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Sample records for ga golden pass

  1. EIS-0501: Golden Pass LNG Export and Pipeline Project, Texas...

    Broader source: Energy.gov (indexed) [DOE]

    at the existing Golden Pass liquefied natural gas terminal in Jefferson County, Texas. The proposal includes three new compressor stations in Jefferson and Orange Counties,...

  2. EA-1971: Golden Pass LNG Export and Pipeline Project, Texas and Louisiana

    Broader source: Energy.gov [DOE]

    The Federal Energy Regulatory Commission (FERC), with DOE as a cooperating agency, announced its intent to prepare an EA to analyze the potential environmental impacts of a proposal to construct and operate natural gas liquefaction and export facilities at the existing Golden Pass liquefied natural gas terminal in Jefferson County, Texas. In June 2014, FERC announced that due to changes in the project location and scope, it would prepare an EIS. See DOE/EIS-0501.

  3. Response of Red-Tailed Hawks and Golden Eagles to Topographical Features, Weather, and Abundance of a Dominant Prey Species at the Altamont Pass Wind Resource Area, California: April 1999-December 2000

    SciTech Connect (OSTI)

    Hoover, S.

    2002-06-01

    Studies have shown that raptors flying within the Altamont Pass WRA are vulnerable to fatal turbine collisions, possibly because of their specific foraging and flight behavior. Between June 1999 and June 2000, I conducted 346.5 hours of raptor observations within the Atlamont Pass WRA. Behavior was recorded in relation to characteristics of the topography (slope aspect, elevation, and inclination), the weather, and ground squirrel abundance, as determined by active burrow entrances. The most significant finding of this study revealed that red-tailed hawks and golden eagles flew more in strong winds than in weak winds, particularly along hillsides facing into prevailing winds (as opposed to hillsides shielded from the wind). This is likely a result of the birds' use of declivity currents for lift during flights. These results suggest that certain combinations of topography and weather produce wind currents that are sought out by foraging red-tailed hawks and golden eagles within the Altamont Pass WRA. To decrease raptor mortality, mitigation measures can be targeted to specific areas likely to attract foraging raptors because of their capacity to create particularly favorable wind currents.

  4. Golden Field Office

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12,Executive CompensationEnergyGet Current:5 Department of Energy Golden

  5. Subject Exam Pass Clerkship

    E-Print Network [OSTI]

    Alford, Simon

    Clinical Component PASS NBME Subject Exam PASS Pass Clerkship (Final Grade: Proficient, Advanced, Outstanding) Clinical Component NBME Subject Exam PASS FAIL NBME Subject Exam (2nd attempt) PASS FAIL Pass) Repeat Clerkship ** NBME Subject Exam (final attempt) PASS FAIL Pass Clerkship ¹ (Final Grade: Proficient

  6. Golden Opportunity: Noncompliance Determination (2013-SE-1418)

    Broader source: Energy.gov [DOE]

    DOE issued a Notice of Noncompliance Determination to Golden Opportunity, Inc. finding that freezer models Golden GFC51 and Golden GFC69 do not comport with the energy conservation standards.

  7. Golden Valley Electric Association - Sustainable Natural Alternative...

    Broader source: Energy.gov (indexed) [DOE]

    Gas Tidal Wave Wind (Small) Hydroelectric (Small) Maximum Rebate 1.50kWh Program Info Sector Name Utility Administrator Golden Valley Electric Association Website http:...

  8. Golden Photon | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View New Pages RecentPlantMagma Energy GroupDOE Golden Field

  9. Golden Laboratories and Offices | NREL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunitiesNERSC Getting Started at14 atGolden Laboratories and

  10. Press Pass - Press Releases

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    can obtain temporary visitors' passes. The laboratory will also be closed to pedestrian and bicycle traffic. Fermilab, traditionally open to visitors, closed its gates in...

  11. Golden Ratio Prediction for Solar Neutrino Mixing

    E-Print Network [OSTI]

    Adisorn Adulpravitchai; Alexander Blum; Werner Rodejohann

    2009-06-17

    It has recently been speculated that the solar neutrino mixing angle is connected to the golden ratio phi. Two such proposals have been made, cot theta_{12} = phi and cos theta_{12} = phi/2. We compare these Ansatze and discuss a model leading to cos theta_{12} = phi/2 based on the dihedral group D_{10}. This symmetry is a natural candidate because the angle in the expression cos theta_{12} = phi/2 is simply pi/5, or 36 degrees. This is the exterior angle of a decagon and D_{10} is its rotational symmetry group. We also estimate radiative corrections to the golden ratio predictions.

  12. SEMI-ANNUAL REPORTS FOR GOLDEN PASS PRODUCTS LLC - FE DKT. NO...

    Broader source: Energy.gov (indexed) [DOE]

    - GULF LNG LIQUEFACTION COMPANY, LLC - FE DKT. NO. 12-47-LNG - ORDER 3104 SEMI-ANNUAL REPORTS FOR SOUTHERN LNG COMPANY - FE DKT. NO. 12-54-LNG - ORDER 3106 Semi-annual Reports for...

  13. SEMI-ANNUAL REPORTS FOR GOLDEN PASS PRODUCTS LLC - FE DKT. NO. 12-88-LNG -

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergyTher i nAandSummaryDIST OF COLUMBIANorth Pitt Street,12-47-LNG -3680 |NO.LLC -3290

  14. Golden Pass, TX Natural Gas Liquefied Natural Gas Imports (price) (Dollars

    Gasoline and Diesel Fuel Update (EIA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustments (Billion Cubic Feet)DecadeYear Jan Feb Mar Apr MayYear Jan Feb Mar87.1CubicYear Jan Feb2.56 441per

  15. Golden Pass, TX Natural Gas Liquefied Natural Gas Imports (price) from

    Gasoline and Diesel Fuel Update (EIA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustments (Billion Cubic Feet)DecadeYear Jan Feb Mar Apr MayYear Jan Feb Mar87.1CubicYear Jan Feb2.56

  16. Golden Pass, TX Natural Gas Liquefied Natural Gas Imports (price) from

    Gasoline and Diesel Fuel Update (EIA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustments (Billion Cubic Feet)DecadeYear Jan Feb Mar Apr MayYear Jan Feb Mar87.1CubicYear Jan Feb2.56Qatar

  17. Golden Pass, TX Natural Gas Liquefied Natural Gas Imports from Qatar

    Gasoline and Diesel Fuel Update (EIA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustments (Billion Cubic Feet)DecadeYear Jan Feb Mar Apr MayYear Jan Feb Mar87.1CubicYear Jan

  18. EIS-0501: Golden Pass LNG Export and Pipeline Project, Texas and Louisiana

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum Based|DepartmentStatement |toDepartment of Energy Noticeof Energy|

  19. SEMI-ANNUAL REPORTS FOR GOLDEN PASS PRODUCTS LLC - FE DKT. NO. 12-88-LNG -

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on DeliciousMathematicsEnergyInterestedReplacement-2-AA-1 SECTION J APPENDIX A ADVANCE- FE DKT.3365NO. 3600LLC

  20. Golden Field Office 15013 Denver West Parkway

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12,Executive CompensationEnergyGet Current:5 Department of Energy Golden15013

  1. Golden Field Office | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative Fuels Data Center HomeVehicle Replacement U.S.Job VacanciesGeothermalGolden Field

  2. Battling Golden Algae: Results suggest preventative lake management approaches 

    E-Print Network [OSTI]

    Supercinski, Danielle

    2011-01-01

    stream_source_info Battling Golden Algae.pdf.txt stream_content_type text/plain stream_size 10626 Content-Encoding ISO-8859-1 stream_name Battling Golden Algae.pdf.txt Content-Type text/plain; charset=ISO-8859-1 14 tx H2...O Winter 2011 Story by Danielle Supercinski Battling golden algae Results suggest preventative lake management approaches Golden algae blooms, or the explosive growth of algae, are known to be toxic, but recent ?ndings from three university...

  3. Battling golden algae: Results suggest preventative lake managment approaches 

    E-Print Network [OSTI]

    Supercinski, Danielle

    2011-01-01

    stream_source_info Battling Golden Algae.pdf.txt stream_content_type text/plain stream_size 10626 Content-Encoding ISO-8859-1 stream_name Battling Golden Algae.pdf.txt Content-Type text/plain; charset=ISO-8859-1 14 tx H2...O Winter 2011 Story by Danielle Supercinski Battling golden algae Results suggest preventative lake management approaches Golden algae blooms, or the explosive growth of algae, are known to be toxic, but recent ?ndings from three university...

  4. Golden Opportunity: Order (2014-CE-20003) | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Golden Opportunity had failed to certify that certain models of room air conditioners, central air conditionersheat pumps, and residential clothes washers comply with the...

  5. Golden Field Office | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View New Pages RecentPlantMagma Energy GroupDOE Golden Field Office) Jump

  6. Golden Hills Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View New Pages RecentPlantMagma Energy GroupDOE Golden Field Office)

  7. Golden Valley Wind Park | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View New Pages RecentPlantMagma Energy GroupDOE GoldenPanhandle Wind

  8. International Trade in Natural Gas: Golden Age of LNG?

    E-Print Network [OSTI]

    International Trade in Natural Gas: Golden Age of LNG? Yichen Du and Sergey Paltsev Report No. 271;1 International Trade in Natural Gas: Golden Age of LNG? Yichen Du* and Sergey Paltsev* Abstract The introduction of liquefied natural gas (LNG) as an option for international trade has created a market for natural gas where

  9. Message Passing with Communication Structures 

    E-Print Network [OSTI]

    Yaikhom, Gagarine

    Abstraction concepts based on process groups have largely dominated the design and implementation of communication patterns in message passing systems. Although such an approach seems pragmatic—given that participating ...

  10. Waste Treatment Facility Passes Federal Inspection, Completes...

    Office of Environmental Management (EM)

    Waste Treatment Facility Passes Federal Inspection, Completes Final Milestone, Begins Startup Waste Treatment Facility Passes Federal Inspection, Completes Final Milestone, Begins...

  11. The Golden Age of Software Architecture: A Comprehensive Survey

    E-Print Network [OSTI]

    , technology maturation, history of software engineering #12;The Golden Age of Software Architecture results have moved into practice. Keywords: Software architecture, technology maturation, history of a technology maturation model, matching significant accomplishments in software architecture to the stages

  12. A golden opportunity: Researchers making progress in understanding toxic algae 

    E-Print Network [OSTI]

    Wythe, Kathy

    2008-01-01

    | pg. 20 cientists at three Texas universities investigating golden algae, its explosive growth, and its deadly toxins have dis- covered an apparent competition between golden algae and blue green algae in certain Texas lakes. Understanding... this competition could lead them closer to controlling this harmful algae, the researchers said. ?Our biggest finding so far,? said Dr. Daniel Roelke of Texas AgriLife Research and one of the investigators, ?is that there appears to be a chemical warfare...

  13. Impact of Foliar Fertilizer Containing Iodine on “Golden Delicious” Apple Trees

    E-Print Network [OSTI]

    Szwonek, Eugeniusz

    2009-01-01

    on marketable Golden Delicious/M.9 apple production. At thecontaining fertilizer on apple fruits firmness and theirold “Golden Delicious/M.9” apple trees Trees were spaced at

  14. Golden Fish: An Intelligent Stream Cipher Fuse Memory Modules QiongHai Dai1

    E-Print Network [OSTI]

    International Association for Cryptologic Research (IACR)

    Golden Fish: An Intelligent Stream Cipher Fuse Memory Modules Lan Luo12 QiongHai Dai1 ZhiGuang Qin2 such design style at SHA3. Keywords: An intelligent golden Fish, LFSR & Block Cipher Modes as Stream Cipher

  15. The golden ratio prediction for the solar neutrino mixing

    E-Print Network [OSTI]

    Yuji Kajiyama; Martti Raidal; Alessandro Strumia

    2007-11-28

    We present a simple texture that predicts the cotangent of the solar neutrino mixing angle to be equal to the golden ratio. This prediction is 1.4 standard deviations below the present best-fit value and final SNO and KamLAND data could discriminate it from tri-bi-maximal mixing. The neutrino mass matrix is invariant under a Z_2 x Z'_2 symmetry: that geometrically is a reflection along the diagonal of the golden rectangle. Assuming an analogous structure in the quark sector suggests a golden prediction for the Cabibbo angle, theta_C = pi/4- theta_12 = 13.3 degree, up to uncertainties comparable to V_{ub}.

  16. Expander Graph Arguments for Message Passing Algorithms

    E-Print Network [OSTI]

    Burshtein, David

    Expander Graph Arguments for Message Passing Algorithms David Burshtein and Gadi Miller Dept arguments may be used to prove that message passing algorithms can correct a linear number of erroneous a message passing algorithm has corrected a sufficiently large fraction of the errors, it will eventually

  17. Portland Cement Concrete Pavement Shannon Golden, Alabama DOT

    E-Print Network [OSTI]

    Portland Cement Concrete Pavement Shannon Golden, Alabama DOT PORTLAND CEMENT CONCRETE PAVEMENT may be substituted for part of the required Portland cement. Substitution of mineral admixtures shall Cement shall not exceed the percentages shown in the following table: MAXIMUM ALLOWABLE SUBSTITUTION

  18. Northern Pass Transmission Line Project Environmental Impact...

    Broader source: Energy.gov (indexed) [DOE]

    the location of the September 26 public scoping meeting for the Northern Pass Transmission Line Project to Colebrook Elementary School, 27 Dumont Street, Colebrook, NH. On...

  19. Energy Department Authorizes Sabine Pass Liquefaction's Expansion...

    Office of Environmental Management (EM)

    Expansion Project (Sabine Pass) to export domestically produced liquefied natural gas (LNG) to countries that do not have a Free Trade Agreement (FTA) with the United States. The...

  20. Photoacoustic Soot Spectrometer (PASS) Instrument Handbook

    SciTech Connect (OSTI)

    Dubey, M; Springston, S; Koontz, A; Aiken, A

    2013-01-17

    The photoacoustic soot spectrometer (PASS) measures light absorption by aerosol particles. As the particles pass through a laser beam, the absorbed energy heats the particles and in turn the surrounding air, which sets off a pressure wave that can be detected by a microphone. The PASS instruments deployed by ARM can also simultaneously measure the scattered laser light at three wavelengths and therefore provide a direct measure of the single-scattering albedo. The Operator Manual for the PASS-3100 is included here with the permission of Droplet Measurement Technologies, the instrument’s manufacturer.

  1. Multifrequency, single pass free electron laser

    DOE Patents [OSTI]

    Szoke, Abraham (Fremont, CA); Prosnitz, Donald (Walnut Creek, CA)

    1985-01-01

    A method for simultaneous amplification of laser beams with a sequence of frequencies in a single pass, using a relativistic beam of electrons grouped in a sequence of energies corresponding to the sequence of laser beam frequencies. The method allows electrons to pass from one potential well or "bucket" to another adjacent bucket, thus increasing efficiency of trapping and energy conversion.

  2. PUBLIC ADMINISTRATION COLORADO GOLDEN FIELD OFFICE POC Karen Downs

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on DeliciousMathematicsEnergyInterested PartiesBuilding energy codes havePUBLIC ADMINISTRATION COLORADO GOLDEN FIELD

  3. U-PASS DISTRIBUTION SCHEDULE About the Fall 2015 U-Pass

    E-Print Network [OSTI]

    registration status. Students enrolled part-time or in TGS 512 will not be eligible for a U-Pass. Should you have any questions, please see the U-Pass FAQ or contact tgs-u- pass@northwestern.edu. #12;

  4. Determination of the minority carrier diffusion length in compositionally graded Cu,,In,Ga...Se2 solar cells using electron beam induced

    E-Print Network [OSTI]

    Wu, Junqiao

    , USA 2 National Renewable Energy Laboratory, Golden, Colorado 80401, USA 3 Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA 4 Division of Materials,Ga Se2 solar cells using energy dependent electron beam induced current. Gallium composition gradients

  5. Building Commissioning: A Golden Opportunity for Reducing Energy Costs and Greenhouse-gas Emissions

    E-Print Network [OSTI]

    Mills, Evan

    2010-01-01

    of Building Faults and Energy Savings Potential: FinalGOLDEN OPPORTUNITY FOR SAVING ENERGY, MONEY, AND GREENHOUSEis an underutilized strategy for saving energy and money and

  6. Golden Bars of Consensus and the Truth Quark

    E-Print Network [OSTI]

    Frank D. Tony Smith; jr

    2002-05-14

    Scientists are imprisoned by Golden Bars of Consensus, says Burton Richter (hep-ex/0001012). A case in point is the mass of the Truth Quark. The consensus analysis of the experimental data indicates that the mass of the Truth Quark is about 170 GeV. On the other hand, an alternative analysis of the same data indicates that the mass of the Truth Quark is about 130 GeV. If the design of future experiments, including trigger, event selection, data analysis procedures, error analysis, etc., takes into account only the consensus value, and if the consensus value happens to be incorrect, then results of future experiments might be compromised.

  7. Golden Hills, California: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View New Pages RecentPlantMagma Energy GroupDOE Golden Field Office)Hills,

  8. Golden Spread Electric Cooperative, Inc. Smart Grid Project | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View New Pages RecentPlantMagma Energy GroupDOE Golden

  9. Golden Spread Panhandle Wind Ranch | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View New Pages RecentPlantMagma Energy GroupDOE GoldenPanhandle Wind Ranch

  10. Federal Energy Management Program Golden Field Office Contacts | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative Fuelsof Energy Services » ProgramPolicy and Guidance » Humanof Energy Golden

  11. A NEURAL NETWORK UNDERLYING INDIVIDUAL DIFFERENCES IN EMOTION AND AGGRESSION IN MALE GOLDEN HAMSTERS

    E-Print Network [OSTI]

    Delville, Yvon

    A NEURAL NETWORK UNDERLYING INDIVIDUAL DIFFERENCES IN EMOTION AND AGGRESSION IN MALE GOLDEN, Austin, TX 78712, USA Abstract--In rodents, aggressive behavior can be altered by experimental a common neural network. Male golden hamsters were first screened for offensive aggression. Then

  12. Golden Mountains The Altai Republic in the Russian Federation Kyoto University Research Reactor Institute Kobayashi Tooru

    E-Print Network [OSTI]

    Taskaev, Sergey Yur'evich

    1 Golden Mountains ­ The Altai Republic in the Russian Federation Kyoto University Research Reactor Institute Kobayashi Tooru It is said that Altai also means golden mountains. The development to these mountains easier especially during the warm summer season. Being geographically located at the central

  13. Extracting Effective Higgs Couplings in the Golden Channel

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chen, Yi; Vega-Morales, Roberto

    2014-04-08

    Kinematic distributions in Higgs decays to four charged leptons, the so called ‘golden channel, are a powerful probe of the tensor structure of its couplings to neutral electroweak gauge bosons. In this study we construct the first part of a comprehensive analysis framework designed to maximize the information contained in this channel in order to perform direct extraction of the various possible Higgs couplings. We first complete an earlier analytic calculation of the leading order fully differential cross sections for the golden channel signal and background to include the 4e and 4? final states with interference between identical final states.more »We also examine the relative fractions of the different possible combinations of scalar-tensor couplings by integrating the fully differential cross section over all kinematic variables as well as show various doubly differential spectra for both the signal and background. From these analytic expressions we then construct a ‘generator level’ analysis framework based on the maximum likelihood method. Then, we demonstrate the ability of our framework to perform multi-parameter extractions of all the possible effective couplings of a spin-0 scalar to pairs of neutral electroweak gauge bosons including any correlations. Furthermore, this framework provides a powerful method for study of these couplings and can be readily adapted to include the relevant detector and systematic effects which we demonstrate in an accompanying study to follow.« less

  14. Two former longtime employees pass away | The Ames Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    employees pass away Former Ames Laboratory metallurgy program chair John (Jack) Smith of Ames passed away Sept. 26 and long-time facilities plumber Pat Stowell of Boone,...

  15. Message passing with parallel queue traversal

    DOE Patents [OSTI]

    Underwood, Keith D. (Albuquerque, NM); Brightwell, Ronald B. (Albuquerque, NM); Hemmert, K. Scott (Albuquerque, NM)

    2012-05-01

    In message passing implementations, associative matching structures are used to permit list entries to be searched in parallel fashion, thereby avoiding the delay of linear list traversal. List management capabilities are provided to support list entry turnover semantics and priority ordering semantics.

  16. ELEC 225: Lab 5 Low Pass Filters

    E-Print Network [OSTI]

    Kozick, Richard J.

    frequencies than at high frequencies is a low-pass filter. A circuit that has a larger output at high generator for sine-wave output with an amplitude of 2V peak-to-peak. Connect Channel 1 of the `scope to measure the output of the function generator. Connect Channel 2 to measure the voltage across

  17. Golden Vision: 50 years of the University of Kansas East Asian Collection

    E-Print Network [OSTI]

    Doll, Vickie

    2007-10-01

    stream_size 1760 stream_content_type text/plain stream_name Doll_Golden Vision.pdf.txt stream_source_info Doll_Golden Vision.pdf.txt Content-Encoding UTF-8 Content-Type text/plain; charset=UTF-8 Vickie Fu Doll Chinese... and Korean Studies Librarian International Area Studies University of Kansas Libraries vdoll@ku.edu · http://guides.lib.ku.edu/profile/vdoll Doll, V. (2007). Golden Vision: 50 Years of the University of Kansas East Asian Collection. In Over a Hundred...

  18. Thermoregulatory Behavior in Infant Norway Rats (Rattus norvegicus) and Syrian Golden Hamsters (Mesocricetus auratus)

    E-Print Network [OSTI]

    Thermoregulatory Behavior in Infant Norway Rats (Rattus norvegicus) and Syrian Golden Hamsters). In contrast to hamsters, infant Norway rats are capable of producing heat using brown adipose tissue (BAT

  19. Agenda for the PV Module Reliability Workshop, February 26- 27 2013, Golden, Colorado

    Office of Energy Efficiency and Renewable Energy (EERE)

    This document is the agenda and poster session information for the NREL 2013 Photovoltaic Module Reliability Workshop, held on February 26-27, 2013 at the National Renewable Energy Laboratory in Golden, CO.

  20. Factors contributing to nest predation within habitat of the Golden-checked Warbler, Travis County, Texas 

    E-Print Network [OSTI]

    Fink, Mark Lewis

    1996-01-01

    artificial nests, simulating those of Golden-cheeked Warblers, along 200 transacts at 5 study sites in Travis County, Texas. This study was designed to determine if differential levels of predation existed between nests placed in forest interior tracts...

  1. Improving the nutritional value of Golden Rice through increased pro-vitamin A content

    E-Print Network [OSTI]

    Noble, William Stafford

    -sustaining. Golden Rice is the name coined to describe the genetically modified rice1 that produces carotenoids of the grain (endosperm). Providing pro-vitamin A in a staple food such as rice could be a simple and effective

  2. Abundance and distribution of potential arthropod prey species in a typical Golden cheeked Warbler habitat 

    E-Print Network [OSTI]

    Quinn, Michael Andrew

    2000-01-01

    Arthropods have diverse functions in ecosystems, including providing food for resident breeding birds. The Golden-cheeked Warbler, Dendroica chrysoparia Sclater & Salvin is an endangered insectivorus song bird that nests ...

  3. Waterfront developments in the Middle East case study : the Golden Horn Project, Istanbul, Turkey

    E-Print Network [OSTI]

    Alamuddin, Hana S. (Hana Slieman)

    1987-01-01

    This thesis examines waterfront developments in the Middle East . It concentrates on the Golden Horn project in Istanbul as it raises a number of issues that are central to any such development in that region. In order for ...

  4. The Impact of a Forest Pathogen on the Endangered Golden-cheeked Warbler 

    E-Print Network [OSTI]

    Stewart, Laura Roe

    2012-07-16

    OF A FOREST PATHOGEN ON THE ENDANGERED GOLDEN-CHEEKED WARBLER A Thesis by LAURA ROE STEWART Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment of the requirements for the degree of MASTER... OF SCIENCE May 2012 Major Subject: Wildlife and Fisheries Sciences The Impact of a Forest Pathogen on the Endangered Golden-cheeked Warbler Copyright 2012 Laura Roe Stewart THE IMPACT OF A FOREST...

  5. Astor Pass Geothermal Area | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLC Jump to: navigation,SummariesAshmanlaCommercialEnergyAstor Pass

  6. TerraPass Inc | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EISTJ Automation JumpSet RenewableFuelStandardsourceTerraPass Inc Jump

  7. Patterson Pass Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsourceII JumpQuarterly Smart GridNorth Carolina:ParamountEnergy Group LP Jump to:Pass

  8. Two antenna, two pass interferometric synthetic aperture radar

    DOE Patents [OSTI]

    Martinez, Ana; Doerry, Armin W.; Bickel, Douglas L.

    2005-06-28

    A multi-antenna, multi-pass IFSAR mode utilizing data driven alignment of multiple independent passes can combine the scaling accuracy of a two-antenna, one-pass IFSAR mode with the height-noise performance of a one-antenna, two-pass IFSAR mode. A two-antenna, two-pass IFSAR mode can accurately estimate the larger antenna baseline from the data itself and reduce height-noise, allowing for more accurate information about target ground position locations and heights. The two-antenna, two-pass IFSAR mode can use coarser IFSAR data to estimate the larger antenna baseline. Multi-pass IFSAR can be extended to more than two (2) passes, thereby allowing true three-dimensional radar imaging from stand-off aircraft and satellite platforms.

  9. National Wind Technology Center sitewide, Golden, CO: Environmental assessment

    SciTech Connect (OSTI)

    1996-11-01

    The National Renewable Energy Laboratory (NREL), the nation`s primary solar and renewable energy research laboratory, proposes to expand its wind technology research and development program activities at its National Wind Technology Center (NWTC) near Golden, Colorado. NWTC is an existing wind energy research facility operated by NREL for the US Department of Energy (DOE). Proposed activities include the construction and reuse of buildings and facilities, installation of up to 20 wind turbine test sites, improvements in infrastructure, and subsequent research activities, technology testing, and site operations. In addition to wind turbine test activities, NWTC may be used to support other NREL program activities and small-scale demonstration projects. This document assesses potential consequences to resources within the physical, biological, and human environment, including potential impacts to: air quality, geology and soils, water resources, biological resources, cultural and historic resources, socioeconomic resources, land use, visual resources, noise environment, hazardous materials and waste management, and health and safety conditions. Comment letters were received from several agencies in response to the scoping and predecisional draft reviews. The comments have been incorporated as appropriate into the document with full text of the letters contained in the Appendices. Additionally, information from the Rocky Flats Environmental Technology Site on going sitewide assessment of potential environmental impacts has been reviewed and discussed by representatives of both parties and incorporated into the document as appropriate.

  10. Bird Mortaility at the Altamont Pass Wind Resource Area: March 1998--September 2001

    SciTech Connect (OSTI)

    Smallwood, K. S.; Thelander, C. G.

    2005-09-01

    Over the past 15 years, research has shown that wind turbines in the Altamont Pass Wind Resource Area (APWRA) kill many birds, including raptors, which are protected by the Migratory Bird Treaty Act (MBTA), the Bald and Golden Eagle Protection Act, and/or state and federal Endangered Species Acts. Early research in the APWRA on avian mortality mainly attempted to identify the extent of the problem. In 1998, however, the National Renewable Energy Laboratory (NREL) initiated research to address the causal relationships between wind turbines and bird mortality. NREL funded a project by BioResource Consultants to perform this research directed at identifying and addressing the causes of mortality of various bird species from wind turbines in the APWRA.With 580 megawatts (MW) of installed wind turbine generating capacity in the APWRA, wind turbines there provide up to 1 billion kilowatt-hours (kWh) of emissions-free electricity annually. By identifying and implementing new methods and technologies to reduce or resolve bird mortality in the APWRA, power producers may be able to increase wind turbine electricity production at the site and apply similar mortality-reduction methods at other sites around the state and country.

  11. A Mountain Pass for Reacting Molecules Mathieu LEWIN

    E-Print Network [OSTI]

    A Mountain Pass for Reacting Molecules Mathieu LEWIN CEREMADE, CNRS UMR 7534, Universit'e Paris IX nuclei, and look for a mountain pass point between the two minima in the non­relativistic Schr by the mountain pass method are not compact. This enables us to identify precisely the possible values

  12. Design of the polarization multi-pass Thomson scattering system

    SciTech Connect (OSTI)

    Yasuhara, R.; Yamada, I.; Kawahata, K.; Funaba, H. [National Institute for Fusion Science, 322-6 Oroshi-cho, Toki, Gifu 509-5292 (Japan); Yoshikawa, M.; Morimoto, M.; Shima, Y.; Kohagura, J.; Sakamoto, M.; Nakashima, Y.; Imai, T. [Plasma Research Center, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan); Minami, T. [Institute of Advanced Energy, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan)

    2012-10-15

    A novel configuration of the multi-pass Thomson scattering (TS) system is proposed to improve the time resolution and accuracy of electron temperature measurements by use of a polarization control technique. This configuration can realize a perfect coaxial multi-passing at each pass, and the number of round trips is not limited by the optical configuration. To confirm the feasibility of the new method, we installed this system in the GAMMA 10 plasma system. As a result, the integrated scattering signal of the double-pass configuration is about two times larger than that of the single-pass configuration. These results are in good agreement with the design.

  13. Quantum Monte Carlo by message passing

    SciTech Connect (OSTI)

    Bonca, J.; Gubernatis, J.E.

    1993-01-01

    We summarize results of quantum Monte Carlo simulations of the degenerate single-impurity Anderson model using the impurity algorithm of Hirsch and Fye. Using methods of Bayesian statistical inference, coupled with the principle of maximum entropy, we extracted the single-particle spectral density from the imaginary-time Green's function. The variations of resulting spectral densities with model parameters agree qualitatively with the spectral densities predicted by NCA calculations. All the simulations were performed on a cluster of 16 IBM R6000/560 workstations under the control of the message-passing software PVM. We described the trivial parallelization of our quantum Monte Carlo code both for the cluster and the CM-5 computer. Other issues for effective parallelization of the impurity algorithm are also discussed.

  14. Quantum Monte Carlo by message passing

    SciTech Connect (OSTI)

    Bonca, J.; Gubernatis, J.E.

    1993-05-01

    We summarize results of quantum Monte Carlo simulations of the degenerate single-impurity Anderson model using the impurity algorithm of Hirsch and Fye. Using methods of Bayesian statistical inference, coupled with the principle of maximum entropy, we extracted the single-particle spectral density from the imaginary-time Green`s function. The variations of resulting spectral densities with model parameters agree qualitatively with the spectral densities predicted by NCA calculations. All the simulations were performed on a cluster of 16 IBM R6000/560 workstations under the control of the message-passing software PVM. We described the trivial parallelization of our quantum Monte Carlo code both for the cluster and the CM-5 computer. Other issues for effective parallelization of the impurity algorithm are also discussed.

  15. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  16. 1.Physics Department, Colorado School of Mines, Golden, CO 2. National Renewable Energy Laboratory, Golden, CO 3. United Solar Ovonic, LLC Troy, MI, United States THERMAL ACTIVATION OF DEEP OXYGEN DEFECT FORMATION AND HYDROGEN EFFUSION

    E-Print Network [OSTI]

    1.Physics Department, Colorado School of Mines, Golden, CO 2. National Renewable Energy Laboratory, Golden, CO 3. United Solar Ovonic, LLC Troy, MI, United States BACKGROUND THERMAL ACTIVATION OF DEEP was partially supported by a DOE grant through United Solar Ovonics, Inc., under the Solar America Initiative

  17. The Golden-Thompson inequality: Historical aspects and random matrix applications

    SciTech Connect (OSTI)

    Forrester, Peter J. Thompson, Colin J.

    2014-02-15

    The Golden-Thompson inequality, Tr?(e{sup A+B}) ? Tr?(e{sup A}e{sup B}) for A, B Hermitian matrices, appeared in independent works by Golden and Thompson published in 1965. Both of these were motivated by considerations in statistical mechanics. In recent years the Golden-Thompson inequality has found applications to random matrix theory. In this article, we detail some historical aspects relating to Thompson's work, giving in particular a hitherto unpublished proof due to Dyson, and correspondence with Pólya. We show too how the 2 × 2 case relates to hyperbolic geometry, and how the original inequality holds true with the trace operation replaced by any unitarily invariant norm. In relation to the random matrix applications, we review its use in the derivation of concentration type lemmas for sums of random matrices due to Ahlswede-Winter, and Oliveira, generalizing various classical results.

  18. Analysis of Best Hydraulic Fracturing Practices in the Golden Trend Fields of Oklahoma Shahab D. Mohaghegh, West Virginia University

    E-Print Network [OSTI]

    Mohaghegh, Shahab

    Analysis of Best Hydraulic Fracturing Practices in the Golden Trend Fields of Oklahoma Shahab D of optimized hydraulic fracturing procedure. Detail stimulation data from more than 230 wells in the Golden of hydraulic fractures. Therefore, it is highly recommended that the clastic and carbonate formations

  19. EA-1845: Sabine Pass Liquefaction Project, Cameron County, LA

    Broader source: Energy.gov [DOE]

    DOE participated as a cooperating agency with the Federal Energy Regulatory Commission (FERC) in preparing an EA for the Sabine Pass Liquefaction Project to analyze the potential environmental impacts associated with applications submitted by Sabine Pass Liquefaction, LLC, and Sabine Pass LNG, L.P., to FERC and to DOE’s Office of Fossil Energy (FE) seeking authorization to site, construct, and operate liquefaction and export facilities at the existing Sabine Pass LNG Terminal in Cameron Parish, Louisiana. DOE adopted FERC’s EA and issued a finding of no significant impact on August 7, 2012.

  20. Consider Installing Turbulators on Two- and Three-Pass Firetube...

    Broader source: Energy.gov (indexed) [DOE]

    Three-Pass Firetube Boilers (January 2012) More Documents & Publications Clean Boiler Waterside Heat Transfer Surfaces CIBO Energy Efficiency Handbook Reverse Osmosis Optimization...

  1. EIS-0510: Calcasieu Pass Project, Cameron Parish, Louisiana ...

    Energy Savers [EERE]

    potential environmental impacts of the Calcasieu Pass Project, a proposed liquefied natural gas (LNG) export terminal in Cameron Parish, Louisiana. DOE is a cooperating agency...

  2. Issuance, Control and Use of Badges, Passes and Credentials

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    1988-02-03

    The order establishes and prescribes DOE policies and procedures for the issuance. control. and use of badges. passes, and credentials. Cancels DOE 5631.3.

  3. Issuance, Control and Use of Badges, Passes, and Credentials

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    1988-12-19

    The change provides clarification of badges and passes used for escorted visitors into DOE facilities. Chg 1, dated 12-19-88

  4. Consider Installing Turbulators on Two- and Three-Pass Firetube...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    on Two- and Three-Pass Firetube Boilers Firetube Boilers The packaged firetube boiler is the most common boiler design used to provide heating or process steam in...

  5. PIA - WEB iPASS System DOE PIA | Department of Energy

    Energy Savers [EERE]

    PIA - WEB iPASS System DOE PIA PIA - WEB iPASS System DOE PIA PIA - WEB iPASS System DOE PIA PDF icon PIA - WEB iPASS System DOE PIA More Documents & Publications PIA - INL...

  6. Date: 31 March 2009 To: Lead Cluster Deans: Gilles Bousquet, Adam Gamoran, Robert Golden, Molly Jahn,

    E-Print Network [OSTI]

    Sheridan, Jennifer

    Date: 31 March 2009 To: Lead Cluster Deans: Gilles Bousquet, Adam Gamoran, Robert Golden, Molly that you launch internal program reviews of the individual cluster programs for which you serve as Lead Dean. In a separate attached document, you will find a list of clusters with their lead deans

  7. Avian Response to Road Construction Noise with Emphasis on the Endangered Golden-cheeked Warbler 

    E-Print Network [OSTI]

    Lackey, Melissa A.

    2011-08-08

    of construction noise on reproductive success and territory selection of golden-cheeked warblers (Dendroica chrysoparia) at 3 sites: adjacent to road construction, adjacent to road-noise only, and a control with no noise or construction activity. I also examined...

  8. Systemwide Risk Management and Public Safety 401 Golden Shore, 5th Floor

    E-Print Network [OSTI]

    de Lijser, Peter

    Systemwide Risk Management and Public Safety 401 Golden Shore, 5th Floor Long Beach, CA 90802 in this self-insured program. The Office of Risk Management in the Chancellor's Office administers the general liability, workers' compensation, property, and professional liability programs. The State Office of Risk

  9. Age Structure of Golden-cheeked Warblers in Areas of Low Abundance 

    E-Print Network [OSTI]

    Pruett, Hannah L

    2014-08-05

    . I examined the age structure of golden-cheeked warblers in areas of low abundance to determine if there are patterns of differential habitat use based on age in this species. Over two breeding seasons, I monitored 13 low-density and 10 high...

  10. BREEDING BIOLOGY OF THE GOLDEN-FACED TYRANNULET (ZIMMERIUS CHRYSOPS) IN VENEZUELA

    E-Print Network [OSTI]

    Martin, Thomas E.

    BREEDING BIOLOGY OF THE GOLDEN-FACED TYRANNULET (ZIMMERIUS CHRYSOPS) IN VENEZUELA WILLIAM GOULDING1 Park, Venezuela during the 2002 to 2008 breeding seasons. The enclosed nest was similar to descriptions, it is broadly distributed with a range that extends from Peru, north through the Andes to Colombia and Venezuela

  11. A review of "Dutch Culture in the Golden Age" by J. L. Price 

    E-Print Network [OSTI]

    Cruz, Laura

    2012-01-01

    with conservatism and censorship; and all of these debates took place in public places, in the pamphlet literature, in university classrooms, in cafes and living rooms, and in town squares. It was this tension, argues Price, which gave the Golden Age its...

  12. DOES PHOSPHATE TREATMENT FOR PREVENTION OF EUTROPHICATION PASS

    E-Print Network [OSTI]

    Bateman, Ian J.

    , eutrophication, pollution. #12;1 1. INTRODUCTION The eutrophication of water bodies is a natural phenomenonDOES PHOSPHATE TREATMENT FOR PREVENTION OF EUTROPHICATION PASS THE BENEFIT-COST TEST? by Ian Subramanian CSERGE Working Paper EDM 06-13 #12;Does phosphate treatment for prevention of eutrophication pass

  13. Performance of a double pass solar air collector

    SciTech Connect (OSTI)

    Ramani, B.M.; Gupta, Akhilesh; Kumar, Ravi

    2010-11-15

    Double pass counter flow solar air collector with porous material in the second air passage is one of the important and attractive design improvement that has been proposed to improve the thermal performance. This paper presents theoretical and experimental analysis of double pass solar air collector with and without porous material. A mathematical model has been developed based on volumetric heat transfer coefficient. Effects of various parameters on the thermal performance and pressure drop characteristics have been discussed. Comparison of results reveals that the thermal efficiency of double pass solar air collector with porous absorbing material is 20-25% and 30-35% higher than that of double pass solar air collector without porous absorbing material and single pass collector respectively. (author)

  14. Theoretical Examination of Passing Sight Distance in Three Dimensions with Application to Marking No-Passing Zones 

    E-Print Network [OSTI]

    Azimi, Mehdi 1974-

    2012-12-11

    the process for locating no-passing zones using global positioning system (GPS) data. The author developed a new analytical algorithm to evaluate three-dimensional passing sight distances that will work for any arbitrary alignment of two-lane highway...

  15. Oral Probiotic Microcapsule Formulation Ameliorates Non-Alcoholic Fatty Liver Disease in Bio F1B Golden Syrian Hamsters

    E-Print Network [OSTI]

    Bhathena, Jasmine; Martoni, Christopher; Kulamarva, Arun; Tomaro-Duchesneau, Catherine; Malhotra, Meenakshi; Paul, Arghya; Urbanska, Aleksandra Malgorzata; Prakash, Satya

    2013-03-12

    The beneficial effect of a microencapsulated feruloyl esterase producing Lactobacillus fermentum ATCC 11976 formulation for use in non-alcoholic fatty liver disease (NAFLD) was investigated. For which Bio F1B Golden Syrian hamsters were fed a...

  16. EA-0995: Drum Storage Facility for Interim Storage of Materials Generated by Environmental Restoration Operations, Golden, Colorado

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts of the proposal to construct and operate a drum storage facility at the U.S. Department of Energy's Rocky Flats Environmental Technology Site in Golden,...

  17. Design considerations for band-pass sigma-delta modulators 

    E-Print Network [OSTI]

    Singh, Pavan Kumar

    2001-01-01

    Traditionally, the design of band-pass sigma-delta modulators is composed of two steps, the first at the system level and the second at the transistor level. The transition from the system level to the transistor level ...

  18. Sabine Pass Liquefaction, LLC- Dkt. No 15-63-LNG

    Broader source: Energy.gov [DOE]

    The Office of Fossil Energy gives notice of receipt of an Application filed on April 20, 2015, by Sabine Pass Liquefaction, LLC (SPL), seeking long-term multi-contract authorization to export...

  19. Porn, Pedagogy, and the Passing of an Icon

    E-Print Network [OSTI]

    Ward, Anna E.

    2010-01-01

    by A n n a E . Wa r d Porn, Pedagogy, and the Passing of anoverlaps with the field of porn studies and as a teacher,common within the field of porn studies itself. This is

  20. Order 3669: Sabine Pass Liquefaction, LLC | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    FROM THE SABINE PASS LNG TERMINAL LOCATED IN THE CAMERON PARISH, LOUISIANA, TO NON-FREE TRADE AGREEMENT NATIONS Based on a review of the complete record and for the reasons set...

  1. Thin-disk laser multi-pass amplifier

    E-Print Network [OSTI]

    Schuhmann, K; Graf, T; Hänsch, T W; Kirch, K; Kottmann, F; Pohl, R; Taqqu, D; Voß, A; Weichelt, B; Antognini, A

    2015-01-01

    In the context of the Lamb shift measurement in muonic helium we developed a thin-disk laser composed of a Q-switched oscillator and a multi-pass amplifier delivering pulses of 150 mJ at a pulse duration of 100 ns. Its peculiar requirements are stochastic trigger and short delay time (power scaling with high efficiency. However the single pass gain is small (about 1.2). Hence a multi-pass scheme with precise mode matching for large beam waists (w = 2 mm) is required. Instead of using the standard 4f design, we have developed a multi-pass amplifier with a beam propagation insensitive to thermal lens effects and misalignments. The beam propagation is equivalent to multiple roundtrips in an optically stable resonator. To support the propagation we used an array of 2 x 8 individually adjustable plane mirrors. Astigmatism has been minimized by a compact mirror placement. Precise alignment of the kinematic arra...

  2. Bacon’s “Serious Satire” of the Church and the “Golden Mediocrity” of Induction 

    E-Print Network [OSTI]

    Kenneth Alan Hovey

    2003-01-01

    ESSAY 1 Bacon?s ?Serious Satire? of the Church and the ?Golden Mediocrity? of Induction Kenneth Alan Hovey University of Texas at San Antonio It is as a reformer of natural philosophy rather than of the church that Francis Bacon is best known... Science: The Merton Thesis (Brunswick, NJ: Rutgers Uni- versity Press, 1990). 2. Julian Martin, Francis Bacon, the State, and the Reform of Natural Philosophy (Cambridge: Cambridge University Press, 1992), 24, 29-33; and Brian Vickers, Francis Bacon...

  3. "A transit pass in everyone's hand?" : implementing Unlimited Access Pass programs as a strategy to increase transit ridership

    E-Print Network [OSTI]

    Hester, Ursula, 1971-

    2004-01-01

    (cont.) ridership growth induced by UAP programs. The lessons learned are then applied in form of a university pass program at the MBTA in Boston, suggesting program designs, pricing alternatives and estimating impacts on ...

  4. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

    2010-11-15

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In{sub 0.33}Ga{sub 0.67}N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm{sup 2} at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm{sup 2}. These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  5. Standards for message-passing in a distributed memory environment

    SciTech Connect (OSTI)

    Walker, D.W.

    1992-08-01

    This report presents a summary of the main ideas presented at the First CRPC Work-shop on Standards for Message Passing in a Distributed Memory Environment, held April 29-30, 1992, in Williamsburg, Virginia. This workshop attracted 68 attendees including representative from major hardware and software vendors, and was the first in a series of workshops sponsored by the Center for Research on Parallel Computation. The aim of this series of workshops is to develop and implement a standard for message passing on distributed memory concurrent computers, thereby making it easier to develop efficient, portable application codes for such machines. The report discusses the main issues raised in the CRPC workshop, and describes proposed desirable features of a message passing standard for distributed memory environments.

  6. Validation of the G-PASS code : status report.

    SciTech Connect (OSTI)

    Vilim, R. B.; Nuclear Engineering Division

    2009-03-12

    Validation is the process of determining whether the models in a computer code can describe the important phenomena in applications of interest. This report describes past work and proposed future work for validating the Gas Plant Analyzer and System Simulator (G-PASS) code. The G-PASS code was developed for simulating gas reactor and chemical plant system behavior during operational transients and upset events. Results are presented comparing code properties, individual component models, and integrated system behavior against results from four other computer codes. Also identified are two experiment facilities nearing completion that will provide additional data for individual component and integrated system model validation. The main goal of the validation exercise is to ready a version of G-PASS for use as a tool in evaluating vendor designs and providing guidance to vendors on design directions in nuclear-hydrogen applications.

  7. A generalized message-passing mechanism for communicating sequential processes

    SciTech Connect (OSTI)

    Lenders, P.M.

    1988-06-01

    Bidirectional message-passing (bi-io), a new symmetric communication mechanism for concurrent processes is introduced and developed. The mechanism is symmetric in the sense that, in one atomic action, a message is transmitted in each direction between two processes. For some applications (tree structure, systolic arrays), this method is shown to have several advantages over conventional synchronization and communication primitives (mainly conciseness of programs, absence of certain types of deadlock). The mechanism is rigorously defined with a CSP-like syntax and a weakest precondition semantics. Two systolic arrays are developed using bidirectional message-passing: a matrix-vector multiplier, and a palindrome recognizer.

  8. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  9. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer the radiative recombination rates across the active region. Consequently, the light output power was enhanced

  10. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  11. From Continuation Passing Style to Krivine's Abstract Machine

    E-Print Network [OSTI]

    Selinger, Peter

    From Continuation Passing Style to Krivine's Abstract Machine Peter Selinger Department different extensions of typed lambda calculus, how the rules for a version of Krivine's abstract machine can-in types and primitive functions. We also show how Krivine's abstract machine can be implemented

  12. From Continuation Passing Style to Krivine's Abstract Machine

    E-Print Network [OSTI]

    Selinger, Peter

    From Continuation Passing Style to Krivine's Abstract Machine Peter Selinger Department different extensions of typed lambda calculus, how the rules for a version of Krivine's abstract machine can­in types and primitive functions. We also show how Krivine's abstract machine can be implemented

  13. Graphic: FL Dept. of Environmental Protection Please pass the Salt!!

    E-Print Network [OSTI]

    Graphic: FL Dept. of Environmental Protection Please pass the Salt!! Mangroves are a very unique protruding from the tree trunk and branches. These prop roots are special because they exclude salt from actually absorb saltwater through their roots, but have specially designed leaves with salt glands

  14. Access via Science Online Site Pass ARTIFICIAL INTELLIGENCE

    E-Print Network [OSTI]

    Duckett, Tom

    Access via Science Online Site Pass ARTIFICIAL INTELLIGENCE: Autonomous Mental Development of an adult brain, such as vision, speech, and language. Nevertheless, these traditional approaches have." A Definition What is autonomous mental development? With time, a brainlike natural or an artificial embodied

  15. CPV Cell Characterization Following One-Year Exposure in Golden, Colorado: Preprint

    SciTech Connect (OSTI)

    Bosco, N.; Kurtz, S.

    2014-08-01

    A CPV module containing 30 III-V multijunction cells was operated on?sun for one year in Golden, Colorado. Each cell was characterized prior to and following exposure. A module power degradation of 10% was observed and found to be a result as an overall decrease in cell short circuit current and the presence of at least one shunted cell. A positive correlation between initial shunt current and an increase in shunt current following exposure was also found. Cell exfoliation was also observed and found to be coincident with the presence of water and/or charring of the cell package due to an off-sun event.

  16. This report summarizes and compares the functionality of several portable message passing libraries. A message passing library contains explicit communication primitives

    E-Print Network [OSTI]

    Yelick, Katherine

    communication interface on different types of machines. We survey ten message passing libraries, most of which libraries. A message passing library contains explicit communication primitives for the exchange of messages among computing processes. A portable message passing library further attempts to provide a uniform

  17. Testing a GaAs cathode in SRF gun

    SciTech Connect (OSTI)

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-03-28

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating gradient of the RF guns, potentially offering a long lived cathode with very low emittance. Testing this concept requires preparation of the cathode, transportation to the SRF gun and evaluation of the performance of the cathode and the gun at cryogenic temperatures. In our work at BNL, we successfully activated the bulk GaAs in the preparation chamber. The highest quantum efficient was 10% at 532 nm that fell to 0.5% after 100 hours. We explored three different ways to activate the GaAs. We verified that the GaAs photocathode remains stable for 30 hours in a 10{sup -11} Torr vacuum. Passing the photocathode through the low 10{sup -9} Torr transfer section in several seconds caused the QE to drop to 0.8%. The photocathode with 0.8% QE can be tested for the SRF gun. The gun and beam pipe were prepared and assembled. After baking at 200 C baking, the vacuum of the gun and beam pipe can sustain a low 10{sup -11} Torr at room temperature. The final test to extract electrons from the gun is ongoing. In this paper, we discuss our progress with this SRF gun and the results of the photocathode in preparation chamber and in magnet transfer line.

  18. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  19. Thermal efficiency of single-pass solar air collector

    SciTech Connect (OSTI)

    Ibrahim, Zamry; Ibarahim, Zahari; Yatim, Baharudin; Ruslan, Mohd Hafidz

    2013-11-27

    Efficiency of a finned single-pass solar air collector was studied. This paper presents the experimental study to investigate the effect of solar radiation and mass flow rate on efficiency. The fins attached at the back of absorbing plate to improve the thermal efficiency of the system. The results show that the efficiency is increased proportional to solar radiation and mass flow rate. Efficiency of the collector archived steady state when reach to certain value or can be said the maximum performance.

  20. Development of By-Pass Blending Station System 

    E-Print Network [OSTI]

    Liu, M.; Barnes, D.; Bunz, K.; Rosenberry, N.

    2003-01-01

    Temperature 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 30 40 50 60 70 80 90 100 Ambient Temeprature Ra ti o Load Ratio Power Savings Ratio W/O DP Reset Differential Pressure Ratio Power Savings With DP Reset ICEBO 2003, Development of By-pass Blending...

  1. GaAs MOEMS Technology

    SciTech Connect (OSTI)

    SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.; TIGGES, CHRIS P.; RENO, JOHN L.; PEAKE, GREGORY M.; KLEM, JOHN F.; LEAN, JEN; FULLER, CHARLES T.; BURKHART, JEFF; BAUER, THOMAS; SULLIVAN, CHARLES T.

    2003-03-01

    Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vital step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.

  2. Incentive Pass-through for Residential Solar Systems in California

    Broader source: Energy.gov [DOE]

    The deployment of solar photovoltaic (PV) systems has grown rapidly over the last decade, partly because of various government incentives. In the United States, those established in California are among the largest and longest-running incentives. Building on past research, this report addresses the still-unanswered question: to what degree have the direct PV incentives in California been passed along from installers to consumers? This report addresses this question by carefully examining the residential PV market in California and applying both a structural-modeling approach and a reduced-form regression analysis to estimate the incentive pass-through rate. The results suggest an average pass-through rate of direct incentives of nearly 100%, but with regional differences among California counties. While these results could have multiple explanations, they suggest a relatively competitive market and well-functioning subsidy program. Further analysis is required to determine whether similar results broadly apply to other states, to other customer segments, to all third-party-owned PV systems, or to all forms of financial incentives for solar.

  3. A compact double-pass Raman backscattering amplifier/compressor

    SciTech Connect (OSTI)

    Ren, J.; Li, S.; Morozov, A.; Suckewer, S.; Yampolsky, N. A.; Malkin, V. M.; Fisch, N. J.

    2008-05-15

    The enhancement of stimulated Raman backscattering (SRBS) amplification was demonstrated by introducing a plasma density gradient along the pump and the seed interaction path and by a novel double-pass design. The energy transfer efficiency was significantly improved to a level of 6.4%. The seed pulse was amplified by a factor of more than 20 000 from the input in a 2 mm long plasma, which also exceeded the intensity of the pump pulse by 2 orders of magnitude. This was accompanied by very effective pulse compression, from 500 fs to 90 fs in the first pass measurements and in the second pass down to approximately 50 fs, as it is indicated by the energy-pulse duration relation. Further improvements to the energy transfer efficiency and the SRBS performance by extending the region of resonance is also discussed where a uniform {approx}4 mm long plasma channel for SRBS was generated by using two subsequent laser pulses in an ethane gas jet.

  4. One pass core design of a super fast reactor

    SciTech Connect (OSTI)

    Liu, Qingjie; Oka, Yoshiaki

    2013-07-01

    One pass core design for Supercritical-pressure light water-cooled fast reactor (Super FR) is proposed. The whole core is cooled with upward flow in one through flow pattern like PWR. Compared with the previous two pass core design; this new flow pattern can significantly simplify the core concept. Upper core structure, coolant flow scheme as well as refueling procedure are as simple as in PWR. In one pass core design, supercritical-pressure water is at approximately 25.0 MPa and enters the core at 280 C. degrees and is heated up in one through flow pattern upwardly to the average outlet temperature of 500 C. degrees. Great density change in vertical direction can cause significant axial power offset during the cycle. Meanwhile, Pu accumulated in the UO{sub 2} fuel blanket assemblies also introduces great power increase during cycle, which requires large amount of flow for heat removal and makes the outlet temperature of blanket low at the beginning of equilibrium cycle (BOEC). To deal with these issues, some MOX fuel is applied in the bottom region of the blanket assembly. This can help to mitigate the power change in blanket due to Pu accumulation and to increase the outlet temperature of the blanket during cycle. Neutron transport and thermohydraulics coupled calculation shows that this design can satisfy the requirement in the Super FR principle for both 500 C. degrees outlet temperature and negative coolant void reactivity. (authors)

  5. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  6. Effect of dispersed crude oil exposure upon the aerobic metabolic scope in juvenile golden grey mullet (Liza aurata)

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1 Effect of dispersed crude oil exposure upon the aerobic metabolic scope in juvenile golden grey; CD: Chemically Dispersed oil using dispersant; D: Dispersant solution; MD: Mechanically Dispersed oil technique to oil spill. Through an experimental approach with juveniles of Liza aurata, the toxicity of five

  7. The Tang Prize A golden age of cosmopolitan culture, the high point of China's political power: the Tang Dynasty

    E-Print Network [OSTI]

    1 The Tang Prize A golden age of cosmopolitan culture, the high point of China's political power Development recognizes science and technology innovation relating to engineering, energy, environment works) recognizes the study of Sinology in a broad sense including research on China or related fields

  8. Molding of Three-Dimensional Microstructures of Gels Min D. Tang, Andrew P. Golden, and Joe Tien*

    E-Print Network [OSTI]

    Tien, Joe

    Molding of Three-Dimensional Microstructures of Gels Min D. Tang, Andrew P. Golden, and Joe Tien for microfabrication of gels: the use of poly(dimethylsiloxane) (PDMS) stamps to mold, release, and stack gels into 3D structures, and the use of surface modification to promote the release or adhesion of molded gels

  9. Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy

    SciTech Connect (OSTI)

    Chen, Yen-Ting [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China) [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China); Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden); Araki, Tsutomu [Department of Electrical and Electronic Engineering, Ritsumeikan University, 525-8577 Shiga (Japan)] [Department of Electrical and Electronic Engineering, Ritsumeikan University, 525-8577 Shiga (Japan); Palisaitis, Justinas; Persson, Per O. Å.; Olof Holtz, Per; Birch, Jens [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden)] [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden); Chen, Li-Chyong [Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan (China)] [Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan (China); Chen, Kuei-Hsien [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China) [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China); Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan (China); Nanishi, Yasushi [Global Innovation Research Organization, Ritsumeikan University, 525-8577 Shiga (Japan)] [Global Innovation Research Organization, Ritsumeikan University, 525-8577 Shiga (Japan)

    2013-11-11

    Nucleation mechanism of catalyst-free GaN nanorod grown on Si(111) is investigated by the fabrication of uniform and narrow (<35 nm) nanorods without a pre-defined mask by molecular beam epitaxy. Direct evidences show that the nucleation of GaN nanorods stems from the sidewall of the underlying islands down to the Si(111) substrate, different from commonly reported ones on top of the island directly. Accordingly, the growth and density control of the nanorods is exploited by a “narrow-pass” approach that only narrow nanorod can be grown. The optimal size of surrounding non-nucleation area around single nanorod is estimated as 88 nm.

  10. Computational analysis of thin film InGaAs/GaAs quantum well solar cells with

    E-Print Network [OSTI]

    Yu, Edward T.

    Computational analysis of thin film InGaAs/GaAs quantum well solar cells with back side light, Austin, TX 78758, USA * ety@ece.utexas.edu Abstract: Simulations of thin film (~2.5 µm thick) InGaAs/GaAs. Roberts, G. Hill, and C. Calder, "Progress in quantum well solar cells," Thin Solid Films 511­512, 76

  11. GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response

    E-Print Network [OSTI]

    Jalali. Bahram

    into existing multijunction cells either as a means to increase the current or efficiency by using low band gapGaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

  12. EA-1983: Sabine Pass Liquefaction Expansion Project, Cameron Parish, Louisiana

    Broader source: Energy.gov [DOE]

    The Federal Energy Regulatory Commission (FERC) is preparing an EA for a proposal to expand the existing Sabine Pass Liquefied Natural Gas Terminal in Cameron Parish, and to extend an associated existing pipeline system in Cameron, Calcasieu, Beauregard, Allen, and Evangeline Parishes in Louisiana. DOE is a cooperating agency in preparing the EA. DOE, Office of Fossil Energy, has an obligation under Section 3 of the Natural Gas Act to authorize the import and export of natural gas, including LNG, unless it finds that the import or export is not consistent with the public interest.

  13. Moose Pass, Alaska: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland: EnergyInformation MontanaOhio: EnergyMoodus,Pass, Alaska: Energy Resources

  14. Passing the baton | Y-12 National Security Complex

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeeding access| Department ofStephenSkinner, NathanielPartnershipPassing the baton

  15. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  16. Max-Min characterization of the mountain pass energy level for a class of variational problems

    E-Print Network [OSTI]

    Jacopo Bellazzini; Nicola Visciglia

    2009-09-01

    We provide a max-min characterization of the mountain pass energy level for a family of variational problems. As a consequence we deduce the mountain pass structure of solutions to suitable PDEs, whose existence follows from classical minimization argument.

  17. Sabine Pass Liquefaction, LLC FE Dkt. No 15-171-LNG

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Office of Fossil Energy (FE) of the Department of Energy (DOE) gives notice of receipt of an application (Application), filed on November 6, 2015, by Sabine Pass Liquefaction, LLC (Sabine Pass)...

  18. Time history analysis of axial forces (Pass Through Forces) at joints in a braced frame

    E-Print Network [OSTI]

    Paschini, Vincent

    2012-01-01

    As buildings keep getting taller, traditional braced lateral systems take more loads. This generates a phenomenon at every joint of a frame called "Pass Through Force". Pass through forces come from the transfer of axial ...

  19. A cryogenic circulating advective multi-pass absorption cell

    SciTech Connect (OSTI)

    Stockett, M. H.; Lawler, J. E. [Department of Physics, University of Wisconsin, 1150 University Avenue, Madison, Wisconsin 53706 (United States)

    2012-03-15

    A novel absorption cell has been developed to enable a spectroscopic survey of a broad range of polycyclic aromatic hydrocarbons (PAH) under astrophysically relevant conditions and utilizing a synchrotron radiation continuum to test the still controversial hypothesis that these molecules or their ions could be carriers of the diffuse interstellar bands. The cryogenic circulating advective multi-pass absorption cell resembles a wind tunnel; molecules evaporated from a crucible or injected using a custom gas feedthrough are entrained in a laminar flow of cryogenically cooled buffer gas and advected into the path of the synchrotron beam. This system includes a multi-pass optical White cell enabling absorption path lengths of hundreds of meters and a detection sensitivity to molecular densities on the order of 10{sup 7} cm{sup -3}. A capacitively coupled radio frequency dielectric barrier discharge provides ionized and metastable buffer gas atoms for ionizing the candidate molecules via charge exchange and the Penning effect. Stronger than expected clustering of PAH molecules has slowed efforts to record gas phase PAH spectra at cryogenic temperatures, though such clusters may play a role in other interstellar phenomena.

  20. Existence and L estimates of some mountain-pass type solutions

    E-Print Network [OSTI]

    Lisbon, University of

    Existence and L estimates of some mountain-pass type solutions J. M. Gomes Abstract We prove, the Mountain Pass Theorem of Ambrosetti and Rabinowitz (see [10]) has provided existence and multiplicity. The characterization of Mountain Pass type solutions became itself a sub- ject of interest. As examples one may cite

  1. A new branch of mountain pass solutions for the choreographical 3body problem

    E-Print Network [OSTI]

    A new branch of mountain pass solutions for the choreographical 3­body problem G. Arioli.terracini@unimib.it Abstract. We prove the existence of a new branch of solutions of Mountain Pass type for the periodic 3 on a bisection algorithm, we provide a numerical non­rigorous solution of Mountain Pass type for this problem

  2. Solution of a mountain pass problem for the isomerization of a molecule with one

    E-Print Network [OSTI]

    Solution of a mountain pass problem for the isomerization of a molecule with one free atom Mathieu atom, the latter having two distinct possible stable positions. We then look for a mountain pass point of a mountain pass point without any as­ sumption on the molecules at infinity, improving our previous results

  3. An Extensible Framework for Annotation-based Parameter Passing in Distributed Object Systems

    E-Print Network [OSTI]

    Ryder, Barbara G.

    An Extensible Framework for Annotation-based Parameter Passing in Distributed Object Systems Sriram Programming Copyright 2008, Sriram Gopal #12;An Extensible Framework for Annotation-based Parameter Passing in Distributed Object Systems Sriram Gopal (ABSTRACT) Modern distributed object systems pass remote parameters

  4. Signals Passed at Danger: A Case Study in the Application of Visualisation Techniques

    E-Print Network [OSTI]

    Johnson, Chris

    Signals Passed at Danger: A Case Study in the Application of Visualisation Techniques Fraser Speirs over 800,000 records. This paper presents the reporting of Signals Passed at Danger (SPAD) - the term used to describe an incident when a train passes a signal displaying a danger aspect without

  5. STUDY OF LOSS AND DELAY OF SALMON PASSING ROCK ISLAND DAM, COLUMBIA RIVER, 1954-56

    E-Print Network [OSTI]

    STUDY OF LOSS AND DELAY OF SALMON PASSING ROCK ISLAND DAM, COLUMBIA RIVER, 1954-56 By ROBERT R. PORTLAND. OREGON ABSTRACT To determine loss or delay of salmonids in passing Rock Island Dam tagged and released both above and below the dam in 1954-56. They were subsequently observed passing

  6. Proceedings of the 2002 U.S. DOE Hydrogen and Fuel Cells Annual Program/Lab R&D Review, May 6-10, 2002, Golden, Colorado.

    Broader source: Energy.gov [DOE]

    Proceedings of the US DOE Hydrogen Program, the Fuel Cells for Transportation Program, and the Fuels for Fuel Cells Program inaugural combined Annual Program/Lab R&D Review held May 6-10, 2002 in Golden, Colorado.

  7. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  8. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the k·p method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 Å. The joint density of states and optical absorption of a 40/40 Å GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  9. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  10. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  11. Skills Test 1 Prerequisite You must pass (at least 8/10) the prerequisite assignment by February 2. If you do not pass

    E-Print Network [OSTI]

    Yengulalp, Lynne

    Skills Test 1 Prerequisite You must pass (at least 8/10) the prerequisite assignment by February 2. If you do not pass the prerequisite assignment, you cannot take the Skills Test. Skills Test 1 You must take Skills Test 1 in class either on Monday, February 2 or Tuesday, February 3. I will email you

  12. Skills Test 2 Prerequisite You must pass (at least 8/10) the prerequisite assignment by February 16. If you do not pass

    E-Print Network [OSTI]

    Yengulalp, Lynne

    Skills Test 2 Prerequisite You must pass (at least 8/10) the prerequisite assignment by February 16. If you do not pass the prerequisite assignment, you cannot take the Skills Test. Skills Test 2 You must take Skills Test 2 in class either on Monday, February 16 or Tuesday, February 17. I

  13. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  14. Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    Gao, Feng, Ph. D. Massachusetts Institute of Technology

    2014-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

  15. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    director cds murder nudity soundtrack BBC movie releases footage worth documentary film Blu-rays Blu-ray Ga

  16. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  17. Leptogenesis in an SU(5) x A5 Golden Ratio Flavour Model

    E-Print Network [OSTI]

    Julia Gehrlein; Serguey T. Petcov; Martin Spinrath; Xinyi Zhang

    2015-05-16

    In this paper we discuss a minor modification of a previous SU(5) x A5 flavour model which exhibits at leading order golden ratio mixing and sum rules for the heavy and the light neutrino masses. Although this model could predict all mixing angles well it fails in generating a sufficient large baryon asymmetry via the leptogenesis mechanism. We repair this deficit here, discuss model building aspects and give analytical estimates for the generated baryon asymmetry before we perform a numerical parameter scan. Our setup has only a few parameters in the lepton sector. This leads to specific constraints and correlations between the neutrino observables. For instance, we find that in the model considered only the neutrino mass spectrum with normal mass ordering and values of the lightest neutrino mass in the interval 10-18 meV are compatible with the current data on the neutrino oscillation parameters. With the introduction of only one NLO operator, the model can accommodate successfully simultaneously even at 1$\\sigma$ level the current data on neutrino masses, on neutrino mixing and the observed value of the baryon asymmetry.

  18. Exponential Decay and Fermi's Golden Rule from an Uncontrolled Quantum Zeno Effect

    E-Print Network [OSTI]

    P. W. Bryant

    2014-10-14

    We modify the theory of the Quantum Zeno Effect to make it consistent with the postulates of quantum mechanics. This modification allows one, throughout a sequence of observations of an excited system, to address the nature of the observable and thereby to distinguish survival from non-decay, which is necessary whenever excited states are degenerate. As a consequence, one can determine which types of measurements can possibly inhibit the exponential decay of the system. We find that continuous monitoring taken as the limit of a sequence of ideal measurements will only inhibit decay in special cases, such as in well-controlled experiments. Uncontrolled monitoring of an unstable system, however, can cause exponentially decreasing non-decay probability at all times. Furthermore, calculating the decay rate for a general sequence of observations leads to a straightforward derivation of Fermi's Golden Rule, that avoids many of the conceptual difficulties normally encountered. When multiple decay channels are available, the derivation reveals how the total decay rate naturally partitions into a sum of the decay rates for the various channels, in agreement with observations. Continuous and unavoidable monitoring of an excited system by an uncontrolled environment may therefore be a mechanism by which to explain the exponential decay law.

  19. 8D Likelihood Effective Higgs Couplings Extraction Framework in the Golden Channel

    SciTech Connect (OSTI)

    Chen, Yi [California Institute of Technology, Pasadena, CA (United States); Di Marco, Emanuele [Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States); Lykken, Joe [Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States); Spiropulu, Maria [California Institute of Technology, Pasadena, CA (United States); Vega-Morales, Roberto [Universite Paris-Sud, Orsay, (France); Xie, Si [California Institute of Technology, Pasadena, CA (United States)

    2015-01-01

    In this paper we build a comprehensive analysis framework to perform direct extraction of all possible effective Higgs couplings to neutral electroweak gauge bosons in the decay to electrons and muons, the so called `golden channel'. Our framework is based on a maximum likelihood method constructed from analytic expressions of the fully differential cross sections for $h \\rightarrow 4\\ell$ and for the dominant irreducible $q\\bar{q} \\rightarrow 4\\ell$ background, where $4\\ell = 2e2\\mu, 4e, 4\\mu$. Detector effects are included by an explicit convolution of these analytic expressions with the appropriate transfer function over all center of mass variables. Using the full set of decay observables, we construct an unbinned 8-dimensional detector-level likelihood function which is continuous in the effective couplings and includes systematic uncertainties. We consider all possible $ZZ$, $Z\\gamma$ and $\\gamma\\gamma$ couplings, allowing for general CP odd/even admixtures and any possible phases. We describe how the convolution is performed and demonstrate the validity and power of the framework with a number of supporting checks and example fits. The framework can be used to perform a variety of multi-parameter extractions, including their correlations, to determine the Higgs couplings to neutral electroweak gauge bosons using data obtained at the LHC and other future colliders.

  20. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  1. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  2. Characterizing Computation-Communication Overlap in Message-Passing Systems

    SciTech Connect (OSTI)

    David E. Bernholdt; Jarek Nieplocha; P. Sadayappan; Aniruddha G. Shet; Vinod Tipparaju

    2008-01-31

    Effective overlap of computation and communication is a well understood technique for latency hiding and can yield significant performance gains for applications on high-end computers. In this report, we describe an instrumentation framework developed for message-passing systems to characterize the degree of overlap of communication with computation in the execution of parallel applications. The inability to obtain precise time-stamps for pertinent communication events is a significant problem, and is addressed by generation of minimum and maximum bounds on achieved overlap. The overlap measures can aid application developers and system designers in investigating scalability issues. The approach has been used to instrument two MPI implementations as well as the ARMCI system. The implementation resides entirely within the communication library and thus integrates well with existing approaches that operate outside the library. The utility of the framework is demonstrated by analyzing communication-computation overlap for micro-benchmarks and the NAS benchmarks, and the insights obtained are used to modify the NAS SP benchmark, resulting in improved overlap.

  3. Development of engineering geologic performance standards for land-use regulation in Sabine Pass, Texas 

    E-Print Network [OSTI]

    Vaught, Richmond Murphy

    1982-01-01

    on geologic features (such as chenier ridges), the effects of storm surge on chenier ridges, altered by borrow mining, was modeled physically (wave tank) and mathematically (computer model). Comparison of the physical and mathe- matical models shows... Pass, Texas, an area in the beginning stages of comprehensive urban planning. Sabine Pass is located along the chenier strandplain/coastal system at the Texas-Louisiana border. Processes affecting the chenier ridges and marsh at Sabine Pass...

  4. Scientific Achievement Networks of highly photoresponsive crystalline GaSe

    E-Print Network [OSTI]

    Geohegan, David B.

    Scientific Achievement Networks of highly photoresponsive crystalline GaSe nanosheets a crystalline GaSe target was adjusted to directly grow networks of interconnected triangular GaSe crystalline nanosheets of ~ 200 nm size (inset shows atomic

  5. CYLINDER BUCKLING: THE MOUNTAIN PASS AS AN ORGANIZING JIRI HORAK, GABRIEL J. LORD, AND MARK A. PELETIER

    E-Print Network [OSTI]

    Eindhoven, Technische Universiteit

    CYLINDER BUCKLING: THE MOUNTAIN PASS AS AN ORGANIZING CENTER JIR´I HOR´AK, GABRIEL J. LORD of the sensitivity of the shell to imperfections. Key to obtaining this is the existence of a mountain pass point and then numerically compute example mountain pass solutions. Numerically the mountain pass solution with lowest energy

  6. Development of metallization for GaAs and AlGaAs concentrator solar cells

    SciTech Connect (OSTI)

    Tobin, S.P.

    1987-04-01

    A three-layer metallization system was developed for high temperature stability on GaAs and AlGaAs solar cells. The layers are a Pt ohmic contact metal that forms thermally stable compounds with GaAs, a TiN diffusion barrier, and a gold conductor. The solar cell structure was also designed for contact stability, with the key component being a heavily doped GaAs cap layer. Reactively sputtered TiN was found to act as an excellent barrier when deposited under the proper conditions. The conditions were carefully optimized for low resistivity and low stress in the films. A low but nonzero substrate bias during sputtering was found to be important. Solar cells with sputtered metallizations of Pt/TiN/Ti/Pt/Au were found to be thermally stable up to 500/sup 0/C for 15 minutes in vacuum. At 600/sup 0/C there was catastrophic degradation of the cells due to dissociation of uncapped GaAs surfaces. Below this temperature the metallization performed as designed. The Pt and GaAs layers reacted to form a stable PtGa compound layer that gave low contact resistance. There was no penetration of Au or GaAs through the barrier layer. These results are a very encouraging first step leading to stable, reliable GaAs and AlGaAs concentrator cells.

  7. The Golden Gate Textile Barrier: Preserving California Bay of San Francisco from a Rising North Pacific Ocean

    E-Print Network [OSTI]

    Richart B. Cathcart; Alexander A. Bolonkin

    2007-02-04

    Climate change in California may require construction of a barrier separating the Pacific Ocean from San Francisco Bay and the Sacramento River-San Joaquin River Delta simply because Southern California is remarkably dependent on freshwater exported from the Delta. We offer a new kind of salt barrier, a macroproject built of impermeable textile materials stretched across the Golden Gate beneath the famous bridge. We anticipate it might eventually substitute for a recently proposed San Francisco In-Stream Tidal Power Plant harnessing a 1.7 m tide at the Bay entrance if future climate conditions Statewide is conducive. First-glance physics underpin our macroproject.

  8. Various Carbon to Carbon Bond Lengths Inter-related via the Golden Ratio, and their Linear Dependence on Bond Energies

    E-Print Network [OSTI]

    Raji Heyrovska

    2008-09-11

    This work presents the relations between the carbon to carbon bond lengths in the single, double and triple bonds and in graphite, butadiene and benzene. The Golden ratio, which was shown to divide the Bohr radius into two parts pertaining to the charged particles, the electron and proton, and to divide inter-atomic distances into their cationic and anionic radii, also plays a role in the carbon-carbon bonds and in the ionic/polar character of those in graphite, butadiene and benzene. Further, the bond energies of the various CC bonds are shown to vary linearly with the bond lengths.

  9. The Golden Gate Textile Barrier: Preserving California Bay of San Francisco from a Rising North Pacific Ocean

    E-Print Network [OSTI]

    Cathcart, R B; Bolonkin, Alexander A.; Cathcart, Richart B.

    2007-01-01

    Climate change in California may require construction of a barrier separating the Pacific Ocean from San Francisco Bay and the Sacramento River-San Joaquin River Delta simply because Southern California is remarkably dependent on freshwater exported from the Delta. We offer a new kind of salt barrier, a macroproject built of impermeable textile materials stretched across the Golden Gate beneath the famous bridge. We anticipate it might eventually substitute for a recently proposed San Francisco In-Stream Tidal Power Plant harnessing a 1.7 m tide at the Bay entrance if future climate conditions Statewide is conducive. First-glance physics underpin our macroproject.

  10. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; Worschech, L.; Gru?tzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  11. Investigation of Tidal Exchange and the Formation of Tidal Vortices at Aransas Pass, Texas, USA 

    E-Print Network [OSTI]

    Whilden, Kerri Ann

    2015-08-11

    Laboratory and field measurements are presented as part of a study of tidal exchange through Aransas Pass, Texas. At the mouth of Aransas Pass, the input of circulation by the ebb tide forces the formation of a starting-jet dipole vortex...

  12. SPATIAL VARIABILITY OF SNOW DEPTH MEASUREMENTS AT TWO MOUNTAIN PASS SNOW TELEMETRY STATIONS

    E-Print Network [OSTI]

    Anderson, Charles W.

    THESIS SPATIAL VARIABILITY OF SNOW DEPTH MEASUREMENTS AT TWO MOUNTAIN PASS SNOW SPATIAL VARIABILITY OF SNOW DEPTH MEASUREMENTS AT TWO MOUNTAIN PASS SNOW TELEMETRY STATIONS Much of the Western United States relies heavily on spring snow melt runoff to meet its industrial, agricultural

  13. June 28, 2005 Senate Passes Energy Bill in Prelude to Talks With House

    E-Print Network [OSTI]

    and gas production, wind and solar energy, energy-efficient appliances and hybrid cars. The measureJune 28, 2005 Senate Passes Energy Bill in Prelude to Talks With House By CARL HULSE WASHINGTON, June 28 - The Senate overwhelmingly passed broad energy legislation today, hoping its emphasis on both

  14. Asymmetric and nonlinear pass-through of crude oil prices to gasoline and natural gas prices

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Asymmetric and nonlinear pass-through of crude oil prices to gasoline and natural gas prices Ahmed distributed lags (NARDL) mod- el to examine the pass-through of crude oil prices into gasoline and natural gas-through of crude oil prices to the prices of refined petroleum products and other commodities. Most of them make

  15. Pricing Electricity for Default Customers: Pass Through or Performance-Based Rates?

    E-Print Network [OSTI]

    California at Berkeley. University of

    becomes profitable, UDCs might use their distribution assets to stifle competition in the retail marketPWP-066 Pricing Electricity for Default Customers: Pass Through or Performance-Based Rates? Carl;1 Pricing Electricity for Default Customers: Pass Through or Performance-Based Rates? Carl Blumstein1 August

  16. Implementation and Evaluation of an On-Demand Parameter-Passing Strategy for Reducing Energy

    E-Print Network [OSTI]

    Zhang, Wei

    Implementation and Evaluation of an On-Demand Parameter-Passing Strategy for Reducing Energy M Abstract In this paper, we present an energy-aware parameter- passing strategy called on-demand parameter UMIST Manchester M60 1QD, UK W.Zhang CSE Department Penn State University University Park, PA, 16802

  17. Effects of retinal scattering in the ocular double-pass process

    E-Print Network [OSTI]

    Dainty, Chris

    Effects of retinal scattering in the ocular double-pass process L. Diaz-Santana and J. C. Dainty-pass process is presented. With the help of this description, the relationship between the phase information losses and the statistical properties of retinal scattering is demonstrated. © 2001 Optical Society

  18. Ohmic contacts to n-GaSb 

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  19. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  20. A review of "Sex and Drugs before Rock 'n' Roll: Youth Culture and Masculinity During Holland's Golden Age" by Benjamin B. Roberts 

    E-Print Network [OSTI]

    Cruz, Laura

    2014-01-01

    stream_source_info Review of %22Sex and Drugs Before Rock n Roll Youth Culture and Masculinity druing Holland's Golden Age%22 by Roberts reviewer Cruz.pdf.txt stream_content_type text/plain stream_size 7164 Content-Encoding UTF-8... stream_name Review of %22Sex and Drugs Before Rock n Roll Youth Culture and Masculinity druing Holland's Golden Age%22 by Roberts reviewer Cruz.pdf.txt Content-Type text/plain; charset=UTF-8 reviews 79 Alexander’s successor, Pope Julius...

  1. First results of electron temperature measurements by the use of multi-pass Thomson scattering system in GAMMA 10

    SciTech Connect (OSTI)

    Yoshikawa, M., E-mail: yosikawa@prc.tsukuba.ac.jp; Nagasu, K.; Shimamura, Y.; Shima, Y.; Kohagura, J.; Sakamoto, M.; Nakashima, Y.; Imai, T.; Ichimura, M. [Plasma Research Center, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan); Yasuhara, R.; Yamada, I.; Funaba, H.; Kawahata, K. [National Institute for Fusion Science, 322-6 Oroshi-cho, Toki, Gifu 509-5292 (Japan); Minami, T. [Institute of Advanced Energy, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan)

    2014-11-15

    A multi-pass Thomson scattering (TS) has the advantage of enhancing scattered signals. We constructed a multi-pass TS system for a polarisation-based system and an image relaying system modelled on the GAMMA 10 TS system. We undertook Raman scattering experiments both for the multi-pass setting and for checking the optical components. Moreover, we applied the system to the electron temperature measurements in the GAMMA 10 plasma for the first time. The integrated scattering signal was magnified by approximately three times by using the multi-pass TS system with four passes. The electron temperature measurement accuracy is improved by using this multi-pass system.

  2. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  3. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2007-01-01

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  4. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys Weili Liua and Alexander A. Balandin have investigated theoretically the thermoelectric effects in wurtzite GaN crystals and AlxGa1-xN-based alloys may have some potential as thermoelectric materials at high temperature. It was found

  5. Survival Rates of Juvenile Salmonids Passing Through the Bonneville Dam and Spillway in 2008

    SciTech Connect (OSTI)

    Ploskey, Gene R.; Weiland, Mark A.; Faber, Derrek M.; Deng, Zhiqun; Johnson, Gary E.; Hughes, James S.; Zimmerman, Shon A.; Monter, Tyrell J.; Cushing, Aaron W.; Wilberding, Matthew C.; Durham, Robin E.; Townsend, R. L.; Skalski, J. R.; Buchanan, Rebecca A.; Kim, Jina; Fischer, Eric S.; Meyer, Matthew M.; McComas, Roy L.; Everett, Jason

    2009-12-28

    This report describes a 2008 acoustic telemetry survival study conducted by the Pacific Northwest National Laboratory for the Portland District of the U.S. Army Corps of Engineers. The study estimated the survival of juvenile Chinook salmon and steelhead passing Bonneville Dam (BON) and its spillway. Of particular interest was the relative survival of smolts detected passing through end spill bays 1-3 and 16-18, which had deep flow deflectors immediately downstream of spill gates, versus survival of smolts passing middle spill bays 4-15, which had shallow flow deflectors.

  6. Canonical transformation for trapped/passing guiding-center orbits in axisymmetric tokamak geometry

    SciTech Connect (OSTI)

    Brizard, Alain J. [Department of Physics, Saint Michael's College, Colchester, Vermont 05439 (United States); Duthoit, François-Xavier [CEA, IRFM, F-13108 Saint-Paul-lez-Durance (France); SNU Division of Graduate Education for Sustainabilization of Foundation Energy, Seoul National University, Seoul 151-742 (Korea, Republic of)

    2014-05-15

    The generating function for the canonical transformation from the parallel canonical coordinates (s,p{sub ||}) to the action-angle coordinates (?, J) for trapped/passing guiding-center orbits in axisymmetric tokamak geometry is presented. Drawing on the analogy between the phase-space portraits of the librating/rotating pendulum and the trapped/passing guiding-center orbits, the generating function is expressed in terms of the Jacobi zeta function, which can then readily be used to obtain an explicit expression for the bounce-center transformation for trapped/passing-particle guiding-center orbits in axisymmetric tokamak geometry.

  7. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  8. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  9. A hole accelerator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Demir, Hilmi Volkan, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey)

    2014-10-13

    The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

  10. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D?=0.53(×2.1±1) cm² s?¹ that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  11. TheGoldenGateBridgeWeatherJuly2010,Vol.65,No.7 fog, but the north tower had a story to tell. It

    E-Print Network [OSTI]

    Reading, University of

    176 TheGoldenGateBridgeWeather­July2010,Vol.65,No.7 fog, but the north tower had a story to tell. It worked as a chimney. The fog entered and escaped through the openings of the tower, displaying iridescent colors and creating ever-changing and fast-moving fog shad- ows of the tower and the cables (Figure 2). I

  12. 3D joint inversion of gradient and total-field magnetic data Kristofer Davis and Yaoguo Li, Center for Gravity, Electrical, and Magnetics, Colorado School of Mines, Golden,

    E-Print Network [OSTI]

    for Gravity, Electrical, and Magnetics, Colorado School of Mines, Golden, Colorado SUMMARY Recently3D joint inversion of gradient and total-field magnetic data Kristofer Davis and Yaoguo Li, Center and demonstrate it with a synthetic and field example. INTRODUCTION Airborne magnetic gradiometry data

  13. Effects of epitaxial lift-off on interface recombination and laser cooling in GaInP/GaAs heterostructures

    E-Print Network [OSTI]

    Sheik-Bahae, Mansoor

    , Albuquerque, New Mexico 87131 Sarah Kurtz National Renewable Energy Laboratory, Golden, Colorado 80401 and Astronomy, University of New Mexico, Albuquerque, New Mexico 87131 Richard I. Epstein Los Alamos National Laboratory, Los Alamos, New Mexico 87545 and Department of Physics and Astronomy, University of New Mexico

  14. Please be aware that you can order EITHER a subsidized T-Pass OR a regular, full time parking permit, not both. You can order both a subsidized T-Pass and an occasional parking permit.

    E-Print Network [OSTI]

    Williams, Brian C.

    Please be aware that you can order EITHER a subsidized T-Pass OR a regular, full time parking permit, not both. You can order both a subsidized T-Pass and an occasional parking permit. T November T-Pass. Remember, you must have a bursar's (student) account to order a subsidized T

  15. Experimental Demonstration of End-to-End Message Passing for HPC systems through a Hybrid Optical Switch

    E-Print Network [OSTI]

    Yoo, S. J. Ben

    optical switch and FPGAs emulating a High Performance Computing system. The experiment-driven simulation-latency message passing is critical to High Performance Computing (HPC) systems. The Message Passing Interface

  16. UTILIZATION OF TWO-STAGE SINGLE-PASS ELECTROFISHING TO ESTIMATE ABUNDANCE AND DEVELOP RECOVERY-MONITORING

    E-Print Network [OSTI]

    UTILIZATION OF TWO-STAGE SINGLE-PASS ELECTROFISHING TO ESTIMATE ABUNDANCE AND DEVELOP RECOVERY Management (Planning) Title of Thesis: Utilization of two-stage single-pass electrofishing to estimate

  17. Regional Comparisons, Spatial Aggregation, and Asymmetry of Price Pass-Through

    Reports and Publications (EIA)

    2005-01-01

    Spot to retail price pass-through behavior of the U.S. gasoline market was investigated at the national and regional levels, using weekly wholesale and retail motor gasoline prices from January 2000 to the present.

  18. Thin-disk laser pump schemes for large number of passes and moderate pump source quality

    E-Print Network [OSTI]

    Schuhmann, K; Kirch, K; Knecht, A; Kottmann, F; Nez, F; Pohl, R; Taqqu, D; Antognini, A

    2015-01-01

    Novel thin-disk laser pump layouts are proposed yielding an increased number of passes for a given pump module size and pump source quality. These novel layouts result from a general scheme which bases on merging two simpler pump optics arrangements. Some peculiar examples can be realized by adapting standard commercially available pump optics simply by intro ducing an additional mirror-pair. More pump passes yield better efficiency, opening the way for usage of active materials with low absorption. In a standard multi-pass pump design, scaling of the number of beam passes brings ab out an increase of the overall size of the optical arrangement or an increase of the pump source quality requirements. Such increases are minimized in our scheme, making them eligible for industrial applications

  19. Venture Global Calcasieu Pass, LLC- FE Dkt. No.- 15-25-LNG

    Broader source: Energy.gov [DOE]

    The Office of Fossil Energy gives notice of receipt of an Application filed February 9, 2015, by Venture Global Calcasieu Pass, LLC (Venture Global), seeking a long-term multi-contract...

  20. Who can replace Xavi? A passing motif analysis of football players

    E-Print Network [OSTI]

    Peña, Javier López

    2015-01-01

    Traditionally, most of football statistical and media coverage has been focused almost exclusively on goals and (ocassionally) shots. However, most of the duration of a football game is spent away from the boxes, passing the ball around. The way teams pass the ball around is the most characteristic measurement of what a team's "unique style" is. In the present work we analyse passing sequences at the player level, using the different passing frequencies as a "digital fingerprint" of a player's style. The resulting numbers provide an adequate feature set which can be used in order to construct a measure of similarity between players. Armed with such a similarity tool, one can try to answer the question: Who might possibly replace Xavi at FC Barcelona?

  1. TRANSPORTATION DEMAND MANAGEMENT UNIVERSITY OF BRITISH COLUMBIA (UBC) U-PASS

    E-Print Network [OSTI]

    TRANSPORTATION DEMAND MANAGEMENT ­ UNIVERSITY OF BRITISH COLUMBIA (UBC) U-PASS ­ A CASE STUDY demand management: an overview ...............................14 1.4 Traffic dynamics in Vancouver residential areas ..............92 5.0 Analysis

  2. Jet impingement heat transfer in two-pass rotating rectangular channels 

    E-Print Network [OSTI]

    Zhang, Yuming

    1996-01-01

    The combined effects of rotation and jet impingement on local heat transfer in a two-pass rotating rectangular channel is studied. The results of an experimental investigation on the surface heat transfer coefficients under a perforated plate...

  3. Heat/mass transfer distribution in rotating two-pass square channel 

    E-Print Network [OSTI]

    Kandis, Mouhyieldin

    1994-01-01

    The heat/mass trasfer distribution for turbulent flow in a rotating two-pass square channel having a sharp 180' turn were investigated via the naphthalene sublimation technique. The test section models the internal cooling passages of gas turbine...

  4. Chinook Timing 1 October 11, 2007 Run timing of adult Chinook salmon passing

    E-Print Network [OSTI]

    Washington at Seattle, University of

    Chinook Timing 1 October 11, 2007 Run timing of adult Chinook salmon passing Bonneville dam on the Columbia River White Paper Prepared by: W. Nicholas Beer Columbia Basin Research School of Aquatic....................................................................................................................... 8 In-River Conditions

  5. Passing particle toroidal precession induced by electric field in a tokamak

    SciTech Connect (OSTI)

    Andreev, V. V. [Peoples' Friendship University of Russia, Ordzhonikidze St. 3, Moscow 117198 (Russian Federation)] [Peoples' Friendship University of Russia, Ordzhonikidze St. 3, Moscow 117198 (Russian Federation); Ilgisonis, V. I.; Sorokina, E. A. [Peoples' Friendship University of Russia, Ordzhonikidze St. 3, Moscow 117198 (Russian Federation) [Peoples' Friendship University of Russia, Ordzhonikidze St. 3, Moscow 117198 (Russian Federation); NRC “Kurchatov Institute”, Kurchatov Sq. 1, Moscow 123182 (Russian Federation)

    2013-12-15

    Characteristics of a rotation of passing particles in a tokamak with radial electric field are calculated. The expression for time-averaged toroidal velocity of the passing particle induced by the electric field is derived. The electric-field-induced additive to the toroidal velocity of the passing particle appears to be much smaller than the velocity of the electric drift calculated for the poloidal magnetic field typical for the trapped particle. This quantity can even have the different sign depending on the azimuthal position of the particle starting point. The unified approach for the calculation of the bounce period and of the time-averaged toroidal velocity of both trapped and passing particles in the whole volume of plasma column is presented. The results are obtained analytically and are confirmed by 3D numerical calculations of the trajectories of charged particles.

  6. High peak-power kilohertz laser system employing single-stage multi-pass amplification

    DOE Patents [OSTI]

    Shan, Bing; Wang, Chun; Chang, Zenghu

    2006-05-23

    The present invention describes a technique for achieving high peak power output in a laser employing single-stage, multi-pass amplification. High gain is achieved by employing a very small "seed" beam diameter in gain medium, and maintaining the small beam diameter for multiple high-gain pre-amplification passes through a pumped gain medium, then leading the beam out of the amplifier cavity, changing the beam diameter and sending it back to the amplifier cavity for additional, high-power amplification passes through the gain medium. In these power amplification passes, the beam diameter in gain medium is increased and carefully matched to the pump laser's beam diameter for high efficiency extraction of energy from the pumped gain medium. A method of "grooming" the beam by means of a far-field spatial filter in the process of changing the beam size within the single-stage amplifier is also described.

  7. Degree distribution of position-dependent ball-passing networks in football games

    E-Print Network [OSTI]

    Narizuka, Takuma; Yamazaki, Yoshihiro

    2015-01-01

    We propose a simple stochastic model describing the position-dependent ball-passing network in football games. In this network, a player on a certain area in the divided fields is a node, and a pass between two nodes corresponds to an edge. Our model is characterized by the consecutive choice of a node dependent on its intrinsic fitness. We derive the explicit expression of the degree distribution, and find that the derived distribution reproduces the real data quit well.

  8. Reporting survival results of fish passing through low-head turbines

    SciTech Connect (OSTI)

    Matousek, J.A.; Wells, A.W.; Hecht, J.H. [Lawler, Matusky & Skelly Engineers, Pearl River, NY (United States)] [and others

    1994-05-01

    Findings from investigations at four Michigan hydroelectric plants indicate low to moderate mortality rates among fish passing through turbines. A fish passage study recently completed at four hydroelectric facilities on the Muskkegon and Au Sable rivers found that over 83% of the fish survive turbine entrainment. This study provides answers to questions about entrainment mortality of resident cool water fish species in the Midwest passing through turbines of various configurations.

  9. JEMMRLA - Electron Model of a Muon RLA with Multi-pass Arcs

    SciTech Connect (OSTI)

    Bogacz, Slawomir Alex; Krafft, Geoffrey A.; Morozov, Vasiliy S.; Roblin, Yves R.

    2013-06-01

    We propose a demonstration experiment for a new concept of a 'dogbone' RLA with multi-pass return arcs -- JEMMRLA (Jlab Electron Model of Muon RLA). Such an RLA with linear-field multi-pass arcs was introduced for rapid acceleration of muons for the next generation of Muon Facilities. It allows for efficient use of expensive RF while the multi-pass arc design based on linear combined-function magnets exhibits a number of advantages over separate-arc or pulsed-arc designs. Here we describe a test of this concept by scaling a GeV scale muon design for electrons. Scaling muon momenta by the muon-to-electron mass ratio leads to a scheme, in which a 4.5 MeV electron beam is injected in the middle of a 3 MeV/pass linac with two double-pass return arcs and is accelerated to 18 MeV in 4.5 passes. All spatial dimensions including the orbit distortion are scaled by a factor of 7.5, which arises from scaling the 200 MHz muon RF to a readily available 1.5 GHz. The hardware requirements are not very demanding making it straightforward to implement. Such an RLA may have applications going beyond muon acceleration: in medical isotope production, radiation cancer therapy and homeland security.

  10. Linear Fixed-Field Multi-Pass Arcs for Recirculating Linear Accelerators

    SciTech Connect (OSTI)

    V.S. Morozov, S.A. Bogacz, Y.R. Roblin, K.B. Beard

    2012-06-01

    Recirculating Linear Accelerators (RLA's) provide a compact and efficient way of accelerating particle beams to medium and high energies by reusing the same linac for multiple passes. In the conventional scheme, after each pass, the different energy beams coming out of the linac are separated and directed into appropriate arcs for recirculation, with each pass requiring a separate fixed-energy arc. In this paper we present a concept of an RLA return arc based on linear combined-function magnets, in which two and potentially more consecutive passes with very different energies are transported through the same string of magnets. By adjusting the dipole and quadrupole components of the constituting linear combined-function magnets, the arc is designed to be achromatic and to have zero initial and final reference orbit offsets for all transported beam energies. We demonstrate the concept by developing a design for a droplet-shaped return arc for a dog-bone RLA capable of transporting two beam passes with momenta different by a factor of two. We present the results of tracking simulations of the two passes and lay out the path to end-to-end design and simulation of a complete dog-bone RLA.

  11. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  12. Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells

    E-Print Network [OSTI]

    Weinstein, Benard.A.

    recently that the temperature shifts of the photo- and electroluminescence EL peak energies in Nichia greenV/GPa for the green and blue diodes, respectively. The observed pressure coefficients are much lower than those characteristic of the energy gap in GaN ( 40 meV/GPa) or the energy gap in InN ( 33 meV/GPa). This kind

  13. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  14. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  15. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore »to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  16. IEEE Energy2030 Atlanta, GA USA

    E-Print Network [OSTI]

    Gross, George

    of an aggregation of battery vehicles for the provision of frequency regulation ­ requiring very fast response timesIEEE Energy2030 Atlanta, GA USA 17-18 November, 2008 Design of a Conceptual Framework for the V2G in common is the batteries, which provide good storage capacity that can be effectively integrated

  17. 495 Tech Way NW Atlanta, GA 30318

    E-Print Network [OSTI]

    Li, Mo

    495 Tech Way NW Atlanta, GA 30318 404.385.0384 comments@energy.gatech.edu Copyright 2014 · Georgia concerns, low-cost, clean, secure energy solutions will be necessary to address our global energy needs and sustain our way of life. Georgia Tech Energy Innovations The Strategic Energy Institute's scientists

  18. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  19. Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

    E-Print Network [OSTI]

    it was discovered by Davydov et al.1 and con- firmed by independent studies2,3 that its band gap is small, EG InN =0 The conduction band offset at GaN/AlN interface was estimated as EQW=0.7 EG AlN -EG GaN =1918 meV. The nanoN/GaN/AlN QW. The depth of the nanogroove is calculated as E0=0.8 EG GaN -EG InxGa1-xN . The band gap of InxGa1

  20. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    epitaxial growth of indium gallium nitride (InGaN) layers capable of producing high-efficiency LEDs when combined with chip-on-board packaging techniques. The proposed...

  1. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lüth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8?×?10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  2. 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly ...

  3. Emission and Excitation Spectra of ZnO:Ga and ZnO:Ga,N Ceramics

    E-Print Network [OSTI]

    P. A. Rodnyi; I. V. Khodyuk; E. I. Gorokhova; S. B. Mikhrin; P. Dorenbos

    2010-09-07

    The spectral characteristics of ZnO:Ga and ZnO:Ga,N ceramics prepared by uniaxial hot pressing have been investigated. At room temperature, the edge (exciton) band at 3.12 eV dominates in the luminescence spectra of ZnO:Ga, while a wide luminescence band at 2.37 eV, which is likely to be due to zinc vacancies, is observed in the spectra of ZnO:Ga,N. Upon heating, the edge band maximum shifts to lower energies and the bandwidth increases. The extrapolated position of the edge-band maximum at zero temperature, Em(0) = 3.367 +/- 0.005 eV, is in agreement with the data for thin zinc oxide films. The luminescence excitation spectra in the range from 3 to 6.5 eV are reported and the mechanism of energy transfer to excitons and luminescence centers is considered.

  4. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Giddings, A. D.; Prosa, T. J.; Larson, D. J. [CAMECA Instruments, Inc., 5500 Nobel Drive, Madison, Wisconsin 53711 (United States); Mano, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  5. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgül Okur; Akdemir, Hande Günay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  6. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  7. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  8. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Haj?asz, M., E-mail: m.hajlasz@m2i.nl [Materials innovation institute (M2i), Mekelweg 2, 2628 CD, Delft (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); Gravesteijn, D. J. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Rietveld, F. J. R. [NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen (Netherlands); Schmitz, J. [MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands)

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  9. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  10. Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes

    E-Print Network [OSTI]

    Cornelius S. Bausch; Aune Koitmäe; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

    2013-05-06

    We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

  11. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  12. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  13. Accurate characterization and improvement of GaAs microstrip attenuation 

    E-Print Network [OSTI]

    Carroll, James Mason

    1992-01-01

    Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

  14. Electron Model Of A Dogbone RLA With Multi-Pass Arcs

    SciTech Connect (OSTI)

    Beard, Kevin B.; Roblin, Yves R.; Morozov, Vasiliy; Bogacz, Slawomir Alex; Krafft, Geoffrey A.

    2012-09-01

    The design of a dogbone Recirculated Linear Accelerator, RLA, with linear-field multi-pass arcs was earlier developed [1] for accelerating muons in a Neutrino Factory and a Muon Collider. It allows for efficient use of expensive RF while the multi-pass arc design based on linear combined-function magnets exhibits a number of advantages over separate-arc or pulsed-arc designs. Such an RLA may have applications going beyond muon acceleration. This paper describes a possible straightforward test of this concept by scaling a GeV scale muon design for electrons. Scaling muon momenta by the muon-to-electron mass ratio leads to a scheme, in which a 4.5 MeV electron beam is injected at the middle of a 3 MeV/pass linac with two double-pass return arcs and is accelerated to 18 MeV in 4.5 passes. All spatial dimensions including the orbit distortion are scaled by a factor of 7.5, which arises from scaling the 200 MHz muon RF to the frequency readily available at CEBAF: 1.5 GHz. The footprint of a complete RLA fits in an area of 25 by 7 m. The scheme utilizes only fixed magnetic fields including injection and extraction. The hardware requirements are not very demanding, making it straightforward to implement

  15. Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors

    E-Print Network [OSTI]

    Chung, Jinwook W. (Jinwook Will)

    2008-01-01

    In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

  16. A proposal for a user-level, message passing interface in a distributed memory environment

    SciTech Connect (OSTI)

    Dongarra, J.J. |; Hempel, R.; Hey, A.J.G.; Walker, D.W.

    1993-02-01

    This paper describes Message Passing Interface 1 (MPI1), a proposed library interface standard for supporting point-to-point message passing. The intended standard will be provided with Fortran 77 and C interfaces, and will form the basis of a standard high level communication environment featuring collective communication and data distribution transformations. The standard proposed here provides blocking, nonblocking, and synchronized message passing between pairs of processes, with message selectivity by source process and message type. Provision is made for noncontiguous messages. Context control provides a convenient means of avoiding message selectivity conflicts between different phases of an application. The ability to form and manipulate process groups permits task parallelism to be exploited, and is a useful abstraction in controlling certain types of collective communication.

  17. A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+

    E-Print Network [OSTI]

    McKittrick, Joanna

    A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

  18. Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers

    E-Print Network [OSTI]

    Jalali. Bahram

    Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico optical, electrical, and spectral response characteristics of three-stack InAs/GaAs quantum dot solar

  19. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  20. Canonical transformation for trapped/passing guiding-center orbits in axisymmetric tokamak geometry

    E-Print Network [OSTI]

    Brizard, Alain J

    2014-01-01

    The generating function for the canonical transformation from the parallel canonical coordinates $(p_{\\|},s)$ to the action-angle coordinates $(J,\\zeta)$ for trapped/passing guiding-center orbits in axisymmetric tokamak geometry is presented. Drawing on the analogy between the phase-space portraits of the librating/rotating pendulum and the trapped/passing guiding-center orbits, the generating function is expressed in terms of the Jacobi zeta function, which can then readily be used to obtain an explicit expression for the bounce-center transformation for trapped-particles in axisymmetric tokamak geometry.

  1. CO2 cost pass through and windfall profits in the power sectorâ??

    E-Print Network [OSTI]

    Sijm, Jos; Neuhoff, Karsten; Chen, Yihsu

    unit concerned. As a consequence, the CO2 costs pass through is defined as the average increase in power price over a certain period due to the increase in the CO2 price of an emission allowance. Pri ce/ MW h Hours/year 8760Oil CCGT Gas Coal... -generation power- intensive industry would benefit from the economic rent due to the transfer of valuable, freely allocated assets. The extent to which carbon costs are passed through to power prices depends also on changes in the merit order of the supply...

  2. Survival of Juvenile Chinook Salmon Passing the Bonneville Dam Spillway in 2007

    SciTech Connect (OSTI)

    Ploskey, Gene R.; Weiland, Mark A.; Hughes, James S.; Zimmerman, Shon A.; Durham, Robin E.; Fischer, Eric S.; Kim, Jina; Townsend, R. L.; Skalski, J. R.; Buchanan, Rebecca A.; McComas, Roy L.

    2008-12-01

    The U.S. Army Corps of Engineers Portland District (CENWP) funds numerous evaluations of fish passage and survival on the Columbia River. In 2007, the CENWP asked Pacific Northwest National Laboratory to conduct an acoustic telemetry study to estimate the survival of juvenile Chinook salmon passing the spillway at Bonneville Dam. This report documents the study results which are intended to be used to improve the conditions juvenile anadromous fish experience when passing through the dams that the Corps operates on the river.

  3. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  4. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    solar cells are triple-junction concentrator devices, with each junction efficiently col- lecting subcell in a multijunction de- vice. GaAs0.66 P0.34 single-junction solar cells with Eg = 1.83 eV were56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar

  5. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  6. Logan Pass 

    E-Print Network [OSTI]

    Unknown

    2011-09-05

    The purpose of this study was to identify benefits and constraints associated with the use of urban parks by a sample of elderly in Hong Kong. Before studying these topics, self-perception of aging of the elderly in Hong Kong was explored. In...

  7. Hybrid: Passing

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative Fuels Data Center Home PageBlenderBusiness Case forbutton highlighted Braking Button

  8. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  9. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arès, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  10. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  11. Dual-Threshold Pass-Transistor Logic Design Lara D. Oliver,

    E-Print Network [OSTI]

    Chakrabarty, Krishnendu

    high speed on critical paths and high-threshold-voltage (Vt,H) transistors to manage leakage elsewhere,krish,massoud}@ee.duke.edu ABSTRACT This paper introduces pass-transistor logic design with dual- threshold voltages. A set of single-rail threshold voltages and signal restora- tion transistors with high threshold voltages. Simulation is used

  12. Efficient Barrier Synchronization Mechanism for the BSP Model on Message-Passing Architectures

    E-Print Network [OSTI]

    Ha, Soonhoi

    Efficient Barrier Synchronization Mechanism for the BSP Model on Message-Passing Architectures Jin-742, KOREA jinsoo, sha, csjhon¡ @comp.snu.ac.kr Abstract The Bulk Synchronous Parallel (BSP) model of computa- tion can be used to develop efficient and portable programs for a range of machines

  13. Amended Notice of Intent for the Northern Pass Transmission Line Project Published in the Federal Register

    Broader source: Energy.gov [DOE]

    The Department of Energy announces its intent to modify the scope of the Northern Pass Transmission Line Project Environmental Impact Statement and to conduct additional public scoping meetings. The Federal Register Notice, which is now available for downloading, includes information on how to submit comments and participate in the additional public scoping meetings.

  14. Multiple pass and multiple layer friction stir welding and material enhancement processes

    DOE Patents [OSTI]

    Feng, Zhili (Knoxville, TN) [Knoxville, TN; David, Stan A. (Knoxville, TN) [Knoxville, TN; Frederick, David Alan (Harriman, TN) [Harriman, TN

    2010-07-27

    Processes for friction stir welding, typically for comparatively thick plate materials using multiple passes and multiple layers of a friction stir welding tool. In some embodiments a first portion of a fabrication preform and a second portion of the fabrication preform are placed adjacent to each other to form a joint, and there may be a groove adjacent the joint. The joint is welded and then, where a groove exists, a filler may be disposed in the groove, and the seams between the filler and the first and second portions of the fabrication preform may be friction stir welded. In some embodiments two portions of a fabrication preform are abutted to form a joint, where the joint may, for example, be a lap joint, a bevel joint or a butt joint. In some embodiments a plurality of passes of a friction stir welding tool may be used, with some passes welding from one side of a fabrication preform and other passes welding from the other side of the fabrication preform.

  15. A Robust Continuation Method to Pass Limit-Point Instability Kavous Jorabchi,

    E-Print Network [OSTI]

    Suresh, Krishnan

    of the equilibrium path in the vicinity of critical points. This allows the solution procedure to by-pass the critical point without experiencing ill-conditioning. An instance of such a well-conditioned path- displacement path can be challenging due to existence of critical points. Critical points are commonly

  16. Abstract--Whole-gear efficiency (the proportion of fish passing between

    E-Print Network [OSTI]

    278 Abstract--Whole-gear efficiency (the proportion of fish passing between the otter doors elassodon), rex sole (Glyptocephalus zachirus), and Dover sole (Microsto- mus pacificus). Whole-gear, flathead sole, and rex sole. For Dover sole, how- ever, whole-gear efficiency declined from a maximum of 33

  17. Bottlenose dolphins of San Luis Pass, Texas: occurrencs patterns, site fidelity, and habitat use 

    E-Print Network [OSTI]

    Maze, Katherine Suzanne

    1997-01-01

    Boat-based photo-identification surveys were conducted during a 12-month (1995-96) study of bottlenose dolphins, Tursiops truncatus, in San Luis Pass/Chocolate Bay, Texas, a relatively undisturbed area located at the southwestern end of Galveston...

  18. Statistical properties of position-dependent ball-passing networks in football games

    E-Print Network [OSTI]

    Narizuka, Takuma; Yamazaki, Yoshihiro

    2013-01-01

    Statistical properties of position-dependent ball-passing networks in real football games are examined. We find that the networks have the small-world property, and their degree distributions are fitted well by a truncated gamma distribution function. In order to reproduce these properties of networks, a model based on a Markov chain is proposed.

  19. Continuous-wave sodium D2 resonance radiation generated in single-pass sum-frequency

    E-Print Network [OSTI]

    Continuous-wave sodium D2 resonance radiation generated in single-pass sum-frequency generation 4 Faculty of Engineering, Shinshu Universityl, Nagano, Japan 380-8553 5 STE Laboratory, Nagoya University, Japan 464-8601 *Corresponding author: jyue@lamar.colostate.edu Received January 5, 2009; accepted

  20. Formation of temperature fields in doped anisotropic crystals under spatially inhomogeneous light beams passing through them

    SciTech Connect (OSTI)

    Zaitseva, E. V.; Markelov, A. S.; Trushin, V. N., E-mail: trushin@phys.unn.ru; Chuprunov, E. V. [Nizhni Novgorod State University (Russian Federation)

    2013-12-15

    The features of formation of thermal fields in potassium dihydrophosphate crystal doped with potassium permanganate under a 532-nm laser beam passing through it have been investigated. Data on the influence of birefringence on the temperature distribution in an anisotropic crystal whose surface is illuminated by a spatially modulated light beam are presented.

  1. RTI Performance on Shared Memory and Message Passing Architectures Steve L. Ferenci

    E-Print Network [OSTI]

    RTI Performance on Shared Memory and Message Passing Architectures Steve L. Ferenci Richard,fujimoto}@cc.gatech.edu Keywords: HLA, RTI, Time Management, Shared Memory. ABSTRACT: This paper compares the performance of HLA (Myricomm's Myrinet), and 3) a traditional LAN using TCP/IP. This work is based on the RTI­Kit software

  2. RTI Performance on Shared Memory and Message Passing Architectures Steve L. Ferenci

    E-Print Network [OSTI]

    RTI Performance on Shared Memory and Message Passing Architectures Steve L. Ferenci Richard,fujimoto}@cc.gatech.edu Keywords: HLA, RTI, Time Management, Shared Memory. ABSTRACT: This paper compares the performance of HLA (Myricomm's Myrinet), and 3) a traditional LAN using TCP/IP. This work is based on the RTI-Kit software

  3. Fuel-element failures in Hanford single-pass reactors 1944--1971

    SciTech Connect (OSTI)

    Gydesen, S.P.

    1993-07-01

    The primary objective of the Hanford Environmental Dose Reconstruction (HEDR) Project is to estimate the radiation dose that individuals could have received as a result of emissions since 1944 from the US Department of Energy`s (DOE) Hanford Site near Richland, Washington. To estimate the doses, the staff of the Source Terms Task use operating information from historical documents to approximate the radioactive emissions. One source of radioactive emissions to the Columbia River came from leaks in the aluminum cladding of the uranium metal fuel elements in single-pass reactors. The purpose of this letter report is to provide photocopies of the documents that recorded these failures. The data from these documents will be used by the Source Terms Task to determine the contribution of single-pass reactor fuel-element failures to the radioactivity of the reactor effluent from 1944 through 1971. Each referenced fuel-element failure occurring in the Hanford single-pass reactors is addressed. The first recorded failure was in 1948, the last in 1970. No records of fuel-element failures were found in documents prior to 1948. Data on the approximately 2000 failures which occurred during the 28 years (1944--1971) of Hanford single-pass reactor operations are provided in this report.

  4. Heat transfer characteristics of a two-pass trapezoidal channel and a novel heat pipe 

    E-Print Network [OSTI]

    Lee, Sang Won

    2009-06-02

    and roughened two-pass trapezoidal channels with a 180° turn over a range of Reynolds numbers between about 10,000 and 60,000. The naphthalene sublimation technique and the heat and mass transfer analogy were applied. The results showed that there was a very...

  5. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  6. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  7. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  8. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  9. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  10. Langevin and Fokker-Planck analyses of inhibited molecular passing processes controlling transport and reactivity in nanoporous materials

    SciTech Connect (OSTI)

    Wang, Chi-Jen [Ames Laboratory; Ackerman, David M. [Ames Laboratory; Slowing, Igor I. [Ames Laboratory; Evans, James W. [Ames Laboratory

    2014-07-14

    Inhibited passing of reactant and product molecules within the linear pores of nanoporous catalytic materials strongly reduces reactivity. The dependence of the passing propensity P on pore radius R is analyzed utilizing Langevin dynamics to account for solvent effects. We find that P?(R?Rc)?, where passing is sterically blocked for R?Rc, with ? below the transition state theory value. Deeper insight comes from analysis of the corresponding high-dimensional Fokker-Planck equation, which facilitates an effective small-P approximation, and dimensional reduction enabling utilization of conformal mapping ideas. We analyze passing for spherical molecules and also assess the effect of rotational degrees of freedom for elongated molecules.

  11. Case History of a Clean Water Act Compliance Agreement at the Rocky Flats Environmental Technology Site near Golden, Colorado

    SciTech Connect (OSTI)

    Thompson, J.S.

    1995-08-01

    A major Clean Water Act (CWA) Federal Facilities Compliance Agreement was signed on March 25, 1991 by the US Department of Energy, Rocky Flats Field Office (DOE, RFFO) and the Water Enforcement Division of the Environmental Protection Agency (EPA), Region VIII. The agreement revised the Rocky Flats Plant`s National Pollutant Discharge Elimination System (NPDES) permit and arose from pemittee-requested changes in effluent monitoring points and permit violations, most notably the February 22, 1989 Chromic Acid Incident. The Rocky Flats Plant, now called the Rocky Flats Environmental Technology Site (Site) near Golden Colorado was operated at that time by Rockwell International Corporation, who later plead guilty to six misdemeanor and felony counts of the CWA (the aforementioned NPDES permit violations) and paid a $4 million fine on March 26, 1992. The Compliance Agreement, hereafter referred to as the NPDES FFCA, called for three separate remedial action plans and contained a schedule for their submittal to the EPA. The compliance plans focussed on: (1) Waste Water Treatment Plant (WWTP) performance upgrades, (2) source control and surface water protection, and (3) characterization of the impacts from past sludge disposal practices. Projects that implemented the compliance plans were initiated soon after submittal to the EPA and are forecast to complete in 1997 at a total cost of over $35 million. This paper presents a case history of NPDES FFCA compliance projects and highlights the successes, failures, and lessons learned.

  12. SCALED ELECTRON MODEL OF A DOGBONE MUON RLA WITH MULTI-PASS ARCS

    SciTech Connect (OSTI)

    Kevin Beard, Rolland Johnson, Vasiliy Morozov, Yves Roblin, Andrew Hutton, Geoffrey Krafft, Slawomir Bogacz

    2012-07-01

    The design of a dogbone RLA with linear-field multi-pass arcs was earlier developed for accelerating muons in a Neutrino Factory and a Muon Collider. It allows for efficient use of expensive RF while the multi-pass arc design based on linear combined-function magnets exhibits a number of advantages over separate-arc or pulsed-arc designs. Such an RLA may have applications going beyond muon acceleration. This paper describes a possible straightforward test of this concept by scaling a GeV scale muon design for electrons. Scaling muon momenta by the muon-to-electron mass ratio leads to a scheme, in which a 4.5 MeV electron beam is injected at the middle of a 3 MeV/pass linac with two double-pass return arcs and is accelerated to 18 MeV in 4.5 passes. All spatial dimensions including the orbit distortion are scaled by a factor of 7.5, which arises from scaling the 200 MHz muon RF to a readily available at CEBAF 1.5 GHz. The footprint of a complete RLA fits in an area of 25 by 7 m. The scheme utilizes only fixed magnetic fields including injection and extraction. The hardware requirements are not very demanding, making it straightforward to implement. In this report, we have shown first of all that measuring the energy spectrum of the fast neutrons in the liquid scintillators allows one to distinguish the two chemical forms of plutonium. In addition, combining this information with the Feynman 2-neutron and 3-neutron correlations allows one to extract the {alpha}-ratio without explicitly knowing the multiplication. Given the {alpha}-ratio one can then extract the multiplication as well as the {sup 239}Pu and {sup 240}Pu masses directly from the moment equations.

  13. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  14. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  15. GaN based nanorods for solid state lighting

    SciTech Connect (OSTI)

    Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

    2012-04-01

    In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

  16. GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a

    E-Print Network [OSTI]

    Atwater, Harry

    GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C, crack-free GaInP/GaAs double junction solar cells were grown by metal organic chemical vapor deposition with the world record efficiency is a metamorphic triple junction GaInP/GaAs/Ge cell.6 Alternatively, wafer

  17. Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    -emitting diodes (LEDs) are considered the new generation lighting sources due to their advantages in power Society of America OCIS codes: 230.3670, 230.5590, 160.6000. Nitride-based high-power light devoted to the development of high-brightness GaN-based LEDs [3­5]. Lateral hole spreading is one

  18. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  19. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  20. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  1. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  2. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  3. Demonstration of a semipolar (10(1)over-bar(3)over-bar) InGaN/GaN green light emitting diode

    E-Print Network [OSTI]

    2005-01-01

    InGaN / GaN green light emitting diode R. Sharma, a? P. M.green ??525 nm? light emitting diode ?LED?. The fabricated

  4. MnPASS System Study Phase 2 Prepared for the Minnesota Department of Transportation by Cambridge Systematics, Inc. with SRF

    E-Print Network [OSTI]

    Minnesota, University of

    will be put in place during construction The Next Opportunity See Cayuga Project materials at: http://www.dot.state.mn.us/metro/projects/cayuga/indexPASS onto the Twin City Highway System · Identified a potential MnPASS system ­ Studied cost, operational provide increased trip reliability and user choice in a cost-effective manner (I-394) ­ New lower cost

  5. A dual-pass variational data assimilation framework for estimating soil moisture profiles from AMSR-E microwave

    E-Print Network [OSTI]

    influences the partitioning of surface available energy into sensible and latent heat fluxes and henceA dual-pass variational data assimilation framework for estimating soil moisture profiles from AMSR, we have designed a dual-pass assimilation (DP-En4DVar) framework to optimize the model state

  6. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19?}m{sup ?2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  7. Feasibility of Tidal and Ocean Current Energy in False Pass, Aleutian Islands, Alaska FINAL REPORT

    SciTech Connect (OSTI)

    Wright, Bruce Albert

    2014-05-07

    The Aleutian Pribilof Islands Association was awarded a U.S. Department of Energy Tribal Energy Program grant (DE-EE0005624) for the Feasibility of Tidal and Ocean Current Energy in False Pass, Aleutian Islands, Alaska (Project). The goal of the Project was to perform a feasibility study to determine if a tidal energy project would be a viable means to generate electricity and heat to meet long-term fossil fuel use reduction goals, specifically to produce at least 30% of the electrical and heating needs of the tribally-owned buildings in False Pass. The Project Team included the Aleut Region organizations comprised of the Aleutian Pribilof Island Association (APIA), and Aleutian Pribilof Island Community Development Association (APICDA); the University of Alaska Anchorage, ORPC Alaska a wholly-owned subsidiary of Ocean Renewable Power Company (ORPC), City of False Pass, Benthic GeoScience, and the National Renewable Energy Laboratory (NREL). The following Project objectives were completed: collected existing bathymetric, tidal, and ocean current data to develop a basic model of current circulation at False Pass, measured current velocities at two sites for a full lunar cycle to establish the viability of the current resource, collected data on transmission infrastructure, electrical loads, and electrical generation at False Pass, performed economic analysis based on current costs of energy and amount of energy anticipated from and costs associated with the tidal energy project conceptual design and scoped environmental issues. Utilizing circulation modeling, the Project Team identified two target sites with strong potential for robust tidal energy resources in Isanotski Strait and another nearer the City of False Pass. In addition, the Project Team completed a survey of the electrical infrastructure, which identified likely sites of interconnection and clarified required transmission distances from the tidal energy resources. Based on resource and electrical data, the Project Team developed a conceptual tidal energy project design utilizing ORPC’s TidGen® Power System. While the Project Team has not committed to ORPC technology for future development of a False Pass project, this conceptual design was critical to informing the Project’s economic analysis. The results showed that power from a tidal energy project could be provided to the City of False at a rate at or below the cost of diesel generated electricity and sold to commercial customers at rates competitive with current market rates, providing a stable, flat priced, environmentally sound alternative to the diesel generation currently utilized for energy in the community. The Project Team concluded that with additional grants and private investment a tidal energy project at False Pass is well-positioned to be the first tidal energy project to be developed in Alaska, and the first tidal energy project to be interconnected to an isolated micro grid in the world. A viable project will be a model for similar projects in coastal Alaska.

  8. Survival and Passage of Juvenile Chinook Salmon and Steelhead Passing through Bonneville Dam, 2011

    SciTech Connect (OSTI)

    Ploskey, Gene R.; Batten, G.; Cushing, Aaron W.; Kim, Jin A.; Johnson, Gary E.; Skalski, J. R.; Townsend, Richard L.; Seaburg, Adam; Weiland, Mark A.; Woodley, Christa M.; Hughes, James S.; Carlson, Thomas J.; Carpenter, Scott M.; Deng, Zhiqun; Etherington, D. J.; Fischer, Eric S.; Fu, Tao; Greiner, Michael J.; Hennen, Matthew J.; Martinez, Jayson J.; Mitchell, T. D.; Rayamajhi, Bishes; Zimmerman, Shon A.

    2013-02-15

    Pacific Northwest National Laboratory (PNNL) and subcontractors conducted an acoustic-telemetry study of juvenile salmonid fish passage and survival at Bonneville Dam in 2011. The study was conducted to assess the readiness of the monitoring system for official compliance studies under the 2008 Biological Opinion and Fish Accords and to assess performance measures including route-specific fish passage proportions, travel times, and survival based upon a virtual/paired-release model. The study relied on releases of live Juvenile Salmon Acoustic Telemetry System tagged smolts in the Columbia River and used acoustic telemetry to evaluate the approach, passage, and survival of passing juvenile salmon using a virtual release, paired reference release survival model. This study supports the U.S. Army Corps of Engineers’ continual effort to improve conditions for juvenile anadromous fish passing through Columbia River dams.

  9. Survival and Passage of Juvenile Chinook Salmon and Steelhead Passing through Bonneville Dam, 2010

    SciTech Connect (OSTI)

    Ploskey, Gene R.; Weiland, Mark A.; Hughes, James S.; Woodley, Christa M.; Deng, Zhiqun; Carlson, Thomas J.; Kim, Jin A.; Royer, Ida M.; Batten, George W.; Cushing, Aaron W.; Carpenter, Scott M.; Etherington, D. J.; Faber, Derrek M.; Fischer, Eric S.; Fu, Tao; Hennen, Matthew J.; Mitchell, Tyler; Monter, Tyrell J.; Skalski, John R.; Townsend, Richard L.; Zimmerman, Shon A.

    2011-12-01

    Pacific Northwest National Laboratory (PNNL) and subcontractors conducted an acoustic-telemetry study of juvenile salmonid fish passage and survival at Bonneville Dam in 2010. The study was conducted to assess the readiness of the monitoring system for official compliance studies under the 2008 Biological Opinion and Fish Accords and to assess performance measures including route-specific fish passage proportions, travel times, and survival based upon a single-release model. This also was the last year of evaluation of effects of a behavioral guidance device installed in the Powerhouse 2 forebay. The study relied on releases of live Juvenile Salmon Acoustic Telemetry System tagged smolts in the Columbia River and used acoustic telemetry to evaluate the approach, passage, and survival of passing juvenile salmon. This study supports the U.S. Army Corps of Engineers continual effort to improve conditions for juvenile anadromous fish passing through Columbia River dams.

  10. Survival and Passage of Juvenile Chinook Salmon and Steelhead Passing Through Bonneville Dam, 2010

    SciTech Connect (OSTI)

    Ploskey, Gene R.; Weiland, Mark A.; Hughes, James S.; Woodley, Christa M.; Deng, Zhiqun; Carlson, Thomas J.; Kim, Jin A.; Royer, Ida M.; Batten, George W.; Cushing, Aaron W.; Carpenter, Scott M.; Etherington, D. J.; Faber, Derrek M.; Fischer, Eric S.; Fu, Tao; Hennen, Matthew J.; Mitchell, T. D.; Monter, Tyrell J.; Skalski, J. R.; Townsend, Richard L.; Zimmerman, Shon A.

    2012-09-01

    Pacific Northwest National Laboratory (PNNL) and subcontractors conducted an acoustic-telemetry study of juvenile salmonid fish passage and survival at Bonneville Dam in 2010. The study was conducted to assess the readiness of the monitoring system for official compliance studies under the 2008 Biological Opinion and Fish Accords and to assess performance measures including route-specific fish passage proportions, travel times, and survival based upon a single-release model. This also was the last year of evaluation of effects of a behavioral guidance device installed in the Powerhouse 2 forebay. The study relied on releases of live Juvenile Salmon Acoustic Telemetry System tagged smolts in the Columbia River and used acoustic telemetry to evaluate the approach, passage, and survival of passing juvenile salmon. This study supports the U.S. Army Corps of Engineers continual effort to improve conditions for juvenile anadromous fish passing through Columbia River dams.

  11. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  12. High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

    SciTech Connect (OSTI)

    Chang, Chiao-Yun; Li, Hen; Lu, Tien-Chang, E-mail: timtclu@mail.nctu.edu.tw [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300 (China)

    2014-03-03

    In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20?mA and a 27.0% efficiency droop at 100?mA (corresponding to a current density of 69?A/cm{sup 2}), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs.

  13. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  14. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  15. Development of polarization-controlled multi-pass Thomson scattering system in the GAMMA 10 tandem mirror

    SciTech Connect (OSTI)

    Yoshikawa, M.; Morimoto, M.; Shima, Y.; Kohagura, J.; Sakamoto, M.; Nakashima, Y.; Imai, T. [Plasma Research Center, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan); Yasuhara, R.; Yamada, I.; Kawahata, K.; Funaba, H. [National Institute for Fusion Science, 322-6 Oroshi-cho, Toki, Gifu 509-5292 (Japan); Minami, T. [Institute of Advanced Energy, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan)

    2012-10-15

    In the GAMMA 10 tandem mirror, the typical electron density is comparable to that of the peripheral plasma of torus-type fusion devices. Therefore, an effective method to increase Thomson scattering (TS) signals is required in order to improve signal quality. In GAMMA 10, the yttrium-aluminum-garnet (YAG)-TS system comprises a laser, incident optics, light collection optics, signal detection electronics, and a data recording system. We have been developing a multi-pass TS method for a polarization-based system based on the GAMMA 10 YAG TS. To evaluate the effectiveness of the polarization-based configuration, the multi-pass system was installed in the GAMMA 10 YAG-TS system, which is capable of double-pass scattering. We carried out a Rayleigh scattering experiment and applied this double-pass scattering system to the GAMMA 10 plasma. The integrated scattering signal was made about twice as large by the double-pass system.

  16. Oblique electromagnetic instabilities for an ultra relativistic electron beam passing through a plasma

    E-Print Network [OSTI]

    A. Bret

    2006-04-07

    We present an investigation of the electromagnetic instabilities which are trig gered when an ultra relativistic electron beam passes through a plasma. The linear growth rate is computed for every direction of propagation of the unstable modes, and temperatures are modelled using simple waterbag distribution functions. The ultra relativistic unstable spectrum is located around a very narrow band centered on a critical angle which value is given analytically. The growth rate of modes propagating in this direction decreases like k^(-1/3).

  17. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  18. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  19. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

    E-Print Network [OSTI]

    sound velocity in GaN. The cut off wave vector is given by where NA is the Avogadro number, is the mass

  20. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  1. A Review of "Majesty and Humanity: Kings and Their Doubles in the Political Drama of the Spanish Golden Age" by Alban K. Forcione 

    E-Print Network [OSTI]

    Bass, Laura

    2011-01-01

    , the ?Conclusion? along with the last two chapters would provide a fresh and illuminating perspective on Baroque literature of Spain. The first two chapters could enrich a study of Columbus?s travel log or Cort?s?s ?Letters from Mexico.? Whether read in parts... or as a whole, Vilches?s book offers the reader a layered and insightful examination of early modern Spain?s ?Golden Age,? attune to all the contradictions that follow from this term. Alban K. Forcione. Majesty and Humanity: Kings and Their Doubles...

  2. EA-1968: Site-Wide Environmental Assessment of the U.S. Department of Energy National Renewable Energy Laboratory (NREL) South Table Mountain (STM) Campus, Golden, Colorado

    Office of Energy Efficiency and Renewable Energy (EERE)

    DOE is preparing a Site-Wide Environmental Assessment to analyze the potential environmental impacts of possible site operations and improvements over the next five to ten years at DOE’s STM campus of NREL and nearby leased support facilities in Golden, Colorado. This proposed action would support DOE’s mission to research, develop, and deploy energy efficiency and renewable energy technologies and would consist of: • Research, routine laboratory, and site operation enhancements • New building construction and modifications of existing buildings • Infrastructure and utilities upgrades and enhancements

  3. Biogas and Fuel Cells Workshop Summary Report: Proceedings from the Biogas and Fuel Cells Workshop, Golden, Colorado, June 11-13, 2012

    SciTech Connect (OSTI)

    Not Available

    2013-01-01

    The U.S. Department of Energy (DOE) National Renewable Energy Laboratory (NREL) held a Biogas and Fuel Cells Workshop June 11-13, 2012, in Golden, Colorado, to discuss biogas and waste-to-energy technologies for fuel cell applications. The overall objective was to identify opportunities for coupling renewable biomethane with highly efficient fuel cells to produce electricity; heat; combined heat and power (CHP); or combined heat, hydrogen and power (CHHP) for stationary or motive applications. The workshop focused on biogas sourced from wastewater treatment plants (WWTPs), landfills, and industrial facilities that generate or process large amounts of organic waste, including large biofuel production facilities (biorefineries).

  4. Istanbul,Turkey & Atlanta, GA Istanbul,Turkey

    E-Print Network [OSTI]

    Frantz, Kyle J.

    Istanbul,Turkey & Atlanta, GA Istanbul,Turkey & Atlanta, GA 2012 Media, Journalism and Business for departure to Istanbul,Turkey Day 9 Depart for Istanbul; guided cultural visit upon arrival; group dinner Day business leaders; site visits to local universities Day 18 UPS and the value of logistics inTurkey Day 19

  5. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  6. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-?m transport was observed within an electron spin lifetime of 1.2?ns at room temperature when using an in-plane electric field of 1.75?kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  7. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  8. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  9. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  10. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  11. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  12. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect (OSTI)

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  13. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  14. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ) In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells

  15. Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns

    E-Print Network [OSTI]

    Jahns, Jürgen

    Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns Current crowding in mesa-structure GaInN/GaN light-emitting diodes (LEDs) grown on insulating and a saturation of the optical output power at high injection currents. It is shown that the optical power

  16. Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors

    E-Print Network [OSTI]

    Florida, University of

    , creating both electron traps and increasing electron tunneling through the defect states [4Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron 2011 a b s t r a c t AlGaN/GaN High Electron Mobility Transistors were found to exhibit a negative

  17. Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat

    E-Print Network [OSTI]

    Shepelyansky, Dima

    Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

  18. Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal

    E-Print Network [OSTI]

    Ozbay, Ekmel

    between GaN and a sapphire substrate, the dislocation scattering mechanism and the electron spillover

  19. Atomistic description of the electronic structure of InxGa1xAs alloys and InAsGaAs superlattices

    E-Print Network [OSTI]

    Kent, Paul

    quantum-wells15,20 (InxGa1 xAs)n /InP on InP and (InxGa1 xAs)n /GaAs on GaAs, and v GaAs-embedded InAs quantum dots.21­23 We wish to provide a uniform the- oretical description of the electronic structure-period dependence of the band offsets and interband transitions of InAs/GaAs systems on InP and GaAs substrates. DOI

  20. Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 m; accepted 3 June 2013; published online 19 June 2013) InGaN/GaN light-emitting diodes (LEDs) with graded , which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which

  1. Low-frequency noise in GaNAlGaN heterostructure field-effect transistors at cryogenic temperatures

    E-Print Network [OSTI]

    Pala, Nezih

    that the 1/f noise in GaN/AlGaN HFETs might be caused by electron tunneling from the channel to the traps was practically independent of the frequency of analysis. The model linking this maximum to the electron tunneling Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics

  2. Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

    SciTech Connect (OSTI)

    Spitzer, M.B.; Vernon, S.M.; Wolfson, R.G.; Tobin, S.P.

    1984-01-01

    The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

  3. Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

  4. GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

    E-Print Network [OSTI]

    be well suited for exploitation of long wavelength quantum dot and dilute nitride technology, resulting in single lateral mode emission from an In0.17Ga0.83As double quantum well laser. Introduction: Lasers based on the GaAs materials system offer advan- tages over their InP counterparts, such as the use

  5. Improved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering by nanoparticles

    E-Print Network [OSTI]

    Yu, Edward T.

    of QDs in the context of our work is attractive for achieving long wavelength absorption in solar cells enhancement at all infrared wave- lengths in the device photocurrent spectrum. Epitaxial layer structuresImproved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering

  6. Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high

  7. SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

    E-Print Network [OSTI]

    Florida, University of

    for spacecraft and other long-term sensing applications. However, hydrogen is a dangerous gas for storage for monitoring leakage of hydrogen storage equipment and fuel tanks for spacecraft and hydrogen fuel cellSnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

  8. Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations 

    E-Print Network [OSTI]

    Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

    2007-01-01

    A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

  9. DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS

    E-Print Network [OSTI]

    Honsberg, Christiana

    photovoltaic efficiency of 39% at 236 suns is achieved by a triple-junction GaInP- GaInAs-Ge tandem solar cell [1]. While the achievable efficiency of triple-junction tandem solar cells is restricted to about 40% [2], modeling results show that a tandem solar cell of five junctions or greater, or an equivalent

  10. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect (OSTI)

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  11. Wake deficit measurements on the Jess and Souza Ranches, Altamont Pass

    SciTech Connect (OSTI)

    Nierenburg, R. (Altamont Energy Corp., San Rafael, CA (USA))

    1990-04-01

    This report is ninth in a series of documents presenting the findings of field test under DOE's Cooperative Field Test Program (CFTP) with the wind industry. This report provides results of a project conducted by Altamont Energy Corp. (AEC) to measure wake deficits on the Jess and Sousa Ranches in Altamont Pass, CA. This research enhances and complements other DOE-funded projects to refine estimates of wind turbine array effects. This project will help explain turbine performance variability caused by wake effects. 4 refs., 28 figs., 106 tabs.

  12. Method and system for compact, multi-pass pulsed laser amplifier

    DOE Patents [OSTI]

    Erlandson, Alvin Charles

    2014-11-25

    A laser amplifier includes an input aperture operable to receive laser radiation having a first polarization, an output aperture coupled to the input aperture by an optical path, and a polarizer disposed along an optical path. A transmission axis of the polarizer is aligned with the first polarization. The laser amplifier also includes n optical switch disposed along the optical path. The optical switch is operable to pass the laser radiation when operated in a first state and to reflect the laser radiation when operated in a second state. The laser amplifier further includes an optical gain element disposed along the optical path and a polarization rotation device disposed along the optical path.

  13. A dynamic stability analysis of an aircraft passing through the trailing vortices of another aircraft 

    E-Print Network [OSTI]

    De Santo, Robert James William

    1972-01-01

    Santo, Jr. , B. S. , United States Air Force Academy Directed by: Dr. Balusu M. Rao A method is developed to predict the changes in the aerodynamic forces and moments on an aircraft as it passes through the trailing vortex system of another aircraft.... The method is based on a liftinq surface theory developed by Jones and Rao and on a modified lifting line theory developed by Glauert. The aerodynamic forces and moments, in the horizontal and vertical planes, are computed using the De- Havilland Beaver...

  14. A high-pass detunable quadrature birdcage coil at high-field 

    E-Print Network [OSTI]

    Kampani, Vishal Virendra

    2008-10-10

    *coswt*C [2.30] Where, C is the area of the horizontal loop. EMF generated in horizontal loop=EMF1= )sin(** 1 wtCB dt d ?= ? [2.31] EMF generated in vertical loop=EMF2= )cos(** 2 wtCB dt d = ? [2....32] EMF1 and EMF2 passes through quad hybrid on receive side and add in amplitude and the phase of EMF2 is delayed by 90degrees and phase of EMF1 is the same. Thus, signal received at “R” =EMF1+EMF2=-B*C*sinwt + B*C*cos(wt-90) =-B...

  15. Laboratory Studies of the Effects of Pressure and Dissolved Gas Supersaturation on Turbine-Passed Fish

    SciTech Connect (OSTI)

    Neitzel, Duane A.

    2009-09-14

    Migratory and resident fish in the Columbia River Basin are exposed to stresses associated with hydroelectric power production, including changes in pressure as they pass through turbines and dissolved gas supersaturation (resulting from the release of water from the spillway). To examine pressure changes as a source of turbine-passage injury and mortality, Pacific Northwest National Laboratory scientists conducted specific tests using a hyperbaric chamber. Tests were designed to simulate Kaplan turbine passage conditions and to quantify the response of fish to rapid pressure changes, with and without the complication of fish being acclimated to gas-supersaturated water.

  16. Effect of unsteady wake passing frequency on boundary layer transition on the concave surface of a curved plate 

    E-Print Network [OSTI]

    Read, Robert Kevin

    1997-01-01

    The unsteady boundary layer behavior on the concave surface of a curved plate is investigated. Detailed experimental investigations are carried out to study the effect of unsteady wakes on the boundary layer transition under varying wake passing...

  17. Geology and geothermal resources of the Santiam Pass area of the Oregon Cascade Range, Deschutes, Jefferson and Linn Counties, Oregon

    SciTech Connect (OSTI)

    Hill, B.E. (ed.)

    1992-10-01

    This open-file report presents the results of the Santiam Pass drilling program. The first phase of this program was to compile all available geological, geophysical and geothermal data for the Santiam Pass area and select a drill site on the basis of these data (see Priest and others, 1987a), A summary of the drilling operations and costs associated with the project are presented in chapter 1 by Hill and Benoit. An Overview of the geology of the Santiam Pass area is presented by Hill and Priest in chapter 2. Geologic mapping and isotopic age determinations in the Santiam Pass-Mount Jefferson area completed since 1987 are summarized in chapter 2. One of the more important conclusions reached in chapter 2 is that a minimum of 2 km vertical displacement has occurred in the High Cascade graben in the Santiam Pass area. The petrology of the Santiam Pass drill core is presented by Hill in chapter 3. Most of the major volcanic units in the core have been analyzed for major, minor, and trace element abundances and have been studied petrographically. Three K-Ar ages are interpreted in conjunction with the magnetostratigraphy of the core to show that the oldest rocks in the core are approximately 1.8 Ma. Geothermal and geophysical data collected from the Santiam Pass well are presented by Blackwell in chapter 4. The Santiam Pass well failed to penetrate beneath the zone of lateral groundwater flow associated with highly permeable Quaternary volcanic rocks. Calculated geothermal gradients range from about 50[degree]C/km at depth 700-900 m, to roughly 110[degree]C/km from 900 m to the bottom of the well at 929 m. Heat-flow values for the bottom part of the hole bracket the regional average for the High Cascades. Blackwell concludes that heat flow along the High Cascades axis is equal to or higher than along the western edge of the High Cascades.

  18. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 × emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 × 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  19. Characterization of Zns-GaP Naon-composites

    SciTech Connect (OSTI)

    Todd, V.

    1993-12-09

    It proved possible to produce consistent, high-quality nanocrystalline ZnS powders with grain sizes as small as 8 nm. These powders are nano-porous and are readily impregnated with GaP precursor, although inconsistently. Both crystal structure and small grain size of the ZnS can be maintained through the use of GaP. Heat treatment of the impregnated powders results in a ZnS-GaP composite structure where the grain sizes of the phases are on the order of 10--20 nm. Conventional powder processing should be able to produce optically dense ceramic compacts with improved mechanical properties and suitable IR transmission.

  20. Manager, Golden Field Office

    Broader source: Energy.gov [DOE]

    This position is located in the Office of Energy Efficiency and Renewable Energy (EERE). The mission of EERE is to create and sustain American leadership in the global transition to a clean energy...

  1. Golden - Local Information | NREL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunitiesNERSC Getting Started at14 at

  2. Indium distribution at the interfaces of (Ga,In)(N,As)/GaAs quantum wells

    SciTech Connect (OSTI)

    Luna, E.; Ishikawa, F.; Batista, P. D.; Trampert, A. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin (Germany)

    2008-04-07

    The indium distribution across (Ga,In)(N,As) quantum wells is determined by using transmission electron microscopy techniques. Inside the quantum well, the indium distribution is well described by Muraki's segregation model; however, it fails in reflecting the concentration at the interfaces. To describe them, we propose a sigmoidal law which defines the smooth variation of the indium concentration with the position and provides a systematic and quantitative characterization of the interfaces. The thermal stability of the interfaces and their interplay with segregation effects are discussed. A connection between the high thermal robustness of the interfaces and the inherent thermodynamic miscibility gap of the alloy is suggested.

  3. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  4. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

    2013-05-15

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

  5. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  6. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

    SciTech Connect (OSTI)

    Guo, Lei; Yang, Xuelin Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Feng, Zhihong; Lv, Yuanjie; Wang, Xinqiang; Shen, B.; Ge, Weikun

    2014-12-15

    We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

  7. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

    SciTech Connect (OSTI)

    Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing, E-mail: jqpan@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Chen, Weixi [State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871 (China); Ding, Ying, E-mail: Ying.Ding@glasgow.ac.uk [School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)

    2014-10-06

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ?51?nm at a center wavelength of 1060?nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

  8. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect (OSTI)

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  9. Electrical degradation mechanisms of RF power GaAs PHEMTs

    E-Print Network [OSTI]

    Villanueva, Anita A. (Anita Ariel), 1978-

    2007-01-01

    GaAs Pseudomorphic High-Electron Mobility Transistors (PHEMTs) are widely used in RF power applications. Since these devices typically operate at high power levels and under high voltage biasing, their electrical reliability ...

  10. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  11. Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Badcock, T. J., E-mail: Thomas.badcock@crl.toshiba.co.uk; Dawson, P.; Davies, M. J. [School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kappers, M. J.; Massabuau, F. C.-P.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

    2014-03-21

    We have studied the carrier recombination dynamics in an InGaN/GaN multiple quantum well structure as a function of emission energy and excitation density between temperatures of 10?K and 100?K. Under relatively low levels of excitation, the photoluminescence (PL) intensity and decay time of emission on the high energy side of the luminescence spectrum decrease strongly between 10?K and 50?K. In contrast, for emission detected on the low energy side of the spectrum, the PL intensity and decay time increase over the same temperature range. These results are consistent with a thermally activated carrier redistribution process in which the (temperature dependent) average timescale for carrier transfer into or out of a localised state depends on the energy of the given state. Thus, the transfer time out of shallow, weakly localised states is considerably shorter than the arrival time into more deeply localised states. This picture is consistent with carriers hopping between localisation sites in an uncorrelated disorder potential where the density of localised states decreases with increasing localisation depth, e.g., a exponential or Gaussian distribution resulting from random alloy disorder. Under significantly higher levels of excitation, the increased occupation fraction of the localised states results in a greater average separation distance between unoccupied localised states, causing a suppression of the spectral and dynamic signatures of the hopping transfer of carriers.

  12. AVTA Federal Fleet PEV Readiness Data Logging and Characterization Study for the National Park Service: Golden Gate National Recreation Area

    SciTech Connect (OSTI)

    Stephen Schey; Jim Francfort

    2014-03-01

    Battelle Energy Alliance, LLC, managing and operating contractor for the U.S. Department of Energy's Idaho National Laboratory, is the lead laboratory for U.S. Department of Energy Advanced Vehicle Testing. Battelle Energy Alliance, LLC contracted with Intertek Testing Services, North America (ITSNA) to collect data on federal fleet operations as part of the Advanced Vehicle Testing Activity's Federal Fleet Vehicle Data Logging and Characterization study. The Advanced Vehicle Testing Activity study seeks to collect data to validate the utilization of advanced electric drive vehicle transportation. This report focuses on the Golden Gate National Recreation Area (GGNRA) fleet to identify daily operational characteristics of select vehicles and report findings on vehicle and mission characterizations to support the successful introduction of plug-in electric vehicles (PEVs) into the agencies' fleets. Individual observations of these selected vehicles provide the basis for recommendations related to electric vehicle adoption and whether a battery electric vehicle or plug-in hybrid electric vehicle (PHEV) (collectively PEVs) can fulfill the mission requirements. GGNRA identified 182 vehicles in its fleet, which are under the management of the U.S. General Services Administration. Fleet vehicle mission categories are defined in Section 4, and while the GGNRA vehicles conduct many different missions, only two (i.e., support and law enforcement missions) were selected by agency management to be part of this fleet evaluation. The selected vehicles included sedans, trucks, and sport-utility vehicles. This report will show that battery electric vehicles and/or PHEVs are capable of performing the required missions and providing an alternative vehicle for support vehicles and PHEVs provide the same for law enforcement, because each has a sufficient range for individual trips and time is available each day for charging to accommodate multiple trips per day. These charging events could occur at the vehicle home base, high-use work areas, or intermediately along routes that the vehicles frequently travel. Replacement of vehicles in the current fleet would result in significant reductions in the emission of greenhouse gases and petroleum use, while also reducing fuel costs. The San Francisco Bay Area is a leader in the adoption of PEVs in the United States. PEV charging stations, or more appropriately identified as electric vehicle supply equipment, located on the GGNRA facility would be a benefit for both GGNRA fleets and general public use. Fleet drivers and park visitors operating privately owned PEVs benefit by using the charging infrastructure. ITSNA recommends location analysis of the GGNRA site to identify the optimal placement of the electric vehicle supply equipment station. ITSNA recognizes the support of Idaho National Laboratory and ICF International for their efforts to initiate communication with the National Parks Service and GGNRA for participation in the study. ITSNA is pleased to provide this report and is encouraged by the high interest and support from the National Park Service and GGNRA personnel.

  13. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

    SciTech Connect (OSTI)

    Ledentsov, N. N., E-mail: nikolay.ledentsov@v-i-systems.com; Shchukin, V. A. [VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623 (Germany); Lyytikäinen, J.; Okhotnikov, O. [Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720 (Finland); Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V. [A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation); Schlichting, S.; Nippert, F.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623 (Germany)

    2014-11-03

    We report on green (550–560?nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (?500?A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (?550?nm at room temperature). At high current densities (>1?kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4?kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14?kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

  14. Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

    SciTech Connect (OSTI)

    Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

    2014-11-07

    Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280?nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

  15. High intensity low temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs

    SciTech Connect (OSTI)

    Shvarts, Maxim Z., E-mail: shvarts@scell.ioffe.ru; Kalyuzhnyy, Nikolay A.; Mintairov, Sergey A.; Soluyanov, Andrei A.; Timoshina, Nailya Kh. [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021 (Russian Federation); Gudovskikh, Alexander S. [Saint-Petersburg Academic University - Nanotechnology Research and Education Centre RAS, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

    2014-09-26

    In the work, the results of an investigation of GaInP/GaInAs/Ge MJ SCs intended for converting concentrated solar radiation, when operating at low temperatures (down to ?190 °C) are presented. A kink of the cell I-V characteristic has been observed in the region close to V{sub oc} starting from ?20°C at operation under concentrated sunlight. The causes for its occurrence have been analyzed and the reasons for formation of a built-in potential barrier for majority charge carriers at the n-GaInP/n-Ge isotype hetero-interface are discussed. The effect of charge carrier transport in n-GaInP/n-pGe heterostructures on MJ SC output characteristics at low temperatures has been studied including EL technique.

  16. The origin and reduction of switching noise in GaAs/AlGaAs lateral gated devices

    E-Print Network [OSTI]

    Davies, John H.

    to cryogenic temperature with all gates grounded to the substrate to protect against electrostatic effects in AlGaAs: electrons `freeze' into deep traps ­ DX centres ­ below about 150 K. The occupation of donors

  17. Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers

    E-Print Network [OSTI]

    Keogh, David Martin

    2006-01-01

    assuming the material growth technology allows for all ofand a relatively immature growth technology, as well as theof the art for InGaN growth technology. Epitaxial growth of

  18. Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties

    SciTech Connect (OSTI)

    Sztein, Alexander, E-mail: asztein@umail.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106 (United States); Bowers, John E.; DenBaars, Steven P.; Nakamura, Shuji [Materials Department, University of California, Santa Barbara, California 93106 (United States); Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2014-01-27

    A novel polarization field engineering based strategy to simultaneously achieve high electrical conductivity and low thermal conductivity in thermoelectric materials is demonstrated. Polarization based electric fields are used to confine electrons into two-dimensional electron gases in GaN/AlN/Al{sub 0.2}Ga{sub 0.8}N superlattices, resulting in improved electron mobilities as high as 1176 cm{sup 2}/Vs and in-plane thermal conductivity as low as 8.9?W/mK. The resulting room temperature ZT values reach 0.08, a factor of four higher than InGaN and twelve higher than GaN, demonstrating the potential benefits of this polarization based engineering strategy for improving the ZT and efficiencies of thermoelectric materials.

  19. Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors 

    E-Print Network [OSTI]

    Johnson, Derek Wade

    2014-07-31

    production is projected to consume ~100,000 wafers per year by 2015 (Yole Development, “Power GaN – 2012 Edition”), this manufacturing breakthrough represents potential savings of ~$17 million per year....

  20. Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

    E-Print Network [OSTI]

    Florida, University of

    2011; published online 21 March 2011 A subnanometer thick interfacial oxide layer present between used to characterize a Ni/AlGaN interfacial oxide layer with subnanometer thickness. The semiconducting

  1. Surface effects in the energy loss of ions passing through a thin foil

    SciTech Connect (OSTI)

    Osma, J.

    1997-09-01

    The role of surface plasmon excitation in the interaction of ions passing through thin films has been studied in both the Bloch hydrodynamic approximation and the local response approach for projectile velocities above the maximum of the stopping power curve. The effect of the surface is found to be much weaker when the dispersion of the modes is taken into consideration than in the case of nondispersive media, though qualitatively the main features of the hydrodynamic approach resemble those of the local one. A generalization of the Bothe-Landau convolution formula for the loss probability distribution is derived to take into account the scattering due to the surface. The effects of the surface in the energy-loss spectra are discussed. A comparison with experiment is given. {copyright} {ital 1997} {ital The American Physical Society}

  2. Message Passing for Integrating and Assessing Renewable Generation in a Redundant Power Grid

    E-Print Network [OSTI]

    Zdeborová, Lenka; Chertkov, Michael

    2009-01-01

    A simplified model of a redundant power grid is used to study integration of fluctuating renewable generation. The grid consists of large number of generator and consumer nodes. The net power consumption is determined by the difference between the gross consumption and the level of renewable generation. The gross consumption is drawn from a narrow distribution representing the predictability of aggregated loads, and we consider two different distributions representing wind and solar resources. Each generator is connected to D consumers, and redundancy is built in by connecting R of these consumers to other generators. The lines are switchable so that at any instance each consumer is connected to a single generator. We explore the capacity of the renewable generation by determining the level of "firm" generation capacity that can be displaced for different levels of redundancy R. We also develop message-passing control algorithm for finding switch settings where no generator is overloaded.

  3. Intrinsic low pass filtering improves signal-to-noise ratio in critical-point flexure biosensors

    SciTech Connect (OSTI)

    Jain, Ankit; Alam, Muhammad Ashraful

    2014-08-25

    A flexure biosensor consists of a suspended beam and a fixed bottom electrode. The adsorption of the target biomolecules on the beam changes its stiffness and results in change of beam's deflection. It is now well established that the sensitivity of sensor is maximized close to the pull-in instability point, where effective stiffness of the beam vanishes. The question: “Do the signal-to-noise ratio (SNR) and the limit-of-detection (LOD) also improve close to the instability point?”, however remains unanswered. In this article, we systematically analyze the noise response to evaluate SNR and establish LOD of critical-point flexure sensors. We find that a flexure sensor acts like an effective low pass filter close to the instability point due to its relatively small resonance frequency, and rejects high frequency noise, leading to improved SNR and LOD. We believe that our conclusions should establish the uniqueness and the technological relevance of critical-point biosensors.

  4. A grid-enabled MPI : message passing in heterogeneous distributed computing systems.

    SciTech Connect (OSTI)

    Foster, I.; Karonis, N. T.

    2000-11-30

    Application development for high-performance distributed computing systems, or computational grids as they are sometimes called, requires grid-enabled tools that hide mundate aspects of the heterogeneous grid environment without compromising performance. As part of an investigation of these issues, they have developed MPICH-G, a grid-enabled implementation of the Message Passing Interface (MPI) that allows a user to run MPI programs across multiple computers at different sites using the same commands that would be used on a parallel computer. This library extends the Argonne MPICH implementation of MPI to use services provided by the globus grid toolkit. In this paper, they describe the MPICH-G implementation and present preliminary performance results.

  5. A Proper Motion Survey Using the First Sky Pass of NEOWISE-Reactivation Data

    E-Print Network [OSTI]

    Schneider, Adam C; Cushing, Michael C; Kirkpatrick, J Davy; Mainzer, Amy; Gelino, Christopher R; Fajardo-Acosta, Sergio B; Bauer, James

    2015-01-01

    The Wide-field Infrared Survey Explorer (WISE) was reactivated in December of 2013 (NEOWISE) to search for potentially hazardous near-Earth objects. We have conducted a survey using the first sky pass of NEOWISE data and the AllWISE catalog to identify nearby stars and brown dwarfs with large proper motions ($\\mu_{\\rm total}$ $\\gtrsim$ 250 mas yr$^{-1}$). A total of 20,548 high proper motion objects were identified, 1,006 of which are new discoveries. This survey has uncovered a significantly larger sample of fainter objects (W2 $\\gtrsim$13 mag) than the previous WISE motion surveys of Luhman (2014a) and Kirkpatrick et al. (2014). Many of these objects are predicted to be new L and T dwarfs based on near- and mid-infrared colors. Using estimated spectral types along with distance estimates, we have identified several objects likely belonging to the nearby Solar neighborhood (d $potentially nea...

  6. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect (OSTI)

    Özduran, Mustafa; Turgut, Kemal; Arikan, Nihat; ?yigör, Ahmet; Candan, Abdullah

    2014-10-06

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  7. Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure

    SciTech Connect (OSTI)

    Khmissi, H.; Baira, M.; Bouzaieene, L.; Saidi, F.; Maaref, H. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Sfaxi, L. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Universite de Sousse Faculte des Sciences de Monastir, Avenue de l'Environnement 5019 Monastir (Tunisia); Bru-Chevallier, C. [Institut des Nanotechnologies de Lyon (INL), CNRS UMR-5270, INSA-LYON, 7, Avenue Jean Capelle, Bat. Blaise Pascal, 69621 Villeurbanne (France)

    2011-03-01

    Optical properties of InAs quantum dots (QDs) inserted in AlGaAs/GaAs modulation doped heterostructure are investigated. To study the effect of carrier transfer behavior on the luminescence of self-assembled quantum dots, a series of sample has been prepared using molecular beam epitaxy (Riber 32 system) in which we have varied the thickness separating the delta dopage and the InAs quantum dots layer. Photoluminescence spectra show the existence of two peaks that can be attributed to transition energies from the ground state (E{sub 1}-HH{sub 1}) and the first excited state (E{sub 2}-HH{sub 2}). Two antagonist effects have been observed, a blue shift of the emission energies result from electron transferred from the AlGaAs/GaAs heterojunction to the InAs quantum dots and a red shift caused by the quantum confined Stark effect due to the internal electric field existing In the AlGaAs/GaAs heterojunction.

  8. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  9. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  10. Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well

    E-Print Network [OSTI]

    Jalali. Bahram

    Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico, New Mexico 87545 Received 26 February 2007; accepted 1 June 2007; published online 28 June 2007 intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

  11. A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    amplifier using GaN- HEMTs-on-Sapphire. I INTRODUCTION GaN HEMTs have enormous potential for realizing high-power Traveling Wave Power Amplifier circuit (TWPA)[1][2] for realization of wideband power amplifiersWE4A-5 A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs Jane J

  12. Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2

    SciTech Connect (OSTI)

    Hongpinyo, V; Ding, Y H; Dimas, C E; Wang, Y; Ooi, B S; Qiu, W; Goddard, L L; Behymer, E M; Cole, G D; Bond, T C

    2008-06-11

    The authors investigate the effect of intermixing in InGaAs/GaAs quantum well structure using Cu-doped SiO{sub 2}. The incorporation of Cu into the silica film yields larger bandgap shift than typical impurity-free vacancy diffusion (IFVD) method at a lower activation temperature. We also observe enhancement of the photoluminescence (PL) signal from the intermixed InGaAs/GaAs quantum well structure after being cycle-annealed at 850 C.

  13. Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells J. Simon,1,a

    E-Print Network [OSTI]

    Haller, Gary L.

    . INTRODUCTION Triple-junction metamorphic solar cells have reached ef- ficiencies as high as 41.1% by combiningMetamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells J. Simon,1,a S. Tomasulo,1 P-yP solar cells. Tensile-strained GaAsxP1-x buffers grown on GaAs using unoptimized conditions

  14. FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS

    E-Print Network [OSTI]

    Atwater, Harry

    FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS RobynAlAs/InGaAsP/InGaAs triple junction solar cell grown on InP substrate. X-ray diffraction characterization shows high quality solar cell materials. Preliminary 1-sun AM1.5D testing of the triple junction solar cell shows promising

  15. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore »the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  16. Radiation damage of GaAs thin-film solar cells on Si substrates

    SciTech Connect (OSTI)

    Itoh, Y.; Yamaguchi, M.; Nishioka, T.; Yamamoto, A.

    1987-01-15

    1-MeV electron irradiation damages in GaAs thin-film solar cells on Si substrates are examined for the first time. Damage constant for minority-carrier diffusion length in GaAs heteroepitaxial films on Si substrates is found to be the same as that in GaAs homoepitaxial films on GaAs substrates. This agreement suggests that GaAs/Si has the same defect introduction rate with radiation as GaAs/GaAs. The degradation of GaAs solar cells on Si with electron irradiation is less than that of GaAs solar cells on GaAs, because in the present, GaAs films on Si substrates have lower minority-carrier diffusion length compared to GaAs films on GaAs and these films are insensitive to radiation. The p/sup +/-p/sup +/-n AlGaAs-GaAs heteroface solar cell with junction depth of about 0.3 ..mu..m is concluded to be useful for a high-efficiency and radiation-resistant solar cell fabricated on a Si substrate.

  17. Laser Gain and Threshold Properties in Compressive-Strained and Lattice-Matched GaInNAs/GaAs Quantum Wells

    SciTech Connect (OSTI)

    Chow, W.W.; Jones, E.D.; Modine, N.A.; Allerman, A.A.; Kurtz, S.R.

    1999-08-04

    The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GAInNAs/GaAs laser structures.

  18. Aspect ratio effect on heat transfer in rotating two-pass rectangular channels with smooth walls and ribbed walls 

    E-Print Network [OSTI]

    Fu, Wen-Lung

    2005-08-29

    number ratio in the second pass is more complicated due to the strong effect of the 180? turn. Results are also presented for this critical turn region of the two-pass channels. In addition to these regions, the channel averaged heat transfer, friction... is very complex, and the heat transfer is dependent on both the channel and turn geometry. With the blade rotating, the coolant flow does not behave as the typical channel flow. The secondary flow patterns are strongly influenced by rotation. Heat...

  19. Metal contacts on ZnSe and GaN

    SciTech Connect (OSTI)

    Duxstad, K J [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering

    1997-05-01

    Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

  20. Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment

    SciTech Connect (OSTI)

    Ahmadi, Elaheh; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States); Chalabi, Hamidreza [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Kaun, Stephen W.; Shivaraman, Ravi; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2014-10-07

    The influence of alloy clustering on fluctuations in the ground state energy of the two-dimensional electron gas (2DEG) in AlGaN/GaN and InAlN/GaN heterostructures is studied. We show that because of these fluctuations, alloy clustering degrades the mobility even when the 2DEG wavefunction does not penetrate the alloy barrier unlike alloy disorder scattering. A comparison between the results obtained for AlGaN/GaN and InAlN/GaN heterostructures shows that alloy clustering limits the 2DEG mobility to a greater degree in InAlN/GaN heterostructures. Our study also reveals that the inclusion of an AlN interlayer increases the limiting mobility from alloy clustering. Moreover, Atom probe tomography is used to demonstrate the random nature of the fluctuations in the alloy composition.

  1. Free-flow variability on the Jess and Souza Ranches, Altamont Pass

    SciTech Connect (OSTI)

    Nierenberg, R.

    1989-03-01

    This report is one of a series of such documents that present the findings of field tests conducted under the Department of Energy's (DOE) Cooperative Field Test Program with the US wind industry. The report provides the results of a study to collect data at two windfarms. The two wind turbine arrays, located in the Altamont Pass east of San Francisco, were instrumented with anemometers and a central monitoring computer. To obtain a high spatial density of wind-speed measurements, every other turbine in both arrays was instrumented. Wind-speed data were collected over a period of four days during the summer high-wind season with all turbines shut down. The resultant data set was analyzed to determine the spatial variability of the wind resource in the two arrays. Because no turbine wakes were present, variation in the flow was caused by the interaction of the flow with the terrain and was not a function of turbine wake interaction. The free-flow data sets can be used by other researchers to refine numerical free-flow computer models. The data sets will be used to fine tune and validate these computer models. In addition, the free-flow data will be compared to results of a wake energy deficit study also under way on these turbine arrays. 56 figs., 14 tabs.

  2. Electro-hydraulic control system for a dual-pass continuously variable transmission

    SciTech Connect (OSTI)

    Algrain, M.C.; Anderson, S.R.; Smirl, R.L.

    1991-07-16

    This patent describes a control system for controlling the hydraulic pressure in a dual-pass continuously variable transmission system having a plurality of drive paths from a power input to a power output, and a continuously variable component including first and second variable pulleys disposed respectively on first and second intermediate shafts, the transmission system having first and second clutches engagable to effect transition from a first drive path in which the first variable pulley is the driver pulley to a second drive path in which the second variable pulley is the driver pulley, the transmission system being releasable to effect a transition from the second drive path to the first drive path. It comprises means to provide a primary hydraulic pressure to each of the first and second variable pulleys; means for providing a secondary hydraulic pressure to each of the first and second variable pulleys; means for electrically regulating the primary and secondary pressures responsive to engine conditions; and means for directing the primary and secondary hydraulic pressures to the first and second variable pulleys in response to change of drive path.

  3. Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

    SciTech Connect (OSTI)

    Schmidt, Gordon Müller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jürgen; Glauser, Marlene; Carlin, Jean-François; Cosendey, Gatien; Butté, Raphaël; Grandjean, Nicolas

    2014-07-21

    Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

  4. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

    SciTech Connect (OSTI)

    Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

    2010-01-15

    The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

  5. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect (OSTI)

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  6. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-01

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

  7. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D. J.; Kurtz, Sarah R.; Kibbler, A. E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-15

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.

  8. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect (OSTI)

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  9. A hole modulator for InGaN/GaN light-emitting diodes Zi-Hui Zhang, Zabu Kyaw, Wei Liu, Yun Ji, Liancheng Wang, Swee Tiam Tan, Xiao Wei Sun, and Hilmi Volkan

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    well on optical power of light-emitting diodes Appl. Phys. Lett. 96, 051113 (2010); 10-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which

  10. Effect of Composition on the Formation of Sigma during Single-Pass Welding of Mo-Bearing Stainless Steels

    E-Print Network [OSTI]

    DuPont, John N.

    Effect of Composition on the Formation of Sigma during Single-Pass Welding of Mo-Bearing Stainless, and laser welds were prepared on each alloy at constant power and travel speeds ranging from 4.2 to 42 mm d-ferrite alloys. The high cooling rates in the laser welds (estimated to range from 104 °C/s to 105

  11. IEEE TRANSACTIONS ON PARALLEL AND DISTRIBUTED SYSTEMS, VOL. 9, NO. 10, OCTOBER 1998 1029 Critical Path Profiling of Message Passing

    E-Print Network [OSTI]

    Hollingsworth, Jeffrey K.

    the critical path profile of the execution of message passing and shared-memory parallel programs. Our algorithm permits starting or stopping the critical path computation during program execution and reporting intermediate values. We also present an online algorithm to compute a variant of critical path, called critical

  12. Announcement of Change in Public Meeting Location for the Northern Pass Transmission Line Project Published in the Federal Register

    Broader source: Energy.gov [DOE]

    The Department announces a change of location for the September 26, 2013 public scoping meeting for the Northern Pass Transmission Line Project to Colebrook Elementary School, 27 Dumont Street, Colebrook, NH. The meeting will be from 5 to 8 p.m.

  13. Scattering Theory When an x-ray beam (or neutron or light) passes through a material with

    E-Print Network [OSTI]

    Beaucage, Gregory

    Scattering Theory When an x-ray beam (or neutron or light) passes through a material radiation is scattered in directions that differ from that of the incident beam. Scattering arises since x of scattered radiation resulting from this process bears a direct relationship to the structure (the pattern

  14. PIV flow measurements for heat transfer characterization in two-pass square channels with smooth and 90 ribbed walls

    E-Print Network [OSTI]

    Kihm, IconKenneth David

    passages inside a turbine blade to convectively extract heat from the blade body. The coolant air Elsevier Science Ltd. All rights reserved. 1. Introduction Advanced gas turbine airfoils are subjected-pass square channel was reported using liquid crystal technique by Ekkad and Han [4]. Park and Lau [5] also

  15. Numerical Simulation of Flow and Heat Transfer in Internal Multi-Pass Cooling Channel within Gas Turbine Blade 

    E-Print Network [OSTI]

    Chu, Hung-Chieh 1979-

    2012-11-16

    four-pass channel with two different inlet settings. The main flowing channel was rectangular channel (AR=2:1) with hydraulic diameter (Dh ) equals to 2/3 inch (16.9 mm). The first and fourth channel were set as different aspect ratio (AR=2:1; AR=1...

  16. House Energy and Water Development FY 2007 Appropriations Passed by House Appropriations Committee May 17, 2006, Status: sent to House

    E-Print Network [OSTI]

    House Energy and Water Development FY 2007 Appropriations Passed by House Appropriations Committee May 17, 2006, Status: sent to House Fusion Energy Sciences ­ Office of Science The Committee recommendation for fusion energy sciences is $318,950,000, the same as the budget request. The Committee

  17. `I'll just pass you to Customer Service...' Communication Breakdown Between the Users and Suppliers of Clinical Technology

    E-Print Network [OSTI]

    Johnson, Chris

    `I'll just pass you to Customer Service...' Communication Breakdown Between the Users and Suppliers and suppliers. Recent mishaps have shown that clinicians may not know whether a device has actually from suppliers who may not have been directly responsible for the development of the device

  18. Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

    SciTech Connect (OSTI)

    Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko; Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel; Garcia, Alipio

    2009-06-08

    We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

  19. Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets

    SciTech Connect (OSTI)

    Chu, Kuei-Yi; Chiang, Meng-Hsueh Cheng, Shiou-Ying; Liu, Wen-Chau

    2012-02-15

    Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

  20. Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Edmunds, C.; Malis, O.; Shao, J.; Shirazi-HD, M.; Manfra, M. J.

    2014-07-14

    We demonstrate THz intersubband absorption (15.6–26.1?meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14?meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a??40% reduction in the linewidth (from roughly 8 to 5?meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

  1. High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

    SciTech Connect (OSTI)

    Young, N. G. Farrell, R. M.; Iza, M.; Speck, J. S.; Perl, E. E.; Keller, S.; Bowers, J. E.; Nakamura, S.; DenBaars, S. P.

    2014-04-21

    We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

  2. InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

    SciTech Connect (OSTI)

    Alonso-Álvarez, D.; Thomas, T.; Führer, M.; Hylton, N. P.; Ekins-Daukes, N. J.; Lackner, D.; Philipps, S. P.; Bett, A. W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.

    2014-08-25

    Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1??s, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

  3. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Mingda [University of Notre Dame, IN (United States); Song, Bo [Cornell University, Ithaca, NY (United States); Qi, Meng [University of Notre Dame, IN (United States); Hu, Zongyang [University of Notre Dame, IN (United States); Nomoto, Kazuki [University of Notre Dame, IN (United States); Yan, Xiaodong [University of Notre Dame, IN (United States); Cao, Yu [IQE, Westborough, MA (United States); Johnson, Wayne [IQE, Westborough, MA (United States); Kohn, Erhard [University of Notre Dame, IN (United States); Jena, Debdeep [Cornell University, Ithaca, NY (United States); Xing, Grace Huili [Cornell University, Ithaca, NY (United States)

    2015-04-01

    In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m?{center_dot}cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW{center_dot}cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

  4. Electrically pumped single-photon emission at room temperature from a single InGaN/GaN quantum dot

    SciTech Connect (OSTI)

    Deshpande, Saniya; Frost, Thomas; Hazari, Arnab; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109 (United States)

    2014-10-06

    We demonstrate a semiconductor quantum dot based electrically pumped single-photon source operating at room temperature. Single photons emitted in the red spectral range from single In{sub 0.4}Ga{sub 0.6}N/GaN quantum dots exhibit a second-order correlation value g{sup (2)}(0) of 0.29, and fast recombination lifetime ?1.3 ±0.3 ns at room temperature. The single-photon source can be driven at an excitation repetition rate of 200?MHz.

  5. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Mingda; Song, Bo; Qi, Meng; Hu, Zongyang; Nomoto, Kazuki; Yan, Xiaodong; Cao, Yu; Johnson, Wayne; Kohn, Erhard; Jena, Debdeep; et al

    2015-02-16

    In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m? · cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW·cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

  6. Simulating Blade-Strike on Fish passing through Marine Hydrokinetic Turbines

    SciTech Connect (OSTI)

    Romero Gomez, Pedro DJ; Richmond, Marshall C.

    2014-06-16

    The study reported here evaluated the occurrence, frequency, and intensity of blade strike of fish on an axial-flow marine hydrokinetic turbine by using two modeling approaches: a conventional kinematic formulation and a proposed Lagrangian particle- based scheme. The kinematic model included simplifying assumptions of fish trajectories such as distribution and velocity. The proposed method overcame the need for such simplifications by integrating the following components into a computational fluid dynamics (CFD) model: (i) advanced eddy-resolving flow simulation, (ii) generation of ambient turbulence based on field data, (iii) moving turbine blades in highly transient flows, and (iv) Lagrangian particles to mimic the potential fish pathways. The test conditions to evaluate the blade-strike probability and fish survival rate were: (i) the turbulent environment, (ii) the fish size, and (iii) the approaching flow velocity. The proposed method offered the ability to produce potential fish trajectories and their interaction with the rotating turbine. Depending upon the scenario, the percentile of particles that registered a collision event ranged from 6% to 19% of the released sample size. Next, by using a set of experimental correlations of the exposure-response of living fish colliding with moving blades, the simulated collision data were used as input variables to estimate the survival rate of fish passing through the operating turbine. The resulting survival rates were greater than 96% in all scenarios, which is comparable to or better than known survival rates for conventional hydropower turbines. The figures of strike probability and mortality rate were amplified by the kinematic model. The proposed method offered the advantage of expanding the evaluation of other mechanisms of stress and injury on fish derived from hydrokinetic turbines and related devices.

  7. Theory of weak localization in ferromagnetic (Ga,Mn)As 

    E-Print Network [OSTI]

    Garate, Ion; Sinova, Jairo; Jungwirth, T.; MacDonald, A. H.

    2009-01-01

    We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence-band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find that at Mn...

  8. Low-temperature magnetization of (Ga,Mn) As semiconductors 

    E-Print Network [OSTI]

    Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL.

    2006-01-01

    the semiphenomenological virtual crystal model the valence band holes experience a mean-field hMF =JpdNMn?S , and the band Hamiltonian can then be written as H? MF=H? KL?B?+hMFs?z, where H? KL?B? is the B-dependent six- band Kohn-Luttinger Hamiltonian of the GaAs host...

  9. Ohmic contacts for high-temperature GaP devices 

    E-Print Network [OSTI]

    Van der Hoeven, Willem Bernard

    1981-01-01

    in Table II, heat treatments have also been made by laser. One of the earliest papers that describe laser annealing to obtain ohmic contacts to GaP appeared in 1974 (20] . In this paper, Pounds, Saifi, and Hahm reported to have obtained ohmic contacts...

  10. High-quality InP on GaAs

    E-Print Network [OSTI]

    Quitoriano, Nathaniel Joseph

    2006-01-01

    In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

  11. Nanoscale GaAs metalsemiconductormetal photodetectors fabricated using nanoimprint lithography

    E-Print Network [OSTI]

    ­V) characteristics of the contacts are very sensi- tive to the surface states and defects. In this letter, we report mold with interdigited fin- gers was first created on a silicon substrate. Next, a layer of polymethylmethancrylate PMMA was spun on a semi- insulating SI GaAs substrate. Before imprinting, both the mold

  12. Properties of H, O and C in GaN

    SciTech Connect (OSTI)

    Pearton, S.J.; Abernathy, C.R.; Lee, J.W.

    1996-04-01

    The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

  13. Luminescence properties of defects in GaN

    SciTech Connect (OSTI)

    Reshchikov, Michael A.; Morkoc, Hadis [Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)

    2005-03-15

    Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects (vacancies, interstitial, and antisites), intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of other impurities, such as C, Si, H, O, Be, Mn, Cd, etc., on the luminescence properties of GaN are also reviewed. Further, atypical luminescence lines which are tentatively attributed to the surface and structural defects are discussed. The effect of surfaces and surface preparation, particularly wet and dry etching, exposure to UV light in vacuum or controlled gas ambient, annealing, and ion implantation on the characteristics of the defect-related emissions is described.

  14. Quaternary InGaAsSb Thermophotovoltaic Diodes

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  15. Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes

    SciTech Connect (OSTI)

    Zhou, Kun; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Liu, Jianping, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Zhang, Shuming; Li, Deyao; Zhang, Liqun; Yang, Hui [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Cai, Jin; Wang, Hui; Wang, H. B. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Suzhou Nanojoin Photonics Co., Ltd., Suzhou (China)

    2014-10-27

    The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3?nm–6?nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200?A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelength we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.

  16. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.

    SciTech Connect (OSTI)

    Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

    2012-03-01

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

  17. Nonlinear Terahertz Metamaterials via Field-Enhanced Carrier Dynamics in GaAs

    E-Print Network [OSTI]

    Fan, Kebin

    We demonstrate nonlinear metamaterial split ring resonators (SRRs) on GaAs at terahertz frequencies. For SRRs on doped GaAs films, incident terahertz radiation with peak fields of ?20–160??kV/cm drives intervalley scattering. ...

  18. Device-level thermal analysis of GaN-based electronics

    E-Print Network [OSTI]

    Bagnall, Kevin Robert

    2013-01-01

    Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

  19. Light extraction in individual GaN nanowires on Si for LEDs

    E-Print Network [OSTI]

    Zhou, Xiang

    GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

  20. Inves&ga&ng the Trade-Off between Luminous Efficacy of Radia&on

    E-Print Network [OSTI]

    California at Davis, University of

    Inves&ga&ng the Trade-Off between Luminous Efficacy of Radia&on and Color, Canada · Lorne Whitehead, Canada #12;Inves&ga&ng the Trade-Off between Luminous

  1. Characterization of NIR InGaAs imager arrays for the JDEM SNAP mission concept

    E-Print Network [OSTI]

    2006-01-01

    Characterization of NIR InGaAs imager arrays for the JDEMapplications. Keywords: NIR, InGaAs, astronomy, low-1.7um band Near Infrared (NIR) focal plane mosaic with high

  2. Atomic structure of postgrowth annealed epitaxial Fe/(001)GaAs interfaces

    E-Print Network [OSTI]

    LeBeau, James; Hu, Qi O.; Palmstrom, Christopher; Stemmer, Susanne

    2008-01-01

    line pro?le across the interface along the line indicated inHAADF images of the GaAs/Fe interface along ?a? ?11 0? GaAsindicates the location of an interface step. Arrows in ?b?

  3. Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Bia?ek, M. Witowski, A. M.; Grynberg, M.; ?usakowski, J.; Orlita, M.; Potemski, M.; Czapkiewicz, M.; Umansky, V.

    2014-06-07

    In order to characterize magnetic field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the magnetoplasmon resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.

  4. On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Gao, Feng; Chen, Di; Tuller, Harry L.; Thompson, Carl V.; Palacios, Tomás

    2014-03-28

    Water-related redox couples in ambient air are identified as an important source of the surface trapping states, dynamic on-resistance, and drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). Through in-situ X-ray photoelectron spectroscopy (XPS), direct signature of the water-related species—hydroxyl groups (OH) was found at the AlGaN surface at room temperature. It was also found that these species, as well as the current collapse, can be thermally removed above 200?°C in vacuum conditions. An electron trapping mechanism based on the H{sub 2}O/H{sub 2} and H{sub 2}O/O{sub 2} redox couples is proposed to explain the 0.5?eV energy level commonly attributed to the surface trapping states. Finally, the role of silicon nitride passivation in successfully removing current collapse in these devices is explained by blocking the water molecules away from the AlGaN surface.

  5. High 400?°C operation temperature blue spectrum concentration solar junction in GaInN/GaN

    SciTech Connect (OSTI)

    Zhao, Liang; Detchprohm, Theeradetch; Wetzel, Christian

    2014-12-15

    Transparent wide gap junctions suitable as high temperature, high flux topping cells have been achieved in GaInN/GaN by metal-organic vapor phase epitaxy. In structures of 25 quantum wells (QWs) under AM1.5G illumination, an open circuit voltage of 2.1?V is achieved. Of the photons absorbed in the limited spectral range of <450?nm, 64.2% are converted to electrons collected at the contacts under zero bias. At a fill factor of 45%, they account for a power conversion efficiency of38.6%. Under concentration, the maximum output power density per sun increases from 0.49?mW/cm{sup 2} to 0.51?mW/cm{sup 2} at 40?suns and then falls 0.42?mW/cm{sup 2} at 150?suns. Under external heating, a maximum of 0.59?mW/cm{sup 2} is reached at 250?°C. Even at 400?°C, the device is fully operational and exceeds room temperature performance. A defect analysis suggests that significantly higher fill factors and extension into longer wavelength ranges are possible with further development. The results prove GaInN/GaN QW solar junctions a viable and rugged topping cell for concentrator photovoltaics with minimal cooling requirements. By capturing the short range spectrum, they reduce the thermal load to any conventional cells stacked behind.

  6. Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1

    E-Print Network [OSTI]

    quantum wells (QW)s,1) and InAs quantum dots at 1.3 mm2) have brought about the commercialization of Ga differential quantum efficiency, T-zero and far field as a function of stripe width. # 2009 The Japan Society offer a number of advantages over their InP counterparts, namely the use of larger substrates (>3 in

  7. Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1

    E-Print Network [OSTI]

    Lu, Wei

    quantum dots by low-energy ion sputtering on a surface has been reported in several semiconductor sys quantum dots on the surface. The mechanism involves the balance between roughening and smoothing actions], Ge [10], as well as a variety of III­V compounds (GaSb [11], InP [12], and InSb [13]) can form

  8. Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Lin, Jie; Llopis, Antonio; Krokhin, Arkadii; Neogi, Arup, E-mail: arup@unt.edu [Department of Physics, University of North Texas, Denton, Texas 76203 (United States); Pereira, Sergio [CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Watson, Ian M. [SUPA, Institute of Photonics, University of Strathclyde, Glasgow (United Kingdom)

    2014-06-16

    The light enhancement phenomena in InGaN/GaN multi-quantum wells (MQWs) infiltrated with metal nanoparticles (NPs) are studied using resonant and off-resonant localized plasmon interactions. The emission and recombination characteristics of carriers in InGaN/GaN MQW structures with inverted hexagonal pits (IHPs) are modified distinctly depending on the nature of their interaction with the metal NPs and with the pumping and emitted photons. It is observed that the emission intensity of light is significantly enhanced when the emission energy is off-resonant to the localized plasmon frequency of the metal nanoparticles. This results in enhanced emission from MQW due to Au nanoparticles and from IHPs due to Ag nanoparticles. At resonant-plasmon frequency of the Ag NPs, the emission from MQWs is quenched due to the re-absorption of the emitted photons, or due to the drift carriers from c-plane MQWs towards the NPs because of the Coulomb forces induced by the image charge effect.

  9. Molecular Dynamics Simulation of GaAs Molecular Beam Epitaxy D. A. Murdick,1

    E-Print Network [OSTI]

    Wadley, Haydn

    of Virginia, Charlottesville, Virginia 22904, USA 2 Department of Materials, University of Oxford, Oxford OX1 3PH, UK ABSTRACT The vapor deposition of epitaxial GaAs and (Ga,Mn)As thin films during far-temperature growth of Ga0.94Mn0.06As and the Mn clustering trends in as-grown films. INTRODUCTION GaAs is widely used

  10. GaN Initiative for Grid Applications (GIGA)

    SciTech Connect (OSTI)

    Turner, George

    2015-07-03

    For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 ?m, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and vertical devices were explored, with the conclusion that lateral devices are superior for fundamental thermal reasons, as well as for the demonstration of future generations of monolithic power circuits. As part of the materials and device investigations breakdown mechanisms in GaN-on-Si structures were fully characterized and effective electric field engineering was recognized as critical for achieving even higher voltage operation. Improved device contact technology was demonstrated, including the first gold-free metallizations (to enable processing in CMOS foundries) while maintaining low specific contact resistance needed for high-power operation and 5-order-of magnitude improvement in device leakage currents (essential for high power operation). In addition, initial GaN-on-Si epitaxial growth was performed on 8”/200 mm Si starting substrates.

  11. DISSERTATION ANTICIPATED PERFORMANCE OF Cu(In,Ga)Se2 SOLAR CELLS IN THE

    E-Print Network [OSTI]

    Sites, James R.

    i DISSERTATION ANTICIPATED PERFORMANCE OF Cu(In,Ga)Se2 SOLAR CELLS IN THE THIN-FILM LIMIT Submitted ENTITLED `ANTICIPATED PERFORMANCE OF Cu(In,Ga)Se2 SOLAR CELLS IN THE THIN-FILM LIMIT' BE ACCEPTED(In,Ga)Se2 SOLAR CELLS IN THE THIN-FILM LIMIT The demand for alternative sources of energy is rapidly

  12. TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron

    E-Print Network [OSTI]

    neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

  13. Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a

    E-Print Network [OSTI]

    Okamoto, Koichi

    is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

  14. Near perfect solar absorption in ultra-thin-film GaAs photonic crystals

    E-Print Network [OSTI]

    John, Sajeev

    Near perfect solar absorption in ultra-thin-film GaAs photonic crystals Sergey Eyderman,*a Alexei voltage of GaAs solar cells. The current world record for high efficiency solar cells is held by thin ultra-thin (GaAs in low-cost solar cells. However, this reduction in the volume

  15. ORIGINAL ARTICLE Highly efficient GaAs solar cells by limiting light emission

    E-Print Network [OSTI]

    Polman, Albert

    a non-concentrating system with limited emission angle in a thin, light trapping GaAs solar cellORIGINAL ARTICLE Highly efficient GaAs solar cells by limiting light emission angle Emily D Kosten1 of a high-quality GaAs solar cell is a feasible route to achieving power conversion efficiencies above 38

  16. Inversion of wurtzite GaN(0001) by exposure to V. Ramachandran and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    in the growth rate of GaN on different crystallographic planes [8], pointing to a surfactant effect of Mg on Ga in these films and the carrier concentration was therefore very low [1,2]; dopant activa- tion can be achieved of Mg at GaN growth temperatures is an issue and dopant in- corporation may be rather inefficient [5

  17. Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    SciTech Connect (OSTI)

    Cheng, Junjie; Li, Jiadong; Miao, Bin; Wu, Dongmin; Wang, Jine; Pei, Renjun; Wu, Zhengyan

    2014-08-25

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup ?14} to 10{sup ?8} M and a detection limit below 10{sup ?14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

  18. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992

    SciTech Connect (OSTI)

    Venkatasubramanian, R.

    1993-01-01

    This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The ``cycled`` organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al{sub 0.34}Ga{sub 0.66}As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  19. Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

    SciTech Connect (OSTI)

    Sundaram, S.; El Gmili, Y.; Bonanno, P. L. [CNRS, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Puybaret, R.; Li, X.; Voss, P. L.; Ougazzaden, A. [Georgia Institute of Technology, UMI 2958 Georgia Tech - CNRS, 57070 Metz (France); Pantzas, K.; Patriarche, G. [CNRS, UPR LPN, Route de Nozay, 91460 Marcoussis (France); Orsal, G.; Salvestrini, J. P., E-mail: salvestr@metz.supelec.fr [Université de Lorraine, Supélec, LMOPS, EA4423, 57070 Metz (France); Troadec, D. [Université des Sciences et Technologies de Lille, CNRS, UMR 8520 IEMN, 59000 Lille (France); Cai, Z.-H. [Advanced Photon Source, 9700 S. Cass Avenue, Argonne, Illinois 60439 (United States)

    2014-10-28

    Uniform, dense, single-phase, 150?nm thick indium gallium nitride (InGaN) nanostructure (nanorods and nanostripes) arrays have been obtained on gallium nitride templates, by metal organic chemical vapor deposition and nanoscale selective area growth on silicon dioxide patterned masks. The 150?nm thick InGaN nanorods have a perfect hexagonal pyramid shape with relatively homogenous indium concentration up to 22%, which is almost twice as high as in planar InGaN grown in the same condition, and luminesce at 535?nm. InGaN nanostripes feature c-axis oriented InGaN in the core which is covered by InGaN grown along semi-polar facets with higher In content. Transmission electron microscope and sub micron beam X-rays diffraction investigations confirm that both InGaN nanostructures are mostly defect free and monocrystalline. The ability to grow defect-free thick InGaN nanostructures with reduced polarization and high indium incorporation offers a solution to develop high efficiency InGaN-based solar cells.

  20. Method of plasma etching GA-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2013-01-01

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

  1. Method of plasma etching Ga-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  2. AlGaAs-On-Insulator Nonlinear Photonics

    E-Print Network [OSTI]

    Pu, Minhao; Semenova, Elizaveta; Yvind, Kresten

    2015-01-01

    The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement. Efficient nonlinear photonic chips have myriad applications including high speed optical signal processing, on-chip multi-wavelength lasers, metrology, molecular spectroscopy, and quantum information science. Aluminium gallium arsenide (AlGaAs) exhibits very high material nonlinearity and low nonlinear loss when operated below half its bandgap energy. However, difficulties in device processing and low device effective nonlinearity made Kerr frequency comb generation elusive. Here, we demonstrate AlGaAs-on-insulator as a nonlinear platform at telecom wavelengths. Using newly developed fabrication processes, we show high-quality-factor (Q>100,000) micro-resonators with integrated bus waveguides in a planar circuit where optical parametric oscillation is achieved with a record low threshold power of 3 mW and a frequency comb spanning 350 nm i...

  3. Formation and properties of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Lockwood, D.J.; Fraser, J.W.; Graham, M.J.; Isaacs, H.S.

    1996-06-01

    Porous structures on n-type GaAs (100) can be grown electrochemically in chloride-containing solutions. Crystallographic etching of the sample is a precursor stage of the attack. Polarization curves reveal the existanece of a critical onset potential for por formation (PFP). PFP is strongly dependent on the doping level of the sample and presence of surface defects. Good agreement between PFP and breakdown voltage of the space charge layer is found. Surface analysis by EDX, AES, and XPS show that the porous structure consists mainly of GaAs and that anion uptake in the structure can only observed after attackhas been initiated. Photoluminescence measurements reveal (under certain conditions) visible light emission from the porous structure.

  4. Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    to be further improved in order for the high- power LEDs to penetrate into the consumer market of gen- eral to higher optical output power and external quantum efficiency, compared to the devices with p-AlGaN EBLGaN/GaN based light-emitting diodes (LEDs) possess unique advantages including high energy conversion effi

  5. The transputer based GA. SP data acquisition system

    SciTech Connect (OSTI)

    Colombo, D.; Avano, B.; DePoli, M.; Maron, G. ); Negro, A.; Parlati, G. )

    1992-04-01

    In this paper, the new data acquisition for the GA.SP detector is presented. It is a distributed system based on a network of 40 T800 and T222 transputers linked to a VME system used for histogram storage. A 100 MBit/s FDDI ring connects the system to UNIX workstations used for the experiment control, histogram display and second level data analysis.

  6. Minority-carrier properties of GaAs on silicon

    SciTech Connect (OSTI)

    Ahrenkiel, R.K.; Al-Jassim, M.M.; Dunlavy, D.J.; Jones, K.M.; Vernon, S.M.; Tobin, S.P.; Haven, V.E.

    1988-07-18

    The minority-carrier lifetimes of the heteroepitaxial system of GaAs on Si are limited by recombination at mismatch dislocations. Here we show that increasing the thickness of the buffer layer, with an additional annealing step, reduces the dislocation density by about an order of magnitude. At the same time, the minority-carrier lifetime in these double heterostructures increases more than an order of magnitude.

  7. Ohmic contacts to p-type Ga

    E-Print Network [OSTI]

    Jorge Estevez, Humberto Angel

    1996-01-01

    resistivity was achieved by developing the Si(750A)/Pd(400A)/Zn(xA)/Pd(IOOA)/p-GaP scheme. Values of the contact resistivity in the range of 3xlO-5 to 7xlO-' nCM2 were obtained. It was found that the optimum Zn layer thickness is 30 A for the Pd and Si...

  8. Conductivity based on selective etch for GaN devices and applications thereof

    DOE Patents [OSTI]

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  9. Continued development of metallization for GaAs concentrator cells

    SciTech Connect (OSTI)

    Tobin, S.P.

    1988-11-01

    The objective of this work was the integration of thermally stable metallizations with a high-efficiency GaAs concentrator cell process. For p-GaAs we used a Pt-TiN-Au metallization developed under a previous Sandia Contract. For n-GaAs the best results were obtained for AuGe-TiN-Au. Baseline p/n cells with a CrAu metallization achieved efficiencies of 25.4% at 200 suns. Efficiencies were about 22% at one sun. At one sun, p/n cells with high-temperature contacts were 22.2% efficient, showing that there is no efficiency penalty with the high-temperature metallization. Development efforts on n/p cells yielded high short-circuit currents and open-circuit voltages, with both conventional and high-temperature metallizations. Thermal annealing tests showed that cells with the Pt-TiN-Au metallization were more stable than those with the baseline metallization, withstanding a 15-minute anneal at 500/degree/C with negligible efficiency degradation. 22 refs., 64 figs., 54 tabs.

  10. InGaAsSb thermophotovoltaic diode physics evaluation

    SciTech Connect (OSTI)

    Charache, G.W.; Baldasaro, P.F.; Danielson, L.R. [Lockheed-Martin, Inc., Schenectady, NY (United States)] [and others

    1998-06-01

    The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1,000 C, which sets an upper limit on the TPV diode bandgap of 0.6 eV from efficiency and power density considerations. This bandgap requirement has necessitated the development of new diode material systems, never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice-matched on GaSb substrates have achieved the highest performance. This report relates observed diode performance to electro-optic properties such as minority carrier lifetime, diffusion length and mobility and provides initial links to microstructural properties. This analysis has bounded potential diode performance improvements. For the 0.52 eV InGaAsSb diodes used in this analysis the measured dark current is 2 {times} 10{sup {minus}5} A/cm{sup 2}, versus a potential Auger limit 1 {times} 10{sup {minus}5} A/cm{sup 2}, a radiative limit of 2 {times} 10{sup {minus}6} A/cm{sup 2} (no photon recycling), and an absolute thermodynamic limit of 1.4 {times} 10{sup {minus}7} A/cm{sup 2}. These dark currents are equivalent to open circuit voltage gains of 20 mV (7%), 60 mV (20%) and 140 mV (45%), respectively.

  11. Ga lithography in sputtered niobium for superconductive micro and nanowires

    SciTech Connect (OSTI)

    Henry, M. David; Wolfley, Steve; Monson, Todd; Lewis, Rupert

    2014-08-18

    This work demonstrates the use of focused ion beam (FIB) implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12?nm deep with a 14?nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10??m by 10??m and 100??m by 100??m, demonstrate that doses above than 7.5?×?10{sup 15?}cm{sup ?2} at 30?kV provide adequate mask protection for a 205?nm thick, sputtered Nb film. The resolution of this dry lithographic technique is demonstrated by fabrication of nanowires 75?nm wide by 10??m long connected to 50??m wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature (T{sub c})?=?7.7?K was measured using a magnetic properties measurement system. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.

  12. Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates

    SciTech Connect (OSTI)

    Bengoechea-Encabo, A.; Albert, S.; Barbagini, F.; Sanchez-Garcia, M. A.; Calleja, E. [ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n 28040 Madrid (Spain)] [ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n 28040 Madrid (Spain); Zuñiga-Perez, J.; Mierry, P. de [CRHEA-CNRS, 06560 Valbonne (France)] [CRHEA-CNRS, 06560 Valbonne (France); Trampert, A. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)] [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2013-12-09

    The aim of this work is the selective area growth (SAG) of GaN nanocolumns, with and without an InGaN insertion, by molecular beam epitaxyon semi-polar (11–22) GaN templates. The high density of stacking faults present in the template is strongly reduced after SAG. A dominant sharp photoluminescence emission at 3.473 eV points to high quality strain-free material. When embedding an InGaN insertion into the ordered GaN nanostructures, very homogeneous optical properties are observed, with two emissions originating from different regions of each nanostructure, most likely related to different In contents on different crystallographic planes.

  13. Gallium hole traps in irradiated KTiOPO{sub 4}:Ga crystals

    SciTech Connect (OSTI)

    Grachev, V.; Meyer, M.; Malovichko, G.; Hunt, A. W.

    2014-12-07

    Nominally pure and gallium doped single crystals of potassium titanyl phosphate (KTiOPO{sub 4}) have been studied by Electron Paramagnetic Resonance at low temperatures before and after irradiation. Irradiation with 20?MeV electrons performed at room temperature and liquid nitrogen temperature caused an appearance of electrons and holes. Gallium impurities act as hole traps in KTiOPO{sub 4} creating Ga{sup 4+} centers. Two different Ga{sup 4+} centers were observed, Ga1 and Ga2. The Ga1 centers are dominant in Ga-doped samples. For the Ga1 center, a superhyperfine structure with one nucleus with nuclear spin ½ was registered and attributed to the interaction of gallium electrons with a phosphorus nucleus or proton in its surrounding. In both Ga1 and Ga2 centers, Ga{sup 4+} ions substitute for Ti{sup 4+} ions, but with a preference to one of two electrically distinct crystallographic positions (site selective substitution). The Ga doping eliminates one of the shortcomings of KTP crystals—ionic conductivity of bulk crystals. However, this does not improve significantly the resistance of the crystals to electron and ?-radiation.

  14. Efficiency calculations of thin-film GaAs solar cells on Si substrates

    SciTech Connect (OSTI)

    Yamaguchi, M.; Amano, C.

    1985-11-01

    Dislocation effect upon the efficiency of single-crystal thin-film AlGaAs-GaAs heteroface solar cells on Si substrates is analyzed. Solar-cell properties are calculated based on a simple model; in the model, dislocations act as recombination centers to reduce the minority-carrier diffusion length in each layer and increase the space-charge layer recombination current. Numerical analysis is also carried out to optimize thin-film AlGaAs-GaAs heteroface solar-cell structures. The fabrication of thin-film AlGaAs-GaAs heteroface solar cells with a practical efficiency larger than 18% on Si substrates appears possible if the dislocation density in the thin-film GaAs layer is less than 10/sup 6/ cm/sup -2/.

  15. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

    SciTech Connect (OSTI)

    Young, Erin C.; Wu Feng; Haeger, Daniel A.; Nakamura, Shuji; Denbaars, Steven P.; Cohen, Daniel A.; Speck, James S.; Romanov, Alexey E.

    2012-10-01

    In this Letter, we report on the growth and properties of relaxed, compositionally graded Al{sub x}Ga{sub 1-x}N buffer layers on freestanding semipolar (2021) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10{sup 6}/cm{sup 2} as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

  16. Electron heating due to microwave photoexcitation in the high mobility GaAs/AlGaAs two dimensional electron system

    SciTech Connect (OSTI)

    Ramanayaka, A. N.; Mani, R. G.; Wegscheider, W.

    2013-12-04

    We extract the electron temperature in the microwave photo-excited high mobility GaAs/AlGaAs two dimensional electron system (2DES) by studying the influence of microwave radiation on the amplitude of Shubnikov-de Haas oscillations (SdHOs) in a regime where the cyclotron frequency, ?{sub c}, and the microwave angular frequency, ?, satisfy 2? ? ?{sub c} ? 3.5? The results indicate that increasing the incident microwave power has a weak effect on the amplitude of the SdHOs and therefore the electron temperature, in comparison to the influence of modest temperature changes on the dark-specimen SdH effect. The results indicate negligible electron heating under modest microwave photo-excitation, in good agreement with theoretical predictions.

  17. Origin of radiative recombination and manifestations of localization effects in GaAs/GaNAs core/shell nanowires

    SciTech Connect (OSTI)

    Chen, S. L.; Filippov, S.; Chen, W. M.; Buyanova, I. A.; Ishikawa, Fumitaro

    2014-12-22

    Radiative carrier recombination processes in GaAs/GaNAs core/shell nanowires grown by molecular beam epitaxy on a Si substrate are systematically investigated by employing micro-photoluminescence (?-PL) and ?-PL excitation (?-PLE) measurements complemented by time-resolved PL spectroscopy. At low temperatures, alloy disorder is found to cause localization of photo-excited carriers leading to predominance of optical transitions from localized excitons (LE). Some of the local fluctuations in N composition are suggested to lead to strongly localized three-dimensional confining potential equivalent to that for quantum dots, based on the observation of sharp and discrete PL lines within the LE contour. The localization effects are found to have minor influence on PL spectra at room temperature due to thermal activation of the localized excitons to extended states. Under these conditions, photo-excited carrier lifetime is found to be governed by non-radiative recombination via surface states which is somewhat suppressed upon N incorporation.

  18. Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces

    SciTech Connect (OSTI)

    Li, Huijie E-mail: sh-yyang@semi.ac.cn; Zhao, Guijuan; Liu, Guipeng; Wei, Hongyuan; Jiao, Chunmei; Yang, Shaoyan E-mail: sh-yyang@semi.ac.cn; Wang, Lianshan; Zhu, Qinsheng

    2014-05-21

    One dimensional electron gas (1DEG) arrays in vicinal GaN/AlGaN heterostructures have been studied. The steps at the interface would lead to the lateral barriers and limit the electron movement perpendicular to such steps. Through a self-consistent Schrödinger-Poisson approach, the electron energy levels and wave functions were calculated. It was found that when the total electron density was increased, the lateral barriers were lowered due to the screening effects by the electrons, and the electron gas became more two-dimension like. The calculated 1DEG densities were compared to the experimental values and good agreements were found. Moreover, we found that a higher doping density is more beneficial to form 1-D like electron gas arrays.

  19. Terrestrial Concentrator PV Modules Based on GaInP/GaAs/Ge TJ Cells and Minilens Panels

    SciTech Connect (OSTI)

    Rumyantsev, V. D.; Sadchikov, N. A.; Chalov, A. E.; Ionova, E. A.; Friedman, D. J.; Glenn, G.

    2006-01-01

    This paper is a description of research activity in the field of cost-effective modules realizing the concept of very high solar concentration with small-aperture area Fresnel lenses and multijunction III-V cells. Structural simplicity and 'all-glass' design are the guiding principles of the corresponding development. The advanced concentrator modules are made with silicone Fresnel lens panels (from 8 up to 144 lenses, each lens is 4 times 4 cm{sup 2} in aperture area) with composite structure. GaInP/GaAs/Ge triple-junction cells with average efficiencies of 31.1 and 34.7% at 1000 suns were used for the modules. Conversion efficiency as high as 26.3% has been measured indoors in a test module using a newly developed large-area solar simulator.

  20. A hole accelerator for InGaN/GaN light-emitting diodes Zi-Hui Zhang, Wei Liu, Swee Tiam Tan, Yun Ji, Liancheng Wang, Binbin Zhu, Yiping Zhang, Shunpeng Lu,

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    GaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, the effectiveness of the hole ac- celerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED. VC 2014 AIP Publishing LLC. [http://dx.doi.org/10

  1. InGaN/GaN light-emitting diode with a polarization tunnel junction Zi-Hui Zhang, Swee Tiam Tan, Zabu Kyaw, Yun Ji, Wei Liu et al.

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    to the enhanced optical output power and external quantum efficiency. Compared to the reference InGaN/GaN LEDs; accepted 29 April 2013; published online 15 May 2013) We report InGaN/GaN light-emitting diodes (LED have been devoted to boosting the optical output power and enhancing the external quantum efficiency

  2. 1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge

    E-Print Network [OSTI]

    Yoon, Soon Fatt

    The effect of different arsenic species (As[subscript 2] or As[subscript 4]) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+n-n+ devices (samples C and D) ...

  3. Graded InxGa1 xAs/GaAs 1.3 m wavelength light emitting diode structures grown with molecular beam epitaxy

    E-Print Network [OSTI]

    Graded InxGa1 xAs/GaAs 1.3 m wavelength light emitting diode structures grown with molecular beam 11 June 1997; accepted for publication 29 September 1997 In this study 1.1­1.3 m wavelength light at a lower cost. Such a technology could have an impact on the economic feasibility of fiber to the home

  4. Si3N4 on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure

    E-Print Network [OSTI]

    Rockett, Angus

    from XPS as a function of photoelectron takeoff angle, initially increased rapidly with nitridation either from the higher temperature or from nitridation of all of the Si, leaving the Si3N4 in direct contact with the GaAs. © 1998 American Vacuum Society. S0734-211X 98 00302-3 I. INTRODUCTION Ga

  5. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2}

    SciTech Connect (OSTI)

    Peter, Sebastian C. [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064 (India); Malliakas, Christos D. [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); Nakotte, Heinze; Kothapilli, Karunakar [Physics Department, New Mexico State University, Las Cruces, NM 88003 (United States); Los Alamos Neutron Science Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Rayaprol, Sudhindra [UGC-DAE Consortium for Scientific Research, Mumbai Centre, BARC, R-5 Shed, Trombay, Mumbai 400085 (India); Schultz, Arthur J. [X-Ray Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Kanatzidis, Mercouri G., E-mail: m-kanatzidis@northwestern.edu [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); Materials Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States)

    2012-03-15

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a=12.2261(20) Angstrom-Sign , b=10.7447(20) Angstrom-Sign , c=8.4754(17) Angstrom-Sign and {beta}=110.288(30) Degree-Sign (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge){sub n}. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a=b=5.9874(6) Angstrom-Sign and c=15.1178(19) Angstrom-Sign . The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{proportional_to}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures. - Graphical abstract: The compounds Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} are obtained from reactions of Yb and Ge in excess liquid gallium. Highlights: Black-Right-Pointing-Pointer Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} are two new polygallides. Black-Right-Pointing-Pointer The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was established using neutron diffraction data. Black-Right-Pointing-Pointer YbGa{sub 4}Ge{sub 2} is one of the rare polar intermetallic compounds. Black-Right-Pointing-Pointer The physical properties of Yb{sub 3}Ga{sub 7}Ge{sub 3} point to a Fermi-liquid regime at low temperature.

  6. Temporally and spatially resolved photoluminescence investigation of (112{sup ¯}2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates

    SciTech Connect (OSTI)

    Liu, B.; Smith, R.; Athanasiou, M.; Yu, X.; Bai, J.; Wang, T.

    2014-12-29

    By means of time-resolved photoluminescence (PL) and confocal PL measurements, temporally and spatially resolved optical properties have been investigated on a number of In{sub x}Ga{sub 1?x}N/GaN multiple-quantum-well (MQW) structures with a wide range of indium content alloys from 13% to 35% on (112{sup ¯}2) semi-polar GaN with high crystal quality, obtained through overgrowth on nanorod templates. With increasing indium content, the radiative recombination lifetime initially increases as expected, but decreases if the indium content further increases to 35%, corresponding to emission in the green spectral region. The reduced radiative recombination lifetime leads to enhanced optical performance for the high indium content MQWs as a result of strong exciton localization, which is different from the behaviour of c-plane InGaN/GaN MQWs, where quantum confined Stark effect plays a dominating role in emission process.

  7. H irradiation effects on the GaAs-like Raman modes in GaAs{sub 1-x}N{sub x}/GaAs{sub 1-x}N{sub x}:H planar heterostructures

    SciTech Connect (OSTI)

    Giulotto, E. Geddo, M.; Patrini, M.; Guizzetti, G.; Felici, M.; Capizzi, M.; Polimeni, A.; Martelli, F.; Rubini, S.

    2014-12-28

    The GaAs-like longitudinal optical phonon frequency in two hydrogenated GaAs{sub 1-x}N{sub x}/GaAs{sub 1-x}N{sub x}:H microwire heterostructures—with similar N concentration, but different H dose and implantation conditions—has been investigated by micro-Raman mapping. In the case of GaAs{sub 0.991}N{sub 0.009} wires embedded in barriers where GaAs-like properties are recovered through H irradiation, the phonon frequency in the barriers undergoes a blue shift with respect to the wires. In GaAs{sub 0.992}N{sub 0.008} wires embedded in less hydrogenated barriers, the phonon frequency exhibits an opposite behavior (red shift). Strain, disorder, phonon localization effects induced by H-irradiation on the GaAs-like phonon frequency are discussed and related to different types of N-H complexes formed in the hydrogenated barriers. It is shown that the red (blue) character of the frequency shift is related to the dominant N-2H (N-3H) type of complexes. Moreover, for specific experimental conditions, an all-optical determination of the uniaxial strain field is obtained. This may improve the design of recently presented devices that exploit the correlation between uniaxial stress and the degree of polarization of photoluminescence.

  8. ComPASS! SciDAC-3! Scalable'Arbitrary-Order'Pseudo-Spectral'Electromagne9c'Solver''

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 OutreachProductswsicloudwsiclouddenDVA N C E D BGene NetworkNuclearDNP 20082Innovation PortalComPASS!

  9. The impact of sport, urbanicity, gender, and demographics on high school coaches' perceptions of no pass, no play in Educational Service Center, Region 20, Texas 

    E-Print Network [OSTI]

    Kennedy, Jennifer Johnson

    2009-05-15

    The major purpose of this study was to determine how no pass, no play has impacted the perceptions of academic player eligibility as perceived by high school coaches in Educational Service Center, Region 20, Texas. Variables ...

  10. Low dimensional GaAs/air vertical microcavity lasers

    SciTech Connect (OSTI)

    Gessler, J.; Steinl, T.; Fischer, J.; Höfling, S.; Schneider, C.; Kamp, M.; Mika, A.; S?k, G.; Misiewicz, J.

    2014-02-24

    We report on the fabrication of gallium arsenide (GaAs)/air distributed Bragg reflector microresonators with indium gallium arsenide quantum wells. The structures are studied via momentum resolved photoluminescence spectroscopy which allows us to investigate a pronounced optical mode quantization of the photonic dispersion. We can extract a length parameter from these quantized states whose upper limit can be connected to the lateral physical extension of the microcavity via analytical calculations. Laser emission from our microcavity under optical pumping is observed in power dependent investigations.

  11. Distribution of bismuth atoms in epitaxial GaAsBi

    SciTech Connect (OSTI)

    Sales, David [Universidad de Cadiz, Spain; Guerreo, E. [Universidad de Cadiz, Spain; Rodrigo, J.F. [Universidad de Cadiz, Spain; Galindo, P.L. [Universidad de Cadiz, Spain; Yanez, A. [University of Cadiz, Spain; Shafi, M. [University of Nottingham, Nottingham UK; Khatab, A. [University of Nottingham, Nottingham UK; Mari, R.H. [University of Nottingham, Nottingham UK; Henini, M. [University of Nottingham, Nottingham UK; Novikov, S. [University of Nottingham, Nottingham UK; Chisholm, Matthew F [ORNL; Molina, S.I. [Universidad de Cadiz, Spain

    2011-01-01

    The distribution of Bi atoms in epitaxial GaAs{sub (1-x)}Bi{sub x} is analyzed through aberration-corrected Z-contrast images. The relation between the atomic number and the intensity of the images allows quantifying the distribution of Bi atoms in this material. A bidimensional map of Bi atoms is extracted showing areas where nanoclustering is possible and evidencing the location of Bi at As-substitutional positions in the lattice. The distribution of Bi atoms differs from a random spatial pattern of Bi atoms in the material.

  12. Structure, transport and thermal properties of UCoGa

    SciTech Connect (OSTI)

    Purwanto, A.; Robinson, R.A.; Prokes, K.

    1994-04-01

    By means of neutron powder diffraction, we find that UCoGa crystallizes in the hexagonal ZrNiAl structure and orders ferromagnetically at low temperatures with magnetic moments stacked along the c axis. The magnetic-ordering temperature is reflected in anomalies in the temperature dependencies of the electrical resistivity and the specific heat at Tc = 47 K. Furthermore, the strong anisotropy in the electrical resistivity for i {parallel} c and i {perpendicular} c indicates a significant contribution of the magnetic anisotropy to the electrical resistivity.

  13. Economic and Conservation Evaluation of Capital Renovation Projects: Maverick County Water Control and Improvement District No. 1 (Eagle Pass) – Lining Main Canal – Preliminary 

    E-Print Network [OSTI]

    Rister, M. Edward; Lacewell, Ronald D.; Sturdivant, Allen W.; Robinson, John R.C.; Popp, Michael C.

    2004-01-01

    Evaluation of Capital Renovation Projects: Maverick County Water Control and Improvement District No. 1 (Eagle Pass) – Lining Main Canal – Preliminary M. Edward Rister Ronald D. Lacewell Allen W. Sturdivant John R. C. Robinson Michael C. Popp Texas Water... stakeholders and the public. This is anticipated to occur sometime in mid 2004. TR-248 January 2004 Economic and Conservation Evaluation of Capital Renovation Projects: Maverick County Water Control and Improvement District No. 1 (Eagle Pass) – Lining Main...

  14. Economic and Conservation Evaluation of Capital Renovation Projects: Maverick County Water Control and Improvement District No. 1 (Eagle Pass) – Lining Main Canal – Final 

    E-Print Network [OSTI]

    Rister, M. Edward; Lacewell, Ronald D.; Sturdivant, Allen W.; Robinson, John R.C.; Popp, Michael C.

    2004-01-01

    Evaluation of Capital Renovation Projects: Maverick County Water Control and Improvement District No. 1 (Eagle Pass) – Lining Main Canal – Final M. Edward Rister Ronald D. Lacewell Allen W. Sturdivant John R. C. Robinson Michael C. Popp Texas Water Resources... April 2004 Economic and Conservation Evaluation of Capital Renovation Projects: Maverick County Water Control and Improvement District No. 1 (Eagle Pass) – Lining Main Canal – Final M. Edward Rister Ronald D. Lacewell Allen W. Sturdivant John R. C...

  15. Geology and geothermal resources of the Santiam Pass area of the Oregon Cascade Range, Deschutes, Jefferson and Linn Counties, Oregon. Final report

    SciTech Connect (OSTI)

    Hill, B.E. [ed.

    1992-10-01

    This open-file report presents the results of the Santiam Pass drilling program. The first phase of this program was to compile all available geological, geophysical and geothermal data for the Santiam Pass area and select a drill site on the basis of these data (see Priest and others, 1987a), A summary of the drilling operations and costs associated with the project are presented in chapter 1 by Hill and Benoit. An Overview of the geology of the Santiam Pass area is presented by Hill and Priest in chapter 2. Geologic mapping and isotopic age determinations in the Santiam Pass-Mount Jefferson area completed since 1987 are summarized in chapter 2. One of the more important conclusions reached in chapter 2 is that a minimum of 2 km vertical displacement has occurred in the High Cascade graben in the Santiam Pass area. The petrology of the Santiam Pass drill core is presented by Hill in chapter 3. Most of the major volcanic units in the core have been analyzed for major, minor, and trace element abundances and have been studied petrographically. Three K-Ar ages are interpreted in conjunction with the magnetostratigraphy of the core to show that the oldest rocks in the core are approximately 1.8 Ma. Geothermal and geophysical data collected from the Santiam Pass well are presented by Blackwell in chapter 4. The Santiam Pass well failed to penetrate beneath the zone of lateral groundwater flow associated with highly permeable Quaternary volcanic rocks. Calculated geothermal gradients range from about 50{degree}C/km at depth 700-900 m, to roughly 110{degree}C/km from 900 m to the bottom of the well at 929 m. Heat-flow values for the bottom part of the hole bracket the regional average for the High Cascades. Blackwell concludes that heat flow along the High Cascades axis is equal to or higher than along the western edge of the High Cascades.

  16. Investigation of defect properties in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy

    E-Print Network [OSTI]

    Anderson, Timothy J.

    Renewable Energy Lab, Golden, CO 80401, USA Received 1 July 2003; received in revised form 1 January 2004 information about the defect types, their capture cross-sections, and energy levels and densities in the CIGS Renewable Energy Laboratory (NREL) was found to contain three minority-carrier (elec- tron) traps and a 13

  17. Status of the accretion flow solution in the Golden Jubilee year of the discovery of extra-solar X-ray Sources

    E-Print Network [OSTI]

    Chakrabarti, Sandip K

    2013-01-01

    Fifty years have just passed since the first discovery of the extra-solar X-ray sources by Giacconi and his team which we know today to be some stellar mass black holes. By 1973, not only a catalog of these enigmatic objects were made, and their spectra were obtained. Today, forty years have passed since the revolutionary idea of the thin, axisymmetric, Keplerian, disk model by Shakura and Sunyaev was published. Yet, the complete predictability of their radiative properties remains as illusive as ever. The only available and self-consistent solution to date is the generalized viscous transonic flow solutions where both heating and cooling effects are included. I demonstrate that the latest `Avatar' of the accretion/outflow picture, the Generalized Two Component Advective Flow (GTCAF), is capable of explaining almost all the black hole observational results, when the results of the time dependent simulation of viscous and radiative processes are also taken into consideration. I also discuss the problems with p...

  18. Updated Search for Spectral Lines from Galactic Dark Matter Interactions with Pass 8 Data from the Fermi Large Area Telescope

    E-Print Network [OSTI]

    ,

    2015-01-01

    Dark matter in the Milky Way may annihilate directly into gamma rays, producing a monoenergetic spectral line. Therefore, detecting such a signature would be strong evidence for dark matter annihilation or decay. We search for spectral lines in the Fermi Large Area Telescope observations of the Milky Way halo in the energy range 200 MeV to 500 GeV using analysis methods from our most recent line searches. The main improvements relative to previous works are our use of 5.8 years of data reprocessed with the Pass 8 event-level analysis and the additional data resulting from the modified observing strategy designed to increase exposure of the Galactic center region. We searched in five sky regions selected to optimize sensitivity to different theoretically-motivated dark matter scenarios and find no significant detections. In addition to presenting the results from our search for lines, we also investigate the previously reported tentative detection of a line at 133 GeV using the new Pass 8 data.

  19. Enhanced Magnetism of Fe3O4 Nanoparticles with Ga Doping

    SciTech Connect (OSTI)

    Pool, V. L.; Klem, M. T.; Chorney, C. L.; Arenholz, E.; Idzerda, Y.U.

    2010-10-22

    Magnetic (Ga{sub x}Fe{sub 1-x}){sub 3}O{sub 4} nanoparticles with 5%-33% gallium doping (x = 0.05-0.33) were measured using x-ray absorption spectroscopy and x-ray magnetic circular dichroism to determine that the Ga dopant is substituting for Fe{sub 3+} as Ga{sub 3+} in the tetrahedral A-site of the spinel structure, resulting in an overall increase in the total moment of the material. Frequency-dependent alternating-current magnetic susceptibility measurements showed these particles to be weakly interacting with a reduction of the cubic anisotropy energy term with Ga concentration. The element-specific dichroism spectra show that the average Fe moment is observed to increase with Ga concentration, a result consistent with the replacement of A-site Fe by Ga.

  20. Low-cost, high-efficiency solar cells utilizing GaAs-on-Si technology

    SciTech Connect (OSTI)

    Vernon, S.M. )

    1993-04-01

    This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, [approximately] 1 [times] 10[sup 5] cm[sup [minus]5], as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 [times]10[sup 7] cm[sup [minus]2]. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells.

  1. Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy

    SciTech Connect (OSTI)

    Reuters, Benjamin; Finken, M.; Wille, A.; Kalisch, H.; Vescan, A.; Hollaender, B.; Heuken, M.

    2012-11-01

    Quaternary AlInGaN layers were grown on conventional GaN buffer layers on sapphire by metal organic vapour phase epitaxy at different surface temperatures and different reactor pressures with constant precursor flow conditions. A wide range in compositions within 30-62% Al, 5-29% In, and 23-53% Ga was covered, which leads to different strain states from high tensile to high compressive. From high-resolution x-ray diffraction and Rutherford backscattering spectrometry, we determined the compositions, strain states, and crystal quality of the AlInGaN layers. Atomic force microscopy measurements were performed to characterize the surface morphology. A critical strain value for maximum In incorporation near the AlInGaN/GaN interface is presented. For compressively strained layers, In incorporation is limited at the interface as residual strain cannot exceed an empirical critical value of about 1.1%. Relaxation occurs at about 15 nm thickness accompanied by strong In pulling. Tensile strained layers can be grown pseudomorphically up to 70 nm at a strain state of 0.96%. A model for relaxation in compressively strained AlInGaN with virtual discrete sub-layers, which illustrates the gradually changing lattice constant during stress reduction is presented.

  2. DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    Sites, James R.

    OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important contributor to the global energy demand by the mid-21st-century. Cu(In,Ga)Se2 (CIGS) solar cells, which haveDISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler

  3. Investigation of photoexcited parallel conduction in GaAs/AlGaAs heterostructures in the quantum limit 

    E-Print Network [OSTI]

    Kobiela, Pawel Stanislaw

    1986-01-01

    conduction paths, one in the 2-DEG (medium 1) and the second an another medium (like AlGaAs), the conductivity tensor can be expressed as o' = rri + ap. Further analysis can be carried out by considering two separate limits: low and high magnetic fields.... The interval between the current pulses depended on the temperature and varied from 2-3 sec. at 10 K to about 1 min. at 15 mK. For each magnetic field scan between 0 and 7. 5 T about 500 readings were taken for l&oth current directions. As mentioned before...

  4. High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier

    SciTech Connect (OSTI)

    Petukhov, A. A., E-mail: andrey-rus29@rambler.ru; Zhurtanov, B. E.; Kalinina, K. V.; Stoyanov, N. D.; Salikhov, H. M.; Mikhailova, M. P.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-09-15

    The electroluminescent properties of an n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with a high potential barrier in the conduction band (large conduction-band offset) at the n-GaSb/n-InGaAsSb type-II heterointerface ({Delta}E{sub c} = 0.79 eV) are studied. Two bands with peaks at 0.28 and 0.64 eV at 300 K, associated with radiative recombination in n-InGaAsSb and n-GaSb, respectively, are observed in the electroluminescence (EL) spectrum. In the entire temperature range under study, T = 290-480 K, additional electron-hole pairs are formed in the n-InGaAsSb active region by impact ionization with hot electrons heated as a result of the conduction-band offset. These pairs contribute to radiative recombination, which leads to a nonlinear increase in the EL intensity and output optical power with increasing pump current. A superlinear increase in the emission power of the long-wavelength band is observed upon heating in the temperature range T = 290-345 K, and a linear increase is observed at T > 345 K. This work for the first time reports an increase in the emission power of a light-emitting diode structure with increasing temperature. It is shown that this rise is caused by a decrease in the threshold energy of the impact ionization due to narrowing of the band gap of the active region.

  5. Low-temperature charge transport in Ga-acceptor nanowires implanted by focused-ion beams

    E-Print Network [OSTI]

    Robinson, SJ

    2008-01-01

    Low-Temperature Charge Transport in Ga-Acceptor Nanowiresare highly nonlinear at low temperatures, and a thresholdmetallic conductance at low temperatures could be achieved

  6. Vacancy defects in as-grown and neutron irradiated GaP studied by positrons

    SciTech Connect (OSTI)

    Dlubek, G.; Bruemmer, O.; Polity, A.

    1986-08-18

    Positron lifetime and Doppler-broadening measurements have been used to study vacancy defects in n-italic-type GaP. Vacancies in the P sublattice with a concentration of some 10/sup 17/ cm/sup -3/ were observed in as-grwon GaP. The vacancies disappear during annealing at 500--800 /sup 0/C. In neutron-irradiated GaP positrons are trapped by Ga vacancies which anneal out in two stages situated at 300--550 /sup 0/C and 550--700 /sup 0/C.

  7. Structural defects in GaN revealed by Transmission Electron Microscopy

    SciTech Connect (OSTI)

    Liliental-Weber, Zuzanna

    2014-04-18

    This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

  8. Raman scattering in InAs/AlGaAs quantum dot nanostructures E. Giulotto,1,a

    E-Print Network [OSTI]

    As upper CL UCL with the same composition of LCL, and a 10 nm thick GaAs cap layer. Buffers and LCLs were

  9. Antimonide-Based Long-Wavelength Lasers on GaAs Substrates

    SciTech Connect (OSTI)

    KLEM,JOHN F.; Blum, O.

    2000-08-17

    We have investigated the use of GaAsSb in edge-emitting laser active regions, in order to obtain lasing near 1.3 {micro}m. Single quantum well GaAsSb devices display electroluminescence at wavelengths as long as 1.34 {micro}m, but substantial blueshifts occur under high injection conditions. GaAsSb single quantum well edge emitters have been obtained which lase at 1.275 {micro}m with a room-temperature threshold current density as low as 535 A/cm{sup 2}. Modification of the basic GaAsSb/GaAs structure with the addition of InGaAs layers results in a strongly type-II band alignment which can be used to further extend the emission wavelength of these devices. Using GaAsSb/InGaAs active regions, lasers emitting at 1.17 {micro}m have been obtained with room-temperature threshold current densities of 120 A/cm{sup 2}, and devices operating at 1.29 {micro}m have displayed thresholds as low as 375 A/cm{sup 2}. Characteristic temperatures for devices employing various GaAsSb-based active regions have been measured to be 60-73 K.

  10. Interface Reactions and Electrical Characteristics of Au/GaSb Contacts

    SciTech Connect (OSTI)

    H. Ehsani; R.J. Gutmann; G.W. Charache

    2000-07-07

    The reaction of Au with GaSb occurs at a relatively low temperature (100 C). Upon annealing, a AuSb{sub 2} compound and several Au-Ga phases are produced. Phase transitions occur toward higher Ga concentration with increasing annealing temperatures. Furthermore, the depth of the contact also increases with increased annealing temperature. They found that the AuSb{sub 2} compound forms on the GaSb surface, with the compound crystal partially ordered with respect to the substrate. The transition of Schottky- to ohmic-contact behavior in Au/n-type GaSb occurs simultaneously with the formation of the AuGa compound at about a 250 C annealing temperature. This ohmic contact forms without the segregation of dopants at the metallic compound/GaSb interface. Therefore it is postulated that transition from Schottky- to ohmic-contact behavior is obtained through a series of tunneling transitions of electrons through defects in the depletion region in the Au/n-type GaSb contacts. Contact resistivities of 6-7 x 10{sup -6} {Omega}-cm{sup 2} were obtained with the annealing temperature between 300 and 350 C for 30 seconds. In Au/p-type GaSb contacts, the resistivity was independent of the annealing temperature. This suggested that the carrier transport in p-type contact dominated by thermionic emission.

  11. A comparison of the structure and localized magnetism in Ce{sub 2}PdGa{sub 12} with the heavy fermion CePdGa{sub 6}

    SciTech Connect (OSTI)

    Macaluso, Robin T. [Department of Chemistry, Louisiana State University, Baton Rouge, LA 70803 (United States); Millican, Jasmine N. [Department of Chemistry, Louisiana State University, Baton Rouge, LA 70803 (United States); Nakatsuji, Satoru [Department of Physics, Kyoto University, Kyoto, Japan 606-8502 (Japan); Lee, Han-Oh [Department of Physics, University of California, Davis, CA 95616 (United States); Carter, B. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Moreno, Nelson O. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Fisk, Zachary [Department of Physics, University of California, Davis, CA 95616 (United States); Chan, Julia Y. [Department of Chemistry, Louisiana State University, Baton Rouge, LA 70803 (United States)]. E-mail: jchan@lsu.edu

    2005-11-15

    Single crystals of Ce{sub 2}PdGa{sub 12} have been synthesized in Ga flux and characterized by X-ray diffraction. This compound crystallizes in the tetragonal P4/nbm space group, Z=2 with lattice parameters of a=6.1040(2)A and c=15.5490(6)A. It shows strongly anisotropic magnetism and orders antiferromagnetically at T{sub N}{approx}11K. A field-induced metamagnetic transition to the ferromagnetic state is observed below T{sub N}. Structure-property relationships with the related heavy-fermion antiferromagnet CePdGa{sub 6} are discussed.

  12. Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions

    SciTech Connect (OSTI)

    Piprek, Joachim, E-mail: piprek@nusod.org [NUSOD Institute LLC, P.O. Box 7204, Newark, Delaware 19714 (United States)

    2014-02-03

    This Letter investigates the efficiency enhancement achieved by tunnel junction insertion into the InGaN/GaN multi-quantum well (MQW) active region of blue light emitting diodes (LEDs). The peak quantum efficiency of such LED exceeds 100%, but the maximum wall-plug efficiency (WPE) hardly changes. However, due to the increased bias, the WPE peaks at much higher input power, i.e., the WPE droop is significantly delayed, and the output power is strongly enhanced. The main physical reason for this improvement lies in the non-uniform vertical carrier distribution typically observed within InGaN MQWs.

  13. InGaP/GaAs Inverted Dual Junction Solar Cells For CPV Applications Using Metal-Backed Epitaxial Lift-Off

    SciTech Connect (OSTI)

    Bauhuis, Gerard J.; Mulder, Peter; Haverkamp, Erik J.; Schermer, John J.; Nash, Lee J.; Fulgoni, Dominic J. F.; Ballard, Ian M.; Duggan, Geoffrey

    2010-10-14

    The epitaxial lift-off (ELO) technique has been combined with inverted III-V PV cell epitaxial growth with the aim of employing thin film PV cells in HCPV systems. In a stepwise approach to the realization of an inverted triple junction on a MELO platform we have first grown a GaAs single junction PV cell to establish the basic layer release process and cell processing steps followed by the growth, fabrication and test of an inverted InGaP/GaAs dual junction structure.

  14. InGaAsN Solar Cells with 1.0eV Bandgap, Lattice Matched to GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Banas, J.J.; Gee, J.M.; Hammons, B.E.; Jones, E.D.; Kurtz, S.R.

    1998-11-24

    The design, growth by metal-organic chemical vapor deposition, and processing of an In{sub 0.07}Ga{sub 0.93}As{sub 0.98}N{sub 0.02} solar Al, with 1.0 ev bandgap, lattice matched to GaAs is described. The hole diffusion length in annealed, n-type InGaAsN is 0.6-0.8 pm, and solar cell internal quantum efficiencies > 70% arc obwined. Optical studies indicate that defects or impurities, from InGAsN doping and nitrogen incorporation, limit solar cell performance.

  15. A novel theoretical model for broadband blue InGaN/GaN superluminescent light emitting diodes

    SciTech Connect (OSTI)

    Moslehi Milani, N.; Mohadesi, V.; Asgari, A.

    2015-02-07

    A broadband superluminescent light emitting diode with In{sub 0.2}Ga{sub 0.8}N/GaN multiple quantum wells (MQWs) active region is investigated. The investigation is based on a theoretical model which includes the calculation of electronic states of the structure, rate equations, and the spectral radiation power. Two rate equations corresponding to MQW active region and separate confinement heterostructures layer are solved self-consistently with no-k selection wavelength dependent gain and quasi-Fermi level functions. Our results show that the superluminescence started in a current of ?120?mA (?7.5?kA/Cm{sup 2}) at 300?K. The range of peak emission wavelengths for different currents is 423–426?nm and the emission bandwidth is ?5?nm in the superluminescence regime. A maximum light output power of 7.59 mW is obtained at 600?mA and the peak modal gain as a function of current indicates logarithmic behavior. Also, the comparison of our calculated results with published experimental data is shown to be in good agreement.

  16. Improved photoluminescence of InGaAsN,,In...GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing

    E-Print Network [OSTI]

    Gilchrist, James F.

    for Photonics, Department of Electrical Computer Engineering, University of Wisconsin­Madison, 1415 Engineering are the hydride sources of AsH3 and PH3 . The trimethyl precursors of gal- lium Ga , aluminum Al , and indium

  17. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes

    SciTech Connect (OSTI)

    Sizov, V. S., E-mail: vsizov@mail.ioffe.ru; Tsatsulnikov, A. F.; Sakharov, A. V.; Lundin, W. V.; Zavarin, E. E.; Cherkashin, N. A. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Hytch, M. J. [National Center for Scientific Research (CNRS), Center for Material Elaboration and Structural Studies (CEMES) (France); Nikolaev, A. E. [Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation); Mintairov, A. M.; He Yan; Merz, J. L. [University of Notre Dame, EE Department (United States)

    2010-07-15

    Optical and light-emitting diode structures with an active InGaN region containing short-period InGaN/GaN superlattices are studied. It is shown that short-period superlattices are thin two-dimensional layers with a relatively low In content that contain inclusions with a high In content 1-3 nm thick. Inclusions manifest themselves from the point of view of optical properties as a nonuniform array of quantum dots involved in a residual quantum well. The use of short-period superlattices in light-emitting diode structures allows one to decrease the concentration of nonradiative centers, as well as to increase the injection of carriers in the active region due to an increase in the effective height of the AlGaN barrier, which in general leads to an increase in the quantum efficiency of light-emitting diodes.

  18. Angular dependence of light trapping in In0.3Ga0.7As/GaAs quantum-well solar cells

    E-Print Network [OSTI]

    Yu, Edward T.

    Angular dependence of light trapping in In0.3Ga0.7As/GaAs quantum-well solar cells X. H. Li,1 P. C trapping in thin-film solar cells via engineered surface morphology or device geometry, scattering,10 In this paper, we describe and demonstrate thin-film quantum-well solar cells that are grown by molecular beam

  19. Atomistic modeling and HAADF investigations of misfit and threading dislocations in GaSb/GaAs hetero-structures for applications in high electron mobility transistors

    SciTech Connect (OSTI)

    Ruterana, Pierre Wang, Yi Chen, Jun Chauvat, Marie-Pierre; El Kazzi, S.; Deplanque, L.; Wallart, X.

    2014-10-06

    A detailed investigation on the misfit and threading dislocations at GaSb/GaAs interface has been carried out using molecular dynamics simulation and quantitative electron microscopy techniques. The sources and propagation of misfit dislocations have been elucidated. The nature and formation mechanisms of the misfit dislocations as well as the role of Sb on the stability of the Lomer configuration have been explained.

  20. Ferromagnetic (Ga,Mn)As nanostructures for spintronic applications

    SciTech Connect (OSTI)

    Wosinski, Tadeusz; Andrearczyk, Tomasz; Figielski, Tadeusz; Makosa, Andrzej; Wrobel, Jerzy; Sadowski, Janusz

    2013-12-04

    Magneto-resistive, cross-like nanostructures have been designed and fabricated by electron-beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga,Mn)As. The nanostructures, composed of two perpendicular nanostripes crossing in the middle of their length, represent four-terminal devices, in which an electric current can be driven through any of the two nanostripes. In these devices, a novel magneto-resistive memory effect, related to a rearrangement of magnetic domain walls in the central part of the device, has been demonstrated. It consists in that the zero-field resistance of a nanostripe depends on the direction of previously applied magnetic field. The nanostructures can thus work as two-state devices providing basic elements of nonvolatile memory cells.