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Sample records for ga golden pass

  1. EIS-0501: Golden Pass LNG Export and Pipeline Project, Texas...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    1: Golden Pass LNG Export and Pipeline Project, Texas and Louisiana EIS-0501: Golden Pass LNG Export and Pipeline Project, Texas and Louisiana Summary The Federal Energy Regulatory ...

  2. EIS-0501: Golden Pass LNG Export and Pipeline Project, Texas...

    Broader source: Energy.gov (indexed) [DOE]

    at the existing Golden Pass liquefied natural gas terminal in Jefferson County, Texas. The proposal includes three new compressor stations in Jefferson and Orange Counties,...

  3. SEMI-ANNUAL REPORTS FOR GOLDEN PASS PRODUCTS LLC - FE DKT. NO...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GOLDEN PASS PRODUCTS LLC - FE DKT. NO. 12-88-LNG - ORDER 3147 SEMI-ANNUAL REPORTS FOR GOLDEN PASS PRODUCTS LLC - FE DKT. NO. 12-88-LNG - ORDER 3147 PDF icon April 2013 PDF icon ...

  4. EIS-0501: Golden Pass LNG Export Project; Texas and Louisiana | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Energy 01: Golden Pass LNG Export Project; Texas and Louisiana EIS-0501: Golden Pass LNG Export Project; Texas and Louisiana Summary The Federal Energy Regulatory Commission (FERC) is analyzing the potential environmental impacts of a proposal to construct and operate natural gas liquefaction and export facilities at the existing Golden Pass liquefied natural gas terminal in Jefferson County, Texas. The proposal includes three new compressor stations in Jefferson and Orange Counties,

  5. Golden Pass, TX Natural Gas Liquefied Natural Gas Imports (price) (Dollars

    U.S. Energy Information Administration (EIA) Indexed Site

    per Thousand Cubic Feet) Golden Pass, TX Natural Gas Liquefied Natural Gas Imports (price) (Dollars per Thousand Cubic Feet) Golden Pass, TX Natural Gas Liquefied Natural Gas Imports (price) (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's 7.90 5.36 -- -- -- - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 4/29/2016 Next

  6. EA-1971: Golden Pass LNG Export and Pipeline Project, Texas and Louisiana

    Broader source: Energy.gov [DOE]

    The Federal Energy Regulatory Commission (FERC), with DOE as a cooperating agency, announced its intent to prepare an EA to analyze the potential environmental impacts of a proposal to construct and operate natural gas liquefaction and export facilities at the existing Golden Pass liquefied natural gas terminal in Jefferson County, Texas. In June 2014, FERC announced that due to changes in the project location and scope, it would prepare an EIS. See DOE/EIS-0501.

  7. Golden Pass, TX Natural Gas Liquefied Natural Gas Imports from Qatar

    U.S. Energy Information Administration (EIA) Indexed Site

    (Million Cubic Feet) from Qatar (Million Cubic Feet) Golden Pass, TX Natural Gas Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 3,902 4,896 4,100 18,487 4,900 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 4/29/2016 Next Release Date: 5/31/2016 Referring Pages: U.S.

  8. Golden Field Office | Open Energy Information

    Open Energy Info (EERE)

    DOE Golden Field Office) Jump to: navigation, search Name: DOE Golden Field Office Abbreviation: DOE GFO Address: 15013 Denver West Parkway Place: Golden, Colorado Zip: 80401 Phone...

  9. High Temperature Reverse By-Pass Diodes Bias and Failures | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Reverse By-Pass Diodes Bias and Failures High Temperature Reverse By-Pass Diodes Bias and Failures Presented at the PV Module Reliability Workshop, February 26 - 27 2013, Golden, ...

  10. Golden - Local Information | NREL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Golden-Local Information This page provides travel information for visitors to the Golden offices and laboratories of the National Renewable Energy Laboratory. Transportation NREL is accessible via bus on the RTD route 20 from Aurora and Denver. Route 20 travels along 20th Avenue and ends at the NREL Education Center. Visit the RTD Web site or call 303-299-6000 to plan your trip or for more information. Visit the Denver International Airport site to find: Car rental agencies Shuttle services,

  11. Golden Laboratories and Offices | NREL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NREL's administrative offices and most research laboratories are located at our campus in Golden, Colorado, north of highway I-70 and west of Denver West Boulevard. View...

  12. Golden Opportunity: Noncompliance Determination (2013-SE-1418)

    Broader source: Energy.gov [DOE]

    DOE issued a Notice of Noncompliance Determination to Golden Opportunity, Inc. finding that freezer models Golden GFC51 and Golden GFC69 do not comport with the energy conservation standards.

  13. Golden Valley Wind Park | Open Energy Information

    Open Energy Info (EERE)

    Wind Park Jump to: navigation, search Name Golden Valley Wind Park Facility Golden Valley Wind Park Sector Wind energy Facility Type Commercial Scale Wind Facility Status In...

  14. Golden Field Office | Open Energy Information

    Open Energy Info (EERE)

    DOE Golden Field Office Abbreviation: DOE GFO Address: 15013 Denver West Parkway Place: Golden, Colorado Zip: 80401 Phone Number: 720-356-1800 ParentHolding Organization: US...

  15. Golden Field Office Contacts | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Golden Field Office » Golden Field Office Contacts Golden Field Office Contacts On this page you will find address and contact information for the Golden Field Office. Mailing Address U.S. Department of Energy Golden Field Office 15013 Denver West Parkway Golden, Colorado 80401 Main Number: 720-356-1800 Main Fax: 720-356-1750 Media Inquiries For media inquiries, please email the EERE communications team at EE.Media@ee.doe.gov. Golden Field Office Key Contacts Deputy Assistant Secretary For

  16. Golden Annual FOIA Report | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Golden Annual FOIA Report Golden Annual FOIA Report Golden Field Office FY '14 Annual FOIA Report, from the U.S. Department of Energy. PDF icon GFO FOIA FY 14 Annual Report More Documents & Publications Current Fiscal Year FOIA Requests received by Golden Field Office FIA-12-0063 - In the Matter of Native Hawaiian Legal Corporation. Previous Fiscal Year FOIA Requests received by Golden Field

  17. Golden Cooler: Order (2013-CE-5345)

    Broader source: Energy.gov [DOE]

    DOE ordered Golden Cooler to pay a $8,000 civil penalty after finding Golden Cooler had failed to certify that certain models of walk-in cooler and freezer components comply with the applicable energy conservation standards.

  18. Golden Field Office | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Golden Field Office Golden Field Office The Golden Field Office was designated a Department of Energy field office in December 1992 to provide EERE with enhanced capability to develop and commercialize renewable energy and energy-efficient technologies. What We Do Golden's mission is to support DOE's Office of Energy Efficiency and Renewable Energy (EERE) as its Business Service Center by awarding grants and contracts for clean energy projects, facilitating research and development (R&D)

  19. Golden, Colorado: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Society Registered Energy Companies in Golden, Colorado Ampulse Ampulse Corporation Blue Sun Biodiesel LLC Colorado Fuel Cell Center CFCC Energistic Systems Energy Solutions...

  20. Golden, Colorado: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    in Golden, Colorado Ampulse Ampulse Corporation Blue Sun Biodiesel LLC Colorado Fuel Cell Center CFCC Energistic Systems Energy Solutions Partners, LLC Industrial Solar...

  1. Golden Valley Electric Association - Residential Energy Efficiency...

    Broader source: Energy.gov (indexed) [DOE]

    30 Timer Controlling Exterior Vehicle Plug-In Outlet: 20 Switch Controlling Exterior Vehicle Plug-In Outlet: 10 Summary Golden Valley Electric Association's (GVEA) Builder...

  2. Golden Opportunity: Compromise Agreement (2013-SE-1418)

    Broader source: Energy.gov [DOE]

    DOE and Golden Opportunity, Inc. entered into a Compromise Agreement to resolve a case involving the distribution in commerce of noncompliant freezers.

  3. Categorical Exclusion Determinations: Golden Field Office | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Program Date: 03252015 Location(s): Nationwide Office(s): Golden Field Office March 24, 2015 CX-100203 Categorical Exclusion Determination Solar Hot Water Project in Greenburgh,...

  4. Golden Turbines LLC | Open Energy Information

    Open Energy Info (EERE)

    LLC Jump to: navigation, search Name: Golden Turbines LLC Address: 280 Meadow Ash Dr Lewis Center Zip: 43035 Region: United States Sector: Marine and Hydrokinetic Year Founded:...

  5. Press Pass - Press Releases

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    can obtain temporary visitors' passes. The laboratory will also be closed to pedestrian and bicycle traffic. Fermilab, traditionally open to visitors, closed its gates in...

  6. Golden Opportunity: Order (2014-CE-20003)

    Broader source: Energy.gov [DOE]

    DOE ordered Golden Opportunity, Inc. to pay a $8,000 civil penalty after finding Golden Opportunity had failed to certify that certain models of room air conditioners, central air conditioners/heat pumps, and residential clothes washers comply with the applicable energy conservation standards.

  7. Commercialization and Project Management PIA, Golden Field Office...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Commercialization and Project Management PIA, Golden Field Office Commercialization and Project Management PIA, Golden Field Office Commercialization and Project Management PIA, ...

  8. Golden Spread Panhandle Wind Ranch | Open Energy Information

    Open Energy Info (EERE)

    Wind Facility Status In Service Owner Golden Spread Electric Cooperative Developer Cielo Energy Purchaser Golden Spread Electric Cooperative Location Wildarado TX Coordinates...

  9. Message Passing (MPI)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Message Passing (MPI) Message Passing (MPI) MPI 3.1 final vote MPI Forum 2015.06.01 04 Chicago Members of the MPI forum vote in the MPI 3.1 standard at a meeting in Chicago in June , 2015. Pictured along with members of the MPI forum is the hardcopy version of the standard as a blue book. MPI is a library specification for message-passing, proposed as a standard by a broadly based committee of vendors, implementors, and users. The official version of the MPI documents are available from the MPI

  10. First Pass | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    First Pass First Pass February 25, 2014 The 12 GeV Upgrade Project at Jefferson Lab has many facets, and it is designed in such a way that some parts are completed and working while others are still in preparation. Recently, we have achieved a notable milestone. The accelerator commissioning was able to demonstrate 2.2 GeV of acceleration in a single pass around the upgraded accelerator. We have seen the completion of the bulk of civil construction work with the Central Helium Liquefier (CHL)

  11. Commercialization and Project Management PIA, Golden Field Office |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Commercialization and Project Management PIA, Golden Field Office Commercialization and Project Management PIA, Golden Field Office Commercialization and Project Management PIA, Golden Field Office PDF icon Commercialization and Project Management PIA, Golden Field Office More Documents & Publications Integrated Safety Management Workshop Registration, PIA, Idaho National Laboratory Occupational Medicine - Assistant PIA, Idaho National Laboratory Manchester Software

  12. PIA - IComplaints - Golden Field Office | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    IComplaints - Golden Field Office PIA - IComplaints - Golden Field Office PIA - IComplaints - Golden Field Office PDF icon PIA - IComplaints - Golden Field Office More Documents & Publications PIA - INL PeopleSoft - Human Resource System PIA - Human Resources - Personal Information Change Request - Idaho National Engineering Laboratory PIA - FOIAXpress

  13. Golden, Illinois: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Map This article is a stub. You can help OpenEI by expanding it. Golden is a village in Adams County, Illinois. It falls under Illinois' 18th congressional district.12...

  14. Golden Opportunity: Proposed Penalty (2014-CE-20003)

    Broader source: Energy.gov [DOE]

    DOE alleged in a Notice of Proposed Civil Penalty that Golden Opportunity, Inc. failed to certify room air conditioners, central air conditioners/heat pumps, and residential clothes washers as compliant with the applicable energy conservation standards.

  15. Golden Cooler: Proposed Penalty (2013-CE-5345)

    Broader source: Energy.gov [DOE]

    DOE alleged in a Notice of Proposed Civil Penalty that Golden Cooler failed to certify a variety of walk-in cooler or freezer components as compliant with the applicable energy conservation standards.

  16. Categorical Exclusion Determinations: Golden Field Office | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Air Conditioners RIN: 1904-AC82 CX(s) Applied: B5.1 EERE- Buildings Technology Program Date: 06172015 Location(s): Nationwide Office(s): Golden Field Office June 16, 2015...

  17. Categorical Exclusion Determinations: Golden Field Office | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Ultrasonic Bat Deterrent Award Number: DE-EE0007035 CX(s) Applied: B3.3 Wind Program Date: 07242015 Location(s): NY Office(s): Golden Field Office July 21, 2015 CX-100313...

  18. Categorical Exclusion Determinations: Golden Field Office | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Award Number: DE- EE-0007182 CX(s) Applied: A9, A11 Solar Energy Technologies Office Date: 10222015 Location(s): CA Office(s): Golden Field Office October 20, 2015 CX-100391...

  19. Categorical Exclusion Determinations: Golden Field Office | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Number: DE-EE0007137 CX(s) Applied: A9, B3.6, B3.11 Solar Energy Technologies Office Date: 09102015 Location(s): AL Office(s): Golden Field Office September 8, 2015 CX-100362...

  20. Golden Field Office Reading Room | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Business Operations » Golden Field Office » Golden Field Office Reading Room Golden Field Office Reading Room The Golden Field Office was designated a Department of Energy (DOE) field office in December 1992 to support the development and commercialization of renewable energy and energy-efficient technologies. As a field office within DOE's Energy Efficiency and Renewable Energy Office, Golden's mission is to award grants and manage contracts for clean energy projects, facilitate research and

  1. Current Fiscal Year FOIA Requests received by Golden Field Office |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Current Fiscal Year FOIA Requests received by Golden Field Office Current Fiscal Year FOIA Requests received by Golden Field Office Golden Field Office Status of FOIA Requests Received -- Current Quarter FY'16, from the U.S. Department of Energy. PDF icon GFO Status of FOIA Requests Received More Documents & Publications Previous Fiscal Year FOIA Requests received by Golden Field Office Golden Annual FOIA Report Office of Information Resources (MA-90)

  2. Alternative Fuels Data Center: Golden Eagle Distributors Inc. to Convert

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Entire Fleet to CNG Golden Eagle Distributors Inc. to Convert Entire Fleet to CNG to someone by E-mail Share Alternative Fuels Data Center: Golden Eagle Distributors Inc. to Convert Entire Fleet to CNG on Facebook Tweet about Alternative Fuels Data Center: Golden Eagle Distributors Inc. to Convert Entire Fleet to CNG on Twitter Bookmark Alternative Fuels Data Center: Golden Eagle Distributors Inc. to Convert Entire Fleet to CNG on Google Bookmark Alternative Fuels Data Center: Golden Eagle

  3. False Pass Wind Resource Report

    Energy Savers [EERE]

    False Pass Wind Resource Report False Pass meteorological tower, view to the east, D. ... Eagle River, Alaska D r a f t 1 False Pass Wind Resource Report P a g e | 2 Summary The ...

  4. ARM - Campaign Instrument - pass

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govInstrumentspass Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign Instrument : Photoacoustic Soot Spectrometer (PASS) Instrument Categories Aerosols Campaigns Aerosol Life Cycle IOP at BNL [ Download Data ] Off Site Campaign : various, including non-ARM sites, 2011.06.01 - 2011.08.31 Carbonaceous Aerosol and Radiation Effects Study (CARES) Photo-Acoustic Aerosol Light Absorption and Scattering [ Download Data ] Off Site Campaign :

  5. Golden Pass, TX Natural Gas Liquefied Natural Gas Imports (price) from

    U.S. Energy Information Administration (EIA) Indexed Site

    Qatar (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's 7.90 5.36 -- -- --

  6. Golden Pass, TX Natural Gas Liquefied Natural Gas Imports (price) from

    U.S. Energy Information Administration (EIA) Indexed Site

    Qatar (Dollars per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 5.77 6.74 6.74 4.76 4.78

  7. SEMI-ANNUAL REPORTS FOR GOLDEN PASS PRODUCTS LLC - FE DKT. NO...

    Broader source: Energy.gov (indexed) [DOE]

    - GULF LNG LIQUEFACTION COMPANY, LLC - FE DKT. NO. 12-47-LNG - ORDER 3104 SEMI-ANNUAL REPORTS FOR SOUTHERN LNG COMPANY - FE DKT. NO. 12-54-LNG - ORDER 3106 Semi-annual Reports for...

  8. Office of Acquisition and Financial Assessment PIA, Golden Field Office |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Acquisition and Financial Assessment PIA, Golden Field Office Office of Acquisition and Financial Assessment PIA, Golden Field Office Office of Acquisition and Financial Assessment PIA, Golden Field Office PDF icon Office of Acquisition and Financial Assessment PIA, Golden Field Office More Documents & Publications Integrated Safety Management Workshop Registration, PIA, Idaho National Laboratory Occupational Medicine - Assistant PIA, Idaho National Laboratory E-IDR

  9. 2012 Annual Planning Summary for Golden Field Office

    Broader source: Energy.gov [DOE]

    The ongoing and projected Environmental Assessments and Environmental Impact Statements for 2012 and 2013 within Golden Field Office.

  10. Federal Energy Management Program Golden Field Office Contacts | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Energy Golden Field Office Contacts Federal Energy Management Program Golden Field Office Contacts The following field contacts at the U.S. Department of Energy's Golden Field Office support the Federal Energy Management Program (FEMP). FEMP staff contact information is also available. Wayne Latham Energy Savings Performance Contract (ESPC) Contracting Officer 720-356-1507

  11. Multiple pass laser amplifier system

    DOE Patents [OSTI]

    Brueckner, Keith A.; Jorna, Siebe; Moncur, N. Kent

    1977-01-01

    A laser amplification method for increasing the energy extraction efficiency from laser amplifiers while reducing the energy flux that passes through a flux limited system which includes apparatus for decomposing a linearly polarized light beam into multiple components, passing the components through an amplifier in delayed time sequence and recombining the amplified components into an in phase linearly polarized beam.

  12. Golden Reading Room: NEPA Categorical Exclusions | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    NEPA Categorical Exclusions Golden Reading Room: NEPA Categorical Exclusions Categorical Exclusion Determinations issued by Golden Field Office. DOCUMENTS AVAILABLE FOR DOWNLOAD May 10, 2016 CX-100608 Categorical Exclusion Determination Supplemental Notice of Proposed Rulemaking (SNOPR) for Energy Conservation Standards for Residential Conventional Cooking Products RIN 1904-AD15 CX(s) Applied: B5.1 EERE-Buildings Technology Program Date: 05/10/2016 Location(s): Nationwide Office(s): Golden Field

  13. Categorical Exclusion Determinations: Golden Field Office | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Categorical Exclusion Determinations: Golden Field Office Categorical Exclusion Determinations: Golden Field Office Categorical Exclusion Determinations issued by Golden Field Office. DOCUMENTS AVAILABLE FOR DOWNLOAD May 10, 2016 CX-100608 Categorical Exclusion Determination Supplemental Notice of Proposed Rulemaking (SNOPR) for Energy Conservation Standards for Residential Conventional Cooking Products RIN 1904-AD15 CX(s) Applied: B5.1 EERE-Buildings Technology Program Date:

  14. Golden Beach, Florida: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    it. Golden Beach is a town in Miami-Dade County, Florida. It falls under Florida's 20th congressional district.12 References US Census Bureau Incorporated place and...

  15. ORISE: Helping California Prepare for Emergencies through Golden...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Golden Guardian ORISE helps California Governor's Office of Emergency Services plan series ... and more than 37,000,000 people, California is at risk for earthquakes, floods, ...

  16. Golden Fuel Systems formerly Greasel Conversions Inc | Open Energy...

    Open Energy Info (EERE)

    Fuel Systems formerly Greasel Conversions Inc Jump to: navigation, search Name: Golden Fuel Systems (formerly Greasel Conversions Inc) Place: Drury, Montana Zip: 65638 Sector:...

  17. Golden State Holding Group Corporation | Open Energy Information

    Open Energy Info (EERE)

    Holding Group Corporation Jump to: navigation, search Name: Golden State Holding Group Corporation Place: Beijing Municipality, China Product: Beijing-based developer and...

  18. Golden State Renewable Energy Corporation | Open Energy Information

    Open Energy Info (EERE)

    Renewable Energy Corporation Jump to: navigation, search Name: Golden State Renewable Energy Corporation Place: Beijing, Beijing Municipality, China Zip: 100101 Sector: Biomass,...

  19. Golden State Baotou Renewable Energy Ltd | Open Energy Information

    Open Energy Info (EERE)

    Baotou Renewable Energy Ltd Jump to: navigation, search Name: Golden State (Baotou) Renewable Energy Ltd Place: Baotou, Inner Mongolia Autonomous Region, China Sector: Wind energy...

  20. Golden Hills Solar Power Plant | Open Energy Information

    Open Energy Info (EERE)

    Hills Solar Power Plant Facility Golden Hills Solar Sector Solar Facility Type Photovoltaic Developer PowerWorks Location Alameda County, California Coordinates 37.6016892,...

  1. Golden's Bridge, New York: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Golden's Bridge, New York: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 41.290749, -73.67395 Show Map Loading map... "minzoom":false,"mappin...

  2. Golden Valley Electric Association- Sustainable Natural Alternative Power (SNAP) Program

    Broader source: Energy.gov [DOE]

    Golden Valley Electric Association's (GVEA) SNAP program encourages members to install renewable energy generators and connect them to the utility's electrical distribution system by offering an...

  3. Golden Reading Room: Office of Acquisition Documents, Better...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Below are electronic versions of Golden Field Office Reading Room documents that were created after November 1, 1996, per the requirements of the Electronic Freedom of Information ...

  4. Golden Reading Room: Office of Acquisition Documents, Sole of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Below are electronic versions of Golden Field Office Reading Room documents that were created after November 1, 1996, per the requirements of the Electronic Freedom of Information ...

  5. Golden Reading Room: Office of Acquisition Documents, Small Purchases |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Small Purchases Golden Reading Room: Office of Acquisition Documents, Small Purchases Below are electronic versions of Golden Field Office Reading Room documents that were created after November 1, 1996, per the requirements of the Electronic Freedom of Information Act Amendment of 1996. Most documents are available in Adobe Acrobat Portable Document Format (PDF). Small Purchases

  6. Previous Fiscal Year FOIA Requests received by Golden Field Office

    Broader source: Energy.gov [DOE]

    Golden Field Office Status of FOIA Requests Received – Previous Fiscal Year, from the U.S. Department of Energy This document provides a listing of all FOIA requests received by the Golden Field Office in the past fiscal year, including a description of the FOIA request and the resolution of the FOIA request.

  7. Sabine Pass LNG Terminal | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Sabine Pass LNG Terminal Sabine Pass LNG Terminal Sabine Pass LNG Terminal Long-Term Contract Information and Registrations at U.S. LNG Export Facilities Filing Date Type (1) ...

  8. Golden Eagle Territories and Ecology at Site 300

    SciTech Connect (OSTI)

    Fratanduono, M.

    2015-09-29

    Garcia and Associates (GANDA) was contracted by the Lawrence Livermore National Laboratory (LLNL) to collect information on golden eagle (Aquila chrysaetos) use of Site 300. During 2014, we conducted surveys at Site 300 and for an area including a 10-mile radius of Site 300. Those surveys documented 42 golden eagle territories including two territories that overlapped with Site 300. These were named ‘Tesla’ and ‘Linac Road’. In 2015, we conducted surveys to refine the territory boundaries of golden eagle territories that overlapped with Site 300 and to document eagle activity at Site 300.

  9. STATEMENT OF CONSIDERATIONS REQUEST BY GOLDEN PHOTON INC. FOR...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    REQUEST BY GOLDEN PHOTON INC. FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN RIGHTS UNDER ... Inc., has petitioned for an Advance Waiver of Patent Rights under NREL Subcontract No. ...

  10. Golden Valley Electric Association- Commercial Lighting Retrofit Rebate Program

    Broader source: Energy.gov [DOE]

    Business $ense is a Golden Valley Electric Association (GVEA) program designed to increase the efficiency with which energy is used on GVEA's system. It provides rebates of up to $20,000 to...

  11. A golden anniversary for space-based treaty verification

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A golden anniversary for space-based treaty verification Fifty years ago this month, LANL ... Los Alamos is commemorating 50 years of space-based arms treaty verification efforts this ...

  12. Golden Reading Room: FOIA Requester Service Centers and Public Liaisons |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy FOIA Requester Service Centers and Public Liaisons Golden Reading Room: FOIA Requester Service Centers and Public Liaisons U.S. Department of Energy http://energy.gov/management/foia-contacts

  13. Golden Reading Room: Environmental Assessments | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Environmental Assessments Golden Reading Room: Environmental Assessments Below are electronic versions of Golden Field Office Reading Room documents that were created after November 1, 1996, per the requirements of the Electronic Freedom of Information Act Amendment of 1996. Most documents are available in Adobe Acrobat Portable Document Format (PDF). DOCUMENTS AVAILABLE FOR DOWNLOAD January 11, 2016 EA-2020: Draft Environmental Assessment Energy Efficiency Standards for New Federal Low-Rise

  14. Golden Reading Room: FINAL Environmental Impact Statements | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy FINAL Environmental Impact Statements Golden Reading Room: FINAL Environmental Impact Statements Below are electronic versions of Golden Field Office Reading Room documents that were created after November 1, 1996, per the requirements of the Electronic Freedom of Information Act Amendment of 1996. Most documents are available in Adobe Acrobat Portable Document Format (PDF). Final Environmental Impact Statement for the Proposed Abengoa Biorefinery Project, Hugoton, Stevens County,

  15. Golden Reading Room: FOIA Frequently Requested Documents | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Frequently Requested Documents Golden Reading Room: FOIA Frequently Requested Documents Below are electronic versions of Golden Field Office Reading Room documents that were created after November 1, 1996, per the requirements of the Electronic Freedom of Information Act Amendment of 1996. Most documents are available in Adobe Acrobat Portable Document Format (PDF). DE-EE0002884 Sapphire Energy GO-12-043 Redacted Sapphire FOIA DE-EE0002877 Recovery Act Definitized Subcontract No.

  16. Golden Reading Room: FOIA Proactive Disclosures and Contracts | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of Energy Proactive Disclosures and Contracts Golden Reading Room: FOIA Proactive Disclosures and Contracts Below are electronic versions of Golden Field Office Reading Room documents that were created after November 1, 1996, per the requirements of the Electronic Freedom of Information Act Amendment of 1996. Most documents are available in Adobe Acrobat Portable Document Format (PDF). 2013 Solar Decathlon Information Click on this link for updates: Solar Decathlon Information. Alliance for

  17. Golden Reading Room: Office of Acquisition Documents, Better Buildings

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Initiative Support Services | Department of Energy Better Buildings Initiative Support Services Golden Reading Room: Office of Acquisition Documents, Better Buildings Initiative Support Services Below are electronic versions of Golden Field Office Reading Room documents that were created after November 1, 1996, per the requirements of the Electronic Freedom of Information Act Amendment of 1996. Most documents are available in Adobe Acrobat Portable Document Format (PDF). DE-SOL-0005538

  18. Golden Reading Room: Office of Acquisition Documents, Sole of Limited

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Source Justifications | Department of Energy Sole of Limited Source Justifications Golden Reading Room: Office of Acquisition Documents, Sole of Limited Source Justifications Below are electronic versions of Golden Field Office Reading Room documents that were created after November 1, 1996, per the requirements of the Electronic Freedom of Information Act Amendment of 1996. Most documents are available in Adobe Acrobat Portable Document Format (PDF). Sole of Limited Source Justificati

  19. Golden Reading Room: NREL Environmental and NEPA Documents | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy NREL Environmental and NEPA Documents Golden Reading Room: NREL Environmental and NEPA Documents Below are electronic versions of Golden Field Office Reading Room documents that were created after November 1, 1996, per the requirements of the Electronic Freedom of Information Act Amendment of 1996. Most documents are available in Adobe Acrobat Portable Document Format (PDF). NREL Annual Environmental Performance Reports (Annual Site Environmental Reports) Every year NREL prepares an

  20. Golden Reading Room: Other NREL Documents | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Other NREL Documents Golden Reading Room: Other NREL Documents Below are electronic versions of Golden Field Office Reading Room documents that were created after November 1, 1996, per the requirements of the Electronic Freedom of Information Act Amendment of 1996. Most documents are available in Adobe Acrobat Portable Document Format (PDF). National Renewable Energy Laboratory 10 Year Site Plan FY 2007 - FY 2018 Director's Discretionary Research and Development Program, Annual Report FY 2007

  1. Alternative Fuels Data Center: Golden Eagle Delivers Beer With Natural Gas

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Trucks Golden Eagle Delivers Beer With Natural Gas Trucks to someone by E-mail Share Alternative Fuels Data Center: Golden Eagle Delivers Beer With Natural Gas Trucks on Facebook Tweet about Alternative Fuels Data Center: Golden Eagle Delivers Beer With Natural Gas Trucks on Twitter Bookmark Alternative Fuels Data Center: Golden Eagle Delivers Beer With Natural Gas Trucks on Google Bookmark Alternative Fuels Data Center: Golden Eagle Delivers Beer With Natural Gas Trucks on Delicious Rank

  2. Golden Reading Room: Freedom of Information Act (FOIA) | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Freedom of Information Act (FOIA) Golden Reading Room: Freedom of Information Act (FOIA) The Golden FOIA Office exists to execute the legal requirements of the Freedom of Information Act (5 U.S.C. § 552(a)(3)(A) (2006), amended by OPEN Government Act of 2007, Pub. L. No. 110175, 121 Stat. 2524). Enacted on July 4, 1966, and taking effect on one year later, the Freedom of Information Act provides that any person has a right, enforceable in court, to obtain access to federal agency

  3. A golden anniversary for space-based treaty verification

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A golden anniversary for space-based treaty verification A golden anniversary for space-based treaty verification Fifty years ago this month, LANL sensor technology lifted off into space to help verify that world Superpowers were abiding by the newly signed Limited Test Ban Treaty. October 22, 2013 Los Alamos National Laboratory researcher Richard Belian performs a final check of the Vela V-B satellite prior to its launch in April 1970. Vela V-B was the last of the Vela twin satellites launched

  4. 2011 Annual Planning Summary for Golden Field Office (GO) | Department of

    Energy Savers [EERE]

    Energy Golden Field Office (GO) 2011 Annual Planning Summary for Golden Field Office (GO) The ongoing and projected Environmental Assessments and Environmental Impact Statements for 2011 and 2012 within the Golden Field Office (GO) (See Energy Efficiency APS). PDF icon 2011 Annual Planning Summary for Golden Field Office (GO) More Documents & Publications 2012 Annual Planning Summary for Fossil Energy, National Energy Technology Laboratory, RMOTC, and Strategic Petroleum Reserve Field

  5. DOE Fuel Cell Pre-Solicitation Workshop Agenda, January 23-24, 2008, Golden, Colorado

    Broader source: Energy.gov [DOE]

    Agenda for the DOE Fuel Cell Pre-Solicitation Workshop Agenda, January 23-24, 2008, Golden, Colorado

  6. Technical Feasibility Assessment of LED Roadway Lighting on the Golden Gate Bridge

    SciTech Connect (OSTI)

    Tuenge, J. R.

    2012-09-01

    GATEWAY program report on the technical feasibility of LED roadway lighting on the Golden Gate Bridge in San Francisco, CA.

  7. Energy Department Authorizes Sabine Pass Liquefaction's Expansion...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Sabine Pass Liquefaction's Expansion Project to Export Liquefied Natural Gas Energy ... required by the National Environmental Policy Act, and when DOE has sufficient ...

  8. Photoacoustic Soot Spectrometer (PASS) Instrument Handbook (Technical...

    Office of Scientific and Technical Information (OSTI)

    The PASS instruments deployed by ARM can also simultaneously measure the scattered laser light at three wavelengths and therefore provide a direct measure of the single-scattering ...

  9. Photoacoustic Soot Spectrometer (PASS) Instrument Handbook

    SciTech Connect (OSTI)

    Dubey, M; Springston, S; Koontz, A; Aiken, A

    2013-01-17

    The photoacoustic soot spectrometer (PASS) measures light absorption by aerosol particles. As the particles pass through a laser beam, the absorbed energy heats the particles and in turn the surrounding air, which sets off a pressure wave that can be detected by a microphone. The PASS instruments deployed by ARM can also simultaneously measure the scattered laser light at three wavelengths and therefore provide a direct measure of the single-scattering albedo. The Operator Manual for the PASS-3100 is included here with the permission of Droplet Measurement Technologies, the instruments manufacturer.

  10. Patterson Pass Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    Wind Companies Developer International Wind Companies Energy Purchaser Pacific Gas & Electric Co Location Altamont Pass CA Coordinates 37.7347, -121.652 Show Map...

  11. Northern Pass Transmission Line Project Environmental Impact...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Northern Pass Transmission Line Project Environmental Impact Statement: Announcement of Change in Public Meeting Location: Federal Register Notice Volume 78, No. 181 - September ...

  12. WA_1994_003_GOLDEN_PHOTOCON_INC_Waiver_of_Domestic_and_Forei.pdf |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy WA_1994_003_GOLDEN_PHOTOCON_INC_Waiver_of_Domestic_and_Forei.pdf WA_1994_003_GOLDEN_PHOTOCON_INC_Waiver_of_Domestic_and_Forei.pdf PDF icon WA_1994_003_GOLDEN_PHOTOCON_INC_Waiver_of_Domestic_and_Forei.pdf More Documents & Publications WA_1995_030_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign.pdf WA_1993_033_GOLDEN_PHOTON_INC_Waiver_of_Domestic_and_Foreign.pdf WA_03_010_SHELL_SOLAR_INDUSTRIES_Waiver_of_Domestic_and_Fore.pdf

  13. Multifrequency, single pass free electron laser

    DOE Patents [OSTI]

    Szoke, Abraham (Fremont, CA); Prosnitz, Donald (Walnut Creek, CA)

    1985-01-01

    A method for simultaneous amplification of laser beams with a sequence of frequencies in a single pass, using a relativistic beam of electrons grouped in a sequence of energies corresponding to the sequence of laser beam frequencies. The method allows electrons to pass from one potential well or "bucket" to another adjacent bucket, thus increasing efficiency of trapping and energy conversion.

  14. PUBLIC ADMINISTRATION COLORADO GOLDEN FIELD OFFICE POC Karen Downs

    Energy Savers [EERE]

    PUBLIC ADMINISTRATION COLORADO GOLDEN FIELD OFFICE POC Karen Downs Telephone (720) 356-1269 Email karen.downs@go.doe.gov Police Protection 922120 Administration of Education Programs 923110 International Affairs 928120 DIST OF COLUMBIA HEADQUARTERS PROCUREMENT POC Michael Raizen Telephone (202) 287-1512 Email michael.raizen@hq.doe.gov Police Protection 922120 Administration of Education Programs 923110 Administration of Human Resource Programs (except Education, Public Health, and Veterans'

  15. Security Procedures for Golden Laboratories and Administration Offices |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NREL Security Procedures for Golden Laboratories and Administration Offices Visitors are required to show government-issued photo identification (for example driver's license, passport, or military ID). Upon arrival to NREL's South Table Mountain site, visitors are to drive up to the East Site Entrance Building window where Security staff will confirm they are on the expected visitor list. Visitors will receive a parking placard and should park in the Research Support Facility (RSF) Visitor

  16. Extracting Effective Higgs Couplings in the Golden Channel

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Chen, Yi; Vega-Morales, Roberto

    2014-04-08

    Kinematic distributions in Higgs decays to four charged leptons, the so called ‘golden channel, are a powerful probe of the tensor structure of its couplings to neutral electroweak gauge bosons. In this study we construct the first part of a comprehensive analysis framework designed to maximize the information contained in this channel in order to perform direct extraction of the various possible Higgs couplings. We first complete an earlier analytic calculation of the leading order fully differential cross sections for the golden channel signal and background to include the 4e and 4μ final states with interference between identical final states.more » We also examine the relative fractions of the different possible combinations of scalar-tensor couplings by integrating the fully differential cross section over all kinematic variables as well as show various doubly differential spectra for both the signal and background. From these analytic expressions we then construct a ‘generator level’ analysis framework based on the maximum likelihood method. Then, we demonstrate the ability of our framework to perform multi-parameter extractions of all the possible effective couplings of a spin-0 scalar to pairs of neutral electroweak gauge bosons including any correlations. Furthermore, this framework provides a powerful method for study of these couplings and can be readily adapted to include the relevant detector and systematic effects which we demonstrate in an accompanying study to follow.« less

  17. Message passing with parallel queue traversal

    DOE Patents [OSTI]

    Underwood, Keith D.; Brightwell, Ronald B.; Hemmert, K. Scott

    2012-05-01

    In message passing implementations, associative matching structures are used to permit list entries to be searched in parallel fashion, thereby avoiding the delay of linear list traversal. List management capabilities are provided to support list entry turnover semantics and priority ordering semantics.

  18. Senate Energy Committee Passes New Geothermal Legislation

    Broader source: Energy.gov [DOE]

    Senate Energy Committee moved the ball forward for geothermal energy by passing two important geothermal measures, S. 1142 and S. 1149, on December 15. "These two measures will support exploration drilling, expand geothermal research into heating uses, and expedite leasing and development," remarked GEA Executive Director Karl Gawell.

  19. Two former longtime employees pass away | The Ames Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    employees pass away Former Ames Laboratory metallurgy program chair John (Jack) Smith of Ames passed away Sept. 26 and long-time facilities plumber Pat Stowell of Boone,...

  20. EA-2036: Sabine Pass Liquefaction Project (design optimization...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    36: Sabine Pass Liquefaction Project (design optimization); Cameron Parish, Louisiana EA-2036: Sabine Pass Liquefaction Project (design optimization); Cameron Parish, Louisiana ...

  1. ARM - Campaign Instrument - pass-air

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govInstrumentspass-air Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign Instrument : Photoacoustic Soot Spectrometer- Airborne (PASS-AIR) Instrument Categories Aerosols, Airborne Observations Campaigns Carbonaceous Aerosol and Radiative Effects Study (CARES) [ Download Data ] McClellan AFB, Sacramento, CA, 2010.06.02 - 2010.06.28 Indirect and Semi-Direct Aerosol Campaign (ISDAC) [ Download Data ] North Slope Alaska, 2008.04.01 -

  2. Microsoft Word - Northern Pass Amended Application - FINAL

    Energy Savers [EERE]

    UNITED STATES OF AMERICA BEFORE THE DEPARTMENT OF ENERGY OFFICE OF ELECTRICITY DELIVERY AND ENERGY RELIABILITY NORTHERN PASS TRANSMISSION LLC DOCKET NO. PP-371 AMENDED APPLICATION JULY 1, 2013 i TABLE OF CONTENTS Page No. LIST OF EXHIBITS iii LIST OF ABBREVIATIONS iv INTRODUCTION 1 OVERVIEW OF AMENDMENTS TO APPLICATION 1 SECTION 1 - INFORMATION REGARDING THE APPLICANT 1.1 Legal Name of the Applicant 6 1.2 Legal Names of All Partners 6 1.3 Communications and Correspondence 7 1.4 Foreign Ownership

  3. Golden Sun Fujian Solar Technic Co Ltd GS Solar | Open Energy...

    Open Energy Info (EERE)

    Sun Fujian Solar Technic Co Ltd GS Solar Jump to: navigation, search Name: Golden Sun (Fujian) Solar Technic Co Ltd (GS-Solar) Place: Quanzhou, Fujian Province, China Zip: 362000...

  4. Two Nerds . . . One Love . . . and A Great Golden Ring | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Nerds . . . One Love . . . and A Great Golden Ring Two Nerds . . . One Love . . . and A Great Golden Ring August 17, 2011 - 4:26pm Addthis Two scientists got engaged in the Relativistic Heavy Ion Collider at Brookhaven National Laboratory in New York. | Video from The Daily Charles Rousseaux Charles Rousseaux Senior Communications Specialist (detailee) The work of the Energy Department has led to many scientific and technological breakthroughs. Today, we're highlighting a different

  5. Tribal Energy Program Review, Nov 17-19, 2003, Golden, CO.

    Energy Savers [EERE]

    Review Tribal Energy Program Review November 17 November 17 - - 20, 2003 20, 2003 Golden, Colorado Golden, Colorado National Renewable Energy Laboratory Operated for the U.S. Department of Energy by Midwest Research Institute * Battelle Major DOE National Laboratories Brookhaven Pacific Northwest Lawrence Berkeley Lawrence Livermore h h h h h INEEL National Renewable National Renewable Energy Laboratory Energy Laboratory Los Alamos Sandia Argonne Oak Ridge Defense Program Labs n Office of

  6. Implications of the Higgs discovery in the MSSM golden region.

    SciTech Connect (OSTI)

    Low, I.; Shalgar, S.; High Energy Physics; Northwestern Univ.

    2009-01-01

    If the lightest CP-even Higgs boson in the MSSM is discovered at the LHC, two measurements could be made simultaneously: the Higgs mass m{sub h} and the event rate B{sigma}(gg {yields} h {yields} {gamma}{gamma}). We study to what extent the combination of these two measurements would allow us to extract parameters in the stop mass matrix, including the off-diagonal mixing term, with a focus on the MSSM golden region where the stops are light and the mixing is large. Even though both the production cross-section and the decay amplitude are not sensitive to supersymmetric parameters outside of the stop sector, the branching ratio depends on the total decay width, which is dominated by the Higgs decay to b quarks and sensitive to both the pseudo-scalar mass m{sub A} and the supersymmetric Higgs mass {mu}. In the end we find m{sub A} is an important input in extracting the stop mass parameters, while a fair estimate of the off-diagonal mixing term could be obtained without prior knowledge of {mu}.

  7. National Wind Technology Center sitewide, Golden, CO: Environmental assessment

    SciTech Connect (OSTI)

    1996-11-01

    The National Renewable Energy Laboratory (NREL), the nation`s primary solar and renewable energy research laboratory, proposes to expand its wind technology research and development program activities at its National Wind Technology Center (NWTC) near Golden, Colorado. NWTC is an existing wind energy research facility operated by NREL for the US Department of Energy (DOE). Proposed activities include the construction and reuse of buildings and facilities, installation of up to 20 wind turbine test sites, improvements in infrastructure, and subsequent research activities, technology testing, and site operations. In addition to wind turbine test activities, NWTC may be used to support other NREL program activities and small-scale demonstration projects. This document assesses potential consequences to resources within the physical, biological, and human environment, including potential impacts to: air quality, geology and soils, water resources, biological resources, cultural and historic resources, socioeconomic resources, land use, visual resources, noise environment, hazardous materials and waste management, and health and safety conditions. Comment letters were received from several agencies in response to the scoping and predecisional draft reviews. The comments have been incorporated as appropriate into the document with full text of the letters contained in the Appendices. Additionally, information from the Rocky Flats Environmental Technology Site on going sitewide assessment of potential environmental impacts has been reviewed and discussed by representatives of both parties and incorporated into the document as appropriate.

  8. Quantum Monte Carlo by message passing

    SciTech Connect (OSTI)

    Bonca, J.; Gubernatis, J.E.

    1993-01-01

    We summarize results of quantum Monte Carlo simulations of the degenerate single-impurity Anderson model using the impurity algorithm of Hirsch and Fye. Using methods of Bayesian statistical inference, coupled with the principle of maximum entropy, we extracted the single-particle spectral density from the imaginary-time Green's function. The variations of resulting spectral densities with model parameters agree qualitatively with the spectral densities predicted by NCA calculations. All the simulations were performed on a cluster of 16 IBM R6000/560 workstations under the control of the message-passing software PVM. We described the trivial parallelization of our quantum Monte Carlo code both for the cluster and the CM-5 computer. Other issues for effective parallelization of the impurity algorithm are also discussed.

  9. Quantum Monte Carlo by message passing

    SciTech Connect (OSTI)

    Bonca, J.; Gubernatis, J.E.

    1993-05-01

    We summarize results of quantum Monte Carlo simulations of the degenerate single-impurity Anderson model using the impurity algorithm of Hirsch and Fye. Using methods of Bayesian statistical inference, coupled with the principle of maximum entropy, we extracted the single-particle spectral density from the imaginary-time Green`s function. The variations of resulting spectral densities with model parameters agree qualitatively with the spectral densities predicted by NCA calculations. All the simulations were performed on a cluster of 16 IBM R6000/560 workstations under the control of the message-passing software PVM. We described the trivial parallelization of our quantum Monte Carlo code both for the cluster and the CM-5 computer. Other issues for effective parallelization of the impurity algorithm are also discussed.

  10. Two antenna, two pass interferometric synthetic aperture radar

    DOE Patents [OSTI]

    Martinez, Ana; Doerry, Armin W.; Bickel, Douglas L.

    2005-06-28

    A multi-antenna, multi-pass IFSAR mode utilizing data driven alignment of multiple independent passes can combine the scaling accuracy of a two-antenna, one-pass IFSAR mode with the height-noise performance of a one-antenna, two-pass IFSAR mode. A two-antenna, two-pass IFSAR mode can accurately estimate the larger antenna baseline from the data itself and reduce height-noise, allowing for more accurate information about target ground position locations and heights. The two-antenna, two-pass IFSAR mode can use coarser IFSAR data to estimate the larger antenna baseline. Multi-pass IFSAR can be extended to more than two (2) passes, thereby allowing true three-dimensional radar imaging from stand-off aircraft and satellite platforms.

  11. Venture Global Calcasieu Pass, LLC - (Formerly Venture Global...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Venture Global Calcasieu Pass, LLC - (Formerly Venture Global LNG, LLC) - 14-88-LNG Venture Global Calcasieu Pass, LLC - (Formerly Venture Global LNG, LLC) - 14-88-LNG The Office ...

  12. Order 3669: Sabine Pass Liquefaction, LLC | Department of Energy

    Energy Savers [EERE]

    69: Sabine Pass Liquefaction, LLC Order 3669: Sabine Pass Liquefaction, LLC FINAL OPINION AND ORDER GRANTING LONG-TERM, MULTI-CONTRACT AUTHORIZATION TO EXPORT LIQUEFIED NATURAL GAS BY VESSEL FROM THE SABINE PASS LNG TERMINAL LOCATED IN THE CAMERON PARISH, LOUISIANA, TO NON-FREE TRADE AGREEMENT NATIONS Based on a review of the complete record and for the reasons set forth below, DOE/FE has concluded that the opponents of Sabine Pass Liquefaction, LLC's applications to export LNG from its

  13. Design of the polarization multi-pass Thomson scattering system

    SciTech Connect (OSTI)

    Yasuhara, R.; Yamada, I.; Kawahata, K.; Funaba, H. [National Institute for Fusion Science, 322-6 Oroshi-cho, Toki, Gifu 509-5292 (Japan); Yoshikawa, M.; Morimoto, M.; Shima, Y.; Kohagura, J.; Sakamoto, M.; Nakashima, Y.; Imai, T. [Plasma Research Center, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan); Minami, T. [Institute of Advanced Energy, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan)

    2012-10-15

    A novel configuration of the multi-pass Thomson scattering (TS) system is proposed to improve the time resolution and accuracy of electron temperature measurements by use of a polarization control technique. This configuration can realize a perfect coaxial multi-passing at each pass, and the number of round trips is not limited by the optical configuration. To confirm the feasibility of the new method, we installed this system in the GAMMA 10 plasma system. As a result, the integrated scattering signal of the double-pass configuration is about two times larger than that of the single-pass configuration. These results are in good agreement with the design.

  14. Bird Mortaility at the Altamont Pass Wind Resource Area: March 1998--September 2001

    SciTech Connect (OSTI)

    Smallwood, K. S.; Thelander, C. G.

    2005-09-01

    Over the past 15 years, research has shown that wind turbines in the Altamont Pass Wind Resource Area (APWRA) kill many birds, including raptors, which are protected by the Migratory Bird Treaty Act (MBTA), the Bald and Golden Eagle Protection Act, and/or state and federal Endangered Species Acts. Early research in the APWRA on avian mortality mainly attempted to identify the extent of the problem. In 1998, however, the National Renewable Energy Laboratory (NREL) initiated research to address the causal relationships between wind turbines and bird mortality. NREL funded a project by BioResource Consultants to perform this research directed at identifying and addressing the causes of mortality of various bird species from wind turbines in the APWRA.With 580 megawatts (MW) of installed wind turbine generating capacity in the APWRA, wind turbines there provide up to 1 billion kilowatt-hours (kWh) of emissions-free electricity annually. By identifying and implementing new methods and technologies to reduce or resolve bird mortality in the APWRA, power producers may be able to increase wind turbine electricity production at the site and apply similar mortality-reduction methods at other sites around the state and country.

  15. The Golden-Thompson inequality: Historical aspects and random matrix applications

    SciTech Connect (OSTI)

    Forrester, Peter J. Thompson, Colin J.

    2014-02-15

    The Golden-Thompson inequality, Tr?(e{sup A+B}) ? Tr?(e{sup A}e{sup B}) for A, B Hermitian matrices, appeared in independent works by Golden and Thompson published in 1965. Both of these were motivated by considerations in statistical mechanics. In recent years the Golden-Thompson inequality has found applications to random matrix theory. In this article, we detail some historical aspects relating to Thompson's work, giving in particular a hitherto unpublished proof due to Dyson, and correspondence with Plya. We show too how the 2 2 case relates to hyperbolic geometry, and how the original inequality holds true with the trace operation replaced by any unitarily invariant norm. In relation to the random matrix applications, we review its use in the derivation of concentration type lemmas for sums of random matrices due to Ahlswede-Winter, and Oliveira, generalizing various classical results.

  16. MHK Projects/Deception Pass Tidal Energy Hydroelectric Project...

    Open Energy Info (EERE)

    Deception Pass Tidal Energy Hydroelectric Project < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... "minzoom":false,"mappingservice"...

  17. EIS-0510: Calcasieu Pass Project, Cameron Parish, Louisiana ...

    Energy Savers [EERE]

    environmental impacts of the Calcasieu Pass Project, a proposed liquefied natural gas (LNG) export terminal in Cameron Parish, Louisiana. DOE is a cooperating agency in preparing...

  18. Issuance, Control and Use of Badges, Passes, and Credentials

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    1988-12-19

    The change provides clarification of badges and passes used for escorted visitors into DOE facilities. Chg 1, dated 12-19-88

  19. EA-1845: Sabine Pass Liquefaction Project, Cameron County, LA

    Broader source: Energy.gov [DOE]

    DOE participated as a cooperating agency with the Federal Energy Regulatory Commission (FERC) in preparing an EA for the Sabine Pass Liquefaction Project to analyze the potential environmental impacts associated with applications submitted by Sabine Pass Liquefaction, LLC, and Sabine Pass LNG, L.P., to FERC and to DOE’s Office of Fossil Energy (FE) seeking authorization to site, construct, and operate liquefaction and export facilities at the existing Sabine Pass LNG Terminal in Cameron Parish, Louisiana. DOE adopted FERC’s EA and issued a finding of no significant impact on August 7, 2012.

  20. Consider Installing Turbulators on Two- and Three-Pass Firetube...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Consider Installing Turbulators on Two- and Three-Pass Firetube Boilers Firetube Boilers The packaged fretube boiler is the most common boiler design used to provide heating or ...

  1. Consider Installing Turbulators on Two- and Three-Pass Firetube...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PDF icon Consider Installing Turbulators on Two- and Three-Pass Firetube Boilers (January 2012) More Documents & Publications Clean Boiler Waterside Heat Transfer Surfaces CIBO ...

  2. Issuance, Control and Use of Badges, Passes and Credentials

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    1988-02-03

    The order establishes and prescribes DOE policies and procedures for the issuance. control. and use of badges. passes, and credentials. Cancels DOE 5631.3.

  3. Performance of a double pass solar air collector

    SciTech Connect (OSTI)

    Ramani, B.M.; Gupta, Akhilesh; Kumar, Ravi

    2010-11-15

    Double pass counter flow solar air collector with porous material in the second air passage is one of the important and attractive design improvement that has been proposed to improve the thermal performance. This paper presents theoretical and experimental analysis of double pass solar air collector with and without porous material. A mathematical model has been developed based on volumetric heat transfer coefficient. Effects of various parameters on the thermal performance and pressure drop characteristics have been discussed. Comparison of results reveals that the thermal efficiency of double pass solar air collector with porous absorbing material is 20-25% and 30-35% higher than that of double pass solar air collector without porous absorbing material and single pass collector respectively. (author)

  4. Eagle Pass, TX Natural Gas Pipeline Exports to Mexico (Million...

    U.S. Energy Information Administration (EIA) Indexed Site

    Million Cubic Feet) Eagle Pass, TX Natural Gas Pipeline Exports to Mexico (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 159 155 151 135 135 127 118 ...

  5. Feasibility of Tital and Ocean Current Energy in False Pass,...

    Energy Savers [EERE]

    Monty Worthington Director of Project Development - Alaska Feasibility of Tidal and Ocean Current Energy in False Pass, Aleutian Islands, Alaska (DE-EE0005624.000) Presented to DOE ...

  6. Sabine Pass Liquefaction, LLC- Dkt. No 15-63-LNG

    Broader source: Energy.gov [DOE]

    The Office of Fossil Energy gives notice of receipt of an Application filed on April 20, 2015, by Sabine Pass Liquefaction, LLC (SPL), seeking long-term multi-contract authorization to export...

  7. Order 3669: Sabine Pass Liquefaction, LLC | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    FROM THE SABINE PASS LNG TERMINAL LOCATED IN THE CAMERON PARISH, LOUISIANA, TO NON-FREE TRADE AGREEMENT NATIONS Based on a review of the complete record and for the reasons set...

  8. Waste Treatment Facility Passes Federal Inspection, Completes Final

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Milestone, Begins Startup | Department of Energy Treatment Facility Passes Federal Inspection, Completes Final Milestone, Begins Startup Waste Treatment Facility Passes Federal Inspection, Completes Final Milestone, Begins Startup April 23, 2012 - 12:00pm Addthis Media Contact Erik Simpson, 208-390-9464 Danielle Miller, 208-526-5709 The Idaho site today initiated the controlled, phased startup of a new waste treatment facility scheduled to begin treating 900,000 gallons of radioactive liquid

  9. General Atomics (GA) | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Atomics (GA) Subscribe to RSS - General Atomics (GA) General Atomics Image: General Atomics (GA) The Scorpion's Strategy: "Catch and Subdue" Read more about The Scorpion's...

  10. EA-0995: Drum Storage Facility for Interim Storage of Materials Generated by Environmental Restoration Operations, Golden, Colorado

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts of the proposal to construct and operate a drum storage facility at the U.S. Department of Energy's Rocky Flats Environmental Technology Site in Golden,...

  11. Golden Reading Room: Request for Proposals (RFP) Number DE-RP36-07GO97036 |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Request for Proposals (RFP) Number DE-RP36-07GO97036 Golden Reading Room: Request for Proposals (RFP) Number DE-RP36-07GO97036 RFP DE-RP36-07GO97036 -- Management and Operation of the National Renewable Energy Laboratory Alliance Prime Contract No. DE-AC36-08GO28308, through modification 1033

  12. Validation of the G-PASS code : status report.

    SciTech Connect (OSTI)

    Vilim, R. B.; Nuclear Engineering Division

    2009-03-12

    Validation is the process of determining whether the models in a computer code can describe the important phenomena in applications of interest. This report describes past work and proposed future work for validating the Gas Plant Analyzer and System Simulator (G-PASS) code. The G-PASS code was developed for simulating gas reactor and chemical plant system behavior during operational transients and upset events. Results are presented comparing code properties, individual component models, and integrated system behavior against results from four other computer codes. Also identified are two experiment facilities nearing completion that will provide additional data for individual component and integrated system model validation. The main goal of the validation exercise is to ready a version of G-PASS for use as a tool in evaluating vendor designs and providing guidance to vendors on design directions in nuclear-hydrogen applications.

  13. Standards for message-passing in a distributed memory environment

    SciTech Connect (OSTI)

    Walker, D.W.

    1992-08-01

    This report presents a summary of the main ideas presented at the First CRPC Work-shop on Standards for Message Passing in a Distributed Memory Environment, held April 29-30, 1992, in Williamsburg, Virginia. This workshop attracted 68 attendees including representative from major hardware and software vendors, and was the first in a series of workshops sponsored by the Center for Research on Parallel Computation. The aim of this series of workshops is to develop and implement a standard for message passing on distributed memory concurrent computers, thereby making it easier to develop efficient, portable application codes for such machines. The report discusses the main issues raised in the CRPC workshop, and describes proposed desirable features of a message passing standard for distributed memory environments.

  14. Passing the baton | Y-12 National Security Complex

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Passing the baton Passing the baton Posted: February 18, 2014 - 4:57pm Taking on special assignments is part of most jobs, and it's something Chuck Spencer did when he accepted the role as B&W Y-12's president and general manager in August 2012. "What I thought would be a 3-6 month job turned into 18 months," Spencer said. On Feb. 1, Dave Richardson assumed the role as president and general manager of B&W Y-12. "Dave has over 33 years of diverse nuclear operations and

  15. East Avenue Truck Inspection Patterson Pass Road Vasco Road

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vasco Road Thunderbird Lane Greenville Road Greenville Road Directions to the Sandia/CA - Visitor Badge Office Interstate 580 - Oakland/San Francisco, Traveling Eastbound * Exit Vasco Road South * Continue traveling South on Vasco Road for 1.1 miles * Turn left onto Patterson Pass Road * Continue traveling East on Patterson Pass Road for 1.2 miles * Turn right onto Greenville Road * Continue traveling South on Greenville Road for 1.1 miles * Turn right onto East Avenue * Follow the road as it

  16. Extensible message passing application development and debugging with Python

    SciTech Connect (OSTI)

    Beazley, D.M.; Lomdahl, P.S.

    1996-09-19

    The authors describe how they have parallelized Python, an interpreted object oriented scripting language, and used it to build an extensible message-passing C/C++ applications for the CM-5, Cray T3D, and Sun multiprocessor servers running MPI. Using a parallelized Python interpreter, it is possible to interact with large-scale parallel applications, rapidly prototype new features, and perform application specific debugging. It is even possible to write message passing programs in Python itself. The authors describe some of the tools they have developed to extend Python and applications of this approach.

  17. Message Passing for Linux Clusters with Gigabit Ethernet Mesh Connections

    SciTech Connect (OSTI)

    Jie Chen; Chip Watson; Robert Edwards; Weizhen Mao

    2005-04-01

    Multiple copper-based commodity Gigabit Ethernet (GigE) interconnects (adapters) on a single host can lead to Linux clusters with mesh/torus connections without using expensive switches and high speed network interconnects (NICs). However traditional message passing systems based on TCP for GigE will not perform well for this type of clusters because of the overhead of TCP for multiple GigE links. In this paper, we present two os-bypass message passing systems that are based on a modified M-VIA (an implementation of VIA specification) for two production GigE mesh clusters: one is constructed as a 4 x 8 x 8 (256 nodes) torus and has been in production use for a year; the other is constructed as a 6 x 8 x 8 (384 nodes) torus and was deployed recently. One of the message passing systems targets to a specific application domain and is called QMP and the other is an implementation of MPI specification 1.1. The GigE mesh clusters using these two message passing systems achieve about 18.5 {micro}s half-way round trip latency and 400MB/s total bandwidth, which compare reasonably well to systems using specialized high speed adapters in a switched architecture at much lower costs.

  18. Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    SciTech Connect (OSTI)

    M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

    2005-01-26

    Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency ({eta}{sub TPV}) and a power density (PD) of {eta}{sub TPV} = 19% and PD=0.58 W/cm{sup 2} were measured for T{sub radiator} = 950 C and T{sub diode} = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be {eta}{sub TPV} = 26% and PD = 0.75 W/cm{sup 2}. These limits are extended to {eta}{sub TPV} = 30% and PD = 0.85W/cm{sup 2} if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are {approx}10% lower than the predicted semi-empirical limit to open circuit voltage for a device having absorbing substrate; the voltages are {approx}17% below that for an Auger-limited device having back surface reflector and two-pass optical design.

  19. The Super Efficient Refrigerator Program: Case study of a Golden Carrot program

    SciTech Connect (OSTI)

    Eckert, J B

    1995-07-01

    The work in this report was conducted by the Analytic Studies Division (ASD) of the National Renewable Energy Laboratory (NREL) for the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy, Office of Building Technologies. This case study describes the development and implementation of the Super Efficient Refrigerator Program (SERP), which awarded $30 million to the refrigerator manufacturer that developed and commercialized a refrigerator that exceeded 1993 federal efficiency standards by at least 25%. The program was funded by 24 public and private utilities. As the first Golden Carrot program to be implemented in the United States, SERP was studied as an example for future `market-pull` efforts.

  20. CPV Cell Characterization Following One-Year Exposure in Golden, Colorado: Preprint

    SciTech Connect (OSTI)

    Bosco, N.; Kurtz, S.

    2014-08-01

    A CPV module containing 30 III-V multijunction cells was operated on?sun for one year in Golden, Colorado. Each cell was characterized prior to and following exposure. A module power degradation of 10% was observed and found to be a result as an overall decrease in cell short circuit current and the presence of at least one shunted cell. A positive correlation between initial shunt current and an increase in shunt current following exposure was also found. Cell exfoliation was also observed and found to be coincident with the presence of water and/or charring of the cell package due to an off-sun event.

  1. Sabine Pass, LA Liquefied Natural Gas Exports (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    (Million Cubic Feet) Sabine Pass, LA Liquefied Natural Gas Exports (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2016 3,284 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 04/29/2016 Next Release Date: 05/31/2016 Referring Pages: U.S.

  2. Pulse Analysis Spectroradiometer System (PASS) Software - Energy Innovation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Portal Energy Analysis Energy Analysis Find More Like This Return to Search Pulse Analysis Spectroradiometer System (PASS) Software National Renewable Energy Laboratory Contact NREL About This Technology Publications: PDF Document Publication Pulse Analysis Spectroradiometer System for Measuring the Spectral Distribution of Flash Solar Simulators http://www.nrel.gov/docs/fy08osti/43652.pdf (576 KB) Technology Marketing SummaryFlashing artificial light sources are used extensively in

  3. Thermal efficiency of single-pass solar air collector

    SciTech Connect (OSTI)

    Ibrahim, Zamry; Ibarahim, Zahari; Yatim, Baharudin; Ruslan, Mohd Hafidz

    2013-11-27

    Efficiency of a finned single-pass solar air collector was studied. This paper presents the experimental study to investigate the effect of solar radiation and mass flow rate on efficiency. The fins attached at the back of absorbing plate to improve the thermal efficiency of the system. The results show that the efficiency is increased proportional to solar radiation and mass flow rate. Efficiency of the collector archived steady state when reach to certain value or can be said the maximum performance.

  4. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Mreke, Janina Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  5. Incentive Pass-through for Residential Solar Systems in California

    Broader source: Energy.gov [DOE]

    The deployment of solar photovoltaic (PV) systems has grown rapidly over the last decade, partly because of various government incentives. In the United States, those established in California are among the largest and longest-running incentives. Building on past research, this report addresses the still-unanswered question: to what degree have the direct PV incentives in California been passed along from installers to consumers? This report addresses this question by carefully examining the residential PV market in California and applying both a structural-modeling approach and a reduced-form regression analysis to estimate the incentive pass-through rate. The results suggest an average pass-through rate of direct incentives of nearly 100%, but with regional differences among California counties. While these results could have multiple explanations, they suggest a relatively competitive market and well-functioning subsidy program. Further analysis is required to determine whether similar results broadly apply to other states, to other customer segments, to all third-party-owned PV systems, or to all forms of financial incentives for solar.

  6. One pass core design of a super fast reactor

    SciTech Connect (OSTI)

    Liu, Qingjie; Oka, Yoshiaki

    2013-07-01

    One pass core design for Supercritical-pressure light water-cooled fast reactor (Super FR) is proposed. The whole core is cooled with upward flow in one through flow pattern like PWR. Compared with the previous two pass core design; this new flow pattern can significantly simplify the core concept. Upper core structure, coolant flow scheme as well as refueling procedure are as simple as in PWR. In one pass core design, supercritical-pressure water is at approximately 25.0 MPa and enters the core at 280 C. degrees and is heated up in one through flow pattern upwardly to the average outlet temperature of 500 C. degrees. Great density change in vertical direction can cause significant axial power offset during the cycle. Meanwhile, Pu accumulated in the UO{sub 2} fuel blanket assemblies also introduces great power increase during cycle, which requires large amount of flow for heat removal and makes the outlet temperature of blanket low at the beginning of equilibrium cycle (BOEC). To deal with these issues, some MOX fuel is applied in the bottom region of the blanket assembly. This can help to mitigate the power change in blanket due to Pu accumulation and to increase the outlet temperature of the blanket during cycle. Neutron transport and thermohydraulics coupled calculation shows that this design can satisfy the requirement in the Super FR principle for both 500 C. degrees outlet temperature and negative coolant void reactivity. (authors)

  7. A compact double-pass Raman backscattering amplifier/compressor

    SciTech Connect (OSTI)

    Ren, J.; Li, S.; Morozov, A.; Suckewer, S.; Yampolsky, N. A.; Malkin, V. M.; Fisch, N. J.

    2008-05-15

    The enhancement of stimulated Raman backscattering (SRBS) amplification was demonstrated by introducing a plasma density gradient along the pump and the seed interaction path and by a novel double-pass design. The energy transfer efficiency was significantly improved to a level of 6.4%. The seed pulse was amplified by a factor of more than 20 000 from the input in a 2 mm long plasma, which also exceeded the intensity of the pump pulse by 2 orders of magnitude. This was accompanied by very effective pulse compression, from 500 fs to 90 fs in the first pass measurements and in the second pass down to approximately 50 fs, as it is indicated by the energy-pulse duration relation. Further improvements to the energy transfer efficiency and the SRBS performance by extending the region of resonance is also discussed where a uniform {approx}4 mm long plasma channel for SRBS was generated by using two subsequent laser pulses in an ethane gas jet.

  8. PIA - WEB iPASS System DOE PIA | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    iPASS System DOE PIA PIA - WEB iPASS System DOE PIA PIA - WEB iPASS System DOE PIA PDF icon PIA - WEB iPASS System DOE PIA More Documents & Publications PIA - INL Education Programs Business Enclave Integrated Safety Management Workshop Registration, PIA, Idaho National Laboratory Occupational Medicine - Assistant PIA, Idaho National Laboratory

  9. Bald and Golden Eagle Protection Act (16 USC §§ 668–668d) and Related Regulations (50 CFR Part 22)

    Broader source: Energy.gov [DOE]

    The Bald and Golden Eagle Act (16 U.S.C. 668-668c) prohibits anyone from taking, possessing, or transporting a bald eagle (Haliaeetus leucocephalus) or golden eagle (Aquila chrysaetos), or the parts, nests, or eggs of such birds without prior authorization.

  10. GA SNC Solar | Open Energy Information

    Open Energy Info (EERE)

    GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and Sierra Nevada Corp. References: GA-SNC...

  11. EIS-0510: Calcasieu Pass Project, Cameron Parish, Louisiana

    Broader source: Energy.gov [DOE]

    The Federal Energy Regulatory Commission (FERC) is preparing an EIS that analyzes the potential environmental impacts of the Calcasieu Pass Project, a proposed liquefied natural gas (LNG) export terminal in Cameron Parish, Louisiana. DOE is a cooperating agency in preparing the EIS. DOE, Office of Fossil Energy, has an obligation under Section 3 of the Natural Gas Act to authorize the import and export of natural gas, including LNG, unless it finds that the import or export is not consistent with the public interest.

  12. EA-1983: Sabine Pass Liquefaction Expansion Project, Cameron Parish, Louisiana

    Broader source: Energy.gov [DOE]

    The Federal Energy Regulatory Commission (FERC) is preparing an EA for a proposal to expand the existing Sabine Pass Liquefied Natural Gas Terminal in Cameron Parish, and to extend an associated existing pipeline system in Cameron, Calcasieu, Beauregard, Allen, and Evangeline Parishes in Louisiana. DOE is a cooperating agency in preparing the EA. DOE, Office of Fossil Energy, has an obligation under Section 3 of the Natural Gas Act to authorize the import and export of natural gas, including LNG, unless it finds that the import or export is not consistent with the public interest.

  13. EIS-0463: Northern Pass Transmission Line Project, New Hampshire

    Broader source: Energy.gov [DOE]

    This EIS will evaluate the potential environmental impacts from DOE’s proposed Federal action of granting a Presidential permit to Northern Pass Transmission, LLC, to construct, operate, maintain, and connect a new electric transmission line across the U.S.-Canada border in northern New Hampshire. The U.S. Environmental Protection Agency (Region 1), the U.S. Forest Service, White Mountain National Forest, the U.S. Army Corps of Engineers, New England District, and the New Hampshire Office of Energy and Planning are cooperating agencies in the preparation of this EIS.

  14. A cryogenic circulating advective multi-pass absorption cell

    SciTech Connect (OSTI)

    Stockett, M. H.; Lawler, J. E. [Department of Physics, University of Wisconsin, 1150 University Avenue, Madison, Wisconsin 53706 (United States)

    2012-03-15

    A novel absorption cell has been developed to enable a spectroscopic survey of a broad range of polycyclic aromatic hydrocarbons (PAH) under astrophysically relevant conditions and utilizing a synchrotron radiation continuum to test the still controversial hypothesis that these molecules or their ions could be carriers of the diffuse interstellar bands. The cryogenic circulating advective multi-pass absorption cell resembles a wind tunnel; molecules evaporated from a crucible or injected using a custom gas feedthrough are entrained in a laminar flow of cryogenically cooled buffer gas and advected into the path of the synchrotron beam. This system includes a multi-pass optical White cell enabling absorption path lengths of hundreds of meters and a detection sensitivity to molecular densities on the order of 10{sup 7} cm{sup -3}. A capacitively coupled radio frequency dielectric barrier discharge provides ionized and metastable buffer gas atoms for ionizing the candidate molecules via charge exchange and the Penning effect. Stronger than expected clustering of PAH molecules has slowed efforts to record gas phase PAH spectra at cryogenic temperatures, though such clusters may play a role in other interstellar phenomena.

  15. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  16. Public Hearings on Northern Pass Draft EIS Announced

    Broader source: Energy.gov [DOE]

    The U.S. Department of Energy (DOE) has announced public hearings to receive comments on the Draft EIS (DOE/EIS–0463). The Draft EIS evaluates the potential environmental impacts of DOE’s proposed Federal action of issuing a Presidential permit to Northern Pass LLC (the Applicant) to construct, operate, maintain, and connect a new electric transmission line across the U.S./Canada border in northern New Hampshire. For the convenience of the public, DOE in conjunction with the New Hampshire SEC will conduct public hearings to provide the public with information on the proposed project and an opportunity for the public to provide oral and written comments and to ask questions concerning the project on March 7 and March 10, 2016.

  17. Amended Application for Presidential Permit OE Docket No: PP–371 Northern Pass Transmission LLC

    Broader source: Energy.gov [DOE]

    Northern Pass Transmission LLC (Northern Pass) has submitted an amended application for a Presidential permit to construct, operate, maintain, and connect an electric transmission line across the United States border with Canada.

  18. PIA - WEB iPASS System DOE PIA | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    PIA - WEB iPASS System DOE PIA PDF icon PIA - WEB iPASS System DOE PIA More Documents & Publications PIA - INL Education Programs Business Enclave Integrated Safety Management ...

  19. SEMI-ANNUAL REPORTS FOR VENTURE GLOBAL CALCASIEU PASS, LLC (formerly...

    Broader source: Energy.gov (indexed) [DOE]

    Venture Global Calcasieu Pass, LLC - FE Dkt. No. - 15-25-LNG Venture Global Calcasieu Pass, LLC - (Formerly Venture Global LNG, LLC) - 14-88-LNG Comments, Protests and ...

  20. SEMI-ANNUAL REPORTS FOR MAIN PASS ENERGY HUB, LLC - FE DKT. NO...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    MAIN PASS ENERGY HUB, LLC - FE DKT. NO. 12-114-LNG - ORDER 3220 SEMI-ANNUAL REPORTS FOR MAIN PASS ENERGY HUB, LLC - FE DKT. NO. 12-114-LNG - ORDER 3220 PDF icon April 2014 PDF icon ...

  1. Sabine Pass Liquefaction, LLC FE Dkt. No 15-171-LNG

    Broader source: Energy.gov [DOE]

    The Office of Fossil Energy (FE) of the Department of Energy (DOE) gives notice of receipt of an application (Application), filed on November 6, 2015, by Sabine Pass Liquefaction, LLC (Sabine Pass)...

  2. SEMI-ANNUAL REPORTS FOR SABINE PASS LIQUEFACTION, LLC - FE DKT...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    SEMI-ANNUAL REPORTS FOR SABINE PASS LIQUEFACTION, LLC - FE DKT. NO. 10-85-LNG; 10-111-LNG; ... More Documents & Publications SEMI-ANNUAL REPORTS FOR SABINE PASS LIQUEFACTION, LLC - FE ...

  3. SEMI-ANNUAL REPORTS FOR SABINE PASS LIQUEFACTION, LLC - FE DKT...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    SEMI-ANNUAL REPORTS FOR SABINE PASS LIQUEFACTION, LLC - FE DKT. NO. 13-131-LNG - ORDER 3384 PDF icon April 2014 More Documents & Publications SEMI-ANNUAL REPORTS FOR SABINE PASS ...

  4. Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments from Mary Bearor

    Broader source: Energy.gov [DOE]

    Application from Northern Pass Transmission to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border.

  5. Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments from Joseph Keenan

    Broader source: Energy.gov [DOE]

    Application from Northern Pass Transmission to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border.

  6. Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Nicholas Karakoudas

    Broader source: Energy.gov [DOE]

    Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border.

  7. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Ann Vennerbeck | Department of Energy Ann Vennerbeck Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Ann Vennerbeck Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Vennerbeck_NorthernPass_Intervention.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Roy Kjendal Application for

  8. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Anne Moschella | Department of Energy Anne Moschella Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Anne Moschella Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Anne_NorthernPass_Intervention.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Ann Vennerbeck Application for

  9. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Bruce Adami | Department of Energy Bruce Adami Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Bruce Adami Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Adami_NorthernPass_Intervention.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Ann Vennerbeck Application for Presidential

  10. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Courtney Kearley | Department of Energy Courtney Kearley Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Courtney Kearley Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Kearley_NorthernPass_Intervention.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Rana Klug Application for

  11. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Jim Cannon | Department of Energy Jim Cannon Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Jim Cannon Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Cannon_NorthernPass_Intervention.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Ann Vennerbeck Application for Presidential

  12. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from John Doane Sr. | Department of Energy John Doane Sr. Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from John Doane Sr. Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Doane_NorthernPass_Intervention.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Anne Moschella Application for

  13. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Lindsey Coombs | Department of Energy Lindsey Coombs Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Lindsey Coombs Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Coombs_NorthernPass_Intervention.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Ann Vennerbeck Application for

  14. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Lorna Rose | Department of Energy Lorna Rose Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Lorna Rose Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Rose_NorthernPass_Intervention.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Ann Vennerbeck Application for Presidential

  15. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Maureen Quinn | Department of Energy Maureen Quinn Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Maureen Quinn Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Quinn_NorthernPass_Intervention.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Anne Moschella Application for

  16. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Michelle Kleindienst | Department of Energy Michelle Kleindienst Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Michelle Kleindienst Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Kleindienst_NorthernPass_Intervention.pdf More Documents & Publications Application for Presidential Permit OE Docket No: PP-371 Northern Pass Transmission: Comments

  17. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Pamela Hanglin | Department of Energy Hanglin Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Pamela Hanglin Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Hanglin_NorthernPass_Intervention.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Pamela Hayes Application for

  18. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Pamela Hayes | Department of Energy Hayes Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Pamela Hayes Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Hayes_NorthernPass_Intervention.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Lorna Rose Application for Presidential Permit

  19. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Rana Klug | Department of Energy Rana Klug Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Rana Klug Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Klug_NorthernPass_Intervention.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Courtney Kearley Application for Presidential

  20. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Robert Cote | Department of Energy Robert Cote Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Robert Cote Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Cote_NorthernPass_Intervention.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Ann Vennerbeck Application for Presidential

  1. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Roy Kjendal | Department of Energy Roy Kjendal Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Roy Kjendal Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon kjendal_NorthernPass_Intervention.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Ann Vennerbeck Application for

  2. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Serita Frey | Department of Energy Serita Frey Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Serita Frey Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Frey_NorthernPass_Intervention.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Ann Vennerbeck Application for Presidential

  3. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Taras Kucman | Department of Energy Taras Kucman Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Taras Kucman Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Kucman_NorthernPass_Intervention.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Michelle Kleindienst Application for

  4. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from The Weeks Lancaster Trust | Department of Energy The Weeks Lancaster Trust Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from The Weeks Lancaster Trust Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S, - Canada Border. PDF icon Northern Pass WLT Filing.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments

  5. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Vickie Bedard | Department of Energy Vickie Bedard Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Vickie Bedard Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Bedard_NorthernPass_Intervention.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Bruce Adami Application for

  6. Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Updated Opinion of Counsel

    Broader source: Energy.gov [DOE]

    Application from Northern Pass Transmission to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border.

  7. Application for Presidential Permit OE Docket No. PP-371 Northern Pass

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Transmission LLC | Department of Energy Transmission LLC Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission LLC Amended application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon PP-371 Northern Pass Amended Application 08-31-15.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments from Linda Upham

  8. Energy Department Authorizes Sabine Pass Liquefaction’s Expansion Project to Export Liquefied Natural Gas

    Office of Energy Efficiency and Renewable Energy (EERE)

    A press release on the final authorization to allow Sabine Pass Liquefaction, LLC to export liquefied natural gas (LNG).

  9. Best Management Practice #9: Single-Pass Cooling Equipment | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy 9: Single-Pass Cooling Equipment Best Management Practice #9: Single-Pass Cooling Equipment Single-pass or once-through cooling systems provide an opportunity for significant water savings. In these systems, water is circulated once through a piece of equipment and is then disposed down the drain. Types of equipment that typically use single-pass cooling include CAT scanners, degreasers, hydraulic equipment, condensers, air compressors, welding machines, vacuum pumps, ice machines,

  10. Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments from Fred Brownson

    Broader source: Energy.gov [DOE]

    Application from Northern Pass Transmission to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border.

  11. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  12. Proceedings of the 2002 U.S. DOE Hydrogen and Fuel Cells Annual Program/Lab R&D Review, May 6-10, 2002, Golden, Colorado.

    Broader source: Energy.gov [DOE]

    Proceedings of the US DOE Hydrogen Program, the Fuel Cells for Transportation Program, and the Fuels for Fuel Cells Program inaugural combined Annual Program/Lab R&D Review held May 6-10, 2002 in Golden, Colorado.

  13. Testing a GaAs cathode in SRF gun

    SciTech Connect (OSTI)

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-03-28

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating gradient of the RF guns, potentially offering a long lived cathode with very low emittance. Testing this concept requires preparation of the cathode, transportation to the SRF gun and evaluation of the performance of the cathode and the gun at cryogenic temperatures. In our work at BNL, we successfully activated the bulk GaAs in the preparation chamber. The highest quantum efficient was 10% at 532 nm that fell to 0.5% after 100 hours. We explored three different ways to activate the GaAs. We verified that the GaAs photocathode remains stable for 30 hours in a 10{sup -11} Torr vacuum. Passing the photocathode through the low 10{sup -9} Torr transfer section in several seconds caused the QE to drop to 0.8%. The photocathode with 0.8% QE can be tested for the SRF gun. The gun and beam pipe were prepared and assembled. After baking at 200 C baking, the vacuum of the gun and beam pipe can sustain a low 10{sup -11} Torr at room temperature. The final test to extract electrons from the gun is ongoing. In this paper, we discuss our progress with this SRF gun and the results of the photocathode in preparation chamber and in magnet transfer line.

  14. Sound generation by a centrifugal pump at blade passing frequency

    SciTech Connect (OSTI)

    Morgenroth, M.; Weaver, D.S.

    1996-12-01

    This paper reports the results of an experimental study of the pressure pulsations produced by a centrifugal volute pump at its blade passing frequency and their amplification by acoustic resonance in a connected piping system. Detailed measurements were made of the pressure fluctuations in the piping as a function of pump speed and flow rate. A semi-empirical model was used to separate acoustic standing waves from hydraulic pressure fluctuations. The effects of modifying the cut-water geometry were also studied, including the use of flow visualization to observe the flow behavior at the cut-water. The results suggest that the pump may act as an acoustic pressure or velocity source, depending on the flow rate. At conditions of acoustic resonance, the pump acted as an open termination of the piping, i.e., as a node in the acoustic pressure standing waves. Rounding the cut-water had the effect of reducing the amplitude of acoustic resonance, apparently because of the ability of the stagnation point to move and thereby reduce the vorticity generated. A notable example of this acoustic resonance in the Primary Heat Transport (PHT) system at Ontario Hydro`s Darlington nuclear power station.

  15. Message passing with a limited number of DMA byte counters

    DOE Patents [OSTI]

    Blocksome, Michael; Chen, Dong; Giampapa, Mark E.; Heidelberger, Philip; Kumar, Sameer; Parker, Jeffrey J.

    2011-10-04

    A method for passing messages in a parallel computer system constructed as a plurality of compute nodes interconnected as a network where each compute node includes a DMA engine but includes only a limited number of byte counters for tracking a number of bytes that are sent or received by the DMA engine, where the byte counters may be used in shared counter or exclusive counter modes of operation. The method includes using rendezvous protocol, a source compute node deterministically sending a request to send (RTS) message with a single RTS descriptor using an exclusive injection counter to track both the RTS message and message data to be sent in association with the RTS message, to a destination compute node such that the RTS descriptor indicates to the destination compute node that the message data will be adaptively routed to the destination node. Using one DMA FIFO at the source compute node, the RTS descriptors are maintained for rendezvous messages destined for the destination compute node to ensure proper message data ordering thereat. Using a reception counter at a DMA engine, the destination compute node tracks reception of the RTS and associated message data and sends a clear to send (CTS) message to the source node in a rendezvous protocol form of a remote get to accept the RTS message and message data and processing the remote get (CTS) by the source compute node DMA engine to provide the message data to be sent.

  16. General Atomics (GA) Fusion News: A New Spin on Understanding...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Atomics (GA) Fusion News: A New Spin on Understanding Plasma Confinement American Fusion News Category: General Atomics (GA) Link: General Atomics (GA) Fusion News: A New ...

  17. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  18. Making manufacturers responsible for recycling: Passing the garbage buck

    SciTech Connect (OSTI)

    Chilton, K.; Boerner, C.; Ansehl-Fellow, J.

    1995-09-01

    During a meeting with the Conference of Mayor and the National Association of Counties in April of 1993, Senator Max Baucus, then-Chairman of the Senate Environment and Public Works Committee, unveiled his solution to America`s {open_quotes}garbage crisis{close_quotes}. Modeled after Germany`s draconian {open_quotes}green dot{close_quotes} recycling program, the Senator`s solution rested on a principle which he called {open_quotes}manufacturers` responsibility for the life-cycle of a product.{close_quotes} {open_quotes}Anyone who sells a product,{close_quotes} Senator Baucus noted, {open_quotes}should also be responsible for the product when it becomes waste{close_quotes}. Other variations on this life-cycle stewardship concept were a central element of Congress`s failed attempts in 1992-1993 to reauthorize the Resource Conservation and Recovery Act (RCRA). Likewise, on July 11, 1994 the United States Conference of Mayors` Energy and Environment Committee passed a resolution calling on Congress to study the concept of {open_quotes}shared responsibility for waste reduction{close_quotes}. The committee cited the virtues of Western Europe`s systems of manufacturers` responsibility and claimed that a U.S. version would create jobs, promote new environmental technology and {open_quotes}result in the emergence of entire new industries{close_quotes}. This report describes a recycling program in Germany in which the manaufacturers are responsible for waste collection. The overall waste reduction benefits are described.

  19. Sitewide Environmental Assessment for the National Renewable Energy Laboratory, Golden, Colorado

    SciTech Connect (OSTI)

    Not Available

    1993-05-04

    The Solar Energy Research, Development, and Demonstration Act of 1974 authorized a federal program to develop solar energy as a viable source of the nation`s future energy needs. Under this authority, the National Renewable Energy Laboratory (NREL) was created as a laboratory of the Department of Energy (DOE) to research a number of renewable energy possibilities. The laboratory conducts its operations both in government-owned facilities on the NREL South Table Mountain (STM) Site near Golden, Colorado, and in a number of leased facilities, particularly the Denver West Office Park. NREL operations include research in energy technologies, and other areas of national environmental and energy technology interest. Examples of these technologies include electricity from sunlight with solar cells (photovoltaics); energy from wind (windmills or wind turbines); conversion of plants and plant products (biomass) into liquid fuels (ethanol and methanol); heat from the sun (solar thermal) in place of wood, oil, gas, coal and other forms of heating; and solar buildings. NREL proposes to continue and expand the present R&D efforts in C&R energy by making infrastructure improvements and constructing facilities to eventually consolidate the R&D and associated support activities at its STM Site. In addition, it is proposed that operations continue in current leased space at the present levels of activity until site development is complete. The construction schedule proposed is designed to develop the site as rapidly as possible, dependent on Congressional funding, to accommodate not only the existing R&D that is being conducted in leased facilities off-site but to also allow for the 20-year projected growth. Impacts from operations currently conducted off-site are quantified and added to the cumulative impacts of the STM site. This environmental assessment provides information to determine the severity of impacts on the environment from the proposed action.

  20. Consider Installing Turbulators on Two- and Three-Pass Firetube Boilers |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Turbulators on Two- and Three-Pass Firetube Boilers Consider Installing Turbulators on Two- and Three-Pass Firetube Boilers This tip sheet outlines the benefits of turbulators on firetube boilers as part of optimized steam systems. STEAM TIP SHEET #25 PDF icon Consider Installing Turbulators on Two- and Three-Pass Firetube Boilers (January 2012) More Documents & Publications Clean Boiler Waterside Heat Transfer Surfaces CIBO Energy Efficiency Handbook Reverse Osmosis

  1. Application for Presidential Permit OE Docket No. PP-371 Northern Pass

    Energy Savers [EERE]

    Transmission: Comments from Alice Peatman | Department of Energy Alice Peatman Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments from Alice Peatman Application from Northern Pass Transmission to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Alice_Peatman_Comments.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments

  2. Application for Presidential Permit OE Docket No. PP-371 Northern Pass

    Energy Savers [EERE]

    Transmission: Comments from City of Concord - James Kennedy | Department of Energy City of Concord - James Kennedy Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments from City of Concord - James Kennedy Application from Northern Pass Transmission to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon City of Concord_Northern Pass_Intervention.pdf More Documents & Publications Application for

  3. Application for Presidential Permit OE Docket No. PP-371 Northern Pass

    Energy Savers [EERE]

    Transmission: Comments from Elisha Gray | Department of Energy Elisha Gray Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments from Elisha Gray Application from Northern Pass Transmission to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon ElishaGray_PP-371Comment.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments

  4. Application for Presidential Permit OE Docket No. PP-371 Northern Pass

    Energy Savers [EERE]

    Transmission: Comments from Larry Rappaport | Department of Energy Larry Rappaport Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments from Larry Rappaport Application from Northern Pass Transmission to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon LarryRappaport_PP-371Comments.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass

  5. Application for Presidential Permit OE Docket No. PP-371 Northern Pass

    Energy Savers [EERE]

    Transmission: Comments from Lee Ann Moulder | Department of Energy Lee Ann Moulder Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments from Lee Ann Moulder Application from Northern Pass Transmission to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon LeeAnnMoulder_PP-371Comments.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass

  6. Application for Presidential Permit OE Docket No. PP-371 Northern Pass

    Energy Savers [EERE]

    Transmission: Comments from Linda Upham | Department of Energy Linda Upham Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments from Linda Upham Application from Northern Pass Transmission to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon LindaUpham_Pp-371 Comments.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments

  7. Application for Presidential Permit OE Docket No. PP-371 Northern Pass

    Energy Savers [EERE]

    Transmission: Comments from Michael Marino | Department of Energy Michael Marino Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments from Michael Marino Application from Northern Pass Transmission to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon MichaelMarino_PP-371Comments.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission:

  8. Application for Presidential Permit OE Docket No. PP-371 Northern Pass

    Energy Savers [EERE]

    Transmission: Comments from Pamela Martin | Department of Energy Pamela Martin Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments from Pamela Martin Application from Northern Pass Transmission to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon PamelaMartin_PP-371Comments.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission:

  9. Application for Presidential Permit OE Docket No. PP-371 Northern Pass

    Energy Savers [EERE]

    Transmission: Comments from Robert Martin | Department of Energy Robert Martin Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments from Robert Martin Application from Northern Pass Transmission to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon RobertMartin_PP-371Comments.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission:

  10. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Campton Conservation Commission | Department of Energy Campton Conservation Commission Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Campton Conservation Commission Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S, - Canada Border. PDF icon CCCNH Motion to Intervene.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

  11. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from James Kennedy | Department of Energy James Kennedy Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from James Kennedy Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Comments from James Kennedy.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments from City of Concord - James

  12. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Stephen Buzzell and Lelah Sullivan | Department of Energy Stephen Buzzell and Lelah Sullivan Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Stephen Buzzell and Lelah Sullivan Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Sullivan_NorthernPass_Intervention.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371

  13. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from The Nature Conservancy | Department of Energy The Nature Conservancy Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from The Nature Conservancy Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Comments from The Nature Conservancy.pdf More Documents & Publications Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from James

  14. Application for presidential permit OE Docket No. PP-371 Northern Pass

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Transmission LLC | Department of Energy LLC Application for presidential permit OE Docket No. PP-371 Northern Pass Transmission LLC Pursuant to Executive Order (EO) No. 10485, as amended by EO 12038, and 10 C.F.R. § 205.320 et seq., Northern Pass Transmission LLC (Northern Pass or the Applicant) hereby applies to the United States Department of Energy (DOE) for a Presidential Permit authorizing the construction, connection, operation, and maintenance of facilities for the transmission of

  15. Application for presidential permit OE Docket No. PP-371 Northern Pass

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Transmission LLC: Letter of MOU Cancellation | Department of Energy Letter of MOU Cancellation Application for presidential permit OE Docket No. PP-371 Northern Pass Transmission LLC: Letter of MOU Cancellation March 7, 2011 Northern Pass Transmission LLC appreciates the cooperation of the Department of Energy ("DOE") in negotiating the Memorandum of Understanding ("MOU") among DOE, Northern Pass and Normandeau Associates Inc. We nevertheless have concluded that it is

  16. 2-M Probe At Astor Pass Area (Kratt, Et Al., 2010) | Open Energy...

    Open Energy Info (EERE)

    Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Exploration Activity: 2-M Probe At Astor Pass Area (Kratt, Et Al., 2010) Exploration Activity Details Location...

  17. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  18. UNITED STATES OF AMERICA FEDERAL ENERGY REGULATORY COMMISSION

    Energy Savers [EERE]

    Golden Pass Products, LLC and Docket Nos. CP14-517-000 Golden Pass Pipeline, LLC CP14-518-000 NOTICE OF AVAILABILITY OF THE DRAFT ENVIRONMENTAL IMPACT STATEMENT FOR THE PROPOSED GOLDEN PASS LNG EXPORT PROJECT (March 25, 2016) The staff of the Federal Energy Regulatory Commission (FERC or Commission) has prepared a draft environmental impact statement (EIS) for the Golden Pass Liquefied Natural Gas (LNG) Export Project, proposed by Golden Pass Products, LLC and Golden Pass Pipeline, LLC

  19. Application for Presidential Permit OE Docket No. PP-371 Northern Pass

    Energy Savers [EERE]

    Transmission: Comments from Fran Buteau | Department of Energy Fran Buteau Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments from Fran Buteau Application from Northern Pass Transmission to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Fran_Buteau

  20. Application for Presidential Permit OE Docket No. PP-371 Northern Pass

    Energy Savers [EERE]

    Transmission: Comments from John Brodeer | Department of Energy John Brodeer Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments from John Brodeer Application from Northern Pass Transmission to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon John_Brodeer

  1. Application for Presidential Permit OE Docket No. PP-371 Northern Pass

    Energy Savers [EERE]

    Transmission: Comments from Karen Skurka | Department of Energy Karen Skurka Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments from Karen Skurka Application from Northern Pass Transmission to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Karen_Skurka

  2. Application for Presidential Permit OE Docket No. PP-371 Northern Pass

    Energy Savers [EERE]

    Transmission: Comments from Nancy Rheinhardt | Department of Energy Nancy Rheinhardt Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments from Nancy Rheinhardt Application from Northern Pass Transmission to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Nancy_Rheinhardt

  3. Application for Presidential Permit OE Docket No. PP-371 Northern Pass

    Energy Savers [EERE]

    Transmission: Comments from National Park Service - Wendy Jannsen | Department of Energy National Park Service - Wendy Jannsen Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments from National Park Service - Wendy Jannsen Application from Northern Pass Transmission to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon National Park Service_Janssen

  4. Application for Presidential Permit OE Docket No. PP-371 Northern Pass

    Energy Savers [EERE]

    Transmission: Comments from Roy Stever | Department of Energy Roy Stever Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments from Roy Stever Application from Northern Pass Transmission to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Stever

  5. Application for Presidential Permit OE Docket No. PP-371 Northern Pass

    Energy Savers [EERE]

    Transmission: Comments from State Senator Jeanie Forrester | Department of Energy State Senator Jeanie Forrester Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments from State Senator Jeanie Forrester Application from Northern Pass Transmission to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon State Senator Forrester

  6. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Erick Berglund, Jr. | Department of Energy Erick Berglund, Jr. Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Erick Berglund, Jr. Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Berglund Jr

  7. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Gina Neily | Department of Energy Gina Neily Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Gina Neily Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Neily

  8. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Steve Nogueira | Department of Energy Steve Nogueira Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Steve Nogueira Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Noguiera

  9. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Susan Seitz | Department of Energy Susan Seitz Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Susan Seitz Application from Northern Pass to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border. PDF icon Seitz

  10. SEMI-ANNUAL REPORTS FOR SABINE PASS LIQUEFACTION, LLC - FE DKT...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    SABINE PASS LIQUEFACTION, LLC - FE DKT. NO. 10-85-LNG; 10-111-LNG; 13-121-LNG; 14-31-LNG; 13-30-LNG; 13-42-LNG; 14-92-LNG SEMI-ANNUAL REPORTS FOR SABINE PASS LIQUEFACTION, LLC - FE ...

  11. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  12. Technical Feasibility Assessment of LED Roadway Lighting on the Golden Gate Bridge

    SciTech Connect (OSTI)

    Tuenge, Jason R.

    2012-09-01

    Subsequent to preliminary investigations by the Golden Gate Bridge Highway & Transportation District (GGB), in coordination with Pacific Gas & Electric (PG&E), the GATEWAY Demonstration program was asked to evaluate the technical feasibility of replacing existing roadway lighting on the bridge with products utilizing LED technology. GGB and PG&E also indicated interest in induction (i.e., electrodeless fluorescent) technology, since both light source types feature rated lifetimes significantly exceeding those of the existing high-pressure sodium (HPS) and low-pressure sodium (LPS) products. The goal of the study was to identify any solutions which would reduce energy use and maintenance without compromising the quantity or quality of existing illumination. Products used for roadway lighting on the historic bridge must be installed within the existing amber-lensed shoebox-style luminaire housings. It was determined that induction technology does not appear to represent a viable alternative for the roadway luminaires in this application; any energy savings would be attributable to a reduction in light levels. Although no suitable LED retrofit kits were identified for installation within existing luminaire housings, several complete LED luminaires were found to offer energy savings of 6-18%, suggesting custom LED retrofit kits could be developed to match or exceed the performance of the existing shoeboxes. Luminaires utilizing ceramic metal halide (CMH) were also evaluated, and some were found to offer 28% energy savings, but these products might actually increase maintenance due to the shorter rated lamp life. Plasma technology was evaluated, as well, but no suitable products were identified. Analysis provided in this report was completed in May 2012. Although LED technologies are expected to become increasingly viable over time, and product mock-ups may reveal near-term solutions, some options not currently considered by GGB may ultimately merit evaluation. For example, it would be preferable in terms of performance to simply replace existing luminaires (some of which may already be nearing end of life) with fully-integrated LED or CMH luminaires rather than replacing internal components. Among other benefits, this would allow reputable manufacturers to offer standard warranties for their products. Similarly, the amber lenses might be reformulated such that they do not render white light sources in a greenish cast, thereby allowing the use of off-the-shelf LED or CMH products. Last, it should be noted that the existing amber-lensed shoeboxes bear no daytime resemblance to the LPS luminaires originally used to light the roadway.

  13. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  14. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  15. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  16. US SoAtl GA Site Consumption

    U.S. Energy Information Administration (EIA) Indexed Site

    GA Site Consumption million Btu $0 $500 $1,000 $1,500 $2,000 $2,500 US SoAtl GA Expenditures dollars ALL ENERGY average per household (excl. transportation) 0 4,000 8,000 12,000 16,000 US SoAtl GA Site Consumption kilowatthours $0 $300 $600 $900 $1,200 $1,500 $1,800 US SoAtl GA Expenditures dollars ELECTRICITY ONLY average per household * Site energy consumption (89.5 million Btu) and energy expenditures per household ($2,067) in Georgia are similar to the U.S. household averages. * Per

  17. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  18. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs...

    Office of Scientific and Technical Information (OSTI)

    irradiated AlGaNGaN HEMTs This content will become publicly available on August 26, 2016 Title: Degradation mechanisms of 2 MeV proton irradiated AlGaNGaN HEMTs Authors: ...

  19. Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN

    Office of Scientific and Technical Information (OSTI)

    HEMTs. (Conference) | SciTech Connect Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Citation Details In-Document Search Title: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Abstract not provided. Authors: Biedermann, Laura Butler ; Kaplar, Robert James ; Marinella, Matthew ; Zavadil, Kevin Robert ; Atcitty, Stanley ; Sun, Min ; Palacios, Tomas Publication Date: 2012-10-01 OSTI Identifier: 1111316 Report Number(s):

  20. Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN

    Office of Scientific and Technical Information (OSTI)

    HEMTs. (Conference) | SciTech Connect Conference: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Citation Details In-Document Search Title: Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs. Abstract not provided. Authors: DasGupta, Sandeepan ; Biedermann, Laura Butler ; Kaplar, Robert ; Marinella, Matthew ; Zavadil, Kevin Robert ; Atcitty, Stanley ; Sun, Min ; Palacios, Tomas Publication Date: 2013-02-01 OSTI Identifier:

  1. Survival Rates of Juvenile Salmonids Passing Through the Bonneville Dam and Spillway in 2008

    SciTech Connect (OSTI)

    Ploskey, Gene R.; Weiland, Mark A.; Faber, Derrek M.; Deng, Zhiqun; Johnson, Gary E.; Hughes, James S.; Zimmerman, Shon A.; Monter, Tyrell J.; Cushing, Aaron W.; Wilberding, Matthew C.; Durham, Robin E.; Townsend, R. L.; Skalski, J. R.; Buchanan, Rebecca A.; Kim, Jina; Fischer, Eric S.; Meyer, Matthew M.; McComas, Roy L.; Everett, Jason

    2009-12-28

    This report describes a 2008 acoustic telemetry survival study conducted by the Pacific Northwest National Laboratory for the Portland District of the U.S. Army Corps of Engineers. The study estimated the survival of juvenile Chinook salmon and steelhead passing Bonneville Dam (BON) and its spillway. Of particular interest was the relative survival of smolts detected passing through end spill bays 1-3 and 16-18, which had deep flow deflectors immediately downstream of spill gates, versus survival of smolts passing middle spill bays 4-15, which had shallow flow deflectors.

  2. A Statement from U.S. Secretary of Energy Ernest Moniz on the Passing of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    the First U.S. Secretary of Energy James Schlesinger | Department of Energy on the Passing of the First U.S. Secretary of Energy James Schlesinger A Statement from U.S. Secretary of Energy Ernest Moniz on the Passing of the First U.S. Secretary of Energy James Schlesinger March 27, 2014 - 5:58pm Addthis News Media Contact 202-586-4940 "The passing of Dr. James R. Schlesinger is a great loss for the academic, scientific and intelligence communities. It is a loss for the Department of

  3. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  4. First results of electron temperature measurements by the use of multi-pass Thomson scattering system in GAMMA 10

    SciTech Connect (OSTI)

    Yoshikawa, M., E-mail: yosikawa@prc.tsukuba.ac.jp; Nagasu, K.; Shimamura, Y.; Shima, Y.; Kohagura, J.; Sakamoto, M.; Nakashima, Y.; Imai, T.; Ichimura, M. [Plasma Research Center, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan); Yasuhara, R.; Yamada, I.; Funaba, H.; Kawahata, K. [National Institute for Fusion Science, 322-6 Oroshi-cho, Toki, Gifu 509-5292 (Japan); Minami, T. [Institute of Advanced Energy, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan)

    2014-11-15

    A multi-pass Thomson scattering (TS) has the advantage of enhancing scattered signals. We constructed a multi-pass TS system for a polarisation-based system and an image relaying system modelled on the GAMMA 10 TS system. We undertook Raman scattering experiments both for the multi-pass setting and for checking the optical components. Moreover, we applied the system to the electron temperature measurements in the GAMMA 10 plasma for the first time. The integrated scattering signal was magnified by approximately three times by using the multi-pass TS system with four passes. The electron temperature measurement accuracy is improved by using this multi-pass system.

  5. Venture Global Calcasieu Pass, LLC- FE Dkt. No.- 15-25-LNG

    Broader source: Energy.gov [DOE]

    The Office of Fossil Energy gives notice of receipt of an Application filed February 9, 2015, by Venture Global Calcasieu Pass, LLC (Venture Global), seeking a long-term multi-contract...

  6. High peak-power kilohertz laser system employing single-stage multi-pass amplification

    DOE Patents [OSTI]

    Shan, Bing; Wang, Chun; Chang, Zenghu

    2006-05-23

    The present invention describes a technique for achieving high peak power output in a laser employing single-stage, multi-pass amplification. High gain is achieved by employing a very small "seed" beam diameter in gain medium, and maintaining the small beam diameter for multiple high-gain pre-amplification passes through a pumped gain medium, then leading the beam out of the amplifier cavity, changing the beam diameter and sending it back to the amplifier cavity for additional, high-power amplification passes through the gain medium. In these power amplification passes, the beam diameter in gain medium is increased and carefully matched to the pump laser's beam diameter for high efficiency extraction of energy from the pumped gain medium. A method of "grooming" the beam by means of a far-field spatial filter in the process of changing the beam size within the single-stage amplifier is also described.

  7. Regional Comparisons, Spatial Aggregation, and Asymmetry of Price Pass-Through

    Reports and Publications (EIA)

    2005-01-01

    Spot to retail price pass-through behavior of the U.S. gasoline market was investigated at the national and regional levels, using weekly wholesale and retail motor gasoline prices from January 2000 to the present.

  8. Sabine Pass Liquefaction, LLC – FE Dkt. No. 14-92-LNG

    Broader source: Energy.gov [DOE]

    The Office of Fossil Energy gives notice of receipt of an Application filed on July 11, 2014, by Sabine Pass Liquefaction, LLC (SPL), seeking long-term multi-contract authorization to export...

  9. Passing particle toroidal precession induced by electric field in a tokamak

    SciTech Connect (OSTI)

    Andreev, V. V.; Ilgisonis, V. I.; Sorokina, E. A.; NRC “Kurchatov Institute”, Kurchatov Sq. 1, Moscow 123182

    2013-12-15

    Characteristics of a rotation of passing particles in a tokamak with radial electric field are calculated. The expression for time-averaged toroidal velocity of the passing particle induced by the electric field is derived. The electric-field-induced additive to the toroidal velocity of the passing particle appears to be much smaller than the velocity of the electric drift calculated for the poloidal magnetic field typical for the trapped particle. This quantity can even have the different sign depending on the azimuthal position of the particle starting point. The unified approach for the calculation of the bounce period and of the time-averaged toroidal velocity of both trapped and passing particles in the whole volume of plasma column is presented. The results are obtained analytically and are confirmed by 3D numerical calculations of the trajectories of charged particles.

  10. Application for presidential permit OE Docket No. PP-371 Northern Pass Transmission LLC: Addendum to Application

    Broader source: Energy.gov [DOE]

    On October 14, 2010, Northern Pass Transmission, LLC submitted an application for a Presidential Permit to construct a 1,200 MW high voltage direct current ("HVDC") transmission line (the ...

  11. Sabine Pass, LA Liquefied Natural Gas Exports to Barbados (Million Cubic

    U.S. Energy Information Administration (EIA) Indexed Site

    Feet) Sabine Pass, LA Liquefied Natural Gas Exports to Barbados (Million Cubic Feet) Sabine Pass, LA Liquefied Natural Gas Exports to Barbados (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2016 2 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 04/29/2016 Next Release Date: 05/31/2016 Referring Pages: U.S.

  12. Application for Presidential Permit OE Docket No. PP-371 Northern Pass:

    Energy Savers [EERE]

    Comments from Conservation Law Foundation, Appalachian Mountain Club, and Society for the Protection of New Hampshire Forests | Department of Energy Conservation Law Foundation, Appalachian Mountain Club, and Society for the Protection of New Hampshire Forests Application for Presidential Permit OE Docket No. PP-371 Northern Pass: Comments from Conservation Law Foundation, Appalachian Mountain Club, and Society for the Protection of New Hampshire Forests Application from Northern Pass to

  13. Application for Presidential permit OE Docket No. PP-371 Northern Pass

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Transmission: Comments and Requests for Intervention Received on the Amended Application | Department of Energy permit OE Docket No. PP-371 Northern Pass Transmission: Comments and Requests for Intervention Received on the Amended Application Application for Presidential permit OE Docket No. PP-371 Northern Pass Transmission: Comments and Requests for Intervention Received on the Amended Application PP-371 Comments from Lee Ann Moulder 08/25/13 Comments from Pamela Martin 08/25/13 Comments

  14. FINDING OF NO SIGNIFICANT IMPACT FOR SABINE PASS LIQUEFACTION EXPANSION PROJECT REGARDING

    Energy Savers [EERE]

    EXPANSION PROJECT REGARDING SABINE PASS LIQUEFACTION, LLC, APPLICATIONS SEEKING DEPARTMENT OF ENERGY AUTHORIZATION TO EXPORT LIQUEFIED NATURAL GAS FROM SABINE PASS LNG TERMINAL TO NON-FREE TRADE AGREEMENT NATIONS AGENCY: U.S. Department of Energy, Office of Fossil Energy ACTION: Finding of No Significant Impact SUMMARY: Pursuant to section 1501.6 of the regulations of the Council on Environmental Quality (CEQ), 40 CFR 1501.6, the U.S. Department of Energy (DOE) participated as a cooperating

  15. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  16. JEMMRLA - Electron Model of a Muon RLA with Multi-pass Arcs

    SciTech Connect (OSTI)

    Bogacz, Slawomir Alex; Krafft, Geoffrey A.; Morozov, Vasiliy S.; Roblin, Yves R.

    2013-06-01

    We propose a demonstration experiment for a new concept of a 'dogbone' RLA with multi-pass return arcs -- JEMMRLA (Jlab Electron Model of Muon RLA). Such an RLA with linear-field multi-pass arcs was introduced for rapid acceleration of muons for the next generation of Muon Facilities. It allows for efficient use of expensive RF while the multi-pass arc design based on linear combined-function magnets exhibits a number of advantages over separate-arc or pulsed-arc designs. Here we describe a test of this concept by scaling a GeV scale muon design for electrons. Scaling muon momenta by the muon-to-electron mass ratio leads to a scheme, in which a 4.5 MeV electron beam is injected in the middle of a 3 MeV/pass linac with two double-pass return arcs and is accelerated to 18 MeV in 4.5 passes. All spatial dimensions including the orbit distortion are scaled by a factor of 7.5, which arises from scaling the 200 MHz muon RF to a readily available 1.5 GHz. The hardware requirements are not very demanding making it straightforward to implement. Such an RLA may have applications going beyond muon acceleration: in medical isotope production, radiation cancer therapy and homeland security.

  17. Linear Fixed-Field Multi-Pass Arcs for Recirculating Linear Accelerators

    SciTech Connect (OSTI)

    V.S. Morozov, S.A. Bogacz, Y.R. Roblin, K.B. Beard

    2012-06-01

    Recirculating Linear Accelerators (RLA's) provide a compact and efficient way of accelerating particle beams to medium and high energies by reusing the same linac for multiple passes. In the conventional scheme, after each pass, the different energy beams coming out of the linac are separated and directed into appropriate arcs for recirculation, with each pass requiring a separate fixed-energy arc. In this paper we present a concept of an RLA return arc based on linear combined-function magnets, in which two and potentially more consecutive passes with very different energies are transported through the same string of magnets. By adjusting the dipole and quadrupole components of the constituting linear combined-function magnets, the arc is designed to be achromatic and to have zero initial and final reference orbit offsets for all transported beam energies. We demonstrate the concept by developing a design for a droplet-shaped return arc for a dog-bone RLA capable of transporting two beam passes with momenta different by a factor of two. We present the results of tracking simulations of the two passes and lay out the path to end-to-end design and simulation of a complete dog-bone RLA.

  18. A hole modulator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2015-02-09

    The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ?332?meV to ?294?meV at 80?A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

  19. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A.; Fujioka, H.

    2014-05-05

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  20. Application for Presidential Permit OE Docket No: PP-371 Northern Pass Transmission: Comments from William and Michelle Shoemaker

    Broader source: Energy.gov [DOE]

    Application from Northern Pass Transmission to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border.

  1. Application for Presidential Permit OE Docket No. PP-371 Northern Pass Transmission: Comments from Paula VandeWerken

    Broader source: Energy.gov [DOE]

    Application from Northern Pass Transmission to construct, operate and maintain electric transmission facilities at the U.S. - Canada Border.

  2. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA February 8, 2012 EIS-0476: Final Environmental Impact ...

  3. Hybrid: Passing

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Since the battery helps power the vehicle, it is larger and holds much more energy than batteries used to start conventional vehicles. Main stage: See through car with battery, ...

  4. Oxidation of ultrathin GaSe

    SciTech Connect (OSTI)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  5. Oxidation of ultrathin GaSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  6. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J. Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y.

    2014-09-08

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  7. Electron Model Of A Dogbone RLA With Multi-Pass Arcs

    SciTech Connect (OSTI)

    Beard, Kevin B.; Roblin, Yves R.; Morozov, Vasiliy; Bogacz, Slawomir Alex; Krafft, Geoffrey A.

    2012-09-01

    The design of a dogbone Recirculated Linear Accelerator, RLA, with linear-field multi-pass arcs was earlier developed [1] for accelerating muons in a Neutrino Factory and a Muon Collider. It allows for efficient use of expensive RF while the multi-pass arc design based on linear combined-function magnets exhibits a number of advantages over separate-arc or pulsed-arc designs. Such an RLA may have applications going beyond muon acceleration. This paper describes a possible straightforward test of this concept by scaling a GeV scale muon design for electrons. Scaling muon momenta by the muon-to-electron mass ratio leads to a scheme, in which a 4.5 MeV electron beam is injected at the middle of a 3 MeV/pass linac with two double-pass return arcs and is accelerated to 18 MeV in 4.5 passes. All spatial dimensions including the orbit distortion are scaled by a factor of 7.5, which arises from scaling the 200 MHz muon RF to the frequency readily available at CEBAF: 1.5 GHz. The footprint of a complete RLA fits in an area of 25 by 7 m. The scheme utilizes only fixed magnetic fields including injection and extraction. The hardware requirements are not very demanding, making it straightforward to implement

  8. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  9. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  10. EA-2036: Sabine Pass Liquefaction Project (design optimization); Cameron Parish, Louisiana

    Broader source: Energy.gov [DOE]

    In January 2014, the Federal Energy Regulatory Commission (FERC) issued an EA to analyze the potential environmental impacts associated with an application to amend FERC’s April 2012 authorization of the Sabine Pass Liquefaction Project in order to optimize its design and operation. In April 2015, Sabine Pass Liquefaction, LLC, and Sabine Pass LNG, L.P., applied to DOE’s Office of Fossil Energy (FE) seeking authorization to increase the amount of liquefied natural gas (LNG) to be exported from the facility above the level that FE authorized in August 2012. DOE adopted FERC’s EA for the optimization and issued a finding of no significant impact on March 11, 2016.

  11. A proposal for a user-level, message passing interface in a distributed memory environment

    SciTech Connect (OSTI)

    Dongarra, J.J. |; Hempel, R.; Hey, A.J.G.; Walker, D.W.

    1993-02-01

    This paper describes Message Passing Interface 1 (MPI1), a proposed library interface standard for supporting point-to-point message passing. The intended standard will be provided with Fortran 77 and C interfaces, and will form the basis of a standard high level communication environment featuring collective communication and data distribution transformations. The standard proposed here provides blocking, nonblocking, and synchronized message passing between pairs of processes, with message selectivity by source process and message type. Provision is made for noncontiguous messages. Context control provides a convenient means of avoiding message selectivity conflicts between different phases of an application. The ability to form and manipulate process groups permits task parallelism to be exploited, and is a useful abstraction in controlling certain types of collective communication.

  12. Princeton Plasma Physics Lab - General Atomics (GA)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http:www.pppl.govnode1132

  13. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash Biswas, Dhrubes

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  14. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  15. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PDF icon 2015 BTO Peer Review Presentation - Development and Industrialization of InGaNGaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture More Documents & ...

  16. Sabine Pass, LA Exports to Brazil Liquefied Natural Gas (Million Cubic

    U.S. Energy Information Administration (EIA) Indexed Site

    Feet) Brazil Liquefied Natural Gas (Million Cubic Feet) Sabine Pass, LA Exports to Brazil Liquefied Natural Gas (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 1,680 4,681 2,108 2016 3,284 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 04/29/2016 Next Release Date: 05/31/2016 Referring Pages: U.S. Liquefied Natural Gas Exports by Point of Exit Sabine Pass, LA Liquefied

  17. Sabine Pass, LA Exports to Japan Liquefied Natural Gas (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Japan Liquefied Natural Gas (Million Cubic Feet) Sabine Pass, LA Exports to Japan Liquefied Natural Gas (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2012 3,174 1,863 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 04/29/2016 Next Release Date: 05/31/2016 Referring Pages: U.S. Liquefied Natural Gas Exports by Point of Exit Sabine Pass, LA Liquefied Natural Gas Exports to Japan

  18. Sabine Pass, LA Exports to Korea Liquefied Natural Gas (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Korea Liquefied Natural Gas (Million Cubic Feet) Sabine Pass, LA Exports to Korea Liquefied Natural Gas (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 2,901 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 04/29/2016 Next Release Date: 05/31/2016 Referring Pages: U.S. Liquefied Natural Gas Exports by Point of Exit Sabine Pass, LA Liquefied Natural Gas Exports to South Korea

  19. Sabine Pass, LA Exports to Portugal Liquefied Natural Gas (Million Cubic

    U.S. Energy Information Administration (EIA) Indexed Site

    Feet) Portugal Liquefied Natural Gas (Million Cubic Feet) Sabine Pass, LA Exports to Portugal Liquefied Natural Gas (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2012 2,618 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 04/29/2016 Next Release Date: 05/31/2016 Referring Pages: U.S. Liquefied Natural Gas Exports by Point of Exit Sabine Pass, LA Liquefied Natural Gas Exports

  20. Sabine Pass, LA Exports to Spain Liquefied Natural Gas (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Spain Liquefied Natural Gas (Million Cubic Feet) Sabine Pass, LA Exports to Spain Liquefied Natural Gas (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 3,007 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 04/29/2016 Next Release Date: 05/31/2016 Referring Pages: U.S. Liquefied Natural Gas Exports by Point of Exit Sabine Pass, LA Liquefied Natural Gas Exports to Spain

  1. Sabine Pass, LA Exports to United kingdom Liquefied Natural Gas (Million

    U.S. Energy Information Administration (EIA) Indexed Site

    Cubic Feet) United kingdom Liquefied Natural Gas (Million Cubic Feet) Sabine Pass, LA Exports to United kingdom Liquefied Natural Gas (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 2,862 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 04/29/2016 Next Release Date: 05/31/2016 Referring Pages: U.S. Liquefied Natural Gas Exports by Point of Exit Sabine Pass, LA Liquefied

  2. Sabine Pass, LA Liquefied Natural Gas Exports to Chile (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Chile (Million Cubic Feet) Sabine Pass, LA Liquefied Natural Gas Exports to Chile (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 2,910 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 04/29/2016 Next Release Date: 05/31/2016 Referring Pages: U.S. Liquefied Natural Gas Exports by Point of Exit Sabine Pass, LA Liquefied Natural Gas Exports to Chile

  3. Sabine Pass, LA Liquefied Natural Gas Exports to China (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    China (Million Cubic Feet) Sabine Pass, LA Liquefied Natural Gas Exports to China (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 3,354 2,848 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 04/29/2016 Next Release Date: 05/31/2016 Referring Pages: U.S. Liquefied Natural Gas Exports by Point of Exit Sabine Pass, LA Liquefied Natural Gas Exports to China

  4. Sabine Pass, LA Liquefied Natural Gas Exports to India (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    India (Million Cubic Feet) Sabine Pass, LA Liquefied Natural Gas Exports to India (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 3,477 3,072 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 04/29/2016 Next Release Date: 05/31/2016 Referring Pages: U.S. Liquefied Natural Gas Exports by Point of Exit Sabine Pass, LA Liquefied Natural Gas Exports to India

  5. Sabine Pass, LA Liquefied Natural Gas Imports From Norway (Million Cubic

    U.S. Energy Information Administration (EIA) Indexed Site

    Feet) Norway (Million Cubic Feet) Sabine Pass, LA Liquefied Natural Gas Imports From Norway (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 3,556 2012 3,286 2,927 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 4/29/2016 Next Release Date: 5/31/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Sabine Pass, LA LNG Imports from Norway

  6. Sabine Pass, LA Liquefied Natural Gas Imports From Yemen (Million Cubic

    U.S. Energy Information Administration (EIA) Indexed Site

    Feet) Yemen (Million Cubic Feet) Sabine Pass, LA Liquefied Natural Gas Imports From Yemen (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 3,115 3,122 3,106 3,109 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 4/29/2016 Next Release Date: 5/31/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Sabine Pass, LA LNG Imports from Yemen

  7. Sabine Pass, LA Natural Gas LNG Imports (Price) From Peru (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    Thousand Cubic Feet) Sabine Pass, LA Natural Gas LNG Imports (Price) From Peru (Dollars per Thousand Cubic Feet) Sabine Pass, LA Natural Gas LNG Imports (Price) From Peru (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- -- 2010's 6.68 -- -- -- -- - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 4/29/2016 Next Release Date:

  8. Sabine Pass, LA Natural Gas Liquefied Natural Gas Imports (Million Cubic

    U.S. Energy Information Administration (EIA) Indexed Site

    Feet) (Million Cubic Feet) Sabine Pass, LA Natural Gas Liquefied Natural Gas Imports (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2014 3,006 2,874 2015 6,079 2,832 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 4/29/2016 Next Release Date: 5/31/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Sabine Pass, LA, CA LNG Exports to All Countries

  9. Sabine Pass, LA Natural Gas Liquefied Natural Gas Imports from Qatar

    U.S. Energy Information Administration (EIA) Indexed Site

    (Million Cubic Feet) from Qatar (Million Cubic Feet) Sabine Pass, LA Natural Gas Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 8,918 9,000 4,541 4,576 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 4/29/2016 Next Release Date: 5/31/2016 Referring Pages: U.S. Liquefied Natural Gas Imports by Point of Entry Sabine Pass, LA LNG

  10. Savine Pass, LA Natural Gas Liquefied Natural Gas Imports from Trinidad and

    U.S. Energy Information Administration (EIA) Indexed Site

    Tobago (Million Cubic Feet) Savine Pass, LA Natural Gas Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Savine Pass, LA Natural Gas Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2011 2,568 2012 2,837 2,852 2013 2,874 2,876 2014 3,006 2,874 2015 6,079 2,832 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data.

  11. Survival of Juvenile Chinook Salmon Passing the Bonneville Dam Spillway in 2007

    SciTech Connect (OSTI)

    Ploskey, Gene R.; Weiland, Mark A.; Hughes, James S.; Zimmerman, Shon A.; Durham, Robin E.; Fischer, Eric S.; Kim, Jina; Townsend, R. L.; Skalski, J. R.; Buchanan, Rebecca A.; McComas, Roy L.

    2008-12-01

    The U.S. Army Corps of Engineers Portland District (CENWP) funds numerous evaluations of fish passage and survival on the Columbia River. In 2007, the CENWP asked Pacific Northwest National Laboratory to conduct an acoustic telemetry study to estimate the survival of juvenile Chinook salmon passing the spillway at Bonneville Dam. This report documents the study results which are intended to be used to improve the conditions juvenile anadromous fish experience when passing through the dams that the Corps operates on the river.

  12. Price of Sabine Pass, LA Liquefied Natural Gas Exports to Barbados (Dollars

    U.S. Energy Information Administration (EIA) Indexed Site

    per Thousand Cubic Feet) Price of Sabine Pass, LA Liquefied Natural Gas Exports to Barbados (Dollars per Thousand Cubic Feet) Price of Sabine Pass, LA Liquefied Natural Gas Exports to Barbados (Dollars per Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2016 10.00 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 04/29/2016 Next Release Date: 05/31/2016 Referring Pages: U.S.

  13. Price of Sabine Pass, LA Natural Gas LNG Imports from Nigeria (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    Thousand Cubic Feet) Sabine Pass, LA Natural Gas LNG Imports from Nigeria (Dollars per Thousand Cubic Feet) Price of Sabine Pass, LA Natural Gas LNG Imports from Nigeria (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- 9.77 3.54 2010's -- -- -- - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 4/29/2016 Next Release Date: 5/31/2016

  14. Price of Savine Pass, LA Natural Gas LNG Imports from Egypt (Nominal

    U.S. Energy Information Administration (EIA) Indexed Site

    Dollars per Thousand Cubic Feet) Savine Pass, LA Natural Gas LNG Imports from Egypt (Nominal Dollars per Thousand Cubic Feet) Price of Savine Pass, LA Natural Gas LNG Imports from Egypt (Nominal Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 2000's -- -- 4.10 2010's -- -- -- - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 4/29/2016 Next

  15. Accelerated aging of GaAs concentrator solar cells

    SciTech Connect (OSTI)

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  16. Memorandum of Understanding (MOU) between DOE, Northern Pass and SE Group- August 12, 2011

    Broader source: Energy.gov [DOE]

    The Department of Energy (DOE) has selected an integrated team of professionals from three environmental consulting firms to prepare the DOE Environmental Impact Statement (EIS) addressing the Northern Pass Presidential Permit application and signed a Memorandum of Understanding with the group.

  17. Amended Notice of Intent for the Northern Pass Transmission Line Project Published in the Federal Register

    Broader source: Energy.gov [DOE]

    The Department of Energy announces its intent to modify the scope of the Northern Pass Transmission Line Project Environmental Impact Statement and to conduct additional public scoping meetings. The Federal Register Notice, which is now available for downloading, includes information on how to submit comments and participate in the additional public scoping meetings.

  18. Multiple pass and multiple layer friction stir welding and material enhancement processes

    DOE Patents [OSTI]

    Feng, Zhili [Knoxville, TN; David, Stan A. [Knoxville, TN; Frederick, David Alan [Harriman, TN

    2010-07-27

    Processes for friction stir welding, typically for comparatively thick plate materials using multiple passes and multiple layers of a friction stir welding tool. In some embodiments a first portion of a fabrication preform and a second portion of the fabrication preform are placed adjacent to each other to form a joint, and there may be a groove adjacent the joint. The joint is welded and then, where a groove exists, a filler may be disposed in the groove, and the seams between the filler and the first and second portions of the fabrication preform may be friction stir welded. In some embodiments two portions of a fabrication preform are abutted to form a joint, where the joint may, for example, be a lap joint, a bevel joint or a butt joint. In some embodiments a plurality of passes of a friction stir welding tool may be used, with some passes welding from one side of a fabrication preform and other passes welding from the other side of the fabrication preform.

  19. Transition radiation generated by a particle passing through the apex of a conducting cone

    SciTech Connect (OSTI)

    Kol'tsov, A. V. Serov, A. V.

    2009-12-15

    The spatial field distribution is determined for the transition radiation generated by a particle passing through the apex of a cone along its axis. Expressions for the angular distribution of the radiation intensity are obtained for apex angles between 0 and {pi}. Characteristics of transition radiation emitted into a 'funnel' and a dihedral angle are compared.

  20. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5??10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  1. SCALED ELECTRON MODEL OF A DOGBONE MUON RLA WITH MULTI-PASS ARCS

    SciTech Connect (OSTI)

    Kevin Beard, Rolland Johnson, Vasiliy Morozov, Yves Roblin, Andrew Hutton, Geoffrey Krafft, Slawomir Bogacz

    2012-07-01

    The design of a dogbone RLA with linear-field multi-pass arcs was earlier developed for accelerating muons in a Neutrino Factory and a Muon Collider. It allows for efficient use of expensive RF while the multi-pass arc design based on linear combined-function magnets exhibits a number of advantages over separate-arc or pulsed-arc designs. Such an RLA may have applications going beyond muon acceleration. This paper describes a possible straightforward test of this concept by scaling a GeV scale muon design for electrons. Scaling muon momenta by the muon-to-electron mass ratio leads to a scheme, in which a 4.5 MeV electron beam is injected at the middle of a 3 MeV/pass linac with two double-pass return arcs and is accelerated to 18 MeV in 4.5 passes. All spatial dimensions including the orbit distortion are scaled by a factor of 7.5, which arises from scaling the 200 MHz muon RF to a readily available at CEBAF 1.5 GHz. The footprint of a complete RLA fits in an area of 25 by 7 m. The scheme utilizes only fixed magnetic fields including injection and extraction. The hardware requirements are not very demanding, making it straightforward to implement. In this report, we have shown first of all that measuring the energy spectrum of the fast neutrons in the liquid scintillators allows one to distinguish the two chemical forms of plutonium. In addition, combining this information with the Feynman 2-neutron and 3-neutron correlations allows one to extract the {alpha}-ratio without explicitly knowing the multiplication. Given the {alpha}-ratio one can then extract the multiplication as well as the {sup 239}Pu and {sup 240}Pu masses directly from the moment equations.

  2. GaP ring-like nanostructures on GaAs (100) with In{sub 0.15}Ga{sub 0.85}As compensation layers

    SciTech Connect (OSTI)

    Prongjit, Patchareewan Pankaow, Naraporn Boonpeng, Poonyasiri Thainoi, Supachok Panyakeow, Somsak Ratanathammaphan, Somchai

    2013-12-04

    We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In{sub 0.15}Ga{sub 0.85}As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In{sub 0.15}Ga{sub 0.85}As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In{sub 0.15}Ga{sub 0.85}As layer thickness.

  3. Case History of a Clean Water Act Compliance Agreement at the Rocky Flats Environmental Technology Site near Golden, Colorado

    SciTech Connect (OSTI)

    Thompson, J.S.

    1995-08-01

    A major Clean Water Act (CWA) Federal Facilities Compliance Agreement was signed on March 25, 1991 by the US Department of Energy, Rocky Flats Field Office (DOE, RFFO) and the Water Enforcement Division of the Environmental Protection Agency (EPA), Region VIII. The agreement revised the Rocky Flats Plant`s National Pollutant Discharge Elimination System (NPDES) permit and arose from pemittee-requested changes in effluent monitoring points and permit violations, most notably the February 22, 1989 Chromic Acid Incident. The Rocky Flats Plant, now called the Rocky Flats Environmental Technology Site (Site) near Golden Colorado was operated at that time by Rockwell International Corporation, who later plead guilty to six misdemeanor and felony counts of the CWA (the aforementioned NPDES permit violations) and paid a $4 million fine on March 26, 1992. The Compliance Agreement, hereafter referred to as the NPDES FFCA, called for three separate remedial action plans and contained a schedule for their submittal to the EPA. The compliance plans focussed on: (1) Waste Water Treatment Plant (WWTP) performance upgrades, (2) source control and surface water protection, and (3) characterization of the impacts from past sludge disposal practices. Projects that implemented the compliance plans were initiated soon after submittal to the EPA and are forecast to complete in 1997 at a total cost of over $35 million. This paper presents a case history of NPDES FFCA compliance projects and highlights the successes, failures, and lessons learned.

  4. Simultaneous cloning and expression of two cellulase genes from Bacillus subtilis newly isolated from Golden Takin (Budorcas taxicolor Bedfordi)

    SciTech Connect (OSTI)

    Li, Wang; College of Animal Science, Henan Science and Technology University, Luoyang 471003 ; Huan, Xiajuan; Zhou, Ying; Ma, Qingyi; Chen, Yulin

    2009-06-12

    A bacterial strain with high cellulase activity was isolated of feces sample of Golden Takin (Budorcas taxicolor Bedfordi). The bacterium was classified and designated Bacillus subtilis LN by morphological and 16SrDNA gene sequence analysis. Two putative cellulase genes, CelL15 and CelL73, were simultaneously cloned from the isolated strain by PCR. The putative gene CelL15 consisted of an open reading frame (ORF) of 1470 nucleotides and encoded a protein of 490 amino acids with a molecular weight of 54 kDa. The CelL73 gene consisted of an open reading frame (ORF) of 741 nucleotides and encoded a protein of 247 amino acids with a molecular weight of 27 kDa. Both genes were purified and cloned into pET-28a for expression in Escherichia coli BL21 (DE3). The ability of E. coli to degrade cellulose was enhanced when the two recombinants were cultured together.

  5. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  6. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  7. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  8. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  9. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M. (Sandia Park, NM); Baca, Albert G. (Albuquerque, NM); Zutavern, Fred J. (Albuquerque, NM)

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  10. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect (OSTI)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  11. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  12. Survival and Passage of Juvenile Chinook Salmon and Steelhead Passing through Bonneville Dam, 2011

    SciTech Connect (OSTI)

    Ploskey, Gene R.; Batten, G.; Cushing, Aaron W.; Kim, Jin A.; Johnson, Gary E.; Skalski, J. R.; Townsend, Richard L.; Seaburg, Adam; Weiland, Mark A.; Woodley, Christa M.; Hughes, James S.; Carlson, Thomas J.; Carpenter, Scott M.; Deng, Zhiqun; Etherington, D. J.; Fischer, Eric S.; Fu, Tao; Greiner, Michael J.; Hennen, Matthew J.; Martinez, Jayson J.; Mitchell, T. D.; Rayamajhi, Bishes; Zimmerman, Shon A.

    2013-02-15

    Pacific Northwest National Laboratory (PNNL) and subcontractors conducted an acoustic-telemetry study of juvenile salmonid fish passage and survival at Bonneville Dam in 2011. The study was conducted to assess the readiness of the monitoring system for official compliance studies under the 2008 Biological Opinion and Fish Accords and to assess performance measures including route-specific fish passage proportions, travel times, and survival based upon a virtual/paired-release model. The study relied on releases of live Juvenile Salmon Acoustic Telemetry System tagged smolts in the Columbia River and used acoustic telemetry to evaluate the approach, passage, and survival of passing juvenile salmon using a virtual release, paired reference release survival model. This study supports the U.S. Army Corps of Engineers’ continual effort to improve conditions for juvenile anadromous fish passing through Columbia River dams.

  13. Feasibility of Tidal and Ocean Current Energy in False Pass, Aleutian Islands, Alaska FINAL REPORT

    SciTech Connect (OSTI)

    Wright, Bruce Albert

    2014-05-07

    The Aleutian Pribilof Islands Association was awarded a U.S. Department of Energy Tribal Energy Program grant (DE-EE0005624) for the Feasibility of Tidal and Ocean Current Energy in False Pass, Aleutian Islands, Alaska (Project). The goal of the Project was to perform a feasibility study to determine if a tidal energy project would be a viable means to generate electricity and heat to meet long-term fossil fuel use reduction goals, specifically to produce at least 30% of the electrical and heating needs of the tribally-owned buildings in False Pass. The Project Team included the Aleut Region organizations comprised of the Aleutian Pribilof Island Association (APIA), and Aleutian Pribilof Island Community Development Association (APICDA); the University of Alaska Anchorage, ORPC Alaska a wholly-owned subsidiary of Ocean Renewable Power Company (ORPC), City of False Pass, Benthic GeoScience, and the National Renewable Energy Laboratory (NREL). The following Project objectives were completed: collected existing bathymetric, tidal, and ocean current data to develop a basic model of current circulation at False Pass, measured current velocities at two sites for a full lunar cycle to establish the viability of the current resource, collected data on transmission infrastructure, electrical loads, and electrical generation at False Pass, performed economic analysis based on current costs of energy and amount of energy anticipated from and costs associated with the tidal energy project conceptual design and scoped environmental issues. Utilizing circulation modeling, the Project Team identified two target sites with strong potential for robust tidal energy resources in Isanotski Strait and another nearer the City of False Pass. In addition, the Project Team completed a survey of the electrical infrastructure, which identified likely sites of interconnection and clarified required transmission distances from the tidal energy resources. Based on resource and electrical data, the Project Team developed a conceptual tidal energy project design utilizing ORPC’s TidGen® Power System. While the Project Team has not committed to ORPC technology for future development of a False Pass project, this conceptual design was critical to informing the Project’s economic analysis. The results showed that power from a tidal energy project could be provided to the City of False at a rate at or below the cost of diesel generated electricity and sold to commercial customers at rates competitive with current market rates, providing a stable, flat priced, environmentally sound alternative to the diesel generation currently utilized for energy in the community. The Project Team concluded that with additional grants and private investment a tidal energy project at False Pass is well-positioned to be the first tidal energy project to be developed in Alaska, and the first tidal energy project to be interconnected to an isolated micro grid in the world. A viable project will be a model for similar projects in coastal Alaska.

  14. SEMI-ANNUAL REPORTS FOR SABINE PASS LIQUEFACTION, LLC - FE DKT. NO.

    Energy Savers [EERE]

    10-85-LNG; 10-111-LNG; 13-121-LNG; 14-31-LNG; 13-30-LNG; 13-42-LNG; 14-92-LNG; 15-171-LNG | Department of Energy SABINE PASS LIQUEFACTION, LLC - FE DKT. NO. 10-85-LNG; 10-111-LNG; 13-121-LNG; 14-31-LNG; 13-30-LNG; 13-42-LNG; 14-92-LNG; 15-171-LNG SEMI-ANNUAL REPORTS FOR SABINE PASS LIQUEFACTION, LLC - FE DKT. NO. 10-85-LNG; 10-111-LNG; 13-121-LNG; 14-31-LNG; 13-30-LNG; 13-42-LNG; 14-92-LNG; 15-171-LNG PDF icon April 2011 PDF icon October 2011 PDF icon April 2012 PDF icon October 2012 PDF

  15. Survival and Passage of Juvenile Chinook Salmon and Steelhead Passing through Bonneville Dam, 2010

    SciTech Connect (OSTI)

    Ploskey, Gene R.; Weiland, Mark A.; Hughes, James S.; Woodley, Christa M.; Deng, Zhiqun; Carlson, Thomas J.; Kim, Jin A.; Royer, Ida M.; Batten, George W.; Cushing, Aaron W.; Carpenter, Scott M.; Etherington, D. J.; Faber, Derrek M.; Fischer, Eric S.; Fu, Tao; Hennen, Matthew J.; Mitchell, Tyler; Monter, Tyrell J.; Skalski, John R.; Townsend, Richard L.; Zimmerman, Shon A.

    2011-12-01

    Pacific Northwest National Laboratory (PNNL) and subcontractors conducted an acoustic-telemetry study of juvenile salmonid fish passage and survival at Bonneville Dam in 2010. The study was conducted to assess the readiness of the monitoring system for official compliance studies under the 2008 Biological Opinion and Fish Accords and to assess performance measures including route-specific fish passage proportions, travel times, and survival based upon a single-release model. This also was the last year of evaluation of effects of a behavioral guidance device installed in the Powerhouse 2 forebay. The study relied on releases of live Juvenile Salmon Acoustic Telemetry System tagged smolts in the Columbia River and used acoustic telemetry to evaluate the approach, passage, and survival of passing juvenile salmon. This study supports the U.S. Army Corps of Engineers continual effort to improve conditions for juvenile anadromous fish passing through Columbia River dams.

  16. Survival and Passage of Juvenile Chinook Salmon and Steelhead Passing Through Bonneville Dam, 2010

    SciTech Connect (OSTI)

    Ploskey, Gene R.; Weiland, Mark A.; Hughes, James S.; Woodley, Christa M.; Deng, Zhiqun; Carlson, Thomas J.; Kim, Jin A.; Royer, Ida M.; Batten, George W.; Cushing, Aaron W.; Carpenter, Scott M.; Etherington, D. J.; Faber, Derrek M.; Fischer, Eric S.; Fu, Tao; Hennen, Matthew J.; Mitchell, T. D.; Monter, Tyrell J.; Skalski, J. R.; Townsend, Richard L.; Zimmerman, Shon A.

    2012-09-01

    Pacific Northwest National Laboratory (PNNL) and subcontractors conducted an acoustic-telemetry study of juvenile salmonid fish passage and survival at Bonneville Dam in 2010. The study was conducted to assess the readiness of the monitoring system for official compliance studies under the 2008 Biological Opinion and Fish Accords and to assess performance measures including route-specific fish passage proportions, travel times, and survival based upon a single-release model. This also was the last year of evaluation of effects of a behavioral guidance device installed in the Powerhouse 2 forebay. The study relied on releases of live Juvenile Salmon Acoustic Telemetry System tagged smolts in the Columbia River and used acoustic telemetry to evaluate the approach, passage, and survival of passing juvenile salmon. This study supports the U.S. Army Corps of Engineers continual effort to improve conditions for juvenile anadromous fish passing through Columbia River dams.

  17. FINDING OF NO SIGNIFICANT IMPACT FOR SABINE PASS LIQUEFACTION PROJECT REGARDING

    Energy Savers [EERE]

    PROJECT REGARDING APPLICATION TO DEPARTMENT OF ENERGY TO INCREASE AUTHORIZED VOLUMES OF LIQUEFIED NATURAL GAS FOR EXPORT FROM SABINE PASS LNG TERMINAL TO NON-FREE TRADE AGREEMENT NATIONS AGENCY: U.S. Department of Energy, Office of Fossil Energy ACTION: Finding of No Significant Impact SUMMARY: Pursuant to section 1508.9 of the regulations of the Council on Environmental Quality (CEQ), 40 CFR 1508.9, the Federal Energy Regulatory Commission (FERC) prepared an environmental assessment (EA) that

  18. Draft Northern Pass Transmission Line Project Environmental Impact Statement_Summary

    Energy Savers [EERE]

    SUMMARY JULY 2015 DOE/EIS-0463 U.S. DEPARTMENT OF ENERGY OFFICE OF ELECTRICITY DELIVERY AND ENERGY RELIABILITY WASHINGTON, DC Department of Energy Washington, DC 20585 July 2015 Dear Sir/Madam: Enclosed for your review and comment is the Draft Northern Pass Transmission Line Project Environmental Impact Statement (DOE/EIS-0463) prepared by the Department of Energy (DOE) pursuant to the National Environmental Policy Act of 1969 (NEPA) and its implementing regulations. The U.S. Forest Service -

  19. QMP-MVIA: a message passing system for Linux clusters with gigabit Ethernet mesh connections

    SciTech Connect (OSTI)

    Jie Chen; W. Watson III; Robert Edwards; Weizhen Mao

    2004-09-01

    Recent progress in performance coupled with a decline in price for copper-based gigabit Ethernet (GigE) interconnects makes them an attractive alternative to expensive high speed network interconnects (NIC) when constructing Linux clusters. However traditional message passing systems based on TCP for GigE interconnects cannot fully utilize the raw performance of today's GigE interconnects due to the overhead of kernel involvement and multiple memory copies during sending and receiving messages. The overhead is more evident in the case of mesh connected Linux clusters using multiple GigE interconnects in a single host. We present a general message passing system called QMP-MVIA (QCD Message Passing over M-VIA) for Linux clusters with mesh connections using GigE interconnects. In particular, we evaluate and compare the performance characteristics of TCP and M-VIA (an implementation of the VIA specification) software for a mesh communication architecture to demonstrate the feasibility of using M-VIA as a point-to-point communication software, on which QMP-MVIA is based. Furthermore, we illustrate the design and implementation of QMP-MVIA for mesh connected Linux clusters with emphasis on both point-to-point and collective communications, and demonstrate that QMP-MVIA message passing system using GigE interconnects achieves bandwidth and latency that are not only better than systems based on TCP but also compare favorably to systems using some of the specialized high speed interconnects in a switched architecture at much lower cost.

  20. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmoreto higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.less

  1. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  2. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; Worschech, L.; Grutzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  3. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  4. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  5. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

    SciTech Connect (OSTI)

    Li, Yi; Liu, Bin E-mail: rzhang@nju.edu.cn; Zhang, Rong E-mail: rzhang@nju.edu.cn; Xie, Zili; Zhuang, Zhe; Dai, JiangPing; Tao, Tao; Zhi, Ting; Zhang, Guogang; Chen, Peng; Ren, Fangfang; Zhao, Hong; Zheng, Youdou

    2015-04-21

    Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620?nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%53% as compared to that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.

  6. Assessment of the single-pass thick-seam longwall mining method. Final report

    SciTech Connect (OSTI)

    Adam, R.F.J.; Douglas, W.J.

    1982-04-01

    The objectives of the project are a review of the foreign experiences in longwall mining of thick seams, an evaluation of the US thick seam reserves, a mine design, equipment specifications, and an economic study for longwall mining in a single pass up to 16 feet in US conditions. The review of foreign experience shows a steady increase in the maximum height of extraction with several examples in the range of 13 to 15 feet. Longwall face equipment is available up to an 18 feet height of extraction, based upon shields support and shearer loader. There are important reserves of thick coal seams which can be mined by a longwall in a single pass (125 billion tons). In US conditions, a retreating face with a 16 foot height of extraction and a double entry system, driven 10 feet high, are proposed. The face stability can be improved by using a two bench face cut in good geological conditions. The economic study compares longwall mining with the room-and-pillar method. Longwall mining 16 feet high coal in a single pass can compete advantageously with room-and-pillar mining. 74 figures, 14 tables.

  7. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect (OSTI)

    Lekhal, K.; Damilano, B. De Mierry, P.; Venngus, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570600?nm) emitting In{sub x}Ga{sub 1?x}N/Al{sub y}Ga{sub 1?y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1?x}N QWs by the Al{sub y}Ga{sub 1?y}N layers, respectively.

  8. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgl Okur; Akdemir, Hande Gnay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  9. Development of polarization-controlled multi-pass Thomson scattering system in the GAMMA 10 tandem mirror

    SciTech Connect (OSTI)

    Yoshikawa, M.; Morimoto, M.; Shima, Y.; Kohagura, J.; Sakamoto, M.; Nakashima, Y.; Imai, T. [Plasma Research Center, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan); Yasuhara, R.; Yamada, I.; Kawahata, K.; Funaba, H. [National Institute for Fusion Science, 322-6 Oroshi-cho, Toki, Gifu 509-5292 (Japan); Minami, T. [Institute of Advanced Energy, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan)

    2012-10-15

    In the GAMMA 10 tandem mirror, the typical electron density is comparable to that of the peripheral plasma of torus-type fusion devices. Therefore, an effective method to increase Thomson scattering (TS) signals is required in order to improve signal quality. In GAMMA 10, the yttrium-aluminum-garnet (YAG)-TS system comprises a laser, incident optics, light collection optics, signal detection electronics, and a data recording system. We have been developing a multi-pass TS method for a polarization-based system based on the GAMMA 10 YAG TS. To evaluate the effectiveness of the polarization-based configuration, the multi-pass system was installed in the GAMMA 10 YAG-TS system, which is capable of double-pass scattering. We carried out a Rayleigh scattering experiment and applied this double-pass scattering system to the GAMMA 10 plasma. The integrated scattering signal was made about twice as large by the double-pass system.

  10. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M.; Giddings, A. D.; Prosa, T. J.; Larson, D. J.; Mano, T.

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  11. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8??10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  12. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  13. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  14. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  15. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  16. EA-1968: Site-Wide Environmental Assessment of the U.S. Department of Energy National Renewable Energy Laboratory (NREL) South Table Mountain (STM) Campus, Golden, Colorado

    Broader source: Energy.gov [DOE]

    DOE is preparing a Site-Wide Environmental Assessment to analyze the potential environmental impacts of possible site operations and improvements over the next five to ten years at DOE’s STM campus of NREL and nearby leased support facilities in Golden, Colorado. This proposed action would support DOE’s mission to research, develop, and deploy energy efficiency and renewable energy technologies and would consist of: • Research, routine laboratory, and site operation enhancements • New building construction and modifications of existing buildings • Infrastructure and utilities upgrades and enhancements

  17. Biogas and Fuel Cells Workshop Summary Report: Proceedings from the Biogas and Fuel Cells Workshop, Golden, Colorado, June 11-13, 2012

    SciTech Connect (OSTI)

    Not Available

    2013-01-01

    The U.S. Department of Energy (DOE) National Renewable Energy Laboratory (NREL) held a Biogas and Fuel Cells Workshop June 11-13, 2012, in Golden, Colorado, to discuss biogas and waste-to-energy technologies for fuel cell applications. The overall objective was to identify opportunities for coupling renewable biomethane with highly efficient fuel cells to produce electricity; heat; combined heat and power (CHP); or combined heat, hydrogen and power (CHHP) for stationary or motive applications. The workshop focused on biogas sourced from wastewater treatment plants (WWTPs), landfills, and industrial facilities that generate or process large amounts of organic waste, including large biofuel production facilities (biorefineries).

  18. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  19. Method and system for compact, multi-pass pulsed laser amplifier

    SciTech Connect (OSTI)

    Erlandson, Alvin Charles

    2014-11-25

    A laser amplifier includes an input aperture operable to receive laser radiation having a first polarization, an output aperture coupled to the input aperture by an optical path, and a polarizer disposed along an optical path. A transmission axis of the polarizer is aligned with the first polarization. The laser amplifier also includes n optical switch disposed along the optical path. The optical switch is operable to pass the laser radiation when operated in a first state and to reflect the laser radiation when operated in a second state. The laser amplifier further includes an optical gain element disposed along the optical path and a polarization rotation device disposed along the optical path.

  20. Wake deficit measurements on the Jess and Souza Ranches, Altamont Pass

    SciTech Connect (OSTI)

    Nierenburg, R. (Altamont Energy Corp., San Rafael, CA (USA))

    1990-04-01

    This report is ninth in a series of documents presenting the findings of field test under DOE's Cooperative Field Test Program (CFTP) with the wind industry. This report provides results of a project conducted by Altamont Energy Corp. (AEC) to measure wake deficits on the Jess and Sousa Ranches in Altamont Pass, CA. This research enhances and complements other DOE-funded projects to refine estimates of wind turbine array effects. This project will help explain turbine performance variability caused by wake effects. 4 refs., 28 figs., 106 tabs.

  1. Laboratory Studies of the Effects of Pressure and Dissolved Gas Supersaturation on Turbine-Passed Fish

    SciTech Connect (OSTI)

    Neitzel, Duane A.

    2009-09-14

    Migratory and resident fish in the Columbia River Basin are exposed to stresses associated with hydroelectric power production, including changes in pressure as they pass through turbines and dissolved gas supersaturation (resulting from the release of water from the spillway). To examine pressure changes as a source of turbine-passage injury and mortality, Pacific Northwest National Laboratory scientists conducted specific tests using a hyperbaric chamber. Tests were designed to simulate Kaplan turbine passage conditions and to quantify the response of fish to rapid pressure changes, with and without the complication of fish being acclimated to gas-supersaturated water.

  2. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

    SciTech Connect (OSTI)

    Ji, Hai-Ming; Liang, Baolai Simmonds, Paul J.; Juang, Bor-Chau; Yang, Tao; Young, Robert J.; Huffaker, Diana L.

    2015-03-09

    We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

  3. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  4. Golden Field Office

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... waters, 500 to 1,000 feet offshore of Dyce Head in Castine, Maine for a period of ... in nature, and the applicant committed measures listed in Chapter 2.5 of the final ...

  5. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  6. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper; Reedy, Robert

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  7. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  8. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  9. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  10. Reactive codoping of GaAlInP compound semiconductors (Patent...

    Office of Scientific and Technical Information (OSTI)

    Report Number(s): 7,329,554 US patent application DOE Contract Number: AC36-99GO10337 Resource Type: Patent Research Org: National Renewable Energy Laboratory (NREL), Golden, CO

  11. Geology and geothermal resources of the Santiam Pass area of the Oregon Cascade Range, Deschutes, Jefferson and Linn Counties, Oregon

    SciTech Connect (OSTI)

    Hill, B.E. (ed.)

    1992-10-01

    This open-file report presents the results of the Santiam Pass drilling program. The first phase of this program was to compile all available geological, geophysical and geothermal data for the Santiam Pass area and select a drill site on the basis of these data (see Priest and others, 1987a), A summary of the drilling operations and costs associated with the project are presented in chapter 1 by Hill and Benoit. An Overview of the geology of the Santiam Pass area is presented by Hill and Priest in chapter 2. Geologic mapping and isotopic age determinations in the Santiam Pass-Mount Jefferson area completed since 1987 are summarized in chapter 2. One of the more important conclusions reached in chapter 2 is that a minimum of 2 km vertical displacement has occurred in the High Cascade graben in the Santiam Pass area. The petrology of the Santiam Pass drill core is presented by Hill in chapter 3. Most of the major volcanic units in the core have been analyzed for major, minor, and trace element abundances and have been studied petrographically. Three K-Ar ages are interpreted in conjunction with the magnetostratigraphy of the core to show that the oldest rocks in the core are approximately 1.8 Ma. Geothermal and geophysical data collected from the Santiam Pass well are presented by Blackwell in chapter 4. The Santiam Pass well failed to penetrate beneath the zone of lateral groundwater flow associated with highly permeable Quaternary volcanic rocks. Calculated geothermal gradients range from about 50[degree]C/km at depth 700-900 m, to roughly 110[degree]C/km from 900 m to the bottom of the well at 929 m. Heat-flow values for the bottom part of the hole bracket the regional average for the High Cascades. Blackwell concludes that heat flow along the High Cascades axis is equal to or higher than along the western edge of the High Cascades.

  12. Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

    SciTech Connect (OSTI)

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-09-27

    The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A toward [110] were characterized and discussed by using deep level transient spectroscopy (DLTS) and on the basis of temperature dependence of the junction capacitances (C{sub J}). In one hand, GaAsN films grown on GaAs 311B and GaAs 10A showed n-type and p-type conductivities, respectively although the similar and simultaneous growth conditions. This result is indeed in contrast to the common known effect of N concentration on the type of conductivity, since the surface 311B showed a significant improvement in the incorporation of N. Furthermore, the temperature dependence of C{sub J} has shown that GaAs 311B limits the formation of N-H defects. In the other hand, the energy states in the forbidden gap of GaAsN were obtained. Six electron traps, E1 to E6, were observed in the DLTS spectrum of GaAsN grown on GaAs 311B, with apparent activation energies of 0.02, 0.14, 0.16, 0.33, 0.48, and 0.74 eV below the bottom edge of the conduction band, respectively. In addition, four hole traps, H1 to H4, were observed in the DLTS spectrum of GaAsN grown on GaAs 10A, with energy depths of 0.13, 0.20, 0.39, and 0.52 eV above the valence band maximum of the alloy, respectively. Hence, the surface morphology of the GaAs substrate was found to play a key factor role in clarifying the electrical properties of GaAsN grown by CBE.

  13. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  14. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  15. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  16. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli; Wang, Jianfeng; Ren, Guoqiang; Xu, Ke

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  17. High-Efficiency GaAs Thin-Film Solar Cell Reliability | Department of

    Broader source: Energy.gov (indexed) [DOE]

    Energy Presented at the PV Module Reliability Workshop, February 26 - 27 2013, Golden, Colorado PDF icon pvmrw13_ps2_alta_li.pdf More Documents & Publications Agenda for the PV Module Reliability Workshop, February 26 - 27 2013, Golden, Colorado Sensitivities of I-V Parameters in C-Si PV Modules of Hygrothermal Stress Final Report - Vapor Transport Deposition for III-V Thin Film Photovoltaics

  18. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  19. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Young, M. P.; Woodhead, C. S.; Roberts, J.; Noori, Y. J.; Noble, M. T.; Krier, A.; Hayne, M.; Young, R. J.; Smakman, E. P.; Koenraad, P. M.

    2014-11-15

    We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 ?eV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.

  20. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. ); Koploy, M.A. )

    1992-01-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  1. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J.; Koploy, M.A.

    1992-08-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  2. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  3. AVTA Federal Fleet PEV Readiness Data Logging and Characterization Study for the National Park Service: Golden Gate National Recreation Area

    SciTech Connect (OSTI)

    Stephen Schey; Jim Francfort

    2014-03-01

    Battelle Energy Alliance, LLC, managing and operating contractor for the U.S. Department of Energy's Idaho National Laboratory, is the lead laboratory for U.S. Department of Energy Advanced Vehicle Testing. Battelle Energy Alliance, LLC contracted with Intertek Testing Services, North America (ITSNA) to collect data on federal fleet operations as part of the Advanced Vehicle Testing Activity's Federal Fleet Vehicle Data Logging and Characterization study. The Advanced Vehicle Testing Activity study seeks to collect data to validate the utilization of advanced electric drive vehicle transportation. This report focuses on the Golden Gate National Recreation Area (GGNRA) fleet to identify daily operational characteristics of select vehicles and report findings on vehicle and mission characterizations to support the successful introduction of plug-in electric vehicles (PEVs) into the agencies' fleets. Individual observations of these selected vehicles provide the basis for recommendations related to electric vehicle adoption and whether a battery electric vehicle or plug-in hybrid electric vehicle (PHEV) (collectively PEVs) can fulfill the mission requirements. GGNRA identified 182 vehicles in its fleet, which are under the management of the U.S. General Services Administration. Fleet vehicle mission categories are defined in Section 4, and while the GGNRA vehicles conduct many different missions, only two (i.e., support and law enforcement missions) were selected by agency management to be part of this fleet evaluation. The selected vehicles included sedans, trucks, and sport-utility vehicles. This report will show that battery electric vehicles and/or PHEVs are capable of performing the required missions and providing an alternative vehicle for support vehicles and PHEVs provide the same for law enforcement, because each has a sufficient range for individual trips and time is available each day for charging to accommodate multiple trips per day. These charging events could occur at the vehicle home base, high-use work areas, or intermediately along routes that the vehicles frequently travel. Replacement of vehicles in the current fleet would result in significant reductions in the emission of greenhouse gases and petroleum use, while also reducing fuel costs. The San Francisco Bay Area is a leader in the adoption of PEVs in the United States. PEV charging stations, or more appropriately identified as electric vehicle supply equipment, located on the GGNRA facility would be a benefit for both GGNRA fleets and general public use. Fleet drivers and park visitors operating privately owned PEVs benefit by using the charging infrastructure. ITSNA recommends location analysis of the GGNRA site to identify the optimal placement of the electric vehicle supply equipment station. ITSNA recognizes the support of Idaho National Laboratory and ICF International for their efforts to initiate communication with the National Parks Service and GGNRA for participation in the study. ITSNA is pleased to provide this report and is encouraged by the high interest and support from the National Park Service and GGNRA personnel.

  4. Surface effects in the energy loss of ions passing through a thin foil

    SciTech Connect (OSTI)

    Osma, J.

    1997-09-01

    The role of surface plasmon excitation in the interaction of ions passing through thin films has been studied in both the Bloch hydrodynamic approximation and the local response approach for projectile velocities above the maximum of the stopping power curve. The effect of the surface is found to be much weaker when the dispersion of the modes is taken into consideration than in the case of nondispersive media, though qualitatively the main features of the hydrodynamic approach resemble those of the local one. A generalization of the Bothe-Landau convolution formula for the loss probability distribution is derived to take into account the scattering due to the surface. The effects of the surface in the energy-loss spectra are discussed. A comparison with experiment is given. {copyright} {ital 1997} {ital The American Physical Society}

  5. Understanding barotrauma in fish passing hydro structures: a global strategy for sustainable development of water resources

    SciTech Connect (OSTI)

    Brown, Richard S.; Colotelo, Alison HA; Pflugrath, Brett D.; Boys, Craig A.; Baumgartner, Lee J.; Deng, Zhiqun; Silva, Luiz G.; Brauner, Colin J.; Mallen-Cooper, Martin; Phonekhampeng, Oudom; Thorncraft, Garry; Singhanouvong, Douangkham

    2014-03-24

    Freshwater fishes are one of the most imperiled groups of vertebrates and species declines have been linked to a number of anthropogenic influences. This is alarming as the diversity and stability of populations are at risk. In addition, freshwater fish serve as important protein sources, particularly in developing countries. One of the focal activities thought to influence freshwater fish population declines is water resource development, which is anticipated to increase over the next several decades. For fish encountering hydro structures, such as passing through hydroturbines, there may be a rapid decrease in pressure which can lead to injuries commonly referred to as barotraumas. The authors summarize the research to date that has examined the effects of rapid pressure changes on fish and outline the most important factors to consider (i.e., swim bladder morphology, depth of acclimation, migration pattern and life stage) when examining the susceptibility of barotraumas for fish of interest.

  6. Intrinsic low pass filtering improves signal-to-noise ratio in critical-point flexure biosensors

    SciTech Connect (OSTI)

    Jain, Ankit; Alam, Muhammad Ashraful

    2014-08-25

    A flexure biosensor consists of a suspended beam and a fixed bottom electrode. The adsorption of the target biomolecules on the beam changes its stiffness and results in change of beam's deflection. It is now well established that the sensitivity of sensor is maximized close to the pull-in instability point, where effective stiffness of the beam vanishes. The question: Do the signal-to-noise ratio (SNR) and the limit-of-detection (LOD) also improve close to the instability point?, however remains unanswered. In this article, we systematically analyze the noise response to evaluate SNR and establish LOD of critical-point flexure sensors. We find that a flexure sensor acts like an effective low pass filter close to the instability point due to its relatively small resonance frequency, and rejects high frequency noise, leading to improved SNR and LOD. We believe that our conclusions should establish the uniqueness and the technological relevance of critical-point biosensors.

  7. A new maximum-likelihood change estimator for two-pass SAR coherent change detection

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wahl, Daniel E.; Yocky, David A.; Jakowatz, Jr., Charles V.; Simonson, Katherine Mary

    2016-01-11

    In past research, two-pass repeat-geometry synthetic aperture radar (SAR) coherent change detection (CCD) predominantly utilized the sample degree of coherence as a measure of the temporal change occurring between two complex-valued image collects. Previous coherence-based CCD approaches tend to show temporal change when there is none in areas of the image that have a low clutter-to-noise power ratio. Instead of employing the sample coherence magnitude as a change metric, in this paper, we derive a new maximum-likelihood (ML) temporal change estimate—the complex reflectance change detection (CRCD) metric to be used for SAR coherent temporal change detection. The new CRCD estimatormore » is a surprisingly simple expression, easy to implement, and optimal in the ML sense. As a result, this new estimate produces improved results in the coherent pair collects that we have tested.« less

  8. GaP/Si heterojunction Solar Cells

    SciTech Connect (OSTI)

    Saive, R.; Chen, C.; Emmer, H.; Atwater, H.

    2015-05-11

    Improving the efficiency of solar cells requires the introduction of novel device concepts. Recent developments have shown that in Si solar cell technology there is still room for tremendous improvement. Using the heterojunction with intrinsic thin layer (HIT) approach 25.6 % power conversion efficiency was achieved. However, a-Si as a window and passivation layer comes with disadvantages as a-Si shows low conductivity and high parasitic absorption. Therefore, it is likely that using a crystalline material as window layer with high band gab and high mobility can further improve efficiency. We have studied GaP grown by MOCVD on Si with (001) and (112) orientation. We obtained crystalline layers with carrier mobility around 100 cm2/Vs and which passivate Si as confirmed by carrier lifetime measurements. We performed band alignment studies by X-ray photoelectron spectroscopy yielding a valence band offset of 0.3 eV. Comparing this value with the Schottky-model leads to an interface dipole of 0.59 eV. The open circuit voltage increases with increasing doping and is consistent with the theoretical open circuit voltage deduced from work function difference and interface dipole. We obtain an open circuit voltage of 0.38 V for n-doped GaP with doping levels in the order of 10^17 1/cm^3. In our next steps we will increase the doping level further in order to gain higher open circuit voltage. We will discuss the implications of these findings for GaP/Si heterojunction solar cells.

  9. Distributed bragg reflector using AIGaN/GaN

    DOE Patents [OSTI]

    Waldrip, Karen E.; Lee, Stephen R.; Han, Jung

    2004-08-10

    A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

  10. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  11. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  12. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  13. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    SciTech Connect (OSTI)

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  14. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  15. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  16. fe0013961-GaTech | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Performer Georgia Tech Research Corporation, Atlanta GA 30332 Background While earlier research focused on the properties of the hydrate mass per se (Sloan Jr and Koh 2007), ...

  17. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19 }m{sup −2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  18. Photoluminescence from GaAs nanodisks fabricated by using combination...

    Office of Scientific and Technical Information (OSTI)

    GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth Citation Details In-Document Search Title:...

  19. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  20. Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well

    Office of Scientific and Technical Information (OSTI)

    lasers on InP substrate (Journal Article) | SciTech Connect Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well lasers on InP substrate Citation Details In-Document Search Title: Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well lasers on InP substrate We have demonstrated experimentally the InP-based "M"-type GaAsSb/InGaAs quantum-well (QW) laser lasing at 2.41 μm at room temperature by optical pumping. The threshold power density

  1. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  2. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  3. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  4. Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN.

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN. Citation Details In-Document Search Title: Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN. Abstract not provided. Authors: Ihlefeld, Jon ; Brumbach, Michael T. ; Allerman, Andrew A. ; Wheeler, David Roger ; Atcitty, Stanley Publication Date: 2015-01-01 OSTI Identifier: 1244879 Report Number(s): SAND2015-0073C 558329 DOE Contract Number: AC04-94AL85000 Resource

  5. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  6. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N. E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M. E-mail: Martin.Kuball@bristol.ac.uk; Paskova, T.; Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 ; Evans, K. R.; Leach, J.; Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 ; Li, X.; Özgür, Ü.; Morkoç, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  7. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

    SciTech Connect (OSTI)

    Tsatsulnikov, A. F. Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Kryzhanovskaya, N. V.; Synitsin, M. A.; Sizov, V. S.; Zakgeim, A. L.; Mizerov, M. N.

    2010-06-15

    A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue and yellow-green spectral ranges. The optical properties of structures of this kind have been studied, and it is demonstrated that the use of such a superlattice makes it possible to obtain effective emission from the active region.

  8. Uranium hydrogeochemical and stream sediment reconnaissance of the Survey Pass NTMS quadrangle, Alaska

    SciTech Connect (OSTI)

    Shettel, D.L. Jr.; Langfeldt, S.L.; Youngquist, C.A.; D'Andrea, R.F. Jr.; Zinkl, R.J.

    1981-09-01

    This report presents results of a Hydrogeochemical and Stream Sediment Reconnaissance (HSSR) of the Survey Pass NTMS quadrangle, Alaska. In addition to this abbreviated data release, more complete data are available to the public in machine-readable form through the Grand Junction Office Information System at Oak Ridge National Laboratory. Presented in this data release are location data, field analyses, and laboratory analyses of several different sample media. For the sake of brevity, many field site observations have not been included in this volume. These data are, however, available on the magnetic tape. Appendix A describes the sample media and summarizes the analytical results for each medium. The data were subdivided by one of the Los Alamos National Laboratory (LANL) sorting programs of Zinkl and others (1981a) into stream sediment samples. For the group which contains a sufficient number of observations, statistical tables, tables of raw data, and 1:1000000 scale maps of pertinent elements have been included in this report. In addition, maps showing results of multivariate statistical analyses have been included. Further information about the HSSR program in general, or about the LANL portion of the program in particular, can be obtained in quarterly or semiannual program progress reports on open-file at DOE's Technical Library in Grand Junction. Information about the field and analytical procedures used by LANL during sample collection and analysis may be found in any HSSR data release prepared by the LANL and will not be included in this report.

  9. Distributed control of multi-robot teams: Cooperative baton passing task

    SciTech Connect (OSTI)

    Parker, L.E.

    1998-11-01

    This research addresses the problem of achieving fault tolerant cooperation within small- to medium-sized teams of heterogeneous mobile robots. The author describes a novel behavior-based, fully distributed architecture, called ALLIANCE, that utilizes adaptive action selection to achieve fault tolerant cooperative control. The robots in this architecture possess a variety of high-level functions that they can perform during a mission, and must at all times select an appropriate action based on the requirements of the mission, the activities of other robots, the current environmental conditions, and their own internal states. Since such cooperative teams often work in dynamic and unpredictable environments, the software architecture allows the team members to respond robustly and reliably to unexpected environmental changes and modifications in the robot team that may occur due to mechanical failure, the learning of new skills, or the addition or removal of robots from the team by human intervention. After presenting ALLIANCE, they describe the implementation of this architecture on a team of physical mobile robots performing a cooperative baton passing task. These experiments illustrate the ability of ALLIANCE to achieve adaptive, fault-tolerant cooperative control amidst dynamic changes during the task.

  10. Parametric analysis of plastic strain and force distribution in single pass metal spinning

    SciTech Connect (OSTI)

    Choudhary, Shashank E-mail: mohantejesh93@gmail.com E-mail: ksuresh@hyderabad.bits-pilani.ac.in; Tejesh, Chiruvolu Mohan E-mail: mohantejesh93@gmail.com E-mail: ksuresh@hyderabad.bits-pilani.ac.in; Regalla, Srinivasa Prakash E-mail: mohantejesh93@gmail.com E-mail: ksuresh@hyderabad.bits-pilani.ac.in; Suresh, Kurra E-mail: mohantejesh93@gmail.com E-mail: ksuresh@hyderabad.bits-pilani.ac.in

    2013-12-16

    Metal spinning also known as spin forming is one of the sheet metal working processes by which an axis-symmetric part can be formed from a flat sheet metal blank. Parts are produced by pressing a blunt edged tool or roller on to the blank which in turn is mounted on a rotating mandrel. This paper discusses about the setting up a 3-D finite element simulation of single pass metal spinning in LS-Dyna. Four parameters were considered namely blank thickness, roller nose radius, feed ratio and mandrel speed and the variation in forces and plastic strain were analysed using the full-factorial design of experiments (DOE) method of simulation experiments. For some of these DOE runs, physical experiments on extra deep drawing (EDD) sheet metal were carried out using En31 tool on a lathe machine. Simulation results are able to predict the zone of unsafe thinning in the sheet and high forming forces that are hint to the necessity for less-expensive and semi-automated machine tools to help the household and small scale spinning workers widely prevalent in India.

  11. Streaming data analytics via message passing with application to graph algorithms

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Plimpton, Steven J.; Shead, Tim

    2014-05-06

    The need to process streaming data, which arrives continuously at high-volume in real-time, arises in a variety of contexts including data produced by experiments, collections of environmental or network sensors, and running simulations. Streaming data can also be formulated as queries or transactions which operate on a large dynamic data store, e.g. a distributed database. We describe a lightweight, portable framework named PHISH which enables a set of independent processes to compute on a stream of data in a distributed-memory parallel manner. Datums are routed between processes in patterns defined by the application. PHISH can run on top of eithermore » message-passing via MPI or sockets via ZMQ. The former means streaming computations can be run on any parallel machine which supports MPI; the latter allows them to run on a heterogeneous, geographically dispersed network of machines. We illustrate how PHISH can support streaming MapReduce operations, and describe streaming versions of three algorithms for large, sparse graph analytics: triangle enumeration, subgraph isomorphism matching, and connected component finding. Lastly, we also provide benchmark timings for MPI versus socket performance of several kernel operations useful in streaming algorithms.« less

  12. Streaming data analytics via message passing with application to graph algorithms

    SciTech Connect (OSTI)

    Plimpton, Steven J.; Shead, Tim

    2014-05-06

    The need to process streaming data, which arrives continuously at high-volume in real-time, arises in a variety of contexts including data produced by experiments, collections of environmental or network sensors, and running simulations. Streaming data can also be formulated as queries or transactions which operate on a large dynamic data store, e.g. a distributed database. We describe a lightweight, portable framework named PHISH which enables a set of independent processes to compute on a stream of data in a distributed-memory parallel manner. Datums are routed between processes in patterns defined by the application. PHISH can run on top of either message-passing via MPI or sockets via ZMQ. The former means streaming computations can be run on any parallel machine which supports MPI; the latter allows them to run on a heterogeneous, geographically dispersed network of machines. We illustrate how PHISH can support streaming MapReduce operations, and describe streaming versions of three algorithms for large, sparse graph analytics: triangle enumeration, subgraph isomorphism matching, and connected component finding. Lastly, we also provide benchmark timings for MPI versus socket performance of several kernel operations useful in streaming algorithms.

  13. Sluiceway Operations to Pass Juvenile Salmonids at The Dalles Dam, Columbia River, USA

    SciTech Connect (OSTI)

    Johnson, Gary E.; Khan, Fenton; Skalski, J. R.; Klatte, Bernard A.

    2013-11-20

    Existing ice and trash sluiceways are commonly used to pass juvenile salmonids downstream at hydropower dams through a benign, non-turbine route. At The Dalles Dam on the Columbia River, managers undertook optimizing operations of sluiceway weirs to maximize survival of juvenile salmonids at the powerhouse. We applied fixed-location hydroacoustic methods to compare fish passage rates and sluiceway efficiencies for two weir configurations during 2004 and 2005: three weirs versus six weirs, located at the mid- versus east powerhouse, respectively. We also analyzed horizontal distributions of passage at the sluiceway and turbines and the effects of operating turbines beneath open sluiceway gates to provide supporting data relevant to operations optimization. Based on the findings, we recommend the following for long-term operations for the sluiceway at The Dalles Dam: open six rather than three sluiceway weirs to take advantage of the maximum hydraulic capacity of the sluiceway; open the three weirs above the western-most operating main turbine unit (MU) and the three weirs at MU 8 where turbine passage rates are relatively high; operate the turbine units below open sluiceway weirs as a standard procedure; operate the sluiceway 24 h/d year-round to maximize its benefits to juvenile salmonids; and use the same operations for spring and summer emigrants. These operational concepts are transferable to dams where sluiceway surface flow outlets are used protect downstream migrating fishes.

  14. Free-flow variability on the Jess and Souza Ranches, Altamont Pass

    SciTech Connect (OSTI)

    Nierenberg, R.

    1989-03-01

    This report is one of a series of such documents that present the findings of field tests conducted under the Department of Energy's (DOE) Cooperative Field Test Program with the US wind industry. The report provides the results of a study to collect data at two windfarms. The two wind turbine arrays, located in the Altamont Pass east of San Francisco, were instrumented with anemometers and a central monitoring computer. To obtain a high spatial density of wind-speed measurements, every other turbine in both arrays was instrumented. Wind-speed data were collected over a period of four days during the summer high-wind season with all turbines shut down. The resultant data set was analyzed to determine the spatial variability of the wind resource in the two arrays. Because no turbine wakes were present, variation in the flow was caused by the interaction of the flow with the terrain and was not a function of turbine wake interaction. The free-flow data sets can be used by other researchers to refine numerical free-flow computer models. The data sets will be used to fine tune and validate these computer models. In addition, the free-flow data will be compared to results of a wake energy deficit study also under way on these turbine arrays. 56 figs., 14 tabs.

  15. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  16. Long-wavelength shift and enhanced room temperature photoluminescence efficiency in GaAsSb/InGaAs/GaAs-based heterostructures emitting in the spectral range of 1.01.2??m due to increased charge carrier's localization

    SciTech Connect (OSTI)

    Kryzhkov, D. I. Yablonsky, A. N.; Morozov, S. V.; Aleshkin, V. Ya.; Krasilnik, Z. F.; Zvonkov, B. N.; Vikhrova, O. V.

    2014-11-28

    In this work, a study of the photoluminescence (PL) temperature dependence in quantum well GaAs/GaAsSb and double quantum well InGaAs/GaAsSb/GaAs heterostructures grown by metalorganic chemical vapor deposition with different parameters of GaAsSb and InGaAs layers has been performed. It has been demonstrated that in double quantum well InGaAs/GaAsSb/GaAs heterostructures, a significant shift of the PL peak to a longer-wavelength region (up to 1.2??m) and a considerable reduction in the PL thermal quenching in comparison with GaAs/GaAsSb structures can be obtained due to better localization of charge carriers in the double quantum well. For InGaAs/GaAsSb/GaAs heterostructures, an additional channel of radiative recombination with participation of the excited energy states in the quantum well, competing with the main ground-state radiative transition, has been revealed.

  17. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  18. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  19. Ultrafast dynamics of type-II GaSb/GaAs quantum dots

    SciTech Connect (OSTI)

    Komolibus, K.; Piwonski, T.; Gradkowski, K.; Reyner, C. J.; Liang, B.; Huffaker, D. L.; Huyet, G.; Houlihan, J.

    2015-01-19

    In this paper, room temperature two-colour pump-probe spectroscopy is employed to study ultrafast carrier dynamics in type-II GaSb/GaAs quantum dots. Our results demonstrate a strong dependency of carrier capture/escape processes on applied reverse bias voltage, probing wavelength and number of injected carriers. The extracted timescales as a function of both forward and reverse bias may provide important information for the design of efficient solar cells and quantum dot memories based on this material. The first few picoseconds of the dynamics reveal a complex behaviour with an interesting feature, which does not appear in devices based on type-I materials, and hence is linked to the unique carrier capture/escape processes possible in type-II structures.

  20. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  1. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-μm transport was observed within an electron spin lifetime of 1.2 ns at room temperature when using an in-plane electric field of 1.75 kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  2. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  3. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  4. Reactive codoping of GaAlInP compound semiconductors (Patent...

    Office of Scientific and Technical Information (OSTI)

    Patent: Reactive codoping of GaAlInP compound semiconductors Citation Details In-Document Search Title: Reactive codoping of GaAlInP compound semiconductors A GaAlInP compound ...

  5. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  6. Thermal Design and Characterization of Heterogeneously Integrated InGaP/GaAs HBTs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Choi, Sukwon; Peake, Gregory M.; Keeler, Gordon A.; Geib, Kent M.; Briggs, Ronald D.; Beechem, Thomas E.; Shaffer, Ryan A.; Clevenger, Jascinda; Patrizi, Gary A.; Klem, John F.; et al

    2016-04-21

    Flip-chip heterogeneously integrated n-p-n InGaP/GaAs heterojunction bipolar transistors (HBTs) with integrated thermal management on wide-bandgap AlN substrates followed by GaAs substrate removal are demonstrated. Without thermal management, substrate removal after integration significantly aggravates self-heating effects, causing poor I–V characteristics due to excessive device self-heating. An electrothermal codesign scheme is demonstrated that involves simulation (design), thermal characterization, fabrication, and evaluation. Thermoreflectance thermal imaging, electrical-temperature sensitive parameter-based thermometry, and infrared thermography were utilized to assess the junction temperature rise in HBTs under diverse configurations. In order to reduce the thermal resistance of integrated devices, passive cooling schemes assisted by structural modification, i.e.,more » positioning indium bump heat sinks between the devices and the carrier, were employed. By implementing thermal heat sinks in close proximity to the active region of flip-chip integrated HBTs, the junction-to-baseplate thermal resistance was reduced over a factor of two, as revealed by junction temperature measurements and improvement of electrical performance. In conclusion, the suggested heterogeneous integration method accounts for not only electrical but also thermal requirements providing insight into realization of advanced and robust III–V/Si heterogeneously integrated electronics.« less

  7. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect (OSTI)

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  8. Optical properties of multi-stacked InGaAs/GaNAs quantum dot solar cell fabricated on GaAs (311)B substrate

    SciTech Connect (OSTI)

    Shoji, Yasushi; Akimoto, Katsuhiro; Okada, Yoshitaka

    2012-09-15

    Quantum dot solar cells (QDSCs) comprised of 10 stacked pairs of strain-compensated InGaAs/GaNAs QD structure have been fabricated by atomic hydrogen-assisted molecular beam epitaxy. A homogeneous and high-density QD array structure with improved in-plane ordering and total density of {approx}10{sup 12} cm{sup -2} has been achieved on GaAs (311)B grown at 460 Degree-Sign C after stacking. The external quantum efficiency (EQE) of InGaAs/GaNAs QDSC increases in the longer wavelength range due to additive contribution from QD layers inserted in the intrinsic region. The short-circuit current density measured for QDSC is 17.2 mA/cm{sup 2} compared to 14.8 mA/cm{sup 2} of GaAs reference cell. Further, an increase in EQE due to photocurrent production by 2-step photon absorption has been observed at room temperature though it is still small at around 0.1%.

  9. Study on a test of optical stochastic cooling scheme in a single pass beam line

    SciTech Connect (OSTI)

    Chattopadhyay, S.; Kim, C.; Massoletti, D.; Zholents, A.

    1997-01-01

    A feasibility study of an experiment to test the principle of optical stochastic cooling is presented. We propose to build a new beamline in the extraction area of the ALS Booster synchrotron, where we will include a bypass lattice similar to the lattice that could be used in the cooling insertion in a storage ring. Of course, in the single pass beamline we cannot achieve cooling, but we can test all the functions of the bypass lattice that are required to achieve cooling in a storage ring. As it is stated in, there are stringent requirements on the time-of-flight properties of the bypass lattice employed in a cooling scheme. The pathlengths of particle trajectories in the bypass must be fairly insensitive to the standard set of errors that usually affect the performance of storage rings. Namely, it is necessary to preserve all fluctuations in the longitudinal particle density within the beam from the beginning to the end of the bypass lattice with the accuracy of {lambda}/2{pi}, where A is the carrying (optical) wavelength. According to, cooling will completely vanish if a combined effect of all kinds of errors will produce a spread of the pathlengths of particle trajectories larger than {lambda}/2 and the cooling time will almost double if the spread of the pathlengths is {lambda}/2{pi}. At a first glance, {lambda}/2{pi} {approx_equal} 0.1/{mu}m is such a small value that satisfying this accuracy looks nearly impossible. However, simulations show that a carefully designed bypass can meet all the requirements even with rather conservative tolerance to errors.

  10. Simulating Blade-Strike on Fish passing through Marine Hydrokinetic Turbines

    SciTech Connect (OSTI)

    Romero Gomez, Pedro DJ; Richmond, Marshall C.

    2014-06-16

    The study reported here evaluated the occurrence, frequency, and intensity of blade strike of fish on an axial-flow marine hydrokinetic turbine by using two modeling approaches: a conventional kinematic formulation and a proposed Lagrangian particle- based scheme. The kinematic model included simplifying assumptions of fish trajectories such as distribution and velocity. The proposed method overcame the need for such simplifications by integrating the following components into a computational fluid dynamics (CFD) model: (i) advanced eddy-resolving flow simulation, (ii) generation of ambient turbulence based on field data, (iii) moving turbine blades in highly transient flows, and (iv) Lagrangian particles to mimic the potential fish pathways. The test conditions to evaluate the blade-strike probability and fish survival rate were: (i) the turbulent environment, (ii) the fish size, and (iii) the approaching flow velocity. The proposed method offered the ability to produce potential fish trajectories and their interaction with the rotating turbine. Depending upon the scenario, the percentile of particles that registered a collision event ranged from 6% to 19% of the released sample size. Next, by using a set of experimental correlations of the exposure-response of living fish colliding with moving blades, the simulated collision data were used as input variables to estimate the survival rate of fish passing through the operating turbine. The resulting survival rates were greater than 96% in all scenarios, which is comparable to or better than known survival rates for conventional hydropower turbines. The figures of strike probability and mortality rate were amplified by the kinematic model. The proposed method offered the advantage of expanding the evaluation of other mechanisms of stress and injury on fish derived from hydrokinetic turbines and related devices.

  11. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect (OSTI)

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  12. Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3??m

    SciTech Connect (OSTI)

    Goldmann, Elias Jahnke, Frank; Paul, Matthias; Kettler, Jan; Jetter, Michael; Michler, Peter; Krause, Florian F.; Mller, Knut; Mehrtens, Thorsten; Rosenauer, Andreas

    2014-10-13

    A combined experimental and theoretical study of InGaAs/GaAs quantum dots (QDs) emitting at 1.3??m under the influence of a strain-reducing InGaAs quantum well is presented. We demonstrate a red shift of 2040?nm observed in photoluminescence spectra due to the quantum well. The InGaAs/GaAs QDs grown by metal organic vapor phase epitaxy show a bimodal height distribution (1?nm and 5?nm) and indium concentrations up to 90%. The emission properties are explained with combined tight-binding and configuration-interaction calculations of the emission wavelengths in conjunction with high-resolution scanning transmission electron microscopy investigations of QD geometry and indium concentrations in the QDs, which directly enter the calculations. QD geometries and concentration gradients representative for the ensemble are identified.

  13. Analysis of Environmental Issues Related to Small-Scale Hydroelectric Development II: Design Consideration for Passing Fish Upstream Around Dams

    SciTech Connect (OSTI)

    Hildebrandt, S. G.; Bell, M. C.; Anderson, J. J.; Richey, E. P.; Parkhurst, Z. E.

    1980-08-01

    The purpose of this report is to provide general information for use by potential developers of small scale hydroelectric projects that will include facilities to pass migrating fish upstream around dams. The document is not intended to be a textbook on design of fish passage facilities, but rather to be a general guide to some factors that are important when designing such facilities.

  14. Announcement of Change in Public Meeting Location for the Northern Pass Transmission Line Project Published in the Federal Register

    Broader source: Energy.gov [DOE]

    The Department announces a change of location for the September 26, 2013 public scoping meeting for the Northern Pass Transmission Line Project to Colebrook Elementary School, 27 Dumont Street, Colebrook, NH. The meeting will be from 5 to 8 p.m.

  15. Development of a Single-Pass Cut-and-Chip Harvest System for Short Rotation Woody Crops

    Broader source: Energy.gov [DOE]

    Breakout Session 1B—Integration of Supply Chains I: Breaking Down Barriers Development of a Single-Pass Cut-and-Chip Harvest System for Short Rotation Woody Crops Timothy Volk, Senior Research Associate, State University of New York—College of Environmental Science and Forestry

  16. EIS-0501: FERC Project Update | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    FERC Project Update EIS-0501: FERC Project Update Golden Pass LNG Export and Pipeline Project, Texas and Louisiana After conducting scoping for an EA for the proposed Golden Pass ...

  17. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  18. Characterization of Zns-GaP Naon-composites

    SciTech Connect (OSTI)

    Todd, V.

    1993-12-09

    It proved possible to produce consistent, high-quality nanocrystalline ZnS powders with grain sizes as small as 8 nm. These powders are nano-porous and are readily impregnated with GaP precursor, although inconsistently. Both crystal structure and small grain size of the ZnS can be maintained through the use of GaP. Heat treatment of the impregnated powders results in a ZnS-GaP composite structure where the grain sizes of the phases are on the order of 10--20 nm. Conventional powder processing should be able to produce optically dense ceramic compacts with improved mechanical properties and suitable IR transmission.

  19. Outdoor Testing of GaInP2/GaAs Tandem Cells with Top Cell Thickness Varied

    SciTech Connect (OSTI)

    McMahon, W. E.; Emergy, K. E.; Friedman, D. J.; Ottoson, L.; Young, M. S.; Ward, J. S.; Kramer, C. M.; Duda, A.; Kurtz, S.

    2005-08-01

    In this study, we measure the performance of GaInP2/GaAs tandem cells under direct beam sunlight outdoors in order to quantify their sensitivity to both spectral variation and GaInP2 top-cell thickness. A set of cells with five different top-cell thicknesses was mounted on a two-axis tracker with the incident sunlight collimated to exclude all except the direct beam. Current-voltage (I-V) curves were taken throughout the course of several days, along with measurements of the direct solar spectrum. Our two major conclusions are: (1) GaInP2/GaAs tandem cells designed for either the ASTM G-173 direct (G-173D) spectrum or the "air mass 1.5 global" (AM1.5G) spectrum perform the best, and (2) cells can be characterized indoors and modeled using outdoor spectra with the same result. These results are equally valid for GaInP2/GaAs/Ge triple-junction cells.

  20. Making it pay in Athens, GA

    SciTech Connect (OSTI)

    Malloy, M.G.

    1997-04-01

    The materials recovery facility (MRF) in Athens, GA, is a well-fed recycling facility. But, if the local government has its way, it will be even better fed in the near future. The Athens-Clarke County (ACC) regional municipality in which the facility resides has a put-or-pay contract with the plant`s owner/operator, under which the more it feeds the MRF, the more money it receives in return, through the sale of recycled end products. The ACC Solid Waste Department uses a volume-based waste collection system that encourages residents to recycle--the more they recycle, the less trash they have to put out, and the less they pay each month. The Athens facility, which will be a featured site tour at next month`s WasteExpo `97 in nearby Atlanta, had its ground-breaking two years ago, in April 1995. ACC is responsible for delivering material--or seeing that recyclables are delivered--to the MRF, which is owned and operated by Resource Recovery Systems (RRS, Centerbrook, Conn.). Over the past year, ACC has stepped up various incentives for businesses to recycle and send their recyclables to the facility, including instituting pilot programs for commercial interests that offer them versions of volume-based collection similar to that done by residents.

  1. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  2. Application for presidential permit OE Docket No. PP-371 Northern Pass Transmission LLC: Public Scoping Period Reopened: Federal Register Volume 73, No. 183- Jun. 15, 2011

    Broader source: Energy.gov [DOE]

    The U.S. Department of Energy reopened the public scoping period for the Northern Pass Transmission Line Project Environmental Impact Statement (EIS).

  3. Application for presidential permit OE Docket No. PP-371 Northern Pass Transmission LLC: Federal Register Notice Volume 75, No. 220- Nov. 16, 2010

    Broader source: Energy.gov [DOE]

    Application from Northern Pass Transmission LLC to construct, operate, and maintain electric transmission facilities at the U.S-Canada border.. Federal Register Notice Vol 75 No 220.

  4. Northern Pass Transmission Line Project Environmental Impact Statement: Announcement of Change in Public Meeting Location: Federal Register Notice Volume 78, No. 181- September 18, 2013

    Broader source: Energy.gov [DOE]

    DOE has changed the location of the September 26 public scoping meeting for the Northern Pass Transmission Line Project to Colebrook Elementary School, 27 Dumont Street, Colebrook, NH.

  5. The U.S. Department of Energy is reopening the public scoping period for the Northern Pass Transmission Line Project Environmental Impact Statement (EIS).

    Broader source: Energy.gov [DOE]

    The U.S. Department of Energy is reopening the public scoping period for the Northern Pass Transmission Line Project Environmental Impact Statement (EIS).

  6. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  7. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

    SciTech Connect (OSTI)

    Guo, Lei; Yang, Xuelin Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Feng, Zhihong; Lv, Yuanjie; Wang, Xinqiang; Shen, B.; Ge, Weikun

    2014-12-15

    We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

  8. Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices

    SciTech Connect (OSTI)

    Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna

    2014-02-21

    We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

  9. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

    SciTech Connect (OSTI)

    Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing; Chen, Weixi; Ding, Ying

    2014-10-06

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ?51?nm at a center wavelength of 1060?nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

  10. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed; Whipple, Richard E.; Grant, Patrick M.; O'Brien, Jr., Harold A.

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  11. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect (OSTI)

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  12. Building America Case Study: Habitat for Humanity, The Woods at Golden Given, Tacoma, Washington (Fact Sheet), Whole-House Solutions for New Homes, Energy Efficiency & Renewable Energy (EERE)

    Energy Savers [EERE]

    Testing Ductless Heat Pumps in High-Performance Affordable Housing The Woods at Golden Given Tacoma, Washington PROJECT INFORMATION Construction: New home Type: Single-family, affordable Partners: Tacoma Public Utilities, mytpu.org Habitat for Humanity of Tacoma/ Pierce County, WA, tpc-habitat.org Building America Partnership for Improved Residential Construction, ba-pirc.org Size: 1,133-1,391 ft 2 (monitored), 950-2500 ft 2 (all homes) Date Completed: 2013-2015 Climate Zone: Marine PRELIMINARY

  13. High Quantum Efficiency AlGaN/InGaN Photodetectors

    SciTech Connect (OSTI)

    Buckley, James H; Leopold, Daniel

    2009-11-24

    High efficiency photon counting detectors in use today for high energy particle detection applications have a significant spectral mismatch with typical sources and have a number of practical problems compared with conventional bialkali photomultiplier tubes. Numerous high energy physics experiments that employ scintillation light detectors or Cherenkov detectors would benefit greatly from photomultipliers with higher quantum efficiencies. The need for extending the sensitivity of photon detectors to the blue and UV wavebands comes from the fact that both Cherenkov light and some scintillators have an emission spectrum which is peaked at short wavelengths. This research involves the development of high quantum efficiency, high gain, UV/blue photon counting detectors based on AlGaN/InGaN photocathode heterostructures grown by molecular beam epitaxy (MBE). The work could eventually lead to nearly ideal light detectors with a number of distinct advantages over existing technologies for numerous applications in high-energy physics and particle astrophysics. Potential advantages include much lower noise detection, better stability and radiation resistance than other cathode structures, very low radioactive background levels for deep underground experiments and high detection efficiency of individual UV-visible photons. We are also working on the development of photocathodes with intrinsic gain, initially improving the detection efficiency of hybrid semiconductor-vacuum tube devices, and eventually leading to an all-solid-state photomultiplier device.

  14. Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells

    SciTech Connect (OSTI)

    Lin, Chien-Hung Lee, Chien-Ping

    2014-10-21

    High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 μm were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5 meV.

  15. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    SciTech Connect (OSTI)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer has the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.

  16. A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT)

    SciTech Connect (OSTI)

    Tsai, Jung-Hui; Lee, Ching-Sung; Lour, Wen-Shiung; Ma, Yung-Chun; Ye, Sheng-Shiun

    2011-05-15

    Excellent characteristics of an InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT) are first demonstrated. The insertion of a thin n-GaAs emitter layer between tynneling confinement and base layers effectivelty eliminates the potential spike at base-emitter junction and reduces the collector-emitter offset voltage, while the thin InGaP tunneling confinement layer is employed to reduce the transporting time across emitter region for electrons and maintain the good confinement effect for holes. Experimentally, the studied T-HEBN exhibits a maximum current gain of 285, a relatively low offset voltage of 40 mW, and a current-gain cutoff frequency of 26.4 GHz.

  17. Quaternary AlInGaN/InGaN quantum well on vicinal c-plane substrate for high emission intensity of green wavelengths

    SciTech Connect (OSTI)

    Park, Seoung-Hwan; Pak, Y. Eugene; Park, Chang Young; Mishra, Dhaneshwar; Yoo, Seung-Hyun; Cho, Yong-Hee Shim, Mun-Bo; Kim, Sungjin

    2015-05-14

    Electronic and optical properties of non-trivial semipolar AlInGaN/InGaN quantum well (QW) structures are investigated by using the multiband effective-mass theory and non-Markovian optical model. On vicinal c-plane GaN substrate miscut by a small angle (??GaN/InGaN system is shown to have ?3 times larger spontaneous emission peak intensity than the conventional InGaN/GaN system at green wavelength. It is attributed to much larger optical matrix element of the quaternary AlInGaN/InGaN system, derived from the reduction of internal electric field induced by polarizations. This effect exceeds the performance-degrading factor of smaller quasi-Fermi-level separation for the quaternary AlInGaN/InGaN system than that for the conventional InGaN/GaN system. Results indicate that the use of quaternary III-nitride QWs on vicinal substrates may be beneficial in improving the performance of optical devices emitting green light.

  18. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect (OSTI)

    zduran, Mustafa; Turgut, Kemal; Arikan, Nihat; ?yigr, Ahmet; Candan, Abdullah

    2014-10-06

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  19. Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN

    Office of Scientific and Technical Information (OSTI)

    Sandia National Laboratories Exceptional service in the national interest SAND2015-0073C Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN 22 January 2015 Jon Ihlefeld, Michael Brumbach, Andrew A. Allerman, David R. Wheeler, and Stanley Atcitty This work was supported by the U.S. Department of Energy's Office of Electricity Delivery and Energy Reliability Program managed by Dr. Imre Gyuk and the Laboratory Directed Research and Development Program at Sandia National

  20. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  1. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  2. Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2

    SciTech Connect (OSTI)

    Hongpinyo, V; Ding, Y H; Dimas, C E; Wang, Y; Ooi, B S; Qiu, W; Goddard, L L; Behymer, E M; Cole, G D; Bond, T C

    2008-06-11

    The authors investigate the effect of intermixing in InGaAs/GaAs quantum well structure using Cu-doped SiO{sub 2}. The incorporation of Cu into the silica film yields larger bandgap shift than typical impurity-free vacancy diffusion (IFVD) method at a lower activation temperature. We also observe enhancement of the photoluminescence (PL) signal from the intermixed InGaAs/GaAs quantum well structure after being cycle-annealed at 850 C.

  3. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore » the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  4. Radiation damage of GaAs thin-film solar cells on Si substrates

    SciTech Connect (OSTI)

    Itoh, Y.; Yamaguchi, M.; Nishioka, T.; Yamamoto, A.

    1987-01-15

    1-MeV electron irradiation damages in GaAs thin-film solar cells on Si substrates are examined for the first time. Damage constant for minority-carrier diffusion length in GaAs heteroepitaxial films on Si substrates is found to be the same as that in GaAs homoepitaxial films on GaAs substrates. This agreement suggests that GaAs/Si has the same defect introduction rate with radiation as GaAs/GaAs. The degradation of GaAs solar cells on Si with electron irradiation is less than that of GaAs solar cells on GaAs, because in the present, GaAs films on Si substrates have lower minority-carrier diffusion length compared to GaAs films on GaAs and these films are insensitive to radiation. The p/sup +/-p/sup +/-n AlGaAs-GaAs heteroface solar cell with junction depth of about 0.3 ..mu..m is concluded to be useful for a high-efficiency and radiation-resistant solar cell fabricated on a Si substrate.

  5. Laser Gain and Threshold Properties in Compressive-Strained and Lattice-Matched GaInNAs/GaAs Quantum Wells

    SciTech Connect (OSTI)

    Chow, W.W.; Jones, E.D.; Modine, N.A.; Allerman, A.A.; Kurtz, S.R.

    1999-08-04

    The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GAInNAs/GaAs laser structures.

  6. Radiation resistance of GaAs-GaAlAs vertical cavity surface emitting lasers

    SciTech Connect (OSTI)

    Jabbour, J.; Zazoui, M.; Sun, G.C.; Bourgoin, J.C.; Gilard, O.

    2005-02-15

    The variations of the optical and electrical characteristics of a vertical cavity surface emitting laser based on GaAs quantum wells have been monitored versus irradiation with 1 MeV electrons. The results are understood by the introduction of nonradiative recombination centers in the wells whose characteristics, capture cross section for minority carriers times their introduction rate, can be determined. A similar study performed for proton irradiation shows that the results can be explained in the same way when the introduction rate of the defects is replaced by the proton energy loss into atomic collisions. These results allow us to deduce the equivalence between electron and proton irradiations: A flux of 1 proton cm{sup -2} which loses an energy E{sub nl} (eV) into atomic collisions is equivalent to a fluence of about 9x10{sup -2} E{sub nl} cm{sup -2}, 1 MeV electrons.

  7. Vertical zone melt growth of GaAs

    SciTech Connect (OSTI)

    Henry, R.L.; Nordquist, P.E.R.; Gorman, R.J.

    1993-12-31

    A Vertical Zone Melt (VZM) technique has been applied to the single crystal growth of GaAs. A pyrolytic boron nitride crucible and a (100) oriented seed were used along with liquid encapsulation by boric oxide. In the case of GaAs, the ampoule was pressurized with either argon or argensic vapor from elemental arsenic at pressures ranging from 1 to 2 atmospheres. A molten zone length of 22 mm gave a growth interface which is nearly flat and resulted in routine single crystal growth. Temperature gradients of 4{degrees}C/cm. and 9{degrees}C/cm. have produced dislocation densities of <1000/cm{sup 2} and 2000-5000/cm{sup 2} respectively for 34 mm diameter crystals of GaAs. Post growth cooling rates for GaAs have been 35, 160 and 500{degrees}C/hr. The cooling rate has been found to affect the number and size of arsenic precipitates and the EL2 concentration in the GaAs crystal. The effects of these and other growth parameters on the crystalline perfection and electrical properties of the crystals will be discussed.

  8. Structural transformations in amorphous ↔ crystalline phase change of Ga-Sb alloys

    SciTech Connect (OSTI)

    Edwards, T. G.; Sen, S.; Hung, I.; Gan, Z.; Kalkan, B.; Raoux, S.

    2013-12-21

    Ga-Sb alloys with compositions ranging between ∼12 and 50 at. % Ga are promising materials for phase change random access memory applications. The short-range structures of two such alloys with compositions Ga{sub 14}Sb{sub 86} and Ga{sub 46}Sb{sub 54} are investigated, in their amorphous and crystalline states, using {sup 71}Ga and {sup 121}Sb nuclear magnetic resonance spectroscopy and synchrotron x-ray diffraction. The Ga and Sb atoms are fourfold coordinated in the as-deposited amorphous Ga{sub 46}Sb{sub 54} with nearly 40% of the constituent atoms being involved in Ga-Ga and Sb-Sb homopolar bonding. This necessitates extensive bond switching and elimination of homopolar bonds during crystallization. On the other hand, Ga and Sb atoms are all threefold coordinated in the as-deposited amorphous Ga{sub 14}Sb{sub 86}. Crystallization of this material involves phase separation of GaSb domains in Sb matrix and a concomitant increase in the Ga coordination number from 3 to 4. Results from crystallization kinetics experiments suggest that the melt-quenching results in the elimination of structural “defects” such as the homopolar bonds and threefold coordinated Ga atoms in the amorphous phases of these alloys, thereby rendering them structurally more similar to the corresponding crystalline states compared to the as-deposited amorphous phases.

  9. Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

    SciTech Connect (OSTI)

    Schmidt, Gordon Mller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jrgen; Glauser, Marlene; Carlin, Jean-Franois; Cosendey, Gatien; Butt, Raphal; Grandjean, Nicolas

    2014-07-21

    Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

  10. Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240350?nm emission

    SciTech Connect (OSTI)

    Himwas, C.; Hertog, M. den; Dang, Le Si; Songmuang, R.; Monroy, E.

    2014-12-15

    We present structural and optical studies of AlGaN sections and AlGaN/AlN nanodisks (NDs) in nanowires grown by plasma-assisted molecular beam epitaxy. The Al-Ga intermixing at Al(Ga)N/GaN interfaces and the chemical inhomogeneity in AlGaN NDs evidenced by scanning transmission electron microscopy are attributed to the strain relaxation process. This interpretation is supported by the three-dimensional strain distribution calculated by minimizing the elastic energy in the structure. The alloy inhomogeneity increases with the Al content, leading to enhanced carrier localization signatures in the luminescence characteristics, i.e., red shift of the emission, s-shaped temperature dependence, and linewidth broadening. Despite these effects, the emission energy of AlGaN/AlN NDs can be tuned in the 240350?nm range with internal quantum efficiencies around 30%.

  11. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect (OSTI)

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  12. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect (OSTI)

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  13. Simple intrinsic defects in GaAs : numerical supplement.

    SciTech Connect (OSTI)

    Schultz, Peter Andrew

    2012-04-01

    This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

  14. Electronic contribution to friction on GaAs

    SciTech Connect (OSTI)

    Applied Science and Technology Graduate Group, UC Berkeley; Dept. of Materials Sciences and Engineering, UC Berkeley; Salmeron, Miquel; Qi, Yabing; Park, J.Y.; Hendriksen, B.L.M.; Ogletree, D.F.; Salmeron, Miquel

    2008-04-15

    The electronic contribution to friction at semiconductor surfaces was investigated by using a Pt-coated tip with 50nm radius in an atomic force microscope sliding against an n-type GaAs(100) substrate. The GaAs surface was covered by an approximately 1 nm thick oxide layer. Charge accumulation or depletion was induced by the application of forward or reverse bias voltages. We observed a substantial increase in friction force in accumulation (forward bias) with respect to depletion (reverse bias). We propose a model based on the force exerted by the trapped charges that quantitatively explains the experimental observations of excess friction.

  15. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-01

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

  16. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D. J.; Kurtz, Sarah R.; Kibbler, A. E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-15

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.

  17. High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

    SciTech Connect (OSTI)

    Young, N. G. Farrell, R. M.; Iza, M.; Speck, J. S.; Perl, E. E.; Keller, S.; Bowers, J. E.; Nakamura, S.; DenBaars, S. P.

    2014-04-21

    We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

  18. Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Edmunds, C.; Malis, O.; Shao, J.; Shirazi-HD, M.; Manfra, M. J.

    2014-07-14

    We demonstrate THz intersubband absorption (15.6–26.1 meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14 meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a ∼40% reduction in the linewidth (from roughly 8 to 5 meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

  19. Inversion-mode GaAs wave-shaped field-effect transistor on GaAs (100) substrate

    SciTech Connect (OSTI)

    Zhang, Jingyun; Si, Mengwei; Wu, Heng; Ye, Peide D.; Lou, Xiabing; Gordon, Roy G.; Shao, Jiayi; Manfra, Michael J.

    2015-02-16

    Inversion-mode GaAs wave-shaped metal-oxide-semiconductor field-effect transistors (WaveFETs) are demonstrated using atomic-layer epitaxy of La{sub 2}O{sub 3} as gate dielectric on (111)A nano-facets formed on a GaAs (100) substrate. The wave-shaped nano-facets, which are desirable for the device on-state and off-state performance, are realized by lithographic patterning and anisotropic wet etching with optimized geometry. A well-behaved 1 μm gate length GaAs WaveFET shows a maximum drain current of 64 mA/mm, a subthreshold swing of 135 mV/dec, and an I{sub ON}/I{sub OFF} ratio of greater than 10{sup 7}.

  20. Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

    SciTech Connect (OSTI)

    Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko; Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel; Garcia, Alipio

    2009-06-08

    We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

  1. Fabrication and Characterization of a Single Hole Transistor in p-type GaAs/AlGaAs Heterostructures

    SciTech Connect (OSTI)

    Tracy, Lisa A; Reno, John L.; Hargett, Terry W.

    2015-09-01

    Most spin qubit research to date has focused on manipulating single electron spins in quantum dots. However, hole spins are predicted to have some advantages over electron spins, such as reduced coupling to host semiconductor nuclear spins and the ability to control hole spins electrically using the large spin-orbit interaction. Building on recent advances in fabricating high-mobility 2D hole systems in GaAs/AlGaAs heterostructures at Sandia, we fabricate and characterize single hole transistors in GaAs. We demonstrate p-type double quantum dot devices with few-hole occupation, which could be used to study the physics of individual hole spins and control over coupling between hole spins, looking towards eventual applications in quantum computing. Intentionally left blank

  2. Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets

    SciTech Connect (OSTI)

    Chu, Kuei-Yi; Chiang, Meng-Hsueh Cheng, Shiou-Ying; Liu, Wen-Chau

    2012-02-15

    Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

  3. Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

    SciTech Connect (OSTI)

    Hu, J. Groeseneken, G.; Stoffels, S.; Lenci, S.; Venegas, R.; Decoutere, S.; Bakeroot, B.

    2015-02-23

    This paper presents a combined technique of high voltage off-state stress and current transient measurements to investigate the trapping/de-trapping characteristics of Au-free AlGaN/GaN Schottky barrier diodes. The device features a symmetric three-terminal structure with a central anode contact surrounded by two separate cathodes. Under the diode off-state stress conditions, the two separate cathodes were electrically shorted. The de-trapping dynamics was studied by monitoring the recovery of the two-dimensional electron gas (2DEG) current at different temperatures by applying 0.5?V at cathode 2 while grounding cathode 1. During the recovery, the anode contact acts as a sensor of changes in diode leakage current. This leakage variation was found to be mainly due to the barrier height variation. With this method, the energy level and capture cross section of different traps in the AlGaN/GaN Schottky barrier diode can be extracted. Furthermore, the physical location of different trapping phenomena is indicated by studying the variation of the diode leakage current during the recovery. We have identified two distinct trapping mechanisms: (i) electron trapping at the AlGaN surface in the vicinity of the Schottky contact which results in the leakage reduction (barrier height ?{sub B} increase) together with R{sub ON} degradation; (ii) the electron trapping in the GaN channel layer which partially depletes the 2DEG. The physical origin of the two different traps is discussed in the text.

  4. Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice

    SciTech Connect (OSTI)

    Sobolev, M. M. Buyalo, M. S.; Nevedomskiy, V. N.; Zadiranov, Yu. M.; Zolotareva, R. V.; Vasil’ev, A. P.; Ustinov, V. M.; Portnoi, E. L.

    2015-10-15

    The spectral characteristics of a laser with an active region based on a ten-layer system of In(Ga)As/GaAs vertically correlated quantum dots with 4.5-nm GaAs spacer layers between InAs quantum dots are studied under the conditions of spontaneous and stimulated emission, depending on the current and the duration of pump pulses. Data obtained by transmission electron microscopy and electroluminescence and absorption polarization anisotropy measurements make it possible to demonstrate that the investigated system of tunnel-coupled InAs quantum dots separated by thin GaAs barriers represents a quantum-dot superlattice. With an increase in the laser pump current, the electroluminescence intensity increases linearly and the spectral position of the electroluminescence maximum shifts to higher energies, which is caused by the dependence of the miniband density-of-states distribution on the pump current. Upon exceeding the threshold current, multimode lasing via the miniband ground state is observed. One of the lasing modes can be attributed to the zero-phonon line, and the other is determined by the longitudinal-optical phonon replica of quantum-dot emission. The results obtained give evidence that, under conditions of the laser pumping of an In(Ga)As/GaAs quantum-dot superlattice, strong coupling between the discrete electron states in the miniband and optical phonons takes place. This leads to the formation of quantum-dot polarons, resulting from the resonant mixing of electronic states whose energy separation is comparable to the optical-phonon energy.

  5. InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

    SciTech Connect (OSTI)

    Alonso-lvarez, D.; Thomas, T.; Fhrer, M.; Hylton, N. P.; Ekins-Daukes, N. J.; Lackner, D.; Philipps, S. P.; Bett, A. W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.

    2014-08-25

    Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6 misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1??s, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

  6. Defect-Reduction Mechanism for Improving Radiative Efficiency in InGaN/GaN Light-Emitting Diodes using InGaN Underlayers

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Armstrong, Andrew M.; Bryant, Benjamin N.; Crawford, Mary H.; Koleske, Daniel D.; Lee, Stephen R.; Wierer, Jr., Jonathan J.

    2015-04-01

    The influence of a dilute InxGa1-xN (x~0.03) underlayer (UL) grown below a single In0.16Ga0.84N quantum well (SQW), within a light-emitting diode(LED), on the radiative efficiency and deep level defect properties was studied using differential carrier lifetime (DCL) measurements and deep level optical spectroscopy (DLOS). DCL measurements found that inclusion of the UL significantly improved LED radiative efficiency. At low current densities, the non-radiative recombination rate of the LED with an UL was found to be 3.9 times lower than theLED without an UL, while the radiative recombination rates were nearly identical. This, then, suggests that the improved radiative efficiency resultedmore » from reduced non-radiative defect concentration within the SQW. DLOS measurement found the same type of defects in the InGaN SQWs with and without ULs. However, lighted capacitance-voltage measurements of the LEDs revealed a 3.4 times reduction in a SQW-related near-mid-gap defect state for the LED with an UL. Furthermore, quantitative agreement in the reduction of both the non-radiative recombination rate (3.9×) and deep level density (3.4×) upon insertion of an UL corroborates deep level defect reduction as the mechanism for improved LED efficiency.« less

  7. Properties of H, O and C in GaN

    SciTech Connect (OSTI)

    Pearton, S.J.; Abernathy, C.R.; Lee, J.W.

    1996-04-01

    The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

  8. Geology and geothermal resources of the Santiam Pass area of the Oregon Cascade Range, Deschutes, Jefferson and Linn Counties, Oregon. Final report

    SciTech Connect (OSTI)

    Hill, B.E.

    1992-10-01

    This open-file report presents the results of the Santiam Pass drilling program. The first phase of this program was to compile all available geological, geophysical and geothermal data for the Santiam Pass area and select a drill site on the basis of these data (see Priest and others, 1987a), A summary of the drilling operations and costs associated with the project are presented in chapter 1 by Hill and Benoit. An Overview of the geology of the Santiam Pass area is presented by Hill and Priest in chapter 2. Geologic mapping and isotopic age determinations in the Santiam Pass-Mount Jefferson area completed since 1987 are summarized in chapter 2. One of the more important conclusions reached in chapter 2 is that a minimum of 2 km vertical displacement has occurred in the High Cascade graben in the Santiam Pass area. The petrology of the Santiam Pass drill core is presented by Hill in chapter 3. Most of the major volcanic units in the core have been analyzed for major, minor, and trace element abundances and have been studied petrographically. Three K-Ar ages are interpreted in conjunction with the magnetostratigraphy of the core to show that the oldest rocks in the core are approximately 1.8 Ma. Geothermal and geophysical data collected from the Santiam Pass well are presented by Blackwell in chapter 4. The Santiam Pass well failed to penetrate beneath the zone of lateral groundwater flow associated with highly permeable Quaternary volcanic rocks. Calculated geothermal gradients range from about 50{degree}C/km at depth 700-900 m, to roughly 110{degree}C/km from 900 m to the bottom of the well at 929 m. Heat-flow values for the bottom part of the hole bracket the regional average for the High Cascades. Blackwell concludes that heat flow along the High Cascades axis is equal to or higher than along the western edge of the High Cascades.

  9. Contrasting Behavior of GaP(001) and InP(001) at the Interface...

    Office of Scientific and Technical Information (OSTI)

    Contrasting Behavior of GaP(001) and InP(001) at the Interface with Water Citation Details In-Document Search Title: Contrasting Behavior of GaP(001) and InP(001) at the Interface ...

  10. Electron-limiting defect complex in hyperdoped GaAs: The D D...

    Office of Scientific and Technical Information (OSTI)

    Electron-limiting defect complex in hyperdoped GaAs: The D D X center Prev Next Title: Electron-limiting defect complex in hyperdoped GaAs: The D D X center Authors: Ma, Jie ...

  11. Coexistence of charge-density wave and ferromagnetism in Ni2MnGa...

    Office of Scientific and Technical Information (OSTI)

    Coexistence of charge-density wave and ferromagnetism in Ni2MnGa Citation Details In-Document Search Title: Coexistence of charge-density wave and ferromagnetism in Ni2MnGa ...

  12. Bismuth-induced phase control of GaAs nanowires grown by molecular...

    Office of Scientific and Technical Information (OSTI)

    Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy Citation Details In-Document Search Title: Bismuth-induced phase control of GaAs nanowires grown by ...

  13. Site-controlled fabrication of Ga nanodroplets by focused ion beam

    SciTech Connect (OSTI)

    Xu, Xingliang; Wang, Zhiming M.; Wu, Jiang; Li, Handong; Zhou, Zhihua; Wang, Xiaodong

    2014-03-31

    Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

  14. Ge doped GaN with controllable high carrier concentration for...

    Office of Scientific and Technical Information (OSTI)

    Ge doped GaN with controllable high carrier concentration for plasmonic applications Citation Details In-Document Search Title: Ge doped GaN with controllable high carrier...

  15. Reactive codoping of GaAlInP compound semiconductors (Patent...

    Office of Scientific and Technical Information (OSTI)

    This site is a product of DOE's Office of Scientific and Technical Information (OSTI) and ... A GaAlInP compound semiconductor and a method of producing a GaAlInP compound ...

  16. Quaternary InGaAsSb Thermophotovoltaic Diodes

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  17. Influence of Ga content on the structure and anomalous Hall effect of Fe{sub 1−x}Ga{sub x} thin films on GaSb(100)

    SciTech Connect (OSTI)

    Anh Tuan, Duong; Shin, Yooleemi; Viet Cuong, Tran; Cho, Sunglae; Phan, The-Long

    2014-05-07

    The Fe{sub 1−x}Ga{sub x} thin films (x = 0.4, 0.5) have been grown on GaSb(100) substrate using molecular beam epitaxy. An epitaxial film with bcc α-Fe crystal structure (A2) is observed in Fe{sub 0.6}Ga{sub 0.4} film, while an impure Fe{sub 3}Ga phase with DO{sub 3} structure is appeared in Fe{sub 0.5}Ga{sub 0.5} film. The saturated magnetizations at room temperature are observed to be 570 emu/cm{sup 3} and 180 emu/cm{sup 3} and the coercivities to be 170 and 364 Oe for Fe{sub 0.6}Ga{sub 0.4} and Fe{sub 0.5}Ga{sub 0.5}, respectively. A hysteresis trend in Hall resistance vs. magnetic field is observed for Fe{sub 0.5}Ga{sub 0.5} film. However, there is a weak hysteresis noticed in Fe{sub 0.4}Ga{sub 0.6} thin film.

  18. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA | Department

    Energy Savers [EERE]

    of Energy 6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA February 8, 2012 EIS-0476: Final Environmental Impact Statement Department of Energy Loan Guarantees for Proposed Units 3 and 4 at the Vogtle Electric Generating Plant, Burke County, GA February 25, 2014 EIS-0476: Record of Decision Department of Energy Loan Guarantees for Proposed Units 3 and 4 at the Vogtle Electric Generating Plant, Burke County, GA

  19. On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Gao, Feng; Chen, Di; Tuller, Harry L.; Thompson, Carl V.; Palacios, Toms

    2014-03-28

    Water-related redox couples in ambient air are identified as an important source of the surface trapping states, dynamic on-resistance, and drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). Through in-situ X-ray photoelectron spectroscopy (XPS), direct signature of the water-related specieshydroxyl groups (OH) was found at the AlGaN surface at room temperature. It was also found that these species, as well as the current collapse, can be thermally removed above 200?C in vacuum conditions. An electron trapping mechanism based on the H{sub 2}O/H{sub 2} and H{sub 2}O/O{sub 2} redox couples is proposed to explain the 0.5?eV energy level commonly attributed to the surface trapping states. Finally, the role of silicon nitride passivation in successfully removing current collapse in these devices is explained by blocking the water molecules away from the AlGaN surface.

  20. Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Bia?ek, M. Witowski, A. M.; Grynberg, M.; ?usakowski, J.; Orlita, M.; Potemski, M.; Czapkiewicz, M.; Umansky, V.

    2014-06-07

    In order to characterize magnetic field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the magnetoplasmon resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.

  1. High 400?C operation temperature blue spectrum concentration solar junction in GaInN/GaN

    SciTech Connect (OSTI)

    Zhao, Liang; Detchprohm, Theeradetch; Wetzel, Christian

    2014-12-15

    Transparent wide gap junctions suitable as high temperature, high flux topping cells have been achieved in GaInN/GaN by metal-organic vapor phase epitaxy. In structures of 25 quantum wells (QWs) under AM1.5G illumination, an open circuit voltage of 2.1?V is achieved. Of the photons absorbed in the limited spectral range of <450?nm, 64.2% are converted to electrons collected at the contacts under zero bias. At a fill factor of 45%, they account for a power conversion efficiency of38.6%. Under concentration, the maximum output power density per sun increases from 0.49?mW/cm{sup 2} to 0.51?mW/cm{sup 2} at 40?suns and then falls 0.42?mW/cm{sup 2} at 150?suns. Under external heating, a maximum of 0.59?mW/cm{sup 2} is reached at 250?C. Even at 400?C, the device is fully operational and exceeds room temperature performance. A defect analysis suggests that significantly higher fill factors and extension into longer wavelength ranges are possible with further development. The results prove GaInN/GaN QW solar junctions a viable and rugged topping cell for concentrator photovoltaics with minimal cooling requirements. By capturing the short range spectrum, they reduce the thermal load to any conventional cells stacked behind.

  2. Evaluation of the reliability of a conventional platform installed in South Pass Block 47 of the Mississippi River delta

    SciTech Connect (OSTI)

    Bea, R.G.

    1996-12-31

    In August 1995, the Energy Development Corporation (EDC) installed a conventional drilling and production platform in South Pass Block 47 (SP 47). Due to its proximity to the delta of the Mississippi River, this platform will be subject to the environmental forces developed by hurricanes and movements of the sea floor. This paper summarizes results from probability based study of the reliability characteristics of a conventional platform installed in SP 47. Bases for evaluation of the acceptability of the reliability of the platform are developed. This paper shows how reliability methods can be used to help improve the efficiency of offshore platforms. Application of traditional engineering approaches indicated the need for a mudslide resistant platform. Given that a mudslide resistant platform was required, then the gas reserves could not have been developed.

  3. Electrically active Er doping in InAs, In{sub 0.53}Ga{sub 0.47}As, and GaAs

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Electrically active Er doping in InAs, In{sub 0.53}Ga{sub 0.47}As, and GaAs Citation Details In-Document Search Title: Electrically active Er doping in InAs, In{sub 0.53}Ga{sub 0.47}As, and GaAs The electron concentration in dilute alloys of Er in GaAs, In{sub 0.53}Ga{sub 0.47}As, and InAs grown by molecular beam epitaxy is studied as a function of Er concentration and In content. Using first-principles calculations based on hybrid density functional

  4. Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    SciTech Connect (OSTI)

    Cheng, Junjie; Li, Jiadong; Miao, Bin; Wu, Dongmin; Wang, Jine; Pei, Renjun; Wu, Zhengyan

    2014-08-25

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup ?14} to 10{sup ?8} M and a detection limit below 10{sup ?14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

  5. GaN Initiative for Grid Applications (GIGA)

    SciTech Connect (OSTI)

    Turner, George

    2015-07-03

    For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 μm, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and vertical devices were explored, with the conclusion that lateral devices are superior for fundamental thermal reasons, as well as for the demonstration of future generations of monolithic power circuits. As part of the materials and device investigations breakdown mechanisms in GaN-on-Si structures were fully characterized and effective electric field engineering was recognized as critical for achieving even higher voltage operation. Improved device contact technology was demonstrated, including the first gold-free metallizations (to enable processing in CMOS foundries) while maintaining low specific contact resistance needed for high-power operation and 5-order-of magnitude improvement in device leakage currents (essential for high power operation). In addition, initial GaN-on-Si epitaxial growth was performed on 8”/200 mm Si starting substrates.

  6. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992

    SciTech Connect (OSTI)

    Venkatasubramanian, R.

    1993-01-01

    This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The ``cycled`` organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al{sub 0.34}Ga{sub 0.66}As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  7. Electrically active Er doping in InAs, In[sub 0.53]Ga[sub 0.47]As, and GaAs

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Electrically active Er doping in InAs, In[sub 0.53]Ga[sub 0.47]As, and GaAs Citation Details In-Document Search Title: Electrically active Er doping in InAs, In[sub 0.53]Ga[sub 0.47]As, and GaAs Authors: Burke, Peter G. ; Ismer, Lars ; Lu, Hong ; Frantz, Elan ; Janotti, Anderson ; Van de Walle, Chris G. ; Bowers, John E. ; Gossard, Arthur C. Publication Date: 2012-01-01 OSTI Identifier: 1105361 DOE Contract Number: SC0001009 Resource Type: Journal Article

  8. Absorption enhancement through Fabry-Prot resonant modes in a 430?nm thick InGaAs/GaAsP multiple quantum wells solar cell

    SciTech Connect (OSTI)

    Behaghel, B.; Tamaki, R.; Watanabe, K.; Sodabanlu, H.; Vandamme, N.; Dupuis, C.; Bardou, N.; Cattoni, A.; Okada, Y.; Sugiyama, M.; Collin, S.; Guillemoles, J.-F.

    2015-02-23

    We study light management in a 430?nm-thick GaAs p-i-n single junction solar cell with 10 pairs of InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the external quantum efficiency below GaAs bandgap by a factor of four through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 10% conversion efficiency. We demonstrate numerically that this promising result can be further improved by anti-reflection layers. This study paves the way to very thin MQWs solar cells.

  9. Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

    SciTech Connect (OSTI)

    Christy, Dennis; Watanabe, Arata; Egawa, Takashi

    2014-10-15

    The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical measurements, a gradual decrease of two-dimensional electron gas (2DEG) concentration near heterointerface as the function of NL thickness is observed possibly due to the reduction in difference of piezoelectric polarization charge densities between AlGaN and GaN layers. It also indicates that the minimum tensile stress and a relatively less total dislocation density for high pressure grown NL can ensure a 20 % increment in mobility at room temperature irrespective of the interface roughness. The thickness and pressure variations in NL and the subsequent changes in growth mode of AlN contributing to the post growth residual tensile stress are investigated using X-ray diffraction and Raman scattering experiments, respectively. The post growth intrinsic residual stress in top layers of heterostructures arises from lattice mismatches, NL parameters and defect densities in GaN. Hence, efforts to reduce the intrinsic residual stress in current conducting GaN layer give an opportunity to further improve the electrical characteristics of AlGaN/GaN device structures on Si.

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