Sample records for ga golden pass

  1. EA-1971: Golden Pass LNG Export and Pipeline Project, Texas and Louisiana

    Broader source: Energy.gov [DOE]

    The Federal Energy Regulatory Commission (FERC), with DOE as a cooperating agency, announced its intent to prepare an EA to analyze the potential environmental impacts of a proposal to construct and operate natural gas liquefaction and export facilities at the existing Golden Pass liquefied natural gas terminal in Jefferson County, Texas. In June 2014, FERC announced that due to changes in the project location and scope, it would prepare an EIS. See DOE/EIS-0501.

  2. EIS-0501: Golden Pass LNG Export and Pipeline Project, Texas and Louisiana

    Broader source: Energy.gov [DOE]

    The Federal Energy Regulatory Commission (FERC) is analyzing the potential environmental impacts of a proposal to construct and operate natural gas liquefaction and export facilities at the existing Golden Pass liquefied natural gas terminal in Jefferson County, Texas. The proposal includes three new compressor stations in Jefferson and Orange Counties, Texas, and Calcasieu Parish, Louisiana; a new 3-mile long pipeline in Calcasieu Parish; and modifications to 11 existing interconnections with other pipeline systems. In 2013, FERC announced its intent to prepare an EA and conducted public scoping. (See DOE/EA-1971.) In June 2014, FERC announced that, due to changes in the project location and scope, it would prepare an EIS. DOE, Office of Fossil Energy – a cooperating agency in preparing the EIS – has an obligation under Section 3 of the Natural Gas Act to authorize the import and export of natural gas, including LNG, unless it finds that the import or export is not consistent with the public interest.

  3. Response of Red-Tailed Hawks and Golden Eagles to Topographical Features, Weather, and Abundance of a Dominant Prey Species at the Altamont Pass Wind Resource Area, California: April 1999-December 2000

    SciTech Connect (OSTI)

    Hoover, S.

    2002-06-01T23:59:59.000Z

    Studies have shown that raptors flying within the Altamont Pass WRA are vulnerable to fatal turbine collisions, possibly because of their specific foraging and flight behavior. Between June 1999 and June 2000, I conducted 346.5 hours of raptor observations within the Atlamont Pass WRA. Behavior was recorded in relation to characteristics of the topography (slope aspect, elevation, and inclination), the weather, and ground squirrel abundance, as determined by active burrow entrances. The most significant finding of this study revealed that red-tailed hawks and golden eagles flew more in strong winds than in weak winds, particularly along hillsides facing into prevailing winds (as opposed to hillsides shielded from the wind). This is likely a result of the birds' use of declivity currents for lift during flights. These results suggest that certain combinations of topography and weather produce wind currents that are sought out by foraging red-tailed hawks and golden eagles within the Altamont Pass WRA. To decrease raptor mortality, mitigation measures can be targeted to specific areas likely to attract foraging raptors because of their capacity to create particularly favorable wind currents.

  4. Structural Transition of Gold Nanoclusters: From the Golden Cage...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transition of Gold Nanoclusters: From the Golden Cage to the Golden Pyramid . Structural Transition of Gold Nanoclusters: From the Golden Cage to the Golden Pyramid . Abstract: How...

  5. Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN

    SciTech Connect (OSTI)

    Sheu, J.K.; Lee, M.L.; Tun, C.J.; Lin, S.W. [Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Electro-Optical Engineering, Southern Taiwan University of Technology, No.1, Nantai St, Yung-Kang City, Tainan 710, Taiwan (China); Institute of Optical Science, National Central University, Jhongli 32001, Taiwan (China)

    2006-01-23T23:59:59.000Z

    This work prepared Al-doped ZnO(AZO) films using dc sputtering to form Schottky contacts onto GaN films with low-temperature-grown GaN cap layer. Application of ultraviolet photodetector showed that spectral responsivity exhibits a narrow bandpass characteristic ranging from 345 to 375 nm. Moreover, unbiased peak responsivity was estimated to be around 0.12 A/W at 365 nm, which corresponds to a quantum efficiency of around 40%. In our study, relatively low responsivity can be explained by the marked absorption of the AZO contact layer. When the reverse biases were below 5 V, the study revealed that dark currents were well below 5x10{sup -12} A even though the samples were annealed at increased temperatures.

  6. Golden Field Office Mission and Functions Statement

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    its mission, Golden works in partnership with industry and DOE's national laboratories on joint R&D projects in such areas as photovoltaics (solar cells), wind energy, biomass,...

  7. Golden Opportunity: Compromise Agreement (2013-SE-1418)

    Broader source: Energy.gov [DOE]

    DOE and Golden Opportunity, Inc. entered into a Compromise Agreement to resolve a case involving the distribution in commerce of noncompliant freezers.

  8. Golden Laboratories and Offices | NREL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC) Environmental AssessmentsGeoffrey(SC) GettingGit GitGlobalGolden Laboratories and

  9. Golden Opportunity: Proposed Penalty (2014-CE-20003)

    Broader source: Energy.gov [DOE]

    DOE alleged in a Notice of Proposed Civil Penalty that Golden Opportunity, Inc. failed to certify room air conditioners, central air conditioners/heat pumps, and residential clothes washers as compliant with the applicable energy conservation standards.

  10. 2012 Annual Planning Summary for Golden Field Office

    Broader source: Energy.gov [DOE]

    The ongoing and projected Environmental Assessments and Environmental Impact Statements for 2012 and 2013 within Golden Field Office.

  11. First Pass | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power AdministrationField8,Dist.New MexicoFinancing OpportunitiesDirectNuclearFirstFirstFirst Pass

  12. Golden-Thompson's inequality for deformed exponentials

    E-Print Network [OSTI]

    Frank Hansen

    2014-10-21T23:59:59.000Z

    Deformed logarithms and their inverse functions, the deformed exponentials, are important tools in the theory of non-additive entropies and non-extensive statistical mechanics. We formulate and prove counterparts of Golden-Thompson's trace inequality for q-exponentials with parameter q in the interval [1,3].

  13. SEMI-ANNUAL REPORTS FOR GOLDEN PASS PRODUCTS LLC - FE DKT. NO...

    Broader source: Energy.gov (indexed) [DOE]

    October 2013 April 2014 October 2014 April 2015 More Documents & Publications GULF LNG LIQUEFACTION COMPANY, LLC - FE DKT. NO. 12-47-LNG - ORDER 3104 SEMI-ANNUAL REPORTS FOR...

  14. EIS-0501: Golden Pass LNG Export and Pipeline Project, Texas and Louisiana

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't Your Destiny:Revised FindingDepartmentDepartmentStatement | Department of EnergyFERC

  15. SEMI-ANNUAL REPORTS FOR GOLDEN PASS PRODUCTS LLC - FE DKT. NO. 12-88-LNG -

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn'tOrigin ofEnergy atLLC - FE DKT. 10-160-LNG - ORDER 2913 | Department of EnergyLLC --ORDER

  16. Golden Pass, TX Natural Gas Liquefied Natural Gas Imports (price) (Dollars

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122 40CoalLease(Billion2,12803 Table A1.GasYearper Thousand Cubic Feet)2.46 60per

  17. Golden Pass, TX Natural Gas Liquefied Natural Gas Imports (price) from

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122 40CoalLease(Billion2,12803 Table A1.GasYearper Thousand Cubic Feet)2.46

  18. Golden Pass, TX Natural Gas Liquefied Natural Gas Imports (price) from

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122 40CoalLease(Billion2,12803 Table A1.GasYearper Thousand Cubic Feet)2.46Qatar

  19. Golden Pass, TX Natural Gas Liquefied Natural Gas Imports from Qatar

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122 40CoalLease(Billion2,12803 Table A1.GasYearper Thousand Cubic

  20. SEMI-ANNUAL REPORTS FOR GOLDEN PASS PRODUCTS LLC - FE DKT. NO. 12-88-LNG -

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn April 23, 2014, anEnergyDepartment ofNoneORDER NO. 3554 |NO. 3600 (FTA)3290 |-

  1. Battling Golden Algae: Results suggest preventative lake management approaches

    E-Print Network [OSTI]

    Supercinski, Danielle

    2011-01-01T23:59:59.000Z

    14 tx H2O Winter 2011 Story by Danielle Supercinski Battling golden algae Results suggest preventative lake management approaches Golden algae blooms, or the explosive growth of algae, are known to be toxic, but recent #28;ndings from.... Bryan Brooks at Baylor University, working jointly, recently completed the Lake Granbury and Lake Whitney Assessment Initiative project studying the biology and ecology of golden algae (Prymnesium parvum) in Texas lakes. First appearing in Texas...

  2. Battling golden algae: Results suggest preventative lake managment approaches

    E-Print Network [OSTI]

    Supercinski, Danielle

    2011-01-01T23:59:59.000Z

    14 tx H2O Winter 2011 Story by Danielle Supercinski Battling golden algae Results suggest preventative lake management approaches Golden algae blooms, or the explosive growth of algae, are known to be toxic, but recent #28;ndings from.... Bryan Brooks at Baylor University, working jointly, recently completed the Lake Granbury and Lake Whitney Assessment Initiative project studying the biology and ecology of golden algae (Prymnesium parvum) in Texas lakes. First appearing in Texas...

  3. Golden Opportunity: Order (2014-CE-20003) | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Golden Opportunity had failed to certify that certain models of room air conditioners, central air conditionersheat pumps, and residential clothes washers comply with the...

  4. Golden Valley Electric Association- Sustainable Natural Alternative Power (SNAP) Program

    Broader source: Energy.gov [DOE]

    Golden Valley Electric Association's (GVEA) SNAP program encourages members to install renewable energy generators and connect them to the utility's electrical distribution system by offering an...

  5. ORISE: Securing the Golden State from threats foreign and domestic

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Securing the Golden State from threats foreign and domestic ORISE helps California emergency planners with innovative training on state and local levels To protect the state of...

  6. ORISE: Helping California Prepare for Emergencies through Golden...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Golden Guardian ORISE helps California Governor's Office of Emergency Services plan series of statewide emergency preparedness exercises Spanning more than 160,000 square miles...

  7. Golden Field Office | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33Frequently20,000 RussianBy: Thomas P. D'Agostino,Glen Wattman - Director, OfficeThe Golden

  8. Golden Field Office | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to: navigation, search OpenEI ReferenceJump to: navigation, search Equivalent URI DBpediaGolden

  9. Golden Annual FOIA Report | Department of Energy

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 1112011 Strategic2 OPAM Flash2011-12 OPAMGeneral Guidance onGlenn PodonskyAn overviewGoalsGolden

  10. Golden Grain Energy LLC | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetec AG Contracting Jump to:Echo,GEF JumpGloverville,GogebicGoldGoldenGlades,

  11. Golden, Colorado: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetec AG Contracting Jump to:Echo,GEFLakes, Florida:Golden's Bridge, New

  12. Golden, Colorado: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetec AG Contracting Jump to:Echo,GEFLakes, Florida:Golden's Bridge, New5543°,

  13. Golden, Illinois: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetec AG Contracting Jump to:Echo,GEFLakes, Florida:Golden's Bridge,

  14. International Trade in Natural Gas: Golden Age of LNG?

    E-Print Network [OSTI]

    Gabrieli, John

    International Trade in Natural Gas: Golden Age of LNG? Yichen Du and Sergey Paltsev Report No. 271;1 International Trade in Natural Gas: Golden Age of LNG? Yichen Du* and Sergey Paltsev* Abstract The introduction of liquefied natural gas (LNG) as an option for international trade has created a market for natural gas where

  15. Message Passing with Communication Structures 

    E-Print Network [OSTI]

    Yaikhom, Gagarine

    Abstraction concepts based on process groups have largely dominated the design and implementation of communication patterns in message passing systems. Although such an approach seems pragmatic—given that participating ...

  16. Cognitive training in schizophrenia: golden age or wild west?

    E-Print Network [OSTI]

    Vinogradov, Sophia

    2013-01-01T23:59:59.000Z

    Golden Age or Wild West? Sophia Vinogradov, Melissa Fisher,Address correspondence to Sophia Vinogradov, M.D. , 116A–Francisco, CA 94121; E-mail: sophia. vinogradov@ucsf.edu.

  17. Golden Valley Electric Association- Commercial Lighting Retrofit Rebate Program

    Broader source: Energy.gov [DOE]

    BusBusiness $ense is a Golden Valley Electric Association (GVEA) program designed to increase the efficiency with which energy is used on GVEA's system. It provides rebates of up to $20,000 to...

  18. A golden opportunity: Researchers making progress in understanding toxic algae

    E-Print Network [OSTI]

    Wythe, Kathy

    2008-01-01T23:59:59.000Z

    tx H2O | pg. 20 cientists at three Texas universities investigating golden algae, its explosive growth, and its deadly toxins have dis- covered an apparent competition between golden algae and blue green algae in certain Texas lakes.... Understanding this competition could lead them closer to controlling this harmful algae, the researchers said. ?Our biggest finding so far,? said Dr. Daniel Roelke of Texas AgriLife Research and one of the investigators, ?is that there appears to be a...

  19. Sea Ice in the Global Climate System Kenneth M. Golden1

    E-Print Network [OSTI]

    Golden, Kenneth M.

    Sea Ice in the Global Climate System Kenneth M. Golden1 , Elizabeth Hunke2 , Cecilia Bitz3 Figure 2. The Antarctic sea ice pack with an open lead in the distance. (K. M. Golden) Figure 1. Pancake ice in the Southern Ocean off the coast of East Antarctica. (K. M. Golden

  20. The PASS project architectural model

    SciTech Connect (OSTI)

    Day, C.T.; Loken, S.; Macfarlane, J.F. [Lawrence Berkeley Lab., CA (United States)] [and others

    1994-08-01T23:59:59.000Z

    The PASS project has as its goal the implementation of solutions to the foreseen data access problems of the next generation of scientific experiments. The architectural model results from an evaluation of the operational and technical requirements and is described in terms of an abstract reference model, an implementation model and a discussion of some design aspects. The abstract reference model describes a system that matches the requirements in terms of its components and the mechanisms by which they communicate, but does not discuss policy or design issues that would be necessary to match the model to an actual implementation. Some of these issues are discussed, but more detailed design and simulation work will be necessary before choices can be made.

  1. Academic Programs and Policy 401 Golden Shore, 6th Floor

    E-Print Network [OSTI]

    Ponce, V. Miguel

    Academic Programs and Policy 401 Golden Shore, 6th Floor Long Beach, CA 90802-4210 www for graduation is specified (not just the total for the major): _______ the proposed bachelor's program requires no fewer and no more than 120 units _______ proposed bachelor's degree programs

  2. Portland Cement Concrete Pavement Shannon Golden, Alabama DOT

    E-Print Network [OSTI]

    Portland Cement Concrete Pavement Shannon Golden, Alabama DOT PORTLAND CEMENT CONCRETE PAVEMENT may be substituted for part of the required Portland cement. Substitution of mineral admixtures shall Cement shall not exceed the percentages shown in the following table: MAXIMUM ALLOWABLE SUBSTITUTION

  3. Multivariate extensions of the Golden-Thompson inequality

    E-Print Network [OSTI]

    Frank Hansen

    2014-07-02T23:59:59.000Z

    We study concave trace functions of several operator variables and formulate and prove multivariate generalisations of the Golden-Thompson inequality. The obtained results imply that certain functionals in quantum statistical mechanics have bounds of the same form as they appear in classical physics.

  4. Multifrequency, single pass free electron laser

    DOE Patents [OSTI]

    Szoke, Abraham (Fremont, CA); Prosnitz, Donald (Walnut Creek, CA)

    1985-01-01T23:59:59.000Z

    A method for simultaneous amplification of laser beams with a sequence of frequencies in a single pass, using a relativistic beam of electrons grouped in a sequence of energies corresponding to the sequence of laser beam frequencies. The method allows electrons to pass from one potential well or "bucket" to another adjacent bucket, thus increasing efficiency of trapping and energy conversion.

  5. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current- spreading experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating p-GaN/n-GaN/p-GaN/n-GaN/p-GaN

  6. Message Passing Interface for Python 1 the Message Passing Interface (MPI)

    E-Print Network [OSTI]

    Verschelde, Jan

    Message Passing Interface for Python 1 the Message Passing Interface (MPI) MPI and MPI for Python, and gather processing numpy arrays 3 Probing for Messages nonblocking communications MCS 507 Lecture 38 L-38) MPI for Python 22 November 2013 1 / 37 #12;Message Passing Interface for Python 1 the Message

  7. A golden opportunity: Researchers making progress in understanding toxic algae 

    E-Print Network [OSTI]

    Wythe, Kathy

    2008-01-01T23:59:59.000Z

    Researchers making progress in understanding toxic algae A golden opportunity tx H2O | pg. 21 have examined the organism in coastal, saline environments. ?Our research team represents one of the few in the world that is focused on the dynamics... throughout Texas. Although it can exist in waters without being harmful, the algae has caused major fish kills in five of the state?s river systems. When this algae has explosive increases in its population, called ?blooms,? it secretes toxic chemicals...

  8. Golden Valley Electric Association- Residential Energy Efficiency Rebate Program for Builders

    Broader source: Energy.gov [DOE]

    Golden Valley Electric Association’s (GVEA) Builder $ense program targets home builders who install electrical energy efficiency measures during construction of residential buildings. Newly...

  9. President’s Message – Passing the Baton

    E-Print Network [OSTI]

    Swadron, Stuart P

    2009-01-01T23:59:59.000Z

    of Emergency Medicine President’s Message Passing the BatonINSIDE: President’s Message (continued) S Swadron OpenApplication I n my last message as president of CAL/AAEM, I

  10. Golden Bars of Consensus and the Truth Quark

    E-Print Network [OSTI]

    Frank D. Tony Smith; jr

    2002-05-14T23:59:59.000Z

    Scientists are imprisoned by Golden Bars of Consensus, says Burton Richter (hep-ex/0001012). A case in point is the mass of the Truth Quark. The consensus analysis of the experimental data indicates that the mass of the Truth Quark is about 170 GeV. On the other hand, an alternative analysis of the same data indicates that the mass of the Truth Quark is about 130 GeV. If the design of future experiments, including trigger, event selection, data analysis procedures, error analysis, etc., takes into account only the consensus value, and if the consensus value happens to be incorrect, then results of future experiments might be compromised.

  11. Golden Field Office Reading Room | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33Frequently20,000 RussianBy: Thomas P. D'Agostino,Glen Wattman - Director, OfficeThe Golden Field

  12. ORISE: Helping California Prepare for Emergencies through Golden Guardian

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC)Integrated CodesTransparencyDOE ProjectCrisis andExercise Golden Guardian ORISE

  13. SBOT COLORADO GOLDEN FIELD OFFICE POC Karen Downs Telephone

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn April 23, 2014, anEnergyDepartment of EnergyCOLORADO GOLDEN FIELD OFFICE POC

  14. Golden Beach, Florida: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetec AG Contracting Jump to:Echo,GEF JumpGloverville,GogebicGoldGolden Beach,

  15. Golden Fuel Systems formerly Greasel Conversions Inc | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetec AG Contracting Jump to:Echo,GEF JumpGloverville,GogebicGoldGolden

  16. Golden Glades, Florida: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetec AG Contracting Jump to:Echo,GEF JumpGloverville,GogebicGoldGoldenGlades,

  17. Golden's Bridge, New York: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdfGetec AG Contracting Jump to:Echo,GEFLakes, Florida:Golden's Bridge, New York:

  18. A golden anniversary for space-based treaty verification

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItemResearch >InternshipDepartmentNeutrino-Induced Charged-CurrentN NA golden

  19. Alternative Fuels Data Center: Golden Eagle Distributors Inc. to Convert

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office511041cloth DocumentationProductsAlternative Fuels Clean CitiesStationTrucks Golden Eagle

  20. Golden Spread Electric Cooperative, Inc | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual SiteofEvaluating AGeothermal/Exploration <GlacialGolden Spread Electric Cooperative, Inc

  1. Golden State Holding Group Corporation | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual SiteofEvaluating AGeothermal/Exploration <GlacialGolden Spread Electric Cooperative,

  2. Golden Valley Elec Assn Inc | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual SiteofEvaluating AGeothermal/Exploration <GlacialGolden Spread Electric

  3. Accountable Property Representatives List and Property Pass Signer...

    Broader source: Energy.gov (indexed) [DOE]

    Accountable Property RepresentativesProperty Pass Authorization 1202015 Employee Authorized Organization Phone APR Primary Property Pass Signer PETEET, LISA J. ALL ORGS (202)...

  4. Nucleation of GaN/AlN quantum dots

    SciTech Connect (OSTI)

    Adelmann, C; Daudin, B; Oliver, R; Briggs, G; Rudd, R

    2003-10-13T23:59:59.000Z

    We study the nucleation of GaN islands grown by plasma-assisted molecular-beam epitaxy on AlN in a Stranski-Krastanov mode. In particular, we assess the variation of their height and density as a function of GaN coverage. We show that the GaN growth passes four stages: initially, the growth is layer-by-layer; subsequently, bidimensional precursor islands form, which transform into genuine three-dimensional islands. During the latter stage, the height and the density of the islands increase with GaN coverage until the density saturates. During further GaN growth, the density remains constant and a bimodal height distribution appears. The variation of island height and density as a function of substrate temperature is discussed in the framework of an equilibrium model for Stranski-Krastanov growth [R. E. Rudd et al., Phys. Rev. Lett. 90, 146101 (2003)].

  5. Spherical codes, maximal local packing density, and the golden ratio

    E-Print Network [OSTI]

    A. B. Hopkins; F. H. Stillinger; S. Torquato

    2010-03-18T23:59:59.000Z

    The densest local packing (DLP) problem in d-dimensional Euclidean space Rd involves the placement of N nonoverlapping spheres of unit diameter near an additional fixed unit-diameter sphere such that the greatest distance from the center of the fixed sphere to the centers of any of the N surrounding spheres is minimized. Solutions to the DLP problem are relevant to the realizability of pair correlation functions for packings of nonoverlapping spheres and might prove useful in improving upon the best known upper bounds on the maximum packing fraction of sphere packings in dimensions greater than three. The optimal spherical code problem in Rd involves the placement of the centers of N nonoverlapping spheres of unit diameter onto the surface of a sphere of radius R such that R is minimized. It is proved that in any dimension, all solutions between unity and the golden ratio to the optimal spherical code problem for N spheres are also solutions to the corresponding DLP problem. It follows that for any packing of nonoverlapping spheres of unit diameter, a spherical region of radius less than or equal to the golden ratio centered on an arbitrary sphere center cannot enclose a number of sphere centers greater than one more than the number that can be placed on the region's surface.

  6. Message passing with parallel queue traversal

    DOE Patents [OSTI]

    Underwood, Keith D. (Albuquerque, NM); Brightwell, Ronald B. (Albuquerque, NM); Hemmert, K. Scott (Albuquerque, NM)

    2012-05-01T23:59:59.000Z

    In message passing implementations, associative matching structures are used to permit list entries to be searched in parallel fashion, thereby avoiding the delay of linear list traversal. List management capabilities are provided to support list entry turnover semantics and priority ordering semantics.

  7. On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N- GaN built-in junctions in the n-GaN layer for InGaN/GaN: N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN

  8. The Impact of a Forest Pathogen on the Endangered Golden-cheeked Warbler

    E-Print Network [OSTI]

    Stewart, Laura Roe

    2012-07-16T23:59:59.000Z

    Oak wilt is a fatal disease of oaks caused by the fungus Ceratocystis fagacearum. Loss or degradation of habitat due to the disease may negatively affect the federally endangered golden-cheeked warbler (Setophaga chrysoparia). To assess the impact...

  9. Agenda for the PV Module Reliability Workshop, February 26- 27 2013, Golden, Colorado

    Broader source: Energy.gov [DOE]

    This document is the agenda and poster session information for the NREL 2013 Photovoltaic Module Reliability Workshop, held on February 26-27, 2013 at the National Renewable Energy Laboratory in Golden, CO.

  10. Waterfront developments in the Middle East case study : the Golden Horn Project, Istanbul, Turkey

    E-Print Network [OSTI]

    Alamuddin, Hana S. (Hana Slieman)

    1987-01-01T23:59:59.000Z

    This thesis examines waterfront developments in the Middle East . It concentrates on the Golden Horn project in Istanbul as it raises a number of issues that are central to any such development in that region. In order for ...

  11. The Impact of a Forest Pathogen on the Endangered Golden-cheeked Warbler 

    E-Print Network [OSTI]

    Stewart, Laura Roe

    2012-07-16T23:59:59.000Z

    Oak wilt is a fatal disease of oaks caused by the fungus Ceratocystis fagacearum. Loss or degradation of habitat due to the disease may negatively affect the federally endangered golden-cheeked warbler (Setophaga chrysoparia). To assess the impact...

  12. Golden Rice: Genetically Modified to Reduce Vitamin A Deficiency, Benefit or Hazard?

    E-Print Network [OSTI]

    Buu, MyMy

    2003-01-01T23:59:59.000Z

    2001;125:4-8. 3. Bonetta L. GM crops under new US scrutiny.2). Subsequently, the first GM crops were introduced in thespecifically describing a GM crop, Golden Rice, developed to

  13. O?[]O? nuclear ?-decay of ?²Ga

    E-Print Network [OSTI]

    Hyman, Bruce Carl

    1999-01-01T23:59:59.000Z

    information, MARS was focused such that only fully stripped N=Z ions were passed, with the vast majority of them being Ga. The second phase of the experiment was a I3-y coincidence experiment. At the back-end of MARS, a 1" x 1 '!4" x 3" four..., using the Weinberg-Salam model of electroweak interactions, to be [23]: A& ? d, ?= ? [41n(mz/m )+ln(m /m?)+2K+A +" ]. (16) Here mz is the mass of the Z boson, me the proton mass, mx is the low energy cutoff for the second and third terms that arise...

  14. Factors contributing to nest predation within habitat of the Golden-checked Warbler, Travis County, Texas

    E-Print Network [OSTI]

    Fink, Mark Lewis

    1996-01-01T23:59:59.000Z

    FACTORS CONTRIBUTING TO NEST PREDATION WITHIN HABITAT OF THE GOLDEN-CHEEKED WARBLER, TRAVIS COUNTY, TEXAS A Thesis by MARK LEWIS FINK Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment... of the requirements for the degree of MASTER OF SCIENCE December 1996 Major Subject: Wildlife and Fisheries Sciences FACTORS CONTRIBUTING TO NEST PREDATION WITHIN HABITAT OF THE GOLDEN-CHEEKED WARBLER, TRAVIS COUNTY, TEXAS A Thesis by MARK LEWIS FINK...

  15. Effects of Tree Species Composition and Foraging Effort on the Productivity of Golden-Cheeked Warblers

    E-Print Network [OSTI]

    Marshall, Mike E.

    2012-07-16T23:59:59.000Z

    EFFECTS OF TREE SPECIES COMPOSITION AND FORAGING EFFORT ON THE PRODUCTIVITY OF GOLDEN-CHEEKED WARBLERS A Thesis by MIKE E. MARSHALL Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment... Warblers Copyright 2011 Mike E. Marshall EFFECTS OF TREE SPECIES COMPOSITION AND FORAGING EFFORT ON THE PRODUCTIVITY OF GOLDEN-CHEEKED WARBLERS A Thesis by MIKE E. MARSHALL Submitted to the Office of Graduate Studies of Texas A...

  16. Avian Response to Road Construction Noise with Emphasis on the Endangered Golden-cheeked Warbler

    E-Print Network [OSTI]

    Lackey, Melissa A.

    2011-08-08T23:59:59.000Z

    AVIAN RESPONSE TO ROAD CONSTRUCTION NOISE WITH EMPHASIS ON THE ENDANGERED GOLDEN-CHEEKED WARBLER A Thesis by MELISSA ANNE LACKEY Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment... of the requirements for the degree of MASTER OF SCIENCE May 2010 Major Subject: Wildlife and Fisheries Sciences AVIAN RESPONSE TO ROAD CONSTRUCTION NOISE WITH EMPHASIS ON THE ENDANGERED GOLDEN-CHEEKED WARBLER A Thesis by MELISSA ANNE LACKEY...

  17. Office of Fossil Energy

    Office of Environmental Management (EM)

    GA 2.9 3.0 5.9 Everett, MA 7.7 7.6 15.4 Freeport, TX - - - Golden Pass, TX - - - Gulf LNG, MS - - - Lake Charles, LA - - - Neptune Deepwater Port - - - Northeast Gateway Energy...

  18. San Gorgonio Pass wind energy project, California

    SciTech Connect (OSTI)

    Not Available

    1982-06-01T23:59:59.000Z

    Construction and operation of large-scale wind-turbine fields on approximately 12,780 acres of public land in the San Gorgonio Pass of Palm Springs, California are proposed. The wind farm systems would be operated by Windfarms Limited, U.S. Windpower, Southern California Edison Company, PanAero Corporation, the city of Riverside, and San Gorgonio Farms, Inc. Implementation of the preferred scheme would allow development of wind turbines on public lands except in those areas that have been identified as having resources that are extremely sensitive to development. Positive and negative impacts of the project are discussed.

  19. User Entry Pass | ornl.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del SolStrengthening aTurbulence mayUndergraduateAbout UsUser Agreements UserEntry Pass

  20. TerraPass Inc | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-f <Maintained ByManagement IncDrillbe niceOpen EnergyTerraPass Inc Jump

  1. False Pass Geothermal Area | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualPropertyd8c-a9ae-f8521cbb8489 NoEurope BV Jump to:FASFMI-HDFREDJump to:False Pass Geothermal

  2. Bird Mortaility at the Altamont Pass Wind Resource Area: March 1998--September 2001

    SciTech Connect (OSTI)

    Smallwood, K. S.; Thelander, C. G.

    2005-09-01T23:59:59.000Z

    Over the past 15 years, research has shown that wind turbines in the Altamont Pass Wind Resource Area (APWRA) kill many birds, including raptors, which are protected by the Migratory Bird Treaty Act (MBTA), the Bald and Golden Eagle Protection Act, and/or state and federal Endangered Species Acts. Early research in the APWRA on avian mortality mainly attempted to identify the extent of the problem. In 1998, however, the National Renewable Energy Laboratory (NREL) initiated research to address the causal relationships between wind turbines and bird mortality. NREL funded a project by BioResource Consultants to perform this research directed at identifying and addressing the causes of mortality of various bird species from wind turbines in the APWRA.With 580 megawatts (MW) of installed wind turbine generating capacity in the APWRA, wind turbines there provide up to 1 billion kilowatt-hours (kWh) of emissions-free electricity annually. By identifying and implementing new methods and technologies to reduce or resolve bird mortality in the APWRA, power producers may be able to increase wind turbine electricity production at the site and apply similar mortality-reduction methods at other sites around the state and country.

  3. National Wind Technology Center sitewide, Golden, CO: Environmental assessment

    SciTech Connect (OSTI)

    NONE

    1996-11-01T23:59:59.000Z

    The National Renewable Energy Laboratory (NREL), the nation`s primary solar and renewable energy research laboratory, proposes to expand its wind technology research and development program activities at its National Wind Technology Center (NWTC) near Golden, Colorado. NWTC is an existing wind energy research facility operated by NREL for the US Department of Energy (DOE). Proposed activities include the construction and reuse of buildings and facilities, installation of up to 20 wind turbine test sites, improvements in infrastructure, and subsequent research activities, technology testing, and site operations. In addition to wind turbine test activities, NWTC may be used to support other NREL program activities and small-scale demonstration projects. This document assesses potential consequences to resources within the physical, biological, and human environment, including potential impacts to: air quality, geology and soils, water resources, biological resources, cultural and historic resources, socioeconomic resources, land use, visual resources, noise environment, hazardous materials and waste management, and health and safety conditions. Comment letters were received from several agencies in response to the scoping and predecisional draft reviews. The comments have been incorporated as appropriate into the document with full text of the letters contained in the Appendices. Additionally, information from the Rocky Flats Environmental Technology Site on going sitewide assessment of potential environmental impacts has been reviewed and discussed by representatives of both parties and incorporated into the document as appropriate.

  4. Design of the polarization multi-pass Thomson scattering system

    SciTech Connect (OSTI)

    Yasuhara, R.; Yamada, I.; Kawahata, K.; Funaba, H. [National Institute for Fusion Science, 322-6 Oroshi-cho, Toki, Gifu 509-5292 (Japan); Yoshikawa, M.; Morimoto, M.; Shima, Y.; Kohagura, J.; Sakamoto, M.; Nakashima, Y.; Imai, T. [Plasma Research Center, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan); Minami, T. [Institute of Advanced Energy, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan)

    2012-10-15T23:59:59.000Z

    A novel configuration of the multi-pass Thomson scattering (TS) system is proposed to improve the time resolution and accuracy of electron temperature measurements by use of a polarization control technique. This configuration can realize a perfect coaxial multi-passing at each pass, and the number of round trips is not limited by the optical configuration. To confirm the feasibility of the new method, we installed this system in the GAMMA 10 plasma system. As a result, the integrated scattering signal of the double-pass configuration is about two times larger than that of the single-pass configuration. These results are in good agreement with the design.

  5. 1.Physics Department, Colorado School of Mines, Golden, CO 2. National Renewable Energy Laboratory, Golden, CO 3. United Solar Ovonic, LLC Troy, MI, United States THERMAL ACTIVATION OF DEEP OXYGEN DEFECT FORMATION AND HYDROGEN EFFUSION

    E-Print Network [OSTI]

    was partially supported by a DOE grant through United Solar Ovonics, Inc., under the Solar America Initiative1.Physics Department, Colorado School of Mines, Golden, CO 2. National Renewable Energy Laboratory, Golden, CO 3. United Solar Ovonic, LLC Troy, MI, United States BACKGROUND THERMAL ACTIVATION OF DEEP

  6. The Golden-Thompson inequality: Historical aspects and random matrix applications

    SciTech Connect (OSTI)

    Forrester, Peter J., E-mail: p.forrester@ms.unimelb.edu.au; Thompson, Colin J. [Department of Mathematics and Statistics, The University of Melbourne, Victoria 3010 (Australia)] [Department of Mathematics and Statistics, The University of Melbourne, Victoria 3010 (Australia)

    2014-02-15T23:59:59.000Z

    The Golden-Thompson inequality, Tr?(e{sup A+B}) ? Tr?(e{sup A}e{sup B}) for A, B Hermitian matrices, appeared in independent works by Golden and Thompson published in 1965. Both of these were motivated by considerations in statistical mechanics. In recent years the Golden-Thompson inequality has found applications to random matrix theory. In this article, we detail some historical aspects relating to Thompson's work, giving in particular a hitherto unpublished proof due to Dyson, and correspondence with Pólya. We show too how the 2 × 2 case relates to hyperbolic geometry, and how the original inequality holds true with the trace operation replaced by any unitarily invariant norm. In relation to the random matrix applications, we review its use in the derivation of concentration type lemmas for sums of random matrices due to Ahlswede-Winter, and Oliveira, generalizing various classical results.

  7. The Golden-Thompson inequality --- historical aspects and random matrix applications

    E-Print Network [OSTI]

    Peter J. Forrester; Colin J. Thompson

    2014-08-09T23:59:59.000Z

    The Golden-Thompson inequality, ${\\rm Tr} \\, (e^{A + B}) \\le {\\rm Tr} \\, (e^A e^B)$ for $A,B$ Hermitian matrices, appeared in independent works by Golden and Thompson published in 1965. Both of these were motivated by considerations in statistical mechanics. In recent years the Golden-Thompson inequality has found applications to random matrix theory. In this survey article we detail some historical aspects relating to Thompson's work, giving in particular an hitherto unpublished proof due to Dyson, and correspondence with P\\'olya. We show too how the $2 \\times 2$ case relates to hyperbolic geometry, and how the original inequality holds true with the trace operation replaced by any unitarily invariant norm. In relation to the random matrix applications, we review its use in the derivation of concentration type lemmas for sums of random matrices due to Ahlswede-Winter, and Oliveira, generalizing various classical results.

  8. Analysis of Best Hydraulic Fracturing Practices in the Golden Trend Fields of Oklahoma Shahab D. Mohaghegh, West Virginia University

    E-Print Network [OSTI]

    Mohaghegh, Shahab

    Analysis of Best Hydraulic Fracturing Practices in the Golden Trend Fields of Oklahoma Shahab D of optimized hydraulic fracturing procedure. Detail stimulation data from more than 230 wells in the Golden of hydraulic fractures. Therefore, it is highly recommended that the clastic and carbonate formations

  9. A Split-Decoding Message Passing Algorithm for Low Density Parity Check Decoders

    E-Print Network [OSTI]

    Mohsenin, Tinoosh; Baas, Bevan M.

    2010-01-01T23:59:59.000Z

    Shi, R. (2008). Sliced message passing: High throughputWang, Z. (2007). Efficient message passing ar- chitectureparity check codes under message-passing decoding. IEEE

  10. Golden Sun Fujian Solar Technic Co Ltd GS Solar | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual SiteofEvaluating AGeothermal/Exploration <GlacialGolden Spread Electric Cooperative,Golden

  11. Single Pass Multi-component Harvester

    SciTech Connect (OSTI)

    Reed Hoskinson; J. Richard Hess

    2004-08-01T23:59:59.000Z

    Abstract. In order to meet the U. S. government’s goal of supplementing the energy available from petroleum by increasing the production of energy from renewable resources, increased production of bioenergy has become one of the new goals of the United States government and our society. U.S. Executive Orders and new Federal Legislation have mandated changes in government procedures and caused reorganizations within the government to support these goals. The Biomass Research and Development Initiative is a multi-agency effort to coordinate and accelerate all U.S. Federal biobased products and bioenergy research and development. The Initiative is managed by the National Biomass Coordination Office, which is staffed by both the DOE and the USDA. One of the most readily available sources of biomass from which to produce bioenergy is an agricultural crop residue, of which straw from small grains is the most feasible residue with which to start. For the straw residue to be used its collection must be energy efficient and its removal must not impact the sustainability of the growing environment. In addition, its collection must be economically advantageous to the producer. To do all that, a single pass multi-component harvester system is most desirable. Results from our first prototype suggest that current combines probably do adequate threshing and that a separate chassis can be developed that does additional separation and that is economically feasible.

  12. Operator pencil passing through a given operator

    SciTech Connect (OSTI)

    Biggs, A., E-mail: khudian@manchester.ac.uk, E-mail: adam.biggs@student.manchester.ac.uk; Khudaverdian, H. M., E-mail: khudian@manchester.ac.uk, E-mail: adam.biggs@student.manchester.ac.uk [School of Mathematics, University of Manchester, Oxford Road, Manchester M13 9PL (United Kingdom)

    2013-12-15T23:59:59.000Z

    Let ? be a linear differential operator acting on the space of densities of a given weight ?{sub 0} on a manifold M. One can consider a pencil of operators ?-circumflex(?)=(?{sub ?}) passing through the operator ? such that any ?{sub ?} is a linear differential operator acting on densities of weight ?. This pencil can be identified with a linear differential operator ?-circumflex acting on the algebra of densities of all weights. The existence of an invariant scalar product in the algebra of densities implies a natural decomposition of operators, i.e., pencils of self-adjoint and anti-self-adjoint operators. We study lifting maps that are on one hand equivariant with respect to divergenceless vector fields, and, on the other hand, with values in self-adjoint or anti-self-adjoint operators. In particular, we analyze the relation between these two concepts, and apply it to the study of diff?(M)-equivariant liftings. Finally, we briefly consider the case of liftings equivariant with respect to the algebra of projective transformations and describe all regular self-adjoint and anti-self-adjoint liftings. Our constructions can be considered as a generalisation of equivariant quantisation.

  13. Analysis of the Pass Cavallo shipwreck assemblage, Matagorda Bay, Texas

    E-Print Network [OSTI]

    Borgens, Amy Anne

    2004-09-30T23:59:59.000Z

    at Goliad. The vessel wrecked at the entrance of the historic Pass Cavallo while evading capture from a Mexican brig-of-war in November of 1835....

  14. Low-Complexity Message-Passing Algorithms for Distributed Computation

    E-Print Network [OSTI]

    Noorshams, Nima

    2013-01-01T23:59:59.000Z

    4 Stochastic Orthogonal Series Message-Passing 4.14.2.2 Stochastic Message Updates . . . . . . .representation of Example 1 . Message flow between factor

  15. Issuance, Control and Use of Badges, Passes and Credentials

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    1988-02-03T23:59:59.000Z

    The order establishes and prescribes DOE policies and procedures for the issuance. control. and use of badges. passes, and credentials. Cancels DOE 5631.3.

  16. aplicados ao passe: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bretagne Computer Technologies and Information Sciences Websites Summary: 2zz 3z + 5 10 21 PASS Fdration de modles 12;Avancement 1 Problmes 2 Approche...

  17. Issuance, Control and Use of Badges, Passes, and Credentials

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    1988-12-19T23:59:59.000Z

    The change provides clarification of badges and passes used for escorted visitors into DOE facilities. Chg 1, dated 12-19-88

  18. Best Management Practice #9: Single-Pass Cooling Equipment |...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Find another use for the single-pass effluent in boiler make-up supply or landscape irrigation and implement. Some equipment effluent, such as degreasers and hydraulic...

  19. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer

  20. Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP/GaAs heterostructures

    E-Print Network [OSTI]

    Micromechanical resonators fabricated from lattice-matched and etch-selective GaAs/InGaP September 2007 Utilizing lattice-matched GaAs/InGaP/GaAs heterostructures, clean micromechanical resonators are fabricated and characterized. The nearly perfect selectivity of GaAs/InGaP is demonstrated by realizing

  1. Systemwide Risk Management and Public Safety 401 Golden Shore, 5th Floor

    E-Print Network [OSTI]

    de Lijser, Peter

    Systemwide Risk Management and Public Safety 401 Golden Shore, 5th Floor Long Beach, CA 90802 in this self-insured program. The Office of Risk Management in the Chancellor's Office administers the general liability, workers' compensation, property, and professional liability programs. The State Office of Risk

  2. Date: 31 March 2009 To: Lead Cluster Deans: Gilles Bousquet, Adam Gamoran, Robert Golden, Molly Jahn,

    E-Print Network [OSTI]

    Sheridan, Jennifer

    Date: 31 March 2009 To: Lead Cluster Deans: Gilles Bousquet, Adam Gamoran, Robert Golden, Molly that you launch internal program reviews of the individual cluster programs for which you serve as Lead Dean. In a separate attached document, you will find a list of clusters with their lead deans

  3. Fabrication of microfluidic hydrogels using molded gelatin as a sacrificial Andrew P. Golden and Joe Tien*

    E-Print Network [OSTI]

    . Golden and Joe Tien* Received 18th December 2006, Accepted 1st March 2007 First published as an Advance of a gel to sustain the metabolism of embedded cells.6,7 The large hydraulic resistance of bulk gels into microstructures with large aspect ratios, and tends to fracture upon manipulation. Our current work introduces

  4. The John M. Rezendes Ethics Essay Competition GOLDEN RICE: A GENETICALLY MODIFIED SOLUTION TO

    E-Print Network [OSTI]

    Thomas, Andrew

    The John M. Rezendes Ethics Essay Competition GOLDEN RICE: A GENETICALLY MODIFIED SOLUTION, such as beta-carotene (pro-vitamin A), which makes this predominant food source the main cause for vitamin Humanitarian Board, 2005-2011), a biofortified rice that was only possible through genetic engineering

  5. Habitat use of Golden-Cheeked Warblers in Travis County, Texas

    E-Print Network [OSTI]

    Beardmore, Carol Jeannette

    1994-01-01T23:59:59.000Z

    , and compared to vegetation in stands of warbler habitat. The breeding season was divided into two parts (March-April and May-June); the second part being characterized by the presence of young. Golden-cheeked Warblers switched from foraging in Plateau live oaks...

  6. Ga nanoparticle-enhanced photoluminescence of GaAs

    SciTech Connect (OSTI)

    Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States); Katzenstein, A. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Eckerd College, St. Petersburg, Florida 33711-4744 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-09-02T23:59:59.000Z

    We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

  7. The Single Pass Multi-component Harvester

    SciTech Connect (OSTI)

    Reed Hoskinson; John R. Hess

    2004-08-01T23:59:59.000Z

    The authors are solely responsible for the content of this technical presentation. The technical presentation does not necessarily reflect the official position of the American Society of Agricultural Engineers (ASAE), and its printing and distribution does not constitute an endorsement of views which may be expressed. Technical presentations are not subject to the formal peer review process by ASAE editorial committees; therefore, they are not to be presented as refereed publications. Citation of this work should state that it is from an ASAE meeting paper. EXAMPLE: Author's Last Name, Initials. 2004. Title of Presentation. ASAE Paper No. 04xxxx. St. Joseph, Mich.: ASAE. For information about securing permission to reprint or reproduce a technical presentation, please contact ASAE at hq@asae.org or 269-429-0300 (2950 Niles Road, St. Joseph, MI 49085-9659 USA). Abstract. In order to meet the U. S. government’s goal of supplementing the energy available from petroleum by increasing the production of energy from renewable resources, increased production of bioenergy has become one of the new goals of the United States government and our society. U.S. Executive Orders and new Federal Legislation have mandated changes in government procedures and caused reorganizations within the government to support these goals. The Biomass Research and Development Initiative is a multi-agency effort to coordinate and accelerate all U.S. Federal biobased products and bioenergy research and development. The Initiative is managed by the National Biomass Coordination Office, which is staffed by both the DOE and the USDA. One of the most readily available sources of biomass from which to produce bioenergy is an agricultural crop residue, of which straw from small grains is the most feasible residue with which to start. For the straw residue to be used its collection must be energy efficient and its removal must not impact the sustainability of the growing environment. In addition, its collection must be economically advantageous to the producer. To do all that, a single pass multi-component harvester system is most desirable. Results from our first prototype suggest that current combines probably do adequate threshing and that a separate chassis can be developed that does additional separation and that is economically feasible.

  8. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01T23:59:59.000Z

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  9. GaAs/InGaP/AlGaAs quantum-well infrared photodetectors

    SciTech Connect (OSTI)

    Keshagupta, P.; Radpour, F. [Univ. of Cincinnati, OH (United States)

    1994-12-31T23:59:59.000Z

    In this paper, a new quantum-well infrared photodetector (QWIP) based on bound-to-miniband transitions in a GaAs/InGaP quantum well with GaAs/AlGaAs short superlattice barriers is presented and compared with the conventional GaAs/InGaP QWIPs. Results of the theoretical calculations of the detector parameters and the preliminary fabrication results of an embedded-well to miniband (EWTMB) GaAs/InGaP/AlGaAs quantum well/superlattice detector are presented. The advantages of the proposed design include improvement of the material quality, ability to adjust the peak wavelength in 8--12 {micro}m range, and in the lower dark current.

  10. Influence of welding passes on grain orientation -the example of a multi-pass V-weld.

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Influence of welding passes on grain orientation - the example of a multi-pass V-weld. Jing YE;Abstract The accurate modelling of grain orientations in a weld is important, when accurate ultrasonic test predictions of a welded assembly are needed. To achieve this objective, Electricité de France (EDF

  11. Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well

    SciTech Connect (OSTI)

    Asami, T.; Nosho, H.; Tackeuchi, A. [Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555 (Japan); Li, L. H.; Harmand, J. C. [Laboratory for Photonics and Nanostructures-CNRS, Site Alcatel de Marcoussis, Route de Nozay, 91460 Marcoussis (France); Lu, S. L. [Suzhou Institute of Nano-tech and Nano-bionics, CAS, Dushu, Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou 215125 (China)

    2011-12-23T23:59:59.000Z

    We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn{sub 0.36}N{sub 0.006}AsSb{sub 0.015} well, 5-nm-thick GaN{sub 0.01}AsSb{sub 0.11} intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.

  12. EA-0995: Drum Storage Facility for Interim Storage of Materials Generated by Environmental Restoration Operations, Golden, Colorado

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts of the proposal to construct and operate a drum storage facility at the U.S. Department of Energy's Rocky Flats Environmental Technology Site in Golden,...

  13. Environmental Health and Safety COLORADO SCHOOL OF MINES Colorado School of Mines GOLDEN, COLORADO 80401-1887

    E-Print Network [OSTI]

    Environmental Health and Safety COLORADO SCHOOL OF MINES Colorado School of Mines GOLDEN, COLORADO Institute Site (CSMRI Site) on the south side of Clear Creek has been undergoing environmental time. Sincerely, L Linn D. Havelick Director, Environmental Health & Safety #12;

  14. Radiation induced by relativistic beams passing over a diffraction...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    August 2000 FEL 2000 1 Radiation Induced by Relativistic Beams Passing Over a Diffraction Grating J.H. Brownell, J. Walsh, J. Swartz, S. Trotz Dept. of Physics and Astronomy,...

  15. Defending your Doctoral Dissertation Passed at least 3 breadth examinations

    E-Print Network [OSTI]

    Doyle, Robert

    Defending your Doctoral Dissertation You: · Passed at least 3 breadth examinations · Completed 48*) · Have a GPA* of 3.0 · Successfully completed the Second-year oral examination. · Had your dissertation

  16. altamont pass wind: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    20 21 22 23 24 25 Next Page Last Page Topic Index 1 BIRD BEHAVIORS IN THE ALTAMONT PASS WIND RESOURCE AREA 8.1 INTRODUCTION Energy Storage, Conversion and Utilization Websites...

  17. Porn, Pedagogy, and the Passing of an Icon

    E-Print Network [OSTI]

    Ward, Anna E.

    2010-01-01T23:59:59.000Z

    by A n n a E . Wa r d Porn, Pedagogy, and the Passing of anoverlaps with the field of porn studies and as a teacher,common within the field of porn studies itself. This is

  18. Sabine Pass Liquefaction, LLC- Dkt. No 15-63-LNG

    Broader source: Energy.gov [DOE]

    The Office of Fossil Energy gives notice of receipt of an Application filed on April 20, 2015, by Sabine Pass Liquefaction, LLC (SPL), seeking long-term multi-contract authorization to export...

  19. Development of By-Pass Blending Station System

    E-Print Network [OSTI]

    Liu, M.; Barnes, D.; Bunz, K.; Rosenberry, N.

    2003-01-01T23:59:59.000Z

    A new building blending station system named by-pass blending station (BBS) has been developed to reduce building pump energy consumption in both district heating and cooling systems. Theoretical investigation demonstrated that the BBS can...

  20. Consider Installing Turbulators on Two- and Three-Pass Firetube...

    Broader source: Energy.gov (indexed) [DOE]

    tip sheet outlines the benefits of turbulators on firetube boilers as part of optimized steam systems. STEAM TIP SHEET 25 Consider Installing Turbulators on Two- and Three-Pass...

  1. Compositionally-graded InGaAsInGaP alloys and GaAsSb alloys for metamorphic InP on GaAs

    E-Print Network [OSTI]

    Compositionally-graded InGaAs­InGaP alloys and GaAsSb alloys for metamorphic InP on GaAs Li Yang a of tandem graded layers of InGaAs and InGaP with compositional grading of the In concentration. This tandem

  2. Bird Risk Behaviors and Fatalities at the Altamont Pass Wind Resource Area: Period of Performance, March 1998--December 2000

    SciTech Connect (OSTI)

    Thelander, C. G.; Smallwood, K. S.; Rugge, L.

    2003-12-01T23:59:59.000Z

    It has been documented that wind turbine operations at the Altamont Pass Wind Resource Area kill large numbers of birds of multiple species, including raptors. We initiated a study that integrates research on bird behaviors, raptor prey availability, turbine design, inter-turbine distribution, landscape attributes, and range management practices to explain the variation in avian mortality at two levels of analysis: the turbine and the string of turbines. We found that inter-specific differences in intensities of use of airspace within close proximity did not explain the variation in mortality among species. Unique suites of attributes relate to mortality of each species, so species-specific analyses are required to understand the factors that underlie turbine-caused fatalities. We found that golden eagles are killed by turbines located in the canyons and that rock piles produced during preparation of the wind tower laydown areas related positively to eagle mortality, perhaps due to the use of these rock piles as cover by desert cottontails. Other similar relationships between fatalities and environmental factors are identified and discussed. The tasks remaining to complete the project are summarized.

  3. An evaluation of the safety and utilization of short passing sections

    E-Print Network [OSTI]

    Jones, James Robert

    1970-01-01T23:59:59.000Z

    AND RECO~NDATIONS Summary of Findings Conclusions Recommendations 45 46 46 REFERENCES VITA 50 vi LI ST OF TAB LE S Table Page l. Observed Pass Occurrences, 400-Foot Passing Section (Site P-4) 21 2. Observed Pass Occurrences, 640-Foot Passing... Section (Site P-5) 22 3. Observed Pass Occurrences, 880-Foot Passing Section (Site P-6) 23 4. Pass Acceptance Rates 25 5. Traffic Utilization of Short Passing Sections 30 LIST OF FIGURES Figure 1. Plan and Profile Views, 400-Foot Passing Section 2...

  4. Bacon’s “Serious Satire” of the Church and the “Golden Mediocrity” of Induction 

    E-Print Network [OSTI]

    Kenneth Alan Hovey

    2003-01-01T23:59:59.000Z

    ESSAY 1 Bacon?s ?Serious Satire? of the Church and the ?Golden Mediocrity? of Induction Kenneth Alan Hovey University of Texas at San Antonio It is as a reformer of natural philosophy rather than of the church that Francis Bacon is best known... Science: The Merton Thesis (Brunswick, NJ: Rutgers Uni- versity Press, 1990). 2. Julian Martin, Francis Bacon, the State, and the Reform of Natural Philosophy (Cambridge: Cambridge University Press, 1992), 24, 29-33; and Brian Vickers, Francis Bacon...

  5. Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors

    E-Print Network [OSTI]

    Pala, Nezih

    Torr and consisted of a 1.4 lm undoped GaN buffer layer on i-SiC substrate, * Corresponding authorLow frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors N. Pala a November 2002 Abstract Low-frequency noise in AlGaN/InGaN/GaN double heterostructure field effect

  6. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    E-Print Network [OSTI]

    Sriram Krishnamoorthy; Digbijoy N. Nath; Fatih Akyol; Pil Sung Park; Michele Esposto; Siddharth Rajan

    2010-08-24T23:59:59.000Z

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin (WKB) calculations were used to model and design tunnel junctions with narrow bandgap InGaN-based barrier layers. N-polar p-GaN/In0.33Ga0.67N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient zero bias tunneling turn-on with a high current density of 118 A/cm2 at a reverse bias of 1V, reaching a maximum current density up to 9.2 kA/cm2 were obtained. These results represent the highest current density reported in III-nitride tunnel junctions, and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  7. Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption In this paper, we present four GaN based polar quantum structures grown on c-plane embedded in p-i-n diode GaN/AlGaN quantum structures for operation in the deep-UV spectral region and the other three

  8. Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1

    E-Print Network [OSTI]

    Nabben, Reinhard

    Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. Dworzak1 , T. Stempel1/37, 01-142 Warsaw, Poland ABSTRACT Time-integrated and time-resolved photoluminescence measurements on InGaN quantum wells grown by MOCVD on two different substrates (sapphire and GaN) show that the lumines- cence

  9. Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers

    SciTech Connect (OSTI)

    Yang, Yujue; Wang, Junxi; Li, Jinmin; Zeng, Yiping, E-mail: ypzeng@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-06-21T23:59:59.000Z

    The effects of InGaN-based light-emitting diodes (LEDs) with Al composition increasing and decreasing GaN-AlGaN barriers along the growth direction are studied numerically. Simulation results suggest that the LEDs with GaN-AlGaN composition-decreased barriers show more significant enhancement of light-output power and internal quantum efficiency than LEDs with composition-increasing GaN-AlGaN barriers when compared with the conventional LED with GaN barriers, due to the improvement in hole injection efficiency and electron blocking capability. Moreover, the optical performance is further improved by replacing GaN-AlGaN barriers with AlGaN-GaN barriers of the same Al composition-decreasing range, which are mainly attributed to the modified band diagrams. In addition, the major causes of the different efficiency droop behaviors for all the designed structures are explained by the electron leakage current and the different increase rates of hole concentration with injection current.

  10. Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers

    E-Print Network [OSTI]

    Keogh, David Martin

    2006-01-01T23:59:59.000Z

    T. Henderson, “High- Speed InGaP/GaAs HBT’s Using a SimpleA typical AlGaAs/GaAs HBT or InGaP/GaAs HBT has the opposite

  11. Message passing in fault tolerant quantum error correction

    E-Print Network [OSTI]

    Z. W. E. Evans; A. M. Stephens

    2008-06-13T23:59:59.000Z

    Inspired by Knill's scheme for message passing error detection, here we develop a scheme for message passing error correction for the nine-qubit Bacon-Shor code. We show that for two levels of concatenated error correction, where classical information obtained at the first level is used to help interpret the syndrome at the second level, our scheme will correct all cases with four physical errors. This results in a reduction of the logical failure rate relative to conventional error correction by a factor proportional to the reciprocal of the physical error rate.

  12. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-07-07T23:59:59.000Z

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  13. Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta

    E-Print Network [OSTI]

    Svane, Axel Torstein

    69,71 Ga NMR spectra and relaxation in wurtzite GaN M. Corti and A. Gabetta Department of Physics properties of wurtzite GaN are studied by Ga nuclear magnetic resonance NMR in a GaN bulk crystal containing GaN is a wide band-gap semiconductor which crystallizes in the hexagonal wurtzite structure

  14. Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Cross-sectional Scanning Tunneling Microscopy and Spectroscopy of InGaP/GaAs Heterojunctions Y Abstract Compositionally abrupt InGaP/GaAs heterojunctions grown by gas-source molecular beam epitaxy have the InGaP layer show non-uniform In and Ga distribution. About 1.5 nm of transition region

  15. Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    Role of Electrochemical Reactions in the Degradation Mechanisms of AlGaN/GaN HEMTs Feng Gao1, USA tpalacios@mit.edu; (617) 324-2395 Keywords: AlGaN/GaN HEMTs, reliability, moisture, electro-chemical reactions Abstract The nature of structural degradation in AlGaN/GaN high electron mobility transistors

  16. Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High

    E-Print Network [OSTI]

    Li, Yat

    Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors, 2006 ABSTRACT We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire-organic chemical vapor deposition (MOCVD). Transmission electron microscopy (TEM) studies reveal that the GaN/ AlN/AlGaN

  17. Metro/Transit Pass Reimbursement Form Program Regulations

    E-Print Network [OSTI]

    de Lijser, Peter

    participate at least 70% of your scheduled workdays to meet program eligibility Eligible non-permit holders receive 100% reimbursement of the monthly Metro monthly pass cost (max $75) Eligible permit holders, WORK LOCATION, WORK HRS, PERMIT PURCHASE/TURNED IN) DAYS COMMUTED BY BUS REIMBURSEMENT REQUESTED (non-permit

  18. Synchronous Message Passing V. V. Murty and V. K. Garg

    E-Print Network [OSTI]

    Garg, Vijay

    Synchronous Message Passing V. V. Murty and V. K. Garg TR ECE-PDS-93-01 October 1993 Parallel, Texas 78712 THEUNI VERSITY O FTEXAS AT AUSTIN D ISCIPLINA PRAESIDIUM CIVITATIS #12;Synchronous Message of synchronous ordering of messages. Synchronous ordering of messages de nes synchronous communication based

  19. Appendix A. Message-passing algorithms A.1 Paradigms

    E-Print Network [OSTI]

    Goddard III, William A.

    A - 1 Appendix A. Message-passing algorithms A.1 Paradigms There are many different message types collects done messages from all nodes, then broadcasts "go-on" message to all of them. Note: in this way_center_for_all cells; Checkwindow cald, which : Combine_calc_center for own Send message CALC type for others. At end

  20. Message-Passing Algorithms for Large Structured Decentralized POMDPs

    E-Print Network [OSTI]

    Zilberstein, Shlomo

    Message-Passing Algorithms for Large Structured Decentralized POMDPs (Extended Abstract) Akshat first transform the policy opti- mization problem to that of likelihood maximization in a mixture uncertainty [2]. Their expressive power allows them to capture situations when agents must act based

  1. ScreenPass: Secure Password Entry on Touchscreen Dongtao Liu

    E-Print Network [OSTI]

    Cox, Landon

    ScreenPass: Secure Password Entry on Touchscreen Devices Dongtao Liu Duke University Durham, NC, USA Eduardo Cuervo Duke University Durham, NC, USA Valentin Pistol Duke University Durham, NC, USA Ryan Scudellari Duke University Durham, NC, USA Landon P. Cox Duke University Durham, NC, USA ABSTRACT

  2. Buffer Minimization in Pass Transistor Logic Advanced Technology Group

    E-Print Network [OSTI]

    Zhou, Hai

    function cells and four inverters with various drive capabilities. The approach in [2] also utilizesBuffer Minimization in Pass Transistor Logic Hai Zhou Advanced Technology Group Synopsys, Inc are inverters, where phase assignment need to be done with buffer insertion. Exper­ iments are done on MCNC

  3. Beta decay of Ga-62 

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    We report a study of the beta decay of Ga-62, whose dominant branch is a superallowed 0(+)-->0(+) transition to the ground state of Zn-62. We find the total half-life to be 115.84+/-0.25 ms. This is the first time that the Ga-62 half-life has been...

  4. Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

    SciTech Connect (OSTI)

    Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

    2013-08-19T23:59:59.000Z

    We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

  5. CPV Cell Characterization Following One-Year Exposure in Golden, Colorado: Preprint

    SciTech Connect (OSTI)

    Bosco, N.; Kurtz, S.

    2014-08-01T23:59:59.000Z

    A CPV module containing 30 III-V multijunction cells was operated on?sun for one year in Golden, Colorado. Each cell was characterized prior to and following exposure. A module power degradation of 10% was observed and found to be a result as an overall decrease in cell short circuit current and the presence of at least one shunted cell. A positive correlation between initial shunt current and an increase in shunt current following exposure was also found. Cell exfoliation was also observed and found to be coincident with the presence of water and/or charring of the cell package due to an off-sun event.

  6. Alternative Fuels Data Center: Golden Eagle Delivers Beer With Natural Gas

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office511041cloth DocumentationProductsAlternative Fuels Clean CitiesStationTrucks Golden Eagle Delivers

  7. This report summarizes and compares the functionality of several portable message passing libraries. A message passing library contains explicit communication primitives

    E-Print Network [OSTI]

    Yelick, Katherine

    communication interface on different types of machines. We survey ten message passing libraries, most of which libraries. A message passing library contains explicit communication primitives for the exchange of messages among computing processes. A portable message passing library further attempts to provide a uniform

  8. 25.06.2007 hpc@rrze.uni-erlangen.de 1PTfS 2007 Introduction to Message Passing andIntroduction to Message Passing and

    E-Print Network [OSTI]

    Fiebig, Peter

    25.06.2007 hpc@rrze.uni-erlangen.de 1PTfS 2007 Introduction to Message Passing andIntroduction to Message Passing and Parallel Programming With MPIParallel Programming With MPI Dr. Georg Hager, Dr to the message passing paradigm Using MPI: Initializing and killing the parallel machine Most basic message

  9. 03.07.06 hpc@rrze.uni-erlangen.de 1PTfS 2006 Introduction to Message Passing andIntroduction to Message Passing and

    E-Print Network [OSTI]

    Stummer, Wolfgang

    1 03.07.06 hpc@rrze.uni-erlangen.de 1PTfS 2006 Introduction to Message Passing andIntroduction to Message Passing and Parallel Programming With MPIParallel Programming With MPI Dr. Georg Hager, Dr@rrze.uni-erlangen.de 2PTfS 2006 Introduction to MPI: Agenda The basics: Introduction to the message passing paradigm

  10. 20.06.05 georg.hager@rrze.uni-erlangen.de 1PTfS 2005 Introduction to Message Passing andIntroduction to Message Passing and

    E-Print Network [OSTI]

    Fiebig, Peter

    1 20.06.05 georg.hager@rrze.uni-erlangen.de 1PTfS 2005 Introduction to Message Passing andIntroduction to Message Passing and Parallel Programming With MPIParallel Programming With MPI Georg Hager, Dr. Gerhard.hager@rrze.uni-erlangen.de 2PTfS 2005 Introduction to MPI: Agenda The basics: Introduction to the message passing paradigm

  11. Thermal efficiency of single-pass solar air collector

    SciTech Connect (OSTI)

    Ibrahim, Zamry; Ibarahim, Zahari; Yatim, Baharudin [School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor Darul Ehsan (Malaysia); Ruslan, Mohd Hafidz [Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor Darul Ehsan (Malaysia)

    2013-11-27T23:59:59.000Z

    Efficiency of a finned single-pass solar air collector was studied. This paper presents the experimental study to investigate the effect of solar radiation and mass flow rate on efficiency. The fins attached at the back of absorbing plate to improve the thermal efficiency of the system. The results show that the efficiency is increased proportional to solar radiation and mass flow rate. Efficiency of the collector archived steady state when reach to certain value or can be said the maximum performance.

  12. Incentive Pass-through for Residential Solar Systems in California

    Broader source: Energy.gov [DOE]

    The deployment of solar photovoltaic (PV) systems has grown rapidly over the last decade, partly because of various government incentives. In the United States, those established in California are among the largest and longest-running incentives. Building on past research, this report addresses the still-unanswered question: to what degree have the direct PV incentives in California been passed along from installers to consumers? This report addresses this question by carefully examining the residential PV market in California and applying both a structural-modeling approach and a reduced-form regression analysis to estimate the incentive pass-through rate. The results suggest an average pass-through rate of direct incentives of nearly 100%, but with regional differences among California counties. While these results could have multiple explanations, they suggest a relatively competitive market and well-functioning subsidy program. Further analysis is required to determine whether similar results broadly apply to other states, to other customer segments, to all third-party-owned PV systems, or to all forms of financial incentives for solar.

  13. One pass core design of a super fast reactor

    SciTech Connect (OSTI)

    Liu, Qingjie; Oka, Yoshiaki [Cooperative Major in Nuclear Energy, Waseda University, Tokyo 169-8555 (Japan)

    2013-07-01T23:59:59.000Z

    One pass core design for Supercritical-pressure light water-cooled fast reactor (Super FR) is proposed. The whole core is cooled with upward flow in one through flow pattern like PWR. Compared with the previous two pass core design; this new flow pattern can significantly simplify the core concept. Upper core structure, coolant flow scheme as well as refueling procedure are as simple as in PWR. In one pass core design, supercritical-pressure water is at approximately 25.0 MPa and enters the core at 280 C. degrees and is heated up in one through flow pattern upwardly to the average outlet temperature of 500 C. degrees. Great density change in vertical direction can cause significant axial power offset during the cycle. Meanwhile, Pu accumulated in the UO{sub 2} fuel blanket assemblies also introduces great power increase during cycle, which requires large amount of flow for heat removal and makes the outlet temperature of blanket low at the beginning of equilibrium cycle (BOEC). To deal with these issues, some MOX fuel is applied in the bottom region of the blanket assembly. This can help to mitigate the power change in blanket due to Pu accumulation and to increase the outlet temperature of the blanket during cycle. Neutron transport and thermohydraulics coupled calculation shows that this design can satisfy the requirement in the Super FR principle for both 500 C. degrees outlet temperature and negative coolant void reactivity. (authors)

  14. Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system

    E-Print Network [OSTI]

    Coldren, Larry A.

    Multiple-band-edge quantum-well intermixing in the InGaAs/InGaAsP/InGaP material system Erik J InGaAs/InGaAsP/InGaP material system. © 2005 American Institute of Physics. DOI: 10 of achieving QWI in such active regions.3,4 However, InGaAs/InGaAsP/InGaP-based de- vices offer numerous

  15. Golden Hills

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power AdministrationField8,Dist.NewofGeothermal Heat PumpJorge Gardea-Torresdey,

  16. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23T23:59:59.000Z

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  17. The Tang Prize A golden age of cosmopolitan culture, the high point of China's political power: the Tang Dynasty

    E-Print Network [OSTI]

    1 The Tang Prize A golden age of cosmopolitan culture, the high point of China's political power Development recognizes science and technology innovation relating to engineering, energy, environment works) recognizes the study of Sinology in a broad sense including research on China or related fields

  18. The Ising model and critical behavior of transport in binary composite N. B. Murphy and K. M. Golden

    E-Print Network [OSTI]

    Golden, Kenneth M.

    nanotube composites,37 and sea ice.26,27 A key feature of these materials is the critical dependenceThe Ising model and critical behavior of transport in binary composite media N. B. Murphy and K. M) The Ising model and critical behavior of transport in binary composite media N. B. Murphy and K. M. Golden

  19. Spirituality in the salesperson: the impact of the golden rule and personal faith on workplace job attitudes

    E-Print Network [OSTI]

    Smith, James Garry

    2007-09-17T23:59:59.000Z

    of following the Golden Rule or a person�s faith or spirituality with key business outcomes. Salespeople impact the performance and perception of their firms, yet are regarded as highly unethical by the public. Therefore, an investigation of how...

  20. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01T23:59:59.000Z

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  1. AlGaAs/InGaAs/AlGaAs Double Barrier

    E-Print Network [OSTI]

    Perera, A. G. Unil

    -state Er. Tunneling Quantum Dot Sensors for Multi-band Infrared and Terahertz Radiation Detection G radiation detection are demonstrated. In T-QDIP structures, photoabsorption takes place in InGaAs QDs (due

  2. Spontaneous light emission by atomic Hydrogen: Fermi's golden rule without cheating

    E-Print Network [OSTI]

    V. Debierre; T. Durt; A. Nicolet; F. Zolla

    2015-02-23T23:59:59.000Z

    Focusing on the $2\\mathrm{p}-1\\mathrm{s}$ transition in atomic Hydrogen, we investigate through first order perturbation theory the time evolution of the survival probability of an electron initially taken to be in the excited ($2\\mathrm{p}$) state. We examine both the results yielded by the standard dipole approximation for the coupling between the atom and the electromagnetic field -for which we propose a cutoff-independent regularisation- and those yielded by the exact coupling function. In both cases, Fermi's golden rule is shown to be an excellent approximation for the system at hand: we found its maximal deviation from the exact behaviour of the system to be of order $10^{-8}/10^{-7}{}$. Our treatment also yields a rigorous prescription for the choice of the optimal cutoff frequency in the dipole approximation. With our cutoff, the predictions of the dipole approximation are almost indistinguishable at all times from the exact dynamics of the system.

  3. EIS-0510: Calcasieu Pass Project, Cameron Parish, Louisiana

    Broader source: Energy.gov [DOE]

    The Federal Energy Regulatory Commission (FERC) is preparing an EIS that analyzes the potential environmental impacts of the Calcasieu Pass Project, a proposed liquefied natural gas (LNG) export terminal in Cameron Parish, Louisiana. DOE is a cooperating agency in preparing the EIS. DOE, Office of Fossil Energy, has an obligation under Section 3 of the Natural Gas Act to authorize the import and export of natural gas, including LNG, unless it finds that the import or export is not consistent with the public interest.

  4. EA-1983: Sabine Pass Liquefaction Expansion Project, Cameron Parish, Louisiana

    Broader source: Energy.gov [DOE]

    The Federal Energy Regulatory Commission (FERC) is preparing an EA for a proposal to expand the existing Sabine Pass Liquefied Natural Gas Terminal in Cameron Parish, and to extend an associated existing pipeline system in Cameron, Calcasieu, Beauregard, Allen, and Evangeline Parishes in Louisiana. DOE is a cooperating agency in preparing the EA. DOE, Office of Fossil Energy, has an obligation under Section 3 of the Natural Gas Act to authorize the import and export of natural gas, including LNG, unless it finds that the import or export is not consistent with the public interest.

  5. Passed on traditions: Reclaiming ethnic heritage through magical realism

    E-Print Network [OSTI]

    Rouse, Linda Anne

    1995-01-01T23:59:59.000Z

    . was isolated from the community simply by his association with her; it did not matter that he knew nothing of the child's murder. In order for the community to accept Paul D. , Stamp Paid, the former Underground Railroad conductor, must convince one... baby. Morrison provides a list of the strange behavior in and around 124 Bluestone. Locals ride at a gallop when they pass the house; Paul D. , a newcomer to the house and to town, feels the presence of the baby as soon as he sets foot in the house...

  6. ComPASS Present and Future Computing Requirements

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office511041clothAdvanced Materials Advanced. C o w l i tCollaboration MarchCanadian and UnitedComPASS Present

  7. Passing the baton | Y-12 National Security Complex

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible for RenewableSpeedingBiomassPPPO WebsitePalms Village ResortEnergyL L 2 0 1 4Passing

  8. Moose Pass, Alaska: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer Plant JumpMarysville,Missoula,Monterey County,Monticello,Oklahoma: Energy ResourcesPass,

  9. Composition and Interface Analysis of InGaN/GaN Multiquantum...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells...

  10. The Language Trap: U.S. Passing Fiction and its Paradox

    E-Print Network [OSTI]

    Sugimori, Masami

    2009-12-04T23:59:59.000Z

    Through exploration of William Faulkner's, James Weldon Johnson's and Nella Larsen's "passing novels," this dissertation points out that narrative representation of racial passing facilitates and compromises the authors' challenge to the white...

  11. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin [Centre for Research in Photonics, University of Ottawa, Ottawa, ON (Canada); Masson, Denis; Riel, Bruno; Fafard, Simon [Cyrium Technologies Inc., Ottawa, ON (Canada); Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent [Centre de Recherche en Nanofabrication et en Nanocaracterisation CRN2, Universite de Sherbrooke, Sherbrooke, QC (Canada)

    2010-10-14T23:59:59.000Z

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  12. PRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS

    E-Print Network [OSTI]

    McCluskey, Matthew

    -µm thick GaN layer deposited on a sapphire substrate, and it is capped by a 0.2-µm GaN:Mg pPRESSURE DEPENDENCE OF OPTICAL TRANSITIONS IN InGaN/GaN MULTIPLE QUANTUM WELLS W. Shan,* J.W. Ager pressure on optical transitions in InGaN/GaN multiple quantum wells (MQWs) has been studied

  13. Free carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1

    E-Print Network [OSTI]

    As, Donat Josef

    ) substrate,7 with GaN and AlGaN layer thickness of 600 nm and 30 nm, respectively. The layer thicknessFree carrier accumulation at cubic AlGaN/GaN heterojunctions Q. Y. Wei,1 T. Li,1 J. Y. Huang,1 F. A (Received 24 February 2012; accepted 19 March 2012; published online 3 April 2012) Cubic Al0.3Ga0.7N/GaN

  14. InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy with a valved phosphorus cracker

    E-Print Network [OSTI]

    Woodall, Jerry M.

    InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular; accepted 17 November 1995 The growth and device characterization of an InGaP/GaAs double-quality phosphorus-containing compounds.1­4 The growth of high-performance InGaP/ GaAs and InGaAs/InP single

  15. Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy

    SciTech Connect (OSTI)

    Chen, Yen-Ting [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China) [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China); Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden); Araki, Tsutomu [Department of Electrical and Electronic Engineering, Ritsumeikan University, 525-8577 Shiga (Japan)] [Department of Electrical and Electronic Engineering, Ritsumeikan University, 525-8577 Shiga (Japan); Palisaitis, Justinas; Persson, Per O. Å.; Olof Holtz, Per; Birch, Jens [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden)] [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden); Chen, Li-Chyong [Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan (China)] [Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan (China); Chen, Kuei-Hsien [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China) [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China); Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan (China); Nanishi, Yasushi [Global Innovation Research Organization, Ritsumeikan University, 525-8577 Shiga (Japan)] [Global Innovation Research Organization, Ritsumeikan University, 525-8577 Shiga (Japan)

    2013-11-11T23:59:59.000Z

    Nucleation mechanism of catalyst-free GaN nanorod grown on Si(111) is investigated by the fabrication of uniform and narrow (<35 nm) nanorods without a pre-defined mask by molecular beam epitaxy. Direct evidences show that the nucleation of GaN nanorods stems from the sidewall of the underlying islands down to the Si(111) substrate, different from commonly reported ones on top of the island directly. Accordingly, the growth and density control of the nanorods is exploited by a “narrow-pass” approach that only narrow nanorod can be grown. The optimal size of surrounding non-nucleation area around single nanorod is estimated as 88 nm.

  16. Message-passing for Inference and Optimization of Real Variables on Sparse Graphs

    E-Print Network [OSTI]

    Wong, Michael K Y

    Message-passing for Inference and Optimization of Real Variables on Sparse Graphs K. Y. Michael with extensive inter-dependencies among the variables, the graph-based models can be solved by passing messages between neighbouring variables on the graphs. This message-passing approach has gained recent success

  17. Fully Simplified Multivariate Normal Updates in Non-Conjugate Variational Message Passing

    E-Print Network [OSTI]

    Wand, Matt

    Fully Simplified Multivariate Normal Updates in Non-Conjugate Variational Message Passing BY M updates in non-conjugate vari- ational message passing approximate inference schemes are obtained factors in variational message passing approximate inference schemes. Dubbed non-conjugate variational

  18. Expectation Maximization as Message Passing Justin Dauwels, Sascha Korl, and Hans-Andrea Loeliger

    E-Print Network [OSTI]

    Loeliger, Hans-Andrea

    ISIT 2005 Expectation Maximization as Message Passing Justin Dauwels, Sascha Korl, and Hans, and used, as a message passing algorithm in factor graphs. I. INTRODUCTION Graphical models [1 algorithms, and particle filters can be naturally viewed and used as message passing in factor graphs [3], [4

  19. Formal Analysis of Message Passing Stephen F. Siegel and Ganesh Gopalakrishnan

    E-Print Network [OSTI]

    Capecchi, Mario R.

    Formal Analysis of Message Passing Stephen F. Siegel and Ganesh Gopalakrishnan 1 Verified Software 84112, USA ganesh@cs.utah.edu http://www.cs.utah.edu/fv Abstract. The message passing paradigm underlies are involved in developing formal analysis tools and techniques for message passing programs. This paper

  20. Signals Passed at Danger: A Case Study in the Application of Visualisation Techniques

    E-Print Network [OSTI]

    Johnson, Chris

    Signals Passed at Danger: A Case Study in the Application of Visualisation Techniques Fraser Speirs over 800,000 records. This paper presents the reporting of Signals Passed at Danger (SPAD) - the term used to describe an incident when a train passes a signal displaying a danger aspect without

  1. InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P. C. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Baca, A. G. [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)] [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Li, N. Y. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Xie, X. M. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Hou, H. Q. [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)] [Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States); Armour, E. [Emcore Corporation, Somerset, New Jersey 08873 (United States)] [Emcore Corporation, Somerset, New Jersey 08873 (United States)

    2000-04-17T23:59:59.000Z

    We have demonstrated a functional NpN double-heterojunction bipolar transistor (DHBT) using InGaAsN for the base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs heterojunction bipolar transistor (HBT). The lower turn-on voltage is attributed to the smaller band gap (1.20 eV) of metalorganic chemical vapor deposition-grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the breakdown voltage (BV{sub CEO}) is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs HBTs of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger conduction band discontinuity between InGaAsN and GaAs, a graded InGaAs layer with {delta} doping is inserted at the base-collector junction. The improved device has a peak current gain of seven with ideal current-voltage characteristics. (c) 2000 American Institute of Physics.

  2. InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P.C.; Baca, A.G.; Li, N.Y.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-10T23:59:59.000Z

    The authors have demonstrated a functional NpN double heterojunction bipolar transistor (DHBT) using InGaAsN for base layer. The InGaP/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs DHBT has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in a InGaP/GaAs HBT. The lower V{sub ON} is attributed to the smaller bandgap (E{sub g}=1.20eV) of MOCVD grown In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} base layer. GaAs is used for the collector; thus the BV{sub CEO} is 10 V, consistent with the BV{sub CEO} of InGaP/GaAs Hbts of comparable collector thickness and doping level. To alleviate the current blocking phenomenon caused by the larger {triangle}E{sub C} between InGaAsN and GaAs, a graded InGaAs layer with {delta}-doping is inserted at the base-collector junction. The improved device has a peak current gain of 7 with ideal IV characteristics.

  3. Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction

    E-Print Network [OSTI]

    Sirenko, Andrei

    Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied for x-ray diffraction and reciprocal space mapping of InGaN/GaN multiple-quantum-well MQW structures grown on the sidewalls of 10- m-wide triangular GaN ridges with 1-1.1 facets. Samples were produced

  4. GaN0.011P0.989–GaP Double-Heterostructure Red Light-Emitting Diodes Directly Grown on GaP Substrates

    E-Print Network [OSTI]

    Tu, Charles W

    2000-01-01T23:59:59.000Z

    and C. W. Tu, GaN diodes on GaP substrates, 2000. [7] J. W.on a GaN directly grown on a GaP substrate was successfullyDH) directly a GaN grown on a (100) GaP substrate. Fig. 1(a)

  5. Proceedings of the 2002 U.S. DOE Hydrogen and Fuel Cells Annual Program/Lab R&D Review, May 6-10, 2002, Golden, Colorado.

    Broader source: Energy.gov [DOE]

    Proceedings of the US DOE Hydrogen Program, the Fuel Cells for Transportation Program, and the Fuels for Fuel Cells Program inaugural combined Annual Program/Lab R&D Review held May 6-10, 2002 in Golden, Colorado.

  6. AlGaAs/InGaAsN/GaAs PnP double heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Chang, P.C.; Baca, A.G.; Li, N.Y.; Sharps, P.R.; Hou, H.Q.; Laroche, J.R.; Ren, F.

    2000-01-11T23:59:59.000Z

    The authors have demonstrated a functional MOCVD-grown AlGaAs/InGaAsN/GaAsPnP DHBT that is lattice matched to GaAs and has a peak current gain ({beta}) of 25. Because of the smaller bandgap (E{sub g}=1.20eV)of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{sub ON} of 0.79 V, 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. The BV{sub CEO} is 12 V, consistent with its GaAs collector thickness and doping level.

  7. Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Mazumder, B.; Hurni, C. A.; Zhang, J. Y.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, M. H.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2012-08-27T23:59:59.000Z

    In this letter, we report on the interfacial abruptness of GaN/AlN/GaN heterostructures with pulsed laser atom probe tomography (APT). The samples were grown by plasma-assisted molecular beam epitaxy (MBE) under both metal-rich and N-rich conditions on both Ga-polar (0001) GaN templates and N-polar (0001) GaN substrates. An NH{sub 3} assisted MBE technique was involved to grow similar Ga-polar and N-polar structures on GaN:Fe substrates and GaN/Al{sub 2}O{sub 3} templates, respectively, for a comparison study. We find in all cases the interface with net positive polarization charge was chemically abrupt, whereas the interface with net negative polarization charge was diffuse. We discuss the implications on device design and performance. These data validate the efficiency of APT in studying interfaces for better performance in devices.

  8. Superior radiation-resistant properties of InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Yamaguchi, M.; Okuda, T.; Taylor, S.J.; Takamoto, T. [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan)] [Toyota Technological Institute 2-12-1 Hisakata, Tempaku, Nagoya 468 (Japan); Ikeda, E.; Kurita, H. [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Resource Laboratory, Japan Energy Company, Niizo-Minami, Toda, Saitama 335 (Japan)

    1997-03-01T23:59:59.000Z

    The observation of minority-carrier injection-enhanced annealing of radiation damage to InGa{sub 0.5}P{sub 0.5}/GaAs tandem solar cells is reported. Radiation resistance of InGaP/GaAs tandem solar cells as is similar with GaAs-on-Ge cells have been confirmed with 1 MeV electron irradiations. Moreover, minority-carrier injection under light illumination and forward bias conditions is shown to enhance defect annealing in InGaP and to result in the recovery of InGaP/GaAs tandem solar cell properties. These results suggest that the InGaP/GaAs(/Ge) multijunction solar cells and InGaP-based devices have great potential for space applications. {copyright} {ital 1997 American Institute of Physics.}

  9. The effect of inter-pass temperature on residual stresses in multi-pass welds produced using a low transformation temperature filler alloy

    E-Print Network [OSTI]

    Cambridge, University of

    The effect of inter-pass temperature on residual stresses in multi-pass welds produced using a low-to-martensite transformation temperatures offer an effective method of reducing residual stresses in strong, steel welds with a martensitic weld filler alloy that transforms at a low temperature, have been studied as a function

  10. Approximate Message Passing with Restricted Boltzmann Machine Priors

    E-Print Network [OSTI]

    Tramel, Eric W; Krzakala, Florent

    2015-01-01T23:59:59.000Z

    Approximate Message Passing (AMP) has been shown to be an excellent statistical approach to signal inference and compressed sensing problem. The AMP framework provides modularity in the choice of signal prior; here we propose a hierarchical form of the Gauss-Bernouilli prior which utilizes a Restricted Boltzmann Machine (RBM) trained on the signal support to push reconstruction performance beyond that of simple iid priors for signals whose support can be well represented by a trained binary RBM. We present and analyze two methods of RBM factorization and demonstrate how these affect signal reconstruction performance within our proposed algorithm. Finally, using the MNIST handwritten digit dataset, we show experimentally that using an RBM allows AMP to approach oracle-support performance.

  11. Effects of passing energetic particles on geodesic acoustic mode

    SciTech Connect (OSTI)

    Ren, Haijun, E-mail: hjren@ustc.edu.cn; Dong, Chao [Department of Modern Physics, The Collaborative Innovation Center for Advanced Fusion Energy and Plasma Science, University of Science and Technology of China, Hefei 230026 (China)

    2014-10-15T23:59:59.000Z

    Effects of passing energetic particles on geodesic acoustic modes (GAMs) are investigated using the hybrid kinetic-fluid model. The local dispersion relation of GAM is derived by adopting the equilibrium distribution function for slowing-down energetic ions with a single pitch angle. The dependence of the distribution function on the poloidal angle is first taken into account and shows to play a crucial role in determining the instability criterion as well as the frequency of GAM, although the poloidal asymmetry is of order O(?). A high frequency branch of GAM resonantly excited is always stable, and a low frequency branch could be unstable. The case of zero pitch angle is specifically discussed. This case is always responsible for stable modes when disregarding the poloidal asymmetry, but can be unstable when the poloidal asymmetry is considered.

  12. Boundary filters for vector particles passing parity breaking domains

    SciTech Connect (OSTI)

    Kolevatov, S. S.; Andrianov, A. A. [Saint Petersburg State University, 1 ul. Ulyanovskaya, St. Petersburg, 198504 (Russian Federation)

    2014-07-23T23:59:59.000Z

    The electrodynamics supplemented with a Lorenz and CPT invariance violating Chern-Simons (CS) action (Carrol-Field-Jackiw electrodynamics) is studied when the parity-odd medium is bounded by a hyperplane separating it from the vacuum. The solutions in both half-spaces are carefully discussed and for space-like boundary stitched on the boundary with help of the Bogolubov transformations. The presence of two different Fock vacua is shown. The passage of photons and massive vector mesons through a boundary between the CS medium and the vacuum of conventional Maxwell electrodynamics is investigated. Effects of reflection from a boundary (up to the total one) are revealed when vector particles escape to vacuum and income from vacuum passing the boundary.

  13. Supporting the Development of Resilient Message Passing Applications using Simulation

    SciTech Connect (OSTI)

    Naughton, III, Thomas J [ORNL; Engelmann, Christian [ORNL] [ORNL; Vallee, Geoffroy R [ORNL] [ORNL; Boehm, Swen [ORNL] [ORNL

    2014-01-01T23:59:59.000Z

    An emerging aspect of high-performance computing (HPC) hardware/software co-design is investigating performance under failure. The work in this paper extends the Extreme-scale Simulator (xSim), which was designed for evaluating the performance of message passing interface (MPI) applications on future HPC architectures, with fault-tolerant MPI extensions proposed by the MPI Fault Tolerance Working Group. xSim permits running MPI applications with millions of concurrent MPI ranks, while observing application performance in a simulated extreme-scale system using a lightweight parallel discrete event simulation. The newly added features offer user-level failure mitigation (ULFM) extensions at the simulated MPI layer to support algorithm-based fault tolerance (ABFT). The presented solution permits investigating performance under failure and failure handling of ABFT solutions. The newly enhanced xSim is the very first performance tool that supports ULFM and ABFT.

  14. Beta decay of Ga-62

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    from the ex- perimental ft value for a 01?01 b decay between analog states with the relation @3# 0556-2813/2003/68~1!/015501~6!/$20.00 68 015501- of 62Ga . Hardy, V. E. Mayes, R. G. Neilson, M. Sanchez-Vega, and R. E. Tribble y, College Station...

  15. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    Logo GaN nanowires show more 3D piezoelectricity than bulk GaN admin / January 11, 2012 individual gallium nitride (GaN) nanowires showing strong piezoelectric effect in 3D. This is in spite of the fact that each nanowire only measures 100nm in diameter. While GaN is ubiquitous in optoelectronic

  16. Self-aligned AlGaN/GaN transistors for sub-mm wave applications

    E-Print Network [OSTI]

    Saadat, Omair I

    2010-01-01T23:59:59.000Z

    This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...

  17. Invited Paper GaN HEMT reliability

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    Invited Paper GaN HEMT reliability J.A. del Alamo *, J. Joh Microsystems Technology Laboratories mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress. Under high voltage, it has been found that electrically active defects are generated in the AlGaN barrier

  18. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01T23:59:59.000Z

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  19. InAs=InGaP=GaAs heterojunction power Schottky rectifiers

    E-Print Network [OSTI]

    Woodall, Jerry M.

    InAs=InGaP=GaAs heterojunction power Schottky rectifiers A. Chen, M. Young and J.M. Woodall A low-matched InGaP on GaAs, to make a high-temperature power rectifier. The LT molecular beam epitaxy technique enables the formation of an abrupt interface between InAs and InGaP. This heterojunction rectifier

  20. Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    Monolithic Millimeter-wave Distributed Amplifiers using AlGaN/GaN HEMTs Rajkumar Santhakumar, Yi have been designed and fabricated using AlGaN/GaN HEMTs. One of them uses a standard HEMT for the unit-gate distributed amplifier achieves a CW peak output power of 1W and a PAE of about 16% at 4GHz. Index Terms -- GaN

  1. Role of strain in polarization switching in semipolar InGaN/GaN quantum wells

    E-Print Network [OSTI]

    Role of strain in polarization switching in semipolar InGaN/GaN quantum wells Qimin Yan,1,a Patrick November 2010 The effect of strain on the valence-band structure of 112¯2 semipolar InGaN grown on GaN D6 is calculated for GaN and InN using density functional theory with the Heyd­Scuseria­ Ernzerhof

  2. GaN/AlGaN heterojunction infrared detector responding in 814 and 2070 m ranges

    E-Print Network [OSTI]

    Perera, A. G. Unil

    GaN/AlGaN heterojunction infrared detector responding in 8­14 and 20­70 m ranges G. Ariyawansa, M October 2006 A GaN/AlGaN heterojunction interfacial work function internal photoemission infrared detector, the work demonstrates 54 m 5.5 THz operation of the detector based on 1s­2p± transition of Si donors in GaN

  3. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

    SciTech Connect (OSTI)

    Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

    2012-01-01T23:59:59.000Z

    AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

  4. Prediction of pressure depletion from wireline and mud logs, Golden Trend field, Garvin County, Oklahoma

    SciTech Connect (OSTI)

    Sorenson, R.P.; White, F.W.; Struckel, J.C.

    1987-08-01T23:59:59.000Z

    The Golden Trend, a giant oil field encompassing several overlapping Pennsylvanian stratigraphic traps on the eastern flank of the Anadarko basin, has undergone a resurgence in the 1980s with deeper drilling for pre-Pennsylvanian targets. Approximately 200 new wells in and near the Antioch Southwest, Panther Creek, and Elmore Northeast waterflood units (T2, 3N, R2, 3W) have encountered evidence of undrained reserves in both established and new pay intervals of Pennsylvanian Hart and Gibson sandstones. Although all porous Hart and Gibson sandstones in the study area were originally oil bearing, evaluation of the state of depletion is necessary for planning future recompletions to these reservoirs. In general, wireline and mud logs over intervals with known production histories exhibit characteristics suggestive of pressure depletion, even in areas of old waterfloods. The most consistent parameters correlating to low reservoir pressure are lost circulation, lack of an increase in penetration rate when drilling porous sandstone, excessive gas effect on neutron-density logs, and low methane and total gas levels on the mud logs. The resistivity invasion profile also reflects lower pressure, but is subtle. The SP curve and gas composition on the mud log do not vary substantially as a function of pressure. Visual sample shows are slightly weaker in depleted sandstones, but are less reliable, owing to dependence on reservoir quality and variations between geologists on oral descriptions of show quality.

  5. Exponential Decay and Fermi's Golden Rule from an Uncontrolled Quantum Zeno Effect

    E-Print Network [OSTI]

    P. W. Bryant

    2014-10-14T23:59:59.000Z

    We modify the theory of the Quantum Zeno Effect to make it consistent with the postulates of quantum mechanics. This modification allows one, throughout a sequence of observations of an excited system, to address the nature of the observable and thereby to distinguish survival from non-decay, which is necessary whenever excited states are degenerate. As a consequence, one can determine which types of measurements can possibly inhibit the exponential decay of the system. We find that continuous monitoring taken as the limit of a sequence of ideal measurements will only inhibit decay in special cases, such as in well-controlled experiments. Uncontrolled monitoring of an unstable system, however, can cause exponentially decreasing non-decay probability at all times. Furthermore, calculating the decay rate for a general sequence of observations leads to a straightforward derivation of Fermi's Golden Rule, that avoids many of the conceptual difficulties normally encountered. When multiple decay channels are available, the derivation reveals how the total decay rate naturally partitions into a sum of the decay rates for the various channels, in agreement with observations. Continuous and unavoidable monitoring of an excited system by an uncontrolled environment may therefore be a mechanism by which to explain the exponential decay law.

  6. 8D Likelihood Effective Higgs Couplings Extraction Framework in the Golden Channel

    SciTech Connect (OSTI)

    Chen, Yi [California Institute of Technology, Pasadena, CA (United States); Di Marco, Emanuele [Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States); Lykken, Joe [Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States); Spiropulu, Maria [California Institute of Technology, Pasadena, CA (United States); Vega-Morales, Roberto [Universite Paris-Sud, Orsay, (France); Xie, Si [California Institute of Technology, Pasadena, CA (United States)

    2015-01-01T23:59:59.000Z

    In this paper we build a comprehensive analysis framework to perform direct extraction of all possible effective Higgs couplings to neutral electroweak gauge bosons in the decay to electrons and muons, the so called `golden channel'. Our framework is based on a maximum likelihood method constructed from analytic expressions of the fully differential cross sections for $h \\rightarrow 4\\ell$ and for the dominant irreducible $q\\bar{q} \\rightarrow 4\\ell$ background, where $4\\ell = 2e2\\mu, 4e, 4\\mu$. Detector effects are included by an explicit convolution of these analytic expressions with the appropriate transfer function over all center of mass variables. Using the full set of decay observables, we construct an unbinned 8-dimensional detector-level likelihood function which is continuous in the effective couplings and includes systematic uncertainties. We consider all possible $ZZ$, $Z\\gamma$ and $\\gamma\\gamma$ couplings, allowing for general CP odd/even admixtures and any possible phases. We describe how the convolution is performed and demonstrate the validity and power of the framework with a number of supporting checks and example fits. The framework can be used to perform a variety of multi-parameter extractions, including their correlations, to determine the Higgs couplings to neutral electroweak gauge bosons using data obtained at the LHC and other future colliders.

  7. Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer

    SciTech Connect (OSTI)

    Chen, Z.; Denbaars, S. P. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Materials Department, University of California, Santa Barbara, California 93106 (United States); Pei, Y.; Newman, S.; Chu, R.; Brown, D.; Keller, S.; Mishra, U. K. [Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Chung, R.; Nakamura, S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2009-03-16T23:59:59.000Z

    Semi-insulating (SI) GaN layers were grown on 4H-SiC substrates by inserting an AlGaN layer between the AlN buffer and the GaN layer. Secondary ion mass spectroscopy measurements showed that the AlGaN layer prevented Si from diffusing from the substrate into the GaN layer. X-ray diffraction and atomic force microscopy analyses showed that an optimized AlGaN interlayer does not degrade the crystal quality or surface morphology of the SI GaN. The room temperature mobility of an AlGaN/GaN heterostructure using this SI GaN was 2200 cm{sup 2}/V s. High electron mobility transistors (HEMTs) with 0.65 {mu}m long gates were also fabricated on these SI GaN buffers. A power density of 19.0 W/mm with a power added efficiency of 48% was demonstrated at 10 GHz at a drain bias of 78 V. These HEMTs also exhibited sharp pinch off, low leakage, and negligible dispersion.

  8. Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy Huajie Chen, Kista, Sweden Abstract Strain-compensated InGaAsP/InGaP superlattices are studied in cross- section. The strain compensated InGaAsP/InGaP/InP superlattices studied here have application for light sources

  9. AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN Metal Oxide Semiconductor Field Effect Transistors using Titanium Dioxide P. J. HANSEN 1 epitaxially on AlGaN/GaN HFET structures by molecular beam epitaxy (MBE). Growth was first performed on GaN templates to establish epitaxial growth conditions. X-ray diffraction showed [001] TiO2 || [1010]GaN

  10. AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium; published 13 October 2004) Use of high-k gate dielectrics in AlGaN/GaN heterostructure field transconductance and pinchoff voltage. To achieve this, AlGaN/GaN metal-oxide-semiconductor heterostructure field

  11. In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device based on a

    E-Print Network [OSTI]

    Yang, Kyounghoon

    205 Abstract In this paper, an AlGaN/GaN high electron mobility transistor (HEMT) device basedBm at 2 GHz have been demonstrated from the fabricated device. 1. Introduction In recent years, AlGaN/GaN noise amplifier and switch. Superior results have been reported in microwave power performance of AlGaN/GaN

  12. A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    A New Architecture for AlGaN/GaN HEMT Frequency Doubler Using Active Integrated Antenna Design presents a new architecture for an AlGaN/GaN HEMT frequency doubler using the active integrated antenna. The antenna operates as a fundamental frequency reflector in this circuit. Using AlGaN/GaN with 1mm gate

  13. Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate,

    E-Print Network [OSTI]

    Boyer, Edmond

    Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Aristide Briand, 92.195 Meudon, France Abstract. Wide bandgap devices such as AlGaN/GaN High Electron of GR- bulges related respectively to AlGaN/GaN interface and quantum well are identified. Each GR

  14. Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

    SciTech Connect (OSTI)

    Kaun, Stephen W.; Burke, Peter G.; Kyle, Erin C. H.; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wong, Man Hoi; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2012-12-24T23:59:59.000Z

    Al{sub x}Ga{sub 1-x}N/GaN (x = 0.06, 0.12, 0.24) and AlGaN/AlN/GaN heterostructures were grown on 6 H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. All growths were performed under Ga-rich conditions by plasma-assisted molecular beam epitaxy. Dominant scattering mechanisms with variations in threading dislocation density and sheet concentration were indicated through temperature-dependent Hall measurements. The inclusion of an AlN interlayer was also considered. Dislocation scattering contributed to reduced mobility in these heterostructures, especially when sheet concentration was low or when an AlN interlayer was present.

  15. Message passing with a limited number of DMA byte counters

    DOE Patents [OSTI]

    Blocksome, Michael (Rochester, MN); Chen, Dong (Croton on Hudson, NY); Giampapa, Mark E. (Irvington, NY); Heidelberger, Philip (Cortlandt Manor, NY); Kumar, Sameer (White Plains, NY); Parker, Jeffrey J. (Rochester, MN)

    2011-10-04T23:59:59.000Z

    A method for passing messages in a parallel computer system constructed as a plurality of compute nodes interconnected as a network where each compute node includes a DMA engine but includes only a limited number of byte counters for tracking a number of bytes that are sent or received by the DMA engine, where the byte counters may be used in shared counter or exclusive counter modes of operation. The method includes using rendezvous protocol, a source compute node deterministically sending a request to send (RTS) message with a single RTS descriptor using an exclusive injection counter to track both the RTS message and message data to be sent in association with the RTS message, to a destination compute node such that the RTS descriptor indicates to the destination compute node that the message data will be adaptively routed to the destination node. Using one DMA FIFO at the source compute node, the RTS descriptors are maintained for rendezvous messages destined for the destination compute node to ensure proper message data ordering thereat. Using a reception counter at a DMA engine, the destination compute node tracks reception of the RTS and associated message data and sends a clear to send (CTS) message to the source node in a rendezvous protocol form of a remote get to accept the RTS message and message data and processing the remote get (CTS) by the source compute node DMA engine to provide the message data to be sent.

  16. InGaAsInP double heterostructures on InPSi templates fabricated by wafer bonding and hydrogen-induced exfoliation

    E-Print Network [OSTI]

    Atwater, Harry

    . Wanlass National Renewable Energy Laboratory, Golden, Colorado 80401 Received 23 January 2003; accepted 3

  17. High efficiency InGaP solar cells for InGaP/GaAs tandem cell application

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Kurita, H.; Ohmori, M. [Japan Energy Corp., Toda, Saitama (Japan). Central Research Lab.

    1994-12-31T23:59:59.000Z

    In this paper, high conversion efficiency single junction InGaP solar cells with n-p-p{sup +} structure are presented and their application to InGaP/GaAs monolithic tandem cells is discussed. In the InGaP cells, a best conversion efficiency of 18.48% was achieved by introducing the p{sup +} peak back surface field (BSF) layer with a high carrier concentration of 2 {times} 10{sup 18} cm{sup {minus}3}, which improved both short circuit current (Isc) and open circuit voltage (Voc). However, in the case of InGaP/GaAs tandem cells, a decrease in carrier concentration of the InGaP BSF layer, which was caused by the diffusion of Zn, was found to reduce the Isc and Voc of the tandem cell. The reduction in the carrier concentration was suppressed by using a thicker BSF layer of 0.5 {micro}m, which reduced the current density in the GaAs bottom cell. An InGaP/GaAs tandem cell with 27.3% efficiency and a high Voc of 2.418 V was obtained.

  18. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation

    E-Print Network [OSTI]

    Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phaseAs was 70% of that on bulk InP at both temperatures. To achieve this, graded buffers in the InGaAs, InGaP

  19. AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates

    E-Print Network [OSTI]

    Manfra, Michael J.

    PS-4 AlGaN/GaN HEMTs grown by Molecular Beam Epitaxy on sapphire, Sic, and HVPE GaN templates Nils ABSTRACT Molecular Beam Epitaxy of GaN and related alloys is becoming a rival to the more established, and HVPE SI-GaN templates on sapphire. While sapphire and SI-Sic are established substrates for the growth

  20. ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/GaN transistors

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    MOSCAP process ?ow: n-GaN substrate; Ohmic metallization andtion for a AlGaN/ GaN HEMT on a substrate which has a poorsapphire substrate, a well-passivated AlGaN/ GaN HEMT grown

  1. Development of engineering geologic performance standards for land-use regulation in Sabine Pass, Texas 

    E-Print Network [OSTI]

    Vaught, Richmond Murphy

    1982-01-01T23:59:59.000Z

    on geologic features (such as chenier ridges), the effects of storm surge on chenier ridges, altered by borrow mining, was modeled physically (wave tank) and mathematically (computer model). Comparison of the physical and mathe- matical models shows... Pass, Texas, an area in the beginning stages of comprehensive urban planning. Sabine Pass is located along the chenier strandplain/coastal system at the Texas-Louisiana border. Processes affecting the chenier ridges and marsh at Sabine Pass...

  2. Green light emission by InGaN/GaN multiple-quantum-well microdisks

    SciTech Connect (OSTI)

    Hsu, Yu-Chi; Lo, Ikai, E-mail: ikailo@mail.phys.nsysu.edu.tw; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Tsai, Cheng-Da; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)] [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China); Hsu, Gary Z. L. [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)] [United Crystal Corporation, No. 243-3, Wenshan 36061, Miaoli, Taiwan (China)

    2014-03-10T23:59:59.000Z

    The high-quality In{sub x}Ga{sub 1?x}N/GaN multiple quantum wells were grown on GaN microdisks with ?-LiAlO{sub 2} substrate by using low-temperature two-step technique of plasma-assisted molecular beam epitaxy. We demonstrated that the hexagonal GaN microdisk can be used as a strain-free substrate to grow the advanced In{sub x}Ga{sub 1?x}N/GaN quantum wells for the optoelectronic applications. We showed that the green light of 566-nm wavelength (2.192?eV) emitted from the In{sub x}Ga{sub 1?x}N/GaN quantum wells was tremendously enhanced in an order of amplitude higher than the UV light of 367-nm wavelength (3.383?eV) from GaN.

  3. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01T23:59:59.000Z

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  4. Analysis of the Impulsive Phase of Solar Flares with Pass 8 LAT data

    E-Print Network [OSTI]

    Desiante, R; Omodei, N; Pesce-Rollins, M

    2015-01-01T23:59:59.000Z

    We show the results of analyses performed on high-energy gamma-ray emission during the impulsive phase of solar flares detected by the LAT using Pass 8 data. We compare results obtained with Pass 7 and Pass 8 data sets, using both LAT Low Energy and standard data classes. With a dedicated event selection, Pass 8 allows standard analysis during the impulsive phase: it has been designed to be less susceptible to pile-up in the LAT Anti-Coincidence Detector caused by the intense hard X-ray emission at early times.

  5. Forty-Four Pass Fibre Optic Loop for Improving the Sensitivity of Surface Plasmon Resonance Sensors

    E-Print Network [OSTI]

    Chin B Su; Jun Kameoka

    2007-09-21T23:59:59.000Z

    A forty-four pass fibre optic surface plasmon resonance sensor that enhances detection sensitivity according to the number of passes is demonstrated for the first time. The technique employs a fibre optic recirculation loop that passes the detection spot forty- four times, thus enhancing sensitivity by a factor of forty-four. Presently, the total number of passes is limited by the onset of lasing action of the recirculation loop. This technique offers a significant sensitivity improvement for various types of plasmon resonance sensors that may be used in chemical and biomolecule detections.

  6. InGaP/GaAs and InGaAs mechanically-stacked triple-junction solar cells

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Agui, T. [Japan Energy Corp., Toda, Saitama (Japan)] [and others

    1997-12-31T23:59:59.000Z

    Triple-junction cells with AM1.5 efficiencies of over 33% have been demonstrated. A planar type InGaP/GaAs monolithic dual-junction cell was fabricated on a semi-insulating FaAs substrate, which has high infra-red transparency. Then a dual-junction cell, with efficiency of 27--28%, was mechanically stacked on an InGaAs cell fabricated on an InP substrate. The bottom InGaAs cell showed an efficiency of 6.2% under the InGaP/GaAs cell, and a total efficiency of 33--34% was achieved for the four-terminal triple-junction cell.

  7. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20T23:59:59.000Z

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  8. Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

    SciTech Connect (OSTI)

    Roul, Basanta; Kumar, Mahesh [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Rajpalke, Mohana K.; Bhat, Thirumaleshwara N.; Krupanidhi, S. B. [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Kalghatgi, A. T. [Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India); Kumar, Nitesh; Sundaresan, A. [Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bangalore 560064 (India)

    2011-10-17T23:59:59.000Z

    We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm{sup -1} in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy.

  9. Sediment pass-through, an alternative to reservoir dredging

    SciTech Connect (OSTI)

    Harrison, L.L.; Lee, W.H. [Pacific Gas and Electric Co., San Francisco, CA (United States); Tu, S. [Pacific and Gas Electric Co., San Ramon, CA (United States)

    1995-12-31T23:59:59.000Z

    Pacific Gas and Electric Company (PG&E) is studying an alternative {open_quotes}Sediment Management Plan{close_quotes} (SMP) to control sediments at Rock Creek Reservoir and the downstream Cresta Reservoir on the North Fork Feather River in Plumas County. The reservoirs are part of the 182,000 kW Rock Creek-Cresta Project hydroelectric development. Approximately 5.4 million cubic meters of sediments, deposited in the two reservoirs since they were placed in service in 1949 and 1950, partially obstruct the dams` low level outlets and pipe inlets supplying water for spillway gate operations. The sediments jeopardize the reliable and efficient operation of the dams and powerhouses. The SMP includes retrofitting Rock Creek and Cresta Dams with additional low-level gated outlets and modification of trash racks at the existing low level outlet pipes at each dam to improve sediment pass-through (SPT) capacity during high flows. Also, to enable construction of the dam modifications and to facilitate the initiation of SPT operation, dredging of approximately 46,000 cubic meters at Rock Creek Reservoir and 57,000 cubic meters at Cresta Reservoir can be accomplished using a new slurry pump dredging technology to minimize turbidity and re-suspension of solids during dredging. It is proposed to deposit the sediment on the reservoir bottoms, upstream of the areas to be dredged. The dredged sediments subsequently would be flushed from the reservoirs during SPT operations to ultimately be deposited in the dead storage volume of a large downstream reservoir, Lake Oroville. The SPT management plan supersedes more costly plans for major dredging, and may preclude the need for future maintenance dredging at the reservoirs.

  10. Sitewide Environmental Assessment for the National Renewable Energy Laboratory, Golden, Colorado

    SciTech Connect (OSTI)

    Not Available

    1993-05-04T23:59:59.000Z

    The Solar Energy Research, Development, and Demonstration Act of 1974 authorized a federal program to develop solar energy as a viable source of the nation`s future energy needs. Under this authority, the National Renewable Energy Laboratory (NREL) was created as a laboratory of the Department of Energy (DOE) to research a number of renewable energy possibilities. The laboratory conducts its operations both in government-owned facilities on the NREL South Table Mountain (STM) Site near Golden, Colorado, and in a number of leased facilities, particularly the Denver West Office Park. NREL operations include research in energy technologies, and other areas of national environmental and energy technology interest. Examples of these technologies include electricity from sunlight with solar cells (photovoltaics); energy from wind (windmills or wind turbines); conversion of plants and plant products (biomass) into liquid fuels (ethanol and methanol); heat from the sun (solar thermal) in place of wood, oil, gas, coal and other forms of heating; and solar buildings. NREL proposes to continue and expand the present R&D efforts in C&R energy by making infrastructure improvements and constructing facilities to eventually consolidate the R&D and associated support activities at its STM Site. In addition, it is proposed that operations continue in current leased space at the present levels of activity until site development is complete. The construction schedule proposed is designed to develop the site as rapidly as possible, dependent on Congressional funding, to accommodate not only the existing R&D that is being conducted in leased facilities off-site but to also allow for the 20-year projected growth. Impacts from operations currently conducted off-site are quantified and added to the cumulative impacts of the STM site. This environmental assessment provides information to determine the severity of impacts on the environment from the proposed action.

  11. Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2007-02-01T23:59:59.000Z

    The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

  12. September 16-21, 2007 Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN as etch-stop layer

    E-Print Network [OSTI]

    Pala, Nezih

    0 2 V(V) C(pF) Before etching (material) After etching (device) G AlGaN substrate i-GaN DS AlN AlGaN substrate AlN i-GaN AlGaN S G DAlGaNAlGaN InGaNInGaN Standard gate recess InGaN stop layer gate recess InGaNICNS 7 September 16-21, 2007 ­ Las Vegas, Nevada Gate recess technology on AlGaN/GaN HFET with InGaN

  13. Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen

    E-Print Network [OSTI]

    York, Robert A.

    Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN P. J. Hansen Materials Department March 2005 Titanium dioxide TiO2, with the rutile structure was grown on 0001 oriented GaN and 0001 Al0.33Ga0.67N/GaN heterostructure field effect transistor HFET structures by molecular beam epitaxy. X

  14. Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells

    E-Print Network [OSTI]

    Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN based on radial p­i­n multi quantum well (QW) junctions have been realized from GaN wires grown by catalyst- free metal organic vapor phase epitaxy. The Inx Ga1Àx N/GaN undoped QW system is coated over both

  15. High density plasma damage in InGaP/GaAs as AlGaAs/GaAs high electron mobility transistors

    SciTech Connect (OSTI)

    Lee, J.W.; Pearton, S.J. [Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering; Ren, F.; Kopf, R.F.; Kuo, J.M. [Bell Labs., Murray Hill, NJ (United States). Lucent Technologies; Shul, R.J. [Sandia National Labs., Albuquerque, NM (United States); Constantine, C.; Johnson, D. [Plasma-Therm Inc., St. Petersburg, FL (United States)

    1998-11-01T23:59:59.000Z

    The introduction of plasma damage in InGaP/GaAs and AlGaAs/GaAs high electron mobility transistors (HEMTs) has been investigated using both inductively coupled plasma and electron cyclotron resonance Ar discharges. The saturated drain-source current is found to be decreased through introduction of compensating deep levels into the InGaP or AlGaAs donor layer. The degradation of device performance is a strong function of ion energy and ion flux, and an advantage of both high density plasma tools is that ion energy can be reduced by increasing the plasma density. Increasing process pressure and source power, and decreasing radio-frequency chuck power produce the lowest amounts of plasma damage in HEMTs.

  16. Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates

    E-Print Network [OSTI]

    Comparison of compressive and tensile relaxed composition-graded GaAsP and ,,Al...InGaP substrates, around 104 cm-2 . The structures, grown on GaP or GaAs, consist of graded In-fraction InGaP and AlInGaP. High surface roughness and branch defects in Al InGaP lead to the lowest quality virtual substrates we

  17. Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method

    E-Print Network [OSTI]

    Okamoto, Koichi

    Carrier Dynamics in InGaN/GaN SQW Structure Probed by the Transient Grating Method; 78.55.Cr; 78.67.De; S7.14 Carrier dynamics in GaN and InGaN/GaN SQW structures were observed by using inhomogeneity of In composition. Recently, InGaN/GaN-based light emitting diodes (LEDs) have been commercialized

  18. The Golden Gate Textile Barrier: Preserving California Bay of San Francisco from a Rising North Pacific Ocean

    E-Print Network [OSTI]

    Cathcart, R B; Bolonkin, Alexander A.; Cathcart, Richart B.

    2007-01-01T23:59:59.000Z

    Climate change in California may require construction of a barrier separating the Pacific Ocean from San Francisco Bay and the Sacramento River-San Joaquin River Delta simply because Southern California is remarkably dependent on freshwater exported from the Delta. We offer a new kind of salt barrier, a macroproject built of impermeable textile materials stretched across the Golden Gate beneath the famous bridge. We anticipate it might eventually substitute for a recently proposed San Francisco In-Stream Tidal Power Plant harnessing a 1.7 m tide at the Bay entrance if future climate conditions Statewide is conducive. First-glance physics underpin our macroproject.

  19. The Golden Gate Textile Barrier: Preserving California Bay of San Francisco from a Rising North Pacific Ocean

    E-Print Network [OSTI]

    Richart B. Cathcart; Alexander A. Bolonkin

    2007-02-04T23:59:59.000Z

    Climate change in California may require construction of a barrier separating the Pacific Ocean from San Francisco Bay and the Sacramento River-San Joaquin River Delta simply because Southern California is remarkably dependent on freshwater exported from the Delta. We offer a new kind of salt barrier, a macroproject built of impermeable textile materials stretched across the Golden Gate beneath the famous bridge. We anticipate it might eventually substitute for a recently proposed San Francisco In-Stream Tidal Power Plant harnessing a 1.7 m tide at the Bay entrance if future climate conditions Statewide is conducive. First-glance physics underpin our macroproject.

  20. Various Carbon to Carbon Bond Lengths Inter-related via the Golden Ratio, and their Linear Dependence on Bond Energies

    E-Print Network [OSTI]

    Raji Heyrovska

    2008-09-11T23:59:59.000Z

    This work presents the relations between the carbon to carbon bond lengths in the single, double and triple bonds and in graphite, butadiene and benzene. The Golden ratio, which was shown to divide the Bohr radius into two parts pertaining to the charged particles, the electron and proton, and to divide inter-atomic distances into their cationic and anionic radii, also plays a role in the carbon-carbon bonds and in the ionic/polar character of those in graphite, butadiene and benzene. Further, the bond energies of the various CC bonds are shown to vary linearly with the bond lengths.

  1. N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology

    E-Print Network [OSTI]

    Chung, Jinwook

    We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier ...

  2. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of InGaNGaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture Development and Industrialization of InGaNGaN LEDs on Patterned Sapphire...

  3. Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate

    E-Print Network [OSTI]

    Lu, Bin

    AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for power electronics applications. Despite the low cost of the Si substrate, the breakdown voltage (V[subscript ...

  4. Distributed Optimization, Estimation, and Control of Networked Systems through Event-triggered Message Passing

    E-Print Network [OSTI]

    Lemmon, Michael

    -triggered Message Passing 1 Introduction This project will investigate distributed optimization, estimation, and control of networked systems through the use of event-triggered message passing. Networked systems consist of distributed decision systems. Indi- vidual agents coordinate their actions through message exchanges

  5. Modelling of the bead formation during multi pass hybrid laser/gas metal arc welding

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    - 1 - Modelling of the bead formation during multi pass hybrid laser/gas metal arc welding Olivier dimensional finite element model has been developed to simulate weld bead formation in multi pass hybrid laser/gas metal arc welding. The model considers both a gas metal arc welding (GMAW) electrode and a laser beam

  6. SHORT-WAVELENGTH, SINGLE-PASS FREE-ELECTRON LASERS J. Rossbach, DESY, 22603 Hamburg, Germany

    E-Print Network [OSTI]

    SHORT-WAVELENGTH, SINGLE-PASS FREE-ELECTRON LASERS J. Rossbach, DESY, 22603 Hamburg, Germany in demonstration of high power gain at single- pass free-electron lasers operating in the wavelength range from in the undulator. Eq. (1) exhibits two main advantages of the free-electron laser: the free tunability

  7. Regulation for Underground Storage of CO2 Passed by U.S. States

    E-Print Network [OSTI]

    Regulation for Underground Storage of CO2 Passed by U.S. States Holly Javedan Massachusetts Institute of Technology 77 Massachusetts Avenue, Cambridge, MA 02139 #12;p. 2 TABLE OF CONTENTS ABSTRACT capture, transportation, injection and storage of CO2. To date nine states have passed regulation

  8. Implementation and Evaluation of an On-Demand Parameter-Passing Strategy for Reducing Energy

    E-Print Network [OSTI]

    Zhang, Wei

    Implementation and Evaluation of an On-Demand Parameter-Passing Strategy for Reducing Energy M Abstract In this paper, we present an energy-aware parameter- passing strategy called on-demand parameter UMIST Manchester M60 1QD, UK W.Zhang CSE Department Penn State University University Park, PA, 16802

  9. Sensor-based Dynamic Trajectory Planning for Smooth Door Passing of Intelligent Wheelchairs

    E-Print Network [OSTI]

    Hu, Huosheng

    for elderly and disabled people to control a wheelchair passing a narrow doorway manually. This paper presents environment. The wheelchair users are normally el- derly and disabled, who may suffer some types wheelchairs that are able to provide automatic door passing functionality so that wheelchair users can easily

  10. Asymmetric and nonlinear pass-through of crude oil prices to gasoline and natural gas prices

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Asymmetric and nonlinear pass-through of crude oil prices to gasoline and natural gas prices Ahmed distributed lags (NARDL) mod- el to examine the pass-through of crude oil prices into gasoline and natural gas the possibility to quantify the respective responses of gasoline and natural gas prices to positive and negative

  11. Siemens Pittsburgh, PA Novelis Corporation Atlanta, GA

    E-Print Network [OSTI]

    McGaughey, Alan

    Industrial Design ­ Shanghai, China Eaton Corporation ­ Pittsburgh, PA CMU, CTTEC ­ PittsburghSiemens ­ Pittsburgh, PA Novelis Corporation ­ Atlanta, GA Expense

  12. Strain-balanced InGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Van Den Broeck, D. M.; Hosalli, A. M.; Bedair, S. M. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Bharrat, D.; El-Masry, N. A. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2014-07-21T23:59:59.000Z

    InGaN/GaN multiple quantum well (MQW) structures suffer from a high amount of compressive strain in the InGaN wells and the accompanied piezoelectric field resulting in both a blue shift in emission and a reduction of emission intensity. We report the growth of In{sub x}Ga{sub 1?x}N/GaN “strain-balanced” multiple quantum wells (SBMQWs) grown on thick In{sub y}Ga{sub 1?y}N templates for x?>?y by metal organic chemical vapor deposition. SBMQWs consist of alternating layers of In{sub x}Ga{sub 1?x}N wells and GaN barriers under compressive and tensile stress, respectively, which have been lattice matched to a thick In{sub y}Ga{sub 1?y}N template. Growth of the In{sub y}Ga{sub 1?y}N template is also detailed in order to achieve thick, relaxed In{sub y}Ga{sub 1?y}N grown on GaN without the presence of V-grooves. When compared to conventional In{sub x}Ga{sub 1?x}N/GaN MQWs grown on GaN, the SBMQW structures exhibit longer wavelength emission and higher emission intensity for the same InN mole fraction due to a reduction in the well strain and piezoelectric field. By matching the average lattice constant of the MQW active region to the lattice constant of the In{sub y}Ga{sub 1?y}N template, essentially an infinite number of periods can be grown using the SBMQW growth method without relaxation-related effects. SBMQWs can be utilized to achieve longer wavelength emission in light emitting diodes without the use of excess indium and can be advantageous in addressing the “green gap.”.

  13. High current gain InGaN=GaN HBTs with C operating temperature

    E-Print Network [OSTI]

    Asbeck, Peter M.

    with an $20 nm low-temperature (Tg ¼ 550 C) GaN buffer layer on a (0001) sapphire substrate. The layer 1018 cmÀ3 Buffer GaN 2.5 mm ­ Substrate Sapphire ­ ­ HBT device processing began by depositing a 100 nmHigh current gain InGaN=GaN HBTs with 300 C operating temperature D.M. Keogh, P.M. Asbeck, T. Chung

  14. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  15. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  16. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01T23:59:59.000Z

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  17. Fine structure of Fe-Co-Ga and Fe-Cr-Ga alloys with low Ga content

    SciTech Connect (OSTI)

    Kleinerman, Nadezhda M., E-mail: kleinerman@imp.uran.ru; Serikov, Vadim V., E-mail: kleinerman@imp.uran.ru; Vershinin, Aleksandr V., E-mail: kleinerman@imp.uran.ru; Mushnikov, Nikolai V., E-mail: kleinerman@imp.uran.ru; Stashkova, Liudmila A., E-mail: kleinerman@imp.uran.ru [Institute of Metal Physics UB RAS, S. Kovalevskaya str. 18, 620990 Ekaterinburg (Russian Federation)

    2014-10-27T23:59:59.000Z

    Investigation of Ga influence on the structure of Fe-Cr and Fe-Co alloys was performed with the use of {sup 57}Fe Mössbauer spectroscopy and X-ray diffraction methods. In the alloys of the Fe-Cr system, doping with Ga handicaps the decomposition of solid solutions, observed in the binary alloys, and increases its stability. In the alloys with Co, Ga also favors the uniformity of solid solutions. The analysis of Mössbauer experiments gives some grounds to conclude that if, owing to liquation, clusterization, or initial stages of phase separation, there exist regions enriched in iron, some amount of Ga atoms prefer to enter the nearest surroundings of iron atoms, thus forming binary Fe-Ga regions (or phases)

  18. TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer

    SciTech Connect (OSTI)

    Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

    2008-01-01T23:59:59.000Z

    It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

  19. Excitonic properties of strained wurtzite and zinc-blende GaNAlxGa1xN quantum dots

    E-Print Network [OSTI]

    Fonoberov, Vladimir

    Excitonic properties of strained wurtzite and zinc-blende GaNÕAlxGa1ÀxN quantum dots Vladimir A 2003 We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite WZ of GaN QDs.1­8 Molecu- lar beam epitaxial growth in the Stranski­Krastanov mode of wurtzite WZ Ga

  20. Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices

    E-Print Network [OSTI]

    Feenstra, Randall

    Morphological and compositional variations in strain- compensated InGaAsP/InGaP superlattices R of Technology, Kista, Sweden Abstract We have investigated the properties of strain-compensated InGaAsP/In- GaP superlattices, grown by metalorganic vapor phase epitaxy, with and without InP interlayers inserted in the InGaP

  1. Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1

    E-Print Network [OSTI]

    Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1 , Kristian of GaAs based self-aligned lasers based upon a single overgrowth. A lattice matched n-doped InGaP layer were exposed to oxygen. True buried heterostructures devices utilising InGaP clad- ding layers have

  2. Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates

    E-Print Network [OSTI]

    Microstructure and luminescent properties of novel InGaP alloys on relaxed GaAsP substrates M. J of unconventional alloys of InGaP with In fraction of 0.2­0.4 grown on fully relaxed GaAsP virtual substrates demonstrate growth of extremely high quality InGaP heterostructures which hold promise for fabrication

  3. Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Band Offsets of InGaP/GaAs Heterojunctions by Scanning Tunneling Spectroscopy Y. Dong and R. M Abstract Scanning tunneling microscopy and spectroscopy are used to study InGaP/GaAs heterojunctions computation of the tunnel current. Curve fitting of theory to experiment is performed. Using an InGaP band gap

  4. Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1

    E-Print Network [OSTI]

    Dietz, Nikolaus

    Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1 G. Ariyawansa,1 online 2 September 2009 A study of trap states in n+ -GaN/AlGaN heterostructures using electrical related absorption centers attributed to shallow Si-donor pinned to the AlGaN barrier , N-vacancy/ C

  5. High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop

    E-Print Network [OSTI]

    Itoh, Tatsuo

    High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop amplifier module using AlGaN/GaN high electron mobility transistor (HEMT) has been developed that covers radars and communications systems. GaN-based HEMT's for high power applications at microwave frequencies

  6. Impact ionization in N-polar AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Uren, M. J.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Keller, S.; Kolluri, S.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of Santa Barbara California, Santa Barbara, California 93106 (United States)

    2014-08-11T23:59:59.000Z

    The existence of impact ionization as one of the open questions for GaN device reliability was studied in N-polar AlGaN/GaN high electron mobility transistors. Electroluminescence (EL) imaging and spectroscopy from underneath the device gate contact revealed the presence of hot electrons in excess of the GaN bandgap energy even at moderate on-state bias conditions, enabling impact ionization with hole currents up to several hundreds of pA/mm. The detection of high energy luminescence from hot electrons demonstrates that EL analysis is a highly sensitive tool to study degradation mechanisms in GaN devices.

  7. Michael J. Poston Atlanta, GA 30307

    E-Print Network [OSTI]

    Orlando, Thomas

    Page | 1 Michael J. Poston Atlanta, GA 30307 Michael.Poston@gatech.edu Cell: 770.561.4756 U.S. Citizen Education PhD Candidate in Chemistry Georgia Institute of Technology, Atlanta, GA August 2007 with Application to Lunar Observations," JGR ­ Planets, 118, 105, doi: 10.1002/jgre.20025. Poston, M. J

  8. Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor

    E-Print Network [OSTI]

    Peale, Robert E.

    of materials systems such as GaAs/AlGaAs,3 InGaP/InGaAs/GaAs,4 GaN/AlGaN,2,5 and Si Ref. 1 have been explored

  9. FUPWG Meeting Agenda - Atlanta, GA | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA Energy on My Mind FUPWG Atlanta, GA May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta,...

  10. First results of electron temperature measurements by the use of multi-pass Thomson scattering system in GAMMA 10

    SciTech Connect (OSTI)

    Yoshikawa, M., E-mail: yosikawa@prc.tsukuba.ac.jp; Nagasu, K.; Shimamura, Y.; Shima, Y.; Kohagura, J.; Sakamoto, M.; Nakashima, Y.; Imai, T.; Ichimura, M. [Plasma Research Center, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan); Yasuhara, R.; Yamada, I.; Funaba, H.; Kawahata, K. [National Institute for Fusion Science, 322-6 Oroshi-cho, Toki, Gifu 509-5292 (Japan); Minami, T. [Institute of Advanced Energy, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan)

    2014-11-15T23:59:59.000Z

    A multi-pass Thomson scattering (TS) has the advantage of enhancing scattered signals. We constructed a multi-pass TS system for a polarisation-based system and an image relaying system modelled on the GAMMA 10 TS system. We undertook Raman scattering experiments both for the multi-pass setting and for checking the optical components. Moreover, we applied the system to the electron temperature measurements in the GAMMA 10 plasma for the first time. The integrated scattering signal was magnified by approximately three times by using the multi-pass TS system with four passes. The electron temperature measurement accuracy is improved by using this multi-pass system.

  11. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A. [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Fujioka, H., E-mail: hfujioka@iis.u-tokyo.ac.jp [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); CREST, Japan Science and Technology Corporation (JST), 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075 (Japan)

    2014-05-05T23:59:59.000Z

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3?×?10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  12. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar bandgap range. Index Terms--Epitaxy, GaAsP, InGaP, metamorphic. I. INTRODUCTION TODAY'S highest efficiency

  13. Survival Rates of Juvenile Salmonids Passing Through the Bonneville Dam and Spillway in 2008

    SciTech Connect (OSTI)

    Ploskey, Gene R.; Weiland, Mark A.; Faber, Derrek M.; Deng, Zhiqun; Johnson, Gary E.; Hughes, James S.; Zimmerman, Shon A.; Monter, Tyrell J.; Cushing, Aaron W.; Wilberding, Matthew C.; Durham, Robin E.; Townsend, R. L.; Skalski, J. R.; Buchanan, Rebecca A.; Kim, Jina; Fischer, Eric S.; Meyer, Matthew M.; McComas, Roy L.; Everett, Jason

    2009-12-28T23:59:59.000Z

    This report describes a 2008 acoustic telemetry survival study conducted by the Pacific Northwest National Laboratory for the Portland District of the U.S. Army Corps of Engineers. The study estimated the survival of juvenile Chinook salmon and steelhead passing Bonneville Dam (BON) and its spillway. Of particular interest was the relative survival of smolts detected passing through end spill bays 1-3 and 16-18, which had deep flow deflectors immediately downstream of spill gates, versus survival of smolts passing middle spill bays 4-15, which had shallow flow deflectors.

  14. Defect structures in rapidly degraded InGaAsP/InGaP double-heterostructure lasers

    SciTech Connect (OSTI)

    Ueda, O.; Wakao, K.; Yamaguchi, A.; Isozumi, S.; Komiya, S.

    1985-03-01T23:59:59.000Z

    Rapidly degraded InGaAsP/InGaP double-heterostructure lasers grown on (001)-oriented GaAs substrates by liquid phase epitaxy have been investigated by photolumi

  15. Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well

    SciTech Connect (OSTI)

    Zvonkov, B. N.; Nekorkin, S. M.; Vikhrova, O. V.; Dikareva, N. V., E-mail: dikareva@nifti.unn.ru [Nizhni Novgorod State University, Physical-Technical Research Institute (Russian Federation)

    2013-09-15T23:59:59.000Z

    The specific features of the emission characteristics of GaAs-based heterostructures with a GaAs{sub 1-x}Sb{sub x}-In{sub y}Ga{sub 1-y}As bilayer quantum well are studied. The heterostructures are grown by metal-organic chemical vapor deposition (MOCVD). With an analysis of previously reported data on the MOCVD growth process taken into account, the temperature range (560-580 Degree-Sign C), the relation between the fluxes emitted by the sources of Group-V and -III elements ( Less-Than-Or-Equivalent-To 1), and the order of layer growth for the production of the active region of a GaAs/InGaP laser heterostructure are determined experimentally. The active region is a GaAs{sub 0.75}Sb{sub 0.25}-In{sub 0.2}Ga{sub 0.8}As bilayer quantum well. For the structure, a 1075-nm electroluminescence signal attributed to indirect transitions between the valence band of the GaAs{sub 0.75}Sb{sub 0.25} layer and the conduction band of the In{sub 0.2}Ga{sub 0.8}As layer is observed. An increase in the continuous-wave pump current yields a decrease in the 1075-nm emission intensity and initiates stable lasing at a wavelength of 1022 nm at a threshold current density of 1.4 kA cm{sup -2} at room temperature. Lasing occurs at transitions direct in coordinate space.

  16. AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh

    E-Print Network [OSTI]

    Itoh, Tatsuo

    AlGaN/GaN HFET Single-Ended Frequency Doubler Younkyu Chung and Tatsuo Itoh Department-mail: ykchung@ee.ucla.edu Abstract - This paper presents the first single-ended AlGaN/GaN heterojunction field, respectively. For the frequency doubler with 1mm gate periphery AlGaN/GaN HFET, conversion gain of 0.17 d

  17. Materials Science and Engineering B59 (1999) 319322 Microcalorimetric absorption spectroscopy in GaNAlGaN

    E-Print Network [OSTI]

    Nabben, Reinhard

    1999-01-01T23:59:59.000Z

    Microcalorimetric measurements of small absorption coefficients have been performed on thin GaN­AlGaN quantum wells in GaN­AlGaN quantum wells Axel Go¨ldner a, *, Axel Hoffmann a , Bernard Gil b , Pierre Lefebvre b at the energy of the GaN buffer and at the energy of the thick AlGaN barrier layers, we could also readily

  18. Al fraction induced effects on the capacitance characteristics -GaN/AlxGa1-xN IR detectors

    E-Print Network [OSTI]

    Dietz, Nikolaus

    substrate. As shown in Fig. 1(a), the device structures consist of a 0.2 m n+ -GaN top contact (emitter.1117/12.828156 Proc. of SPIE Vol. 7467 74670W-1 #12;(a) Sapphire Substrate n GaN Bottom Contact AlxGa1-xN Barrier n GaNAl fraction induced effects on the capacitance characteristics of n+ -GaN/AlxGa1-xN IR detectors

  19. Improvement of breakdown voltage in InGaP/InGaAs/GaAs heterostructure MESFETs for MMICs

    SciTech Connect (OSTI)

    Koh, Inoue; Yamane, Yasuro; Shiojima, Kenji [NTT LSI Lab., Kanagawa (Japan)] [and others

    1995-12-31T23:59:59.000Z

    This paper describes the trade-off between breakdown voltage and RF performance of InGaP/InGaAs/GaAs heterostructure MESFETs for power amplifiers and oscillators in multi-function MMICs in the millimeter-wave range. The authors successfully improved both gate-drain and drain-source breakdown voltages while maintaining excellent high-frequency performance by using a double-layered gate consisting of WSiN with different nitrogen contents, and by varying epitaxial layer thickness and implantation dose.

  20. Experimental Demonstration of End-to-End Message Passing for HPC systems through a Hybrid Optical Switch

    E-Print Network [OSTI]

    Kolner, Brian H.

    optical switch and FPGAs emulating a High Performance Computing system. The experiment-driven simulation-latency message passing is critical to High Performance Computing (HPC) systems. The Message Passing Interface

  1. SEMI-ANNUAL REPORTS FOR SABINE PASS LIQUEFACTION, LLC - FE DKT...

    Broader source: Energy.gov (indexed) [DOE]

    111-LNG - ORDER 2961 & 2961-A SEMI-ANNUAL REPORTS FOR SABINE PASS LIQUEFACTION, LLC - FE DKT. NO. 10-111-LNG - ORDER 2961 & 2961-A April 2011 October 2011 April 2012 October 2012...

  2. SEMI-ANNUAL REPORTS FOR SABINE PASS LIQUEFACTION, LLC - FE DKT...

    Broader source: Energy.gov (indexed) [DOE]

    30-LNG - ORDER 3306 SEMI-ANNUAL REPORTS FOR SABINE PASS LIQUEFACTION, LLC - FE DKT. NO. 13-30-LNG - ORDER 3306 No reports submitted. More Documents & Publications SEMI-ANNUAL...

  3. SEMI-ANNUAL REPORTS FOR SABINE PASS LIQUEFACTION, LLC - FE DKT...

    Broader source: Energy.gov (indexed) [DOE]

    42-LNG - ORDER 3307 SEMI-ANNUAL REPORTS FOR SABINE PASS LIQUEFACTION, LLC - FE DKT. NO. 13-42-LNG - ORDER 3307 No reports submitted. More Documents & Publications SEMI-ANNUAL...

  4. SEMI-ANNUAL REPORTS FOR SABINE PASS LIQUEFACTION, LLC - FE DKT...

    Broader source: Energy.gov (indexed) [DOE]

    85-LNG - ORDER 2833 SEMI-ANNUAL REPORTS FOR SABINE PASS LIQUEFACTION, LLC - FE DKT. NO. 10-85-LNG - ORDER 2833 April 2011 October 2011 April 2012 October 2012 April 2013 October...

  5. Jet impingement heat transfer in two-pass rotating rectangular channels

    E-Print Network [OSTI]

    Zhang, Yuming

    1996-01-01T23:59:59.000Z

    The combined effects of rotation and jet impingement on local heat transfer in a two-pass rotating rectangular channel is studied. The results of an experimental investigation on the surface heat transfer coefficients under a perforated plate...

  6. Quantifying the current and future impacts of the MBTA Corporate Pass Program

    E-Print Network [OSTI]

    Kamfonik, Dianne E

    2013-01-01T23:59:59.000Z

    Many city and regional transportation authorities, including the Massachusetts Bay Transportation Authority (MBTA) in Boston, offer a monthly pass to local employers which they can distribute to their employees. There are ...

  7. Venture Global Calcasieu Pass, LLC- FE Dkt. No.- 15-25-LNG

    Broader source: Energy.gov [DOE]

    The Office of Fossil Energy gives notice of receipt of an Application filed February 9, 2015, by Venture Global Calcasieu Pass, LLC (Venture Global), seeking a long-term multi-contract...

  8. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

    2011-01-07T23:59:59.000Z

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  9. Necessity of Ga prelayers in GaAs/Ge growth using gas-source molecular beam epitaxy

    E-Print Network [OSTI]

    in a highly defective GaAs layer.as5 Recently, InGaP light-emitting diodes have been fabricated on Si using

  10. High-efficiency radiation-resistant InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Takamoto, T. [Toyota Technological Inst., Tempaku, Nagoya (Japan); [Japan Energy Corp., Toda, Saitama (Japan); Yamaguchi, M.; Taylor, S.J. [Toyota Technological Inst., Tempaku, Nagoya (Japan); Ikeda, E.; Agui, T.; Kurita, H. [Japan Energy Corp., Toda, Saitama (Japan)

    1997-12-31T23:59:59.000Z

    A world-record efficiency of 26.9% (AM0, 28 C) has been obtained for InGaP/GaAs tandem solar cells fabricated by the MOCVD method. The radiation resistance of the InGaP/GaAs tandem solar cells has also been evaluated following 1 MeV electron irradiation. Degradation in the tandem cell performance has been confirmed to be mainly attributed to large degradation in the GaAs bottom cell, which features a highly doped base layer. Similar radiation-resistance with GaAs-on-Ge cells has been observed for the InGaP/GaAs tandem cell. However, some recovery of the tandem cell performance has been found due to minority-carrier injection under light illumination of forward bias, which causes defect annealing in InGaP cells. The optimal design of the InGaP base layer thickness for current matching at end of life (EOL) (after irradiation with 10{sup 15} electrons cm{sup {minus}2}) has been examined.

  11. RULES AND PROCEDURES URI/CCRI PARKING PASS One Sabin Street 02903 401-458-6000

    E-Print Network [OSTI]

    Rhode Island, University of

    the gate arm for entry or exit. Do not attempt to use a pass from a previous semester, it has been turned and each final exam; one use is - one entry/exit cycle. The Pass is read on entry, - and an exit of the day at the North or South Garages. Your uses will decrease by one use (each entry/exit cycle) until

  12. Pressure drop and heat transfer distributions in three-pass rectangular channels with rib turbulators

    E-Print Network [OSTI]

    Zhang, Peng

    1988-01-01T23:59:59.000Z

    PRESSURE DROP AND HEAT TRANSFER DISTRIBUTIONS IN THREE-PASS RECTANGULAR CHANNELS WITH RIB TURBULATORS A THESIS by PENG ZHANG Submitted to the Graduate College of Texas AkM University in partial fulfillment of the requirements for the degree... of MASTER OF SCIENCE August 1988 Major Subject: Mechanical Engineering PRESSURE DROP AND HEAT TRANSFER DISTRIBUTIONS IN THREE-PASS RECTANGULAR CHANNELS WITH RIB TURBULATORS A THESIS by PENG ZHANG Approved as to style and content by: J. C. Han...

  13. A dynamic stability analysis of an aircraft passing through the trailing vortices of another aircraft

    E-Print Network [OSTI]

    De Santo, Robert James William

    1972-01-01T23:59:59.000Z

    A DYNAMIC STABILITY ANALYSIS OF AN AIRCRAFT PASSING THROUGH THE TRAILING VORTICES OF ANOTHER AIRCRAFT A Thesi~ x ROBERT J. MAE SANTO, JR. Submitted to the Graduate College of Texas A&M University in partial fulfillment of the requirement... for the degree of MASTER OF SCIENCE December 1972 Major Subject: Aerospace Engineering A DYNAMIC STABILITY ANALYSIS OF AN AIRCRAFT PASSING THROUGH THE TRAILING VORTICES OF ANOTHER AIRCRAFT A Thesis by ROBERT J. W. DE SANTO) JR. Approved as to style...

  14. Progress report for the commercialization of a one pass cotton plowdown. Technical progress report, April--June 1996

    SciTech Connect (OSTI)

    NONE

    1996-07-28T23:59:59.000Z

    Progress is described on the design, performance, and commercialization of a one pass cotton plowdown machine. Photos are included.

  15. 702 IEEEJOURNAL OF QUAKTUM ELECTRONICS OCTOBER phases of the q pump modes. asis the single pass power loss of the

    E-Print Network [OSTI]

    Teich, Malvin C.

    power loss of the signal modes, and allidler modes are assumed to have the same single pass loss ai. K

  16. JEMMRLA - Electron Model of a Muon RLA with Multi-pass Arcs

    SciTech Connect (OSTI)

    Bogacz, Slawomir Alex; Krafft, Geoffrey A.; Morozov, Vasiliy S.; Roblin, Yves R.

    2013-06-01T23:59:59.000Z

    We propose a demonstration experiment for a new concept of a 'dogbone' RLA with multi-pass return arcs -- JEMMRLA (Jlab Electron Model of Muon RLA). Such an RLA with linear-field multi-pass arcs was introduced for rapid acceleration of muons for the next generation of Muon Facilities. It allows for efficient use of expensive RF while the multi-pass arc design based on linear combined-function magnets exhibits a number of advantages over separate-arc or pulsed-arc designs. Here we describe a test of this concept by scaling a GeV scale muon design for electrons. Scaling muon momenta by the muon-to-electron mass ratio leads to a scheme, in which a 4.5 MeV electron beam is injected in the middle of a 3 MeV/pass linac with two double-pass return arcs and is accelerated to 18 MeV in 4.5 passes. All spatial dimensions including the orbit distortion are scaled by a factor of 7.5, which arises from scaling the 200 MHz muon RF to a readily available 1.5 GHz. The hardware requirements are not very demanding making it straightforward to implement. Such an RLA may have applications going beyond muon acceleration: in medical isotope production, radiation cancer therapy and homeland security.

  17. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

    2014-09-08T23:59:59.000Z

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  18. Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells

    E-Print Network [OSTI]

    Alpay, S. Pamir

    Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple InxGa1-xN(InGaN)/GaN multilayers on the In composition and misfit strain. The results indicate that for non-polar m-plane configurations with ½1210InGaN//½1210GaN and ½0001InGaN//½0001GaN epitaxial

  19. PIV flow measurements for heat transfer characterization in two-pass square channels with smooth and 90 ribbed walls

    E-Print Network [OSTI]

    Kihm, IconKenneth David

    -pass square channel with a smooth wall and a 90° rib-roughened wall. Detailed averaged velocity distributions enhancements for both smooth and ribbed wall two-pass square channels. The rib-induced flow turbulence distribution in two-pass square channels with smooth and 90° ribbed walls. Han and Zhang [3] studied the effect

  20. The effects of chemical thinning on the alternate bearing of "Golden Delicious" apples in southwestern N. Leon, Mexico

    E-Print Network [OSTI]

    Yanez Reyes, Jesus Noel

    1984-01-01T23:59:59.000Z

    , Marino and Greene (45) reported for 'Early McIntosh' (cultivar with an extreme biennial tendency) that fruit bearing spurs contained more GA activity than vegetative spurs. Gibberellin activity in diffusates of fruits increased from full bloom to abou... the involvement of endogenous gibberellins as inhibitors of flower induction and the effect can be reproduced by the exogenous application of this hormone (41) ~ By applying different GA's, Marino and Greene (45) observed that gibberellins A4+& were more...

  1. Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2014-04-28T23:59:59.000Z

    Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

  2. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. [National Kaohsiung Normal University, Department of Electronic Engineering (China)], E-mail: jhtsai@nknucc.nknu.edu.tw; Chiu, S.-Y.; Lour, W.-S. [National Taiwan Ocean University, Department of Electrical Engineering (China); Guo, D.-F. [Air Force Academy, Department of Electronic Engineering (China)

    2009-07-15T23:59:59.000Z

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  3. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

    2014-04-24T23:59:59.000Z

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  4. Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Li, Z. L.; Wang, X. Q.; Huang, C. C.; Rong, X.; Xu, F. J.; Tang, N.; Qin, Z. X.; Shen, B. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)] [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Sang, L. W.; Sumiya, M. [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)] [Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Chen, Y. H. [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China)] [Laboratory of Semiconductor Material Science, Institute of Semiconductors, CAS, Beijing 100083 (China); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)] [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2013-05-13T23:59:59.000Z

    Intersubband transitions (ISBT) of AlGaN/GaN multiple quantum wells (MQWs) with wavelength towards atmospheric window (3-5 {mu}m) have been investigated. A Ga-excess epitaxial method is used in the molecular beam epitaxy leading to ultra-sharp interface and negligible elements inter-diffusion. The absorption peak wavelength of the ISBT was successfully tuned in the range of 3-4 {mu}m by modifying the GaN well thickness from 2.8 to 5.5 nm. It was further found that the polarization charge density of the AlGaN/GaN MQWs was about -0.034 C/m{sup 2} which gave rise to blueshift of the ISBT wavelength and thus partially compensated its redshift with increasing well thickness.

  5. InGaN/GaN single-quantum-well microdisks

    SciTech Connect (OSTI)

    Hsu, Yu-Chi; Lo, Ikai; Shih, Cheng-Hung; Pang, Wen-Yuan; Hu, Chia-Hsuan; Wang, Ying-Chieh; Chou, Mitch M. C. [Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan (China)

    2012-06-11T23:59:59.000Z

    We have grown In{sub x}Ga{sub 1-x}N/GaN quantum wells atop GaN microdisk with {gamma}-LiAlO{sub 2} substrate by using plasma-assisted molecular beam epitaxy. The structural and optical properties of the samples were analyzed by transmission electron microscopy, x-ray diffraction, cathodoluminescence, and photoluminescence measurements. Based on the measured results, we obtained the indium concentration of the In{sub x}Ga{sub 1-x}N/GaN single quantum well to be x = 0.25 with a band-gap energy of 2.31 eV, which is consistent with the bowing effect of bulk In{sub x}Ga{sub 1-x}N: E{sub g}(x) = [3.42 - x * 2.65 - x * (1 - x) * 2.4] eV.

  6. All passes are available at the RTS Main Office located at 1372 East Main Street and the Sibley Building Lobby. In addition, some passes are available at other locations: Area outlets participating are Rite Aid Pharmacies and Wegmans. All passes are

    E-Print Network [OSTI]

    Portman, Douglas

    are Rite Aid Pharmacies and Wegmans. All passes are available at www.rgrta.com. Express Service to Strong

  7. Atomic layer deposition of GaN using GaCl3 and NH3 Oh Hyun Kim, Dojun Kim, and Tim Andersona

    E-Print Network [OSTI]

    Anderson, Timothy J.

    be grown at lower temperature than by CVD. As example, ALD growth of device quality GaAs, GaP, and InGaP

  8. Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures

    SciTech Connect (OSTI)

    Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

    2014-01-13T23:59:59.000Z

    In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

  9. AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Anaya Calvo, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)] [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom); Stoffels, S.; Marcon, D. [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)] [IMEC, Kapeldreef 75, B3001 Leuven (Belgium)

    2013-11-11T23:59:59.000Z

    AlGaN/GaN heterostructure field effect transistors with a 150?nm thick GaN channel within stacked Al{sub x}Ga{sub 1?x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60?W m{sup ?1} K{sup ?1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.

  10. InGaAsP/InGaP buried heterostructure lasers at 810 nm

    SciTech Connect (OSTI)

    Wakao, K.; Isozumi, S.; Nishi, H.; Ohsaka, S.

    1984-12-01T23:59:59.000Z

    InGaAsP/InGaP buried heterostructure lasers emitting at 810 nm have been grown on GaAs substrates using two-step liquid-phase epitaxy. A threshold current of 79 mA and an external differential quantum efficiency of 26% are obtained. Fundamental transverse mode operation up to 3 mW is achieved in the laser with the active region of 3.5 ..mu..m wide.

  11. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

    2014-04-24T23:59:59.000Z

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  12. Ohmic contacts to n-GaSb

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01T23:59:59.000Z

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  13. The structure of GaAs/Si(211) heteroepitaxial layers

    SciTech Connect (OSTI)

    Liliental-Weber, Z.; Weber, E.R.; Washburn, J.; Liu, T.Y.; Kroemer, H.

    1985-05-01T23:59:59.000Z

    Gallium arsenide films grown on (211)Si by molecular-beam epitaxy have been investigated using transmission electron microscopy. The main defects observed in the alloy were of misfit dislocations, stacking faults, and microtwin lamellas. Silicon surface preparation was found to play an important role on the density of defects formed at the Si/GaAs interface. Two different types of strained-layer superlattices, InGaAs/InGaP and InGaAs/GaAs, were applied either directly to the Si substrate, to a graded layer (GaP-InGaP), or to a GaAs buffer layer to stop the defect propagation into the GaAs films. Applying InGaAs/GaAs instead of InGaAs/InGaP was found to be more effective in blocking defect propagation. In all cases of strained-layer superlattices investigated, dislocation propagation was stopped primarily at the top interface between the superlattice package and GaAs. Graded layers and unstrained AlGaAs/GaAs superlattices did not significantly block dislocations propagating from the interface with Si. Growing of a 50 nm GaAs buffer layer at 505/sup 0/C followed by 10 strained-layer superlattices of InGaAs/GaAs (5 nm each) resulted in the lowest dislocation density in the GaAs layer (approx.5 x 10/sup 7//cm/sup 2/) among the structures investigated. This value is comparable to the recently reported density of dislocations in the GaAs layers grown on (100)Si substrates. Applying three sets of the same strained layers decreased the density of dislocations an additional approx.2 to 3 times.

  14. Over 30{percent} efficient InGaP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Takamoto, T.; Ikeda, E.; Kurita, H. [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan)] [Central Research Laboratory, Japan Energy Corporation, 3-17-35 Niizo-Minami, Toda, Saitama 335 (Japan); Ohmori, M. [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)] [Japan Energy Research Center Company, Ltd., 1-11-9 Azabudai, Minato-ku, Tokyo 106 (Japan)

    1997-01-01T23:59:59.000Z

    A two-terminal monolithic InGaP/GaAs tandem solar cell with a new efficiency record of 30.28{percent} is realized with a practical large area of 4 cm{sup 2} under one-sun air-mass 1.5 global illumination. We report improvements of the tandem cell performance by introducing a double-hetero (hereafter DH) structure InGaP tunnel junction, in which the InGaP layers are surrounded by high band gap AlInP barriers. The DH structure by AlInP barriers increase the peak current of InGaP tunnel junction. The AlInP barrier directly below the InGaP top cell, which takes the part of a back surface field (hereafter BSF) layer, is found to be considerably effective in reflecting minority carriers in the top cell. The AlInP BSF layer does not only form a high potential barrier but also prevents the diffusion of zinc from a high doped tunnel junction toward the top cell during epitaxial growth. Furthermore, an InGaP tunnel junction reduces the absorption loss, which exists in a GaAs tunnel junction, and increases the photogenerated current in the GaAs bottom cell. {copyright} {ital 1997 American Institute of Physics.}

  15. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23T23:59:59.000Z

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  16. Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography

    SciTech Connect (OSTI)

    Hodges, C., E-mail: chris.hodges@bristol.ac.uk; Pomeroy, J.; Kuball, M. [H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)

    2014-02-14T23:59:59.000Z

    We demonstrate the ability of confocal Raman thermography using a spatial filter and azimuthal polarization to probe vertical temperature gradients within the GaN buffer layer of operating AlGaN/GaN high electron mobility transistors. Temperature gradients in the GaN layer are measured by using offset focal planes to minimize the contribution from different regions of the GaN buffer. The measured temperature gradient is in good agreement with a thermal simulation treating the GaN thermal conductivity as homogeneous throughout the layer and including a low thermal conductivity nucleation layer to model the heat flow between the buffer and substrate.

  17. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    with the active thermoelectric cooling implemented on the same material system can improve the device performance, for the pro- posed cooling system should also be based on GaN. To real- ize this, the high-efficiency Ga,6 Great progress has been achieved in GaN-based microwave technology. GaN transistors with very high

  18. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2007-01-01T23:59:59.000Z

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  19. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

    E-Print Network [OSTI]

    The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs 1. Introduction, performance of these devices has been limited by self-heating [1] [6]. Thus, accurate modeling of heat diffusion and self-heating effects in AlGaN/GaN heterostructures and device optimization based

  20. InAsGaPInGaP high-temperature power Schottky rectifier and J. M. Woodall

    E-Print Network [OSTI]

    Woodall, Jerry M.

    °C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion is thought to be due to strong covalent bonding at the InAs/GaP interface. The InAs/GaP heterointerface effectively blocks impurity diffusion. Since InGaP is superior to GaP for high-power applica- tions, as shown

  1. GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

    E-Print Network [OSTI]

    GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer K.M. Groom, B fabrication, is demonstrated. An n-doped InGaP layer is utilised for both electrical and optical confinement-doped InGaP current blocking layer that also provides optical confinement. This tech- nology relies

  2. GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization

    E-Print Network [OSTI]

    Wetzel, Christian M.

    GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical 12180-3590, U.S.A. ABSTRACT The wide bandgap polar semiconductors GaN and ZnO and their related alloys fields, and surface terminations. With a small lattice mismatch of ~1.8 % between GaN and Zn

  3. Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates

    E-Print Network [OSTI]

    Nabben, Reinhard

    Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates: time-resolved photoluminescence, quantum dots, InGaN, Si substrate There exists a strong continuous expensive and are limited in size. Thus, heteroepitaxial growth of GaN on silicon substrates seems

  4. Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    -emitting diodes LEDs on low-defect density bulk GaN substrate, but not in green LEDs on sapphire substrate an ideal substrate for homoepitaxial growth. Here we study the microstructural properties of green GaInN/GaN-Koehler force10 resulting from a macroscopic relaxation of strain. II. CRYSTAL GROWTH c plane bulk GaN substrate

  5. Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    quantum well (QW) light-emitting diodes (LEDs) grown on sapphire and bulk GaN substrate by micro efficiency in dies grown on GaN substrates with a thermal resistance of 75 K/W. For dies on sapphire of GaN-based blue and green LEDs grown on sapphire and GaN substrates using micro-Raman spectroscopy

  6. Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy

    E-Print Network [OSTI]

    Nabben, Reinhard

    . The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate-grown heterostructures can drastically be reduced by using a template of MOVPE-GaN on the sapphire substrate, which leadsCorrelation between structural properties and optical amplification in InGaN/GaN heterostructures

  7. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04T23:59:59.000Z

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  8. Metastable states in InGaN/GaN MQW structures doped with Sm, Eu, and Eu + Sm

    SciTech Connect (OSTI)

    Mezdrogina, M. M., E-mail: Margaret.M@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation); Kozhanova, Yu. V. [St. Petersburg State Polytechnical University (Russian Federation)

    2013-04-15T23:59:59.000Z

    Measurements of the microphotoluminescence (microPL) spectra of InGaN/GaN:Sm and InGaN/GaN:Eu quantum well (QW) structures show that the action of a magnetic field gives rise to Van Vleck paramagnetism for Eu{sup 3+} and Sm{sup 3+}. The macrophotoluminescence (macroPL) spectra recorded after measuring the microPL spectra of InGaN/GaN QW structures doped with Sm or Eu + Sm at a high excitation level (>10{sup 23} photons cm{sup -2} s{sup -1}) in magnetic fields contain no QW emission lines which are present in the macroPL spectra recorded before these microPL measurements. This is indicative of the presence of photoinduced defects. Annealing of the InGaN/GaN:Sm and InGaN/GaN:(Eu + Sm) structures reduces the concentration of photoinduced defects.

  9. Gas-source molecular beam epitaxial growth and characterization of the (Al,In,Ga)NP/GaP material system and Its applications to light-emitting diodes

    E-Print Network [OSTI]

    Odnoblyudov, Vladimir

    2006-01-01T23:59:59.000Z

    on metamorphic growth of InGaP layers on GaP substrates, astemperature amber photoluminescence from InGaP QWs, grownon a metamorphic InGaP layer. References: Fred Shubert E. ,

  10. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06T23:59:59.000Z

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  11. ccsd-00000821(version1):6Nov2003 Alloy effects in Ga1-xInxN/GaN heterostructures

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    ccsd-00000821(version1):6Nov2003 Alloy effects in Ga1-xInxN/GaN heterostructures Duc-Phuong Nguyen, France We show that the large band offsets between GaN and InN and the heavy carrier effec- tive masses preclude the use of the Virtual Crystal Approximation to describe the electronic structure of Ga1-xInxN/GaN

  12. DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS

    E-Print Network [OSTI]

    Honsberg, Christiana

    DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS Omkar Jani1 with a band gap of 2.4 eV or greater. InxGa1-xN is one of a few alloys that can meet this key requirement. InGaN.4 eV. InGaN has the appropriate optical properties and has been well demonstrated for light

  13. AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD

    E-Print Network [OSTI]

    Boyer, Edmond

    AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD R. Meunier1 , A, 38054 Grenoble Cedex 9, France 2 LAAS-CNRS, 7 Avenue du Colonel Roche, 31400 Toulouse, France AlGaN /GaN behavior. Those trapped charges can be associated to the carbon contamination of the AlGaN surface

  14. Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth

    E-Print Network [OSTI]

    Bowers, John

    Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth S for publication 5 January 1999 The emission mechanisms of bulk GaN and InGaN quantum wells QWs were studied suggest that TDs simply reduce the net volume of light-emitting area. This effect is less pronounced in InGaN

  15. Comparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities

    E-Print Network [OSTI]

    Boyer, Edmond

    , transmission and absorption spectra of bulk GaAs, GaN and ZnO microcavities, in order to compareComparison of strong coupling regimes in bulk GaAs, GaN and ZnO semiconductor microcavities SAs and GaN microcavities. PACS numbers: 78.67.-n, 71.36.+c, 78.20.Ci, 78.55.Cr, 78.55.Et Keywords: polariton

  16. Near ultraviolet emission from nonpolar cubic AlxGa1-xN/GaN quantum wells

    E-Print Network [OSTI]

    As, Donat Josef

    molecular beam epitaxy on free standing 3C-SiC 001 substrates. During growth of Al0.15Ga0.85N/GaN quantum growth of the quantum structures an 800 nm thick GaN buffer layer was deposited on the 3C-SiC substrate. The buffer and the c-AlGaN/GaN quantum wells were grown at a substrate temperature of 720 °C. The layers were

  17. Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template

    SciTech Connect (OSTI)

    Wang, Y.D.; Zang, K.Y.; Chua, S.J.; Tripathy, S.; Chen, P.; Fonstad, C.G. [Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2005-12-19T23:59:59.000Z

    We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110 nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

  18. AlGaN/GaN HEMT With 300-GHz fmax

    E-Print Network [OSTI]

    Chung, Jinwook W.

    We report on a gate-recessed AlGaN/GaN high-electron mobility transistor (HEMT) on a SiC substrate with a record power-gain cutoff frequency (f[subscript max]). To achieve this high f[subscript max], we combined a low-damage ...

  19. Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

    E-Print Network [OSTI]

    Piner, Edwin L.

    This letter describes a gate-first AlGaN/GaN high-electron mobility transistor (HEMT) with a W/high-k dielectric gate stack. In this new fabrication technology, the gate stack is deposited before the ohmic contacts, and ...

  20. High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

    E-Print Network [OSTI]

    Hartono, Haryono

    The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. ...

  1. Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors

    E-Print Network [OSTI]

    Lu, Bin

    In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain ...

  2. Investigation of Strain in AlGaN/GaN Multi Quantum Wells by Complementary Techniques

    SciTech Connect (OSTI)

    Devaraju, G.; Sathish, N.; Pathak, A. P. [School of Physics, University of Hyderabad, Central University (P.0), Hyderabad 500 046 (India); Dhamodaran, S. [Department of Physics, Indian Institute of Technology, IIT P O, Kanpur UP 208016 (India); Gaca, J.; Wojcik, M. [Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland); Turos, A. [Institute of Electronic Materials Technology, 01-919 Warsaw, ul. Wolczynska 133 (Poland); Soltan Institute for Nuclear Studies, Swierk/Otwock, Warsaw (Poland); Arora, B. M. [Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai-400 005 (India)

    2009-03-10T23:59:59.000Z

    Al{sub 0.49}Ga{sub 0.51}N(12 nm)/GaN (13 nm) Multi Quantum Wells of 15 periods are grown on sapphire by MOCVD technique. GaN/AlN, each of thickness 200 nm and 20 nm respectively, are used as buffer layers between substrate and epilayer to incorporate the strain in epilayers. It is a well established technique to engineer the band gap in Al{sub x}Ga{sub 1-x}N by adjusting alloy composition. These samples are used in visible and UV light emitters. In the present study, we employ a photoluminescence technique to estimate the composition and luminescence peak positions of AlGaN and GaN. Crystallinity and quality of interfaces have been studied by Rocking curve scan. The Threading Dislocations formed at the GaN buffer layer travel across the entire layers to the surface to form good quality films. Photo-luminescence results show a very sharp GaN peak at 3.4 eV, as observed and reported by others, which shows that samples are free from point defects.

  3. A proposal for a user-level, message passing interface in a distributed memory environment

    SciTech Connect (OSTI)

    Dongarra, J.J. [Tennessee Univ., Knoxville, TN (United States). Dept. of Computer Science]|[Oak Ridge National Lab., TN (United States); Hempel, R. [Gesellschaft fuer Mathematik und Datenverarbeitung mbH Bonn, Sankt Augustin (Germany); Hey, A.J.G. [Southampton Univ. (United Kingdom). Dept. of Electronics and Computer Science; Walker, D.W. [Oak Ridge National Lab., TN (United States)

    1993-02-01T23:59:59.000Z

    This paper describes Message Passing Interface 1 (MPI1), a proposed library interface standard for supporting point-to-point message passing. The intended standard will be provided with Fortran 77 and C interfaces, and will form the basis of a standard high level communication environment featuring collective communication and data distribution transformations. The standard proposed here provides blocking, nonblocking, and synchronized message passing between pairs of processes, with message selectivity by source process and message type. Provision is made for noncontiguous messages. Context control provides a convenient means of avoiding message selectivity conflicts between different phases of an application. The ability to form and manipulate process groups permits task parallelism to be exploited, and is a useful abstraction in controlling certain types of collective communication.

  4. Tests of by-pass diodes at cryogenic temperatures for the KATRIN magnets

    SciTech Connect (OSTI)

    Gil, W. [Karlsruhe Institute of Technology, ITEP, Hermann-von-Helmholtz-Platz 1, D-76344, Eggenstein-Leopoldshafen (Germany); Bolz, H.; Jansen, A.; Müller, K.; Steidl, M. [Karlsruhe Institute of Technology, IKP, Hermann-von-Helmholtz-Platz 1, D-76344, Eggenstein-Leopoldshafen (Germany); Hagedorn, D. [CERN, TE-MPE, 1211 Geneva 23 (Switzerland)

    2014-01-27T23:59:59.000Z

    The Karlsruhe Tritium Neutrino experiment (KATRIN) requires a series of superconducting solenoid magnets for guiding beta-electrons from the source to the detector. By-pass diodes will operate at liquid helium temperatures to protect the superconducting magnets and bus bars in case of quenches. The operation conditions of the by-pass diodes depend on the different magnet systems of KATRIN. Therefore, different diode stacks are designed with adequate copper heat sinks assuming adiabatic conditions. The by-pass diode stacks have been submitted to cold tests both at liquid nitrogen and liquid helium temperatures for checking operation conditions. This report presents the test set up and first results of the diode characteristics at 300 K and 77 K, as well as of endurance tests of the diode stacks at constant current load at 77 K and 4.2 K.

  5. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21T23:59:59.000Z

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(×2.1±1) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  6. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

    1997-05-01T23:59:59.000Z

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  7. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02T23:59:59.000Z

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  8. Tidal hydraulics of San Luis Pass, Texas: a field and numerical investigation

    E-Print Network [OSTI]

    Morton, Scott Jerome

    1980-01-01T23:59:59.000Z

    TIDAL HYDPAULICS OF SAN LUIS PASS, TEXAS: A FIELD AND VBKRICAL INSTIGATION A Thesis by SCOTT JEROME MORTON Submitted to the Graduate College of Texas A(II University in partial fulfillment of the requirement for the degree of MASTER... OF SCIENCE August 1980 i&Iajor Subject: Ocean Engineering TIDAL HyDRAULICS OF SAN LUIS PASS, TEXAS: A FIELD AND M&IERICAL INVESTIGATION A Thesis by SCOTI' JEROIIE MORTON Approved as to style and content by: (C?airman of Committee) (Member) /member...

  9. Survival of Juvenile Chinook Salmon Passing the Bonneville Dam Spillway in 2007

    SciTech Connect (OSTI)

    Ploskey, Gene R.; Weiland, Mark A.; Hughes, James S.; Zimmerman, Shon A.; Durham, Robin E.; Fischer, Eric S.; Kim, Jina; Townsend, R. L.; Skalski, J. R.; Buchanan, Rebecca A.; McComas, Roy L.

    2008-12-01T23:59:59.000Z

    The U.S. Army Corps of Engineers Portland District (CENWP) funds numerous evaluations of fish passage and survival on the Columbia River. In 2007, the CENWP asked Pacific Northwest National Laboratory to conduct an acoustic telemetry study to estimate the survival of juvenile Chinook salmon passing the spillway at Bonneville Dam. This report documents the study results which are intended to be used to improve the conditions juvenile anadromous fish experience when passing through the dams that the Corps operates on the river.

  10. Large internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko, Gerald Hnig, Christian Kindel, Sven Rodt, Andr Strittmatter et al.

    E-Print Network [OSTI]

    Nabben, Reinhard

    Large internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko, Gerald Hönig, Christian transitions in wurtzite InGaN/GaN coupled quantum dot nanowire heterostructures with polarization internal dipole moment in InGaN/GaN quantum dots Irina A. Ostapenko,a Gerald Hönig, Christian Kindel, Sven

  11. Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Guibao Xu, Guan Sun, Yujie J. Ding, Hongping Zhao, Guangyu Liu et al.

    E-Print Network [OSTI]

    Gilchrist, James F.

    Investigation of large Stark shifts in InGaN/GaN multiple quantum wells Guibao Xu, Guan Sun, Yujie overgrowth on residual strain and In incorporation in a-plane InGaN/GaN quantum wells on r- sapphire substrates J. Appl. Phys. 113, 023506 (2013) Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple

  12. Quantum confinement in GaP nanoclusters

    SciTech Connect (OSTI)

    Laurich, B.K.; Smith, D.C.; Healy, M.D.

    1994-06-01T23:59:59.000Z

    We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.

  13. Hybrid: Passing

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative Fuels Data Center Home PageStationGreenhouse GasCalifornia State0Button Stoppedbutton

  14. UID-GaN doping1016 cm-3 2 m 5 m2 m

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    2 µm Drain Silicon UID-GaN ­ doping1016 cm-3 1.1 µm 2 µm GateSource 2 µm 5 µm2 µm AirAir Al0.25GaN ­ doping1015 cm-3 30 nm Drain Silicon UID-GaN P-GaNSource AirAir AlxGaN Drain Silicon UID-GaN GateSource AirAir AlxGaN Gate (a) (b) (c) Drain Silicon UID-GaN P-GaNSource AirAir AlxGaN Gate (d) P-GaN P-GaN 30

  15. Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers

    SciTech Connect (OSTI)

    Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

    2013-05-28T23:59:59.000Z

    Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

  16. Epitaxial GaN films by hyperthermal ion-beam nitridation of Ga droplets

    SciTech Connect (OSTI)

    Gerlach, J. W.; Ivanov, T.; Neumann, L.; Hoeche, Th.; Hirsch, D.; Rauschenbach, B. [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), D-04318 Leipzig (Germany)

    2012-06-01T23:59:59.000Z

    Epitaxial GaN film formation on bare 6H-SiC(0001) substrates via the process of transformation of Ga droplets into a thin GaN film by applying hyperthermal nitrogen ions is investigated. Pre-deposited Ga atoms in well defined amounts form large droplets on the substrate surface which are subsequently nitridated at a substrate temperature of 630 Degree-Sign C by a low-energy nitrogen ion beam from a constricted glow-discharge ion source. The Ga deposition and ion-beam nitridation process steps are monitored in situ by reflection high-energy electron diffraction. Ex situ characterization by x-ray diffraction and reflectivity techniques, Rutherford backscattering spectrometry, and electron microscopy shows that the thickness of the resulting GaN films depends on the various amounts of pre-deposited gallium. The films are epitaxial to the substrate, exhibit a mosaic like, smooth surface topography and consist of coalesced large domains of low defect density. Possible transport mechanisms of reactive nitrogen species during hyperthermal nitridation are discussed and the formation of GaN films by an ion-beam assisted process is explained.

  17. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08T23:59:59.000Z

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  18. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

    1998-01-01T23:59:59.000Z

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  19. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09T23:59:59.000Z

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  20. Amended Notice of Intent for the Northern Pass Transmission Line Project Published in the Federal Register

    Broader source: Energy.gov [DOE]

    The Department of Energy announces its intent to modify the scope of the Northern Pass Transmission Line Project Environmental Impact Statement and to conduct additional public scoping meetings. The Federal Register Notice, which is now available for downloading, includes information on how to submit comments and participate in the additional public scoping meetings.

  1. FRACTAL SHAPED MICROSTRIP COUPLED LINE BAND PASS FILTERS FOR SUPPRESSION OF 2ND

    E-Print Network [OSTI]

    Tentzeris, Manos

    1 FRACTAL SHAPED MICROSTRIP COUPLED LINE BAND PASS FILTERS FOR SUPPRESSION OF 2ND HARMONIC Il Kwon Koch fractal curves are proposed for the first time. These filters are fabricated on Liquid Crystal, the 2nd harmonic of fractal filters can be significantly suppressed through the use of fractal shapes

  2. Lecture 1 Concepts Message passing is the exchange of information between processes

    E-Print Network [OSTI]

    MPI Lecture 1 ­ Concepts · Message passing is the exchange of information between processes 0 1 2 3 code by the use of IF blocks. · Messages contain: o Sending process o Source location o Data type o · Synchronous Sends ­ receiver "beeps" when it has received the message. The receiver must be ready. Like faxes

  3. Bottlenose dolphins of San Luis Pass, Texas: occurrencs patterns, site fidelity, and habitat use

    E-Print Network [OSTI]

    Maze, Katherine Suzanne

    1997-01-01T23:59:59.000Z

    Boat-based photo-identification surveys were conducted during a 12-month (1995-96) study of bottlenose dolphins, Tursiops truncatus, in San Luis Pass/Chocolate Bay, Texas, a relatively undisturbed area located at the southwestern end of Galveston...

  4. BIRD BEHAVIORS IN THE ALTAMONT PASS WIND RESOURCE AREA 8.1 INTRODUCTION

    E-Print Network [OSTI]

    a different view, arguing that intensity of use of the area in a wind farm is unrelated to turbine-caused bird the sampling area. At each plot, two observers performed circular visual scans (360o ), also called variable246 CHAPTER 8 BIRD BEHAVIORS IN THE ALTAMONT PASS WIND RESOURCE AREA 8.1 INTRODUCTION Specific

  5. BIRD MORTALITY IN THE ALTAMONT PASS WIND RESOURCE AREA 3.1 INTRODUCTION

    E-Print Network [OSTI]

    46 CHAPTER 3 BIRD MORTALITY IN THE ALTAMONT PASS WIND RESOURCE AREA 3.1 INTRODUCTION The approximately 5,400 wind turbines operating in the APWRA generate about 580 MW of electricity, but they also estimates in terms of mortality, without regard to local species' populations. Mortality was expressed

  6. Multiple pass and multiple layer friction stir welding and material enhancement processes

    DOE Patents [OSTI]

    Feng, Zhili (Knoxville, TN) [Knoxville, TN; David, Stan A. (Knoxville, TN) [Knoxville, TN; Frederick, David Alan (Harriman, TN) [Harriman, TN

    2010-07-27T23:59:59.000Z

    Processes for friction stir welding, typically for comparatively thick plate materials using multiple passes and multiple layers of a friction stir welding tool. In some embodiments a first portion of a fabrication preform and a second portion of the fabrication preform are placed adjacent to each other to form a joint, and there may be a groove adjacent the joint. The joint is welded and then, where a groove exists, a filler may be disposed in the groove, and the seams between the filler and the first and second portions of the fabrication preform may be friction stir welded. In some embodiments two portions of a fabrication preform are abutted to form a joint, where the joint may, for example, be a lap joint, a bevel joint or a butt joint. In some embodiments a plurality of passes of a friction stir welding tool may be used, with some passes welding from one side of a fabrication preform and other passes welding from the other side of the fabrication preform.

  7. On-Line Measurement and Tuning of Multi-Pass Recirculation Time in the CEBAF Linacs

    E-Print Network [OSTI]

    On-Line Measurement and Tuning of Multi-Pass Recirculation Time in the CEBAF Linacs Michael, USA Abstract CEBAF is a CW, recirculating electron accelerator, us- ing on-crest RF acceleration the beam to drift off-crest with respect to the accelerating fields. Figure 1: Layout of CEBAF Accelerator

  8. New multi-rod linear actuator for direct-drive, wide mechanical band pass

    E-Print Network [OSTI]

    Boyer, Edmond

    (e.g. gears). This mechanical transmission is required in order to adapt the load to a standard motor), · reducing noise, · increasing movement control, · widening the mechanical band pass, · lowering maintenance. For automation applications, such as command (plane command, hard disk harm) or regulation (vibration

  9. One-pass Data Mining Algorithms in a DBMS with UDFs Carlos Ordonez

    E-Print Network [OSTI]

    Ordonez, Carlos

    One-pass Data Mining Algorithms in a DBMS with UDFs Carlos Ordonez University of Houston Houston outside a DBMS, mostly on flat files. In contrast, we present a data mining system that can work on top of a relational DBMS based on a combination of SQL queries and User-Defined Functions (UDFs), debuking the common

  10. Fuel-element failures in Hanford single-pass reactors 1944--1971

    SciTech Connect (OSTI)

    Gydesen, S.P.

    1993-07-01T23:59:59.000Z

    The primary objective of the Hanford Environmental Dose Reconstruction (HEDR) Project is to estimate the radiation dose that individuals could have received as a result of emissions since 1944 from the US Department of Energy`s (DOE) Hanford Site near Richland, Washington. To estimate the doses, the staff of the Source Terms Task use operating information from historical documents to approximate the radioactive emissions. One source of radioactive emissions to the Columbia River came from leaks in the aluminum cladding of the uranium metal fuel elements in single-pass reactors. The purpose of this letter report is to provide photocopies of the documents that recorded these failures. The data from these documents will be used by the Source Terms Task to determine the contribution of single-pass reactor fuel-element failures to the radioactivity of the reactor effluent from 1944 through 1971. Each referenced fuel-element failure occurring in the Hanford single-pass reactors is addressed. The first recorded failure was in 1948, the last in 1970. No records of fuel-element failures were found in documents prior to 1948. Data on the approximately 2000 failures which occurred during the 28 years (1944--1971) of Hanford single-pass reactor operations are provided in this report.

  11. High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

    SciTech Connect (OSTI)

    Koblmueller, G. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Walter Schottky Institut, Technische Universitaet Muenchen, D-85748 Garching (Germany); Chu, R. M.; Raman, A.; Mishra, U. K. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Speck, J. S. [Department of Materials, University of California, Santa Barbara, California 93106 (United States)

    2010-02-15T23:59:59.000Z

    We present combined in situ thermal cleaning and intentional doping strategies near the substrate regrowth interface to produce high-quality AlGaN/GaN high electron mobility transistors on semi-insulating (0001) GaN templates with low interfacial impurity concentrations and low buffer leakage. By exposing the GaN templates to an optimized thermal dissociation step in the plasma-assisted molecular beam epitaxy environment, oxygen, carbon, and, to lesser extent, Si impurities were effectively removed from the regrowth interface under preservation of good interface quality. Residual Si was further compensated by C-doped GaN via CBr{sub 4} to yield highly resistive GaN buffer layers. Improved N-rich growth conditions at high growth temperatures were then utilized for subsequent growth of the AlGaN/GaN device structure, yielding smooth surface morphologies and low residual oxygen concentration with large insensitivity to the (Al+Ga)N flux ratio. Room temperature electron mobilities of the two-dimensional electron gas at the AlGaN/GaN interface exceeded >1750 cm{sup 2}/V s and the dc drain current reached {approx}1.1 A/mm at a +1 V bias, demonstrating the effectiveness of the applied methods.

  12. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01T23:59:59.000Z

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  13. PHYSICAL REVIEW B 85, 045319 (2012) Photoluminescence from In0.5Ga0.5As/GaP quantum dots coupled to photonic crystal cavities

    E-Print Network [OSTI]

    Vuckovic, Jelena

    2012-01-01T23:59:59.000Z

    in materials systems, including InP/InGaP,6­9 InP/GaP,10,11 InP/AlGaInP,12,13 GaInP/GaP,14 InAs/GaP,15 and Al have been observed only in the InP/InGaP and InP/AlGaInP systems. GaP-based materials, by contrastP compared to InGaP is preferable for on-chip frequency downconversion to telecom wavelengths. Recently,17

  14. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States); Yarrison-Rice, Jan [Department of Physics, Miami University, Oxford, OH 45056 (United States); Gao, Qiang; Tan, Hoe; Jagadish, Chennupati [Department of Electronic Materials and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Etheridge, Joanne [Monash Centre for Electron Microscopy, Monash University, Victoria, 3800 (Australia); Wong, Bryan M. [Materials Chemistry Department, Sandia National Laboratories, Livermore, CA 94551 (United States)

    2013-12-04T23:59:59.000Z

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  15. Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

    SciTech Connect (OSTI)

    Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France)] [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)] [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Física, Universidade Federal do Ceará, P.O. Box 6030, Fortaleza–CE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain)] [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Goñi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)] [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)

    2014-01-06T23:59:59.000Z

    The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

  16. Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates

    SciTech Connect (OSTI)

    Kandaswamy, P. K.; Monroy, E. [CEA/CNRS group 'Nanophysique et semiconducteurs', INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Machhadani, H.; Sakr, S.; Tchernycheva, M.; Julien, F. H. [Photis, Institut d'Electronique Fondamentale, Universite Paris-Sud, 91405 Orsay Cedex (France); Bougerol, C. [CEA/CNRS group 'Nanophysique et semiconducteurs', Institut Neel, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)

    2009-10-05T23:59:59.000Z

    We report on the observation of midinfrared intersubband absorption in Si-doped GaN/AlGaN superlattices grown by plasma-assisted molecular-beam epitaxy on semi-insulating GaN-on-Si(111) templates. TM-polarized absorption attributed to transition between the first two electronic levels in the quantum wells peaked in the range from 2 to 9 {mu}m. The relative spectral width remains around 20% in the whole midinfrared spectral range. Doping is predicted to have a large influence on the intersubband absorption energy due to screening of polarization-induced internal electric field.

  17. Langevin and Fokker-Planck analyses of inhibited molecular passing processes controlling transport and reactivity in nanoporous materials

    SciTech Connect (OSTI)

    Wang, Chi-Jen [Ames Laboratory; Ackerman, David M. [Ames Laboratory; Slowing, Igor I. [Ames Laboratory; Evans, James W. [Ames Laboratory

    2014-07-14T23:59:59.000Z

    Inhibited passing of reactant and product molecules within the linear pores of nanoporous catalytic materials strongly reduces reactivity. The dependence of the passing propensity P on pore radius R is analyzed utilizing Langevin dynamics to account for solvent effects. We find that P?(R?Rc)?, where passing is sterically blocked for R?Rc, with ? below the transition state theory value. Deeper insight comes from analysis of the corresponding high-dimensional Fokker-Planck equation, which facilitates an effective small-P approximation, and dimensional reduction enabling utilization of conformal mapping ideas. We analyze passing for spherical molecules and also assess the effect of rotational degrees of freedom for elongated molecules.

  18. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01T23:59:59.000Z

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  19. Degradation mechanisms of GaN high electron mobility transistors

    E-Print Network [OSTI]

    Joh, Jungwoo

    2007-01-01T23:59:59.000Z

    In spite of their extraordinary performance, GaN high electron mobility transistors (HEMT) have still limited reliability. In RF power applications, GaN HEMTs operate at high voltage where good reliability is essential. ...

  20. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgül Okur [Department of Statistics, Giresun University, Giresun (Turkey); Akdemir, Hande Günay; ??can, ?mdat [Department of Mathematics, Giresun University, Giresun (Turkey)

    2014-08-20T23:59:59.000Z

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  1. TEM-Untersuchungen an GaN basierten Halbleiterheterostrukturen fur

    E-Print Network [OSTI]

    Schubart, Christoph

    TEM-Untersuchungen an GaN basierten Halbleiterheterostrukturen f¨ur optoelektronische Anwendungen . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 5.1.2 Versetzungen bei Homoapitaxie auf GaN-Substraten . . . . 79 5.2 Versetzungsreduktion durch

  2. GaN Nanopore Arrays: Fabrication and Characterization

    E-Print Network [OSTI]

    Wang, Yadong

    GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...

  3. Height stabilization of GaSb/GaAs quantum dots by Al-rich capping

    SciTech Connect (OSTI)

    Smakman, E. P., E-mail: e.p.smakman@tue.nl; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven (Netherlands); DeJarld, M.; Martin, A. J.; Millunchick, J. [Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Luengo-Kovac, M.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2014-09-01T23:59:59.000Z

    GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.

  4. 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly ...

  5. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A. [Institute of Physics, NASU, Pr. Nauki 46, Kiev 03028 (Ukraine); Belyaev, A. E. [Institute of Semiconductor Physics, NASU, Pr. Nauki 45, Kiev 03028 (Ukraine); Vitusevich, S. A., E-mail: s.vitusevich@fz-juelich.de; Hardtdegen, H.; Lüth, H. [Peter Grünberg Institute (PGI-8,PGI-9), Forschungszentrum Jülich, Jülich D-52425 (Germany)

    2014-02-17T23:59:59.000Z

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8?×?10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  6. AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications

    E-Print Network [OSTI]

    Seo, Kwang Seok

    AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching 16, 2004; accepted May 10, 2005; published September 8, 2005) We have proposed and fabricated an AlGaN/GaN: GaN, AlGaN, HEMT, switch 1. Introduction GaN has attracted attention for high-power and high

  7. Cubic AlGaN/GaN Hetero-Junction Field-Effect Transistors with Normally-on and Normally-off

    E-Print Network [OSTI]

    As, Donat Josef

    Cubic AlGaN/GaN Hetero-Junction Field-Effect Transistors with Normally-on and Normally-effect transistors (HFETs) in GaN technology. HFET structures were fabricated of non-polar cubic AlGaN/GaN hetero insulation of 3C-SiC was realized by Ar+ implantation before c-AlGaN/GaN growth. HFETs with normally

  8. A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    WE4A-5 A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs Jane J a GaN-based broadband power amplifier using AlGaN/GaN-HEMTs, grown on sapphire substrates amplifier using GaN- HEMTs-on-Sapphire. I INTRODUCTION GaN HEMTs have enormous potential for realizing high

  9. IPAP Conference Series 1: IWN2000, Nov., 2000 1 Morphology Dependent Growth Kinetics of Ga-polar GaN(0001)

    E-Print Network [OSTI]

    Cohen, Philip I.

    IPAP Conference Series 1: IWN2000, Nov., 2000 1 Morphology Dependent Growth Kinetics of Ga-polar GaN, cohen@ece.umn.edu GaN grown on Ga polar GaN templates prepared by metal-organic vapor deposition shows to equilibrium models of the growth. The results indicate that Ga-polar GaN(0001) has a step energy of the order

  10. Engineering of AlGaN-Delta-GaN Quantum-Well Gain Media for Mid-and Deep-Ultraviolet Lasers

    E-Print Network [OSTI]

    Gilchrist, James F.

    Engineering of AlGaN-Delta-GaN Quantum-Well Gain Media for Mid- and Deep-Ultraviolet Lasers Volume.1109/JPHOT.2013.2248705 1943-0655/$31.00 Ó2013 IEEE #12;Engineering of AlGaN-Delta-GaN Quantum-Well Gain@Lehigh.Edu). Abstract: The gain characteristics of AlGaN-delta-GaN quantum wells (QWs) with varying delta-GaN positions

  11. Recent progress in InGaAsSb/GaSb TPV devices

    SciTech Connect (OSTI)

    Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

    1996-05-01T23:59:59.000Z

    AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

  12. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

    2014-09-26T23:59:59.000Z

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  13. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Haj?asz, M., E-mail: m.hajlasz@m2i.nl [Materials innovation institute (M2i), Mekelweg 2, 2628 CD, Delft (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); Gravesteijn, D. J. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Rietveld, F. J. R. [NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen (Netherlands); Schmitz, J. [MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands)

    2014-06-16T23:59:59.000Z

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  14. TEM and HRXRD Analysis of LP MOVPE Grown InGaP/GaAs epilayers

    SciTech Connect (OSTI)

    Pelosi, Claudio; Bosi, Matteo; Attolini, Giovanni; Germini, Fabrizio; Frigeri, Cesare [CNR-IMEM Institute, Parco Area delle Scienze 37a, Loc Fontanini 43010 Parma (Italy); Prutskij, Tatiana [Instituto de Ciencias, BUAP, Privada 17 Norte, no. 3417, colSanMiguel Hueyotlipan, 72050 Puebla, Pue. (Mexico)

    2007-04-10T23:59:59.000Z

    The diffusion phenomena at interfaces between GaAs/InGaP layers grown by low pressure MOVPE have been studied by dark field (DF) transmission Electron Microscopy (TEM) and High resolution X-ray Diffractometry (HRXRD). By comparing the results of the two techniques a mismatched layer containing P or P and In has been evidenced. The causes of this behavior are briefly discussed.

  15. Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes

    E-Print Network [OSTI]

    Cornelius S. Bausch; Aune Koitmäe; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

    2013-05-06T23:59:59.000Z

    We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

  16. InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening

    SciTech Connect (OSTI)

    Glauser, Marlene; Mounir, Christian; Rossbach, Georg; Feltin, Eric; Carlin, Jean-François; Butté, Raphaël; Grandjean, Nicolas [École Polytechnique Fédérale de Lausanne (EPFL), Institute of Condensed Matter Physics, CH-1015 Lausanne (Switzerland)

    2014-06-21T23:59:59.000Z

    Contrary to the case of III-nitride based visible light-emitting diodes for which the inhomogeneous linewidth broadening characteristic of InGaN-based multiple quantum well (MQW) heterostructures does not appear as a detrimental parameter, such a broadening issue can prevent a microcavity (MC) system entering into the strong light-matter coupling regime (SCR). The impact of excitonic disorder in low indium content (x???0.1) In{sub x}Ga{sub 1–x}N/GaN MQW active regions is therefore investigated for the subsequent realization of polariton laser diodes by considering both simulations and optical characterizations. It allows deriving the requirements for such MQWs in terms of absorption, emission linewidth, and Stokes shift. Systematic absorption-like and photoluminescence (PL) spectroscopy experiments are performed on single and multiple In{sub 0.1}Ga{sub 0.9}N/GaN quantum wells (QWs). Micro-PL mappings reveal a low temperature PL linewidth of ?30?meV, compatible with SCR requirements, for single QWs for which the microscopic origin responsible for this broadening is qualitatively discussed. When stacking several InGaN/GaN QWs, a departure from such a narrow linewidth value and an increase in the Stokes shift are observed. Various possible reasons for this degradation such as inhomogeneous built-in field distribution among the QWs are then identified. An alternative solution for the MC design to achieve the SCR with the InGaN alloy is briefly discussed.

  17. Rapid Communications Strong piezoelectricity in individual GaN nanowires

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    Rapid Communications Strong piezoelectricity in individual GaN nanowires Majid Minary@northwestern.edu (Received 12 July 2011; accepted 15 September 2011) Abstract GaN nanowires are promising building blocks piezoelectricity in individual single-crystal GaN nanowires revealed by direct measurement of the piezoelectric

  18. GaN Radiation Detectors for Particle Physics and

    E-Print Network [OSTI]

    Glasgow, University of

    GaN Radiation Detectors for Particle Physics and Synchrotron Applications James Paul Grant and monitoring applications. Gallium nitride (GaN) was investigated as a radiation hard particle detector diameter on three epitaxial GaN wafers grown on a sapphire sub- strate. Two of the wafers were obtained

  19. New Faces of GaN: Growth, Doping and Devices

    E-Print Network [OSTI]

    California at Santa Barbara, University of

    New Faces of GaN: Growth, Doping and Devices James S. Speck Materials Department University of California Santa Barbara, CA LEO of a-GaN from circular opening Engineering Insights 2006 #12;#12;Personnel. Wraback (ARL) $$$ JST ­ ERATO UCSB SSLDC AFOSR ONR #12;Reversed direction of polarization Bulk GaN

  20. Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

    SciTech Connect (OSTI)

    Perez-Tomas, A.; Fontsere, A.; Llobet, J. [IMB-CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, CAT (Spain); Placidi, M. [IREC, Jardins Dones de Negre 1, 08930 Sant Adria de Besos, Barcelona (Spain); Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Baron, N. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); PICOGIGA International, Pl M. Rebuffat, Courtaboeuf 7, 91140 Villejust (France)

    2013-05-07T23:59:59.000Z

    The vertical bulk (drain-bulk) current (I{sub db}) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I{sub db} (25-300 Degree-Sign C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E{sub a}), the (soft or destructive) vertical breakdown voltage (V{sub B}), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E{sub a} = 0.35 eV at T = 25-300 Degree-Sign C; V{sub B} = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E{sub a} = 2.5 eV at T > 265 Degree-Sign C; V{sub B} > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E{sub a} = 0.35 eV at T > 150 Degree-Sign C; V{sub B} = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

  1. A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+

    E-Print Network [OSTI]

    McKittrick, Joanna

    A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

  2. Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

    E-Print Network [OSTI]

    improve the room-temperature carrier mobility in wurtzite AlN/GaN/AlN heterostructures, which is limited consider a narrow groove made of InxGa1-xN with small In content x inside a wurtzite AlN/GaN/AlN heteroN 2 nm /GaN 3 nm /AlN 3 nm . A well-known feature of wurtzite heterostructures is a strong buit

  3. Growth of GaN on porous SiC and GaN substrates C. K. Inoki1

    E-Print Network [OSTI]

    Feenstra, Randall

    1 Growth of GaN on porous SiC and GaN substrates C. K. Inoki1 , T. S. Kuan1 , Ashutosh Sagar2 , C, Albuquerque, NM 87185 4 Beckman Institute, University of Illinois, Urbana, IL 61801 GaN films were grown on porous SiC and GaN templates using both plasma-assisted molecular beam epitaxy (PAMBE) and metal

  4. Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer

    E-Print Network [OSTI]

    Ozbay, Ekmel

    N buffer layer BL grown on an Al2O3 substrate and an AlN IL grown under the AlGaN ternary layer TL. In the present study, we investigate the effects of an AlN BL on an Al2O3 substrate and an AlN IL between an AlGaNStructural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer

  5. Heat Transfer in Smooth and Ribbed Rectangular Two-Pass Channels with a Developing Flow Entrance at High Rotation Numbers

    E-Print Network [OSTI]

    Huh, Michael

    2010-01-16T23:59:59.000Z

    on the first pass trailing surface of both aspect ratio channels. The leading surface in ribbed channels has shown a dramatic decrease in heat transfer with rotation in the first pass. Reductions in heat transfer by as much as 50% were observed. In the second...

  6. A dual-pass variational data assimilation framework for estimating soil moisture profiles from AMSR-E microwave

    E-Print Network [OSTI]

    influences the partitioning of surface available energy into sensible and latent heat fluxes and henceA dual-pass variational data assimilation framework for estimating soil moisture profiles from AMSR, we have designed a dual-pass assimilation (DP-En4DVar) framework to optimize the model state

  7. MnPASS System Study Phase 2 Prepared for the Minnesota Department of Transportation by Cambridge Systematics, Inc. with SRF

    E-Print Network [OSTI]

    Minnesota, University of

    will be put in place during construction The Next Opportunity See Cayuga Project materials at: http://www.dot.state.mn.us/metro/projects/cayuga/indexPASS onto the Twin City Highway System · Identified a potential MnPASS system ­ Studied cost, operational provide increased trip reliability and user choice in a cost-effective manner (I-394) ­ New lower cost

  8. From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure

    SciTech Connect (OSTI)

    Fisichella, G. [CNR-IMM, Strada VIII, 5, 95121 Catania (Italy); Department of Electronic Engineering, University of Catania, 95124 Catania (Italy); Greco, G.; Roccaforte, F.; Giannazzo, F. [CNR-IMM, Strada VIII, 5, 95121 Catania (Italy)

    2014-08-11T23:59:59.000Z

    The electrical behaviour of graphene (Gr) contacts to Al{sub x}Ga{sub 1?x}N/GaN heterostructures has been investigated, focusing, in particular, on the impact of the AlGaN microstructure on the current transport at Gr/AlGaN interface. Two Al{sub 0.25}Ga{sub 0.75}N/GaN heterostructures with very different quality in terms of surface roughness and defectivity, as evaluated by atomic force microscopy (AFM) and transmission electron microscopy, were compared in this study, i.e., a uniform and defect-free sample and a sample with a high density of typical V-defects, which locally cause a reduction of the AlGaN thickness. Nanoscale resolution current voltage (I-V) measurements by an Au coated conductive AFM tip were carried out at several positions both on the bare and Gr-coated AlGaN surfaces. Rectifying contacts were found onto both bare AlGaN surfaces, but with a more inhomogeneous and lower Schottky barrier height (?{sub B}???0.6?eV) for AlGaN with V-defects, with respect to the case of the uniform AlGaN (?{sub B}???0.9?eV). Instead, very different electrical behaviours were observed in the presence of the Gr interlayer between the Au tip and AlGaN, i.e., a Schottky contact with reduced barrier height (?{sub B} ? 0.4?eV) for the uniform AlGaN and an Ohmic contact for the AlGaN with V-defects. Interestingly, excellent lateral uniformity of the local I-V characteristics was found in both cases and can be ascribed to an averaging effect of the Gr electrode over the AlGaN interfacial inhomogeneities. Due to the locally reduced AlGaN layer thickness, V defect act as preferential current paths from Gr to the 2DEG and can account for the peculiar Ohmic behaviour of Gr contacts on defective AlGaN.

  9. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01T23:59:59.000Z

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  10. X-ray diffraction analysis of InGaP/GaAs heterointerfaces grown by metalorganic chemical vapor deposition

    SciTech Connect (OSTI)

    Nittono, T.; Hyuga, F. [NTT System Electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-01 (Japan)] [NTT System Electronics Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-01 (Japan)

    1997-03-01T23:59:59.000Z

    InGaP/GaAs heterointerfaces grown by metalorganic chemical vapor deposition have been characterized by a high-resolution x-ray diffraction analysis of multiple quantum well structures. The flow of AsH{sub 3} to InGaP surface produces an InGaAs-like interfacial layer at the GaAs-on-InGaP interface, indicating P atoms of the InGaP surface are easily replaced by As atoms. The flow of PH{sub 3} to GaAs surface, on the other hand, does not make any detectable interfacial layer, indicating that almost no As atoms of the GaAs surface are replaced by P atoms. It is also found that the flow of trimethylgallium (TMG) to the InGaP surface produces a GaP-like interfacial layer. This interfacial layer is probably formed by the reaction between TMG and excessive P atoms on the InGaP surface or residual PH{sub 3} in the growth chamber. {copyright} {ital 1997 American Institute of Physics.}

  11. Physica B 376377 (2006) 486490 Preferential substitution of Fe on physically equivalent Ga sites in GaN

    E-Print Network [OSTI]

    Nabben, Reinhard

    2006-01-01T23:59:59.000Z

    in GaN W. GehlhoffÃ, D. Azamat1 , U. Haboeck, A. Hoffmann Institute for Solid State Physics, Technical freestanding hydride vapor phase grown GaN have been studied in the X- and Q-band. A complex resonance pattern with C3v symmetry in the wurtzite structure of GaN. Aside from the displacement of their magnetic axis

  12. Superluminescence in Green Emission GaInN/GaN Quantum Well Structures under Pulsed Laser Excitation

    E-Print Network [OSTI]

    Wetzel, Christian M.

    and bulk GaN substrates, respectively. Under intense pulsed photo excitation, we observed strong the same excitation conditions, the blue shift for the m-axis grown structure on bulk GaN substrate is less-plane sapphire substrate and along the non-polar m-axis on m-plane bulk GaN substrate. The frequently used

  13. Feasibility of Tidal and Ocean Current Energy in False Pass, Aleutian Islands, Alaska FINAL REPORT

    SciTech Connect (OSTI)

    Wright, Bruce Albert [Aleutian Pribilof Islands Association] [Aleutian Pribilof Islands Association

    2014-05-07T23:59:59.000Z

    The Aleutian Pribilof Islands Association was awarded a U.S. Department of Energy Tribal Energy Program grant (DE-EE0005624) for the Feasibility of Tidal and Ocean Current Energy in False Pass, Aleutian Islands, Alaska (Project). The goal of the Project was to perform a feasibility study to determine if a tidal energy project would be a viable means to generate electricity and heat to meet long-term fossil fuel use reduction goals, specifically to produce at least 30% of the electrical and heating needs of the tribally-owned buildings in False Pass. The Project Team included the Aleut Region organizations comprised of the Aleutian Pribilof Island Association (APIA), and Aleutian Pribilof Island Community Development Association (APICDA); the University of Alaska Anchorage, ORPC Alaska a wholly-owned subsidiary of Ocean Renewable Power Company (ORPC), City of False Pass, Benthic GeoScience, and the National Renewable Energy Laboratory (NREL). The following Project objectives were completed: collected existing bathymetric, tidal, and ocean current data to develop a basic model of current circulation at False Pass, measured current velocities at two sites for a full lunar cycle to establish the viability of the current resource, collected data on transmission infrastructure, electrical loads, and electrical generation at False Pass, performed economic analysis based on current costs of energy and amount of energy anticipated from and costs associated with the tidal energy project conceptual design and scoped environmental issues. Utilizing circulation modeling, the Project Team identified two target sites with strong potential for robust tidal energy resources in Isanotski Strait and another nearer the City of False Pass. In addition, the Project Team completed a survey of the electrical infrastructure, which identified likely sites of interconnection and clarified required transmission distances from the tidal energy resources. Based on resource and electrical data, the Project Team developed a conceptual tidal energy project design utilizing ORPC’s TidGen® Power System. While the Project Team has not committed to ORPC technology for future development of a False Pass project, this conceptual design was critical to informing the Project’s economic analysis. The results showed that power from a tidal energy project could be provided to the City of False at a rate at or below the cost of diesel generated electricity and sold to commercial customers at rates competitive with current market rates, providing a stable, flat priced, environmentally sound alternative to the diesel generation currently utilized for energy in the community. The Project Team concluded that with additional grants and private investment a tidal energy project at False Pass is well-positioned to be the first tidal energy project to be developed in Alaska, and the first tidal energy project to be interconnected to an isolated micro grid in the world. A viable project will be a model for similar projects in coastal Alaska.

  14. Survival and Passage of Juvenile Chinook Salmon and Steelhead Passing through Bonneville Dam, 2011

    SciTech Connect (OSTI)

    Ploskey, Gene R. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Batten, G. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Cushing, Aaron W. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Kim, Jin A. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Johnson, Gary E. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Skalski, J. R. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Townsend, Richard L. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Seaburg, Adam [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Weiland, Mark A. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Woodley, Christa M. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Hughes, James S. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Carlson, Thomas J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Carpenter, Scott M. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Deng, Zhiqun [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Etherington, D. J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Fischer, Eric S. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Fu, Tao [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Greiner, Michael J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Hennen, Matthew J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Martinez, Jayson J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Mitchell, T. D. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Rayamajhi, Bishes [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Zimmerman, Shon A. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2013-02-15T23:59:59.000Z

    Pacific Northwest National Laboratory (PNNL) and subcontractors conducted an acoustic-telemetry study of juvenile salmonid fish passage and survival at Bonneville Dam in 2011. The study was conducted to assess the readiness of the monitoring system for official compliance studies under the 2008 Biological Opinion and Fish Accords and to assess performance measures including route-specific fish passage proportions, travel times, and survival based upon a virtual/paired-release model. The study relied on releases of live Juvenile Salmon Acoustic Telemetry System tagged smolts in the Columbia River and used acoustic telemetry to evaluate the approach, passage, and survival of passing juvenile salmon using a virtual release, paired reference release survival model. This study supports the U.S. Army Corps of Engineers’ continual effort to improve conditions for juvenile anadromous fish passing through Columbia River dams.

  15. Survival and Passage of Juvenile Chinook Salmon and Steelhead Passing through Bonneville Dam, 2010

    SciTech Connect (OSTI)

    Ploskey, Gene R.; Weiland, Mark A.; Hughes, James S.; Woodley, Christa M.; Deng, Zhiqun; Carlson, Thomas J.; Kim, Jin A.; Royer, Ida M.; Batten, George W.; Cushing, Aaron W.; Carpenter, Scott M.; Etherington, D. J.; Faber, Derrek M.; Fischer, Eric S.; Fu, Tao; Hennen, Matthew J.; Mitchell, Tyler; Monter, Tyrell J.; Skalski, John R.; Townsend, Richard L.; Zimmerman, Shon A.

    2011-12-01T23:59:59.000Z

    Pacific Northwest National Laboratory (PNNL) and subcontractors conducted an acoustic-telemetry study of juvenile salmonid fish passage and survival at Bonneville Dam in 2010. The study was conducted to assess the readiness of the monitoring system for official compliance studies under the 2008 Biological Opinion and Fish Accords and to assess performance measures including route-specific fish passage proportions, travel times, and survival based upon a single-release model. This also was the last year of evaluation of effects of a behavioral guidance device installed in the Powerhouse 2 forebay. The study relied on releases of live Juvenile Salmon Acoustic Telemetry System tagged smolts in the Columbia River and used acoustic telemetry to evaluate the approach, passage, and survival of passing juvenile salmon. This study supports the U.S. Army Corps of Engineers continual effort to improve conditions for juvenile anadromous fish passing through Columbia River dams.

  16. Survival and Passage of Juvenile Chinook Salmon and Steelhead Passing Through Bonneville Dam, 2010

    SciTech Connect (OSTI)

    Ploskey, Gene R.; Weiland, Mark A.; Hughes, James S.; Woodley, Christa M.; Deng, Zhiqun; Carlson, Thomas J.; Kim, Jin A.; Royer, Ida M.; Batten, George W.; Cushing, Aaron W.; Carpenter, Scott M.; Etherington, D. J.; Faber, Derrek M.; Fischer, Eric S.; Fu, Tao; Hennen, Matthew J.; Mitchell, T. D.; Monter, Tyrell J.; Skalski, J. R.; Townsend, Richard L.; Zimmerman, Shon A.

    2012-09-01T23:59:59.000Z

    Pacific Northwest National Laboratory (PNNL) and subcontractors conducted an acoustic-telemetry study of juvenile salmonid fish passage and survival at Bonneville Dam in 2010. The study was conducted to assess the readiness of the monitoring system for official compliance studies under the 2008 Biological Opinion and Fish Accords and to assess performance measures including route-specific fish passage proportions, travel times, and survival based upon a single-release model. This also was the last year of evaluation of effects of a behavioral guidance device installed in the Powerhouse 2 forebay. The study relied on releases of live Juvenile Salmon Acoustic Telemetry System tagged smolts in the Columbia River and used acoustic telemetry to evaluate the approach, passage, and survival of passing juvenile salmon. This study supports the U.S. Army Corps of Engineers continual effort to improve conditions for juvenile anadromous fish passing through Columbia River dams.

  17. First measurement of electron temperature from signal ratios in a double-pass Thomson scattering system

    SciTech Connect (OSTI)

    Tojo, H.; Itami, K.; Hatae, T. [Japan Atomic Energy Agency, 801-1 Mukoyama, Naka 311-0193 (Japan); Ejiri, A.; Yamaguchi, T.; Takase, Y. [Graduate School of Frontier Sciences, University of Tokyo, Kashiwa 277-8561 (Japan); Hiratsuka, J. [Graduate School of Science, University of Tokyo, Tokyo 113-0033 (Japan)

    2012-02-15T23:59:59.000Z

    This paper presents an experimental demonstration to determine electron temperature (T{sub e}) with unknown spectral sensitivity (transmissivity) in a Thomson scattering system. In this method, a double-pass scattering configuration is used and the scattered lights from each pass (with different scattering angles) are measured separately. T{sub e} can be determined from the ratio of the signal intensities without knowing a real chromatic dependence in the sensitivity. Note that the wavelength range for each spectral channel must be known. This method was applied to the TST-2 Thomson scattering system. As a result, T{sub e} measured from the ratio (T{sub e,r}) and T{sub e} measured from a standard method (T{sub e,s}) showed a good agreement with <|T{sub e,r}-T{sub e,s}|/T{sub e,s}>= 7.3%.

  18. Development of polarization-controlled multi-pass Thomson scattering system in the GAMMA 10 tandem mirror

    SciTech Connect (OSTI)

    Yoshikawa, M.; Morimoto, M.; Shima, Y.; Kohagura, J.; Sakamoto, M.; Nakashima, Y.; Imai, T. [Plasma Research Center, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan); Yasuhara, R.; Yamada, I.; Kawahata, K.; Funaba, H. [National Institute for Fusion Science, 322-6 Oroshi-cho, Toki, Gifu 509-5292 (Japan); Minami, T. [Institute of Advanced Energy, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan)

    2012-10-15T23:59:59.000Z

    In the GAMMA 10 tandem mirror, the typical electron density is comparable to that of the peripheral plasma of torus-type fusion devices. Therefore, an effective method to increase Thomson scattering (TS) signals is required in order to improve signal quality. In GAMMA 10, the yttrium-aluminum-garnet (YAG)-TS system comprises a laser, incident optics, light collection optics, signal detection electronics, and a data recording system. We have been developing a multi-pass TS method for a polarization-based system based on the GAMMA 10 YAG TS. To evaluate the effectiveness of the polarization-based configuration, the multi-pass system was installed in the GAMMA 10 YAG-TS system, which is capable of double-pass scattering. We carried out a Rayleigh scattering experiment and applied this double-pass scattering system to the GAMMA 10 plasma. The integrated scattering signal was made about twice as large by the double-pass system.

  19. Composition and Interface Analysis of InGaN/GaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography

    SciTech Connect (OSTI)

    Liu, Fang; Huang, Li; Davis, Robert F.; Porter, Lisa M.; Schreiber, Daniel K.; Kuchibhatla, S. V. N. T.; Shutthanandan, V.; Thevuthasan, Suntharampillai; Preble, Edward; Paskova, Tanya; Evans, K. R.

    2014-09-04T23:59:59.000Z

    In0.20Ga0.80N/GaN multi-quantum wells grown on [0001]-oriented GaN substrates with and without an InGaN buffer layer were characterized using three-dimensional atom probe tomography. In all samples, the upper interfaces of the QWs were slightly more diffuse than the lower interfaces. The buffer layers did not affect the roughness of the interfaces within the quantum well structure, a result attributed to planarization of the surface of the 1st GaN barrier layer which had an average root-mean-square roughness of 0.177 nm. The In and Ga distributions within the MQWs followed the expected distributions for a random alloy with no indications of In clustering.

  20. Point defect balance in epitaxial GaSb

    SciTech Connect (OSTI)

    Segercrantz, N., E-mail: natalie.segercrantz@aalto.fi; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FIN-00076 Aalto Espoo (Finland); Song, Y.; Wang, S. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Göteborg (Sweden); State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 865 Changning Road, Shanghai 200050 (China)

    2014-08-25T23:59:59.000Z

    Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

  1. Emittance Reduction between EBIS LINAC and Booster by Electron Beam Cooling; Is Single Pass Cooling Possible?

    SciTech Connect (OSTI)

    Hershcovitch,A.

    2008-04-01T23:59:59.000Z

    Electron beam cooling is examined as an option to reduce momentum of gold ions exiting the EBIS LINAC before injection into the booster. Electron beam parameters are based on experimental data (obtained at BNL) of electron beams extracted from a plasma cathode. Preliminary calculations indicate that single pass cooling is feasible; momentum spread can be reduced by more than an order of magnitude in less than one meter.

  2. Reclamation of Cleaning Water Using Ultrafiltration and Double Pass Reverse Osmosis

    E-Print Network [OSTI]

    Neuman, T.; Long, G.; Tinter, M.

    RECLAMATION OF CLEANING WATER USING ULTRAFll...TRATION AND DOUBLE PASS REVERSE OSMOSIS Tom Neuman Gary Long Maura Tinter PPG Industries, Inc., Cleveland, Ohio ABSTRACT In the production of electrodeposition primers, water is used.... Because of the commitment to minimize process generated wastes, an integrated ultrafiltration (UF) and reverse osmosis (RO) system was installed to reclaim the cleaning water at the PPG Industries, Inc. (PPG) Cleveland, Ohio plant. The recovered water...

  3. Development of engineering geologic performance standards for land-use regulation in Sabine Pass, Texas

    E-Print Network [OSTI]

    Vaught, Richmond Murphy

    1982-01-01T23:59:59.000Z

    and a prograding mudflat was formed (Carter, 1980) (Figure 9). Hydrogeology The Sabine Pass chenier ridges form an unconfined aquifer which consists of a fresh water lens overlying saltwater due to density dif- ferences (Figure 10). Recharge... supply or low wave energy results in progradation of shoreline. 2) Period of low sediment supply or higher wave energy sands are sorted and built into beaches and dunes. 3) Return to large sediment supply or low wave energy results in a new period...

  4. Detailed heat transfer distributions in two-pass smooth and turbulated square channels with bleed holes

    SciTech Connect (OSTI)

    Ekkad, S.V.; Huang, Y.; Han, J.C. [Texas A and M Univ., College Station, TX (United States)

    1996-12-31T23:59:59.000Z

    Modern gas turbine blades have internal serpentine passage for providing effective cooling. Rib turbulators are added periodically on the cooling passage surface to enhance heat transfer. Some of the cooling air is ejected out through bleed (or film) holes for external blade film cooling. The presence of periodic rib turbulators and bleed holes creates strong axial and spanwise variations in the heat transfer distributions on the passage surface. Detailed heat transfer coefficient distributions are presented in this study for a two-pass square channel with a 180{degree} turn. One wall of the channel has periodically placed bleed holes. Four different configurations of 90{degree} parallel, 60{degree} parallel, 60{degree} V ribs, and 60{degree} inverted V ribs are studied in conjunction with the effect of bleed holes on the same wall. The surface is coated with a thin layer of thermochromic liquid crystals and a transient test is run to obtain the detailed heat transfer distributions. The 60{degree} parallel, 60{degree} V, and 60{degree} inverted ribbed channels produce similar levels of heat transfer enhancement in the first pass. However, the 60{degree} inverted V ribbed channel produces higher enhancement in the second pass. Regional averaged heat transfer results indicate that a test surface with bleed holes provides similar heat transfer enhancement as that for a test surface without bleed holes although 20--25% of the inlet mass flow exits through the bleed holes.

  5. Tradeoffs for Efficiently Passing Juvenile Salmonids through Bonneville Dam on the Lower Columbia River

    SciTech Connect (OSTI)

    Ploskey, Gene R.; Weiland, Mark A.; Kim, Jina

    2008-12-01T23:59:59.000Z

    We analyzed five years of route-specific fish-passage data acquired by fixed-aspect hydroacoustic sampling of juvenile salmonids passing downstream through Bonneville Dam. High passage effectiveness of surface-flow outlets relative to the spillway and turbines suggests that juvenile salmonids are preferentially selecting surface outlets over adjacent turbines. Seasonal estimates showed that median combined effectiveness of surface-flow outlets (7.8) was 7.1 times higher than that of the spillway (1.1) and 9.8 times higher than that of turbines (0.8). Islands prevent the spillway from attracting fish from either powerhouse, something that may occur at other projects. Regressions indicated that percent flow passing a specific route explained from 50 to 97% of fish-passage variation, and relations were useful for evaluating fish-passage alternatives. Fitted curves for surface-passage routes, including the sluiceway at Powerhouse 1 (B1) and Powerhouse 2 (B2) were much steeper at low percent low (2-15%) than were curves for the spillway or turbines. Regressions indicate that increasing surface-flow percentages of B1 flow from 1% to 10% could increase B1 sluiceway-passage efficiency from 40% to 83%. Increasing B2 flow to the B2 sluiceway from 4% to 15% could increase fish passage from 31% to 62%. Without spill, about 50% of fish passed by non-turbine routes.

  6. Room-temperature cw operation of InGaAsP/InGaP lasers at 727 nm grown on GaAs substrates by liquid phase epitaxy

    SciTech Connect (OSTI)

    Wakao, K.; Nishi, H.; Kusunoki, T.; Isozumi, S.; Ohsaka, S.

    1984-06-01T23:59:59.000Z

    InGaAsP/InGaP lasers emitting at 724--727 nm have been fabricated on GaAs substrates using liquid phase epitaxy. The threshold current is reduced to 8 kA/cm/sup 2/ by thinning the active layer. Room-temperature cw operation is achieved for the first time in the lasing wavelength range below 760 nm in this quaternary system.

  7. Self-assembled In0.5Ga0.5As quantum dots on GaP Yuncheng Song,a

    E-Print Network [OSTI]

    Haller, Gary L.

    SAQDs . Several groups have investigated the growth of both InP and In-rich InGaP SAQDs on GaP.7­12 Most temperature operation of vis- ible light emitting diodes LEDs using InP/GaP and InGaP/ GaP SAQDs, respectively

  8. Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns

    E-Print Network [OSTI]

    Jahns, Jürgen

    Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J spreading in a mesa-structure GaN-based LED grown on an insulating or semi-insulating substrate. (b. Jahns Current crowding in mesa-structure GaInN/GaN light-emitting diodes (LEDs) grown on insulating

  9. Gas-source molecular beam epitaxial growth and characterization of the (Al,In,Ga)NP/GaP material system and Its applications to light-emitting diodes

    E-Print Network [OSTI]

    Odnoblyudov, Vladimir

    2006-01-01T23:59:59.000Z

    ? G, Kcal/mol GaP GaN AlN o Substrate temperature, C Figurenm-thick GaN 0.006 P 0.994 layer on substrate temperature.substrate temperature for Reactions formation of AlP, GaP, GaN and

  10. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 51, NO. 2, FEBRUARY 2003 653 AlGaN/GaN HFET Power Amplifier Integrated With

    E-Print Network [OSTI]

    Itoh, Tatsuo

    the first demonstration of a GaN-based HFET was done on a sapphire substrate in 1993 [1]­[3]. This is due crystal quality compared to that of the sapphire substrate. Thanks to steadfast progress in AlGaN/GaN HFETIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 51, NO. 2, FEBRUARY 2003 653 AlGaN/GaN

  11. Tunable THz plasmon resonances in InGaAs/InP HEMT R. E. Peale*a

    E-Print Network [OSTI]

    Peale, Robert E.

    , high ns, and small m*. A variety of materials systems such as GaAs/AlGaAs [3], InGaP/InGaAs/GaAs [4

  12. Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    fabricated on freestanding GaN substrates T. Koyama and T.on freestanding m-plane GaN substrates. Although the ? inton the freestanding GaN substrate. cause the current was

  13. Prolactin messenger ribonucleic acid levels, prolactin synthesis, and radioimmunoassayable prolactin during the estrous cycle in the Golden Syrian hamster

    SciTech Connect (OSTI)

    Massa, J.S. (Univ. of Iowa, Iowa City (USA)); Blask, D.E. (Univ. of Arizona, Tucson (USA))

    1990-01-01T23:59:59.000Z

    The purpose of this study was to observe the molecular dynamics of pituitary prolactin (PRL) gene expression during the estrous cycle of the Golden Syrian hamster. PRL messenger ribonucleic acid (mRNA) levels, PRL synthesis were measured in the morning on each day of the cycle. We observed that all of these PRL indices declined or did not change from Day 2 to Day 3 of the cycle. From Day 3 to Day 4 however, PRL mRNA levels increased 33-38% and media {sup 3}H-PRL increased 32-42%, while there were no significant changes in pituitary {sup 3}H-PRL, or RIA-PRL in the media or pituitary. From Day 4 to Day 1 (estrus) there was reciprocal change in the levels of {sup 3}H-PRL in the pituitary vs. the media, with the former increasing 37-50% and the latter decreasing 25-32%. Pituitary RIA-PRL did also increased 45-64% from Day 4 to Day 1 while media RIA-PRL did not change. These data are consistent with the following hypothesis: On the morning of proestrus(Day 4) in the hamster, PRL mRNA levels are elevated compared to those on Day 3, signaling an increase in PRL synthesis. This newly synthesized PRL is shunted into a readily releasable pool on the morning of Day 4 (contributing to the afternoon surge of serum PRL), and into a preferentially stored pool by the morning of Day 1.

  14. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12T23:59:59.000Z

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  15. Influence of Ga content on the structure and anomalous Hall effect of Fe{sub 1?x}Ga{sub x} thin films on GaSb(100)

    SciTech Connect (OSTI)

    Anh Tuan, Duong; Shin, Yooleemi; Viet Cuong, Tran; Cho, Sunglae, E-mail: slcho@ulsan.ac.kr [Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Phan, The-Long [Department of Physics, Chungbuk National University, Cheongju 361-763 (Korea, Republic of)

    2014-05-07T23:59:59.000Z

    The Fe{sub 1?x}Ga{sub x} thin films (x?=?0.4, 0.5) have been grown on GaSb(100) substrate using molecular beam epitaxy. An epitaxial film with bcc ?-Fe crystal structure (A2) is observed in Fe{sub 0.6}Ga{sub 0.4} film, while an impure Fe{sub 3}Ga phase with DO{sub 3} structure is appeared in Fe{sub 0.5}Ga{sub 0.5} film. The saturated magnetizations at room temperature are observed to be 570?emu/cm{sup 3} and 180?emu/cm{sup 3} and the coercivities to be 170 and 364?Oe for Fe{sub 0.6}Ga{sub 0.4} and Fe{sub 0.5}Ga{sub 0.5}, respectively. A hysteresis trend in Hall resistance vs. magnetic field is observed for Fe{sub 0.5}Ga{sub 0.5} film. However, there is a weak hysteresis noticed in Fe{sub 0.4}Ga{sub 0.6} thin film.

  16. Catastrophic degradation of InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy

    SciTech Connect (OSTI)

    Ueda, O.; Wakao, K.; Komiya, S.; Yamaguchi, A.; Isozumi, S.; Umebu, I.

    1985-12-01T23:59:59.000Z

    Catastrophically degraded InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy, emitting at 727 and 810 nm are investigated by photoluminescence topography, scanning electron microscopy, transmission electron microscopy, and energy dispersive x-ray spectroscopy. The degradation is mainly due to catastrophic optical damage at the facet, i.e., development of <110> dark-line defects from the facet, and rarely due to catastrophic optical damage at some defects, i.e., development of <110> dark-line defects from the defects inside the stripe region. These <110> dark-line defects correspond to complicated dislocation networks connected with dark knots, and are quite similar to those observed in catastrophically degraded GaAlAs/GaAs double-heterostructure lasers. The degradation characteristics of the InGaAsP/InGaP double-heterostructure lasers are rather similar to those in GaAlAs/GaAs double-heterostructure lasers concerning the catastrophic degradation.

  17. Dynamics of thermalization in GaInN/GaN quantum wells grown on ammonothermal GaN

    SciTech Connect (OSTI)

    Binder, J.; Korona, K. P.; Wysmo?ek, A.; Kami?ska, M. [Faculty of Physics, University of Warsaw, ul. Hoza 69, 00-681 Warsaw (Poland); Köhler, K.; Kirste, L.; Ambacher, O. [Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg (Germany); Zaj?c, M.; Dwili?ski, R. [AMMONO SA, Czerwonego Krzy?a 2/31, 00-377 Warsaw (Poland)

    2013-12-14T23:59:59.000Z

    In this work, we present measurements of the dynamics of photoexcited carriers in GaInN/GaN quantum wells (QWs) grown on ammonothermal GaN, especially thermalization and recombination rates. Emission properties were measured by time-resolved photoluminescence (PL) and electroluminescence spectroscopy. Due to the use of high quality homoepitaxial material, we were able to obtain very valuable data on carrier thermalization. The temperature dependence of the QW energy observed in PL shows characteristic S-shape with a step of about 10?meV. Such a behavior (related to thermalization and localization at potential fluctuations) is often reported for QWs; but in our samples, the effect is smaller than in heteroepitaxial InGaN/GaN QWs due to lower potential fluctuation in our material. Absorption properties were studied by photocurrent spectroscopy measurements. A comparison of emission and absorption spectra revealed a shift in energy of about 60?meV. Contrary to PL, the QW energy observed in absorption decreases monotonically with temperature, which can be described by a Bose-like dependence E(T)?=?E(0) ? ?/(exp(?/T) ? 1), with parameters ??=?(0.11?±?0.01) eV, ??=?(355?±?20)?K, or by a Varshni dependence with coefficients ??=?(10?±?3) × 10{sup ?4}?eV/K and ??=?(1500?±?500) K. Taking into account absorption and emission, the fluctuation amplitude (according to Eliseev theory) was ??=?14?meV. The time resolved PL revealed that in a short period (<1?ns) after excitation, the PL peaks were broadened because of the thermal distribution of carriers. We interpreted this distribution in terms of quasi-temperature (T{sub q}) of the carriers. The initial T{sub q} was of the order of 500?K. The thermalization led to a fast decrease of T{sub q}. The obtained cooling time in the QW was ?{sub C}?=?0.3?ns, which was faster than the observed recombination time ?{sub R}?=?2.2?ns (at 4?K)

  18. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure

    SciTech Connect (OSTI)

    Barbosa, B. G.; Arakaki, H.; Souza, C. A. de; Pusep, Yu. A. [Instituto de Fisica de São Carlos, Universidade de São Paulo, 13560-970 Sao Carlos, SP (Brazil)

    2014-03-21T23:59:59.000Z

    Photoluminescence was studied in GaAs/AlGaAs nanowires (NWs) with different radial heterostructures. We demonstrated that manipulation of the emission energy may be achieved by appropriate choice of the shell structure. The emission at highest energy is generated in the NWs with tunneling thin AlGaAs inner shell and thin GaAs outer shell due to recombination of the photoexcited electrons confined in the outer shell with the holes in the core. Lower energy emission was shown to occur in the NWs with thick outer shell grown in the form of a short-period GaAs/AlGaAs multiple quantum well structure. In this case, the tunneling probability through the multiple quantum wells controls the energy emitted by the NWs. The doping of core results in dominated low energy emission from the GaAs core.

  19. Biogas and Fuel Cells Workshop Summary Report: Proceedings from the Biogas and Fuel Cells Workshop, Golden, Colorado, June 11-13, 2012

    SciTech Connect (OSTI)

    Not Available

    2013-01-01T23:59:59.000Z

    The U.S. Department of Energy (DOE) National Renewable Energy Laboratory (NREL) held a Biogas and Fuel Cells Workshop June 11-13, 2012, in Golden, Colorado, to discuss biogas and waste-to-energy technologies for fuel cell applications. The overall objective was to identify opportunities for coupling renewable biomethane with highly efficient fuel cells to produce electricity; heat; combined heat and power (CHP); or combined heat, hydrogen and power (CHHP) for stationary or motive applications. The workshop focused on biogas sourced from wastewater treatment plants (WWTPs), landfills, and industrial facilities that generate or process large amounts of organic waste, including large biofuel production facilities (biorefineries).

  20. A Review of "Majesty and Humanity: Kings and Their Doubles in the Political Drama of the Spanish Golden Age" by Alban K. Forcione

    E-Print Network [OSTI]

    Bass, Laura

    2011-01-01T23:59:59.000Z

    years. For instance, the ?Conclusion? along with the last two chapters would provide a fresh and illuminating perspective on Baroque literature of Spain. The first two chapters could enrich a study of Columbus?s travel log or Cort?s?s ?Letters from... Mexico.? Whether read in parts or as a whole, Vilches?s book offers the reader a layered and insightful examination of early modern Spain?s ?Golden Age,? attune to all the contradictions that follow from this term. Alban K. Forcione. Majesty...

  1. EA-1968: Site-Wide Environmental Assessment of the U.S. Department of Energy National Renewable Energy Laboratory (NREL) South Table Mountain (STM) Campus, Golden, Colorado

    Broader source: Energy.gov [DOE]

    DOE is preparing a Site-Wide Environmental Assessment to analyze the potential environmental impacts of possible site operations and improvements over the next five to ten years at DOE’s STM campus of NREL and nearby leased support facilities in Golden, Colorado. This proposed action would support DOE’s mission to research, develop, and deploy energy efficiency and renewable energy technologies and would consist of: • Research, routine laboratory, and site operation enhancements • New building construction and modifications of existing buildings • Infrastructure and utilities upgrades and enhancements

  2. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01T23:59:59.000Z

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  3. Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and reflection high-energy electron diffraction

    E-Print Network [OSTI]

    Brown, J S; Koblmuller, G; Wu, F; Averbeck, R; Riechert, H; Speck, J S

    2006-01-01T23:59:59.000Z

    PA-MBE GaN growth conditions, with substrate temperatures ofthe GaN surface roughness evolution, substrate vicinality,vapor and substrate temperature could form the basis for GaN

  4. Refractive index of erbium doped GaN thin films

    SciTech Connect (OSTI)

    Alajlouni, S.; Sun, Z. Y.; Li, J.; Lin, J. Y.; Jiang, H. X., E-mail: hx.jiang@ttu.edu [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States); Zavada, J. M. [Department of Electrical and Computer Engineering, Polytechnic Institute of New York University, Brooklyn, New York 11201 (United States)

    2014-08-25T23:59:59.000Z

    GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540?nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those obtained by conventional growth method of continuous flow of reaction precursors. X-ray diffraction rocking curve linewidths of less than 300?arc sec were achieved for the GaN (0002) diffraction peak, which is comparable to the typical results of undoped high quality GaN epilayers and represents a major improvement over previously reported results for GaN:Er. Spectroscopic ellipsometry was used to determine the refractive index of the GaN:Er epilayers in the 1540?nm wavelength window and a linear dependence on Er concentration was found. The observed refractive index increase with Er incorporation and the improved crystalline quality of the GaN:Er epilayers indicate that low loss GaN:Er optical waveguiding structures are feasible.

  5. Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors

    SciTech Connect (OSTI)

    Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

    1998-10-14T23:59:59.000Z

    GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

  6. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-05-26T23:59:59.000Z

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  7. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Carrington, P. J.; Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

    2014-01-07T23:59:59.000Z

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  8. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

    2014-02-03T23:59:59.000Z

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  9. Intersubband absorption in AlN/GaN/AlGaN coupled quantum wells

    SciTech Connect (OSTI)

    Driscoll, Kristina; Bhattacharyya, Anirban; Moustakas, Theodore D.; Paiella, Roberto; Zhou, Lin; Smith, David J. [Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 Saint Mary's Street, Boston, Massachusetts 02215 (United States); Department of Physics and School of Materials, Arizona State University, Tempe, Arizona 85287 (United States)

    2007-10-01T23:59:59.000Z

    AlN/GaN/AlGaN coupled quantum wells grown by molecular beam epitaxy have been developed and characterized via intersubband absorption spectroscopy. In these structures, an AlGaN layer of sufficiently low Al content is used to achieve strong interwell coupling without the need for ultrathin inner barriers. At the same time, AlN is used in the outer barriers to provide the large quantum confinement required for near-infrared intersubband transitions. The composition of the inner barriers also provides a continuously tunable parameter to control the coupling strength. Double intersubband absorption peaks are measured in each sample, at photon energies in good agreement with theoretical expectations.

  10. GaN based nanorods for solid state lighting

    SciTech Connect (OSTI)

    Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

    2012-04-01T23:59:59.000Z

    In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

  11. Reduction of gap states of ternary IIIV semiconductor surfaces by sulfur passivation: Comparative studies of AlGaAs and InGaP

    E-Print Network [OSTI]

    Kim, Sehun

    studies of AlGaAs and InGaP J. M. Seo School of Physics and Technology, Jeonbuk National University on liquid-phase-epitaxy-grown n-type InGaP and AlGaAs surfaces have been studied using x-ray photoelectron treatment in air. For InGaP, sulfur atoms initially reacted with both surface In and Ga atoms and reacted

  12. In0.6Ga0.4AsGaAs quantum-dot infrared photodetector with operating temperature up to 260 K

    E-Print Network [OSTI]

    Florida, University of

    the large band gap material such as AlGaAs or InGaP as blocking barrier to reduce the device dark current 100 K by us- ing a large band gap material such as AlGaAs or InGaP as the blocking barrier to reduce temperature up to 260 K without using the wide band gap AlGaAs or InGaP current blocking bar- rier. The sample

  13. Phase-locking of an InP/InGaP/InGaAs resonant tunneling diode relaxation oscillator by direct optical injection

    E-Print Network [OSTI]

    Eisenstein, Gadi

    Phase-locking of an InP/InGaP/InGaAs resonant tunneling diode relaxation oscillator by direct relaxation oscillator is demonstrated. The diode is an Al-free InP/InGaP/InGaAs structure in the InP/InGaAs/InGaP aluminum-free material system, following the work of Cohen and Ritter [6

  14. Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    the last quantum barrier in InGaN/GaN light-emitting diodes Zabu Kyaw, Zi-Hui Zhang, Wei Liu, Swee Tiam Tan injection and efficiency droop in InGaN/GaN light-emitting diodes with step-stage multiple- quantum distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers Appl. Phys. Lett. 102

  15. IEEE ELECTRON DEVICE LETTERS, VOL. 21, NO. 12, DECEMBER 2000 549 Dual-Gate AlGaN/GaN Modulation-Doped

    E-Print Network [OSTI]

    Rodwell, Mark J. W.

    IEEE ELECTRON DEVICE LETTERS, VOL. 21, NO. 12, DECEMBER 2000 549 Dual-Gate AlGaN/GaN Modulation--We demonstrate dual-gate AlGaN/GaN modula- tion-doped field-effect transistors (MODFETs) with gate-lengths of 0 power amplifiers. Index Terms--AlGaN/GaN, broadband power amplifiers, dual-gate FETs. I. INTRODUCTION

  16. Graded-base InGaN/GaN heterojunction bipolar light-emitting transistors B. F. Chu-Kung,a

    E-Print Network [OSTI]

    Asbeck, Peter M.

    Graded-base InGaN/GaN heterojunction bipolar light-emitting transistors B. F. Chu-Kung,a M. Feng, G; published online 25 August 2006 The authors report radiative recombination from a graded-base InGaN/GaN microwave power has been obtained from GaN field-effect transistors, very few operational GaN-based HBTs

  17. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing://scitation.aip.org/content/aip/journal/apl/105/3?ver=pdfcov Published by the AIP Publishing Articles you may be interested in High efficiency InGaN/GaN (2014); 10.1063/1.4867023 Effect of V-defects on the performance deterioration of InGaN/GaN multiple

  18. Polarized emission lines from A-and B-type excitonic complexes in single InGaN/GaN quantum dots

    E-Print Network [OSTI]

    Nabben, Reinhard

    Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots M Cathodoluminescence measurements on single InGaN/GaN quantum dots QDs are reported. Complex spectra with up to five spectral region have been realized based on InGaN structures.1 Single-photon emission from GaN/AlN quantum

  19. Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate C. Hums, T. Finger, T. Hempel, J. Christen, and A. Dadgara

    E-Print Network [OSTI]

    Nabben, Reinhard

    Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate C. Hums, T. Finger, T. Hempel, J spectra of InGaN/GaN heterostructures and quantum wells epitaxially grown on Si 111 substrates. This Fabry-Perot effect results from the high refractive index contrasts at the GaN/Si and the Air/InGaN interfaces

  20. Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal

    E-Print Network [OSTI]

    Ozbay, Ekmel

    on nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrates prepared by metal undoped Al0.25Ga0.75N/GaN/ AlN heterostructures grown on sapphire substrate. © 2007 Elsevier B.V. All of AlGaN on a thick GaN epilayer on a semi- insulating substrate. Spontaneous and strain induced

  1. Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3CSiC ,,001...

    E-Print Network [OSTI]

    As, Donat Josef

    through the substrate. Cubic AlGaN/GaN heterostructures were grown in a RibeNonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C­SiC ,,001... E HFET was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3C­SiC 001 by molecular beam

  2. A15 superconductors through direct solid-state precipitation: V/sub 3/Ga and Nb/sub 3/Al

    SciTech Connect (OSTI)

    Hong, M.

    1980-09-01T23:59:59.000Z

    A solid-state precipitation process was used to prepare superconducting tapes containing an A15 phase, V/sub 3/Ga or Nb/sub 3/Al, in a ductile niobium or vanadium containing BCC matrix. Ingots weighing as large as 30 to 50 gms of V-(14 approx. 19 at. %) Ga and Nb-(13 approx. 22 at. %) Al were prepared by arc-melting, homogenized, quenched, warm-rolled over 99% into tape, and aged at temperatures in the range 600/sup 0/C to 1000/sup 0/C to precipitate the superconducting A15 phase. The features demonstrated by the process are very attractive for practical applications. In the V-Ga system, transmission electron microscopy (TEM) studies revealed the A15 precipitates in an elongated form. However, for the Nb-Al samples, deformed and aged at 750/sup 0/C, TEM studies revealed A15 precipitation in fine equi-axed particles which formed as a semi-continuous network over sub-grain boundaries formed by the recovery of deformation-induced dislocations. In the V-Ga system, the maximum critical transition temperature (approx. 15 K) was found in materials aged at temperatures of 750/sup 0/C or below. At these aging temperatures the T/sub c/ initially increased with aging time and passed through a distinct maximum. The source of the exceptionally high T/sub c/ is discussed. In the Nb-Al system, the aging response of the T/sub c/ of the tested samples was somewhat different; the T/sub c/ increased with aging time to a plateau, and then increased again to a second plateau. The maximum T/sub c/ measured was approx. 17 K. Promising high-field overall critical currents were obtained in the Nb-Al system (overall J/sub c/ approx. 10/sup 4/ A/cm/sup 2/ in a magnetic field of 140 KG at 4.2 K).

  3. On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    . Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, "Origin of efficiency droop in Ga. Tansu, "Current injection efficiency induced efficiency-droop in InGaN quantum well light. Van de Walle, "Indirect Auger recombination as a cause of efficiency droop in nitride light

  4. Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures

    SciTech Connect (OSTI)

    Nakajima, Akira, E-mail: a-nakajima@aist.go.jp; Ogura, Masahiko; Makino, Toshiharu; Nishizawa, Shin-ichi; Ohashi, Hiromichi; Yamasaki, Satoshi [Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba 305-8568 (Japan); Liu, Pucheng; Kakushima, Kuniyuki; Iwai, Hiroshi [Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori, Yokohama, Kanagawa 226-8503 (Japan)

    2014-04-21T23:59:59.000Z

    The electrical properties of two-dimensional hole gases (2DHGs) in GaN/AlGaN/GaN double heterostructures were investigated. The layers were grown on sapphire substrates and a high-quality bulk GaN substrate. The coexistence of 2DHG and 2D electron gases on both sides of the AlGaN layer was confirmed by Hall effect measurements at 80–460?K. It was also verified that the 2DHGs were generated by negative polarization at the undoped GaN/AlGaN interface, which did not have a doped Mg acceptor. It was also demonstrated that the 2DHG density could be controlled by varying the AlGaN layer thickness and was inversely related to the 2DHG mobility. The measured relation indicated that the 2DHG mobility is mainly limited by phonon scatterings at around room temperature. As a result, the maximum 2DHG mobility of 16 cm{sup 2}/Vs at 300?K was achieved with a density of 1?×?10{sup 13}?cm{sup ?2}.

  5. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074, Würzburg (Germany); Igusa, R.; Iwamoto, S.; Arakawa, Y. [University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

    2014-09-15T23:59:59.000Z

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  6. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12T23:59:59.000Z

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  7. Wavelength limits for InGaN quantum wells on GaN

    SciTech Connect (OSTI)

    Pristovsek, Markus, E-mail: markus@pristovsek.de [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)] [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)

    2013-06-17T23:59:59.000Z

    The emission wavelength of coherently strained InGaN quantum wells (QW) is limited by the maximum thickness before relaxation starts. For high indium contents x>40% the resulting wavelength decreases because quantum confinement dominates. For low indium content x<40% the electron hole wave function overlap (and hence radiative emission) is strongly reduced with increasing QW thickness due to the quantum confined Stark effect and imposes another limit. This results in a maximum usable emission wavelength at around 600?nm for QWs with 40%-50% indium content. Relaxed InGaN buffer layers could help to push this further, especially on non- and semi-polar orientations.

  8. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. (USDOE Idaho Field Office, Idaho Falls, ID (United States)); Koploy, M.A. (General Atomics, San Diego, CA (United States))

    1992-01-01T23:59:59.000Z

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  9. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. [USDOE Idaho Field Office, Idaho Falls, ID (United States); Koploy, M.A. [General Atomics, San Diego, CA (United States)

    1992-08-01T23:59:59.000Z

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  10. Two-color picosecond and continuous-wave experiments on anti-Stokes and Stokes carrier-transfer phenomena in GaAs/AlxGa1 xAs and InGaP2 /AlxGa1 xAs heterostructures

    E-Print Network [OSTI]

    Hohng, Sung Chul

    -transfer phenomena in GaAs/AlxGa1 xAs and InGaP2 /AlxGa1 xAs heterostructures S. C. Hohng, D. W. Khang, Y. H. Ahn, J evidence of the two-step absorption process in anti-Stokes photoluminescence in both GaAs/AlxGa1 xAs and InGaP

  11. Demonstration of a semipolar (10(1)over-bar(3)over-bar) InGaN/GaN green light emitting diode

    E-Print Network [OSTI]

    2005-01-01T23:59:59.000Z

    InGaN / GaN green light emitting diode R. Sharma, a? P. M.green ??525 nm? light emitting diode ?LED?. The fabricated

  12. Office of Fossil Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    TX - - - - - 2.7 3.0 - - - - - 5.7 Golden Pass, TX - - - - - - - - - - - - - Gulf LNG, MS - - - - - - - - - - - - - Lake Charles, LA - - - - - - - - - - - - - Neptune...

  13. Method and system for compact, multi-pass pulsed laser amplifier

    DOE Patents [OSTI]

    Erlandson, Alvin Charles

    2014-11-25T23:59:59.000Z

    A laser amplifier includes an input aperture operable to receive laser radiation having a first polarization, an output aperture coupled to the input aperture by an optical path, and a polarizer disposed along an optical path. A transmission axis of the polarizer is aligned with the first polarization. The laser amplifier also includes n optical switch disposed along the optical path. The optical switch is operable to pass the laser radiation when operated in a first state and to reflect the laser radiation when operated in a second state. The laser amplifier further includes an optical gain element disposed along the optical path and a polarization rotation device disposed along the optical path.

  14. Sabine Pass, LA Liquefied Natural Gas Exports to India (Million Cubic Feet)

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122Commercial ConsumersThousand CubicCubicIndia (Million Cubic Feet) Sabine Pass, LA

  15. Sabine Pass, LA Liquefied Natural Gas Imports From Norway (Million Cubic

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122Commercial ConsumersThousand CubicCubicIndia (Million Cubic Feet) Sabine Pass,

  16. PIA - WEB iPASS System DOE PIA | Department of Energy

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122Commercial602 1,39732onMakeEducation ProgramsTour Tracker PIA - TouriPASS System DOE

  17. Statement on the Passing of Admiral James D. Watkins | Department of Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over Our Instagram Secretary900 SpecialNanoparticulateEmissions Targetson the Passing of

  18. Distributed bragg reflector using AIGaN/GaN

    DOE Patents [OSTI]

    Waldrip, Karen E.; Lee, Stephen R.; Han, Jung

    2004-08-10T23:59:59.000Z

    A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

  19. Ion-beam-induced chemical disorder in GaN

    SciTech Connect (OSTI)

    Ishimaru, Manabu; Zhang, Yanwen; Weber, William J.

    2009-09-08T23:59:59.000Z

    Atomistic structures of high-energy ion irradiated GaN have been examined using transmission electron microscopy (TEM). Single crystalline GaN substrates were irradiated at cryogenic temperature with 2 MeV Au2+ ions to a fluence of 7.35x1015 Au/cm2. Cross-sectional TEM observations revealed that damaged layers consisting of amorphous and nanocrystalline phases are formed at the surface and buried depth of the as-irradiated GaN substrate. Atomic radial distribution functions of the amorphous/poly-nanocrystalline regions showed that not only heteronuclear Ga-N bonds but also homonuclear Ga-Ga bonds exist within the first coordination shell. It was found that the ratio of heteronuclear-to-homonuclear bonds, i.e., the degree of chemical disorder is different between the surface and buried damaged layers. The alternation of chemical disorder was attributed to the difference in the defect formation processes between these layers.

  20. Habitat use and occurrence of the bull shark (Carcharhinus leucas) near the Sabine Pass inlet of Texas and Louisiana

    E-Print Network [OSTI]

    Shipley, Jennifer Brooke

    2000-01-01T23:59:59.000Z

    The role of nearshore Gulf of Mexico habitats adjacent to Sabine Pass, a tidal inlet forming the southernmost border between Texas and Louisiana, in bull shark (Carcharhinus leucas) life history as well as the impact of selected environmental...

  1. Radiation Hard AlGaN Detectors and Imager

    SciTech Connect (OSTI)

    None

    2012-05-01T23:59:59.000Z

    Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

  2. components of the ICE course will be sought after each session through the use of on-line, anonymous Session Evaluations on OASIS. In order to pass

    E-Print Network [OSTI]

    Myers, Lawrence C.

    -line, anonymous Session Evaluations on OASIS. In order to pass the ICE course 80% of the session evaluations must

  3. P-type doping of GaN

    SciTech Connect (OSTI)

    Wong, R.K.

    2000-04-10T23:59:59.000Z

    After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

  4. Segregation of In to dislocations in InGaN

    E-Print Network [OSTI]

    Horton, Matthew K.; Rhode, Sneha; Sahonta, Suman-Lata; Kappers, Menno J.; Haigh, Sarah J.; Pennycook, Timothy J.; Humphreys, Colin J.; Dusane, Rajiv O.; Moram, Michelle A.

    2015-01-16T23:59:59.000Z

    .; Fischer, A. J.; Thaler, G.; Banas, M. A. Effect of dislocation density on efficiency droop in GaInN?GaN light-emitting diodes. Applied Physics Letters 2007, 91, 231114 DOI: 10.1063/1.2822442. (3) Schubert, M. F.; Xu, J.; Kim, J. K.; Schubert, E. F.; Kim... , M. H.; Yoon, S.; Lee, S. M.; Sone, C.; Sakong, T.; Park, Y. Polarization-matched GaInN?AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop. Applied Physics Letters 2008, 93, 041102 DOI: 10.1063/1.2963029. (4) Hsu, J. W. P...

  5. Surface Science Analysis of GaAs Photocathodes Following Sustained...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Analysis of GaAs Photocathodes Following Sustained Electron Beam Delivery. Abstract: Degradation of the photocathode materials employed in photoinjectors represents a challenge for...

  6. Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application

    SciTech Connect (OSTI)

    Ren, F.; Abernathy, C.R.; Pearton, S.J.; Lothian, J.R.; Wisk, P.W.; Fullowan, T.R.; Youngkai Chen (AT and T Bell Labs., Murray Hill, NJ (United States)); Yang, L.W.; Fu, S.T.; Brozovich, R.S. (General Electric Co., Syracuse, NY (USSR))

    1993-07-01T23:59:59.000Z

    As an alternative to AlGaAs/GaAs heterojunction bipolar transistors (HBT's) for microwave applications, InGaP/ GaAs HBT's with carbon-doped base layers grown by metal organic molecular beam epitaxy (MOMBE) are demonstrated with excellent dc, RF, and microwave performance. As previously reported, with a 700-[angstrom]-thick base layer (135-[Omega]/[open square] sheet resistance), a dc current gain of 25, and cutoff frequency and maximum frequency of oscillation above 70 GHz were measured for a 2 [times] 5-[mu]m[sup 2] emitter area device. A device with 12 cells, each consisting of a 2 [times] 15-[mu] m[sup 2] emitter area device for a total emitter area of 360 [mu] m[sup 2], was power tested at 4 GHz under continuous-wave (CW) bias condition. The device delivered 0.6-W output power with 13-dB linear gain and a power-added efficiency of 50%.

  7. High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

    SciTech Connect (OSTI)

    Chang, Chiao-Yun; Li, Hen; Lu, Tien-Chang, E-mail: timtclu@mail.nctu.edu.tw [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300 (China)

    2014-03-03T23:59:59.000Z

    In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20?mA and a 27.0% efficiency droop at 100?mA (corresponding to a current density of 69?A/cm{sup 2}), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs.

  8. Influence of substrate quality on structural properties of AlGaN/GaN superlattices grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Schubert, F. [NaMLab gGmbH, Nöthnitzer Straße 64, 01187 Dresden (Germany); Merkel, U.; Schmult, S. [TU Dresden, Institute of Semiconductors and Microsystems, Nöthnitzer Straße 64, 01187 Dresden (Germany); Mikolajick, T. [NaMLab gGmbH, Nöthnitzer Straße 64, 01187 Dresden (Germany); TU Dresden, Institute of Semiconductors and Microsystems, Nöthnitzer Straße 64, 01187 Dresden (Germany)

    2014-02-28T23:59:59.000Z

    Short-period AlGaN/GaN superlattices were established as versatile test structures to investigate the structural properties of molecular beam epitaxy (MBE)-grown GaN and AlGaN layers and their dependence on the GaN substrate quality. X-ray diffractometry data of the investigated superlattices allow access to relevant structural parameters such as aluminum mole fraction and layer thicknesses. The occurrence of theoretically predicted intense high-order satellite peaks and pronounced interface fringes in the diffraction pattern reflects abrupt interfaces and perfect 2-dimensional growth resulting in smooth surfaces. The data unambiguously demonstrate that the structural quality of the MBE grown layers is limited by the structural properties of the GaN substrate.

  9. Asynchronous Signal Passing for Tile Self-Assembly: Fuel Efficient Computation and Efficient Assembly of Shapes

    E-Print Network [OSTI]

    Padilla, Jennifer E; Pena, Raul; Schweller, Robert T; Seeman, Nadrian C; Sheline, Robert; Summers, Scott M; Zhong, Xingsi

    2012-01-01T23:59:59.000Z

    In this paper we study the power of a model of tile self-assembly in which individual tiles of the system have the ability to turn on or off glue types based on the bonding of other glues on the given tile. This work is motivated by the desire for a system that can effect recursive self assembly, and is guided by the consideration of a DNA origami implementation of four-sided tiles which have a small set of queued up reactions based on DNA strand replacement. We formulate the Signal passing Tile Assembly Model which is based on the model of Padilla, et al. (2011), but is asynchronous in that any action of turning a glue on or off, or attaching a new tile, or the breaking apart of an assembly, may happen in any order. Within this most general case we study tile self-assembly problems that have been addressed within the abstract Tile Assembly Model, as well as other variants of that model, and show that signal passing tiles allow for substantial improvement across multiple metrics. Our first results focus on th...

  10. Second stable regime of internal kink modes excited by barely passing energetic ions in tokamak plasmas

    SciTech Connect (OSTI)

    He, H. D.; Zheng, G. Y.; Long, Y. X.; He, Z. X.; Jiang, H. B.; Shen, Y.; Wang, L. F. [Southwestern Institute of Physics, Chengdu, Sichuan 610041 (China); Dong, J. Q. [Southwestern Institute of Physics, Chengdu, Sichuan 610041 (China); Institute for Fusion Theory and Simulation, Zhejiang University, Hangzhou (China); Fu, G. Y. [Princeton Plasma Physics Laboratory, Princeton, New Jersey 08543 (United States); Sheng, Z. M. [Institute for Fusion Theory and Simulation, Zhejiang University, Hangzhou (China)

    2010-08-15T23:59:59.000Z

    The internal kink (fishbone) modes, driven by barely passing energetic ions (EIs), are numerically studied with the spatial distribution of the EIs taking into account. It is found that the modes with frequencies comparable to the toroidal precession frequencies are excited by resonant interaction with the EIs. Positive and negative density gradient dominating cases, corresponding to off- and near-axis depositions of neutral beam injection (NBI), respectively, are analyzed in detail. The most interesting and important feature of the modes is that there exists a second stable regime in higher {beta}{sub h} (=pressure of EIs/toroidal magnetic pressure) range, and the modes may only be excited by the barely passing EIs in a region of {beta}{sub th1}<{beta}{sub h}<{beta}{sub th2} ({beta}{sub th} is threshold or critical beta of EIs). Besides, the unstable modes require minimum density gradients and minimum radial positions of NBI deposition. The physics mechanism for the existence of the second stable regime is discussed. The results may provide a means of reducing or even preventing the loss of NBI energetic ions and increasing the heating efficiency by adjusting the pitch angle and driving the system into the second stable regime fast enough.

  11. Ferromagnetic semiconductors based upon AlGaP M. E. Overberg,a)

    E-Print Network [OSTI]

    Hebard, Arthur F.

    band-gap ternary InGaP, which is lattice matched to GaAs. An immediate application of the DMS, with its wide band-gap binary GaP, AlP and ternary InGaP, AlGaP, AlInP components, is used for devices

  12. Radiation response of single and dual junction p{sup +}n InGaP/GaAs space solar cells

    SciTech Connect (OSTI)

    Walters, R.J.; Xapsos, M.A.; Summers, G.P. [Naval Research Lab., Washington, DC (United States); Cotal, H.L.; Messenger, S.R. [SFA, Inc., Largo, MD (United States)

    1997-12-31T23:59:59.000Z

    The radiation response of single and dual-junction p{sup +}n InGaP/GaAs solar cells is studied. The degradation mechanisms of single-junction InGaP cells are identified, and characteristic degradation curves in terms of displacement damage dose are calculated. The response of dual-junction cells is presented, and the response of each sub-cell is discussed. The cell response is compared with those of other technologies. The effect of current injection on irradiated InGaP cell is presented.

  13. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04T23:59:59.000Z

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  14. Surface donor states distribution post SiN passivation of AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Goyal, Nitin, E-mail: nitin@unik.no [Carinthian Tech Research CTR AG, Europastraße 4/1, Technologiepark Villach, A- 9524 Villach/St. Magdalen (Austria); Department of Electronics and Telecommunication, Norwegian University of Science and Technology, Trondheim NO7034 (Norway); Fjeldly, Tor A. [Department of Electronics and Telecommunication, Norwegian University of Science and Technology, Trondheim NO7034 (Norway)

    2014-07-21T23:59:59.000Z

    In this paper, we present a physics based analytical model to describe the effect of SiN passivation on two-dimensional electron gas density and surface barrier height in AlGaN/GaN heterostructures. The model is based on an extraction technique to calculate surface donor density and surface donor level at the SiN/AlGaN interface. The model is in good agreement with the experimental results and promises to become a useful tool in advanced design and characterization of GaN based heterostructures.

  15. Free-standing AlxGa1-xAs heterostructures by gas-phase etching of germanium

    E-Print Network [OSTI]

    As compounds encompassing low aluminum content AlGaAs, InGaAs, InGaP, etc. , typi- cally, a sacrificial Al

  16. Manager, Golden Field Office

    Broader source: Energy.gov [DOE]

    This position is located in the Office of Energy Efficiency and Renewable Energy (EERE). The mission of EERE is to create and sustain American leadership in the global transition to a clean energy...

  17. Golden Field Office

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't YourTransport(Fact Sheet), Geothermal TechnologiesGeothermalGo for the Gold inDepartment Going,5

  18. Golden - Local Information | NREL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC) Environmental AssessmentsGeoffrey(SC) GettingGit GitGlobal

  19. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2013-11-04T23:59:59.000Z

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  20. Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat

    E-Print Network [OSTI]

    Shepelyansky, Dima

    Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given