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Note: This page contains sample records for the topic "ga ky ms" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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1

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY...

2

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

0.00-1.99 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 1996 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 1996 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost and Quality of Fuels for Electric Plants," and Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." Note: In 1996, consumption of natural gas for agricultural use

3

Mexico FL GA SC AL MS LA TX AR TN TN  

NLE Websites -- All DOE Office Websites (Extended Search)

2005 Hurricanes on the Natural Gas Industry in the Gulf of Mexico Region Mexico FL GA SC AL MS LA TX AR TN TN Katrina - Cumulative wind > 39 mph Katrina - Cumulative wind > 73 mph...

4

?? / Kagaku / ?? /Ky?ri: Science  

E-Print Network (OSTI)

question when considering science and technology in Japanese?? /Kagaku / ?? /Ky?ri: Science Tsukahara T?go Translationto incorporate and develop science and technology from the

Tsukahara, T?go

2012-01-01T23:59:59.000Z

5

Category:Lexington, KY | Open Energy Information  

Open Energy Info (EERE)

Lexington, KY Lexington, KY Jump to: navigation, search Go Back to PV Economics By Location Media in category "Lexington, KY" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Lexington KY Kentucky Utilities Co.png SVFullServiceRestauran... 65 KB SVHospital Lexington KY Kentucky Utilities Co.png SVHospital Lexington K... 61 KB SVLargeHotel Lexington KY Kentucky Utilities Co.png SVLargeHotel Lexington... 61 KB SVLargeOffice Lexington KY Kentucky Utilities Co.png SVLargeOffice Lexingto... 62 KB SVMediumOffice Lexington KY Kentucky Utilities Co.png SVMediumOffice Lexingt... 64 KB SVMidriseApartment Lexington KY Kentucky Utilities Co.png SVMidriseApartment Lex... 59 KB SVOutPatient Lexington KY Kentucky Utilities Co.png SVOutPatient Lexington...

6

LATA KY WEA-2012-01  

Energy.gov (U.S. Department of Energy (DOE))

The Office of Enforcement and Oversight provided the results of the investigation to LATA KY in a report dated November 21, 2011. An enforcement conference was held on January 18, 2012, with LATA KY representatives to discuss the report findings and associated corrective actions. A summary of the conference is enclosed.

7

Proceedings, World Of Coal Ash, April 11-15, 2005, Lexington, KY, USA Pultrusion of Fabric Reinforced High Flyash  

E-Print Network (OSTI)

Proceedings, World Of Coal Ash, April 11-15, 2005, Lexington, KY, USA Pultrusion of Fabric Reinforced High Flyash Blended Cement Composites Barzin Mobasher(1) , Alva Peled (2) , and Jitendra of elasticity. #12;Proceedings, World Of Coal Ash, April 11-15, 2005, Lexington, KY, USA In addition to ease

Mobasher, Barzin

8

File:USDA-CE-Production-GIFmaps-KY.pdf | Open Energy Information  

Open Energy Info (EERE)

KY.pdf KY.pdf Jump to: navigation, search File File history File usage Kentucky Ethanol Plant Locations Size of this preview: 776 × 600 pixels. Full resolution ‎(1,650 × 1,275 pixels, file size: 387 KB, MIME type: application/pdf) Description Kentucky Ethanol Plant Locations Sources United States Department of Agriculture Related Technologies Biomass, Biofuels, Ethanol Creation Date 2010-01-19 Extent State Countries United States UN Region Northern America States Kentucky External links http://www.nass.usda.gov/Charts_and_Maps/Ethanol_Plants/ File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 16:15, 27 December 2010 Thumbnail for version as of 16:15, 27 December 2010 1,650 × 1,275 (387 KB) MapBot (Talk | contribs) Automated bot upload

9

File:EIA-Appalach7-TN-KY-LIQ.pdf | Open Energy Information  

Open Energy Info (EERE)

Appalach7-TN-KY-LIQ.pdf Appalach7-TN-KY-LIQ.pdf Jump to: navigation, search File File history File usage Appalachian Basin, Kentucky and Tennessee By 2001 Liquids Reserve Class Size of this preview: 463 × 599 pixels. Other resolution: 464 × 600 pixels. Full resolution ‎(5,100 × 6,600 pixels, file size: 19.31 MB, MIME type: application/pdf) Description Appalachian Basin, Kentucky and Tennessee By 2001 Liquids Reserve Class Sources Energy Information Administration Authors Samuel H. Limerick; Lucy Luo; Gary Long; David F. Morehouse; Jack Perrin; Robert F. King Related Technologies Oil, Natural Gas Creation Date 2005-09-01 Extent Regional Countries United States UN Region Northern America States Kentucky, Tennessee File history Click on a date/time to view the file as it appeared at that time.

10

Ga Air Compressor, Ga Air Compressor Products, Ga Air ...  

U.S. Energy Information Administration (EIA)

Ga Air Compressor, You Can Buy Various High Quality Ga Air Compressor Products from Global Ga Air Compressor Suppliers and Ga Air Compressor ...

11

Fractal Location and Anomalous Diffusion Dynamics for Oil Wells from the KY Geological Survey  

E-Print Network (OSTI)

Utilizing data available from the Kentucky Geonet (KYGeonet.ky.gov) the fossil fuel mining locations created by the Kentucky Geological Survey geo-locating oil and gas wells are mapped using ESRI ArcGIS in Kentucky single plain 1602 ft projection. This data was then exported into a spreadsheet showing latitude and longitude for each point to be used for modeling at different scales to determine the fractal dimension of the set. Following the porosity and diffusivity studies of Tarafdar and Roy1 we extract fractal dimensions of the fossil fuel mining locations and search for evidence of scaling laws for the set of deposits. The Levy index is used to determine a match to a statistical mechanically motivated generalized probability function for the wells. This probability distribution corresponds to a solution of a dynamical anomalous diffusion equation of fractional order that describes the Levy paths which can be solved in the diffusion limit by the Fox H function ansatz.

Andrew, Keith; Andrew, Kevin A

2009-01-01T23:59:59.000Z

12

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Gasoline and Diesel Fuel Update (EIA)

accomplishments accomplishments are impressive in themselves, and associ- ated with each milestone is the expansion of future produc- tion opportunities as another technical barrier is overcome. The extension of recovery opportunities into deep water has established the deep offshore as an area of considerable national significance. A second source of increased supply is gas from coalbed formations. Natural gas production from coalbed methane fields continued to grow in 1996 as projects initiated mainly in the early to mid 1990's matured through the dewatering phase into higher rates of gas production. Coalbed forma- tions contribute almost 1 trillion cubic feet, roughly 5 per- cent, to total U.S. production. Continued production growth from coalbeds is not likely in light of the precipitous drop in new wells completed in coalbed formations since the termination of the production tax

13

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA  

Annual Energy Outlook 2012 (EIA)

857, "Monthly Report of Natural Gas Purchases and Deliveries to Consumers." 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 15. Average City Gate Price of Natural...

14

LA-11224-MS  

Office of Scientific and Technical Information (OSTI)

11224-MS 11224-MS UC-66a and UC-70 Issued: March 1988 LA--112 2 4-MS DE88 005902 FEHM: Finite Element Heat and Mass Transfer Code George Zyvoloski Zora Dash Sharad Kelkar DISCLAIMER This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsi- bility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Refer- ence herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recom-

15

LA-10256-MS  

Office of Legacy Management (LM)

10256-MS 10256-MS Los Alamos National Laboratory is operated by the University of California for the United States Department of Energy under contract W-7405-ENG-36. Radiological Survey and Evaluation of the Fallout Area fom the Trinity Test: Chupadera Mesa and White Sands Misile Range, New Mexco - ~ ~S1S' :ts rV T Los Alamos National Laboratory Ly© /.aU U UwHjm ©,Los Alamos, New Mexico 87545 An Affirmative Action/Equal Opportunity Employer Prepared by Kathy Derouin, Group HSE-8 DISCLAIMER This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness,

16

China Ga Air Compressor, China Ga Air Compressor Products ...  

U.S. Energy Information Administration (EIA)

China Ga Air Compressor, China Ga Air Compressor Suppliers and Manufacturers Directory - Source a Large Selection of Ga Air Compressor Products at ...

17

KY_50mwind  

NLE Websites -- All DOE Office Websites (Extended Search)

ataTechnologySpecificUnitedStatesWindHighResolutionKentuckyWindHighResolution.zip> Description: Abstract: Annual average wind resource potential for the state of...

18

M&S methodological challenges  

Science Conference Proceedings (OSTI)

M&S provides a formal way to generate or test existing knowledge. Like mathematics, M&S provides an apparatus for deduction while generating data that can be used for statistical inference. However, unlike mathematics, M&S's formal approach varies from ... Keywords: epistemology, methodology, philosophy

Jose J. Padilla, Andreas Tolk, Saikou Y. Diallo

2013-04-01T23:59:59.000Z

19

Is LA-12152-MS  

Office of Scientific and Technical Information (OSTI)

Is Is LA-12152-MS DE91 016813 A Weibull Brittle Material Failure Model for the ABAQUS Computer Program Joel Bennett L ('r^^r5' /A\ n^rnr?i/'7^(^ '-°s Alamos National Laboratory l y j ^ /AAUCSILI LI U i y j ^ LOS Alamos.New Mexico 87545 ^ _ . * i - DISCLAIMER This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency Thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product,

20

MS, II-J  

Office of Legacy Management (LM)

I' ; ,' I' ; ,' Departm&th of Energy 1 MS, II-J Washington. DC 20585 ' . I I The Honorable John Gallagher ,)fl', /',' ' 103 E. Michigan Avenue .i., ,.' Battle Creek, Michigan 49016 _. Dear Mayor Gallagheri d,---, " '/ approachto openness i.n: with the: public. In (FUSRAP)i.is responsible agencies, determining ~author~ity, performing remedial action to cleanup sites to meet current radiological protection requirements.. A conservative set of technical evaluation guidelines is used in these investigations to assure protection of public health,,~safety and then environment. Where.DQE does not,have .authority for proceeding; the available site information is forwarded to the appropriate Federal or State Agency. DOE studied the historical records of the former Oliver Corp. site, and it

Note: This page contains sample records for the topic "ga ky ms" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Ms. Sharon M. Fiorillo  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Sharon M. Fiorillo Sharon M. Fiorillo 6927 Wilson Street West Mifflin, PA 15122 Dear Ms. Fiorillo: Department of Energy Washington, DC 20585 MAR - 5 2008_ Re: OHA Case No. TBB-0070 This letter concerns the complaint of retaliation that you filed with the Department of Energy (DOE) under 10 C.F.R. Part 708. On August 20, 2007, the Office of Hearings and Appeals (OHA) received your petition for Secretarial review of the July 16, 2007, jurisdictional appeal decision issued by the OHA Acting Director. You filed a statement of arguments in support of your position on September 4, 2007. 'Onder the Part 708 regulations, the Secretary will reverse or revise an appeal decision by the OHA Director only in extraordinary circumstances. 10 C.F.R. § 708.19. The basis of this proceeding is your contention that you made a

22

Workshops: MS&T '04  

Science Conference Proceedings (OSTI)

Sep 26, 2004 ... Office of Legislative and Public Affairs National Science Foundation Ms. Hanson has worked in the media and public affairs business for more...

23

The role of the N*(1535) resonance and the pi^- p --> KY amplitudes in the OZI forbidden pi N --> phi N reaction  

E-Print Network (OSTI)

We study the pi N --> phi N reaction close to the phi N threshold within the chiral unitary approach, by combining the pi^- p --> K^+ Sigma^-, pi^- p --> K^0 Sigma^0 and pi^- p --> K^0 Lambda amplitudes with the coupling of the phi to the K components of the final states of these reactions via quantum loops. We obtain a good agreement with experiment when the dominant pi^- p --> K^0 Lambda amplitude is constrained with its experimental cross section. We also evaluate the coupling of the N*(1535) to phi N and find a moderate coupling as a consequence of partial cancellation of the large KY components of the N*(1535). We also show that the N*(1535) pole approximation is too small to reproduce the measured cross section for the pi N --> phi N reaction.

M. Dring; E. Oset; B. S. Zou

2008-05-13T23:59:59.000Z

24

METLIN: MS/MS metabolite data from the MAGGIE Project  

DOE Data Explorer (OSTI)

METLIN is a metabolite database for metabolomics containing over 50,000 structures, it also represents a data management system designed to assist in a broad array of metabolite research and metabolite identification by providing public access to its repository of current and comprehensive MS/MS metabolite data. An annotated list of known metabolites and their mass, chemical formula, and structure are available on the METLIN website. Each metabolite is conveniently linked to outside resources such as the the Kyoto Encyclopedia of Genes and Genomes (KEGG) for further reference and inquiry. MS/MS data is also available on many of the metabolites. The list is expanding continuously as more metabolite information is being deposited and discovered. [Copied from http://metlin.scripps.edu/]

Metlin is a component of the MAGGIE Project. MAGGIE is funded by the DOE Genomics: GTL and is an acronym for "Molecular Assemblies, Genes, and Genomics Integrated Efficiently."

25

Ba-Ga (Barium - Gallium)  

Science Conference Proceedings (OSTI)

Ba-Ga crystallographic data...Ba-Ga crystallographic data Phase Composition, wt% Ga Pearson symbol Space group (Ba) 0 cI 2 Im m Ba 10 Ga 4.8 cF 176 Fd m Ba 8 Ga 7 30.8 cP 60 P 2 1 3 BaGa 2 50.4 hP 3 P 6/ mmm BaGa 4 67 tI 10 I 4/ mmm (Ga) 100 hP 2 P 6 3 / mmc...

26

LA-5097-MS INFORMAL REPORT  

Office of Legacy Management (LM)

5097-MS 5097-MS INFORMAL REPORT lamos lamos scientific laboratory scientific laboratory of the University of California of the University of California LOS ALAMOS. NEW MEXICO 87544 LOS ALAMOS. NEW MEXICO 87544 Los AIamos Land Areas Environmental Radiation Survey 1972 . In the interest of prompt distribution, this LAMS re port was not edited by the Technical Information staff. Printed in the United States of America. Available from National Technical Information Service U. S. Department of Commerce 5285 Port Royal Road Springfield, Virginia 22151 Price: Printed Copy $3.00; Microfiche $0.95 * ii. : . IOS alamos LA-5097.MS Informal Report UC-41 ISSUED: November 1972 sctentific laboratory of the University of California LOS ALAMO% NEW MEXICO 81544 I L Los Alamos Land Areas

27

Category:Jackson, MS | Open Energy Information  

Open Energy Info (EERE)

MS MS Jump to: navigation, search Go Back to PV Economics By Location Media in category "Jackson, MS" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Jackson MS Entergy Mississippi Inc.png SVFullServiceRestauran... 63 KB SVHospital Jackson MS Entergy Mississippi Inc.png SVHospital Jackson MS ... 74 KB SVLargeHotel Jackson MS Entergy Mississippi Inc.png SVLargeHotel Jackson M... 63 KB SVLargeOffice Jackson MS Entergy Mississippi Inc.png SVLargeOffice Jackson ... 72 KB SVMediumOffice Jackson MS Entergy Mississippi Inc.png SVMediumOffice Jackson... 72 KB SVMidriseApartment Jackson MS Entergy Mississippi Inc.png SVMidriseApartment Jac... 62 KB SVOutPatient Jackson MS Entergy Mississippi Inc.png SVOutPatient Jackson M... 74 KB

28

Ms  

NLE Websites -- All DOE Office Websites (Extended Search)

Bogart provided legal support on issues regarding public contract acquisitions, appropriations law, environmental law, transportation, security and national defense. Since...

29

Ga-Zr (Gallium - Zirconium)  

Science Conference Proceedings (OSTI)

Ga-Zr crystallographic data...Ga 5 Zr 3 44.0 oC 32 Cmcm Ga 3 Zr 2 47 oF 40 Fdd 2 βGaZr 56.7 ? ? αGaZr 56.7 tI 16 I 4 1 / amd Ga 4 Zr 5 62.1 hP 18 P 6 3 / mcm Ga 2 Zr 3 66 tP 10 P 4/ mbm Ga 3 Zr 5 68.6 hP 16 P 6 3 / mcm GaZr 2 72.4 tI 12 I 4/ mcm (βZr) ~94 to 100 cI 2 Im m (αZr) 99.4 to 100 hP 2 P 6 3 / mmc...

30

AlGaN/GaN-based power semiconductor switches  

E-Print Network (OSTI)

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

31

M&S education: practical approach  

Science Conference Proceedings (OSTI)

As M&S work force needs increase, debate continues about what Modeling and Simulation (M&S) education should look like or where it belongs. Many schools are currently taking steps to develop undergraduate programs in M&S. This paper proposes a practical ... Keywords: apprenticeship, courses, technician education, undergraduate education

Irin Hall

2009-03-01T23:59:59.000Z

32

U.S. Energy Information Administration | Annual Energy Outlook...  

Gasoline and Diesel Fuel Update (EIA)

Annual Energy Outlook 2012 Regional maps Figure F6. Coal supply regions WA ID OR CA NV UT TX OK AR MO LA MS AL GA FL TN SC NC KY VA WV WY CO SD ND MI MN WI IL IN OH MD PA NJ DE CT...

33

Gas Prices  

NLE Websites -- All DOE Office Websites (Extended Search)

Prices Gasoline Prices for U.S. Cities Click on the map to view gas prices for cities in your state. AK VT ME NH NH MA MA RI CT CT DC NJ DE DE NY WV VA NC SC FL GA AL MS TN KY IN...

34

C:\\ANNUAL\\VENTCHAP.V8\\NGA.VP  

Gasoline and Diesel Fuel Update (EIA)

4 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99...

35

Microsoft Word - NGAMaster_State_TablesNov12.doc  

Gasoline and Diesel Fuel Update (EIA)

WI NE IA KS MO TX IL IN OH MI OK AR TN WV VA KY MD PA WI NY VT NH MA CT ME RI NJ DC NC SC GA AL MS LA FL HI AK DE 0 2 4 6 8 10 1980 1982 1984 1986 1988 1990 1992 1994 1996 1998...

36

C:\\ANNUAL\\VENTCHAP.V8\\NewNGA02.vp  

Gasoline and Diesel Fuel Update (EIA)

NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK 15. Marketed Production of Natural Gas in the United States, 2001...

37

C:\\ANNUAL\\VENTCHAP.V8\\NGAla1109.vp  

Gasoline and Diesel Fuel Update (EIA)

0 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Sources: Energy...

38

NGA98fin5.vp  

Annual Energy Outlook 2012 (EIA)

NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99...

39

U.S. Energy Information Administration | Annual Energy Outlook...  

Annual Energy Outlook 2012 (EIA)

3 Regional maps Figure F6. Coal supply regions WA ID OR CA NV UT TX OK AR MO LA MS AL GA FL TN SC NC KY VA WV WY CO SD ND MI MN WI IL IN OH MD PA NJ DE CT MA NH VT NY ME RI MT NE...

40

U.S. Energy Information Administration | Annual Energy Outlook...  

Gasoline and Diesel Fuel Update (EIA)

1 Regional maps Figure F4. Oil and gas supply model regions Figure F4. Oil and Gas Supply Model Regions Atlantic WA MT WY ID NV UT CO AZ NM TX OK IA KS MO IL IN KY TN MS AL FL GA...

Note: This page contains sample records for the topic "ga ky ms" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Polarization-engineered GaN/InGaN/GaN tunnel diodes  

E-Print Network (OSTI)

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan

2010-08-24T23:59:59.000Z

42

HDX-MS for Biopharmaceutical Analysis  

Science Conference Proceedings (OSTI)

... Improve HDX-MS technology for measurements of trans-membrane protein drug ... to find the epitope of Proliferating Cell Nuclear Antigen (PCNA ...

2013-09-17T23:59:59.000Z

43

GaN High Power Devices  

SciTech Connect

A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.

PEARTON,S.J.; REN,F.; ZHANG,A.P.; DANG,G.; CAO,X.A.; LEE,K.P.; CHO,H.; GILA,B.P.; JOHNSON,J.W.; MONIER,C.; ABERNATHY,C.R.; HAN,JUNG; BACA,ALBERT G.; CHYI,J.-I.; LEE,C.-M.; NEE,T.-E.; CHUO,C.-C.; CHI,G.C.; CHU,S.N.G.

2000-07-17T23:59:59.000Z

44

Category:Savannah, GA | Open Energy Information  

Open Energy Info (EERE)

Savannah, GA Savannah, GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Savannah, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Savannah GA Georgia Power Co.png SVFullServiceRestauran... 80 KB SVHospital Savannah GA Georgia Power Co.png SVHospital Savannah GA... 80 KB SVLargeHotel Savannah GA Georgia Power Co.png SVLargeHotel Savannah ... 75 KB SVLargeOffice Savannah GA Georgia Power Co.png SVLargeOffice Savannah... 82 KB SVMediumOffice Savannah GA Georgia Power Co.png SVMediumOffice Savanna... 85 KB SVMidriseApartment Savannah GA Georgia Power Co.png SVMidriseApartment Sav... 80 KB SVOutPatient Savannah GA Georgia Power Co.png SVOutPatient Savannah ... 84 KB SVPrimarySchool Savannah GA Georgia Power Co.png

45

Category:Atlanta, GA | Open Energy Information  

Open Energy Info (EERE)

GA GA Jump to: navigation, search Go Back to PV Economics By Location Media in category "Atlanta, GA" The following 16 files are in this category, out of 16 total. SVFullServiceRestaurant Atlanta GA Georgia Power Co.png SVFullServiceRestauran... 81 KB SVHospital Atlanta GA Georgia Power Co.png SVHospital Atlanta GA ... 81 KB SVLargeHotel Atlanta GA Georgia Power Co.png SVLargeHotel Atlanta G... 74 KB SVLargeOffice Atlanta GA Georgia Power Co.png SVLargeOffice Atlanta ... 82 KB SVMediumOffice Atlanta GA Georgia Power Co.png SVMediumOffice Atlanta... 84 KB SVMidriseApartment Atlanta GA Georgia Power Co.png SVMidriseApartment Atl... 82 KB SVOutPatient Atlanta GA Georgia Power Co.png SVOutPatient Atlanta G... 83 KB SVPrimarySchool Atlanta GA Georgia Power Co.png SVPrimarySchool Atlant...

46

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

GA SNC Solar Jump to: navigation, search Name GA-SNC Solar Place Nevada Sector Solar Product Nevada-based PV project developer and joint venture of GA-Solar North America and...

47

Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures  

Science Conference Proceedings (OSTI)

The atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures were studied. It was shown that the deposition of GaAs of the same nominal thickness leads to the formation of pseudomorphic GaAs/GaP quantum wells (QW), fully relaxed GaAs/GaP self-assembled quantum dots (SAQDs), or pseudomorphic GaAsP/GaP SAQDs depending on the growth temperature. We demonstrate that the atomic structure of Ga(As,P)/GaP heterostructures is ruled by the temperature dependence of adatom diffusion rate and GaAs-GaP intermixing. The band alignment of pseudomorphic GaAs/GaP QW and GaAsP/GaP SAQDs is shown to be of type II, in contrast to that of fully relaxed GaAs/GaP SAQDs, which have the band alignment of type I with the lowest electronic states at the indirect L valley of the GaAs conduction band.

Abramkin, D. S.; Putyato, M. A.; Budennyy, S. A.; Gutakovskii, A. K.; Semyagin, B. R.; Preobrazhenskii, V. V.; Shamirzaev, T. S. [A. V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Pr. Lavrentyeva 13, 630090 Novosibirsk (Russian Federation); Kolomys, O. F.; Strelchuk, V. V. [V. E. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, Pr. Nauki 41, 03028 Kiev (Ukraine)

2012-10-15T23:59:59.000Z

48

, 2004, 46, . 1 GaAs/AlGaAs  

E-Print Network (OSTI)

, S. Rumyantsev, J.-Q. L¨u, M.S. Shur, C.A. Saylor, L.C. Brunel. Appl. Phys. Lett. 80, 18, 3433 (2002. L¨u, R. Gaska, M.S. Shur, F. Simin, X. Hu, M. Asif Khan, C.A. Saylor, L.C. Brunel. J. Appl. Phys. 91, , N. Dyakonova , E. Kaminska , A. Piotrowska , K. Golaszewska , M.S. Shur , 603950 , GES

Levelut, Claire

49

Analysis of Carbamate Pesticides: Validation of Semi-Volatile Analysis by HPLC-MS/MS by EPA Method MS666  

Science Conference Proceedings (OSTI)

The Environmental Protection Agency's (EPA) Region 5 Chicago Regional Laboratory (CRL) developed a method for analysis of aldicarb, bromadiolone, carbofuran, oxamyl, and methomyl in water by high performance liquid chromatography tandem mass spectrometry (HPLC-MS/MS), titled Method EPA MS666. This draft standard operating procedure (SOP) was distributed to multiple EPA laboratories and to Lawrence Livermore National Laboratory, which was tasked to serve as a reference laboratory for EPA's Environmental Reference Laboratory Network (ERLN) and to develop and validate analytical procedures. The primary objective of this study was to validate and verify the analytical procedures described in MS666 for analysis of carbamate pesticides in aqueous samples. The gathered data from this validation study will be used to: (1) demonstrate analytical method performance; (2) generate quality control acceptance criteria; and (3) revise the SOP to provide a validated method that would be available for use during a homeland security event. The data contained in this report will be compiled, by EPA CRL, with data generated by other EPA Regional laboratories so that performance metrics of Method EPA MS666 can be determined.

Owens, J; Koester, C

2008-05-14T23:59:59.000Z

50

Analysis of Combustion Chamber Deposits by ESI-TOF-MS and MALDI-TOF-MS  

DOE Green Energy (OSTI)

Combustion chamber deposits (CCDs) in internal combustion engines have been studied by various techniques to understand the relationship of performance degradation with deposit quantity and structure. XPS, XAS, NMR, and elemental analysis have offered insight into the bulk structure of C, H, N, O and metal components [1]. MS has offered some information about compound structure, but results are limited due to the insolubility and complexity of the materials. Recent advances in MS have opened new possibilities for analysis of CCDs. Here we report initial findings on the carbon structure of these deposits determined by ESI-TOF-MS and MADLI-TOF-MS.

Reynolds, J G; Shields, S J; Roos, J W

2001-06-14T23:59:59.000Z

51

General Atomics (GA) Fusion News: A New Spin on Understanding...  

NLE Websites -- All DOE Office Websites (Extended Search)

General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement American Fusion News Category: General Atomics (GA) Link: General Atomics (GA) Fusion News: A New...

52

Rodefeld Landfill Ga Biomass Facility | Open Energy Information  

Open Energy Info (EERE)

Rodefeld Landfill Ga Biomass Facility Jump to: navigation, search Name Rodefeld Landfill Ga Biomass Facility Facility Rodefeld Landfill Ga Sector Biomass Facility Type Landfill Gas...

53

RECIPIENT:Gwinnett Co, GA  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Gwinnett Co, GA Gwinnett Co, GA u.s DEPARUIENT OFENllRGY EERE PROJECT MANAGEMENT CENTER NllPA DETERl\JINATION PROJECr TITLE: Gwinnett Co, GA EEC8G Page I or2 STATE: GA Funding Opportunity Announcement Number Procu~ment Instrument Number N[PA Control Number CID Number DE-EEOOOOS05.005 0 Based on my review ortbe information concerning tbe proposed action, as NEPA Compliance Officer (authorized under DOE Order 4SI.IA), I bave made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 8 5.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical assistance to individuals (such as builders, owners, consultants, designers), organizations (such as utilities), and state

54

Ms. Rebecca Peterson Energy Information Administration  

Gasoline and Diesel Fuel Update (EIA)

Ms. Rebecca Peterson Ms. Rebecca Peterson Energy Information Administration Submitted by email: ERS2014@eia.gov Dear Ms. Peterson: This is to comment on the Energy Information Administration's (EIA) solicitation of comments on the proposed three-year reauthorization of forms EIA-63B, EIA-411, EIA-826, EIA-860, EIA-860M, EIA-861, EIA-861S, and EIA-923, and the creation of form EIA-930. These comments are in response to the notice published in Vol. 78, No. 44 of the Federal Register on March 6, 2013. Omaha Public Power District (OPPD) is a customer-owned electric utility and political subdivision of the state of Nebraska. OPPD is currently a balancing authority and owns a transmission system and

55

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

56

Manahmen fr MS Windows Betriebssysteme Gerd Hofmann  

E-Print Network (OSTI)

Ma?nahmen für MS Windows Betriebssysteme Gerd Hofmann IT-Sicherheitsforum - Betriebssystemsicherheit 24. Juni 2004 #12;24.06.04 gerd.hofmann@rrze.uni-erlangen.de 2Windows Sicherheit Vorstellung Gerd-85-28920 RRZE: Raum RZ 2.013 #12;24.06.04 gerd.hofmann@rrze.uni-erlangen.de 3Windows Sicherheit Inhaltsliste

Fiebig, Peter

57

Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures  

Science Conference Proceedings (OSTI)

GaAsBi/GaAs/AlGaAs separate confinement heterostructures are grown using an asymmetric temperature profile due to the low optimal growth temperature of GaAsBi; the bottom AlGaAs barrier is grown at 610 Degree-Sign C, while the GaAsBi quantum well and the top AlGaAs barrier are grown at 320 Degree-Sign C. Cross-sectional transmission electron microscopy and room temperature photoluminescence measurements indicate that this approach results in samples with excellent structural and optical properties. The high quality of the low temperature AlGaAs barrier is attributed to the presence of Bi on the surface as indicated by a (1 Multiplication-Sign 3) surface reconstruction persisting throughout the low temperature growth.

Fan Dongsheng; Yu Shuiqing [Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Zeng Zhaoquan; Hu Xian; Dorogan, Vitaliy G.; Li Chen; Benamara, Mourad; Hawkridge, Michael E.; Mazur, Yuriy I.; Salamo, Gregory J. [Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States); Johnson, Shane R. [School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287-6206 (United States); Wang, Zhiming M. [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)

2012-10-29T23:59:59.000Z

58

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

DOE Green Energy (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

59

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells  

E-Print Network (OSTI)

Ultraviolet electroabsorption modulator based on AlGaN/GaN multiple quantum wells I. Friel, C online 20 June 2005 An ultraviolet electroabsorption modulator based on AlGaN/GaN quantum wells is demonstrated. Enhanced excitonic absorption in the quantum wells at around 3.48 eV was achieved using

Moustakas, Theodore

60

Self-aligned AlGaN/GaN transistors for sub-mm wave applications  

E-Print Network (OSTI)

This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

Saadat, Omair I

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga ky ms" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

MASIC: a software program for fast quantitation and flexible visualization of chromatographic profiles from detected LC-MS(/MS) features  

SciTech Connect

Quantitative analysis of liquid chromatography (LC)- mass spectrometry (MS) and tandem mass spectrometry (MS/MS) data is essential to many proteomics studies. We have developed MASIC to accurately measure peptide abundances and LC elution times in low-resolution LC-MS/MS analyses. This software program uses an efficient processing algorithm to quickly generate mass specific selected ion chromatograms from a dataset and provides an interactive browser that allows users to examine individual chromatograms in a variety of fashions. The improved elution time estimates afforded by MASIC increase the utility of LC-MS/MS data in the accurate mass and time (AMT) tag approach to proteomics.

Monroe, Matthew E.; Shaw, Jason L.; Daly, Don S.; Adkins, Joshua N.; Smith, Richard D.

2008-06-01T23:59:59.000Z

62

Analysis of Phosphonic Acids: Validation of Semi-Volatile Analysis by HPLC-MS/MS by EPA Method MS999  

DOE Green Energy (OSTI)

The Environmental Protection Agency's (EPA) Region 5 Chicago Regional Laboratory (CRL) developed a method titled Analysis of Diisopropyl Methylphosphonate, Ethyl Hydrogen Dimethylamidophosphate, Isopropyl Methylphosphonic Acid, Methylphosphonic Acid, and Pinacolyl Methylphosphonic Acid in Water by Multiple Reaction Monitoring Liquid Chromatography/Tandem Mass Spectrometry: EPA Version MS999. This draft standard operating procedure (SOP) was distributed to multiple EPA laboratories and to Lawrence Livermore National Laboratory, which was tasked to serve as a reference laboratory for EPA's Environmental Reference Laboratory Network (ERLN) and to develop and validate analytical procedures. The primary objective of this study was to validate and verify the analytical procedures described in EPA Method MS999 for analysis of the listed phosphonic acids and surrogates in aqueous samples. The gathered data from this validation study will be used to: (1) demonstrate analytical method performance; (2) generate quality control acceptance criteria; and (3) revise the SOP to provide a validated method that would be available for use during a homeland security event. The data contained in this report will be compiled, by EPA CRL, with data generated by other EPA Regional laboratories so that performance metrics of EPA Method MS999 can be determined.

Owens, J; Vu, A; Koester, C

2008-10-31T23:59:59.000Z

63

Energy Management Standards (EnMS)  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Management Standards (EnMS) Paul Scheihing U.S. DOE January, 2009 2 Why an Energy Management Standard? Most energy efficiency in industry is achieved through changes in how energy is managed in a facility, rather than through installation of new technologies; An energy management standard provides a method for integrating energy efficiency into existing industrial or commercial management systems for continuous improvement; All existing and planned energy management standards are compatible with ISO 9000/14000 1 ; Companies who have voluntarily adopted an energy management plan (a central feature of an EnMS - Standard) have achieved major energy intensity improvements 2 . 1 International Organization for Standardization (ISO) 2 Btu/lb of product ANSI Accredited U.S. TAG to ISO/PC 242

64

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

Science Conference Proceedings (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

65

Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures  

Science Conference Proceedings (OSTI)

Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

2012-12-24T23:59:59.000Z

66

InGaAsN/GaAs heterojunction for multi-junction solar cells  

DOE Patents (OSTI)

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

2001-01-01T23:59:59.000Z

67

Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)  

SciTech Connect

Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dang Duc Dung [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi (Viet Nam); Vo Thanh Son [Centers for Nanobioenineering and Spintronics, Chungnam National University, Daejon 350-746 (Korea, Republic of)

2012-04-01T23:59:59.000Z

68

Analysis of Combustion Chamber Deposits by ESI-TOF-MS and MALDI-TOF-MS  

DOE Green Energy (OSTI)

Combustion chamber deposits (CCD) in internal combustion engines have been studied by various techniques to understand the relationship of performance degradation with deposit quantity and structure. XPS, XAS, NMR, and elemental analysis have offered insight into the bulk structure of C, H, N, O and metal components. MS has offered some information about compound structure, but results are limited due to the insolubility and complexity of the materials. Recently, we have reported on the metal structure by XPS and XAS of several deposits from a GM 3800 engine generated using a standard fuel and one that contains low levels of the gasoline anti-knock additive, MMT. Here we report the initial findings on the carbon structure of these deposits determined by ESI-TOF-MS and MADLI-TOF-MS.

Reynolds, J G; Shields, S J; Roos, J W

2001-06-14T23:59:59.000Z

69

Educating the workforce: M&S professional education  

Science Conference Proceedings (OSTI)

As Modeling & Simulation (M&S) becomes increasingly important, there is a significant and growing need to educate and train M&S practitioners and researchers. The Department of Defense (DoD) has a growing need for an educated M&S workforce. This need ...

Margaret L. Loper; Amy Henninger; John W. Diem; Mikel D. Petty; Andreas Tolk

2011-12-01T23:59:59.000Z

70

passivation of InGaN/GaN nanopillar light emitting diodes.  

E-Print Network (OSTI)

??Recently, InGaN/GaN based blue light emitting diodes (LEDs) have become widely available commercially, but their efficiency is reduced due to the quantum confined Stark effect (more)

Choi, Won

2013-01-01T23:59:59.000Z

71

Detailed Analysis of Temperature Characteristics of InGaP/InGaAs ...  

Science Conference Proceedings (OSTI)

The current-voltage (I-V) characteristics of single-junction solar cells (InGaP, InGaAs, Ge solar cells) were measured at various temperatures. The structures of ...

72

AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy  

SciTech Connect

The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

C.A. Wang; C.J. Vineis; D.R. Calawa

2002-02-13T23:59:59.000Z

73

GA 30+-90 / GA 37-90 VSD: Oil-injected rotary screw ...  

U.S. Energy Information Administration (EIA)

GA 30+-90 / GA 37-90 VSD: Oil-injected rotary screw compressors, 30-90 kW / 40-125 hp,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading air ...

74

GA 11+-30/GA 15-30 VSD: Oil-injected rotary screw compressors ...  

U.S. Energy Information Administration (EIA)

GA 11+-30/GA 15-30 VSD: Oil-injected rotary screw compressors, 11-30 kW / 15-40 hp,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading air ...

75

GA 90+-160+ / GA 110-160 VSD: Oil-injected rotary screw ...  

U.S. Energy Information Administration (EIA)

GA 90+-160+ / GA 110-160 VSD: Oil-injected rotary screw compressors, 90-160 kW / 125-200 hp.,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading ...

76

Room temperature green light emission from nonpolar cubic InGaN/GaN multi-quantum-wells  

E-Print Network (OSTI)

Room temperature green light emission from nonpolar cubic InGaN/GaN multi-quantum-wells Shunfeng Li Cubic InGaN/GaN multi-quantum-wells MQWs with high structural and optical quality are achieved by utilizing freestanding 3C-SiC 001 substrates and optimizing InGaN quantum well growth. Superlattice peaks up

As, Donat Josef

77

Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT  

Science Conference Proceedings (OSTI)

Growth of wide bandgap material over narrow bandgap material, results into a two dimensional electron gas (2DEG) at the heterointerface due to the conduction band discontinuity. In this paper the 2DEG transport properties of AlGaN/GaN-based high electron mobility transistor (HEMT) is discussed and its effect on various characteristics such as 2DEG density, C-V characteristics and Sheet resistances for different mole fractions are presented. The obtained results are also compared with AlGaAs/GaAs-based HEMT for the same structural parameter as like AlGaN/GaN-based HEMT. The calculated results of electron sheet concentration as a function of the Al mole fraction are in excellent agreement with some experimental data available in the literature.

Lenka, T. R., E-mail: trlenka@gmail.com; Panda, A. K., E-mail: akpanda62@hotmail.com [National Institute of Science and Technology, Palur Hills (India)

2011-05-15T23:59:59.000Z

78

Ms. Leslie Jones ENERGY STAR Program  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

June 6, 2012 June 6, 2012 U.S. Environmental Protection Agency 1200 Pennsylvania Avenue, NW Room62023 Washington, DC 20460 Dear Ms. Jones: On October 28, 2011, the United States Depatiment of Energy (DOE) notified Friedrich Air Conditioning Company (Friedrich) that DOE had completed testing of Friedrich room air conditioner models WS12Cl0 and WS13C30 under the ENERGY STAR Testing Pilot Program and confirmed that these models do not meet the ENERGY STAR energy efficiency requirement of9.4 EER. On November 3, 201 I, DOE notified Friedrich that its room air conditioner model USI2C30 does not meet the ENERGY STAR energy efficiency requirement of9.4 EER. In each notice, DOE gave Friedrich twenty days to provide conclusive manufacturing or design evidence or quality assurance information on why DOE testing showed that these models do not

79

Ms. Leslie Jones ENERGY STAR Program  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

July 7, 2011 July 7, 2011 U.S. Environmental Protection Agency 1200 Pennsylvania Avenue NW Room62023 Washington, DC 20460 Dear Ms. Jones: Electrolux Home Products, Inc. (Electro lux) room air conditioner model FRA256ST2 was selected for testing as part of the U.S. Department of Energy's (DOE) ENERGY STAR® Verification Testing Pilot Program. DOE's initial testing, performed on a unit of this model, indicated that it may not meet ENERGY STAR requirements. After testing three additional units of this model, and finding that each fell short of the minimum standard of9.4 EER, DOE asked Electrolux to provide conclusive manufacturing or design evidence or quality assurance information on why this product should be viewed as meeting the ENERGY STAR Program's energy efficiency

80

Ms. Leslie Jones ENERGY STAR Program  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

December 21,2010 December 21,2010 U.S. Environmental Protection Agency 1200 Pennsylvania Avenue, NW Room 62023 Washington, DC 20460 Dear Ms. Jones: On November 24, 2010, the United States Department of Energy (DOE) notified Haier that DOE had tested the Haier room air conditioner model ESA3087 as part of the ENERGY STAR Testing Pilot Program, and that, according to Stage I testing, this model exceeded allowable ENERGY STAR energy-efficiency requirements by 18 percent. DOE gave Haier until December 3, 2010, to request additional testing or have this matter referred to the United States Environmental Protection Agency (EPA) for disqualification from the ENERGY STAR program. On December 2, Haier notified DOE that it was in the process of voluntarily removing model

Note: This page contains sample records for the topic "ga ky ms" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Ms. Leslie Jones ENERGY STAR Program  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

September 20, 2011 September 20, 2011 U.S. Environmental Protection Agency 1200 Pennsylvania Avenue, NW Room 62023 Washington, DC 20460 Dear Ms. Jones: On March 7, 2011, the United States Depmiment of Energy (DOE) notified Baier America Trading, L.L.C. (Baier) that DOE had completed testing of Baier refrigerator model PRTS21SAC* under the ENERGY STAR Verification Testing Pilot Program and confirmed that the model did not meet ENERGY STAR energy efficiency requirements. DOE gave Baier until March 28, 2011, to provide conclusive manufacturing or design evidence or quality assurance information to rebut DOE testing results, which showed that this product did not meet the ENERGY STAR Program's energy efficiency requirement. Baier responded to DOE in a letter dated March 22, 2011, contending that the results of

82

Quantized states in homogenous polarized GaInN GaN quantum wells  

E-Print Network (OSTI)

Quantized states in homogenous polarized GaInN GaN quantum wells C. Wetzel1, S. Kamiyama1, H. Amano wells is calculated in a single particle model. The act- ing electric eld in the wells and the band gap-dimensional well layers our approach is based on induction from results obtained at the binary GaN barri- ers

Wetzel, Christian M.

83

PIEZOELECTRIC LEVEL SPLITTING IN GaInN/GaN QUANTUM WELLS  

E-Print Network (OSTI)

PIEZOELECTRIC LEVEL SPLITTING IN GaInN/GaN QUANTUM WELLS C. Wetzel, T. Takeuchi, H. Amano, and IInN/GaN multiple quantum well samples in a large set of variable composition a clear correspondence of transitions in photo- and electroreflection, as well as photoluminescence is found. The effective band offset across

Wetzel, Christian M.

84

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells  

E-Print Network (OSTI)

Pulsed optically detected NMR of single GaAs/AlGaAs quantum wells Marcus Eickhoff* and Dieter Suter, nanometer-sized quantum wells possible with excellent sensitivity and selectivity while avoiding.60.-k; 78.55.Cr; 78.67.De Keywords: ODNMR; Pulsed excitation; Quantum well; GaAs 1. Introduction Nuclear

Suter, Dieter

85

Spontaneous emission in GaN/InGaN photonic crystal nanopillars  

E-Print Network (OSTI)

. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

Recanati, Catherine

86

Princeton Plasma Physics Lab - General Atomics (GA)  

NLE Websites -- All DOE Office Websites (Extended Search)

general-atomics-ga General general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http://www.pppl.gov/node/1132

American Fusion News Category: 
ga">General Atomics (GA)
87

TMS P&GA Wired to Washington  

Science Conference Proceedings (OSTI)

P & GA COMMITTEE HOME ... the connection between MSE and such key U.S. initiatives as national security, energy independence, and economic growth.

88

Y2, Threading Defect Elimination in GaN Nanostructures  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

89

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

DOE Green Energy (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

90

Price of Elba Island, GA Liquefied Natural Gas Total Imports...  

Annual Energy Outlook 2012 (EIA)

Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per Thousand Cubic Feet) Price of Elba Island, GA Liquefied Natural Gas Total Imports (Dollars per Thousand Cubic Feet)...

91

Equal Opportunity & Diversity Office WH15 MS117  

NLE Websites -- All DOE Office Websites (Extended Search)

Equal Opportunity & Diversity Office WH15 MS117 Questions & to Volunteer: Samantha Poeppelman x3933 Barb Hehner x 2986 Sandra Charles x 4574 Wednesday & Thursday, November 13 & 14,...

92

LA-9252-MS UC-70a  

Office of Legacy Management (LM)

/p/j ,()i --' /p/j ,()i --' z!- LA-9252-MS UC-70a Issued: May 1982 Environmental Analysis of the Bayo Canyon (TA-10) Site, Los Alamos, New Mexico Roger W. Ferenbaugh Thomas E. Buhl Alan K. Stoker Wayne FL Hansen kos A[am@ Los Alamos,New Mexico 87545 Los Alamos National Laboratory CONTENTS ABSTRACT 1 1.0 INTRODUCTION AND BACKGROUND 1.1 The FUSRAP Program 1.2 Preferred Alternative 2.0 THE BAY0 CANYON SITE 2.1 Summary History and Description of Site 2.1.1 Description of Site 2.1.2 History of Site 2.2 Need for Action 2.2.1 Radiological Risk 2.2.1.1 Method of Estimating Risk 2.2.1.2 Results of Dose Calculations 2.2.1.3 Health Risks from Residual Bayo Canyon Contamination 2.2.2 Criteria upon Which Cleanup Action is Based 2.3 Other Agencies Involved in Implementation of the

93

US SoAtl GA Site Consumption  

Gasoline and Diesel Fuel Update (EIA)

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

94

US SoAtl GA Site Consumption  

U.S. Energy Information Administration (EIA) Indexed Site

GA GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to other states in the South. * Forty-five percent of homes in Georgia were built since 1990, a characteristic typically associated with lower per household consumption. Georgia homes,

95

AlGaAs/GaAs nano-hetero-epitaxy on a patterned GaAs substrate by MBE  

SciTech Connect

An AlGaAs/GaAs resonant tunneling diode (RTD) with submicron size was fabricated on {l_brace}111{r_brace} oblique facets of GaAs with selective MBE. The method is based on the fact that a certain facet structure is formed on a patterned substrate in selective MBE because the growth rate depends strongly on the facet structure. The fabrication of a double-barrier structure was attempted on a {l_brace}111{r_brace}B facet. The current-voltage characteristics of the sample showed negative differential resistance at 77K demonstrating that we have achieved an RTD on a submicron facet.

Nishiwaki, T.; Yamaguchi, M.; Sawaki, N. [Department of Electronics, Nagoya University, Chikusa-ku, Nagoya, 464-8603 (Japan)

2007-04-10T23:59:59.000Z

96

PhD Chemical Engineering MS Chemical Engineering  

E-Print Network (OSTI)

1 PhD Chemical Engineering MS Chemical Engineering Bylaws Gene and Linda Voiland School of ChemicalD Chemical Engineering, MS Chemical Engineering B. Discipline: Edgar, et al.1 provide a succinct description of chemical engineering: "chemical engineers seek to understand, manipulate, and control the molecular basis

Collins, Gary S.

97

Accelerated aging of GaAs concentrator solar cells  

DOE Green Energy (OSTI)

An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

Gregory, P.E.

1982-04-01T23:59:59.000Z

98

Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence  

E-Print Network (OSTI)

Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence October 1997; accepted for publication 5 January 1998 Recombination in single quantum well and multiquantum well InGaN/GaN structures is studied using time-resolved photoluminescence and pulsed

Bowers, John

99

Optical injection and coherent control of a ballistic charge current in GaAsAlGaAs quantum wells  

E-Print Network (OSTI)

Optical injection and coherent control of a ballistic charge current in GaAs?AlGaAs quantum wells of Hache´ et al.,2,3 but in this article we report injection into the plane of GaAs/AlGaAs quantum wells specific to quantum wells. Although we expect the underlying physics of injection and control of currents

Sipe,J. E.

100

Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting  

E-Print Network (OSTI)

of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

Wetzel, Christian M.

Note: This page contains sample records for the topic "ga ky ms" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode Structures  

E-Print Network (OSTI)

Discrete Steps in the Capacitance-Voltage Characteristics of GaInN/GaN Light Emitting Diode and GaInN/GaN heterostructures typically used for high efficiency light emitting diodes is of high materials for green, blue, and UV light emitting diodes (LED) [1-2]. It is known that huge piezoelectric

Wetzel, Christian M.

102

Analysis of Schottky gate electron tunneling in polarization induced AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

( gate=nickel)/(barrier=GaN/Al (y) Ga (1?y) N)/(buffer=GaN)/(substrate=SiC ) polarizationinduced high electron mobility transistors (PI-HEMTs) show promise for ultrahigh power microwave amplification. The polarization fields in these Ga-face

Lester F. Eastman

1999-01-01T23:59:59.000Z

103

GA Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name GA-Solar Place Madrid, Spain Zip 28045 Sector Solar Product Madrid based solar project developer, owned by Spanish industrial group Corporacion Gestamp. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

104

J1, MBE Growth of Metamorphic InGaP on GaAs and GaP for Wide ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

105

AlGaN/GaN high electron mobility transistors based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of SiO2 dielectrics  

Science Conference Proceedings (OSTI)

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) based on InGaN/GaN multi-quantum-well (MQW) structure has been fabricated with SiO"2 dielectric deposited via photo-chemical vapor deposition (PHCVD) using a deuterium lamp ... Keywords: GaN, HEMT, MQW, Photo-chemical vapor deposition, SiO 2

Kai-Hsuan Lee; Ping-Chuan Chang; Shoou-Jinn Chang

2013-04-01T23:59:59.000Z

106

Free carrier accumulation at cubic AlGaN/GaN heterojunctions  

Science Conference Proceedings (OSTI)

Cubic Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructures were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001) substrates. A profile of the electrostatic potential across the cubic-AlGaN/GaN heterojunction was obtained using electron holography in the transmission electron microscope. The experimental potential profile indicates that the unintentionally doped layers show n-type behavior and accumulation of free electrons at the interface with a density of 5.1 x 10{sup 11}/cm{sup 2}, about one order of magnitude less than in wurtzite AlGaN/GaN junctions. A combination of electron holography and cathodoluminescence measurements yields a conduction-to-valence band offset ratio of 5:1 for the cubic AlGaN/GaN interface, which also promotes the electron accumulation. Band diagram simulations show that the donor states in the AlGaN layer provide the positive charges that to a great extent balance the two-dimensional electron gas.

Wei, Q. Y.; Li, T.; Huang, J. Y.; Ponce, F. A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Tschumak, E.; Zado, A.; As, D. J. [Department of Physics, Universitaet Paderborn, D-33098 Paderborn (Germany)

2012-04-02T23:59:59.000Z

107

L1, Formation of Structural Defects in AlGaN/GaN High Electron ...  

Science Conference Proceedings (OSTI)

Transmission electron microscope (TEM) cross sectional image has shown that electrical degradation is closely related to structural damage in the GaN cap and ...

108

Plasma Damage in p-GaN  

SciTech Connect

The effect of Inductively Coupled Plasma H{sub 2} or Ar discharges on the breakdown voltage of p-GaN diodes was measured over a range of ion energies and fluxes. The main effect of plasma exposure is a decrease in net acceptor concentration to depths of 400-550{angstrom}. At high ion fluxes or energies there can be type conversion of the initially p-GaN surface. Post etch annealing at 900 C restores the initial conductivity.

Cao, X.A.; Dang, G.T.; Hickman, R.A.; Pearton, S.J.; Ren, F.; Shul, R.J.; Van Hove, J.M.; Zhang, A.P.; Zhang, L.

1999-06-30T23:59:59.000Z

109

GaTe semiconductor for radiation detection  

SciTech Connect

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

110

Interface contributions to peak broadening in CE-ESI-MS  

SciTech Connect

The applications of capillary electrophoresis (CE) are expanding, and a number of commercial CE instruments are now available. Combining CE with mass spectroscopy (MS), first done with an electrospray ionization (ESI) interface, yields additional advantages. Other interfaces have been proposed, but CE-ESI-MS offers better sensitivity, reduced background, applicability to higher molecular weight (MW) compounds and a better interface design. Our aim has been to exploit the advantages of automated CE coupled to MS for separation of biological materials. Details of our instrument design are provided. Samples used for these studies were a mixture of myoglobin proteins (MW {approximately}17 kilodaltons) and a tryptic digest of tuna cytochrome c. The results show the ESI-MS interface does not broaden bands, and ion dissociation in the mass spectrometer permits the unambiguous identification of fragments in cases where mass alone is insufficient. 2 refs., 2 figs. (MHB)

Udseth, H.R.; Barinaga, C.J.; Smith, R.D. (Pacific Northwest Lab., Richland, WA (USA)); Whitted, W.H. (Beckman Instruments, Inc., Palo Alto, CA (USA))

1991-06-01T23:59:59.000Z

111

Genizah MS T-S AS 152.98  

E-Print Network (OSTI)

Accounts and lists, probably from a notebook. On 1r list of Genesis Parashot, on 2v several names such as Sulaym?n, Sa??d and M?s?, with numerals....

Unknown

2011-02-24T23:59:59.000Z

112

To: Ms. Patrice Brewington From: The Environmental Project  

NLE Websites -- All DOE Office Websites (Extended Search)

To: Ms. Patrice Brewington From: The Environmental Project Re: Quarterly Report (July 1,2005 - September 30,2005) Federal FY 4Q DOE Expenditures: 924,746.60 Summary During FY '05...

113

Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors  

E-Print Network (OSTI)

In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain ...

Lu, Bin

114

Simulation and Design Analysis of (A1Ga)As/GaAs MODFET Integrated Circuits  

Science Conference Proceedings (OSTI)

A new (AlGa)As/GaAs MODFET integrated circuit simulator is described. Our simulator is a customized version of SPICE incorporating the extended charge control model for MODFET's and the velocity saturation model for ungated FET's used as the load devices. ...

Choong H. Hyun; M. S. Shur; N. C. Cirillo

2006-11-01T23:59:59.000Z

115

Nanocrystals cylindrical microcavities exploiting thin-walled InGaAs/GaAs microtubes  

Science Conference Proceedings (OSTI)

This paper relies on the design and fabrication of CdSe/ZnS core/shell colloidal nanocrystals (NCs) cylindrical microcavities for microphotonics applications. The fabrication technology relies on the release of the strain in strained heterostructures, ... Keywords: Colloidal nanocrystals, InGaAs/GaAs microtubes, Strained multilayer

C. Giordano; M. T. Todaro; A. Salhi; L. Martiradonna; I. Viola; A. Passab; L. Carbone; G. Gigli; A. Passaseo; M. De Vittorio

2007-05-01T23:59:59.000Z

116

Two-dimensional electron gas in AlGaN/GaN heterostructures  

Science Conference Proceedings (OSTI)

The formation of a two-dimensional electron gas (2DEG) system by an AlGaN/GaN heterostructure has been further confirmed by measuring its electrical properties. The effect of persistent photoconductivity (PPC) has been observed and its unique features have been utilized to study the properties of 2DEG formed by the AlGaN/GaN heterointerface. Sharp electronic transitions from the first to the second subbands in the 2DEG channel have been observed by monitoring the 2DEG carrier mobility as a function of carrier concentration through the use of PPC. These results are expected to have significant implications on field-effect transistor and high electron mobility transistor applications based on the GaN system. {copyright} {ital 1997 American Vacuum Society.}

Li, J.Z.; Lin, J.Y.; Jiang, H.X. [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)] [Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States); Khan, M.A.; Chen, Q. [APA Optics, Inc., Blaine, Minnesota 55449 (United States)] [APA Optics, Inc., Blaine, Minnesota 55449 (United States)

1997-07-01T23:59:59.000Z

117

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

DOE Green Energy (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

118

Genizah MS T-S AS 146.446  

E-Print Network (OSTI)

Recto: legal document; 1425 of the Seleucid era (= 1114 CE); relating to dowry payments after a divorce; mentions Ezekiel and Ab? ?Umar David b. Yefet. Signed by Abraham b. Shemaya he-?aver descendant of Shemaya Ga?on and Isaac b. Samuel...

Unknown

2011-02-25T23:59:59.000Z

119

MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED  

Science Conference Proceedings (OSTI)

We have grown 2DEG AlGaN/GaN heterostructures by molecular beam epitaxy (MBE) with electron mobilities up to 21500 cm{sup 2}V{sup -1}s{sup -1} at 2 K. In-situ RHEED was applied to optimize different aspects of Ga-rich growth. This paper gives a compact overview of the experimental key aspects that significantly affect the low temperature electron mobility in AlGaN/GaN heterostructures. Growth at the transition towards Ga droplet formation produced the best results. A quantitative analysis of the magnetoresistance confirmes scattering at dislocations as the dominant scattering process at low temperature.

Broxtermann, D.; Sivis, M.; Malindretos, J.; Rizzi, A. [IV. physikalisches Institut, Georg-August-Universitaet Goettingen (Germany)

2012-03-15T23:59:59.000Z

120

Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures  

Science Conference Proceedings (OSTI)

Double pulse doped ({delta}-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm{sup 2}/(V s) at sheet electron densities of 3.00 x 10{sup 12} and 3.36 x 10{sup 12} cm{sup -2}, respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Gladyshev, A. G.; Nikitina, E. V.; Denisov, D. V.; Polyakov, N. K.; Pirogov, E. V.; Gorbazevich, A. A. [Russian Academy of Sciences, St. Petersburg Physics and Technology Center for Research and Education (Russian Federation)

2010-07-15T23:59:59.000Z

Note: This page contains sample records for the topic "ga ky ms" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

GaN Nanopore Arrays: Fabrication and Characterization  

E-Print Network (OSTI)

GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...

Wang, Yadong

122

www.elsevier.com/locate/fuel Trace elements in coal derived liquids: analysis by ICP-MS and  

E-Print Network (OSTI)

Concentrations of trace elements in coal derived liquids have been investigated by inductively coupled plasma-mass spectrometry (ICP-MS) and by Mssbauer spectroscopy. Liquefaction extracts prepared from the Argonne Premium Coals and a coal tar pitch have been examined. Microwave digestion in concentrated nitric acid has been shown as a suitable method for determining trace element concentrations in coal derived liquids by ICP-MSfor sample sizes as small as 320 mg. High concentrations of Fe were found for all extract samples (?2651474 ppm). Ti, Cr, Mn, Co, Ga, Sb, Cs and Ba were measurable. Concentration distributions of trace elements found in the extracts bore little relation to the corresponding distributions in the original coals. The proportions of individual trace elements present in the original coals and found in the extracts, varied widely. Mssbauer spectroscopy of the extracts indicated that the high Fe-concentrations corresponded to the presence of organometallic-Fe compoundsand not to pyritic iron. There is evidence suggesting the presence of material derived from iron-storage proteins such as ferritin, but final proof is lacking. Our data suggest that other metallic ions detected in these coal derived liquids may be present in association with the organic material. Concentrations of paramagnetic metal species were found to be of the same order of magnitude as ESR spin-densities already found in coal liquids. Both types of paramagnetic species are suspected of causing loss of signal in

Mssbauer Spectroscopy; R. Richaud A; H. Lachas A; M. -j. Lazaro A; L. J. Clarke B; K. E. Jarvis B; A. A. Herod A; T. C. Gibb C; R. Kandiyoti A

1999-01-01T23:59:59.000Z

123

GA-AL-SC | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GA-AL-SC GA-AL-SC GA-AL-SC October 1, 2012 ALA-1-N Wholesale Power Rate Schedule Area: PowerSouth Energy Cooperative System: Georgia-Alabama-South Carolina October 1, 2012 Duke-1-E Wholesale Power Rate Schedule Area: Duke On-System System: Georgia-Alabama-South Carolina October 1, 2012 Duke-2-E Wholesale Power Rate Schedule Area: Central System: Georgia-Alabama-South Carolina October 1, 2012 Duke-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina October 1, 2012 Duke-4-E Wholesale Power Rate Schedule Area: Duke Self-Schedulers System: Georgia-Alabama-South Carolina October 1, 2012 MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina October 1, 2012 Pump-1-A Wholesale Power Rate Schedule

124

Magnetoelastic Coupling in NiMnGa Ferromagnetic Shape ...  

Science Conference Proceedings (OSTI)

... Magnetoelastic Coupling in NiMnGa Ferromagnetic Shape Memory Alloys. Peng Zhao (Dept. of Materials Science and ...

125

X-ray Photoelectron Spectroscopy ofGaP_{1-x}N_x Photocorroded as a Result of Hydrogen Productionthrough Water Electrolysis  

DOE Green Energy (OSTI)

Photoelectrochemical (PEC) cells produce hydrogen gas through the sunlight driven electrolysis of water. By extracting hydrogen and oxygen from water and storing solar energy in the H-H bond, they offer a promising renewable energy technology. Addition of dilute amounts of nitrogen to III-V semiconductors has been shown to dramatically increase the stability of these materials for hydrogen production. In an effort to learn more about the origin of semiconductor photocorrosion in PEC cells, three samples of p-type GaP with varying levels of nitrogen content (0%, 0.2%, 2%) were photocorroded and examined by X-ray Photoelectron Spectroscopy (XPS). GaPN samples were observed to be more efficient during the hydrogen production process than the pure GaP samples. Sample surfaces contained gallium oxides in the form of Ga{sub 2}O{sub 3} and Ga(OH){sub 3} and phosphorus oxide (P{sub 2}O{sub 5}), as well as surface oxides from exposure to air. A significant shift in intensity from bulk to surface peaks dramatic nitrogen segregation to the surface during photoelectrochemical hydrogen production. Further investigations, including using a scanning electron microscope to investigate sample topography and inductively coupled plasma mass spectroscopy (ICP-MS) analysis for solution analyses, are under way to determine the mechanism for these changes.

Mayer, Marie A.; /Illinois U., Urbana /SLAC

2006-09-27T23:59:59.000Z

126

Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

Chung, Jinwook W. (Jinwook Will)

2008-01-01T23:59:59.000Z

127

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors  

E-Print Network (OSTI)

We have investigated the surface morphology of electrically stressed AlGaN/GaN high electron mobility transistors using atomic force microscopy and scanning electron microscopy after removing the gate metallization by ...

Makaram, Prashanth

128

Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment  

E-Print Network (OSTI)

Enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are highly desirable for power and digital electronic circuits. Several technologies have been demonstrated in the last few years to fabricate ...

Palacios, Tomas

129

GaN: Defect and Device Issues  

SciTech Connect

The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

1998-11-09T23:59:59.000Z

130

GaAs photoconductive semiconductor switch  

DOE Patents (OSTI)

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

1998-01-01T23:59:59.000Z

131

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+  

E-Print Network (OSTI)

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

McKittrick, Joanna

132

Department of Energy Honors 50 ENERGY STAR Partners that Saved...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Mass.) The Saunders Hotel Group (Boston, Mass.) Servidyne Systems, LLC (Atlanta, Ga.) Toyota Motor Manufacturing North America Inc. (Erlanger, Ky.) Transwestern Commercial...

133

Building and Fire Publications  

Science Conference Proceedings (OSTI)

... (ASHRAE). October 6-8, 1996, Baltimore, MD, ASHRAE, Atlanta, GA, Teichman, KY, Editor(s), 139-150 pp, 1996. Keywords: ...

134

ARM - Participants  

NLE Websites -- All DOE Office Websites (Extended Search)

Delaware, Newark, DE University of Denver, Denver, CO University of Georgia, Athens, GA University of Kentucky, Lexington, KY University of Hawaii at Manoa, Honolulu, HI...

135

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network (OSTI)

Fainman, "Influence of chlorine on etched sidewalls inFainman, Influence of chlorine on etched sidewalls inthe RIBE of GaAs with chlorine (Cl 2 ), ion beam sputtering

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

136

JJ2, Optical Polarization of Non-Polar GaInN/GaN LEDs  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

137

K1, Molecular Beam Epitaxy of Catalyst-Free InGaN/GaN Nanowires ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

138

Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes  

E-Print Network (OSTI)

We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

Cornelius S. Bausch; Aune Koitme; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

2013-05-06T23:59:59.000Z

139

Recent progress in InGaAsSb/GaSb TPV devices  

DOE Green Energy (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

140

GaNPAs Solar Cells Lattice-Matched To GaP: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

Geisz, J. F.; Friedman, D. J.; Kurtz, S.

2002-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga ky ms" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP  

Science Conference Proceedings (OSTI)

We report on the epitaxial growth of an AlSb/InAs heterostructure on a (001) GaP substrate. We investigate the conditions for the most efficient relaxation of GaSb islands on GaP. In particular, we show that the GaP surface treatment and the growth temperature are crucial for the formation of a two-dimensional periodic array of 90 deg. misfit dislocations at the episubstrate interface. With this relaxation process, an AlSb/InAs heterostructure exhibiting a room temperature mobility of 25 500 cm{sup 2} V{sup -1} s{sup -1} on GaP is demonstrated. This result paves the way to the integration of Sb-based devices on Si substrates through the use of GaP/Si templates.

El Kazzi, S.; Desplanque, L.; Coinon, C.; Wallart, X. [Institut d'Electronique, de Microelectronique, et de Nanotechnologie, UMR-CNRS 8520, BP 60069, 59652 Villeneuve d'Ascq Cedex (France); Wang, Y.; Ruterana, P. [CIMAP UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 6, Boulevard du Marechal Juin, 14050 Caen Cedex (France)

2010-11-08T23:59:59.000Z

142

Emerging M&S application in risk management  

Science Conference Proceedings (OSTI)

There has been compelling signs of the great potential of building further synergy with academics, researchers, and industry practitioners from the areas of Modeling and Simulation (M&S) managing risk events. This paper provides an introduction to risk ... Keywords: engineering management, risk analysis, risk assessment, risk management, systems engineering

C. Ariel Pinto; Andreas Tolk; Michael McShane

2011-04-01T23:59:59.000Z

143

(WPI-iCeMS) Pure Nano Drugs*  

E-Print Network (OSTI)

(WPI-iCeMS) SN-38 50 nm * Pure Nano Drugs* SN-38 10 HepG2* JST (-STEP Permeation and Retention (EPR)* EPR 20100 nm SN-38 SN-38 * SN-38 * SN-38 20 SN-38 Pure Nano Drugs

Takada, Shoji

144

Office of Student Services Health Science Campus MS 1026  

E-Print Network (OSTI)

Office of Student Services Health Science Campus MS 1026 Collier Building 4405 3000 Arlington Avenue Toledo, OH 43614-2598 419-383-5810 BSN Consortium Planning Guide Bowling Green State University College of Health & Human Services Nursing Advisor - Health Center Rm. 102 Bowling Green, OH 43403 419

Moore, Paul A.

145

SPE-163690-MS Synthetic, Geomechanical Logs for Marcellus Shale  

E-Print Network (OSTI)

SPE-163690-MS Synthetic, Geomechanical Logs for Marcellus Shale M. O. Eshkalak, SPE, S. D of hydrocarbons from the reservoirs, notably shale, is attributed to realizing the key fundamentals of reservoir and mineralogy is crucial in order to identify the "right" pay-zone intervals for shale gas production. Also

Mohaghegh, Shahab

146

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents (OSTI)

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

147

Dynamics of nuclear polarization in InGaAs quantum dots in a transverse magnetic field  

SciTech Connect

The time-resolved Hanle effect is examined for negatively charged InGaAs/GaAs quantum dots. Experimental data are analyzed by using an original approach to separate behavior of the longitudinal and transverse components of nuclear polarization. This made it possible to determine the rise and decay times of each component of nuclear polarization and their dependence on transverse magnetic field strength. The rise and decay times of the longitudinal component of nuclear polarization (parallel to the applied field) were found to be almost equal (approximately 5 ms). An analysis of the transverse component of nuclear polarization shows that the corresponding rise and decay times differ widely and strongly depend on magnetic field strength, increasing from a few to tens of milliseconds with an applied field between 20 and 100 mT. Current phenomenological models fail to explain the observed behavior of nuclear polarization. To find an explanation, an adequate theory of spin dynamics should be developed for the nuclear spin system of a quantum dot under conditions of strong quadrupole splitting.

Verbin, S. Yu., E-mail: syuv54@mail.ru; Gerlovin, I. Ya.; Ignatiev, I. V., E-mail: ivan_ignatiev@mail.ru; Kuznetsova, M. S.; Cherbunin, R. V. [St. Petersburg State University, Spin Optics Laboratory (Russian Federation); Flisinski, K.; Yakovlev, D. R.; Bayer, M. [Technische Universitaet Dortmund (Germany)

2012-04-15T23:59:59.000Z

148

Growth and photoluminescence of self-catalyzed GaP/GaNP core/shell nanowires on Si(111) by gas source molecular beam epitaxy  

Science Conference Proceedings (OSTI)

We report a study on self-catalyzed GaP/GaNP core/shell nanowires (NWs) grown on Si(111) by gas-source molecular beam epitaxy. Scanning electron microscopy images show that vertical and uniform GaP NWs and GaP/GaNP core/shell NWs are grown on Si(111). The density ranges from {approx}1 x 10{sup 7} to {approx}5 x 10{sup 8} cm{sup -2} across the substrate. Typical diameters are {approx}110 nm for GaP NWs and {approx}220 nm for GaP/GaNP NWs. Room temperature photoluminescence (PL) signal from the GaP/GaNP core/shell NWs confirms that N is incorporated in the shell and the average N content is {approx}0.9%. The PL low-energy tail is significantly reduced, compared to bulk GaNP.

Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Sukrittanon, S. [Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Li, H. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Tu, C. W. [Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2012-01-30T23:59:59.000Z

149

Microsoft Word - MS-OM-1005 NEPA.docx  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

MS-OM-1005 MS-OM-1005 Title: FY 2012 Annual Site Subsidence Surveys Description: Subcontractor shall provide all labor, supervision, materials, equipment, transportation, and services necessary to perform a subsidence survey of the Bayou Choctaw, Big Hill, Bryan Mound and West Hackberry SPR sites. Regulatory Requirements: NEPA Implementing Procedures (10 CFR 1021) 10 CFR 1021.410 (Application of Categorical Exclusions) (a) The actions listed in Appendices A and B of Subpart D are classes of actions that DOE has determined do not individually or cumulatively have a significant effect on the human environment (categorical exclusions). (b) To find that a proposal is categorically excluded, DOE shall determine the following: (1) The proposed action fits within a class of actions that is listed in Appendix A or B of Subpart D;

150

Commander, Naval Base ATTN: Ms. Cheryl Barnett Building N-26  

Office of Legacy Management (LM)

.J>?j 1.2 1990 .J>?j 1.2 1990 Commander, Naval Base ATTN: Ms. Cheryl Barnett Building N-26 Code N 9 E Norfolk, Virginia 23511-6002 Dear Ms. Barnett: I enjoyed speaking with you on the phone. The Department of Energy (DOE) has established its Formerly Utilized Sites Remedial Action Program (FUSRAP) to identify sites formerly utilized by its predecessor agencies in the early days of the nation's atomic energy program and to determine the potential for these sites to contain radiological contamination, related to DOE's past activities, which may require remedial action. When necessary, radiological surveys of individual sites are performed to provide the data necessary to make this necessary determination. As we discussed, in July 1956, the Atomic Energy Commission (a DOE

151

Microsoft Word - MS-OM-1185NEPAHeatExchanger.docx  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

MS-OM-1185 MS-OM-1185 Title: Hydrogen Peroxide Treatment of SPR Heat Exchangers BOA Description: Subcontractor shall provide all labor, supervision, materials, supplies, equipment, tools, and transportation required to treat the water side of the SPR heat exchangers. Work includes providing turnkey chemical injection equipment, chemical (hydrogen peroxide), chemical containment vessels, and fittings/piping/tubing required to connect the chemical injection equipment to the site heat exchangers. Subcontractor shall remove and clean all equipment and properly dispose of any waste materials after the work is completed. Regulatory Requirements: NEPA Implementing Procedures (10 CFR 1021) 10 CFR 1021.410 (Application of Categorical Exclusions) (a) The actions listed in Appendices A and B of Subpart D are classes of actions that DOE has determined do

152

Ms. Kimberly Krizanovic U.S. Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0, 2012 0, 2012 Ms. Kimberly Krizanovic U.S. Department of Energy Office of the Chief Financial Officer 4 th Floor, Suite 4A-236 1000 Independence Avenue Washington, DC 20585 Dear Ms. Krizanovic: The American Institute of Certified Public Accountants (AICPA) is the national, professional association of CPAs, with 369,000 CPA members worldwide in business and industry, public practice, government, education, student affiliates and international associates. It sets ethical standards for the profession and U.S. auditing standards for audits of private companies, nonprofit organizations, federal, state, and local governments. It also develops and grades the Uniform CPA Examination. On behalf of the AICPA and its Governmental Audit Quality Center, we appreciate the

153

CONCURRENC RTG. SYMBOL GC-34 Ms. Mary Beth Brado  

Office of Legacy Management (LM)

MAY 2 9 1980 MAY 2 9 1980 CONCURRENC RTG. SYMBOL GC-34 Ms. Mary Beth Brado "*N'W Town of Lewiston * i..,! 1375 Ridge Road ^r'8 Lewiston, New York 14092 RTG.SYuBOL Dear Ms. Brado: .- ,l13. INirIA Lss iQ. W'Mott This is in response to your letter of January 29, 1980, and subsequent ..... ,. telephone discussions with irr. Brazley of my office, concerning land use 5/ /8 restrictions on the 1,511 acres declared surplus in the Towns of Lewiston RGSYMOL. and Porter, New York. In regard to your question of land use restriction and its application to the surplus land in the Lewiston area, our Office of General Counsel deter- DATE'- mined that the Department of Energy does not have the authority to restrict any land use or development of the property in question. Such authority nrTG SYMOL

154

Ms. Katharine Kaplan ENERGY STAR Product Development USEPA Headquarters  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

7, 2010 7, 2010 Ms. Katharine Kaplan ENERGY STAR Product Development USEPA Headquarters 1200 Pennsylvania Avenue, NW (6202J) Washington , DC 20460 Dear Ms. Kaplan: On May 7, 2010, the United States Department of Energy (DOE) notified ASKO Appliances, Inc. that DOE had tested ASKO dishwasher model D5122XXLB as part of the ENERGY STAR Verification Testing Pilot Program , and that, according to DOE's testing, this model exceeded allowable ENERGY STAR efficiency requirements by 12 percent. DOE gave ASKO until May 17, 2010 to request additional testing or have this matter referred to the United States Environmental Protection Agency (EPA). ASKO has not requested testing of additional units by the DOE deadline. On May 12, ASKO sent an email to DOE disputing DOE's testing and providing their own test reports for the model

155

Method for factor analysis of GC/MS data  

Science Conference Proceedings (OSTI)

The method of the present invention provides a fast, robust, and automated multivariate statistical analysis of gas chromatography/mass spectroscopy (GC/MS) data sets. The method can involve systematic elimination of undesired, saturated peak masses to yield data that follow a linear, additive model. The cleaned data can then be subjected to a combination of PCA and orthogonal factor rotation followed by refinement with MCR-ALS to yield highly interpretable results.

Van Benthem, Mark H; Kotula, Paul G; Keenan, Michael R

2012-09-11T23:59:59.000Z

156

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations  

E-Print Network (OSTI)

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, GaP, or (Al,Ga)As, which opens a wide area of possibilities for optimizing the host composition towards higher ferromagnetic Curie temperatures. Here we explore theoretically hole-mediated ferromagnetism and Mn incorporation in Ga(As,P) and (Al,Ga)As ternary hosts. While alloying (Ga,Mn)As with Al has only a small effect on the Curie temperature we predict a sizable enhancement of Curie temperatures in the smaller lattice constant Ga(As,P) hosts. Mn-doped Ga(As,P) is also favorable, as compared to (Al,Ga)As, with respect to the formation of carrier and moment compensating interstitial Mn impurities. In (Ga,Mn) (As,P) we find a marked decrease of the partial concentration of these detrimental impurities with increasing P content.

Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

157

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates  

E-Print Network (OSTI)

5221, 34095 Montpellier, France E-mail: pmc53@cam.ac.uk Received October 12, 2012; accepted November 22, 2012; published online May 20, 2013 This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various...

Corfdir, Pierre; Dussaigne, Amlie; Teisseyre, Henryk; Suski, Tadeusz; Grzegory, Izabella; Lefebvre, Pierre; Giraud, Etienne; Shahmohammadi, Mehran; Phillips, Richard; Ganire, Jean-Daniel; Grandjean, Nicolas; Deveaud, Benot

158

Growth orientation dependent photoluminescence of GaAsN alloys  

SciTech Connect

We report photoluminescence (PL) studies of both as-grown and electron-irradiated GaAsN epilayers on (311)A/B and (100) GaAs substrates. A long room-temperature (RT) PL lifetime, as well as an enhanced N incorporation, is observed in (311)B GaAsN epilayers as compared with (311)A and (100) samples. There is no direct correlation between the RT PL lifetime and the emission intensity from Ga vacancy complex detected at low temperature. The lifetime damage coefficient is relatively low for (311)B GaAsN. The irradiation-induced nonradiative recombination defects are suggested to be N- and/or As-related according to a geometrical analysis based on the tetrahedral coordination of GaAsN crystal.

Han, Xiuxun; Tanaka, Tomohiro; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan); Sato, Shinichiro [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)

2012-01-16T23:59:59.000Z

159

Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

1998-10-14T23:59:59.000Z

160

Growth and Fabrication of GaN/AlGaN Heterojunction Bipolar Transistor  

SciTech Connect

A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si Doping in the emitter and collector regions was grown by Metal Organic Chemical Vapor Deposition in c-axis Al(2)O(3). Secondary Ion Mass Spectrometry measurements showed no increase in the O concentration (2-3x10(18) cm(-3)) in the AlGaN emitter and fairly low levels of C (~4-5x10(17) cm (-3)) throughout the structure. Due to the non-ohmic behavior of the base contact at room temperature, the current gain of large area (~90 um diameter) devices was <3. Increasing the device operating temperature led to higher ionization fractions of the mg acceptors in the base, and current gains of ~10 were obtained at 300 degree C.

Abernathy, C.R.; Baca, A.G.; Cao, X.A.; Cho, H.; Dang, G.T.; Donovan, S.M.; Han, J.; Jung, K.B.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Wilson, R.G.; Zhang, A.P.; Zhang, L

1999-03-16T23:59:59.000Z

Note: This page contains sample records for the topic "ga ky ms" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

A InGaN/GaN quantum dot green ({lambda}=524 nm) laser  

SciTech Connect

The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab [Department of Electrical Engineering and Computer Science, Center for Nanoscale Photonics and Spintronics, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2011-05-30T23:59:59.000Z

162

Evaluation of defects and degradation in GaAs-GaAlAs wafers using transmission cathodoluminescence  

Science Conference Proceedings (OSTI)

A large number of GaAs substrates GaAlAs double-heterostructure (DH) wafers, and high-radiance GaAlAs DH light-emitting diodes (LEDS) were evaluated using transmission cathodoluminescence (TCL). We show that only epitaxial wafers with a high defect density as revealed by TCL readily develop dark line defects (DLDs) with current injection, optical excitation, or electron beam excitation. Furthermore, in agreement with the previous work, the electron-beam-induced DLDs originate at dislocations and their growth requires minority-carrier injection. Based on these results, it is inferred that TCL can serve as a nondestructive screening technique for the selection of materials that produces a high yield of reliable LEDs.

Chin, A.K.; Keramidas, V.G.; Johnston, W.D. Jr.; Mahajan, S.; Roccasecca, D.D.

1980-02-01T23:59:59.000Z

163

GaInSb and GaInAsSb thermophotovoltaic device fabrication and characterization  

DOE Green Energy (OSTI)

Thermophotovoltaic (TPV) devices have been fabricated using epitaxial ternary and quaternary layers grown on GaSb substrates. The GaInSb layers were grown by organometallic vapor phase epitaxy (OMVPE) and the InGaAsSb lattice-matched layers were grown by liquid phase epitaxy (LPE). Device fabrication steps include unannealed p-type ohmic contacts, annealed Sn/Au n-type ohmic contacts, and a thick Ag top-surface contact using a lift-off process. Devices are characterized primarily by dark I-V, photo I-V, and quantum efficiency measurements, which are correlated to microscopic and macroscopic material properties. Particular emphasis has been on material enhancements to increase quantum efficiency and decrease dark saturation current density. TPV device performance is presently limited by the base diffusion length, typically 1 to 2 microns.

Hitchcock, C.; Gutmann, R.; Borrego, J.; Ehsani, H.; Bhat, I. [Rensselaer Polytechnic Inst., Troy, NY (United States); Freeman, M.; Charache, G. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

164

Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells  

Science Conference Proceedings (OSTI)

The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

Baidus, N. V. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation); Vainberg, V. V. [National Academy of Sciences of Ukraine, Institute of Physics (Ukraine); Zvonkov, B. N. [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation); Pylypchuk, A. S., E-mail: pylypchuk@iop.kiev.ua; Poroshin, V. N.; Sarbey, O. G. [National Academy of Sciences of Ukraine, Institute of Physics (Ukraine)

2012-05-15T23:59:59.000Z

165

U.S. Energy Information Administration | Annual Energy Outlook 2011  

Gasoline and Diesel Fuel Update (EIA)

1 1 Regional maps Figure F6. Coal supply regions Figure F6. Coal Supply Regions WA ID OR CA NV UT TX OK AR MO LA MS AL GA FL TN SC NC KY VA WV WY CO SD ND MI MN WI IL IN OH MD PA NJ DE CT MA NH VT NY ME RI MT NE IA KS MI AZ NM 500 0 SCALE IN MILES APPALACHIA Northern Appalachia Central Appalachia Southern Appalachia INTERIOR NORTHERN GREAT PLAINS Eastern Interior Western Interior Gulf Lignite Dakota Lignite Western Montana Wyoming, Northern Powder River Basin Wyoming, Southern Powder River Basin Western Wyoming OTHER WEST Rocky Mountain Southwest Northwest KY AK 1000 0 SCALE IN MILES Source: U.S. Energy Information Administration, Office

166

Radiation Hard AlGaN Detectors and Imager  

Science Conference Proceedings (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

167

InGaAs and Ge MOSFETs with high ? dielectrics  

Science Conference Proceedings (OSTI)

InGaAs and Ge MOSFETs with high @k's are now the leading candidates for technology beyond the 15nm node CMOS. The UHV-Al"2O"3/Ga"2O"3(Gd"2O"3) [GGO]/InGaAs has low electrical leakage current densities, C-V characteristics with low interfacial densities ... Keywords: Atomic layer deposition, Germanium, High ? dielectrics, III-V Compound semiconductor, MOSFETs, Molecular beam epitaxy

W. C. Lee; P. Chang; T. D. Lin; L. K. Chu; H. C. Chiu; J. Kwo; M. Hong

2011-04-01T23:59:59.000Z

168

Automated Dispersive Solid Phase Extraction of Pesticide Residues in Botanicals using Triple Quadrupole LC/MS/MS  

E-Print Network (OSTI)

in 12.5 min; hold for 3 min MS conditions Drying gas temp: 225°C Sheath gas temp: 325°C Gas flow rate: 8 L/min Sheath gas flow: 10 L/min Nebulizer pressure: 40 psi EMV: 400 V Capillary voltage: 4000 V was then centrifuged at 5,000 x rpm for 3min ·Acetonitrile (1 ml) extract was transferred to a 2 ml auto-sampler vial

Heller, Barbara

169

Atomistic Modeling of Thermodynamic Properties of Pu-Ga Alloys ...  

Science Conference Proceedings (OSTI)

Atomistic Modeling of Thermodynamic Properties of Pu-Ga Alloys Based on the ... Resources for the Selection and Use of Interatomic Potentials in Atomistic...

170

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

contractors supported the dismantlement including asbestos removal and concrete cutting, electrical, and HVAC. Project support functions were provided by GA organizations...

171

Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 {mu}m  

Science Conference Proceedings (OSTI)

Highly strained InGaAs:Bi quantum wells (QWs) were grown on (001)-oriented GaAs substrates by molecular beam epitaxy (MBE). Photoluminescence (PL) reveals strong improvements in the optical properties evidenced by 10 times enhancement in PL intensity and extended emission wavelength up to 1.29 {mu}m when Bi is introduced to InGaAs/GaAs QWs. The improved optical quality results from the Bi surfactant effect as well as the Bi incorporation. Post growth thermal annealing shows that Bi atoms in InGaAs/GaAs QWs do not show good thermal stability at 650 Degree-Sign C and tend to diffuse out of the QWs resulting in large wavelength blue-shifts.

Ye Hong; Song Yuxin; Wang Shumin [Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg SE-41296 (Sweden); Gu Yi [Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

2012-12-15T23:59:59.000Z

172

Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots  

Science Conference Proceedings (OSTI)

In this work, we demonstrate the dependence of the nitrogen incorporation on the Ga/In content into (In,Ga)(As,N) quantum dots (QDs) grown on GaAs (100) by radio-frequency plasma assisted molecular beam epitaxy (MBE). Morphological analysis by atomic force microscopy and cross-sectional transmission electron microscopy, together with an estimation of the transition thickness, monitored in situ during the growth, predict a maximum in the N incorporation for 30% Ga content. This result is confirmed by photoluminescence measurements of the as-grown and post-growth annealed samples. We attribute this behavior to a trade off between two mechanisms depending on the Ga/In content: one related to the stability of the Ga-N bond, and the other related to the surface strain and/or In segregation.

Gargallo-Caballero, R.; Guzman, A.; Ulloa, J. M.; Hierro, A. [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM)-Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain); Hopkinson, M. [Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom); Luna, E.; Trampert, A. [Paul Drude Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2012-04-15T23:59:59.000Z

173

Bulk growth of GaSb and Ga{sub 1{minus}x}In{sub x}Sb  

DOE Green Energy (OSTI)

GaSb and InGaSb have been demonstrated to be suitable choices for high efficiency thermophotovoltaic (TPV) cells. Synthesis and growth of bulk GaSb single crystals and GaInSb polycrystals have been carried out by the vertical Bridgman technique, with a baffle immersed in the melt and by complete encapsulation of the melt by low melting temperature alkali halides or oxides. The critical roles of the baffle and the encapsulation are discussed. Efforts in obtaining device grade GaSb with superior structural and electrical properties and compositionally homogeneous GaInSb are described, emphasizing the key steps in the growth cycle developed to obtain good crystalline quality.

Dutta, P.S.; Ostrogorsky, A.G.; Gutmann, R.J.

1997-05-01T23:59:59.000Z

174

P8, Fabrication of Subwavelength Pillar Arrays on GaAs by Confined ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

175

II4, Compositionally-Graded Layers Composed of Tandem InGaAs ...  

Science Conference Proceedings (OSTI)

The specification of the 6 miscut is important because it provides step ..... of Metamorphic InGaP on GaAs and GaP for Wide-Bandgap Photovoltaic Junctions.

176

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN Shi You, Theeradetch Detchprohm, Mingwei Zhu  

E-Print Network (OSTI)

Highly Polarized Green Light Emitting Diode in m-Axis GaInN/GaN Shi You, Theeradetch Detchprohm in nonpolar light-emitting diodes (LEDs) covering the blue to green spectral range. In photo- luminescence, m's overall power efficiency. Linearly polarized light can be efficiently generated in GaInN/GaN-based light-emitting

Wetzel, Christian M.

177

An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell  

DOE Green Energy (OSTI)

This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

Venkatasubramanian, R. (Research Triangle Inst., Research Triangle Park, NC (United States))

1993-01-01T23:59:59.000Z

178

Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor  

Science Conference Proceedings (OSTI)

Keywords: Ga vacancies, GaN growth, gas feeding method, optical property, rapid thermal chemical vapor deposition (RTCVD), yellow luminescence

Sun Jung Kim; Young Hun Seo; Kee Suk Nahm; Yun Bong Hahn; Hyun Wook Shim; Eun-Kyung Suh; Kee Young Lim; Hyung Jae Lee

1999-08-01T23:59:59.000Z

179

Lipid Analysis and Lipidomics: New Techniques & ApplicationChapter 4 LC/MS and Chiral Separation  

Science Conference Proceedings (OSTI)

Lipid Analysis and Lipidomics: New Techniques & Application Chapter 4 LC/MS and Chiral Separation Methods and Analyses eChapters Methods - Analyses Books AOCS Press Downloadable pdf of Chapter 4 LC/MS and Chiral S

180

Lipid Analysis and Lipidomics: New Techniques & ApplicationChapter 5 LC/MS and Lipid Oxidation  

Science Conference Proceedings (OSTI)

Lipid Analysis and Lipidomics: New Techniques & Application Chapter 5 LC/MS and Lipid Oxidation Methods and Analyses eChapters Methods - Analyses Books Downloadable pdf of Chapter 5 LC/MS and Lipid Oxidation from

Note: This page contains sample records for the topic "ga ky ms" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Minfang Yeh  

NLE Websites -- All DOE Office Websites (Extended Search)

(SFE) in Nuclear Waste Reprocessing. Curriculum Vitae Education Ph.D in Chemistry, University of Kentucky, Lexington, KY. M.S. in Chemistry, Eastern Michigan University,...

182

Sensitive Femtogram Determination of Aflatoxins B1, B2, G1, and G2 in Food Matrices using Tandem LC-MS/MS  

E-Print Network (OSTI)

(%) 0 95 5 5 0 100 6 0 100 MS conditions Drying gas temp: 325°C Sheath gas temp: 350°C Gas flow rate: 10 L/min Sheath gas flow: 11 L/min Nebulizer pressure: 50 psi EMV: 400 V Capillary voltage: 4000 V sample was then centrifuged at 14,000 x g for 3min prior to LC-MS/MS analysis. ·Each food matrix

Heller, Barbara

183

Functional Imprinting Structures on GaN-Based Light-Emitting ...  

Science Conference Proceedings (OSTI)

Keywords: GaN, light-emitting diode (LED), imprinting technology, far-field pattern modulation, light extraction. 1. Introduction. GaN-based light-emitting diodes...

184

Genizah MS T-S AS 145.39  

E-Print Network (OSTI)

*k T-S AS 145.39 *t Legal document *s 15.3 x 15.5 (7.7 one leaf); 4-15 lines (1v and 2r blank) *m Paper; 2 leaves (bifolium); slightly torn, holes, rubbed, stained *l Judaeo-Arabic; Hebrew; Arabic *c Testimony concerning an oath; mentions M?s? ibn... H?r?n al-?m? and Faraj Allah ibn Joseph ibn F??il. *e 4 lines on f. 2v written transversely in f. 1r....

Unknown

2011-02-25T23:59:59.000Z

185

Intro Inlets & Sizing TOFMS Other MS LDI AMS CIMS Conc. 2012 AAAR Conference  

E-Print Network (OSTI)

Intro Inlets & Sizing TOFMS Other MS LDI AMS CIMS Conc. 2012 AAAR Conference Minneapolis, MN://cires.colorado.edu/jimenez/ams.html 1 Intro Inlets & Sizing TOFMS Other MS LDI AMS CIMS Conc. Outline 1. Building Blocks ­ Inlets (see references) 2 #12;Intro Inlets & Sizing TOFMS Other MS LDI AMS CIMS Conc. Why Aerosol Mass

Colorado at Boulder, University of

186

Delta M(s) in the MSSM with large tan beta  

E-Print Network (OSTI)

The Bs-Bsbar mixing parameter Delta Ms is studied in the MSSM with large tan beta. The recent Tevatron measurement of Delta Ms is used to constrain the MSSM parameter space. From this analysis the often neglected contribution to Delta Ms from the operator Q^SLL is found to be significant.

Parry, J K

2006-01-01T23:59:59.000Z

187

Teaching OR/MS to MBAs at Warwick Business School: A Turnaround Story  

Science Conference Proceedings (OSTI)

OR/MS is under pressure in MBA programs in the United Kingdom as it is in the United States. To ensure its continuance, members of the operational research group at Warwick Business School redesigned the core OR/MS module. The first attempt at a redesign ... Keywords: Professional: or/ms education.

Stewart Robinson; Maureen Meadows; John Mingers; Frances A. O'Brien; Estelle A. Shale; Stephanie Stray

2003-03-01T23:59:59.000Z

188

Bonding and gap states at GaAs-oxide interfaces  

Science Conference Proceedings (OSTI)

The nature of bonding and possible causes of Fermi level pinning at high mobility-high dielectric constant oxide GaAs:HfO"2 interfaces are discussed. It is argued that these are atoms with defective bonding, rather than states due to the bulk semiconductor ... Keywords: GaAs, bonding, interface

John Robertson; Liang Lin

2011-04-01T23:59:59.000Z

189

Elastic properties of Pu metal and Pu-Ga alloys  

Science Conference Proceedings (OSTI)

We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

2010-01-05T23:59:59.000Z

190

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Structural and Geographic Characteristics of Homes in South Region, Divisions, and States, 2009" 0 Structural and Geographic Characteristics of Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" "Structural and Geographic Characteristics",,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" ,,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX"

191

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Computers and Other Electronics in Homes in South Region, Divisions, and States, 2009" 0 Computers and Other Electronics in Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Computers and Other Electronics",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX"

192

Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well  

E-Print Network (OSTI)

be applicable to light sources in fiber-optic communication systems.13 However, there have been no reports intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

Jalali. Bahram

193

Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells  

E-Print Network (OSTI)

Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells J. Schörmann,a S and multiple quantum wells. The well widths ranged from 2.5 to 7.5 nm. Samples were grown by rf-plasma assisted wells clear reflection high energy electron diffraction oscillations were observed indicating a two

As, Donat Josef

194

High Breakdown ( > \\hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology  

E-Print Network (OSTI)

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si ...

Lu, Bin

195

Development of high power green light emitting diode dies in piezoelectric GaInN/GaN  

E-Print Network (OSTI)

Development of high power green light emitting diode dies in piezoelectric GaInN/GaN Christian in green light emitting diodes is one of the big challenges towards all-solid- state lighting. The prime,3], and commercialization [4,5] of high brightness light emitting diodes LEDs has led to a 1.82 Billion-$/year world market

Detchprohm, Theeradetch

196

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes  

E-Print Network (OSTI)

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

Wetzel, Christian M.

197

Hidrofobikumo ?taka daikli? sorbcijai vilnos pluote ir daini? fizikin?ms savyb?ms.  

E-Print Network (OSTI)

??Baigiamojo darbo tikslas itirti vilnos pluoto paviriaus hidrofobikumo ?tak? daikli? sorbcijai vilnos pluote ir daini? fizikin?ms savyb?ms. Nauj? antrachinonini? daikli? RB 5-37 M?lynojo ir (more)

Gr?bli?nait?,; Egl?

2011-01-01T23:59:59.000Z

198

Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells  

Science Conference Proceedings (OSTI)

We investigate the incorporation of nitrogen into (Ga,In)Sb grown on GaSb and report room temperature photoluminescence from GaInSb(N) quantum wells. X-ray diffraction and channeling nuclear reaction analysis, together with Rutherford backscattering, were employed to identify the optimal molecular beam epitaxial growth conditions that minimized the incorporation of non-substitutional nitrogen into GaNSb. Consistent with this hypothesis, GaInSb(N) quantum wells grown under the conditions that minimized non-substitutional nitrogen exhibited room temperature photoluminescence, indicative of significantly improved radiative efficiency. Further development of this material system could enable type-I laser diodes emitting throughout the (3-5 {mu}m) wavelength range.

Nair, Hari P.; Crook, Adam M.; Bank, Seth R. [Microelectronics Research Center, Electrical and Computer Engineering, University of Texas at Austin, 10100 Burnet Rd, Austin, Texas 78712 (United States); Yu, Kin M. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2012-01-09T23:59:59.000Z

199

GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy  

Science Conference Proceedings (OSTI)

We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum dots grown by molecular beam epitaxy. Various nanostructures are observed as a function of the growth parameters. During growth, relaxation of the high local strain fields of the nanostructures plays an important role in their formation. Pyramidal dots with a high Sb content are often accompanied by threading dislocations above them. GaSb ring formation is favored by the use of a thin GaAs first cap layer and a high growth temperature of the second cap layer. At these capping conditions, strain-driven Sb diffusion combined with As/Sb exchange and Sb segregation remove the center of a nanostructure, creating a ring. Clusters of GaSb without a well defined morphology also appear regularly, often with a highly inhomogeneous structure which is sometimes divided up in fragments.

Smakman, E. P.; Garleff, J. K.; Rambabu, P.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Eindhoven 5612 AZ (Netherlands); Young, R. J.; Hayne, M. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2012-04-02T23:59:59.000Z

200

VIA EMAIL Ms. Leslie Jones ENERGY STAR Program  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

September 13, 2011 September 13, 2011 U.S. Environmental Protection Agency 1200 Pennsylvania Avenue, NW Room62023 Washington, DC 20460 Dear Ms. Jones: On July 18,2011, the United States Department of Energy (DOE) notified Whirlpool Corporation (Whirlpool) that DOE had completed testing of the Whirlpool (KitchenAid brand) refrigerator model KSRG25FVMS* under the ENERGY STAR Verification Testing Pilot Program and confirmed that the model did not meet the ENERGY STAR energy efficiency requirement for maximum permitted annual energy usage. DOE gave Whirlpool until Augnst 8, 2011, to provide conclusive manufacturing or design evidence or quality assurance information rebutting DOE testing, which showed that this product did not meet the ENERGY STAR Program's energy efficiency requirement.

Note: This page contains sample records for the topic "ga ky ms" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

VIA EMAIL Ms. Mariah Steele ENERGY STAR Program  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

August 29, 2012 August 29, 2012 U.S. Environmental Protection Agency 1200 Pennsylvania Avenue, NW Room 62023 Washington, DC 20460 Dear Ms. Steele: The U.S. Department of Energy ("DOE") selected a General Electric Company ("GE") refrigerator-freezer, basic model PFSFSNFZ****, for testing as part of DOE's ENERGY STAR® Verification Testing Program. On April6, 2012, DOE notified GE that the model did not meet the ENERGY STAR energy efficiency requirement for maximum permitted annual energy usage. DOE gave GE until April27, 2012, to respond. GE replied to DOE via email on April20, 2012. GE argued that DOE did not test in accordance with the relevant DOE test procedure. In addition, GE noted that it had confirmed the validity of the energy testing that formed the basis of GE's certification and product labeling.

202

VIA EMAIL Ms. Leslie Jones ENERGY STAR Program  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

December 22, 2011 December 22, 2011 U.S. Environmental Protection Agency 1200 Pennsylvania Avenue, NW Room 62023 Washington, DC 20460 Dear Ms. Jones: On November 1, 2011, the United States Depmiment of Energy ("DOE") notified Grainger Global Sourcing ("Grainger") that DOE had completed testing of the Dayton-brand refrigerator- freezer model 5NTX1 under the ENERGY STAR® Verification Testing Pilot Program and explained that the model did not meet the ENERGY STAR energy efficiency requirement for maximum permitted annual energy usage. DOE gave Grainger until November 20, 2011, to provide conclusive manufacturing or design evidence or quality assurance information rebutting DOE's test results. Grainger responded to DOE via email, submitting various documents, on November 18, 2011.

203

VIA EMAIL Ms. Leslie Jones ENERGY STAR Program  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

October 28, 2011 October 28, 2011 U.S. Environmental Protection Agency 1200 Pennsylvania Avenue NW Room 62023 Washington, DC 20460 Dear Ms. Jones: The Summit Appliance Division chest freezer model CFllES, manufactured by Midea, was selected for testing as part of the U.S. Department of Energy's (DOE) ENERGY STAR® Verification Testing Pilot Program. DOE's initial testing, performed on a unit of this model, indicated that it may not meet ENERGY STAR requirements. DOE notified Summit of the initial test results, and Summit voluntarily withdrew its model from ENERGY STAR without additional testing. DOE also notified Midea, as Midea manufactures the same basic model for distribution under a variety of other brand names and model numbers, including Midea HS-390C. Midea requested that DOE

204

VIA EMAIL Ms. Mariah Steele ENERGY STAR Program  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

June 20, 2013 June 20, 2013 U.S. Environmental Protection Agency 1200 Pennsylvania Avenue, NW Room 62023 Washington, DC 20460 Dear Ms. Steele: The U.S. Department of Energy ("DOE") selected a Summit-brand refrigerator-freezer, model Fl 112BL, manufactured by SANYO E&E (now Panasonic Appliances Refrigeration Systems Corporation of America ("P APRSA")) and sold by Felix Storch, Inc. ("Storch"), for testing as part ofDOE's ENERGY STAR® Verification Testing Program. On March 18, 2013, DOE notified Storch that the model did not meet the ENERGY STAR specification for maximum permitted annual energy use. PAPRSA replied to DOE on April 1, 2013, making two claims. First, PAPRSA argued that DOE's test laboratory, an Intertek laboratory located in Plano, Texas ("Intertek"), did not test in

205

VIA EMAIL Ms. Mariah Steele ENERGY STAR Program  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Program Program · U.S. Envirorunental Protection Agency . 1200 Peru1sylvania Avenue, NW Room 62023 · Washington, DC 20460 Dear Ms. Steele: June 7, 2013 The .U.S. Department of Energy ("DOE") selected an Edgestal'-brand dehumidifier, model DEP400EW, for.testing as part ofDOE's ENERGY STAR®Verification Testing Program. On· . October 24, 2012, DOE notified the manufacturer of this modd, , that the model did not meet the minimum energy factor required. for a model of its capacity according to the applicab~e ENERGY STAR specific~tion. · - replied to DOE representatives and raised two- concerns with the DOE testing.' DOE has considered these. concems and found that they did not impact the. validity of DOE's test results.

206

PNM Resources 2401 Aztec NE, MS-Z100  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

PNM Resources PNM Resources 2401 Aztec NE, MS-Z100 Albuquerque, NM 87107 505-241-2025 Fax 505 241-2384 PNMResources.com October 29, 2013 Mr. Christopher Lawrence Office of Electricity Delivery and Energy Reliability (OE-20) U.S. Department of Energy 1000 Independence Avenue, SW Washington, DC 20585 Submitted electronically via email to: Christopher.Lawrence@hq.doe.gov Dear Mr. Lawrence: Subject: Department of Energy (DOE)- Improving Performance of Federal Permitting and Review of Infrastructure Projects, Request for Information, 78 Fed. Reg. 53436 (Aug. 29, 2013) PNM Resources (PNMR) is an energy holding company with 2012 consolidated operating revenues of $1.3 billion. Through its regulated utilities, PNM and TNMP, PNMR serves electricity to more than 739,000 homes and businesses in New

207

VIA EMAIL Ms. Leslie Jones ENERGY STAR Program  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

May 22,2012 May 22,2012 U.S. Environmental Protection Agency 1200 Pennsylvania Avenue, NW Room62023 Washington, DC 20460 Dear Ms. Jones: The U.S. Department of Energy ("DOE") selected an Avanti Products ("Avanti") refrigerator, basic model BCA4560W-2 ("model BCA4560W-2"), for testing as patt of the DOE's ENERGY STAR® Verification Testing Program. On April 6, 2012, DOE notified Avanti that the model did not meet the ENERGY STAR energy efficiency requirement for maximum permitted annual energy usage. DOE gave Avanti until April27, 2012, to respond. Avanti responded to DOE via email, submitting various documents, on April27, 2012. Avanti explained that it had randomly selected units of model BCA4560W -2 for testing at third-party

208

Ms. Julie Smith Office of Electricity Delivery and Energy Reliability  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5, 2013 5, 2013 Ms. Julie Smith Office of Electricity Delivery and Energy Reliability Mail Code OE-20 U.S. Department of Energy 1000 Independence Avenue Washington, D.C. 20585 Juliea.smith@hq.doe.gov; Christopher.lawrence@hq.doe.gov Re: DOE RFI "Improving Performance of Federal Permitting and Review of Infrastructure Projects The American people support increased production and consumption of renewable energy according to credible public opinion polls. Too often the most appropriate sites for wind, solar, hydro, and other renewable generators are in rural areas that necessitate the construction of new high voltage transmission lines to deliver the energy to customer load centers. Siting such lines is a costly multi-year

209

Effect of Sb on the Properties of GaInP Top Cells (Presentation)  

DOE Green Energy (OSTI)

The summary of this report is that: (1) Sb can be used to increase V{sub oc} of a GaInP top cell; (2) the photovoltaic quality of GaInP is relatively unaffected by the presence of Sb; and (3) Sb-doped GaInP/GaAs tandem cells show promise for achieving efficiencies over 32%.

Olson, J. M.; McMahon, W. E.; Kurtz, S.

2006-05-01T23:59:59.000Z

210

Dielectrics for GaN based MIS-diodes  

SciTech Connect

GaN MIS diodes were demonstrated utilizing AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as insulators. A 345 {angstrom} of AlN was grown on the MOCVD grown n-GaN in a MOMBE system using trimethylamine alane as Al precursor and nitrogen generated from a wavemat ECR N2 plasma. For the Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) growth, a multi MBE chamber was used and a 195 {angstrom} oxide is E-beam evaporated from a single crystal source of Ga{sub 5}Gd{sub 3}O{sub 12}. The forward breakdown voltage of AlN and Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) diodes are 5V and 6V, respectively, which are significantly improved from {approximately} 1.2 V of schottky contact. From the C-V measurements, both kinds of diodes showed good charge modulation from accumulation to depletion at different frequencies. The insulator GaN interface roughness and the thickness of the insulator were measured with x-ray reflectivity.

Ren, F.; Abernathy, C.R.; MacKenzie, J.D. [Univ. of Florida, Gainesville, FL (United States)] [and others

1998-02-01T23:59:59.000Z

211

STEPS: A Grid Search Methodology for Optimized Peptide Identification Filtering of MS/MS Database Search Results  

Science Conference Proceedings (OSTI)

For bottom-up proteomics there are a wide variety of database searching algorithms in use for matching peptide sequences to tandem MS spectra. Likewise, there are numerous strategies being employed to produce a confident list of peptide identifications from the different search algorithm outputs. Here we introduce a grid search approach for determining optimal database filtering criteria in shotgun proteomics data analyses that is easily adaptable to any search. Systematic Trial and Error Parameter Selection - referred to as STEPS - utilizes user-defined parameter ranges to test a wide array of parameter combinations to arrive at an optimal "parameter set" for data filtering, thus maximizing confident identifications. The benefits of this approach in terms of numbers of true positive identifications are demonstrated using datasets derived from immunoaffinity-depleted blood serum and a bacterial cell lysate, two common proteomics sample types.

Piehowski, Paul D.; Petyuk, Vladislav A.; Sandoval, John D.; Burnum, Kristin E.; Kiebel, Gary R.; Monroe, Matthew E.; Anderson, Gordon A.; Camp, David G.; Smith, Richard D.

2013-03-01T23:59:59.000Z

212

Atomic hydrogen cleaning of polarized GaAs photocathodes  

DOE Green Energy (OSTI)

Atomic hydrogen cleaning followed by heat cleaning at 450 C was used to prepare negative-electron-affinity GaAs photocathodes. When hydrogen ions were eliminated, quantum efficiencies of 15% were obtained for bulk GaAs cathodes, higher than the results obtained using conventional 600 C heat cleaning. The low-temperature cleaning technique was successfully applied to thin, strained GaAs cathodes used for producing highly polarized electrons. No depolarization was observed even when the optimum cleaning time of about 30 seconds was extended by a factor of 100.

Maruyama, Takashi

2003-04-03T23:59:59.000Z

213

Outdoor Testing of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied  

DOE Green Energy (OSTI)

In this study, we measure the performance of GaInP2/GaAs tandem cells under direct beam sunlight outdoors in order to quantify their sensitivity to both spectral variation and GaInP2 top-cell thickness. A set of cells with five different top-cell thicknesses was mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for either the ASTM G-173 direct (G-173D) spectrum or the "air mass 1.5 global" (AM1.5G) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra with the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

McMahon, W. E.; Emergy, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

2005-08-01T23:59:59.000Z

214

On-Sun Comparison of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied  

DOE Green Energy (OSTI)

This study compares the on-sun performance of a set of GaInP2/GaAs tandem cells with different GaInP2 top-cell thicknesses. Because high-efficiency III-V cells are best suited to concentrating photovoltaic (CPV) applications, the cells were mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for an ''air mass 1.5 global'' (AM 1.5G) or a ''low aerosol optical depth'' (Low AOD) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra to predict the correct result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

McMahon, W. E.; Emery, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

2005-02-01T23:59:59.000Z

215

lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells  

E-Print Network (OSTI)

lntersubbancl transitions in high indium content InGaAs/AIGaAs quantum wells H. C. Chui, S. M. Lord report the first observation of intersubband transitions in In,Ga, -#s(y=O.3,0.5)/ AlGaAs quantum wells. These quantum wells were grown on a GaAs substrate with a linearly graded InGaAs buffer to achieve strain

Fejer, Martin M.

216

Realization of compressively strained GaN films grown on Si(110) substrates by inserting a thin AlN/GaN superlattice interlayer  

Science Conference Proceedings (OSTI)

We investigate the strain properties of GaN films grown by plasma-assisted molecular beam epitaxy on Si(110) substrates. It is found that the strain of the GaN film can be converted from a tensile to a compressive state simply by inserting a thin AlN/GaN superlattice structure (SLs) within the GaN film. The GaN layers seperated by the SLs can have different strain states, which indicates that the SLs plays a key role in the strain modulation during the growth and the cooling down processes. Using this simple technique, we grow a crack-free GaN film exceeding 2-{mu}m-thick. The realization of the compressively strained GaN film makes it possible to grow thick GaN films without crack generation on Si substrates for optic and electronic device applications.

Shen, X. Q.; Takahashi, T.; Kawashima, H.; Ide, T.; Shimizu, M. [Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Central 2, Tsukuba-shi, Ibaraki 305-8568 (Japan)

2012-07-16T23:59:59.000Z

217

Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching  

E-Print Network (OSTI)

The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into ...

Chen, A.

218

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Atlanta, GA Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA October 7, 2013 - 3:16pm Addthis Energy on My Mind / FUPWG / Atlanta, GA / May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta, Georgia Tuesday, May 2, 2006 5:00 - 6:30 Steering Committee meeting in the Danube Tigris Room 6:30 until... Networking dinner at the Marriott Wednesday, May 3, 2006 7:45 am Registration/Continental Breakfast 8:30 - 8:45 Welcome from Suzanne Sitherwood, SVP, Southern Operations, President, Atlanta Gas Light, Chattanooga Gas & Florida City Gas 8:45 - 9:00 FEMP Southeast Regional Office Welcome Traci Leath, FEMP 9:00 - 9:45 Washington Update David McAndrew, FEMP 9:45 - 10:15 Break - Networking 10:15 - 11:20 Navy Technical Program Update Paul Kistler, U.S. Navy

219

Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep...

220

Lattice vibrations of pure and doped GaSe  

Science Conference Proceedings (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

Note: This page contains sample records for the topic "ga ky ms" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

HH5, Antiferromagnetic Interlayer Exchange Couplings in Ga  

Science Conference Proceedings (OSTI)

Author(s), Sun Jae Chung, Sanghoon Lee, Brian J. Kirby, Julie A. Borchers, ... LATE NEWS: KK3, Non-Catalytic Synthesis of GaN Nanostructures at Low...

222

Preparation of GaAs photocathodes at low temperature  

SciTech Connect

The preparation of an atomically clean surface is a necessary step in the formation of negative electron affinity (NEA) GaAs. Traditional methods to this end include cleaving, heat cleaning and epitaxial growth. Cleaving has the advantage of yielding a fresh surface after each cleave, but is limited to small areas and is not suitable for specialized structures. Heat cleaning is both simple and highly successful, so it is used as a preparation method in virtually all laboratories employing a NEA source on a regular basis. Due to its high cost and complexity, epitaxial growth of GaAs with subsequent in vacuo transfer is not a practical solution for most end users of GaAs as a NEA electron source. While simple, the heating cleaning process has a number of disadvantages. Here, a variety of cleaning techniques related to preparation of an atomically clean GaAs surface without heating to 600 C are discussed and evaluated.

Mulhollan, G.; Clendenin, J.; Tang, H.

1996-10-01T23:59:59.000Z

223

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

Gasoline and Diesel Fuel Update (EIA)

Trinidad and Tobago (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul...

224

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

Gasoline and Diesel Fuel Update (EIA)

Egypt (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5,780...

225

Elba Island, GA Liquefied Natural Gas Total Imports (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

Liquefied Natural Gas Total Imports (Million Cubic Feet) Elba Island, GA Liquefied Natural Gas Total Imports (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5...

226

GaAs Films Prepared by RF-Magnetron Sputtering  

DOE Green Energy (OSTI)

The authors reported on the optical absorption, adhesion, and microstructure of RF-magnetron sputtered films of hydrogenated amorphous and microcrystalline GaAs films for the 1 to 25 {micro}m infrared wavelength rate. Sputtering parameters which were varied include sputtering power, temperature and pressure, and hydrogen sputtering-gas concentration. TEM results show a sharp transition from purely amorphous GaAs to a mixture of microcrystalline GaAs in an amorphous matrix at 34 {+-} 2 C. By optimizing the sputtering parameters, the optical absorption coefficient can be decreased below 100 cm{sup -1} for wavelengths greater than about 1.25 {micro}m. These results represent the lowest reported values of optical absorption for sputtered films of GaAs directly measured by spectrophotometry for the near-infrared wavelength region.

L.H. Ouyang; D.L. Rode; T. Zulkifli; B. Abraham-Shrauner; N. Lewis; M.R. Freeman

2001-08-01T23:59:59.000Z

227

Micro Raman Spectroscopy of Annealed Erbium Implanted GaN  

E-Print Network (OSTI)

Wurtzite GaN epilayers grown by metal organic chemical vapor deposition on sapphire substrates were subsequently ion implanted with Er to a dose of 510? cm?. The implanted samples were annealed in nitrogen atmosphere ...

Vajpeyi, Agam P.

228

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Equatorial Guinea (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Equatorial Guinea (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3...

229

Elba Island, GA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Nigeria (Million Cubic Feet) Elba Island, GA Natural Gas Liquefied Natural Gas Imports from Nigeria (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6...

230

Cathodoluminescence Microanalysis of Suspended GaN Nano ...  

Science Conference Proceedings (OSTI)

CL from bulk GaN is dominated by the ~3.4 eV near-band-edge emission. In contrast, the suspended nano-membranes emit a broad defect associated emission...

231

BB2, Novel Cs-Free GaN Photocathodes  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

232

Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN  

Science Conference Proceedings (OSTI)

We investigate, via time-resolved photoluminescence, the temperature-dependence of charge carrier recombination mechanisms in nonpolar (Al,Ga)N/GaN single quantum wells (QWs) grown via molecular beam epitaxy on the a-facet of bulk GaN crystals. We study the influence of both QW width and barrier Al content on the dynamics of excitons in the 10-320 K range. We first show that the effective lifetime of QW excitons {tau} increases with temperature, which is evidence that nonradiative mechanisms do not play any significant role in the low-temperature range. The temperature range for increasing {tau} depends on the QW width and Al content in the (Al,Ga)N barriers. For higher temperatures, we observe a reduction in the QW emission lifetime combined with an increase in the decay time for excitons in the barriers, until both exciton populations get fully thermalized. Based on analysis of the ratio between barrier and QW emission intensities, we demonstrate that the main mechanism limiting the radiative efficiency in our set of samples is related to nonradiative recombination in the (Al,Ga)N barriers of charge carriers that have been thermally emitted from the QWs.

Corfdir, P.; Dussaigne, A.; Giraud, E.; Ganiere, J.-D.; Grandjean, N.; Deveaud-Pledran, B. [Institute of Condensed Matter Physics, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Teisseyre, H. [Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw (Poland); Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Suski, T.; Grzegory, I. [Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw (Poland); Lefebvre, P. [Laboratoire Charles Coulomb - UMR5221 - CNRS - Universite Montpellier 2, 34095 Montpellier (France)

2012-02-01T23:59:59.000Z

233

chemdata.nist.gov/mass-spc/ms-search/downloads/Readme_NIST_Forensics_DART.txt  

Science Conference Proceedings (OSTI)

... this point, if NIST MS Search is running ... Vista, you may need to enter administrative credentials ... Terms of Use ===== o Installation and Use ...

2013-06-30T23:59:59.000Z

234

Ms Robin Felder | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Ms. Robin Felder Chemical Sciences, Geosciences, & Biosciences (CSGB) Division CSGB Home About Staff ListingsContact Information What's New Research Areas Scientific Highlights...

235

ms&t'11 plenary session features u.s. national science foundation ...  

Science Conference Proceedings (OSTI)

08/30 - MS&T'11 PLENARY SESSION FEATURES U.S. NATIONAL SCIENCE ... Dr. Wadsworth's presentation, Responding to Increasing, Energy,...

236

Modeling of InGaSb thermophotovoltaic cells and materials  

DOE Green Energy (OSTI)

A closed form computer program has been developed for the simulation and optimization of In{sub x}Ga{sub 1{minus}x}Sb thermophotovoltaic cells operating at room temperature. The program includes material parameter models of the energy bandgap, optical absorption constant, electron and hole mobility, intrinsic carrier concentration and index of refraction for any composition of GaInSb alloys.

Zierak, M.; Borrego, J.M.; Bhat, I.; Gutmann, R.J. [Rensselaer Polytechnic Inst., Troy, NY (United States); Charache, G. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

237

SEU design consideration for MESFETs on LT GaAs  

SciTech Connect

Computer simulation results are reported on transistor design and single-event charge collection modeling of metal-semiconductor field effect transistors (MESFETs) fabricated in the Vitesse H-GaAsIII{reg_sign} process on Low Temperature grown (LT) GaAs epitaxial layers. Tradeoffs in Single Event Upset (SEU) immunity and transistor design are discussed. Effects due to active loads and diffusion barriers are examined.

Weatherford, T.R.; Radice, R.; Eskins, D. [Naval Postgraduate School, Monterey, CA (United States)] [and others

1997-12-01T23:59:59.000Z

238

Influence of defect formation as a result of incorporation of a Mn {delta} layer on the photosensitiviy spectrum of InGaAs/GaAs quantum wells  

Science Conference Proceedings (OSTI)

The influence of defect formation upon the deposition of a Mn {delta} layer and a GaAs coating layer (with the use of laser evaporation) on the photosensitivity spectra of heterostructures with InGaAs/GaAs quantum wells located in the near-surface region has been studied.

Gorshkov, A. P., E-mail: gorskovap@phys.unn.ru; Karpovich, I. A.; Pavlova, E. D.; Kalenteva, I. L. [Lobachevsky State University of Nizhny Novgorod (Russian Federation)

2012-02-15T23:59:59.000Z

239

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures  

E-Print Network (OSTI)

Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures, U.S.A. ABSTRACT Characterization of operational AlGaInN heterostructure light emitting diodes (LEDs the device lifetime in a non-destructive mode. INTRODUCTION Group ­ III nitride light emitting diodes (LEDs

Wetzel, Christian M.

240

Excitons in single and double GaAs/AlGaAs/ZnSe/Zn(Cd)MnSe heterovalent quantum wells  

Science Conference Proceedings (OSTI)

Exciton photoluminescence spectra, photoluminescence excitation spectra, and magnetophotoluminescence spectra of single (GaAs/AlGaAs/ZnMnSe) and double (GaAs/AlGaAs/ZnSe/ZnCdMnSe) heterovalent quantum wells formed by molecular beam epitaxy are studied. It is shown that the exciton absorption spectrum of such quantum wells mainly reproduces the resonant exciton spectrum expected for usual quantum wells with similar parameters, while the radiative exciton recombination have substantial distinctions, in particular the additional localization mechanism determined by defects generated by heterovalent interface exists. The nature of these localization centers is not currently clarified; their presence leads to broadening of photoluminescence lines and to an increase in the Stokes shift between the peaks of luminescence and absorption, as well as determining the variation in the magnetic g factor of bound exciton complexes.

Toropov, A. A., E-mail: toropov@beam.ioffe.ru; Kaibyshev, V. Kh.; Terent'ev, Ya. V.; Ivanov, S. V.; Kop'ev, P. S. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

2011-02-15T23:59:59.000Z

Note: This page contains sample records for the topic "ga ky ms" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Mechanism for radiative recombination and defect properties of GaP/GaNP core/shell nanowires  

SciTech Connect

Recombination processes in GaP/GaNP core/shell nanowires (NWs) grown on a Si substrate by molecular beam epitaxy are examined using a variety of optical characterization techniques, including cw- and time-resolved photoluminescence and optically detected magnetic resonance (ODMR). Superior optical quality of the structures is demonstrated based on the observation of intense emission from a single NW at room temperature. This emission is shown to originate from radiative transitions within N-related localized states. From ODMR, growth of GaP/GaNP NWs is also found to facilitate formation of complex defects containing a P atom at its core that act as centers of competing non-radiative recombination.

Dobrovolsky, A.; Stehr, J. E.; Chen, S. L.; Chen, W. M.; Buyanova, I. A. [Department of Physics, Chemistry and Biology, Linkoeping University, S-581 83 Linkoeping (Sweden); Kuang, Y. J. [Department of Physics, University of California, La Jolla, California 92093 (United States); Sukrittanon, S. [Graduate Program of Materials Science and Engineering, La Jolla, California 92093 (United States); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, La Jolla, California 92093 (United States)

2012-10-15T23:59:59.000Z

242

Optical anisotropy of GaSb type-II nanorods on vicinal (111)B GaAs  

SciTech Connect

We form self-assembled GaSb type-II nanorods on a vicinal (111)B GaAs substrate by molecular beam epitaxy and study their optical anisotropy. The GaSb nanorods are elongated and aligned along the [-1 0 1] direction, where the average length, width, and height are about 84, 30, and 2.5 nm. In polarized photoluminescence (PL) measurements, the peak of the GaSb nanorods is observed at about 1.1 eV, where the PL intensity is largest for the [-1 0 1] polarization and smallest for the polarization perpendicular to it. The degree of polarization is more than 20% and depends on the recombination energy. By comparing with a theoretical model based on 4 x 4 Luttinger-Kohn Hamiltonian, we find that the experimental results are explained by considering the Sb/As inter-diffusion and the nanorod height distribution.

Kawazu, Takuya; Noda, Takeshi; Mano, Takaaki; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Akiyama, Yoshihiro [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya (Japan); Sakaki, Hiroyuki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya (Japan)

2011-12-05T23:59:59.000Z

243

EE9, MBE Grown InGaAsSbN/GaSb Single Quantum Wells for Mid ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

244

II3, 2?m Thick Device Quality GaN on Si(111) Using AlGaN Graded ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

245

JJ1, Internal Quantum Efficiency of Polar and Non-Polar GaInN/GaN ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

246

Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods  

E-Print Network (OSTI)

Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency droop induced by density-activated defect recombination in nanorod structure of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that the improvement is a combined effect of the amendment contributed by lateral carrier confinement and the deterioration made by surface trapping.

Shi, Chentian; Yang, Fan; Park, Min Joo; Kwak, Joon Seop; Jung, Sukkoo; Choi, Yoon-Ho; Wang, Xiaoyong; Xiao, Min

2013-01-01T23:59:59.000Z

247

SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors  

Science Conference Proceedings (OSTI)

Hydrothermally grown SnO2 was integrated with AlGaN/GaN high electron mobility transistor (HEMT) sensor as the gate electrode for oxygen detection. The crystalline of the SnO2 was improved after annealing at 400 C. The grain growth kinetics of the SnO2 nanomaterials, together with the O2 gas sensing properties and sensing mechanism of the SnO2 gated HEMT sensors were investigated. Detection of 1% oxygen in nitrogen at 100 C was possible. A low operation temperature and low power consumption oxygen sensor can be achieved by combining the SnO2 films with the AlGaN/GaN HEMT structure

Hung, S.T. [Feng Chia University, Taichung, Taiwan; Chung, Chi-Jung [Feng Chia University, Taichung, Taiwan; Chen, Chin Ching [University of Florida, Gainesville; Lo, C. F. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

248

Proceedings of the 2011 Emerging M&S Applications in Industry and Academia Symposium  

Science Conference Proceedings (OSTI)

The EAIA symposium goes into its third year as an independent symposium! As in the recent years this symposium functions as the melting pot for new ideas and innovative applications of M&S that are not yet mature enough to fit into the traditional M&S ...

Andreas Tolk

2011-04-01T23:59:59.000Z

249

Gas chromatograph-mass spectrometer (GC/MS) system for quantitative analysis of reactive chemical compounds  

DOE Patents (OSTI)

Described is a new gas chromatograph-mass spectrometer (GC/MS) system and method for quantitative analysis of reactive chemical compounds. All components of such a GC/MS system external to the oven of the gas chromatograph are programmably temperature controlled to operate at a volatilization temperature specific to the compound(s) sought to be separated and measured.

Grindstaff, Quirinus G. (Oak Ridge, TN)

1992-01-01T23:59:59.000Z

250

Performance evaluation of an improved harmony search algorithm for numerical optimization: Melody Search (MS)  

Science Conference Proceedings (OSTI)

Melody Search (MS) Algorithm as an innovative improved version of Harmony Search optimization method, with a novel Alternative Improvisation Procedure (AIP) is presented in this paper. MS algorithm mimics performance processes of the group improvisation ... Keywords: Alternative improvisation procedure, Harmony search, Melody Search algorithm, Numerical optimization, Stochastic search methods

S. M. Ashrafi; A. B. Dariane

2013-04-01T23:59:59.000Z

251

Emerging M&S challenges for human, social, cultural, and behavioral modeling  

Science Conference Proceedings (OSTI)

The discipline of Modeling and Simulation (M&S) is ubiquitous in many domains, such as training and education, support of decision-making, or analysis of potential developments. In particular the armed forces apply M&S extensively and enable pioneering ... Keywords: behavioral modeling, cultural modeling, human modeling, social modeling

Dr. Andreas Tolk

2009-07-01T23:59:59.000Z

252

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network (OSTI)

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

253

Elimination of charge-enhancement effects in GaAs FETs with a low-temperature grown GaAs buffer layer  

Science Conference Proceedings (OSTI)

The use of low temperature grown GaAs (LT GaAs) buffer layer in GaAs FETs is shown via computer simulation and experimental measurement to reduce ion-induced charge collection by two to three orders of magnitude. This reduction in collected charge is associated with the efficient reduction of charge-enhancement mechanisms in the FETs. Error rate calculations indicate that the soft error rate of LT GaAs integrated circuits will be reduced by several orders of magnitude when compared to conventional FET-based GaAs ICs.

McMorrow, D.; Weatherford, T.R.; Curtice, W.R.; Knudson, A.R.; Buchner, S.; Melinger, J.S.; Tran, L.H.; Campbell, A.B. [Naval Research Lab., Washington, DC (United States)

1995-12-01T23:59:59.000Z

254

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes  

SciTech Connect

The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

2010-01-15T23:59:59.000Z

255

High Voltage GaN Schottky Rectifiers  

SciTech Connect

Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

1999-10-25T23:59:59.000Z

256

CC2, Two-Dimensional Electron Gas in In X Al 1-X N/Aln/GaN ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

257

U-190: Microsoft Security Bulletin MS12-037 - Critical | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0: Microsoft Security Bulletin MS12-037 - Critical 0: Microsoft Security Bulletin MS12-037 - Critical U-190: Microsoft Security Bulletin MS12-037 - Critical June 13, 2012 - 3:30pm Addthis PROBLEM: Microsoft Security Bulletin MS12-037 - Critical PLATFORM: Internet Explorer 8.x ABSTRACT: This security update resolves one publicly disclosed and twelve privately reported vulnerabilities in Internet Explorer. LINKS: Microsoft Security Bulletin MS12-037 - Critical Secunia Advisory SA49412 IMPACT ASSESSMENT: High Discussion: The most severe vulnerabilities could allow remote code execution if a user views a specially crafted webpage using Internet Explorer. An attacker who successfully exploited any of these vulnerabilities could gain the same user rights as the current user. Users whose accounts are configured to have fewer user rights on the system could be less impacted than users who

258

Phonon Knudsen flow in GaAs/AlAs superlattices  

DOE Green Energy (OSTI)

The measured in-plane thermal conductivity, {delta}{sub SL} of GaAs/AlAs superlattices with even moderate layer thicknesses are significantly smaller than the weighted average, {delta}{sub l} = 67 W/Km, of the bulk GaAs and AlAs conductivities. One expects a suppression of the thermal conductivity to that of an actual Al{sub 0.5}Ga{sub 0.5}As alloy when the thickness of the GaAs and AlAs layers approaches that of a single monolayer. However, the observed superlattice thermal conductivity remains suppressed even at layer thickness {approx_gt} 10 nm. The low thermal conductivities, and very high mobilities, make n-doped GaAs/AlAs superlattices attractive possibilities for thermoelectric devices. With Molecular-Beam-Epitaxial grown GaAs/AlAs superlattices one can expect the individual GaAs and AlAs layers to be extremely clean. Defect and/or alloy scattering is limited to be near the heterostructure interfaces. The authors estimate the room-temperature phonon mean-free-path to be 42 (22) nm for the longitudinal (transverse) mode and thus comparable to or smaller than the layer thicknesses. Thus they expect an important phonon scattering at the interfaces. They study this phonon scattering at the superlattice interfaces assuming a Knudsen flow characterized by diffusive scattering. The solid curve in the figure shows the Knudsen-flow theory estimated for the superlattice thermal conductivity which shows a significant reduction when the layer thickness is shorter than the estimated phonon mean free paths.

Hyldgaard, P.; Mahan, G.D. [Oak Ridge National Lab., TN (United States). Solid State Div.]|[Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy

1995-09-01T23:59:59.000Z

259

Strain relaxation in GaN/Al{sub x}Ga{sub 1-x}N superlattices grown by plasma-assisted molecular-beam epitaxy  

SciTech Connect

We have investigated the misfit relaxation process in GaN/Al{sub x}Ga{sub 1-x}N (x = 0.1, 0.3, 0.44) superlattices (SL) deposited by plasma-assisted molecular beam epitaxy. The SLs under consideration were designed to achieve intersubband absorption in the mid-infrared spectral range. We have considered the case of growth on GaN (tensile stress) and on AlGaN (compressive stress) buffer layers, both deposited on GaN-on-sapphire templates. Using GaN buffer layers, the SL remains almost pseudomorphic for x = 0.1, 0.3, with edge-type threading dislocation densities below 9 x 10{sup 8} cm{sup -2} to 2 x 10{sup 9} cm{sup -2}. Increasing the Al mole fraction to 0.44, we observe an enhancement of misfit relaxation resulting in dislocation densities above 10{sup 10} cm{sup -2}. In the case of growth on AlGaN, strain relaxation is systematically stronger, with the corresponding increase in the dislocation density. In addition to the average relaxation trend of the SL, in situ measurements indicate a periodic fluctuation of the in-plane lattice parameter, which is explained by the different elastic response of the GaN and AlGaN surfaces to the Ga excess at the growth front. The results are compared with GaN/AlN SLs designed for near-infrared intersubband absorption.

Kotsar, Y.; Bellet-Amalric, E.; Das, A.; Monroy, E. [CEA-Grenoble, INAC/SP2M/NPSC, 17 Rue des Martyrs, 38054 Grenoble cedex 9 (France); Doisneau, B. [SIMaP, Grenoble INP, Domaine Universitaire, BP 75, 38402 Saint Martin d'Heres (France); Sarigiannidou, E. [LMGP, Grenoble INP, 3 Parvis Louis Neel, BP 257, 38016 Grenoble cedex 1 (France)

2011-08-01T23:59:59.000Z

260

Testing of ethylene propylene seals for the GA-4/GA-9 casks  

SciTech Connect

The primary O-ring seal of the GA-4 and GA-9 casks was tested for leakage with a full-scale mockup of the cask lid and flange. Tests were performed at temperatures of ambient, {minus}41{degrees}, 121{degrees}, and 193{degrees}C. Shim plates between the lid and flange simulated gaps caused by thermal distortion. The testing used a helium mass spectrometer leak detector (MSLD). Results showed that the primary seal was leaktight for all test conditions. Helium permeation through the seal began in 13--23 minutes for the ambient tests and in 1--2 minutes for the tests at elevated temperatures. After each test several hours of the pumping were typically required to reduce the MSLD background reading to an acceptable level for the next test, indicating that the seal had become saturated with helium. To verify that the test results showed permeation and not real leakage, several response checks were conducted in which a calibrated leak source was inserted in the detector line near the seal. When the leak source was activated the detector responded within seconds.

Boonstra, R.H.

1993-08-01T23:59:59.000Z

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261

Nanostructuring of silicon substrates for the site-controlled growth of GaAs/In0.15Ga0.85As/GaAs nanostructures  

Science Conference Proceedings (OSTI)

We report the optimization of electron beam lithography and inductively coupled plasma (ICP) dry etching processes to fabricate pre-patterned Si (100) substrates with sub-100nm holes with controlled size and shape. An efficient in situ cleaning sequence ... Keywords: Electron beam lithography, ICP dry etching, InGaAs quantum dots, MBE growth, Nanostructuring of silicon

Muhammad Usman; Tariq Alzoubi; Mohamed Benyoucef; Johann Peter Reithmaier

2012-09-01T23:59:59.000Z

262

NGA_99fin.vp  

Gasoline and Diesel Fuel Update (EIA)

9 9 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 1999 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 1999 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost and Quality of Fuels for Electric Plants," and Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental

263

C:\ANNUAL\VENTCHAP.V8\NGAla1109.vp  

Gasoline and Diesel Fuel Update (EIA)

Energy Energy Information Administration / Natural Gas Annual 2000 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Note: Commercial prices include natural gas delivered for use as vehicle fuel. Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ 17. Average Price of Natural Gas Delivered to U.S. Residential

264

NGA98fin5.vp  

Gasoline and Diesel Fuel Update (EIA)

8 8 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 1998 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 1998 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost and Quality of Fuels for Electric Plants," and Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental

265

C:\ANNUAL\VENTCHAP.V8\NGAla1109.vp  

Gasoline and Diesel Fuel Update (EIA)

2000 2000 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-99.99 10.00-11.99 12.00+ 19. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 2000 (Dollars per Thousand Cubic Feet) Figure 20. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 2000 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost and Quality of Fuels for Electric Plants," and Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural

266

C:\Annual\VENTCHAP.V8\NGA02.vp  

Gasoline and Diesel Fuel Update (EIA)

2002 2002 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition," and Form EIA 910, "Monthly Natural Gas Marketer Survey." 17. Average Price of Natural Gas Delivered to U.S. Commercial Consumers, 2002 (Dollars per Thousand Cubic Feet) Figure 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK 16. Average Price of Natural Gas Delivered to U.S. Residential Consumers, 2002 (Dollars per Thousand Cubic Feet) Figure Source: Energy Information Administration

267

Microsoft Word - Figure_18_19.doc  

Gasoline and Diesel Fuel Update (EIA)

9 9 0.00-2.49 2.50-4.49 4.50-6.49 6.50-8.49 8.50-10.49 10.50+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN WV VA KY PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK MD 0.00-2.49 2.50-4.49 4.50-6.49 6.50-8.49 8.50-10.49 10.50+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN WV VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK Figure 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 2004 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Power Consumers, 2004 (Dollars per Thousand Cubic Feet) Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." Note: States where the electric power price has been withheld (see Table 23) are included in the $0.00-$2.49 price category.

268

Microsoft Word - NGAMaster_State_TablesNov12.doc  

Gasoline and Diesel Fuel Update (EIA)

49 49 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN WV VA KY PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK MD 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN WV VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK Figure 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 2003 (Dollars per Thousand Cubic Feet) Figure 19. Average Price of Natural Gas Delivered to U.S. Electric Power Consumers, 2003 (Dollars per Thousand Cubic Feet) Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." Note: States where the electric power price has been withheld (see Table 23) are included in the $0.00-$1.99 price category.

269

C:\Annual\VENTCHAP.V8\NGA02.vp  

Gasoline and Diesel Fuel Update (EIA)

2 2 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK 18. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 2002 (Dollars per Thousand Cubic Feet) Figure Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK 19. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 2002 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of Cost

270

NGA_99fin.vp  

Gasoline and Diesel Fuel Update (EIA)

9 9 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Note: Commercial prices include natural gas delivered for use as vehicle fuel. Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 16. Average Price of Natural Gas Delivered to U.S. Residential Consumers, 1999 (Dollars per Thousand Cubic Feet) Figure

271

C:\ANNUAL\VENTCHAP.V8\NGA.VP  

Gasoline and Diesel Fuel Update (EIA)

8 8 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Note: Commercial prices include natural gas delivered for use as vehicle fuel. Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 16. Average Price of Natural Gas Delivered to U.S. Residential Consumers, 1997 (Dollars per Thousand Cubic Feet) Figure

272

C:\ANNUAL\VENTCHAP.V8\NewNGA02.vp  

Gasoline and Diesel Fuel Update (EIA)

2001 2001 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." 28. Average Price of Natural Gas Delivered to U.S. Onsystem Residential Consumers, 2001 (Dollars per Thousand Cubic Feet) Figure 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK Note: Commercial prices include natural gas delivered for use as vehicle fuel. Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition."

273

NGA98fin5.vp  

Gasoline and Diesel Fuel Update (EIA)

1998 1998 NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." NJ WY AK AL CA AR CO CT DE FL GA HI ID KS IL IN IA IA KY LA ME MI MA MD MN MS MT MO NE ND OH NV NM NY NH NC OK OR PA RI SC SD TN TX UT VT WA WV WI AZ VA DC Note: Commercial prices include natural gas delivered for use as vehicle fuel. Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 0.00-1.99 2.00-2.99 3.00-3.99 4.00-4.99 5.00-5.99 6.00-6.99 7.00+ 16. Average Price of Natural Gas Delivered to U.S. Residential Consumers, 1998 (Dollars per Thousand Cubic Feet) Figure

274

C:\ANNUAL\VENTCHAP.V8\NewNGA02.vp  

Gasoline and Diesel Fuel Update (EIA)

2001 2001 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." 30. Average Price of Natural Gas Delivered to U.S. Onsystem Industrial Consumers, 2001 (Dollars per Thousand Cubic Feet) Figure 0.00-1.99 2.00-3.99 4.00-5.99 6.00-7.99 8.00-9.99 10.00-11.99 12.00+ WA ID MT OR CA NV UT AZ NM CO WY ND SD MN WI NE IA KS MO TX IL IN OH MI OK AR TN W VA KY MD PA WI NY VT NH MA CT ME RI NJ DE DC NC SC GA AL MS LA FL HI AK 31. Average Price of Natural Gas Delivered to U.S. Electric Utilities, 2001 (Dollars per Thousand Cubic Feet) Figure Sources: Federal Energy Regulatory Commission (FERC), Form FERC-423, "Monthly Report of

275

Electric field engineering in GaN high electron mobility transistors  

E-Print Network (OSTI)

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

276

Light extraction in individual GaN nanowires on Si for LEDs  

E-Print Network (OSTI)

GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

Zhou, Xiang

277

High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy  

Science Conference Proceedings (OSTI)

We report the highest mobility values above 2000 cm{sup 2}/Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

Miyashita, Naoya; Ahsan, Nazmul; Monirul Islam, Muhammad; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 (Japan); Inagaki, Makoto [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Aichi (Japan); Yamaguchi, Masafumi [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904 (Japan); Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Aichi (Japan)

2012-11-26T23:59:59.000Z

278

Black-body radiation shift of the Ga$^{+}$ clock transition  

E-Print Network (OSTI)

The blackbody radiation shift of the Ga$^+$ $4s^2 \\ ^1S^e_0 \\to 4s4p \\ ^3P^o_0$ clock transition is computed to be $-$$0.0140 \\pm 0.0048$ Hz at 300 K. The small shift is consistent with the blackbody shifts of the clock transitions of other group III ions which are of a similar size. The polarizabilities of the Ga$^+$ $4s^2 \\ ^1S^e_0$, $4s4p \\ ^3P^o_0$, and $4s4p \\ ^1P^o_1$ states were computed using the configuration interaction method with an underlying semi-empirical core potential. A byproduct of the analysis involved large scale calculations of the low lying spectrum and oscillator strengths of the Ga$^{2+}$ ion.

Cheng, Yongjun

2013-01-01T23:59:59.000Z

279

Aug. 8-9, 2006 HAPL meeting, GA Open Discussion on Advanced Armor  

E-Print Network (OSTI)

Aug. 8-9, 2006 HAPL meeting, GA 1 Open Discussion on Advanced Armor Concepts Moderated by A. René in case the W armor does not work. #12;Aug. 8-9, 2006 HAPL meeting, GA 3 Roman Aquaduct at Pont du Gard, Provence #12;Aug. 8-9, 2006 HAPL meeting, GA 4 Possible Advanced Armor Options Include: · Engineered

Raffray, A. René

280

Current injection efficiency of InGaAsN quantum-well lasers Nelson Tansua  

E-Print Network (OSTI)

Current injection efficiency of InGaAsN quantum-well lasers Nelson Tansua Department of Electrical-threshold current injection efficiency of quantum well QW lasers is clarified. The analysis presented here is applied to the current injection efficiency of 1200 nm emitting InGaAs and 1300 nm emitting InGaAsN QW

Gilchrist, James F.

Note: This page contains sample records for the topic "ga ky ms" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

ANN-based GA for generating the sizing curve of stand-alone photovoltaic systems  

Science Conference Proceedings (OSTI)

Recent advances in artificial intelligence techniques have allowed the application of such technologies in real engineering problems. In this paper, an artificial neural network-based genetic algorithm (ANN-GA) model was developed for generating the ... Keywords: ANN, ANN-GA, GA, Prediction, Sizing curve, Stand-alone PV system

Adel Mellit

2010-05-01T23:59:59.000Z

282

Luminescence Enhancement in InGaN and ZnO by Water Vapor ...  

Science Conference Proceedings (OSTI)

Dependence of Ag/In Ratio of AgInS2 Crystals Grown by Hot-Press Method ... Analysis of Temperature Characteristics of InGaP/InGaAs/Ge Triple-Junction Solar Cell ... Luminescence Enhancement in InGaN and ZnO by Water Vapor Remote...

283

Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a  

E-Print Network (OSTI)

is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

Okamoto, Koichi

284

TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron  

E-Print Network (OSTI)

neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

285

Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs  

E-Print Network (OSTI)

The first on-wafer integration of Si(100) MOSFETs and AlGaN/GaN high electron mobility transistors (HEMTs) is demonstrated. To enable a fully Si-compatible process, we fabricated a novel Si(100)-GaN-Si(100) virtual substrate ...

Piner, Edwin L.

286

Vertically aligned GaN nanotubes - Fabrication and current image analysis  

Science Conference Proceedings (OSTI)

In this work, we present a one step formation method of nanotubes on GaN film, and then map out local current of nanotubes. GaN nanotubes were formed by inductively coupled plasma (ICP) etching and found that tops of these nanotubes were hexagonal with ... Keywords: C-AFM, FESEM, GaN, ICP, Nanotubes

Shang-Chao Hung; Yan-Kuin Su; Shoou-Jinn Chang; Y. H. Chen

2006-11-01T23:59:59.000Z

287

Epitaxial EuO thin films on GaAs  

SciTech Connect

We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57 deg., a significant remanent magnetization, and a Curie temperature of 69 K.

Swartz, A. G.; Ciraldo, J.; Wong, J. J. I.; Li Yan; Han Wei; Lin Tao; Shi, J.; Kawakami, R. K. [Department of Physics and Astronomy, University of California, Riverside, California 92521 (United States); Mack, S.; Awschalom, D. D. [Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106 (United States)

2010-09-13T23:59:59.000Z

288

GA Hot Cell D&D Closeout Report  

Office of Legacy Management (LM)

GENERAL ATOMICS GENERAL ATOMICS HOT CELL FACILITY DECONTAMINATION & DECOMMISSIONING PROJECT FINAL PROJECT CLOSEOUT REPORT prepared for GA HOT CELL D&D PROJECT CONTRACT NUMBERS DE-AC03-84SF11962 and DE-AC03-95SF20798 PBS VL-GA-0012 Approvals Prepared by: James Davis, III Date Project Manager, Oakland Environmental Programs Office Reviewed by: John Lee Date Deputy, Oakland Environmental Programs Office Approved by: Laurence McEwen Date Acting Director, Oakland Environmental Programs Office General Atomics Hot Cell Facility D&D Project Closeout Report Contents Page i CONTENTS CONTENTS.....................................................................................................................................

289

AlP/GaP distributed Bragg reflectors  

SciTech Connect

Distributed Bragg reflectors with high reflectivity bands centered at wavelengths from 530 to 690 nm (green to red) based on AlP/GaP quarter-wave stacks are prepared on (001)GaP using gas-source molecular-beam epitaxy. Additionally, the complex refractive index of AlP is measured using spectroscopic ellipsometry within the range of 330-850 nm in order to facilitate an accurate reflector design. Structures consisting of 15 quarter-wave stacks reach a peak reflectance between 95% and 98%, depending on the spectral position of the maximum.

Emberger, Valentin; Hatami, Fariba; Ted Masselink, W. [Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15, D-12489 Berlin (Germany); Peters, Sven [Sentech Instruments GmbH, Schwarzschildstr. 2, 12489 Berlin (Germany)

2013-07-15T23:59:59.000Z

290

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

291

Electron Hall Mobility in GaAsBi  

Science Conference Proceedings (OSTI)

We present measurements of the electron Hall mobility in n-type GaAs{sub 1-x}Bi{sub x} epilayers. We observed no significant degradation in the electron mobility with Bi incorporation in GaAs, up to a concentration of 1.2%. At higher Bi concentration ({ge} 1.6%) some degradation of the electron mobility was observed, although there is no apparent trend. Temperature dependent Hall measurements of the electron mobility suggest neutral impurity scattering to be the dominant scattering mechanism.

Kini, R. N.; Bhusal, L.; Ptak, A. J.; France, R.; Mascarenhas, A.

2009-01-01T23:59:59.000Z

292

Analyzing the growth of In{sub x}Ga{sub 1-x}N/GaN superlattices in self-induced GaN nanowires by x-ray diffraction  

Science Conference Proceedings (OSTI)

Self-induced GaN nanowires are grown by plasma-assisted molecular beam epitaxy, with In{sub x}Ga{sub 1-x}N quantum wells inserted to form an axial superlattice. From the {omega}-2{theta} scans of a laboratory x-ray diffraction experiment, we obtain the superlattice period, the thickness of the quantum wells, and the In content in this layer. The axial growth rate of the In{sub x}Ga{sub 1-x}N quantum wells is significantly enhanced, which we attribute to increased Ga diffusion along the nanowire sidewalls in the presence of In.

Woelz, M.; Kaganer, V. M.; Brandt, O.; Geelhaar, L.; Riechert, H.

2011-06-27T23:59:59.000Z

293

Deep-Level Transient Spectroscopy in InGaAsN Lattice-Matched to GaAs: Preprint  

Science Conference Proceedings (OSTI)

This conference paper describes the deep-level transient spectroscopy (DLTS) measurements have been performed on the quaternary semiconductor InGaAsN. A series of as-grown, metal-organic chemical vapor deposited samples having varying composition were grown and measured. A GaAs sample was used as a baseline for comparison. After adding only In to GaAs, we did not detect significant additional defects; however, adding N and both N and In led to larger hole-trap peaks and additional electron-trap peaks in the DLTS data. The samples containing about 2% N, with and without about 6% In, had electron traps with activation energies of about 0.2 and 0.3 eV. A sample with 0.4% N had an electron trap with an activation energy of 0.37 eV.

Johnston, S. W.; Ahrenkiel, R. K.; Friedman, D. J.; Kurtz, S. R.

2002-05-01T23:59:59.000Z

294

Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets  

Science Conference Proceedings (OSTI)

Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

Chu, Kuei-Yi [National Cheng-Kung University, Institute of Microelectronics, Department of Electrical Engineering (China); Chiang, Meng-Hsueh, E-mail: mhchiang@niu.edu.tw; Cheng, Shiou-Ying, E-mail: sycheng@niu.edu.tw [National II an University, Department of Electronic Engineering (China); Liu, Wen-Chau [National Cheng-Kung University, Institute of Microelectronics, Department of Electrical Engineering (China)

2012-02-15T23:59:59.000Z

295

Ms Linda Cerrone | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Ms. Linda Cerrone Ms. Linda Cerrone Scientific User Facilities (SUF) Division SUF Home About Staff Listings/Contact Information What's New User Facilities Accelerator & Detector Research & Development Principal Investigators' Meetings Scientific Highlights Construction Projects BES Home Staff Listings/Contact Information Ms. Linda Cerrone Print Text Size: A A A RSS Feeds FeedbackShare Page Cerrone Program Support Specialist Scientific User Facilities Division Office of Basic Energy Sciences SC-22.3/Germantown Building U.S. Department of Energy 1000 Independence Avenue, SW Washington, D.C. 20585-1290 E-Mail: Linda.Cerrone@science.doe.gov Phone: (301) 903-0064 or (301) 903-0065 Fax: (301) 903-1690 Ms. Cerrone worked as administrative support specialist/office manager within the Department of Energy's (DOE's) Office of Independent

296

Modern Methods for Lipid AnalysisChapter 5 Analysis of Fatty Acids by APCI-MS  

Science Conference Proceedings (OSTI)

Modern Methods for Lipid Analysis Chapter 5 Analysis of Fatty Acids by APCI-MS Methods and Analyses eChapters Methods - Analyses Books AOCS Press 9906940E971125747386725393F5E58E AOCS Press Downloadable pdf ...

297

U-032: Microsoft Security Bulletin Windows TCP/IP MS11-083 - Critical |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

32: Microsoft Security Bulletin Windows TCP/IP MS11-083 - 32: Microsoft Security Bulletin Windows TCP/IP MS11-083 - Critical U-032: Microsoft Security Bulletin Windows TCP/IP MS11-083 - Critical November 9, 2011 - 1:00pm Addthis PROBLEM: Microsoft Security Bulletin Windows TCP/IP MS11-083 - Critical. PLATFORM: Windows XP Service Pack 3 Windows XP Professional x64 Edition Service Pack 2 Windows Server 2003 Service Pack 2 Windows Server 2003 x64 Edition Service Pack 2 Active Directory Windows Server 2003 with SP2 for Itanium-based Systems Windows Vista Service Pack 2 Windows Vista x64 Edition Service Pack 2 Windows Server 2008 for 32-bit Systems Service Pack 2 Windows Server 2008 for x64-based Systems Service Pack 2 Windows 7 for 32-bit Systems Windows 7 for 32-bit Systems Service Pack 1 Windows 7 for x64-based Systems

298

Mapping the Subcellular Proteome of Shewanella oneidensis MR-1 using Sarkosyl-based fractionation and LC-MS/MS protein identification  

Science Conference Proceedings (OSTI)

A simple and effective subcellular proteomic method for fractionation and analysis of gram-negative bacterial cytoplasm, periplasm, inner, and outer membranes was applied to Shewanella oneidensis to gain insight into its subcellular architecture. A combination of differential centrifugation, Sarkosyl solubilization, and osmotic lysis was used to prepare subcellular fractions. Global differences in protein fractions were observed by SDS PAGE and heme staining, and tryptic peptides were analyzed using high-resolution LC-MS/MS. Compared to crude cell lysates, the fractionation method achieved a significant enrichment (average ~2-fold) in proteins predicted to be localized to each subcellular fraction. Compared to other detergent, organic solvent, and density-based methods previously reported, Sarkosyl most effectively facilitated separation of the inner and outer membranes and was amenable to mass spectrometry, making this procedure ideal for probing the subcellular proteome of gram-negative bacteria via LC-MS/MS. With 40% of the observable proteome represented, this study has provided extensive information on both subcellular architecture and relative abundance of proteins in S. oneidensis and provides a foundation for future work on subcellular organization and protein-membrane interactions in other gram-negative bacteria.

Brown, Roslyn N.; Romine, Margaret F.; Schepmoes, Athena A.; Smith, Richard D.; Lipton, Mary S.

2010-07-19T23:59:59.000Z

299

Guideline for the Procurement of General Electric MS 9001 Models B/E Gas Turbine Parts  

Science Conference Proceedings (OSTI)

In recent years, a number of aftermarket component suppliers have begun offering replacement first, second, and third stage buckets and nozzles for the General Electric (GE) MS 9001B and its related newer version MS 9001E gas turbine, more commonly referred to as the 9B and 9E models. Several different designs, materials, and casting processes have been offered for these components for operation at different full-load firing temperatures. This procurement guideline is intended for use by power producers ...

2008-03-03T23:59:59.000Z

300

Guideline for the Procurement of General Electric MS6001 Model B Gas Turbine Parts  

Science Conference Proceedings (OSTI)

In recent years, a number of aftermarket component suppliers have begun offering replacement 1st, 2nd, and 3rd stage buckets and nozzles for the General Electric (GE) MS6001 Model B gas turbine. Several different designs, materials, and casting processes have been offered for these components for operation over at different peak firing temperatures. This procurement guideline is intended to provide owners with the requirements necessary to procure all three stages of buckets and nozzles for a GE MS6001 M...

2007-03-22T23:59:59.000Z

Note: This page contains sample records for the topic "ga ky ms" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Microsoft PowerPoint - SRNL-MS-2010-00070_Flach_S08.ppt  

NLE Websites -- All DOE Office Websites (Extended Search)

0 0 Modeling of Engineered Systems in the Vadose Zone Greg Flach 13 April 2010 Richland WA Performance Assessment Community of Practice Technical Exchange 2 SRNL-MS-2010-00070 Outline Engineered Systems at the Savannah River Site Key failure / degradation modes Modeling philosophy Modeling practice Opportunities for ASCEM and CBP 3 SRNL-MS-2010-00070 Engineered systems Solid waste disposal, E-area

302

An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992  

DOE Green Energy (OSTI)

This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The ``cycled`` organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al{sub 0.34}Ga{sub 0.66}As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

Venkatasubramanian, R. [Research Triangle Inst., Research Triangle Park, NC (United States)

1993-01-01T23:59:59.000Z

303

Ultra High p-doping Material Research for GaN Based Light Emitters  

Science Conference Proceedings (OSTI)

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

Vladimir Dmitriev

2007-06-30T23:59:59.000Z

304

Using GA-ANN algorithm to predicate coal bump energy  

Science Conference Proceedings (OSTI)

A GA-ANN network was constructed for preidcating coal bump energy, based on the 300 training samples form simulated results with PFC2D software for different coal particle stiffness. It was tested that the average relative error of fitted-output value ... Keywords: artificial neural network, coal bump, energy, genetic algorithm, predication

Yunliang Tan; Tongbin Zhao; Zhigang Zhao

2009-06-01T23:59:59.000Z

305

Properties of H, O and C in GaN  

DOE Green Energy (OSTI)

The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

Pearton, S.J.; Abernathy, C.R.; Lee, J.W. [Univ. of Florida, Gainesville, FL (United States)] [and others

1996-04-01T23:59:59.000Z

306

Optimization on Seawater Desulfurization Efficiency Based on LSSVM-GA  

Science Conference Proceedings (OSTI)

Seawater flue gas Desulfurization (SFGD) was adopted in many coal-fired power plants of littoral for its low cost and high desulfurization efficiency. Operating Parameters would seriously affect SFGD efficiency, the desulfurization efficiency can be ... Keywords: SFGD, desulfurization efficiency, LSSVM, GA, optimization

Liu Ding-ping; Li Xiao-wei

2010-10-01T23:59:59.000Z

307

Development of ZnO:Ga as an Ultrafast Scintillator  

DOE Green Energy (OSTI)

We report on several methods for synthesizing the ultra-fast scintillator ZnO(Ga), and measurements of the resulting products. This material has characteristics that make it an excellent alpha detector for tagging the time and direction of individual neutrons produced by t-d and d-d neutron generators (associated particle imaging). The intensity and decay time are strongly dependent on the method used for dopant incorporation. We compare samples made by diffusion of Ga metal to samples made by solid state reaction between ZnO and Ga2O3 followed by reduction in hydrogen. The latter is much more successful and has a pure, strong near-band-edge fluorescence and an ultra-fast decay time of the x-ray-excited luminescence. The luminescence increases dramatically as the temperature is reduced to 10K. We also present results of an alternate low-temperature synthesis that produces luminescent particles with a more uniform size distribution. We examine possible mechanisms for the bright near-band-edge scintillation and favor the explanation that it is due to the recombination of Ga3+ donor electrons with ionization holes trapped on H+ ion acceptors.

Bourret-Courchesne, E.D.; Derenzo, S.E.; Weber, M.J.

2008-12-10T23:59:59.000Z

308

Low cost high power GaSB photovoltaic cells  

Science Conference Proceedings (OSTI)

High power density and high capacity factor are important attributes of a thermophotovoltaics (TPV) system and GaSb cells are enabling for TPV systems. A TPV cogeneration unit at an off grid site will compliment solar arrays producing heat and electricity on cloudy days with the solar arrays generating electricity on sunny days. Herein

Lewis M. Fraas; Han X. Huang; Shi-Zhong Ye; She Hui; James Avery; Russell Ballantyne

1997-01-01T23:59:59.000Z

309

Low cost high power GaSb thermophotovoltaic cells  

Science Conference Proceedings (OSTI)

High power density and high capacity factor are important attributes of a TPV system and GaSb cells are enabling for TPV systems. A TPV cogeneration unit at an off grid site will compliment solar arrays producing heat and electricity on cloudy days with the solar arrays generating electricity on sunny days. Herein

Lewis M. Fraas; Han X. Huang; Shi-Zhong Ye; James Avery; Russell Ballantyne

1997-01-01T23:59:59.000Z

310

AlGaAsSb buffer/barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliability  

Science Conference Proceedings (OSTI)

Keywords: AlGaAsSb, Hall elements, InAs, Sb, buffer/barriers, deep quantum well, field effect transistors, reliability

S. Miya; S. Muramatsu; N. Kuze; K. Nagase; T. Iwabuchi; A. Ichii; M. Ozaki; I. Shibasaki

1996-03-01T23:59:59.000Z

311

Characterization and device performance of (AgCu)(InGa)Se2 absorber layers  

DOE Green Energy (OSTI)

The study of (AgCu)(InGa)Se2 absorber layers is of interest in that Ag-chalcopyrites exhibit both wider bandgaps and lower melting points than their Cu counterparts. (AgCu)(InGa)Se2 absorber layers were deposited over the composition range 0 < Ag/(Ag+Cu) < 1 and 0.3 < Ga/(In+Ga) < 1.0 using a variety of elemental co-evaporation processes. Films were found to be singlephase over the entire composition range, in contrast to prior studies. Devices with Ga content 0.3 < Ga/(In+Ga) <0.5 tolerated Ag incorporation up to Ag/(Ag+Cu) = 0.5 without appreciable performance loss. Ag-containing films with Ga/(In+Ga) = 0.8 showed improved device characteristics over Cu-only control samples, in particular a 30-40% increase in short-circuit current. An absorber layer with composition Ag/(Ag+Cu) = 0.75 and Ga/(In+Ga) = 0.8 yielded a device with VOC = 890 mV, JSC = 20.5mA/cm2, fill factor = 71.3%, and ? = 13.0%.

Hanket, Gregory; Boyle, Jonathan H.; Shafarman, William N.

2009-06-08T23:59:59.000Z

312

Category:Utility Rate Impacts on PV Economics By Location | Open Energy  

Open Energy Info (EERE)

Utility Rate Impacts on PV Economics By Location Utility Rate Impacts on PV Economics By Location Jump to: navigation, search Impact of Utility Rates on PV Economics Montgomery, AL Little Rock, AR Flagstaff, AZ Phoenix, AZ Tucson, AZ Arcata, CA LA, CA San Francisco, CA Boulder, CO Eagle County, CO Pueblo, CO Bridgeport, CT Wilmington, DE Miami, FL Tampa, FL Atlanta, GA Savannah, GA Des Moines, IA Mason, IA Boise, ID Chicago, IL Springfield, IL Indianapolis, IN Goodland, KS Wichita, KS Lexington, KY New Orleans, LA Shreveport, LA Boston, MA Baltimore, MD Caribou, ME Portland, ME Detroit, MI Houghton-Lake, MI Traverse City, MI International Falls, MN Minneapolis, MN Kansas City, MO Jackson, MS Billings, MT Greensboro, NC Wilmington, NC Bismarck, ND Minot, ND Omaha, NE Concord, NH Atlantic City, NJ Albuquerque, NM Las Vegas, NV Reno, NV New York, NY

313

Optical and quantum efficiency analysis of (Ag,Cu)(In,Ga)Se2 absorber layers  

DOE Green Energy (OSTI)

(Ag,Cu)(In,Ga)Se2 thin films have been deposited by elemental co-evaporation over a wide range of compositions and their optical properties characterized by transmission and reflection measurements and by relative shift analysis of quantum efficiency device measurements. The optical bandgaps were determined by performing linear fits of (?h?)2 vs. h?, and the quantum efficiency bandgaps were determined by relative shift analysis of device curves with fixed Ga/(In+Ga) composition, but varying Ag/(Cu+Ag) composition. The determined experimental optical bandgap ranges of the Ga/(In+Ga) = 0.31, 0.52, and 0.82 groups, with Ag/(Cu+Ag) ranging from 0 to 1, were 1.19-1.45 eV, 1.32-1.56 eV, and 1.52-1.76 eV, respectively. The optical bowing parameter of the different Ga/(In+Ga) groups was also determined.

Boyle, Jonathan; Hanket, Gregory; Shafarman, William

2009-06-09T23:59:59.000Z

314

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

315

Electroluminescence and Transmission Electron Microscopy Characterization of Reverse-Biased AlGaN/GaN Devices  

Science Conference Proceedings (OSTI)

Reverse-bias stress testing has been applied to a large set of more than 50 AlGaN/GaN high electron mobility transistors, which were fabricated using the same process but with different values of the AlN mole fraction and the AlGaN barrier-layer thickness, as well as different substrates (SiC and sapphire). Two sets of devices having different defect types and densities, related to the different growth conditions and the choice of nucleation layer, were also compared. When subjected to gate drain (or gate-to-drain and source short-circuited) reverse-bias testing, all devices presented the same time-dependent failure mode, consisting of a significant increase in the gate leakage current. This failure mechanism occurred abruptly during step-stress experiments when a certain negative gate voltage, or critical voltage, was exceeded or, during constant voltage tests, at a certain time, defined as time to breakdown. Electroluminescence (EL) microscopy was systematically used to identify localized damaged areas that induced an increase of gate reverse current. This current increase was correlated with the increase of EL intensity, and significant EL emission during tests occurred only when the critical voltage was exceeded. Focused-ion-beam milling produced cross-sectional samples suitable for electron microscopy observation at the sites of failure points previously identified by EL microscopy. In highdefectivity devices, V-defects were identified that were associated with initially high gate leakage current and corresponding to EL spots already present in untreated devices. Conversely, identification of defects induced by reverse-bias testing proved to be extremely difficult, and only nanometer-size cracks or defect chains, extending vertically from the gate edges through the AlGaN/GaN heterojunction, were found. No signs of metal/semiconductor interdiffusion or extended defective areas were visible.

Cullen, David A [ORNL; Smith, David J [Arizona State University; Passaseo, Adriana [Consiglio Nazionale delle Ricerche; Tasco, Vittorianna [Consiglio Nazionale delle Ricerche; Stocco, Antonio [Universita di Padova; Meneghini, Matteo [Universita di Padova; Meneghesso, Gaudenzio [Universita di Padova; Zanoni, Enrico [Universita di Padova

2013-01-01T23:59:59.000Z

316

ANALYSIS OF SULFONATES IN AQUEOUS SAMPLES BY ION-PAIR LC/ESI-MS/MS WITH IN-SOURCE CID FOR ADDUCT PEAK ELIMINATION  

SciTech Connect

Determination of low-molecular-weight organic sulfonates (e.g. taurine and cysteic acid) in aqueous solutions is important in many applications of biological, environmental and pharmaceutical sciences. These compounds are difficult to be determined by commonly used reversed-phase liquid chromatographic separation combined with UV-Visible detection because of their high solubility and the lack chromophoric moieties. Here the authors report a method combining ion-pair liquid chromatography and electrospray ionization tandem mass spectrometry (IPLC/ESI-MS/MS)for determining sulfonates. The ability of low-molecular-weight sulfonates to form ion-pairs with quaternary ammonium cations in aqueous solutions allowed LC separation with a C{sub 18} column. Detection of the sulfonates was accomplished with ESI-MS that lends a universal mode of mass detection for polar, water soluble compounds. An in-source collision induced dissociation (CID) was applied to eliminate the adduct peaks in mass spectra. Characteristic marker ions showed in the second stage mass spectra lent a method for identifying sulfonates.

OUYANG,S.; VAIRAVAMURTHY,M.A.

1999-06-13T23:59:59.000Z

317

GaSb substrates with extended IR wavelength for advanced space based applications  

SciTech Connect

GaSb substrates have advantages that make them attractive for implementation of a wide range of infrared (IR) detectors with higher operating temperatures for stealth and space based applications. A significant aspect that would enable widespread commercial application of GaSb wafers for very long wavelength IR (VLWIR) applications is the capability for transmissivity beyond 15 m. Due largely to the GaSb (antisite) defect and other point defects in undoped GaSb substrates, intrinsic GaSb is still slightly p-type and strongly absorbs in the VLWIR. This requires backside thinning of the GaSb substrate for IR transmissivity. An extremely low n-type GaSb substrate is preferred to eliminate thinning and provide a substrate solution for backside illuminated VLWIR devices. By providing a more homogeneous radial distribution of the melt solute to suppress GaSb formation and controlling the cooling rate, ultra low doped n:GaSb has been achieved. This study examines the surface properties and IR transmission spectra of ultra low doped GaSb substrates at both room and low temperatures. Atomic force microscopy (AFM), homoepitaxy by MBE, and infrared Fourier transform (FTIR) analysis was implemented to examine material quality. As compared with standard low doped GaSb, the ultra low doped substrates show over 50% transmission and consistent wavelength transparency past 23 m with improved %T at low temperature. Homoepitaxy and AFM results indicate the ultra low doped GaSb has a low thermal desorbtion character and qualified morphology. In summary, improvements in room temperature IR transmission and extended wavelength characteristics have been shown consistently for ultra low doped n:GaSb substrates.

Allen, Lisa P.; Flint, Patrick; Dallas, Gordon; Bakken, Daniel; Blanchat, Kevin; Brown, Gail J.; Vangala, Shivashankar R.; Goodhue, William D.; Krishnaswami, Kannan

2009-05-01T23:59:59.000Z

318

Two-color picosecond experiments on anti-Stokes photoluminescence in GaAs/AlGaAs asymmetric double quantum wells  

E-Print Network (OSTI)

quantum wells S. C. Hohng and D. S. Kima) Department of Physics and Condensed Matter Research Institute in GaAs/AlGaAs asymmetric double quantum wells. Direct evidence for forbidden absorption is shown heterojunctions and asymmetric double quan- tum wells was found and its origin is still being hotly de- bated

Hohng, Sung Chul

319

Light output enhancement of InGaN/GaN light-emitting diodes with contrasting indium tin-oxide nanopatterned structures  

Science Conference Proceedings (OSTI)

Various nanopatterns on the transparent conducting indium tin oxide (ITO) layer are investigated to enhance the light extraction efficiency of the InGaN/GaN light-emitting diodes (LEDs). Triangular, square, and circular nanohole patterns with the square ...

Sang Hyun Jung, Keun Man Song, Young Su Choi, Hyeong-Ho Park, Hyun-Beom Shin, Ho Kwan Kang, Jaejin Lee

2013-01-01T23:59:59.000Z

320

Optically pumped InxGa???xN/InyGa???yN multiple quantum well vertical cavity surface emitting laser operating at room temperature.  

E-Print Network (OSTI)

Room temperature vertical cavity lasing at the wavelength of 433nm has been successfully realized in InxGa???xN/InyGa???yN multiple quantum well without Bragg mirrors under photo-excitation. At high excitation intensity, ...

Chen, Zhen

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While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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321

Ms Van T Nguyen | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Van T Nguyen Van T Nguyen Scientific User Facilities (SUF) Division SUF Home About Staff Listings/Contact Information What's New User Facilities Accelerator & Detector Research & Development Principal Investigators' Meetings Scientific Highlights Construction Projects BES Home Staff Listings/Contact Information Ms. Van T Nguyen Print Text Size: A A A RSS Feeds FeedbackShare Page Van T. Nguyen Program Manager Facility Coordination, Metrics, and Assessment Office of Basic Energy Sciences SC-22.3/Germantown Building U.S. Department of Energy 1000 Independence Avenue, SW Washington, D.C. 20585-1290 E-Mail: Van.Nguyen@science.doe.gov Phone: (301) 903-3976 Fax: (301) 903-1690 Ms. Nguyen joined the Scientific User Facilities Division of the Office of Basic Energy Sciences (BES) in July 2008. Prior to joining BES, Ms. Nguyen

322

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth  

Science Conference Proceedings (OSTI)

Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f{sub t} and f{sub max} in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 OMEGA mum to a GaN 2DEG.

Dasgupta, Sansaptak; Nidhi,; Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K. [Department of ECE, University of California, Santa Barbara, California 93106 (United States) and Department of Materials, University of California, Santa Barbara, California 93106 (United States)

2010-04-05T23:59:59.000Z

323

GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

A GaN based depletion mode metal oxide semiconductor field effect transistor (MOSFET) was demonstrated using Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as the gate dielectric. The MOS gate reverse breakdown voltage was > 35V which was significantly improved from 17V of Pt Schottky gate on the same material. A maximum extrinsic transconductance of 15 mS/mm was obtained at V{sub ds} = 30 V and device performance was limited by the contact resistance. A unity current gain cut-off frequency, f{sub {tau}}, and maximum frequency of oscillation, f{sub max} of 3.1 and 10.3 GHz, respectively, were measured at V{sub ds} = 25 V and V{sub gs} = {minus}20 V.

Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Schurman, M.J.

1999-03-02T23:59:59.000Z

324

Dynamic Model of Hydrogen in GaN  

NLE Websites -- All DOE Office Websites (Extended Search)

Dynamic Model of Hydrogen in GaN by S. M. Myers and A. F. Wright Motivation-Hydrogen is incorporated into p-type GaN during MOCVD growth, producing highly stable passivation of the Mg acceptors. Complete acceptor activation by thermal H release requires temperatures that threaten material integrity, prompting compromises in device processing. At lower temperatures, forward bias of p-n junctions or electron-beam irradiation produces a metastable, reversible activation without H release. To understand and control such effects, we are developing a mathematical model of H behavior wherein state energies from density-functional theory are employed in diffusion-reaction equations. Previously, we used the greatly simplifying assumptions of local equilibrium among states

325

A GaAs transceiver chip for optical data transmission  

SciTech Connect

The present article describes a transceiver VLSI chip for optical data transmission, at 1 Gbit/s (1.4 Gbit/s in selected production), made in GaAs technology. The transceiver makes the parallel-to-serial and serial-to-parallel conversion as well as the encoding and decoding of 32 bit data words. The circuit operates in a completely asynchronous mode, allowing the possibility of switching on-off the transmission in few nsec and of using the transceiver not only in point-to-point topologies, but also in flooding topologies (i.e. star connections). The radiation hardness and the relatively low power consumption, respect to TTL, of the GaAs, extend the use of the chip to a large number of applications in present and future high energy physics experimental apparatus.

Mirabelli, G.; Petrolo, E.; Valente, E. (Ist. Nazionale di Fisica Nucleare, Roma (Italy)); Cardarelli, R.; Santonico, R. (Sezione di Roma 2 and Univ. di Roma (Italy). Ist. Nazionale di Fisica Nucleare); Ferrer, M.L. (Lab. Nazionali di Frascati (Italy). Ist. Nazionale di Fisica Nucleare)

1993-08-01T23:59:59.000Z

326

Method of plasma etching Ga-based compound semiconductors  

SciTech Connect

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

Qiu, Weibin; Goddard, Lynford L.

2012-12-25T23:59:59.000Z

327

AlGaAs diode pumped tunable chromium lasers  

DOE Patents (OSTI)

An all-solid-state laser system is disclosed wherein the laser is pumped in the longwave wing of the pump absorption band. By utilizing a laser material that will accept unusually high dopant concentrations without deleterious effects on the crystal lattice one is able to compensate for the decreased cross section in the wing of the absorption band, and the number of pump sources which can be used with such a material increases correspondingly. In a particular embodiment a chromium doped colquiriite-structure crystal such as Cr:LiSrAlF.sub.6 is the laser material. The invention avoids the problems associated with using AlGaInP diodes by doping the Cr:LiSrAlF.sub.6 heavily to enable efficient pumping in the longwave wing of the absorption band with more practical AlGaAs diodes.

Krupke, William F. (Pleasanton, CA); Payne, Stephen A. (Castro Valley, CA)

1992-01-01T23:59:59.000Z

328

CsBr/GaN Heterojunction Photoelectron Source  

Science Conference Proceedings (OSTI)

Experimental results on a new CsBr/GaN heterojunction photocathode structure are presented. The results indicate a fourfold improvement in photoyield relative to CsBr/Cr photocathodes. A model is presented based on intraband states in CsBr and electron injection from the GaN (with 1% addition of indium) substrate to explain the observed photoyield enhancement. The photocathode lifetime at high current density (>40 A/cm{sup 2}) is limited by laser heating of the small illuminated area. Calculations are presented for sapphire and diamond substrates, indicating a factor of 20 reduction in temperature for the latter. The results are encouraging for the realization of a high photoyield photocathode operating at high current density with long lifetime.

Maldonado, J.R.; /Stanford U., Elect. Eng. Dept.; Liu, Z.; Sun, Y.; /SLAC, SSRL; Schuetter, S.; /Wisconsin U., Madison; Pianetta, P.; /SLAC, SSRL; Pease, R.F.W.; /Stanford U., Elect. Eng. Dept.

2009-04-30T23:59:59.000Z

329

Method of plasma etching GA-based compound semiconductors  

DOE Patents (OSTI)

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

Qiu, Weibin; Goddard, Lynford L.

2013-01-01T23:59:59.000Z

330

Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers.  

SciTech Connect

GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the art HEMT transistors and amplifiers.

Kurtz, Steven Ross; Follstaedt, David Martin; Wright, Alan Francis; Baca, Albert G.; Briggs, Ronald D.; Provencio, Paula Polyak; Missert, Nancy A.; Allerman, Andrew Alan; Marsh, Phil F.; Koleske, Daniel David; Lee, Stephen Roger; Shul, Randy John; Seager, Carleton Hoover; Tigges, Christopher P.

2005-12-01T23:59:59.000Z

331

X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure  

SciTech Connect

High-resolution X-ray diffraction analysis and scanning confocal Raman spectroscopy are used to study the spatial distribution of strains in the In{sub x}Ga{sub 1-x}N/GaN layers and structural quality of these layers in a multilayered light-emitting diode structure produced by metal-organic chemical vapor deposition onto (0001)-oriented sapphire substrates. It is shown that elastic strains almost completely relax at the heterointerface between the thick GaN buffer layer and In{sub x}Ga{sub 1-x}N/GaN buffer superlattice. It is established that the GaN layers in the superlattice are in a stretched state, whereas the alloy layers are in a compressed state. In magnitude, the stretching strains in the GaN layers are lower than the compressive strains in the InGaN layers. It is shown that, as compared to the buffer layers, the layers of the superlattice contain a smaller number of dislocations and the distribution of dislocations is more randomly disordered. In micro-Raman studies on scanning through the thickness of the multilayered structure, direct evidence is obtained for the asymmetric gradient distributions of strains and crystal imperfections of the epitaxial nitride layers along the direction of growth. It is shown that the emission intensity of the In{sub x}Ga{sub 1-x}N quantum well is considerably (more than 30 times) higher than the emission intensity of the GaN barrier layers, suggesting the high efficiency of trapping of charge carriers by the quantum well.

Strelchuk, V. V., E-mail: Strelch@isp.kiev.ua; Kladko, V. P.; Avramenko, E. A.; Kolomys, O. F.; Safryuk, N. V.; Konakova, R. V. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine); Yavich, B. S., E-mail: byavich@soptel.ru [ZAO Svetlana-Optoelectronics (Russian Federation); Valakh, M. Ya.; Machulin, V. F.; Belyaev, A. E. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)

2010-09-15T23:59:59.000Z

332

{sup 99}Tc bioassay by inductively coupled plasma mass spectrometry (ICP-MS)  

Science Conference Proceedings (OSTI)

A means of analyzing {sup 99}Tc in urine by inductively coupled plasma mass spectrometry (ICP-MS) has been developed. Historically, {sup 99}Tc analysis was based on the radiometric detection of the 293 keV E{sub Max} beta decay product by liquid scintillation or gas flow proportional counting. In a urine matrix, the analysis of{sup 99}Tc is plagued with many difficulties using conventional radiometric methods. Difficulties originate during chemical separation due to the volatile nature of Tc{sub 2}O{sub 7} or during radiation detection due to color or chemical quenching. A separation scheme for {sup 99}Tc detection by ICP-MS is given and is proven to be a sensitive and robust analytical alternative. A comparison of methods using radiometric and mass quantitation of {sup 99}Tc has been conducted in water, artificial urine, and real urine matrices at activity levels between 700 and 2,200 dpm/L. Liquid scintillation results based on an external standard quench correction and a quench curve correction method are compared to results obtained by ICP-MS. Each method produced accurate results, however the precision of the ICP-MS results is superior to that of liquid scintillation results. Limits of detection (LOD) for ICP-MS and liquid scintillation detection are 14.67 and 203.4 dpm/L, respectively, in a real urine matrix. In order to determine the basis for the increased precision of the ICP-MS results, the detection sensitivity for each method is derived and measured. The detection sensitivity for the {sup 99}Tc isotope by ICP-MS is 2.175 x 10{sup {minus}7} {+-} 8.990 x 10{sup {minus}9} and by liquid scintillation is 7.434 x 10{sup {minus}14} {+-} 7.461 x 10{sup {minus}15}. A difference by seven orders of magnitude between the two detection systems allows ICP-MS samples to be analyzed for a period of 15 s compared to 3,600 s by liquid scintillation counting with a lower LOD.

Lewis, L.A.

1998-05-01T23:59:59.000Z

333

Figure 23. Average price of natural gas delivered to U.S. commercial...  

Annual Energy Outlook 2012 (EIA)

Natural and Supplemental Gas Supply and Disposition," and Form EIA-910, "Monthly Natural Gas Marketer Survey." IN OH TN WV VA KY MD PA NY VT NH MA CT ME RI DE DC NC SC GA FL NJ AL...

334

Microsoft Word - figure_22.doc  

Gasoline and Diesel Fuel Update (EIA)

Natural and Supplemental Gas Supply and Disposition," and Form EIA-910, "Monthly Natural Gas Marketer Survey." IN OH TN WV VA KY MD PA NY VT NH MA CT ME RI DE DC NC SC GA FL NJ AL...

335

Microsoft Word - figure_21.doc  

Annual Energy Outlook 2012 (EIA)

of Natural and Supplemental Gas Supply and Disposition," and Form EIA-910, "Monthly Natural Gas Marketer Survey." IN OH TN WV VA KY MD PA NY VT NH MA CT ME RI DE DC NC SC GA...

336

UV-Photoassisted Etching of GaN in KOH  

SciTech Connect

The etch rate of GaN under W-assisted photoelectrochemical conditions in KOH solutions is found to be a strong function of illumination intensity, solution molarity, sample bias and material doping level. At low e-h pair generation rates, grain boundaries are selectively etched, while at higher illumination intensities etch rates for unintentionally doped (n - 3x 10^12Gcm-3) GaN are 2 1000 .min-l. The etching is diffusion limited under our conditions with an activation energy of - 0.8kCal.mol-1. The etched surfaces are rough, but retain their stoichiometry. PEC etching is found to selectively reveal grain boundaries in GaN under low light illumination conditions. At high lamp powers the rates increase with sample temperature and the application of bias to the PEC cell, while they go through a maximum with KOH solution molarity. The etching is diffusion-limited, producing rough surface morphologies that are suitable in a limited number of device fabrication steps. The surfaces however appear to remain relatively close to their stoichiometric composition.

Abernathy, C.R.; Auh, K.H.; Cho, H.; Donovan, S.M.; Han, J.; Lambers, E.S.; Pearton, S.J.; Ren F.; Shul, R.J.

1998-11-12T23:59:59.000Z

337

Comparative study of GaN growth process by MOVPE  

SciTech Connect

A comparative study of two different MOVPE reactors used for GaN growth is presented. Computational fluid dynamics (CFD) was used to determine common gas phase and fluid flow behaviors within these reactors. This paper focuses on the common thermal fluid features of these two MOVPE reactors with different geometries and operating pressures that can grow device-quality GaN-based materials. The study clearly shows that several growth conditions must be achieved in order to grow high quality GaN materials. The high-temperature gas flow zone must be limited to a very thin flow sheet above the susceptor, while the bulk gas phase temperature must be very low to prevent extensive pre-deposition reactions. These conditions lead to higher growth rates and improved material quality. A certain range of gas flow velocity inside the high-temperature gas flow zone is also required in order to minimize the residence time and improve the growth uniformity. These conditions can be achieved by the use of either a novel reactor structure such as a two-flow approach or by specific flow conditions. The quantitative ranges of flow velocities, gas phase temperature, and residence time required in these reactors to achieve high quality material and uniform growth are given.

Sun, J.; Redwing, J.M.; Kuech, T.F.

1999-07-01T23:59:59.000Z

338

Low-temperature magnetization of (Ga,Mn) As semiconductors  

E-Print Network (OSTI)

We report on a comprehensive study of the ferromagnetic moment per Mn atom in (Ga,Mn)As ferromagnetic semiconductors. Theoretical discussion is based on microscopic calculations and on an effective model of Mn local moments antiferromagnetically coupled to valence band hole spins. The validity of the effective model over the range of doping studied is assessed by comparing with microscopic tight-binding/coherent-potential approximation calculations. Using the virtual crystal k center dot p model for hole states, we evaluate the zero-temperature mean-field contributions to the magnetization from the hole kinetic and exchange energies, and magnetization suppression due to quantum fluctuations of Mn moment orientations around their mean-field ground state values. Experimental low-temperature ferromagnetic moments per Mn are obtained by superconducting quantum interference device and x-ray magnetic circular dichroism measurements in a series of (Ga,Mn)As semiconductors with nominal Mn doping ranging from similar to 2 to 8%. Hall measurements in as-grown and annealed samples are used to estimate the number of uncompensated substitutional Mn moments. Based on our comparison between experiment and theory we conclude that all these Mn moments in high quality (Ga,Mn)As materials have nearly parallel ground state alignment.

Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL.

2006-01-01T23:59:59.000Z

339

Substrate misorientation effects on epitaxial GaInAsSb  

DOE Green Energy (OSTI)

The effect of substrate misorientation on the growth of GaInAsSb was studied for epilayers grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy. The substrates were (100) misoriented 2 or 6{degree} toward (110), (111)A, or (111)B. The surface is mirror-like and featureless for layers grown with a 6{degree} toward (111)B misorientation, while, a slight texture was observed for layers grown on all other misorientations. The optical quality of layers, as determined by the full width at half-maximum of photoluminescence spectra measured at 4K, is significantly better for layers grown on substrates with a 6{degree} toward (111)B misorientation. The incorporation of Zn as a p-type dopant in GaInAsSb is about 1.5 times more efficient on substrates with 6{degree} toward (111)B misorientation compared to 2{degree} toward (110) misorientation. The external quantum efficiency of thermophotovoltaic devices is not, however, significantly affected by substrate misorientation.

Wang, C.A.; Choi, H.K.; Oakley, D.C. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1997-12-01T23:59:59.000Z

340

Desferal (DFO) induced Ga-67 washout from normal tissue, tumor and abscess in experimental animals  

Science Conference Proceedings (OSTI)

In the experimental animal, desferal (DFO) given intravenously washes out Ga-67 from all tissues. This effect is not uniform: blood activity is reduced very markedly, while liver activity is less affected. Maximal effect of DFO occurs if given close to the Ga-67 injection. When the time interval between the two is increased, the absolute amount of Ga-67 excreted in the urine in excess of the spontaneous excretion is reduced. Administration of DFO does not effect Ga-67 gastrointestinal excretion. In three animal tumor models (EMT-6 sarcoma in Balb/c mice, spontaneous adenocarcinoma in mice, and spontaneous adenocarcinoma in the rabbit) and in sterile abscess-bearing rats, the administration of DFO 24 hrs after Ga-67-citrate improves significantly the target-to-nontarget ratio. Animals given 50 mg/kg DFO I.V. after Ga-67 citrate showed a significant reduction in the whole-body activity as seen in a one-week follow up.

Oster, Z.H.; Som, P.; Atkins, H.L.; Brill, A.B.

1980-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga ky ms" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Low energy electron beam induced vacancy activation in GaN  

Science Conference Proceedings (OSTI)

Experimental evidence on low energy electron beam induced point defect activation in GaN grown by metal-organic vapor phase epitaxy (MOVPE) is presented. The GaN samples are irradiated with a 5-20 keV electron beam of a scanning electron microscope and investigated by photoluminescence and positron annihilation spectroscopy measurements. The degradation of the band-to-band luminescence of the irradiated GaN films is associated with the activation of point defects. The activated defects were identified as in-grown Ga-vacancies. We propose that MOVPE-GaN contains a significant concentration of passive V{sub Ga}-H{sub n} complexes that can be activated by H removal during low energy electron irradiation.

Nykaenen, H.; Suihkonen, S.; Sopanen, M. [Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto (Finland); Kilanski, L. [Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto (Finland); Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/56, 02-668 Warsaw (Poland); Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto (Finland)

2012-03-19T23:59:59.000Z

342

Low-cost, high-efficiency solar cells utilizing GaAs-on-Si technology  

DOE Green Energy (OSTI)

This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, [approximately] 1 [times] 10[sup 5] cm[sup [minus]5], as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 [times]10[sup 7] cm[sup [minus]2]. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells.

Vernon, S.M. (Spire Corp., Bedford, MA (United States))

1993-04-01T23:59:59.000Z

343

Ultra-shallow quantum dots in an undoped GaAs/AlGaAs two-dimensional electron gas  

SciTech Connect

We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2 Multiplication-Sign 10{sup 11} cm{sup -2}) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be gated with surface metallic gates patterned by e-beam lithography, as demonstrated here from single-level transport through a quantum dot showing large charging energies (up to 1.75 meV) and excited state energies (up to 0.5 meV).

Mak, W. Y.; Sfigakis, F.; Beere, H. E.; Farrer, I.; Griffiths, J. P.; Jones, G. A. C.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom)] [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom); Das Gupta, K. [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom) [Cavendish Laboratory, University of Cambridge, Cambridge (United Kingdom); Department of Physics, Indian Institute of Technology Bombay, Mumbai 400076 (India); Klochan, O.; Hamilton, A. R. [School of Physics, University of New South Wales, Sydney (Australia)] [School of Physics, University of New South Wales, Sydney (Australia)

2013-03-11T23:59:59.000Z

344

Terrestrial Concentrator PV Modules Based on GaInP/GaAs/Ge TJ Cells and Minilens Panels  

SciTech Connect

This paper is a description of research activity in the field of cost-effective modules realizing the concept of very high solar concentration with small-aperture area Fresnel lenses and multijunction III-V cells. Structural simplicity and 'all-glass' design are the guiding principles of the corresponding development. The advanced concentrator modules are made with silicone Fresnel lens panels (from 8 up to 144 lenses, each lens is 4 times 4 cm{sup 2} in aperture area) with composite structure. GaInP/GaAs/Ge triple-junction cells with average efficiencies of 31.1 and 34.7% at 1000 suns were used for the modules. Conversion efficiency as high as 26.3% has been measured indoors in a test module using a newly developed large-area solar simulator.

Rumyantsev, V. D.; Sadchikov, N. A.; Chalov, A. E.; Ionova, E. A.; Friedman, D. J.; Glenn, G.

2006-01-01T23:59:59.000Z

345

Quaternary Bismide Alloy ByGa1-yAs1-xBix Lattice Matched to GaAs  

DOE Green Energy (OSTI)

We report on the lattice matched quaternary alloy, B{sub y}Ga{sub 1-y}As{sub 1-x}Bi{sub x} grown by molecular beam epitaxy at conditions conducive to bismuth incorporation. Incorporating a smaller atom (boron) along with the larger atom (bismuth) allows for a reduction of the epi-layer strain and lattice matching to GaAs for compositions of Bi:B{approx_equal}1.3:1. The addition of boron flux does not significantly affect the bismuth incorporation and no change in the band gap energy is observed with increasing boron content. However, excess, non-substitutional boron is incorporated which leads to an increase in hole density, as well as an increase in the density of shallow in-gap states as observed by the loss of localization of photo-excited excitons.

Deaton, D. A.; Ptak, A. J.; Alberi, K.; Mascarenhas, A.

2012-07-15T23:59:59.000Z

346

Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors  

Science Conference Proceedings (OSTI)

The effects of proton irradiation dose on dc characteristics and the reliability of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. The HEMTs were irradiated with protons at a fixed energy of 5 MeV and doses ranging from 109 to 2 1014 cm-2. For the dc characteristics, there was only minimal degradation of saturation drain current (IDSS), transconductance (gm), electron mobility and sheet carrier concentration at doses below 2 1013 cm-2, while the reduction of these parameters were 15%, 9%, 41% and 16.6%, respectively, at a dose of 2 1014 cm-2. At this same dose condition, increases of 37% in drain breakdown voltage (VBR) and of 45% in critical voltage (Vcri) were observed. The improvement of device reliability was attributed to the modification of the depletion region due to the introduction of a higher density of defects after irradiation at a higher dose.

Liu, L. [University of Florida, Gainesville; Cuervo, C.V. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

347

Harmonic Responses in 2DEG AlGaAs/GaAs HEMT Devices Due to Plasma Wave Interaction  

Science Conference Proceedings (OSTI)

Plasma waves are oscillations of electron density in time and space, and in deep submicron field effect transistors, typical plasma frequencies, omega{sub p}, lie in the terahertz range and do not involve any quantum transitions. Hence, using plasma wave excitation for detection and/or generation of THz oscillations is a very promising approach. In this paper, the investigation of plasma wave interaction between the plasma waves propagating in a short-channel High-Electron-Mobility Transistor (HEMT) and the radiated electromagnetic waves was carried out. Experimentally, we have demonstrated the detection of the terahertz (THz) radiation by an AlGaAs/GaAs HEMT up to third harmonic at room temperature and their resonant responses show very good agreement with the calculated results.

Hashim, A. M.; Alias, Q. I. [Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor (Malaysia); Kasai, S.; Hasegawa, H. [Research Center for Integrated Quantum Electronics, Hokkaido University North 12 West 8, Sapporo 060-8628 (Japan)

2010-03-11T23:59:59.000Z

348

Subpicosecond spin relaxation in GaAsSb multiple quantum wells K. C. Hall,a)  

E-Print Network (OSTI)

Subpicosecond spin relaxation in GaAsSb multiple quantum wells K. C. Hall,a) S. W. Leonard, and H quantum wells are measured at 295 K using time-resolved circular dichroism induced by 1.5 m, 100 fs pulses times shorter than those in InGaAs and InGaAsP wells with similar band gaps. The shorter relaxation

Van Driel, Henry M.

349

Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors  

SciTech Connect

A drift-diffusion transport model has been used to examine the performance capabilities of AlGaN/GaN Npn heterojunction bipolar transistors (HBTs). The Gummel plot from the first GaN-based HBT structure recently demonstrated is adjusted with simulation by using experimental mobility and lifetime reported in the literature. Numerical results have been explored to study the effect of the p-type Mg doping and its incomplete ionization in the base. The high base resistance induced by the deep acceptor level is found to be the cause of limiting current gain values. Increasing the operating temperature of the device activates more carriers in the base. An improvement of the simulated current gain by a factor of 2 to 4 between 25 and 300 C agrees well with the reported experimental results. A preliminary analysis of high frequency characteristics indicates substantial progress of predicted rf performances by operating the device at higher temperature due to a reduced extrinsic base resistivity.

MONIER,C.; PEARTON,S.J.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-03-10T23:59:59.000Z

350

Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN  

DOE Green Energy (OSTI)

Etch rates up to 7,000 {angstrom}/min. for GaN are obtained in Cl{sub 2}/H{sub 2}/Ar or BCl{sub 3}/Ar ECR discharges at 1--3mTorr and moderate dc biases. Typical rates with HI/H{sub 2} are about a factor of three lower under the same conditions, while CH{sub 4}/H{sub 2} produces maximum rates of only {approximately}2,000 {angstrom}/min. The role of additives such as SF{sub 6}, N{sub 2}, H{sub 2} or Ar to the basic chlorine, bromine, iodine or methane-hydrogen plasma chemistries are discussed. Their effect can be either chemical (in forming volatile products with N) or physical (in breaking bonds or enhancing desorption of the etch products). The nitrides differ from conventional III-V`s in that bond-breaking to allow formation of the etch products is a critical factor. Threshold ion energies for the onset of etching of GaN, InGaN and InAlN are {ge} 75 eV.

Pearton, S.J.; Vartuli, C.B.; Lee, J.W.; Donovan, S.M.; MacKenzie, J.D.; Abernathy, C.R. [Univ. of Florida, Gainesville, FL (United States); Shul, R.J. [Sandia National Labs., Albuquerque, NM (United States); McLane, G.F. [Army Research Lab., Fort Monmouth, NJ (United States); Ren, F. [AT and T Bell Labs., Murray Hill, NJ (United States)

1996-04-01T23:59:59.000Z

351

Reliability of GaN HEMTs: Electrical and Radiation-induced Failure ...  

Science Conference Proceedings (OSTI)

Symposium, Advanced Materials for Power Electronics, Power Conditioning, and Power Conversion II. Presentation Title, Reliability of GaN HEMTs: Electrical...

352

Thermoelectric Study of InGaN-Based Materials for Thermal Energy ...  

Science Conference Proceedings (OSTI)

Presentation Title, Thermoelectric Study of InGaN-Based Materials for Thermal ... Structural and Thermal Stability Properties of Cellulose Nanocomposites with...

353

X-Ray Studies of GaN Film Grown on Si Using Electrochemical Deposition Techniques  

Science Conference Proceedings (OSTI)

This paper reports on the X-ray studies of GaN thin films deposited on Si (111) substrate at different current density using electrochemical deposition technique. The structural properties of GaN films were studied by X-ray diffraction (XRD). XRD analysis showed that hexagonal wurtzite and cubic zinc blende GaN phases were both deposited on Si (111). The lattice constants, the average size of h-GaN crystals and the in-plane (along a-axis) and out of plane (along c-axis) strains were calculated from XRD analysis.

Al-Heuseen, K.; Hashim, M. R. [Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia (USM), 11800 Minden, Penang (Malaysia)

2011-03-30T23:59:59.000Z

354

M4, Semipolar AlGaN Buffers for Deep Ultraviolet Diode Lasers  

Science Conference Proceedings (OSTI)

On-axis reciprocal space mapping of the graded AlGaN showed tilt at each interface associated ..... New Concepts and Materials for Solar Power Conversion

355

Solidification and Microstructure Evaluation of the Ni-Ga and Co-Ni ...  

Science Conference Proceedings (OSTI)

Ni-Ga binary system is thus one of the basic binary system which forms the dominated ? ... The Effects of Natural and Marangoni Convection on the Resultant...

356

Structure and Composition Peculiarities of GaN/AlN Multiple ...  

Science Conference Proceedings (OSTI)

Thickness of AlN and GaN layers in MQWs (multiple quantum wells) were ... InAs Quantum Dots by Ballistic Electron Emission Microscopy and Spectroscopy.

357

A Paleoenvironmental Study of the 2.7 GA Tumbiana Formation, Fortescue Basin, Western Australia.  

E-Print Network (OSTI)

??A paleoecological and paleoenvironmental study was conducted on the 2.7 Ga Meentheena Member of the Tumbiana Formation, Fortescue Basin, Western Australia. It involved the integrated (more)

Coffey, Jessica

2011-01-01T23:59:59.000Z

358

Cu-Ga-Se Thin Films Prepared by a Combination of Electrodeposition and Evaporation Techniques  

Science Conference Proceedings (OSTI)

Cu-Ga-Se thin films were prepared using a combination of electrodeposition and evaporation techniques. A Cu-Se/Mo/glass precursor thin film was first prepared by galvanostatic electrodeposition. On top of this film three different thicknesses of Ga were deposited by evaporation. The Cu-Ga-Se thin films were formed by annealing the Ga/Cu-Se/Mo/glass thin film configuration in a tubular chamber with Se powder, at different temperatures. Thin films were characterized by X-ray diffraction (XRD), photocurrent spectroscopy (PS), inductively coupled plasma (ICP) analysis, and scanning electron microscopy (SEM). The detailed analysis from X-ray reveals that after annealing at 550 C the CuGaSe{sub 2} phase is formed when the thickness of Ga is 0.25 {mu}m, however at 0.5 {mu}m and 1.0 {mu}m Ga the formation of CuGa{sub 3}Se{sub 5} and CuGa{sub 5}Se{sub 8} phases is observed respectively. Band gap values were obtained using photocurrent spectroscopy.

Fernandez, A. M.; Turner, J. A.

2012-04-01T23:59:59.000Z

359

U-127: Microsoft Security Bulletin MS12-020 - Critical | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

U-127: Microsoft Security Bulletin MS12-020 - Critical U-127: Microsoft Security Bulletin MS12-020 - Critical U-127: Microsoft Security Bulletin MS12-020 - Critical March 16, 2012 - 9:30pm Addthis PROBLEM: Microsoft Security Bulletin MS12-020 - Critical PLATFORM: Windows XP Service Pack 3, Windows XP Professional x64 Edition Service Pack 2, Windows XP Professional x64 Edition Service Pack 2, Windows Server 2003 x64 Edition Service Pack 2, Windows Server 2003 with SP2 for Itanium-based Systems, Windows Vista Service Pack 2, Windows Vista x64 Edition Service Pack 2, Windows Server 2008 for 32-bit Systems Service Pack 2, Windows Server 2008 for x64-based Systems Service Pack 2, Windows Server 2008 for Itanium-based Systems Service Pack 2, Windows 7 for 32-bit Systems, Windows 7 for 32-bit Systems Service Pack 1, Windows 7 for x64-based Systems, Windows 7 for x64-based Systems Service

360

Measurement of lithium isotope ratios by quadrupole-ICP-MS: application to seawater and natural carbonates  

E-Print Network (OSTI)

Measurement of lithium isotope ratios by quadrupole-ICP-MS: application to seawater and natural method for lithium isotope ratio (7 Li/6 Li) determinations with low total lithium consumption ( lithium from all matrix elements using small volume resin (2 ml/3.4 meq AG 50W-X8) and low volume elution

Weston, Ken

Note: This page contains sample records for the topic "ga ky ms" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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361

COAL RESOURCES, POWDER RIVER BASIN By M.S. Ellis,1  

E-Print Network (OSTI)

Chapter PN COAL RESOURCES, POWDER RIVER BASIN By M.S. Ellis,1 G.L. Gunther,2 A.M. Ochs,2 S, Delaware 1999 Resource assessment of selected Tertiary coal beds and zones in the Northern Rocky in the toolbar to return. 1999 Resource assessment of selected Tertiary coal beds and zones in the Northern Rocky

362

COAL RESOURCES OF THE HANNA AND CARBON By M.S. Ellis,1  

E-Print Network (OSTI)

Chapter HN COAL RESOURCES OF THE HANNA AND CARBON BASINS By M.S. Ellis,1 G.L. Gunther,2 A.M. Ochs,2, Delaware 1999 Resource assessment of selected Tertiary coal beds and zones in the Northern Rocky in the toolbar to return. 1999 Resource assessment of selected Tertiary coal beds and zones in the Northern Rocky

363

Texas Engineering Experiment Station 1470 William D. Fitch Pkwy (MS-3579)  

E-Print Network (OSTI)

Texas Engineering Experiment Station 1470 William D. Fitch Pkwy (MS-3579) College Station, TX 77845 and Information Resources for which an exception is needed Software Applications or Operating Systems (Texas Administrative Code §213.30) Web Sites (Texas Administrative Code §206.70) Telecommunications Products (Texas

364

Name Degree Year Notes Thesis title Berg, Ronald J. MS. Zoology 1969  

E-Print Network (OSTI)

thermoregulation of fishes in relation to heated effluent from a steam-electric power plant (Lake Monona plant on the distribution and abundance of zooplankton near the plant's thermal outfall. Engel, Sanford & 1975 MS.Distribution of fishes near Point Beach Power Plant, Lake Michigan; Ph.D. Habitat selection

Sheridan, Jennifer

365

COAL RESOURCES, GREATER GREEN RIVER BASIN By M.S. Ellis,1  

E-Print Network (OSTI)

Chapter GN COAL RESOURCES, GREATER GREEN RIVER BASIN By M.S. Ellis,1 G.L. Gunther,2 A.M. Ochs,2 J of Delaware, Newark, Delaware 1999 Resource assessment of selected Tertiary coal beds and zones here or on this symbol in the toolbar to return. 1999 Resource assessment of selected Tertiary coal

366

MS/NMR: A Structure-Based Approach for Discovering Protein Ligands and for Drug Design  

E-Print Network (OSTI)

MS/NMR: A Structure-Based Approach for Discovering Protein Ligands and for Drug Design by Coupling of size exclusion gel chromatography, mass spectrometry, and NMR to identify bound complexes are then individually assayed by chemical shift perturbations in a 2D 1H-15N HSQC NMR spectrum to verify specific

Powers, Robert

367

Dear Ms  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

[insert address] [insert address] Dear [insert name] : SOLICITATION NUMBER [insert solicitation number] for [insert procurement title/description] In accordance with Federal Acquisition Regulation (FAR) 15.306(c), the Government has established a Competitive Range of offerors for the subject contract solicitation. [insert name of offeror] is not within the established Competitive Range. We have provided the evaluation of your proposal as Attachment 1. In accordance with the FAR 15.505, you may request a debriefing concerning the exclusion of your proposal from the competitive range. We have enclosed a Debriefing Request Form for your use, should you wish to request one (see Attachment 2). Please email a completed copy of

368

Dear Ms  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

oral, as well as written. The main purpose of these discussions is to notify insert name of offeror of deficiencies and weaknesses in its proposal, as well as other aspects of...

369

MS) Systems  

Pacific Northwest National Laboratory (509) 375-6958 ... Healthcare, ... Medical Professional Services Security ...

370

Electron and hole gas in modulation-doped GaAs/Al{sub 1-x}Ga{sub x}As radial heterojunctions  

Science Conference Proceedings (OSTI)

We perform self-consistent Schroedinger-Poisson calculations with exchange and correlation corrections to determine the electron and hole gas in a radial heterojunction formed in a GaAs/AlGaAs core-multi-shell nanowire, which is either n- or p-doped. We show that the electron and hole gases can be tuned to different localizations and symmetries inside the core as a function of the doping density/gate potential. Contrary to planar heterojunctions, conduction electrons do not form a uniform 2D electron gas (2DEG) localized at the GaAs/AlGaAs interface, but rather show a transition between an isotropic, cylindrical distribution deep in the GaAs core (low doping) and a set of six tunnel-coupled quasi-1D channels at the edges of the interface (high doping). Holes, on the other hand, are much more localized at the GaAs/AlGaAs interface. At low doping, they present an additional localization pattern with six separated 2DEGs strips. The field generated by a back-gate may easily deform the electron or hole gas, breaking the sixfold symmetry. Single 2DEGs at one interface or multiple quasi-1D channels are shown to form as a function of voltage intensity, polarity, and carrier type.

Bertoni, Andrea; Royo, Miquel; Mahawish, Farah; Goldoni, Guido [CNR-NANO S3, Istituto Nanoscienze, Via Campi 213/a, 41125 Modena (Italy); Department of Physics, University of Modena and Reggio Emilia and CNR-NANO S3, Istituto Nanoscienze, Via Campi 213/a, 41125 Modena (Italy)

2011-11-15T23:59:59.000Z

371

Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy  

Science Conference Proceedings (OSTI)

Quaternary AlInGaN layers were grown on conventional GaN buffer layers on sapphire by metal organic vapour phase epitaxy at different surface temperatures and different reactor pressures with constant precursor flow conditions. A wide range in compositions within 30-62% Al, 5-29% In, and 23-53% Ga was covered, which leads to different strain states from high tensile to high compressive. From high-resolution x-ray diffraction and Rutherford backscattering spectrometry, we determined the compositions, strain states, and crystal quality of the AlInGaN layers. Atomic force microscopy measurements were performed to characterize the surface morphology. A critical strain value for maximum In incorporation near the AlInGaN/GaN interface is presented. For compressively strained layers, In incorporation is limited at the interface as residual strain cannot exceed an empirical critical value of about 1.1%. Relaxation occurs at about 15 nm thickness accompanied by strong In pulling. Tensile strained layers can be grown pseudomorphically up to 70 nm at a strain state of 0.96%. A model for relaxation in compressively strained AlInGaN with virtual discrete sub-layers, which illustrates the gradually changing lattice constant during stress reduction is presented.

Reuters, Benjamin; Finken, M.; Wille, A.; Kalisch, H.; Vescan, A. [RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074 Aachen (Germany); Juelich Aachen Research Alliance, JARA-FIT, Wilhelm-Johnen-Strasse, 52428 Juelich (Germany); Hollaender, B. [Juelich Aachen Research Alliance, JARA-FIT, Wilhelm-Johnen-Strasse, 52428 Juelich (Germany); Forschungszentrum Juelich GmbH, PGI9-IT, 52425 Juelich (Germany); Heuken, M. [RWTH Aachen University, GaN Device Technology, Sommerfeldstrasse 24, 52074 Aachen (Germany); AIXTRON SE, Kaiserstr. 98, 52134 Herzogenrath (Germany)

2012-11-01T23:59:59.000Z

372

Analysis of the GaInP/GaAs/1-eV/Ge Cell and Related Structures for Terrestrial Concentrator Application: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the analysis of the potential of GaInP/GaAs/1-eV/Ge four-junction solar cell to improve on the efficiency of the state-of-the-art GaInP/GaAs/Ge benchmark. We emphasize three factors: (1) The newly proposed terrestrial concentrator spectrum has a lower ratio of red to blue light than does the old AM1.5 direct standard spectrum. (2) Standard two-layer antireflection coatings do not provide near-zero reflectance over the full spectral range of interest for these devices. (3) GaInNAs junctions used to date for the 1-eV junction have quantum efficiencies less than {approx}75%. These factors all limit the device current, adversely affecting the four-junction efficiency. We discuss strategies for ameliorating this problem, including going to alternate structures such as a GaInP/GaAs/0.9-eV three-junction device.

Friedman, D. J.; Kurtz, S. R.; Geisz, J. F.

2002-05-01T23:59:59.000Z

373

On-Sun Comparison of GaInP2/GaAs Tandem Cells with Top-Cell Thickness Varied  

DOE Green Energy (OSTI)

This study compares the on-sun performance of a set of GaInP2/GaAs tandem cells with different GaInP2 top-cell thicknesses. Because high-efficiency III-V cells are best suited to concentrating photovoltaic (CPV) applications, the cells were mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for an ''air mass 1.5 global'' (AM 1.5G) or a ''low aerosol optical depth'' (Low AOD) spectrum perform the best, and (2) a simple device model using the measured direct spectra as an input gives the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

McMahon, W. E.; Emery, K. A.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

2005-01-01T23:59:59.000Z

374

The consequences of high injected carrier densities on carrier localisation and efficiency droop in InGaN/GaN quantum well structures  

E-Print Network (OSTI)

in the concentration of the randomly distributed In atoms on the optical properties of InGaN/GaN quantum wells. On the basis of this comparison of theory with experiment we attribute the reduction in the S- shape temperature dependence to the saturation... , the buffer layer was grown in a Thomas Swan 6x2 metalorganic vapour-phase epitaxy reactor using trimethyl gallium (TMG), silane (SiH4) and ammonia (NH3) as precursors, with hydrogen as the carrier gas. The GaN buffer layer was deposited at 1020 C on a...

Hammersley, S; Watson-Parris, D; Dawson, P; Godfrey, M; Badcock, T; Kappers, M; McAleese, C; Oliver, R; Humphreys, C

2012-04-18T23:59:59.000Z

375

InGaAsN Solar Cells with 1.0eV Bandgap, Lattice Matched to GaAs  

DOE Green Energy (OSTI)

The design, growth by metal-organic chemical vapor deposition, and processing of an In{sub 0.07}Ga{sub 0.93}As{sub 0.98}N{sub 0.02} solar Al, with 1.0 ev bandgap, lattice matched to GaAs is described. The hole diffusion length in annealed, n-type InGaAsN is 0.6-0.8 pm, and solar cell internal quantum efficiencies > 70% arc obwined. Optical studies indicate that defects or impurities, from InGAsN doping and nitrogen incorporation, limit solar cell performance.

Allerman, A.A.; Banas, J.J.; Gee, J.M.; Hammons, B.E.; Jones, E.D.; Kurtz, S.R.

1998-11-24T23:59:59.000Z

376

K8, HVPE Homoepitaxy of p-Type GaN on n-Type Catalyst Free ...  

Science Conference Proceedings (OSTI)

We present the growth of p-type HVPE GaN using catalyst free GaN nitride nanowires as a lattice matched substrate. The nanowires were grown using plasma...

377

Analisi dei processi di ricombinazione in diodi LED basati su GaN: caratterizzazione ottica e misure DLTS.  

E-Print Network (OSTI)

??In questo lavoro vengono analizzati i processi di ricombinazione nei diodi LED basati su GaN/InGaN mediante caratterizzazione ottica dei dispositivi e misure DLTS. In particolare (more)

La Grassa, Marco

2013-01-01T23:59:59.000Z

378

Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density  

Science Conference Proceedings (OSTI)

Molecular-beam epitaxy is used for growing structures differing in doping technique and doping level and having a high two-dimensional-electron concentration n{sub s} in the quantum well. The effect of doping combining uniform and {delta} doping on the electron-transport properties of heterostructures is investigated. A new type of structure with a two-sided silicon {delta} doping of GaAs transition layers located on the quantum-well boundaries is proposed. The largest value of electron mobility {mu}{sub H} = 1520 cm{sup 2}/(V s) is obtained simultaneously with a high electron density n{sub s} = 1.37 Multiplication-Sign 10{sup 13} cm{sup -2} at 300 K with such a doping. It is associated with decreasing electron scattering by an ionized impurity, which is confirmed by the carried out calculations.

Khabibullin, R. A., E-mail: khabibullin_r@mail.ru; Vasil'evskii, I. S. [MEPHI National Research Nuclear University (Russian Federation); Galiev, G. B.; Klimov, E. A. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Ponomarev, D. S. [MEPHI National Research Nuclear University (Russian Federation); Lunin, R. A.; Kulbachinskii, V. A. [Moscow State University (Russian Federation)

2011-10-15T23:59:59.000Z

379

Large energy absorption in Ni-Mn-Ga/polymer composites  

SciTech Connect

Ferromagnetic shape memory alloys can respond to a magnetic field or applied stress by the motion of twin boundaries and hence they show large hysteresis or energy loss. Ni-Mn-Ga particles made by spark erosion have been dispersed and oriented in a polymer matrix to form pseudo 3:1 composites which are studied under applied stress. Loss ratios have been determined from the stress-strain data. The loss ratios of the composites range from 63% to 67% compared to only about 17% for the pure, unfilled polymer samples.

Feuchtwanger, Jorge; Richard, Marc L.; Tang, Yun J.; Berkowitz, Ami E.; O'Handley, Robert C.; Allen, Samuel M. [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); University of California, San Diego, La Joya, California 92093 (United States); Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2005-05-15T23:59:59.000Z

380

Method of making V.sub.3 Ga superconductors  

DOE Patents (OSTI)

An improved method for producing a vanadium-gallium superconductor wire having aluminum as a component thereof is disclosed, said wire being encased in a gallium bearing copper sheath. The superconductors disclosed herein may be fabricated under normal atmospheres and room temperatures by forming a tubular shaped billet having a core composed of an alloy of vanadium and aluminum and an outer sheath composed of an alloy of copper, gallium and aluminum. Thereafter the entire billet is swage reduced to form a wire therefrom and heat treated to form a layer of V.sub.3 Ga in the interior of the wire.

Dew-Hughes, David (Bellport, NY)

1980-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga ky ms" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Lighting Enhancement of GaN LEDs by Applying p-Type Ni(P):SnO2 ...  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, Materials Science & Technology 2013. Symposium, Multifunctional Oxides. Presentation Title, Lighting Enhancement of GaN LEDs...

382

A3, Depth Resolved Strain and Composition Studies on InGaN and ...  

Science Conference Proceedings (OSTI)

... devices due to its large spontaneous polarization and conduction band offset. ... 620C with fixed beam fluxes of In and Ga under the same nitrogen plasma condition. ... Inexpensive, Non-Toxic Thermoelectric Materials for Waste Heat Recovery ..... Y5, Defect Characterization of InGaN Layer by Deep Level Transient and...

383

Development of a Low Cost Insulated Foil Substrate for Cu(InGaSe)2 Photovoltaics  

DOE Green Energy (OSTI)

The project validated the use of stainless steel flexible substrate coated with silicone-based resin dielectric, developed by Dow Corning Corporation, for Cu(InGa)Se2 based photovoltaics. The projects driving force was the high performance of Cu(InGa)Se2 based photovoltaics coupled with potential cost reduction that could be achieved with dielectric coated SS web substrate.

ERTEN ESER

2012-01-22T23:59:59.000Z

384

High efficiency light emitting diode with anisotropically etched GaN-sapphire interface  

E-Print Network (OSTI)

High efficiency light emitting diode with anisotropically etched GaN- sapphire interface M. H. Lo and optimization of a light-emitting diode projection micro-stereolithography three-dimensional manufacturingGaN micro-light emitting diodes Appl. Phys. Lett. 101, 231110 (2012) A bright cadmium-free, hybrid organic

385

Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution  

E-Print Network (OSTI)

Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution Aurélien David of photonic crystal PhC -assisted gallium nitride light-emitting diodes LEDs to the existence of unextracted a promising but challenging solution towards efficient solid-state lighting. Conventional GaN-based light-emitting

Recanati, Catherine

386

GaN light-emitting diodes with Archimedean lattice photonic crystals Aurlien David,a  

E-Print Network (OSTI)

GaN light-emitting diodes with Archimedean lattice photonic crystals Aurélien David,a Tetsuo Fujii 2005; published online 16 February 2006 We study GaN-based light emitting diodes incorporating light- emitting diodes LEDs , as they could extract the emitted light otherwise trapped inside

Recanati, Catherine

387

Cubic GaN Light Emitting Diode Grown by Metalorganic Vapor-Phase Epitaxy  

E-Print Network (OSTI)

this paper, we report on the doping characteristics of Si and Mg in the growth of cubic GaN by metalorganic vapor-phase epitaxy (MOVPE). We also report the growth of a p-n diode structure made of cubic GaN, and its characterization by electron-beam-induced-current (EBIC) and current injection measurements.

Hidenao Tanaka Member; Vapor-phase Epitaxy; Atsushi Nakadaira

2000-01-01T23:59:59.000Z

388

GaN membrane-supported UV photodetectors manufactured using nanolithographic processes  

Science Conference Proceedings (OSTI)

Membrane GaN metal-semiconductor-metal (MSM) photodetector structures using nanolithographic techniques have been manufactured for the first time. Very low dark currents and unexpected high values for the responsivity have been obtained. It seems that ... Keywords: GaN, Membrane, Nanolithography, Responsivity, SEM

A. Mller; G. Konstantinidis; M. Dragoman; D. Neculoiu; A. Dinescu; M. Androulidaki; M. Kayambaki; A. Stavrinidis; D. Vasilache; C. Buiculescu; I. Petrini; A. Kostopoulos; D. Dascalu

2009-02-01T23:59:59.000Z

389

The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes  

SciTech Connect

Optical and light-emitting diode structures with an active InGaN region containing short-period InGaN/GaN superlattices are studied. It is shown that short-period superlattices are thin two-dimensional layers with a relatively low In content that contain inclusions with a high In content 1-3 nm thick. Inclusions manifest themselves from the point of view of optical properties as a nonuniform array of quantum dots involved in a residual quantum well. The use of short-period superlattices in light-emitting diode structures allows one to decrease the concentration of nonradiative centers, as well as to increase the injection of carriers in the active region due to an increase in the effective height of the AlGaN barrier, which in general leads to an increase in the quantum efficiency of light-emitting diodes.

Sizov, V. S., E-mail: vsizov@mail.ioffe.ru; Tsatsulnikov, A. F.; Sakharov, A. V.; Lundin, W. V.; Zavarin, E. E.; Cherkashin, N. A. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Hytch, M. J. [National Center for Scientific Research (CNRS), Center for Material Elaboration and Structural Studies (CEMES) (France); Nikolaev, A. E. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Mintairov, A. M.; He Yan; Merz, J. L. [University of Notre Dame, EE Department (United States)

2010-07-15T23:59:59.000Z

390

Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts  

Science Conference Proceedings (OSTI)

The paper is concerned with the theoretical and experimental studies of the band structure and electrical properties of InAlAs/InGaAs/InAlAs/InP heterostructures containing a composite InGaAs quantum well with InAs and GaAs nanoinserts. From the Shubnikov-de Haas effect, the effective cyclotron mass m{sub c}* is determined experimentally and calculated with consideration for the nonparabolicity of the electron energy spectrum. An approach to estimation of the effective mass is proposed and tested. The approach is based on weighted averaging of the m{sub c}* of the composite quantum well's constituent materials. A first proposed heterostructure containing two InAs inserts symmetrically arranged in the quantum well makes a 26% reduction in m{sub c}* compared to m{sub c}* in the lattice-matched In{sub 0.53}Ga{sub 0.47}As quantum well possible.

Ponomarev, D. S., E-mail: ponomarev_dmitr@mail.ru; Vasil'evskii, I. S. [National Nuclear Research University 'Moscow Engineering Physics Institute (MEPhI)' (Russian Federation); Galiev, G. B.; Klimov, E. A. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Khabibullin, R. A. [National Nuclear Research University 'Moscow Engineering Physics Institute (MEPhI)' (Russian Federation); Kulbachinskii, V. A.; Uzeeva, N. A. [Moscow State University (Russian Federation)

2012-04-15T23:59:59.000Z

391

Power Conversion Efficiency of AlGaAs/GaAs Schottky Diode for Low-Power On-Chip Rectenna Device Application  

Science Conference Proceedings (OSTI)

A Schottky diode has been designed and fabricated on n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences of Schottky barrier height from theoretical value are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are well rectified by the fabricated Schottky diodes and stable DC output voltage is obtained. Power conversion efficiency up to 50% is obtained at 1 GHz with series connection between diode and load. The fabricated the n-AlGaAs/GaAs Schottky diode provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Mustafa, Farahiyah; Hashim, Abdul Manaf; Rahman, Shaharin Fadzli Abd [Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai (Malaysia); Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, 81310 Skudai Johor Malaysia (Malaysia); Osman, Mohd Nizam [Telekom Research and Development, TM Innovation Centre, 63000 Cyberjaya (Malaysia)

2011-05-25T23:59:59.000Z

392

Cr-Ga-N materials for negative electrodes in Li rechargeable batteries : structure, synthesis and electrochemical performance  

E-Print Network (OSTI)

Electrochemical performances of two ternary compounds (Cr2GaN and Cr3GaN) in the Cr-Ga-N system as possible future anode materials for lithium rechargeable batteries were studied. Motivation for this study was dealt in ...

Kim, Miso

2007-01-01T23:59:59.000Z

393

Micro-Photoluminescence Characterization of Low Density Droplet GaAs Quantum Dots for Single Photon Sources  

Science Conference Proceedings (OSTI)

The GaAs quantum dots in AlGaAs barriers were grown by droplet epitaxy, emitting around 700 nm in wavelength which is compatible with low cost Si based detectors. The excitation power dependent and time resolved micro-photoluminescence measurements identified optical characteristics of exciton and biexciton states which are attributed to good quantum confinements in GaAs QDs.

Ha, S.-K.; Song, J. D.; Lim, J. Y.; Choi, W. J.; Han, I. K.; Lee, J. I. [Nano Convergence Devices Center, KIST, Seoul 136-791 (Korea, Republic of); Bounouar, S.; Donatini, F.; Dang, L. S.; Poizat, J. P. [CEA/CNRS/UJF team 'Nanophysics and semiconductors', Institute Neel/CNRS-UJF, 38042 Grenoble (France); Kim, J. S. [Department of Physics, Yeungnam University, Gyeongsan 712-749 (Korea, Republic of)

2011-12-23T23:59:59.000Z

394

The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission  

Science Conference Proceedings (OSTI)

We present a study on the effects of quantum dot coverage on the properties of InAs dots embedded in GaAs and in metamorphic In0.15Ga0.85As confining layers grown by molecular beam epitaxy on GaAs substrates. We show that redshifted ... Keywords: Long wavelength emission, Molecular beam epitaxy, Quantum dot ripening, Quantum dots

G. Trevisi; L. Seravalli; P. Frigeri; M. Prezioso; J. C. Rimada; E. Gombia; R. Mosca; L. Nasi; C. Bocchi; S. Franchi

2009-03-01T23:59:59.000Z

395

Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes  

E-Print Network (OSTI)

Keywords: GaInN/GaN Light emitting diode temperature Micro-Raman Photoluminescence Electroluminescence well light emitting diode (LED) dies is analyzed by micro-Raman, photoluminescence, cathodoluminescenceJunction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting

Wetzel, Christian M.

396

Influence of post deposition annealing on Y2O3-gated GaAs MOS capacitors and their reliability issues  

Science Conference Proceedings (OSTI)

The feasibility of employing yttrium oxide (Y"2O"3) as high-k gate dielectrics for GaAs metal-oxide-semiconductor (MOS) devices has been investigated. MOS capacitors were fabricated using RF-sputtered deposited Y"2O"3 films on NH"4OH treated n-GaAs substrate. ... Keywords: GaAs, TDDB, Trapping centroid, Y2O3

P. S. Das; A. Biswas

2011-03-01T23:59:59.000Z

397

Direct measurement of interfacial structure in epitaxial Gd2O3 on GaAs (001) using scanning tunneling microscopy  

Science Conference Proceedings (OSTI)

The epitaxial growth of Gd"2O"3 on GaAs (001) has given a low interfacial density of states, resulting in the demonstration of the first inversion-channel GaAs metal-oxide-semiconductor field-effect transistor. Motivated by the significance of this discovery, ... Keywords: Electronic information, GaAs, Gd2O3, Interfacial stacking, Scanning tunneling microscopy

Y. P. Chiu; M. C. Shih; B. C. Huang; J. Y. Shen; M. L. Huang; W. C. Lee; P. Chang; T. H. Chiang; M. Hong; J. Kwo

2011-07-01T23:59:59.000Z

398

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE  

NLE Websites -- All DOE Office Websites (Extended Search)

Identification of the Parasitic Chemical Reactions during AlGaN OMVPE Identification of the Parasitic Chemical Reactions during AlGaN OMVPE by J. R. Creighton, M. E. Coltrin, and W. G. Breiland Motivation-GaN and AlGaN alloys are ex- tremely important materials with widespread applications for optoelectronics (e.g. solid state lighting) and high power electronics. Or- ganometallic vapor phase epitaxy (OMVPE) is the primary deposition methodology, but it suf- fers from several growth chemistry anomalies. Growth rate and alloy composition are often a sensitive function of temperature and other reac- tor variables. These factors make the AlGaN OMVPE process difficult to control and in- crease the cost of the material. Conventional wisdom has been that the non-ideal OMVPE behavior is due to parasitic "pre-reactions" be-

399

The quantum efficiency of InGaAsSb thermophotovoltaic diodes  

DOE Green Energy (OSTI)

Uncoated InGaAsSb/GaSb thermophotovoltaic (TPV) diodes with 0.56 eV (2.2 {micro}m) bandgaps exhibit external quantum efficiencies of 59% at 2 {micro}m, which corresponds to an internal quantum efficiency of 95%. The structures were grown by molecular-beam epitaxy. The devices have electron diffusion lengths as long as 29 {micro}m in 8-{micro}m-wide p-InGaAsSb layers and hole diffusion lengths of 3 {micro}m in 6-{micro}m-wide n-InGaAsSb layers. The electron and hole diffusion lengths appear to increase with increasing p- and n-layer widths, respectively. These excellent minority carrier transport properties of InGaAsSb are well-suited to efficient TPV diode operation.

Martinelli, R.U.; Garbuzov, D.Z.; Lee, H.; Morris, N.; Odubanjo, T.; Taylor, G.C.; Connolly, J.C. [Sarnoff Corp., Princeton, NJ (United States)

1997-10-01T23:59:59.000Z

400

Magnetically active vacancy related defects in irradiated GaN layers  

Science Conference Proceedings (OSTI)

We present the studies of magnetic properties of 2 MeV {sup 4}He{sup +}-irraadiated GaN grown by metal-organic chemical-vapor deposition. Particle irradiation allowed controllable introduction of Ga-vacancy in the samples. The magnetic moments with concentrations changing between 4.3 and 8.3 Multiplication-Sign 10{sup 17}cm{sup -3} showing superparamagnetic blocking at room temperature are observed. The appearance of clear hysteresis curve at T=5K with coercive field of about H{sub C} Almost-Equal-To 270 Oe suggests that the formation of more complex Ga vacancy related defects is promoted with increasing Ga vacancy content. The small concentration of the observed magnetically active defects with respect to the total Ga-vacancy concentration suggests that the presence of the oxygen/hydrogen-related vacancy complexes is the source of the observed magnetic moments.

Kilanski, L.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076 Aalto Espoo (Finland); Szymczak, R. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Kruszka, R. [Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw (Poland)

2012-08-13T23:59:59.000Z

Note: This page contains sample records for the topic "ga ky ms" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
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401

Electron Traps Detected in p-type GaAsN Using Deep Level Transient Spectroscopy  

DOE Green Energy (OSTI)

The GaAsN alloy can have a band gap as small as 1.0 eV when the nitrogen composition is about 2%. Indium can also be added to the alloy to increase lattice matching to GaAs and Ge. These properties are advantageous for developing a highly-efficient, multi-junction solar cell. However, poor GaAsN cell properties, such as low open-circuit voltage, have led to inadequate performance. Deep-level transient spectroscopy of p-type GaAsN has identified an electron trap having an activation energy near 0.2 eV and a trap density of at least 1016 cm-3. This trap level appears with the addition of small amounts of nitrogen to GaAs, which also corresponds to an increased drop in open-circuit voltage.

Johnston, S.; Kurtz, S.; Friedman, D.; Ptak, A.; Ahrenkiel, R.; Crandall, R.

2005-01-01T23:59:59.000Z

402

VIA EMAIL Ms. Mariah Steele ENERGY STAR Program U.S. Environmental Protection Agency  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

10, 2013 10, 2013 VIA EMAIL Ms. Mariah Steele ENERGY STAR Program U.S. Environmental Protection Agency 1200 Pennsylvania Avenue, NW Room 62023 Washington, DC 20460 Dear Ms. Steele: The U.S. Department of Energy ("DOE") selected a Sunpentown-brand refrigerator, model RF-330SS, manufactured by Hefei Hualing Co., Ltd. ("Hefei Hualing"), for testing as part of DOE's ENERGY STAR ® Verification Testing Program. On October 24, 2012, DOE notified Sunpentown International, Inc. ("Sunpentown") that the model did not meet the ENERGY STAR specification for maximum permitted annual energy use. Hefei Hualing replied to DOE via email, first inquiring why DOE's notification listed the model's maximum permitted energy use as 242 kilowatt-hours per year (kWh/yr) rather than

403

Ms Rocio Meneses | U.S. DOE Office of Science (SC)  

Office of Science (SC) Website

Rocio Meneses Rocio Meneses Scientific User Facilities (SUF) Division SUF Home About Staff Listings/Contact Information What's New User Facilities Accelerator & Detector Research & Development Principal Investigators' Meetings Scientific Highlights Construction Projects BES Home Staff Listings/Contact Information Ms. Rocio Meneses Print Text Size: A A A RSS Feeds FeedbackShare Page Program Assistant Scientific User Facilities Division Office of Basic Energy Sciences SC-22.3/Germantown Building U.S. Department of Energy 1000 Independence Avenue, SW Washington, D.C. 20585-1290 E-Mail: Rocio.Meneses@science.doe.gov Phone: (301) 903-7792 Fax: (301) 903-1690 Ms. Meneses previously worked as an office manager for four years at a non-profit organization called Working Classroom. Working Classroom is a

404

Ms. Judy Clayton, Chair Paducah Citizens Advisory Board EHI Consultants, Inc.  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

19,201 0 19,201 0 Ms. Judy Clayton, Chair Paducah Citizens Advisory Board EHI Consultants, Inc. 1 1 1 Memorial Drive Paducah, Kentucky 4200 1 Dear Ms. Clayton: Thank you for your recent letter providing a recommendation to include option periods in Department of Energy Requests for Proposals for prime contracts. The Federal Acquisition Regulation (FAR) provides the total of the basic and option period of a contract for services shall not exceed 5 years, unless approved in accordance with agency procedures. In determining to approve inclusion of an option beyond the 5-year base period specified in FAR, many additional factors must be taken into consideration. These factors include: an expectation that the work requirements will continue beyond the base period of the contract; a

405

VIA EMAIL Ms. Leslie Jones ENERGY STAR Program U.S. Environmental Protection Agency  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

6, 2011 6, 2011 VIA EMAIL Ms. Leslie Jones ENERGY STAR Program U.S. Environmental Protection Agency Washington, DC 20460 Dear Ms. Jones: On March 9, 2011, the United States Department of Energy (DOE) notified Whirlpool Corporation (Whirlpool) that DOE had completed testing of the KitchenAid refrigerator model KSRS25RV* under the ENERGY STAR Testing Pilot Program and confirmed that the model did not meet the ENERGY STAR maximum energy consumption requirement of 580 kWh/yr. DOE gave Whirlpool until March 29, 2011, to provide conclusive manufacturing or design evidence or quality assurance information rebutting DOE testing, which showed that this product did not meet the ENERGY STAR Program's energy-efficiency. On March 29,2011, Whirlpool replied that its certification test results for the model met the

406

Mr. Christopher Lawrence and Ms. Julie Smith Office of Electricity Delivery and Energy Reliability  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Mr. Christopher Lawrence and Ms. Julie Smith Office of Electricity Delivery and Energy Reliability Mail Code: OE-20 U.S. Department of Energy 1000 Independence Avenue, SW Washington, D.C. 20585 Dear Mr. Lawrence and Ms. Smith, The Western Governors' Association (WGA) is submitting these comments in response to the Department of Energy's (DOE) Request for Information (RFI), dated August 29, 2013 1 . The RFI outlines a proposed process to establish a coordinated series of meetings and other actions for qualified transmission projects, via an Integrated, Interagency Pre-Application process (IIP). Western Governors appreciate efforts to streamline the siting and permitting process for transmission. Western Governors have a clear goal to site and permit transmission lines three years after a

407

Ms. Katharine Kaplan ENERGY STAR Program U.S. Environmental Protection Agency  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

September 2, 2010 September 2, 2010 Ms. Katharine Kaplan ENERGY STAR Program U.S. Environmental Protection Agency 1200 Pennsylvania Avenue, NW MC 6202J Washington, DC 20460 Dear Ms. Kaplan: On July 29, 2010, the United States Department of Energy (DOE) notified Whirlpool Corporation that DOE testing of one unit of the Amana dishwasher model ASD2524VE*, performed as part of the ENERGY STAR Verification Testing Pilot Program, showed that this model exceeded allowable ENERGY STAR efficiency requirements by 9.2 percent during Stage I testing. DOE gave Whirlpool until August 9, 2010, to request testing of additional units so that DOE could statistically determine whether this model meets the ENEGRY STAR requirements or to have this matter referred to the United States Environmental Protection Agency (EPA).

408

Development of chiral LC-MS methods for small molecules and their applications i  

Office of Scientific and Technical Information (OSTI)

chiral LC-MS methods for small molecules and their applications i chiral LC-MS methods for small molecules and their applications i n the analysis of enantiomeric composition and pharmacokinetic studies Meera Jay Desai A dissertation submitted to the graduate faculty in partial fulfillment of the requirements for the degree of DOCTOR OF PHILOSOPHY Major: Analytical Chemistry Program of Study Committee: Daniel W. Armstrong, Major Professor Edward S. Yeung Robsrt S. Houk Victor S.-Y. Lin Gregory Phillips Iowa State University Ames, Iowa 2004 .. 11 Graduate College Iowa State University This is to certify that the doctoral dissertation of Meera Jay Desai has met the dissertation requirement of Iowa State University Major Professor ,&I w4/< For e Major Program ... 1 1 1 This dissertation i s Adicated tu Mypurt?ntsl for taking a chance on a better lge for themselves and their chilhen

409

Ms. Julie A. Smith Mr. Christopher Lawrence Office of Electricity Delivery and Energy Reliability  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

October 30, 2013 October 30, 2013 Ms. Julie A. Smith Mr. Christopher Lawrence Office of Electricity Delivery and Energy Reliability Mail Code: OE-20 U.S. Department of Energy 1000 Independence Avenue, SW Washington, DC 20585 Dear Ms. Smith and Mr. Lawrence: The Association of Fish and Wildlife Agencies (AFWA) would like to provide comments on the Federal Register Notice Request for Information (RFI) on Improving Performance of Federal Permitting and Review of Infrastructure Projects, Federal Register Document 2013-21098. AFWA is the professional association that represents the collective voice of North America's state, provincial and territorial fish and wildlife agencies. The state fish and wildlife agencies (State agencies) have statutory authority

410

File:USDA-CE-Production-GIFmaps-MS.pdf | Open Energy Information  

Open Energy Info (EERE)

MS.pdf MS.pdf Jump to: navigation, search File File history File usage Mississippi Ethanol Plant Locations Size of this preview: 776 × 600 pixels. Full resolution ‎(1,650 × 1,275 pixels, file size: 278 KB, MIME type: application/pdf) Description Mississippi Ethanol Plant Locations Sources United States Department of Agriculture Related Technologies Biomass, Biofuels, Ethanol Creation Date 2010-01-19 Extent State Countries United States UN Region Northern America States Mississippi External links http://www.nass.usda.gov/Charts_and_Maps/Ethanol_Plants/ File history Click on a date/time to view the file as it appeared at that time. Date/Time Thumbnail Dimensions User Comment current 16:17, 27 December 2010 Thumbnail for version as of 16:17, 27 December 2010 1,650 × 1,275 (278 KB) MapBot (Talk | contribs) Automated bot upload

411

Microsoft PowerPoint - 13-01 Poirier SRNL-MS-2010-00246.ppt  

NLE Websites -- All DOE Office Websites (Extended Search)

Tanks 5 and 6 Oxalic Acid Dissolution and Tanks 5 and 6 Oxalic Acid Dissolution and Tank 5 and 6 Characterization M. R. Poirier, R. Jolly, and G. D. Thaxton November 18, 2010 SRNL-MS-2010-00246 Print Close 2 Outline of Talk Introduction Description of Testing Simulant Testing Actual Waste Testing Test Results Description of Oxalic Acid Cleaning in Tank Farm Results from Oxalic Acid Cleaning in Tank Farm Mechanical Cleaning Conclusions Print

412

Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces  

SciTech Connect

InGaN-based light emitting diodes (LEDs) with a top pattern-nanoporous p-type GaN:Mg surface were fabricated by using a photoelectrochemical (PEC) process. The peak wavelengths of electroluminescence (EL) and operating voltages were measured as 461.2 nm (3.1 V), 459.6 nm (9.2 V), and 460.1 nm (3.3 V) for conventional, nanoporous, and pattern-nanoporous LEDs using 20 mA operation current. The EL spectrum of the nanoporous LED had a larger blueshift phenomenon as a result of a partial compression strain release in the InGaN active layer through the formation of a top nanoporous surface. The light output power had 12.1% and 26.4% enhancements for the nanoporous and the pattern-nanoporous LEDs compared with conventional LEDs. The larger operating voltage of the nanoporous LED was due to the non-ohmic contact on the PEC treated p-type GaN:Mg surface. By using a pattern-nanoporous p-type GaN:Mg structure, the operating voltage of the pattern-nanoporous LED was reduced to 3.3 V. A lower compression strain in the InGaN active layer and a higher light extraction efficiency at the top nanoporous surface were observed in pattern-nanoporous LEDs for higher efficiency nitride-based LED applications.

Yang, C.C.; Lin, C.F.; Lin, C.M.; Chang, C.C.; Chen, K.T.; Chien, J.F.; Chang, C.Y. [Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan (China)

2008-11-17T23:59:59.000Z

413

Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy  

SciTech Connect

The effects of NH{sub 3} flow, group III flux, and substrate growth temperature on indium incorporation and surface morphology have been investigated for bulk InGaN films grown by ammonia molecular beam epitaxy. The incorporation of unintentional impurity elements (H, C, O) in InGaN films was studied as a function of growth temperature for growth on polar (0001) GaN on sapphire templates, nonpolar (1010) bulk GaN, and semipolar (1122), (2021) bulk GaN substrates. Enhanced indium incorporation was observed on both (1010) and (2021) surfaces relative to c-plane, while reduced indium incorporation was observed on (1122) for co-loaded conditions. Indium incorporation was observed to increase with decreasing growth temperature for all planes, while being relatively unaffected by the group III flux rates for a 1:1 Ga:In ratio. Indium incorporation was found to increase at the expense of a decreased growth rate for higher ammonia flows; however, smooth surface morphology was consistently observed for growth on semipolar orientations. Increased concentrations of oxygen and hydrogen were observed on semipolar and nonpolar orientations with a clear trend of increased hydrogen incorporation with indium content.

Browne, David A.; Young, Erin C.; Lang, Jordan R.; Hurni, Christophe A.; Speck, James S. [Materials Department, University of California Santa Barbara, Santa Barbara, California 93106 (United States)

2012-07-15T23:59:59.000Z

414

Local structure and vibrational properties of alpha'-Pu martensitein Ga-stabilized delta-Pu  

Science Conference Proceedings (OSTI)

Extended x-ray absorption fine structure spectroscopy (EXAFS) is used to investigate the local atomic environment and vibrational properties of plutonium and gallium atoms in the {alpha}{prime} and {delta} phases of a mixed phase Pu-Ga alloy. EXAFS results measured at low temperature compare the structure of the mixed phase sample with a single-phase {delta}-Pu sample. EXAFS spectral components attributed to both {alpha}{prime}-Pu and {delta}-Pu were observed in the mixed phase sample. Ga K-edge EXAFS spectra indicate local atomic environments similar to the Pu LIII-edge EXAFS results, which suggests that Ga is substitutional for Pu atoms in both the monoclinic {alpha}{prime}-Pu and the fcc {delta}-Pu structures. In {delta}-Pu, we measure a Ga-Pu bond length contraction of 0.11 Angstroms with respect to the Pu-Pu bond length. The corresponding bond-length contraction around Ga in {alpha}{prime}-Pu is only 0.03 Angstroms. Results from temperature-dependent Pu LIII-edge EXAFS measurements are fit to a correlated Debye model, and a large difference in the Pu-Pu bond Debye temperature is observed for the {alpha}{prime} and {delta} phases: {theta}{sub cD}({alpha}{prime})=159{+-}13 K versus {theta}{sub cD}({delta})=120{+-}3 K. The corresponding analysis for the Ga K EXAFS determines a Ga-Pu bond Debye temperature of {theta}{sub cD}({delta})=188{+-}12 K in the {delta}-Pu phase. These results are related to the observed solubility of Ga in {delta}-Pu, the ''stabilization'' of {delta}-Pu by Ga at room temperature, and the insolubility of Ga in {alpha}{prime}-Pu.

Nelson, E.J.; Blobaum, K.J.M.; Wall, M.A.; Allen, P.G.; Schwartz,A.J.; Booth, C.H.

2003-02-26T23:59:59.000Z

415

Performance Evaluation of Real Time Formaldehyde Monitors: PTR-MS and  

NLE Websites -- All DOE Office Websites (Extended Search)

Performance Evaluation of Real Time Formaldehyde Monitors: PTR-MS and Performance Evaluation of Real Time Formaldehyde Monitors: PTR-MS and Interscan 4160-500B Portable Monitor Title Performance Evaluation of Real Time Formaldehyde Monitors: PTR-MS and Interscan 4160-500B Portable Monitor Publication Type Report LBNL Report Number LBNL-6357E Year of Publication 2013 Authors Sidheswaran, Meera A., Sebastian Cohn, Douglas P. Sullivan, and Lara A. Gundel Publisher Lawrence Berkeley National Laboratory City Berkeley Abstract Executive Summary Exposure to volatile organic compounds (VOCs) in buildings is a health hazard. Of particular concern is formaldehyde, a ubiquitous carcinogen emitted from furnishings and adhesives in homes and offices. Practitioners and researchers in the area of building performance are very interested in measuring formaldehyde in homes, and they need instrumentation that responds immediately. Current formaldehyde monitoring techniques are hampered by interfering substances in the sample airstream, compromising measurement accuracy and leading to drift. Many experts are now using a tabletop real-time formaldehyde instrument, the Interscan 4160-2, that LBNL researchers have found to be very sensitive to water vapor and low levels of volatile organic compounds (VOCs). Unless ways are found to remove these interferences, relying on the Interscan's readings in buildings will lead to the wrong conclusions about formaldehyde levels and could trigger subsequent unnecessary expense and/or inappropriate responses.

416

Performance characteristics of cryofocusing GC/MS system at BWXT Pantex Plant.  

SciTech Connect

Ensuring the reliability of all components within a weapon system becomes increasingly important as the stockpile ages. One of the most noteworthy surveillance techniques designed to circumvent (or take place alongside) traditional D&I operations is to collect a sample of gas from within the internal atmosphere of a particular region in a weapon. While a wealth of information about the weapon may be encoded within the composition of its gas sample, our access to that information is only as good as the method used to analyze the sample. It has been shown that cryofocusing-GC/MS offers advantages in terms of sensitivity, ease of sample collection, and robustness of the equipment/hardware used. Attention is therefore focused on qualifying a cryo-GC/MS system for routine stockpile surveillance operations at Pantex. A series of tests were performed on this instrument to characterize the linearity and repeatability of its response using two different standard gas mixes (ozone precursor and TO-14) at various concentrations. This paper outlines the methods used and the results of these tests in order to establish a baseline by which to compare future cryo-GC/MS analyses. A summary of the results is shown.

Brown, Jason R.; Banet, Judith F.; Ithaca, Jerry (BWXT Pantex Plant, Amarillo, TX); Thornberg, Steven Michael; Woods, Lorelei (BWXT Pantex Plant, Amarillo, TX)

2006-07-01T23:59:59.000Z

417

Sources of Technical Variability in Quantitative LC-MS Proteomics: Human Brain Tissue Sample Analysis.  

SciTech Connect

To design a robust quantitative proteomics study, an understanding of both the inherent heterogeneity of the biological samples being studied as well as the technical variability of the proteomics methods and platform is needed. Additionally, accurately identifying the technical steps associated with the largest variability would provide valuable information for the improvement and design of future processing pipelines. We present an experimental strategy that allows for a detailed examination of the variability of the quantitative LC-MS proteomics measurements. By replicating analyses at different stages of processing, various technical components can be estimated and their individual contribution to technical variability can be dissected. This design can be easily adapted to other quantitative proteomics pipelines. Herein, we applied this methodology to our label-free workflow for the processing of human brain tissue. For this application, the pipeline was divided into four critical components: Tissue dissection and homogenization (extraction), protein denaturation followed by trypsin digestion and SPE clean-up (digestion), short-term run-to-run instrumental response fluctuation (instrumental variance), and long-term drift of the quantitative response of the LC-MS/MS platform over the 2 week period of continuous analysis (instrumental stability). From this analysis, we found the following contributions to variability: extraction (72%) >> instrumental variance (16%) > instrumental stability (8.4%) > digestion (3.1%). Furthermore, the stability of the platform and its suitability for discovery proteomics studies is demonstrated.

Piehowski, Paul D.; Petyuk, Vladislav A.; Orton, Daniel J.; Xie, Fang; Moore, Ronald J.; Ramirez Restrepo, Manuel; Engel, Anzhelika; Lieberman, Andrew P.; Albin, Roger L.; Camp, David G.; Smith, Richard D.; Myers, Amanda J.

2013-05-03T23:59:59.000Z

418

GaInAsSb materials for thermophotovoltaics  

DOE Green Energy (OSTI)

Ga{sub 1{minus}x}In{sub x}As{sub 1{minus}y}Sb{sub y} (0.06 < x < 0.2, 0.05 < y < 0.18) epilayers were grown lattice-matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) and molecular beam epitaxy (MBE). For lattice-matched alloys, mirror-like surface morphologies were obtained by both OMVPE and MBE. The 4K photoluminescence (PL) of all layers had a full-width at half-maximum (FWHM) of less than 10 meV for PL peak emission < 1.9 {micro}m. PL FWHM increased to 30 meV for peak emission {approximately}2.12 {micro}m for OMVPE-grown layers. Nominally undoped layers are p-type with typical 300 K hole concentration of {approximately}9 {times} 10{sup 15} cm{sup {minus}3} and hole mobility {approximately}450 to 580 cm{sup 2}/V-s for OMVPE-grown layers, p- and n-type doping is reported for layers grown with either technique. The ideality factor of diode structures is {approximately}2 for both techniques.

Wang, C.A.; Turner, G.W.; Manfra, M.J.; Choi, H.K.; Spears, D.L. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.

1996-12-01T23:59:59.000Z

419

Characterization Of Nuclear Materials Using Time-Of-Flight ICP-MS  

Science Conference Proceedings (OSTI)

The investigation of illicit trafficking of nuclear materials, nuclear safeguards analysis, and non-proliferation control requires sensitive and isotope-selective detection methods to gain crucial nuclear forensic information like isotope 'fingerprints' and multi-element signatures. The advantage of time-of-flight (TOF) mass spectrometry - quasi-simultaneous multi-mass analysis - combined with an inductively coupled plasma (ICP) ion source provides an analytical instrument with multi-element and multi-isotope capability and good detection limits. A TOF-ICP-MS system thus appears to be an advantageous choice for the investigation and characterization of nuclear materials. We present here results using a GBC OptiMass 8000 time-of-flight ICP-MS for the isotope screening of solid samples by laser ablation and the multi-element determination of impurities in uranium ore concentrates using matrix matched standards. A laser ablation system (New Wave Research, UP 213) coupled to the TOF-ICP-MS instrument has been used to optimize the system for analysis of non-radioactive metal samples of natural isotopic composition for a variety of elements including Cu, Sr, Zr, Mo, Cd, In, Ba, Ta, W, Re, Pt, and Pb in pure metals, alloys, and glasses to explore precision, accuracy, and detection limits. Similar methods were then applied to measure uranium. When the laser system is optimized, no mass bias correction is required. Precision and accuracy for the determination of the isotopic composition is typically 1 - 3% for elemental concentrations of as little as 50 ppm in the matrix, with no requirement for sample preparation. The laser ablation precision and accuracy are within ~10x of the instrumental limits for liquid analysis (0.1%). We have investigated the capabilities of the TOF-ICP-MS for the analysis of impurities in uranium matrices. Matrix matching has been used to develop calibration curves for a range of impurities (alkaline, earth-alkaline, transition metals, and rare earth elements). These calibration curves have been used to measure impurities in a number of uranium samples. The results from the TOF-ICP-MS will be compared with other mass spectrometric methods.

Buerger, Stefan [ORNL; Riciputi, Lee R [ORNL; Bostick, Debra A [ORNL; Duckworth, Douglas {Doug} C [ORNL

2006-01-01T23:59:59.000Z

420

Ga-doped ZnO grown by pulsed laser deposition in H2: the roles of Ga and H  

DOE Green Energy (OSTI)

Highly conductive thin films of ZnO doped with Ga were grown by pulsed-laser deposition (PLD) with 10 mTorr of H2 in the growth chamber. Compared with a more conventional method of producing conductive films of ZnO, i.e., growth in O2 followed by annealing in forming gas (5% H2 in Ar), the H2 method requires no post-growth anneal and also produces higher carrier concentrations and lower resistivities with better depth uniformity. As an example, a 65-nm-thick sample had a room-temperature mobility of 32 cm2/V-s, a concentration of 6.8 x 1020 cm-3, and a resistivity of 2.9 x 10^-4 ohm-cm. From a scattering model, the donor and acceptor concentrations were calculated as 8.9 x 1020 and 2.1 x 10^20 cm-3, respectively, as compared to the Ga and H concentrations of 11 x 10^20 and 1 x 10^20 cm-3. Thus, H does not play a significant role as a donor in this type of ZnO

Look, David; Droubay, Timothy; McCloy, John S.; Zhu, Zihua; Chambers, Scott A.

2011-01-11T23:59:59.000Z

Note: This page contains sample records for the topic "ga ky ms" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices  

Science Conference Proceedings (OSTI)

A set of AlGaN/GaN high electron mobility transistor devices has been investigated using step-stress testing, and representative samples of undegraded, source-side-degraded, and drain-side-degraded devices were examined using electron microscopy and microanalysis. An unstressed reference sample was also examined. All tested devices and their corresponding transmission electron microscopy samples originated from the same wafer and thus received nominally identical processing. Step-stressing was performed on each device and the corresponding current voltage characteristics were generated. Degradation in electrical performance, specifically greatly increased gate leakage current, was shown to be correlated with the presence of crystal defects near the gate edges. However, the drain-side-degraded device showed a surface pit on the source side, and another region of the same device showed no evidence of damage. Moreover, significant metal diffusion into the barrier layer from the gate contacts was also observed, as well as thin amorphous oxide layers below the gate metal contacts, even in the unstressed sample. Overall, these observations emphasize that gate-edge defects provide only a partial explanation for device failure.

Johnson, Michael [Arizona State University; Cullen, David A [ORNL; Liu, Lu [University of Florida; Kang, Tsung Sheng [University of Florida, Gainesville; Ren, F. [University of Florida; Chang, C. Y. [University of Florida; Pearton, S. J. [University of Florida; Jang, Soohwan [University of Florida, Gainesville; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Smith, David J [Arizona State University

2012-01-01T23:59:59.000Z

422

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 55, NO. 6, DECEMBER 2008 3633 Radiation Effects on InGaN Quantum Wells  

E-Print Network (OSTI)

GaN Quantum Wells and GaN Simultaneously Probed by Ion Beam-Induced Luminescence J. W. Tringe, Member, IEEE, A. Stevens, and C. Wetzel, Member, IEEE Abstract--InGaN quantum well structures on GaN epilayers were exposed of the epilayer and wells. Performance was estimated by the intensity of ion-beam induced luminescence. Two

Wetzel, Christian M.

423

Enhanced quality thin film Cu(In,Ga)Se.sub.2 for semiconductor device applications by vapor-phase recrystallization  

DOE Patents (OSTI)

Enhanced quality thin films of Cu.sub.w (In,Ga.sub.y)Se.sub.z for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):Cu.sub.x Se on a substrate to form a large-grain precursor and then converting the excess Cu.sub.x Se to Cu(In,Ga)Se.sub.2 by exposing it to an activity of In and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga).sub.y Se.sub.z. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor. The conversion process is preferably performed in the temperature range of about 300.degree.-600.degree. C., where the Cu(In,Ga)Se.sub.2 remains solid, while the excess Cu.sub.x Se is in a liquid flux. The characteristic of the resulting Cu.sub.w (In,Ga).sub.y Se.sub.z can be controlled by the temperature. Higher temperatures, such as 500.degree.-600.degree. C., result in a nearly stoichiometric Cu(In,Ga)Se.sub.2, whereas lower temperatures, such as 300.degree.-400.degree. C., result in a more Cu-poor compound, such as the Cu.sub.z (In,Ga).sub.4 Se.sub.7 phase.

Tuttle, John R. (Denver, CO); Contreras, Miguel A. (Golden, CO); Noufi, Rommel (Golden, CO); Albin, David S. (Denver, CO)

1994-01-01T23:59:59.000Z

424

Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates  

Science Conference Proceedings (OSTI)

The first GaS nanosheet-based photodetectors are demonstrated on both mechanically rigid and flexible substrates. Highly-crystalline, exfoliated GaS nanosheets are promising for optoelectronics due to strong absorption in the UV-visible wavelength region. Photocurrent measurements of GaS nanosheet photodetectors made on SiO2/Si substrates and flexible polyethylene terephthalate (PET) substrates exhibit a photo-responsivity at 254nm up to 4.2 AW-1 and 19.2 AW-1, respectively, which exceeds that of graphene, MoS2, or other 2D materials-based devices. Additionally, the linear dynamic range of the devices on SiO2/Si and PET substrates are 97.7dB and 78.73 dB, respectively. Both surpass that of currently-exploited InGaAs photodetectors (66 dB). Theoretical modeling of the electronic structures indicates that the reduction of the effective mass at the valence band maximum (VBM) with decreasing sheet thickness enhances the carrier mobility of the GaS nanosheets, contributing to the high photocurrents. Double-peak VBMs are theoretically predicted for ultrathin GaS nanosheets (thickness less than 5 monolayers), which is found to promote photon absorption. These theoretical and experimental results show that GaS nanosheets are promising materials for high performance photodetectors on both conventional silicon and flexible substrates.

Hu, Prof Pingan [Harbin Institute of Technology; Wang, Lifeng [Harbin Institute of Technology; Yoon, Mina [ORNL; Zhang, Jia [Harbin Institute of Technology; Feng, Wei [Harbin Institute of Technology; Wang, Xiaona [Harbin Institute of Technology; Wen, Zhenzhong [Harbin Institute of Technology; Idrobo Tapia, Juan C [ORNL; Miyamoto, Yoshiyuki [National Institute of Advanced Industrial Science and Technology, Japan; Geohegan, David B [ORNL; Xiao, Kai [ORNL

2013-01-01T23:59:59.000Z

425

Polarity inversion of N-face GaN using an aluminum oxide interlayer  

Science Conference Proceedings (OSTI)

The polarity of GaN grown by plasma-assisted molecular beam epitaxy was inverted from N-face to Ga-face by inserting a composite AlN/aluminum oxide (AlO{sub x}) interlayer structure at the inversion interface. The change in polarity was verified in situ by reflection high energy electron diffraction via intensity transients and postgrowth surface reconstructions, and ex situ by convergent beam electron diffraction and etch studies in an aqueous potassium hydroxide solution. The inverted materials showed smooth surfaces and good electrical properties. AlGaN/GaN high electron mobility transistors fabricated on the inverted epilayers showed good dc and high frequency performance. A current-gain cutoff frequency (f{sub T}) of 21 GHz and maximum oscillation frequency (f{sub max}) of 61 GHz were measured in devices with a gate length of 0.7 {mu}m. These data compare favorably to those of Ga-face AlGaN/GaN devices with a similar structure grown on Si-face SiC substrates.

Wong, Man Hoi; Mishra, Umesh K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560 (United States); Wu, Feng; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

2010-12-15T23:59:59.000Z

426

Thermoelectric properties of epitaxial TbAs:InGaAs nanocomposites  

SciTech Connect

InGaAs lattice-matched to InP was grown by molecular beam epitaxy with randomly distributed TbAs nanoparticles for thermoelectric power generation applications. TbAs:InGaAs is expected to have a large thermoelectric figure of merit, ZT, particularly at high temperatures, owing to energy band alignment between the nanoparticles and their surrounding matrix. Here, the room temperature thermoelectric properties were measured as a function of TbAs concentration, revealing a maximum thermoelectric power factor of 2.38 W/mK{sup 2} and ZT of 0.19 with 0.2% TbAs. Trends in the thermoelectric properties closely resemble those found in comparable ErAs:InGaAs nanocomposite materials. However, nanoparticles were not observed by scanning transmission electron microscopy in the highest ZT TbAs:InGaAs sample, unlike the highest ZT ErAs:InGaAs sample (0.2% ErAs) and two higher concentration TbAs:InGaAs samples examined. Consistent with expectations concerning the positioning of the Fermi level in these materials, ZT was enhanced by TbAs incorporation largely due to a high Seebeck coefficient, whereas ErAs provided InGaAs with higher conductivity but a lower Seebeck coefficient than that of TbAs:InGaAs. Thermal conductivity was reduced significantly from that of intrinsic thin-film InGaAs only with TbAs concentrations greater than {approx}1.7%.

Clinger, Laura E.; Zide, Joshua M. O. [Materials Science and Engineering Department, University of Delaware, Newark, Delaware 19716 (United States); Pernot, Gilles; Shakouri, Ali [Electrical Engineering Department, University of California, Santa Cruz, California 95064 (United States); Buehl, Trevor E.; Burke, Peter G.; Gossard, Arthur C. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Palmstroem, Christopher J. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

2012-05-01T23:59:59.000Z

427

Direct evidence of the fermi-energy-dependent formation of Mn interstitials in modulation doped Ga1-yAlyAs/Ga1-xMnxAs/Ga1-yAlyAs heterostructures  

SciTech Connect

Using ion channeling techniques, we investigate the lattice locations of Mn in Ga{sub 1-x}Mn{sub x}As quantum wells between Be-doped Ga{sub 1-y}Al{sub y}As barriers. The earlier results showed that the Curie temperature T{sub C} depends on the growth sequence of the epitaxial layers. A lower T{sub C} was found in heterostructures in which the Ga{sub 1-x}Mn{sub x}As layer is grown after the modulation-doped barrier. Here we provide direct evidence that this reduction in T{sub C} is directly correlated with an increased formation of magnetically inactive Mn interstitials. The formation of interstitials is induced by a shift of the Fermi energy as a result of the transfer of holes from the barrier to the quantum well during the growth.

Yu, K.M.; Walukiewicz, W.; Wojtowicz, T.; Lim, W.L.; Liu, X.; Dobrowolska, M.; Furdyna, J.K.

2004-01-30T23:59:59.000Z

428

Growth and development of GaInAsP for use in high-efficiency solar cells  

DOE Green Energy (OSTI)

This report describes work done during Phase II of the subcontract. Goals for Phase II include the following: (1) Optimize the GaInAsP cell on GaAs and demonstrate a 500-sun at air mass (AM) 1.5 efficiency of >23%. (2) Develop a window layer, including the evaluation of AlGaAs, GaInP, AlGaAsP, AlGaInP, and GaP. (3) Develop a front-surface contact, with a grid designed for 500-sun concentration, and a goal of a contact resistivity of [approximately]10[sup 5] ohm-cm[sup 2]. (4) Grow GaInAsP cells on Ge, with a goal of a 1-sun (AM 1.5) efficiency of >15%. Accomplishments reported herein include (1) the fabrication of p-on-n and n-on-p GaInAsP cells on GaAs, with the n-on-p cell demonstrating a 10-sun (AM 1.5) active-area efficiency of 23.4% as measured at NREL (2) the evaluation of Al[sub x]Ga([sub 1-x])As, GaInP[sub 2], and AlInP[sub 2] window layers; and (3) the fabrication of GaInAsP cells on Ge, with the demonstration of a p-on-n GaInAsP cell grown on Ge with a 1-sun (AM 1.5) active-area efficiency of 14.4%.

Sharps, P.R. (Research Triangle Inst., Research Triangle Park, NC (United States))

1993-04-01T23:59:59.000Z

429

Ferromagnetism in GaN: Gd: A density functional theory study  

SciTech Connect

First principle calculations of the electronic structure and magnetic interaction of GaN:Gd have been performed within the Generalized Gradient Approximation (GGA) of the density functional theory (DFT) with the on-site Coulomb energy U taken into account (also referred to as GGA+U). The ferromagnetic p-d coupling is found to be over two orders of magnitude larger than the s-d exchange coupling. The experimental colossal magnetic moments and room temperature ferromagnetism in GaN:Gd reported recently are explained by the interaction of Gd 4f spins via p-d coupling involving holes introduced by intrinsic defects such as Ga vacancies.

Stevenson, Cynthia; Stevenson, Cynthia

2008-02-04T23:59:59.000Z

430

Low Cost Production of InGaN for Next-Generation Photovoltaic Devices  

SciTech Connect

The goal of this project is to develop a low-cost and low-energy technology for production of photovoltaic devices based on InGaN materials. This project builds on the ongoing development by Structured Materials Industries (SMI), of novel thin film deposition technology for Group III-Nitride materials, which is capable of depositing Group-III nitride materials at significantly lower costs and significantly lower energy usage compared to conventional deposition techniques. During this project, SMI demonstrated deposition of GaN and InGaN films using metalorganic sources, and demonstrated compatibility of the process with standard substrate materials and hardware components.

Nick M. Sbrockey, Shangzhu Sun, Gary S. Tompa,

2012-07-09T23:59:59.000Z

431

Development of a Multifilament PIT V3Ga Conductor for Fusion Applications  

SciTech Connect

Previous studies on V{sub 3}Ga assert its suitability for use in proposed fusion reactors. V{sub 3}Ga may outperform Nb{sub 3}Sn in a fusion reactor environment based on its relatively flat critical-current profile in the 15 T-20 T range, resilience to applied strain, and reduced risk of induced radioactivity. A multifilament powder-in-tube V{sub 3}Ga conductor was designed, fabricated and tested with a focus on evaluating critical current versus applied field and applied strain performance, wire drawing difficulties, heat-treatment optimization, and overall feasibility of the concept.

Distin, J.S.; Ghosh, A.; Motowidlo, L.R.; Lee, P.J.; Larbalestier, D.C.; Lu, X.F.; Cheggour, N.; Stauffer, T.C.; Goodrich, L.F.

2011-08-03T23:59:59.000Z

432

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1-eV)/GaInAs(0.7-eV) Four-Junction Solar Cell: Preprint  

DOE Green Energy (OSTI)

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga0.5In0.5P/GaAs/Ga0.75In0.25As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga0.75In0.25As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap GaxIn1-xAs fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the GaxIn1-xAs fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-05-01T23:59:59.000Z

433

Low-energy positron diffraction from GaAs(110)  

Science Conference Proceedings (OSTI)

Intensities of 16 beams of near normal incidence positrons have been measured at {ital T}=120 K and analyzed using a multiple scattering model of the low-energy positron diffraction (LEPD) process. Excellent correspondence between the measured and calculated intensities is obtained for a reconstruction that is primarily a bond-length-conserving rotation of the top layer, with As relaxed outward and Ga inward with a tilt angle {omega}{sub 1} = 28.6 {plus minus} 3{degree}, confirming the results of previous structure analyses for this surface. The quality of the description of the measured intensities, as measured by the x-ray {ital R} factor, is significantly better for LEPD than for low-energy electron diffraction. This result is attributed to the repulsive character of the positron-ion core potential and a resulting more surface sensitive diffraction process for LEPD.

Lessor, D.L. (Pacific Northwest Laboratory, K5-17 ISB-1, Richland, Washington 99352 (United States)); Duke, C.B. (Xerox Webster Research Center, 800 Phillips Road, 0114-38D, Webster, New York 14580 (United States)); Chen, X.M.; Brandes, G.R.; Canter, K.F. (Department of Physics, Brandeis University, Waltham, Massachusetts 02254 (United States)); Ford, W.K. (Advanced Materials Center and Department of Physics, Montana State University, Bozeman, Montana 59717 (United States))

1992-07-01T23:59:59.000Z

434

GaN directional couplers for integrated quantum photonics  

SciTech Connect

Large cross-section GaN waveguides are proposed as a suitable architecture to achieve integrated quantum photonic circuits. Directional couplers with this geometry have been designed with aid of the beam propagation method and fabricated using inductively coupled plasma etching. Scanning electron microscopy inspection shows high quality facets for end coupling and a well defined gap between rib pairs in the coupling region. Optical characterization at 800 nm shows single-mode operation and coupling-length-dependent splitting ratios. Two photon interference of degenerate photon pairs has been observed in the directional coupler by measurement of the Hong-Ou-Mandel dip [C. K. Hong, et al., Phys. Rev. Lett. 59, 2044 (1987)] with 96% visibility.

Zhang Yanfeng; McKnight, Loyd; Watson, Ian M.; Gu, Erdan; Calvez, Stephane; Dawson, Martin D. [Institute of Photonics, SUPA, University of Strathclyde, Glasgow G4 0NW (United Kingdom); Engin, Erman; Cryan, Martin J.; Thompson, Mark G.; O'Brien, Jeremy L. [Centre for Quantum Photonics, H. H. Wills Physics Laboratory and Department of Electrical and Electronic Engineering, University of Bristol, Merchant Venturers Building, Woodland Road, Bristol BS8 1UB (United Kingdom)

2011-10-17T23:59:59.000Z

435

Growth of cubic GaN quantum dots  

SciTech Connect

Zinc-blende GaN quantum dots were grown on 3C-AlN(001) by two different methods in a molecular beam epitaxy system. The quantum dots in method A were fabricated by the Stranski-Krastanov growth process. The quantum dots in method B were fabricated by droplet epitaxy, a vapor-liquid-solid process. The density of the quantum dots was controllable in a range of 10{sup 8} cm{sup -2} to 10{sup 12} cm{sup -2}. Reflection high energy electron diffraction analysis confirmed the zinc-blende crystal structure of the QDs. Photoluminescence spectroscopy revealed the optical activity of the QDs, the emission energy was in agreement with the exciton ground state transition energy of theoretical calculations.

Schupp, T.; Lischka, K.; As, D. J. [Universitaet Paderborn, Department Physik, Warburger Str.100, 33095 Paderborn (Germany); Meisch, T.; Neuschl, B.; Feneberg, M.; Thonke, K. [Institut fuer Quantenmaterie, Universitaet Ulm, 89069 Ulm (Germany)

2010-11-01T23:59:59.000Z

436

Chandra Observation of MS 1455.0+2232: cold fronts in a massive cooling flow cluster?  

E-Print Network (OSTI)

We present the Chandra observation of the cluster of galaxies MS 1455.0+2232. From previous ASCA and ROSAT observations, this cluster was identified as a ``relaxed'' cluster that hosts one of the most massive cooling flows detected. With higher angular resolution, the Chandra X-ray image shows the presence of two surface brightness edges on opposite sides of the X-ray peak: the first at 190 kpc to the north and the second at 450 kpc to the south. Even though the low exposure of this observation limits our ability to constrain the temperature jump across both edges, we show that the northern edge is likely to be a ``cold front'' similar to others observed recently by Chandra in the clusters A2142, A3667, RX J1720.1+2638, and A2256. The observed cold front is most likely produced by the motion, from south to north, of a group-size dark matter halo. The most natural explanation for the presence of this observed moving subclump is that MS 1455.0+2232 is a merger cluster in the very last stage before it becomes fully relaxed. This scenario, however, appears to be unlikely as the cluster shows no further sign of ongoing merger. Moreover, it is not clear if a massive cooling flow could have survived this kind of merger. We propose an alternative scenario in which, as for RX J1720.1+2638, MS 1455.0+2232 is the result of the hierarchical collapse of two co-located density perturbations, the first a group-scale perturbation collapse followed by a second cluster-scale perturbation collapse that surrounded, but did not destroy, the first. We suggest that a cooling flow may have begun inside the already collapsed group-scale perturbation and may have been later amplified by the gas compression induced by the infall of the overlying main cluster mass.

P. Mazzotta; M. Markevitch; W. R. Forman; C. Jones; A. Vikhlinin; L. VanSpeybroeck

2001-08-29T23:59:59.000Z

437

InGaAs monolithic interconnected modules (MIM)  

DOE Green Energy (OSTI)

A monolithic interconnected module (MIM) structure has been developed for thermophotovoltaic (TPV) applications. The MIM device consists of many individual InGaAs cells series-connected on a single semi-insulating (S.I.) InP substrate. An infrared (IR) back surface reflector (BSR), placed on the rear surface of the substrate, returns the unused portion of the TPV radiator output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Also, the use of a BSR obviates the need to use a separate filtering element. As a result, MIMs are exposed to the entire emitter output, thereby maximizing output power density. MIMs with an active area of 1 x 1-cm were comprised of 15 cells monolithically connected in series. Both lattice-matched and lattice-mismatched InGaAs/InP devices were produced, with bandgaps of 0.74 and 0.55 eV, respectively. The 0.74-eV modules demonstrated an open-circuit voltage (Voc) of 6.158 V and a fill factor of 74.2% at a short-circuit current (Jsc) of 842 mA/cm{sup 2}, under flashlamp testing. The 0.55-eV modules demonstrated a Voc of 4.849 V and a fill factor of 57.8% at a Jsc of 3.87 A/cm{sup 2}. IR reflectance measurements (i.e., {lambda} > 2 {micro}m) of these devices indicated a reflectivity of {ge} 83%. Latest electrical and optical performance results for the MIMs will be presented.

Fatemi, N.S.; Jenkins, P.P.; Weizer, V.G.; Hoffman, R.W. Jr. [Essential Research, Inc., Cleveland, OH (United States); Wilt, D.M.; Scheiman, D.; Brinker, D. [National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center; Murray, C.S.; Riley, D. [Westinghouse Electric Corp., West Mifflin, PA (United States)

1997-12-31T23:59:59.000Z

438

Extreme Chromatography: Faster, Hotter, SmallerChapter 1 The Theory and Practice of UHPLC and UHPLC-MS  

Science Conference Proceedings (OSTI)

Extreme Chromatography: Faster, Hotter, Smaller Chapter 1 The Theory and Practice of UHPLC and UHPLC-MS Methods and Analyses eChapters Methods - Analyses Books AOCS Press Downloadable pdf of Chapter 1 The Theory a

439

Toward Joint Hypothesis-Tests Seismic Event Screening Analysis: Ms|mb and Event Depth  

SciTech Connect

Well established theory can be used to combine single-phenomenology hypothesis tests into a multi-phenomenology event screening hypothesis test (Fisher's and Tippett's tests). Commonly used standard error in Ms:mb event screening hypothesis test is not fully consistent with physical basis. Improved standard error - Better agreement with physical basis, and correctly partitions error to include Model Error as a component of variance, correctly reduces station noise variance through network averaging. For 2009 DPRK test - Commonly used standard error 'rejects' H0 even with better scaling slope ({beta} = 1, Selby et al.), improved standard error 'fails to rejects' H0.

Anderson, Dale [Los Alamos National Laboratory; Selby, Neil [AWE Blacknest

2012-08-14T23:59:59.000Z

440

Market Research Survey of Commercial Off-The-Shelf (COTS) Portable MS Systems for IAEA Safeguards Applications  

SciTech Connect

This report summarizes the results for the market research survey of mass spectrometers that are deemed pertinent to International Atomic Energy Agency (IAEA) needs and strategic objectives. The focus of the report is on MS instruments that represent currently available (or soon to be) commercial off-the shelf (COTS) technology and weigh less than 400 pounds. A compilation of all available MS instruments (36 COTS and 2 R&D) is presented, along with pertinent information regarding each instrument.

Hart, Garret L.; Hager, George J.; Barinaga, Charles J.; Duckworth, Douglas C.

2013-02-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga ky ms" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Web Site: http://www.coop-program.engr.uga.edu/ms.html UGA Cooperative Engineering Program Development Key Points and Notes.docx  

E-Print Network (OSTI)

Web Site: http://www.coop-program.engr.uga.edu/ms.html UGA Cooperative Engineering Program;Web Site: http://www.coop-program.engr.uga.edu/ms.html UGA Cooperative Engineering Program Development can be earned for their degree. #12;Web Site: http://www.coop-program.engr.uga.edu/ms.html UGA

Arnold, Jonathan

442

Wind Program: Stakeholder Engagement and Outreach  

Wind Powering America (EERE)

Outreach Outreach Printable Version Bookmark and Share The Stakeholder Engagement and Outreach initiative of the U.S. Department of Energy's Wind Program is designed to educate, engage, and enable critical stakeholders to make informed decisions about how wind energy contributes to the U.S. electricity supply. Highlights Resources Wind Resource Maps State Activities What activities are happening in my state? AK AL AR AZ CA CO CT DC DE FL GA HI IA ID IL IN KS KY LA MA MD ME MI MN MO MS MT NC ND NE NH NJ NM NV NY OH OK OR PA RI SC SD TN TX UT VA VT WA WI WV WY Installed wind capacity maps. Features A image of a house with a residential-scale small wind turbine. Small Wind for Homeowners, Farmers, and Businesses Stakeholder Engagement & Outreach Projects

443

Annual Energy Outlook 2012  

Gasoline and Diesel Fuel Update (EIA)

2 2 Source: U.S. Energy Information Administration, Office of Energy Analysis. U.S. Energy Information Administration / Annual Energy Outlook 2010 213 Appendix F Regional Maps Figure F1. United States Census Divisions Pacific East South Central South Atlantic Middle Atlantic New England West South Central West North Central East North Central Mountain AK WA MT WY ID NV UT CO AZ NM TX OK IA KS MO IL IN KY TN MS AL FL GA SC NC WV PA NJ MD DE NY CT VT ME RI MA NH VA WI MI OH NE SD MN ND AR LA OR CA HI Middle Atlantic New England East North Central West North Central Pacific West South Central East South Central South Atlantic Mountain Source: U.S. Energy Information Administration, Office of Integrated Analysis and Forecasting. Appendix F Regional Maps Figure F1. United States Census Divisions U.S. Energy Information Administration | Annual Energy Outlook 2012

444

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Fuels Used and End Uses in Homes in South Region, Divisions, and States, 2009" 0 Fuels Used and End Uses in Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Fuels Used and End Uses",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX" "Total Homes",113.6,42.1,22.2,3,3.5,7,3.4,5.4,7.1,2.4,4.6,12.8,8.5,4.2

445

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Appliances in Homes in South Region, Divisions, and States, 2009" 0 Appliances in Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Appliances",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX" "Total Homes",113.6,42.1,22.2,3,3.5,7,3.4,5.4,7.1,2.4,4.6,12.8,8.5,4.2

446

Assumptions to the Annual Energy Outlook 2007 Report  

Gasoline and Diesel Fuel Update (EIA)

clothes drying, ceiling fans, coffee makers, spas, home security clothes drying, ceiling fans, coffee makers, spas, home security systems, microwave ovens, set-top boxes, home audio equipment, rechargeable electronics, and VCR/DVDs. In addition to the major equipment-driven end-uses, the average energy consumption per household is projected for other electric and nonelectric appliances. The module's output includes number Energy Information Administration/Assumptions to the Annual Energy Outlook 2007 19 Pacific East South Central South Atlantic Middle Atlantic New England West South Central West North Central East North Central Mountain AK WA MT WY ID NV UT CO AZ NM TX OK IA KS MO IL IN KY TN MS AL FL GA SC NC WV PA NJ MD DE NY CT VT ME RI MA NH VA WI MI OH NE SD MN ND AR LA OR CA HI Middle Atlantic New England East North Central West North Central Pacific West South Central East South Central

447

Microsoft Word - figure_13.doc  

Gasoline and Diesel Fuel Update (EIA)

Egypt Figure 13. Net Interstate Movements, Imports, and Exports of Natural Gas in the United States, 2007 (Million Cubic Feet) Nigeria Algeria 37,483 WA M T I D OR W Y ND SD C A N V UT CO NE KS AZ NM OK TX MN WI MI IA I L IN OH MO AR MS AL GA TN KY FL SC NC WV MD DE VA PA NJ NY CT RI MA VT NH ME LA HI AK Mexico C a n a d a C a n a d a Canada Canada Canada Canada Canada Algeria Canada Canada i i N g e r a Gulf of Mexico Gulf o f M e x i c o Gulf of Mexico Canada Gulf of Mexico Sources: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition," and the Office of Fossil Energy, Natural Gas Imports and Exports.

448

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Air Conditioning in Homes in South Region, Divisions, and States, 2009" 0 Air Conditioning in Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Air Conditioning",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX" "Total Homes",113.6,42.1,22.2,3,3.5,7,3.4,5.4,7.1,2.4,4.6,12.8,8.5,4.2

449

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Water Heating in U.S. Homes in South Region, Divisions, and States, 2009" 0 Water Heating in U.S. Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Water Heating",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX" "Total Homes",113.6,42.1,22.2,3,3.5,7,3.4,5.4,7.1,2.4,4.6,12.8,8.5,4.2

450

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Space Heating in U.S. Homes in South Region, Divisions, and States, 2009" 0 Space Heating in U.S. Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Space Heating",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX" "Total Homes",113.6,42.1,22.2,3,3.5,7,3.4,5.4,7.1,2.4,4.6,12.8,8.5,4.2

451

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Televisions in Homes in South Region, Divisions, and States, 2009" 0 Televisions in Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Televisions",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX" "Total Homes",113.6,42.1,22.2,3,3.5,7,3.4,5.4,7.1,2.4,4.6,12.8,8.5,4.2

452

" Million Housing Units, Final"  

U.S. Energy Information Administration (EIA) Indexed Site

0 Household Demographics of Homes in South Region, Divisions, and States, 2009" 0 Household Demographics of Homes in South Region, Divisions, and States, 2009" " Million Housing Units, Final" ,,"South Census Region" ,,,"South Atlantic Census Division",,,,,,"East South Central Census Division",,,"West South Central Census Division" ,,,,,,,,,"Total East South Central",,,"Total West South Central" ,"Total U.S.1 (millions)",,"Total South Atlantic" ,,"Total South",,,,,"DC, DE, MD, WV",,,,"AL, KY, MS",,,"AR, LA, OK" "Household Demographics",,,,"VA","GA","FL",,"NC, SC",,"TN",,,"TX" "Total Homes",113.6,42.1,22.2,3,3.5,7,3.4,5.4,7.1,2.4,4.6,12.8,8.5,4.2

453

EIA - Natural Gas Pipeline Network - Largest Natural Gas Pipeline Systems  

U.S. Energy Information Administration (EIA) Indexed Site

Interstate Pipelines Table Interstate Pipelines Table About U.S. Natural Gas Pipelines - Transporting Natural Gas based on data through 2007/2008 with selected updates Thirty Largest U.S. Interstate Natural Gas Pipeline Systems, 2008 (Ranked by system capacity) Pipeline Name Market Regions Served Primary Supply Regions States in Which Pipeline Operates Transported in 2007 (million dekatherm)1 System Capacity (MMcf/d) 2 System Mileage Columbia Gas Transmission Co. Northeast Southwest, Appalachia DE, PA, MD, KY, NC, NJ, NY, OH, VA, WV 1,849 9,350 10,365 Transcontinental Gas Pipeline Co. Northeast, Southeast Southwest AL, GA, LA, MD, MS, NC, NY, SC, TX, VA, GM 2,670 8,466 10,450 Northern Natural Gas Co. Central, Midwest Southwest IA, IL, KS, NE, NM, OK, SD, TX, WI, GM 1,055 7,442 15,874 Texas Eastern Transmission Corp.

454

K2, Photoluminescence of Bandgap-Graded InGaN Wires Grown by ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

455

Price of Elba Island, GA Natural Gas LNG Imports from Equatorial...  

Gasoline and Diesel Fuel Update (EIA)

Equatorial Guinea (Dollars per Thousand Cubic Feet) Price of Elba Island, GA Natural Gas LNG Imports from Equatorial Guinea (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1...

456

Price of Elba Island, GA Natural Gas LNG Imports from Nigeria...  

Annual Energy Outlook 2012 (EIA)

Nigeria (Nominal Dollars per Thousand Cubic Feet) Price of Elba Island, GA Natural Gas LNG Imports from Nigeria (Nominal Dollars per Thousand Cubic Feet) Decade Year-0 Year-1...

457

Metalorganic Vapor-Phase Epitaxial Growth and Characterization of Quaternary AlGaInN  

SciTech Connect

In this letter we report the growth (by MOVPE) and characterization of quaternary AlGaInN. A combination of PL, high-resolution XRD, and RBS characterizations enables us to explore and delineate the contours of equil-emission energy and lattice parameters as functions of the quaternary compositions. The observation of room temperature PL emission as short as 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GdnN MQW heterostructures have also been grown; both x-ray diffraction and PL measurement suggest the possibility of incorporating this quaternary into optoelectronic devices.

BANAS, MICHAEL ANTHONY; CRAWFORD, MARY H.; FIGIEL, JEFFREY J.; HAN, JUNG; LEE, STEPHEN R.; MYERS JR., SAMUEL M.; PETERSON, GARY D.

1999-09-27T23:59:59.000Z

458

Correlation of doping, structure, and carrier dynamics in a single GaN nanorod  

E-Print Network (OSTI)

We report the nanoscale optical investigation of a single GaN p-n junction nanorod by cathodoluminescence (CL) in a scanning transmission electron microscope. CL emission characteristic of dopant-related transitions was ...

Zhou, Xiang

459

II2, GaN/AlN Heterostructures on Vertical {111} Fin Facets of Si (110)  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

460

Terahertz waveguide spectroscopy of two-dimensional plasmons in GaAs  

E-Print Network (OSTI)

The electrical characteristics of high-mobility, two-dimensional electron gas (2DEG) systems, such as GaAs quantum wells, have been well-studied at low frequencies and in extreme conditions of high magnetic fields and ...

Harris, C. Thomas (Charles Thomas)

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga ky ms" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Millimeter-wave GaN high electron mobility transistors and their integration with silicon electronics  

E-Print Network (OSTI)

In spite of the great progress in performance achieved during the last few years, GaN high electron mobility transistors (HEMTs) still have several important issues to be solved for millimeter-wave (30 ~ 300 GHz) applications. ...

Chung, Jinwook W. (Jinwook Will)

2011-01-01T23:59:59.000Z

462

RF Power Degradation of GaN High Electron Mobility Transistors  

E-Print Network (OSTI)

We have developed a versatile methodology to systematically investigate the RF reliability of GaN High-Electron Mobility Transistors. Our technique utilizes RF and DC figures of merit to diagnose the degradation of RF ...

Joh, Jungwoo

463

G3, Improvement of InGaZnO 4 TFT Device Performance on Glass ...  

Science Conference Proceedings (OSTI)

I4, Electrical Spin Injection in a Hybrid Organic/Inorganic Spin-Polarized Light Emitting Diode (Spin-LED) I5, Properties of MnAs/GaMnAs/MnAs Magnetic...

464

Lattice-Matched GaNPAs-On-Silicon Tandem Solar Cells  

DOE Green Energy (OSTI)

A two-junction device consisting of a 1.7-eV GaNPAs junction on a 1.1-eV silicon junction has the theoretical potential to achieve nearly optimal efficiency for a two-junction tandem cell. We have demonstrated a monolithic III-V-on-silicon tandem solar cell in which most of the III-V layers are nearly lattice-matched to the silicon substrate. The cell includes a 1.8 eV GaNPAs top cell, a GaP-based tunnel junction (TJ), and a diffused silicon junction formed during the epitaxial growth of GaNP on the silicon substrate. This tandem on silicon has a Voc of 1.53 V and an AM1.5G efficiency of 5.2% without any antireflection coating. Low currents in the top cell are the primary limitation to higher efficiency at this point.

Geisz, J. F.; Olson, J. M.; Friedman, D. J.; Jones, K. M.; Reedy, R. C.; Romero, M. J.

2005-02-01T23:59:59.000Z

465

Microsoft Word - gmc GA21 AOCS Report -final 9-10-07.doc  

Science Conference Proceedings (OSTI)

Certified Reference Materials AOCS 0407-A and AOCS 0407-B Report of the certification process for Conventional and Event GA21 Maize (corn) Kernel Certified Reference Materials G. Clapper and R. Cantrill

466

2013-2014 Student Health Services Health Promotion GA IMPACT Program Instructor  

E-Print Network (OSTI)

schedule. · Ability to conduct research and work on program development2013-2014 Student Health Services ­ Health Promotion GA IMPACT Program Description The IMPACT program seeks to provide students with education and feedback

Tullos, Desiree

467

Anisotropic intermediate valence in Yb2M3Ga9 (M = Rh, Ir)  

SciTech Connect

The intermediate valence compounds Yb{sub 2}M{sub 3}Ga{sub 9} (M = Rh, Ir) exhibit an anisotropic magnetic susceptibility. We report measurements of the temperature dependence of the 4f occupation number, n{sub f}(T), for Yb{sub 2}M{sub 3}Ga{sub 9} as well as the magnetic inelastic neutron scattering spectrum S{sub mag}({Delta}E) at 12 and 300 K for Yb{sub 2}Rh{sub 3}Ga{sub 9}. Both n{sub f}(T) and S{sub mag}({Delta}E) were calculated for the Anderson impurity model with crystal field terms within an approach based on the non-crossing approximation. These results corroborate the importance of crystal field effects in these materials; they also suggest that Anderson lattice effects are important to the physics of Yb{sub 2}M{sub 3}Ga{sub 9}.

Christianson, A.D.; Lawrence, J.M.; Lobos, A.M.; Aligia, A.A.; Bauer, E.D.; Moreno, N.O.; Booth, C.H.; Goremychkin, E.A.; Sarrao, J.L.; Thompson, J.D.; Batista, C.D.; Trouw, F.R.; Hehlen, M.P.

2005-04-26T23:59:59.000Z

468

In situ studies of the effect of silicon on GaN growth modes.  

SciTech Connect

We present real-time X-ray scattering studies of the influence of silicon on the homoepitaxial growth mode of GaN grown by metal-organic vapor-phase epitaxy. Both annealing of Si-doped GaN and surface dosing of GaN with disilane are shown to change the mode of subsequent growth from step-flow to layer-by-layer. By comparing the growth behavior induced by doped layers which have been annealed to that induced by surface dosing, we extract an approximate diffusion coefficient for Si in GaN of 3.5 x 10{sup -18} cm{sup 2}/s at 810{sup o}C.

Munkholm, A.; Stephenson, G. B.; Eastman, J. A.; Auciello, O.; Murty, M. V. R.; Thompson, C.; Fini, P.; Speck, J. S.; DenBaars, S. P.; Northern Illinois Univ.; Univ. of California at Santa Barbara

2000-12-01T23:59:59.000Z

469

Prediction of plasma enhanced deposition process using GA-Optimized GRNN  

Science Conference Proceedings (OSTI)

A genetic algorithm (GA)-based optimization of generalized regression neural network (GRNN) was presented and evaluated with statistically characterized plasma deposition data. The film characteristics to model were deposition rate and positive charge ...

Byungwhan Kim; Dukwoo Lee; Seung Soo Han

2006-05-01T23:59:59.000Z

470

Electroluminescense from InGaN Quantum Dots, in a Monolithically ...  

Science Conference Proceedings (OSTI)

We present an electrically driven structure based on a monolithically GaN/AlInN cavity with a single quantum dot layer grown by MOVPE. The device was grown...

471

GA 200-500 (VSD): Oil-injected rotary screw compressors, 200 ...  

U.S. Energy Information Administration (EIA)

GA 200-500 (VSD): Oil-injected rotary screw compressors, 200-500 kW / 268-670 hp.,Kunshan CompAirs Machinery Plant Co.,Ltd is the leading air ...

472

MOCVD growth of In GaP-based heterostructures for light emitting devices  

E-Print Network (OSTI)

In this work, we examine fundamental materials processes in the growth of indium gallium phosphide (InGaP) via metalorganic chemical vapor deposition (MOCVD). In particular, we realize improvements in the epitaxial integration ...

McGill, Lisa Megan, 1975-

2004-01-01T23:59:59.000Z

473

JJ3, Anisotropic Carrier Mobility in GaN Quantum Well  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

474

LATE NEWS: L7, Molecular Beam Epitaxy of N-Polar InGaN  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

475

Y5, Electrochemical Etching of GaN and Its Applications  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

476

Collapse for Higher Gate Voltages in N-Polar GaN  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

477

K7, Self-Assembled GaN/AlN Nanowire Superlattices on Si toward ...  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

478

N7, Olefin Metathesis Reaction on GaN (0001) Surfaces  

Science Conference Proceedings (OSTI)

L6, PECVD-SiN, Si or Si/Al2O3-Capped ED-Mode AlN/GaN Inverters Hide details for [

479

The Luminosity Function of MS2255.7+2039 at z=0.288  

E-Print Network (OSTI)

The luminosity function of MS2255.7+2039 at z=0.288 is determined down to atotal magnitude of R ~ 24, corresponding to M_R ~ -17 (H_0 = 50 km/s/Mpc). Thedata are corrected for incompleteness and crowding using detailed simulations.We find that the luminosity function is steeper than a standard Schechterfunction at faint magnitudes, and shows an excess of galaxies below M_R ~ -19.After corrections for light loss and crowding, the data can be described by asum of two Schechter functions, one with M_R = -22.8 and alpha = -1.0, and onesteeper with M_R = -18.9 and alpha = -1.5, representing the dwarf population. Astraight-line fit to the faint part yields a slope similar to the Schechteralpha = -1.5 of the dwarf population. The luminosity function of MS2255.7+2039is compared to other clusters at lower redshifts, and does not show anysignificant difference. The redshift range for clusters in which increasednumber of dwarf galaxies have been found is therefore extended to higherredshifts.

Naslund, M; Huldtgren, M

2000-01-01T23:59:59.000Z

480

Pure electron plasmas confined for 90 ms in a stellarator without electron sources or internal objects  

SciTech Connect

We report on the creation and up to 90 ms sustainment of pure electron plasmas confined in a stellarator without internal objects. Injection of positrons into such plasmas is expected to lead to the creation of the first electron-positron plasma experiments. These newly created plasmas will also allow a study of pure electron plasmas without the perturbing presence of internal objects. The plasmas were created by thermionic emission of electrons from a heated, biased filament that was retracted in 20 ms. The confinement of these transient plasmas is different from that of steady state plasmas with internal objects and emissive filaments, and is generally shorter, limited by ion buildup. The decay time is increased by lowering the neutral pressure, lowering the electron plasma temperature, or operating with neutrals with high ionization energies (helium). These findings are all consistent with ion accumulation being the cause for the shorter than expected confinement times. The magnetic field strength also moderately increases the decay times. The deleterious effect of ions is not expected to imply a similar deleterious effect when introducing positrons, but it implies that ion accumulation must be avoided also in an electron-positron experiment.

Brenner, P. W.; Sunn Pedersen, T.

2012-05-15T23:59:59.000Z

Note: This page contains sample records for the topic "ga ky ms" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Temperature dependence and current transport mechanisms in Al{sub x}Ga{sub 1-x}N Schottky rectifiers  

SciTech Connect

GaN and Al{sub 0.25}Ga{sub 0.75}N lateral Schottky rectifiers were fabricated either with (GaN) or without (AlGaN) edge termination. The reverse breakdown voltage V{sub B} (3.1 kV for GaN; 4.3 kV for AlGaN) displayed a negative temperature coefficient of -6.0{+-}0.4 V K{sup -1} for both types of rectifiers. The reverse current originated from contact periphery leakage at moderate bias, while the forward turn-on voltage at a current density of 100 A cm-2 was {approx}5 V for GaN and {approx}7.5 V for AlGaN. The on-state resistances, R{sub ON}, were 50 m{omega} cm2 for GaN and 75 m{omega} cm2 for AlGaN, producing figures-of-merit (V{sub RB}){sup 2}/R{sub ON} of 192 and 246 MW cm-2, respectively. The activation energy of the reverse leakage was 0.13 eV at moderate bias. (c) 2000 American Institute of Physics.

Zhang, A. P. [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States); Dang, G. [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States); Ren, F. [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States); Han, J. [Sandia National Laboratories, Albuquerque, New Mexico 87195 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87195 (United States); Polyakov, A. Y. [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation)] [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation); Smirnov, N. B. [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation)] [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation); Govorkov, A. V. [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation)] [Institute of Rare Metals, Moscow 109017, Russia (Russian Federation); Redwing, J. M. [Epitronics, Phoenix, Arizona 85027 (United States)] [Epitronics, Phoenix, Arizona 85027 (United States); Cho, H. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Pearton, S. J. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)] [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)

2000-06-19T23:59:59.000Z

482

Development of 1.25 eV InGaAsN for triple junction solar cells  

DOE Green Energy (OSTI)

Development of next generation high efficiency space monolithic multifunction solar cells will involve the development of new materials lattice matched to GaAs. One promising material is 1.05 eV InGaAsN, to be used in a four junction GaInP{sub 2}/GaAs/InGaAsN/Ge device. The AMO theoretical efficiency of such a device is 38--42%. Development of the 1.05 eV InGaAsN material for photovoltaic applications, however, has been difficult. Low electron mobilities and short minority carrier lifetimes have resulted in short minority carrier diffusion lengths. Increasing the nitrogen incorporation decreases the minority carrier lifetime. The authors are looking at a more modest proposal, developing 1.25 eV InGaAsN for a triple junction GaInP{sub 2}/InGaAsN/Ge device. The AMO theoretical efficiency of this device is 30--34%. Less nitrogen and indium are required to lower the bandgap to 1.25 eV and maintain the lattice matching to GaAs. Hence, development and optimization of the 1.25 eV material for photovoltaic devices should be easier than that for the 1.05 eV material.

LI,N.Y.; SHARPS,P.R.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-05-16T23:59:59.000Z

483

High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH{sub 3}-based molecular beam epitaxy  

SciTech Connect

High external quantum efficiency (EQE) p-i-n heterojunction solar cells grown by NH{sub 3}-based molecular beam epitaxy are presented. EQE values including optical losses are greater than 50% with fill-factors over 72% when illuminated with a 1 sun AM0 spectrum. Optical absorption measurements in conjunction with EQE measurements indicate an internal quantum efficiency greater than 90% for the InGaN absorbing layer. By adjusting the thickness of the top p-type GaN window contact layer, it is shown that the short-wavelength (<365 nm) quantum efficiency is limited by the minority carrier diffusion length in highly Mg-doped p-GaN.

Lang, J. R.; Hurni, C. A.; Cruz, S. C.; Matioli, E.; Speck, J. S. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Neufeld, C. J.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2011-03-28T23:59:59.000Z

484

Electrically active Er doping in InAs, In{sub 0.53}Ga{sub 0.47}As, and GaAs  

SciTech Connect

The electron concentration in dilute alloys of Er in GaAs, In{sub 0.53}Ga{sub 0.47}As, and InAs grown by molecular beam epitaxy is studied as a function of Er concentration and In content. Using first-principles calculations based on hybrid density functional theory, we attribute an observed increase in conduction electron concentration to Er incorporation on interstitial sites. Er also incorporates on substitutional sites where it is isovalent and electrically inactive. The formation energy of interstitial Er in InAs is significantly smaller than in GaAs, allowing for more electrically active Er in InAs. The results provide insight into characteristics of rare-earth elements as dopants in semiconductors.

Burke, Peter G.; Ismer, Lars; Lu Hong; Frantz, Elan; Janotti, Anderson; Van de Walle, Chris G.; Bowers, John E.; Gossard, Arthur C. [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

2012-12-03T23:59:59.000Z

485

Reduction of Solvent Effect in Reverse Phase Gradient Elution LC-ICP-MS  

DOE Green Energy (OSTI)

Quantification in liquid chromatography (LC) is becoming very important as more researchers are using LC, not as an analytical tool itself, but as a sample introduction system for other analytical instruments. The ability of LC instrumentation to quickly separate a wide variety of compounds makes it ideal for analysis of complex mixtures. For elemental speciation, LC is joined with inductively coupled plasma mass spectrometry (ICP-MS) to separate and detect metal-containing, organic compounds in complex mixtures, such as biological samples. Often, the solvent gradients required to perform complex separations will cause matrix effects within the plasma. This limits the sensitivity of the ICP-MS and the quantification methods available for use in such analyses. Traditionally, isotope dilution has been the method of choice for LC-ICP-MS quantification. The use of naturally abundant isotopes of a single element in quantification corrects for most of the effects that LC solvent gradients produce within the plasma. However, not all elements of interest in speciation studies have multiple naturally occurring isotopes; and polyatomic interferences for a given isotope can develop within the plasma, depending on the solvent matrix. This is the case for reverse phase LC separations, where increasing amounts of organic solvent are required. For such separations, an alternative to isotope dilution for quantification would be is needed. To this end, a new method was developed using the Apex-Q desolvation system (ESI, Omaha, NE) to couple LC instrumentation with an ICP-MS device. The desolvation power of the system allowed greater concentrations of methanol to be introduced to the plasma prior to destabilization than with direct methanol injection into the plasma. Studies were performed, using simulated and actual linear methanol gradients, to find analyte-internal standard (AIS) pairs whose ratio remains consistent (deviations {+-} 10%) over methanol concentration ranges of 5%-35% (simulated) and 8%-32% (actual). Quadrupole (low resolution) and sector field (high resolution) ICP-MS instrumentation were utilized in these studies. Once an AIS pair is determined, quantification studies can be performed. First, an analysis is performed by adding both elements of the AIS pair post-column while performing the gradient elution without sample injection. A comparison of the ratio of the measured intensities to the atomic ratio of the two standards is used to determine a correction factor that can be used to account for the matrix effects caused by the mobile phase. Then, organic and/or biological molecules containing one of the two elements in the AIS pair are injected into the LC column. A gradient method is used to vary the methanol-water mixture in the mobile phase and to separate out the compounds in a given sample. A standard solution of the second ion in the AIS pair is added continuously post-column. By comparing the ratio of the measured intensities to the atomic ratio of the eluting compound and internal standard, the concentration of the injected compound can be determined.

Patrick Allen Sullivan

2005-12-17T23:59:59.000Z

486

GaInNAs Junctions for Next-Generation Concentrators: Progress and Prospects  

DOE Green Energy (OSTI)

We discuss progress in the development of GaInNAs junctions for application in next-generation multijunction concentrator cells. A significant development is the demonstration of near-100% internal quantum efficiencies in junctions grown by molecular-beam epitaxy. Testing at high currents validates the compatibility of these devices with concentrator operation. The efficiencies of several next-generation multijunction structures incorporating these state-of-the-art GaInNAs junctions are projected.

Friedman, D. J.; Ptak, A. J.; Kurtz, S. R.; Geisz, J. F.; Kiehl, J.

2005-08-01T23:59:59.000Z

487

Putting the Pieces Together: High-performance LC-MS/MS Provides Network-, Pathway-, and Protein-level Perspectives in Populus  

SciTech Connect

High-performance mass spectrometry (MS)-based proteomics enabled the construction of a detailed proteome atlas for Populus, a woody perennial plant model organism. Optimization of experimental procedures and implementation of current state-of-the-art instrumentation afforded the most detailed look into the predicted proteome space of Populus, offering varying proteome perspectives: 1) network-wide, 2) pathway-specific, and 3) protein-level viewpoints. Together, enhanced protein retrieval through a detergent-based lysis approach and maximized peptide sampling via the dual-pressure linear ion trap mass spectrometer (LTQ Velos), have resulted in the identification of 63,056 tryptic peptides. The technological advancements, specifically spectral- acquisition and sequencing speed, afforded the deepest look into the Populus proteome, with peptide abundances spanning 6 orders of magnitude and mapping to~25% of the predicted proteome space. In total, tryptic peptides mapped to 13,574 protein assignments across four organ-types: mature (fully expanded, leaf plastichronic index (LPI) 10-12) leaf, young (juvenile, LPI 4-6) leaf, root, and stem. To resolve protein ambiguity, identified proteins were grouped by sequence similarity ( 90%), thereby reducing the protein assignments into 7,538 protein groups. In addition, this large-scale data set features the first systems-wide survey of protein expression across different Populus organs. As a demonstration of the precision and comprehensiveness of the semi-quantitative analysis, we were able to contrast two stages of leaf development, mature versus young leaf. Statistical comparison through ANOVA analysis revealed 1,432 protein groups that exhibited statistically significant (p 0.01) differences in protein abundance. Experimental validation of the metabolic circuitry expected in mature leaf (characterized by photosynthesis and carbon fixation) compared to young leaf (characterized by rapid growth and moderate photosynthetic activities) strongly testifies to the credibility of the approach. Instead of quantitatively comparing a few proteins, a systems view of all the changes associated with a given cellular perturbation could be made.

Abraham, Paul E [ORNL; Giannone, Richard J [ORNL; Adams, Rachel M [ORNL; Kalluri, Udaya C [ORNL; Tuskan, Gerald A [ORNL; Hettich, Robert {Bob} L [ORNL

2013-01-01T23:59:59.000Z

488

Single-event phenomena in GaAs devices and circuits  

Science Conference Proceedings (OSTI)

The single-event upset (SEU) characteristics of GaAs devices and circuits are reviewed. GaAs FET-based integrated circuits (IC`s) are susceptible to upsets from both cosmic-ray heavy ions and protons trapped in the Earth`s radiation belts. The origin of the SEU sensitivity of GaAs IC`s is discussed in terms of both device-level and circuit-level considerations. At the device level, efficient charge-enhancement mechanisms through which more charge can be collected than is deposited by the ion have a significant negative impact on the SEU characteristics of GaAs IC`s. At the circuit level, different GaAs digital logic topologies exhibit different levels of sensitivity to SEU because of variations in parameters, including logic levels, capacitances, and the degree of gate or peripheral isolation. The operational and SEU characteristics of several different GaAs logic families are discussed. Recent advances in materials and processing that provide possible solutions to the SEU problem are addressed.

McMorrow, D.; Melinger, J.S.; Campbell, A.B. III; Weatherford, T.R. [Naval Research Lab., Washington, DC (United States); Buchner, S.; Knudson, A.R.; Tran, L.H. [SFA Inc., Landover, MD (United States)

1996-04-01T23:59:59.000Z

489

GaN CVD Reactions: Hydrogen and Ammonia Decomposition and the Desorption of Gallium  

DOE Green Energy (OSTI)

Isotopic labeling experiments have revealed correlations between hydrogen reactions, Ga desorption, and ammonia decomposition in GaN CVD. Low energy electron diffraction (LEED) and temperature programmed desorption (TPD) were used to demonstrate that hydrogen atoms are available on the surface for reaction after exposing GaN(0001) to deuterium at elevated temperatures. Hydrogen reactions also lowered the temperature for Ga desorption significantly. Ammonia did not decompose on the surface before hydrogen exposure. However, after hydrogen reactions altered the surface, N15H3 did undergo both reversible and irreversible decomposition. This also resulted in the desorption of N2 of mixed isotopes below the onset of GaN sublimation, This suggests that the driving force of the high nitrogen-nitrogen bond strength (226 kcal/mol) can lead to the removal of nitrogen from the substrate when the surface is nitrogen rich. Overall, these findings indicate that hydrogen can influence G-aN CVD significantly, being a common factor in the reactivity of the surface, the desorption of Ga, and the decomposition of ammonia.

Bartram, Michael E.; Creighton, J. Randall

1999-05-26T23:59:59.000Z

490

1-MeV-Electron Irradiation of GaInAsN Cells: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the GaInAsN cells that are measured to retain 933% and 894% of their original efficiency after exposure to 5 X 1014 and 1 X 1015 cm-2 1-MeV electrons, respectively. The rate of degradation is not correlated with the performance at beginning of life (BOL). The depletion width remains essentially unchanged, increasing by< 1%. Temperature-coefficient data for GaInAsN cells are also presented. These numbers are used to project the efficiency of GaInAsN-containing multijunction cells. The GaInAsN junction is not currently predicted to increase the efficiencies of the multijunction cells. Nevertheless, GaInAsN-containing multijunction cell efficiencies are predicted to be comparable to those of the conventional structures, and even small improvements in the GaInAsN cell may lead to higher multijunction cell efficiencies, especially for high-radiation applications and when cell operating temperature is low.

Kurtz, S.; King, R. R.; Edmondson, K. M.; Friedman, D. J.; Karam, N. H.

2002-05-01T23:59:59.000Z

491

GaNPAs Solar Cells that Can Be Lattice-Matched to Silicon  

DOE Green Energy (OSTI)

III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We have proposed the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct bandgaps in the range of 1.5 to 2.0 eV. We have demonstrated the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and shown improvements in material quality by reducing carbon and hydrogen impurities through optimization of growth conditions. We have achieved quantum efficiencies (QE) in these cells as high as 60% and PL lifetimes as high as 3.0 ns.

Geisz, J. F.; Friedman, D. J.; McMahon, W. E.; Ptak, A. J.; Kibbler, A. E.; Olson, J. M.; Kurtz, S.; Kramer, C.; Young, M.; Duda, A.; Reedy, R. C.; Keyes, B. M.; Dippo, P.; Metzger, W. K.

2003-05-01T23:59:59.000Z

492

2 {mu}m laterally coupled distributed-feedback GaSb-based metamorphic laser grown on a GaAs substrate  

SciTech Connect

We report a type-I GaSb-based laterally coupled distributed-feedback (DFB) laser grown on a GaAs substrate operating continuous wave at room temperature. The laser structure was designed to operate near a wavelength of 2 {mu}m and was grown metamorphically with solid-source molecular beam epitaxy. The device was fabricated using a 6th-order deep etch grating structure as part of the sidewalls of the narrow ridge waveguide. The DFB laser emits total output power of up to 40 mW in a single longitudinal mode operation at a heat-sink temperature of 20 Degree-Sign C.

Apiratikul, P.; He, L.; Richardson, C. J. K. [Laboratory for Physical Sciences, 8050 Greenmead Drive, College Park, Maryland 20740 (United States)] [Laboratory for Physical Sciences, 8050 Greenmead Drive, College Park, Maryland 20740 (United States)

2013-06-10T23:59:59.000Z

493

Critical film thickness dependence on As flux in In{sub 0.27}Ga{sub 0.73}As/GaAs(001) films  

SciTech Connect

The transition between planar and nonplanar growth is examined for compressively strained In{sub 0.27}Ga{sub 0.73}As/GaAs(001) films using reflection high energy electron diffraction, atomic force microscopy, and scanning tunneling microscopy (STM). For a narrow range of temperature and composition, the critical thickness (t{sub SK}) is strongly dependent on As flux. For high values of As flux, t{sub SK} increases by more than a factor of 2. The morphology of three-dimensional islands formed during the initial stages of nonplanar growth is also characterized by high resolution STM.

Riposan, A.; Mirecki Millunchick, J.; Pearson, Chris [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Department of Computer Science, Engineering Science, and Physics, University of Michigan-Flint, Flint, Michigan 48502 (United States)

2007-02-26T23:59:59.000Z

494

Theoretical And Experimental Studies Of The Effects Of Rapid Thermal Annealing In GaAs/AlGaAs Quantum Dots Grown By Droplet Epitaxy  

Science Conference Proceedings (OSTI)

We fabricated low-density GaAs/AlGaAs quantum dots for single photon source by droplet epitaxy. We investigated the emission energies of the dots and underlying superlattice by using photoluminescence and cathodoluminescence measurements. By forming a mesa etched structure, we distinguished the transitions from the superlattice and the dots. And we calculated the diffusion length in this system from the peak shift of the superlattice, and applied the diffusion to the dots to investigate the emission energy shift of the QDs.z

Moon, P. [Nano Convergence Devices Center, Korea Institute of Science and Technology, Seoul (Korea, Republic of); School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa (Japan); Ha, S.-K.; Song, J. D.; Lim, J. Y.; Choi, W. J.; Han, I. K.; Lee, J. I. [Nano Convergence Devices Center, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Bounouar, S.; Donatini, F.; Dang, L. S.; Poizat, J. P. [CEA/CNRS/UJF team 'Nanophysics and semiconductors', Institute Neel/CNRS-UJF, Grenoble (France); Kim, J. S. [Department of Physics, Yeungnam University, Gyeonsan (Korea, Republic of)

2011-12-23T23:59:59.000Z

495

DOE/EIA-0131(96) Distribution Category/UC-960 Natural Gas  

Gasoline and Diesel Fuel Update (EIA)

ID ID OR WY ND SD CA NV UT CO NE KS AZ NM OK TX MN WI MI IA IL IN OH MO AR MS AL GA TN KY FL SC NC WV MD DE VA PA NJ NY CT RI MA VT NH ME LA HI AK Japan Mexico Mexico Algeria Canada Canada Canada Canada Canada Canada Canada Algeria Canada United Arab Emirates Interstate Movements of Natural Gas in the United States, 1996 (Volumes Reported in Million Cubic Feet) Supplemental Data From Volume To From Volume To (T) AL KY (T) MA ME (T) AL LA MA NH (T) AL MO (T) MA NJ (T) AL SC MD DC CT RI RI MA DE MD VA DC MA CT (T) Trucked Source: Energy Information Administration (EIA), Form EIA-176, "Annual Report of Natural and Supplemental Gas Supply and Disposition." E I A NERGY NFORMATION DMINISTRATION 906,407 355,260 243,866 220 384,311 576,420 823,799 842,114 27,271 126,012 133 602,841 266 579,598 16,837 268,138 48,442 182,511 219,242 86,897 643,401 619,703 8,157 937,806 292,711 869,951 12,316 590,493 118,256

496

San Juan Montana Thrust Belt WY Thrust Belt Black Warrior  

U.S. Energy Information Administration (EIA) Indexed Site

San San Juan Montana Thrust Belt WY Thrust Belt Black Warrior Paradox - San Juan NW (2) Uinta- Piceance Paradox - San Juan SE (2) Florida Peninsula Appalachian- NY (1) Appalachian OH-PA (2) Appalachian Eastern PA (3) Appalachian Southern OH (4) Appalachian Eastern WV (5) Appalachian WV-VA (6) Appalachian TN-KY (7) Piceance Greater Green River Eastern OR-WA Ventura Williston Williston NE (2) Williston NW (1) Williston South (3) Eastern Great Basin Ventura West, Central, East Eastern OR-WA Eastern Great Basin Appalachian Denver Florida Peninsula Black Warrior W Y T h ru st B e lt Powder River Paradox- Uinta- Grtr Green River MT Thrust Belt Powder River North (1) Powder River South (2) Denver North (1) Denver South (3) Denver Middle (2) TX CA MT AZ ID NV NM CO IL OR UT KS WY IA NE SD MN ND OK FL WI MO AL WA GA AR LA MI IN PA NY NC MS TN KY VA OH SC

497