Powered by Deep Web Technologies
Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

EA-1971: Golden Pass LNG Export and Pipeline Project, Texas and Louisiana  

Broader source: Energy.gov [DOE]

The Federal Energy Regulatory Commission (FERC), with DOE as a cooperating agency, announced its intent to prepare an EA to analyze the potential environmental impacts of a proposal to construct and operate natural gas liquefaction and export facilities at the existing Golden Pass liquefied natural gas terminal in Jefferson County, Texas. In June 2014, FERC announced that due to changes in the project location and scope, it would prepare an EIS. See DOE/EIS-0501.

2

EIS-0501: Golden Pass LNG Export and Pipeline Project, Texas and Louisiana  

Broader source: Energy.gov [DOE]

The Federal Energy Regulatory Commission (FERC) is analyzing the potential environmental impacts of a proposal to construct and operate natural gas liquefaction and export facilities at the existing Golden Pass liquefied natural gas terminal in Jefferson County, Texas. The proposal includes three new compressor stations in Jefferson and Orange Counties, Texas, and Calcasieu Parish, Louisiana; a new 3-mile long pipeline in Calcasieu Parish; and modifications to 11 existing interconnections with other pipeline systems. In 2013, FERC announced its intent to prepare an EA and conducted public scoping. (See DOE/EA-1971.) In June 2014, FERC announced that, due to changes in the project location and scope, it would prepare an EIS. DOE, Office of Fossil Energy – a cooperating agency in preparing the EIS – has an obligation under Section 3 of the Natural Gas Act to authorize the import and export of natural gas, including LNG, unless it finds that the import or export is not consistent with the public interest. Additional information is available at http://elibrary.ferc.gov/idmws/search/fercgensearch.asp, search for docket PF13-14.

3

Response of Red-Tailed Hawks and Golden Eagles to Topographical Features, Weather, and Abundance of a Dominant Prey Species at the Altamont Pass Wind Resource Area, California: April 1999-December 2000  

SciTech Connect (OSTI)

Studies have shown that raptors flying within the Altamont Pass WRA are vulnerable to fatal turbine collisions, possibly because of their specific foraging and flight behavior. Between June 1999 and June 2000, I conducted 346.5 hours of raptor observations within the Atlamont Pass WRA. Behavior was recorded in relation to characteristics of the topography (slope aspect, elevation, and inclination), the weather, and ground squirrel abundance, as determined by active burrow entrances. The most significant finding of this study revealed that red-tailed hawks and golden eagles flew more in strong winds than in weak winds, particularly along hillsides facing into prevailing winds (as opposed to hillsides shielded from the wind). This is likely a result of the birds' use of declivity currents for lift during flights. These results suggest that certain combinations of topography and weather produce wind currents that are sought out by foraging red-tailed hawks and golden eagles within the Altamont Pass WRA. To decrease raptor mortality, mitigation measures can be targeted to specific areas likely to attract foraging raptors because of their capacity to create particularly favorable wind currents.

Hoover, S.

2002-06-01T23:59:59.000Z

4

Golden Gate Park Marina Blvd.  

E-Print Network [OSTI]

St. Eureka S.VanNessAve. M arket St. Broadway St. To Golden Gate Bridge H ow ard St. Folsom St. Bryant St. 10 North / Golden Gate Bridge 2. Exit I­280 North toward Downtown San Francisco 3. Exit Mariposa St. toward80 280 Presidio Golden Gate Park Lincoln Park Buena Vista Park 101 101 101 101 1 1 Marina Blvd. Bay

Derisi, Joseph

5

Golden Cooler: Order (2013-CE-5345)  

Broader source: Energy.gov [DOE]

DOE ordered Golden Cooler to pay a $8,000 civil penalty after finding Golden Cooler had failed to certify that certain models of walk-in cooler and freezer components comply with the applicable energy conservation standards.

6

Golden Opportunity: Compromise Agreement (2013-SE-1418)  

Broader source: Energy.gov [DOE]

DOE and Golden Opportunity, Inc. entered into a Compromise Agreement to resolve a case involving the distribution in commerce of noncompliant freezers.

7

Golden Photon | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revision hasInformation Earth's Heat Jump to:Photon Place: Golden, CO Website: http://www.goldenphoton.com

8

Golden Opportunity: Proposed Penalty (2014-CE-20003)  

Broader source: Energy.gov [DOE]

DOE alleged in a Notice of Proposed Civil Penalty that Golden Opportunity, Inc. failed to certify room air conditioners, central air conditioners/heat pumps, and residential clothes washers as compliant with the applicable energy conservation standards.

9

Golden Cooler: Proposed Penalty (2013-CE-5345)  

Broader source: Energy.gov [DOE]

DOE alleged in a Notice of Proposed Civil Penalty that Golden Cooler failed to certify a variety of walk-in cooler or freezer components as compliant with the applicable energy conservation standards.

10

Golden, Colorado: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation,Ohio: Energy Resources Jump to:GloriaGoldenGolden, Colorado: Energy

11

Golden, Colorado: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation,Ohio: Energy Resources Jump to:GloriaGoldenGolden, Colorado: EnergyJump to:

12

Golden, Illinois: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation,Ohio: Energy Resources Jump to:GloriaGoldenGolden, Colorado: EnergyJump

13

The Defeat of the Golden Gate Authority: Regional Planning and Local Power  

E-Print Network [OSTI]

Regional Politics and the Golden Gate Bridge, Philadelphia:Politics and the Golden Gate Bridge, won the Abel WolmanBridge and the Golden Gate Bridge. Moreover, interregional

Dyble, Louise Nelson

2012-01-01T23:59:59.000Z

14

Structural Transition of Gold Nanoclusters: From the Golden Cage...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Nanoclusters: From the Golden Cage to the Golden Pyramid . Abstract: How nanoclusters transform from one structural type to another as a function of size is a critical issue in...

15

TOURISM IN GOLDEN BAY Economic Impacts & Resource Use Issues  

E-Print Network [OSTI]

TOURISM IN GOLDEN BAY Economic Impacts & Resource Use Issues - Preliminary Report - June 2000 NZ Tourism Research Institute Victoria University of Wellington Auckland University of Technology #12;INTRODUCTION Golden Bay's tourism industry faces a number of pressing issues. Intensifying competition

16

2012 Annual Planning Summary for Golden Field Office  

Broader source: Energy.gov [DOE]

The ongoing and projected Environmental Assessments and Environmental Impact Statements for 2012 and 2013 within Golden Field Office.

17

Golden Valley County Secondary Data Analysis  

E-Print Network [OSTI]

Infarction prevalence (Heart Attack) 4.3% 4.1% 6.0% All Sites Cancer 510.8 455.5 543.2 1 Community County1 Montana1,2 Nation2 1. Heart Disease 2. Cancer 3. Unintentional Injuries** 1. Cancer 2. Heart Disease 3.CLRD* 1. Heart Disease 2. Cancer 3. CLRD* #12; Golden Valley County Secondary Data

Maxwell, Bruce D.

18

EIS-0501: Golden Pass LNG Export and Pipeline Project, Texas and Louisiana  

Broader source: Energy.gov (indexed) [DOE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarly Career Scientists'Montana.Program - LibbyofThisStatement | Department of333Energy SUMMARYCounties,|

19

SEMI-ANNUAL REPORTS FOR GOLDEN PASS PRODUCTS LLC - FE DKT. NO. 12-88-LNG -  

Energy Savers [EERE]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartment of Energy fromCommentsRevolving Loan FundsDepartment ofNO. 3600 (FTA)LLC -3290

20

Golden Pass, TX Natural Gas Liquefied Natural Gas Imports (price) (Dollars  

Gasoline and Diesel Fuel Update (EIA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelines About U.S.30Natural Gas Glossary529 6330 0 1 0 058.5 57.1CubicVehicle Fuel2.47 441per

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Golden Pass, TX Natural Gas Liquefied Natural Gas Imports (price) from  

Gasoline and Diesel Fuel Update (EIA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelines About U.S.30Natural Gas Glossary529 6330 0 1 0 058.5 57.1CubicVehicle Fuel2.47

22

Golden Pass, TX Natural Gas Liquefied Natural Gas Imports (price) from  

Gasoline and Diesel Fuel Update (EIA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelines About U.S.30Natural Gas Glossary529 6330 0 1 0 058.5 57.1CubicVehicle Fuel2.47Qatar

23

Golden Pass, TX Natural Gas Liquefied Natural Gas Imports from Qatar  

Gasoline and Diesel Fuel Update (EIA)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelines About U.S.30Natural Gas Glossary529 6330 0 1 0 058.5 57.1CubicVehicle

24

SEMI-ANNUAL REPORTS FOR GOLDEN PASS PRODUCTS LLC - FE DKT. NO. 12-88-LNG -  

Office of Environmental Management (EM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "of EnergyEnergyENERGY TAXBalancedDepartmentRestrictions onSB Electronics BreaksSEB3620LLC - FE DKT.LLCORDER

25

Paying the Toll: A Political History of the Golden Gate Bridge and Highway District, 1923-1971  

E-Print Network [OSTI]

Gate: the Construction of the Golden Gate Bridge and HighwayCommittee on Golden Gate Bridge and Highway District,versus the Golden Gate Bridge . . . . . . . . . . . . . . .

Dyble, Amy Louise Nelson

2003-01-01T23:59:59.000Z

26

Golden Triangle Energy | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation,Ohio: Energy Resources Jump to:GloriaGolden State Renewable EnergyTriangle

27

Golden Turbines LLC | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation,Ohio: Energy Resources Jump to:GloriaGolden State Renewable

28

Battling Golden Algae: Results suggest preventative lake management approaches  

E-Print Network [OSTI]

14 tx H2O Winter 2011 Story by Danielle Supercinski Battling golden algae Results suggest preventative lake management approaches Golden algae blooms, or the explosive growth of algae, are known to be toxic, but recent #28;ndings from.... Bryan Brooks at Baylor University, working jointly, recently completed the Lake Granbury and Lake Whitney Assessment Initiative project studying the biology and ecology of golden algae (Prymnesium parvum) in Texas lakes. First appearing in Texas...

Supercinski, Danielle

2011-01-01T23:59:59.000Z

29

Battling golden algae: Results suggest preventative lake managment approaches  

E-Print Network [OSTI]

14 tx H2O Winter 2011 Story by Danielle Supercinski Battling golden algae Results suggest preventative lake management approaches Golden algae blooms, or the explosive growth of algae, are known to be toxic, but recent #28;ndings from.... Bryan Brooks at Baylor University, working jointly, recently completed the Lake Granbury and Lake Whitney Assessment Initiative project studying the biology and ecology of golden algae (Prymnesium parvum) in Texas lakes. First appearing in Texas...

Supercinski, Danielle

2011-01-01T23:59:59.000Z

30

Alternative Fuels Data Center: Golden Eagle Distributors Inc...  

Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

promotes global sustainability. Golden Eagle was also recognized for its recycling and energy-efficiency initiatives, employee carpooling, and its green transportation program....

31

REQUEST BY GOLDEN TECHNOLOGIES, COMPANY, INC., FOR AN ADVANCE...  

Broader source: Energy.gov (indexed) [DOE]

products that will result from the subcontract. W(A)-94-017 ORO-581 WAIVER ACTION ABSTRACT REQUESTOR CONTRACT SCOPE OF WORK RATIONALE FOR DECISION DISPOSITION Golden...

32

Golden Valley Electric Association- Sustainable Natural Alternative Power (SNAP) Program  

Broader source: Energy.gov [DOE]

Golden Valley Electric Association's (GVEA) SNAP program encourages members to install renewable energy generators and connect them to the utility's electrical distribution system by offering an...

33

Paying the Toll: A Political History of the Golden Gate Bridge and Highway District, 1923-1971  

E-Print Network [OSTI]

Final Environmental Statement Golden Gate Bridge, HighwayGolden Gate Bridge Highway and Transportation District, Draft Environmental

Dyble, Amy Louise Nelson

2003-01-01T23:59:59.000Z

34

E-Print Network 3.0 - area golden colorado Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

golden colorado Search Powered by Explorit Topic List Advanced Search Sample search results for: area golden colorado Page: << < 1 2 3 4 5 > >> 1 Environmental Health and Safety...

35

Golden Field Office 15013 Denver West Parkway  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeatMulti-Dimensional Subject: Guidance forGeospatialSession)ShopTheDepartmentGo Golden

36

Golden Valley Wind Park | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revision hasInformation Earth's Heat Jump to:Photon Place: Golden, CO Website:Panhandle Wind Ranch

37

International Trade in Natural Gas: Golden Age of LNG?  

E-Print Network [OSTI]

International Trade in Natural Gas: Golden Age of LNG? Yichen Du and Sergey Paltsev Report No. 271;1 International Trade in Natural Gas: Golden Age of LNG? Yichen Du* and Sergey Paltsev* Abstract The introduction of liquefied natural gas (LNG) as an option for international trade has created a market for natural gas where

Gabrieli, John

38

Cognitive training in schizophrenia: golden age or wild west?  

E-Print Network [OSTI]

Golden Age or Wild West? Sophia Vinogradov, Melissa Fisher,Address correspondence to Sophia Vinogradov, M.D. , 116A–Francisco, CA 94121; E-mail: sophia. vinogradov@ucsf.edu.

Vinogradov, Sophia

2013-01-01T23:59:59.000Z

39

Golden Valley Electric Association- Commercial Lighting Retrofit Rebate Program  

Broader source: Energy.gov [DOE]

BusBusiness $ense is a Golden Valley Electric Association (GVEA) program designed to increase the efficiency with which energy is used on GVEA's system. It provides rebates of up to $20,000 to...

40

REQUEST BY GOLDEN TECHNOLOGIES COMPANY, INC. FOR AN ADVANCE WAIVER...  

Broader source: Energy.gov (indexed) [DOE]

and U.S. Competitiveness clauses will be added W(A)-94-008 ORO-575 WAIVER ACTION ABSTRACT REQUESTOR CONTRACT SCOPE OF WORK RATIONALE FOR DECISION DISPOSITION Golden...

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

A golden opportunity: Researchers making progress in understanding toxic algae  

E-Print Network [OSTI]

tx H2O | pg. 20 cientists at three Texas universities investigating golden algae, its explosive growth, and its deadly toxins have dis- covered an apparent competition between golden algae and blue green algae in certain Texas lakes.... Understanding this competition could lead them closer to controlling this harmful algae, the researchers said. ?Our biggest finding so far,? said Dr. Daniel Roelke of Texas AgriLife Research and one of the investigators, ?is that there appears to be a...

Wythe, Kathy

2008-01-01T23:59:59.000Z

42

Impact of Foliar Fertilizer Containing Iodine on “Golden Delicious” Apple Trees  

E-Print Network [OSTI]

on marketable Golden Delicious/M.9 apple production. At thecontaining fertilizer on apple fruits firmness and theirold “Golden Delicious/M.9” apple trees Trees were spaced at

Szwonek, Eugeniusz

2009-01-01T23:59:59.000Z

43

National Renewable Energy Laboratory 1617 Cole Boulevard, Golden, Colorado 80401-3393  

E-Print Network [OSTI]

#12;National Renewable Energy Laboratory 1617 Cole Boulevard, Golden, Colorado 80401-3393 303. Margolis National Renewable Energy Laboratory Golden, Colorado G. Kuswa, J. Torres, and W. Bower Sandia

44

Sea Ice in the Global Climate System Kenneth M. Golden1  

E-Print Network [OSTI]

Sea Ice in the Global Climate System Kenneth M. Golden1 , Elizabeth Hunke2 , Cecilia Bitz3 Figure 2. The Antarctic sea ice pack with an open lead in the distance. (K. M. Golden) Figure 1. Pancake ice in the Southern Ocean off the coast of East Antarctica. (K. M. Golden

Golden, Kenneth M.

45

A Link Between Black Holes and the Golden Ratio  

E-Print Network [OSTI]

We consider a variational formalism to describe black holes solution in higher dimensions. Our procedure clarifies the arbitrariness of the radius parameter and, in particular, the meaning of the event horizon of a black hole. Moreover, our formalism enables us to find a surprising link between black holes and the golden ratio.

J. A. Nieto

2011-06-02T23:59:59.000Z

46

Academic Programs and Policy 401 Golden Shore, 6th Floor  

E-Print Network [OSTI]

Academic Programs and Policy 401 Golden Shore, 6th Floor Long Beach, CA 90802-4210 www for graduation is specified (not just the total for the major): _______ the proposed bachelor's program requires no fewer and no more than 120 units _______ proposed bachelor's degree programs

Ponce, V. Miguel

47

Portland Cement Concrete Pavement Shannon Golden, Alabama DOT  

E-Print Network [OSTI]

Portland Cement Concrete Pavement Shannon Golden, Alabama DOT PORTLAND CEMENT CONCRETE PAVEMENT PROJECT · First in Alabama in more than 25 years! · IM-I059 (342) Etowah County ­ I-59 Concrete Pavement Rehabilitation with Unbonded Concrete Overlay ­ Length: 10.9 miles ­ Thickness: 11.0 to 13.5 inches ­ Volume: 300

48

Disciplined Message Passing Edward A. Lee  

E-Print Network [OSTI]

Program, and the following companies: Agilent, Bosch, HSBC, Lockheed-Martin, National Instruments: Agilent, Bosch, HSBC, Lockheed-Martin, National Instruments, and Toyota. #12;Disciplined Message Passing 2

49

Harvard University Transit Pass Program Non-Received/Incorrect Pass Affidavit  

E-Print Network [OSTI]

their ordered MBTA Commuter Rail, MBTA Boat pass or Private Transit Products OR 2) Have received an incorrect

Gunawardena, Jeremy

50

Golden State Renewable Energy Corporation | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation,Ohio: Energy Resources Jump to:GloriaGolden State Renewable Energy

51

Golden Valley County, Montana: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation,Ohio: Energy Resources Jump to:GloriaGolden State

52

Golden Valley County, North Dakota: Energy Resources | Open Energy  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation,Ohio: Energy Resources Jump to:GloriaGolden StateInformation

53

Golden Valley, Minnesota: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation,Ohio: Energy Resources Jump to:GloriaGolden StateInformationMinnesota:

54

Golden's Bridge, New York: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation,Ohio: Energy Resources Jump to:GloriaGolden

55

Golden Spread Electric Cooperative, Inc. Smart Grid Project | Open Energy  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revision hasInformation Earth's Heat Jump to:Photon Place: Golden, CO Website:

56

Golden Valley Electric Association- Residential Energy Efficiency Rebate Program for Builders  

Broader source: Energy.gov [DOE]

Golden Valley Electric Association’s (GVEA) Builder $ense program targets home builders who install electrical energy efficiency measures during construction of residential buildings. Newly...

57

Direct-bonded GaAs/InGaAs tandem solar cell Katsuaki Tanabe,a  

E-Print Network [OSTI]

. Wanlass National Renewable Energy Laboratory, Golden, Colorado 80401 Received 19 March 2006; accepted 26

Atwater, Harry

58

Golden Opportunity: Order (2014-CE-20003) | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeatMulti-Dimensional Subject: Guidance forGeospatialSession)ShopTheDepartmentGoGolden

59

PIA - IComplaints - Golden Field Office | Department of Energy  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - September 2006 The 2002OpticsPeriodical: VolumeIComplaints - Golden Field Office

60

Golden Bars of Consensus and the Truth Quark  

E-Print Network [OSTI]

Scientists are imprisoned by Golden Bars of Consensus, says Burton Richter (hep-ex/0001012). A case in point is the mass of the Truth Quark. The consensus analysis of the experimental data indicates that the mass of the Truth Quark is about 170 GeV. On the other hand, an alternative analysis of the same data indicates that the mass of the Truth Quark is about 130 GeV. If the design of future experiments, including trigger, event selection, data analysis procedures, error analysis, etc., takes into account only the consensus value, and if the consensus value happens to be incorrect, then results of future experiments might be compromised.

Frank D. Tony Smith; jr

2002-05-14T23:59:59.000Z

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

A golden anniversary for space-based treaty verification  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert SouthwestTechnologies |November 2011A FirstEMSLA golden anniversary for space-based

62

Golden Spread Panhandle Wind Ranch | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revision hasInformation Earth's Heat Jump to:Photon Place: Golden, CO Website:Panhandle Wind Ranch Facility

63

Spherical codes, maximal local packing density, and the golden ratio  

E-Print Network [OSTI]

The densest local packing (DLP) problem in d-dimensional Euclidean space Rd involves the placement of N nonoverlapping spheres of unit diameter near an additional fixed unit-diameter sphere such that the greatest distance from the center of the fixed sphere to the centers of any of the N surrounding spheres is minimized. Solutions to the DLP problem are relevant to the realizability of pair correlation functions for packings of nonoverlapping spheres and might prove useful in improving upon the best known upper bounds on the maximum packing fraction of sphere packings in dimensions greater than three. The optimal spherical code problem in Rd involves the placement of the centers of N nonoverlapping spheres of unit diameter onto the surface of a sphere of radius R such that R is minimized. It is proved that in any dimension, all solutions between unity and the golden ratio to the optimal spherical code problem for N spheres are also solutions to the corresponding DLP problem. It follows that for any packing of nonoverlapping spheres of unit diameter, a spherical region of radius less than or equal to the golden ratio centered on an arbitrary sphere center cannot enclose a number of sphere centers greater than one more than the number that can be placed on the region's surface.

A. B. Hopkins; F. H. Stillinger; S. Torquato

2010-03-18T23:59:59.000Z

64

Message passing with parallel queue traversal  

DOE Patents [OSTI]

In message passing implementations, associative matching structures are used to permit list entries to be searched in parallel fashion, thereby avoiding the delay of linear list traversal. List management capabilities are provided to support list entry turnover semantics and priority ordering semantics.

Underwood, Keith D. (Albuquerque, NM); Brightwell, Ronald B. (Albuquerque, NM); Hemmert, K. Scott (Albuquerque, NM)

2012-05-01T23:59:59.000Z

65

From Shared Memory to Message Passing  

E-Print Network [OSTI]

memory, but pass messages along networks: ... but also smart grids... Smart grid with renewable energy? The node measuring the hottest temperature? Etc. - Election of a leader - Coloring the network (e.g., frequency spectrum allocation in wireless networks), computing independent sets, etc. Complexity evaluation

Schmid, Stefan

66

Temps du pass et temps pass : le prsent refigur dans quelques rcits de science-fiction  

E-Print Network [OSTI]

« Fragments sauvés des ruines de mon esprit »2 , un vaisseau extra-terrestre vient aspirer chronologiquement le passé des individus terrestres et les priver progressivement de leur mémoire : les corps

Boyer, Edmond

67

O?[]O? nuclear ?-decay of ?²Ga  

E-Print Network [OSTI]

information, MARS was focused such that only fully stripped N=Z ions were passed, with the vast majority of them being Ga. The second phase of the experiment was a I3-y coincidence experiment. At the back-end of MARS, a 1" x 1 '!4" x 3" four..., using the Weinberg-Salam model of electroweak interactions, to be [23]: A& ? d, ?= ? [41n(mz/m )+ln(m /m?)+2K+A +" ]. (16) Here mz is the mass of the Z boson, me the proton mass, mx is the low energy cutoff for the second and third terms that arise...

Hyman, Bruce Carl

1999-01-01T23:59:59.000Z

68

Agenda for the PV Module Reliability Workshop, February 26- 27 2013, Golden, Colorado  

Broader source: Energy.gov [DOE]

This document is the agenda and poster session information for the NREL 2013 Photovoltaic Module Reliability Workshop, held on February 26-27, 2013 at the National Renewable Energy Laboratory in Golden, CO.

69

Canopy Characteristics Affecting Avian Reproductive Success: The Golden-cheeked Warbler  

E-Print Network [OSTI]

Kickapoo Cavern State Park and surrounding private properties in Kinney and Edwards counties in the southwest corner of the golden-cheeked warbler breeding range. I derived habitat characteristics from satellite imagery from the US Geological Survey...

Klassen, Jessica Anne

2012-07-16T23:59:59.000Z

70

NREL Pyrheliometer Comparisons (NPC-2003), September 22 - October 3, 2003, Golden, Colorado  

SciTech Connect (OSTI)

NREL Pyrheliometer Comparisons (NPCs) are held annually at the Solar Radiation Research Laboratory (SRRL) in Golden, Colorado. Open to all pyrheliometer owner/operators, the NPC provides an opportunity to determine the unique WRR transfer factor for each participating pyrheliometer.

Stoffel, T.; Reda, I.; Wilcox, S.

2004-07-01T23:59:59.000Z

71

Results of NREL Pyrheliometer Comparisons (NPC1999), October 4-10, 1999, Golden, Colorado  

SciTech Connect (OSTI)

NREL Pyrheliometer Comparisons (NPCs) are held annually at the Solar Radiation Research Laboratory (SRRL) in Golden, Colorado. Open to all pyrheliometer owner/operators, the NPC provides an opportunity to determine the unique WRR transfer factor for each participating pyrheliometer.

Reda, I.; Stoffel, T.; Wilcox, S.

2000-09-01T23:59:59.000Z

72

Waterfront developments in the Middle East case study : the Golden Horn Project, Istanbul, Turkey  

E-Print Network [OSTI]

This thesis examines waterfront developments in the Middle East . It concentrates on the Golden Horn project in Istanbul as it raises a number of issues that are central to any such development in that region. In order for ...

Alamuddin, Hana S. (Hana Slieman)

1987-01-01T23:59:59.000Z

73

The Impact of a Forest Pathogen on the Endangered Golden-cheeked Warbler  

E-Print Network [OSTI]

Oak wilt is a fatal disease of oaks caused by the fungus Ceratocystis fagacearum. Loss or degradation of habitat due to the disease may negatively affect the federally endangered golden-cheeked warbler (Setophaga chrysoparia). To assess the impact...

Stewart, Laura Roe

2012-07-16T23:59:59.000Z

74

TerraPass Inc | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revisionEnvReviewNonInvasiveExplorationUT-gTaguspark Jump to: navigation,TelluricTODO:Tennessee 2REDDtoTerraPass

75

Effects of Tree Species Composition and Foraging Effort on the Productivity of Golden-Cheeked Warblers  

E-Print Network [OSTI]

EFFECTS OF TREE SPECIES COMPOSITION AND FORAGING EFFORT ON THE PRODUCTIVITY OF GOLDEN-CHEEKED WARBLERS A Thesis by MIKE E. MARSHALL Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment... Warblers Copyright 2011 Mike E. Marshall EFFECTS OF TREE SPECIES COMPOSITION AND FORAGING EFFORT ON THE PRODUCTIVITY OF GOLDEN-CHEEKED WARBLERS A Thesis by MIKE E. MARSHALL Submitted to the Office of Graduate Studies of Texas A...

Marshall, Mike E.

2012-07-16T23:59:59.000Z

76

Bird Mortaility at the Altamont Pass Wind Resource Area: March 1998--September 2001  

SciTech Connect (OSTI)

Over the past 15 years, research has shown that wind turbines in the Altamont Pass Wind Resource Area (APWRA) kill many birds, including raptors, which are protected by the Migratory Bird Treaty Act (MBTA), the Bald and Golden Eagle Protection Act, and/or state and federal Endangered Species Acts. Early research in the APWRA on avian mortality mainly attempted to identify the extent of the problem. In 1998, however, the National Renewable Energy Laboratory (NREL) initiated research to address the causal relationships between wind turbines and bird mortality. NREL funded a project by BioResource Consultants to perform this research directed at identifying and addressing the causes of mortality of various bird species from wind turbines in the APWRA.With 580 megawatts (MW) of installed wind turbine generating capacity in the APWRA, wind turbines there provide up to 1 billion kilowatt-hours (kWh) of emissions-free electricity annually. By identifying and implementing new methods and technologies to reduce or resolve bird mortality in the APWRA, power producers may be able to increase wind turbine electricity production at the site and apply similar mortality-reduction methods at other sites around the state and country.

Smallwood, K. S.; Thelander, C. G.

2005-09-01T23:59:59.000Z

77

National Wind Technology Center sitewide, Golden, CO: Environmental assessment  

SciTech Connect (OSTI)

The National Renewable Energy Laboratory (NREL), the nation`s primary solar and renewable energy research laboratory, proposes to expand its wind technology research and development program activities at its National Wind Technology Center (NWTC) near Golden, Colorado. NWTC is an existing wind energy research facility operated by NREL for the US Department of Energy (DOE). Proposed activities include the construction and reuse of buildings and facilities, installation of up to 20 wind turbine test sites, improvements in infrastructure, and subsequent research activities, technology testing, and site operations. In addition to wind turbine test activities, NWTC may be used to support other NREL program activities and small-scale demonstration projects. This document assesses potential consequences to resources within the physical, biological, and human environment, including potential impacts to: air quality, geology and soils, water resources, biological resources, cultural and historic resources, socioeconomic resources, land use, visual resources, noise environment, hazardous materials and waste management, and health and safety conditions. Comment letters were received from several agencies in response to the scoping and predecisional draft reviews. The comments have been incorporated as appropriate into the document with full text of the letters contained in the Appendices. Additionally, information from the Rocky Flats Environmental Technology Site on going sitewide assessment of potential environmental impacts has been reviewed and discussed by representatives of both parties and incorporated into the document as appropriate.

NONE

1996-11-01T23:59:59.000Z

78

Design of the polarization multi-pass Thomson scattering system  

SciTech Connect (OSTI)

A novel configuration of the multi-pass Thomson scattering (TS) system is proposed to improve the time resolution and accuracy of electron temperature measurements by use of a polarization control technique. This configuration can realize a perfect coaxial multi-passing at each pass, and the number of round trips is not limited by the optical configuration. To confirm the feasibility of the new method, we installed this system in the GAMMA 10 plasma system. As a result, the integrated scattering signal of the double-pass configuration is about two times larger than that of the single-pass configuration. These results are in good agreement with the design.

Yasuhara, R.; Yamada, I.; Kawahata, K.; Funaba, H. [National Institute for Fusion Science, 322-6 Oroshi-cho, Toki, Gifu 509-5292 (Japan); Yoshikawa, M.; Morimoto, M.; Shima, Y.; Kohagura, J.; Sakamoto, M.; Nakashima, Y.; Imai, T. [Plasma Research Center, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan); Minami, T. [Institute of Advanced Energy, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan)

2012-10-15T23:59:59.000Z

79

Operator pencil passing through a given operator  

SciTech Connect (OSTI)

Let ? be a linear differential operator acting on the space of densities of a given weight ?{sub 0} on a manifold M. One can consider a pencil of operators ?-circumflex(?)=(?{sub ?}) passing through the operator ? such that any ?{sub ?} is a linear differential operator acting on densities of weight ?. This pencil can be identified with a linear differential operator ?-circumflex acting on the algebra of densities of all weights. The existence of an invariant scalar product in the algebra of densities implies a natural decomposition of operators, i.e., pencils of self-adjoint and anti-self-adjoint operators. We study lifting maps that are on one hand equivariant with respect to divergenceless vector fields, and, on the other hand, with values in self-adjoint or anti-self-adjoint operators. In particular, we analyze the relation between these two concepts, and apply it to the study of diff?(M)-equivariant liftings. Finally, we briefly consider the case of liftings equivariant with respect to the algebra of projective transformations and describe all regular self-adjoint and anti-self-adjoint liftings. Our constructions can be considered as a generalisation of equivariant quantisation.

Biggs, A., E-mail: khudian@manchester.ac.uk, E-mail: adam.biggs@student.manchester.ac.uk; Khudaverdian, H. M., E-mail: khudian@manchester.ac.uk, E-mail: adam.biggs@student.manchester.ac.uk [School of Mathematics, University of Manchester, Oxford Road, Manchester M13 9PL (United Kingdom)

2013-12-15T23:59:59.000Z

80

1.Physics Department, Colorado School of Mines, Golden, CO 2. National Renewable Energy Laboratory, Golden, CO 3. United Solar Ovonic, LLC Troy, MI, United States THERMAL ACTIVATION OF DEEP OXYGEN DEFECT FORMATION AND HYDROGEN EFFUSION  

E-Print Network [OSTI]

1.Physics Department, Colorado School of Mines, Golden, CO 2. National Renewable Energy Laboratory, Golden, CO 3. United Solar Ovonic, LLC Troy, MI, United States BACKGROUND THERMAL ACTIVATION OF DEEP was partially supported by a DOE grant through United Solar Ovonics, Inc., under the Solar America Initiative

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Analysis of Best Hydraulic Fracturing Practices in the Golden Trend Fields of Oklahoma Shahab D. Mohaghegh, West Virginia University  

E-Print Network [OSTI]

Analysis of Best Hydraulic Fracturing Practices in the Golden Trend Fields of Oklahoma Shahab D of optimized hydraulic fracturing procedure. Detail stimulation data from more than 230 wells in the Golden of hydraulic fractures. Therefore, it is highly recommended that the clastic and carbonate formations

Mohaghegh, Shahab

82

Issuance, Control and Use of Badges, Passes, and Credentials  

Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

The change provides clarification of badges and passes used for escorted visitors into DOE facilities. Chg 1, dated 12-19-88

1988-12-19T23:59:59.000Z

83

Issuance, Control and Use of Badges, Passes and Credentials  

Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

The order establishes and prescribes DOE policies and procedures for the issuance. control. and use of badges. passes, and credentials. Cancels DOE 5631.3.

1988-02-03T23:59:59.000Z

84

Passing good judgment, part 1: weapons designers with nuclear...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

2014 All Issues submit Passing good judgment, part 1: weapons designers with nuclear testing experience The nuclear weapons designers who developed their skills during...

85

Analysis of the Pass Cavallo shipwreck assemblage, Matagorda Bay, Texas  

E-Print Network [OSTI]

at Goliad. The vessel wrecked at the entrance of the historic Pass Cavallo while evading capture from a Mexican brig-of-war in November of 1835....

Borgens, Amy Anne

2004-09-30T23:59:59.000Z

86

aplicados ao passe: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Bretagne Computer Technologies and Information Sciences Websites Summary: 2zz 3z + 5 10 21 PASS Fdration de modles 12;Avancement 1 Problmes 2 Approche...

87

Ga nanoparticle-enhanced photoluminescence of GaAs  

SciTech Connect (OSTI)

We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States); Katzenstein, A. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Eckerd College, St. Petersburg, Florida 33711-4744 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

2013-09-02T23:59:59.000Z

88

The Single Pass Multi-component Harvester  

SciTech Connect (OSTI)

The authors are solely responsible for the content of this technical presentation. The technical presentation does not necessarily reflect the official position of the American Society of Agricultural Engineers (ASAE), and its printing and distribution does not constitute an endorsement of views which may be expressed. Technical presentations are not subject to the formal peer review process by ASAE editorial committees; therefore, they are not to be presented as refereed publications. Citation of this work should state that it is from an ASAE meeting paper. EXAMPLE: Author's Last Name, Initials. 2004. Title of Presentation. ASAE Paper No. 04xxxx. St. Joseph, Mich.: ASAE. For information about securing permission to reprint or reproduce a technical presentation, please contact ASAE at hq@asae.org or 269-429-0300 (2950 Niles Road, St. Joseph, MI 49085-9659 USA). Abstract. In order to meet the U. S. government’s goal of supplementing the energy available from petroleum by increasing the production of energy from renewable resources, increased production of bioenergy has become one of the new goals of the United States government and our society. U.S. Executive Orders and new Federal Legislation have mandated changes in government procedures and caused reorganizations within the government to support these goals. The Biomass Research and Development Initiative is a multi-agency effort to coordinate and accelerate all U.S. Federal biobased products and bioenergy research and development. The Initiative is managed by the National Biomass Coordination Office, which is staffed by both the DOE and the USDA. One of the most readily available sources of biomass from which to produce bioenergy is an agricultural crop residue, of which straw from small grains is the most feasible residue with which to start. For the straw residue to be used its collection must be energy efficient and its removal must not impact the sustainability of the growing environment. In addition, its collection must be economically advantageous to the producer. To do all that, a single pass multi-component harvester system is most desirable. Results from our first prototype suggest that current combines probably do adequate threshing and that a separate chassis can be developed that does additional separation and that is economically feasible.

Reed Hoskinson; John R. Hess

2004-08-01T23:59:59.000Z

89

AlGaN/GaN-based power semiconductor switches  

E-Print Network [OSTI]

AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

Lu, Bin, Ph. D. Massachusetts Institute of Technology

2013-01-01T23:59:59.000Z

90

Habitat use of Golden-Cheeked Warblers in Travis County, Texas  

E-Print Network [OSTI]

, and compared to vegetation in stands of warbler habitat. The breeding season was divided into two parts (March-April and May-June); the second part being characterized by the presence of young. Golden-cheeked Warblers switched from foraging in Plateau live oaks...

Beardmore, Carol Jeannette

1994-01-01T23:59:59.000Z

91

A review of "Dutch Culture in the Golden Age" by J. L. Price  

E-Print Network [OSTI]

that voice not simply to speak for these women who are so often elusive in historical sources, but also for the role of historian as voyeur (in the sense of observer) rather than judge. J. L. Price. Dutch Culture in the Golden Age. London: Reaktion Press...

Cruz, Laura

2012-01-01T23:59:59.000Z

92

BREEDING BIOLOGY OF THE GOLDEN-FACED TYRANNULET (ZIMMERIUS CHRYSOPS) IN VENEZUELA  

E-Print Network [OSTI]

BREEDING BIOLOGY OF THE GOLDEN-FACED TYRANNULET (ZIMMERIUS CHRYSOPS) IN VENEZUELA WILLIAM GOULDING1 Park, Venezuela during the 2002 to 2008 breeding seasons. The enclosed nest was similar to descriptions, it is broadly distributed with a range that extends from Peru, north through the Andes to Colombia and Venezuela

Martin, Thomas E.

93

Systemwide Risk Management and Public Safety 401 Golden Shore, 5th Floor  

E-Print Network [OSTI]

Systemwide Risk Management and Public Safety 401 Golden Shore, 5th Floor Long Beach, CA 90802 in this self-insured program. The Office of Risk Management in the Chancellor's Office administers the general liability, workers' compensation, property, and professional liability programs. The State Office of Risk

de Lijser, Peter

94

ABSTRACT. Single-pass welds and multi-ple-pass cladding of Fe-Al alloys were  

E-Print Network [OSTI]

ABSTRACT. Single-pass welds and multi- ple-pass cladding of Fe-Al alloys were deposited on carbon-temperature (600°C) sulfidation behavior of low-Al alloys (5­10 wt-% Al), which exhibited good weldabilty of dilution levels was achieved that resulted in fusion zone compositions with 3­30 wt-% Al. Under

DuPont, John N.

95

8/1/14 Google Maps https://www.google.com/maps/dir/Golden+Gate+Bridge,+San+Francisco,+CA+94129/UCSF%2FMission+Bay,+San+Francisco,+CA/@37.7996107,-122.4363906,... 1/2  

E-Print Network [OSTI]

8/1/14 Google Maps https://www.google.com/maps/dir/Golden+Gate+Bridge,+San+Francisco,+CA+94129/UCSF has tolls. Directions from Golden Gate Bridge to UCSF/Mission Bay San Francisco, CA 94129 Golden Gate;8/1/14 Google Maps https://www.google.com/maps/dir/Golden+Gate+Bridge,+San+Francisco,+CA+94129/UCSF%2FMission

Derisi, Joseph

96

ICRF heating of passing ions in TMX-U  

SciTech Connect (OSTI)

By placing ion-cyclotron resonant frequency (ICRF) antennas on both sides of a midplane gas-feed system in the central cell of the Tandem Mirror Experiment-Upgrade (TMX-U), our results have improved in the following areas: (a) The end losses out both ends show a factor of 3 to 4 increase in passing-ion temperatures and a factor of 2 to 3 decrease in passing-ion densities. (b) The passing-ion heating is consistent with Monte Carlo predictions. (c) The plasma density can be sustained by ICRF plus gas fueling as observed on other experiments.

Molvik, A.W.; Dimonte, G.; Barter, J.; Campbell, R.; Cummins, W.F.; Falabella, S.; Ferguson, S.W.; Poulsen, P.

1986-04-01T23:59:59.000Z

97

Development of By-Pass Blending Station System  

E-Print Network [OSTI]

A new building blending station system named by-pass blending station (BBS) has been developed to reduce building pump energy consumption in both district heating and cooling systems. Theoretical investigation demonstrated that the BBS can...

Liu, M.; Barnes, D.; Bunz, K.; Rosenberry, N.

2003-01-01T23:59:59.000Z

98

Porn, Pedagogy, and the Passing of an Icon  

E-Print Network [OSTI]

by A n n a E . Wa r d Porn, Pedagogy, and the Passing of anoverlaps with the field of porn studies and as a teacher,common within the field of porn studies itself. This is

Ward, Anna E.

2010-01-01T23:59:59.000Z

99

Direct Deposit When Message Passing meets Shared Thomas M. Stricker  

E-Print Network [OSTI]

Direct Deposit ­ When Message Passing meets Shared Memory Thomas M. Stricker May 19, 2000 CMU-CS-96 Copyright c by Thomas M. Stricker Supported in part by the Defense Advanced Research Projects Agency

100

Direct Deposit --When Message Passing meets Shared Thomas M. Stricker  

E-Print Network [OSTI]

Direct Deposit -- When Message Passing meets Shared Memory Thomas M. Stricker May 19, 2000 CMU Copyright c flby Thomas M. Stricker Supported in part by the Defense Advanced Research Projects Agency

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Consider Installing Turbulators on Two- and Three-Pass Firetube...  

Broader source: Energy.gov (indexed) [DOE]

tip sheet outlines the benefits of turbulators on firetube boilers as part of optimized steam systems. STEAM TIP SHEET 25 Consider Installing Turbulators on Two- and Three-Pass...

102

Best Management Practice #9: Single-Pass Cooling Equipment  

Broader source: Energy.gov [DOE]

Single-pass or once-through cooling systems provide an opportunity for significant water savings. In these systems, water is circulated once through a piece of equipment and is then disposed down the drain. Types of equipment that typically use single-pass cooling include CAT scanners, degreasers, hydraulic equipment, condensers, air compressors, welding machines, vacuum pumps, ice machines, x-ray equipment, and air conditioners.

103

EA-0995: Drum Storage Facility for Interim Storage of Materials Generated by Environmental Restoration Operations, Golden, Colorado  

Broader source: Energy.gov [DOE]

This EA evaluates the environmental impacts of the proposal to construct and operate a drum storage facility at the U.S. Department of Energy's Rocky Flats Environmental Technology Site in Golden,...

104

Curriculum development of a wildlife habitat gardening Golden Ray Series [sm] for the Junior Master Gardener [sm] Program  

E-Print Network [OSTI]

Development of the Backyard Buddies Golden Ray Series curriculum for the Junior Master Gardener Program is a labor-intensive and ongoing project requiring consideration of numerous factors relating not only to the habitat gardening subject matter...

Meche, Michelle S

2001-01-01T23:59:59.000Z

105

Bird Risk Behaviors and Fatalities at the Altamont Pass Wind Resource Area: Period of Performance, March 1998--December 2000  

SciTech Connect (OSTI)

It has been documented that wind turbine operations at the Altamont Pass Wind Resource Area kill large numbers of birds of multiple species, including raptors. We initiated a study that integrates research on bird behaviors, raptor prey availability, turbine design, inter-turbine distribution, landscape attributes, and range management practices to explain the variation in avian mortality at two levels of analysis: the turbine and the string of turbines. We found that inter-specific differences in intensities of use of airspace within close proximity did not explain the variation in mortality among species. Unique suites of attributes relate to mortality of each species, so species-specific analyses are required to understand the factors that underlie turbine-caused fatalities. We found that golden eagles are killed by turbines located in the canyons and that rock piles produced during preparation of the wind tower laydown areas related positively to eagle mortality, perhaps due to the use of these rock piles as cover by desert cottontails. Other similar relationships between fatalities and environmental factors are identified and discussed. The tasks remaining to complete the project are summarized.

Thelander, C. G.; Smallwood, K. S.; Rugge, L.

2003-12-01T23:59:59.000Z

106

An evaluation of the safety and utilization of short passing sections  

E-Print Network [OSTI]

AND RECO~NDATIONS Summary of Findings Conclusions Recommendations 45 46 46 REFERENCES VITA 50 vi LI ST OF TAB LE S Table Page l. Observed Pass Occurrences, 400-Foot Passing Section (Site P-4) 21 2. Observed Pass Occurrences, 640-Foot Passing... Section (Site P-5) 22 3. Observed Pass Occurrences, 880-Foot Passing Section (Site P-6) 23 4. Pass Acceptance Rates 25 5. Traffic Utilization of Short Passing Sections 30 LIST OF FIGURES Figure 1. Plan and Profile Views, 400-Foot Passing Section 2...

Jones, James Robert

1970-01-01T23:59:59.000Z

107

Agenda for VIIIth CMSN Meeting October 2-3 Golden Colorado  

E-Print Network [OSTI]

Agenda for VIIIth CMSN Meeting October 2-3 Golden Colorado September 29, 2003 1 #12;Thursday, Colorado School of Mines A. D. Rollett, Carnegie Mellon University 11:45 a.m. -12:00 p.m. Discussions -II thermodynamic integration Mark T. Lusk, Colorado School of Mines 10:45 - 11:00 a.m. Discussions - VI 11:00 - 11

Rollett, Anthony D.

108

Factors contributing to nest predation within habitat of the Golden-checked Warbler, Travis County, Texas  

E-Print Network [OSTI]

predation on this species. In April 1994 and 1995, I placed artificial nests, simulating those of Golden-cheeked Warblers, along 200 transects at 5 study sites in Travis County, Texas. This study was designed to determine if differential levels... on edge and interior transects by trial . . . . . . . . . . . . . . . . . . . . . 27 3. Kruskal-Wallis comparisons of predation on edge and interior transects by trial and study site 29 4. Nonparametric analysis of variance comparison of rates of nest...

Fink, Mark Lewis

1996-01-01T23:59:59.000Z

109

Investigation of the GaN-on-GaAs interface for vertical power device applications  

SciTech Connect (OSTI)

GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

2014-07-07T23:59:59.000Z

110

Composition and Interface Analysis of InGaN/GaN Multiquantum...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

111

Validation of the G-PASS code : status report.  

SciTech Connect (OSTI)

Validation is the process of determining whether the models in a computer code can describe the important phenomena in applications of interest. This report describes past work and proposed future work for validating the Gas Plant Analyzer and System Simulator (G-PASS) code. The G-PASS code was developed for simulating gas reactor and chemical plant system behavior during operational transients and upset events. Results are presented comparing code properties, individual component models, and integrated system behavior against results from four other computer codes. Also identified are two experiment facilities nearing completion that will provide additional data for individual component and integrated system model validation. The main goal of the validation exercise is to ready a version of G-PASS for use as a tool in evaluating vendor designs and providing guidance to vendors on design directions in nuclear-hydrogen applications.

Vilim, R. B.; Nuclear Engineering Division

2009-03-12T23:59:59.000Z

112

Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets  

SciTech Connect (OSTI)

We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

2013-08-19T23:59:59.000Z

113

ScreenPass: Secure Password Entry on Touchscreen Dongtao Liu  

E-Print Network [OSTI]

ScreenPass: Secure Password Entry on Touchscreen Devices Dongtao Liu Duke University Durham, NC, USA Eduardo Cuervo Duke University Durham, NC, USA Valentin Pistol Duke University Durham, NC, USA Ryan Scudellari Duke University Durham, NC, USA Landon P. Cox Duke University Durham, NC, USA ABSTRACT

Cox, Landon

114

Metro/Transit Pass Reimbursement Form Program Regulations  

E-Print Network [OSTI]

participate at least 70% of your scheduled workdays to meet program eligibility Eligible non-permit holders receive 100% reimbursement of the monthly Metro monthly pass cost (max $75) Eligible permit holders, WORK LOCATION, WORK HRS, PERMIT PURCHASE/TURNED IN) DAYS COMMUTED BY BUS REIMBURSEMENT REQUESTED (non-permit

de Lijser, Peter

115

Buffer Minimization in Pass Transistor Logic Advanced Technology Group  

E-Print Network [OSTI]

function cells and four inverters with various drive capabilities. The approach in [2] also utilizesBuffer Minimization in Pass Transistor Logic Hai Zhou Advanced Technology Group Synopsys, Inc are inverters, where phase assignment need to be done with buffer insertion. Exper­ iments are done on MCNC

Zhou, Hai

116

TULSA JEANS "SPIRIT" PASS Support the Campus Campaign by purchasing a  

E-Print Network [OSTI]

TULSA JEANS "SPIRIT" PASS Support the Campus Campaign by purchasing a "Spirit" Pass and receive purchasing a spirit pass. Yes! I want to be ALL IN and purchase a Jeans "Spirit" Pass in support of Campus_________________________________________________________ Campus Add/Bldg___________________________________________________ Office Phone Number

Oklahoma, University of

117

Doping Golden Buckyballs: Cu@Au16- and Cu@Au17- Cluster Anions. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed Newcatalyst phasesDataTranslocationDiurnal CycleDonald Raby Donald RabyDoping Golden

118

The Super Efficient Refrigerator Program: Case study of a Golden Carrot program  

SciTech Connect (OSTI)

The work in this report was conducted by the Analytic Studies Division (ASD) of the National Renewable Energy Laboratory (NREL) for the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy, Office of Building Technologies. This case study describes the development and implementation of the Super Efficient Refrigerator Program (SERP), which awarded $30 million to the refrigerator manufacturer that developed and commercialized a refrigerator that exceeded 1993 federal efficiency standards by at least 25%. The program was funded by 24 public and private utilities. As the first Golden Carrot program to be implemented in the United States, SERP was studied as an example for future `market-pull` efforts.

Eckert, J B

1995-07-01T23:59:59.000Z

119

Structural Transition of Gold Nanoclusters: From the Golden Cage to the  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administrationcontroller systemsBiSiteNeutronStrategicOur Mission Our Mission TheAnchoredGolden

120

CPV Cell Characterization Following One-Year Exposure in Golden, Colorado: Preprint  

SciTech Connect (OSTI)

A CPV module containing 30 III-V multijunction cells was operated on?sun for one year in Golden, Colorado. Each cell was characterized prior to and following exposure. A module power degradation of 10% was observed and found to be a result as an overall decrease in cell short circuit current and the presence of at least one shunted cell. A positive correlation between initial shunt current and an increase in shunt current following exposure was also found. Cell exfoliation was also observed and found to be coincident with the presence of water and/or charring of the cell package due to an off-sun event.

Bosco, N.; Kurtz, S.

2014-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

The effect of inter-pass temperature on residual stresses in multi-pass welds produced using a low transformation temperature filler alloy  

E-Print Network [OSTI]

, the deposition of new metal with a relatively low inter-pass temperature leads to increased residual stressesThe effect of inter-pass temperature on residual stresses in multi-pass welds produced using a low-to-martensite transformation temperatures offer an effective method of reducing residual stresses in strong, steel welds

Cambridge, University of

122

Some characteristics on nonbreaking waves passing a submerged longshore bar  

E-Print Network [OSTI]

, but, in the deeper water in the lee of the bar, a combination of linear wave forms results. AC KNOWLEDGEMENT This study was a product of the continuing research program in Coastal and Ocean Engineering at Texas A&M University. The author wishes... OF SCIENCE December 1971 Major Subject: Civil Engineering SOME CHARACTERISTICS OF NONBREAKING WAVES PASSING A SUBMERGED LONGSHORE BAR A Thesis by PIERCE LEON CHANDLER& JR. Approved as to style and content by: (C arrman of Committee) (Head...

Chandler, Pierce Leon

1971-01-01T23:59:59.000Z

123

Golden Hills  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFun with Big Sky LearningGet AssistanceCatalytic Sites . | EMSLAbout

124

Characterisation of Ga-coated and Ga-brazed aluminium  

SciTech Connect (OSTI)

This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

2012-05-15T23:59:59.000Z

125

Abigail Golden, Dept. of Ecology, Evolution and Environmental Biology Mentor: Dr. Joshua Drew, Dept. of Ecology, Evolution and Environmental Biology  

E-Print Network [OSTI]

Abigail Golden, Dept. of Ecology, Evolution and Environmental Biology Mentor: Dr. Joshua Drew, Dept. of Ecology, Evolution and Environmental Biology Advisor: Dr. Elisa Bone, Dept. of Ecology, Evolution their fishing practices, which species they targeted most heavily, and aspects of their traditional ecological

126

Environmental Health and Safety COLORADO SCHOOL OF MINES Colorado School of Mines GOLDEN, COLORADO 80401-1887  

E-Print Network [OSTI]

Environmental Health and Safety COLORADO SCHOOL OF MINES Colorado School of Mines GOLDEN, COLORADO AND REMEDIATION PROJECT - SOUTH SIDE OF CLEAR CREEK Dear Mr. Glueck: The Colorado School of Mines Research to the environmental project, the Colorado School of Mines has constructed road base improvements between Maple

127

Lowveld Tobacco Growers Association, Lowveld Golden Leaf Ltd, South Africa Evaluation of Tobacco Cultivars for Resistance to Races of Phytophthora  

E-Print Network [OSTI]

Lowveld Tobacco Growers Association, Lowveld Golden Leaf Ltd, South Africa Evaluation of Tobacco Cultivars for Resistance to Races of Phytophthora nicotianae in South Africa E. van Jaarsveld1 , M. J Association, PO Box 1158, Nelspruit, 1200, Republic of South Africa; 2 Tree Pathology Co-operative Program

128

MMR: A Platform for Large-Scale Forensic Computing Vassil Roussev, Liqiang Wang, Golden G. Richard III, Lodovico Marziale  

E-Print Network [OSTI]

ii MMR: A Platform for Large-Scale Forensic Computing Vassil Roussev, Liqiang Wang, Golden G-SCALE FORENSIC COMPUTING Middleware Support for MapReduce Processing Abstract The timely processing of large-scale digital forensic targets demands the empoyment of large-scale distributed resources, as well

Richard III, Golden G.

129

Testing a GaAs cathode in SRF gun  

SciTech Connect (OSTI)

RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating gradient of the RF guns, potentially offering a long lived cathode with very low emittance. Testing this concept requires preparation of the cathode, transportation to the SRF gun and evaluation of the performance of the cathode and the gun at cryogenic temperatures. In our work at BNL, we successfully activated the bulk GaAs in the preparation chamber. The highest quantum efficient was 10% at 532 nm that fell to 0.5% after 100 hours. We explored three different ways to activate the GaAs. We verified that the GaAs photocathode remains stable for 30 hours in a 10{sup -11} Torr vacuum. Passing the photocathode through the low 10{sup -9} Torr transfer section in several seconds caused the QE to drop to 0.8%. The photocathode with 0.8% QE can be tested for the SRF gun. The gun and beam pipe were prepared and assembled. After baking at 200 C baking, the vacuum of the gun and beam pipe can sustain a low 10{sup -11} Torr at room temperature. The final test to extract electrons from the gun is ongoing. In this paper, we discuss our progress with this SRF gun and the results of the photocathode in preparation chamber and in magnet transfer line.

Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

2011-03-28T23:59:59.000Z

130

EIS-0510: Calcasieu Pass Project, Cameron Parish, Louisiana  

Broader source: Energy.gov [DOE]

The Federal Energy Regulatory Commission (FERC) is preparing an EIS that analyzes the potential environmental impacts of the Calcasieu Pass Project, a proposed liquefied natural gas (LNG) export terminal in Cameron Parish, Louisiana. DOE is a cooperating agency in preparing the EIS. DOE, Office of Fossil Energy, has an obligation under Section 3 of the Natural Gas Act to authorize the import and export of natural gas, including LNG, unless it finds that the import or export is not consistent with the public interest.

131

ComPASS Present and Future Computing Requirements  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed New SubstationClean Communities ofCellulosic(SNfactory) |InnovationA P P E N DComPASS

132

Brandeis University Authorization for Payroll Deduction Purchase of MBTA Commuter Pass  

E-Print Network [OSTI]

Brandeis University Authorization for Payroll Deduction Purchase of MBTA Commuter Pass New Rates of the monthly MBTA pass indicated above from my paycheck on a post tax basis. I understand that Brandeis

Fraden, Seth

133

The Language Trap: U.S. Passing Fiction and its Paradox  

E-Print Network [OSTI]

Through exploration of William Faulkner's, James Weldon Johnson's and Nella Larsen's "passing novels," this dissertation points out that narrative representation of racial passing facilitates and compromises the authors' challenge to the white...

Sugimori, Masami

2009-12-04T23:59:59.000Z

134

Long-range triggered earthquakes that continue after the wave train passes  

E-Print Network [OSTI]

continue after the wave train passes, Geophys. Res. Lett. ,that continue after the wave train passes Emily E. Brodsky 1triggered early in the wave train. First, the sequences obey

Brodsky, Emily E.

2006-01-01T23:59:59.000Z

135

Quantifying the current and future impacts of the MBTA Corporate Pass Program ; Quantifying the current and future impacts of the Massachusetts Bay Transportation Authority Corporate Pass Program .  

E-Print Network [OSTI]

??Many city and regional transportation authorities, including the Massachusetts Bay Transportation Authority (MBTA) in Boston, offer a monthly pass to local employers which they can… (more)

Kamfonik, Dianne E

2013-01-01T23:59:59.000Z

136

Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)  

SciTech Connect (OSTI)

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

2012-12-15T23:59:59.000Z

137

GA Solar | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpen EnergyBoard" form. To create aGA SNC Solar Jump to:GA-Solar

138

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells  

E-Print Network [OSTI]

Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

Atwater, Harry

139

Native point defects in GaSb  

SciTech Connect (OSTI)

We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p- and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude. We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals.

Kujala, J.; Segercrantz, N.; Tuomisto, F.; Slotte, J. [Department of Applied Physics, Aalto University School of Science, P.O. Box 14100, FI-00076 AALTO (Finland)

2014-10-14T23:59:59.000Z

140

Supporting the Development of Resilient Message Passing Applications using Simulation  

SciTech Connect (OSTI)

An emerging aspect of high-performance computing (HPC) hardware/software co-design is investigating performance under failure. The work in this paper extends the Extreme-scale Simulator (xSim), which was designed for evaluating the performance of message passing interface (MPI) applications on future HPC architectures, with fault-tolerant MPI extensions proposed by the MPI Fault Tolerance Working Group. xSim permits running MPI applications with millions of concurrent MPI ranks, while observing application performance in a simulated extreme-scale system using a lightweight parallel discrete event simulation. The newly added features offer user-level failure mitigation (ULFM) extensions at the simulated MPI layer to support algorithm-based fault tolerance (ABFT). The presented solution permits investigating performance under failure and failure handling of ABFT solutions. The newly enhanced xSim is the very first performance tool that supports ULFM and ABFT.

Naughton, III, Thomas J [ORNL; Engelmann, Christian [ORNL] [ORNL; Vallee, Geoffroy R [ORNL] [ORNL; Boehm, Swen [ORNL] [ORNL

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

TThhee EEsssseennttiiaall JJoouurrnnaall ffoorr AAmmaatteeuurr AAssttrroonnoommeerrss AArroouunndd tthhee WWoorrlldd!! Summer 2011 Star Party Calendar * Shorts From Down Under * Astro Trivia * Deep Sky Treasures * Golden  

E-Print Network [OSTI]

tthhee WWoorrlldd!! Summer 2011 Star Party Calendar * Shorts From Down Under * Astro Trivia * Deep Sky Project * Building A Home Observatory * Sky Sketching * Cleaning Optics *Short Subjects *Star People Treasures * Golden State Star Party * Periodic Error * Laser Collimation * MSRAL * Stationary Eyepiece

Blaber, Michael

142

Proceedings of the 2002 U.S. DOE Hydrogen and Fuel Cells Annual Program/Lab R&D Review, May 6-10, 2002, Golden, Colorado.  

Broader source: Energy.gov [DOE]

Proceedings of the US DOE Hydrogen Program, the Fuel Cells for Transportation Program, and the Fuels for Fuel Cells Program inaugural combined Annual Program/Lab R&D Review held May 6-10, 2002 in Golden, Colorado.

143

New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems  

SciTech Connect (OSTI)

GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

2005-11-01T23:59:59.000Z

144

Beta decay of Ga-62  

E-Print Network [OSTI]

from the ex- perimental ft value for a 01?01 b decay between analog states with the relation @3# 0556-2813/2003/68~1!/015501~6!/$20.00 68 015501- of 62Ga . Hardy, V. E. Mayes, R. G. Neilson, M. Sanchez-Vega, and R. E. Tribble y, College Station...

Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

2003-01-01T23:59:59.000Z

145

Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability  

SciTech Connect (OSTI)

AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

2012-01-01T23:59:59.000Z

146

Chaos Pass Filter: Linear Response of Synchronized Chaotic Systems  

E-Print Network [OSTI]

The linear response of synchronized time-delayed chaotic systems to small external perturbations, i.e., the phenomenon of chaos pass filter, is investigated for iterated maps. The distribution of distances, i.e., the deviations between two synchronized chaotic units due to external perturbations on the transfered signal, is used as a measure of the linear response. It is calculated numerically and, for some special cases, analytically. Depending on the model parameters this distribution has power law tails in the region of synchronization leading to diverging moments of distances. This is a consequence of multiplicative and additive noise in the corresponding linear equations due to chaos and external perturbations. The linear response can also be quantified by the bit error rate of a transmitted binary message which perturbs the synchronized system. The bit error rate is given by an integral over the distribution of distances and is calculated analytically and numerically. It displays a complex nonmonotonic behavior in the region of synchronization. For special cases the distribution of distances has a fractal structure leading to a devil's staircase for the bit error rate as a function of coupling strength. The response to small harmonic perturbations shows resonances related to coupling and feedback delay times. A bi-directionally coupled chain of three units can completely filtered out the perturbation. Thus the second moment and the bit error rate become zero.

Steffen Zeeb; Johannes Kestler; Ido Kanter; Wolfgang Kinzel

2013-01-29T23:59:59.000Z

147

Message passing with a limited number of DMA byte counters  

DOE Patents [OSTI]

A method for passing messages in a parallel computer system constructed as a plurality of compute nodes interconnected as a network where each compute node includes a DMA engine but includes only a limited number of byte counters for tracking a number of bytes that are sent or received by the DMA engine, where the byte counters may be used in shared counter or exclusive counter modes of operation. The method includes using rendezvous protocol, a source compute node deterministically sending a request to send (RTS) message with a single RTS descriptor using an exclusive injection counter to track both the RTS message and message data to be sent in association with the RTS message, to a destination compute node such that the RTS descriptor indicates to the destination compute node that the message data will be adaptively routed to the destination node. Using one DMA FIFO at the source compute node, the RTS descriptors are maintained for rendezvous messages destined for the destination compute node to ensure proper message data ordering thereat. Using a reception counter at a DMA engine, the destination compute node tracks reception of the RTS and associated message data and sends a clear to send (CTS) message to the source node in a rendezvous protocol form of a remote get to accept the RTS message and message data and processing the remote get (CTS) by the source compute node DMA engine to provide the message data to be sent.

Blocksome, Michael (Rochester, MN); Chen, Dong (Croton on Hudson, NY); Giampapa, Mark E. (Irvington, NY); Heidelberger, Philip (Cortlandt Manor, NY); Kumar, Sameer (White Plains, NY); Parker, Jeffrey J. (Rochester, MN)

2011-10-04T23:59:59.000Z

148

InGaAsN/GaAs heterojunction for multi-junction solar cells  

DOE Patents [OSTI]

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

2001-01-01T23:59:59.000Z

149

Exponential Decay and Fermi's Golden Rule from an Uncontrolled Quantum Zeno Effect  

E-Print Network [OSTI]

We modify the theory of the Quantum Zeno Effect to make it consistent with the postulates of quantum mechanics. This modification allows one, throughout a sequence of observations of an excited system, to address the nature of the observable and thereby to distinguish survival from non-decay, which is necessary whenever excited states are degenerate. As a consequence, one can determine which types of measurements can possibly inhibit the exponential decay of the system. We find that continuous monitoring taken as the limit of a sequence of ideal measurements will only inhibit decay in special cases, such as in well-controlled experiments. Uncontrolled monitoring of an unstable system, however, can cause exponentially decreasing non-decay probability at all times. Furthermore, calculating the decay rate for a general sequence of observations leads to a straightforward derivation of Fermi's Golden Rule, that avoids many of the conceptual difficulties normally encountered. When multiple decay channels are available, the derivation reveals how the total decay rate naturally partitions into a sum of the decay rates for the various channels, in agreement with observations. Continuous and unavoidable monitoring of an excited system by an uncontrolled environment may therefore be a mechanism by which to explain the exponential decay law.

P. W. Bryant

2014-10-14T23:59:59.000Z

150

Prediction of pressure depletion from wireline and mud logs, Golden Trend field, Garvin County, Oklahoma  

SciTech Connect (OSTI)

The Golden Trend, a giant oil field encompassing several overlapping Pennsylvanian stratigraphic traps on the eastern flank of the Anadarko basin, has undergone a resurgence in the 1980s with deeper drilling for pre-Pennsylvanian targets. Approximately 200 new wells in and near the Antioch Southwest, Panther Creek, and Elmore Northeast waterflood units (T2, 3N, R2, 3W) have encountered evidence of undrained reserves in both established and new pay intervals of Pennsylvanian Hart and Gibson sandstones. Although all porous Hart and Gibson sandstones in the study area were originally oil bearing, evaluation of the state of depletion is necessary for planning future recompletions to these reservoirs. In general, wireline and mud logs over intervals with known production histories exhibit characteristics suggestive of pressure depletion, even in areas of old waterfloods. The most consistent parameters correlating to low reservoir pressure are lost circulation, lack of an increase in penetration rate when drilling porous sandstone, excessive gas effect on neutron-density logs, and low methane and total gas levels on the mud logs. The resistivity invasion profile also reflects lower pressure, but is subtle. The SP curve and gas composition on the mud log do not vary substantially as a function of pressure. Visual sample shows are slightly weaker in depleted sandstones, but are less reliable, owing to dependence on reservoir quality and variations between geologists on oral descriptions of show quality.

Sorenson, R.P.; White, F.W.; Struckel, J.C.

1987-08-01T23:59:59.000Z

151

Forty-Four Pass Fibre Optic Loop for Improving the Sensitivity of Surface Plasmon Resonance Sensors  

E-Print Network [OSTI]

A forty-four pass fibre optic surface plasmon resonance sensor that enhances detection sensitivity according to the number of passes is demonstrated for the first time. The technique employs a fibre optic recirculation loop that passes the detection spot forty- four times, thus enhancing sensitivity by a factor of forty-four. Presently, the total number of passes is limited by the onset of lasing action of the recirculation loop. This technique offers a significant sensitivity improvement for various types of plasmon resonance sensors that may be used in chemical and biomolecule detections.

Chin B Su; Jun Kameoka

2007-09-21T23:59:59.000Z

152

E-Print Network 3.0 - altamont pass wind Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

2 UNDERSTANDING THE PROBLEM 1.1 INTRODUCTION Summary: consistently documented that wind turbines in the Altamont Pass Wind Resource Area (APWRA) kill large numbers... et al....

153

Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells  

SciTech Connect (OSTI)

The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2007-02-01T23:59:59.000Z

154

Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs  

E-Print Network [OSTI]

AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

Gao, Feng, Ph. D. Massachusetts Institute of Technology

2014-01-01T23:59:59.000Z

155

InGaAsInP double heterostructures on InPSi templates fabricated by wafer bonding and hydrogen-induced exfoliation  

E-Print Network [OSTI]

. Wanlass National Renewable Energy Laboratory, Golden, Colorado 80401 Received 23 January 2003; accepted 3

Atwater, Harry

156

Siemens Pittsburgh, PA Novelis Corporation Atlanta, GA  

E-Print Network [OSTI]

Industrial Design ­ Shanghai, China Eaton Corporation ­ Pittsburgh, PA CMU, CTTEC ­ PittsburghSiemens ­ Pittsburgh, PA Novelis Corporation ­ Atlanta, GA Expense

McGaughey, Alan

157

Sitewide Environmental Assessment for the National Renewable Energy Laboratory, Golden, Colorado  

SciTech Connect (OSTI)

The Solar Energy Research, Development, and Demonstration Act of 1974 authorized a federal program to develop solar energy as a viable source of the nation`s future energy needs. Under this authority, the National Renewable Energy Laboratory (NREL) was created as a laboratory of the Department of Energy (DOE) to research a number of renewable energy possibilities. The laboratory conducts its operations both in government-owned facilities on the NREL South Table Mountain (STM) Site near Golden, Colorado, and in a number of leased facilities, particularly the Denver West Office Park. NREL operations include research in energy technologies, and other areas of national environmental and energy technology interest. Examples of these technologies include electricity from sunlight with solar cells (photovoltaics); energy from wind (windmills or wind turbines); conversion of plants and plant products (biomass) into liquid fuels (ethanol and methanol); heat from the sun (solar thermal) in place of wood, oil, gas, coal and other forms of heating; and solar buildings. NREL proposes to continue and expand the present R&D efforts in C&R energy by making infrastructure improvements and constructing facilities to eventually consolidate the R&D and associated support activities at its STM Site. In addition, it is proposed that operations continue in current leased space at the present levels of activity until site development is complete. The construction schedule proposed is designed to develop the site as rapidly as possible, dependent on Congressional funding, to accommodate not only the existing R&D that is being conducted in leased facilities off-site but to also allow for the 20-year projected growth. Impacts from operations currently conducted off-site are quantified and added to the cumulative impacts of the STM site. This environmental assessment provides information to determine the severity of impacts on the environment from the proposed action.

Not Available

1993-05-04T23:59:59.000Z

158

Spontaneous emission in GaN/InGaN photonic crystal nanopillars  

E-Print Network [OSTI]

. Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

Boyer, Edmond

159

Modelling of the bead formation during multi pass hybrid laser/gas metal arc welding  

E-Print Network [OSTI]

- 1 - Modelling of the bead formation during multi pass hybrid laser/gas metal arc welding Olivier dimensional finite element model has been developed to simulate weld bead formation in multi pass hybrid laser/gas metal arc welding. The model considers both a gas metal arc welding (GMAW) electrode and a laser beam

Paris-Sud XI, Université de

160

RESIDUAL STRESS DISTRIBUTIONS FOR MULTI-PASS WELDS IN PRESSURE VESSEL AND PIPING COMPONENTS  

E-Print Network [OSTI]

RESIDUAL STRESS DISTRIBUTIONS FOR MULTI-PASS WELDS IN PRESSURE VESSEL AND PIPING COMPONENTS distributions in common pressure vessel and piping components is generated by using the multi-pass finite-walled pipes with various radius to thickness ratios. Both single- and double-V weld joints are investigated

Michaleris, Panagiotis

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Asymmetric and nonlinear pass-through of crude oil prices to gasoline and natural gas prices  

E-Print Network [OSTI]

Asymmetric and nonlinear pass-through of crude oil prices to gasoline and natural gas prices Ahmed distributed lags (NARDL) mod- el to examine the pass-through of crude oil prices into gasoline and natural gas the possibility to quantify the respective responses of gasoline and natural gas prices to positive and negative

Paris-Sud XI, Université de

162

Pricing Electricity for Default Customers: Pass Through or Performance-Based Rates?  

E-Print Network [OSTI]

PWP-066 Pricing Electricity for Default Customers: Pass Through or Performance-Based Rates? Carl;1 Pricing Electricity for Default Customers: Pass Through or Performance-Based Rates? Carl Blumstein1 August 1999 Abstract California electricity consumers can choose a retail electricity service provider

California at Berkeley. University of

163

GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators  

SciTech Connect (OSTI)

We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

2005-08-01T23:59:59.000Z

164

FUPWG Meeting Agenda - Atlanta, GA | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA Energy on My Mind FUPWG Atlanta, GA May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta,...

165

The Golden Gate Textile Barrier: Preserving California Bay of San Francisco from a Rising North Pacific Ocean  

E-Print Network [OSTI]

Climate change in California may require construction of a barrier separating the Pacific Ocean from San Francisco Bay and the Sacramento River-San Joaquin River Delta simply because Southern California is remarkably dependent on freshwater exported from the Delta. We offer a new kind of salt barrier, a macroproject built of impermeable textile materials stretched across the Golden Gate beneath the famous bridge. We anticipate it might eventually substitute for a recently proposed San Francisco In-Stream Tidal Power Plant harnessing a 1.7 m tide at the Bay entrance if future climate conditions Statewide is conducive. First-glance physics underpin our macroproject.

Richart B. Cathcart; Alexander A. Bolonkin

2007-02-04T23:59:59.000Z

166

The Golden Gate Textile Barrier: Preserving California Bay of San Francisco from a Rising North Pacific Ocean  

E-Print Network [OSTI]

Climate change in California may require construction of a barrier separating the Pacific Ocean from San Francisco Bay and the Sacramento River-San Joaquin River Delta simply because Southern California is remarkably dependent on freshwater exported from the Delta. We offer a new kind of salt barrier, a macroproject built of impermeable textile materials stretched across the Golden Gate beneath the famous bridge. We anticipate it might eventually substitute for a recently proposed San Francisco In-Stream Tidal Power Plant harnessing a 1.7 m tide at the Bay entrance if future climate conditions Statewide is conducive. First-glance physics underpin our macroproject.

Cathcart, R B; Bolonkin, Alexander A.; Cathcart, Richart B.

2007-01-01T23:59:59.000Z

167

Various Carbon to Carbon Bond Lengths Inter-related via the Golden Ratio, and their Linear Dependence on Bond Energies  

E-Print Network [OSTI]

This work presents the relations between the carbon to carbon bond lengths in the single, double and triple bonds and in graphite, butadiene and benzene. The Golden ratio, which was shown to divide the Bohr radius into two parts pertaining to the charged particles, the electron and proton, and to divide inter-atomic distances into their cationic and anionic radii, also plays a role in the carbon-carbon bonds and in the ionic/polar character of those in graphite, butadiene and benzene. Further, the bond energies of the various CC bonds are shown to vary linearly with the bond lengths.

Raji Heyrovska

2008-09-11T23:59:59.000Z

168

TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer  

SciTech Connect (OSTI)

It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

2008-01-01T23:59:59.000Z

169

Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators  

E-Print Network [OSTI]

focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

Demir, Hilmi Volkan

170

HOT TOPICS: Bridge suicides (http://www.marinij.com/goldengatebridge/ci_25220172/record-number-golden-gate-bridge-suicides-recorded-2013) #MarinDrought (http://www.marinij.com/marinnews/ci_24975029/readers-share-water-saving-ideas-marindroughtt)  

E-Print Network [OSTI]

HOT TOPICS: Bridge suicides (http://www.marinij.com/goldengatebridge/ci_25220172/record-number-golden-gate-bridge://www.marinij.com/goldengatebridge/ci_25217201/golden-gate-bridge-toll-could-increase-by-1) Data center (http://www.marinij.com/data) Traffic://www.marinij.com/marinnews/ci_25202779/marin-robbery-suspect-loses-bid-stop-ij-from) Bridge toll hike (http

California at Berkeley, University of

171

First results of electron temperature measurements by the use of multi-pass Thomson scattering system in GAMMA 10  

SciTech Connect (OSTI)

A multi-pass Thomson scattering (TS) has the advantage of enhancing scattered signals. We constructed a multi-pass TS system for a polarisation-based system and an image relaying system modelled on the GAMMA 10 TS system. We undertook Raman scattering experiments both for the multi-pass setting and for checking the optical components. Moreover, we applied the system to the electron temperature measurements in the GAMMA 10 plasma for the first time. The integrated scattering signal was magnified by approximately three times by using the multi-pass TS system with four passes. The electron temperature measurement accuracy is improved by using this multi-pass system.

Yoshikawa, M., E-mail: yosikawa@prc.tsukuba.ac.jp; Nagasu, K.; Shimamura, Y.; Shima, Y.; Kohagura, J.; Sakamoto, M.; Nakashima, Y.; Imai, T.; Ichimura, M. [Plasma Research Center, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan); Yasuhara, R.; Yamada, I.; Funaba, H.; Kawahata, K. [National Institute for Fusion Science, 322-6 Oroshi-cho, Toki, Gifu 509-5292 (Japan); Minami, T. [Institute of Advanced Energy, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan)

2014-11-15T23:59:59.000Z

172

Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

2011-01-07T23:59:59.000Z

173

Survival Rates of Juvenile Salmonids Passing Through the Bonneville Dam and Spillway in 2008  

SciTech Connect (OSTI)

This report describes a 2008 acoustic telemetry survival study conducted by the Pacific Northwest National Laboratory for the Portland District of the U.S. Army Corps of Engineers. The study estimated the survival of juvenile Chinook salmon and steelhead passing Bonneville Dam (BON) and its spillway. Of particular interest was the relative survival of smolts detected passing through end spill bays 1-3 and 16-18, which had deep flow deflectors immediately downstream of spill gates, versus survival of smolts passing middle spill bays 4-15, which had shallow flow deflectors.

Ploskey, Gene R.; Weiland, Mark A.; Faber, Derrek M.; Deng, Zhiqun; Johnson, Gary E.; Hughes, James S.; Zimmerman, Shon A.; Monter, Tyrell J.; Cushing, Aaron W.; Wilberding, Matthew C.; Durham, Robin E.; Townsend, R. L.; Skalski, J. R.; Buchanan, Rebecca A.; Kim, Jina; Fischer, Eric S.; Meyer, Matthew M.; McComas, Roy L.; Everett, Jason

2009-12-28T23:59:59.000Z

174

Passing particle toroidal precession induced by electric field in a tokamak  

SciTech Connect (OSTI)

Characteristics of a rotation of passing particles in a tokamak with radial electric field are calculated. The expression for time-averaged toroidal velocity of the passing particle induced by the electric field is derived. The electric-field-induced additive to the toroidal velocity of the passing particle appears to be much smaller than the velocity of the electric drift calculated for the poloidal magnetic field typical for the trapped particle. This quantity can even have the different sign depending on the azimuthal position of the particle starting point. The unified approach for the calculation of the bounce period and of the time-averaged toroidal velocity of both trapped and passing particles in the whole volume of plasma column is presented. The results are obtained analytically and are confirmed by 3D numerical calculations of the trajectories of charged particles.

Andreev, V. V. [Peoples' Friendship University of Russia, Ordzhonikidze St. 3, Moscow 117198 (Russian Federation)] [Peoples' Friendship University of Russia, Ordzhonikidze St. 3, Moscow 117198 (Russian Federation); Ilgisonis, V. I.; Sorokina, E. A. [Peoples' Friendship University of Russia, Ordzhonikidze St. 3, Moscow 117198 (Russian Federation) [Peoples' Friendship University of Russia, Ordzhonikidze St. 3, Moscow 117198 (Russian Federation); NRC “Kurchatov Institute”, Kurchatov Sq. 1, Moscow 123182 (Russian Federation)

2013-12-15T23:59:59.000Z

175

Do geochemical estimates of sediment focusing pass the sediment test in the equatorial Pacific?  

E-Print Network [OSTI]

Do geochemical estimates of sediment focusing pass the sediment test in the equatorial Pacific] The paleoceanographic recording fidelity of pelagic sediments is limited by chemical diagenesis and physical mixing (bioturbation and horizontal sediment transport). Diagenesis and bioturbation are relatively well

Kurapov, Alexander

176

Quantifying the current and future impacts of the MBTA Corporate Pass Program  

E-Print Network [OSTI]

Many city and regional transportation authorities, including the Massachusetts Bay Transportation Authority (MBTA) in Boston, offer a monthly pass to local employers which they can distribute to their employees. There are ...

Kamfonik, Dianne E

2013-01-01T23:59:59.000Z

177

SEMI-ANNUAL REPORTS FOR SABINE PASS LIQUEFACTION, LLC - FE DKT...  

Broader source: Energy.gov (indexed) [DOE]

111-LNG - ORDER 2961 & 2961-A SEMI-ANNUAL REPORTS FOR SABINE PASS LIQUEFACTION, LLC - FE DKT. NO. 10-111-LNG - ORDER 2961 & 2961-A April 2011 October 2011 April 2012 October 2012...

178

SEMI-ANNUAL REPORTS FOR SABINE PASS LIQUEFACTION, LLC - FE DKT...  

Broader source: Energy.gov (indexed) [DOE]

85-LNG - ORDER 2833 SEMI-ANNUAL REPORTS FOR SABINE PASS LIQUEFACTION, LLC - FE DKT. NO. 10-85-LNG - ORDER 2833 April 2011 October 2011 April 2012 October 2012 April 2013 October...

179

Venture Global Calcasieu Pass, LLC- FE Dkt. No.- 15-25-LNG  

Broader source: Energy.gov [DOE]

The Office of Fossil Energy gives notice of receipt of an Application filed February 9, 2015, by Venture Global Calcasieu Pass, LLC (Venture Global), seeking a long-term multi-contract...

180

Regulation for Underground Storage of CO2 Passed by U.S. States  

E-Print Network [OSTI]

generation. Its use, therefore, is necessary in order to achieve the CO2 emission reduction targetRegulation for Underground Storage of CO2 Passed by U.S. States Holly Javedan Massachusetts................................................................................................... 8 2.4 CO2 Ownership

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

The effects of chemical thinning on the alternate bearing of "Golden Delicious" apples in southwestern N. Leon, Mexico  

E-Print Network [OSTI]

, Marino and Greene (45) reported for 'Early McIntosh' (cultivar with an extreme biennial tendency) that fruit bearing spurs contained more GA activity than vegetative spurs. Gibberellin activity in diffusates of fruits increased from full bloom to abou... the involvement of endogenous gibberellins as inhibitors of flower induction and the effect can be reproduced by the exogenous application of this hormone (41) ~ By applying different GA's, Marino and Greene (45) observed that gibberellins A4+& were more...

Yanez Reyes, Jesus Noel

1984-01-01T23:59:59.000Z

182

Ohmic contacts to n-GaSb  

E-Print Network [OSTI]

in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

Yang, Zhengchong

2012-06-07T23:59:59.000Z

183

Experimental Demonstration of End-to-End Message Passing for HPC systems through a Hybrid Optical Switch  

E-Print Network [OSTI]

optical switch and FPGAs emulating a High Performance Computing system. The experiment-driven simulation-latency message passing is critical to High Performance Computing (HPC) systems. The Message Passing Interface

Kolner, Brian H.

184

Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures  

SciTech Connect (OSTI)

In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

2014-01-13T23:59:59.000Z

185

Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire  

SciTech Connect (OSTI)

We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2014-09-08T23:59:59.000Z

186

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures  

SciTech Connect (OSTI)

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

2014-04-24T23:59:59.000Z

187

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells  

SciTech Connect (OSTI)

Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

2014-04-28T23:59:59.000Z

188

702 IEEEJOURNAL OF QUAKTUM ELECTRONICS OCTOBER phases of the q pump modes. asis the single pass power loss of the  

E-Print Network [OSTI]

power loss of the signal modes, and allidler modes are assumed to have the same single pass loss ai. K

Teich, Malvin C.

189

Progress report for the commercialization of a one pass cotton plowdown. Technical progress report, April--June 1996  

SciTech Connect (OSTI)

Progress is described on the design, performance, and commercialization of a one pass cotton plowdown machine. Photos are included.

NONE

1996-07-28T23:59:59.000Z

190

A Review of "Humanism in an Age of Science: The Amsterdam Athenaeum in the Golden Age, 1632-1704" by Dirk van Miert  

E-Print Network [OSTI]

reviews 225 Dirk van Miert. Humanism in an Age of Science: The Amsterdam Athenaeum in the Golden Age, 1632-1704. Leiden and Boston: Brill, 2009. xiv + 433 pp. + 11 illus. + 3 appendices. $147.00. Review by joseph m. mccarthy, suffolk...

McCarthy, Joseph M.

2010-01-01T23:59:59.000Z

191

Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT  

SciTech Connect (OSTI)

The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

2014-04-24T23:59:59.000Z

192

Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface  

E-Print Network [OSTI]

in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

Katsumoto, Shingo

193

InAsGaPInGaP high-temperature power Schottky rectifier and J. M. Woodall  

E-Print Network [OSTI]

°C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion is thought to be due to strong covalent bonding at the InAs/GaP interface. The InAs/GaP heterointerface effectively blocks impurity diffusion. Since InGaP is superior to GaP for high-power applica- tions, as shown

Woodall, Jerry M.

194

Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting  

E-Print Network [OSTI]

of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

Wetzel, Christian M.

195

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

196

Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires  

SciTech Connect (OSTI)

The near-surface reduction of the Sb mole fraction during the growth of GaAsSb nanowires (NWs) and GaAs NWs with GaAsSb inserts has been studied using quantitative high-angle annular dark field scanning transmission electron microscopy (STEM). A model for diffusion of Sb in the hexagonal NWs was developed and employed in combination with the quantitative STEM analysis. GaAsSb NWs grown by Ga-assisted molecular beam epitaxy (MBE) and GaAs/GaAsSb NWs grown by Ga- and Au-assisted MBE were investigated. At the high temperatures employed in the NW growth, As-Sb exchange at and outward diffusion of Sb towards the surface take place, resulting in reduction of the Sb concentration at and near the surface in the GaAsSb NWs and the GaAsSb inserts. In GaAsSb NWs, an increasing near-surface depletion of Sb was observed towards the bottom of the NW due to longer exposure to the As beam flux. In GaAsSb inserts, an increasing change in the Sb concentration profile was observed with increasing post-insert axial GaAs growth time, resulting from a combined effect of radial GaAs overgrowth and diffusion of Sb. The effect of growth temperature on the diffusion of Sb in the GaAsSb inserts was identified. The consequences of these findings for growth optimization and the optoelectronic properties of GaAsSb are discussed.

Kauko, H.; Helvoort, A. T. J. van, E-mail: a.helvoort@ntnu.no [Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim (Norway); Fimland, B. O.; Munshi, A. M. [Department of Electronics and Telecommunications, NTNU, Trondheim (Norway); Grieb, T.; Müller, K.; Rosenauer, A. [Institut für Festkörperphysik, Universität Bremen, Bremen (Germany)

2014-10-14T23:59:59.000Z

197

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template  

SciTech Connect (OSTI)

We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110 nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

Wang, Y.D.; Zang, K.Y.; Chua, S.J.; Tripathy, S.; Chen, P.; Fonstad, C.G. [Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2005-12-19T23:59:59.000Z

198

REGULAR PAPER Improvement of Surge Protection by Using an AlGaN/GaN-Based  

E-Print Network [OSTI]

the metal oxide varistor (MOV) and resistor (R) in a state-of-the-art surge protection circuit), metal oxide varistor (MOV), and transient voltage suppressor (TVS) diodes are the state-of-the- artREGULAR PAPER Improvement of Surge Protection by Using an AlGaN/GaN-Based Metal­Semiconductor­Metal

Chow, Lee

199

Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices  

SciTech Connect (OSTI)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

1997-05-01T23:59:59.000Z

200

Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets  

SciTech Connect (OSTI)

We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(×2.1±1) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

2014-09-21T23:59:59.000Z

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Study and development of tunable, single mode AlGaAs/GaAs lasers  

SciTech Connect (OSTI)

Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

1990-09-01T23:59:59.000Z

202

Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)  

SciTech Connect (OSTI)

GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

2013-12-02T23:59:59.000Z

203

Quantum confinement in GaP nanoclusters  

SciTech Connect (OSTI)

We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.

Laurich, B.K.; Smith, D.C.; Healy, M.D.

1994-06-01T23:59:59.000Z

204

Survival of Juvenile Chinook Salmon Passing the Bonneville Dam Spillway in 2007  

SciTech Connect (OSTI)

The U.S. Army Corps of Engineers Portland District (CENWP) funds numerous evaluations of fish passage and survival on the Columbia River. In 2007, the CENWP asked Pacific Northwest National Laboratory to conduct an acoustic telemetry study to estimate the survival of juvenile Chinook salmon passing the spillway at Bonneville Dam. This report documents the study results which are intended to be used to improve the conditions juvenile anadromous fish experience when passing through the dams that the Corps operates on the river.

Ploskey, Gene R.; Weiland, Mark A.; Hughes, James S.; Zimmerman, Shon A.; Durham, Robin E.; Fischer, Eric S.; Kim, Jina; Townsend, R. L.; Skalski, J. R.; Buchanan, Rebecca A.; McComas, Roy L.

2008-12-01T23:59:59.000Z

205

Tidal hydraulics of San Luis Pass, Texas: a field and numerical investigation  

E-Print Network [OSTI]

TIDAL HYDPAULICS OF SAN LUIS PASS, TEXAS: A FIELD AND VBKRICAL INSTIGATION A Thesis by SCOTT JEROME MORTON Submitted to the Graduate College of Texas A(II University in partial fulfillment of the requirement for the degree of MASTER... OF SCIENCE August 1980 i&Iajor Subject: Ocean Engineering TIDAL HyDRAULICS OF SAN LUIS PASS, TEXAS: A FIELD AND M&IERICAL INVESTIGATION A Thesis by SCOTI' JEROIIE MORTON Approved as to style and content by: (C?airman of Committee) (Member) /member...

Morton, Scott Jerome

1980-01-01T23:59:59.000Z

206

Muley Pass  

E-Print Network [OSTI]

forced anxiety. A pair of boots walk past them, making thewood bend and squeal. The boots’ spurs jingle. On mainand the gunfight is on. The boots stop. Standing in them is

Conkey, Ross

2013-01-01T23:59:59.000Z

207

Hybrid: Passing  

Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative Fuels Data Center HomeNew YorkLouisiana Laws andDakota1 Cleanbuttonbutton highlighted

208

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

209

Defect studies in low-temperature-grown GaAs  

SciTech Connect (OSTI)

High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

Bliss, D.E.

1992-11-01T23:59:59.000Z

210

Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers  

SciTech Connect (OSTI)

Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

2013-05-28T23:59:59.000Z

211

Bottlenose dolphins of San Luis Pass, Texas: occurrencs patterns, site fidelity, and habitat use  

E-Print Network [OSTI]

Boat-based photo-identification surveys were conducted during a 12-month (1995-96) study of bottlenose dolphins, Tursiops truncatus, in San Luis Pass/Chocolate Bay, Texas, a relatively undisturbed area located at the southwestern end of Galveston...

Maze, Katherine Suzanne

1997-01-01T23:59:59.000Z

212

Mobile Agents for Pervasive Computing Using a Novel Method of Message Passing  

E-Print Network [OSTI]

Mobile Agents for Pervasive Computing Using a Novel Method of Message Passing David Levine, Renjith devices throughout an individual's working and living environment. Mobile agents are software entities that can migrate between servers or mobile agent environments of the network accomplishing various tasks

Záruba, Gergely

213

Multiple pass and multiple layer friction stir welding and material enhancement processes  

DOE Patents [OSTI]

Processes for friction stir welding, typically for comparatively thick plate materials using multiple passes and multiple layers of a friction stir welding tool. In some embodiments a first portion of a fabrication preform and a second portion of the fabrication preform are placed adjacent to each other to form a joint, and there may be a groove adjacent the joint. The joint is welded and then, where a groove exists, a filler may be disposed in the groove, and the seams between the filler and the first and second portions of the fabrication preform may be friction stir welded. In some embodiments two portions of a fabrication preform are abutted to form a joint, where the joint may, for example, be a lap joint, a bevel joint or a butt joint. In some embodiments a plurality of passes of a friction stir welding tool may be used, with some passes welding from one side of a fabrication preform and other passes welding from the other side of the fabrication preform.

Feng, Zhili (Knoxville, TN) [Knoxville, TN; David, Stan A. (Knoxville, TN) [Knoxville, TN; Frederick, David Alan (Harriman, TN) [Harriman, TN

2010-07-27T23:59:59.000Z

214

On-Line Measurement and Tuning of Multi-Pass Recirculation Time in the CEBAF Linacs  

E-Print Network [OSTI]

On-Line Measurement and Tuning of Multi-Pass Recirculation Time in the CEBAF Linacs Michael, USA Abstract CEBAF is a CW, recirculating electron accelerator, us- ing on-crest RF acceleration the beam to drift off-crest with respect to the accelerating fields. Figure 1: Layout of CEBAF Accelerator

215

One-pass Data Mining Algorithms in a DBMS with UDFs Carlos Ordonez  

E-Print Network [OSTI]

One-pass Data Mining Algorithms in a DBMS with UDFs Carlos Ordonez University of Houston Houston outside a DBMS, mostly on flat files. In contrast, we present a data mining system that can work on top of a relational DBMS based on a combination of SQL queries and User-Defined Functions (UDFs), debuking the common

Ordonez, Carlos

216

Decision-aids for enhancing intergovernmental interactions: The Pre-notification Analysis Support System (PASS)  

SciTech Connect (OSTI)

The Department of Energy (DOE) plans to honor its commitment to government-to-government interactions by providing advance notice of DOE spent fuel and high-level waste shipments to Indian tribes whose jurisdictions are crossed by or adjacent to transportation routes. The tribes are important contributors to a regional response network, and providing tribes with advance notice of DOE shipping plans marks the start -- not the end -- of direct, government-to-government interactions with DOE. The Tribal Prenotification Analysis Support System (PASS) is being developed for the Office of Special Programs within the Department`s Office of Environmental Restoration and Waste Management. PASS will help DOE-Headquarters to coordinate field office activities and provide technical and institutional support to the DOE field offices. PASS is designed to be used by anyone with minimum computer literacy and having contemporary computer hardware and software. It uses on-screen maps to choose and display a shipment route, and to display the tribal jurisdictions. With forms that are easy to understand, it provides information about each jurisdiction and points of contact. PASS records all contacts, commitments made, and actions taken.

Lester, M.; Liebow, E. [Battelle Human Affairs Research Center, Seattle, WA (United States); Holm, J. [USDOE Assistant Secretary for Environmental Management, Washington, DC (United States). Office of Special Programs

1994-05-01T23:59:59.000Z

217

Amended Notice of Intent for the Northern Pass Transmission Line Project Published in the Federal Register  

Broader source: Energy.gov [DOE]

The Department of Energy announces its intent to modify the scope of the Northern Pass Transmission Line Project Environmental Impact Statement and to conduct additional public scoping meetings. The Federal Register Notice, which is now available for downloading, includes information on how to submit comments and participate in the additional public scoping meetings.

218

FRACTAL SHAPED MICROSTRIP COUPLED LINE BAND PASS FILTERS FOR SUPPRESSION OF 2ND  

E-Print Network [OSTI]

1 FRACTAL SHAPED MICROSTRIP COUPLED LINE BAND PASS FILTERS FOR SUPPRESSION OF 2ND HARMONIC Il Kwon Koch fractal curves are proposed for the first time. These filters are fabricated on Liquid Crystal, the 2nd harmonic of fractal filters can be significantly suppressed through the use of fractal shapes

Tentzeris, Manos

219

Hillslope Dynamics in the Paonia-McClure Pass Area, Colorado, USA  

E-Print Network [OSTI]

of shallow landslides and to develop an optimum model of mapping susceptibility to landslides. This study suggests that the frequency-magnitude of the landslides in Paonia-McClure Pass area are related by a double pareto equation with values ?= 1.1, and ? = 1...

Regmi, Netra Raj

2011-10-21T23:59:59.000Z

220

New multi-rod linear actuator for direct-drive, wide mechanical band pass  

E-Print Network [OSTI]

(e.g. gears). This mechanical transmission is required in order to adapt the load to a standard motor), · reducing noise, · increasing movement control, · widening the mechanical band pass, · lowering maintenance. For automation applications, such as command (plane command, hard disk harm) or regulation (vibration

Boyer, Edmond

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Analysis of a tractable model for combustion instability: the effect of delay and low pass filtering  

E-Print Network [OSTI]

such as jet engines and gas turbine powerplants, when operating in lean premixed com- bustion, whichAnalysis of a tractable model for combustion instability: the effect of delay and low pass tractable model for combustion instability is proposed. The model is based on two coupled resonators

Paris-Sud XI, Université de

222

Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots  

SciTech Connect (OSTI)

The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France)] [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)] [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Física, Universidade Federal do Ceará, P.O. Box 6030, Fortaleza–CE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain)] [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Goñi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)] [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)

2014-01-06T23:59:59.000Z

223

Nucleation and Growth of GaN on GaAs (001) Substrates  

SciTech Connect (OSTI)

The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

1999-05-03T23:59:59.000Z

224

Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes  

SciTech Connect (OSTI)

We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States); Yarrison-Rice, Jan [Department of Physics, Miami University, Oxford, OH 45056 (United States); Gao, Qiang; Tan, Hoe; Jagadish, Chennupati [Department of Electronic Materials and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Etheridge, Joanne [Monash Centre for Electron Microscopy, Monash University, Victoria, 3800 (Australia); Wong, Bryan M. [Materials Chemistry Department, Sandia National Laboratories, Livermore, CA 94551 (United States)

2013-12-04T23:59:59.000Z

225

On strongly GA-convex functions and stochastic processes  

SciTech Connect (OSTI)

In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

Bekar, Nurgül Okur [Department of Statistics, Giresun University, Giresun (Turkey); Akdemir, Hande Günay; ??can, ?mdat [Department of Mathematics, Giresun University, Giresun (Turkey)

2014-08-20T23:59:59.000Z

226

Energy absorption in Ni-Mn-Ga/ polymer composites  

E-Print Network [OSTI]

In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

Feuchtwanger, Jorge

2006-01-01T23:59:59.000Z

227

Accurate characterization and improvement of GaAs microstrip attenuation  

E-Print Network [OSTI]

Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

Carroll, James Mason

2012-06-07T23:59:59.000Z

228

Height stabilization of GaSb/GaAs quantum dots by Al-rich capping  

SciTech Connect (OSTI)

GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.

Smakman, E. P., E-mail: e.p.smakman@tue.nl; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven (Netherlands); DeJarld, M.; Martin, A. J.; Millunchick, J. [Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Luengo-Kovac, M.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2014-09-01T23:59:59.000Z

229

Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates  

SciTech Connect (OSTI)

The vertical bulk (drain-bulk) current (I{sub db}) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I{sub db} (25-300 Degree-Sign C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E{sub a}), the (soft or destructive) vertical breakdown voltage (V{sub B}), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E{sub a} = 0.35 eV at T = 25-300 Degree-Sign C; V{sub B} = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E{sub a} = 2.5 eV at T > 265 Degree-Sign C; V{sub B} > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E{sub a} = 0.35 eV at T > 150 Degree-Sign C; V{sub B} = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

Perez-Tomas, A.; Fontsere, A.; Llobet, J. [IMB-CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, CAT (Spain); Placidi, M. [IREC, Jardins Dones de Negre 1, 08930 Sant Adria de Besos, Barcelona (Spain); Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Baron, N. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); PICOGIGA International, Pl M. Rebuffat, Courtaboeuf 7, 91140 Villejust (France)

2013-05-07T23:59:59.000Z

230

Multiband GaNAsP Quaternary Alloys  

SciTech Connect (OSTI)

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

2005-12-08T23:59:59.000Z

231

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+  

E-Print Network [OSTI]

A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

McKittrick, Joanna

232

AlGaAs/GaAs photovoltaic converters for high power narrowband radiation  

SciTech Connect (OSTI)

AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

2014-09-26T23:59:59.000Z

233

Recent progress in InGaAsSb/GaSb TPV devices  

SciTech Connect (OSTI)

AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

1996-05-01T23:59:59.000Z

234

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor  

SciTech Connect (OSTI)

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

2014-01-06T23:59:59.000Z

235

Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding  

SciTech Connect (OSTI)

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

2006-01-01T23:59:59.000Z

236

Point defect balance in epitaxial GaSb  

SciTech Connect (OSTI)

Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

Segercrantz, N., E-mail: natalie.segercrantz@aalto.fi; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FIN-00076 Aalto Espoo (Finland); Song, Y.; Wang, S. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Göteborg (Sweden); State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 865 Changning Road, Shanghai 200050 (China)

2014-08-25T23:59:59.000Z

237

Sacramento River Steelhead: Hatchery vs. Natural Smolt Outmigration  

E-Print Network [OSTI]

that made it to the Golden Gate Bridge listening station diddetected passing the Golden Gate Bridge over a more thanfish detected at the Golden Gate Bridge were from two groups

Sandstrom, Phil

2012-01-01T23:59:59.000Z

238

Behavior, association patterns and habitat use of a small community of bottlenose dolphins in San Luis Pass, Texas  

E-Print Network [OSTI]

BEHAVIOR, ASSOCIATION PATTERNS AND HABITAT USE OF A SMALL COMMUNITY OF BOTTLENOSE DOLPHINS IN SAN LUIS PASS, TEXAS A Thesis... and Fisheries Sciences BEHAVIOR, ASSOCIATION PATTERNS AND HABITAT USE OF A SMALL COMMUNITY OF BOTTLENOSE DOLPHINS IN SAN LUIS PASS, TEXAS A Thesis...

Henderson, Erin Elizabeth

2005-11-01T23:59:59.000Z

239

Reactive codoping of GaAlInP compound semiconductors  

DOE Patents [OSTI]

A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

2008-02-12T23:59:59.000Z

240

Feasibility of Tidal and Ocean Current Energy in False Pass, Aleutian Islands, Alaska FINAL REPORT  

SciTech Connect (OSTI)

The Aleutian Pribilof Islands Association was awarded a U.S. Department of Energy Tribal Energy Program grant (DE-EE0005624) for the Feasibility of Tidal and Ocean Current Energy in False Pass, Aleutian Islands, Alaska (Project). The goal of the Project was to perform a feasibility study to determine if a tidal energy project would be a viable means to generate electricity and heat to meet long-term fossil fuel use reduction goals, specifically to produce at least 30% of the electrical and heating needs of the tribally-owned buildings in False Pass. The Project Team included the Aleut Region organizations comprised of the Aleutian Pribilof Island Association (APIA), and Aleutian Pribilof Island Community Development Association (APICDA); the University of Alaska Anchorage, ORPC Alaska a wholly-owned subsidiary of Ocean Renewable Power Company (ORPC), City of False Pass, Benthic GeoScience, and the National Renewable Energy Laboratory (NREL). The following Project objectives were completed: collected existing bathymetric, tidal, and ocean current data to develop a basic model of current circulation at False Pass, measured current velocities at two sites for a full lunar cycle to establish the viability of the current resource, collected data on transmission infrastructure, electrical loads, and electrical generation at False Pass, performed economic analysis based on current costs of energy and amount of energy anticipated from and costs associated with the tidal energy project conceptual design and scoped environmental issues. Utilizing circulation modeling, the Project Team identified two target sites with strong potential for robust tidal energy resources in Isanotski Strait and another nearer the City of False Pass. In addition, the Project Team completed a survey of the electrical infrastructure, which identified likely sites of interconnection and clarified required transmission distances from the tidal energy resources. Based on resource and electrical data, the Project Team developed a conceptual tidal energy project design utilizing ORPC’s TidGen® Power System. While the Project Team has not committed to ORPC technology for future development of a False Pass project, this conceptual design was critical to informing the Project’s economic analysis. The results showed that power from a tidal energy project could be provided to the City of False at a rate at or below the cost of diesel generated electricity and sold to commercial customers at rates competitive with current market rates, providing a stable, flat priced, environmentally sound alternative to the diesel generation currently utilized for energy in the community. The Project Team concluded that with additional grants and private investment a tidal energy project at False Pass is well-positioned to be the first tidal energy project to be developed in Alaska, and the first tidal energy project to be interconnected to an isolated micro grid in the world. A viable project will be a model for similar projects in coastal Alaska.

Wright, Bruce Albert [Aleutian Pribilof Islands Association] [Aleutian Pribilof Islands Association

2014-05-07T23:59:59.000Z

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Survival and Passage of Juvenile Chinook Salmon and Steelhead Passing Through Bonneville Dam, 2010  

SciTech Connect (OSTI)

Pacific Northwest National Laboratory (PNNL) and subcontractors conducted an acoustic-telemetry study of juvenile salmonid fish passage and survival at Bonneville Dam in 2010. The study was conducted to assess the readiness of the monitoring system for official compliance studies under the 2008 Biological Opinion and Fish Accords and to assess performance measures including route-specific fish passage proportions, travel times, and survival based upon a single-release model. This also was the last year of evaluation of effects of a behavioral guidance device installed in the Powerhouse 2 forebay. The study relied on releases of live Juvenile Salmon Acoustic Telemetry System tagged smolts in the Columbia River and used acoustic telemetry to evaluate the approach, passage, and survival of passing juvenile salmon. This study supports the U.S. Army Corps of Engineers continual effort to improve conditions for juvenile anadromous fish passing through Columbia River dams.

Ploskey, Gene R.; Weiland, Mark A.; Hughes, James S.; Woodley, Christa M.; Deng, Zhiqun; Carlson, Thomas J.; Kim, Jin A.; Royer, Ida M.; Batten, George W.; Cushing, Aaron W.; Carpenter, Scott M.; Etherington, D. J.; Faber, Derrek M.; Fischer, Eric S.; Fu, Tao; Hennen, Matthew J.; Mitchell, T. D.; Monter, Tyrell J.; Skalski, J. R.; Townsend, Richard L.; Zimmerman, Shon A.

2012-09-01T23:59:59.000Z

242

Survival and Passage of Juvenile Chinook Salmon and Steelhead Passing through Bonneville Dam, 2010  

SciTech Connect (OSTI)

Pacific Northwest National Laboratory (PNNL) and subcontractors conducted an acoustic-telemetry study of juvenile salmonid fish passage and survival at Bonneville Dam in 2010. The study was conducted to assess the readiness of the monitoring system for official compliance studies under the 2008 Biological Opinion and Fish Accords and to assess performance measures including route-specific fish passage proportions, travel times, and survival based upon a single-release model. This also was the last year of evaluation of effects of a behavioral guidance device installed in the Powerhouse 2 forebay. The study relied on releases of live Juvenile Salmon Acoustic Telemetry System tagged smolts in the Columbia River and used acoustic telemetry to evaluate the approach, passage, and survival of passing juvenile salmon. This study supports the U.S. Army Corps of Engineers continual effort to improve conditions for juvenile anadromous fish passing through Columbia River dams.

Ploskey, Gene R.; Weiland, Mark A.; Hughes, James S.; Woodley, Christa M.; Deng, Zhiqun; Carlson, Thomas J.; Kim, Jin A.; Royer, Ida M.; Batten, George W.; Cushing, Aaron W.; Carpenter, Scott M.; Etherington, D. J.; Faber, Derrek M.; Fischer, Eric S.; Fu, Tao; Hennen, Matthew J.; Mitchell, Tyler; Monter, Tyrell J.; Skalski, John R.; Townsend, Richard L.; Zimmerman, Shon A.

2011-12-01T23:59:59.000Z

243

Selective ECR heating of trapped/passing electrons in the W7-X stellarator  

SciTech Connect (OSTI)

Using specific features of the magnetic equilibrium in the W7-X stellarator, ECRH scenarios with X2 and X3 modes are discussed. The aim is to explore the possibility of selective heating of the different classes of electrons, passing and trapped, by different RF beams with different frequencies, which can be launched from ports located in different crosssections of the device. Perspectives for this kind of experiments in W7-X are estimated numerically by coupling transport and ray tracing codes.

Marushchenko, N. B.; Erckmann, V.; Beidler, C. D.; Geiger, J.; Laqua, H. P.; Helander, P.; Maassberg, H.; Turkin, Y. [Max Planck Institute for Plasma Physics, EURATOM Association, Wendelsteinstr. 1, D-17491 Greifswald (Germany)

2014-02-12T23:59:59.000Z

244

EIS-0463: Presidential Permit Application for Northern Pass Transmission, New Hampshire  

Broader source: Energy.gov [DOE]

This EIS will evaluate the potential environmental impacts from DOE’s proposed Federal action of granting a Presidential permit to Northern Pass Transmission, LLC, to construct, operate, maintain, and connect a new electric transmission line across the U.S.-Canada border in northern New Hampshire. The U.S. Forest Service, White Mountain National Forest, and the U.S. Army Corps of Engineers, New England District, are cooperating agencies in the preparation of this EIS.

245

Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction  

SciTech Connect (OSTI)

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16° from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

2014-03-17T23:59:59.000Z

246

Development of polarization-controlled multi-pass Thomson scattering system in the GAMMA 10 tandem mirror  

SciTech Connect (OSTI)

In the GAMMA 10 tandem mirror, the typical electron density is comparable to that of the peripheral plasma of torus-type fusion devices. Therefore, an effective method to increase Thomson scattering (TS) signals is required in order to improve signal quality. In GAMMA 10, the yttrium-aluminum-garnet (YAG)-TS system comprises a laser, incident optics, light collection optics, signal detection electronics, and a data recording system. We have been developing a multi-pass TS method for a polarization-based system based on the GAMMA 10 YAG TS. To evaluate the effectiveness of the polarization-based configuration, the multi-pass system was installed in the GAMMA 10 YAG-TS system, which is capable of double-pass scattering. We carried out a Rayleigh scattering experiment and applied this double-pass scattering system to the GAMMA 10 plasma. The integrated scattering signal was made about twice as large by the double-pass system.

Yoshikawa, M.; Morimoto, M.; Shima, Y.; Kohagura, J.; Sakamoto, M.; Nakashima, Y.; Imai, T. [Plasma Research Center, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan); Yasuhara, R.; Yamada, I.; Kawahata, K.; Funaba, H. [National Institute for Fusion Science, 322-6 Oroshi-cho, Toki, Gifu 509-5292 (Japan); Minami, T. [Institute of Advanced Energy, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan)

2012-10-15T23:59:59.000Z

247

Tradeoffs for Efficiently Passing Juvenile Salmonids through Bonneville Dam on the Lower Columbia River  

SciTech Connect (OSTI)

We analyzed five years of route-specific fish-passage data acquired by fixed-aspect hydroacoustic sampling of juvenile salmonids passing downstream through Bonneville Dam. High passage effectiveness of surface-flow outlets relative to the spillway and turbines suggests that juvenile salmonids are preferentially selecting surface outlets over adjacent turbines. Seasonal estimates showed that median combined effectiveness of surface-flow outlets (7.8) was 7.1 times higher than that of the spillway (1.1) and 9.8 times higher than that of turbines (0.8). Islands prevent the spillway from attracting fish from either powerhouse, something that may occur at other projects. Regressions indicated that percent flow passing a specific route explained from 50 to 97% of fish-passage variation, and relations were useful for evaluating fish-passage alternatives. Fitted curves for surface-passage routes, including the sluiceway at Powerhouse 1 (B1) and Powerhouse 2 (B2) were much steeper at low percent low (2-15%) than were curves for the spillway or turbines. Regressions indicate that increasing surface-flow percentages of B1 flow from 1% to 10% could increase B1 sluiceway-passage efficiency from 40% to 83%. Increasing B2 flow to the B2 sluiceway from 4% to 15% could increase fish passage from 31% to 62%. Without spill, about 50% of fish passed by non-turbine routes.

Ploskey, Gene R.; Weiland, Mark A.; Kim, Jina

2008-12-01T23:59:59.000Z

248

Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure  

SciTech Connect (OSTI)

Photoluminescence was studied in GaAs/AlGaAs nanowires (NWs) with different radial heterostructures. We demonstrated that manipulation of the emission energy may be achieved by appropriate choice of the shell structure. The emission at highest energy is generated in the NWs with tunneling thin AlGaAs inner shell and thin GaAs outer shell due to recombination of the photoexcited electrons confined in the outer shell with the holes in the core. Lower energy emission was shown to occur in the NWs with thick outer shell grown in the form of a short-period GaAs/AlGaAs multiple quantum well structure. In this case, the tunneling probability through the multiple quantum wells controls the energy emitted by the NWs. The doping of core results in dominated low energy emission from the GaAs core.

Barbosa, B. G.; Arakaki, H.; Souza, C. A. de; Pusep, Yu. A. [Instituto de Fisica de São Carlos, Universidade de São Paulo, 13560-970 Sao Carlos, SP (Brazil)

2014-03-21T23:59:59.000Z

249

Prolactin messenger ribonucleic acid levels, prolactin synthesis, and radioimmunoassayable prolactin during the estrous cycle in the Golden Syrian hamster  

SciTech Connect (OSTI)

The purpose of this study was to observe the molecular dynamics of pituitary prolactin (PRL) gene expression during the estrous cycle of the Golden Syrian hamster. PRL messenger ribonucleic acid (mRNA) levels, PRL synthesis were measured in the morning on each day of the cycle. We observed that all of these PRL indices declined or did not change from Day 2 to Day 3 of the cycle. From Day 3 to Day 4 however, PRL mRNA levels increased 33-38% and media {sup 3}H-PRL increased 32-42%, while there were no significant changes in pituitary {sup 3}H-PRL, or RIA-PRL in the media or pituitary. From Day 4 to Day 1 (estrus) there was reciprocal change in the levels of {sup 3}H-PRL in the pituitary vs. the media, with the former increasing 37-50% and the latter decreasing 25-32%. Pituitary RIA-PRL did also increased 45-64% from Day 4 to Day 1 while media RIA-PRL did not change. These data are consistent with the following hypothesis: On the morning of proestrus(Day 4) in the hamster, PRL mRNA levels are elevated compared to those on Day 3, signaling an increase in PRL synthesis. This newly synthesized PRL is shunted into a readily releasable pool on the morning of Day 4 (contributing to the afternoon surge of serum PRL), and into a preferentially stored pool by the morning of Day 1.

Massa, J.S. (Univ. of Iowa, Iowa City (USA)); Blask, D.E. (Univ. of Arizona, Tucson (USA))

1990-01-01T23:59:59.000Z

250

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell  

SciTech Connect (OSTI)

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

2006-01-01T23:59:59.000Z

251

Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells  

SciTech Connect (OSTI)

In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Carrington, P. J.; Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2014-01-07T23:59:59.000Z

252

Efficiency enhancement of InGaN/GaN solar cells with nanostructures  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

2014-02-03T23:59:59.000Z

253

Graphene in ohmic contact for both n-GaN and p-GaN  

SciTech Connect (OSTI)

The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

2014-05-26T23:59:59.000Z

254

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates  

E-Print Network [OSTI]

.e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

Nabben, Reinhard

255

A Review of "Majesty and Humanity: Kings and Their Doubles in the Political Drama of the Spanish Golden Age" by Alban K. Forcione  

E-Print Network [OSTI]

years. For instance, the ?Conclusion? along with the last two chapters would provide a fresh and illuminating perspective on Baroque literature of Spain. The first two chapters could enrich a study of Columbus?s travel log or Cort?s?s ?Letters from... Mexico.? Whether read in parts or as a whole, Vilches?s book offers the reader a layered and insightful examination of early modern Spain?s ?Golden Age,? attune to all the contradictions that follow from this term. Alban K. Forcione. Majesty...

Bass, Laura

2011-01-01T23:59:59.000Z

256

EA-1968: Site-Wide Environmental Assessment of the U.S. Department of Energy National Renewable Energy Laboratory (NREL) South Table Mountain (STM) Campus, Golden, Colorado  

Broader source: Energy.gov [DOE]

DOE is preparing a Site-Wide Environmental Assessment to analyze the potential environmental impacts of possible site operations and improvements over the next five to ten years at DOE’s STM campus of NREL and nearby leased support facilities in Golden, Colorado. This proposed action would support DOE’s mission to research, develop, and deploy energy efficiency and renewable energy technologies and would consist of: • Research, routine laboratory, and site operation enhancements • New building construction and modifications of existing buildings • Infrastructure and utilities upgrades and enhancements

257

Biogas and Fuel Cells Workshop Summary Report: Proceedings from the Biogas and Fuel Cells Workshop, Golden, Colorado, June 11-13, 2012  

SciTech Connect (OSTI)

The U.S. Department of Energy (DOE) National Renewable Energy Laboratory (NREL) held a Biogas and Fuel Cells Workshop June 11-13, 2012, in Golden, Colorado, to discuss biogas and waste-to-energy technologies for fuel cell applications. The overall objective was to identify opportunities for coupling renewable biomethane with highly efficient fuel cells to produce electricity; heat; combined heat and power (CHP); or combined heat, hydrogen and power (CHHP) for stationary or motive applications. The workshop focused on biogas sourced from wastewater treatment plants (WWTPs), landfills, and industrial facilities that generate or process large amounts of organic waste, including large biofuel production facilities (biorefineries).

Not Available

2013-01-01T23:59:59.000Z

258

GaAs single quantum dot embedded into AlGaAs nanowire  

SciTech Connect (OSTI)

We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Néel, 17 rue des Martyrs, F-38054 Grenoble (France)

2013-12-04T23:59:59.000Z

259

Wavelength limits for InGaN quantum wells on GaN  

SciTech Connect (OSTI)

The emission wavelength of coherently strained InGaN quantum wells (QW) is limited by the maximum thickness before relaxation starts. For high indium contents x>40% the resulting wavelength decreases because quantum confinement dominates. For low indium content x<40% the electron hole wave function overlap (and hence radiative emission) is strongly reduced with increasing QW thickness due to the quantum confined Stark effect and imposes another limit. This results in a maximum usable emission wavelength at around 600?nm for QWs with 40%-50% indium content. Relaxed InGaN buffer layers could help to push this further, especially on non- and semi-polar orientations.

Pristovsek, Markus, E-mail: markus@pristovsek.de [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)] [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)

2013-06-17T23:59:59.000Z

260

Application of the ASME code in the design of the GA-4 and GA-9 casks  

SciTech Connect (OSTI)

General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

Mings, W.J. (USDOE Idaho Field Office, Idaho Falls, ID (United States)); Koploy, M.A. (General Atomics, San Diego, CA (United States))

1992-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Application of the ASME code in the design of the GA-4 and GA-9 casks  

SciTech Connect (OSTI)

General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

Mings, W.J. [USDOE Idaho Field Office, Idaho Falls, ID (United States); Koploy, M.A. [General Atomics, San Diego, CA (United States)

1992-08-01T23:59:59.000Z

262

Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces  

SciTech Connect (OSTI)

We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

2013-08-12T23:59:59.000Z

263

Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots  

SciTech Connect (OSTI)

In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074, Würzburg (Germany); Igusa, R.; Iwamoto, S.; Arakawa, Y. [University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

2014-09-15T23:59:59.000Z

264

AlGaAs/GaAs quantum well infrared detectors and modulators  

E-Print Network [OSTI]

to the quantum well. This optical transition wavelength lies in the mid infrared region of the spectrum. To get a more realistic picture of the optical transition in a 1-D quantum well, the non-parabolicity of the conduction band of GaAs is taken... into consideration. Further it is seen that with the change in temperature and doping concentration the width and peak of the absorption curve also changes. Based on the above calculations and results an AIGaAs/GaAs quantum well infrared photodetector...

Dave, Digant Praful

1990-01-01T23:59:59.000Z

265

Radiation Hard AlGaN Detectors and Imager  

SciTech Connect (OSTI)

Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

None

2012-05-01T23:59:59.000Z

266

A field investigation of the hydraulics and stability of Corpus Christi Water Exchange Pass, Texas  

E-Print Network [OSTI]

- dominant flood flow. 20 WIND SET-UP CONSIDERATIONS The average tidal range in the Gulf of Mexico at Mustang Island is approximately two feet. The average tidal range in Corpus Christi Bay is about . 70 foot. Because of these small tidal variations..., wind set-up is expected to have a significant and direct affect upon the tidal differential and therefore the flow velocities through Corpus Christi Water Exchange Pass. In Table 1, wind set-up in Corpus Christi Bay at the bay mouth of Corpus...

DeFehr, Kenneth Jay

1973-01-01T23:59:59.000Z

267

Jet impingement heat transfer in two-pass rotating rectangular channels  

E-Print Network [OSTI]

temperature of the blade material. Since the turbine blades are the next component downstream of the combustor, they must be cooled effectively to keep from burning out. The coolant for these blades is mostly air extracted &om the compressor of the engine...(Outward Flow) Coolant Supply(Inward Flow) Figure 3 Cross sectional view of jet impingement cooling in two-pass rotating channel However, the spent jets in rotation make the channel arrangement favor channel heat transfer &om the suction and pressure surfaces...

Zhang, Yuming

1996-01-01T23:59:59.000Z

268

A dynamic stability analysis of an aircraft passing through the trailing vortices of another aircraft  

E-Print Network [OSTI]

Santo, Jr. , B. S. , United States Air Force Academy Directed by: Dr. Balusu M. Rao A method is developed to predict the changes in the aerodynamic forces and moments on an aircraft as it passes through the trailing vortex system of another aircraft... as the test aircraft. The dynamic response of the test aircraft to an encounter with a trailing vortex system is predicted using a linear and a non-linear set of equations of motion. The calculated aerodynamic forces and moments are treated as forcing...

De Santo, Robert James William

2012-06-07T23:59:59.000Z

269

Method and system for compact, multi-pass pulsed laser amplifier  

DOE Patents [OSTI]

A laser amplifier includes an input aperture operable to receive laser radiation having a first polarization, an output aperture coupled to the input aperture by an optical path, and a polarizer disposed along an optical path. A transmission axis of the polarizer is aligned with the first polarization. The laser amplifier also includes n optical switch disposed along the optical path. The optical switch is operable to pass the laser radiation when operated in a first state and to reflect the laser radiation when operated in a second state. The laser amplifier further includes an optical gain element disposed along the optical path and a polarization rotation device disposed along the optical path.

Erlandson, Alvin Charles

2014-11-25T23:59:59.000Z

270

PIA - WEB iPASS System DOE PIA | Department of Energy  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - September 2006 The 2002OpticsPeriodical:Rocky Mountain OTCSunfloweriPASS System

271

Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique  

SciTech Connect (OSTI)

GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

2014-05-15T23:59:59.000Z

272

GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices  

E-Print Network [OSTI]

after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

Tsai, Chia-Ho

2006-01-01T23:59:59.000Z

273

Second stable regime of internal kink modes excited by barely passing energetic ions in tokamak plasmas  

SciTech Connect (OSTI)

The internal kink (fishbone) modes, driven by barely passing energetic ions (EIs), are numerically studied with the spatial distribution of the EIs taking into account. It is found that the modes with frequencies comparable to the toroidal precession frequencies are excited by resonant interaction with the EIs. Positive and negative density gradient dominating cases, corresponding to off- and near-axis depositions of neutral beam injection (NBI), respectively, are analyzed in detail. The most interesting and important feature of the modes is that there exists a second stable regime in higher {beta}{sub h} (=pressure of EIs/toroidal magnetic pressure) range, and the modes may only be excited by the barely passing EIs in a region of {beta}{sub th1}<{beta}{sub h}<{beta}{sub th2} ({beta}{sub th} is threshold or critical beta of EIs). Besides, the unstable modes require minimum density gradients and minimum radial positions of NBI deposition. The physics mechanism for the existence of the second stable regime is discussed. The results may provide a means of reducing or even preventing the loss of NBI energetic ions and increasing the heating efficiency by adjusting the pitch angle and driving the system into the second stable regime fast enough.

He, H. D.; Zheng, G. Y.; Long, Y. X.; He, Z. X.; Jiang, H. B.; Shen, Y.; Wang, L. F. [Southwestern Institute of Physics, Chengdu, Sichuan 610041 (China); Dong, J. Q. [Southwestern Institute of Physics, Chengdu, Sichuan 610041 (China); Institute for Fusion Theory and Simulation, Zhejiang University, Hangzhou (China); Fu, G. Y. [Princeton Plasma Physics Laboratory, Princeton, New Jersey 08543 (United States); Sheng, Z. M. [Institute for Fusion Theory and Simulation, Zhejiang University, Hangzhou (China)

2010-08-15T23:59:59.000Z

274

General Atomics (GA) | Princeton Plasma Physics Lab  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert Southwest Region service area. TheEPSCIResearch to sponsorGeneral Atomics (GA)

275

GA SNC Solar | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpen EnergyBoard" form. To create aGA SNC Solar Jump to:

276

EIS-0501: FERC Project Update | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

FERC Project Update EIS-0501: FERC Project Update Golden Pass LNG Export and Pipeline Project, Texas and Louisiana After conducting scoping for an EA for the proposed Golden Pass...

277

Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells  

SciTech Connect (OSTI)

In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

2014-01-21T23:59:59.000Z

278

Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat  

E-Print Network [OSTI]

Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

Shepelyansky, Dima

279

Development of a Bulk GaN Growth Technique for Low Defect Density...  

Broader source: Energy.gov (indexed) [DOE]

current due to bulk defects GaN is Grown Heteroepitaxially on Sapphire (and Silicon Carbide) Substrates * As grown GaN nucleation layers contain disordered GaN with many...

280

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges  

SciTech Connect (OSTI)

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

2013-11-04T23:59:59.000Z

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

The Essentials for GA Water Planning The Relationship  

E-Print Network [OSTI]

" FL Water Law Regulated Riparianism "Heavy" Admin Water Law ? #12;Comprehensive Water Resource Study Supply a. Water Allocation ­ Withdrawal Permit Program b. Water Storage & Delivery c. Interbasin TransferThe Essentials for GA Water Planning The Relationship Between the Proposed GA State Comprehensive

Rosemond, Amy Daum

282

CoNiGa High Temperature Shape Memory Alloys  

E-Print Network [OSTI]

commercially successful SMAs such as NiTi and Cu-based alloys. In recent years, the CoNiGa system has emerged as a new ferromagnetic shape memory alloy with some compositions exhibiting high martensitic transformation temperatures which makes CoNiGa a potential...

Dogan, Ebubekir

2011-10-21T23:59:59.000Z

283

Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n-lnGaAs/lnP/p-InGaAs heterostructures  

E-Print Network [OSTI]

Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n (Received 23 November 1992; accepted for publication 4 March 1993) The realization of collector-up light for the collector stripe definition. Electrons, injected over the wide-gap heterostructure barrier (InAlAs or In

Luryi, Serge

284

Golden - Local Information | NREL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickr Flickr Editor'sshortGeothermalGo Back to School withDOE

285

Golden Field Office  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-UpHeatMulti-Dimensional Subject: Guidance forGeospatialSession)ShopTheDepartmentGo

286

Partially filled intermediate band of Cr-doped GaN films  

SciTech Connect (OSTI)

We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

2012-05-14T23:59:59.000Z

287

Elastic properties of Pu metal and Pu-Ga alloys  

SciTech Connect (OSTI)

We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

2010-01-05T23:59:59.000Z

288

GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications  

SciTech Connect (OSTI)

We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

2014-03-24T23:59:59.000Z

289

Elephant found in Monkman Pass - British Columbia gas play has world class potential  

SciTech Connect (OSTI)

This paper summarizes the exploration activity of BP Canada in the Monkman Pass area of Canada along with the historical activity that has led to this major natural gas discovery. Estimated reserves in this area, from two producing zones, exceeds six trillion cubic feet. Fewer than 5 percent of fields in North America have that type of potential. The main producing horizons were itentified and the Pardonet and Baldonnel formations which are comprised mainly of dolomites with some interbedded sandstones. Primary porosity in these formations is quite low, but extensive fracture systems in the crestal and forelimb areas of the structures enhance the reservoirs. The paper also discusses the cost and economics of extracting and shipping this natural gas to market and remaining competitive.

Shirley, K.

1992-06-01T23:59:59.000Z

290

Understanding barotrauma in fish passing hydro structures: a global strategy for sustainable development of water resources  

SciTech Connect (OSTI)

Freshwater fishes are one of the most imperiled groups of vertebrates and species declines have been linked to a number of anthropogenic influences. This is alarming as the diversity and stability of populations are at risk. In addition, freshwater fish serve as important protein sources, particularly in developing countries. One of the focal activities thought to influence freshwater fish population declines is water resource development, which is anticipated to increase over the next several decades. For fish encountering hydro structures, such as passing through hydroturbines, there may be a rapid decrease in pressure which can lead to injuries commonly referred to as barotraumas. The authors summarize the research to date that has examined the effects of rapid pressure changes on fish and outline the most important factors to consider (i.e., swim bladder morphology, depth of acclimation, migration pattern and life stage) when examining the susceptibility of barotraumas for fish of interest.

Brown, Richard S.; Colotelo, Alison HA; Pflugrath, Brett D.; Boys, Craig A.; Baumgartner, Lee J.; Deng, Zhiqun; Silva, Luiz G.; Brauner, Colin J.; Mallen-Cooper, Martin; Phonekhampeng, Oudom; Thorncraft, Garry; Singhanouvong, Douangkham

2014-03-24T23:59:59.000Z

291

Message passing for integrating and assessing renewable generation in a redundant power grid  

SciTech Connect (OSTI)

A simplified model of a redundant power grid is used to study integration of fluctuating renewable generation. The grid consists of large number of generator and consumer nodes. The net power consumption is determined by the difference between the gross consumption and the level of renewable generation. The gross consumption is drawn from a narrow distribution representing the predictability of aggregated loads, and we consider two different distributions representing wind and solar resources. Each generator is connected to D consumers, and redundancy is built in by connecting R {le} D of these consumers to other generators. The lines are switchable so that at any instance each consumer is connected to a single generator. We explore the capacity of the renewable generation by determining the level of 'firm' generation capacity that can be displaced for different levels of redundancy R. We also develop message-passing control algorithm for finding switch sellings where no generator is overloaded.

Zdeborova, Lenka [Los Alamos National Laboratory; Backhaus, Scott [Los Alamos National Laboratory; Chertkov, Michael [Los Alamos National Laboratory

2009-01-01T23:59:59.000Z

292

Simulation of the High-Pass Filter for 56MHz Cavity for RHIC  

SciTech Connect (OSTI)

The 56MHz Superconducting RF (SRF) cavity for RHIC places high demands High Order Mode (HOM) damping, as well as requiring a high field at gap with fundamental mode frequency. The damper of 56MHz cavity is designed to extract all modes to the resistance load outside, including the fundamental mode. Therefore, the circuit must incorporate a high-pass filter to reflect back the fundamental mode into the cavity. In this paper, we show the good frequency response map obtained from our filter's design. We extract a circuit diagram from the microwave elements that simulate well the frequency spectrum of the finalized filter. We also demonstrate that the power dissipation on the filter over its frequency range is small enough for cryogenic cooling.

Wu, Q.; Ben-Zvi, I.

2010-05-23T23:59:59.000Z

293

A grid-enabled MPI : message passing in heterogeneous distributed computing systems.  

SciTech Connect (OSTI)

Application development for high-performance distributed computing systems, or computational grids as they are sometimes called, requires grid-enabled tools that hide mundate aspects of the heterogeneous grid environment without compromising performance. As part of an investigation of these issues, they have developed MPICH-G, a grid-enabled implementation of the Message Passing Interface (MPI) that allows a user to run MPI programs across multiple computers at different sites using the same commands that would be used on a parallel computer. This library extends the Argonne MPICH implementation of MPI to use services provided by the globus grid toolkit. In this paper, they describe the MPICH-G implementation and present preliminary performance results.

Foster, I.; Karonis, N. T.

2000-11-30T23:59:59.000Z

294

Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach  

E-Print Network [OSTI]

Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high

Itoh, Tatsuo

295

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate  

E-Print Network [OSTI]

AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

York, Robert A.

296

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations  

E-Print Network [OSTI]

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

2007-01-01T23:59:59.000Z

297

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network [OSTI]

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

298

Fabrication of quantum point contacts by engraving GaAsAlGaAs heterostructures with a diamond tip  

E-Print Network [OSTI]

by hot-filament chemical vapor deposition of polycrystalline diamond onto a prepat- terned siliconFabrication of quantum point contacts by engraving GaAsÕAlGaAs heterostructures with a diamond tip for publication 17 July 2002 We use the all-diamond tip of an atomic force microscope for the direct engraving

Hohls, Frank

299

OPTIMIZATION OF GaN WINDOW LAYER FOR InGaN SOLAR CELLS USING POLARIZATION EFFECT  

E-Print Network [OSTI]

on the design of wide-band gap GaN window layers for InGaN solar cells. Window layers serve to passivate the top into account during design of the solar cell to improve its collection efficiency. Previously, we have. The present work is a subset of the design optimization process for such solar cells, where we focus

Honsberg, Christiana

300

Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors  

E-Print Network [OSTI]

the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm Ga...

Johnson, Derek Wade

2014-07-31T23:59:59.000Z

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics  

E-Print Network [OSTI]

injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

Klotzkin, David

302

Diffusion of a Ga adatom on the GaAs(001)c(44)heterodimer surface: A first principles study  

E-Print Network [OSTI]

Diffusion of a Ga adatom on the GaAs(001)c(4×4)heterodimer surface: A first principles study J Diffusion barriers Reconstruction Density functional calculations The adsorption and diffusion behavior functional theory (DFT) computations in the local density approxima- tion. Structural and bonding features

Khare, Sanjay V.

303

Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields  

E-Print Network [OSTI]

Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures with increasing external electric field, with the radiative component exhibiting weaker field dependence. © 2009 applied electric field in Ref. 12, the electric field dependent radiative recombination in particular has

Demir, Hilmi Volkan

304

Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures M. Geddo,1,a)  

E-Print Network [OSTI]

Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures M. Geddo,1,a) M. Patrini,1 G; accepted 5 May 2011; published online 20 June 2011) The effect of hydrogen irradiation on the optical for fiber optic communications. These promising results in view of the development of waveguides deserve

305

An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3  

E-Print Network [OSTI]

out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

306

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes  

E-Print Network [OSTI]

Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

Wetzel, Christian M.

307

Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers  

E-Print Network [OSTI]

Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers C. Wetzel, Nagoya, Japan Received 11 December 1995; accepted for publication 21 February 1996 Infrared reflection, their alloys and potential substrates need to be investigated as well. Here we present a study of the infrared

Wetzel, Christian M.

308

AVTA Federal Fleet PEV Readiness Data Logging and Characterization Study for the National Park Service: Golden Gate National Recreation Area  

SciTech Connect (OSTI)

Battelle Energy Alliance, LLC, managing and operating contractor for the U.S. Department of Energy's Idaho National Laboratory, is the lead laboratory for U.S. Department of Energy Advanced Vehicle Testing. Battelle Energy Alliance, LLC contracted with Intertek Testing Services, North America (ITSNA) to collect data on federal fleet operations as part of the Advanced Vehicle Testing Activity's Federal Fleet Vehicle Data Logging and Characterization study. The Advanced Vehicle Testing Activity study seeks to collect data to validate the utilization of advanced electric drive vehicle transportation. This report focuses on the Golden Gate National Recreation Area (GGNRA) fleet to identify daily operational characteristics of select vehicles and report findings on vehicle and mission characterizations to support the successful introduction of plug-in electric vehicles (PEVs) into the agencies' fleets. Individual observations of these selected vehicles provide the basis for recommendations related to electric vehicle adoption and whether a battery electric vehicle or plug-in hybrid electric vehicle (PHEV) (collectively PEVs) can fulfill the mission requirements. GGNRA identified 182 vehicles in its fleet, which are under the management of the U.S. General Services Administration. Fleet vehicle mission categories are defined in Section 4, and while the GGNRA vehicles conduct many different missions, only two (i.e., support and law enforcement missions) were selected by agency management to be part of this fleet evaluation. The selected vehicles included sedans, trucks, and sport-utility vehicles. This report will show that battery electric vehicles and/or PHEVs are capable of performing the required missions and providing an alternative vehicle for support vehicles and PHEVs provide the same for law enforcement, because each has a sufficient range for individual trips and time is available each day for charging to accommodate multiple trips per day. These charging events could occur at the vehicle home base, high-use work areas, or intermediately along routes that the vehicles frequently travel. Replacement of vehicles in the current fleet would result in significant reductions in the emission of greenhouse gases and petroleum use, while also reducing fuel costs. The San Francisco Bay Area is a leader in the adoption of PEVs in the United States. PEV charging stations, or more appropriately identified as electric vehicle supply equipment, located on the GGNRA facility would be a benefit for both GGNRA fleets and general public use. Fleet drivers and park visitors operating privately owned PEVs benefit by using the charging infrastructure. ITSNA recommends location analysis of the GGNRA site to identify the optimal placement of the electric vehicle supply equipment station. ITSNA recognizes the support of Idaho National Laboratory and ICF International for their efforts to initiate communication with the National Parks Service and GGNRA for participation in the study. ITSNA is pleased to provide this report and is encouraged by the high interest and support from the National Park Service and GGNRA personnel.

Stephen Schey; Jim Francfort

2014-03-01T23:59:59.000Z

309

Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings  

SciTech Connect (OSTI)

The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Carrington, P. J. [Department of Electronic and Electrical Engineering, University College London, London (United Kingdom); Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

2014-07-28T23:59:59.000Z

310

Single photon emission from site-controlled InGaN/GaN quantum dots  

SciTech Connect (OSTI)

Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90?K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%–25% exhibited single photon emission at 10?K.

Zhang, Lei; Hill, Tyler A.; Deng, Hui, E-mail: dengh@umich.edu [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States)] [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States); Teng, Chu-Hsiang; Lee, Leung-Kway; Ku, Pei-Cheng, E-mail: peicheng@umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)] [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

2013-11-04T23:59:59.000Z

311

Large linear magnetoresistance in a GaAs/AlGaAs heterostructure  

SciTech Connect (OSTI)

We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

2013-12-04T23:59:59.000Z

312

Sidewall passivation for InGaN/GaN nanopillar light emitting diodes  

SciTech Connect (OSTI)

We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2014-07-07T23:59:59.000Z

313

Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells  

SciTech Connect (OSTI)

High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

2014-10-21T23:59:59.000Z

314

Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well  

SciTech Connect (OSTI)

The relaxation of lattice-mismatched strain by deep postetching was systematically investigated for InGaN/GaN multiple quantum wells (MQWs). A planar heterojunction wafer, which included an In{sub 0.21}Ga{sub 0.79}N (3.2 nm)/GaN (14.8 nm) MQW, was etched by inductively coupled plasma dry etching, to fabricate high-density nanopillar, nanostripe, and nanohole arrays. The etching depth was 570 nm for all nanostructures. The diameter of the nanopillars was varied from 50 to 300 nm, then the mesa stripe width of the nanostripes and the diameter of the nanoholes were varied from 100 nm to 440 nm and 50 nm to 310 nm, respectively. The effect of strain relaxation on various optical properties was investigated. For example, in an array of nanopillars with diameter 130 nm and interval 250 nm, a large blueshift in the photoluminescence (PL) emission peak from 510 nm (as-grown) to 459 nm occurred at room temperature (RT). PL internal quantum efficiency (defined by the ratio of PL integral intensity at 300 K to that at 4.2 K) was enhanced from 34% (as-grown) to 60%, and the PL decay time at 4.2 K was reduced from 22 ns (as-grown) to 4.2 ns. These results clearly indicate the reduction of lattice-mismatched strain by postetching, which enhanced strain reduction with decreasing nanopillar diameter down to a diameter of 130 nm, where the strain reduction became saturated. The dependence of RT-PL decay time on nanopillar diameter was measured, and the surface nonradiative recombination velocity was estimated to be 5.8x10{sup 2} cm/s. This relatively slow rate indicates a little etching damage.

Ramesh, V.; Kikuchi, A.; Kishino, K. [Department of Electrical and Electronics Engineering, Sophia University, Tokyo 102-8554, Japan and Nano-technology Research Center, Sophia University, Tokyo 102-8554 (Japan); CREST, JST, Saitama 332-0012 (Japan); Funato, M.; Kawakami, Y. [CREST, JST, Saitama 332-0012 (Japan); Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)

2010-06-15T23:59:59.000Z

315

Field dependent emission rates in radiation damaged GaAs  

SciTech Connect (OSTI)

We have measured the temperature and field dependence of emission rates from five traps in electron damaged GaAs. Four of the traps have previously been identified as radiation defects. One of the traps, seen in higher doped diodes, has not been previously identified. We have fit the data to a multiphonon emission theory that allows recombination in GaAs to be characterized over a broad range of temperature and electric field. These results demonstrate an efficient method to calculate field-dependent emission rates in GaAs.

Fleming, R. M.; Myers, S. M.; Wampler, W. R.; Lang, D. V.; Seager, C. H.; Campbell, J. M. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)

2014-07-07T23:59:59.000Z

316

Effect of Sb on the Properties of GaInP Top Cells (Presentation)  

SciTech Connect (OSTI)

The summary of this report is that: (1) Sb can be used to increase V{sub oc} of a GaInP top cell; (2) the photovoltaic quality of GaInP is relatively unaffected by the presence of Sb; and (3) Sb-doped GaInP/GaAs tandem cells show promise for achieving efficiencies over 32%.

Olson, J. M.; McMahon, W. E.; Kurtz, S.

2006-05-01T23:59:59.000Z

317

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices  

SciTech Connect (OSTI)

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy); Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio [University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

2014-02-21T23:59:59.000Z

318

Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs  

SciTech Connect (OSTI)

The waveguide effect of GaAsSb quantum wells in a semiconductor-laser structure based on GaAs is studied theoretically and experimentally. It is shown that quantum wells themselves can be used as waveguide layers in the laser structure. As the excitation-power density attains a value of 2 kW/cm{sup 2} at liquid-nitrogen temperature, superluminescence at the wavelength corresponding to the optical transition in bulk GaAs (at 835 nm) is observed.

Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Afonenko, A. A. [Belarussian State University (Belarus)] [Belarussian State University (Belarus); Dikareva, N. V. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation); Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Kudryavtsev, K. E.; Morozov, S. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Nekorkin, S. M. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)

2013-11-15T23:59:59.000Z

319

Electrical spin injection using GaCrN in a GaN based spin light emitting diode  

SciTech Connect (OSTI)

We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

Banerjee, D.; Ganguly, S.; Saha, D., E-mail: dipankarsaha@iitb.ac.in [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); IITB-Monash Research Academy, Indian Institute of Technology Bombay, Mumbai 400076 (India); Adari, R.; Sankaranarayan, S.; Kumar, A. [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India)] [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S. [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)] [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)

2013-12-09T23:59:59.000Z

320

Uranium hydrogeochemical and stream sediment reconnaissance of the Survey Pass NTMS quadrangle, Alaska  

SciTech Connect (OSTI)

This report presents results of a Hydrogeochemical and Stream Sediment Reconnaissance (HSSR) of the Survey Pass NTMS quadrangle, Alaska. In addition to this abbreviated data release, more complete data are available to the public in machine-readable form through the Grand Junction Office Information System at Oak Ridge National Laboratory. Presented in this data release are location data, field analyses, and laboratory analyses of several different sample media. For the sake of brevity, many field site observations have not been included in this volume. These data are, however, available on the magnetic tape. Appendix A describes the sample media and summarizes the analytical results for each medium. The data were subdivided by one of the Los Alamos National Laboratory (LANL) sorting programs of Zinkl and others (1981a) into stream sediment samples. For the group which contains a sufficient number of observations, statistical tables, tables of raw data, and 1:1000000 scale maps of pertinent elements have been included in this report. In addition, maps showing results of multivariate statistical analyses have been included. Further information about the HSSR program in general, or about the LANL portion of the program in particular, can be obtained in quarterly or semiannual program progress reports on open-file at DOE's Technical Library in Grand Junction. Information about the field and analytical procedures used by LANL during sample collection and analysis may be found in any HSSR data release prepared by the LANL and will not be included in this report.

Shettel, D.L. Jr.; Langfeldt, S.L.; Youngquist, C.A.; D'Andrea, R.F. Jr.; Zinkl, R.J. (comps.) [comps.

1981-09-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Sluiceway Operations to Pass Juvenile Salmonids at The Dalles Dam, Columbia River, USA  

SciTech Connect (OSTI)

Existing ice and trash sluiceways are commonly used to pass juvenile salmonids downstream at hydropower dams through a benign, non-turbine route. At The Dalles Dam on the Columbia River, managers undertook optimizing operations of sluiceway weirs to maximize survival of juvenile salmonids at the powerhouse. We applied fixed-location hydroacoustic methods to compare fish passage rates and sluiceway efficiencies for two weir configurations during 2004 and 2005: three weirs versus six weirs, located at the mid- versus east powerhouse, respectively. We also analyzed horizontal distributions of passage at the sluiceway and turbines and the effects of operating turbines beneath open sluiceway gates to provide supporting data relevant to operations optimization. Based on the findings, we recommend the following for long-term operations for the sluiceway at The Dalles Dam: open six rather than three sluiceway weirs to take advantage of the maximum hydraulic capacity of the sluiceway; open the three weirs above the western-most operating main turbine unit (MU) and the three weirs at MU 8 where turbine passage rates are relatively high; operate the turbine units below open sluiceway weirs as a standard procedure; operate the sluiceway 24 h/d year-round to maximize its benefits to juvenile salmonids; and use the same operations for spring and summer emigrants. These operational concepts are transferable to dams where sluiceway surface flow outlets are used protect downstream migrating fishes.

Johnson, Gary E.; Khan, Fenton; Skalski, J. R.; Klatte, Bernard A.

2013-11-20T23:59:59.000Z

322

Message passing and shared address space parallelism on an SMP cluster  

SciTech Connect (OSTI)

Currently, message passing (MP) and shared address space (SAS) are the two leading parallel programming paradigms. MP has been standardized with MPI, and is the more common and mature approach; however, code development can be extremely difficult, especially for irregularly structured computations. SAS offers substantial ease of programming, but may suffer from performance limitations due to poor spatial locality and high protocol overhead. In this paper, we compare the performance of and the programming effort required for six applications under both programming models on a 32-processor PC-SMP cluster, a platform that is becoming increasingly attractive for high-end scientific computing. Our application suite consists of codes that typically do not exhibit scalable performance under shared-memory programming due to their high communication-to-computation ratios and/or complex communication patterns. Results indicate that SAS can achieve about half the parallel efficiency of MPI for mo st of our applications, while being competitive for the others. A hybrid MPI + SAS strategy shows only a small performance advantage over pure MPI in some cases. Finally, improved implementations of two MPI collective operations on PC-SMP clusters are presented.

Shan, Hongzhang; Singh, Jaswinder P.; Oliker, Leonid; Biswas, Rupak

2002-09-25T23:59:59.000Z

323

The First 100 LAT Gamma-Ray Bursts: A New Detection Algorithm and Pass 8  

E-Print Network [OSTI]

Observations of Gamma-Ray Bursts with the Fermi Large Area Telescope have prompted theoretical advances and posed big challenges in the understanding of such extreme sources, despite the fact that GRB emission above 100 MeV is a fairly rare event. The first Fermi/LAT GRB catalog, published a year ago, presented 28 detections out of ~300 bursts detected by the Fermi Gamma-Ray Burst Monitor (GBM) within the LAT field of view. Building on the results from that work and on recent development in the understanding of the systematic errors on GBM localizations, we developed a new detection algorithm which increased the number of detections by 40 %. Even more recently the development of the new event analysis for the LAT ("Pass 8") has increased the number of detections within the first 3 years of the mission to 45, up 50 % with respect to the published catalog. The second LAT GRB catalog, in preparation, will cover more than 6 years of the mission and will break the barrier of 100 detected GRBs, a more than 20-fold ...

Vianello, Giacomo

2015-01-01T23:59:59.000Z

324

Beta-decay branching ratios of 62Ga  

E-Print Network [OSTI]

Beta-decay branching ratios of 62Ga have been measured at the IGISOL facility of the Accelerator Laboratory of the University of Jyvaskyla. 62Ga is one of the heavier Tz = 0, 0+ -> 0+ beta-emitting nuclides used to determine the vector coupling constant of the weak interaction and the Vud quark-mixing matrix element. For part of the experimental studies presented here, the JYFLTRAP facility has been employed to prepare isotopically pure beams of 62Ga. The branching ratio obtained, BR= 99.893(24)%, for the super-allowed branch is in agreement with previous measurements and allows to determine the ft value and the universal Ft value for the super-allowed beta decay of 62Ga.

A. Bey; B. Blank; G. Canchel; C. Dossat; J. Giovinazzo; I. Matea; V. Elomaa; T. Eronen; U. Hager; M. Hakala; A. Jokinen; A. Kankainen; I. Moore; H. Penttila; S. Rinta-Antila; A. Saastamoinen; T. Sonoda; J. Aysto; N. Adimi; G. De France; J. C. Thomas; G. Voltolini; T. Chaventré

2008-04-17T23:59:59.000Z

325

Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot  

SciTech Connect (OSTI)

In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

Emre Kavruk, Ahmet, E-mail: aekavruk@selcuk.edu.tr, E-mail: aekavruk@gmail.com; Koc, Fatih [Physics Department, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Sahin, Mehmet, E-mail: mehmet.sahin@agu.edu.tr, E-mail: mehsahin@gmail.com [Physics Department, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Department of Material Sciences and Nanotechnology Engineering, Abdullah Gul University, Kayseri (Turkey)

2013-11-14T23:59:59.000Z

326

Transverse acoustic actuation of Ni-Mn-Ga single crystals  

E-Print Network [OSTI]

Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

Simon, Jesse Matthew

2007-01-01T23:59:59.000Z

327

Lattice vibrations of pure and doped GaSe  

SciTech Connect (OSTI)

The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

2006-04-13T23:59:59.000Z

328

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents [OSTI]

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

329

Announcement of Change in Public Meeting Location for the Northern Pass Transmission Line Project Published in the Federal Register  

Broader source: Energy.gov [DOE]

The Department announces a change of location for the September 26, 2013 public scoping meeting for the Northern Pass Transmission Line Project to Colebrook Elementary School, 27 Dumont Street, Colebrook, NH. The meeting will be from 5 to 8 p.m.

330

In order to swim, fish transfer momentum to the surrounding water by passing waves of bending down their bodies. By  

E-Print Network [OSTI]

In order to swim, fish transfer momentum to the surrounding water by passing waves of bending down kinematic variables describe the shape and speed of the undulatory wave and, along with the caudal fin kinematics of their axial midline. Wave mechanics Blight (1976, 1977) suggested that the precaudal region

McHenry, Matt

331

On Monday, January 14th , 2013, our colleague, Dr. Dave Pariser, passed away unexpectedly. Dave was a  

E-Print Network [OSTI]

On Monday, January 14th , 2013, our colleague, Dr. Dave Pariser, passed away unexpectedly. Dave policy. We'll miss Dave, but he lives on in all of the lives he impacted. The Dave Pariser Memorial of the donation and choose the designated fund, the Dave Pariser Memorial Scholarship Fund. http

332

PIV flow measurements for heat transfer characterization in two-pass square channels with smooth and 90 ribbed walls  

E-Print Network [OSTI]

PIV flow measurements for heat transfer characterization in two-pass square channels with smooth the correlation between the high- Reynolds number turbulent flow and wall heat transfer characteristics in a two number (Re) of 30,000. The PIV measurement results were compared with the heat transfer experimental data

Kihm, IconKenneth David

333

Student Health Advisory Board Meeting, April 15, 2013. Passed June 3, 2013. Oregon State University Student Health Services  

E-Print Network [OSTI]

information about intent and options to raise level of care. Jaya will ask Jeff Luck in Public HealthMinutes Student Health Advisory Board Meeting, April 15, 2013. Passed June 3, 2013. Oregon State University Student Health Services I. Call to Order. A meeting of the OSU Student Health Services Student

Tullos, Desiree

334

Tobacco-Free USC The University of South Carolina passed a Campus Wide Tobacco Free policy on  

E-Print Network [OSTI]

Scripting Tobacco-Free USC The University of South Carolina passed a Campus Wide Tobacco Free the person of the tobacco-free policy. E ­ "Enforce" the policy: ask the person to stop using the tobacco that there are free resources here on campus to help you quit tobacco if you are ready. Visit the sc

Almor, Amit

335

Scattering Theory When an x-ray beam (or neutron or light) passes through a material with  

E-Print Network [OSTI]

Scattering Theory When an x-ray beam (or neutron or light) passes through a material radiation is scattered in directions that differ from that of the incident beam. Scattering arises since x of scattered radiation resulting from this process bears a direct relationship to the structure (the pattern

Beaucage, Gregory

336

Metro/Transit Bus Pass Reimbursement Requirements The program is only available for CSUF faculty, staff, or students.  

E-Print Network [OSTI]

apply by the 15th of the month prior to the first month of reimbursement. Eligible non-permit holders receive 100% reimbursement of the Metro monthly pass cost (max $75). Eligible permit holders receive 25) 278-1382 FOR OFFICE USE ONLY Y/N Permit #: Initials: Date: Semester Parking Permit Approved Entered

de Lijser, Peter

337

Numerical Simulation of Flow and Heat Transfer in Internal Multi-Pass Cooling Channel within Gas Turbine Blade  

E-Print Network [OSTI]

four-pass channel with two different inlet settings. The main flowing channel was rectangular channel (AR=2:1) with hydraulic diameter (Dh ) equals to 2/3 inch (16.9 mm). The first and fourth channel were set as different aspect ratio (AR=2:1; AR=1...

Chu, Hung-Chieh 1979-

2012-11-16T23:59:59.000Z

338

2014Staff Learning & DeveLopment reSource guiDe for acaDemic & paSS Staff  

E-Print Network [OSTI]

CREATINgTHELEADINgEDgE(CLE):REgIONAL MANAGEMENT DEVELOPMENT PROGRAM: CHEC 34 LEADERSHIP PART 1: PERSONAL: MANAGING SUBSTANCE ABUSE 41 PPS FOR MANAGERS OF PASS STAFF 42 personal leadership skills 43 ASSERTIVENESS RESEARCH CONTRACTS & INTELLECTUAL PROPERTY INDUCTION 54 resoUrce managemenT 55 UNDERSTANDING BASIC

Jarrett, Thomas H.

339

Anti-phase domains in cubic GaN  

SciTech Connect (OSTI)

The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {l_brace}111{r_brace} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, {mu}-Raman and cathodoluminescence spectroscopy.

Maria Kemper, Ricarda; Schupp, Thorsten; Haeberlen, Maik; Lindner, Joerg; Josef As, Donat [University of Paderborn, Department of Physics, Warburger Str. 100, D-33098 Paderborn (Germany); Niendorf, Thomas; Maier, Hans-Juergen [University of Paderborn, Lehrstuhl fuer Werkstoffkunde, Pohlweg 47-49, D-33098 Paderborn (Germany); Dempewolf, Anja; Bertram, Frank; Christen, Juergen [University of Magdeburg, Institut fuer Festkoerperphysik, P.O. Box 4120, D-39016 Magdeburg (Germany); Kirste, Ronny; Hoffmann, Axel [Technische Universitaet Berlin, Institute of Solid State Physics, Hardenbergstr. 36, D-10623 Berlin (Germany)

2011-12-15T23:59:59.000Z

340

Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching  

E-Print Network [OSTI]

The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into ...

Chen, A.

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas  

SciTech Connect (OSTI)

Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

2013-12-23T23:59:59.000Z

342

Epitaxial growth of Cu,,In,Ga...Se2 on GaAs,,110... and A. Rockett  

E-Print Network [OSTI]

. INTRODUCTION The Cu(In, Ga)Se2 CIGS absorber layer in a recent record-efficiency CIGS solar cell1 has a 220.13 Commercially supplied ``epi-ready'' liquid- encapsulated Czo

Rockett, Angus

343

Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods  

E-Print Network [OSTI]

Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency droop induced by density-activated defect recombination in nanorod structure of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that the improvement is a combined effect of the amendment contributed by lateral carrier confinement and the deterioration made by surface trapping.

Shi, Chentian; Yang, Fan; Park, Min Joo; Kwak, Joon Seop; Jung, Sukkoo; Choi, Yoon-Ho; Wang, Xiaoyong; Xiao, Min

2013-01-01T23:59:59.000Z

344

Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces  

SciTech Connect (OSTI)

We report on green (550–560?nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (?500?A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (?550?nm at room temperature). At high current densities (>1?kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4?kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14?kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

Ledentsov, N. N., E-mail: nikolay.ledentsov@v-i-systems.com; Shchukin, V. A. [VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623 (Germany); Lyytikäinen, J.; Okhotnikov, O. [Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720 (Finland); Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V. [A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation); Schlichting, S.; Nippert, F.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623 (Germany)

2014-11-03T23:59:59.000Z

345

Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk  

SciTech Connect (OSTI)

Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280?nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

2014-11-07T23:59:59.000Z

346

The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa  

SciTech Connect (OSTI)

We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

Özduran, Mustafa [Ahi Evran Üniversitesi Fen Edebiyat Fakültesi Fizik Bölümü, K?r?ehir (Turkey); Turgut, Kemal [Yüksek Lisans Ö?rencisi, K?r?ehir (Turkey); Arikan, Nihat [Ahi Evran Üniversitesi E?itim Fakültesi ?lkö?retim Bölümü, K?r?ehir (Turkey); ?yigör, Ahmet; Candan, Abdullah [Ahi Evran Üniversitesi Merkezi Ara?t?rma Laboratuvar?, K?r?ehir (Turkey)

2014-10-06T23:59:59.000Z

347

Reduced lattice temperature high-speed operation of pseudomorphic InGaAdGaAs field-effect transistors  

E-Print Network [OSTI]

,um GaAs buffer, 170 A Ino.zGao,sAs strained channel, 50 A undoped Ale,,,Ga,,,As undoped spacer, S dimensions of 0.25 x 200 pm and 0.5 X 200 pm with a source-drain spacing of 2 ,um. The MODFETs have gate dimensions of 0.35~ 100 pm and 0.47X 100 pm with a source-drain spacing of 1 ,um. The MISFETs have

Kolodzey, James

348

The U.S. Department of Energy is reopening the public scoping period for the Northern Pass Transmission Line Project Environmental Impact Statement (EIS).  

Broader source: Energy.gov [DOE]

The U.S. Department of Energy is reopening the public scoping period for the Northern Pass Transmission Line Project Environmental Impact Statement (EIS).

349

Results of temperature gradient and heat flow in Santiam Pass Area, Oregon, Volume 1  

SciTech Connect (OSTI)

The conclusions of this report are: (1) There is a weakly defined thermal anomaly within the area examined by temperature-gradient holes in the Santiam Pass area. This is a relict anomaly showing differences in permeability between the High Cascades and Western Cascades areas, more than a fundamental difference in shallow crustal temperatures. (2) The anomaly as defined by the 60 F isotherms at 400 feet follows a north-south trend immediately westward of the Cascade axis in the boundary region. It is clear that all holes spudded into High Cascades rocks result in isothermal and reversal gradients. Holes spudded in Western Cascades rocks result in positive gradients. (3) Cold groundwater flow influences and masks temperature gradients in the High Cascades to a depth of at least 700 feet, especially eastward from the major north-south trending faults. Pleistocene and Holocene rocks are very permeable aquifers. (4) Shallow gradient drilling in the lowlands westward of the faults provides more interpretable information than shallow drilling in the cold-water recharge zones. Topographic and climatological effects can be filtered out of the temperature gradient results. (5) The thermal anomaly seems to have 2 centers: one in the Belknap-Foley area, and one northward in the Sand Mountain area. The anomalies may or may not be connected along a north-south trend. (6) A geothermal effect is seen in holes downslope of the Western-High Cascade boundary. Mixing with cold waters is a powerful influence on temperature gradient data. (7) The temperature-gradient program has not yet examined and defined the geothermal resources potential of the area eastward of the Western Cascades-High Cascades boundary. Holes to 1500-2000 feet in depth are required to penetrate the high permeability-cold groundwater regime. (8) Drilling conditions are unfavorable. There are very few accessible level drill sites. Seasonal access problems and environmental restrictions together with frequent lost circulation results in very high costs per foot drilled.

Cox, B.L.; Gardner, M.C.; Koenig, J.B.

1981-08-01T23:59:59.000Z

350

Simulating Blade-Strike on Fish passing through Marine Hydrokinetic Turbines  

SciTech Connect (OSTI)

The study reported here evaluated the occurrence, frequency, and intensity of blade strike of fish on an axial-flow marine hydrokinetic turbine by using two modeling approaches: a conventional kinematic formulation and a proposed Lagrangian particle- based scheme. The kinematic model included simplifying assumptions of fish trajectories such as distribution and velocity. The proposed method overcame the need for such simplifications by integrating the following components into a computational fluid dynamics (CFD) model: (i) advanced eddy-resolving flow simulation, (ii) generation of ambient turbulence based on field data, (iii) moving turbine blades in highly transient flows, and (iv) Lagrangian particles to mimic the potential fish pathways. The test conditions to evaluate the blade-strike probability and fish survival rate were: (i) the turbulent environment, (ii) the fish size, and (iii) the approaching flow velocity. The proposed method offered the ability to produce potential fish trajectories and their interaction with the rotating turbine. Depending upon the scenario, the percentile of particles that registered a collision event ranged from 6% to 19% of the released sample size. Next, by using a set of experimental correlations of the exposure-response of living fish colliding with moving blades, the simulated collision data were used as input variables to estimate the survival rate of fish passing through the operating turbine. The resulting survival rates were greater than 96% in all scenarios, which is comparable to or better than known survival rates for conventional hydropower turbines. The figures of strike probability and mortality rate were amplified by the kinematic model. The proposed method offered the advantage of expanding the evaluation of other mechanisms of stress and injury on fish derived from hydrokinetic turbines and related devices.

Romero Gomez, Pedro DJ; Richmond, Marshall C.

2014-06-16T23:59:59.000Z

351

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate  

E-Print Network [OSTI]

60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

Choi, Woo-Young

352

Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts  

SciTech Connect (OSTI)

A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

2003-07-10T23:59:59.000Z

353

The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers  

E-Print Network [OSTI]

have been operated in GaAs/AlGaAs and InP/InGaAsP mul- tiple quantum well MQW materials showed no evidence of mode-locked operation. Band-edge absorption spectra are also presented which

354

Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells  

SciTech Connect (OSTI)

We have studied the carrier recombination dynamics in an InGaN/GaN multiple quantum well structure as a function of emission energy and excitation density between temperatures of 10?K and 100?K. Under relatively low levels of excitation, the photoluminescence (PL) intensity and decay time of emission on the high energy side of the luminescence spectrum decrease strongly between 10?K and 50?K. In contrast, for emission detected on the low energy side of the spectrum, the PL intensity and decay time increase over the same temperature range. These results are consistent with a thermally activated carrier redistribution process in which the (temperature dependent) average timescale for carrier transfer into or out of a localised state depends on the energy of the given state. Thus, the transfer time out of shallow, weakly localised states is considerably shorter than the arrival time into more deeply localised states. This picture is consistent with carriers hopping between localisation sites in an uncorrelated disorder potential where the density of localised states decreases with increasing localisation depth, e.g., a exponential or Gaussian distribution resulting from random alloy disorder. Under significantly higher levels of excitation, the increased occupation fraction of the localised states results in a greater average separation distance between unoccupied localised states, causing a suppression of the spectral and dynamic signatures of the hopping transfer of carriers.

Badcock, T. J., E-mail: Thomas.badcock@crl.toshiba.co.uk; Dawson, P.; Davies, M. J. [School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kappers, M. J.; Massabuau, F. C.-P.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

2014-03-21T23:59:59.000Z

355

Testing of ethylene propylene seals for the GA-4/GA-9 casks  

SciTech Connect (OSTI)

The primary O-ring seal of the GA-4 and GA-9 casks was tested for leakage with a full-scale mockup of the cask lid and flange. Tests were performed at temperatures of ambient, {minus}41{degrees}, 121{degrees}, and 193{degrees}C. Shim plates between the lid and flange simulated gaps caused by thermal distortion. The testing used a helium mass spectrometer leak detector (MSLD). Results showed that the primary seal was leaktight for all test conditions. Helium permeation through the seal began in 13--23 minutes for the ambient tests and in 1--2 minutes for the tests at elevated temperatures. After each test several hours of the pumping were typically required to reduce the MSLD background reading to an acceptable level for the next test, indicating that the seal had become saturated with helium. To verify that the test results showed permeation and not real leakage, several response checks were conducted in which a calibrated leak source was inserted in the detector line near the seal. When the leak source was activated the detector responded within seconds.

Boonstra, R.H.

1993-08-01T23:59:59.000Z

356

Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment  

SciTech Connect (OSTI)

The influence of alloy clustering on fluctuations in the ground state energy of the two-dimensional electron gas (2DEG) in AlGaN/GaN and InAlN/GaN heterostructures is studied. We show that because of these fluctuations, alloy clustering degrades the mobility even when the 2DEG wavefunction does not penetrate the alloy barrier unlike alloy disorder scattering. A comparison between the results obtained for AlGaN/GaN and InAlN/GaN heterostructures shows that alloy clustering limits the 2DEG mobility to a greater degree in InAlN/GaN heterostructures. Our study also reveals that the inclusion of an AlN interlayer increases the limiting mobility from alloy clustering. Moreover, Atom probe tomography is used to demonstrate the random nature of the fluctuations in the alloy composition.

Ahmadi, Elaheh; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States); Chalabi, Hamidreza [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Kaun, Stephen W.; Shivaraman, Ravi; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

2014-10-07T23:59:59.000Z

357

Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence  

SciTech Connect (OSTI)

Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

Schmidt, Gordon, E-mail: Gordon.Schmidt@ovgu.de; Müller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jürgen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, 39106 Magdeburg (Germany); Glauser, Marlene; Carlin, Jean-François; Cosendey, Gatien; Butté, Raphaël; Grandjean, Nicolas [Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

2014-07-21T23:59:59.000Z

358

Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe  

E-Print Network [OSTI]

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

2009-01-15T23:59:59.000Z

359

Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes  

SciTech Connect (OSTI)

The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

2010-01-15T23:59:59.000Z

360

Maskless lateral epitaxial overgrowth of GaN on sapphire  

SciTech Connect (OSTI)

The authors demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed maskless LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 {micro}m) GaN layer on sapphire is selectively dry etched, leaving {approximately} 5 {micro}m-wide stripe mesas oriented in the <10{bar 1}0>{sub GaN} direction, with a 20 {micro}m period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a T, or overhang, morphology. As for LEO over an SiO{sub 2} mask, significant defect reduction (from {approximately} 10{sup 9} cm{sup {minus}2} to {approximately} 10{sup 6} cm{sup {minus}2}) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle ({approximately} 0.4--0.5{degree}) is relatively independent of growth temperature and wing aspect ratio.

Fini, P.; Marchand, H.; Ibbetson, J.P.; Moran, B.; Zhao, L.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.

1999-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Pulsed laser annealing of Be-implanted GaN  

SciTech Connect (OSTI)

Postimplantation thermal processing of Be in molecular-beam-epitaxy-grown GaN by rapid thermal annealing (RTA) and pulsed laser annealing (PLA) was investigated. It has been found that the activation of Be dopants and the repair of implantation-induced defects in GaN films cannot be achieved efficiently by conventional RTA alone. On the other hand, good dopant activation and surface morphology and quality were obtained when the Be-implanted GaN film was annealed by PLA with a 248 nm KrF excimer laser. However, observations of off-resonant micro-Raman and high-resolution x-ray-diffraction spectra indicated that crystal defects and strain resulting from Be implantation were still existent after PLA, which probably degraded the carrier mobility and limited the activation efficiency to some extent. This can be attributed to the shallow penetration depth of the 248 nm laser in GaN, which only repaired the crystal defects in a thin near-surface layer, while the deeper defects were not annealed out well. This situation was significantly improved when the Be-implanted GaN was subjected to a combined process of PLA followed by RTA, which produced good activation of the dopants, good surface morphology, and repaired bulk and surface defects well.

Wang, H.T.; Tan, L.S.; Chor, E.F. [Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

2005-11-01T23:59:59.000Z

362

NUMBER OF CLINICAL HOURS IN THE NURSING PROGRAMS AND NATIONAL COUNCIL LICENSURE EXAMINATION FOR REGISTERED NURSES (NCLEX-RN) PASSING RATE  

E-Print Network [OSTI]

NUMBER OF CLINICAL HOURS IN THE NURSING PROGRAMS AND NATIONAL COUNCIL LICENSURE EXAMINATION FOR REGISTERED NURSES (NCLEX-RN) PASSING RATE By Tanya Longabach Submitted to the Department of Psychology and Research in Education... of the following thesis: NUMBER OF CLINICAL HOURS IN THE NURSING PROGRAMS AND NATIONAL COUNCIL LICENSURE EXAMINATION FOR REGISTERED NURSES (NCLEX-RN) PASSING RATE ________________________________ Vicki Peyton, Ph. D. Chairperson...

Longabach, Tanya

2012-08-31T23:59:59.000Z

363

The Impact of Carbon Pricing on Wholesale Electricity Prices, Carbon Pass-Through Rates and Retail Electricity Tariffs in Australia.1  

E-Print Network [OSTI]

1 The Impact of Carbon Pricing on Wholesale Electricity Prices, Carbon Pass-Through Rates that the introduction of a carbon price signal will have on wholesale electricity prices, carbon-pass-through rates is used to determine optimal dispatch of generation plant and wholesale prices within the ANEM model. We

Tesfatsion, Leigh

364

Solar-blind deep-UV band-pass filter (250 -350 nm) consisting of a metal nano-grid fabricated  

E-Print Network [OSTI]

Solar-blind deep-UV band-pass filter (250 - 350 nm) consisting of a metal nano-grid fabricated, fabricated and demonstrated a solar-blind deep-UV pass filter, that has a measured optical performance, the filter offers simple yet effective and low cost solar-blind deep-UV detection at either a single device

365

An investigation of passing operations on a rural, two-lane, two-way highway with centerline rumble strips  

E-Print Network [OSTI]

-centers. Pavement markings were striped over the CRSs. iv Data were collected using an innovative data collection system developed by the author through the Texas Transportation Institute (TTI). This system was mounted to a four-door sedan, and it consisted... of four concealed cameras that recorded the entire passing maneuver around the data collection vehicle. Data were collected at three different speeds during the daytime. The speeds were 55, 60, and 65 mph (15, 10, and 5 mph, respectively, under...

Miles, Jeffrey David

2005-02-17T23:59:59.000Z

366

GaAs-based high temperature electrically pumped polariton laser  

SciTech Connect (OSTI)

Strong coupling effects and polariton lasing are observed at 155?K with an edge-emitting GaAs-based microcavity diode with a single Al{sub 0.31}Ga{sub 0.69}As/Al{sub 0.41}Ga{sub 0.59}As quantum well as the emitter. The threshold for polariton lasing is observed at 90?A/cm{sup 2}, accompanied by a reduction of the emission linewidth to 0.85?meV and a blueshift of the emission wavelength by 0.89?meV. Polariton lasing is confirmed by the observation of a polariton population redistribution in momentum space and spatial coherence. Conventional photon lasing is recorded in the same device at higher pump powers.

Baten, Md Zunaid; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu; Frost, Thomas; Deshpande, Saniya; Das, Ayan [Center for Photonic and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Lubyshev, Dimitri; Fastenau, Joel M.; Liu, Amy W. K. [IQE, Inc., 119 Technology Drive, Bethlehem, Pennsylvania 18015 (United States)

2014-06-09T23:59:59.000Z

367

Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design  

SciTech Connect (OSTI)

The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

2000-04-25T23:59:59.000Z

368

Simple intrinsic defects in GaAs : numerical supplement.  

SciTech Connect (OSTI)

This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

Schultz, Peter Andrew

2012-04-01T23:59:59.000Z

369

AlP/GaP distributed Bragg reflectors  

SciTech Connect (OSTI)

Distributed Bragg reflectors with high reflectivity bands centered at wavelengths from 530 to 690 nm (green to red) based on AlP/GaP quarter-wave stacks are prepared on (001)GaP using gas-source molecular-beam epitaxy. Additionally, the complex refractive index of AlP is measured using spectroscopic ellipsometry within the range of 330-850 nm in order to facilitate an accurate reflector design. Structures consisting of 15 quarter-wave stacks reach a peak reflectance between 95% and 98%, depending on the spectral position of the maximum.

Emberger, Valentin; Hatami, Fariba; Ted Masselink, W. [Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15, D-12489 Berlin (Germany); Peters, Sven [Sentech Instruments GmbH, Schwarzschildstr. 2, 12489 Berlin (Germany)

2013-07-15T23:59:59.000Z

370

Graphene/GaN diodes for ultraviolet and visible photodetectors  

SciTech Connect (OSTI)

The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

2014-08-18T23:59:59.000Z

371

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions  

E-Print Network [OSTI]

We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity ...

Hisaka, Takayuki

372

Electric field engineering in GaN high electron mobility transistors  

E-Print Network [OSTI]

In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

Zhao, Xu, S.M. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

373

Site-controlled fabrication of Ga nanodroplets by focused ion beam  

SciTech Connect (OSTI)

Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

Xu, Xingliang; Wang, Zhiming M., E-mail: zhmwang@gmail.com [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Wu, Jiang; Li, Handong; Zhou, Zhihua [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Wang, Xiaodong [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

2014-03-31T23:59:59.000Z

374

Device-level thermal analysis of GaN-based electronics  

E-Print Network [OSTI]

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

Bagnall, Kevin Robert

2013-01-01T23:59:59.000Z

375

Light extraction in individual GaN nanowires on Si for LEDs  

E-Print Network [OSTI]

GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

Zhou, Xiang

376

High performance double pulse doped pseudomorphic AlGaAs/InGaAs transistors grown by molecular-beam epitaxy  

SciTech Connect (OSTI)

Double pulse doped AlGaAs/InGaAs pseudomorphic high electron mobility transistors have been grown by molecular-beam epitaxy on GaAs substrates. Hall mobilities in excess of 7100 cm{sup 2}/V s at 300 K and 25000 cm{sup 2}/V s at 77 K are obtained with a sheet density of 3 x 10{sup 12} cm{sup {minus}2}. Photoluminescence measurements indicate that two electronic subbands are occupied, and the subband energies are determined. The doping pulses are resolved in secondary ion mass spectrometry measurements. Using a double recess process, transistors have been fabricated that have produced state of the art microwave performance. At 10 GHz a 1.2 mm device has simultaneously achieved a power added efficiency of 70%, output power of 0.97 W, and gain of 10 dB. 17 refs., 5 figs., 1 tab.

Hoke, W.E.; Lyman, P.S.; Labossier, W.H.; Brierley, S.K.; Hendriks, H.T.; Shanfield, S.R.; Aucoin, L.M.; Kazior, T.E. [Raytheon Research Division, Lexington, MA (United States)] [Raytheon Research Division, Lexington, MA (United States)

1992-05-01T23:59:59.000Z

377

Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures  

SciTech Connect (OSTI)

We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko [Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan); Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel [National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101 (Philippines); Garcia, Alipio [Department of Physical Sciences, University of the Philippines, Baguio City 2600 (Philippines)

2009-06-08T23:59:59.000Z

378

High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration  

SciTech Connect (OSTI)

We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

Young, N. G., E-mail: ngyoung@engineering.ucsb.edu; Farrell, R. M.; Iza, M.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Perl, E. E.; Keller, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Bowers, J. E.; Nakamura, S.; DenBaars, S. P. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

2014-04-21T23:59:59.000Z

379

Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence  

SciTech Connect (OSTI)

We present an investigation of the degradation of InGaN/GaN laser diodes grown on a GaN substrate. The results indicate that: (i) Ageing induces a significant increase in the threshold current (Ith) of the lasers, which is attributed to an increase in non-radiative recombination; (ii) Ith increase is correlated to a decrease in the micro-cathodoluminescence signal measured (after the removal of the top metallization) in the region under the ridge; (iii) micro-photoluminescence measurements indicate that constant current stress increases non-radiative recombination within the quantum wells (and not only within the barriers), and induces an increase in the emission wavelength of the degraded region.

Meneghini, M., E-mail: matteo.meneghini@dei.unipd.it; Carraro, S.; Meneghesso, G.; Trivellin, N.; Zanoni, E. [Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy)] [Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy); Mura, G. [University of Cagliari, Piazza d'Armi, 09123 Cagliari (Italy)] [University of Cagliari, Piazza d'Armi, 09123 Cagliari (Italy); Rossi, F.; Salviati, G. [IMEM-National Council of Research, Parco Area delle Scienze 37/A, 43124 Parma (Italy)] [IMEM-National Council of Research, Parco Area delle Scienze 37/A, 43124 Parma (Italy); Holc, K.; Weig, T.; Wagner, J. [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany)] [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany); Schade, L.; Karunakaran, M. A. [IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany)] [IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany); Schwarz, U. T. [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany) [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany); IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany)

2013-12-02T23:59:59.000Z

380

Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells  

SciTech Connect (OSTI)

We demonstrate THz intersubband absorption (15.6–26.1?meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14?meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a??40% reduction in the linewidth (from roughly 8 to 5?meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

Edmunds, C.; Malis, O., E-mail: omalis@purdue.edu [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Shao, J. [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Shirazi-HD, M. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, M. J. [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

2014-07-14T23:59:59.000Z

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes  

SciTech Connect (OSTI)

The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3?nm–6?nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200?A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelength we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.

Zhou, Kun; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Liu, Jianping, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Zhang, Shuming; Li, Deyao; Zhang, Liqun; Yang, Hui [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Cai, Jin; Wang, Hui; Wang, H. B. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Suzhou Nanojoin Photonics Co., Ltd., Suzhou (China)

2014-10-27T23:59:59.000Z

382

Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer  

SciTech Connect (OSTI)

We report a first principles theoretical investigation of spin polarized quantum transport in Mn{sub 2}Ga/MgO/Mn{sub 2}Ga and Mn{sub 3}Ga/MgO/Mn{sub 3}Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn{sub 2}Ga-based MTJs, however, only a 5% TMR ratio for Mn{sub 3}Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn{sub 2}Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn{sub 2}Ga/MgO/Mn{sub 2}Ga MTJ can be improved by inserting Co layer.

Liang, S. H.; Tao, L. L.; Liu, D. P., E-mail: dpliu@iphy.ac.cn; Han, X. F., E-mail: xfhan@iphy.ac.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu, Y. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Université, BP 239, 54506 Vandoeuvre (France)

2014-04-07T23:59:59.000Z

383

Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system.  

SciTech Connect (OSTI)

We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a unique flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected two-dimensional (2D)-2D tunneling results, we have found additional tunneling features that are related to the one-dimensional quantum wires.

Seamons, John Andrew; Lilly, Michael Patrick; Reno, John Louis; Bielejec, Edward Salvador

2004-11-01T23:59:59.000Z

384

1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m?{center_dot}cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW{center_dot}cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

Zhu, Mingda [University of Notre Dame, IN (United States); Song, Bo [Cornell University, Ithaca, NY (United States); Qi, Meng [University of Notre Dame, IN (United States); Hu, Zongyang [University of Notre Dame, IN (United States); Nomoto, Kazuki [University of Notre Dame, IN (United States); Yan, Xiaodong [University of Notre Dame, IN (United States); Cao, Yu [IQE/HRL Labs; Johnson, Wayne [IQE, Westborough, MA (United States); Kohn, Erhard [University of Notre Dame, IN (United States); Jena, Debdeep [Cornell University, Ithaca, NY (United States); Xing, Grace Huili [Cornell University, Ithaca, NY (United States)

2015-04-01T23:59:59.000Z

385

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a  

E-Print Network [OSTI]

Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a , Guohua Li b , Jerry MP photodiodes fabricated on GaP substrate with unique drift dominated design, which can build an electric field throughout the active region by varying the doping concentration. The InP/GaP photodiodes have been grown

Woodall, Jerry M.

386

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS  

E-Print Network [OSTI]

DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

Sites, James R.

387

Hexagonal Growth Spirals on GaN Grown by Molecular Beam Epitaxy: Kinetics vs Thermodynamics  

E-Print Network [OSTI]

prepared, Ga-polar GaN(0001) templates. The surface morphology was studied using reflection high-energy-edge energy of 0.26 eV/Ã?. They suggest that local conditions at step edges dominate the growth. 1 conducted ex situ using AFM. Desorption mass spectrometry (DMS) was used to measure the GaN growth rate. Our

Cohen, Philip I.

388

Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a  

E-Print Network [OSTI]

is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

Okamoto, Koichi

389

TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron  

E-Print Network [OSTI]

neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

390

Free carrier induced spectral shift for GaAs filled metallic hole arrays  

E-Print Network [OSTI]

. Soref, and J. A. D. Alamo, "Carrier-induced change in refractive index of InP, GaAs, and InGaAsP," IEEE-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave

New Mexico, University of

391

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy  

E-Print Network [OSTI]

Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy A. J. Ptak, L. J-assisted molecular-beam epitaxy to study the dependence of oxygen incorporation on polarity and oxygen partial pressure. Oxygen incorporates at a rate ten times faster on nitrogen-polar GaN than on the Ga polarity

Myers, Tom

392

Properties of H, O and C in GaN  

SciTech Connect (OSTI)

The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

Pearton, S.J.; Abernathy, C.R.; Lee, J.W. [Univ. of Florida, Gainesville, FL (United States)] [and others

1996-04-01T23:59:59.000Z

393

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical  

E-Print Network [OSTI]

1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical Higher Education: An XP Report. Epema, An Experience Report on Using Gamification in Technical Higher Education, ACM SIGCSE'14. http's not you, it's me · New ambition of GamificationU (Top-20 Eng/Tech*) ·

Iosup, Alexandru

394

Ohmic contacts to p-type GaP  

E-Print Network [OSTI]

thickness used in this scheme. The samples were annealed for I @n at temperatures ranging from 3 5 0 to 4 5 0 'C. Lower values of the contact resistivity than those of the Si/Pd/Zn/Pd/p-GaP scheme were achieved by depositing an Aluminum layer on the top...

Jorge Estevez, Humberto Angel

1996-01-01T23:59:59.000Z

395

Gallium Arsenide (GaAs) EDWARD D. PALIK  

E-Print Network [OSTI]

constants of pure (semi-insulating) GaAs are derived from a number of papers including the far-infrared at. [4]; the near-IR work of Pikhtin and Yas'kov [5]; the calorim- etry work of Christensen et al. [6 reflection work of Philipp and Ehrenreich [9]; and the synchrotron transmission work of Cardona et al. [10

Pulfrey, David L.

396

Theory of weak localization in ferromagnetic (Ga,Mn)As  

E-Print Network [OSTI]

We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence-band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find that at Mn...

Garate, Ion; Sinova, Jairo; Jungwirth, T.; MacDonald, A. H.

2009-01-01T23:59:59.000Z

397

Response of GaAs to fast intense laser pulses  

E-Print Network [OSTI]

Motivated by recent experiments, we have performed simulations which show in detail how the electrons and ions in GaAs respond to fast intense laser pulses (with durations of order 100 fs and intensities of order 1-10 TW/cm(2)). The method of tight...

Graves, JS; Allen, Roland E.

1998-01-01T23:59:59.000Z

398

Recombination in Low-Bandgap InGaAs  

SciTech Connect (OSTI)

We review our investigation of recombination in In{sub x}Ga{sub 1-x}As with indium concentrations ranging between x=0.53 (i.e., lattice-matched to InP) and x=0.78. External radiative efficiency measurements were used to study how defect-related and Auger mechanisms compete with radiative recombination. The results indicated that deep mid-gap levels facilitate defect-related recombination in lattice-matched InGaAs while shallower levels play a more important role in the indium-rich alloys. Subsequent sub-bandgap photoluminescence measurements confirmed the presence of deep levels in the lattice-matched InGaAs. The superlinear excitation dependence of the sub-gap emission led to a defect-related deep-donor/shallow-acceptor pair model. Recent cathodoluminescence measurements of the subgap transitions show no spatial contrast, supporting the assignment of this mechanism to evenly distributed point defects. We hypothesize that the deep states observed in lattice-matched InGaAs are related to imperfections in the incorporation of indium or gallium, which become less likely as the indium concentration is increased.

Gfroerer, T. H.; Wanlass, M. W.

2006-01-01T23:59:59.000Z

399

Ballistic thermal point contacts made of GaAs nanopillars  

SciTech Connect (OSTI)

We measure the thermal conductance of GaAs pillars that are only a few nanometers long. Our observations can be understood with a simple model, in which the pillars constitute thermal point contacts between 3D phonon reservoirs. Moreover, first measurements of the electronic transport through these pillars are presented.

Bartsch, Th.; Wetzel, A.; Sonnenberg, D.; Schmidt, M.; Heyn, Ch.; Hansen, W. [Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Jungiusstr. 11, 20355 Hamburg (Germany)

2013-12-04T23:59:59.000Z

400

GA Tech Campus Emergency Response Team STANDARD OPERATING PROCEDURE  

E-Print Network [OSTI]

GA Tech Campus Emergency Response Team GT-CERT STANDARD OPERATING PROCEDURE 09/29/2010 #12;2 Table as a condition for the appointment and continuing maintenance of membership. GT-CERT members operate for and to respond to emergency/disaster situations. 2.0 Purpose To establish procedures for the activation

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

High-quality InP on GaAs  

E-Print Network [OSTI]

In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

Quitoriano, Nathaniel Joseph

2006-01-01T23:59:59.000Z

402

Substrate-dependent wetting layer formation during GaN growth: Impact on the morphology of the films  

SciTech Connect (OSTI)

We have compared epitaxial growth of GaN films on 6H-SiC(0001)-({radical}(3)x{radical}(3))R30 deg. -Ga and on (0001)-sapphire. Predeposited Ga layers were nitrided by ion beam assisted molecular beam epitaxy. Whereas on SiC the initially deposited Ga covers the substrate surface completely, on sapphire only Ga droplets are present. The different distribution of the predeposited Ga affects the morphology of GaN significantly. Scanning electron microscopy and atomic force microscopy analysis of the grown films show that the complete wetting of the SiC substrate with Ga enhances finally the size and the flatness of GaN terraces and thus the quality of the film. X-ray photoelectron spectroscopy measurements reveal that metallic Ga resides also on top of the GaN films during the growth.

Sidorenko, A.; Peisert, H.; Neumann, H.; Chasse, T. [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany); Leibniz-Institut fuer Oberflaechenmodifizierung e.V. Permoserstrasse 15, D-04318 Leipzig (Germany); Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany)

2007-08-15T23:59:59.000Z

403

Tomotherapy treatment plan quality assurance: The impact of applied criteria on passing rate in gamma index method  

SciTech Connect (OSTI)

Purpose: Pretreatment patient plan verification with gamma index (GI) metric analysis is standard procedure for intensity modulated radiation therapy (IMRT) treatment. The aim of this paper is to evaluate the variability of the local and global gamma index obtained during standard pretreatment quality assurance (QA) measurements for plans performed with Tomotherapy unit. The QA measurements were performed with a 3D diode array, using variable passing criteria: 3%/3 mm, 2%/2 mm, 1%/1 mm, each with both local and global normalization.Methods: The authors analyzed the pretreatment QA results for 73 verifications; 37 were prostate cancer plans, 16 were head and neck plans, and 20 were other clinical sites. All plans were treated using the Tomotherapy Hi-Art System. Pretreatment QA plans were performed with the commercially available 3D diode array ArcCHECK™. This device has 1386 diodes arranged in a helical geometry spaced 1 cm apart. The dose measurements were acquired on the ArcCHECK™ and then compared with the calculated dose using the standard gamma analysis method. The gamma passing rate (%GP), defined as the percentage of points satisfying the condition GI < 1, was calculated for different criteria (3%/3 mm, 2%/2 mm, 1%/1 mm) and for both global and local normalization. In the case of local normalization method, the authors set three dose difference threshold (DDT) values of 2, 3, and 5 cGy. Dose difference threshold is defined as the minimum absolute dose error considered in the analysis when using local normalization. Low-dose thresholds (TH) of 5% and 10% were also applied and analyzed.Results: Performing a paired-t-test, the authors determined that the gamma passing rate is independent of the threshold values for all of the adopted criteria (5%TH vs 10%TH, p > 0.1). Our findings showed that mean %GPs for local (or global) normalization for the entire study group were 93% (98%), 84% (92%), and 66% (61%) for 3%/3 mm, 2%/2 mm, and 1%/1 mm criteria, respectively. DDT was equal to 2 cGy for the local normalization analysis cases. The authors observed great variability in the resulting %GP. With 3%/3 mm gamma criteria, the overall passing rate with local normalization was 4.6% less on the average than with global one, as expected. The wide difference between %GP calculated with global or local approach is also confirmed by an unpaired t-test statistical analysis.Conclusions: The variability of %GP obtained confirmed the necessity to establish defined agreement criteria that could be universal and comparable between institutions. In particular, while the gamma passing rate does not depend on the choice of threshold, the choice of DDT strongly influences the gamma passing rate for local calculations. The difference between global and local %GP was statistically significant for prostate and other treatment sites when DDT was changed from 2 to 3 cGy.

Bresciani, Sara; Di Dia, Amalia; Maggio, Angelo; Cutaia, Claudia; Miranti, Anna; Infusino, Erminia; Stasi, Michele [Medical Physics Division, Institute for Cancer Research and Treatment (IRCCS), 10060 Candiolo (Italy)] [Medical Physics Division, Institute for Cancer Research and Treatment (IRCCS), 10060 Candiolo (Italy)

2013-12-15T23:59:59.000Z

404

Determination of subband energies and 2DEG characteristics of Al{sub x}Ga{sub 1?x}N/GaN heterojunctions using variational method  

SciTech Connect (OSTI)

A physics-based model based on the variational method for analyzing the two dimensional electron gas (2DEG) characteristics of polar AlGaN/GaN heterojunctions is developed. The 2DEG carrier concentration, the first and second energy subbands, and the position of the Fermi energy level are calculated for various barrier thicknesses, Al mole fractions, background dopant concentrations, and gate voltages for gated AlGaN/GaN heterojunctions. The results are in good agreement with the data reported based on self-consistent method. Whereas the aforementioned report has dealt with specific values of Al mole fraction, barrier thickness, and unintentional doping level, the present work provides a basis for calculating the 2DEG characteristics for the full range of these parameters. Furthermore, according to the proposed model, the applicability of the triangular approximation of the quantum well in AlGaN/GaN heterojunctions is evaluated.

Manouchehri, Farzin; Valizadeh, Pouya; Kabir, M. Z., E-mail: kabir@encs.concordia.ca [Department of Electrical and Computer Engineering, Concordia University, Montreal, H3G 1M8 (Canada)

2014-03-15T23:59:59.000Z

405

Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor  

SciTech Connect (OSTI)

An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup ?14} to 10{sup ?8} M and a detection limit below 10{sup ?14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

Cheng, Junjie [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China); Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Li, Jiadong; Miao, Bin; Wu, Dongmin, E-mail: dmwu2008@sinano.ac.cn [i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wang, Jine; Pei, Renjun, E-mail: rjpei2011@sinano.ac.cn [Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wu, Zhengyan, E-mail: zywu@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China)

2014-08-25T23:59:59.000Z

406

Quaternary InGaAsSb Thermophotovoltaic Diodes  

SciTech Connect (OSTI)

In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

2006-03-09T23:59:59.000Z

407

Engineering properties of shallow sediments in West Delta and South Pass Outer Continental Shelf Lease Areas, offshore Louisiana  

E-Print Network [OSTI]

ENGINEERING PROPERTIES OF SHALLOW SEDIMENTS IN WEST DELTA AND SOUTH PASS OUTER CONTINENTAL SHELF LEASE AREAS& OFFSHORE LOUISIANA A Thesis by STERLING J. HELWICK, JR. Submitted to the Graduate College of Texas A&M University in partial... by STERLING J. HELWICK, JR. Approved as to style and content by: (Chairman of C mmit e) (Head of Depart t) Member / gg&wrt r~ Fc' Qg~s/~ (Member) ( her) May 1977 44", 672 ABSTRACT Engineering Properties of Shallow Sediments in West Delta and South...

Helwick, Sterling J

1977-01-01T23:59:59.000Z

408

Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells  

SciTech Connect (OSTI)

The light enhancement phenomena in InGaN/GaN multi-quantum wells (MQWs) infiltrated with metal nanoparticles (NPs) are studied using resonant and off-resonant localized plasmon interactions. The emission and recombination characteristics of carriers in InGaN/GaN MQW structures with inverted hexagonal pits (IHPs) are modified distinctly depending on the nature of their interaction with the metal NPs and with the pumping and emitted photons. It is observed that the emission intensity of light is significantly enhanced when the emission energy is off-resonant to the localized plasmon frequency of the metal nanoparticles. This results in enhanced emission from MQW due to Au nanoparticles and from IHPs due to Ag nanoparticles. At resonant-plasmon frequency of the Ag NPs, the emission from MQWs is quenched due to the re-absorption of the emitted photons, or due to the drift carriers from c-plane MQWs towards the NPs because of the Coulomb forces induced by the image charge effect.

Lin, Jie; Llopis, Antonio; Krokhin, Arkadii; Neogi, Arup, E-mail: arup@unt.edu [Department of Physics, University of North Texas, Denton, Texas 76203 (United States); Pereira, Sergio [CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Watson, Ian M. [SUPA, Institute of Photonics, University of Strathclyde, Glasgow (United Kingdom)

2014-06-16T23:59:59.000Z

409

Projected Performance of Three- and Four-Junction Devices Using GaAs and GaInP  

E-Print Network [OSTI]

This paper explores the efficiencies expected for three- and four-junction devices for both space and terrestrial applications. For space applications, the effects of temperature and low concentration are investigated. For terrestrial applications, a concentration of 500 suns is assumed and the theoretical efficiencies are calculated as a function of spectral variations including the effects of air mass, turbidity, and water-vapor content. INTRODUCTION Ga 0.5 In 0.5 P/GaAs two-terminal, two-junction solar cells, invented and developed at the National Renewable Energy Laboratory, are in production at both TECSTAR and Spectrolab. The immediate market for these devices is in space; a future (potentially larger) market is terrestrial concentrator systems. The next-generation cells will add additional junction(s) in order to increase the efficiency. Work on a three-junction cell using an active Ge junction under the Ga 0.5 In 0.5 P/GaAs dual-junction cell has already been reported [1]. Ho...

Gainp; S. R. Kurtz; Sarah R. Kurtz; D. Myers; D. Myers; J.M. Olson; J. M. Olson

1997-01-01T23:59:59.000Z

410

Electrical, thermal, and species transport properties of liquid eutectic Ga-In and Ga-In-Sn from first principles  

SciTech Connect (OSTI)

Using ab initio molecular dynamics, the atomic structure and transport properties of eutectic Ga-In and Ga-In-Sn are investigated. The Kubo-Greenwood (K-G) and the Ziman-Faber (Z-F) formulations and the Wiedemann-Franz (W-F) law are used for the electrical and electronic thermal conductivity. The species diffusivity and the viscosity are also predicted using the mean square displacement and the Stokes-Einstein (S-E) relation. Alloying Ga causes more disordered structure, i.e., broadening the atomic distance near the In and Sn atoms, which reduces the transport properties and the melting temperature. The K-G treatment shows excellent agreement with the experimental results while Z-F treatment formula slightly overestimates the electrical conductivity. The predicted thermal conductivity also shows good agreement with the experiments. The species diffusivity and the viscosity are slightly reduced by the alloying of Ga with In and Sn atoms. Good agreements are found with available experimental results and new predicted transport-property results are provided.

Yu, Seungho; Kaviany, Massoud, E-mail: kaviany@umich.edu [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)] [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)

2014-02-14T23:59:59.000Z

411

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors  

SciTech Connect (OSTI)

The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

2013-01-01T23:59:59.000Z

412

Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure  

SciTech Connect (OSTI)

In order to characterize magnetic field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the magnetoplasmon resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.

Bia?ek, M., E-mail: marcin.bialek@fuw.edu.pl; Witowski, A. M.; Grynberg, M.; ?usakowski, J. [Faculty of Physics, University of Warsaw, ul. Ho?a 69, 00-681 Warsaw (Poland); Orlita, M.; Potemski, M. [Laboratoire National des Champs Magnetiques Intenses, CNRS-UJF-UPS-INSA, 25, avenue des Martyrs, 38042 Grenoble (France); Czapkiewicz, M. [Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw (Poland); Wróbel, J. [Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw (Poland); Faculty of Mathematics and Natural Sciences, Rzeszów University, al. Rejtana 16A, 35-959 Rzeszów (Poland); Umansky, V. [Weizmann Institute of Science, Rehevot 76100 (Israel)

2014-06-07T23:59:59.000Z

413

Ultra High p-doping Material Research for GaN Based Light Emitters  

SciTech Connect (OSTI)

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

Vladimir Dmitriev

2007-06-30T23:59:59.000Z

414

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate  

SciTech Connect (OSTI)

The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical measurements, a gradual decrease of two-dimensional electron gas (2DEG) concentration near heterointerface as the function of NL thickness is observed possibly due to the reduction in difference of piezoelectric polarization charge densities between AlGaN and GaN layers. It also indicates that the minimum tensile stress and a relatively less total dislocation density for high pressure grown NL can ensure a 20 % increment in mobility at room temperature irrespective of the interface roughness. The thickness and pressure variations in NL and the subsequent changes in growth mode of AlN contributing to the post growth residual tensile stress are investigated using X-ray diffraction and Raman scattering experiments, respectively. The post growth intrinsic residual stress in top layers of heterostructures arises from lattice mismatches, NL parameters and defect densities in GaN. Hence, efforts to reduce the intrinsic residual stress in current conducting GaN layer give an opportunity to further improve the electrical characteristics of AlGaN/GaN device structures on Si.

Christy, Dennis; Watanabe, Arata; Egawa, Takashi [Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya, 466-8555 (Japan)

2014-10-15T23:59:59.000Z

415

Artal et al. Vol. 12, No. 2/February 1995/J. Opt. Soc. Am. A 195 Odd aberrations and double-pass  

E-Print Network [OSTI]

-pass measurements of retinal image quality Pablo Artal Laboratorio de Optica, Departamento de F´isica, Universidad Optica, Consejo Superior de Investigaciones Cient´ificas, Serrano 121, 28006 Madrid, Spain David R

Williams, David

416

GaAsSb-based heterojunction tunnel diodes for tandem solar cell interconnects  

SciTech Connect (OSTI)

We report a new approach to tunnel junctions that employs a pseudomorphic GaAsSb layer to obtain a band alignment at a InGaAs or InAlAs p-n junction favorable for forward bias tunneling. Since the majority of the band offset between GaAsSb and InGaAs or InAlAs is in the valence band, when an GaAsSb layer is placed at an InGaAs or InAlAs p-n junction the tunneling distance is reduced and the tunneling current is increased. For all doping levels studied, the presence of the GaAsSb-layer enhanced the forward tunneling characteristics. In fact, in a InGaAs/GaAsSb tunnel diode a peak tunneling current sufficient for a 1000 sun intercell interconnect was achieved with p = 1.5{times}l0{sup 18} cm{sup -3} while a similarly doped all-InGaAs diode was rectifying. This approach affords a new degree of freedom in designing tunnel junctions for tandem solar cell interconnects. Previously only doping levels could be varied to control the tunneling properties. Our approach relaxes the doping requirements by employing a GaAsSb-based heterojunction.

Zolper, J.C.; Klem, J.F.; Plut, T.A.; Tigges, C.P.

1995-01-01T23:59:59.000Z

417

A 0.45NW, 0.5V, 59-DB DR, Gm-C LOW-PASS FILTER FOR PORTABLE ECG RECORDING  

E-Print Network [OSTI]

A 0.45NW, 0.5V, 59-DB DR, Gm-C LOW-PASS FILTER FOR PORTABLE ECG RECORDING Chutham Sawigun, Senad. Abstract: This paper presents the design of a sub-threshold CMOS G,,,-C low-pass filter in a portable ECG.23Vpp. 1 INTRODUCTION As a consequence of the heart activity, electrocardiograms (ECGs) can be recorded

Serdijn, Wouter A.

418

Procedure for Computing Residual Stresses from Neutron Diffraction Data and its Application to Multi-Pass Dissimilar Weld  

SciTech Connect (OSTI)

Neutron diffraction is a powerful tool for non-destructive measurement of internal residual stresses of welded structures. The conventional approach for determination of residual stresses requires the knowledge of stress-free lattice spacing a priori. For multiple-pass dissimilar metal welds common to nuclear reactor pipeline systems, the stress-free lattice parameter is a complex function of position due to the chemistry inhomogeneity in the weld region and can be challenging to determine experimentally. This paper presents a new approach to calculate the residual stress field in dissimilar welds without the use of stress-free lattice parameter. The theoretical basis takes advantage of the fact that the normal component of welding residual stresses is typically small for thin plate or pipe welds. The applicability of the new approach is examined and justified in a multi-pass dissimilar metal weld consisting of a stainless steel plate and a nickel alloy filler metal. The level of uncertainties associated with this new approach is assessed. Neutron diffraction experiment is carried out to measure the lattice spacing at various locations in the dissimilar weld. A comb-shaped specimen, electro-discharge machined from a companion weld, is used to determine the stress-free lattice spacing. The calculated results from the new approach are consistent with those from the conventional approach. The new approach is found to be a practical method for determining the two in-plane residual stress components in thin plate or pipe dissimilar metal welds.

Zhang, Wei [ORNL; Feng, Zhili [ORNL; Crooker, Paul [Electric Power Research Institute (EPRI)

2011-01-01T23:59:59.000Z

419

The development and performance of a message-passing version of the PAGOSA shock-wave physics code  

SciTech Connect (OSTI)

A message-passing version of the PAGOSA shock-wave physics code has been developed at Sandia National Laboratories for multiple-instruction, multiple-data stream (MIMD) computers. PAGOSA is an explicit, Eulerian code for modeling the three-dimensional, high-speed hydrodynamic flow of fluids and the dynamic deformation of solids under high rates of strain. It was originally developed at Los Alamos National Laboratory for the single-instruction, multiple-data (SIMD) Connection Machine parallel computers. The performance of Sandia`s message-passing version of PAGOSA has been measured on two MIMD machines, the nCUBE 2 and the Intel Paragon XP/S. No special efforts were made to optimize the code for either machine. The measured scaled speedup (computational time for a single computational node divided by the computational time per node for fixed computational load) and grind time (computational time per cell per time step) show that the MIMD PAGOSA code scales linearly with the number of computational nodes used on a variety of problems, including the simulation of shaped-charge jets perforating an oil well casing. Scaled parallel efficiencies for MIMD PAGOSA are greater than 0.70 when the available memory per node is filled (or nearly filled) on hundreds to a thousand or more computational nodes on these two machines, indicating that the code scales very well. Thus good parallel performance can be achieved for complex and realistic applications when they are first implemented on MIMD parallel computers.

Gardner, D.R.; Vaughan, C.T.

1997-10-01T23:59:59.000Z

420

Bending properties of epoxy resin matrix composites filled with NiMnGa ferromagnetic shape memory alloy powders  

E-Print Network [OSTI]

Bending properties of epoxy resin matrix composites filled with Ni­Mn­Ga ferromagnetic shape memory­Mn­Ga Composite materials Mechanical properties Microstructure Two types of epoxy resin matrix composites filled­Mn­Ga epoxy resin composites were reported, yet the bending property of Ni­Mn­Ga-polymer smart composites has

Zheng, Yufeng

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS  

E-Print Network [OSTI]

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

Atwater, Harry

422

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density  

E-Print Network [OSTI]

Metal-insulator-semiconductor structures on p-type GaAs with low interface state density Zhi Chen properties of in situ deposited Si3N4 /Si/p-GaAs metal-insulator-semiconductor structures have been offered by a low gate leakage technology in GaAs, such as metal insulator structures, func- tional Ga

Chen, Zhi

423

Method of plasma etching Ga-based compound semiconductors  

DOE Patents [OSTI]

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

Qiu, Weibin; Goddard, Lynford L.

2012-12-25T23:59:59.000Z

424

Method of plasma etching GA-based compound semiconductors  

DOE Patents [OSTI]

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

Qiu, Weibin; Goddard, Lynford L.

2013-01-01T23:59:59.000Z

425

Study of reflection and transport in the microwave photo-excited GaAs/AlGaAs two dimensional electron system  

SciTech Connect (OSTI)

We present the results of a concurrent experimental study of microwave reflection and transport in the GaAs/AlGaAs two dimensional electron gas system and correlate observed features in the reflection with the observed transport features. The experimental results are compared with expectations based on theory.

Ye, Tianyu; Mani, Ramesh G. [Department of Physics and Astronomy, Georgia State University, Atlanta GA 30303 (United States); Wegscheider, Werner [Laboratorium für Festkörperphysik, ETH Zürich, 8093 Zürich (Switzerland)

2013-12-04T23:59:59.000Z

426

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a  

E-Print Network [OSTI]

GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C Richard R. King,2 and Harry A. Atwater1 1 California Institute of Technology, Pasadena, California 91125, USA 2 Spectrolab, Inc., Sylmar, California 91342, USA 3 Aonex Technologies, Pasadena, California 91106

Atwater, Harry

427

FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS  

E-Print Network [OSTI]

FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS Robyn C. Law 1 1 Spectrolab, Inc., A Boeing Company, Sylmar, California 91342, USA 2 California Institute of Technology, Pasadena, California 91125, USA ABSTRACT Spectrolab has demonstrated the first lattice matched In

Atwater, Harry

428

Ga lithography in sputtered niobium for superconductive micro and nanowires  

SciTech Connect (OSTI)

This work demonstrates the use of focused ion beam (FIB) implanted Ga as a lithographic mask for plasma etching of Nb films. Using a highly collimated Ga beam of a FIB, Nb is implanted 12?nm deep with a 14?nm thick Ga layer providing etch selectivity better than 15:1 with fluorine based etch chemistry. Implanted square test patterns, both 10??m by 10??m and 100??m by 100??m, demonstrate that doses above than 7.5?×?10{sup 15?}cm{sup ?2} at 30?kV provide adequate mask protection for a 205?nm thick, sputtered Nb film. The resolution of this dry lithographic technique is demonstrated by fabrication of nanowires 75?nm wide by 10??m long connected to 50??m wide contact pads. The residual resistance ratio of patterned Nb films was 3. The superconducting transition temperature (T{sub c})?=?7.7?K was measured using a magnetic properties measurement system. This nanoscale, dry lithographic technique was extended to sputtered TiN and Ta here and could be used on other fluorine etched superconductors such as NbN, NbSi, and NbTi.

Henry, M. David; Wolfley, Steve; Monson, Todd; Lewis, Rupert [Sandia National Labs, MESA Facility, P.O. Box 5800, Albuquerque, New Mexico 87185-1084 (United States)

2014-08-18T23:59:59.000Z

429

InGaAsSb thermophotovoltaic diode physics evaluation  

SciTech Connect (OSTI)

The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1,000 C, which sets an upper limit on the TPV diode bandgap of 0.6 eV from efficiency and power density considerations. This bandgap requirement has necessitated the development of new diode material systems, never previously considered for energy generation. To date, InGaAsSb quaternary diodes grown lattice-matched on GaSb substrates have achieved the highest performance. This report relates observed diode performance to electro-optic properties such as minority carrier lifetime, diffusion length and mobility and provides initial links to microstructural properties. This analysis has bounded potential diode performance improvements. For the 0.52 eV InGaAsSb diodes used in this analysis the measured dark current is 2 {times} 10{sup {minus}5} A/cm{sup 2}, versus a potential Auger limit 1 {times} 10{sup {minus}5} A/cm{sup 2}, a radiative limit of 2 {times} 10{sup {minus}6} A/cm{sup 2} (no photon recycling), and an absolute thermodynamic limit of 1.4 {times} 10{sup {minus}7} A/cm{sup 2}. These dark currents are equivalent to open circuit voltage gains of 20 mV (7%), 60 mV (20%) and 140 mV (45%), respectively.

Charache, G.W.; Baldasaro, P.F.; Danielson, L.R. [Lockheed-Martin, Inc., Schenectady, NY (United States)] [and others

1998-06-01T23:59:59.000Z

430

GaSb substrates with extended IR wavelength for advanced space based applications  

SciTech Connect (OSTI)

GaSb substrates have advantages that make them attractive for implementation of a wide range of infrared (IR) detectors with higher operating temperatures for stealth and space based applications. A significant aspect that would enable widespread commercial application of GaSb wafers for very long wavelength IR (VLWIR) applications is the capability for transmissivity beyond 15 m. Due largely to the GaSb (antisite) defect and other point defects in undoped GaSb substrates, intrinsic GaSb is still slightly p-type and strongly absorbs in the VLWIR. This requires backside thinning of the GaSb substrate for IR transmissivity. An extremely low n-type GaSb substrate is preferred to eliminate thinning and provide a substrate solution for backside illuminated VLWIR devices. By providing a more homogeneous radial distribution of the melt solute to suppress GaSb formation and controlling the cooling rate, ultra low doped n:GaSb has been achieved. This study examines the surface properties and IR transmission spectra of ultra low doped GaSb substrates at both room and low temperatures. Atomic force microscopy (AFM), homoepitaxy by MBE, and infrared Fourier transform (FTIR) analysis was implemented to examine material quality. As compared with standard low doped GaSb, the ultra low doped substrates show over 50% transmission and consistent wavelength transparency past 23 m with improved %T at low temperature. Homoepitaxy and AFM results indicate the ultra low doped GaSb has a low thermal desorbtion character and qualified morphology. In summary, improvements in room temperature IR transmission and extended wavelength characteristics have been shown consistently for ultra low doped n:GaSb substrates.

Allen, Lisa P.; Flint, Patrick; Dallas, Gordon; Bakken, Daniel; Blanchat, Kevin; Brown, Gail J.; Vangala, Shivashankar R.; Goodhue, William D.; Krishnaswami, Kannan

2009-05-01T23:59:59.000Z

431

Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate  

SciTech Connect (OSTI)

Simultaneous growth of ?111?{sub B} free-standing and ±[110] lateral GaAsP epitaxial nanowires on GaAs (001) substrates were observed and investigated by electron microscopy and crystallographic analysis. It was found that the growth of both free-standing and lateral ternary nanowires via Au catalysts was driven by the fact that Au catalysts prefer to maintain low-energy (111){sub B} interfaces with surrounding GaAs(P) materials: in the case of free-standing nanowires, Au catalysts maintain (111){sub B} interfaces with their underlying GaAsP nanowires; while in the case of lateral nanowires, each Au catalyst remain their side (111){sub B} interfaces with the surrounding GaAs(P) material during the lateral nanowire growth.

Sun, Wen; Xu, Hongyi [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia)] [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Guo, Yanan [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia) [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia); Gao, Qiang; Hoe Tan, Hark; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia)] [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia); Zou, Jin, E-mail: j.zou@uq.edu.au [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia) [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia QLD 4072 (Australia)

2013-11-25T23:59:59.000Z

432

Theoretical comparison of multiple quantum wells and thick-layer designs in InGaN/GaN solar cells  

SciTech Connect (OSTI)

This theoretical work analyzes the photovoltaic effect in non-polar InGaN/GaN solar cells. Our electronic transport model considers quantum behaviors related to confinement, tunneling, electron-phonon, and electron-photon scatterings. Based on this model, we compare a multiple quantum wells cell with its thick-layer counterpart. We show that the structure of multiple quantum wells is a promising design providing better compromise between photon-absorption and electronic transport. This balance is necessary since these two phenomena are shown to be antagonist in nanostructure based solar cells. In these devices, we also show that phonon absorption increases the short-circuit current, while phonon emission reduces the open-circuit voltage.

Cavassilas, Nicolas; Michelini, Fabienne; Bescond, Marc [Aix Marseille Univ, CNRS, IM2NP UMR 7334, 13384 Marseille (France)

2014-08-11T23:59:59.000Z

433

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes  

SciTech Connect (OSTI)

We model the carrier recombination mechanisms in GaInN/GaN light-emitting diodes as R=An+Bn{sup 2} +Cn{sup 3} +f(n) , where f(n) represents carrier leakage out of the active region. The term f(n) is expanded into a power series and shown to have higher-than-third-order contributions to the recombination. The total third-order nonradiative coefficient (which may include an f(n) leakage contribution and an Auger contribution) is found to be 8×10{sup ?29} ?cm{sup 6} ?s{sup ?1} . Comparison of the theoretical ABC+f(n) model with experimental data shows that a good fit requires the inclusion of the f(n) term.

Dai, Qi; Shan, Qifeng; Wang, Jing; Chhajed, Sameer; Cho, Jaehee; Schubert, E. Fred; Crawford, Mary H.; Koleske, Daniel D.; Kim, Min-Ho; Park, Yongjo

2010-01-01T23:59:59.000Z

434

Carrier-induced change in refractive index of InP, GaAs, and InGaAsP  

SciTech Connect (OSTI)

The authors have theoretically estimated the change in refractive index {Delta}{ital n} produced by injection of free carriers in InP, GaAs, and InGaAsP. Bandfilling (Burstein-Moss effect), band-gap shrinkage, and free-carrier absorption (plasma effect) were included. Carrier concentrations of 10{sup 16}/cm{sup 3} to 10{sup 19}/cm{sup 3} and photon energies of 0.8 to 2.0 eV were considered. Predictions of {Delta}{ital n} are in reasonably good agreement with the limited experimental data available. Refractive index changes as large as 10{sup {minus} 2} are predicted for carrier concentrations of 10{sup 18}/cm{sup 3}, suggesting that low-loss optical phase modulators and switches using carrier injection are feasible in these materials.

Bennett, B.R. (Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA (US)); Soref, R.A. (Solid State Sciences Directorate, Rome Air Development Center, Hanscom Air Force Base, Bedford, MA (US)); Del Alamo, J.A. (Dept. of Electrical Engineering and Computer Science, Massachussets Institute of Technology, Cambridge, MA (US))

1990-01-01T23:59:59.000Z

435

Sensitivity of absorption spectra to surface segregation in InGaN/GaN quantum well structures  

SciTech Connect (OSTI)

We investigate the influence of the indium surface segregation on absorption spectra in InGaN/GaN quantum well structures having different indium amount. Results of the mathematical modeling show that such influence is more pronounced in quantum well structures with high indium amounts. The origin of this effect is related to the interplay between the indium surface segregation and internal electrostatic fields. Our theoretical analysis is performed using semiconductor Bloch equations within the Hartree-Fock approximation including into consideration excitonic effects. Results of the global sensitivity analysis evidence that the influence of the indium surface segregation is less than one order of magnitude in comparison with the impact of the quantum-well width and indium molar fraction. Also, the influence of the indium surface segregation is not the same for each interface of the quantum well.

Klymenko, M. V.; Shulika, O. V. [Lab. Photonics, Kharkov National University of Radio Electronics, Kharkov, 61166 (Ukraine); Sukhoivanov, I. A. [Department of Electronics, Engineering Division, University of Guanajuato, Salamanca, Guanajuato, 36885 (Mexico)

2014-05-15T23:59:59.000Z

436

Monolithic phosphor-free InGaN/GaN quantum dot wavelength converter white light emitting diodes  

SciTech Connect (OSTI)

We report the characteristics of phosphor-free self-organized InGaN/GaN quantum dot wavelength converter white light emitting diodes grown by plasma assisted molecular beam epitaxy. The exciting quantum dots, in which electrically injected carriers recombine, are blue-emitting and the converter dots are red-emitting. We have studied the effect of tuning the number of dot layers and the peak emission wavelength of the exciting and converter dots on the nature of the emitted white light, in terms of the chromaticity coordinates and correlated color temperature. Depending on the values of these wavelengths, color temperatures in the range of 4420–6700?K have been derived at a current density of 45?A/cm{sup 2} across multiple devices. The variation of the color temperature with change in injection current is found to be very small.

Jahangir, Shafat; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States); Pietzonka, Ines; Strassburg, Martin [OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, Regensburg (Germany)

2014-09-15T23:59:59.000Z

437

ArF laser-based quantum well intermixing in InGaAs/InGaAsP heterostructures  

SciTech Connect (OSTI)

Radiation from a 193 nm ArF laser was investigated to modify surface properties of InGaAs/InGaAsP quantum well (QW) heterostructures and introduce defects required to enhance intermixing during the annealing process. A top 200 nm thick sacrificial layer of InP served as a reservoir for laser generated defects. The irradiation with up to 90 pulses at 65-150 mJ/cm{sup 2} allowed to generate an array of 1.2x1 mm{sup 2} sites of QW intermixed material, with bandgap energy blueshifted up to 107 nm. We discuss the mechanism and advantages of this approach for postgrowth wafer level fabrication of multibandgap QW material.

Genest, Jonathan; Beal, Romain; Aimez, Vincent; Dubowski, Jan J. [Department of Electrical and Computer Engineering, Center of Excellence for Information Engineering, Universite de Sherbrooke, Sherbrooke, Quebec J1K 2R1 (Canada)

2008-08-18T23:59:59.000Z

438

Lucretia: A Matlab-Based Toolbox for the Modellingand Simulation of Single-Pass Electron Beam Transport Systems  

SciTech Connect (OSTI)

We report on Lucretia, a new simulation tool for the study of single-pass electron beam transport systems. Lucretia supports a combination of analytic and tracking techniques to model the tuning and operation of bunch compressors, linear accelerators, and beam delivery systems of linear colliders and linac-driven Free Electron Laser (FEL) facilities. Extensive use of Matlab scripting, graphics, and numerical capabilities maximize the flexibility of the system, and emphasis has been placed on representing and preserving the fixed relationships between elements (common girders, power supplies, etc.) which must be respected in the design of tuning algorithms. An overview of the code organization, some simple examples, and plans for future development are discussed.

Tenenbaum, P.; /SLAC

2005-09-30T23:59:59.000Z

439

Spectral Studies of Flaring FSRQs at GeV Energies Using Pass 8 Fermi-LAT Data  

E-Print Network [OSTI]

Flat spectrum radio quasars (FSRQs) are bright active galactic nuclei surrounded by gas clouds within a UV-visible intense radiation field that form the so-called broad line region (BLR). These objects emit relativistic jets from a region close to the central supermassive black hole and through the BLR. The Fermi-Large Area Telescope (Fermi-LAT) is sensitive to gamma-ray photons from $\\sim$30 MeV to more than 300 GeV. We have performed spectral analysis of bright FSRQs in a 5.5 year (2008-2014) data sample collected by Fermi-LAT, using the new Pass 8 event selection and instrument response function. Also, our study of flaring episodes in a limited time range brings interesting results while compared to the full 5.5 year data samples.

Britto, Richard J G; Lott, Benoît

2015-01-01T23:59:59.000Z

440

X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure  

SciTech Connect (OSTI)

High-resolution X-ray diffraction analysis and scanning confocal Raman spectroscopy are used to study the spatial distribution of strains in the In{sub x}Ga{sub 1-x}N/GaN layers and structural quality of these layers in a multilayered light-emitting diode structure produced by metal-organic chemical vapor deposition onto (0001)-oriented sapphire substrates. It is shown that elastic strains almost completely relax at the heterointerface between the thick GaN buffer layer and In{sub x}Ga{sub 1-x}N/GaN buffer superlattice. It is established that the GaN layers in the superlattice are in a stretched state, whereas the alloy layers are in a compressed state. In magnitude, the stretching strains in the GaN layers are lower than the compressive strains in the InGaN layers. It is shown that, as compared to the buffer layers, the layers of the superlattice contain a smaller number of dislocations and the distribution of dislocations is more randomly disordered. In micro-Raman studies on scanning through the thickness of the multilayered structure, direct evidence is obtained for the asymmetric gradient distributions of strains and crystal imperfections of the epitaxial nitride layers along the direction of growth. It is shown that the emission intensity of the In{sub x}Ga{sub 1-x}N quantum well is considerably (more than 30 times) higher than the emission intensity of the GaN barrier layers, suggesting the high efficiency of trapping of charge carriers by the quantum well.

Strelchuk, V. V., E-mail: Strelch@isp.kiev.ua; Kladko, V. P.; Avramenko, E. A.; Kolomys, O. F.; Safryuk, N. V.; Konakova, R. V. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine); Yavich, B. S., E-mail: byavich@soptel.ru [ZAO Svetlana-Optoelectronics (Russian Federation); Valakh, M. Ya.; Machulin, V. F.; Belyaev, A. E. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)

2010-09-15T23:59:59.000Z

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors  

SciTech Connect (OSTI)

A drift-diffusion transport model has been used to examine the performance capabilities of AlGaN/GaN Npn heterojunction bipolar transistors (HBTs). The Gummel plot from the first GaN-based HBT structure recently demonstrated is adjusted with simulation by using experimental mobility and lifetime reported in the literature. Numerical results have been explored to study the effect of the p-type Mg doping and its incomplete ionization in the base. The high base resistance induced by the deep acceptor level is found to be the cause of limiting current gain values. Increasing the operating temperature of the device activates more carriers in the base. An improvement of the simulated current gain by a factor of 2 to 4 between 25 and 300 C agrees well with the reported experimental results. A preliminary analysis of high frequency characteristics indicates substantial progress of predicted rf performances by operating the device at higher temperature due to a reduced extrinsic base resistivity.

MONIER,C.; PEARTON,S.J.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-03-10T23:59:59.000Z

442

Deep Levels in p-Type InGaAsN Lattice Matched to GaAs  

SciTech Connect (OSTI)

Deep level transient spectroscopy (DLTS) measurements were utilized to investigate deep level defects in metal-organic chemical deposition (MOCVD)-grown unintentionally doped p-type InGaAsN films lattice matched to GaAs. The as-grown material displayed a high concentration of deep levels distributed within the bandgap, with a dominant hole trap at E{sub v} + 0.10 eV. Post-growth annealing simplified the deep level spectra, enabling the identification of three distinct hole traps at 0.10 eV, 0.23 eV, and 0.48 eV above the valence band edge, with concentrations of 3.5 x 10{sup 14} cm{sup {minus}3}, 3.8 x 10{sup 14} cm{sup {minus}3}, and 8.2 x 10{sup 14} cm{sup {minus}3}, respectively. A direct comparison between the as-grown and annealed spectra revealed the presence of an additional midgap hole trap, with a concentration of 4 x 10{sup 14} cm{sup {minus}3} in the as-grown material. The concentration of this trap is sharply reduced by annealing, which correlates with improved material quality and minority carrier properties after annealing. Of the four hole traps detected, only the 0.48 eV level is not influenced by annealing, suggesting this level may be important for processed InGaAsN devices in the future.

Allerman, A.A.; Jones, E.D.; Kaplar, R.J.; Kurtz, S.R.; Kwon, D.; Ringel, S.A.

1999-03-02T23:59:59.000Z

443

Avalanche buildup time of an InP/InGaAsP/InGaAs APD at high gain  

SciTech Connect (OSTI)

Under a high-gain operating condition, the presence of a multiplication process in the InGaAs(P) regions of an InP/InGaAsP/InGaAs avalanche photodiode having a structure of separated absorption and multiplication regions (SAM-APD) could lead to significant enhancement of the avalanche buildup time. As a result, the bandwidth of the device could be reduced considerably. The dependence of the avalanche multiplication factor and the intrinsic response time on the reverse bias voltage, the heterointerface field, the doping concentrations, and the width of the InP layer are examined in detail for the case in which hole injection is assumed. It is shown, for example, that for a fixed value of doping concentrations, the reduction of the excess noise factor and the enhancement of the gain-bandwidth product of the device can be made at the same time by a proper increase of the width of the InP layer.

Hsieh, H.C.; Sargeant, W. (Iowa State Univ. of Science and Technology, Ames, IA (USA). Dept. of Electrical Engineering)

1989-09-01T23:59:59.000Z

444

Materials physics and device development for improved efficiency of GaN HEMT high power amplifiers.  

SciTech Connect (OSTI)

GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the art HEMT transistors and amplifiers.

Kurtz, Steven Ross; Follstaedt, David Martin; Wright, Alan Francis; Baca, Albert G.; Briggs, Ronald D.; Provencio, Paula Polyak; Missert, Nancy A.; Allerman, Andrew Alan; Marsh, Phil F.; Koleske, Daniel David; Lee, Stephen Roger; Shul, Randy John; Seager, Carleton Hoover; Tigges, Christopher P.

2005-12-01T23:59:59.000Z

445

GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy  

SciTech Connect (OSTI)

Dilute nitride GaNAsP thin films were grown via a GaAsP metamorphic buffer on GaP(100) substrate with gas-source molecular beam epitaxy. The compositions of this III-V-V-V compound were determined by channeling Rutherford backscattering spectroscopy and nuclear reaction analysis. Photoreflectance shows two distinctive transitions from the valence band to the split conduction bands due to N incorporation. Photoluminescence and optical absorption show the fundamental bandgap of Ga(N)AsP is largely tailored by the small amount of N. The observed multiband characteristics and the bandgap tunability of GaNAsP are two merits that fit into the intermediate-band solar cell roadmap, and GaNAsP of high crystal quality provides a strong candidate for intermediate band solar cell materials.

Kuang, Y. J. [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States)] [Department of Physics, University of California, San Diego, La Jolla, California 92093 (United States); Yu, K. M.; Walukiewicz, W. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)] [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Kudrawiec, R. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Institute of Physics, Wroclaw University of Technology, Wybrzeze, Wyspianskiego 27, 50-370 Wroclaw (Poland); Luce, A. V. [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States) [Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Ting, M. [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States)] [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States); Tu, C. W. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)] [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)

2013-03-18T23:59:59.000Z

446

Low-cost, high-efficiency solar cells utilizing GaAs-on-Si technology  

SciTech Connect (OSTI)

This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, [approximately] 1 [times] 10[sup 5] cm[sup [minus]5], as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 [times]10[sup 7] cm[sup [minus]2]. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells.

Vernon, S.M. (Spire Corp., Bedford, MA (United States))

1993-04-01T23:59:59.000Z

447

Ga[sub 13], Al[sub 13], GaAl[sub 12], and chromium-pillared montmorillonites: Acidity and reactivity for cumene conversion  

SciTech Connect (OSTI)

A comparison has been made of the acidic characters of a series of metal polyoxocation pillar interlayered clay minerals (M-PILCs) by studying the infrared spectra of adsorbed pyridine. These comparisons were made for Ga[sub 13]-, Al[sub 13]- and GaAl[sub 12]-PILCs, and for Na[sup +]-exchanged montmorillonite (Na-STx-1). The Ga[sub 13]-PILC, was found to exhibit the strongest Lewis acid sites, followed by the AL[sub 13]-, and GaAl[sub 12]-PILCs and then by the Ns-STx-1. The relative number of Lewis acid sites, however, was found to be much greater for the GaAl[sub 12]-PILC, particularly after calcination at higher temperatures, indicating that the Ga[sub 13] Lewis acid sites did not have as high a thermal stability. The Broensted acidic characters for the pillared clays depend on the pillar, and follow the general decreasing order of abundance of GaAl[sub 12]-, Al[sub 13], and Ga[sub 13]-PILC when expressed as absorbance per unit mass. When the acidities per unit surface area were estimated, however, the Ga[sub 13]-PILCs were found to have the greatest number. This indicated that while the pillars contribute to the PILC acidities primarily through increasing the exposed phyllosilicate sheet surface areas, there is also a significant effect arising from the acidic characters of the pillars themselves. The dehydrogenation activities of Ga[sub 13]-, GaAl[sub 12]-, Al[sub 13]-, and Na-STx-1, in addition to a chromium polyoxocation-PILC, were compared by observing the products formed upon reaction with the model compound cumene. The Ga[sub 13]- and chromium-PILCs and the Na-Stx-1 exhibited almost exclusively dehydrogenation activities, whereas the Al[sub 13]- and GaAl[sub 12]-PILCs exhibited both cracking and dehydrogenation behaviors. These results prove that the pillars themselves can very strongly effect the catalytic activities of the PILCs. 3 refs., 6 figs., 2 tabs.

Bradley, S.M.; Kydd, R.A. (Univ. of Calgary, Alberta (Canada))

1993-05-01T23:59:59.000Z

448

Micheal L Golden Deputy Chief  

E-Print Network [OSTI]

David Clausnitzer Raleigh Michelle Clendenin Lincoln Soil Quality & Ecosystems Branch 6 = Total #12 in CDSI MLRA 75 Loamy Upland 3 = Total #12; 7 Soil Quality & Ecosystems Branch (Standards) 6 Vegetation) 8 Vacant Vegetative Inventory Specialists (Quality Control) 3 Editors ----------- 75 Total FTE

449

Golden Laboratories and Offices | NREL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickr Flickr Editor'sshortGeothermalGo Back to School withDOEGolden

450

E-Print Network 3.0 - algorithm ga technique Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

for: algorithm ga technique Page: << < 1 2 3 4 5 > >> 1 GAMMA: Global Arrays Meets MATLAB Rajkiran Panuganti Summary: is a straightforward implementa- tion of a standard...

451

Evolution of ion-induced nanoparticle arrays on GaAs surfaces  

SciTech Connect (OSTI)

We have examined the evolution of irradiation-induced Ga nanoparticle (NP) arrays on GaAs surfaces. Focused-ion-beam irradiation of pre-patterned GaAs surfaces induces monotonic increases in the NP volume and aspect ratio up to a saturation ion dose, independent of NP location within the array. Beyond the saturation ion dose, the NP volume continues to increase monotonically while the NP aspect ratio decreases monotonically. In addition, the NP volumes (aspect ratios) are highest (lowest) for the corner NPs. We discuss the relative influences of bulk and surface diffusion on the evolution of Ga NP arrays.

Kang, M.; Al-Heji, A. A.; Shende, O.; Huang, S.; Jeon, S.; Goldman, R. S., E-mail: rsgold@umich.edu [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

2014-05-05T23:59:59.000Z

452

Absorption and photoluminescence of ternary nanostructured Ge-S-Ga(In)glassy semiconductor systems  

SciTech Connect (OSTI)

The photoluminescence and luminescence excitation spectra and the edge and IR absorption of Ge-S-Ga(In) glassy semiconductor systems are studied. The observed shifts of the optical-absorption edge, photoluminescence spectra (a decrease in their full width at half-maximum), and luminescence excitation spectra to lower energies upon the introduction of Ga or In into Ge-S binary systems are due to the fact that Ga or In tend to interact with sulfur, rather than with germanium. As the content of Ga(In) in the system increases, the intensity of the absorption band associated with vibrations of the Ge-S bond decreases.

Babaev, A. A., E-mail: babaev-arif@mail.ru [Russian Academy of Sciences, Amirkhanov Institute of Physics, Dagestan Scientific Center (Russian Federation); Kudoyarova, V. Kh. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-07-15T23:59:59.000Z

453

Structural defects in GaN revealed by Transmission Electron Microscopy  

SciTech Connect (OSTI)

This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

Liliental-Weber, Zuzanna

2014-04-18T23:59:59.000Z

454

The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)  

SciTech Connect (OSTI)

This work is dedicated to the study of the growth by ammonia source molecular beam epitaxy of Al{sub x}Ga{sub 1-x}N/GaN high electron mobility transistors on (111) oriented silicon substrates. The effect of growth conditions on the structural and electrical properties of the heterostructures was investigated. It is shown that even a slight variation in the growth temperature of the thick GaN buffer on AlN/GaN stress mitigating layers has a drastic influence on these properties via a counterintuitive effect on the dislocation density. Both in situ curvature measurements and ex situ transmission electron microscopy and x-ray diffraction experiments indicate that the relaxation rate of the lattice mismatch stress increases with the growth temperature but finally results in a higher dislocations density. Furthermore, a general trend appears between the final wafer curvature at room temperature and the threading dislocation density. Finally, the influence of the dislocation density on the GaN buffer insulating properties and the two-dimensional electron gas transport properties at the Al{sub x}Ga{sub 1-x}N/GaN interface is discussed.

Baron, N. [CRHEA-CNRS, rue Bernard Gregory, Parc de Sophia Antipolis, 06560 Valbonne (France); PICOGIGA International, Place Marcel Rebuffat, Parc de Villejust, 91971 Courtaboeuf (France); Cordier, Y.; Chenot, S.; Vennegues, P.; Tottereau, O.; Leroux, M.; Semond, F.; Massies, J. [CRHEA-CNRS, rue Bernard Gregory, Parc de Sophia Antipolis, 06560 Valbonne (France)

2009-02-01T23:59:59.000Z

455

Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices  

SciTech Connect (OSTI)

GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO{sub x}/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

C.A. Wang; D.A. Shiau; P.G. Murphy; P.W. O'brien; R.K. Huang; M.K. Connors; A.C. Anderson; D. Donetsky; S. Anikeev; G. Belenky; D.M. Depoy; G. Nichols

2003-06-16T23:59:59.000Z

456

Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter  

SciTech Connect (OSTI)

Metamorphic (i.e., linear composition graded) GaInN buffer layers with an increased in-plane lattice parameter, grown by plasma-assisted molecular beam epitaxy, were used as templates for metal organic vapor phase epitaxy (MOVPE) grown GaInN/GaInN quantum wells (QWs), emitting in the green to red spectral region. A composition pulling effect was observed allowing considerable higher growth temperatures for the QWs for a given In composition. The internal quantum efficiency (IQE) of the QWs was determined by temperature and excitation power density dependent photoluminescence (PL) spectroscopy. An increase in IQE by a factor of two was found for green emitting QWs grown on metamorphic GaInN buffer compared to reference samples grown on standard GaN buffer layers. The ratio of room temperature to low temperature intensity PL of the red emitting QWs were found to be comparable to the PL efficiency of green emitting QWs, both grown on metamorphic GaInN buffers. The excitation density and well width dependence of the IQE indicate a reduction of the quantum confined Stark effect upon growth on GaInN buffer layers with increased in-plane lattice parameter.

Däubler, J., E-mail: juergen.daeubler@iaf.fraunhofer.de; Passow, T.; Aidam, R.; Köhler, K.; Kirste, L.; Kunzer, M.; Wagner, J. [Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, 79108 Freiburg (Germany)

2014-09-15T23:59:59.000Z

457

Investigation of defect properties in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy  

E-Print Network [OSTI]

Renewable Energy Lab, Golden, CO 80401, USA Received 1 July 2003; received in revised form 1 January 2004 Renewable Energy Laboratory (NREL) was found to contain three minority-carrier (elec- tron) traps and a 13 the transition energy for a large number of defects in CIS materials. However, there are some discrepancies

Anderson, Timothy J.

458

High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier  

SciTech Connect (OSTI)

The electroluminescent properties of an n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with a high potential barrier in the conduction band (large conduction-band offset) at the n-GaSb/n-InGaAsSb type-II heterointerface ({Delta}E{sub c} = 0.79 eV) are studied. Two bands with peaks at 0.28 and 0.64 eV at 300 K, associated with radiative recombination in n-InGaAsSb and n-GaSb, respectively, are observed in the electroluminescence (EL) spectrum. In the entire temperature range under study, T = 290-480 K, additional electron-hole pairs are formed in the n-InGaAsSb active region by impact ionization with hot electrons heated as a result of the conduction-band offset. These pairs contribute to radiative recombination, which leads to a nonlinear increase in the EL intensity and output optical power with increasing pump current. A superlinear increase in the emission power of the long-wavelength band is observed upon heating in the temperature range T = 290-345 K, and a linear increase is observed at T > 345 K. This work for the first time reports an increase in the emission power of a light-emitting diode structure with increasing temperature. It is shown that this rise is caused by a decrease in the threshold energy of the impact ionization due to narrowing of the band gap of the active region.

Petukhov, A. A., E-mail: andrey-rus29@rambler.ru; Zhurtanov, B. E.; Kalinina, K. V.; Stoyanov, N. D.; Salikhov, H. M.; Mikhailova, M. P.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-09-15T23:59:59.000Z

459

Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions  

SciTech Connect (OSTI)

This Letter investigates the efficiency enhancement achieved by tunnel junction insertion into the InGaN/GaN multi-quantum well (MQW) active region of blue light emitting diodes (LEDs). The peak quantum efficiency of such LED exceeds 100%, but the maximum wall-plug efficiency (WPE) hardly changes. However, due to the increased bias, the WPE peaks at much higher input power, i.e., the WPE droop is significantly delayed, and the output power is strongly enhanced. The main physical reason for this improvement lies in the non-uniform vertical carrier distribution typically observed within InGaN MQWs.

Piprek, Joachim, E-mail: piprek@nusod.org [NUSOD Institute LLC, P.O. Box 7204, Newark, Delaware 19714 (United States)

2014-02-03T23:59:59.000Z

460

Magnetic properties of Ga doped cobalt ferrite: Compton scattering study  

SciTech Connect (OSTI)

We present the spin momentum density of Ga doped CoFe{sub 2}O{sub 4} at 100 K using magnetic Compton scattering. The measurement has been performed using circularly polarized synchrotron radiations of 182.65 keV at SPring8, Japan. The experimental profile is decomposed into its constituent profile to determine the spin moment at individual sites. Co atom has the maximum contribution (about 58%) in the total spin moment of the doped CoFe{sub 2}O{sub 4}.

Sharma, Arvind, E-mail: arvind.phd.swm@gmail.com; Mund, H. S.; Ahuja, B. L. [Department of Physics, University College of Science, M.L. Sukhadia University, Udaipur-313001 (India); Sahariya, Jagrati [Department of Physics, Manipal University, Jaipur-303007 (India); Itou, M.; Sakurai, Y. [Japan Synchrotron Radiation Research Institute, SPring8, 1-1-1 Kouto, Sayo, Hyogo 679-5198 (Japan)

2014-04-24T23:59:59.000Z

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Structure, transport and thermal properties of UCoGa  

SciTech Connect (OSTI)

By means of neutron powder diffraction, we find that UCoGa crystallizes in the hexagonal ZrNiAl structure and orders ferromagnetically at low temperatures with magnetic moments stacked along the c axis. The magnetic-ordering temperature is reflected in anomalies in the temperature dependencies of the electrical resistivity and the specific heat at Tc = 47 K. Furthermore, the strong anisotropy in the electrical resistivity for i {parallel} c and i {perpendicular} c indicates a significant contribution of the magnetic anisotropy to the electrical resistivity.

Purwanto, A.; Robinson, R.A. [Los Alamos National Lab., NM (United States); Prokes, K. [Amsterdam Univ. (Netherlands). Van der Waals Lab.] [and others

1994-04-01T23:59:59.000Z

462

Low dimensional GaAs/air vertical microcavity lasers  

SciTech Connect (OSTI)

We report on the fabrication of gallium arsenide (GaAs)/air distributed Bragg reflector microresonators with indium gallium arsenide quantum wells. The structures are studied via momentum resolved photoluminescence spectroscopy which allows us to investigate a pronounced optical mode quantization of the photonic dispersion. We can extract a length parameter from these quantized states whose upper limit can be connected to the lateral physical extension of the microcavity via analytical calculations. Laser emission from our microcavity under optical pumping is observed in power dependent investigations.

Gessler, J.; Steinl, T.; Fischer, J.; Höfling, S.; Schneider, C.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg (Germany); Mika, A.; S?k, G.; Misiewicz, J. [Institute of Physics, Wroclaw University of Technology, Wybrze?e Wyspia?skiego 27, 50-370 Wroc?aw (Poland)

2014-02-24T23:59:59.000Z

463

Quantum effects in electron beam pumped GaAs  

SciTech Connect (OSTI)

Propagation of waves in nano-sized GaAs semiconductor induced by electron beam are investigated. A dispersion relation is derived by using quantum hydrodynamics equations including the electrons and holes quantum recoil effects, exchange-correlation potentials, and degenerate pressures. It is found that the propagating modes are instable and strongly depend on the electron beam parameters, as well as the quantum recoil effects and degenerate pressures. The instability region shrinks with the increase of the semiconductor number density. The instability arises because of the energetic electron beam produces electron-hole pairs, which do not keep in phase with the electrostatic potential arising from the pair plasma.

Yahia, M. E. [Faculty of Engineering, The British University in Egypt (BUE), El-Shorouk City, Cairo (Egypt) [Faculty of Engineering, The British University in Egypt (BUE), El-Shorouk City, Cairo (Egypt); National Institute of Laser Enhanced Sciences (NILES), Cairo University (Egypt); Azzouz, I. M. [National Institute of Laser Enhanced Sciences (NILES), Cairo University (Egypt)] [National Institute of Laser Enhanced Sciences (NILES), Cairo University (Egypt); Moslem, W. M. [Department of Physics, Faculty of Science, Port Said University, Port Said (Egypt)] [Department of Physics, Faculty of Science, Port Said University, Port Said (Egypt)

2013-08-19T23:59:59.000Z

464

Defect studies in ion irradiated AlGaN. | EMSL  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed Newcatalyst phasesData Files Data Files 1B&W Y-12studies in ion irradiated AlGaN.

465

Economic and Conservation Evaluation of Capital Renovation Projects: Maverick County Water Control and Improvement District No. 1 (Eagle Pass) – Lining Main Canal – Final  

E-Print Network [OSTI]

rights of 100.0 ac-ft per year, and 1,085,966.0 ac-ft of non-consumptive hydro-electric water rights. The District contracts for delivery of water to Maverick County and the City of Eagle Pass. The District does not contract to deliver water to any... industrial customer other than the AEP/Central Power and Light Hydro- electric Power Plant (with the non-consumptive hydro-electric water mentioned above). Currently, the District is the only source of water for the City of Eagle Pass and the towns...

Rister, M. Edward; Lacewell, Ronald D.; Sturdivant, Allen W.; Robinson, John R.C.; Popp, Michael C.

466

Experiencing the Message Passing  

E-Print Network [OSTI]

Nijmegen, faculteit Wiskunde en Informatica, op 19 januari 1996 Door: Edward Markus Petrus Albertus Mahieu in this change are Erik­Jan, Jornand, Paul and Ramon. I would like to thank them for their interest and support

Schouten, Theo

467

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar Home DesignPresentations Presentations Sort by:at Argonne10-1312

468

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar Home DesignPresentations Presentations Sort by:at Argonne10-13124 Press

469

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar Home DesignPresentations Presentations Sort by:at Argonne10-13124 Press5

470

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar Home DesignPresentations Presentations Sort by:at Argonne10-13124

471

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar Home DesignPresentations Presentations Sort by:at Argonne10-131247 Press

472

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar Home DesignPresentations Presentations Sort by:at Argonne10-131247

473

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar Home DesignPresentations Presentations Sort by:at Argonne10-13124709

474

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar Home DesignPresentations Presentations Sort by:at Argonne10-1312470910

475

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar Home DesignPresentations Presentations Sort by:at Argonne10-13124709101

476

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar Home DesignPresentations Presentations Sort by:at

477

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar Home DesignPresentations Presentations Sort by:atNEWS MEDIA CONTACT

478

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar Home DesignPresentations Presentations Sort by:atNEWS MEDIA CONTACTJudy

479

ARM - Instrument - pass  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcal Documentation(AVIRIS)govInstrumentsgramsgovInstrumentsngm DocumentationgovInstrumentsozone Documentation

480

Correspondence Please pass the  

E-Print Network [OSTI]

. agardner@clarku.edu *On behalf of 4 co-signatories (see go.nature.com/gx2t9y for full list). Recycle waste's complex product flows so that waste and recycling practices can be adapted for enriching soil, which is a non- renewable resource. Organic agriculture in subsistence-farming systems throughout the developing

Cai, Long

Note: This page contains sample records for the topic "ga golden pass" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

ARM - Campaign Instrument - pass  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation DesertgovInstrumentsap-surfgovInstrumentsnfov Comments? We

482

First Pass | Jefferson Lab  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsing ZirconiaPolicyFeasibilityField OfficeFirm UsesNuclearFirst Observation

483

Full Hybrid: Passing  

Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative Fuels Data CenterEnergyAuthorization for(EV) Road User AssessmentNREL

484

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for medicalSecurityPresident'sCongressman Bill6 Aug.7-116-20

485

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for medicalSecurityPresident'sCongressman Bill6

486

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for medicalSecurityPresident'sCongressman Bill65 May 15,

487

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for medicalSecurityPresident'sCongressman Bill65 May 15,7

488

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for medicalSecurityPresident'sCongressman Bill65 May 15,716

489

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for medicalSecurityPresident'sCongressman Bill65 May

490

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for medicalSecurityPresident'sCongressman Bill65 May07 March

491

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for medicalSecurityPresident'sCongressman Bill65 May07

492

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for medicalSecurityPresident'sCongressman Bill65 May0710-11

493

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for medicalSecurityPresident'sCongressman Bill65

494

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for medicalSecurityPresident'sCongressman Bill658-10 April

495

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for medicalSecurityPresident'sCongressman Bill658-10

496

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for medicalSecurityPresident'sCongressman Bill658-106-13

497

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for medicalSecurityPresident'sCongressman Bill658-106-132

498

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for medicalSecurityPresident'sCongressman Bill658-106-1328

499

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for medicalSecurityPresident'sCongressman Bill658-106-1328

500

Press Pass - Press Releases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - SeptemberMicroneedles for medicalSecurityPresident'sCongressman