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Sample records for ga georgia power

  1. Georgia Power- Solar Buyback Program

    Broader source: Energy.gov [DOE]

    Georgia Power, the state's largest utility, has established a green power program, that allows the company to purchase limited solar generation at a premium price based on other customers volunta...

  2. Georgia Power- Advanced Solar Initiative

    Broader source: Energy.gov [DOE]

    Note: According to Georgia Power's website, the Advanced Solar Initiative's final program guidelines are due to be published on June 25th and the bidding period for is expected to open on July 10,...

  3. Georgia Nuclear Profile - Power Plants

    U.S. Energy Information Administration (EIA) Indexed Site

    nuclear power plants, summer capacity and net generation, 2010" "Plant name/total reactors","Summer capacity (mw)","Net generation (thousand mwh)","Share of State nuclear net generation (percent)","Owner" "Edwin I Hatch Unit 1, Unit 2","1,759","13,902",41.5,"Georgia Power Co" "Vogtle Unit 1, Unit 2","2,302","19,610",58.5,"Georgia Power Co" "2 Plants 4

  4. Georgia Power- Small Commercial Energy Efficiency Program

    Broader source: Energy.gov [DOE]

    Georgia Power offers Small Commercial rebates to customers on qualifying rates. See program web site for additional details including eligibility information.

  5. Georgia Power- Energy Efficiency Home Improvement Rebates

    Broader source: Energy.gov [DOE]

    Georgia Power offers up to $2,575 in rebates to customers who choose to improve home performance with whole building BPI certified efficiency measures or up to $700 for individual improvements from...

  6. Georgia Power | Open Energy Information

    Open Energy Info (EERE)

    An investor-owned utility that serves 2.25m customers in 155 counties of Georgia, USA. Coordinates: 33.748315, -84.391109 Show Map Loading map... "minzoom":false,"mappi...

  7. Georgia Nuclear Profile - Power Plants

    U.S. Energy Information Administration (EIA) Indexed Site

    nuclear power plants, summer capacity and net generation, 2010" "Plant nametotal reactors","Summer capacity (mw)","Net generation (thousand mwh)","Share of State nuclear net ...

  8. ,"Georgia Natural Gas Price Sold to Electric Power Consumers...

    U.S. Energy Information Administration (EIA) Indexed Site

    ,,"(202) 586-8800",,,"1292016 12:16:48 AM" "Back to Contents","Data 1: Georgia Natural Gas Price Sold to Electric Power Consumers (Dollars per Thousand Cubic Feet)"...

  9. 6,"Edwin I Hatch","Nuclear","Georgia Power Co",1759 7,"Thomas...

    U.S. Energy Information Administration (EIA) Indexed Site

    Power Co",1793 6,"Edwin I Hatch","Nuclear","Georgia Power Co",1759 7,"Thomas A Smith Energy Facility","Natural gas","Oglethorpe Power Corporation",1290 ...

  10. Georgia Renewable Electric Power Industry Statistics

    Annual Energy Outlook [U.S. Energy Information Administration (EIA)]

    Form EIA-923, "Power Plant Operations Report." ... Fossil 28,238 28,096 28,078 28,103 28,087 Coal 13,438 13,275 ... Natural Gas includes single-fired and dual-fired plants ...

  11. Georgia Renewable Electric Power Industry Net Summer Capacity...

    U.S. Energy Information Administration (EIA) Indexed Site

    Georgia" "Energy Source",2006,2007,2008,2009,2010 "Geothermal","-","-","-","-","-" "Hydro Conventional",2027,2032,2041,2046,2052 "Solar","-","-","-","-","-" "Wind","-","-","-","-",...

  12. Georgia Renewable Electric Power Industry Net Generation, by...

    U.S. Energy Information Administration (EIA) Indexed Site

    Georgia" "Energy Source",2006,2007,2008,2009,2010 "Geothermal","-","-","-","-","-" "Hydro Conventional",2569,2236,2145,3260,3322 "Solar","-","-","-","-","-" "Wind","-","-","-","-",...

  13. Georgia - Compare - U.S. Energy Information Administration (EIA)

    U.S. Energy Information Administration (EIA) Indexed Site

    Georgia Georgia

  14. Georgia - Rankings - U.S. Energy Information Administration (EIA)

    U.S. Energy Information Administration (EIA) Indexed Site

    Georgia Georgia

  15. Georgia - Search - U.S. Energy Information Administration (EIA)

    U.S. Energy Information Administration (EIA) Indexed Site

    Georgia Georgia

  16. Georgia Total Electric Power Industry Net Generation, by Energy...

    U.S. Energy Information Administration (EIA) Indexed Site

    Georgia" "Energy Source",2006,2007,2008,2009,2010 "Fossil",100299,107165,99661,90634,97823 " Coal",86504,90298,85491,69478,73298 " Petroleum",834,788,742,650,641 " Natural ...

  17. Georgia Total Electric Power Industry Net Summer Capacity, by...

    U.S. Energy Information Administration (EIA) Indexed Site

    Georgia" "Energy Source",2006,2007,2008,2009,2010 "Fossil",28238,28096,28078,28103,28087 " Coal",13438,13275,13256,13211,13230 " Petroleum",2182,2169,2187,2188,2189 " Natural ...

  18. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Mreke, Janina Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  19. Chiyoda Thoroughbred CT-121 clean coal project at Georgia Power`s Plant Yates

    SciTech Connect (OSTI)

    Burford, D.P.

    1997-12-31

    The Chiyoda Thoroughbred CT-121 flue gas desulfurization (FGD) process at Georgia Power`s Plant Yates completed a two year demonstration of its capabilities in late 1994 under both high- and low-particulate loading conditions. This $43 million demonstration was co-funded by Southern Company, the Electric Power Research Institute and the DOE under the auspices of the US Department of Energy`s Round II Innovative Clean Coal Technology (ICCT) program. The focus of the Yates Project was to demonstrate several cost-saving modifications to Chiyoda`s already efficient CT-121 process. These modifications included: the extensive use of fiberglass reinforced plastics (FRP) in the construction of the scrubber vessel and other associated vessels, the elimination of flue gas reheat through the use of an FRP wet chimney, and reliable operation without a spare absorber module. This paper focuses on the testing results from the last trimester of the second phase of testing (high-ash loading). Specifically, operation under elevated ash loading conditions, the effects of low- and high-sulfur coal, air toxics verification testing results and unexpected improvements in byproduct gypsum quality are discussed.

  20. SBOT GEORGIA SOUTHEASTERN POWER ADMIN POC Ann Craft Telephone

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    236220 Water and Sewer Line and Related Structures Construction 237110 Power and Communication Line and Related Structures Construction 237130 Other Heavy and Civil Engineering ...

  1. Georgia Green Power Electric Member Cooperative EMC | Open Energy...

    Open Energy Info (EERE)

    Sector: Hydro Product: A partnership of Georgian electricity cooperatives, which produces power by low-impact hydro projects and landfill gas-to-electricity projects and sells it...

  2. Georgia Interfaith Power and Light- Energy Improvement Grants

    Broader source: Energy.gov [DOE]

    Applications are due by either May 15 or November 15 of each year, and materials are available on the program web site. Applicants must first have an energy audit through GIPL's Power Wise program.

  3. Energy Secretary to Visit Georgia Nuclear Reactor Site and Tennessee...

    Energy Savers [EERE]

    Chu will visit the Vogtle nuclear power plant in Waynesboro, Georgia, and Oak Ridge ... Secretary Chu traveled to Waynesboro, Georgia, to visit the Vogtle nuclear power plant, ...

  4. Dalton, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Georgia: Energy Resources (Redirected from Dalton, GA) Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.7698021, -84.9702228 Show Map Loading map......

  5. Workplace Charging Challenge Partner: Georgia Institute of Technology...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Joined the Challenge: February 2014 Headquarters: Atlanta, GA Charging Location: Atlanta, GA Domestic Employees: 6,490 Georgia Institute of Technology is a leader in innovation and ...

  6. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  7. Wind Powering America: A New Wind Economy for South Carolina and Georgia Final Report

    SciTech Connect (OSTI)

    SC Energy Office: Southern Alliance for Clean Energy

    2013-02-12

    This report describes all activities undertaken by the Southern Alliance for Clean Energy (SACE) in cooperation with the states of Georgia and South Carolina to develop a public outreach program, including shared analytical and reference tools and other technical assistance.

  8. ,"Georgia Natural Gas Price Sold to Electric Power Consumers (Dollars per Thousand Cubic Feet)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Price Sold to Electric Power Consumers (Dollars per Thousand Cubic Feet)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Price Sold to Electric Power Consumers (Dollars per Thousand Cubic Feet)",1,"Monthly","6/2016" ,"Release Date:","8/31/2016" ,"Next Release

  9. Categorical Exclusion Determinations: Georgia | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Georgia Categorical Exclusion Determinations: Georgia Location Categorical Exclusion Determinations issued for actions in Georgia. DOCUMENTS AVAILABLE FOR DOWNLOAD May 2, 2016 CX-100596 Categorical Exclusion Determination Energy Savings Performance Contract (ESPC) at Marine Corps Logistics Base Albany (MCLBA), GA - Biomass Steam Turbine Generator Award Number: DE-EE0007461 CX(s) Applied: A9 Federal Energy Management Program Date: 04/13/2016 Location(s): GA Office(s): Golden Field Office March 4,

  10. Economic Benefits, Carbon Dioxide (CO2) Emissions Reduction, and Water Conservation Benefits from 1,000 Megawatts (MW) of New Wind Power in Georgia (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2008-06-01

    The U.S. Department of Energy's Wind Powering America Program is committed to educating state-level policy makers and other stakeholders about the economic, CO2 emissions, and water conservation impacts of wind power. This analysis highlights the expected impacts of 1000 MW of wind power in Georgia. We forecast the cumulative economic benefits from 1000 MW of development in Georgia to be $2.1 billion, annual CO2 reductions are estimated at 3.0 million tons, and annual water savings are 1,628 million gallons.

  11. ,"Georgia Natural Gas Industrial Price (Dollars per Thousand...

    U.S. Energy Information Administration (EIA) Indexed Site

    586-8800",,,"1292016 12:15:32 AM" "Back to Contents","Data 1: Georgia Natural Gas Industrial Price (Dollars per Thousand Cubic Feet)" "Sourcekey","N3035GA3" "Date","Georgia...

  12. In Savannah, Georgia, Even the Data is Green | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    In Savannah, Georgia, Even the Data is Green In Savannah, Georgia, Even the Data is Green May 5, 2011 - 4:49pm Addthis The new energy efficient IT Data Center in Savannah, GA. | ...

  13. Control Center and Data Management Improvements Modernize Bulk Power Operations in Georgia

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Under the American Recovery and Reinvestment Act of 2009, the U.S. Department of Energy and the electricity industry have jointly invested over $7.9 billion in 99 cost- shared Smart Grid Investment Grant projects to modernize the electric grid, strengthen cybersecurity, improve interoperability, and collect an unprecedented level of data on smart grid and customer operations. 1. Summary Georgia System Operations Corporation's (GSOC) Smart Grid Investment Grant (SGIG) project modernized bulk

  14. Newton County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    in Newton County, Georgia Covington, Georgia Mansfield, Georgia Newborn, Georgia Oxford, Georgia Porterdale, Georgia Social Circle, Georgia Retrieved from "http:...

  15. Chatham County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Georgia Bloomingdale, Georgia Garden City, Georgia Georgetown, Georgia Isle of Hope, Georgia Montgomery, Georgia Pooler, Georgia Port Wentworth, Georgia Savannah, Georgia...

  16. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

    SciTech Connect (OSTI)

    Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing; Chen, Weixi; Ding, Ying

    2014-10-06

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ?51?nm at a center wavelength of 1060?nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

  17. GEORGIA RECOVERY ACT SNAPSHOT | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Georgia has substantial natural resources, including biomass and hydroelectric power .The American Recovery & Reinvestment Act (ARRA) is making a meaningful down payment on the ...

  18. Liberty County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    A. Places in Liberty County, Georgia Allenhurst, Georgia Flemington, Georgia Fort Stewart, Georgia Gumbranch, Georgia Hinesville, Georgia Midway, Georgia Riceboro, Georgia...

  19. Double Power Output for GaAs Solar Cells Embedded in Luminescent...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Double power output of bifacial thin-film GaAs microscale solar cells is achieved by embedding in luminescent waveguides (LSCs) with light- trapping backside reflectors (BSRs). ...

  20. EECBG Success Story: In Savannah, Georgia, Even the Data is Green...

    Broader source: Energy.gov (indexed) [DOE]

    The new energy efficient IT Data Center in Savannah, Georgia. | Courtesy of the City of Savannah, GA. The new energy efficient IT Data Center in Savannah, Georgia. | Courtesy of ...

  1. Cherokee County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Ball Ground, Georgia Canton, Georgia Holly Springs, Georgia Mountain Park, Georgia Nelson, Georgia Waleska, Georgia Woodstock, Georgia Retrieved from "http:en.openei.orgw...

  2. Madison County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 3 Climate Zone Subtype A. Places in Madison County, Georgia Carlton, Georgia Colbert, Georgia Comer, Georgia Danielsville, Georgia Hull, Georgia Ila, Georgia Royston,...

  3. Walton County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 3 Climate Zone Subtype A. Places in Walton County, Georgia Between, Georgia Good Hope, Georgia Jersey, Georgia Loganville, Georgia Monroe, Georgia Social Circle, Georgia...

  4. Rabun County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Places in Rabun County, Georgia Clayton, Georgia Dillard, Georgia Mountain City, Georgia Sky Valley, Georgia Tallulah Falls, Georgia Tiger, Georgia Retrieved from "http:...

  5. Gwinnett County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    BJ Gas Recovery Biomass Facility Places in Gwinnett County, Georgia Auburn, Georgia Berkeley Lake, Georgia Braselton, Georgia Buford, Georgia Dacula, Georgia Duluth, Georgia...

  6. Georgia State Historic Preservation Programmatic Agreement | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Georgia State Historic Preservation Programmatic Agreement Georgia State Historic Preservation Programmatic Agreement Fully executed programmatic agreement between DOE, State Energy Office and State Historic Preservation Office. state_historic_preservation_programmatic_agreement_ga.pdf (1.06 MB) More Documents & Publications Arizona State Historic Preservation Programmatic Agreement Delaware State Historic Preservation Programmatic Agreement Florida State Historic Preservation

  7. AlGaAs converters and arrays for laser power beaming

    SciTech Connect (OSTI)

    Khvostikov, Vladimir Sorokina, Svetlana; Potapovich, Nataliia; Khvostikova, Olga; Shvarts, Maxim; Timoshina, Nailya; Andreev, Viacheslav

    2015-09-28

    This study reports on the development of AlGaAs/GaAs-based laser power photovoltaic (PV) converters fabricated by LPE. The monochromatic (λ = 809 nm) conversion efficiency up to 58% is measured for cells with p-n junction in Al{sub 0.07}Ga{sub 0.93}As and low (x = 0.25-0.3) Al concentration ‘window’. Modules, which have converters of low and high power laser radiation and the voltage of 4V, have been designed and fabricated. Comparison of output parameters measured at two different conditions (i.e., under flash lamp and laser beam) has been performed.

  8. City of Hampton, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    search Name: City of Hampton Place: Georgia Website: www.cityofhampton-ga.govservi Outage Hotline: 770-946-4306; after hours- 911 References: EIA Form EIA-861 Final Data...

  9. City of La Grange, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    to: navigation, search Name: City of La Grange Place: Georgia Phone Number: 706-883-2030 Website: www.lagrange-ga.orgUtilities. Outage Hotline: 706-883-2130 References: EIA...

  10. Energy Incentive Programs, Georgia | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    What load managementdemand response options are available to me? Georgia Power offers a set of real-time pricing programs. In one set of options under this service, customers are ...

  11. Georgia Recovery Act State Memo | Department of Energy

    Energy Savers [EERE]

    Georgia has substantial natural resources, including biomass and hydroelectric power. The American Recovery & Reinvestment Act (ARRA) is making a meaningful down payment on the ...

  12. Hart County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 3 Climate Zone Subtype A. Places in Hart County, Georgia Bowersville, Georgia Canon, Georgia Hartwell, Georgia Reed Creek, Georgia Royston, Georgia Retrieved from "http:...

  13. Houston County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    County, Georgia Byron, Georgia Centerville, Georgia Perry, Georgia Robins AFB, Georgia Warner Robins, Georgia Retrieved from "http:en.openei.orgwindex.php?titleHoustonCounty,...

  14. Meriwether County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 3 Climate Zone Subtype A. Places in Meriwether County, Georgia Gay, Georgia Greenville, Georgia Haralson, Georgia Lone Oak, Georgia Luthersville, Georgia...

  15. Harris County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Harris County, Georgia Hamilton, Georgia Pine Mountain, Georgia Shiloh, Georgia Waverly Hall, Georgia West Point, Georgia Retrieved from "http:en.openei.orgw...

  16. Middle Georgia Biofuels | Open Energy Information

    Open Energy Info (EERE)

    Georgia Biofuels Jump to: navigation, search Name: Middle Georgia Biofuels Place: East Dublin, Georgia Zip: 31027 Product: Georgia-based biodiesel producer. References: Middle...

  17. Performance and breakdown characteristics of irradiated vertical power GaN P-i-N diodes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    King, M. P.; Armstrong, A. M.; Dickerson, J. R.; Vizkelethy, G.; Fleming, R. M.; Campbell, J.; Wampler, W. R.; Kizilyalli, I. C.; Bour, D. P.; Aktas, O.; et al

    2015-10-29

    Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n- drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence <; 1013 cm-2. Furthermore, the unipolar figure of merit for power devices indicates that while the on-resistance and breakdown voltage degrade with irradiation, vertical GaN P-i-Ns remainmore » superior to the performance of the best available, unirradiated silicon devices and on-par with unirradiated modern SiC-based power devices.« less

  18. Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Biorefinery Groundbreaking | Department of Energy Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking October 6, 2007 - 4:21pm Addthis SOPERTON, GA - U.S. Secretary of Energy Samuel W. Bodman today attended a groundbreaking ceremony for Range Fuels' biorefinery - one of the nation's first commercial-scale cellulosic ethanol biorefineries - and made the following statement.

  19. Franklin County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 4 Climate Zone Subtype A. Places in Franklin County, Georgia Canon, Georgia Carnesville, Georgia Franklin Springs, Georgia Gumlog, Georgia Lavonia,...

  20. Appling County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Georgia Appling County Pellets Places in Appling County, Georgia Baxley, Georgia Graham, Georgia Surrency, Georgia Retrieved from "http:en.openei.orgw...

  1. Peach County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    A. Places in Peach County, Georgia Byron, Georgia Fort Valley, Georgia Perry, Georgia Warner Robins, Georgia Retrieved from "http:en.openei.orgwindex.php?titlePeachCounty,G...

  2. Columbia County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Places in Columbia County, Georgia Evans, Georgia Grovetown, Georgia Harlem, Georgia Martinez, Georgia Retrieved from "http:en.openei.orgwindex.php?titleColumbiaCounty,Geor...

  3. Oconee County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 3 Climate Zone Subtype A. Places in Oconee County, Georgia Bishop, Georgia Bogart, Georgia North High Shoals, Georgia Watkinsville, Georgia Retrieved...

  4. Terrell County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 3 Climate Zone Subtype A. Places in Terrell County, Georgia Bronwood, Georgia Dawson, Georgia Parrott, Georgia Sasser, Georgia Retrieved from "http:en.openei.orgw...

  5. Upson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 3 Climate Zone Subtype A. Places in Upson County, Georgia Hannahs Mill, Georgia Lincoln Park, Georgia Salem, Georgia Sunset Village, Georgia Thomaston,...

  6. fe0013961-GaTech | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Performer Georgia Tech Research Corporation, Atlanta GA 30332 Background While earlier research focused on the properties of the hydrate mass per se (Sloan Jr and Koh 2007), ...

  7. SOUTHEASTERN FEDERAL POWER ALLIANCE - March 11, 2014 | Department of Energy

    Office of Environmental Management (EM)

    March 11, 2014 SOUTHEASTERN FEDERAL POWER ALLIANCE - March 11, 2014 SOUTHEASTERN FEDERAL POWER ALLIANCE - March 11, 2014 Southeastern Federal Power Alliance meeting was held on March 11, 2014 at the US Army Corps of Engineers Allatoona Project located at 1138 GA Highway 20 Spur, Cartesville, Georgia. Documents Available for Download Alliance Meeting Agenda (15.23 KB) SEPA Replacement Power Purchases (38.13 KB) ACT & ACF Water Control Manual Status (650.31 KB) Major Maintenance Update -

  8. BRMF Georgia Mountain Biofuels | Open Energy Information

    Open Energy Info (EERE)

    BRMF Georgia Mountain Biofuels Jump to: navigation, search Name: BRMFGeorgia Mountain Biofuels Place: Clayton, Georgia Product: Biodiesel plant developer in Georgia. References:...

  9. Vertical GaN power diodes with a bilayer edge termination

    SciTech Connect (OSTI)

    Dickerson, Jeramy R.; Allerman, Andrew A.; Bryant, Benjamin N.; Fischer, Arthur J.; King, Michael P.; Moseley, Michael W.; Armstrong, Andrew M.; Kaplar, Robert J.; Kizilyalli, Isik C.; Aktas, Ozgur; Wierer, Jr., Jonathan J.

    2015-12-07

    Vertical GaN power diodes with a bilayer edge termination (ET) are demonstrated. The GaN p-n junction is formed on a low threading dislocation defect density (104 - 105 cm-2) GaN substrate, and has a 15-μm-thick n-type drift layer with a free carrier concentration of 5 × 1015 cm-3. The ET structure is formed by N implantation into the p+-GaN epilayer just outside the p-type contact to create compensating defects. The implant defect profile may be approximated by a bilayer structure consisting of a fully compensated layer near the surface, followed by a 90% compensated (p) layer near the n-type drift region. These devices exhibit avalanche breakdown as high as 2.6 kV at room temperature. In addition simulations show that the ET created by implantation is an effective way to laterally distribute the electric field over a large area. This increases the voltage at which impact ionization occurs and leads to the observed higher breakdown voltages.

  10. Vertical GaN power diodes with a bilayer edge termination

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dickerson, Jeramy R.; Allerman, Andrew A.; Bryant, Benjamin N.; Fischer, Arthur J.; King, Michael P.; Moseley, Michael W.; Armstrong, Andrew M.; Kaplar, Robert J.; Kizilyalli, Isik C.; Aktas, Ozgur; et al

    2015-12-07

    Vertical GaN power diodes with a bilayer edge termination (ET) are demonstrated. The GaN p-n junction is formed on a low threading dislocation defect density (104 - 105 cm-2) GaN substrate, and has a 15-μm-thick n-type drift layer with a free carrier concentration of 5 × 1015 cm-3. The ET structure is formed by N implantation into the p+-GaN epilayer just outside the p-type contact to create compensating defects. The implant defect profile may be approximated by a bilayer structure consisting of a fully compensated layer near the surface, followed by a 90% compensated (p) layer near the n-type driftmore » region. These devices exhibit avalanche breakdown as high as 2.6 kV at room temperature. In addition simulations show that the ET created by implantation is an effective way to laterally distribute the electric field over a large area. This increases the voltage at which impact ionization occurs and leads to the observed higher breakdown voltages.« less

  11. Secretary Bodman Announces Federal Risk Insurance for Nuclear Power Plants

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    & Touts Robust Economy | Department of Energy Federal Risk Insurance for Nuclear Power Plants & Touts Robust Economy Secretary Bodman Announces Federal Risk Insurance for Nuclear Power Plants & Touts Robust Economy August 4, 2006 - 8:42am Addthis ATLANTA, GA - After touring Georgia Power and speaking to its employees, U.S. Department of Energy (DOE) Secretary Samuel W. Bodman today announced completion of the final rule that establishes the process for utility companies building

  12. Effingham County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 2 Climate Zone Subtype A. Places in Effingham County, Georgia Guyton, Georgia Rincon, Georgia Springfield, Georgia Retrieved from "http:en.openei.orgw...

  13. Pickens County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 4 Climate Zone Subtype A. Places in Pickens County, Georgia Jasper, Georgia Nelson, Georgia Talking Rock, Georgia Retrieved from "http:en.openei.orgw...

  14. Glascock County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Zone Subtype A. Places in Glascock County, Georgia Edge Hill, Georgia Gibson, Georgia Mitchell, Georgia Retrieved from "http:en.openei.orgwindex.php?titleGlascockCounty,Geor...

  15. Jones County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    in Jones County, Georgia Alterra Bioenergy LLC Places in Jones County, Georgia Gray, Georgia Macon, Georgia Retrieved from "http:en.openei.orgwindex.php?titleJonesCo...

  16. Butts County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 3 Climate Zone Subtype A. Places in Butts County, Georgia Flovilla, Georgia Jackson, Georgia Jenkinsburg, Georgia Retrieved from "http:en.openei.orgw...

  17. Whitfield County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Zone Subtype A. Registered Energy Companies in Whitfield County, Georgia Wilson and Dalton Places in Whitfield County, Georgia Cohutta, Georgia Dalton, Georgia Tunnel Hill,...

  18. Wayne County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Zone Number 2 Climate Zone Subtype A. Places in Wayne County, Georgia Jesup, Georgia Odum, Georgia Screven, Georgia Retrieved from "http:en.openei.orgwindex.php?titleWayne...

  19. The design, construction, and monitoring of photovoltaic power system and solar thermal system on the Georgia Institute of Technology Aquatic Center. Volume 1

    SciTech Connect (OSTI)

    Long, R.C.

    1996-12-31

    This is a report on the feasibility study, design, and construction of a PV and solar thermal system for the Georgia Tech Aquatic Center. The topics of the report include a discussion of site selection and system selection, funding, design alternatives, PV module selection, final design, and project costs. Included are appendices describing the solar thermal system, the SAC entrance canopy PV mockup, and the PV feasibility study.

  20. 0.15 {mu}m InGaAs/AlGaAs/GaAs HEMT production process for high performance and high yield v-band power MMICs

    SciTech Connect (OSTI)

    Lai, R.; Biedenbender, M.; Lee, J.

    1995-12-31

    The authors present a unique high yield, high performance 0.15 {mu}m HEMT production process which supports fabrication of MMW power MMICs up to 70 GHz. This process has been transferred successfully from an R&D process to TRW`s GaAs production line. This paper reports the on-wafer test results of more than 1300 V-band MMIC PA circuits measured over 24 wafers. The best 2-stage V-band power MMICs have demonstrated state-of-the-art performance with 9 dB power gain, 20% PAE and 330 mW output power. An excellent RF yield of 60% was achieved with an 8 dB power gain and 250 mW output power specification.

  1. Performance and breakdown characteristics of irradiated vertical power GaN P-i-N diodes

    SciTech Connect (OSTI)

    King, M. P.; Armstrong, A. M.; Dickerson, J. R.; Vizkelethy, G.; Fleming, R. M.; Campbell, J.; Wampler, W. R.; Kizilyalli, I. C.; Bour, D. P.; Aktas, O.; Nie, H.; Disney, D.; Wierer, Jr., J.; Allerman, A. A.; Moseley, M. W.; Kaplar, R. J.

    2015-10-29

    Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n- drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence <; 1013 cm-2. Furthermore, the unipolar figure of merit for power devices indicates that while the on-resistance and breakdown voltage degrade with irradiation, vertical GaN P-i-Ns remain superior to the performance of the best available, unirradiated silicon devices and on-par with unirradiated modern SiC-based power devices.

  2. Marietta, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Act Smart Grid Projects in Marietta, Georgia Cobb Electric Membership Corporation Smart Grid Project Registered Energy Companies in Marietta, Georgia Atlanta Chemical...

  3. Georgia/Incentives | Open Energy Information

    Open Energy Info (EERE)

    Local Loan Program Yes Atlanta Gas Light - Energy Efficiency Incentive Program (Georgia) Utility Rebate Program No Biomass Sales and Use Tax Exemption (Georgia) Sales Tax...

  4. Transistors for Electric Motor Drives: High-Performance GaN HEMT Modules for Agile Power Electronics

    SciTech Connect (OSTI)

    2010-09-01

    ADEPT Project: Transphorm is developing transistors with gallium nitride (GaN) semiconductors that could be used to make cost-effective, high-performance power converters for a variety of applications, including electric motor drives which transmit power to a motor. A transistor acts like a switch, controlling the electrical energy that flows around an electrical circuit. Most transistors today use low-cost silicon semiconductors to conduct electrical energy, but silicon transistors don’t operate efficiently at high speeds and voltage levels. Transphorm is using GaN as a semiconductor material in its transistors because GaN performs better at higher voltages and frequencies, and it is more energy efficient than straight silicon. However, Transphorm is using inexpensive silicon as a base to help keep costs low. The company is also packaging its transistors with other electrical components that can operate quickly and efficiently at high power levels—increasing the overall efficiency of both the transistor and the entire motor drive.

  5. Marion County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 3 Climate Zone Subtype A. Places in Marion County, Georgia Buena Vista, Georgia Retrieved from "http:en.openei.orgwindex.php?titleMarionCounty,Georgia...

  6. Sumter County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 3 Climate Zone Subtype A. Registered Energy Companies in Sumter County, Georgia Habitat for Humanity Places in Sumter County, Georgia Americus, Georgia Andersonville,...

  7. Bryan County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 2 Climate Zone Subtype A. Places in Bryan County, Georgia Pembroke, Georgia Richmond Hill, Georgia Retrieved from "http:en.openei.orgwindex.php?titleBryanCounty,Ge...

  8. Towns County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 4 Climate Zone Subtype A. Places in Towns County, Georgia Hiawassee, Georgia Young Harris, Georgia Retrieved from "http:en.openei.orgwindex.php?titleTownsCounty,G...

  9. Georgia's 8th congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    Georgia. Registered Energy Companies in Georgia's 8th congressional district Alterra Bioenergy Alterra Bioenergy LLC Biomass Energy Services Inc Middle Georgia Biofuels Retrieved...

  10. Georgia Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    state, county, city, or district. For more information, please visit the Middle School Coach page. Georgia Region Middle School Regional Georgia Georgia Regional Middle School...

  11. Georgia Shore Assistance Act

    SciTech Connect (OSTI)

    Pendergrast, C.

    1984-01-01

    The Georgia General Assembly passed the Shore Assistance Act in 1979 in order to fill a regulatory gap in the state's management of its coastal resources. A review of its legislative history, purposes, applications, and effects in terms of the sand sharing system of sand dunes, beaches, sandbars, and shoals concludes that the Act is poorly drafted. In its application on the oceanfront, it betrays its intent and protects the oceanfront owner. It has failed to satisfy the requirements of the public trust in the tidal foreshore. Amendments to clarify its understanding of the functions and values of the sand-sharing system should also conform with the state's duties under the public trust. 139 references.

  12. Efficient Switches for Solar Power Conversion: Four Quadrant GaN Switch Enabled Three Phase Grid-Tied Microinverters

    SciTech Connect (OSTI)

    2012-02-13

    Solar ADEPT Project: Transphorm is developing power switches for new types of inverters that improve the efficiency and reliability of converting energy from solar panels into useable electricity for the grid. Transistors act as fast switches and control the electrical energy that flows in an electrical circuit. Turning a transistor off opens the circuit and stops the flow of electrical current; turning it on closes the circuit and allows electrical current to flow. In this way a transistor can be used to convert DC from a solar panel into AC for use in a home. Transphorm’s transistors will enable a single semiconductor device to switch electrical currents at high-voltage in both directions—making the inverter more compact and reliable. Transphorm is using Gallium Nitride (GaN) as a semiconductor material in its transistors instead of silicon, which is used in most conventional transistors, because GaN transistors have lower losses at higher voltages and switching frequencies.

  13. Sandia, Georgia Institute of Technology Form Academic Collaboration

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Georgia Institute of Technology Form Academic Collaboration - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Energy Defense

  14. PowerPoint Presentation

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Electrical and Computer Engineering, Georgia Tech - National Acad. of Engineers, IEEE Fellow, past President IEEE Power Electronics Society, & recipient IEEE William E Newell Field ...

  15. High-power blue laser diodes with indium tin oxide cladding on semipolar (202{sup }1{sup }) GaN substrates

    SciTech Connect (OSTI)

    Pourhashemi, A. Farrell, R. M.; Cohen, D. A.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

    2015-03-16

    We demonstrate a high power blue laser diode (LD) using indium tin oxide as a cladding layer on semipolar oriented GaN. These devices show peak output powers and external quantum efficiencies comparable to state-of-the-art commercial c-plane devices. Ridge waveguide LDs were fabricated on (202{sup }1{sup }) oriented GaN substrates using InGaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 451?nm at room temperature, an output power of 2.52?W and an external quantum efficiency of 39% were measured from a single facet under a pulsed injection current of 2.34?A. The measured differential quantum efficiency was 50%.

  16. Camilla, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Map This article is a stub. You can help OpenEI by expanding it. Camilla is a city in Mitchell County, Georgia. It falls under Georgia's 2nd congressional district.12...

  17. Adrian, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    is a stub. You can help OpenEI by expanding it. Adrian is a city in Emanuel County and Johnson County, Georgia. It falls under Georgia's 12th congressional district.12...

  18. Alamo, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Map This article is a stub. You can help OpenEI by expanding it. Alamo is a town in Wheeler County, Georgia. It falls under Georgia's 1st congressional district.12...

  19. Chatsworth, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    This article is a stub. You can help OpenEI by expanding it. Chatsworth is a city in Murray County, Georgia. It falls under Georgia's 9th congressional district.12 Registered...

  20. Rome, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Rome is a city in Floyd County, Georgia. It falls under Georgia's 11st congressional district.12...

  1. Ailey, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Map This article is a stub. You can help OpenEI by expanding it. Ailey is a city in Montgomery County, Georgia. It falls under Georgia's 12th congressional district.12...

  2. Georgia Transmission Corp | Open Energy Information

    Open Energy Info (EERE)

    Corp Jump to: navigation, search Name: Georgia Transmission Corp Place: Georgia References: EIA Form EIA-861 Final Data File for 2010 - File1a1 EIA Form 861 Data Utility Id 7197...

  3. Georgia Nonprofit Helps Homeowners Save Energy

    Broader source: Energy.gov [DOE]

    Residents in Georgia are living in more comfortable and energy-efficient homes because of this Savannah based weatherization program.

  4. Highly c-axis oriented GaN films grown on free-standing diamond substrates for high-power devices

    SciTech Connect (OSTI)

    Zhang, D. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); Bian, J.M., E-mail: jmbian@dlut.edu.cn [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Qin, F.W.; Wang, J.; Pan, L. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); Zhao, J.M. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)] [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Zhao, Y.; Bai, Y.Z. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); Du, G.T. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)] [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)

    2011-10-15

    Highlights: {yields} GaN films are deposited on diamond substrates by ECR-PEMOCVD. {yields} Influence of deposition temperature on the properties of samples is investigated. {yields} Properties of GaN films are dependent on the deposition temperature. -- Abstract: GaN films with highly c-axis preferred orientation are deposited on free-standing thick diamond films by low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa and N{sub 2} are applied as precursors of Ga and N, respectively. The quality of as-grown GaN films are systematically investigated as a function of deposition temperature by means of X-ray diffraction (XRD) analysis, Hall Effect measurement (HL), room temperature photoluminescence (PL) and atomic force microscopy (AFM). The results show that the dense and uniformed GaN films with highly c-axis preferred orientation are successfully achieved on free-standing diamond substrates under optimized deposition temperature of 400 {sup o}C, and the room temperature PL spectra of the optimized GaN film show a intense ultraviolet near band edge emission and a weak yellow luminescence. The obtained GaN/diamond structure has great potential for the development of high-power semiconductor devices due to its excellent heat dissipation nature.

  5. MISS-1-N Wholesale Power Rate Schedule | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    MISS-1-N Wholesale Power Rate Schedule MISS-1-N Wholesale Power Rate Schedule Area: South Mississippi Electric Power Association System: Georgia-Alabama-South Carolina This rate ...

  6. Lighting Up Georgia Convenience Stores

    Office of Energy Efficiency and Renewable Energy (EERE)

    Thanks to help from the Energy Department, convenience stores across Georgia are saving energy by switching to energy efficient lighting. In the first year alone, participating small businesses have saved over $7,000 after the retrofits and over 54,000 KWh of energy.

  7. Feasibility Study of Economics and Performance of Solar Photovoltaics at the Tronox Facility in Savannah, Georgia. A Study Prepared in Partnership with the Environmental Protection Agency for the RE-Powering America's Land Initiative: Siting Renewable Energy on Potentially Contaminated Land and Mine Sites

    SciTech Connect (OSTI)

    Kiatreungwattana, K.; Geiger, J.; Healey, V.; Mosey, G.

    2013-03-01

    The U.S. Environmental Protection Agency (EPA), in accordance with the RE-Powering America's Land initiative, selected the Tronox Facility site in Savannah, Georgia, for a feasibility study of renewable energy production. The National Renewable Energy Laboratory (NREL) provided technical assistance for this project. The purpose of this report is to assess the site for a possible photovoltaic (PV) system installation and estimate the cost, performance, and site impacts of different PV options. In addition, the report recommends financing options that could assist in the implementation of a PV system at the site.

  8. File:USDA-CE-Production-GIFmaps-GA.pdf | Open Energy Information

    Open Energy Info (EERE)

    GA.pdf Jump to: navigation, search File File history File usage Georgia Ethanol Plant Locations Size of this preview: 776 600 pixels. Full resolution (1,650 1,275 pixels,...

  9. Magnolia BioPower LLC MBP | Open Energy Information

    Open Energy Info (EERE)

    BioPower LLC (MBP) Place: Waynesville, Georgia Zip: 31566 Product: Georgia-based wood pellet and biopower producer. 1m tpa plant is due to be completed in 2011. Coordinates:...

  10. Bacon County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    169-2006 Climate Zone Number 2 Climate Zone Subtype A. Places in Bacon County, Georgia Alma, Georgia Retrieved from "http:en.openei.orgwindex.php?titleBaconCounty,Georgia&o...

  11. McDuffie County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Number 3 Climate Zone Subtype A. Places in McDuffie County, Georgia Dearing, Georgia Thomson, Georgia Retrieved from "http:en.openei.orgwindex.php?titleMcDuffieCounty,Geor...

  12. Recovery Act State Memos Georgia

    Broader source: Energy.gov (indexed) [DOE]

    Georgia For questions about DOE's Recovery Act activities, please contact the DOE Recovery Act Clearinghouse: 1-888-DOE-RCVY (888-363-7289), Monday through Friday, 9 a.m. to 7 p.m. Eastern Time https://recoveryclearinghouse.energy.gov/contactUs.htm. All numbers and projects listed as of June 1, 2010 TABLE OF CONTENTS RECOVERY ACT SNAPSHOT................................................................................... 1 FUNDING ALLOCATION

  13. Americus, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    2nd congressional district.12 Registered Energy Companies in Americus, Georgia Habitat for Humanity References US Census Bureau Incorporated place and minor civil...

  14. ,"Georgia Natural Gas LNG Storage Withdrawals (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas LNG Storage Withdrawals (MMcf)",1,"Annual",2014 ,"Release Date:","9302015" ,"Next Release...

  15. ,"Georgia Natural Gas LNG Storage Additions (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas LNG Storage Additions (MMcf)",1,"Annual",2014 ,"Release Date:","9302015" ,"Next Release...

  16. Georgia/Wind Resources | Open Energy Information

    Open Energy Info (EERE)

    Guidebook >> Georgia Wind Resources WindTurbine-icon.png Small Wind Guidebook * Introduction * First, How Can I Make My Home More Energy Efficient? * Is Wind Energy Practical...

  17. Atlanta, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Solarity Sustainable World Capital TCE Energy Corporation Waspa Wheego Electric Cars Energy Incentives for Atlanta, Georgia City of Atlanta - Sustainable Home Initiative in...

  18. Chattahoochee Hill Country, Georgia: Energy Resources | Open...

    Open Energy Info (EERE)

    Hill Country, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.721548, -83.2599068 Show Map Loading map... "minzoom":false,"mappings...

  19. Georgia (country): Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Country Profile Name Georgia Population Unavailable GDP Unavailable Energy Consumption 0.17 Quadrillion Btu 2-letter ISO code GE 3-letter ISO code GEO Numeric ISO...

  20. City of Hogansville, Georgia (Utility Company) | Open Energy...

    Open Energy Info (EERE)

    search Name: Hogansville City of Place: Georgia Website: www.cityofhogansville.org Facebook: https:www.facebook.comhogansville.georgia Outage Hotline: 706.637.6648...

  1. Georgia Tech School of Civil and Environmental Engineering |...

    Open Energy Info (EERE)

    School of Civil and Environmental Engineering Jump to: navigation, search Name: Georgia Tech School of Civil and Environmental Engineering Abbreviation: Georgia Tech School of CEE...

  2. Georgia Tech Center for Innovative Fuel Cell and Battery Technologies...

    Open Energy Info (EERE)

    Innovative Fuel Cell and Battery Technologies Jump to: navigation, search Name: Georgia Tech Center for Innovative Fuel Cell and Battery Technologies Place: Georgia Product: The...

  3. Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia Biorefinery...

  4. Hancock County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 3 Climate Zone Subtype A. Places in Hancock County, Georgia Sparta, Georgia Retrieved from "http:en.openei.orgwindex.php?titleHancockCounty,Georgi...

  5. City of Jackson, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    Jackson, Georgia (Utility Company) Jump to: navigation, search Name: Jackson City of Place: Georgia Phone Number: 770-775-3858 Website: www.cityofjacksonga.com196El Facebook:...

  6. City of Adel, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    Georgia (Utility Company) Jump to: navigation, search Name: City of Adel Place: Georgia Phone Number: (229) 896-3601 Website: www.cityofadel.usdepartments Outage Hotline: (229)...

  7. City of Lawrenceville, Georgia (Utility Company) | Open Energy...

    Open Energy Info (EERE)

    Georgia (Utility Company) Jump to: navigation, search Name: City of Lawrenceville Place: Georgia Phone Number: 770.963.2414 Website: www.lawrencevillega.orggovern Outage Hotline:...

  8. City of Oxford, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    Oxford, Georgia (Utility Company) Jump to: navigation, search Name: Oxford City of Place: Georgia Phone Number: 770-786-7004 Website: www.oxfordgeorgia.org Outage Hotline:...

  9. Atkinson County, Georgia ASHRAE 169-2006 Climate Zone | Open...

    Open Energy Info (EERE)

    Atkinson County, Georgia ASHRAE 169-2006 Climate Zone Jump to: navigation, search County Climate Zone Place Atkinson County, Georgia ASHRAE Standard ASHRAE 169-2006 Climate Zone...

  10. Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking Secretary Bodman Touts Importance of Cellulosic Ethanol at Georgia Biorefinery Groundbreaking October ...

  11. Georgia and Arkansas Residential Energy Code Field Studies |...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Georgia and Arkansas Residential Energy Code Field Studies Georgia and Arkansas Residential Energy Code Field Studies Lead Performer: Southeast Energy Efficiency Alliance - ...

  12. Georgia Renewable Electric Power Industry Statistics

    U.S. Energy Information Administration (EIA) Indexed Site

    Primary Renewable Energy Capacity Source Hydro Conventional Primary Renewable Energy ... - - Hydro Conventional 2,052 5.6 Solar - - Wind - - WoodWood Waste 617 1.7 MSW...

  13. Georgia Renewable Electric Power Industry Statistics

    U.S. Energy Information Administration (EIA) Indexed Site

    Conventional" "Primary Renewable Energy Generation Source","Hydro Conventional" ... " Hydro Conventional",2052,5.6 " Solar","-","-" " Wind","-","-" " WoodWood ...

  14. Georgia Power - Commercial Energy Efficiency Program | Department...

    Broader source: Energy.gov (indexed) [DOE]

    or halogen: 6.50 LED lamp replacing incandescent or halogen: 9 Lighting Occupancy Sensor: 7 Lighting Daylight Sensor: 25 SplitPackaged Air Conditioners: 20-30ton Split...

  15. GE Hybrid Power Generation Systems | Open Energy Information

    Open Energy Info (EERE)

    Name: GE Hybrid Power Generation Systems Place: Georgia Zip: Atlanta Product: Focused on fuel cell stack and system development. References: GE Hybrid Power Generation Systems1...

  16. Secretary Chu's Remarks at Vogtle Nuclear Power Plant -- As Prepared...

    Energy Savers [EERE]

    Tom Fanning, President of Southern Company Paul Bowers, President and Chief Executive Officer of Georgia Power Tom Smith, Chief Executive Officer of Oglethorpe Power Bob Johnston, ...

  17. Advanced Power Electronics for LED Drivers: Advanced Technologies for integrated Power Electronics

    SciTech Connect (OSTI)

    2010-09-01

    ADEPT Project: MIT is teaming with Georgia Institute of Technology, Dartmouth College, and the University of Pennsylvania (UPenn) to create more efficient power circuits for energy-efficient light-emitting diodes (LEDs) through advances in 3 related areas. First, the team is using semiconductors made of high-performing gallium nitride grown on a low-cost silicon base (GaN-on-Si). These GaN-on-Si semiconductors conduct electricity more efficiently than traditional silicon semiconductors. Second, the team is developing new magnetic materials and structures to reduce the size and increase the efficiency of an important LED power component, the inductor. This advancement is important because magnetics are the largest and most expensive part of a circuit. Finally, the team is creating an entirely new circuit design to optimize the performance of the new semiconductors and magnetic devices it is using.

  18. Georgia Natural Gas Summary

    U.S. Energy Information Administration (EIA) Indexed Site

    Imports 4.39 4.20 2.78 3.36 4.33 1999-2014 Pipeline and Distribution Use 1967-2005 Citygate 5.93 5.19 4.35 4.66 5.19 3.82 1984-2015 Residential 15.17 15.72 16.23 14.60 14.45 15.06 1967-2015 Commercial 10.95 10.51 9.75 9.38 9.86 8.49 1967-2015 Industrial 6.25 5.90 4.61 5.38 6.07 NA 1997-2015 Vehicle Fuel 5.17 5.57 14.51 1993-2012 Electric Power 5.21 4.72 3.40 4.45 4.98 3.27 1997-2015 Imports and Exports (Million Cubic Feet) Imports 106,454 75,641 59,266 15,575 7,155 1999-2014 Underground Storage

  19. Georgia Natural Gas Summary

    U.S. Energy Information Administration (EIA) Indexed Site

    35 3.27 3.21 3.19 3.37 3.44 1989-2016 Residential 10.79 10.94 13.01 16.48 20.53 24.74 1989-2016 Commercial 6.57 7.05 7.42 7.98 8.22 8.53 1989-2016 Industrial 4.02 3.95 3.46 3.45 3.50 3.54 2001-2016 Electric Power 3.05 W 2.23 2.40 2.44 3.03 2002-2016 Consumption (Million Cubic Feet) Delivered to Consumers 79,444 67,365 56,967 52,715 53,099 57,454 2001-2016 Residential 26,193 19,976 9,664 6,532 4,675 3,799 1989-2016 Commercial 10,325 7,942 4,397 3,215 2,448 2,064 1989-2016 Industrial 14,237 13,726

  20. At Vogtle, Big Results with Nuclear Power | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    At Vogtle, Big Results with Nuclear Power At Vogtle, Big Results with Nuclear Power February 20, 2014 - 1:29pm Addthis Construction work inside the Vogtle 3 and 4 module assembly building. | Photo courtesy of Georgia Power Company. Construction work inside the Vogtle 3 and 4 module assembly building. | Photo courtesy of Georgia Power Company. A look inside the Vogtle Unite 3 containment vessel bottom head. | Photo courtesy of Georgia Power Company. A look inside the Vogtle Unite 3 containment

  1. SOUTHEASTERN FEDERAL POWER ALLIANCE- November 6, 2014

    Office of Energy Efficiency and Renewable Energy (EERE)

    Southeastern Federal Power Alliance meeting was held on November 6,2014 in the Martin Luther King, Jr. Federal Building in Atlanta, Georgia.

  2. Alternative Fuels Data Center: Georgia Transportation Data for Alternative

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Fuels and Vehicles Georgia Transportation Data for Alternative Fuels and Vehicles to someone by E-mail Share Alternative Fuels Data Center: Georgia Transportation Data for Alternative Fuels and Vehicles on Facebook Tweet about Alternative Fuels Data Center: Georgia Transportation Data for Alternative Fuels and Vehicles on Twitter Bookmark Alternative Fuels Data Center: Georgia Transportation Data for Alternative Fuels and Vehicles on Google Bookmark Alternative Fuels Data Center: Georgia

  3. SEP Success Story: Lighting Up Georgia Convenience Stores | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Lighting Up Georgia Convenience Stores SEP Success Story: Lighting Up Georgia Convenience Stores March 28, 2012 - 2:23pm Addthis One of several Georgia convenience stores that improved lighting while saving energy and money. | Courtesy of Outlaw Consulting, Inc. One of several Georgia convenience stores that improved lighting while saving energy and money. | Courtesy of Outlaw Consulting, Inc. Convenience stores across Georgia are saving energy thanks to energy efficient lighting

  4. Central Georgia EMC- Photovoltaic Rebate Program

    Broader source: Energy.gov [DOE]

    In June 2008, Central Georgia Electric Membership Corporation (CGEMC) began offering a rebate of $450 per kilowatt (kW) to residential members who install photovoltaic (PV) systems that are...

  5. Milton, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Milton is a city in Fulton County, Georgia.1 References US Census Bureau Incorporated...

  6. Fossil Energy | National Energy Technology Laboratory | Georgia...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Engineering and an adjunct professor in the College of Computing and the Ernest J. Scheller College of Business. He served as a Vice President and Director of the Georgia Tech...

  7. Clean Cities: Clean Cities-Georgia

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atlanta was designated as the first Clean Cities coalition in the nation at the Georgia Dome in 1993. Prior to being elected as the coalition's executive director, Francis served...

  8. Sakis Meliopoulos, Georgia Institute of Technology, PSERC webinar, 2/16/2016

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Protection and Control of Systems with Converter Interfaced Generation Sakis Meliopoulos Georgia Power Distinguished Professor School of Electrical and Computer Engineering Georgia Institute of Technology sakis.m@gatech.edu PSERC Public Webinar February 16, 2016 2:00-3:00 p.m. Eastern Time (11:00-12:00 p.m. Pacific) If you plan to use the phone bridge, use the NEW number: 877-820-7831 (passcode: 965722#). Description: The protection of converter interfaced generation and associated circuits and

  9. PowerPoint Presentation

    Broader source: Energy.gov (indexed) [DOE]

    Southeastern Federal Power Alliance - September 29, 2015 Proprietary and Confidential * One of the largest electric cooperatives in the U.S. - Generation only - Transmission owner is Georgia Transmission Corporation and System Operator is Georgia System Operations Corporation * Diverse portfolio of nuclear, coal, pumped storage hydro, and simple-cycle and combined-cycle gas turbines. Renewables through Green Power EMC * 2014 System Peak is 9354MW - January 7 * Revenues of approximately $1.4

  10. President Obama Announces Loan Guarantees to Construct New Nuclear Power

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Reactors in Georgia | Department of Energy Loan Guarantees to Construct New Nuclear Power Reactors in Georgia President Obama Announces Loan Guarantees to Construct New Nuclear Power Reactors in Georgia February 16, 2010 - 12:00am Addthis Washington D.C. --- Underscoring his Administration's commitment to jumpstarting the nation's nuclear power industry, President Obama today announced that the Department of Energy has offered conditional commitments for a total of $8.33 billion in loan

  11. Georgia's 2nd congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    Energy Companies in Georgia's 2nd congressional district First United Ethanol LLC Habitat for Humanity Retrieved from "http:en.openei.orgwindex.php?titleGeorgia%27s2ndc...

  12. Middle Georgia El Member Corp | Open Energy Information

    Open Energy Info (EERE)

    El Member Corp Place: Georgia Phone Number: 1-800-342-0144 Website: www.mgemc.com Facebook: https:www.facebook.comMiddleGeorgiaEMC Outage Hotline: 229-268-2671; 800-342-0144...

  13. Central Georgia El Member Corp | Open Energy Information

    Open Energy Info (EERE)

    Central Georgia El Member Corp Place: Georgia Phone Number: 770-775-7857 Website: www.cgemc.com Twitter: @CentralGAEMC Outage Hotline: 770-775-7857 References: EIA Form EIA-861...

  14. City of Commerce, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    City of Commerce, Georgia (Utility Company) Jump to: navigation, search Name: City of Commerce Place: Georgia Phone Number: (706) 335-4200 Website: www.commercega.orgContentDef...

  15. North Georgia Elec Member Corp | Open Energy Information

    Open Energy Info (EERE)

    navigation, search Name: North Georgia Elec Member Corp Place: Georgia Phone Number: Dalton: (706) 259-9441; Fort Oglethorpe: (706) 866-2231; Calhoun: (706) 629-3160; Trion:...

  16. Ben Hill County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Climate Zone Number 3 Climate Zone Subtype A. Places in Ben Hill County, Georgia Fitzgerald, Georgia Retrieved from "http:en.openei.orgwindex.php?titleBenHillCounty,Geo...

  17. Pine Mountain, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    article is a stub. You can help OpenEI by expanding it. Pine Mountain is a town in Harris County and Meriwether County, Georgia. It falls under Georgia's 3rd congressional...

  18. McCaysville, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Act Smart Grid Projects in McCaysville, Georgia Tri State Electric Membership Corporation Smart Grid Project Utility Companies in McCaysville, Georgia Tri-State Electric Member...

  19. College Park, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. College Park is a city in Clayton County and Fulton County, Georgia. It falls under Georgia's 5th...

  20. FORESTRY COLORADO WESTERN POWER ADMIN POC Cheryl Drake Telephone

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    FORESTRY COLORADO WESTERN POWER ADMIN POC Cheryl Drake Telephone (720) 962-7154 Email drake@wapa.gov Timber tract operations 113110 Cutting and transporting timber 113310 GEORGIA ...

  1. GreyStone Power Corporation | Open Energy Information

    Open Energy Info (EERE)

    Corporation Place: Georgia Phone Number: 770.942.6576 Website: www.greystonepower.com Twitter: @GreyStonePower Facebook: https:www.facebook.comgreystonepower?rdr...

  2. 2014 Race to Zero Student Design Competition: Georgia Institute of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Technology Profile | Department of Energy Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia Institute of Technology Profile, from the U.S. Department of Energy. rtz_georgia_profile.pdf (4.02 MB) More Documents & Publications 2014 Race to Zero Student Design Competition: Auburn University Profile 2014 Race to Zero Student Design Competition: University of

  3. Georgia Power Company (GPC), Oglethorpe Power Corporation (OPC...

    Broader source: Energy.gov (indexed) [DOE]

    The project is the first U.S. deployment of the Westinghouse AP1000 Generation III+ reactor. The AP1000 was designed by Westinghouse as the next generation nuclear reactor that ...

  4. SOCO-4-E Wholesale Power Rate Schedule | Department of Energy

    Office of Environmental Management (EM)

    4-E Wholesale Power Rate Schedule SOCO-4-E Wholesale Power Rate Schedule Area: OPC System: Georgia-Alabama-South Carolina This rate schedule shall be available to public bodies and cooperatives (any one of whom is hereinafter called the Customer) in Georgia, Alabama, Mississippi, and Florida served through the transmission facilities of Southern Company Services, Inc. (hereinafter called the Company) or the Georgia Integrated Transmission System. This rate schedule shall be applicable to the

  5. Water-supply potential of the Upper Floridan aquifer in the vicinity of Savannah, Georgia

    SciTech Connect (OSTI)

    Garza, R.; Krause, R.E. )

    1993-03-01

    The Upper Floridan aquifer is the primary source of freshwater in coastal Georgia. Groundwater withdrawal in the area of Savannah and in the adjacent coastal areas in Georgia and South Carolina has resulted in large regional water-level declines and a reversal of the hydraulic gradient that existed prior to development. Changes in gradient and decreasing water levels are causing lateral encroachment of seawater into the Upper Floridan aquifer at the northern end of Hilton Head Island, SC, and vertical intrusion of saltwater into the Upper and Lower Floridan aquifers in the Brunswick, GA., area. Concerns about future water-supply demands prompted the US Geological Survey and the Chatham County-Savannah Metropolitan Planning Commission to undertake a cooperative study to evaluate the ground-water resources in the Savannah, GA, area. A numerical ground-water flow model was developed and used in conjunction with other previously calibrated models in the coastal areas of Georgia and South Carolina to simulate the effects of additional ground-water withdrawal on water levels. Based on model simulations and the constraint of preventing additional water-level declines at the locations of encroachment and intrusion, the potential of the Upper Floridan aquifer to supply additional water in the Savannah area is limited under present hydrologic conditions. The potential for additional withdrawal in the vicinity of Savannah, GA, ranges from less than 1 million gallons per day (Mgal/d) to about 5 Mgal/d. Because of the limited water-supply potential, hypothetical alternatives of ground-water withdrawal were simulated to determine the effects on water levels. These simulations indicate that reduction and redistribution of ground-water withdrawal would not adversely affect water levels at the locations of encroachment and intrusion.

  6. Georgia Mountain | Open Energy Information

    Open Energy Info (EERE)

    Developer All Earth Renewables Energy Purchaser Green Mountain Power Location Milton VT Coordinates 44.662351, -73.067991 Show Map Loading map... "minzoom":false,"map...

  7. CONSENT-BASED SITING PUBLIC MEETING Georgia Tech Hotel and Conference Center

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Georgia Tech Hotel and Conference Center 800 Spring Street N.W. Atlanta, GA 30308 April 11, 2016 FULL TRANSCRIPT Mr. Jim Hamilton. Good afternoon, and to those in earlier time zones via webinar, good morning. Welcome, and thank you all for being here today. My name is Jim Hamilton. I'm an advisor to the Department of Energy's Consent-Based Siting Team, and my role today is to help us all have an open and productive conversation. To start off we have a few housekeeping issues to go over, and I'll

  8. Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography

    SciTech Connect (OSTI)

    Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Xiong, Zhuo; Shang, Liang; Tian, Yingdong; Zhao, Yun; Zhou, Pengyu; Wang, Junxi; Li, Jinmin [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-07-07

    The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6 through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCs is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350?mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.

  9. EA-1963: Elba Liquefaction Project, Savannah, Georgia

    Office of Energy Efficiency and Renewable Energy (EERE)

    The Federal Energy Regulatory Commission (FERC) is preparing, with DOE as a cooperating agency, an EA to analyze the potential environmental impacts of a proposal to add natural gas liquefaction and export capabilities at the existing Elba Liquefied Natural Gas Terminal near Savannah, Georgia. Additional information is available at FERCs eLibrary website, elibrary.ferc.gov/idmws/docket_search.asp; search for docket number PF13-3.

  10. Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy

    SciTech Connect (OSTI)

    Iwata, Yoshiya; Banal, Ryan G.; Ichikawa, Shuhei; Funato, Mitsuru; Kawakami, Yoichi

    2015-02-21

    The optical properties of Al-rich AlGaN/AlN quantum wells are assessed by excitation-power-dependent time-integrated (TI) and time-resolved (TR) photoluminescence (PL) measurements. Two excitation sources, an optical parametric oscillator and the 4th harmonics of a Ti:sapphire laser, realize a wide range of excited carrier densities between 10{sup 12} and 10{sup 21 }cm{sup −3}. The emission mechanisms change from an exciton to an electron-hole plasma as the excitation power increases. Accordingly, the PL decay time is drastically reduced, and the integrated PL intensities increase in the following order: linearly, super-linearly, linearly again, and sub-linearly. The observed results are well accounted for by rate equations that consider the saturation effect of non-radiative recombination processes. Using both TIPL and TRPL measurements allows the density of non-radiative recombination centers, the internal quantum efficiency, and the radiative recombination coefficient to be reliably extracted.

  11. Tapping into Wave and Tidal Ocean Power: 15% Water Power by 2030 |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy into Wave and Tidal Ocean Power: 15% Water Power by 2030 Tapping into Wave and Tidal Ocean Power: 15% Water Power by 2030 January 27, 2012 - 11:30am Addthis A map generated by Georgia Tech's tidal energy resource database shows mean current speed of tidal streams. The East Coast, as shown above, has strong tides that could be tapped to produce energy. | Photo courtesy of Georgia Institute of Technology A map generated by Georgia Tech's tidal energy resource database

  12. City of Mansfield, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    search Name: City of Mansfield Place: Georgia Website: www.mansfieldga.comutilities. Facebook: https:www.facebook.commansfieldga Outage Hotline: 770-710-8235 References: EIA...

  13. EA-1963: Elba Liquefaction Project, Savannah, Georgia | Department...

    Broader source: Energy.gov (indexed) [DOE]

    Gas Terminal near Savannah, Georgia. Additional information is available at FERC's eLibrary website, elibrary.ferc.govidmwsdocketsearch.asp; search for docket number PF13-3....

  14. EECBG Success Story: Georgia County Turning Industrial and Farm...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Georgia County Turning Industrial and Farm Waste Into Big Energy Savings EECBG Success ... Learn more. Addthis Related Articles EECBG Success Story: County Aims to Save with ...

  15. Georgia-UNEP Risoe Technology Needs Assessment Program | Open...

    Open Energy Info (EERE)

    UNEP Risoe Technology Needs Assessment Program Jump to: navigation, search Name Georgia-UNEP Risoe-Technology Needs Assessment Program AgencyCompany Organization UNEP-Risoe...

  16. Building America Case Study: Savannah Gardens, Savannah, Georgia...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Savannah Gardens Savannah, Georgia PROJECT INFORMATION Construction: New home Type: Single-family, affordable Partners: Savannah Housing Department Chatham Home Builders Southface ...

  17. Georgia Department of Natural Resources (GDNR) | Open Energy...

    Open Energy Info (EERE)

    References Retrieved from "http:en.openei.orgwindex.php?titleGeorgiaDepartmentofNaturalResources(GDNR)&oldid765343" Categories: Organizations Oil and Gas State Oil and...

  18. Stone Mountain, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Stone Mountain, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.8081608, -84.170196 Show Map Loading map... "minzoom":false,"mappin...

  19. Sandy Springs, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Springs, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.9242688, -84.3785379 Show Map Loading map... "minzoom":false,"mappingservi...

  20. Georgia's 9th congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    Resource Solutions ECO Solutions LLC Greenleaf Environmental Solutions Wilson and Dalton Utility Companies in Georgia's 9th congressional district Tri-State Electric Member...

  1. Atkinson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Atkinson County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.2932161, -82.8640623 Show Map Loading map... "minzoom":false,"mapp...

  2. Georgia's 6th congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    Grid Project Registered Energy Companies in Georgia's 6th congressional district Atlanta Chemical Engineering LLC Cellnet Legacy Environmental Solutions Prenova Inc formerly...

  3. Georgia's 11th congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    Grid Project Registered Energy Companies in Georgia's 11th congressional district Atlanta Chemical Engineering LLC Prenova Inc formerly Service Resources Inc Sriya Innovations Inc...

  4. Georgia's 13th congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    Grid Project Registered Energy Companies in Georgia's 13th congressional district Atlanta Chemical Engineering LLC Prenova Inc formerly Service Resources Inc Sriya Innovations Inc...

  5. Cobb County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Smart Grid Project Registered Energy Companies in Cobb County, Georgia Atlanta Chemical Engineering LLC H I Solutions Inc Prenova Inc formerly Service Resources Inc...

  6. Polk County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Polk County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.0132398, -85.1479364 Show Map Loading map... "minzoom":false,"mappings...

  7. Washington County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Washington County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 32.962702, -82.820974 Show Map Loading map... "minzoom":false,"mapp...

  8. Pierce County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Pierce County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.343806, -82.1713632 Show Map Loading map... "minzoom":false,"mapping...

  9. Barrow County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Barrow County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.0142667, -83.6986568 Show Map Loading map... "minzoom":false,"mappin...

  10. Sakis Meliopoulos, Georgia Institute of Technology, PSERC webinar...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Professor School of Electrical and Computer Engineering Georgia Institute of ... and ElectroMagnetic Interference) computer code, and the mGrid computer code - a ...

  11. QER SECOND INSTALLMENT PUBLIC MEETING-ATLANTA, GEORGIA | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy ATLANTA, GEORGIA QER SECOND INSTALLMENT PUBLIC MEETING-ATLANTA, GEORGIA MEETING DATE AND LOCATION Tuesday, May 24, 2016 Doors open: 9:00 AM; Program begins: 10:00 AM Georgia Tech GTRI Conference Center 250 14th Street, NW Atlanta, Georgia 30318 Watch the May 24th Atlanta meeting here. MEETING INFORMATION The Quadrennial Energy Review Task Force will host a public stakeholder meeting on the second installment of the Quadrennial Energy Review (QER), an integrated study of the U.S.

  12. Georgia's 4th congressional district: Energy Resources | Open...

    Open Energy Info (EERE)

    Vega Biofuels Inc formerly Vega Promotional Systems Retrieved from "http:en.openei.orgwindex.php?titleGeorgia%27s4thcongressionaldistrict&oldid1854...

  13. Georgia Green Loans Save & Sustain Program | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    technologies not identified Program Info Sector Name Non-Profit Administrator Georgia Green Loans Website http:www.georgiagreenloans.org Funding Source U.S. Small Business...

  14. Dawson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Dawson County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.412912, -84.1435136 Show Map Loading map... "minzoom":false,"mapping...

  15. Hall County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hall County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.30778, -83.804868 Show Map Loading map... "minzoom":false,"mappingserv...

  16. Clay County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.6447931, -85.0025539 Show Map Loading map... "minzoom":false,"mappingservice":"goog...

  17. Irwin County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Irwin County, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 31.5893221, -83.2934086 Show Map Loading map... "minzoom":false,"mapping...

  18. ,"Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand...

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet)",1,"Annual",2012 ,"Release...

  19. ,"Georgia Natural Gas Imports Price All Countries (Dollars per...

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Imports Price All Countries (Dollars per Thousand Cubic Feet)",1,"Annual",2014...

  20. Georgia-World Bank Climate Projects | Open Energy Information

    Open Energy Info (EERE)

    Projects Jump to: navigation, search Name Georgia-World Bank Climate Projects AgencyCompany Organization World Bank Focus Area Renewable Energy, Hydro Topics Background analysis...

  1. Mountain Park, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Park, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.8442715, -84.1293605 Show Map Loading map... "minzoom":false,"mappingservice"...

  2. Gresham Park, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Gresham Park, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.7034405, -84.3143682 Show Map Loading map... "minzoom":false,"mapping...

  3. Belvedere Park, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Belvedere Park, Georgia: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 32.4606984, -84.9040969 Show Map Loading map... "minzoom":false,"mappi...

  4. Georgia Nuclear Profile - All Fuels

    U.S. Energy Information Administration (EIA) Indexed Site

    total electric power industry, summer capacity and net generation, by energy source, 2010" "Primary energy source","Summer capacity (mw)","Share of State total (percent)","Net generation (thousand mwh)","Share of State total (percent)" "Nuclear","4,061",11.1,"33,512",24.4 "Coal","13,230",36.1,"73,298",53.3 "Hydro and Pumped

  5. Environmental radionuclide distribution in Georgia after the Chernobyl accident

    SciTech Connect (OSTI)

    Mosulishvili, L.M.; Shoniya, N.I.; Katamadze, N.M.

    1994-01-01

    Atmospheric Chernobyl-released radioactivity, assessed at about 2 x 10{sup 18} Bq, caused global environmental contamination. Contaminated air masses appeared in the Transcaucasian region in early May, 1986. Rains that month promoted intense radionuclide deposition all over Georgia. The contamination level of western Georgia considerably exceeded the contamination level of eastern Georgia. The Black Sea coast of Georgia suffered from the Chernobyl accident as much as did strongly contaminated areas of the Ukraine and Belarus`. Unfortunately, governmental decrees on countermeasures against the consequences of the Chernobyl accident at that time did not even refer to the coast of Georgia. The authors observed the first increase in radioactivity background in rainfall samples collected on May 2, 1986, in Tbilisi. {gamma}-Spectrometric measurements of aerosol filters, vegetation, food stuffs, and other objects, in addition to rainfall, persistently confirmed the occurrence of short-lived radionuclides, including {sup 131}I. At first, this fact seemed unbelievable, because the Chernobyl accident had occurred only 4-5 days earlier and far from Georgia. However, these arguments proved to be faulty. Soon, environmental monitoring of radiation in Georgia became urgent. Environmental radionuclide distribution in Georgia shortly after the Chernobyl accident, as well as the methods of analysis, are reported in this paper.

  6. Diverse Power- Energy Efficient New Construction Rebate Programs

    Broader source: Energy.gov [DOE]

    Diverse Power is a member-owned electric cooperative that provides electric service to customers in Troup, Harris, Heard, Meriwether, Muscogee and Coweta counties in Georgia. Diverse Power offers...

  7. GreyStone Power- Photovoltaic Rebate Program

    Office of Energy Efficiency and Renewable Energy (EERE)

    GreyStone Power, an electricity cooperative in Georgia, offers a rebate for solar photovoltaic (PV) systems to members. The one-time rebate is offered for PV installations that are interconnected...

  8. SOCO-2-E Wholesale Power Rate Schedule | Department of Energy

    Office of Environmental Management (EM)

    2-E Wholesale Power Rate Schedule SOCO-2-E Wholesale Power Rate Schedule Area: PowerSouth Off-System System: Georgia-Alabama-South Carolina This rate schedule shall be available to public bodies and cooperatives (any one of whom is hereinafter called the Customer) in Georgia, Alabama, Mississippi, and Florida to whom power may be transmitted pursuant to contracts between the Government and Southern Company Services, Incorporated (hereinafter called the Company) and the Customer. This rate

  9. SOUTHEASTERN FEDERAL POWER ALLIANCE - October 9, 2013 | Department of

    Office of Environmental Management (EM)

    Energy October 9, 2013 SOUTHEASTERN FEDERAL POWER ALLIANCE - October 9, 2013 Southeastern Federal Power Alliance meeting was held on October 9, 2013 at the Municipal Electric Authority of Georgia (MEAG) located at 1470 Riveredge Parkway NW, Atlanta, Georgia. Documents Available for Download Southeastern Federal Power Alliance Meeting Agenda (18.16 KB) Bonham - Introduction to MEAG Power (39.01 KB) Coffman - APPA and Federal Hydro (36.18 KB) Coffman Handout - WRDA Letter to Boxer and Vitter -

  10. Thermoelectric power generator module of 16x16 Bi{sub 2}Te{sub 3} and 0.6%ErAs:(InGaAs){sub 1-x}(InAlAs){sub x} segmented elements

    SciTech Connect (OSTI)

    Zeng Gehong; Bahk, Je-Hyeong; Bowers, John E.; Lu Hong; Gossard, Arthur C.; Singer, Suzanne L.; Majumdar, Arun; Bian, Zhixi; Zebarjadi, Mona; Shakouri, Ali

    2009-08-24

    We report the fabrication and characterization of thermoelectric power generator modules of 16x16 segmented elements consisting of 0.8 mm thick Bi{sub 2}Te{sub 3} and 50 {mu}m thick ErAs:(InGaAs){sub 1-x}(InAlAs){sub x} with 0.6% ErAs by volume. An output power up to 6.3 W was measured when the heat source temperature was at 610 K. The thermoelectric properties of (InGaAs){sub 1-x}(InAlAs){sub x} were characterized from 300 up to 830 K. The finite element modeling shows that the performance of the generator modules can further be enhanced by improving the thermoelectric properties of the element materials, and reducing the electrical and thermal parasitic losses.

  11. Georgia Number of Natural Gas Consumers

    Gasoline and Diesel Fuel Update (EIA)

    Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2010 78 70 78 75 78 75 78 78 75 78 75 78 2011 93 84 93 90 93 90 93 93 90 93 90 93 2012 93 87 93 90 93 90 93 93 90 93 90 93 2013 85 77 85 82 85 82 85 85 82 85 82 85 2014 99 90 99 96 99 96 99 99 96 99 96 99 2015 105 95 105 102 105 92 99 99 96 99 96 99 2016 111 100 111 107 102 99

    Vehicle Fuel Price (Dollars per Thousand Cubic Feet) Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3

  12. Mitchell County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Mitchell County is a county in Georgia. Its FIPS County Code is 205. It is classified as...

  13. Jackson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Jackson County is a county in Georgia. Its FIPS County Code is 157. It is classified as...

  14. Johnson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Johnson County is a county in Georgia. Its FIPS County Code is 167. It is classified as...

  15. Richmond County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Richmond County is a county in Georgia. Its FIPS County Code is 245. It is classified as...

  16. Henry County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Henry County is a county in Georgia. Its FIPS County Code is 151. It is classified as ASHRAE...

  17. Miller County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Miller County is a county in Georgia. Its FIPS County Code is 201. It is classified as ASHRAE...

  18. Wheeler County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Wheeler County is a county in Georgia. Its FIPS County Code is 309. It is classified as...

  19. Stewart County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Stewart County is a county in Georgia. Its FIPS County Code is 259. It is classified as...

  20. Lee County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Lee County is a county in Georgia. Its FIPS County Code is 177. It is classified as ASHRAE...

  1. Murray County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Murray County is a county in Georgia. Its FIPS County Code is 213. It is classified as ASHRAE...

  2. Tift County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Its FIPS County Code is 277. It is classified as ASHRAE 169-2006 Climate Zone Number 3 Climate Zone Subtype A. Registered Energy Companies in Tift County, Georgia Biomass...

  3. Floyd County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Floyd County is a county in Georgia. Its FIPS County Code is 115. It is classified as ASHRAE...

  4. White County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. White County is a county in Georgia. Its FIPS County Code is 311. It is classified as ASHRAE...

  5. Montgomery County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Montgomery County is a county in Georgia. Its FIPS County Code is 209. It is classified as...

  6. Pike County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Pike County is a county in Georgia. Its FIPS County Code is 231. It is classified as ASHRAE...

  7. City of Palmetto, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    Place: Georgia Phone Number: (770) 463-3322 Website: citypalmetto.comindex.aspx?ni Outage Hotline: (770) 463-3322 References: EIA Form EIA-861 Final Data File for 2010 -...

  8. FUPWG Meeting Agenda - Jekyll Island, Georgia | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    FUPWG Meeting Agenda - Jekyll Island, Georgia Logo for the FUPWG Spring 2012 meeting showing a crane, a lake, and wind turbines. The logo reads: Preserving our future with energy ...

  9. Webster County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Webster County is a county in Georgia. Its FIPS County Code is 307. It is classified as...

  10. Taylor County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Taylor County is a county in Georgia. Its FIPS County Code is 269. It is classified as ASHRAE...

  11. Evans County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hide Map This article is a stub. You can help OpenEI by expanding it. Evans County is a county in Georgia. Its FIPS County Code is 109. It is classified as ASHRAE...

  12. Central Georgia EMC- Residential Energy Efficiency Rebate Program

    Broader source: Energy.gov [DOE]

    Central Georgia Electric Member Corporation (CGEMC) offers rebates for residential customers to increase the energy efficiency of existing homes or to build new energy efficient homes.  This year,...

  13. Georgia Tech's Rohatgi Wins Second Annual Rappaport Award - News Releases |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NREL Georgia Tech's Rohatgi Wins Second Annual Rappaport Award December 10, 2003 Golden, Colo. - The U.S. Department of Energy's National Renewable Energy Laboratory (NREL) has presented the 2003 Paul Rappaport Renewable Energy and Energy Efficiency Award to Ajeet Rohatgi, founding director of the University Center of Excellence for Photovoltaics Research and Education at the Georgia Institute of Technology. "Dr. Rohatgi has for more than a quarter century focused his immense technical

  14. Replacement-1 Wholesale Power Rate Schedule | Department of Energy

    Office of Environmental Management (EM)

    Replacement-1 Wholesale Power Rate Schedule Replacement-1 Wholesale Power Rate Schedule Area: Replacement Energy System: Georgia-Alabama-South Carolina This rate schedule shall be available to public bodies and cooperatives (any one of whom is hereinafter called the Customer) in Georgia, Alabama, Mississippi, Florida, South Carolina, or North Carolina to whom power is provided pursuant to contracts between the Government and the Customer. This rate schedule shall be applicable to the sale at

  15. SOCO-3-E Wholesale Power Rate Schedule | Department of Energy

    Office of Environmental Management (EM)

    3-E Wholesale Power Rate Schedule SOCO-3-E Wholesale Power Rate Schedule Area: MEAG, Dalton System: Georgia-Alabama-South Carolina This rate schedule shall be available to public bodies and cooperatives (any one of whom is hereinafter called the Customer) in Georgia, Alabama, Mississippi, and Florida to whom power may be scheduled pursuant to contracts between the Government and Southern Company Services, Incorporated (hereinafter called the Company) and the Customer. This rate schedule shall be

  16. Long-Term Need for New Nuclear Workers The SRS Community Reuse Organization (SRSCRO) Region of Georgia

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Long-Term Need for New Nuclear Workers The SRS Community Reuse Organization (SRSCRO) Region of Georgia and South Carolina has the most unique nuclear industry capabilities in the nation. This region is at the forefront of new nuclear power production, environmental stewardship, innovative technology and national security. In 2009, the SRSCRO commissioned a survey of eight area nuclear employers that concluded nearly 10,000 new workers will be needed in the next decade to support existing

  17. Georgia Natural Gas Deliveries to Electric Power Consumers (Million Cubic

    U.S. Energy Information Administration (EIA) Indexed Site

    Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2001 401 554 506 2,689 2,635 4,291 7,681 9,154 4,276 1,788 338 354 2002 1,191 887 863 3,430 3,377 7,736 12,902 11,906 7,887 4,206 849 1,354 2003 3,221 638 867 3,973 2,448 3,000 5,906 8,337 2,629 590 206 443 2004 1,274 1,704 2,152 4,875 6,650 6,005 7,918 7,322 3,993 1,716 573 1,743 2005 3,476 1,066 2,035 808 3,050 8,374 13,538 15,011 11,382 4,592 3,122 5,814 2006 1,368 4,057 3,476 6,395 7,215 11,768 18,747 19,963 7,802 6,850 3,690

  18. Georgia Power Compnay Three 30 MW Renewable Projects

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of the electric utility industry, environmental laws including regulation of water, coal combustion residuals, and emissions of sulfur, nitrogen, carbon dioxide, soot, particulate ...

  19. Georgia Natural Gas Deliveries to Electric Power Consumers (Million Cubic

    U.S. Energy Information Administration (EIA) Indexed Site

    Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 17,054 33,351 32,505 2000's 42,034 34,666 56,588 32,258 45,926 72,267 95,407 121,726 96,316 142,467 2010's 175,082 196,492 308,096 279,506 289,783 354,090

  20. GreyStone Power- Solar Water Heating Program

    Office of Energy Efficiency and Renewable Energy (EERE)

    GreyStone Power, an electricity cooperative serving 103,000 customers in Georgia, introduced a solar water heating rebate in March 2009. This $500 rebate is available to customers regardless of...

  1. Bacon County, Georgia ASHRAE 169-2006 Climate Zone | Open Energy...

    Open Energy Info (EERE)

    Bacon County, Georgia ASHRAE 169-2006 Climate Zone Jump to: navigation, search County Climate Zone Place Bacon County, Georgia ASHRAE Standard ASHRAE 169-2006 Climate Zone Number...

  2. Barrow County, Georgia ASHRAE 169-2006 Climate Zone | Open Energy...

    Open Energy Info (EERE)

    Barrow County, Georgia ASHRAE 169-2006 Climate Zone Jump to: navigation, search County Climate Zone Place Barrow County, Georgia ASHRAE Standard ASHRAE 169-2006 Climate Zone Number...

  3. Ben Hill County, Georgia ASHRAE 169-2006 Climate Zone | Open...

    Open Energy Info (EERE)

    Ben Hill County, Georgia ASHRAE 169-2006 Climate Zone Jump to: navigation, search County Climate Zone Place Ben Hill County, Georgia ASHRAE Standard ASHRAE 169-2006 Climate Zone...

  4. Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    MWh Coal Power 69,524,670 MWh Gas Power 20,301,025 MWh Petroleum Power 644,996 MWh Nuclear Power 31,682,579 MWh Other 26,648 MWh Total Energy Production 128,438,721 MWh...

  5. Wood energy in Georgia: a five-year progress report

    SciTech Connect (OSTI)

    Not Available

    1982-01-01

    An increasing number of industrial plants and public and residential facilities in Georgia are using wood, Georgia's greatest renewable energy source, to replace gas, oil, coal, and electricity. All wood systems described in this report are or will soon be in operation in schools, prisons, hospitals, and other state facilities, and are producing substantial financial savings. The economic values from increased markets and jobs are important in all areas of the state, with total benefits projected at $2.9 million a year for state taxpayers. 2 figures.

  6. Georgia Natural Gas Underground Storage Withdrawals (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Withdrawals (Million Cubic Feet) Georgia Natural Gas Underground Storage Withdrawals (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1970's 33 27 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 8/31/2016 Next Release Date: 9/30/2016 Referring Pages: Withdrawals of Natural Gas from Underground Storage - All Operators Georgia Underground Natural Gas Storage -

  7. Alternative Fuels Data Center: Georgia Sets the Pace for Plug-In Electric

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    Vehicles Georgia Sets the Pace for Plug-In Electric Vehicles to someone by E-mail Share Alternative Fuels Data Center: Georgia Sets the Pace for Plug-In Electric Vehicles on Facebook Tweet about Alternative Fuels Data Center: Georgia Sets the Pace for Plug-In Electric Vehicles on Twitter Bookmark Alternative Fuels Data Center: Georgia Sets the Pace for Plug-In Electric Vehicles on Google Bookmark Alternative Fuels Data Center: Georgia Sets the Pace for Plug-In Electric Vehicles on Delicious

  8. Microsoft PowerPoint - 3M WEEC 2012.pptx

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... S I C I I I S C C S S S R S S C I S 43 Lean Six Sigma BB S I S I I S S C C S S C R S I ... Innovation Institute Georgia Manufacturing Extension Partnership (GaMEP) Energy ...

  9. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  10. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect (OSTI)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  11. CU-Replacement-3 Wholesale Power Rate Schedule | Department of Energy

    Energy Savers [EERE]

    Replacement-3 Wholesale Power Rate Schedule CU-Replacement-3 Wholesale Power Rate Schedule Area: Virginia, North Carolina, Tennessee, Georgia, Alabama, Mississippi, Kentucky, southern Illinois System: CU This rate schedule shall be available to public bodies and cooperatives ( any one of whom is hereinafter called the Customer) in Virginia, North Carolina, Tennessee, Georgia, Alabama, Mississippi, Kentucky and southern Illinois to whom power is provided pursuant to contracts between the

  12. US SoAtl GA Site Consumption

    Gasoline and Diesel Fuel Update (EIA)

    household averages. * Per household electricity consumption in Georgia is among the highest in ... CONSUMPTION BY END USE Georgia is one of the few states where at least 30% of ...

  13. UTILITIES COLORADO WESTERN POWER ADMIN POC Cheryl Drake Telephone

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    UTILITIES COLORADO WESTERN POWER ADMIN POC Cheryl Drake Telephone (720) 962-7154 Email drake@wapa.gov Electric Bulk Power Transmission and Control 221121 Electric Power Distribution 221122 GEORGIA SOUTHEASTERN POWER ADMIN POC Ann Craft Telephone (706) 213-3823 Email annc@sepa.doe.gov Electric Bulk Power Transmission and Control 221121 Electric Power Distribution 221122 OKLAHOMA SOUTHWESTERN POWER ADMIN POC Gary Bridges Telephone (918) 595-6671 Email gary.bridges@swpa.gov Electric Bulk Power

  14. High-performance InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor

    SciTech Connect (OSTI)

    Tsai, J.-H. Chiu, S.-Y.; Lour, W.-S.; Guo, D.-F.

    2009-07-15

    In this article, a novel InGaP/GaAs pnp {delta}-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a {delta}-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

  15. NATIONAL GEODATABASE OF TIDAL STREAM POWER RESOURCE IN USA

    SciTech Connect (OSTI)

    Smith, Brennan T; Neary, Vincent S; Stewart, Kevin M

    2012-01-01

    A geodatabase of tidal constituents is developed to present the regional assessment of tidal stream power resource in the USA. Tidal currents are numerically modeled with the Regional Ocean Modeling System (ROMS) and calibrated with the available measurements of tidal current speeds and water level surfaces. The performance of the numerical model in predicting the tidal currents and water levels is assessed by an independent validation. The geodatabase is published on a public domain via a spatial database engine with interactive tools to select, query and download the data. Regions with the maximum average kinetic power density exceeding 500 W/m2 (corresponding to a current speed of ~1 m/s), total surface area larger than 0.5 km2 and depth greater than 5 m are defined as hotspots and documented. The regional assessment indicates that the state of Alaska (AK) has the largest number of locations with considerably high kinetic power density, followed by, Maine (ME), Washington (WA), Oregon (OR), California (CA), New Hampshire (NH), Massachusetts (MA), New York (NY), New Jersey (NJ), North and South Carolina (NC, SC), Georgia (GA), and Florida (FL).

  16. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  17. sorbent-georgia-tech | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Rapid Temperature Swing Adsorption Using Polymer/Supported Amine Composite Hollow Fibers Project No.: DE-FE0007804 Georgia Tech Research Corporation is developing, fabricating, and testing a novel supported amine carbon dioxide (CO2) capture module at the bench scale. The module consists of hollow fibers loaded with supported adsorbents specifically adapted for the purpose of CO2 capture. Two key innovations are embodied in the design: (1) the fiber is highly loaded with the solid adsorbent to

  18. Secretary Chu Visits Vogtle Nuclear Power Plant | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Vogtle Nuclear Power Plant Secretary Chu Visits Vogtle Nuclear Power Plant February 15, 2012 - 3:54pm Addthis Secretary Chu traveled to Waynesboro, Georgia, to visit the Vogtle nuclear power plant, the site of what will be the first new nuclear reactors to be built in the United States in three decades. | Image credit: Southern Company. Secretary Chu traveled to Waynesboro, Georgia, to visit the Vogtle nuclear power plant, the site of what will be the first new nuclear reactors to be built in

  19. Wide Bandgap Power Electronics

    Office of Environmental Management (EM)

    ... coal power plant. 463 In addition to power savings, an important benefit of using high frequency GaN electronics is that the 464 adapter size can be reduced by 10x. Consumers ...

  20. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

    SciTech Connect (OSTI)

    Li, Yi; Liu, Bin E-mail: rzhang@nju.edu.cn; Zhang, Rong E-mail: rzhang@nju.edu.cn; Xie, Zili; Zhuang, Zhe; Dai, JiangPing; Tao, Tao; Zhi, Ting; Zhang, Guogang; Chen, Peng; Ren, Fangfang; Zhao, Hong; Zheng, Youdou

    2015-04-21

    Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620?nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%53% as compared to that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.

  1. Registration Open for National Environmental Justice Advisory Council (NEJAC) Public Meeting, September 11-12, 2013, Atlanta, Georgia

    Broader source: Energy.gov [DOE]

    Registration Open for National Environmental Justice Advisory Council (NEJAC) Public Meeting, September 11-12, 2013, Atlanta, Georgia.

  2. Georgia Natural Gas Input Supplemental Fuels (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Input Supplemental Fuels (Million Cubic Feet) Georgia Natural Gas Input Supplemental Fuels (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1960's 0 0 0 1970's 0 0 0 0 0 0 0 0 0 0 1980's 24 57 151 84 28 121 124 248 241 292 1990's 209 185 166 199 123 130 94 14 16 12 2000's 73 51 7 14 5 0 3 2 52 2010's 732 701 660 642 635 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data.

  3. Georgia Natural Gas Underground Storage Injections All Operators (Million

    U.S. Energy Information Administration (EIA) Indexed Site

    Cubic Feet) Underground Storage Injections All Operators (Million Cubic Feet) Georgia Natural Gas Underground Storage Injections All Operators (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1970's 123 366 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 8/31/2016 Next Release Date: 9/30/2016 Referring Pages: Injections of Natural Gas into Underground

  4. Georgia Natural Gas Underground Storage Net Withdrawals All Operators

    U.S. Energy Information Administration (EIA) Indexed Site

    (Million Cubic Feet) Net Withdrawals All Operators (Million Cubic Feet) Georgia Natural Gas Underground Storage Net Withdrawals All Operators (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1970's -90 -339 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 8/31/2016 Next Release Date: 9/30/2016 Referring Pages: Net Withdrawals of Natural Gas from

  5. On-sun concentrator performance of GaInP/GaAs tandem cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Sinha, K.; McMahon, W.E.; Olson, J.M.

    1996-05-01

    The GaInP/GaAs concentrator device has been adapted for and tested in a prototype {open_quotes}real-world{close_quotes} concentrator power system. The device achieved an on-sun efficiency of 28% {+-} 1% in the range of approximately 200-260 suns with device operating temperatures of 38{degrees}C to 42{degrees}C. The authors discuss ways of further improving this performance for future devices.

  6. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

    SciTech Connect (OSTI)

    Ji, Hai-Ming; Liang, Baolai Simmonds, Paul J.; Juang, Bor-Chau; Yang, Tao; Young, Robert J.; Huffaker, Diana L.

    2015-03-09

    We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

  7. Remarks by Federal Blue Ribbon Commission J. David Jameson Atlanta, GA

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Federal Blue Ribbon Commission J. David Jameson Atlanta, GA October 18, 2011 Good Morning. I am David Jameson. I am President and CEO of the Greater Aiken, South Carolina, Chamber of Commerce. I am here today in my capacity as current Chairman of the SRS Community Reuse Organization. The SRSCRO is a non-profit regional group supporting economic diversification and job creation in a five-county in Georgia and South Carolina near the Department of Energy's Savannah River Site. We are unique among

  8. LPO: Ga Power Gallery | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Addthis Image 1 1 of 3 Image 1 Image 1 Image 2 2 of 3 Image 2 Image 3 3 of 3 Image 3 View All Galleries Careers & Internships Open Solicitations Apply Now Energy.gov...

  9. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  10. Georgia Natural Gas LNG Storage Net Withdrawals (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Net Withdrawals (Million Cubic Feet) Georgia Natural Gas LNG Storage Net Withdrawals (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 534 -1,598 -1,359 -169 -203 -525 596 149 545 343 1990's 1,345 390 16 -42 -94 -1,464 -189 -153 -698 -1,403 2000's -1,126 6,210 2,397 -2,138 -1,052 -1,436 -5,737 1,323 2,481 1,972 2010's 379 2,542 1,378 1,205 3,085 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure

  11. Georgia Natural Gas Vehicle Fuel Consumption (Million Cubic Feet)

    Gasoline and Diesel Fuel Update (EIA)

    Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 17,054 33,351 32,505 2000's 42,034 34,666 56,588 32,258 45,926 72,267 95,407 121,726 96,316 142,467 2010's 175,082 196,492 308,096 279,506 289,783 354,090 Feet)

    Price All Countries (Dollars per Thousand Cubic Feet) Georgia Natural Gas Imports Price All Countries (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's -- 2000's -- 1.92

  12. Georgia Natural Gas LNG Storage Additions (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Additions (Million Cubic Feet) Georgia Natural Gas LNG Storage Additions (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 20,484 1,508 1,555 1,024 678 1,834 1,942 1,150 1,702 2,930 1990's 2,779 1,969 1,573 1,855 3,788 3,746 6,523 3,221 1,760 607 2000's 3,241 6,772 3,426 5,422 5,570 5,971 7,705 2,817 4,372 3,182 2010's 2,693 3,306 2,097 1,385 7,130 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid

  13. Georgia Natural Gas LNG Storage Withdrawals (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Withdrawals (Million Cubic Feet) Georgia Natural Gas LNG Storage Withdrawals (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 19,950 3,106 2,914 1,193 881 2,359 1,346 1,001 1,157 2,586 1990's 1,435 1,579 1,557 1,896 3,881 5,210 6,712 3,374 2,458 2,010 2000's 4,367 562 1,029 3,283 4,518 4,535 1,968 1,493 1,891 1,210 2010's 2,314 764 719 180 4,046 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure

  14. Georgia Natural Gas Number of Commercial Consumers (Number of Elements)

    U.S. Energy Information Administration (EIA) Indexed Site

    Commercial Consumers (Number of Elements) Georgia Natural Gas Number of Commercial Consumers (Number of Elements) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 94 98,809 102,277 106,690 1990's 108,295 109,659 111,423 114,889 117,980 120,122 123,200 123,367 126,050 225,020 2000's 128,275 130,373 128,233 129,867 128,923 128,389 127,843 127,832 126,804 127,347 2010's 124,759 123,454 121,243 126,060 122,573 - = No Data Reported; -- = Not Applicable; NA = Not

  15. Georgia Natural Gas Number of Industrial Consumers (Number of Elements)

    U.S. Energy Information Administration (EIA) Indexed Site

    Industrial Consumers (Number of Elements) Georgia Natural Gas Number of Industrial Consumers (Number of Elements) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 3 3,034 3,144 3,079 1990's 3,153 3,124 3,186 3,302 3,277 3,261 3,310 3,310 3,262 5,580 2000's 3,294 3,330 3,219 3,326 3,161 3,543 3,053 2,913 2,890 2,254 2010's 2,174 2,184 2,112 2,242 2,481 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual

  16. Georgia Natural Gas Number of Residential Consumers (Number of Elements)

    U.S. Energy Information Administration (EIA) Indexed Site

    Residential Consumers (Number of Elements) Georgia Natural Gas Number of Residential Consumers (Number of Elements) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 1,190 1,237,201 1,275,128 1,308,972 1990's 1,334,935 1,363,723 1,396,860 1,430,626 1,460,141 1,495,992 1,538,458 1,553,948 1,659,730 1,732,865 2000's 1,680,749 1,737,850 1,735,063 1,747,017 1,752,346 1,773,121 1,726,239 1,793,650 1,791,256 1,744,934 2010's 1,740,587 1,740,006 1,739,543 1,805,425

  17. Georgia Natural Gas Pipeline and Distribution Use (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    (Million Cubic Feet) Georgia Natural Gas Pipeline and Distribution Use (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 7,973 7,606 8,846 2000's 5,636 7,411 7,979 7,268 6,235 5,708 6,092 5,188 5,986 6,717 2010's 8,473 10,432 10,509 7,973 6,977 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 8/31/2016 Next Release Date: 9/30/2016 Referring Pages:

  18. Georgia Natural Gas Total Consumption (Million Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Total Consumption (Million Cubic Feet) Georgia Natural Gas Total Consumption (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 371,376 368,579 337,576 2000's 413,845 351,109 383,546 379,761 394,986 412,560 420,469 441,107 425,043 462,799 2010's 530,030 522,897 615,771 625,283 652,230 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 8/31/2016 Next Release

  19. SOUTHEASTERN FEDERAL POWER ALLIANCE - September 29, 2015 | Department of

    Energy Savers [EERE]

    Energy September 29, 2015 SOUTHEASTERN FEDERAL POWER ALLIANCE - September 29, 2015 Southeastern Federal Power Alliance meeting was held on September 29, 2015 at the Oglethorpe Power Corporation, 2100 East Exchange Place, Tucker, Georgia. Documents Available for Download Alliance Team Meeting Agenda (359.26 KB) Overview of the Oglethorpe Power Corporation (809.21 KB) ACF Water Control Manual Update (713.33 KB) Operations Under Updated ACT Water Control Manual (2.14 MB) Allatoona Powerhouse

  20. Santee-2-E Wholesale Power Rate Schedule | Department of Energy

    Office of Environmental Management (EM)

    2-E Wholesale Power Rate Schedule Santee-2-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina This rate schedule shall be available to public bodies and cooperatives (any one of whom is hereinafter call the Customer) in South Carolina to whom power may be wheeled pursuant to contracts between the Government and South Carolina Public Service Authority (hereinafter called the Authority). This rate schedule shall be applicable to the sale at wholesale of power and

  1. Santee-3-E Wholesale Power Rate Schedule | Department of Energy

    Office of Environmental Management (EM)

    3-E Wholesale Power Rate Schedule Santee-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina This rate schedule shall be available to public bodies and cooperatives (any one of whom is hereinafter call the Customer) in South Carolina to whom power may be scheduled pursuant to contracts between the Government and South Carolina Public Service Authority (hereinafter called the Authority). This rate schedule shall be applicable to the sale at wholesale of power and

  2. Southeastern Power Administration Marti Ayers FOIA Officer S1200

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Southeastern Federal Power Alliance Southeastern Federal Power Alliance Southeastern Federal Power Alliance logo Partners Advancing Clean, Reliable Hydropower Sensing a need for a shared vision to accomplish Southeastern's mission, Southeastern formed a partnership with the South Atlantic Division, U.S. Army Corps of Engineers, and Georgia-Alabama-South Carolina preference customers in July 1991 - the Southeastern Federal Power Alliance. The Alliance's theme - "Partners Advancing Clean,

  3. sRecovery Act: Geologic Characterization of the South Georgia Rift Basin for Source Proximal CO2 Storage

    SciTech Connect (OSTI)

    Waddell, Michael

    2014-09-30

    the J/TR section based on neutron log porosity values. The only zones in Rizer #1 that appear to be porous were fractured diabase units where saline formation water was flowing into the borehole. Two geocellular models were created for the SC and GA study area. Flow simulation modeling was performed on the SC data set. The injection simulation used the newly acquired basin data as well as the Petrel 3-D geologic model that included geologic structure. Due to the new basin findings as a result of the newly acquired data, during phase two of the modeling the diabase unit was used as reservoir and the sandstone units were used as caprock. Conclusion are: 1) the SGR basin is composed of numerous sub-basins, 2) this study only looked at portions of two sub-basins, 3) in SC, 30 million tonnes of CO2 can be injected into the diabase units if the fracture network is continuous through the units, 4) due to the severity of the faulting there is no way of assuring the injected CO2 will not migrate upward into the overlying Coastal Plain aquifers, 5) in Georgia there appears to porous zones in the J/TR sandstones, 6) as in SC there is faulting in the sub-basin and the seismic suggest the faulting extends upward into the Coastal Plain making that area not suitable for CO2 sequestration, 7) the complex faulting observed at both study areas appear to be associated with transfer fault zones (Heffner 2013), if sub-basins in the Georgia portion of the SGR basin can be located that are far away from the transfer fault zones there is a strong possibility of sequestering CO2 in these areas, and 9) the SGR basin covers area in three states and this project only studied two small areas so there is enormous potential for CO2 sequestration in other portions the basin and further research needs to be done to find these areas.

  4. QUARTERLY NUCLEAR POWER DEPLOYMENT SUMMARY APRIL 2014

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    4 Updates available at: www.energy.gov/ne NEXT UPDATE - July 2014 Page 1 News Updates  On February 20, Secretary Moniz announced the issuance of loan guarantees totalling approximately $6.5 billion to Georgia Power Company and Oglethorpe Power Company for the construction of two new nuclear reactors at the Alvin W. Vogtle Electric Generating Plant. The Department continues to work on the remaining conditional commitment for a $1.8 billion loan guarantee to Municipal Electric Authority of

  5. Cost-Effectiveness of ASHRAE Standard 90.1-2010 for the State of Georgia

    SciTech Connect (OSTI)

    Hart, Philip R.; Rosenberg, Michael I.; Xie, YuLong; Zhang, Jian; Richman, Eric E.; Elliott, Douglas B.; Loper, Susan A.; Myer, Michael

    2013-11-01

    Moving to the ANSI/ASHRAE/IES Standard 90.1-2010 version from the Base Code (90.1-2007) is cost-effective for all building types and climate zones in the State of Georgia.

  6. EA-1255: Project Partnership Transportation of Foreign-Owned Enriched Uranium from the Republic of Georgia

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts for the proposal to transport 5.26 kilograms of enriched uranium-23 5 in the form of nuclear fuel, from the Republic of Georgia to the United Kingdom.

  7. EECBG Success Story: Georgia County Turning Industrial and Farm Waste Into Big Energy Savings

    Broader source: Energy.gov [DOE]

    Gwinnett County, Georgia built a "Gas to Energy" system at the city water resources center that will reduce operational costs and sanitary sewer overflows, thanks to an Energy Efficiency and Conservation Block Grant (EECBG). Learn more.

  8. Georgia County Turning Industrial and Farm Waste Into Big Energy Savings

    Office of Energy Efficiency and Renewable Energy (EERE)

    Thanks to a Department of Energy Recovery Act grant, Gwinnett County, Georgia is taking some of the grossest stuff on earth and turning it into some of the greenest stuff on earth.

  9. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5??10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  10. Georgia Regional High School Science Bowl | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    Georgia Regional High School Science Bowl National Science Bowl® (NSB) NSB Home About Regional Competitions Rules, Forms, and Resources High School Regionals Middle School Regionals National Finals Volunteers Key Dates Frequently Asked Questions News Media Contact Us WDTS Home Contact Information National Science Bowl® U.S. Department of Energy SC-27/ Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 E: Email Us High School Regionals Georgia Regional High School Science Bowl

  11. Georgia Regional Middle School Science Bowl | U.S. DOE Office of Science

    Office of Science (SC) Website

    (SC) Georgia Regional Middle School Science Bowl National Science Bowl® (NSB) NSB Home About Regional Competitions Rules, Forms, and Resources High School Regionals Middle School Regionals National Finals Volunteers Key Dates Frequently Asked Questions News Media Contact Us WDTS Home Contact Information National Science Bowl® U.S. Department of Energy SC-27/ Forrestal Building 1000 Independence Ave., SW Washington, DC 20585 E: Email Us Middle School Regionals Georgia Regional Middle School

  12. Microsoft Word - DOE-ID-12-028 Georgia Tech.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    8 SECTION A. Project Title: Nuclear Engineering and Science Equipment to Enhance Education and Research in Nuclear and Radiological Engineering at the Georgia Institute of Technology SECTION B. Project Description The Georgia Institute of Technology will address three areas with this project: -Enhancement in capabilities of an existing neutron generator through the addition of a pneumatic tube irradiation system, a shielded gamma spectrometry system, and glove box with additional barriers for

  13. Method of plasma etching GA-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2013-01-01

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

  14. General Atomics (GA) | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Atomics (GA) Subscribe to RSS - General Atomics (GA) General Atomics Image: General Atomics (GA) The Scorpion's Strategy: "Catch and Subdue" Read more about The Scorpion's...

  15. Tailored Working Fluids for Enhanced Binary Geothermal Power Plants

    SciTech Connect (OSTI)

    Mahmoud, Ahmad

    2013-01-29

    United Technologies Research Center (UTRC), in collaboration with the Georgia Institute of Technology and the National Institute of Standards and Technology will evaluate and develop fundamental and component level models, conduct experiments and generate data to support the use of mixed or enhanced working fluids for geothermal power generation applications.

  16. Santee-4-E Wholesale Power Rate Schedule | Department of Energy

    Office of Environmental Management (EM)

    4-E Wholesale Power Rate Schedule Santee-4-E Wholesale Power Rate Schedule Area: Santee-Cooper System: Georgia-Alabama-South Carolina This rate schedule shall be available to public bodies and cooperatives (any one of whom is hereinafter call the Customer) in South Carolina served through the transmission facilities of South Carolina Public Service Authority (hereinafter called the Authority). This rate schedule shall be applicable to the sale at wholesale of power and accompanying energy

  17. A History of the Southeastern Power Administration (1990 - 2010) |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy A History of the Southeastern Power Administration (1990 - 2010) A History of the Southeastern Power Administration (1990 - 2010) Southeastern Power Administration was established in 1950 by the Secretary of the Interior to carry out the functions assigned to the Secretary by the Flood Control Act of 1944. In 1977, Southeastern was transferred to the newly created United States Department of Energy. Southeastern, headquartered in Elberton, Georgia, is responsible for

  18. Intec Power Holdings Ltd | Open Energy Information

    Open Energy Info (EERE)

    NG6 0GA Sector: Buildings Product: String representation "Intec's "Silent ... control system." is too long. References: Intec Power Holdings Ltd1 This article is a stub. You...

  19. Utility-Scale Power Router: Dynamic Control of Grid Assets Using Direct AC Converter Cells

    SciTech Connect (OSTI)

    2010-09-01

    ADEPT Project: Georgia Tech is developing a cost-effective, utility-scale power router that uses an enhanced transformer to more efficiently direct power on the grid. Existing power routing technologies are too expensive for widespread use, but the ability to route grid power to match real-time demand and power outages would significantly reduce energy costs for utilities, municipalities, and consumers. Georgia Tech is adding a power converter to an existing grid transformer to better control power flows at about 1/10th the cost of existing power routing solutions. Transformers convert the high-voltage electricity that is transmitted through the grid into the low-voltage electricity that is used by homes and businesses. The added converter uses fewer steps to convert some types of power and eliminates unnecessary power storage, among other improvements. The enhanced transformer is more efficient, and it would still work even if the converter fails, ensuring grid reliability.

  20. Photoluminescence studies of individual and few GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Young, M. P.; Woodhead, C. S.; Roberts, J.; Noori, Y. J.; Noble, M. T.; Krier, A.; Hayne, M.; Young, R. J.; Smakman, E. P.; Koenraad, P. M.

    2014-11-15

    We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 ?eV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.

  1. Energy conserving site design case study: Shenandoah, Georgia. Final report

    SciTech Connect (OSTI)

    Not Available

    1980-01-01

    The case study examines the means by which energy conservation can be achieved at an aggregate community level by using proper planning and analytical techniques for a new town, Shenandoah, Georgia, located twenty-five miles southwest of Atlanta's Hartsfield International Airport. A potentially implementable energy conservation community plan is achieved by a study team examining the land use options, siting characteristics of each building type, alternate infrastructure plans, possible decentralized energy options, and central utility schemes to determine how community energy conservation can be achieved by use of pre-construction planning. The concept for the development of mixed land uses as a passively sited, energy conserving community is based on a plan (Level 1 Plan) that uses the natural site characteristics, maximizes on passive energy siting requirement, and allows flexibility for the changing needs of the developers. The Level 2 Plan is identical with Level 1 plan plus a series of decentraized systems that have been added to the residential units: the single-family detached, the apartments, and the townhouses. Level 3 Plan is similar to the Level 1 Plan except that higher density dwellings have been moved to areas adjacent to central site. The total energy savings for each plan relative to the conventional plan are indicated. (MCW)

  2. Georgia Natural Gas % of Total Residential Deliveries (Percent)

    Gasoline and Diesel Fuel Update (EIA)

    Foot) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2013 1,014 1,015 1,016 1,015 1,014 1,015 1,016 1,019 1,017 1,016 1,017 1,017 2014 1,018 1,018 1,018 1,018 1,021 1,022 1,023 1,023 1,027 1,026 1,026 1,025 2015 1,025 1,026 1,025 1,026 1,028 1,031 1,030 1,028 1,029 1,028 1,026 1,027 2016 1,029 1,030 1,030 1,028 1,030 1,027

    % of Total Residential Deliveries (Percent) Georgia Natural Gas % of Total Residential Deliveries (Percent) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5

  3. Georgia Natural Gas Pipeline and Distribution Use Price (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    Thousand Cubic Feet) Price (Dollars per Thousand Cubic Feet) Georgia Natural Gas Pipeline and Distribution Use Price (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1960's 0.19 0.19 0.19 1970's 0.20 0.22 0.23 0.25 0.28 0.32 0.36 0.67 0.90 1.35 1980's 2.10 2.78 3.11 3.22 3.26 3.23 3.32 2.50 2.41 2.69 1990's 2.19 2.08 2.08 2.24 2.14 1.93 2.62 3.09 2.48 2.18 2000's 3.30 4.57 NA -- -- -- - = No Data Reported; -- = Not Applicable; NA

  4. Ecological investigation of a hazardous waste site, Warner Robins, Georgia

    SciTech Connect (OSTI)

    Wade, M.C. ); Billig, P. )

    1993-01-01

    Zone 1, Robins Air Force Base, Georgia, has been designated a National Priorities List Site by the US Environmental Protection Agency. The Remedial Investigation for Zone 1 recommended a quantitative analysis of ecological risk. To accomplish this task a characterization of the bottomland hardwood forest ecosystem present on the base was required. This ecological characterization included the study of hydrology, aquatic and wildlife biology, and wetlands ecology where potential impacts were in question. In addition, a suitable reference area was studied. The hydrologic investigation consisted primarily of the installation of water level recorders and staff gauges, collection of surface water data, installation of piezometers and collection of groundwater data, and the collection of rainfall data. The aquatic biology investigation centered around the sampling of benthic macroinvertebrate communities, bioassay toxicity tests for surface water and sediment, fish sampling, aquatic macrophyte collection, macrophyte collection, and emergent and free-floating plant collection. The wildlife biology investigation focused on a breeding bird survey. The wetlands ecology investigation comprised the collection of soil and vegetation samples and using the Wetland Evaluation Technique (WET) to assess the functions and values of the wetlands present.

  5. Selective saturation of paramagnetic defects in electron- and neutron-irradiated GaAs

    SciTech Connect (OSTI)

    Goltzene, A.; Meyer, B.; Schwab, C.; Beall, R.B.; Newman, R.C.; Whitehouse, J.E.; Woodhead, J.

    1985-06-15

    A comparison of the electron paramagnetic resonance spectra obtained in fast neutron- and electron-irradiated GaAs crystals has confirmed the simultaneous presence of the quadruplet and singlet spectra, ascribed previously to As/sup 4 +//sub Ga/ and V/sup 2 -//sub Ga/ centers. Only in electron-irradiated material, however, are both signals separated by the selective microwave power saturation of the quadruplet. This apparent disparity is ascribed to a difference in the coupling between the two partners in the As/sup 4 +//sub Ga/-V/sup 2 -//sub Ga/ associated complexes.

  6. Ecological investigation of a hazardous waste site, Warner Robins, Georgia

    SciTech Connect (OSTI)

    Wade, M.; Billig, P.

    1993-05-01

    Landfill No. 4 and the sludge lagoon at Robins Air Force Base, Warner Robins, Georgia, were added to the United States Environmental Protection Agency (EPA) National Priorities List in 1987 because of highpotential for contaminant migration. Warner Robins is located approximately 90 miles southeast of Atlanta. In 1990 CH2M HILL conducted a Remedial Investigation at the base that recommended that further ecological assessment investigations be conducted (CH2M HILL 1990). The subject paper is the result of this recommendation. The ecological study was carried out by the Hazardous Waste Remedial Actions Program (HAZWRAP)Division of Martin Marietta Energy Systems, Inc., working jointly with its subcontractor CDM (CDM 1992a). The primary area of investigation (Zone 1) included the sludge lagoon, Landfill No. 4, the wetland area east of the landfill and west of Hannah Road (including two sewage treatment ponds), and the area between Hannah Road and Horse Creek (Fig. 1). The bottomland forest wetlands of Zone 1 extend from the landfill east to Horse Creek. Surface water and groundwater flow across Zone 1 is generally in an easterly direction toward Horse Creek. Horse Creek is a south-flowing tributary of the Ocmulgee River Floodplain. The objective of the study was to perform a quantitative analysis of ecological risk associated with the ecosystems present in Zone 1. This investigation was unique because the assessment was to be based upon many measurement endpoints resulting in both location-specific data and data that would assess the condition of the overall ecosystem. The study was segregated into five distinct field investigations: hydrology, surface water and sediment, aquatic biology, wetlands ecology, and wildlife biology.

  7. Enhanced sheet carrier densities in polarization controlled AlInN/AlN/GaN/InGaN field-effect transistor on Si (111)

    SciTech Connect (OSTI)

    Hennig, J. Dadgar, A.; Witte, H.; Bläsing, J.; Lesnik, A.; Strittmatter, A.; Krost, A.

    2015-07-15

    We report on GaN based field-effect transistor (FET) structures exhibiting sheet carrier densities of n = 2.9 10{sup 13} cm{sup −2} for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally x{sub In} = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices. Benchmarking the In{sub x}Ga{sub 1−x}N/GaN/AlN/Al{sub 0.87}In{sub 0.13}N based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of I{sub SD} = 1300 mA/mm (560 mA/mm). In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents.

  8. SCE&G-2-E Wholesale Power Rate Schedule | Department of Energy

    Office of Environmental Management (EM)

    2-E Wholesale Power Rate Schedule SCE&G-2-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina This rate schedule shall be available public bodies and cooperatives (any one of which is hereinafter called the Customer) in South Carolina to whom power may be wheeled pursuant to contracts between the Government and the South Carolina Electric & Gas Company (hereinafter called the Company). This rate schedule shall be applicable to the sale at wholesale of power

  9. Georgia System Operations Corporation Inc. Smart Grid Project...

    Open Energy Info (EERE)

    Power Quality Optimized Generator Operation Reduced Ancillary Service Cost Reduced Electricity Costs for Customers Reduced Greenhouse Gas and Criteria Pollutant Emissions Reduced...

  10. GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity

    SciTech Connect (OSTI)

    Liu, Dong; Sun, Huarui; Pomeroy, James W.; Kuball, Martin; Francis, Daniel; Faili, Firooz; Twitchen, Daniel J.

    2015-12-21

    The mechanical and thermo-mechanical integrity of GaN-on-diamond wafers used for ultra-high power microwave electronic devices was studied using a micro-pillar based in situ mechanical testing approach combined with an optical investigation of the stress and heat transfer across interfaces. We find the GaN/diamond interface to be thermo-mechanically stable, illustrating the potential for this material for reliable GaN electronic devices.

  11. Ultra High p-doping Material Research for GaN Based Light Emitters

    SciTech Connect (OSTI)

    Vladimir Dmitriev

    2007-06-30

    The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing

  12. U.S. Energy Information Administration (EIA) Indexed Site

    Georgia Georgia

  13. Sandia National Laboratories: Power Electronics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Power Electronics Sensors Power electronics is the application of solid-state electronics for routing, control, and conversion of electrical power. Custom Solutions Wide-Bandgap Wide-bandgap semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) have the potential to revolutionize the field of power electronics. Sandia National Laboratories is well-suited to understand both performance and reliability in wide-bandgap power electronics. Understanding Material Properties

  14. Improvement of reliability and power consumption for SnSb{sub 4} phase change film composited with Ga{sub 3}Sb{sub 7} by superlattice-like method

    SciTech Connect (OSTI)

    Hu, Yifeng; Zhai, Jiwei; Zeng, Huarong; Song, Sannian; Song, Zhitang

    2015-05-07

    Superlattice-like (SLL) SnSb{sub 4}/Ga{sub 3}Sb{sub 7} (SS/GS) thin films were investigated through in-situ film resistance measurement. The optical band gap was derived from the transmittance spectra by using a UV-visible-NIR (ultraviolet-visible-near infrared) spectrophotometer. Transmission electron microscopy was used to observe the micro-structure before and after annealing. Phase change memory cells based on the SLL [SS(3 nm)/GS(4.5 nm)]{sub 7} thin films were fabricated to test and verify the operation consumption and switching endurance. The scanning thermal microscopy was used to probe the nanoscale thermal property.

  15. Georgia Natural Gas Price Sold to Electric Power Consumers (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    Thousand Cubic Feet) Year Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 2002 3.16 2.97 3.50 3.86 4.07 3.68 3.40 3.48 3.84 4.47 4.10 5.07 2003 5.56 7.58 7.56 5.87 W 6.28 5.68 5.64 5.24 5.77 5.28 6.66 2004 6.66 5.83 W 6.27 7.03 7.25 6.78 6.10 5.53 6.44 7.46 7.77 2005 7.19 W 7.48 7.75 7.03 7.62 8.56 10.70 15.82 15.24 11.35 15.31 2006 11.62 8.50 7.85 7.75 6.76 7.04 7.17 8.40 5.48 5.50 7.60 7.90 2007 7.44 9.47 7.67 8.25 8.34 7.98 6.90 7.27 6.62 7.41 7.70 7.71 2008 9.84 9.54 13.67 12.10 13.55

  16. Georgia Natural Gas Price Sold to Electric Power Consumers (Dollars per

    U.S. Energy Information Administration (EIA) Indexed Site

    Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 2.72 3.21 2.57 2000's 4.31 3.36 3.73 5.87 6.57 10.63 7.36 7.54 10.40 4.70 2010's 5.21 4.72 3.40 4.45 4.98 3.27

  17. Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions

    SciTech Connect (OSTI)

    Piprek, Joachim

    2014-02-03

    This Letter investigates the efficiency enhancement achieved by tunnel junction insertion into the InGaN/GaN multi-quantum well (MQW) active region of blue light emitting diodes (LEDs). The peak quantum efficiency of such LED exceeds 100%, but the maximum wall-plug efficiency (WPE) hardly changes. However, due to the increased bias, the WPE peaks at much higher input power, i.e., the WPE droop is significantly delayed, and the output power is strongly enhanced. The main physical reason for this improvement lies in the non-uniform vertical carrier distribution typically observed within InGaN MQWs.

  18. GA SNC Solar | Open Energy Information

    Open Energy Info (EERE)

    GA-SNC Solar Place: Nevada Sector: Solar Product: Nevada-based PV project developer and joint venture of GA-Solar North America and Sierra Nevada Corp. References: GA-SNC...

  19. EA-1865: Department of Energy Loan Guarantee to Kior, Inc., for Biorefinery Facilities in Georgia, Mississippi, and Texas

    Broader source: Energy.gov [DOE]

    This EA will evaluate the environmental impacts of a proposal to issue a Federal loan guarantee to Kior, Inc., for biorefinery facilities in Georgia, Mississippi, and Texas. This EA is on hold.

  20. Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011

    SciTech Connect (OSTI)

    Not Available

    2011-05-01

    This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S Department of Energy Building America program Spring 2011 stakeholder meeting in Atlanta, Georgia.

  1. Microsoft Word - DOE-ID-14-043 Georgia Institute of Tech. _1 EC B3-6.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    3 SECTION A. Project Title: Optimizing Polymer-Grafted Amidoxime-based Adsorbents for Uranium Uptake from Seawater - Georgia Institute of Technology SECTION B. Project Description Georgia Institute of Technology will conduct laboratory scale research on metal ion adsorption from aqueous solutions to provide a better understanding of the performance of amidoxime-grafted polymer fibers in uranium uptake from seawater through experiments and modeling. The objectives of the proposed work are to: 1.

  2. Microsoft Word - DOE-ID-14-044 Georgia Institute of Tech_3 EC B3-6.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4 SECTION A. Project Title: Fundamental Study of Key Issues Related to Advanced S-CO2 Brayton Cycle: Prototypic HX Development and Cavitation - Georgia Institute of Technology SECTION B. Project Description Georgia Institute of Technology will perform research (integrated experimental, numerical and analytical work) that utilizes the existing facilities at the university to address the key scientific and operational issues pertinent to the compact heat exchanger systems and turbo-machinery. The

  3. Microsoft Word - DOE-ID-14-045 Georgia Institute of Tech. _2 EC B3-6.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    5 SECTION A. Project Title: Zeolite Membranes for Krypton/Xenon Separation from Spent Nuclear Fuel Reprocessing Off-Gas - Georgia Tech Research Corporation SECTION B. Project Description Georgia Tech Research Corporation will develop a novel, high-performance, low-energy intensity, lower-cost zeolite membrane process for Kr/Xe separation during spent nuclear fuel processing; and investigate the underlying molecular adsorption and transport processes in both 'idealized' and 'realistic' operating

  4. SCE&G-3-E Wholesale Power Rate Schedule | Department of Energy

    Office of Environmental Management (EM)

    3-E Wholesale Power Rate Schedule SCE&G-3-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina This rate schedule shall be available public bodies and cooperatives (any one of which is hereinafter called the Customer) in South Carolina to whom power may be scheduled pursuant to contracts between the Government and the South Carolina Electric & Gas Company (hereinafter called the Company). This rate schedule shall be applicable to the sale at wholesale of

  5. SCE&G-4-E Wholesale Power Rate Schedule | Department of Energy

    Office of Environmental Management (EM)

    4-E Wholesale Power Rate Schedule SCE&G-4-E Wholesale Power Rate Schedule Area: None System: Georgia-Alabama-South Carolina This rate schedule shall be available public bodies and cooperatives (any one of which is hereinafter called the Customer) in South Carolina served through the transmission facilities of South Carolina Electric & Gas Company (hereinafter called the Company). This rate schedule shall be applicable to the sale at wholesale of power and accompanying energy generated at

  6. RECONNAISSANCE ASSESSMENT OF CO2 SEQUESTRATION POTENTIAL IN THE TRIASSIC AGE RIFT BASIN TREND OF SOUTH CAROLINA, GEORGIA, AND NORTHERN FLORIDA

    SciTech Connect (OSTI)

    Blount, G.; Millings, M.

    2011-08-01

    A reconnaissance assessment of the carbon dioxide (CO{sub 2}) sequestration potential within the Triassic age rift trend sediments of South Carolina, Georgia and the northern Florida Rift trend was performed for the Office of Fossil Energy, National Energy Technology Laboratory (NETL). This rift trend also extends into eastern Alabama, and has been termed the South Georgia Rift by previous authors, but is termed the South Carolina, Georgia, northern Florida, and eastern Alabama Rift (SGFAR) trend in this report to better describe the extent of the trend. The objectives of the study were to: (1) integrate all pertinent geologic information (literature reviews, drilling logs, seismic data, etc.) to create an understanding of the structural aspects of the basin trend (basin trend location and configuration, and the thickness of the sedimentary rock fill), (2) estimate the rough CO{sub 2} storage capacity (using conservative inputs), and (3) assess the general viability of the basins as sites of large-scale CO{sub 2} sequestration (determine if additional studies are appropriate). The CO{sub 2} estimates for the trend include South Carolina, Georgia, and northern Florida only. The study determined that the basins within the SGFAR trend have sufficient sedimentary fill to have a large potential storage capacity for CO{sub 2}. The deeper basins appear to have sedimentary fill of over 15,000 feet. Much of this fill is likely to be alluvial and fluvial sedimentary rock with higher porosity and permeability. This report estimates an order of magnitude potential capacity of approximately 137 billion metric tons for supercritical CO{sub 2}. The pore space within the basins represent hundreds of years of potential storage for supercritical CO{sub 2} and CO{sub 2} stored in aqueous form. There are many sources of CO{sub 2} within the region that could use the trend for geologic storage. Thirty one coal fired power plants are located within 100 miles of the deepest portions of

  7. Method of plasma etching Ga-based compound semiconductors

    SciTech Connect (OSTI)

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  8. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  9. GaP/Si heterojunction Solar Cells

    SciTech Connect (OSTI)

    Saive, R.; Chen, C.; Emmer, H.; Atwater, H.

    2015-05-11

    Improving the efficiency of solar cells requires the introduction of novel device concepts. Recent developments have shown that in Si solar cell technology there is still room for tremendous improvement. Using the heterojunction with intrinsic thin layer (HIT) approach 25.6 % power conversion efficiency was achieved. However, a-Si as a window and passivation layer comes with disadvantages as a-Si shows low conductivity and high parasitic absorption. Therefore, it is likely that using a crystalline material as window layer with high band gab and high mobility can further improve efficiency. We have studied GaP grown by MOCVD on Si with (001) and (112) orientation. We obtained crystalline layers with carrier mobility around 100 cm2/Vs and which passivate Si as confirmed by carrier lifetime measurements. We performed band alignment studies by X-ray photoelectron spectroscopy yielding a valence band offset of 0.3 eV. Comparing this value with the Schottky-model leads to an interface dipole of 0.59 eV. The open circuit voltage increases with increasing doping and is consistent with the theoretical open circuit voltage deduced from work function difference and interface dipole. We obtain an open circuit voltage of 0.38 V for n-doped GaP with doping levels in the order of 10^17 1/cm^3. In our next steps we will increase the doping level further in order to gain higher open circuit voltage. We will discuss the implications of these findings for GaP/Si heterojunction solar cells.

  10. GaN Initiative for Grid Applications (GIGA)

    SciTech Connect (OSTI)

    Turner, George

    2015-07-03

    For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 μm, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and

  11. Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    SciTech Connect (OSTI)

    M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

    2005-01-26

    Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency ({eta}{sub TPV}) and a power density (PD) of {eta}{sub TPV} = 19% and PD=0.58 W/cm{sup 2} were measured for T{sub radiator} = 950 C and T{sub diode} = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be {eta}{sub TPV} = 26% and PD = 0.75 W/cm{sup 2}. These limits are extended to {eta}{sub TPV} = 30% and PD = 0.85W/cm{sup 2} if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of

  12. High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier

    SciTech Connect (OSTI)

    Petukhov, A. A., E-mail: andrey-rus29@rambler.ru; Zhurtanov, B. E.; Kalinina, K. V.; Stoyanov, N. D.; Salikhov, H. M.; Mikhailova, M. P.; Yakovlev, Yu. P. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)] [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

    2013-09-15

    The electroluminescent properties of an n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with a high potential barrier in the conduction band (large conduction-band offset) at the n-GaSb/n-InGaAsSb type-II heterointerface ({Delta}E{sub c} = 0.79 eV) are studied. Two bands with peaks at 0.28 and 0.64 eV at 300 K, associated with radiative recombination in n-InGaAsSb and n-GaSb, respectively, are observed in the electroluminescence (EL) spectrum. In the entire temperature range under study, T = 290-480 K, additional electron-hole pairs are formed in the n-InGaAsSb active region by impact ionization with hot electrons heated as a result of the conduction-band offset. These pairs contribute to radiative recombination, which leads to a nonlinear increase in the EL intensity and output optical power with increasing pump current. A superlinear increase in the emission power of the long-wavelength band is observed upon heating in the temperature range T = 290-345 K, and a linear increase is observed at T > 345 K. This work for the first time reports an increase in the emission power of a light-emitting diode structure with increasing temperature. It is shown that this rise is caused by a decrease in the threshold energy of the impact ionization due to narrowing of the band gap of the active region.

  13. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  14. High 400?C operation temperature blue spectrum concentration solar junction in GaInN/GaN

    SciTech Connect (OSTI)

    Zhao, Liang; Detchprohm, Theeradetch; Wetzel, Christian

    2014-12-15

    Transparent wide gap junctions suitable as high temperature, high flux topping cells have been achieved in GaInN/GaN by metal-organic vapor phase epitaxy. In structures of 25 quantum wells (QWs) under AM1.5G illumination, an open circuit voltage of 2.1?V is achieved. Of the photons absorbed in the limited spectral range of <450?nm, 64.2% are converted to electrons collected at the contacts under zero bias. At a fill factor of 45%, they account for a power conversion efficiency of38.6%. Under concentration, the maximum output power density per sun increases from 0.49?mW/cm{sup 2} to 0.51?mW/cm{sup 2} at 40?suns and then falls 0.42?mW/cm{sup 2} at 150?suns. Under external heating, a maximum of 0.59?mW/cm{sup 2} is reached at 250?C. Even at 400?C, the device is fully operational and exceeds room temperature performance. A defect analysis suggests that significantly higher fill factors and extension into longer wavelength ranges are possible with further development. The results prove GaInN/GaN QW solar junctions a viable and rugged topping cell for concentrator photovoltaics with minimal cooling requirements. By capturing the short range spectrum, they reduce the thermal load to any conventional cells stacked behind.

  15. Opportunities for Wide Bandgap Semiconductor Power Electronics...

    Broader source: Energy.gov (indexed) [DOE]

    Semiconductor Power Electronics for Hydrogen and Fuel Cell Applications" held on October 21, 2014. ... Vehicle Technologies Office Merit Review 2016: Advanced Low-Cost SiC and GaN Wide ...

  16. Photonic Power Systems Inc | Open Energy Information

    Open Energy Info (EERE)

    Zip: 95014-2305 Product: Provider of GaAs and InP-based solutions for delivering electrical power over fibre for numerous electronic applications. Coordinates: 37.31884,...

  17. Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

    SciTech Connect (OSTI)

    Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Aho, Timo; Raappana, Marianna; Guina, Mircea

    2015-09-28

    We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.

  18. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  19. ,"Georgia Natural Gas Industrial Price (Dollars per Thousand Cubic Feet)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Price (Dollars per Thousand Cubic Feet)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Industrial Price (Dollars per Thousand Cubic Feet)",1,"Monthly","6/2016" ,"Release Date:","8/31/2016" ,"Next Release Date:","9/30/2016" ,"Excel File

  20. ,"Georgia Natural Gas LNG Storage Net Withdrawals (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    LNG Storage Net Withdrawals (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas LNG Storage Net Withdrawals (MMcf)",1,"Annual",2014 ,"Release Date:","8/31/2016" ,"Next Release Date:","9/30/2016" ,"Excel File

  1. ,"Georgia Natural Gas Vehicle Fuel Consumption (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Vehicle Fuel Consumption (MMcf)" ,"Click worksheet name or tab at bottom for data" ,"Worksheet Name","Description","# Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Vehicle Fuel Consumption (MMcf)",1,"Monthly","6/2016" ,"Release Date:","8/31/2016" ,"Next Release Date:","9/30/2016" ,"Excel File

  2. Appearance Results from MiniBooNE Georgia Karagiorgi Columbia University

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Appearance Results from MiniBooNE Georgia Karagiorgi Columbia University WIN'11 - Cape Town, South Africa 2 Outline of this talk: -- The LSND excess signal: Evidence for high-Δm 2 oscillations -- The MiniBooNE experiment -- MiniBooNE neutrino mode oscillation results: LSND signature refuted -- MiniBooNE antineutrino mode oscillation results: LSND signature confrmed ? -- Light sterile neutrino oscillations: Where we stand today -- Future searches: MiniBooNE, MicroBooNE 1993 -1998 1998 2001

  3. Superfund at work: Hazardous waste cleanup efforts nationwide, Spring 1993 (Powersville site profile, Peach County, Georgia)

    SciTech Connect (OSTI)

    Not Available

    1993-01-01

    The US Environmental Protection Agency (EPA) encountered much more than a municipal landfill at the Powersville site in Peach County, Georgia. Contamination from improperly dumped hazardous wastes and pesticides tainted an old quarry used for household garbage. Chemicals migrating into area ground water threatened local drinking water supplies. To address these issues, EPA's Superfund program designed a cleanup strategy that included: negotiating with the county and chemical companies to contain the hazardous wastes on site underneath a protective cover; investigating reports of drinking water contamination and extending municipal water lines to affected residents; and conducting a tailored community relations program to inform and educate residents about the site.

  4. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  5. EA-1963: Elba Liquefaction Project; Chatham, Hart, Jefferson, and Effingham Counties, Georgia, and Jasper County, South Carolina

    Broader source: Energy.gov [DOE]

    Federal Energy Regulatory Commission (FERC) prepared an EA that assesses the potential environmental impacts of a proposal to add natural gas liquefaction and export capabilities at the existing Elba Liquefied Natural Gas Terminal near Savannah, Georgia. Information about this project is available on the FERC website (www.ferc.gov).

  6. Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells

    SciTech Connect (OSTI)

    Lin, Chien-Hung Lee, Chien-Ping

    2014-10-21

    High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 μm were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5 meV.

  7. Demonstration of a GaAs-based 1550-nm continuous wave photomixer

    SciTech Connect (OSTI)

    Zhang, W.-D. Brown, E. R.; Middendorf, J. R.

    2015-01-12

    An Er:GaAs-based 1550-nm CW photomixer is demonstrated. The related mechanism is extrinsic photoconductivity with optical absorption between the localized deep levels created by the Er and the extended states above the conduction band edge of GaAs. With the power boost made possible by a fiber-coupled erbium-doped-fiber amplifier, the Er:GaAs photomixers, operating at 1550 nm, radiate THz power levels easily measured by a Golay cell, and display a power spectrum having a −3 dB roll-off frequency of 307 GHz. This corresponds to a photocarrier lifetime of 520 fs, in good agreement with a previous measurement of the bandwidth of the same material in a photoconductive switch.

  8. Frequency-tunable continuous-wave terahertz sources based on GaAs plasmonic photomixers

    SciTech Connect (OSTI)

    Yang, Shang-Hua; Jarrahi, Mona

    2015-09-28

    We present frequency-tunable, continuous-wave terahertz sources based on GaAs plasmonic photomixers, which offer high terahertz radiation power levels at 50% radiation duty cycle. The use of plasmonic contact electrodes enhances photomixer quantum efficiency while maintaining its ultrafast operation by concentrating a large number of photocarriers in close proximity to the device contact electrodes. Additionally, the relatively high thermal conductivity and high resistivity of GaAs allow operation under high optical pump power levels and long duty cycles without reaching the thermal breakdown limit of the photomixer. We experimentally demonstrate continuous-wave terahertz radiation with a radiation frequency tuning range of more than 2 THz and a record-high radiation power of 17 μW at 1 THz through plasmonic photomixers fabricated on a low temperature grown GaAs substrate at 50% radiation duty cycle.

  9. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R.; Allerman, Andrew A.; Klem, John F.; Jones, Eric D.

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  10. Quaternary InGaAsSb Thermophotovoltaic Diodes

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  11. SREL Reprint #3188

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    School of Forestry and Natural Resources, University of Georgia, Athens, GA 30602, USA 2Department of Environmental Health Science, University of Georgia, Athens, GA 30602,...

  12. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  13. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  14. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the kp method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 . The joint density of states and optical absorption of a 40/40 GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  15. Georgia Hosts Multi-Agency Waste Isolation Pilot Plant Transportation Exercise

    Broader source: Energy.gov [DOE]

    COVINGTON, Ga. – Emergency personnel throughout the U.S. who respond in the event of a potential accident involving radioactive waste shipments take part in mock training scenarios to help them prepare for an actual incident.

  16. Second harmonic generation in photonic crystal cavities in (111)-oriented GaAs

    SciTech Connect (OSTI)

    Buckley, Sonia Radulaski, Marina; Vučković, Jelena; Biermann, Klaus

    2013-11-18

    We demonstrate second harmonic generation at telecommunications wavelengths in photonic crystal cavities in (111)-oriented GaAs. We fabricate 30 photonic crystal structures in both (111)- and (100)-oriented GaAs and observe an increase in generated second harmonic power in the (111) orientation, with the mean power increased by a factor of 3, although there is a large scatter in the measured values. We discuss possible reasons for this increase, in particular, the reduced two photon absorption for transverse electric modes in (111) orientation, as well as a potential increase due to improved mode overlap.

  17. Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity

    SciTech Connect (OSTI)

    Kalentyeva, I. L. Zvonkov, B. N.; Vikhrova, O. V.; Danilov, Yu. A.; Demina, P. B.; Dorokhin, M. V.; Zdoroveyshchev, A. V.

    2015-11-15

    InGaAs/GaAsSb/GaAs bilayer quantum-well structures containing a magnetic-impurity δ-layer (Mn) at the GaAs/InGaAs interface are experimentally studied for the first time. The structures are fabricated by metal organic chemical-vapor deposition (MOCVD) and laser deposition on substrates of conducting (n{sup +}) and semi-insulating GaAs in a single growth cycle. The InGaAs-layer thickness is varied from 1.5 to 5 nm. The significant effect of a decrease in the InGaAs quantum-well thickness on the optical and magnetotransport properties of the structures under study is detected. Nonlinear magnetic-field dependence of the Hall resistance and negative magnetoresistance at temperatures of ≤30–40 K, circular polarization of the electroluminescence in a magnetic field, opposite behaviors of the photoluminescence and electroluminescence emission intensities in the structures, and an increase in the contribution of indirect transitions with decreasing InGaAs thickness are observed. Simulation shows that these effects can be caused by the influence of the δ-layer of acceptor impurity (Mn) on the band structure and the hole concentration distribution in the bilayer quantum well.

  18. Georgia Natural Gas Delivered to Commercial Consumers for the Account of

    Gasoline and Diesel Fuel Update (EIA)

    Others (Million Cubic Feet) Delivered to Commercial Consumers for the Account of Others (Million Cubic Feet) Georgia Natural Gas Delivered to Commercial Consumers for the Account of Others (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1980's 1,067 3,418 5,176 1990's 5,721 6,395 6,389 5,487 4,304 3,663 3,646 6,211 9,078 16,996 2000's 48,726 40,531 38,395 39,611 44,025 42,112 38,204 38,967 41,555 43,845 2010's 49,157 46,512 42,971 46,494

  19. Georgia Natural Gas Imports Price All Countries (Dollars per Thousand Cubic

    U.S. Energy Information Administration (EIA) Indexed Site

    Feet) Price All Countries (Dollars per Thousand Cubic Feet) Georgia Natural Gas Imports Price All Countries (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's -- 2000's -- 1.92 3.51 5.12 6.47 9.18 7.03 6.79 9.71 3.73 2010's 4.39 4.20 2.78 3.36 4.33 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 8/31/2016 Next Release Date: 9/30/2016

  20. Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet)

    U.S. Energy Information Administration (EIA) Indexed Site

    Vehicle Fuel Price (Dollars per Thousand Cubic Feet) Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9 1990's 3.54 4.07 3.86 3.86 4.14 4.10 2000's -- -- 13.05 12.93 12.91 12.11 2010's 5.17 5.57 14.51 - = No Data Reported; -- = Not Applicable; NA = Not Available; W = Withheld to avoid disclosure of individual company data. Release Date: 8/31/2016 Next Release Date: 9/30/2016 Referring Pages:

  1. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Mingda; Song, Bo; Qi, Meng; Hu, Zongyang; Nomoto, Kazuki; Yan, Xiaodong; Cao, Yu; Johnson, Wayne; Kohn, Erhard; Jena, Debdeep; et al

    2015-02-16

    In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 mΩ · cm2), a low turn-on voltage (<0.7 V) and a high reverse breakdown voltage BV (>1.9 kV), were simultaneously achieved in devices with a 25 μm anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW·cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

  2. Electron heating due to microwave photoexcitation in the high mobility GaAs/AlGaAs two dimensional electron system

    SciTech Connect (OSTI)

    Ramanayaka, A. N.; Mani, R. G.; Wegscheider, W.

    2013-12-04

    We extract the electron temperature in the microwave photo-excited high mobility GaAs/AlGaAs two dimensional electron system (2DES) by studying the influence of microwave radiation on the amplitude of Shubnikov-de Haas oscillations (SdHOs) in a regime where the cyclotron frequency, ?{sub c}, and the microwave angular frequency, ?, satisfy 2? ? ?{sub c} ? 3.5? The results indicate that increasing the incident microwave power has a weak effect on the amplitude of the SdHOs and therefore the electron temperature, in comparison to the influence of modest temperature changes on the dark-specimen SdH effect. The results indicate negligible electron heating under modest microwave photo-excitation, in good agreement with theoretical predictions.

  3. Southeastern Power Administration 2012 Annual Report

    SciTech Connect (OSTI)

    2012-01-01

    Dear Secretary Moniz: I am pleased to submit Southeastern Power Administration’s (Southeastern) fiscal year (FY) 2012 Annual Report for your review. This report reflects our agency’s programs, accomplishments, operational, and financial activities for the 12-month period beginning October 1, 2011, and ending September 30, 2012. This past year, Southeastern marketed approximately 5.4 billion kilowatt-hours of energy to 487 wholesale customers in 10 southeastern states. Revenues from the sale of this power totaled about $263 million. With the financial assistance and support of Southeastern’s customers, funding for capitalized equipment purchases and replacements at hydroelectric facilities operated by the U.S. Army Corps of Engineers (Corps) continued in FY 2012. Currently, there are more than 214 customers participating in funding infrastructure renewal efforts of powerplants feeding the Georgia-Alabama-South Carolina, Kerr-Philpott, and Cumberland Systems. This funding, which totaled more than $71 million, provided much needed repairs and maintenance for aging projects in Southeastern’s marketing area. Drought conditions continued in the southeastern region of the United States this past year, particularly in the Savannah River Basin. Lack of rainfall strained our natural and financial resources. Power purchases for FY 2012 in the Georgia-Alabama-South Carolina System totaled approximately $29 million. About $8 million of this amount was for replacement power, which is purchased only during adverse water conditions in order to meet Southeastern’s customer contract requirements. Southeastern’s goal is to maximize the benefits of our region’s water resources. Competing uses of these resources will present another challenging year for Southeastern’s employees. With the cooperation and communication among the Department of Energy (DOE), preference customers, and Corps, I am certain Southeastern is positioned to meet these challenges in the future. We

  4. Degradation mechanisms of 2 MeV proton irradiated AlGaN/GaN HEMTs...

    Office of Scientific and Technical Information (OSTI)

    irradiated AlGaNGaN HEMTs This content will become publicly available on August 26, 2016 Title: Degradation mechanisms of 2 MeV proton irradiated AlGaNGaN HEMTs Authors: ...

  5. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  6. (In,Ga)As/GaP electrical injection quantum dot laser

    SciTech Connect (OSTI)

    Heidemann, M. Höfling, S.; Kamp, M.

    2014-01-06

    The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm{sup 2} at a heat-sink temperature of 80 K.

  7. Enhancement of minority carrier lifetime of GaInP with lateral composition modulation structure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Park, K. W.; Ravindran, Sooraj; Kang, S. J.; Hwang, H. Y.; Jho, Y. D.; Park, C. Y.; Jo, Y. R.; Kim, B. J.; Lee, Y. T.

    2014-07-28

    We report the enhancement of the minority carrier lifetime of GaInP with a lateral composition modulated (LCM) structure grown using molecular beam epitaxy (MBE). The structural and optical properties of the grown samples are studied by transmission electron microscopy and photoluminescence, which reveal the formation of vertically aligned bright and dark slabs corresponding to Ga-rich and In-rich GaInP regions, respectively, with good crystal quality. With the decrease of V/III ratio during LCM GaInP growth, it is seen that the band gap of LCM GaInP is reduced, while the PL intensity remains high and is comparable to that of bulk GaInP. We also investigate the minority carrier lifetime of LCM structures made with different flux ratios. It is found that the minority carrier lifetime of LCM GaInP is ?37 times larger than that of bulk GaInP material, due to the spatial separation of electrons and holes by In-rich and Ga-rich regions of the LCM GaInP, respectively. We further demonstrate that the minority carrier lifetime of the grown LCM GaInP structures can easily be tuned by simply adjusting the V/III flux ratio during MBE growth, providing a simple yet powerful technique to tailor the electrical and optical properties at will. The exceptionally high carrier lifetime and the reduced band gap of LCM GaInP make them a highly attractive candidate for forming the top cell of multi-junction solar cells and can enhance their efficiency, and also make them suitable for other optoelectronics devices, such as photodetectors, where longer carrier lifetime is beneficial.

  8. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  9. Low dimensional GaAs/air vertical microcavity lasers

    SciTech Connect (OSTI)

    Gessler, J.; Steinl, T.; Fischer, J.; Hfling, S.; Schneider, C.; Kamp, M.; Mika, A.; S?k, G.; Misiewicz, J.

    2014-02-24

    We report on the fabrication of gallium arsenide (GaAs)/air distributed Bragg reflector microresonators with indium gallium arsenide quantum wells. The structures are studied via momentum resolved photoluminescence spectroscopy which allows us to investigate a pronounced optical mode quantization of the photonic dispersion. We can extract a length parameter from these quantized states whose upper limit can be connected to the lateral physical extension of the microcavity via analytical calculations. Laser emission from our microcavity under optical pumping is observed in power dependent investigations.

  10. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  11. Georgia-Pacific Palatka Plant Uses Thermal Pinch Analysis and Evaluates Water Reduction in Plant-Wide Energy Assessment

    SciTech Connect (OSTI)

    2002-12-01

    This OIT BestPractices Case Study describes the methods and results used in a plant-wide assessment at a Georgia-Pacific paper mill in Palatka, FL. Assessment personnel recommended several projects, which, if implemented, have the potential to save the plant more than 729,000 MMBtu per year and $2.9 million per year. In addition, the plant could reduce water use by 2,100 gallons per minute.

  12. Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting Atlanta, Georgia - March 16-18, 2011 May 2011 ii NOTICE This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information,

  13. Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles

    SciTech Connect (OSTI)

    Iida, Daisuke; Fadil, Ahmed Ou, Yiyu; Kopylov, Oleksii; Ou, Haiyan; Chen, Yuntian; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

    2015-09-15

    We report internal quantum efficiency enhancement of thin p-GaN green quantum-well structure using self-assembled Ag nanoparticles. Temperature dependent photoluminescence measurements are conducted to determine the internal quantum efficiency. The impact of excitation power density on the enhancement factor is investigated. We obtain an internal quantum efficiency enhancement by a factor of 2.3 at 756 W/cm{sup 2}, and a factor of 8.1 at 1 W/cm{sup 2}. A Purcell enhancement up to a factor of 26 is estimated by fitting the experimental results to a theoretical model for the efficiency enhancement factor.

  14. A hole modulator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Kyaw, Zabu; Liu, Wei; Ji, Yun; Wang, Liancheng; Tan, Swee Tiam; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2015-02-09

    The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ?332?meV to ?294?meV at 80?A/cm{sup 2} and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs.

  15. AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

    SciTech Connect (OSTI)

    Watanabe, T.; Ohta, J.; Kondo, T.; Ohashi, M.; Ueno, K.; Kobayashi, A.; Fujioka, H.

    2014-05-05

    GaN films were grown on Si (110) substrates using a low-temperature growth technique based on pulsed sputtering. Reduction of the growth temperature suppressed the strain in the GaN films, leading to an increase in the critical thickness for crack formation. In addition, an AlGaN/GaN heterostructure with a flat heterointerface was prepared using this technique. Furthermore, the existence of a two dimensional electron gas at the heterointerface with a mobility of 1360 cm{sup 2}/Vs and a sheet carrier density of 1.3??10{sup 13}?cm{sup ?2} was confirmed. Finally, the use of the AlGaN/GaN heterostructure in a high electron mobility transistor was demonstrated. These results indicate that low-temperature growth via pulsed sputtering is quite promising for the fabrication of GaN-based electronic devices.

  16. Sec. Moniz to Georgia, Energy Department Scheduled to Close on Loan Guarantees to Construct New Nuclear Power Plant Reactors

    Broader source: Energy.gov [DOE]

    Project represents first new nuclear reactors to begin construction in the United States in three decades

  17. Molecular Beam Epitaxy on Gas Cluster Ion Beam Prepared GaSb Substrates: Towards Improved Surfaces and Interfaces

    SciTech Connect (OSTI)

    Krishnaswami, Kannan; Vangala, Shivashankar R.; Dauplaise, Helen; Allen, Lisa; Dallas, Gordon; Bakken, Daniel; Bliss, David; Goodhue, William

    2008-04-01

    A key problem in producing mid-infrared optoelectronic and low-power electronic devices in the GaSb material system is the lack of substrates with appropriate surfaces for epitaxial growth. Chemical mechanical polishing (CMP) of GaSb results in surface damage accompanied by tenacious oxides that do not easily desorb. To overcome this, we have developed a process using gas cluster ion beams (GCIB) to remove surface damage and produce engineered surface oxides. In this paper, we present surface modification results on GaSb substrates using O2-, CF4/O2-, and HBr-GCIB processes. X-ray photoelectron spectroscopy of GCIB produced surface layers showed the presence of mixed Ga- and Sb-oxides, with mostly Ga-oxides at the interface, desorbing at temperatures ranging 530°C to 560°C. Cross-sectional transmission electron microscopy of molecular beam epitaxy grown GaSb/AlGaSb layers showed that GCIB surfaces yielded smooth defect free substrate to epi transitions as compared to CMP surfaces. Furthermore, HBr-GCIB surfaces exhibited neither dislocation layers nor discernable interfaces, indicating complete oxide desorbtion prior to epigrowth on a clean single crystal template. Atomic force microscopy of GCIB epilayers exhibited smooth surfaces with characteristic step-terrace formations comprising monatomic steps and wide terraces. The HBr-GCIB process can be easily adapted to a large scale manufacturing process for epi-ready GaSb.

  18. Comparative study of polar and semipolar (112?2) InGaN layers grown by metalorganic vapour phase epitaxy

    SciTech Connect (OSTI)

    Dinh, Duc V. E-mail: peter.parbrook@tyndall.ie; Zubialevich, V. Z.; Oehler, F.; Kappers, M. J.; Humphreys, C. J.; Alam, S. N.; Parbrook, P. J. E-mail: peter.parbrook@tyndall.ie; Caliebe, M.; Scholtz, F.

    2014-10-21

    InGaN layers were grown simultaneously on (112?2) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature (?750C), the indium content (<15%) of the (112?2) and (0001) InGaN layers was similar. However, for temperatures less than 750C, the indium content of the (112?2) InGaN layers (15%26%) were generally lower than those with (0001) orientation (15%32%). The compositional deviation was attributed to the different strain relaxations between the (112?2) and (0001) InGaN layers. Room temperature photoluminescence measurements of the (112?2) InGaN layers showed an emission wavelength that shifts gradually from 380 nm to 580 nm with decreasing growth temperature (or increasing indium composition). The peak emission wavelength of the (112?2) InGaN layers with an indium content of more than 10% blue-shifted a constant value of ?(5060) nm when using higher excitation power densities. This blue-shift was attributed to band filling effects in the layers.

  19. EIS-0476: Vogtle Electric Generating Plant in Burke County, GA...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    6: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Vogtle Electric Generating Plant in Burke County, GA EIS-0476: Final Environmental Impact Statement EIS-0476: ...

  20. Carrier quenching in InGaP/GaAs double heterostructures

    SciTech Connect (OSTI)

    Wells, Nathan P. Driskell, Travis U.; Hudson, Andrew I.; LaLumondiere, Stephen D.; Lotshaw, William T.; Forbes, David V.; Hubbard, Seth M.

    2015-08-14

    Photoluminescence measurements on a series of GaAs double heterostructures demonstrate a rapid quenching of carriers in the GaAs layer at irradiance levels below 0.1 W/cm{sup 2} in samples with a GaAs-on-InGaP interface. These results indicate the existence of non-radiative defect centers at or near the GaAs-on-InGaP interface, consistent with previous reports showing the intermixing of In and P when free As impinges on the InGaP surface during growth. At low irradiance, these defect centers can lead to sub-ns carrier lifetimes. The defect centers involved in the rapid carrier quenching can be saturated at higher irradiance levels and allow carrier lifetimes to reach hundreds of nanoseconds. To our knowledge, this is the first report of a nearly three orders of magnitude decrease in carrier lifetime at low irradiance in a simple double heterostructure. Carrier quenching occurs at irradiance levels near the integrated Air Mass Zero (AM0) and Air Mass 1.5 (AM1.5) solar irradiance. Additionally, a lower energy photoluminescence band is observed both at room and cryogenic temperatures. The temperature and time dependence of the lower energy luminescence is consistent with the presence of an unintentional InGaAs or InGaAsP quantum well that forms due to compositional mixing at the GaAs-on-InGaP interface. Our results are of general interest to the photovoltaic community as InGaP is commonly used as a window layer in GaAs based solar cells.

  1. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J. Ota, Y.; Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y.

    2014-09-08

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  2. Oxidation of ultrathin GaSe

    SciTech Connect (OSTI)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  3. Oxidation of ultrathin GaSe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Thomas Edwin Beechem; McDonald, Anthony E.; Ohta, Taisuke; Howell, Stephen W.; Kalugin, Nikolai G.; Kowalski, Brian M.; Brumbach, Michael T.; Spataru, Catalin D.; Pask, Jesse A.

    2015-10-26

    Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga2Se3 and amorphous Se. Furthermore, photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.

  4. Pyrococcus Furiosus Genome Supplementary Data from the Adams Laboratory at the University of Georgia

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Adams, Michael W.W.; Weinberg, Michael V.; Schut, Gerrit J.; Brehm, Scott; Datta, Susmitta; Zhou, J.

    The research in the Adams Laboratory focuses on the physiology of hyperthermophilic organisms with an emphasis on metal-containing enzymes in the hyperthermophilic marine archaeon Pyrococcus furiosus. Three of the many articles from this University of Georgia lab have supplementary materials that are available on the Adams Lab website. All three sets of data are Open Reading Frames (ORFs) used for DNA microarray experiments and the changes in signal intensities. The full citations for the three articles are: 1) Weinberg, M. V., Schut, G. J., Brehm, S., Datta, S. and Adams, M. W. W. (2005) Cold shock of a hyperthermophilic archaeon: Pyrococcus furiosus exhibits multiple responses to a suboptimal growth temperature with a key role for membrane-bound glycoproteins. J Bacteriol. 187, 336-348; 2) Schut, G. J., Brehm, S. D., Datta, S. and Adams, M. W. W. (2003) "Whole genome DNA microarray analysis of a hyperthermophile and an archaeon: Pyrococcus furiosus grown on carbohydrates or peptides" J. Bacteriol. 185, 3935-3947; Schut, G. J., Zhou, J. and Adams, M. W. W. (2001) "DNA microarray analysis of the hyperthermophilic archaeon Pyrococcus furiosus evidence for a new type of sulfur-reducing enzyme" J. Bacteriol. 183, 7027-7036. Note that these articles are copyrighted by the Journal of Bacteriology.

  5. Health-hazard evaluation report HETA 86-469-2189, James River Corporation, Newnan, Georgia

    SciTech Connect (OSTI)

    Sinks, T.

    1992-03-01

    In response to a request from OSHA, a possible cancer cluster was investigated at the James River Corporation (SIC-2657), Newnan, Georgia. The paperboard packaging facility had been in operation for over 30 years. A retrospective cohort mortality study of 2050 workers employed at the facility between 1957 and 1988 was conducted. As of the study date, 141 workers were deceased, 1705 were alive, and 204 had been lost to follow-up. Overall mortality was similar to that expected as was mortality from diseases of the heart, accidents, and violence. The Standardized Mortality Ratios for all cancers was less than expected. Three workers with bladder cancer and six with kidney cancer were identified. No increased risk of bladder cancer was determined. The risk of kidney cancer was increased. The excess risk was associated with overall duration of employment but was not limited to any single department or work process. The author concludes that workers at the facility had an increased rate of kidney cancer. The author recommends measures to reduce exposures to inks containing pigments made from aromatic amines. Personal protective equipment should not be considered a substitute for adequate engineering controls. Follow-up on the cohort should continue.

  6. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Liu, Wei; Ju, Zhengang; Tan, Swee Tiam; Ji, Yun; Kyaw, Zabu; Zhang, Xueliang; Wang, Liancheng; Sun, Xiao Wei E-mail: VOLKAN@stanfordalumni.org; Demir, Hilmi Volkan E-mail: VOLKAN@stanfordalumni.org

    2014-07-21

    In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate the quantum confined Stark effect (QCSE), caused due to strong polarization induced electric field, through spatially confining electrons and holes in small recombination volumes. However, this inevitably increases the carrier density in quantum wells, which in turn aggravates the Auger recombination, since the Auger recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells with the InN composition linearly grading along the growth orientation in LED structures suppressing the Auger recombination and the QCSE simultaneously. Theoretically, the physical mechanisms behind the Auger recombination suppression are also revealed. The proposed LED structure has experimentally demonstrated significant improvement in optical output power and efficiency droop, proving to be an effective solution to this important problem of Auger recombination.

  7. High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy

    SciTech Connect (OSTI)

    McSkimming, Brian M. Speck, James S.; Chaix, Catherine

    2015-09-15

    In the present study, the authors report on a modified Riber radio frequency (RF) nitrogen plasma source that provides active nitrogen fluxes more than 30 times higher than those commonly used for plasma assisted molecular beam epitaxy (PAMBE) growth of gallium nitride (GaN) and thus a significantly higher growth rate than has been previously reported. GaN films were grown using N{sub 2} gas flow rates between 5 and 25 sccm while varying the plasma source's RF forward power from 200 to 600 W. The highest growth rate, and therefore the highest active nitrogen flux, achieved was ∼7.6 μm/h. For optimized growth conditions, the surfaces displayed a clear step-terrace structure with an average RMS roughness (3 × 3 μm) on the order of 1 nm. Secondary ion mass spectroscopy impurity analysis demonstrates oxygen and hydrogen incorporation of 1 × 10{sup 16} and ∼5 × 10{sup 17}, respectively. In addition, the authors have achieved PAMBE growth of GaN at a substrate temperature more than 150 °C greater than our standard Ga rich GaN growth regime and ∼100 °C greater than any previously reported PAMBE growth of GaN. This growth temperature corresponds to GaN decomposition in vacuum of more than 20 nm/min; a regime previously unattainable with conventional nitrogen plasma sources. Arrhenius analysis of the decomposition rate shows that samples with a flux ratio below stoichiometry have an activation energy greater than decomposition of GaN in vacuum while samples grown at or above stoichiometry have decreased activation energy. The activation energy of decomposition for GaN in vacuum was previously determined to be ∼3.1 eV. For a Ga/N flux ratio of ∼1.5, this activation energy was found to be ∼2.8 eV, while for a Ga/N flux ratio of ∼0.5, it was found to be ∼7.9 eV.

  8. A novel theoretical model for broadband blue InGaN/GaN superluminescent light emitting diodes

    SciTech Connect (OSTI)

    Moslehi Milani, N.; Mohadesi, V.; Asgari, A.

    2015-02-07

    A broadband superluminescent light emitting diode with In{sub 0.2}Ga{sub 0.8}N/GaN multiple quantum wells (MQWs) active region is investigated. The investigation is based on a theoretical model which includes the calculation of electronic states of the structure, rate equations, and the spectral radiation power. Two rate equations corresponding to MQW active region and separate confinement heterostructures layer are solved self-consistently with no-k selection wavelength dependent gain and quasi-Fermi level functions. Our results show that the superluminescence started in a current of ∼120 mA (∼7.5 kA/Cm{sup 2}) at 300 K. The range of peak emission wavelengths for different currents is 423–426 nm and the emission bandwidth is ∼5 nm in the superluminescence regime. A maximum light output power of 7.59 mW is obtained at 600 mA and the peak modal gain as a function of current indicates logarithmic behavior. Also, the comparison of our calculated results with published experimental data is shown to be in good agreement.

  9. Water Power

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stationary PowerEnergy Conversion EfficiencyWater Power Water Power Tara Camacho-Lopez 2016-06-01T22:32:54+00:00 Enabling a successful water power industry. Hydropower ...

  10. Zinc blende GaAs films grown on wurtzite GaN/sapphire templates

    SciTech Connect (OSTI)

    Chaldyshev, V.V.; Nielsen, B.; Mendez, E.E.; Musikhin, Yu.G.; Bert, N.A.; Ma, Zh.; Holden, Todd

    2005-03-28

    1-{mu}m-thick zinc-blende GaAs (111) films were grown by molecular-beam epitaxy on wurtzite GaN/sapphire (0001) templates. In spite of a {approx}20% lattice mismatch, epitaxial growth was realized, so that the GaAs films showed good adhesion and their surface had a larger mirror-like area with an average surface roughness of 10 nm. Transmission electron microscopy revealed a flat and abrupt epitaxial GaAs/GaN interface with some nanocavities and a large number of dislocations. Reasonably good crystalline quality of the GaAs films was confirmed by Raman characterization. Spectroscopic ellipsometry showed sharp interference fringes and characteristic parameters in the range of 0.75-5.3 eV. Photoluminescence study revealed extended band tails and dominance of non-radiative carrier recombination.

  11. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  12. Princeton Plasma Physics Lab - General Atomics (GA)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    general-atomics-ga General Atomics en The Scorpion's Strategy: "Catch and Subdue" http:www.pppl.govnode1132

  13. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash Biswas, Dhrubes

    2014-04-24

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  14. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  15. Magnetic coupling in ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers

    SciTech Connect (OSTI)

    Wang, M.; Wadley, P.; Campion, R. P.; Rushforth, A. W.; Edmonds, K. W.; Gallagher, B. L.; Charlton, T. R.; Kinane, C. J.; Langridge, S.

    2015-08-07

    We report on a study of ferromagnetic semiconductor (Ga,Mn)As/(Al,Ga,Mn)As bilayers using magnetometry and polarized neutron reflectivity (PNR). From depth-resolved characterization of the magnetic structure obtained by PNR, we concluded that the (Ga,Mn)As and (Al,Ga,Mn)As layers have in-plane and perpendicular-to-plane magnetic easy axes, respectively, with weak interlayer coupling. Therefore, the layer magnetizations align perpendicular to each other under low magnetic fields and parallel at high fields.

  16. Epitaxial two-dimensional nitrogen atomic sheet in GaAs

    SciTech Connect (OSTI)

    Harada, Yukihiro Yamamoto, Masuki; Baba, Takeshi; Kita, Takashi

    2014-01-27

    We have grown an epitaxial two-dimensional nitrogen (N) atomic sheet in GaAs by using the site-controlled N δ-doping technique. We observed a change of the electronic states in N δ-doped GaAs from the isolated impurity centers to the delocalized impurity band at 1.49 eV with increasing N-doping density. According to the excitation-power- and temperature-dependent photoluminescence (PL) spectra, the emission related to localized levels below the impurity band edge was dominant at low excitation power and temperature, whereas the effects of the localized levels can be neglected by increasing the excitation power and temperature. Furthermore, a clear Landau shift of the PL-peak energy was observed at several Tesla in the Faraday configuration, in contrast to the case in the impurity limit.

  17. Accelerated aging of GaAs concentrator solar cells

    SciTech Connect (OSTI)

    Gregory, P.E.

    1982-04-01

    An accelerated aging study of AlGaAs/GaAs solar cells has been completed. The purpose of the study was to identify the possible degradation mechanisms of AlGaAs/GaAs solar cells in terrestrial applications. Thermal storage tests and accelerated AlGaAs corrosion studies were performed to provide an experimental basis for a statistical analysis of the estimated lifetime. Results of this study suggest that a properly designed and fabricated AlGaAs/GaAs solar cell can be mechanically rugged and environmentally stable with projected lifetimes exceeding 100 years.

  18. Enhanced Thermoelectric Properties of Cu2ZnSnSe4 with Ga-doping

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Wei, Kaya; Beauchemin, Laura; Wang, Hsin; Porter, Wallace D.; Martin, Joshua; Nolas, George S.

    2015-08-10

    Gallium doped Cu2ZnSnSe4 quaternary chalcogenides with and without excess Cu were synthesized by elemental reaction and densified using hot pressing in order to investigate their high temperature thermoelectric properties. The resistivity, , and Seebeck coefficient, S, for these materials decrease with increased Ga-doping while both mobility and effective mass increase with Ga doping. The power factor (S2/ρ) therefore increases with Ga-doping. The highest thermoelectric figure of merit (ZT = 0.39 at 700 K) was obtained for the composition that had the lowest thermal conductivity. Our results suggest an approach to achieving optimized thermoelectric properties and are part of the continuingmore » effort to explore different quaternary chalcogenide compositions and structure types, as this class of materials continues to be of interest for thermoelectrics applications.« less

  19. Structural Model of the Basement in the Central Savannah River Area, South Carolina and Georgia

    SciTech Connect (OSTI)

    Stephenson, D. [Westinghouse Savannah River Company, AIKEN, SC (United States); Stieve, A.

    1992-03-01

    Interpretation of several generations of seismic reflection data and potential field data suggests the presence of several crustal blocks within the basement beneath the Coastal Plain in the Central Savannah River Area (CSRA). The seismic reflection and refraction data include a grid of profiles that capture shallow and deep reflection events and traverse the Savannah River Site and vicinity. Potential field data includes aeromagnetic, ground magnetic surveys, reconnaissance and detailed gravity surveys. Subsurface data from recovered core are used to constrain the model.Interpretation of these data characteristically indicate a southeast dipping basement surface with some minor highs and lows suggesting an erosional pre-Cretaceous unconformity. This surface is interrupted by several basement faults, most of which offset only early Cretaceous sedimentary horizons overlying the erosional surface. The oldest fault is perhaps late Paleozoic because it is truncated at the basement/Coastal Plain interface. This fault is related in timing and mechanism to the underlying Augusta fault. The youngest faults deform Coastal Plain sediments of at least Priabonian age (40-36.6 Ma). One of these young faults is the Pen Branch faults, identified as the southeast dipping master fault for the Triassic Dunbarton basin. All the Cenozoic faults are probably related in time and mechanism to the nearby, well studied Belair fault.The study area thus contains a set of structures evolved from the Alleghanian orogeny through Mesozoic extension to Cenozoic readjustment of the crust. There is a metamorphosed crystalline terrane with several reflector/fault packages, a reactivated Triassic basin, a mafic terrane separating the Dunbarton basin from the large South Georgia basin to the southeast, and an overprint of reverse faults, some reactivated, and some newly formed.

  20. Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction

    SciTech Connect (OSTI)

    Yeluri, Ramya Lu, Jing; Keller, Stacia; Mishra, Umesh K.; Hurni, Christophe A.; Browne, David A.; Speck, James S.; Chowdhury, Srabanti

    2015-05-04

    The Current Aperture Vertical Electron Transistor (CAVET) combines the high conductivity of the two dimensional electron gas channel at the AlGaN/GaN heterojunction with better field distribution offered by a vertical design. In this work, CAVETs with buried, conductive p-GaN layers as the current blocking layer are reported. The p-GaN layer was regrown by metalorganic chemical vapor deposition and the subsequent channel regrowth was done by ammonia molecular beam epitaxy to maintain the p-GaN conductivity. Transistors with high ON current (10.9?kA/cm{sup 2}) and low ON-resistance (0.4 m? cm{sup 2}) are demonstrated. Non-planar selective area regrowth is identified as the limiting factor to transistor breakdown, using planar and non-planar n/p/n structures. Planar n/p/n structures recorded an estimated electric field of 3.1 MV/cm, while non-planar structures showed a much lower breakdown voltage. Lowering the p-GaN regrowth temperature improved breakdown in the non-planar n/p/n structure. Combining high breakdown voltage with high current will enable GaN vertical transistors with high power densities.

  1. GaP ring-like nanostructures on GaAs (100) with In{sub 0.15}Ga{sub 0.85}As compensation layers

    SciTech Connect (OSTI)

    Prongjit, Patchareewan Pankaow, Naraporn Boonpeng, Poonyasiri Thainoi, Supachok Panyakeow, Somsak Ratanathammaphan, Somchai

    2013-12-04

    We present the fabrication of GaP ring-like nanostructures on GaAs (100) substrates with inserted In{sub 0.15}Ga{sub 0.85}As compensation layers. The samples are grown by droplet epitaxy using solid-source molecular beam epitaxy. The dependency of nanostructural and optical properties of GaP nanostructures on In{sub 0.15}Ga{sub 0.85}As layer thickness is investigated by ex-situ atomic force microscope (AFM) and photoluminescence (PL). It is found that the characteristics of GaP ring-like structures on GaAs strongly depend on the In{sub 0.15}Ga{sub 0.85}As layer thickness.

  2. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J.; Charache, G.W.

    1997-05-01

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  3. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  4. Effect of arsenic on the optical properties of GaSb-based type II quantum wells with quaternary GaInAsSb layers

    SciTech Connect (OSTI)

    Janiak, F. Motyka, M.; S?k, G.; Dyksik, M.; Ryczko, K.; Misiewicz, J.; Weih, R.; Hfling, S.; Kamp, M.; Patriarche, G.

    2013-12-14

    Optical properties of molecular beam epitaxially grown type II W shaped GaSb/AlSb/InAs/GaIn(As)Sb/InAs/AlSb/GaSb quantum wells (QWs) designed for the active region of interband cascade lasers have been investigated. Temperature dependence of Fourier-transformed photoluminescence and photoreflectance was employed to probe the effects of addition of arsenic into the original ternary valence band well of GaInSb. It is revealed that adding arsenic provides an additional degree of freedom in terms of band alignment and strain tailoring and allows enhancing the oscillator strength of the active type II transition. On the other hand, however, arsenic incorporation apparently also affects the structural and optical material quality via generating carrier trapping states at the interfaces, which can deteriorate the radiative efficiency. These have been evidenced in several spectroscopic features and are also confirmed by cross-sectional transmission electron microscopy images. While arsenic incorporation into type II QWs is a powerful heterostructure engineering tool for optoelectronic devices, a compromise has to be found between ideal band structure properties and high quality morphological properties.

  5. Perovskite Power

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Perovskite Power 1663 Los Alamos science and technology magazine Latest Issue:October 2015 past issues All Issues submit Perovskite Power A breakthrough in the production of...

  6. Water Power

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Water Power Sandia's 117-scale WEC device with being tested in the maneuvering and ... EC, News, Renewable Energy, Water Power Sandia National Laboratories Uses Its Wave Energy ...

  7. Transportation of foreign-owned enriched uranium from the Republic of Georgia. Environmental assessment for Project Partnership

    SciTech Connect (OSTI)

    1998-03-31

    The Department of Energy (DOE) Office of Nonproliferation and National Security (NN) has prepared a classified environmental assessment to evaluate the potential environmental impact for the transportation of 5.26 kilograms of enriched uranium-235 in the form of nuclear fuel, from the Republic of Georgia to the United Kingdom. The nuclear fuel consists of primarily fresh fuel, but also consists of a small quantity (less than 1 kilogram) of partially-spent fuel. Transportation of the enriched uranium fuel would occur via US Air Force military aircraft under the control of the Defense Department European Command (EUCOM). Actions taken in a sovereign nation (such as the Republic of Georgia and the United Kingdom) are not subject to analysis in the environmental assessment. However, because the action would involve the global commons of the Black Sea and the North Sea, the potential impact to the global commons has been analyzed. Because of the similarities in the two actions, the Project Sapphire Environmental Assessment was used as a basis for assessing the potential impacts of Project Partnership. However, because Project Partnership involves a small quantity of partially-spent fuel, additional analysis was conducted to assess the potential environmental impacts and to consider reasonable alternatives as required by NEPA. The Project Partnership Environmental Assessment found the potential environmental impacts to be well below those from Project Sapphire.

  8. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, G.M.; Baca, A.G.; Zutavern, F.J.

    1998-09-08

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device is disclosed. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices. 5 figs.

  9. GaAs photoconductive semiconductor switch

    DOE Patents [OSTI]

    Loubriel, Guillermo M.; Baca, Albert G.; Zutavern, Fred J.

    1998-01-01

    A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

  10. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  11. Concentrating Solar Power: Power Towers

    Office of Energy Efficiency and Renewable Energy (EERE)

    This video provides an overview of the principles, applications, and benefits of generating electricity using power towers, a concentrating solar power (CSP) technology. A brief animation explains...

  12. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  13. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  14. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore » to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  15. Structural and optical properties of InGaN--GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Hofling, S.; Worschech, L.; Grutzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, μ-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  16. Structural and optical properties of InGaNGaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmoreto higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.less

  17. Public health assessment for Southwire Company and Southwire Company Copper Division, Carrollton, Carroll County, Georgia, Region 4: CERCLIS Number GAD003264421 and CERCLIS Number GAD000814541. Final report

    SciTech Connect (OSTI)

    1998-09-22

    The Southwire Company`s manufacturing divisions are located in Carroll County, Georgia, within the southeastern city limits of Carrollton. ATSDR identified contaminants, predominantly metals, in on-site soil, groundwater, surface water, sediment, fish and slag/waste material. On-site groundwater samples collected in 1984 indicated the presence of trichloroethylene (TCE).

  18. Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

    SciTech Connect (OSTI)

    Lekhal, K.; Damilano, B. De Mierry, P.; Venngus, P.; Ngo, H. T.; Rosales, D.; Gil, B.; Hussain, S.

    2015-04-06

    Yellow/amber (570600?nm) emitting In{sub x}Ga{sub 1?x}N/Al{sub y}Ga{sub 1?y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1?x}N QWs by the Al{sub y}Ga{sub 1?y}N layers, respectively.

  19. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M.; Giddings, A. D.; Prosa, T. J.; Larson, D. J.; Mano, T.

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  20. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8??10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  1. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgl Okur; Akdemir, Hande Gnay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  2. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Hajłasz, M.; Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S.; Gravesteijn, D. J.; Rietveld, F. J. R.; Schmitz, J.

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  3. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  4. Energy harvesting using martensite variant reorientation mechanism in a NiMnGa magnetic shape memory alloy

    SciTech Connect (OSTI)

    Karaman, I.; Basaran, B.; Karaca, H. E.; Karsilayan, A. I.; Chumlyakov, Y. I.

    2007-04-23

    Magnetic shape memory alloys demonstrate significant potential for harvesting waste mechanical energy utilizing the Villari effect. In this study, a few milliwatts of power output are achieved taking advantage of martensite variant reorientation mechanism in Ni{sub 51.1}Mn{sub 24}Ga{sub 24.9} single crystals under slowly fluctuating loads (10 Hz) without optimization in the power conversion unit. Effects of applied strain range, bias magnetic field, and loading frequency on the voltage output are revealed. Anticipated power outputs under moderate frequencies are predicted showing that the power outputs higher than 1 W are feasible.

  5. Understanding cirrus ice crystal number variability for different...

    Office of Scientific and Technical Information (OSTI)

    Georgia Inst. of Technology, Atlanta, GA (United States) Univ. of Los Andes, Bogota (Colombia) NASA Goddard Space Flight Center (GSFC), Greenbelt, MD (United States) Georgia Inst. ...

  6. SREL Reprint #3172

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    School of Forestry and Natural Resources, University of Georgia, Athens, GA 30602, USA 2Savannah River Ecology Laboratory, University of Georgia, Drawer E, Aiken, SC 29802,...

  7. SREL Reprint #3120

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1Department of Environmental Health Science, University of Georgia, Athens, GA 30602, USA 2Savannah River Ecology Laboratory, University of Georgia, Drawer E, Aiken, SC 29802,...

  8. Carbohydrate and lignin are simultaneously solubilized from unpretreat...

    Office of Scientific and Technical Information (OSTI)

    University of Georgia, Athens, GA Georgia Institute of Technology ORNL North Carolina State University National Renewable Energy Laboratory (NREL) National Energy Renewable ...

  9. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  10. Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition

    SciTech Connect (OSTI)

    Zhang, Yachao; Zhou, Xiaowei; Xu, Shengrui; Wang, Zhizhe; Chen, Zhibin; Zhang, Jinfeng; Zhang, Jincheng E-mail: xd-zhangyachao@163.com; Hao, Yue E-mail: xd-zhangyachao@163.com

    2015-12-15

    Pulsed metal organic chemical vapor deposition (P-MOCVD) is introduced into the growth of high quality InGaN channel heterostructures. The effects of InGaN channel growth temperature on the structural and transport properties of the heterostructures are investigated in detail. High resolution x-ray diffraction (HRXRD) and Photoluminescence (PL) spectra indicate that the quality of InGaN channel strongly depends on the growth temperature. Meanwhile, the atomic force microscopy (AFM) results show that the interface morphology between the InGaN channel and the barrier layer also relies on the growth temperature. Since the variation of material properties of InGaN channel has a significant influence on the electrical properties of InAlN/InGaN heterostructures, the optimal transport properties can be achieved by adjusting the growth temperature. A very high two dimension electron gas (2DEG) density of 1.92 × 10{sup 13} cm{sup −2} and Hall electron mobility of 1025 cm{sup 2}/(V⋅s) at room temperature are obtained at the optimal growth temperature around 740 °C. The excellent transport properties in our work indicate that the heterostructure with InGaN channel is a promising candidate for the microwave power devices, and the results in this paper will be instructive for further study of the InGaN channel heterostructures.

  11. GaN-Ready Aluminum Nitride Substrates for Cost-Effective, Very Low Dislocation Density III-Nitride LED's

    SciTech Connect (OSTI)

    Sandra Schujman; Leo Schowalter

    2010-10-15

    The objective of this project was to develop and then demonstrate the efficacy of a costeffective approach for a low defect density substrate on which AlInGaN LEDs can be fabricated. The efficacy of this GaN-ready substrate would then be tested by growing high efficiency, long lifetime InxGa1-xN blue LEDs. The approach used to meet the project objectives was to start with low dislocation density AlN single-crystal substrates and grow graded AlxGa1-xN layers on top. Pseudomorphic AlxGa1-xN epitaxial layers grown on bulk AlN substrates were used to fabricate light emitting diodes and demonstrate better device performance as a result of the low defect density in these layers when benched marked against state-of-the-art LEDs fabricated on sapphire substrates. The pseudomorphic LEDs showed excellent output powers compared to similar wavelength devices grown on sapphire substrates, with lifetimes exceeding 10,000 hours (which was the longest time that could reliably be estimated). In addition, high internal quantum efficiencies were demonstrated at high driving current densities even though the external quantum efficiencies were low due to poor photon extraction. Unfortunately, these pseudomorphic LEDs require high Al content so they emit in the ultraviolet. Sapphire based LEDs typically have threading dislocation densities (TDD) > 108 cm-2 while the pseudomorphic LEDs have TDD ? 105 cm-2. The resulting TDD, when grading the AlxGa1-xN layer all the way to pure GaN to produce a GaN-ready substrate, has varied between the mid 108 down to the 106 cm-2. These inconsistencies are not well understood. Finally, an approach to improve the LED structures on AlN substrates for light extraction efficiency was developed by thinning and roughening the substrate.

  12. Stationary Power

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Stationary Power - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Energy Defense Waste Management Programs Advanced Nuclear

  13. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  14. Stress-induced piezoelectric field in GaN-based 450-nm light-emitting diodes

    SciTech Connect (OSTI)

    Tawfik, Wael Z.; Hyeon, Gil Yong; Lee, June Key

    2014-10-28

    We investigated the influence of the built-in piezoelectric field induced by compressive stress on the characteristics of GaN-based 450-nm light-emitting diodes (LEDs) prepared on sapphire substrates of different thicknesses. As the sapphire substrate thickness was reduced, the compressive stress in the GaN layer was released, resulting in wafer bowing. The wafer bowing-induced mechanical stress altered the piezoelectric field, which in turn reduced the quantum confined Stark effect in the InGaN/GaN active region of the LED. The flat-band voltage was estimated by measuring the applied bias voltage that induced a 180° phase shift in the electro-reflectance (ER) spectrum. The piezoelectric field estimated by the ER spectra changed by ∼110 kV/cm. The electroluminescence spectral peak wavelength was blue-shifted, and the internal quantum efficiency was improved by about 22% at a high injection current of 100 mA. The LED on the 60-μm-thick sapphire substrate exhibited the highest light output power of ∼59 mW at an injection current of 100 mA, with the operating voltage unchanged.

  15. Enhanced charge recombination due to surfaces and twin defects in GaAs nanostructures

    SciTech Connect (OSTI)

    Brown, Evan; Sheng, Chunyang; Nakano, Aiichiro; Shimamura, Kohei; Shimojo, Fuyuki

    2015-02-07

    Power conversion efficiency of gallium arsenide (GaAs) nanowire (NW) solar cells is severely limited by enhanced charge recombination (CR) at sidewall surfaces, but its atomistic mechanisms are not well understood. In addition, GaAs NWs usually contain a high density of twin defects that form a twin superlattice, but its effects on CR dynamics are largely unknown. Here, quantum molecular dynamics (QMD) simulations reveal the existence of an intrinsic type-II heterostructure at the (110) GaAs surface. Nonadiabatic quantum molecular dynamics (NAQMD) simulations show that the resulting staggered band alignment causes a photoexcited electron in the bulk to rapidly transfer to the surface. We have found orders-of-magnitude enhancement of the CR rate at the surface compared with the bulk value. Furthermore, QMD and NAQMD simulations show unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective CR centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and provides microscopic understanding of the underlying CR processes.

  16. Power supply

    DOE Patents [OSTI]

    Yakymyshyn, Christopher Paul; Hamilton, Pamela Jane; Brubaker, Michael Allen

    2007-12-04

    A modular, low weight impedance dropping power supply with battery backup is disclosed that can be connected to a high voltage AC source and provide electrical power at a lower voltage. The design can be scaled over a wide range of input voltages and over a wide range of output voltages and delivered power.

  17. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  18. WATER POWER SOLAR POWER WIND POWER

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    get curren WATER POWER SOLAR POWER WIND POWER Be part of the Clean Energy Generation! YOUR HOUSE BIOMASS ENERGY GEOTHERMAL ENERGY Clean energy can come from the sun. 2 The energy in wind can make electricity. We can make energy with moving water. Bioenergy comes from plants we can turn into fuel. Logs Wood Chips Straw Corn Switchgrass We can use energy from the earth to heat and cool our homes. Check out these cool websites to learn more about clean energy! Energy Information Administration

  19. Table 3. Top five retailers of electricity, with end use sectors, 2014

    U.S. Energy Information Administration (EIA) Indexed Site

    Georgia" "megawatthours" ,"Entity","Type of provider","All sectors","Residential","Commercial","Industrial","Transportation" 1,"Georgia Power Co","Investor-Owned",83740365,27132065,32894391,23548775,165134 2,"Jackson Electric Member Corp - (GA)","Cooperative",5201199,3003210,1476773,721216,0 3,"Cobb Electric Membership

  20. Solar Power

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Power Solar Power Project Opportunities Abound in the Region The WIPP site is receives abundant solar energy with 6-7 kWh/sq meter power production potential As the accompanying map of New Mexico shows, the WIPP site enjoys abundant year-round sunshine. With an average solar power production potential of 6-7 kWh/sq meter per day, one exciting project being studied for location at WIPP is a 30-50 MW Solar Power Tower: The American Solar Energy Society (ASES) is is a national trade

  1. InGaAs monolithic interconnected modules (MIM)

    SciTech Connect (OSTI)

    Fatemi, N.S.; Jenkins, P.P.; Weizer, V.G.; Hoffman, R.W. Jr.; Wilt, D.M.; Scheiman, D.; Brinker, D.; Murray, C.S.; Riley, D.

    1997-12-31

    A monolithic interconnected module (MIM) structure has been developed for thermophotovoltaic (TPV) applications. The MIM device consists of many individual InGaAs cells series-connected on a single semi-insulating (S.I.) InP substrate. An infrared (IR) back surface reflector (BSR), placed on the rear surface of the substrate, returns the unused portion of the TPV radiator output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Also, the use of a BSR obviates the need to use a separate filtering element. As a result, MIMs are exposed to the entire emitter output, thereby maximizing output power density. MIMs with an active area of 1 x 1-cm were comprised of 15 cells monolithically connected in series. Both lattice-matched and lattice-mismatched InGaAs/InP devices were produced, with bandgaps of 0.74 and 0.55 eV, respectively. The 0.74-eV modules demonstrated an open-circuit voltage (Voc) of 6.158 V and a fill factor of 74.2% at a short-circuit current (Jsc) of 842 mA/cm{sup 2}, under flashlamp testing. The 0.55-eV modules demonstrated a Voc of 4.849 V and a fill factor of 57.8% at a Jsc of 3.87 A/cm{sup 2}. IR reflectance measurements (i.e., {lambda} > 2 {micro}m) of these devices indicated a reflectivity of {ge} 83%. Latest electrical and optical performance results for the MIMs will be presented.

  2. Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ahn, Shihyun; Zhu, Weidi; Dong, Chen; Le, Lingcong; Hwang, Ya-Hsi; Kim, Byung-Jae; Ren, Fan; Pearton, Stephen J.; Lind, Aaron G.; Jones, Kevin S.; et al

    2015-04-21

    Here we studied the effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs). AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm₋2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersionmore » observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.« less

  3. Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (2021) substrates

    SciTech Connect (OSTI)

    Sawicka, M.; Grzanka, S.; Skierbiszewski, C.; Turski, H.; Muziol, G.; Krysko, M.; Grzanka, E.; Sochacki, T.; Siekacz, M.; Kucharski, R.

    2013-03-18

    Multi-quantum well (MQW) structures and light emitting diodes (LEDs) were grown on semipolar (2021) and polar (0001) GaN substrates by plasma-assisted molecular beam epitaxy. The In incorporation efficiency was found to be significantly lower for the semipolar plane as compared to the polar one. The semipolar MQWs exhibit a smooth surface morphology, abrupt interfaces, and a high photoluminescence intensity. The electroluminescence of semipolar (2021) and polar (0001) LEDs fabricated in the same growth run peaks at 387 and 462 nm, respectively. Semipolar LEDs with additional (Al,Ga)N cladding layers exhibit a higher optical output power but simultaneously a higher turn-on voltage.

  4. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper; Reedy, Robert

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  5. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  6. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Ars, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  7. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  8. Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

    SciTech Connect (OSTI)

    Mohan, Nagaboopathy; Raghavan, Srinivasan; Manikant,; Soman, Rohith

    2015-10-07

    AlGaN/GaN high electron mobility transistor stacks deposited on a single growth platform are used to compare the most common transition, AlN to GaN, schemes used for integrating GaN with Si. The efficiency of these transitions based on linearly graded, step graded, interlayer, and superlattice schemes on dislocation density reduction, stress management, surface roughness, and eventually mobility of the 2D-gas are evaluated. In a 500 nm GaN probe layer deposited, all of these transitions result in total transmission electron microscopy measured dislocations densities of 1 to 3 × 10{sup 9}/cm{sup 2} and <1 nm surface roughness. The 2-D electron gas channels formed at an AlGaN-1 nm AlN/GaN interface deposited on this GaN probe layer all have mobilities of 1600–1900 cm{sup 2}/V s at a carrier concentration of 0.7–0.9 × 10{sup 13}/cm{sup 2}. Compressive stress and changes in composition in GaN rich regions of the AlN-GaN transition are the most effective at reducing dislocation density. Amongst all the transitions studied the step graded transition is the one that helps to implement this feature of GaN integration in the simplest and most consistent manner.

  9. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  10. High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

    SciTech Connect (OSTI)

    Soltani, A. Rousseau, M.; Gerbedoen, J.-C.; Bourzgui, N.; Mattalah, M.; Bonanno, P. L.; Ougazzaden, A.; Telia, A.; Patriarche, G.; BenMoussa, A.

    2014-06-09

    High performance titanium nitride sub-100 nm rectifying contact, deposited by sputtering on AlGaN/GaN high electron mobility transistors, shows a reverse leakage current as low as 38 pA/mm at V{sub GS} = −40 V and a Schottky barrier height of 0.95 eV. Based on structural characterization and 3D simulations, it is found that the polarization gradient induced by the gate metallization forms a P-type pseudo-doping region under the gate between the tensile surface and the compressively strained bulk AlGaN barrier layer. The strain induced by the gate metallization can compensate for the piezoelectric component. As a result, the gate contact can operate at temperatures as high as 700 °C and can withstand a large reverse bias of up to −100 V, which is interesting for high-performance transistors dedicated to power applications.

  11. Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes

    SciTech Connect (OSTI)

    Al tahtamouni, T. M.; Lin, J. Y.; Jiang, H. X.

    2014-04-15

    Mg-doped AlN/AlGaN superlattice (Mg-SL) and Mg-doped AlGaN epilayers have been investigated in the 284 nm deep ultraviolet (DUV) light emitting diodes (LEDs) as electron blocking layers. It was found that the use of Mg-SL improved the material quality of the p-GaN contact layer, as evidenced in the decreased density of surface pits and improved surface morphology and crystalline quality. The performance of the DUV LEDs fabricated using Mg-SL was significantly improved, as manifested by enhanced light intensity and output power, and reduced turn-on voltage. The improved performance is attributed to the enhanced blocking of electron overflow, and enhanced hole injection.

  12. Southeastern Power Administration 2011 Annual Report

    SciTech Connect (OSTI)

    2011-12-31

    Dear Secretary Chu: I am pleased to submit Southeastern Power Administration’s (Southeastern) fiscal year (FY) 2011 Annual Report for your review. This report reflects our agency’s programs, accomplishments, operational, and financial activities for the 12-month period beginning October 1, 2010, and ending September 31, 2011. This past year, Southeastern marketed approximately 6.2 billion kilowatt-hours of energy to 489 wholesale customers in 10 southeastern states. Revenues from the sale of this power totaled more than $264 million. With the financial assistance and support of Southeastern’s customers, funding for capitalized equipment purchases and replacements at hydroelectric facilities operated by the U.S. Army Corps of Engineers (Corps) continued in FY 2011. This funding, which totaled more than $45 million, provided much needed repairs and maintenance for aging projects in Southeastern’s marketing area. Currently, there are more than 214 customers participating in the funding efforts in the Georgia-Alabama-South Carolina, Kerr-Philpott, and Cumberland Systems of projects. Drought conditions continued in the southeastern region of the United States this past year, particularly in the Savannah River Basin. Lack of rain placed strains on our natural and financial resources. Power purchases for FY 2011 totaled approximately $38 million. About $9 million of this amount was for replacement power, which is purchased only during adverse water conditions in order to meet Southeastern’s customer contract requirements. Southeastern’s goal is to maximize the benefits of our region’s water resources. Competing uses of these resources will present another challenging year for Southeastern’s employees. With the cooperation and communication among the Department of Energy (DOE), preference customers, and Corps, I am certain Southeastern is positioned to meet these challenges in the future. We are committed to providing reliable hydroelectric power to

  13. Raman spectroscopy of InGaAs/GaAs nanoheterostructures δ-doped with Mn

    SciTech Connect (OSTI)

    Plankina, S. M.; Vikhrova, O. V.; Danilov, Yu. A.; Zvonkov, B. N.; Kalentyeva, I. L.; Nezhdanov, A. V.; Chunin, I. I.; Yunin, P. A.

    2015-01-15

    The results of complex studies of InGaAs/GaAs nanoheterostructures δ-doped with Mn are reported. The structures are grown by metal-organic vapor-phase epitaxy in combination with laser deposition. By confocal Raman spectroscopy, it is shown that the low-temperature δ-doped GaAs cap layers are of higher crystal quality compared to uniformly doped layers. Scattering of light in the coupled phonon-plasmon mode is observed. The appearance of this mode is conditioned by the diffusion of manganese from the δ-layer. The thickness of the cap layer is found to be d{sub c} ≈ 9–20 nm, optimal for attainment of the highest photoluminescence intensity of the quantum well and the highest layer concentration of holes by doping with manganese.

  14. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  15. Electrical compensation by Ga vacancies in Ga{sub 2}O{sub 3} thin films

    SciTech Connect (OSTI)

    Korhonen, E.; Tuomisto, F.; Gogova, D.; Wagner, G.; Baldini, M.; Galazka, Z.; Schewski, R.; Albrecht, M.

    2015-06-15

    The authors have applied positron annihilation spectroscopy to study the vacancy defects in undoped and Si-doped Ga{sub 2}O{sub 3} thin films. The results show that Ga vacancies are formed efficiently during metal-organic vapor phase epitaxy growth of Ga{sub 2}O{sub 3} thin films. Their concentrations are high enough to fully account for the electrical compensation of Si doping. This is in clear contrast to another n-type transparent semiconducting oxide In{sub 2}O{sub 3}, where recent results show that n-type conductivity is not limited by cation vacancies but by other intrinsic defects such as O{sub i}.

  16. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli; Wang, Jianfeng; Ren, Guoqiang; Xu, Ke

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local IV results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  17. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  18. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  19. Analysis of defects in GaAsN grown by chemical beam epitaxy on high index GaAs substrates

    SciTech Connect (OSTI)

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-09-27

    The lattice defects in GaAsN grown by chemical beam epitaxy on GaAs 311B and GaAs 10A toward [110] were characterized and discussed by using deep level transient spectroscopy (DLTS) and on the basis of temperature dependence of the junction capacitances (C{sub J}). In one hand, GaAsN films grown on GaAs 311B and GaAs 10A showed n-type and p-type conductivities, respectively although the similar and simultaneous growth conditions. This result is indeed in contrast to the common known effect of N concentration on the type of conductivity, since the surface 311B showed a significant improvement in the incorporation of N. Furthermore, the temperature dependence of C{sub J} has shown that GaAs 311B limits the formation of N-H defects. In the other hand, the energy states in the forbidden gap of GaAsN were obtained. Six electron traps, E1 to E6, were observed in the DLTS spectrum of GaAsN grown on GaAs 311B, with apparent activation energies of 0.02, 0.14, 0.16, 0.33, 0.48, and 0.74 eV below the bottom edge of the conduction band, respectively. In addition, four hole traps, H1 to H4, were observed in the DLTS spectrum of GaAsN grown on GaAs 10A, with energy depths of 0.13, 0.20, 0.39, and 0.52 eV above the valence band maximum of the alloy, respectively. Hence, the surface morphology of the GaAs substrate was found to play a key factor role in clarifying the electrical properties of GaAsN grown by CBE.

  20. Wind Powering America FY07 Activities Summary

    SciTech Connect (OSTI)

    Not Available

    2008-02-01

    The Wind Powering America FY07 Activities Summary reflects the accomplishments of our state wind working groups, our programs at the National Renewable Energy Laboratory, and our partner organizations. The national WPA team remains a leading force for moving wind energy forward in the United States. WPA continues to work with its national, regional, and state partners to communicate the opportunities and benefits of wind energy to a diverse set of stakeholders. WPA now has 30 state wind working groups (welcoming Georgia and Wisconsin in 2007) that form strategic alliances to communicate wind's benefits to the state stakeholders. More than 140 members of national and state public and private sector organizations from 39 U.S. states and Canada attended the 6th Annual WPA All-States Summit in Los Angeles in June. WPA's emphasis remains on the rural agricultural sector, which stands to reap the significant economic development benefits of wind energy development. Additionally, WPA continues its program of outreach, education, and technical assistance to Native American communities, public power entities, and regulatory and legislative bodies.

  1. Refractive index of erbium doped GaN thin films

    SciTech Connect (OSTI)

    Alajlouni, S.; Sun, Z. Y.; Li, J.; Lin, J. Y.; Jiang, H. X.; Zavada, J. M.

    2014-08-25

    GaN is an excellent host for erbium (Er) to provide optical emission in the technologically important as well as eye-safe 1540 nm wavelength window. Er doped GaN (GaN:Er) epilayers were synthesized on c-plane sapphire substrates using metal organic chemical vapor deposition. By employing a pulsed growth scheme, the crystalline quality of GaN:Er epilayers was significantly improved over those obtained by conventional growth method of continuous flow of reaction precursors. X-ray diffraction rocking curve linewidths of less than 300 arc sec were achieved for the GaN (0002) diffraction peak, which is comparable to the typical results of undoped high quality GaN epilayers and represents a major improvement over previously reported results for GaN:Er. Spectroscopic ellipsometry was used to determine the refractive index of the GaN:Er epilayers in the 1540 nm wavelength window and a linear dependence on Er concentration was found. The observed refractive index increase with Er incorporation and the improved crystalline quality of the GaN:Er epilayers indicate that low loss GaN:Er optical waveguiding structures are feasible.

  2. Wind Power

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Wind Power As the accompanying map of New Mexico shows, the best wind power generation potential near WIPP is along the Delaware Mountain ridge line of the southern Guadalupe Mountains, about 50-60 miles southwest. The numeric grid values indicate wind potential, with a range from 1 (poor) to 7 (superb). Just inside Texas in the southern Guadalupe Mountains, the Delaware Mountain Wind Power Facility in Culbertson County, Texas currently generates over 30 MW, and could be expanded to a 250 MW

  3. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. ); Koploy, M.A. )

    1992-01-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  4. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J.; Koploy, M.A.

    1992-08-01

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  5. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  6. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

    SciTech Connect (OSTI)

    Guo, Wei Bryan, Zachary; Kirste, Ronny; Bryan, Isaac; Hussey, Lindsay; Bobea, Milena; Haidet, Brian; Collazo, Ramn; Sitar, Zlatko; Xie, Jinqiao; Mita, Seiji; Gerhold, Michael

    2014-03-14

    Optical gain spectra for ?250?nm stimulated emission were compared in three different AlGaN-based structures grown on single crystalline AlN substrates: a single AlGaN film, a double heterostructure (DH), and a Multiple Quantum Well (MQW) structure; respective threshold pumping power densities of 700, 250, and 150?kW/cm{sup 2} were observed. Above threshold, the emission was transverse-electric polarized and as narrow as 1.8?nm without a cavity. The DH and MQW structures showed gain values of 5060?cm{sup ?1} when pumped at 1?MW/cm{sup 2}. The results demonstrated the excellent optical quality of the AlGaN-based heterostructures grown on AlN substrates and their potential for realizing electrically pumped sub-280?nm laser diodes.

  7. Enhanced Thermoelectric Properties of Cu2ZnSnSe4 with Ga-doping

    SciTech Connect (OSTI)

    Wei, Kaya; Beauchemin, Laura; Wang, Hsin; Porter, Wallace D.; Martin, Joshua; Nolas, George S.

    2015-08-10

    Gallium doped Cu2ZnSnSe4 quaternary chalcogenides with and without excess Cu were synthesized by elemental reaction and densified using hot pressing in order to investigate their high temperature thermoelectric properties. The resistivity, , and Seebeck coefficient, S, for these materials decrease with increased Ga-doping while both mobility and effective mass increase with Ga doping. The power factor (S2/ρ) therefore increases with Ga-doping. The highest thermoelectric figure of merit (ZT = 0.39 at 700 K) was obtained for the composition that had the lowest thermal conductivity. Our results suggest an approach to achieving optimized thermoelectric properties and are part of the continuing effort to explore different quaternary chalcogenide compositions and structure types, as this class of materials continues to be of interest for thermoelectrics applications.

  8. Intermediate band solar cell simulation use InAs quantum dot in GaAs

    SciTech Connect (OSTI)

    Hendra P, I. B. Rahayu, F.; Sahdan, M. F.; Darma, Y.

    2015-04-16

    Intermediate band solar cell (IBSC) has become a new approach in increasing solar cell efficiency significantly. One way to create intermediate band is by proposing quantum dots (QD) technology. One of the important aspects in utilizing IBSC is the absorption of light. In this work we simulated the influence of QD arrangement in order to increase absorption coefficient and solar cell efficiency. We also simulated the influence of QD size to capture a wider light spectrum. We present a simple calculation method with low computing power demand. Results show that the increasing in quantum dot size can increase in capturing wider spectrum of light. Arrangement InAs QD in bulk material GaAs can capture wider spectrum of light and increase the absorption coefficient. The arrangement InAs QD 2 nm in GaAs bulk can increase solar cell efficiency up to 49.68%.

  9. Water Power

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 ... Geochemistry Geoscience SubTER Carbon Sequestration Program Leadership EnergyWater Nexus ...

  10. Power LCAT

    SciTech Connect (OSTI)

    Drennen, Thomas

    2012-08-15

    POWER LCAT is a software tool used to compare elements of efficiency, cost, and environmental effects between different sources of energy.

  11. Power LCAT

    ScienceCinema (OSTI)

    Drennen, Thomas

    2014-06-27

    POWER LCAT is a software tool used to compare elements of efficiency, cost, and environmental effects between different sources of energy.

  12. Optimization of doubly Q-switched lasers with both an acousto-optic modulator and a GaAs saturable absorber

    SciTech Connect (OSTI)

    Li Dechun; Zhao Shengzhi; Li Guiqiu; Yang Kejian

    2007-08-20

    A doubly Q-switched laser with both an acousto-optic (AO) modulator and a GaAs saturable absorber can obtain a more symmetric and shorter pulse with high pulse peak power, which has been experimentally proved. The key parameters of an optimally coupled doubly Q-switched laser with both an AO modulator and a GaAs saturable absorber are determined, and a group of general curves are generated for what we believe is the first time, when the single-photon absorption (SPA) and two-photon absorption (TPA) processes of GaAs are combined, and the Gaussian spatial distributions of the intracavity photon density and the initial population-inversion density as well as the influence of the AO Q-switch are considered. These key parameters include the optimal normalized coupling parameter, the optimal normalized GaAs saturable absorber parameters, and the normalized parameters of the AO Q-switch, which can maximize the output energy. Meanwhile, the corresponding normalized energy, the normalized peak power, and the normalized pulse width are given. The curves clearly show the dependence of the optimal key parameters on the parameters of the gain medium, the GaAs saturable absorber,the AO Q-switch, and the resonator. Sample calculations for a diode-pumpedNd3+:YVO4 laser with both an AO modulator and a GaAs saturable absorber are presented to demonstrate the use of the curves and the relevant formulas.

  13. Distributed bragg reflector using AIGaN/GaN

    DOE Patents [OSTI]

    Waldrip, Karen E.; Lee, Stephen R.; Han, Jung

    2004-08-10

    A supported distributed Bragg reflector or superlattice structure formed from a substrate, a nucleation layer deposited on the substrate, and an interlayer deposited on the nucleation layer, followed by deposition of (Al,Ga,B)N layers or multiple pairs of (Al,Ga,B)N/(Al,Ga,B)N layers, where the interlayer is a material selected from AlN, Al.sub.x Ga.sub.1-x N, and AlBN with a thickness of approximately 20 to 1000 angstroms. The interlayer functions to reduce or eliminate the initial tensile growth stress, thereby reducing cracking in the structure. Multiple interlayers utilized in an AlGaN/GaN DBR structure can eliminate cracking and produce a structure with a reflectivity value greater than 0.99.

  14. Power system

    DOE Patents [OSTI]

    Hickam, Christopher Dale

    2008-03-18

    A power system includes a prime mover, a transmission, and a fluid coupler having a selectively engageable lockup clutch. The fluid coupler may be drivingly connected between the prime mover and the transmission. Additionally, the power system may include a motor/generator drivingly connected to at least one of the prime mover and the transmission. The power-system may also include power-system controls configured to execute a control method. The control method may include selecting one of a plurality of modes of operation of the power system. Additionally, the control method may include controlling the operating state of the lockup clutch dependent upon the mode of operation selected. The control method may also include controlling the operating state of the motor/generator dependent upon the mode of operation selected.

  15. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  16. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  17. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    SciTech Connect (OSTI)

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  18. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  19. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  20. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  1. Simulation of quantum dots size and spacing effect for intermediate band solar cell application based on InAs quantum dots arrangement in GaAs

    SciTech Connect (OSTI)

    Hendra, P. I. B. Rahayu, F. Darma, Y.

    2014-03-24

    Intermediate band solar cell (IBSC) has become a promising technology in increasing solar cell efficiency. In this work we compare absorption coefficient profile between InAs quantum dots with GaAs bulk. We calculate the efficiency of GaAs bulk and GaAs doped with 2, 5, and 10 nm InAs quantum dot. Effective distances in quantum dot arrangement based on electron tunneling consideration were also calculated. We presented a simple calculation method with low computing power demand. Results showed that arrangement of quantum dot InAs in GaAs can increase solar cell efficiency from 23.9 % initially up to 60.4%. The effective distance between two quantum dots was found 2 nm in order to give adequate distance to prevent electron tunneling and wave functions overlap.

  2. Photoluminescence from GaAs nanodisks fabricated by using combination...

    Office of Scientific and Technical Information (OSTI)

    GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth Citation Details In-Document Search Title:...

  3. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19 }m{sup −2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  4. Atomic structure of defects in GaN:Mg grown with Ga polarity

    SciTech Connect (OSTI)

    Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; Jasinski, J.; O'Keefe, M.A.; Hautakangas, S.; Laakso, A.; Saarinen, K.

    2003-11-25

    Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {l_brace}11{und 2}3{r_brace} planes seen in cross-section as triangulars. Some other defects appear in cross-section as trapezoidal (rectangular) defects as a result of presence of truncated pyramids. Both type of defects have hollow centers. They are decorated by Mg on all six side walls and a base. The GaN which grows inside on the defect walls shows polarity inversion. It is shown that change of polarity starts from the defect tip and propagates to the base, and that the stacking sequence changes from ab in the matrix to bc inside the defect. Exchange of the Ga sublattice with the N sublattice within the defect leads to 0.6 {+-} 0.2{angstrom} displacement between Ga sublattices outside and inside the defects. It is proposed that lateral overgrowth of the cavities formed within the defect takes place to restore matrix polarity on the defect base.

  5. An analysis framework for characterizing and explaining development of EIA legislation in developing countries-Illustrated for Georgia, Ghana and Yemen

    SciTech Connect (OSTI)

    Kolhoff, Arend J.; Driessen, Peter P.J.; Runhaar, Hens A.C.

    2013-01-15

    Actors in the field of international development co-operation supporting the development of EIA legislation in developing countries often do not achieve the results envisaged. The performance of EIA in these countries often remains weak. One reason, we assume, is that often those actors support the establishment of overly ambitious EIA legislation that cannot achieve its objectives in the light of constraining contexts. To provide more effective support we need to better understand the enabling and constraining contextual factors that influence the development of EIA legislation and to which support actors should align itself. In this article a new analysis framework for classifying, characterizing and explaining the development of EIA legislation is described, measured in terms of ambition levels. Ambitions are defined as intentions the EIA authorities aim to fulfill, expressed in formal EIA legislation. Three country cases, Yemen, Georgia and Ghana are used to illustrate the usefulness of our framework and as a first test to refine the framework. We have formulated the following five hypotheses that complement and refine our analysis framework. One, EIA legislation may develop multilinearly in terms of ambition levels. Two, ambitions in EIA legislation seem to be influenced to a great extent by the power and capacity of, on the one hand, the environmental authorities supporting EIA and, on the other hand, the sector authorities hindering the development of EIA. Three, the political system is the most important context factor influencing the rules of policy-making and the power of the different actors involved. Four, the importance of context factors on the development of ambitions is dependent on the phase of EIA system development. Five, some ambitions seem to be influenced by particular factors; for instance the ambitions for the object of study seem to be influenced by the level of environmental awareness of the sector ministries and parliament. The analysis

  6. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  7. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  8. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  9. Self-catalyzed growth of dilute nitride GaAs/GaAsSbN/GaAs core-shell nanowires by molecular beam epitaxy

    SciTech Connect (OSTI)

    Kasanaboina, Pavan Kumar; Ahmad, Estiak; Li, Jia; Iyer, Shanthi; Reynolds, C. Lewis; Liu, Yang

    2015-09-07

    Bandgap tuning up to 1.3 μm in GaAsSb based nanowires by incorporation of dilute amount of N is reported. Highly vertical GaAs/GaAsSbN/GaAs core-shell configured nanowires were grown for different N contents on Si (111) substrates using plasma assisted molecular beam epitaxy. X-ray diffraction analysis revealed close lattice matching of GaAsSbN with GaAs. Micro-photoluminescence (μ-PL) revealed red shift as well as broadening of the spectra attesting to N incorporation in the nanowires. Replication of the 4K PL spectra for several different single nanowires compared to the corresponding nanowire array suggests good compositional homogeneity amongst the nanowires. A large red shift of the Raman spectrum and associated symmetric line shape in these nanowires have been attributed to phonon localization at point defects. Transmission electron microscopy reveals the dominance of stacking faults and twins in these nanowires. The lower strain present in these dilute nitride nanowires, as opposed to GaAsSb nanowires having the same PL emission wavelength, and the observation of room temperature PL demonstrate the advantage of the dilute nitride system offers in the nanowire configuration, providing a pathway for realizing nanoscale optoelectronic devices in the telecommunication wavelength region.

  10. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  11. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  12. Health assessment for Cedartown Industries, Cedartown, Polk County, Georgia, Region 4. CERCLIS No. GAD95840674. Preliminary report

    SciTech Connect (OSTI)

    Not Available

    1990-01-29

    The Cedartown Industries, Inc. site has been proposed for the National Priorities List (NPL) by the U.S. Environmental Protection Agency (EPA). The 7-acre site is located in Cedartown, Polk County, Georgia, in the northwest part of the State. In 1986, one sediment sample from an on-site impoundment and two soil samples (one background) were collected on-site and analyzed by EPD. Only Extraction Procedure (EP) Toxicity testing was performed on these samples. The test which measures the concentration of leachate generated from the soil showed leachate with lead concentrations up to 720 parts per million (ppm) and cadmium concentrations up to 1.4 ppm. Based on the information reviewed, ATSDR has concluded that the site is of potential public health concern because humans may be exposed to hazardous substances at concentrations that may result in adverse health effects. As noted in the Human Exposure Pathways Section above, human exposure to lead may occur via ingestion of, inhalation of, and dermal contact with surface water, sediments, soils, ground water, air, and food-chain entities.

  13. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N. E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M. E-mail: Martin.Kuball@bristol.ac.uk; Paskova, T.; Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 ; Evans, K. R.; Leach, J.; Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 ; Li, X.; Özgür, Ü.; Morkoç, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  14. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

    SciTech Connect (OSTI)

    Tsatsulnikov, A. F. Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Kryzhanovskaya, N. V.; Synitsin, M. A.; Sizov, V. S.; Zakgeim, A. L.; Mizerov, M. N.

    2010-06-15

    A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue and yellow-green spectral ranges. The optical properties of structures of this kind have been studied, and it is demonstrated that the use of such a superlattice makes it possible to obtain effective emission from the active region.

  15. solar power

    National Nuclear Security Administration (NNSA)

    9%2A en Solar power purchase for DOE laboratories http:nnsa.energy.govmediaroompressreleasessolarpower

  16. Water Power

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ...016-03-01T17:12:00+00:00 March 1st, 2016|News, News & Events, Water Power, Workshops|0 Comments Read More Wave energy distribution example Permalink Gallery Sandia releases 2nd ...

  17. Power combiner

    DOE Patents [OSTI]

    Arnold, Mobius; Ives, Robert Lawrence

    2006-09-05

    A power combiner for the combining of symmetric and asymmetric traveling wave energy comprises a feed waveguide having an input port and a launching port, a reflector for reflecting launched wave energy, and a final waveguide for the collection and transport of launched wave energy. The power combiner has a launching port for symmetrical waves which comprises a cylindrical section coaxial to the feed waveguide, and a launching port for asymmetric waves which comprises a sawtooth rotated about a central axis.

  18. Vacancy dynamic in Ni-Mn-Ga ferromagnetic shape memory alloys

    SciTech Connect (OSTI)

    Merida, D.; Snchez-Alarcos, V.; Prez-Landazbal, J. I.; Recarte, V.; Plazaola, F.

    2014-06-09

    Vacancies control any atomic ordering process and consequently most of the order-dependent properties of the martensitic transformation in ferromagnetic shape memory alloys. Positron annihilation spectroscopy demonstrates to be a powerful technique to study vacancies in NiMnGa alloys quenched from different temperatures and subjected to post-quench isothermal annealing treatments. Considering an effective vacancy type the temperature dependence of the vacancy concentration has been evaluated. Samples quenched from 1173?K show a vacancy concentration of 1100??200?ppm. The vacancy migration and formation energies have been estimated to be 0.55??0.05?eV and 0.90??0.07?eV, respectively.

  19. Replacement-3 Wholesale Power Rate Schedule | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    is hereinafter called the Customer) in Virginia, North Carolina, Tennessee, Georgia, ... from the Dale Hollow, Center Hill, Wolf Creek, Cheatham, Old Hickory, Barkley, J. ...

  20. Theoretical and experimental study of dynamics of photoexcited carriers in GaN

    SciTech Connect (OSTI)

    Shishehchi, Sara; Bellotti, Enrico; Rudin, Sergey; Garrett, Gregory A.; Wraback, Michael

    2013-12-21

    We present a theoretical and experimental study of the sub-picosecond dynamics of photo-excited carriers in GaN. In the theoretical model, interaction with an external ultrafast laser pulse is treated coherently and to account for the scattering mechanisms and dephasing processes, a generalized Monte-Carlo simulation is used. The scattering mechanisms included are carrier interactions with polar optical phonons and acoustic phonons, and carrier-carrier Coulomb interactions. We study the effect of different scattering mechanisms on the carrier densities. In the case that the excitation energy satisfies the threshold for polar optical scattering, phonon contribution is the dominant process in relaxing the system, otherwise, carrier-carrier mechanism is dominant. Furthermore, we present the temperature and pulse power dependent normalized luminescence intensity. The results are presented over a range of temperatures, electric field, and excitation energy of the laser pulse. For comparison, we also report the experimental time-resolved photoluminescence studies on GaN samples. There is a good agreement between the simulation and experiment in normalized luminescence intensity results. Therefore, we show that we can explain the dynamics of the photo-excited carriers in GaN by including only carrier-carrier and carrier-phonon interactions and a relatively simple two-band electronic structure model.