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1

Magnetoelastic Coupling in NiMnGa Ferromagnetic Shape ...  

Science Conference Proceedings (OSTI)

... Magnetoelastic Coupling in NiMnGa Ferromagnetic Shape Memory Alloys. Peng Zhao (Dept. of Materials Science and ...

2

Solidification and Microstructure Evaluation of the Ni-Ga and Co-Ni ...  

Science Conference Proceedings (OSTI)

Ni-Ga binary system is thus one of the basic binary system which forms the dominated ? ... The Effects of Natural and Marangoni Convection on the Resultant ...

3

PMC-EfZa  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

PMC-EfZa PMC-EfZa 0""':' u.s DEPAR TIlIENT OFI!NERGY EERE PROJECT MANACoEMENTCENTER Nl!PA DI!TI!R}.nNATION RECIPJENT:South Dakota State University PROJECT TITLE: Regional Biomass Feedstock Partnership FY11 Page 1 of2 ~ VfjJ STATE: SD Funding Opportunity Announcement Number Pr(l('urement Instrument Number NEPA Control Number CID Number G085041 GFQ-G085041-086 0 Based on my ~view oftbe infor mation concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 451,tA),1 have made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (including, but not limited 10, literature surveys, inventones, audits), data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply and

4

Large energy absorption in Ni-Mn-Ga/polymer composites  

SciTech Connect

Ferromagnetic shape memory alloys can respond to a magnetic field or applied stress by the motion of twin boundaries and hence they show large hysteresis or energy loss. Ni-Mn-Ga particles made by spark erosion have been dispersed and oriented in a polymer matrix to form pseudo 3:1 composites which are studied under applied stress. Loss ratios have been determined from the stress-strain data. The loss ratios of the composites range from 63% to 67% compared to only about 17% for the pure, unfilled polymer samples.

Feuchtwanger, Jorge; Richard, Marc L.; Tang, Yun J.; Berkowitz, Ami E.; O'Handley, Robert C.; Allen, Samuel M. [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); University of California, San Diego, La Joya, California 92093 (United States); Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2005-05-15T23:59:59.000Z

5

Computational Thermodynamics of CoNiGa High Temperature Shape Memory Alloys  

E-Print Network (OSTI)

Shape Memory Alloys (SMAs) are advanced materials with interesting properties such as pseudoelasticity (PE) and the shape memory effect (SME). Recently, the CoNiGa system has emerged as the basis for very promising High Temperature Shape Memory Alloys (HTSMAs), with possible applications in the aerospace and automotive industries. Although the CoNiGa system shows significant promise for its use as HTSMAs, limited studies are available on them. Hence, a more intensive investigation of these alloys is necessary to understand their phase stability over a wide range of temperature and compositions in order for further development of CoNiGabased HTSMAs and future use of the model in alloy design. This formed the basis of motivation for the present work. In this work, a thermodynamic model of the ternary system is calculated based on the CALPHAD approach, to investigate the thermodynamic properties, phase stability and shape memory properties of these alloys. The CALPHAD approach is a computational method that enables the calculations of thermodynamic properties of systems. This method uses all available experimental and theoretical data in order to calculate the Gibbs energies of the phases in the system. The software used to carry out the calculations is "ThermoCalc," which is a computational software using CALPHAD principles, based on the minimization of Gibbs energy, and is enhanced by a global minimization technique on the system. The stability of the beta phase at high temperatures was enforced accurately by remodeling the CoGa system. The binary CoGa system that makes up the ternary was remodeled, as the beta phase (which is very important as it dominates the central region of the ternary CoNiGa system where the shape memory effect is observed), re-stabilizes as the temperature increases above the liquidus in the CoGa system. Phase relations and thermodynamic properties of the CoNiGa system based on all experimental information were evaluated. Different properties like enthalpies, activities, sublattice site fraction of vacancies and phase fractions calculated in the system matched well compared to the experimental information used to model the system. Also, the phase equilibria among the gamma (fcc), beta, gamma'(Ni3Ga), delta (Ni5Ga3) and epsilon (Ni13Ga9) were determined at various temperatures.

Chari, Arpita

2011-08-01T23:59:59.000Z

6

Room-temperature diluted magnetic semiconductors p-(Ga,Ni)N  

SciTech Connect

High concentration (5 at. %) Ni was incorporated into a chemical vapor deposition-grown GaN film by using a thin protecting Ni layer on top of the GaN film during ion implantation. After etching off the protecting layer, subsequent annealing up to 800 deg. C under flowing N{sub 2} resulted in a p-type GaN with apparent ferromagnetic behavior up to {approx}320 K. In addition, the ferromagnetic behavior became more manifest with increasing annealing temperature that increases hole concentration. No presence of any other second phases nor clusters in the Ni-implanted region was identifiable, at least to the 0.2 nm point-to-point resolution of high resolution transmission electron microscopy. This novel indirect implantation process that being easy to implement appears promising for attaining room-temperature diluted magnetic semiconductors which are applicable to magnetotransport, magneto-optical and spintronics devices, among others.

Huang, R.-T.; Hsu, C.-F.; Kai, J.-J.; Chen, F.-R.; Chin, T.-S. [Department of Engineering and System Science, National Tsing-Hua University, Hsinchu 300, Taiwan (China); Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 300, Taiwan (China)

2005-11-14T23:59:59.000Z

7

Modulation on Ni{sub 2}MnGa(001) surface  

SciTech Connect

We report periodic modulation on (001) surface of Ni2MnGa ferromagnetic shape memory alloy. For the stoichiometric surface, analysis of the low energy electron diffraction (LEED) spot profiles shows that the modulation is incommensurate. The modulation appears at 200 K, concomitant with the first order structural transition to the martensitic phase.

D'Souza, S. W.; Rai, Abhishek; Nayak, J.; Maniraj, M.; Dhaka, R. S.; Barman, S. R.; Schlagel, D. L.; Lograsso, T. A. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, 452001, Madhya Pradesh (India); Ames Laboratory U. S. DOE, Iowa State University, Ames, Iowa 50011-3020 (United States)

2011-07-15T23:59:59.000Z

8

Powder Metallurgy Processing of Replicated Ni-Mn-Ga Foams  

Science Conference Proceedings (OSTI)

Development of a SMA-Based Drive Unit for Prehension Orthoses to Support Disabled People · Effect of H in Metals and Alloys: An Application to bcc W and NiTi ...

9

Diffusion in L12 Structures: A Comparison of Ni3Al, Ni3Ga and Ni3Ge  

Science Conference Proceedings (OSTI)

... that while the diffusivities of the majority component Ni in these compounds are similar, ... First Order Structural Transformations in Symmetrical Tilt S5 Grain ...

10

Mn deposition on Ni{sub 2}MnGa(100)  

Science Conference Proceedings (OSTI)

We report the study of Mn adlayers on a Mn deficient Ni{sub 2}MnGa(100) surface by using low energy electron diffraction (LEED). The spot profile analysis indicates that after 0.2 monolayer (ML) deposition, the LEED spots become very sharp. This pattern indicates the removal of Mn vacancies formed on the surface due to Mn deficiency. But with further growth of Mn layers on this surface, the LEED spots become broad.

Nayak, J.; Rai, Abhishek; D'Souza, S. W.; Maniraj, M.; Barman, S. R. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, 452001, M.P. (India)

2012-06-05T23:59:59.000Z

11

NEUTRON DIFFRACTION STUDY OF A NON-STOICHIOMETRIC Ni-Mn-Ga MSM ALLOY  

SciTech Connect

The structure and chemical order of a Heusler alloy of non-stoichiometric composition Ni-Mn-Ga were studied using constant-wavelength (1.538 ) neutron diffraction at 363K and the diffraction pattern was refined using the FullProf software. At this temperature the structure is austenite (cubic) with Fm-3m space group and lattice constant of a = 5.83913(4) [ ]. The chemical order is of critical importance in these alloys, as Mn becomes antiferromagnetic when the atoms are closer than the radius of the 3d shell. In the studied alloy the refinement of the site occupancy showed that the 4b (Ga site) contained as much as 22% Mn; that significantly alters the distances between the Mn atoms in the crystal and, as a result, also the exchange energy between some of the Mn atoms. Based on the refinement, the composition was determined to be Ni1.91Mn1.29Ga0.8

Ari-Gur, Pnina [Western Michigan University; Garlea, Vasile O [ORNL

2013-01-01T23:59:59.000Z

12

Magnetic field-induced phase transformation and variant reorientation in Ni2MnGa and NiMnCoIn magnetic shape memory alloys  

E-Print Network (OSTI)

The purpose of this work is to reveal the governing mechanisms responsible for the magnetic field-induced i) martensite reorientation in Ni2MnGa single crystals, ii) stress-assisted phase transformation in Ni2MnGa single crystals and iii) phase transformation in NiMnCoIn alloys. The ultimate goal of utilizing these mechanisms is to increase the actuation stress levels in magnetic shape memory alloys (MSMAs). Extensive experimental work on magneto-thermo-mechanical (MTM) characterization of these materials enabled us to i) better understand the ways to increase the actuation stress and strain and decrease the required magnetic field for actuation in MSMAs, ii) determine the effects of main MTM parameters on reversible magnetic field induced phase transformation, such as magnetocrystalline anisotropy energy (MAE), Zeeman energy (ZE), stress hysteresis, thermal hysteresis, critical stress for the stress induced phase transformation and crystal orientation, iii) find out the feasibility of employing polycrystal MSMAs, and iv) formulate a thermodynamical framework to capture the energetics of magnetic field-induced phase transformations in MSMAs. Magnetic shape memory properties of Ni2MnGa single crystals were characterized by monitoring magnetic field-induced strain (MFIS) as a function of compressive stress and stress-induced strain as a function of magnetic field. It is revealed that the selection of the operating temperature with respect to martensite start and Curie temperatures is critical in optimizing actuator performance. The actuation stress of 5 MPa and work output of 157 kJm?3 are obtained by the field-induced variant reorientation in NiMnGa alloys. Reversible and one-way stress-assisted field-induced phase transformations are observed in Ni2MnGa single crystals under low field magnitudes (transformation and shape memory characteristics of NiMnCoIn single crystals are also studied. Reversible field-induced phase transformation is observed only under high magnetic fields (>4T). Necessary magnetic and mechanical conditions, and materials design and selection guidelines are proposed to search for field-induced phase transformation in other ferromagnetic materials that undergo thermoelastic martensitic phase transformation.

Karaca, Haluk Ersin

2007-08-01T23:59:59.000Z

13

Exact Enumeration of the Phase Space of an Ising Model of Ni2MnGa  

Science Conference Proceedings (OSTI)

Exact evaluations of partition functions are generally prohibitively expensive due to exponential growth of phase space with the number of degrees of freedom. For an Ising model with sites the number of possible states is requiring the use of better scaling methods such as importance sampling Monte-Carlo calculations for all but the smallest systems. Yet the ability to obtain exact solutions for as large as possible systems can provide important benchmark results and opportunities for unobscured insight into the underlying physicsofthesystem.HerewepresentanIsingmodelforthemagneticsublatticesoftheimportantmagneto-caloricmaterialNi MnGa and use an exact enumeration algorithm to calculate the number of states for each energy and sublattice magne- tizations and . This allows the efficient calculation of the partition function and derived thermodynamic quantities such as specific heat and susceptibility. Utilizing the jaguarpf system at Oak Ridge we are able to calculate for systems of up to48sites,whichprovidesimportantinsightintothemechanismforthelargemagnet-caloriceffectinNi MnGaaswellasanimportant benchmark for Monte-Carlo (esp. Wang-Landau method).

Eisenbach, Markus [ORNL; Brown, Greg [ORNL; Rusanu, Aurelian [ORNL; Odbadrakh, Khorgolkhuu [ORNL; Nicholson, Don M [ORNL; McCarthy, Carrie V. [University of Georgia, Athens, GA

2013-01-01T23:59:59.000Z

14

Comparison of dc performance of Pt/Ti/Au- and Ni/Au-Gated AlGaN/GaN High Electron Mobility Transistors  

Science Conference Proceedings (OSTI)

We have demonstrated significant improvements of AlGaN/GaN High Electron Mobility Transistors (HEMTs) dc performance by employing Pt/Ti/Au instead of the conventional Ni/Au gate metallization. During off-state bias stressing, the typical critical voltage for HEMTs with Ni/Au gate metallization was ~ -45 to -65V. By sharp contrast, no critical voltage was observed for HEMTs with Pt/Ti/Au gate metallization, even up to -100V, which was the instrumental limitation in this experiment. After the off-state stressing, the drain current of Ni/Au gated-HEMTs decreased by~ 15%. For the Pt-gate HEMTs, no degradation of the drain current occurred and there were minimal changes in the Schottky gate characteristics for both forward and reverse bias conditions. The HEMTs with Pt/Ti/Au metallization showed an excellent drain on/off current ratio of 1.5 108. The on/off drain current ratio of Ni-gated HEMTs was dependent on the drain bias voltage and ranged from 1.2 107 at Vds=5V and 6 105

Liu, L. [University of Florida, Gainesville; Lo, C. F. [University of Florida; Kang, Tsung Sheng [University of Florida, Gainesville; Pearton, S. J. [University of Florida; Kravchenko, Ivan I [ORNL; Laboutin, O. [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Ren, F. [University of Florida

2011-01-01T23:59:59.000Z

15

The ZaP Flow Z-Pinch Project  

Science Conference Proceedings (OSTI)

The results from the ZaP experiment are consistent with the theoretical predictions of sheared flow stabilization. Z pinches with a sheared flow are generated in the ZaP experiment using a coaxial accelerator coupled to an assembly region. The current sheet in the accelerator initially acts as a snowplow. As the Z pinch forms, plasma formation in the accelerator transits to a deflagration process. The plasma exits the accelerator and maintains the flow in the Z pinch. During the quiescent period in the magnetic mode activity at z=0 cm, a stable Z pinch is seen on the axis of the assembly region. The evolution of the axial velocity profile shows a large velocity shear is measured at the edge of the Z pinch during the quiescent period. The velocity shear is above the theoretical threshold. As the velocity shear decreases towards 0.1kV{sub A}, the predicted stability threshold, the quiescent period ends. The present understanding of the ZaP experiment shows that it may be possible for the Z pinch to operate in a steady state if the deflagration process can be maintained by constantly supplying neutral gas or plasma to the accelerator.

Shumlak, U.; Nelson, B. A.

2005-09-01T23:59:59.000Z

16

Lighting Enhancement of GaN LEDs by Applying p-Type Ni(P):SnO2 ...  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, Materials Science & Technology 2013. Symposium, Multifunctional Oxides. Presentation Title, Lighting Enhancement of GaN LEDs ...

17

In-Situ Observation of the Stress-Induced Stochastic Twin Boundary Motion in off Stoichiometric NiMnGa Single Crystal  

Science Conference Proceedings (OSTI)

Stochastic motion of the type II twin boundary in off stoichiometric NiMnGa single crystal is confirmed by in-situ X-ray microdiffraction during external stress field loading. Assymmetry between tensile and compressive parts of the loading and large hysteresis loop is found. Formation of local strained regions is predecessing each boundary movement. The location of strained regions adjusts to the position of the twin boundary. Abrupt motion of the boundary correlates with the corresponding spikes at the load/displacement curve.

Barabash, Rozaliya [ORNL; Kirchlechner, Christoph [Max-Planck-Institut fur Eisenforschung, Germany; Robach, Odile [European Synchrotron Radiation Facility (ESRF); Sozinov, Alexei [AdaptaMat, Finland

2013-01-01T23:59:59.000Z

18

SV_Jurij.qxd 19/07/2002 08:59 Page 1 Podru`ni~na cerkev v Tacnu je posve~ena sv. Juriju, mu~encu.  

E-Print Network (OSTI)

tronu je cerkveni zavetnik sv. Jurij, rimski vojak, ki s sulico prebada zmaja. Slike za zapiranje trona ni. Ob stenah trona so stirje evangelisti: desno ob njem sv. Marko, na obhodnem loku sv. Matej, levo

Silc, Jurij

19

LICEN?NA POGODBA ZA REŠITEV BLACKBERRY ...  

Science Conference Proceedings (OSTI)

... "Strojna oprema tretje osebe" pomeni prenosne izdelke, ra?unalnik, opremo, zunanje naprave in katerokoli drugo strojno opremo, ki ni izdelek RIM. ...

2012-11-15T23:59:59.000Z

20

Ga Air Compressor, Ga Air Compressor Products, Ga Air ...  

U.S. Energy Information Administration (EIA)

Ga Air Compressor, You Can Buy Various High Quality Ga Air Compressor Products from Global Ga Air Compressor Suppliers and Ga Air Compressor ...

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

http://www.cybertracker.co.za/IntegratingKn... 1 2/10/2007 9:04 Integrating Traditional  

E-Print Network (OSTI)

follows a very simple procedure to transfer the data onto the base station PC. Karoo Pilot Project://www.cybertracker.co.za/IntegratingKn... 4 2/10/2007 9:04 Minye, for more than two years in the Karoo National Park. Although they cannot-and-arrow going from an oral tradition straight into the computer age. Kruger National Park While the Karoo

Blake, Edwin

22

China Ga Air Compressor, China Ga Air Compressor Products ...  

U.S. Energy Information Administration (EIA)

China Ga Air Compressor, China Ga Air Compressor Suppliers and Manufacturers Directory - Source a Large Selection of Ga Air Compressor Products at ...

23

Ba-Ga (Barium - Gallium)  

Science Conference Proceedings (OSTI)

Ba-Ga crystallographic data...Ba-Ga crystallographic data Phase Composition, wt% Ga Pearson symbol Space group (Ba) 0 cI 2 Im m Ba 10 Ga 4.8 cF 176 Fd m Ba 8 Ga 7 30.8 cP 60 P 2 1 3 BaGa 2 50.4 hP 3 P 6/ mmm BaGa 4 67 tI 10 I 4/ mmm (Ga) 100 hP 2 P 6 3 / mmc...

24

Cu-Ni  

Science Conference Proceedings (OSTI)

... Ternary Fe-Cu-Ni many-body potential to model reactor pressure vessel ... alloy, This file was provided by Giovanni Bonny (Nuclear Materials Science ...

2013-07-06T23:59:59.000Z

25

Magnetocaloric Effect in Ni-Mn-Ga Heusler Alloys  

Science Conference Proceedings (OSTI)

Giant Low-Field Magnetocaloric Effect with Small Hysteresis Near Room ... Large Room Temperature Magnetoresistance in FeCo-SiN Granular Films · Magnetic ...

26

Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Based Gate Metallization  

Science Conference Proceedings (OSTI)

The critical voltage for degradation of AlGaN/GaN high electron mobility transistors (HEMTs) employed with the Pt/Ti/Au gate metallization instead of the commonly used Ni/Au was significantly increased during the off-state stress. The typical critical voltage for HEMTs with Ni/Au gate metallization was around -60V. By sharp contrast, no critical voltage was observed for the HEMTs with Pt/Ti/Au gate metallization, even up to -100V, which was the instrumental limitation in this experiment. Both Schottky forward and reverse gate characteristics of the Ni/Au degraded once the gate voltage passed the critical voltage of around -60V. There was no degradation exhibited for the HEMTs with Pt-gated HEMTs.

Lo, C. F. [University of Florida; Liu, L. [University of Florida, Gainesville; Kang, Tsung Sheng [University of Florida, Gainesville; Davies, Ryan [University of Florida; Gila, Brent P. [University of Florida, Gainesville; Pearton, S. J. [University of Florida; Kravchenko, Ivan I [ORNL; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Ren, F. [University of Florida

2011-01-01T23:59:59.000Z

27

Ga-Zr (Gallium - Zirconium)  

Science Conference Proceedings (OSTI)

Ga-Zr crystallographic data...Ga 5 Zr 3 44.0 oC 32 Cmcm Ga 3 Zr 2 47 oF 40 Fdd 2 βGaZr 56.7 � � αGaZr 56.7 tI 16 I 4 1 / amd Ga 4 Zr 5 62.1 hP 18 P 6 3 / mcm Ga 2 Zr 3 66 tP 10 P 4/ mbm Ga 3 Zr 5 68.6 hP 16 P 6 3 / mcm GaZr 2 72.4 tI 12 I 4/ mcm (βZr) ~94 to 100 cI 2 Im m (αZr) 99.4 to 100 hP 2 P 6 3 / mmc...

28

Power Conversion Efficiency of AlGaAs/GaAs Schottky Diode for Low-Power On-Chip Rectenna Device Application  

Science Conference Proceedings (OSTI)

A Schottky diode has been designed and fabricated on n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences of Schottky barrier height from theoretical value are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are well rectified by the fabricated Schottky diodes and stable DC output voltage is obtained. Power conversion efficiency up to 50% is obtained at 1 GHz with series connection between diode and load. The fabricated the n-AlGaAs/GaAs Schottky diode provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd [Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai (Malaysia); Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, 81310 Skudai Johor Malaysia (Malaysia); Osman, Mohd Nizam [Telekom Research and Development, TM Innovation Centre, 63000 Cyberjaya (Malaysia)

2011-05-25T23:59:59.000Z

29

Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy  

Science Conference Proceedings (OSTI)

Ti/Al/Ni/Au ohmic contacts were formed on heavily doped n{sup +} metal-polar GaN samples with various Si doping concentrations grown by molecular beam epitaxy. The contact resistivity (R{sub C}) and sheet resistance (R{sub sh}) as a function of corresponding GaN free carrier concentration (n) were measured. Very low R{sub C} values (electron mobility transistors.

Afroz Faria, Faiza; Guo Jia; Zhao Pei; Li Guowang; Kumar Kandaswamy, Prem; Wistey, Mark; Xing Huili; Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Indiana 46556 (United States)

2012-07-16T23:59:59.000Z

30

AlGaN/GaN-based power semiconductor switches  

E-Print Network (OSTI)

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

31

Polarization-engineered GaN/InGaN/GaN tunnel diodes  

E-Print Network (OSTI)

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan

2010-08-24T23:59:59.000Z

32

GaAs ohmic contacts for high temperature devices  

DOE Green Energy (OSTI)

Instrumentation requirements for geothermal wells, jet engines, and nuclear reactors have exceeded the high temperature capability of silicon devices. As one part of a program to develop high temperature compound semiconductor devices, four basic ohmic contact systems for n-type GaAs have been evaluated for contact resistance as a function of temperature (24 to 350/sup 0/C) and time (at 300/sup 0/C): Ni/AuGe; Ag/Si and Ag/Ni/Si; Al/Ge and Al/AlGe; and Au/Nb/Si and Pt/Nb/Si. Optimization of processing parameters produced viable high temperature contacts with all but the Al/Ge systems. Aging at 300/sup 0/C changed the contact resistivity in only the Ag/Ni/Si contacts. Film adhesion was excellent for the Al/Ge, Ni/AuGe, and Ag/Si systems as measured with ultrasonic Al wire bond pull strengths. Lower adhesion was noticed with Nb/Si systems measured with gold wire bond pull strengths.

Coquat, J.A.; Palmer, D.W.

1980-01-01T23:59:59.000Z

33

GaN High Power Devices  

SciTech Connect

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

34

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

35

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

36

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name GA-SNC Solar Place Nevada Sector Solar Product Nevada-based PV project developer and joint venture of GA-Solar North America and...

37

Ni-Zr (Nickel - Zirconium)  

Science Conference Proceedings (OSTI)

Ni-Zr crystallographic data...99.9 to 100 hP 2 P 6 3 / mmc (a) Triclinic. (b) Stoichiometric. (c) Zr-rich...

38

Imaging Chemical Aggregation of Ni/NiO Particles from Reduced NiO-YSZ  

SciTech Connect

Energy dispersive X-ray spectroscopy (EDS) mapping of nickel oxide yttria-stabilized zirconia (NiO-YSZ) was carried out after various hydrogen reducing and methane steam reforming conditions. Nickel aggregation was visualized after methane steam reforming by correlating Ni K{sub {alpha}} map with scanning transmission electron microscopy (STEM) images. From the reduced O K{sub {alpha}} intensities in the Ni K{sub {alpha}} dominated regions after methane steam reforming, NiO reduction in to Ni can be interpreted. From correlation between Zr K{sub {alpha}} and O K{sub {alpha}} maps, high stability of YSZ was also realized. Examples of NiO-YSZ overlapped particles are considered to discuss chemical imaging of a single particle.

Saraf, Laxmikant V.

2011-07-20T23:59:59.000Z

39

Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures  

Science Conference Proceedings (OSTI)

The atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures were studied. It was shown that the deposition of GaAs of the same nominal thickness leads to the formation of pseudomorphic GaAs/GaP quantum wells (QW), fully relaxed GaAs/GaP self-assembled quantum dots (SAQDs), or pseudomorphic GaAsP/GaP SAQDs depending on the growth temperature. We demonstrate that the atomic structure of Ga(As,P)/GaP heterostructures is ruled by the temperature dependence of adatom diffusion rate and GaAs-GaP intermixing. The band alignment of pseudomorphic GaAs/GaP QW and GaAsP/GaP SAQDs is shown to be of type II, in contrast to that of fully relaxed GaAs/GaP SAQDs, which have the band alignment of type I with the lowest electronic states at the indirect L valley of the GaAs conduction band.

Abramkin, D. S.; Putyato, M. A.; Budennyy, S. A.; Gutakovskii, A. K.; Semyagin, B. R.; Preobrazhenskii, V. V.; Shamirzaev, T. S. [A. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Pr. Lavrentyeva 13, 630090 Novosibirsk (Russian Federation); Kolomys, O. F.; Strelchuk, V. V. [V. E. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, Pr. Nauki 41, 03028 Kiev (Ukraine)

2012-10-15T23:59:59.000Z

40

General Atomics (GA) Fusion News: A New Spin on Understanding...  

NLE Websites -- All DOE Office Websites (Extended Search)

General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement American Fusion News Category: General Atomics (GA) Link: General Atomics (GA) Fusion News: A New...

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Rodefeld Landfill Ga Biomass Facility | Open Energy Information  

Open Energy Info (EERE)

Rodefeld Landfill Ga Biomass Facility Jump to: navigation, search Name Rodefeld Landfill Ga Biomass Facility Facility Rodefeld Landfill Ga Sector Biomass Facility Type Landfill Gas...

42

RECIPIENT:Gwinnett Co, GA  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

43

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

44

Influence of nuclear structure on sub-barrier hindrance in Ni+Ni fusion  

E-Print Network (OSTI)

Fusion-evaporation cross sections for $^{64}$Ni+$^{64}$Ni have been measured down to the 10 nb level. For fusion between two open-shell nuclei, this is the first observation of a maximum in the $S$-factor, which signals a strong sub-barrier hindrance. A comparison with the $^{58}$Ni+$^{58}$Ni, $^{58}$Ni+$^{60}$Ni, and $^{58}$Ni+$^{64}$Ni systems indicates a strong dependence of the energy where the hindrance occurs on the stiffness of the interacting nuclei.

C. L. Jiang; K. E. Rehm; R. V. F. Janssens; H. Esbensen; I. Ahmad; B. B. Back; P. Collon; C. N. Davids; J. P. Greene; D. J. Henderson; G. Mukherjee; R. C. Pardo; M. Paul; T. O. Pennington; D. Seweryniak; S. Sinha; Z. Zhou

2004-02-25T23:59:59.000Z

45

Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures  

Science Conference Proceedings (OSTI)

GaAsBi/GaAs/AlGaAs separate confinement heterostructures are grown using an asymmetric temperature profile due to the low optimal growth temperature of GaAsBi; the bottom AlGaAs barrier is grown at 610 Degree-Sign C, while the GaAsBi quantum well and the top AlGaAs barrier are grown at 320 Degree-Sign C. Cross-sectional transmission electron microscopy and room temperature photoluminescence measurements indicate that this approach results in samples with excellent structural and optical properties. The high quality of the low temperature AlGaAs barrier is attributed to the presence of Bi on the surface as indicated by a (1 Multiplication-Sign 3) surface reconstruction persisting throughout the low temperature growth.

Fan Dongsheng; Yu Shuiqing [Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Zeng Zhaoquan; Hu Xian; Dorogan, Vitaliy G.; Li Chen; Benamara, Mourad; Hawkridge, Michael E.; Mazur, Yuriy I.; Salamo, Gregory J. [Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Johnson, Shane R. [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287-6206 (United States); Wang, Zhiming M. [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)

2012-10-29T23:59:59.000Z

46

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

DOE Green Energy (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

47

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells  

E-Print Network (OSTI)

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells I. Friel, C online 20 June 2005 An ultraviolet electroabsorption modulator based on AlGaN/GaN quantum wells is demonstrated. Enhanced excitonic absorption in the quantum wells at around 3.48 eV was achieved using

Moustakas, Theodore

48

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network (OSTI)

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

49

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

Science Conference Proceedings (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

50

Neutron Imaging @ SNS (NI@SNS 2008)  

NLE Websites -- All DOE Office Websites (Extended Search)

Neutron Imaging at SNS Workshop (NI@SNS 2008) November 3, 2008 * Building 8600, Central Laboratory & Office Building * Oak Ridge, TN 37831 NI@SNS2008 home Neutron Imaging Agenda...

51

SF 6432-NI (02-22-10)  

interpreted in accordance with laws of New Mexico, and, where appropriate, the United States federal law. NI03 – ASSIGNMENT

52

Chromium Grain-boundary Segregation and Effect of Ion Beam Cleaning on Fe-Ni-Cr Alloys  

SciTech Connect

The grain boundaries play important role to control the mechanical strength of ternary alloys. From spacecrafts to naval vessels to nuclear reactors, stress corrosion cracking, brittleness, oxidation mostly originates at the grain boundaries and cause long term structural stability problems in most of the metallic structures [1]. Fe-Ni-Cr based ternary metal alloys have been widely studied for more than fifty years [2, 3]. Despite of vast amount of research, chromium diffusion in stainless steel or other Ni-Fe-Cr based ternary alloys is still an open scientific problem with challenges in structural stability and corrosion resistance [4]. Particularly, austenite Fe-Ni-Cr is looked upon favorably in space and jet engine industry for their improved resistance to stress corrosion cracking [5]. In solid oxide fuel cells (SOFC), Ni-alloys are frequently used as interconnects and seals [6]. In this communication, simultaneous energy dispersive spectroscopy (EDS) and electron backscatter diffraction (EBSD) mapping is utilized to study chemical and structural aspects of chromium segregation in Fe-Ni-Cr alloy. A focused Ga-ion beam is also utilized to study the effect of ion beam cleaning on EBSD image quality (IQ) and inverse pole figure (IPF) maps of Fe-Ni-Cr alloy.

Saraf, Laxmikant V.

2011-04-01T23:59:59.000Z

53

Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures  

Science Conference Proceedings (OSTI)

Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

2012-12-24T23:59:59.000Z

54

Rare-earth chromium gallides RE{sub 4}CrGa{sub 12} (RE=Tb-Tm)  

Science Conference Proceedings (OSTI)

The ternary rare-earth-metal chromium gallides RE{sub 4}CrGa{sub 12} (RE=Tb-Tm) have been prepared by reactions of the elements at 1000 Degree-Sign C in the presence of excess gallium used as a self-flux. Their structures are derived by inserting Cr atoms into a quarter of the empty Ga{sub 6} octahedral clusters found in the parent binary gallides REGa{sub 3} (AuCu{sub 3}-type), although single-crystal X-ray diffraction studies suggest that complex superstructures may be adopted. An ideal ordered Y{sub 4}PdGa{sub 12}-type structure was successfully refined for a crystal of Dy{sub 4}CrGa{sub 12} (Pearson symbol cI34, space group Im3{sup Macron }m, Z=2, a=8.572(1) A). Magnetic measurements on single-crystal samples reveal ferromagnetic or possibly ferrimagnetic ordering for the Tb, Dy, and Er members (T{sub C}=22, 15, and 2.8 K, respectively) and antiferromagnetic ordering for the Ho member (T{sub N}=7.5 K). Band structure calculations on a hypothetical 'Y{sub 4}CrGa{sub 12}' model suggest that the Cr atoms carry no local magnetic moment. - Graphical abstract: RE{sub 4}CrGa{sub 12} is derived by inserting Cr atoms into empty Ga{sub 6} octahedral clusters present in the parent binary gallides REGa{sub 3}. Highlights: Black-Right-Pointing-Pointer RE{sub 4}MGa{sub 12} (previously known for M=Fe, Ni, Pd, Pt, Ag) has been extended to M=Cr. Black-Right-Pointing-Pointer RE{sub 4}CrGa{sub 12} compounds show predominantly ferromagnetic ordering. Black-Right-Pointing-Pointer Band structure calculations suggest that Cr atoms carry no local magnetic moment.

Slater, Brianna R.; Bie, Haiying; Stoyko, Stanislav S. [Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G 2G2 (Canada)] [Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G 2G2 (Canada); Bauer, Eric D.; Thompson, Joe D. [Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)] [Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Mar, Arthur, E-mail: arthur.mar@ualberta.ca [Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G 2G2 (Canada)] [Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G 2G2 (Canada)

2012-12-15T23:59:59.000Z

55

InGaAsN/GaAs heterojunction for multi-junction solar cells  

DOE Patents (OSTI)

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

2001-01-01T23:59:59.000Z

56

W and WSi(x) Ohmic Contacts on p- And n-Type GaN  

SciTech Connect

W and WSi ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300-1000 *C. There is minimal reaction (< 100 ~ broadening of the metal/GaN interface) even at 1000 *C. Specific contact resistances in the 10-5 f2-cm2 range are obtained for WSiX on Si-implanted GaN with a peak doping concentration of- 5 x 1020 cm-3, after annealing at 950 `C. On p-GaN, leaky Schottky diode behavior is observed for W, WSiX and Ni/Au contacts at room temperature, but true ohmic characteristics are obtained at 250 - 300 *C, where the specific contact resistances are typically in the 10-2 K2-cm2 range. The best contacts for W and WSiX are obtained after 700 *C annealing for periods of 30- 120 sees. The formation of &WzN interracial phases appear to be important in determining the contact quality.

Abernathy, C.R.; Cao, X.A.; Eizenberg, M.; Han, J.; Lothian, J.R.; Pearton, S.J.; Ren, F.; Shul, R.J.; Zeitouny, A.; Zolper, J.C.

1998-10-13T23:59:59.000Z

57

Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)  

SciTech Connect

Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dang Duc Dung [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi (Viet Nam); Vo Thanh Son [Centers for Nanobioenineering and Spintronics, Chungnam National University, Daejon 350-746 (Korea, Republic of)

2012-04-01T23:59:59.000Z

58

Relativity and Magnetism in Ni-Pd and Ni-Pt Alloys Abstract  

E-Print Network (OSTI)

We show that the differences in the magnetic properties of Ni-Pd and Ni-Pt alloys arise mainly due to relativity. In particular, we find that the local magnetic moment of Ni increases with the addition of Pd in Ni-Pd while it decreases with the addition of Pt in Ni-Pt, as found experimentally, only if relativity is present. Our analysis is based on the effects of relativity on (i) the spin-polarized densities of states of Ni, (ii) the splitting of majority and minority spin d-band centers of Ni, and (iii) the separation between s-d band centers of Pd and Pt in Ni-Pd and Ni-Pt alloys. 1

Prabhakar P. Singh

2002-01-01T23:59:59.000Z

59

passivation of InGaN/GaN nanopillar light emitting diodes.  

E-Print Network (OSTI)

??Recently, InGaN/GaN based blue light emitting diodes (LEDs) have become widely available commercially, but their efficiency is reduced due to the quantum confined Stark effect… (more)

Choi, Won

2013-01-01T23:59:59.000Z

60

Detailed Analysis of Temperature Characteristics of InGaP/InGaAs ...  

Science Conference Proceedings (OSTI)

The current-voltage (I-V) characteristics of single-junction solar cells (InGaP, InGaAs, Ge solar cells) were measured at various temperatures. The structures of  ...

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy  

SciTech Connect

The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

C.A. Wang; C.J. Vineis; D.R. Calawa

2002-02-13T23:59:59.000Z

62

GA 30+-90 / GA 37-90 VSD: Oil-injected rotary screw ...  

U.S. Energy Information Administration (EIA)

GA 30+-90 / GA 37-90 VSD: Oil-injected rotary screw compressors, 30-90 kW / 40-125 hp,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading air ...

63

GA 11+-30/GA 15-30 VSD: Oil-injected rotary screw compressors ...  

U.S. Energy Information Administration (EIA)

GA 11+-30/GA 15-30 VSD: Oil-injected rotary screw compressors, 11-30 kW / 15-40 hp,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading air ...

64

GA 90+-160+ / GA 110-160 VSD: Oil-injected rotary screw ...  

U.S. Energy Information Administration (EIA)

GA 90+-160+ / GA 110-160 VSD: Oil-injected rotary screw compressors, 90-160 kW / 125-200 hp.,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading ...

65

Room temperature green light emission from nonpolar cubic InGaN/GaN multi-quantum-wells  

E-Print Network (OSTI)

Room temperature green light emission from nonpolar cubic InGaN/GaN multi-quantum-wells Shunfeng Li Cubic InGaN/GaN multi-quantum-wells MQWs with high structural and optical quality are achieved by utilizing freestanding 3C-SiC 001 substrates and optimizing InGaN quantum well growth. Superlattice peaks up

As, Donat Josef

66

Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT  

Science Conference Proceedings (OSTI)

Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

Lenka, T. R., E-mail: trlenka@gmail.com; Panda, A. K., E-mail: akpanda62@hotmail.com [National Institute of Science and Technology, Palur Hills (India)

2011-05-15T23:59:59.000Z

67

Quantized states in homogenous polarized GaInN GaN quantum wells  

E-Print Network (OSTI)

Quantized states in homogenous polarized GaInN GaN quantum wells C. Wetzel1, S. Kamiyama1, H. Amano wells is calculated in a single particle model. The act- ing electric eld in the wells and the band gap-dimensional well layers our approach is based on induction from results obtained at the binary GaN barri- ers

Wetzel, Christian M.

68

PIEZOELECTRIC LEVEL SPLITTING IN GaInN/GaN QUANTUM WELLS  

E-Print Network (OSTI)

PIEZOELECTRIC LEVEL SPLITTING IN GaInN/GaN QUANTUM WELLS C. Wetzel, T. Takeuchi, H. Amano, and IInN/GaN multiple quantum well samples in a large set of variable composition a clear correspondence of transitions in photo- and electroreflection, as well as photoluminescence is found. The effective band offset across

Wetzel, Christian M.

69

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells  

E-Print Network (OSTI)

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells Marcus Eickhoff* and Dieter Suter, nanometer-sized quantum wells possible with excellent sensitivity and selectivity while avoiding.60.-k; 78.55.Cr; 78.67.De Keywords: ODNMR; Pulsed excitation; Quantum well; GaAs 1. Introduction Nuclear

Suter, Dieter

70

Spontaneous emission in GaN/InGaN photonic crystal nanopillars  

E-Print Network (OSTI)

. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

Recanati, Catherine

71

Princeton Plasma Physics Lab - General Atomics (GA)  

NLE Websites -- All DOE Office Websites (Extended Search)

general-atomics-ga General general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http://www.pppl.gov/node/1132

American Fusion News Category: 
ga">General Atomics (GA)
72

TMS P&GA Wired to Washington  

Science Conference Proceedings (OSTI)

P & GA COMMITTEE HOME ... the connection between MSE and such key U.S. initiatives as national security, energy independence, and economic growth.

73

Y2, Threading Defect Elimination in GaN Nanostructures  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

74

Preparation and characterization of Ni(OH)2 and NiO mesoporous nanosheets  

Science Conference Proceedings (OSTI)

Mesoporous nanosheets of single-crystalline ?-nickel hydroxide (?-Ni(OH)2) were successfully synthesized via a facile hydrothermal method using Ni(NO3)2 ? 6H2O as precursor in a mixed solution ...

Changyu Li; Shouxin Liu

2012-01-01T23:59:59.000Z

75

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

DOE Green Energy (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

76

Price of Elba Island, GA Liquefied Natural Gas Total Imports...  

Annual Energy Outlook 2012 (EIA)

Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per Thousand Cubic Feet) Price of Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per Thousand Cubic Feet)...

77

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

78

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

79

Nearly itinerant ferromagnetism in CaNi2 and CaNi3  

SciTech Connect

Single crystals of CaNi2 and CaNi3 are successfully grown out of excess Ca. Both compounds manifest a metallic ground state with enhanced, temperature-dependent magnetic susceptibility. The relatively high Stoner factors of Z=0.79 and 0.87 found for CaNi2 and CaNi3, respectively, reveal their close vicinity to ferromagnetic instabilities. The pronounced field dependence of the magnetic susceptibility of CaNi3 at low temperatures (T<25 K) suggests strong ferromagnetic fluctuations. A corresponding contribution to the specific heat with a temperature dependence of T3lnT is also observed.

Jesche, Anton; Dennis, Kevin W.; Kreyssig, Andreas; Canfield, Paul C.

2012-06-26T23:59:59.000Z

80

Development of Ni Base Superalloy for Industrial Gas Turbine  

Science Conference Proceedings (OSTI)

In response to this demand, Ni-base superalloys have been developed by MHI's alloy design system. These Ni-base superalloys have been applied to rotating ...

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Electrodeposited NiCo/Cu Superlattices  

Science Conference Proceedings (OSTI)

NiCo/Cu superlattices were electrodeposited on polycrystalline Cu substrates from a single electrolyte under potentiostatic control. The X-ray diffraction (XRD) patterns showed that NiCo/Cu superlattices have the same crystal structure and texture as in their substrates. The films exhibited giant magnetoresistance (GMR) or anisotropic magnetoresistance (AMR), depending on the Cu layer thicknesses.

Safak, M.; Alper, M. [Department of Physics, Faculty of Science and Literature, University of Uludag, Goeruekle, Bursa (Turkey)

2007-04-23T23:59:59.000Z

82

Pretransition Phenomena and Twin Boundary Motion in NiMnGa ...  

Science Conference Proceedings (OSTI)

Symposium, O. Advanced Neutron and Synchrotron Studies of Materials .... Status of China Spallation Neutron Source and Perspectives of Neutron Research in ...

83

Enhanced Magnetocaloric Effect (MCE) in Polycrystalline Ni2MnGa ...  

Science Conference Proceedings (OSTI)

Symposium, Magnetic Materials for Energy Applications IV ... Fe-rich FeSiBPCu Nano-crystalline Soft Magnetic Alloys Contributable To Energy-saving.

84

Fabricating Tubes of Ni-Mn-Ga Magnetic Shape Memory Alloys by ...  

Science Conference Proceedings (OSTI)

... candidates for magnetocaloric heat-exchangers in magnetic refrigeration. ... and Modeling of Trained Nitinol Torsional Actuators under Reverse Bias Loads.

85

Ferromagnetic Strain Glass in Co Doped Ni-Mn-Ga Alloy  

Science Conference Proceedings (OSTI)

95, 205702(2005) [2] Y. Wang, X. Ren, K. Otsuka, and A. Saxena, Phys. ... Magnetic Refrigeration a 21 Century Highly Efficient and Green Cooling Technology.

86

AlGaAs/GaAs nano-hetero-epitaxy on a patterned GaAs substrate by MBE  

SciTech Connect

An AlGaAs/GaAs resonant tunneling diode (RTD) with submicron size was fabricated on {l_brace}111{r_brace} oblique facets of GaAs with selective MBE. The method is based on the fact that a certain facet structure is formed on a patterned substrate in selective MBE because the growth rate depends strongly on the facet structure. The fabrication of a double-barrier structure was attempted on a {l_brace}111{r_brace}B facet. The current-voltage characteristics of the sample showed negative differential resistance at 77K demonstrating that we have achieved an RTD on a submicron facet.

Nishiwaki, T.; Yamaguchi, M.; Sawaki, N. [Department of Electronics, Nagoya University, Chikusa-ku, Nagoya, 464-8603 (Japan)

2007-04-10T23:59:59.000Z

87

Accelerated aging of GaAs concentrator solar cells  

DOE Green Energy (OSTI)

An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

Gregory, P.E.

1982-04-01T23:59:59.000Z

88

Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence  

E-Print Network (OSTI)

Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence October 1997; accepted for publication 5 January 1998 Recombination in single quantum well and multiquantum well InGaN/GaN structures is studied using time-resolved photoluminescence and pulsed

Bowers, John

89

Optical injection and coherent control of a ballistic charge current in GaAsAlGaAs quantum wells  

E-Print Network (OSTI)

Optical injection and coherent control of a ballistic charge current in GaAs�AlGaAs quantum wells of Hache´ et al.,2,3 but in this article we report injection into the plane of GaAs/AlGaAs quantum wells specific to quantum wells. Although we expect the underlying physics of injection and control of currents

Sipe,J. E.

90

Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting  

E-Print Network (OSTI)

of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

Wetzel, Christian M.

91

Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures  

E-Print Network (OSTI)

Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode and GaInN/GaN heterostructures typically used for high efficiency light emitting diodes is of high materials for green, blue, and UV light emitting diodes (LED) [1-2]. It is known that huge piezoelectric

Wetzel, Christian M.

92

Analysis of Schottky gate electron tunneling in polarization induced AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

( gate=nickel)/(barrier=GaN/Al (y) Ga (1?y) N)/(buffer=GaN)/(substrate=SiC ) polarizationinduced high electron mobility transistors (PI-HEMTs) show promise for ultrahigh power microwave amplification. The polarization fields in these Ga-face

Lester F. Eastman

1999-01-01T23:59:59.000Z

93

Behavior of W and WSi(x) Contact Metallization on n- and p- Type GaN  

SciTech Connect

Sputter-deposited W-based contacts on p-GaN (N{sub A} {approximately} 10{sup 18} cm{sup {minus}3}) display non-ohmic behavior independent of annealing temperature when measured at 25 C. The transition to ohmic behavior occurs above {approximately} 250 C as more of the acceptors become ionized. The optimum annealing temperature is {approximately} 700 C under these conditions. These contacts are much more thermally stable than the conventional Ni/Au metallization, which shows a severely degraded morphology even at 700 C. W-based contacts may be ohmic as-deposited on very heavily doped n-GaN, and the specific contact resistance improves with annealing up to {approximately} 900 C.

Abernathy, C.R.; Cao, X.A.; Cole, M.W.; Eizenberg, M.; Lothian, J.R.; Pearton, S.J.; Ren, F.; Shul, R.J.; Zeitouny, A.; Zolper, J.C.

1999-01-05T23:59:59.000Z

94

GA Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name GA-Solar Place Madrid, Spain Zip 28045 Sector Solar Product Madrid based solar project developer, owned by Spanish industrial group Corporacion Gestamp. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

95

J1, MBE Growth of Metamorphic InGaP on GaAs and GaP for Wide ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

96

AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of SiO2 dielectrics  

Science Conference Proceedings (OSTI)

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) based on InGaN/GaN multi-quantum-well (MQW) structure has been fabricated with SiO"2 dielectric deposited via photo-chemical vapor deposition (PHCVD) using a deuterium lamp ... Keywords: GaN, HEMT, MQW, Photo-chemical vapor deposition, SiO 2

Kai-Hsuan Lee; Ping-Chuan Chang; Shoou-Jinn Chang

2013-04-01T23:59:59.000Z

97

Free carrier accumulation at cubic AlGaN/GaN heterojunctions  

Science Conference Proceedings (OSTI)

Cubic Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructures were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001) substrates. A profile of the electrostatic potential across the cubic-AlGaN/GaN heterojunction was obtained using electron holography in the transmission electron microscope. The experimental potential profile indicates that the unintentionally doped layers show n-type behavior and accumulation of free electrons at the interface with a density of 5.1 x 10{sup 11}/cm{sup 2}, about one order of magnitude less than in wurtzite AlGaN/GaN junctions. A combination of electron holography and cathodoluminescence measurements yields a conduction-to-valence band offset ratio of 5:1 for the cubic AlGaN/GaN interface, which also promotes the electron accumulation. Band diagram simulations show that the donor states in the AlGaN layer provide the positive charges that to a great extent balance the two-dimensional electron gas.

Wei, Q. Y.; Li, T.; Huang, J. Y.; Ponce, F. A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Tschumak, E.; Zado, A.; As, D. J. [Department of Physics, Universitaet Paderborn, D-33098 Paderborn (Germany)

2012-04-02T23:59:59.000Z

98

L1, Formation of Structural Defects in AlGaN/GaN High Electron ...  

Science Conference Proceedings (OSTI)

Transmission electron microscope (TEM) cross sectional image has shown that electrical degradation is closely related to structural damage in the GaN cap and  ...

99

Srednje Gameljne SV_Andrej.qxd 19/07/2002 08:58 Page 1  

E-Print Network (OSTI)

kri`em v ozadju. Slike za zapiranje trona ni. Desno ob tronu je sv. Jakob starejsi in levo apostol sv

Silc, Jurij

100

Plasma Damage in p-GaN  

SciTech Connect

The effect of Inductively Coupled Plasma H{sub 2} or Ar discharges on the breakdown voltage of p-GaN diodes was measured over a range of ion energies and fluxes. The main effect of plasma exposure is a decrease in net acceptor concentration to depths of 400-550{angstrom}. At high ion fluxes or energies there can be type conversion of the initially p-GaN surface. Post etch annealing at 900 C restores the initial conductivity.

Cao, X.A.; Dang, G.T.; Hickman, R.A.; Pearton, S.J.; Ren, F.; Shul, R.J.; Van Hove, J.M.; Zhang, A.P.; Zhang, L.

1999-06-30T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

GaTe semiconductor for radiation detection  

SciTech Connect

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

102

Phase Field Simulation of Ni4Ti3 Precipitation in Porous NiTi Shape ...  

Science Conference Proceedings (OSTI)

Generally, porous NiTi alloys may undergo thermomechnical treatment which .... of First Derivative of Dilatation in Low Carbon Steels Multi-Phase Presenting.

103

Layering and temperature-dependent magnetization and anisotropy of naturally produced Ni/NiO multilayers  

Science Conference Proceedings (OSTI)

Ni/NiO multilayers were grown by magnetron sputtering at room temperature, with the aid of the natural oxidation procedure. That is, at the end of the deposition of each single Ni layer, air is let to flow into the vacuum chamber through a leak valve. Then, a very thin NiO layer ({approx}1.2 nm) is formed. Simulated x-ray reflectivity patterns reveal that layering is excellent for individual Ni-layer thickness larger than 2.5 nm, which is attributed to the intercalation of amorphous NiO between the polycrystalline Ni layers. The magnetization of the films, measured at temperatures 5-300 K, has almost bulk-like value, whereas the films exhibit a trend to perpendicular magnetic anisotropy (PMA) with an unusual significant positive interface anisotropy contribution, which presents a weak temperature dependence. The power-law behavior of the multilayers indicates a non-negligible contribution of higher order anisotropies in the uniaxial anisotropy. Bloch-law fittings for the temperature dependence of the magnetization in the spin-wave regime show that the magnetization in the multilayers decreases faster as a function of temperature than the one of bulk Ni. Finally, when the individual Ni-layer thickness decreases below 2 nm, the multilayer stacking vanishes, resulting in a dramatic decrease of the interface magnetic anisotropy and consequently in a decrease of the perpendicular magnetic anisotropy.

Pappas, S. D.; Trachylis, D.; Velgakis, M. J. [Laboratory of High-Tech Materials, School of Engineering, University of Patras, 26504 Patras (Greece); Kapaklis, V.; Joensson, P. E.; Papaioannou, E. Th. [Department of Physics and Astronomy, Uppsala University, Box 516, SE-751 20 Uppsala (Sweden); Delimitis, A. [Chemical Process Engineering Research Institute (CPERI), Centre for Research and Technology Hellas (CERTH), 57001 Thermi, Thessaloniki (Greece); Poulopoulos, P. [Laboratory of High-Tech Materials, School of Engineering, University of Patras, 26504 Patras (Greece); Institut fuer Experimentalphysik, Freie Universitaet Berlin, Arnimallee 14, D-14195 Berlin-Dahlem (Germany); Materials Science Department, University of Patras, 26504 Patras (Greece); Fumagalli, P. [Institut fuer Experimentalphysik, Freie Universitaet Berlin, Arnimallee 14, D-14195 Berlin-Dahlem (Germany); Politis, C. [Laboratory of High-Tech Materials, School of Engineering, University of Patras, 26504 Patras (Greece); Department of Materials Science and Engineering, University of Texas at Arlington, Arlington, Texas 76019 (United States)

2012-09-01T23:59:59.000Z

104

Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors  

E-Print Network (OSTI)

In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain ...

Lu, Bin

105

Simulation and Design Analysis of (A1Ga)As/GaAs MODFET Integrated Circuits  

Science Conference Proceedings (OSTI)

A new (AlGa)As/GaAs MODFET integrated circuit simulator is described. Our simulator is a customized version of SPICE incorporating the extended charge control model for MODFET's and the velocity saturation model for ungated FET's used as the load devices. ...

Choong H. Hyun; M. S. Shur; N. C. Cirillo

2006-11-01T23:59:59.000Z

106

Nanocrystals cylindrical microcavities exploiting thin-walled InGaAs/GaAs microtubes  

Science Conference Proceedings (OSTI)

This paper relies on the design and fabrication of CdSe/ZnS core/shell colloidal nanocrystals (NCs) cylindrical microcavities for microphotonics applications. The fabrication technology relies on the release of the strain in strained heterostructures, ... Keywords: Colloidal nanocrystals, InGaAs/GaAs microtubes, Strained multilayer

C. Giordano; M. T. Todaro; A. Salhi; L. Martiradonna; I. Viola; A. Passabí; L. Carbone; G. Gigli; A. Passaseo; M. De Vittorio

2007-05-01T23:59:59.000Z

107

Two-dimensional electron gas in AlGaN/GaN heterostructures  

Science Conference Proceedings (OSTI)

The formation of a two-dimensional electron gas (2DEG) system by an AlGaN/GaN heterostructure has been further confirmed by measuring its electrical properties. The effect of persistent photoconductivity (PPC) has been observed and its unique features have been utilized to study the properties of 2DEG formed by the AlGaN/GaN heterointerface. Sharp electronic transitions from the first to the second subbands in the 2DEG channel have been observed by monitoring the 2DEG carrier mobility as a function of carrier concentration through the use of PPC. These results are expected to have significant implications on field-effect transistor and high electron mobility transistor applications based on the GaN system. {copyright} {ital 1997 American Vacuum Society.}

Li, J.Z.; Lin, J.Y.; Jiang, H.X. [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)] [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States); Khan, M.A.; Chen, Q. [APA Optics, Inc., Blaine, Minnesota 55449 (United States)] [APA Optics, Inc., Blaine, Minnesota 55449 (United States)

1997-07-01T23:59:59.000Z

108

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

DOE Green Energy (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

109

MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED  

Science Conference Proceedings (OSTI)

We have grown 2DEG AlGaN/GaN heterostructures by molecular beam epitaxy (MBE) with electron mobilities up to 21500 cm{sup 2}V{sup -1}s{sup -1} at 2 K. In-situ RHEED was applied to optimize different aspects of Ga-rich growth. This paper gives a compact overview of the experimental key aspects that significantly affect the low temperature electron mobility in AlGaN/GaN heterostructures. Growth at the transition towards Ga droplet formation produced the best results. A quantitative analysis of the magnetoresistance confirmes scattering at dislocations as the dominant scattering process at low temperature.

Broxtermann, D.; Sivis, M.; Malindretos, J.; Rizzi, A. [IV. physikalisches Institut, Georg-August-Universitaet Goettingen (Germany)

2012-03-15T23:59:59.000Z

110

Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures  

Science Conference Proceedings (OSTI)

Double pulse doped ({delta}-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm{sup 2}/(V s) at sheet electron densities of 3.00 x 10{sup 12} and 3.36 x 10{sup 12} cm{sup -2}, respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A. [Russian Academy of Sciences, St. Petersburg Physics and Technology Center for Research and Education (Russian Federation)

2010-07-15T23:59:59.000Z

111

Improvement of thermoelectric properties for half-Heusler TiNiSn by interstitial Ni defects  

SciTech Connect

We have synthesized off-stoichiometric Ti-Ni-Sn half-Heusler thermoelectrics in order to investigate the relation between randomly distributed defects and thermoelectric properties. A small change in the composition of Ti-Ni-Sn causes a remarkable change in the thermal conductivity. An excess content of Ni realizes a low thermal conductivity of 2.93 W/mK at room temperature while keeping a high power factor. The low thermal conductivity originates in the defects generated by an excess content of Ni. To investigate the detailed defect structure, we have performed first-principles calculations and compared with x ray photoemission spectroscopy measurement. Based on these analyses, we conclude that the excess Ni atoms randomly occupy the vacant sites in the half-Heusler structure, which play as phonon scattering centers, resulting in significant improvement of the figure of merit without any substitutions of expensive heavy elements, such as Zr and Hf.

Hazama, Hirofumi; Matsubara, Masato; Asahi, Ryoji [Toyota Central R and D Labs., Inc., Nagakute, Aichi 480-1192 (Japan); Takeuchi, Tsunehiro [Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2011-09-15T23:59:59.000Z

112

GaN Nanopore Arrays: Fabrication and Characterization  

E-Print Network (OSTI)

GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...

Wang, Yadong

113

GA-AL-SC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

114

Preparation of PtNi Nanoparticles for the Electrocatalytic Oxidation of Methanol  

E-Print Network (OSTI)

Carbon supported PtNi nanoparticles were prepared by hydrazine reduction of Pt and Ni precursor salts under different conditions, namely by conventional heating (PtNi-1), by prolonged reaction at room temperature (PtNi-2) ...

Deivaraj, T.C.

115

Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

Chung, Jinwook W. (Jinwook Will)

2008-01-01T23:59:59.000Z

116

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

We have investigated the surface morphology of electrically stressed AlGaN/GaN high electron mobility transistors using atomic force microscopy and scanning electron microscopy after removing the gate metallization by ...

Makaram, Prashanth

117

Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment  

E-Print Network (OSTI)

Enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are highly desirable for power and digital electronic circuits. Several technologies have been demonstrated in the last few years to fabricate ...

Palacios, Tomas

118

GaN: Defect and Device Issues  

SciTech Connect

The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

1998-11-09T23:59:59.000Z

119

GaAs photoconductive semiconductor switch  

DOE Patents (OSTI)

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

1998-01-01T23:59:59.000Z

120

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+  

E-Print Network (OSTI)

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

McKittrick, Joanna

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Airtricity Developments NI Ltd | Open Energy Information  

Open Energy Info (EERE)

NI Ltd NI Ltd Jump to: navigation, search Name Airtricity Developments NI Ltd Place Belfast, Northern Ireland, United Kingdom Zip BT2 7AF Sector Wind energy Product Focused on construction of wind farms in Northern Ireland. Coordinates 54.595295°, -5.934524° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":54.595295,"lon":-5.934524,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

122

Carbon Nanotube Growth Using Ni Catalyst in Different Layouts  

E-Print Network (OSTI)

Vertically aligned carbon nanotubes have been grown using Ni as catalyst by plasma enhanced chemical vapor deposition system (PECVD) in various pre-patterned substrates. Ni was thermally evaporated on silicon substrates ...

Nguyen, H. Q.

123

Ni spin switching induced by magnetic frustration in FeMn/Ni/Cu(001)  

SciTech Connect

Epitaxially grown FeMn/Ni/Cu(001) films are investigated by Photoemission Electron Microscopy and Magneto-Optic Kerr Effect. We find that as the FeMn overlayer changes from paramagnetic to antiferromagnetic state, it could switch the ferromagnetic Ni spin direction from out-of-plane to in-plane direction of the film. This phenomenon reveals a new mechanism of creating magnetic anisotropy and is attributed to the out-of-plane spin frustration at the FeMn-Ni interface.

Wu, J.; Choi, J.; Scholl, A.; Doran, A.; Arenholz, E.; Hwang, Chanyong; Qiu, Z. Q.

2009-03-08T23:59:59.000Z

124

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network (OSTI)

Fainman, "Influence of chlorine on etched sidewalls inFainman, “Influence of chlorine on etched sidewalls inthe RIBE of GaAs with chlorine (Cl 2 ), ion beam sputtering

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

125

JJ2, Optical Polarization of Non-Polar GaInN/GaN LEDs  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

126

K1, Molecular Beam Epitaxy of Catalyst-Free InGaN/GaN Nanowires ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

127

Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes  

E-Print Network (OSTI)

We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

Cornelius S. Bausch; Aune Koitmäe; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

2013-05-06T23:59:59.000Z

128

Recent progress in InGaAsSb/GaSb TPV devices  

DOE Green Energy (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

129

High Temperature coatings based on {beta}-NiAI  

Science Conference Proceedings (OSTI)

High temperature alloys are reviewed, focusing on current superalloys and their coatings. The synthesis, characerization, and oxidation performance of a NiAl–TiB{sub 2} composite are explained. A novel coating process for Mo–Ni–Al alloys for improved oxidation performance is examined. The cyclic oxidation performance of coated and uncoated Mo–Ni–Al alloys is discussed.

Severs, Kevin

2012-07-10T23:59:59.000Z

130

GaNPAs Solar Cells Lattice-Matched To GaP: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

Geisz, J. F.; Friedman, D. J.; Kurtz, S.

2002-05-01T23:59:59.000Z

131

GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP  

Science Conference Proceedings (OSTI)

We report on the epitaxial growth of an AlSb/InAs heterostructure on a (001) GaP substrate. We investigate the conditions for the most efficient relaxation of GaSb islands on GaP. In particular, we show that the GaP surface treatment and the growth temperature are crucial for the formation of a two-dimensional periodic array of 90 deg. misfit dislocations at the episubstrate interface. With this relaxation process, an AlSb/InAs heterostructure exhibiting a room temperature mobility of 25 500 cm{sup 2} V{sup -1} s{sup -1} on GaP is demonstrated. This result paves the way to the integration of Sb-based devices on Si substrates through the use of GaP/Si templates.

El Kazzi, S.; Desplanque, L.; Coinon, C.; Wallart, X. [Institut d'Electronique, de Microelectronique, et de Nanotechnologie, UMR-CNRS 8520, BP 60069, 59652 Villeneuve d'Ascq Cedex (France); Wang, Y.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 6, Boulevard du Marechal Juin, 14050 Caen Cedex (France)

2010-11-08T23:59:59.000Z

132

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents (OSTI)

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

133

Measurement of {sup 63}Ni and {sup 59}Ni by accelerator mass spectrometry using characteristic projectile x-rays  

Science Conference Proceedings (OSTI)

The long-lived isotopes of nickel ({sup 59}Ni, {sup 63}Ni) have current and potential use in a number of applications including cosmic radiation studies, biomedical tracing, characterization of low-level radioactive wastes, and neutron dosimetry. Methods are being developed at LLNL for the routine detection of these isotopes by AMS. One intended application is in Hiroshima dosimetry. The reaction {sup 63}Cu(n,p){sup 63}Ni has been identified as one of a small number of reactions which might be used for the direct determination of the fast neutron fluence emitted by the Hiroshima bomb. AMS measurement of {sup 63}Ni(t{sub 1/2} = 100 y) requires the chemical removal of {sup 63}Cu, which is a stable isobar of {sup 63}Ni. Following the electrochemical separation of Ni from gram-sized copper samples, the Cu concentration is further lowered to Hiroshima hypocenter. For the demonstration samples, the Cu content was chemically reduced by a factor of 10{sup 12} with quantitative retention of {sup 63}Ni. Detection sensitivity (3{sigma}) was {approximately}20 fg {sup 63}Ni in 1 mg Ni carrier ({sup 63}Ni/Ni {approx} 2 x 10{sup -11}). Significant improvements in sensitivity are expected with planned incremental changes in the methods. Preliminary results indicate that a similar sensitivity is achievable for {sup 59}Ni (t{sub 1/2} = 10{sup 5} y).

McAninch, J.E.; Hainsworth, L.J.; Marchetti, A.A. [and others

1996-05-01T23:59:59.000Z

134

Comparison of Three Ni-Hard I Alloys  

Office of Scientific and Technical Information (OSTI)

Comparison of Three Ni-Hard I Alloys Comparison of Three Ni-Hard I Alloys Ă–. N. Do-an 1 , J.A. Hawk 1 , and J.Rice 2 1 U.S. Department of Energy, Albany Research Center, Albany, Oregon 2 Texaloy Foundry Co., Inc., Floresville, Texas Keywords: Ni-Hard white irons, Bainite, Martensite, Austenite, Abrasion resistant iron Abstract This report documents the results of an investigation which was undertaken to reveal the similarities and differences in the mechanical properties and microstructural characteristics of three Ni-Hard I alloys. One alloy (B1) is ASTM A532 class IA Ni-Hard containing 4.2 wt. pct. Ni. The second alloy (B2) is similar to B1 but higher in Cr, Si, and Mo. The third alloy (T1) also falls in the same ASTM specification, but it contains 3.3 wt. pct. Ni. The alloys were evaluated in both as-cast and

135

Synthesis and characterization of T[Ni(CN){sub 4}].2pyz with T=Fe, Ni; pyz=pyrazine: Formation of T-pyz-Ni bridges  

Science Conference Proceedings (OSTI)

The formation of T-pyz-Ni bridges (pyz=pyrazine) in the T[Ni(CN){sub 4}].2pyz series is known for T=Mn, Zn, Cd and Co but not with T=Fe, Ni. In this contribution the existence of such bridges also for T=Fe, Ni is discussed. The obtained pillared solids, T[Ni(CN){sub 4}].2pyz, were characterized from XRD, TG, UV-Vis, IR, Raman, Moessbauer and magnetic data. Their crystal structures were refined in the orthorhombic Pmna space group from XRD powder patterns. The structural behavior of these solids on cooling down to 77 K was also studied. In the 180-200 K temperature range the occurrence of a structural transition to a monoclinic structure (P2{sub 1}/c space group) was observed. No temperature induced spin transition was observed for Fe[Ni(CN){sub 4}].2pyz. The iron (II) was found to be in high spin electronic state and this configuration is preserved on cooling down to 2 K. The magnetic data indicate the occurrence of a low temperature weak anti-ferromagnetic interaction between T metal centers within the T[Ni(CN){sub 4}] layer. In the paramagnetic region for Ni[Ni(CN){sub 4}].2pyz, a reversible temperature induced spin transition for the inner Ni atom was detected. - Graphical abstract: Rippled sheets structure for the pillared solids T[Ni(CN){sub 4}].2pyz. The pyrazine molecule is found forming T-pyz-Ni bridges between neighboring layers. Highlights: > Pillared 2D solids. > Inorganic-organic solids. > Assembling of molecular blocks. > From 1D and 2D building blocks to 3D solids.

Lemus-Santana, A.A. [Center for Applied Science and Advanced Technology, Legaria Unit, National Polytechnic Institute of Mexico, Mexico D.F. (Mexico); Rodriguez-Hernandez, J. [Center for Applied Science and Advanced Technology, Legaria Unit, National Polytechnic Institute of Mexico, Mexico D.F. (Mexico); Institute of Materials Science and Technology, University of Havana (Cuba); Gonzalez, M. [Center for Applied Science and Advanced Technology, Legaria Unit, National Polytechnic Institute of Mexico, Mexico D.F. (Mexico); Demeshko, S. [Institut fuer Anorganische Chemie, Georg-August-Universitaet Goettingen, Tammannstrasse 4, 37077 Goettingen (Germany); Avila, M. [Center for Applied Science and Advanced Technology, Legaria Unit, National Polytechnic Institute of Mexico, Mexico D.F. (Mexico); Knobel, M. [Institute of Physics 'Gleb Wataghin', UNICAMP, 13083-970 Campinas, SP (Brazil); Reguera, E., E-mail: ereguera@yahoo.com [Center for Applied Science and Advanced Technology, Legaria Unit, National Polytechnic Institute of Mexico, Mexico D.F. (Mexico)

2011-08-15T23:59:59.000Z

136

Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy  

Science Conference Proceedings (OSTI)

We report a study on self-catalyzed GaP/GaNP core/shell nanowires (NWs) grown on Si(111) by gas-source molecular beam epitaxy. Scanning electron microscopy images show that vertical and uniform GaP NWs and GaP/GaNP core/shell NWs are grown on Si(111). The density ranges from {approx}1 x 10{sup 7} to {approx}5 x 10{sup 8} cm{sup -2} across the substrate. Typical diameters are {approx}110 nm for GaP NWs and {approx}220 nm for GaP/GaNP NWs. Room temperature photoluminescence (PL) signal from the GaP/GaNP core/shell NWs confirms that N is incorporated in the shell and the average N content is {approx}0.9%. The PL low-energy tail is significantly reduced, compared to bulk GaNP.

Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Sukrittanon, S. [Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Li, H. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Tu, C. W. [Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2012-01-30T23:59:59.000Z

137

Stripe-to-bubble transition of magnetic domains at the spin reorientation of (Fe/Ni)/Cu/Ni/Cu(001)  

Science Conference Proceedings (OSTI)

Magnetic domain evolution at the spin reorientation transition (SRT) of (Fe/Ni)/Cu/Ni/Cu(001) is investigated using photoemission electron microscopy. While the (Fe/Ni) layer exhibits the SRT, the interlayer coupling of the perpendicularly magnetized Ni layer to the (Fe/Ni) layer serves as a virtual perpendicular magnetic field exerted on the (Fe/Ni) layer. We find that the perpendicular virtual magnetic field breaks the up-down symmetry of the (Fe/Ni) stripe domains to induce a net magnetization in the normal direction of the film. Moreover, as the virtual magnetic field increases to exceed a critical field, the stripe domain phase evolves into a bubble domain phase. Although the critical field depends on the Fe film thickness, we show that the area fraction of the minority domain exhibits a universal value that determines the stripe-to-bubble phase transition.

Wu, J.; Choi, J.; Won, C.; Wu, Y. Z.; Scholl, A.; Doran, A.; Hwang, Chanyong; Qiu, Z.

2010-06-09T23:59:59.000Z

138

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations  

E-Print Network (OSTI)

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, GaP, or (Al,Ga)As, which opens a wide area of possibilities for optimizing the host composition towards higher ferromagnetic Curie temperatures. Here we explore theoretically hole-mediated ferromagnetism and Mn incorporation in Ga(As,P) and (Al,Ga)As ternary hosts. While alloying (Ga,Mn)As with Al has only a small effect on the Curie temperature we predict a sizable enhancement of Curie temperatures in the smaller lattice constant Ga(As,P) hosts. Mn-doped Ga(As,P) is also favorable, as compared to (Al,Ga)As, with respect to the formation of carrier and moment compensating interstitial Mn impurities. In (Ga,Mn) (As,P) we find a marked decrease of the partial concentration of these detrimental impurities with increasing P content.

Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

139

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates  

E-Print Network (OSTI)

5221, 34095 Montpellier, France E-mail: pmc53@cam.ac.uk Received October 12, 2012; accepted November 22, 2012; published online May 20, 2013 This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various...

Corfdir, Pierre; Dussaigne, Amélie; Teisseyre, Henryk; Suski, Tadeusz; Grzegory, Izabella; Lefebvre, Pierre; Giraud, Etienne; Shahmohammadi, Mehran; Phillips, Richard; Ganičre, Jean-Daniel; Grandjean, Nicolas; Deveaud, Benoît

140

Growth orientation dependent photoluminescence of GaAsN alloys  

SciTech Connect

We report photoluminescence (PL) studies of both as-grown and electron-irradiated GaAsN epilayers on (311)A/B and (100) GaAs substrates. A long room-temperature (RT) PL lifetime, as well as an enhanced N incorporation, is observed in (311)B GaAsN epilayers as compared with (311)A and (100) samples. There is no direct correlation between the RT PL lifetime and the emission intensity from Ga vacancy complex detected at low temperature. The lifetime damage coefficient is relatively low for (311)B GaAsN. The irradiation-induced nonradiative recombination defects are suggested to be N- and/or As-related according to a geometrical analysis based on the tetrahedral coordination of GaAsN crystal.

Han, Xiuxun; Tanaka, Tomohiro; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan); Sato, Shinichiro [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)

2012-01-16T23:59:59.000Z

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141

SF 6432-NI (04-95)  

NLE Websites -- All DOE Office Websites (Extended Search)

6/14/11 6/14/11 Page 1 of 14 Printed copies of this document are uncontrolled. Retrieve latest version electronically. SF 6432-NI (06/14/11) SECTION II STANDARD TERMS AND CONDITIONS FOR FIXED PRICE CONTRACTS WITH THE NEWLY INDEPENDENT STATES OF THE FORMER SOVIET UNION INDEX OF CLAUSES. THE FOLLOWING CLAUSES APPLY TO REQUESTS FOR QUOTATION AND CONTRACTS AS INDICATED UNLESS SPECIFICALLY DELETED, OR EXCEPT TO THE EXTENT THEY ARE SPECIFICALLY SUPPLEMENTED OR AMENDED IN WRITING IN THE SIGNATURE PAGE OR SECTION I. NI01 - ACCEPTANCE OF TERMS AND CONDITIONS Contractor, by signing this Agreement, beginning performance, and/or delivering Items or services ordered under this Agreement, agrees to comply with all the terms and conditions and all specifications and other documents that this Contract incorporated by

142

Microsoft Word - NiR.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

Side-on Cu-Nitrosyl Coordination by Nitrite Reductase Side-on Cu-Nitrosyl Coordination by Nitrite Reductase Elitza I. Tocheva and Michael E. P. Murphy Department of Microbiology & Immunology, The University of British Columbia, Vancouver, BC, Canada V6T 1Z3. Nitric oxide (NO) is one of the smallest and simplest biologically active molecules. In mammals, NO is produced from arginine by isoforms of nitric oxide synthase, and it func- tions in signal transduction and as a cytoprotective or cytotoxic agent. In bacteria, NO is produced by nitrite reductase (NiR), a copper-containing enzyme, which is responsible for the reduction of nitrite to nitric oxide (NO) in the process of dissimilatory denitrification. Cu- containing NiRs are homotrimers with two distinct Cu sites per monomeric unit (1). The type

143

Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

1998-10-14T23:59:59.000Z

144

Growth and Fabrication of GaN/AlGaN Heterojunction Bipolar Transistor  

SciTech Connect

A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si Doping in the emitter and collector regions was grown by Metal Organic Chemical Vapor Deposition in c-axis Al(2)O(3). Secondary Ion Mass Spectrometry measurements showed no increase in the O concentration (2-3x10(18) cm(-3)) in the AlGaN emitter and fairly low levels of C (~4-5x10(17) cm (-3)) throughout the structure. Due to the non-ohmic behavior of the base contact at room temperature, the current gain of large area (~90 um diameter) devices was <3. Increasing the device operating temperature led to higher ionization fractions of the mg acceptors in the base, and current gains of ~10 were obtained at 300 degree C.

Abernathy, C.R.; Baca, A.G.; Cao, X.A.; Cho, H.; Dang, G.T.; Donovan, S.M.; Han, J.; Jung, K.B.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Wilson, R.G.; Zhang, A.P.; Zhang, L

1999-03-16T23:59:59.000Z

145

A InGaN/GaN quantum dot green ({lambda}=524 nm) laser  

SciTech Connect

The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab [Department of Electrical Engineering and Computer Science, Center for Nanoscale Photonics and Spintronics, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2011-05-30T23:59:59.000Z

146

Evaluation of defects and degradation in GaAs-GaAlAs wafers using transmission cathodoluminescence  

Science Conference Proceedings (OSTI)

A large number of GaAs substrates GaAlAs double-heterostructure (DH) wafers, and high-radiance GaAlAs DH light-emitting diodes (LEDS) were evaluated using transmission cathodoluminescence (TCL). We show that only epitaxial wafers with a high defect density as revealed by TCL readily develop dark line defects (DLDs) with current injection, optical excitation, or electron beam excitation. Furthermore, in agreement with the previous work, the electron-beam-induced DLDs originate at dislocations and their growth requires minority-carrier injection. Based on these results, it is inferred that TCL can serve as a nondestructive screening technique for the selection of materials that produces a high yield of reliable LEDs.

Chin, A.K.; Keramidas, V.G.; Johnston, W.D. Jr.; Mahajan, S.; Roccasecca, D.D.

1980-02-01T23:59:59.000Z

147

GaInSb and GaInAsSb thermophotovoltaic device fabrication and characterization  

DOE Green Energy (OSTI)

Thermophotovoltaic (TPV) devices have been fabricated using epitaxial ternary and quaternary layers grown on GaSb substrates. The GaInSb layers were grown by organometallic vapor phase epitaxy (OMVPE) and the InGaAsSb lattice-matched layers were grown by liquid phase epitaxy (LPE). Device fabrication steps include unannealed p-type ohmic contacts, annealed Sn/Au n-type ohmic contacts, and a thick Ag top-surface contact using a lift-off process. Devices are characterized primarily by dark I-V, photo I-V, and quantum efficiency measurements, which are correlated to microscopic and macroscopic material properties. Particular emphasis has been on material enhancements to increase quantum efficiency and decrease dark saturation current density. TPV device performance is presently limited by the base diffusion length, typically 1 to 2 microns.

Hitchcock, C.; Gutmann, R.; Borrego, J.; Ehsani, H.; Bhat, I. [Rensselaer Polytechnic Inst., Troy, NY (United States); Freeman, M.; Charache, G. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

148

Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells  

Science Conference Proceedings (OSTI)

The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

Baidus, N. V. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation); Vainberg, V. V. [National Academy of Sciences of Ukraine, Institute of Physics (Ukraine); Zvonkov, B. N. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation); Pylypchuk, A. S., E-mail: pylypchuk@iop.kiev.ua; Poroshin, V. N.; Sarbey, O. G. [National Academy of Sciences of Ukraine, Institute of Physics (Ukraine)

2012-05-15T23:59:59.000Z

149

Radiation Hard AlGaN Detectors and Imager  

Science Conference Proceedings (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

150

InGaAs and Ge MOSFETs with high ? dielectrics  

Science Conference Proceedings (OSTI)

InGaAs and Ge MOSFETs with high @k's are now the leading candidates for technology beyond the 15nm node CMOS. The UHV-Al"2O"3/Ga"2O"3(Gd"2O"3) [GGO]/InGaAs has low electrical leakage current densities, C-V characteristics with low interfacial densities ... Keywords: Atomic layer deposition, Germanium, High ? dielectrics, III-V Compound semiconductor, MOSFETs, Molecular beam epitaxy

W. C. Lee; P. Chang; T. D. Lin; L. K. Chu; H. C. Chiu; J. Kwo; M. Hong

2011-04-01T23:59:59.000Z

151

Measurement of {sup 63}Ni and {sup 59}Ni by accelerator mass spectrometry using characteristic projectile x-rays  

SciTech Connect

The long-lived isotopes of nickel ({sup 59}Ni, {sup 63}Ni) have current and potential use in a number of applications including cosmic radiation studies, biomedical tracing, characterization of low-level radioactive wastes, and neutron dosimetry. Methods are being developed at LLNL for the routine detection of these isotopes by AMS. One intended application is in Hiroshima dosimetry. The reaction {sup 63}Cu(n,p){sup 63}Ni has been identified as one of a small number of reactions which might be used for the direct determination of the fast neutron fluence emitted by the Hiroshima bomb. AMS measurement of {sup 63}Ni(t{sub 1/2} = 100 y) requires the chemical removal of {sup 63}Cu, which is a stable isobar of {sup 63}Ni. Following the electrochemical separation of Ni from gram-sized copper samples, the Cu concentration is further lowered to < 2 x 10{sup -8} (Cu/Ni) using the reaction of Ni with carbon monoxide to form the gas Ni(CO){sub 4}. The Ni(CO){sub 4} is thermally decomposed directly in sample holders for measurement by AMS. After analysis in the AMS spectrometer, the ions are identified using characteristic projectile x-rays, allowing further rejection of remaining {sup 63}Cu. In a demonstration experiment, {sup 63}Ni was measured in Cu wires (2-20 g) which had been exposed to neutrons from a {sup 252}Cf source. We successfully measured {sup 63}Ni at levels necessary for the measurement of Cu samples exposed near the Hiroshima hypocenter. For the demonstration samples, the Cu content was chemically reduced by a factor of 10{sup 12} with quantitative retention of {sup 63}Ni. Detection sensitivity (3{sigma}) was {approximately}20 fg {sup 63}Ni in 1 mg Ni carrier ({sup 63}Ni/Ni {approx} 2 x 10{sup -11}). Significant improvements in sensitivity are expected with planned incremental changes in the methods. Preliminary results indicate that a similar sensitivity is achievable for {sup 59}Ni (t{sub 1/2} = 10{sup 5} y).

McAninch, J.E.; Hainsworth, L.J.; Marchetti, A.A. [and others

1996-05-01T23:59:59.000Z

152

Atomistic Modeling of Thermodynamic Properties of Pu-Ga Alloys ...  

Science Conference Proceedings (OSTI)

Atomistic Modeling of Thermodynamic Properties of Pu-Ga Alloys Based on the ... Resources for the Selection and Use of Interatomic Potentials in Atomistic ...

153

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

contractors supported the dismantlement including asbestos removal and concrete cutting, electrical, and HVAC. Project support functions were provided by GA organizations...

154

Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 {mu}m  

Science Conference Proceedings (OSTI)

Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecular beam epitaxy (MBE). Photoluminescence (PL) reveals strong improvements in the optical properties evidenced by 10 times enhancement in PL intensity and extended emission wavelength up to 1.29 {mu}m when Bi is introduced to InGaAs/GaAs QWs. The improved optical quality results from the Bi surfactant effect as well as the Bi incorporation. Post growth thermal annealing shows that Bi atoms in InGaAs/GaAs QWs do not show good thermal stability at 650 Degree-Sign C and tend to diffuse out of the QWs resulting in large wavelength blue-shifts.

Ye Hong; Song Yuxin; Wang Shumin [Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg SE-41296 (Sweden); Gu Yi [Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2012-12-15T23:59:59.000Z

155

Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots  

Science Conference Proceedings (OSTI)

In this work, we demonstrate the dependence of the nitrogen incorporation on the Ga/In content into (In,Ga)(As,N) quantum dots (QDs) grown on GaAs (100) by radio-frequency plasma assisted molecular beam epitaxy (MBE). Morphological analysis by atomic force microscopy and cross-sectional transmission electron microscopy, together with an estimation of the transition thickness, monitored in situ during the growth, predict a maximum in the N incorporation for 30% Ga content. This result is confirmed by photoluminescence measurements of the as-grown and post-growth annealed samples. We attribute this behavior to a trade off between two mechanisms depending on the Ga/In content: one related to the stability of the Ga-N bond, and the other related to the surface strain and/or In segregation.

Gargallo-Caballero, R.; Guzman, A.; Ulloa, J. M.; Hierro, A. [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM)-Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Hopkinson, M. [Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom); Luna, E.; Trampert, A. [Paul Drude Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2012-04-15T23:59:59.000Z

156

Bulk growth of GaSb and Ga{sub 1{minus}x}In{sub x}Sb  

DOE Green Energy (OSTI)

GaSb and InGaSb have been demonstrated to be suitable choices for high efficiency thermophotovoltaic (TPV) cells. Synthesis and growth of bulk GaSb single crystals and GaInSb polycrystals have been carried out by the vertical Bridgman technique, with a baffle immersed in the melt and by complete encapsulation of the melt by low melting temperature alkali halides or oxides. The critical roles of the baffle and the encapsulation are discussed. Efforts in obtaining device grade GaSb with superior structural and electrical properties and compositionally homogeneous GaInSb are described, emphasizing the key steps in the growth cycle developed to obtain good crystalline quality.

Dutta, P.S.; Ostrogorsky, A.G.; Gutmann, R.J.

1997-05-01T23:59:59.000Z

157

P8, Fabrication of Subwavelength Pillar Arrays on GaAs by Confined ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

158

II4, Compositionally-Graded Layers Composed of Tandem InGaAs ...  

Science Conference Proceedings (OSTI)

The specification of the 6° miscut is important because it provides step ..... of Metamorphic InGaP on GaAs and GaP for Wide-Bandgap Photovoltaic Junctions.

159

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN Shi You, Theeradetch Detchprohm, Mingwei Zhu  

E-Print Network (OSTI)

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN Shi You, Theeradetch Detchprohm in nonpolar light-emitting diodes (LEDs) covering the blue to green spectral range. In photo- luminescence, m's overall power efficiency. Linearly polarized light can be efficiently generated in GaInN/GaN-based light-emitting

Wetzel, Christian M.

160

NiW and NiRu Bimetallic Catalysts for Ethylene Steam Reforming: Alternative Mechanisms for Sulfur Resistance  

SciTech Connect

Previous investigations of Ni-based catalysts for the steam reforming of hydrocarbons have indicated that the addition of a second metal can reduce the effects of sulfur poisoning. Two systems that have previously shown promise for such applications, NiW and NiRu, are considered here for the steam reforming of ethylene, a key component of biomass derived tars. Monometallic and bimetallic Al{sub 2}O{sub 3}-supported Ni and W catalysts were employed for ethylene steam reforming in the presence and absence of sulfur. The NiW catalysts were less active than Ni in the absence of sulfur, but were more active in the presence of 50 ppm H{sub 2}S. The mechanism for the W-induced improvements in sulfur resistance appears to be different from that for Ru in NiRu. To probe reasons for the sulfur resistance of NiRu, the adsorption of S and C{sub 2}H{sub 4} on several bimetallic NiRu alloy surfaces ranging from 11 to 33 % Ru was studied using density functional theory (DFT). The DFT studies reveal that sulfur adsorption is generally favored on hollow sites containing Ru. Ethylene preferentially adsorbs atop the Ru atom in all the NiRu (111) alloys investigated. By comparing trends across the various bimetallic models considered, sulfur adsorption was observed to be correlated with the density of occupied states near the Fermi level while C{sub 2}H{sub 4} adsorption was correlated with the number of unoccupied states in the d-band. The diverging mechanisms for S and C{sub 2}H{sub 4} adsorption allow for bimetallic surfaces such as NiRu that enhance ethylene binding without accompanying increases in sulfur binding energy. In contrast, bimetallics such as NiSn and NiW appear to decrease the affinity of the surface for both the reagent and the poison.

Rangan, M.; Yung, M. M.; Medlin, J. W.

2012-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell  

DOE Green Energy (OSTI)

This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

Venkatasubramanian, R. (Research Triangle Inst., Research Triangle Park, NC (United States))

1993-01-01T23:59:59.000Z

162

Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor  

Science Conference Proceedings (OSTI)

Keywords: Ga vacancies, GaN growth, gas feeding method, optical property, rapid thermal chemical vapor deposition (RTCVD), yellow luminescence

Sun Jung Kim; Young Hun Seo; Kee Suk Nahm; Yun Bong Hahn; Hyun Wook Shim; Eun-Kyung Suh; Kee Young Lim; Hyung Jae Lee

1999-08-01T23:59:59.000Z

163

Functional Imprinting Structures on GaN-Based Light-Emitting ...  

Science Conference Proceedings (OSTI)

Keywords: GaN, light-emitting diode (LED), imprinting technology, far-field pattern modulation, light extraction. 1. Introduction. GaN-based light-emitting diodes ...

164

Simplified Production of Ni-Based Oxide Dispersion Strengthened  

Science Conference Proceedings (OSTI)

Austenitic Steel Oxidation in Steam: Alloy Composition and Surface Modification ... Ni-Base Alloys for Use as Components in Advanced-USC Steam Turbines.

165

Development of Ni-Fe Hydrogenation Catalyst from D. Gigas ...  

Development of Ni-Fe Hydrogenation Catalyst from D. Gigas Hydrogenase Note: The technology described above is an early stage opportunity. Licensing rights to this ...

166

Cyclic Oxidation Behavior of Detonation Gun Sprayed Ni-20Cr ...  

Science Conference Proceedings (OSTI)

Presentation Title, Cyclic Oxidation Behavior of Detonation Gun Sprayed Ni-20Cr Coating on a Boiler Steel at 900°C. Author(s), Gagandeep Kaushal, Harpreet ...

167

Hot Tearing in Directionally Solidified Ni-Based Superalloys  

Science Conference Proceedings (OSTI)

It is found that in most of the Ni-based superalloys studied there exists a critical ..... welds: minor elements do not individually cause significant increases in heat

168

Synthesis of Ni-Al Intermetallic Nanoparticle Catalysts by Vacuum ...  

Science Conference Proceedings (OSTI)

... methanol decomposition and methane steam reforming, indicating a possibility to develop Ni-Al intermetallic compounds as catalysts for hydrogen production.

169

Thermochemical Simulation of Cu-Ni Smelting Operations  

Science Conference Proceedings (OSTI)

As a second example, an advanced on-line thermochemical simulation of Xstrata Nickel's Sudbury Ni–Cu sulphide smelting plant will be presented. The on-line ...

170

Study of Supercritical CO2 Emulsion in Ni Electroplating and ...  

Science Conference Proceedings (OSTI)

Presentation Title, Study of Supercritical CO2 Emulsion in Ni Electroplating and Application in Fabrication of Defect-Free Micromechanical Component with High  ...

171

Carbon Fiber with Ni-Coated Reinforced Aluminum Alloy Matrix ...  

Science Conference Proceedings (OSTI)

May 1, 2007 ... Carbon Fiber with Ni-Coated Reinforced Aluminum Alloy Matrix Composites by Bianhua Han, Tianjiao Luo, Chunlin Liang,Guangchun Yao, ...

172

An Exploration of Catalytic Chemistry on Au/Ni(111)  

Science Conference Proceedings (OSTI)

This project explored the catalytic oxidation chemistry that can be effected on a Au/Ni(111) surface alloy. A Au/Ni(111) surface alloy is a Ni(111) surface on which less than 60% of the Ni atoms are replaced at random positions by Au atoms. The alloy is produced by vapor deposition of a small amount of Au onto Ni single crystals. The Au atoms do not result in an epitaxial Au overlayer or in the condensation of the Au into droplets. Instead, Au atoms displace and then replace Ni atoms on a Ni(111) surface, even though Au is immiscible in bulk Ni. The two dimensional structure of the clean Ni surface is preserved. This alloy is found to stabilize an adsorbed peroxo-like O2 species that is shown to be the critical reactant in the low temperature catalytic oxidation of CO and that is suspected to be the critical reactant in other oxidation reactions. This investigation revealed a new, practically important catalyst for CO oxidation that has since been patented.

Sylvia T. Ceyer

2011-12-09T23:59:59.000Z

173

Determination of Atomistic Structure of Ni-Base Single Crystal ...  

Science Conference Proceedings (OSTI)

l-2-1, Sengen, Tsukuba Science City, 305, Japan. *Department of ... The atomic locations of alloying elements in some Ni-base single crystal superalloys have ...

174

Ni-Based Molecular Electrocatalysts for Hydrogen Oxidation  

NLE Websites -- All DOE Office Websites (Extended Search)

Ni-Based Molecular Electrocatalysts for Hydrogen Oxidation Dan DuBois National Renewable Energy Laboratory Nicolet, Y.; de Lacey, A. L.; Vernde, X.; Fernandez, V. M.; Hatchikian,...

175

Lessons Learned in Sputtering TiNi Thin Film  

Science Conference Proceedings (OSTI)

Experimental results have been published in journals and conference proceedings, but as yet TiNi thin film is not commercially available. The author and ...

176

Catalytic Properties of Ni-Al Intermetallic Nanoparticle Catalysts for ...  

Science Conference Proceedings (OSTI)

In order to pursue high catalytic performance of Ni-Al intermetallic ... very high catalytic activity for methanol decomposition and methane steam reforming.

177

Fusion of radioactive $^{132}$Sn with $^{64}$Ni  

E-Print Network (OSTI)

Evaporation residue and fission cross sections of radioactive $^{132}$Sn on $^{64}$Ni were measured near the Coulomb barrier. A large sub-barrier fusion enhancement was observed. Coupled-channel calculations including inelastic excitation of the projectile and target, and neutron transfer are in good agreement with the measured fusion excitation function. When the change in nuclear size and shift in barrier height are accounted for, there is no extra fusion enhancement in $^{132}$Sn+$^{64}$Ni with respect to stable Sn+$^{64}$Ni. A systematic comparison of evaporation residue cross sections for the fusion of even $^{112-124}$Sn and $^{132}$Sn with $^{64}$Ni is presented.

J. F. Liang; D. Shapira; J. R. Beene; C. J. Gross; R. L. Varner; A. Galindo-Uribarri; J. Gomez del Campo; P. A. Hausladen; P. E. Mueller; D. W. Stracener; H. Amro; J. J. Kolata; J. D. Bierman; A. L. Caraley; K. L. Jones; Y. Larochelle; W. Loveland; D. Peterson

2007-04-05T23:59:59.000Z

178

Microstructure Control of Ni Base Alloys with High Volume Fraction ...  

Science Conference Proceedings (OSTI)

hypo-stoichiometric composition of Ni3V, formation of "multi- variant structure ... reasons; one is the high TC (1318 K) at its stoichiometric composition [1, 2], and ...

179

NREL Improves Hole Transport in Sensitized CdS?NiO Nanoparticle...  

NLE Websites -- All DOE Office Websites (Extended Search)

effective sensitizing dyes for p-type NiO. One of the factors limiting the use of NiO for solar cell application is the low hole conductivity in p-NiO. A team of researchers from...

180

Influence of support material on Ni catalysts for propane dry reforming to synthesis gas.  

E-Print Network (OSTI)

??Ni/SiO2 and Ni/Mg(Al)O catalysts with difference metal loadings have been prepared. The activity, selectivity and stability of supported Ni catalysts for propane dry reforming to… (more)

Dai, Xin

2008-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Bonding and gap states at GaAs-oxide interfaces  

Science Conference Proceedings (OSTI)

The nature of bonding and possible causes of Fermi level pinning at high mobility-high dielectric constant oxide GaAs:HfO"2 interfaces are discussed. It is argued that these are atoms with defective bonding, rather than states due to the bulk semiconductor ... Keywords: GaAs, bonding, interface

John Robertson; Liang Lin

2011-04-01T23:59:59.000Z

182

El Ni~no and La Ni~na: Causes and Global Consequences Michael J McPhaden  

E-Print Network (OSTI)

of an El Niño, the Aleutian low pressure system tends to be larger and more intense than in other years

183

Formation of a Novel Ordered Ni3Al Surface Structure by Codeposition on NiAl(110)  

SciTech Connect

The formation of a new type of ordered 2D Ni3Al overlayer by low-temperature codeposition on NiAl(110) is demonstrated by kinetic Monte Carlo simulation of a multisite atomistic lattice-gas model with a precise treatment of surface diffusion kinetics. Simultaneous codeposition with 3?1 Ni?Al yields poor ordering at 300 K but well-ordered structures by ?500??K. Sequential codeposition of Ni then Al yields unmixed core-ring nanostructures at 300 K but strong intermixing and ordering by ?500??K.

Han, Yong; Unal, Baris; Evans, James W.

2012-05-23T23:59:59.000Z

184

Kinetics of Ni Sorption in Soils: Roles of Soil Organic Matter and Ni Precipitation  

E-Print Network (OSTI)

Aqueous Model (WHAM),6,20 which is able to account for the effects of solution chemistry and SOM WHAM VI was integrated into the kinetics model to account for the effects of SOM concentrations by an electrostatic model built in WHAM VI for cation exchange on clay minerals. Ni precipitation kinetics were

Sparks, Donald L.

185

Elastic properties of Pu metal and Pu-Ga alloys  

Science Conference Proceedings (OSTI)

We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

2010-01-05T23:59:59.000Z

186

Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well  

E-Print Network (OSTI)

be applicable to light sources in fiber-optic communication systems.13 However, there have been no reports intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

Jalali. Bahram

187

Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells  

E-Print Network (OSTI)

Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells J. Schörmann,a S and multiple quantum wells. The well widths ranged from 2.5 to 7.5 nm. Samples were grown by rf-plasma assisted wells clear reflection high energy electron diffraction oscillations were observed indicating a two

As, Donat Josef

188

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network (OSTI)

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

189

Development of high power green light emitting diode dies in piezoelectric GaInN/GaN  

E-Print Network (OSTI)

Development of high power green light emitting diode dies in piezoelectric GaInN/GaN Christian in green light emitting diodes is one of the big challenges towards all-solid- state lighting. The prime,3], and commercialization [4,5] of high brightness light emitting diodes LEDs has led to a 1.82 Billion-$/year world market

Detchprohm, Theeradetch

190

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes  

E-Print Network (OSTI)

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

Wetzel, Christian M.

191

Rejuvenation of Ni-based Superalloys GTD444(DS) and René N5(SX)  

Science Conference Proceedings (OSTI)

D3: Weld Solidification Behavior of Ni-base Superalloys for Use in Advanced Supercritical Coal-fired Power Plants · D4: Sputtered Ni-base Superalloys for ...

192

Ni-Base Alloys for Use as Components in Advanced-USC Steam ...  

Science Conference Proceedings (OSTI)

Symposium, Properties, Processing, and Performance of Steels and Ni-Based Alloys for Advanced Steam Conditions. Presentation Title, Ni-Base Alloys for Use

193

Low temperature epitaxial growth of Ge on cube- textured Ni  

SciTech Connect

Quasi- single crystal Ge films were grown on [001]<010> textured Ni substrate at a temperature of 350 oC using an insulating buffer layer of CaF2. A direct deposition of Ge on Ni at 350 oC was shown to alloy with Ni. From x- ray pole figure analysis, it was shown that Ge grew epitaxially with the same orientation as CaF2 and the dispersions in the out- of- plane and in- plane directions were found to be 1.7 0.1o and 6 1o, respectively. In the out- of- plane direction, Ge[111]||CaF2[111]||Ni[001]. In addition, the Ge consisted of four equivalent in- plane oriented domains such that two mutually orthogonal directions: Ge 211 and Ge 011 are parallel to mutually orthogonal directions: Ni 110 and Ni 110 , respectively of the Ni(001) surface. This was shown to be originated from the four equivalent in- plane oriented domains of CaF2 created to minimize the mismatch strain between CaF2 and Ni in those directions.

GIARE, C [Rensselaer Polytechnic Institute (RPI); Palazzo, J [Rensselaer Polytechnic Institute (RPI); Goyal, Amit [ORNL; WANG, G [Rensselaer Polytechnic Institute (RPI); LU, T [Rensselaer Polytechnic Institute (RPI)

2012-01-01T23:59:59.000Z

194

Lanthanide Al-Ni base Ericsson cycle magnetic refrigerants  

DOE Patents (OSTI)

A magnetic refrigerant for a magnetic refrigerator using the Ericsson thermodynamic cycle comprises DyAlNi and (Gd{sub 0.54}Er{sub 0.46})AlNi alloys having a relatively constant {Delta}Tmc over a wide temperature range. 16 figs.

Gschneidner, K.A. Jr.; Takeya, Hiroyuki

1995-10-31T23:59:59.000Z

195

Ni-Pt silicide formation through Ti mediating layers  

Science Conference Proceedings (OSTI)

With Ni"1"-"xPt"xSi, the variation in queue time between the final surface cleaning and Ni-Pt deposition represents a significant manufacturability issue. A short queue time is often difficult to maintain, leading to the formation of an oxide layer on ... Keywords: Mediated reaction, Nickel silicide, Oxidation, Titanium

Paul Besser; Christian Lavoie; Ahmet Ozcan; Conal Murray; Jay Strane; Keith Wong; Michael Gribelyuk; Yun-Yu Wang; Christopher Parks; Jean Jordan-Sweet

2007-11-01T23:59:59.000Z

196

Lanthanide Al-Ni base Ericsson cycle magnetic refrigerants  

DOE Patents (OSTI)

A magnetic refrigerant for a magnetic refrigerator using the Ericsson thermodynamic cycle comprises DyAlNi and (Gd.sub.0.54 Er.sub.0.46)AlNi alloys having a relatively constant .DELTA.Tmc over a wide temperature range.

Gschneidner, Jr., Karl A. (Ames, IA); Takeya, Hiroyuki (Ibaraki, JP)

1995-10-31T23:59:59.000Z

197

Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells  

Science Conference Proceedings (OSTI)

We investigate the incorporation of nitrogen into (Ga,In)Sb grown on GaSb and report room temperature photoluminescence from GaInSb(N) quantum wells. X-ray diffraction and channeling nuclear reaction analysis, together with Rutherford backscattering, were employed to identify the optimal molecular beam epitaxial growth conditions that minimized the incorporation of non-substitutional nitrogen into GaNSb. Consistent with this hypothesis, GaInSb(N) quantum wells grown under the conditions that minimized non-substitutional nitrogen exhibited room temperature photoluminescence, indicative of significantly improved radiative efficiency. Further development of this material system could enable type-I laser diodes emitting throughout the (3-5 {mu}m) wavelength range.

Nair, Hari P.; Crook, Adam M.; Bank, Seth R. [Microelectronics Research Center, Electrical and Computer Engineering, University of Texas at Austin, 10100 Burnet Rd, Austin, Texas 78712 (United States); Yu, Kin M. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2012-01-09T23:59:59.000Z

198

GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy  

Science Conference Proceedings (OSTI)

We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum dots grown by molecular beam epitaxy. Various nanostructures are observed as a function of the growth parameters. During growth, relaxation of the high local strain fields of the nanostructures plays an important role in their formation. Pyramidal dots with a high Sb content are often accompanied by threading dislocations above them. GaSb ring formation is favored by the use of a thin GaAs first cap layer and a high growth temperature of the second cap layer. At these capping conditions, strain-driven Sb diffusion combined with As/Sb exchange and Sb segregation remove the center of a nanostructure, creating a ring. Clusters of GaSb without a well defined morphology also appear regularly, often with a highly inhomogeneous structure which is sometimes divided up in fragments.

Smakman, E. P.; Garleff, J. K.; Rambabu, P.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Eindhoven 5612 AZ (Netherlands); Young, R. J.; Hayne, M. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2012-04-02T23:59:59.000Z

199

Ultrathin Silver Films on Ni(111)  

SciTech Connect

The growth and atomic structure of ultrathin silver films on Ni(111) was investigated by low-energy electron microscopy and diffraction (LEEM/LEED) as well as intensity-voltage [I(V)]-LEEM in the growth temperature range between 470 and 850 K. We find that silver grows in a Stranski-Krastanov mode with a two monolayer thin wetting layer which takes on a p(7 x 7) reconstruction at temperatures lower than 700 K and a ({radical}52 x {radical}52)R13.9{sup o} reconstruction at higher temperatures. The occurrence of the two distinct reconstructions is shown to have profound implications for the growth characteristics of films exhibiting thicknesses of one and two monolayers. The nanoscale I(V) characteristics of the films were analyzed by means of multiple-scattering calculations based on dynamical LEED theory. Furthermore, the vertical interatomic spacing at the interface between the Ag film and the Ni substrate was determined to (2.8 {+-} 0.1) {angstrom} for all film thicknesses (<13 ML) while the uppermost silver layer relaxes by about (4 {+-} 1)% toward the crystal.

Meyer, A.; Flege, J; Rettew, R; Senanayake, S; Schmidt, T; Alamgir, F; Falta, J

2010-01-01T23:59:59.000Z

200

Ultrathin Silver Films on Ni(111)  

SciTech Connect

The growth and atomic structure of ultrathin silver films on Ni(111) was investigated by low-energy electron microscopy and diffraction (LEEM/LEED) as well as intensity-voltage [I(V)]-LEEM in the growth temperature range between 470 and 850 K. We find that silver grows in a Stranski-Krastanov mode with a two monolayer thin wetting layer which takes on a p(7 x 7) reconstruction at temperatures lower than 700 K and a ({radical}52 x {radical}52)R13.9{sup o} reconstruction at higher temperatures. The occurrence of the two distinct reconstructions is shown to have profound implications for the growth characteristics of films exhibiting thicknesses of one and two monolayers. The nanoscale I(V) characteristics of the films were analyzed by means of multiple-scattering calculations based on dynamical LEED theory. Furthermore, the vertical interatomic spacing at the interface between the Ag film and the Ni substrate was determined to (2.8 {+-} 0.1) {angstrom} for all film thicknesses (<13 ML) while the uppermost silver layer relaxes by about (4 {+-} 1)% toward the crystal.

Flege, J.I.; Senanayake, S.; Meyer, A.; Rettew, R.E.; Schmidt, T.; Alamgir, F.M.; Falta, J.

2010-08-16T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Development of Co-Ni-Ga Ferromagnetic Shape Memory Alloys (FSMAs) by Investigating the Effects of Solidification Processing Parameters  

E-Print Network (OSTI)

meaning that much magnetic energy is dissipated during theNote:Ku: mechanical energy, MsH: magnetic energy) [mechanical energy, MsH: magnetic energy) [57]. Unlike the

Kalaantari, Haamun

2013-01-01T23:59:59.000Z

202

Effect of Sb on the Properties of GaInP Top Cells (Presentation)  

DOE Green Energy (OSTI)

The summary of this report is that: (1) Sb can be used to increase V{sub oc} of a GaInP top cell; (2) the photovoltaic quality of GaInP is relatively unaffected by the presence of Sb; and (3) Sb-doped GaInP/GaAs tandem cells show promise for achieving efficiencies over 32%.

Olson, J. M.; McMahon, W. E.; Kurtz, S.

2006-05-01T23:59:59.000Z

203

Formation of a Novel Ordered Ni3Al Surface Structure by Codeposition on NiAl(110)  

E-Print Network (OSTI)

The formation of a new type of ordered 2D Ni3Al overlayer by low-temperature codeposition on NiAl(110) is demonstrated by kinetic Monte Carlo simulation of a multisite atomistic lattice-gas model with a precise treatment ...

Han, Yong

204

Evaluation of electron capture reaction rates in Ni isotopes in stellar environments  

SciTech Connect

Electron capture rates in Ni isotopes are studied in stellar environments, that is, at high densities and high temperatures during the core-collapse and postbounce explosive nucleosynthesis in supernovae. Reaction rates in {sup 58}Ni and {sup 60}Ni, as well as in {sup 56}Ni, {sup 62}Ni, and {sup 64}Ni, are evaluated by shell-model calculations with the use of a new shell-model Hamiltonian in the fp shell, GXPF1J. While the previous shell-model calculations failed to reproduce the measured peaks of Gamow-Teller strength in {sup 58}Ni and {sup 60}Ni, the present new Hamiltonian is found to reproduce them very well, as well as the capture rates obtained from the observed strengths. Strengths and energies of the Gamow-Teller transitions in {sup 56}Ni, {sup 62}Ni, and {sup 64}Ni are also found to be consistent with the observations.

Suzuki, Toshio [Department of Physics and Graduate School of Integrated Basic Sciences, College of Humanities and Sciences, Nihon University Sakurajosui 3-25-40, Setagaya-ku, Tokyo 156-8550 (Japan); Center for Nuclear Study, University of Tokyo, Hirosawa, Wako-shi, Saitama 351-0198 (Japan); National Astronomical Observatory of Japan, Mitaka, Tokyo 181-8588 (Japan); Honma, Michio [Center for Mathematical Sciences, University of Aizu, Aizu-Wakamatsu, Fukushima 965-8580 (Japan); Mao, Helene [ENSPS, Pole API-Parc d'Innovation, Boulevard Sebastien Brant, BP 10413, F-67412 Illkirch Cedex (France); Otsuka, Takaharu [Department of Physics and Center for Nuclear Study, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, Michigan 48824 (United States); Kajino, Toshitaka [National Astronomical Observatory of Japan, Mitaka, Tokyo 181-8588 (Japan); Deaprtment of Astronomy, Graduate School of Science, University of Tokyo, Bunkyo-ku, Tokyo 113-0033 (Japan)

2011-04-15T23:59:59.000Z

205

Dielectrics for GaN based MIS-diodes  

SciTech Connect

GaN MIS diodes were demonstrated utilizing AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as insulators. A 345 {angstrom} of AlN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a wavemat ECR N2 plasma. For the Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) growth, a multi MBE chamber was used and a 195 {angstrom} oxide is E-beam evaporated from a single crystal source of Ga{sub 5}Gd{sub 3}O{sub 12}. The forward breakdown voltage of AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) diodes are 5V and 6V, respectively, which are significantly improved from {approximately} 1.2 V of schottky contact. From the C-V measurements, both kinds of diodes showed good charge modulation from accumulation to depletion at different frequencies. The insulator GaN interface roughness and the thickness of the insulator were measured with x-ray reflectivity.

Ren, F.; Abernathy, C.R.; MacKenzie, J.D. [Univ. of Florida, Gainesville, FL (United States)] [and others

1998-02-01T23:59:59.000Z

206

Atomic hydrogen cleaning of polarized GaAs photocathodes  

DOE Green Energy (OSTI)

Atomic hydrogen cleaning followed by heat cleaning at 450 C was used to prepare negative-electron-affinity GaAs photocathodes. When hydrogen ions were eliminated, quantum efficiencies of 15% were obtained for bulk GaAs cathodes, higher than the results obtained using conventional 600 C heat cleaning. The low-temperature cleaning technique was successfully applied to thin, strained GaAs cathodes used for producing highly polarized electrons. No depolarization was observed even when the optimum cleaning time of about 30 seconds was extended by a factor of 100.

Maruyama, Takashi

2003-04-03T23:59:59.000Z

207

Modification of Ni state to promote the stability of Ni-Al{sub 2}O{sub 3} catalyst in methane decomposition to produce hydrogen and carbon nanofibers  

SciTech Connect

The methodology was illustrated for modifying the state of Ni to promote the stability of the coprecipitated Ni-Al{sub 2}O{sub 3} catalyst via incorporating ZnO and Cu in methane decomposition to produce hydrogen and carbon nanofibers. The influences of the incorporation on the state of Ni were examined with XRD, TPR, XPS and TEM. For the incorporation of ZnO, ZnAl{sub 2}O{sub 4} spinel-like structure could be formed in the interface between ZnO and Al{sub 2}O{sub 3}. The interaction between Ni and the ZnAl{sub 2}O{sub 4} structure can promote both the activity and the stability of Ni in methane decomposition. The formation of a Ni-Cu alloy from Ni and the incorporated Cu decreases the activity of Ni, however, promotes the stability pronouncedly. - Graphical abstract: Highlights: Black-Right-Pointing-Pointer Methodology for modifying Ni state of coprecipitated Ni-Al{sub 2}O{sub 3} was illustrated. Black-Right-Pointing-Pointer Influence of incorporating ZnO/Cu on Ni state of Ni-Al{sub 2}O{sub 3} was compared. Black-Right-Pointing-Pointer Influence of modifying Ni state on performance of Ni-Al{sub 2}O{sub 3} was investigated.

Chen Jiuling, E-mail: cjlchen@yahoo.com [Department of Catalysis Science and Technology, School of Chemical Engineering, Tianjin University, Tianjin 300072 (China); Qiao Yuanhua; Li Yongdan [Department of Catalysis Science and Technology, School of Chemical Engineering, Tianjin University, Tianjin 300072 (China)

2012-07-15T23:59:59.000Z

208

Outdoor Testing of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied  

DOE Green Energy (OSTI)

In this study, we measure the performance of GaInP2/GaAs tandem cells under direct beam sunlight outdoors in order to quantify their sensitivity to both spectral variation and GaInP2 top-cell thickness. A set of cells with five different top-cell thicknesses was mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for either the ASTM G-173 direct (G-173D) spectrum or the "air mass 1.5 global" (AM1.5G) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra with the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

McMahon, W. E.; Emergy, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

2005-08-01T23:59:59.000Z

209

On-Sun Comparison of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied  

DOE Green Energy (OSTI)

This study compares the on-sun performance of a set of GaInP2/GaAs tandem cells with different GaInP2 top-cell thicknesses. Because high-efficiency III-V cells are best suited to concentrating photovoltaic (CPV) applications, the cells were mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for an ''air mass 1.5 global'' (AM 1.5G) or a ''low aerosol optical depth'' (Low AOD) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra to predict the correct result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

McMahon, W. E.; Emery, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

2005-02-01T23:59:59.000Z

210

lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells  

E-Print Network (OSTI)

lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells H. C. Chui, S. M. Lord report the first observation of intersubband transitions in In,Ga, -#s(y=O.3,0.5)/ AlGaAs quantum wells. These quantum wells were grown on a GaAs substrate with a linearly graded InGaAs buffer to achieve strain

Fejer, Martin M.

211

Geometric and Electronic Structures of the Ni(I) and Methyl-Ni(III)  

NLE Websites -- All DOE Office Websites (Extended Search)

9 9 Geometric and Electronic Structures of the Ni(I) and Methyl-Ni(III) Intermediates of Methyl-Coenzyme M Reductase Methyl-coenzyme M reductase (MCR) from methanogenic archaea catalyzes the terminal step in biological methane synthesis. Using coenzyme B (CoBSH) as the two-electron donor, MCR reduces methyl-coenzyme M (methyl-SCoM) to form methane and the heterodisulfide product, CoBS-SCoM. MCR contains an essential redox active nickel tetrapyrrolic cofactor called coenzyme F430 at its active site, which is active in the reduced Ni(I) state (MCRred1). All of the biologically generated methane, amounting to 1 billion tons per annum globally, is formed by MCR. Furthermore, recent evidence indicates that anaerobic methane oxidation is also catalyzed by MCR and occurs by a reversal of the methane synthesis reaction. Methane is a potent greenhouse gas, trapping 20 times more heat than CO2. In addition, methane is also an important and clean fuel as it produced the least amount of CO2 per unit of heat released. Thus, it is critically important to understand the mechanism of formation of the smallest hydrocarbon in nature.

212

Mesoscale assembly of NiO nanosheets into spheres  

SciTech Connect

NiO solid/hollow spheres with diameters about 100 nm have been successfully synthesized through thermal decomposition of nickel acetate in ethylene glycol at 200 deg. C. These spheres are composed of nanosheets about 3-5 nm thick. Introducing poly(vinyl pyrrolidone) (PVP) surfactant to reaction system can effectively control the products' morphology. By adjusting the quantity of PVP, we accomplish surface areas-tunable NiO assembled spheres from {approx}70 to {approx}200 m{sup 2} g{sup -1}. Electrochemical tests show that NiO hollow spheres deliver a large discharge capacity of 823 mA h g{sup -1}. Furthermore, these hollow spheres also display a slow capacity-fading rate. A series of contrastive experiments demonstrate that the surface area of NiO assembled spheres has a noticeable influence on their discharge capacity. - Graphical abstract: The mesoscale assembly of NiO nanosheets into spheres have been achieved by a solvothermal method. N{sub 2} adsorption/desorption isotherms show the S{sub BET} of NiO is tunable. NiO spheres show large discharge capacity and slow capacity-fading rate.

Zhang Meng, E-mail: meng_zhang@haut.edu.c [School of Materials Science and Engineering, Henan University of Technology, Zhengzhou, Henan 450007 (China); Yan Guojin; Hou Yonggai; Wang Chunhua [School of Materials Science and Engineering, Henan University of Technology, Zhengzhou, Henan 450007 (China)

2009-05-15T23:59:59.000Z

213

Realization of compressively strained GaN films grown on Si(110) substrates by inserting a thin AlN/GaN superlattice interlayer  

Science Conference Proceedings (OSTI)

We investigate the strain properties of GaN films grown by plasma-assisted molecular beam epitaxy on Si(110) substrates. It is found that the strain of the GaN film can be converted from a tensile to a compressive state simply by inserting a thin AlN/GaN superlattice structure (SLs) within the GaN film. The GaN layers seperated by the SLs can have different strain states, which indicates that the SLs plays a key role in the strain modulation during the growth and the cooling down processes. Using this simple technique, we grow a crack-free GaN film exceeding 2-{mu}m-thick. The realization of the compressively strained GaN film makes it possible to grow thick GaN films without crack generation on Si substrates for optic and electronic device applications.

Shen, X. Q.; Takahashi, T.; Kawashima, H.; Ide, T.; Shimizu, M. [Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Central 2, Tsukuba-shi, Ibaraki 305-8568 (Japan)

2012-07-16T23:59:59.000Z

214

Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching  

E-Print Network (OSTI)

The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into ...

Chen, A.

215

Overall Photocatalytic Water Splitting with NiOx-SrTiO3 – A Revised Mechanism  

Science Conference Proceedings (OSTI)

NiOx (0 water splitting under UV light. The established mechanism for this and many other NiOx containing catalysts assumes water oxidation to occur at the early transition metal oxide and water reduction at NiOx. Here we show that NiOx-STO is more likely a three component Ni-STO-NiO catalyst, in which STO absorbs the light, Ni reduces protons, and NiO oxidizes water. This interpretation is based on systematic H2/O2 evolution tests of appropriately varied catalyst compositions using oxidized, chemically and photochemically added nickel and NiO nanoparticle cocatalysts. Surface photovoltage (SPV) measurements reveal that Ni(0) serves as an electron trap (site for water reduction) and that NiO serves as a hole trap (site for water oxidation). Electrochemical measurements show that the overpotential for water oxidation correlates with NiO content, whereas the water reduction overpotential depends on Ni content. Photodeposition experiments with NiCl2 and H2PtCl6 on NiO-STO show that electrons are available on the STO surface, not on the NiO particles. Based on photoelectrochemistry, both NiO and Ni particles suppress the Fermi level in STO, but the effect of this shift on catalytic activity is not clear. Overall, the results suggest a revised role for NiO in NiOx-STO and in many other nickel-containing water splitting systems, including NiOx-La:KTaO3, and many layered perovskites.

Townsend, Troy K.; Browning, Nigel D.; Osterloh, Frank

2012-11-01T23:59:59.000Z

216

Structural and magnetic properties of nanocrystalline Fe–Si–Ni ...  

Science Conference Proceedings (OSTI)

Aerosol Route Synthesis of Copper Oxide Nanoparticles Using Copper Nitrate Solution · AlGaAs-Based Optical ... Defect Energetics and Fission Product Transport in ZrC ... Enhancing Mineral Beneficiation by High Intensity Power Ultrasound.

217

Graphene Monolayer Rotation on Ni(111) Facilities Bilayer Graphene Growth  

Science Conference Proceedings (OSTI)

Synthesis of bilayer graphene by chemical vapor deposition is of importance for graphene-based field effect devices. Here, we demonstrate that bilayer graphene preferentially grows by carbon-segregation under graphene sheets that are rotated relative to a Ni(111) substrate. Rotated graphene monolayer films can be synthesized at growth temperatures above 650 C on a Ni(111) thin-film. The segregated second graphene layer is in registry with the Ni(111) substrate and this suppresses further C-segregation, effectively self-limiting graphene formation to two layers.

Batzill M.; Sutter P.; Dahal, A.; Addou, R.

2012-06-11T23:59:59.000Z

218

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta, GA Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA October 7, 2013 - 3:16pm Addthis Energy on My Mind / FUPWG / Atlanta, GA / May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta, Georgia Tuesday, May 2, 2006 5:00 - 6:30 Steering Committee meeting in the Danube Tigris Room 6:30 until... Networking dinner at the Marriott Wednesday, May 3, 2006 7:45 am Registration/Continental Breakfast 8:30 - 8:45 Welcome from Suzanne Sitherwood, SVP, Southern Operations, President, Atlanta Gas Light, Chattanooga Gas & Florida City Gas 8:45 - 9:00 FEMP Southeast Regional Office Welcome Traci Leath, FEMP 9:00 - 9:45 Washington Update David McAndrew, FEMP 9:45 - 10:15 Break - Networking 10:15 - 11:20 Navy Technical Program Update Paul Kistler, U.S. Navy

219

Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep...

220

Lattice vibrations of pure and doped GaSe  

Science Conference Proceedings (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

HH5, Antiferromagnetic Interlayer Exchange Couplings in Ga  

Science Conference Proceedings (OSTI)

Author(s), Sun Jae Chung, Sanghoon Lee, Brian J. Kirby, Julie A. Borchers, ... LATE NEWS: KK3, Non-Catalytic Synthesis of GaN Nanostructures at Low ...

222

Preparation of GaAs photocathodes at low temperature  

SciTech Connect

The preparation of an atomically clean surface is a necessary step in the formation of negative electron affinity (NEA) GaAs. Traditional methods to this end include cleaving, heat cleaning and epitaxial growth. Cleaving has the advantage of yielding a fresh surface after each cleave, but is limited to small areas and is not suitable for specialized structures. Heat cleaning is both simple and highly successful, so it is used as a preparation method in virtually all laboratories employing a NEA source on a regular basis. Due to its high cost and complexity, epitaxial growth of GaAs with subsequent in vacuo transfer is not a practical solution for most end users of GaAs as a NEA electron source. While simple, the heating cleaning process has a number of disadvantages. Here, a variety of cleaning techniques related to preparation of an atomically clean GaAs surface without heating to 600 C are discussed and evaluated.

Mulhollan, G.; Clendenin, J.; Tang, H.

1996-10-01T23:59:59.000Z

223

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

Gasoline and Diesel Fuel Update (EIA)

Trinidad and Tobago (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul...

224

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

Gasoline and Diesel Fuel Update (EIA)

Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780...

225

Elba Island, GA Liquefied Natural Gas Total Imports (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

Liquefied Natural Gas Total Imports (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Total Imports (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5...

226

GaAs Films Prepared by RF-Magnetron Sputtering  

DOE Green Energy (OSTI)

The authors reported on the optical absorption, adhesion, and microstructure of RF-magnetron sputtered films of hydrogenated amorphous and microcrystalline GaAs films for the 1 to 25 {micro}m infrared wavelength rate. Sputtering parameters which were varied include sputtering power, temperature and pressure, and hydrogen sputtering-gas concentration. TEM results show a sharp transition from purely amorphous GaAs to a mixture of microcrystalline GaAs in an amorphous matrix at 34 {+-} 2 C. By optimizing the sputtering parameters, the optical absorption coefficient can be decreased below 100 cm{sup -1} for wavelengths greater than about 1.25 {micro}m. These results represent the lowest reported values of optical absorption for sputtered films of GaAs directly measured by spectrophotometry for the near-infrared wavelength region.

L.H. Ouyang; D.L. Rode; T. Zulkifli; B. Abraham-Shrauner; N. Lewis; M.R. Freeman

2001-08-01T23:59:59.000Z

227

Micro Raman Spectroscopy of Annealed Erbium Implanted GaN  

E-Print Network (OSTI)

Wurtzite GaN epilayers grown by metal organic chemical vapor deposition on sapphire substrates were subsequently ion implanted with Er to a dose of 5×10ą? cm?˛. The implanted samples were annealed in nitrogen atmosphere ...

Vajpeyi, Agam P.

228

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Equatorial Guinea (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Equatorial Guinea (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3...

229

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Nigeria (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Nigeria (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6...

230

Cathodoluminescence Microanalysis of Suspended GaN Nano ...  

Science Conference Proceedings (OSTI)

CL from bulk GaN is dominated by the ~3.4 eV near-band-edge emission. In contrast, the suspended nano-membranes emit a broad defect associated emission ...

231

BB2, Novel Cs-Free GaN Photocathodes  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters · Hide details for [

232

Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN  

Science Conference Proceedings (OSTI)

We investigate, via time-resolved photoluminescence, the temperature-dependence of charge carrier recombination mechanisms in nonpolar (Al,Ga)N/GaN single quantum wells (QWs) grown via molecular beam epitaxy on the a-facet of bulk GaN crystals. We study the influence of both QW width and barrier Al content on the dynamics of excitons in the 10-320 K range. We first show that the effective lifetime of QW excitons {tau} increases with temperature, which is evidence that nonradiative mechanisms do not play any significant role in the low-temperature range. The temperature range for increasing {tau} depends on the QW width and Al content in the (Al,Ga)N barriers. For higher temperatures, we observe a reduction in the QW emission lifetime combined with an increase in the decay time for excitons in the barriers, until both exciton populations get fully thermalized. Based on analysis of the ratio between barrier and QW emission intensities, we demonstrate that the main mechanism limiting the radiative efficiency in our set of samples is related to nonradiative recombination in the (Al,Ga)N barriers of charge carriers that have been thermally emitted from the QWs.

Corfdir, P.; Dussaigne, A.; Giraud, E.; Ganiere, J.-D.; Grandjean, N.; Deveaud-Pledran, B. [Institute of Condensed Matter Physics, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Teisseyre, H. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Suski, T.; Grzegory, I. [Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Lefebvre, P. [Laboratoire Charles Coulomb - UMR5221 - CNRS - Universite Montpellier 2, 34095 Montpellier (France)

2012-02-01T23:59:59.000Z

233

Modeling of InGaSb thermophotovoltaic cells and materials  

DOE Green Energy (OSTI)

A closed form computer program has been developed for the simulation and optimization of In{sub x}Ga{sub 1{minus}x}Sb thermophotovoltaic cells operating at room temperature. The program includes material parameter models of the energy bandgap, optical absorption constant, electron and hole mobility, intrinsic carrier concentration and index of refraction for any composition of GaInSb alloys.

Zierak, M.; Borrego, J.M.; Bhat, I.; Gutmann, R.J. [Rensselaer Polytechnic Inst., Troy, NY (United States); Charache, G. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

234

SEU design consideration for MESFETs on LT GaAs  

SciTech Connect

Computer simulation results are reported on transistor design and single-event charge collection modeling of metal-semiconductor field effect transistors (MESFETs) fabricated in the Vitesse H-GaAsIII{reg_sign} process on Low Temperature grown (LT) GaAs epitaxial layers. Tradeoffs in Single Event Upset (SEU) immunity and transistor design are discussed. Effects due to active loads and diffusion barriers are examined.

Weatherford, T.R.; Radice, R.; Eskins, D. [Naval Postgraduate School, Monterey, CA (United States)] [and others

1997-12-01T23:59:59.000Z

235

Influence of defect formation as a result of incorporation of a Mn {delta} layer on the photosensitiviy spectrum of InGaAs/GaAs quantum wells  

Science Conference Proceedings (OSTI)

The influence of defect formation upon the deposition of a Mn {delta} layer and a GaAs coating layer (with the use of laser evaporation) on the photosensitivity spectra of heterostructures with InGaAs/GaAs quantum wells located in the near-surface region has been studied.

Gorshkov, A. P., E-mail: gorskovap@phys.unn.ru; Karpovich, I. A.; Pavlova, E. D.; Kalenteva, I. L. [Lobachevsky State University of Nizhny Novgorod (Russian Federation)

2012-02-15T23:59:59.000Z

236

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures  

E-Print Network (OSTI)

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures, U.S.A. ABSTRACT Characterization of operational AlGaInN heterostructure light emitting diodes (LEDs the device lifetime in a non-destructive mode. INTRODUCTION Group ­ III nitride light emitting diodes (LEDs

Wetzel, Christian M.

237

$^{64}$Ni+$^{64}$Ni fusion reaction calculated with the density-constrained time-dependent Hartree-Fock formalism  

E-Print Network (OSTI)

We study fusion reactions of the $^{64}$Ni+$^{64}$Ni system using the density-constrained time-dependent Hartree-Fock (TDHF) formalism. In this formalism the fusion barriers are directly obtained from TDHF dynamics. In addition, we incorporate the entrance channel alignments of the slightly deformed (oblate) $^{64}$Ni nuclei due to dynamical Coulomb excitation. We show that alignment leads to a fusion barrier distribution and alters the naive picture for defining which energies are actually sub-barrier. We also show that core polarization effects could play a significant role in fusion cross section calculations.

A. S. Umar; V. E. Oberacker

2007-09-25T23:59:59.000Z

238

Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells  

Science Conference Proceedings (OSTI)

Exciton photoluminescence spectra, photoluminescence excitation spectra, and magnetophotoluminescence spectra of single (GaAs/AlGaAs/ZnMnSe) and double (GaAs/AlGaAs/ZnSe/ZnCdMnSe) heterovalent quantum wells formed by molecular beam epitaxy are studied. It is shown that the exciton absorption spectrum of such quantum wells mainly reproduces the resonant exciton spectrum expected for usual quantum wells with similar parameters, while the radiative exciton recombination have substantial distinctions, in particular the additional localization mechanism determined by defects generated by heterovalent interface exists. The nature of these localization centers is not currently clarified; their presence leads to broadening of photoluminescence lines and to an increase in the Stokes shift between the peaks of luminescence and absorption, as well as determining the variation in the magnetic g factor of bound exciton complexes.

Toropov, A. A., E-mail: toropov@beam.ioffe.ru; Kaibyshev, V. Kh.; Terent'ev, Ya. V.; Ivanov, S. V.; Kop'ev, P. S. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

2011-02-15T23:59:59.000Z

239

Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires  

SciTech Connect

Recombination processes in GaP/GaNP core/shell nanowires (NWs) grown on a Si substrate by molecular beam epitaxy are examined using a variety of optical characterization techniques, including cw- and time-resolved photoluminescence and optically detected magnetic resonance (ODMR). Superior optical quality of the structures is demonstrated based on the observation of intense emission from a single NW at room temperature. This emission is shown to originate from radiative transitions within N-related localized states. From ODMR, growth of GaP/GaNP NWs is also found to facilitate formation of complex defects containing a P atom at its core that act as centers of competing non-radiative recombination.

Dobrovolsky, A.; Stehr, J. E.; Chen, S. L.; Chen, W. M.; Buyanova, I. A. [Department of Physics, Chemistry and Biology, Linkoeping University, S-581 83 Linkoeping (Sweden); Kuang, Y. J. [Department of Physics, University of California, La Jolla, California 92093 (United States); Sukrittanon, S. [Graduate Program of Materials Science and Engineering, La Jolla, California 92093 (United States); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, La Jolla, California 92093 (United States)

2012-10-15T23:59:59.000Z

240

Optical anisotropy of GaSb type-II nanorods on vicinal (111)B GaAs  

SciTech Connect

We form self-assembled GaSb type-II nanorods on a vicinal (111)B GaAs substrate by molecular beam epitaxy and study their optical anisotropy. The GaSb nanorods are elongated and aligned along the [-1 0 1] direction, where the average length, width, and height are about 84, 30, and 2.5 nm. In polarized photoluminescence (PL) measurements, the peak of the GaSb nanorods is observed at about 1.1 eV, where the PL intensity is largest for the [-1 0 1] polarization and smallest for the polarization perpendicular to it. The degree of polarization is more than 20% and depends on the recombination energy. By comparing with a theoretical model based on 4 x 4 Luttinger-Kohn Hamiltonian, we find that the experimental results are explained by considering the Sb/As inter-diffusion and the nanorod height distribution.

Kawazu, Takuya; Noda, Takeshi; Mano, Takaaki; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Akiyama, Yoshihiro [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya (Japan); Sakaki, Hiroyuki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya (Japan)

2011-12-05T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

EE9, MBE Grown InGaAsSbN/GaSb Single Quantum Wells for Mid ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

242

II3, 2?m Thick Device Quality GaN on Si(111) Using AlGaN Graded ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

243

JJ1, Internal Quantum Efficiency of Polar and Non-Polar GaInN/GaN ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

244

Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods  

E-Print Network (OSTI)

Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency droop induced by density-activated defect recombination in nanorod structure of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that the improvement is a combined effect of the amendment contributed by lateral carrier confinement and the deterioration made by surface trapping.

Shi, Chentian; Yang, Fan; Park, Min Joo; Kwak, Joon Seop; Jung, Sukkoo; Choi, Yoon-Ho; Wang, Xiaoyong; Xiao, Min

2013-01-01T23:59:59.000Z

245

SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors  

Science Conference Proceedings (OSTI)

Hydrothermally grown SnO2 was integrated with AlGaN/GaN high electron mobility transistor (HEMT) sensor as the gate electrode for oxygen detection. The crystalline of the SnO2 was improved after annealing at 400 C. The grain growth kinetics of the SnO2 nanomaterials, together with the O2 gas sensing properties and sensing mechanism of the SnO2 gated HEMT sensors were investigated. Detection of 1% oxygen in nitrogen at 100 C was possible. A low operation temperature and low power consumption oxygen sensor can be achieved by combining the SnO2 films with the AlGaN/GaN HEMT structure

Hung, S.T. [Feng Chia University, Taichung, Taiwan; Chung, Chi-Jung [Feng Chia University, Taichung, Taiwan; Chen, Chin Ching [University of Florida, Gainesville; Lo, C. F. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

246

The Application of CALPHAD Calculations to Ni-Based Superalloys  

Science Conference Proceedings (OSTI)

The Cr content was raised from 20 to 24wt% to increase coal ash corrosion resistance. 2. ..... Ni-based Alloys”, Univ.Cambridge report to Rolls-Royce plc.,. Derby ...

247

Electrochemically Preparing of Ni-Fe Alloys in Molten Sodium ...  

Science Conference Proceedings (OSTI)

A Pilot-plant Scale Test of Coal-based Rotary Kiln Direct Reduction of Laterite Ore for Fe-Ni Production · A Pilot-plant Scale Test on DRI Preparation from ...

248

XPS study of Ni-Fe manganite thermistor material  

SciTech Connect

The resistivity of the as-fabricated thermistor material, nickel-iron-manganite, changes during initial aging in the temperature range of 150-300{degrees}C before becoming stable. X-ray photoelectron spectroscopy (XPS) was used to determine if any valency change or chemical shift of the cations or oxygen occurred after aging. The goal of the study was to identify any ionic changes that might affect thermistor stability. The only observed changes in 2p{sub 3/2} peaks due to aging were those related to Ni ions; the same peaks for Mn, Fe, and O remained unchanged. The changes in the Ni 2p{sub 3/2} peak may be related to: (a) the migration of Ni{sup 2+} ions from octahedral to tetrahedral sites, (b) subtle changes in the energy states of Ni{sup 2+} which promoted a more stable ionic structure, and/or (c) the presence of Ni{sup 3+} ions, some of which revert back to Ni{sup 2+}.

Braski, D.N. [Oak Ridge National Lab., TN (United States); Osborne, N.R. [Univ. of Dayton Research Institute, OH (United States); Zurbuchen, J.M. [Yellow Springs Instruments, Inc., OH (United States)

1995-03-01T23:59:59.000Z

249

Transformation Induced Fatigue of Ni-Rich NiTi Shape Memory Alloy Actuators  

E-Print Network (OSTI)

In this work the transformation induced fatigue of Ni-rich NiTi shape memory alloys (SMAs) was investigated. The aerospace industry is currently considering implementing SMA actuators into new applications. However, before any new applications can be put into production they must first be certified by the FAA. Part of this certification process includes the actuator fatigue life. In this study, as-received and polished at dogbone SMA specimens underwent transformation induced fatigue testing at constant loading. The constant applied loading ranged from 100 MPa to 200 MPa. Specimens were thermally cycled through complete actuation (above Af to below Mf ) by Joule heating and environmental cooling. There were three cooling environments studied: liquid, gaseous nitrogen and vortex cooled air. It was shown that polished specimens had fatigue lives that were two to four times longer than those of as-received specimens. Test environment was also found to have an effect on fatigue life. Liquid cooling was observed to be corrosive, while the gaseous nitrogen and vortex air cooling were observed to be non-corrosive. The two non-corrosive cooling environments performed similarly with specimen fatigue lives that were twice that of specimens fatigue tested in the corrosive cooling environment. Transformation induced fatigue testing of polished specimens in a non-corrosive environment at 200 MPa had an average fatigue life of 14400 actuation cycles; at 150 MPa the average fatigue life was 20800 cycles and at 100 MPa it was 111000 cycles. For all specimens constant actuation from the beginning of testing until failure was observed, without the need for training. Finally, a microstructural study showed that the Ni3Ti precipitates in the material were one of the causes of crack initiation and propagation in the actuators.

Schick, Justin Ryan

2009-12-01T23:59:59.000Z

250

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network (OSTI)

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

251

Elimination of charge-enhancement effects in GaAs FETs with a low-temperature grown GaAs buffer layer  

Science Conference Proceedings (OSTI)

The use of low temperature grown GaAs (LT GaAs) buffer layer in GaAs FETs is shown via computer simulation and experimental measurement to reduce ion-induced charge collection by two to three orders of magnitude. This reduction in collected charge is associated with the efficient reduction of charge-enhancement mechanisms in the FETs. Error rate calculations indicate that the soft error rate of LT GaAs integrated circuits will be reduced by several orders of magnitude when compared to conventional FET-based GaAs ICs.

McMorrow, D.; Weatherford, T.R.; Curtice, W.R.; Knudson, A.R.; Buchner, S.; Melinger, J.S.; Tran, L.H.; Campbell, A.B. [Naval Research Lab., Washington, DC (United States)

1995-12-01T23:59:59.000Z

252

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes  

SciTech Connect

The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

2010-01-15T23:59:59.000Z

253

High Voltage GaN Schottky Rectifiers  

SciTech Connect

Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

1999-10-25T23:59:59.000Z

254

CC2, Two-Dimensional Electron Gas in In X Al 1-X N/Aln/GaN ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

255

Synthesis of Zr Doped NiO Layers on NiSi2 Linling Gu/Si-MCP Structures for Supercapacitors  

Science Conference Proceedings (OSTI)

Three-dimensional super capacitors consisting of NiSi2/silicon micro channel plates (MCPs) with Zr doped NiO layers have been fabricated. The silicon MCPs produced by electrochemical etching is utilized as a backbone of the 3D structure. Nickle layer ... Keywords: Zr doped NiO, Electrochemical properties, Silicon microchannel plate

Linling Gu; Tao Liu; Fei Wang; Shaohui Xu; Lianwei Wang; Paul K. Chu

2012-04-01T23:59:59.000Z

256

Phonon Knudsen flow in GaAs/AlAs superlattices  

DOE Green Energy (OSTI)

The measured in-plane thermal conductivity, {delta}{sub SL} of GaAs/AlAs superlattices with even moderate layer thicknesses are significantly smaller than the weighted average, {delta}{sub l} = 67 W/Km, of the bulk GaAs and AlAs conductivities. One expects a suppression of the thermal conductivity to that of an actual Al{sub 0.5}Ga{sub 0.5}As alloy when the thickness of the GaAs and AlAs layers approaches that of a single monolayer. However, the observed superlattice thermal conductivity remains suppressed even at layer thickness {approx_gt} 10 nm. The low thermal conductivities, and very high mobilities, make n-doped GaAs/AlAs superlattices attractive possibilities for thermoelectric devices. With Molecular-Beam-Epitaxial grown GaAs/AlAs superlattices one can expect the individual GaAs and AlAs layers to be extremely clean. Defect and/or alloy scattering is limited to be near the heterostructure interfaces. The authors estimate the room-temperature phonon mean-free-path to be 42 (22) nm for the longitudinal (transverse) mode and thus comparable to or smaller than the layer thicknesses. Thus they expect an important phonon scattering at the interfaces. They study this phonon scattering at the superlattice interfaces assuming a Knudsen flow characterized by diffusive scattering. The solid curve in the figure shows the Knudsen-flow theory estimated for the superlattice thermal conductivity which shows a significant reduction when the layer thickness is shorter than the estimated phonon mean free paths.

Hyldgaard, P.; Mahan, G.D. [Oak Ridge National Lab., TN (United States). Solid State Div.]|[Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy

1995-09-01T23:59:59.000Z

257

Strain relaxation in GaN/Al{sub x}Ga{sub 1-x}N superlattices grown by plasma-assisted molecular-beam epitaxy  

SciTech Connect

We have investigated the misfit relaxation process in GaN/Al{sub x}Ga{sub 1-x}N (x = 0.1, 0.3, 0.44) superlattices (SL) deposited by plasma-assisted molecular beam epitaxy. The SLs under consideration were designed to achieve intersubband absorption in the mid-infrared spectral range. We have considered the case of growth on GaN (tensile stress) and on AlGaN (compressive stress) buffer layers, both deposited on GaN-on-sapphire templates. Using GaN buffer layers, the SL remains almost pseudomorphic for x = 0.1, 0.3, with edge-type threading dislocation densities below 9 x 10{sup 8} cm{sup -2} to 2 x 10{sup 9} cm{sup -2}. Increasing the Al mole fraction to 0.44, we observe an enhancement of misfit relaxation resulting in dislocation densities above 10{sup 10} cm{sup -2}. In the case of growth on AlGaN, strain relaxation is systematically stronger, with the corresponding increase in the dislocation density. In addition to the average relaxation trend of the SL, in situ measurements indicate a periodic fluctuation of the in-plane lattice parameter, which is explained by the different elastic response of the GaN and AlGaN surfaces to the Ga excess at the growth front. The results are compared with GaN/AlN SLs designed for near-infrared intersubband absorption.

Kotsar, Y.; Bellet-Amalric, E.; Das, A.; Monroy, E. [CEA-Grenoble, INAC/SP2M/NPSC, 17 Rue des Martyrs, 38054 Grenoble cedex 9 (France); Doisneau, B. [SIMaP, Grenoble INP, Domaine Universitaire, BP 75, 38402 Saint Martin d'Heres (France); Sarigiannidou, E. [LMGP, Grenoble INP, 3 Parvis Louis Neel, BP 257, 38016 Grenoble cedex 1 (France)

2011-08-01T23:59:59.000Z

258

Testing of ethylene propylene seals for the GA-4/GA-9 casks  

SciTech Connect

The primary O-ring seal of the GA-4 and GA-9 casks was tested for leakage with a full-scale mockup of the cask lid and flange. Tests were performed at temperatures of ambient, {minus}41{degrees}, 121{degrees}, and 193{degrees}C. Shim plates between the lid and flange simulated gaps caused by thermal distortion. The testing used a helium mass spectrometer leak detector (MSLD). Results showed that the primary seal was leaktight for all test conditions. Helium permeation through the seal began in 13--23 minutes for the ambient tests and in 1--2 minutes for the tests at elevated temperatures. After each test several hours of the pumping were typically required to reduce the MSLD background reading to an acceptable level for the next test, indicating that the seal had become saturated with helium. To verify that the test results showed permeation and not real leakage, several response checks were conducted in which a calibrated leak source was inserted in the detector line near the seal. When the leak source was activated the detector responded within seconds.

Boonstra, R.H.

1993-08-01T23:59:59.000Z

259

Univerza v Ljubljani Fakulteta za matematiko in fiziko  

E-Print Network (OSTI)

Geometrical optics of a light bulb Avtor: Blaz Zabret Mentor: Prof. dr. Gorazd Planinsic Ljubljana, 25.10.2012 Abstract: If we submerge a light bulb in the water, an interesting phenomenon can be observed. The outside the light bulb is examined and also the reason why some apparently coted light bulbs do not show

Â?umer, Slobodan

260

Nanostructuring of silicon substrates for the site-controlled growth of GaAs/In0.15Ga0.85As/GaAs nanostructures  

Science Conference Proceedings (OSTI)

We report the optimization of electron beam lithography and inductively coupled plasma (ICP) dry etching processes to fabricate pre-patterned Si (100) substrates with sub-100nm holes with controlled size and shape. An efficient in situ cleaning sequence ... Keywords: Electron beam lithography, ICP dry etching, InGaAs quantum dots, MBE growth, Nanostructuring of silicon

Muhammad Usman; Tariq Alzoubi; Mohamed Benyoucef; Johann Peter Reithmaier

2012-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

NiO as a peculiar support for metal nanoparticles in polyols oxidation  

SciTech Connect

The peculiar influence of a NiO support was studied by preparing gold catalysts supported on NiO(1-x) TiO2(x) mixed oxides. PVA protected Au nanoparticles showed high activity when supported on NiO for the selective oxidation of glycerol and ethan-1,2-diol. A detailed characterization of the resulting Au catalysts revealed a preferential deposition of the metal nanoparticles on the NiO phase. However, the activity of Au on NiO(1-x)-TiO2(x) decreased with respect to pure NiO and the selectivity evolved with changes to the support.

Villa, Alberto [Universita di Milano, Italy; Veith, Gabriel M [ORNL; Ferri, Davide [EMPA, Laboratory for High Performance Ceramics, Duebendorf, Switzerland; Weidenkaff, Anke [EMPA, Laboratory for High Performance Ceramics, Duebendorf, Switzerland; Perry, Kelly A [ORNL; Campisi, Sebastiano [University of Milan and INFN, Milano, Italy; Prati, Laura [Universita di Milano, Italy

2013-01-01T23:59:59.000Z

262

Electric field engineering in GaN high electron mobility transistors  

E-Print Network (OSTI)

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

263

Light extraction in individual GaN nanowires on Si for LEDs  

E-Print Network (OSTI)

GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

Zhou, Xiang

264

High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy  

Science Conference Proceedings (OSTI)

We report the highest mobility values above 2000 cm{sup 2}/Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

Miyashita, Naoya; Ahsan, Nazmul; Monirul Islam, Muhammad; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 (Japan); Inagaki, Makoto [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Aichi (Japan); Yamaguchi, Masafumi [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Aichi (Japan)

2012-11-26T23:59:59.000Z

265

Black-body radiation shift of the Ga$^{+}$ clock transition  

E-Print Network (OSTI)

The blackbody radiation shift of the Ga$^+$ $4s^2 \\ ^1S^e_0 \\to 4s4p \\ ^3P^o_0$ clock transition is computed to be $-$$0.0140 \\pm 0.0048$ Hz at 300 K. The small shift is consistent with the blackbody shifts of the clock transitions of other group III ions which are of a similar size. The polarizabilities of the Ga$^+$ $4s^2 \\ ^1S^e_0$, $4s4p \\ ^3P^o_0$, and $4s4p \\ ^1P^o_1$ states were computed using the configuration interaction method with an underlying semi-empirical core potential. A byproduct of the analysis involved large scale calculations of the low lying spectrum and oscillator strengths of the Ga$^{2+}$ ion.

Cheng, Yongjun

2013-01-01T23:59:59.000Z

266

Diffusion bonding of commercially pure Ni using Cu interlayer  

Science Conference Proceedings (OSTI)

The concentration dependence of diffusivity in a multi-component diffusion system makes it complicated to predict the concentration profiles of diffusing species. This so called chemical diffusivity can be expressed as a function of thermodynamic and kinetic data. DICTRA software can calculate the concentration profiles using appropriate mobility and thermodynamic data. It can also optimize the diffusivity data using experimental diffusivity data. Then the optimized diffusivity data is stored as mobility data which is a linear function of temperature. In this work, diffusion bonding of commercially pure Ni using Cu interlayers is reported. The mobility parameters of Ni-Cu alloy binary systems were optimized using DICTRA/Thermocalc software from the available self-, tracer and chemical diffusion coefficients. The optimized mobility parameters were used to simulate concentration profiles of Ni-Cu diffusion joints using DICTRA/Thermocalc software. The calculated and experimental concentration profiles agreed well at 1100 Degree-Sign C. Agreement between the simulated and experimental profiles was less good at 1050 Degree-Sign C due to the grain boundary contribution to the overall diffusion. - Highlights: Black-Right-Pointing-Pointer The concentration profiles of Cu in Ni-Cu diffusion joints are modeled. Black-Right-Pointing-Pointer Interdiffusion coefficients in Ni-Cu system are optimized. Black-Right-Pointing-Pointer Optimized interdiffusion coefficients are expressed as mobility parameters. Black-Right-Pointing-Pointer Simulated profiles are comparable with experimental profiles.

Rahman, A.H.M.E., E-mail: a.rahman@my.und.edu; Cavalli, M.N.

2012-07-15T23:59:59.000Z

267

Mitigation of Sulfur Poisoning of Ni/Zirconia SOFC Anodes by Antimony and Tin  

Science Conference Proceedings (OSTI)

Surface Ni/Sb and Ni/Sb alloys were found to efficiently minimize the negative effects of sulfur on the performance of Ni/zirconia anode-supported solid oxide fuel cells (SOFC). Prior to operating on fuel gas containing low concentrations of H2S, the nickel/zirconia anodes were briefly exposed to antimony or tin vapor, which only slightly affected the SOFC performance. During the subsequent exposures to 1 and 5 ppm H2S, increases in anodic polarization losses were minimal compared to those observed for the standard nickel/zirconia anodes. Post-test XPS analyses showed that Sb and Sn tended to segregate to the surface of Ni particles, and further confirmed a significant reduction of adsorbed sulfur on the Ni surface in Ni/Sn and Ni/Sb samples compared to the Ni. The effect may be the result of weaker sulfur adsorption on bimetallic surfaces, adsorption site competition between sulfur and Sb or Sn on Ni, or other factors. The use of dilute binary alloys of Ni-Sb or Ni-Sn in the place of Ni, or brief exposure to Sb or Sn vapor, may be effective means to counteract the effects of sulfur poisoning in SOFC anodes and Ni catalysts. Other advantages, including suppression of coking or tailoring the anode composition for the internal reforming, are also expected.

Marina, Olga A.; Coyle, Christopher A.; Engelhard, Mark H.; Pederson, Larry R.

2011-02-28T23:59:59.000Z

268

Aug. 8-9, 2006 HAPL meeting, GA Open Discussion on Advanced Armor  

E-Print Network (OSTI)

Aug. 8-9, 2006 HAPL meeting, GA 1 Open Discussion on Advanced Armor Concepts Moderated by A. René in case the W armor does not work. #12;Aug. 8-9, 2006 HAPL meeting, GA 3 Roman Aquaduct at Pont du Gard, Provence #12;Aug. 8-9, 2006 HAPL meeting, GA 4 Possible Advanced Armor Options Include: · Engineered

Raffray, A. René

269

Current injection efficiency of InGaAsN quantum-well lasers Nelson Tansua  

E-Print Network (OSTI)

Current injection efficiency of InGaAsN quantum-well lasers Nelson Tansua Department of Electrical-threshold current injection efficiency of quantum well QW lasers is clarified. The analysis presented here is applied to the current injection efficiency of 1200 nm emitting InGaAs and 1300 nm emitting InGaAsN QW

Gilchrist, James F.

270

ANN-based GA for generating the sizing curve of stand-alone photovoltaic systems  

Science Conference Proceedings (OSTI)

Recent advances in artificial intelligence techniques have allowed the application of such technologies in real engineering problems. In this paper, an artificial neural network-based genetic algorithm (ANN-GA) model was developed for generating the ... Keywords: ANN, ANN-GA, GA, Prediction, Sizing curve, Stand-alone PV system

Adel Mellit

2010-05-01T23:59:59.000Z

271

Luminescence Enhancement in InGaN and ZnO by Water Vapor ...  

Science Conference Proceedings (OSTI)

Dependence of Ag/In Ratio of AgInS2 Crystals Grown by Hot-Press Method ... Analysis of Temperature Characteristics of InGaP/InGaAs/Ge Triple-Junction Solar Cell ... Luminescence Enhancement in InGaN and ZnO by Water Vapor Remote ...

272

Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a  

E-Print Network (OSTI)

is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

Okamoto, Koichi

273

TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron  

E-Print Network (OSTI)

neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

274

Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs  

E-Print Network (OSTI)

The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate ...

Piner, Edwin L.

275

Vertically aligned GaN nanotubes - Fabrication and current image analysis  

Science Conference Proceedings (OSTI)

In this work, we present a one step formation method of nanotubes on GaN film, and then map out local current of nanotubes. GaN nanotubes were formed by inductively coupled plasma (ICP) etching and found that tops of these nanotubes were hexagonal with ... Keywords: C-AFM, FESEM, GaN, ICP, Nanotubes

Shang-Chao Hung; Yan-Kuin Su; Shoou-Jinn Chang; Y. H. Chen

2006-11-01T23:59:59.000Z

276

Epitaxial EuO thin films on GaAs  

SciTech Connect

We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57 deg., a significant remanent magnetization, and a Curie temperature of 69 K.

Swartz, A. G.; Ciraldo, J.; Wong, J. J. I.; Li Yan; Han Wei; Lin Tao; Shi, J.; Kawakami, R. K. [Department of Physics and Astronomy, University of California, Riverside, California 92521 (United States); Mack, S.; Awschalom, D. D. [Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106 (United States)

2010-09-13T23:59:59.000Z

277

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

GENERAL ATOMICS GENERAL ATOMICS HOT CELL FACILITY DECONTAMINATION & DECOMMISSIONING PROJECT FINAL PROJECT CLOSEOUT REPORT prepared for GA HOT CELL D&D PROJECT CONTRACT NUMBERS DE-AC03-84SF11962 and DE-AC03-95SF20798 PBS VL-GA-0012 Approvals Prepared by: James Davis, III Date Project Manager, Oakland Environmental Programs Office Reviewed by: John Lee Date Deputy, Oakland Environmental Programs Office Approved by: Laurence McEwen Date Acting Director, Oakland Environmental Programs Office General Atomics Hot Cell Facility D&D Project Closeout Report Contents Page i CONTENTS CONTENTS.....................................................................................................................................

278

AlP/GaP distributed Bragg reflectors  

SciTech Connect

Distributed Bragg reflectors with high reflectivity bands centered at wavelengths from 530 to 690 nm (green to red) based on AlP/GaP quarter-wave stacks are prepared on (001)GaP using gas-source molecular-beam epitaxy. Additionally, the complex refractive index of AlP is measured using spectroscopic ellipsometry within the range of 330-850 nm in order to facilitate an accurate reflector design. Structures consisting of 15 quarter-wave stacks reach a peak reflectance between 95% and 98%, depending on the spectral position of the maximum.

Emberger, Valentin; Hatami, Fariba; Ted Masselink, W. [Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15, D-12489 Berlin (Germany); Peters, Sven [Sentech Instruments GmbH, Schwarzschildstr. 2, 12489 Berlin (Germany)

2013-07-15T23:59:59.000Z

279

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

280

Electron Hall Mobility in GaAsBi  

Science Conference Proceedings (OSTI)

We present measurements of the electron Hall mobility in n-type GaAs{sub 1-x}Bi{sub x} epilayers. We observed no significant degradation in the electron mobility with Bi incorporation in GaAs, up to a concentration of 1.2%. At higher Bi concentration ({ge} 1.6%) some degradation of the electron mobility was observed, although there is no apparent trend. Temperature dependent Hall measurements of the electron mobility suggest neutral impurity scattering to be the dominant scattering mechanism.

Kini, R. N.; Bhusal, L.; Ptak, A. J.; France, R.; Mascarenhas, A.

2009-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Analyzing the growth of In{sub x}Ga{sub 1-x}N/GaN superlattices in self-induced GaN nanowires by x-ray diffraction  

Science Conference Proceedings (OSTI)

Self-induced GaN nanowires are grown by plasma-assisted molecular beam epitaxy, with In{sub x}Ga{sub 1-x}N quantum wells inserted to form an axial superlattice. From the {omega}-2{theta} scans of a laboratory x-ray diffraction experiment, we obtain the superlattice period, the thickness of the quantum wells, and the In content in this layer. The axial growth rate of the In{sub x}Ga{sub 1-x}N quantum wells is significantly enhanced, which we attribute to increased Ga diffusion along the nanowire sidewalls in the presence of In.

Woelz, M.; Kaganer, V. M.; Brandt, O.; Geelhaar, L.; Riechert, H.

2011-06-27T23:59:59.000Z

282

Deep-Level Transient Spectroscopy in InGaAsN Lattice-Matched to GaAs: Preprint  

Science Conference Proceedings (OSTI)

This conference paper describes the deep-level transient spectroscopy (DLTS) measurements have been performed on the quaternary semiconductor InGaAsN. A series of as-grown, metal-organic chemical vapor deposited samples having varying composition were grown and measured. A GaAs sample was used as a baseline for comparison. After adding only In to GaAs, we did not detect significant additional defects; however, adding N and both N and In led to larger hole-trap peaks and additional electron-trap peaks in the DLTS data. The samples containing about 2% N, with and without about 6% In, had electron traps with activation energies of about 0.2 and 0.3 eV. A sample with 0.4% N had an electron trap with an activation energy of 0.37 eV.

Johnston, S. W.; Ahrenkiel, R. K.; Friedman, D. J.; Kurtz, S. R.

2002-05-01T23:59:59.000Z

283

Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets  

Science Conference Proceedings (OSTI)

Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

Chu, Kuei-Yi [National Cheng-Kung University, Institute of Microelectronics, Department of Electrical Engineering (China); Chiang, Meng-Hsueh, E-mail: mhchiang@niu.edu.tw; Cheng, Shiou-Ying, E-mail: sycheng@niu.edu.tw [National II an University, Department of Electronic Engineering (China); Liu, Wen-Chau [National Cheng-Kung University, Institute of Microelectronics, Department of Electrical Engineering (China)

2012-02-15T23:59:59.000Z

284

Superlubricity through graphene multilayers between Ni(111) surfaces  

E-Print Network (OSTI)

A single graphene layer placed between two parallel Ni(111) surfaces screens the strong attractive force and results in a significant reduction of adhesion and sliding friction. When two graphene layers are inserted, each graphene is attached to one of the metal surfaces with a significant binding and reduces the adhesion further. In the sliding motion of these surfaces the transition from stick-slip to continuous sliding is attained, whereby non-equilibrium phonon generation through sudden processes is suppressed. The adhesion and corrugation strength continues to decrease upon insertion of the third graphene layer and eventually saturates at a constant value with increasing number of graphene layers. In the absence of Ni surfaces, the corrugation strength of multilayered graphene is relatively higher and practically independent of the number of layers. Present first-principles calculations reveal the superlubricant feature of graphene layers placed between pseudomorphic Ni(111) surfaces, which is achieved t...

Cahangirov, S; Özçelik, V Ongun

2013-01-01T23:59:59.000Z

285

Monte Carlo Simulations of Segregation in Pt-Ni Catalyst Nanoparticles  

E-Print Network (OSTI)

of Segregation in Pt-Ni Catalyst Nanoparticles Guofengsurface chemistry of catalyst nanoparticles (also called "Pt-Ni alloy is an electro-catalyst of interest in the air

Wang, Guofeng; Van Hove, Michel A.; Ross, Philip N.; Baskes, M.I.

2004-01-01T23:59:59.000Z

286

CoNiFe Alloy Powder Synthesis by High Energy Milling  

Science Conference Proceedings (OSTI)

CoNiFe alloy powder was synthesized by high energy milling of mixtures of Co, Ni and Fe powder as a bulk processing method for producing powder. A milling ...

287

The Effect of Pellet Geometry on The Specific Activity of Ni-63.  

E-Print Network (OSTI)

?? 63Ni [Nickel-63] is routinely produced at HFIR with a specific activity of ~15 Ci/g [Curies/gram] by irradiating highly enriched stable 62Ni [Nickel-62] (86.31 %)… (more)

Walsh, Spenser Riley

2013-01-01T23:59:59.000Z

288

Thickness Effect of Al-Doped ZnO Window Layer on Damp-Heat Stability of CuInGaSe2 Solar Cells  

DOE Green Energy (OSTI)

We investigated the damp heat (DH) stability of CuInGaSe{sub 2} (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 {micro}m to a modest 0.50 {micro}m over an underlying 0.10-{micro}m intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 {micro}m/3 {micro}m) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85 C and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

2011-01-01T23:59:59.000Z

289

Thickness Effect of Al-Doped ZnO Window Layer on Damp Heat Stability of CuInGaSe2 Solar Cells: Preprint  

DOE Green Energy (OSTI)

We investigated the damp heat (DH) stability of CuInGaSe2 (CIGS) solar cells as a function of thickness of the Al-doped ZnO (AZO) window layer from the 'standard' 0.12 ?m to a modest 0.50 ?m over an underlying 0.10-?m intrinsic ZnO buffer layer. The CIGS cells were prepared with external electrical contact using fine Au wire to the tiny 'standard' Ni/Al (0.05 ?m/3 ?m) metal grid contact pads. Bare cell coupons and sample sets encapsulated in a specially designed, Al-frame test structure with an opening for moisture ingress control using a TPT backsheet were exposed to DH at 85oC and 85% relative humidity, and characterized by current-voltage (I-V), quantum efficiency (QE), and (electrochemical) impedance spectroscopy (ECIS). The results show that bare cells exhibited rapid degradation within 50-100 h, accompanied by film wrinkling and delamination and corrosion of Mo and AlNi grid, regardless of AZO thickness. In contrast, the encapsulated cells did not show film wrinkling, delamination, and Mo corrosion after 168 h DH exposure; but the trend of efficiency degradation rate showed a weak correlation to the AZO thickness.

Pern, F. J.; Mansfield, L.; DeHart, C.; Glick, S. H.; Yan, F.; Noufi, R.

2011-07-01T23:59:59.000Z

290

Effect of amorphous Mg{sub 50}Ni{sub 50} on hydriding and dehydriding behavior of Mg{sub 2}Ni alloy  

SciTech Connect

Composite Mg{sub 2}Ni (25 wt.%) amorphous Mg{sub 50}Ni{sub 50} was prepared by mechanical milling starting with nanocrystalline Mg{sub 2}Ni and amorphous Mg{sub 50}Ni{sub 50} powders, by using a SPEX 8000 D mill. The morphological and microstructural characterization of the powders was performed via scanning electron microscopy and X-ray diffraction. The hydriding characterization of the composite was performed via a solid gas reaction method in a Sievert's-type apparatus at 363 K under an initial hydrogen pressure of 2 MPa. The dehydriding behavior was studied by differential thermogravimetry. On the basis of the results, it is possible to conclude that amorphous Mg{sub 50}Ni{sub 50} improved the hydriding and dehydriding kinetics of Mg{sub 2}Ni alloy upon cycling. A tentative rationalization of experimental observations is proposed. - Research Highlights: {yields} First study of the hydriding behavior of composite Mg{sub 2}Ni (25 wt.%) amorphous Mg{sub 50}Ni{sub 50}. {yields} Microstructural characterization of composite material using XRD and SEM was obtained. {yields} An improved effect of Mg{sub 50}Ni{sub 50} on the Mg{sub 2}Ni hydriding behavior was verified. {yields} The apparent activation energy for the hydrogen desorption of composite was obtained.

Guzman, D., E-mail: danny.guzman@uda.cl [Departamento de Ingenieria en Metalurgia, Facultad de Ingenieria, Universidad de Atacama y Centro Regional de Investigacion y Desarrollo Sustentable de Atacama (CRIDESAT), Av. Copayapu 485, Copiapo (Chile); Ordonez, S. [Departamento de Ingenieria Metalurgica, Facultad de Ingenieria, Universidad de Santiago de Chile, Av. Lib. Bernardo O'Higgins 3363, Santiago (Chile); Fernandez, J.F.; Sanchez, C. [Departamento de Fisica de Materiales, Facultad de Ciencias, Universidad Autonoma de Madrid, Cantoblanco 28049, Madrid (Spain); Serafini, D. [Departamento de Fisica, Facultad de Ciencias, Universidad de Santiago de Chile and Center for Interdisciplinary Research in Materials, CIMAT, Av. Lib. Bernardo O'Higgins 3363, Santiago (Chile); Rojas, P.A. [Escuela de Ingenieria Mecanica, Facultad de Ingenieria, Av. Los Carrera 01567, Quilpue, Pontificia Universidad Catolica de Valparaiso, PUCV (Chile); Aguilar, C. [Departamento de Ingenieria Metalurgica y Materiales, Universidad Tecnica Federico Santa Maria, Av. Espana 1680, Valparaiso (Chile); Tapia, P. [Departamento de Ingenieria en Metalurgia, Facultad de Ingenieria, Universidad de Atacama, Av. Copayapu 485, Copiapo (Chile)

2011-04-15T23:59:59.000Z

291

Single-step Precipitation of Ni Nanoparticle Catalyst on Zeolite and ...  

Science Conference Proceedings (OSTI)

Abstract Scope, Ni nanoparticle catalyst was prepared on zeolite (pores size: 2 production rate from the methanol stream reforming reaction ...

292

An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992  

DOE Green Energy (OSTI)

This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The ``cycled`` organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al{sub 0.34}Ga{sub 0.66}As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

Venkatasubramanian, R. [Research Triangle Inst., Research Triangle Park, NC (United States)

1993-01-01T23:59:59.000Z

293

Ultra High p-doping Material Research for GaN Based Light Emitters  

Science Conference Proceedings (OSTI)

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

Vladimir Dmitriev

2007-06-30T23:59:59.000Z

294

Using GA-ANN algorithm to predicate coal bump energy  

Science Conference Proceedings (OSTI)

A GA-ANN network was constructed for preidcating coal bump energy, based on the 300 training samples form simulated results with PFC2D software for different coal particle stiffness. It was tested that the average relative error of fitted-output value ... Keywords: artificial neural network, coal bump, energy, genetic algorithm, predication

Yunliang Tan; Tongbin Zhao; Zhigang Zhao

2009-06-01T23:59:59.000Z

295

Properties of H, O and C in GaN  

DOE Green Energy (OSTI)

The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

Pearton, S.J.; Abernathy, C.R.; Lee, J.W. [Univ. of Florida, Gainesville, FL (United States)] [and others

1996-04-01T23:59:59.000Z

296

Optimization on Seawater Desulfurization Efficiency Based on LSSVM-GA  

Science Conference Proceedings (OSTI)

Seawater flue gas Desulfurization (SFGD) was adopted in many coal-fired power plants of littoral for its low cost and high desulfurization efficiency. Operating Parameters would seriously affect SFGD efficiency, the desulfurization efficiency can be ... Keywords: SFGD, desulfurization efficiency, LSSVM, GA, optimization

Liu Ding-ping; Li Xiao-wei

2010-10-01T23:59:59.000Z

297

Development of ZnO:Ga as an Ultrafast Scintillator  

DOE Green Energy (OSTI)

We report on several methods for synthesizing the ultra-fast scintillator ZnO(Ga), and measurements of the resulting products. This material has characteristics that make it an excellent alpha detector for tagging the time and direction of individual neutrons produced by t-d and d-d neutron generators (associated particle imaging). The intensity and decay time are strongly dependent on the method used for dopant incorporation. We compare samples made by diffusion of Ga metal to samples made by solid state reaction between ZnO and Ga2O3 followed by reduction in hydrogen. The latter is much more successful and has a pure, strong near-band-edge fluorescence and an ultra-fast decay time of the x-ray-excited luminescence. The luminescence increases dramatically as the temperature is reduced to 10K. We also present results of an alternate low-temperature synthesis that produces luminescent particles with a more uniform size distribution. We examine possible mechanisms for the bright near-band-edge scintillation and favor the explanation that it is due to the recombination of Ga3+ donor electrons with ionization holes trapped on H+ ion acceptors.

Bourret-Courchesne, E.D.; Derenzo, S.E.; Weber, M.J.

2008-12-10T23:59:59.000Z

298

Low cost high power GaSB photovoltaic cells  

Science Conference Proceedings (OSTI)

High power density and high capacity factor are important attributes of a thermophotovoltaics (TPV) system and GaSb cells are enabling for TPV systems. A TPV cogeneration unit at an off grid site will compliment solar arrays producing heat and electricity on cloudy days with the solar arrays generating electricity on sunny days. Herein

Lewis M. Fraas; Han X. Huang; Shi-Zhong Ye; She Hui; James Avery; Russell Ballantyne

1997-01-01T23:59:59.000Z

299

Low cost high power GaSb thermophotovoltaic cells  

Science Conference Proceedings (OSTI)

High power density and high capacity factor are important attributes of a TPV system and GaSb cells are enabling for TPV systems. A TPV cogeneration unit at an off grid site will compliment solar arrays producing heat and electricity on cloudy days with the solar arrays generating electricity on sunny days. Herein

Lewis M. Fraas; Han X. Huang; Shi-Zhong Ye; James Avery; Russell Ballantyne

1997-01-01T23:59:59.000Z

300

Oxygen Reduction Activity of PtxNi1-x Alloy Nanoparticles on Multiwall Carbon Nanotubes  

E-Print Network (OSTI)

PtxNi1 - x nanoparticles (Pt:Ni; 1:0, 4:1, 3:1 and 0.7:1) of ~5 nm, were synthesized on carboxylic acid-functionalized multiwall carbon nanotubes (PtxNi1 - x NPs/MWNT). The oxygen reduction reaction (ORR) activity measurements ...

Kim, Junhyung

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Improved thermal stability of Ni-silicides on Si: C epitaxial layers  

Science Conference Proceedings (OSTI)

The thermal stability of Ni-silicides on tensily strained in situ P doped Si:C epitaxial layers was evaluated. The baseline Ni silicidation process was shown to be compatible with Si:C Recessed Source-Drain (RSD) stressors for NMOS strain engineering ... Keywords: Epitaxy, Ni, SiC stressors, Silicide, Thermal stability

V. Machkaoutsan; S. Mertens; M. Bauer; A. Lauwers; K. Verheyden; K. Vanormelingen; P. Verheyen; R. Loo; M. Caymax; S. Jakschik; D. Theodore; P. Absil; S. G. Thomas; E. H. A. Granneman

2007-11-01T23:59:59.000Z

302

First principles study of Li diffusion in I-Li_{2}NiO_{2} structure  

E-Print Network (OSTI)

First principles computations have been used to study Li mobility in the orthorhombic Li2NiO2 structure with the Immm space group (I-Li2NiO2). Understanding Li mobility in I-Li2NiO2 structure other than the conventional ...

Ceder, Gerbrand

303

Preparation and Hydrogen storage properties of Mg-rich Mg-Ni ultrafine particles  

Science Conference Proceedings (OSTI)

In the present work, Mg-rich Mg-Ni ultrafine powders were prepared through an arc plasma method. The phase components, microstructure, and hydrogen storage properties of the powders were carefully investigated. It is found that Mg2Ni and MgNi2 ...

Jianxin Zou, Haiquan Sun, Xiaoqin Zeng, Gang Ji, Wenjiang Ding

2012-01-01T23:59:59.000Z

304

Stress evolution during Ni-Si compound formation for fully silicided (FUSI) gates  

Science Conference Proceedings (OSTI)

The stress (force) evolution during the formation of different Ni silicide phases was monitored by in situ curvature measurements, for the reaction of thin Ni films of various thicknesses with 100nm polycrystalline-Si deposited on oxidized (100) Si substrates. ... Keywords: In situ XRD, In situ curvature measurements, Ni-silicides

C. Torregiani; C. Van Bockstael; C. Detavernier; C. Lavoie; A. Lauwers; K. Maex; J. A. Kittl

2007-11-01T23:59:59.000Z

305

Microstructure and Corrosion Resistance of Pulse Electroplated Ni/nano-Al2O3 Composite Coatings  

Science Conference Proceedings (OSTI)

The Ni/nano-Al2O3 composite coatings were prepared by pulse electro-plating. The experiments of corrosion resistance were carried for 304 stainless steel, pure Ni coating and Ni/nano-Al2O3 composite coating in 3.5% NaCl and 10% HCl solutions. The microstrcuture ... Keywords: pulse electro-plating, composite coating, microhardness, corrosion resistance

Hu Bin-Liang, Tan Yuan-Qiang

2012-07-01T23:59:59.000Z

306

AlGaAsSb buffer/barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliability  

Science Conference Proceedings (OSTI)

Keywords: AlGaAsSb, Hall elements, InAs, Sb, buffer/barriers, deep quantum well, field effect transistors, reliability

S. Miya; S. Muramatsu; N. Kuze; K. Nagase; T. Iwabuchi; A. Ichii; M. Ozaki; I. Shibasaki

1996-03-01T23:59:59.000Z

307

Stress-induced martensitic transformations in NiTi and NiTi-TiC composites investigated by neutron diffraction  

SciTech Connect

Superelastic NiTi (51.0 at% Ni) with 0, 10 and 20 vol% TiC particles were deformed under uniaxial compression as neutron diffraction spectra were simultaneously obtained. The experiments yielded in-situ measurements of the thermoelastic stress-induced transformation. A detailed Rietveld determination is made of the phase fractions and the evolving strains in the reinforcing TiC particles and the austenite as it transforms to martensite on loading (and its subsequent back transformation on unloading). These strains are used to shed light on the phenomenon of load transfer in composites where the matrix undergoes a stress-induced phase transformation.

Vaidyanathan, R. [Massachusetts Inst. of Tech., Cambridge, MA (United States). Dept. of Materials Science and Engineering; Bourke, M.A.M. [Los Alamos National Lab., NM (United States); Dunand, D.C. [Northwestern Univ., Evanston, IL (United States)

1998-12-31T23:59:59.000Z

308

INVESTIGATION OF NOVEL ALLOY TiC-Ni-Ni3Al FOR SOLID OXIDE FUEL CELL INTERCONNECT APPLICATIONS  

DOE Green Energy (OSTI)

Solid oxide fuel cell interconnect materials must meet stringent requirements. Such interconnects must operate at temperatures approaching 800 C while resisting oxidation and reduction, which can occur from the anode and cathode materials and the operating environment. They also must retain their electrical conductivity under these conditions and possess compatible coefficients of thermal expansion as the anode and cathode. Results are presented in this report for fuel cell interconnect candidate materials currently under investigation based upon nano-size titanium carbide (TiC) powders. The TiC is liquid phase sintered with either nickel (Ni) or nickel-aluminide (Ni{sub 3}Al) in varying concentrations. The oxidation resistance of the submicron grain TiC-metal materials is presented as a function weight change versus time at 700 C and 800 C for varying content of metal/intermetallic in the system. Electrical conductivity at 800 C as a function of time is also presented for TiC-Ni to demonstrate the vitality of these materials for interconnect applications. TGA studies showed that the weight gain was 0.8 mg/cm{sup 2} for TiC(30)-Ni(30wt.%) after 100 hours in wet air at 800 C and the weight gain was calculated to be 0.5205 mg/cm{sup 2} for TiC(30)- Ni(10 wt.%) after 100 hours at 700 C and 100 hours at 800 C. At room temperature the electrical conductivity was measured to be 2444 1/[ohm.cm] for TiC-Ni compositions. The electrical conductivities at 800 C in air was recorded to be 19 1/[ohm.cm] after 125 hours. Two identical samples were supplied to PNNL (Dr. Jeff Stevenson) for ASR testing during the pre-decision period and currently they are being tested there. Fabrication, oxidation resistance and electrical conductivity studies indicate that TiC-Ni-Ni{sub 3}Al ternary appears to be a very important system for the development of interconnect composition for solid oxide fuel cells.

Rasit Koc; Geoffrey Swift; Hua Xie

2005-01-25T23:59:59.000Z

309

Characterization and device performance of (AgCu)(InGa)Se2 absorber layers  

DOE Green Energy (OSTI)

The study of (AgCu)(InGa)Se2 absorber layers is of interest in that Ag-chalcopyrites exhibit both wider bandgaps and lower melting points than their Cu counterparts. (AgCu)(InGa)Se2 absorber layers were deposited over the composition range 0 < Ag/(Ag+Cu) < 1 and 0.3 < Ga/(In+Ga) < 1.0 using a variety of elemental co-evaporation processes. Films were found to be singlephase over the entire composition range, in contrast to prior studies. Devices with Ga content 0.3 < Ga/(In+Ga) <0.5 tolerated Ag incorporation up to Ag/(Ag+Cu) = 0.5 without appreciable performance loss. Ag-containing films with Ga/(In+Ga) = 0.8 showed improved device characteristics over Cu-only control samples, in particular a 30-40% increase in short-circuit current. An absorber layer with composition Ag/(Ag+Cu) = 0.75 and Ga/(In+Ga) = 0.8 yielded a device with VOC = 890 mV, JSC = 20.5mA/cm2, fill factor = 71.3%, and ? = 13.0%.

Hanket, Gregory; Boyle, Jonathan H.; Shafarman, William N.

2009-06-08T23:59:59.000Z

310

Optical and quantum efficiency analysis of (Ag,Cu)(In,Ga)Se2 absorber layers  

DOE Green Energy (OSTI)

(Ag,Cu)(In,Ga)Se2 thin films have been deposited by elemental co-evaporation over a wide range of compositions and their optical properties characterized by transmission and reflection measurements and by relative shift analysis of quantum efficiency device measurements. The optical bandgaps were determined by performing linear fits of (?h?)2 vs. h?, and the quantum efficiency bandgaps were determined by relative shift analysis of device curves with fixed Ga/(In+Ga) composition, but varying Ag/(Cu+Ag) composition. The determined experimental optical bandgap ranges of the Ga/(In+Ga) = 0.31, 0.52, and 0.82 groups, with Ag/(Cu+Ag) ranging from 0 to 1, were 1.19-1.45 eV, 1.32-1.56 eV, and 1.52-1.76 eV, respectively. The optical bowing parameter of the different Ga/(In+Ga) groups was also determined.

Boyle, Jonathan; Hanket, Gregory; Shafarman, William

2009-06-09T23:59:59.000Z

311

Mechanical, Electrical, and Magnetic Properties of Ni Nanocontacts  

Science Conference Proceedings (OSTI)

The dynamic deformation upon stretching of Ni nanowires as those formed with mechanically controllable break junctions or with a scanning tunneling microscope is studied both experimentally and theoretically. Molecular dynamics simulations of the breaking ... Keywords: Ab initio, ab initio, conductance, nanocontacts, spintronics

M. R. Calvo; M. J. Caturla; D. Jacob; C. Untiedt; J. J. Palacios

2008-03-01T23:59:59.000Z

312

Molecular Dynamics Simulation of Reactions Forming Ni-Al ...  

Science Conference Proceedings (OSTI)

Abstract Scope, Alloying reactions of a Ni-coated Al nanoparticle, Al-coated ... Atomistic Modeling of Screw Dislocation Mobility in Alpha-Fe ... Mesoscale Polycrystal Calculations of Damage Histories in Shock Loaded Metals ... Multi- time Scale Modeling of the Annealing of Radiation-Induced Defects at Tilt Grain Boundaries.

313

Electron Phonon Superconductivity in LaNiPO  

Science Conference Proceedings (OSTI)

We report first principles calculations of the electronic structure, phonon dispersions and electron phonon coupling of LaNiPO. These calculations show that this material can be explained as a conventional electron phonon superconductor in contrast to theFeAs based high temperature superconductors.

Subedi, Alaska P [ORNL; Singh, David J [ORNL; Du, Mao-Hua [ORNL

2008-01-01T23:59:59.000Z

314

In situ oxidation of ultrathin silver films on Ni(111)  

Science Conference Proceedings (OSTI)

Oxidation of silver films of one- and two-monolayer thicknesses on the Ni(111) surface was investigated by low-energy electron microscopy at temperatures of 500 and 600 K. Additionally, intensity--voltage curves were measured in situ during oxidation ...

A. Meyer; J. I. Flege; S. D. Senanayake; B. Kaemena; R. E. Rettew; F. M. Alamgir; J. Falta

2011-07-01T23:59:59.000Z

315

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

316

Continuous spin reorientation transition in epitaxially grown antiferromagnetic NiO thin films  

SciTech Connect

Fe/NiO/MgO/Ag(001) films were grown epitaxially, and the Fe and NiO spin orientations were determined using x-ray magnetic dichroism. We find that the NiO spins are aligned perpendicularly to the in-plane Fe spins. Analyzing both the in-plane and out-of-plane spin components of the NiO layer, we demonstrate unambiguously that the antiferromagnetic NiO spins undergo a continuous spin reorientation transition from the in-plane to out-of-plane directions with increasing of the MgO thickness.

Li, J.; Arenholz, E.; Meng, Y.; Tan, A.; Park, J.; Jin, E.; Son, H.; Wu, J.; Jenkins, C. A.; Scholl, A.; Hwang, Chanyong; Qiu, Z. Q.

2011-03-01T23:59:59.000Z

317

Effect of Aging Heat Treatments on Ni52Ti48 Shape Memory Alloy  

E-Print Network (OSTI)

Ni-rich NiTi shape memory alloys (SMAs) are capable of attaining a wide range of transformation temperatures depending on the heat treatment conditions and superior thermo-mechanical cycling stability, which are desired for repeated solid-state actuation. High Ni-content Ni-rich SMAs have very low transformation temperatures in a solutionized condition due to the high Ni-content of the matrix. Slow cooling (furnacecooling) from solutionizing temperature and additional aging heat treatments result in the formation of Ni-rich precipitates such as Ni4Ti3, Ni3Ti2 and Ni3Ti and increase transformation temperatures above ambient by depleting excess Ni from the matrix. However, the precipitates do not undergo a martensitic phase transformation and they decrease the transformation strain by reducing the volume fraction of the material capable of transforming. Meanwhile, recent preliminary work shows that Ni3Ti precipitates dominate fatigue failure. The objectives of the present study are: (1) to eliminate Ni3Ti but still have Ni4Ti3 precipitates, which are responsible for the dimensional stability and increase transformation temperatures, (2) to investigate the effect of heat treatments on the transformation strain, and (3) to select single variant Ni4Ti3 precipitates through constrained aging for the formation of oriented internal stress and eventually obtain twoway shame memory effect (TWSME) and enhanced dimensional stability. Based on these objectives, the effect of aging heat treatment on transformation temperatures, microstructural evolution, and shape memory behavior were investigated for a Ni52Ti48 shape memory alloy (SMA) by using differential scanning calorimetry (DSC), optical microscopy, scanning electron microscopy (SEM), and thermo-mechanical testing, including isobaric heating-cooling experiments under various stress levels. It was observed that solutionizing at 900 degree C for 24 hours eliminated Ni3Ti type precipitates, but additional aging heat treatments are needed to form Ni4Ti3 precipitates to increase transformation temperatures. Furnace-cooling and additional aging heat treatment results in the multi-stage martensitic transformation due to chemical and stress inhomogeneities in the microstructure. Aging of the controlled furnace-cooled material at 400 degree C for 48 hours resulted in the highest transformation temperatures among all processing conditions investigated due to the combination of Ni3Ti precipitates and 27 percent volume fraction of the Ni4Ti3 precipitates, which led to the depletion of Ni from the transforming matrix. However, since overaging results in losing coherency of the precipitates, dimensional stability during isobaric thermal cycling was negatively impacted.

Akin, Erhan

2010-08-01T23:59:59.000Z

318

Electroluminescence and Transmission Electron Microscopy Characterization of Reverse-Biased AlGaN/GaN Devices  

Science Conference Proceedings (OSTI)

Reverse-bias stress testing has been applied to a large set of more than 50 AlGaN/GaN high electron mobility transistors, which were fabricated using the same process but with different values of the AlN mole fraction and the AlGaN barrier-layer thickness, as well as different substrates (SiC and sapphire). Two sets of devices having different defect types and densities, related to the different growth conditions and the choice of nucleation layer, were also compared. When subjected to gate drain (or gate-to-drain and source short-circuited) reverse-bias testing, all devices presented the same time-dependent failure mode, consisting of a significant increase in the gate leakage current. This failure mechanism occurred abruptly during step-stress experiments when a certain negative gate voltage, or critical voltage, was exceeded or, during constant voltage tests, at a certain time, defined as time to breakdown. Electroluminescence (EL) microscopy was systematically used to identify localized damaged areas that induced an increase of gate reverse current. This current increase was correlated with the increase of EL intensity, and significant EL emission during tests occurred only when the critical voltage was exceeded. Focused-ion-beam milling produced cross-sectional samples suitable for electron microscopy observation at the sites of failure points previously identified by EL microscopy. In highdefectivity devices, V-defects were identified that were associated with initially high gate leakage current and corresponding to EL spots already present in untreated devices. Conversely, identification of defects induced by reverse-bias testing proved to be extremely difficult, and only nanometer-size cracks or defect chains, extending vertically from the gate edges through the AlGaN/GaN heterojunction, were found. No signs of metal/semiconductor interdiffusion or extended defective areas were visible.

Cullen, David A [ORNL; Smith, David J [Arizona State University; Passaseo, Adriana [Consiglio Nazionale delle Ricerche; Tasco, Vittorianna [Consiglio Nazionale delle Ricerche; Stocco, Antonio [Universita di Padova; Meneghini, Matteo [Universita di Padova; Meneghesso, Gaudenzio [Universita di Padova; Zanoni, Enrico [Universita di Padova

2013-01-01T23:59:59.000Z

319

First-principles investigations of Ni3Al(111) and NiAl(110) surfaces at metal dusting conditions  

SciTech Connect

We investigate the structure and surface composition of the {gamma}{prime}-Ni{sub 3}Al(111) and {beta}-NiAl(110) alloy surfaces at conditions relevant for metal dusting corrosion related to catalytic steam reforming of natural gas. In regular service as protective coatings, nickel-aluminum alloys are protected by an oxide scale, but in case of oxide scale spallation, the alloy surface may be directly exposed to the reactive gas environment and vulnerable to metal dusting. By means of density functional theory and thermochemical calculations for both the Ni{sub 3}Al and NiAl surfaces, the conditions under which CO and OH adsorption is to be expected and under which it is inhibited, are mapped out. Because CO and OH are regarded as precursors for nucleating graphite or oxide on the surfaces, phase diagrams for the surfaces provide a simple description of their stability. Specifically, this study shows how the CO and OH coverages depend on the steam to carbon ratio (S/C) in the gas and thereby provide a ranking of the carbon limits on the different surface phases.

Saadi, Souheil

2011-03-01T23:59:59.000Z

320

Calculation of thermodynamic, electronic, and optical properties of monoclinic Mg2NiH4  

DOE Green Energy (OSTI)

Ab initio total-energy density functional theory is used to investigate the low temperature (LT) monoclinic form of Mg2NiH4. The calculated minimum energy geometry of LT Mg2NiH4 is close to that determined from neutron diffraction data, and the NiH4 complex is close to a regular tetrahedron. The enthalpies of the phase change to high temperature (HT) pseudo-cubic Mg2NiH4 and of hydrogen absorption by Mg2Ni are calculated and compared with experimental values. LT Mg2NiH4 is found to be a semiconductor with an indirect band gap of 1.4 eV. The optical dielectric function of LT Mg2NiH4 differs somewhat from that of the HT phase. A calculated thin film transmittance spectrum is consistent with an experimental spectrum.

Myers, W.R.; Richardson, T.J.; Rubin, M.D.; Wang, L-W.

2001-10-01T23:59:59.000Z

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321

Post-spinel transformations and equation of state in ZnGa[subscript 2]O[subscript 4]: Determination at high pressure by in situ x-ray diffraction  

Science Conference Proceedings (OSTI)

Room-temperature angle-dispersive x-ray diffraction measurements on spinel ZnGa{sub 2}O{sub 4} up to 56 GPa show evidence of two structural phase transformations. At 31.2 GPa, ZnGa{sub 2}O{sub 4} undergoes a transition from the cubic spinel structure to a tetragonal spinel structure similar to that of ZnMn{sub 2}O{sub 4}. At 55 GPa, a second transition to the orthorhombic marokite structure (CaMn{sub 2}O{sub 4}-type) takes place. The equation of state of cubic spinel ZnGa{sub 2}O{sub 4} is determined: V{sub 0} = 580.1(9) {angstrom}{sup 3}, B{sub 0} = 233(8) GPa, B'{sub 0} = 8.3(4), and B''{sub 0} = -0.1145 GPa{sup -1} (implied value); showing that ZnGa{sub 2}O{sub 4} is one of the less compressible spinels studied to date. For the tetragonal structure an equation of state is also determined: V{sub 0} = 287.8(9) {angstrom}{sup 3}, B{sub 0} = 257(11) GPa, B'{sub 0} = 7.5(6), and B''{sub 0} = -0.0764 GPa{sup -1} (implied value). The reported structural sequence coincides with that found in NiMn{sub 2}O{sub 4} and MgMn{sub 2}O{sub 4}.

Errandonea, D.; Kumar, Ravhi S.; Manjón, F.J.; Ursaki, V.V.; Rusu, E.V.; (UNLV); (Acad.Sci.-Moldova); (Valencia)

2009-01-15T23:59:59.000Z

322

GaSb substrates with extended IR wavelength for advanced space based applications  

SciTech Connect

GaSb substrates have advantages that make them attractive for implementation of a wide range of infrared (IR) detectors with higher operating temperatures for stealth and space based applications. A significant aspect that would enable widespread commercial application of GaSb wafers for very long wavelength IR (VLWIR) applications is the capability for transmissivity beyond 15 m. Due largely to the GaSb (antisite) defect and other point defects in undoped GaSb substrates, intrinsic GaSb is still slightly p-type and strongly absorbs in the VLWIR. This requires backside thinning of the GaSb substrate for IR transmissivity. An extremely low n-type GaSb substrate is preferred to eliminate thinning and provide a substrate solution for backside illuminated VLWIR devices. By providing a more homogeneous radial distribution of the melt solute to suppress GaSb formation and controlling the cooling rate, ultra low doped n:GaSb has been achieved. This study examines the surface properties and IR transmission spectra of ultra low doped GaSb substrates at both room and low temperatures. Atomic force microscopy (AFM), homoepitaxy by MBE, and infrared Fourier transform (FTIR) analysis was implemented to examine material quality. As compared with standard low doped GaSb, the ultra low doped substrates show over 50% transmission and consistent wavelength transparency past 23 m with improved %T at low temperature. Homoepitaxy and AFM results indicate the ultra low doped GaSb has a low thermal desorbtion character and qualified morphology. In summary, improvements in room temperature IR transmission and extended wavelength characteristics have been shown consistently for ultra low doped n:GaSb substrates.

Allen, Lisa P.; Flint, Patrick; Dallas, Gordon; Bakken, Daniel; Blanchat, Kevin; Brown, Gail J.; Vangala, Shivashankar R.; Goodhue, William D.; Krishnaswami, Kannan

2009-05-01T23:59:59.000Z

323

Two-color picosecond experiments on anti-Stokes photoluminescence in GaAs/AlGaAs asymmetric double quantum wells  

E-Print Network (OSTI)

quantum wells S. C. Hohng and D. S. Kima) Department of Physics and Condensed Matter Research Institute in GaAs/AlGaAs asymmetric double quantum wells. Direct evidence for forbidden absorption is shown heterojunctions and asymmetric double quan- tum wells was found and its origin is still being hotly de- bated

Hohng, Sung Chul

324

Light output enhancement of InGaN/GaN light-emitting diodes with contrasting indium tin-oxide nanopatterned structures  

Science Conference Proceedings (OSTI)

Various nanopatterns on the transparent conducting indium tin oxide (ITO) layer are investigated to enhance the light extraction efficiency of the InGaN/GaN light-emitting diodes (LEDs). Triangular, square, and circular nanohole patterns with the square ...

Sang Hyun Jung, Keun Man Song, Young Su Choi, Hyeong-Ho Park, Hyun-Beom Shin, Ho Kwan Kang, Jaejin Lee

2013-01-01T23:59:59.000Z

325

Optically pumped InxGa?â??xN/InyGa?â??yN multiple quantum well vertical cavity surface emitting laser operating at room temperature.  

E-Print Network (OSTI)

Room temperature vertical cavity lasing at the wavelength of 433nm has been successfully realized in InxGa?â??xN/InyGa?â??yN multiple quantum well without Bragg mirrors under photo-excitation. At high excitation intensity, ...

Chen, Zhen

326

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth  

Science Conference Proceedings (OSTI)

Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f{sub t} and f{sub max} in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 OMEGA mum to a GaN 2DEG.

Dasgupta, Sansaptak; Nidhi,; Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K. [Department of ECE, University of California, Santa Barbara, California 93106 (United States) and Department of Materials, University of California, Santa Barbara, California 93106 (United States)

2010-04-05T23:59:59.000Z

327

GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

A GaN based depletion mode metal oxide semiconductor field effect transistor (MOSFET) was demonstrated using Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as the gate dielectric. The MOS gate reverse breakdown voltage was > 35V which was significantly improved from 17V of Pt Schottky gate on the same material. A maximum extrinsic transconductance of 15 mS/mm was obtained at V{sub ds} = 30 V and device performance was limited by the contact resistance. A unity current gain cut-off frequency, f{sub {tau}}, and maximum frequency of oscillation, f{sub max} of 3.1 and 10.3 GHz, respectively, were measured at V{sub ds} = 25 V and V{sub gs} = {minus}20 V.

Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Schurman, M.J.

1999-03-02T23:59:59.000Z

328

Dynamic Model of Hydrogen in GaN  

NLE Websites -- All DOE Office Websites (Extended Search)

Dynamic Model of Hydrogen in GaN by S. M. Myers and A. F. Wright Motivation-Hydrogen is incorporated into p-type GaN during MOCVD growth, producing highly stable passivation of the Mg acceptors. Complete acceptor activation by thermal H release requires temperatures that threaten material integrity, prompting compromises in device processing. At lower temperatures, forward bias of p-n junctions or electron-beam irradiation produces a metastable, reversible activation without H release. To understand and control such effects, we are developing a mathematical model of H behavior wherein state energies from density-functional theory are employed in diffusion-reaction equations. Previously, we used the greatly simplifying assumptions of local equilibrium among states

329

A GaAs transceiver chip for optical data transmission  

SciTech Connect

The present article describes a transceiver VLSI chip for optical data transmission, at 1 Gbit/s (1.4 Gbit/s in selected production), made in GaAs technology. The transceiver makes the parallel-to-serial and serial-to-parallel conversion as well as the encoding and decoding of 32 bit data words. The circuit operates in a completely asynchronous mode, allowing the possibility of switching on-off the transmission in few nsec and of using the transceiver not only in point-to-point topologies, but also in flooding topologies (i.e. star connections). The radiation hardness and the relatively low power consumption, respect to TTL, of the GaAs, extend the use of the chip to a large number of applications in present and future high energy physics experimental apparatus.

Mirabelli, G.; Petrolo, E.; Valente, E. (Ist. Nazionale di Fisica Nucleare, Roma (Italy)); Cardarelli, R.; Santonico, R. (Sezione di Roma 2 and Univ. di Roma (Italy). Ist. Nazionale di Fisica Nucleare); Ferrer, M.L. (Lab. Nazionali di Frascati (Italy). Ist. Nazionale di Fisica Nucleare)

1993-08-01T23:59:59.000Z

330

Method of plasma etching Ga-based compound semiconductors  

SciTech Connect

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

Qiu, Weibin; Goddard, Lynford L.

2012-12-25T23:59:59.000Z

331

AlGaAs diode pumped tunable chromium lasers  

DOE Patents (OSTI)

An all-solid-state laser system is disclosed wherein the laser is pumped in the longwave wing of the pump absorption band. By utilizing a laser material that will accept unusually high dopant concentrations without deleterious effects on the crystal lattice one is able to compensate for the decreased cross section in the wing of the absorption band, and the number of pump sources which can be used with such a material increases correspondingly. In a particular embodiment a chromium doped colquiriite-structure crystal such as Cr:LiSrAlF.sub.6 is the laser material. The invention avoids the problems associated with using AlGaInP diodes by doping the Cr:LiSrAlF.sub.6 heavily to enable efficient pumping in the longwave wing of the absorption band with more practical AlGaAs diodes.

Krupke, William F. (Pleasanton, CA); Payne, Stephen A. (Castro Valley, CA)

1992-01-01T23:59:59.000Z

332

CsBr/GaN Heterojunction Photoelectron Source  

Science Conference Proceedings (OSTI)

Experimental results on a new CsBr/GaN heterojunction photocathode structure are presented. The results indicate a fourfold improvement in photoyield relative to CsBr/Cr photocathodes. A model is presented based on intraband states in CsBr and electron injection from the GaN (with 1% addition of indium) substrate to explain the observed photoyield enhancement. The photocathode lifetime at high current density (>40 A/cm{sup 2}) is limited by laser heating of the small illuminated area. Calculations are presented for sapphire and diamond substrates, indicating a factor of 20 reduction in temperature for the latter. The results are encouraging for the realization of a high photoyield photocathode operating at high current density with long lifetime.

Maldonado, J.R.; /Stanford U., Elect. Eng. Dept.; Liu, Z.; Sun, Y.; /SLAC, SSRL; Schuetter, S.; /Wisconsin U., Madison; Pianetta, P.; /SLAC, SSRL; Pease, R.F.W.; /Stanford U., Elect. Eng. Dept.

2009-04-30T23:59:59.000Z

333

Method of plasma etching GA-based compound semiconductors  

DOE Patents (OSTI)

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

Qiu, Weibin; Goddard, Lynford L.

2013-01-01T23:59:59.000Z

334

Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers.  

SciTech Connect

GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the art HEMT transistors and amplifiers.

Kurtz, Steven Ross; Follstaedt, David Martin; Wright, Alan Francis; Baca, Albert G.; Briggs, Ronald D.; Provencio, Paula Polyak; Missert, Nancy A.; Allerman, Andrew Alan; Marsh, Phil F.; Koleske, Daniel David; Lee, Stephen Roger; Shul, Randy John; Seager, Carleton Hoover; Tigges, Christopher P.

2005-12-01T23:59:59.000Z

335

X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure  

SciTech Connect

High-resolution X-ray diffraction analysis and scanning confocal Raman spectroscopy are used to study the spatial distribution of strains in the In{sub x}Ga{sub 1-x}N/GaN layers and structural quality of these layers in a multilayered light-emitting diode structure produced by metal-organic chemical vapor deposition onto (0001)-oriented sapphire substrates. It is shown that elastic strains almost completely relax at the heterointerface between the thick GaN buffer layer and In{sub x}Ga{sub 1-x}N/GaN buffer superlattice. It is established that the GaN layers in the superlattice are in a stretched state, whereas the alloy layers are in a compressed state. In magnitude, the stretching strains in the GaN layers are lower than the compressive strains in the InGaN layers. It is shown that, as compared to the buffer layers, the layers of the superlattice contain a smaller number of dislocations and the distribution of dislocations is more randomly disordered. In micro-Raman studies on scanning through the thickness of the multilayered structure, direct evidence is obtained for the asymmetric gradient distributions of strains and crystal imperfections of the epitaxial nitride layers along the direction of growth. It is shown that the emission intensity of the In{sub x}Ga{sub 1-x}N quantum well is considerably (more than 30 times) higher than the emission intensity of the GaN barrier layers, suggesting the high efficiency of trapping of charge carriers by the quantum well.

Strelchuk, V. V., E-mail: Strelch@isp.kiev.ua; Kladko, V. P.; Avramenko, E. A.; Kolomys, O. F.; Safryuk, N. V.; Konakova, R. V. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine); Yavich, B. S., E-mail: byavich@soptel.ru [ZAO Svetlana-Optoelectronics (Russian Federation); Valakh, M. Ya.; Machulin, V. F.; Belyaev, A. E. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)

2010-09-15T23:59:59.000Z

336

UV-Photoassisted Etching of GaN in KOH  

SciTech Connect

The etch rate of GaN under W-assisted photoelectrochemical conditions in KOH solutions is found to be a strong function of illumination intensity, solution molarity, sample bias and material doping level. At low e-h pair generation rates, grain boundaries are selectively etched, while at higher illumination intensities etch rates for unintentionally doped (n - 3x 10^12Gcm-3) GaN are 2 1000 .min-l. The etching is diffusion limited under our conditions with an activation energy of - 0.8kCal.mol-1. The etched surfaces are rough, but retain their stoichiometry. PEC etching is found to selectively reveal grain boundaries in GaN under low light illumination conditions. At high lamp powers the rates increase with sample temperature and the application of bias to the PEC cell, while they go through a maximum with KOH solution molarity. The etching is diffusion-limited, producing rough surface morphologies that are suitable in a limited number of device fabrication steps. The surfaces however appear to remain relatively close to their stoichiometric composition.

Abernathy, C.R.; Auh, K.H.; Cho, H.; Donovan, S.M.; Han, J.; Lambers, E.S.; Pearton, S.J.; Ren F.; Shul, R.J.

1998-11-12T23:59:59.000Z

337

Comparative study of GaN growth process by MOVPE  

SciTech Connect

A comparative study of two different MOVPE reactors used for GaN growth is presented. Computational fluid dynamics (CFD) was used to determine common gas phase and fluid flow behaviors within these reactors. This paper focuses on the common thermal fluid features of these two MOVPE reactors with different geometries and operating pressures that can grow device-quality GaN-based materials. The study clearly shows that several growth conditions must be achieved in order to grow high quality GaN materials. The high-temperature gas flow zone must be limited to a very thin flow sheet above the susceptor, while the bulk gas phase temperature must be very low to prevent extensive pre-deposition reactions. These conditions lead to higher growth rates and improved material quality. A certain range of gas flow velocity inside the high-temperature gas flow zone is also required in order to minimize the residence time and improve the growth uniformity. These conditions can be achieved by the use of either a novel reactor structure such as a two-flow approach or by specific flow conditions. The quantitative ranges of flow velocities, gas phase temperature, and residence time required in these reactors to achieve high quality material and uniform growth are given.

Sun, J.; Redwing, J.M.; Kuech, T.F.

1999-07-01T23:59:59.000Z

338

Low-temperature magnetization of (Ga,Mn) As semiconductors  

E-Print Network (OSTI)

We report on a comprehensive study of the ferromagnetic moment per Mn atom in (Ga,Mn)As ferromagnetic semiconductors. Theoretical discussion is based on microscopic calculations and on an effective model of Mn local moments antiferromagnetically coupled to valence band hole spins. The validity of the effective model over the range of doping studied is assessed by comparing with microscopic tight-binding/coherent-potential approximation calculations. Using the virtual crystal k center dot p model for hole states, we evaluate the zero-temperature mean-field contributions to the magnetization from the hole kinetic and exchange energies, and magnetization suppression due to quantum fluctuations of Mn moment orientations around their mean-field ground state values. Experimental low-temperature ferromagnetic moments per Mn are obtained by superconducting quantum interference device and x-ray magnetic circular dichroism measurements in a series of (Ga,Mn)As semiconductors with nominal Mn doping ranging from similar to 2 to 8%. Hall measurements in as-grown and annealed samples are used to estimate the number of uncompensated substitutional Mn moments. Based on our comparison between experiment and theory we conclude that all these Mn moments in high quality (Ga,Mn)As materials have nearly parallel ground state alignment.

Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL.

2006-01-01T23:59:59.000Z

339

Substrate misorientation effects on epitaxial GaInAsSb  

DOE Green Energy (OSTI)

The effect of substrate misorientation on the growth of GaInAsSb was studied for epilayers grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy. The substrates were (100) misoriented 2 or 6{degree} toward (110), (111)A, or (111)B. The surface is mirror-like and featureless for layers grown with a 6{degree} toward (111)B misorientation, while, a slight texture was observed for layers grown on all other misorientations. The optical quality of layers, as determined by the full width at half-maximum of photoluminescence spectra measured at 4K, is significantly better for layers grown on substrates with a 6{degree} toward (111)B misorientation. The incorporation of Zn as a p-type dopant in GaInAsSb is about 1.5 times more efficient on substrates with 6{degree} toward (111)B misorientation compared to 2{degree} toward (110) misorientation. The external quantum efficiency of thermophotovoltaic devices is not, however, significantly affected by substrate misorientation.

Wang, C.A.; Choi, H.K.; Oakley, D.C. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1997-12-01T23:59:59.000Z

340

Desferal (DFO) induced Ga-67 washout from normal tissue, tumor and abscess in experimental animals  

Science Conference Proceedings (OSTI)

In the experimental animal, desferal (DFO) given intravenously washes out Ga-67 from all tissues. This effect is not uniform: blood activity is reduced very markedly, while liver activity is less affected. Maximal effect of DFO occurs if given close to the Ga-67 injection. When the time interval between the two is increased, the absolute amount of Ga-67 excreted in the urine in excess of the spontaneous excretion is reduced. Administration of DFO does not effect Ga-67 gastrointestinal excretion. In three animal tumor models (EMT-6 sarcoma in Balb/c mice, spontaneous adenocarcinoma in mice, and spontaneous adenocarcinoma in the rabbit) and in sterile abscess-bearing rats, the administration of DFO 24 hrs after Ga-67-citrate improves significantly the target-to-nontarget ratio. Animals given 50 mg/kg DFO I.V. after Ga-67 citrate showed a significant reduction in the whole-body activity as seen in a one-week follow up.

Oster, Z.H.; Som, P.; Atkins, H.L.; Brill, A.B.

1980-01-01T23:59:59.000Z

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341

Low energy electron beam induced vacancy activation in GaN  

Science Conference Proceedings (OSTI)

Experimental evidence on low energy electron beam induced point defect activation in GaN grown by metal-organic vapor phase epitaxy (MOVPE) is presented. The GaN samples are irradiated with a 5-20 keV electron beam of a scanning electron microscope and investigated by photoluminescence and positron annihilation spectroscopy measurements. The degradation of the band-to-band luminescence of the irradiated GaN films is associated with the activation of point defects. The activated defects were identified as in-grown Ga-vacancies. We propose that MOVPE-GaN contains a significant concentration of passive V{sub Ga}-H{sub n} complexes that can be activated by H removal during low energy electron irradiation.

Nykaenen, H.; Suihkonen, S.; Sopanen, M. [Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto (Finland); Kilanski, L. [Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto (Finland); Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/56, 02-668 Warsaw (Poland); Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto (Finland)

2012-03-19T23:59:59.000Z

342

Low-cost, high-efficiency solar cells utilizing GaAs-on-Si technology  

DOE Green Energy (OSTI)

This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, [approximately] 1 [times] 10[sup 5] cm[sup [minus]5], as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 [times]10[sup 7] cm[sup [minus]2]. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells.

Vernon, S.M. (Spire Corp., Bedford, MA (United States))

1993-04-01T23:59:59.000Z

343

Auxiliary Ligand-Dependent Assembly of Several Ni/Ni-Cd Compounds with N2O2 Donor Tetradentate Symmetrical Schiff Base Ligand  

DOE Green Energy (OSTI)

Several low-dimensional Ni/Ni-Cd complexes containing N2O2 donor tetradentate symmetrical Schiff base ligand bis(acetylacetone)ethylene-diamine (sy-H2L2), namely, [Ni(sy-L2)]2?HLa?ClO4 (2), (HLa)2?(ClO4)?(NO3) (3), [Ni(sy-L2)X]2](4,4’-bipy) (where La = 5,7-dimethyl-3,6-dihydro-2H-1,4-diazepine, X = ClO4 (4), X=NO3 (5), [Ni(sy-L2)Cd(SCN)2]n (6) and [Ni(sy-L2)?Cd(N3)2]n (7) have been synthesized from [Ni(sy-L2)]2?H2O (1). Complex 2, is three component discrete assembly generated from (HLa)+ moiety bridged with [Ni(sy-L2)] unit and ClO4- anion. A solution containing complex 2 and Cd(NO3)2 results in a mixture of 1 and 3. Further re-crystallization of 1 and 3 with various auxiliary ligands, provides coordination complexes 4 – 7 stabilized by weak hydrogen bonds in which 6 and 7 represent the first 1D heteronuclear complexes based on symmetric acacen-base Schiff base ligand.

Ge, Ying Ying; Li, Guo-Bi; Fang, Hua-Cai; Zhan, Xu Lin; Gu, Zhi-Gang; Chen, Jin Hao; Sun, Feng; Cai, Yue-Peng; Thallapally, Praveen K.

2010-09-18T23:59:59.000Z

344

Environmentally Assisted Cracking of Ni-Base Alloys [Corrosion and  

NLE Websites -- All DOE Office Websites (Extended Search)

LWRs > Environmentally Assisted LWRs > Environmentally Assisted Cracking of Ni-Base Alloys Capabilities Materials Testing Environmentally Assisted Cracking (EAC) of Reactor Materials Corrosion Performance/Metal Dusting Overview Light Water Reactors Fatigue Testing of Carbon Steels and Low-Alloy Steels Environmentally Assisted Cracking of Ni-Base Alloys Irradiation-Induced Stress Corrosion Cracking of Austenitic Stainless Steels Steam Generator Tube Integrity Program Air Oxidation Kinetics for Zr-based Alloys Fossil Energy Fusion Energy Metal Dusting Publications List Irradiated Materials Steam Generator Tube Integrity Other Facilities Work with Argonne Contact us For Employees Site Map Help Join us on Facebook Follow us on Twitter NE on Flickr Corrosion and Mechanics of Materials Light Water Reactors

345

Gamow-Teller transitions from {sup 56}Ni  

Science Conference Proceedings (OSTI)

A new technique to measure (p,n) charge-exchange reactions in inverse kinematics at intermediate energies on unstable isotopes was successfully developed and used to study the {sup 56}Ni(p,n) reaction at 110 MeV/u. Gamow-Teller transition strengths from {sup 56}Ni to {sup 56}Cu were obtained and compared with shell-model predictions in the pf-shell using the KB3G and GXPF1A interactions. The calculations with the GXPF1A interaction reproduce the experimental GT strength distribution much better than the calculations that employed the KB3G interaction, indicating deficiencies in the spin-orbit and proton-neutron residual potentials for the latter. The results are important for improving the description of electron-capture rates on nuclei in the iron region, which are important for modeling the late evolution of core-collapse and thermonuclear supernovae.

Sasano, M. [RIKEN Nishina Center, Wako, 351-0198 (Japan); Perdikakis, G. [National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, MI 48824-1321 (United States) and Joint Institute for Nuclear Astrophysics, Michigan State University, East Lansing, MI 48824 (United States); Zegers, R.G.T. [National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, MI 48824-1321 (United States) and Department of Physics and Astronomy, Michigan State University, East Lansing, MI 48824 (United States); and others

2012-11-12T23:59:59.000Z

346

Novel electrolyte chemistries for Mg-Ni rechargeable batteries.  

DOE Green Energy (OSTI)

Commercial hybrid electric vehicles (HEV) and battery electric vehicles (BEV) serve as means to reduce the nation's dependence on oil. Current electric vehicles use relatively heavy nickel metal hydride (Ni-MH) rechargeable batteries. Li-ion rechargeable batteries have been developed extensively as the replacement; however, the high cost and safety concerns are still issues to be resolved before large-scale production. In this study, we propose a new highly conductive solid polymer electrolyte for Mg-Ni high electrochemical capacity batteries. The traditional corrosive alkaline aqueous electrolyte (KOH) is replaced with a dry polymer with conductivity on the order of 10{sup -2} S/cm, as measured by impedance spectroscopy. Several potential novel polymer and polymer composite candidates are presented with the best-performing electrolyte results for full cell testing and cycling.

Garcia-Diaz, Brenda (Savannah River National Laboratory); Kane, Marie; Au, Ming (Savannah River National Laboratory)

2010-10-01T23:59:59.000Z

347

Fabrication Of Buried Self-Organized Stripes In The Ni/C{sub 60} Composite  

Science Conference Proceedings (OSTI)

A periodic array of striped nanoscopic domains, embedded in the epitaxially grown Ni layer, was formed after thermal annealing of the Ni/Ni+C{sub 60}/C{sub 60}/Ni thin multilayer sequence deposited on the MgO(001) monocrystal. The composite was annealed in 100 deg. C/1 hr increments in the range of 200-600 deg. C, and the structural evolution of the composite was analyzed mainly by Rutherford Backscattering and Scanning Electron Microscopy. The periodic system of the stripes was revealed after annealing at 600 deg. C. The possible mechanism of the domain formation is suggested as follows: temperatures below 500 deg. C incite diffusion (and consecutive disintegration) of the C{sub 60} molecules; temperatures above 500 deg. C induce forceful intermixing of the upper Ni/Ni+C{sub 60}/C{sub 60} layers; due to the pronounced immiscibility of the Ni and C (C{sub 60}) components the process of the phase separation is triggered. In the confined crystalline matrix of the buffer Ni layer the separation proceeds coordinately according to the Ni lattice template - the stripe domains are formed in a direction parallel to the main crystallographic orientation (001) of the Ni epilayer.

Vacik, J. [Nuclear Physics Institute (NPI) of AS CR, CZ-25068 Husinec - Rez (Czech Republic); Research Center Rez, 250 68 Husinec - Rez (Czech Republic); Lavrentiev, V.; Horak, P. [Nuclear Physics Institute (NPI) of AS CR, CZ-25068 Husinec - Rez (Czech Republic); Narumi, K. [Japan Atomic Energy Agency (JAEA), 1233 Watanuki, Takasaki, 370-1292 Gunma (Japan)

2011-06-01T23:59:59.000Z

348

Ultra-shallow quantum dots in an undoped GaAs/AlGaAs two-dimensional electron gas  

SciTech Connect

We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2 Multiplication-Sign 10{sup 11} cm{sup -2}) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be gated with surface metallic gates patterned by e-beam lithography, as demonstrated here from single-level transport through a quantum dot showing large charging energies (up to 1.75 meV) and excited state energies (up to 0.5 meV).

Mak, W. Y.; Sfigakis, F.; Beere, H. E.; Farrer, I.; Griffiths, J. P.; Jones, G. A. C.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom)] [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom); Das Gupta, K. [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom) [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom); Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076 (India); Klochan, O.; Hamilton, A. R. [School of Physics, University of New South Wales, Sydney (Australia)] [School of Physics, University of New South Wales, Sydney (Australia)

2013-03-11T23:59:59.000Z

349

Terrestrial Concentrator PV Modules Based on GaInP/GaAs/Ge TJ Cells and Minilens Panels  

SciTech Connect

This paper is a description of research activity in the field of cost-effective modules realizing the concept of very high solar concentration with small-aperture area Fresnel lenses and multijunction III-V cells. Structural simplicity and 'all-glass' design are the guiding principles of the corresponding development. The advanced concentrator modules are made with silicone Fresnel lens panels (from 8 up to 144 lenses, each lens is 4 times 4 cm{sup 2} in aperture area) with composite structure. GaInP/GaAs/Ge triple-junction cells with average efficiencies of 31.1 and 34.7% at 1000 suns were used for the modules. Conversion efficiency as high as 26.3% has been measured indoors in a test module using a newly developed large-area solar simulator.

Rumyantsev, V. D.; Sadchikov, N. A.; Chalov, A. E.; Ionova, E. A.; Friedman, D. J.; Glenn, G.

2006-01-01T23:59:59.000Z

350

Quaternary Bismide Alloy ByGa1-yAs1-xBix Lattice Matched to GaAs  

DOE Green Energy (OSTI)

We report on the lattice matched quaternary alloy, B{sub y}Ga{sub 1-y}As{sub 1-x}Bi{sub x} grown by molecular beam epitaxy at conditions conducive to bismuth incorporation. Incorporating a smaller atom (boron) along with the larger atom (bismuth) allows for a reduction of the epi-layer strain and lattice matching to GaAs for compositions of Bi:B{approx_equal}1.3:1. The addition of boron flux does not significantly affect the bismuth incorporation and no change in the band gap energy is observed with increasing boron content. However, excess, non-substitutional boron is incorporated which leads to an increase in hole density, as well as an increase in the density of shallow in-gap states as observed by the loss of localization of photo-excited excitons.

Deaton, D. A.; Ptak, A. J.; Alberi, K.; Mascarenhas, A.

2012-07-15T23:59:59.000Z

351

Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation dose on dc characteristics and the reliability of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. The HEMTs were irradiated with protons at a fixed energy of 5 MeV and doses ranging from 109 to 2 1014 cm-2. For the dc characteristics, there was only minimal degradation of saturation drain current (IDSS), transconductance (gm), electron mobility and sheet carrier concentration at doses below 2 1013 cm-2, while the reduction of these parameters were 15%, 9%, 41% and 16.6%, respectively, at a dose of 2 1014 cm-2. At this same dose condition, increases of 37% in drain breakdown voltage (VBR) and of 45% in critical voltage (Vcri) were observed. The improvement of device reliability was attributed to the modification of the depletion region due to the introduction of a higher density of defects after irradiation at a higher dose.

Liu, L. [University of Florida, Gainesville; Cuervo, C.V. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

352

Harmonic Responses in 2DEG AlGaAs/GaAs HEMT Devices Due to Plasma Wave Interaction  

Science Conference Proceedings (OSTI)

Plasma waves are oscillations of electron density in time and space, and in deep submicron field effect transistors, typical plasma frequencies, omega{sub p}, lie in the terahertz range and do not involve any quantum transitions. Hence, using plasma wave excitation for detection and/or generation of THz oscillations is a very promising approach. In this paper, the investigation of plasma wave interaction between the plasma waves propagating in a short-channel High-Electron-Mobility Transistor (HEMT) and the radiated electromagnetic waves was carried out. Experimentally, we have demonstrated the detection of the terahertz (THz) radiation by an AlGaAs/GaAs HEMT up to third harmonic at room temperature and their resonant responses show very good agreement with the calculated results.

Hashim, A. M.; Alias, Q. I. [Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Kasai, S.; Hasegawa, H. [Research Center for Integrated Quantum Electronics, Hokkaido University North 12 West 8, Sapporo 060-8628 (Japan)

2010-03-11T23:59:59.000Z

353

Subpicosecond spin relaxation in GaAsSb multiple quantum wells K. C. Hall,a)  

E-Print Network (OSTI)

Subpicosecond spin relaxation in GaAsSb multiple quantum wells K. C. Hall,a) S. W. Leonard, and H quantum wells are measured at 295 K using time-resolved circular dichroism induced by 1.5 m, 100 fs pulses times shorter than those in InGaAs and InGaAsP wells with similar band gaps. The shorter relaxation

Van Driel, Henry M.

354

Neutron to proton ratios of quasiprojectile and midrapidity emission in the {sup 58}Ni+{sup 58}Ni reaction at 52 MeV/nucleon  

SciTech Connect

By combining data from a charged particle {sup 58}Ni+{sup 58}Ni experiment at 52 MeV/nucleon with an {sup 36}Ar+{sup 58}Ni experiment at 50 MeV/nucleon for which free neutrons have been detected, an increase in the neutron to proton ratio of the whole nuclear material at midrapidity has been experimentally observed in the reaction {sup 58}Ni+{sup 58}Ni at 52 MeV/nucleon. The neutron-to-proton ratio of the quasi-projectile emission is analyzed for the same reactions and is seen to decrease below the ratio of the initial system. Those observations suggest that an asymmetric exchange of neutrons and protons between the quasiprojectile and the midrapidity region exists.

Theriault, D.; Vallee, A.; Gingras, L.; Larochelle, Y.; Roy, R.; April, A.; Beaulieu, L.; Grenier, F.; Lemieux, F.; Moisan, J.; St-Pierre, C.; Turbide, S. [Laboratoire de Physique Nucleaire, Departement de Physique, Universite Laval, Quebec, G1K 7P4 (Canada); Samri, M. [Laboratoire de Physique Nucleaire et Applications, Universite Ibn Tofail, Kenitra (Morocco); Borderie, B.; Rivet, M. F. [Institut de Physique Nucleaire, IN2P3-CNRS, F-91406 Orsay Cedex (France); Bougault, R.; Colin, J.; Cussol, D.; Durand, D.; Lecolley, J.F. [LPC, IN2P3-CNRS, ISMRA and Universite, F-14050 Caen Cedex (France)] [and others

2005-01-01T23:59:59.000Z

355

Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors  

SciTech Connect

A drift-diffusion transport model has been used to examine the performance capabilities of AlGaN/GaN Npn heterojunction bipolar transistors (HBTs). The Gummel plot from the first GaN-based HBT structure recently demonstrated is adjusted with simulation by using experimental mobility and lifetime reported in the literature. Numerical results have been explored to study the effect of the p-type Mg doping and its incomplete ionization in the base. The high base resistance induced by the deep acceptor level is found to be the cause of limiting current gain values. Increasing the operating temperature of the device activates more carriers in the base. An improvement of the simulated current gain by a factor of 2 to 4 between 25 and 300 C agrees well with the reported experimental results. A preliminary analysis of high frequency characteristics indicates substantial progress of predicted rf performances by operating the device at higher temperature due to a reduced extrinsic base resistivity.

MONIER,C.; PEARTON,S.J.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-03-10T23:59:59.000Z

356

Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN  

DOE Green Energy (OSTI)

Etch rates up to 7,000 {angstrom}/min. for GaN are obtained in Cl{sub 2}/H{sub 2}/Ar or BCl{sub 3}/Ar ECR discharges at 1--3mTorr and moderate dc biases. Typical rates with HI/H{sub 2} are about a factor of three lower under the same conditions, while CH{sub 4}/H{sub 2} produces maximum rates of only {approximately}2,000 {angstrom}/min. The role of additives such as SF{sub 6}, N{sub 2}, H{sub 2} or Ar to the basic chlorine, bromine, iodine or methane-hydrogen plasma chemistries are discussed. Their effect can be either chemical (in forming volatile products with N) or physical (in breaking bonds or enhancing desorption of the etch products). The nitrides differ from conventional III-V`s in that bond-breaking to allow formation of the etch products is a critical factor. Threshold ion energies for the onset of etching of GaN, InGaN and InAlN are {ge} 75 eV.

Pearton, S.J.; Vartuli, C.B.; Lee, J.W.; Donovan, S.M.; MacKenzie, J.D.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States); Shul, R.J. [Sandia National Labs., Albuquerque, NM (United States); McLane, G.F. [Army Research Lab., Fort Monmouth, NJ (United States); Ren, F. [AT and T Bell Labs., Murray Hill, NJ (United States)

1996-04-01T23:59:59.000Z

357

Reliability of GaN HEMTs: Electrical and Radiation-induced Failure ...  

Science Conference Proceedings (OSTI)

Symposium, Advanced Materials for Power Electronics, Power Conditioning, and Power Conversion II. Presentation Title, Reliability of GaN HEMTs: Electrical ...

358

Thermoelectric Study of InGaN-Based Materials for Thermal Energy ...  

Science Conference Proceedings (OSTI)

Presentation Title, Thermoelectric Study of InGaN-Based Materials for Thermal ... Structural and Thermal Stability Properties of Cellulose Nanocomposites with ...

359

X-Ray Studies of GaN Film Grown on Si Using Electrochemical Deposition Techniques  

Science Conference Proceedings (OSTI)

This paper reports on the X-ray studies of GaN thin films deposited on Si (111) substrate at different current density using electrochemical deposition technique. The structural properties of GaN films were studied by X-ray diffraction (XRD). XRD analysis showed that hexagonal wurtzite and cubic zinc blende GaN phases were both deposited on Si (111). The lattice constants, the average size of h-GaN crystals and the in-plane (along a-axis) and out of plane (along c-axis) strains were calculated from XRD analysis.

Al-Heuseen, K.; Hashim, M. R. [Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia (USM), 11800 Minden, Penang (Malaysia)

2011-03-30T23:59:59.000Z

360

M4, Semipolar AlGaN Buffers for Deep Ultraviolet Diode Lasers  

Science Conference Proceedings (OSTI)

On-axis reciprocal space mapping of the graded AlGaN showed tilt at each interface associated ..... New Concepts and Materials for Solar Power Conversion

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361

Structure and Composition Peculiarities of GaN/AlN Multiple ...  

Science Conference Proceedings (OSTI)

Thickness of AlN and GaN layers in MQWs (multiple quantum wells) were ... InAs Quantum Dots by Ballistic Electron Emission Microscopy and Spectroscopy.

362

A Paleoenvironmental Study of the 2.7 GA Tumbiana Formation, Fortescue Basin, Western Australia.  

E-Print Network (OSTI)

??A paleoecological and paleoenvironmental study was conducted on the 2.7 Ga Meentheena Member of the Tumbiana Formation, Fortescue Basin, Western Australia. It involved the integrated… (more)

Coffey, Jessica

2011-01-01T23:59:59.000Z

363

Cu-Ga-Se Thin Films Prepared by a Combination of Electrodeposition and Evaporation Techniques  

Science Conference Proceedings (OSTI)

Cu-Ga-Se thin films were prepared using a combination of electrodeposition and evaporation techniques. A Cu-Se/Mo/glass precursor thin film was first prepared by galvanostatic electrodeposition. On top of this film three different thicknesses of Ga were deposited by evaporation. The Cu-Ga-Se thin films were formed by annealing the Ga/Cu-Se/Mo/glass thin film configuration in a tubular chamber with Se powder, at different temperatures. Thin films were characterized by X-ray diffraction (XRD), photocurrent spectroscopy (PS), inductively coupled plasma (ICP) analysis, and scanning electron microscopy (SEM). The detailed analysis from X-ray reveals that after annealing at 550 C the CuGaSe{sub 2} phase is formed when the thickness of Ga is 0.25 {mu}m, however at 0.5 {mu}m and 1.0 {mu}m Ga the formation of CuGa{sub 3}Se{sub 5} and CuGa{sub 5}Se{sub 8} phases is observed respectively. Band gap values were obtained using photocurrent spectroscopy.

Fernandez, A. M.; Turner, J. A.

2012-04-01T23:59:59.000Z

364

Electron and hole gas in modulation-doped GaAs/Al{sub 1-x}Ga{sub x}As radial heterojunctions  

Science Conference Proceedings (OSTI)

We perform self-consistent Schroedinger-Poisson calculations with exchange and correlation corrections to determine the electron and hole gas in a radial heterojunction formed in a GaAs/AlGaAs core-multi-shell nanowire, which is either n- or p-doped. We show that the electron and hole gases can be tuned to different localizations and symmetries inside the core as a function of the doping density/gate potential. Contrary to planar heterojunctions, conduction electrons do not form a uniform 2D electron gas (2DEG) localized at the GaAs/AlGaAs interface, but rather show a transition between an isotropic, cylindrical distribution deep in the GaAs core (low doping) and a set of six tunnel-coupled quasi-1D channels at the edges of the interface (high doping). Holes, on the other hand, are much more localized at the GaAs/AlGaAs interface. At low doping, they present an additional localization pattern with six separated 2DEGs strips. The field generated by a back-gate may easily deform the electron or hole gas, breaking the sixfold symmetry. Single 2DEGs at one interface or multiple quasi-1D channels are shown to form as a function of voltage intensity, polarity, and carrier type.

Bertoni, Andrea; Royo, Miquel; Mahawish, Farah; Goldoni, Guido [CNR-NANO S3, Istituto Nanoscienze, Via Campi 213/a, 41125 Modena (Italy); Department of Physics, University of Modena and Reggio Emilia and CNR-NANO S3, Istituto Nanoscienze, Via Campi 213/a, 41125 Modena (Italy)

2011-11-15T23:59:59.000Z

365

Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy  

Science Conference Proceedings (OSTI)

Quaternary AlInGaN layers were grown on conventional GaN buffer layers on sapphire by metal organic vapour phase epitaxy at different surface temperatures and different reactor pressures with constant precursor flow conditions. A wide range in compositions within 30-62% Al, 5-29% In, and 23-53% Ga was covered, which leads to different strain states from high tensile to high compressive. From high-resolution x-ray diffraction and Rutherford backscattering spectrometry, we determined the compositions, strain states, and crystal quality of the AlInGaN layers. Atomic force microscopy measurements were performed to characterize the surface morphology. A critical strain value for maximum In incorporation near the AlInGaN/GaN interface is presented. For compressively strained layers, In incorporation is limited at the interface as residual strain cannot exceed an empirical critical value of about 1.1%. Relaxation occurs at about 15 nm thickness accompanied by strong In pulling. Tensile strained layers can be grown pseudomorphically up to 70 nm at a strain state of 0.96%. A model for relaxation in compressively strained AlInGaN with virtual discrete sub-layers, which illustrates the gradually changing lattice constant during stress reduction is presented.

Reuters, Benjamin; Finken, M.; Wille, A.; Kalisch, H.; Vescan, A. [RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074 Aachen (Germany); Juelich Aachen Research Alliance, JARA-FIT, Wilhelm-Johnen-Strasse, 52428 Juelich (Germany); Hollaender, B. [Juelich Aachen Research Alliance, JARA-FIT, Wilhelm-Johnen-Strasse, 52428 Juelich (Germany); Forschungszentrum Juelich GmbH, PGI9-IT, 52425 Juelich (Germany); Heuken, M. [RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074 Aachen (Germany); AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany)

2012-11-01T23:59:59.000Z

366

Analysis of the GaInP/GaAs/1-eV/Ge Cell and Related Structures for Terrestrial Concentrator Application: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the analysis of the potential of GaInP/GaAs/1-eV/Ge four-junction solar cell to improve on the efficiency of the state-of-the-art GaInP/GaAs/Ge benchmark. We emphasize three factors: (1) The newly proposed terrestrial concentrator spectrum has a lower ratio of red to blue light than does the old AM1.5 direct standard spectrum. (2) Standard two-layer antireflection coatings do not provide near-zero reflectance over the full spectral range of interest for these devices. (3) GaInNAs junctions used to date for the 1-eV junction have quantum efficiencies less than {approx}75%. These factors all limit the device current, adversely affecting the four-junction efficiency. We discuss strategies for ameliorating this problem, including going to alternate structures such as a GaInP/GaAs/0.9-eV three-junction device.

Friedman, D. J.; Kurtz, S. R.; Geisz, J. F.

2002-05-01T23:59:59.000Z

367

On-Sun Comparison of GaInP2/GaAs Tandem Cells with Top-Cell Thickness Varied  

DOE Green Energy (OSTI)

This study compares the on-sun performance of a set of GaInP2/GaAs tandem cells with different GaInP2 top-cell thicknesses. Because high-efficiency III-V cells are best suited to concentrating photovoltaic (CPV) applications, the cells were mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for an ''air mass 1.5 global'' (AM 1.5G) or a ''low aerosol optical depth'' (Low AOD) spectrum perform the best, and (2) a simple device model using the measured direct spectra as an input gives the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

McMahon, W. E.; Emery, K. A.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

2005-01-01T23:59:59.000Z

368

Primary Dendrite Array Morphology: Observations from Ground ...  

Science Conference Proceedings (OSTI)

Abstract Scope, Influence of natural convection on primary dendrite array ... Solidification and Microstructure Evaluation of the Ni-Ga and Co-Ni-Ga Alloys.

369

Tribological behavior of NiTi alloy against 52100 steel and WC at elevated temperatures  

SciTech Connect

The dry tribological behavior of a Ti-50.3 at.% Ni alloy at temperatures of 25 deg. C, 50 deg. C and 200 deg. C was studied. The wear tests were performed on a high temperature pin-on-disk tribometer using 52100 steel and tungsten carbide pins. The worn surfaces of the NiTi alloy were examined by scanning electron microscope. The results showed that in the wear tests involving steel pins, the wear rate of the NiTi decreased as the wear testing temperature was increased. However, for the NiTi/WC contact, a reverse trend was observed. There was also a large decrease in the coefficient of friction for the NiTi/steel contact with increasing wear testing temperature. The formation of compact tribological layers could be the main reason for the reduction of the wear rate and coefficient of friction of the NiTi/steel contact at higher wear testing temperatures.

Abedini, M. [School of Metallurgy and Materials Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Ghasemi, H.M., E-mail: hghasemi@ut.ac.ir [School of Metallurgy and Materials Engineering, University of Tehran, Tehran (Iran, Islamic Republic of); Ahmadabadi, M. Nili [School of Metallurgy and Materials Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

2010-07-15T23:59:59.000Z

370

The consequences of high injected carrier densities on carrier localisation and efficiency droop in InGaN/GaN quantum well structures  

E-Print Network (OSTI)

in the concentration of the randomly distributed In atoms on the optical properties of InGaN/GaN quantum wells. On the basis of this comparison of theory with experiment we attribute the reduction in the S- shape temperature dependence to the saturation... , the buffer layer was grown in a Thomas Swan 6x2” metalorganic vapour-phase epitaxy reactor using trimethyl gallium (TMG), silane (SiH4) and ammonia (NH3) as precursors, with hydrogen as the carrier gas. The GaN buffer layer was deposited at 1020 şC on a...

Hammersley, S; Watson-Parris, D; Dawson, P; Godfrey, M; Badcock, T; Kappers, M; McAleese, C; Oliver, R; Humphreys, C

2012-04-18T23:59:59.000Z

371

InGaAsN Solar Cells with 1.0eV Bandgap, Lattice Matched to GaAs  

DOE Green Energy (OSTI)

The design, growth by metal-organic chemical vapor deposition, and processing of an In{sub 0.07}Ga{sub 0.93}As{sub 0.98}N{sub 0.02} solar Al, with 1.0 ev bandgap, lattice matched to GaAs is described. The hole diffusion length in annealed, n-type InGaAsN is 0.6-0.8 pm, and solar cell internal quantum efficiencies > 70% arc obwined. Optical studies indicate that defects or impurities, from InGAsN doping and nitrogen incorporation, limit solar cell performance.

Allerman, A.A.; Banas, J.J.; Gee, J.M.; Hammons, B.E.; Jones, E.D.; Kurtz, S.R.

1998-11-24T23:59:59.000Z

372

INTERPRTATION DES FAUTES D'EMPILEMENT DANS L'ANTIFERROMAGNTIQUE K2NiF4  

E-Print Network (OSTI)

859. INTERPR�TATION DES FAUTES D'EMPILEMENT DANS L'ANTIFERROMAGN�TIQUE K2NiF4 Par R. PLUMIER. 2014 Nous montrons qu'une légère déformation orthorhombique de la maille de K2NiF4 entraîne parNiF4 cell leads to a decrease of the free energy of the crystal through an exchange striction

Paris-Sud XI, Université de

373

High Temperature Corrosion Resistance of Fe-Ni-Cr Alloys in CO2 ...  

Science Conference Proceedings (OSTI)

Austenitic Steel Oxidation in Steam: Alloy Composition and Surface Modification ... Ni-Base Alloys for Use as Components in Advanced-USC Steam Turbines.

374

In-Situ Neutron Diffraction Study of Porous NiO-YSZ Composite ...  

Science Conference Proceedings (OSTI)

Presentation Title, In-Situ Neutron Diffraction Study of Porous NiO-YSZ Composite ... Gas Turbines of the Future: Hydrogen and Oxy-Combustion Environments.

375

Shape Memory Response of NiTiHfPd High Strength and High ...  

Science Conference Proceedings (OSTI)

In this study, shape memory and superelastic properties of NiTiHfPd polycrystalline and single crystalline SMAs as functions of aging temperature and time were ...

376

Investigation on Oxidation Resistance of NiCoCrAlY Coating ...  

Science Conference Proceedings (OSTI)

Presentation Title, Investigation on Oxidation Resistance of NiCoCrAlY Coating Irradiated by High Current Pulsed Electron Beam. Author(s), Xianxiu Mei, Cunxia  ...

377

Pressure Water Leaching Molybdenum and Nickel from Mo-Ni ore of ...  

Science Conference Proceedings (OSTI)

Presentation Title, Pressure Water Leaching Molybdenum and Nickel from Mo-Ni ore of Black Shale without Reagent. Author(s), Zhigan Deng. On-Site Speaker ...

378

Further Characterization of New NiTi Wire and Rotary Endodontic ...  

Science Conference Proceedings (OSTI)

Presentation Title, Further Characterization of New NiTi Wire and Rotary ... Higher-resolution transmission electron microscopy examination of M-Wire used to ...

379

Effects of Changes in Alloy Composition on Toughness of Ni-Ta-X ...  

Science Conference Proceedings (OSTI)

On-Site Speaker (Planned), John J Lewandowski. Abstract Scope, The effects of changes in alloy chemistry on the fracture behavior of Ni-Ta-X glasses are ...

380

F-8: Modeling of Mn-Ni-Si-Cu Precipitation in Reactor Pressure ...  

Science Conference Proceedings (OSTI)

Presentation Title, F-8: Modeling of Mn-Ni-Si-Cu Precipitation in Reactor .... Steels 316 and Comparison with the Rate Theory Model of a Multicomponent System.

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

SF6432-NI (02-01-12) Fixed Price Former Soviet Union  

NLE Websites -- All DOE Office Websites (Extended Search)

CORPORATION SF 6432-NI (072013) SECTION II STANDARD TERMS AND CONDITIONS FOR FIXED PRICE CONTRACTS WITH THE NEWLY INDEPENDENT STATES OF THE FORMER SOVIET UNION INDEX OF...

382

Mixed Conducting Molten Salt Electrolyte for Na/NiCl 2 Cell  

Science Conference Proceedings (OSTI)

Catalytic Properties of Ni-Al Intermetallic Nanoparticle Catalysts for Hydrogen Production from Methanol and Methane · Ca, Li and Mg Based Lightweight ...

383

Thermal and irradiation-induced phase separation in Fe-Ni based ...  

Science Conference Proceedings (OSTI)

magnetic, low-expansion Invar-type alloys and model austenitic Fe-Ni based alloys studied for ...... fast reactors such as the Fast Flux Test Facility (FFTF).

384

Thermodynamic Modeling of the Mg-Cu-Ni Ternary System using ...  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, COM 2011. Symposium, LIGHT METALS. Presentation Title, Thermodynamic Modeling of the Mg-Cu-Ni Ternary System using the ...

385

Effect of Steam Exposure on the Creep Properties of Ni-Based Alloys  

Science Conference Proceedings (OSTI)

Symposium, Properties, Processing, and Performance of Steels and Ni-Based Alloys for Advanced Steam Conditions. Presentation Title, Effect of Steam ...

386

Steam Oxidation of Fe-20Cr-30Ni-2Nb Austenitic Steel at 973 K  

Science Conference Proceedings (OSTI)

Symposium, Properties, Processing, and Performance of Steels and Ni-Based Alloys for Advanced Steam Conditions. Presentation Title, Steam Oxidation of ...

387

Influence of the Water Vapour on the Oxidation Behaviour of a Ni ...  

Science Conference Proceedings (OSTI)

Presentation Title, Influence of the Water Vapour on the Oxidation Behaviour of a Ni-based Alloy – Interest of an In-situ Microscopic Approach of Phenomena.

388

Ageing and Toughness of a Mn-Ni-Mo PWR Steel  

Science Conference Proceedings (OSTI)

Abstract Scope, Mn-Ni-Mo steels are widely used in the fabrication of pressurisers, steam generators and pressure vessels of pressurised water reactors (PWR).

389

Reduction of the Ni- and Ti-oxide mixtures by natural gas  

Science Conference Proceedings (OSTI)

In this work, the reduction of Ni- and Ti-oxides by natural gas has been studied. ... Reaction mechanism and reaction rate of Sn evaporation from liquid steel.

390

D3: Weld Solidification Behavior of Ni-base Superalloys for Use in ...  

Science Conference Proceedings (OSTI)

Presentation Title, D3: Weld Solidification Behavior of Ni-base Superalloys for Use in Advanced Supercritical Coal-fired Power Plants. Author(s), David Tung, ...

391

Investigation on Corrosion Behaviour of Ni-Based Alloys in Molten ...  

Science Conference Proceedings (OSTI)

In this paper, corrosion processes of Ni-based superalloys including Inconel 600, Hastelloy X and Hastelloy C-276 were investigated in molten fluoride salts ...

392

Self-assembly of Ni-nanoparticles in Aerosols Produced Thermally ...  

Science Conference Proceedings (OSTI)

Abstract Scope, The self-assembly behavior in Ni-aerosols was studied on- ground ... In microgravity, convection within the thermally produced aerosols could be ...

393

A20: Growth of Freestanding GaN by HVPE on 3” Sapphire Substrate  

Science Conference Proceedings (OSTI)

Catalytic Properties of Ni3Al Foils for Methane Steam Reforming · Characterization of the Crystallographic Textures and Mechanical Anisotropy Factors in Two ...

394

K8, HVPE Homoepitaxy of p-Type GaN on n-Type Catalyst Free ...  

Science Conference Proceedings (OSTI)

We present the growth of p-type HVPE GaN using catalyst free GaN nitride nanowires as a lattice matched substrate. The nanowires were grown using plasma ...

395

Analisi dei processi di ricombinazione in diodi LED basati su GaN: caratterizzazione ottica e misure DLTS.  

E-Print Network (OSTI)

??In questo lavoro vengono analizzati i processi di ricombinazione nei diodi LED basati su GaN/InGaN mediante caratterizzazione ottica dei dispositivi e misure DLTS. In particolare… (more)

La Grassa, Marco

2013-01-01T23:59:59.000Z

396

Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density  

Science Conference Proceedings (OSTI)

Molecular-beam epitaxy is used for growing structures differing in doping technique and doping level and having a high two-dimensional-electron concentration n{sub s} in the quantum well. The effect of doping combining uniform and {delta} doping on the electron-transport properties of heterostructures is investigated. A new type of structure with a two-sided silicon {delta} doping of GaAs transition layers located on the quantum-well boundaries is proposed. The largest value of electron mobility {mu}{sub H} = 1520 cm{sup 2}/(V s) is obtained simultaneously with a high electron density n{sub s} = 1.37 Multiplication-Sign 10{sup 13} cm{sup -2} at 300 K with such a doping. It is associated with decreasing electron scattering by an ionized impurity, which is confirmed by the carried out calculations.

Khabibullin, R. A., E-mail: khabibullin_r@mail.ru; Vasil'evskii, I. S. [MEPHI National Research Nuclear University (Russian Federation); Galiev, G. B.; Klimov, E. A. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Ponomarev, D. S. [MEPHI National Research Nuclear University (Russian Federation); Lunin, R. A.; Kulbachinskii, V. A. [Moscow State University (Russian Federation)

2011-10-15T23:59:59.000Z

397

Method of making V.sub.3 Ga superconductors  

DOE Patents (OSTI)

An improved method for producing a vanadium-gallium superconductor wire having aluminum as a component thereof is disclosed, said wire being encased in a gallium bearing copper sheath. The superconductors disclosed herein may be fabricated under normal atmospheres and room temperatures by forming a tubular shaped billet having a core composed of an alloy of vanadium and aluminum and an outer sheath composed of an alloy of copper, gallium and aluminum. Thereafter the entire billet is swage reduced to form a wire therefrom and heat treated to form a layer of V.sub.3 Ga in the interior of the wire.

Dew-Hughes, David (Bellport, NY)

1980-01-01T23:59:59.000Z

398

A3, Depth Resolved Strain and Composition Studies on InGaN and ...  

Science Conference Proceedings (OSTI)

... devices due to its large spontaneous polarization and conduction band offset. ... 620°C with fixed beam fluxes of In and Ga under the same nitrogen plasma condition. ... Inexpensive, Non-Toxic Thermoelectric Materials for Waste Heat Recovery ..... Y5, Defect Characterization of InGaN Layer by Deep Level Transient and ...

399

Development of a Low Cost Insulated Foil Substrate for Cu(InGaSe)2 Photovoltaics  

DOE Green Energy (OSTI)

The project validated the use of stainless steel flexible substrate coated with silicone-based resin dielectric, developed by Dow Corning Corporation, for Cu(InGa)Se2 based photovoltaics. The projects driving force was the high performance of Cu(InGa)Se2 based photovoltaics coupled with potential cost reduction that could be achieved with dielectric coated SS web substrate.

ERTEN ESER

2012-01-22T23:59:59.000Z

400

High efficiency light emitting diode with anisotropically etched GaN-sapphire interface  

E-Print Network (OSTI)

High efficiency light emitting diode with anisotropically etched GaN- sapphire interface M. H. Lo and optimization of a light-emitting diode projection micro-stereolithography three-dimensional manufacturingGaN micro-light emitting diodes Appl. Phys. Lett. 101, 231110 (2012) A bright cadmium-free, hybrid organic

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution  

E-Print Network (OSTI)

Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution Aurélien David of photonic crystal PhC -assisted gallium nitride light-emitting diodes LEDs to the existence of unextracted a promising but challenging solution towards efficient solid-state lighting. Conventional GaN-based light-emitting

Recanati, Catherine

402

GaN light-emitting diodes with Archimedean lattice photonic crystals Aurlien David,a  

E-Print Network (OSTI)

GaN light-emitting diodes with Archimedean lattice photonic crystals Aurélien David,a Tetsuo Fujii 2005; published online 16 February 2006 We study GaN-based light emitting diodes incorporating light- emitting diodes LEDs , as they could extract the emitted light otherwise trapped inside

Recanati, Catherine

403

Cubic GaN Light Emitting Diode Grown by Metalorganic Vapor-Phase Epitaxy  

E-Print Network (OSTI)

this paper, we report on the doping characteristics of Si and Mg in the growth of cubic GaN by metalorganic vapor-phase epitaxy (MOVPE). We also report the growth of a p-n diode structure made of cubic GaN, and its characterization by electron-beam-induced-current (EBIC) and current injection measurements.

Hidenao Tanaka Member; Vapor-phase Epitaxy; Atsushi Nakadaira

2000-01-01T23:59:59.000Z

404

GaN membrane-supported UV photodetectors manufactured using nanolithographic processes  

Science Conference Proceedings (OSTI)

Membrane GaN metal-semiconductor-metal (MSM) photodetector structures using nanolithographic techniques have been manufactured for the first time. Very low dark currents and unexpected high values for the responsivity have been obtained. It seems that ... Keywords: GaN, Membrane, Nanolithography, Responsivity, SEM

A. Müller; G. Konstantinidis; M. Dragoman; D. Neculoiu; A. Dinescu; M. Androulidaki; M. Kayambaki; A. Stavrinidis; D. Vasilache; C. Buiculescu; I. Petrini; A. Kostopoulos; D. Dascalu

2009-02-01T23:59:59.000Z

405

The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes  

SciTech Connect

Optical and light-emitting diode structures with an active InGaN region containing short-period InGaN/GaN superlattices are studied. It is shown that short-period superlattices are thin two-dimensional layers with a relatively low In content that contain inclusions with a high In content 1-3 nm thick. Inclusions manifest themselves from the point of view of optical properties as a nonuniform array of quantum dots involved in a residual quantum well. The use of short-period superlattices in light-emitting diode structures allows one to decrease the concentration of nonradiative centers, as well as to increase the injection of carriers in the active region due to an increase in the effective height of the AlGaN barrier, which in general leads to an increase in the quantum efficiency of light-emitting diodes.

Sizov, V. S., E-mail: vsizov@mail.ioffe.ru; Tsatsulnikov, A. F.; Sakharov, A. V.; Lundin, W. V.; Zavarin, E. E.; Cherkashin, N. A. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Hytch, M. J. [National Center for Scientific Research (CNRS), Center for Material Elaboration and Structural Studies (CEMES) (France); Nikolaev, A. E. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Mintairov, A. M.; He Yan; Merz, J. L. [University of Notre Dame, EE Department (United States)

2010-07-15T23:59:59.000Z

406

Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts  

Science Conference Proceedings (OSTI)

The paper is concerned with the theoretical and experimental studies of the band structure and electrical properties of InAlAs/InGaAs/InAlAs/InP heterostructures containing a composite InGaAs quantum well with InAs and GaAs nanoinserts. From the Shubnikov-de Haas effect, the effective cyclotron mass m{sub c}* is determined experimentally and calculated with consideration for the nonparabolicity of the electron energy spectrum. An approach to estimation of the effective mass is proposed and tested. The approach is based on weighted averaging of the m{sub c}* of the composite quantum well's constituent materials. A first proposed heterostructure containing two InAs inserts symmetrically arranged in the quantum well makes a 26% reduction in m{sub c}* compared to m{sub c}* in the lattice-matched In{sub 0.53}Ga{sub 0.47}As quantum well possible.

Ponomarev, D. S., E-mail: ponomarev_dmitr@mail.ru; Vasil'evskii, I. S. [National Nuclear Research University 'Moscow Engineering Physics Institute (MEPhI)' (Russian Federation); Galiev, G. B.; Klimov, E. A. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Khabibullin, R. A. [National Nuclear Research University 'Moscow Engineering Physics Institute (MEPhI)' (Russian Federation); Kulbachinskii, V. A.; Uzeeva, N. A. [Moscow State University (Russian Federation)

2012-04-15T23:59:59.000Z

407

Cr-Ga-N materials for negative electrodes in Li rechargeable batteries : structure, synthesis and electrochemical performance  

E-Print Network (OSTI)

Electrochemical performances of two ternary compounds (Cr2GaN and Cr3GaN) in the Cr-Ga-N system as possible future anode materials for lithium rechargeable batteries were studied. Motivation for this study was dealt in ...

Kim, Miso

2007-01-01T23:59:59.000Z

408

Micro-Photoluminescence Characterization of Low Density Droplet GaAs Quantum Dots for Single Photon Sources  

Science Conference Proceedings (OSTI)

The GaAs quantum dots in AlGaAs barriers were grown by droplet epitaxy, emitting around 700 nm in wavelength which is compatible with low cost Si based detectors. The excitation power dependent and time resolved micro-photoluminescence measurements identified optical characteristics of exciton and biexciton states which are attributed to good quantum confinements in GaAs QDs.

Ha, S.-K.; Song, J. D.; Lim, J. Y.; Choi, W. J.; Han, I. K.; Lee, J. I. [Nano Convergence Devices Center, KIST, Seoul 136-791 (Korea, Republic of); Bounouar, S.; Donatini, F.; Dang, L. S.; Poizat, J. P. [CEA/CNRS/UJF team 'Nanophysics and semiconductors', Institute Neel/CNRS-UJF, 38042 Grenoble (France); Kim, J. S. [Department of Physics, Yeungnam University, Gyeongsan 712-749 (Korea, Republic of)

2011-12-23T23:59:59.000Z

409

The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission  

Science Conference Proceedings (OSTI)

We present a study on the effects of quantum dot coverage on the properties of InAs dots embedded in GaAs and in metamorphic In0.15Ga0.85As confining layers grown by molecular beam epitaxy on GaAs substrates. We show that redshifted ... Keywords: Long wavelength emission, Molecular beam epitaxy, Quantum dot ripening, Quantum dots

G. Trevisi; L. Seravalli; P. Frigeri; M. Prezioso; J. C. Rimada; E. Gombia; R. Mosca; L. Nasi; C. Bocchi; S. Franchi

2009-03-01T23:59:59.000Z

410

Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes  

E-Print Network (OSTI)

Keywords: GaInN/GaN Light emitting diode temperature Micro-Raman Photoluminescence Electroluminescence well light emitting diode (LED) dies is analyzed by micro-Raman, photoluminescence, cathodoluminescenceJunction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting

Wetzel, Christian M.

411

Influence of post deposition annealing on Y2O3-gated GaAs MOS capacitors and their reliability issues  

Science Conference Proceedings (OSTI)

The feasibility of employing yttrium oxide (Y"2O"3) as high-k gate dielectrics for GaAs metal-oxide-semiconductor (MOS) devices has been investigated. MOS capacitors were fabricated using RF-sputtered deposited Y"2O"3 films on NH"4OH treated n-GaAs substrate. ... Keywords: GaAs, TDDB, Trapping centroid, Y2O3

P. S. Das; A. Biswas

2011-03-01T23:59:59.000Z

412

Direct measurement of interfacial structure in epitaxial Gd2O3 on GaAs (001) using scanning tunneling microscopy  

Science Conference Proceedings (OSTI)

The epitaxial growth of Gd"2O"3 on GaAs (001) has given a low interfacial density of states, resulting in the demonstration of the first inversion-channel GaAs metal-oxide-semiconductor field-effect transistor. Motivated by the significance of this discovery, ... Keywords: Electronic information, GaAs, Gd2O3, Interfacial stacking, Scanning tunneling microscopy

Y. P. Chiu; M. C. Shih; B. C. Huang; J. Y. Shen; M. L. Huang; W. C. Lee; P. Chang; T. H. Chiang; M. Hong; J. Kwo

2011-07-01T23:59:59.000Z

413

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE  

NLE Websites -- All DOE Office Websites (Extended Search)

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE Identification of the Parasitic Chemical Reactions during AlGaN OMVPE by J. R. Creighton, M. E. Coltrin, and W. G. Breiland Motivation-GaN and AlGaN alloys are ex- tremely important materials with widespread applications for optoelectronics (e.g. solid state lighting) and high power electronics. Or- ganometallic vapor phase epitaxy (OMVPE) is the primary deposition methodology, but it suf- fers from several growth chemistry anomalies. Growth rate and alloy composition are often a sensitive function of temperature and other reac- tor variables. These factors make the AlGaN OMVPE process difficult to control and in- crease the cost of the material. Conventional wisdom has been that the non-ideal OMVPE behavior is due to parasitic "pre-reactions" be-

414

The quantum efficiency of InGaAsSb thermophotovoltaic diodes  

DOE Green Energy (OSTI)

Uncoated InGaAsSb/GaSb thermophotovoltaic (TPV) diodes with 0.56 eV (2.2 {micro}m) bandgaps exhibit external quantum efficiencies of 59% at 2 {micro}m, which corresponds to an internal quantum efficiency of 95%. The structures were grown by molecular-beam epitaxy. The devices have electron diffusion lengths as long as 29 {micro}m in 8-{micro}m-wide p-InGaAsSb layers and hole diffusion lengths of 3 {micro}m in 6-{micro}m-wide n-InGaAsSb layers. The electron and hole diffusion lengths appear to increase with increasing p- and n-layer widths, respectively. These excellent minority carrier transport properties of InGaAsSb are well-suited to efficient TPV diode operation.

Martinelli, R.U.; Garbuzov, D.Z.; Lee, H.; Morris, N.; Odubanjo, T.; Taylor, G.C.; Connolly, J.C. [Sarnoff Corp., Princeton, NJ (United States)

1997-10-01T23:59:59.000Z

415

Magnetically active vacancy related defects in irradiated GaN layers  

Science Conference Proceedings (OSTI)

We present the studies of magnetic properties of 2 MeV {sup 4}He{sup +}-irraadiated GaN grown by metal-organic chemical-vapor deposition. Particle irradiation allowed controllable introduction of Ga-vacancy in the samples. The magnetic moments with concentrations changing between 4.3 and 8.3 Multiplication-Sign 10{sup 17}cm{sup -3} showing superparamagnetic blocking at room temperature are observed. The appearance of clear hysteresis curve at T=5K with coercive field of about H{sub C} Almost-Equal-To 270 Oe suggests that the formation of more complex Ga vacancy related defects is promoted with increasing Ga vacancy content. The small concentration of the observed magnetically active defects with respect to the total Ga-vacancy concentration suggests that the presence of the oxygen/hydrogen-related vacancy complexes is the source of the observed magnetic moments.

Kilanski, L.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto Espoo (Finland); Szymczak, R. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Kruszka, R. [Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw (Poland)

2012-08-13T23:59:59.000Z

416

Electron Traps Detected in p-type GaAsN Using Deep Level Transient Spectroscopy  

DOE Green Energy (OSTI)

The GaAsN alloy can have a band gap as small as 1.0 eV when the nitrogen composition is about 2%. Indium can also be added to the alloy to increase lattice matching to GaAs and Ge. These properties are advantageous for developing a highly-efficient, multi-junction solar cell. However, poor GaAsN cell properties, such as low open-circuit voltage, have led to inadequate performance. Deep-level transient spectroscopy of p-type GaAsN has identified an electron trap having an activation energy near 0.2 eV and a trap density of at least 1016 cm-3. This trap level appears with the addition of small amounts of nitrogen to GaAs, which also corresponds to an increased drop in open-circuit voltage.

Johnston, S.; Kurtz, S.; Friedman, D.; Ptak, A.; Ahrenkiel, R.; Crandall, R.

2005-01-01T23:59:59.000Z

417

Upper critical field of Mo-Ni heterostructures  

SciTech Connect

Upper critical field and its anisotropy have been measured on two very short wavelength Mo-Ni heterostructures of different degrees of perfection, lambda = 13.8A (disordered structure) and lambda = 16.6A (layered structure). In both cases the parallel critical field has an unexpected temperature dependence, a large and temperature dependent anisotropy, and over 60% enhancement over the Clogston-Chandrasekhar limit. Data are fit to the Werthamer-Helfand-Hohenberg theory and the spin-orbit scattering times are found to be 1.79 x 10 T s and 2 x 10 T s, respectively.

Uher, C.; Watson, W.J.; Cohn, J.L.; Schuller, I.K.

1985-12-01T23:59:59.000Z

418

Grain Refinement in TiC-Ni3Al Composites  

DOE Green Energy (OSTI)

The Cooperative Research and Development Agreement (CRADA) was to develop composites of TiC-Ni{sub 3}Al with refined grain microstructures for application in diesel engine fuel injection devices. Grain refinement is important for improved wear resistance and high strength for the applications of interest. Attrition milling effectively reduces the initial particle size and leads to a reduction of the final grain size. However, an increase in the oxygen content occurs concomitantly with the grinding operation and decreased densification of the compacts occurs during sintering.

Tiegs, T.N.

2001-01-30T23:59:59.000Z

419

Spectromicroscopy study of interfacial Co/NiO(001)  

SciTech Connect

Photoemission electron microscopy (PEEM) with linearly polarized x-rays is used to determine the orientation of antiferromagnetic domains by monitoring the relative peak intensities at the 3d transition metal L{sub 2} absorption edge. In such an analysis the orientations of the x-ray polarization E and magnetization H with respect to the crystalline axes has to be taken into account. We address this problem by presenting a general expression of the angular dependence for both x-ray absorption spectroscopy and x-ray magnetic linear dichroism (XMLD) for arbitrary direction of E and H in the (001) cubic plane. In cubic symmetry the angular dependent XMLD is a linear combination of two spectra with different photon energy dependence, which reduces to one spectrum when E or H is along a high-symmetry axis. The angular dependent XMLD can be separated into an isotropic term, which is symmetric along H, and an anisotropic term, which depends on the orientation of the crystal axes. The anisotropic term has maximal intensity when E and H have equal but opposite angles with respect to the [100] direction. The Ni{sup 2+} L{sub 2} edge has the peculiarity that the isotropic term vanishes, which means that the maximum in the XMLD intensity is observed not only for E {parallel} H {parallel} [100] but also for (E {parallel} [110], H {parallel} [110]). We apply the angular dependent theory to determine the spin orientation near the Co/NiO(100) interface. The PEEM images show that the ferromagnetic Co moments and antiferromagnetic NiO moments are aligned perpendicular to each other. By rotating the sample with respect to the linear x-ray polarization we furthermore find that the perpendicular coupling with the ferromagnetic Co layer at the interface causes a canting of the antiferromagnetic Ni moments. This shows that taking into account the angular dependence of the XMLD in the detailed analysis of PEEM images leads to an accurate retrieval of the spin axes of the antiferromagnetic domains.

van der Laan, Gerrit; Telling, Neil; Potenza, Alberto; Dhesi, Sarnjeet; Arenholz, Elke

2010-09-26T23:59:59.000Z

420

Improved oxidation sulfidation resistance of Fe-Cr-Ni alloys  

DOE Patents (OSTI)

High temperature resistance of Fe-Cr-Ni alloy compositions to oxidative and/or sulfidative conditions is provided by the incorporation of about 1 to 8 wt % of Zr or Nb and results in a two-phase composition having an alloy matrix as the first phase and a fine grained intermetallic composition as the second phase. The presence and location of the intermetallic composition between grains of the matrix provides mechanical strength, enhanced surface scale adhesion, and resistance to corrosive attack between grains of the alloy matrix at temperatures of 500 to 1000/sup 0/C.

Natesan, K.; Baxter, D.J.

1983-07-26T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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421

Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces  

SciTech Connect

InGaN-based light emitting diodes (LEDs) with a top pattern-nanoporous p-type GaN:Mg surface were fabricated by using a photoelectrochemical (PEC) process. The peak wavelengths of electroluminescence (EL) and operating voltages were measured as 461.2 nm (3.1 V), 459.6 nm (9.2 V), and 460.1 nm (3.3 V) for conventional, nanoporous, and pattern-nanoporous LEDs using 20 mA operation current. The EL spectrum of the nanoporous LED had a larger blueshift phenomenon as a result of a partial compression strain release in the InGaN active layer through the formation of a top nanoporous surface. The light output power had 12.1% and 26.4% enhancements for the nanoporous and the pattern-nanoporous LEDs compared with conventional LEDs. The larger operating voltage of the nanoporous LED was due to the non-ohmic contact on the PEC treated p-type GaN:Mg surface. By using a pattern-nanoporous p-type GaN:Mg structure, the operating voltage of the pattern-nanoporous LED was reduced to 3.3 V. A lower compression strain in the InGaN active layer and a higher light extraction efficiency at the top nanoporous surface were observed in pattern-nanoporous LEDs for higher efficiency nitride-based LED applications.

Yang, C.C.; Lin, C.F.; Lin, C.M.; Chang, C.C.; Chen, K.T.; Chien, J.F.; Chang, C.Y. [Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan (China)

2008-11-17T23:59:59.000Z

422

Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy  

SciTech Connect

The effects of NH{sub 3} flow, group III flux, and substrate growth temperature on indium incorporation and surface morphology have been investigated for bulk InGaN films grown by ammonia molecular beam epitaxy. The incorporation of unintentional impurity elements (H, C, O) in InGaN films was studied as a function of growth temperature for growth on polar (0001) GaN on sapphire templates, nonpolar (1010) bulk GaN, and semipolar (1122), (2021) bulk GaN substrates. Enhanced indium incorporation was observed on both (1010) and (2021) surfaces relative to c-plane, while reduced indium incorporation was observed on (1122) for co-loaded conditions. Indium incorporation was observed to increase with decreasing growth temperature for all planes, while being relatively unaffected by the group III flux rates for a 1:1 Ga:In ratio. Indium incorporation was found to increase at the expense of a decreased growth rate for higher ammonia flows; however, smooth surface morphology was consistently observed for growth on semipolar orientations. Increased concentrations of oxygen and hydrogen were observed on semipolar and nonpolar orientations with a clear trend of increased hydrogen incorporation with indium content.

Browne, David A.; Young, Erin C.; Lang, Jordan R.; Hurni, Christophe A.; Speck, James S. [Materials Department, University of California Santa Barbara, Santa Barbara, California 93106 (United States)

2012-07-15T23:59:59.000Z

423

Local structure and vibrational properties of alpha'-Pu martensitein Ga-stabilized delta-Pu  

Science Conference Proceedings (OSTI)

Extended x-ray absorption fine structure spectroscopy (EXAFS) is used to investigate the local atomic environment and vibrational properties of plutonium and gallium atoms in the {alpha}{prime} and {delta} phases of a mixed phase Pu-Ga alloy. EXAFS results measured at low temperature compare the structure of the mixed phase sample with a single-phase {delta}-Pu sample. EXAFS spectral components attributed to both {alpha}{prime}-Pu and {delta}-Pu were observed in the mixed phase sample. Ga K-edge EXAFS spectra indicate local atomic environments similar to the Pu LIII-edge EXAFS results, which suggests that Ga is substitutional for Pu atoms in both the monoclinic {alpha}{prime}-Pu and the fcc {delta}-Pu structures. In {delta}-Pu, we measure a Ga-Pu bond length contraction of 0.11 Angstroms with respect to the Pu-Pu bond length. The corresponding bond-length contraction around Ga in {alpha}{prime}-Pu is only 0.03 Angstroms. Results from temperature-dependent Pu LIII-edge EXAFS measurements are fit to a correlated Debye model, and a large difference in the Pu-Pu bond Debye temperature is observed for the {alpha}{prime} and {delta} phases: {theta}{sub cD}({alpha}{prime})=159{+-}13 K versus {theta}{sub cD}({delta})=120{+-}3 K. The corresponding analysis for the Ga K EXAFS determines a Ga-Pu bond Debye temperature of {theta}{sub cD}({delta})=188{+-}12 K in the {delta}-Pu phase. These results are related to the observed solubility of Ga in {delta}-Pu, the ''stabilization'' of {delta}-Pu by Ga at room temperature, and the insolubility of Ga in {alpha}{prime}-Pu.

Nelson, E.J.; Blobaum, K.J.M.; Wall, M.A.; Allen, P.G.; Schwartz,A.J.; Booth, C.H.

2003-02-26T23:59:59.000Z

424

GaInAsSb materials for thermophotovoltaics  

DOE Green Energy (OSTI)

Ga{sub 1{minus}x}In{sub x}As{sub 1{minus}y}Sb{sub y} (0.06 < x < 0.2, 0.05 < y < 0.18) epilayers were grown lattice-matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) and molecular beam epitaxy (MBE). For lattice-matched alloys, mirror-like surface morphologies were obtained by both OMVPE and MBE. The 4K photoluminescence (PL) of all layers had a full-width at half-maximum (FWHM) of less than 10 meV for PL peak emission < 1.9 {micro}m. PL FWHM increased to 30 meV for peak emission {approximately}2.12 {micro}m for OMVPE-grown layers. Nominally undoped layers are p-type with typical 300 K hole concentration of {approximately}9 {times} 10{sup 15} cm{sup {minus}3} and hole mobility {approximately}450 to 580 cm{sup 2}/V-s for OMVPE-grown layers, p- and n-type doping is reported for layers grown with either technique. The ideality factor of diode structures is {approximately}2 for both techniques.

Wang, C.A.; Turner, G.W.; Manfra, M.J.; Choi, H.K.; Spears, D.L. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.

1996-12-01T23:59:59.000Z

425

Force Field Development and Molecular Dynamics of [NiFe] Hydrogenase  

Science Conference Proceedings (OSTI)

Classical molecular force-field parameters describing the structure and motion of metal clusters in [NiFe] hydrogenase enzymes can be used to compare the dynamics and thermodynamics of [NiFe] under different oxidation, protonation, and ligation circumstances. Using density functional theory (DFT) calculations of small model clusters representative of the active site and the proximal, medial, and distal Fe/S metal centers and their attached protein side chains, we have calculated classical force-field parameters for [NiFe] in reduced and oxidized states, including internal coordinates, force constants, and atom-centered charges. Derived force constants revealed that cysteinate ligands bound to the metal ions are more flexible in the Ni-B active site, which has a bridging hydroxide ligand, than in the Ni-C active site, which has a bridging hydride. Ten nanosecond all-atom, explicit-solvent MD simulations of [NiFe] hydrogenase in oxidized and reduced catalytic states established the stability of the derived force-field parameters in terms of C{alpha} and metal cluster fluctuations. Average active site structures from the protein MD simulations are consistent with [NiFe] structures from the Protein Data Bank, suggesting that the derived force-field parameters are transferrable to other hydrogenases beyond the structure used for testing. A comparison of experimental H{sub 2}-production rates demonstrated a relationship between cysteinate side chain rotation and activity, justifying the use of a fully dynamic model of [NiFe] metal cluster motion.

Smith, Dayle MA; Xiong, Yijia; Straatsma, TP; Rosso, Kevin M.; Squier, Thomas C.

2012-05-09T23:59:59.000Z

426

A Linear Combination Analyses Approach For Directly Speciating Ni Contaminated Soils.  

E-Print Network (OSTI)

A Linear Combination Analyses Approach For Directly Speciating Ni Contaminated Soils. (S02-trivedi215458-Oral) Abstract: To provide an accurate description of the fate of Ni in aerial- contaminated soils to combine multiple analytical techniques to accurately determine metal speciation in complex soil systems

Sparks, Donald L.

427

Synthesis and characterization of LiNiO2 nanopowder with various chelating agents  

Science Conference Proceedings (OSTI)

LiNiO2 powders were synthesized with acrylic acid, citric acid, oxalic acid, and triethanolamine (TEA) as a chelating agent. Crystallized LiNiO2 was synthesized in air at a calcinations temperature of 500°C for 12 hours, when ...

Mehrdad Balandeh; Sirous Asgari

2010-01-01T23:59:59.000Z

428

Glass Forming Ability in Pr-(Cu, Ni)-Al Alloys  

E-Print Network (OSTI)

Glass forming ability (GFA) in the Pr-rich Pr-(Cu, Ni)-Al alloys at or near the eutectic points was systematically studied. It was found that the GFA in the pseudo-ternary alloys of Pr-(Cu, Ni)-Al is higher than that of ...

Zhang, Yong

429

Mechanochemical synthesis and rapid consolidation of nanocrystalline 3NiAl-Al2O3 composites  

Science Conference Proceedings (OSTI)

Nanopowders of 3NiAl and Al2O3 were synthesized from 3NiO and 5Al powders by high-energy ball milling. Nanocrystalline Al2O3 reinforced composite was consolidated by high-frequency induction-heated sintering ...

In-Jin Shon; In-Yong Ko; Seung-Hoon Jo; Jung-Mann Doh; Jin-Kook Yoon; Sang-Whan Park

2011-01-01T23:59:59.000Z

430

Fabrication and thermoelectric properties of fine-grained TiNiSn compounds  

Science Conference Proceedings (OSTI)

Nearly single-phased TiNiSn half-Heusler compound thermoelectric materials were synthesized by combining mechanical alloying (MA) and spark plasma sintering (SPS) in order to reduce its thermal conductivity by refining the grain sizes. Although TiNiSn compound powders were not synthesized directly via MA, dense bulk samples of TiNiSn compound were obtained by the subsequent SPS treatment. It was found that an excessive Ti addition relative to the TiNiSn stoichiometry is effective in increasing the phase purity of TiNiSn half-Heusler phase in the bulk samples, by compensating for the Ti loss caused by the oxidation of Ti powders and MA processing. The maximum power factor value obtained in the Ti-compensated sample is 1720 muW m{sup -1} K{sup -2} at 685 K. A relatively high ZT value of 0.32 is achieved at 785 K for the present undoped TiNiSn compound polycrystals. - Graphical abstract: Nearly single-phased TiNiSn-based half-Heusler compound polycrystalline materials with fine grains were fabricated by combining mechanical alloying (MA) and spark plasma sintering (SPS). A high ZT value for undoped TiNiSn was obtained because of the reduced thermal conductivity.

Zou Minmin [State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Li Jingfeng, E-mail: jingfeng@mail.tsinghua.edu.c [State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Du Bing; Liu Dawei [State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Kita, Takuji [Advanced Material Engineering Division, Vehicle Engineering Group, Higashifuji Technical Center, Toyota Motor Corporation, 1200, Mishuku, Susono, Shizuoka 410-1193 (Japan)

2009-11-15T23:59:59.000Z

431

Electrodeposition and characterization of nanocrystalline Ni-Mo catalysts for hydrogen production  

Science Conference Proceedings (OSTI)

Ni-Mo nanocrystalline deposits (7-43 nm) with a nodular morphology were prepared by electrodeposition using direct current from citrate-ammonia solutions. They exhibited a single Ni-Mo solid solution phase. The size of the nodules increased as electroplating ...

J. Halim; R. Abdel-Karim; S. El-Raghy; M. Nabil; A. Waheed

2012-01-01T23:59:59.000Z

432

LSCF Synthesis and Syngas Reactivity over LSCF-modified Ni/YSZ Anode.  

E-Print Network (OSTI)

??Simulated coal syngas reactivity over Ni/YSZ and LSCF (La0.6Sr0.4Co0.2Fe0.8)-modified Ni/YSZ anode of SOFC (solid oxide fuel cell) was investigated in this study. The contribution of… (more)

Mirzababaei, Jelvehnaz

2011-01-01T23:59:59.000Z

433

Hydrogen Permeability of Mulitphase V-Ti-Ni Metallic Membranes  

DOE Green Energy (OSTI)

Development of advanced hydrogen separation membranes in support of hydrogen production processes such as coal gasification and as front end gas purifiers for fuel cell based system is paramount to the successful implementation of a national hydrogen economy. Current generation metallic hydrogen separation membranes are based on Pd-alloys. Although the technology has proven successful, at issue is the high cost of palladium. Evaluation of non-noble metal based dense metallic separation membranes is currently receiving national and international attention. The focal point of the reported work was to evaluate a Group 5A-Ta, Nb, V-based alloy with respect to microstructural features and hydrogen permeability. Electrochemical hydrogen permeation testing of the V-Ti-Ni alloy is reported herein and compared to pure Pd measurements recorded as part of this same study. The V-Ti-Ni was demonstrated to have a steady state hydrogen permeation rate an order of magnitude higher than the pure Pd material in testing conducted at 22 C.

Adams, T. M.; Mickalonis, J.

2005-10-18T23:59:59.000Z

434

Direct synthesis of porous NiO nanowall arrays on conductive substrates for supercapacitor application  

Science Conference Proceedings (OSTI)

Porous NiO nanowall arrays (NWAs) grown on flexible Fe-Co-Ni alloy have been successfully synthesized by using nullaginite (Ni{sub 2}(OH){sub 2}CO{sub 3}) as precursor and investigated as supercapacitor electrodes. In details, we adopted a simple hydrothermal method to realize Ni{sub 2}(OH){sub 2}CO{sub 3} NWAs and examined their robust mechanical adhesion to substrate via a long-time ultrasonication test. Porous NiO NWAs were then obtained by a post-calcination towards precursors at 500 {sup o}C in nitrogen atmosphere. Electrochemical properties of as-synthesized NiO NWAs were evaluated by cyclic voltammetry and galvanostatic charge/discharge; porous NiO NWAs electrode delivered a specific capacitance of 270 F/g (0.67 A/g); even at high current densities, the electrode could still deliver a high capacitance up to 236 F/g (13.35 A/g). Meanwhile, it exhibited excellent cycle lifetime with {approx}93% specific capacitance kept after 4000 cycles. These results suggest that as-made porous NiO NWAs electrode is a promising candidate for future thin-film supercapacitors and other microelectronic systems. -- Graphical abstract: Porous NiO nanowall arrays (NWAs) grown on alloy substrate have been made using nullaginite as precursor and studied as supercapacitor electrodes. Porous nanowalls interconnected with each other resulting in the formation of extended-network architectures and exhibited excellent capacitor properties. NiO NWAs electrode delivered a capacitance of 270 F/g (0.67 A/g); even at high current density, the electrode could still deliver a high capacitance up to 236 F/g (13.35 A/g). Besides, it exhibited excellent cycle lifetime with {approx}93% capacitance kept after 4000 cycles. These remarkable results made it possible for mass production of NiO NWAs and future thin-film microelectronic applications. Display Omitted Research highlights: {yields} Large-scale nullaginite (Ni{sub 2}(OH){sub 2}CO{sub 3}) nanowall arrays (NWAs) have been synthesized on flexible alloy substrate by a facile hydrothermal method. {yields} Ultrasonication test has been conducted to demonstrate the robust mechanical adhesion between NWAs and substrate. {yields} As supercapacitor electrodes porous NiO NWAs obtained by a post-calcination towards Ni{sub 2}(OH){sub 2}CO{sub 3} precursors have exhibited excellent electrochemical properties.

Zhu, Jianhui; Jiang, Jian; Liu, Jingping; Ding, Ruimin; Ding, Hao; Feng, Yamin; Wei, Guangming [Institute of Nanoscience and Nanotechnology, Department of Physics, Huazhong Normal University, 430079 Wu Han (China); Huang, Xintang, E-mail: xthuang@phy.ccnu.edu.c [Institute of Nanoscience and Nanotechnology, Department of Physics, Huazhong Normal University, 430079 Wu Han (China)

2011-03-15T23:59:59.000Z

435

[Hydrogen induced C-C, C-N, and C-S bond activities on Pi and Ni surfaces]: Summary  

SciTech Connect

This document summarizes research applied to chemical bond activation studies. Topics summarized include: Carbon nitrogen bonds experimentation with aniline on Ni(111), Mi(100), and Pt(111) surfaces; carbon sulfur bonds experimentation with methanethiol, phenylthiol, and dimethyl disulfide on Pt(111) and Ni(111) surfaces; carbon-carbon bonds experimentation on Ni(100), Ni(111) and Pt(111) surfaces; and in-situ fluorescence yield near edge spectroscopy.

Gland, J.L.

1994-12-31T23:59:59.000Z

436

Hydrothermal synthesis and electrochemical performance of NiO microspheres with different nanoscale building blocks  

SciTech Connect

NiO microspheres were successfully obtained by calcining the Ni(OH){sub 2} precursor, which were synthesized via the hydrothermal reaction of nickel chloride, glucose and ammonia. The products were characterized by TGA, XRD and SEM. The influences of glucose and reaction temperature on the morphologies of NiO samples were investigated. Moreover, the possible growth mechanism for the spherical morphology was proposed. The charge/discharge test showed that the as-prepared NiO microspheres composed of nanoparticles can serve as an ideal electrode material for supercapacitor due to the spherical hollow structure. -- Graphical Abstract: Fig. 5 is the SEM image of NiO that was prepared in the different hydrothermal reaction temperatures. It showed that reaction temperature played a crucial role for the morphology of products.

Wang Ling; Hao Yanjing; Zhao Yan [College of Chemistry, Sichuan University, Chengdu 610064 (China); Lai Qiongyu, E-mail: laiqy5@hotmail.co [College of Chemistry, Sichuan University, Chengdu 610064 (China); Xu Xiaoyun [College of Chemistry, Sichuan University, Chengdu 610064 (China)

2010-11-15T23:59:59.000Z

437

Charge transfer effects in electrocatalytic Ni-C revealed by x-ray photoelectron spectroscopy  

SciTech Connect

Binary Ni-C thin-film alloys, which have been shown to be passive against corrosion in hot sulphuric acid solution whilst also being electrocatalytically active, were investigated by XPS to determine the oxidation state of the metal and carbon components. The Ni component produces a Ni 2p spectrum similar to that of metallic nickel (i.e., no oxidation occurs) but with a 0.3 eV shift to higher binding energy (BE) due to electron donation to the carbon matrix. The C 1s peak shows a shift to lower BE by accepting electrons from the Ni nanocrystals. A cluster-model analysis of the observed Ni 2p spectrum is consistent with the electron transfer from the nickel to the carbon.

Haslam, G. E.; Chin, X.-Y.; Burstein, G. T. [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke St., Cambridge CB2 3QZ (United Kingdom); Sato, K.; Mizokawa, T. [Department of Complexity Science and Engineering, University of Tokyo, 5-1-5 Kashiwanoha, Chiba 277-8651 (Japan)

2012-06-04T23:59:59.000Z

438

Eutectic bonding of a Ti sputter coated, carbon aerogel wafer to a Ni foil  

Science Conference Proceedings (OSTI)

The formation of high energy density, storage devices is achievable using composite material systems. Alternate layering of carbon aerogel wafers and Ni foils with rnicroporous separators is a prospective composite for capacitor applications. An inherent problem exists to form a physical bond between Ni and the porous carbon wafer. The bonding process must be limited to temperatures less than 1000{degrees}C, at which point the aerogel begins to degrade. The advantage of a low temperature eutectic in the Ni-Ti alloy system solves this problem. Ti, a carbide former, is readily adherent as a sputter deposited thin film onto the carbon wafer. A vacuum bonding process is then used to join the Ni foil and Ti coating through eutectic phase formation. The parameters required for successfld bonding are described along with a structural characterization of the Ni foil-carbon aerogel wafer interface.

Jankowski, A.F.; Hayes, J.P.; Kanna, R.L.

1994-06-01T23:59:59.000Z

439

Ga-doped ZnO grown by pulsed laser deposition in H2: the roles of Ga and H  

DOE Green Energy (OSTI)

Highly conductive thin films of ZnO doped with Ga were grown by pulsed-laser deposition (PLD) with 10 mTorr of H2 in the growth chamber. Compared with a more conventional method of producing conductive films of ZnO, i.e., growth in O2 followed by annealing in forming gas (5% H2 in Ar), the H2 method requires no post-growth anneal and also produces higher carrier concentrations and lower resistivities with better depth uniformity. As an example, a 65-nm-thick sample had a room-temperature mobility of 32 cm2/V-s, a concentration of 6.8 x 1020 cm-3, and a resistivity of 2.9 x 10^-4 ohm-cm. From a scattering model, the donor and acceptor concentrations were calculated as 8.9 x 1020 and 2.1 x 10^20 cm-3, respectively, as compared to the Ga and H concentrations of 11 x 10^20 and 1 x 10^20 cm-3. Thus, H does not play a significant role as a donor in this type of ZnO

Look, David; Droubay, Timothy; McCloy, John S.; Zhu, Zihua; Chambers, Scott A.

2011-01-11T23:59:59.000Z

440

Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices  

Science Conference Proceedings (OSTI)

A set of AlGaN/GaN high electron mobility transistor devices has been investigated using step-stress testing, and representative samples of undegraded, source-side-degraded, and drain-side-degraded devices were examined using electron microscopy and microanalysis. An unstressed reference sample was also examined. All tested devices and their corresponding transmission electron microscopy samples originated from the same wafer and thus received nominally identical processing. Step-stressing was performed on each device and the corresponding current voltage characteristics were generated. Degradation in electrical performance, specifically greatly increased gate leakage current, was shown to be correlated with the presence of crystal defects near the gate edges. However, the drain-side-degraded device showed a surface pit on the source side, and another region of the same device showed no evidence of damage. Moreover, significant metal diffusion into the barrier layer from the gate contacts was also observed, as well as thin amorphous oxide layers below the gate metal contacts, even in the unstressed sample. Overall, these observations emphasize that gate-edge defects provide only a partial explanation for device failure.

Johnson, Michael [Arizona State University; Cullen, David A [ORNL; Liu, Lu [University of Florida; Kang, Tsung Sheng [University of Florida, Gainesville; Ren, F. [University of Florida; Chang, C. Y. [University of Florida; Pearton, S. J. [University of Florida; Jang, Soohwan [University of Florida, Gainesville; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Smith, David J [Arizona State University

2012-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Development of FeNiMoB thin film materials for microfabricated magnetoelastic sensors  

Science Conference Proceedings (OSTI)

Metglas{sup TM} 2826MB foils of 25-30 {mu}m thickness with the composition of Fe{sub 40}Ni{sub 38}Mo{sub 4}B{sub 18} have been used for magnetoelastic sensors in various applications over many years. This work is directed at the investigation of {approx}3 {mu}m thick iron-nickel-molybdenum-boron (FeNiMoB) thin films that are intended for integrated microsystems. The films are deposited on Si substrate by co-sputtering of iron-nickel (FeNi), molybdenum (Mo), and boron (B) targets. The results show that dopants of Mo and B can significantly change the microstructure and magnetic properties of FeNi materials. When FeNi is doped with only Mo its crystal structure changes from polycrystalline to amorphous with the increase of dopant concentration; the transition point is found at about 10 at. % of Mo content. A significant change in anisotropic magnetic properties of FeNi is also observed as the Mo dopant level increases. The coercivity of FeNi films doped with Mo decreases to a value less than one third of the value without dopant. Doping the FeNi with B together with Mo considerably decreases the value of coercivity and the out-of-plane magnetic anisotropy properties, and it also greatly changes the microstructure of the material. In addition, doping B to FeNiMo remarkably reduces the remanence of the material. The film material that is fabricated using an optimized process is magnetically as soft as amorphous Metglas{sup TM} 2826MB with a coercivity of less than 40 Am{sup -1}. The findings of this study provide us a better understanding of the effects of the compositions and microstructure of FeNiMoB thin film materials on their magnetic properties.

Liang Cai; Gooneratne, Chinthaka; Cha, Dongkyu; Chen Long; Kosel, Jurgen [Computer Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology, 4700 KAUST, Thuwal 23955 (Saudi Arabia); Gianchandani, Yogesh [Department of Electrical Engineering and Computer Science, 1301 Beal Ave., University of Michigan, Ann Arbor, Michigan 48109 (United States)

2012-12-01T23:59:59.000Z

442

Green chemical transformation of phenolic pollutants using mesoporous NiO nanocrystals with sheet-like morphology  

Science Conference Proceedings (OSTI)

We report the fabrication of hierarchical mesoporous NiO nanocrystals (NCs) with sheet-like morphology via a simple, and eco-friendly hydrothermal method. Mesoporous NiO particles were characterized by small- and wide-angle X-ray diffraction, nitrogen ... Keywords: chemical transformation, mesoporous NiO, nanocatalysts, pollutants

Mohamed Khairy; Sherif A. El-Safty; Mohamed Ismael; M. A. Shenashen

2012-02-01T23:59:59.000Z

443

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 55, NO. 6, DECEMBER 2008 3633 Radiation Effects on InGaN Quantum Wells  

E-Print Network (OSTI)

GaN Quantum Wells and GaN Simultaneously Probed by Ion Beam-Induced Luminescence J. W. Tringe, Member, IEEE, A. Stevens, and C. Wetzel, Member, IEEE Abstract--InGaN quantum well structures on GaN epilayers were exposed of the epilayer and wells. Performance was estimated by the intensity of ion-beam induced luminescence. Two

Wetzel, Christian M.

444

Enhanced quality thin film Cu(In,Ga)Se.sub.2 for semiconductor device applications by vapor-phase recrystallization  

DOE Patents (OSTI)

Enhanced quality thin films of Cu.sub.w (In,Ga.sub.y)Se.sub.z for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu.sub.x Se on a substrate to form a large-grain precursor and then converting the excess Cu.sub.x Se to Cu(In,Ga)Se.sub.2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga).sub.y Se.sub.z. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300.degree.-600.degree. C., where the Cu(In,Ga)Se.sub.2 remains solid, while the excess Cu.sub.x Se is in a liquid flux. The characteristic of the resulting Cu.sub.w (In,Ga).sub.y Se.sub.z can be controlled by the temperature. Higher temperatures, such as 500.degree.-600.degree. C., result in a nearly stoichiometric Cu(In,Ga)Se.sub.2, whereas lower temperatures, such as 300.degree.-400.degree. C., result in a more Cu-poor compound, such as the Cu.sub.z (In,Ga).sub.4 Se.sub.7 phase.

Tuttle, John R. (Denver, CO); Contreras, Miguel A. (Golden, CO); Noufi, Rommel (Golden, CO); Albin, David S. (Denver, CO)

1994-01-01T23:59:59.000Z

445

Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates  

Science Conference Proceedings (OSTI)

The first GaS nanosheet-based photodetectors are demonstrated on both mechanically rigid and flexible substrates. Highly-crystalline, exfoliated GaS nanosheets are promising for optoelectronics due to strong absorption in the UV-visible wavelength region. Photocurrent measurements of GaS nanosheet photodetectors made on SiO2/Si substrates and flexible polyethylene terephthalate (PET) substrates exhibit a photo-responsivity at 254nm up to 4.2 AW-1 and 19.2 AW-1, respectively, which exceeds that of graphene, MoS2, or other 2D materials-based devices. Additionally, the linear dynamic range of the devices on SiO2/Si and PET substrates are 97.7dB and 78.73 dB, respectively. Both surpass that of currently-exploited InGaAs photodetectors (66 dB). Theoretical modeling of the electronic structures indicates that the reduction of the effective mass at the valence band maximum (VBM) with decreasing sheet thickness enhances the carrier mobility of the GaS nanosheets, contributing to the high photocurrents. Double-peak VBMs are theoretically predicted for ultrathin GaS nanosheets (thickness less than 5 monolayers), which is found to promote photon absorption. These theoretical and experimental results show that GaS nanosheets are promising materials for high performance photodetectors on both conventional silicon and flexible substrates.

Hu, Prof Pingan [Harbin Institute of Technology; Wang, Lifeng [Harbin Institute of Technology; Yoon, Mina [ORNL; Zhang, Jia [Harbin Institute of Technology; Feng, Wei [Harbin Institute of Technology; Wang, Xiaona [Harbin Institute of Technology; Wen, Zhenzhong [Harbin Institute of Technology; Idrobo Tapia, Juan C [ORNL; Miyamoto, Yoshiyuki [National Institute of Advanced Industrial Science and Technology, Japan; Geohegan, David B [ORNL; Xiao, Kai [ORNL

2013-01-01T23:59:59.000Z

446

Polarity inversion of N-face GaN using an aluminum oxide interlayer  

Science Conference Proceedings (OSTI)

The polarity of GaN grown by plasma-assisted molecular beam epitaxy was inverted from N-face to Ga-face by inserting a composite AlN/aluminum oxide (AlO{sub x}) interlayer structure at the inversion interface. The change in polarity was verified in situ by reflection high energy electron diffraction via intensity transients and postgrowth surface reconstructions, and ex situ by convergent beam electron diffraction and etch studies in an aqueous potassium hydroxide solution. The inverted materials showed smooth surfaces and good electrical properties. AlGaN/GaN high electron mobility transistors fabricated on the inverted epilayers showed good dc and high frequency performance. A current-gain cutoff frequency (f{sub T}) of 21 GHz and maximum oscillation frequency (f{sub max}) of 61 GHz were measured in devices with a gate length of 0.7 {mu}m. These data compare favorably to those of Ga-face AlGaN/GaN devices with a similar structure grown on Si-face SiC substrates.

Wong, Man Hoi; Mishra, Umesh K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 (United States); Wu, Feng; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

2010-12-15T23:59:59.000Z

447

Thermoelectric properties of epitaxial TbAs:InGaAs nanocomposites  

SciTech Connect

InGaAs lattice-matched to InP was grown by molecular beam epitaxy with randomly distributed TbAs nanoparticles for thermoelectric power generation applications. TbAs:InGaAs is expected to have a large thermoelectric figure of merit, ZT, particularly at high temperatures, owing to energy band alignment between the nanoparticles and their surrounding matrix. Here, the room temperature thermoelectric properties were measured as a function of TbAs concentration, revealing a maximum thermoelectric power factor of 2.38 W/mK{sup 2} and ZT of 0.19 with 0.2% TbAs. Trends in the thermoelectric properties closely resemble those found in comparable ErAs:InGaAs nanocomposite materials. However, nanoparticles were not observed by scanning transmission electron microscopy in the highest ZT TbAs:InGaAs sample, unlike the highest ZT ErAs:InGaAs sample (0.2% ErAs) and two higher concentration TbAs:InGaAs samples examined. Consistent with expectations concerning the positioning of the Fermi level in these materials, ZT was enhanced by TbAs incorporation largely due to a high Seebeck coefficient, whereas ErAs provided InGaAs with higher conductivity but a lower Seebeck coefficient than that of TbAs:InGaAs. Thermal conductivity was reduced significantly from that of intrinsic thin-film InGaAs only with TbAs concentrations greater than {approx}1.7%.

Clinger, Laura E.; Zide, Joshua M. O. [Materials Science and Engineering Department, University of Delaware, Newark, Delaware 19716 (United States); Pernot, Gilles; Shakouri, Ali [Electrical Engineering Department, University of California, Santa Cruz, California 95064 (United States); Buehl, Trevor E.; Burke, Peter G.; Gossard, Arthur C. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Palmstroem, Christopher J. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

2012-05-01T23:59:59.000Z

448

Direct evidence of the fermi-energy-dependent formation of Mn interstitials in modulation doped Ga1-yAlyAs/Ga1-xMnxAs/Ga1-yAlyAs heterostructures  

SciTech Connect

Using ion channeling techniques, we investigate the lattice locations of Mn in Ga{sub 1-x}Mn{sub x}As quantum wells between Be-doped Ga{sub 1-y}Al{sub y}As barriers. The earlier results showed that the Curie temperature T{sub C} depends on the growth sequence of the epitaxial layers. A lower T{sub C} was found in heterostructures in which the Ga{sub 1-x}Mn{sub x}As layer is grown after the modulation-doped barrier. Here we provide direct evidence that this reduction in T{sub C} is directly correlated with an increased formation of magnetically inactive Mn interstitials. The formation of interstitials is induced by a shift of the Fermi energy as a result of the transfer of holes from the barrier to the quantum well during the growth.

Yu, K.M.; Walukiewicz, W.; Wojtowicz, T.; Lim, W.L.; Liu, X.; Dobrowolska, M.; Furdyna, J.K.

2004-01-30T23:59:59.000Z

449

Growth and development of GaInAsP for use in high-efficiency solar cells  

DOE Green Energy (OSTI)

This report describes work done during Phase II of the subcontract. Goals for Phase II include the following: (1) Optimize the GaInAsP cell on GaAs and demonstrate a 500-sun at air mass (AM) 1.5 efficiency of >23%. (2) Develop a window layer, including the evaluation of AlGaAs, GaInP, AlGaAsP, AlGaInP, and GaP. (3) Develop a front-surface contact, with a grid designed for 500-sun concentration, and a goal of a contact resistivity of [approximately]10[sup 5] ohm-cm[sup 2]. (4) Grow GaInAsP cells on Ge, with a goal of a 1-sun (AM 1.5) efficiency of >15%. Accomplishments reported herein include (1) the fabrication of p-on-n and n-on-p GaInAsP cells on GaAs, with the n-on-p cell demonstrating a 10-sun (AM 1.5) active-area efficiency of 23.4% as measured at NREL (2) the evaluation of Al[sub x]Ga([sub 1-x])As, GaInP[sub 2], and AlInP[sub 2] window layers; and (3) the fabrication of GaInAsP cells on Ge, with the demonstration of a p-on-n GaInAsP cell grown on Ge with a 1-sun (AM 1.5) active-area efficiency of 14.4%.

Sharps, P.R. (Research Triangle Inst., Research Triangle Park, NC (United States))

1993-04-01T23:59:59.000Z

450

Ferromagnetism in GaN: Gd: A density functional theory study  

SciTech Connect

First principle calculations of the electronic structure and magnetic interaction of GaN:Gd have been performed within the Generalized Gradient Approximation (GGA) of the density functional theory (DFT) with the on-site Coulomb energy U taken into account (also referred to as GGA+U). The ferromagnetic p-d coupling is found to be over two orders of magnitude larger than the s-d exchange coupling. The experimental colossal magnetic moments and room temperature ferromagnetism in GaN:Gd reported recently are explained by the interaction of Gd 4f spins via p-d coupling involving holes introduced by intrinsic defects such as Ga vacancies.

Stevenson, Cynthia; Stevenson, Cynthia

2008-02-04T23:59:59.000Z

451

Low Cost Production of InGaN for Next-Generation Photovoltaic Devices  

SciTech Connect

The goal of this project is to develop a low-cost and low-energy technology for production of photovoltaic devices based on InGaN materials. This project builds on the ongoing development by Structured Materials Industries (SMI), of novel thin film deposition technology for Group III-Nitride materials, which is capable of depositing Group-III nitride materials at significantly lower costs and significantly lower energy usage compared to conventional deposition techniques. During this project, SMI demonstrated deposition of GaN and InGaN films using metalorganic sources, and demonstrated compatibility of the process with standard substrate materials and hardware components.

Nick M. Sbrockey, Shangzhu Sun, Gary S. Tompa,

2012-07-09T23:59:59.000Z

452

Development of a Multifilament PIT V3Ga Conductor for Fusion Applications  

SciTech Connect

Previous studies on V{sub 3}Ga assert its suitability for use in proposed fusion reactors. V{sub 3}Ga may outperform Nb{sub 3}Sn in a fusion reactor environment based on its relatively flat critical-current profile in the 15 T-20 T range, resilience to applied strain, and reduced risk of induced radioactivity. A multifilament powder-in-tube V{sub 3}Ga conductor was designed, fabricated and tested with a focus on evaluating critical current versus applied field and applied strain performance, wire drawing difficulties, heat-treatment optimization, and overall feasibility of the concept.

Distin, J.S.; Ghosh, A.; Motowidlo, L.R.; Lee, P.J.; Larbalestier, D.C.; Lu, X.F.; Cheggour, N.; Stauffer, T.C.; Goodrich, L.F.

2011-08-03T23:59:59.000Z

453

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1-eV)/GaInAs(0.7-eV) Four-Junction Solar Cell: Preprint  

DOE Green Energy (OSTI)

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga0.5In0.5P/GaAs/Ga0.75In0.25As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga0.75In0.25As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap GaxIn1-xAs fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the GaxIn1-xAs fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-05-01T23:59:59.000Z

454

Low-energy positron diffraction from GaAs(110)  

Science Conference Proceedings (OSTI)

Intensities of 16 beams of near normal incidence positrons have been measured at {ital T}=120 K and analyzed using a multiple scattering model of the low-energy positron diffraction (LEPD) process. Excellent correspondence between the measured and calculated intensities is obtained for a reconstruction that is primarily a bond-length-conserving rotation of the top layer, with As relaxed outward and Ga inward with a tilt angle {omega}{sub 1} = 28.6 {plus minus} 3{degree}, confirming the results of previous structure analyses for this surface. The quality of the description of the measured intensities, as measured by the x-ray {ital R} factor, is significantly better for LEPD than for low-energy electron diffraction. This result is attributed to the repulsive character of the positron-ion core potential and a resulting more surface sensitive diffraction process for LEPD.

Lessor, D.L. (Pacific Northwest Laboratory, K5-17 ISB-1, Richland, Washington 99352 (United States)); Duke, C.B. (Xerox Webster Research Center, 800 Phillips Road, 0114-38D, Webster, New York 14580 (United States)); Chen, X.M.; Brandes, G.R.; Canter, K.F. (Department of Physics, Brandeis University, Waltham, Massachusetts 02254 (United States)); Ford, W.K. (Advanced Materials Center and Department of Physics, Montana State University, Bozeman, Montana 59717 (United States))

1992-07-01T23:59:59.000Z

455

GaN directional couplers for integrated quantum photonics  

SciTech Connect

Large cross-section GaN waveguides are proposed as a suitable architecture to achieve integrated quantum photonic circuits. Directional couplers with this geometry have been designed with aid of the beam propagation method and fabricated using inductively coupled plasma etching. Scanning electron microscopy inspection shows high quality facets for end coupling and a well defined gap between rib pairs in the coupling region. Optical characterization at 800 nm shows single-mode operation and coupling-length-dependent splitting ratios. Two photon interference of degenerate photon pairs has been observed in the directional coupler by measurement of the Hong-Ou-Mandel dip [C. K. Hong, et al., Phys. Rev. Lett. 59, 2044 (1987)] with 96% visibility.

Zhang Yanfeng; McKnight, Loyd; Watson, Ian M.; Gu, Erdan; Calvez, Stephane; Dawson, Martin D. [Institute of Photonics, SUPA, University of Strathclyde, Glasgow G4 0NW (United Kingdom); Engin, Erman; Cryan, Martin J.; Thompson, Mark G.; O'Brien, Jeremy L. [Centre for Quantum Photonics, H. H. Wills Physics Laboratory and Department of Electrical and Electronic Engineering, University of Bristol, Merchant Venturers Building, Woodland Road, Bristol BS8 1UB (United Kingdom)

2011-10-17T23:59:59.000Z

456

Growth of cubic GaN quantum dots  

SciTech Connect

Zinc-blende GaN quantum dots were grown on 3C-AlN(001) by two different methods in a molecular beam epitaxy system. The quantum dots in method A were fabricated by the Stranski-Krastanov growth process. The quantum dots in method B were fabricated by droplet epitaxy, a vapor-liquid-solid process. The density of the quantum dots was controllable in a range of 10{sup 8} cm{sup -2} to 10{sup 12} cm{sup -2}. Reflection high energy electron diffraction analysis confirmed the zinc-blende crystal structure of the QDs. Photoluminescence spectroscopy revealed the optical activity of the QDs, the emission energy was in agreement with the exciton ground state transition energy of theoretical calculations.

Schupp, T.; Lischka, K.; As, D. J. [Universitaet Paderborn, Department Physik, Warburger Str.100, 33095 Paderborn (Germany); Meisch, T.; Neuschl, B.; Feneberg, M.; Thonke, K. [Institut fuer Quantenmaterie, Universitaet Ulm, 89069 Ulm (Germany)

2010-11-01T23:59:59.000Z

457

LBNL-4183E-rev1 N NA AT TU UR RA AL L G GA AS S V VA AR RI  

NLE Websites -- All DOE Office Websites (Extended Search)

4183E-rev1 4183E-rev1 N NA AT TU UR RA AL L G GA AS S V VA AR RI IA AB BI IL LI IT TY Y I IN N C CA AL LI IF FO OR RN NI IA A: : E EN NV VI IR RO ON NM ME EN NT TA AL L I IM MP PA AC CT TS S A AN ND D D DE EV VI IC CE E P PE ER RF FO OR RM MA AN NC CE E E EX XP PE ER RI IM ME EN NT TA AL L E EV VA AL LU UA AT TI IO ON N O OF F I IN NS ST TA AL LL LE ED D C CO OO OK KI IN NG G E EX XH HA AU US ST T F FA AN N P PE ER RF FO OR RM MA AN NC CE E Brett C. Singer, William W. Delp and Michael G. Apte Indoor Environment Department Atmospheric Sciences Department Environmental Energy Technologies Division July 2011 (Revised February 2012) Disclaimer 1 This document was prepared as an account of work sponsored by the United States Government. While this document is believed to contain correct information, neither the United States Government nor any agency thereof, nor The Regents of the University of California, nor any of

458

InGaAs monolithic interconnected modules (MIM)  

DOE Green Energy (OSTI)

A monolithic interconnected module (MIM) structure has been developed for thermophotovoltaic (TPV) applications. The MIM device consists of many individual InGaAs cells series-connected on a single semi-insulating (S.I.) InP substrate. An infrared (IR) back surface reflector (BSR), placed on the rear surface of the substrate, returns the unused portion of the TPV radiator output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Also, the use of a BSR obviates the need to use a separate filtering element. As a result, MIMs are exposed to the entire emitter output, thereby maximizing output power density. MIMs with an active area of 1 x 1-cm were comprised of 15 cells monolithically connected in series. Both lattice-matched and lattice-mismatched InGaAs/InP devices were produced, with bandgaps of 0.74 and 0.55 eV, respectively. The 0.74-eV modules demonstrated an open-circuit voltage (Voc) of 6.158 V and a fill factor of 74.2% at a short-circuit current (Jsc) of 842 mA/cm{sup 2}, under flashlamp testing. The 0.55-eV modules demonstrated a Voc of 4.849 V and a fill factor of 57.8% at a Jsc of 3.87 A/cm{sup 2}. IR reflectance measurements (i.e., {lambda} > 2 {micro}m) of these devices indicated a reflectivity of {ge} 83%. Latest electrical and optical performance results for the MIMs will be presented.

Fatemi, N.S.; Jenkins, P.P.; Weizer, V.G.; Hoffman, R.W. Jr. [Essential Research, Inc., Cleveland, OH (United States); Wilt, D.M.; Scheiman, D.; Brinker, D. [National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center; Murray, C.S.; Riley, D. [Westinghouse Electric Corp., West Mifflin, PA (United States)

1997-12-31T23:59:59.000Z

459

NREL Improves Hole Transport in Sensitized CdS-NiO Nanoparticle Photocathodes (Fact Sheet)  

DOE Green Energy (OSTI)

Significantly improved charge-collection efficiencies result from a general chemical approach to synthesizing photocathodes. It has been reported that a dye-sensitized nickel oxide (NiO) photocathode, when coupled to a dye-sensitized photoanode, could significantly increase overall solar conversion efficiency. However, the conversion efficiencies of these cells are still low. There has been much effort to improve the conversion efficiency by fabricating films with improved properties and developing more effective sensitizing dyes for p-type NiO. One of the factors limiting the use of NiO for solar cell application is the low hole conductivity in p-NiO. A team of researchers from the National Renewable Energy Laboratory (NREL) developed a general chemical approach to synthesize NiO-cadmium sulfide (CdS) core-shell nanoparticle films as photocathodes for p-type semiconductor-sensitized solar cells. Compared to dye-sensitized NiO photocathodes, the CdS-sensitized NiO cathodes exhibited two orders of magnitude faster hole transport (attributable to the passivation of surface traps by the CdS) and almost 100% charge-collection efficiencies.

Not Available

2012-01-01T23:59:59.000Z

460

Carbon-Supported IrNi Core-Shell Nanoparticles: Synthesis Characterization and Catalytic Activity  

Science Conference Proceedings (OSTI)

We synthesized carbon-supported IrNi core-shell nanoparticles by chemical reduction and subsequent thermal annealing in H{sub 2}, and verified the formation of Ir shells on IrNi solid solution alloy cores by various experimental methods. The EXAFS analysis is consistent with the model wherein the IrNi nanoparticles are composed of two-layer Ir shells and IrNi alloy cores. In situ XAS revealed that the Ir shells completely protect Ni atoms in the cores from oxidation or dissolution in an acid electrolyte under elevated potentials. The formation of Ir shell during annealing due to thermal segregation is monitored by time-resolved synchrotron XRD measurements, coupled with Rietveld refinement analyses. The H{sub 2} oxidation activity of the IrNi nanoparticles was found to be higher than that of a commercial Pt/C catalyst. This is predominantly due to Ni-core-induced Ir shell contraction that makes the surface less reactive for IrOH formation, and the resulting more metallic Ir surface becomes more active for H{sub 2} oxidation. This new class of core-shell nanoparticles appears promising for application as hydrogen anode fuel cell electrocatalysts.

K Sasaki; K Kuttiyiel; L Barrio; D Su; A Frenkel; N Marinkovic; D Mahajan; R Adzic

2011-12-31T23:59:59.000Z

Note: This page contains sample records for the topic "ga ni za" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Structural chemistry of some phases in the YC-Ni-B system  

Science Conference Proceedings (OSTI)

NiB, monoclinic Ni{sub 4}B{sub 3}, Ni{sub 2}B and Ni{sub 3}B were prepared by arc-melting and their room-temperature crystal structures were refined by Rietveld analysis of neutron powder diffraction data. The NiB refinement is altogether new data. Although the B atoms in NiB form characteristic zigzag chains, the primary coordination of each atom by atoms of the other kind is similar and distinctively sevenfold, with one short (2.117 {angstrom}), two intermediate (2.152 {angstrom}), and four long (2.163 {angstrom}) bonds. Other samples with stoichiometries (YC)nNi{sub 2}B{sub 2}, n = 3, 4, did not yield single-phase material, but both x-ray and neutron powder diffraction suggest that the n = 4 structure is present in both of these samples. Phase-pure samples of these homologues may require non-stoichiometry and a more controlled thermal history than is attainable by arc melting. To screen samples for superconductivity, ac susceptibility measurements were made using the mutual inductance method with ac signal of 200 Hz.

Chakoumakos, B.C. [Oak Ridge National Lab., TN (United States). Solid State Div.

1994-12-31T23:59:59.000Z

462

Status of vibrational structure in {sup 62}Ni  

Science Conference Proceedings (OSTI)

Measurements consisting of {gamma}-ray excitation functions and angular distributions were performed using the (n,n{sup '{gamma}}) reaction on {sup 62}Ni. The excitation function data allowed us to check the consistency of the placement of transitions in the level scheme. From {gamma}-ray angular distributions, the lifetimes of levels up to {approx}3.8 MeV in excitation energy were extracted with the Doppler-shift attenuation method. The experimentally deduced values of reduced transition probabilities were compared with the predictions of the quadrupole vibrator model and with large-scale shell model calculations in the fp shell configuration space. Two-phonon states were found to exist with some notable deviation from the predictions of the quadrupole vibrator model, but no evidence for the existence of three-phonon states could be established. Z=28 proton core excitations played a major role in understanding the observed structure.

Chakraborty, A.; Orce, J. N.; Ashley, S. F.; Crider, B. P.; Elhami, E.; McEllistrem, M. T.; Mukhopadhyay, S. [Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506-0055 (United States); Brown, B. A. [National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, Michigan 48824 (United States); Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824 (United States); Peters, E. E. [Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506-0055 (United States); Singh, B. [Department of Physics and Astronomy, McMaster University, Hamilton, Ontario, L8S 4M1 (Canada); Yates, S. W. [Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506-0055 (United States); Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506-0055 (United States)

2011-03-15T23:59:59.000Z

463

R10, Synthesis and Charaterization of p-NiO/n-ZnO Heterojunction ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

464

Implications of NiMH Hysteresis on HEV Battery Testing and Performance  

SciTech Connect

Nickel Metal-Hydride (NiMH) is an advanced high-power battery technology that is presently employed in Hybrid Electric Vehicles (HEVs) and is one of several technologies undergoing continuing research and development by FreedomCAR. Unlike some other HEV battery technologies, NiMH exhibits a strong hysteresis effect upon charge and discharge. This hysteresis has a profound impact on the ability to monitor state-of-charge and battery performance. Researchers at the Idaho National Engineering and Environmental Laboratory (INEEL) have been investigating the implications of NiMH hysteresis on HEV battery testing and performance. Experimental results, insights, and recommendations are presented.

Motloch, Chester George; Belt, Jeffrey R; Hunt, Gary Lynn; Ashton, Clair Kirkendall; Murphy, Timothy Collins; Miller, Ted J.; Coates, Calvin; Tataria, H. S.; Lucas, Glenn E.; Duong, T.Q.; Barnes, J.A.; Sutula, Raymond

2002-08-01T23:59:59.000Z

465

Giant Magnetoresistance In Ni/Cu Multilayers Fabricated By Electron-Beam Evaporation  

Science Conference Proceedings (OSTI)

Electron beam evaporation technique has been used to deposit the multilayers of Ni-Cu, represented by Si[BL{sub t}/[Ni(t{sub FM})/Cu(t{sub NM})]xn] where Si is used as a substrate and BL is buffer layer, n is the number of bilayers, t, t{sub FM} and t{sub NM} are thicknesses of buffer layer, ferromagnetic (Ni) and nonmagnetic (Cu) layers, respectively. We characterize the multilayers using M-H curves, magnetoresistance measurement (at room temperature)

Vikram, V.; Rahman, Md. Rizwanur; Katiyar, Monica [Department of Materials and Metallurgical Engineering Indian Institute of Technology Kanpur, Uttar Pradesh, 208016 (India)

2008-04-24T23:59:59.000Z

466

Electrochemical and in situ neutron diffraction investigations of La-Ni-Al-H alloys  

DOE Green Energy (OSTI)

Li/metal hydride batteries are a strong contender to replace Ni/Cd batteries. Since the role of alloying components is not yet understood, a combination of electrochemical and neutron diffraction techniques has been designed to investigate metal hydrides. In this work, several Al-substituted LaNi{sub 5} alloys were investigated for their specific capacity (measured by mAh/La and symbolized by x in LaNi{sub 5-y}Al{sub y}H{sub x}), impedance, and cycling stability. Neutron diffraction was used to study the electrochemically induced phase transformation and structure change during charge/discharge.

Peng, W. [Illinois Institute of Technology (United States); Redey, L.; Vissers, D.R.; Myles, K.M.; Carpenter, J.; Richardson; Burr, G. [Argonne National Lab., IL (United States)

1996-05-01T23:59:59.000Z

467

Phonon densities of states of face-centered-cubic Ni-Fe alloys  

Science Conference Proceedings (OSTI)

Inelastic neutron scattering and nuclear resonant inelastic x-ray scattering were used to determine the phonon densities of states of face-centered-cubic Ni-Fe alloys. Increasing Fe concentration results in an average softening of the phonon modes. Chemical ordering of the Ni0.72Fe0.28 alloy results in a reduction of the partial vibrational entropy of the Fe atoms but does not significantly change the partial vibrational entropy of the Ni atoms. Changes in the phonon densities of states with composition and chemical ordering are discussed and analyzed with a cluster expansion method.

Lucas, Matthew [United States Air Force Research Laboratory, Wright-Patterson Air Force Base] [United States Air Force Research Laboratory, Wright-Patterson Air Force Base; Mauger, L [California Institute of Technology, W. M. Keck Laboratory, Pasadena] [California Institute of Technology, W. M. Keck Laboratory, Pasadena; Munoz, Jorge A. [California Institute of Technology, Pasadena] [California Institute of Technology, Pasadena; Halevy, I [California Institute of Technology, Pasadena] [California Institute of Technology, Pasadena; Horwath, J [United States Air Force Research Laboratory, Wright-Patterson Air Force Base] [United States Air Force Research Laboratory, Wright-Patterson Air Force Base; Semiatin, S L [United States Air Force Research Laboratory, Wright-Patterson Air Force Base] [United States Air Force Research Laboratory, Wright-Patterson Air Force Base; Leontsev, S. O. [University of Kentucky, Lexington] [University of Kentucky, Lexington; Stone, Matthew B [ORNL] [ORNL; Abernathy, Douglas L [ORNL] [ORNL; Xiao, Yuming [Carnegie Institution of Washington] [Carnegie Institution of Washington; Chow, P [HPCAT Geophysical Lab, Argonne, IL] [HPCAT Geophysical Lab, Argonne, IL; Fultz, B. [California Institute of Technology, Pasadena] [California Institute of Technology, Pasadena

2013-01-01T23:59:59.000Z

468

K2, Photoluminescence of Bandgap-Graded InGaN Wires Grown by ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

469

Price of Elba Island, GA Natural Gas LNG Imports from Equatorial...  

Gasoline and Diesel Fuel Update (EIA)

Equatorial Guinea (Dollars per Thousand Cubic Feet) Price of Elba Island, GA Natural Gas LNG Imports from Equatorial Guinea (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1...

470

Price of Elba Island, GA Natural Gas LNG Imports from Nigeria...  

Annual Energy Outlook 2012 (EIA)

Nigeria (Nominal Dollars per Thousand Cubic Feet) Price of Elba Island, GA Natural Gas LNG Imports from Nigeria (Nominal Dollars per Thousand Cubic Feet) Decade Year-0 Year-1...

471

Metalorganic Vapor-Phase Epitaxial Growth and Characterization of Quaternary AlGaInN  

SciTech Connect

In this letter we report the growth (by MOVPE) and characterization of quaternary AlGaInN. A combination of PL, high-resolution XRD, and RBS characterizations enables us to explore and delineate the contours of equil-emission energy and lattice parameters as functions of the quaternary compositions. The observation of room temperature PL emission as short as 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GdnN MQW heterostructures have also been grown; both x-ray diffraction and PL measurement suggest the possibility of incorporating this quaternary into optoelectronic devices.

BANAS, MICHAEL ANTHONY; CRAWFORD, MARY H.; FIGIEL, JEFFREY J.; HAN, JUNG; LEE, STEPHEN R.; MYERS JR., SAMUEL M.; PETERSON, GARY D.

1999-09-27T23:59:59.000Z

472

Correlation of doping, structure, and carrier dynamics in a single GaN nanorod  

E-Print Network (OSTI)

We report the nanoscale optical investigation of a single GaN p-n junction nanorod by cathodoluminescence (CL) in a scanning transmission electron microscope. CL emission characteristic of dopant-related transitions was ...

Zhou, Xiang

473

II2, GaN/AlN Heterostructures on Vertical {111} Fin Facets of Si (110)  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

474

Terahertz waveguide spectroscopy of two-dimensional plasmons in GaAs  

E-Print Network (OSTI)

The electrical characteristics of high-mobility, two-dimensional electron gas (2DEG) systems, such as GaAs quantum wells, have been well-studied at low frequencies and in extreme conditions of high magnetic fields and ...

Harris, C. Thomas (Charles Thomas)

2010-01-01T23:59:59.000Z

475

Millimeter-wave GaN high electron mobility transistors and their integration with silicon electronics  

E-Print Network (OSTI)

In spite of the great progress in performance achieved during the last few years, GaN high electron mobility transistors (HEMTs) still have several important issues to be solved for millimeter-wave (30 ~ 300 GHz) applications. ...

Chung, Jinwook W. (Jinwook Will)

2011-01-01T23:59:59.000Z

476

RF Power Degradation of GaN High Electron Mobility Transistors  

E-Print Network (OSTI)

We have developed a versatile methodology to systematically investigate the RF reliability of GaN High-Electron Mobility Transistors. Our technique utilizes RF and DC figures of merit to diagnose the degradation of RF ...

Joh, Jungwoo

477

G3, Improvement of InGaZnO 4 TFT Device Performance on Glass ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) · I5, Properties of MnAs/GaMnAs/MnAs Magnetic ...

478

Lattice-Matched GaNPAs-On-Silicon Tandem Solar Cells  

DOE Green Energy (OSTI)

A two-junction device consisting of a 1.7-eV GaNPAs junction on a 1.1-eV silicon junction has the theoretical potential to achieve nearly optimal efficiency for a two-junction tandem cell. We have demonstrated a monolithic III-V-on-silicon tandem solar cell in which most of the III-V layers are nearly lattice-matched to the silicon substrate. The cell includes a 1.8 eV GaNPAs top cell, a GaP-based tunnel junction (TJ), and a diffused silicon junction formed during the epitaxial growth of GaNP on the silicon substrate. This tandem on silicon has a Voc of 1.53 V and an AM1.5G efficiency of 5.2% without any antireflection coating. Low currents in the top cell are the primary limitation to higher efficiency at this point.

Geisz, J. F.; Olson, J. M.; Friedman, D. J.; Jones, K. M.; Reedy, R. C.; Romero, M. J.

2005-02-01T23:59:59.000Z

479

Mexico FL GA SC AL MS LA TX AR TN TN  

NLE Websites -- All DOE Office Websites (Extended Search)

2005 Hurricanes on the Natural Gas Industry in the Gulf of Mexico Region Mexico FL GA SC AL MS LA TX AR TN TN Katrina - Cumulative wind > 39 mph Katrina - Cumulative wind > 73 mph...

480

Microsoft Word - gmc GA21 AOCS Report -final 9-10-07.doc  

Science Conference Proceedings (OSTI)

Certified Reference Materials AOCS 0407-A and AOCS 0407-B Report of the certification process for Conventional and Event GA21 Maize (corn) Kernel Certified Reference Materials G. Clapper and R. Cantrill

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481

2013-2014 Student Health Services Health Promotion GA IMPACT Program Instructor  

E-Print Network (OSTI)

schedule. · Ability to conduct research and work on program development2013-2014 Student Health Services ­ Health Promotion GA IMPACT Program Description The IMPACT program seeks to provide students with education and feedback

Tullos, Desiree

482

Anisotropic intermediate valence in Yb2M3Ga9 (M = Rh, Ir)  

SciTech Connect

The intermediate valence compounds Yb{sub 2}M{sub 3}Ga{sub 9} (M = Rh, Ir) exhibit an anisotropic magnetic susceptibility. We report measurements of the temperature dependence of the 4f occupation number, n{sub f}(T), for Yb{sub 2}M{sub 3}Ga{sub 9} as well as the magnetic inelastic neutron scattering spectrum S{sub mag}({Delta}E) at 12 and 300 K for Yb{sub 2}Rh{sub 3}Ga{sub 9}. Both n{sub f}(T) and S{sub mag}({Delta}E) were calculated for the Anderson impurity model with crystal field terms within an approach based on the non-crossing approximation. These results corroborate the importance of crystal field effects in these materials; they also suggest that Anderson lattice effects are important to the physics of Yb{sub 2}M{sub 3}Ga{sub 9}.

Christianson, A.D.; Lawrence, J.M.; Lobos, A.M.; Aligia, A.A.; Bauer, E.D.; Moreno, N.O.; Booth, C.H.; Goremychkin, E.A.; Sarrao, J.L.; Thompson, J.D.; Batista, C.D.; Trouw, F.R.; Hehlen, M.P.

2005-04-26T23:59:59.000Z

483

In situ studies of the effect of silicon on GaN growth modes.  

SciTech Connect

We present real-time X-ray scattering studies of the influence of silicon on the homoepitaxial growth mode of GaN grown by metal-organic vapor-phase epitaxy. Both annealing of Si-doped GaN and surface dosing of GaN with disilane are shown to change the mode of subsequent growth from step-flow to layer-by-layer. By comparing the growth behavior induced by doped layers which have been annealed to that induced by surface dosing, we extract an approximate diffusion coefficient for Si in GaN of 3.5 x 10{sup -18} cm{sup 2}/s at 810{sup o}C.

Munkholm, A.; Stephenson, G. B.; Eastman, J. A.; Auciello, O.; Murty, M. V. R.; Thompson, C.; Fini, P.; Speck, J. S.; DenBaars, S. P.; Northern Illinois Univ.; Univ. of California at Santa Barbara

2000-12-01T23:59:59.000Z

484

Prediction of plasma enhanced deposition process using GA-Optimized GRNN  

Science Conference Proceedings (OSTI)

A genetic algorithm (GA)-based optimization of generalized regression neural network (GRNN) was presented and evaluated with statistically characterized plasma deposition data. The film characteristics to model were deposition rate and positive charge ...

Byungwhan Kim; Dukwoo Lee; Seung Soo Han

2006-05-01T23:59:59.000Z

485

Electroluminescense from InGaN Quantum Dots, in a Monolithically ...  

Science Conference Proceedings (OSTI)

We present an electrically driven structure based on a monolithically GaN/AlInN cavity with a single quantum dot layer grown by MOVPE. The device was grown ...

486

GA 200-500 (VSD): Oil-injected rotary screw compressors, 200 ...  

U.S. Energy Information Administration (EIA)

GA 200-500 (VSD): Oil-injected rotary screw compressors, 200-500 kW / 268-670 hp.,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading air ...