GaSb TPV devices

    SciTech Connect (OSTI)

    Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

    1996-05-01T23:59:59.000Z

    AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

  14. Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

    SciTech Connect (OSTI)

    MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

    2014-01-06T23:59:59.000Z

    Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

  15. Fusion of radioactive $^{132}$Sn with $^{64}$Ni

    E-Print Network [OSTI]

    J. F. Liang; D. Shapira; J. R. Beene; C. J. Gross; R. L. Varner; A. Galindo-Uribarri; J. Gomez del Campo; P. A. Hausladen; P. E. Mueller; D. W. Stracener; H. Amro; J. J. Kolata; J. D. Bierman; A. L. Caraley; K. L. Jones; Y. Larochelle; W. Loveland; D. Peterson

    2007-04-05T23:59:59.000Z

    Evaporation residue and fission cross sections of radioactive $^{132}$Sn on $^{64}$Ni were measured near the Coulomb barrier. A large sub-barrier fusion enhancement was observed. Coupled-channel calculations including inelastic excitation of the projectile and target, and neutron transfer are in good agreement with the measured fusion excitation function. When the change in nuclear size and shift in barrier height are accounted for, there is no extra fusion enhancement in $^{132}$Sn+$^{64}$Ni with respect to stable Sn+$^{64}$Ni. A systematic comparison of evaporation residue cross sections for the fusion of even $^{112-124}$Sn and $^{132}$Sn with $^{64}$Ni is presented.

  16. Proton inelastic scattering on {sup 56}Ni in inverse kinematics

    SciTech Connect (OSTI)

    Kraus, G.; Egelhof, P.; Fischer, C.; Geissel, H.; Himmler, A.; Nickel, F.; Muenzenberg, G.; Schwab, W.; Weiss, A. [GSI, Darmstadt (Germany); Chulkov, L.; Golovkov, M.; Ogloblin, A. [I.V. Kurchatov Inst., Moscow (Russian Federation); Friese, J.; Gillitzer, A.; Koerner, H.J.; Peter, M. [TU, Munich (Germany); Henning, W.; Schiffer, J.P. [Argonne National Lab., IL (United States); Kratz, J.V. [Univ. of Mainz (Germany)

    1993-10-01T23:59:59.000Z

    Inelastic proton scattering to the first excited 2{sup +} state at 2.701 MeV in doubly magic {sup 56}Ni was studied at 101 MeV/u in inverse kinematics. The radioactive {sup 56}Ni ion beam was obtained from the SIS heavy ion synchrotron at GSI Darmstadt via fragmentation of a {sup 58}Ni beam, and separation by the fragment separator (FRS). A value B(E2, 0{sup +} {yields} 2{sup +}) = 600 {+-} 120 e{sup 2} fm{sup 4} was obtained which corresponds to a deformation parameter {beta} ({sup 56}Ni) = 0.173 {+-} 0.017.

  17. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01T23:59:59.000Z

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  18. Point defect balance in epitaxial GaSb

    SciTech Connect (OSTI)

    Segercrantz, N., E-mail: natalie.segercrantz@aalto.fi; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FIN-00076 Aalto Espoo (Finland); Song, Y.; Wang, S. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Göteborg (Sweden); State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 865 Changning Road, Shanghai 200050 (China)

    2014-08-25T23:59:59.000Z

    Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

  19. Wide magnetic field range of Ni-P/PZT/Ni-P cylindrical layered magnetoelectric composites

    E-Print Network [OSTI]

    Volinsky, Alex A.

    magnetoelectric (ME) composites were prepared by electroless deposition. The Ni-P layer has an amorphous with epoxy,5 electrodeposition,6,7 and electroless deposition.8,9 The objective and the develop- ment trend films with good interfacial bonding.12 Nickel is a kind of conventional magnetic material suitable

  20. SF 6432-NI (04-95)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar HomePromisingStoriesSANDIA REPORT SANDSDN forAA7/31/136432-NI

  1. Airtricity Developments NI Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORT Americium/Curium Vitrification ProjectAVANTIAirey Jump to:NI Ltd Jump

  2. Institut Jozef Stefan Odsek za reaktorsko tehniko

    E-Print Network [OSTI]

    Â?umer, Slobodan

    the cores. Japan: 54 (+ 2 - 4 - X) nuc. power plants 48 GW electric (~27 %) (before quake: plans-6 m fuel assembly h=4m source: General Electric #12;Containment: volume ~10000 m3 filled with N2 the reactors. Fukushima Daiichi - RHRs powered by diesel generators cool the cores. Fukushima Daini, Onagawa

  3. Univerza v Ljubljani Fakulteta za elektrotehniko

    E-Print Network [OSTI]

    Ljubljana, University of

    to EMF generated by domestic induction cookers Phys Med Biol 56 6149­60 Paper 3: Kos B, Valic B, Kotnik

  4. Morphology and composition of Ni-Co electrodeposited powders

    SciTech Connect (OSTI)

    Maksimovic, V.M., E-mail: vesnam@vinca.rs [Institute of Nuclear Sciences, 'Vinca', University of Belgrade, 11001 Belgrade, P. O. Box 522 (Serbia); Lacnjevac, U.C. [Institute for Multidisciplinary research, University of Belgrade, P.O. Box 33, 11030 Belgrade (Serbia); Stoiljkovic, M.M. [Institute of Nuclear Sciences, 'Vinca', University of Belgrade, 11001 Belgrade, P. O. Box 522 (Serbia); Pavlovic, M.G. [Institute of Electrochemistry, ICTM, University of Belgrade, 11000 Belgrade, Njegoseva 12 (Serbia); Jovic, V.D. [Institute for Multidisciplinary research, University of Belgrade, P.O. Box 33, 11030 Belgrade (Serbia)

    2011-12-15T23:59:59.000Z

    The morphology, phase and chemical composition of Ni-Co alloy powders electrodeposited from an ammonium sulfate-boric acid containing electrolyte with different ratio of Ni/Co ions were investigated. The ratios of Ni/Co ions were 1/1, 1/2 and 1/3. The morphology, chemical composition and phase composition of the electrodeposited alloy powders were investigated using AES, SEM, EDS and XRD analysis. Composition of the electrolyte, i.e. the ratio of Ni/Co concentrations was found to influence both, the alloy phase composition and the morphology of Ni-Co alloy powders. At the highest ratio of Ni/Co = 1/1 concentrations typical 2D fern-like dendritic particles were obtained. With a decrease of Ni/Co ions ratio among 2D fern-like dendrites, 3D dendrites and different agglomerates were obtained. X-ray diffraction studies showed that the alloy powders mainly consisted of the face-centered cubic {alpha}-nickel phase and hexagonal close-packed {epsilon}-cobalt phase and minor proportions of face-centered cubic {alpha}-cobalt phase. The occurrence of the latter phase was observed only in the alloy powder with the higher cobalt concentration in electrolyte. The electrodeposition of Ni-Co powders occurred in an anomalous manner. - Highlights: Black-Right-Pointing-Pointer Ni-Co alloys powders were successfully electrodeposited. Black-Right-Pointing-Pointer Composition of the electrolyte (Ni/Co ions ratio) was found to influence on morphology of powders. Black-Right-Pointing-Pointer The electrodeposition of Ni-Co powders occurred in an anomalous manner.

  5. ag ni zn-addition: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Summary: Recent research shows that the resistance switching characteristics of NiO thin film, in combinations conversion into NiSi using Ni-AMD, and discuss the chemistry of...

  6. Ni(II) Salts and 2-Propanol Effect Catalytic Reductive Coupling of Epoxides and Alkynes

    E-Print Network [OSTI]

    Beaver, Matthew G.

    A Ni-catalyzed reductive coupling of alkynes and epoxides using Ni(II) salts and simple alcohol reducing agents is described. Whereas previously reported conditions relied on Ni(cod)2 and Et3B, this system has several ...

  7. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12T23:59:59.000Z

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  8. Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction

    SciTech Connect (OSTI)

    Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

    2014-03-17T23:59:59.000Z

    Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16° from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

  9. Effect of Pd on the Ni{sub 2}Si stress relaxation during the Ni-silicide formation at low temperature

    SciTech Connect (OSTI)

    Putero, M.; Mangelinck, D. [Aix-Marseille Univ., IM2NP, Faculte des Sciences de Jerome, F-13397 Marseille (France); CNRS, IM2NP-UMR 7334, Faculte des Sciences de Jerome, F-13397 Marseille (France)

    2012-09-10T23:59:59.000Z

    The thermally induced solid-state reaction between a 50-nm-thick Ni(6%Pd) layer and a Si(100) substrate was investigated using in situ and simultaneous x-ray diffraction and sheet resistance. The reaction begins with the growth of the stressed {delta}-Ni{sub 2}Si phase, and the transient {theta}-Ni{sub 2}Si. At the end of the {theta}-Ni{sub 2}Si consumption, a NiSi seed is formed. Then, the {delta}-Ni{sub 2}Si relaxation occurs simultaneously with its subsequent growth and the Pd out diffusion from the unreacted Ni(Pd) layer. It is suggested that the driving force for the Pd diffusion out of the metal layer is linked to both the higher solubility of Pd in NiSi compared to Ni{sub 2}Si and to the Ni{sub 2}Si relaxation.

  10. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure

    SciTech Connect (OSTI)

    Barbosa, B. G.; Arakaki, H.; Souza, C. A. de; Pusep, Yu. A. [Instituto de Fisica de São Carlos, Universidade de São Paulo, 13560-970 Sao Carlos, SP (Brazil)

    2014-03-21T23:59:59.000Z

    Photoluminescence was studied in GaAs/AlGaAs nanowires (NWs) with different radial heterostructures. We demonstrated that manipulation of the emission energy may be achieved by appropriate choice of the shell structure. The emission at highest energy is generated in the NWs with tunneling thin AlGaAs inner shell and thin GaAs outer shell due to recombination of the photoexcited electrons confined in the outer shell with the holes in the core. Lower energy emission was shown to occur in the NWs with thick outer shell grown in the form of a short-period GaAs/AlGaAs multiple quantum well structure. In this case, the tunneling probability through the multiple quantum wells controls the energy emitted by the NWs. The doping of core results in dominated low energy emission from the GaAs core.

  11. Lanthanide Al-Ni base Ericsson cycle magnetic refrigerants

    DOE Patents [OSTI]

    Gschneidner, K.A. Jr.; Takeya, Hiroyuki

    1995-10-31T23:59:59.000Z

    A magnetic refrigerant for a magnetic refrigerator using the Ericsson thermodynamic cycle comprises DyAlNi and (Gd{sub 0.54}Er{sub 0.46})AlNi alloys having a relatively constant {Delta}Tmc over a wide temperature range. 16 figs.

  12. ''Bare'' single-particle energies in Ni-56

    E-Print Network [OSTI]

    Trache, L.; Kolomiets, A.; Shlomo, S.; Heyde, K.; Dejbakhsh, H.; Gagliardi, Carl A.; Tribble, Robert E.; Zhou, XG; Jacob, VE; Oros, AM.

    1996-01-01T23:59:59.000Z

    The structure of the low-lying levels in the mirror nuclei Ni-57 and Cu-57 is described within the extended unified model. The problem of single-particle energies in Ni-56 is treated in detail. ''Bare'' single-particle energies are extracted from...

  13. Lanthanide Al-Ni base Ericsson cycle magnetic refrigerants

    DOE Patents [OSTI]

    Gschneidner, Jr., Karl A. (Ames, IA); Takeya, Hiroyuki (Ibaraki, JP)

    1995-10-31T23:59:59.000Z

    A magnetic refrigerant for a magnetic refrigerator using the Ericsson thermodynamic cycle comprises DyAlNi and (Gd.sub.0.54 Er.sub.0.46)AlNi alloys having a relatively constant .DELTA.Tmc over a wide temperature range.

  14. E-Print Network 3.0 - al-ni-co decagonal quasicrystal Sample...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Summary: of decagonal Al-Ni-Co K. Pussi Department of Electrical Engineering, Lappeenranta University of Technology, P... . EARLIER WORK ON d-Al-Ni-Co STRUCTURES Decagonal...

  15. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01T23:59:59.000Z

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  16. Formation of a Novel Ordered Ni3Al Surface Structure by Codeposition on NiAl(110)

    E-Print Network [OSTI]

    Han, Yong

    The formation of a new type of ordered 2D Ni3Al overlayer by low-temperature codeposition on NiAl(110) is demonstrated by kinetic Monte Carlo simulation of a multisite atomistic lattice-gas model with a precise treatment ...

  17. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Carrington, P. J.; Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

    2014-01-07T23:59:59.000Z

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  18. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

    2014-02-03T23:59:59.000Z

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  19. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-05-26T23:59:59.000Z

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  20. Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates

    E-Print Network [OSTI]

    Nabben, Reinhard

    .e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

  1. Preparation of Ni-Sn alloys by an electroless-deposition method

    SciTech Connect (OSTI)

    Shimauchi, Hidenori; Ozawa, Susumu; Tamura, Keiu; Osaka, Tetsuya (Waseda Univ., Tokyo (Japan). Dept. of Applied Chemistry)

    1994-06-01T23:59:59.000Z

    Ni-Sn alloy is expected for as a functional material, because of its excellent corrosion resistance, wear resistance, and solderability. Electroless-deposited Ni-Sn alloy films were investigated to increase tin content in the deposit. The maximum tin contents of electroless Ni-Sn-P and Ni-Sn-B were ca. 30 atom percent (a/o) and 42 a/o, respectively. The maximum tin contents in the case of Ni-Sn-B was nearly equal to that of electrodeposited Ni-Sn alloy already reported. The crystallinity of Ni-Sn-P and Ni-Sn-B alloys was raised up with an increase in tin content. The corrosion resistance of Ni-Sn-P and Ni-Sn-B alloys was between that of amorphous and crystalline electroless-deposited Ni-P. Codeposition of tin into Ni-P films improved solderability, but into the Ni-B films, the solderability of Ni-Sn-B films situated in the region between those of Ni-P and NiB, because the solderability of NiB is higher.

  2. Development of Co-Ni-Ga Ferromagnetic Shape Memory Alloys (FSMAs) by Investigating the Effects of Solidification Processing Parameters

    E-Print Network [OSTI]

    Kalaantari, Haamun

    2013-01-01T23:59:59.000Z

    10 Fig. 6. Coil-spring example illustrating the differencesgiven in Fig. 6. Fig. 6. Coil-spring example illustrating

  3. GaAs single quantum dot embedded into AlGaAs nanowire

    SciTech Connect (OSTI)

    Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Néel, 17 rue des Martyrs, F-38054 Grenoble (France)

    2013-12-04T23:59:59.000Z

    We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

  4. Wavelength limits for InGaN quantum wells on GaN

    SciTech Connect (OSTI)

    Pristovsek, Markus, E-mail: markus@pristovsek.de [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)] [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)

    2013-06-17T23:59:59.000Z

    The emission wavelength of coherently strained InGaN quantum wells (QW) is limited by the maximum thickness before relaxation starts. For high indium contents x>40% the resulting wavelength decreases because quantum confinement dominates. For low indium content x<40% the electron hole wave function overlap (and hence radiative emission) is strongly reduced with increasing QW thickness due to the quantum confined Stark effect and imposes another limit. This results in a maximum usable emission wavelength at around 600?nm for QWs with 40%-50% indium content. Relaxed InGaN buffer layers could help to push this further, especially on non- and semi-polar orientations.

  5. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. (USDOE Idaho Field Office, Idaho Falls, ID (United States)); Koploy, M.A. (General Atomics, San Diego, CA (United States))

    1992-01-01T23:59:59.000Z

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  6. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. [USDOE Idaho Field Office, Idaho Falls, ID (United States); Koploy, M.A. [General Atomics, San Diego, CA (United States)

    1992-08-01T23:59:59.000Z

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  7. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12T23:59:59.000Z

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  8. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074, Würzburg (Germany); Igusa, R.; Iwamoto, S.; Arakawa, Y. [University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

    2014-09-15T23:59:59.000Z

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  9. AlGaAs/GaAs quantum well infrared detectors and modulators

    E-Print Network [OSTI]

    Dave, Digant Praful

    1990-01-01T23:59:59.000Z

    to the quantum well. This optical transition wavelength lies in the mid infrared region of the spectrum. To get a more realistic picture of the optical transition in a 1-D quantum well, the non-parabolicity of the conduction band of GaAs is taken... into consideration. Further it is seen that with the change in temperature and doping concentration the width and peak of the absorption curve also changes. Based on the above calculations and results an AIGaAs/GaAs quantum well infrared photodetector...

  10. Reaction synthesis of Ni-Al based particle composite coatings

    SciTech Connect (OSTI)

    SUSAN,DONALD F.; MISIOLEK,WOICECK Z.; MARDER,ARNOLD R.

    2000-02-11T23:59:59.000Z

    Electrodeposited metal matrix/metal particle composite (EMMC) coatings were produced with a nickel matrix and aluminum particles. By optimizing the process parameters, coatings were deposited with 20 volume percent aluminum particles. Coating morphology and composition were characterized using light optical microscopy (LOM), scanning electron microscopy (SEM), and electron probe microanalysis (EPMA). Differential thermal analysis (DTA) was employed to study reactive phase formation. The effect of heat treatment on coating phase formation was studied in the temperature range 415 to 1,000 C. Long-time exposure at low temperature results in the formation of several intermetallic phases at the Ni matrix/Al particle interfaces and concentrically around the original Al particles. Upon heating to the 500--600 C range, the aluminum particles react with the nickel matrix to form NiAl islands within the Ni matrix. When exposed to higher temperatures (600--1,000 C), diffusional reaction between NiAl and nickel produces ({gamma})Ni{sub 3}Al. The final equilibrium microstructure consists of blocks of ({gamma}{prime})Ni{sub 3}Al in a {gamma}(Ni) solid solution matrix, with small pores also present. Pore formation is explained based on local density changes during intermetallic phase formation and microstructural development is discussed with reference to reaction synthesis of bulk nickel aluminides.

  11. Radiation Hard AlGaN Detectors and Imager

    SciTech Connect (OSTI)

    None

    2012-05-01T23:59:59.000Z

    Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

  12. On the road to doubly-magic {sup 48}Ni

    SciTech Connect (OSTI)

    Blank, B.; Czajkowski, S.; Davi, F.; Del Moral, R.; Dufour, J. P.; Fleury, A.; Marchand, C.; Pravikoff, M. S. [Centre d'Etudes Nucleaires de Bordeaux-Gradignan, F-33175 Gradignan Cedex (France); Benlliure, J.; Boue, F.; Collatz, R.; Heinz, A.; Hellstroem, M.; Hu, Z.; Roeckl, E.; Shibata, M.; Suemmerer, K. [Gesellschaft fuer Schwerionenforschung, Planckstr. 1, D-64291 Darmstadt (Germany); Lewitowicz, M. [Grand Accelerateur National des Ions Lourds, B.P. 5027, F-14021 Caen Cedex (France); Janas, Z.; Karny, M. [Institute of Experimental Physics, University of Warsaw, PL-00-681 Warsaw, Hoza 69 (Poland)] (and others)

    1998-12-21T23:59:59.000Z

    A relativistic primary beam of {sup 58}Ni from the SIS synchrotron at GSI was used to produce proton-rich isotopes in the titanium-to-nickel region by projectile fragmention at the FRS. We report here on the first observation of the T{sub z}=-7/2 nuclei {sup 45}Fe and {sup 49}Ni. In addition, the new isotope {sup 42}Cr (T{sub z}=-3) was identified. This opens the route to the yet unobserved doubly-magic nucleus {sup 48}Ni.

  13. Graphene Monolayer Rotation on Ni(111) Facilities Bilayer Graphene Growth

    SciTech Connect (OSTI)

    Batzill M.; Sutter P.; Dahal, A.; Addou, R.

    2012-06-11T23:59:59.000Z

    Synthesis of bilayer graphene by chemical vapor deposition is of importance for graphene-based field effect devices. Here, we demonstrate that bilayer graphene preferentially grows by carbon-segregation under graphene sheets that are rotated relative to a Ni(111) substrate. Rotated graphene monolayer films can be synthesized at growth temperatures above 650 C on a Ni(111) thin-film. The segregated second graphene layer is in registry with the Ni(111) substrate and this suppresses further C-segregation, effectively self-limiting graphene formation to two layers.

  14. Application of cluster-plus-glue-atom model to barrierless Cu–Ni–Ti and Cu–Ni–Ta films

    SciTech Connect (OSTI)

    Li, Xiaona, E-mail: lixiaona@dlut.edu.cn; Ding, Jianxin; Wang, Miao; Dong, Chuang [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024 (China); Chu, Jinn P. [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China)

    2014-11-01T23:59:59.000Z

    To improve the thermal stability of copper and avoid its diffusion into surrounding dielectrics or interfacial reactions with them, the authors applied the cluster-plus-glue-atom model to investigate barrierless Cu–Ni–M (M?=?Ti or Ta) seed layers. The dissolution of the third element (Ti or Ta) in the Cu lattice with the aid of Ni significantly improved the thermal stability of the Cu seed layer. The appropriate M/Ni (M?=?Ti or Ta) ratio was selected to obtain a low resistivity: the resistivity was as low as 2.5??? cm for the (Ti{sub 1.5/13.5}Ni{sub 12/13.5}){sub 0.3}Cu{sub 99.7} film and 2.8??? cm for the (Ta{sub 1.1/13.1}Ni{sub 12/13.1}){sub 0.4}Cu{sub 99.6} film after annealing at 500?°C for 1?h. After annealing at 500?°C for 40?h, the two films remained stable without forming a Cu{sub 3}Si compound. The authors confirmed that the range of applications of the cluster-plus-glue-atom model could be extended. Therefore, a third element M with negative enthalpies of mixing with both Cu and Ni could be selected, under the premise that the mixing enthalpy of M–Ni is more negative than that of M–Cu.

  15. Measurement of the transmission magnetic circular dichroism of Ga{sub 1?x}Mn{sub x}As epilayers using a built-in p-i-n photodiode

    SciTech Connect (OSTI)

    He, Z. X.; Zheng, H. Z., E-mail: hzzheng@red.semi.ac.cn; Wang, H. L.; Zhao, J. H. [State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083 (China)

    2014-02-28T23:59:59.000Z

    By constructing a GaMnAs epilayer/semi-insulating In{sub 0.2}Ga{sub 0.8}As/(001) n{sup +}-GaAs substrate layer structure as a built-in p-i-n photodiode, we developed a scheme for on-chip measurements of transmission magnetic circular dichroism (T-MCD). Both the hysteresis loops in the magnetic field sweeps and the wavelength scans at saturated magnetic fields measured using the new T-MCD scheme, illustrated the same features as those previously measured on the freestanding GaMnAs thin films by conventional T-MCD. Because a large group of epitaxially grown magnetic film/semiconductor heterostructures, such as Fe, NiFe, CoFeAl, and MnGa films on semiconductor substrates, are becoming important new building blocks for semiconductor-based spin field-effect transistor, perpendicular magnetic tunnel junction (p-MTJ) and lateral MTJ devices, the new T-MCD scheme can be applied to tests of their magnetic properties by forming either p-i-n or Schottky photodiodes.

  16. Perpendicular magnetic anisotropy in ion beam sputtered Co/Ni multilayers

    E-Print Network [OSTI]

    Rasin, Boris

    2009-01-01T23:59:59.000Z

    Co/Ni multilayers display perpendicular magnetic anisotropy and have applications in magnetic devices that could lead to a large increase in the density of magnetic storage. Co/Ni 10-(2 Å Co/ 8Å Ni) and 10-(2 Å Co/ 4 Å Ni) ...

  17. Middle distillate hydrotreatment zeolite catalysts containing Pt/Pd or Ni

    E-Print Network [OSTI]

    Marin-Rosas, Celia

    2009-05-15T23:59:59.000Z

    A study on middle distillate hydrotreatment zeolite catalysts containing Pt/Pd and/or Ni was performed. The effect of the addition of the corresponding CoMo, CoMoPd, CoMoPtPd and CoMoNi in PdNiPt-zeolite, Pt-zeolite, Ni-zeolite, and Pd...

  18. TiNi shape memory alloy thin films for microactuator application

    E-Print Network [OSTI]

    Fu, Yongqing

    TiNi films were prepared by co-sputtering TiNi target and a separate Ti target. Crystalline structure and phase transformation behaviors of TiNi films were investigated. Results showed that TiNi films had fine grain size ...

  19. Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique

    SciTech Connect (OSTI)

    Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

    2014-05-15T23:59:59.000Z

    GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

  20. GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices

    E-Print Network [OSTI]

    Tsai, Chia-Ho

    2006-01-01T23:59:59.000Z

    after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

  1. O?[]O? nuclear ?-decay of ?²Ga

    E-Print Network [OSTI]

    Hyman, Bruce Carl

    1999-01-01T23:59:59.000Z

    information, MARS was focused such that only fully stripped N=Z ions were passed, with the vast majority of them being Ga. The second phase of the experiment was a I3-y coincidence experiment. At the back-end of MARS, a 1" x 1 '!4" x 3" four..., using the Weinberg-Salam model of electroweak interactions, to be [23]: A& ? d, ?= ? [41n(mz/m )+ln(m /m?)+2K+A +" ]. (16) Here mz is the mass of the Z boson, me the proton mass, mx is the low energy cutoff for the second and third terms that arise...

  2. General Atomics (GA) | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert Southwest Region service area. TheEPSCIResearch to sponsorGeneral Atomics (GA)

  3. GA SNC Solar | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpen EnergyBoard" form. To create aGA SNC Solar Jump to:

  4. Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells

    SciTech Connect (OSTI)

    Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

    2014-01-21T23:59:59.000Z

    In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

  5. $^{64}$Ni+$^{64}$Ni fusion reaction calculated with the density-constrained time-dependent Hartree-Fock formalism

    E-Print Network [OSTI]

    A. S. Umar; V. E. Oberacker

    2007-09-25T23:59:59.000Z

    We study fusion reactions of the $^{64}$Ni+$^{64}$Ni system using the density-constrained time-dependent Hartree-Fock (TDHF) formalism. In this formalism the fusion barriers are directly obtained from TDHF dynamics. In addition, we incorporate the entrance channel alignments of the slightly deformed (oblate) $^{64}$Ni nuclei due to dynamical Coulomb excitation. We show that alignment leads to a fusion barrier distribution and alters the naive picture for defining which energies are actually sub-barrier. We also show that core polarization effects could play a significant role in fusion cross section calculations.

  6. Ni(NiO)/single-walled carbon nanotubes composite: Synthesis of electro-deposition, gas sensing property for NO gas and density functional theory calculation

    SciTech Connect (OSTI)

    Li, Li; Zhang, Guo; Chen, Lei [Key Laboratory of Chemical Engineering Process and Technology for High-efficiency Conversion, College of Heilongjiang Province, Heilongjiang University, Harbin 150080 (China)] [Key Laboratory of Chemical Engineering Process and Technology for High-efficiency Conversion, College of Heilongjiang Province, Heilongjiang University, Harbin 150080 (China); Bi, Hong-Mei [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080 (China)] [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080 (China); Shi, Ke-Ying, E-mail: shikeying2008@yahoo.cn [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080 (China)] [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, School of Chemistry and Materials Science, Heilongjiang University, Harbin 150080 (China)

    2013-02-15T23:59:59.000Z

    Graphical abstract: The Ni(NiO)/semiconducting single-walled carbon nanotubes composite collected from the cathode after electro-deposition shows a high sensitivity to low-concentration NO gas at room temperature (18 °C). Display Omitted Highlights: ? Ni(NiO) nanoparticles were deposited on semiconducting SWCNTs by electro-deposition. ? Ni(NiO)/semiconducting SWCNTs film shows a high sensitivity to NO gas at 18 °C. ?Theoretical calculation reveals electron transfer from SWCNTs to NO via Ni. -- Abstract: Single-walled carbon nanotubes which contains metallic SWCNTs (m-SWCNTs) and semiconducting SWCNTs (s-SWCNTs) have been obtained under electric arc discharge. Their separation can be effectively achieved by the electro-deposition method. The Ni(NiO)/s-SWCNTs composite was found on cathode where Ni was partially oxidized to NiO at ambient condition with Ni(NiO) nanoparticles deposited uniformly on the bundles of SWCNTs. These results were confirmed by Raman spectra, transmission electron microscopy (TEM), scanning electron microscopy (SEM), UV–vis–NIR and TG characterizations. Furthermore, investigation of the gas sensing property of Ni(NiO)/s-SWCNTs composite film to NO gas at 18 °C demonstrated the sensitivity was approximately 5% at the concentration of 97 ppb. Moreover, density functional theory (DFT) calculations were performed to explore the sensing mechanism which suggested the adsorption of NO molecules onto the composite through N–Ni interaction as well as the proposition of electron transfer mechanisms from SWCNTs to NO via the Ni medium.

  7. Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat

    E-Print Network [OSTI]

    Shepelyansky, Dima

    Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

  8. Development of a Bulk GaN Growth Technique for Low Defect Density...

    Broader source: Energy.gov (indexed) [DOE]

    current due to bulk defects GaN is Grown Heteroepitaxially on Sapphire (and Silicon Carbide) Substrates * As grown GaN nucleation layers contain disordered GaN with many...

  9. The stellar (n,gamma) cross section of 62Ni

    E-Print Network [OSTI]

    H. Nassar; M. Paul; I. Ahmad; D. Berkovits; M. Bettan; P. Collon; S. Dababneh; S. Ghelberg; J. P. Greene; A. Heger; M. Heil; D. J. Henderson; C. L. Jiang; F. Kaeppeler; H. Koivisto; S. O'Brien; R. C. Pardo; N. Patronis; T. Pennington; R. Plag; K. E. Rehm; R. Reifarth; R. Scott; S. Sinha; X. Tang; R. Vondrasek

    2005-03-12T23:59:59.000Z

    The 62Ni(n,gamma)63Ni(t_1/2=100+-2 yrs) reaction plays an important role in the control of the flow path of the slow neutron-capture (s-) nucleosynthesis process. We have measured for the first time the total cross section of this reaction for a quasi-Maxwellian (kT = 25 keV) neutron flux. The measurement was performed by fast-neutron activation, combined with accelerator mass spectrometry to detect directly the 63Ni product nuclei. The experimental value of 28.4+-2.8 mb, fairly consistent with a recent theoretical estimate, affects the calculated net yield of 62Ni itself and the whole distribution of nuclei with 62

  10. Electrodeposition of amorphous matrix Ni-W/Wp̳ composites

    E-Print Network [OSTI]

    Jenket, Donald R. (Donald Robert)

    2005-01-01T23:59:59.000Z

    An amorphous Ni-W alloy matrix was incorporated with W particulate through two types of electrodeposition. The plating bath for the electrodeposition contained nickel sulfate, sodium tungstate, sodium citrate, ammonium ...

  11. Double dumbbell shaped AgNi alloy by pulsed electrodeposition

    SciTech Connect (OSTI)

    Dhanapal, K.; Vasumathi, M.; Santhi, Kalavathy [Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600 025 (India); Narayanan, V., E-mail: stephen-arum@hotmail.com; Stephen, A., E-mail: stephen-arum@hotmail.com [Department of Inorganic Chemistry, University of Madras, Guindy Campus, Chennai-600 025 (India)

    2014-01-28T23:59:59.000Z

    Silver-Nickel is the well-known thermally immiscible system that makes them quite complex for the formation of alloy. This kind of alloy can be attained from electrodeposition method. In the present work, AgNi alloy was synthesized by pulsed electrodeposition in a single bath two electrode system with the use of anodic alumina membrane. The prepared AgNi alloy and pure Ag were characterized with X-ray Diffraction (XRD) for structural confirmation, Scanning Electron Microscopy (SEM) for morphological, and magnetic properties by Vibrating Sample Magnetometer, respectively. The X-ray Diffraction study shows the formation of cubic structure for pure Ag. SEM analysis reveals the double dumbbell morphology for AgNi alloy and spherically agglomeration for pure silver. Hysteresis behaviour from VSM measurement indicates that the AgNi alloy have good ferro-magnetic properties.

  12. alloying ni yoru: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    memory alloy Elastic modulus Wrinkling Thermoelastic strain in a polycrystalline Fe-Pd thin film 213 (X?1.5) Alloys 1 CiteSeer Summary: A series Ni41-xMn50Sn9+x of Heusler...

  13. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2013-11-04T23:59:59.000Z

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  14. The Essentials for GA Water Planning The Relationship

    E-Print Network [OSTI]

    Rosemond, Amy Daum

    " FL Water Law Regulated Riparianism "Heavy" Admin Water Law ? #12;Comprehensive Water Resource Study Supply a. Water Allocation ­ Withdrawal Permit Program b. Water Storage & Delivery c. Interbasin TransferThe Essentials for GA Water Planning The Relationship Between the Proposed GA State Comprehensive

  15. Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n-lnGaAs/lnP/p-InGaAs heterostructures

    E-Print Network [OSTI]

    Luryi, Serge

    Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n (Received 23 November 1992; accepted for publication 4 March 1993) The realization of collector-up light for the collector stripe definition. Electrons, injected over the wide-gap heterostructure barrier (InAlAs or In

  16. The wetting behavior of NiAl and NiPtAl on polycrystalline alumina

    SciTech Connect (OSTI)

    Saiz, Eduardo; Gauffier, Antoine; Saiz, Eduardo; Tomsia, Antoni P.; Hou, Peggy Y.

    2007-07-01T23:59:59.000Z

    In order to understand the beneficial effect of Pt on the adherence of thermally grown alumina scales, sessile drop experiments were performed to study the wetting of poly-crystalline alumina by nickel-aluminum alloys with or without platinum addition where the amount of Pt ranged from 2.4 to 10 at.%. Subsequent interfacial structure was evaluated using atomic force microscopy. Platinum addition enhances the wettability of NiAl alloys on alumina, reduces the oxide/alloy interface energy and increases the interfacial mass transport rates.

  17. Shape memory behavior of ultrafine grained NiTi and TiNiPd shape memory alloys

    E-Print Network [OSTI]

    Kockar, Benat

    2009-05-15T23:59:59.000Z

    The cyclic instability in shape memory characteristics of NiTi-based shape memory alloys (SMAs), such as transformation temperatures, transformation and irrecoverable strains and transformation hysteresis upon thermal and mechanical cycling limits...

  18. High-temperature phase stability and tribological properties of laser clad Mo{sub 2}Ni{sub 3}Si/NiSi metal silicide coatings

    SciTech Connect (OSTI)

    Lu, X.D. [Laboratory of Laser Materials Processing and Surface Engineering, School of Materials Science and Engineering, Beihang University (China); Wang, H.M. [Laboratory of Laser Materials Processing and Surface Engineering, School of Materials Science and Engineering, Beihang University (China)]. E-mail: wanghuaming@263.net

    2004-10-18T23:59:59.000Z

    Mo{sub 2}Ni{sub 3}Si/NiSi wear-resistant metal silicide composite coatings consisting of Mo{sub 2}Ni{sub 3}Si primary dendrite and interdendritic Mo{sub 2}Ni{sub 3}Si/NiSi eutectic were fabricated on substrate of an austenitic stainless steel AISI321 by laser cladding using Ni-Mo-Si elemental powder blends. The high-temperature structural stability of the coating was evaluated by aging at 800 deg. C for 1-50 h. High-temperature sliding wear resistance of the as-laser clad and aged coatings was evaluated at 600 deg. C. Results indicate that the Mo{sub 2}Ni{sub 3}Si/NiSi metal silicides coating has excellent high temperature phase stability. No phase transformation except the dissolution of the eutectic Mo{sub 2}Ni{sub 3}Si and the corresponding growth of the Mo{sub 2}Ni{sub 3}Si primary dendrite and no elemental diffusion from the coating into the substrate were detected after aging the coating at 800 deg. C for 50 h. Aging of the coating at 800 deg. C leads to gradual dissolution of the interdendritic eutectic Mo{sub 2}Ni{sub 3}Si and subsequent formation of a dual-phase structure with equiaxed Mo{sub 2}Ni{sub 3}Si primary grains distributed in the NiSi single-phase matrix. Because of the strong covalent-dominated atomic bonds and high volume fraction of the ternary metal silicide Mo{sub 2}Ni{sub 3}Si, both the original and the aged Mo{sub 2}Ni{sub 3}Si/NiSi coating has excellent wear resistance under pin-on-disc high-temperature sliding wear test conditions, although hardness of the aged coating is slightly lower than that of the as-clad coating.

  19. Partially filled intermediate band of Cr-doped GaN films

    SciTech Connect (OSTI)

    Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

    2012-05-14T23:59:59.000Z

    We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

  20. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05T23:59:59.000Z

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  1. GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications

    SciTech Connect (OSTI)

    Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

    2014-03-24T23:59:59.000Z

    We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

  2. Structure and phase transformation behaviour of electroless Ni-P composite coatings

    SciTech Connect (OSTI)

    Balaraju, J.N. [Surface Engineering Division, National Aerospace Laboratory, Bangalore 560017 (India)]. E-mail: jnbalraj@css.nal.res.in; Narayanan, T.S.N. Sankara [National Metallurgical Laboratory, Madras Centre, CSIR Complex Taramani, Chennai 600113 (India)]. E-mail: tsnsn@rediffmail.com; Seshadri, S.K. [Department of Metallurgical Engineering, Indian Institute of Technology Madras, Chennai 600036 (India)]. E-mail: sks@iitm.ac.in

    2006-04-13T23:59:59.000Z

    This paper addresses the structural characteristics and phase transformation behaviour of plain electroless Ni-P coating and electroless Ni-P-Si{sub 3}N{sub 4}, Ni-P-CeO{sub 2} and Ni-P-TiO{sub 2} composite coatings. The X-ray diffraction patterns of electroless Ni-P-Si{sub 3}N{sub 4}, Ni-P-CeO{sub 2} and Ni-P-TiO{sub 2} composite coatings are very similar to that of plain electroless Ni-P coating, both in as plated and heat-treated conditions. Selected area electron diffraction (SAED) patterns obtained on the Ni-P matrix of Ni-P-Si{sub 3}N{sub 4}, Ni-P-CeO{sub 2} and Ni-P-TiO{sub 2} composite coatings exhibit diffuse ring patterns resembling the one obtained for plain electroless Ni-P coating. Phase transformation behaviour studied by differential scanning calorimetry (DSC) indicates that the variation in crystallization temperature and the energy evolved during crystallization of plain electroless Ni-P coating and electroless Ni-P-Si{sub 3}N{sub 4}, Ni-P-CeO{sub 2} and Ni-P-TiO{sub 2} composite coatings is not significant. The study concludes that incorporation of Si{sub 3}N{sub 4}, CeO{sub 2} and TiO{sub 2} particles in the Ni-P matrix does not have any influence on the structure and phase transformation behaviour of electroless Ni-P coatings.

  3. Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high

  4. AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

  5. Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations

    E-Print Network [OSTI]

    Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

    2007-01-01T23:59:59.000Z

    A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

  6. High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor

    E-Print Network [OSTI]

    Lu, Bin

    In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

  7. Fabrication of quantum point contacts by engraving GaAsAlGaAs heterostructures with a diamond tip

    E-Print Network [OSTI]

    Hohls, Frank

    by hot-filament chemical vapor deposition of polycrystalline diamond onto a prepat- terned siliconFabrication of quantum point contacts by engraving GaAsÕAlGaAs heterostructures with a diamond tip for publication 17 July 2002 We use the all-diamond tip of an atomic force microscope for the direct engraving

  8. OPTIMIZATION OF GaN WINDOW LAYER FOR InGaN SOLAR CELLS USING POLARIZATION EFFECT

    E-Print Network [OSTI]

    Honsberg, Christiana

    on the design of wide-band gap GaN window layers for InGaN solar cells. Window layers serve to passivate the top into account during design of the solar cell to improve its collection efficiency. Previously, we have. The present work is a subset of the design optimization process for such solar cells, where we focus

  9. Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors

    E-Print Network [OSTI]

    Johnson, Derek Wade

    2014-07-31T23:59:59.000Z

    the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm Ga...

  10. Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics

    E-Print Network [OSTI]

    Klotzkin, David

    injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

  11. Diffusion of a Ga adatom on the GaAs(001)c(44)heterodimer surface: A first principles study

    E-Print Network [OSTI]

    Khare, Sanjay V.

    Diffusion of a Ga adatom on the GaAs(001)c(4×4)heterodimer surface: A first principles study J Diffusion barriers Reconstruction Density functional calculations The adsorption and diffusion behavior functional theory (DFT) computations in the local density approxima- tion. Structural and bonding features

  12. Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures with increasing external electric field, with the radiative component exhibiting weaker field dependence. © 2009 applied electric field in Ref. 12, the electric field dependent radiative recombination in particular has

  13. Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures M. Geddo,1,a)

    E-Print Network [OSTI]

    Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures M. Geddo,1,a) M. Patrini,1 G; accepted 5 May 2011; published online 20 June 2011) The effect of hydrogen irradiation on the optical for fiber optic communications. These promising results in view of the development of waveguides deserve

  14. An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3

    E-Print Network [OSTI]

    out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

  15. Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

  16. Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers

    E-Print Network [OSTI]

    Wetzel, Christian M.

    Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers C. Wetzel, Nagoya, Japan Received 11 December 1995; accepted for publication 21 February 1996 Infrared reflection, their alloys and potential substrates need to be investigated as well. Here we present a study of the infrared

  17. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Carrington, P. J. [Department of Electronic and Electrical Engineering, University College London, London (United Kingdom); Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

    2014-07-28T23:59:59.000Z

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  18. Single photon emission from site-controlled InGaN/GaN quantum dots

    SciTech Connect (OSTI)

    Zhang, Lei; Hill, Tyler A.; Deng, Hui, E-mail: dengh@umich.edu [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States)] [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States); Teng, Chu-Hsiang; Lee, Leung-Kway; Ku, Pei-Cheng, E-mail: peicheng@umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)] [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

    2013-11-04T23:59:59.000Z

    Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90?K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%–25% exhibited single photon emission at 10?K.

  19. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04T23:59:59.000Z

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  20. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07T23:59:59.000Z

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  1. Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells

    SciTech Connect (OSTI)

    Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

    2014-10-21T23:59:59.000Z

    High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

  2. Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well

    SciTech Connect (OSTI)

    Ramesh, V.; Kikuchi, A.; Kishino, K. [Department of Electrical and Electronics Engineering, Sophia University, Tokyo 102-8554, Japan and Nano-technology Research Center, Sophia University, Tokyo 102-8554 (Japan); CREST, JST, Saitama 332-0012 (Japan); Funato, M.; Kawakami, Y. [CREST, JST, Saitama 332-0012 (Japan); Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)

    2010-06-15T23:59:59.000Z

    The relaxation of lattice-mismatched strain by deep postetching was systematically investigated for InGaN/GaN multiple quantum wells (MQWs). A planar heterojunction wafer, which included an In{sub 0.21}Ga{sub 0.79}N (3.2 nm)/GaN (14.8 nm) MQW, was etched by inductively coupled plasma dry etching, to fabricate high-density nanopillar, nanostripe, and nanohole arrays. The etching depth was 570 nm for all nanostructures. The diameter of the nanopillars was varied from 50 to 300 nm, then the mesa stripe width of the nanostripes and the diameter of the nanoholes were varied from 100 nm to 440 nm and 50 nm to 310 nm, respectively. The effect of strain relaxation on various optical properties was investigated. For example, in an array of nanopillars with diameter 130 nm and interval 250 nm, a large blueshift in the photoluminescence (PL) emission peak from 510 nm (as-grown) to 459 nm occurred at room temperature (RT). PL internal quantum efficiency (defined by the ratio of PL integral intensity at 300 K to that at 4.2 K) was enhanced from 34% (as-grown) to 60%, and the PL decay time at 4.2 K was reduced from 22 ns (as-grown) to 4.2 ns. These results clearly indicate the reduction of lattice-mismatched strain by postetching, which enhanced strain reduction with decreasing nanopillar diameter down to a diameter of 130 nm, where the strain reduction became saturated. The dependence of RT-PL decay time on nanopillar diameter was measured, and the surface nonradiative recombination velocity was estimated to be 5.8x10{sup 2} cm/s. This relatively slow rate indicates a little etching damage.

  3. Anomalous codeposition of Fe-Ni alloys and Fe-Ni-SiO{sub 2} composites under potentiostatic conditions: Experimental study and mathematical model

    SciTech Connect (OSTI)

    Ramasubramanian, M.; Popova, S.N.; Popov, B.N.; White, R.E. [Univ. of South Carolina, Columbia, SC (United States). Dept. of Chemical Engineering; Yin, K.M. [Yuan-Ze Inst. of Tech., Taoyuan (Taiwan, Province of China)

    1996-07-01T23:59:59.000Z

    A mathematical model has been developed to describe the electrodeposition of Fe-Ni alloys and Fe-Ni-SiO{sub 2} composites under potentiostatic conditions. This model can be used to predict the polarization behavior, partial current densities, and alloy composition of each of the components as a function of the applied potential. Fe-Ni-SiO{sub 2} samples were deposited on platinum rotating disk electrodes from sulfate electrolytes under potentiostatic conditions, and the results obtained were compared to the model. The model predictions were found to agree well with the experimental observations for the Fe-Ni and Fe-Ni-SiO{sub 2} systems.

  4. Modified Ni-Cu catalysts for ethanol steam reforming

    SciTech Connect (OSTI)

    Dan, M.; Mihet, M.; Almasan, V.; Borodi, G. [National Institute for Research and Development of Isotopic and Molecular Technologies, 65-103 Donath Street, 400293, Cluj-Napoca (Romania)] [National Institute for Research and Development of Isotopic and Molecular Technologies, 65-103 Donath Street, 400293, Cluj-Napoca (Romania); Katona, G.; Muresan, L. [Univ. Babes Bolyai, Fac. Chem. and Chem. Eng.,11 Arany Janos, 400028, Cluj-Napoca (Romania)] [Univ. Babes Bolyai, Fac. Chem. and Chem. Eng.,11 Arany Janos, 400028, Cluj-Napoca (Romania); Lazar, M. D., E-mail: diana.lazar@itim-cj.ro [65-103 Donath Street (Romania)

    2013-11-13T23:59:59.000Z

    Three Ni-Cu catalysts, having different Cu content, supported on ?-alumina were synthesized by wet co-impregnation method, characterized and tested in the ethanol steam reforming (ESR) reaction. The catalysts were characterized for determination of: total surface area and porosity (N{sub 2} adsorption - desorption using BET and Dollimer Heal methods), Ni surface area (hydrogen chemisorption), crystallinity and Ni crystallites size (X-Ray Diffraction), type of catalytic active centers (Hydrogen Temperature Programmed Reduction). Total surface area and Ni crystallites size are not significantly influenced by the addition of Cu, while Ni surface area is drastically diminished by increasing of Cu concentration. Steam reforming experiments were performed at atmospheric pressure, temperature range 150-350°C, and ethanol - water molar ration of 1 at 30, using Ar as carrier gas. Ethanol conversion and hydrogen production increase by the addition of Cu. At 350°C there is a direct connection between hydrogen production and Cu concentration. Catalysts deactivation in 24h time on stream was studied by Transmission Electron Microscopy (TEM) and temperature-programmed reduction (TPR) on used catalysts. Coke deposition was observed at all studied temperatures; at 150°C amorphous carbon was evidenced, while at 350°C crystalline, filamentous carbon is formed.

  5. Field dependent emission rates in radiation damaged GaAs

    SciTech Connect (OSTI)

    Fleming, R. M.; Myers, S. M.; Wampler, W. R.; Lang, D. V.; Seager, C. H.; Campbell, J. M. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)

    2014-07-07T23:59:59.000Z

    We have measured the temperature and field dependence of emission rates from five traps in electron damaged GaAs. Four of the traps have previously been identified as radiation defects. One of the traps, seen in higher doped diodes, has not been previously identified. We have fit the data to a multiphonon emission theory that allows recombination in GaAs to be characterized over a broad range of temperature and electric field. These results demonstrate an efficient method to calculate field-dependent emission rates in GaAs.

  6. Effect of Sb on the Properties of GaInP Top Cells (Presentation)

    SciTech Connect (OSTI)

    Olson, J. M.; McMahon, W. E.; Kurtz, S.

    2006-05-01T23:59:59.000Z

    The summary of this report is that: (1) Sb can be used to increase V{sub oc} of a GaInP top cell; (2) the photovoltaic quality of GaInP is relatively unaffected by the presence of Sb; and (3) Sb-doped GaInP/GaAs tandem cells show promise for achieving efficiencies over 32%.

  7. Superconductivity in SrNi2P2 single crystals

    SciTech Connect (OSTI)

    Ronning, Filip [Los Alamos National Laboratory; Bauer, Eric D [Los Alamos National Laboratory; Park, Tuscon [Los Alamos National Laboratory; Thompson, Joe D [Los Alamos National Laboratory

    2009-01-01T23:59:59.000Z

    Heat capacity, magnetic susceptibility, and resistivity of SrNi{sub 2}P{sub 2} single crystals are presented, illustrating the structural transition at 325 K, and bulk superconductivity at 1.4 K. The magnitude of {Tc}, fits to the heat capacity data, the small upper critical field H{sub c2} = 390 Oe, and {kappa} = 2.1 suggests a conventional fully gapped superconductor. With applied pressure we find that superconductivity persists into the so-called 'collapsed tetragonal' phase, although the transition temperature is monotonically suppressed with increasing pressure. This argues that reduced dimensionality can be a mechanism for increasing the transition temperatures of layered NiP, as well as layered FeAs and NiAs, superconductors.

  8. Electrodeposition and corrosion resistance of Ni-W-B coatings

    SciTech Connect (OSTI)

    Steffani, C.P.; Dini, J.W. [Lawrence Livermore National Lab., CA (United States). Manufacturing and Materials Engineering Div.; Groza, J.R.; Palazoglu, A. [Univ. of California, Davis, CA (United States). Dept. of Chemical Engineering and Materials Science

    1997-08-01T23:59:59.000Z

    A ternary nickel-base alloy Ni-W-B has been developed for surface corrosion and wear resistance to replace chromium plating, which uses environmentally hazardous solutions. The deposition conditions used an alkaline bath and insoluble anodes. The as-deposited alloy typically contains 40 wt% W and 1 wt% B and has an amorphous or partially amorphous structure. These deposits compare favorably with hexavalent chromium deposits in throwing power, color uniformity, and reflectivity. The corrosion resistance of Ni-W-B alloy was compared with hexavalent chromium and electroless nickel deposits in a variety of acids, including hydrochloric, sulfuric, fluoroboric, and phosphoric. In all cases, best results were obtained with the Ni-W-B deposits.

  9. Bimetallic Fe-Ni Oxygen Carriers for Chemical Looping Combustion

    SciTech Connect (OSTI)

    Bhavsar, Saurabh; Veser, Goetz

    2013-11-06T23:59:59.000Z

    The relative abundance, low cost, and low toxicity of iron make Fe-based oxygen carriers of great interest for chemical looping combustion (CLC), an emerging technology for clean and efficient combustion of fossil and renewable fuels. However, Fe also shows much lower reactivity than other metals (such as Ni and Cu). Here, we demonstrate strong improvement of Fe-based carriers by alloying the metal phase with Ni. Through a combination of carrier synthesis and characterization with thermogravimetric and fixed-bed reactor studies, we demonstrate that the addition of Ni results in a significant enhancement in activity as well as an increase in selectivity for total oxidation. Furthermore, comparing alumina and ceria as support materials highlights the fact that reducible supports can result in a strong increase in oxygen carrier utilization.

  10. Hydrotreatment of Athabasca bitumen derived gas oil over Ni-Mo, Ni-W, and Co-Mo catalysts

    SciTech Connect (OSTI)

    Diaz-Real, R.A.; Mann, R.S.; Sambi, I.S. (Univ. of Ottawa, Ontario (Canada). Dept. of Chemical Engineering)

    1993-07-01T23:59:59.000Z

    The hydrotreatment of Athabasca bitumen derived heavy gas oil containing 4.08% S and 0.49% N was carried out in a trickle bed reactor over Ni-W, Ni-Mo, and Co-Mo catalysts supported on zeolite-alumina-silica at 623-698 K, LHSV of 1-4, gas flow rate 890 m[sup 3][sub H2]/m[sup 3][sub oil] (5,000 sef/bbl), and pressure of 6.89 MPa. Analyses for viscosity, density, aniline point, ASTM mid boiling point distillation, C/H ratio, and percentage of N and S in the final product were carried out to characterize the product oil. The amounts of N and S removed indicated the hydrodenitrogenation and hydrodesulfurization activity of the catalysts. Results of zeolite-alumina-silica-supported catalysts are compared to those obtained with commercially available Ni-Mo, Ni-W, and Co-Mo on [gamma]-alumina. Ni-Mo supported on zeolite-alumina-silica was most active and could remove as much as 99 % S and 89% N present in the oil at 698 K. The data for HDN and HDS fitted the pseudo first order model. The kinetic model is described in detail.

  11. Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices

    SciTech Connect (OSTI)

    Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy); Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio [University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

    2014-02-21T23:59:59.000Z

    We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

  12. Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs

    SciTech Connect (OSTI)

    Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Afonenko, A. A. [Belarussian State University (Belarus)] [Belarussian State University (Belarus); Dikareva, N. V. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation); Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Kudryavtsev, K. E.; Morozov, S. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Nekorkin, S. M. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)

    2013-11-15T23:59:59.000Z

    The waveguide effect of GaAsSb quantum wells in a semiconductor-laser structure based on GaAs is studied theoretically and experimentally. It is shown that quantum wells themselves can be used as waveguide layers in the laser structure. As the excitation-power density attains a value of 2 kW/cm{sup 2} at liquid-nitrogen temperature, superluminescence at the wavelength corresponding to the optical transition in bulk GaAs (at 835 nm) is observed.

  13. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D., E-mail: dipankarsaha@iitb.ac.in [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); IITB-Monash Research Academy, Indian Institute of Technology Bombay, Mumbai 400076 (India); Adari, R.; Sankaranarayan, S.; Kumar, A. [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India)] [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S. [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)] [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)

    2013-12-09T23:59:59.000Z

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  14. Beta-decay branching ratios of 62Ga

    E-Print Network [OSTI]

    A. Bey; B. Blank; G. Canchel; C. Dossat; J. Giovinazzo; I. Matea; V. Elomaa; T. Eronen; U. Hager; M. Hakala; A. Jokinen; A. Kankainen; I. Moore; H. Penttila; S. Rinta-Antila; A. Saastamoinen; T. Sonoda; J. Aysto; N. Adimi; G. De France; J. C. Thomas; G. Voltolini; T. Chaventré

    2008-04-17T23:59:59.000Z

    Beta-decay branching ratios of 62Ga have been measured at the IGISOL facility of the Accelerator Laboratory of the University of Jyvaskyla. 62Ga is one of the heavier Tz = 0, 0+ -> 0+ beta-emitting nuclides used to determine the vector coupling constant of the weak interaction and the Vud quark-mixing matrix element. For part of the experimental studies presented here, the JYFLTRAP facility has been employed to prepare isotopically pure beams of 62Ga. The branching ratio obtained, BR= 99.893(24)%, for the super-allowed branch is in agreement with previous measurements and allows to determine the ft value and the universal Ft value for the super-allowed beta decay of 62Ga.

  15. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect (OSTI)

    Emre Kavruk, Ahmet, E-mail: aekavruk@selcuk.edu.tr, E-mail: aekavruk@gmail.com; Koc, Fatih [Physics Department, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Sahin, Mehmet, E-mail: mehmet.sahin@agu.edu.tr, E-mail: mehsahin@gmail.com [Physics Department, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Department of Material Sciences and Nanotechnology Engineering, Abdullah Gul University, Kayseri (Turkey)

    2013-11-14T23:59:59.000Z

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  16. Lattice vibrations of pure and doped GaSe

    SciTech Connect (OSTI)

    Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

    2006-04-13T23:59:59.000Z

    The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

  17. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

    1981-01-01T23:59:59.000Z

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  18. Piezospectroscopic study of substitutional Ni in ZnO

    SciTech Connect (OSTI)

    Lavrov, E. V.; Herklotz, F. [Technische Universität Dresden, 01062 Dresden (Germany); Kutin, Y. S. [Kazan Federal University, Federal Center of Shared Facilities, 420008 Kazan (Russian Federation)

    2014-02-21T23:59:59.000Z

    The effect of uniaxial stress on the electronic {sup 3}T{sub 1}(F)?{sup 3}T{sub 2}(F) transitions of Ni{sup 2+} in ZnO at 4216, 4240, and 4247 cm{sup ?1} is investigated by means of Fourier transform IR absorption spectroscopy. A stress Hamiltonian is constructed which accounts for the behavior of these transitions under uniaxial stress. It is shown that the split pattern and polarization properties of these IR absorption lines are consistent with a dynamic Jahn-Teller effect in the {sup 3}T{sub 2}(F) state of Ni.

  19. Dynamical deformation effects in subbarrier fusion of $^{64}$Ni+$^{132}$Sn

    E-Print Network [OSTI]

    A. S. Umar; V. E. Oberacker

    2006-09-25T23:59:59.000Z

    We show that dynamical deformation effects play an important role in fusion reactions involving the $^{64}$Ni nucleus, in particular the $^{64}$Ni+$^{132}$Sn system. We calculate fully microscopic interaction potentials and the corresponding subbarrier fusion cross sections.

  20. Study of Martensitic Phase transformation in a NiTiCu Thin Film...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Phase transformation in a NiTiCu Thin Film Shape Memory Alloy Using Photoelectron Emission Microscopy. Study of Martensitic Phase transformation in a NiTiCu Thin Film Shape...

  1. A Hydrogen-Evolving Ni(P2N2)2 Electrocatalyst Covalently Attached...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Hydrogen-Evolving Ni(P2N2)2 Electrocatalyst Covalently Attached to a Glassy Carbon Electrode: Preparation, Characterization, A Hydrogen-Evolving Ni(P2N2)2 Electrocatalyst...

  2. Mitigation of Sulfur Poisoning of Ni/Zirconia SOFC Anodes by...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mitigation of Sulfur Poisoning of NiZirconia SOFC Anodes by Antimony and Tin . Mitigation of Sulfur Poisoning of NiZirconia SOFC Anodes by Antimony and Tin . Abstract: Surface...

  3. Proton Delivery and Removal in [Ni(PR2NR?2)2]2+ Hydrogen...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Delivery and Removal in Ni(PR2NR?2)22+ Hydrogen Production and Oxidation Catalysts. Proton Delivery and Removal in Ni(PR2NR?2)22+ Hydrogen Production and Oxidation...

  4. A MOSSBAUER STUDY OF AUSTENITE STABILITY AND IMPACT FRACTURE IN Fe - 6 Ni STEEL

    E-Print Network [OSTI]

    Fultz, Brent

    2011-01-01T23:59:59.000Z

    IMPACT FRACTURE IN Fe-6Ni STEEL Brent Thomas Fultz Materialscommercial cryogenic alloy steel was studied with regard toThe Experiments Fe-6Ni-lMn steel plate was received from the

  5. Effect of Aging Heat Treatments on Ni52Ti48 Shape Memory Alloy

    E-Print Network [OSTI]

    Akin, Erhan

    2011-10-21T23:59:59.000Z

    Ni-rich NiTi shape memory alloys (SMAs) are capable of attaining a wide range of transformation temperatures depending on the heat treatment conditions and superior thermo-mechanical cycling stability, which are desired for repeated solid...

  6. Assessing the Bioavailability of Ni in Smelter Contaminated Soils. (S11-everhart242852-oral)

    E-Print Network [OSTI]

    Sparks, Donald L.

    Assessing the Bioavailability of Ni in Smelter Contaminated Soils. (S11-everhart242852-oral efforts. In this study, Welland Loam and Quarry Muck soils contaminated with Ni from a smelter facility

  7. WELDABILITY OF GRAIN-REFINED Fe-12Ni-0.25Ti STEEL FOR CRYOGENIC APPLICATIONS

    E-Print Network [OSTI]

    Morris Jr., J.W.

    2013-01-01T23:59:59.000Z

    of the Cryogenic Nickel Steels, WRC Bull, 205, May, 1975.REFINED Fe-12Ni-0.25Ti STEEL FOR CRYOGENIC APPLICATIONS D.E.REFINED Fe-12Ni-0.25Ti STEEL FOR CRYOGENIC APPLICATIONS D.

  8. E-Print Network 3.0 - alloy fracture cu-ni Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    fracture cu-ni Search Powered by Explorit Topic List Advanced Search Sample search results for: alloy fracture cu-ni Page: << < 1 2 3 4 5 > >> 1 Ris-R-1276(EN) Final Report...

  9. X-ray absorption spectroscopy at the Ni-K edge in Stackhousia tryonii Bailey hyperaccumulator

    E-Print Network [OSTI]

    Kachenko, A.

    2009-01-01T23:59:59.000Z

    X-ray absorption spectroscopy at the Ni–K edge inin vivo by micro x-ray absorption spectroscopy (XAS) at theNi–K edge. Both x-ray absorption near edge structure and

  10. Development of a new electrodeposition process for plating of Zn-Ni-X (X=Cd, P) alloys. 1. Corrosion characteristics of Zn-Ni-Cd ternary alloys

    SciTech Connect (OSTI)

    Durairajan, A.; Haran, B.S.; White, R.E.; Popov, B.N.

    2000-05-01T23:59:59.000Z

    A new Zn-Ni-Cd plating process was developed which offers a unique way of controlling and optimizing the Ni and Cd contents in the final deposit. Zinc-nickel-cadmium alloy was deposited from a 0.5 M NiSO{sub 4} + 0.2 M ZnSO{sub 4} bath in the presence of 0.015 M CdSO{sub 4} and 1 g/L nonyl phenyl polyethylene oxide. Using this process a Zn-Ni-Cd ternary alloy, with a higher nickel content as compared to that obtained from conventional Zn-Ni baths, was synthesized. The Zn-Ni-Cd alloy coatings deposited from an electrolyte containing 0.015 M (0.3%) CdSO{sub 4} has a Zn to Ni ratio of 2.5:1. The increase in nickel content accounts for the observed decrease in the corrosion potential to a value lower than that of Cd but higher than the corrosion potential of iron. The coatings have superior corrosion resistance and barrier properties than the typical Zn-Ni and cadmium coatings. Polarization studies and electrochemical impedance spectroscopy analysis on Zn-Ni-Cd coatings show a barrier resistance that is ten times higher than that of a conventional Zn-Ni coating.

  11. Anti-phase domains in cubic GaN

    SciTech Connect (OSTI)

    Maria Kemper, Ricarda; Schupp, Thorsten; Haeberlen, Maik; Lindner, Joerg; Josef As, Donat [University of Paderborn, Department of Physics, Warburger Str. 100, D-33098 Paderborn (Germany); Niendorf, Thomas; Maier, Hans-Juergen [University of Paderborn, Lehrstuhl fuer Werkstoffkunde, Pohlweg 47-49, D-33098 Paderborn (Germany); Dempewolf, Anja; Bertram, Frank; Christen, Juergen [University of Magdeburg, Institut fuer Festkoerperphysik, P.O. Box 4120, D-39016 Magdeburg (Germany); Kirste, Ronny; Hoffmann, Axel [Technische Universitaet Berlin, Institute of Solid State Physics, Hardenbergstr. 36, D-10623 Berlin (Germany)

    2011-12-15T23:59:59.000Z

    The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {l_brace}111{r_brace} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, {mu}-Raman and cathodoluminescence spectroscopy.

  12. Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching

    E-Print Network [OSTI]

    Chen, A.

    The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into ...

  13. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23T23:59:59.000Z

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  14. Kinetics of Mixed Ni-Al Precipitate Formation on a Soil Clay Fraction

    E-Print Network [OSTI]

    Sparks, Donald L.

    Kinetics of Mixed Ni-Al Precipitate Formation on a Soil Clay Fraction D A R R Y L R . R O B E R Management Laboratory, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland The kinetics of mixed Ni-Al Ni- Al LDH formation. The initial Ni concentration was 3 mM with a solid/solution ratio of 10 g L-1

  15. Epitaxial growth of Cu,,In,Ga...Se2 on GaAs,,110... and A. Rockett

    E-Print Network [OSTI]

    Rockett, Angus

    . INTRODUCTION The Cu(In, Ga)Se2 CIGS absorber layer in a recent record-efficiency CIGS solar cell1 has a 220.13 Commercially supplied ``epi-ready'' liquid- encapsulated Czo

  16. Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods

    E-Print Network [OSTI]

    Shi, Chentian; Yang, Fan; Park, Min Joo; Kwak, Joon Seop; Jung, Sukkoo; Choi, Yoon-Ho; Wang, Xiaoyong; Xiao, Min

    2013-01-01T23:59:59.000Z

    Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency droop induced by density-activated defect recombination in nanorod structure of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that the improvement is a combined effect of the amendment contributed by lateral carrier confinement and the deterioration made by surface trapping.

  17. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

    SciTech Connect (OSTI)

    Ledentsov, N. N., E-mail: nikolay.ledentsov@v-i-systems.com; Shchukin, V. A. [VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623 (Germany); Lyytikäinen, J.; Okhotnikov, O. [Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720 (Finland); Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V. [A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation); Schlichting, S.; Nippert, F.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623 (Germany)

    2014-11-03T23:59:59.000Z

    We report on green (550–560?nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (?500?A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (?550?nm at room temperature). At high current densities (>1?kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4?kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14?kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

  18. INVESTIGATION OF NOVEL ALLOY TiC-Ni-Ni3Al FOR SOLID OXIDE FUEL CELL INTERCONNECT APPLICATIONS

    SciTech Connect (OSTI)

    Rasit Koc; Geoffrey Swift; Hua Xie

    2005-01-25T23:59:59.000Z

    Solid oxide fuel cell interconnect materials must meet stringent requirements. Such interconnects must operate at temperatures approaching 800 C while resisting oxidation and reduction, which can occur from the anode and cathode materials and the operating environment. They also must retain their electrical conductivity under these conditions and possess compatible coefficients of thermal expansion as the anode and cathode. Results are presented in this report for fuel cell interconnect candidate materials currently under investigation based upon nano-size titanium carbide (TiC) powders. The TiC is liquid phase sintered with either nickel (Ni) or nickel-aluminide (Ni{sub 3}Al) in varying concentrations. The oxidation resistance of the submicron grain TiC-metal materials is presented as a function weight change versus time at 700 C and 800 C for varying content of metal/intermetallic in the system. Electrical conductivity at 800 C as a function of time is also presented for TiC-Ni to demonstrate the vitality of these materials for interconnect applications. TGA studies showed that the weight gain was 0.8 mg/cm{sup 2} for TiC(30)-Ni(30wt.%) after 100 hours in wet air at 800 C and the weight gain was calculated to be 0.5205 mg/cm{sup 2} for TiC(30)- Ni(10 wt.%) after 100 hours at 700 C and 100 hours at 800 C. At room temperature the electrical conductivity was measured to be 2444 1/[ohm.cm] for TiC-Ni compositions. The electrical conductivities at 800 C in air was recorded to be 19 1/[ohm.cm] after 125 hours. Two identical samples were supplied to PNNL (Dr. Jeff Stevenson) for ASR testing during the pre-decision period and currently they are being tested there. Fabrication, oxidation resistance and electrical conductivity studies indicate that TiC-Ni-Ni{sub 3}Al ternary appears to be a very important system for the development of interconnect composition for solid oxide fuel cells.

  19. Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

    SciTech Connect (OSTI)

    Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

    2014-11-07T23:59:59.000Z

    Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280?nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

  20. Vacancy-Vacancy Interactions in NiAl Matthew O. Zacate and Gary S. Collins

    E-Print Network [OSTI]

    Collins, Gary S.

    Vacancy-Vacancy Interactions in NiAl Matthew O. Zacate and Gary S. Collins Department of Physics, Washington State University, Pullman, WA 99164, USA Keywords: point defect, vacancy, defect interaction, intermetallic compound, perturbed angular correlation, PAC, NiAl Abstract. Interactions between Ni vacancies

  1. Reduced lattice temperature high-speed operation of pseudomorphic InGaAdGaAs field-effect transistors

    E-Print Network [OSTI]

    Kolodzey, James

    ,um GaAs buffer, 170 A Ino.zGao,sAs strained channel, 50 A undoped Ale,,,Ga,,,As undoped spacer, S dimensions of 0.25 x 200 pm and 0.5 X 200 pm with a source-drain spacing of 2 ,um. The MODFETs have gate dimensions of 0.35~ 100 pm and 0.47X 100 pm with a source-drain spacing of 1 ,um. The MISFETs have

  2. 60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate

    E-Print Network [OSTI]

    Choi, Woo-Young

    60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

  3. Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts

    SciTech Connect (OSTI)

    C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

    2003-07-10T23:59:59.000Z

    A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

  4. The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers

    E-Print Network [OSTI]

    have been operated in GaAs/AlGaAs and InP/InGaAsP mul- tiple quantum well MQW materials showed no evidence of mode-locked operation. Band-edge absorption spectra are also presented which

  5. Directional solidification studies in Ni-Al alloys

    SciTech Connect (OSTI)

    Lee, Je-hyun

    1993-05-01T23:59:59.000Z

    Three solid phases are involved in the phase equilibria of the intermetallic compound Ni{sub 3}Al near its melting point, {beta}, {gamma}{prime}(Ni{sub 3}Al), and {gamma}. The generally-accepted phase diagram involves a eutectic reaction between {beta}{prime} and {gamma}, but some recent studies agree with an older diagram due to Schramm, which has a eutectic reaction between the {beta} and {gamma}{prime} phases. The phase equilibria near Ni{sub 3}Al compositions was evaluated using quenched directional solidification experiments, that preserve the microstructures tonned at the solidification front, and using diffusion couple experiments. These experiments show that eutectic forms between {beta} and {gamma}{prime} phases, as in the Schramm diagram. Growth and phase transformations of these three phases are also studied in the directional solidification experiments. Microstructure analysis shows that etching of Ni{sub 3}Al({gamma}{prime}) is very sensitive to small composition variations and crystallographic orientation changes. The eutectic solidification study confirms that the equilibrium eutectic is {gamma}{prime}+{beta}, and that the metastable {gamma}+{beta} eutectic might be also produced in this system according to the impurities, solidification rates, and composition variations.

  6. Precipitation in 9Ni-12Cr-2Cu maraging steels

    SciTech Connect (OSTI)

    Stiller, K.; Haettestrand, M. [Chalmers Univ. of Technology, Goeteborg (Sweden). Dept. of Physics] [Chalmers Univ. of Technology, Goeteborg (Sweden). Dept. of Physics; Danoix, F. [Univ. de Rouen, Mont Saint Aignan (France). Lab. de Microscopie Ionique] [Univ. de Rouen, Mont Saint Aignan (France). Lab. de Microscopie Ionique

    1998-11-02T23:59:59.000Z

    Two maraging steels with the compositions 9Ni-12Cr-2Cu-4Mo (wt%) and 9Ni-12Cr-2Cu and with small additions of Al and Ti were investigated using atom probe field ion microscopy. Tomographic atom probe investigations were performed to clarify the spatial distribution of elements in and close to the precipitates. Materials heat treated at 475 C for 5, 25 min, 1, 2, 4 and 400 h were analyzed. Precipitates in the Mo-rich material were observed already after 5 min of aging, while in the material without MO, precipitation started later. In both materials precipitation begins with the formation of Cu-rich particles which work as nucleation sites for a Ni-rich phase of type Ni{sub 3}(Ti,Al). A Mo-rich phase was detected in the Mo-rich steel after 2 h of aging. The distribution of alloying elements in the precipitates, their role in the precipitation process, and the mechanism of hardening in the two materials are discussed.

  7. Monopole resonance strengths in Ni-58 and Pb-208

    E-Print Network [OSTI]

    Youngblood, David H.

    1997-01-01T23:59:59.000Z

    Giant monopole resonance strengths were obtained from small angle inelastic alpha scattering on Ni-58 and Pb-208 using deformed potential and folding models. Folding model analyses increase the sum rule strength in both nuclei, with 160% of the E0...

  8. Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Badcock, T. J., E-mail: Thomas.badcock@crl.toshiba.co.uk; Dawson, P.; Davies, M. J. [School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kappers, M. J.; Massabuau, F. C.-P.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

    2014-03-21T23:59:59.000Z

    We have studied the carrier recombination dynamics in an InGaN/GaN multiple quantum well structure as a function of emission energy and excitation density between temperatures of 10?K and 100?K. Under relatively low levels of excitation, the photoluminescence (PL) intensity and decay time of emission on the high energy side of the luminescence spectrum decrease strongly between 10?K and 50?K. In contrast, for emission detected on the low energy side of the spectrum, the PL intensity and decay time increase over the same temperature range. These results are consistent with a thermally activated carrier redistribution process in which the (temperature dependent) average timescale for carrier transfer into or out of a localised state depends on the energy of the given state. Thus, the transfer time out of shallow, weakly localised states is considerably shorter than the arrival time into more deeply localised states. This picture is consistent with carriers hopping between localisation sites in an uncorrelated disorder potential where the density of localised states decreases with increasing localisation depth, e.g., a exponential or Gaussian distribution resulting from random alloy disorder. Under significantly higher levels of excitation, the increased occupation fraction of the localised states results in a greater average separation distance between unoccupied localised states, causing a suppression of the spectral and dynamic signatures of the hopping transfer of carriers.

  9. Testing of ethylene propylene seals for the GA-4/GA-9 casks

    SciTech Connect (OSTI)

    Boonstra, R.H.

    1993-08-01T23:59:59.000Z

    The primary O-ring seal of the GA-4 and GA-9 casks was tested for leakage with a full-scale mockup of the cask lid and flange. Tests were performed at temperatures of ambient, {minus}41{degrees}, 121{degrees}, and 193{degrees}C. Shim plates between the lid and flange simulated gaps caused by thermal distortion. The testing used a helium mass spectrometer leak detector (MSLD). Results showed that the primary seal was leaktight for all test conditions. Helium permeation through the seal began in 13--23 minutes for the ambient tests and in 1--2 minutes for the tests at elevated temperatures. After each test several hours of the pumping were typically required to reduce the MSLD background reading to an acceptable level for the next test, indicating that the seal had become saturated with helium. To verify that the test results showed permeation and not real leakage, several response checks were conducted in which a calibrated leak source was inserted in the detector line near the seal. When the leak source was activated the detector responded within seconds.

  10. Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment

    SciTech Connect (OSTI)

    Ahmadi, Elaheh; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States); Chalabi, Hamidreza [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Kaun, Stephen W.; Shivaraman, Ravi; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2014-10-07T23:59:59.000Z

    The influence of alloy clustering on fluctuations in the ground state energy of the two-dimensional electron gas (2DEG) in AlGaN/GaN and InAlN/GaN heterostructures is studied. We show that because of these fluctuations, alloy clustering degrades the mobility even when the 2DEG wavefunction does not penetrate the alloy barrier unlike alloy disorder scattering. A comparison between the results obtained for AlGaN/GaN and InAlN/GaN heterostructures shows that alloy clustering limits the 2DEG mobility to a greater degree in InAlN/GaN heterostructures. Our study also reveals that the inclusion of an AlN interlayer increases the limiting mobility from alloy clustering. Moreover, Atom probe tomography is used to demonstrate the random nature of the fluctuations in the alloy composition.

  11. Effect of Composition on the Solidification Behavior of Several Ni-Cr-Mo and Fe-Ni-Cr-Mo Alloys

    E-Print Network [OSTI]

    DuPont, John N.

    simulate the solidifi- cation behavior of dissimilar welds made between AL-6XN and Ni-base filler metals.[3 differential thermal analysis (DTA) samples and welded specimens. This explains the in- variance of the amount of eutectic constituent observed in the microstructure in the welded and DTA conditions. Multicomponent

  12. Improved magnetoelectric performance of the Ni-P/Ni/Pb(Zr,TiO)3 cylindrical layered composites

    E-Print Network [OSTI]

    Volinsky, Alex A.

    ) cylindrical layered magnetoelectric (ME) composites have been prepared by electroless deposition, and electroless deposition.9­12 Improving magnetoelectric device characteristics can be achieved by enhancing via magnetic flux concentration. Nickel is a kind of universal strong magnetic material, while Ni

  13. Low-temperature magnetization in Ni-rich gamma-Ni100-x-yFexVy alloys

    E-Print Network [OSTI]

    Chakraborty, S.; Mukherjee, GD; Rathnayaka, KDD; Naugle, Donald G.; Majumdar, AK.

    2000-01-01T23:59:59.000Z

    Detailed studies of the temperature dependence of the spontaneous magnetization have been made in eight different compositions of gamma-Ni100-x-yFexVy (4 less than or equal to x less than or equal to 17; 2 less than or equal to y less than or equal...

  14. El Ni~no and La Ni~na: Causes and Global Consequences Michael J McPhaden

    E-Print Network [OSTI]

    releases heat into the middle and upper troposphere. This heat provides a source of energy to drive global wind fields that extend El Ni~no's influence to remote parts of the planet. Altered circulation patterns produce droughts, floods, unusual storminess, heat waves, and other weather extremes that have

  15. First-principles investigations of Ni3Al(111) and NiAl(110) surfaces at metal dusting conditions

    SciTech Connect (OSTI)

    Saadi, Souheil

    2011-03-01T23:59:59.000Z

    We investigate the structure and surface composition of the {gamma}{prime}-Ni{sub 3}Al(111) and {beta}-NiAl(110) alloy surfaces at conditions relevant for metal dusting corrosion related to catalytic steam reforming of natural gas. In regular service as protective coatings, nickel-aluminum alloys are protected by an oxide scale, but in case of oxide scale spallation, the alloy surface may be directly exposed to the reactive gas environment and vulnerable to metal dusting. By means of density functional theory and thermochemical calculations for both the Ni{sub 3}Al and NiAl surfaces, the conditions under which CO and OH adsorption is to be expected and under which it is inhibited, are mapped out. Because CO and OH are regarded as precursors for nucleating graphite or oxide on the surfaces, phase diagrams for the surfaces provide a simple description of their stability. Specifically, this study shows how the CO and OH coverages depend on the steam to carbon ratio (S/C) in the gas and thereby provide a ranking of the carbon limits on the different surface phases.

  16. Au microstructure and the functional properties of Ni/Au finishes on ceramic IC packages

    SciTech Connect (OSTI)

    Winters, E.D.; Baxter, W.K. [Coors Electronic Package Co., Chattanooga, TN (United States); Braski, D.N.; Watkins, T.R. [Oak Ridge National Lab., TN (United States)

    1995-12-31T23:59:59.000Z

    Ni/Au plated finishes used on thick-film metallized multilayer ceramic packages for integrated circuits must meet functional requirements such as bondability, sealability, and solderability. Their ability to do so is dependent, among other things, on the ability of the Au deposit to inhibit the grain boundary diffusion and subsequent surface oxidation of Ni. In this study, the relation between functional performance, Ni diffusionr ate, and Au microstructure was examined. Extent of Ni diffusion during heating was determined by Auger electron spectroscopy for several electrolytic and electroless Ni/Au finishing processes. Results were correlated with differences in Au microstructures determined by SEM, atomic force microscopy, and XRD.

  17. A comparative study of magnetic behaviors in TbNi{sub 2}, TbMn{sub 2} and TbNi{sub 2}Mn

    SciTech Connect (OSTI)

    Wang, J. L., E-mail: jianli@uow.edu.au [Institute for Superconductivity and Electronic Materials, University of Wollongong, Wollongong, NSW 2522 (Australia); Bragg Institute, ANSTO, Lucas Heights, NSW 2234 (Australia); Md Din, M. F.; Hong, F.; Cheng, Z. X.; Dou, S. X. [Institute for Superconductivity and Electronic Materials, University of Wollongong, Wollongong, NSW 2522 (Australia); Kennedy, S. J.; Studer, A. J. [Bragg Institute, ANSTO, Lucas Heights, NSW 2234 (Australia); Campbell, S. J. [School of Physical, Environmental and Mathematical Sciences, The University of New South Wales, Canberra, ACT 2600 (Australia); Wu, G. H. [Institute of Physics, Chinese Academy of Science, Beijing 100190 (China)

    2014-05-07T23:59:59.000Z

    All TbNi{sub 2}, TbMn{sub 2}, and TbNi{sub 2}Mn compounds exhibit the cubic Laves phase with AB{sub 2}-type structure in spite of the fact that the ratio of the Tb to transition-metal components in TbNi{sub 2}Mn is 1:3. Rietveld refinement indicates that in TbNi{sub 2}Mn the Mn atoms are distributed on both the A (8a) and B (16d) sites. The values of the lattice constants were measured to be a?=?14.348?Å (space group F-43?m), 7.618?Å, and 7.158?Å (space group Fd-3?m) for TbNi{sub 2}, TbMn{sub 2}, and TbNi{sub 2}Mn, respectively. The magnetic transition temperatures T{sub C} were found to be T{sub C}?=?38?K and T{sub C}?=?148?K for TbNi{sub 2} and TbNi{sub 2}Mn, respectively, while two magnetic phase transitions are detected for TbMn{sub 2} at T{sub 1}?=?20?K and T{sub 2}?=?49?K. Clear magnetic history effects in a low magnetic field are observed in TbMn{sub 2} and TbNi{sub 2}Mn. The magnetic entropy changes have been obtained.

  18. Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

    SciTech Connect (OSTI)

    Schmidt, Gordon, E-mail: Gordon.Schmidt@ovgu.de; Müller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jürgen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, 39106 Magdeburg (Germany); Glauser, Marlene; Carlin, Jean-François; Cosendey, Gatien; Butté, Raphaël; Grandjean, Nicolas [Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

    2014-07-21T23:59:59.000Z

    Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

  19. Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe

    E-Print Network [OSTI]

    A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

    2009-01-15T23:59:59.000Z

    Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

  20. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

    SciTech Connect (OSTI)

    Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

    2010-01-15T23:59:59.000Z

    The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

  1. Maskless lateral epitaxial overgrowth of GaN on sapphire

    SciTech Connect (OSTI)

    Fini, P.; Marchand, H.; Ibbetson, J.P.; Moran, B.; Zhao, L.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.

    1999-07-01T23:59:59.000Z

    The authors demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed maskless LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 {micro}m) GaN layer on sapphire is selectively dry etched, leaving {approximately} 5 {micro}m-wide stripe mesas oriented in the <10{bar 1}0>{sub GaN} direction, with a 20 {micro}m period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a T, or overhang, morphology. As for LEO over an SiO{sub 2} mask, significant defect reduction (from {approximately} 10{sup 9} cm{sup {minus}2} to {approximately} 10{sup 6} cm{sup {minus}2}) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle ({approximately} 0.4--0.5{degree}) is relatively independent of growth temperature and wing aspect ratio.

  2. Pulsed laser annealing of Be-implanted GaN

    SciTech Connect (OSTI)

    Wang, H.T.; Tan, L.S.; Chor, E.F. [Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

    2005-11-01T23:59:59.000Z

    Postimplantation thermal processing of Be in molecular-beam-epitaxy-grown GaN by rapid thermal annealing (RTA) and pulsed laser annealing (PLA) was investigated. It has been found that the activation of Be dopants and the repair of implantation-induced defects in GaN films cannot be achieved efficiently by conventional RTA alone. On the other hand, good dopant activation and surface morphology and quality were obtained when the Be-implanted GaN film was annealed by PLA with a 248 nm KrF excimer laser. However, observations of off-resonant micro-Raman and high-resolution x-ray-diffraction spectra indicated that crystal defects and strain resulting from Be implantation were still existent after PLA, which probably degraded the carrier mobility and limited the activation efficiency to some extent. This can be attributed to the shallow penetration depth of the 248 nm laser in GaN, which only repaired the crystal defects in a thin near-surface layer, while the deeper defects were not annealed out well. This situation was significantly improved when the Be-implanted GaN was subjected to a combined process of PLA followed by RTA, which produced good activation of the dopants, good surface morphology, and repaired bulk and surface defects well.

  3. Ballistic magnetoresistance over 3000% in Ni nanocontacts at room temperature Harsh Deep Chopra* and Susan Z. Hua

    E-Print Network [OSTI]

    Chopra, Harsh Deep

    . In the present study, the BMR measurements were made on Ni nanocontacts electrodeposited between Ni wires to electrodeposition of the Ni nanocontact, the Ni wires except for the region in the im- mediate vicinity of the tip a nickel sulfamate electro- lyte (pH 3.4). We used a cathode potential of 1.1 V ver- sus a saturated

  4. In situ Study of the Formation of Silicide Phases in Amorphous Ni-Si Mixed Layers

    SciTech Connect (OSTI)

    Van Bockstael, C.; Detavernier, C; Van Meirhaeghe, R; Jordan-Sweet, J; Lavoie, C

    2009-01-01T23:59:59.000Z

    In this paper, we investigated Ni silicide phase formation when Si is added within an as deposited 50 nm Ni film. A series of 22 samples with a Si content varying from 0 to 50 at.% was prepared and systematically investigated with in situ x-ray diffraction. The inert oxide substrate was used to identify the phases which first crystallize in an amorphous Ni-Si mixture of a given concentration. The noncongruent silicides Ni{sub 3}Si and Ni{sub 3}Si{sub 2} are never observed to crystallize readily out of the mixture. A remarkable observation is the initial crystallization at low temperature of a hexagonal Ni-silicide, observed over a broad mixed layer composition [35-49%Si]; this hexagonal phase nucleates readily as a single phase [39-47%Si] or together with Ni{sub 2}Si [35-38%Si] or NiSi [49%Si]. This low-temperature phase is related to the high temperature {theta}-phase, but covers a wide composition range up to 47%Si. For the same Ni-Si films deposited on Si(100), the initial nucleation of the Ni(Si) mixture is similar as for the samples deposited on SiO{sub 2}, such that the complex sequence of metal-rich Ni-silicide phases typically observed during Ni/Si reactions is modified. For samples containing more than 21%Si, a simpler sequential phase formation was observed upon annealing. From pole figures, the phase formation sequence was observed to have a significant influence on the texture of the technologically relevant NiSi phase. For mixture composition ranging from 38% to 43%Si, the initial transient {theta}-phase appears extremely textured on Si(100). The observed transient appearance of a hexagonal phase is of importance in understanding the phase formation mechanisms in the Ni-Si system.

  5. GaAs-based high temperature electrically pumped polariton laser

    SciTech Connect (OSTI)

    Baten, Md Zunaid; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu; Frost, Thomas; Deshpande, Saniya; Das, Ayan [Center for Photonic and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Lubyshev, Dimitri; Fastenau, Joel M.; Liu, Amy W. K. [IQE, Inc., 119 Technology Drive, Bethlehem, Pennsylvania 18015 (United States)

    2014-06-09T23:59:59.000Z

    Strong coupling effects and polariton lasing are observed at 155?K with an edge-emitting GaAs-based microcavity diode with a single Al{sub 0.31}Ga{sub 0.69}As/Al{sub 0.41}Ga{sub 0.59}As quantum well as the emitter. The threshold for polariton lasing is observed at 90?A/cm{sup 2}, accompanied by a reduction of the emission linewidth to 0.85?meV and a blueshift of the emission wavelength by 0.89?meV. Polariton lasing is confirmed by the observation of a polariton population redistribution in momentum space and spatial coherence. Conventional photon lasing is recorded in the same device at higher pump powers.

  6. Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design

    SciTech Connect (OSTI)

    MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

    2000-04-25T23:59:59.000Z

    The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

  7. Novel electrolyte chemistries for Mg-Ni rechargeable batteries.

    SciTech Connect (OSTI)

    Garcia-Diaz, Brenda (Savannah River National Laboratory); Kane, Marie; Au, Ming (Savannah River National Laboratory)

    2010-10-01T23:59:59.000Z

    Commercial hybrid electric vehicles (HEV) and battery electric vehicles (BEV) serve as means to reduce the nation's dependence on oil. Current electric vehicles use relatively heavy nickel metal hydride (Ni-MH) rechargeable batteries. Li-ion rechargeable batteries have been developed extensively as the replacement; however, the high cost and safety concerns are still issues to be resolved before large-scale production. In this study, we propose a new highly conductive solid polymer electrolyte for Mg-Ni high electrochemical capacity batteries. The traditional corrosive alkaline aqueous electrolyte (KOH) is replaced with a dry polymer with conductivity on the order of 10{sup -2} S/cm, as measured by impedance spectroscopy. Several potential novel polymer and polymer composite candidates are presented with the best-performing electrolyte results for full cell testing and cycling.

  8. Simple intrinsic defects in GaAs : numerical supplement.

    SciTech Connect (OSTI)

    Schultz, Peter Andrew

    2012-04-01T23:59:59.000Z

    This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

  9. AlP/GaP distributed Bragg reflectors

    SciTech Connect (OSTI)

    Emberger, Valentin; Hatami, Fariba; Ted Masselink, W. [Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15, D-12489 Berlin (Germany); Peters, Sven [Sentech Instruments GmbH, Schwarzschildstr. 2, 12489 Berlin (Germany)

    2013-07-15T23:59:59.000Z

    Distributed Bragg reflectors with high reflectivity bands centered at wavelengths from 530 to 690 nm (green to red) based on AlP/GaP quarter-wave stacks are prepared on (001)GaP using gas-source molecular-beam epitaxy. Additionally, the complex refractive index of AlP is measured using spectroscopic ellipsometry within the range of 330-850 nm in order to facilitate an accurate reflector design. Structures consisting of 15 quarter-wave stacks reach a peak reflectance between 95% and 98%, depending on the spectral position of the maximum.

  10. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect (OSTI)

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18T23:59:59.000Z

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  11. Sources of stress gradients in electrodeposited Ni MEMS.

    SciTech Connect (OSTI)

    Hearne, Sean Joseph; Floro, Jerrold Anthony; Dyck, Christopher William

    2004-06-01T23:59:59.000Z

    The ability of future integrated metal-semiconductor micro-systems such as RF MEMS to perform highly complex functions will depend on developing freestanding metal structures that offer improved conductivity and reflectivity over polysilicon structures. For example, metal-based RF MEMS technology could replace the bulky RF system presently used in communications, navigation, and avionics systems. However, stress gradients that induce warpage of active components have prevented the implementation of this technology. Figure 1, is an interference micrograph image of a series of cantilever beams fabricated from electrodeposited Ni. The curvature in the beams was the result of stress gradients intrinsic to the electrodeposition process. To study the sources of the stress in electrodeposition of Ni we have incorporated a wafer curvature based stress sensor, the multibeam optical stress sensor, into an electrodeposition cell. We have determined that there are two regions of stress induced by electrodepositing Ni from a sulfamate-based bath (Fig 2). The stress evolution during the first region, 0-1000{angstrom}, was determined to be dependent only on the substrate material (Au vs. Cu), whereas the stress evolution during the second region, >1000{angstrom}, was highly dependent on the deposition conditions. In this region, the stress varied from +0.5 GPa to -0.5GPa, depending solely on the deposition rate. We examined four likely sources for the compressive intrinsic stress, i.e. reduction in tensile stress, and determined that only the adatom diffusion into grain boundaries model of Sheldon, et al. could account for the observed compressive stress. In the presentation, we shall discuss the compressive stress generation mechanisms considered and the ramifications of these results on fabrication of electrodeposited Ni for MEMS applications.

  12. Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions

    E-Print Network [OSTI]

    Hisaka, Takayuki

    We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity ...

  13. Electric field engineering in GaN high electron mobility transistors

    E-Print Network [OSTI]

    Zhao, Xu, S.M. Massachusetts Institute of Technology

    2008-01-01T23:59:59.000Z

    In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

  14. Site-controlled fabrication of Ga nanodroplets by focused ion beam

    SciTech Connect (OSTI)

    Xu, Xingliang; Wang, Zhiming M., E-mail: zhmwang@gmail.com [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Wu, Jiang; Li, Handong; Zhou, Zhihua [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Wang, Xiaodong [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

    2014-03-31T23:59:59.000Z

    Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

  15. Device-level thermal analysis of GaN-based electronics

    E-Print Network [OSTI]

    Bagnall, Kevin Robert

    2013-01-01T23:59:59.000Z

    Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

  16. Light extraction in individual GaN nanowires on Si for LEDs

    E-Print Network [OSTI]

    Zhou, Xiang

    GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

  17. High performance double pulse doped pseudomorphic AlGaAs/InGaAs transistors grown by molecular-beam epitaxy

    SciTech Connect (OSTI)

    Hoke, W.E.; Lyman, P.S.; Labossier, W.H.; Brierley, S.K.; Hendriks, H.T.; Shanfield, S.R.; Aucoin, L.M.; Kazior, T.E. [Raytheon Research Division, Lexington, MA (United States)] [Raytheon Research Division, Lexington, MA (United States)

    1992-05-01T23:59:59.000Z

    Double pulse doped AlGaAs/InGaAs pseudomorphic high electron mobility transistors have been grown by molecular-beam epitaxy on GaAs substrates. Hall mobilities in excess of 7100 cm{sup 2}/V s at 300 K and 25000 cm{sup 2}/V s at 77 K are obtained with a sheet density of 3 x 10{sup 12} cm{sup {minus}2}. Photoluminescence measurements indicate that two electronic subbands are occupied, and the subband energies are determined. The doping pulses are resolved in secondary ion mass spectrometry measurements. Using a double recess process, transistors have been fabricated that have produced state of the art microwave performance. At 10 GHz a 1.2 mm device has simultaneously achieved a power added efficiency of 70%, output power of 0.97 W, and gain of 10 dB. 17 refs., 5 figs., 1 tab.

  18. Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

    SciTech Connect (OSTI)

    Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko [Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan); Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel [National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101 (Philippines); Garcia, Alipio [Department of Physical Sciences, University of the Philippines, Baguio City 2600 (Philippines)

    2009-06-08T23:59:59.000Z

    We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

  19. High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

    SciTech Connect (OSTI)

    Young, N. G., E-mail: ngyoung@engineering.ucsb.edu; Farrell, R. M.; Iza, M.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Perl, E. E.; Keller, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Bowers, J. E.; Nakamura, S.; DenBaars, S. P. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2014-04-21T23:59:59.000Z

    We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

  20. Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence

    SciTech Connect (OSTI)

    Meneghini, M., E-mail: matteo.meneghini@dei.unipd.it; Carraro, S.; Meneghesso, G.; Trivellin, N.; Zanoni, E. [Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy)] [Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy); Mura, G. [University of Cagliari, Piazza d'Armi, 09123 Cagliari (Italy)] [University of Cagliari, Piazza d'Armi, 09123 Cagliari (Italy); Rossi, F.; Salviati, G. [IMEM-National Council of Research, Parco Area delle Scienze 37/A, 43124 Parma (Italy)] [IMEM-National Council of Research, Parco Area delle Scienze 37/A, 43124 Parma (Italy); Holc, K.; Weig, T.; Wagner, J. [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany)] [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany); Schade, L.; Karunakaran, M. A. [IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany)] [IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany); Schwarz, U. T. [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany) [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany); IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany)

    2013-12-02T23:59:59.000Z

    We present an investigation of the degradation of InGaN/GaN laser diodes grown on a GaN substrate. The results indicate that: (i) Ageing induces a significant increase in the threshold current (Ith) of the lasers, which is attributed to an increase in non-radiative recombination; (ii) Ith increase is correlated to a decrease in the micro-cathodoluminescence signal measured (after the removal of the top metallization) in the region under the ridge; (iii) micro-photoluminescence measurements indicate that constant current stress increases non-radiative recombination within the quantum wells (and not only within the barriers), and induces an increase in the emission wavelength of the degraded region.

  1. Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Edmunds, C.; Malis, O., E-mail: omalis@purdue.edu [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Shao, J. [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Shirazi-HD, M. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, M. J. [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

    2014-07-14T23:59:59.000Z

    We demonstrate THz intersubband absorption (15.6–26.1?meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14?meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a??40% reduction in the linewidth (from roughly 8 to 5?meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

  2. Facile approach to prepare hollow core–shell NiO microspherers for supercapacitor electrodes

    SciTech Connect (OSTI)

    Han, Dandan [Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, Harbin Engineering University, Harbin 150001 (China); College of Chemistry and Pharmaceutical Engineering, Jilin Institute of Chemical Technology, Jilin 132022 (China); Xu, Pengcheng [College of Chemistry and Pharmaceutical Engineering, Jilin Institute of Chemical Technology, Jilin 132022 (China); Jing, Xiaoyan [Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, Harbin Engineering University, Harbin 150001 (China); Wang, Jun, E-mail: zhqw1888@sohu.com [Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, Harbin Engineering University, Harbin 150001 (China); Institute of Advanced Marine Materials, Harbin Engineering University, Harbin 150001 (China); Song, Dalei; Liu, Jingyuan; Zhang, Milin [Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, Harbin Engineering University, Harbin 150001 (China)

    2013-07-15T23:59:59.000Z

    A facile lamellar template method (see image) has been developed for the preparation of uniform hollow core–shell structure NiO (HCS–NiO) with a nanoarchitectured wall structure. The prepared NiO was found to be highly crystalline in uniform microstructures with high specific surface area and pore volume. The results indicated that ethanol interacted with trisodium citrate played an important role for the formation of hollow core–shell spheres. On the basis of the analysis of the composition and the morphology, a possible formation mechanism was investigated. NiO microspheres with hollow core–shell showed excellent capacitive properties. The exceptional cyclic, structural and electrochemical stability with ?95% coulombic efficiency, and very low ESR value from impedance measurements promised good utility value of hollow core–shell NiO material in fabricating a wide range of high-performance electrochemical supercapacitors. - The hollow core–shell NiO was prepared with a facile lamellar template method. The prepared NiO show higher capacitance, lower ion diffusion resistance and better electroactive surface utilization for Faradaic reactions. - Highlights: • Formation of hollow core–shell NiO via a novel and facile precipitation route. • Exhibited uniform feature sizes and high surface area of hollow core–shell NiO. • Synthesized NiO has high specific capacitance ( 448 F g{sup 1}) and very low ESR value. • Increased 20% of long life cycles capability after 500 charge–discharge cycles.

  3. Proton spectroscopy of 48Ni, 46Fe, and 44Cr

    E-Print Network [OSTI]

    M. Pomorski; M. Pfützner; W. Dominik; R. Grzywacz; A. Stolz; T. Baumann; J. S. Berryman; H. Czyrkowski; R. D?browski; A. Fija?kowska; T. Ginter; J. Johnson; G. Kami?ski; N. Larson; S. N. Liddick; M. Madurga; C. Mazzocchi; S. Mianowski; K. Miernik; D. Miller; S. Paulauskas; J. Pereira; K. P. Rykaczewski; S. Suchyta

    2014-07-06T23:59:59.000Z

    Results of decay spectroscopy on nuclei in vicinity of the doubly magic 48Ni are presented. The measurements were performed with a Time Projection Chamber with optical readout which records tracks of ions and protons in the gaseous volume. Six decays of 48Ni including four events of two-proton ground-state radioactivity were recorded. An advanced reconstruction procedure yielded the 2p decay energy for 48Ni of Q2p = 1.29(4) MeV. In addition, the energy spectra of \\b{eta}-delayed protons emitted in the decays of 44Cr and 46Fe, as well as half-lives and branching ratios were determined. The results were found to be consistent with the previous measurements made with Si detectors. A new proton line in the decay of 44Cr corresponding to the decay energy of 760 keV is reported. The first evidence for the \\b{eta}2p decay of 46 Fe, based on one clear event, is shown.

  4. Present status of the KADoNiS database

    E-Print Network [OSTI]

    I. Dillmann; R. Plag; M. Heil; F. Käppeler; T. Rauscher

    2008-06-12T23:59:59.000Z

    The "Karlsruhe Astrophysical Database of Nucleosynthesis in Stars" (KADoNiS) project is an online database for experimental cross sections relevant to the $s$ process and $p$ process. It is available under \\http://nuclear-astrophysics.fzk.de/kadonis and consists of two parts. Part 1 is an updated sequel to the well-known Bao et al. compilations from 1987 and 2000, which is online since April 2005. An extension of this $s$-process database to $(n,p)$ and $(n,\\alpha)$ cross sections at $kT$= 30 keV, as in the first version of the Bao compilation, is planned. The second part of KADoNiS is a $p$-process library, which includes all available experimental data from $(p,\\gamma)$, $(p,n)$, $(\\alpha,\\gamma)$, $(\\alpha,n)$, $(\\alpha,\\alpha)$, $(n,\\alpha)$ and $(\\gamma,n)$ reactions in or close to the respective Gamow window. Despite the great number of reactions required for a $p$-process reaction network, experimental data is still scarce and up to now restricted to stable targets. Given here is a short overview about the present status of the KADoNiS database.

  5. Glass nanoimprint using amorphous Ni-P mold etched by focused-ion beam

    SciTech Connect (OSTI)

    Mekaru, Harutaka; Kitadani, Takeshi; Yamashita, Michiru; Takahashi, Masaharu [National Institute of Advanced Industrial Science and Technology (AIST), 1-2-1, Namiki, Tsukuba, Ibaraki 305-8564 (Japan); SAWA Plating Co., Ltd., 753 Hoshiro, Himeji, Hyogo 670-0804 (Japan); Hyogo Prefectural Institute of Technology, 3-1-12 Yukihira-cho, Suma-ku, Kobe 654-0037 (Japan); National Institute of Advanced Industrial Science and Technology (AIST), 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564 (Japan)

    2007-07-15T23:59:59.000Z

    The authors succeeded in glass-nanoimprint lithography of micropatterns and nanopatterns using an amorphous Ni-P alloy mold. Glasslike carbon has been used as a mold material to mold not only Pyrex glass but also quartz, because it is still stable at a temperature of 1650 deg. C. However, it is difficult to process glasslike carbon substrates into arbitrary shapes by machining. They thought that amorphous Ni-P alloy could be used as a mold material for industrial glass molding. If Ni is electroless plated when mixed with suitable amount of P on a Si wafer, the Ni-P alloy layer becomes amorphous. An appropriate ratio of Ni and P was determined by the results of x-ray-diffraction measurements. The optimized composition ratio of Ni-P was Ni:P=92:8 wt %. Moreover, line and space patterns and dot arrays with linewidths of as little as 500 nm were etched on the mold using focused-ion beam (FIB) and the processing accuracy for the amorphous Ni-P layer was compared with that for the pure Ni layer. The result was that patterns of 500 nm width were etched to a depth of 2 {mu}m on an amorphous Ni-P alloy mold and the processed surfaces were smooth. In contrast, in the case of the pure Ni layer, the processing line was notched and the sidewalls were very rough. The crystal grain seems to hinder the processing of the nanopattern. After FIB etching, the amorphous Ni-P alloy was thermally treated at 400 deg. C to improve the hardness. Finally, line and space patterns and dot arrays on the amorphous Ni-P alloy mold were nanoimprinted on Pyrex glass using a glass-nanoimprint system (ASHE0201) that National Institute of Advanced Industrial Science and Technology developed.

  6. Thickness Effect of Al-Doped ZnO Window Layer on Damp Heat Stability of CuInGaSe2 Solar Cells: Preprint

    SciTech Connect (OSTI)

    Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

    2011-07-01T23:59:59.000Z

    We investigated the damp heat (DH) stability of CuInGaSe2 (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 ?m to a modest 0.50 ?m over an underlying 0.10-?m intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 ?m/3 ?m) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85oC and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

  7. Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes

    SciTech Connect (OSTI)

    Zhou, Kun; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Liu, Jianping, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Zhang, Shuming; Li, Deyao; Zhang, Liqun; Yang, Hui [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Cai, Jin; Wang, Hui; Wang, H. B. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Suzhou Nanojoin Photonics Co., Ltd., Suzhou (China)

    2014-10-27T23:59:59.000Z

    The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3?nm–6?nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200?A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelength we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.

  8. Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer

    SciTech Connect (OSTI)

    Liang, S. H.; Tao, L. L.; Liu, D. P., E-mail: dpliu@iphy.ac.cn; Han, X. F., E-mail: xfhan@iphy.ac.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu, Y. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Université, BP 239, 54506 Vandoeuvre (France)

    2014-04-07T23:59:59.000Z

    We report a first principles theoretical investigation of spin polarized quantum transport in Mn{sub 2}Ga/MgO/Mn{sub 2}Ga and Mn{sub 3}Ga/MgO/Mn{sub 3}Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn{sub 2}Ga-based MTJs, however, only a 5% TMR ratio for Mn{sub 3}Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn{sub 2}Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn{sub 2}Ga/MgO/Mn{sub 2}Ga MTJ can be improved by inserting Co layer.

  9. Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system.

    SciTech Connect (OSTI)

    Seamons, John Andrew; Lilly, Michael Patrick; Reno, John Louis; Bielejec, Edward Salvador

    2004-11-01T23:59:59.000Z

    We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a unique flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected two-dimensional (2D)-2D tunneling results, we have found additional tunneling features that are related to the one-dimensional quantum wires.

  10. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Mingda [University of Notre Dame, IN (United States); Song, Bo [Cornell University, Ithaca, NY (United States); Qi, Meng [University of Notre Dame, IN (United States); Hu, Zongyang [University of Notre Dame, IN (United States); Nomoto, Kazuki [University of Notre Dame, IN (United States); Yan, Xiaodong [University of Notre Dame, IN (United States); Cao, Yu [IQE/HRL Labs; Johnson, Wayne [IQE, Westborough, MA (United States); Kohn, Erhard [University of Notre Dame, IN (United States); Jena, Debdeep [Cornell University, Ithaca, NY (United States); Xing, Grace Huili [Cornell University, Ithaca, NY (United States)

    2015-04-01T23:59:59.000Z

    In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m?{center_dot}cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW{center_dot}cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

  11. Single-crystal neutron diffraction studies on Ni-based metal-pnictide superconductor BaNi2As2

    SciTech Connect (OSTI)

    Kothapalli, Karunakar [Los Alamos National Laboratory; Ronning, F [Los Alamos National Laboratory; Bauer, E D [Los Alamos National Laboratory; Schultz, A J [Los Alamos National Laboratory; Nakotte, Heinz [Los Alamos National Laboratory

    2009-01-01T23:59:59.000Z

    We report the results of single-crystal neutron diffraction studies of the superconductor BaNi{sub 2}As{sub 2}. The experiments were performed on a tiny crystal of mass 0.8 mg at several temperatures between 20 and 200 K using the Single Crystal Diffractometer, SCD, at the Los Alamos Neutron Science Center. Above 130 K, BaNi{sub 2}As{sub 2} crystallizes in the tetragonal ThCr{sub 2}Si{sub 2} structure. Our neutron diffraction data corroborate a first-order structural transition around 130 K with a relatively large hysteresis of about 10K, in agreement with observations from bulk studies. The anisotropic thermal displacement coefficients are enhanced along c-axis approaching the transition, and a splitting is observed for in-plane type reflections below the transition, which is evidence for a change in crystal structure.

  12. Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a

    E-Print Network [OSTI]

    Woodall, Jerry M.

    Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a , Guohua Li b , Jerry MP photodiodes fabricated on GaP substrate with unique drift dominated design, which can build an electric field throughout the active region by varying the doping concentration. The InP/GaP photodiodes have been grown

  13. DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    Sites, James R.

    DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

  14. Hexagonal Growth Spirals on GaN Grown by Molecular Beam Epitaxy: Kinetics vs Thermodynamics

    E-Print Network [OSTI]

    Cohen, Philip I.

    prepared, Ga-polar GaN(0001) templates. The surface morphology was studied using reflection high-energy-edge energy of 0.26 eV/Ã?. They suggest that local conditions at step edges dominate the growth. 1 conducted ex situ using AFM. Desorption mass spectrometry (DMS) was used to measure the GaN growth rate. Our

  15. Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a

    E-Print Network [OSTI]

    Okamoto, Koichi

    is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

  16. TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron

    E-Print Network [OSTI]

    neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

  17. Free carrier induced spectral shift for GaAs filled metallic hole arrays

    E-Print Network [OSTI]

    New Mexico, University of

    . Soref, and J. A. D. Alamo, "Carrier-induced change in refractive index of InP, GaAs, and InGaAsP," IEEE-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave

  18. Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy

    E-Print Network [OSTI]

    Myers, Tom

    Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy A. J. Ptak, L. J-assisted molecular-beam epitaxy to study the dependence of oxygen incorporation on polarity and oxygen partial pressure. Oxygen incorporates at a rate ten times faster on nitrogen-polar GaN than on the Ga polarity

  19. $^{62}$Ni($n,?$) and $^{63}$Ni($n,?$) cross sections measured at n_TOF/CERN

    E-Print Network [OSTI]

    C. Lederer; C. Massimi; E. Berthoumieux; N. Colonna; R. Dressler; C. Guerrero; F. Gunsing; F. Käppeler; N. Kivel; M. Pignatari; R. Reifarth; D. Schumann; A. Wallner; S. Altstadt; S. Andriamonje; J. Andrzejewski; L. Audouin; M. Barbagallo; V. Becares; F. Becvar; F. Belloni; B. Berthier; J. Billowes; V. Boccone; D. Bosnar; M. Brugger; M. Calviani; F. Calvino; D. Cano-Ott; C. Carrapico; F. Cerutti; E. Chiaveri; M. Chin; G. Cortes; M. A. Cortes-Giraldo; I. Dillmann; C. Domingo-Pardo; I. Duran; N. Dzysiuk; C. Eleftheriadis; M. Fernandez-Ordonez; A. Ferrari; K. Fraval; S. Ganesan; A. R. Garc?a; G. Giubrone; M. B. Gomez-Hornillos; I. F. Goncalves; E. Gonzalez-Romero; F. Gramegna; E. Griesmayer; P. Gurusamy; S. Harrisopulos; M. Heil; K. Ioannides; D. G. Jenkins; E. Jericha; Y. Kadi; D. Karadimos; G. Korschinek; M. Krticka; J. Kroll; C. Langer; E. Lebbos; H. Leeb; L. S. Leong; R. Losito; M. Lozano; A. Manousos; J. Marganiec; S. Marrone; T. Martinez; P. F. Mastinu; M. Mastromarco; M. Meaze; E. Mendoza; A. Mengoni; P. M. Milazzo; F. Mingrone; M. Mirea; W. Mondalaers; C. Paradela; A. Pavlik; J. Perkowski; R. Plag; A. Plompen; J. Praena; J. M. Quesada; T. Rauscher; A. Riego; F. Roman; C. Rubbia; R. Sarmento; P. Schillebeeckx; S. Schmidt; G. Tagliente; J. L. Tain; D. Tarr?o; L. Tassan-Got; A. Tsinganis; L. Tlustos; S. Valenta; G. Vannini; V. Variale; P. Vaz; A. Ventura; M. J. Vermeulen; R. Versaci; V. Vlachoudis; R. Vlastou; T. Ware; M. Weigand; C. Weiß; T. J. Wright; P. Zugec

    2014-03-19T23:59:59.000Z

    The cross section of the $^{62}$Ni($n,\\gamma$) reaction was measured with the time-of-flight technique at the neutron time-of-flight facility n_TOF at CERN. Capture kernels of 42 resonances were analyzed up to 200~keV neutron energy and Maxwellian averaged cross sections (MACS) from $kT=5-100$ keV were calculated. With a total uncertainty of 4.5%, the stellar cross section is in excellent agreement with the the KADoNiS compilation at $kT=30$ keV, while being systematically lower up to a factor of 1.6 at higher stellar temperatures. The cross section of the $^{63}$Ni($n,\\gamma$) reaction was measured for the first time at n_TOF. We determined unresolved cross sections from 10 to 270 keV with a systematic uncertainty of 17%. These results provide fundamental constraints on $s$-process production of heavier species, especially the production of Cu in massive stars, which serve as the dominant source of Cu in the solar system.

  20. Properties of H, O and C in GaN

    SciTech Connect (OSTI)

    Pearton, S.J.; Abernathy, C.R.; Lee, J.W. [Univ. of Florida, Gainesville, FL (United States)] [and others

    1996-04-01T23:59:59.000Z

    The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

  1. 1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical

    E-Print Network [OSTI]

    Iosup, Alexandru

    1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical Higher Education: An XP Report. Epema, An Experience Report on Using Gamification in Technical Higher Education, ACM SIGCSE'14. http's not you, it's me · New ambition of GamificationU (Top-20 Eng/Tech*) ·

  2. Ohmic contacts to p-type GaP

    E-Print Network [OSTI]

    Jorge Estevez, Humberto Angel

    1996-01-01T23:59:59.000Z

    thickness used in this scheme. The samples were annealed for I @n at temperatures ranging from 3 5 0 to 4 5 0 'C. Lower values of the contact resistivity than those of the Si/Pd/Zn/Pd/p-GaP scheme were achieved by depositing an Aluminum layer on the top...

  3. Gallium Arsenide (GaAs) EDWARD D. PALIK

    E-Print Network [OSTI]

    Pulfrey, David L.

    constants of pure (semi-insulating) GaAs are derived from a number of papers including the far-infrared at. [4]; the near-IR work of Pikhtin and Yas'kov [5]; the calorim- etry work of Christensen et al. [6 reflection work of Philipp and Ehrenreich [9]; and the synchrotron transmission work of Cardona et al. [10

  4. Theory of weak localization in ferromagnetic (Ga,Mn)As

    E-Print Network [OSTI]

    Garate, Ion; Sinova, Jairo; Jungwirth, T.; MacDonald, A. H.

    2009-01-01T23:59:59.000Z

    We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence-band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find that at Mn...

  5. Response of GaAs to fast intense laser pulses

    E-Print Network [OSTI]

    Graves, JS; Allen, Roland E.

    1998-01-01T23:59:59.000Z

    Motivated by recent experiments, we have performed simulations which show in detail how the electrons and ions in GaAs respond to fast intense laser pulses (with durations of order 100 fs and intensities of order 1-10 TW/cm(2)). The method of tight...

  6. Recombination in Low-Bandgap InGaAs

    SciTech Connect (OSTI)

    Gfroerer, T. H.; Wanlass, M. W.

    2006-01-01T23:59:59.000Z

    We review our investigation of recombination in In{sub x}Ga{sub 1-x}As with indium concentrations ranging between x=0.53 (i.e., lattice-matched to InP) and x=0.78. External radiative efficiency measurements were used to study how defect-related and Auger mechanisms compete with radiative recombination. The results indicated that deep mid-gap levels facilitate defect-related recombination in lattice-matched InGaAs while shallower levels play a more important role in the indium-rich alloys. Subsequent sub-bandgap photoluminescence measurements confirmed the presence of deep levels in the lattice-matched InGaAs. The superlinear excitation dependence of the sub-gap emission led to a defect-related deep-donor/shallow-acceptor pair model. Recent cathodoluminescence measurements of the subgap transitions show no spatial contrast, supporting the assignment of this mechanism to evenly distributed point defects. We hypothesize that the deep states observed in lattice-matched InGaAs are related to imperfections in the incorporation of indium or gallium, which become less likely as the indium concentration is increased.

  7. Ballistic thermal point contacts made of GaAs nanopillars

    SciTech Connect (OSTI)

    Bartsch, Th.; Wetzel, A.; Sonnenberg, D.; Schmidt, M.; Heyn, Ch.; Hansen, W. [Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Jungiusstr. 11, 20355 Hamburg (Germany)

    2013-12-04T23:59:59.000Z

    We measure the thermal conductance of GaAs pillars that are only a few nanometers long. Our observations can be understood with a simple model, in which the pillars constitute thermal point contacts between 3D phonon reservoirs. Moreover, first measurements of the electronic transport through these pillars are presented.

  8. GA Tech Campus Emergency Response Team STANDARD OPERATING PROCEDURE

    E-Print Network [OSTI]

    GA Tech Campus Emergency Response Team GT-CERT STANDARD OPERATING PROCEDURE 09/29/2010 #12;2 Table as a condition for the appointment and continuing maintenance of membership. GT-CERT members operate for and to respond to emergency/disaster situations. 2.0 Purpose To establish procedures for the activation

  9. High-quality InP on GaAs

    E-Print Network [OSTI]

    Quitoriano, Nathaniel Joseph

    2006-01-01T23:59:59.000Z

    In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

  10. Substrate-dependent wetting layer formation during GaN growth: Impact on the morphology of the films

    SciTech Connect (OSTI)

    Sidorenko, A.; Peisert, H.; Neumann, H.; Chasse, T. [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany); Leibniz-Institut fuer Oberflaechenmodifizierung e.V. Permoserstrasse 15, D-04318 Leipzig (Germany); Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany)

    2007-08-15T23:59:59.000Z

    We have compared epitaxial growth of GaN films on 6H-SiC(0001)-({radical}(3)x{radical}(3))R30 deg. -Ga and on (0001)-sapphire. Predeposited Ga layers were nitrided by ion beam assisted molecular beam epitaxy. Whereas on SiC the initially deposited Ga covers the substrate surface completely, on sapphire only Ga droplets are present. The different distribution of the predeposited Ga affects the morphology of GaN significantly. Scanning electron microscopy and atomic force microscopy analysis of the grown films show that the complete wetting of the SiC substrate with Ga enhances finally the size and the flatness of GaN terraces and thus the quality of the film. X-ray photoelectron spectroscopy measurements reveal that metallic Ga resides also on top of the GaN films during the growth.

  11. Computational Study of Sulfur–nickel Interactions: A New S–Ni Phase Diagram

    SciTech Connect (OSTI)

    Wang, Jeng-Han; Liu, Meilin

    2007-06-22T23:59:59.000Z

    Prediction of the interactions between H2S-contaminated hydrogen fuel and Ni surfaces under conditions similar to those for solid oxide fuel cell (SOFC) operation using DFT (density function theory) calculations (with thermodynamic corrections) has resulted in a new S–Ni phase diagram, which suggests the existence of an intermediate state between clean Ni surfaces and nickel sulfides – sulfur atoms adsorbed on Ni surfaces. This prediction is consistent with many experimental observations relevant to sulfur poisoning of Nibased anodes in SOFCs, which cannot be explained using the existing S–Ni bulk phase diagram from classical thermodynamics. The accurate prediction of the adsorption phase is vital to a fundamental understanding of the sulfur poisoning mechanism of Ni-based anodes under SOFC operating conditions.

  12. Tribological behavior of NiTi alloy against 52100 steel and WC at elevated temperatures

    SciTech Connect (OSTI)

    Abedini, M. [School of Metallurgy and Materials Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Ghasemi, H.M., E-mail: hghasemi@ut.ac.ir [School of Metallurgy and Materials Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Ahmadabadi, M. Nili [School of Metallurgy and Materials Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

    2010-07-15T23:59:59.000Z

    The dry tribological behavior of a Ti-50.3 at.% Ni alloy at temperatures of 25 deg. C, 50 deg. C and 200 deg. C was studied. The wear tests were performed on a high temperature pin-on-disk tribometer using 52100 steel and tungsten carbide pins. The worn surfaces of the NiTi alloy were examined by scanning electron microscope. The results showed that in the wear tests involving steel pins, the wear rate of the NiTi decreased as the wear testing temperature was increased. However, for the NiTi/WC contact, a reverse trend was observed. There was also a large decrease in the coefficient of friction for the NiTi/steel contact with increasing wear testing temperature. The formation of compact tribological layers could be the main reason for the reduction of the wear rate and coefficient of friction of the NiTi/steel contact at higher wear testing temperatures.

  13. PT AND PT/NI "NEEDLE" ELETROCATALYSTS ON CARBON NANOTUBES WITH HIGH ACTIVITY FOR THE ORR

    SciTech Connect (OSTI)

    Colon-Mercado, H.

    2011-11-10T23:59:59.000Z

    Platinum and platinum/nickel alloy electrocatalysts supported on graphitized (gCNT) or nitrogen doped carbon nanotubes (nCNT) are prepared and characterized. Pt deposition onto carbon nanotubes results in Pt 'needle' formations that are 3.5 nm in diameter and {approx}100 nm in length. Subsequent Ni deposition and heat treatment results in PtNi 'needles' with an increased diameter. All Pt and Pt/Ni materials were tested as electrocatalysts for the oxygen reduction reaction (ORR). The Pt and Pt/Ni catalysts showed excellent performance for the ORR, with the heat treated PtNi/gCNT (1.06 mA/cm{sup 2}) and PtNi/nCNT (0.664 mA/cm{sup 2}) showing the highest activity.

  14. Testing a GaAs cathode in SRF gun

    SciTech Connect (OSTI)

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-03-28T23:59:59.000Z

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating gradient of the RF guns, potentially offering a long lived cathode with very low emittance. Testing this concept requires preparation of the cathode, transportation to the SRF gun and evaluation of the performance of the cathode and the gun at cryogenic temperatures. In our work at BNL, we successfully activated the bulk GaAs in the preparation chamber. The highest quantum efficient was 10% at 532 nm that fell to 0.5% after 100 hours. We explored three different ways to activate the GaAs. We verified that the GaAs photocathode remains stable for 30 hours in a 10{sup -11} Torr vacuum. Passing the photocathode through the low 10{sup -9} Torr transfer section in several seconds caused the QE to drop to 0.8%. The photocathode with 0.8% QE can be tested for the SRF gun. The gun and beam pipe were prepared and assembled. After baking at 200 C baking, the vacuum of the gun and beam pipe can sustain a low 10{sup -11} Torr at room temperature. The final test to extract electrons from the gun is ongoing. In this paper, we discuss our progress with this SRF gun and the results of the photocathode in preparation chamber and in magnet transfer line.

  15. Determination of subband energies and 2DEG characteristics of Al{sub x}Ga{sub 1?x}N/GaN heterojunctions using variational method

    SciTech Connect (OSTI)

    Manouchehri, Farzin; Valizadeh, Pouya; Kabir, M. Z., E-mail: kabir@encs.concordia.ca [Department of Electrical and Computer Engineering, Concordia University, Montreal, H3G 1M8 (Canada)

    2014-03-15T23:59:59.000Z

    A physics-based model based on the variational method for analyzing the two dimensional electron gas (2DEG) characteristics of polar AlGaN/GaN heterojunctions is developed. The 2DEG carrier concentration, the first and second energy subbands, and the position of the Fermi energy level are calculated for various barrier thicknesses, Al mole fractions, background dopant concentrations, and gate voltages for gated AlGaN/GaN heterojunctions. The results are in good agreement with the data reported based on self-consistent method. Whereas the aforementioned report has dealt with specific values of Al mole fraction, barrier thickness, and unintentional doping level, the present work provides a basis for calculating the 2DEG characteristics for the full range of these parameters. Furthermore, according to the proposed model, the applicability of the triangular approximation of the quantum well in AlGaN/GaN heterojunctions is evaluated.

  16. Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    SciTech Connect (OSTI)

    Cheng, Junjie [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China); Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Li, Jiadong; Miao, Bin; Wu, Dongmin, E-mail: dmwu2008@sinano.ac.cn [i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wang, Jine; Pei, Renjun, E-mail: rjpei2011@sinano.ac.cn [Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wu, Zhengyan, E-mail: zywu@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China)

    2014-08-25T23:59:59.000Z

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup ?14} to 10{sup ?8} M and a detection limit below 10{sup ?14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

  17. Quaternary InGaAsSb Thermophotovoltaic Diodes

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09T23:59:59.000Z

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  18. Surface structure and electrochemical characteristics of Ti-V-Cr bcc-type solid solution alloys sintered with Ni

    SciTech Connect (OSTI)

    Tsuji, Yoichiro; Yamamoto, Osamu; Matsuda, Hiromu; Toyoguchi, Yoshinori

    2000-07-01T23:59:59.000Z

    Ti-V-Cr bcc-type solid solution alloys can absorb a large amount of hydrogen and be applied to active materials of the negative electrode in Ni-MH batteries. However, because of the insolubility of Ni into these alloys, the electrochemical characteristics like discharge capacity and cycle life were poor. In order to increase the discharge capacity of hydrogen absorbing alloy electrodes, Ti-V-Cr bcc-type alloy powders were sintered with Ni in order to form Ni contained surface layer on the alloy surface. As sintering temperature rose up, the surface composition changed from TiNi to Ti{sub 2}Ni. TiNi surface layer showed better electrochemical characteristics. For the Ni adding method, Ni electroless plating was preferred because of good adhesion. As a result of optimized conditions, a discharge capacity of 570 mAh/g and an improvement of cycle life were achieved.

  19. Structural and Mössbauer spectroscopic study of Fe-Ni alloy nanoparticles

    SciTech Connect (OSTI)

    Kumar, Asheesh; Banerjee, S., E-mail: vsudar@barc.gov.in; Sudarsan, V., E-mail: vsudar@barc.gov.in [Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai-400085 (India); Meena, S. S. [Solid State Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai-400085 (India)

    2014-04-24T23:59:59.000Z

    Nano-crystalline Fe-Ni alloys have been synthesized in ethylene glycol medium. Based on XRD studies it is confirmed that, in these alloys Fe atoms are incorporated at Ni site to form Ni-Fe solid solutions. Mössbauer studies have established that for alloy particles having smaller size there is significant concentration of two different types of paramagnetic Fe species and their relative concentration decreased with increase in particle size.

  20. Communication: Influence of graphene interlayers on the interaction between cobalt phthalocyanine and Ni(111)

    SciTech Connect (OSTI)

    Uihlein, Johannes; Peisert, Heiko; Glaser, Mathias; Polek, Malgorzata; Adler, Hilmar; Petraki, Fotini; Chasse, Thomas [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 18, 72076 Tuebingen (Germany); Ovsyannikov, Ruslan; Bauer, Maximilian [Helmholtz Zentrum Berlin fuer Materialien und Energie GmbH, Elektronenspeicherring BESSY II, Albert-Einstein-Str. 15, 12489 Berlin (Germany)

    2013-02-28T23:59:59.000Z

    The influence of graphene interlayers on electronic interface properties of cobalt phthalocyanine on Ni(111) is studied using both photoemission and X-ray absorption spectroscopy. A charge transfer associated with a redistribution of the d-electrons at the Co-atom of the phthalocyanine occurs at the interface to Ni(111). Even a graphene buffer layer cannot prevent the charge transfer at the interface to Ni(111); however, the detailed electronic situation is different.

  1. INTERPRTATION DES FAUTES D'EMPILEMENT DANS L'ANTIFERROMAGNTIQUE K2NiF4

    E-Print Network [OSTI]

    Boyer, Edmond

    859. INTERPR�TATION DES FAUTES D'EMPILEMENT DANS L'ANTIFERROMAGN�TIQUE K2NiF4 Par R. PLUMIER. 2014 Nous montrons qu'une légère déformation orthorhombique de la maille de K2NiF4 entraîne parNiF4 cell leads to a decrease of the free energy of the crystal through an exchange striction

  2. Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Lin, Jie; Llopis, Antonio; Krokhin, Arkadii; Neogi, Arup, E-mail: arup@unt.edu [Department of Physics, University of North Texas, Denton, Texas 76203 (United States); Pereira, Sergio [CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Watson, Ian M. [SUPA, Institute of Photonics, University of Strathclyde, Glasgow (United Kingdom)

    2014-06-16T23:59:59.000Z

    The light enhancement phenomena in InGaN/GaN multi-quantum wells (MQWs) infiltrated with metal nanoparticles (NPs) are studied using resonant and off-resonant localized plasmon interactions. The emission and recombination characteristics of carriers in InGaN/GaN MQW structures with inverted hexagonal pits (IHPs) are modified distinctly depending on the nature of their interaction with the metal NPs and with the pumping and emitted photons. It is observed that the emission intensity of light is significantly enhanced when the emission energy is off-resonant to the localized plasmon frequency of the metal nanoparticles. This results in enhanced emission from MQW due to Au nanoparticles and from IHPs due to Ag nanoparticles. At resonant-plasmon frequency of the Ag NPs, the emission from MQWs is quenched due to the re-absorption of the emitted photons, or due to the drift carriers from c-plane MQWs towards the NPs because of the Coulomb forces induced by the image charge effect.

  3. Projected Performance of Three- and Four-Junction Devices Using GaAs and GaInP

    E-Print Network [OSTI]

    Gainp; S. R. Kurtz; Sarah R. Kurtz; D. Myers; D. Myers; J.M. Olson; J. M. Olson

    1997-01-01T23:59:59.000Z

    This paper explores the efficiencies expected for three- and four-junction devices for both space and terrestrial applications. For space applications, the effects of temperature and low concentration are investigated. For terrestrial applications, a concentration of 500 suns is assumed and the theoretical efficiencies are calculated as a function of spectral variations including the effects of air mass, turbidity, and water-vapor content. INTRODUCTION Ga 0.5 In 0.5 P/GaAs two-terminal, two-junction solar cells, invented and developed at the National Renewable Energy Laboratory, are in production at both TECSTAR and Spectrolab. The immediate market for these devices is in space; a future (potentially larger) market is terrestrial concentrator systems. The next-generation cells will add additional junction(s) in order to increase the efficiency. Work on a three-junction cell using an active Ge junction under the Ga 0.5 In 0.5 P/GaAs dual-junction cell has already been reported [1]. Ho...

  4. Electrical, thermal, and species transport properties of liquid eutectic Ga-In and Ga-In-Sn from first principles

    SciTech Connect (OSTI)

    Yu, Seungho; Kaviany, Massoud, E-mail: kaviany@umich.edu [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)] [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2014-02-14T23:59:59.000Z

    Using ab initio molecular dynamics, the atomic structure and transport properties of eutectic Ga-In and Ga-In-Sn are investigated. The Kubo-Greenwood (K-G) and the Ziman-Faber (Z-F) formulations and the Wiedemann-Franz (W-F) law are used for the electrical and electronic thermal conductivity. The species diffusivity and the viscosity are also predicted using the mean square displacement and the Stokes-Einstein (S-E) relation. Alloying Ga causes more disordered structure, i.e., broadening the atomic distance near the In and Sn atoms, which reduces the transport properties and the melting temperature. The K-G treatment shows excellent agreement with the experimental results while Z-F treatment formula slightly overestimates the electrical conductivity. The predicted thermal conductivity also shows good agreement with the experiments. The species diffusivity and the viscosity are slightly reduced by the alloying of Ga with In and Sn atoms. Good agreements are found with available experimental results and new predicted transport-property results are provided.

  5. Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

    2013-01-01T23:59:59.000Z

    The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

  6. Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Bia?ek, M., E-mail: marcin.bialek@fuw.edu.pl; Witowski, A. M.; Grynberg, M.; ?usakowski, J. [Faculty of Physics, University of Warsaw, ul. Ho?a 69, 00-681 Warsaw (Poland); Orlita, M.; Potemski, M. [Laboratoire National des Champs Magnetiques Intenses, CNRS-UJF-UPS-INSA, 25, avenue des Martyrs, 38042 Grenoble (France); Czapkiewicz, M. [Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw (Poland); Wróbel, J. [Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw (Poland); Faculty of Mathematics and Natural Sciences, Rzeszów University, al. Rejtana 16A, 35-959 Rzeszów (Poland); Umansky, V. [Weizmann Institute of Science, Rehevot 76100 (Israel)

    2014-06-07T23:59:59.000Z

    In order to characterize magnetic field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the magnetoplasmon resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.

  7. Simple route for the synthesis of supercapacitive Co-Ni mixed hydroxide thin films

    SciTech Connect (OSTI)

    Dubal, D.P. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (M.S.) (India) [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (M.S.) (India); Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712 (Korea, Republic of); Jagadale, A.D.; Patil, S.V. [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (M.S.) (India)] [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (M.S.) (India); Lokhande, C.D., E-mail: l_chandrakant@yahoo.com [Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (M.S.) (India)

    2012-05-15T23:59:59.000Z

    Highlights: Black-Right-Pointing-Pointer Novel method for deposition of Co-Ni mixed hydroxide. Black-Right-Pointing-Pointer Nanoparticle network of Co-Ni hydroxide. Black-Right-Pointing-Pointer High specific capacitance of 672 F g{sup -1}. Black-Right-Pointing-Pointer High discharge/charge rates. -- Abstract: Facile synthesis of Co-Ni mixed hydroxides films with interconnected nanoparticles networks through two step route is successfully established. These films have been characterized by X-ray diffraction (XRD), Fourier transform infrared technique (FTIR), scanning electron microscopy (SEM) and wettability test. Co-Ni film formation is confirmed from XRD and FTIR study. SEM shows that the surface of Co-Ni films is composed of interconnected nanoparticles. Contact angle measurement revealed the hydrophilic nature of films which is feasible for the supercapacitor. The electrochemical performance of the film is evaluated by cyclic voltammetry, and constant-current charge/discharge cycling techniques. Specific capacitance of the Co-Ni mixed hydroxide electrode achieved 672 F g{sup -1}. Impedance analysis shows that Co-Ni mixed hydroxide electrode provides less resistance for the intercalation and de-intercalation of ions. The Co-Ni mixed electrode exhibited good charge/discharge rate at different current densities. The results demonstrated that Co-Ni mixed hydroxide composite is very promising for the next generation high performance electrochemical supercapacitors.

  8. Effect of Pt addition on Ni silicide formation at low temperature: Growth, redistribution, and solubility

    SciTech Connect (OSTI)

    Hoummada, K.; Perrin-Pellegrino, C.; Mangelinck, D. [Aix-Marseille Universite, IM2NP, Campus de Saint-Jerome, Avenue Escadrille Normandie Niemen-Case 142, F-13397 Marseille Cedex (France); CNRS, IM2NP (UMR 6242), Case 142, Faculte de Saint-Jerome, F-13397 Marseille Cedex (France)

    2009-09-15T23:59:59.000Z

    The formation of Ni silicide during the reaction between Ni(5% Pt) and a Si(100) substrate has been analyzed by differential scanning calorimetry (DSC), in situ x-ray diffraction (XRD), cross-sectional transmission electron microscopy (TEM), and {sup 4}He{sup +} Rutherford backscattering. The DSC measurements show evidence of the Ni{sub 2}Si nucleation followed by lateral growth formation. In situ XRD and TEM have been used to investigate the sequence of formation of the silicides. These experiments show that the formations of Ni{sub 2}Si and NiSi occur simultaneously in the presence of the Pt alloy. The redistribution of platinum at different stages of the Ni silicide growth has been determined. We have estimated the solubility limit of platinum (1 at. % at 573 K) in the Ni{sub 2}Si phase by extrapolation from a measured value at 1073 K. This redistribution is explained in terms of the solubility limits and the diffusion of Pt in the Ni{sub 2}Si and NiSi phases. Pt is more likely to reside at the silicide grain boundaries and the interfaces where it can slow down the silicide growth kinetics.

  9. High-performance Ni[sub 3]Al synthesized from composite powders

    SciTech Connect (OSTI)

    Chiou, W.C.; Hu, C.T. (National Tsing Hua Univ., Hsinchu (Taiwan, Province of China). Dept. of Materials Science and Engineering)

    1994-05-01T23:59:59.000Z

    Specimens of Ni[sub 3]Al + B of high density (>99.3 pct RD) and relatively large dimension have been synthesized from composite powders through processes of replacing plating and electroless Ni-B plating on Al powder, sintering, and thermal-mechanical treatment. The uniformly coated Ni layer over fine Al or Ni core particles constituting these coating/core composite powders has advantages such as better resistance to oxidation relative to pure Al powder, a greater green density as a compacted powder than prealloyed powder, the possibility of atomically added B to the material by careful choice of a suitable plating solution, and avoidance of the expensive powder metallurgy (PM) equipment such as a hot isostatic press (HIP), hot press (HP), etc. The final Ni[sub 3]Al + B product is made from Ni-B-Al and Ni-B-Ni mixed composite powders by means of traditional PM processes such as compacting, sintering, rolling, and annealing, and therefore, the dimensions of the product are not constrained by the capacity of an HIP or HP. The properties of Ni[sub 3]Al composite powder metallurgy (CPM) specimens tested at room temperature have been obtained, and comparison with previous reports is conducted. A tensile elongation of about 16 pct at room temperature was attained.

  10. Ductile Ni.sub.3 Al alloys as bonding agents for ceramic materials

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN); McDonald, Robert R. (Traverse City, MI)

    1990-01-01T23:59:59.000Z

    An improved ceramic-metal composite comprising a mixture of a ceramic material with a ductile intermetallic alloy, preferably Ni.sub.3 Al.

  11. NiSource Energy Technologies: Optimizing Combined Heat and Power Systems

    SciTech Connect (OSTI)

    Not Available

    2003-01-01T23:59:59.000Z

    Summarizes NiSource Energy Technologies' work under contract to DOE's Distribution and Interconnection R&D. Includes studying distributed generation interconnection issues and CHP system performance.

  12. NiSource Energy Technologies Inc.: System Integration of Distributed Power for Complete Building Systems

    SciTech Connect (OSTI)

    Not Available

    2003-10-01T23:59:59.000Z

    Summarizes NiSource Energy Technologies' work under contract to DOE's Distribution and Interconnection R&D. Includes studying distributed generation interconnection issues and CHP system performance.

  13. Strain mediated coupling in magnetron sputtered multiferroic PZT/Ni-Mn-In/Si thin film heterostructure

    SciTech Connect (OSTI)

    Singh, Kirandeep; Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in [Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee-247667, Uttarakhand (India); Singh, Sushil Kumar [Functional Materials Division, Solid State Physics Lab (SSPL), DRDO, Lucknow Road, Timarpur, Delhi 110054 (India)

    2014-09-21T23:59:59.000Z

    The strain mediated electrical and magnetic properties were investigated in PZT/Ni-Mn-In heterostructure deposited on Si (100) by dc/rf magnetron sputtering. X-ray diffraction pattern revealed that (220) orientation of Ni-Mn-In facilitate the (110) oriented tertragonal phase growth of PZT layer in PZT/Ni-Mn-In heterostructure. A distinctive peak in dielectric constant versus temperature plots around martensitic phase transformation temperature of Ni-Mn-In showed a strain mediated coupling between Ni-Mn-In and PZT layers. The ferroelectric measurement taken at different temperatures exhibits a well saturated and temperature dependent P-E loops with a highest value of P{sub sat}???55 ?C/cm{sup 2} obtained during martensite-austenite transition temperature region of Ni-Mn-In. The stress induced by Ni-Mn-In layer on upper PZT film due to structural transformation from martensite to austenite resulted in temperature modulated Tunability of PZT/Ni-Mn-In heterostructure. A tunability of 42% was achieved at 290?K (structural transition region of Ni-Mn-In) in these heterostructures. I-V measurements taken at different temperatures indicated that ohmic conduction was the main conduction mechanism over a large electric field range in these heterostructures. Magnetic measurement revealed that heterostructure was ferromagnetic at room temperature with a saturation magnetization of ?123?emu/cm{sup 3}. Such multiferroic heterostructures exhibits promising applications in various microelectromechanical systems.

  14. Ultra High p-doping Material Research for GaN Based Light Emitters

    SciTech Connect (OSTI)

    Vladimir Dmitriev

    2007-06-30T23:59:59.000Z

    The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

  15. Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

    SciTech Connect (OSTI)

    Christy, Dennis; Watanabe, Arata; Egawa, Takashi [Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya, 466-8555 (Japan)

    2014-10-15T23:59:59.000Z

    The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical measurements, a gradual decrease of two-dimensional electron gas (2DEG) concentration near heterointerface as the function of NL thickness is observed possibly due to the reduction in difference of piezoelectric polarization charge densities between AlGaN and GaN layers. It also indicates that the minimum tensile stress and a relatively less total dislocation density for high pressure grown NL can ensure a 20 % increment in mobility at room temperature irrespective of the interface roughness. The thickness and pressure variations in NL and the subsequent changes in growth mode of AlN contributing to the post growth residual tensile stress are investigated using X-ray diffraction and Raman scattering experiments, respectively. The post growth intrinsic residual stress in top layers of heterostructures arises from lattice mismatches, NL parameters and defect densities in GaN. Hence, efforts to reduce the intrinsic residual stress in current conducting GaN layer give an opportunity to further improve the electrical characteristics of AlGaN/GaN device structures on Si.

  16. GaAsSb-based heterojunction tunnel diodes for tandem solar cell interconnects

    SciTech Connect (OSTI)

    Zolper, J.C.; Klem, J.F.; Plut, T.A.; Tigges, C.P.

    1995-01-01T23:59:59.000Z

    We report a new approach to tunnel junctions that employs a pseudomorphic GaAsSb layer to obtain a band alignment at a InGaAs or InAlAs p-n junction favorable for forward bias tunneling. Since the majority of the band offset between GaAsSb and InGaAs or InAlAs is in the valence band, when an GaAsSb layer is placed at an InGaAs or InAlAs p-n junction the tunneling distance is reduced and the tunneling current is increased. For all doping levels studied, the presence of the GaAsSb-layer enhanced the forward tunneling characteristics. In fact, in a InGaAs/GaAsSb tunnel diode a peak tunneling current sufficient for a 1000 sun intercell interconnect was achieved with p = 1.5{times}l0{sup 18} cm{sup -3} while a similarly doped all-InGaAs diode was rectifying. This approach affords a new degree of freedom in designing tunnel junctions for tandem solar cell interconnects. Previously only doping levels could be varied to control the tunneling properties. Our approach relaxes the doping requirements by employing a GaAsSb-based heterojunction.

  17. Improved oxidation sulfidation resistance of Fe-Cr-Ni alloys

    DOE Patents [OSTI]

    Natesan, K.; Baxter, D.J.

    1983-07-26T23:59:59.000Z

    High temperature resistance of Fe-Cr-Ni alloy compositions to oxidative and/or sulfidative conditions is provided by the incorporation of about 1 to 8 wt % of Zr or Nb and results in a two-phase composition having an alloy matrix as the first phase and a fine grained intermetallic composition as the second phase. The presence and location of the intermetallic composition between grains of the matrix provides mechanical strength, enhanced surface scale adhesion, and resistance to corrosive attack between grains of the alloy matrix at temperatures of 500 to 1000/sup 0/C.

  18. Oxidation sulfidation resistance of Fe-Cr-Ni alloys

    DOE Patents [OSTI]

    Natesan, Ken (Naperville, IL); Baxter, David J. (Woodridge, IL)

    1984-01-01T23:59:59.000Z

    High temperature resistance of Fe-Cr-Ni alloy compositions to oxidative and/or sulfidative conditions is provided by the incorporation of about 1-8 wt. % of Zr or Nb and results in a two-phase composition having an alloy matrix as the first phase and a fine grained intermetallic composition as the second phase. The presence and location of the intermetallic composition between grains of the matrix provides mechanical strength, enhanced surface scale adhesion, and resistance to corrosive attack between grains of the alloy matrix at temperatures of 500.degree.-1000.degree. C.

  19. Stable atomic structure of NiTi austenite

    SciTech Connect (OSTI)

    Zarkevich, Nikolai A [Ames Laboratory; Johnson, Duane D [Ames Laboratory

    2014-08-01T23:59:59.000Z

    Nitinol (NiTi), the most widely used shape-memory alloy, exhibits an austenite phase that has yet to be identified. The usually assumed austenitic structure is cubic B2, which has imaginary phonon modes, hence it is unstable. We suggest a stable austenitic structure that “on average” has B2 symmetry (observed by x-ray and neutron diffraction), but it exhibits finite atomic displacements from the ideal B2 sites. The proposed structure has a phonon spectrum that agrees with that from neutron scattering, has diffraction spectra in agreement with x-ray diffraction, and has an energy relative to the ground state that agrees with calorimetry data.

  20. INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS

    E-Print Network [OSTI]

    Atwater, Harry

    INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

  1. Metal-insulator-semiconductor structures on p-type GaAs with low interface state density

    E-Print Network [OSTI]

    Chen, Zhi

    Metal-insulator-semiconductor structures on p-type GaAs with low interface state density Zhi Chen properties of in situ deposited Si3N4 /Si/p-GaAs metal-insulator-semiconductor structures have been offered by a low gate leakage technology in GaAs, such as metal insulator structures, func- tional Ga

  2. Process and properties of electroless Ni-Cu-P-ZrO{sub 2} nanocomposite coatings

    SciTech Connect (OSTI)

    Ranganatha, S. [Department of Studies in Chemistry, School of Chemical Sciences, Kuvempu University, Shankaraghatta 577451, Shimoga, Karnataka (India)] [Department of Studies in Chemistry, School of Chemical Sciences, Kuvempu University, Shankaraghatta 577451, Shimoga, Karnataka (India); Venkatesha, T.V., E-mail: drtvvenkatesha@yahoo.co.uk [Department of Studies in Chemistry, School of Chemical Sciences, Kuvempu University, Shankaraghatta 577451, Shimoga, Karnataka (India); Vathsala, K. [Nanotribology Laboratory, Mechanical engineering department, Indian Institute of Science, Bangalore (India)] [Nanotribology Laboratory, Mechanical engineering department, Indian Institute of Science, Bangalore (India)

    2012-03-15T23:59:59.000Z

    Highlights: Black-Right-Pointing-Pointer The Ni-P and Ni-P-Cu-ZrO{sub 2} coatings were produced by electroless technique. Black-Right-Pointing-Pointer The influence of copper and ZrO{sub 2} nanoparticles on Ni-P was studied. Black-Right-Pointing-Pointer Surface morphology, structure and electrochemical behavior were evaluated. Black-Right-Pointing-Pointer The Ni-Cu-P-ZrO{sub 2} and Ni-P-ZrO{sub 2} coatings are more resistant to corrosion than Ni-P. Black-Right-Pointing-Pointer Introduction of Cu and ZrO{sub 2} in the matrix aids to the enhancement of microhardness. -- Abstract: Electroless Ni-Cu-P-ZrO{sub 2} composite coating was successfully obtained on low carbon steel matrix by electroless plating technique. Coatings with different compositions were obtained by varying copper as ternary metal and nano sized zirconium oxide particles so as to obtain elevated corrosion resistant Ni-P coating. Microstructure, crystal structure and composition of deposits were analyzed by SEM, EDX and XRD techniques. The corrosion behavior of the deposits was studied by anodic polarization, Tafel plots and electrochemical impedance spectroscopy (EIS) in 3.5% sodium chloride solution. The ZrO{sub 2} incorporated Ni-P coating showed higher corrosion resistance than plain Ni-P. The introduction of copper metal into Ni-P-ZrO{sub 2} enhanced the protection ability against corrosion. The influence of copper metal and nanoparticles on microhardness of coatings was evaluated.

  3. Method of plasma etching Ga-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25T23:59:59.000Z

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  4. Method of plasma etching GA-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2013-01-01T23:59:59.000Z

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

  5. Oxygen-induced changes in electron-energy-loss spectra for Al, Be and Ni. [Al; Be; Ni

    SciTech Connect (OSTI)

    Madden, H.H.; Landers, R.; Kleiman, G.G. (Instituto de Fisica Gleb Wataghin, Universidade Estadual de Campinas (UNICAMP), 13081-970 Campinas, Sao Paulo, Brasil); Zehner, D.M. (Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830 (United States))

    1999-09-01T23:59:59.000Z

    Electron-energy-loss spectroscopy (EELS) data are presented to illustrate line shape changes that occur as a result of oxygen interaction with metal surfaces. The metals were aluminum, beryllium and nickel. Core-level EELS data were taken for excitations from Al(2p), Be(1s), Ni(3p/3s) and O(1s) levels to the conduction band (CB) density of states (DOS) of the materials. The primary beam energies for the spectra were 300, 450, 300, and 1135 eV, respectively. The data are presented in both the (as measured) first-derivative and the integral forms. The integral spectra were corrected for coherent background losses and analyzed for CB DOS information. These spectra were found to be in qualitative agreement with published experimental and theoretical studies of these materials. One peak in the spectra for Al oxide is analyzed for its correlation with excitonic screening of the Al(2p) core hole. Similar evidence for exciton formation is found in the Ni(3p) spectra for Ni oxide. Data are also presented showing oxygen-induced changes in the lower-loss-energy EELS curves that, in the pure metal, are dominated by plasmon-loss and interband-transition signals. Single-scattering loss profiles in the integral form of the data were calculated using a procedure of Tougaard and Chorkendorff [S. Tougaard and I. Chorkendorff, Phys. Rev. B. [bold 35], 6570 (1987)]. For all three oxides these profiles are dominated by a feature with a loss energy of around 20[endash]25 eV. Although this feature has been ascribed by other researchers as due to bulk plasmon losses in the oxide, an alternative explanation is that the feature is simply due to O(2s)-to-CB-level excitations. An even stronger feature is found at 7 eV loss energy for Ni oxide. Speculation is given as to its source. The line shapes in both the core-level and noncore-level spectra can also be used simply as [open quotes]fingerprints[close quotes] of the surface chemistry of the materials. Our data were taken using commercially available surface analysis equipment and serve to complement surface information provided by Auger electron and/or x-ray photoelectron spectroscopy. [copyright] [ital 1999 American Vacuum Society.

  6. TSNo s02-roberts104537-O Microscopic and Spectroscopic Speciation of Ni in Soils in the Vicinity of a Ni Refinery.

    E-Print Network [OSTI]

    Sparks, Donald L.

    in the Vicinity of a Ni Refinery. abstract Accurately predicting the fate and bioavailability of metals in smelter REFINERY ASA-CSSA-SSSA Annual Meetings - October 21 - 25, 2001 - Charlotte, NC #12;

  7. Self-assembly of Ni nanocrystals on HfO{sub 2} and N-assisted Ni confinement for nonvolatile memory application

    SciTech Connect (OSTI)

    Tan, Zerlinda; Samanta, S.K.; Yoo, Won Jong; Lee, Sungjoo [Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)

    2005-01-03T23:59:59.000Z

    We demonstrate memory property using Ni nanocrystals with mean diameter of 9 nm embedded in HfO{sub 2} high-k dielectric that are formed via a self-assembly process by sputtering and rapid thermal annealing. X-ray photoelectron spectroscopy shows that Ni penetrates into the 5 nm HfO{sub 2} after high temperature annealing above 800 deg. C in N{sub 2}. However, the diffusion is suppressed by N incorporation into HfO{sub 2} by NH{sub 3} annealing. Metal-oxide-semiconductor structures were fabricated with Ni nanocrystals embedded in HfO{sub 2}. An additional counterclockwise hysteresis of 2.1 V due to the charge trapping properties of the Ni nanocrystals was observed from a {+-}5 V sweep during capacitance-voltage electrical measurement.

  8. Dynamical deformation effects in subbarrier fusion of {sup 64}Ni+{sup 132}Sn

    SciTech Connect (OSTI)

    Umar, A. S.; Oberacker, V. E. [Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States)

    2006-12-15T23:59:59.000Z

    We show that dynamical deformation effects play an important role in fusion reactions involving the {sup 64}Ni nucleus, in particular the {sup 64}Ni+{sup 132}Sn system. We calculate fully microscopic interaction potentials and the corresponding subbarrier fusion cross-sections.

  9. Liquid metal feeding through dendritic region in Ni-Hard white iron

    SciTech Connect (OSTI)

    Oryshchyn, Danylo B.; Dogan, Omer N.

    2005-01-01T23:59:59.000Z

    Liquid permeability in the dendritic regions is one of the factors that determine porosity formation and macro segregation in castings. Permeability in the dendritic structure of Ni-Hard white iron was measured as a function of temperature. Effect of microstructural coarsening on the permeability was also investigated. Permeability increased with coarsening dendritic structure in Ni-Hard white iron.

  10. Microstructural Evolution Model of the Sintering Behavior and Magnetic Properties of NiZn Ferrite Nanoparticles

    E-Print Network [OSTI]

    McHenry, Michael E.

    Microstructural Evolution Model of the Sintering Behavior and Magnetic Properties of NiZn Ferrite jlwoods@andrew.cmu.edu, c SCalvin@slc.edu, d jhuth@Spang.co, e mm7g@andrew.cmu.edu Keywords: Ferrite, nanoparticle, sintering, microstructure. Abstract. The sintering of RF plasma synthesized NiZn ferrite

  11. Ni-dispersed fullerenes: Hydrogen storage and desorption properties Weon Ho Shin and Seong Ho Yang

    E-Print Network [OSTI]

    Goddard III, William A.

    Ni-dispersed fullerenes: Hydrogen storage and desorption properties Weon Ho Shin and Seong Ho Yang could be viable alternatives to reversible hydrogen storage. It is demonstrated that a single Ni coated-dispersed fullerenes are considered to be the novel hydrogen storage media capable of storing 6.8 wt % H2, thus

  12. LES EXCITATIONS 1 TROU -1 PARTICULE DANS LES NOYAUX 58Ni et 56Co

    E-Print Network [OSTI]

    Boyer, Edmond

    in 58Ni and 56Co using shell model technics and SDI potential. Nuclear levels and reduced transition for levels at low energies in 58Ni and 56Co, 1p-1h excitations do not however improve greatly earlier results couche f7/2) et qu'en outre les energies individuelles sont insuffisamment connues. D'autres travaux [3

  13. Method For Making Electronic Circuits Having Nial And Ni3al Substrates

    DOE Patents [OSTI]

    Deevi, Seetharama C. (Midlothian, VA); Sikka, Vinod K. (Oak Ridge, TN)

    2001-01-30T23:59:59.000Z

    A method for making electronic circuit component having improved mechanical properties and thermal conductivity comprises steps of providing NiAl and/or Ni.sub.3 Al, and forming an alumina layer thereupon prior to applying the conductive elements. Additional layers of copper-aluminum alloy or copper further improve mechanical strength and thermal conductivity.

  14. Glass Forming Ability in Pr-(Cu, Ni)-Al Alloys

    E-Print Network [OSTI]

    Zhang, Yong

    Glass forming ability (GFA) in the Pr-rich Pr-(Cu, Ni)-Al alloys at or near the eutectic points was systematically studied. It was found that the GFA in the pseudo-ternary alloys of Pr-(Cu, Ni)-Al is higher than that of ...

  15. Microstructural Degradation of Ni-YSZ Anodes for Solid Oxide Fuel

    E-Print Network [OSTI]

    Microstructural Degradation of Ni- YSZ Anodes for Solid Oxide Fuel Cells Karl Thydén Risø-PhD-32(EN 2008 #12;Author: Karl Thydén Title: Microstructural Degradation of Ni-YSZ Anodes for Solid Oxide Fuel Cells Department: Fuel Cells and Solid State Chemistry Department Risø-PhD-32(EN) March 2008 This thesis

  16. UNCORRECTEDPROOF 2 Compression behavior of porous NiTi shape memory alloy

    E-Print Network [OSTI]

    Taya, Minoru

    Ti by self-propagating 41high temperature synthesis (SHS), and again the porous 42NiTi fabricated. The compression behavior of the 11 porous NiTi was examined with the aim of using it possibly as a high energy for possible application 30 in medical implant devices and as high energy absorp- 31 tion structural material

  17. Intermixing criteria for reaction synthesis of Ni/Al multilayered microfoils

    E-Print Network [OSTI]

    Hong, Soon Hyung

    synthesis technique for intermetallics involves both a self-propagating high-temperature synthe- sis (SHSIntermixing criteria for reaction synthesis of Ni/Al multilayered microfoils Hee Y. Kim a , Dong S are proposed for determining the microstructure of the reaction products during the reaction synthesis of Ni

  18. A Novel Electrodeposition Process for Plating Zn-Ni-Cd Alloys Hansung Kim,a,

    E-Print Network [OSTI]

    Popov, Branko N.

    A Novel Electrodeposition Process for Plating Zn-Ni-Cd Alloys Hansung Kim,a, * Branko N. Popov Sciences Center, Albuquerque, New Mexico 87185-0834, USA Zn-Ni-Cd alloy was electrodeposited from in the literature.7-9 Typical nickel composition in the alloy is approximately 10%, and any further increase

  19. Oxygen driven reconstruction dynamics of Ni,,977... measured by time-lapse scanning tunneling microscopy

    E-Print Network [OSTI]

    Sibener, Steven

    Oxygen driven reconstruction dynamics of Ni,,977... measured by time-lapse scanning tunneling-lapse scanning tunneling microscopy STM has been used to observe the oxygen induced reconstruction behavior of Ni for the merging of steps in the presence of small amounts of adsorbed oxygen, less than 2% of a monolayer. Point

  20. Biomaterials 24 (2003) 39313939 Corrosion and wear-corrosion behavior of NiTi modified

    E-Print Network [OSTI]

    Crone, Wendy C.

    Biomaterials 24 (2003) 3931­3939 Corrosion and wear-corrosion behavior of NiTi modified by plasma Received 10 November 2002; accepted 8 April 2003 Abstract The understanding of corrosion behavior in NiTi such as corrosion resistance, plasma source ion implantation (PSII) technique was employed with oxygen as incident

  1. Thermomechanical Characterization of a TiPdNi High Temperature SMA under Tension

    E-Print Network [OSTI]

    Thermomechanical Characterization of a TiPdNi High Temperature SMA under Tension Parikshith K issues, a nominal composition of Ti50Pd40Ni10 HTSMA was used. The alloy was fabricated using a vacuum arc Electrode Discharge Machining (EDM). A high temperature experimental setup was developed on a load frame

  2. Dehydrogenation of Propane to Propylene over Supported Model NiAu Catalysts

    E-Print Network [OSTI]

    Goodman, Wayne

    Dehydrogenation of Propane to Propylene over Supported Model Ni­Au Catalysts Zhen Yan · Yunxi Yao 2012 � Springer Science+Business Media, LLC 2012 Abstract Hydrogenolysis and dehydrogenation of propane. For the conversionofpropane in the presence of hydrogen, the dehydrogenation of propane to propylene was observed onthe Ni

  3. Study of reflection and transport in the microwave photo-excited GaAs/AlGaAs two dimensional electron system

    SciTech Connect (OSTI)

    Ye, Tianyu; Mani, Ramesh G. [Department of Physics and Astronomy, Georgia State University, Atlanta GA 30303 (United States); Wegscheider, Werner [Laboratorium für Festkörperphysik, ETH Zürich, 8093 Zürich (Switzerland)

    2013-12-04T23:59:59.000Z

    We present the results of a concurrent experimental study of microwave reflection and transport in the GaAs/AlGaAs two dimensional electron gas system and correlate observed features in the reflection with the observed transport features. The experimental results are compared with expectations based on theory.

  4. GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a

    E-Print Network [OSTI]

    Atwater, Harry

    GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C Richard R. King,2 and Harry A. Atwater1 1 California Institute of Technology, Pasadena, California 91125, USA 2 Spectrolab, Inc., Sylmar, California 91342, USA 3 Aonex Technologies, Pasadena, California 91106

  5. FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS

    E-Print Network [OSTI]

    Atwater, Harry

    FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS Robyn C. Law 1 1 Spectrolab, Inc., A Boeing Company, Sylmar, California 91342, USA 2 California Institute of Technology, Pasadena, California 91125, USA ABSTRACT Spectrolab has demonstrated the first lattice matched In

  6. Ga lithography in sputtered niobium for superconductive micro and nanowires

    SciTech Connect (OSTI)

    Henry, M. David; Wolfley, Steve; Monson, Todd; Lewis, Rupert [Sandia National Labs, MESA Facility, P.O. Box 5800, Albuquerque, New Mexico 87185-1084 (United States)

    2014-08-18T23:59:59.000Z

    This work demonstrates the use of focused ion beam (FIB) implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12?nm deep with a 14?nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10??m by 10??m and 100??m by 100??m, demonstrate that doses above than 7.5?×?10{sup 15?}cm{sup ?2} at 30?kV provide adequate mask protection for a 205?nm thick, sputtered Nb film. The resolution of this dry lithographic technique is demonstrated by fabrication of nanowires 75?nm wide by 10??m long connected to 50??m wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature (T{sub c})?=?7.7?K was measured using a magnetic properties measurement system. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.

  7. InGaAsSb thermophotovoltaic diode physics evaluation

    SciTech Connect (OSTI)

    Charache, G.W.; Baldasaro, P.F.; Danielson, L.R. [Lockheed-Martin, Inc., Schenectady, NY (United States)] [and others

    1998-06-01T23:59:59.000Z

    The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1,000 C, which sets an upper limit on the TPV diode bandgap of 0.6 eV from efficiency and power density considerations. This bandgap requirement has necessitated the development of new diode material systems, never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice-matched on GaSb substrates have achieved the highest performance. This report relates observed diode performance to electro-optic properties such as minority carrier lifetime, diffusion length and mobility and provides initial links to microstructural properties. This analysis has bounded potential diode performance improvements. For the 0.52 eV InGaAsSb diodes used in this analysis the measured dark current is 2 {times} 10{sup {minus}5} A/cm{sup 2}, versus a potential Auger limit 1 {times} 10{sup {minus}5} A/cm{sup 2}, a radiative limit of 2 {times} 10{sup {minus}6} A/cm{sup 2} (no photon recycling), and an absolute thermodynamic limit of 1.4 {times} 10{sup {minus}7} A/cm{sup 2}. These dark currents are equivalent to open circuit voltage gains of 20 mV (7%), 60 mV (20%) and 140 mV (45%), respectively.

  8. GaSb substrates with extended IR wavelength for advanced space based applications

    SciTech Connect (OSTI)

    Allen, Lisa P.; Flint, Patrick; Dallas, Gordon; Bakken, Daniel; Blanchat, Kevin; Brown, Gail J.; Vangala, Shivashankar R.; Goodhue, William D.; Krishnaswami, Kannan

    2009-05-01T23:59:59.000Z

    GaSb substrates have advantages that make them attractive for implementation of a wide range of infrared (IR) detectors with higher operating temperatures for stealth and space based applications. A significant aspect that would enable widespread commercial application of GaSb wafers for very long wavelength IR (VLWIR) applications is the capability for transmissivity beyond 15 m. Due largely to the GaSb (antisite) defect and other point defects in undoped GaSb substrates, intrinsic GaSb is still slightly p-type and strongly absorbs in the VLWIR. This requires backside thinning of the GaSb substrate for IR transmissivity. An extremely low n-type GaSb substrate is preferred to eliminate thinning and provide a substrate solution for backside illuminated VLWIR devices. By providing a more homogeneous radial distribution of the melt solute to suppress GaSb formation and controlling the cooling rate, ultra low doped n:GaSb has been achieved. This study examines the surface properties and IR transmission spectra of ultra low doped GaSb substrates at both room and low temperatures. Atomic force microscopy (AFM), homoepitaxy by MBE, and infrared Fourier transform (FTIR) analysis was implemented to examine material quality. As compared with standard low doped GaSb, the ultra low doped substrates show over 50% transmission and consistent wavelength transparency past 23 m with improved %T at low temperature. Homoepitaxy and AFM results indicate the ultra low doped GaSb has a low thermal desorbtion character and qualified morphology. In summary, improvements in room temperature IR transmission and extended wavelength characteristics have been shown consistently for ultra low doped n:GaSb substrates.

  9. Direct synthesis of porous NiO nanowall arrays on conductive substrates for supercapacitor application

    SciTech Connect (OSTI)

    Zhu, Jianhui; Jiang, Jian; Liu, Jingping; Ding, Ruimin; Ding, Hao; Feng, Yamin; Wei, Guangming [Institute of Nanoscience and Nanotechnology, Department of Physics, Huazhong Normal University, 430079 Wu Han (China); Huang, Xintang, E-mail: xthuang@phy.ccnu.edu.c [Institute of Nanoscience and Nanotechnology, Department of Physics, Huazhong Normal University, 430079 Wu Han (China)

    2011-03-15T23:59:59.000Z

    Porous NiO nanowall arrays (NWAs) grown on flexible Fe-Co-Ni alloy have been successfully synthesized by using nullaginite (Ni{sub 2}(OH){sub 2}CO{sub 3}) as precursor and investigated as supercapacitor electrodes. In details, we adopted a simple hydrothermal method to realize Ni{sub 2}(OH){sub 2}CO{sub 3} NWAs and examined their robust mechanical adhesion to substrate via a long-time ultrasonication test. Porous NiO NWAs were then obtained by a post-calcination towards precursors at 500 {sup o}C in nitrogen atmosphere. Electrochemical properties of as-synthesized NiO NWAs were evaluated by cyclic voltammetry and galvanostatic charge/discharge; porous NiO NWAs electrode delivered a specific capacitance of 270 F/g (0.67 A/g); even at high current densities, the electrode could still deliver a high capacitance up to 236 F/g (13.35 A/g). Meanwhile, it exhibited excellent cycle lifetime with {approx}93% specific capacitance kept after 4000 cycles. These results suggest that as-made porous NiO NWAs electrode is a promising candidate for future thin-film supercapacitors and other microelectronic systems. -- Graphical abstract: Porous NiO nanowall arrays (NWAs) grown on alloy substrate have been made using nullaginite as precursor and studied as supercapacitor electrodes. Porous nanowalls interconnected with each other resulting in the formation of extended-network architectures and exhibited excellent capacitor properties. NiO NWAs electrode delivered a capacitance of 270 F/g (0.67 A/g); even at high current density, the electrode could still deliver a high capacitance up to 236 F/g (13.35 A/g). Besides, it exhibited excellent cycle lifetime with {approx}93% capacitance kept after 4000 cycles. These remarkable results made it possible for mass production of NiO NWAs and future thin-film microelectronic applications. Display Omitted Research highlights: {yields} Large-scale nullaginite (Ni{sub 2}(OH){sub 2}CO{sub 3}) nanowall arrays (NWAs) have been synthesized on flexible alloy substrate by a facile hydrothermal method. {yields} Ultrasonication test has been conducted to demonstrate the robust mechanical adhesion between NWAs and substrate. {yields} As supercapacitor electrodes porous NiO NWAs obtained by a post-calcination towards Ni{sub 2}(OH){sub 2}CO{sub 3} precursors have exhibited excellent electrochemical properties.

  10. Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate

    SciTech Connect (OSTI)

    Sun, Wen; Xu, Hongyi [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia)] [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Guo, Yanan [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia) [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia); Gao, Qiang; Hoe Tan, Hark; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia)] [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia); Zou, Jin, E-mail: j.zou@uq.edu.au [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia) [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia QLD 4072 (Australia)

    2013-11-25T23:59:59.000Z

    Simultaneous growth of ?111?{sub B} free-standing and ±[110] lateral GaAsP epitaxial nanowires on GaAs (001) substrates were observed and investigated by electron microscopy and crystallographic analysis. It was found that the growth of both free-standing and lateral ternary nanowires via Au catalysts was driven by the fact that Au catalysts prefer to maintain low-energy (111){sub B} interfaces with surrounding GaAs(P) materials: in the case of free-standing nanowires, Au catalysts maintain (111){sub B} interfaces with their underlying GaAsP nanowires; while in the case of lateral nanowires, each Au catalyst remain their side (111){sub B} interfaces with the surrounding GaAs(P) material during the lateral nanowire growth.

  11. The evolution of texture during annealing of electroless Ni-Co-P deposits

    SciTech Connect (OSTI)

    Lee, D.N.; Hur, K.H.

    1999-05-21T23:59:59.000Z

    The Ni-Co-P alloy deposits can be obtained from alkaline solutions over the entire range of Co compositions. The deposits with higher Co concentrations are applied to magnetic recording media and vertical magnetic recording media by adding Mn and Re. An increase in Co concentration causes a decrease in P content and increase in grain size. No study has been made of texture changes during annealing of the Ni-Co-P alloy deposits. Microstructures and crystallization of the electroless Ni-P deposits and magnetic properties and microstructures of electroless Ni-Cu-P deposits were studied by the present authors. In this paper, the evolution of texture and phase transformation behavior during annealing of the Ni-Co-P deposits have been discussed.

  12. Mass Measurements of Proton-Rich Nuclei Fe-50 and Ni-54

    E-Print Network [OSTI]

    Tribble, Robert E.; Cossairt, J. D.; May, D. P.; Kenefick, R. A.

    1977-01-01T23:59:59.000Z

    , and target thicknesses determined the Q-value scales shown in Fig. 2. The resulting Q values and mass excesses (all in MeV) are Q("Fe) =-50..95+0.06, M(SOFe) =-34.48+0.06 and Q("Ni) = -50.19+0.05, M("Ni) =-39.21 +0.05, with the mass results based on a... Station, Texas 77843 {Received 6 December 1976) The reactions "Fe{'He,'He)' Fe and "Ni{'He,'He)"Ni have been observed at an incident a energy of 110 MeV. The reaction Q values are found to be Q{ Fe) = ?50.95 + 0.06 MeV and Q{' Ni) = ?50.19 + 0.05 Me...

  13. Effect of hydrogenation on magnetic and electronic behaviour of Pr-Ni

    SciTech Connect (OSTI)

    Rana, Pooja, E-mail: poojafizix@yahoo.com; Singh, Sanjay K., E-mail: poojafizix@yahoo.com; Verma, U. P., E-mail: poojafizix@yahoo.com [School of Studies in Physics, Jiwaji University, Gwalior-474011 (India)

    2014-04-24T23:59:59.000Z

    Magnetic and electronic properties of PrNi and PrNi-H have been investigated by using first principles approach. The ground state of both the compounds is base-centered orthorhombic CrB structure. Calculations are performed using full potential linearized augmented plane wave plus local orbitals (FP-L/APW) method including spin-polarization within the frame work of density functional theory (DFT). The electronic exchange-correlation energy is described by generalized gradient approximation (GGA). The hydrogen stored in PrNi, i.e., PrNi-H has been studied to analyze the effective changes in magnetic moments and electronic structures in comparison to PrNi. A comparative study of the density of states in both the compounds has also been presented.

  14. Magnetism of NiMn2O4-Fe3O4 spinel interfaces

    SciTech Connect (OSTI)

    Arenholz, Elke; Nelson-Cheeseman, B. B.; Chopdekar, R. V.; Bettinger, J. S.; Arenholz, E.; Suzuki, Y.

    2007-09-13T23:59:59.000Z

    We investigate the magnetic properties of the isostructural spinel-spinel interface of NiMn{sub 2}O{sub 4}(NMO)-Fe{sub 3}O{sub 4}. Although the magnetic transition temperature of the NMO film is preserved, both bulk and interface sensitive measurements demonstrate that the interface exhibits strong interfacial magnetic coupling up to room temperature. While NMO thin films have a ferrimagnetic transition temperature of 60 K, both NiFe{sub 2}O{sub 4} and MnFe{sub 2}O{sub 4} are ferrimagnetic at room temperature. Our experimental results suggest that these magnetic properties arise from a thin interdiffused region of (Fe,Mn,Ni){sub 3}O{sub 4} at the interface, leading to Mn and Ni magnetic properties similar to those of MnFe{sub 2}O{sub 4} and NiFe{sub 2}O{sub 4}.

  15. Eutectic bonding of a Ti sputter coated, carbon aerogel wafer to a Ni foil

    SciTech Connect (OSTI)

    Jankowski, A.F.; Hayes, J.P.; Kanna, R.L.

    1994-06-01T23:59:59.000Z

    The formation of high energy density, storage devices is achievable using composite material systems. Alternate layering of carbon aerogel wafers and Ni foils with rnicroporous separators is a prospective composite for capacitor applications. An inherent problem exists to form a physical bond between Ni and the porous carbon wafer. The bonding process must be limited to temperatures less than 1000{degrees}C, at which point the aerogel begins to degrade. The advantage of a low temperature eutectic in the Ni-Ti alloy system solves this problem. Ti, a carbide former, is readily adherent as a sputter deposited thin film onto the carbon wafer. A vacuum bonding process is then used to join the Ni foil and Ti coating through eutectic phase formation. The parameters required for successfld bonding are described along with a structural characterization of the Ni foil-carbon aerogel wafer interface.

  16. Electrically induced insulator to metal transition in epitaxial SmNiO{sub 3} thin films

    SciTech Connect (OSTI)

    Shukla, Nikhil, E-mail: nss152@psu.edu; Dasgupta, Sandeepan; Datta, Suman [Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Joshi, Toyanath; Borisov, Pavel; Lederman, David [Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506-6315 (United States)

    2014-07-07T23:59:59.000Z

    We report on the electrically induced insulator to metal transition (IMT) in SmNiO{sub 3} thin films grown on (001) LaAlO{sub 3} by pulsed laser deposition. The behavior of the resistivity as a function of temperature suggests that the primary transport mechanism in the SmNiO{sub 3} insulating state is dominated by Efros-Shklovskii variable range hopping (ES-VRH). Additionally, the magnetic transition in the insulating state of SmNiO{sub 3} modifies the characteristics of the ES-VRH transport. Systematic DC and pulsed current-voltage measurements indicate that current-induced joule heating is the fundamental mechanism driving the electrically induced IMT in SmNiO{sub 3}. These transport properties are explained in context of the IMT in SmNiO{sub 3} being related to the strong electron-lattice coupling.

  17. Hydrothermal synthesis and electrochemical performance of NiO microspheres with different nanoscale building blocks

    SciTech Connect (OSTI)

    Wang Ling; Hao Yanjing; Zhao Yan [College of Chemistry, Sichuan University, Chengdu 610064 (China); Lai Qiongyu, E-mail: laiqy5@hotmail.co [College of Chemistry, Sichuan University, Chengdu 610064 (China); Xu Xiaoyun [College of Chemistry, Sichuan University, Chengdu 610064 (China)

    2010-11-15T23:59:59.000Z

    NiO microspheres were successfully obtained by calcining the Ni(OH){sub 2} precursor, which were synthesized via the hydrothermal reaction of nickel chloride, glucose and ammonia. The products were characterized by TGA, XRD and SEM. The influences of glucose and reaction temperature on the morphologies of NiO samples were investigated. Moreover, the possible growth mechanism for the spherical morphology was proposed. The charge/discharge test showed that the as-prepared NiO microspheres composed of nanoparticles can serve as an ideal electrode material for supercapacitor due to the spherical hollow structure. -- Graphical Abstract: Fig. 5 is the SEM image of NiO that was prepared in the different hydrothermal reaction temperatures. It showed that reaction temperature played a crucial role for the morphology of products.

  18. Fabrication of NiO thin film electrode for supercapacitor applications

    SciTech Connect (OSTI)

    Mali, V. V.; Navale, S. T.; Chougule, M. A.; Khuspe, G. D.; Godse, P. R.; Patil, V. B., E-mail: drvbpatil@gmail.com [Functional Materials Research Laboratory, School of Physical Sciences, Solapur University, Solapur-413255 (India); Pawar, S. A. [Department of Electronics, Shri Shivaji Mahavidhyala, Barshi, Solapur-413411 (India)

    2014-04-24T23:59:59.000Z

    Nanocrystalline NiO electrode is successfully electrosynthesized for supercapacitor application. The nanocrystalline NiO electrode is characterized using scanning electron microscope (SEM). Nickel oxide is a highly porous and the film surface looked smooth and composed of fine elongated particles. The supercapacitive performance of NiO electrode is tested using cyclic voltammetry (C-V) technique in 0.5M Na{sub 2}S{sub 2}O{sub 3} electrolyte within potential range of ?1.2 to +1.2 V. The effect of scan rate on the capacitance of NiO electrode is studied. The highest specific capacitance of 439 Fg{sup ?1} at the voltage scan rate of 50mVs{sup ?1} is achieved. Additionally stability and charging–discharging of NiO electrode are studied.

  19. Solution deposited NiO thin-films as hole transport layers in organic photovoltaics

    SciTech Connect (OSTI)

    Steirer, K. Xerxes [Colorado School of Mines, Golden, CO (United States); Chesin, Jordan P. [Division of Engineering, Brown Univ., Providence, RI (United States); Widjonarko, N. Edwin [University of Colorado, Dept of Physics, Boulder, CO (United States); Berry, Joseph J. [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Miedaner, Alexander [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Ginley, David S. [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Olson, Dana C. [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2010-01-01T23:59:59.000Z

    Organic solar cells require suitable anode surface modifiers in order to selectively collect positive charge carriers and improve device performance. We employ a nickel metal organic ink precursor to fabricate NiO hole transport layers on indium tin oxide anodes. This solution deposited NiO annealed at 250 °C and plasma treated, achieves similar OPV device results reported with NiO films from PLD as well as PEDOT:PSS. We demonstrate a tunable work function by post-processing the NiO with an O{sub 2}-plasma surface treatment of varied power and time. We find that plasma treatment is necessary for optimal device performance. Optimal devices utilizing a solution deposited NiO hole transport layer show lower series resistance and increased fill factor when compared to solar cells with PEDOT:PSS.

  20. Theoretical comparison of multiple quantum wells and thick-layer designs in InGaN/GaN solar cells

    SciTech Connect (OSTI)

    Cavassilas, Nicolas; Michelini, Fabienne; Bescond, Marc [Aix Marseille Univ, CNRS, IM2NP UMR 7334, 13384 Marseille (France)

    2014-08-11T23:59:59.000Z

    This theoretical work analyzes the photovoltaic effect in non-polar InGaN/GaN solar cells. Our electronic transport model considers quantum behaviors related to confinement, tunneling, electron-phonon, and electron-photon scatterings. Based on this model, we compare a multiple quantum wells cell with its thick-layer counterpart. We show that the structure of multiple quantum wells is a promising design providing better compromise between photon-absorption and electronic transport. This balance is necessary since these two phenomena are shown to be antagonist in nanostructure based solar cells. In these devices, we also show that phonon absorption increases the short-circuit current, while phonon emission reduces the open-circuit voltage.

  1. Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Dai, Qi; Shan, Qifeng; Wang, Jing; Chhajed, Sameer; Cho, Jaehee; Schubert, E. Fred; Crawford, Mary H.; Koleske, Daniel D.; Kim, Min-Ho; Park, Yongjo

    2010-01-01T23:59:59.000Z

    We model the carrier recombination mechanisms in GaInN/GaN light-emitting diodes as R=An+Bn{sup 2} +Cn{sup 3} +f(n) , where f(n) represents carrier leakage out of the active region. The term f(n) is expanded into a power series and shown to have higher-than-third-order contributions to the recombination. The total third-order nonradiative coefficient (which may include an f(n) leakage contribution and an Auger contribution) is found to be 8×10{sup ?29} ?cm{sup 6} ?s{sup ?1} . Comparison of the theoretical ABC+f(n) model with experimental data shows that a good fit requires the inclusion of the f(n) term.

  2. Carrier-induced change in refractive index of InP, GaAs, and InGaAsP

    SciTech Connect (OSTI)

    Bennett, B.R. (Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA (US)); Soref, R.A. (Solid State Sciences Directorate, Rome Air Development Center, Hanscom Air Force Base, Bedford, MA (US)); Del Alamo, J.A. (Dept. of Electrical Engineering and Computer Science, Massachussets Institute of Technology, Cambridge, MA (US))

    1990-01-01T23:59:59.000Z

    The authors have theoretically estimated the change in refractive index {Delta}{ital n} produced by injection of free carriers in InP, GaAs, and InGaAsP. Bandfilling (Burstein-Moss effect), band-gap shrinkage, and free-carrier absorption (plasma effect) were included. Carrier concentrations of 10{sup 16}/cm{sup 3} to 10{sup 19}/cm{sup 3} and photon energies of 0.8 to 2.0 eV were considered. Predictions of {Delta}{ital n} are in reasonably good agreement with the limited experimental data available. Refractive index changes as large as 10{sup {minus} 2} are predicted for carrier concentrations of 10{sup 18}/cm{sup 3}, suggesting that low-loss optical phase modulators and switches using carrier injection are feasible in these materials.

  3. Sensitivity of absorption spectra to surface segregation in InGaN/GaN quantum well structures

    SciTech Connect (OSTI)

    Klymenko, M. V.; Shulika, O. V. [Lab. Photonics, Kharkov National University of Radio Electronics, Kharkov, 61166 (Ukraine); Sukhoivanov, I. A. [Department of Electronics, Engineering Division, University of Guanajuato, Salamanca, Guanajuato, 36885 (Mexico)

    2014-05-15T23:59:59.000Z

    We investigate the influence of the indium surface segregation on absorption spectra in InGaN/GaN quantum well structures having different indium amount. Results of the mathematical modeling show that such influence is more pronounced in quantum well structures with high indium amounts. The origin of this effect is related to the interplay between the indium surface segregation and internal electrostatic fields. Our theoretical analysis is performed using semiconductor Bloch equations within the Hartree-Fock approximation including into consideration excitonic effects. Results of the global sensitivity analysis evidence that the influence of the indium surface segregation is less than one order of magnitude in comparison with the impact of the quantum-well width and indium molar fraction. Also, the influence of the indium surface segregation is not the same for each interface of the quantum well.

  4. Monolithic phosphor-free InGaN/GaN quantum dot wavelength converter white light emitting diodes

    SciTech Connect (OSTI)

    Jahangir, Shafat; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States); Pietzonka, Ines; Strassburg, Martin [OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, Regensburg (Germany)

    2014-09-15T23:59:59.000Z

    We report the characteristics of phosphor-free self-organized InGaN/GaN quantum dot wavelength converter white light emitting diodes grown by plasma assisted molecular beam epitaxy. The exciting quantum dots, in which electrically injected carriers recombine, are blue-emitting and the converter dots are red-emitting. We have studied the effect of tuning the number of dot layers and the peak emission wavelength of the exciting and converter dots on the nature of the emitted white light, in terms of the chromaticity coordinates and correlated color temperature. Depending on the values of these wavelengths, color temperatures in the range of 4420–6700?K have been derived at a current density of 45?A/cm{sup 2} across multiple devices. The variation of the color temperature with change in injection current is found to be very small.

  5. ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures

    SciTech Connect (OSTI)

    Genest, Jonathan; Beal, Romain; Aimez, Vincent; Dubowski, Jan J. [Department of Electrical and Computer Engineering, Center of Excellence for Information Engineering, Universite de Sherbrooke, Sherbrooke, Quebec J1K 2R1 (Canada)

    2008-08-18T23:59:59.000Z

    Radiation from a 193 nm ArF laser was investigated to modify surface properties of InGaAs/InGaAsP quantum well (QW) heterostructures and introduce defects required to enhance intermixing during the annealing process. A top 200 nm thick sacrificial layer of InP served as a reservoir for laser generated defects. The irradiation with up to 90 pulses at 65-150 mJ/cm{sup 2} allowed to generate an array of 1.2x1 mm{sup 2} sites of QW intermixed material, with bandgap energy blueshifted up to 107 nm. We discuss the mechanism and advantages of this approach for postgrowth wafer level fabrication of multibandgap QW material.

  6. X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure

    SciTech Connect (OSTI)

    Strelchuk, V. V., E-mail: Strelch@isp.kiev.ua; Kladko, V. P.; Avramenko, E. A.; Kolomys, O. F.; Safryuk, N. V.; Konakova, R. V. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine); Yavich, B. S., E-mail: byavich@soptel.ru [ZAO Svetlana-Optoelectronics (Russian Federation); Valakh, M. Ya.; Machulin, V. F.; Belyaev, A. E. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)

    2010-09-15T23:59:59.000Z

    High-resolution X-ray diffraction analysis and scanning confocal Raman spectroscopy are used to study the spatial distribution of strains in the In{sub x}Ga{sub 1-x}N/GaN layers and structural quality of these layers in a multilayered light-emitting diode structure produced by metal-organic chemical vapor deposition onto (0001)-oriented sapphire substrates. It is shown that elastic strains almost completely relax at the heterointerface between the thick GaN buffer layer and In{sub x}Ga{sub 1-x}N/GaN buffer superlattice. It is established that the GaN layers in the superlattice are in a stretched state, whereas the alloy layers are in a compressed state. In magnitude, the stretching strains in the GaN layers are lower than the compressive strains in the InGaN layers. It is shown that, as compared to the buffer layers, the layers of the superlattice contain a smaller number of dislocations and the distribution of dislocations is more randomly disordered. In micro-Raman studies on scanning through the thickness of the multilayered structure, direct evidence is obtained for the asymmetric gradient distributions of strains and crystal imperfections of the epitaxial nitride layers along the direction of growth. It is shown that the emission intensity of the In{sub x}Ga{sub 1-x}N quantum well is considerably (more than 30 times) higher than the emission intensity of the GaN barrier layers, suggesting the high efficiency of trapping of charge carriers by the quantum well.

  7. Microstructure and thermal conductivity of surfactant-free NiO nanostructures

    SciTech Connect (OSTI)

    Sahoo, Pranati [Laboratory for Emerging Energy and Electronic Materials, Materials Science and Engineering Department, University of Michigan, Ann Arbor, MI 48109 (United States); Department of Chemistry, University of New Orleans, New Orleans, LA 70148 (United States); Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148 (United States); Misra, Dinesh K. [The Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148 (United States); Salvador, Jim [Chemical Sciences and Materials Systems Laboratory, General Motors R and D Center, Warren, MI 48090 (United States); Makongo, Julien P.A. [Laboratory for Emerging Energy and Electronic Materials, Materials Science and Engineering Department, University of Michigan, Ann Arbor, MI 48109 (United States); Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148 (United States); Chaubey, Girija S. [Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148 (United States); Takas, Nathan J. [Laboratory for Emerging Energy and Electronic Materials, Materials Science and Engineering Department, University of Michigan, Ann Arbor, MI 48109 (United States); Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148 (United States); Wiley, John B. [Department of Chemistry, University of New Orleans, New Orleans, LA 70148 (United States); Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148 (United States); Poudeu, Pierre F.P., E-mail: ppoudeup@umich.edu [Laboratory for Emerging Energy and Electronic Materials, Materials Science and Engineering Department, University of Michigan, Ann Arbor, MI 48109 (United States); Department of Chemistry, University of New Orleans, New Orleans, LA 70148 (United States); Advanced Materials Research Institute, University of New Orleans, New Orleans, LA 70148 (United States)

    2012-06-15T23:59:59.000Z

    High purity, nanometer sized surfactant-free nickel oxide (NiO) particles were produced in gram scale using a solution combustion method and characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), gas pycnometry and gas adsorption analysis (BET). The average particle size of the as-synthesized NiO increases significantly with the preheating temperature of the furnace, while the specific surface area decreases. A BET specific surface area of {approx}100 m{sup 2}/g was obtained for NiO nanoparticles with size as small as 3 nm synthesized at 300 Degree-Sign C. The thermal conductivity ({kappa}) of pressed pellets of the synthesized NiO nanoparticles obtained using spark plasma sintering (SPS) and uniaxial hot pressing is drastically decreased ({approx}60%) compared to that of NiO single crystal. This strong reduction in {kappa} with particle size suggests the suitability of the synthesized surfactant-free NiO nanoparticles for use as nanoinclusions when designing high performance materials for waste heat recovery. - Graphical abstract: Highly efficient phonon scattering by surfactant-free NiO nanostructures obtained by solution combustion of a mixture of nickel (II) nitrate hexahydrate (oxidizer) and urea (fuel) at various temperatures. Highlights: Black-Right-Pointing-Pointer Fast synthesis of surfactant-free NiO nanoparticles with controllable size. Black-Right-Pointing-Pointer High specific surface area for NiO nanoparticles with size range from 3 to 7 nm. Black-Right-Pointing-Pointer Strong reduction of the thermal conductivity with decreasing particle size. Black-Right-Pointing-Pointer NiO as nanoinclusions in high performance materials for energy conversion.

  8. Development of FeNiMoB thin film materials for microfabricated magnetoelastic sensors

    SciTech Connect (OSTI)

    Liang Cai; Gooneratne, Chinthaka; Cha, Dongkyu; Chen Long; Kosel, Jurgen [Computer Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology, 4700 KAUST, Thuwal 23955 (Saudi Arabia); Gianchandani, Yogesh [Department of Electrical Engineering and Computer Science, 1301 Beal Ave., University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2012-12-01T23:59:59.000Z

    Metglas{sup TM} 2826MB foils of 25-30 {mu}m thickness with the composition of Fe{sub 40}Ni{sub 38}Mo{sub 4}B{sub 18} have been used for magnetoelastic sensors in various applications over many years. This work is directed at the investigation of {approx}3 {mu}m thick iron-nickel-molybdenum-boron (FeNiMoB) thin films that are intended for integrated microsystems. The films are deposited on Si substrate by co-sputtering of iron-nickel (FeNi), molybdenum (Mo), and boron (B) targets. The results show that dopants of Mo and B can significantly change the microstructure and magnetic properties of FeNi materials. When FeNi is doped with only Mo its crystal structure changes from polycrystalline to amorphous with the increase of dopant concentration; the transition point is found at about 10 at. % of Mo content. A significant change in anisotropic magnetic properties of FeNi is also observed as the Mo dopant level increases. The coercivity of FeNi films doped with Mo decreases to a value less than one third of the value without dopant. Doping the FeNi with B together with Mo considerably decreases the value of coercivity and the out-of-plane magnetic anisotropy properties, and it also greatly changes the microstructure of the material. In addition, doping B to FeNiMo remarkably reduces the remanence of the material. The film material that is fabricated using an optimized process is magnetically as soft as amorphous Metglas{sup TM} 2826MB with a coercivity of less than 40 Am{sup -1}. The findings of this study provide us a better understanding of the effects of the compositions and microstructure of FeNiMoB thin film materials on their magnetic properties.

  9. Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors

    SciTech Connect (OSTI)

    MONIER,C.; PEARTON,S.J.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-03-10T23:59:59.000Z

    A drift-diffusion transport model has been used to examine the performance capabilities of AlGaN/GaN Npn heterojunction bipolar transistors (HBTs). The Gummel plot from the first GaN-based HBT structure recently demonstrated is adjusted with simulation by using experimental mobility and lifetime reported in the literature. Numerical results have been explored to study the effect of the p-type Mg doping and its incomplete ionization in the base. The high base resistance induced by the deep acceptor level is found to be the cause of limiting current gain values. Increasing the operating temperature of the device activates more carriers in the base. An improvement of the simulated current gain by a factor of 2 to 4 between 25 and 300 C agrees well with the reported experimental results. A preliminary analysis of high frequency characteristics indicates substantial progress of predicted rf performances by operating the device at higher temperature due to a reduced extrinsic base resistivity.

  10. Deep Levels in p-Type InGaAsN Lattice Matched to GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Jones, E.D.; Kaplar, R.J.; Kurtz, S.R.; Kwon, D.; Ringel, S.A.

    1999-03-02T23:59:59.000Z

    Deep level transient spectroscopy (DLTS) measurements were utilized to investigate deep level defects in metal-organic chemical deposition (MOCVD)-grown unintentionally doped p-type InGaAsN films lattice matched to GaAs. The as-grown material displayed a high concentration of deep levels distributed within the bandgap, with a dominant hole trap at E{sub v} + 0.10 eV. Post-growth annealing simplified the deep level spectra, enabling the identification of three distinct hole traps at 0.10 eV, 0.23 eV, and 0.48 eV above the valence band edge, with concentrations of 3.5 x 10{sup 14} cm{sup {minus}3}, 3.8 x 10{sup 14} cm{sup {minus}3}, and 8.2 x 10{sup 14} cm{sup {minus}3}, respectively. A direct comparison between the as-grown and annealed spectra revealed the presence of an additional midgap hole trap, with a concentration of 4 x 10{sup 14} cm{sup {minus}3} in the as-grown material. The concentration of this trap is sharply reduced by annealing, which correlates with improved material quality and minority carrier properties after annealing. Of the four hole traps detected, only the 0.48 eV level is not influenced by annealing, suggesting this level may be important for processed InGaAsN devices in the future.

  11. Avalanche buildup time of an InP/InGaAsP/InGaAs APD at high gain

    SciTech Connect (OSTI)

    Hsieh, H.C.; Sargeant, W. (Iowa State Univ. of Science and Technology, Ames, IA (USA). Dept. of Electrical Engineering)

    1989-09-01T23:59:59.000Z

    Under a high-gain operating condition, the presence of a multiplication process in the InGaAs(P) regions of an InP/InGaAsP/InGaAs avalanche photodiode having a structure of separated absorption and multiplication regions (SAM-APD) could lead to significant enhancement of the avalanche buildup time. As a result, the bandwidth of the device could be reduced considerably. The dependence of the avalanche multiplication factor and the intrinsic response time on the reverse bias voltage, the heterointerface field, the doping concentrations, and the width of the InP layer are examined in detail for the case in which hole injection is assumed. It is shown, for example, that for a fixed value of doping concentrations, the reduction of the excess noise factor and the enhancement of the gain-bandwidth product of the device can be made at the same time by a proper increase of the width of the InP layer.

  12. Structural and magnetic properties of NiZn and Zn ferrite thin films obtained by laser ablation deposition

    E-Print Network [OSTI]

    McHenry, Michael E.

    Structural and magnetic properties of NiZn and Zn ferrite thin films obtained by laser ablation ferrite structures. Our investigations were performed on NiZn and Zn ferrite films deposited on silicon of the blocking temperature in both NiZn and Zn ferrite systems. © 2005 American Institute of Physics. DOI: 10

  13. The influence of Pt redistribution on Ni{sub 1-x}Pt{sub x}Si growth properties

    SciTech Connect (OSTI)

    Demeulemeester, J.; Smeets, D.; Temst, K.; Vantomme, A. [Instituut voor Kern-en Stralingsfysica and INPAC, K.U.Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium); Comrie, C. M. [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa); Van Bockstael, C.; Knaepen, W.; Detavernier, C. [Department of Solid State Sciences, Ghent University, B-9000 Gent (Belgium)

    2010-08-15T23:59:59.000Z

    We have studied the influence of Pt on the growth of Ni silicide thin films by examining the Pt redistribution during silicide growth. Three different initial Pt configurations were investigated, i.e., a Pt alloy (Ni+Pt/), a Pt capping layer (Pt/Ni/) and a Pt interlayer (Ni/Pt/), all containing 7 at. % Pt relative to the Ni content. The Pt redistribution was probed using in situ real-time Rutherford backscattering spectrometry (RBS) whereas the phase sequence was monitored during the solid phase reaction (SPR) using in situ real-time x-ray diffraction. We found that the capping layer and alloy exhibit a SPR comparable to the pure Ni/ system, whereas Pt added as an interlayer has a much more drastic influence on the Ni silicide phase sequence. Nevertheless, for all initial sample configurations, Pt redistributes in an erratic way. This phenomenon can be assigned to the low solubility of Pt in Ni{sub 2}Si compared to NiSi and the high mobility of Pt in Ni{sub 2}Si compared to pure Ni. Real-time RBS further revealed that the crucial issue determining the growth properties of each silicide phase is the Pt concentration at the Si interface during the initial stages of phase formation. The formation of areas rich in Pt reduce the Ni silicide growth kinetics which influences the phase sequence and properties of the silicides.

  14. The interfacial reaction of Ni on (100) Si?â??xGex (x=0, 0.25) and (111) Ge

    E-Print Network [OSTI]

    Jin, Lijuan

    The interfacial reaction of Ni with Si, Si?.??Ge?.??, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, ...

  15. Room-Temperature Metal-Hydride Discharge Source, with Observations on NiH and FeH Raphael Vallon,

    E-Print Network [OSTI]

    Ashworth, Stephen H.

    Room-Temperature Metal-Hydride Discharge Source, with Observations on NiH and FeH Raphae¨l Vallon laser excitation and dispersed fluorescence spectra of NiH have also been recorded. The source has been are strong enough to record dispersed fluorescence from NiH by Fourier transform interferometry in magnetic

  16. Na, Mg, Ni and Cs distribution and speciation after long-term alteration of a simulated nuclear waste glass

    E-Print Network [OSTI]

    distribution and speciation of Na, Mg, Ni and Cs in a simulated (inactive) nuclear waste glass were studied and Cs represent dose determining long-lived radionuclides (59 Ni, 135 Cs) in vitrified nuclear wasteNa, Mg, Ni and Cs distribution and speciation after long-term alteration of a simulated nuclear

  17. Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers.

    SciTech Connect (OSTI)

    Kurtz, Steven Ross; Follstaedt, David Martin; Wright, Alan Francis; Baca, Albert G.; Briggs, Ronald D.; Provencio, Paula Polyak; Missert, Nancy A.; Allerman, Andrew Alan; Marsh, Phil F.; Koleske, Daniel David; Lee, Stephen Roger; Shul, Randy John; Seager, Carleton Hoover; Tigges, Christopher P.

    2005-12-01T23:59:59.000Z

    GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the art HEMT transistors and amplifiers.

  18. High Temperature Oxidation Behavior of gamma-Ni+gamma'-Ni3Al Alloys and Coatings Modified with Pt and Reactive Elements

    SciTech Connect (OSTI)

    Nan Mu

    2007-12-01T23:59:59.000Z

    Materials for high-pressure turbine blades must be able to operate in the high-temperature gases (above 1000 C) emerging from the combustion chamber. Accordingly, the development of nickel-based superalloys has been constantly motivated by the need to have improved engine efficiency, reliability and service lifetime under the harsh conditions imposed by the turbine environment. However, the melting point of nickel (1455 C) provides a natural ceiling for the temperature capability of nickel-based superalloys. Thus, surface-engineered turbine components with modified diffusion coatings and overlay coatings are used. Theses coatings are capable of forming a compact and adherent oxide scale, which greatly impedes the further transport of reactants between the high-temperature gases and the underlying metal and thus reducing attack by the atmosphere. Typically, these coatings contain {beta}-NiAl as a principal constituent phase in order to have sufficient aluminum content to form an Al{sub 2}O{sub 3} scale at elevated temperatures. The drawbacks to the currently-used {beta}-based coatings, such as phase instabilities, associated stresses induced by such phase instabilities, and extensive coating/substrate interdiffusion, are major motivations in this study to seek next-generation coatings. The high-temperature oxidation resistance of novel Pt + Hf-modified {gamma}-Ni + {gamma}-Ni{sub 3}Al-based alloys and coatings were investigated in this study. Both early-stage and 4-days isothermal oxidation behavior of single-phase {gamma}-Ni and {gamma}{prime}-Ni{sub 3}Al alloys were assessed by examining the weight changes, oxide-scale structures, and elemental concentration profiles through the scales and subsurface alloy regions. It was found that Pt promotes Al{sub 2}O{sub 3} formation by suppressing the NiO growth on both {gamma}-Ni and {gamma}{prime}Ni{sub 3}Al single-phase alloys. This effect increases with increasing Pt content. Moreover, Pt exhibits this effect even at lower temperatures ({approx}970 C) in the very early stage of oxidation. It was also inferred that Pt enhances the diffusive flux of aluminum from the substrate to the scale/alloy interface. Relatively low levels of hafnium addition to Pt-free {gamma}{prime}-Ni{sub 3}Al increased the extent of external NiO formation due to non-protective HfO{sub 2} formation. Accordingly, this effect intensified with increasing Hf content from 0.2 to 0.5 at.%.

  19. GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy

    SciTech Connect (OSTI)

    Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States)] [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Yu, K. M.; Walukiewicz, W. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)] [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kudrawiec, R. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Institute of Physics, Wroclaw University of Technology, Wybrzeze, Wyspianskiego 27, 50-370 Wroclaw (Poland); Luce, A. V. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Ting, M. [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States)] [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)] [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

    2013-03-18T23:59:59.000Z

    Dilute nitride GaNAsP thin films were grown via a GaAsP metamorphic buffer on GaP(100) substrate with gas-source molecular beam epitaxy. The compositions of this III-V-V-V compound were determined by channeling Rutherford backscattering spectroscopy and nuclear reaction analysis. Photoreflectance shows two distinctive transitions from the valence band to the split conduction bands due to N incorporation. Photoluminescence and optical absorption show the fundamental bandgap of Ga(N)AsP is largely tailored by the small amount of N. The observed multiband characteristics and the bandgap tunability of GaNAsP are two merits that fit into the intermediate-band solar cell roadmap, and GaNAsP of high crystal quality provides a strong candidate for intermediate band solar cell materials.

  20. Low-cost, high-efficiency solar cells utilizing GaAs-on-Si technology

    SciTech Connect (OSTI)

    Vernon, S.M. (Spire Corp., Bedford, MA (United States))

    1993-04-01T23:59:59.000Z

    This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, [approximately] 1 [times] 10[sup 5] cm[sup [minus]5], as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 [times]10[sup 7] cm[sup [minus]2]. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells.

  1. Ga[sub 13], Al[sub 13], GaAl[sub 12], and chromium-pillared montmorillonites: Acidity and reactivity for cumene conversion

    SciTech Connect (OSTI)

    Bradley, S.M.; Kydd, R.A. (Univ. of Calgary, Alberta (Canada))

    1993-05-01T23:59:59.000Z

    A comparison has been made of the acidic characters of a series of metal polyoxocation pillar interlayered clay minerals (M-PILCs) by studying the infrared spectra of adsorbed pyridine. These comparisons were made for Ga[sub 13]-, Al[sub 13]- and GaAl[sub 12]-PILCs, and for Na[sup +]-exchanged montmorillonite (Na-STx-1). The Ga[sub 13]-PILC, was found to exhibit the strongest Lewis acid sites, followed by the AL[sub 13]-, and GaAl[sub 12]-PILCs and then by the Ns-STx-1. The relative number of Lewis acid sites, however, was found to be much greater for the GaAl[sub 12]-PILC, particularly after calcination at higher temperatures, indicating that the Ga[sub 13] Lewis acid sites did not have as high a thermal stability. The Broensted acidic characters for the pillared clays depend on the pillar, and follow the general decreasing order of abundance of GaAl[sub 12]-, Al[sub 13], and Ga[sub 13]-PILC when expressed as absorbance per unit mass. When the acidities per unit surface area were estimated, however, the Ga[sub 13]-PILCs were found to have the greatest number. This indicated that while the pillars contribute to the PILC acidities primarily through increasing the exposed phyllosilicate sheet surface areas, there is also a significant effect arising from the acidic characters of the pillars themselves. The dehydrogenation activities of Ga[sub 13]-, GaAl[sub 12]-, Al[sub 13]-, and Na-STx-1, in addition to a chromium polyoxocation-PILC, were compared by observing the products formed upon reaction with the model compound cumene. The Ga[sub 13]- and chromium-PILCs and the Na-Stx-1 exhibited almost exclusively dehydrogenation activities, whereas the Al[sub 13]- and GaAl[sub 12]-PILCs exhibited both cracking and dehydrogenation behaviors. These results prove that the pillars themselves can very strongly effect the catalytic activities of the PILCs. 3 refs., 6 figs., 2 tabs.

  2. Advertising rates for 4NI, the Directory Portal for Northern IrelandAdd to the Guestbook of 4NI, the Directory Portal for Northern IreBack to 4NI, the Directory Portal for No 24 February 2004 @ 10:33:27 AM

    E-Print Network [OSTI]

    West, Stuart

    Advertising rates for 4NI, the Directory Portal for Northern IrelandAdd to the Guestbook of 4NI, the Directory Portal for Northern IreBack to 4NI, the Directory Portal for No 24 February 2004 @ 10:33:27 AM Directory Portal For Northern Ireland Industry News 20 February 2004 Some mammals can adjust sex

  3. Status of vibrational structure in {sup 62}Ni

    SciTech Connect (OSTI)

    Chakraborty, A.; Orce, J. N.; Ashley, S. F.; Crider, B. P.; Elhami, E.; McEllistrem, M. T.; Mukhopadhyay, S. [Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506-0055 (United States); Brown, B. A. [National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, Michigan 48824 (United States); Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824 (United States); Peters, E. E. [Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506-0055 (United States); Singh, B. [Department of Physics and Astronomy, McMaster University, Hamilton, Ontario, L8S 4M1 (Canada); Yates, S. W. [Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506-0055 (United States); Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506-0055 (United States)

    2011-03-15T23:59:59.000Z

    Measurements consisting of {gamma}-ray excitation functions and angular distributions were performed using the (n,n{sup '{gamma}}) reaction on {sup 62}Ni. The excitation function data allowed us to check the consistency of the placement of transitions in the level scheme. From {gamma}-ray angular distributions, the lifetimes of levels up to {approx}3.8 MeV in excitation energy were extracted with the Doppler-shift attenuation method. The experimentally deduced values of reduced transition probabilities were compared with the predictions of the quadrupole vibrator model and with large-scale shell model calculations in the fp shell configuration space. Two-phonon states were found to exist with some notable deviation from the predictions of the quadrupole vibrator model, but no evidence for the existence of three-phonon states could be established. Z=28 proton core excitations played a major role in understanding the observed structure.

  4. Oddelek za fiziko Seminar Ia -1. letnik, II. stopnja

    E-Print Network [OSTI]

    Â?umer, Slobodan

    the whole history, the mankind has been facing problems of energy sufficiency and efficiency. Nowadays, when is solar power. The energy of solar photons has already been implemented in solar cells generating electrical energy. But solar energy can be used directly to produce heat and drive a generator as well

  5. Oddelek za ziko Normal modes in the atmosphere

    E-Print Network [OSTI]

    Â?umer, Slobodan

    weather prediction. In section 3 I concentrate on the normal modes of a very simple model, shallow water #12;Numerical weather prediction is an initial condition problem. That means we need ini- tial-gravity waves just play their role, but in numerical models of the atmosphere, they can cause huge problems. 1

  6. Univerza v Ljubljani Fakulteta za matematiko in fiziko

    E-Print Network [OSTI]

    Â?umer, Slobodan

    . Most satellites in the Earth's orbit use solar panels for producing electricity for running all a premium on the rocket's specific impulse Is defined as the ratio of the total impulse per unit weight w

  7. Univerza v Ljubljani Fakulteta za matematiko in fiziko

    E-Print Network [OSTI]

    Â?umer, Slobodan

    Author: Petra Smitek Mentor: doc. dr. Andreja Gomboc Ljubljana, October 2014 Abstract Gamma ray bursts. In this seminar, basic properties of gamma ray burst are given. The exceptionally bright gamma ray burst GRB GRB and SN . . . . . . . . . . . . . . . . . . 8 4 Conclusion 11 1 Introduction Gamma ray bursts (GRB

  8. Ston Bake P za 10" Bi Plate Salad Gourme Sandwiche

    E-Print Network [OSTI]

    Dixon, Peter

    and Mozzarella Make your Vegetarian Hot, add fresh chilli for 50p! Pir Pir Chicke £6.10 Spicy Chicken Breast ciabatta roll Pir Pir Chicke Sandwic £5.25 Breast of chicken marinated with piri piri spices on a bed

  9. Univerza v Ljubljani Fakulteta za matematiko in fiziko

    E-Print Network [OSTI]

    Â?umer, Slobodan

    as well. Finally, I will list some existing and succesful implementations of systems powered by harvested . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 Photovoltaic cells 6 4.1 Theory present everywhere around us. With their ubiquity and ever decreasing size and power consumption

  10. E-Print Network 3.0 - algorithm ga technique Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for: algorithm ga technique Page: << < 1 2 3 4 5 > >> 1 GAMMA: Global Arrays Meets MATLAB Rajkiran Panuganti Summary: is a straightforward implementa- tion of a standard...

  11. Evolution of ion-induced nanoparticle arrays on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Al-Heji, A. A.; Shende, O.; Huang, S.; Jeon, S.; Goldman, R. S., E-mail: rsgold@umich.edu [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2014-05-05T23:59:59.000Z

    We have examined the evolution of irradiation-induced Ga nanoparticle (NP) arrays on GaAs surfaces. Focused-ion-beam irradiation of pre-patterned GaAs surfaces induces monotonic increases in the NP volume and aspect ratio up to a saturation ion dose, independent of NP location within the array. Beyond the saturation ion dose, the NP volume continues to increase monotonically while the NP aspect ratio decreases monotonically. In addition, the NP volumes (aspect ratios) are highest (lowest) for the corner NPs. We discuss the relative influences of bulk and surface diffusion on the evolution of Ga NP arrays.

  12. Absorption and photoluminescence of ternary nanostructured Ge-S-Ga(In)glassy semiconductor systems

    SciTech Connect (OSTI)

    Babaev, A. A., E-mail: babaev-arif@mail.ru [Russian Academy of Sciences, Amirkhanov Institute of Physics, Dagestan Scientific Center (Russian Federation); Kudoyarova, V. Kh. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-07-15T23:59:59.000Z

    The photoluminescence and luminescence excitation spectra and the edge and IR absorption of Ge-S-Ga(In) glassy semiconductor systems are studied. The observed shifts of the optical-absorption edge, photoluminescence spectra (a decrease in their full width at half-maximum), and luminescence excitation spectra to lower energies upon the introduction of Ga or In into Ge-S binary systems are due to the fact that Ga or In tend to interact with sulfur, rather than with germanium. As the content of Ga(In) in the system increases, the intensity of the absorption band associated with vibrations of the Ge-S bond decreases.

  13. Structural defects in GaN revealed by Transmission Electron Microscopy

    SciTech Connect (OSTI)

    Liliental-Weber, Zuzanna

    2014-04-18T23:59:59.000Z

    This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

  14. The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)

    SciTech Connect (OSTI)

    Baron, N. [CRHEA-CNRS, rue Bernard Gregory, Parc de Sophia Antipolis, 06560 Valbonne (France); PICOGIGA International, Place Marcel Rebuffat, Parc de Villejust, 91971 Courtaboeuf (France); Cordier, Y.; Chenot, S.; Vennegues, P.; Tottereau, O.; Leroux, M.; Semond, F.; Massies, J. [CRHEA-CNRS, rue Bernard Gregory, Parc de Sophia Antipolis, 06560 Valbonne (France)

    2009-02-01T23:59:59.000Z

    This work is dedicated to the study of the growth by ammonia source molecular beam epitaxy of Al{sub x}Ga{sub 1-x}N/GaN high electron mobility transistors on (111) oriented silicon substrates. The effect of growth conditions on the structural and electrical properties of the heterostructures was investigated. It is shown that even a slight variation in the growth temperature of the thick GaN buffer on AlN/GaN stress mitigating layers has a drastic influence on these properties via a counterintuitive effect on the dislocation density. Both in situ curvature measurements and ex situ transmission electron microscopy and x-ray diffraction experiments indicate that the relaxation rate of the lattice mismatch stress increases with the growth temperature but finally results in a higher dislocations density. Furthermore, a general trend appears between the final wafer curvature at room temperature and the threading dislocation density. Finally, the influence of the dislocation density on the GaN buffer insulating properties and the two-dimensional electron gas transport properties at the Al{sub x}Ga{sub 1-x}N/GaN interface is discussed.

  15. Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices

    SciTech Connect (OSTI)

    C.A. Wang; D.A. Shiau; P.G. Murphy; P.W. O'brien; R.K. Huang; M.K. Connors; A.C. Anderson; D. Donetsky; S. Anikeev; G. Belenky; D.M. Depoy; G. Nichols

    2003-06-16T23:59:59.000Z

    GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO{sub x}/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

  16. Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter

    SciTech Connect (OSTI)

    Däubler, J., E-mail: juergen.daeubler@iaf.fraunhofer.de; Passow, T.; Aidam, R.; Köhler, K.; Kirste, L.; Kunzer, M.; Wagner, J. [Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, 79108 Freiburg (Germany)

    2014-09-15T23:59:59.000Z

    Metamorphic (i.e., linear composition graded) GaInN buffer layers with an increased in-plane lattice parameter, grown by plasma-assisted molecular beam epitaxy, were used as templates for metal organic vapor phase epitaxy (MOVPE) grown GaInN/GaInN quantum wells (QWs), emitting in the green to red spectral region. A composition pulling effect was observed allowing considerable higher growth temperatures for the QWs for a given In composition. The internal quantum efficiency (IQE) of the QWs was determined by temperature and excitation power density dependent photoluminescence (PL) spectroscopy. An increase in IQE by a factor of two was found for green emitting QWs grown on metamorphic GaInN buffer compared to reference samples grown on standard GaN buffer layers. The ratio of room temperature to low temperature intensity PL of the red emitting QWs were found to be comparable to the PL efficiency of green emitting QWs, both grown on metamorphic GaInN buffers. The excitation density and well width dependence of the IQE indicate a reduction of the quantum confined Stark effect upon growth on GaInN buffer layers with increased in-plane lattice parameter.

  17. NREL Improves Hole Transport in Sensitized CdS-NiO Nanoparticle Photocathodes (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2012-01-01T23:59:59.000Z

    Significantly improved charge-collection efficiencies result from a general chemical approach to synthesizing photocathodes. It has been reported that a dye-sensitized nickel oxide (NiO) photocathode, when coupled to a dye-sensitized photoanode, could significantly increase overall solar conversion efficiency. However, the conversion efficiencies of these cells are still low. There has been much effort to improve the conversion efficiency by fabricating films with improved properties and developing more effective sensitizing dyes for p-type NiO. One of the factors limiting the use of NiO for solar cell application is the low hole conductivity in p-NiO. A team of researchers from the National Renewable Energy Laboratory (NREL) developed a general chemical approach to synthesize NiO-cadmium sulfide (CdS) core-shell nanoparticle films as photocathodes for p-type semiconductor-sensitized solar cells. Compared to dye-sensitized NiO photocathodes, the CdS-sensitized NiO cathodes exhibited two orders of magnitude faster hole transport (attributable to the passivation of surface traps by the CdS) and almost 100% charge-collection efficiencies.

  18. Fabrication of hollow mesoporous NiO hexagonal microspheres via hydrothermal process in ionic liquid

    SciTech Connect (OSTI)

    Zhao, Jinbo, E-mail: zhaojinb@gmail.com [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, 250061, Jinan (China) [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, 250061, Jinan (China); School of Materials Science and Engineering, Shandong University, 250061, Jinan (China); Wu, Lili, E-mail: wulili@sdu.edu.cn [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, 250061, Jinan (China) [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, 250061, Jinan (China); School of Materials Science and Engineering, Shandong University, 250061, Jinan (China); Zou, Ke, E-mail: zouk2005@163.com [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, 250061, Jinan (China) [Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, 250061, Jinan (China); School of Materials Science and Engineering, Shandong University, 250061, Jinan (China)

    2011-12-15T23:59:59.000Z

    Highlights: Black-Right-Pointing-Pointer Ni(OH){sub 2} precursors were synthesized in ionic liquid and water solution by hydrothermal method. Black-Right-Pointing-Pointer NiO hollow microspheres were prepared by thermal treatment of Ni(OH){sub 2} precursors. Black-Right-Pointing-Pointer NiO hollow microspheres were self-assembled by mesoporous cubic and hexagonal nanocrystals with high specific surface area. Black-Right-Pointing-Pointer The mesoporous structure is stable at 773 K. Black-Right-Pointing-Pointer The ionic liquid absorbed on the O-terminate surface of the crystals to form hydrogen bond and played key roles in determining the final shape of the NiO novel microstructure. -- Abstract: The novel NiO hexagonal hollow microspheres have been successfully prepared by annealing Ni(OH){sub 2}, which was synthesized via an ionic liquid-assisted hydrothermal method. The samples were characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), transmission electron microscopy (TEM), N{sub 2} adsorption-desorption and Fourier transform infrared spectrometer (FTIR). The results show that the hollow NiO microstructures are self-organized by mesoporous cubic and hexagonal nanocrystals. The mesoporous structure possessed good thermal stability and high specific surface area (ca. 83 m{sup 2}/g). The ionic liquid 1-butyl-3methylimidazolium tetrafluoroborate ([Bmim][BF{sub 4}]) was found to play a key role in controlling the morphology of NiO microstructures during the hydrothermal process. The special hollow mesoporous architectures will have potential applications in many fields, such as catalysts, absorbents, sensors, drug-delivery carriers, acoustic insulators and supercapacitors.

  19. High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier

    SciTech Connect (OSTI)

    Petukhov, A. A., E-mail: andrey-rus29@rambler.ru; Zhurtanov, B. E.; Kalinina, K. V.; Stoyanov, N. D.; Salikhov, H. M.; Mikhailova, M. P.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-09-15T23:59:59.000Z

    The electroluminescent properties of an n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with a high potential barrier in the conduction band (large conduction-band offset) at the n-GaSb/n-InGaAsSb type-II heterointerface ({Delta}E{sub c} = 0.79 eV) are studied. Two bands with peaks at 0.28 and 0.64 eV at 300 K, associated with radiative recombination in n-InGaAsSb and n-GaSb, respectively, are observed in the electroluminescence (EL) spectrum. In the entire temperature range under study, T = 290-480 K, additional electron-hole pairs are formed in the n-InGaAsSb active region by impact ionization with hot electrons heated as a result of the conduction-band offset. These pairs contribute to radiative recombination, which leads to a nonlinear increase in the EL intensity and output optical power with increasing pump current. A superlinear increase in the emission power of the long-wavelength band is observed upon heating in the temperature range T = 290-345 K, and a linear increase is observed at T > 345 K. This work for the first time reports an increase in the emission power of a light-emitting diode structure with increasing temperature. It is shown that this rise is caused by a decrease in the threshold energy of the impact ionization due to narrowing of the band gap of the active region.

  20. Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions

    SciTech Connect (OSTI)

    Piprek, Joachim, E-mail: piprek@nusod.org [NUSOD Institute LLC, P.O. Box 7204, Newark, Delaware 19714 (United States)

    2014-02-03T23:59:59.000Z

    This Letter investigates the efficiency enhancement achieved by tunnel junction insertion into the InGaN/GaN multi-quantum well (MQW) active region of blue light emitting diodes (LEDs). The peak quantum efficiency of such LED exceeds 100%, but the maximum wall-plug efficiency (WPE) hardly changes. However, due to the increased bias, the WPE peaks at much higher input power, i.e., the WPE droop is significantly delayed, and the output power is strongly enhanced. The main physical reason for this improvement lies in the non-uniform vertical carrier distribution typically observed within InGaN MQWs.

  1. Magnetic properties of Ga doped cobalt ferrite: Compton scattering study

    SciTech Connect (OSTI)

    Sharma, Arvind, E-mail: arvind.phd.swm@gmail.com; Mund, H. S.; Ahuja, B. L. [Department of Physics, University College of Science, M.L. Sukhadia University, Udaipur-313001 (India); Sahariya, Jagrati [Department of Physics, Manipal University, Jaipur-303007 (India); Itou, M.; Sakurai, Y. [Japan Synchrotron Radiation Research Institute, SPring8, 1-1-1 Kouto, Sayo, Hyogo 679-5198 (Japan)

    2014-04-24T23:59:59.000Z

    We present the spin momentum density of Ga doped CoFe{sub 2}O{sub 4} at 100 K using magnetic Compton scattering. The measurement has been performed using circularly polarized synchrotron radiations of 182.65 keV at SPring8, Japan. The experimental profile is decomposed into its constituent profile to determine the spin moment at individual sites. Co atom has the maximum contribution (about 58%) in the total spin moment of the doped CoFe{sub 2}O{sub 4}.

  2. Low dimensional GaAs/air vertical microcavity lasers

    SciTech Connect (OSTI)

    Gessler, J.; Steinl, T.; Fischer, J.; Höfling, S.; Schneider, C.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg (Germany); Mika, A.; S?k, G.; Misiewicz, J. [Institute of Physics, Wroclaw University of Technology, Wybrze?e Wyspia?skiego 27, 50-370 Wroc?aw (Poland)

    2014-02-24T23:59:59.000Z

    We report on the fabrication of gallium arsenide (GaAs)/air distributed Bragg reflector microresonators with indium gallium arsenide quantum wells. The structures are studied via momentum resolved photoluminescence spectroscopy which allows us to investigate a pronounced optical mode quantization of the photonic dispersion. We can extract a length parameter from these quantized states whose upper limit can be connected to the lateral physical extension of the microcavity via analytical calculations. Laser emission from our microcavity under optical pumping is observed in power dependent investigations.

  3. Quantum effects in electron beam pumped GaAs

    SciTech Connect (OSTI)

    Yahia, M. E. [Faculty of Engineering, The British University in Egypt (BUE), El-Shorouk City, Cairo (Egypt) [Faculty of Engineering, The British University in Egypt (BUE), El-Shorouk City, Cairo (Egypt); National Institute of Laser Enhanced Sciences (NILES), Cairo University (Egypt); Azzouz, I. M. [National Institute of Laser Enhanced Sciences (NILES), Cairo University (Egypt)] [National Institute of Laser Enhanced Sciences (NILES), Cairo University (Egypt); Moslem, W. M. [Department of Physics, Faculty of Science, Port Said University, Port Said (Egypt)] [Department of Physics, Faculty of Science, Port Said University, Port Said (Egypt)

    2013-08-19T23:59:59.000Z

    Propagation of waves in nano-sized GaAs semiconductor induced by electron beam are investigated. A dispersion relation is derived by using quantum hydrodynamics equations including the electrons and holes quantum recoil effects, exchange-correlation potentials, and degenerate pressures. It is found that the propagating modes are instable and strongly depend on the electron beam parameters, as well as the quantum recoil effects and degenerate pressures. The instability region shrinks with the increase of the semiconductor number density. The instability arises because of the energetic electron beam produces electron-hole pairs, which do not keep in phase with the electrostatic potential arising from the pair plasma.

  4. Defect studies in ion irradiated AlGaN. | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed Newcatalyst phasesData Files Data Files 1B&W Y-12studies in ion irradiated AlGaN.

  5. Phonon densities of states of face-centered-cubic Ni-Fe alloys

    SciTech Connect (OSTI)

    Lucas, Matthew [United States Air Force Research Laboratory, Wright-Patterson Air Force Base] [United States Air Force Research Laboratory, Wright-Patterson Air Force Base; Mauger, L [California Institute of Technology, W. M. Keck Laboratory, Pasadena] [California Institute of Technology, W. M. Keck Laboratory, Pasadena; Munoz, Jorge A. [California Institute of Technology, Pasadena] [California Institute of Technology, Pasadena; Halevy, I [California Institute of Technology, Pasadena] [California Institute of Technology, Pasadena; Horwath, J [United States Air Force Research Laboratory, Wright-Patterson Air Force Base] [United States Air Force Research Laboratory, Wright-Patterson Air Force Base; Semiatin, S L [United States Air Force Research Laboratory, Wright-Patterson Air Force Base] [United States Air Force Research Laboratory, Wright-Patterson Air Force Base; Leontsev, S. O. [University of Kentucky, Lexington] [University of Kentucky, Lexington; Stone, Matthew B [ORNL] [ORNL; Abernathy, Douglas L [ORNL] [ORNL; Xiao, Yuming [Carnegie Institution of Washington] [Carnegie Institution of Washington; Chow, P [HPCAT Geophysical Lab, Argonne, IL] [HPCAT Geophysical Lab, Argonne, IL; Fultz, B. [California Institute of Technology, Pasadena] [California Institute of Technology, Pasadena

    2013-01-01T23:59:59.000Z

    Inelastic neutron scattering and nuclear resonant inelastic x-ray scattering were used to determine the phonon densities of states of face-centered-cubic Ni-Fe alloys. Increasing Fe concentration results in an average softening of the phonon modes. Chemical ordering of the Ni0.72Fe0.28 alloy results in a reduction of the partial vibrational entropy of the Fe atoms but does not significantly change the partial vibrational entropy of the Ni atoms. Changes in the phonon densities of states with composition and chemical ordering are discussed and analyzed with a cluster expansion method.

  6. Gamma-strength functions in 60Ni from two-step cascades following proton capture

    E-Print Network [OSTI]

    A. Voinov; S. M. Grimes; C. R. Brune; M. Guttormsen; A. C. Larsen; T. N. Massey; A. Schiller; S. Siem

    2009-11-10T23:59:59.000Z

    The two-step cascade method previously used in neutron capture experiments is now applied to a proton capture reaction. The spectrum of two-step cascades populating the first 2+ level of 60Ni has been measured with 59Co(p,2gamma)60Ni reaction. The simulation technique used for the spectrum analysis allows one to reveal the range of possible shapes of both E1 and M1 gamma-strength functions. The low-energy enhancement previously observed in 3He induced reactions is seen to appear in M1 strength functions of 60Ni.

  7. Cyclic voltammetric study of Co-Ni-Fe alloys electrodeposition in sulfate medium

    SciTech Connect (OSTI)

    Hanafi, I.; Daud, A. R.; Radiman, S. [Material Science Program, School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor (Malaysia)

    2013-11-27T23:59:59.000Z

    Electrochemical technique has been used to study the electrodeposition of cobalt, nickel, iron and Co-Ni-Fe alloy on indium tin oxide (ITO) coated glass substrate. To obtain the nucleation mechanism, cyclic voltammetry is used to characterize the Co-Ni-Fe system. The scanning rate effect on the deposition process was investigated. Deposition of single metal occurs at potential values more positive than that estimated stability potential. Based on the cyclic voltammetry results, the electrodeposition of cobalt, nickel, iron and Co-Ni-Fe alloy clearly show that the process of diffusion occurs is controlled by the typical nucleation mechanism.

  8. Isospin Diffusion in $^{58}$Ni-Induced Reactions at Intermediate Energies

    E-Print Network [OSTI]

    Galichet, E; Borderie, B; Colonna, M; Bougault, R; Durand, D; Neindre, N Le; Lopez, O; Manduci, L; Vient, E; Chbihi, A; Frankland, J D; Wieleczko, J P; Dayras, R; Volant, C; Guinet, D C R; Lautesse, P; Parlog, M; Rosato, E; Vigilante, M

    2010-01-01T23:59:59.000Z

    Isospin diffusion is probed as a function of the dissipated energy by studying two systems $^{58}$Ni+$^{58}$Ni and $^{58}$Ni+$^{197}$Au, over the incident energy range 52-74\\AM. Experimental data are compared with the results of a microscopic transport model with two different parameterizations of the symmetry energy term. A better overall agreement between data and simulations is obtained when using a symmetry term with a potential part linearly increasing with nuclear density. The isospin equilibration time at 52 \\AM{} is estimated to 130$\\pm$10 fm/$c$.

  9. Nanoparticle size and morphology control using ultrafast laser induced forward transfer of Ni thin films

    SciTech Connect (OSTI)

    Murphy, Ryan D. [Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109 (United States)] [Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109 (United States); Abere, Michael J.; Schrider, Keegan J.; Yalisove, Steven M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Torralva, Ben [Department of Atmospheric, Oceanic and Space Sciences, University of Michigan, Ann Arbor, Michigan 48109 (United States)] [Department of Atmospheric, Oceanic and Space Sciences, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2013-08-26T23:59:59.000Z

    We have developed a nanoparticle (NP) printing technique using Ni thin film lift-off from glass substrates after ultrafast irradiation in air. Unique interactions of ultrafast laser pulses with thin films allow for control over NP faceting and size distributions. Control is achieved by changing the laser fluence, film thickness, and film-substrate distance. We demonstrate 20 nm Ni film removal from substrates and rapid NP printing, with size distributions centered at a 6 nm diameter. When the Ni film thickness is lowered to 10 nm, NPs are printed with distributions peaked at a 2 nm diameter.

  10. Ni-Cr-P plating bath time dependent characterization by ion chromatography

    E-Print Network [OSTI]

    Faxel, Ralph Edward

    1990-01-01T23:59:59.000Z

    analysis of Cr VII. HPIC gradient eluation program for anions VIII. HPIC eluation program for HsBOs IX. A method comparison of initial Ni-Cr-P plating bath ionic species concentrations as determined by weight measurement and HPIC analysis. X. Ni... the rate constants for compound C. 40 44 79 80 CHAPTER I INTRODUCTION Amorphous Nickel-Chromium-Phosphorus (Ni-Cr-P) alloys have outstand- ing corrosion resistance, which is even superior to that of Hastelloy C-276 (1). This corrosion resistance...

  11. Significant Reduction in NiO Band Gap upon Formation of LixNi1?xO Alloys: Applications to Solar Energy Conversion

    SciTech Connect (OSTI)

    Alidoust, Nima; Toroker, Maytal; Keith, John A.; Carter, Emily A.

    2014-01-01T23:59:59.000Z

    Long-term sustainable solar energy conversion relies on identifying economical and versatile semiconductor materials with appropriate band structures for photovoltaic and photocatalytic applications (e.g., band gaps of ?1.5–2.0 eV). Nickel oxide (NiO) is an inexpensive yet highly promising candidate. Its charge-transfer character may lead to longer carrier lifetimes needed for higher efficiencies, and its conduction band edge is suitable for driving hydrogen evolution via water-splitting. However, NiO’s large band gap (?4 eV) severely limits its use in practical applications. Our first-principles quantum mechanics calculations show band gaps dramatically decrease to ?2.0 eV when NiO is alloyed with Li2O. We show that LixNi1?xO alloys (with x=0.125 and 0.25) are p-type semiconductors, contain states with no impurity levels in the gap and maintain NiO’s desirable charge-transfer character. Lastly, we show that the alloys have potential for photoelectrochemical applications, with band edges well-placed for photocatalytic hydrogen production and CO2 reduction, as well as in tandem dye-sensitized solar cells as a photocathode.

  12. JOURNAL DE PHYSIQUE Colloque C1, supplbment au no 4, Tome 38, Avril 1977, page C1-139 MOSSBAUER SPECTROSCOPY OF Ni-FERRITE

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    SPECTROSCOPY OF Ni-FERRITE AND NON-STOICHIOMETRIC Ni-Zn FERRITES R. VALENZUELA, J. A. GARCIA Centro de Aut6noma de Mtxico Rbum6. - Les spectres d'absorption Mossbauer du ferrite de nickel et de ferrites Ni obtenusA la temperatureambianteet a 77 K. Pour le ferrite de Ni, les champs hyperfinsassocies aux ions

  13. Intern experience at the Honeywell Test Instrument Division: an internship report

    E-Print Network [OSTI]

    Sengupta, Debasis, 1949-

    2013-03-13T23:59:59.000Z

    ?( 0 1? 00 M z 0 0 1? UJ UJ ZCo on-OO i n CO CO>- CO o oo ? on UJ 1?? z z UJ > 01?1 ? 0 0 0 z UJ? > z 0 z 1? 1 UJ a : > 0 1? r> 1?H 0 0 0O > - CO 00 UJ O0..._ I? H? u . 0 00 ga ni za ti on Ch ar t PO bO yD e aH sH IR E HP _l 00c z: 31 1 02 ?4< *-? s: i- Z Q CD CO Z Z CO CD P - z#1 00 LU Qd OO S LU UJ o . CO z...

  14. Dynamic nuclear polarization and Hanle effect in (In,Ga)As/GaAs quantum dots. Role of nuclear spin fluctuations

    SciTech Connect (OSTI)

    Gerlovin, I. Ya. [Spin Optics Laboratory, Saint Petersburg State University, Petrodvorets, 198504 St. Petersburg (Russian Federation); Cherbunin, R. V.; Ignatiev, I. V.; Kuznetsova, M. S.; Verbin, S. Yu. [Spin Optics Laboratory, Saint Petersburg State University, Petrodvorets, 198504 St. Petersburg, Russia and Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund (Germany); Flisinski, K.; Bayer, M. [Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund (Germany); Reuter, D.; Wieck, A. D. [Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum (Germany); Yakovlev, D. R. [Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund, Germany and A. F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

    2013-12-04T23:59:59.000Z

    The degree of circular polarization of photoluminescence of (In,Ga)As quantum dots as a function of magnetic field applied perpendicular to the optical axis (Hanle effect) is experimentally studied. The measurements have been performed at various regimes of the optical excitation modulation. The analysis of experimental data has been performed in the framework of a vector model of regular nuclear spin polarization and its fluctuations. The analysis allowed us to evaluate the magnitude of nuclear polarization and its dynamics at the experimental conditions used.

  15. Ga-doped ZnO grown by pulsed laser deposition in H2: the roles of Ga and H.

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFun with Big Sky Learning Fun with Big SkyDIII-DRMR LSU/CAMD| EMSL Ga-doped

  16. Evanescent-wave pumped room-temperature single-mode GaAs/AlGaAs core-shell nanowire lasers

    SciTech Connect (OSTI)

    Wei, Wei; Zhang, Xia, E-mail: xzhang@bupt.edu.cn; Ren, Xiaomin [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, P.O. Box 66, Beijing 100876 (China); Liu, Yange, E-mail: ygliu@nankai.edu.cn; Wang, Zhi [Key Laboratory of Optical Information and Technology, Ministry of Education and Institute of Modern Optics, Nankai University, Tianjin 300071 (China)

    2014-06-02T23:59:59.000Z

    Evanescent-wave pumped room-temperature single-mode GaAs/AlGaAs core-shell nanowire lasers are proposed and demonstrated. The nanowires are axially excited by evanescent wave outside a microfiber with a diameter about 10??m via a ns-pulse laser. The lasing emission with a low effective threshold less than 90 nJ is achieved at 868.62?nm along with a linewidth of ?1.8?nm. Moreover, multiple lasing lines in a wavelength range from 852.56?nm to 882.48?nm are observed. The mechanism of diverse lasing wavelengths is revealed. Furthermore, the proposed GaAs/AlGaAs nanowire laser has advantages such as simple structure, easy to operate, and controllable lasing wavelength, tending to be practical in optical communications and integrated photonic circuits.

  17. Effects of capping on GaN quantum dots deposited on Al{sub 0.5}Ga{sub 0.5}N by molecular beam epitaxy

    SciTech Connect (OSTI)

    Korytov, M. [CRHEA-CNRS, rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France) and University of Nice Sophia-Antipolis, Parc Valrose, 06103 Nice (France); Benaissa, M. [CNRST, angle Allal-Fassi/FAR, Madinat al-irfane, 10000 Rabat (Morocco); Brault, J.; Vennegues, P. [CRHEA-CNRS, rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Huault, T. [CRHEA-CNRS, rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne, France and RIBER S.A., 31 rue Casimir Perier, BP 70083, 95873 Bezons Cedex (France); Neisius, T. [CP2M, Faculte Saint Jerome, 13397 Marseille Cedex 20 (France)

    2009-04-06T23:59:59.000Z

    The impact of the capping process on the structural and morphological properties of GaN quantum dots (QDs) grown on fully relaxed Al{sub 0.5}Ga{sub 0.5}N templates was studied by transmission electron microscopy. A morphological transition between the surface QDs, which have a pyramidal shape, and the buried ones, which have a truncated pyramid shape, is evidenced. This shape evolution is accompanied by a volume change: buried QDs are bigger than surface ones. Furthermore a phase separation into Al{sub 0.5}Ga{sub 0.5}N barriers was observed in the close vicinity of buried QDs. As a result, the buried QDs were found to be connected with the nearest neighbors by thin Ga-rich zones, whereas Al-rich zones are situated above the QDs.

  18. Molecular-beam epitaxial growth and characterization of inverted, pulse-doped AlGaAs/InGaAs transistor structures

    SciTech Connect (OSTI)

    Hoke, W.E.; Lyman, P.S.; Brierley, S.K. [Raytheon Research Division, Lexington, MA (United States)] [and others] [Raytheon Research Division, Lexington, MA (United States); and others

    1993-05-01T23:59:59.000Z

    Inverted, pulse-doped AlGaAs/InGaAs pseudomorphic high electron mobility transistor structures were grown by molecular-beam epitaxy. Growth conditions were optimized to improve the quality of the selectively doped AlGaAs layer and to minimize dopant diffusion into the InGaAs channel. The sheet densities and mobilities of the inverted structure were found to be essentially equivalent to those obtained with the normal structure. Shubnikov-de Haas measurements exhibited strong oscillations in the magnetoresistance and plateaus in the Hall resistance. Four optical transitions from the lowest bound electron and hole quantum well states were observed in room-temperature photoluminescence spectra. 15 refs., 4 figs.

  19. The Effect of Offcut Angle on Electrical Conductivity of Direct Wafer-Bonded n-GaAs/n-GaAs Structures for Wafer-Bonded Tandem Solar Cells

    E-Print Network [OSTI]

    Yeung, King Wah Sunny

    2012-01-01T23:59:59.000Z

    Efficiency of p?n Junction Solar Cells, J. Appl. Phys. 32,Inverted Triple- Junction Solar Cell with Two Independentlyof Thin-Film GaAs Solar Cells on Si Substrates, J. Appl.

  20. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes

    SciTech Connect (OSTI)

    Sizov, V. S., E-mail: vsizov@mail.ioffe.ru; Tsatsulnikov, A. F.; Sakharov, A. V.; Lundin, W. V.; Zavarin, E. E.; Cherkashin, N. A. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Hytch, M. J. [National Center for Scientific Research (CNRS), Center for Material Elaboration and Structural Studies (CEMES) (France); Nikolaev, A. E. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Mintairov, A. M.; He Yan; Merz, J. L. [University of Notre Dame, EE Department (United States)

    2010-07-15T23:59:59.000Z

    Optical and light-emitting diode structures with an active InGaN region containing short-period InGaN/GaN superlattices are studied. It is shown that short-period superlattices are thin two-dimensional layers with a relatively low In content that contain inclusions with a high In content 1-3 nm thick. Inclusions manifest themselves from the point of view of optical properties as a nonuniform array of quantum dots involved in a residual quantum well. The use of short-period superlattices in light-emitting diode structures allows one to decrease the concentration of nonradiative centers, as well as to increase the injection of carriers in the active region due to an increase in the effective height of the AlGaN barrier, which in general leads to an increase in the quantum efficiency of light-emitting diodes.

  1. Precipitation behavior of Ni-Cr-22 Fe-18 Mo (Hastelloy-X) and Ni-Cr-22 Co-12 Mo (Inconel-617) after isothermal aging

    SciTech Connect (OSTI)

    Kirchhofer, H.; Nickel, H.; Schubert, F.

    1984-07-01T23:59:59.000Z

    The precipitation behavior of the nickel-base alloys Ni-Cr-22Fe-18Mo (Hastelloy-X) and Ni-Cr-22Co12Mo (Inconel-617) has been investigated as a function of aging temperature. Hastelloy-X shows that M/sub 6/C and TiN are primary precipitates and M/sub 12/C, A/sub 3/B/sub 2/ (approx. = Fe/sub 3/Mo/sub 2/), and M/sub 23/C/sub 6/ are secondary precipitates, while Inconel-617 also has M/sub 6/C and TiN as primary precipitates and M/sub 23/C/sub 6/, M/sub 12/C, and Ni/sub 3/AlTi as secondary precipitates. The characterization has been carried out by metallographic and transmission electron microscopy investigations and by x-ray examinations of electrochemical isolated precipitates.

  2. Low Spring Index NiTi Coil Actuators for Use in Active Compression Garments

    E-Print Network [OSTI]

    Holschuh, Bradley

    This paper describes the modeling, development, and testing of low spring index nickel titanium (NiTi) coil actuators designed for use in wearable compression garments, and presents a prototype tourniquet system using these ...

  3. Preparation and Comparison of Two Electrodes for Supercapacitors: Pani/CNT/Ni and

    E-Print Network [OSTI]

    Pan, Ning

    Preparation and Comparison of Two Electrodes for Supercapacitors: Pani/CNT/Ni and Pani words: electrochemical supercapacitor; polymer- coated carbon nanotubes; nickel surface treatment for such electrochemical supercapacitors include any applications where intense pulse power supply and fast charge

  4. Metallographic study of gamma - gamma prime structure in the Ni-based superalloy GTD111

    E-Print Network [OSTI]

    Kountras, Apostolos, 1970-

    2004-01-01T23:59:59.000Z

    The potential for land-based turbine buckets material rejuvenation presents a significant commercial and scientific interest. Ni-based superalloy GTD111 is used at a number of GE-manufactured power generation turbines. The ...

  5. Structural changes during the reaction of Ni thin films with (100) silicon substrates

    E-Print Network [OSTI]

    Thron, Andrew M.; Greene, Peter K.; Liu, Kai; van Benthem, Klaus

    2012-01-01T23:59:59.000Z

    thin transition metal silicide ?lms due to their ability tothe metal ?lm and the Ni concentration at the oxide/silicidemetal can di?use to the SiO 2 /Si interface and from silicide

  6. Magnetism of NiMn2O4-Fe3O4 spinel interfaces

    E-Print Network [OSTI]

    Nelson-Cheeseman, B. B.

    2007-01-01T23:59:59.000Z

    Magnetism of NiMn 2 O 4 –Fe 3 O 4 spinel interfaces B. B.2. Element-specific magnetism of Fe 3 O 4 /NMO interface inin these structures, 6 the magnetism near the isostructural

  7. E-Print Network 3.0 - austenitic fe-cr-ni alloys Sample Search...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    than at 650C. Therefore, for these Fe-Cr-Ni model alloys, increasing... Figure 5 shows LM of the samples after 100x1h cycles at 650C for representative ... Source: Pint, Bruce...

  8. Fabrication of NiTi shape memory alloy from elemental powders by hot isostatic pressing

    E-Print Network [OSTI]

    McNeese, Matthew Doyle

    1997-01-01T23:59:59.000Z

    The research involved in this thesis was conducted to develop a procedure for producing cylindrical specimens of NiTi shape memory alloy for mechanical testing from elemental powders by hot isostatic pressing. Powders were mixed to ratios of 50...

  9. E-Print Network 3.0 - alloyed mg50 ni50 Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ti29.2Ni50.8Hf20 ... Source: Zheng, Yufeng - Department of Advanced Materials and Nanotechnology, Peking University Collection: Materials Science ; Biology and Medicine 2 J. PHYS....

  10. Characterization of LiNi?.?Mn?.?O? Thin Film Cathode Prepared by Pulsed Laser Deposition

    E-Print Network [OSTI]

    Xia, Hui

    LiNi?.?Mn?.?O? thin films have been grown by pulsed laser deposition (PLD) on stainless steel (SS) substrates. The crystallinity and structure of thin films were investigated by X-ray diffraction (XRD). Microstructure and ...

  11. Fabrication and characterization of porous NiTi Shape Memory Alloy by elevated pressure sintering

    E-Print Network [OSTI]

    Vandygriff, Eric Layton

    2012-06-07T23:59:59.000Z

    have not been adequately developed. Currently, three methods are commonly used for producing porous NiTi SMAs from elemental powders. These methods include conventional sintering, Self-propagating High-temperature Synthesis (SHS), and sintering...

  12. Thermomechanical Cyclic Response of TiNiPd High-Temperature Shape Memory Alloys

    E-Print Network [OSTI]

    Atli, Kadri

    2012-10-19T23:59:59.000Z

    TiNiPd high-temperature shape memory alloys (HTSMAs) have attracted considerable attention as potential solid-state actuators capable of operating at temperatures up to 500 °C, exhibiting excellent corrosion resistance, adequate ductility levels...

  13. Microstructure and Strengthening Mechanisms of Highly Textured Cu/Ni Multilayers

    E-Print Network [OSTI]

    Liu, Yue

    2011-10-21T23:59:59.000Z

    In this thesis, I planned to fabricate Cu/Ni metallic multilayers with equal layer thicknesses on different substrates by using magnetic sputtering technique. My objective was to characterize the texture, structure and hardness, in order to study...

  14. al-ni intermetallic compound: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    multilayer foils Jonathan C. Trenkle,1 Physics Websites Summary: August 2008 We have used self-propagating exothermic reactions in AlNi multilayers as a means to explore the...

  15. Nanostructured Ni-Co Alloys with Tailorable Grain Size and Twin Density

    E-Print Network [OSTI]

    Ferreira, Paulo J.

    grain sizes and twin densities in the Ni-Co binary system. Using electrodeposition with various applied nanocrystalline nickel. I. INTRODUCTION BULK nanocrystalline materials are characterized by a large volume

  16. Microstructures of Metallic NiCrBSi Coatings Manufactured via Hybrid Plasma Spray

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    , nanoindentation, NiCrBSi, plasma-laser hybrid process, scratch testing 1. Introduction Electrodeposited hard, uniform microstructure, high hardness, and highly adhesive bonding to the substrate (Ref 8). Nickel

  17. Electrodeposition of corrosion-resistant Ni-Zn alloy. I. Cyclic voltammetric study

    SciTech Connect (OSTI)

    Lin, Yu-Po; Selman, J.R. (Illinois Inst. of Technology, Chicago (United States))

    1993-05-01T23:59:59.000Z

    The interaction between different reacting species involved in the initial stage of electrodeposition of nickel-zinc alloy was investigated. A cyclic voltammetric study indicates that codeposition of hydrogen and nickel occurs, with formation of two types of hydrogen-nickel solid solution, i.e., [beta]-Ni and [alpha]-Ni. This nickel hydride formation during Ni-Zn alloy electrodeposition was verified by analyzing the voltammograms of nickel, zinc, and Ni-Zn alloy during initial deposition on various substrates. The dissolution potential of zinc and nickel from electrodeposited nickel-zinc alloy spans a wide range (ca. 400 mV). The influence of the interaction between nickel, hydrogen, and zinc on the nucleation of nickel-zinc electrodeposition is reported in part II of this paper.

  18. Absence of long-range chemical ordering in equimolar FeCoCrNi

    SciTech Connect (OSTI)

    Lucas, M. S. [Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States); UTC Inc., 1270 North Fairfield Road, Dayton, Ohio 45432 (United States); Wilks, G. B.; Senkov, O. N. [Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States); UES, Inc., 4401 Dayton-Xenia Rd., Dayton, Ohio 45432 (United States); Mauger, L.; Munoz, J. A. [California Institute of Technology, W. M. Keck Laboratory 138-78, Pasadena, California 91125 (United States); Michel, E. [Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States); Wright State University, Dayton, Ohio 45435 (United States); Horwath, J.; Semiatin, S. L. [Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433 (United States); Stone, M. B.; Abernathy, D. L. [Oak Ridge National Laboratory, 1, Bethel Valley Road, Oak Ridge, Tennessee 37831 (United States); Karapetrova, E. [Argonne National Laboratory, Argonne, Illinois 60439 (United States)

    2012-06-18T23:59:59.000Z

    Equimolar FeCoCrNi alloys have been the topic of recent research as 'high-entropy alloys,' where the name is derived from the high configurational entropy of mixing for a random solid solution. Despite their name, no systematic study of ordering in this alloy system has been performed to date. Here, we present results from anomalous x-ray scattering and neutron scattering on quenched and annealed samples. An alloy of FeNi{sub 3} was prepared in the same manner to act as a control. Evidence of long-range chemical ordering is clearly observed in the annealed FeNi{sub 3} sample from both experimental techniques. The FeCoCrNi sample given the same heat treatment lacks long-range chemical order.

  19. Absence of long-range chemical ordering in equimolar FeCoCrNi

    SciTech Connect (OSTI)

    Lucas, Matthew [Air Force Research Laboratory, Wright-Patterson AFB, OH; Wilks, G B [Air Force Research Laboratory, Wright-Patterson AFB, OH; Mauger, L [W. M. Keck Laboratory, Pasadena, CA; Munoz, Jorge A. [California Institute of Technology, Pasadena; Senkov, Oleg [ORNL; Michel, E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Horwath, J [Air Force Research Laboratory, Wright-Patterson AFB, OH; Semiatin, S L [Air Force Research Laboratory, Wright-Patterson AFB, OH; Stone, Matthew B [ORNL; Abernathy, Douglas L [ORNL; Karapetrova, Evgenia [University of Illinois, Urbana-Champaign

    2012-01-01T23:59:59.000Z

    Equimolar FeCoCrNi alloys have been the topic of recent research as high-entropy alloys, where the name is derived from the high configurational entropy of mixing for a random solid solution. Despite their name, no systematic study of ordering in this alloy system has been performed to date. Here we present results from anomalous x-ray scattering and neutron scattering on quenched and annealed samples. An alloy of FeNi3 was prepared in the same manner to act as a control. Evidence of longrange chemical ordering is clearly observed in the annealed FeNi3 sample from both experimental techniques. The FeCoCrNi sample given the same heat treatment lacks long-range chemical order.

  20. Hydrogen absorption characteristics of amorphous LaNi[sub 5. 0] films prepared by reactive sputtering

    SciTech Connect (OSTI)

    Sakaguchi, H.; Tsujimoto, T.; Adachi, Ginya (Osaka University, Suita (Japan))

    1993-01-01T23:59:59.000Z

    Amorphous LaNi[sub 5] thin films are expected to be one of the promising materials for use in hydrogen separation and battery electrodes, because the durability of the films is great in regard to the hydrogen absorption-desorption cycling process and the films have excellent resistance to harmful impurities in the hydrogen gas in comparison with the crystalline bulk material. An amorphous LaNi[sub 5.0] film having high hydrogen density and low hydrogen-induced stress was obtained by means of a reactive sputtering method using an Ar-H[sub 2] gas mixture. Pressure-composition isotherms show that the amount of hydrogen (H/LaNi[sub 5.0]) taken up by a formula weight of LaNi[sub 5.0] is about 1.5 times larger for the reactive sputtered film than for the conventional sputtered film prepared by using Ar gas. 18 refs., 1 fig, 1 tabs.